Продукція > GENESIC SEMICONDUCTOR > Всі товари виробника GENESIC SEMICONDUCTOR (5688) > Сторінка 35 з 95
| Фото | Назва | Виробник | Інформація |
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MSRT100100AD | GeneSiC Semiconductor |
Description: DIODE MOD GP 1000V 100A 3TOWERPackaging: Bulk Package / Case: Three Tower Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 100A Supplier Device Package: Three Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 A Current - Reverse Leakage @ Vr: 10 µA @ 1000 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MSRT100120AD | GeneSiC Semiconductor |
Description: DIODE MOD GP 1200V 100A 3TOWERPackaging: Bulk Package / Case: Three Tower Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 100A Supplier Device Package: Three Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 A Current - Reverse Leakage @ Vr: 10 µA @ 1200 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MSRT100140AD | GeneSiC Semiconductor |
Description: DIODE MOD GP 1400V 100A 3TOWERPackaging: Bulk Package / Case: Three Tower Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 100A Supplier Device Package: Three Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1400 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 A Current - Reverse Leakage @ Vr: 10 µA @ 1400 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MSRT100160AD | GeneSiC Semiconductor |
Description: DIODE MOD GP 1600V 100A 3TOWERPackaging: Bulk Package / Case: Three Tower Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 100A Supplier Device Package: Three Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1600 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 A Current - Reverse Leakage @ Vr: 10 µA @ 1600 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MSRT10080AD | GeneSiC Semiconductor |
Description: DIODE MODULE GP 800V 100A 3TOWERPackaging: Bulk Package / Case: Three Tower Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 100A Supplier Device Package: Three Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 A Current - Reverse Leakage @ Vr: 10 µA @ 800 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MSRT100100D | GeneSiC Semiconductor |
Description: DIODE MOD GP 1000V 100A 3TOWERPackaging: Bulk Package / Case: Three Tower Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 100A Supplier Device Package: Three Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 A Current - Reverse Leakage @ Vr: 10 µA @ 1000 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MSRT100120D | GeneSiC Semiconductor |
Description: DIODE MOD GP 1200V 100A 3TOWERPackaging: Bulk Package / Case: Three Tower Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 100A Supplier Device Package: Three Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 A Current - Reverse Leakage @ Vr: 10 µA @ 1200 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MSRT100160D | GeneSiC Semiconductor |
Description: DIODE MOD GP 1600V 100A 3TOWERPackaging: Bulk Package / Case: Three Tower Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 100A Supplier Device Package: Three Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1600 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 A Current - Reverse Leakage @ Vr: 10 µA @ 1600 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MSRT10080D | GeneSiC Semiconductor |
Description: DIODE MODULE GP 800V 100A 3TOWERPackaging: Bulk Package / Case: Three Tower Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 100A Supplier Device Package: Three Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 A Current - Reverse Leakage @ Vr: 10 µA @ 800 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MSRT100140D | GeneSiC Semiconductor |
Description: DIODE MOD GP 1400V 100A 3TOWERPackaging: Bulk Package / Case: Three Tower Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 100A Supplier Device Package: Three Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1400 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 A Current - Reverse Leakage @ Vr: 10 µA @ 1400 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MSRT10060D | GeneSiC Semiconductor |
Description: DIODE MODULE GP 600V 100A 3TOWERPackaging: Bulk Package / Case: Three Tower Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 100A Supplier Device Package: Three Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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KBP210G | GeneSiC Semiconductor |
Description: BRIDGE RECT 1PHASE 1KV 2A KBPPackaging: Bulk Package / Case: 4-SIP, KBP Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: KBP Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 2 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A Current - Reverse Leakage @ Vr: 10 µA @ 1000 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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GBPC3504W | GeneSiC Semiconductor |
Description: BRIDGE RECT 1P 400V 35A GBPC-WPackaging: Bulk Package / Case: 4-Square, GBPC-W Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBPC-W Voltage - Peak Reverse (Max): 400 V Current - Average Rectified (Io): 35 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V |
на замовлення 1750 шт: термін постачання 21-31 дні (днів) |
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| 1N2128AR | GeneSiC Semiconductor |
Description: DIODE STANDARD REV 50V 60A DO5Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Chassis, Stud Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard, Reverse Polarity Current - Average Rectified (Io): 60A Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 200°C Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 60 A Current - Reverse Leakage @ Vr: 10 µA @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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GE06MPS06E-TR | GeneSiC Semiconductor |
Description: 650V 6A TO-252-2 SIC SCHOTTKY MPPackaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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GE06MPS06E-TR | GeneSiC Semiconductor |
Description: 650V 6A TO-252-2 SIC SCHOTTKY MPPackaging: Cut Tape (CT) |
на замовлення 2490 шт: термін постачання 21-31 дні (днів) |
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KBP208G | GeneSiC Semiconductor |
Description: BRIDGE RECT 1PHASE 800V 2A KBPPackaging: Bulk Package / Case: 4-SIP, KBP Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: KBP Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 2 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A Current - Reverse Leakage @ Vr: 10 µA @ 50 V |
на замовлення 471 шт: термін постачання 21-31 дні (днів) |
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KBP202G | GeneSiC Semiconductor |
Description: BRIDGE RECT 1PHASE 100V 2A KBPPackaging: Bulk Package / Case: 4-SIP, KBP Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: KBP Voltage - Peak Reverse (Max): 100 V Current - Average Rectified (Io): 2 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A Current - Reverse Leakage @ Vr: 10 µA @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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GD05MPS17J-TR | GeneSiC Semiconductor |
Description: DIODE SIL CARB 1700V 15A TO2637Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 361pF @ 1V, 1MHz Current - Average Rectified (Io): 15A Supplier Device Package: TO-263-7 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1700 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A Current - Reverse Leakage @ Vr: 20 µA @ 1700 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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GD05MPS17J-TR | GeneSiC Semiconductor |
Description: DIODE SIL CARB 1700V 15A TO2637Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 361pF @ 1V, 1MHz Current - Average Rectified (Io): 15A Supplier Device Package: TO-263-7 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1700 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A Current - Reverse Leakage @ Vr: 20 µA @ 1700 V |
на замовлення 137 шт: термін постачання 21-31 дні (днів) |
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1N1199A | GeneSiC Semiconductor |
Description: DIODE STANDARD 50V 12A DO4Packaging: Bulk Package / Case: DO-203AA, DO-4, Stud Mounting Type: Chassis, Stud Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 12A Supplier Device Package: DO-4 Operating Temperature - Junction: -65°C ~ 200°C Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12 A Current - Reverse Leakage @ Vr: 10 µA @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| GBU6K | GeneSiC Semiconductor |
Description: BRIDGE RECT 1PHASE 800V 6A GBUPackaging: Bulk Package / Case: 4-SIP, GBU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBU Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 6 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| GBU6M | GeneSiC Semiconductor |
Description: BRIDGE RECT 1PHASE 1KV 6A GBUPackaging: Bulk Package / Case: 4-SIP, GBU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBU Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 6 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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GBPC2501W | GeneSiC Semiconductor |
Description: BRIDGE RECT 1P 50V 25A GBPC-WPackaging: Bulk Package / Case: 4-Square, GBPC-W Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBPC-W Voltage - Peak Reverse (Max): 50 V Current - Average Rectified (Io): 25 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A Current - Reverse Leakage @ Vr: 5 µA @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| 1N3893 | GeneSiC Semiconductor |
Description: DIODE STANDARD 600V 12A DO4Packaging: Bulk Package / Case: DO-203AA, DO-4, Stud Mounting Type: Chassis, Stud Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200 ns Technology: Standard Current - Average Rectified (Io): 12A Supplier Device Package: DO-4 Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 12 A Current - Reverse Leakage @ Vr: 25 µA @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| GBU4K | GeneSiC Semiconductor |
Description: BRIDGE RECT 1PHASE 800V 4A GBUPackaging: Bulk Package / Case: 4-SIP, GBU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBU Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 4 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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GD05MPS17J | GeneSiC Semiconductor |
Description: DIODE SIL CARB 1.7KV 18A TO263-7Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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KBP206G | GeneSiC Semiconductor |
Description: BRIDGE RECT 1PHASE 600V 2A KBPPackaging: Bulk Package / Case: 4-SIP, KBP Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: KBP Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 2 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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GBPC3510W | GeneSiC Semiconductor |
Description: BRIDGE RECT 1P 1KV 35A GBPC-WPackaging: Bulk Package / Case: 4-Square, GBPC-W Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBPC-W Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 35 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| GBU4M | GeneSiC Semiconductor |
Description: BRIDGE RECT 1PHASE 1KV 4A GBUPackaging: Bulk Package / Case: 4-SIP, GBU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBU Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 4 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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KBU8G | GeneSiC Semiconductor |
Bridge Rectifiers 400V 8A Bridge Rectifier |
на замовлення 2408 шт: термін постачання 21-30 дні (днів) |
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GBU8D | GeneSiC Semiconductor |
Bridge Rectifiers 200V 8A Bridge Rectifier |
на замовлення 5323 шт: термін постачання 21-30 дні (днів) |
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GBPC2502W | GeneSiC Semiconductor |
Bridge Rectifiers 200 V - 25 A |
на замовлення 2058 шт: термін постачання 21-30 дні (днів) |
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KBPC2504T | GeneSiC Semiconductor |
Bridge Rectifiers 400 V - 25 A |
на замовлення 202 шт: термін постачання 21-30 дні (днів) |
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KBPC3508W | GeneSiC Semiconductor |
Bridge Rectifiers 800 V - 35 A |
на замовлення 57 шт: термін постачання 21-30 дні (днів) |
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GBU15G | GeneSiC Semiconductor |
Bridge Rectifiers 400V 15A Bridge Rectifier |
на замовлення 354 шт: термін постачання 21-30 дні (днів) |
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KBJ2510G | GeneSiC Semiconductor |
Bridge Rectifiers 1000V 25A Bridge Rectifier |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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KBPC15005W | GeneSiC Semiconductor |
Bridge Rectifiers 50 V - 15 A |
на замовлення 499 шт: термін постачання 21-30 дні (днів) |
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KBPC1502W | GeneSiC Semiconductor |
Bridge Rectifiers 200 V - 15 A |
на замовлення 809 шт: термін постачання 21-30 дні (днів) |
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KBPC2501W | GeneSiC Semiconductor |
Bridge Rectifiers 100 V - 25 A |
на замовлення 691 шт: термін постачання 21-30 дні (днів) |
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KBPC35005W | GeneSiC Semiconductor |
Bridge Rectifiers 50 V - 35 A |
на замовлення 940 шт: термін постачання 21-30 дні (днів) |
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KBPC3501T | GeneSiC Semiconductor |
Bridge Rectifiers 100 V - 35 A |
на замовлення 462 шт: термін постачання 21-30 дні (днів) |
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KBPC1501W | GeneSiC Semiconductor |
Bridge Rectifiers 100 V - 15 A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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KBJ2504G | GeneSiC Semiconductor |
Bridge Rectifiers 400V 25A Bridge Rectifier |
на замовлення 570 шт: термін постачання 21-30 дні (днів) |
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| W02M | GeneSiC Semiconductor |
Bridge Rectifiers 200V 1.5A Bridge Rectifier |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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GBU8J | GeneSiC Semiconductor |
Bridge Rectifiers 600V 8A Bridge Rectifier |
на замовлення 2412 шт: термін постачання 21-30 дні (днів) |
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KBU1004 | GeneSiC Semiconductor |
Bridge Rectifiers 400V 10A Bridge Rectifier |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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GBPC3508W | GeneSiC Semiconductor |
Bridge Rectifiers 800 V - 35 A |
на замовлення 418 шт: термін постачання 21-30 дні (днів) |
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GBPC3510W | GeneSiC Semiconductor |
Bridge Rectifiers 1000V 35A Si Bridge Rectifier |
на замовлення 341 шт: термін постачання 21-30 дні (днів) |
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KBPC5006T | GeneSiC Semiconductor |
Bridge Rectifiers 600 V - 50 A |
на замовлення 11 шт: термін постачання 21-30 дні (днів) |
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KBPC3502W | GeneSiC Semiconductor |
Bridge Rectifiers 200 V - 35 A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BR305 | GeneSiC Semiconductor |
Bridge Rectifiers SI BRIDGE RECT BR-10 50-1000V 3A 50P/35R |
на замовлення 6794 шт: термін постачання 21-30 дні (днів) |
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BR68 | GeneSiC Semiconductor |
Bridge Rectifiers SI BRIDGE RECT BR-10 50-1KV 6A 800P/560R |
на замовлення 2004 шт: термін постачання 21-30 дні (днів) |
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KBPC3506W | GeneSiC Semiconductor |
Bridge Rectifiers 600 V - 35 A |
на замовлення 3 шт: термін постачання 21-30 дні (днів) |
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KBPC2506T | GeneSiC Semiconductor |
Bridge Rectifiers 600 V - 25 A |
на замовлення 200 шт: термін постачання 21-30 дні (днів) |
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KBPC2502W | GeneSiC Semiconductor |
Bridge Rectifiers 200 V - 25 A |
на замовлення 240 шт: термін постачання 21-30 дні (днів) |
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KBL404G | GeneSiC Semiconductor |
Bridge Rectifiers 400V 4A Bridge Rectifier |
на замовлення 1080 шт: термін постачання 21-30 дні (днів) |
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GBL005 | GeneSiC Semiconductor |
Bridge Rectifiers 50V 4A Bridge Rectifier |
на замовлення 3434 шт: термін постачання 21-30 дні (днів) |
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KBPC2506W | GeneSiC Semiconductor |
Bridge Rectifiers 600 V - 25 A |
на замовлення 1484 шт: термін постачання 21-30 дні (днів) |
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KBPC3502T | GeneSiC Semiconductor |
Bridge Rectifiers 200 V - 35 A |
на замовлення 615 шт: термін постачання 21-30 дні (днів) |
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| MSRT100100AD |
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Виробник: GeneSiC Semiconductor
Description: DIODE MOD GP 1000V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Description: DIODE MOD GP 1000V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
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| MSRT100120AD |
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Виробник: GeneSiC Semiconductor
Description: DIODE MOD GP 1200V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
Description: DIODE MOD GP 1200V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
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В кошику
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| MSRT100140AD |
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Виробник: GeneSiC Semiconductor
Description: DIODE MOD GP 1400V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 A
Current - Reverse Leakage @ Vr: 10 µA @ 1400 V
Description: DIODE MOD GP 1400V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 A
Current - Reverse Leakage @ Vr: 10 µA @ 1400 V
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| MSRT100160AD |
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Виробник: GeneSiC Semiconductor
Description: DIODE MOD GP 1600V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 A
Current - Reverse Leakage @ Vr: 10 µA @ 1600 V
Description: DIODE MOD GP 1600V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 A
Current - Reverse Leakage @ Vr: 10 µA @ 1600 V
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В кошику
од. на суму грн.
| MSRT10080AD |
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Виробник: GeneSiC Semiconductor
Description: DIODE MODULE GP 800V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Description: DIODE MODULE GP 800V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
товару немає в наявності
В кошику
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| MSRT100100D |
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Виробник: GeneSiC Semiconductor
Description: DIODE MOD GP 1000V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Description: DIODE MOD GP 1000V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
товару немає в наявності
В кошику
од. на суму грн.
| MSRT100120D |
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Виробник: GeneSiC Semiconductor
Description: DIODE MOD GP 1200V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
Description: DIODE MOD GP 1200V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
товару немає в наявності
В кошику
од. на суму грн.
| MSRT100160D |
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Виробник: GeneSiC Semiconductor
Description: DIODE MOD GP 1600V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 A
Current - Reverse Leakage @ Vr: 10 µA @ 1600 V
Description: DIODE MOD GP 1600V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 A
Current - Reverse Leakage @ Vr: 10 µA @ 1600 V
товару немає в наявності
В кошику
од. на суму грн.
| MSRT10080D |
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Виробник: GeneSiC Semiconductor
Description: DIODE MODULE GP 800V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Description: DIODE MODULE GP 800V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
товару немає в наявності
В кошику
од. на суму грн.
| MSRT100140D |
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Виробник: GeneSiC Semiconductor
Description: DIODE MOD GP 1400V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 A
Current - Reverse Leakage @ Vr: 10 µA @ 1400 V
Description: DIODE MOD GP 1400V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 A
Current - Reverse Leakage @ Vr: 10 µA @ 1400 V
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| MSRT10060D |
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Виробник: GeneSiC Semiconductor
Description: DIODE MODULE GP 600V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: DIODE MODULE GP 600V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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| KBP210G |
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Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 1KV 2A KBP
Packaging: Bulk
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Description: BRIDGE RECT 1PHASE 1KV 2A KBP
Packaging: Bulk
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
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| GBPC3504W |
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Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1P 400V 35A GBPC-W
Packaging: Bulk
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Description: BRIDGE RECT 1P 400V 35A GBPC-W
Packaging: Bulk
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
на замовлення 1750 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 327.13 грн |
| 10+ | 252.89 грн |
| 25+ | 231.74 грн |
| 100+ | 190.58 грн |
| 250+ | 174.63 грн |
| 500+ | 163.49 грн |
| 1000+ | 150.48 грн |
| 1N2128AR |
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Виробник: GeneSiC Semiconductor
Description: DIODE STANDARD REV 50V 60A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 60A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 60 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Description: DIODE STANDARD REV 50V 60A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 60A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 60 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
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од. на суму грн.
| GE06MPS06E-TR |
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Виробник: GeneSiC Semiconductor
Description: 650V 6A TO-252-2 SIC SCHOTTKY MP
Packaging: Tape & Reel (TR)
Description: 650V 6A TO-252-2 SIC SCHOTTKY MP
Packaging: Tape & Reel (TR)
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| GE06MPS06E-TR |
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Виробник: GeneSiC Semiconductor
Description: 650V 6A TO-252-2 SIC SCHOTTKY MP
Packaging: Cut Tape (CT)
Description: 650V 6A TO-252-2 SIC SCHOTTKY MP
Packaging: Cut Tape (CT)
на замовлення 2490 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 295.74 грн |
| 10+ | 182.73 грн |
| 25+ | 156.04 грн |
| 100+ | 118.14 грн |
| 250+ | 104.24 грн |
| 500+ | 95.69 грн |
| 1000+ | 87.08 грн |
| KBP208G |
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Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 800V 2A KBP
Packaging: Bulk
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Description: BRIDGE RECT 1PHASE 800V 2A KBP
Packaging: Bulk
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
на замовлення 471 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 88.39 грн |
| 10+ | 52.66 грн |
| 25+ | 43.37 грн |
| 100+ | 30.40 грн |
| 250+ | 25.09 грн |
| KBP202G |
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Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 100V 2A KBP
Packaging: Bulk
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Description: BRIDGE RECT 1PHASE 100V 2A KBP
Packaging: Bulk
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
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| GD05MPS17J-TR |
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Виробник: GeneSiC Semiconductor
Description: DIODE SIL CARB 1700V 15A TO2637
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 361pF @ 1V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-263-7
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A
Current - Reverse Leakage @ Vr: 20 µA @ 1700 V
Description: DIODE SIL CARB 1700V 15A TO2637
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 361pF @ 1V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-263-7
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A
Current - Reverse Leakage @ Vr: 20 µA @ 1700 V
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| GD05MPS17J-TR |
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Виробник: GeneSiC Semiconductor
Description: DIODE SIL CARB 1700V 15A TO2637
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 361pF @ 1V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-263-7
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A
Current - Reverse Leakage @ Vr: 20 µA @ 1700 V
Description: DIODE SIL CARB 1700V 15A TO2637
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 361pF @ 1V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-263-7
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A
Current - Reverse Leakage @ Vr: 20 µA @ 1700 V
на замовлення 137 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 372.57 грн |
| 10+ | 319.31 грн |
| 25+ | 305.09 грн |
| 100+ | 267.24 грн |
| 1N1199A |
![]() |
Виробник: GeneSiC Semiconductor
Description: DIODE STANDARD 50V 12A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 12A
Supplier Device Package: DO-4
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Description: DIODE STANDARD 50V 12A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 12A
Supplier Device Package: DO-4
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
товару немає в наявності
В кошику
од. на суму грн.
| GBU6K |
![]() |
Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 800V 6A GBU
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Description: BRIDGE RECT 1PHASE 800V 6A GBU
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
товару немає в наявності
В кошику
од. на суму грн.
| GBU6M |
![]() |
Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 1KV 6A GBU
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Description: BRIDGE RECT 1PHASE 1KV 6A GBU
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товару немає в наявності
В кошику
од. на суму грн.
| GBPC2501W |
![]() |
Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1P 50V 25A GBPC-W
Packaging: Bulk
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Description: BRIDGE RECT 1P 50V 25A GBPC-W
Packaging: Bulk
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
товару немає в наявності
В кошику
од. на суму грн.
| 1N3893 |
![]() |
Виробник: GeneSiC Semiconductor
Description: DIODE STANDARD 600V 12A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 12A
Supplier Device Package: DO-4
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 12 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Description: DIODE STANDARD 600V 12A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 12A
Supplier Device Package: DO-4
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 12 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
товару немає в наявності
В кошику
од. на суму грн.
| GBU4K |
![]() |
Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 800V 4A GBU
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Description: BRIDGE RECT 1PHASE 800V 4A GBU
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
товару немає в наявності
В кошику
од. на суму грн.
| KBP206G | ![]() |
![]() |
Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 600V 2A KBP
Packaging: Bulk
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: BRIDGE RECT 1PHASE 600V 2A KBP
Packaging: Bulk
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товару немає в наявності
В кошику
од. на суму грн.
| GBPC3510W |
![]() |
Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1P 1KV 35A GBPC-W
Packaging: Bulk
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Description: BRIDGE RECT 1P 1KV 35A GBPC-W
Packaging: Bulk
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товару немає в наявності
В кошику
од. на суму грн.
| GBU4M |
![]() |
Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 1KV 4A GBU
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Description: BRIDGE RECT 1PHASE 1KV 4A GBU
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товару немає в наявності
В кошику
од. на суму грн.
| KBU8G |
![]() |
Виробник: GeneSiC Semiconductor
Bridge Rectifiers 400V 8A Bridge Rectifier
Bridge Rectifiers 400V 8A Bridge Rectifier
на замовлення 2408 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 117.61 грн |
| 10+ | 93.09 грн |
| 25+ | 72.93 грн |
| 100+ | 64.07 грн |
| 250+ | 59.41 грн |
| 400+ | 49.94 грн |
| 1200+ | 44.45 грн |
| GBU8D |
![]() |
Виробник: GeneSiC Semiconductor
Bridge Rectifiers 200V 8A Bridge Rectifier
Bridge Rectifiers 200V 8A Bridge Rectifier
на замовлення 5323 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 132.75 грн |
| 10+ | 92.21 грн |
| 25+ | 60.86 грн |
| 100+ | 55.21 грн |
| 250+ | 46.81 грн |
| 500+ | 44.14 грн |
| 1000+ | 39.71 грн |
| GBPC2502W |
![]() |
Виробник: GeneSiC Semiconductor
Bridge Rectifiers 200 V - 25 A
Bridge Rectifiers 200 V - 25 A
на замовлення 2058 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 321.63 грн |
| 10+ | 252.05 грн |
| 25+ | 200.08 грн |
| 100+ | 174.88 грн |
| 250+ | 159.61 грн |
| 500+ | 148.92 грн |
| 1000+ | 144.33 грн |
| KBPC2504T |
![]() |
Виробник: GeneSiC Semiconductor
Bridge Rectifiers 400 V - 25 A
Bridge Rectifiers 400 V - 25 A
на замовлення 202 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 298.47 грн |
| 10+ | 232.73 грн |
| 25+ | 184.05 грн |
| 100+ | 158.84 грн |
| 250+ | 143.57 грн |
| 500+ | 135.17 грн |
| 1000+ | 131.35 грн |
| KBPC3508W |
![]() |
Виробник: GeneSiC Semiconductor
Bridge Rectifiers 800 V - 35 A
Bridge Rectifiers 800 V - 35 A
на замовлення 57 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 315.40 грн |
| 10+ | 246.78 грн |
| 25+ | 195.50 грн |
| 100+ | 170.30 грн |
| 250+ | 155.79 грн |
| 500+ | 145.10 грн |
| 1000+ | 141.28 грн |
| GBU15G |
![]() |
Виробник: GeneSiC Semiconductor
Bridge Rectifiers 400V 15A Bridge Rectifier
Bridge Rectifiers 400V 15A Bridge Rectifier
на замовлення 354 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 138.10 грн |
| 10+ | 96.60 грн |
| 25+ | 73.31 грн |
| 100+ | 59.87 грн |
| 250+ | 52.24 грн |
| 500+ | 47.20 грн |
| 1000+ | 42.54 грн |
| KBJ2510G |
![]() |
Виробник: GeneSiC Semiconductor
Bridge Rectifiers 1000V 25A Bridge Rectifier
Bridge Rectifiers 1000V 25A Bridge Rectifier
товару немає в наявності
В кошику
од. на суму грн.
| KBPC15005W |
![]() |
Виробник: GeneSiC Semiconductor
Bridge Rectifiers 50 V - 15 A
Bridge Rectifiers 50 V - 15 A
на замовлення 499 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 286.89 грн |
| 10+ | 222.19 грн |
| 25+ | 175.65 грн |
| 100+ | 151.97 грн |
| 250+ | 138.23 грн |
| 500+ | 128.30 грн |
| 1000+ | 124.48 грн |
| KBPC1502W |
![]() |
Виробник: GeneSiC Semiconductor
Bridge Rectifiers 200 V - 15 A
Bridge Rectifiers 200 V - 15 A
на замовлення 809 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 286.89 грн |
| 10+ | 222.19 грн |
| 25+ | 175.65 грн |
| 100+ | 151.97 грн |
| 250+ | 138.23 грн |
| 500+ | 128.30 грн |
| 1000+ | 124.48 грн |
| KBPC2501W |
![]() |
Виробник: GeneSiC Semiconductor
Bridge Rectifiers 100 V - 25 A
Bridge Rectifiers 100 V - 25 A
на замовлення 691 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 298.47 грн |
| 10+ | 232.73 грн |
| 25+ | 184.05 грн |
| 100+ | 159.61 грн |
| 250+ | 145.10 грн |
| 500+ | 135.17 грн |
| 1000+ | 131.35 грн |
| KBPC35005W |
![]() |
Виробник: GeneSiC Semiconductor
Bridge Rectifiers 50 V - 35 A
Bridge Rectifiers 50 V - 35 A
на замовлення 940 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 315.40 грн |
| 10+ | 246.78 грн |
| 25+ | 195.50 грн |
| 100+ | 170.30 грн |
| 250+ | 155.79 грн |
| 500+ | 145.10 грн |
| 1000+ | 141.28 грн |
| KBPC3501T |
![]() |
Виробник: GeneSiC Semiconductor
Bridge Rectifiers 100 V - 35 A
Bridge Rectifiers 100 V - 35 A
на замовлення 462 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 315.40 грн |
| 10+ | 246.78 грн |
| 25+ | 195.50 грн |
| 100+ | 170.30 грн |
| 250+ | 155.79 грн |
| 500+ | 145.10 грн |
| 1000+ | 141.28 грн |
| KBPC1501W |
![]() |
Виробник: GeneSiC Semiconductor
Bridge Rectifiers 100 V - 15 A
Bridge Rectifiers 100 V - 15 A
товару немає в наявності
В кошику
од. на суму грн.
| KBJ2504G |
![]() |
Виробник: GeneSiC Semiconductor
Bridge Rectifiers 400V 25A Bridge Rectifier
Bridge Rectifiers 400V 25A Bridge Rectifier
на замовлення 570 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 198.68 грн |
| 10+ | 150.18 грн |
| 25+ | 117.61 грн |
| 100+ | 100.04 грн |
| W02M |
![]() |
Виробник: GeneSiC Semiconductor
Bridge Rectifiers 200V 1.5A Bridge Rectifier
Bridge Rectifiers 200V 1.5A Bridge Rectifier
товару немає в наявності
В кошику
од. на суму грн.
| GBU8J |
![]() |
Виробник: GeneSiC Semiconductor
Bridge Rectifiers 600V 8A Bridge Rectifier
Bridge Rectifiers 600V 8A Bridge Rectifier
на замовлення 2412 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 132.75 грн |
| 10+ | 92.21 грн |
| 25+ | 60.86 грн |
| 100+ | 55.21 грн |
| 250+ | 46.81 грн |
| 500+ | 44.14 грн |
| 1000+ | 39.71 грн |
| KBU1004 |
![]() |
Виробник: GeneSiC Semiconductor
Bridge Rectifiers 400V 10A Bridge Rectifier
Bridge Rectifiers 400V 10A Bridge Rectifier
товару немає в наявності
В кошику
од. на суму грн.
| GBPC3508W |
![]() |
Виробник: GeneSiC Semiconductor
Bridge Rectifiers 800 V - 35 A
Bridge Rectifiers 800 V - 35 A
на замовлення 418 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 352.82 грн |
| 10+ | 279.28 грн |
| 25+ | 222.99 грн |
| 100+ | 194.74 грн |
| 250+ | 178.70 грн |
| 500+ | 167.24 грн |
| 1000+ | 162.66 грн |
| GBPC3510W |
![]() |
Виробник: GeneSiC Semiconductor
Bridge Rectifiers 1000V 35A Si Bridge Rectifier
Bridge Rectifiers 1000V 35A Si Bridge Rectifier
на замовлення 341 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 352.82 грн |
| 10+ | 279.28 грн |
| 25+ | 222.99 грн |
| 100+ | 194.74 грн |
| 250+ | 178.70 грн |
| 500+ | 167.24 грн |
| 1000+ | 162.66 грн |
| KBPC5006T |
![]() |
Виробник: GeneSiC Semiconductor
Bridge Rectifiers 600 V - 50 A
Bridge Rectifiers 600 V - 50 A
на замовлення 11 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 326.09 грн |
| 10+ | 256.44 грн |
| 25+ | 203.90 грн |
| 100+ | 177.17 грн |
| 250+ | 164.95 грн |
| 500+ | 151.97 грн |
| 1000+ | 148.15 грн |
| KBPC3502W |
![]() |
Виробник: GeneSiC Semiconductor
Bridge Rectifiers 200 V - 35 A
Bridge Rectifiers 200 V - 35 A
товару немає в наявності
В кошику
од. на суму грн.
| BR305 |
![]() |
Виробник: GeneSiC Semiconductor
Bridge Rectifiers SI BRIDGE RECT BR-10 50-1000V 3A 50P/35R
Bridge Rectifiers SI BRIDGE RECT BR-10 50-1000V 3A 50P/35R
на замовлення 6794 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 120.28 грн |
| 10+ | 83.08 грн |
| 25+ | 63.31 грн |
| 100+ | 51.17 грн |
| 200+ | 44.52 грн |
| 600+ | 40.02 грн |
| 1000+ | 35.97 грн |
| BR68 |
![]() |
Виробник: GeneSiC Semiconductor
Bridge Rectifiers SI BRIDGE RECT BR-10 50-1KV 6A 800P/560R
Bridge Rectifiers SI BRIDGE RECT BR-10 50-1KV 6A 800P/560R
на замовлення 2004 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 145.23 грн |
| 10+ | 104.51 грн |
| 25+ | 79.42 грн |
| 100+ | 66.36 грн |
| 200+ | 58.50 грн |
| 600+ | 53.23 грн |
| 1000+ | 46.36 грн |
| KBPC3506W |
![]() |
Виробник: GeneSiC Semiconductor
Bridge Rectifiers 600 V - 35 A
Bridge Rectifiers 600 V - 35 A
на замовлення 3 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 315.40 грн |
| 10+ | 246.78 грн |
| 25+ | 195.50 грн |
| 100+ | 170.30 грн |
| 250+ | 155.79 грн |
| 500+ | 145.10 грн |
| 1000+ | 141.28 грн |
| KBPC2506T |
![]() |
Виробник: GeneSiC Semiconductor
Bridge Rectifiers 600 V - 25 A
Bridge Rectifiers 600 V - 25 A
на замовлення 200 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 298.47 грн |
| 10+ | 232.73 грн |
| 25+ | 184.05 грн |
| 100+ | 159.61 грн |
| 250+ | 145.10 грн |
| 500+ | 135.17 грн |
| 1000+ | 131.35 грн |
| KBPC2502W |
![]() |
Виробник: GeneSiC Semiconductor
Bridge Rectifiers 200 V - 25 A
Bridge Rectifiers 200 V - 25 A
на замовлення 240 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 298.47 грн |
| 10+ | 232.73 грн |
| 25+ | 184.05 грн |
| 100+ | 159.61 грн |
| 250+ | 145.10 грн |
| 500+ | 135.17 грн |
| 1000+ | 131.35 грн |
| KBL404G |
![]() |
Виробник: GeneSiC Semiconductor
Bridge Rectifiers 400V 4A Bridge Rectifier
Bridge Rectifiers 400V 4A Bridge Rectifier
на замовлення 1080 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 117.61 грн |
| 10+ | 80.09 грн |
| 25+ | 60.79 грн |
| 100+ | 49.03 грн |
| 250+ | 42.46 грн |
| 500+ | 38.11 грн |
| 1000+ | 34.14 грн |
| GBL005 |
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Виробник: GeneSiC Semiconductor
Bridge Rectifiers 50V 4A Bridge Rectifier
Bridge Rectifiers 50V 4A Bridge Rectifier
на замовлення 3434 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 398.26 грн |
| 10+ | 328.46 грн |
| 25+ | 267.29 грн |
| 100+ | 239.79 грн |
| 250+ | 223.76 грн |
| 500+ | 211.54 грн |
| 1000+ | 184.81 грн |
| KBPC2506W |
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Виробник: GeneSiC Semiconductor
Bridge Rectifiers 600 V - 25 A
Bridge Rectifiers 600 V - 25 A
на замовлення 1484 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 298.47 грн |
| 10+ | 232.73 грн |
| 25+ | 184.05 грн |
| 100+ | 159.61 грн |
| 250+ | 145.10 грн |
| 500+ | 135.17 грн |
| 1000+ | 131.35 грн |
| KBPC3502T |
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Виробник: GeneSiC Semiconductor
Bridge Rectifiers 200 V - 35 A
Bridge Rectifiers 200 V - 35 A
на замовлення 615 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 315.40 грн |
| 10+ | 246.78 грн |
| 25+ | 195.50 грн |
| 100+ | 170.30 грн |
| 250+ | 155.79 грн |
| 500+ | 145.10 грн |
| 1000+ | 141.28 грн |







