Продукція > GENESIC SEMICONDUCTOR > Всі товари виробника GENESIC SEMICONDUCTOR (5673) > Сторінка 35 з 95
| Фото | Назва | Виробник | Інформація |
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KBP210G | GeneSiC Semiconductor |
Description: BRIDGE RECT 1PHASE 1KV 2A KBPPackaging: Bulk Package / Case: 4-SIP, KBP Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: KBP Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 2 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A Current - Reverse Leakage @ Vr: 10 µA @ 1000 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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GBPC3504W | GeneSiC Semiconductor |
Description: BRIDGE RECT 1P 400V 35A GBPC-WPackaging: Bulk Package / Case: 4-Square, GBPC-W Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBPC-W Voltage - Peak Reverse (Max): 400 V Current - Average Rectified (Io): 35 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V |
на замовлення 1750 шт: термін постачання 21-31 дні (днів) |
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| 1N2128AR | GeneSiC Semiconductor |
Description: DIODE STANDARD REV 50V 60A DO5Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Chassis, Stud Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard, Reverse Polarity Current - Average Rectified (Io): 60A Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 200°C Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 60 A Current - Reverse Leakage @ Vr: 10 µA @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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GE06MPS06E-TR | GeneSiC Semiconductor |
Description: 650V 6A TO-252-2 SIC SCHOTTKY MPPackaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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GE06MPS06E-TR | GeneSiC Semiconductor |
Description: 650V 6A TO-252-2 SIC SCHOTTKY MPPackaging: Cut Tape (CT) |
на замовлення 2490 шт: термін постачання 21-31 дні (днів) |
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KBP208G | GeneSiC Semiconductor |
Description: BRIDGE RECT 1PHASE 800V 2A KBPPackaging: Bulk Package / Case: 4-SIP, KBP Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: KBP Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 2 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A Current - Reverse Leakage @ Vr: 10 µA @ 50 V |
на замовлення 471 шт: термін постачання 21-31 дні (днів) |
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KBP202G | GeneSiC Semiconductor |
Description: BRIDGE RECT 1PHASE 100V 2A KBPPackaging: Bulk Package / Case: 4-SIP, KBP Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: KBP Voltage - Peak Reverse (Max): 100 V Current - Average Rectified (Io): 2 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A Current - Reverse Leakage @ Vr: 10 µA @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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GD05MPS17J-TR | GeneSiC Semiconductor |
Description: DIODE SIL CARB 1700V 15A TO2637Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 361pF @ 1V, 1MHz Current - Average Rectified (Io): 15A Supplier Device Package: TO-263-7 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1700 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A Current - Reverse Leakage @ Vr: 20 µA @ 1700 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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GD05MPS17J-TR | GeneSiC Semiconductor |
Description: DIODE SIL CARB 1700V 15A TO2637Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 361pF @ 1V, 1MHz Current - Average Rectified (Io): 15A Supplier Device Package: TO-263-7 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1700 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A Current - Reverse Leakage @ Vr: 20 µA @ 1700 V |
на замовлення 137 шт: термін постачання 21-31 дні (днів) |
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1N1199A | GeneSiC Semiconductor |
Description: DIODE STANDARD 50V 12A DO4Packaging: Bulk Package / Case: DO-203AA, DO-4, Stud Mounting Type: Chassis, Stud Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 12A Supplier Device Package: DO-4 Operating Temperature - Junction: -65°C ~ 200°C Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12 A Current - Reverse Leakage @ Vr: 10 µA @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| GBU6K | GeneSiC Semiconductor |
Description: BRIDGE RECT 1PHASE 800V 6A GBUPackaging: Bulk Package / Case: 4-SIP, GBU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBU Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 6 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| GBU6M | GeneSiC Semiconductor |
Description: BRIDGE RECT 1PHASE 1KV 6A GBUPackaging: Bulk Package / Case: 4-SIP, GBU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBU Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 6 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| 1N3893 | GeneSiC Semiconductor |
Description: DIODE STANDARD 600V 12A DO4Packaging: Bulk Package / Case: DO-203AA, DO-4, Stud Mounting Type: Chassis, Stud Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200 ns Technology: Standard Current - Average Rectified (Io): 12A Supplier Device Package: DO-4 Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 12 A Current - Reverse Leakage @ Vr: 25 µA @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| GBU4K | GeneSiC Semiconductor |
Description: BRIDGE RECT 1PHASE 800V 4A GBUPackaging: Bulk Package / Case: 4-SIP, GBU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBU Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 4 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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GD05MPS17J | GeneSiC Semiconductor |
Description: DIODE SIL CARB 1.7KV 18A TO263-7Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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KBP206G | GeneSiC Semiconductor |
Description: BRIDGE RECT 1PHASE 600V 2A KBPPackaging: Bulk Package / Case: 4-SIP, KBP Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: KBP Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 2 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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GBPC3510W | GeneSiC Semiconductor |
Description: BRIDGE RECT 1P 1KV 35A GBPC-WPackaging: Bulk Package / Case: 4-Square, GBPC-W Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBPC-W Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 35 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
на замовлення 1874 шт: термін постачання 21-31 дні (днів) |
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| GBU4M | GeneSiC Semiconductor |
Description: BRIDGE RECT 1PHASE 1KV 4A GBUPackaging: Bulk Package / Case: 4-SIP, GBU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBU Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 4 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| KBJ402G | GeneSiC Semiconductor |
Description: BRIDGE RECT 1PHASE 200V 4A KBJPackaging: Bulk Package / Case: 4-SIP, KBJ Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: KBJ Voltage - Peak Reverse (Max): 200 V Current - Average Rectified (Io): 4 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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MBRT120100 | GeneSiC Semiconductor |
Description: DIODE MOD SCHOTT 100V 60A 3TOWERPackaging: Bulk Package / Case: Three Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 60A Supplier Device Package: Three Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 880 mV @ 60 A Current - Reverse Leakage @ Vr: 1 mA @ 20 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MBRT120100R | GeneSiC Semiconductor |
Description: DIODE MOD SCHOTT 100V 60A 3TOWERPackaging: Bulk Package / Case: Three Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 60A Supplier Device Package: Three Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 880 mV @ 60 A Current - Reverse Leakage @ Vr: 1 mA @ 20 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| MBR7535 | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 35V 75A DO5Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Chassis, Stud Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 75A Supplier Device Package: DO-5 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 35 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 75 A Current - Reverse Leakage @ Vr: 1 mA @ 35 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| MBR7545 | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 45V 75A DO5Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Chassis, Stud Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 75A Supplier Device Package: DO-5 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 650 mV @ 75 A Current - Reverse Leakage @ Vr: 1 mA @ 45 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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MSRT250100A | GeneSiC Semiconductor |
Description: DIODE MOD GP 1000V 250A 3TOWER Packaging: Bulk Package / Case: Three Tower Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 250A (DC) Supplier Device Package: Three Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 250 A Current - Reverse Leakage @ Vr: 15 µA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MSRTA400100A | GeneSiC Semiconductor |
Description: DIODE MOD GP 1000V 400A 3TOWERPackaging: Bulk Package / Case: Three Tower Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 400A (DC) Supplier Device Package: Three Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 400 A Current - Reverse Leakage @ Vr: 25 µA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MSRTA500100A | GeneSiC Semiconductor |
Description: DIODE MOD GP 1000V 500A 3TOWER Packaging: Bulk Package / Case: Three Tower Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 500A (DC) Supplier Device Package: Three Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 A Current - Reverse Leakage @ Vr: 25 µA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MSRTA600100A | GeneSiC Semiconductor |
Description: DIODE MOD GP 1000V 600A 3TOWERPackaging: Bulk Package / Case: 3-SMD Module Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 600A (DC) Supplier Device Package: Three Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 600 A Current - Reverse Leakage @ Vr: 25 µA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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GBPC3501W | GeneSiC Semiconductor |
Description: BRIDGE RECT 1P 100V 35A GBPC-WPackaging: Bulk Package / Case: 4-Square, GBPC-W Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBPC-W Voltage - Peak Reverse (Max): 100 V Current - Average Rectified (Io): 35 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A Current - Reverse Leakage @ Vr: 5 µA @ 100 V |
на замовлення 1136 шт: термін постачання 21-31 дні (днів) |
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| KBL406G | GeneSiC Semiconductor |
Description: BRIDGE RECT 1PHASE 600V 4A KBLPackaging: Bulk Package / Case: 4-SIP, KBL Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -50°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: KBL Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 4 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| KBP206 | GeneSiC Semiconductor |
Description: BRIDGE RECT 1PHASE 600V 2A KBPPackaging: Bulk Package / Case: 4-SIP, KBP Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -50°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: KBP Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 2 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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MBR60020CTL | GeneSiC Semiconductor |
Description: DIODE MOD SCHOTT 20V 300A 2TOWERPackaging: Bulk Package / Case: Twin Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 300A Supplier Device Package: Twin Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 20 V Voltage - Forward (Vf) (Max) @ If: 580 mV @ 300 A Current - Reverse Leakage @ Vr: 3 mA @ 20 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MBR60020CTRL | GeneSiC Semiconductor |
Description: DIODE MOD SCHOTT 20V 300A 2TOWERPackaging: Bulk Package / Case: Twin Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 300A Supplier Device Package: Twin Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 20 V Voltage - Forward (Vf) (Max) @ If: 580 mV @ 300 A Current - Reverse Leakage @ Vr: 3 mA @ 20 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MBR60020CT | GeneSiC Semiconductor |
Description: DIODE MOD SCHOTT 20V 300A 2TOWERPackaging: Bulk Package / Case: Twin Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 300A Supplier Device Package: Twin Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 20 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 300 A Current - Reverse Leakage @ Vr: 1 mA @ 20 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MBR60020CTR | GeneSiC Semiconductor |
Description: DIODE MOD SCHOTT 20V 300A 2TOWERPackaging: Bulk Package / Case: Twin Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 300A Supplier Device Package: Twin Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 20 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 300 A Current - Reverse Leakage @ Vr: 1 mA @ 20 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MBR600200CTR | GeneSiC Semiconductor |
Description: DIODE MOD SCHOT 200V 300A 2TOWERPackaging: Bulk Package / Case: Twin Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 300A Supplier Device Package: Twin Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 920 mV @ 300 A Current - Reverse Leakage @ Vr: 3 mA @ 200 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| KBP208 | GeneSiC Semiconductor |
Description: BRIDGE RECT 1PHASE 800V 2A KBPPackaging: Bulk Package / Case: 4-SIP, KBP Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -50°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: KBP Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 2 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A Current - Reverse Leakage @ Vr: 10 µA @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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KBU8G | GeneSiC Semiconductor |
Bridge Rectifiers 400V 8A Bridge Rectifier |
на замовлення 2408 шт: термін постачання 21-30 дні (днів) |
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GBU8D | GeneSiC Semiconductor |
Bridge Rectifiers 200V 8A Bridge Rectifier |
на замовлення 3462 шт: термін постачання 21-30 дні (днів) |
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GBPC2502W | GeneSiC Semiconductor |
Bridge Rectifiers 200 V - 25 A |
на замовлення 2058 шт: термін постачання 21-30 дні (днів) |
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KBPC2504T | GeneSiC Semiconductor |
Bridge Rectifiers 400 V - 25 A |
на замовлення 195 шт: термін постачання 21-30 дні (днів) |
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KBPC3508W | GeneSiC Semiconductor |
Bridge Rectifiers 800 V - 35 A |
на замовлення 57 шт: термін постачання 21-30 дні (днів) |
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GBU15G | GeneSiC Semiconductor |
Bridge Rectifiers 400V 15A Bridge Rectifier |
на замовлення 354 шт: термін постачання 21-30 дні (днів) |
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KBJ2510G | GeneSiC Semiconductor |
Bridge Rectifiers 1000V 25A Bridge Rectifier |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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KBPC15005W | GeneSiC Semiconductor |
Bridge Rectifiers 50 V - 15 A |
на замовлення 499 шт: термін постачання 21-30 дні (днів) |
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KBPC1502W | GeneSiC Semiconductor |
Bridge Rectifiers 200 V - 15 A |
на замовлення 809 шт: термін постачання 21-30 дні (днів) |
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KBPC2501W | GeneSiC Semiconductor |
Bridge Rectifiers 100 V - 25 A |
на замовлення 691 шт: термін постачання 21-30 дні (днів) |
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KBPC35005W | GeneSiC Semiconductor |
Bridge Rectifiers 50 V - 35 A |
на замовлення 940 шт: термін постачання 21-30 дні (днів) |
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KBPC3501T | GeneSiC Semiconductor |
Bridge Rectifiers 100 V - 35 A |
на замовлення 462 шт: термін постачання 21-30 дні (днів) |
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KBPC1501W | GeneSiC Semiconductor |
Bridge Rectifiers 100 V - 15 A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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KBJ2504G | GeneSiC Semiconductor |
Bridge Rectifiers 400V 25A Bridge Rectifier |
на замовлення 570 шт: термін постачання 21-30 дні (днів) |
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| W02M | GeneSiC Semiconductor |
Bridge Rectifiers 200V 1.5A Bridge Rectifier |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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GBU8J | GeneSiC Semiconductor |
Bridge Rectifiers 600V 8A Bridge Rectifier |
на замовлення 1660 шт: термін постачання 21-30 дні (днів) |
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KBU1004 | GeneSiC Semiconductor |
Bridge Rectifiers 400V 10A Bridge Rectifier |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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GBPC3508W | GeneSiC Semiconductor |
Bridge Rectifiers 800 V - 35 A |
на замовлення 377 шт: термін постачання 21-30 дні (днів) |
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GBPC3510W | GeneSiC Semiconductor |
Bridge Rectifiers 1000V 35A Si Bridge Rectifier |
на замовлення 837 шт: термін постачання 21-30 дні (днів) |
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KBPC5006T | GeneSiC Semiconductor |
Bridge Rectifiers 600 V - 50 A |
на замовлення 10 шт: термін постачання 21-30 дні (днів) |
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KBPC3502W | GeneSiC Semiconductor |
Bridge Rectifiers 200 V - 35 A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BR305 | GeneSiC Semiconductor |
Bridge Rectifiers SI BRIDGE RECT BR-10 50-1000V 3A 50P/35R |
на замовлення 6810 шт: термін постачання 21-30 дні (днів) |
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BR68 | GeneSiC Semiconductor |
Bridge Rectifiers SI BRIDGE RECT BR-10 50-1KV 6A 800P/560R |
на замовлення 2004 шт: термін постачання 21-30 дні (днів) |
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KBPC3506W | GeneSiC Semiconductor |
Bridge Rectifiers 600 V - 35 A |
товару немає в наявності |
В кошику од. на суму грн. |
| KBP210G |
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Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 1KV 2A KBP
Packaging: Bulk
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Description: BRIDGE RECT 1PHASE 1KV 2A KBP
Packaging: Bulk
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
товару немає в наявності
В кошику
од. на суму грн.
| GBPC3504W |
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Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1P 400V 35A GBPC-W
Packaging: Bulk
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Description: BRIDGE RECT 1P 400V 35A GBPC-W
Packaging: Bulk
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
на замовлення 1750 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 335.07 грн |
| 10+ | 258.86 грн |
| 25+ | 237.20 грн |
| 100+ | 195.07 грн |
| 250+ | 178.75 грн |
| 500+ | 167.34 грн |
| 1000+ | 154.03 грн |
| 1N2128AR |
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Виробник: GeneSiC Semiconductor
Description: DIODE STANDARD REV 50V 60A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 60A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 60 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Description: DIODE STANDARD REV 50V 60A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 60A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 60 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
товару немає в наявності
В кошику
од. на суму грн.
| GE06MPS06E-TR |
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Виробник: GeneSiC Semiconductor
Description: 650V 6A TO-252-2 SIC SCHOTTKY MP
Packaging: Tape & Reel (TR)
Description: 650V 6A TO-252-2 SIC SCHOTTKY MP
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| GE06MPS06E-TR |
![]() |
Виробник: GeneSiC Semiconductor
Description: 650V 6A TO-252-2 SIC SCHOTTKY MP
Packaging: Cut Tape (CT)
Description: 650V 6A TO-252-2 SIC SCHOTTKY MP
Packaging: Cut Tape (CT)
на замовлення 2490 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 300.64 грн |
| 10+ | 185.75 грн |
| 25+ | 158.63 грн |
| 100+ | 120.10 грн |
| 250+ | 105.97 грн |
| 500+ | 97.28 грн |
| 1000+ | 88.53 грн |
| KBP208G |
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Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 800V 2A KBP
Packaging: Bulk
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Description: BRIDGE RECT 1PHASE 800V 2A KBP
Packaging: Bulk
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
на замовлення 471 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 90.70 грн |
| 10+ | 53.94 грн |
| 25+ | 44.41 грн |
| 100+ | 31.14 грн |
| 250+ | 25.69 грн |
| KBP202G |
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Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 100V 2A KBP
Packaging: Bulk
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Description: BRIDGE RECT 1PHASE 100V 2A KBP
Packaging: Bulk
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
товару немає в наявності
В кошику
од. на суму грн.
| GD05MPS17J-TR |
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Виробник: GeneSiC Semiconductor
Description: DIODE SIL CARB 1700V 15A TO2637
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 361pF @ 1V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-263-7
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A
Current - Reverse Leakage @ Vr: 20 µA @ 1700 V
Description: DIODE SIL CARB 1700V 15A TO2637
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 361pF @ 1V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-263-7
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A
Current - Reverse Leakage @ Vr: 20 µA @ 1700 V
товару немає в наявності
В кошику
од. на суму грн.
| GD05MPS17J-TR |
![]() |
Виробник: GeneSiC Semiconductor
Description: DIODE SIL CARB 1700V 15A TO2637
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 361pF @ 1V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-263-7
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A
Current - Reverse Leakage @ Vr: 20 µA @ 1700 V
Description: DIODE SIL CARB 1700V 15A TO2637
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 361pF @ 1V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-263-7
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A
Current - Reverse Leakage @ Vr: 20 µA @ 1700 V
на замовлення 137 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 378.74 грн |
| 10+ | 324.60 грн |
| 25+ | 310.14 грн |
| 100+ | 271.67 грн |
| 1N1199A |
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Виробник: GeneSiC Semiconductor
Description: DIODE STANDARD 50V 12A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 12A
Supplier Device Package: DO-4
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Description: DIODE STANDARD 50V 12A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 12A
Supplier Device Package: DO-4
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
товару немає в наявності
В кошику
од. на суму грн.
| GBU6K |
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Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 800V 6A GBU
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Description: BRIDGE RECT 1PHASE 800V 6A GBU
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
товару немає в наявності
В кошику
од. на суму грн.
| GBU6M |
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Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 1KV 6A GBU
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Description: BRIDGE RECT 1PHASE 1KV 6A GBU
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товару немає в наявності
В кошику
од. на суму грн.
| 1N3893 |
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Виробник: GeneSiC Semiconductor
Description: DIODE STANDARD 600V 12A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 12A
Supplier Device Package: DO-4
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 12 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Description: DIODE STANDARD 600V 12A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 12A
Supplier Device Package: DO-4
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 12 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
товару немає в наявності
В кошику
од. на суму грн.
| GBU4K |
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Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 800V 4A GBU
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Description: BRIDGE RECT 1PHASE 800V 4A GBU
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
товару немає в наявності
В кошику
од. на суму грн.
| KBP206G | ![]() |
![]() |
Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 600V 2A KBP
Packaging: Bulk
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: BRIDGE RECT 1PHASE 600V 2A KBP
Packaging: Bulk
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товару немає в наявності
В кошику
од. на суму грн.
| GBPC3510W |
![]() |
Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1P 1KV 35A GBPC-W
Packaging: Bulk
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Description: BRIDGE RECT 1P 1KV 35A GBPC-W
Packaging: Bulk
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
на замовлення 1874 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 335.07 грн |
| 10+ | 258.86 грн |
| 25+ | 237.20 грн |
| 100+ | 195.07 грн |
| 250+ | 178.75 грн |
| 500+ | 167.34 грн |
| 1000+ | 154.03 грн |
| GBU4M |
![]() |
Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 1KV 4A GBU
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Description: BRIDGE RECT 1PHASE 1KV 4A GBU
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товару немає в наявності
В кошику
од. на суму грн.
| KBJ402G |
![]() |
Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 200V 4A KBJ
Packaging: Bulk
Package / Case: 4-SIP, KBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBJ
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Description: BRIDGE RECT 1PHASE 200V 4A KBJ
Packaging: Bulk
Package / Case: 4-SIP, KBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBJ
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товару немає в наявності
В кошику
од. на суму грн.
| MBRT120100 |
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Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 100V 60A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 60 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Description: DIODE MOD SCHOTT 100V 60A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 60 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
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| MBRT120100R |
![]() |
Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 100V 60A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 60 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Description: DIODE MOD SCHOTT 100V 60A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 60 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
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| MBR7535 |
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Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 35V 75A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 75A
Supplier Device Package: DO-5
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 75 A
Current - Reverse Leakage @ Vr: 1 mA @ 35 V
Description: DIODE SCHOTTKY 35V 75A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 75A
Supplier Device Package: DO-5
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 75 A
Current - Reverse Leakage @ Vr: 1 mA @ 35 V
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| MBR7545 |
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Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 45V 75A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 75A
Supplier Device Package: DO-5
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 75 A
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
Description: DIODE SCHOTTKY 45V 75A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 75A
Supplier Device Package: DO-5
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 75 A
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
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| MSRT250100A |
Виробник: GeneSiC Semiconductor
Description: DIODE MOD GP 1000V 250A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 250A (DC)
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 250 A
Current - Reverse Leakage @ Vr: 15 µA @ 600 V
Description: DIODE MOD GP 1000V 250A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 250A (DC)
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 250 A
Current - Reverse Leakage @ Vr: 15 µA @ 600 V
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| MSRTA400100A |
![]() |
Виробник: GeneSiC Semiconductor
Description: DIODE MOD GP 1000V 400A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 400A (DC)
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 400 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
Description: DIODE MOD GP 1000V 400A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 400A (DC)
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 400 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
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| MSRTA500100A |
Виробник: GeneSiC Semiconductor
Description: DIODE MOD GP 1000V 500A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 500A (DC)
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
Description: DIODE MOD GP 1000V 500A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 500A (DC)
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
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| MSRTA600100A |
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Виробник: GeneSiC Semiconductor
Description: DIODE MOD GP 1000V 600A 3TOWER
Packaging: Bulk
Package / Case: 3-SMD Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 600A (DC)
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 600 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
Description: DIODE MOD GP 1000V 600A 3TOWER
Packaging: Bulk
Package / Case: 3-SMD Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 600A (DC)
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 600 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
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| GBPC3501W |
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Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1P 100V 35A GBPC-W
Packaging: Bulk
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Description: BRIDGE RECT 1P 100V 35A GBPC-W
Packaging: Bulk
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
на замовлення 1136 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 335.07 грн |
| 10+ | 258.86 грн |
| 25+ | 237.20 грн |
| 100+ | 195.07 грн |
| 250+ | 178.75 грн |
| 500+ | 167.34 грн |
| 1000+ | 154.03 грн |
| KBL406G |
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Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 600V 4A KBL
Packaging: Bulk
Package / Case: 4-SIP, KBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBL
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: BRIDGE RECT 1PHASE 600V 4A KBL
Packaging: Bulk
Package / Case: 4-SIP, KBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBL
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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| KBP206 |
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Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 600V 2A KBP
Packaging: Bulk
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: BRIDGE RECT 1PHASE 600V 2A KBP
Packaging: Bulk
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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| MBR60020CTL |
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Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 20V 300A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 300A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 300 A
Current - Reverse Leakage @ Vr: 3 mA @ 20 V
Description: DIODE MOD SCHOTT 20V 300A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 300A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 300 A
Current - Reverse Leakage @ Vr: 3 mA @ 20 V
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| MBR60020CTRL |
![]() |
Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 20V 300A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 300A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 300 A
Current - Reverse Leakage @ Vr: 3 mA @ 20 V
Description: DIODE MOD SCHOTT 20V 300A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 300A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 300 A
Current - Reverse Leakage @ Vr: 3 mA @ 20 V
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| MBR60020CT |
![]() |
Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 20V 300A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 300A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 300 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Description: DIODE MOD SCHOTT 20V 300A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 300A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 300 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
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| MBR60020CTR |
![]() |
Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 20V 300A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 300A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 300 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Description: DIODE MOD SCHOTT 20V 300A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 300A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 300 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
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| MBR600200CTR |
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Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOT 200V 300A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 300A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 300 A
Current - Reverse Leakage @ Vr: 3 mA @ 200 V
Description: DIODE MOD SCHOT 200V 300A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 300A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 300 A
Current - Reverse Leakage @ Vr: 3 mA @ 200 V
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| KBP208 |
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Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 800V 2A KBP
Packaging: Bulk
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Description: BRIDGE RECT 1PHASE 800V 2A KBP
Packaging: Bulk
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
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| KBU8G |
![]() |
Виробник: GeneSiC Semiconductor
Bridge Rectifiers 400V 8A Bridge Rectifier
Bridge Rectifiers 400V 8A Bridge Rectifier
на замовлення 2408 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 119.55 грн |
| 10+ | 94.63 грн |
| 25+ | 74.14 грн |
| 100+ | 65.13 грн |
| 250+ | 60.40 грн |
| 400+ | 50.77 грн |
| 1200+ | 45.18 грн |
| GBU8D |
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Виробник: GeneSiC Semiconductor
Bridge Rectifiers 200V 8A Bridge Rectifier
Bridge Rectifiers 200V 8A Bridge Rectifier
на замовлення 3462 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 122.27 грн |
| 10+ | 85.26 грн |
| 25+ | 64.20 грн |
| 100+ | 51.94 грн |
| 250+ | 45.10 грн |
| 500+ | 40.60 грн |
| 1000+ | 36.49 грн |
| GBPC2502W |
![]() |
Виробник: GeneSiC Semiconductor
Bridge Rectifiers 200 V - 25 A
Bridge Rectifiers 200 V - 25 A
на замовлення 2058 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 326.96 грн |
| 10+ | 256.23 грн |
| 25+ | 203.40 грн |
| 100+ | 177.00 грн |
| 250+ | 161.48 грн |
| 500+ | 150.61 грн |
| 1000+ | 146.73 грн |
| KBPC2504T |
![]() |
Виробник: GeneSiC Semiconductor
Bridge Rectifiers 400 V - 25 A
Bridge Rectifiers 400 V - 25 A
на замовлення 195 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 303.42 грн |
| 10+ | 236.59 грн |
| 25+ | 187.10 грн |
| 100+ | 161.48 грн |
| 250+ | 145.95 грн |
| 500+ | 137.41 грн |
| 1000+ | 133.53 грн |
| KBPC3508W |
![]() |
Виробник: GeneSiC Semiconductor
Bridge Rectifiers 800 V - 35 A
Bridge Rectifiers 800 V - 35 A
на замовлення 57 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 320.62 грн |
| 10+ | 250.87 грн |
| 25+ | 198.74 грн |
| 100+ | 173.12 грн |
| 250+ | 158.37 грн |
| 500+ | 147.50 грн |
| 1000+ | 143.62 грн |
| GBU15G |
![]() |
Виробник: GeneSiC Semiconductor
Bridge Rectifiers 400V 15A Bridge Rectifier
Bridge Rectifiers 400V 15A Bridge Rectifier
на замовлення 354 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 140.39 грн |
| 10+ | 98.21 грн |
| 25+ | 74.53 грн |
| 100+ | 60.86 грн |
| 250+ | 53.10 грн |
| 500+ | 47.98 грн |
| 1000+ | 43.24 грн |
| KBJ2510G |
![]() |
Виробник: GeneSiC Semiconductor
Bridge Rectifiers 1000V 25A Bridge Rectifier
Bridge Rectifiers 1000V 25A Bridge Rectifier
товару немає в наявності
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| KBPC15005W |
![]() |
Виробник: GeneSiC Semiconductor
Bridge Rectifiers 50 V - 15 A
Bridge Rectifiers 50 V - 15 A
на замовлення 499 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 291.64 грн |
| 10+ | 225.87 грн |
| 25+ | 178.56 грн |
| 100+ | 154.49 грн |
| 250+ | 140.52 грн |
| 500+ | 130.42 грн |
| 1000+ | 126.54 грн |
| KBPC1502W |
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Виробник: GeneSiC Semiconductor
Bridge Rectifiers 200 V - 15 A
Bridge Rectifiers 200 V - 15 A
на замовлення 809 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 291.64 грн |
| 10+ | 225.87 грн |
| 25+ | 178.56 грн |
| 100+ | 154.49 грн |
| 250+ | 140.52 грн |
| 500+ | 130.42 грн |
| 1000+ | 126.54 грн |
| KBPC2501W |
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Виробник: GeneSiC Semiconductor
Bridge Rectifiers 100 V - 25 A
Bridge Rectifiers 100 V - 25 A
на замовлення 691 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 303.42 грн |
| 10+ | 236.59 грн |
| 25+ | 187.10 грн |
| 100+ | 162.25 грн |
| 250+ | 147.50 грн |
| 500+ | 137.41 грн |
| 1000+ | 133.53 грн |
| KBPC35005W |
![]() |
Виробник: GeneSiC Semiconductor
Bridge Rectifiers 50 V - 35 A
Bridge Rectifiers 50 V - 35 A
на замовлення 940 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 320.62 грн |
| 10+ | 250.87 грн |
| 25+ | 198.74 грн |
| 100+ | 173.12 грн |
| 250+ | 158.37 грн |
| 500+ | 147.50 грн |
| 1000+ | 143.62 грн |
| KBPC3501T |
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Виробник: GeneSiC Semiconductor
Bridge Rectifiers 100 V - 35 A
Bridge Rectifiers 100 V - 35 A
на замовлення 462 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 320.62 грн |
| 10+ | 250.87 грн |
| 25+ | 198.74 грн |
| 100+ | 173.12 грн |
| 250+ | 158.37 грн |
| 500+ | 147.50 грн |
| 1000+ | 143.62 грн |
| KBPC1501W |
![]() |
Виробник: GeneSiC Semiconductor
Bridge Rectifiers 100 V - 15 A
Bridge Rectifiers 100 V - 15 A
товару немає в наявності
В кошику
од. на суму грн.
| KBJ2504G |
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Виробник: GeneSiC Semiconductor
Bridge Rectifiers 400V 25A Bridge Rectifier
Bridge Rectifiers 400V 25A Bridge Rectifier
на замовлення 570 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 201.98 грн |
| 10+ | 152.67 грн |
| 25+ | 119.55 грн |
| 100+ | 101.70 грн |
| W02M |
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Виробник: GeneSiC Semiconductor
Bridge Rectifiers 200V 1.5A Bridge Rectifier
Bridge Rectifiers 200V 1.5A Bridge Rectifier
товару немає в наявності
В кошику
од. на суму грн.
| GBU8J |
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Виробник: GeneSiC Semiconductor
Bridge Rectifiers 600V 8A Bridge Rectifier
Bridge Rectifiers 600V 8A Bridge Rectifier
на замовлення 1660 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 122.27 грн |
| 10+ | 84.46 грн |
| 25+ | 64.20 грн |
| 100+ | 51.94 грн |
| 250+ | 45.10 грн |
| 500+ | 40.60 грн |
| 1000+ | 36.49 грн |
| KBU1004 |
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Виробник: GeneSiC Semiconductor
Bridge Rectifiers 400V 10A Bridge Rectifier
Bridge Rectifiers 400V 10A Bridge Rectifier
товару немає в наявності
В кошику
од. на суму грн.
| GBPC3508W |
![]() |
Виробник: GeneSiC Semiconductor
Bridge Rectifiers 800 V - 35 A
Bridge Rectifiers 800 V - 35 A
на замовлення 377 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 358.66 грн |
| 10+ | 283.90 грн |
| 25+ | 226.69 грн |
| 100+ | 197.96 грн |
| 250+ | 181.66 грн |
| 500+ | 170.02 грн |
| 1000+ | 165.36 грн |
| GBPC3510W |
![]() |
Виробник: GeneSiC Semiconductor
Bridge Rectifiers 1000V 35A Si Bridge Rectifier
Bridge Rectifiers 1000V 35A Si Bridge Rectifier
на замовлення 837 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 358.66 грн |
| 10+ | 283.90 грн |
| 25+ | 226.69 грн |
| 100+ | 197.96 грн |
| 250+ | 181.66 грн |
| 500+ | 170.02 грн |
| 1000+ | 165.36 грн |
| KBPC5006T |
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Виробник: GeneSiC Semiconductor
Bridge Rectifiers 600 V - 50 A
Bridge Rectifiers 600 V - 50 A
на замовлення 10 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 331.49 грн |
| 10+ | 260.69 грн |
| 25+ | 207.28 грн |
| 100+ | 180.11 грн |
| 250+ | 167.69 грн |
| 500+ | 154.49 грн |
| 1000+ | 150.61 грн |
| KBPC3502W |
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Виробник: GeneSiC Semiconductor
Bridge Rectifiers 200 V - 35 A
Bridge Rectifiers 200 V - 35 A
товару немає в наявності
В кошику
од. на суму грн.
| BR305 |
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Виробник: GeneSiC Semiconductor
Bridge Rectifiers SI BRIDGE RECT BR-10 50-1000V 3A 50P/35R
Bridge Rectifiers SI BRIDGE RECT BR-10 50-1000V 3A 50P/35R
на замовлення 6810 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 123.18 грн |
| 10+ | 85.26 грн |
| 25+ | 64.36 грн |
| 100+ | 52.01 грн |
| 600+ | 40.68 грн |
| 1000+ | 36.57 грн |
| 2600+ | 32.99 грн |
| BR68 |
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Виробник: GeneSiC Semiconductor
Bridge Rectifiers SI BRIDGE RECT BR-10 50-1KV 6A 800P/560R
Bridge Rectifiers SI BRIDGE RECT BR-10 50-1KV 6A 800P/560R
на замовлення 2004 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 147.63 грн |
| 10+ | 106.24 грн |
| 25+ | 80.74 грн |
| 100+ | 67.46 грн |
| 200+ | 59.47 грн |
| 600+ | 54.11 грн |
| 1000+ | 47.12 грн |
| KBPC3506W |
![]() |
Виробник: GeneSiC Semiconductor
Bridge Rectifiers 600 V - 35 A
Bridge Rectifiers 600 V - 35 A
товару немає в наявності
В кошику
од. на суму грн.








