Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (148679) > Сторінка 134 з 2478

Обрати Сторінку:   [  << Попередня Сторінка ]  1 129 130 131 132 133 134 135 136 137 138 139 247 494 741 988 1235 1482 1729 1976 2223 2470 2478  [ Наступна Сторінка >> ]
Фото Назва Виробник Інформація Доступність
Ціна
IPB80N06S2L09ATMA1 IPB80N06S2L09ATMA1 Infineon Technologies Infineon-IPP_B80N06S2L_09-DS-v01_00-en.pdf?folderId=db3a304412b407950112b426db703ad9&fileId=db3a304412b407950112b4333f475ad4&ack=t Description: MOSFET N-CH 55V 80A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 52A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 2V @ 125µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2620 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IPB80N06S2L11ATMA1 IPB80N06S2L11ATMA1 Infineon Technologies Infineon-IPP_B_I80N06S2L_11-DS-v01_01-en.pdf?folderId=db3a304412b407950112b426db703ad9&fileId=db3a304412b407950112b4333e375ac6&ack=t Description: MOSFET N-CH 55V 80A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 10.7mOhm @ 60A, 10V
Power Dissipation (Max): 158W (Tc)
Vgs(th) (Max) @ Id: 2V @ 93µA
Supplier Device Package: PG-TO263-3-2
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2075 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
IPB80N06S2L-H5 IPB80N06S2L-H5 Infineon Technologies IPB%2CIPP80N06S2L-H5.pdf Description: MOSFET N-CH 55V 80A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IPB80N06S3-05 IPB80N06S3-05 Infineon Technologies IP(B,I,P)80N06S3-05.pdf Description: MOSFET N-CH 55V 80A TO263-3
товару немає в наявності
В кошику  од. на суму  грн.
IPB80N08S2L07ATMA1 IPB80N08S2L07ATMA1 Infineon Technologies Infineon-IPP_B80N08S2L_07_GREEN-DS-v01_01-en.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b426e2333ae3&ack=t Description: MOSFET N-CH 75V 80A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 233 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IPD031N06L3GATMA1 IPD031N06L3GATMA1 Infineon Technologies IPD031N06L3_Rev2.0.pdf?folderId=db3a30431441fb5d01148ca9f1be0e77&fileId=db3a30431ddc9372011e2a9f6a9d4d02 Description: MOSFET N-CH 60V 100A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 100A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 93µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 30 V
на замовлення 60000 шт:
термін постачання 21-31 дні (днів)
2500+75.28 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
IPD034N06N3GATMA1 IPD034N06N3GATMA1 Infineon Technologies IPD034N06N3_Rev2.0.pdf?folderId=db3a30431441fb5d01148ca9f1be0e77&fileId=db3a30431ddc9372011e2a97343b4cf3 Description: MOSFET N-CH 60V 100A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 100A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 4V @ 93µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 30 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
2500+51.76 грн
5000+49.65 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
IPD035N06L3GATMA1 IPD035N06L3GATMA1 Infineon Technologies IPD035N06L3_G.pdf Description: MOSFET N-CH 60V 90A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 90A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 93µA
Supplier Device Package: PG-TO252-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 30 V
товару немає в наявності
В кошику  од. на суму  грн.
IPD036N04LGBTMA1 IPD036N04LGBTMA1 Infineon Technologies IPD036N04L_rev1.0.pdf?folderId=db3a3043163797a6011643468e7505a4&fileId=db3a3043163797a6011643476a6505a5 Description: MOSFET N-CH 40V 90A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 90A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 2V @ 45µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 20 V
товару немає в наявності
В кошику  од. на суму  грн.
IPD038N04NGBTMA1 IPD038N04NGBTMA1 Infineon Technologies IPD038N04N_G.pdf Description: MOSFET N-CH 40V 90A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 90A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 4V @ 45µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 20 V
товару немає в наявності
В кошику  од. на суму  грн.
IPD038N06N3GATMA1 IPD038N06N3GATMA1 Infineon Technologies IPD038N06N3_Rev1.01.pdf?folderId=db3a3043132679fb0113346bdc4505a3&fileId=db3a304317a7483601181bf8dae11675 Description: MOSFET N-CH 60V 90A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 90A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 30 V
товару немає в наявності
В кошику  од. на суму  грн.
IPD042P03L3GBTMA1 IPD042P03L3GBTMA1 Infineon Technologies Infineon-IPD042P03L3_G-DS-v02_02-en.pdf?fileId=db3a30431d8a6b3c011d90c8c6e60425 Description: MOSFET P-CH 30V 70A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 70A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2V @ 270µA
Supplier Device Package: PG-TO252-3-11
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 175 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12400 pF @ 15 V
товару немає в наявності
В кошику  од. на суму  грн.
IPD048N06L3GBTMA1 IPD048N06L3GBTMA1 Infineon Technologies IPD048N06L3_Rev2.0.pdf?folderId=db3a30431441fb5d01148ca9f1be0e77&fileId=db3a30431ddc9372011e2b4f496e4db0 Description: MOSFET N-CH 60V 90A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 90A, 10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 58µA
Supplier Device Package: PG-TO252-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 30 V
товару немає в наявності
В кошику  од. на суму  грн.
IPD053N06N3GBTMA1 IPD053N06N3GBTMA1 Infineon Technologies IPD053N06N3_G.pdf Description: MOSFET N-CH 60V 90A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 90A, 10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 4V @ 58µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 30 V
товару немає в наявності
В кошику  од. на суму  грн.
IPD053N08N3GBTMA1 IPD053N08N3GBTMA1 Infineon Technologies Infineon-IPD053N08N3-DS-v01_01-en.pdf?fileId=db3a304317a748360117cf072cf31ce8 Description: MOSFET N-CH 80V 90A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 90A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4750 pF @ 40 V
товару немає в наявності
В кошику  од. на суму  грн.
IPD068N10N3GBTMA1 IPD068N10N3GBTMA1 Infineon Technologies IPD068N10N3+G_Rev2.1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30431ce5fb52011d1eb7aeb615d1 Description: MOSFET N-CH 100V 90A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 90A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4910 pF @ 50 V
товару немає в наявності
В кошику  од. на суму  грн.
IPD079N06L3GBTMA1 IPD079N06L3GBTMA1 Infineon Technologies IPD079N06L3_Rev2.0.pdf?folderId=db3a30431441fb5d01148ca9f1be0e77&fileId=db3a30431ddc9372011e2b5528634dc0 Description: MOSFET N-CH 60V 50A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 50A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 34µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 30 V
товару немає в наявності
В кошику  од. на суму  грн.
IPD088N04LGBTMA1 IPD088N04LGBTMA1 Infineon Technologies IPD088N04L_G.pdf Description: MOSFET N-CH 40V 50A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 50A, 10V
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 2V @ 16µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 20 V
товару немає в наявності
В кошику  од. на суму  грн.
IPD088N06N3GBTMA1 IPD088N06N3GBTMA1 Infineon Technologies IPD088N06N3_Rev2.0.pdf?folderId=db3a30431441fb5d01148ca9f1be0e77&fileId=db3a30431ddc9372011e2b2351db4d5c Description: MOSFET N-CH 60V 50A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 50A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 4V @ 34µA
Supplier Device Package: PG-TO252-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 30 V
товару немає в наявності
В кошику  од. на суму  грн.
IPD096N08N3GBTMA1 IPD096N08N3GBTMA1 Infineon Technologies Infineon-IPD096N08N3-DS-v02_02-en.pdf?fileId=db3a30431ce5fb52011d1f35150315fe Description: MOSFET N-CH 80V 73A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 46A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 46µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 40 V
товару немає в наявності
В кошику  од. на суму  грн.
IPD105N04LGBTMA1 IPD105N04LGBTMA1 Infineon Technologies IPD105N04L_G.pdf Description: MOSFET N-CH 40V 40A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 40A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 2V @ 14µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 20 V
товару немає в наявності
В кошику  од. на суму  грн.
IPD12CN10NGBUMA1 IPD12CN10NGBUMA1 Infineon Technologies IPP12CN10N_Rev1.05.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42c236e467c Description: MOSFET N-CH 100V 67A TO252-3
товару немає в наявності
В кошику  од. на суму  грн.
IPD12CNE8N G IPD12CNE8N G Infineon Technologies IPx12CNE8N_Rev1.06.pdf Description: MOSFET N-CH 85V 67A TO252-3
товару немає в наявності
В кошику  од. на суму  грн.
IPD135N08N3GBTMA1 IPD135N08N3GBTMA1 Infineon Technologies Infineon-IPD135N08N3-DS-v02_02-en.pdf?fileId=db3a30431add1d95011ae8b1143256d4 Description: MOSFET N-CH 80V 45A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 45A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 33µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1730 pF @ 40 V
товару немає в наявності
В кошику  од. на суму  грн.
IPD14N06S280ATMA1 IPD14N06S280ATMA1 Infineon Technologies Infineon-IPD14N06S2_80-DS-v01_00-en.pdf?folderId=db3a304412b407950112b4322c6d574b&fileId=db3a304412b407950112b43349c95af6&ack=t Description: MOSFET N-CH 55V 17A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 7A, 10V
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 4V @ 14µA
Supplier Device Package: PG-TO252-3-11
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 293 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IPD15N06S2L64ATMA1 IPD15N06S2L64ATMA1 Infineon Technologies Infineon-IPD15N06S2L_64-DS-v01_00-en.pdf?folderId=db3a304412b407950112b4322c6d574b&fileId=db3a304412b407950112b4334ab35afe&ack=t Description: MOSFET N-CH 55V 19A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 64mOhm @ 13A, 10V
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 2V @ 14µA
Supplier Device Package: PG-TO252-3-11
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 354 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
IPD160N04LGBTMA1 IPD160N04LGBTMA1 Infineon Technologies IPD160N04L_G.pdf Description: MOSFET N-CH 40V 30A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 30A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 2V @ 10µA
Supplier Device Package: PG-TO252-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 20 V
товару немає в наявності
В кошику  од. на суму  грн.
IPD16CN10N G IPD16CN10N G Infineon Technologies Infineon-IPP16CN10N-DS-v01_06-en.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432313ff5e012393cd8f170432 Description: MOSFET N-CH 100V 53A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 53A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 4V @ 61µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3220 pF @ 50 V
товару немає в наявності
В кошику  од. на суму  грн.
IPD16CNE8N G IPD16CNE8N G Infineon Technologies IP(B,D,I,P)16CNE8N_G.pdf Description: MOSFET N-CH 85V 53A TO252-3
товару немає в наявності
В кошику  од. на суму  грн.
IPD170N04NGBTMA1 IPD170N04NGBTMA1 Infineon Technologies IPD170N04N_G.pdf Description: MOSFET N-CH 40V 30A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 30A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 4V @ 10µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 20 V
товару немає в наявності
В кошику  од. на суму  грн.
IPD200N15N3GBTMA1 IPD200N15N3GBTMA1 Infineon Technologies Infineon-IPD_BIP_200N15N3-DS-v02_07-en.pdf?fileId=db3a304319c6f18c0119cd1cc23279be Description: MOSFET N-CH 150V 50A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 50A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TO252-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1820 pF @ 75 V
товару немає в наявності
В кошику  од. на суму  грн.
IPD220N06L3GBTMA1 IPD220N06L3GBTMA1 Infineon Technologies IPD220N06L3_Rev2.0.pdf?folderId=db3a30431441fb5d01148ca9f1be0e77&fileId=db3a30431ddc9372011e266fb35e471a Description: MOSFET N-CH 60V 30A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 30A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 11µA
Supplier Device Package: PG-TO252-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 30 V
товару немає в наявності
В кошику  од. на суму  грн.
IPD22N08S2L50ATMA1 IPD22N08S2L50ATMA1 Infineon Technologies Infineon-IPD22N08S2L_50-DS-v01_00-en.pdf?folderId=db3a304412b407950112b426dbff3ada&fileId=db3a304412b407950112b426ee5f3b08&ack=t Description: MOSFET N-CH 75V 27A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 50A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2V @ 31µA
Supplier Device Package: PG-TO252-3-11
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 25 V
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)
2500+42.86 грн
5000+39.84 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
IPD250N06N3GBTMA1 IPD250N06N3GBTMA1 Infineon Technologies IPD250N06N3_G.pdf Description: MOSFET N-CH 60V 28A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 28A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 4V @ 11µA
Supplier Device Package: PG-TO252-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 30 V
товару немає в наявності
В кошику  од. на суму  грн.
IPD25CN10NGBUMA1 IPD25CN10NGBUMA1 Infineon Technologies Infineon-IPP26CN10N-DS-v01_09-en.pdf?fileId=db3a304412b407950112b42b420244aa Description: MOSFET N-CH 100V 35A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 35A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 4V @ 39µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2070 pF @ 50 V
товару немає в наявності
В кошику  од. на суму  грн.
IPD25CNE8N G IPD25CNE8N G Infineon Technologies IP(B,D,I,P,U)26CNE8N_G.pdf Description: MOSFET N-CH 85V 35A TO252-3
товару немає в наявності
В кошику  од. на суму  грн.
IPD25N06S240ATMA1 IPD25N06S240ATMA1 Infineon Technologies Infineon-IPD25N06S2_40-DS-v01_00-en.pdf?folderId=db3a304412b407950112b4322c6d574b&fileId=db3a304412b407950112b433b9ae5d5d&ack=t Description: MOSFET N-CH 55V 29A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 13A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 4V @ 26µA
Supplier Device Package: PG-TO252-3-11
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 513 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IPD26N06S2L35ATMA1 IPD26N06S2L35ATMA1 Infineon Technologies Infineon-IPD26N06S2L_35-DS-v01_00-en.pdf?folderId=db3a304412b407950112b4322c6d574b&fileId=db3a304412b407950112b43351ff5b22&ack=t Description: MOSFET N-CH 55V 30A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 13A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2V @ 26µA
Supplier Device Package: PG-TO252-3-11
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 621 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IPD30N03S2L07ATMA1 IPD30N03S2L07ATMA1 Infineon Technologies IPD30N03S2L-07_green.pdf?folderId=db3a304412b407950112b426f7da3b27&fileId=db3a304412b407950112b427067d3b58 Description: MOSFET N-CH 30V 30A TO252-3
товару немає в наявності
В кошику  од. на суму  грн.
IPD30N03S2L20ATMA1 IPD30N03S2L20ATMA1 Infineon Technologies Infineon-IPD30N03S2L_20-DS-v01_00-en.pdf?folderId=db3a304412b407950112b426f7da3b27&fileId=db3a304412b407950112b4270c9e3b6a&ack=t Description: MOSFET N-CH 30V 30A TO252-31
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 18A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 2V @ 23µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IPD30N03S4L09ATMA1 IPD30N03S4L09ATMA1 Infineon Technologies Infineon-IPD30N03S4L_09-DS-v01_01-en.pdf?folderId=db3a304412b407950112b426db703ad9&fileId=db3a30431ddc9372011e2b2ed46c4d6b&ack=t Description: MOSFET N-CH 30V 30A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 30A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 13µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1520 pF @ 15 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 15
Grade: Automotive
Qualification: AEC-Q101
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)
2500+21.81 грн
5000+19.38 грн
7500+18.56 грн
12500+16.88 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
IPD30N03S4L14ATMA1 IPD30N03S4L14ATMA1 Infineon Technologies Infineon-IPD30N03S4L_14-DS-v02_01-en.pdf?folderId=db3a304412b407950112b426f7da3b27&fileId=db3a304412b407950112b426f9b13b2c&ack=t Description: MOSFET N-CH 30V 30A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 13.6mOhm @ 30A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 10µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 980 pF @ 25 V
на замовлення 12500 шт:
термін постачання 21-31 дні (днів)
2500+20.63 грн
5000+18.30 грн
7500+17.51 грн
12500+15.67 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
IPD30N06S2-15 IPD30N06S2-15 Infineon Technologies IPD30N06S2-15_green.pdf?folderId=db3a304412b407950112b4322c6d574b&fileId=db3a304412b407950112b433e70a5e0a Description: MOSFET N-CH 55V 30A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 14.7mOhm @ 30A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 80µA
Supplier Device Package: PG-TO252-3-11
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1485 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IPD30N06S223ATMA1 IPD30N06S223ATMA1 Infineon Technologies Infineon-IPD30N06S2_23-DS-v01_00-en.pdf?folderId=db3a304412b407950112b4322c6d574b&fileId=db3a304412b407950112b433ba1b5d61&ack=t Description: MOSFET N-CH 55V 30A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 21A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: PG-TO252-3-11
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 901 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IPD30N06S2L-13 IPD30N06S2L-13 Infineon Technologies Infineon-IPD30N06S2L_13-DS-v01_00-en.pdf?folderId=db3a304412b407950112b4322c6d574b&fileId=db3a304412b407950112b433ba8d5d65&ack=t Description: MOSFET N-CH 55V 30A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 30A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 2V @ 80µA
Supplier Device Package: PG-TO252-3-11
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IPD30N06S2L23ATMA1 IPD30N06S2L23ATMA1 Infineon Technologies IPD30N06S2L-23_green.pdf?folderId=db3a304412b407950112b4322c6d574b&fileId=db3a304412b407950112b433bafe5d69 Description: MOSFET N-CH 55V 30A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 22A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 2V @ 50µA
Supplier Device Package: PG-TO252-3-11
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1091 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
IPD30N08S2L21ATMA1 IPD30N08S2L21ATMA1 Infineon Technologies Infineon-IPD30N08S2L_21-DS-v01_00-en.pdf?fileId=db3a304412b407950112b426f6a33b23&ack=t Description: MOSFET N-CH 75V 30A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 20.5mOhm @ 25A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 2V @ 80µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 17500 шт:
термін постачання 21-31 дні (днів)
2500+50.45 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
IPD30N10S3L34ATMA1 IPD30N10S3L34ATMA1 Infineon Technologies Infineon-IPD30N10S3L_34-DS-v01_01-en.pdf?fileId=db3a30431a5c32f2011a908963135956&ack=t Description: MOSFET N-CH 100V 30A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 31mOhm @ 30A, 10V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 29µA
Supplier Device Package: PG-TO252-3-11
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1976 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)
2500+41.26 грн
5000+37.95 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
IPD33CN10NGBUMA1 IPD33CN10NGBUMA1 Infineon Technologies IPP35CN10N_Rev1.07.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42b457b44b1 Description: MOSFET N-CH 100V 27A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 27A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 4V @ 29µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1570 pF @ 50 V
товару немає в наявності
В кошику  од. на суму  грн.
IPD35N10S3L26ATMA1 IPD35N10S3L26ATMA1 Infineon Technologies Infineon-IPP_B_I70N10S3L_12-DS-01_02-en.pdf?folderId=db3a3043156fd5730115c7d50620107c&fileId=db3a30431a5c32f2011a9085629c594b&ack=t Description: MOSFET N-CH 100V 35A TO252-31
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 35A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 39µA
Supplier Device Package: PG-TO252-3-11
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)
2500+46.67 грн
5000+44.06 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
IPD50N03S2L06ATMA1 IPD50N03S2L06ATMA1 Infineon Technologies Infineon-IPD50N03S2L_06-DS-v01_00-en.pdf?folderId=db3a304412b407950112b426f7da3b27&fileId=db3a304412b407950112b4270cfc3b6e&ack=t Description: MOSFET N-CH 30V 50A TO252-31
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 50A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 2V @ 85µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
IPD50N04S308ATMA1 IPD50N04S308ATMA1 Infineon Technologies Infineon-IPD50N04S3_08-DS-v01_00-en.pdf?folderId=db3a304412b407950112b42b75b74520&fileId=db3a304412b407950112b42ba8f445c6&ack=t Description: MOSFET N-CH 40V 50A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 50A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 4V @ 40µA
Supplier Device Package: PG-TO252-3-11
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
IPD50N06S214ATMA1 IPD50N06S214ATMA1 Infineon Technologies Infineon-IPD50N06S2_14-DS-v01_01-en.pdf?folderId=db3a304412b407950112b4322c6d574b&fileId=db3a304412b407950112b43351315b1a&ack=t Description: MOSFET N-CH 55V 50A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 14.4mOhm @ 32A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 80µA
Supplier Device Package: PG-TO252-3-11
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1485 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IPD50N06S2L13ATMA1 IPD50N06S2L13ATMA1 Infineon Technologies Infineon-IPD50N06S2L_13-DS-v01_00-en.pdf?folderId=db3a304412b407950112b4322c6d574b&fileId=db3a304412b407950112b433e8e55e1a&ack=t Description: MOSFET N-CH 55V 50A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 12.7mOhm @ 34A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 2V @ 80µA
Supplier Device Package: PG-TO252-3-11
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IPD50N10S3L16ATMA1 IPD50N10S3L16ATMA1 Infineon Technologies Infineon-IPD50N10S3L_16-DS-v01_02-en.pdf?folderId=db3a3043156fd5730115c7d50620107c&fileId=db3a30431a5c32f2011a908698d3594e&ack=t Description: MOSFET N-CH 100V 50A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 50A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 60µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4180 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
IPD50P03P4L11ATMA1 IPD50P03P4L11ATMA1 Infineon Technologies Infineon-IPD50P03P4L_11-DS-v01_01-en.pdf?folderId=db3a304314dca3890114ef902baa05f9&fileId=db3a30431ddc9372011e07ebbe0127e8&ack=t Description: MOSFET P-CH 30V 50A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 50A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 2V @ 85µA
Supplier Device Package: PG-TO252-3-11
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3770 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
IPD50R399CP IPD50R399CP Infineon Technologies IPD50R399CP.pdf Description: MOSFET N-CH 500V 9A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 399mOhm @ 4.9A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 330µA
Supplier Device Package: PG-TO252-3-11
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
IPD50R520CP IPD50R520CP Infineon Technologies IPD50R520CP.pdf Description: MOSFET N-CH 500V 7.1A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.1A (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 3.8A, 10V
Power Dissipation (Max): 66W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PG-TO252-3-11
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
IPD60R520CPBTMA1 IPD60R520CPBTMA1 Infineon Technologies IPD60R520CP.pdf Description: MOSFET N-CH 600V 6.8A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 3.8A, 10V
Power Dissipation (Max): 66W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
IPD60R600CPBTMA1 IPD60R600CPBTMA1 Infineon Technologies Infineon-IPD60R600CP-DS-v02_01-en.pdf?folderId=db3a3043163797a6011638933eda014b&fileId=db3a30432313ff5e012385657d1567e3 Description: MOSFET N-CH 600V 6.1A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.1A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.3A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 220µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
IPB80N06S2L09ATMA1 Infineon-IPP_B80N06S2L_09-DS-v01_00-en.pdf?folderId=db3a304412b407950112b426db703ad9&fileId=db3a304412b407950112b4333f475ad4&ack=t
IPB80N06S2L09ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 80A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 52A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 2V @ 125µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2620 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IPB80N06S2L11ATMA1 Infineon-IPP_B_I80N06S2L_11-DS-v01_01-en.pdf?folderId=db3a304412b407950112b426db703ad9&fileId=db3a304412b407950112b4333e375ac6&ack=t
IPB80N06S2L11ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 80A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 10.7mOhm @ 60A, 10V
Power Dissipation (Max): 158W (Tc)
Vgs(th) (Max) @ Id: 2V @ 93µA
Supplier Device Package: PG-TO263-3-2
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2075 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
IPB80N06S2L-H5 IPB%2CIPP80N06S2L-H5.pdf
IPB80N06S2L-H5
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 80A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IPB80N06S3-05 IP(B,I,P)80N06S3-05.pdf
IPB80N06S3-05
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 80A TO263-3
товару немає в наявності
В кошику  од. на суму  грн.
IPB80N08S2L07ATMA1 Infineon-IPP_B80N08S2L_07_GREEN-DS-v01_01-en.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b426e2333ae3&ack=t
IPB80N08S2L07ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 75V 80A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 233 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IPD031N06L3GATMA1 IPD031N06L3_Rev2.0.pdf?folderId=db3a30431441fb5d01148ca9f1be0e77&fileId=db3a30431ddc9372011e2a9f6a9d4d02
IPD031N06L3GATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 100A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 100A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 93µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 30 V
на замовлення 60000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+75.28 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
IPD034N06N3GATMA1 IPD034N06N3_Rev2.0.pdf?folderId=db3a30431441fb5d01148ca9f1be0e77&fileId=db3a30431ddc9372011e2a97343b4cf3
IPD034N06N3GATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 100A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 100A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 4V @ 93µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 30 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+51.76 грн
5000+49.65 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
IPD035N06L3GATMA1 IPD035N06L3_G.pdf
IPD035N06L3GATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 90A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 90A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 93µA
Supplier Device Package: PG-TO252-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 30 V
товару немає в наявності
В кошику  од. на суму  грн.
IPD036N04LGBTMA1 IPD036N04L_rev1.0.pdf?folderId=db3a3043163797a6011643468e7505a4&fileId=db3a3043163797a6011643476a6505a5
IPD036N04LGBTMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 90A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 90A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 2V @ 45µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 20 V
товару немає в наявності
В кошику  од. на суму  грн.
IPD038N04NGBTMA1 IPD038N04N_G.pdf
IPD038N04NGBTMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 90A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 90A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 4V @ 45µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 20 V
товару немає в наявності
В кошику  од. на суму  грн.
IPD038N06N3GATMA1 IPD038N06N3_Rev1.01.pdf?folderId=db3a3043132679fb0113346bdc4505a3&fileId=db3a304317a7483601181bf8dae11675
IPD038N06N3GATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 90A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 90A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 30 V
товару немає в наявності
В кошику  од. на суму  грн.
IPD042P03L3GBTMA1 Infineon-IPD042P03L3_G-DS-v02_02-en.pdf?fileId=db3a30431d8a6b3c011d90c8c6e60425
IPD042P03L3GBTMA1
Виробник: Infineon Technologies
Description: MOSFET P-CH 30V 70A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 70A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2V @ 270µA
Supplier Device Package: PG-TO252-3-11
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 175 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12400 pF @ 15 V
товару немає в наявності
В кошику  од. на суму  грн.
IPD048N06L3GBTMA1 IPD048N06L3_Rev2.0.pdf?folderId=db3a30431441fb5d01148ca9f1be0e77&fileId=db3a30431ddc9372011e2b4f496e4db0
IPD048N06L3GBTMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 90A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 90A, 10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 58µA
Supplier Device Package: PG-TO252-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 30 V
товару немає в наявності
В кошику  од. на суму  грн.
IPD053N06N3GBTMA1 IPD053N06N3_G.pdf
IPD053N06N3GBTMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 90A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 90A, 10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 4V @ 58µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 30 V
товару немає в наявності
В кошику  од. на суму  грн.
IPD053N08N3GBTMA1 Infineon-IPD053N08N3-DS-v01_01-en.pdf?fileId=db3a304317a748360117cf072cf31ce8
IPD053N08N3GBTMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 80V 90A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 90A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4750 pF @ 40 V
товару немає в наявності
В кошику  од. на суму  грн.
IPD068N10N3GBTMA1 IPD068N10N3+G_Rev2.1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30431ce5fb52011d1eb7aeb615d1
IPD068N10N3GBTMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 90A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 90A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4910 pF @ 50 V
товару немає в наявності
В кошику  од. на суму  грн.
IPD079N06L3GBTMA1 IPD079N06L3_Rev2.0.pdf?folderId=db3a30431441fb5d01148ca9f1be0e77&fileId=db3a30431ddc9372011e2b5528634dc0
IPD079N06L3GBTMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 50A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 50A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 34µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 30 V
товару немає в наявності
В кошику  од. на суму  грн.
IPD088N04LGBTMA1 IPD088N04L_G.pdf
IPD088N04LGBTMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 50A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 50A, 10V
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 2V @ 16µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 20 V
товару немає в наявності
В кошику  од. на суму  грн.
IPD088N06N3GBTMA1 IPD088N06N3_Rev2.0.pdf?folderId=db3a30431441fb5d01148ca9f1be0e77&fileId=db3a30431ddc9372011e2b2351db4d5c
IPD088N06N3GBTMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 50A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 50A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 4V @ 34µA
Supplier Device Package: PG-TO252-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 30 V
товару немає в наявності
В кошику  од. на суму  грн.
IPD096N08N3GBTMA1 Infineon-IPD096N08N3-DS-v02_02-en.pdf?fileId=db3a30431ce5fb52011d1f35150315fe
IPD096N08N3GBTMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 80V 73A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 46A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 46µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 40 V
товару немає в наявності
В кошику  од. на суму  грн.
IPD105N04LGBTMA1 IPD105N04L_G.pdf
IPD105N04LGBTMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 40A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 40A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 2V @ 14µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 20 V
товару немає в наявності
В кошику  од. на суму  грн.
IPD12CN10NGBUMA1 IPP12CN10N_Rev1.05.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42c236e467c
IPD12CN10NGBUMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 67A TO252-3
товару немає в наявності
В кошику  од. на суму  грн.
IPD12CNE8N G IPx12CNE8N_Rev1.06.pdf
IPD12CNE8N G
Виробник: Infineon Technologies
Description: MOSFET N-CH 85V 67A TO252-3
товару немає в наявності
В кошику  од. на суму  грн.
IPD135N08N3GBTMA1 Infineon-IPD135N08N3-DS-v02_02-en.pdf?fileId=db3a30431add1d95011ae8b1143256d4
IPD135N08N3GBTMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 80V 45A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 45A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 33µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1730 pF @ 40 V
товару немає в наявності
В кошику  од. на суму  грн.
IPD14N06S280ATMA1 Infineon-IPD14N06S2_80-DS-v01_00-en.pdf?folderId=db3a304412b407950112b4322c6d574b&fileId=db3a304412b407950112b43349c95af6&ack=t
IPD14N06S280ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 17A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 7A, 10V
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 4V @ 14µA
Supplier Device Package: PG-TO252-3-11
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 293 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IPD15N06S2L64ATMA1 Infineon-IPD15N06S2L_64-DS-v01_00-en.pdf?folderId=db3a304412b407950112b4322c6d574b&fileId=db3a304412b407950112b4334ab35afe&ack=t
IPD15N06S2L64ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 19A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 64mOhm @ 13A, 10V
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 2V @ 14µA
Supplier Device Package: PG-TO252-3-11
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 354 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
IPD160N04LGBTMA1 IPD160N04L_G.pdf
IPD160N04LGBTMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 30A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 30A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 2V @ 10µA
Supplier Device Package: PG-TO252-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 20 V
товару немає в наявності
В кошику  од. на суму  грн.
IPD16CN10N G Infineon-IPP16CN10N-DS-v01_06-en.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432313ff5e012393cd8f170432
IPD16CN10N G
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 53A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 53A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 4V @ 61µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3220 pF @ 50 V
товару немає в наявності
В кошику  од. на суму  грн.
IPD16CNE8N G IP(B,D,I,P)16CNE8N_G.pdf
IPD16CNE8N G
Виробник: Infineon Technologies
Description: MOSFET N-CH 85V 53A TO252-3
товару немає в наявності
В кошику  од. на суму  грн.
IPD170N04NGBTMA1 IPD170N04N_G.pdf
IPD170N04NGBTMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 30A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 30A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 4V @ 10µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 20 V
товару немає в наявності
В кошику  од. на суму  грн.
IPD200N15N3GBTMA1 Infineon-IPD_BIP_200N15N3-DS-v02_07-en.pdf?fileId=db3a304319c6f18c0119cd1cc23279be
IPD200N15N3GBTMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 150V 50A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 50A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TO252-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1820 pF @ 75 V
товару немає в наявності
В кошику  од. на суму  грн.
IPD220N06L3GBTMA1 IPD220N06L3_Rev2.0.pdf?folderId=db3a30431441fb5d01148ca9f1be0e77&fileId=db3a30431ddc9372011e266fb35e471a
IPD220N06L3GBTMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 30A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 30A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 11µA
Supplier Device Package: PG-TO252-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 30 V
товару немає в наявності
В кошику  од. на суму  грн.
IPD22N08S2L50ATMA1 Infineon-IPD22N08S2L_50-DS-v01_00-en.pdf?folderId=db3a304412b407950112b426dbff3ada&fileId=db3a304412b407950112b426ee5f3b08&ack=t
IPD22N08S2L50ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 75V 27A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 50A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2V @ 31µA
Supplier Device Package: PG-TO252-3-11
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 25 V
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+42.86 грн
5000+39.84 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
IPD250N06N3GBTMA1 IPD250N06N3_G.pdf
IPD250N06N3GBTMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 28A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 28A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 4V @ 11µA
Supplier Device Package: PG-TO252-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 30 V
товару немає в наявності
В кошику  од. на суму  грн.
IPD25CN10NGBUMA1 Infineon-IPP26CN10N-DS-v01_09-en.pdf?fileId=db3a304412b407950112b42b420244aa
IPD25CN10NGBUMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 35A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 35A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 4V @ 39µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2070 pF @ 50 V
товару немає в наявності
В кошику  од. на суму  грн.
IPD25CNE8N G IP(B,D,I,P,U)26CNE8N_G.pdf
IPD25CNE8N G
Виробник: Infineon Technologies
Description: MOSFET N-CH 85V 35A TO252-3
товару немає в наявності
В кошику  од. на суму  грн.
IPD25N06S240ATMA1 Infineon-IPD25N06S2_40-DS-v01_00-en.pdf?folderId=db3a304412b407950112b4322c6d574b&fileId=db3a304412b407950112b433b9ae5d5d&ack=t
IPD25N06S240ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 29A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 13A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 4V @ 26µA
Supplier Device Package: PG-TO252-3-11
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 513 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IPD26N06S2L35ATMA1 Infineon-IPD26N06S2L_35-DS-v01_00-en.pdf?folderId=db3a304412b407950112b4322c6d574b&fileId=db3a304412b407950112b43351ff5b22&ack=t
IPD26N06S2L35ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 30A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 13A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2V @ 26µA
Supplier Device Package: PG-TO252-3-11
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 621 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IPD30N03S2L07ATMA1 IPD30N03S2L-07_green.pdf?folderId=db3a304412b407950112b426f7da3b27&fileId=db3a304412b407950112b427067d3b58
IPD30N03S2L07ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 30A TO252-3
товару немає в наявності
В кошику  од. на суму  грн.
IPD30N03S2L20ATMA1 Infineon-IPD30N03S2L_20-DS-v01_00-en.pdf?folderId=db3a304412b407950112b426f7da3b27&fileId=db3a304412b407950112b4270c9e3b6a&ack=t
IPD30N03S2L20ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 30A TO252-31
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 18A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 2V @ 23µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IPD30N03S4L09ATMA1 Infineon-IPD30N03S4L_09-DS-v01_01-en.pdf?folderId=db3a304412b407950112b426db703ad9&fileId=db3a30431ddc9372011e2b2ed46c4d6b&ack=t
IPD30N03S4L09ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 30A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 30A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 13µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1520 pF @ 15 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 15
Grade: Automotive
Qualification: AEC-Q101
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+21.81 грн
5000+19.38 грн
7500+18.56 грн
12500+16.88 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
IPD30N03S4L14ATMA1 Infineon-IPD30N03S4L_14-DS-v02_01-en.pdf?folderId=db3a304412b407950112b426f7da3b27&fileId=db3a304412b407950112b426f9b13b2c&ack=t
IPD30N03S4L14ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 30A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 13.6mOhm @ 30A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 10µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 980 pF @ 25 V
на замовлення 12500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+20.63 грн
5000+18.30 грн
7500+17.51 грн
12500+15.67 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
IPD30N06S2-15 IPD30N06S2-15_green.pdf?folderId=db3a304412b407950112b4322c6d574b&fileId=db3a304412b407950112b433e70a5e0a
IPD30N06S2-15
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 30A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 14.7mOhm @ 30A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 80µA
Supplier Device Package: PG-TO252-3-11
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1485 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IPD30N06S223ATMA1 Infineon-IPD30N06S2_23-DS-v01_00-en.pdf?folderId=db3a304412b407950112b4322c6d574b&fileId=db3a304412b407950112b433ba1b5d61&ack=t
IPD30N06S223ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 30A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 21A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: PG-TO252-3-11
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 901 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IPD30N06S2L-13 Infineon-IPD30N06S2L_13-DS-v01_00-en.pdf?folderId=db3a304412b407950112b4322c6d574b&fileId=db3a304412b407950112b433ba8d5d65&ack=t
IPD30N06S2L-13
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 30A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 30A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 2V @ 80µA
Supplier Device Package: PG-TO252-3-11
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IPD30N06S2L23ATMA1 IPD30N06S2L-23_green.pdf?folderId=db3a304412b407950112b4322c6d574b&fileId=db3a304412b407950112b433bafe5d69
IPD30N06S2L23ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 30A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 22A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 2V @ 50µA
Supplier Device Package: PG-TO252-3-11
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1091 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
IPD30N08S2L21ATMA1 Infineon-IPD30N08S2L_21-DS-v01_00-en.pdf?fileId=db3a304412b407950112b426f6a33b23&ack=t
IPD30N08S2L21ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 75V 30A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 20.5mOhm @ 25A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 2V @ 80µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 17500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+50.45 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
IPD30N10S3L34ATMA1 Infineon-IPD30N10S3L_34-DS-v01_01-en.pdf?fileId=db3a30431a5c32f2011a908963135956&ack=t
IPD30N10S3L34ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 30A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 31mOhm @ 30A, 10V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 29µA
Supplier Device Package: PG-TO252-3-11
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1976 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+41.26 грн
5000+37.95 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
IPD33CN10NGBUMA1 IPP35CN10N_Rev1.07.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42b457b44b1
IPD33CN10NGBUMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 27A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 27A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 4V @ 29µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1570 pF @ 50 V
товару немає в наявності
В кошику  од. на суму  грн.
IPD35N10S3L26ATMA1 Infineon-IPP_B_I70N10S3L_12-DS-01_02-en.pdf?folderId=db3a3043156fd5730115c7d50620107c&fileId=db3a30431a5c32f2011a9085629c594b&ack=t
IPD35N10S3L26ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 35A TO252-31
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 35A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 39µA
Supplier Device Package: PG-TO252-3-11
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+46.67 грн
5000+44.06 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
IPD50N03S2L06ATMA1 Infineon-IPD50N03S2L_06-DS-v01_00-en.pdf?folderId=db3a304412b407950112b426f7da3b27&fileId=db3a304412b407950112b4270cfc3b6e&ack=t
IPD50N03S2L06ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 50A TO252-31
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 50A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 2V @ 85µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
IPD50N04S308ATMA1 Infineon-IPD50N04S3_08-DS-v01_00-en.pdf?folderId=db3a304412b407950112b42b75b74520&fileId=db3a304412b407950112b42ba8f445c6&ack=t
IPD50N04S308ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 50A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 50A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 4V @ 40µA
Supplier Device Package: PG-TO252-3-11
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
IPD50N06S214ATMA1 Infineon-IPD50N06S2_14-DS-v01_01-en.pdf?folderId=db3a304412b407950112b4322c6d574b&fileId=db3a304412b407950112b43351315b1a&ack=t
IPD50N06S214ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 50A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 14.4mOhm @ 32A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 80µA
Supplier Device Package: PG-TO252-3-11
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1485 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IPD50N06S2L13ATMA1 Infineon-IPD50N06S2L_13-DS-v01_00-en.pdf?folderId=db3a304412b407950112b4322c6d574b&fileId=db3a304412b407950112b433e8e55e1a&ack=t
IPD50N06S2L13ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 50A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 12.7mOhm @ 34A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 2V @ 80µA
Supplier Device Package: PG-TO252-3-11
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IPD50N10S3L16ATMA1 Infineon-IPD50N10S3L_16-DS-v01_02-en.pdf?folderId=db3a3043156fd5730115c7d50620107c&fileId=db3a30431a5c32f2011a908698d3594e&ack=t
IPD50N10S3L16ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 50A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 50A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 60µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4180 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
IPD50P03P4L11ATMA1 Infineon-IPD50P03P4L_11-DS-v01_01-en.pdf?folderId=db3a304314dca3890114ef902baa05f9&fileId=db3a30431ddc9372011e07ebbe0127e8&ack=t
IPD50P03P4L11ATMA1
Виробник: Infineon Technologies
Description: MOSFET P-CH 30V 50A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 50A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 2V @ 85µA
Supplier Device Package: PG-TO252-3-11
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3770 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
IPD50R399CP IPD50R399CP.pdf
IPD50R399CP
Виробник: Infineon Technologies
Description: MOSFET N-CH 500V 9A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 399mOhm @ 4.9A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 330µA
Supplier Device Package: PG-TO252-3-11
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
IPD50R520CP IPD50R520CP.pdf
IPD50R520CP
Виробник: Infineon Technologies
Description: MOSFET N-CH 500V 7.1A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.1A (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 3.8A, 10V
Power Dissipation (Max): 66W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PG-TO252-3-11
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
IPD60R520CPBTMA1 IPD60R520CP.pdf
IPD60R520CPBTMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 6.8A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 3.8A, 10V
Power Dissipation (Max): 66W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
IPD60R600CPBTMA1 Infineon-IPD60R600CP-DS-v02_01-en.pdf?folderId=db3a3043163797a6011638933eda014b&fileId=db3a30432313ff5e012385657d1567e3
IPD60R600CPBTMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 6.1A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.1A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.3A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 220µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
Обрати Сторінку:   [  << Попередня Сторінка ]  1 129 130 131 132 133 134 135 136 137 138 139 247 494 741 988 1235 1482 1729 1976 2223 2470 2478  [ Наступна Сторінка >> ]