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IRFH5302DTRPBF IRFH5302DTRPBF INFINEON TECHNOLOGIES irfh5302dpbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 29A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 29A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
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IRFH5302TRPBF IRFH5302TRPBF INFINEON TECHNOLOGIES irfh5302pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 32A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 32A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
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IRFR4510TRPBF INFINEON TECHNOLOGIES irfr4510pbf.pdf?fileId=5546d462533600a40153563228bc20f1 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 45A; Idm: 252A; 143W; DPAK
Type of transistor: N-MOSFET
Power dissipation: 143W
Polarisation: unipolar
Case: DPAK
Mounting: SMD
Technology: HEXFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: 100V
Pulsed drain current: 252A
Drain current: 45A
On-state resistance: 13.9mΩ
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FZ600R12KE3HOSA1 FZ600R12KE3HOSA1 INFINEON TECHNOLOGIES FZ600R12KE3.pdf Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 600A; AG-62MM
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM
Electrical mounting: screw
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 600A
Pulsed collector current: 1.2kA
Power dissipation: 2.8kW
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FZ400R12KS4HOSA1 INFINEON TECHNOLOGIES FZ400R12KS4.pdf Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 400A; AG-62MM
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM
Electrical mounting: screw
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 400A
Pulsed collector current: 800A
Power dissipation: 2.5kW
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FF450R12KT4HOSA1 INFINEON TECHNOLOGIES FF450R12KT4.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Topology: IGBT half-bridge
Gate-emitter voltage: ±20V
Collector current: 450A
Pulsed collector current: 900A
Power dissipation: 2.4kW
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FF450R12KE4HOSA1 INFINEON TECHNOLOGIES FF450R12KE4-DTE.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM
Electrical mounting: screw
Mechanical mounting: screw
Topology: IGBT half-bridge
Gate-emitter voltage: ±20V
Collector current: 450A
Pulsed collector current: 900A
Power dissipation: 2.4kW
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FZ900R12KE4HOSA1 INFINEON TECHNOLOGIES FZ900R12KE4.pdf Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 900A; AG-62MMES
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Case: AG-62MMES
Electrical mounting: screw
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 900A
Pulsed collector current: 1.8kA
Power dissipation: 4.3kW
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DF400R12KE3HOSA1 DF400R12KE3HOSA1 INFINEON TECHNOLOGIES DF400R12KE3.pdf Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; screw
Type of module: IGBT
Semiconductor structure: diode/transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM-1
Electrical mounting: screw
Mechanical mounting: screw
Topology: buck chopper
Gate-emitter voltage: ±20V
Collector current: 400A
Pulsed collector current: 800A
Power dissipation: 2kW
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FF200R12KE3HOSA1 FF200R12KE3HOSA1 INFINEON TECHNOLOGIES FF200R12KE3.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM-1
Electrical mounting: screw
Mechanical mounting: screw
Topology: IGBT half-bridge
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Power dissipation: 1.05kW
на замовлення 10 шт:
термін постачання 21-30 дні (днів)
1+9114.70 грн
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TT260N22KOFHOSA1 TT260N22KOFHOSA1 INFINEON TECHNOLOGIES TT260N22KOF.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 260A; BG-PB50AT-1; screw
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 260A
Case: BG-PB50AT-1
Max. forward voltage: 1.45V
Max. forward impulse current: 8kA
Gate current: 200mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
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FF200R12KT3EHOSA1 FF200R12KT3EHOSA1 INFINEON TECHNOLOGIES FF200R12KT3E.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common emitter; IGBT x2
Type of module: IGBT
Semiconductor structure: common emitter; transistor/transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM-1
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Topology: IGBT x2
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Power dissipation: 1.05kW
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FF300R12KT3EHOSA1 FF300R12KT3EHOSA1 INFINEON TECHNOLOGIES FF300R12KT3E.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common emitter; IGBT x2
Type of module: IGBT
Semiconductor structure: common emitter; transistor/transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM-1
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Topology: IGBT x2
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Power dissipation: 1.45kW
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FF200R12KE4PHOSA1 FF200R12KE4PHOSA1 INFINEON TECHNOLOGIES FF200R12KE4P.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 200A
Case: AG-62MM-1
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 400A
Mechanical mounting: screw
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TLE9250SJXUMA1 TLE9250SJXUMA1 INFINEON TECHNOLOGIES TLE9250.pdf Category: CAN interfaces - integrated circuits
Description: IC: interface; transceiver; 4.5÷5.5VDC; PG-DSO-8; -40÷150°C; 60mA
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Supply voltage: 4.5...5.5V DC
Case: PG-DSO-8
Interface: CAN-FD
Mounting: SMD
Operating temperature: -40...150°C
Number of receivers: 1
Number of transmitters: 1
Kind of package: reel; tape
DC supply current: 60mA
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TLE9250VSJXUMA1 TLE9250VSJXUMA1 INFINEON TECHNOLOGIES TLE9250V.pdf Category: CAN interfaces - integrated circuits
Description: IC: interface; transceiver; 3÷5.5VDC,4.5÷5.5VDC; PG-DSO-8; 60mA
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Supply voltage: 3...5.5V DC; 4.5...5.5V DC
Case: PG-DSO-8
Interface: CAN-FD
Mounting: SMD
Operating temperature: -40...150°C
Number of receivers: 1
Number of transmitters: 1
Kind of package: reel; tape
DC supply current: 60mA
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TLE9250XSJXUMA1 TLE9250XSJXUMA1 INFINEON TECHNOLOGIES TLE9250X.pdf Category: CAN interfaces - integrated circuits
Description: IC: interface; transceiver; 3÷5.5VDC,4.5÷5.5VDC; PG-DSO-8; 60mA
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Supply voltage: 3...5.5V DC; 4.5...5.5V DC
Case: PG-DSO-8
Interface: CAN-FD
Mounting: SMD
Operating temperature: -40...150°C
Number of receivers: 1
Number of transmitters: 1
Kind of package: reel; tape
DC supply current: 60mA
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FP100R12KT4B11BOSA1 INFINEON TECHNOLOGIES Infineon-FP100R12KT4_B11-DS-v03_00-en_de.pdf?fileId=db3a3043156fd57301161a6b3faf1e18 Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; 515W
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 100A
Case: AG-ECONO3-3
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: EconoPIM™ 3
Mechanical mounting: screw
Power dissipation: 515W
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IRF6215STRLPBF IRF6215STRLPBF INFINEON TECHNOLOGIES irf6215spbf.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -13A; 110W; D2PAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -13A
Power dissipation: 110W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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BTS134D BTS134D INFINEON TECHNOLOGIES BTS134D.pdf Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 3.5A; Ch: 1; N-Channel; SMD; TO252-3
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 3.5A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO252-3
On-state resistance: 35mΩ
Technology: HITFET®
Output voltage: 42V
на замовлення 1005 шт:
термін постачання 21-30 дні (днів)
2+226.41 грн
10+138.37 грн
11+88.68 грн
28+83.33 грн
1000+80.27 грн
Мінімальне замовлення: 2
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CY62157EV30LL-45BVXAT INFINEON TECHNOLOGIES Infineon-CY62157EV30_MoBL_8-Mbit_(512_K_16)_Static_RAM-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe669131ef&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files&redirId=File_4_0 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 45ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 45ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 2.2...3.6V DC
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CY62157EV30LL-45ZSXAT INFINEON TECHNOLOGIES Infineon-CY62157EV30_MoBL_8-Mbit_(512_K_16)_Static_RAM-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe669131ef&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files&redirId=File_4_0 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 45ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 45ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 2.2...3.6V DC
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BTS724G BTS724G INFINEON TECHNOLOGIES BTS724G.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3.3÷7.3A; Ch: 4; N-Channel; SMD; SO20
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Mounting: SMD
Output current: 3.3...7.3A
Case: SO20
Supply voltage: 5.5...40V DC
On-state resistance: 22.5mΩ
Number of channels: 4
Kind of output: N-Channel
Technology: Classic PROFET
на замовлення 602 шт:
термін постачання 21-30 дні (днів)
1+479.16 грн
4+227.82 грн
11+215.59 грн
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IRFR3410TRPBF IRFR3410TRPBF INFINEON TECHNOLOGIES irfr3410pbf.pdf description Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 31A; 110W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 31A
Power dissipation: 110W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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BTS3050TF BTS3050TF INFINEON TECHNOLOGIES BTS3050TF.pdf Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 4A; Ch: 1; N-Channel; SMD; PG-TO252-3
Mounting: SMD
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
Technology: HITFET®
Kind of integrated circuit: low-side
Operating temperature: -40...150°C
Case: PG-TO252-3
On-state resistance: 0.1Ω
Turn-on time: 115µs
Turn-off time: 210µs
Output voltage: 40V
Output current: 4A
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BSC014N04LSIATMA1 BSC014N04LSIATMA1 INFINEON TECHNOLOGIES BSC014N04LSI-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 96W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 96W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Kind of channel: enhancement
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IPP037N06L3GXKSA1 IPP037N06L3GXKSA1 INFINEON TECHNOLOGIES IPP037N06L3G-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 90A; 167W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 90A
Power dissipation: 167W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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BSZ034N04LSATMA1 BSZ034N04LSATMA1 INFINEON TECHNOLOGIES BSZ034N04LS-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 52W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 40A
Power dissipation: 52W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 3.4mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™
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BCV61BE6327 BCV61BE6327 INFINEON TECHNOLOGIES BCV61BE6327-DTE.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 30V; 0.1A; 0.3W; SOT143
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SOT143
Mounting: SMD
Frequency: 250MHz
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IRSM836-024MATR IRSM836-024MATR INFINEON TECHNOLOGIES IRSM836-024MATR.pdf Category: Motor and PWM drivers
Description: IC: driver; MOSFET three-phase bridge; iMOTION™; PQFN12X12; 2A
Type of integrated circuit: driver
Topology: MOSFET three-phase bridge
Kind of integrated circuit: 3-phase motor controller; IPM
Case: PQFN12X12
Output current: 2A
Mounting: SMD
Operating temperature: -40...150°C
Power dissipation: 16W
Integrated circuit features: charge pump; dead time; fault detection; integrated bootstrap functionality
Protection: anti-overload OPP; undervoltage UVP
Technology: iMOTION™
Operating voltage: 11.5...18.5/8.9...200V DC
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AUIRGSL4062D1 AUIRGSL4062D1 INFINEON TECHNOLOGIES AUIRGx4062D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; Trench; 600V; 39A; 123W; TO262
Case: TO262
Mounting: THT
Kind of package: tube
Type of transistor: IGBT
Pulsed collector current: 72A
Collector current: 39A
Collector-emitter voltage: 600V
Power dissipation: 123W
Gate charge: 77nC
Technology: Trench
Gate-emitter voltage: ±20V
Turn-on time: 35ns
Turn-off time: 176ns
на замовлення 9 шт:
термін постачання 21-30 дні (днів)
2+339.20 грн
3+294.33 грн
4+285.15 грн
9+269.86 грн
Мінімальне замовлення: 2
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IRGSL4062DPBF IRGSL4062DPBF INFINEON TECHNOLOGIES irgs4062dpbf.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 48A; 250W; TO262
Case: TO262
Mounting: THT
Kind of package: tube
Type of transistor: IGBT
Collector current: 48A
Collector-emitter voltage: 600V
Power dissipation: 250W
Features of semiconductor devices: integrated anti-parallel diode
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IRF6216TRPBF IRF6216TRPBF INFINEON TECHNOLOGIES irf6216pbf.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -2.2A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -2.2A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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BCX6925H6327XTSA1 BCX6925H6327XTSA1 INFINEON TECHNOLOGIES BCX69.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 20V; 1A; 3W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 1A
Power dissipation: 3W
Case: SOT89
Mounting: SMD
Frequency: 100MHz
на замовлення 7 шт:
термін постачання 21-30 дні (днів)
7+58.45 грн
Мінімальне замовлення: 7
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BCX6816H6327XTSA1 BCX6816H6327XTSA1 INFINEON TECHNOLOGIES BCX68.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 20V; 1A; 3W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 1A
Power dissipation: 3W
Case: SOT89
Mounting: SMD
Frequency: 100MHz
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BTS3134D BTS3134D INFINEON TECHNOLOGIES BTS3134D.pdf Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 3.5A; Ch: 1; N-Channel; SMD; TO252-3
Number of channels: 1
Kind of output: N-Channel
Technology: HITFET®
Kind of integrated circuit: low-side
Mounting: SMD
Case: TO252-3
Output voltage: 42V
Output current: 3.5A
Type of integrated circuit: power switch
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IPB60R180C7ATMA1 IPB60R180C7ATMA1 INFINEON TECHNOLOGIES IPB60R180C7.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; 68W; D2PAK
Type of transistor: N-MOSFET
Technology: CoolMOS™ C7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Power dissipation: 68W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 24nC
Kind of channel: enhancement
на замовлення 950 шт:
термін постачання 21-30 дні (днів)
3+179.48 грн
9+105.50 грн
24+99.38 грн
500+95.56 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IDW100E60FKSA1 IDW100E60FKSA1 INFINEON TECHNOLOGIES IDW100E60FKSA1.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 100A; tube; TO247-3
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 100A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Case: TO247-3
на замовлення 60 шт:
термін постачання 21-30 дні (днів)
2+274.16 грн
7+134.55 грн
19+127.67 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
XMC DIGITAL POWER EXPLORER KIT INFINEON TECHNOLOGIES Category: Development kits - others
Description: Dev.kit: ARM Infineon; XMC1300,XMC4200; Add-on connectors: 1
Type of development kit: ARM Infineon
Family: XMC1300; XMC4200
Kit contents: base board with buck converter; board with XMC1300 microcontroller; board with XMC4200 microcontroller
Components: BSC0924ND; IRS2011S; XMC1300; XMC4200
Interface: CAN x2; Ethernet; GPIO; I2C; I2S; LIN; PWM; SPI; UART; USB; USIC x2
Kind of connector: pin strips; USB B micro
Number of add-on connectors: 1
Kind of architecture: Cortex M4; Cortex M0
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IRFSL7430PBF IRFSL7430PBF INFINEON TECHNOLOGIES IRFSL7430PBF.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 301A; 375W; TO262
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 301A
Power dissipation: 375W
Case: TO262
Gate-source voltage: ±20V
On-state resistance: 1.2mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 300nC
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IFX007TAUMA1
+1
 		IFX007TAUMA1 INFINEON TECHNOLOGIES IFX007T.pdf Category: Motor and PWM drivers
Description: IC: driver; MOSFET half-bridge; IMC,motor controller; PG-TO263-7
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: IMC; motor controller
Case: PG-TO263-7
Mounting: SMD
Operating temperature: -40...150°C
Number of channels: 1
Kind of package: reel; tape
Technology: NovalithIC™
On-state resistance: 10mΩ
Operating voltage: 5.5...40V DC
на замовлення 773 шт:
термін постачання 21-30 дні (днів)
2+242.05 грн
5+201.82 грн
6+154.43 грн
17+146.02 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
BCR141E6327 BCR141E6327 INFINEON TECHNOLOGIES BCR141.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.25W; SOT23; R1: 22kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT23
Mounting: SMD
Frequency: 130MHz
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
на замовлення 5140 шт:
термін постачання 21-30 дні (днів)
17+24.70 грн
23+16.82 грн
38+10.31 грн
100+8.72 грн
250+6.00 грн
325+2.75 грн
894+2.60 грн
Мінімальне замовлення: 17
В кошику  од. на суму  грн.
IPP048N12N3GXKSA1 IPP048N12N3GXKSA1 INFINEON TECHNOLOGIES IPP048N12N3G-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 120A; 300W; PG-TO220-3
Mounting: THT
Case: PG-TO220-3
Drain-source voltage: 120V
Drain current: 120A
On-state resistance: 4.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Kind of package: tube
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
на замовлення 113 шт:
термін постачання 21-30 дні (днів)
2+338.37 грн
7+142.96 грн
18+135.31 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
BSC054N04NSGATMA1 BSC054N04NSGATMA1 INFINEON TECHNOLOGIES BSC054N04NSG-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 81A; 57W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 81A
Power dissipation: 57W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 5.4mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
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BSB014N04LX3GXUMA1 BSB014N04LX3GXUMA1 INFINEON TECHNOLOGIES BSB014N04LX3G-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 89W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 180A
Power dissipation: 89W
Case: CanPAK™ MX; MG-WDSON-2
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™
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BSC014N04LSATMA1 BSC014N04LSATMA1 INFINEON TECHNOLOGIES BSC014N04LS-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 96W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 96W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Kind of channel: enhancement
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IRLTS6342TRPBF IRLTS6342TRPBF INFINEON TECHNOLOGIES irlts6342pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8.3A; 2W; TSOP6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8.3A
Power dissipation: 2W
Case: TSOP6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Technology: HEXFET®
на замовлення 723 шт:
термін постачання 21-30 дні (днів)
12+37.05 грн
17+23.62 грн
25+19.72 грн
50+17.12 грн
61+15.14 грн
100+14.91 грн
167+14.30 грн
250+13.91 грн
Мінімальне замовлення: 12
В кошику  од. на суму  грн.
DDB6U205N16LHOSA1 DDB6U205N16LHOSA1 INFINEON TECHNOLOGIES DDB6U205N16LHOSA1.pdf Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 205A; screw
Case: AG-ISOPACK
Electrical mounting: screw
Version: module
Type of bridge rectifier: three-phase
Leads: M5 screws
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.47V
Load current: 205A
Max. forward impulse current: 1.375kA
на замовлення 2 шт:
термін постачання 21-30 дні (днів)
1+16054.26 грн
В кошику  од. на суму  грн.
ITS4141NHUMA1 ITS4141NHUMA1 INFINEON TECHNOLOGIES ITS4141N.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 700mA; Ch: 1; N-Channel; SMD; SOT223
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.7A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223
On-state resistance: 0.2Ω
Kind of package: reel; tape
Supply voltage: 12...45V DC
Turn-off time: 0.1ms
Power dissipation: 1.4W
Technology: Industrial PROFET
Turn-on time: 150µs
Operating temperature: -30...85°C
на замовлення 3136 шт:
термін постачання 21-30 дні (днів)
4+125.14 грн
10+78.74 грн
13+71.86 грн
35+68.04 грн
250+65.75 грн
500+64.98 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
SPD15P10PLGBTMA1 SPD15P10PLGBTMA1 INFINEON TECHNOLOGIES SPD15P10PLGBTMA1-DTE.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -15A; 128W; PG-TO252-3
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -15A
Power dissipation: 128W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: SMD
Kind of channel: enhancement
на замовлення 2194 шт:
термін постачання 21-30 дні (днів)
4+135.02 грн
10+94.80 грн
12+76.45 грн
33+71.86 грн
250+69.57 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
SPD09P06PLGBTMA1 SPD09P06PLGBTMA1 INFINEON TECHNOLOGIES SPD09P06PLGBTMA1-DTE.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -9.7A; 42W; PG-TO252-3
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -9.7A
Power dissipation: 42W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.25Ω
Mounting: SMD
Kind of channel: enhancement
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SPD18P06PGBTMA1 SPD18P06PGBTMA1 INFINEON TECHNOLOGIES SPD18P06PGBTMA1-DTE.PDF Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -18.6A; 80W; PG-TO252-3
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -18.6A
Power dissipation: 80W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: SMD
Kind of channel: enhancement
на замовлення 2429 шт:
термін постачання 21-30 дні (днів)
6+80.68 грн
10+68.80 грн
18+54.28 грн
48+51.22 грн
1000+49.69 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
BTS3405G BTS3405G INFINEON TECHNOLOGIES BTS3405G.pdf Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 350mA; Ch: 2; N-Channel; SMD; HITFET®
Output voltage: 10V
Output current: 0.35A
Type of integrated circuit: power switch
Number of channels: 2
Kind of output: N-Channel
Technology: HITFET®
Kind of integrated circuit: low-side
Mounting: SMD
Case: PG-DSO-8-25
On-state resistance: 0.35Ω
на замовлення 2209 шт:
термін постачання 21-30 дні (днів)
3+167.95 грн
10+100.15 грн
11+81.80 грн
30+77.98 грн
100+74.92 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IRL2910STRLPBF IRL2910STRLPBF INFINEON TECHNOLOGIES irl2910spbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 55A; 3.8W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 55A
Power dissipation: 3.8W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
Technology: HEXFET®
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BAT1704E6327HTSA1 BAT1704E6327HTSA1 INFINEON TECHNOLOGIES BAT1704E6327HTSA1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 4V; 0.13A; 150mW
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 4V
Load current: 0.13A
Semiconductor structure: double series
Power dissipation: 0.15W
на замовлення 2126 шт:
термін постачання 21-30 дні (днів)
23+18.11 грн
30+12.77 грн
100+8.10 грн
137+6.50 грн
376+6.19 грн
650+6.12 грн
1000+5.96 грн
Мінімальне замовлення: 23
В кошику  од. на суму  грн.
XMC4108Q48K64ABXUMA1 XMC4108Q48K64ABXUMA1 INFINEON TECHNOLOGIES XMC4100-4200-DTE.pdf Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-48; 20kBSRAM,64kBFLASH; 3.3VDC
Operating temperature: -40...125°C
Case: PG-VQFN-48
Supply voltage: 3.3V DC
Type of integrated circuit: ARM microcontroller
Interface: CAN; GPIO; I2C; I2S; LIN; SPI; UART; USB
Number of inputs/outputs: 21
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Number of A/D channels: 8
Kind of architecture: Cortex M4
Family: XMC4100
Memory: 20kB SRAM; 64kB FLASH
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BCM856SH6327 BCM856SH6327 INFINEON TECHNOLOGIES BCM856SH6327.pdf Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 65V; 0.1A; 0.25W; SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT363
Mounting: SMD
Frequency: 250MHz
на замовлення 1835 шт:
термін постачання 21-30 дні (днів)
30+14.65 грн
45+9.48 грн
100+7.64 грн
130+7.11 грн
355+6.73 грн
500+6.57 грн
Мінімальне замовлення: 30
В кошику  од. на суму  грн.
BSS83PH6327XTSA1 BSS83PH6327XTSA1 INFINEON TECHNOLOGIES BSS83PH6327XTSA1-dte.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.33A; 0.36W; PG-SOT23
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -330mA
Power dissipation: 0.36W
Case: PG-SOT23
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IMW120R350M1HXKSA1 INFINEON TECHNOLOGIES Infineon-IMW120R350M1H-DS-v01_01-EN.pdf?fileId=5546d46269e1c019016a92fe1a0a66a3 Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 4.7A; Idm: 13A; 30W
Type of transistor: N-MOSFET
Technology: CoolSiC™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 4.7A
Pulsed drain current: 13A
Power dissipation: 30W
Case: TO247
Gate-source voltage: -7...23V
On-state resistance: 662mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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IPP015N04NGXKSA1 IPP015N04NGXKSA1 INFINEON TECHNOLOGIES IPP015N04NG-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 250W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 250W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 15 шт:
термін постачання 21-30 дні (днів)
2+292.27 грн
5+207.94 грн
13+196.47 грн
Мінімальне замовлення: 2
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IRFH5302DTRPBF irfh5302dpbf.pdf
IRFH5302DTRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 29A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 29A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
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IRFH5302TRPBF irfh5302pbf.pdf
IRFH5302TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 32A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 32A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
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IRFR4510TRPBF irfr4510pbf.pdf?fileId=5546d462533600a40153563228bc20f1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 45A; Idm: 252A; 143W; DPAK
Type of transistor: N-MOSFET
Power dissipation: 143W
Polarisation: unipolar
Case: DPAK
Mounting: SMD
Technology: HEXFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: 100V
Pulsed drain current: 252A
Drain current: 45A
On-state resistance: 13.9mΩ
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FZ600R12KE3HOSA1 FZ600R12KE3.pdf
FZ600R12KE3HOSA1
Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 600A; AG-62MM
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM
Electrical mounting: screw
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 600A
Pulsed collector current: 1.2kA
Power dissipation: 2.8kW
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FZ400R12KS4HOSA1 FZ400R12KS4.pdf
Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 400A; AG-62MM
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM
Electrical mounting: screw
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 400A
Pulsed collector current: 800A
Power dissipation: 2.5kW
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FF450R12KT4HOSA1 FF450R12KT4.pdf
Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Topology: IGBT half-bridge
Gate-emitter voltage: ±20V
Collector current: 450A
Pulsed collector current: 900A
Power dissipation: 2.4kW
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FF450R12KE4HOSA1 FF450R12KE4-DTE.pdf
Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM
Electrical mounting: screw
Mechanical mounting: screw
Topology: IGBT half-bridge
Gate-emitter voltage: ±20V
Collector current: 450A
Pulsed collector current: 900A
Power dissipation: 2.4kW
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FZ900R12KE4HOSA1 FZ900R12KE4.pdf
Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 900A; AG-62MMES
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Case: AG-62MMES
Electrical mounting: screw
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 900A
Pulsed collector current: 1.8kA
Power dissipation: 4.3kW
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DF400R12KE3HOSA1 DF400R12KE3.pdf
DF400R12KE3HOSA1
Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; screw
Type of module: IGBT
Semiconductor structure: diode/transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM-1
Electrical mounting: screw
Mechanical mounting: screw
Topology: buck chopper
Gate-emitter voltage: ±20V
Collector current: 400A
Pulsed collector current: 800A
Power dissipation: 2kW
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FF200R12KE3HOSA1 FF200R12KE3.pdf
FF200R12KE3HOSA1
Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM-1
Electrical mounting: screw
Mechanical mounting: screw
Topology: IGBT half-bridge
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Power dissipation: 1.05kW
на замовлення 10 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+9114.70 грн
В кошику  од. на суму  грн.
TT260N22KOFHOSA1 TT260N22KOF.pdf
TT260N22KOFHOSA1
Виробник: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 260A; BG-PB50AT-1; screw
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 260A
Case: BG-PB50AT-1
Max. forward voltage: 1.45V
Max. forward impulse current: 8kA
Gate current: 200mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
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FF200R12KT3EHOSA1 FF200R12KT3E.pdf
FF200R12KT3EHOSA1
Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common emitter; IGBT x2
Type of module: IGBT
Semiconductor structure: common emitter; transistor/transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM-1
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Topology: IGBT x2
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Power dissipation: 1.05kW
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FF300R12KT3EHOSA1 FF300R12KT3E.pdf
FF300R12KT3EHOSA1
Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common emitter; IGBT x2
Type of module: IGBT
Semiconductor structure: common emitter; transistor/transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM-1
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Topology: IGBT x2
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Power dissipation: 1.45kW
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FF200R12KE4PHOSA1 FF200R12KE4P.pdf
FF200R12KE4PHOSA1
Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 200A
Case: AG-62MM-1
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 400A
Mechanical mounting: screw
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TLE9250SJXUMA1 TLE9250.pdf
TLE9250SJXUMA1
Виробник: INFINEON TECHNOLOGIES
Category: CAN interfaces - integrated circuits
Description: IC: interface; transceiver; 4.5÷5.5VDC; PG-DSO-8; -40÷150°C; 60mA
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Supply voltage: 4.5...5.5V DC
Case: PG-DSO-8
Interface: CAN-FD
Mounting: SMD
Operating temperature: -40...150°C
Number of receivers: 1
Number of transmitters: 1
Kind of package: reel; tape
DC supply current: 60mA
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TLE9250VSJXUMA1 TLE9250V.pdf
TLE9250VSJXUMA1
Виробник: INFINEON TECHNOLOGIES
Category: CAN interfaces - integrated circuits
Description: IC: interface; transceiver; 3÷5.5VDC,4.5÷5.5VDC; PG-DSO-8; 60mA
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Supply voltage: 3...5.5V DC; 4.5...5.5V DC
Case: PG-DSO-8
Interface: CAN-FD
Mounting: SMD
Operating temperature: -40...150°C
Number of receivers: 1
Number of transmitters: 1
Kind of package: reel; tape
DC supply current: 60mA
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TLE9250XSJXUMA1 TLE9250X.pdf
TLE9250XSJXUMA1
Виробник: INFINEON TECHNOLOGIES
Category: CAN interfaces - integrated circuits
Description: IC: interface; transceiver; 3÷5.5VDC,4.5÷5.5VDC; PG-DSO-8; 60mA
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Supply voltage: 3...5.5V DC; 4.5...5.5V DC
Case: PG-DSO-8
Interface: CAN-FD
Mounting: SMD
Operating temperature: -40...150°C
Number of receivers: 1
Number of transmitters: 1
Kind of package: reel; tape
DC supply current: 60mA
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FP100R12KT4B11BOSA1 Infineon-FP100R12KT4_B11-DS-v03_00-en_de.pdf?fileId=db3a3043156fd57301161a6b3faf1e18
Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; 515W
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 100A
Case: AG-ECONO3-3
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: EconoPIM™ 3
Mechanical mounting: screw
Power dissipation: 515W
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IRF6215STRLPBF irf6215spbf.pdf
IRF6215STRLPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -13A; 110W; D2PAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -13A
Power dissipation: 110W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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BTS134D BTS134D.pdf
BTS134D
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 3.5A; Ch: 1; N-Channel; SMD; TO252-3
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 3.5A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO252-3
On-state resistance: 35mΩ
Technology: HITFET®
Output voltage: 42V
на замовлення 1005 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+226.41 грн
10+138.37 грн
11+88.68 грн
28+83.33 грн
1000+80.27 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
CY62157EV30LL-45BVXAT Infineon-CY62157EV30_MoBL_8-Mbit_(512_K_16)_Static_RAM-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe669131ef&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files&redirId=File_4_0
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 45ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 45ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 2.2...3.6V DC
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CY62157EV30LL-45ZSXAT Infineon-CY62157EV30_MoBL_8-Mbit_(512_K_16)_Static_RAM-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe669131ef&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files&redirId=File_4_0
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 45ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 45ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 2.2...3.6V DC
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BTS724G BTS724G.pdf
BTS724G
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3.3÷7.3A; Ch: 4; N-Channel; SMD; SO20
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Mounting: SMD
Output current: 3.3...7.3A
Case: SO20
Supply voltage: 5.5...40V DC
On-state resistance: 22.5mΩ
Number of channels: 4
Kind of output: N-Channel
Technology: Classic PROFET
на замовлення 602 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+479.16 грн
4+227.82 грн
11+215.59 грн
В кошику  од. на суму  грн.
IRFR3410TRPBF description irfr3410pbf.pdf
IRFR3410TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 31A; 110W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 31A
Power dissipation: 110W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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BTS3050TF BTS3050TF.pdf
BTS3050TF
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 4A; Ch: 1; N-Channel; SMD; PG-TO252-3
Mounting: SMD
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
Technology: HITFET®
Kind of integrated circuit: low-side
Operating temperature: -40...150°C
Case: PG-TO252-3
On-state resistance: 0.1Ω
Turn-on time: 115µs
Turn-off time: 210µs
Output voltage: 40V
Output current: 4A
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BSC014N04LSIATMA1 BSC014N04LSI-DTE.pdf
BSC014N04LSIATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 96W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 96W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Kind of channel: enhancement
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IPP037N06L3GXKSA1 IPP037N06L3G-DTE.pdf
IPP037N06L3GXKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 90A; 167W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 90A
Power dissipation: 167W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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BSZ034N04LSATMA1 BSZ034N04LS-DTE.pdf
BSZ034N04LSATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 52W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 40A
Power dissipation: 52W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 3.4mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™
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BCV61BE6327 BCV61BE6327-DTE.pdf
BCV61BE6327
Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 30V; 0.1A; 0.3W; SOT143
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SOT143
Mounting: SMD
Frequency: 250MHz
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IRSM836-024MATR IRSM836-024MATR.pdf
IRSM836-024MATR
Виробник: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; MOSFET three-phase bridge; iMOTION™; PQFN12X12; 2A
Type of integrated circuit: driver
Topology: MOSFET three-phase bridge
Kind of integrated circuit: 3-phase motor controller; IPM
Case: PQFN12X12
Output current: 2A
Mounting: SMD
Operating temperature: -40...150°C
Power dissipation: 16W
Integrated circuit features: charge pump; dead time; fault detection; integrated bootstrap functionality
Protection: anti-overload OPP; undervoltage UVP
Technology: iMOTION™
Operating voltage: 11.5...18.5/8.9...200V DC
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AUIRGSL4062D1 AUIRGx4062D1.pdf
AUIRGSL4062D1
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; Trench; 600V; 39A; 123W; TO262
Case: TO262
Mounting: THT
Kind of package: tube
Type of transistor: IGBT
Pulsed collector current: 72A
Collector current: 39A
Collector-emitter voltage: 600V
Power dissipation: 123W
Gate charge: 77nC
Technology: Trench
Gate-emitter voltage: ±20V
Turn-on time: 35ns
Turn-off time: 176ns
на замовлення 9 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+339.20 грн
3+294.33 грн
4+285.15 грн
9+269.86 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IRGSL4062DPBF irgs4062dpbf.pdf
IRGSL4062DPBF
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 48A; 250W; TO262
Case: TO262
Mounting: THT
Kind of package: tube
Type of transistor: IGBT
Collector current: 48A
Collector-emitter voltage: 600V
Power dissipation: 250W
Features of semiconductor devices: integrated anti-parallel diode
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IRF6216TRPBF irf6216pbf.pdf
IRF6216TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -2.2A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -2.2A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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BCX6925H6327XTSA1 BCX69.pdf
BCX6925H6327XTSA1
Виробник: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 20V; 1A; 3W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 1A
Power dissipation: 3W
Case: SOT89
Mounting: SMD
Frequency: 100MHz
на замовлення 7 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
7+58.45 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
BCX6816H6327XTSA1 BCX68.pdf
BCX6816H6327XTSA1
Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 20V; 1A; 3W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 1A
Power dissipation: 3W
Case: SOT89
Mounting: SMD
Frequency: 100MHz
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BTS3134D BTS3134D.pdf
BTS3134D
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 3.5A; Ch: 1; N-Channel; SMD; TO252-3
Number of channels: 1
Kind of output: N-Channel
Technology: HITFET®
Kind of integrated circuit: low-side
Mounting: SMD
Case: TO252-3
Output voltage: 42V
Output current: 3.5A
Type of integrated circuit: power switch
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IPB60R180C7ATMA1 IPB60R180C7.pdf
IPB60R180C7ATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; 68W; D2PAK
Type of transistor: N-MOSFET
Technology: CoolMOS™ C7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Power dissipation: 68W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 24nC
Kind of channel: enhancement
на замовлення 950 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+179.48 грн
9+105.50 грн
24+99.38 грн
500+95.56 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IDW100E60FKSA1 IDW100E60FKSA1.pdf
IDW100E60FKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 100A; tube; TO247-3
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 100A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Case: TO247-3
на замовлення 60 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+274.16 грн
7+134.55 грн
19+127.67 грн
Мінімальне замовлення: 2
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XMC DIGITAL POWER EXPLORER KIT
Виробник: INFINEON TECHNOLOGIES
Category: Development kits - others
Description: Dev.kit: ARM Infineon; XMC1300,XMC4200; Add-on connectors: 1
Type of development kit: ARM Infineon
Family: XMC1300; XMC4200
Kit contents: base board with buck converter; board with XMC1300 microcontroller; board with XMC4200 microcontroller
Components: BSC0924ND; IRS2011S; XMC1300; XMC4200
Interface: CAN x2; Ethernet; GPIO; I2C; I2S; LIN; PWM; SPI; UART; USB; USIC x2
Kind of connector: pin strips; USB B micro
Number of add-on connectors: 1
Kind of architecture: Cortex M4; Cortex M0
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IRFSL7430PBF IRFSL7430PBF.pdf
IRFSL7430PBF
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 301A; 375W; TO262
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 301A
Power dissipation: 375W
Case: TO262
Gate-source voltage: ±20V
On-state resistance: 1.2mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 300nC
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IFX007TAUMA1 IFX007T.pdf
IFX007TAUMA1
+1
Виробник: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; MOSFET half-bridge; IMC,motor controller; PG-TO263-7
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: IMC; motor controller
Case: PG-TO263-7
Mounting: SMD
Operating temperature: -40...150°C
Number of channels: 1
Kind of package: reel; tape
Technology: NovalithIC™
On-state resistance: 10mΩ
Operating voltage: 5.5...40V DC
на замовлення 773 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+242.05 грн
5+201.82 грн
6+154.43 грн
17+146.02 грн
Мінімальне замовлення: 2
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BCR141E6327 BCR141.pdf
BCR141E6327
Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.25W; SOT23; R1: 22kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT23
Mounting: SMD
Frequency: 130MHz
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
на замовлення 5140 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
17+24.70 грн
23+16.82 грн
38+10.31 грн
100+8.72 грн
250+6.00 грн
325+2.75 грн
894+2.60 грн
Мінімальне замовлення: 17
В кошику  од. на суму  грн.
IPP048N12N3GXKSA1 IPP048N12N3G-DTE.pdf
IPP048N12N3GXKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 120A; 300W; PG-TO220-3
Mounting: THT
Case: PG-TO220-3
Drain-source voltage: 120V
Drain current: 120A
On-state resistance: 4.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Kind of package: tube
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
на замовлення 113 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+338.37 грн
7+142.96 грн
18+135.31 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
BSC054N04NSGATMA1 BSC054N04NSG-DTE.pdf
BSC054N04NSGATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 81A; 57W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 81A
Power dissipation: 57W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 5.4mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
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BSB014N04LX3GXUMA1 BSB014N04LX3G-DTE.pdf
BSB014N04LX3GXUMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 89W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 180A
Power dissipation: 89W
Case: CanPAK™ MX; MG-WDSON-2
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™
товару немає в наявності
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BSC014N04LSATMA1 BSC014N04LS-DTE.pdf
BSC014N04LSATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 96W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 96W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Kind of channel: enhancement
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IRLTS6342TRPBF irlts6342pbf.pdf
IRLTS6342TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8.3A; 2W; TSOP6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8.3A
Power dissipation: 2W
Case: TSOP6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Technology: HEXFET®
на замовлення 723 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
12+37.05 грн
17+23.62 грн
25+19.72 грн
50+17.12 грн
61+15.14 грн
100+14.91 грн
167+14.30 грн
250+13.91 грн
Мінімальне замовлення: 12
В кошику  од. на суму  грн.
DDB6U205N16LHOSA1 DDB6U205N16LHOSA1.pdf
DDB6U205N16LHOSA1
Виробник: INFINEON TECHNOLOGIES
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 205A; screw
Case: AG-ISOPACK
Electrical mounting: screw
Version: module
Type of bridge rectifier: three-phase
Leads: M5 screws
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.47V
Load current: 205A
Max. forward impulse current: 1.375kA
на замовлення 2 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+16054.26 грн
В кошику  од. на суму  грн.
ITS4141NHUMA1 ITS4141N.pdf
ITS4141NHUMA1
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 700mA; Ch: 1; N-Channel; SMD; SOT223
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.7A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223
On-state resistance: 0.2Ω
Kind of package: reel; tape
Supply voltage: 12...45V DC
Turn-off time: 0.1ms
Power dissipation: 1.4W
Technology: Industrial PROFET
Turn-on time: 150µs
Operating temperature: -30...85°C
на замовлення 3136 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
4+125.14 грн
10+78.74 грн
13+71.86 грн
35+68.04 грн
250+65.75 грн
500+64.98 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
SPD15P10PLGBTMA1 SPD15P10PLGBTMA1-DTE.pdf
SPD15P10PLGBTMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -15A; 128W; PG-TO252-3
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -15A
Power dissipation: 128W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: SMD
Kind of channel: enhancement
на замовлення 2194 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
4+135.02 грн
10+94.80 грн
12+76.45 грн
33+71.86 грн
250+69.57 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
SPD09P06PLGBTMA1 SPD09P06PLGBTMA1-DTE.pdf
SPD09P06PLGBTMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -9.7A; 42W; PG-TO252-3
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -9.7A
Power dissipation: 42W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.25Ω
Mounting: SMD
Kind of channel: enhancement
товару немає в наявності
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SPD18P06PGBTMA1 SPD18P06PGBTMA1-DTE.PDF
SPD18P06PGBTMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -18.6A; 80W; PG-TO252-3
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -18.6A
Power dissipation: 80W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: SMD
Kind of channel: enhancement
на замовлення 2429 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
6+80.68 грн
10+68.80 грн
18+54.28 грн
48+51.22 грн
1000+49.69 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
BTS3405G BTS3405G.pdf
BTS3405G
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 350mA; Ch: 2; N-Channel; SMD; HITFET®
Output voltage: 10V
Output current: 0.35A
Type of integrated circuit: power switch
Number of channels: 2
Kind of output: N-Channel
Technology: HITFET®
Kind of integrated circuit: low-side
Mounting: SMD
Case: PG-DSO-8-25
On-state resistance: 0.35Ω
на замовлення 2209 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+167.95 грн
10+100.15 грн
11+81.80 грн
30+77.98 грн
100+74.92 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IRL2910STRLPBF irl2910spbf.pdf
IRL2910STRLPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 55A; 3.8W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 55A
Power dissipation: 3.8W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
Technology: HEXFET®
товару немає в наявності
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BAT1704E6327HTSA1 BAT1704E6327HTSA1.pdf
BAT1704E6327HTSA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 4V; 0.13A; 150mW
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 4V
Load current: 0.13A
Semiconductor structure: double series
Power dissipation: 0.15W
на замовлення 2126 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
23+18.11 грн
30+12.77 грн
100+8.10 грн
137+6.50 грн
376+6.19 грн
650+6.12 грн
1000+5.96 грн
Мінімальне замовлення: 23
В кошику  од. на суму  грн.
XMC4108Q48K64ABXUMA1 XMC4100-4200-DTE.pdf
XMC4108Q48K64ABXUMA1
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-48; 20kBSRAM,64kBFLASH; 3.3VDC
Operating temperature: -40...125°C
Case: PG-VQFN-48
Supply voltage: 3.3V DC
Type of integrated circuit: ARM microcontroller
Interface: CAN; GPIO; I2C; I2S; LIN; SPI; UART; USB
Number of inputs/outputs: 21
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Number of A/D channels: 8
Kind of architecture: Cortex M4
Family: XMC4100
Memory: 20kB SRAM; 64kB FLASH
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BCM856SH6327 BCM856SH6327.pdf
BCM856SH6327
Виробник: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 65V; 0.1A; 0.25W; SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT363
Mounting: SMD
Frequency: 250MHz
на замовлення 1835 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
30+14.65 грн
45+9.48 грн
100+7.64 грн
130+7.11 грн
355+6.73 грн
500+6.57 грн
Мінімальне замовлення: 30
В кошику  од. на суму  грн.
BSS83PH6327XTSA1 BSS83PH6327XTSA1-dte.pdf
BSS83PH6327XTSA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.33A; 0.36W; PG-SOT23
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -330mA
Power dissipation: 0.36W
Case: PG-SOT23
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IMW120R350M1HXKSA1 Infineon-IMW120R350M1H-DS-v01_01-EN.pdf?fileId=5546d46269e1c019016a92fe1a0a66a3
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 4.7A; Idm: 13A; 30W
Type of transistor: N-MOSFET
Technology: CoolSiC™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 4.7A
Pulsed drain current: 13A
Power dissipation: 30W
Case: TO247
Gate-source voltage: -7...23V
On-state resistance: 662mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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IPP015N04NGXKSA1 IPP015N04NG-DTE.pdf
IPP015N04NGXKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 250W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 250W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 15 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+292.27 грн
5+207.94 грн
13+196.47 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
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