Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (149543) > Сторінка 2456 з 2493
Фото | Назва | Виробник | Інформація |
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IRFB4410ZPBF | INFINEON TECHNOLOGIES |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 100V; 97A; 230W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 97A Power dissipation: 230W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 9mΩ Mounting: THT Gate charge: 83nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IRFR3710ZTRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 56A; 140W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 56A Case: DPAK Mounting: SMD Kind of package: reel Kind of channel: enhancement Power dissipation: 140W Technology: HEXFET® |
на замовлення 1662 шт: термін постачання 21-30 дні (днів) |
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SPA15N60C3XKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 9.4A; Idm: 45A; 34W Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 9.4A Pulsed drain current: 45A Power dissipation: 34W Case: PG-TO220 FP Gate-source voltage: ±20V On-state resistance: 0.28Ω Mounting: THT Kind of channel: enhancement |
на замовлення 62 шт: термін постачання 21-30 дні (днів) |
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AIHD15N60RATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 15A; 250W; DPAK Type of transistor: IGBT Technology: TRENCHSTOP™ RC Power dissipation: 250W Case: DPAK Mounting: SMD Gate charge: 90nC Kind of package: reel; tape Collector current: 15A Turn-on time: 26ns Gate-emitter voltage: ±20V Pulsed collector current: 45A Collector-emitter voltage: 600V Turn-off time: 319ns Features of semiconductor devices: reverse conducting IGBT (RC-IGBT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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AIHD15N60RFATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 600V; 15A; 250W; DPAK Type of transistor: IGBT Technology: TRENCHSTOP™ Power dissipation: 250W Case: DPAK Mounting: SMD Gate charge: 90nC Kind of package: reel; tape Collector current: 15A Turn-on time: 28ns Gate-emitter voltage: ±20V Pulsed collector current: 45A Collector-emitter voltage: 600V Turn-off time: 177ns Features of semiconductor devices: reverse conducting IGBT (RC-IGBT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IRF2204PBF | INFINEON TECHNOLOGIES |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 40V; 210A; 330W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 210A Case: TO220AB Mounting: THT Kind of package: tube Kind of channel: enhancement Power dissipation: 330W Technology: HEXFET® |
на замовлення 22 шт: термін постачання 21-30 дні (днів) |
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DZ1070N22K | INFINEON TECHNOLOGIES |
![]() Description: Module: diode; single diode; 2.2kV; If: 1.07kA; BG-PB70AT-1; screw Type of semiconductor module: diode Mechanical mounting: screw Electrical mounting: screw Semiconductor structure: single diode Max. forward voltage: 0.75V Load current: 1.07kA Max. off-state voltage: 2.2kV Max. forward impulse current: 41kA Case: BG-PB70AT-1 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
DZ1070N26K | INFINEON TECHNOLOGIES |
![]() Description: Module: diode; single diode; 2.6kV; If: 1.07kA; BG-PB70AT-1; screw Type of semiconductor module: diode Mechanical mounting: screw Electrical mounting: screw Semiconductor structure: single diode Max. forward voltage: 0.75V Load current: 1.07kA Max. off-state voltage: 2.6kV Max. forward impulse current: 41kA Case: BG-PB70AT-1 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
DZ1070N28K | INFINEON TECHNOLOGIES |
![]() Description: Module: diode; single diode; 2.8kV; If: 1.07kA; BG-PB70AT-1; screw Type of semiconductor module: diode Mechanical mounting: screw Electrical mounting: screw Semiconductor structure: single diode Max. forward voltage: 0.75V Load current: 1.07kA Max. off-state voltage: 2.8kV Max. forward impulse current: 41kA Case: BG-PB70AT-1 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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IPN80R1K4P7ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 2.7A; 7W; PG-SOT223; ESD Kind of package: reel Case: PG-SOT223 Mounting: SMD Technology: CoolMOS™ P7 Kind of channel: enhancement Version: ESD Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 10nC On-state resistance: 1.4Ω Drain current: 2.7A Power dissipation: 7W Gate-source voltage: ±20V Drain-source voltage: 800V |
на замовлення 2847 шт: термін постачання 21-30 дні (днів) |
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BTS4142N | INFINEON TECHNOLOGIES |
![]() Description: IC: power switch; high-side; 1.4A; Ch: 1; N-Channel; SMD; SOT223-3 Supply voltage: 12...45V DC Technology: Classic PROFET Mounting: SMD Kind of integrated circuit: high-side Kind of output: N-Channel Type of integrated circuit: power switch Case: SOT223-3 Output current: 1.4A On-state resistance: 0.15Ω Number of channels: 1 |
на замовлення 415 шт: термін постачання 21-30 дні (днів) |
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IHW30N135R5XKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 1.35kV; 30A; 165W; TO247-3 Type of transistor: IGBT Technology: TRENCHSTOP™ Collector-emitter voltage: 1.35kV Collector current: 30A Power dissipation: 165W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 90A Mounting: THT Gate charge: 235nC Kind of package: tube Turn-off time: 680ns Features of semiconductor devices: reverse conducting IGBT (RC-IGBT) |
на замовлення 269 шт: термін постачання 21-30 дні (днів) |
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BGS14MPA9E6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: RF switch; SP4T; Ch: 4; MIPI; ATSLP-9-3; 1.65÷1.95VDC; 0.05÷6GHz Interface: MIPI Type of integrated circuit: RF switch Mounting: SMD Output configuration: SP4T Application: telecommunication Supply voltage: 1.65...1.95V DC Number of channels: 4 Case: ATSLP-9-3 Bandwidth: 0.05...6GHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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BSP76E6433 | INFINEON TECHNOLOGIES |
![]() Description: IC: power switch; low-side; 1.4A; Ch: 1; N-Channel; SMD; PG-SOT223-4 Mounting: SMD Kind of integrated circuit: low-side Kind of output: N-Channel Case: PG-SOT223-4 Type of integrated circuit: power switch Number of channels: 1 Output current: 1.4A Output voltage: 42V Technology: HITFET® |
на замовлення 1956 шт: термін постачання 21-30 дні (днів) |
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IPB027N10N3GATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 300W; PG-TO263-7 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 120A Power dissipation: 300W Case: PG-TO263-7 Gate-source voltage: ±20V On-state resistance: 2.7mΩ Mounting: SMD Kind of channel: enhancement Technology: OptiMOS™ 3 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IPB027N10N5ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 250W; PG-TO263-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 120A Power dissipation: 250W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 2.7mΩ Mounting: SMD Kind of channel: enhancement Technology: OptiMOS™ 5 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IRLR3636TRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 99A; 143W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 99A Power dissipation: 143W Case: DPAK Mounting: SMD Kind of package: reel Kind of channel: enhancement Features of semiconductor devices: logic level |
на замовлення 1492 шт: термін постачання 21-30 дні (днів) |
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BTS6163D | INFINEON TECHNOLOGIES |
![]() Description: IC: power switch; high-side; 5.5A; Ch: 1; N-Channel; SMD Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 5.5A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: PG-TO252-5-11 On-state resistance: 20mΩ Supply voltage: 5.5...62V DC Technology: Classic PROFET |
на замовлення 1913 шт: термін постачання 21-30 дні (днів) |
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BTS441RG | INFINEON TECHNOLOGIES |
![]() Description: IC: power switch; high-side; 17A; Ch: 1; N-Channel; SMD; TO263-5 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 17A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: TO263-5 On-state resistance: 15mΩ Technology: Classic PROFET Output voltage: 4.75...43V |
на замовлення 906 шт: термін постачання 21-30 дні (днів) |
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BTS716GXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: power switch; high-side; 2.6÷5.3A; Ch: 4; N-Channel; SMD; SO20 Kind of integrated circuit: high-side Kind of output: N-Channel Case: SO20 Type of integrated circuit: power switch Turn-off time: 0.25ms Turn-on time: 270µs On-state resistance: 35mΩ Output current: 2.6...5.3A Power dissipation: 3.6W Number of channels: 4 Supply voltage: 5.5...40V DC Technology: Classic PROFET Mounting: SMD |
на замовлення 749 шт: термін постачання 21-30 дні (днів) |
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BTS4175SGA | INFINEON TECHNOLOGIES |
![]() Description: IC: power switch; high-side; 1.3A; Ch: 1; N-Channel; SMD; SO8 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 1.3A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: SO8 On-state resistance: 0.175Ω Supply voltage: 6...52V DC Technology: Classic PROFET |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IRFR5410TRPBF | INFINEON TECHNOLOGIES |
![]() ![]() Description: Transistor: P-MOSFET; unipolar; -100V; -13A; 66W; DPAK Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -100V Drain current: -13A Power dissipation: 66W Case: DPAK Mounting: SMD Kind of package: reel Kind of channel: enhancement |
на замовлення 1384 шт: термін постачання 21-30 дні (днів) |
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BSP742R | INFINEON TECHNOLOGIES |
![]() Description: IC: power switch; high-side; 400mA; Ch: 1; N-Channel; SMD; SO8 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 0.4A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: SO8 On-state resistance: 0.25Ω Technology: Classic PROFET Output voltage: 40V |
на замовлення 1737 шт: термін постачання 21-30 дні (днів) |
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BSP742RIXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: power switch; high-side; 400mA; Ch: 1; N-Channel; SMD; SO8; reel Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 0.4A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: SO8 On-state resistance: 0.25Ω Kind of package: reel Technology: Classic PROFET |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IKW75N60TFKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 600V; 75A; 428W; TO247-3 Type of transistor: IGBT Technology: TRENCHSTOP™ Power dissipation: 428W Case: TO247-3 Mounting: THT Gate charge: 470nC Kind of package: tube Collector-emitter voltage: 600V Features of semiconductor devices: integrated anti-parallel diode Turn-on time: 69ns Turn-off time: 401ns Collector current: 75A Gate-emitter voltage: ±20V Pulsed collector current: 225A |
на замовлення 32 шт: термін постачання 21-30 дні (днів) |
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IRFS7730TRLPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 75V; 174A; Idm: 984A; 375W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 75V Drain current: 174A Pulsed drain current: 984A Power dissipation: 375W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 2.6mΩ Mounting: SMD Gate charge: 407nC Kind of package: reel Kind of channel: enhancement |
на замовлення 825 шт: термін постачання 21-30 дні (днів) |
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IRFR3910TRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 15A; 52W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 15A Case: DPAK Mounting: SMD Kind of package: reel Kind of channel: enhancement Power dissipation: 52W Technology: HEXFET® |
на замовлення 1481 шт: термін постачання 21-30 дні (днів) |
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IRFR120ZTRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 8.7A; 35W; DPAK Case: DPAK Mounting: SMD Kind of package: reel Polarisation: unipolar Technology: HEXFET® Drain current: 8.7A Kind of channel: enhancement Power dissipation: 35W Drain-source voltage: 100V Type of transistor: N-MOSFET |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BSS123NH6433XTMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 0.15A; Idm: 0.77A; 0.5W; SOT23 Case: SOT23 Type of transistor: N-MOSFET Mounting: SMD Technology: OptiMOS™ Drain-source voltage: 100V Drain current: 0.15A Gate charge: 0.6nC On-state resistance: 10Ω Power dissipation: 0.5W Pulsed drain current: 0.77A Gate-source voltage: ±20V Polarisation: unipolar Kind of channel: enhancement |
на замовлення 457 шт: термін постачання 21-30 дні (днів) |
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IRF5803TRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -40V; -3.4A; 1.3W; TSOP6 Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -40V Drain current: -3.4A Power dissipation: 1.3W Case: TSOP6 Mounting: SMD Kind of package: reel Kind of channel: enhancement |
на замовлення 2489 шт: термін постачання 21-30 дні (днів) |
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IPA60R190P6XKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 34W; TO220FP Technology: CoolMOS™ P6 Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: THT Case: TO220FP Polarisation: unipolar On-state resistance: 0.19Ω Drain current: 20.2A Gate-source voltage: ±20V Power dissipation: 34W Drain-source voltage: 600V Kind of package: tube |
на замовлення 478 шт: термін постачання 21-30 дні (днів) |
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PVDZ172NPBF | INFINEON TECHNOLOGIES |
![]() ![]() Description: Relay: solid state; SPST-NO; Icntrl: 5÷25mA; 1.5A; 0÷60VDC; MOSFET Type of relay: solid state Contacts configuration: SPST-NO Control current: 5...25mA Max. operating current: 1.5A Switched voltage: 0...60V DC Manufacturer series: PVDZ172NPbF Relay variant: MOSFET On-state resistance: 0.25Ω Mounting: THT Case: DIP8 Operate time: 2ms Release time: 0.5ms Operating temperature: -40...85°C |
на замовлення 31 шт: термін постачання 21-30 дні (днів) |
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IRS21867STRPBF | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO8 Output current: -4...4A Power: 625mW Number of channels: 2 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Voltage class: 600V Turn-on time: 192ns Turn-off time: 188ns |
на замовлення 1661 шт: термін постачання 21-30 дні (днів) |
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IRFB5615PBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 150V; 35A; 144W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 150V Drain current: 35A Power dissipation: 144W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 39mΩ Mounting: THT Gate charge: 26nC Kind of package: tube Kind of channel: enhancement |
на замовлення 337 шт: термін постачання 21-30 дні (днів) |
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2EDL05N06PFXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; MOSFET half-bridge; EiceDRIVER™; PG-DSO-8; -0.7÷0.36A Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: high-/low-side; MOSFET gate driver Case: PG-DSO-8 Output current: -0.7...0.36A Number of channels: 2 Supply voltage: 10...20V Mounting: SMD Kind of package: reel; tape Voltage class: 600V Technology: EiceDRIVER™ Integrated circuit features: integrated bootstrap functionality |
на замовлення 1258 шт: термін постачання 21-30 дні (днів) |
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2EDN7524FXTMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; MOSFET half-bridge; low-side,gate driver; PG-DSO-8 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; low-side Technology: EiceDRIVER™ Case: PG-DSO-8 Output current: -5...5A Number of channels: 2 Mounting: SMD Kind of package: reel; tape Supply voltage: 4.5...20V Voltage class: 20V Protection: undervoltage UVP |
на замовлення 1430 шт: термін постачання 21-30 дні (днів) |
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IRLR7833TRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 140A; 140W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 140A Power dissipation: 140W Case: DPAK Mounting: SMD Kind of package: reel Kind of channel: enhancement Features of semiconductor devices: logic level |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BTS462T | INFINEON TECHNOLOGIES |
![]() Description: IC: power switch; high-side; 2.3A; Ch: 1; N-Channel; SMD; TO252-5 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 2.3A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: TO252-5 Supply voltage: 5...34V DC Technology: Classic PROFET Output voltage: 43V |
на замовлення 1585 шт: термін постачання 21-30 дні (днів) |
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IRF1104PBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 170W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 100A Power dissipation: 170W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 9mΩ Mounting: THT Gate charge: 62nC Kind of package: tube Kind of channel: enhancement |
на замовлення 25 шт: термін постачання 21-30 дні (днів) |
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FP75R12KT4 | INFINEON TECHNOLOGIES |
![]() Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 75A Semiconductor structure: diode/transistor Electrical mounting: Press-in PCB Mechanical mounting: screw Case: AG-ECONO3-3 Gate-emitter voltage: ±20V Collector current: 75A Pulsed collector current: 150A Power dissipation: 385W Max. off-state voltage: 1.2kV Technology: EconoPIM™ 3 Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Type of semiconductor module: IGBT Application: Inverter |
на замовлення 6 шт: термін постачання 21-30 дні (днів) |
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IRFB4229PBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 250V; 46A; 330W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 250V Drain current: 46A Power dissipation: 330W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 46mΩ Mounting: THT Gate charge: 72nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BAT1504WH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: Schottky rectifying; SOT323; SMD; 4V; 0.11A; 100mW Power dissipation: 0.1W Case: SOT323 Mounting: SMD Load current: 0.11A Max. off-state voltage: 4V Semiconductor structure: double series Type of diode: Schottky rectifying |
на замовлення 1141 шт: термін постачання 21-30 дні (днів) |
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BTS711L1 | INFINEON TECHNOLOGIES |
![]() ![]() Description: IC: power switch; high-side; 1.9÷4.4A; Ch: 4; N-Channel; SMD; DSO20 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 1.9...4.4A Number of channels: 4 Mounting: SMD Case: DSO20 On-state resistance: 50mΩ Technology: Classic PROFET Kind of output: N-Channel Supply voltage: 5...34V DC |
на замовлення 1497 шт: термін постачання 21-30 дні (днів) |
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IRF300P226 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; StrongIRFET™; unipolar; 300V; 53A; 313W Type of transistor: N-MOSFET Case: TO247AC Kind of channel: enhancement Kind of package: tube Mounting: THT Technology: StrongIRFET™ Polarisation: unipolar Gate charge: 191nC On-state resistance: 19mΩ Gate-source voltage: ±20V Drain current: 53A Drain-source voltage: 300V Power dissipation: 313W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IRF300P227 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; StrongIRFET™; unipolar; 300V; 35A; 313W Type of transistor: N-MOSFET Case: TO247AC Kind of channel: enhancement Kind of package: tube Mounting: THT Technology: StrongIRFET™ Polarisation: unipolar Gate charge: 107nC On-state resistance: 40mΩ Gate-source voltage: ±20V Drain current: 35A Drain-source voltage: 300V Power dissipation: 313W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IRF3315STRLPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 150V; 21A; 94W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 150V Drain current: 21A Power dissipation: 94W Case: D2PAK Mounting: SMD Kind of channel: enhancement Kind of package: reel |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IRF3703PBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 210A; 230W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 210A Case: TO220AB Mounting: THT Kind of package: tube Kind of channel: enhancement Power dissipation: 230W Technology: HEXFET® |
на замовлення 1 шт: термін постачання 21-30 дні (днів) |
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BSS123IXTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 0.15A; Idm: 0.77A; 0.5W; SOT23 Case: SOT23 Mounting: SMD Type of transistor: N-MOSFET Technology: OptiMOS™ Gate charge: 0.63nC Drain current: 0.15A Power dissipation: 0.5W Pulsed drain current: 0.77A On-state resistance: 10Ω Gate-source voltage: ±20V Drain-source voltage: 100V Polarisation: unipolar Kind of channel: enhancement |
на замовлення 164 шт: термін постачання 21-30 дні (днів) |
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BSS123NH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 0.15A; Idm: 0.77A; 0.5W; SOT23 Case: SOT23 Mounting: SMD Type of transistor: N-MOSFET Technology: OptiMOS™ Gate charge: 0.6nC Drain current: 0.15A Power dissipation: 0.5W Pulsed drain current: 0.77A On-state resistance: 10Ω Gate-source voltage: ±20V Drain-source voltage: 100V Polarisation: unipolar Kind of channel: enhancement |
на замовлення 20471 шт: термін постачання 21-30 дні (днів) |
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BSZ110N06NS3GATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 20A; Idm: 80A; 50W; PG-TSDSON-8 Case: PG-TSDSON-8 Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar On-state resistance: 11mΩ Power dissipation: 50W Drain current: 20A Gate-source voltage: ±20V Drain-source voltage: 60V Pulsed drain current: 80A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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BSZ110N08NS5ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 80V; 40A; 50W; PG-TSDSON-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 40A Power dissipation: 50W Case: PG-TSDSON-8 Gate-source voltage: ±20V On-state resistance: 11mΩ Mounting: SMD Kind of channel: enhancement Technology: OptiMOS™ 5 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BCR133SH6327 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; SOT363; R1: 10kΩ Kind of transistor: BRT Case: SOT363 Mounting: SMD Type of transistor: NPN x2 Collector current: 0.1A Power dissipation: 0.25W Collector-emitter voltage: 50V Base resistor: 10kΩ Base-emitter resistor: 10kΩ Frequency: 130MHz Polarisation: bipolar |
на замовлення 363 шт: термін постачання 21-30 дні (днів) |
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IR2130SPBF | INFINEON TECHNOLOGIES |
![]() ![]() Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge Type of integrated circuit: driver Topology: IGBT three-phase bridge; MOSFET three-phase bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO28-W Output current: -420...200mA Power: 1.6W Number of channels: 6 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V Turn-on time: 675ns Turn-off time: 475ns |
на замовлення 58 шт: термін постачання 21-30 дні (днів) |
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IR2133SPBF | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge Type of integrated circuit: driver Topology: IGBT three-phase bridge; MOSFET three-phase bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO28-W Output current: -420...200mA Power: 1.6W Number of channels: 6 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Voltage class: 0.6/1.2kV Turn-on time: 750ns Turn-off time: 700ns |
на замовлення 14 шт: термін постачання 21-30 дні (днів) |
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IRFB4321PBF | INFINEON TECHNOLOGIES |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 150V; 83A; 330W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 150V Drain current: 83A Power dissipation: 330W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 15mΩ Mounting: THT Gate charge: 71nC Kind of package: tube Kind of channel: enhancement |
на замовлення 49 шт: термін постачання 21-30 дні (днів) |
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IRFB4332PbF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 250V; 60A; 390W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 250V Drain current: 60A Power dissipation: 390W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 33mΩ Mounting: THT Gate charge: 99nC Kind of package: tube Kind of channel: enhancement |
на замовлення 53 шт: термін постачання 21-30 дні (днів) |
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SPA06N80C3 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 6A; 39W; PG-TO220-3-FP Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 6A Power dissipation: 39W Case: PG-TO220-3-FP Gate-source voltage: ±20V On-state resistance: 0.9Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
на замовлення 16 шт: термін постачання 21-30 дні (днів) |
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SPP06N80C3 | INFINEON TECHNOLOGIES |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 800V; 6A; 83W; PG-TO220-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 6A Power dissipation: 83W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 0.9Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
на замовлення 94 шт: термін постачання 21-30 дні (днів) |
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AIHD10N60RFATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 600V; 10A; 150W; DPAK Type of transistor: IGBT Technology: TRENCHSTOP™ Power dissipation: 150W Case: DPAK Mounting: SMD Kind of package: reel; tape Gate-emitter voltage: ±20V Pulsed collector current: 30A Collector-emitter voltage: 600V Features of semiconductor devices: reverse conducting IGBT (RC-IGBT) Gate charge: 64nC Turn-on time: 27ns Turn-off time: 186ns Collector current: 10A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IRS21094PBF | INFINEON TECHNOLOGIES |
![]() ![]() Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.6W Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: DIP14 Output current: -600...290mA Power: 1.6W Number of channels: 2 Supply voltage: 10...20V DC Mounting: THT Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V Turn-on time: 850ns Turn-off time: 235ns |
на замовлення 96 шт: термін постачання 21-30 дні (днів) |
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IRFB4410ZPBF | ![]() |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 97A; 230W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 97A
Power dissipation: 230W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 83nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 97A; 230W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 97A
Power dissipation: 230W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 83nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
IRFR3710ZTRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 56A; 140W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 56A
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 140W
Technology: HEXFET®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 56A; 140W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 56A
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 140W
Technology: HEXFET®
на замовлення 1662 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4+ | 127.04 грн |
5+ | 98.65 грн |
10+ | 88.20 грн |
25+ | 75.21 грн |
28+ | 33.73 грн |
76+ | 31.91 грн |
SPA15N60C3XKSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 9.4A; Idm: 45A; 34W
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 9.4A
Pulsed drain current: 45A
Power dissipation: 34W
Case: PG-TO220 FP
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 9.4A; Idm: 45A; 34W
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 9.4A
Pulsed drain current: 45A
Power dissipation: 34W
Case: PG-TO220 FP
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of channel: enhancement
на замовлення 62 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3+ | 174.79 грн |
16+ | 157.55 грн |
25+ | 153.59 грн |
AIHD15N60RATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 15A; 250W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Power dissipation: 250W
Case: DPAK
Mounting: SMD
Gate charge: 90nC
Kind of package: reel; tape
Collector current: 15A
Turn-on time: 26ns
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Collector-emitter voltage: 600V
Turn-off time: 319ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 15A; 250W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Power dissipation: 250W
Case: DPAK
Mounting: SMD
Gate charge: 90nC
Kind of package: reel; tape
Collector current: 15A
Turn-on time: 26ns
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Collector-emitter voltage: 600V
Turn-off time: 319ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
товару немає в наявності
В кошику
од. на суму грн.
AIHD15N60RFATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 15A; 250W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 250W
Case: DPAK
Mounting: SMD
Gate charge: 90nC
Kind of package: reel; tape
Collector current: 15A
Turn-on time: 28ns
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Collector-emitter voltage: 600V
Turn-off time: 177ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 15A; 250W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 250W
Case: DPAK
Mounting: SMD
Gate charge: 90nC
Kind of package: reel; tape
Collector current: 15A
Turn-on time: 28ns
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Collector-emitter voltage: 600V
Turn-off time: 177ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
товару немає в наявності
В кошику
од. на суму грн.
IRF2204PBF | ![]() |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 210A; 330W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 210A
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 330W
Technology: HEXFET®
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 210A; 330W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 210A
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 330W
Technology: HEXFET®
на замовлення 22 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3+ | 202.07 грн |
5+ | 142.51 грн |
10+ | 119.55 грн |
11+ | 90.26 грн |
DZ1070N22K |
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Виробник: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; single diode; 2.2kV; If: 1.07kA; BG-PB70AT-1; screw
Type of semiconductor module: diode
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Load current: 1.07kA
Max. off-state voltage: 2.2kV
Max. forward impulse current: 41kA
Case: BG-PB70AT-1
Category: Diode modules
Description: Module: diode; single diode; 2.2kV; If: 1.07kA; BG-PB70AT-1; screw
Type of semiconductor module: diode
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Load current: 1.07kA
Max. off-state voltage: 2.2kV
Max. forward impulse current: 41kA
Case: BG-PB70AT-1
товару немає в наявності
В кошику
од. на суму грн.
DZ1070N26K |
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Виробник: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; single diode; 2.6kV; If: 1.07kA; BG-PB70AT-1; screw
Type of semiconductor module: diode
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Load current: 1.07kA
Max. off-state voltage: 2.6kV
Max. forward impulse current: 41kA
Case: BG-PB70AT-1
Category: Diode modules
Description: Module: diode; single diode; 2.6kV; If: 1.07kA; BG-PB70AT-1; screw
Type of semiconductor module: diode
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Load current: 1.07kA
Max. off-state voltage: 2.6kV
Max. forward impulse current: 41kA
Case: BG-PB70AT-1
товару немає в наявності
В кошику
од. на суму грн.
DZ1070N28K |
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Виробник: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; single diode; 2.8kV; If: 1.07kA; BG-PB70AT-1; screw
Type of semiconductor module: diode
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Load current: 1.07kA
Max. off-state voltage: 2.8kV
Max. forward impulse current: 41kA
Case: BG-PB70AT-1
Category: Diode modules
Description: Module: diode; single diode; 2.8kV; If: 1.07kA; BG-PB70AT-1; screw
Type of semiconductor module: diode
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Load current: 1.07kA
Max. off-state voltage: 2.8kV
Max. forward impulse current: 41kA
Case: BG-PB70AT-1
товару немає в наявності
В кошику
од. на суму грн.
IPN80R1K4P7ATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.7A; 7W; PG-SOT223; ESD
Kind of package: reel
Case: PG-SOT223
Mounting: SMD
Technology: CoolMOS™ P7
Kind of channel: enhancement
Version: ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 10nC
On-state resistance: 1.4Ω
Drain current: 2.7A
Power dissipation: 7W
Gate-source voltage: ±20V
Drain-source voltage: 800V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.7A; 7W; PG-SOT223; ESD
Kind of package: reel
Case: PG-SOT223
Mounting: SMD
Technology: CoolMOS™ P7
Kind of channel: enhancement
Version: ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 10nC
On-state resistance: 1.4Ω
Drain current: 2.7A
Power dissipation: 7W
Gate-source voltage: ±20V
Drain-source voltage: 800V
на замовлення 2847 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
6+ | 74.18 грн |
10+ | 52.97 грн |
33+ | 28.34 грн |
91+ | 26.76 грн |
1000+ | 25.81 грн |
BTS4142N |
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Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.4A; Ch: 1; N-Channel; SMD; SOT223-3
Supply voltage: 12...45V DC
Technology: Classic PROFET
Mounting: SMD
Kind of integrated circuit: high-side
Kind of output: N-Channel
Type of integrated circuit: power switch
Case: SOT223-3
Output current: 1.4A
On-state resistance: 0.15Ω
Number of channels: 1
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.4A; Ch: 1; N-Channel; SMD; SOT223-3
Supply voltage: 12...45V DC
Technology: Classic PROFET
Mounting: SMD
Kind of integrated circuit: high-side
Kind of output: N-Channel
Type of integrated circuit: power switch
Case: SOT223-3
Output current: 1.4A
On-state resistance: 0.15Ω
Number of channels: 1
на замовлення 415 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 235.32 грн |
9+ | 104.51 грн |
25+ | 98.96 грн |
IHW30N135R5XKSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.35kV; 30A; 165W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 1.35kV
Collector current: 30A
Power dissipation: 165W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 90A
Mounting: THT
Gate charge: 235nC
Kind of package: tube
Turn-off time: 680ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.35kV; 30A; 165W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 1.35kV
Collector current: 30A
Power dissipation: 165W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 90A
Mounting: THT
Gate charge: 235nC
Kind of package: tube
Turn-off time: 680ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
на замовлення 269 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3+ | 203.78 грн |
8+ | 130.63 грн |
20+ | 123.51 грн |
BGS14MPA9E6327XTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Analog multiplexers and switches
Description: IC: RF switch; SP4T; Ch: 4; MIPI; ATSLP-9-3; 1.65÷1.95VDC; 0.05÷6GHz
Interface: MIPI
Type of integrated circuit: RF switch
Mounting: SMD
Output configuration: SP4T
Application: telecommunication
Supply voltage: 1.65...1.95V DC
Number of channels: 4
Case: ATSLP-9-3
Bandwidth: 0.05...6GHz
Category: Analog multiplexers and switches
Description: IC: RF switch; SP4T; Ch: 4; MIPI; ATSLP-9-3; 1.65÷1.95VDC; 0.05÷6GHz
Interface: MIPI
Type of integrated circuit: RF switch
Mounting: SMD
Output configuration: SP4T
Application: telecommunication
Supply voltage: 1.65...1.95V DC
Number of channels: 4
Case: ATSLP-9-3
Bandwidth: 0.05...6GHz
товару немає в наявності
В кошику
од. на суму грн.
BSP76E6433 |
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Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 1.4A; Ch: 1; N-Channel; SMD; PG-SOT223-4
Mounting: SMD
Kind of integrated circuit: low-side
Kind of output: N-Channel
Case: PG-SOT223-4
Type of integrated circuit: power switch
Number of channels: 1
Output current: 1.4A
Output voltage: 42V
Technology: HITFET®
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 1.4A; Ch: 1; N-Channel; SMD; PG-SOT223-4
Mounting: SMD
Kind of integrated circuit: low-side
Kind of output: N-Channel
Case: PG-SOT223-4
Type of integrated circuit: power switch
Number of channels: 1
Output current: 1.4A
Output voltage: 42V
Technology: HITFET®
на замовлення 1956 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
5+ | 94.64 грн |
10+ | 64.13 грн |
17+ | 57.80 грн |
45+ | 54.63 грн |
100+ | 53.04 грн |
250+ | 52.25 грн |
IPB027N10N3GATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 300W; PG-TO263-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Power dissipation: 300W
Case: PG-TO263-7
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 300W; PG-TO263-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Power dissipation: 300W
Case: PG-TO263-7
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
товару немає в наявності
В кошику
од. на суму грн.
IPB027N10N5ATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 250W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Power dissipation: 250W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 5
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 250W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Power dissipation: 250W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 5
товару немає в наявності
В кошику
од. на суму грн.
IRLR3636TRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 99A; 143W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 99A
Power dissipation: 143W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 99A; 143W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 99A
Power dissipation: 143W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
на замовлення 1492 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
5+ | 104.02 грн |
10+ | 85.35 грн |
23+ | 41.80 грн |
62+ | 39.51 грн |
BTS6163D |
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Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 5.5A; Ch: 1; N-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 5.5A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-TO252-5-11
On-state resistance: 20mΩ
Supply voltage: 5.5...62V DC
Technology: Classic PROFET
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 5.5A; Ch: 1; N-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 5.5A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-TO252-5-11
On-state resistance: 20mΩ
Supply voltage: 5.5...62V DC
Technology: Classic PROFET
на замовлення 1913 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 400.73 грн |
5+ | 227.22 грн |
12+ | 214.55 грн |
250+ | 206.64 грн |
BTS441RG |
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Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 17A; Ch: 1; N-Channel; SMD; TO263-5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 17A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO263-5
On-state resistance: 15mΩ
Technology: Classic PROFET
Output voltage: 4.75...43V
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 17A; Ch: 1; N-Channel; SMD; TO263-5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 17A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO263-5
On-state resistance: 15mΩ
Technology: Classic PROFET
Output voltage: 4.75...43V
на замовлення 906 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 312.91 грн |
5+ | 222.47 грн |
12+ | 209.80 грн |
BTS716GXUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.6÷5.3A; Ch: 4; N-Channel; SMD; SO20
Kind of integrated circuit: high-side
Kind of output: N-Channel
Case: SO20
Type of integrated circuit: power switch
Turn-off time: 0.25ms
Turn-on time: 270µs
On-state resistance: 35mΩ
Output current: 2.6...5.3A
Power dissipation: 3.6W
Number of channels: 4
Supply voltage: 5.5...40V DC
Technology: Classic PROFET
Mounting: SMD
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.6÷5.3A; Ch: 4; N-Channel; SMD; SO20
Kind of integrated circuit: high-side
Kind of output: N-Channel
Case: SO20
Type of integrated circuit: power switch
Turn-off time: 0.25ms
Turn-on time: 270µs
On-state resistance: 35mΩ
Output current: 2.6...5.3A
Power dissipation: 3.6W
Number of channels: 4
Supply voltage: 5.5...40V DC
Technology: Classic PROFET
Mounting: SMD
на замовлення 749 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 260.05 грн |
5+ | 189.22 грн |
14+ | 178.93 грн |
100+ | 172.59 грн |
BTS4175SGA |
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Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.3A; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.175Ω
Supply voltage: 6...52V DC
Technology: Classic PROFET
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.3A; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.175Ω
Supply voltage: 6...52V DC
Technology: Classic PROFET
товару немає в наявності
В кошику
од. на суму грн.
IRFR5410TRPBF | ![]() |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -13A; 66W; DPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -13A
Power dissipation: 66W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -13A; 66W; DPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -13A
Power dissipation: 66W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
на замовлення 1384 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
5+ | 100.61 грн |
10+ | 63.26 грн |
25+ | 55.18 грн |
34+ | 28.11 грн |
92+ | 26.52 грн |
BSP742R |
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Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 400mA; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.4A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.25Ω
Technology: Classic PROFET
Output voltage: 40V
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 400mA; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.4A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.25Ω
Technology: Classic PROFET
Output voltage: 40V
на замовлення 1737 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3+ | 202.07 грн |
10+ | 122.72 грн |
13+ | 73.63 грн |
35+ | 69.67 грн |
BSP742RIXUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 400mA; Ch: 1; N-Channel; SMD; SO8; reel
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.4A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.25Ω
Kind of package: reel
Technology: Classic PROFET
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 400mA; Ch: 1; N-Channel; SMD; SO8; reel
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.4A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.25Ω
Kind of package: reel
Technology: Classic PROFET
товару немає в наявності
В кошику
од. на суму грн.
IKW75N60TFKSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 75A; 428W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 428W
Case: TO247-3
Mounting: THT
Gate charge: 470nC
Kind of package: tube
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 69ns
Turn-off time: 401ns
Collector current: 75A
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 75A; 428W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 428W
Case: TO247-3
Mounting: THT
Gate charge: 470nC
Kind of package: tube
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 69ns
Turn-off time: 401ns
Collector current: 75A
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
на замовлення 32 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 489.40 грн |
3+ | 357.86 грн |
8+ | 338.85 грн |
10+ | 325.39 грн |
IRFS7730TRLPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 174A; Idm: 984A; 375W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 174A
Pulsed drain current: 984A
Power dissipation: 375W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Gate charge: 407nC
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 174A; Idm: 984A; 375W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 174A
Pulsed drain current: 984A
Power dissipation: 375W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Gate charge: 407nC
Kind of package: reel
Kind of channel: enhancement
на замовлення 825 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 206.64 грн |
9+ | 105.30 грн |
25+ | 98.96 грн |
IRFR3910TRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; 52W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 52W
Technology: HEXFET®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; 52W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 52W
Technology: HEXFET®
на замовлення 1481 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
9+ | 47.75 грн |
29+ | 33.17 грн |
78+ | 31.35 грн |
500+ | 31.19 грн |
1000+ | 30.16 грн |
IRFR120ZTRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 8.7A; 35W; DPAK
Case: DPAK
Mounting: SMD
Kind of package: reel
Polarisation: unipolar
Technology: HEXFET®
Drain current: 8.7A
Kind of channel: enhancement
Power dissipation: 35W
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 8.7A; 35W; DPAK
Case: DPAK
Mounting: SMD
Kind of package: reel
Polarisation: unipolar
Technology: HEXFET®
Drain current: 8.7A
Kind of channel: enhancement
Power dissipation: 35W
Drain-source voltage: 100V
Type of transistor: N-MOSFET
товару немає в наявності
В кошику
од. на суму грн.
BSS123NH6433XTMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.15A; Idm: 0.77A; 0.5W; SOT23
Case: SOT23
Type of transistor: N-MOSFET
Mounting: SMD
Technology: OptiMOS™
Drain-source voltage: 100V
Drain current: 0.15A
Gate charge: 0.6nC
On-state resistance: 10Ω
Power dissipation: 0.5W
Pulsed drain current: 0.77A
Gate-source voltage: ±20V
Polarisation: unipolar
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.15A; Idm: 0.77A; 0.5W; SOT23
Case: SOT23
Type of transistor: N-MOSFET
Mounting: SMD
Technology: OptiMOS™
Drain-source voltage: 100V
Drain current: 0.15A
Gate charge: 0.6nC
On-state resistance: 10Ω
Power dissipation: 0.5W
Pulsed drain current: 0.77A
Gate-source voltage: ±20V
Polarisation: unipolar
Kind of channel: enhancement
на замовлення 457 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
21+ | 20.46 грн |
31+ | 12.98 грн |
38+ | 10.61 грн |
60+ | 6.68 грн |
100+ | 5.61 грн |
296+ | 3.16 грн |
IRF5803TRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -3.4A; 1.3W; TSOP6
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -3.4A
Power dissipation: 1.3W
Case: TSOP6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -3.4A; 1.3W; TSOP6
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -3.4A
Power dissipation: 1.3W
Case: TSOP6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
на замовлення 2489 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
13+ | 33.25 грн |
19+ | 21.30 грн |
50+ | 16.15 грн |
98+ | 9.58 грн |
269+ | 9.03 грн |
IPA60R190P6XKSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 34W; TO220FP
Technology: CoolMOS™ P6
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: THT
Case: TO220FP
Polarisation: unipolar
On-state resistance: 0.19Ω
Drain current: 20.2A
Gate-source voltage: ±20V
Power dissipation: 34W
Drain-source voltage: 600V
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 34W; TO220FP
Technology: CoolMOS™ P6
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: THT
Case: TO220FP
Polarisation: unipolar
On-state resistance: 0.19Ω
Drain current: 20.2A
Gate-source voltage: ±20V
Power dissipation: 34W
Drain-source voltage: 600V
Kind of package: tube
на замовлення 478 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4+ | 138.98 грн |
10+ | 98.96 грн |
13+ | 72.05 грн |
36+ | 68.09 грн |
PVDZ172NPBF | ![]() |
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Виробник: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl: 5÷25mA; 1.5A; 0÷60VDC; MOSFET
Type of relay: solid state
Contacts configuration: SPST-NO
Control current: 5...25mA
Max. operating current: 1.5A
Switched voltage: 0...60V DC
Manufacturer series: PVDZ172NPbF
Relay variant: MOSFET
On-state resistance: 0.25Ω
Mounting: THT
Case: DIP8
Operate time: 2ms
Release time: 0.5ms
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl: 5÷25mA; 1.5A; 0÷60VDC; MOSFET
Type of relay: solid state
Contacts configuration: SPST-NO
Control current: 5...25mA
Max. operating current: 1.5A
Switched voltage: 0...60V DC
Manufacturer series: PVDZ172NPbF
Relay variant: MOSFET
On-state resistance: 0.25Ω
Mounting: THT
Case: DIP8
Operate time: 2ms
Release time: 0.5ms
Operating temperature: -40...85°C
на замовлення 31 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 728.13 грн |
3+ | 461.57 грн |
6+ | 436.24 грн |
IRS21867STRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -4...4A
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 192ns
Turn-off time: 188ns
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -4...4A
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 192ns
Turn-off time: 188ns
на замовлення 1661 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4+ | 126.19 грн |
5+ | 114.80 грн |
IRFB5615PBF |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 35A; 144W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 35A
Power dissipation: 144W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 39mΩ
Mounting: THT
Gate charge: 26nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 35A; 144W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 35A
Power dissipation: 144W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 39mΩ
Mounting: THT
Gate charge: 26nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 337 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
5+ | 102.31 грн |
6+ | 72.05 грн |
10+ | 57.80 грн |
25+ | 53.04 грн |
2EDL05N06PFXUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; EiceDRIVER™; PG-DSO-8; -0.7÷0.36A
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: high-/low-side; MOSFET gate driver
Case: PG-DSO-8
Output current: -0.7...0.36A
Number of channels: 2
Supply voltage: 10...20V
Mounting: SMD
Kind of package: reel; tape
Voltage class: 600V
Technology: EiceDRIVER™
Integrated circuit features: integrated bootstrap functionality
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; EiceDRIVER™; PG-DSO-8; -0.7÷0.36A
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: high-/low-side; MOSFET gate driver
Case: PG-DSO-8
Output current: -0.7...0.36A
Number of channels: 2
Supply voltage: 10...20V
Mounting: SMD
Kind of package: reel; tape
Voltage class: 600V
Technology: EiceDRIVER™
Integrated circuit features: integrated bootstrap functionality
на замовлення 1258 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4+ | 115.96 грн |
5+ | 95.80 грн |
12+ | 82.34 грн |
31+ | 78.38 грн |
500+ | 75.21 грн |
2EDN7524FXTMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; low-side,gate driver; PG-DSO-8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; low-side
Technology: EiceDRIVER™
Case: PG-DSO-8
Output current: -5...5A
Number of channels: 2
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 4.5...20V
Voltage class: 20V
Protection: undervoltage UVP
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; low-side,gate driver; PG-DSO-8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; low-side
Technology: EiceDRIVER™
Case: PG-DSO-8
Output current: -5...5A
Number of channels: 2
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 4.5...20V
Voltage class: 20V
Protection: undervoltage UVP
на замовлення 1430 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
6+ | 72.47 грн |
20+ | 46.79 грн |
55+ | 44.26 грн |
IRLR7833TRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 140A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 140A
Power dissipation: 140W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 140A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 140A
Power dissipation: 140W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
товару немає в наявності
В кошику
од. на суму грн.
BTS462T |
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Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.3A; Ch: 1; N-Channel; SMD; TO252-5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 2.3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO252-5
Supply voltage: 5...34V DC
Technology: Classic PROFET
Output voltage: 43V
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.3A; Ch: 1; N-Channel; SMD; TO252-5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 2.3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO252-5
Supply voltage: 5...34V DC
Technology: Classic PROFET
Output voltage: 43V
на замовлення 1585 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3+ | 148.36 грн |
4+ | 126.67 грн |
8+ | 121.92 грн |
10+ | 110.84 грн |
IRF1104PBF |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 170W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 170W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 62nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 170W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 170W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 62nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 25 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
6+ | 82.70 грн |
14+ | 71.25 грн |
FP75R12KT4 |
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Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 75A
Semiconductor structure: diode/transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Case: AG-ECONO3-3
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 150A
Power dissipation: 385W
Max. off-state voltage: 1.2kV
Technology: EconoPIM™ 3
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Type of semiconductor module: IGBT
Application: Inverter
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 75A
Semiconductor structure: diode/transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Case: AG-ECONO3-3
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 150A
Power dissipation: 385W
Max. off-state voltage: 1.2kV
Technology: EconoPIM™ 3
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Type of semiconductor module: IGBT
Application: Inverter
на замовлення 6 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 16626.02 грн |
IRFB4229PBF |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 46A; 330W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 46A
Power dissipation: 330W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 46mΩ
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 46A; 330W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 46A
Power dissipation: 330W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 46mΩ
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
BAT1504WH6327XTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT323; SMD; 4V; 0.11A; 100mW
Power dissipation: 0.1W
Case: SOT323
Mounting: SMD
Load current: 0.11A
Max. off-state voltage: 4V
Semiconductor structure: double series
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT323; SMD; 4V; 0.11A; 100mW
Power dissipation: 0.1W
Case: SOT323
Mounting: SMD
Load current: 0.11A
Max. off-state voltage: 4V
Semiconductor structure: double series
Type of diode: Schottky rectifying
на замовлення 1141 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
13+ | 33.25 грн |
16+ | 25.81 грн |
18+ | 22.96 грн |
25+ | 19.56 грн |
62+ | 15.28 грн |
169+ | 14.41 грн |
BTS711L1 | ![]() |
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Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.9÷4.4A; Ch: 4; N-Channel; SMD; DSO20
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.9...4.4A
Number of channels: 4
Mounting: SMD
Case: DSO20
On-state resistance: 50mΩ
Technology: Classic PROFET
Kind of output: N-Channel
Supply voltage: 5...34V DC
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.9÷4.4A; Ch: 4; N-Channel; SMD; DSO20
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.9...4.4A
Number of channels: 4
Mounting: SMD
Case: DSO20
On-state resistance: 50mΩ
Technology: Classic PROFET
Kind of output: N-Channel
Supply voltage: 5...34V DC
на замовлення 1497 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 396.47 грн |
4+ | 256.52 грн |
10+ | 242.26 грн |
100+ | 238.31 грн |
1000+ | 235.93 грн |
IRF300P226 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; StrongIRFET™; unipolar; 300V; 53A; 313W
Type of transistor: N-MOSFET
Case: TO247AC
Kind of channel: enhancement
Kind of package: tube
Mounting: THT
Technology: StrongIRFET™
Polarisation: unipolar
Gate charge: 191nC
On-state resistance: 19mΩ
Gate-source voltage: ±20V
Drain current: 53A
Drain-source voltage: 300V
Power dissipation: 313W
Category: THT N channel transistors
Description: Transistor: N-MOSFET; StrongIRFET™; unipolar; 300V; 53A; 313W
Type of transistor: N-MOSFET
Case: TO247AC
Kind of channel: enhancement
Kind of package: tube
Mounting: THT
Technology: StrongIRFET™
Polarisation: unipolar
Gate charge: 191nC
On-state resistance: 19mΩ
Gate-source voltage: ±20V
Drain current: 53A
Drain-source voltage: 300V
Power dissipation: 313W
товару немає в наявності
В кошику
од. на суму грн.
IRF300P227 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; StrongIRFET™; unipolar; 300V; 35A; 313W
Type of transistor: N-MOSFET
Case: TO247AC
Kind of channel: enhancement
Kind of package: tube
Mounting: THT
Technology: StrongIRFET™
Polarisation: unipolar
Gate charge: 107nC
On-state resistance: 40mΩ
Gate-source voltage: ±20V
Drain current: 35A
Drain-source voltage: 300V
Power dissipation: 313W
Category: THT N channel transistors
Description: Transistor: N-MOSFET; StrongIRFET™; unipolar; 300V; 35A; 313W
Type of transistor: N-MOSFET
Case: TO247AC
Kind of channel: enhancement
Kind of package: tube
Mounting: THT
Technology: StrongIRFET™
Polarisation: unipolar
Gate charge: 107nC
On-state resistance: 40mΩ
Gate-source voltage: ±20V
Drain current: 35A
Drain-source voltage: 300V
Power dissipation: 313W
товару немає в наявності
В кошику
од. на суму грн.
IRF3315STRLPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 21A; 94W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 21A
Power dissipation: 94W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 21A; 94W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 21A
Power dissipation: 94W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
товару немає в наявності
В кошику
од. на суму грн.
IRF3703PBF |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 210A; 230W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 210A
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 230W
Technology: HEXFET®
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 210A; 230W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 210A
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 230W
Technology: HEXFET®
на замовлення 1 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 426.31 грн |
BSS123IXTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.15A; Idm: 0.77A; 0.5W; SOT23
Case: SOT23
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™
Gate charge: 0.63nC
Drain current: 0.15A
Power dissipation: 0.5W
Pulsed drain current: 0.77A
On-state resistance: 10Ω
Gate-source voltage: ±20V
Drain-source voltage: 100V
Polarisation: unipolar
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.15A; Idm: 0.77A; 0.5W; SOT23
Case: SOT23
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™
Gate charge: 0.63nC
Drain current: 0.15A
Power dissipation: 0.5W
Pulsed drain current: 0.77A
On-state resistance: 10Ω
Gate-source voltage: ±20V
Drain-source voltage: 100V
Polarisation: unipolar
Kind of channel: enhancement
на замовлення 164 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
28+ | 15.35 грн |
46+ | 8.79 грн |
75+ | 5.32 грн |
100+ | 4.35 грн |
BSS123NH6327XTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.15A; Idm: 0.77A; 0.5W; SOT23
Case: SOT23
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™
Gate charge: 0.6nC
Drain current: 0.15A
Power dissipation: 0.5W
Pulsed drain current: 0.77A
On-state resistance: 10Ω
Gate-source voltage: ±20V
Drain-source voltage: 100V
Polarisation: unipolar
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.15A; Idm: 0.77A; 0.5W; SOT23
Case: SOT23
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™
Gate charge: 0.6nC
Drain current: 0.15A
Power dissipation: 0.5W
Pulsed drain current: 0.77A
On-state resistance: 10Ω
Gate-source voltage: ±20V
Drain-source voltage: 100V
Polarisation: unipolar
Kind of channel: enhancement
на замовлення 20471 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
56+ | 7.67 грн |
66+ | 6.02 грн |
71+ | 5.62 грн |
100+ | 4.34 грн |
250+ | 3.90 грн |
281+ | 3.32 грн |
772+ | 3.14 грн |
3000+ | 3.06 грн |
BSZ110N06NS3GATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 20A; Idm: 80A; 50W; PG-TSDSON-8
Case: PG-TSDSON-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
On-state resistance: 11mΩ
Power dissipation: 50W
Drain current: 20A
Gate-source voltage: ±20V
Drain-source voltage: 60V
Pulsed drain current: 80A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 20A; Idm: 80A; 50W; PG-TSDSON-8
Case: PG-TSDSON-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
On-state resistance: 11mΩ
Power dissipation: 50W
Drain current: 20A
Gate-source voltage: ±20V
Drain-source voltage: 60V
Pulsed drain current: 80A
товару немає в наявності
В кошику
од. на суму грн.
BSZ110N08NS5ATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 40A; 50W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 40A
Power dissipation: 50W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 5
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 40A; 50W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 40A
Power dissipation: 50W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 5
товару немає в наявності
В кошику
од. на суму грн.
BCR133SH6327 |
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Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; SOT363; R1: 10kΩ
Kind of transistor: BRT
Case: SOT363
Mounting: SMD
Type of transistor: NPN x2
Collector current: 0.1A
Power dissipation: 0.25W
Collector-emitter voltage: 50V
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Frequency: 130MHz
Polarisation: bipolar
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; SOT363; R1: 10kΩ
Kind of transistor: BRT
Case: SOT363
Mounting: SMD
Type of transistor: NPN x2
Collector current: 0.1A
Power dissipation: 0.25W
Collector-emitter voltage: 50V
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Frequency: 130MHz
Polarisation: bipolar
на замовлення 363 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
45+ | 9.55 грн |
67+ | 5.94 грн |
205+ | 4.58 грн |
IR2130SPBF | ![]() |
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Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO28-W
Output current: -420...200mA
Power: 1.6W
Number of channels: 6
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 675ns
Turn-off time: 475ns
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO28-W
Output current: -420...200mA
Power: 1.6W
Number of channels: 6
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 675ns
Turn-off time: 475ns
на замовлення 58 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 451.89 грн |
3+ | 352.31 грн |
8+ | 333.31 грн |
10+ | 324.60 грн |
25+ | 320.64 грн |
IR2133SPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO28-W
Output current: -420...200mA
Power: 1.6W
Number of channels: 6
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 0.6/1.2kV
Turn-on time: 750ns
Turn-off time: 700ns
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO28-W
Output current: -420...200mA
Power: 1.6W
Number of channels: 6
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 0.6/1.2kV
Turn-on time: 750ns
Turn-off time: 700ns
на замовлення 14 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 572.96 грн |
3+ | 441.78 грн |
6+ | 417.23 грн |
IRFB4321PBF | ![]() |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 83A; 330W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 83A
Power dissipation: 330W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 15mΩ
Mounting: THT
Gate charge: 71nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 83A; 330W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 83A
Power dissipation: 330W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 15mΩ
Mounting: THT
Gate charge: 71nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 49 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 214.01 грн |
9+ | 109.26 грн |
24+ | 102.92 грн |
IRFB4332PbF |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 60A; 390W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 60A
Power dissipation: 390W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 33mΩ
Mounting: THT
Gate charge: 99nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 60A; 390W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 60A
Power dissipation: 390W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 33mΩ
Mounting: THT
Gate charge: 99nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 53 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3+ | 181.61 грн |
8+ | 130.63 грн |
20+ | 123.51 грн |
50+ | 118.76 грн |
SPA06N80C3 |
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 6A; 39W; PG-TO220-3-FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6A
Power dissipation: 39W
Case: PG-TO220-3-FP
Gate-source voltage: ±20V
On-state resistance: 0.9Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 6A; 39W; PG-TO220-3-FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6A
Power dissipation: 39W
Case: PG-TO220-3-FP
Gate-source voltage: ±20V
On-state resistance: 0.9Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 16 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3+ | 174.79 грн |
10+ | 118.76 грн |
11+ | 92.63 грн |
SPP06N80C3 | ![]() |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 6A; 83W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6A
Power dissipation: 83W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.9Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 6A; 83W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6A
Power dissipation: 83W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.9Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 94 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3+ | 152.80 грн |
8+ | 118.76 грн |
22+ | 112.42 грн |
AIHD10N60RFATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 10A; 150W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 150W
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Collector-emitter voltage: 600V
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Gate charge: 64nC
Turn-on time: 27ns
Turn-off time: 186ns
Collector current: 10A
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 10A; 150W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 150W
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Collector-emitter voltage: 600V
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Gate charge: 64nC
Turn-on time: 27ns
Turn-off time: 186ns
Collector current: 10A
товару немає в наявності
В кошику
од. на суму грн.
IRS21094PBF | ![]() |
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Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.6W
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP14
Output current: -600...290mA
Power: 1.6W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 850ns
Turn-off time: 235ns
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.6W
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP14
Output current: -600...290mA
Power: 1.6W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 850ns
Turn-off time: 235ns
на замовлення 96 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
5+ | 83.92 грн |