Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (149596) > Сторінка 2455 з 2494
Фото | Назва | Виробник | Інформація |
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IPA060N06NXKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 45A; 33W; TO220FP Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 60V Drain current: 45A Power dissipation: 33W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 6mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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IRF9Z24NPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -55V; -12A; 45W; TO220AB Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -55V Drain current: -12A Power dissipation: 45W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 0.175Ω Mounting: THT Gate charge: 12.7nC Kind of package: tube Kind of channel: enhancement Technology: HEXFET® |
на замовлення 1232 шт: термін постачання 21-30 дні (днів) |
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IRF9Z24NSTRLPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -55V; -8.5A; Idm: -48A; 45W; D2PAK Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -55V Drain current: -8.5A Pulsed drain current: -48A Power dissipation: 45W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 0.175Ω Mounting: SMD Kind of channel: enhancement Technology: HEXFET® |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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BAT6404E6327HTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: Schottky rectifying; SOT23; SMD; 40V; 0.25A; 250mW Type of diode: Schottky rectifying Case: SOT23 Mounting: SMD Max. off-state voltage: 40V Load current: 0.25A Semiconductor structure: double series Max. forward impulse current: 0.8A Power dissipation: 0.25W |
на замовлення 5039 шт: термін постачання 21-30 дні (днів) |
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IRLR3410TRPBF | INFINEON TECHNOLOGIES |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 100V; 15A; 52W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 15A Power dissipation: 52W Case: DPAK Mounting: SMD Kind of package: reel Kind of channel: enhancement Features of semiconductor devices: logic level |
на замовлення 1644 шт: термін постачання 21-30 дні (днів) |
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IRLR3410TRRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 15A; 52W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 15A Power dissipation: 52W Case: DPAK Mounting: SMD Kind of package: reel Kind of channel: enhancement Features of semiconductor devices: logic level |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BSS127H6327XTSA2 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 0.021A; 0.5W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 21mA Power dissipation: 0.5W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 500Ω Mounting: SMD Kind of channel: enhancement Technology: SIPMOS™ |
на замовлення 3361 шт: термін постачання 21-30 дні (днів) |
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BAR6402VH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: switching; 150V; 100mA; 250mW; SC79; single diode; reel,tape Semiconductor structure: single diode Features of semiconductor devices: PIN; RF Kind of package: reel; tape Case: SC79 Mounting: SMD Type of diode: switching Load current: 0.1A Power dissipation: 0.25W Max. forward voltage: 1.1V Max. off-state voltage: 150V |
на замовлення 2000 шт: термін постачання 21-30 дні (днів) |
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IHW20N120R5XKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.2kV; 20A; 144W; TO247-3 Type of transistor: IGBT Technology: TRENCHSTOP™ RC Power dissipation: 144W Case: TO247-3 Mounting: THT Gate charge: 170nC Kind of package: tube Collector-emitter voltage: 1.2kV Features of semiconductor devices: reverse conducting IGBT (RC-IGBT) Turn-off time: 440ns Collector current: 20A Gate-emitter voltage: ±20V Pulsed collector current: 60A |
на замовлення 39 шт: термін постачання 21-30 дні (днів) |
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IRF7317TRPBF | INFINEON TECHNOLOGIES |
![]() ![]() Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 6.6/-5.3A; 2W; SO8 Type of transistor: N/P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 20/-20V Drain current: 6.6/-5.3A Power dissipation: 2W Case: SO8 Gate-source voltage: ±12V On-state resistance: 29/58mΩ Mounting: SMD Kind of package: reel Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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IRS2110SPBF | INFINEON TECHNOLOGIES |
![]() ![]() Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO16 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO16 Output current: -2...2A Power: 1.25W Number of channels: 2 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Voltage class: 500V Turn-on time: 155ns Turn-off time: 137ns |
на замовлення 45 шт: термін постачання 21-30 дні (днів) |
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IRS2118PBF | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; single transistor; high-side,gate driver; DIP8; 1W Type of integrated circuit: driver Topology: single transistor Kind of integrated circuit: gate driver; high-side Case: DIP8 Output current: -600...290mA Power: 1W Number of channels: 1 Supply voltage: 10...20V DC Mounting: THT Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V Turn-on time: 0.2µs Turn-off time: 140ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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IRS2118SPBF | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; single transistor; high-side,gate driver; SO8; 625mW Type of integrated circuit: driver Topology: single transistor Kind of integrated circuit: gate driver; high-side Case: SO8 Output current: -600...290mA Power: 625mW Number of channels: 1 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V Turn-on time: 0.2µs Turn-off time: 140ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BCR116SH6327 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; SOT363; R1: 4.7kΩ Case: SOT363 Mounting: SMD Type of transistor: NPN x2 Collector current: 0.1A Power dissipation: 0.25W Collector-emitter voltage: 50V Base resistor: 4.7kΩ Base-emitter resistor: 47kΩ Frequency: 150MHz Polarisation: bipolar Kind of transistor: BRT |
на замовлення 735 шт: термін постачання 21-30 дні (днів) |
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BAS16UE6327HTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: switching; SMD; 85V; 0.2A; 4ns; SC74; Ufmax: 1.25V; Ifsm: 4.5A Type of diode: switching Mounting: SMD Max. off-state voltage: 85V Load current: 0.2A Reverse recovery time: 4ns Semiconductor structure: triple independent Case: SC74 Max. forward voltage: 1.25V Max. forward impulse current: 4.5A Power dissipation: 0.25W Kind of package: reel; tape Features of semiconductor devices: ultrafast switching |
на замовлення 4430 шт: термін постачання 21-30 дні (днів) |
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BAV70UE6327HTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: switching; SMD; 85V; 0.2A; SC74; 250mW; reel,tape Type of diode: switching Mounting: SMD Max. off-state voltage: 85V Load current: 0.2A Semiconductor structure: common cathode; double x2 Case: SC74 Power dissipation: 0.25W Kind of package: reel; tape Features of semiconductor devices: ultrafast switching |
на замовлення 8659 шт: термін постачання 21-30 дні (днів) |
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BAV99UE6327HTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: switching; SMD; 85V; 0.2A; SC74; 250mW; reel,tape Type of diode: switching Mounting: SMD Max. off-state voltage: 85V Load current: 0.2A Semiconductor structure: double series x2 Case: SC74 Kind of package: reel; tape Features of semiconductor devices: ultrafast switching Power dissipation: 0.25W |
на замовлення 2999 шт: термін постачання 21-30 дні (днів) |
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BAS4004E6327HTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.12A; 250mW Load current: 0.12A Power dissipation: 0.25W Max. forward impulse current: 0.2A Max. off-state voltage: 40V Semiconductor structure: double series Case: SOT23 Mounting: SMD Type of diode: Schottky switching |
на замовлення 7235 шт: термін постачання 21-30 дні (днів) |
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BAS4005E6327HTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.12A; 250mW Case: SOT23 Mounting: SMD Load current: 0.12A Max. forward impulse current: 0.2A Power dissipation: 0.25W Max. off-state voltage: 40V Semiconductor structure: common cathode; double Type of diode: Schottky switching |
на замовлення 2500 шт: термін постачання 21-30 дні (днів) |
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BAS4007E6327HTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: Schottky switching; SOT143; SMD; 40V; 0.12A; 250mW Case: SOT143 Mounting: SMD Type of diode: Schottky switching Load current: 0.12A Max. forward impulse current: 0.2A Power dissipation: 0.25W Max. off-state voltage: 40V Semiconductor structure: double independent |
на замовлення 895 шт: термін постачання 21-30 дні (днів) |
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BAT1503WE6327HTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: Schottky rectifying; SOD323; SMD; 4V; 0.11A; 100mW Type of diode: Schottky rectifying Mounting: SMD Case: SOD323 Power dissipation: 0.1W Load current: 0.11A Semiconductor structure: single diode Max. off-state voltage: 4V |
на замовлення 3560 шт: термін постачання 21-30 дні (днів) |
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SMBTA42E6327HTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: NPN; bipolar; 300V; 0.5A; 0.36W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 300V Collector current: 0.5A Power dissipation: 0.36W Case: SOT23 Mounting: SMD Frequency: 70MHz |
на замовлення 3128 шт: термін постачання 21-30 дні (днів) |
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BC856UE6327 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: PNP x2; bipolar; 65V; 0.1A; 0.25W; SC74 Type of transistor: PNP x2 Polarisation: bipolar Collector-emitter voltage: 65V Collector current: 0.1A Power dissipation: 0.25W Case: SC74 Mounting: SMD Frequency: 250MHz |
на замовлення 968 шт: термін постачання 21-30 дні (днів) |
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BFR106E6327 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: NPN; bipolar; RF; 16V; 0.21A; 0.7W; SOT23 Mounting: SMD Collector current: 0.21A Power dissipation: 0.7W Collector-emitter voltage: 16V Frequency: 5GHz Kind of package: reel; tape Polarisation: bipolar Case: SOT23 Type of transistor: NPN Kind of transistor: RF |
на замовлення 1593 шт: термін постачання 21-30 дні (днів) |
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BFR92PE6327 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: NPN; bipolar; RF; 15V; 45mA; 0.28W; SOT23 Type of transistor: NPN Polarisation: bipolar Kind of transistor: RF Collector-emitter voltage: 15V Collector current: 45mA Power dissipation: 0.28W Case: SOT23 Mounting: SMD Kind of package: reel; tape Frequency: 5GHz |
на замовлення 7895 шт: термін постачання 21-30 дні (днів) |
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BSR302NL6327HTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 3.7A; 0.5W; SC59 Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Technology: OptiMOS™ 2 Polarisation: unipolar On-state resistance: 36mΩ Power dissipation: 0.5W Drain current: 3.7A Gate-source voltage: ±20V Drain-source voltage: 30V Case: SC59 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BFP193E6327 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: NPN; bipolar; RF; 12V; 80mA; 0.58W; SOT143 Polarisation: bipolar Case: SOT143 Type of transistor: NPN Mounting: SMD Kind of transistor: RF Collector current: 80mA Power dissipation: 0.58W Collector-emitter voltage: 12V Frequency: 8GHz Current gain: 70...140 Kind of package: reel; tape |
на замовлення 3752 шт: термін постачання 21-30 дні (днів) |
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BCR133E6327 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 10kΩ Type of transistor: NPN Collector current: 0.1A Power dissipation: 0.2W Collector-emitter voltage: 50V Base resistor: 10kΩ Base-emitter resistor: 10kΩ Frequency: 130MHz Polarisation: bipolar Kind of transistor: BRT Case: SOT23 Mounting: SMD |
на замовлення 2875 шт: термін постачання 21-30 дні (днів) |
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BCR158E6327 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 2.2kΩ Mounting: SMD Polarisation: bipolar Kind of transistor: BRT Case: SOT23 Type of transistor: PNP Collector current: 0.1A Power dissipation: 0.2W Collector-emitter voltage: 50V Base resistor: 2.2kΩ Base-emitter resistor: 47kΩ Frequency: 200MHz |
на замовлення 6783 шт: термін постачання 21-30 дні (днів) |
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BAR6403WE6327HTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: switching; 50V; 100mA; 250mW; SOD323; single diode Semiconductor structure: single diode Features of semiconductor devices: PIN; RF Kind of package: reel; tape Case: SOD323 Mounting: SMD Type of diode: switching Load current: 0.1A Power dissipation: 0.25W Max. forward voltage: 1.2V Max. off-state voltage: 50V |
на замовлення 535 шт: термін постачання 21-30 дні (днів) |
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BAR6404E6327HTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: switching; 150V; 100mA; 250mW; SOT23; double series Semiconductor structure: double series Features of semiconductor devices: PIN; RF Kind of package: reel; tape Case: SOT23 Mounting: SMD Type of diode: switching Load current: 0.1A Power dissipation: 0.25W Max. forward voltage: 1.1V Max. off-state voltage: 150V |
на замовлення 1473 шт: термін постачання 21-30 дні (днів) |
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BAR66E6327HTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: switching; 150V; 200mA; 250mW; SOT23; double series Semiconductor structure: double series Features of semiconductor devices: PIN Kind of package: reel; tape Case: SOT23 Mounting: SMD Type of diode: switching Load current: 0.2A Power dissipation: 0.25W Max. forward voltage: 1.2V Max. forward impulse current: 12A Max. off-state voltage: 150V |
на замовлення 4510 шт: термін постачання 21-30 дні (днів) |
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BA592E6327HTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: switching; 35V; 100mA; SOD323; single diode; reel,tape Type of diode: switching Max. off-state voltage: 35V Load current: 0.1A Case: SOD323 Mounting: SMD Semiconductor structure: single diode Features of semiconductor devices: PIN; RF Kind of package: reel; tape Leakage current: 20nA Capacitance: 0.6...1.4pF |
на замовлення 770 шт: термін постачання 21-30 дні (днів) |
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BAR6303WE6327HTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: switching; 50V; 100mA; 250mW; SOD323; single diode Semiconductor structure: single diode Features of semiconductor devices: PIN; RF Kind of package: reel; tape Case: SOD323 Mounting: SMD Type of diode: switching Load current: 0.1A Power dissipation: 0.25W Max. forward voltage: 1.2V Max. off-state voltage: 50V |
на замовлення 2144 шт: термін постачання 21-30 дні (днів) |
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BC817UPNE6327HTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: NPN / PNP; bipolar; complementary pair; 45V; 0.5A Type of transistor: NPN / PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.5A Power dissipation: 0.33W Case: SC74 Mounting: SMD Frequency: 170MHz Kind of transistor: complementary pair |
на замовлення 7003 шт: термін постачання 21-30 дні (днів) |
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BAS3007ARPPE6327HTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Bridge rectifier: single-phase; 30V; If: 0.9A; Ifsm: 5A; SOT143; SMT Case: SOT143 Max. forward impulse current: 5A Load current: 0.9A Features of semiconductor devices: Schottky Max. off-state voltage: 30V Type of bridge rectifier: single-phase Kind of package: reel; tape Electrical mounting: SMT |
на замовлення 3268 шт: термін постачання 21-30 дні (днів) |
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BAS4002ARPPE6327HTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Bridge rectifier: single-phase; 40V; If: 0.2A; Ifsm: 2A; SOT143; SMT Type of bridge rectifier: single-phase Electrical mounting: SMT Load current: 0.2A Max. forward impulse current: 2A Max. off-state voltage: 40V Kind of package: reel; tape Case: SOT143 Features of semiconductor devices: Schottky |
на замовлення 1873 шт: термін постачання 21-30 дні (днів) |
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BB640E6327HTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: varicap; 30V; 20mA; SOD323; single diode; reel,tape Mounting: SMD Kind of package: reel; tape Features of semiconductor devices: RF Semiconductor structure: single diode Case: SOD323 Type of diode: varicap Capacitance: 2.8...76pF Leakage current: 0.2µA Load current: 20mA Max. off-state voltage: 30V |
на замовлення 1950 шт: термін постачання 21-30 дні (днів) |
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IRLML9303TRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -2.3A; 1.25W; SOT23 Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -30V Drain current: -2.3A Power dissipation: 1.25W Case: SOT23 Mounting: SMD Kind of channel: enhancement Features of semiconductor devices: logic level |
на замовлення 5861 шт: термін постачання 21-30 дні (днів) |
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IPD70R360P7SAUMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 700V; 7.5A; 59.5W; PG-TO252-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 700V Drain current: 7.5A Power dissipation: 59.5W Case: PG-TO252-3 Gate-source voltage: ±16V On-state resistance: 0.36Ω Mounting: SMD Kind of channel: enhancement |
на замовлення 1544 шт: термін постачання 21-30 дні (днів) |
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IR1161LTRPBF | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; flyback,push-pull,resonant LLC; gate driver; SOT23-5 Case: SOT23-5 Mounting: SMD Kind of package: reel; tape Kind of integrated circuit: gate driver Application: SMPS Operating temperature: -40...125°C Output current: -2.5...1A Power: 590mW Supply voltage: 4.75...18V DC Voltage class: 200V Type of integrated circuit: driver Topology: flyback; push-pull; resonant LLC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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IR11688STRPBF | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; flyback,push-pull,resonant LLC; gate driver; SO8 Case: SO8 Mounting: SMD Kind of package: reel; tape Kind of integrated circuit: gate driver Application: SMPS Operating temperature: -40...125°C Output current: -4...1A Power: 625mW Supply voltage: 4.75...18V DC Voltage class: 200V Type of integrated circuit: driver Topology: flyback; push-pull; resonant LLC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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IR1169STRPBF | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; flyback,push-pull,resonant LLC; gate driver; SO8 Case: SO8 Mounting: SMD Kind of package: reel; tape Kind of integrated circuit: gate driver Application: SMPS Operating temperature: -40...125°C Output current: -4...1A Power: 625mW Supply voltage: 11...19V DC Voltage class: 200V Type of integrated circuit: driver Topology: flyback; push-pull; resonant LLC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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ICE5QR1070AZXKLA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: PMIC; PWM controller; 400mA; 20kHz; Ch: 1; DIP7; flyback; 0÷80% Operating voltage: 10...25.5V DC Mounting: THT Operating temperature: -40...150°C Case: DIP7 Topology: flyback Type of integrated circuit: PMIC Kind of integrated circuit: PWM controller Application: SMPS Duty cycle factor: 0...80% Output current: 0.4A Power: 58/32W Number of channels: 1 Input voltage: 80...265V Breakdown voltage: 700V Frequency: 20kHz |
на замовлення 70 шт: термін постачання 21-30 дні (днів) |
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BFP740H6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: NPN; SiGe: C; bipolar; HBT,RF; 13V; 45mA; 0.16W; SOT343 Mounting: SMD Case: SOT343 Kind of package: reel; tape Frequency: 44GHz Kind of transistor: HBT; RF Type of transistor: NPN Technology: SiGe:C Collector current: 45mA Power dissipation: 0.16W Collector-emitter voltage: 13V Current gain: 160...400 Polarisation: bipolar |
на замовлення 2468 шт: термін постачання 21-30 дні (днів) |
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BTS50055-1TMB | INFINEON TECHNOLOGIES |
![]() Description: IC: power switch; high-side; 55A; Ch: 1; N-Channel; THT Case: PG-TO220-7-11 Technology: High Current PROFET Kind of integrated circuit: high-side Kind of output: N-Channel Mounting: THT On-state resistance: 4.4mΩ Number of channels: 1 Supply voltage: 5...34V DC Output current: 55A Type of integrated circuit: power switch |
на замовлення 69 шт: термін постачання 21-30 дні (днів) |
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BTS50080-1TMB | INFINEON TECHNOLOGIES |
![]() Description: IC: power switch; high-side; 9.5A; Ch: 1; N-Channel; THT Case: PG-TO220-7-12 Technology: High Current PROFET Kind of integrated circuit: high-side Kind of output: N-Channel Mounting: THT On-state resistance: 7mΩ Number of channels: 1 Supply voltage: 5.5...38V DC Output current: 9.5A Type of integrated circuit: power switch |
на замовлення 28 шт: термін постачання 21-30 дні (днів) |
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BFR182WH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: NPN; bipolar; RF; 12V; 35mA; 0.25W; SOT323 Type of transistor: NPN Polarisation: bipolar Power dissipation: 0.25W Case: SOT323 Mounting: SMD Collector-emitter voltage: 12V Frequency: 8GHz Kind of transistor: RF Kind of package: reel; tape Collector current: 35mA |
на замовлення 877 шт: термін постачання 21-30 дні (днів) |
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BCP5616H6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: NPN; bipolar; 80V; 1A; 2W; SOT223 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 1A Power dissipation: 2W Case: SOT223 Mounting: SMD Frequency: 100MHz |
на замовлення 535 шт: термін постачання 21-30 дні (днів) |
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BCX53H6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: PNP; bipolar; 80V; 1A; 2W; SOT89 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 1A Power dissipation: 2W Case: SOT89 Mounting: SMD Frequency: 125MHz |
на замовлення 454 шт: термін постачання 21-30 дні (днів) |
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BCX5610H6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: NPN; bipolar; 80V; 1A; 2W; SOT89 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 1A Power dissipation: 2W Case: SOT89 Mounting: SMD Frequency: 100MHz |
на замовлення 1730 шт: термін постачання 21-30 дні (днів) |
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BCX56H6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: NPN; bipolar; 80V; 1A; 2W; SOT89 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 1A Power dissipation: 2W Case: SOT89 Mounting: SMD Frequency: 100MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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IRF5802TRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 150V; 0.9A; 2W; TSOP6 Case: TSOP6 Mounting: SMD Kind of package: reel Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 0.9A Power dissipation: 2W Technology: HEXFET® Kind of channel: enhancement |
на замовлення 1771 шт: термін постачання 21-30 дні (днів) |
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IRLMS2002TRPBF | INFINEON TECHNOLOGIES |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 20V; 6.5A; 2W; TSOP6 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 20V Drain current: 6.5A Power dissipation: 2W Case: TSOP6 Mounting: SMD Kind of package: reel Kind of channel: enhancement Features of semiconductor devices: logic level |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BSL207SPH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -6A; 2W; PG-TSOP-6 Case: PG-TSOP-6 Mounting: SMD Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -6A On-state resistance: 41mΩ Power dissipation: 2W Gate-source voltage: ±12V Technology: OptiMOS™ P Kind of channel: enhancement |
на замовлення 2850 шт: термін постачання 21-30 дні (днів) |
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IR2132JPBF | INFINEON TECHNOLOGIES |
![]() ![]() Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge Type of integrated circuit: driver Topology: IGBT three-phase bridge; MOSFET three-phase bridge Kind of integrated circuit: gate driver; high-/low-side Case: PLCC44 Output current: -420...200mA Number of channels: 6 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V Turn-off time: 475ns Turn-on time: 675ns Power: 2W |
на замовлення 26 шт: термін постачання 21-30 дні (днів) |
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IR2135JPBF | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge Type of integrated circuit: driver Topology: IGBT three-phase bridge; MOSFET three-phase bridge Kind of integrated circuit: gate driver; high-/low-side Case: PLCC44 Output current: -420...200mA Power: 2W Number of channels: 6 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Voltage class: 0.6/1.2kV Turn-on time: 750ns Turn-off time: 700ns |
на замовлення 20 шт: термін постачання 21-30 дні (днів) |
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IR2233JPBF | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge Type of integrated circuit: driver Topology: IGBT three-phase bridge; MOSFET three-phase bridge Kind of integrated circuit: gate driver; high-/low-side Case: PLCC44 Output current: -420...200mA Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Number of channels: 6 Power: 2W Voltage class: 1.2kV Integrated circuit features: charge pump; dead time; integrated bootstrap functionality Kind of package: tube Turn-off time: 700ns Turn-on time: 750ns |
на замовлення 28 шт: термін постачання 21-30 дні (днів) |
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IRFB7434PBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 317A; 294W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 317A Power dissipation: 294W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 1.6mΩ Mounting: THT Gate charge: 216nC Kind of package: tube Kind of channel: enhancement Trade name: StrongIRFET |
на замовлення 110 шт: термін постачання 21-30 дні (днів) |
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IR2181SPBF | INFINEON TECHNOLOGIES |
![]() ![]() Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO8 Output current: -2.3...1.9A Power: 625mW Number of channels: 2 Supply voltage: 10...20V DC Integrated circuit features: charge pump; integrated bootstrap functionality Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V Turn-on time: 180ns Turn-off time: 0.22µs Protection: undervoltage UVP |
на замовлення 80 шт: термін постачання 21-30 дні (днів) |
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IPA060N06NXKSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 45A; 33W; TO220FP
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 45A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 45A; 33W; TO220FP
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 45A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
IRF9Z24NPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -12A; 45W; TO220AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -12A
Power dissipation: 45W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.175Ω
Mounting: THT
Gate charge: 12.7nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -12A; 45W; TO220AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -12A
Power dissipation: 45W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.175Ω
Mounting: THT
Gate charge: 12.7nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
на замовлення 1232 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
11+ | 39.22 грн |
42+ | 22.48 грн |
114+ | 21.30 грн |
IRF9Z24NSTRLPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -8.5A; Idm: -48A; 45W; D2PAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -8.5A
Pulsed drain current: -48A
Power dissipation: 45W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 0.175Ω
Mounting: SMD
Kind of channel: enhancement
Technology: HEXFET®
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -8.5A; Idm: -48A; 45W; D2PAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -8.5A
Pulsed drain current: -48A
Power dissipation: 45W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 0.175Ω
Mounting: SMD
Kind of channel: enhancement
Technology: HEXFET®
товару немає в наявності
В кошику
од. на суму грн.
BAT6404E6327HTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT23; SMD; 40V; 0.25A; 250mW
Type of diode: Schottky rectifying
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.25A
Semiconductor structure: double series
Max. forward impulse current: 0.8A
Power dissipation: 0.25W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT23; SMD; 40V; 0.25A; 250mW
Type of diode: Schottky rectifying
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.25A
Semiconductor structure: double series
Max. forward impulse current: 0.8A
Power dissipation: 0.25W
на замовлення 5039 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
62+ | 6.98 грн |
79+ | 5.07 грн |
82+ | 4.83 грн |
104+ | 3.83 грн |
250+ | 3.46 грн |
312+ | 2.99 грн |
857+ | 2.83 грн |
3000+ | 2.76 грн |
IRLR3410TRPBF | ![]() |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; 52W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Power dissipation: 52W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; 52W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Power dissipation: 52W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
на замовлення 1644 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
11+ | 39.22 грн |
13+ | 31.67 грн |
25+ | 29.45 грн |
50+ | 27.79 грн |
53+ | 17.89 грн |
144+ | 16.94 грн |
IRLR3410TRRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; 52W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Power dissipation: 52W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; 52W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Power dissipation: 52W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
товару немає в наявності
В кошику
од. на суму грн.
BSS127H6327XTSA2 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.021A; 0.5W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 21mA
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 500Ω
Mounting: SMD
Kind of channel: enhancement
Technology: SIPMOS™
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.021A; 0.5W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 21mA
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 500Ω
Mounting: SMD
Kind of channel: enhancement
Technology: SIPMOS™
на замовлення 3361 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
16+ | 27.28 грн |
22+ | 18.68 грн |
27+ | 15.20 грн |
50+ | 12.90 грн |
100+ | 10.93 грн |
143+ | 6.57 грн |
391+ | 6.18 грн |
3000+ | 5.94 грн |
BAR6402VH6327XTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 150V; 100mA; 250mW; SC79; single diode; reel,tape
Semiconductor structure: single diode
Features of semiconductor devices: PIN; RF
Kind of package: reel; tape
Case: SC79
Mounting: SMD
Type of diode: switching
Load current: 0.1A
Power dissipation: 0.25W
Max. forward voltage: 1.1V
Max. off-state voltage: 150V
Category: Diodes - others
Description: Diode: switching; 150V; 100mA; 250mW; SC79; single diode; reel,tape
Semiconductor structure: single diode
Features of semiconductor devices: PIN; RF
Kind of package: reel; tape
Case: SC79
Mounting: SMD
Type of diode: switching
Load current: 0.1A
Power dissipation: 0.25W
Max. forward voltage: 1.1V
Max. off-state voltage: 150V
на замовлення 2000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
21+ | 20.46 грн |
34+ | 11.88 грн |
100+ | 7.13 грн |
154+ | 6.10 грн |
250+ | 5.78 грн |
424+ | 5.70 грн |
650+ | 5.54 грн |
IHW20N120R5XKSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.2kV; 20A; 144W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Power dissipation: 144W
Case: TO247-3
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Collector-emitter voltage: 1.2kV
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Turn-off time: 440ns
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.2kV; 20A; 144W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Power dissipation: 144W
Case: TO247-3
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Collector-emitter voltage: 1.2kV
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Turn-off time: 440ns
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
на замовлення 39 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 261.75 грн |
6+ | 185.26 грн |
10+ | 168.64 грн |
IRF7317TRPBF | ![]() |
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Виробник: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 6.6/-5.3A; 2W; SO8
Type of transistor: N/P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 6.6/-5.3A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 29/58mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 6.6/-5.3A; 2W; SO8
Type of transistor: N/P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 6.6/-5.3A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 29/58mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
IRS2110SPBF | ![]() |
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Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO16
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO16
Output current: -2...2A
Power: 1.25W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 500V
Turn-on time: 155ns
Turn-off time: 137ns
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO16
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO16
Output current: -2...2A
Power: 1.25W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 500V
Turn-on time: 155ns
Turn-off time: 137ns
на замовлення 45 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 274.54 грн |
5+ | 194.76 грн |
14+ | 184.47 грн |
IRS2118PBF |
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Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; DIP8; 1W
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Case: DIP8
Output current: -600...290mA
Power: 1W
Number of channels: 1
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 0.2µs
Turn-off time: 140ns
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; DIP8; 1W
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Case: DIP8
Output current: -600...290mA
Power: 1W
Number of channels: 1
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 0.2µs
Turn-off time: 140ns
товару немає в наявності
В кошику
од. на суму грн.
IRS2118SPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; SO8; 625mW
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Case: SO8
Output current: -600...290mA
Power: 625mW
Number of channels: 1
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 0.2µs
Turn-off time: 140ns
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; SO8; 625mW
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Case: SO8
Output current: -600...290mA
Power: 625mW
Number of channels: 1
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 0.2µs
Turn-off time: 140ns
товару немає в наявності
В кошику
од. на суму грн.
BCR116SH6327 |
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Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; SOT363; R1: 4.7kΩ
Case: SOT363
Mounting: SMD
Type of transistor: NPN x2
Collector current: 0.1A
Power dissipation: 0.25W
Collector-emitter voltage: 50V
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Frequency: 150MHz
Polarisation: bipolar
Kind of transistor: BRT
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; SOT363; R1: 4.7kΩ
Case: SOT363
Mounting: SMD
Type of transistor: NPN x2
Collector current: 0.1A
Power dissipation: 0.25W
Collector-emitter voltage: 50V
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Frequency: 150MHz
Polarisation: bipolar
Kind of transistor: BRT
на замовлення 735 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
46+ | 9.38 грн |
59+ | 6.73 грн |
100+ | 5.30 грн |
178+ | 5.23 грн |
250+ | 5.15 грн |
491+ | 4.91 грн |
BAS16UE6327HTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; 4ns; SC74; Ufmax: 1.25V; Ifsm: 4.5A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: triple independent
Case: SC74
Max. forward voltage: 1.25V
Max. forward impulse current: 4.5A
Power dissipation: 0.25W
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; 4ns; SC74; Ufmax: 1.25V; Ifsm: 4.5A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: triple independent
Case: SC74
Max. forward voltage: 1.25V
Max. forward impulse current: 4.5A
Power dissipation: 0.25W
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
на замовлення 4430 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
42+ | 10.23 грн |
46+ | 8.71 грн |
50+ | 8.08 грн |
100+ | 7.76 грн |
250+ | 7.60 грн |
BAV70UE6327HTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; SC74; 250mW; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.2A
Semiconductor structure: common cathode; double x2
Case: SC74
Power dissipation: 0.25W
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; SC74; 250mW; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.2A
Semiconductor structure: common cathode; double x2
Case: SC74
Power dissipation: 0.25W
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
на замовлення 8659 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
298+ | 1.43 грн |
302+ | 1.31 грн |
BAV99UE6327HTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; SC74; 250mW; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.2A
Semiconductor structure: double series x2
Case: SC74
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
Power dissipation: 0.25W
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; SC74; 250mW; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.2A
Semiconductor structure: double series x2
Case: SC74
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
Power dissipation: 0.25W
на замовлення 2999 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
44+ | 9.89 грн |
100+ | 7.44 грн |
166+ | 5.70 грн |
455+ | 5.30 грн |
BAS4004E6327HTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.12A; 250mW
Load current: 0.12A
Power dissipation: 0.25W
Max. forward impulse current: 0.2A
Max. off-state voltage: 40V
Semiconductor structure: double series
Case: SOT23
Mounting: SMD
Type of diode: Schottky switching
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.12A; 250mW
Load current: 0.12A
Power dissipation: 0.25W
Max. forward impulse current: 0.2A
Max. off-state voltage: 40V
Semiconductor structure: double series
Case: SOT23
Mounting: SMD
Type of diode: Schottky switching
на замовлення 7235 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
36+ | 11.94 грн |
49+ | 8.23 грн |
61+ | 6.57 грн |
112+ | 3.55 грн |
282+ | 3.31 грн |
773+ | 3.14 грн |
BAS4005E6327HTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.12A; 250mW
Case: SOT23
Mounting: SMD
Load current: 0.12A
Max. forward impulse current: 0.2A
Power dissipation: 0.25W
Max. off-state voltage: 40V
Semiconductor structure: common cathode; double
Type of diode: Schottky switching
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.12A; 250mW
Case: SOT23
Mounting: SMD
Load current: 0.12A
Max. forward impulse current: 0.2A
Power dissipation: 0.25W
Max. off-state voltage: 40V
Semiconductor structure: common cathode; double
Type of diode: Schottky switching
на замовлення 2500 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
30+ | 14.49 грн |
38+ | 10.61 грн |
41+ | 9.74 грн |
52+ | 7.70 грн |
100+ | 6.83 грн |
250+ | 5.71 грн |
251+ | 3.71 грн |
690+ | 3.50 грн |
BAS4007E6327HTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT143; SMD; 40V; 0.12A; 250mW
Case: SOT143
Mounting: SMD
Type of diode: Schottky switching
Load current: 0.12A
Max. forward impulse current: 0.2A
Power dissipation: 0.25W
Max. off-state voltage: 40V
Semiconductor structure: double independent
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT143; SMD; 40V; 0.12A; 250mW
Case: SOT143
Mounting: SMD
Type of diode: Schottky switching
Load current: 0.12A
Max. forward impulse current: 0.2A
Power dissipation: 0.25W
Max. off-state voltage: 40V
Semiconductor structure: double independent
на замовлення 895 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
24+ | 17.90 грн |
37+ | 10.85 грн |
50+ | 8.63 грн |
100+ | 7.76 грн |
137+ | 6.81 грн |
375+ | 6.49 грн |
500+ | 6.25 грн |
BAT1503WE6327HTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323; SMD; 4V; 0.11A; 100mW
Type of diode: Schottky rectifying
Mounting: SMD
Case: SOD323
Power dissipation: 0.1W
Load current: 0.11A
Semiconductor structure: single diode
Max. off-state voltage: 4V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323; SMD; 4V; 0.11A; 100mW
Type of diode: Schottky rectifying
Mounting: SMD
Case: SOD323
Power dissipation: 0.1W
Load current: 0.11A
Semiconductor structure: single diode
Max. off-state voltage: 4V
на замовлення 3560 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
10+ | 44.34 грн |
14+ | 30.40 грн |
20+ | 26.60 грн |
40+ | 23.04 грн |
50+ | 21.93 грн |
67+ | 13.93 грн |
185+ | 13.22 грн |
1000+ | 13.14 грн |
3000+ | 12.67 грн |
SMBTA42E6327HTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 0.36W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.36W
Case: SOT23
Mounting: SMD
Frequency: 70MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 0.36W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.36W
Case: SOT23
Mounting: SMD
Frequency: 70MHz
на замовлення 3128 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
20+ | 22.17 грн |
27+ | 15.20 грн |
50+ | 10.01 грн |
100+ | 8.27 грн |
209+ | 4.47 грн |
573+ | 4.22 грн |
3000+ | 4.14 грн |
BC856UE6327 |
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Виробник: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 65V; 0.1A; 0.25W; SC74
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SC74
Mounting: SMD
Frequency: 250MHz
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 65V; 0.1A; 0.25W; SC74
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SC74
Mounting: SMD
Frequency: 250MHz
на замовлення 968 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
41+ | 10.40 грн |
53+ | 7.60 грн |
135+ | 6.97 грн |
250+ | 6.73 грн |
370+ | 6.57 грн |
BFR106E6327 |
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Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 16V; 0.21A; 0.7W; SOT23
Mounting: SMD
Collector current: 0.21A
Power dissipation: 0.7W
Collector-emitter voltage: 16V
Frequency: 5GHz
Kind of package: reel; tape
Polarisation: bipolar
Case: SOT23
Type of transistor: NPN
Kind of transistor: RF
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 16V; 0.21A; 0.7W; SOT23
Mounting: SMD
Collector current: 0.21A
Power dissipation: 0.7W
Collector-emitter voltage: 16V
Frequency: 5GHz
Kind of package: reel; tape
Polarisation: bipolar
Case: SOT23
Type of transistor: NPN
Kind of transistor: RF
на замовлення 1593 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
19+ | 23.02 грн |
24+ | 16.78 грн |
100+ | 12.83 грн |
106+ | 8.79 грн |
290+ | 8.31 грн |
BFR92PE6327 |
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Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 15V; 45mA; 0.28W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 15V
Collector current: 45mA
Power dissipation: 0.28W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 5GHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 15V; 45mA; 0.28W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 15V
Collector current: 45mA
Power dissipation: 0.28W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 5GHz
на замовлення 7895 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
39+ | 11.08 грн |
44+ | 9.03 грн |
50+ | 7.92 грн |
59+ | 6.71 грн |
66+ | 6.02 грн |
100+ | 5.42 грн |
200+ | 4.69 грн |
500+ | 4.58 грн |
549+ | 4.43 грн |
BSR302NL6327HTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.7A; 0.5W; SC59
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
On-state resistance: 36mΩ
Power dissipation: 0.5W
Drain current: 3.7A
Gate-source voltage: ±20V
Drain-source voltage: 30V
Case: SC59
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.7A; 0.5W; SC59
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
On-state resistance: 36mΩ
Power dissipation: 0.5W
Drain current: 3.7A
Gate-source voltage: ±20V
Drain-source voltage: 30V
Case: SC59
товару немає в наявності
В кошику
од. на суму грн.
BFP193E6327 |
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Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 12V; 80mA; 0.58W; SOT143
Polarisation: bipolar
Case: SOT143
Type of transistor: NPN
Mounting: SMD
Kind of transistor: RF
Collector current: 80mA
Power dissipation: 0.58W
Collector-emitter voltage: 12V
Frequency: 8GHz
Current gain: 70...140
Kind of package: reel; tape
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 12V; 80mA; 0.58W; SOT143
Polarisation: bipolar
Case: SOT143
Type of transistor: NPN
Mounting: SMD
Kind of transistor: RF
Collector current: 80mA
Power dissipation: 0.58W
Collector-emitter voltage: 12V
Frequency: 8GHz
Current gain: 70...140
Kind of package: reel; tape
на замовлення 3752 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
23+ | 18.76 грн |
28+ | 14.33 грн |
100+ | 10.93 грн |
122+ | 7.60 грн |
336+ | 7.20 грн |
BCR133E6327 |
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Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 10kΩ
Type of transistor: NPN
Collector current: 0.1A
Power dissipation: 0.2W
Collector-emitter voltage: 50V
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Frequency: 130MHz
Polarisation: bipolar
Kind of transistor: BRT
Case: SOT23
Mounting: SMD
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 10kΩ
Type of transistor: NPN
Collector current: 0.1A
Power dissipation: 0.2W
Collector-emitter voltage: 50V
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Frequency: 130MHz
Polarisation: bipolar
Kind of transistor: BRT
Case: SOT23
Mounting: SMD
на замовлення 2875 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
53+ | 8.06 грн |
72+ | 5.54 грн |
80+ | 5.00 грн |
86+ | 4.61 грн |
100+ | 4.23 грн |
250+ | 3.79 грн |
358+ | 2.60 грн |
985+ | 2.45 грн |
BCR158E6327 |
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Виробник: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 2.2kΩ
Mounting: SMD
Polarisation: bipolar
Kind of transistor: BRT
Case: SOT23
Type of transistor: PNP
Collector current: 0.1A
Power dissipation: 0.2W
Collector-emitter voltage: 50V
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Frequency: 200MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 2.2kΩ
Mounting: SMD
Polarisation: bipolar
Kind of transistor: BRT
Case: SOT23
Type of transistor: PNP
Collector current: 0.1A
Power dissipation: 0.2W
Collector-emitter voltage: 50V
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Frequency: 200MHz
на замовлення 6783 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
97+ | 4.40 грн |
112+ | 3.56 грн |
250+ | 3.15 грн |
342+ | 2.73 грн |
939+ | 2.58 грн |
3000+ | 2.55 грн |
BAR6403WE6327HTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 50V; 100mA; 250mW; SOD323; single diode
Semiconductor structure: single diode
Features of semiconductor devices: PIN; RF
Kind of package: reel; tape
Case: SOD323
Mounting: SMD
Type of diode: switching
Load current: 0.1A
Power dissipation: 0.25W
Max. forward voltage: 1.2V
Max. off-state voltage: 50V
Category: Diodes - others
Description: Diode: switching; 50V; 100mA; 250mW; SOD323; single diode
Semiconductor structure: single diode
Features of semiconductor devices: PIN; RF
Kind of package: reel; tape
Case: SOD323
Mounting: SMD
Type of diode: switching
Load current: 0.1A
Power dissipation: 0.25W
Max. forward voltage: 1.2V
Max. off-state voltage: 50V
на замовлення 535 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
34+ | 12.79 грн |
62+ | 6.41 грн |
67+ | 5.94 грн |
70+ | 5.70 грн |
BAR6404E6327HTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 150V; 100mA; 250mW; SOT23; double series
Semiconductor structure: double series
Features of semiconductor devices: PIN; RF
Kind of package: reel; tape
Case: SOT23
Mounting: SMD
Type of diode: switching
Load current: 0.1A
Power dissipation: 0.25W
Max. forward voltage: 1.1V
Max. off-state voltage: 150V
Category: Diodes - others
Description: Diode: switching; 150V; 100mA; 250mW; SOT23; double series
Semiconductor structure: double series
Features of semiconductor devices: PIN; RF
Kind of package: reel; tape
Case: SOT23
Mounting: SMD
Type of diode: switching
Load current: 0.1A
Power dissipation: 0.25W
Max. forward voltage: 1.1V
Max. off-state voltage: 150V
на замовлення 1473 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
20+ | 22.17 грн |
30+ | 13.38 грн |
39+ | 10.32 грн |
100+ | 6.92 грн |
209+ | 4.47 грн |
573+ | 4.24 грн |
1000+ | 4.07 грн |
BAR66E6327HTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 150V; 200mA; 250mW; SOT23; double series
Semiconductor structure: double series
Features of semiconductor devices: PIN
Kind of package: reel; tape
Case: SOT23
Mounting: SMD
Type of diode: switching
Load current: 0.2A
Power dissipation: 0.25W
Max. forward voltage: 1.2V
Max. forward impulse current: 12A
Max. off-state voltage: 150V
Category: Diodes - others
Description: Diode: switching; 150V; 200mA; 250mW; SOT23; double series
Semiconductor structure: double series
Features of semiconductor devices: PIN
Kind of package: reel; tape
Case: SOT23
Mounting: SMD
Type of diode: switching
Load current: 0.2A
Power dissipation: 0.25W
Max. forward voltage: 1.2V
Max. forward impulse current: 12A
Max. off-state voltage: 150V
на замовлення 4510 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
30+ | 14.49 грн |
38+ | 10.61 грн |
42+ | 9.50 грн |
50+ | 8.08 грн |
100+ | 8.00 грн |
BA592E6327HTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 35V; 100mA; SOD323; single diode; reel,tape
Type of diode: switching
Max. off-state voltage: 35V
Load current: 0.1A
Case: SOD323
Mounting: SMD
Semiconductor structure: single diode
Features of semiconductor devices: PIN; RF
Kind of package: reel; tape
Leakage current: 20nA
Capacitance: 0.6...1.4pF
Category: Diodes - others
Description: Diode: switching; 35V; 100mA; SOD323; single diode; reel,tape
Type of diode: switching
Max. off-state voltage: 35V
Load current: 0.1A
Case: SOD323
Mounting: SMD
Semiconductor structure: single diode
Features of semiconductor devices: PIN; RF
Kind of package: reel; tape
Leakage current: 20nA
Capacitance: 0.6...1.4pF
на замовлення 770 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
40+ | 11.77 грн |
45+ | 9.82 грн |
100+ | 8.63 грн |
120+ | 8.00 грн |
325+ | 7.52 грн |
BAR6303WE6327HTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 50V; 100mA; 250mW; SOD323; single diode
Semiconductor structure: single diode
Features of semiconductor devices: PIN; RF
Kind of package: reel; tape
Case: SOD323
Mounting: SMD
Type of diode: switching
Load current: 0.1A
Power dissipation: 0.25W
Max. forward voltage: 1.2V
Max. off-state voltage: 50V
Category: Diodes - others
Description: Diode: switching; 50V; 100mA; 250mW; SOD323; single diode
Semiconductor structure: single diode
Features of semiconductor devices: PIN; RF
Kind of package: reel; tape
Case: SOD323
Mounting: SMD
Type of diode: switching
Load current: 0.1A
Power dissipation: 0.25W
Max. forward voltage: 1.2V
Max. off-state voltage: 50V
на замовлення 2144 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
39+ | 11.08 грн |
49+ | 8.23 грн |
55+ | 7.28 грн |
64+ | 6.25 грн |
100+ | 5.15 грн |
195+ | 4.83 грн |
535+ | 4.51 грн |
BC817UPNE6327HTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 45V; 0.5A
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SC74
Mounting: SMD
Frequency: 170MHz
Kind of transistor: complementary pair
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 45V; 0.5A
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SC74
Mounting: SMD
Frequency: 170MHz
Kind of transistor: complementary pair
на замовлення 7003 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
15+ | 29.84 грн |
24+ | 16.55 грн |
32+ | 12.51 грн |
96+ | 9.82 грн |
100+ | 8.95 грн |
BAS3007ARPPE6327HTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 30V; If: 0.9A; Ifsm: 5A; SOT143; SMT
Case: SOT143
Max. forward impulse current: 5A
Load current: 0.9A
Features of semiconductor devices: Schottky
Max. off-state voltage: 30V
Type of bridge rectifier: single-phase
Kind of package: reel; tape
Electrical mounting: SMT
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 30V; If: 0.9A; Ifsm: 5A; SOT143; SMT
Case: SOT143
Max. forward impulse current: 5A
Load current: 0.9A
Features of semiconductor devices: Schottky
Max. off-state voltage: 30V
Type of bridge rectifier: single-phase
Kind of package: reel; tape
Electrical mounting: SMT
на замовлення 3268 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
14+ | 31.55 грн |
16+ | 25.65 грн |
17+ | 24.15 грн |
57+ | 16.55 грн |
155+ | 15.68 грн |
1000+ | 15.04 грн |
BAS4002ARPPE6327HTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 40V; If: 0.2A; Ifsm: 2A; SOT143; SMT
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Load current: 0.2A
Max. forward impulse current: 2A
Max. off-state voltage: 40V
Kind of package: reel; tape
Case: SOT143
Features of semiconductor devices: Schottky
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 40V; If: 0.2A; Ifsm: 2A; SOT143; SMT
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Load current: 0.2A
Max. forward impulse current: 2A
Max. off-state voltage: 40V
Kind of package: reel; tape
Case: SOT143
Features of semiconductor devices: Schottky
на замовлення 1873 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
20+ | 22.17 грн |
25+ | 15.83 грн |
85+ | 11.00 грн |
233+ | 10.37 грн |
1000+ | 10.13 грн |
BB640E6327HTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: varicap; 30V; 20mA; SOD323; single diode; reel,tape
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: RF
Semiconductor structure: single diode
Case: SOD323
Type of diode: varicap
Capacitance: 2.8...76pF
Leakage current: 0.2µA
Load current: 20mA
Max. off-state voltage: 30V
Category: Diodes - others
Description: Diode: varicap; 30V; 20mA; SOD323; single diode; reel,tape
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: RF
Semiconductor structure: single diode
Case: SOD323
Type of diode: varicap
Capacitance: 2.8...76pF
Leakage current: 0.2µA
Load current: 20mA
Max. off-state voltage: 30V
на замовлення 1950 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
19+ | 23.02 грн |
29+ | 13.93 грн |
75+ | 9.58 грн |
100+ | 9.10 грн |
165+ | 5.62 грн |
453+ | 5.30 грн |
IRLML9303TRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.3A; 1.25W; SOT23
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2.3A
Power dissipation: 1.25W
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.3A; 1.25W; SOT23
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2.3A
Power dissipation: 1.25W
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
на замовлення 5861 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
19+ | 23.02 грн |
28+ | 14.41 грн |
50+ | 9.66 грн |
100+ | 8.15 грн |
180+ | 5.23 грн |
493+ | 4.91 грн |
3000+ | 4.83 грн |
IPD70R360P7SAUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 7.5A; 59.5W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 7.5A
Power dissipation: 59.5W
Case: PG-TO252-3
Gate-source voltage: ±16V
On-state resistance: 0.36Ω
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 7.5A; 59.5W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 7.5A
Power dissipation: 59.5W
Case: PG-TO252-3
Gate-source voltage: ±16V
On-state resistance: 0.36Ω
Mounting: SMD
Kind of channel: enhancement
на замовлення 1544 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
7+ | 63.09 грн |
9+ | 48.93 грн |
25+ | 42.91 грн |
26+ | 36.97 грн |
70+ | 34.99 грн |
IR1161LTRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; flyback,push-pull,resonant LLC; gate driver; SOT23-5
Case: SOT23-5
Mounting: SMD
Kind of package: reel; tape
Kind of integrated circuit: gate driver
Application: SMPS
Operating temperature: -40...125°C
Output current: -2.5...1A
Power: 590mW
Supply voltage: 4.75...18V DC
Voltage class: 200V
Type of integrated circuit: driver
Topology: flyback; push-pull; resonant LLC
Category: MOSFET/IGBT drivers
Description: IC: driver; flyback,push-pull,resonant LLC; gate driver; SOT23-5
Case: SOT23-5
Mounting: SMD
Kind of package: reel; tape
Kind of integrated circuit: gate driver
Application: SMPS
Operating temperature: -40...125°C
Output current: -2.5...1A
Power: 590mW
Supply voltage: 4.75...18V DC
Voltage class: 200V
Type of integrated circuit: driver
Topology: flyback; push-pull; resonant LLC
товару немає в наявності
В кошику
од. на суму грн.
IR11688STRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; flyback,push-pull,resonant LLC; gate driver; SO8
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of integrated circuit: gate driver
Application: SMPS
Operating temperature: -40...125°C
Output current: -4...1A
Power: 625mW
Supply voltage: 4.75...18V DC
Voltage class: 200V
Type of integrated circuit: driver
Topology: flyback; push-pull; resonant LLC
Category: MOSFET/IGBT drivers
Description: IC: driver; flyback,push-pull,resonant LLC; gate driver; SO8
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of integrated circuit: gate driver
Application: SMPS
Operating temperature: -40...125°C
Output current: -4...1A
Power: 625mW
Supply voltage: 4.75...18V DC
Voltage class: 200V
Type of integrated circuit: driver
Topology: flyback; push-pull; resonant LLC
товару немає в наявності
В кошику
од. на суму грн.
IR1169STRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; flyback,push-pull,resonant LLC; gate driver; SO8
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of integrated circuit: gate driver
Application: SMPS
Operating temperature: -40...125°C
Output current: -4...1A
Power: 625mW
Supply voltage: 11...19V DC
Voltage class: 200V
Type of integrated circuit: driver
Topology: flyback; push-pull; resonant LLC
Category: MOSFET/IGBT drivers
Description: IC: driver; flyback,push-pull,resonant LLC; gate driver; SO8
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of integrated circuit: gate driver
Application: SMPS
Operating temperature: -40...125°C
Output current: -4...1A
Power: 625mW
Supply voltage: 11...19V DC
Voltage class: 200V
Type of integrated circuit: driver
Topology: flyback; push-pull; resonant LLC
товару немає в наявності
В кошику
од. на суму грн.
ICE5QR1070AZXKLA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 400mA; 20kHz; Ch: 1; DIP7; flyback; 0÷80%
Operating voltage: 10...25.5V DC
Mounting: THT
Operating temperature: -40...150°C
Case: DIP7
Topology: flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Application: SMPS
Duty cycle factor: 0...80%
Output current: 0.4A
Power: 58/32W
Number of channels: 1
Input voltage: 80...265V
Breakdown voltage: 700V
Frequency: 20kHz
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 400mA; 20kHz; Ch: 1; DIP7; flyback; 0÷80%
Operating voltage: 10...25.5V DC
Mounting: THT
Operating temperature: -40...150°C
Case: DIP7
Topology: flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Application: SMPS
Duty cycle factor: 0...80%
Output current: 0.4A
Power: 58/32W
Number of channels: 1
Input voltage: 80...265V
Breakdown voltage: 700V
Frequency: 20kHz
на замовлення 70 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
8+ | 57.13 грн |
21+ | 46.71 грн |
56+ | 43.54 грн |
BFP740H6327XTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; SiGe: C; bipolar; HBT,RF; 13V; 45mA; 0.16W; SOT343
Mounting: SMD
Case: SOT343
Kind of package: reel; tape
Frequency: 44GHz
Kind of transistor: HBT; RF
Type of transistor: NPN
Technology: SiGe:C
Collector current: 45mA
Power dissipation: 0.16W
Collector-emitter voltage: 13V
Current gain: 160...400
Polarisation: bipolar
Category: NPN SMD transistors
Description: Transistor: NPN; SiGe: C; bipolar; HBT,RF; 13V; 45mA; 0.16W; SOT343
Mounting: SMD
Case: SOT343
Kind of package: reel; tape
Frequency: 44GHz
Kind of transistor: HBT; RF
Type of transistor: NPN
Technology: SiGe:C
Collector current: 45mA
Power dissipation: 0.16W
Collector-emitter voltage: 13V
Current gain: 160...400
Polarisation: bipolar
на замовлення 2468 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
20+ | 21.57 грн |
25+ | 17.97 грн |
55+ | 17.18 грн |
100+ | 15.91 грн |
500+ | 15.60 грн |
BTS50055-1TMB |
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Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 55A; Ch: 1; N-Channel; THT
Case: PG-TO220-7-11
Technology: High Current PROFET
Kind of integrated circuit: high-side
Kind of output: N-Channel
Mounting: THT
On-state resistance: 4.4mΩ
Number of channels: 1
Supply voltage: 5...34V DC
Output current: 55A
Type of integrated circuit: power switch
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 55A; Ch: 1; N-Channel; THT
Case: PG-TO220-7-11
Technology: High Current PROFET
Kind of integrated circuit: high-side
Kind of output: N-Channel
Mounting: THT
On-state resistance: 4.4mΩ
Number of channels: 1
Supply voltage: 5...34V DC
Output current: 55A
Type of integrated circuit: power switch
на замовлення 69 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 604.50 грн |
4+ | 304.81 грн |
9+ | 288.18 грн |
BTS50080-1TMB |
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Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 9.5A; Ch: 1; N-Channel; THT
Case: PG-TO220-7-12
Technology: High Current PROFET
Kind of integrated circuit: high-side
Kind of output: N-Channel
Mounting: THT
On-state resistance: 7mΩ
Number of channels: 1
Supply voltage: 5.5...38V DC
Output current: 9.5A
Type of integrated circuit: power switch
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 9.5A; Ch: 1; N-Channel; THT
Case: PG-TO220-7-12
Technology: High Current PROFET
Kind of integrated circuit: high-side
Kind of output: N-Channel
Mounting: THT
On-state resistance: 7mΩ
Number of channels: 1
Supply voltage: 5.5...38V DC
Output current: 9.5A
Type of integrated circuit: power switch
на замовлення 28 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 470.64 грн |
3+ | 311.94 грн |
9+ | 295.31 грн |
BFR182WH6327XTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 12V; 35mA; 0.25W; SOT323
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 0.25W
Case: SOT323
Mounting: SMD
Collector-emitter voltage: 12V
Frequency: 8GHz
Kind of transistor: RF
Kind of package: reel; tape
Collector current: 35mA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 12V; 35mA; 0.25W; SOT323
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 0.25W
Case: SOT323
Mounting: SMD
Collector-emitter voltage: 12V
Frequency: 8GHz
Kind of transistor: RF
Kind of package: reel; tape
Collector current: 35mA
на замовлення 877 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
50+ | 8.53 грн |
67+ | 5.94 грн |
79+ | 5.04 грн |
89+ | 4.48 грн |
100+ | 4.35 грн |
BCP5616H6327XTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 2W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 2W
Case: SOT223
Mounting: SMD
Frequency: 100MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 2W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 2W
Case: SOT223
Mounting: SMD
Frequency: 100MHz
на замовлення 535 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
25+ | 16.31 грн |
75+ | 12.52 грн |
205+ | 11.84 грн |
BCX53H6327XTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1A; 2W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 2W
Case: SOT89
Mounting: SMD
Frequency: 125MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1A; 2W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 2W
Case: SOT89
Mounting: SMD
Frequency: 125MHz
на замовлення 454 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
25+ | 17.22 грн |
29+ | 13.93 грн |
85+ | 10.99 грн |
234+ | 10.40 грн |
BCX5610H6327XTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 2W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 2W
Case: SOT89
Mounting: SMD
Frequency: 100MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 2W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 2W
Case: SOT89
Mounting: SMD
Frequency: 100MHz
на замовлення 1730 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
25+ | 15.91 грн |
80+ | 12.35 грн |
210+ | 11.64 грн |
BCX56H6327XTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 2W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 2W
Case: SOT89
Mounting: SMD
Frequency: 100MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 2W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 2W
Case: SOT89
Mounting: SMD
Frequency: 100MHz
товару немає в наявності
В кошику
од. на суму грн.
IRF5802TRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 0.9A; 2W; TSOP6
Case: TSOP6
Mounting: SMD
Kind of package: reel
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 0.9A
Power dissipation: 2W
Technology: HEXFET®
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 0.9A; 2W; TSOP6
Case: TSOP6
Mounting: SMD
Kind of package: reel
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 0.9A
Power dissipation: 2W
Technology: HEXFET®
Kind of channel: enhancement
на замовлення 1771 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
15+ | 28.99 грн |
20+ | 20.27 грн |
24+ | 17.18 грн |
75+ | 12.51 грн |
100+ | 11.40 грн |
IRLMS2002TRPBF | ![]() |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 6.5A; 2W; TSOP6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 6.5A
Power dissipation: 2W
Case: TSOP6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 6.5A; 2W; TSOP6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 6.5A
Power dissipation: 2W
Case: TSOP6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
товару немає в наявності
В кошику
од. на суму грн.
BSL207SPH6327XTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6A; 2W; PG-TSOP-6
Case: PG-TSOP-6
Mounting: SMD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -6A
On-state resistance: 41mΩ
Power dissipation: 2W
Gate-source voltage: ±12V
Technology: OptiMOS™ P
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6A; 2W; PG-TSOP-6
Case: PG-TSOP-6
Mounting: SMD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -6A
On-state resistance: 41mΩ
Power dissipation: 2W
Gate-source voltage: ±12V
Technology: OptiMOS™ P
Kind of channel: enhancement
на замовлення 2850 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
9+ | 48.60 грн |
13+ | 30.64 грн |
51+ | 18.37 грн |
140+ | 17.34 грн |
1000+ | 16.71 грн |
IR2132JPBF | ![]() |
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Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: PLCC44
Output current: -420...200mA
Number of channels: 6
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-off time: 475ns
Turn-on time: 675ns
Power: 2W
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: PLCC44
Output current: -420...200mA
Number of channels: 6
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-off time: 475ns
Turn-on time: 675ns
Power: 2W
на замовлення 26 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 401.58 грн |
3+ | 338.06 грн |
8+ | 319.06 грн |
IR2135JPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: PLCC44
Output current: -420...200mA
Power: 2W
Number of channels: 6
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 0.6/1.2kV
Turn-on time: 750ns
Turn-off time: 700ns
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: PLCC44
Output current: -420...200mA
Power: 2W
Number of channels: 6
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 0.6/1.2kV
Turn-on time: 750ns
Turn-off time: 700ns
на замовлення 20 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 907.18 грн |
2+ | 633.37 грн |
5+ | 598.54 грн |
IR2233JPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: PLCC44
Output current: -420...200mA
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Number of channels: 6
Power: 2W
Voltage class: 1.2kV
Integrated circuit features: charge pump; dead time; integrated bootstrap functionality
Kind of package: tube
Turn-off time: 700ns
Turn-on time: 750ns
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: PLCC44
Output current: -420...200mA
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Number of channels: 6
Power: 2W
Voltage class: 1.2kV
Integrated circuit features: charge pump; dead time; integrated bootstrap functionality
Kind of package: tube
Turn-off time: 700ns
Turn-on time: 750ns
на замовлення 28 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 566.14 грн |
10+ | 514.61 грн |
IRFB7434PBF |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 317A; 294W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 317A
Power dissipation: 294W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.6mΩ
Mounting: THT
Gate charge: 216nC
Kind of package: tube
Kind of channel: enhancement
Trade name: StrongIRFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 317A; 294W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 317A
Power dissipation: 294W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.6mΩ
Mounting: THT
Gate charge: 216nC
Kind of package: tube
Kind of channel: enhancement
Trade name: StrongIRFET
на замовлення 110 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3+ | 202.92 грн |
10+ | 164.68 грн |
11+ | 89.46 грн |
29+ | 84.71 грн |
100+ | 81.55 грн |
IR2181SPBF | ![]() |
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Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -2.3...1.9A
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Integrated circuit features: charge pump; integrated bootstrap functionality
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 180ns
Turn-off time: 0.22µs
Protection: undervoltage UVP
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -2.3...1.9A
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Integrated circuit features: charge pump; integrated bootstrap functionality
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 180ns
Turn-off time: 0.22µs
Protection: undervoltage UVP
на замовлення 80 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3+ | 184.17 грн |