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S29AL008J70BFI013 INFINEON TECHNOLOGIES Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel
Case: VFBGA48
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 70ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 8Mb FLASH
Mounting: SMD
Operating temperature: -40...85°C
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S29AL008J70BFI020 INFINEON TECHNOLOGIES Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel
Case: VFBGA48
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 70ns
Kind of package: in-tray
Kind of interface: parallel
Memory: 8Mb FLASH
Mounting: SMD
Operating temperature: -40...85°C
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S29AL008J70BFI022 INFINEON TECHNOLOGIES Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel
Case: VFBGA48
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 70ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 8Mb FLASH
Mounting: SMD
Operating temperature: -40...85°C
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S29AL008J70BFI023 INFINEON TECHNOLOGIES Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel
Case: VFBGA48
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 70ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 8Mb FLASH
Mounting: SMD
Operating temperature: -40...85°C
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S29AL008J70BFM023 INFINEON TECHNOLOGIES Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel
Case: VFBGA48
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 70ns
Application: automotive
Kind of package: reel; tape
Kind of interface: parallel
Memory: 8Mb FLASH
Mounting: SMD
Operating temperature: -40...125°C
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S29AL008J70BFN010 INFINEON TECHNOLOGIES Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel
Case: VFBGA48
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 70ns
Kind of package: in-tray
Kind of interface: parallel
Memory: 8Mb FLASH
Mounting: SMD
Operating temperature: -40...125°C
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S29AL008J70BFN020 INFINEON TECHNOLOGIES Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel
Case: VFBGA48
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 70ns
Kind of package: in-tray
Kind of interface: parallel
Memory: 8Mb FLASH
Mounting: SMD
Operating temperature: -40...125°C
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S29AL008J70TFI013 INFINEON TECHNOLOGIES Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; TSOP48; parallel
Case: TSOP48
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 70ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 8Mb FLASH
Mounting: SMD
Operating temperature: -40...85°C
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S29AL008J70TFI023 INFINEON TECHNOLOGIES Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; TSOP48; parallel
Case: TSOP48
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 70ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 8Mb FLASH
Mounting: SMD
Operating temperature: -40...85°C
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S29AL008J70TFN010 INFINEON TECHNOLOGIES Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; TSOP48; parallel
Case: TSOP48
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 70ns
Kind of package: in-tray
Kind of interface: parallel
Memory: 8Mb FLASH
Mounting: SMD
Operating temperature: -40...125°C
товару немає в наявності
В кошику  од. на суму  грн.
S29AL008J70TFN020 INFINEON TECHNOLOGIES Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; TSOP48; parallel
Case: TSOP48
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 70ns
Kind of package: in-tray
Kind of interface: parallel
Memory: 8Mb FLASH
Mounting: SMD
Operating temperature: -40...125°C
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IPB019N06L3GATMA1 IPB019N06L3GATMA1 INFINEON TECHNOLOGIES IPB019N06L3G-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 250W; PG-TO263-3
Mounting: SMD
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: PG-TO263-3
Drain-source voltage: 60V
Drain current: 120A
On-state resistance: 1.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 250W
Polarisation: unipolar
на замовлення 21 шт:
термін постачання 21-30 дні (днів)
2+207.47 грн
8+122.32 грн
21+116.20 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
SPD30P06PGBTMA1 SPD30P06PGBTMA1 INFINEON TECHNOLOGIES SPD30P06PGBTMA1-DTE.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -30A; 125W; PG-TO252-3
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -30A
Power dissipation: 125W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: SMD
Kind of channel: enhancement
на замовлення 1882 шт:
термін постачання 21-30 дні (днів)
4+108.68 грн
10+81.80 грн
16+57.34 грн
43+54.28 грн
250+52.75 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
BAS7007E6327 BAS7007E6327 INFINEON TECHNOLOGIES BAS7004E6327HTSA1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT143; SMD; 70V; 70mA; 250mW
Case: SOT143
Mounting: SMD
Max. forward impulse current: 0.1A
Power dissipation: 0.25W
Type of diode: Schottky switching
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: double independent
на замовлення 2570 шт:
термін постачання 21-30 дні (днів)
20+20.58 грн
27+14.60 грн
100+9.79 грн
149+6.04 грн
411+5.66 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
IRLR3410TRLPBF INFINEON TECHNOLOGIES irlr3410pbf.pdf?fileId=5546d462533600a40153566d14c52695 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 12A; Idm: 60A; 79W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 12A
Power dissipation: 79W
Case: DPAK
Mounting: SMD
Kind of channel: enhancement
On-state resistance: 0.105Ω
Gate-source voltage: ±16V
Pulsed drain current: 60A
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IPD50P03P4L11ATMA1 INFINEON TECHNOLOGIES Infineon-IPD50P03P4L_11-DS-v01_01-en.pdf?folderId=db3a304314dca3890114ef902baa05f9&fileId=db3a30431ddc9372011e07ebbe0127e8&ack=t Category: SMD P channel transistors
Description: Transistor: P-MOSFET; OptiMOS® -P2; unipolar; -30V; -42A; 58W
Mounting: SMD
Drain-source voltage: -30V
Drain current: -42A
On-state resistance: 10.5mΩ
Type of transistor: P-MOSFET
Power dissipation: 58W
Polarisation: unipolar
Case: PG-TO252-3-11
Technology: OptiMOS® -P2
Kind of channel: enhancement
Gate-source voltage: -5...16V
Pulsed drain current: -200A
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FF300R12KS4 FF300R12KS4 INFINEON TECHNOLOGIES FF300R12KS4-dte.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 300A
Case: AG-62MM-1
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 600A
Power dissipation: 1.95kW
Mechanical mounting: screw
на замовлення 6 шт:
термін постачання 21-30 дні (днів)
1+15091.01 грн
В кошику  од. на суму  грн.
IRFSL3207ZPBF IRFSL3207ZPBF INFINEON TECHNOLOGIES irfs3207zpbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 170A; 300W; TO262
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 170A
Power dissipation: 300W
Case: TO262
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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BSC120N03LSGATMA1 BSC120N03LSGATMA1 INFINEON TECHNOLOGIES BSC120N03LSG-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 33A; 28W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 33A
Power dissipation: 28W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
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BSC120N03MSGATMA1 BSC120N03MSGATMA1 INFINEON TECHNOLOGIES BSC120N03MSG-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 36A; 28W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: PG-TDSON-8
Mounting: SMD
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: 30V
Drain current: 36A
On-state resistance: 12mΩ
Power dissipation: 28W
Technology: OptiMOS™ 3
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BCX41E6327 BCX41E6327 INFINEON TECHNOLOGIES BCX41.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 125V; 0.8A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 125V
Collector current: 0.8A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 100MHz
на замовлення 1579 шт:
термін постачання 21-30 дні (днів)
47+8.89 грн
54+7.11 грн
100+6.35 грн
157+5.81 грн
430+5.50 грн
1000+5.43 грн
Мінімальне замовлення: 47
В кошику  од. на суму  грн.
IRF7476TRPBF IRF7476TRPBF INFINEON TECHNOLOGIES IRF7476TRPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 15A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 12V
Drain current: 15A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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BAS170WE6327HTSA1 BAS170WE6327HTSA1 INFINEON TECHNOLOGIES BAS170WE6327HTSA1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 70V; 70mA; 250mW
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: single diode
Max. forward impulse current: 0.1A
Power dissipation: 0.25W
на замовлення 38 шт:
термін постачання 21-30 дні (днів)
17+25.52 грн
28+13.68 грн
38+10.15 грн
Мінімальне замовлення: 17
В кошику  од. на суму  грн.
IDH12G65C5 IDH12G65C5 INFINEON TECHNOLOGIES IDH12G65C5-DTE.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 12A; PG-TO220-2; 104W
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 12A
Semiconductor structure: single diode
Case: PG-TO220-2
Max. forward voltage: 1.8V
Max. forward impulse current: 83A
Leakage current: 2.4µA
Power dissipation: 104W
Kind of package: tube
Heatsink thickness: 1.17...137mm
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IAUT300N08S5N012ATMA2 IAUT300N08S5N012ATMA2 INFINEON TECHNOLOGIES IAUT300N08S5N012.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 300A; 375W; PG-HSOF-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 300A
Power dissipation: 375W
Case: PG-HSOF-8
Gate-source voltage: ±20V
On-state resistance: 1.2mΩ
Mounting: SMD
Gate charge: 178nC
Kind of package: reel; tape
Kind of channel: enhancement
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BFP193WH6327 BFP193WH6327 INFINEON TECHNOLOGIES BFP193WH6327-dte.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 20V; 80mA; 0.58W; SOT343
Case: SOT343
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 0.58W
Polarisation: bipolar
Kind of transistor: RF
Frequency: 6GHz
Collector-emitter voltage: 20V
Collector current: 80mA
Type of transistor: NPN
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IPP60R160P6XKSA1 IPP60R160P6XKSA1 INFINEON TECHNOLOGIES IPP60R160P6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23.8A; 176W; PG-TO220-3
Case: PG-TO220-3
Mounting: THT
Kind of package: tube
Drain-source voltage: 600V
Drain current: 23.8A
On-state resistance: 0.16Ω
Type of transistor: N-MOSFET
Power dissipation: 176W
Polarisation: unipolar
Technology: CoolMOS™ P6
Kind of channel: enhancement
Gate-source voltage: ±20V
на замовлення 40 шт:
термін постачання 21-30 дні (днів)
2+304.62 грн
3+249.99 грн
5+216.35 грн
12+204.88 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPP60R160C6XKSA1 IPP60R160C6XKSA1 INFINEON TECHNOLOGIES IPP60R160C6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23.8A; 176W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23.8A
Power dissipation: 176W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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IPB80N06S405ATMA2 INFINEON TECHNOLOGIES Infineon-I80N06S4_05-DS-v01_00-en.pdf?fileId=db3a30431ff98815012038d4d5340cec Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 75A; Idm: 320A; 107W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 75A
Pulsed drain current: 320A
Power dissipation: 107W
Case: PG-TO263-3-2
Gate-source voltage: ±20V
On-state resistance: 5.4mΩ
Mounting: SMD
Gate charge: 81nC
Kind of package: reel; tape
Kind of channel: enhancement
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BSS159NH6327XTSA2 BSS159NH6327XTSA2 INFINEON TECHNOLOGIES BSS159NH6327XTSA2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.23A; 0.36W; SOT23
Case: SOT23
Mounting: SMD
Drain-source voltage: 60V
Drain current: 0.23A
On-state resistance: 8Ω
Type of transistor: N-MOSFET
Power dissipation: 0.36W
Polarisation: unipolar
Technology: SIPMOS™
Kind of channel: depletion
Gate-source voltage: ±20V
на замовлення 1461 шт:
термін постачання 21-30 дні (днів)
18+23.05 грн
25+15.29 грн
99+9.17 грн
270+8.72 грн
Мінімальне замовлення: 18
В кошику  од. на суму  грн.
IRF7465TRPBF IRF7465TRPBF INFINEON TECHNOLOGIES irf7465pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 1.9A; 2.5W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 1.9A
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 2.5W
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BCR401U BCR401U INFINEON TECHNOLOGIES bcr401u.pdf Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Case: SC74
Operating voltage: 1.4...40V DC
Output current: 60mA
Type of integrated circuit: driver
Number of channels: 1
Kind of integrated circuit: current regulator; LED driver
Topology: single transistor
Mounting: SMD
на замовлення 710 шт:
термін постачання 21-30 дні (днів)
20+21.74 грн
25+18.19 грн
60+15.52 грн
100+15.29 грн
165+14.68 грн
500+14.37 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
CY7C1520KV18-333BZXI INFINEON TECHNOLOGIES Infineon-CY7C1518KV18_CY7C1520KV18_72-Mbit_DDR_II_SRAM_Two-Word_Burst_Architecture-DataSheet-v23_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec156903611 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; FBGA165; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: FBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 1.7...1.9V DC
Frequency: 333MHz
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IPD95R450P7ATMA1 IPD95R450P7ATMA1 INFINEON TECHNOLOGIES IPD95R450P7.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 8.6A; 104W; DPAK; ESD
Case: DPAK
Mounting: SMD
Kind of package: reel
Drain current: 8.6A
On-state resistance: 0.45Ω
Type of transistor: N-MOSFET
Power dissipation: 104W
Polarisation: unipolar
Version: ESD
Gate charge: 35nC
Technology: CoolMOS™ P7
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: 950V
на замовлення 1540 шт:
термін постачання 21-30 дні (днів)
3+177.01 грн
5+146.78 грн
8+119.26 грн
22+112.38 грн
500+109.32 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IPA65R110CFDXKSA1 IPA65R110CFDXKSA1 INFINEON TECHNOLOGIES IPA65R110CFD-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 31.2A; 34.7W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 31.2A
Power dissipation: 34.7W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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IPI65R110CFDXKSA1 IPI65R110CFDXKSA1 INFINEON TECHNOLOGIES IPI65R110CFD-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 31.2A; 277.8W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 31.2A
Power dissipation: 277.8W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: THT
Kind of channel: enhancement
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IPP65R110CFDXKSA1 IPP65R110CFDXKSA1 INFINEON TECHNOLOGIES IPP65R110CFD-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 31.2A; 277.8W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 31.2A
Power dissipation: 277.8W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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IPG20N04S408ATMA1 IPG20N04S408ATMA1 INFINEON TECHNOLOGIES IPG20N04S408.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; OptiMOS™ T2; unipolar; 40V; 20A; 65W
Mounting: SMD
Drain-source voltage: 40V
Drain current: 20A
On-state resistance: 7.6mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 65W
Polarisation: unipolar
Gate charge: 28nC
Technology: OptiMOS™ T2
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: PG-TDSON-8
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IPG20N04S409ATMA1 IPG20N04S409ATMA1 INFINEON TECHNOLOGIES IPG20N04S409.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; OptiMOS™ T2; unipolar; 40V; 20A; 54W
Mounting: SMD
Drain-source voltage: 40V
Drain current: 20A
On-state resistance: 8.6mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 54W
Polarisation: unipolar
Gate charge: 21.7nC
Technology: OptiMOS™ T2
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: PG-TDSON-8
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IPG20N04S4L11ATMA1 INFINEON TECHNOLOGIES Infineon-IPG20N04S4L_11-DS-v01_00-en.pdf?fileId=db3a30432ba3fa6f012bbf644b016c14 Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; OptiMOS™ T2; unipolar; 40V; 20A; Idm: 80A
Mounting: SMD
Drain-source voltage: 40V
Drain current: 20A
On-state resistance: 11.6mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 41W
Polarisation: unipolar
Technology: OptiMOS™ T2
Kind of channel: enhancement
Gate-source voltage: ±16V
Pulsed drain current: 80A
Case: PG-TDSON-8-4
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IR2114SSPBF IR2114SSPBF INFINEON TECHNOLOGIES IR2114SSPBF.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge; high-/low-side,gate driver; SSOP24
Mounting: SMD
Operating temperature: -40...125°C
Output current: -1.5...1A
Turn-off time: 440ns
Turn-on time: 440ns
Supply voltage: 10.4...20V DC
Number of channels: 2
Case: SSOP24
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT half-bridge
Voltage class: 0.6/1.2kV
Power: 1.5W
Type of integrated circuit: driver
на замовлення 30 шт:
термін постачання 21-30 дні (днів)
1+711.33 грн
2+506.09 грн
3+505.33 грн
5+477.81 грн
В кошику  од. на суму  грн.
IPB037N06N3GATMA1 IPB037N06N3GATMA1 INFINEON TECHNOLOGIES IPB037N06N3G-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 90A; 188W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: PG-TO263-3
Mounting: SMD
Kind of channel: enhancement
Drain-source voltage: 60V
Drain current: 90A
On-state resistance: 3.7mΩ
Power dissipation: 188W
Technology: OptiMOS™ 3
Gate-source voltage: ±20V
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FB30R06W1E3BOMA1 FB30R06W1E3BOMA1 INFINEON TECHNOLOGIES FB30R06W1E3.pdf Category: IGBT modules
Description: Module: IGBT; diode/transistor; single-phase diode bridge; 115W
Max. off-state voltage: 0.6kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 60A
Power dissipation: 115W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: EasyPIM™ 1B
Topology: IGBT three-phase bridge; NTC thermistor; single-phase diode bridge
Case: AG-EASY1B-1
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FP30R06KE3BPSA1 INFINEON TECHNOLOGIES FP30R06KE3.pdf Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 30A
Max. off-state voltage: 0.6kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 60A
Application: Inverter
Power dissipation: 125W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: EconoPIM™ 2
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Case: AG-ECONO2C
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TLE4291EXUMA2 TLE4291EXUMA2 INFINEON TECHNOLOGIES Infineon-TLE4291E-DS-v01_10-EN.pdf?fileId=5546d46258fc0bc101595fa0b06f1fce Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.45A; PG-SSOP-14-EP
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 5V
Output current: 0.45A
Case: PG-SSOP-14-EP
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Input voltage: 3.3...42V
Voltage drop: 0.25V
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BFP520H6327XTSA1 BFP520H6327XTSA1 INFINEON TECHNOLOGIES BFP520.pdf Category: NPN SMD transistors
Description: Transistor: NPN; SIEGET™; bipolar; RF; 2.5V; 40mA; 0.1W; SOT343
Type of transistor: NPN
Technology: SIEGET™
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 2.5V
Collector current: 40mA
Power dissipation: 0.1W
Case: SOT343
Mounting: SMD
Kind of package: reel; tape
Frequency: 45GHz
на замовлення 2086 шт:
термін постачання 21-30 дні (днів)
13+32.93 грн
18+22.48 грн
50+15.75 грн
76+12.08 грн
209+11.39 грн
500+11.01 грн
Мінімальне замовлення: 13
В кошику  од. на суму  грн.
IPP072N10N3GXKSA1 IPP072N10N3GXKSA1 INFINEON TECHNOLOGIES IPP072N10N3G-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 150W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80A
Power dissipation: 150W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 7.2mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 23 шт:
термін постачання 21-30 дні (днів)
3+177.01 грн
10+90.97 грн
14+64.98 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
BF888H6327XTSA1 BF888H6327XTSA1 INFINEON TECHNOLOGIES BF888.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 4V; 30mA; 0.16W; SOT343
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Power dissipation: 0.16W
Case: SOT343
Kind of package: reel; tape
Frequency: 47GHz
Mounting: SMD
Current gain: 250
Collector-emitter voltage: 4V
Collector current: 30mA
на замовлення 2515 шт:
термін постачання 21-30 дні (днів)
14+30.46 грн
70+12.84 грн
191+12.08 грн
Мінімальне замовлення: 14
В кошику  од. на суму  грн.
IRS21531DSTRPBF INFINEON TECHNOLOGIES IRSDS08244-1.pdf?t.download=true&u=5oefqw Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Supply voltage: 10.1...16.8V DC
Turn-on time: 0.12µs
Turn-off time: 50ns
Output current: -260...180mA
Type of integrated circuit: driver
Number of channels: 2
Integrated circuit features: dead time; front end oscillator; integrated bootstrap functionality
Kind of package: reel; tape
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Voltage class: 600V
Mounting: SMD
Operating temperature: -40...125°C
Case: SO8
Power: 625mW
на замовлення 2407 шт:
термін постачання 21-30 дні (днів)
6+80.68 грн
10+67.28 грн
18+51.22 грн
48+48.93 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
IRFS7530TRLPBF IRFS7530TRLPBF INFINEON TECHNOLOGIES irfs7530pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 295A; 375W; D2PAK; StrongIRFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 295A
Power dissipation: 375W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Gate charge: 274nC
Kind of channel: enhancement
Trade name: StrongIRFET
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BSO220N03MDGXUMA1 BSO220N03MDGXUMA1 INFINEON TECHNOLOGIES BSO220N03MDG-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7.7A; 1.56W; PG-DSO-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: PG-DSO-8
Mounting: SMD
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: 30V
Drain current: 7.7A
On-state resistance: 22mΩ
Power dissipation: 1.56W
Technology: OptiMOS™ 3
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IPP037N08N3GXKSA1 IPP037N08N3GXKSA1 INFINEON TECHNOLOGIES IPP037N08N3G-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; 214W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 100A
Power dissipation: 214W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 150 шт:
термін постачання 21-30 дні (днів)
3+176.19 грн
10+95.56 грн
13+74.92 грн
34+70.33 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IPB017N08N5ATMA1 IPB017N08N5ATMA1 INFINEON TECHNOLOGIES IPB017N08N5-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; 375W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 120A
Power dissipation: 375W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 5
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IPP034N08N5AKSA1 IPP034N08N5AKSA1 INFINEON TECHNOLOGIES IPP034N08N5-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; 167W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 120A
Power dissipation: 167W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 3.4mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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BCR400WH6327XTSA1 BCR400WH6327XTSA1 INFINEON TECHNOLOGIES BCR400W.pdf Category: Drivers - integrated circuits
Description: IC: driver; SOT343; 330mW; 1.6÷18VDC; active bias controller
Kind of package: reel; tape
Type of integrated circuit: driver
Integrated circuit features: active bias controller
Mounting: SMD
Case: SOT343
Power: 0.33W
Supply voltage: 1.6...18V DC
на замовлення 2880 шт:
термін постачання 21-30 дні (днів)
21+19.76 грн
31+12.69 грн
36+10.86 грн
100+8.94 грн
130+6.88 грн
357+6.50 грн
Мінімальне замовлення: 21
В кошику  од. на суму  грн.
IPP034NE7N3GXKSA1 IPP034NE7N3GXKSA1 INFINEON TECHNOLOGIES IPP034NE7N3G-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 100A; 214W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 100A
Power dissipation: 214W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 3.4mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 32 шт:
термін постачання 21-30 дні (днів)
2+222.29 грн
3+181.95 грн
6+157.48 грн
16+149.08 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
BSS606NH6327XTSA1 BSS606NH6327XTSA1 INFINEON TECHNOLOGIES BSS606NH6327XTSA1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3.2A; 1W; PG-SOT89
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3.2A
Power dissipation: 1W
Case: PG-SOT89
Gate-source voltage: ±20V
On-state resistance: 90mΩ
Mounting: SMD
Kind of channel: enhancement
на замовлення 945 шт:
термін постачання 21-30 дні (днів)
11+38.69 грн
16+24.39 грн
50+20.03 грн
75+12.00 грн
206+11.31 грн
Мінімальне замовлення: 11
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IAUT260N10S5N019ATMA1 IAUT260N10S5N019ATMA1 INFINEON TECHNOLOGIES IAUT260N10S5N019.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 260A; 300W; PG-HSOF-8
Case: PG-HSOF-8
Drain-source voltage: 100V
Drain current: 260A
On-state resistance: 1.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 54nC
Technology: OptiMOS™ 5
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
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IPI020N06NAKSA1 IPI020N06NAKSA1 INFINEON TECHNOLOGIES IPI020N06N-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 214W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Power dissipation: 214W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: THT
Kind of channel: enhancement
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IAUS165N08S5N029ATMA1 IAUS165N08S5N029ATMA1 INFINEON TECHNOLOGIES IAUS165N08S5N029.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 165A; Idm: 660A; 167W
Mounting: SMD
Case: PG-HSOG-8
Drain-source voltage: 80V
Drain current: 165A
On-state resistance: 2.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 167W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 31nC
Technology: OptiMOS™ 5
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 660A
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S29AL008J70BFI013 Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel
Case: VFBGA48
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 70ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 8Mb FLASH
Mounting: SMD
Operating temperature: -40...85°C
товару немає в наявності
В кошику  од. на суму  грн.
S29AL008J70BFI020 Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel
Case: VFBGA48
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 70ns
Kind of package: in-tray
Kind of interface: parallel
Memory: 8Mb FLASH
Mounting: SMD
Operating temperature: -40...85°C
товару немає в наявності
В кошику  од. на суму  грн.
S29AL008J70BFI022 Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel
Case: VFBGA48
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 70ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 8Mb FLASH
Mounting: SMD
Operating temperature: -40...85°C
товару немає в наявності
В кошику  од. на суму  грн.
S29AL008J70BFI023 Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel
Case: VFBGA48
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 70ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 8Mb FLASH
Mounting: SMD
Operating temperature: -40...85°C
товару немає в наявності
В кошику  од. на суму  грн.
S29AL008J70BFM023 Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel
Case: VFBGA48
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 70ns
Application: automotive
Kind of package: reel; tape
Kind of interface: parallel
Memory: 8Mb FLASH
Mounting: SMD
Operating temperature: -40...125°C
товару немає в наявності
В кошику  од. на суму  грн.
S29AL008J70BFN010 Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel
Case: VFBGA48
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 70ns
Kind of package: in-tray
Kind of interface: parallel
Memory: 8Mb FLASH
Mounting: SMD
Operating temperature: -40...125°C
товару немає в наявності
В кошику  од. на суму  грн.
S29AL008J70BFN020 Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel
Case: VFBGA48
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 70ns
Kind of package: in-tray
Kind of interface: parallel
Memory: 8Mb FLASH
Mounting: SMD
Operating temperature: -40...125°C
товару немає в наявності
В кошику  од. на суму  грн.
S29AL008J70TFI013 Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; TSOP48; parallel
Case: TSOP48
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 70ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 8Mb FLASH
Mounting: SMD
Operating temperature: -40...85°C
товару немає в наявності
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S29AL008J70TFI023 Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; TSOP48; parallel
Case: TSOP48
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 70ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 8Mb FLASH
Mounting: SMD
Operating temperature: -40...85°C
товару немає в наявності
В кошику  од. на суму  грн.
S29AL008J70TFN010 Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; TSOP48; parallel
Case: TSOP48
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 70ns
Kind of package: in-tray
Kind of interface: parallel
Memory: 8Mb FLASH
Mounting: SMD
Operating temperature: -40...125°C
товару немає в наявності
В кошику  од. на суму  грн.
S29AL008J70TFN020 Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; TSOP48; parallel
Case: TSOP48
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 70ns
Kind of package: in-tray
Kind of interface: parallel
Memory: 8Mb FLASH
Mounting: SMD
Operating temperature: -40...125°C
товару немає в наявності
В кошику  од. на суму  грн.
IPB019N06L3GATMA1 IPB019N06L3G-DTE.pdf
IPB019N06L3GATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 250W; PG-TO263-3
Mounting: SMD
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: PG-TO263-3
Drain-source voltage: 60V
Drain current: 120A
On-state resistance: 1.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 250W
Polarisation: unipolar
на замовлення 21 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+207.47 грн
8+122.32 грн
21+116.20 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
SPD30P06PGBTMA1 SPD30P06PGBTMA1-DTE.pdf
SPD30P06PGBTMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -30A; 125W; PG-TO252-3
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -30A
Power dissipation: 125W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: SMD
Kind of channel: enhancement
на замовлення 1882 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
4+108.68 грн
10+81.80 грн
16+57.34 грн
43+54.28 грн
250+52.75 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
BAS7007E6327 BAS7004E6327HTSA1.pdf
BAS7007E6327
Виробник: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT143; SMD; 70V; 70mA; 250mW
Case: SOT143
Mounting: SMD
Max. forward impulse current: 0.1A
Power dissipation: 0.25W
Type of diode: Schottky switching
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: double independent
на замовлення 2570 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
20+20.58 грн
27+14.60 грн
100+9.79 грн
149+6.04 грн
411+5.66 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
IRLR3410TRLPBF irlr3410pbf.pdf?fileId=5546d462533600a40153566d14c52695
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 12A; Idm: 60A; 79W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 12A
Power dissipation: 79W
Case: DPAK
Mounting: SMD
Kind of channel: enhancement
On-state resistance: 0.105Ω
Gate-source voltage: ±16V
Pulsed drain current: 60A
товару немає в наявності
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IPD50P03P4L11ATMA1 Infineon-IPD50P03P4L_11-DS-v01_01-en.pdf?folderId=db3a304314dca3890114ef902baa05f9&fileId=db3a30431ddc9372011e07ebbe0127e8&ack=t
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; OptiMOS® -P2; unipolar; -30V; -42A; 58W
Mounting: SMD
Drain-source voltage: -30V
Drain current: -42A
On-state resistance: 10.5mΩ
Type of transistor: P-MOSFET
Power dissipation: 58W
Polarisation: unipolar
Case: PG-TO252-3-11
Technology: OptiMOS® -P2
Kind of channel: enhancement
Gate-source voltage: -5...16V
Pulsed drain current: -200A
товару немає в наявності
В кошику  од. на суму  грн.
FF300R12KS4 FF300R12KS4-dte.pdf
FF300R12KS4
Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 300A
Case: AG-62MM-1
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 600A
Power dissipation: 1.95kW
Mechanical mounting: screw
на замовлення 6 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+15091.01 грн
В кошику  од. на суму  грн.
IRFSL3207ZPBF irfs3207zpbf.pdf
IRFSL3207ZPBF
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 170A; 300W; TO262
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 170A
Power dissipation: 300W
Case: TO262
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
BSC120N03LSGATMA1 BSC120N03LSG-DTE.pdf
BSC120N03LSGATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 33A; 28W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 33A
Power dissipation: 28W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
товару немає в наявності
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BSC120N03MSGATMA1 BSC120N03MSG-DTE.pdf
BSC120N03MSGATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 36A; 28W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: PG-TDSON-8
Mounting: SMD
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: 30V
Drain current: 36A
On-state resistance: 12mΩ
Power dissipation: 28W
Technology: OptiMOS™ 3
товару немає в наявності
В кошику  од. на суму  грн.
BCX41E6327 BCX41.pdf
BCX41E6327
Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 125V; 0.8A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 125V
Collector current: 0.8A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 100MHz
на замовлення 1579 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
47+8.89 грн
54+7.11 грн
100+6.35 грн
157+5.81 грн
430+5.50 грн
1000+5.43 грн
Мінімальне замовлення: 47
В кошику  од. на суму  грн.
IRF7476TRPBF IRF7476TRPBF.pdf
IRF7476TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 15A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 12V
Drain current: 15A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
BAS170WE6327HTSA1 BAS170WE6327HTSA1.pdf
BAS170WE6327HTSA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 70V; 70mA; 250mW
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: single diode
Max. forward impulse current: 0.1A
Power dissipation: 0.25W
на замовлення 38 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
17+25.52 грн
28+13.68 грн
38+10.15 грн
Мінімальне замовлення: 17
В кошику  од. на суму  грн.
IDH12G65C5 IDH12G65C5-DTE.pdf
IDH12G65C5
Виробник: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 12A; PG-TO220-2; 104W
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 12A
Semiconductor structure: single diode
Case: PG-TO220-2
Max. forward voltage: 1.8V
Max. forward impulse current: 83A
Leakage current: 2.4µA
Power dissipation: 104W
Kind of package: tube
Heatsink thickness: 1.17...137mm
товару немає в наявності
В кошику  од. на суму  грн.
IAUT300N08S5N012ATMA2 IAUT300N08S5N012.pdf
IAUT300N08S5N012ATMA2
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 300A; 375W; PG-HSOF-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 300A
Power dissipation: 375W
Case: PG-HSOF-8
Gate-source voltage: ±20V
On-state resistance: 1.2mΩ
Mounting: SMD
Gate charge: 178nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
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BFP193WH6327 BFP193WH6327-dte.pdf
BFP193WH6327
Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 20V; 80mA; 0.58W; SOT343
Case: SOT343
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 0.58W
Polarisation: bipolar
Kind of transistor: RF
Frequency: 6GHz
Collector-emitter voltage: 20V
Collector current: 80mA
Type of transistor: NPN
товару немає в наявності
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IPP60R160P6XKSA1 IPP60R160P6-DTE.pdf
IPP60R160P6XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23.8A; 176W; PG-TO220-3
Case: PG-TO220-3
Mounting: THT
Kind of package: tube
Drain-source voltage: 600V
Drain current: 23.8A
On-state resistance: 0.16Ω
Type of transistor: N-MOSFET
Power dissipation: 176W
Polarisation: unipolar
Technology: CoolMOS™ P6
Kind of channel: enhancement
Gate-source voltage: ±20V
на замовлення 40 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+304.62 грн
3+249.99 грн
5+216.35 грн
12+204.88 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPP60R160C6XKSA1 IPP60R160C6-DTE.pdf
IPP60R160C6XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23.8A; 176W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23.8A
Power dissipation: 176W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IPB80N06S405ATMA2 Infineon-I80N06S4_05-DS-v01_00-en.pdf?fileId=db3a30431ff98815012038d4d5340cec
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 75A; Idm: 320A; 107W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 75A
Pulsed drain current: 320A
Power dissipation: 107W
Case: PG-TO263-3-2
Gate-source voltage: ±20V
On-state resistance: 5.4mΩ
Mounting: SMD
Gate charge: 81nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
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BSS159NH6327XTSA2 BSS159NH6327XTSA2.pdf
BSS159NH6327XTSA2
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.23A; 0.36W; SOT23
Case: SOT23
Mounting: SMD
Drain-source voltage: 60V
Drain current: 0.23A
On-state resistance: 8Ω
Type of transistor: N-MOSFET
Power dissipation: 0.36W
Polarisation: unipolar
Technology: SIPMOS™
Kind of channel: depletion
Gate-source voltage: ±20V
на замовлення 1461 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
18+23.05 грн
25+15.29 грн
99+9.17 грн
270+8.72 грн
Мінімальне замовлення: 18
В кошику  од. на суму  грн.
IRF7465TRPBF irf7465pbf.pdf
IRF7465TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 1.9A; 2.5W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 1.9A
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 2.5W
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BCR401U bcr401u.pdf
BCR401U
Виробник: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Case: SC74
Operating voltage: 1.4...40V DC
Output current: 60mA
Type of integrated circuit: driver
Number of channels: 1
Kind of integrated circuit: current regulator; LED driver
Topology: single transistor
Mounting: SMD
на замовлення 710 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
20+21.74 грн
25+18.19 грн
60+15.52 грн
100+15.29 грн
165+14.68 грн
500+14.37 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
CY7C1520KV18-333BZXI Infineon-CY7C1518KV18_CY7C1520KV18_72-Mbit_DDR_II_SRAM_Two-Word_Burst_Architecture-DataSheet-v23_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec156903611
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; FBGA165; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: FBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 1.7...1.9V DC
Frequency: 333MHz
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IPD95R450P7ATMA1 IPD95R450P7.pdf
IPD95R450P7ATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 8.6A; 104W; DPAK; ESD
Case: DPAK
Mounting: SMD
Kind of package: reel
Drain current: 8.6A
On-state resistance: 0.45Ω
Type of transistor: N-MOSFET
Power dissipation: 104W
Polarisation: unipolar
Version: ESD
Gate charge: 35nC
Technology: CoolMOS™ P7
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: 950V
на замовлення 1540 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+177.01 грн
5+146.78 грн
8+119.26 грн
22+112.38 грн
500+109.32 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IPA65R110CFDXKSA1 IPA65R110CFD-DTE.pdf
IPA65R110CFDXKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 31.2A; 34.7W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 31.2A
Power dissipation: 34.7W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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IPI65R110CFDXKSA1 IPI65R110CFD-DTE.pdf
IPI65R110CFDXKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 31.2A; 277.8W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 31.2A
Power dissipation: 277.8W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: THT
Kind of channel: enhancement
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IPP65R110CFDXKSA1 IPP65R110CFD-DTE.pdf
IPP65R110CFDXKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 31.2A; 277.8W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 31.2A
Power dissipation: 277.8W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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IPG20N04S408ATMA1 IPG20N04S408.pdf
IPG20N04S408ATMA1
Виробник: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; OptiMOS™ T2; unipolar; 40V; 20A; 65W
Mounting: SMD
Drain-source voltage: 40V
Drain current: 20A
On-state resistance: 7.6mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 65W
Polarisation: unipolar
Gate charge: 28nC
Technology: OptiMOS™ T2
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: PG-TDSON-8
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IPG20N04S409ATMA1 IPG20N04S409.pdf
IPG20N04S409ATMA1
Виробник: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; OptiMOS™ T2; unipolar; 40V; 20A; 54W
Mounting: SMD
Drain-source voltage: 40V
Drain current: 20A
On-state resistance: 8.6mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 54W
Polarisation: unipolar
Gate charge: 21.7nC
Technology: OptiMOS™ T2
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: PG-TDSON-8
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IPG20N04S4L11ATMA1 Infineon-IPG20N04S4L_11-DS-v01_00-en.pdf?fileId=db3a30432ba3fa6f012bbf644b016c14
Виробник: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; OptiMOS™ T2; unipolar; 40V; 20A; Idm: 80A
Mounting: SMD
Drain-source voltage: 40V
Drain current: 20A
On-state resistance: 11.6mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 41W
Polarisation: unipolar
Technology: OptiMOS™ T2
Kind of channel: enhancement
Gate-source voltage: ±16V
Pulsed drain current: 80A
Case: PG-TDSON-8-4
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IR2114SSPBF IR2114SSPBF.pdf
IR2114SSPBF
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge; high-/low-side,gate driver; SSOP24
Mounting: SMD
Operating temperature: -40...125°C
Output current: -1.5...1A
Turn-off time: 440ns
Turn-on time: 440ns
Supply voltage: 10.4...20V DC
Number of channels: 2
Case: SSOP24
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT half-bridge
Voltage class: 0.6/1.2kV
Power: 1.5W
Type of integrated circuit: driver
на замовлення 30 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+711.33 грн
2+506.09 грн
3+505.33 грн
5+477.81 грн
В кошику  од. на суму  грн.
IPB037N06N3GATMA1 IPB037N06N3G-DTE.pdf
IPB037N06N3GATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 90A; 188W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: PG-TO263-3
Mounting: SMD
Kind of channel: enhancement
Drain-source voltage: 60V
Drain current: 90A
On-state resistance: 3.7mΩ
Power dissipation: 188W
Technology: OptiMOS™ 3
Gate-source voltage: ±20V
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FB30R06W1E3BOMA1 FB30R06W1E3.pdf
FB30R06W1E3BOMA1
Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; single-phase diode bridge; 115W
Max. off-state voltage: 0.6kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 60A
Power dissipation: 115W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: EasyPIM™ 1B
Topology: IGBT three-phase bridge; NTC thermistor; single-phase diode bridge
Case: AG-EASY1B-1
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FP30R06KE3BPSA1 FP30R06KE3.pdf
Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 30A
Max. off-state voltage: 0.6kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 60A
Application: Inverter
Power dissipation: 125W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: EconoPIM™ 2
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Case: AG-ECONO2C
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TLE4291EXUMA2 Infineon-TLE4291E-DS-v01_10-EN.pdf?fileId=5546d46258fc0bc101595fa0b06f1fce
TLE4291EXUMA2
Виробник: INFINEON TECHNOLOGIES
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.45A; PG-SSOP-14-EP
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 5V
Output current: 0.45A
Case: PG-SSOP-14-EP
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Input voltage: 3.3...42V
Voltage drop: 0.25V
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BFP520H6327XTSA1 BFP520.pdf
BFP520H6327XTSA1
Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; SIEGET™; bipolar; RF; 2.5V; 40mA; 0.1W; SOT343
Type of transistor: NPN
Technology: SIEGET™
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 2.5V
Collector current: 40mA
Power dissipation: 0.1W
Case: SOT343
Mounting: SMD
Kind of package: reel; tape
Frequency: 45GHz
на замовлення 2086 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
13+32.93 грн
18+22.48 грн
50+15.75 грн
76+12.08 грн
209+11.39 грн
500+11.01 грн
Мінімальне замовлення: 13
В кошику  од. на суму  грн.
IPP072N10N3GXKSA1 IPP072N10N3G-DTE.pdf
IPP072N10N3GXKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 150W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80A
Power dissipation: 150W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 7.2mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 23 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+177.01 грн
10+90.97 грн
14+64.98 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
BF888H6327XTSA1 BF888.pdf
BF888H6327XTSA1
Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 4V; 30mA; 0.16W; SOT343
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Power dissipation: 0.16W
Case: SOT343
Kind of package: reel; tape
Frequency: 47GHz
Mounting: SMD
Current gain: 250
Collector-emitter voltage: 4V
Collector current: 30mA
на замовлення 2515 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
14+30.46 грн
70+12.84 грн
191+12.08 грн
Мінімальне замовлення: 14
В кошику  од. на суму  грн.
IRS21531DSTRPBF IRSDS08244-1.pdf?t.download=true&u=5oefqw
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Supply voltage: 10.1...16.8V DC
Turn-on time: 0.12µs
Turn-off time: 50ns
Output current: -260...180mA
Type of integrated circuit: driver
Number of channels: 2
Integrated circuit features: dead time; front end oscillator; integrated bootstrap functionality
Kind of package: reel; tape
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Voltage class: 600V
Mounting: SMD
Operating temperature: -40...125°C
Case: SO8
Power: 625mW
на замовлення 2407 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
6+80.68 грн
10+67.28 грн
18+51.22 грн
48+48.93 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
IRFS7530TRLPBF irfs7530pbf.pdf
IRFS7530TRLPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 295A; 375W; D2PAK; StrongIRFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 295A
Power dissipation: 375W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Gate charge: 274nC
Kind of channel: enhancement
Trade name: StrongIRFET
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BSO220N03MDGXUMA1 BSO220N03MDG-DTE.pdf
BSO220N03MDGXUMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7.7A; 1.56W; PG-DSO-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: PG-DSO-8
Mounting: SMD
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: 30V
Drain current: 7.7A
On-state resistance: 22mΩ
Power dissipation: 1.56W
Technology: OptiMOS™ 3
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IPP037N08N3GXKSA1 IPP037N08N3G-DTE.pdf
IPP037N08N3GXKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; 214W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 100A
Power dissipation: 214W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 150 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+176.19 грн
10+95.56 грн
13+74.92 грн
34+70.33 грн
Мінімальне замовлення: 3
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IPB017N08N5ATMA1 IPB017N08N5-DTE.pdf
IPB017N08N5ATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; 375W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 120A
Power dissipation: 375W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 5
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IPP034N08N5AKSA1 IPP034N08N5-DTE.pdf
IPP034N08N5AKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; 167W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 120A
Power dissipation: 167W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 3.4mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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BCR400WH6327XTSA1 BCR400W.pdf
BCR400WH6327XTSA1
Виробник: INFINEON TECHNOLOGIES
Category: Drivers - integrated circuits
Description: IC: driver; SOT343; 330mW; 1.6÷18VDC; active bias controller
Kind of package: reel; tape
Type of integrated circuit: driver
Integrated circuit features: active bias controller
Mounting: SMD
Case: SOT343
Power: 0.33W
Supply voltage: 1.6...18V DC
на замовлення 2880 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
21+19.76 грн
31+12.69 грн
36+10.86 грн
100+8.94 грн
130+6.88 грн
357+6.50 грн
Мінімальне замовлення: 21
В кошику  од. на суму  грн.
IPP034NE7N3GXKSA1 IPP034NE7N3G-DTE.pdf
IPP034NE7N3GXKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 100A; 214W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 100A
Power dissipation: 214W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 3.4mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 32 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+222.29 грн
3+181.95 грн
6+157.48 грн
16+149.08 грн
Мінімальне замовлення: 2
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BSS606NH6327XTSA1 BSS606NH6327XTSA1.pdf
BSS606NH6327XTSA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3.2A; 1W; PG-SOT89
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3.2A
Power dissipation: 1W
Case: PG-SOT89
Gate-source voltage: ±20V
On-state resistance: 90mΩ
Mounting: SMD
Kind of channel: enhancement
на замовлення 945 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
11+38.69 грн
16+24.39 грн
50+20.03 грн
75+12.00 грн
206+11.31 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
IAUT260N10S5N019ATMA1 IAUT260N10S5N019.pdf
IAUT260N10S5N019ATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 260A; 300W; PG-HSOF-8
Case: PG-HSOF-8
Drain-source voltage: 100V
Drain current: 260A
On-state resistance: 1.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 54nC
Technology: OptiMOS™ 5
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
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IPI020N06NAKSA1 IPI020N06N-DTE.pdf
IPI020N06NAKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 214W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Power dissipation: 214W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: THT
Kind of channel: enhancement
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IAUS165N08S5N029ATMA1 IAUS165N08S5N029.pdf
IAUS165N08S5N029ATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 165A; Idm: 660A; 167W
Mounting: SMD
Case: PG-HSOG-8
Drain-source voltage: 80V
Drain current: 165A
On-state resistance: 2.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 167W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 31nC
Technology: OptiMOS™ 5
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 660A
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