Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (149543) > Сторінка 2458 з 2493
Фото | Назва | Виробник | Інформація |
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IRFU5305PBF | INFINEON TECHNOLOGIES |
![]() ![]() Description: Transistor: P-MOSFET; unipolar; -55V; -28A; 89W; IPAK Mounting: THT Case: IPAK Kind of channel: enhancement Technology: HEXFET® Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -55V Drain current: -28A Power dissipation: 89W |
на замовлення 1079 шт: термін постачання 21-30 дні (днів) |
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IRFB7540PBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 160W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 80A Power dissipation: 160W Case: TO220AB On-state resistance: 5.1mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Gate-source voltage: ±20V Gate charge: 88nC |
на замовлення 176 шт: термін постачання 21-30 дні (днів) |
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SMBT3904SH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: NPN; bipolar; 40V; 0.2A; 0.25W; SOT363 Case: SOT363 Type of transistor: NPN Mounting: SMD Collector current: 0.2A Power dissipation: 0.25W Collector-emitter voltage: 40V Frequency: 300MHz Polarisation: bipolar |
на замовлення 88 шт: термін постачання 21-30 дні (днів) |
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AIKW20N60CTXKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 600V; 20A; 166W; TO247-3 Type of transistor: IGBT Technology: TRENCHSTOP™ Power dissipation: 166W Case: TO247-3 Mounting: THT Kind of package: tube Collector-emitter voltage: 600V Features of semiconductor devices: integrated anti-parallel diode Gate charge: 0.12µC Turn-on time: 32ns Turn-off time: 241ns Collector current: 20A Gate-emitter voltage: ±20V Pulsed collector current: 60A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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IRLR8103VTRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 89A; 89W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 89A Power dissipation: 89W Case: DPAK Mounting: SMD Kind of package: reel Kind of channel: enhancement Features of semiconductor devices: logic level |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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IRFB4615PBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 150V; 35A; 144W; TO220AB Case: TO220AB Mounting: THT Kind of package: tube Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 26nC On-state resistance: 39mΩ Drain current: 35A Gate-source voltage: ±20V Power dissipation: 144W Drain-source voltage: 150V Kind of channel: enhancement Technology: HEXFET® |
на замовлення 55 шт: термін постачання 21-30 дні (днів) |
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IRFML8244TRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 25V; 5.8A; 1.25W; SOT23 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 25V Drain current: 5.8A Power dissipation: 1.25W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 24mΩ Mounting: SMD Gate charge: 5.4nC Kind of channel: enhancement |
на замовлення 4947 шт: термін постачання 21-30 дні (днів) |
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BCR185WH6327 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.25W; SOT323; R1: 10kΩ Type of transistor: PNP Polarisation: bipolar Power dissipation: 0.25W Case: SOT323 Mounting: SMD Collector-emitter voltage: 50V Base resistor: 10kΩ Base-emitter resistor: 47kΩ Frequency: 200MHz Kind of transistor: BRT Collector current: 0.1A |
на замовлення 769 шт: термін постачання 21-30 дні (днів) |
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SPP80P06PHXKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -60V; -80A; 340W; PG-TO220-3 Case: PG-TO220-3 Kind of package: tube Kind of channel: enhancement Mounting: THT Type of transistor: P-MOSFET Technology: SIPMOS™ Polarisation: unipolar Drain current: -80A Drain-source voltage: -60V Gate-source voltage: ±20V On-state resistance: 23mΩ Power dissipation: 340W |
на замовлення 43 шт: термін постачання 21-30 дні (днів) |
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IRS2186STRPBF | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO8 Output current: -4...4A Power: 625mW Number of channels: 2 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Voltage class: 600V Turn-on time: 192ns Turn-off time: 188ns |
на замовлення 1363 шт: термін постачання 21-30 дні (днів) |
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AIGW50N65H5XKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 650V; 53.5A; 136W; TO247-3; H5 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 53.5A Power dissipation: 136W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 150A Mounting: THT Gate charge: 116nC Kind of package: tube Turn-on time: 33ns Turn-off time: 184ns Technology: TRENCHSTOP™ 5 Manufacturer series: H5 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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AIKP20N60CTAKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 600V; 20A; 156W; TO220-3 Type of transistor: IGBT Technology: TRENCHSTOP™ Power dissipation: 156W Case: TO220-3 Mounting: THT Kind of package: tube Collector-emitter voltage: 600V Features of semiconductor devices: integrated anti-parallel diode Gate charge: 0.12µC Turn-on time: 32ns Turn-off time: 241ns Collector current: 20A Gate-emitter voltage: ±20V Pulsed collector current: 60A |
на замовлення 306 шт: термін постачання 21-30 дні (днів) |
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AIKB20N60CTATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 600V; 20A; 156W; D2PAK Type of transistor: IGBT Technology: TRENCHSTOP™ Power dissipation: 156W Case: D2PAK Mounting: SMD Kind of package: reel; tape Collector-emitter voltage: 600V Features of semiconductor devices: integrated anti-parallel diode Gate charge: 0.12µC Turn-on time: 32ns Turn-off time: 241ns Collector current: 20A Gate-emitter voltage: ±20V Pulsed collector current: 60A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
IKQ120N60TXKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 600V; 120A; 833W; PG-TO247-3-46 Type of transistor: IGBT Technology: TRENCHSTOP™ Power dissipation: 833W Case: PG-TO247-3-46 Mounting: THT Kind of package: tube Collector-emitter voltage: 600V Features of semiconductor devices: integrated anti-parallel diode Gate charge: 703nC Turn-on time: 76ns Turn-off time: 343ns Collector current: 120A Gate-emitter voltage: ±20V Pulsed collector current: 480A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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IKQ120N60TAXKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 600V; 120A; 833W; TO247-3 Type of transistor: IGBT Technology: TRENCHSTOP™ Power dissipation: 833W Case: TO247-3 Mounting: THT Kind of package: tube Collector-emitter voltage: 600V Features of semiconductor devices: integrated anti-parallel diode Gate charge: 772nC Turn-on time: 76ns Turn-off time: 343ns Collector current: 120A Gate-emitter voltage: ±20V Pulsed collector current: 480A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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TT122N22KOFHPSA2 | INFINEON TECHNOLOGIES |
![]() Description: Module: thyristor; double series; 2.2kV; 122A; BG-PB34-1; screw Type of semiconductor module: thyristor Semiconductor structure: double series Max. off-state voltage: 2.2kV Load current: 122A Case: BG-PB34-1 Max. forward voltage: 1.95V Max. forward impulse current: 3.3kA Gate current: 200mA Electrical mounting: FASTON connectors; screw Mechanical mounting: screw |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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IRFR15N20DTRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 200V; 17A; 140W; DPAK Type of transistor: N-MOSFET Mounting: SMD Polarisation: unipolar Drain current: 17A Power dissipation: 140W Drain-source voltage: 200V Kind of package: reel Case: DPAK Kind of channel: enhancement Technology: HEXFET® |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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IPB073N15N5ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 150V; 81A; 214W; PG-TO263-3 Case: PG-TO263-3 Mounting: SMD Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 49nC On-state resistance: 7.3mΩ Drain current: 81A Gate-source voltage: ±20V Power dissipation: 214W Drain-source voltage: 150V Kind of channel: enhancement Technology: OptiMOS™ 5 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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XMC1202T028X0032ABXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: ARM microcontroller; PG-TSSOP-28; 16kBSRAM,32kBFLASH Case: PG-TSSOP-28 Memory: 16kB SRAM; 32kB FLASH Kind of core: 32-bit Integrated circuit features: ACMP x3; BCCU; EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog Type of integrated circuit: ARM microcontroller Interface: GPIO Kind of architecture: Cortex M0 Family: XMC1200 Operating temperature: -40...105°C Supply voltage: 1.8...5.5V DC Number of 16bit timers: 4 Number of A/D channels: 10 Number of inputs/outputs: 26 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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XMC1202T028X0064ABXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: ARM microcontroller; PG-TSSOP-28; 16kBSRAM,64kBFLASH Case: PG-TSSOP-28 Memory: 16kB SRAM; 64kB FLASH Kind of core: 32-bit Integrated circuit features: ACMP x3; BCCU; EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog Type of integrated circuit: ARM microcontroller Interface: GPIO Kind of architecture: Cortex M0 Family: XMC1200 Operating temperature: -40...105°C Supply voltage: 1.8...5.5V DC Number of 16bit timers: 4 Number of A/D channels: 10 Number of inputs/outputs: 26 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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AIHD10N60RATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 10A; 150W; DPAK Type of transistor: IGBT Technology: TRENCHSTOP™ RC Power dissipation: 150W Case: DPAK Mounting: SMD Kind of package: reel; tape Gate-emitter voltage: ±20V Pulsed collector current: 30A Collector-emitter voltage: 600V Features of semiconductor devices: reverse conducting IGBT (RC-IGBT) Gate charge: 64nC Turn-on time: 24ns Turn-off time: 331ns Collector current: 10A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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IRFB4610PBF | INFINEON TECHNOLOGIES |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 100V; 73A; 190W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 73A Power dissipation: 190W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 14mΩ Mounting: THT Gate charge: 90nC Kind of package: tube Kind of channel: enhancement Technology: HEXFET® |
на замовлення 325 шт: термін постачання 21-30 дні (днів) |
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IRFB4620PBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 200V; 25A; 144W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 25A Power dissipation: 144W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 72.5mΩ Mounting: THT Gate charge: 25nC Kind of package: tube Kind of channel: enhancement Technology: HEXFET® |
на замовлення 304 шт: термін постачання 21-30 дні (днів) |
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BFP183WH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: NPN; bipolar; RF; 12V; 65mA; 0.45W; SOT343 Type of transistor: NPN Polarisation: bipolar Power dissipation: 0.45W Case: SOT343 Mounting: SMD Collector-emitter voltage: 12V Current gain: 70...140 Frequency: 8GHz Kind of transistor: RF Kind of package: reel; tape Collector current: 65mA |
на замовлення 2214 шт: термін постачання 21-30 дні (днів) |
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BFP196WH6327 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: NPN; bipolar; RF; 20V; 0.15A; 0.7W; SOT343 Type of transistor: NPN Polarisation: bipolar Power dissipation: 0.7W Case: SOT343 Mounting: SMD Collector-emitter voltage: 20V Frequency: 5GHz Kind of transistor: RF Kind of package: reel; tape Collector current: 0.15A |
на замовлення 5673 шт: термін постачання 21-30 дні (днів) |
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BFR181WH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: NPN; bipolar; RF; 12V; 20mA; 0.175W; SOT323 Type of transistor: NPN Polarisation: bipolar Power dissipation: 0.175W Case: SOT323 Mounting: SMD Collector-emitter voltage: 12V Frequency: 8GHz Kind of transistor: RF Kind of package: reel; tape Collector current: 20mA |
на замовлення 1840 шт: термін постачання 21-30 дні (днів) |
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SPD04N80C3ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 2.5A; Idm: 12A; 63W Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 2.5A Pulsed drain current: 12A Power dissipation: 63W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 1.3Ω Mounting: SMD Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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SPP04N80C3 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 4A; 63W; PG-TO220-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 4A Power dissipation: 63W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 1.3Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
на замовлення 367 шт: термін постачання 21-30 дні (днів) |
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IRFB7530PBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 295A; 375W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 295A Power dissipation: 375W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 2mΩ Mounting: THT Gate charge: 274nC Kind of package: tube Kind of channel: enhancement Trade name: StrongIRFET |
на замовлення 165 шт: термін постачання 21-30 дні (днів) |
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IRFP7530PBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 281A; 341W; TO247AC Technology: HEXFET® Case: TO247AC Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: THT Trade name: StrongIRFET Drain-source voltage: 60V Drain current: 281A Gate charge: 274nC On-state resistance: 2mΩ Power dissipation: 341W Gate-source voltage: ±20V Polarisation: unipolar Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BSS209PWH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -0.63A; 0.3W; PG-SOT-323 Type of transistor: P-MOSFET Technology: OptiMOS™ P Polarisation: unipolar Drain-source voltage: -20V Drain current: -0.63A Power dissipation: 0.3W Case: PG-SOT-323 Gate-source voltage: ±12V On-state resistance: 0.55Ω Mounting: SMD Kind of channel: enhancement |
на замовлення 3649 шт: термін постачання 21-30 дні (днів) |
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BSP171PH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -60V; -1.9A; 1.8W; PG-SOT223 Case: PG-SOT223 Technology: SIPMOS™ Mounting: SMD Drain-source voltage: -60V Drain current: -1.9A On-state resistance: 0.3Ω Power dissipation: 1.8W Gate-source voltage: ±20V Polarisation: unipolar Kind of channel: enhancement Type of transistor: P-MOSFET |
на замовлення 822 шт: термін постачання 21-30 дні (днів) |
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IRFB7440PBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 208A; 208W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 208A Power dissipation: 208W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 2.5mΩ Mounting: THT Gate charge: 90nC Kind of package: tube Kind of channel: enhancement Trade name: StrongIRFET |
на замовлення 925 шт: термін постачання 21-30 дні (днів) |
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IRFR4104TRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 119A; 140W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 119A Case: DPAK Mounting: SMD Kind of package: reel Kind of channel: enhancement Power dissipation: 140W Technology: HEXFET® |
на замовлення 1175 шт: термін постачання 21-30 дні (днів) |
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BAT6402VH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: Schottky rectifying; SC79; SMD; 40V; 0.25A; 250mW Mounting: SMD Case: SC79 Type of diode: Schottky rectifying Semiconductor structure: single diode Load current: 0.25A Power dissipation: 0.25W Max. forward impulse current: 0.8A Max. off-state voltage: 40V |
на замовлення 10275 шт: термін постачання 21-30 дні (днів) |
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TLE4906KHTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Sensor: Hall; unipolar; SC59; 5÷13.5mT; Usup: 2.7÷18VDC; SMT Type of sensor: Hall Case: SC59 Range of detectable magnetic field: 5...13.5mT Supply voltage: 2.7...18V DC Operating temperature: -40...150°C Mounting: SMT Kind of sensor: unipolar |
на замовлення 891 шт: термін постачання 21-30 дні (днів) |
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TLE4935L | INFINEON TECHNOLOGIES |
![]() Description: Sensor: Hall; latch; P-SSO-3-2; -20÷20mT; Usup: 3.8÷24VDC; THT Type of sensor: Hall Case: P-SSO-3-2 Range of detectable magnetic field: -20...20mT Supply voltage: 3.8...24V DC Operating temperature: -40...150°C Mounting: THT Kind of sensor: latch |
на замовлення 366 шт: термін постачання 21-30 дні (днів) |
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BSS816NWH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 20V; 1.4A; 0.5W; SOT323 Type of transistor: N-MOSFET Technology: OptiMOS™ 2 Polarisation: unipolar Drain-source voltage: 20V Drain current: 1.4A Power dissipation: 0.5W Case: SOT323 Gate-source voltage: ±8V On-state resistance: 0.24Ω Mounting: SMD Kind of channel: enhancement |
на замовлення 159 шт: термін постачання 21-30 дні (днів) |
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BAT1704WH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: Schottky switching; SOT323; SMD; 4V; 0.13A; 150mW Power dissipation: 0.15W Case: SOT323 Mounting: SMD Load current: 0.13A Max. off-state voltage: 4V Semiconductor structure: double series Type of diode: Schottky switching |
на замовлення 142 шт: термін постачання 21-30 дні (днів) |
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BFP405H6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: NPN; SIEGET™; bipolar; RF; 4.5V; 25mA; 0.075W; SOT343 Kind of package: reel; tape Polarisation: bipolar Technology: SIEGET™ Type of transistor: NPN Mounting: SMD Case: SOT343 Kind of transistor: RF Collector current: 25mA Power dissipation: 75mW Collector-emitter voltage: 4.5V Current gain: 90...130 Frequency: 25GHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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IRFS4229TRLPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 250V; 45A; 330W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 250V Drain current: 45A Power dissipation: 330W Case: D2PAK Mounting: SMD Kind of package: reel Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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IRFS4321TRLPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 150V; 83A; 330W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 150V Drain current: 83A Power dissipation: 330W Case: D2PAK Mounting: SMD Kind of package: reel Kind of channel: enhancement |
на замовлення 433 шт: термін постачання 21-30 дні (днів) |
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PVT322PBF | INFINEON TECHNOLOGIES |
![]() Description: Relay: solid state; DPST-NO; Icntrl: 2÷25mA; 500mA; 0÷250VAC; 10Ω Type of relay: solid state Contacts configuration: DPST-NO Control current: 2...25mA Max. operating current: 0.5A Switched voltage: 0...250V AC; 0...250V DC Manufacturer series: PVT322PbF Relay variant: MOSFET On-state resistance: 10Ω Mounting: THT Case: DIP8 Operate time: 3ms Release time: 0.5ms Operating temperature: -40...85°C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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IRFHM830TRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 21A; 2.7W; PQFN3.3X3.3 Mounting: SMD Case: PQFN3.3X3.3 Kind of package: reel Polarisation: unipolar Type of transistor: N-MOSFET Power dissipation: 2.7W Drain-source voltage: 30V Drain current: 21A Technology: HEXFET® Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BSS223PWH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -0.39A; 0.25W; PG-SOT-323 Type of transistor: P-MOSFET Technology: OptiMOS™ P Polarisation: unipolar Drain-source voltage: -20V Drain current: -0.39A Power dissipation: 0.25W Case: PG-SOT-323 Gate-source voltage: ±12V On-state resistance: 1.2Ω Mounting: SMD Kind of channel: enhancement |
на замовлення 1265 шт: термін постачання 21-30 дні (днів) |
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IRFS4310TRLPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 140A; 330W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 140A Power dissipation: 330W Case: D2PAK Mounting: SMD Kind of package: reel Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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IRFS7437TRLPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 230W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 180A Power dissipation: 230W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 1.4mΩ Mounting: SMD Kind of channel: enhancement |
на замовлення 640 шт: термін постачання 21-30 дні (днів) |
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BSC252N10NSFGATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 40A; 78W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 2 Polarisation: unipolar Drain-source voltage: 100V Drain current: 40A Power dissipation: 78W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 25.2mΩ Mounting: SMD Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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IRLR6225TRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 20V; 100A; 63W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 20V Drain current: 100A Power dissipation: 63W Case: DPAK Mounting: SMD Kind of package: reel Kind of channel: enhancement Features of semiconductor devices: logic level |
на замовлення 1976 шт: термін постачання 21-30 дні (днів) |
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IRF7410TRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -12V; -16A; 2.5W; SO8 Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -12V Drain current: -16A Power dissipation: 2.5W Case: SO8 Mounting: SMD Kind of package: reel Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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IRFB7446PBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 123A; 99W; TO220AB Polarisation: unipolar Case: TO220AB Kind of channel: enhancement Technology: HEXFET® Type of transistor: N-MOSFET Mounting: THT Trade name: StrongIRFET Drain-source voltage: 40V Drain current: 123A Gate charge: 62nC On-state resistance: 3.3mΩ Power dissipation: 99W Gate-source voltage: ±20V Kind of package: tube |
на замовлення 101 шт: термін постачання 21-30 дні (днів) |
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IRF7832TRPBF | INFINEON TECHNOLOGIES |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 30V; 20A; 2.5W; SO8 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 20A Power dissipation: 2.5W Case: SO8 Mounting: SMD Kind of package: reel Kind of channel: enhancement |
на замовлення 512 шт: термін постачання 21-30 дні (днів) |
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BSP135H6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 0.12A; 1.8W; SOT223 Mounting: SMD Polarisation: unipolar Drain current: 0.12A Power dissipation: 1.8W Gate-source voltage: ±20V On-state resistance: 60Ω Drain-source voltage: 600V Case: SOT223 Kind of channel: depletion Type of transistor: N-MOSFET Technology: SIPMOS™ |
на замовлення 1438 шт: термін постачання 21-30 дні (днів) |
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IAUZ40N08S5N100ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 80V; 40A; Idm: 160A; 68W Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 80V Drain current: 40A Pulsed drain current: 160A Power dissipation: 68W Case: PG-TSDSON-8 Gate-source voltage: ±20V On-state resistance: 14.5mΩ Mounting: SMD Gate charge: 24.2nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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IRS2101SPBF | INFINEON TECHNOLOGIES |
![]() ![]() Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO8 Output current: -600...290mA Power: 625mW Number of channels: 2 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V Turn-on time: 230ns Turn-off time: 185ns Part status: Not recommended for new designs |
на замовлення 172 шт: термін постачання 21-30 дні (днів) |
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BAT1705WH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: Schottky switching; SOT323; SMD; 4V; 0.13A; 150mW Power dissipation: 0.15W Case: SOT323 Mounting: SMD Load current: 0.13A Max. off-state voltage: 4V Semiconductor structure: common cathode; double Type of diode: Schottky switching |
на замовлення 653 шт: термін постачання 21-30 дні (днів) |
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IRLMS5703TRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -2.3A; 1.7W; TSOP6 Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -30V Drain current: -2.3A Power dissipation: 1.7W Case: TSOP6 Mounting: SMD Kind of package: reel Kind of channel: enhancement Features of semiconductor devices: logic level |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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IRS2168DSTRPBF | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; MOSFET half-bridge; SO16; -260÷180mA; 1.4W; Ch: 2; 600V Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: ballast controller; gate driver; high-/low-side; PFC controller Case: SO16 Output current: -260...180mA Power: 1.4W Number of channels: 2 Supply voltage: 11.5...16.6V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Voltage class: 600V Turn-on time: 0.12µs Turn-off time: 50ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BGSX22G2A10E6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: RF switch; DPDT; Ch: 2; ATSLP-10-2; 1.65÷3.4VDC; 0.1÷6GHz Output configuration: DPDT Application: telecommunication Mounting: SMD Type of integrated circuit: RF switch Supply voltage: 1.65...3.4V DC Number of channels: 2 Bandwidth: 0.1...6GHz Case: ATSLP-10-2 |
на замовлення 61 шт: термін постачання 21-30 дні (днів) |
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BAT6405WH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: Schottky rectifying; SOT323; SMD; 40V; 0.25A; 250mW Power dissipation: 0.25W Case: SOT323 Mounting: SMD Load current: 0.25A Max. forward impulse current: 0.8A Max. off-state voltage: 40V Semiconductor structure: common cathode; double Type of diode: Schottky rectifying |
на замовлення 2500 шт: термін постачання 21-30 дні (днів) |
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IRFU5305PBF | ![]() |
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Виробник: INFINEON TECHNOLOGIES
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -28A; 89W; IPAK
Mounting: THT
Case: IPAK
Kind of channel: enhancement
Technology: HEXFET®
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -28A
Power dissipation: 89W
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -28A; 89W; IPAK
Mounting: THT
Case: IPAK
Kind of channel: enhancement
Technology: HEXFET®
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -28A
Power dissipation: 89W
на замовлення 1079 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
8+ | 55.42 грн |
10+ | 45.13 грн |
25+ | 40.61 грн |
27+ | 34.84 грн |
74+ | 32.94 грн |
150+ | 31.67 грн |
IRFB7540PBF |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 160W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 80A
Power dissipation: 160W
Case: TO220AB
On-state resistance: 5.1mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate-source voltage: ±20V
Gate charge: 88nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 160W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 80A
Power dissipation: 160W
Case: TO220AB
On-state resistance: 5.1mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate-source voltage: ±20V
Gate charge: 88nC
на замовлення 176 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4+ | 133.86 грн |
7+ | 61.60 грн |
10+ | 50.91 грн |
23+ | 41.33 грн |
50+ | 41.09 грн |
62+ | 39.11 грн |
SMBT3904SH6327XTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 0.25W; SOT363
Case: SOT363
Type of transistor: NPN
Mounting: SMD
Collector current: 0.2A
Power dissipation: 0.25W
Collector-emitter voltage: 40V
Frequency: 300MHz
Polarisation: bipolar
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 0.25W; SOT363
Case: SOT363
Type of transistor: NPN
Mounting: SMD
Collector current: 0.2A
Power dissipation: 0.25W
Collector-emitter voltage: 40V
Frequency: 300MHz
Polarisation: bipolar
на замовлення 88 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
80+ | 5.39 грн |
AIKW20N60CTXKSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 166W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 166W
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 0.12µC
Turn-on time: 32ns
Turn-off time: 241ns
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 166W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 166W
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 0.12µC
Turn-on time: 32ns
Turn-off time: 241ns
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
товару немає в наявності
В кошику
од. на суму грн.
IRLR8103VTRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 89A; 89W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 89A
Power dissipation: 89W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 89A; 89W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 89A
Power dissipation: 89W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
товару немає в наявності
В кошику
од. на суму грн.
IRFB4615PBF |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 35A; 144W; TO220AB
Case: TO220AB
Mounting: THT
Kind of package: tube
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 26nC
On-state resistance: 39mΩ
Drain current: 35A
Gate-source voltage: ±20V
Power dissipation: 144W
Drain-source voltage: 150V
Kind of channel: enhancement
Technology: HEXFET®
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 35A; 144W; TO220AB
Case: TO220AB
Mounting: THT
Kind of package: tube
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 26nC
On-state resistance: 39mΩ
Drain current: 35A
Gate-source voltage: ±20V
Power dissipation: 144W
Drain-source voltage: 150V
Kind of channel: enhancement
Technology: HEXFET®
на замовлення 55 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
6+ | 66.50 грн |
10+ | 60.17 грн |
19+ | 49.88 грн |
51+ | 47.50 грн |
IRFML8244TRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 5.8A; 1.25W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 5.8A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 5.4nC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 5.8A; 1.25W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 5.8A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 5.4nC
Kind of channel: enhancement
на замовлення 4947 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
23+ | 18.76 грн |
29+ | 14.09 грн |
32+ | 12.43 грн |
100+ | 7.92 грн |
172+ | 5.46 грн |
472+ | 5.15 грн |
3000+ | 5.07 грн |
BCR185WH6327 |
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Виробник: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.25W; SOT323; R1: 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Power dissipation: 0.25W
Case: SOT323
Mounting: SMD
Collector-emitter voltage: 50V
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Frequency: 200MHz
Kind of transistor: BRT
Collector current: 0.1A
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.25W; SOT323; R1: 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Power dissipation: 0.25W
Case: SOT323
Mounting: SMD
Collector-emitter voltage: 50V
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Frequency: 200MHz
Kind of transistor: BRT
Collector current: 0.1A
на замовлення 769 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
81+ | 5.29 грн |
100+ | 4.41 грн |
250+ | 3.90 грн |
272+ | 3.44 грн |
745+ | 3.25 грн |
SPP80P06PHXKSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -80A; 340W; PG-TO220-3
Case: PG-TO220-3
Kind of package: tube
Kind of channel: enhancement
Mounting: THT
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain current: -80A
Drain-source voltage: -60V
Gate-source voltage: ±20V
On-state resistance: 23mΩ
Power dissipation: 340W
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -80A; 340W; PG-TO220-3
Case: PG-TO220-3
Kind of package: tube
Kind of channel: enhancement
Mounting: THT
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain current: -80A
Drain-source voltage: -60V
Gate-source voltage: ±20V
On-state resistance: 23mΩ
Power dissipation: 340W
на замовлення 43 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 265.16 грн |
6+ | 163.09 грн |
16+ | 154.38 грн |
IRS2186STRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -4...4A
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 192ns
Turn-off time: 188ns
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -4...4A
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 192ns
Turn-off time: 188ns
на замовлення 1363 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4+ | 138.98 грн |
10+ | 106.09 грн |
11+ | 87.09 грн |
30+ | 82.34 грн |
1000+ | 79.17 грн |
AIGW50N65H5XKSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 53.5A; 136W; TO247-3; H5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 53.5A
Power dissipation: 136W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 116nC
Kind of package: tube
Turn-on time: 33ns
Turn-off time: 184ns
Technology: TRENCHSTOP™ 5
Manufacturer series: H5
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 53.5A; 136W; TO247-3; H5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 53.5A
Power dissipation: 136W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 116nC
Kind of package: tube
Turn-on time: 33ns
Turn-off time: 184ns
Technology: TRENCHSTOP™ 5
Manufacturer series: H5
товару немає в наявності
В кошику
од. на суму грн.
AIKP20N60CTAKSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 156W; TO220-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 156W
Case: TO220-3
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 0.12µC
Turn-on time: 32ns
Turn-off time: 241ns
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 156W; TO220-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 156W
Case: TO220-3
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 0.12µC
Turn-on time: 32ns
Turn-off time: 241ns
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
на замовлення 306 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 315.47 грн |
3+ | 258.89 грн |
5+ | 224.06 грн |
12+ | 211.39 грн |
250+ | 204.26 грн |
AIKB20N60CTATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 156W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 156W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 0.12µC
Turn-on time: 32ns
Turn-off time: 241ns
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 156W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 156W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 0.12µC
Turn-on time: 32ns
Turn-off time: 241ns
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
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IKQ120N60TXKSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 120A; 833W; PG-TO247-3-46
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 833W
Case: PG-TO247-3-46
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 703nC
Turn-on time: 76ns
Turn-off time: 343ns
Collector current: 120A
Gate-emitter voltage: ±20V
Pulsed collector current: 480A
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 120A; 833W; PG-TO247-3-46
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 833W
Case: PG-TO247-3-46
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 703nC
Turn-on time: 76ns
Turn-off time: 343ns
Collector current: 120A
Gate-emitter voltage: ±20V
Pulsed collector current: 480A
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IKQ120N60TAXKSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 120A; 833W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 833W
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 772nC
Turn-on time: 76ns
Turn-off time: 343ns
Collector current: 120A
Gate-emitter voltage: ±20V
Pulsed collector current: 480A
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 120A; 833W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 833W
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 772nC
Turn-on time: 76ns
Turn-off time: 343ns
Collector current: 120A
Gate-emitter voltage: ±20V
Pulsed collector current: 480A
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В кошику
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TT122N22KOFHPSA2 |
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Виробник: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 122A; BG-PB34-1; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 122A
Case: BG-PB34-1
Max. forward voltage: 1.95V
Max. forward impulse current: 3.3kA
Gate current: 200mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 122A; BG-PB34-1; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 122A
Case: BG-PB34-1
Max. forward voltage: 1.95V
Max. forward impulse current: 3.3kA
Gate current: 200mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
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В кошику
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IRFR15N20DTRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 17A; 140W; DPAK
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Drain current: 17A
Power dissipation: 140W
Drain-source voltage: 200V
Kind of package: reel
Case: DPAK
Kind of channel: enhancement
Technology: HEXFET®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 17A; 140W; DPAK
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Drain current: 17A
Power dissipation: 140W
Drain-source voltage: 200V
Kind of package: reel
Case: DPAK
Kind of channel: enhancement
Technology: HEXFET®
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В кошику
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IPB073N15N5ATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 81A; 214W; PG-TO263-3
Case: PG-TO263-3
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 49nC
On-state resistance: 7.3mΩ
Drain current: 81A
Gate-source voltage: ±20V
Power dissipation: 214W
Drain-source voltage: 150V
Kind of channel: enhancement
Technology: OptiMOS™ 5
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 81A; 214W; PG-TO263-3
Case: PG-TO263-3
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 49nC
On-state resistance: 7.3mΩ
Drain current: 81A
Gate-source voltage: ±20V
Power dissipation: 214W
Drain-source voltage: 150V
Kind of channel: enhancement
Technology: OptiMOS™ 5
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XMC1202T028X0032ABXUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-28; 16kBSRAM,32kBFLASH
Case: PG-TSSOP-28
Memory: 16kB SRAM; 32kB FLASH
Kind of core: 32-bit
Integrated circuit features: ACMP x3; BCCU; EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Type of integrated circuit: ARM microcontroller
Interface: GPIO
Kind of architecture: Cortex M0
Family: XMC1200
Operating temperature: -40...105°C
Supply voltage: 1.8...5.5V DC
Number of 16bit timers: 4
Number of A/D channels: 10
Number of inputs/outputs: 26
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-28; 16kBSRAM,32kBFLASH
Case: PG-TSSOP-28
Memory: 16kB SRAM; 32kB FLASH
Kind of core: 32-bit
Integrated circuit features: ACMP x3; BCCU; EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Type of integrated circuit: ARM microcontroller
Interface: GPIO
Kind of architecture: Cortex M0
Family: XMC1200
Operating temperature: -40...105°C
Supply voltage: 1.8...5.5V DC
Number of 16bit timers: 4
Number of A/D channels: 10
Number of inputs/outputs: 26
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XMC1202T028X0064ABXUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-28; 16kBSRAM,64kBFLASH
Case: PG-TSSOP-28
Memory: 16kB SRAM; 64kB FLASH
Kind of core: 32-bit
Integrated circuit features: ACMP x3; BCCU; EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Type of integrated circuit: ARM microcontroller
Interface: GPIO
Kind of architecture: Cortex M0
Family: XMC1200
Operating temperature: -40...105°C
Supply voltage: 1.8...5.5V DC
Number of 16bit timers: 4
Number of A/D channels: 10
Number of inputs/outputs: 26
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-28; 16kBSRAM,64kBFLASH
Case: PG-TSSOP-28
Memory: 16kB SRAM; 64kB FLASH
Kind of core: 32-bit
Integrated circuit features: ACMP x3; BCCU; EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Type of integrated circuit: ARM microcontroller
Interface: GPIO
Kind of architecture: Cortex M0
Family: XMC1200
Operating temperature: -40...105°C
Supply voltage: 1.8...5.5V DC
Number of 16bit timers: 4
Number of A/D channels: 10
Number of inputs/outputs: 26
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AIHD10N60RATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 10A; 150W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Power dissipation: 150W
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Collector-emitter voltage: 600V
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Gate charge: 64nC
Turn-on time: 24ns
Turn-off time: 331ns
Collector current: 10A
Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 10A; 150W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Power dissipation: 150W
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Collector-emitter voltage: 600V
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Gate charge: 64nC
Turn-on time: 24ns
Turn-off time: 331ns
Collector current: 10A
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IRFB4610PBF | ![]() |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 73A; 190W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 73A
Power dissipation: 190W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: THT
Gate charge: 90nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 73A; 190W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 73A
Power dissipation: 190W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: THT
Gate charge: 90nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
на замовлення 325 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3+ | 150.43 грн |
10+ | 135.38 грн |
14+ | 70.46 грн |
37+ | 66.50 грн |
IRFB4620PBF |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 25A; 144W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 25A
Power dissipation: 144W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 72.5mΩ
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 25A; 144W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 25A
Power dissipation: 144W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 72.5mΩ
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
на замовлення 304 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3+ | 144.09 грн |
7+ | 134.59 грн |
10+ | 122.72 грн |
BFP183WH6327XTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 12V; 65mA; 0.45W; SOT343
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 0.45W
Case: SOT343
Mounting: SMD
Collector-emitter voltage: 12V
Current gain: 70...140
Frequency: 8GHz
Kind of transistor: RF
Kind of package: reel; tape
Collector current: 65mA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 12V; 65mA; 0.45W; SOT343
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 0.45W
Case: SOT343
Mounting: SMD
Collector-emitter voltage: 12V
Current gain: 70...140
Frequency: 8GHz
Kind of transistor: RF
Kind of package: reel; tape
Collector current: 65mA
на замовлення 2214 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
28+ | 15.35 грн |
35+ | 11.56 грн |
39+ | 10.21 грн |
46+ | 8.79 грн |
50+ | 8.00 грн |
100+ | 7.28 грн |
250+ | 7.20 грн |
BFP196WH6327 |
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Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 20V; 0.15A; 0.7W; SOT343
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 0.7W
Case: SOT343
Mounting: SMD
Collector-emitter voltage: 20V
Frequency: 5GHz
Kind of transistor: RF
Kind of package: reel; tape
Collector current: 0.15A
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 20V; 0.15A; 0.7W; SOT343
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 0.7W
Case: SOT343
Mounting: SMD
Collector-emitter voltage: 20V
Frequency: 5GHz
Kind of transistor: RF
Kind of package: reel; tape
Collector current: 0.15A
на замовлення 5673 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
16+ | 28.14 грн |
20+ | 20.19 грн |
100+ | 12.51 грн |
157+ | 5.94 грн |
430+ | 5.62 грн |
BFR181WH6327XTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 12V; 20mA; 0.175W; SOT323
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 0.175W
Case: SOT323
Mounting: SMD
Collector-emitter voltage: 12V
Frequency: 8GHz
Kind of transistor: RF
Kind of package: reel; tape
Collector current: 20mA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 12V; 20mA; 0.175W; SOT323
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 0.175W
Case: SOT323
Mounting: SMD
Collector-emitter voltage: 12V
Frequency: 8GHz
Kind of transistor: RF
Kind of package: reel; tape
Collector current: 20mA
на замовлення 1840 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
46+ | 9.38 грн |
53+ | 7.60 грн |
67+ | 5.92 грн |
76+ | 5.23 грн |
100+ | 4.66 грн |
220+ | 4.24 грн |
250+ | 4.15 грн |
500+ | 4.11 грн |
605+ | 4.01 грн |
SPD04N80C3ATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.5A; Idm: 12A; 63W
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.5A
Pulsed drain current: 12A
Power dissipation: 63W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 1.3Ω
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.5A; Idm: 12A; 63W
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.5A
Pulsed drain current: 12A
Power dissipation: 63W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 1.3Ω
Mounting: SMD
Kind of channel: enhancement
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SPP04N80C3 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4A; 63W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4A
Power dissipation: 63W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 1.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4A; 63W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4A
Power dissipation: 63W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 1.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 367 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4+ | 108.46 грн |
10+ | 93.42 грн |
28+ | 88.67 грн |
250+ | 85.51 грн |
IRFB7530PBF |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 295A; 375W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 295A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: THT
Gate charge: 274nC
Kind of package: tube
Kind of channel: enhancement
Trade name: StrongIRFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 295A; 375W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 295A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: THT
Gate charge: 274nC
Kind of package: tube
Kind of channel: enhancement
Trade name: StrongIRFET
на замовлення 165 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 215.71 грн |
3+ | 189.22 грн |
10+ | 102.13 грн |
25+ | 96.59 грн |
IRFP7530PBF |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 281A; 341W; TO247AC
Technology: HEXFET®
Case: TO247AC
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: THT
Trade name: StrongIRFET
Drain-source voltage: 60V
Drain current: 281A
Gate charge: 274nC
On-state resistance: 2mΩ
Power dissipation: 341W
Gate-source voltage: ±20V
Polarisation: unipolar
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 281A; 341W; TO247AC
Technology: HEXFET®
Case: TO247AC
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: THT
Trade name: StrongIRFET
Drain-source voltage: 60V
Drain current: 281A
Gate charge: 274nC
On-state resistance: 2mΩ
Power dissipation: 341W
Gate-source voltage: ±20V
Polarisation: unipolar
Kind of package: tube
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BSS209PWH6327XTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.63A; 0.3W; PG-SOT-323
Type of transistor: P-MOSFET
Technology: OptiMOS™ P
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.63A
Power dissipation: 0.3W
Case: PG-SOT-323
Gate-source voltage: ±12V
On-state resistance: 0.55Ω
Mounting: SMD
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.63A; 0.3W; PG-SOT-323
Type of transistor: P-MOSFET
Technology: OptiMOS™ P
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.63A
Power dissipation: 0.3W
Case: PG-SOT-323
Gate-source voltage: ±12V
On-state resistance: 0.55Ω
Mounting: SMD
Kind of channel: enhancement
на замовлення 3649 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
39+ | 11.08 грн |
51+ | 7.84 грн |
69+ | 5.75 грн |
100+ | 5.04 грн |
253+ | 3.71 грн |
693+ | 3.50 грн |
1000+ | 3.47 грн |
3000+ | 3.36 грн |
BSP171PH6327XTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.9A; 1.8W; PG-SOT223
Case: PG-SOT223
Technology: SIPMOS™
Mounting: SMD
Drain-source voltage: -60V
Drain current: -1.9A
On-state resistance: 0.3Ω
Power dissipation: 1.8W
Gate-source voltage: ±20V
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: P-MOSFET
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.9A; 1.8W; PG-SOT223
Case: PG-SOT223
Technology: SIPMOS™
Mounting: SMD
Drain-source voltage: -60V
Drain current: -1.9A
On-state resistance: 0.3Ω
Power dissipation: 1.8W
Gate-source voltage: ±20V
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: P-MOSFET
на замовлення 822 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
6+ | 75.88 грн |
11+ | 36.10 грн |
47+ | 20.11 грн |
128+ | 19.00 грн |
IRFB7440PBF |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 208A; 208W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 208A
Power dissipation: 208W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: THT
Gate charge: 90nC
Kind of package: tube
Kind of channel: enhancement
Trade name: StrongIRFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 208A; 208W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 208A
Power dissipation: 208W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: THT
Gate charge: 90nC
Kind of package: tube
Kind of channel: enhancement
Trade name: StrongIRFET
на замовлення 925 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
6+ | 77.59 грн |
8+ | 53.84 грн |
21+ | 45.92 грн |
56+ | 43.54 грн |
IRFR4104TRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 119A; 140W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 119A
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 140W
Technology: HEXFET®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 119A; 140W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 119A
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 140W
Technology: HEXFET®
на замовлення 1175 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
6+ | 76.74 грн |
10+ | 50.67 грн |
BAT6402VH6327XTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SC79; SMD; 40V; 0.25A; 250mW
Mounting: SMD
Case: SC79
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Load current: 0.25A
Power dissipation: 0.25W
Max. forward impulse current: 0.8A
Max. off-state voltage: 40V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SC79; SMD; 40V; 0.25A; 250mW
Mounting: SMD
Case: SC79
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Load current: 0.25A
Power dissipation: 0.25W
Max. forward impulse current: 0.8A
Max. off-state voltage: 40V
на замовлення 10275 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
19+ | 23.02 грн |
29+ | 14.09 грн |
33+ | 12.19 грн |
100+ | 7.74 грн |
199+ | 4.68 грн |
547+ | 4.43 грн |
6000+ | 4.26 грн |
TLE4906KHTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Hall Sensors
Description: Sensor: Hall; unipolar; SC59; 5÷13.5mT; Usup: 2.7÷18VDC; SMT
Type of sensor: Hall
Case: SC59
Range of detectable magnetic field: 5...13.5mT
Supply voltage: 2.7...18V DC
Operating temperature: -40...150°C
Mounting: SMT
Kind of sensor: unipolar
Category: Hall Sensors
Description: Sensor: Hall; unipolar; SC59; 5÷13.5mT; Usup: 2.7÷18VDC; SMT
Type of sensor: Hall
Case: SC59
Range of detectable magnetic field: 5...13.5mT
Supply voltage: 2.7...18V DC
Operating temperature: -40...150°C
Mounting: SMT
Kind of sensor: unipolar
на замовлення 891 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
8+ | 57.13 грн |
9+ | 47.98 грн |
10+ | 45.84 грн |
32+ | 29.93 грн |
50+ | 29.85 грн |
86+ | 28.26 грн |
TLE4935L |
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Виробник: INFINEON TECHNOLOGIES
Category: Hall Sensors
Description: Sensor: Hall; latch; P-SSO-3-2; -20÷20mT; Usup: 3.8÷24VDC; THT
Type of sensor: Hall
Case: P-SSO-3-2
Range of detectable magnetic field: -20...20mT
Supply voltage: 3.8...24V DC
Operating temperature: -40...150°C
Mounting: THT
Kind of sensor: latch
Category: Hall Sensors
Description: Sensor: Hall; latch; P-SSO-3-2; -20÷20mT; Usup: 3.8÷24VDC; THT
Type of sensor: Hall
Case: P-SSO-3-2
Range of detectable magnetic field: -20...20mT
Supply voltage: 3.8...24V DC
Operating temperature: -40...150°C
Mounting: THT
Kind of sensor: latch
на замовлення 366 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
5+ | 96.35 грн |
17+ | 55.42 грн |
47+ | 52.25 грн |
BSS816NWH6327XTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.4A; 0.5W; SOT323
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.4A
Power dissipation: 0.5W
Case: SOT323
Gate-source voltage: ±8V
On-state resistance: 0.24Ω
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.4A; 0.5W; SOT323
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.4A
Power dissipation: 0.5W
Case: SOT323
Gate-source voltage: ±8V
On-state resistance: 0.24Ω
Mounting: SMD
Kind of channel: enhancement
на замовлення 159 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
28+ | 15.35 грн |
43+ | 9.42 грн |
55+ | 7.24 грн |
100+ | 6.40 грн |
BAT1704WH6327XTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 4V; 0.13A; 150mW
Power dissipation: 0.15W
Case: SOT323
Mounting: SMD
Load current: 0.13A
Max. off-state voltage: 4V
Semiconductor structure: double series
Type of diode: Schottky switching
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 4V; 0.13A; 150mW
Power dissipation: 0.15W
Case: SOT323
Mounting: SMD
Load current: 0.13A
Max. off-state voltage: 4V
Semiconductor structure: double series
Type of diode: Schottky switching
на замовлення 142 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
13+ | 33.25 грн |
16+ | 25.33 грн |
19+ | 21.93 грн |
100+ | 12.59 грн |
129+ | 7.20 грн |
BFP405H6327XTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; SIEGET™; bipolar; RF; 4.5V; 25mA; 0.075W; SOT343
Kind of package: reel; tape
Polarisation: bipolar
Technology: SIEGET™
Type of transistor: NPN
Mounting: SMD
Case: SOT343
Kind of transistor: RF
Collector current: 25mA
Power dissipation: 75mW
Collector-emitter voltage: 4.5V
Current gain: 90...130
Frequency: 25GHz
Category: NPN SMD transistors
Description: Transistor: NPN; SIEGET™; bipolar; RF; 4.5V; 25mA; 0.075W; SOT343
Kind of package: reel; tape
Polarisation: bipolar
Technology: SIEGET™
Type of transistor: NPN
Mounting: SMD
Case: SOT343
Kind of transistor: RF
Collector current: 25mA
Power dissipation: 75mW
Collector-emitter voltage: 4.5V
Current gain: 90...130
Frequency: 25GHz
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IRFS4229TRLPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 45A; 330W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 45A
Power dissipation: 330W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 45A; 330W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 45A
Power dissipation: 330W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
IRFS4321TRLPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 83A; 330W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 83A
Power dissipation: 330W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 83A; 330W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 83A
Power dissipation: 330W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
на замовлення 433 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 223.39 грн |
10+ | 100.55 грн |
26+ | 95.01 грн |
PVT322PBF |
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Виробник: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state; DPST-NO; Icntrl: 2÷25mA; 500mA; 0÷250VAC; 10Ω
Type of relay: solid state
Contacts configuration: DPST-NO
Control current: 2...25mA
Max. operating current: 0.5A
Switched voltage: 0...250V AC; 0...250V DC
Manufacturer series: PVT322PbF
Relay variant: MOSFET
On-state resistance: 10Ω
Mounting: THT
Case: DIP8
Operate time: 3ms
Release time: 0.5ms
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; DPST-NO; Icntrl: 2÷25mA; 500mA; 0÷250VAC; 10Ω
Type of relay: solid state
Contacts configuration: DPST-NO
Control current: 2...25mA
Max. operating current: 0.5A
Switched voltage: 0...250V AC; 0...250V DC
Manufacturer series: PVT322PbF
Relay variant: MOSFET
On-state resistance: 10Ω
Mounting: THT
Case: DIP8
Operate time: 3ms
Release time: 0.5ms
Operating temperature: -40...85°C
товару немає в наявності
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од. на суму грн.
IRFHM830TRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21A; 2.7W; PQFN3.3X3.3
Mounting: SMD
Case: PQFN3.3X3.3
Kind of package: reel
Polarisation: unipolar
Type of transistor: N-MOSFET
Power dissipation: 2.7W
Drain-source voltage: 30V
Drain current: 21A
Technology: HEXFET®
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21A; 2.7W; PQFN3.3X3.3
Mounting: SMD
Case: PQFN3.3X3.3
Kind of package: reel
Polarisation: unipolar
Type of transistor: N-MOSFET
Power dissipation: 2.7W
Drain-source voltage: 30V
Drain current: 21A
Technology: HEXFET®
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
BSS223PWH6327XTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.39A; 0.25W; PG-SOT-323
Type of transistor: P-MOSFET
Technology: OptiMOS™ P
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.39A
Power dissipation: 0.25W
Case: PG-SOT-323
Gate-source voltage: ±12V
On-state resistance: 1.2Ω
Mounting: SMD
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.39A; 0.25W; PG-SOT-323
Type of transistor: P-MOSFET
Technology: OptiMOS™ P
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.39A
Power dissipation: 0.25W
Case: PG-SOT-323
Gate-source voltage: ±12V
On-state resistance: 1.2Ω
Mounting: SMD
Kind of channel: enhancement
на замовлення 1265 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
28+ | 15.35 грн |
44+ | 9.10 грн |
68+ | 5.83 грн |
100+ | 4.81 грн |
226+ | 4.14 грн |
250+ | 3.78 грн |
500+ | 3.76 грн |
IRFS4310TRLPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 140A; 330W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 140A
Power dissipation: 330W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 140A; 330W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 140A
Power dissipation: 330W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
IRFS7437TRLPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 230W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 180A
Power dissipation: 230W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 230W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 180A
Power dissipation: 230W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Kind of channel: enhancement
на замовлення 640 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4+ | 135.57 грн |
8+ | 117.97 грн |
22+ | 111.63 грн |
BSC252N10NSFGATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 40A; 78W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 40A
Power dissipation: 78W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 25.2mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 40A; 78W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 40A
Power dissipation: 78W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 25.2mΩ
Mounting: SMD
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
IRLR6225TRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 100A; 63W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 100A
Power dissipation: 63W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 100A; 63W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 100A
Power dissipation: 63W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
на замовлення 1976 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
6+ | 75.03 грн |
10+ | 46.95 грн |
28+ | 33.73 грн |
76+ | 31.91 грн |
500+ | 30.72 грн |
IRF7410TRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -16A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -16A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -16A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -16A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
IRFB7446PBF |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 123A; 99W; TO220AB
Polarisation: unipolar
Case: TO220AB
Kind of channel: enhancement
Technology: HEXFET®
Type of transistor: N-MOSFET
Mounting: THT
Trade name: StrongIRFET
Drain-source voltage: 40V
Drain current: 123A
Gate charge: 62nC
On-state resistance: 3.3mΩ
Power dissipation: 99W
Gate-source voltage: ±20V
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 123A; 99W; TO220AB
Polarisation: unipolar
Case: TO220AB
Kind of channel: enhancement
Technology: HEXFET®
Type of transistor: N-MOSFET
Mounting: THT
Trade name: StrongIRFET
Drain-source voltage: 40V
Drain current: 123A
Gate charge: 62nC
On-state resistance: 3.3mΩ
Power dissipation: 99W
Gate-source voltage: ±20V
Kind of package: tube
на замовлення 101 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
8+ | 57.13 грн |
10+ | 47.34 грн |
26+ | 37.05 грн |
70+ | 34.99 грн |
IRF7832TRPBF | ![]() |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 20A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 20A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 20A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 20A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
на замовлення 512 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
6+ | 72.47 грн |
10+ | 57.32 грн |
21+ | 45.92 грн |
56+ | 43.47 грн |
100+ | 43.23 грн |
250+ | 42.36 грн |
BSP135H6327XTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.12A; 1.8W; SOT223
Mounting: SMD
Polarisation: unipolar
Drain current: 0.12A
Power dissipation: 1.8W
Gate-source voltage: ±20V
On-state resistance: 60Ω
Drain-source voltage: 600V
Case: SOT223
Kind of channel: depletion
Type of transistor: N-MOSFET
Technology: SIPMOS™
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.12A; 1.8W; SOT223
Mounting: SMD
Polarisation: unipolar
Drain current: 0.12A
Power dissipation: 1.8W
Gate-source voltage: ±20V
On-state resistance: 60Ω
Drain-source voltage: 600V
Case: SOT223
Kind of channel: depletion
Type of transistor: N-MOSFET
Technology: SIPMOS™
на замовлення 1438 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
6+ | 82.70 грн |
10+ | 55.82 грн |
28+ | 33.96 грн |
76+ | 32.14 грн |
1000+ | 30.88 грн |
IAUZ40N08S5N100ATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 40A; Idm: 160A; 68W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 40A
Pulsed drain current: 160A
Power dissipation: 68W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 14.5mΩ
Mounting: SMD
Gate charge: 24.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 40A; Idm: 160A; 68W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 40A
Pulsed drain current: 160A
Power dissipation: 68W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 14.5mΩ
Mounting: SMD
Gate charge: 24.2nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
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IRS2101SPBF | ![]() |
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Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 230ns
Turn-off time: 185ns
Part status: Not recommended for new designs
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 230ns
Turn-off time: 185ns
Part status: Not recommended for new designs
на замовлення 172 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
6+ | 72.47 грн |
7+ | 59.38 грн |
10+ | 47.50 грн |
21+ | 45.92 грн |
57+ | 42.75 грн |
BAT1705WH6327XTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 4V; 0.13A; 150mW
Power dissipation: 0.15W
Case: SOT323
Mounting: SMD
Load current: 0.13A
Max. off-state voltage: 4V
Semiconductor structure: common cathode; double
Type of diode: Schottky switching
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 4V; 0.13A; 150mW
Power dissipation: 0.15W
Case: SOT323
Mounting: SMD
Load current: 0.13A
Max. off-state voltage: 4V
Semiconductor structure: common cathode; double
Type of diode: Schottky switching
на замовлення 653 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
84+ | 5.12 грн |
90+ | 4.43 грн |
IRLMS5703TRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.3A; 1.7W; TSOP6
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2.3A
Power dissipation: 1.7W
Case: TSOP6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.3A; 1.7W; TSOP6
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2.3A
Power dissipation: 1.7W
Case: TSOP6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
товару немає в наявності
В кошику
од. на суму грн.
IRS2168DSTRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; SO16; -260÷180mA; 1.4W; Ch: 2; 600V
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: ballast controller; gate driver; high-/low-side; PFC controller
Case: SO16
Output current: -260...180mA
Power: 1.4W
Number of channels: 2
Supply voltage: 11.5...16.6V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 0.12µs
Turn-off time: 50ns
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; SO16; -260÷180mA; 1.4W; Ch: 2; 600V
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: ballast controller; gate driver; high-/low-side; PFC controller
Case: SO16
Output current: -260...180mA
Power: 1.4W
Number of channels: 2
Supply voltage: 11.5...16.6V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 0.12µs
Turn-off time: 50ns
товару немає в наявності
В кошику
од. на суму грн.
BGSX22G2A10E6327XTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Analog multiplexers and switches
Description: IC: RF switch; DPDT; Ch: 2; ATSLP-10-2; 1.65÷3.4VDC; 0.1÷6GHz
Output configuration: DPDT
Application: telecommunication
Mounting: SMD
Type of integrated circuit: RF switch
Supply voltage: 1.65...3.4V DC
Number of channels: 2
Bandwidth: 0.1...6GHz
Case: ATSLP-10-2
Category: Analog multiplexers and switches
Description: IC: RF switch; DPDT; Ch: 2; ATSLP-10-2; 1.65÷3.4VDC; 0.1÷6GHz
Output configuration: DPDT
Application: telecommunication
Mounting: SMD
Type of integrated circuit: RF switch
Supply voltage: 1.65...3.4V DC
Number of channels: 2
Bandwidth: 0.1...6GHz
Case: ATSLP-10-2
на замовлення 61 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
8+ | 49.88 грн |
25+ | 47.50 грн |
BAT6405WH6327XTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT323; SMD; 40V; 0.25A; 250mW
Power dissipation: 0.25W
Case: SOT323
Mounting: SMD
Load current: 0.25A
Max. forward impulse current: 0.8A
Max. off-state voltage: 40V
Semiconductor structure: common cathode; double
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT323; SMD; 40V; 0.25A; 250mW
Power dissipation: 0.25W
Case: SOT323
Mounting: SMD
Load current: 0.25A
Max. forward impulse current: 0.8A
Max. off-state voltage: 40V
Semiconductor structure: common cathode; double
Type of diode: Schottky rectifying
на замовлення 2500 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
36+ | 11.94 грн |
45+ | 8.87 грн |
50+ | 8.08 грн |
100+ | 6.02 грн |
191+ | 4.91 грн |
525+ | 4.59 грн |
1000+ | 4.43 грн |