Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (149543) > Сторінка 2457 з 2493
Фото | Назва | Виробник | Інформація |
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IRS21094SPBF | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO14 Output current: -600...290mA Power: 1W Number of channels: 2 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V Turn-on time: 850ns Turn-off time: 235ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IRS2108PBF | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: DIP8 Output current: -600...290mA Power: 1W Number of channels: 2 Supply voltage: 10...20V DC Mounting: THT Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V Turn-on time: 320ns Turn-off time: 235ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IRS2108SPBF | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO8 Output current: -600...290mA Power: 625mW Number of channels: 2 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V Turn-on time: 320ns Turn-off time: 235ns |
на замовлення 66 шт: термін постачання 21-30 дні (днів) |
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IRFB3307ZPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 75V; 120A; 230W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 75V Drain current: 120A Power dissipation: 230W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 5.8mΩ Mounting: THT Gate charge: 79nC Kind of package: tube Kind of channel: enhancement Technology: HEXFET® |
на замовлення 87 шт: термін постачання 21-30 дні (днів) |
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IRFIZ44NPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 55V; 28A; 38W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 55V Drain current: 28A Power dissipation: 38W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 24mΩ Mounting: THT Gate charge: 43.3nC Kind of package: tube Kind of channel: enhancement Technology: HEXFET® |
на замовлення 186 шт: термін постачання 21-30 дні (днів) |
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IRFR120NTRPBF | INFINEON TECHNOLOGIES |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 100V; 9.1A; 39W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 9.1A Power dissipation: 39W Case: DPAK Mounting: SMD Kind of package: reel Kind of channel: enhancement |
на замовлення 1855 шт: термін постачання 21-30 дні (днів) |
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IRFR6215TRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -150V; -13A; 110W; DPAK Case: DPAK Kind of channel: enhancement Mounting: SMD Technology: HEXFET® Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -150V Drain current: -13A Power dissipation: 110W Kind of package: reel |
на замовлення 2085 шт: термін постачання 21-30 дні (днів) |
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IRFSL4410ZPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 97A; 230W; TO262 Case: TO262 Mounting: THT Kind of package: tube Polarisation: unipolar Drain current: 97A Drain-source voltage: 100V Power dissipation: 230W Kind of channel: enhancement Technology: HEXFET® Type of transistor: N-MOSFET |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BC856SH6327 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: PNP x2; bipolar; 65V; 0.1A; 0.25W; SOT363 Type of transistor: PNP x2 Polarisation: bipolar Collector-emitter voltage: 65V Collector current: 0.1A Power dissipation: 0.25W Case: SOT363 Mounting: SMD Frequency: 250MHz |
на замовлення 1434 шт: термін постачання 21-30 дні (днів) |
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BSS139H6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 250V; 0.1A; 0.36W; SOT23 Type of transistor: N-MOSFET Technology: SIPMOS™ Polarisation: unipolar Drain-source voltage: 250V Drain current: 0.1A Power dissipation: 0.36W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 30Ω Mounting: SMD Kind of channel: depletion |
на замовлення 7469 шт: термін постачання 21-30 дні (днів) |
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BSP170PH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -60V; -1.9A; 1.8W; PG-SOT223 Case: PG-SOT223 Technology: SIPMOS™ Mounting: SMD Drain-source voltage: -60V Drain current: -1.9A On-state resistance: 0.3Ω Power dissipation: 1.8W Gate-source voltage: ±20V Polarisation: unipolar Kind of channel: enhancement Type of transistor: P-MOSFET |
на замовлення 67 шт: термін постачання 21-30 дні (днів) |
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IRS21864SPBF | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO14 Output current: -4...4A Power: 1W Number of channels: 2 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V Turn-on time: 192ns Turn-off time: 188ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IGW25T120FKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 1.2kV; 25A; 190W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 25A Power dissipation: 190W Case: TO247-3 Gate-emitter voltage: ±20V Mounting: THT Kind of package: tube |
на замовлення 21 шт: термін постачання 21-30 дні (днів) |
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IRL7833STRLPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 150A; 140W; D2PAK Kind of package: reel Case: D2PAK Kind of channel: enhancement Technology: HEXFET® Features of semiconductor devices: logic level Type of transistor: N-MOSFET Mounting: SMD Polarisation: unipolar Drain-source voltage: 30V Power dissipation: 140W Drain current: 150A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IPA037N08N3GXKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 80V; 75A; 41W; TO220FP Mounting: THT Type of transistor: N-MOSFET Kind of package: tube Polarisation: unipolar On-state resistance: 3.7mΩ Gate-source voltage: ±20V Power dissipation: 41W Drain-source voltage: 80V Drain current: 75A Case: TO220FP Kind of channel: enhancement Technology: OptiMOS™ 3 |
на замовлення 18 шт: термін постачання 21-30 дні (днів) |
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IPD90N04S405ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 40V; 61A; Idm: 344A Technology: OptiMOS™ T2 Gate-source voltage: ±20V Drain-source voltage: 40V Drain current: 61A Power dissipation: 65W Pulsed drain current: 344A Case: PG-TO252-3-313 Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: reel Mounting: SMD Polarisation: unipolar Gate charge: 18nC On-state resistance: 5.2mΩ |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IPD068P03L3GATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -70A; 100W; PG-TO252-3 Technology: OptiMOS™ P3 Polarisation: unipolar Type of transistor: P-MOSFET Mounting: SMD Drain current: -70A Drain-source voltage: -30V On-state resistance: 11mΩ Kind of channel: enhancement Case: PG-TO252-3 Gate-source voltage: ±20V Power dissipation: 100W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IPB065N15N3GATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 150V; 130A; 300W; PG-TO263-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Mounting: SMD Polarisation: unipolar On-state resistance: 6.5mΩ Gate-source voltage: ±20V Drain current: 130A Drain-source voltage: 150V Power dissipation: 300W Case: PG-TO263-3 Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TLE7181EMXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; H-bridge,push-pull; MOSFET gate driver; SSOP24; Ch: 4 Type of integrated circuit: driver Kind of integrated circuit: MOSFET gate driver Number of channels: 4 Kind of output: non-inverting Mounting: SMD Case: SSOP24 Operating temperature: -40...150°C Turn-off time: 200ns Turn-on time: 250ns Topology: H-bridge; push-pull Supply voltage: 7...34V DC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TLE7182EMXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; H-bridge,push-pull; MOSFET gate driver; SSOP24; Ch: 4 Type of integrated circuit: driver Kind of integrated circuit: MOSFET gate driver Number of channels: 4 Mounting: SMD Case: SSOP24 Operating temperature: -40...150°C Turn-off time: 200ns Turn-on time: 250ns Topology: H-bridge; push-pull Supply voltage: 7...34V DC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
IPB160N04S4LH1ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 40V; 160A; Idm: 640A Type of transistor: N-MOSFET Technology: OptiMOS™ T2 Polarisation: unipolar Drain-source voltage: 40V Drain current: 160A Pulsed drain current: 640A Power dissipation: 167W Case: PG-TO263-7-3 Gate-source voltage: -16...20V On-state resistance: 1.5mΩ Mounting: SMD Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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SPA07N60C3 | INFINEON TECHNOLOGIES |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 600V; 7A; 32W; PG-TO220-3-FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 7A Power dissipation: 32W Case: PG-TO220-3-FP Gate-source voltage: ±20V On-state resistance: 0.6Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Technology: CoolMOS™ |
на замовлення 83 шт: термін постачання 21-30 дні (днів) |
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SPP07N60C3 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 4.6A; 83W; PG-TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 4.6A Power dissipation: 83W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 0.6Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Technology: CoolMOS™ |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IPB025N10N3GATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 300W; PG-TO263-7 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 100V Drain current: 180A Power dissipation: 300W Case: PG-TO263-7 Gate-source voltage: ±20V On-state resistance: 2.5mΩ Mounting: SMD Kind of channel: enhancement |
на замовлення 376 шт: термін постачання 21-30 дні (днів) |
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IMW65R107M1HXKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 13A; Idm: 48A; 75W; TO247 Mounting: THT Case: TO247 Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar Gate-source voltage: -5...23V On-state resistance: 139mΩ Drain current: 13A Pulsed drain current: 48A Power dissipation: 75W Drain-source voltage: 650V Kind of package: tube Technology: CoolSiC™; SiC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
IMZA65R107M1HXKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 13A; Idm: 48A; 75W Mounting: THT Case: TO247-4 Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Type of transistor: N-MOSFET Polarisation: unipolar Gate-source voltage: -5...23V On-state resistance: 139mΩ Drain current: 13A Pulsed drain current: 48A Power dissipation: 75W Drain-source voltage: 650V Kind of package: tube Technology: CoolSiC™; SiC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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IPP020N06NAKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 136W; PG-TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 100A Power dissipation: 136W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 2mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Technology: OptiMOS™ |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IPB014N06NATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 180A; 214W; PG-TO263-7 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 180A Power dissipation: 214W Case: PG-TO263-7 Gate-source voltage: ±20V On-state resistance: 1.4mΩ Mounting: SMD Kind of channel: enhancement Technology: OptiMOS™ |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IPB034N06L3GATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 90A; 167W; PG-TO263-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 90A Power dissipation: 167W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 3.4mΩ Mounting: SMD Kind of channel: enhancement Technology: OptiMOS™ 3 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BTS452T | INFINEON TECHNOLOGIES |
![]() Description: IC: power switch; high-side; 1.8A; Ch: 1; N-Channel; SMD; TO252-5 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 1.8A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: TO252-5 On-state resistance: 0.15Ω Supply voltage: 6...52V DC Technology: Classic PROFET |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IRLR8256TRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 25V; 81A; 63W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 25V Drain current: 81A Power dissipation: 63W Case: DPAK Mounting: SMD Kind of package: reel Kind of channel: enhancement Features of semiconductor devices: logic level |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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AIGW40N65F5XKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 650V; 46A; 125W; TO247-3; F5 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 46A Power dissipation: 125W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 120A Mounting: THT Gate charge: 95nC Kind of package: tube Turn-on time: 30ns Turn-off time: 178ns Technology: TRENCHSTOP™ 5 Manufacturer series: F5 |
на замовлення 177 шт: термін постачання 21-30 дні (днів) |
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AIGW40N65H5XKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 650V; 46A; 125W; TO247-3; H5 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 46A Power dissipation: 125W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 120A Mounting: THT Gate charge: 92nC Kind of package: tube Turn-on time: 31ns Turn-off time: 160ns Technology: TRENCHSTOP™ 5 Manufacturer series: H5 |
на замовлення 167 шт: термін постачання 21-30 дні (днів) |
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AIKW40N65DF5XKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 650V; 46A; 125W; TO247-3; F5 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 46A Power dissipation: 125W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 120A Mounting: THT Gate charge: 95nC Kind of package: tube Turn-on time: 30ns Turn-off time: 178ns Features of semiconductor devices: integrated anti-parallel diode Technology: TRENCHSTOP™ 5 Manufacturer series: F5 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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AIKW40N65DH5XKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 650V; 46A; 125W; TO247-3; H5 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 46A Power dissipation: 125W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 120A Mounting: THT Gate charge: 92nC Kind of package: tube Turn-on time: 31ns Turn-off time: 164ns Features of semiconductor devices: integrated anti-parallel diode Technology: TRENCHSTOP™ 5 Manufacturer series: H5 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IRFH5010TRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 13A; 250W; PQFN5X6 Type of transistor: N-MOSFET Technology: HEXFET® Case: PQFN5X6 Kind of channel: enhancement Kind of package: reel Mounting: SMD Polarisation: unipolar Drain current: 13A Drain-source voltage: 100V Power dissipation: 250W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IRFH5015TRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 150V; 10A; 250W; PQFN5X6 Type of transistor: N-MOSFET Technology: HEXFET® Case: PQFN5X6 Kind of channel: enhancement Kind of package: reel Mounting: SMD Polarisation: unipolar Drain current: 10A Drain-source voltage: 150V Power dissipation: 250W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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AIKW50N65DH5XKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 650V; 53.5A; 136W; TO247-3; H5 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 53.5A Power dissipation: 136W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 150A Mounting: THT Gate charge: 116nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Turn-on time: 22ns Turn-off time: 256ns Technology: TRENCHSTOP™ 5 Manufacturer series: H5 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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AIKW50N65DF5XKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 650V; 53.5A; 136W; TO247-3; F5 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 53.5A Power dissipation: 136W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 150A Mounting: THT Gate charge: 108nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Turn-on time: 33ns Turn-off time: 162ns Technology: TRENCHSTOP™ 5 Manufacturer series: F5 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BTS4141N | INFINEON TECHNOLOGIES |
![]() ![]() Description: IC: power switch; high-side; 700mA; Ch: 1; N-Channel; SMD Kind of integrated circuit: high-side Technology: Classic PROFET Mounting: SMD On-state resistance: 0.175Ω Output current: 0.7A Number of channels: 1 Output voltage: 12...45V Kind of output: N-Channel Case: PG-SOT223-4 Type of integrated circuit: power switch |
на замовлення 3144 шт: термін постачання 21-30 дні (днів) |
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IRG4BC40W-STRRP | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 600V; 40A; 160W; D2PAK Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 40A Power dissipation: 160W Case: D2PAK Mounting: SMD Kind of package: reel |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IRL530NSTRLPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 17A; 3.8W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 17A Power dissipation: 3.8W Case: D2PAK Gate-source voltage: ±20V Mounting: SMD Kind of channel: enhancement Features of semiconductor devices: logic level Technology: HEXFET® |
на замовлення 4007 шт: термін постачання 21-30 дні (днів) |
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IRFR1205TRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 55V; 37A; 107W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 55V Drain current: 37A Case: DPAK Mounting: SMD Kind of package: reel Kind of channel: enhancement Power dissipation: 107W Technology: HEXFET® |
на замовлення 265 шт: термін постачання 21-30 дні (днів) |
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IRFSL7437PBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 180A; Idm: 1kA; 230W; TO262 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 180A Pulsed drain current: 1kA Power dissipation: 230W Case: TO262 Gate-source voltage: ±20V On-state resistance: 1.8mΩ Mounting: THT Gate charge: 225nC Kind of package: tube Kind of channel: enhancement |
на замовлення 46 шт: термін постачання 21-30 дні (днів) |
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AIGW50N65F5XKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 650V; 53.5A; 136W; TO247-3; F5 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 53.5A Power dissipation: 136W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 150A Mounting: THT Gate charge: 108nC Kind of package: tube Turn-on time: 33ns Turn-off time: 162ns Technology: TRENCHSTOP™ 5 Manufacturer series: F5 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SPP21N50C3 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 560V; 13.1A; 208W; PG-TO220-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 560V Drain current: 13.1A Power dissipation: 208W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 0.19Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
на замовлення 110 шт: термін постачання 21-30 дні (днів) |
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BTS428L2 | INFINEON TECHNOLOGIES |
![]() Description: IC: power switch; high-side; 5.8A; Ch: 1; N-Channel; SMD; TO252 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 5.8A Number of channels: 1 Mounting: SMD Case: TO252 On-state resistance: 50mΩ Output voltage: 4.75...41V Technology: Classic PROFET; SIPMOS™ Kind of output: N-Channel |
на замовлення 2299 шт: термін постачання 21-30 дні (днів) |
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BTS4300SGA | INFINEON TECHNOLOGIES |
![]() Description: IC: power switch; high-side; 400mA; Ch: 1; N-Channel; SMD; SO8 Type of integrated circuit: power switch Case: SO8 Mounting: SMD Number of channels: 1 Supply voltage: 5...34V DC Kind of integrated circuit: high-side Technology: Classic PROFET On-state resistance: 0.3Ω Output current: 0.4A Kind of output: N-Channel |
на замовлення 1949 шт: термін постачання 21-30 дні (днів) |
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BTS441TG | INFINEON TECHNOLOGIES |
![]() Description: IC: power switch; high-side; 17A; Ch: 1; N-Channel; SMD; TO263-5 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 17A Number of channels: 1 Mounting: SMD Case: TO263-5 On-state resistance: 15mΩ Output voltage: 4.75...43V Technology: Classic PROFET Kind of output: N-Channel |
на замовлення 717 шт: термін постачання 21-30 дні (днів) |
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BTS4880R | INFINEON TECHNOLOGIES |
![]() Description: IC: power switch; high-side; 625mA; Ch: 1; N-Channel; SMD; BSSOP36 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 0.625A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: BSSOP36 On-state resistance: 0.15Ω Supply voltage: 11...45V DC Technology: Classic PROFET |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IRFB3207ZGPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 75V; 120A; 300W; TO220AB Kind of channel: enhancement Technology: HEXFET® Type of transistor: N-MOSFET Mounting: THT Case: TO220AB Kind of package: tube Polarisation: unipolar Gate charge: 0.12µC On-state resistance: 4.1mΩ Gate-source voltage: ±20V Drain-source voltage: 75V Drain current: 120A Power dissipation: 300W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IRFB3207ZPBF | INFINEON TECHNOLOGIES |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 75V; 120A; 300W; TO220AB Power dissipation: 300W Kind of package: tube Case: TO220AB Mounting: THT Kind of channel: enhancement Technology: HEXFET® Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 0.12µC On-state resistance: 4.1mΩ Gate-source voltage: ±20V Drain-source voltage: 75V Drain current: 120A |
на замовлення 14 шт: термін постачання 21-30 дні (днів) |
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IRFB4019PBF | INFINEON TECHNOLOGIES |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 150V; 17A; 80W; TO220AB Case: TO220AB Mounting: THT Kind of package: tube Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 13nC On-state resistance: 95mΩ Drain current: 17A Gate-source voltage: ±20V Power dissipation: 80W Drain-source voltage: 150V Kind of channel: enhancement Technology: HEXFET® |
на замовлення 200 шт: термін постачання 21-30 дні (днів) |
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BSS138WH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 0.28A; 0.5W; SOT323 Type of transistor: N-MOSFET Technology: SIPMOS™ Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.28A Power dissipation: 0.5W Case: SOT323 Gate-source voltage: ±20V On-state resistance: 3.5Ω Mounting: SMD Kind of channel: enhancement |
на замовлення 2223 шт: термін постачання 21-30 дні (днів) |
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BSS138WH6433XTMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; SIPMOS®; unipolar; 60V; 220mA; Idm: 1.12A Kind of channel: enhancement Technology: SIPMOS® Polarisation: unipolar Type of transistor: N-MOSFET Case: SOT323 Mounting: SMD Drain current: 0.22A Power dissipation: 0.5W Pulsed drain current: 1.12A On-state resistance: 3.5Ω Gate-source voltage: ±20V Drain-source voltage: 60V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IRFB4020PBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 200V; 18A; 100W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 18A Case: TO220AB Mounting: THT Kind of package: tube Kind of channel: enhancement On-state resistance: 0.1Ω Gate charge: 18nC Gate-source voltage: ±20V Power dissipation: 100W Technology: HEXFET® |
на замовлення 866 шт: термін постачання 21-30 дні (днів) |
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IRFS7530TRL7PP | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 240A; 375W; D2PAK-7 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 240A Power dissipation: 375W Case: D2PAK-7 Gate-source voltage: ±20V On-state resistance: 1.4mΩ Mounting: SMD Gate charge: 236nC Kind of channel: enhancement Trade name: StrongIRFET |
на замовлення 476 шт: термін постачання 21-30 дні (днів) |
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IRS2184PBF | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: DIP8 Output current: -2.3...1.9A Power: 1W Number of channels: 2 Supply voltage: 10...20V DC Mounting: THT Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V Turn-on time: 720ns Turn-off time: 290ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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AIKW75N60CTXKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 600V; 75A; 428W; TO247-3 Type of transistor: IGBT Technology: TRENCHSTOP™ Power dissipation: 428W Case: TO247-3 Mounting: THT Gate charge: 470nC Kind of package: tube Pulsed collector current: 225A Collector-emitter voltage: 600V Features of semiconductor devices: integrated anti-parallel diode Turn-on time: 69ns Turn-off time: 365ns Gate-emitter voltage: ±20V Collector current: 75A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IRFB4510PBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 62A; 140W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 62A Power dissipation: 140W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 13.5mΩ Mounting: THT Gate charge: 58nC Kind of package: tube Kind of channel: enhancement |
на замовлення 240 шт: термін постачання 21-30 дні (днів) |
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IRS21094SPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -600...290mA
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 850ns
Turn-off time: 235ns
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -600...290mA
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 850ns
Turn-off time: 235ns
товару немає в наявності
В кошику
од. на суму грн.
IRS2108PBF |
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Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Output current: -600...290mA
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 320ns
Turn-off time: 235ns
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Output current: -600...290mA
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 320ns
Turn-off time: 235ns
товару немає в наявності
В кошику
од. на суму грн.
IRS2108SPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 320ns
Turn-off time: 235ns
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 320ns
Turn-off time: 235ns
на замовлення 66 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4+ | 133.01 грн |
IRFB3307ZPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 120A; 230W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 120A
Power dissipation: 230W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 5.8mΩ
Mounting: THT
Gate charge: 79nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 120A; 230W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 120A
Power dissipation: 230W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 5.8mΩ
Mounting: THT
Gate charge: 79nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
на замовлення 87 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3+ | 147.26 грн |
10+ | 118.76 грн |
12+ | 80.75 грн |
32+ | 76.00 грн |
IRFIZ44NPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 28A; 38W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 28A
Power dissipation: 38W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 43.3nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 28A; 38W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 28A
Power dissipation: 38W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 43.3nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
на замовлення 186 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4+ | 121.92 грн |
10+ | 98.65 грн |
23+ | 41.33 грн |
62+ | 39.11 грн |
IRFR120NTRPBF | ![]() |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 9.1A; 39W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 9.1A
Power dissipation: 39W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 9.1A; 39W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 9.1A
Power dissipation: 39W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
на замовлення 1855 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
7+ | 70.77 грн |
12+ | 34.12 грн |
50+ | 29.53 грн |
74+ | 12.59 грн |
204+ | 11.88 грн |
IRFR6215TRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -13A; 110W; DPAK
Case: DPAK
Kind of channel: enhancement
Mounting: SMD
Technology: HEXFET®
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -13A
Power dissipation: 110W
Kind of package: reel
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -13A; 110W; DPAK
Case: DPAK
Kind of channel: enhancement
Mounting: SMD
Technology: HEXFET®
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -13A
Power dissipation: 110W
Kind of package: reel
на замовлення 2085 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
5+ | 104.87 грн |
10+ | 78.14 грн |
25+ | 67.30 грн |
30+ | 31.11 грн |
83+ | 29.45 грн |
IRFSL4410ZPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 97A; 230W; TO262
Case: TO262
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Drain current: 97A
Drain-source voltage: 100V
Power dissipation: 230W
Kind of channel: enhancement
Technology: HEXFET®
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 97A; 230W; TO262
Case: TO262
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Drain current: 97A
Drain-source voltage: 100V
Power dissipation: 230W
Kind of channel: enhancement
Technology: HEXFET®
Type of transistor: N-MOSFET
товару немає в наявності
В кошику
од. на суму грн.
BC856SH6327 |
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Виробник: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 65V; 0.1A; 0.25W; SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT363
Mounting: SMD
Frequency: 250MHz
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 65V; 0.1A; 0.25W; SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT363
Mounting: SMD
Frequency: 250MHz
на замовлення 1434 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
25+ | 17.05 грн |
34+ | 11.72 грн |
100+ | 7.68 грн |
206+ | 4.54 грн |
565+ | 4.30 грн |
BSS139H6327XTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 0.1A; 0.36W; SOT23
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 0.1A
Power dissipation: 0.36W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 30Ω
Mounting: SMD
Kind of channel: depletion
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 0.1A; 0.36W; SOT23
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 0.1A
Power dissipation: 0.36W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 30Ω
Mounting: SMD
Kind of channel: depletion
на замовлення 7469 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
14+ | 31.55 грн |
22+ | 18.76 грн |
89+ | 10.45 грн |
245+ | 9.90 грн |
500+ | 9.74 грн |
1000+ | 9.50 грн |
BSP170PH6327XTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.9A; 1.8W; PG-SOT223
Case: PG-SOT223
Technology: SIPMOS™
Mounting: SMD
Drain-source voltage: -60V
Drain current: -1.9A
On-state resistance: 0.3Ω
Power dissipation: 1.8W
Gate-source voltage: ±20V
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: P-MOSFET
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.9A; 1.8W; PG-SOT223
Case: PG-SOT223
Technology: SIPMOS™
Mounting: SMD
Drain-source voltage: -60V
Drain current: -1.9A
On-state resistance: 0.3Ω
Power dissipation: 1.8W
Gate-source voltage: ±20V
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: P-MOSFET
на замовлення 67 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
6+ | 73.32 грн |
10+ | 45.60 грн |
50+ | 33.57 грн |
56+ | 16.86 грн |
IRS21864SPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -4...4A
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 192ns
Turn-off time: 188ns
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -4...4A
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 192ns
Turn-off time: 188ns
товару немає в наявності
В кошику
од. на суму грн.
IGW25T120FKSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 25A; 190W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 25A
Power dissipation: 190W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 25A; 190W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 25A
Power dissipation: 190W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
на замовлення 21 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 275.40 грн |
5+ | 196.35 грн |
14+ | 185.26 грн |
IRL7833STRLPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 150A; 140W; D2PAK
Kind of package: reel
Case: D2PAK
Kind of channel: enhancement
Technology: HEXFET®
Features of semiconductor devices: logic level
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 30V
Power dissipation: 140W
Drain current: 150A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 150A; 140W; D2PAK
Kind of package: reel
Case: D2PAK
Kind of channel: enhancement
Technology: HEXFET®
Features of semiconductor devices: logic level
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 30V
Power dissipation: 140W
Drain current: 150A
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IPA037N08N3GXKSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 75A; 41W; TO220FP
Mounting: THT
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
On-state resistance: 3.7mΩ
Gate-source voltage: ±20V
Power dissipation: 41W
Drain-source voltage: 80V
Drain current: 75A
Case: TO220FP
Kind of channel: enhancement
Technology: OptiMOS™ 3
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 75A; 41W; TO220FP
Mounting: THT
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
On-state resistance: 3.7mΩ
Gate-source voltage: ±20V
Power dissipation: 41W
Drain-source voltage: 80V
Drain current: 75A
Case: TO220FP
Kind of channel: enhancement
Technology: OptiMOS™ 3
на замовлення 18 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 260.90 грн |
3+ | 209.80 грн |
7+ | 148.84 грн |
18+ | 140.93 грн |
IPD90N04S405ATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 40V; 61A; Idm: 344A
Technology: OptiMOS™ T2
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 61A
Power dissipation: 65W
Pulsed drain current: 344A
Case: PG-TO252-3-313
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel
Mounting: SMD
Polarisation: unipolar
Gate charge: 18nC
On-state resistance: 5.2mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 40V; 61A; Idm: 344A
Technology: OptiMOS™ T2
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 61A
Power dissipation: 65W
Pulsed drain current: 344A
Case: PG-TO252-3-313
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel
Mounting: SMD
Polarisation: unipolar
Gate charge: 18nC
On-state resistance: 5.2mΩ
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IPD068P03L3GATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -70A; 100W; PG-TO252-3
Technology: OptiMOS™ P3
Polarisation: unipolar
Type of transistor: P-MOSFET
Mounting: SMD
Drain current: -70A
Drain-source voltage: -30V
On-state resistance: 11mΩ
Kind of channel: enhancement
Case: PG-TO252-3
Gate-source voltage: ±20V
Power dissipation: 100W
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -70A; 100W; PG-TO252-3
Technology: OptiMOS™ P3
Polarisation: unipolar
Type of transistor: P-MOSFET
Mounting: SMD
Drain current: -70A
Drain-source voltage: -30V
On-state resistance: 11mΩ
Kind of channel: enhancement
Case: PG-TO252-3
Gate-source voltage: ±20V
Power dissipation: 100W
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IPB065N15N3GATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 130A; 300W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Mounting: SMD
Polarisation: unipolar
On-state resistance: 6.5mΩ
Gate-source voltage: ±20V
Drain current: 130A
Drain-source voltage: 150V
Power dissipation: 300W
Case: PG-TO263-3
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 130A; 300W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Mounting: SMD
Polarisation: unipolar
On-state resistance: 6.5mΩ
Gate-source voltage: ±20V
Drain current: 130A
Drain-source voltage: 150V
Power dissipation: 300W
Case: PG-TO263-3
Kind of channel: enhancement
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TLE7181EMXUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; H-bridge,push-pull; MOSFET gate driver; SSOP24; Ch: 4
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Number of channels: 4
Kind of output: non-inverting
Mounting: SMD
Case: SSOP24
Operating temperature: -40...150°C
Turn-off time: 200ns
Turn-on time: 250ns
Topology: H-bridge; push-pull
Supply voltage: 7...34V DC
Category: MOSFET/IGBT drivers
Description: IC: driver; H-bridge,push-pull; MOSFET gate driver; SSOP24; Ch: 4
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Number of channels: 4
Kind of output: non-inverting
Mounting: SMD
Case: SSOP24
Operating temperature: -40...150°C
Turn-off time: 200ns
Turn-on time: 250ns
Topology: H-bridge; push-pull
Supply voltage: 7...34V DC
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TLE7182EMXUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; H-bridge,push-pull; MOSFET gate driver; SSOP24; Ch: 4
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Number of channels: 4
Mounting: SMD
Case: SSOP24
Operating temperature: -40...150°C
Turn-off time: 200ns
Turn-on time: 250ns
Topology: H-bridge; push-pull
Supply voltage: 7...34V DC
Category: MOSFET/IGBT drivers
Description: IC: driver; H-bridge,push-pull; MOSFET gate driver; SSOP24; Ch: 4
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Number of channels: 4
Mounting: SMD
Case: SSOP24
Operating temperature: -40...150°C
Turn-off time: 200ns
Turn-on time: 250ns
Topology: H-bridge; push-pull
Supply voltage: 7...34V DC
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IPB160N04S4LH1ATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 40V; 160A; Idm: 640A
Type of transistor: N-MOSFET
Technology: OptiMOS™ T2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 160A
Pulsed drain current: 640A
Power dissipation: 167W
Case: PG-TO263-7-3
Gate-source voltage: -16...20V
On-state resistance: 1.5mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 40V; 160A; Idm: 640A
Type of transistor: N-MOSFET
Technology: OptiMOS™ T2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 160A
Pulsed drain current: 640A
Power dissipation: 167W
Case: PG-TO263-7-3
Gate-source voltage: -16...20V
On-state resistance: 1.5mΩ
Mounting: SMD
Kind of channel: enhancement
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SPA07N60C3 | ![]() |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; 32W; PG-TO220-3-FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Power dissipation: 32W
Case: PG-TO220-3-FP
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: CoolMOS™
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; 32W; PG-TO220-3-FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Power dissipation: 32W
Case: PG-TO220-3-FP
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: CoolMOS™
на замовлення 83 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3+ | 212.30 грн |
10+ | 99.76 грн |
26+ | 94.21 грн |
SPP07N60C3 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 4.6A; 83W; PG-TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4.6A
Power dissipation: 83W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: CoolMOS™
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 4.6A; 83W; PG-TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4.6A
Power dissipation: 83W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: CoolMOS™
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IPB025N10N3GATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 300W; PG-TO263-7
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 300W
Case: PG-TO263-7
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 300W; PG-TO263-7
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 300W
Case: PG-TO263-7
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: SMD
Kind of channel: enhancement
на замовлення 376 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 395.61 грн |
3+ | 326.98 грн |
4+ | 247.81 грн |
11+ | 234.35 грн |
IMW65R107M1HXKSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 13A; Idm: 48A; 75W; TO247
Mounting: THT
Case: TO247
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: -5...23V
On-state resistance: 139mΩ
Drain current: 13A
Pulsed drain current: 48A
Power dissipation: 75W
Drain-source voltage: 650V
Kind of package: tube
Technology: CoolSiC™; SiC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 13A; Idm: 48A; 75W; TO247
Mounting: THT
Case: TO247
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: -5...23V
On-state resistance: 139mΩ
Drain current: 13A
Pulsed drain current: 48A
Power dissipation: 75W
Drain-source voltage: 650V
Kind of package: tube
Technology: CoolSiC™; SiC
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IMZA65R107M1HXKSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 13A; Idm: 48A; 75W
Mounting: THT
Case: TO247-4
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: -5...23V
On-state resistance: 139mΩ
Drain current: 13A
Pulsed drain current: 48A
Power dissipation: 75W
Drain-source voltage: 650V
Kind of package: tube
Technology: CoolSiC™; SiC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 13A; Idm: 48A; 75W
Mounting: THT
Case: TO247-4
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: -5...23V
On-state resistance: 139mΩ
Drain current: 13A
Pulsed drain current: 48A
Power dissipation: 75W
Drain-source voltage: 650V
Kind of package: tube
Technology: CoolSiC™; SiC
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IPP020N06NAKSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 136W; PG-TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 136W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: OptiMOS™
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 136W; PG-TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 136W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: OptiMOS™
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IPB014N06NATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 180A; 214W; PG-TO263-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 180A
Power dissipation: 214W
Case: PG-TO263-7
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 180A; 214W; PG-TO263-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 180A
Power dissipation: 214W
Case: PG-TO263-7
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™
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IPB034N06L3GATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 90A; 167W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 90A
Power dissipation: 167W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 3.4mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 90A; 167W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 90A
Power dissipation: 167W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 3.4mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
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BTS452T |
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Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.8A; Ch: 1; N-Channel; SMD; TO252-5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.8A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO252-5
On-state resistance: 0.15Ω
Supply voltage: 6...52V DC
Technology: Classic PROFET
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.8A; Ch: 1; N-Channel; SMD; TO252-5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.8A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO252-5
On-state resistance: 0.15Ω
Supply voltage: 6...52V DC
Technology: Classic PROFET
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IRLR8256TRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 81A; 63W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 81A
Power dissipation: 63W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 81A; 63W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 81A
Power dissipation: 63W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
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AIGW40N65F5XKSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 46A; 125W; TO247-3; F5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 46A
Power dissipation: 125W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 95nC
Kind of package: tube
Turn-on time: 30ns
Turn-off time: 178ns
Technology: TRENCHSTOP™ 5
Manufacturer series: F5
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 46A; 125W; TO247-3; F5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 46A
Power dissipation: 125W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 95nC
Kind of package: tube
Turn-on time: 30ns
Turn-off time: 178ns
Technology: TRENCHSTOP™ 5
Manufacturer series: F5
на замовлення 177 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 441.66 грн |
3+ | 409.32 грн |
AIGW40N65H5XKSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 46A; 125W; TO247-3; H5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 46A
Power dissipation: 125W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 92nC
Kind of package: tube
Turn-on time: 31ns
Turn-off time: 160ns
Technology: TRENCHSTOP™ 5
Manufacturer series: H5
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 46A; 125W; TO247-3; H5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 46A
Power dissipation: 125W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 92nC
Kind of package: tube
Turn-on time: 31ns
Turn-off time: 160ns
Technology: TRENCHSTOP™ 5
Manufacturer series: H5
на замовлення 167 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 555.91 грн |
3+ | 354.69 грн |
8+ | 335.69 грн |
AIKW40N65DF5XKSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 46A; 125W; TO247-3; F5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 46A
Power dissipation: 125W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 95nC
Kind of package: tube
Turn-on time: 30ns
Turn-off time: 178ns
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ 5
Manufacturer series: F5
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 46A; 125W; TO247-3; F5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 46A
Power dissipation: 125W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 95nC
Kind of package: tube
Turn-on time: 30ns
Turn-off time: 178ns
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ 5
Manufacturer series: F5
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AIKW40N65DH5XKSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 46A; 125W; TO247-3; H5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 46A
Power dissipation: 125W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 92nC
Kind of package: tube
Turn-on time: 31ns
Turn-off time: 164ns
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ 5
Manufacturer series: H5
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 46A; 125W; TO247-3; H5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 46A
Power dissipation: 125W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 92nC
Kind of package: tube
Turn-on time: 31ns
Turn-off time: 164ns
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ 5
Manufacturer series: H5
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IRFH5010TRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 13A; 250W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Case: PQFN5X6
Kind of channel: enhancement
Kind of package: reel
Mounting: SMD
Polarisation: unipolar
Drain current: 13A
Drain-source voltage: 100V
Power dissipation: 250W
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 13A; 250W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Case: PQFN5X6
Kind of channel: enhancement
Kind of package: reel
Mounting: SMD
Polarisation: unipolar
Drain current: 13A
Drain-source voltage: 100V
Power dissipation: 250W
товару немає в наявності
В кошику
од. на суму грн.
IRFH5015TRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 10A; 250W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Case: PQFN5X6
Kind of channel: enhancement
Kind of package: reel
Mounting: SMD
Polarisation: unipolar
Drain current: 10A
Drain-source voltage: 150V
Power dissipation: 250W
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 10A; 250W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Case: PQFN5X6
Kind of channel: enhancement
Kind of package: reel
Mounting: SMD
Polarisation: unipolar
Drain current: 10A
Drain-source voltage: 150V
Power dissipation: 250W
товару немає в наявності
В кошику
од. на суму грн.
AIKW50N65DH5XKSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 53.5A; 136W; TO247-3; H5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 53.5A
Power dissipation: 136W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 116nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 22ns
Turn-off time: 256ns
Technology: TRENCHSTOP™ 5
Manufacturer series: H5
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 53.5A; 136W; TO247-3; H5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 53.5A
Power dissipation: 136W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 116nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 22ns
Turn-off time: 256ns
Technology: TRENCHSTOP™ 5
Manufacturer series: H5
товару немає в наявності
В кошику
од. на суму грн.
AIKW50N65DF5XKSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 53.5A; 136W; TO247-3; F5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 53.5A
Power dissipation: 136W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 108nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 33ns
Turn-off time: 162ns
Technology: TRENCHSTOP™ 5
Manufacturer series: F5
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 53.5A; 136W; TO247-3; F5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 53.5A
Power dissipation: 136W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 108nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 33ns
Turn-off time: 162ns
Technology: TRENCHSTOP™ 5
Manufacturer series: F5
товару немає в наявності
В кошику
од. на суму грн.
BTS4141N | ![]() |
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Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 700mA; Ch: 1; N-Channel; SMD
Kind of integrated circuit: high-side
Technology: Classic PROFET
Mounting: SMD
On-state resistance: 0.175Ω
Output current: 0.7A
Number of channels: 1
Output voltage: 12...45V
Kind of output: N-Channel
Case: PG-SOT223-4
Type of integrated circuit: power switch
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 700mA; Ch: 1; N-Channel; SMD
Kind of integrated circuit: high-side
Technology: Classic PROFET
Mounting: SMD
On-state resistance: 0.175Ω
Output current: 0.7A
Number of channels: 1
Output voltage: 12...45V
Kind of output: N-Channel
Case: PG-SOT223-4
Type of integrated circuit: power switch
на замовлення 3144 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 252.37 грн |
10+ | 98.17 грн |
27+ | 92.63 грн |
1000+ | 91.84 грн |
2000+ | 89.46 грн |
IRG4BC40W-STRRP |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 160W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 40A
Power dissipation: 160W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 160W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 40A
Power dissipation: 160W
Case: D2PAK
Mounting: SMD
Kind of package: reel
товару немає в наявності
В кошику
од. на суму грн.
IRL530NSTRLPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 17A; 3.8W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 17A
Power dissipation: 3.8W
Case: D2PAK
Gate-source voltage: ±20V
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
Technology: HEXFET®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 17A; 3.8W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 17A
Power dissipation: 3.8W
Case: D2PAK
Gate-source voltage: ±20V
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
Technology: HEXFET®
на замовлення 4007 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4+ | 110.84 грн |
10+ | 71.02 грн |
30+ | 32.06 грн |
80+ | 30.32 грн |
2400+ | 29.14 грн |
IRFR1205TRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 37A; 107W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 37A
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 107W
Technology: HEXFET®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 37A; 107W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 37A
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 107W
Technology: HEXFET®
на замовлення 265 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
7+ | 66.50 грн |
10+ | 47.58 грн |
20+ | 44.73 грн |
29+ | 32.86 грн |
78+ | 31.04 грн |
IRFSL7437PBF |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; Idm: 1kA; 230W; TO262
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 180A
Pulsed drain current: 1kA
Power dissipation: 230W
Case: TO262
Gate-source voltage: ±20V
On-state resistance: 1.8mΩ
Mounting: THT
Gate charge: 225nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; Idm: 1kA; 230W; TO262
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 180A
Pulsed drain current: 1kA
Power dissipation: 230W
Case: TO262
Gate-source voltage: ±20V
On-state resistance: 1.8mΩ
Mounting: THT
Gate charge: 225nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 46 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3+ | 163.70 грн |
10+ | 75.21 грн |
14+ | 67.30 грн |
38+ | 64.13 грн |
AIGW50N65F5XKSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 53.5A; 136W; TO247-3; F5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 53.5A
Power dissipation: 136W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 108nC
Kind of package: tube
Turn-on time: 33ns
Turn-off time: 162ns
Technology: TRENCHSTOP™ 5
Manufacturer series: F5
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 53.5A; 136W; TO247-3; F5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 53.5A
Power dissipation: 136W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 108nC
Kind of package: tube
Turn-on time: 33ns
Turn-off time: 162ns
Technology: TRENCHSTOP™ 5
Manufacturer series: F5
товару немає в наявності
В кошику
од. на суму грн.
SPP21N50C3 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 560V; 13.1A; 208W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 560V
Drain current: 13.1A
Power dissipation: 208W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 560V; 13.1A; 208W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 560V
Drain current: 13.1A
Power dissipation: 208W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 110 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 234.47 грн |
3+ | 196.35 грн |
7+ | 151.22 грн |
17+ | 142.51 грн |
BTS428L2 |
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Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 5.8A; Ch: 1; N-Channel; SMD; TO252
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 5.8A
Number of channels: 1
Mounting: SMD
Case: TO252
On-state resistance: 50mΩ
Output voltage: 4.75...41V
Technology: Classic PROFET; SIPMOS™
Kind of output: N-Channel
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 5.8A; Ch: 1; N-Channel; SMD; TO252
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 5.8A
Number of channels: 1
Mounting: SMD
Case: TO252
On-state resistance: 50mΩ
Output voltage: 4.75...41V
Technology: Classic PROFET; SIPMOS™
Kind of output: N-Channel
на замовлення 2299 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 352.98 грн |
7+ | 150.43 грн |
17+ | 142.51 грн |
1000+ | 137.76 грн |
BTS4300SGA |
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Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 400mA; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Case: SO8
Mounting: SMD
Number of channels: 1
Supply voltage: 5...34V DC
Kind of integrated circuit: high-side
Technology: Classic PROFET
On-state resistance: 0.3Ω
Output current: 0.4A
Kind of output: N-Channel
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 400mA; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Case: SO8
Mounting: SMD
Number of channels: 1
Supply voltage: 5...34V DC
Kind of integrated circuit: high-side
Technology: Classic PROFET
On-state resistance: 0.3Ω
Output current: 0.4A
Kind of output: N-Channel
на замовлення 1949 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3+ | 170.52 грн |
10+ | 102.92 грн |
17+ | 55.42 грн |
47+ | 52.25 грн |
BTS441TG |
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Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 17A; Ch: 1; N-Channel; SMD; TO263-5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 17A
Number of channels: 1
Mounting: SMD
Case: TO263-5
On-state resistance: 15mΩ
Output voltage: 4.75...43V
Technology: Classic PROFET
Kind of output: N-Channel
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 17A; Ch: 1; N-Channel; SMD; TO263-5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 17A
Number of channels: 1
Mounting: SMD
Case: TO263-5
On-state resistance: 15mΩ
Output voltage: 4.75...43V
Technology: Classic PROFET
Kind of output: N-Channel
на замовлення 717 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 339.34 грн |
5+ | 216.93 грн |
12+ | 205.05 грн |
100+ | 200.30 грн |
250+ | 197.14 грн |
BTS4880R |
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Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 625mA; Ch: 1; N-Channel; SMD; BSSOP36
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.625A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: BSSOP36
On-state resistance: 0.15Ω
Supply voltage: 11...45V DC
Technology: Classic PROFET
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 625mA; Ch: 1; N-Channel; SMD; BSSOP36
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.625A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: BSSOP36
On-state resistance: 0.15Ω
Supply voltage: 11...45V DC
Technology: Classic PROFET
товару немає в наявності
В кошику
од. на суму грн.
IRFB3207ZGPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 120A; 300W; TO220AB
Kind of channel: enhancement
Technology: HEXFET®
Type of transistor: N-MOSFET
Mounting: THT
Case: TO220AB
Kind of package: tube
Polarisation: unipolar
Gate charge: 0.12µC
On-state resistance: 4.1mΩ
Gate-source voltage: ±20V
Drain-source voltage: 75V
Drain current: 120A
Power dissipation: 300W
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 120A; 300W; TO220AB
Kind of channel: enhancement
Technology: HEXFET®
Type of transistor: N-MOSFET
Mounting: THT
Case: TO220AB
Kind of package: tube
Polarisation: unipolar
Gate charge: 0.12µC
On-state resistance: 4.1mΩ
Gate-source voltage: ±20V
Drain-source voltage: 75V
Drain current: 120A
Power dissipation: 300W
товару немає в наявності
В кошику
од. на суму грн.
IRFB3207ZPBF | ![]() |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 120A; 300W; TO220AB
Power dissipation: 300W
Kind of package: tube
Case: TO220AB
Mounting: THT
Kind of channel: enhancement
Technology: HEXFET®
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 0.12µC
On-state resistance: 4.1mΩ
Gate-source voltage: ±20V
Drain-source voltage: 75V
Drain current: 120A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 120A; 300W; TO220AB
Power dissipation: 300W
Kind of package: tube
Case: TO220AB
Mounting: THT
Kind of channel: enhancement
Technology: HEXFET®
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 0.12µC
On-state resistance: 4.1mΩ
Gate-source voltage: ±20V
Drain-source voltage: 75V
Drain current: 120A
на замовлення 14 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 214.86 грн |
8+ | 131.42 грн |
IRFB4019PBF | ![]() |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 17A; 80W; TO220AB
Case: TO220AB
Mounting: THT
Kind of package: tube
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 13nC
On-state resistance: 95mΩ
Drain current: 17A
Gate-source voltage: ±20V
Power dissipation: 80W
Drain-source voltage: 150V
Kind of channel: enhancement
Technology: HEXFET®
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 17A; 80W; TO220AB
Case: TO220AB
Mounting: THT
Kind of package: tube
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 13nC
On-state resistance: 95mΩ
Drain current: 17A
Gate-source voltage: ±20V
Power dissipation: 80W
Drain-source voltage: 150V
Kind of channel: enhancement
Technology: HEXFET®
на замовлення 200 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4+ | 110.84 грн |
10+ | 94.29 грн |
25+ | 38.48 грн |
67+ | 36.42 грн |
BSS138WH6327XTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.28A; 0.5W; SOT323
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.28A
Power dissipation: 0.5W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 3.5Ω
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.28A; 0.5W; SOT323
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.28A
Power dissipation: 0.5W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 3.5Ω
Mounting: SMD
Kind of channel: enhancement
на замовлення 2223 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
39+ | 11.08 грн |
75+ | 5.30 грн |
85+ | 4.69 грн |
100+ | 4.42 грн |
250+ | 4.06 грн |
292+ | 3.20 грн |
802+ | 3.02 грн |
BSS138WH6433XTMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SIPMOS®; unipolar; 60V; 220mA; Idm: 1.12A
Kind of channel: enhancement
Technology: SIPMOS®
Polarisation: unipolar
Type of transistor: N-MOSFET
Case: SOT323
Mounting: SMD
Drain current: 0.22A
Power dissipation: 0.5W
Pulsed drain current: 1.12A
On-state resistance: 3.5Ω
Gate-source voltage: ±20V
Drain-source voltage: 60V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SIPMOS®; unipolar; 60V; 220mA; Idm: 1.12A
Kind of channel: enhancement
Technology: SIPMOS®
Polarisation: unipolar
Type of transistor: N-MOSFET
Case: SOT323
Mounting: SMD
Drain current: 0.22A
Power dissipation: 0.5W
Pulsed drain current: 1.12A
On-state resistance: 3.5Ω
Gate-source voltage: ±20V
Drain-source voltage: 60V
товару немає в наявності
В кошику
од. на суму грн.
IRFB4020PBF |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 18A; 100W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 18A
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 0.1Ω
Gate charge: 18nC
Gate-source voltage: ±20V
Power dissipation: 100W
Technology: HEXFET®
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 18A; 100W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 18A
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 0.1Ω
Gate charge: 18nC
Gate-source voltage: ±20V
Power dissipation: 100W
Technology: HEXFET®
на замовлення 866 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
5+ | 91.23 грн |
16+ | 60.96 грн |
42+ | 57.80 грн |
IRFS7530TRL7PP |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 240A; 375W; D2PAK-7
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 240A
Power dissipation: 375W
Case: D2PAK-7
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Gate charge: 236nC
Kind of channel: enhancement
Trade name: StrongIRFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 240A; 375W; D2PAK-7
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 240A
Power dissipation: 375W
Case: D2PAK-7
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Gate charge: 236nC
Kind of channel: enhancement
Trade name: StrongIRFET
на замовлення 476 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 233.62 грн |
8+ | 127.47 грн |
21+ | 120.34 грн |
IRS2184PBF |
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Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Output current: -2.3...1.9A
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 720ns
Turn-off time: 290ns
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Output current: -2.3...1.9A
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 720ns
Turn-off time: 290ns
товару немає в наявності
В кошику
од. на суму грн.
AIKW75N60CTXKSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 75A; 428W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 428W
Case: TO247-3
Mounting: THT
Gate charge: 470nC
Kind of package: tube
Pulsed collector current: 225A
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 69ns
Turn-off time: 365ns
Gate-emitter voltage: ±20V
Collector current: 75A
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 75A; 428W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 428W
Case: TO247-3
Mounting: THT
Gate charge: 470nC
Kind of package: tube
Pulsed collector current: 225A
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 69ns
Turn-off time: 365ns
Gate-emitter voltage: ±20V
Collector current: 75A
товару немає в наявності
В кошику
од. на суму грн.
IRFB4510PBF |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 62A; 140W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 62A
Power dissipation: 140W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 13.5mΩ
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 62A; 140W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 62A
Power dissipation: 140W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 13.5mΩ
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 240 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
6+ | 84.41 грн |
10+ | 68.88 грн |
22+ | 43.54 грн |
59+ | 41.17 грн |