Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (148832) > Сторінка 324 з 2481
| Фото | Назва | Виробник | Інформація |
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REFAUDIOAMA12040TOBO1 | Infineon Technologies |
Description: EVAL BOARD FOR MA12040Packaging: Bulk Output Type: 2-Channel (Stereo) Amplifier Type: Class D Voltage - Supply: 5V ~ 18V Max Output Power x Channels @ Load: 40W x 2 @ 4Ohm Board Type: Fully Populated Utilized IC / Part: MA12040 Supplied Contents: Board(s) Contents: Board(s) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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REFAUDIODMA12040PTOBO1 | Infineon Technologies |
Description: EVAL BOARD FOR MA12040PPackaging: Bulk Output Type: 2-Channel (Stereo) Amplifier Type: Class D Voltage - Supply: 5V ~ 18V Max Output Power x Channels @ Load: 40W x 2 @ 4Ohm Board Type: Fully Populated Utilized IC / Part: MA12040P Supplied Contents: Board(s) Contents: Board(s) |
на замовлення 3 шт: термін постачання 21-31 дні (днів) |
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IPB156N22NFDATMA1 | Infineon Technologies |
Description: MOSFET N-CH 220V 72A TO263-3Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 72A (Tc) Rds On (Max) @ Id, Vgs: 15.6mOhm @ 50A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 270µA Supplier Device Package: PG-TO263-3-2 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 220 V Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6930 pF @ 110 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 110 |
на замовлення 1012 шт: термін постачання 21-31 дні (днів) |
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IPT029N08N5ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 80V 52A/169A HSOF-8Packaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 52A (Ta), 169A (Tc) Rds On (Max) @ Id, Vgs: 2.9mOhm @ 150A, 10V Power Dissipation (Max): 168W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 108µA Supplier Device Package: PG-HSOF-8-1 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 40 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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KITLGPWRBOM004TOBO1 | Infineon Technologies |
Description: EVAL POWER BOARD 60VPackaging: Box Function: Half H-Bridge Driver (Internal FET) Type: Power Management Supplied Contents: Board(s) Part Status: Active |
на замовлення 6 шт: термін постачання 21-31 дні (днів) |
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KITLGPWRBOM005TOBO1 | Infineon Technologies |
Description: EVAL POWER BOARD 100V |
на замовлення 5 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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KITLGPWRBOM006TOBO1 | Infineon Technologies |
Description: EVAL POWER BOARD 150V |
на замовлення 5 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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KITLGPWRBOM008TOBO1 | Infineon Technologies |
Description: EVAL POWER BOARD 250V |
на замовлення 5 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
| SIPC10N65C3X1SA2 | Infineon Technologies |
Description: MOSFET Packaging: Bulk Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| SIPC10N65C3X1SA1 | Infineon Technologies |
Description: MOSFET Packaging: Bulk Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| FF1000R17IE4S4BOSA2 | Infineon Technologies |
Description: IGBT MOD 1700V 1390A AG-PRIME3-1 Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: 2 Independent Operating Temperature: -40°C ~ 150°C Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 1000A NTC Thermistor: Yes Supplier Device Package: AG-PRIME3-1 Current - Collector (Ic) (Max): 1390 A Voltage - Collector Emitter Breakdown (Max): 1700 V Power - Max: 6250 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 81 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| FM24C04B-G2TR | Infineon Technologies |
Description: IC FRAM 4KBIT I2C 1MHZ 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 4Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 4.5V ~ 5.5V Technology: FRAM (Ferroelectric RAM) Clock Frequency: 1 MHz Memory Format: FRAM Supplier Device Package: 8-SOIC Part Status: Obsolete Memory Interface: I²C Access Time: 550 ns Memory Organization: 512 x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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IMW120R220M1HXKSA1 | Infineon Technologies |
Description: SICFET N-CH 1.2KV 13A TO247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Rds On (Max) @ Id, Vgs: 286mOhm @ 4A, 18V Power Dissipation (Max): 75W (Tc) Vgs(th) (Max) @ Id: 5.7V @ 1.6mA Supplier Device Package: PG-TO247-3-41 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +23V, -7V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 289 pF @ 800 V |
на замовлення 560 шт: термін постачання 21-31 дні (днів) |
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IMW120R350M1HXKSA1 | Infineon Technologies |
Description: SICFET N-CH 1.2KV 4.7A TO247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc) Rds On (Max) @ Id, Vgs: 455mOhm @ 2A, 18V Power Dissipation (Max): 60W (Tc) Vgs(th) (Max) @ Id: 5.7V @ 1mA Supplier Device Package: PG-TO247-3-41 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +23V, -7V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 5.3 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 182 pF @ 800 V |
на замовлення 1143 шт: термін постачання 21-31 дні (днів) |
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IMZ120R140M1HXKSA1 | Infineon Technologies |
Description: SICFET N-CH 1.2KV 19A TO247-4Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Rds On (Max) @ Id, Vgs: 182mOhm @ 6A, 18V Power Dissipation (Max): 94W (Tc) Vgs(th) (Max) @ Id: 5.7V @ 2.5mA Supplier Device Package: PG-TO247-4-1 Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +23V, -7V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 454 pF @ 800 V |
на замовлення 15 шт: термін постачання 21-31 дні (днів) |
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IMZ120R220M1HXKSA1 | Infineon Technologies |
Description: SICFET N-CH 1.2KV 13A TO247-4Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Rds On (Max) @ Id, Vgs: 220mOhm @ 4A, 18V Power Dissipation (Max): 75W (Tc) Vgs(th) (Max) @ Id: 5.7V @ 1.6mA Supplier Device Package: PG-TO247-4-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +23V, -7V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 289 pF @ 800 V |
на замовлення 77 шт: термін постачання 21-31 дні (днів) |
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IMZ120R350M1HXKSA1 | Infineon Technologies |
Description: SICFET N-CH 1.2KV 4.7A TO247-4Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc) Rds On (Max) @ Id, Vgs: 350mOhm @ 2A, 18V Power Dissipation (Max): 60W (Tc) Vgs(th) (Max) @ Id: 5.7V @ 1mA Supplier Device Package: PG-TO247-4-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +23V, -7V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 5.3 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 182 pF @ 800 V |
на замовлення 1184 шт: термін постачання 21-31 дні (днів) |
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TLE5109A16DE2210XUMA1 | Infineon Technologies |
Description: IC ANGLE SENSOR 5.0 VPackaging: Cut Tape (CT) Package / Case: 16-TSSOP (0.154", 3.90mm Width) Mounting Type: Surface Mount Output: Analog Voltage Termination Style: Gull Wing Voltage - Supply: 5V Linearity: ±0.1° Actuator Type: External Magnet, Not Included Technology: Magnetoresistive For Measuring: Angle Supplier Device Package: PG-TDSO-16-2 Rotation Angle - Electrical, Mechanical: 0° ~ 180° Output Signal: Cosine, Sine Part Status: Active Grade: Automotive Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IAUA200N04S5N010AUMA1 | Infineon Technologies |
Description: MOSFET N-CH 40V 200A 5HSOFPackaging: Cut Tape (CT) Package / Case: 5-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200A (Tc) Rds On (Max) @ Id, Vgs: 1mOhm @ 100A, 10V Power Dissipation (Max): 167W (Tc) Vgs(th) (Max) @ Id: 3.4V @ 100µA Supplier Device Package: PG-HSOF-5-1 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 132 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7650 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 2402 шт: термін постачання 21-31 дні (днів) |
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IPG20N04S4L07AATMA1 | Infineon Technologies |
Description: MOSFET 2N-CH 40V 20A 8TDSONPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 65W Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 20A Input Capacitance (Ciss) (Max) @ Vds: 3980pF @ 25V Rds On (Max) @ Id, Vgs: 7.2mOhm @ 17A, 10V Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.2V @ 30µA Supplier Device Package: PG-TDSON-8-10 Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TLE5009A16DE1200XUMA1 | Infineon Technologies |
Description: SENSOR ANGLE 360DEG SMDPackaging: Cut Tape (CT) Package / Case: 16-TSSOP (0.154", 3.90mm Width) Mounting Type: Surface Mount Output: Analog Voltage Operating Temperature: -40°C ~ 125°C Termination Style: Gull Wing Voltage - Supply: 3V ~ 3.6V Actuator Type: External Magnet, Not Included Technology: Magnetoresistive For Measuring: Angle Supplier Device Package: PG-TDSO-16 Rotation Angle - Electrical, Mechanical: 0° ~ 360°, Continuous Output Signal: Cosine, Sine Grade: Automotive Part Status: Active Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TLE5009A16DE1210XUMA1 | Infineon Technologies |
Description: SENSOR ANGLE 360DEG SMDPackaging: Cut Tape (CT) Package / Case: 16-TSSOP (0.154", 3.90mm Width) Mounting Type: Surface Mount Output: Analog Voltage Operating Temperature: -40°C ~ 125°C Termination Style: Gull Wing Voltage - Supply: 3V ~ 3.6V Actuator Type: External Magnet, Not Included Technology: Magnetoresistive For Measuring: Angle Supplier Device Package: PG-TDSO-16 Rotation Angle - Electrical, Mechanical: 0° ~ 360°, Continuous Output Signal: Cosine, Sine Grade: Automotive Part Status: Active Qualification: AEC-Q100 |
на замовлення 6921 шт: термін постачання 21-31 дні (днів) |
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EVALNLM0011DCTOBO1 | Infineon Technologies |
Description: EVAL KIT NLM0011 W/O NFC READERPackaging: Bulk For Use With/Related Products: NLM0011 Frequency: 13.56MHz Type: Near Field Communication (NFC) Supplied Contents: Board(s) |
на замовлення 4 шт: термін постачання 21-31 дні (днів) |
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BTF60702ERVXUMA1 | Infineon Technologies |
Description: IC SWTCH HISIDE SMRTPackaging: Tape & Reel (TR) Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 2 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: High Side Rds On (Typ): 120mOhm Input Type: Non-Inverting Voltage - Load: 5 ~ 36V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 2.3A Ratio - Input:Output: 1:1 Supplier Device Package: PG-TDSO-14-21 Fault Protection: Open Load Detect, Over Temperature, Over Voltage Part Status: Active Grade: Automotive Qualification: AEC-Q100 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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| 111-3046PBF | Infineon Technologies |
Description: IC REGULATOR SMD Packaging: Tube Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| IR3565BMFC04TRP | Infineon Technologies | Description: IC DC/DC MULTIPHASE CTLR |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| IR3565BMFS08TRP | Infineon Technologies |
Description: IC DC/DC MULTIPHASE CTLR Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| 111-4143BPBF | Infineon Technologies | Description: IC REGULATOR CTLR SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| IR3596MMT05TRP | Infineon Technologies | Description: IC DC/DC MULTIPHASE CTLR |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| 111-4144PBF | Infineon Technologies | Description: IC REGULATOR SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| 111-4164PBF | Infineon Technologies | Description: IC REGULATOR SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| 111-3040PBF | Infineon Technologies | Description: IC REGULATOR SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| 111-3045PBF | Infineon Technologies | Description: IC REGULATOR SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| 111-4145PBF | Infineon Technologies |
Description: IC GATE DRVR SMD Packaging: Tube Part Status: Obsolete DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| 111-4146PBF | Infineon Technologies | Description: IC REGULATOR SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| 111-4142BPBF | Infineon Technologies | Description: IC REGULATOR CTLR SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| 111-3060PBF | Infineon Technologies | Description: IC REGULATOR SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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EVAL1EDC20H12AHSIC | Infineon Technologies |
Description: EVAL BD 1EDC20H12AH IMZ120R045M1Packaging: Box Function: Gate Driver Type: Power Management Utilized IC / Part: 1EDC20H12AH, IMZ120R045M1 Supplied Contents: Board(s) Part Status: Obsolete Contents: Board(s) Secondary Attributes: On-Board LEDs |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IMZ120R045M1XKSA1 | Infineon Technologies |
Description: SICFET N-CH 1200V 52A TO247-4Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 52A (Tc) Rds On (Max) @ Id, Vgs: 59mOhm @ 20A, 15V FET Feature: Current Sensing Power Dissipation (Max): 228W (Tc) Vgs(th) (Max) @ Id: 5.7V @ 10mA Supplier Device Package: PG-TO247-4-1 Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): +20V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 800 V |
на замовлення 334 шт: термін постачання 21-31 дні (днів) |
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TC223L16F133NACKXUMA1 | Infineon Technologies |
Description: IC MCU 32BIT 1MB FLASH 100TQFPPackaging: Cut Tape (CT) Package / Case: 100-TQFP Exposed Pad Mounting Type: Surface Mount Speed: 133MHz Program Memory Size: 1MB (1M x 8) RAM Size: 96K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: External Program Memory Type: FLASH EEPROM Size: 96K x 8 Core Processor: TriCore™ Data Converters: A/D 24x12b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 3.3V Connectivity: CANbus, FlexRay, LINbus, QSPI Peripherals: DMA, WDT Supplier Device Package: PG-TQFP-100-23 Part Status: Active Number of I/O: 78 DigiKey Programmable: Not Verified |
на замовлення 1944 шт: термін постачання 21-31 дні (днів) |
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TC212L8F133NACKXUMA1 | Infineon Technologies |
Description: IC MCU 32BIT 512KB FLASH 80TQFPPackaging: Cut Tape (CT) Package / Case: 80-TQFP Exposed Pad Mounting Type: Surface Mount Speed: 133MHz Program Memory Size: 512KB (512K x 8) RAM Size: 96K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: External Program Memory Type: FLASH EEPROM Size: 96K x 8 Core Processor: TriCore™ Data Converters: A/D 24x12b SAR Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 3.3V Connectivity: CANbus, LINbus, QSPI Peripherals: DMA, WDT Supplier Device Package: PG-TQFP-80-7 Part Status: Active Number of I/O: 59 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TC222L16F133NACKXUMA1 | Infineon Technologies |
Description: IC MCU 32BIT 1MB FLASH 80TQFPPackaging: Cut Tape (CT) Package / Case: 80-TQFP Exposed Pad Mounting Type: Surface Mount Speed: 133MHz Program Memory Size: 1MB (1M x 8) RAM Size: 96K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: External Program Memory Type: FLASH EEPROM Size: 96K x 8 Core Processor: TriCore™ Data Converters: A/D 24x12b SAR Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 3.3V Connectivity: CANbus, FlexRay, LINbus, QSPI Peripherals: DMA, WDT Supplier Device Package: PG-TQFP-80-7 Part Status: Active Number of I/O: 59 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TC224L16F133NACKXUMA1 | Infineon Technologies |
Description: IC MCU 32BIT 1MB FLASH 144TQFPPackaging: Cut Tape (CT) Package / Case: 144-LQFP Exposed Pad Mounting Type: Surface Mount Speed: 133MHz Program Memory Size: 1MB (1M x 8) RAM Size: 96K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: External Program Memory Type: FLASH EEPROM Size: 96K x 8 Core Processor: TriCore™ Data Converters: A/D 24x12b SAR Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 3.3V Connectivity: CANbus, FlexRay, LINbus, QSPI Peripherals: DMA, WDT Supplier Device Package: PG-TQFP-144-27 Part Status: Active Number of I/O: 120 DigiKey Programmable: Not Verified |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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KITAURIXTC234TFTTOBO1 | Infineon Technologies |
Description: EVAL TC234 TFT AURIXPackaging: Box Mounting Type: Fixed Type: MCU 32-Bit Contents: Board(s), LCD Core Processor: TriCore™ Utilized IC / Part: TC234 Platform: AURIX |
на замовлення 7 шт: термін постачання 21-31 дні (днів) |
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| AUXVNGP4062D-E | Infineon Technologies |
Description: IC DISCRETE Packaging: Tube Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| AUXHKGP4062D-E | Infineon Technologies |
Description: IC DISCRETE Packaging: Tube Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| AUXEC0368STRL | Infineon Technologies |
Description: IC DISCRETE Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| 64-4073PBF | Infineon Technologies |
Description: IC MOSFET Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
|
DEMODISTANCE2GOTOBO1 | Infineon Technologies |
Description: DISTANCE2GO BGT24MTR11 RADARPackaging: Box For Use With/Related Products: BGT24MTR11, XMC4200 Frequency: 24GHz Type: Transceiver; RADAR Supplied Contents: Board(s) Part Status: Obsolete Sensitivity: 24GHz Interface: USB Sensor Type: Radar Utilized IC / Part: BGT24MTR11, XMC4200 Embedded: Yes, MCU, 32-Bit Sensing Range: 25M |
на замовлення 32 шт: термін постачання 21-31 дні (днів) |
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DEMOSENSE2GOLTOBO1 | Infineon Technologies |
Description: SENSE2GOLPackaging: Box Embedded: No Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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EVALM1CM610N3TOBO1 | Infineon Technologies |
Description: EVAL CIPOS IKCM10H60GA Packaging: Box Function: Motor Controller/Driver Type: Power Management Supplied Contents: Board(s) Part Status: Obsolete Contents: Board(s) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
EVALM13645ATOBO1 | Infineon Technologies |
Description: EVAL CIPOS IRSM836-045APackaging: Box Function: Motor Controller/Driver Type: Power Management Supplied Contents: Board(s) Part Status: Obsolete Contents: Board(s) |
на замовлення 4 шт: термін постачання 21-31 дні (днів) |
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EVALM10565DTOBO1 | Infineon Technologies | Description: EVAL CIPOS IRSM505-065DA2 |
на замовлення 3 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
|
EVALM13644ATOBO1 | Infineon Technologies |
Description: EVAL BOARD FOR M13644ATOBO1Packaging: Box Function: Motor Controller/Driver Type: Power Management Utilized IC / Part: M13644ATOBO1 Supplied Contents: Board(s) Part Status: Active Contents: Board(s) |
на замовлення 4 шт: термін постачання 21-31 дні (днів) |
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EVALM10584DTOBO1 | Infineon Technologies |
Description: EVAL CIPOS IRSM505-084DA2Packaging: Box Function: Motor Controller/Driver Type: Power Management Supplied Contents: Board(s) Part Status: Active Contents: Board(s) |
на замовлення 16 шт: термін постачання 21-31 дні (днів) |
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| SIPC69N60CFDX1SA4 | Infineon Technologies | Description: MOSFET N-CH HI POWER DIE |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| IPI80N04S403BAKSA1 | Infineon Technologies | Description: MOSFET N-CH 40V TO263 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
|
IPB80N04S403JEATMA1 | Infineon Technologies |
Description: MOSFET N-CH 40V 80A TO263-3-2 Packaging: Bulk Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 155°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 3.7mOhm @ 80A, 10V Power Dissipation (Max): 94W (Tc) Vgs(th) (Max) @ Id: 4V @ 53µA Supplier Device Package: PG-TO263-3-2 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5260 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| BSM300GB60DLCE3256HDLA1 | Infineon Technologies |
Description: IGBT MODULE 2 MED POWER Packaging: Tray |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
|
DD1000S33HE3BOSA1 | Infineon Technologies |
Description: DIODE MODULE GP 3300V AGIHVB1303Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 1000A (DC) Supplier Device Package: AG-IHVB130-3 Operating Temperature - Junction: -40°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 3300 V Voltage - Forward (Vf) (Max) @ If: 3.85 V @ 1000 A Current - Reverse Leakage @ Vr: 1000 A @ 1800 V |
товару немає в наявності |
В кошику од. на суму грн. |
| REFAUDIOAMA12040TOBO1 |
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Виробник: Infineon Technologies
Description: EVAL BOARD FOR MA12040
Packaging: Bulk
Output Type: 2-Channel (Stereo)
Amplifier Type: Class D
Voltage - Supply: 5V ~ 18V
Max Output Power x Channels @ Load: 40W x 2 @ 4Ohm
Board Type: Fully Populated
Utilized IC / Part: MA12040
Supplied Contents: Board(s)
Contents: Board(s)
Description: EVAL BOARD FOR MA12040
Packaging: Bulk
Output Type: 2-Channel (Stereo)
Amplifier Type: Class D
Voltage - Supply: 5V ~ 18V
Max Output Power x Channels @ Load: 40W x 2 @ 4Ohm
Board Type: Fully Populated
Utilized IC / Part: MA12040
Supplied Contents: Board(s)
Contents: Board(s)
товару немає в наявності
В кошику
од. на суму грн.
| REFAUDIODMA12040PTOBO1 |
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Виробник: Infineon Technologies
Description: EVAL BOARD FOR MA12040P
Packaging: Bulk
Output Type: 2-Channel (Stereo)
Amplifier Type: Class D
Voltage - Supply: 5V ~ 18V
Max Output Power x Channels @ Load: 40W x 2 @ 4Ohm
Board Type: Fully Populated
Utilized IC / Part: MA12040P
Supplied Contents: Board(s)
Contents: Board(s)
Description: EVAL BOARD FOR MA12040P
Packaging: Bulk
Output Type: 2-Channel (Stereo)
Amplifier Type: Class D
Voltage - Supply: 5V ~ 18V
Max Output Power x Channels @ Load: 40W x 2 @ 4Ohm
Board Type: Fully Populated
Utilized IC / Part: MA12040P
Supplied Contents: Board(s)
Contents: Board(s)
на замовлення 3 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 4831.92 грн |
| IPB156N22NFDATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 220V 72A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
Rds On (Max) @ Id, Vgs: 15.6mOhm @ 50A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 270µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 220 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6930 pF @ 110 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 110
Description: MOSFET N-CH 220V 72A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
Rds On (Max) @ Id, Vgs: 15.6mOhm @ 50A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 270µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 220 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6930 pF @ 110 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 110
на замовлення 1012 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 647.74 грн |
| 10+ | 424.59 грн |
| 100+ | 311.90 грн |
| 500+ | 260.24 грн |
| IPT029N08N5ATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 80V 52A/169A HSOF-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Ta), 169A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 150A, 10V
Power Dissipation (Max): 168W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 108µA
Supplier Device Package: PG-HSOF-8-1
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 40 V
Description: MOSFET N-CH 80V 52A/169A HSOF-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Ta), 169A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 150A, 10V
Power Dissipation (Max): 168W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 108µA
Supplier Device Package: PG-HSOF-8-1
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 40 V
товару немає в наявності
В кошику
од. на суму грн.
| KITLGPWRBOM004TOBO1 |
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Виробник: Infineon Technologies
Description: EVAL POWER BOARD 60V
Packaging: Box
Function: Half H-Bridge Driver (Internal FET)
Type: Power Management
Supplied Contents: Board(s)
Part Status: Active
Description: EVAL POWER BOARD 60V
Packaging: Box
Function: Half H-Bridge Driver (Internal FET)
Type: Power Management
Supplied Contents: Board(s)
Part Status: Active
на замовлення 6 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 4106.32 грн |
| KITLGPWRBOM005TOBO1 |
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Виробник: Infineon Technologies
Description: EVAL POWER BOARD 100V
Description: EVAL POWER BOARD 100V
на замовлення 5 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| KITLGPWRBOM006TOBO1 |
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Виробник: Infineon Technologies
Description: EVAL POWER BOARD 150V
Description: EVAL POWER BOARD 150V
на замовлення 5 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| KITLGPWRBOM008TOBO1 |
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Виробник: Infineon Technologies
Description: EVAL POWER BOARD 250V
Description: EVAL POWER BOARD 250V
на замовлення 5 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| FF1000R17IE4S4BOSA2 |
Виробник: Infineon Technologies
Description: IGBT MOD 1700V 1390A AG-PRIME3-1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 1000A
NTC Thermistor: Yes
Supplier Device Package: AG-PRIME3-1
Current - Collector (Ic) (Max): 1390 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 6250 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 81 pF @ 25 V
Description: IGBT MOD 1700V 1390A AG-PRIME3-1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 1000A
NTC Thermistor: Yes
Supplier Device Package: AG-PRIME3-1
Current - Collector (Ic) (Max): 1390 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 6250 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 81 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| FM24C04B-G2TR |
Виробник: Infineon Technologies
Description: IC FRAM 4KBIT I2C 1MHZ 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 1 MHz
Memory Format: FRAM
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Memory Interface: I²C
Access Time: 550 ns
Memory Organization: 512 x 8
DigiKey Programmable: Not Verified
Description: IC FRAM 4KBIT I2C 1MHZ 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 1 MHz
Memory Format: FRAM
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Memory Interface: I²C
Access Time: 550 ns
Memory Organization: 512 x 8
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
| IMW120R220M1HXKSA1 |
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Виробник: Infineon Technologies
Description: SICFET N-CH 1.2KV 13A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 286mOhm @ 4A, 18V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 1.6mA
Supplier Device Package: PG-TO247-3-41
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 289 pF @ 800 V
Description: SICFET N-CH 1.2KV 13A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 286mOhm @ 4A, 18V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 1.6mA
Supplier Device Package: PG-TO247-3-41
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 289 pF @ 800 V
на замовлення 560 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 462.06 грн |
| 30+ | 253.51 грн |
| 120+ | 211.51 грн |
| 510+ | 171.56 грн |
| IMW120R350M1HXKSA1 |
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Виробник: Infineon Technologies
Description: SICFET N-CH 1.2KV 4.7A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
Rds On (Max) @ Id, Vgs: 455mOhm @ 2A, 18V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 1mA
Supplier Device Package: PG-TO247-3-41
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 5.3 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 182 pF @ 800 V
Description: SICFET N-CH 1.2KV 4.7A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
Rds On (Max) @ Id, Vgs: 455mOhm @ 2A, 18V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 1mA
Supplier Device Package: PG-TO247-3-41
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 5.3 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 182 pF @ 800 V
на замовлення 1143 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 411.57 грн |
| 30+ | 224.09 грн |
| 120+ | 186.16 грн |
| 510+ | 148.59 грн |
| 1020+ | 147.27 грн |
| IMZ120R140M1HXKSA1 |
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Виробник: Infineon Technologies
Description: SICFET N-CH 1.2KV 19A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 182mOhm @ 6A, 18V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 2.5mA
Supplier Device Package: PG-TO247-4-1
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 454 pF @ 800 V
Description: SICFET N-CH 1.2KV 19A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 182mOhm @ 6A, 18V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 2.5mA
Supplier Device Package: PG-TO247-4-1
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 454 pF @ 800 V
на замовлення 15 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 577.57 грн |
| IMZ120R220M1HXKSA1 |
![]() |
Виробник: Infineon Technologies
Description: SICFET N-CH 1.2KV 13A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 4A, 18V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 1.6mA
Supplier Device Package: PG-TO247-4-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 289 pF @ 800 V
Description: SICFET N-CH 1.2KV 13A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 4A, 18V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 1.6mA
Supplier Device Package: PG-TO247-4-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 289 pF @ 800 V
на замовлення 77 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 500.56 грн |
| 30+ | 276.74 грн |
| IMZ120R350M1HXKSA1 |
![]() |
Виробник: Infineon Technologies
Description: SICFET N-CH 1.2KV 4.7A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 2A, 18V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 1mA
Supplier Device Package: PG-TO247-4-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 5.3 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 182 pF @ 800 V
Description: SICFET N-CH 1.2KV 4.7A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 2A, 18V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 1mA
Supplier Device Package: PG-TO247-4-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 5.3 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 182 pF @ 800 V
на замовлення 1184 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 450.93 грн |
| 30+ | 247.27 грн |
| 120+ | 206.13 грн |
| 510+ | 166.36 грн |
| TLE5109A16DE2210XUMA1 |
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Виробник: Infineon Technologies
Description: IC ANGLE SENSOR 5.0 V
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Analog Voltage
Termination Style: Gull Wing
Voltage - Supply: 5V
Linearity: ±0.1°
Actuator Type: External Magnet, Not Included
Technology: Magnetoresistive
For Measuring: Angle
Supplier Device Package: PG-TDSO-16-2
Rotation Angle - Electrical, Mechanical: 0° ~ 180°
Output Signal: Cosine, Sine
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
Description: IC ANGLE SENSOR 5.0 V
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Analog Voltage
Termination Style: Gull Wing
Voltage - Supply: 5V
Linearity: ±0.1°
Actuator Type: External Magnet, Not Included
Technology: Magnetoresistive
For Measuring: Angle
Supplier Device Package: PG-TDSO-16-2
Rotation Angle - Electrical, Mechanical: 0° ~ 180°
Output Signal: Cosine, Sine
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
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| IAUA200N04S5N010AUMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 200A 5HSOF
Packaging: Cut Tape (CT)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 1mOhm @ 100A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 100µA
Supplier Device Package: PG-HSOF-5-1
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 132 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7650 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 200A 5HSOF
Packaging: Cut Tape (CT)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 1mOhm @ 100A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 100µA
Supplier Device Package: PG-HSOF-5-1
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 132 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7650 pF @ 25 V
Qualification: AEC-Q101
на замовлення 2402 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 237.02 грн |
| 10+ | 148.56 грн |
| 100+ | 103.03 грн |
| 500+ | 82.07 грн |
| IPG20N04S4L07AATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET 2N-CH 40V 20A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 65W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 3980pF @ 25V
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 30µA
Supplier Device Package: PG-TDSON-8-10
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N-CH 40V 20A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 65W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 3980pF @ 25V
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 30µA
Supplier Device Package: PG-TDSON-8-10
Grade: Automotive
Qualification: AEC-Q101
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| TLE5009A16DE1200XUMA1 |
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Виробник: Infineon Technologies
Description: SENSOR ANGLE 360DEG SMD
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Analog Voltage
Operating Temperature: -40°C ~ 125°C
Termination Style: Gull Wing
Voltage - Supply: 3V ~ 3.6V
Actuator Type: External Magnet, Not Included
Technology: Magnetoresistive
For Measuring: Angle
Supplier Device Package: PG-TDSO-16
Rotation Angle - Electrical, Mechanical: 0° ~ 360°, Continuous
Output Signal: Cosine, Sine
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
Description: SENSOR ANGLE 360DEG SMD
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Analog Voltage
Operating Temperature: -40°C ~ 125°C
Termination Style: Gull Wing
Voltage - Supply: 3V ~ 3.6V
Actuator Type: External Magnet, Not Included
Technology: Magnetoresistive
For Measuring: Angle
Supplier Device Package: PG-TDSO-16
Rotation Angle - Electrical, Mechanical: 0° ~ 360°, Continuous
Output Signal: Cosine, Sine
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
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| TLE5009A16DE1210XUMA1 |
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Виробник: Infineon Technologies
Description: SENSOR ANGLE 360DEG SMD
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Analog Voltage
Operating Temperature: -40°C ~ 125°C
Termination Style: Gull Wing
Voltage - Supply: 3V ~ 3.6V
Actuator Type: External Magnet, Not Included
Technology: Magnetoresistive
For Measuring: Angle
Supplier Device Package: PG-TDSO-16
Rotation Angle - Electrical, Mechanical: 0° ~ 360°, Continuous
Output Signal: Cosine, Sine
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
Description: SENSOR ANGLE 360DEG SMD
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Analog Voltage
Operating Temperature: -40°C ~ 125°C
Termination Style: Gull Wing
Voltage - Supply: 3V ~ 3.6V
Actuator Type: External Magnet, Not Included
Technology: Magnetoresistive
For Measuring: Angle
Supplier Device Package: PG-TDSO-16
Rotation Angle - Electrical, Mechanical: 0° ~ 360°, Continuous
Output Signal: Cosine, Sine
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
на замовлення 6921 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 398.74 грн |
| 5+ | 344.58 грн |
| 10+ | 330.08 грн |
| 25+ | 293.66 грн |
| 50+ | 282.58 грн |
| 100+ | 272.44 грн |
| 500+ | 251.65 грн |
| EVALNLM0011DCTOBO1 |
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Виробник: Infineon Technologies
Description: EVAL KIT NLM0011 W/O NFC READER
Packaging: Bulk
For Use With/Related Products: NLM0011
Frequency: 13.56MHz
Type: Near Field Communication (NFC)
Supplied Contents: Board(s)
Description: EVAL KIT NLM0011 W/O NFC READER
Packaging: Bulk
For Use With/Related Products: NLM0011
Frequency: 13.56MHz
Type: Near Field Communication (NFC)
Supplied Contents: Board(s)
на замовлення 4 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 2160.55 грн |
| BTF60702ERVXUMA1 |
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Виробник: Infineon Technologies
Description: IC SWTCH HISIDE SMRT
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 120mOhm
Input Type: Non-Inverting
Voltage - Load: 5 ~ 36V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2.3A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TDSO-14-21
Fault Protection: Open Load Detect, Over Temperature, Over Voltage
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
Description: IC SWTCH HISIDE SMRT
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 120mOhm
Input Type: Non-Inverting
Voltage - Load: 5 ~ 36V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2.3A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TDSO-14-21
Fault Protection: Open Load Detect, Over Temperature, Over Voltage
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 148.52 грн |
| IR3565BMFC04TRP |
Виробник: Infineon Technologies
Description: IC DC/DC MULTIPHASE CTLR
Description: IC DC/DC MULTIPHASE CTLR
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В кошику
од. на суму грн.
| 111-4143BPBF |
Виробник: Infineon Technologies
Description: IC REGULATOR CTLR SMD
Description: IC REGULATOR CTLR SMD
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| IR3596MMT05TRP |
Виробник: Infineon Technologies
Description: IC DC/DC MULTIPHASE CTLR
Description: IC DC/DC MULTIPHASE CTLR
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| 111-4144PBF |
Виробник: Infineon Technologies
Description: IC REGULATOR SMD
Description: IC REGULATOR SMD
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| 111-4164PBF |
Виробник: Infineon Technologies
Description: IC REGULATOR SMD
Description: IC REGULATOR SMD
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| 111-3040PBF |
Виробник: Infineon Technologies
Description: IC REGULATOR SMD
Description: IC REGULATOR SMD
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| 111-3045PBF |
Виробник: Infineon Technologies
Description: IC REGULATOR SMD
Description: IC REGULATOR SMD
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| 111-4145PBF |
Виробник: Infineon Technologies
Description: IC GATE DRVR SMD
Packaging: Tube
Part Status: Obsolete
DigiKey Programmable: Not Verified
Description: IC GATE DRVR SMD
Packaging: Tube
Part Status: Obsolete
DigiKey Programmable: Not Verified
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| 111-4146PBF |
Виробник: Infineon Technologies
Description: IC REGULATOR SMD
Description: IC REGULATOR SMD
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| 111-4142BPBF |
Виробник: Infineon Technologies
Description: IC REGULATOR CTLR SMD
Description: IC REGULATOR CTLR SMD
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| 111-3060PBF |
Виробник: Infineon Technologies
Description: IC REGULATOR SMD
Description: IC REGULATOR SMD
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В кошику
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| EVAL1EDC20H12AHSIC |
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Виробник: Infineon Technologies
Description: EVAL BD 1EDC20H12AH IMZ120R045M1
Packaging: Box
Function: Gate Driver
Type: Power Management
Utilized IC / Part: 1EDC20H12AH, IMZ120R045M1
Supplied Contents: Board(s)
Part Status: Obsolete
Contents: Board(s)
Secondary Attributes: On-Board LEDs
Description: EVAL BD 1EDC20H12AH IMZ120R045M1
Packaging: Box
Function: Gate Driver
Type: Power Management
Utilized IC / Part: 1EDC20H12AH, IMZ120R045M1
Supplied Contents: Board(s)
Part Status: Obsolete
Contents: Board(s)
Secondary Attributes: On-Board LEDs
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| IMZ120R045M1XKSA1 |
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Виробник: Infineon Technologies
Description: SICFET N-CH 1200V 52A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 59mOhm @ 20A, 15V
FET Feature: Current Sensing
Power Dissipation (Max): 228W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 10mA
Supplier Device Package: PG-TO247-4-1
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +20V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 800 V
Description: SICFET N-CH 1200V 52A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 59mOhm @ 20A, 15V
FET Feature: Current Sensing
Power Dissipation (Max): 228W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 10mA
Supplier Device Package: PG-TO247-4-1
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +20V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 800 V
на замовлення 334 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1168.83 грн |
| 30+ | 688.92 грн |
| 120+ | 593.26 грн |
| TC223L16F133NACKXUMA1 |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 1MB FLASH 100TQFP
Packaging: Cut Tape (CT)
Package / Case: 100-TQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 133MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 96K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 96K x 8
Core Processor: TriCore™
Data Converters: A/D 24x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 3.3V
Connectivity: CANbus, FlexRay, LINbus, QSPI
Peripherals: DMA, WDT
Supplier Device Package: PG-TQFP-100-23
Part Status: Active
Number of I/O: 78
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 1MB FLASH 100TQFP
Packaging: Cut Tape (CT)
Package / Case: 100-TQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 133MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 96K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 96K x 8
Core Processor: TriCore™
Data Converters: A/D 24x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 3.3V
Connectivity: CANbus, FlexRay, LINbus, QSPI
Peripherals: DMA, WDT
Supplier Device Package: PG-TQFP-100-23
Part Status: Active
Number of I/O: 78
DigiKey Programmable: Not Verified
на замовлення 1944 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1014.81 грн |
| 10+ | 770.91 грн |
| 25+ | 719.39 грн |
| 100+ | 621.98 грн |
| 250+ | 596.65 грн |
| 500+ | 581.39 грн |
| TC212L8F133NACKXUMA1 |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 512KB FLASH 80TQFP
Packaging: Cut Tape (CT)
Package / Case: 80-TQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 133MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 96K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 96K x 8
Core Processor: TriCore™
Data Converters: A/D 24x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 3.3V
Connectivity: CANbus, LINbus, QSPI
Peripherals: DMA, WDT
Supplier Device Package: PG-TQFP-80-7
Part Status: Active
Number of I/O: 59
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 512KB FLASH 80TQFP
Packaging: Cut Tape (CT)
Package / Case: 80-TQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 133MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 96K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 96K x 8
Core Processor: TriCore™
Data Converters: A/D 24x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 3.3V
Connectivity: CANbus, LINbus, QSPI
Peripherals: DMA, WDT
Supplier Device Package: PG-TQFP-80-7
Part Status: Active
Number of I/O: 59
DigiKey Programmable: Not Verified
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| TC222L16F133NACKXUMA1 |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 1MB FLASH 80TQFP
Packaging: Cut Tape (CT)
Package / Case: 80-TQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 133MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 96K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 96K x 8
Core Processor: TriCore™
Data Converters: A/D 24x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 3.3V
Connectivity: CANbus, FlexRay, LINbus, QSPI
Peripherals: DMA, WDT
Supplier Device Package: PG-TQFP-80-7
Part Status: Active
Number of I/O: 59
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 1MB FLASH 80TQFP
Packaging: Cut Tape (CT)
Package / Case: 80-TQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 133MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 96K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 96K x 8
Core Processor: TriCore™
Data Converters: A/D 24x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 3.3V
Connectivity: CANbus, FlexRay, LINbus, QSPI
Peripherals: DMA, WDT
Supplier Device Package: PG-TQFP-80-7
Part Status: Active
Number of I/O: 59
DigiKey Programmable: Not Verified
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| TC224L16F133NACKXUMA1 |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 1MB FLASH 144TQFP
Packaging: Cut Tape (CT)
Package / Case: 144-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 133MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 96K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 96K x 8
Core Processor: TriCore™
Data Converters: A/D 24x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 3.3V
Connectivity: CANbus, FlexRay, LINbus, QSPI
Peripherals: DMA, WDT
Supplier Device Package: PG-TQFP-144-27
Part Status: Active
Number of I/O: 120
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 1MB FLASH 144TQFP
Packaging: Cut Tape (CT)
Package / Case: 144-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 133MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 96K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 96K x 8
Core Processor: TriCore™
Data Converters: A/D 24x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 3.3V
Connectivity: CANbus, FlexRay, LINbus, QSPI
Peripherals: DMA, WDT
Supplier Device Package: PG-TQFP-144-27
Part Status: Active
Number of I/O: 120
DigiKey Programmable: Not Verified
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1090.11 грн |
| 10+ | 829.82 грн |
| 25+ | 774.89 грн |
| 100+ | 670.49 грн |
| 250+ | 643.46 грн |
| 500+ | 627.18 грн |
| KITAURIXTC234TFTTOBO1 |
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Виробник: Infineon Technologies
Description: EVAL TC234 TFT AURIX
Packaging: Box
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s), LCD
Core Processor: TriCore™
Utilized IC / Part: TC234
Platform: AURIX
Description: EVAL TC234 TFT AURIX
Packaging: Box
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s), LCD
Core Processor: TriCore™
Utilized IC / Part: TC234
Platform: AURIX
на замовлення 7 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 21948.58 грн |
| DEMODISTANCE2GOTOBO1 |
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Виробник: Infineon Technologies
Description: DISTANCE2GO BGT24MTR11 RADAR
Packaging: Box
For Use With/Related Products: BGT24MTR11, XMC4200
Frequency: 24GHz
Type: Transceiver; RADAR
Supplied Contents: Board(s)
Part Status: Obsolete
Sensitivity: 24GHz
Interface: USB
Sensor Type: Radar
Utilized IC / Part: BGT24MTR11, XMC4200
Embedded: Yes, MCU, 32-Bit
Sensing Range: 25M
Description: DISTANCE2GO BGT24MTR11 RADAR
Packaging: Box
For Use With/Related Products: BGT24MTR11, XMC4200
Frequency: 24GHz
Type: Transceiver; RADAR
Supplied Contents: Board(s)
Part Status: Obsolete
Sensitivity: 24GHz
Interface: USB
Sensor Type: Radar
Utilized IC / Part: BGT24MTR11, XMC4200
Embedded: Yes, MCU, 32-Bit
Sensing Range: 25M
на замовлення 32 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 17482.88 грн |
| DEMOSENSE2GOLTOBO1 |
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Виробник: Infineon Technologies
Description: SENSE2GOL
Packaging: Box
Embedded: No
Part Status: Obsolete
Description: SENSE2GOL
Packaging: Box
Embedded: No
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
| EVALM1CM610N3TOBO1 |
Виробник: Infineon Technologies
Description: EVAL CIPOS IKCM10H60GA
Packaging: Box
Function: Motor Controller/Driver
Type: Power Management
Supplied Contents: Board(s)
Part Status: Obsolete
Contents: Board(s)
Description: EVAL CIPOS IKCM10H60GA
Packaging: Box
Function: Motor Controller/Driver
Type: Power Management
Supplied Contents: Board(s)
Part Status: Obsolete
Contents: Board(s)
товару немає в наявності
В кошику
од. на суму грн.
| EVALM13645ATOBO1 |
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Виробник: Infineon Technologies
Description: EVAL CIPOS IRSM836-045A
Packaging: Box
Function: Motor Controller/Driver
Type: Power Management
Supplied Contents: Board(s)
Part Status: Obsolete
Contents: Board(s)
Description: EVAL CIPOS IRSM836-045A
Packaging: Box
Function: Motor Controller/Driver
Type: Power Management
Supplied Contents: Board(s)
Part Status: Obsolete
Contents: Board(s)
на замовлення 4 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 9446.51 грн |
| EVALM10565DTOBO1 |
Виробник: Infineon Technologies
Description: EVAL CIPOS IRSM505-065DA2
Description: EVAL CIPOS IRSM505-065DA2
на замовлення 3 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| EVALM13644ATOBO1 |
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Виробник: Infineon Technologies
Description: EVAL BOARD FOR M13644ATOBO1
Packaging: Box
Function: Motor Controller/Driver
Type: Power Management
Utilized IC / Part: M13644ATOBO1
Supplied Contents: Board(s)
Part Status: Active
Contents: Board(s)
Description: EVAL BOARD FOR M13644ATOBO1
Packaging: Box
Function: Motor Controller/Driver
Type: Power Management
Utilized IC / Part: M13644ATOBO1
Supplied Contents: Board(s)
Part Status: Active
Contents: Board(s)
на замовлення 4 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 9379.76 грн |
| EVALM10584DTOBO1 |
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Виробник: Infineon Technologies
Description: EVAL CIPOS IRSM505-084DA2
Packaging: Box
Function: Motor Controller/Driver
Type: Power Management
Supplied Contents: Board(s)
Part Status: Active
Contents: Board(s)
Description: EVAL CIPOS IRSM505-084DA2
Packaging: Box
Function: Motor Controller/Driver
Type: Power Management
Supplied Contents: Board(s)
Part Status: Active
Contents: Board(s)
на замовлення 16 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 9181.25 грн |
| SIPC69N60CFDX1SA4 |
Виробник: Infineon Technologies
Description: MOSFET N-CH HI POWER DIE
Description: MOSFET N-CH HI POWER DIE
товару немає в наявності
В кошику
од. на суму грн.
| IPI80N04S403BAKSA1 |
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V TO263
Description: MOSFET N-CH 40V TO263
товару немає в наявності
В кошику
од. на суму грн.
| IPB80N04S403JEATMA1 |
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 80A TO263-3-2
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 80A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 4V @ 53µA
Supplier Device Package: PG-TO263-3-2
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5260 pF @ 25 V
Description: MOSFET N-CH 40V 80A TO263-3-2
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 80A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 4V @ 53µA
Supplier Device Package: PG-TO263-3-2
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5260 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| DD1000S33HE3BOSA1 |
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Виробник: Infineon Technologies
Description: DIODE MODULE GP 3300V AGIHVB1303
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 1000A (DC)
Supplier Device Package: AG-IHVB130-3
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 3300 V
Voltage - Forward (Vf) (Max) @ If: 3.85 V @ 1000 A
Current - Reverse Leakage @ Vr: 1000 A @ 1800 V
Description: DIODE MODULE GP 3300V AGIHVB1303
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 1000A (DC)
Supplier Device Package: AG-IHVB130-3
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 3300 V
Voltage - Forward (Vf) (Max) @ If: 3.85 V @ 1000 A
Current - Reverse Leakage @ Vr: 1000 A @ 1800 V
товару немає в наявності
В кошику
од. на суму грн.

































