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SIGC61T60NCX7SA1 SIGC61T60NCX7SA1 Infineon Technologies Description: IGBT 3 CHIP 600V WAFER
Current - Collector Pulsed (Icm): 225 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 75 A
Test Condition: 300V, 75A, 3Ohm, 15V
Td (on/off) @ 25°C: 65ns/170ns
IGBT Type: NPT
Supplier Device Package: Die
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 75A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
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SIDC14D60E6X1SA3 Infineon Technologies SIDC14D60E6_ed1_7-1-02.pdf Description: DIODE STANDARD 600V 30A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: Die
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 30 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
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SIDC06D60E6X1SA4 Infineon Technologies SIDC06D60E6_ed1_3-12-01.pdf Description: DIODE STANDARD 600V 10A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: Die
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 10 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
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SIDC04D60F6X1SA2 Infineon Technologies SIDC04D60F6_ed2.1_9-3-10.pdf Description: DIODE STANDARD 600V 9A DIE
Packaging: Bulk
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 9 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: Die
Current - Average Rectified (Io): 9A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: Die
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SIDC14D60C8X1SA3 Infineon Technologies Infineon-SIDC14D60C8_L4024M-DS-v01_02-en.pdf?fileId=db3a30433c8a9179013c8ff64902577e Description: DIODE GEN PURP 600V 50A DIE
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 50 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: Die
Current - Average Rectified (Io): 50A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
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SIDC14D60F6X1SA3 Infineon Technologies SIDC14D60F6_ed2.1_9-3-10.pdf Description: DIODE STANDARD 600V 45A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 45A
Supplier Device Package: Die
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 45 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
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SIDC26D60C8X1SA1 SIDC26D60C8X1SA1 Infineon Technologies Infineon-SIDC26D60C8_L4028M-DS-v01_02-en.pdf?fileId=db3a30433c8a9179013c9039e2405834 Description: DIODE STANDARD 600V 100A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 100A
Supplier Device Package: Die
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 100 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 100
Voltage Coupled to Current - Reverse Leakage @ Vr: 600
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SIDC08D60C8X1SA1 Infineon Technologies Infineon-SIDC08D60C8_L4022M-DS-v01_02-en.pdf?fileId=db3a30433c8a9179013c8feff14c5770 Description: DIODE GEN PURP 600V 30A DIE
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: Die
Current - Average Rectified (Io): 30A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
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SIDC04D60F6X1SA4 Infineon Technologies SIDC04D60F6_ed2.1_9-3-10.pdf Description: DIODE STANDARD 600V 9A DIE
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 9 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: Die
Current - Average Rectified (Io): 9A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
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SIGC25T60NCX7SA1 Infineon Technologies Description: IGBT 3 CHIP 600V WAFER
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SIDC14D60F6X1SA1 Infineon Technologies SIDC14D60F6_ed2.1_9-3-10.pdf Description: DIODE STANDARD 600V 45A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 45A
Supplier Device Package: Die
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 45 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
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SIGC81T60SNCX7SA1 SIGC81T60SNCX7SA1 Infineon Technologies Description: IGBT 3 CHIP 600V WAFER
Current - Collector Pulsed (Icm): 300 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 100 A
Part Status: Obsolete
Test Condition: 400V, 100A, 3.3Ohm, 15V
Td (on/off) @ 25°C: 65ns/450ns
IGBT Type: NPT
Supplier Device Package: Die
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 100A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
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SIDC14D60C8X1SA2 SIDC14D60C8X1SA2 Infineon Technologies Infineon-SIDC14D60C8_L4024M-DS-v01_02-en.pdf?fileId=db3a30433c8a9179013c8ff64902577e Description: DIODE STANDARD 600V 50A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 50A
Supplier Device Package: Die
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 50 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
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REFICL5102HVU150WTOBO1 REFICL5102HVU150WTOBO1 Infineon Technologies Infineon-Referencedesign_REF-ICL-5102HV-U150W-ApplicationNotes-v01_00-EN.pdf?fileId=5546d4626eab8fbf016eac0dac4f0023 Description: EVAL BOARD FOR ICL5102HV
Contents: Board(s)
Part Status: Active
Outputs and Type: 1 Non-Isolated Output
Current - Output / Channel: 3A
Voltage - Input: 277 ~ 528 VAC
Voltage - Output: 17V ~ 48V
Packaging: Box
Supplied Contents: Board(s)
Utilized IC / Part: ICL5102HV
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FS380R12A6T4BBPSA1 FS380R12A6T4BBPSA1 Infineon Technologies Infineon-FS380R12A6T4B-DataSheet-v03_01-EN.pdf?fileId=5546d4626da6c043016db9e750e268b1 Description: IGBT MODULE 1200V 380A
Input Capacitance (Cies) @ Vce: 19 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Current - Collector (Ic) (Max): 380 A
Part Status: Active
IGBT Type: Trench Field Stop
Supplier Device Package: AG-HYBRIDD-2
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 250A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Three Phase Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Power - Max: 870 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
на замовлення 6 шт:
термін постачання 21-31 дні (днів)
1+45030.66 грн
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TLE92108232QXXUMA1 TLE92108232QXXUMA1 Infineon Technologies Infineon-TLE92108-232QX-DataSheet-v01_00-EN.pdf?fileId=5546d462749a7c2d01749b3138d607ed Description: IC GATE DRVR HALF-BRIDGE 48VFQFN
Supplier Device Package: PG-VQFN-48-31
High Side Voltage - Max (Bootstrap): 950 V
Input Type: Non-Inverting
Voltage - Supply: 6V ~ 28V
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Part Status: Active
Current - Peak Output (Source, Sink): 100mA, 100mA
Gate Type: IGBT, MOSFET (N-Channel)
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Synchronous
DigiKey Programmable: Not Verified
товару немає в наявності
 Мінімальне замовлення: 2500 шт
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FS950R08A6P2BBPSA1 FS950R08A6P2BBPSA1 Infineon Technologies Infineon-FS950R08A6P2B-DataSheet-v03_00-EN.pdf?fileId=5546d4626da6c043016db9e7586868b4 Description: IGBT MOD 750V 950A AG-HYBRIDD-2
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 450A
NTC Thermistor: Yes
Supplier Device Package: AG-HYBRIDD-2
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 950 A
Voltage - Collector Emitter Breakdown (Max): 750 V
Power - Max: 870 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 80 nF @ 50 V
на замовлення 12 шт:
термін постачання 21-31 дні (днів)
1+22369.26 грн
12+20590.47 грн
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TLS715B0TSNPBOARDTOBO1 TLS715B0TSNPBOARDTOBO1 Infineon Technologies Description: EVAL TLS715B0NAV50 LDO
Channels per IC: 1 - Single
Supplied Contents: Board(s)
Utilized IC / Part: TLS715B0NAV50
Board Type: Fully Populated
Regulator Type: Positive Fixed
Current - Output: 150mA
Voltage - Input: 4V ~ 40V
Voltage - Output: 5V
Packaging: Box
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
1+2004.69 грн
В кошику  од. на суму  грн.
TLE9210823QXAPPKITTOBO1 TLE9210823QXAPPKITTOBO1 Infineon Technologies TLE92108-23QX_APPKIT_Web.pdf Description: EVAL MOSFET DRVR TLE92018 MOTIX
Part Status: Active
Supplied Contents: Board(s)
Utilized IC / Part: TLE9210823
Type: Power Management
Function: Gate Driver
Packaging: Box
на замовлення 8 шт:
термін постачання 21-31 дні (днів)
1+3890.04 грн
В кошику  од. на суму  грн.
EVALM5E1B1245NSICTOBO1 EVALM5E1B1245NSICTOBO1 Infineon Technologies Infineon-EVAL-M5-E1B1245N-SiC-ApplicationNotes-v01_00-EN.pdf?fileId=5546d4626cb27db2016d438785217e27 Description: EVAL COOLSIC MOSFET MOTOR DRIVER
Supplied Contents: Board(s)
Utilized IC / Part: 1EDI20H12AH
Type: Power Management
Function: Gate Driver
Packaging: Box
Contents: Board(s)
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TLE92108231QXXUMA1 TLE92108231QXXUMA1 Infineon Technologies Infineon-TLE92108-231QX-DataSheet-v01_00-EN.pdf?fileId=5546d462749a7c2d01749b323e140979 Description: IC GATE DRVR HALF-BRIDGE 48VFQFN
Part Status: Active
Current - Peak Output (Source, Sink): 100mA, 100mA
Gate Type: IGBT, N-Channel MOSFET
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Synchronous
Supplier Device Package: PG-VQFN-48-31
High Side Voltage - Max (Bootstrap): 950 V
Input Type: Non-Inverting
Voltage - Supply: 6V ~ 28V
Mounting Type: Surface Mount
DigiKey Programmable: Not Verified
Package / Case: 48-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)
2500+136.44 грн
5000+128.87 грн
Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
ICL5102HVXUMA1 ICL5102HVXUMA1 Infineon Technologies Infineon-ICL5102HV-DataSheet-v01_02-EN.pdf?fileId=5546d4626c1f3dc3016c70f543a736d6 Description: IC LED DRIVER OFFL NO 19DSO
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width), 19 Leads
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 1.3MHz
Type: AC DC Offline Switcher
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Lighting
Internal Switch(s): No
Topology: Half-Bridge
Supplier Device Package: PG-DSO-19-1
Dimming: No
Voltage - Supply (Min): 8.5V
Voltage - Supply (Max): 18V
Part Status: Active
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
1000+130.41 грн
2000+122.54 грн
3000+121.01 грн
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
TLD22522EPXUMA1 TLD22522EPXUMA1 Infineon Technologies Infineon-TLD2252-2EP-DataSheet-v01_00-EN.pdf?fileId=5546d4626da6c043016dba1517ee6995 Description: IC LED DRVR CTRLR PWM 14TSDSO
Grade: Automotive
Voltage - Supply (Max): 18V
Voltage - Supply (Min): 8.5V
Dimming: PWM
Supplier Device Package: PG-TSDSO-14
Topology: Switched Capacitor (Charge Pump)
Internal Switch(s): No
Current - Output / Channel: 120mA
Applications: Lighting
Operating Temperature: -40°C ~ 150°C (TJ)
Type: DC DC Controller
Number of Outputs: 2
Mounting Type: Surface Mount
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Packaging: Tape & Reel (TR)
товару немає в наявності
 Мінімальне замовлення: 3000 шт
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TLD22522EPXUMA1 TLD22522EPXUMA1 Infineon Technologies Infineon-TLD2252-2EP-DataSheet-v01_00-EN.pdf?fileId=5546d4626da6c043016dba1517ee6995 Description: IC LED DRVR CTRLR PWM 14TSDSO
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Packaging: Cut Tape (CT)
Grade: Automotive
Voltage - Supply (Max): 18V
Voltage - Supply (Min): 8.5V
Dimming: PWM
Supplier Device Package: PG-TSDSO-14
Topology: Switched Capacitor (Charge Pump)
Internal Switch(s): No
Current - Output / Channel: 120mA
Applications: Lighting
Operating Temperature: -40°C ~ 150°C (TJ)
Type: DC DC Controller
Number of Outputs: 2
Mounting Type: Surface Mount
на замовлення 2950 шт:
термін постачання 21-31 дні (днів)
3+106.94 грн
10+74.92 грн
25+67.96 грн
100+56.60 грн
250+53.17 грн
500+51.10 грн
1000+48.59 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
ICL5102HVXUMA1 ICL5102HVXUMA1 Infineon Technologies Infineon-ICL5102HV-DataSheet-v01_02-EN.pdf?fileId=5546d4626c1f3dc3016c70f543a736d6 Description: IC LED DRIVER OFFL NO 19DSO
Packaging: Cut Tape (CT)
Package / Case: 20-SOIC (0.295", 7.50mm Width), 19 Leads
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 1.3MHz
Type: AC DC Offline Switcher
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Lighting
Internal Switch(s): No
Topology: Half-Bridge
Supplier Device Package: PG-DSO-19-1
Dimming: No
Voltage - Supply (Min): 8.5V
Voltage - Supply (Max): 18V
Part Status: Active
на замовлення 3930 шт:
термін постачання 21-31 дні (днів)
2+237.12 грн
10+171.11 грн
25+156.88 грн
100+132.56 грн
250+125.55 грн
500+121.33 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IRAUDAMP23 IRAUDAMP23 Infineon Technologies Infineon-IRAUDAMP23-DataSheet-v01_00-EN.pdf?fileId=5546d462677d0f4601679746020259b4 Description: EVAL BOARD FOR IRS2452AM
Amplifier Type: Class D
Output Type: 2-Channel (Stereo)
Packaging: Box
Contents: Board(s)
Part Status: Active
Supplied Contents: Board(s)
Utilized IC / Part: IRS2452AM
Board Type: Fully Populated
Max Output Power x Channels @ Load: 600W x 2 @ 20Ohm
Voltage - Supply: ±80V ~ 160V
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
1+19750.85 грн
В кошику  од. на суму  грн.
TLE5014SP16E0002XUMA1 TLE5014SP16E0002XUMA1 Infineon Technologies Infineon-TLE5014SP16%20E0002-DataSheet-v01_01-EN.pdf?fileId=5546d4626eab8fbf016ed1115f552acc Description: GMR-BASED ANGLE SENSOR
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Wheatstone Bridge
Operating Temperature: -40°C ~ 125°C (TA)
Termination Style: Gull Wing
Voltage - Supply: 3V ~ 5.5V
Actuator Type: External Magnet, Not Included
Technology: Magnetoresistive
For Measuring: Angle
Supplier Device Package: PG-TDSO-16-1
Rotation Angle - Electrical, Mechanical: 0° ~ 360°, Continuous
Output Signal: Cosine, Sine
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
 Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
TLE5014SP16E0001XUMA1 TLE5014SP16E0001XUMA1 Infineon Technologies Infineon-TLE5014SP16%20E0001-DataSheet-v01_01-EN.pdf?fileId=5546d4626eab8fbf016ed1116a022ad0 Description: GMR-BASED ANGLE SENSOR
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Wheatstone Bridge
Operating Temperature: -40°C ~ 125°C (TA)
Termination Style: Gull Wing
Voltage - Supply: 3V ~ 5.5V
Actuator Type: External Magnet, Not Included
Technology: Magnetoresistive
For Measuring: Angle
Supplier Device Package: PG-TDSO-16-1
Rotation Angle - Electrical, Mechanical: 0° ~ 360°, Continuous
Output Signal: Cosine, Sine
Part Status: Active
товару немає в наявності
 Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
TLE5014SP16E0001XUMA1 TLE5014SP16E0001XUMA1 Infineon Technologies Infineon-TLE5014SP16%20E0001-DataSheet-v01_01-EN.pdf?fileId=5546d4626eab8fbf016ed1116a022ad0 Description: GMR-BASED ANGLE SENSOR
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Wheatstone Bridge
Operating Temperature: -40°C ~ 125°C (TA)
Termination Style: Gull Wing
Voltage - Supply: 3V ~ 5.5V
Actuator Type: External Magnet, Not Included
Technology: Magnetoresistive
For Measuring: Angle
Supplier Device Package: PG-TDSO-16-1
Rotation Angle - Electrical, Mechanical: 0° ~ 360°, Continuous
Output Signal: Cosine, Sine
Part Status: Active
товару немає в наявності
В кошику  од. на суму  грн.
TLE5014SP16E0002XUMA1 TLE5014SP16E0002XUMA1 Infineon Technologies Infineon-TLE5014SP16%20E0002-DataSheet-v01_01-EN.pdf?fileId=5546d4626eab8fbf016ed1115f552acc Description: GMR-BASED ANGLE SENSOR
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Wheatstone Bridge
Operating Temperature: -40°C ~ 125°C (TA)
Termination Style: Gull Wing
Voltage - Supply: 3V ~ 5.5V
Actuator Type: External Magnet, Not Included
Technology: Magnetoresistive
For Measuring: Angle
Supplier Device Package: PG-TDSO-16-1
Rotation Angle - Electrical, Mechanical: 0° ~ 360°, Continuous
Output Signal: Cosine, Sine
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 59 шт:
термін постачання 21-31 дні (днів)
2+251.07 грн
5+216.40 грн
10+206.77 грн
25+183.42 грн
50+176.14 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
BSC0403NSATMA1 BSC0403NSATMA1 Infineon Technologies Infineon-BSC0403NS-DataSheet-v02_01-EN.pdf?fileId=5546d462700c0ae6017015dda00a2215 Description: 150V, N-CH MOSFET, LOGIC LEVEL,
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Supplier Device Package: PG-TDSON-8-7
Vgs(th) (Max) @ Id: 4.6V @ 91µA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 35A, 10
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику  од. на суму  грн.
XDPS21071XUMA1 XDPS21071XUMA1 Infineon Technologies Infineon-XDPS21071-DataSheet-v01_00-EN.pdf?fileId=5546d4626e41e490016e632b3d382b14 Description: DIGITAL FFR CONTROLLER, DSO12
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Up/Step-Down
Operating Temperature: -25°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 24.9kHz ~ 139.4kHz
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 3.3V
Supplier Device Package: PG-DSO-12-20
Synchronous Rectifier: No
Control Features: Current Limit, Soft Start
Output Phases: 1
Clock Sync: No
Number of Outputs: 1
товару немає в наявності
В кошику  од. на суму  грн.
REF_XDPS21071_45W1 REF_XDPS21071_45W1 Infineon Technologies Infineon-referencedesign_REF_XDPS21071_45W1-ApplicationNotes-v01_00-EN.pdf?fileId=5546d4626f229553016f9f594a4d19ee&redirId=121668 Description: 45W USB-PD 3.0 TYPE C CHARGER
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
IPAN70R360P7SAUMA1 Infineon Technologies Infineon-IPAN70R360P7S-DS-v02_01-EN.pdf?fileId=5546d4625acbae4c015ad1977e2820c3 Description: 700V, N-CH MOSFET, TO220 FULLPAK
товару немає в наявності
В кошику  од. на суму  грн.
IMZA65R048M1HXKSA1 IMZA65R048M1HXKSA1 Infineon Technologies Infineon-IMZA65R048M1H-DataSheet-v02_00-EN.pdf?fileId=5546d4626f229553016f85d9ac090535 Description: MOSFET 650V NCH SIC TRENCH
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
Rds On (Max) @ Id, Vgs: 64mOhm @ 20.1A, 18V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 6mA
Supplier Device Package: PG-TO247-4-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1118 pF @ 400 V
на замовлення 34 шт:
термін постачання 21-31 дні (днів)
1+794.28 грн
30+451.01 грн
В кошику  од. на суму  грн.
IPAN60R360PFD7SXKSA1 IPAN60R360PFD7SXKSA1 Infineon Technologies Infineon-IPAN60R360PFD7S-DataSheet-v02_01-EN.pdf?fileId=5546d4626df6ee62016e225ddfd96741 Description: MOSFET N-CH 650V 10A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 2.9A, 10V
Power Dissipation (Max): 23W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 140µA
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 12.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 534 pF @ 400 V
на замовлення 506 шт:
термін постачання 21-31 дні (днів)
3+117.79 грн
50+54.10 грн
100+48.31 грн
500+35.81 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
IMW65R048M1HXKSA1 IMW65R048M1HXKSA1 Infineon Technologies Infineon-IMW65R048M1H-DataSheet-v02_00-EN.pdf?fileId=5546d4626f229553016f85b4a66c0466 Description: MOSFET 650V NCH SIC TRENCH
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
Rds On (Max) @ Id, Vgs: 64mOhm @ 20.1A, 18V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 6mA
Supplier Device Package: PG-TO247-3-41
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1118 pF @ 400 V
на замовлення 220 шт:
термін постачання 21-31 дні (днів)
1+833.80 грн
30+475.36 грн
120+403.43 грн
В кошику  од. на суму  грн.
IPS60R600PFD7SAKMA1 IPS60R600PFD7SAKMA1 Infineon Technologies Infineon-IPS60R600PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626df6ee62016e2294e27e6797 Description: MOSFET N-CH 650V 6A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 1.7A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 80µA
Supplier Device Package: PG-TO251-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 344 pF @ 400 V
товару немає в наявності
 Мінімальне замовлення: 1500 шт
В кошику  од. на суму  грн.
IPD60R280PFD7SAUMA1 IPD60R280PFD7SAUMA1 Infineon Technologies Infineon-IPD60R280PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626df6ee62016e22702a14674d Description: MOSFET N-CH 600V 12A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 3.6A, 10V
Power Dissipation (Max): 51W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 180µA
Supplier Device Package: PG-TO252-3-344
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 656 pF @ 400 V
товару немає в наявності
 Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
IMW65R107M1HXKSA1 IMW65R107M1HXKSA1 Infineon Technologies Infineon-IMW65R107M1H-DataSheet-v02_00-EN.pdf?fileId=5546d4626f229553016f85d01cd50485 Description: MOSFET 650V NCH SIC TRENCH
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 142mOhm @ 8.9A, 18V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 3mA
Supplier Device Package: PG-TO247-3-41
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 496 pF @ 400 V
на замовлення 106 шт:
термін постачання 21-31 дні (днів)
1+414.58 грн
30+228.21 грн
В кошику  од. на суму  грн.
IPS60R1K0PFD7SAKMA1 IPS60R1K0PFD7SAKMA1 Infineon Technologies Infineon-IPS60R1K0PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626df6ee62016e2282a4c8675c Description: MOSFET N-CH 650V 4.7A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 1A, 10V
Power Dissipation (Max): 26W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: PG-TO251-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 400 V
товару немає в наявності
 Мінімальне замовлення: 1500 шт
В кошику  од. на суму  грн.
IMZA65R072M1HXKSA1 IMZA65R072M1HXKSA1 Infineon Technologies Infineon-IMZA65R072M1H-DataSheet-v02_00-EN.pdf?fileId=5546d4626f229553016f85e97cf305b9 Description: MOSFET 650V NCH SIC TRENCH
Input Capacitance (Ciss) (Max) @ Vds: 744 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 18 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +23V, -5V
Drive Voltage (Max Rds On, Min Rds On): 18V
Part Status: Active
Supplier Device Package: PG-TO247-4-3
Vgs(th) (Max) @ Id: 5.7V @ 4mA
Power Dissipation (Max): 96W (Tc)
Rds On (Max) @ Id, Vgs: 94mOhm @ 13.3A, 18V
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Packaging: Tube
на замовлення 169 шт:
термін постачання 21-31 дні (днів)
1+556.38 грн
30+308.48 грн
120+261.47 грн
В кошику  од. на суму  грн.
IMW65R027M1HXKSA1 IMW65R027M1HXKSA1 Infineon Technologies Infineon-IMW65R027M1H-DataSheet-v02_00-EN.pdf?fileId=5546d4626f229553016f85ab88170463 Description: MOSFET 650V NCH SIC TRENCH
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 38.3A, 18V
Power Dissipation (Max): 189W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 11mA
Supplier Device Package: PG-TO247-3-41
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2131 pF @ 400 V
на замовлення 480 шт:
термін постачання 21-31 дні (днів)
1+1113.54 грн
30+651.09 грн
120+558.79 грн
В кошику  од. на суму  грн.
IPAN60R125PFD7SXKSA1 IPAN60R125PFD7SXKSA1 Infineon Technologies Infineon-IPAN60R125PFD7S-DataSheet-v02_01-EN.pdf?fileId=5546d4626df6ee62016e224bf53a667c Description: MOSFET N-CH 650V 25A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 7.8A, 10V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 390µA
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1503 pF @ 400 V
на замовлення 6993 шт:
термін постачання 21-31 дні (днів)
2+226.27 грн
50+109.19 грн
100+98.59 грн
500+75.08 грн
1000+69.48 грн
2000+64.77 грн
5000+59.03 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IPP60R022S7XKSA1 IPP60R022S7XKSA1 Infineon Technologies Infineon-IPP60R022S7-DataSheet-v02_01-EN.pdf?fileId=5546d4626bb628d7016bc25d1085779d Description: MOSFET N-CH 600V 23A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 23A, 12V
Power Dissipation (Max): 390W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.44mA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 5639 pF @ 300 V
на замовлення 1204 шт:
термін постачання 21-31 дні (днів)
1+680.37 грн
50+365.82 грн
100+337.99 грн
500+297.54 грн
В кошику  од. на суму  грн.
IPD60R360PFD7SAUMA1 IPD60R360PFD7SAUMA1 Infineon Technologies Infineon-IPD60R360PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626df6ee62016e227958cc6750 Description: MOSFET N-CH 600V 10A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 2.9A, 10V
Power Dissipation (Max): 43W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 140µA
Supplier Device Package: PG-TO252-3-344
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 534 pF @ 400 V
товару немає в наявності
 Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
IPN60R2K0PFD7SATMA1 IPN60R2K0PFD7SATMA1 Infineon Technologies Infineon-IPN60R2K0PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626df6ee62016e22827e126756 Description: MOSFET N-CH 600V 3A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-3
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V
Power Dissipation (Max): 6W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 30µA
Supplier Device Package: PG-SOT223-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 3.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 134 pF @ 400 V
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
3000+14.31 грн
6000+12.68 грн
9000+12.12 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
IPS60R360PFD7SAKMA1 IPS60R360PFD7SAKMA1 Infineon Technologies Infineon-IPS60R360PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626df6ee62016e2294ceeb6794 Description: MOSFET N-CH 650V 10A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 2.9A, 10V
Power Dissipation (Max): 43W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 140µA
Supplier Device Package: PG-TO251-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 12.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 534 pF @ 400 V
товару немає в наявності
 Мінімальне замовлення: 1500 шт
В кошику  од. на суму  грн.
IPN60R360PFD7SATMA1 IPN60R360PFD7SATMA1 Infineon Technologies Infineon-IPN60R360PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626df6ee62016e228292226759 Description: MOSFET N-CH 600V 10A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-3
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 2.9A, 10V
Power Dissipation (Max): 7W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 140µA
Supplier Device Package: PG-SOT223-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 534 pF @ 400 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+29.31 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
IMZA65R107M1HXKSA1 IMZA65R107M1HXKSA1 Infineon Technologies Infineon-IMZA65R107M1H-DataSheet-v02_00-EN.pdf?fileId=5546d4626f229553016f859930890460 Description: MOSFET 650V NCH SIC TRENCH
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 142mOhm @ 8.9A, 18V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 3mA
Supplier Device Package: PG-TO247-3-41
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 496 pF @ 400 V
на замовлення 48 шт:
термін постачання 21-31 дні (днів)
1+575.76 грн
30+319.68 грн
В кошику  од. на суму  грн.
IPS60R210PFD7SAKMA1 IPS60R210PFD7SAKMA1 Infineon Technologies Infineon-IPS60R210PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626df6ee62016e228bcd866791 Description: MOSFET N-CH 650V 16A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 4.9A, 10V
Power Dissipation (Max): 64W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 240µA
Supplier Device Package: PG-TO251-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1015 pF @ 400 V
товару немає в наявності
 Мінімальне замовлення: 1500 шт
В кошику  од. на суму  грн.
IPT60R065S7XTMA1 IPT60R065S7XTMA1 Infineon Technologies Infineon-IPT60R065S7-DataSheet-v02_01-EN.pdf?fileId=5546d4626bb628d7016bc253e7b6779a Description: MOSFET N-CH 600V 8A 8HSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 8A, 12V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 490µA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 1932 pF @ 300 V
товару немає в наявності
 Мінімальне замовлення: 2000 шт
В кошику  од. на суму  грн.
IMZA65R027M1HXKSA1 IMZA65R027M1HXKSA1 Infineon Technologies Infineon-IMZA65R027M1H-DataSheet-v02_00-EN.pdf?fileId=5546d4626f229553016f85d997f90532 Description: MOSFET 650V NCH SIC TRENCH
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 38.3A, 18V
Power Dissipation (Max): 189W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 11mA
Supplier Device Package: PG-TO247-4-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2131 pF @ 400 V
на замовлення 274 шт:
термін постачання 21-31 дні (днів)
1+1139.11 грн
30+667.41 грн
120+573.29 грн
В кошику  од. на суму  грн.
IPN60R360PFD7SATMA1 IPN60R360PFD7SATMA1 Infineon Technologies Infineon-IPN60R360PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626df6ee62016e228292226759 Description: MOSFET N-CH 600V 10A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-3
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 2.9A, 10V
Power Dissipation (Max): 7W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 140µA
Supplier Device Package: PG-SOT223-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 534 pF @ 400 V
на замовлення 5635 шт:
термін постачання 21-31 дні (днів)
3+110.81 грн
10+67.38 грн
100+44.91 грн
500+33.10 грн
1000+30.19 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
IPD60R360PFD7SAUMA1 IPD60R360PFD7SAUMA1 Infineon Technologies Infineon-IPD60R360PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626df6ee62016e227958cc6750 Description: MOSFET N-CH 600V 10A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 2.9A, 10V
Power Dissipation (Max): 43W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 140µA
Supplier Device Package: PG-TO252-3-344
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 534 pF @ 400 V
на замовлення 1008 шт:
термін постачання 21-31 дні (днів)
3+115.46 грн
10+70.44 грн
100+47.11 грн
500+34.80 грн
1000+31.77 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
IPT60R065S7XTMA1 IPT60R065S7XTMA1 Infineon Technologies Infineon-IPT60R065S7-DataSheet-v02_01-EN.pdf?fileId=5546d4626bb628d7016bc253e7b6779a Description: MOSFET N-CH 600V 8A 8HSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 8A, 12V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 490µA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 1932 pF @ 300 V
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IPD60R280PFD7SAUMA1 IPD60R280PFD7SAUMA1 Infineon Technologies Infineon-IPD60R280PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626df6ee62016e22702a14674d Description: MOSFET N-CH 600V 12A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 3.6A, 10V
Power Dissipation (Max): 51W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 180µA
Supplier Device Package: PG-TO252-3-344
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 656 pF @ 400 V
на замовлення 2634 шт:
термін постачання 21-31 дні (днів)
3+125.54 грн
10+76.86 грн
100+51.75 грн
500+38.48 грн
1000+35.70 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
IPN60R2K0PFD7SATMA1 IPN60R2K0PFD7SATMA1 Infineon Technologies Infineon-IPN60R2K0PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626df6ee62016e22827e126756 Description: MOSFET N-CH 600V 3A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-3
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V
Power Dissipation (Max): 6W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 30µA
Supplier Device Package: PG-SOT223-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 3.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 134 pF @ 400 V
на замовлення 13562 шт:
термін постачання 21-31 дні (днів)
5+67.42 грн
10+40.22 грн
100+26.14 грн
500+18.83 грн
1000+17.00 грн
Мінімальне замовлення: 5 шт
В кошику  од. на суму  грн.
FR900R12IP4DBPSA1 FR900R12IP4DBPSA1 Infineon Technologies Infineon-FR900R12IP4D-DataSheet-v03_00-EN.pdf?fileId=5546d4626c1f3dc3016cae709c2a37eb Description: IGBT MODULE PP IHM I XHP 1 7KV
Input Capacitance (Cies) @ Vce: 54 nF @ 25 V
Current - Collector Cutoff (Max): 5 mA
Power - Max: 20 mW
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 900 A
Part Status: Active
IGBT Type: Trench Field Stop
Supplier Device Package: AG-PRIME3-1
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 900A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Dual Brake Chopper
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
1+81821.73 грн
В кошику  од. на суму  грн.
IDK20G120C5XTMA1 IDK20G120C5XTMA1 Infineon Technologies Infineon-IDK20G120C5-DataSheet-v02_01-EN.pdf?fileId=5546d4626df6ee62016e3bf103270f47 Description: DIODE SIC 1.2KV 56A PGTO26321
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1050pF @ 1V, 1MHz
Current - Average Rectified (Io): 56A
Supplier Device Package: PG-TO263-2-1
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A
Current - Reverse Leakage @ Vr: 123 µA @ 1200 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
1000+244.82 грн
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
SIGC61T60NCX7SA1
SIGC61T60NCX7SA1
Виробник: Infineon Technologies
Description: IGBT 3 CHIP 600V WAFER
Current - Collector Pulsed (Icm): 225 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 75 A
Test Condition: 300V, 75A, 3Ohm, 15V
Td (on/off) @ 25°C: 65ns/170ns
IGBT Type: NPT
Supplier Device Package: Die
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 75A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
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SIDC14D60E6X1SA3 SIDC14D60E6_ed1_7-1-02.pdf
Виробник: Infineon Technologies
Description: DIODE STANDARD 600V 30A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: Die
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 30 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
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SIDC06D60E6X1SA4 SIDC06D60E6_ed1_3-12-01.pdf
Виробник: Infineon Technologies
Description: DIODE STANDARD 600V 10A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: Die
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 10 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
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SIDC04D60F6X1SA2 SIDC04D60F6_ed2.1_9-3-10.pdf
Виробник: Infineon Technologies
Description: DIODE STANDARD 600V 9A DIE
Packaging: Bulk
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 9 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: Die
Current - Average Rectified (Io): 9A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: Die
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SIDC14D60C8X1SA3 Infineon-SIDC14D60C8_L4024M-DS-v01_02-en.pdf?fileId=db3a30433c8a9179013c8ff64902577e
Виробник: Infineon Technologies
Description: DIODE GEN PURP 600V 50A DIE
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 50 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: Die
Current - Average Rectified (Io): 50A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
товару немає в наявності
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SIDC14D60F6X1SA3 SIDC14D60F6_ed2.1_9-3-10.pdf
Виробник: Infineon Technologies
Description: DIODE STANDARD 600V 45A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 45A
Supplier Device Package: Die
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 45 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
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SIDC26D60C8X1SA1 Infineon-SIDC26D60C8_L4028M-DS-v01_02-en.pdf?fileId=db3a30433c8a9179013c9039e2405834
SIDC26D60C8X1SA1
Виробник: Infineon Technologies
Description: DIODE STANDARD 600V 100A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 100A
Supplier Device Package: Die
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 100 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 100
Voltage Coupled to Current - Reverse Leakage @ Vr: 600
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SIDC08D60C8X1SA1 Infineon-SIDC08D60C8_L4022M-DS-v01_02-en.pdf?fileId=db3a30433c8a9179013c8feff14c5770
Виробник: Infineon Technologies
Description: DIODE GEN PURP 600V 30A DIE
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: Die
Current - Average Rectified (Io): 30A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
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SIDC04D60F6X1SA4 SIDC04D60F6_ed2.1_9-3-10.pdf
Виробник: Infineon Technologies
Description: DIODE STANDARD 600V 9A DIE
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 9 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: Die
Current - Average Rectified (Io): 9A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
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SIGC25T60NCX7SA1
Виробник: Infineon Technologies
Description: IGBT 3 CHIP 600V WAFER
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SIDC14D60F6X1SA1 SIDC14D60F6_ed2.1_9-3-10.pdf
Виробник: Infineon Technologies
Description: DIODE STANDARD 600V 45A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 45A
Supplier Device Package: Die
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 45 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
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SIGC81T60SNCX7SA1
SIGC81T60SNCX7SA1
Виробник: Infineon Technologies
Description: IGBT 3 CHIP 600V WAFER
Current - Collector Pulsed (Icm): 300 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 100 A
Part Status: Obsolete
Test Condition: 400V, 100A, 3.3Ohm, 15V
Td (on/off) @ 25°C: 65ns/450ns
IGBT Type: NPT
Supplier Device Package: Die
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 100A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
товару немає в наявності
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SIDC14D60C8X1SA2 Infineon-SIDC14D60C8_L4024M-DS-v01_02-en.pdf?fileId=db3a30433c8a9179013c8ff64902577e
SIDC14D60C8X1SA2
Виробник: Infineon Technologies
Description: DIODE STANDARD 600V 50A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 50A
Supplier Device Package: Die
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 50 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
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REFICL5102HVU150WTOBO1 Infineon-Referencedesign_REF-ICL-5102HV-U150W-ApplicationNotes-v01_00-EN.pdf?fileId=5546d4626eab8fbf016eac0dac4f0023
REFICL5102HVU150WTOBO1
Виробник: Infineon Technologies
Description: EVAL BOARD FOR ICL5102HV
Contents: Board(s)
Part Status: Active
Outputs and Type: 1 Non-Isolated Output
Current - Output / Channel: 3A
Voltage - Input: 277 ~ 528 VAC
Voltage - Output: 17V ~ 48V
Packaging: Box
Supplied Contents: Board(s)
Utilized IC / Part: ICL5102HV
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FS380R12A6T4BBPSA1 Infineon-FS380R12A6T4B-DataSheet-v03_01-EN.pdf?fileId=5546d4626da6c043016db9e750e268b1
FS380R12A6T4BBPSA1
Виробник: Infineon Technologies
Description: IGBT MODULE 1200V 380A
Input Capacitance (Cies) @ Vce: 19 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Current - Collector (Ic) (Max): 380 A
Part Status: Active
IGBT Type: Trench Field Stop
Supplier Device Package: AG-HYBRIDD-2
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 250A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Three Phase Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Power - Max: 870 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
на замовлення 6 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+45030.66 грн
В кошику  од. на суму  грн.
TLE92108232QXXUMA1 Infineon-TLE92108-232QX-DataSheet-v01_00-EN.pdf?fileId=5546d462749a7c2d01749b3138d607ed
TLE92108232QXXUMA1
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 48VFQFN
Supplier Device Package: PG-VQFN-48-31
High Side Voltage - Max (Bootstrap): 950 V
Input Type: Non-Inverting
Voltage - Supply: 6V ~ 28V
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Part Status: Active
Current - Peak Output (Source, Sink): 100mA, 100mA
Gate Type: IGBT, MOSFET (N-Channel)
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Synchronous
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
FS950R08A6P2BBPSA1 Infineon-FS950R08A6P2B-DataSheet-v03_00-EN.pdf?fileId=5546d4626da6c043016db9e7586868b4
FS950R08A6P2BBPSA1
Виробник: Infineon Technologies
Description: IGBT MOD 750V 950A AG-HYBRIDD-2
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 450A
NTC Thermistor: Yes
Supplier Device Package: AG-HYBRIDD-2
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 950 A
Voltage - Collector Emitter Breakdown (Max): 750 V
Power - Max: 870 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 80 nF @ 50 V
на замовлення 12 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+22369.26 грн
12+20590.47 грн
В кошику  од. на суму  грн.
TLS715B0TSNPBOARDTOBO1
TLS715B0TSNPBOARDTOBO1
Виробник: Infineon Technologies
Description: EVAL TLS715B0NAV50 LDO
Channels per IC: 1 - Single
Supplied Contents: Board(s)
Utilized IC / Part: TLS715B0NAV50
Board Type: Fully Populated
Regulator Type: Positive Fixed
Current - Output: 150mA
Voltage - Input: 4V ~ 40V
Voltage - Output: 5V
Packaging: Box
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+2004.69 грн
В кошику  од. на суму  грн.
TLE9210823QXAPPKITTOBO1 TLE92108-23QX_APPKIT_Web.pdf
TLE9210823QXAPPKITTOBO1
Виробник: Infineon Technologies
Description: EVAL MOSFET DRVR TLE92018 MOTIX
Part Status: Active
Supplied Contents: Board(s)
Utilized IC / Part: TLE9210823
Type: Power Management
Function: Gate Driver
Packaging: Box
на замовлення 8 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+3890.04 грн
В кошику  од. на суму  грн.
EVALM5E1B1245NSICTOBO1 Infineon-EVAL-M5-E1B1245N-SiC-ApplicationNotes-v01_00-EN.pdf?fileId=5546d4626cb27db2016d438785217e27
EVALM5E1B1245NSICTOBO1
Виробник: Infineon Technologies
Description: EVAL COOLSIC MOSFET MOTOR DRIVER
Supplied Contents: Board(s)
Utilized IC / Part: 1EDI20H12AH
Type: Power Management
Function: Gate Driver
Packaging: Box
Contents: Board(s)
товару немає в наявності
В кошику  од. на суму  грн.
TLE92108231QXXUMA1 Infineon-TLE92108-231QX-DataSheet-v01_00-EN.pdf?fileId=5546d462749a7c2d01749b323e140979
TLE92108231QXXUMA1
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 48VFQFN
Part Status: Active
Current - Peak Output (Source, Sink): 100mA, 100mA
Gate Type: IGBT, N-Channel MOSFET
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Synchronous
Supplier Device Package: PG-VQFN-48-31
High Side Voltage - Max (Bootstrap): 950 V
Input Type: Non-Inverting
Voltage - Supply: 6V ~ 28V
Mounting Type: Surface Mount
DigiKey Programmable: Not Verified
Package / Case: 48-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2500+136.44 грн
5000+128.87 грн
Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
ICL5102HVXUMA1 Infineon-ICL5102HV-DataSheet-v01_02-EN.pdf?fileId=5546d4626c1f3dc3016c70f543a736d6
ICL5102HVXUMA1
Виробник: Infineon Technologies
Description: IC LED DRIVER OFFL NO 19DSO
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width), 19 Leads
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 1.3MHz
Type: AC DC Offline Switcher
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Lighting
Internal Switch(s): No
Topology: Half-Bridge
Supplier Device Package: PG-DSO-19-1
Dimming: No
Voltage - Supply (Min): 8.5V
Voltage - Supply (Max): 18V
Part Status: Active
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1000+130.41 грн
2000+122.54 грн
3000+121.01 грн
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
TLD22522EPXUMA1 Infineon-TLD2252-2EP-DataSheet-v01_00-EN.pdf?fileId=5546d4626da6c043016dba1517ee6995
TLD22522EPXUMA1
Виробник: Infineon Technologies
Description: IC LED DRVR CTRLR PWM 14TSDSO
Grade: Automotive
Voltage - Supply (Max): 18V
Voltage - Supply (Min): 8.5V
Dimming: PWM
Supplier Device Package: PG-TSDSO-14
Topology: Switched Capacitor (Charge Pump)
Internal Switch(s): No
Current - Output / Channel: 120mA
Applications: Lighting
Operating Temperature: -40°C ~ 150°C (TJ)
Type: DC DC Controller
Number of Outputs: 2
Mounting Type: Surface Mount
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
TLD22522EPXUMA1 Infineon-TLD2252-2EP-DataSheet-v01_00-EN.pdf?fileId=5546d4626da6c043016dba1517ee6995
TLD22522EPXUMA1
Виробник: Infineon Technologies
Description: IC LED DRVR CTRLR PWM 14TSDSO
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Packaging: Cut Tape (CT)
Grade: Automotive
Voltage - Supply (Max): 18V
Voltage - Supply (Min): 8.5V
Dimming: PWM
Supplier Device Package: PG-TSDSO-14
Topology: Switched Capacitor (Charge Pump)
Internal Switch(s): No
Current - Output / Channel: 120mA
Applications: Lighting
Operating Temperature: -40°C ~ 150°C (TJ)
Type: DC DC Controller
Number of Outputs: 2
Mounting Type: Surface Mount
на замовлення 2950 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
3+106.94 грн
10+74.92 грн
25+67.96 грн
100+56.60 грн
250+53.17 грн
500+51.10 грн
1000+48.59 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
ICL5102HVXUMA1 Infineon-ICL5102HV-DataSheet-v01_02-EN.pdf?fileId=5546d4626c1f3dc3016c70f543a736d6
ICL5102HVXUMA1
Виробник: Infineon Technologies
Description: IC LED DRIVER OFFL NO 19DSO
Packaging: Cut Tape (CT)
Package / Case: 20-SOIC (0.295", 7.50mm Width), 19 Leads
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 1.3MHz
Type: AC DC Offline Switcher
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Lighting
Internal Switch(s): No
Topology: Half-Bridge
Supplier Device Package: PG-DSO-19-1
Dimming: No
Voltage - Supply (Min): 8.5V
Voltage - Supply (Max): 18V
Part Status: Active
на замовлення 3930 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2+237.12 грн
10+171.11 грн
25+156.88 грн
100+132.56 грн
250+125.55 грн
500+121.33 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IRAUDAMP23 Infineon-IRAUDAMP23-DataSheet-v01_00-EN.pdf?fileId=5546d462677d0f4601679746020259b4
IRAUDAMP23
Виробник: Infineon Technologies
Description: EVAL BOARD FOR IRS2452AM
Amplifier Type: Class D
Output Type: 2-Channel (Stereo)
Packaging: Box
Contents: Board(s)
Part Status: Active
Supplied Contents: Board(s)
Utilized IC / Part: IRS2452AM
Board Type: Fully Populated
Max Output Power x Channels @ Load: 600W x 2 @ 20Ohm
Voltage - Supply: ±80V ~ 160V
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+19750.85 грн
В кошику  од. на суму  грн.
TLE5014SP16E0002XUMA1 Infineon-TLE5014SP16%20E0002-DataSheet-v01_01-EN.pdf?fileId=5546d4626eab8fbf016ed1115f552acc
TLE5014SP16E0002XUMA1
Виробник: Infineon Technologies
Description: GMR-BASED ANGLE SENSOR
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Wheatstone Bridge
Operating Temperature: -40°C ~ 125°C (TA)
Termination Style: Gull Wing
Voltage - Supply: 3V ~ 5.5V
Actuator Type: External Magnet, Not Included
Technology: Magnetoresistive
For Measuring: Angle
Supplier Device Package: PG-TDSO-16-1
Rotation Angle - Electrical, Mechanical: 0° ~ 360°, Continuous
Output Signal: Cosine, Sine
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
TLE5014SP16E0001XUMA1 Infineon-TLE5014SP16%20E0001-DataSheet-v01_01-EN.pdf?fileId=5546d4626eab8fbf016ed1116a022ad0
TLE5014SP16E0001XUMA1
Виробник: Infineon Technologies
Description: GMR-BASED ANGLE SENSOR
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Wheatstone Bridge
Operating Temperature: -40°C ~ 125°C (TA)
Termination Style: Gull Wing
Voltage - Supply: 3V ~ 5.5V
Actuator Type: External Magnet, Not Included
Technology: Magnetoresistive
For Measuring: Angle
Supplier Device Package: PG-TDSO-16-1
Rotation Angle - Electrical, Mechanical: 0° ~ 360°, Continuous
Output Signal: Cosine, Sine
Part Status: Active
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
TLE5014SP16E0001XUMA1 Infineon-TLE5014SP16%20E0001-DataSheet-v01_01-EN.pdf?fileId=5546d4626eab8fbf016ed1116a022ad0
TLE5014SP16E0001XUMA1
Виробник: Infineon Technologies
Description: GMR-BASED ANGLE SENSOR
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Wheatstone Bridge
Operating Temperature: -40°C ~ 125°C (TA)
Termination Style: Gull Wing
Voltage - Supply: 3V ~ 5.5V
Actuator Type: External Magnet, Not Included
Technology: Magnetoresistive
For Measuring: Angle
Supplier Device Package: PG-TDSO-16-1
Rotation Angle - Electrical, Mechanical: 0° ~ 360°, Continuous
Output Signal: Cosine, Sine
Part Status: Active
товару немає в наявності
В кошику  од. на суму  грн.
TLE5014SP16E0002XUMA1 Infineon-TLE5014SP16%20E0002-DataSheet-v01_01-EN.pdf?fileId=5546d4626eab8fbf016ed1115f552acc
TLE5014SP16E0002XUMA1
Виробник: Infineon Technologies
Description: GMR-BASED ANGLE SENSOR
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Wheatstone Bridge
Operating Temperature: -40°C ~ 125°C (TA)
Termination Style: Gull Wing
Voltage - Supply: 3V ~ 5.5V
Actuator Type: External Magnet, Not Included
Technology: Magnetoresistive
For Measuring: Angle
Supplier Device Package: PG-TDSO-16-1
Rotation Angle - Electrical, Mechanical: 0° ~ 360°, Continuous
Output Signal: Cosine, Sine
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 59 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2+251.07 грн
5+216.40 грн
10+206.77 грн
25+183.42 грн
50+176.14 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
BSC0403NSATMA1 Infineon-BSC0403NS-DataSheet-v02_01-EN.pdf?fileId=5546d462700c0ae6017015dda00a2215
BSC0403NSATMA1
Виробник: Infineon Technologies
Description: 150V, N-CH MOSFET, LOGIC LEVEL,
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Supplier Device Package: PG-TDSON-8-7
Vgs(th) (Max) @ Id: 4.6V @ 91µA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 35A, 10
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику  од. на суму  грн.
XDPS21071XUMA1 Infineon-XDPS21071-DataSheet-v01_00-EN.pdf?fileId=5546d4626e41e490016e632b3d382b14
XDPS21071XUMA1
Виробник: Infineon Technologies
Description: DIGITAL FFR CONTROLLER, DSO12
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Up/Step-Down
Operating Temperature: -25°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 24.9kHz ~ 139.4kHz
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 3.3V
Supplier Device Package: PG-DSO-12-20
Synchronous Rectifier: No
Control Features: Current Limit, Soft Start
Output Phases: 1
Clock Sync: No
Number of Outputs: 1
товару немає в наявності
В кошику  од. на суму  грн.
REF_XDPS21071_45W1 Infineon-referencedesign_REF_XDPS21071_45W1-ApplicationNotes-v01_00-EN.pdf?fileId=5546d4626f229553016f9f594a4d19ee&redirId=121668
REF_XDPS21071_45W1
Виробник: Infineon Technologies
Description: 45W USB-PD 3.0 TYPE C CHARGER
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
IPAN70R360P7SAUMA1 Infineon-IPAN70R360P7S-DS-v02_01-EN.pdf?fileId=5546d4625acbae4c015ad1977e2820c3
Виробник: Infineon Technologies
Description: 700V, N-CH MOSFET, TO220 FULLPAK
товару немає в наявності
В кошику  од. на суму  грн.
IMZA65R048M1HXKSA1 Infineon-IMZA65R048M1H-DataSheet-v02_00-EN.pdf?fileId=5546d4626f229553016f85d9ac090535
IMZA65R048M1HXKSA1
Виробник: Infineon Technologies
Description: MOSFET 650V NCH SIC TRENCH
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
Rds On (Max) @ Id, Vgs: 64mOhm @ 20.1A, 18V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 6mA
Supplier Device Package: PG-TO247-4-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1118 pF @ 400 V
на замовлення 34 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+794.28 грн
30+451.01 грн
В кошику  од. на суму  грн.
IPAN60R360PFD7SXKSA1 Infineon-IPAN60R360PFD7S-DataSheet-v02_01-EN.pdf?fileId=5546d4626df6ee62016e225ddfd96741
IPAN60R360PFD7SXKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 10A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 2.9A, 10V
Power Dissipation (Max): 23W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 140µA
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 12.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 534 pF @ 400 V
на замовлення 506 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
3+117.79 грн
50+54.10 грн
100+48.31 грн
500+35.81 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
IMW65R048M1HXKSA1 Infineon-IMW65R048M1H-DataSheet-v02_00-EN.pdf?fileId=5546d4626f229553016f85b4a66c0466
IMW65R048M1HXKSA1
Виробник: Infineon Technologies
Description: MOSFET 650V NCH SIC TRENCH
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
Rds On (Max) @ Id, Vgs: 64mOhm @ 20.1A, 18V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 6mA
Supplier Device Package: PG-TO247-3-41
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1118 pF @ 400 V
на замовлення 220 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+833.80 грн
30+475.36 грн
120+403.43 грн
В кошику  од. на суму  грн.
IPS60R600PFD7SAKMA1 Infineon-IPS60R600PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626df6ee62016e2294e27e6797
IPS60R600PFD7SAKMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 6A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 1.7A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 80µA
Supplier Device Package: PG-TO251-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 344 pF @ 400 V
товару немає в наявності
Мінімальне замовлення: 1500 шт
В кошику  од. на суму  грн.
IPD60R280PFD7SAUMA1 Infineon-IPD60R280PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626df6ee62016e22702a14674d
IPD60R280PFD7SAUMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 12A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 3.6A, 10V
Power Dissipation (Max): 51W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 180µA
Supplier Device Package: PG-TO252-3-344
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 656 pF @ 400 V
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
IMW65R107M1HXKSA1 Infineon-IMW65R107M1H-DataSheet-v02_00-EN.pdf?fileId=5546d4626f229553016f85d01cd50485
IMW65R107M1HXKSA1
Виробник: Infineon Technologies
Description: MOSFET 650V NCH SIC TRENCH
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 142mOhm @ 8.9A, 18V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 3mA
Supplier Device Package: PG-TO247-3-41
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 496 pF @ 400 V
на замовлення 106 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+414.58 грн
30+228.21 грн
В кошику  од. на суму  грн.
IPS60R1K0PFD7SAKMA1 Infineon-IPS60R1K0PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626df6ee62016e2282a4c8675c
IPS60R1K0PFD7SAKMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 4.7A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 1A, 10V
Power Dissipation (Max): 26W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: PG-TO251-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 400 V
товару немає в наявності
Мінімальне замовлення: 1500 шт
В кошику  од. на суму  грн.
IMZA65R072M1HXKSA1 Infineon-IMZA65R072M1H-DataSheet-v02_00-EN.pdf?fileId=5546d4626f229553016f85e97cf305b9
IMZA65R072M1HXKSA1
Виробник: Infineon Technologies
Description: MOSFET 650V NCH SIC TRENCH
Input Capacitance (Ciss) (Max) @ Vds: 744 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 18 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +23V, -5V
Drive Voltage (Max Rds On, Min Rds On): 18V
Part Status: Active
Supplier Device Package: PG-TO247-4-3
Vgs(th) (Max) @ Id: 5.7V @ 4mA
Power Dissipation (Max): 96W (Tc)
Rds On (Max) @ Id, Vgs: 94mOhm @ 13.3A, 18V
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Packaging: Tube
на замовлення 169 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+556.38 грн
30+308.48 грн
120+261.47 грн
В кошику  од. на суму  грн.
IMW65R027M1HXKSA1 Infineon-IMW65R027M1H-DataSheet-v02_00-EN.pdf?fileId=5546d4626f229553016f85ab88170463
IMW65R027M1HXKSA1
Виробник: Infineon Technologies
Description: MOSFET 650V NCH SIC TRENCH
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 38.3A, 18V
Power Dissipation (Max): 189W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 11mA
Supplier Device Package: PG-TO247-3-41
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2131 pF @ 400 V
на замовлення 480 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+1113.54 грн
30+651.09 грн
120+558.79 грн
В кошику  од. на суму  грн.
IPAN60R125PFD7SXKSA1 Infineon-IPAN60R125PFD7S-DataSheet-v02_01-EN.pdf?fileId=5546d4626df6ee62016e224bf53a667c
IPAN60R125PFD7SXKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 25A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 7.8A, 10V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 390µA
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1503 pF @ 400 V
на замовлення 6993 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2+226.27 грн
50+109.19 грн
100+98.59 грн
500+75.08 грн
1000+69.48 грн
2000+64.77 грн
5000+59.03 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IPP60R022S7XKSA1 Infineon-IPP60R022S7-DataSheet-v02_01-EN.pdf?fileId=5546d4626bb628d7016bc25d1085779d
IPP60R022S7XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 23A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 23A, 12V
Power Dissipation (Max): 390W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.44mA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 5639 pF @ 300 V
на замовлення 1204 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+680.37 грн
50+365.82 грн
100+337.99 грн
500+297.54 грн
В кошику  од. на суму  грн.
IPD60R360PFD7SAUMA1 Infineon-IPD60R360PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626df6ee62016e227958cc6750
IPD60R360PFD7SAUMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 10A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 2.9A, 10V
Power Dissipation (Max): 43W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 140µA
Supplier Device Package: PG-TO252-3-344
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 534 pF @ 400 V
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
IPN60R2K0PFD7SATMA1 Infineon-IPN60R2K0PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626df6ee62016e22827e126756
IPN60R2K0PFD7SATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 3A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-3
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V
Power Dissipation (Max): 6W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 30µA
Supplier Device Package: PG-SOT223-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 3.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 134 pF @ 400 V
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
3000+14.31 грн
6000+12.68 грн
9000+12.12 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
IPS60R360PFD7SAKMA1 Infineon-IPS60R360PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626df6ee62016e2294ceeb6794
IPS60R360PFD7SAKMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 10A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 2.9A, 10V
Power Dissipation (Max): 43W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 140µA
Supplier Device Package: PG-TO251-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 12.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 534 pF @ 400 V
товару немає в наявності
Мінімальне замовлення: 1500 шт
В кошику  од. на суму  грн.
IPN60R360PFD7SATMA1 Infineon-IPN60R360PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626df6ee62016e228292226759
IPN60R360PFD7SATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 10A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-3
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 2.9A, 10V
Power Dissipation (Max): 7W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 140µA
Supplier Device Package: PG-SOT223-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 534 pF @ 400 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
3000+29.31 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
IMZA65R107M1HXKSA1 Infineon-IMZA65R107M1H-DataSheet-v02_00-EN.pdf?fileId=5546d4626f229553016f859930890460
IMZA65R107M1HXKSA1
Виробник: Infineon Technologies
Description: MOSFET 650V NCH SIC TRENCH
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 142mOhm @ 8.9A, 18V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 3mA
Supplier Device Package: PG-TO247-3-41
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 496 pF @ 400 V
на замовлення 48 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+575.76 грн
30+319.68 грн
В кошику  од. на суму  грн.
IPS60R210PFD7SAKMA1 Infineon-IPS60R210PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626df6ee62016e228bcd866791
IPS60R210PFD7SAKMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 16A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 4.9A, 10V
Power Dissipation (Max): 64W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 240µA
Supplier Device Package: PG-TO251-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1015 pF @ 400 V
товару немає в наявності
Мінімальне замовлення: 1500 шт
В кошику  од. на суму  грн.
IPT60R065S7XTMA1 Infineon-IPT60R065S7-DataSheet-v02_01-EN.pdf?fileId=5546d4626bb628d7016bc253e7b6779a
IPT60R065S7XTMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 8A 8HSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 8A, 12V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 490µA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 1932 pF @ 300 V
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику  од. на суму  грн.
IMZA65R027M1HXKSA1 Infineon-IMZA65R027M1H-DataSheet-v02_00-EN.pdf?fileId=5546d4626f229553016f85d997f90532
IMZA65R027M1HXKSA1
Виробник: Infineon Technologies
Description: MOSFET 650V NCH SIC TRENCH
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 38.3A, 18V
Power Dissipation (Max): 189W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 11mA
Supplier Device Package: PG-TO247-4-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2131 pF @ 400 V
на замовлення 274 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+1139.11 грн
30+667.41 грн
120+573.29 грн
В кошику  од. на суму  грн.
IPN60R360PFD7SATMA1 Infineon-IPN60R360PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626df6ee62016e228292226759
IPN60R360PFD7SATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 10A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-3
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 2.9A, 10V
Power Dissipation (Max): 7W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 140µA
Supplier Device Package: PG-SOT223-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 534 pF @ 400 V
на замовлення 5635 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
3+110.81 грн
10+67.38 грн
100+44.91 грн
500+33.10 грн
1000+30.19 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
IPD60R360PFD7SAUMA1 Infineon-IPD60R360PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626df6ee62016e227958cc6750
IPD60R360PFD7SAUMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 10A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 2.9A, 10V
Power Dissipation (Max): 43W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 140µA
Supplier Device Package: PG-TO252-3-344
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 534 pF @ 400 V
на замовлення 1008 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
3+115.46 грн
10+70.44 грн
100+47.11 грн
500+34.80 грн
1000+31.77 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
IPT60R065S7XTMA1 Infineon-IPT60R065S7-DataSheet-v02_01-EN.pdf?fileId=5546d4626bb628d7016bc253e7b6779a
IPT60R065S7XTMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 8A 8HSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 8A, 12V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 490µA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 1932 pF @ 300 V
товару немає в наявності
В кошику  од. на суму  грн.
IPD60R280PFD7SAUMA1 Infineon-IPD60R280PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626df6ee62016e22702a14674d
IPD60R280PFD7SAUMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 12A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 3.6A, 10V
Power Dissipation (Max): 51W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 180µA
Supplier Device Package: PG-TO252-3-344
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 656 pF @ 400 V
на замовлення 2634 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
3+125.54 грн
10+76.86 грн
100+51.75 грн
500+38.48 грн
1000+35.70 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
IPN60R2K0PFD7SATMA1 Infineon-IPN60R2K0PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626df6ee62016e22827e126756
IPN60R2K0PFD7SATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 3A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-3
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V
Power Dissipation (Max): 6W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 30µA
Supplier Device Package: PG-SOT223-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 3.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 134 pF @ 400 V
на замовлення 13562 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
5+67.42 грн
10+40.22 грн
100+26.14 грн
500+18.83 грн
1000+17.00 грн
Мінімальне замовлення: 5 шт
В кошику  од. на суму  грн.
FR900R12IP4DBPSA1 Infineon-FR900R12IP4D-DataSheet-v03_00-EN.pdf?fileId=5546d4626c1f3dc3016cae709c2a37eb
FR900R12IP4DBPSA1
Виробник: Infineon Technologies
Description: IGBT MODULE PP IHM I XHP 1 7KV
Input Capacitance (Cies) @ Vce: 54 nF @ 25 V
Current - Collector Cutoff (Max): 5 mA
Power - Max: 20 mW
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 900 A
Part Status: Active
IGBT Type: Trench Field Stop
Supplier Device Package: AG-PRIME3-1
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 900A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Dual Brake Chopper
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+81821.73 грн
В кошику  од. на суму  грн.
IDK20G120C5XTMA1 Infineon-IDK20G120C5-DataSheet-v02_01-EN.pdf?fileId=5546d4626df6ee62016e3bf103270f47
IDK20G120C5XTMA1
Виробник: Infineon Technologies
Description: DIODE SIC 1.2KV 56A PGTO26321
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1050pF @ 1V, 1MHz
Current - Average Rectified (Io): 56A
Supplier Device Package: PG-TO263-2-1
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A
Current - Reverse Leakage @ Vr: 123 µA @ 1200 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1000+244.82 грн
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
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