Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (148828) > Сторінка 348 з 2481

Обрати Сторінку:   [  << Попередня Сторінка ]  1 248 343 344 345 346 347 348 349 350 351 352 353 496 744 992 1240 1488 1736 1984 2232 2480 2481  [ Наступна Сторінка >> ]
Фото Назва Виробник Інформація Доступність
Ціна
SAF-XC886LM-8FFA 5V AC SAF-XC886LM-8FFA 5V AC Infineon Technologies Infineon-XC88XCLM-DS-v01_02-en.pdf?fileId=db3a304412b407950112b40c4a9e0afb Description: IC MCU 8BIT 32KB FLASH 48TQFP
Packaging: Tape & Reel (TR)
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 1.75K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: XC800
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: LINbus, SSI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: PG-TQFP-48
Part Status: Obsolete
Number of I/O: 34
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
IPB60R180P7ATMA1 IPB60R180P7ATMA1 Infineon Technologies Infineon-IPB60R180P7-DS-v02_00-EN.pdf?fileId=5546d4625ee5d4cd015f2a6b8e590481 Description: MOSFET N-CH 600V 18A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 5.6A, 10V
Power Dissipation (Max): 72W (Tc)
Vgs(th) (Max) @ Id: 4V @ 280µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1081 pF @ 400 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
1000+65.50 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
IPB60R180P7ATMA1 IPB60R180P7ATMA1 Infineon Technologies Infineon-IPB60R180P7-DS-v02_00-EN.pdf?fileId=5546d4625ee5d4cd015f2a6b8e590481 Description: MOSFET N-CH 600V 18A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 5.6A, 10V
Power Dissipation (Max): 72W (Tc)
Vgs(th) (Max) @ Id: 4V @ 280µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1081 pF @ 400 V
на замовлення 1112 шт:
термін постачання 21-31 дні (днів)
2+203.65 грн
10+126.89 грн
100+87.37 грн
500+67.19 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
SGW20N60 SGW20N60 Infineon Technologies INFNS14173-1.pdf?t.download=true&u=5oefqw Description: IGBT, 40A I(C), 600V V(BR)CES, N
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 20A
Supplier Device Package: PG-TO247-3-21
IGBT Type: NPT
Td (on/off) @ 25°C: 36ns/225ns
Switching Energy: 440µJ (on), 330µJ (off)
Test Condition: 400V, 20A, 16Ohm, 15V
Gate Charge: 100 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 179 W
на замовлення 5688 шт:
термін постачання 21-31 дні (днів)
112+209.07 грн
Мінімальне замовлення: 112
В кошику  од. на суму  грн.
SPA20N60C3 SPA20N60C3 Infineon Technologies INFN-S-A0004583378-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 600V 20.7A TO220-111
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.7A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 13.1A, 10V
Power Dissipation (Max): 34.5W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Supplier Device Package: PG-TO220-3-111
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
SPA20N60CFD SPA20N60CFD Infineon Technologies Infineon-SPA20N60CFD-DS-v01_04-en.pdf?fileId=db3a304412b407950112b42e4a594998 Description: POWER FIELD-EFFECT TRANSISTOR, 2
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.7A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 13.1A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: PG-TO220-3-313
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
на замовлення 113 шт:
термін постачання 21-31 дні (днів)
111+245.74 грн
Мінімальне замовлення: 111
В кошику  од. на суму  грн.
IRGP50B60PD1PBF-INF IRGP50B60PD1PBF-INF Infineon Technologies IRSDS09631-1.pdf?t.download=true&u=5oefqw Description: AUTOMOTIVE WARP2 IGBT ULTRAFAST
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 2.85V @ 15V, 50A
Supplier Device Package: TO-247AC
IGBT Type: NPT
Td (on/off) @ 25°C: 30ns/130ns
Switching Energy: 255µJ (on), 375µJ (off)
Test Condition: 390V, 33A, 3.3Ohm, 15V
Gate Charge: 205 nC
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 390 W
товару немає в наявності
В кошику  од. на суму  грн.
KITA2GTC3973V3TFTTOBO1 KITA2GTC3973V3TFTTOBO1 Infineon Technologies Infineon-ApplicationKitManual_TC3X7-UM-v02_00-EN.pdf?fileId=5546d462696dbf120169b454383c483d Description: AURIX TC397 3.3V TFT EVAL BRD
Packaging: Bulk
Function: USB to UART (RS232) Bridge
Type: MCU 32-Bit
Utilized IC / Part: TC397
Supplied Contents: Board(s)
Part Status: Active
Mounting Type: Fixed
Contents: Board(s), LCD
Core Processor: TriCore™
Platform: AURIX TC397 3.3V TFT
на замовлення 13 шт:
термін постачання 21-31 дні (днів)
1+19377.32 грн
В кошику  од. на суму  грн.
KITA2GTC3873V3TFTTOBO1 KITA2GTC3873V3TFTTOBO1 Infineon Technologies Infineon-ApplicationKitManual_TC3X7-UM-v02_00-EN.pdf?fileId=5546d462696dbf120169b454383c483d Description: AURIX TC387 3.3V TFT EVAL BRD
Packaging: Bulk
Function: USB to UART (RS232) Bridge
Type: MCU 32-Bit
Utilized IC / Part: TC387
Supplied Contents: Board(s)
Part Status: Active
Mounting Type: Fixed
Contents: Board(s), LCD
Core Processor: TriCore™
Platform: AURIX TC387 3.3V TFT
на замовлення 90 шт:
термін постачання 21-31 дні (днів)
1+22396.95 грн
В кошику  од. на суму  грн.
KITA2GTC3975VTFTTOBO1 KITA2GTC3975VTFTTOBO1 Infineon Technologies Infineon-ApplicationKitManual_TC3X7-UM-v02_00-EN.pdf?fileId=5546d462696dbf120169b454383c483d Description: AURIX TC397 5V TFT EVAL BRD
Packaging: Bulk
Function: USB to UART (RS232) Bridge
Type: MCU 32-Bit
Utilized IC / Part: TC397
Supplied Contents: Board(s)
Part Status: Active
Mounting Type: Fixed
Contents: Board(s), LCD
Core Processor: TriCore™
Platform: AURIX TC397 5V TFT
на замовлення 42 шт:
термін постачання 21-31 дні (днів)
1+19377.32 грн
В кошику  од. на суму  грн.
BTS3080EJXUMA1 BTS3080EJXUMA1 Infineon Technologies Infineon-BTS3080EJ-DS-v01_00-EN.pdf?fileId=5546d462576f34750157bea1d11343f9 Description: IC PWR SWITCH N-CHAN 1:1 TDSO-8
Packaging: Cut Tape (CT)
Features: Auto Restart
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 80mOhm
Input Type: Non-Inverting
Voltage - Load: 31V (Max)
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Current - Output (Max): 10A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TDSO-8-31
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Active
на замовлення 2995 шт:
термін постачання 21-31 дні (днів)
5+71.88 грн
10+50.18 грн
25+45.25 грн
100+37.43 грн
250+35.02 грн
500+33.56 грн
1000+31.84 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
BTS3080TFATMA1 BTS3080TFATMA1 Infineon Technologies Infineon-BTS3080TF-DS-v01_00-EN.pdf?fileId=5546d4625a888733015a8a3f64ee3f44 Description: IC PWR SWITCH N-CHAN 1:1 TO252-3
Packaging: Tape & Reel (TR)
Features: Auto Restart
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 69mOhm
Input Type: Non-Inverting
Voltage - Load: 40V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO252-3
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Active
товару немає в наявності
В кошику  од. на суму  грн.
BTS3080TFATMA1 BTS3080TFATMA1 Infineon Technologies Infineon-BTS3080TF-DS-v01_00-EN.pdf?fileId=5546d4625a888733015a8a3f64ee3f44 Description: IC PWR SWITCH N-CHAN 1:1 TO252-3
Packaging: Cut Tape (CT)
Features: Auto Restart
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 69mOhm
Input Type: Non-Inverting
Voltage - Load: 40V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO252-3
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Active
на замовлення 2030 шт:
термін постачання 21-31 дні (днів)
4+86.42 грн
10+60.56 грн
25+54.84 грн
100+45.49 грн
250+42.66 грн
500+40.94 грн
1000+38.88 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
BTS3035TFATMA1 BTS3035TFATMA1 Infineon Technologies Infineon-BTS3035TF-DS-v01_00-EN.pdf?fileId=5546d4625a888733015a8a51932d3f5d Description: IC PWR SWITCH N-CHAN 1:1 TO252-3
Packaging: Tape & Reel (TR)
Features: Auto Restart
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 30mOhm
Input Type: Non-Inverting
Voltage - Load: 40V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO252-3-313
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Active
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+50.47 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
BTS3035TFATMA1 BTS3035TFATMA1 Infineon Technologies Infineon-BTS3035TF-DS-v01_00-EN.pdf?fileId=5546d4625a888733015a8a51932d3f5d Description: IC PWR SWITCH N-CHAN 1:1 TO252-3
Packaging: Cut Tape (CT)
Features: Auto Restart
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 30mOhm
Input Type: Non-Inverting
Voltage - Load: 40V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO252-3-313
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Active
на замовлення 3087 шт:
термін постачання 21-31 дні (днів)
4+102.68 грн
10+71.93 грн
25+65.19 грн
100+54.26 грн
250+50.96 грн
500+48.97 грн
1000+46.56 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
BTS3011TEDEMOBOARDTOBO1 BTS3011TEDEMOBOARDTOBO1 Infineon Technologies Infineon-Demoboard_Description_BTS3XXXEJ-UM-v01_00-EN.pdf?fileId=5546d462584d1d4a0158cf40d2dc031a Description: BTS3011TE DEMOBOARD
Packaging: Bulk
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTS3011TE
Platform: Arduino
Part Status: Active
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
1+9658.71 грн
В кошику  од. на суму  грн.
BTS3080TFDEMOBOARDTOBO1 BTS3080TFDEMOBOARDTOBO1 Infineon Technologies Infineon-Demoboard_Description_BTS3XXXTF-UM-v01_00-EN.pdf?fileId=5546d462584d1d4a0158cf40e2420320 Description: BTS3080TF DEMOBOARD
Packaging: Box
Function: Automotive
Supplied Contents: Board(s)
Part Status: Active
Contents: Board(s)
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
1+3157.39 грн
В кошику  од. на суму  грн.
BTS3035TFDEMOBOARDTOBO1 BTS3035TFDEMOBOARDTOBO1 Infineon Technologies Infineon-Demoboard_Description_BTS3XXXTF-UM-v01_00-EN.pdf?fileId=5546d462584d1d4a0158cf40e2420320 Description: BTS3035TF DEMOBOARD
Packaging: Box
Function: Automotive
Supplied Contents: Board(s)
Part Status: Active
Contents: Board(s)
на замовлення 6 шт:
термін постачання 21-31 дні (днів)
1+2849.35 грн
В кошику  од. на суму  грн.
BTS308 E3059 BTS308 E3059 Infineon Technologies BTS308.pdf Description: IC PWR SWITCH N-CHAN 1:1 TO220-5
Packaging: Tube
Features: Auto Restart
Package / Case: TO-220-5 Formed Leads
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 270mOhm
Input Type: Non-Inverting
Voltage - Load: 4.7V ~ 34V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.18A
Ratio - Input:Output: 1:1
Supplier Device Package: P-TO220-5-3
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
товару немає в наявності
В кошику  од. на суму  грн.
SPS01N60C3BKMA1 SPS01N60C3BKMA1 Infineon Technologies SPS01N60C3.pdf?t.download=true&u=5oefqw Description: 0.8A, 600V, N-CHANNEL MOSFET, T
Packaging: Bulk
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
Rds On (Max) @ Id, Vgs: 6Ohm @ 500mA, 10V
Power Dissipation (Max): 11W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: PG-TO251-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 25 V
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)
575+37.66 грн
Мінімальне замовлення: 575
В кошику  од. на суму  грн.
SPA11N60C3 SPA11N60C3 Infineon Technologies INFN-S-A0004269590-1.pdf?t.download=true&u=5oefqw Description: POWER FIELD-EFFECT TRANSISTOR, 1
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 7A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 500µA
Supplier Device Package: PG-TO220-3-111
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
AUXHAF2805STRR Infineon Technologies Description: IC DISCRETE
товару немає в наявності
В кошику  од. на суму  грн.
CY62148ELL-55SXI CY62148ELL-55SXI Infineon Technologies Infineon-CY62148E_MoBL_4-Mbit_(512_K_8)_Static_RAM-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebeea5a32e0&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC SRAM 4MBIT PARALLEL 32SOIC
Packaging: Tube
Package / Case: 32-SOIC (0.445", 11.30mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-SOIC
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
на замовлення 1775 шт:
термін постачання 21-31 дні (днів)
1+384.19 грн
10+344.83 грн
25+334.57 грн
50+306.66 грн
100+299.33 грн
250+289.72 грн
500+277.89 грн
1000+270.91 грн
В кошику  од. на суму  грн.
TC1796256F180EXBEKDUMA1 Infineon Technologies Infineon-SAK-TC1796-256F150E%20BE-DS-v01_00-EN.pdf?fileId=5546d46249a28d750149a34e1f28045d Description: 32-BIT RISC FLASH MCU
Packaging: Bulk
Package / Case: 416-BBGA
Mounting Type: Surface Mount
Speed: 180MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: TriCore™
Data Converters: A/D 44x8/10/12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.42V ~ 1.58V
Connectivity: ASC, CANbus, EBI/EMI, MLI, MSC, SPI, SSC, UART/USART
Peripherals: DMA, POR, WDT
Supplier Device Package: 416-PBGA (27x27)
Part Status: Active
Number of I/O: 123
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
SAK-TC1796-256F150EXBE SAK-TC1796-256F150EXBE Infineon Technologies INFNS13200-1.pdf?t.download=true&u=5oefqw Description: 32-BIT RISC FLASH MCU
Packaging: Bulk
Package / Case: 416-BBGA
Mounting Type: Surface Mount
Speed: 150MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: TriCore™
Data Converters: A/D 44x8/10/12b SAR
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.375V ~ 3.47V
Connectivity: ASC, CANbus, EBI/EMI, MLI, MSC, SPI, SSC, UART/USART
Peripherals: DMA, POR, WDT
Supplier Device Package: 416-PBGA (27x27)
Part Status: Active
Number of I/O: 123
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
SAKTC1796256F180EXBEKDUMA1 Infineon Technologies INFNS13200-1.pdf?t.download=true&u=5oefqw Description: 32-BIT RISC FLASH MCU
Packaging: Bulk
Part Status: Active
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
SAKTC1796256F150EXBEKXUMA1 Infineon Technologies INFNS13200-1.pdf?t.download=true&u=5oefqw Description: 32-BIT RISC FLASH MCU
Packaging: Bulk
Part Status: Active
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
SAK-TC1796-256F150E BE Infineon Technologies INFNS13200-1.pdf?t.download=true&u=5oefqw Description: IC MCU 32BIT 2MB FLASH 416BGA
Packaging: Bulk
Package / Case: 416-BGA
Mounting Type: Surface Mount
Speed: 150MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: TriCore™
Data Converters: A/D 44x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.42V ~ 1.58V
Connectivity: ASC, CANbus, EBI/EMI, MLI, MSC, SSC
Peripherals: DMA, POR, WDT
Supplier Device Package: PG-BGA-416
Part Status: Active
Number of I/O: 123
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
SAKTC1796256F150EBEKDUMA1 SAKTC1796256F150EBEKDUMA1 Infineon Technologies INFNS13200-1.pdf?t.download=true&u=5oefqw Description: 32-BIT RISC FLASH MCU
Packaging: Bulk
Package / Case: 416-BBGA
Mounting Type: Surface Mount
Speed: 150MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: TriCore™
Data Converters: A/D 44x8/10/12b SAR
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3.13V ~ 3.47V
Connectivity: ASC, CANbus, EBI/EMI, MLI, MSC, SPI, SSC, UART/USART
Peripherals: DMA, POR, WDT
Supplier Device Package: 416-PBGA (27x27)
Part Status: Active
Number of I/O: 123
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
SAKTC1796256F150EBEKXUMA1 SAKTC1796256F150EBEKXUMA1 Infineon Technologies INFNS13200-1.pdf?t.download=true&u=5oefqw Description: 32-BIT RISC FLASH MCU
Packaging: Bulk
Part Status: Active
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
TC1796256F150EBEKXUMA1 TC1796256F150EBEKXUMA1 Infineon Technologies INFNS13200-1.pdf?t.download=true&u=5oefqw Description: 32-BIT RISC FLASH MCU
Packaging: Bulk
Package / Case: 416-BBGA
Mounting Type: Surface Mount
Speed: 150MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: TriCore™
Data Converters: A/D 44x8/10/12b SAR
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3.13V ~ 3.47V
Connectivity: ASC, CANbus, EBI/EMI, MLI, MSC, SPI, SSC, UART/USART
Peripherals: DMA, POR, WDT
Supplier Device Package: 416-PBGA (27x27)
Part Status: Active
Number of I/O: 123
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
SAK-TC1796-256F150EBC SAK-TC1796-256F150EBC Infineon Technologies INFNS13200-1.pdf?t.download=true&u=5oefqw Description: 32-BIT RISC FLASH MCU
Packaging: Bulk
Part Status: Active
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
SAK-TC1796-256F150EBE SAK-TC1796-256F150EBE Infineon Technologies INFNS13200-1.pdf?t.download=true&u=5oefqw Description: IC MCU 32BIT 2MB FLASH 416PBGA
Packaging: Bulk
Package / Case: 416-BBGA
Mounting Type: Surface Mount
Speed: 150MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: TriCore™
Data Converters: A/D 44x12b SAR
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.42V ~ 1.58V
Connectivity: ASC, CANbus, EBI/EMI, MLI, MSC, SSC
Peripherals: DMA, POR, WDT
Supplier Device Package: 416-PBGA (27x27)
Part Status: Active
Number of I/O: 123
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
IPD65R650CEAUMA1 IPD65R650CEAUMA1 Infineon Technologies Infineon-IPD65R650CE-DS-v02_00-EN.pdf?fileId=5546d4624d6fc3d5014d7220d45a1844 Description: MOSFET N-CH 650V 7A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 2.1A, 10V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 210µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
IPD65R650CEAUMA1 IPD65R650CEAUMA1 Infineon Technologies Infineon-IPD65R650CE-DS-v02_00-EN.pdf?fileId=5546d4624d6fc3d5014d7220d45a1844 Description: MOSFET N-CH 650V 7A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 2.1A, 10V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 210µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
на замовлення 414 шт:
термін постачання 21-31 дні (днів)
4+100.97 грн
10+57.76 грн
100+40.28 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IRGP50B60PDPBF-INF IRGP50B60PDPBF-INF Infineon Technologies IRSDS10533-1.pdf?t.download=true&u=5oefqw Description: AUTOMOTIVE WARP2 IGBT ULTRAFAST
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 50 ns
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 33A
Supplier Device Package: TO-247AC
IGBT Type: NPT
Td (on/off) @ 25°C: 34ns/130ns
Switching Energy: 360µJ (on), 380µJ (off)
Test Condition: 390V, 33A, 3.3Ohm, 15V
Gate Charge: 240 nC
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 370 W
товару немає в наявності
В кошику  од. на суму  грн.
IRG4BC30KDPBF-INF IRG4BC30KDPBF-INF Infineon Technologies IRSDS10999-1.pdf?t.download=true&u=5oefqw Description: IGBT, 28A I(C), 600V V(BR)CES, N
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 16A
Supplier Device Package: TO-220AB
Td (on/off) @ 25°C: 60ns/160ns
Switching Energy: 600µJ (on), 580µJ (off)
Test Condition: 480V, 16A, 23Ohm, 15V
Gate Charge: 67 nC
Part Status: Active
Current - Collector (Ic) (Max): 28 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 56 A
Power - Max: 100 W
товару немає в наявності
В кошику  од. на суму  грн.
ESD242B1W01005E6327XTSA1 ESD242B1W01005E6327XTSA1 Infineon Technologies Infineon-ESD242-B1-W01005-DS-v01_00-EN.pdf?fileId=5546d4625cc9456a015cf395286e60e9 Description: TVS DIODE 3.3VWM 6V P/PGWLL22
Packaging: Tape & Reel (TR)
Package / Case: 01005 (0402 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C
Applications: General Purpose
Capacitance @ Frequency: 6pF @ 1GHz
Current - Peak Pulse (10/1000µs): 4.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V
Supplier Device Package: P/PG-WLL-2-2
Bidirectional Channels: 1
Voltage - Clamping (Max) @ Ipp: 6V
Power - Peak Pulse: 25W
Power Line Protection: No
Part Status: Active
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)
15000+1.17 грн
Мінімальне замовлення: 15000
В кошику  од. на суму  грн.
ESD242B1W01005E6327XTSA1 ESD242B1W01005E6327XTSA1 Infineon Technologies Infineon-ESD242-B1-W01005-DS-v01_00-EN.pdf?fileId=5546d4625cc9456a015cf395286e60e9 Description: TVS DIODE 3.3VWM 6V P/PGWLL22
Packaging: Cut Tape (CT)
Package / Case: 01005 (0402 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C
Applications: General Purpose
Capacitance @ Frequency: 6pF @ 1GHz
Current - Peak Pulse (10/1000µs): 4.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V
Supplier Device Package: P/PG-WLL-2-2
Bidirectional Channels: 1
Voltage - Clamping (Max) @ Ipp: 6V
Power - Peak Pulse: 25W
Power Line Protection: No
Part Status: Active
на замовлення 53609 шт:
термін постачання 21-31 дні (днів)
45+7.70 грн
65+5.11 грн
161+2.05 грн
500+1.86 грн
1000+1.79 грн
2000+1.76 грн
5000+1.70 грн
Мінімальне замовлення: 45
В кошику  од. на суму  грн.
AUIRF9Z34N-INF AUIRF9Z34N-INF Infineon Technologies IRSDS11744-1.pdf?t.download=true&u=5oefqw Description: AUTOMOTIVE HEXFET P CHANNEL
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1317 шт:
термін постачання 21-31 дні (днів)
264+81.62 грн
Мінімальне замовлення: 264
В кошику  од. на суму  грн.
BSS159NL6906 BSS159NL6906 Infineon Technologies INFNS09639-1.pdf?t.download=true&u=5oefqw Description: SMALL SIGNAL N-CHANNEL MOSFET
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 230mA (Ta)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 160mA, 10V
FET Feature: Depletion Mode
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 26µA
Supplier Device Package: PG-SOT23-3-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 39 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IPW60R230P6FKSA1 IPW60R230P6FKSA1 Infineon Technologies Infineon-IPX60R230P6-DS-v02_02-EN.pdf?fileId=db3a3043414fd3ef01415f8ab7321ec1 Description: MOSFET N-CH 600V 16.8A TO247-3
на замовлення 896 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
IPW60R250CP IPW60R250CP Infineon Technologies IPW60R250CP_rev2%5B1%5D.2_PCN.pdf?folderId=db3a30431ff98815012019af55de3f2c&fileId=db3a304320896aa201208b38102a008d Description: MOSFET N-CH 650V 12A TO247-3
на замовлення 10800 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
IPW60R250CPFKSA1 IPW60R250CPFKSA1 Infineon Technologies INFNS17429-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
товару немає в наявності
В кошику  од. на суму  грн.
IRG4PSC71UDPBF-INF Infineon Technologies IRSDS17594-1.pdf?t.download=true&u=5oefqw Description: ULTRAFAST COPACK IGBT W/ULTRAFAS
Packaging: Bulk
Package / Case: TO-274AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 82 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 60A
Supplier Device Package: SUPER-247 (TO-274AA)
Td (on/off) @ 25°C: 90ns/245ns
Switching Energy: 3.26mJ (on), 2.27mJ (off)
Test Condition: 480V, 60A, 5Ohm, 15V
Gate Charge: 340 nC
Part Status: Active
Current - Collector (Ic) (Max): 85 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 350 W
товару немає в наявності
В кошику  од. на суму  грн.
IDP09E120XKSA1 IDP09E120XKSA1 Infineon Technologies INFNS14026-1.pdf?t.download=true&u=5oefqw Description: DIODE STD 1200V 23A PGTO22021
Packaging: Bulk
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 140 ns
Technology: Standard
Current - Average Rectified (Io): 23A
Supplier Device Package: PG-TO220-2-1
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.15 V @ 9 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
на замовлення 5305 шт:
термін постачання 21-31 дні (днів)
244+90.90 грн
Мінімальне замовлення: 244
В кошику  од. на суму  грн.
BFR92PE6530 Infineon Technologies Description: RF LOW-NOISE SI TRANSISTOR
Packaging: Bulk
Part Status: Active
товару немає в наявності
В кошику  од. на суму  грн.
BFR92PE6530HTSA1 Infineon Technologies Description: RF LOW-NOISE SI TRANSISTOR
Packaging: Bulk
Part Status: Active
на замовлення 218968 шт:
термін постачання 21-31 дні (днів)
2358+9.43 грн
Мінімальне замовлення: 2358
В кошику  од. на суму  грн.
IRG4PH40UD-EPBF-INF IRG4PH40UD-EPBF-INF Infineon Technologies IRSDD00021-1203.pdf?t.download=true&u=5oefqw Description: ULTRAFAST COPACK IGBT W/ULTRAFAS
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 63 ns
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 21A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 46ns/97ns
Switching Energy: 1.8mJ (on), 1.93mJ (off)
Test Condition: 800V, 21A, 10Ohm, 15V
Gate Charge: 86 nC
Part Status: Active
Current - Collector (Ic) (Max): 41 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 82 A
Power - Max: 160 W
товару немає в наявності
В кошику  од. на суму  грн.
IRLR3802TRPBF-INF IRLR3802TRPBF-INF Infineon Technologies irlr3802pbf.pdf?fileId=5546d462533600a40153566d742526b5 Description: IRLR3802 - HEXFET POWER MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 84A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 15A, 4.5V
Power Dissipation (Max): 88W (Tc)
Vgs(th) (Max) @ Id: 1.9V @ 250µA
Supplier Device Package: D-Pak
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2490 pF @ 6 V
товару немає в наявності
В кошику  од. на суму  грн.
ICE3B0565J ICE3B0565J Infineon Technologies Description: OFF-LINE SMPS CURRENT MODE CONTR
Packaging: Bulk
Part Status: Active
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
ICE3B0565JG Infineon Technologies INFN-S-A0003615022-1.pdf?t.download=true&u=5oefqw Description: IC OFFLINE SWITCH FLYBACK 12DSO
Packaging: Bulk
Package / Case: 12-BSOP (0.295", 7.50mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -25°C ~ 130°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 67kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10.3V ~ 26V
Supplier Device Package: PG-DSO-12
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Control Features: Soft Start
Part Status: Active
на замовлення 4655 шт:
термін постачання 21-31 дні (днів)
244+95.95 грн
Мінімальне замовлення: 244
В кошику  од. на суму  грн.
TDA4863GXUMA2 TDA4863GXUMA2 Infineon Technologies Infineon-TDA4863-DS-v02_00-en.pdf?fileId=db3a304412b407950112b427d2d23ce8 Description: IC PFC CTRLR DCM 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 12.5V ~ 20V
Mode: Discontinuous Conduction (DCM)
Supplier Device Package: PG-DSO-8-3
Part Status: Obsolete
Current - Startup: 20 µA
товару немає в наявності
В кошику  од. на суму  грн.
IRFC7314B Infineon Technologies IRF7314PbF_10-7-04.pdf Description: MOSFET P-CH 20V 5.3A 8-SOIC
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Vgs (Max): ±12V
товару немає в наявності
В кошику  од. на суму  грн.
IKW03N120H2FKSA1 IKW03N120H2FKSA1 Infineon Technologies IK%28P%2CW%2903N120H2.pdf Description: IGBT 1200V 9.6A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 3A
Supplier Device Package: PG-TO247-3-1
Td (on/off) @ 25°C: 9.2ns/281ns
Switching Energy: 290µJ
Test Condition: 800V, 3A, 82Ohm, 15V
Gate Charge: 22 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 9.6 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 9.9 A
Power - Max: 62.5 W
на замовлення 4098 шт:
термін постачання 21-31 дні (днів)
178+123.97 грн
Мінімальне замовлення: 178
В кошику  од. на суму  грн.
IKP03N120H2 Infineon Technologies INFNS27676-1.pdf?t.download=true&u=5oefqw Description: IGBT, 9.6A, 1200V, N-CHANNEL
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 3A
Supplier Device Package: PG-TO220-3-1
Td (on/off) @ 25°C: 9.2ns/281ns
Switching Energy: 290µJ
Test Condition: 800V, 3A, 82Ohm, 15V
Gate Charge: 22 nC
Part Status: Active
Current - Collector (Ic) (Max): 9.6 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 9.9 A
Power - Max: 62.5 W
товару немає в наявності
В кошику  од. на суму  грн.
IKW03N120H IKW03N120H Infineon Technologies INFNS27676-1.pdf?t.download=true&u=5oefqw Description: IGBT WITH ANTI-PARALLEL DIODE
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 3A
Supplier Device Package: PG-TO247-3-21
Td (on/off) @ 25°C: 9.2ns/281ns
Switching Energy: 140µJ (on), 150µJ (off)
Test Condition: 800V, 3A, 82Ohm, 15V
Gate Charge: 22 nC
Part Status: Active
Current - Collector (Ic) (Max): 9.6 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 9.9 A
Power - Max: 62.5 W
на замовлення 683 шт:
термін постачання 21-31 дні (днів)
226+103.75 грн
Мінімальне замовлення: 226
В кошику  од. на суму  грн.
IGP03N120H2 IGP03N120H2 Infineon Technologies INFNS11544-1.pdf?t.download=true&u=5oefqw Description: IGBT, 9.6A, 1200V, N-CHANNEL
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 3A
Supplier Device Package: PG-TO220-3-1
Td (on/off) @ 25°C: 9.2ns/281ns
Switching Energy: 290µJ
Test Condition: 800V, 3A, 82Ohm, 15V
Gate Charge: 22 nC
Part Status: Active
Current - Collector (Ic) (Max): 9.6 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 9.9 A
Power - Max: 62.5 W
товару немає в наявності
В кошику  од. на суму  грн.
IKW03N120H2 IKW03N120H2 Infineon Technologies INFNS27676-1.pdf?t.download=true&u=5oefqw Description: IGBT WITH ANTI-PARALLEL DIODE
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 3A
Supplier Device Package: PG-TO247-3-1
Td (on/off) @ 25°C: 9.2ns/281ns
Switching Energy: 290µJ
Test Condition: 800V, 3A, 82Ohm, 15V
Gate Charge: 22 nC
Part Status: Active
Current - Collector (Ic) (Max): 9.6 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 9.9 A
Power - Max: 62.5 W
товару немає в наявності
В кошику  од. на суму  грн.
BCR10PNH6730 BCR10PNH6730 Infineon Technologies INFNS17178-1.pdf?t.download=true&u=5oefqw Description: BIPOLAR DIGITAL TRANSISTOR
Packaging: Bulk
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Frequency - Transition: 130MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: PG-SOT363-6-1
Part Status: Active
товару немає в наявності
В кошику  од. на суму  грн.
SAF-XC886LM-8FFA 5V AC Infineon-XC88XCLM-DS-v01_02-en.pdf?fileId=db3a304412b407950112b40c4a9e0afb
SAF-XC886LM-8FFA 5V AC
Виробник: Infineon Technologies
Description: IC MCU 8BIT 32KB FLASH 48TQFP
Packaging: Tape & Reel (TR)
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 1.75K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: XC800
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: LINbus, SSI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: PG-TQFP-48
Part Status: Obsolete
Number of I/O: 34
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
IPB60R180P7ATMA1 Infineon-IPB60R180P7-DS-v02_00-EN.pdf?fileId=5546d4625ee5d4cd015f2a6b8e590481
IPB60R180P7ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 18A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 5.6A, 10V
Power Dissipation (Max): 72W (Tc)
Vgs(th) (Max) @ Id: 4V @ 280µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1081 pF @ 400 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1000+65.50 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
IPB60R180P7ATMA1 Infineon-IPB60R180P7-DS-v02_00-EN.pdf?fileId=5546d4625ee5d4cd015f2a6b8e590481
IPB60R180P7ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 18A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 5.6A, 10V
Power Dissipation (Max): 72W (Tc)
Vgs(th) (Max) @ Id: 4V @ 280µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1081 pF @ 400 V
на замовлення 1112 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+203.65 грн
10+126.89 грн
100+87.37 грн
500+67.19 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
SGW20N60 INFNS14173-1.pdf?t.download=true&u=5oefqw
SGW20N60
Виробник: Infineon Technologies
Description: IGBT, 40A I(C), 600V V(BR)CES, N
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 20A
Supplier Device Package: PG-TO247-3-21
IGBT Type: NPT
Td (on/off) @ 25°C: 36ns/225ns
Switching Energy: 440µJ (on), 330µJ (off)
Test Condition: 400V, 20A, 16Ohm, 15V
Gate Charge: 100 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 179 W
на замовлення 5688 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
112+209.07 грн
Мінімальне замовлення: 112
В кошику  од. на суму  грн.
SPA20N60C3 INFN-S-A0004583378-1.pdf?t.download=true&u=5oefqw
SPA20N60C3
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 20.7A TO220-111
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.7A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 13.1A, 10V
Power Dissipation (Max): 34.5W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Supplier Device Package: PG-TO220-3-111
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
SPA20N60CFD Infineon-SPA20N60CFD-DS-v01_04-en.pdf?fileId=db3a304412b407950112b42e4a594998
SPA20N60CFD
Виробник: Infineon Technologies
Description: POWER FIELD-EFFECT TRANSISTOR, 2
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.7A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 13.1A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: PG-TO220-3-313
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
на замовлення 113 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
111+245.74 грн
Мінімальне замовлення: 111
В кошику  од. на суму  грн.
IRGP50B60PD1PBF-INF IRSDS09631-1.pdf?t.download=true&u=5oefqw
IRGP50B60PD1PBF-INF
Виробник: Infineon Technologies
Description: AUTOMOTIVE WARP2 IGBT ULTRAFAST
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 2.85V @ 15V, 50A
Supplier Device Package: TO-247AC
IGBT Type: NPT
Td (on/off) @ 25°C: 30ns/130ns
Switching Energy: 255µJ (on), 375µJ (off)
Test Condition: 390V, 33A, 3.3Ohm, 15V
Gate Charge: 205 nC
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 390 W
товару немає в наявності
В кошику  од. на суму  грн.
KITA2GTC3973V3TFTTOBO1 Infineon-ApplicationKitManual_TC3X7-UM-v02_00-EN.pdf?fileId=5546d462696dbf120169b454383c483d
KITA2GTC3973V3TFTTOBO1
Виробник: Infineon Technologies
Description: AURIX TC397 3.3V TFT EVAL BRD
Packaging: Bulk
Function: USB to UART (RS232) Bridge
Type: MCU 32-Bit
Utilized IC / Part: TC397
Supplied Contents: Board(s)
Part Status: Active
Mounting Type: Fixed
Contents: Board(s), LCD
Core Processor: TriCore™
Platform: AURIX TC397 3.3V TFT
на замовлення 13 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+19377.32 грн
В кошику  од. на суму  грн.
KITA2GTC3873V3TFTTOBO1 Infineon-ApplicationKitManual_TC3X7-UM-v02_00-EN.pdf?fileId=5546d462696dbf120169b454383c483d
KITA2GTC3873V3TFTTOBO1
Виробник: Infineon Technologies
Description: AURIX TC387 3.3V TFT EVAL BRD
Packaging: Bulk
Function: USB to UART (RS232) Bridge
Type: MCU 32-Bit
Utilized IC / Part: TC387
Supplied Contents: Board(s)
Part Status: Active
Mounting Type: Fixed
Contents: Board(s), LCD
Core Processor: TriCore™
Platform: AURIX TC387 3.3V TFT
на замовлення 90 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+22396.95 грн
В кошику  од. на суму  грн.
KITA2GTC3975VTFTTOBO1 Infineon-ApplicationKitManual_TC3X7-UM-v02_00-EN.pdf?fileId=5546d462696dbf120169b454383c483d
KITA2GTC3975VTFTTOBO1
Виробник: Infineon Technologies
Description: AURIX TC397 5V TFT EVAL BRD
Packaging: Bulk
Function: USB to UART (RS232) Bridge
Type: MCU 32-Bit
Utilized IC / Part: TC397
Supplied Contents: Board(s)
Part Status: Active
Mounting Type: Fixed
Contents: Board(s), LCD
Core Processor: TriCore™
Platform: AURIX TC397 5V TFT
на замовлення 42 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+19377.32 грн
В кошику  од. на суму  грн.
BTS3080EJXUMA1 Infineon-BTS3080EJ-DS-v01_00-EN.pdf?fileId=5546d462576f34750157bea1d11343f9
BTS3080EJXUMA1
Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 TDSO-8
Packaging: Cut Tape (CT)
Features: Auto Restart
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 80mOhm
Input Type: Non-Inverting
Voltage - Load: 31V (Max)
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Current - Output (Max): 10A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TDSO-8-31
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Active
на замовлення 2995 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+71.88 грн
10+50.18 грн
25+45.25 грн
100+37.43 грн
250+35.02 грн
500+33.56 грн
1000+31.84 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
BTS3080TFATMA1 Infineon-BTS3080TF-DS-v01_00-EN.pdf?fileId=5546d4625a888733015a8a3f64ee3f44
BTS3080TFATMA1
Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 TO252-3
Packaging: Tape & Reel (TR)
Features: Auto Restart
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 69mOhm
Input Type: Non-Inverting
Voltage - Load: 40V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO252-3
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Active
товару немає в наявності
В кошику  од. на суму  грн.
BTS3080TFATMA1 Infineon-BTS3080TF-DS-v01_00-EN.pdf?fileId=5546d4625a888733015a8a3f64ee3f44
BTS3080TFATMA1
Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 TO252-3
Packaging: Cut Tape (CT)
Features: Auto Restart
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 69mOhm
Input Type: Non-Inverting
Voltage - Load: 40V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO252-3
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Active
на замовлення 2030 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+86.42 грн
10+60.56 грн
25+54.84 грн
100+45.49 грн
250+42.66 грн
500+40.94 грн
1000+38.88 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
BTS3035TFATMA1 Infineon-BTS3035TF-DS-v01_00-EN.pdf?fileId=5546d4625a888733015a8a51932d3f5d
BTS3035TFATMA1
Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 TO252-3
Packaging: Tape & Reel (TR)
Features: Auto Restart
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 30mOhm
Input Type: Non-Inverting
Voltage - Load: 40V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO252-3-313
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Active
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+50.47 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
BTS3035TFATMA1 Infineon-BTS3035TF-DS-v01_00-EN.pdf?fileId=5546d4625a888733015a8a51932d3f5d
BTS3035TFATMA1
Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 TO252-3
Packaging: Cut Tape (CT)
Features: Auto Restart
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 30mOhm
Input Type: Non-Inverting
Voltage - Load: 40V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO252-3-313
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Active
на замовлення 3087 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+102.68 грн
10+71.93 грн
25+65.19 грн
100+54.26 грн
250+50.96 грн
500+48.97 грн
1000+46.56 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
BTS3011TEDEMOBOARDTOBO1 Infineon-Demoboard_Description_BTS3XXXEJ-UM-v01_00-EN.pdf?fileId=5546d462584d1d4a0158cf40d2dc031a
BTS3011TEDEMOBOARDTOBO1
Виробник: Infineon Technologies
Description: BTS3011TE DEMOBOARD
Packaging: Bulk
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTS3011TE
Platform: Arduino
Part Status: Active
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+9658.71 грн
В кошику  од. на суму  грн.
BTS3080TFDEMOBOARDTOBO1 Infineon-Demoboard_Description_BTS3XXXTF-UM-v01_00-EN.pdf?fileId=5546d462584d1d4a0158cf40e2420320
BTS3080TFDEMOBOARDTOBO1
Виробник: Infineon Technologies
Description: BTS3080TF DEMOBOARD
Packaging: Box
Function: Automotive
Supplied Contents: Board(s)
Part Status: Active
Contents: Board(s)
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+3157.39 грн
В кошику  од. на суму  грн.
BTS3035TFDEMOBOARDTOBO1 Infineon-Demoboard_Description_BTS3XXXTF-UM-v01_00-EN.pdf?fileId=5546d462584d1d4a0158cf40e2420320
BTS3035TFDEMOBOARDTOBO1
Виробник: Infineon Technologies
Description: BTS3035TF DEMOBOARD
Packaging: Box
Function: Automotive
Supplied Contents: Board(s)
Part Status: Active
Contents: Board(s)
на замовлення 6 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2849.35 грн
В кошику  од. на суму  грн.
BTS308 E3059 BTS308.pdf
BTS308 E3059
Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 TO220-5
Packaging: Tube
Features: Auto Restart
Package / Case: TO-220-5 Formed Leads
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 270mOhm
Input Type: Non-Inverting
Voltage - Load: 4.7V ~ 34V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.18A
Ratio - Input:Output: 1:1
Supplier Device Package: P-TO220-5-3
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
товару немає в наявності
В кошику  од. на суму  грн.
SPS01N60C3BKMA1 SPS01N60C3.pdf?t.download=true&u=5oefqw
SPS01N60C3BKMA1
Виробник: Infineon Technologies
Description: 0.8A, 600V, N-CHANNEL MOSFET, T
Packaging: Bulk
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
Rds On (Max) @ Id, Vgs: 6Ohm @ 500mA, 10V
Power Dissipation (Max): 11W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: PG-TO251-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 25 V
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
575+37.66 грн
Мінімальне замовлення: 575
В кошику  од. на суму  грн.
SPA11N60C3 INFN-S-A0004269590-1.pdf?t.download=true&u=5oefqw
SPA11N60C3
Виробник: Infineon Technologies
Description: POWER FIELD-EFFECT TRANSISTOR, 1
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 7A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 500µA
Supplier Device Package: PG-TO220-3-111
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
AUXHAF2805STRR
Виробник: Infineon Technologies
Description: IC DISCRETE
товару немає в наявності
В кошику  од. на суму  грн.
CY62148ELL-55SXI Infineon-CY62148E_MoBL_4-Mbit_(512_K_8)_Static_RAM-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebeea5a32e0&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY62148ELL-55SXI
Виробник: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 32SOIC
Packaging: Tube
Package / Case: 32-SOIC (0.445", 11.30mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-SOIC
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
на замовлення 1775 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+384.19 грн
10+344.83 грн
25+334.57 грн
50+306.66 грн
100+299.33 грн
250+289.72 грн
500+277.89 грн
1000+270.91 грн
В кошику  од. на суму  грн.
TC1796256F180EXBEKDUMA1 Infineon-SAK-TC1796-256F150E%20BE-DS-v01_00-EN.pdf?fileId=5546d46249a28d750149a34e1f28045d
Виробник: Infineon Technologies
Description: 32-BIT RISC FLASH MCU
Packaging: Bulk
Package / Case: 416-BBGA
Mounting Type: Surface Mount
Speed: 180MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: TriCore™
Data Converters: A/D 44x8/10/12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.42V ~ 1.58V
Connectivity: ASC, CANbus, EBI/EMI, MLI, MSC, SPI, SSC, UART/USART
Peripherals: DMA, POR, WDT
Supplier Device Package: 416-PBGA (27x27)
Part Status: Active
Number of I/O: 123
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
SAK-TC1796-256F150EXBE INFNS13200-1.pdf?t.download=true&u=5oefqw
SAK-TC1796-256F150EXBE
Виробник: Infineon Technologies
Description: 32-BIT RISC FLASH MCU
Packaging: Bulk
Package / Case: 416-BBGA
Mounting Type: Surface Mount
Speed: 150MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: TriCore™
Data Converters: A/D 44x8/10/12b SAR
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.375V ~ 3.47V
Connectivity: ASC, CANbus, EBI/EMI, MLI, MSC, SPI, SSC, UART/USART
Peripherals: DMA, POR, WDT
Supplier Device Package: 416-PBGA (27x27)
Part Status: Active
Number of I/O: 123
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
SAKTC1796256F180EXBEKDUMA1 INFNS13200-1.pdf?t.download=true&u=5oefqw
Виробник: Infineon Technologies
Description: 32-BIT RISC FLASH MCU
Packaging: Bulk
Part Status: Active
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
SAKTC1796256F150EXBEKXUMA1 INFNS13200-1.pdf?t.download=true&u=5oefqw
Виробник: Infineon Technologies
Description: 32-BIT RISC FLASH MCU
Packaging: Bulk
Part Status: Active
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
SAK-TC1796-256F150E BE INFNS13200-1.pdf?t.download=true&u=5oefqw
Виробник: Infineon Technologies
Description: IC MCU 32BIT 2MB FLASH 416BGA
Packaging: Bulk
Package / Case: 416-BGA
Mounting Type: Surface Mount
Speed: 150MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: TriCore™
Data Converters: A/D 44x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.42V ~ 1.58V
Connectivity: ASC, CANbus, EBI/EMI, MLI, MSC, SSC
Peripherals: DMA, POR, WDT
Supplier Device Package: PG-BGA-416
Part Status: Active
Number of I/O: 123
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
SAKTC1796256F150EBEKDUMA1 INFNS13200-1.pdf?t.download=true&u=5oefqw
SAKTC1796256F150EBEKDUMA1
Виробник: Infineon Technologies
Description: 32-BIT RISC FLASH MCU
Packaging: Bulk
Package / Case: 416-BBGA
Mounting Type: Surface Mount
Speed: 150MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: TriCore™
Data Converters: A/D 44x8/10/12b SAR
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3.13V ~ 3.47V
Connectivity: ASC, CANbus, EBI/EMI, MLI, MSC, SPI, SSC, UART/USART
Peripherals: DMA, POR, WDT
Supplier Device Package: 416-PBGA (27x27)
Part Status: Active
Number of I/O: 123
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
SAKTC1796256F150EBEKXUMA1 INFNS13200-1.pdf?t.download=true&u=5oefqw
SAKTC1796256F150EBEKXUMA1
Виробник: Infineon Technologies
Description: 32-BIT RISC FLASH MCU
Packaging: Bulk
Part Status: Active
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
TC1796256F150EBEKXUMA1 INFNS13200-1.pdf?t.download=true&u=5oefqw
TC1796256F150EBEKXUMA1
Виробник: Infineon Technologies
Description: 32-BIT RISC FLASH MCU
Packaging: Bulk
Package / Case: 416-BBGA
Mounting Type: Surface Mount
Speed: 150MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: TriCore™
Data Converters: A/D 44x8/10/12b SAR
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3.13V ~ 3.47V
Connectivity: ASC, CANbus, EBI/EMI, MLI, MSC, SPI, SSC, UART/USART
Peripherals: DMA, POR, WDT
Supplier Device Package: 416-PBGA (27x27)
Part Status: Active
Number of I/O: 123
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
SAK-TC1796-256F150EBC INFNS13200-1.pdf?t.download=true&u=5oefqw
SAK-TC1796-256F150EBC
Виробник: Infineon Technologies
Description: 32-BIT RISC FLASH MCU
Packaging: Bulk
Part Status: Active
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
SAK-TC1796-256F150EBE INFNS13200-1.pdf?t.download=true&u=5oefqw
SAK-TC1796-256F150EBE
Виробник: Infineon Technologies
Description: IC MCU 32BIT 2MB FLASH 416PBGA
Packaging: Bulk
Package / Case: 416-BBGA
Mounting Type: Surface Mount
Speed: 150MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: TriCore™
Data Converters: A/D 44x12b SAR
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.42V ~ 1.58V
Connectivity: ASC, CANbus, EBI/EMI, MLI, MSC, SSC
Peripherals: DMA, POR, WDT
Supplier Device Package: 416-PBGA (27x27)
Part Status: Active
Number of I/O: 123
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
IPD65R650CEAUMA1 Infineon-IPD65R650CE-DS-v02_00-EN.pdf?fileId=5546d4624d6fc3d5014d7220d45a1844
IPD65R650CEAUMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 7A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 2.1A, 10V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 210µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
IPD65R650CEAUMA1 Infineon-IPD65R650CE-DS-v02_00-EN.pdf?fileId=5546d4624d6fc3d5014d7220d45a1844
IPD65R650CEAUMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 7A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 2.1A, 10V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 210µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
на замовлення 414 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+100.97 грн
10+57.76 грн
100+40.28 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IRGP50B60PDPBF-INF IRSDS10533-1.pdf?t.download=true&u=5oefqw
IRGP50B60PDPBF-INF
Виробник: Infineon Technologies
Description: AUTOMOTIVE WARP2 IGBT ULTRAFAST
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 50 ns
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 33A
Supplier Device Package: TO-247AC
IGBT Type: NPT
Td (on/off) @ 25°C: 34ns/130ns
Switching Energy: 360µJ (on), 380µJ (off)
Test Condition: 390V, 33A, 3.3Ohm, 15V
Gate Charge: 240 nC
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 370 W
товару немає в наявності
В кошику  од. на суму  грн.
IRG4BC30KDPBF-INF IRSDS10999-1.pdf?t.download=true&u=5oefqw
IRG4BC30KDPBF-INF
Виробник: Infineon Technologies
Description: IGBT, 28A I(C), 600V V(BR)CES, N
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 16A
Supplier Device Package: TO-220AB
Td (on/off) @ 25°C: 60ns/160ns
Switching Energy: 600µJ (on), 580µJ (off)
Test Condition: 480V, 16A, 23Ohm, 15V
Gate Charge: 67 nC
Part Status: Active
Current - Collector (Ic) (Max): 28 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 56 A
Power - Max: 100 W
товару немає в наявності
В кошику  од. на суму  грн.
ESD242B1W01005E6327XTSA1 Infineon-ESD242-B1-W01005-DS-v01_00-EN.pdf?fileId=5546d4625cc9456a015cf395286e60e9
ESD242B1W01005E6327XTSA1
Виробник: Infineon Technologies
Description: TVS DIODE 3.3VWM 6V P/PGWLL22
Packaging: Tape & Reel (TR)
Package / Case: 01005 (0402 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C
Applications: General Purpose
Capacitance @ Frequency: 6pF @ 1GHz
Current - Peak Pulse (10/1000µs): 4.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V
Supplier Device Package: P/PG-WLL-2-2
Bidirectional Channels: 1
Voltage - Clamping (Max) @ Ipp: 6V
Power - Peak Pulse: 25W
Power Line Protection: No
Part Status: Active
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
15000+1.17 грн
Мінімальне замовлення: 15000
В кошику  од. на суму  грн.
ESD242B1W01005E6327XTSA1 Infineon-ESD242-B1-W01005-DS-v01_00-EN.pdf?fileId=5546d4625cc9456a015cf395286e60e9
ESD242B1W01005E6327XTSA1
Виробник: Infineon Technologies
Description: TVS DIODE 3.3VWM 6V P/PGWLL22
Packaging: Cut Tape (CT)
Package / Case: 01005 (0402 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C
Applications: General Purpose
Capacitance @ Frequency: 6pF @ 1GHz
Current - Peak Pulse (10/1000µs): 4.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V
Supplier Device Package: P/PG-WLL-2-2
Bidirectional Channels: 1
Voltage - Clamping (Max) @ Ipp: 6V
Power - Peak Pulse: 25W
Power Line Protection: No
Part Status: Active
на замовлення 53609 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
45+7.70 грн
65+5.11 грн
161+2.05 грн
500+1.86 грн
1000+1.79 грн
2000+1.76 грн
5000+1.70 грн
Мінімальне замовлення: 45
В кошику  од. на суму  грн.
AUIRF9Z34N-INF IRSDS11744-1.pdf?t.download=true&u=5oefqw
AUIRF9Z34N-INF
Виробник: Infineon Technologies
Description: AUTOMOTIVE HEXFET P CHANNEL
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1317 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
264+81.62 грн
Мінімальне замовлення: 264
В кошику  од. на суму  грн.
BSS159NL6906 INFNS09639-1.pdf?t.download=true&u=5oefqw
BSS159NL6906
Виробник: Infineon Technologies
Description: SMALL SIGNAL N-CHANNEL MOSFET
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 230mA (Ta)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 160mA, 10V
FET Feature: Depletion Mode
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 26µA
Supplier Device Package: PG-SOT23-3-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 39 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IPW60R230P6FKSA1 Infineon-IPX60R230P6-DS-v02_02-EN.pdf?fileId=db3a3043414fd3ef01415f8ab7321ec1
IPW60R230P6FKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 16.8A TO247-3
на замовлення 896 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
IPW60R250CP IPW60R250CP_rev2%5B1%5D.2_PCN.pdf?folderId=db3a30431ff98815012019af55de3f2c&fileId=db3a304320896aa201208b38102a008d
IPW60R250CP
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 12A TO247-3
на замовлення 10800 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
IPW60R250CPFKSA1 INFNS17429-1.pdf?t.download=true&u=5oefqw
IPW60R250CPFKSA1
Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
товару немає в наявності
В кошику  од. на суму  грн.
IRG4PSC71UDPBF-INF IRSDS17594-1.pdf?t.download=true&u=5oefqw
Виробник: Infineon Technologies
Description: ULTRAFAST COPACK IGBT W/ULTRAFAS
Packaging: Bulk
Package / Case: TO-274AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 82 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 60A
Supplier Device Package: SUPER-247 (TO-274AA)
Td (on/off) @ 25°C: 90ns/245ns
Switching Energy: 3.26mJ (on), 2.27mJ (off)
Test Condition: 480V, 60A, 5Ohm, 15V
Gate Charge: 340 nC
Part Status: Active
Current - Collector (Ic) (Max): 85 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 350 W
товару немає в наявності
В кошику  од. на суму  грн.
IDP09E120XKSA1 INFNS14026-1.pdf?t.download=true&u=5oefqw
IDP09E120XKSA1
Виробник: Infineon Technologies
Description: DIODE STD 1200V 23A PGTO22021
Packaging: Bulk
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 140 ns
Technology: Standard
Current - Average Rectified (Io): 23A
Supplier Device Package: PG-TO220-2-1
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.15 V @ 9 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
на замовлення 5305 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
244+90.90 грн
Мінімальне замовлення: 244
В кошику  од. на суму  грн.
BFR92PE6530
Виробник: Infineon Technologies
Description: RF LOW-NOISE SI TRANSISTOR
Packaging: Bulk
Part Status: Active
товару немає в наявності
В кошику  од. на суму  грн.
BFR92PE6530HTSA1
Виробник: Infineon Technologies
Description: RF LOW-NOISE SI TRANSISTOR
Packaging: Bulk
Part Status: Active
на замовлення 218968 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2358+9.43 грн
Мінімальне замовлення: 2358
В кошику  од. на суму  грн.
IRG4PH40UD-EPBF-INF IRSDD00021-1203.pdf?t.download=true&u=5oefqw
IRG4PH40UD-EPBF-INF
Виробник: Infineon Technologies
Description: ULTRAFAST COPACK IGBT W/ULTRAFAS
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 63 ns
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 21A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 46ns/97ns
Switching Energy: 1.8mJ (on), 1.93mJ (off)
Test Condition: 800V, 21A, 10Ohm, 15V
Gate Charge: 86 nC
Part Status: Active
Current - Collector (Ic) (Max): 41 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 82 A
Power - Max: 160 W
товару немає в наявності
В кошику  од. на суму  грн.
IRLR3802TRPBF-INF irlr3802pbf.pdf?fileId=5546d462533600a40153566d742526b5
IRLR3802TRPBF-INF
Виробник: Infineon Technologies
Description: IRLR3802 - HEXFET POWER MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 84A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 15A, 4.5V
Power Dissipation (Max): 88W (Tc)
Vgs(th) (Max) @ Id: 1.9V @ 250µA
Supplier Device Package: D-Pak
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2490 pF @ 6 V
товару немає в наявності
В кошику  од. на суму  грн.
ICE3B0565J
ICE3B0565J
Виробник: Infineon Technologies
Description: OFF-LINE SMPS CURRENT MODE CONTR
Packaging: Bulk
Part Status: Active
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
ICE3B0565JG INFN-S-A0003615022-1.pdf?t.download=true&u=5oefqw
Виробник: Infineon Technologies
Description: IC OFFLINE SWITCH FLYBACK 12DSO
Packaging: Bulk
Package / Case: 12-BSOP (0.295", 7.50mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -25°C ~ 130°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 67kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10.3V ~ 26V
Supplier Device Package: PG-DSO-12
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Control Features: Soft Start
Part Status: Active
на замовлення 4655 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
244+95.95 грн
Мінімальне замовлення: 244
В кошику  од. на суму  грн.
TDA4863GXUMA2 Infineon-TDA4863-DS-v02_00-en.pdf?fileId=db3a304412b407950112b427d2d23ce8
TDA4863GXUMA2
Виробник: Infineon Technologies
Description: IC PFC CTRLR DCM 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 12.5V ~ 20V
Mode: Discontinuous Conduction (DCM)
Supplier Device Package: PG-DSO-8-3
Part Status: Obsolete
Current - Startup: 20 µA
товару немає в наявності
В кошику  од. на суму  грн.
IRFC7314B IRF7314PbF_10-7-04.pdf
Виробник: Infineon Technologies
Description: MOSFET P-CH 20V 5.3A 8-SOIC
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Vgs (Max): ±12V
товару немає в наявності
В кошику  од. на суму  грн.
IKW03N120H2FKSA1 IK%28P%2CW%2903N120H2.pdf
IKW03N120H2FKSA1
Виробник: Infineon Technologies
Description: IGBT 1200V 9.6A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 3A
Supplier Device Package: PG-TO247-3-1
Td (on/off) @ 25°C: 9.2ns/281ns
Switching Energy: 290µJ
Test Condition: 800V, 3A, 82Ohm, 15V
Gate Charge: 22 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 9.6 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 9.9 A
Power - Max: 62.5 W
на замовлення 4098 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
178+123.97 грн
Мінімальне замовлення: 178
В кошику  од. на суму  грн.
IKP03N120H2 INFNS27676-1.pdf?t.download=true&u=5oefqw
Виробник: Infineon Technologies
Description: IGBT, 9.6A, 1200V, N-CHANNEL
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 3A
Supplier Device Package: PG-TO220-3-1
Td (on/off) @ 25°C: 9.2ns/281ns
Switching Energy: 290µJ
Test Condition: 800V, 3A, 82Ohm, 15V
Gate Charge: 22 nC
Part Status: Active
Current - Collector (Ic) (Max): 9.6 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 9.9 A
Power - Max: 62.5 W
товару немає в наявності
В кошику  од. на суму  грн.
IKW03N120H INFNS27676-1.pdf?t.download=true&u=5oefqw
IKW03N120H
Виробник: Infineon Technologies
Description: IGBT WITH ANTI-PARALLEL DIODE
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 3A
Supplier Device Package: PG-TO247-3-21
Td (on/off) @ 25°C: 9.2ns/281ns
Switching Energy: 140µJ (on), 150µJ (off)
Test Condition: 800V, 3A, 82Ohm, 15V
Gate Charge: 22 nC
Part Status: Active
Current - Collector (Ic) (Max): 9.6 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 9.9 A
Power - Max: 62.5 W
на замовлення 683 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
226+103.75 грн
Мінімальне замовлення: 226
В кошику  од. на суму  грн.
IGP03N120H2 INFNS11544-1.pdf?t.download=true&u=5oefqw
IGP03N120H2
Виробник: Infineon Technologies
Description: IGBT, 9.6A, 1200V, N-CHANNEL
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 3A
Supplier Device Package: PG-TO220-3-1
Td (on/off) @ 25°C: 9.2ns/281ns
Switching Energy: 290µJ
Test Condition: 800V, 3A, 82Ohm, 15V
Gate Charge: 22 nC
Part Status: Active
Current - Collector (Ic) (Max): 9.6 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 9.9 A
Power - Max: 62.5 W
товару немає в наявності
В кошику  од. на суму  грн.
IKW03N120H2 INFNS27676-1.pdf?t.download=true&u=5oefqw
IKW03N120H2
Виробник: Infineon Technologies
Description: IGBT WITH ANTI-PARALLEL DIODE
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 3A
Supplier Device Package: PG-TO247-3-1
Td (on/off) @ 25°C: 9.2ns/281ns
Switching Energy: 290µJ
Test Condition: 800V, 3A, 82Ohm, 15V
Gate Charge: 22 nC
Part Status: Active
Current - Collector (Ic) (Max): 9.6 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 9.9 A
Power - Max: 62.5 W
товару немає в наявності
В кошику  од. на суму  грн.
BCR10PNH6730 INFNS17178-1.pdf?t.download=true&u=5oefqw
BCR10PNH6730
Виробник: Infineon Technologies
Description: BIPOLAR DIGITAL TRANSISTOR
Packaging: Bulk
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Frequency - Transition: 130MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: PG-SOT363-6-1
Part Status: Active
товару немає в наявності
В кошику  од. на суму  грн.
Обрати Сторінку:   [  << Попередня Сторінка ]  1 248 343 344 345 346 347 348 349 350 351 352 353 496 744 992 1240 1488 1736 1984 2232 2480 2481  [ Наступна Сторінка >> ]