Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (122999) > Сторінка 353 з 2050
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||||
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BFP720FH6327XTSA1 | Infineon Technologies |
Description: RF TRANS NPN 4.7V 45GHZ 4-TSFPPackaging: Cut Tape (CT) Part Status: Active Supplier Device Package: 4-TSFP Noise Figure (dB Typ @ f): 0.4dB ~ 1dB @ 150MHz ~ 10GHz Frequency - Transition: 45GHz DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 13mA, 3V Voltage - Collector Emitter Breakdown (Max): 4.7V Current - Collector (Ic) (Max): 25mA Power - Max: 100mW Gain: 10.5dB ~ 28dB Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: 4-SMD, Flat Leads |
на замовлення 370 шт: термін постачання 21-31 дні (днів) |
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BFN26E6327 | Infineon Technologies |
Description: SMALL SIGNAL BIPOLAR TRANSISTORPower - Max: 360 mW Voltage - Collector Emitter Breakdown (Max): 300 V Current - Collector (Ic) (Max): 200 mA Part Status: Active Supplier Device Package: PG-SOT23-3-3 Frequency - Transition: 70MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 30mA, 10V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Bulk |
товару немає в наявності |
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1ED020I12BTXUMA1 | Infineon Technologies |
Description: DGT ISO 4.5KV 1CH GT DVR DSO16Packaging: Cut Tape (CT) Package / Case: 16-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: Magnetic Coupling Current - Output High, Low: 2A, 2A Voltage - Isolation: 4500Vrms Supplier Device Package: PG-DSO-16-15 Rise / Fall Time (Typ): 30ns, 20ns Part Status: Active Number of Channels: 1 Voltage - Output Supply: 4.5V ~ 5.5V |
товару немає в наявності |
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EVAL1ED020I12B2TOBO1 | Infineon Technologies |
Description: EVAL BOARD FOR 1ED020I12-B2Packaging: Bulk Function: Gate Driver Type: Power Management Contents: Board(s) Utilized IC / Part: 1ED020I12-B2 Supplied Contents: Board(s) Part Status: Active |
на замовлення 3 шт: термін постачання 21-31 дні (днів) |
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BAT6404E6433HTMA1 | Infineon Technologies |
Description: DIODE ARR SCHOTT 40V 250MA SOT23Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 5 ns Technology: Schottky Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 250mA Supplier Device Package: PG-SOT23 Operating Temperature - Junction: 150°C (Max) Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 mA Current - Reverse Leakage @ Vr: 2 µA @ 30 V Qualification: AEC-Q101 |
на замовлення 26026 шт: термін постачання 21-31 дні (днів) |
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CY62167EV18LL-55BVI | Infineon Technologies |
Description: IC SRAM 16MBIT PARALLEL 48VFBGADigiKey Programmable: Not Verified Memory Organization: 1M x 16 Access Time: 55 ns Memory Interface: Parallel Write Cycle Time - Word, Page: 55ns Part Status: Active Supplier Device Package: 48-VFBGA (6x8) Memory Format: SRAM Technology: SRAM - Asynchronous Voltage - Supply: 1.65V ~ 2.25V Operating Temperature: -40°C ~ 85°C (TA) Memory Type: Volatile Memory Size: 16Mbit Mounting Type: Surface Mount Package / Case: 48-VFBGA Packaging: Tray |
на замовлення 7 шт: термін постачання 21-31 дні (днів) |
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CY62167G30-45BVXI | Infineon Technologies |
Description: IC SRAM 16MBIT PARALLEL 48VFBGAPackaging: Tray Package / Case: 48-VFBGA Mounting Type: Surface Mount Memory Size: 16Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.2V ~ 3.6V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 48-VFBGA (6x8) Part Status: Active Write Cycle Time - Word, Page: 45ns Memory Interface: Parallel Access Time: 45 ns Memory Organization: 2M x 8, 1M x 16 DigiKey Programmable: Not Verified |
на замовлення 4733 шт: термін постачання 21-31 дні (днів) |
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IAUS200N08S5N023ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 80V 200A HSOG-8Packaging: Cut Tape (CT) Package / Case: 8-PowerSMD, Gull Wing Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200A (Tc) Rds On (Max) @ Id, Vgs: 2.3mOhm @ 100A, 10V Power Dissipation (Max): 200W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 130µA Supplier Device Package: PG-HSOG-8-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7670 pF @ 40 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 332 шт: термін постачання 21-31 дні (днів) |
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| BCX42E6327 | Infineon Technologies |
Description: SMALL SIGNAL BIPOLAR TRANSISTORPackaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 900mV @ 30mA, 300mA Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 100mA, 1V Frequency - Transition: 150MHz Supplier Device Package: PG-SOT23-3-1 Part Status: Active Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 125 V Power - Max: 330 mW |
товару немає в наявності |
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TLE4241GMXUMA1 | Infineon Technologies |
Description: IC LED DRIVER LINEAR PWM 60MAPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Voltage - Output: 40V Mounting Type: Surface Mount Number of Outputs: 1 Type: Linear Operating Temperature: -40°C ~ 150°C (TJ) Current - Output / Channel: 60mA Internal Switch(s): Yes Dimming: PWM Voltage - Supply (Min): 4V Voltage - Supply (Max): 45V Part Status: Active |
на замовлення 3649 шт: термін постачання 21-31 дні (днів) |
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| TLE8250G REEL | Infineon Technologies |
Description: HIGH SPEED CAN-TRANSCEIVERPackaging: Bulk Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Type: Transceiver Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 4.5V ~ 5.5V Number of Drivers/Receivers: 1/1 Data Rate: 1Mbps Protocol: CANbus Supplier Device Package: PG-DSO-8-16 Receiver Hysteresis: 100 mV Duplex: Half Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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TLE8250GXUMA1 | Infineon Technologies |
Description: IC TRANSCEIVER HALF 1/1 DSO-8 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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TLE8250GXUMA1 | Infineon Technologies |
Description: IC TRANSCEIVER HALF 1/1 DSO-8 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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CY91F526LKBPMC-GSE1 | Infineon Technologies |
Description: IC MCU 32B 1.0625MB FLSH 176LQFPPackaging: Tray Package / Case: 176-LQFP Mounting Type: Surface Mount Speed: 80MHz Program Memory Size: 1.0625MB (1.0625M x 8) RAM Size: 136K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: External Program Memory Type: FLASH EEPROM Size: 64K x 8 Core Processor: FR81S Data Converters: A/D 48x12b SAR; D/A 2x8b R2R Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Connectivity: CANbus, CSIO, EBI/EMI, I²C, LINbus, SPI, UART/USART Peripherals: DMA, LVD, POR, PWM, WDT Supplier Device Package: 176-LQFP (24x24) Part Status: Obsolete Number of I/O: 152 |
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| SAK-XC2232N-40F80LAA | Infineon Technologies |
Description: 16-BIT C166 MMC - XC2200 FAMILY Packaging: Bulk Package / Case: 64-LQFP Exposed Pad Mounting Type: Surface Mount Speed: 40MHz Program Memory Size: 320KB (320K x 8) RAM Size: 42K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: C166SV2 Data Converters: A/D 9x10b Core Size: 16/32-Bit Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V Connectivity: CANbus, EBI/EMI, I²C, LINbus, SPI, SSC, UART/USART, USI Peripherals: I²S, POR, PWM, WDT Supplier Device Package: PG-LQFP-64-6 Part Status: Active Number of I/O: 38 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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SPP03N60C3 | Infineon Technologies |
Description: COOLMOS N-CHANNEL POWER MOSFETPackaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 10V Power Dissipation (Max): 38W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 135µA Supplier Device Package: PG-TO220-3-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V |
на замовлення 81011 шт: термін постачання 21-31 дні (днів) |
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IRF7478TRPBF-1 | Infineon Technologies |
Description: MOSFET N-CH 60V 7A 8SOPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Rds On (Max) @ Id, Vgs: 26mOhm @ 4.2A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1740 pF @ 25 V |
товару немає в наявності |
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AUIRFR9024NTRL | Infineon Technologies |
Description: MOSFET P-CH 55V 11A DPAKPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 175mOhm @ 6.6A, 10V Power Dissipation (Max): 38W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA (DPAK) Grade: Automotive Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BSC112N06LDATMA1 | Infineon Technologies |
Description: MOSFET 2N-CH 60V 20A 8TDSONPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 65W (Tc) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 4020pF @ 30V Rds On (Max) @ Id, Vgs: 11.2mOhm @ 17A, 10V Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.2V @ 28µA Supplier Device Package: PG-TDSON-8-4 Part Status: Active |
на замовлення 25000 шт: термін постачання 21-31 дні (днів) |
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BSC112N06LDATMA1 | Infineon Technologies |
Description: MOSFET 2N-CH 60V 20A 8TDSONPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 65W (Tc) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 4020pF @ 30V Rds On (Max) @ Id, Vgs: 11.2mOhm @ 17A, 10V Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.2V @ 28µA Supplier Device Package: PG-TDSON-8-4 Part Status: Active |
на замовлення 25966 шт: термін постачання 21-31 дні (днів) |
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TLE4729GXUMA1 | Infineon Technologies |
Description: IC MTR DRVR BIPOLAR 5V-16V 24DSOPackaging: Tape & Reel (TR) Package / Case: 24-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 800mA Interface: Parallel Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Half Bridge (4) Voltage - Supply: 5V ~ 16V Applications: General Purpose Technology: Bipolar Voltage - Load: 5V ~ 16V Supplier Device Package: PG-DSO-24-9 Motor Type - Stepper: Bipolar Motor Type - AC, DC: Brushed DC Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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IRL80HS120 | Infineon Technologies |
Description: MOSFET N-CH 80V 12.5A 6PQFNPackaging: Cut Tape (CT) Package / Case: 6-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12.5A (Tc) Rds On (Max) @ Id, Vgs: 32mOhm @ 7.5A, 10V Power Dissipation (Max): 11.5W (Tc) Vgs(th) (Max) @ Id: 2V @ 10µA Supplier Device Package: 6-PQFN (2x2) (DFN2020) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 25 V |
на замовлення 16807 шт: термін постачання 21-31 дні (днів) |
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| BSP317PL6327 | Infineon Technologies |
Description: P-CHANNEL MOSFETPackaging: Bulk Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 430mA (Ta) Rds On (Max) @ Id, Vgs: 4Ohm @ 430mA, 10V Power Dissipation (Max): 1.8W (Ta) Vgs(th) (Max) @ Id: 2V @ 370µA Supplier Device Package: PG-SOT223-4-21 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 15.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 262 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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BSP316PL6327 | Infineon Technologies |
Description: P-CHANNEL MOSFET |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BCR 139L3 E6327 | Infineon Technologies |
Description: TRANS PREBIAS NPN 250MW TSLP-3 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BCR 139T E6327 | Infineon Technologies |
Description: TRANS PREBIAS NPN 250MW SC75Packaging: Tape & Reel (TR) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V Supplier Device Package: PG-SC75-3D Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 250 mW Frequency - Transition: 150 MHz Resistor - Base (R1): 22 kOhms |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| BCX52E6237 | Infineon Technologies |
Description: SMALL SIGNAL BIPOLAR TRANSISTORPackaging: Bulk Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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BCX52E6327 | Infineon Technologies |
Description: SMALL SIGNAL BIPOLAR TRANSISTORPackaging: Bulk Package / Case: TO-243AA Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V Frequency - Transition: 125MHz Supplier Device Package: PG-SOT89-4-2 Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 2 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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TDA4862GGEGXUMA2 | Infineon Technologies |
Description: IC PFC CTRLR DCM 8DSOPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C Voltage - Supply: 11V ~ 19V Mode: Discontinuous Conduction (DCM) Supplier Device Package: PG-DSO-8 Part Status: Obsolete |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||||
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KITAURIXTC277TFTTOBO1 | Infineon Technologies |
Description: AURIX APPLICATION KIT TC277 TFTPackaging: Box Mounting Type: Fixed Type: MCU 32-Bit Contents: Board(s), LCD Core Processor: TriCore™ Utilized IC / Part: TC277 Platform: AURIX |
на замовлення 10 шт: термін постачання 21-31 дні (днів) |
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IRFR3504PBF | Infineon Technologies |
Description: MOSFET N-CH 40V 30A DPAKPackaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 9.2mOhm @ 30A, 10V Power Dissipation (Max): 140W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA (DPAK) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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IRFR3504TRLPBF | Infineon Technologies |
Description: MOSFET N-CH 40V 30A DPAKPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 9.2mOhm @ 30A, 10V Power Dissipation (Max): 140W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA (DPAK) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 25 V |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||||
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IRFR3504TRRPBF | Infineon Technologies |
Description: MOSFET N-CH 40V 30A DPAKPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 9.2mOhm @ 30A, 10V Power Dissipation (Max): 140W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA (DPAK) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 25 V |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||||
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SDT05S60XK | Infineon Technologies |
Description: DIODE SIL CARB 600V 5A TO220-2Packaging: Bulk Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 170pF @ 1V, 1MHz Current - Average Rectified (Io): 5A Supplier Device Package: PG-TO220-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A Current - Reverse Leakage @ Vr: 200 µA @ 600 V |
на замовлення 700 шт: термін постачання 21-31 дні (днів) |
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IPI70N12S311AKSA1 | Infineon Technologies |
Description: MOSFET N-CHANNEL_100+Packaging: Bulk Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 11.6mOhm @ 70A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 4V @ 83µA Supplier Device Package: PG-TO262-3-1 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 120 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4355 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 24000 шт: термін постачання 21-31 дні (днів) |
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KP126N6165 | Infineon Technologies |
Description: SENSOR 23.93PSIA 4.8V DSOF8Termination Style: SMD (SMT) Tab Operating Temperature: -40°C ~ 125°C Accuracy: ±0.145PSI (±1kPa) Pressure Type: Absolute Operating Pressure: 8.7PSI ~ 23.93PSI (60kPa ~ 165kPa) Output: 0.2 V ~ 4.8 V Mounting Type: Surface Mount Output Type: Analog Voltage Package / Case: 8-SMD Module Features: Amplified Output, Temperature Compensated Packaging: Bulk Part Status: Obsolete Port Style: No Port Applications: Board Mount Voltage - Supply: 4.5V ~ 5.5V |
на замовлення 824 шт: термін постачання 21-31 дні (днів) |
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IDDD06G65C6XTMA1 | Infineon Technologies |
Description: DIODE SIC 650V 18A PGHDSOP101Current - Reverse Leakage @ Vr: 20 µA @ 420 V Voltage - DC Reverse (Vr) (Max): 650 V Part Status: Active Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: PG-HDSOP-10-1 Current - Average Rectified (Io): 18A Capacitance @ Vr, F: 302pF @ 1V, 1MHz Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Mounting Type: Surface Mount Package / Case: 10-PowerSOP Module Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 1700 шт В кошику од. на суму грн. | ||||||||||||||||||
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IDK06G65C5XTMA2 | Infineon Technologies |
Description: DIODE SIL CARB 650V 6A PGTO2632Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 1.1 mA @ 650 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 6 A Voltage - DC Reverse (Vr) (Max): 650 V Part Status: Active Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: PG-TO263-2 Current - Average Rectified (Io): 6A Capacitance @ Vr, F: 190pF @ 1V, 1MHz Technology: SiC (Silicon Carbide) Schottky |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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IDK06G65C5XTMA2 | Infineon Technologies |
Description: DIODE SIL CARB 650V 6A PGTO2632Current - Reverse Leakage @ Vr: 1.1 mA @ 650 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 6 A Voltage - DC Reverse (Vr) (Max): 650 V Part Status: Active Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: PG-TO263-2 Current - Average Rectified (Io): 6A Capacitance @ Vr, F: 190pF @ 1V, 1MHz Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) |
на замовлення 3124 шт: термін постачання 21-31 дні (днів) |
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TLE63892GVXUMA2 | Infineon Technologies |
Description: IC REG CTRLR BUCK 14DSOPOperating Temperature: -40°C ~ 150°C (TJ) Function: Step-Down Mounting Type: Surface Mount Output Type: Transistor Driver Package / Case: 14-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) Number of Outputs: 1 Part Status: Last Time Buy Clock Sync: Yes Duty Cycle (Max): 100% Output Phases: 1 Control Features: Current Limit, Enable, Reset Synchronous Rectifier: Yes Supplier Device Package: PG-DSO-14 Voltage - Supply (Vcc/Vdd): 5V ~ 60V Topology: Buck Frequency - Switching: 360kHz Output Configuration: Positive Qualification: AEC-Q100 Grade: Automotive |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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TLS102B0MBHTSA1 | Infineon Technologies |
Description: IC REG LIN POS ADJ 20MA SCT595-5Packaging: Cut Tape (CT) Package / Case: 6-SMD (5 Leads), Gull Wing Output Type: Adjustable Mounting Type: Surface Mount Current - Output: 20mA Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 75 µA Voltage - Input (Max): 40V Number of Regulators: 1 Supplier Device Package: PG-SCT595-5 Voltage - Output (Max): 20V Voltage - Output (Min/Fixed): 2V Control Features: Enable Grade: Automotive Part Status: Active PSRR: 100dB (100Hz) Voltage Dropout (Max): 0.3V @ 20mA Protection Features: Over Temperature, Reverse Polarity, Short Circuit Current - Supply (Max): 1.5 mA Qualification: AEC-Q100 |
на замовлення 5680 шт: термін постачання 21-31 дні (днів) |
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SABC165LMHA | Infineon Technologies |
Description: LEGACY 16-BIT MCUPackaging: Bulk Package / Case: 100-BQFP Mounting Type: Surface Mount Speed: 20MHz RAM Size: 2K x 8 Operating Temperature: 0°C ~ 70°C (TA) Oscillator Type: External, Internal Program Memory Type: ROMless Core Processor: C166 Core Size: 16-Bit Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V Connectivity: ASC, EBI/EMI, SPI, SSC, UART/USART Peripherals: POR, PWM, WDT Supplier Device Package: P-MQFP-100-2 Part Status: Active Number of I/O: 77 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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SABC165LMHATR | Infineon Technologies |
Description: LEGACY 16-BIT MCUPeripherals: POR, PWM, WDT Connectivity: ASC, EBI/EMI, SPI, SSC, UART/USART Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V Core Size: 16-Bit Core Processor: C166 Program Memory Type: ROMless Oscillator Type: External, Internal Operating Temperature: 0°C ~ 70°C (TA) RAM Size: 2K x 8 Speed: 20MHz Mounting Type: Surface Mount Package / Case: 100-BQFP Number of I/O: 77 Part Status: Active Supplier Device Package: P-MQFP-100 Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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SAB-C165-L25F | Infineon Technologies |
Description: LEGACY 16-BIT MCUPackaging: Bulk Number of I/O: 77 Part Status: Active Supplier Device Package: PG-TQFP-100 Peripherals: POR, PWM, WDT Connectivity: ASC, EBI/EMI, SPI, SSC, UART/USART Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V Core Size: 16-Bit Core Processor: C166 Program Memory Type: ROMless Oscillator Type: External, Internal Operating Temperature: 0°C ~ 70°C (TA) RAM Size: 2K x 8 Speed: 25MHz Mounting Type: Surface Mount Package / Case: 100-LQFP DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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SAB-C165-L25FHA | Infineon Technologies |
Description: LEGACY 16-BIT MCUProgram Memory Type: ROMless Oscillator Type: External, Internal Operating Temperature: 0°C ~ 70°C (TA) RAM Size: 2K x 8 Speed: 25MHz Mounting Type: Surface Mount Package / Case: 100-LQFP Packaging: Bulk Number of I/O: 77 Part Status: Active Supplier Device Package: PG-TQFP-100-1 Peripherals: POR, PWM, WDT Connectivity: ASC, EBI/EMI, SPI, SSC, UART/USART Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V Core Size: 16-Bit Core Processor: C166 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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C165L25FHABXUMA1 | Infineon Technologies |
Description: IC MCU 16BIT ROMLESS 100TQFPNumber of I/O: 77 Part Status: Obsolete Supplier Device Package: PG-TQFP-100 Peripherals: POR, PWM, WDT Connectivity: EBI/EMI, SPI, UART/USART Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V Core Size: 16-Bit Core Processor: C166 Program Memory Type: ROMless Oscillator Type: External Operating Temperature: 0°C ~ 70°C (TA) RAM Size: 2K x 8 Speed: 25MHz Mounting Type: Surface Mount Package / Case: 100-LQFP Packaging: Bulk |
на замовлення 100 шт: термін постачання 21-31 дні (днів) |
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SABC165LFHABXUMA1 | Infineon Technologies |
Description: LEGACY 16-BIT MCUPackaging: Bulk Package / Case: 100-LQFP Mounting Type: Surface Mount Speed: 20MHz RAM Size: 2K x 8 Operating Temperature: 0°C ~ 70°C (TA) Oscillator Type: External, Internal Program Memory Type: ROMless Core Processor: C166 Core Size: 16-Bit Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V Connectivity: ASC, EBI/EMI, SPI, SSC, UART/USART Peripherals: POR, PWM, WDT Supplier Device Package: PG-TQFP-100 Part Status: Active Number of I/O: 77 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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SAB-C165LFHABXUMA1 | Infineon Technologies |
Description: LEGACY 16 BIT MICROCONTROLLERPackaging: Bulk Package / Case: 100-LQFP Mounting Type: Surface Mount Speed: 20MHz RAM Size: 2K x 8 Operating Temperature: 0°C ~ 70°C (TA) Oscillator Type: External, Internal Program Memory Type: ROMless Core Processor: C166 Core Size: 16-Bit Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V Connectivity: ASC, EBI/EMI, SPI, SSC, UART/USART Peripherals: POR, PWM, WDT Supplier Device Package: PG-TQFP-100 Part Status: Active Number of I/O: 77 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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SAB-C165LFHABXQMA1 | Infineon Technologies |
Description: LEGACY 16 BIT MICROCONTROLLERPackaging: Bulk Package / Case: 100-LQFP Mounting Type: Surface Mount Speed: 20MHz RAM Size: 2K x 8 Operating Temperature: 0°C ~ 70°C (TA) Oscillator Type: External, Internal Program Memory Type: ROMless Core Processor: C166 Core Size: 16-Bit Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V Connectivity: ASC, EBI/EMI, SPI, SSC, UART/USART Peripherals: POR, PWM, WDT Supplier Device Package: PG-TQFP-100 Part Status: Active Number of I/O: 77 DigiKey Programmable: Not Verified |
на замовлення 103 шт: термін постачання 21-31 дні (днів) |
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SABC165LF3VHABXUMA1 | Infineon Technologies |
Description: LEGACY 16-BIT MCUPackaging: Bulk Package / Case: 100-LQFP Mounting Type: Surface Mount Speed: 20MHz RAM Size: 2K x 8 Operating Temperature: 0°C ~ 70°C (TA) Oscillator Type: External, Internal Program Memory Type: ROMless Core Processor: C166 Core Size: 16-Bit Voltage - Supply (Vcc/Vdd): 3V ~ 3.6V Connectivity: ASC, EBI/EMI, SPI, SSC, UART/USART Peripherals: POR, PWM, WDT Supplier Device Package: PG-TQFP-100 Part Status: Active Number of I/O: 77 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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SAB-C165-LF | Infineon Technologies |
Description: LEGACY 16-BIT MCUPackaging: Bulk Package / Case: 100-LQFP Mounting Type: Surface Mount Speed: 20MHz RAM Size: 2K x 8 Operating Temperature: 0°C ~ 70°C (TA) Oscillator Type: External, Internal Program Memory Type: ROMless Core Processor: C166 Core Size: 16-Bit Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V Connectivity: ASC, EBI/EMI, SPI, SSC, UART/USART Peripherals: POR, PWM, WDT Supplier Device Package: PG-TQFP-100 Part Status: Active Number of I/O: 77 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| SABC165LMHABXQMA1 | Infineon Technologies | Description: LEGACY 16-BIT MCU |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| AUXYBFP3306 | Infineon Technologies |
Description: MOSFET N-CH 60V TO-247AC Packaging: Tube Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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BAS4004E6433HTMA1 | Infineon Technologies |
Description: DIODE ARR SCHOTT 40V 120MA SOT23Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 100 ps Technology: Schottky Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 120mA (DC) Supplier Device Package: PG-SOT23 Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA Current - Reverse Leakage @ Vr: 1 µA @ 30 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BSP92PL6327 | Infineon Technologies |
Description: P-CHANNEL POWER MOSFET |
на замовлення 283295 шт: термін постачання 21-31 дні (днів) |
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BSZ084N08NS5ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 80V 40A TSDSONPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 8.4mOhm @ 20A, 10V Power Dissipation (Max): 63W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 31µA Supplier Device Package: PG-TSDSON-8-FL Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1820 pF @ 40 V |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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BC 817-40 E6433 | Infineon Technologies |
Description: TRANS NPN 45V 0.5A PG-SOT23Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V Frequency - Transition: 170MHz Supplier Device Package: PG-SOT23 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 330 mW |
товару немає в наявності |
Мінімальне замовлення: 40000 шт В кошику од. на суму грн. | ||||||||||||||||||
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CYW20737A1KML2GT | Infineon Technologies |
Description: IC RF TXRX+MCU BLUETOOTH 32VFQFNType: TxRx + MCU Memory Size: 320kB ROM, 60kB RAM Frequency: 2.4GHz Mounting Type: Surface Mount Sensitivity: -94dBm Package / Case: 32-VFQFN Exposed Pad Packaging: Tape & Reel (TR) DigiKey Programmable: Not Verified Serial Interfaces: I2C, SPI, UART RF Family/Standard: Bluetooth Modulation: GFSK GPIO: 14 Supplier Device Package: 32-QFN (5x5) Current - Transmitting: 9.1mA Data Rate (Max): 1Mbps Current - Receiving: 9.8mA Protocol: Bluetooth v4.0 Power - Output: 4dBm Voltage - Supply: 3.8V Operating Temperature: -30°C ~ 85°C |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||||
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BAT15099E6433HTMA1 | Infineon Technologies |
Description: DIODE SCHOTTKY 4V 100MW SOT143-4Packaging: Cut Tape (CT) Package / Case: TO-253-4, TO-253AA Diode Type: Schottky - 2 Independent Operating Temperature: 150°C (TJ) Capacitance @ Vr, F: 0.35pF @ 0V, 1MHz Voltage - Peak Reverse (Max): 4V Supplier Device Package: PG-SOT-143-3D Part Status: Active Current - Max: 110 mA Power Dissipation (Max): 100 mW |
на замовлення 993 шт: термін постачання 21-31 дні (днів) |
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BAR6302LE6327XTMA1 | Infineon Technologies |
Description: RF DIODE PIN 50V 250MW TSLP-2Packaging: Cut Tape (CT) Package / Case: SOD-882 Diode Type: PIN - Single Operating Temperature: 150°C (TJ) Capacitance @ Vr, F: 0.3pF @ 5V, 1MHz Resistance @ If, F: 1Ohm @ 10mA, 100MHz Voltage - Peak Reverse (Max): 50V Supplier Device Package: PG-TSLP-2-1 Part Status: Active Current - Max: 100 mA Power Dissipation (Max): 250 mW |
на замовлення 11000 шт: термін постачання 21-31 дні (днів) |
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| BFP720FH6327XTSA1 |
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Виробник: Infineon Technologies
Description: RF TRANS NPN 4.7V 45GHZ 4-TSFP
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: 4-TSFP
Noise Figure (dB Typ @ f): 0.4dB ~ 1dB @ 150MHz ~ 10GHz
Frequency - Transition: 45GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 13mA, 3V
Voltage - Collector Emitter Breakdown (Max): 4.7V
Current - Collector (Ic) (Max): 25mA
Power - Max: 100mW
Gain: 10.5dB ~ 28dB
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 4-SMD, Flat Leads
Description: RF TRANS NPN 4.7V 45GHZ 4-TSFP
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: 4-TSFP
Noise Figure (dB Typ @ f): 0.4dB ~ 1dB @ 150MHz ~ 10GHz
Frequency - Transition: 45GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 13mA, 3V
Voltage - Collector Emitter Breakdown (Max): 4.7V
Current - Collector (Ic) (Max): 25mA
Power - Max: 100mW
Gain: 10.5dB ~ 28dB
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 4-SMD, Flat Leads
на замовлення 370 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 29.45 грн |
| 16+ | 19.55 грн |
| 25+ | 17.46 грн |
| 100+ | 14.20 грн |
| 250+ | 13.15 грн |
| BFN26E6327 |
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Виробник: Infineon Technologies
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Power - Max: 360 mW
Voltage - Collector Emitter Breakdown (Max): 300 V
Current - Collector (Ic) (Max): 200 mA
Part Status: Active
Supplier Device Package: PG-SOT23-3-3
Frequency - Transition: 70MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 30mA, 10V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Power - Max: 360 mW
Voltage - Collector Emitter Breakdown (Max): 300 V
Current - Collector (Ic) (Max): 200 mA
Part Status: Active
Supplier Device Package: PG-SOT23-3-3
Frequency - Transition: 70MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 30mA, 10V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
товару немає в наявності
В кошику
од. на суму грн.
| 1ED020I12BTXUMA1 |
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Виробник: Infineon Technologies
Description: DGT ISO 4.5KV 1CH GT DVR DSO16
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Magnetic Coupling
Current - Output High, Low: 2A, 2A
Voltage - Isolation: 4500Vrms
Supplier Device Package: PG-DSO-16-15
Rise / Fall Time (Typ): 30ns, 20ns
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 4.5V ~ 5.5V
Description: DGT ISO 4.5KV 1CH GT DVR DSO16
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Magnetic Coupling
Current - Output High, Low: 2A, 2A
Voltage - Isolation: 4500Vrms
Supplier Device Package: PG-DSO-16-15
Rise / Fall Time (Typ): 30ns, 20ns
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 4.5V ~ 5.5V
товару немає в наявності
В кошику
од. на суму грн.
| EVAL1ED020I12B2TOBO1 |
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Виробник: Infineon Technologies
Description: EVAL BOARD FOR 1ED020I12-B2
Packaging: Bulk
Function: Gate Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: 1ED020I12-B2
Supplied Contents: Board(s)
Part Status: Active
Description: EVAL BOARD FOR 1ED020I12-B2
Packaging: Bulk
Function: Gate Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: 1ED020I12-B2
Supplied Contents: Board(s)
Part Status: Active
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 6943.17 грн |
| BAT6404E6433HTMA1 |
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Виробник: Infineon Technologies
Description: DIODE ARR SCHOTT 40V 250MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 250mA
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 30 V
Qualification: AEC-Q101
Description: DIODE ARR SCHOTT 40V 250MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 250mA
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 30 V
Qualification: AEC-Q101
на замовлення 26026 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 22.47 грн |
| 22+ | 13.58 грн |
| 100+ | 8.47 грн |
| 500+ | 5.88 грн |
| 1000+ | 5.20 грн |
| 2000+ | 4.64 грн |
| 5000+ | 3.96 грн |
| CY62167EV18LL-55BVI |
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Виробник: Infineon Technologies
Description: IC SRAM 16MBIT PARALLEL 48VFBGA
DigiKey Programmable: Not Verified
Memory Organization: 1M x 16
Access Time: 55 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 55ns
Part Status: Active
Supplier Device Package: 48-VFBGA (6x8)
Memory Format: SRAM
Technology: SRAM - Asynchronous
Voltage - Supply: 1.65V ~ 2.25V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 16Mbit
Mounting Type: Surface Mount
Package / Case: 48-VFBGA
Packaging: Tray
Description: IC SRAM 16MBIT PARALLEL 48VFBGA
DigiKey Programmable: Not Verified
Memory Organization: 1M x 16
Access Time: 55 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 55ns
Part Status: Active
Supplier Device Package: 48-VFBGA (6x8)
Memory Format: SRAM
Technology: SRAM - Asynchronous
Voltage - Supply: 1.65V ~ 2.25V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 16Mbit
Mounting Type: Surface Mount
Package / Case: 48-VFBGA
Packaging: Tray
на замовлення 7 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 415.35 грн |
| CY62167G30-45BVXI |
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Виробник: Infineon Technologies
Description: IC SRAM 16MBIT PARALLEL 48VFBGA
Packaging: Tray
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Part Status: Active
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 2M x 8, 1M x 16
DigiKey Programmable: Not Verified
Description: IC SRAM 16MBIT PARALLEL 48VFBGA
Packaging: Tray
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Part Status: Active
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 2M x 8, 1M x 16
DigiKey Programmable: Not Verified
на замовлення 4733 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1011.25 грн |
| 10+ | 903.88 грн |
| 25+ | 875.81 грн |
| 50+ | 802.05 грн |
| 100+ | 782.35 грн |
| 480+ | 738.64 грн |
| IAUS200N08S5N023ATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 80V 200A HSOG-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 100A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 130µA
Supplier Device Package: PG-HSOG-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7670 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 80V 200A HSOG-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 100A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 130µA
Supplier Device Package: PG-HSOG-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7670 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 332 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 289.82 грн |
| 10+ | 183.94 грн |
| 100+ | 130.05 грн |
| BCX42E6327 |
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Виробник: Infineon Technologies
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 900mV @ 30mA, 300mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 100mA, 1V
Frequency - Transition: 150MHz
Supplier Device Package: PG-SOT23-3-1
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 125 V
Power - Max: 330 mW
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 900mV @ 30mA, 300mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 100mA, 1V
Frequency - Transition: 150MHz
Supplier Device Package: PG-SOT23-3-1
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 125 V
Power - Max: 330 mW
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| TLE4241GMXUMA1 |
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Виробник: Infineon Technologies
Description: IC LED DRIVER LINEAR PWM 60MA
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Voltage - Output: 40V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output / Channel: 60mA
Internal Switch(s): Yes
Dimming: PWM
Voltage - Supply (Min): 4V
Voltage - Supply (Max): 45V
Part Status: Active
Description: IC LED DRIVER LINEAR PWM 60MA
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Voltage - Output: 40V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output / Channel: 60mA
Internal Switch(s): Yes
Dimming: PWM
Voltage - Supply (Min): 4V
Voltage - Supply (Max): 45V
Part Status: Active
на замовлення 3649 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 68.19 грн |
| 10+ | 47.23 грн |
| 25+ | 42.65 грн |
| 100+ | 35.26 грн |
| 250+ | 33.00 грн |
| 500+ | 31.63 грн |
| 1000+ | 30.01 грн |
| TLE8250G REEL |
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Виробник: Infineon Technologies
Description: HIGH SPEED CAN-TRANSCEIVER
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 5.5V
Number of Drivers/Receivers: 1/1
Data Rate: 1Mbps
Protocol: CANbus
Supplier Device Package: PG-DSO-8-16
Receiver Hysteresis: 100 mV
Duplex: Half
Part Status: Active
Description: HIGH SPEED CAN-TRANSCEIVER
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 5.5V
Number of Drivers/Receivers: 1/1
Data Rate: 1Mbps
Protocol: CANbus
Supplier Device Package: PG-DSO-8-16
Receiver Hysteresis: 100 mV
Duplex: Half
Part Status: Active
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| TLE8250GXUMA1 |
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Виробник: Infineon Technologies
Description: IC TRANSCEIVER HALF 1/1 DSO-8
Description: IC TRANSCEIVER HALF 1/1 DSO-8
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| TLE8250GXUMA1 |
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Виробник: Infineon Technologies
Description: IC TRANSCEIVER HALF 1/1 DSO-8
Description: IC TRANSCEIVER HALF 1/1 DSO-8
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| CY91F526LKBPMC-GSE1 |
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Виробник: Infineon Technologies
Description: IC MCU 32B 1.0625MB FLSH 176LQFP
Packaging: Tray
Package / Case: 176-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 1.0625MB (1.0625M x 8)
RAM Size: 136K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: FR81S
Data Converters: A/D 48x12b SAR; D/A 2x8b R2R
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I²C, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 176-LQFP (24x24)
Part Status: Obsolete
Number of I/O: 152
Description: IC MCU 32B 1.0625MB FLSH 176LQFP
Packaging: Tray
Package / Case: 176-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 1.0625MB (1.0625M x 8)
RAM Size: 136K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: FR81S
Data Converters: A/D 48x12b SAR; D/A 2x8b R2R
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I²C, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 176-LQFP (24x24)
Part Status: Obsolete
Number of I/O: 152
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| SAK-XC2232N-40F80LAA |
Виробник: Infineon Technologies
Description: 16-BIT C166 MMC - XC2200 FAMILY
Packaging: Bulk
Package / Case: 64-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 320KB (320K x 8)
RAM Size: 42K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 9x10b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I²C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I²S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-64-6
Part Status: Active
Number of I/O: 38
DigiKey Programmable: Not Verified
Description: 16-BIT C166 MMC - XC2200 FAMILY
Packaging: Bulk
Package / Case: 64-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 320KB (320K x 8)
RAM Size: 42K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 9x10b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I²C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I²S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-64-6
Part Status: Active
Number of I/O: 38
DigiKey Programmable: Not Verified
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| SPP03N60C3 |
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Виробник: Infineon Technologies
Description: COOLMOS N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 135µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
Description: COOLMOS N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 135µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
на замовлення 81011 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 799+ | 26.85 грн |
| IRF7478TRPBF-1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 7A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 26mOhm @ 4.2A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1740 pF @ 25 V
Description: MOSFET N-CH 60V 7A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 26mOhm @ 4.2A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1740 pF @ 25 V
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| AUIRFR9024NTRL |
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Виробник: Infineon Technologies
Description: MOSFET P-CH 55V 11A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 175mOhm @ 6.6A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET P-CH 55V 11A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 175mOhm @ 6.6A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Qualification: AEC-Q101
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| BSC112N06LDATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET 2N-CH 60V 20A 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 65W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4020pF @ 30V
Rds On (Max) @ Id, Vgs: 11.2mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 28µA
Supplier Device Package: PG-TDSON-8-4
Part Status: Active
Description: MOSFET 2N-CH 60V 20A 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 65W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4020pF @ 30V
Rds On (Max) @ Id, Vgs: 11.2mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 28µA
Supplier Device Package: PG-TDSON-8-4
Part Status: Active
на замовлення 25000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 38.49 грн |
| BSC112N06LDATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET 2N-CH 60V 20A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 65W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4020pF @ 30V
Rds On (Max) @ Id, Vgs: 11.2mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 28µA
Supplier Device Package: PG-TDSON-8-4
Part Status: Active
Description: MOSFET 2N-CH 60V 20A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 65W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4020pF @ 30V
Rds On (Max) @ Id, Vgs: 11.2mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 28µA
Supplier Device Package: PG-TDSON-8-4
Part Status: Active
на замовлення 25966 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 143.36 грн |
| 10+ | 88.13 грн |
| 100+ | 59.71 грн |
| 500+ | 44.64 грн |
| 1000+ | 42.58 грн |
| TLE4729GXUMA1 |
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Виробник: Infineon Technologies
Description: IC MTR DRVR BIPOLAR 5V-16V 24DSO
Packaging: Tape & Reel (TR)
Package / Case: 24-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 800mA
Interface: Parallel
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 5V ~ 16V
Applications: General Purpose
Technology: Bipolar
Voltage - Load: 5V ~ 16V
Supplier Device Package: PG-DSO-24-9
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushed DC
Part Status: Obsolete
Description: IC MTR DRVR BIPOLAR 5V-16V 24DSO
Packaging: Tape & Reel (TR)
Package / Case: 24-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 800mA
Interface: Parallel
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 5V ~ 16V
Applications: General Purpose
Technology: Bipolar
Voltage - Load: 5V ~ 16V
Supplier Device Package: PG-DSO-24-9
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushed DC
Part Status: Obsolete
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| IRL80HS120 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 80V 12.5A 6PQFN
Packaging: Cut Tape (CT)
Package / Case: 6-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.5A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 7.5A, 10V
Power Dissipation (Max): 11.5W (Tc)
Vgs(th) (Max) @ Id: 2V @ 10µA
Supplier Device Package: 6-PQFN (2x2) (DFN2020)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 25 V
Description: MOSFET N-CH 80V 12.5A 6PQFN
Packaging: Cut Tape (CT)
Package / Case: 6-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.5A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 7.5A, 10V
Power Dissipation (Max): 11.5W (Tc)
Vgs(th) (Max) @ Id: 2V @ 10µA
Supplier Device Package: 6-PQFN (2x2) (DFN2020)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 25 V
на замовлення 16807 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 94.54 грн |
| 10+ | 57.46 грн |
| 100+ | 38.16 грн |
| 500+ | 28.03 грн |
| 1000+ | 25.53 грн |
| 2000+ | 24.22 грн |
| BSP317PL6327 |
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Виробник: Infineon Technologies
Description: P-CHANNEL MOSFET
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 430mA (Ta)
Rds On (Max) @ Id, Vgs: 4Ohm @ 430mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 2V @ 370µA
Supplier Device Package: PG-SOT223-4-21
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 15.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 262 pF @ 25 V
Description: P-CHANNEL MOSFET
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 430mA (Ta)
Rds On (Max) @ Id, Vgs: 4Ohm @ 430mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 2V @ 370µA
Supplier Device Package: PG-SOT223-4-21
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 15.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 262 pF @ 25 V
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| BSP316PL6327 |
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Виробник: Infineon Technologies
Description: P-CHANNEL MOSFET
Description: P-CHANNEL MOSFET
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| BCR 139L3 E6327 |
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Виробник: Infineon Technologies
Description: TRANS PREBIAS NPN 250MW TSLP-3
Description: TRANS PREBIAS NPN 250MW TSLP-3
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| BCR 139T E6327 |
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Виробник: Infineon Technologies
Description: TRANS PREBIAS NPN 250MW SC75
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
Supplier Device Package: PG-SC75-3D
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 22 kOhms
Description: TRANS PREBIAS NPN 250MW SC75
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
Supplier Device Package: PG-SC75-3D
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 22 kOhms
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| BCX52E6237 |
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Виробник: Infineon Technologies
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Packaging: Bulk
Part Status: Active
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Packaging: Bulk
Part Status: Active
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| BCX52E6327 |
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Виробник: Infineon Technologies
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Packaging: Bulk
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 125MHz
Supplier Device Package: PG-SOT89-4-2
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 2 W
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Packaging: Bulk
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 125MHz
Supplier Device Package: PG-SOT89-4-2
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 2 W
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| TDA4862GGEGXUMA2 |
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Виробник: Infineon Technologies
Description: IC PFC CTRLR DCM 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 11V ~ 19V
Mode: Discontinuous Conduction (DCM)
Supplier Device Package: PG-DSO-8
Part Status: Obsolete
Description: IC PFC CTRLR DCM 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 11V ~ 19V
Mode: Discontinuous Conduction (DCM)
Supplier Device Package: PG-DSO-8
Part Status: Obsolete
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Мінімальне замовлення: 2500 шт
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| KITAURIXTC277TFTTOBO1 |
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Виробник: Infineon Technologies
Description: AURIX APPLICATION KIT TC277 TFT
Packaging: Box
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s), LCD
Core Processor: TriCore™
Utilized IC / Part: TC277
Platform: AURIX
Description: AURIX APPLICATION KIT TC277 TFT
Packaging: Box
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s), LCD
Core Processor: TriCore™
Utilized IC / Part: TC277
Platform: AURIX
на замовлення 10 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 19910.48 грн |
| IRFR3504PBF |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 30A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 9.2mOhm @ 30A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 25 V
Description: MOSFET N-CH 40V 30A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 9.2mOhm @ 30A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 25 V
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| IRFR3504TRLPBF |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 30A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 9.2mOhm @ 30A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 25 V
Description: MOSFET N-CH 40V 30A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 9.2mOhm @ 30A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 25 V
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Мінімальне замовлення: 3000 шт
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| IRFR3504TRRPBF |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 30A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 9.2mOhm @ 30A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 25 V
Description: MOSFET N-CH 40V 30A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 9.2mOhm @ 30A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 25 V
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Мінімальне замовлення: 3000 шт
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| SDT05S60XK |
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Виробник: Infineon Technologies
Description: DIODE SIL CARB 600V 5A TO220-2
Packaging: Bulk
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 170pF @ 1V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: PG-TO220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A
Current - Reverse Leakage @ Vr: 200 µA @ 600 V
Description: DIODE SIL CARB 600V 5A TO220-2
Packaging: Bulk
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 170pF @ 1V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: PG-TO220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A
Current - Reverse Leakage @ Vr: 200 µA @ 600 V
на замовлення 700 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 127+ | 176.20 грн |
| IPI70N12S311AKSA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CHANNEL_100+
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 11.6mOhm @ 70A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 83µA
Supplier Device Package: PG-TO262-3-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4355 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CHANNEL_100+
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 11.6mOhm @ 70A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 83µA
Supplier Device Package: PG-TO262-3-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4355 pF @ 25 V
Qualification: AEC-Q101
на замовлення 24000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 218+ | 92.36 грн |
| KP126N6165 |
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Виробник: Infineon Technologies
Description: SENSOR 23.93PSIA 4.8V DSOF8
Termination Style: SMD (SMT) Tab
Operating Temperature: -40°C ~ 125°C
Accuracy: ±0.145PSI (±1kPa)
Pressure Type: Absolute
Operating Pressure: 8.7PSI ~ 23.93PSI (60kPa ~ 165kPa)
Output: 0.2 V ~ 4.8 V
Mounting Type: Surface Mount
Output Type: Analog Voltage
Package / Case: 8-SMD Module
Features: Amplified Output, Temperature Compensated
Packaging: Bulk
Part Status: Obsolete
Port Style: No Port
Applications: Board Mount
Voltage - Supply: 4.5V ~ 5.5V
Description: SENSOR 23.93PSIA 4.8V DSOF8
Termination Style: SMD (SMT) Tab
Operating Temperature: -40°C ~ 125°C
Accuracy: ±0.145PSI (±1kPa)
Pressure Type: Absolute
Operating Pressure: 8.7PSI ~ 23.93PSI (60kPa ~ 165kPa)
Output: 0.2 V ~ 4.8 V
Mounting Type: Surface Mount
Output Type: Analog Voltage
Package / Case: 8-SMD Module
Features: Amplified Output, Temperature Compensated
Packaging: Bulk
Part Status: Obsolete
Port Style: No Port
Applications: Board Mount
Voltage - Supply: 4.5V ~ 5.5V
на замовлення 824 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 66+ | 339.75 грн |
| IDDD06G65C6XTMA1 |
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Виробник: Infineon Technologies
Description: DIODE SIC 650V 18A PGHDSOP101
Current - Reverse Leakage @ Vr: 20 µA @ 420 V
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: PG-HDSOP-10-1
Current - Average Rectified (Io): 18A
Capacitance @ Vr, F: 302pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: 10-PowerSOP Module
Packaging: Tape & Reel (TR)
Description: DIODE SIC 650V 18A PGHDSOP101
Current - Reverse Leakage @ Vr: 20 µA @ 420 V
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: PG-HDSOP-10-1
Current - Average Rectified (Io): 18A
Capacitance @ Vr, F: 302pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: 10-PowerSOP Module
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 1700 шт
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| IDK06G65C5XTMA2 |
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Виробник: Infineon Technologies
Description: DIODE SIL CARB 650V 6A PGTO2632
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 1.1 mA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 6 A
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: PG-TO263-2
Current - Average Rectified (Io): 6A
Capacitance @ Vr, F: 190pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Description: DIODE SIL CARB 650V 6A PGTO2632
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 1.1 mA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 6 A
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: PG-TO263-2
Current - Average Rectified (Io): 6A
Capacitance @ Vr, F: 190pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1000+ | 73.69 грн |
| 2000+ | 66.07 грн |
| IDK06G65C5XTMA2 |
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Виробник: Infineon Technologies
Description: DIODE SIL CARB 650V 6A PGTO2632
Current - Reverse Leakage @ Vr: 1.1 mA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 6 A
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: PG-TO263-2
Current - Average Rectified (Io): 6A
Capacitance @ Vr, F: 190pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Description: DIODE SIL CARB 650V 6A PGTO2632
Current - Reverse Leakage @ Vr: 1.1 mA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 6 A
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: PG-TO263-2
Current - Average Rectified (Io): 6A
Capacitance @ Vr, F: 190pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
на замовлення 3124 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 218.52 грн |
| 10+ | 136.48 грн |
| 100+ | 101.50 грн |
| 500+ | 81.61 грн |
| TLE63892GVXUMA2 |
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Виробник: Infineon Technologies
Description: IC REG CTRLR BUCK 14DSOP
Operating Temperature: -40°C ~ 150°C (TJ)
Function: Step-Down
Mounting Type: Surface Mount
Output Type: Transistor Driver
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Number of Outputs: 1
Part Status: Last Time Buy
Clock Sync: Yes
Duty Cycle (Max): 100%
Output Phases: 1
Control Features: Current Limit, Enable, Reset
Synchronous Rectifier: Yes
Supplier Device Package: PG-DSO-14
Voltage - Supply (Vcc/Vdd): 5V ~ 60V
Topology: Buck
Frequency - Switching: 360kHz
Output Configuration: Positive
Qualification: AEC-Q100
Grade: Automotive
Description: IC REG CTRLR BUCK 14DSOP
Operating Temperature: -40°C ~ 150°C (TJ)
Function: Step-Down
Mounting Type: Surface Mount
Output Type: Transistor Driver
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Number of Outputs: 1
Part Status: Last Time Buy
Clock Sync: Yes
Duty Cycle (Max): 100%
Output Phases: 1
Control Features: Current Limit, Enable, Reset
Synchronous Rectifier: Yes
Supplier Device Package: PG-DSO-14
Voltage - Supply (Vcc/Vdd): 5V ~ 60V
Topology: Buck
Frequency - Switching: 360kHz
Output Configuration: Positive
Qualification: AEC-Q100
Grade: Automotive
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| TLS102B0MBHTSA1 |
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Виробник: Infineon Technologies
Description: IC REG LIN POS ADJ 20MA SCT595-5
Packaging: Cut Tape (CT)
Package / Case: 6-SMD (5 Leads), Gull Wing
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 20mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 75 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-SCT595-5
Voltage - Output (Max): 20V
Voltage - Output (Min/Fixed): 2V
Control Features: Enable
Grade: Automotive
Part Status: Active
PSRR: 100dB (100Hz)
Voltage Dropout (Max): 0.3V @ 20mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 1.5 mA
Qualification: AEC-Q100
Description: IC REG LIN POS ADJ 20MA SCT595-5
Packaging: Cut Tape (CT)
Package / Case: 6-SMD (5 Leads), Gull Wing
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 20mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 75 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-SCT595-5
Voltage - Output (Max): 20V
Voltage - Output (Min/Fixed): 2V
Control Features: Enable
Grade: Automotive
Part Status: Active
PSRR: 100dB (100Hz)
Voltage Dropout (Max): 0.3V @ 20mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 1.5 mA
Qualification: AEC-Q100
на замовлення 5680 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 50.37 грн |
| 10+ | 34.55 грн |
| 25+ | 31.07 грн |
| 100+ | 25.55 грн |
| 250+ | 23.82 грн |
| 500+ | 22.78 грн |
| 1000+ | 21.57 грн |
| SABC165LMHA |
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Виробник: Infineon Technologies
Description: LEGACY 16-BIT MCU
Packaging: Bulk
Package / Case: 100-BQFP
Mounting Type: Surface Mount
Speed: 20MHz
RAM Size: 2K x 8
Operating Temperature: 0°C ~ 70°C (TA)
Oscillator Type: External, Internal
Program Memory Type: ROMless
Core Processor: C166
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: ASC, EBI/EMI, SPI, SSC, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: P-MQFP-100-2
Part Status: Active
Number of I/O: 77
Description: LEGACY 16-BIT MCU
Packaging: Bulk
Package / Case: 100-BQFP
Mounting Type: Surface Mount
Speed: 20MHz
RAM Size: 2K x 8
Operating Temperature: 0°C ~ 70°C (TA)
Oscillator Type: External, Internal
Program Memory Type: ROMless
Core Processor: C166
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: ASC, EBI/EMI, SPI, SSC, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: P-MQFP-100-2
Part Status: Active
Number of I/O: 77
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| SABC165LMHATR |
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Виробник: Infineon Technologies
Description: LEGACY 16-BIT MCU
Peripherals: POR, PWM, WDT
Connectivity: ASC, EBI/EMI, SPI, SSC, UART/USART
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Core Size: 16-Bit
Core Processor: C166
Program Memory Type: ROMless
Oscillator Type: External, Internal
Operating Temperature: 0°C ~ 70°C (TA)
RAM Size: 2K x 8
Speed: 20MHz
Mounting Type: Surface Mount
Package / Case: 100-BQFP
Number of I/O: 77
Part Status: Active
Supplier Device Package: P-MQFP-100
Packaging: Bulk
Description: LEGACY 16-BIT MCU
Peripherals: POR, PWM, WDT
Connectivity: ASC, EBI/EMI, SPI, SSC, UART/USART
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Core Size: 16-Bit
Core Processor: C166
Program Memory Type: ROMless
Oscillator Type: External, Internal
Operating Temperature: 0°C ~ 70°C (TA)
RAM Size: 2K x 8
Speed: 20MHz
Mounting Type: Surface Mount
Package / Case: 100-BQFP
Number of I/O: 77
Part Status: Active
Supplier Device Package: P-MQFP-100
Packaging: Bulk
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| SAB-C165-L25F |
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Виробник: Infineon Technologies
Description: LEGACY 16-BIT MCU
Packaging: Bulk
Number of I/O: 77
Part Status: Active
Supplier Device Package: PG-TQFP-100
Peripherals: POR, PWM, WDT
Connectivity: ASC, EBI/EMI, SPI, SSC, UART/USART
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Core Size: 16-Bit
Core Processor: C166
Program Memory Type: ROMless
Oscillator Type: External, Internal
Operating Temperature: 0°C ~ 70°C (TA)
RAM Size: 2K x 8
Speed: 25MHz
Mounting Type: Surface Mount
Package / Case: 100-LQFP
DigiKey Programmable: Not Verified
Description: LEGACY 16-BIT MCU
Packaging: Bulk
Number of I/O: 77
Part Status: Active
Supplier Device Package: PG-TQFP-100
Peripherals: POR, PWM, WDT
Connectivity: ASC, EBI/EMI, SPI, SSC, UART/USART
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Core Size: 16-Bit
Core Processor: C166
Program Memory Type: ROMless
Oscillator Type: External, Internal
Operating Temperature: 0°C ~ 70°C (TA)
RAM Size: 2K x 8
Speed: 25MHz
Mounting Type: Surface Mount
Package / Case: 100-LQFP
DigiKey Programmable: Not Verified
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| SAB-C165-L25FHA |
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Виробник: Infineon Technologies
Description: LEGACY 16-BIT MCU
Program Memory Type: ROMless
Oscillator Type: External, Internal
Operating Temperature: 0°C ~ 70°C (TA)
RAM Size: 2K x 8
Speed: 25MHz
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Packaging: Bulk
Number of I/O: 77
Part Status: Active
Supplier Device Package: PG-TQFP-100-1
Peripherals: POR, PWM, WDT
Connectivity: ASC, EBI/EMI, SPI, SSC, UART/USART
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Core Size: 16-Bit
Core Processor: C166
DigiKey Programmable: Not Verified
Description: LEGACY 16-BIT MCU
Program Memory Type: ROMless
Oscillator Type: External, Internal
Operating Temperature: 0°C ~ 70°C (TA)
RAM Size: 2K x 8
Speed: 25MHz
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Packaging: Bulk
Number of I/O: 77
Part Status: Active
Supplier Device Package: PG-TQFP-100-1
Peripherals: POR, PWM, WDT
Connectivity: ASC, EBI/EMI, SPI, SSC, UART/USART
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Core Size: 16-Bit
Core Processor: C166
DigiKey Programmable: Not Verified
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| C165L25FHABXUMA1 |
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Виробник: Infineon Technologies
Description: IC MCU 16BIT ROMLESS 100TQFP
Number of I/O: 77
Part Status: Obsolete
Supplier Device Package: PG-TQFP-100
Peripherals: POR, PWM, WDT
Connectivity: EBI/EMI, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Core Size: 16-Bit
Core Processor: C166
Program Memory Type: ROMless
Oscillator Type: External
Operating Temperature: 0°C ~ 70°C (TA)
RAM Size: 2K x 8
Speed: 25MHz
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Packaging: Bulk
Description: IC MCU 16BIT ROMLESS 100TQFP
Number of I/O: 77
Part Status: Obsolete
Supplier Device Package: PG-TQFP-100
Peripherals: POR, PWM, WDT
Connectivity: EBI/EMI, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Core Size: 16-Bit
Core Processor: C166
Program Memory Type: ROMless
Oscillator Type: External
Operating Temperature: 0°C ~ 70°C (TA)
RAM Size: 2K x 8
Speed: 25MHz
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Packaging: Bulk
на замовлення 100 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 24+ | 973.28 грн |
| SABC165LFHABXUMA1 |
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Виробник: Infineon Technologies
Description: LEGACY 16-BIT MCU
Packaging: Bulk
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 20MHz
RAM Size: 2K x 8
Operating Temperature: 0°C ~ 70°C (TA)
Oscillator Type: External, Internal
Program Memory Type: ROMless
Core Processor: C166
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: ASC, EBI/EMI, SPI, SSC, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: PG-TQFP-100
Part Status: Active
Number of I/O: 77
DigiKey Programmable: Not Verified
Description: LEGACY 16-BIT MCU
Packaging: Bulk
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 20MHz
RAM Size: 2K x 8
Operating Temperature: 0°C ~ 70°C (TA)
Oscillator Type: External, Internal
Program Memory Type: ROMless
Core Processor: C166
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: ASC, EBI/EMI, SPI, SSC, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: PG-TQFP-100
Part Status: Active
Number of I/O: 77
DigiKey Programmable: Not Verified
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| SAB-C165LFHABXUMA1 |
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Виробник: Infineon Technologies
Description: LEGACY 16 BIT MICROCONTROLLER
Packaging: Bulk
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 20MHz
RAM Size: 2K x 8
Operating Temperature: 0°C ~ 70°C (TA)
Oscillator Type: External, Internal
Program Memory Type: ROMless
Core Processor: C166
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: ASC, EBI/EMI, SPI, SSC, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: PG-TQFP-100
Part Status: Active
Number of I/O: 77
DigiKey Programmable: Not Verified
Description: LEGACY 16 BIT MICROCONTROLLER
Packaging: Bulk
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 20MHz
RAM Size: 2K x 8
Operating Temperature: 0°C ~ 70°C (TA)
Oscillator Type: External, Internal
Program Memory Type: ROMless
Core Processor: C166
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: ASC, EBI/EMI, SPI, SSC, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: PG-TQFP-100
Part Status: Active
Number of I/O: 77
DigiKey Programmable: Not Verified
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| SAB-C165LFHABXQMA1 |
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Виробник: Infineon Technologies
Description: LEGACY 16 BIT MICROCONTROLLER
Packaging: Bulk
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 20MHz
RAM Size: 2K x 8
Operating Temperature: 0°C ~ 70°C (TA)
Oscillator Type: External, Internal
Program Memory Type: ROMless
Core Processor: C166
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: ASC, EBI/EMI, SPI, SSC, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: PG-TQFP-100
Part Status: Active
Number of I/O: 77
DigiKey Programmable: Not Verified
Description: LEGACY 16 BIT MICROCONTROLLER
Packaging: Bulk
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 20MHz
RAM Size: 2K x 8
Operating Temperature: 0°C ~ 70°C (TA)
Oscillator Type: External, Internal
Program Memory Type: ROMless
Core Processor: C166
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: ASC, EBI/EMI, SPI, SSC, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: PG-TQFP-100
Part Status: Active
Number of I/O: 77
DigiKey Programmable: Not Verified
на замовлення 103 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 1088.13 грн |
| SABC165LF3VHABXUMA1 |
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Виробник: Infineon Technologies
Description: LEGACY 16-BIT MCU
Packaging: Bulk
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 20MHz
RAM Size: 2K x 8
Operating Temperature: 0°C ~ 70°C (TA)
Oscillator Type: External, Internal
Program Memory Type: ROMless
Core Processor: C166
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 3.6V
Connectivity: ASC, EBI/EMI, SPI, SSC, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: PG-TQFP-100
Part Status: Active
Number of I/O: 77
DigiKey Programmable: Not Verified
Description: LEGACY 16-BIT MCU
Packaging: Bulk
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 20MHz
RAM Size: 2K x 8
Operating Temperature: 0°C ~ 70°C (TA)
Oscillator Type: External, Internal
Program Memory Type: ROMless
Core Processor: C166
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 3.6V
Connectivity: ASC, EBI/EMI, SPI, SSC, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: PG-TQFP-100
Part Status: Active
Number of I/O: 77
DigiKey Programmable: Not Verified
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| SAB-C165-LF |
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Виробник: Infineon Technologies
Description: LEGACY 16-BIT MCU
Packaging: Bulk
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 20MHz
RAM Size: 2K x 8
Operating Temperature: 0°C ~ 70°C (TA)
Oscillator Type: External, Internal
Program Memory Type: ROMless
Core Processor: C166
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: ASC, EBI/EMI, SPI, SSC, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: PG-TQFP-100
Part Status: Active
Number of I/O: 77
DigiKey Programmable: Not Verified
Description: LEGACY 16-BIT MCU
Packaging: Bulk
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 20MHz
RAM Size: 2K x 8
Operating Temperature: 0°C ~ 70°C (TA)
Oscillator Type: External, Internal
Program Memory Type: ROMless
Core Processor: C166
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: ASC, EBI/EMI, SPI, SSC, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: PG-TQFP-100
Part Status: Active
Number of I/O: 77
DigiKey Programmable: Not Verified
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| SABC165LMHABXQMA1 |
Виробник: Infineon Technologies
Description: LEGACY 16-BIT MCU
Description: LEGACY 16-BIT MCU
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| AUXYBFP3306 |
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V TO-247AC
Packaging: Tube
Part Status: Obsolete
Description: MOSFET N-CH 60V TO-247AC
Packaging: Tube
Part Status: Obsolete
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| BAS4004E6433HTMA1 |
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Виробник: Infineon Technologies
Description: DIODE ARR SCHOTT 40V 120MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 100 ps
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 120mA (DC)
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 1 µA @ 30 V
Description: DIODE ARR SCHOTT 40V 120MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 100 ps
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 120mA (DC)
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 1 µA @ 30 V
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| BSP92PL6327 |
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Виробник: Infineon Technologies
Description: P-CHANNEL POWER MOSFET
Description: P-CHANNEL POWER MOSFET
на замовлення 283295 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1501+ | 14.17 грн |
| BSZ084N08NS5ATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 80V 40A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 20A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 31µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1820 pF @ 40 V
Description: MOSFET N-CH 80V 40A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 20A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 31µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1820 pF @ 40 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 37.18 грн |
| BC 817-40 E6433 |
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Виробник: Infineon Technologies
Description: TRANS NPN 45V 0.5A PG-SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Frequency - Transition: 170MHz
Supplier Device Package: PG-SOT23
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 330 mW
Description: TRANS NPN 45V 0.5A PG-SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Frequency - Transition: 170MHz
Supplier Device Package: PG-SOT23
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 330 mW
товару немає в наявності
Мінімальне замовлення: 40000 шт
В кошику
од. на суму грн.
| CYW20737A1KML2GT |
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Виробник: Infineon Technologies
Description: IC RF TXRX+MCU BLUETOOTH 32VFQFN
Type: TxRx + MCU
Memory Size: 320kB ROM, 60kB RAM
Frequency: 2.4GHz
Mounting Type: Surface Mount
Sensitivity: -94dBm
Package / Case: 32-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Serial Interfaces: I2C, SPI, UART
RF Family/Standard: Bluetooth
Modulation: GFSK
GPIO: 14
Supplier Device Package: 32-QFN (5x5)
Current - Transmitting: 9.1mA
Data Rate (Max): 1Mbps
Current - Receiving: 9.8mA
Protocol: Bluetooth v4.0
Power - Output: 4dBm
Voltage - Supply: 3.8V
Operating Temperature: -30°C ~ 85°C
Description: IC RF TXRX+MCU BLUETOOTH 32VFQFN
Type: TxRx + MCU
Memory Size: 320kB ROM, 60kB RAM
Frequency: 2.4GHz
Mounting Type: Surface Mount
Sensitivity: -94dBm
Package / Case: 32-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Serial Interfaces: I2C, SPI, UART
RF Family/Standard: Bluetooth
Modulation: GFSK
GPIO: 14
Supplier Device Package: 32-QFN (5x5)
Current - Transmitting: 9.1mA
Data Rate (Max): 1Mbps
Current - Receiving: 9.8mA
Protocol: Bluetooth v4.0
Power - Output: 4dBm
Voltage - Supply: 3.8V
Operating Temperature: -30°C ~ 85°C
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| BAT15099E6433HTMA1 |
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Виробник: Infineon Technologies
Description: DIODE SCHOTTKY 4V 100MW SOT143-4
Packaging: Cut Tape (CT)
Package / Case: TO-253-4, TO-253AA
Diode Type: Schottky - 2 Independent
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.35pF @ 0V, 1MHz
Voltage - Peak Reverse (Max): 4V
Supplier Device Package: PG-SOT-143-3D
Part Status: Active
Current - Max: 110 mA
Power Dissipation (Max): 100 mW
Description: DIODE SCHOTTKY 4V 100MW SOT143-4
Packaging: Cut Tape (CT)
Package / Case: TO-253-4, TO-253AA
Diode Type: Schottky - 2 Independent
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.35pF @ 0V, 1MHz
Voltage - Peak Reverse (Max): 4V
Supplier Device Package: PG-SOT-143-3D
Part Status: Active
Current - Max: 110 mA
Power Dissipation (Max): 100 mW
на замовлення 993 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 68.19 грн |
| 10+ | 40.67 грн |
| 100+ | 26.54 грн |
| 500+ | 19.19 грн |
| BAR6302LE6327XTMA1 |
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Виробник: Infineon Technologies
Description: RF DIODE PIN 50V 250MW TSLP-2
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.3pF @ 5V, 1MHz
Resistance @ If, F: 1Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: PG-TSLP-2-1
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
Description: RF DIODE PIN 50V 250MW TSLP-2
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.3pF @ 5V, 1MHz
Resistance @ If, F: 1Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: PG-TSLP-2-1
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
на замовлення 11000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 31+ | 10.07 грн |
| 45+ | 6.72 грн |
| 51+ | 5.88 грн |
| 100+ | 4.69 грн |
| 250+ | 4.28 грн |
| 500+ | 4.04 грн |
| 1000+ | 3.77 грн |
| 2500+ | 3.57 грн |
| 5000+ | 3.51 грн |






































