Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (129573) > Сторінка 349 з 2160
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||
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BCW61A | Infineon Technologies |
Description: TRANS PNP 32V 0.1A SOT23Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 5V Frequency - Transition: 250MHz Supplier Device Package: PG-SOT23 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 32 V Power - Max: 330 mW |
товару немає в наявності |
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CYRF89435-68LTXC | Infineon Technologies |
Description: IC RF TXRX+MCU ISM>1GHZ 68VFQFNPackaging: Tray Package / Case: 68-VFQFN Exposed Pad Sensitivity: -87dBm Mounting Type: Surface Mount Frequency: 2.4GHz Memory Size: 32kB Flash, 2kB SRAM Type: TxRx + MCU Operating Temperature: 0°C ~ 70°C Voltage - Supply: 1.9V ~ 3.6V Power - Output: 1dBm Current - Receiving: 18mA Data Rate (Max): 1Mbps Current - Transmitting: 13.7mA ~ 18.5mA Supplier Device Package: 68-QFN (8x8) GPIO: 35 Modulation: FHSS, GFSK RF Family/Standard: General ISM > 1GHz Serial Interfaces: I2C, SPI DigiKey Programmable: Not Verified |
на замовлення 6225 шт: термін постачання 21-31 дні (днів) |
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DEMOBOARDIFX90121TOBO1 | Infineon Technologies |
Description: DEMOBOARD IFX90121Packaging: Box Voltage - Output: 5V Voltage - Input: 4.75V ~ 45V Current - Output: 500mA Regulator Topology: Buck Board Type: Fully Populated Utilized IC / Part: IFX90121 Supplied Contents: Board(s) Main Purpose: DC/DC, Step Down Outputs and Type: 1, Non-Isolated Part Status: Active |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
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IGW50N65F5AXKSA1 | Infineon Technologies |
Description: IGBT TRENCH 650V 80A TO247-3Packaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A Supplier Device Package: PG-TO247-3 IGBT Type: Trench Td (on/off) @ 25°C: 21ns/156ns Switching Energy: 490µJ (on), 140µJ (off) Test Condition: 400V, 25A, 12Ohm, 15V Gate Charge: 108 nC Grade: Automotive Part Status: Obsolete Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 150 A Power - Max: 270 W Qualification: AEC-Q101 |
на замовлення 2773 шт: термін постачання 21-31 дні (днів) |
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TLE9222PXXUMA1 | Infineon Technologies |
Description: IC TXRX PG-TSSOP-14-1Packaging: Tape & Reel (TR) Package / Case: 14-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Type: Transceiver Operating Temperature: -40°C ~ 150°C Voltage - Supply: 4.75V ~ 5.25V Number of Drivers/Receivers: 1/1 Data Rate: 10Mbps Protocol: FlexRay Supplier Device Package: PG-TSSOP-14-1 Receiver Hysteresis: 100 mV Grade: Automotive Part Status: Obsolete Qualification: AEC-Q100 |
товару немає в наявності |
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SAK-XC2336B40F80LAAKXUMA1 | Infineon Technologies |
Description: 16 BIT C166 MICROXC2300 FAMILY (Packaging: Bulk Package / Case: 64-LQFP Exposed Pad Mounting Type: Surface Mount Speed: 80MHz Program Memory Size: 320KB (320K x 8) RAM Size: 34K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: C166SV2 Data Converters: A/D 9x10b Core Size: 16/32-Bit Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V Connectivity: CANbus, EBI/EMI, I²C, LINbus, SPI, SSC, UART/USART, USI Peripherals: I²S, POR, PWM, WDT Supplier Device Package: PG-LQFP-64-6 Part Status: Active Number of I/O: 38 DigiKey Programmable: Not Verified |
товару немає в наявності |
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XC2365B40F80LAAKXUMA1 | Infineon Technologies |
Description: IC MCU 16/32B 320KB FLSH 100LQFPPackaging: Bulk Package / Case: 100-LQFP Exposed Pad Mounting Type: Surface Mount Speed: 80MHz Program Memory Size: 320KB (320K x 8) RAM Size: 34K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: C166SV2 Data Converters: A/D 16x10b Core Size: 16/32-Bit Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI Peripherals: I2S, POR, PWM, WDT Supplier Device Package: PG-LQFP-100-8 Number of I/O: 76 DigiKey Programmable: Not Verified |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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SAK-XC2387C200F100LABKXUMA1 | Infineon Technologies |
Description: 16 BIT C166 MICROXC2300 FAMILY ( |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| XC2361A72F100LRABHXUMA1 | Infineon Technologies |
Description: 16 BIT C166 MICROXC2300 FAMILY (Packaging: Bulk Package / Case: 100-LQFP Exposed Pad Mounting Type: Surface Mount Speed: 100MHz Program Memory Size: 576KB (576K x 8) RAM Size: 50K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: C166SV2 Data Converters: A/D 16x10b Core Size: 16/32-Bit Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V Connectivity: CANbus, EBI/EMI, I²C, LINbus, SPI, SSC, UART/USART, USI Peripherals: I²S, POR, PWM, WDT Supplier Device Package: PG-LQFP-100-8 Part Status: Active Number of I/O: 75 |
товару немає в наявності |
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IPU06N03LZG | Infineon Technologies |
Description: N-CHANNEL POWER MOSFETPackaging: Bulk Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 5.1mOhm @ 30A, 10V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 2V @ 40µA Supplier Device Package: PG-TO251-3-21 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2783 pF @ 15 V |
на замовлення 171000 шт: термін постачання 21-31 дні (днів) |
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IPD06N03LAG | Infineon Technologies |
Description: N-CHANNEL POWER MOSFETPackaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 5.7mOhm @ 30A, 10V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 2V @ 40µA Supplier Device Package: PG-TO252-3-11 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2653 pF @ 15 V |
на замовлення 25570 шт: термін постачання 21-31 дні (днів) |
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IPI60R190C6 | Infineon Technologies |
Description: COOLMOS N-CHANNEL POWER MOSFETPackaging: Bulk Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 9.5A, 10V Power Dissipation (Max): 151W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 630µA Supplier Device Package: PG-TO262-3-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IHW40N60R | Infineon Technologies |
Description: IGBT, 80A, 600V, N-CHANNELPackaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 40A Supplier Device Package: PG-TO247-3-21 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: -/193ns Switching Energy: 750µJ (off) Test Condition: 400V, 40A, 5.6Ohm, 15V Gate Charge: 223 nC Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 120 A Power - Max: 305 W |
на замовлення 15396 шт: термін постачання 21-31 дні (днів) |
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| PEB20525EV1.2 | Infineon Technologies |
Description: OPTIMIZED COMMS CONTROLLER Packaging: Bulk Part Status: Active |
на замовлення 333 шт: термін постачання 21-31 дні (днів) |
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CY9BF314NBGL-GE1 | Infineon Technologies |
Description: IC MCU 32BIT 288KB FLSH 112PFBGAPackaging: Tray Package / Case: 112-LFBGA Mounting Type: Surface Mount Speed: 144MHz Program Memory Size: 288KB (288K x 8) RAM Size: 32K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M3 Data Converters: A/D 16x12b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Connectivity: CSIO, EBI/EMI, I²C, LINbus, UART/USART, USB Peripherals: DMA, LVD, POR, PWM, WDT Supplier Device Package: 112-PFBGA (10x10) Part Status: Obsolete Number of I/O: 83 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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TLE7368EXUMA3 | Infineon Technologies |
Description: IC REG AUTO APPL 3OUT DSO-36Packaging: Tape & Reel (TR) Package / Case: 36-BSSOP (0.295", 7.50mm Width) Exposed Pad Voltage - Output: 5V, 3.3V/2.6V, 1.3V Mounting Type: Surface Mount Number of Outputs: 3 Voltage - Input: 4.5V ~ 45V Operating Temperature: -40°C ~ 150°C Applications: Power Supply, Automotive Applications Supplier Device Package: PG-DSO-36 Grade: Automotive Part Status: Not For New Designs Qualification: AEC-Q100 |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||||
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TLE7368EXUMA3 | Infineon Technologies |
Description: IC REG AUTO APPL 3OUT DSO-36Packaging: Cut Tape (CT) Package / Case: 36-BSSOP (0.295", 7.50mm Width) Exposed Pad Voltage - Output: 5V, 3.3V/2.6V, 1.3V Mounting Type: Surface Mount Number of Outputs: 3 Voltage - Input: 4.5V ~ 45V Operating Temperature: -40°C ~ 150°C Applications: Power Supply, Automotive Applications Supplier Device Package: PG-DSO-36 Grade: Automotive Part Status: Not For New Designs Qualification: AEC-Q100 |
на замовлення 1011 шт: термін постачання 21-31 дні (днів) |
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TT190N16SOFHPSA2 | Infineon Technologies |
Description: SCR MODULE 1.6KV 275A MODULEPackaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Operating Temperature: 125°C (TJ) Structure: Series Connection - All SCRs Current - Hold (Ih) (Max): 200 mA Current - Gate Trigger (Igt) (Max): 145 mA Number of SCRs, Diodes: 2 SCRs Current - On State (It (AV)) (Max): 190 A Voltage - Gate Trigger (Vgt) (Max): 2.5 V Part Status: Active Current - On State (It (RMS)) (Max): 275 A Voltage - Off State: 1.6 kV |
на замовлення 64 шт: термін постачання 21-31 дні (днів) |
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TD175N16SOFHPSA1 | Infineon Technologies |
Description: SCR MODULE 1600V 275A MODULE |
на замовлення 44 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
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TT104N14KOFHPSA1 | Infineon Technologies |
Description: SCR MODULE 1.4KV 160A MODULEPackaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 140°C Structure: Series Connection - All SCRs Current - Hold (Ih) (Max): 200 mA Current - Gate Trigger (Igt) (Max): 120 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 2050A @ 50Hz Number of SCRs, Diodes: 2 SCRs Current - On State (It (AV)) (Max): 104 A Voltage - Gate Trigger (Vgt) (Max): 1.4 V Current - On State (It (RMS)) (Max): 160 A Voltage - Off State: 1.4 kV |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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TD250N16KOFHPSA1 | Infineon Technologies |
Description: SCR MODULE 1800V 410A MODULE |
на замовлення 3 шт: термін постачання 21-31 дні (днів) |
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| BCR 555 E6327 | Infineon Technologies |
Description: BIPOLAR DIGITAL TRANSISTORPackaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V Supplier Device Package: PG-SOT23-3-3 Part Status: Active Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 330 mW Frequency - Transition: 150 MHz Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 10 kOhms |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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TLD5190QUXUMA1 | Infineon Technologies |
Description: IC LED DRIVER CTRLR PWM TQFP48-9Packaging: Tape & Reel (TR) Package / Case: 48-TQFP Exposed Pad Voltage - Output: 55V Mounting Type: Surface Mount Number of Outputs: 1 Frequency: 200kHz ~ 700kHz Type: DC DC Controller Operating Temperature: -40°C ~ 150°C (TJ) Internal Switch(s): No Topology: Step-Down (Buck), Step-Up (Boost) Supplier Device Package: PG-TQFP-48-9 Dimming: Analog, PWM Voltage - Supply (Min): 4.5V Voltage - Supply (Max): 40V Grade: Automotive Part Status: Active |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||
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TLD5190QUXUMA1 | Infineon Technologies |
Description: IC LED DRIVER CTRLR PWM TQFP48-9Packaging: Cut Tape (CT) Package / Case: 48-TQFP Exposed Pad Voltage - Output: 55V Mounting Type: Surface Mount Number of Outputs: 1 Frequency: 200kHz ~ 700kHz Type: DC DC Controller Operating Temperature: -40°C ~ 150°C (TJ) Internal Switch(s): No Topology: Step-Down (Buck), Step-Up (Boost) Supplier Device Package: PG-TQFP-48-9 Dimming: Analog, PWM Voltage - Supply (Min): 4.5V Voltage - Supply (Max): 40V Grade: Automotive Part Status: Active |
на замовлення 2128 шт: термін постачання 21-31 дні (днів) |
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PEB 3081 F V1.4 | Infineon Technologies |
Description: IC TELECOM INTERFACE TQFP-48Packaging: Tray Package / Case: 48-LQFP Mounting Type: Surface Mount Function: S / T Bus Interface Transceiver Interface: IOM-2, ISDN, SCI Operating Temperature: 0°C ~ 70°C Voltage - Supply: 3.3V Current - Supply: 30mA Supplier Device Package: PG-TQFP-48 Part Status: Obsolete Number of Circuits: 1 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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PEF 4268 F V1.2 | Infineon Technologies |
Description: IC TELECOM INTERFACE 48-TQFPPackaging: Tray Package / Case: 48-LQFP Mounting Type: Surface Mount Function: Subscriber Line Interface Concept (SLIC) Operating Temperature: -40°C ~ 85°C Voltage - Supply: 4.75V ~ 5.25V Supplier Device Package: PG-TQFP-48-1 Number of Circuits: 1 |
товару немає в наявності |
Мінімальне замовлення: 250 шт В кошику од. на суму грн. | ||||||||||||||||
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IKB15N60TATMA1 | Infineon Technologies |
Description: IGBT TRENCH FS 600V 30A TO263-3Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 34 ns Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 15A Supplier Device Package: PG-TO263-3-2 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 17ns/188ns Switching Energy: 570µJ Test Condition: 400V, 15A, 15Ohm, 15V Gate Charge: 87 nC Part Status: Active Current - Collector (Ic) (Max): 30 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 45 A Power - Max: 130 W |
на замовлення 25 шт: термін постачання 21-31 дні (днів) |
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| IRLR3410PBF-INF | Infineon Technologies |
Description: HEXFET POWER MOSFET Packaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 105mOhm @ 10A, 10V Power Dissipation (Max): 79W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: D-Pak Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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IRS2301STRPBF | Infineon Technologies |
Description: IC GATE DRVR HALF-BRIDGE 8SOICPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 5V ~ 20V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 600 V Supplier Device Package: 8-SOIC Rise / Fall Time (Typ): 130ns, 50ns Channel Type: Independent Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: IGBT, MOSFET (N-Channel) Logic Voltage - VIL, VIH: 0.8V, 2.5V Current - Peak Output (Source, Sink): 200mA, 350mA Part Status: Active DigiKey Programmable: Not Verified |
на замовлення 9916 шт: термін постачання 21-31 дні (днів) |
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IPD14N06S280ATMA2 | Infineon Technologies |
Description: MOSFET N-CH 55V 17A TO252-31Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 80mOhm @ 7A, 10V Power Dissipation (Max): 47W (Tc) Vgs(th) (Max) @ Id: 4V @ 14µA Supplier Device Package: PG-TO252-3-11 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 293 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 3094 шт: термін постачання 21-31 дні (днів) |
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BSC094N06LS5ATMA1 | Infineon Technologies |
Description: MOSFET N-CHANNEL 60V 47A 8TDSONPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Rds On (Max) @ Id, Vgs: 9.4mOhm @ 24A, 10V Power Dissipation (Max): 36W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 14µA Supplier Device Package: PG-TDSON-8-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 30 V |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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BSC094N06LS5ATMA1 | Infineon Technologies |
Description: MOSFET N-CHANNEL 60V 47A 8TDSONPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Rds On (Max) @ Id, Vgs: 9.4mOhm @ 24A, 10V Power Dissipation (Max): 36W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 14µA Supplier Device Package: PG-TDSON-8-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 30 V |
на замовлення 10131 шт: термін постачання 21-31 дні (днів) |
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IPB034N06N3G | Infineon Technologies |
Description: N-CHANNEL POWER MOSFETPackaging: Bulk Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 3.4mOhm @ 100A, 10V Power Dissipation (Max): 167W (Tc) Vgs(th) (Max) @ Id: 4V @ 93µA Supplier Device Package: PG-TO263-7-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 30 V |
на замовлення 3146 шт: термін постачання 21-31 дні (днів) |
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IPP084N06L3GXK | Infineon Technologies |
Description: N-CHANNEL POWER MOSFETPackaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 8.4mOhm @ 50A, 10V Power Dissipation (Max): 79W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 34µA Supplier Device Package: PG-TO220-3-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 30 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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TLE4307D V33 | Infineon Technologies |
Description: IC REG DL CHRPMP/LINEAR DPAK-5Packaging: Tape & Reel (TR) Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C Voltage - Supply: 4.5V ~ 25V Topology: Charge Pump (1), Linear (LDO) (1) Supplier Device Package: PG-TO252-5-1 Voltage/Current - Output 2: 3.3V, 250mA w/LED Driver: No w/Supervisor: No w/Sequencer: No Number of Outputs: 2 |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||
| BSZ0945NDXTMA1 | Infineon Technologies |
Description: TRENCH <= 40V Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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CY9BF324MBGL-GE1 | Infineon Technologies |
Description: IC MCU 32BIT 288KB FLASH 96FBGAPackaging: Tray Package / Case: 96-LFBGA Mounting Type: Surface Mount Speed: 72MHz Program Memory Size: 288KB (288K x 8) RAM Size: 32K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M3 Data Converters: A/D 26x12b; D/A 2x10b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Connectivity: CSIO, EBI/EMI, I²C, LINbus, UART/USART, USB Peripherals: DMA, LVD, POR, PWM, WDT Supplier Device Package: 96-FBGA (6x6) Part Status: Obsolete Number of I/O: 65 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SPB21N10 G | Infineon Technologies |
Description: MOSFET N-CH 100V 21A D2PAK |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||||
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TLE4274V50AKSA1 | Infineon Technologies |
Description: IC REG LIN 5V 400MA PG-TO220-3-1Packaging: Bulk Package / Case: TO-220-3 Output Type: Fixed Mounting Type: Through Hole Current - Output: 400mA Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 220 µA Voltage - Input (Max): 40V Number of Regulators: 1 Supplier Device Package: PG-TO220-3-1 Voltage - Output (Min/Fixed): 5V PSRR: 60dB (100Hz) Voltage Dropout (Max): 0.5V @ 250mA Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit Current - Supply (Max): 30 mA |
на замовлення 216 шт: термін постачання 21-31 дні (днів) |
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TLE8457ALEXUMA1 | Infineon Technologies |
Description: IC TRANSCEIVER 1/1 TSON-8Packaging: Tape & Reel (TR) Package / Case: 8-TDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Type: Transceiver Operating Temperature: -40°C ~ 150°C Voltage - Supply: 5V Number of Drivers/Receivers: 1/1 Protocol: LINbus Supplier Device Package: PG-TSON-8-1 Receiver Hysteresis: 175 mV Part Status: Not For New Designs |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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TLE8457ALEXUMA1 | Infineon Technologies |
Description: IC TRANSCEIVER 1/1 TSON-8Packaging: Cut Tape (CT) Package / Case: 8-TDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Type: Transceiver Operating Temperature: -40°C ~ 150°C Voltage - Supply: 5V Number of Drivers/Receivers: 1/1 Protocol: LINbus Supplier Device Package: PG-TSON-8-1 Receiver Hysteresis: 175 mV Part Status: Not For New Designs |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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BSO083N03MSG | Infineon Technologies |
Description: N-CHANNEL POWER MOSFETPackaging: Bulk Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Rds On (Max) @ Id, Vgs: 8.3mOhm @ 14A, 10V Power Dissipation (Max): 1.56W (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PG-DSO-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 15 V |
на замовлення 1690 шт: термін постачання 21-31 дні (днів) |
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AIDW16S65C5XKSA1 | Infineon Technologies |
Description: DIODE SIL CARB 650V 16A TO247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 471pF @ 1V, 1MHz Current - Average Rectified (Io): 16A Supplier Device Package: PG-TO247-3-41 Operating Temperature - Junction: -40°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 16 A Current - Reverse Leakage @ Vr: 90 µA @ 650 V Qualification: AEC-Q100/101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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AIDW20S65C5XKSA1 | Infineon Technologies |
Description: DIODE SIL CARB 650V 20A TO247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 584pF @ 1V, 1MHz Current - Average Rectified (Io): 20A Supplier Device Package: PG-TO247-3-41 Operating Temperature - Junction: -40°C ~ 175°C Part Status: Last Time Buy Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A Current - Reverse Leakage @ Vr: 120 µA @ 650 V |
на замовлення 240 шт: термін постачання 21-31 дні (днів) |
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AIDW30S65C5XKSA1 | Infineon Technologies |
Description: DIODE SIL CARB 650V 30A TO247-3 |
на замовлення 176 шт: термін постачання 21-31 дні (днів) |
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TZ800N16KOFTIMHPSA1 | Infineon Technologies |
Description: SCR MODULE 1800V 1500A MODULE |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
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| V611480MHPSA1 | Infineon Technologies |
Description: CLAMP DISK DEVICES 48MM HOUSINGS |
на замовлення 3 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | |||||||||||||||||
| V501445MHPSA1 | Infineon Technologies |
Description: CLAMP DISK DEVICES 42MM HOUSINGS |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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TD320N16SOFTIMHPSA1 | Infineon Technologies |
Description: SCR MODULE 1.6KV 520A MODULEPackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Operating Temperature: 130°C (TJ) Structure: Series Connection - SCR/Diode Current - Hold (Ih) (Max): 150 mA Current - Gate Trigger (Igt) (Max): 150 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 9500A @ 50Hz Number of SCRs, Diodes: 1 SCR, 1 Diode Current - On State (It (AV)) (Max): 320 A Voltage - Gate Trigger (Vgt) (Max): 2 V Current - On State (It (RMS)) (Max): 520 A Voltage - Off State: 1.6 kV |
товару немає в наявності |
Мінімальне замовлення: 3 шт В кошику од. на суму грн. | ||||||||||||||||
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TT320N16SOFTIMHPSA1 | Infineon Technologies |
Description: SCR MODULE 1.6KV 520A MODULE |
товару немає в наявності |
Мінімальне замовлення: 3 шт В кошику од. на суму грн. | ||||||||||||||||
| V7226120MHPSA1 | Infineon Technologies |
Description: CLAMP DISK DEVICES 58MM HOUSINGS |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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DD261N22KTIMHPSA1 | Infineon Technologies |
Description: THYR / DIODE MODULE DK |
товару немає в наявності |
Мінімальне замовлення: 3 шт В кошику од. на суму грн. | ||||||||||||||||
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DD540N22KTIMHPSA1 | Infineon Technologies |
Description: DIODE MOD GP 2200V 540A BGPB60ATPackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 540A Supplier Device Package: BG-PB60AT-1 Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 2200 V Voltage - Forward (Vf) (Max) @ If: 1.48 V @ 1.7 kA Current - Reverse Leakage @ Vr: 40 mA @ 2200 V |
товару немає в наявності |
Мінімальне замовлення: 2 шт В кошику од. на суму грн. | ||||||||||||||||
| DZ1100N22KTIMHPSA1 | Infineon Technologies |
Description: THYR / DIODE MODULE DK |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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TLE42994GXUMA1 | Infineon Technologies |
Description: IC REG LINEAR 5V 150MA DSO8 |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
Мінімальне замовлення: 364 шт В кошику од. на суму грн. | ||||||||||||||||
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TLE42994GMV33XUMA1 | Infineon Technologies |
Description: IC REG LINEAR 3.3V 150MA DSO14 |
товару немає в наявності |
Мінімальне замовлення: 334 шт В кошику од. на суму грн. | ||||||||||||||||
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IPD90N08S405ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 80V 90A TO252-3Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 5.3mOhm @ 90A, 10V Power Dissipation (Max): 144W (Tc) Vgs(th) (Max) @ Id: 4V @ 90µA Supplier Device Package: PG-TO252-3-313 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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CY7C1059DV33-12ZSXQ | Infineon Technologies |
Description: IC SRAM 8MBIT PARALLEL 44TSOP IIPackaging: Tube Package / Case: 44-TSOP (0.400", 10.16mm Width) Mounting Type: Surface Mount Memory Size: 8Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 3V ~ 3.6V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 44-TSOP II Write Cycle Time - Word, Page: 12ns Memory Interface: Parallel Access Time: 12 ns Memory Organization: 1M x 8 DigiKey Programmable: Not Verified |
на замовлення 20430 шт: термін постачання 21-31 дні (днів) |
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IPD50R2K0CEAUMA1 | Infineon Technologies |
Description: MOSFET N-CH 500V 2.4A TO252-3Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc) Rds On (Max) @ Id, Vgs: 2Ohm @ 600mA, 13V Power Dissipation (Max): 33W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 50µA Supplier Device Package: PG-TO252-3 Drive Voltage (Max Rds On, Min Rds On): 13V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 124 pF @ 100 V |
на замовлення 24537 шт: термін постачання 21-31 дні (днів) |
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IPD50R1K4CEAUMA1 | Infineon Technologies |
Description: MOSFET N-CH 500V 3.1A TO252-3Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 900mA, 13V Power Dissipation (Max): 42W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 70µA Supplier Device Package: PG-TO252-3 Drive Voltage (Max Rds On, Min Rds On): 13V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 178 pF @ 100 V |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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| BCW61A |
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Виробник: Infineon Technologies
Description: TRANS PNP 32V 0.1A SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 330 mW
Description: TRANS PNP 32V 0.1A SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 330 mW
товару немає в наявності
В кошику
од. на суму грн.
| CYRF89435-68LTXC |
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Виробник: Infineon Technologies
Description: IC RF TXRX+MCU ISM>1GHZ 68VFQFN
Packaging: Tray
Package / Case: 68-VFQFN Exposed Pad
Sensitivity: -87dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 32kB Flash, 2kB SRAM
Type: TxRx + MCU
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 1.9V ~ 3.6V
Power - Output: 1dBm
Current - Receiving: 18mA
Data Rate (Max): 1Mbps
Current - Transmitting: 13.7mA ~ 18.5mA
Supplier Device Package: 68-QFN (8x8)
GPIO: 35
Modulation: FHSS, GFSK
RF Family/Standard: General ISM > 1GHz
Serial Interfaces: I2C, SPI
DigiKey Programmable: Not Verified
Description: IC RF TXRX+MCU ISM>1GHZ 68VFQFN
Packaging: Tray
Package / Case: 68-VFQFN Exposed Pad
Sensitivity: -87dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 32kB Flash, 2kB SRAM
Type: TxRx + MCU
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 1.9V ~ 3.6V
Power - Output: 1dBm
Current - Receiving: 18mA
Data Rate (Max): 1Mbps
Current - Transmitting: 13.7mA ~ 18.5mA
Supplier Device Package: 68-QFN (8x8)
GPIO: 35
Modulation: FHSS, GFSK
RF Family/Standard: General ISM > 1GHz
Serial Interfaces: I2C, SPI
DigiKey Programmable: Not Verified
на замовлення 6225 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 131.44 грн |
| 10+ | 108.88 грн |
| 25+ | 102.78 грн |
| 100+ | 88.58 грн |
| 260+ | 83.66 грн |
| 520+ | 80.33 грн |
| 1040+ | 75.92 грн |
| 5200+ | 69.42 грн |
| DEMOBOARDIFX90121TOBO1 |
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Виробник: Infineon Technologies
Description: DEMOBOARD IFX90121
Packaging: Box
Voltage - Output: 5V
Voltage - Input: 4.75V ~ 45V
Current - Output: 500mA
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: IFX90121
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
Part Status: Active
Description: DEMOBOARD IFX90121
Packaging: Box
Voltage - Output: 5V
Voltage - Input: 4.75V ~ 45V
Current - Output: 500mA
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: IFX90121
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
Part Status: Active
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 5691.44 грн |
| IGW50N65F5AXKSA1 |
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Виробник: Infineon Technologies
Description: IGBT TRENCH 650V 80A TO247-3
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench
Td (on/off) @ 25°C: 21ns/156ns
Switching Energy: 490µJ (on), 140µJ (off)
Test Condition: 400V, 25A, 12Ohm, 15V
Gate Charge: 108 nC
Grade: Automotive
Part Status: Obsolete
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 270 W
Qualification: AEC-Q101
Description: IGBT TRENCH 650V 80A TO247-3
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench
Td (on/off) @ 25°C: 21ns/156ns
Switching Energy: 490µJ (on), 140µJ (off)
Test Condition: 400V, 25A, 12Ohm, 15V
Gate Charge: 108 nC
Grade: Automotive
Part Status: Obsolete
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 270 W
Qualification: AEC-Q101
на замовлення 2773 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 78+ | 297.06 грн |
| TLE9222PXXUMA1 |
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Виробник: Infineon Technologies
Description: IC TXRX PG-TSSOP-14-1
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4.75V ~ 5.25V
Number of Drivers/Receivers: 1/1
Data Rate: 10Mbps
Protocol: FlexRay
Supplier Device Package: PG-TSSOP-14-1
Receiver Hysteresis: 100 mV
Grade: Automotive
Part Status: Obsolete
Qualification: AEC-Q100
Description: IC TXRX PG-TSSOP-14-1
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4.75V ~ 5.25V
Number of Drivers/Receivers: 1/1
Data Rate: 10Mbps
Protocol: FlexRay
Supplier Device Package: PG-TSSOP-14-1
Receiver Hysteresis: 100 mV
Grade: Automotive
Part Status: Obsolete
Qualification: AEC-Q100
товару немає в наявності
В кошику
од. на суму грн.
| SAK-XC2336B40F80LAAKXUMA1 |
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Виробник: Infineon Technologies
Description: 16 BIT C166 MICROXC2300 FAMILY (
Packaging: Bulk
Package / Case: 64-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 320KB (320K x 8)
RAM Size: 34K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 9x10b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I²C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I²S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-64-6
Part Status: Active
Number of I/O: 38
DigiKey Programmable: Not Verified
Description: 16 BIT C166 MICROXC2300 FAMILY (
Packaging: Bulk
Package / Case: 64-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 320KB (320K x 8)
RAM Size: 34K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 9x10b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I²C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I²S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-64-6
Part Status: Active
Number of I/O: 38
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
| XC2365B40F80LAAKXUMA1 |
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Виробник: Infineon Technologies
Description: IC MCU 16/32B 320KB FLSH 100LQFP
Packaging: Bulk
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 320KB (320K x 8)
RAM Size: 34K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 16x10b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-8
Number of I/O: 76
DigiKey Programmable: Not Verified
Description: IC MCU 16/32B 320KB FLSH 100LQFP
Packaging: Bulk
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 320KB (320K x 8)
RAM Size: 34K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 16x10b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-8
Number of I/O: 76
DigiKey Programmable: Not Verified
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 42+ | 481.28 грн |
| SAK-XC2387C200F100LABKXUMA1 |
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Виробник: Infineon Technologies
Description: 16 BIT C166 MICROXC2300 FAMILY (
Description: 16 BIT C166 MICROXC2300 FAMILY (
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| XC2361A72F100LRABHXUMA1 |
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Виробник: Infineon Technologies
Description: 16 BIT C166 MICROXC2300 FAMILY (
Packaging: Bulk
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 100MHz
Program Memory Size: 576KB (576K x 8)
RAM Size: 50K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 16x10b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I²C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I²S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-8
Part Status: Active
Number of I/O: 75
Description: 16 BIT C166 MICROXC2300 FAMILY (
Packaging: Bulk
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 100MHz
Program Memory Size: 576KB (576K x 8)
RAM Size: 50K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 16x10b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I²C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I²S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-8
Part Status: Active
Number of I/O: 75
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| IPU06N03LZG |
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Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 30A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2V @ 40µA
Supplier Device Package: PG-TO251-3-21
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2783 pF @ 15 V
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 30A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2V @ 40µA
Supplier Device Package: PG-TO251-3-21
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2783 pF @ 15 V
на замовлення 171000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 650+ | 32.71 грн |
| IPD06N03LAG |
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Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 30A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2V @ 40µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2653 pF @ 15 V
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 30A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2V @ 40µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2653 pF @ 15 V
на замовлення 25570 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 417+ | 49.97 грн |
| IPI60R190C6 |
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Виробник: Infineon Technologies
Description: COOLMOS N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 9.5A, 10V
Power Dissipation (Max): 151W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 630µA
Supplier Device Package: PG-TO262-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 100 V
Description: COOLMOS N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 9.5A, 10V
Power Dissipation (Max): 151W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 630µA
Supplier Device Package: PG-TO262-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 100 V
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| IHW40N60R |
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Виробник: Infineon Technologies
Description: IGBT, 80A, 600V, N-CHANNEL
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 40A
Supplier Device Package: PG-TO247-3-21
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: -/193ns
Switching Energy: 750µJ (off)
Test Condition: 400V, 40A, 5.6Ohm, 15V
Gate Charge: 223 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 305 W
Description: IGBT, 80A, 600V, N-CHANNEL
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 40A
Supplier Device Package: PG-TO247-3-21
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: -/193ns
Switching Energy: 750µJ (off)
Test Condition: 400V, 40A, 5.6Ohm, 15V
Gate Charge: 223 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 305 W
на замовлення 15396 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 121+ | 180.47 грн |
| PEB20525EV1.2 |
Виробник: Infineon Technologies
Description: OPTIMIZED COMMS CONTROLLER
Packaging: Bulk
Part Status: Active
Description: OPTIMIZED COMMS CONTROLLER
Packaging: Bulk
Part Status: Active
на замовлення 333 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 28+ | 859.89 грн |
| CY9BF314NBGL-GE1 |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 288KB FLSH 112PFBGA
Packaging: Tray
Package / Case: 112-LFBGA
Mounting Type: Surface Mount
Speed: 144MHz
Program Memory Size: 288KB (288K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 16x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, I²C, LINbus, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 112-PFBGA (10x10)
Part Status: Obsolete
Number of I/O: 83
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 288KB FLSH 112PFBGA
Packaging: Tray
Package / Case: 112-LFBGA
Mounting Type: Surface Mount
Speed: 144MHz
Program Memory Size: 288KB (288K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 16x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, I²C, LINbus, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 112-PFBGA (10x10)
Part Status: Obsolete
Number of I/O: 83
DigiKey Programmable: Not Verified
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| TLE7368EXUMA3 |
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Виробник: Infineon Technologies
Description: IC REG AUTO APPL 3OUT DSO-36
Packaging: Tape & Reel (TR)
Package / Case: 36-BSSOP (0.295", 7.50mm Width) Exposed Pad
Voltage - Output: 5V, 3.3V/2.6V, 1.3V
Mounting Type: Surface Mount
Number of Outputs: 3
Voltage - Input: 4.5V ~ 45V
Operating Temperature: -40°C ~ 150°C
Applications: Power Supply, Automotive Applications
Supplier Device Package: PG-DSO-36
Grade: Automotive
Part Status: Not For New Designs
Qualification: AEC-Q100
Description: IC REG AUTO APPL 3OUT DSO-36
Packaging: Tape & Reel (TR)
Package / Case: 36-BSSOP (0.295", 7.50mm Width) Exposed Pad
Voltage - Output: 5V, 3.3V/2.6V, 1.3V
Mounting Type: Surface Mount
Number of Outputs: 3
Voltage - Input: 4.5V ~ 45V
Operating Temperature: -40°C ~ 150°C
Applications: Power Supply, Automotive Applications
Supplier Device Package: PG-DSO-36
Grade: Automotive
Part Status: Not For New Designs
Qualification: AEC-Q100
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Мінімальне замовлення: 1000 шт
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| TLE7368EXUMA3 |
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Виробник: Infineon Technologies
Description: IC REG AUTO APPL 3OUT DSO-36
Packaging: Cut Tape (CT)
Package / Case: 36-BSSOP (0.295", 7.50mm Width) Exposed Pad
Voltage - Output: 5V, 3.3V/2.6V, 1.3V
Mounting Type: Surface Mount
Number of Outputs: 3
Voltage - Input: 4.5V ~ 45V
Operating Temperature: -40°C ~ 150°C
Applications: Power Supply, Automotive Applications
Supplier Device Package: PG-DSO-36
Grade: Automotive
Part Status: Not For New Designs
Qualification: AEC-Q100
Description: IC REG AUTO APPL 3OUT DSO-36
Packaging: Cut Tape (CT)
Package / Case: 36-BSSOP (0.295", 7.50mm Width) Exposed Pad
Voltage - Output: 5V, 3.3V/2.6V, 1.3V
Mounting Type: Surface Mount
Number of Outputs: 3
Voltage - Input: 4.5V ~ 45V
Operating Temperature: -40°C ~ 150°C
Applications: Power Supply, Automotive Applications
Supplier Device Package: PG-DSO-36
Grade: Automotive
Part Status: Not For New Designs
Qualification: AEC-Q100
на замовлення 1011 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 540.80 грн |
| 10+ | 403.12 грн |
| 25+ | 373.73 грн |
| 100+ | 320.50 грн |
| 250+ | 306.08 грн |
| 500+ | 297.38 грн |
| TT190N16SOFHPSA2 |
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Виробник: Infineon Technologies
Description: SCR MODULE 1.6KV 275A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 125°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 145 mA
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 190 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Part Status: Active
Current - On State (It (RMS)) (Max): 275 A
Voltage - Off State: 1.6 kV
Description: SCR MODULE 1.6KV 275A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 125°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 145 mA
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 190 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Part Status: Active
Current - On State (It (RMS)) (Max): 275 A
Voltage - Off State: 1.6 kV
на замовлення 64 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 4145.85 грн |
| 16+ | 2891.63 грн |
| TD175N16SOFHPSA1 |
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Виробник: Infineon Technologies
Description: SCR MODULE 1600V 275A MODULE
Description: SCR MODULE 1600V 275A MODULE
на замовлення 44 шт:
термін постачання 21-31 дні (днів)
| TT104N14KOFHPSA1 |
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Виробник: Infineon Technologies
Description: SCR MODULE 1.4KV 160A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 120 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 2050A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 104 A
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Current - On State (It (RMS)) (Max): 160 A
Voltage - Off State: 1.4 kV
Description: SCR MODULE 1.4KV 160A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 120 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 2050A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 104 A
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Current - On State (It (RMS)) (Max): 160 A
Voltage - Off State: 1.4 kV
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| TD250N16KOFHPSA1 |
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Виробник: Infineon Technologies
Description: SCR MODULE 1800V 410A MODULE
Description: SCR MODULE 1800V 410A MODULE
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 15066.33 грн |
| BCR 555 E6327 |
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Виробник: Infineon Technologies
Description: BIPOLAR DIGITAL TRANSISTOR
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V
Supplier Device Package: PG-SOT23-3-3
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 330 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Description: BIPOLAR DIGITAL TRANSISTOR
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V
Supplier Device Package: PG-SOT23-3-3
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 330 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
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| TLD5190QUXUMA1 |
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Виробник: Infineon Technologies
Description: IC LED DRIVER CTRLR PWM TQFP48-9
Packaging: Tape & Reel (TR)
Package / Case: 48-TQFP Exposed Pad
Voltage - Output: 55V
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 200kHz ~ 700kHz
Type: DC DC Controller
Operating Temperature: -40°C ~ 150°C (TJ)
Internal Switch(s): No
Topology: Step-Down (Buck), Step-Up (Boost)
Supplier Device Package: PG-TQFP-48-9
Dimming: Analog, PWM
Voltage - Supply (Min): 4.5V
Voltage - Supply (Max): 40V
Grade: Automotive
Part Status: Active
Description: IC LED DRIVER CTRLR PWM TQFP48-9
Packaging: Tape & Reel (TR)
Package / Case: 48-TQFP Exposed Pad
Voltage - Output: 55V
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 200kHz ~ 700kHz
Type: DC DC Controller
Operating Temperature: -40°C ~ 150°C (TJ)
Internal Switch(s): No
Topology: Step-Down (Buck), Step-Up (Boost)
Supplier Device Package: PG-TQFP-48-9
Dimming: Analog, PWM
Voltage - Supply (Min): 4.5V
Voltage - Supply (Max): 40V
Grade: Automotive
Part Status: Active
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Мінімальне замовлення: 2500 шт
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| TLD5190QUXUMA1 |
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Виробник: Infineon Technologies
Description: IC LED DRIVER CTRLR PWM TQFP48-9
Packaging: Cut Tape (CT)
Package / Case: 48-TQFP Exposed Pad
Voltage - Output: 55V
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 200kHz ~ 700kHz
Type: DC DC Controller
Operating Temperature: -40°C ~ 150°C (TJ)
Internal Switch(s): No
Topology: Step-Down (Buck), Step-Up (Boost)
Supplier Device Package: PG-TQFP-48-9
Dimming: Analog, PWM
Voltage - Supply (Min): 4.5V
Voltage - Supply (Max): 40V
Grade: Automotive
Part Status: Active
Description: IC LED DRIVER CTRLR PWM TQFP48-9
Packaging: Cut Tape (CT)
Package / Case: 48-TQFP Exposed Pad
Voltage - Output: 55V
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 200kHz ~ 700kHz
Type: DC DC Controller
Operating Temperature: -40°C ~ 150°C (TJ)
Internal Switch(s): No
Topology: Step-Down (Buck), Step-Up (Boost)
Supplier Device Package: PG-TQFP-48-9
Dimming: Analog, PWM
Voltage - Supply (Min): 4.5V
Voltage - Supply (Max): 40V
Grade: Automotive
Part Status: Active
на замовлення 2128 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 183.70 грн |
| 10+ | 132.06 грн |
| 25+ | 120.81 грн |
| 100+ | 101.74 грн |
| 250+ | 96.21 грн |
| 500+ | 92.87 грн |
| 1000+ | 88.65 грн |
| PEB 3081 F V1.4 |
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Виробник: Infineon Technologies
Description: IC TELECOM INTERFACE TQFP-48
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Function: S / T Bus Interface Transceiver
Interface: IOM-2, ISDN, SCI
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.3V
Current - Supply: 30mA
Supplier Device Package: PG-TQFP-48
Part Status: Obsolete
Number of Circuits: 1
Description: IC TELECOM INTERFACE TQFP-48
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Function: S / T Bus Interface Transceiver
Interface: IOM-2, ISDN, SCI
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.3V
Current - Supply: 30mA
Supplier Device Package: PG-TQFP-48
Part Status: Obsolete
Number of Circuits: 1
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| PEF 4268 F V1.2 |
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Виробник: Infineon Technologies
Description: IC TELECOM INTERFACE 48-TQFP
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Function: Subscriber Line Interface Concept (SLIC)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.75V ~ 5.25V
Supplier Device Package: PG-TQFP-48-1
Number of Circuits: 1
Description: IC TELECOM INTERFACE 48-TQFP
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Function: Subscriber Line Interface Concept (SLIC)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.75V ~ 5.25V
Supplier Device Package: PG-TQFP-48-1
Number of Circuits: 1
товару немає в наявності
Мінімальне замовлення: 250 шт
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| IKB15N60TATMA1 |
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Виробник: Infineon Technologies
Description: IGBT TRENCH FS 600V 30A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 34 ns
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 15A
Supplier Device Package: PG-TO263-3-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 17ns/188ns
Switching Energy: 570µJ
Test Condition: 400V, 15A, 15Ohm, 15V
Gate Charge: 87 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 130 W
Description: IGBT TRENCH FS 600V 30A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 34 ns
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 15A
Supplier Device Package: PG-TO263-3-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 17ns/188ns
Switching Energy: 570µJ
Test Condition: 400V, 15A, 15Ohm, 15V
Gate Charge: 87 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 130 W
на замовлення 25 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 221.70 грн |
| 10+ | 138.31 грн |
| IRLR3410PBF-INF |
Виробник: Infineon Technologies
Description: HEXFET POWER MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 10A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: D-Pak
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
Description: HEXFET POWER MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 10A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: D-Pak
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
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| IRS2301STRPBF |
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Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 5V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 130ns, 50ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 200mA, 350mA
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 5V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 130ns, 50ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 200mA, 350mA
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 9916 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 87.89 грн |
| 10+ | 61.23 грн |
| 25+ | 55.42 грн |
| 100+ | 46.00 грн |
| 250+ | 43.13 грн |
| 500+ | 41.40 грн |
| 1000+ | 39.95 грн |
| IPD14N06S280ATMA2 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 17A TO252-31
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 7A, 10V
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 4V @ 14µA
Supplier Device Package: PG-TO252-3-11
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 293 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 55V 17A TO252-31
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 7A, 10V
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 4V @ 14µA
Supplier Device Package: PG-TO252-3-11
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 293 pF @ 25 V
Qualification: AEC-Q101
на замовлення 3094 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 95.81 грн |
| 10+ | 57.95 грн |
| 100+ | 38.28 грн |
| 500+ | 27.99 грн |
| 1000+ | 25.43 грн |
| BSC094N06LS5ATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CHANNEL 60V 47A 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 24A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 14µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 30 V
Description: MOSFET N-CHANNEL 60V 47A 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 24A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 14µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 30 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 18.34 грн |
| BSC094N06LS5ATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CHANNEL 60V 47A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 24A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 14µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 30 V
Description: MOSFET N-CHANNEL 60V 47A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 24A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 14µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 30 V
на замовлення 10131 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 75.22 грн |
| 10+ | 45.06 грн |
| 50+ | 33.21 грн |
| 100+ | 27.58 грн |
| 500+ | 21.25 грн |
| IPB034N06N3G |
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Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 100A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 4V @ 93µA
Supplier Device Package: PG-TO263-7-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 30 V
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 100A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 4V @ 93µA
Supplier Device Package: PG-TO263-7-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 30 V
на замовлення 3146 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 214+ | 97.16 грн |
| IPP084N06L3GXK |
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Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 50A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 34µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 30 V
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 50A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 34µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 30 V
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| TLE4307D V33 |
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Виробник: Infineon Technologies
Description: IC REG DL CHRPMP/LINEAR DPAK-5
Packaging: Tape & Reel (TR)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4.5V ~ 25V
Topology: Charge Pump (1), Linear (LDO) (1)
Supplier Device Package: PG-TO252-5-1
Voltage/Current - Output 2: 3.3V, 250mA
w/LED Driver: No
w/Supervisor: No
w/Sequencer: No
Number of Outputs: 2
Description: IC REG DL CHRPMP/LINEAR DPAK-5
Packaging: Tape & Reel (TR)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4.5V ~ 25V
Topology: Charge Pump (1), Linear (LDO) (1)
Supplier Device Package: PG-TO252-5-1
Voltage/Current - Output 2: 3.3V, 250mA
w/LED Driver: No
w/Supervisor: No
w/Sequencer: No
Number of Outputs: 2
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| CY9BF324MBGL-GE1 |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 288KB FLASH 96FBGA
Packaging: Tray
Package / Case: 96-LFBGA
Mounting Type: Surface Mount
Speed: 72MHz
Program Memory Size: 288KB (288K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 26x12b; D/A 2x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, I²C, LINbus, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 96-FBGA (6x6)
Part Status: Obsolete
Number of I/O: 65
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 288KB FLASH 96FBGA
Packaging: Tray
Package / Case: 96-LFBGA
Mounting Type: Surface Mount
Speed: 72MHz
Program Memory Size: 288KB (288K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 26x12b; D/A 2x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, I²C, LINbus, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 96-FBGA (6x6)
Part Status: Obsolete
Number of I/O: 65
DigiKey Programmable: Not Verified
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| SPB21N10 G |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 21A D2PAK
Description: MOSFET N-CH 100V 21A D2PAK
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| TLE4274V50AKSA1 |
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Виробник: Infineon Technologies
Description: IC REG LIN 5V 400MA PG-TO220-3-1
Packaging: Bulk
Package / Case: TO-220-3
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 220 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO220-3-1
Voltage - Output (Min/Fixed): 5V
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.5V @ 250mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 30 mA
Description: IC REG LIN 5V 400MA PG-TO220-3-1
Packaging: Bulk
Package / Case: TO-220-3
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 220 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO220-3-1
Voltage - Output (Min/Fixed): 5V
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.5V @ 250mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 30 mA
на замовлення 216 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 216+ | 105.93 грн |
| TLE8457ALEXUMA1 |
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Виробник: Infineon Technologies
Description: IC TRANSCEIVER 1/1 TSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-TDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Type: Transceiver
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 5V
Number of Drivers/Receivers: 1/1
Protocol: LINbus
Supplier Device Package: PG-TSON-8-1
Receiver Hysteresis: 175 mV
Part Status: Not For New Designs
Description: IC TRANSCEIVER 1/1 TSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-TDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Type: Transceiver
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 5V
Number of Drivers/Receivers: 1/1
Protocol: LINbus
Supplier Device Package: PG-TSON-8-1
Receiver Hysteresis: 175 mV
Part Status: Not For New Designs
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 83.98 грн |
| TLE8457ALEXUMA1 |
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Виробник: Infineon Technologies
Description: IC TRANSCEIVER 1/1 TSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-TDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Type: Transceiver
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 5V
Number of Drivers/Receivers: 1/1
Protocol: LINbus
Supplier Device Package: PG-TSON-8-1
Receiver Hysteresis: 175 mV
Part Status: Not For New Designs
Description: IC TRANSCEIVER 1/1 TSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-TDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Type: Transceiver
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 5V
Number of Drivers/Receivers: 1/1
Protocol: LINbus
Supplier Device Package: PG-TSON-8-1
Receiver Hysteresis: 175 mV
Part Status: Not For New Designs
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 163.11 грн |
| 10+ | 140.75 грн |
| 25+ | 132.85 грн |
| 100+ | 106.22 грн |
| 250+ | 99.74 грн |
| 500+ | 87.27 грн |
| 1000+ | 74.65 грн |
| BSO083N03MSG |
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Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 14A, 10V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-DSO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 15 V
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 14A, 10V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-DSO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 15 V
на замовлення 1690 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1250+ | 19.00 грн |
| AIDW16S65C5XKSA1 |
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Виробник: Infineon Technologies
Description: DIODE SIL CARB 650V 16A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 471pF @ 1V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: PG-TO247-3-41
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 16 A
Current - Reverse Leakage @ Vr: 90 µA @ 650 V
Qualification: AEC-Q100/101
Description: DIODE SIL CARB 650V 16A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 471pF @ 1V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: PG-TO247-3-41
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 16 A
Current - Reverse Leakage @ Vr: 90 µA @ 650 V
Qualification: AEC-Q100/101
товару немає в наявності
В кошику
од. на суму грн.
| AIDW20S65C5XKSA1 |
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Виробник: Infineon Technologies
Description: DIODE SIL CARB 650V 20A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 584pF @ 1V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: PG-TO247-3-41
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A
Current - Reverse Leakage @ Vr: 120 µA @ 650 V
Description: DIODE SIL CARB 650V 20A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 584pF @ 1V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: PG-TO247-3-41
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A
Current - Reverse Leakage @ Vr: 120 µA @ 650 V
на замовлення 240 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 640.56 грн |
| 10+ | 557.21 грн |
| 100+ | 461.34 грн |
| AIDW30S65C5XKSA1 |
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Виробник: Infineon Technologies
Description: DIODE SIL CARB 650V 30A TO247-3
Description: DIODE SIL CARB 650V 30A TO247-3
на замовлення 176 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 758.54 грн |
| 10+ | 659.77 грн |
| 100+ | 546.25 грн |
| TZ800N16KOFTIMHPSA1 |
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Виробник: Infineon Technologies
Description: SCR MODULE 1800V 1500A MODULE
Description: SCR MODULE 1800V 1500A MODULE
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 44586.92 грн |
| V611480MHPSA1 |
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Виробник: Infineon Technologies
Description: CLAMP DISK DEVICES 48MM HOUSINGS
Description: CLAMP DISK DEVICES 48MM HOUSINGS
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
| V501445MHPSA1 |
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Виробник: Infineon Technologies
Description: CLAMP DISK DEVICES 42MM HOUSINGS
Description: CLAMP DISK DEVICES 42MM HOUSINGS
товару немає в наявності
В кошику
од. на суму грн.
| TD320N16SOFTIMHPSA1 |
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Виробник: Infineon Technologies
Description: SCR MODULE 1.6KV 520A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 130°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 150 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 9500A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 320 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 520 A
Voltage - Off State: 1.6 kV
Description: SCR MODULE 1.6KV 520A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 130°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 150 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 9500A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 320 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 520 A
Voltage - Off State: 1.6 kV
товару немає в наявності
Мінімальне замовлення: 3 шт
В кошику
од. на суму грн.
| TT320N16SOFTIMHPSA1 |
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Виробник: Infineon Technologies
Description: SCR MODULE 1.6KV 520A MODULE
Description: SCR MODULE 1.6KV 520A MODULE
товару немає в наявності
Мінімальне замовлення: 3 шт
В кошику
од. на суму грн.
| V7226120MHPSA1 |
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Виробник: Infineon Technologies
Description: CLAMP DISK DEVICES 58MM HOUSINGS
Description: CLAMP DISK DEVICES 58MM HOUSINGS
товару немає в наявності
В кошику
од. на суму грн.
| DD261N22KTIMHPSA1 |
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Виробник: Infineon Technologies
Description: THYR / DIODE MODULE DK
Description: THYR / DIODE MODULE DK
товару немає в наявності
Мінімальне замовлення: 3 шт
В кошику
од. на суму грн.
| DD540N22KTIMHPSA1 |
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Виробник: Infineon Technologies
Description: DIODE MOD GP 2200V 540A BGPB60AT
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 540A
Supplier Device Package: BG-PB60AT-1
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 2200 V
Voltage - Forward (Vf) (Max) @ If: 1.48 V @ 1.7 kA
Current - Reverse Leakage @ Vr: 40 mA @ 2200 V
Description: DIODE MOD GP 2200V 540A BGPB60AT
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 540A
Supplier Device Package: BG-PB60AT-1
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 2200 V
Voltage - Forward (Vf) (Max) @ If: 1.48 V @ 1.7 kA
Current - Reverse Leakage @ Vr: 40 mA @ 2200 V
товару немає в наявності
Мінімальне замовлення: 2 шт
В кошику
од. на суму грн.
| DZ1100N22KTIMHPSA1 |
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Виробник: Infineon Technologies
Description: THYR / DIODE MODULE DK
Description: THYR / DIODE MODULE DK
товару немає в наявності
В кошику
од. на суму грн.
| TLE42994GXUMA1 |
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Виробник: Infineon Technologies
Description: IC REG LINEAR 5V 150MA DSO8
Description: IC REG LINEAR 5V 150MA DSO8
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| TLE42994GMV33XUMA1 |
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Виробник: Infineon Technologies
Description: IC REG LINEAR 3.3V 150MA DSO14
Description: IC REG LINEAR 3.3V 150MA DSO14
товару немає в наявності
Мінімальне замовлення: 334 шт
В кошику
од. на суму грн.
| IPD90N08S405ATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 80V 90A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 90A, 10V
Power Dissipation (Max): 144W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TO252-3-313
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 80V 90A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 90A, 10V
Power Dissipation (Max): 144W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TO252-3-313
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 59.99 грн |
| 5000+ | 54.19 грн |
| CY7C1059DV33-12ZSXQ |
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Виробник: Infineon Technologies
Description: IC SRAM 8MBIT PARALLEL 44TSOP II
Packaging: Tube
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 12ns
Memory Interface: Parallel
Access Time: 12 ns
Memory Organization: 1M x 8
DigiKey Programmable: Not Verified
Description: IC SRAM 8MBIT PARALLEL 44TSOP II
Packaging: Tube
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 12ns
Memory Interface: Parallel
Access Time: 12 ns
Memory Organization: 1M x 8
DigiKey Programmable: Not Verified
на замовлення 20430 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 893.15 грн |
| IPD50R2K0CEAUMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 500V 2.4A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 600mA, 13V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 50µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 124 pF @ 100 V
Description: MOSFET N-CH 500V 2.4A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 600mA, 13V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 50µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 124 pF @ 100 V
на замовлення 24537 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 50.68 грн |
| 11+ | 29.89 грн |
| 100+ | 19.24 грн |
| 500+ | 13.76 грн |
| 1000+ | 12.37 грн |
| IPD50R1K4CEAUMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 500V 3.1A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 900mA, 13V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 70µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 178 pF @ 100 V
Description: MOSFET N-CH 500V 3.1A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 900mA, 13V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 70µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 178 pF @ 100 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 15.20 грн |













































