Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (148632) > Сторінка 349 з 2478
Фото | Назва | Виробник | Інформація |
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S2GOPRESSUREDPS310TOBO1 | Infineon Technologies |
![]() Packaging: Box Function: Pressure Type: Sensor Contents: Board(s) Utilized IC / Part: DPS310 Platform: Shield2Go Part Status: Active |
на замовлення 173 шт: термін постачання 21-31 дні (днів) |
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SPB100N04S2-04 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 80A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PG-TO263-3-2 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 172 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7220 pF @ 25 V |
на замовлення 433 шт: термін постачання 21-31 дні (днів) |
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T1080N02TOFXPSA1 | Infineon Technologies |
![]() Packaging: Tray Package / Case: DO-200AA, A-PUK Mounting Type: Clamp On Operating Temperature: -40°C ~ 140°C Structure: Single Current - Hold (Ih) (Max): 200 mA Current - Gate Trigger (Igt) (Max): 200 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 16000A @ 50Hz Number of SCRs, Diodes: 1 SCR Current - On State (It (AV)) (Max): 1078 A Voltage - Gate Trigger (Vgt) (Max): 2 V Part Status: Obsolete Current - On State (It (RMS)) (Max): 2000 A Voltage - Off State: 600 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
T580N02TOFXPSA1 | Infineon Technologies |
![]() Packaging: Tray Package / Case: TO-200AA Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 140°C Structure: Single Current - Hold (Ih) (Max): 200 mA Current - Gate Trigger (Igt) (Max): 150 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 6300A @ 50Hz Number of SCRs, Diodes: 1 SCR Current - On State (It (AV)) (Max): 568 A Voltage - Gate Trigger (Vgt) (Max): 1.4 V Part Status: Obsolete Current - On State (It (RMS)) (Max): 800 A Voltage - Off State: 600 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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SABC161SLM3VAABXUMA1 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: 80-QFP Mounting Type: Surface Mount Speed: 20MHz RAM Size: 2K x 8 Operating Temperature: 0°C ~ 70°C (TA) Oscillator Type: External, Internal Program Memory Type: ROMless Core Processor: C166 Core Size: 16-Bit Voltage - Supply (Vcc/Vdd): 3V ~ 3.6V Connectivity: EBI/EMI, SPI, UART/USART Peripherals: POR, PWM, WDT Supplier Device Package: PG-MQFP-80-7 Part Status: Active Number of I/O: 63 DigiKey Programmable: Not Verified |
на замовлення 662 шт: термін постачання 21-31 дні (днів) |
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BSC100N03MSG | Infineon Technologies |
![]() Packaging: Bulk Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 44A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 30A, 10V Power Dissipation (Max): 2.5W (Ta), 30W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PG-TDSON-8-5 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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BSC100N03LSG | Infineon Technologies |
![]() Packaging: Bulk Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 44A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 30A, 10V Power Dissipation (Max): 2.5W (Ta), 30W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: PG-TDSON-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
IPC60R160C6X1SA1 | Infineon Technologies | Description: MOSFET N-CH BARE DIE |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
IPC60R160C6UNSAWNX6SA1 | Infineon Technologies | Description: MOSFET N-CH BARE DIE |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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KITA2GTC3875VTFTTOBO1 | Infineon Technologies |
![]() Packaging: Bulk Mounting Type: Fixed Function: USB to UART (RS232) Bridge Type: MCU 32-Bit Contents: Board(s), LCD Core Processor: TriCore™ Utilized IC / Part: TC387 Supplied Contents: Board(s) Platform: AURIX TC387 5V TFT Part Status: Active |
на замовлення 36 шт: термін постачання 21-31 дні (днів) |
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BSP60 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: PNP - Darlington Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1mA, 1A Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V Frequency - Transition: 200MHz Supplier Device Package: PG-SOT223-4-21 Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 1.5 W |
на замовлення 33700 шт: термін постачання 21-31 дні (днів) |
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BSP60E6327 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: PNP - Darlington Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1mA, 1A Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V Frequency - Transition: 200MHz Supplier Device Package: PG-SOT223-4-21 Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 1.5 W |
на замовлення 24430 шт: термін постачання 21-31 дні (днів) |
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BSP603S2LNT | Infineon Technologies |
![]() Packaging: Bulk Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta) Rds On (Max) @ Id, Vgs: 33mOhm @ 2.6A, 10V Power Dissipation (Max): 1.8W (Ta) Vgs(th) (Max) @ Id: 2V @ 50µA Supplier Device Package: PG-SOT223-4-21 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1390 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 30123 шт: термін постачання 21-31 дні (днів) |
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BSP60H6327XTSA1 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: PNP - Darlington Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1mA, 1A Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V Frequency - Transition: 200MHz Supplier Device Package: PG-SOT223-4 Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 1.5 W |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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BSP 60 E6433 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: PNP - Darlington Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1mA, 1A Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V Frequency - Transition: 200MHz Supplier Device Package: PG-SOT223-4 Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 1.5 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BSP61E6327HTSA1 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: PNP - Darlington Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1mA, 1A Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V Frequency - Transition: 200MHz Supplier Device Package: PG-SOT223-4 Part Status: Obsolete Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 1.5 W |
на замовлення 32000 шт: термін постачання 21-31 дні (днів) |
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BSP61E6327 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: PNP - Darlington Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1mA, 1A Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V Frequency - Transition: 200MHz Supplier Device Package: PG-SOT223 Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 1.5 W |
на замовлення 18000 шт: термін постачання 21-31 дні (днів) |
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BFR 360L3E6765 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: SC-101, SOT-883 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Gain: 16dB Power - Max: 210mW Current - Collector (Ic) (Max): 35mA Voltage - Collector Emitter Breakdown (Max): 6V DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 15mA, 3V Frequency - Transition: 14GHz Noise Figure (dB Typ @ f): 1dB ~ 1.3dB @ 1.8GHz ~ 3GHz Supplier Device Package: PG-TSLP-3-1 Part Status: Active |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
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BFR360L3E6765 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: SC-101, SOT-883 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Gain: 11.5dB ~ 16dB Power - Max: 210mW Current - Collector (Ic) (Max): 35mA Voltage - Collector Emitter Breakdown (Max): 9V DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 15mA, 3V Frequency - Transition: 14GHz Noise Figure (dB Typ @ f): 1dB ~ 1.3dB @ 1.8GHz ~ 3GHz Supplier Device Package: PG-TSLP-3-1 Part Status: Active |
на замовлення 41726 шт: термін постачання 21-31 дні (днів) |
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TC336LP32F200SAAKXUMA1 | Infineon Technologies |
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товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
IRLML6402TRPBF-1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta) Rds On (Max) @ Id, Vgs: 65mOhm @ 3.7A, 4.5V Power Dissipation (Max): 1.3W (Ta) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: Micro3™/SOT-23 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 633 pF @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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6MS24017E33W31361NOSA1 | Infineon Technologies | Description: IGBT MODULE 1700V A-MS3-1 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
BAT18-05E6327 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Diode Type: PIN - 1 Pair Common Cathode Operating Temperature: 150°C (TJ) Capacitance @ Vr, F: 1pF @ 20V, 1MHz Resistance @ If, F: 700mOhm @ 5mA, 200MHz Voltage - Peak Reverse (Max): 35V Supplier Device Package: PG-SOT23 Part Status: Active Current - Max: 100 mA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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BAT1805E6327HTSA1 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Operating Temperature: 150°C (TJ) Capacitance @ Vr, F: 1pF @ 20V, 1MHz Resistance @ If, F: 700mOhm @ 5mA, 200MHz Voltage - Peak Reverse (Max): 35V Supplier Device Package: PG-SOT23 Part Status: Active Current - Max: 100 mA |
на замовлення 47248 шт: термін постачання 21-31 дні (днів) |
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BAT1805E6327 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 120 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 100mA (DC) Supplier Device Package: PG-SOT23 Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 35 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Current - Reverse Leakage @ Vr: 20 nA @ 20 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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IPZ60R037P7XKSA1 | Infineon Technologies |
Description: MOSFET N-CH 650V 76A TO247-4 Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 76A (Tc) Rds On (Max) @ Id, Vgs: 37mOhm @ 29.5A, 10V Power Dissipation (Max): 255W (Tc) Vgs(th) (Max) @ Id: 4V @ 1.48mA Supplier Device Package: PG-TO247-4 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5243 pF @ 400 V |
на замовлення 938 шт: термін постачання 21-31 дні (днів) |
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IPZ60R041P6FKSA1 | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 77.5A (Tc) Rds On (Max) @ Id, Vgs: 41mOhm @ 35.5A, 10V Power Dissipation (Max): 481W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 2.96mA Supplier Device Package: PG-TO247-4 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8180 pF @ 100 V |
на замовлення 13435 шт: термін постачання 21-31 дні (днів) |
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CY7C1412AV18-200BZC | Infineon Technologies |
![]() Packaging: Tray Package / Case: 165-LBGA Mounting Type: Surface Mount Memory Size: 36Mbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 1.7V ~ 1.9V Technology: SRAM - Synchronous, QDR II Clock Frequency: 200 MHz Memory Format: SRAM Supplier Device Package: 165-FBGA (15x17) Memory Interface: Parallel Memory Organization: 2M x 18 DigiKey Programmable: Not Verified |
на замовлення 717 шт: термін постачання 21-31 дні (днів) |
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CY7C1415BV18-200BZXC | Infineon Technologies |
![]() Packaging: Tray Package / Case: 165-LBGA Mounting Type: Surface Mount Memory Size: 36Mbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 1.7V ~ 1.9V Technology: SRAM - Synchronous, QDR II Clock Frequency: 200 MHz Memory Format: SRAM Supplier Device Package: 165-FBGA (15x17) Memory Interface: Parallel Memory Organization: 1M x 36 DigiKey Programmable: Not Verified |
на замовлення 467 шт: термін постачання 21-31 дні (днів) |
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CY7C1412BV18-167BZC | Infineon Technologies |
![]() Packaging: Tray Package / Case: 165-LBGA Mounting Type: Surface Mount Memory Size: 36Mbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 1.7V ~ 1.9V Technology: SRAM - Synchronous, QDR II Clock Frequency: 167 MHz Memory Format: SRAM Supplier Device Package: 165-FBGA (15x17) Memory Interface: Parallel Memory Organization: 2M x 18 DigiKey Programmable: Not Verified |
на замовлення 273 шт: термін постачання 21-31 дні (днів) |
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DT430N22KOFHPSA1 | Infineon Technologies |
Description: SCR MODULE PB60-1 Packaging: Tray Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
IPP042N03L G | Infineon Technologies |
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на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | |||||||||||||||
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TLE4276DVNTMA1 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: TO-263-6, D²Pak (5 Leads + Tab), TO-263BA Output Type: Adjustable Mounting Type: Surface Mount Current - Output: 400mA Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 220 µA Voltage - Input (Max): 40V Number of Regulators: 1 Supplier Device Package: PG-TO263-5-1 Voltage - Output (Max): 20V Voltage - Output (Min/Fixed): 2.5V Control Features: Inhibit Part Status: Active PSRR: 54dB (100Hz) Voltage Dropout (Max): 0.5V @ 250mA Protection Features: Antisaturation, Over Temperature, Reverse Polarity, Short Circuit Current - Supply (Max): 25 mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IRFI4905 | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 41A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 22A, 10V Power Dissipation (Max): 63W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Full-Pak Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
IRFC4905B | Infineon Technologies |
Description: MOSFET 55V 42A DIE Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) Current - Continuous Drain (Id) @ 25°C: 42A Rds On (Max) @ Id, Vgs: 20mOhm @ 42A, 10V Supplier Device Package: Die Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Drain to Source Voltage (Vdss): 55 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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IR3889MTRPBFAUMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 36-PowerVFQFN Output Type: Adjustable Mounting Type: Surface Mount Number of Outputs: 1 Function: Step-Down Current - Output: 30A Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Positive Frequency - Switching: 600kHz ~ 2MHz Voltage - Input (Max): 17V Topology: Buck Supplier Device Package: PG-IQFN-36-2 Synchronous Rectifier: Yes Voltage - Output (Max): 17V Voltage - Input (Min): 2V Voltage - Output (Min/Fixed): 0.8V Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IR3889MTRPBFAUMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 36-PowerVFQFN Output Type: Adjustable Mounting Type: Surface Mount Number of Outputs: 1 Function: Step-Down Current - Output: 30A Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Positive Frequency - Switching: 600kHz ~ 2MHz Voltage - Input (Max): 17V Topology: Buck Supplier Device Package: PG-IQFN-36-2 Synchronous Rectifier: Yes Voltage - Output (Max): 17V Voltage - Input (Min): 2V Voltage - Output (Min/Fixed): 0.8V Part Status: Active |
на замовлення 59 шт: термін постачання 21-31 дні (днів) |
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IPN80R2K0P7ATMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Rds On (Max) @ Id, Vgs: 2Ohm @ 940mA, 10V Power Dissipation (Max): 6.4W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 50µA Supplier Device Package: PG-SOT223 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 175 pF @ 500 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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IPN80R2K0P7ATMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Rds On (Max) @ Id, Vgs: 2Ohm @ 940mA, 10V Power Dissipation (Max): 6.4W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 50µA Supplier Device Package: PG-SOT223 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 175 pF @ 500 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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BGA612H6327 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: SC-82A, SOT-343 Mounting Type: Surface Mount Frequency: 500MHz ~ 6GHz RF Type: 802.15/Bluetooth, ISM, WLAN, GSM, GPS, DCS, UMTS Voltage - Supply: 2.75V Gain: 15dB Current - Supply: 10mA Noise Figure: 1dB P1dB: -16.5dBm Test Frequency: 1.575GHz Supplier Device Package: PG-SOT343-4 Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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2EDL05I06PFXUMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 10V ~ 20V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 600 V Supplier Device Package: PG-DSO-8 Rise / Fall Time (Typ): 48ns, 24ns Channel Type: Independent Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: IGBT Logic Voltage - VIL, VIH: 1.1V, 1.7V Current - Peak Output (Source, Sink): 500mA, 500mA Part Status: Active DigiKey Programmable: Not Verified |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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2EDL05I06PFXUMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 10V ~ 20V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 600 V Supplier Device Package: PG-DSO-8 Rise / Fall Time (Typ): 48ns, 24ns Channel Type: Independent Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: IGBT Logic Voltage - VIL, VIH: 1.1V, 1.7V Current - Peak Output (Source, Sink): 500mA, 500mA Part Status: Active DigiKey Programmable: Not Verified |
на замовлення 3742 шт: термін постачання 21-31 дні (днів) |
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SAF-C505CA-LMCA | Infineon Technologies |
![]() Packaging: Bulk Package / Case: 44-QFP Mounting Type: Surface Mount Speed: 20MHz RAM Size: 1.25K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: External Program Memory Type: ROMless Core Processor: C500 Data Converters: A/D 8x10b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 4.25V ~ 5.5V Connectivity: CANbus, EBI/EMI, UART/USART Peripherals: POR, PWM, WDT Supplier Device Package: PG-MQFP-44-2 Part Status: Active Number of I/O: 34 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SAFC505CALMCA | Infineon Technologies |
![]() Packaging: Bulk Package / Case: 44-QFP Mounting Type: Surface Mount Speed: 20MHz RAM Size: 1.25K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: External Program Memory Type: ROMless Core Processor: C500 Data Converters: A/D 8x10b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 4.25V ~ 5.5V Connectivity: CANbus, EBI/EMI, UART/USART Peripherals: POR, PWM, WDT Supplier Device Package: PG-MQFP-44-2 Part Status: Active Number of I/O: 34 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TC264D40F200NBCKXUMA2 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 144-LQFP Exposed Pad Mounting Type: Surface Mount Speed: 200MHz Program Memory Size: 2.5MB (2.5M x 8) RAM Size: 240K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: External Program Memory Type: FLASH EEPROM Size: 96K x 8 Core Processor: TriCore™ Data Converters: A/D 48x12b SAR, 3 x Sigma-Delta Core Size: 32-Bit Dual-Core Voltage - Supply (Vcc/Vdd): 3.3V, 5V Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT Peripherals: DMA, WDT Supplier Device Package: PG-LQFP-144-22 Part Status: Active Number of I/O: 88 DigiKey Programmable: Not Verified |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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TC264D40F200NBCKXUMA2 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 144-LQFP Exposed Pad Mounting Type: Surface Mount Speed: 200MHz Program Memory Size: 2.5MB (2.5M x 8) RAM Size: 240K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: External Program Memory Type: FLASH EEPROM Size: 96K x 8 Core Processor: TriCore™ Data Converters: A/D 48x12b SAR, 3 x Sigma-Delta Core Size: 32-Bit Dual-Core Voltage - Supply (Vcc/Vdd): 3.3V, 5V Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT Peripherals: DMA, WDT Supplier Device Package: PG-LQFP-144-22 Part Status: Active Number of I/O: 88 DigiKey Programmable: Not Verified |
на замовлення 1817 шт: термін постачання 21-31 дні (днів) |
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ITS436L2SHKSA1 | Infineon Technologies |
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на замовлення 3879 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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BTS430K2E3122A | Infineon Technologies |
![]() Features: Auto Restart, Slew Rate Controlled Packaging: Bulk Package / Case: TO-263-6, D²Pak (5 Leads + Tab), TO-263BA Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: High Side Rds On (Typ): 30mOhm Input Type: Non-Inverting Voltage - Load: 4.5V ~ 32V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 36A Ratio - Input:Output: 1:1 Supplier Device Package: P-TO220-5-122 Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BTS436L2GNTMA1 | Infineon Technologies |
![]() Features: Slew Rate Controlled Packaging: Bulk Package / Case: TO-263-5, D²Pak (4 Leads + Tab), TO-263BB Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: High Side Rds On (Typ): 35mOhm Input Type: Non-Inverting Voltage - Load: 4.75V ~ 41V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 9.8A Ratio - Input:Output: 1:1 Supplier Device Package: PG-TO263-5-2 Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Load, Over Temperature, Over Voltage, Short Circuit, UVLO Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BFR182E-6327 | Infineon Technologies |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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CY62256LL-55ZXI | Infineon Technologies |
![]() Packaging: Tray Package / Case: 28-TSSOP (0.465", 11.80mm Width) Mounting Type: Surface Mount Memory Size: 256Kbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 4.5V ~ 5.5V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 28-TSOP I Write Cycle Time - Word, Page: 55ns Memory Interface: Parallel Access Time: 55 ns Memory Organization: 32K x 8 DigiKey Programmable: Not Verified |
на замовлення 2542 шт: термін постачання 21-31 дні (днів) |
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CY62256EV18LL-70SNXI | Infineon Technologies |
![]() Packaging: Tube Package / Case: 28-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Memory Size: 256Kbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2.25V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 28-SOIC Write Cycle Time - Word, Page: 70ns Memory Interface: Parallel Access Time: 70 ns Memory Organization: 32K x 8 DigiKey Programmable: Not Verified |
на замовлення 7365 шт: термін постачання 21-31 дні (днів) |
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CY62256VNLL-70ZRXE | Infineon Technologies |
![]() Packaging: Tube Package / Case: 28-TSSOP (0.465", 11.80mm Width) Mounting Type: Surface Mount Memory Size: 256Kbit Memory Type: Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 28-TSOP I Write Cycle Time - Word, Page: 70ns Memory Interface: Parallel Access Time: 70 ns Memory Organization: 32K x 8 DigiKey Programmable: Not Verified |
на замовлення 4968 шт: термін постачання 21-31 дні (днів) |
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2EDF9275FXUMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 20V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 650 V Supplier Device Package: PG-DSO-16-11 Rise / Fall Time (Typ): 6.5ns, 4.5ns Channel Type: Independent Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: IGBT, SiC MOSFET Logic Voltage - VIL, VIH: -, 1.65V Current - Peak Output (Source, Sink): 4A, 8A Part Status: Active DigiKey Programmable: Not Verified |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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2EDF9275FXUMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 16-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 20V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 650 V Supplier Device Package: PG-DSO-16-11 Rise / Fall Time (Typ): 6.5ns, 4.5ns Channel Type: Independent Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: IGBT, SiC MOSFET Logic Voltage - VIL, VIH: -, 1.65V Current - Peak Output (Source, Sink): 4A, 8A Part Status: Active DigiKey Programmable: Not Verified |
на замовлення 3588 шт: термін постачання 21-31 дні (днів) |
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FS200R12PT4BOSA1 | Infineon Technologies |
![]() Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 150°C Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 200A NTC Thermistor: Yes Supplier Device Package: Module IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 280 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 1000 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 14 nF @ 25 V |
на замовлення 21 шт: термін постачання 21-31 дні (днів) |
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BTS611L1E3128ANTMA1 | Infineon Technologies |
![]() Packaging: Bulk Features: Auto Restart, Slew Rate Controlled Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 2 Interface: Logic Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: High Side Rds On (Typ): 160mOhm Input Type: Non-Inverting Voltage - Load: 5V ~ 34V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 4.4A Ratio - Input:Output: 1:1 Supplier Device Package: P-TO263-7-2 Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, Short Circuit, UVLO Part Status: Active |
на замовлення 71296 шт: термін постачання 21-31 дні (днів) |
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BSC0910NDIATMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Asymmetrical Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1W Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 11A, 31A Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 12V Rds On (Max) @ Id, Vgs: 4.6mOhm @ 25A, 10V Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 4.5V FET Feature: Logic Level Gate, 4.5V Drive Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PG-TISON-8 Part Status: Active |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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BSC0910NDIATMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Asymmetrical Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1W Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 11A, 31A Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 12V Rds On (Max) @ Id, Vgs: 4.6mOhm @ 25A, 10V Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 4.5V FET Feature: Logic Level Gate, 4.5V Drive Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PG-TISON-8 Part Status: Active |
на замовлення 10182 шт: термін постачання 21-31 дні (днів) |
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BSP372NH6327XTSA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta) Rds On (Max) @ Id, Vgs: 230mOhm @ 1.8A, 10V Power Dissipation (Max): 1.8W (Ta) Vgs(th) (Max) @ Id: 1.8V @ 218µA Supplier Device Package: PG-SOT223-4 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 14.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 329 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 5940 шт: термін постачання 21-31 дні (днів) |
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S2GOPRESSUREDPS310TOBO1 |
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Виробник: Infineon Technologies
Description: EVAL PRESSURE DPS310
Packaging: Box
Function: Pressure
Type: Sensor
Contents: Board(s)
Utilized IC / Part: DPS310
Platform: Shield2Go
Part Status: Active
Description: EVAL PRESSURE DPS310
Packaging: Box
Function: Pressure
Type: Sensor
Contents: Board(s)
Utilized IC / Part: DPS310
Platform: Shield2Go
Part Status: Active
на замовлення 173 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
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1+ | 599.24 грн |
SPB100N04S2-04 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 100A TO263-3
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 172 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7220 pF @ 25 V
Description: MOSFET N-CH 40V 100A TO263-3
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 172 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7220 pF @ 25 V
на замовлення 433 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
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189+ | 120.02 грн |
T1080N02TOFXPSA1 |
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Виробник: Infineon Technologies
Description: SCR MODULE 600V 2000A DO200AA
Packaging: Tray
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 140°C
Structure: Single
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 16000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 1078 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 2000 A
Voltage - Off State: 600 V
Description: SCR MODULE 600V 2000A DO200AA
Packaging: Tray
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 140°C
Structure: Single
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 16000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 1078 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 2000 A
Voltage - Off State: 600 V
товару немає в наявності
В кошику
од. на суму грн.
T580N02TOFXPSA1 |
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Виробник: Infineon Technologies
Description: SCR MODULE 600V 800A DO200AA
Packaging: Tray
Package / Case: TO-200AA
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C
Structure: Single
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 6300A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 568 A
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 800 A
Voltage - Off State: 600 V
Description: SCR MODULE 600V 800A DO200AA
Packaging: Tray
Package / Case: TO-200AA
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C
Structure: Single
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 6300A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 568 A
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 800 A
Voltage - Off State: 600 V
товару немає в наявності
В кошику
од. на суму грн.
SABC161SLM3VAABXUMA1 |
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Виробник: Infineon Technologies
Description: LEGACY 16-BIT MCU
Packaging: Bulk
Package / Case: 80-QFP
Mounting Type: Surface Mount
Speed: 20MHz
RAM Size: 2K x 8
Operating Temperature: 0°C ~ 70°C (TA)
Oscillator Type: External, Internal
Program Memory Type: ROMless
Core Processor: C166
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 3.6V
Connectivity: EBI/EMI, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: PG-MQFP-80-7
Part Status: Active
Number of I/O: 63
DigiKey Programmable: Not Verified
Description: LEGACY 16-BIT MCU
Packaging: Bulk
Package / Case: 80-QFP
Mounting Type: Surface Mount
Speed: 20MHz
RAM Size: 2K x 8
Operating Temperature: 0°C ~ 70°C (TA)
Oscillator Type: External, Internal
Program Memory Type: ROMless
Core Processor: C166
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 3.6V
Connectivity: EBI/EMI, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: PG-MQFP-80-7
Part Status: Active
Number of I/O: 63
DigiKey Programmable: Not Verified
на замовлення 662 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
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63+ | 359.30 грн |
BSC100N03MSG |
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Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 44A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 15 V
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 44A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 15 V
товару немає в наявності
В кошику
од. на суму грн.
BSC100N03LSG |
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Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 44A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 15 V
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 44A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 15 V
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IPC60R160C6X1SA1 |
Виробник: Infineon Technologies
Description: MOSFET N-CH BARE DIE
Description: MOSFET N-CH BARE DIE
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IPC60R160C6UNSAWNX6SA1 |
Виробник: Infineon Technologies
Description: MOSFET N-CH BARE DIE
Description: MOSFET N-CH BARE DIE
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KITA2GTC3875VTFTTOBO1 |
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Виробник: Infineon Technologies
Description: AURIX TC387 5V TFT EVAL BRD
Packaging: Bulk
Mounting Type: Fixed
Function: USB to UART (RS232) Bridge
Type: MCU 32-Bit
Contents: Board(s), LCD
Core Processor: TriCore™
Utilized IC / Part: TC387
Supplied Contents: Board(s)
Platform: AURIX TC387 5V TFT
Part Status: Active
Description: AURIX TC387 5V TFT EVAL BRD
Packaging: Bulk
Mounting Type: Fixed
Function: USB to UART (RS232) Bridge
Type: MCU 32-Bit
Contents: Board(s), LCD
Core Processor: TriCore™
Utilized IC / Part: TC387
Supplied Contents: Board(s)
Platform: AURIX TC387 5V TFT
Part Status: Active
на замовлення 36 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 20447.53 грн |
BSP60 |
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Виробник: Infineon Technologies
Description: TRANS PNP DARL 45V 1A SOT2234-21
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1mA, 1A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: PG-SOT223-4-21
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 1.5 W
Description: TRANS PNP DARL 45V 1A SOT2234-21
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1mA, 1A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: PG-SOT223-4-21
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 1.5 W
на замовлення 33700 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2077+ | 10.28 грн |
BSP60E6327 |
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Виробник: Infineon Technologies
Description: TRANS PNP DARL 45V 1A SOT223-4
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1mA, 1A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: PG-SOT223-4-21
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 1.5 W
Description: TRANS PNP DARL 45V 1A SOT223-4
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1mA, 1A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: PG-SOT223-4-21
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 1.5 W
на замовлення 24430 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2077+ | 10.69 грн |
BSP603S2LNT |
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Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta)
Rds On (Max) @ Id, Vgs: 33mOhm @ 2.6A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 2V @ 50µA
Supplier Device Package: PG-SOT223-4-21
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1390 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta)
Rds On (Max) @ Id, Vgs: 33mOhm @ 2.6A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 2V @ 50µA
Supplier Device Package: PG-SOT223-4-21
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1390 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 30123 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1039+ | 22.14 грн |
BSP60H6327XTSA1 |
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Виробник: Infineon Technologies
Description: TRANS PNP DARL 45V 1A SOT223-4
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1mA, 1A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: PG-SOT223-4
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 1.5 W
Description: TRANS PNP DARL 45V 1A SOT223-4
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1mA, 1A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: PG-SOT223-4
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 1.5 W
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2049+ | 11.45 грн |
BSP 60 E6433 |
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Виробник: Infineon Technologies
Description: TRANS PNP DARL 45V 1A SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1mA, 1A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: PG-SOT223-4
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 1.5 W
Description: TRANS PNP DARL 45V 1A SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1mA, 1A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: PG-SOT223-4
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 1.5 W
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BSP61E6327HTSA1 |
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Виробник: Infineon Technologies
Description: TRANS PNP DARL 60V 1A SOT223-4
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1mA, 1A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: PG-SOT223-4
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.5 W
Description: TRANS PNP DARL 60V 1A SOT223-4
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1mA, 1A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: PG-SOT223-4
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.5 W
на замовлення 32000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2597+ | 9.16 грн |
BSP61E6327 |
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Виробник: Infineon Technologies
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1mA, 1A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: PG-SOT223
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.5 W
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1mA, 1A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: PG-SOT223
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.5 W
на замовлення 18000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1598+ | 14.34 грн |
BFR 360L3E6765 |
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Виробник: Infineon Technologies
Description: LOW-NOISE TRANSISTOR
Packaging: Bulk
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 16dB
Power - Max: 210mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 6V
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 15mA, 3V
Frequency - Transition: 14GHz
Noise Figure (dB Typ @ f): 1dB ~ 1.3dB @ 1.8GHz ~ 3GHz
Supplier Device Package: PG-TSLP-3-1
Part Status: Active
Description: LOW-NOISE TRANSISTOR
Packaging: Bulk
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 16dB
Power - Max: 210mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 6V
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 15mA, 3V
Frequency - Transition: 14GHz
Noise Figure (dB Typ @ f): 1dB ~ 1.3dB @ 1.8GHz ~ 3GHz
Supplier Device Package: PG-TSLP-3-1
Part Status: Active
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3073+ | 7.96 грн |
BFR360L3E6765 |
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Виробник: Infineon Technologies
Description: LOW-NOISE SI TRANSISTOR
Packaging: Bulk
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 11.5dB ~ 16dB
Power - Max: 210mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 9V
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 15mA, 3V
Frequency - Transition: 14GHz
Noise Figure (dB Typ @ f): 1dB ~ 1.3dB @ 1.8GHz ~ 3GHz
Supplier Device Package: PG-TSLP-3-1
Part Status: Active
Description: LOW-NOISE SI TRANSISTOR
Packaging: Bulk
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 11.5dB ~ 16dB
Power - Max: 210mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 9V
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 15mA, 3V
Frequency - Transition: 14GHz
Noise Figure (dB Typ @ f): 1dB ~ 1.3dB @ 1.8GHz ~ 3GHz
Supplier Device Package: PG-TSLP-3-1
Part Status: Active
на замовлення 41726 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3073+ | 7.96 грн |
TC336LP32F200SAAKXUMA1 |
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Виробник: Infineon Technologies
Description: AURIX 2G
Description: AURIX 2G
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од. на суму грн.
IRLML6402TRPBF-1 |
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Виробник: Infineon Technologies
Description: MOSFET P-CH 20V 3.7A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.7A, 4.5V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: Micro3™/SOT-23
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 633 pF @ 10 V
Description: MOSFET P-CH 20V 3.7A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.7A, 4.5V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: Micro3™/SOT-23
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 633 pF @ 10 V
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6MS24017E33W31361NOSA1 |
Виробник: Infineon Technologies
Description: IGBT MODULE 1700V A-MS3-1
Description: IGBT MODULE 1700V A-MS3-1
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од. на суму грн.
BAT18-05E6327 |
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Виробник: Infineon Technologies
Description: PIN DIODE, 35V V(BR)
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: PIN - 1 Pair Common Cathode
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 1pF @ 20V, 1MHz
Resistance @ If, F: 700mOhm @ 5mA, 200MHz
Voltage - Peak Reverse (Max): 35V
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Max: 100 mA
Description: PIN DIODE, 35V V(BR)
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: PIN - 1 Pair Common Cathode
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 1pF @ 20V, 1MHz
Resistance @ If, F: 700mOhm @ 5mA, 200MHz
Voltage - Peak Reverse (Max): 35V
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Max: 100 mA
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од. на суму грн.
BAT1805E6327HTSA1 |
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Виробник: Infineon Technologies
Description: RF DIODE 35V PG-SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 1pF @ 20V, 1MHz
Resistance @ If, F: 700mOhm @ 5mA, 200MHz
Voltage - Peak Reverse (Max): 35V
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Max: 100 mA
Description: RF DIODE 35V PG-SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 1pF @ 20V, 1MHz
Resistance @ If, F: 700mOhm @ 5mA, 200MHz
Voltage - Peak Reverse (Max): 35V
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Max: 100 mA
на замовлення 47248 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1420+ | 15.41 грн |
BAT1805E6327 |
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Виробник: Infineon Technologies
Description: PIN DIODE, 35V V(BR)
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 120 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100mA (DC)
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 20 nA @ 20 V
Description: PIN DIODE, 35V V(BR)
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 120 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100mA (DC)
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 20 nA @ 20 V
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IPZ60R037P7XKSA1 |
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 76A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
Rds On (Max) @ Id, Vgs: 37mOhm @ 29.5A, 10V
Power Dissipation (Max): 255W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.48mA
Supplier Device Package: PG-TO247-4
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5243 pF @ 400 V
Description: MOSFET N-CH 650V 76A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
Rds On (Max) @ Id, Vgs: 37mOhm @ 29.5A, 10V
Power Dissipation (Max): 255W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.48mA
Supplier Device Package: PG-TO247-4
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5243 pF @ 400 V
на замовлення 938 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
53+ | 433.48 грн |
IPZ60R041P6FKSA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 77.5A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 77.5A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 35.5A, 10V
Power Dissipation (Max): 481W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 2.96mA
Supplier Device Package: PG-TO247-4
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8180 pF @ 100 V
Description: MOSFET N-CH 600V 77.5A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 77.5A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 35.5A, 10V
Power Dissipation (Max): 481W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 2.96mA
Supplier Device Package: PG-TO247-4
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8180 pF @ 100 V
на замовлення 13435 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
45+ | 498.69 грн |
CY7C1412AV18-200BZC |
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Виробник: Infineon Technologies
Description: IC SRAM 36MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Memory Interface: Parallel
Memory Organization: 2M x 18
DigiKey Programmable: Not Verified
Description: IC SRAM 36MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Memory Interface: Parallel
Memory Organization: 2M x 18
DigiKey Programmable: Not Verified
на замовлення 717 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
7+ | 3295.79 грн |
CY7C1415BV18-200BZXC |
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Виробник: Infineon Technologies
Description: IC SRAM 36MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Memory Interface: Parallel
Memory Organization: 1M x 36
DigiKey Programmable: Not Verified
Description: IC SRAM 36MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Memory Interface: Parallel
Memory Organization: 1M x 36
DigiKey Programmable: Not Verified
на замовлення 467 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
7+ | 3295.79 грн |
CY7C1412BV18-167BZC |
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Виробник: Infineon Technologies
Description: IC SRAM 36MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 167 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Memory Interface: Parallel
Memory Organization: 2M x 18
DigiKey Programmable: Not Verified
Description: IC SRAM 36MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 167 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Memory Interface: Parallel
Memory Organization: 2M x 18
DigiKey Programmable: Not Verified
на замовлення 273 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
7+ | 3342.63 грн |
IPP042N03L G |
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Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Description: N-CHANNEL POWER MOSFET
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
TLE4276DVNTMA1 |
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Виробник: Infineon Technologies
Description: IC REG LINEAR ADJ LDO REGULATOR
Packaging: Bulk
Package / Case: TO-263-6, D²Pak (5 Leads + Tab), TO-263BA
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 220 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO263-5-1
Voltage - Output (Max): 20V
Voltage - Output (Min/Fixed): 2.5V
Control Features: Inhibit
Part Status: Active
PSRR: 54dB (100Hz)
Voltage Dropout (Max): 0.5V @ 250mA
Protection Features: Antisaturation, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 25 mA
Description: IC REG LINEAR ADJ LDO REGULATOR
Packaging: Bulk
Package / Case: TO-263-6, D²Pak (5 Leads + Tab), TO-263BA
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 220 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO263-5-1
Voltage - Output (Max): 20V
Voltage - Output (Min/Fixed): 2.5V
Control Features: Inhibit
Part Status: Active
PSRR: 54dB (100Hz)
Voltage Dropout (Max): 0.5V @ 250mA
Protection Features: Antisaturation, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 25 mA
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од. на суму грн.
IRFI4905 |
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Виробник: Infineon Technologies
Description: MOSFET P-CH 55V 41A TO220AB FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 22A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB Full-Pak
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 25 V
Description: MOSFET P-CH 55V 41A TO220AB FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 22A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB Full-Pak
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 25 V
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IRFC4905B |
Виробник: Infineon Technologies
Description: MOSFET 55V 42A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: 42A
Rds On (Max) @ Id, Vgs: 20mOhm @ 42A, 10V
Supplier Device Package: Die
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 55 V
Description: MOSFET 55V 42A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: 42A
Rds On (Max) @ Id, Vgs: 20mOhm @ 42A, 10V
Supplier Device Package: Die
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 55 V
товару немає в наявності
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од. на суму грн.
IR3889MTRPBFAUMA1 |
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Виробник: Infineon Technologies
Description: IC REG BUCK ADJ 30A IQFN-36
Packaging: Tape & Reel (TR)
Package / Case: 36-PowerVFQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 30A
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: 600kHz ~ 2MHz
Voltage - Input (Max): 17V
Topology: Buck
Supplier Device Package: PG-IQFN-36-2
Synchronous Rectifier: Yes
Voltage - Output (Max): 17V
Voltage - Input (Min): 2V
Voltage - Output (Min/Fixed): 0.8V
Part Status: Active
Description: IC REG BUCK ADJ 30A IQFN-36
Packaging: Tape & Reel (TR)
Package / Case: 36-PowerVFQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 30A
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: 600kHz ~ 2MHz
Voltage - Input (Max): 17V
Topology: Buck
Supplier Device Package: PG-IQFN-36-2
Synchronous Rectifier: Yes
Voltage - Output (Max): 17V
Voltage - Input (Min): 2V
Voltage - Output (Min/Fixed): 0.8V
Part Status: Active
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од. на суму грн.
IR3889MTRPBFAUMA1 |
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Виробник: Infineon Technologies
Description: IC REG BUCK ADJ 30A IQFN-36
Packaging: Cut Tape (CT)
Package / Case: 36-PowerVFQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 30A
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: 600kHz ~ 2MHz
Voltage - Input (Max): 17V
Topology: Buck
Supplier Device Package: PG-IQFN-36-2
Synchronous Rectifier: Yes
Voltage - Output (Max): 17V
Voltage - Input (Min): 2V
Voltage - Output (Min/Fixed): 0.8V
Part Status: Active
Description: IC REG BUCK ADJ 30A IQFN-36
Packaging: Cut Tape (CT)
Package / Case: 36-PowerVFQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 30A
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: 600kHz ~ 2MHz
Voltage - Input (Max): 17V
Topology: Buck
Supplier Device Package: PG-IQFN-36-2
Synchronous Rectifier: Yes
Voltage - Output (Max): 17V
Voltage - Input (Min): 2V
Voltage - Output (Min/Fixed): 0.8V
Part Status: Active
на замовлення 59 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 388.36 грн |
10+ | 285.00 грн |
25+ | 262.82 грн |
IPN80R2K0P7ATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CHANNEL 800V 3A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 940mA, 10V
Power Dissipation (Max): 6.4W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 50µA
Supplier Device Package: PG-SOT223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 175 pF @ 500 V
Description: MOSFET N-CHANNEL 800V 3A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 940mA, 10V
Power Dissipation (Max): 6.4W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 50µA
Supplier Device Package: PG-SOT223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 175 pF @ 500 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 24.47 грн |
IPN80R2K0P7ATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CHANNEL 800V 3A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 940mA, 10V
Power Dissipation (Max): 6.4W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 50µA
Supplier Device Package: PG-SOT223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 175 pF @ 500 V
Description: MOSFET N-CHANNEL 800V 3A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 940mA, 10V
Power Dissipation (Max): 6.4W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 50µA
Supplier Device Package: PG-SOT223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 175 pF @ 500 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
4+ | 86.74 грн |
10+ | 57.71 грн |
100+ | 38.15 грн |
500+ | 27.89 грн |
1000+ | 25.35 грн |
BGA612H6327 |
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Виробник: Infineon Technologies
Description: IC AMP 802.15 500MHZ-6GHZ SOT343
Packaging: Bulk
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Frequency: 500MHz ~ 6GHz
RF Type: 802.15/Bluetooth, ISM, WLAN, GSM, GPS, DCS, UMTS
Voltage - Supply: 2.75V
Gain: 15dB
Current - Supply: 10mA
Noise Figure: 1dB
P1dB: -16.5dBm
Test Frequency: 1.575GHz
Supplier Device Package: PG-SOT343-4
Part Status: Active
Description: IC AMP 802.15 500MHZ-6GHZ SOT343
Packaging: Bulk
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Frequency: 500MHz ~ 6GHz
RF Type: 802.15/Bluetooth, ISM, WLAN, GSM, GPS, DCS, UMTS
Voltage - Supply: 2.75V
Gain: 15dB
Current - Supply: 10mA
Noise Figure: 1dB
P1dB: -16.5dBm
Test Frequency: 1.575GHz
Supplier Device Package: PG-SOT343-4
Part Status: Active
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од. на суму грн.
2EDL05I06PFXUMA1 |
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Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE DSO8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: PG-DSO-8
Rise / Fall Time (Typ): 48ns, 24ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 500mA, 500mA
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE DSO8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: PG-DSO-8
Rise / Fall Time (Typ): 48ns, 24ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 500mA, 500mA
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2500+ | 43.64 грн |
2EDL05I06PFXUMA1 |
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Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE DSO8
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: PG-DSO-8
Rise / Fall Time (Typ): 48ns, 24ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 500mA, 500mA
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE DSO8
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: PG-DSO-8
Rise / Fall Time (Typ): 48ns, 24ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 500mA, 500mA
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 3742 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
4+ | 89.93 грн |
10+ | 62.92 грн |
25+ | 56.86 грн |
100+ | 47.18 грн |
250+ | 44.23 грн |
500+ | 42.45 грн |
1000+ | 40.31 грн |
SAF-C505CA-LMCA |
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Виробник: Infineon Technologies
Description: IC MCU 8BIT ROMLESS 44MQFP
Packaging: Bulk
Package / Case: 44-QFP
Mounting Type: Surface Mount
Speed: 20MHz
RAM Size: 1.25K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: ROMless
Core Processor: C500
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 4.25V ~ 5.5V
Connectivity: CANbus, EBI/EMI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: PG-MQFP-44-2
Part Status: Active
Number of I/O: 34
Description: IC MCU 8BIT ROMLESS 44MQFP
Packaging: Bulk
Package / Case: 44-QFP
Mounting Type: Surface Mount
Speed: 20MHz
RAM Size: 1.25K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: ROMless
Core Processor: C500
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 4.25V ~ 5.5V
Connectivity: CANbus, EBI/EMI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: PG-MQFP-44-2
Part Status: Active
Number of I/O: 34
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SAFC505CALMCA |
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Виробник: Infineon Technologies
Description: IC MCU 8BIT ROMLESS 44MQFP
Packaging: Bulk
Package / Case: 44-QFP
Mounting Type: Surface Mount
Speed: 20MHz
RAM Size: 1.25K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: ROMless
Core Processor: C500
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 4.25V ~ 5.5V
Connectivity: CANbus, EBI/EMI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: PG-MQFP-44-2
Part Status: Active
Number of I/O: 34
Description: IC MCU 8BIT ROMLESS 44MQFP
Packaging: Bulk
Package / Case: 44-QFP
Mounting Type: Surface Mount
Speed: 20MHz
RAM Size: 1.25K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: ROMless
Core Processor: C500
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 4.25V ~ 5.5V
Connectivity: CANbus, EBI/EMI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: PG-MQFP-44-2
Part Status: Active
Number of I/O: 34
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од. на суму грн.
TC264D40F200NBCKXUMA2 |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 2.5MB FLASH 144LQFP
Packaging: Tape & Reel (TR)
Package / Case: 144-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 2.5MB (2.5M x 8)
RAM Size: 240K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 96K x 8
Core Processor: TriCore™
Data Converters: A/D 48x12b SAR, 3 x Sigma-Delta
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 3.3V, 5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, WDT
Supplier Device Package: PG-LQFP-144-22
Part Status: Active
Number of I/O: 88
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 2.5MB FLASH 144LQFP
Packaging: Tape & Reel (TR)
Package / Case: 144-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 2.5MB (2.5M x 8)
RAM Size: 240K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 96K x 8
Core Processor: TriCore™
Data Converters: A/D 48x12b SAR, 3 x Sigma-Delta
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 3.3V, 5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, WDT
Supplier Device Package: PG-LQFP-144-22
Part Status: Active
Number of I/O: 88
DigiKey Programmable: Not Verified
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1000+ | 2732.27 грн |
TC264D40F200NBCKXUMA2 |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 2.5MB FLASH 144LQFP
Packaging: Cut Tape (CT)
Package / Case: 144-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 2.5MB (2.5M x 8)
RAM Size: 240K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 96K x 8
Core Processor: TriCore™
Data Converters: A/D 48x12b SAR, 3 x Sigma-Delta
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 3.3V, 5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, WDT
Supplier Device Package: PG-LQFP-144-22
Part Status: Active
Number of I/O: 88
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 2.5MB FLASH 144LQFP
Packaging: Cut Tape (CT)
Package / Case: 144-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 2.5MB (2.5M x 8)
RAM Size: 240K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 96K x 8
Core Processor: TriCore™
Data Converters: A/D 48x12b SAR, 3 x Sigma-Delta
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 3.3V, 5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, WDT
Supplier Device Package: PG-LQFP-144-22
Part Status: Active
Number of I/O: 88
DigiKey Programmable: Not Verified
на замовлення 1817 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 4015.66 грн |
10+ | 3179.60 грн |
25+ | 3008.11 грн |
100+ | 2646.11 грн |
250+ | 2561.78 грн |
ITS436L2SHKSA1 |
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Виробник: Infineon Technologies
Description: BUFFER/INVERTER PERIPHL DRIVER
Description: BUFFER/INVERTER PERIPHL DRIVER
на замовлення 3879 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
BTS430K2E3122A |
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Виробник: Infineon Technologies
Description: BUFFER/INVERTER PERIPHL DRIVER
Features: Auto Restart, Slew Rate Controlled
Packaging: Bulk
Package / Case: TO-263-6, D²Pak (5 Leads + Tab), TO-263BA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 30mOhm
Input Type: Non-Inverting
Voltage - Load: 4.5V ~ 32V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 36A
Ratio - Input:Output: 1:1
Supplier Device Package: P-TO220-5-122
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Part Status: Active
Description: BUFFER/INVERTER PERIPHL DRIVER
Features: Auto Restart, Slew Rate Controlled
Packaging: Bulk
Package / Case: TO-263-6, D²Pak (5 Leads + Tab), TO-263BA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 30mOhm
Input Type: Non-Inverting
Voltage - Load: 4.5V ~ 32V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 36A
Ratio - Input:Output: 1:1
Supplier Device Package: P-TO220-5-122
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Part Status: Active
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В кошику
од. на суму грн.
BTS436L2GNTMA1 |
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Виробник: Infineon Technologies
Description: BUFFER/INVERTER PERIPHL DRIVER
Features: Slew Rate Controlled
Packaging: Bulk
Package / Case: TO-263-5, D²Pak (4 Leads + Tab), TO-263BB
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 35mOhm
Input Type: Non-Inverting
Voltage - Load: 4.75V ~ 41V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 9.8A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO263-5-2
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Load, Over Temperature, Over Voltage, Short Circuit, UVLO
Part Status: Active
Description: BUFFER/INVERTER PERIPHL DRIVER
Features: Slew Rate Controlled
Packaging: Bulk
Package / Case: TO-263-5, D²Pak (4 Leads + Tab), TO-263BB
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 35mOhm
Input Type: Non-Inverting
Voltage - Load: 4.75V ~ 41V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 9.8A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO263-5-2
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Load, Over Temperature, Over Voltage, Short Circuit, UVLO
Part Status: Active
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В кошику
од. на суму грн.
BFR182E-6327 |
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Виробник: Infineon Technologies
Description: RF N-CHANNEL MOSFET
Description: RF N-CHANNEL MOSFET
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В кошику
од. на суму грн.
CY62256LL-55ZXI |
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Виробник: Infineon Technologies
Description: IC SRAM 256KBIT PAR 28TSOP I
Packaging: Tray
Package / Case: 28-TSSOP (0.465", 11.80mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 28-TSOP I
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
Description: IC SRAM 256KBIT PAR 28TSOP I
Packaging: Tray
Package / Case: 28-TSSOP (0.465", 11.80mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 28-TSOP I
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
на замовлення 2542 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
124+ | 176.06 грн |
CY62256EV18LL-70SNXI |
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Виробник: Infineon Technologies
Description: IC SRAM 256KBIT PARALLEL 28SOIC
Packaging: Tube
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 2.25V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 28-SOIC
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
Description: IC SRAM 256KBIT PARALLEL 28SOIC
Packaging: Tube
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 2.25V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 28-SOIC
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
на замовлення 7365 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
121+ | 181.15 грн |
CY62256VNLL-70ZRXE |
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Виробник: Infineon Technologies
Description: IC SRAM 256KBIT PAR 28TSOP I
Packaging: Tube
Package / Case: 28-TSSOP (0.465", 11.80mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 28-TSOP I
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
Description: IC SRAM 256KBIT PAR 28TSOP I
Packaging: Tube
Package / Case: 28-TSSOP (0.465", 11.80mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 28-TSOP I
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
на замовлення 4968 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
100+ | 220.44 грн |
2EDF9275FXUMA1 |
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Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-16-11
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, SiC MOSFET
Logic Voltage - VIL, VIH: -, 1.65V
Current - Peak Output (Source, Sink): 4A, 8A
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-16-11
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, SiC MOSFET
Logic Voltage - VIL, VIH: -, 1.65V
Current - Peak Output (Source, Sink): 4A, 8A
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2500+ | 129.57 грн |
2EDF9275FXUMA1 |
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Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-16-11
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, SiC MOSFET
Logic Voltage - VIL, VIH: -, 1.65V
Current - Peak Output (Source, Sink): 4A, 8A
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-16-11
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, SiC MOSFET
Logic Voltage - VIL, VIH: -, 1.65V
Current - Peak Output (Source, Sink): 4A, 8A
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 3588 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 242.72 грн |
10+ | 175.57 грн |
25+ | 160.96 грн |
100+ | 135.97 грн |
250+ | 128.78 грн |
500+ | 124.44 грн |
1000+ | 118.88 грн |
FS200R12PT4BOSA1 |
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Виробник: Infineon Technologies
Description: IGBT MOD 1200V 280A 1000W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 200A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 280 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1000 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 14 nF @ 25 V
Description: IGBT MOD 1200V 280A 1000W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 200A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 280 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1000 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 14 nF @ 25 V
на замовлення 21 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 13530.36 грн |
12+ | 11955.66 грн |
BTS611L1E3128ANTMA1 |
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Виробник: Infineon Technologies
Description: 2 CH HIGH-SIDE POWER SWITCH
Packaging: Bulk
Features: Auto Restart, Slew Rate Controlled
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: Logic
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 160mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 34V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 4.4A
Ratio - Input:Output: 1:1
Supplier Device Package: P-TO263-7-2
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, Short Circuit, UVLO
Part Status: Active
Description: 2 CH HIGH-SIDE POWER SWITCH
Packaging: Bulk
Features: Auto Restart, Slew Rate Controlled
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: Logic
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 160mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 34V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 4.4A
Ratio - Input:Output: 1:1
Supplier Device Package: P-TO263-7-2
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, Short Circuit, UVLO
Part Status: Active
на замовлення 71296 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
137+ | 158.89 грн |
BSC0910NDIATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET 2N-CH 25V 11A/31A TISON8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 11A, 31A
Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 12V
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 25A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 4.5V
FET Feature: Logic Level Gate, 4.5V Drive
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TISON-8
Part Status: Active
Description: MOSFET 2N-CH 25V 11A/31A TISON8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 11A, 31A
Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 12V
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 25A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 4.5V
FET Feature: Logic Level Gate, 4.5V Drive
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TISON-8
Part Status: Active
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
5000+ | 58.23 грн |
BSC0910NDIATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET 2N-CH 25V 11A/31A TISON8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 11A, 31A
Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 12V
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 25A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 4.5V
FET Feature: Logic Level Gate, 4.5V Drive
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TISON-8
Part Status: Active
Description: MOSFET 2N-CH 25V 11A/31A TISON8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 11A, 31A
Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 12V
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 25A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 4.5V
FET Feature: Logic Level Gate, 4.5V Drive
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TISON-8
Part Status: Active
на замовлення 10182 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 184.63 грн |
10+ | 120.47 грн |
100+ | 82.66 грн |
500+ | 62.37 грн |
1000+ | 59.00 грн |
BSP372NH6327XTSA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 1.8A SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Rds On (Max) @ Id, Vgs: 230mOhm @ 1.8A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 218µA
Supplier Device Package: PG-SOT223-4
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 14.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 329 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 100V 1.8A SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Rds On (Max) @ Id, Vgs: 230mOhm @ 1.8A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 218µA
Supplier Device Package: PG-SOT223-4
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 14.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 329 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 5940 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1000+ | 26.28 грн |
2000+ | 19.31 грн |
3000+ | 18.56 грн |
5000+ | 17.13 грн |