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TLF35584QKVS1XUMA2 TLF35584QKVS1XUMA2 Infineon Technologies Infineon-TLF35584QV-ProductOverview-DataSheet-v01_00-EN.pdf?fileId=5546d46279cccfdb0179ce150fc81cbf Description: IC REG AUTO APPL 1OUT LQFP64-18
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP Exposed Pad
Voltage - Output: 5V
Mounting Type: Surface Mount
Number of Outputs: 1
Voltage - Input: 3V ~ 40V
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Power Supply, Automotive Applications
Supplier Device Package: PG-LQFP-64-18
Part Status: Active
на замовлення 1900 шт:
термін постачання 21-31 дні (днів)
1900+291.91 грн
Мінімальне замовлення: 1900
В кошику  од. на суму  грн.
TLF35584QKVS1XUMA2 TLF35584QKVS1XUMA2 Infineon Technologies Infineon-TLF35584QV-ProductOverview-DataSheet-v01_00-EN.pdf?fileId=5546d46279cccfdb0179ce150fc81cbf Description: IC REG AUTO APPL 1OUT LQFP64-18
Packaging: Cut Tape (CT)
Package / Case: 64-LQFP Exposed Pad
Voltage - Output: 5V
Mounting Type: Surface Mount
Number of Outputs: 1
Voltage - Input: 3V ~ 40V
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Power Supply, Automotive Applications
Supplier Device Package: PG-LQFP-64-18
Part Status: Active
на замовлення 2712 шт:
термін постачання 21-31 дні (днів)
1+655.44 грн
10+431.76 грн
100+344.06 грн
В кошику  од. на суму  грн.
IRG4BC30SPBF-INF IRG4BC30SPBF-INF Infineon Technologies IRSDS11001-1.pdf?t.download=true&u=5oefqw Description: IGBT 600V 34A TO-220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 18A
Supplier Device Package: TO-220AB
Td (on/off) @ 25°C: 22ns/540ns
Switching Energy: 260µJ (on), 3.45mJ (off)
Test Condition: 480V, 18A, 23Ohm, 15V
Part Status: Active
Current - Collector (Ic) (Max): 34 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 100 W
на замовлення 5370 шт:
термін постачання 21-31 дні (днів)
188+115.56 грн
Мінімальне замовлення: 188
В кошику  од. на суму  грн.
BAR6304WH6327XTSA1 BAR6304WH6327XTSA1 Infineon Technologies INFNS15694-1.pdf?t.download=true&u=5oefqw Description: RF DIODE PIN 50V 250MW PG-SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Diode Type: PIN - 1 Pair Series Connection
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.3pF @ 5V, 1MHz
Resistance @ If, F: 1Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: PG-SOT323
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
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BAR6304WH6327XTSA1 BAR6304WH6327XTSA1 Infineon Technologies INFNS15694-1.pdf?t.download=true&u=5oefqw Description: RF DIODE PIN 50V 250MW PG-SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Diode Type: PIN - 1 Pair Series Connection
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.3pF @ 5V, 1MHz
Resistance @ If, F: 1Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: PG-SOT323
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
на замовлення 3908 шт:
термін постачання 21-31 дні (днів)
29+11.98 грн
42+7.99 грн
47+7.02 грн
100+5.59 грн
250+5.12 грн
500+4.83 грн
1000+4.52 грн
Мінімальне замовлення: 29
В кошику  од. на суму  грн.
SPI07N60C3XKSA1 SPI07N60C3XKSA1 Infineon Technologies Infineon-SPP_A_I07N60C3-DS-v03_02-en%5B1%5D.pdf?fileId=db3a304412b407950112b42de18b490c Description: MOSFET N-CH 600V 7.3A TO262-3
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.6A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 350µA
Supplier Device Package: PG-TO262-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 25 V
на замовлення 89720 шт:
термін постачання 21-31 дні (днів)
189+117.51 грн
Мінімальне замовлення: 189
В кошику  од. на суму  грн.
IKD04N60RAATMA1 IKD04N60RAATMA1 Infineon Technologies IKD04N60RA.pdf Description: IGBT TRENCH 600V 8A TO252-3
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 43 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 4A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench
Td (on/off) @ 25°C: 14ns/146ns
Switching Energy: 90µJ (on), 150µJ (off)
Test Condition: 400V, 4A, 43Ohm, 15V
Gate Charge: 27 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 12 A
Power - Max: 75 W
на замовлення 1681 шт:
термін постачання 21-31 дні (днів)
324+67.99 грн
Мінімальне замовлення: 324
В кошику  од. на суму  грн.
XC2336A56F80LAAFXUMA1 XC2336A56F80LAAFXUMA1 Infineon Technologies XC2336A_v2.1_2011-07.pdf Description: IC MCU 16/32BIT 448KB FLASH
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XC2336A72F80LRABHXUMA1 XC2336A72F80LRABHXUMA1 Infineon Technologies Description: IC MCU 16BIT 64LQFP
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XC2336A56F80LAAHXUMA1 XC2336A56F80LAAHXUMA1 Infineon Technologies XC2336A_v2.1_2011-07.pdf Description: IC MCU 16BIT 64LQFP
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IRS2183STRPBF IRS2183STRPBF Infineon Technologies irs2183.pdf?fileId=5546d462533600a401535676d20c27d8 Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+66.76 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
IRS2183STRPBF IRS2183STRPBF Infineon Technologies irs2183.pdf?fileId=5546d462533600a401535676d20c27d8 Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 3551 шт:
термін постачання 21-31 дні (днів)
3+132.63 грн
10+93.69 грн
25+85.23 грн
100+71.26 грн
250+67.09 грн
500+64.58 грн
1000+61.49 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IRF60SC241ARMA1 IRF60SC241ARMA1 Infineon Technologies Infineon-IRF60SC241-DataSheet-v01_00-EN.pdf?fileId=5546d4626b2d8e69016b533fb9af0ce7 Description: MOSFET N-CH 60V 360A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 360A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 100A, 10V
Power Dissipation (Max): 2.4W (Ta), 417W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: PG-TO263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 388 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16000 pF @ 30 V
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IPI045N10N3 G Infineon Technologies INFN-S-A0004848105-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 137A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 100A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 150µA
Supplier Device Package: PG-TO262-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8410 pF @ 50 V
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IRF7416TRPBF-1 IRF7416TRPBF-1 Infineon Technologies IRF7416PbF-1_11-19-13.pdf Description: MOSFET P-CH 30V 10A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 5.6A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.04V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
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ICE2PCS02GFUMA1 ICE2PCS02GFUMA1 Infineon Technologies ICE2PCS02_G_2010-03-22.pdf Description: IC PFC CTRLR CCM 65KHZ 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 11V ~ 25V
Frequency - Switching: 65kHz
Mode: Continuous Conduction (CCM)
Supplier Device Package: PG-DSO-8
Part Status: Obsolete
Current - Startup: 450 µA
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2EDF7235KXUMA1 2EDF7235KXUMA1 Infineon Technologies Infineon-2EDF7275F-DS-v02_04-EN.pdf?fileId=5546d462636cc8fb0163b08fd9203057 Description: IC GATE DRVR HALF-BRIDG TFLGA-13
Packaging: Tape & Reel (TR)
Package / Case: 13-TFLGA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 20V
Input Type: Non-Inverting
Supplier Device Package: PG-TFLGA-13-1
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: -, 1.65V
Current - Peak Output (Source, Sink): 4A, 8A
Part Status: Last Time Buy
DigiKey Programmable: Not Verified
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2EDF7235KXUMA1 2EDF7235KXUMA1 Infineon Technologies Infineon-2EDF7275F-DS-v02_04-EN.pdf?fileId=5546d462636cc8fb0163b08fd9203057 Description: IC GATE DRVR HALF-BRIDG TFLGA-13
Packaging: Cut Tape (CT)
Package / Case: 13-TFLGA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 20V
Input Type: Non-Inverting
Supplier Device Package: PG-TFLGA-13-1
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: -, 1.65V
Current - Peak Output (Source, Sink): 4A, 8A
Part Status: Last Time Buy
DigiKey Programmable: Not Verified
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2EDF7275KXUMA1 2EDF7275KXUMA1 Infineon Technologies Infineon-2EDF7175F-DS-v02_00-EN.pdf?fileId=5546d462636cc8fb0163b09026be3060 Description: IC GATE DRVR HALF-BRIDG TFLGA-13
Packaging: Tape & Reel (TR)
Package / Case: 13-TFLGA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 20V
Input Type: Non-Inverting
Supplier Device Package: PG-TFLGA-13-1
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: -, 1.65V
Current - Peak Output (Source, Sink): 4A, 8A
DigiKey Programmable: Not Verified
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
4000+82.51 грн
8000+77.97 грн
Мінімальне замовлення: 4000
В кошику  од. на суму  грн.
2EDF7275KXUMA1 2EDF7275KXUMA1 Infineon Technologies Infineon-2EDF7175F-DS-v02_00-EN.pdf?fileId=5546d462636cc8fb0163b09026be3060 Description: IC GATE DRVR HALF-BRIDG TFLGA-13
Packaging: Cut Tape (CT)
Package / Case: 13-TFLGA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 20V
Input Type: Non-Inverting
Supplier Device Package: PG-TFLGA-13-1
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: -, 1.65V
Current - Peak Output (Source, Sink): 4A, 8A
DigiKey Programmable: Not Verified
на замовлення 8382 шт:
термін постачання 21-31 дні (днів)
3+162.58 грн
10+116.02 грн
25+105.83 грн
100+88.81 грн
250+83.80 грн
500+80.78 грн
1000+77.01 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
2EDF7175FXUMA2 2EDF7175FXUMA2 Infineon Technologies Infineon-2EDF7275F-DS-v02_04-EN.pdf?fileId=5546d462636cc8fb0163b08fd9203057 Description: IC GATE DRVR HALF-BRIDG DSO16
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 20V
Input Type: Non-Inverting
Supplier Device Package: PG-DSO-16-11
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: -, 1.65V
Current - Peak Output (Source, Sink): 1A, 2A
DigiKey Programmable: Not Verified
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)
2500+86.18 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
2EDF7275FXUMA2 2EDF7275FXUMA2 Infineon Technologies Infineon-2EDF7275F-DS-v02_04-EN.pdf?fileId=5546d462636cc8fb0163b08fd9203057 Description: IC GATE DRVR HALF-BRIDG DSO16
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 1500 V
Supplier Device Package: PG-DSO-16-11
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: -, 1.65V
Current - Peak Output (Source, Sink): 4A, 8A
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
2500+95.16 грн
5000+89.77 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
2EDS8165HXUMA1 2EDS8165HXUMA1 Infineon Technologies Infineon-2EDF7175F-DS-v02_00-EN.pdf?fileId=5546d462636cc8fb0163b09026be3060 Description: IC GATE DRVR HALF-BRIDGE 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 20V
Input Type: Non-Inverting
Supplier Device Package: PG-DSO-16-30
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: -, 1.65V
Current - Peak Output (Source, Sink): 1A, 2A
Part Status: Discontinued at Digi-Key
DigiKey Programmable: Not Verified
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2EDS8265HXUMA1 2EDS8265HXUMA1 Infineon Technologies Infineon-2EDF7175F-DS-v02_00-EN.pdf?fileId=5546d462636cc8fb0163b09026be3060 Description: IC GATE DRVR HALF-BRIDGE 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 20V
Input Type: Non-Inverting
Supplier Device Package: PG-DSO-16-30
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: -, 1.65V
Current - Peak Output (Source, Sink): 4A, 8A
Part Status: Discontinued at Digi-Key
DigiKey Programmable: Not Verified
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2EDS8265HXUMA1 2EDS8265HXUMA1 Infineon Technologies Infineon-2EDF7175F-DS-v02_00-EN.pdf?fileId=5546d462636cc8fb0163b09026be3060 Description: IC GATE DRVR HALF-BRIDGE 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 20V
Input Type: Non-Inverting
Supplier Device Package: PG-DSO-16-30
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: -, 1.65V
Current - Peak Output (Source, Sink): 4A, 8A
Part Status: Discontinued at Digi-Key
DigiKey Programmable: Not Verified
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2EDS9265HXUMA1 2EDS9265HXUMA1 Infineon Technologies Infineon-2EDF7275F-DS-v02_04-EN.pdf?fileId=5546d462636cc8fb0163b08fd9203057 Description: IC GATE DRVR HALF-BRIDGE 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-16-30
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, SiC MOSFET
Logic Voltage - VIL, VIH: -, 1.65V
Current - Peak Output (Source, Sink): 4A, 8A
Part Status: Active
DigiKey Programmable: Not Verified
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2EDS9265HXUMA1 2EDS9265HXUMA1 Infineon Technologies Infineon-2EDF7275F-DS-v02_04-EN.pdf?fileId=5546d462636cc8fb0163b08fd9203057 Description: IC GATE DRVR HALF-BRIDGE 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-16-30
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, SiC MOSFET
Logic Voltage - VIL, VIH: -, 1.65V
Current - Peak Output (Source, Sink): 4A, 8A
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 464 шт:
термін постачання 21-31 дні (днів)
3+166.00 грн
10+118.82 грн
25+108.37 грн
100+90.97 грн
250+85.86 грн
Мінімальне замовлення: 3
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2EDS8165HXUMA2 2EDS8165HXUMA2 Infineon Technologies Infineon-2EDF7275F-DS-v02_04-EN.pdf?fileId=5546d462636cc8fb0163b08fd9203057 Description: IC GATE DRVR HALF-BRIDGE 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 20V
Input Type: Non-Inverting
Supplier Device Package: PG-DSO-16-30
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: -, 1.65V
Current - Peak Output (Source, Sink): 1A, 2A
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
1000+88.79 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
2EDS8265HXUMA2 2EDS8265HXUMA2 Infineon Technologies Infineon-2EDF7275F-DS-v02_04-EN.pdf?fileId=5546d462636cc8fb0163b08fd9203057 Description: IC GATE DRVR HALF-BRIDGE 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 20V
Input Type: Non-Inverting
Supplier Device Package: PG-DSO-16-30
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: -, 1.65V
Current - Peak Output (Source, Sink): 4A, 8A
Part Status: Active
DigiKey Programmable: Not Verified
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TLF35584QVVS1XUMA2 TLF35584QVVS1XUMA2 Infineon Technologies Infineon-TLF35584QV-ProductOverview-DataSheet-v01_00-EN.pdf?fileId=5546d46279cccfdb0179ce150fc81cbf Description: IC REG AUTO APPL 1OUT VQFN-48-31
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Voltage - Output: 5V
Mounting Type: Surface Mount
Number of Outputs: 1
Voltage - Input: 3V ~ 40V
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Power Supply, Automotive Applications
Supplier Device Package: PG-VQFN-48-31
Part Status: Active
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TLF35584QVVS1XUMA2 TLF35584QVVS1XUMA2 Infineon Technologies Infineon-TLF35584QV-ProductOverview-DataSheet-v01_00-EN.pdf?fileId=5546d46279cccfdb0179ce150fc81cbf Description: IC REG AUTO APPL 1OUT VQFN-48-31
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Voltage - Output: 5V
Mounting Type: Surface Mount
Number of Outputs: 1
Voltage - Input: 3V ~ 40V
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Power Supply, Automotive Applications
Supplier Device Package: PG-VQFN-48-31
Part Status: Active
на замовлення 1494 шт:
термін постачання 21-31 дні (днів)
1+592.12 грн
10+388.17 грн
100+301.05 грн
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SGW30N60 SGW30N60 Infineon Technologies INFNS14175-1.pdf?t.download=true&u=5oefqw Description: IGBT, 41A I(C), 600V V(BR)CES, N
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
Supplier Device Package: PG-TO247-3-21
IGBT Type: NPT
Td (on/off) @ 25°C: 44ns/291ns
Switching Energy: 640µJ (on), 650µJ (off)
Test Condition: 400V, 30A, 11Ohm, 15V
Gate Charge: 140 nC
Part Status: Active
Current - Collector (Ic) (Max): 41 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 112 A
Power - Max: 250 W
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SPI20N65C3 SPI20N65C3 Infineon Technologies Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
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TLE42712AKSA1 TLE42712AKSA1 Infineon Technologies TLE 4271-2.pdf Description: IC REG LIN 5V 550MA TO220-7-11
Packaging: Bulk
Package / Case: TO-220-7 Formed Leads
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 550mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 6 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: P-TO220-7-11
Voltage - Output (Min/Fixed): 5V
Control Features: Reset, Watchdog
Part Status: Obsolete
PSRR: 54dB (100Hz)
Voltage Dropout (Max): 0.7V @ 550mA
Protection Features: Over Current, Over Temperature, Over Voltage, Reverse Polarity, Short Circuit
Current - Supply (Max): 90 mA
на замовлення 34338 шт:
термін постачання 21-31 дні (днів)
205+119.30 грн
Мінімальне замовлення: 205
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SPD08N50C3 SPD08N50C3 Infineon Technologies Infineon-SPD08N50C3-DS-v02_06-en.pdf?fileId=db3a30433f1b26e8013f1ea5b45f0334 Description: COOLMOS, 7.6A, 500V, 0.6OHM, N-C
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.6A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 350µA
Supplier Device Package: PG-TO252-3-313
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 25 V
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PMB3543E6327XQSA1 Infineon Technologies Description: TELECOM IC
Packaging: Bulk
на замовлення 119 шт:
термін постачання 21-31 дні (днів)
7+3839.97 грн
Мінімальне замовлення: 7
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FS3L200R10W3S7FB11BPSA1 FS3L200R10W3S7FB11BPSA1 Infineon Technologies Infineon-FS3L200R10W3S7F_B11-DataSheet-v03_00-EN.pdf?fileId=5546d46271bf4f920172079cc70479ac Description: IGBT MODULE LOW POWER EASY
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Level Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.55V @ 15V, 25A
NTC Thermistor: Yes
Supplier Device Package: AG-EASY3B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 950 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 31 µA
Input Capacitance (Cies) @ Vce: 6.48 nF @ 25 V
на замовлення 19 шт:
термін постачання 21-31 дні (днів)
1+12555.13 грн
16+10820.18 грн
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F3L400R10W3S7FB11BPSA1 F3L400R10W3S7FB11BPSA1 Infineon Technologies Infineon-F3L400R10W3S7F_B11-DataSheet-v03_00-EN.pdf?fileId=5546d46271bf4f920172078a6a58799d Description: IGBT MODULE LOW POWER EASY
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Level Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 150A
NTC Thermistor: Yes
Supplier Device Package: AG-EASY3B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 220 A
Voltage - Collector Emitter Breakdown (Max): 950 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 71 µA
Input Capacitance (Cies) @ Vce: 49.2 nF @ 25 V
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
1+15520.85 грн
В кошику  од. на суму  грн.
EVAL2ED020I12F2TOBO1 EVAL2ED020I12F2TOBO1 Infineon Technologies Infineon-EVAL_2ED020I12-F2-ApplicationNotes-v01_00-EN.pdf?fileId=db3a304340155f3d014029a78ed602f3 Description: EVAL BOARD FOR 2ED020I12-F2
Packaging: Bulk
Function: Gate Driver
Type: Power Management
Utilized IC / Part: 2ED020I12-F2
Supplied Contents: Board(s)
Part Status: Active
Contents: Board(s)
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
1+7666.73 грн
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KITAURIXTC275ARDSBTOBO1 KITAURIXTC275ARDSBTOBO1 Infineon Technologies Infineon-ShieldBuddy_TC275%20-UM-v02_08-EN.pdf?fileId=5546d46269e1c019016a54f0801a5590 Description: SHIELDBUDDYTC275-AURIX
Packaging: Box
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s), LCD
Core Processor: TriCore™
Utilized IC / Part: TC275
Platform: AURIX
на замовлення 145 шт:
термін постачання 21-31 дні (днів)
1+14514.59 грн
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PTFA181001FV4R250FTMA1 PTFA181001FV4R250FTMA1 Infineon Technologies PTFA181001%28E%2CF%29.pdf Description: RF MOSFET LDMOS 28V H-37248-2
Packaging: Tape & Reel (TR)
Package / Case: 2-Flatpack, Fin Leads, Flanged
Current Rating (Amps): 1µA
Mounting Type: Surface Mount
Frequency: 1.88GHz
Power - Output: 100W
Gain: 16.5dB
Technology: LDMOS
Supplier Device Package: H-37248-2
Voltage - Rated: 65 V
Voltage - Test: 28 V
Current - Test: 750 mA
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IRLR3636TRLPBF IRLR3636TRLPBF Infineon Technologies IRSDS10828-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 60V 50A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 50A, 10V
Power Dissipation (Max): 143W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3779 pF @ 50 V
на замовлення 444 шт:
термін постачання 21-31 дні (днів)
2+187.39 грн
10+116.18 грн
100+79.57 грн
Мінімальне замовлення: 2
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IRFR3504ZTR IRFR3504ZTR Infineon Technologies IRFR3504Z%2C%20IRFU3504Z.pdf Description: MOSFET N-CH 40V 42A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 42A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1510 pF @ 25 V
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IRFR3504ZTRL IRFR3504ZTRL Infineon Technologies IRFR3504Z%2C%20IRFU3504Z.pdf Description: MOSFET N-CH 40V 42A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 42A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1510 pF @ 25 V
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IRFR3504ZTRR IRFR3504ZTRR Infineon Technologies IRFR3504Z,%20IRFU3504Z.pdf Description: MOSFET N-CH 40V 42A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 42A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: D-Pak
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1510 pF @ 25 V
товару немає в наявності
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64-4059PBF 64-4059PBF Infineon Technologies irfr3504zpbf.pdf?fileId=5546d462533600a4015356311d09209b Description: MOSFET N-CH 40V 42A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 42A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1510 pF @ 25 V
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IRFR3504ZTRLPBF IRFR3504ZTRLPBF Infineon Technologies irfr3504zpbf.pdf?fileId=5546d462533600a4015356311d09209b Description: MOSFET N-CH 40V 42A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 42A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1510 pF @ 25 V
товару немає в наявності
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IRFR3504ZTRRPBF IRFR3504ZTRRPBF Infineon Technologies irfr3504zpbf.pdf?fileId=5546d462533600a4015356311d09209b Description: MOSFET N-CH 40V 42A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 42A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1510 pF @ 25 V
товару немає в наявності
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BCR169WE6327 BCR169WE6327 Infineon Technologies INFNS11715-1.pdf?t.download=true&u=5oefqw Description: TRANS PREBIAS PNP 50V SOT323-3
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
Supplier Device Package: PG-SOT323-3-1
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 4.7 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 Only
на замовлення 36000 шт:
термін постачання 21-31 дні (днів)
8955+2.20 грн
Мінімальне замовлення: 8955
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TLF50281ELXUMA1 TLF50281ELXUMA1 Infineon Technologies Infineon-TLF50281EL-DS-v01_01-EN.pdf?fileId=5546d46258fc0bc1015969d2c73f41f2 Description: IC REG BUCK 5V 500MA PGSSOP14
Packaging: Bulk
Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 500mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: 2.2MHz
Voltage - Input (Max): 45V
Topology: Buck
Supplier Device Package: PG-SSOP-14-EP
Synchronous Rectifier: No
Voltage - Input (Min): 4.75V
Voltage - Output (Min/Fixed): 5V
Part Status: Obsolete
Grade: Automotive
Qualification: AEC-Q100
на замовлення 1034 шт:
термін постачання 21-31 дні (днів)
205+105.95 грн
Мінімальне замовлення: 205
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IPD30N06S3-24 IPD30N06S3-24 Infineon Technologies INFNS11065-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drain to Source Voltage (Vdss): 55 V
товару немає в наявності
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IPD230N06LG IPD230N06LG Infineon Technologies INFNS15837-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 2V @ 49µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 30 V
товару немає в наявності
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IPB230N06L3G IPB230N06L3G Infineon Technologies INFNS19526-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 30A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 11µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 30 V
товару немає в наявності
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IPP230N06L3GXKSA1 IPP230N06L3GXKSA1 Infineon Technologies INFNS19526-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A
Rds On (Max) @ Id, Vgs: 23mOhm @ 30A, 10V
Power Dissipation (Max): 36W
Vgs(th) (Max) @ Id: 2.2V @ 11µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 30 V
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
567+38.46 грн
Мінімальне замовлення: 567
В кошику  од. на суму  грн.
IPP230N06L3G IPP230N06L3G Infineon Technologies INFNS19526-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 30A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 11µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 30 V
на замовлення 9620 шт:
термін постачання 21-31 дні (днів)
472+46.44 грн
Мінімальне замовлення: 472
В кошику  од. на суму  грн.
BGA420H6433XTMA1 BGA420H6433XTMA1 Infineon Technologies bga420.pdf?folderId=db3a30431441fb5d0114b654e6581730&fileId=db3a304314dca3890115418cec781637 Description: IC RF AMP GPS 0HZ-3GHZ SOT343-3D
Packaging: Bulk
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Frequency: 0Hz ~ 3GHz
RF Type: General Purpose
Voltage - Supply: 3V ~ 6V
Gain: 13dB
Current - Supply: 6.7mA
Noise Figure: 2.3dB
P1dB: -2.5dBm
Test Frequency: 1GHz
Supplier Device Package: PG-SOT343-3D
Part Status: Obsolete
на замовлення 119220 шт:
термін постачання 21-31 дні (днів)
491+44.77 грн
Мінімальне замовлення: 491
В кошику  од. на суму  грн.
ICE3RBR0665JZXKLA1 ICE3RBR0665JZXKLA1 Infineon Technologies INFNS27653-1.pdf?t.download=true&u=5oefqw Description: IC OFFLINE SWITCH FLYBACK 7DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 65kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10.5V ~ 25V
Supplier Device Package: PG-DIP-7-1
Fault Protection: Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 18 V
Part Status: Active
Power (Watts): 71 W
на замовлення 3885 шт:
термін постачання 21-31 дні (днів)
2+189.96 грн
10+136.12 грн
50+117.42 грн
100+104.75 грн
250+99.01 грн
500+95.56 грн
1000+91.19 грн
2500+88.23 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
ICE3RBR0665JGXUMA1 ICE3RBR0665JGXUMA1 Infineon Technologies Infineon-ICE3RBR0665JG-DS-v01_00-EN.pdf?fileId=5546d46253f6505701549aaf5c8c7514 Description: IC OFFLINE SWITCH FLYBACK 12DSO
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 65kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10.5V ~ 25V
Supplier Device Package: PG-DSO-12-19
Fault Protection: Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 18 V
Part Status: Active
Power (Watts): 66 W
товару немає в наявності
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ICE3RBR0665JGXUMA1 ICE3RBR0665JGXUMA1 Infineon Technologies Infineon-ICE3RBR0665JG-DS-v01_00-EN.pdf?fileId=5546d46253f6505701549aaf5c8c7514 Description: IC OFFLINE SWITCH FLYBACK 12DSO
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 65kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10.5V ~ 25V
Supplier Device Package: PG-DSO-12-19
Fault Protection: Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 18 V
Part Status: Active
Power (Watts): 66 W
на замовлення 2474 шт:
термін постачання 21-31 дні (днів)
2+178.83 грн
10+128.29 грн
25+117.20 грн
100+98.54 грн
250+93.08 грн
500+89.78 грн
1000+85.64 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
FP15R06YE3B4BOMA1 Infineon Technologies Description: MOD IGBT LOW PWR EASY2-1
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TLF35584QKVS1XUMA2 Infineon-TLF35584QV-ProductOverview-DataSheet-v01_00-EN.pdf?fileId=5546d46279cccfdb0179ce150fc81cbf
TLF35584QKVS1XUMA2
Виробник: Infineon Technologies
Description: IC REG AUTO APPL 1OUT LQFP64-18
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP Exposed Pad
Voltage - Output: 5V
Mounting Type: Surface Mount
Number of Outputs: 1
Voltage - Input: 3V ~ 40V
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Power Supply, Automotive Applications
Supplier Device Package: PG-LQFP-64-18
Part Status: Active
на замовлення 1900 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1900+291.91 грн
Мінімальне замовлення: 1900
В кошику  од. на суму  грн.
TLF35584QKVS1XUMA2 Infineon-TLF35584QV-ProductOverview-DataSheet-v01_00-EN.pdf?fileId=5546d46279cccfdb0179ce150fc81cbf
TLF35584QKVS1XUMA2
Виробник: Infineon Technologies
Description: IC REG AUTO APPL 1OUT LQFP64-18
Packaging: Cut Tape (CT)
Package / Case: 64-LQFP Exposed Pad
Voltage - Output: 5V
Mounting Type: Surface Mount
Number of Outputs: 1
Voltage - Input: 3V ~ 40V
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Power Supply, Automotive Applications
Supplier Device Package: PG-LQFP-64-18
Part Status: Active
на замовлення 2712 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+655.44 грн
10+431.76 грн
100+344.06 грн
В кошику  од. на суму  грн.
IRG4BC30SPBF-INF IRSDS11001-1.pdf?t.download=true&u=5oefqw
IRG4BC30SPBF-INF
Виробник: Infineon Technologies
Description: IGBT 600V 34A TO-220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 18A
Supplier Device Package: TO-220AB
Td (on/off) @ 25°C: 22ns/540ns
Switching Energy: 260µJ (on), 3.45mJ (off)
Test Condition: 480V, 18A, 23Ohm, 15V
Part Status: Active
Current - Collector (Ic) (Max): 34 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 100 W
на замовлення 5370 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
188+115.56 грн
Мінімальне замовлення: 188
В кошику  од. на суму  грн.
BAR6304WH6327XTSA1 INFNS15694-1.pdf?t.download=true&u=5oefqw
BAR6304WH6327XTSA1
Виробник: Infineon Technologies
Description: RF DIODE PIN 50V 250MW PG-SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Diode Type: PIN - 1 Pair Series Connection
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.3pF @ 5V, 1MHz
Resistance @ If, F: 1Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: PG-SOT323
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
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BAR6304WH6327XTSA1 INFNS15694-1.pdf?t.download=true&u=5oefqw
BAR6304WH6327XTSA1
Виробник: Infineon Technologies
Description: RF DIODE PIN 50V 250MW PG-SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Diode Type: PIN - 1 Pair Series Connection
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.3pF @ 5V, 1MHz
Resistance @ If, F: 1Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: PG-SOT323
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
на замовлення 3908 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
29+11.98 грн
42+7.99 грн
47+7.02 грн
100+5.59 грн
250+5.12 грн
500+4.83 грн
1000+4.52 грн
Мінімальне замовлення: 29
В кошику  од. на суму  грн.
SPI07N60C3XKSA1 Infineon-SPP_A_I07N60C3-DS-v03_02-en%5B1%5D.pdf?fileId=db3a304412b407950112b42de18b490c
SPI07N60C3XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 7.3A TO262-3
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.6A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 350µA
Supplier Device Package: PG-TO262-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 25 V
на замовлення 89720 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
189+117.51 грн
Мінімальне замовлення: 189
В кошику  од. на суму  грн.
IKD04N60RAATMA1 IKD04N60RA.pdf
IKD04N60RAATMA1
Виробник: Infineon Technologies
Description: IGBT TRENCH 600V 8A TO252-3
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 43 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 4A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench
Td (on/off) @ 25°C: 14ns/146ns
Switching Energy: 90µJ (on), 150µJ (off)
Test Condition: 400V, 4A, 43Ohm, 15V
Gate Charge: 27 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 12 A
Power - Max: 75 W
на замовлення 1681 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
324+67.99 грн
Мінімальне замовлення: 324
В кошику  од. на суму  грн.
XC2336A56F80LAAFXUMA1 XC2336A_v2.1_2011-07.pdf
XC2336A56F80LAAFXUMA1
Виробник: Infineon Technologies
Description: IC MCU 16/32BIT 448KB FLASH
товару немає в наявності
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XC2336A72F80LRABHXUMA1
XC2336A72F80LRABHXUMA1
Виробник: Infineon Technologies
Description: IC MCU 16BIT 64LQFP
товару немає в наявності
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XC2336A56F80LAAHXUMA1 XC2336A_v2.1_2011-07.pdf
XC2336A56F80LAAHXUMA1
Виробник: Infineon Technologies
Description: IC MCU 16BIT 64LQFP
товару немає в наявності
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IRS2183STRPBF irs2183.pdf?fileId=5546d462533600a401535676d20c27d8
IRS2183STRPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+66.76 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
IRS2183STRPBF irs2183.pdf?fileId=5546d462533600a401535676d20c27d8
IRS2183STRPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 3551 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+132.63 грн
10+93.69 грн
25+85.23 грн
100+71.26 грн
250+67.09 грн
500+64.58 грн
1000+61.49 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IRF60SC241ARMA1 Infineon-IRF60SC241-DataSheet-v01_00-EN.pdf?fileId=5546d4626b2d8e69016b533fb9af0ce7
IRF60SC241ARMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 360A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 360A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 100A, 10V
Power Dissipation (Max): 2.4W (Ta), 417W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: PG-TO263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 388 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16000 pF @ 30 V
товару немає в наявності
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IPI045N10N3 G INFN-S-A0004848105-1.pdf?t.download=true&u=5oefqw
Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 137A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 100A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 150µA
Supplier Device Package: PG-TO262-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8410 pF @ 50 V
товару немає в наявності
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IRF7416TRPBF-1 IRF7416PbF-1_11-19-13.pdf
IRF7416TRPBF-1
Виробник: Infineon Technologies
Description: MOSFET P-CH 30V 10A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 5.6A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.04V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
товару немає в наявності
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ICE2PCS02GFUMA1 ICE2PCS02_G_2010-03-22.pdf
ICE2PCS02GFUMA1
Виробник: Infineon Technologies
Description: IC PFC CTRLR CCM 65KHZ 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 11V ~ 25V
Frequency - Switching: 65kHz
Mode: Continuous Conduction (CCM)
Supplier Device Package: PG-DSO-8
Part Status: Obsolete
Current - Startup: 450 µA
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2EDF7235KXUMA1 Infineon-2EDF7275F-DS-v02_04-EN.pdf?fileId=5546d462636cc8fb0163b08fd9203057
2EDF7235KXUMA1
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDG TFLGA-13
Packaging: Tape & Reel (TR)
Package / Case: 13-TFLGA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 20V
Input Type: Non-Inverting
Supplier Device Package: PG-TFLGA-13-1
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: -, 1.65V
Current - Peak Output (Source, Sink): 4A, 8A
Part Status: Last Time Buy
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
2EDF7235KXUMA1 Infineon-2EDF7275F-DS-v02_04-EN.pdf?fileId=5546d462636cc8fb0163b08fd9203057
2EDF7235KXUMA1
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDG TFLGA-13
Packaging: Cut Tape (CT)
Package / Case: 13-TFLGA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 20V
Input Type: Non-Inverting
Supplier Device Package: PG-TFLGA-13-1
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: -, 1.65V
Current - Peak Output (Source, Sink): 4A, 8A
Part Status: Last Time Buy
DigiKey Programmable: Not Verified
товару немає в наявності
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2EDF7275KXUMA1 Infineon-2EDF7175F-DS-v02_00-EN.pdf?fileId=5546d462636cc8fb0163b09026be3060
2EDF7275KXUMA1
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDG TFLGA-13
Packaging: Tape & Reel (TR)
Package / Case: 13-TFLGA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 20V
Input Type: Non-Inverting
Supplier Device Package: PG-TFLGA-13-1
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: -, 1.65V
Current - Peak Output (Source, Sink): 4A, 8A
DigiKey Programmable: Not Verified
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4000+82.51 грн
8000+77.97 грн
Мінімальне замовлення: 4000
В кошику  од. на суму  грн.
2EDF7275KXUMA1 Infineon-2EDF7175F-DS-v02_00-EN.pdf?fileId=5546d462636cc8fb0163b09026be3060
2EDF7275KXUMA1
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDG TFLGA-13
Packaging: Cut Tape (CT)
Package / Case: 13-TFLGA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 20V
Input Type: Non-Inverting
Supplier Device Package: PG-TFLGA-13-1
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: -, 1.65V
Current - Peak Output (Source, Sink): 4A, 8A
DigiKey Programmable: Not Verified
на замовлення 8382 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+162.58 грн
10+116.02 грн
25+105.83 грн
100+88.81 грн
250+83.80 грн
500+80.78 грн
1000+77.01 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
2EDF7175FXUMA2 Infineon-2EDF7275F-DS-v02_04-EN.pdf?fileId=5546d462636cc8fb0163b08fd9203057
2EDF7175FXUMA2
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDG DSO16
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 20V
Input Type: Non-Inverting
Supplier Device Package: PG-DSO-16-11
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: -, 1.65V
Current - Peak Output (Source, Sink): 1A, 2A
DigiKey Programmable: Not Verified
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+86.18 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
2EDF7275FXUMA2 Infineon-2EDF7275F-DS-v02_04-EN.pdf?fileId=5546d462636cc8fb0163b08fd9203057
2EDF7275FXUMA2
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDG DSO16
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 1500 V
Supplier Device Package: PG-DSO-16-11
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: -, 1.65V
Current - Peak Output (Source, Sink): 4A, 8A
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+95.16 грн
5000+89.77 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
2EDS8165HXUMA1 Infineon-2EDF7175F-DS-v02_00-EN.pdf?fileId=5546d462636cc8fb0163b09026be3060
2EDS8165HXUMA1
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 20V
Input Type: Non-Inverting
Supplier Device Package: PG-DSO-16-30
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: -, 1.65V
Current - Peak Output (Source, Sink): 1A, 2A
Part Status: Discontinued at Digi-Key
DigiKey Programmable: Not Verified
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2EDS8265HXUMA1 Infineon-2EDF7175F-DS-v02_00-EN.pdf?fileId=5546d462636cc8fb0163b09026be3060
2EDS8265HXUMA1
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 20V
Input Type: Non-Inverting
Supplier Device Package: PG-DSO-16-30
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: -, 1.65V
Current - Peak Output (Source, Sink): 4A, 8A
Part Status: Discontinued at Digi-Key
DigiKey Programmable: Not Verified
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В кошику  од. на суму  грн.
2EDS8265HXUMA1 Infineon-2EDF7175F-DS-v02_00-EN.pdf?fileId=5546d462636cc8fb0163b09026be3060
2EDS8265HXUMA1
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 20V
Input Type: Non-Inverting
Supplier Device Package: PG-DSO-16-30
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: -, 1.65V
Current - Peak Output (Source, Sink): 4A, 8A
Part Status: Discontinued at Digi-Key
DigiKey Programmable: Not Verified
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2EDS9265HXUMA1 Infineon-2EDF7275F-DS-v02_04-EN.pdf?fileId=5546d462636cc8fb0163b08fd9203057
2EDS9265HXUMA1
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-16-30
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, SiC MOSFET
Logic Voltage - VIL, VIH: -, 1.65V
Current - Peak Output (Source, Sink): 4A, 8A
Part Status: Active
DigiKey Programmable: Not Verified
товару немає в наявності
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2EDS9265HXUMA1 Infineon-2EDF7275F-DS-v02_04-EN.pdf?fileId=5546d462636cc8fb0163b08fd9203057
2EDS9265HXUMA1
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-16-30
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, SiC MOSFET
Logic Voltage - VIL, VIH: -, 1.65V
Current - Peak Output (Source, Sink): 4A, 8A
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 464 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+166.00 грн
10+118.82 грн
25+108.37 грн
100+90.97 грн
250+85.86 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
2EDS8165HXUMA2 Infineon-2EDF7275F-DS-v02_04-EN.pdf?fileId=5546d462636cc8fb0163b08fd9203057
2EDS8165HXUMA2
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 20V
Input Type: Non-Inverting
Supplier Device Package: PG-DSO-16-30
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: -, 1.65V
Current - Peak Output (Source, Sink): 1A, 2A
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1000+88.79 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
2EDS8265HXUMA2 Infineon-2EDF7275F-DS-v02_04-EN.pdf?fileId=5546d462636cc8fb0163b08fd9203057
2EDS8265HXUMA2
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 20V
Input Type: Non-Inverting
Supplier Device Package: PG-DSO-16-30
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: -, 1.65V
Current - Peak Output (Source, Sink): 4A, 8A
Part Status: Active
DigiKey Programmable: Not Verified
товару немає в наявності
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TLF35584QVVS1XUMA2 Infineon-TLF35584QV-ProductOverview-DataSheet-v01_00-EN.pdf?fileId=5546d46279cccfdb0179ce150fc81cbf
TLF35584QVVS1XUMA2
Виробник: Infineon Technologies
Description: IC REG AUTO APPL 1OUT VQFN-48-31
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Voltage - Output: 5V
Mounting Type: Surface Mount
Number of Outputs: 1
Voltage - Input: 3V ~ 40V
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Power Supply, Automotive Applications
Supplier Device Package: PG-VQFN-48-31
Part Status: Active
товару немає в наявності
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TLF35584QVVS1XUMA2 Infineon-TLF35584QV-ProductOverview-DataSheet-v01_00-EN.pdf?fileId=5546d46279cccfdb0179ce150fc81cbf
TLF35584QVVS1XUMA2
Виробник: Infineon Technologies
Description: IC REG AUTO APPL 1OUT VQFN-48-31
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Voltage - Output: 5V
Mounting Type: Surface Mount
Number of Outputs: 1
Voltage - Input: 3V ~ 40V
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Power Supply, Automotive Applications
Supplier Device Package: PG-VQFN-48-31
Part Status: Active
на замовлення 1494 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+592.12 грн
10+388.17 грн
100+301.05 грн
В кошику  од. на суму  грн.
SGW30N60 INFNS14175-1.pdf?t.download=true&u=5oefqw
SGW30N60
Виробник: Infineon Technologies
Description: IGBT, 41A I(C), 600V V(BR)CES, N
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
Supplier Device Package: PG-TO247-3-21
IGBT Type: NPT
Td (on/off) @ 25°C: 44ns/291ns
Switching Energy: 640µJ (on), 650µJ (off)
Test Condition: 400V, 30A, 11Ohm, 15V
Gate Charge: 140 nC
Part Status: Active
Current - Collector (Ic) (Max): 41 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 112 A
Power - Max: 250 W
товару немає в наявності
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SPI20N65C3
SPI20N65C3
Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
товару немає в наявності
В кошику  од. на суму  грн.
TLE42712AKSA1 TLE 4271-2.pdf
TLE42712AKSA1
Виробник: Infineon Technologies
Description: IC REG LIN 5V 550MA TO220-7-11
Packaging: Bulk
Package / Case: TO-220-7 Formed Leads
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 550mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 6 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: P-TO220-7-11
Voltage - Output (Min/Fixed): 5V
Control Features: Reset, Watchdog
Part Status: Obsolete
PSRR: 54dB (100Hz)
Voltage Dropout (Max): 0.7V @ 550mA
Protection Features: Over Current, Over Temperature, Over Voltage, Reverse Polarity, Short Circuit
Current - Supply (Max): 90 mA
на замовлення 34338 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
205+119.30 грн
Мінімальне замовлення: 205
В кошику  од. на суму  грн.
SPD08N50C3 Infineon-SPD08N50C3-DS-v02_06-en.pdf?fileId=db3a30433f1b26e8013f1ea5b45f0334
SPD08N50C3
Виробник: Infineon Technologies
Description: COOLMOS, 7.6A, 500V, 0.6OHM, N-C
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.6A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 350µA
Supplier Device Package: PG-TO252-3-313
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
PMB3543E6327XQSA1
Виробник: Infineon Technologies
Description: TELECOM IC
Packaging: Bulk
на замовлення 119 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
7+3839.97 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
FS3L200R10W3S7FB11BPSA1 Infineon-FS3L200R10W3S7F_B11-DataSheet-v03_00-EN.pdf?fileId=5546d46271bf4f920172079cc70479ac
FS3L200R10W3S7FB11BPSA1
Виробник: Infineon Technologies
Description: IGBT MODULE LOW POWER EASY
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Level Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.55V @ 15V, 25A
NTC Thermistor: Yes
Supplier Device Package: AG-EASY3B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 950 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 31 µA
Input Capacitance (Cies) @ Vce: 6.48 nF @ 25 V
на замовлення 19 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+12555.13 грн
16+10820.18 грн
В кошику  од. на суму  грн.
F3L400R10W3S7FB11BPSA1 Infineon-F3L400R10W3S7F_B11-DataSheet-v03_00-EN.pdf?fileId=5546d46271bf4f920172078a6a58799d
F3L400R10W3S7FB11BPSA1
Виробник: Infineon Technologies
Description: IGBT MODULE LOW POWER EASY
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Level Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 150A
NTC Thermistor: Yes
Supplier Device Package: AG-EASY3B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 220 A
Voltage - Collector Emitter Breakdown (Max): 950 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 71 µA
Input Capacitance (Cies) @ Vce: 49.2 nF @ 25 V
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+15520.85 грн
В кошику  од. на суму  грн.
EVAL2ED020I12F2TOBO1 Infineon-EVAL_2ED020I12-F2-ApplicationNotes-v01_00-EN.pdf?fileId=db3a304340155f3d014029a78ed602f3
EVAL2ED020I12F2TOBO1
Виробник: Infineon Technologies
Description: EVAL BOARD FOR 2ED020I12-F2
Packaging: Bulk
Function: Gate Driver
Type: Power Management
Utilized IC / Part: 2ED020I12-F2
Supplied Contents: Board(s)
Part Status: Active
Contents: Board(s)
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+7666.73 грн
В кошику  од. на суму  грн.
KITAURIXTC275ARDSBTOBO1 Infineon-ShieldBuddy_TC275%20-UM-v02_08-EN.pdf?fileId=5546d46269e1c019016a54f0801a5590
KITAURIXTC275ARDSBTOBO1
Виробник: Infineon Technologies
Description: SHIELDBUDDYTC275-AURIX
Packaging: Box
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s), LCD
Core Processor: TriCore™
Utilized IC / Part: TC275
Platform: AURIX
на замовлення 145 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+14514.59 грн
В кошику  од. на суму  грн.
PTFA181001FV4R250FTMA1 PTFA181001%28E%2CF%29.pdf
PTFA181001FV4R250FTMA1
Виробник: Infineon Technologies
Description: RF MOSFET LDMOS 28V H-37248-2
Packaging: Tape & Reel (TR)
Package / Case: 2-Flatpack, Fin Leads, Flanged
Current Rating (Amps): 1µA
Mounting Type: Surface Mount
Frequency: 1.88GHz
Power - Output: 100W
Gain: 16.5dB
Technology: LDMOS
Supplier Device Package: H-37248-2
Voltage - Rated: 65 V
Voltage - Test: 28 V
Current - Test: 750 mA
товару немає в наявності
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IRLR3636TRLPBF IRSDS10828-1.pdf?t.download=true&u=5oefqw
IRLR3636TRLPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 50A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 50A, 10V
Power Dissipation (Max): 143W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3779 pF @ 50 V
на замовлення 444 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+187.39 грн
10+116.18 грн
100+79.57 грн
Мінімальне замовлення: 2
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IRFR3504ZTR IRFR3504Z%2C%20IRFU3504Z.pdf
IRFR3504ZTR
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 42A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 42A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1510 pF @ 25 V
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IRFR3504ZTRL IRFR3504Z%2C%20IRFU3504Z.pdf
IRFR3504ZTRL
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 42A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 42A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1510 pF @ 25 V
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IRFR3504ZTRR IRFR3504Z,%20IRFU3504Z.pdf
IRFR3504ZTRR
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 42A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 42A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: D-Pak
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1510 pF @ 25 V
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64-4059PBF irfr3504zpbf.pdf?fileId=5546d462533600a4015356311d09209b
64-4059PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 42A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 42A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1510 pF @ 25 V
товару немає в наявності
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IRFR3504ZTRLPBF irfr3504zpbf.pdf?fileId=5546d462533600a4015356311d09209b
IRFR3504ZTRLPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 42A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 42A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1510 pF @ 25 V
товару немає в наявності
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IRFR3504ZTRRPBF irfr3504zpbf.pdf?fileId=5546d462533600a4015356311d09209b
IRFR3504ZTRRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 42A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 42A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1510 pF @ 25 V
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BCR169WE6327 INFNS11715-1.pdf?t.download=true&u=5oefqw
BCR169WE6327
Виробник: Infineon Technologies
Description: TRANS PREBIAS PNP 50V SOT323-3
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
Supplier Device Package: PG-SOT323-3-1
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 4.7 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 Only
на замовлення 36000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
8955+2.20 грн
Мінімальне замовлення: 8955
В кошику  од. на суму  грн.
TLF50281ELXUMA1 Infineon-TLF50281EL-DS-v01_01-EN.pdf?fileId=5546d46258fc0bc1015969d2c73f41f2
TLF50281ELXUMA1
Виробник: Infineon Technologies
Description: IC REG BUCK 5V 500MA PGSSOP14
Packaging: Bulk
Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 500mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: 2.2MHz
Voltage - Input (Max): 45V
Topology: Buck
Supplier Device Package: PG-SSOP-14-EP
Synchronous Rectifier: No
Voltage - Input (Min): 4.75V
Voltage - Output (Min/Fixed): 5V
Part Status: Obsolete
Grade: Automotive
Qualification: AEC-Q100
на замовлення 1034 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
205+105.95 грн
Мінімальне замовлення: 205
В кошику  од. на суму  грн.
IPD30N06S3-24 INFNS11065-1.pdf?t.download=true&u=5oefqw
IPD30N06S3-24
Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drain to Source Voltage (Vdss): 55 V
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IPD230N06LG INFNS15837-1.pdf?t.download=true&u=5oefqw
IPD230N06LG
Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 2V @ 49µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 30 V
товару немає в наявності
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IPB230N06L3G INFNS19526-1.pdf?t.download=true&u=5oefqw
IPB230N06L3G
Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 30A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 11µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 30 V
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IPP230N06L3GXKSA1 INFNS19526-1.pdf?t.download=true&u=5oefqw
IPP230N06L3GXKSA1
Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A
Rds On (Max) @ Id, Vgs: 23mOhm @ 30A, 10V
Power Dissipation (Max): 36W
Vgs(th) (Max) @ Id: 2.2V @ 11µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 30 V
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
567+38.46 грн
Мінімальне замовлення: 567
В кошику  од. на суму  грн.
IPP230N06L3G INFNS19526-1.pdf?t.download=true&u=5oefqw
IPP230N06L3G
Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 30A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 11µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 30 V
на замовлення 9620 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
472+46.44 грн
Мінімальне замовлення: 472
В кошику  од. на суму  грн.
BGA420H6433XTMA1 bga420.pdf?folderId=db3a30431441fb5d0114b654e6581730&fileId=db3a304314dca3890115418cec781637
BGA420H6433XTMA1
Виробник: Infineon Technologies
Description: IC RF AMP GPS 0HZ-3GHZ SOT343-3D
Packaging: Bulk
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Frequency: 0Hz ~ 3GHz
RF Type: General Purpose
Voltage - Supply: 3V ~ 6V
Gain: 13dB
Current - Supply: 6.7mA
Noise Figure: 2.3dB
P1dB: -2.5dBm
Test Frequency: 1GHz
Supplier Device Package: PG-SOT343-3D
Part Status: Obsolete
на замовлення 119220 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
491+44.77 грн
Мінімальне замовлення: 491
В кошику  од. на суму  грн.
ICE3RBR0665JZXKLA1 INFNS27653-1.pdf?t.download=true&u=5oefqw
ICE3RBR0665JZXKLA1
Виробник: Infineon Technologies
Description: IC OFFLINE SWITCH FLYBACK 7DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 65kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10.5V ~ 25V
Supplier Device Package: PG-DIP-7-1
Fault Protection: Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 18 V
Part Status: Active
Power (Watts): 71 W
на замовлення 3885 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+189.96 грн
10+136.12 грн
50+117.42 грн
100+104.75 грн
250+99.01 грн
500+95.56 грн
1000+91.19 грн
2500+88.23 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
ICE3RBR0665JGXUMA1 Infineon-ICE3RBR0665JG-DS-v01_00-EN.pdf?fileId=5546d46253f6505701549aaf5c8c7514
ICE3RBR0665JGXUMA1
Виробник: Infineon Technologies
Description: IC OFFLINE SWITCH FLYBACK 12DSO
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 65kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10.5V ~ 25V
Supplier Device Package: PG-DSO-12-19
Fault Protection: Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 18 V
Part Status: Active
Power (Watts): 66 W
товару немає в наявності
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ICE3RBR0665JGXUMA1 Infineon-ICE3RBR0665JG-DS-v01_00-EN.pdf?fileId=5546d46253f6505701549aaf5c8c7514
ICE3RBR0665JGXUMA1
Виробник: Infineon Technologies
Description: IC OFFLINE SWITCH FLYBACK 12DSO
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 65kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10.5V ~ 25V
Supplier Device Package: PG-DSO-12-19
Fault Protection: Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 18 V
Part Status: Active
Power (Watts): 66 W
на замовлення 2474 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+178.83 грн
10+128.29 грн
25+117.20 грн
100+98.54 грн
250+93.08 грн
500+89.78 грн
1000+85.64 грн
Мінімальне замовлення: 2
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FP15R06YE3B4BOMA1
Виробник: Infineon Technologies
Description: MOD IGBT LOW PWR EASY2-1
товару немає в наявності
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