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IPP230N06L3G IPP230N06L3G Infineon Technologies INFNS19526-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 30A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 11µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 30 V
на замовлення 9620 шт:
термін постачання 21-31 дні (днів)
472+42.68 грн
Мінімальне замовлення: 472 шт
В кошику  од. на суму  грн.
BGA420H6433XTMA1 BGA420H6433XTMA1 Infineon Technologies bga420.pdf?folderId=db3a30431441fb5d0114b654e6581730&fileId=db3a304314dca3890115418cec781637 Description: IC RF AMP GPS 0HZ-3GHZ SOT343-3D
Packaging: Bulk
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Frequency: 0Hz ~ 3GHz
RF Type: General Purpose
Voltage - Supply: 3V ~ 6V
Gain: 13dB
Current - Supply: 6.7mA
Noise Figure: 2.3dB
P1dB: -2.5dBm
Test Frequency: 1GHz
Supplier Device Package: PG-SOT343-3D
Part Status: Obsolete
на замовлення 119220 шт:
термін постачання 21-31 дні (днів)
491+40.68 грн
Мінімальне замовлення: 491 шт
В кошику  од. на суму  грн.
ICE3RBR0665JZXKLA1 ICE3RBR0665JZXKLA1 Infineon Technologies INFNS27653-1.pdf?t.download=true&u=5oefqw Description: IC OFFLINE SWITCH FLYBACK 7DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 65kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10.5V ~ 25V
Supplier Device Package: PG-DIP-7-1
Fault Protection: Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 18 V
Part Status: Active
Power (Watts): 71 W
на замовлення 3884 шт:
термін постачання 21-31 дні (днів)
2+192.18 грн
10+137.97 грн
50+119.09 грн
100+106.28 грн
250+100.51 грн
500+97.02 грн
1000+92.61 грн
2500+89.64 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
ICE3RBR0665JGXUMA1 ICE3RBR0665JGXUMA1 Infineon Technologies Infineon-ICE3RBR0665JG-DS-v01_00-EN.pdf?fileId=5546d46253f6505701549aaf5c8c7514 Description: IC OFFLINE SWITCH FLYBACK 12DSO
Power (Watts): 66 W
Part Status: Active
Voltage - Start Up: 18 V
Fault Protection: Over Load, Over Temperature, Over Voltage
Supplier Device Package: PG-DSO-12-19
Voltage - Supply (Vcc/Vdd): 10.5V ~ 25V
Topology: Flyback
Output Isolation: Isolated
Voltage - Breakdown: 650V
Internal Switch(s): Yes
Frequency - Switching: 65kHz
Duty Cycle: 75%
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Packaging: Tape & Reel (TR)
товару немає в наявності
 Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
ICE3RBR0665JGXUMA1 ICE3RBR0665JGXUMA1 Infineon Technologies Infineon-ICE3RBR0665JG-DS-v01_00-EN.pdf?fileId=5546d46253f6505701549aaf5c8c7514 Description: IC OFFLINE SWITCH FLYBACK 12DSO
Power (Watts): 66 W
Part Status: Active
Voltage - Start Up: 18 V
Fault Protection: Over Load, Over Temperature, Over Voltage
Supplier Device Package: PG-DSO-12-19
Voltage - Supply (Vcc/Vdd): 10.5V ~ 25V
Topology: Flyback
Output Isolation: Isolated
Voltage - Breakdown: 650V
Internal Switch(s): Yes
Frequency - Switching: 65kHz
Duty Cycle: 75%
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Packaging: Cut Tape (CT)
на замовлення 2456 шт:
термін постачання 21-31 дні (днів)
2+199.93 грн
10+143.50 грн
25+131.33 грн
100+110.71 грн
250+104.73 грн
500+102.73 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
FP15R06YE3B4BOMA1 Infineon Technologies Description: MOD IGBT LOW PWR EASY2-1
товару немає в наявності
 Мінімальне замовлення: 20 шт
В кошику  од. на суму  грн.
FZ2000R33HE4BOSA1 FZ2000R33HE4BOSA1 Infineon Technologies Infineon-FZ2000R33HE4-DataSheet-v02_01-EN.pdf?fileId=5546d4626eab8fbf016ed15a9df22af8 Description: IGBT MOD 3300V 2000A AGIHVB190-3
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 2kA (Typ)
NTC Thermistor: No
Supplier Device Package: AG-IHVB190-3
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 2000 A
Voltage - Collector Emitter Breakdown (Max): 3300 V
Power - Max: 4200 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 280 nF @ 25 V
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
1+155768.07 грн
В кошику  од. на суму  грн.
IPU50R950CE IPU50R950CE Infineon Technologies INFN-S-A0002263195-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 231 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 13V
Supplier Device Package: PG-TO251-3
Vgs(th) (Max) @ Id: 3.5V @ 100µA
Power Dissipation (Max): 53W (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 1.2A, 13V
Current - Continuous Drain (Id) @ 25°C: 6.6A (Tc)
FET Type: N-Channel
на замовлення 235740 шт:
термін постачання 21-31 дні (днів)
1731+12.47 грн
Мінімальне замовлення: 1731 шт
В кошику  од. на суму  грн.
IPU50R950CEBTMA1 IPU50R950CEBTMA1 Infineon Technologies INFN-S-A0001301404-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 231 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 13V
Part Status: Active
Supplier Device Package: PG-TO251-3-345
Vgs(th) (Max) @ Id: 3.5V @ 100µA
Power Dissipation (Max): 34W (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 1.2A, 13V
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Bulk
на замовлення 4380 шт:
термін постачання 21-31 дні (днів)
1731+12.47 грн
Мінімальне замовлення: 1731 шт
В кошику  од. на суму  грн.
DHS1011AUMA1 DHS1011AUMA1 Infineon Technologies Description: DSO-12-13
Packaging: Bulk
товару немає в наявності
В кошику  од. на суму  грн.
BCW68GE6327 BCW68GE6327 Infineon Technologies INFNS11571-1.pdf?t.download=true&u=5oefqw Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: PG-SOT23-3-1
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 330 mW
товару немає в наявності
В кошику  од. на суму  грн.
CYUSB3014-FBXCT CYUSB3014-FBXCT Infineon Technologies download Description: IC USB CTLR
Packaging: Tape & Reel (TR)
Package / Case: 131-UFBGA, WLCSP
Mounting Type: Surface Mount
Interface: GPIF, I2C, I2S, SPI, UART, USB
RAM Size: 512K x 8
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 1.15V ~ 1.25V
Controller Series: CYUSB
Program Memory Type: External Program Memory
Applications: SuperSpeed USB Peripheral Controller
Core Processor: ARM9®
Supplier Device Package: 131-WLCSP (5.1x4.7)
Part Status: Obsolete
Number of I/O: 60
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
IRGB30B60KPBF-INF Infineon Technologies Description: IGBT, 75A I(C), 600V V(BR)CES, N
товару немає в наявності
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IRGB15B60KDPBF-INF IRGB15B60KDPBF-INF Infineon Technologies IRSDS10534-1.pdf?t.download=true&u=5oefqw Description: IGBT NPT 600V 31A TO-220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 92 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 15A
Supplier Device Package: TO-220AB
IGBT Type: NPT
Td (on/off) @ 25°C: 34ns/184ns
Switching Energy: 220µJ (on), 340µJ (off)
Test Condition: 400V, 15A, 22Ohm, 15V
Gate Charge: 84 nC
Part Status: Active
Current - Collector (Ic) (Max): 31 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 62 A
Power - Max: 208 W
на замовлення 2245 шт:
термін постачання 21-31 дні (днів)
141+152.96 грн
Мінімальне замовлення: 141 шт
В кошику  од. на суму  грн.
IRGB4B60KPBF IRGB4B60KPBF Infineon Technologies fundamentals-of-power-semiconductors Description: IGBT NPT 600V 12A TO-220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 4A
Supplier Device Package: TO-220AB
IGBT Type: NPT
Td (on/off) @ 25°C: 22ns/100ns
Switching Energy: 130µJ (on), 83µJ (off)
Test Condition: 400V, 4A, 100Ohm, 15V
Gate Charge: 12 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 63 W
на замовлення 1391 шт:
термін постачання 21-31 дні (днів)
335+58.87 грн
Мінімальне замовлення: 335 шт
В кошику  од. на суму  грн.
CY96F673ABPMC1-GS109UJE2 CY96F673ABPMC1-GS109UJE2 Infineon Technologies download Description: IC MCU 16BIT 96KB FLASH 64LQFP
товару немає в наявності
 Мінімальне замовлення: 1600 шт
В кошику  од. на суму  грн.
CY96F693ABPMC-GS109-UJE2 CY96F693ABPMC-GS109-UJE2 Infineon Technologies Infineon-CY96690_Series_F2MC-16FX_16-bit_Proprietary_Microcontroller-AdditionalTechnicalInformation-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edd4ab561a3&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all Description: IC MCU 16BIT 96KB FLASH 100LQFP
товару немає в наявності
 Мінімальне замовлення: 900 шт
В кошику  од. на суму  грн.
CYW20706UA1KFFB1GT CYW20706UA1KFFB1GT Infineon Technologies download Description: IC RF TXRX+MCU BLE 49FCBGA
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Serial Interfaces: I2C, I2S, SPI, UART
RF Family/Standard: Bluetooth
GPIO: 7
Supplier Device Package: 49-FCBGA (4.5x4)
Current - Transmitting: 26.5mA
Data Rate (Max): 2Mbps
Current - Receiving: 12.5mA
Protocol: Bluetooth v4.2
Power - Output: 12dBm
Voltage - Supply: 3.3V
Operating Temperature: -30°C ~ 85°C
Type: TxRx + MCU
Memory Size: 848kB ROM, 352kB RAM
Frequency: 2.4GHz
Mounting Type: Surface Mount
Sensitivity: -96.5dBm
Package / Case: 49-VFBGA, FCBGA
на замовлення 105000 шт:
термін постачання 21-31 дні (днів)
2500+97.64 грн
Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
CYW20706UA1KFFB1G CYW20706UA1KFFB1G Infineon Technologies download Description: IC RF TXRX+MCU BLE 49FCBGA
Packaging: Tray
Package / Case: 49-VFBGA, FCBGA
Sensitivity: -96.5dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 848kB ROM, 352kB RAM
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 3.3V
Power - Output: 12dBm
Protocol: Bluetooth v4.2
Current - Receiving: 12.5mA
Data Rate (Max): 2Mbps
Current - Transmitting: 26.5mA
Supplier Device Package: 49-FCBGA (4.5x4)
GPIO: 7
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, I2S, SPI, UART
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 980 шт:
термін постачання 21-31 дні (днів)
3+105.39 грн
10+87.60 грн
25+82.65 грн
100+71.20 грн
490+64.73 грн
980+62.18 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
CYW20706UA1KFFB1GT CYW20706UA1KFFB1GT Infineon Technologies download Description: IC RF TXRX+MCU BLE 49FCBGA
DigiKey Programmable: Not Verified
Serial Interfaces: I2C, I2S, SPI, UART
RF Family/Standard: Bluetooth
GPIO: 7
Supplier Device Package: 49-FCBGA (4.5x4)
Current - Transmitting: 26.5mA
Data Rate (Max): 2Mbps
Current - Receiving: 12.5mA
Protocol: Bluetooth v4.2
Power - Output: 12dBm
Voltage - Supply: 3.3V
Operating Temperature: -30°C ~ 85°C
Type: TxRx + MCU
Memory Size: 848kB ROM, 352kB RAM
Frequency: 2.4GHz
Mounting Type: Surface Mount
Sensitivity: -96.5dBm
Package / Case: 49-VFBGA, FCBGA
Packaging: Tape & Reel (TR)
товару немає в наявності
 Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
CYW20706UA1KFFB4G CYW20706UA1KFFB4G Infineon Technologies download Description: IC RF TXRX+MCU BLE 49FCBGA
Packaging: Tray
Package / Case: 49-VFBGA, FCBGA
Sensitivity: -96.5dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 848kB ROM, 352kB RAM
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 3.3V
Power - Output: 12dBm
Protocol: Bluetooth v4.2
Current - Receiving: 12.5mA
Data Rate (Max): 2Mbps
Current - Transmitting: 26.5mA
Supplier Device Package: 49-FCBGA (4.5x4)
GPIO: 7
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, I2S, SPI, UART
DigiKey Programmable: Not Verified
товару немає в наявності
 Мінімальне замовлення: 2450 шт
В кошику  од. на суму  грн.
CY7C1327G-166AXC CY7C1327G-166AXC Infineon Technologies Infineon-CY7C1327G_4-Mbit_(256_K_18)_Pipelined_Sync_SRAM-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec41d4b3988 Description: IC SRAM 4.5MBIT PAR 100TQFP
DigiKey Programmable: Not Verified
Memory Organization: 256K x 18
Access Time: 3.5 ns
Memory Interface: Parallel
Supplier Device Package: 100-TQFP (14x20)
Memory Format: SRAM
Clock Frequency: 166 MHz
Technology: SRAM - Synchronous, SDR
Voltage - Supply: 3.15V ~ 3.6V
Operating Temperature: 0°C ~ 70°C (TA)
Memory Type: Volatile
Memory Size: 4.5Mbit
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Packaging: Tray
на замовлення 348 шт:
термін постачання 21-31 дні (днів)
2+161.96 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IMW65R072M1HXKSA1 IMW65R072M1HXKSA1 Infineon Technologies Infineon-IMW65R072M1H-DataSheet-v02_00-EN.pdf?fileId=5546d4626f229553016f85c9c62a0482 Description: MOSFET 650V NCH SIC TRENCH
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 94mOhm @ 13.3A, 18V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 4mA
Supplier Device Package: PG-TO247-3-41
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 744 pF @ 400 V
на замовлення 220 шт:
термін постачання 21-31 дні (днів)
1+497.49 грн
30+277.24 грн
120+232.89 грн
В кошику  од. на суму  грн.
BSP78E6327 BSP78E6327 Infineon Technologies Description: POWER SWITCH SMART LOW
Packaging: Bulk
Part Status: Active
товару немає в наявності
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BTS141NKSA1 BTS141NKSA1 Infineon Technologies INFNS27674-1.pdf?t.download=true&u=5oefqw Description: BUFFER/INVERTER PERIPHL DRIVER
Features: Auto Restart, Slew Rate Controlled
Packaging: Bulk
Package / Case: TO-220-3
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 25mOhm
Input Type: Non-Inverting
Voltage - Load: 60V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 12A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO220-3-1
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, Short Circuit
Part Status: Active
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BTS141E3045ANTMA1 Infineon Technologies INFNS27674-1.pdf?t.download=true&u=5oefqw Description: BUFFER/INVERTER PERIPHL DRIVER
Features: Auto Restart, Slew Rate Controlled
Packaging: Bulk
Package / Case: TO-220-3
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 25mOhm
Input Type: Non-Inverting
Voltage - Load: 60V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 12A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO220-3
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, Short Circuit
Part Status: Active
на замовлення 19358 шт:
термін постачання 21-31 дні (днів)
118+169.28 грн
Мінімальне замовлення: 118 шт
В кошику  од. на суму  грн.
BSL211SPL6327 BSL211SPL6327 Infineon Technologies INFNS17497-1.pdf?t.download=true&u=5oefqw Description: P-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta)
Rds On (Max) @ Id, Vgs: 67mOhm @ 4.7A, 4.5V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 25µA
Supplier Device Package: PG-TSOP6-6-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 654 pF @ 15 V
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IPLK70R600P7ATMA1 IPLK70R600P7ATMA1 Infineon Technologies infineon-iplk70r600p7-datasheet-en.pdf Description: MOSFET N-CH 700V TDSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Supplier Device Package: PG-TDSON-8
Part Status: Active
Drain to Source Voltage (Vdss): 700 V
товару немає в наявності
 Мінімальне замовлення: 5000 шт
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AUIRFP46310Z Infineon Technologies Description: AUTOMOTIVE POWER MOSFET
Part Status: Active
Packaging: Bulk
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BTS282ZE3180AATMA1 BTS282ZE3180AATMA1 Infineon Technologies INFNS27932-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 232 nC @ 10 V
Drain to Source Voltage (Vdss): 49 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TO263-7-1
Vgs(th) (Max) @ Id: 2V @ 240µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 36A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Packaging: Bulk
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BTS282ZE3230 Infineon Technologies INFNS27932-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Drain to Source Voltage (Vdss): 49 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TO220-7-12
Vgs(th) (Max) @ Id: 2V @ 240µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 36A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-7
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 232 nC @ 10 V
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BTS282ZE3180A BTS282ZE3180A Infineon Technologies INFNS27932-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 232 nC @ 10 V
Drain to Source Voltage (Vdss): 49 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TO263-7-1
Vgs(th) (Max) @ Id: 2V @ 240µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 36A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
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BTS282ZE3180ANTMA1 BTS282ZE3180ANTMA1 Infineon Technologies INFNS27932-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 232 nC @ 10 V
Drain to Source Voltage (Vdss): 49 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TO263-7-1
Vgs(th) (Max) @ Id: 2V @ 240µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 36A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Packaging: Bulk
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BTS7741G BTS7741G Infineon Technologies INFNS25530-1.pdf?t.download=true&u=5oefqw Description: IC HALF BRIDGE DRIVER 7A PDSO28
Features: Slew Rate Controlled, Status Flag
Packaging: Bulk
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 1.8V ~ 42V
Rds On (Typ): 100mOhm LS, 110mOhm HS
Applications: DC Motors, General Purpose
Current - Output / Channel: 7A
Current - Peak Output: 10A
Technology: DMOS
Voltage - Load: 1.8V ~ 42V
Supplier Device Package: P-DSO-28
Fault Protection: Current Limiting, ESD, Open Load Detect, Over Temperature, Short Circuit, UVLO
Load Type: Inductive
Part Status: Active
на замовлення 245 шт:
термін постачання 21-31 дні (днів)
130+152.13 грн
Мінімальне замовлення: 130 шт
В кошику  од. на суму  грн.
BTS7750G BTS7750G Infineon Technologies INFNS03487-1.pdf?t.download=true&u=5oefqw Description: BRUSH DC MOTOR CONTROLLER
Packaging: Bulk
Part Status: Active
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AIGB40N65H5ATMA1 AIGB40N65H5ATMA1 Infineon Technologies Infineon-Semiconductor_solutions_for_hybrid_electric_and_electric_cars-ABR-v01_00-EN.pdf?fileId=5546d46269e1c019016a4a76250c4ab4 Description: IGBT NPT 650V 40A TO263-3-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Input Type: Standard
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
товару немає в наявності
 Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
TLI5012BE1000XUMA1 TLI5012BE1000XUMA1 Infineon Technologies Infineon-TLI5012B+E1000-DS-v01_01-EN.pdf?fileId=5546d4624fb7fef2014ff423fcd077a8 Description: SENSOR ANGLE 360DEG SMD
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Wheatstone Bridge
Operating Temperature: -40°C ~ 125°C
Termination Style: Gull Wing
Voltage - Supply: 3V ~ 5.5V
Actuator Type: External Magnet, Not Included
Technology: Magnetoresistive
For Measuring: Angle
Supplier Device Package: PG-DSO-8
Rotation Angle - Electrical, Mechanical: 0° ~ 360°, Continuous
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
на замовлення 5267 шт:
термін постачання 21-31 дні (днів)
2+215.42 грн
5+185.36 грн
10+177.08 грн
25+156.95 грн
50+150.66 грн
100+144.90 грн
500+131.11 грн
1000+127.41 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
BCM856SH6778 BCM856SH6778 Infineon Technologies INFNS17175-1.pdf?t.download=true&u=5oefqw Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Part Status: Active
Supplier Device Package: PG-SOT363-6-1
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Voltage - Collector Emitter Breakdown (Max): 65V
Current - Collector (Ic) (Max): 100mA
Power - Max: 250mW
Operating Temperature: 150°C (TJ)
Transistor Type: 2 PNP (Dual)
Mounting Type: Surface Mount
Package / Case: 6-VSSOP, SC-88, SOT-363
Packaging: Bulk
Qualification: AEC-Q101
Grade: Automotive
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+8.48 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
IPW50R140CPFKSA1 IPW50R140CPFKSA1 Infineon Technologies IPW50R140CP_rev2.1.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42daa4448bf Description: MOSFET N-CH 550V 23A TO247-3
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 14A, 10V
Power Dissipation (Max): 192W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 930µA
Supplier Device Package: PG-TO247-3-1
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 550 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2540 pF @ 100 V
на замовлення 17881 шт:
термін постачання 21-31 дні (днів)
81+246.97 грн
Мінімальне замовлення: 81 шт
В кошику  од. на суму  грн.
XMC4502-F100F768AB XMC4502-F100F768AB Infineon Technologies INFNS27688-1.pdf?t.download=true&u=5oefqw Description: 32-BIT MCU XMC4000 ARM CORTEX-M4
Packaging: Bulk
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 768KB (768K x 8)
RAM Size: 160K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 20x12b; D/A 2x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 3.13V ~ 3.63V
Connectivity: CANbus, EBI/EMI, I²C, LINbus, SPI, UART/USART, USB, USB OTG
Peripherals: DMA, I²S, LED, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-25
Part Status: Active
Number of I/O: 55
DigiKey Programmable: Not Verified
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BTS410E2E3062ANTMA1 BTS410E2E3062ANTMA1 Infineon Technologies INFNS30249-1.pdf?t.download=true&u=5oefqw Description: BUFFER/INVERTER PERIPHL DRIVER
Features: Auto Restart, Slew Rate Controlled
Packaging: Bulk
Package / Case: TO-263-5, D²Pak (4 Leads + Tab), TO-263BB
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 190mOhm
Input Type: Non-Inverting
Voltage - Load: 4.7V ~ 42V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.8A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO263-5-2
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, UVLO
Part Status: Active
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TLE5011FUMA1 TLE5011FUMA1 Infineon Technologies TLE5011_Final_Data_Sheet_V2.0.pdf?folderId=db3a30431ce5fb52011d3dd6e8012582&fileId=db3a30432ee77f32012f0c4368b5110e Description: SENSOR ANGLE 360DEG SMD
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Wheatstone Bridge
Operating Temperature: -40°C ~ 150°C
Termination Style: Gull Wing
Voltage - Supply: 3V ~ 5.5V
Actuator Type: External Magnet, Not Included
Technology: Magnetoresistive
For Measuring: Angle
Supplier Device Package: PG-DSO-8
Rotation Angle - Electrical, Mechanical: 0° ~ 360°, Continuous
Grade: Automotive
Part Status: Last Time Buy
Qualification: AEC-Q100
товару немає в наявності
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TLE5011FUMA1 TLE5011FUMA1 Infineon Technologies TLE5011_Final_Data_Sheet_V2.0.pdf?folderId=db3a30431ce5fb52011d3dd6e8012582&fileId=db3a30432ee77f32012f0c4368b5110e Description: SENSOR ANGLE 360DEG SMD
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Wheatstone Bridge
Operating Temperature: -40°C ~ 150°C
Termination Style: Gull Wing
Voltage - Supply: 3V ~ 5.5V
Actuator Type: External Magnet, Not Included
Technology: Magnetoresistive
For Measuring: Angle
Supplier Device Package: PG-DSO-8
Rotation Angle - Electrical, Mechanical: 0° ~ 360°, Continuous
Grade: Automotive
Part Status: Last Time Buy
Qualification: AEC-Q100
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IR3824MTRPBF Infineon Technologies IR3824_Rev3.7_3-24-16.pdf Description: IC REG BUCK CTRLR PQFN
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AUIRLR120NTRL AUIRLR120NTRL Infineon Technologies INFN-S-A0002298945-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 100V 10A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 6A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Grade: Automotive
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V
Qualification: AEC-Q101
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BC857CB5000 BC857CB5000 Infineon Technologies INFNS16508-1.pdf?t.download=true&u=5oefqw Description: TRANS PNP 45V 0.1A PG-SOT23-3-1
Packaging: Bulk
Part Status: Active
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23-3-1
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 330 mW
Qualification: AEC-Q101
на замовлення 540000 шт:
термін постачання 21-31 дні (днів)
8955+2.04 грн
Мінімальне замовлення: 8955 шт
В кошику  од. на суму  грн.
BUZ73AHXKSA1 BUZ73AHXKSA1 Infineon Technologies INFNS13418-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.5A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 25 V
на замовлення 10823 шт:
термін постачання 21-31 дні (днів)
489+40.83 грн
Мінімальне замовлення: 489 шт
В кошику  од. на суму  грн.
BUZ73ALHXKSA1 BUZ73ALHXKSA1 Infineon Technologies BUZ73AL_H.pdf Description: MOSFET N-CH 200V 5.5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 5V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 25 V
на замовлення 5454 шт:
термін постачання 21-31 дні (днів)
489+40.48 грн
Мінімальне замовлення: 489 шт
В кошику  од. на суму  грн.
BUZ73AH3046 BUZ73AH3046 Infineon Technologies INFNS13418-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Part Status: Active
Supplier Device Package: PG-TO220-3-1
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 40W (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 25 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
на замовлення 12135 шт:
термін постачання 21-31 дні (днів)
693+30.69 грн
Мінімальне замовлення: 693 шт
В кошику  од. на суму  грн.
BUZ73AIN Infineon Technologies INFNS13418-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 25 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO220-3-1
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 40W (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
на замовлення 966 шт:
термін постачання 21-31 дні (днів)
590+34.13 грн
Мінімальне замовлення: 590 шт
В кошику  од. на суму  грн.
BUZ73ALIN Infineon Technologies INFNS13419-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
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BUZ73AE3046 Infineon Technologies INFNS11956-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 25 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO220-3-1
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 40W (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bulk
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SN7002NE6327 SN7002NE6327 Infineon Technologies SN7002N.pdf?t.download=true&u=5oefqw Description: SMALL SIGNAL N-CHANNEL MOSFET
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 26µA
Supplier Device Package: PG-SOT23-3-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 25 V
товару немає в наявності
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SN7002NH6433XTMA1 SN7002NH6433XTMA1 Infineon Technologies Infineon-SN7002N-DS-v02_06-en.pdf?fileId=db3a304330f6860601311934e76045d5 Description: MOSFET N-CH 60V 200MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 26µA
Supplier Device Package: PG-SOT23
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 25 V
Qualification: AEC-Q101
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SN7002NH6433XTMA1 SN7002NH6433XTMA1 Infineon Technologies Infineon-SN7002N-DS-v02_06-en.pdf?fileId=db3a304330f6860601311934e76045d5 Description: MOSFET N-CH 60V 200MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 26µA
Supplier Device Package: PG-SOT23
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 25 V
Qualification: AEC-Q101
на замовлення 8977 шт:
термін постачання 21-31 дні (днів)
16+19.37 грн
26+11.57 грн
100+7.18 грн
500+4.94 грн
1000+4.36 грн
2000+3.86 грн
5000+3.27 грн
Мінімальне замовлення: 16 шт
В кошику  од. на суму  грн.
SN7002N E6327 SN7002N E6327 Infineon Technologies SN7002N.pdf Description: MOSFET N-CH 60V 200MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 26µA
Supplier Device Package: PG-SOT23
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 25 V
Qualification: AEC-Q101
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SN7002N E6433 SN7002N E6433 Infineon Technologies SN7002N.pdf Description: MOSFET N-CH 60V 200MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 26µA
Supplier Device Package: PG-SOT23
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 25 V
Qualification: AEC-Q101
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SN7002NH6327XTSA1 SN7002NH6327XTSA1 Infineon Technologies Infineon-SN7002N-DS-v02_06-en.pdf?fileId=db3a304330f6860601311934e76045d5 Description: MOSFET N-CH 60V 200MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 26µA
Supplier Device Package: PG-SOT23
Grade: Automotive
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 25 V
Qualification: AEC-Q101
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SN7002NH6327XTSA1 SN7002NH6327XTSA1 Infineon Technologies Infineon-SN7002N-DS-v02_06-en.pdf?fileId=db3a304330f6860601311934e76045d5 Description: MOSFET N-CH 60V 200MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 26µA
Supplier Device Package: PG-SOT23
Grade: Automotive
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 25 V
Qualification: AEC-Q101
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IRF1310NSPBF-INF IRF1310NSPBF-INF Infineon Technologies Description: HEXFET POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 22A, 10V
Power Dissipation (Max): 3.8W (Ta), 160W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
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IPP230N06L3G INFNS19526-1.pdf?t.download=true&u=5oefqw
IPP230N06L3G
Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 30A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 11µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 30 V
на замовлення 9620 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
472+42.68 грн
Мінімальне замовлення: 472 шт
В кошику  од. на суму  грн.
BGA420H6433XTMA1 bga420.pdf?folderId=db3a30431441fb5d0114b654e6581730&fileId=db3a304314dca3890115418cec781637
BGA420H6433XTMA1
Виробник: Infineon Technologies
Description: IC RF AMP GPS 0HZ-3GHZ SOT343-3D
Packaging: Bulk
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Frequency: 0Hz ~ 3GHz
RF Type: General Purpose
Voltage - Supply: 3V ~ 6V
Gain: 13dB
Current - Supply: 6.7mA
Noise Figure: 2.3dB
P1dB: -2.5dBm
Test Frequency: 1GHz
Supplier Device Package: PG-SOT343-3D
Part Status: Obsolete
на замовлення 119220 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
491+40.68 грн
Мінімальне замовлення: 491 шт
В кошику  од. на суму  грн.
ICE3RBR0665JZXKLA1 INFNS27653-1.pdf?t.download=true&u=5oefqw
ICE3RBR0665JZXKLA1
Виробник: Infineon Technologies
Description: IC OFFLINE SWITCH FLYBACK 7DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 65kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10.5V ~ 25V
Supplier Device Package: PG-DIP-7-1
Fault Protection: Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 18 V
Part Status: Active
Power (Watts): 71 W
на замовлення 3884 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2+192.18 грн
10+137.97 грн
50+119.09 грн
100+106.28 грн
250+100.51 грн
500+97.02 грн
1000+92.61 грн
2500+89.64 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
ICE3RBR0665JGXUMA1 Infineon-ICE3RBR0665JG-DS-v01_00-EN.pdf?fileId=5546d46253f6505701549aaf5c8c7514
ICE3RBR0665JGXUMA1
Виробник: Infineon Technologies
Description: IC OFFLINE SWITCH FLYBACK 12DSO
Power (Watts): 66 W
Part Status: Active
Voltage - Start Up: 18 V
Fault Protection: Over Load, Over Temperature, Over Voltage
Supplier Device Package: PG-DSO-12-19
Voltage - Supply (Vcc/Vdd): 10.5V ~ 25V
Topology: Flyback
Output Isolation: Isolated
Voltage - Breakdown: 650V
Internal Switch(s): Yes
Frequency - Switching: 65kHz
Duty Cycle: 75%
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 2500 шт
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ICE3RBR0665JGXUMA1 Infineon-ICE3RBR0665JG-DS-v01_00-EN.pdf?fileId=5546d46253f6505701549aaf5c8c7514
ICE3RBR0665JGXUMA1
Виробник: Infineon Technologies
Description: IC OFFLINE SWITCH FLYBACK 12DSO
Power (Watts): 66 W
Part Status: Active
Voltage - Start Up: 18 V
Fault Protection: Over Load, Over Temperature, Over Voltage
Supplier Device Package: PG-DSO-12-19
Voltage - Supply (Vcc/Vdd): 10.5V ~ 25V
Topology: Flyback
Output Isolation: Isolated
Voltage - Breakdown: 650V
Internal Switch(s): Yes
Frequency - Switching: 65kHz
Duty Cycle: 75%
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Packaging: Cut Tape (CT)
на замовлення 2456 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2+199.93 грн
10+143.50 грн
25+131.33 грн
100+110.71 грн
250+104.73 грн
500+102.73 грн
Мінімальне замовлення: 2 шт
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FP15R06YE3B4BOMA1
Виробник: Infineon Technologies
Description: MOD IGBT LOW PWR EASY2-1
товару немає в наявності
Мінімальне замовлення: 20 шт
В кошику  од. на суму  грн.
FZ2000R33HE4BOSA1 Infineon-FZ2000R33HE4-DataSheet-v02_01-EN.pdf?fileId=5546d4626eab8fbf016ed15a9df22af8
FZ2000R33HE4BOSA1
Виробник: Infineon Technologies
Description: IGBT MOD 3300V 2000A AGIHVB190-3
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 2kA (Typ)
NTC Thermistor: No
Supplier Device Package: AG-IHVB190-3
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 2000 A
Voltage - Collector Emitter Breakdown (Max): 3300 V
Power - Max: 4200 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 280 nF @ 25 V
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+155768.07 грн
В кошику  од. на суму  грн.
IPU50R950CE INFN-S-A0002263195-1.pdf?t.download=true&u=5oefqw
IPU50R950CE
Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 231 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 13V
Supplier Device Package: PG-TO251-3
Vgs(th) (Max) @ Id: 3.5V @ 100µA
Power Dissipation (Max): 53W (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 1.2A, 13V
Current - Continuous Drain (Id) @ 25°C: 6.6A (Tc)
FET Type: N-Channel
на замовлення 235740 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1731+12.47 грн
Мінімальне замовлення: 1731 шт
В кошику  од. на суму  грн.
IPU50R950CEBTMA1 INFN-S-A0001301404-1.pdf?t.download=true&u=5oefqw
IPU50R950CEBTMA1
Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 231 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 13V
Part Status: Active
Supplier Device Package: PG-TO251-3-345
Vgs(th) (Max) @ Id: 3.5V @ 100µA
Power Dissipation (Max): 34W (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 1.2A, 13V
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Bulk
на замовлення 4380 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1731+12.47 грн
Мінімальне замовлення: 1731 шт
В кошику  од. на суму  грн.
DHS1011AUMA1
DHS1011AUMA1
Виробник: Infineon Technologies
Description: DSO-12-13
Packaging: Bulk
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BCW68GE6327 INFNS11571-1.pdf?t.download=true&u=5oefqw
BCW68GE6327
Виробник: Infineon Technologies
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: PG-SOT23-3-1
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 330 mW
товару немає в наявності
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CYUSB3014-FBXCT download
CYUSB3014-FBXCT
Виробник: Infineon Technologies
Description: IC USB CTLR
Packaging: Tape & Reel (TR)
Package / Case: 131-UFBGA, WLCSP
Mounting Type: Surface Mount
Interface: GPIF, I2C, I2S, SPI, UART, USB
RAM Size: 512K x 8
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 1.15V ~ 1.25V
Controller Series: CYUSB
Program Memory Type: External Program Memory
Applications: SuperSpeed USB Peripheral Controller
Core Processor: ARM9®
Supplier Device Package: 131-WLCSP (5.1x4.7)
Part Status: Obsolete
Number of I/O: 60
DigiKey Programmable: Not Verified
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IRGB30B60KPBF-INF
Виробник: Infineon Technologies
Description: IGBT, 75A I(C), 600V V(BR)CES, N
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IRGB15B60KDPBF-INF IRSDS10534-1.pdf?t.download=true&u=5oefqw
IRGB15B60KDPBF-INF
Виробник: Infineon Technologies
Description: IGBT NPT 600V 31A TO-220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 92 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 15A
Supplier Device Package: TO-220AB
IGBT Type: NPT
Td (on/off) @ 25°C: 34ns/184ns
Switching Energy: 220µJ (on), 340µJ (off)
Test Condition: 400V, 15A, 22Ohm, 15V
Gate Charge: 84 nC
Part Status: Active
Current - Collector (Ic) (Max): 31 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 62 A
Power - Max: 208 W
на замовлення 2245 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
141+152.96 грн
Мінімальне замовлення: 141 шт
В кошику  од. на суму  грн.
IRGB4B60KPBF fundamentals-of-power-semiconductors
IRGB4B60KPBF
Виробник: Infineon Technologies
Description: IGBT NPT 600V 12A TO-220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 4A
Supplier Device Package: TO-220AB
IGBT Type: NPT
Td (on/off) @ 25°C: 22ns/100ns
Switching Energy: 130µJ (on), 83µJ (off)
Test Condition: 400V, 4A, 100Ohm, 15V
Gate Charge: 12 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 63 W
на замовлення 1391 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
335+58.87 грн
Мінімальне замовлення: 335 шт
В кошику  од. на суму  грн.
CY96F673ABPMC1-GS109UJE2 download
CY96F673ABPMC1-GS109UJE2
Виробник: Infineon Technologies
Description: IC MCU 16BIT 96KB FLASH 64LQFP
товару немає в наявності
Мінімальне замовлення: 1600 шт
В кошику  од. на суму  грн.
CY96F693ABPMC-GS109-UJE2 Infineon-CY96690_Series_F2MC-16FX_16-bit_Proprietary_Microcontroller-AdditionalTechnicalInformation-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edd4ab561a3&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all
CY96F693ABPMC-GS109-UJE2
Виробник: Infineon Technologies
Description: IC MCU 16BIT 96KB FLASH 100LQFP
товару немає в наявності
Мінімальне замовлення: 900 шт
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CYW20706UA1KFFB1GT download
CYW20706UA1KFFB1GT
Виробник: Infineon Technologies
Description: IC RF TXRX+MCU BLE 49FCBGA
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Serial Interfaces: I2C, I2S, SPI, UART
RF Family/Standard: Bluetooth
GPIO: 7
Supplier Device Package: 49-FCBGA (4.5x4)
Current - Transmitting: 26.5mA
Data Rate (Max): 2Mbps
Current - Receiving: 12.5mA
Protocol: Bluetooth v4.2
Power - Output: 12dBm
Voltage - Supply: 3.3V
Operating Temperature: -30°C ~ 85°C
Type: TxRx + MCU
Memory Size: 848kB ROM, 352kB RAM
Frequency: 2.4GHz
Mounting Type: Surface Mount
Sensitivity: -96.5dBm
Package / Case: 49-VFBGA, FCBGA
на замовлення 105000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2500+97.64 грн
Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
CYW20706UA1KFFB1G download
CYW20706UA1KFFB1G
Виробник: Infineon Technologies
Description: IC RF TXRX+MCU BLE 49FCBGA
Packaging: Tray
Package / Case: 49-VFBGA, FCBGA
Sensitivity: -96.5dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 848kB ROM, 352kB RAM
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 3.3V
Power - Output: 12dBm
Protocol: Bluetooth v4.2
Current - Receiving: 12.5mA
Data Rate (Max): 2Mbps
Current - Transmitting: 26.5mA
Supplier Device Package: 49-FCBGA (4.5x4)
GPIO: 7
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, I2S, SPI, UART
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 980 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
3+105.39 грн
10+87.60 грн
25+82.65 грн
100+71.20 грн
490+64.73 грн
980+62.18 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
CYW20706UA1KFFB1GT download
CYW20706UA1KFFB1GT
Виробник: Infineon Technologies
Description: IC RF TXRX+MCU BLE 49FCBGA
DigiKey Programmable: Not Verified
Serial Interfaces: I2C, I2S, SPI, UART
RF Family/Standard: Bluetooth
GPIO: 7
Supplier Device Package: 49-FCBGA (4.5x4)
Current - Transmitting: 26.5mA
Data Rate (Max): 2Mbps
Current - Receiving: 12.5mA
Protocol: Bluetooth v4.2
Power - Output: 12dBm
Voltage - Supply: 3.3V
Operating Temperature: -30°C ~ 85°C
Type: TxRx + MCU
Memory Size: 848kB ROM, 352kB RAM
Frequency: 2.4GHz
Mounting Type: Surface Mount
Sensitivity: -96.5dBm
Package / Case: 49-VFBGA, FCBGA
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
CYW20706UA1KFFB4G download
CYW20706UA1KFFB4G
Виробник: Infineon Technologies
Description: IC RF TXRX+MCU BLE 49FCBGA
Packaging: Tray
Package / Case: 49-VFBGA, FCBGA
Sensitivity: -96.5dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 848kB ROM, 352kB RAM
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 3.3V
Power - Output: 12dBm
Protocol: Bluetooth v4.2
Current - Receiving: 12.5mA
Data Rate (Max): 2Mbps
Current - Transmitting: 26.5mA
Supplier Device Package: 49-FCBGA (4.5x4)
GPIO: 7
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, I2S, SPI, UART
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 2450 шт
В кошику  од. на суму  грн.
CY7C1327G-166AXC Infineon-CY7C1327G_4-Mbit_(256_K_18)_Pipelined_Sync_SRAM-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec41d4b3988
CY7C1327G-166AXC
Виробник: Infineon Technologies
Description: IC SRAM 4.5MBIT PAR 100TQFP
DigiKey Programmable: Not Verified
Memory Organization: 256K x 18
Access Time: 3.5 ns
Memory Interface: Parallel
Supplier Device Package: 100-TQFP (14x20)
Memory Format: SRAM
Clock Frequency: 166 MHz
Technology: SRAM - Synchronous, SDR
Voltage - Supply: 3.15V ~ 3.6V
Operating Temperature: 0°C ~ 70°C (TA)
Memory Type: Volatile
Memory Size: 4.5Mbit
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Packaging: Tray
на замовлення 348 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2+161.96 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IMW65R072M1HXKSA1 Infineon-IMW65R072M1H-DataSheet-v02_00-EN.pdf?fileId=5546d4626f229553016f85c9c62a0482
IMW65R072M1HXKSA1
Виробник: Infineon Technologies
Description: MOSFET 650V NCH SIC TRENCH
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 94mOhm @ 13.3A, 18V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 4mA
Supplier Device Package: PG-TO247-3-41
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 744 pF @ 400 V
на замовлення 220 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+497.49 грн
30+277.24 грн
120+232.89 грн
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BSP78E6327
BSP78E6327
Виробник: Infineon Technologies
Description: POWER SWITCH SMART LOW
Packaging: Bulk
Part Status: Active
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BTS141NKSA1 INFNS27674-1.pdf?t.download=true&u=5oefqw
BTS141NKSA1
Виробник: Infineon Technologies
Description: BUFFER/INVERTER PERIPHL DRIVER
Features: Auto Restart, Slew Rate Controlled
Packaging: Bulk
Package / Case: TO-220-3
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 25mOhm
Input Type: Non-Inverting
Voltage - Load: 60V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 12A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO220-3-1
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, Short Circuit
Part Status: Active
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BTS141E3045ANTMA1 INFNS27674-1.pdf?t.download=true&u=5oefqw
Виробник: Infineon Technologies
Description: BUFFER/INVERTER PERIPHL DRIVER
Features: Auto Restart, Slew Rate Controlled
Packaging: Bulk
Package / Case: TO-220-3
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 25mOhm
Input Type: Non-Inverting
Voltage - Load: 60V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 12A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO220-3
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, Short Circuit
Part Status: Active
на замовлення 19358 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
118+169.28 грн
Мінімальне замовлення: 118 шт
В кошику  од. на суму  грн.
BSL211SPL6327 INFNS17497-1.pdf?t.download=true&u=5oefqw
BSL211SPL6327
Виробник: Infineon Technologies
Description: P-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta)
Rds On (Max) @ Id, Vgs: 67mOhm @ 4.7A, 4.5V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 25µA
Supplier Device Package: PG-TSOP6-6-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 654 pF @ 15 V
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IPLK70R600P7ATMA1 infineon-iplk70r600p7-datasheet-en.pdf
IPLK70R600P7ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 700V TDSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Supplier Device Package: PG-TDSON-8
Part Status: Active
Drain to Source Voltage (Vdss): 700 V
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.
AUIRFP46310Z
Виробник: Infineon Technologies
Description: AUTOMOTIVE POWER MOSFET
Part Status: Active
Packaging: Bulk
товару немає в наявності
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BTS282ZE3180AATMA1 INFNS27932-1.pdf?t.download=true&u=5oefqw
BTS282ZE3180AATMA1
Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 232 nC @ 10 V
Drain to Source Voltage (Vdss): 49 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TO263-7-1
Vgs(th) (Max) @ Id: 2V @ 240µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 36A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Packaging: Bulk
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BTS282ZE3230 INFNS27932-1.pdf?t.download=true&u=5oefqw
Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Drain to Source Voltage (Vdss): 49 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TO220-7-12
Vgs(th) (Max) @ Id: 2V @ 240µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 36A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-7
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 232 nC @ 10 V
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BTS282ZE3180A INFNS27932-1.pdf?t.download=true&u=5oefqw
BTS282ZE3180A
Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 232 nC @ 10 V
Drain to Source Voltage (Vdss): 49 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TO263-7-1
Vgs(th) (Max) @ Id: 2V @ 240µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 36A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
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BTS282ZE3180ANTMA1 INFNS27932-1.pdf?t.download=true&u=5oefqw
BTS282ZE3180ANTMA1
Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 232 nC @ 10 V
Drain to Source Voltage (Vdss): 49 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TO263-7-1
Vgs(th) (Max) @ Id: 2V @ 240µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 36A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Packaging: Bulk
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BTS7741G INFNS25530-1.pdf?t.download=true&u=5oefqw
BTS7741G
Виробник: Infineon Technologies
Description: IC HALF BRIDGE DRIVER 7A PDSO28
Features: Slew Rate Controlled, Status Flag
Packaging: Bulk
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 1.8V ~ 42V
Rds On (Typ): 100mOhm LS, 110mOhm HS
Applications: DC Motors, General Purpose
Current - Output / Channel: 7A
Current - Peak Output: 10A
Technology: DMOS
Voltage - Load: 1.8V ~ 42V
Supplier Device Package: P-DSO-28
Fault Protection: Current Limiting, ESD, Open Load Detect, Over Temperature, Short Circuit, UVLO
Load Type: Inductive
Part Status: Active
на замовлення 245 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
130+152.13 грн
Мінімальне замовлення: 130 шт
В кошику  од. на суму  грн.
BTS7750G INFNS03487-1.pdf?t.download=true&u=5oefqw
BTS7750G
Виробник: Infineon Technologies
Description: BRUSH DC MOTOR CONTROLLER
Packaging: Bulk
Part Status: Active
товару немає в наявності
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AIGB40N65H5ATMA1 Infineon-Semiconductor_solutions_for_hybrid_electric_and_electric_cars-ABR-v01_00-EN.pdf?fileId=5546d46269e1c019016a4a76250c4ab4
AIGB40N65H5ATMA1
Виробник: Infineon Technologies
Description: IGBT NPT 650V 40A TO263-3-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Input Type: Standard
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
TLI5012BE1000XUMA1 Infineon-TLI5012B+E1000-DS-v01_01-EN.pdf?fileId=5546d4624fb7fef2014ff423fcd077a8
TLI5012BE1000XUMA1
Виробник: Infineon Technologies
Description: SENSOR ANGLE 360DEG SMD
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Wheatstone Bridge
Operating Temperature: -40°C ~ 125°C
Termination Style: Gull Wing
Voltage - Supply: 3V ~ 5.5V
Actuator Type: External Magnet, Not Included
Technology: Magnetoresistive
For Measuring: Angle
Supplier Device Package: PG-DSO-8
Rotation Angle - Electrical, Mechanical: 0° ~ 360°, Continuous
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
на замовлення 5267 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2+215.42 грн
5+185.36 грн
10+177.08 грн
25+156.95 грн
50+150.66 грн
100+144.90 грн
500+131.11 грн
1000+127.41 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
BCM856SH6778 INFNS17175-1.pdf?t.download=true&u=5oefqw
BCM856SH6778
Виробник: Infineon Technologies
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Part Status: Active
Supplier Device Package: PG-SOT363-6-1
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Voltage - Collector Emitter Breakdown (Max): 65V
Current - Collector (Ic) (Max): 100mA
Power - Max: 250mW
Operating Temperature: 150°C (TJ)
Transistor Type: 2 PNP (Dual)
Mounting Type: Surface Mount
Package / Case: 6-VSSOP, SC-88, SOT-363
Packaging: Bulk
Qualification: AEC-Q101
Grade: Automotive
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
3000+8.48 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
IPW50R140CPFKSA1 IPW50R140CP_rev2.1.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42daa4448bf
IPW50R140CPFKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 550V 23A TO247-3
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 14A, 10V
Power Dissipation (Max): 192W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 930µA
Supplier Device Package: PG-TO247-3-1
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 550 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2540 pF @ 100 V
на замовлення 17881 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
81+246.97 грн
Мінімальне замовлення: 81 шт
В кошику  од. на суму  грн.
XMC4502-F100F768AB INFNS27688-1.pdf?t.download=true&u=5oefqw
XMC4502-F100F768AB
Виробник: Infineon Technologies
Description: 32-BIT MCU XMC4000 ARM CORTEX-M4
Packaging: Bulk
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 768KB (768K x 8)
RAM Size: 160K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 20x12b; D/A 2x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 3.13V ~ 3.63V
Connectivity: CANbus, EBI/EMI, I²C, LINbus, SPI, UART/USART, USB, USB OTG
Peripherals: DMA, I²S, LED, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-25
Part Status: Active
Number of I/O: 55
DigiKey Programmable: Not Verified
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BTS410E2E3062ANTMA1 INFNS30249-1.pdf?t.download=true&u=5oefqw
BTS410E2E3062ANTMA1
Виробник: Infineon Technologies
Description: BUFFER/INVERTER PERIPHL DRIVER
Features: Auto Restart, Slew Rate Controlled
Packaging: Bulk
Package / Case: TO-263-5, D²Pak (4 Leads + Tab), TO-263BB
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 190mOhm
Input Type: Non-Inverting
Voltage - Load: 4.7V ~ 42V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.8A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO263-5-2
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, UVLO
Part Status: Active
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TLE5011FUMA1 TLE5011_Final_Data_Sheet_V2.0.pdf?folderId=db3a30431ce5fb52011d3dd6e8012582&fileId=db3a30432ee77f32012f0c4368b5110e
TLE5011FUMA1
Виробник: Infineon Technologies
Description: SENSOR ANGLE 360DEG SMD
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Wheatstone Bridge
Operating Temperature: -40°C ~ 150°C
Termination Style: Gull Wing
Voltage - Supply: 3V ~ 5.5V
Actuator Type: External Magnet, Not Included
Technology: Magnetoresistive
For Measuring: Angle
Supplier Device Package: PG-DSO-8
Rotation Angle - Electrical, Mechanical: 0° ~ 360°, Continuous
Grade: Automotive
Part Status: Last Time Buy
Qualification: AEC-Q100
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TLE5011FUMA1 TLE5011_Final_Data_Sheet_V2.0.pdf?folderId=db3a30431ce5fb52011d3dd6e8012582&fileId=db3a30432ee77f32012f0c4368b5110e
TLE5011FUMA1
Виробник: Infineon Technologies
Description: SENSOR ANGLE 360DEG SMD
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Wheatstone Bridge
Operating Temperature: -40°C ~ 150°C
Termination Style: Gull Wing
Voltage - Supply: 3V ~ 5.5V
Actuator Type: External Magnet, Not Included
Technology: Magnetoresistive
For Measuring: Angle
Supplier Device Package: PG-DSO-8
Rotation Angle - Electrical, Mechanical: 0° ~ 360°, Continuous
Grade: Automotive
Part Status: Last Time Buy
Qualification: AEC-Q100
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IR3824MTRPBF IR3824_Rev3.7_3-24-16.pdf
Виробник: Infineon Technologies
Description: IC REG BUCK CTRLR PQFN
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AUIRLR120NTRL INFN-S-A0002298945-1.pdf?t.download=true&u=5oefqw
AUIRLR120NTRL
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 10A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 6A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Grade: Automotive
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V
Qualification: AEC-Q101
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BC857CB5000 INFNS16508-1.pdf?t.download=true&u=5oefqw
BC857CB5000
Виробник: Infineon Technologies
Description: TRANS PNP 45V 0.1A PG-SOT23-3-1
Packaging: Bulk
Part Status: Active
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23-3-1
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 330 mW
Qualification: AEC-Q101
на замовлення 540000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
8955+2.04 грн
Мінімальне замовлення: 8955 шт
В кошику  од. на суму  грн.
BUZ73AHXKSA1 INFNS13418-1.pdf?t.download=true&u=5oefqw
BUZ73AHXKSA1
Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.5A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 25 V
на замовлення 10823 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
489+40.83 грн
Мінімальне замовлення: 489 шт
В кошику  од. на суму  грн.
BUZ73ALHXKSA1 BUZ73AL_H.pdf
BUZ73ALHXKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 200V 5.5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 5V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 25 V
на замовлення 5454 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
489+40.48 грн
Мінімальне замовлення: 489 шт
В кошику  од. на суму  грн.
BUZ73AH3046 INFNS13418-1.pdf?t.download=true&u=5oefqw
BUZ73AH3046
Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Part Status: Active
Supplier Device Package: PG-TO220-3-1
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 40W (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 25 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
на замовлення 12135 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
693+30.69 грн
Мінімальне замовлення: 693 шт
В кошику  од. на суму  грн.
BUZ73AIN INFNS13418-1.pdf?t.download=true&u=5oefqw
Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 25 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO220-3-1
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 40W (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
на замовлення 966 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
590+34.13 грн
Мінімальне замовлення: 590 шт
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BUZ73ALIN INFNS13419-1.pdf?t.download=true&u=5oefqw
Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
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BUZ73AE3046 INFNS11956-1.pdf?t.download=true&u=5oefqw
Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 25 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO220-3-1
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 40W (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bulk
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SN7002NE6327 SN7002N.pdf?t.download=true&u=5oefqw
SN7002NE6327
Виробник: Infineon Technologies
Description: SMALL SIGNAL N-CHANNEL MOSFET
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 26µA
Supplier Device Package: PG-SOT23-3-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 25 V
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SN7002NH6433XTMA1 Infineon-SN7002N-DS-v02_06-en.pdf?fileId=db3a304330f6860601311934e76045d5
SN7002NH6433XTMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 200MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 26µA
Supplier Device Package: PG-SOT23
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 25 V
Qualification: AEC-Q101
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SN7002NH6433XTMA1 Infineon-SN7002N-DS-v02_06-en.pdf?fileId=db3a304330f6860601311934e76045d5
SN7002NH6433XTMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 200MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 26µA
Supplier Device Package: PG-SOT23
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 25 V
Qualification: AEC-Q101
на замовлення 8977 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
16+19.37 грн
26+11.57 грн
100+7.18 грн
500+4.94 грн
1000+4.36 грн
2000+3.86 грн
5000+3.27 грн
Мінімальне замовлення: 16 шт
В кошику  од. на суму  грн.
SN7002N E6327 SN7002N.pdf
SN7002N E6327
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 200MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 26µA
Supplier Device Package: PG-SOT23
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 25 V
Qualification: AEC-Q101
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SN7002N E6433 SN7002N.pdf
SN7002N E6433
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 200MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 26µA
Supplier Device Package: PG-SOT23
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 25 V
Qualification: AEC-Q101
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SN7002NH6327XTSA1 Infineon-SN7002N-DS-v02_06-en.pdf?fileId=db3a304330f6860601311934e76045d5
SN7002NH6327XTSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 200MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 26µA
Supplier Device Package: PG-SOT23
Grade: Automotive
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 25 V
Qualification: AEC-Q101
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SN7002NH6327XTSA1 Infineon-SN7002N-DS-v02_06-en.pdf?fileId=db3a304330f6860601311934e76045d5
SN7002NH6327XTSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 200MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 26µA
Supplier Device Package: PG-SOT23
Grade: Automotive
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 25 V
Qualification: AEC-Q101
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IRF1310NSPBF-INF
IRF1310NSPBF-INF
Виробник: Infineon Technologies
Description: HEXFET POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 22A, 10V
Power Dissipation (Max): 3.8W (Ta), 160W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
товару немає в наявності
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