Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (129573) > Сторінка 350 з 2160

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IPD50R1K4CEAUMA1 IPD50R1K4CEAUMA1 Infineon Technologies Infineon-IPD50R1K4CE-DS-v02_03-EN.pdf?fileId=db3a304339dcf4b10139e7c997862ca7 Description: MOSFET N-CH 500V 3.1A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 900mA, 13V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 70µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 178 pF @ 100 V
на замовлення 4935 шт:
термін постачання 21-31 дні (днів)
8+45.13 грн
10+37.13 грн
100+25.81 грн
500+18.91 грн
1000+15.37 грн
Мінімальне замовлення: 8 шт
В кошику  од. на суму  грн.
IPD50R650CEAUMA1 IPD50R650CEAUMA1 Infineon Technologies Infineon-IPD50R650CE-DS-v02_03-EN.pdf?fileId=db3a304339d29c450139d41341a202a1 Description: MOSFET N-CH 500V 9A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 1.8A, 13V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 150µA
Supplier Device Package: PG-TO252-3-344
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 342 pF @ 100 V
на замовлення 1223 шт:
термін постачання 21-31 дні (днів)
4+86.31 грн
10+53.60 грн
100+35.24 грн
500+26.18 грн
1000+23.59 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
IPD50R650CEBTMA1 IPD50R650CEBTMA1 Infineon Technologies Infineon-IPD50R650CE-DS-v02_03-EN.pdf?fileId=db3a304339d29c450139d41341a202a1 Description: MOSFET N-CH 500V 6.1A TO252-3
товару немає в наявності
 Мінімальне замовлення: 760 шт
В кошику  од. на суму  грн.
IPC70N04S54R6ATMA1 IPC70N04S54R6ATMA1 Infineon Technologies Infineon-IPC70N04S5-4R6-DS-v01_00-EN.pdf?fileId=5546d46258fc0bc101590801e625290d Description: MOSFET N-CH 40V 70A 8TDSON-34
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 35A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 17µA
Supplier Device Package: PG-TDSON-8-34
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 24.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1430 pF @ 25 V
Qualification: AEC-Q101
на замовлення 3994 шт:
термін постачання 21-31 дні (днів)
4+93.43 грн
10+56.35 грн
100+37.28 грн
500+27.32 грн
1000+24.69 грн
2000+23.28 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
IPP070N08N3GXKSA1 IPP070N08N3GXKSA1 Infineon Technologies INFN-S-A0001300127-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 73A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 73µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3840 pF @ 40 V
на замовлення 7700 шт:
термін постачання 21-31 дні (днів)
212+107.49 грн
Мінімальне замовлення: 212 шт
В кошику  од. на суму  грн.
SAF-XC164TM-16F20F BA SAF-XC164TM-16F20F BA Infineon Technologies XC164TM.pdf Description: IC MCU 16BIT 128KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 20MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 14x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 2.35V ~ 2.7V
Connectivity: SPI, UART/USART
Peripherals: PWM, WDT
Supplier Device Package: PG-LQFP-64-4
Part Status: Obsolete
Number of I/O: 47
DigiKey Programmable: Not Verified
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SAF-XC164TM-16F40F BA SAF-XC164TM-16F40F BA Infineon Technologies XC164TM.pdf Description: IC MCU 16BIT 128KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 14x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 2.35V ~ 2.7V
Connectivity: SPI, UART/USART
Peripherals: PWM, WDT
Supplier Device Package: PG-LQFP-64-4
Part Status: Obsolete
Number of I/O: 47
DigiKey Programmable: Not Verified
товару немає в наявності
 Мінімальне замовлення: 960 шт
В кошику  од. на суму  грн.
BSO040N03MSGXUMA1 BSO040N03MSGXUMA1 Infineon Technologies infineon-bso040n03ms-g-datasheet-en.pdf Description: MOSFET N-CH 30V 16A 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-DSO-8
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 15 V
на замовлення 337 шт:
термін постачання 21-31 дні (днів)
3+153.61 грн
10+94.78 грн
50+71.55 грн
100+60.13 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
IR25604SPBF-INF IR25604SPBF-INF Infineon Technologies IRSDS13486-1.pdf?t.download=true&u=5oefqw Description: HIGH AND LOW SIDE DRIVER
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 150ns, 50ns
Channel Type: Independent
Driven Configuration: High-Side and Low-Side
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.9V
Current - Peak Output (Source, Sink): 200mA, 350mA
Part Status: Active
DigiKey Programmable: Not Verified
товару немає в наявності
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IR25606SPBF-INF IR25606SPBF-INF Infineon Technologies IRSDS19323-1.pdf?t.download=true&u=5oefqw Description: HALF BRIDGE BASED PERIPHERAL DRI
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 150ns, 50ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.9V
Current - Peak Output (Source, Sink): 200mA, 350mA
Part Status: Active
DigiKey Programmable: Not Verified
товару немає в наявності
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BC808-40WE6327 BC808-40WE6327 Infineon Technologies INFNS11647-1.pdf?t.download=true&u=5oefqw Description: TRANS PNP 25V 0.5A PG-SOT23-3-11
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: PG-SOT23-3-11
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 250 mW
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)
8955+2.26 грн
Мінімальне замовлення: 8955 шт
В кошику  од. на суму  грн.
BC808-40W BC808-40W Infineon Technologies INFNS11647-1.pdf?t.download=true&u=5oefqw Description: TRANS PNP 25V 0.5A SOT23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: PG-SOT23-3-11
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 250 mW
товару немає в наявності
 Мінімальне замовлення: 6000 шт
В кошику  од. на суму  грн.
BC808-40E6327 Infineon Technologies INFNS11647-1.pdf?t.download=true&u=5oefqw Description: TRANS PNP 25V 0.5A SOT23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: PG-SOT23-3-11
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 330 mW
товару немає в наявності
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BGSX24MU16E6327XUSA1 BGSX24MU16E6327XUSA1 Infineon Technologies Infineon-BGSX24MU16-DataSheet-v02_01-EN.pdf?fileId=5546d4627448fb2b017468b01dad7214 Description: IC RF SWITCH DP4T 5GHZ ULGA16-1
Packaging: Tape & Reel (TR)
Package / Case: 16-UFLGA Exposed Pad
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: DP4T
RF Type: GSM, LTE, W-CDMA
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.4V
Insertion Loss: 1dB
Frequency Range: 100MHz ~ 5GHz
Test Frequency: 5GHz
Isolation: 34dB
Supplier Device Package: PG-ULGA-16-1
IIP3: 77dBm
Part Status: Active
товару немає в наявності
 Мінімальне замовлення: 4500 шт
В кошику  од. на суму  грн.
BSZ105N04NSG BSZ105N04NSG Infineon Technologies INFNS16243-1.pdf?t.download=true&u=5oefqw Description: OPTLMOS POWER-MOSFET
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 14µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 20 V
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IRLU3636-701TRP Infineon Technologies Part_Number_Guide_Web.pdf Description: MOSFET N-CH 60V 50A IPAK
Packaging: Tube
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BFP420H6433XTMA1 BFP420H6433XTMA1 Infineon Technologies BFP420_Rev2013.pdf Description: RF TRANS NPN 5V 25GHZ PG-SOT-343
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 21dB
Power - Max: 160mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 4V
Frequency - Transition: 25GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1.8GHz
Supplier Device Package: PG-SOT343-3D
Part Status: Active
товару немає в наявності
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BFP420H6433XTMA1 BFP420H6433XTMA1 Infineon Technologies BFP420_Rev2013.pdf Description: RF TRANS NPN 5V 25GHZ PG-SOT-343
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 21dB
Power - Max: 160mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 4V
Frequency - Transition: 25GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1.8GHz
Supplier Device Package: PG-SOT343-3D
Part Status: Active
на замовлення 6287 шт:
термін постачання 21-31 дні (днів)
10+31.67 грн
15+21.73 грн
25+19.43 грн
100+15.81 грн
250+14.65 грн
500+13.95 грн
1000+13.16 грн
2500+12.57 грн
5000+12.21 грн
Мінімальне замовлення: 10 шт
В кошику  од. на суму  грн.
TLE42712GATMA TLE42712GATMA Infineon Technologies Infineon-TLE4271-2-DS-v02_70-EN.pdf?fileId=5546d46259d9a4bf0159f97a56393e6f Description: IC REG LINEAR FIXED LDO REG
Packaging: Bulk
Package / Case: TO-220-7 Formed Leads
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 550mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: P-TO220-7-11
Voltage - Output (Min/Fixed): 5V
Control Features: Delay, Inhibit, Reset, Watchdog
Part Status: Active
PSRR: 54dB (100Hz)
Voltage Dropout (Max): 0.7V @ 550mA
Protection Features: Antisaturation, Over Temperature, Over Voltage, Reverse Polarity, Short Circuit
Current - Supply (Max): 90 mA
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IAUC24N10S5L300ATMA1 IAUC24N10S5L300ATMA1 Infineon Technologies infineon-iauc24n10s5l300-datasheet-en.pdf Description: MOSFET N-CH 100V 24A TDSON-8-33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 12A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 12µA
Supplier Device Package: PG-TDSON-8-33
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 50 V
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
5000+24.55 грн
Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.
FS75R07W2E3B11ABOMA1 FS75R07W2E3B11ABOMA1 Infineon Technologies Infineon-FS75R07W2E3_B11A-DS-v03_00-en_de.pdf?fileId=db3a3043345a30bc01345aebc79e0071 Description: IGBT MODULES
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: ACEPACK™ 2
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 95 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 275 W
Current - Collector Cutoff (Max): 50 µA
Input Capacitance (Cies) @ Vce: 4.6 nF @ 25 V
товару немає в наявності
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ICE3AR1080JGXUMA1 ICE3AR1080JGXUMA1 Infineon Technologies Infineon-ICE3AR1080JG-DS-v01_00-EN.pdf?fileId=5546d46253f6505701549aaf4c0d7510 Description: IC OFFLINE SWITCH FLYBACK 12DSO
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10.5V ~ 25V
Supplier Device Package: PG-DSO-12-19
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 17.3 V
Part Status: Active
Power (Watts): 62 W
на замовлення 17500 шт:
термін постачання 21-31 дні (днів)
2500+94.77 грн
5000+89.42 грн
Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
ICE3AR1080JGXUMA1 ICE3AR1080JGXUMA1 Infineon Technologies Infineon-ICE3AR1080JG-DS-v01_00-EN.pdf?fileId=5546d46253f6505701549aaf4c0d7510 Description: IC OFFLINE SWITCH FLYBACK 12DSO
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10.5V ~ 25V
Supplier Device Package: PG-DSO-12-19
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 17.3 V
Part Status: Active
Power (Watts): 62 W
на замовлення 21809 шт:
термін постачання 21-31 дні (днів)
2+181.32 грн
10+130.00 грн
25+118.88 грн
100+100.05 грн
250+94.56 грн
500+92.37 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
FS400R12A2T4BOSA1 FS400R12A2T4BOSA1 Infineon Technologies fundamentals-of-power-semiconductors Description: IGBT MODULES
Packaging: Tray
товару немає в наявності
 Мінімальне замовлення: 3 шт
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MB89133APFM-G-1019E1 Infineon Technologies ProductGuide_2008.1.pdf Description: IC MCU 8BIT 8KB MROM 48QFP
Packaging: Tray
Package / Case: 48-QFP
Mounting Type: Surface Mount
Speed: 4.2MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: F²MC-8L
Data Converters: A/D 4x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.2V ~ 6V
Connectivity: Serial I/O
Peripherals: POR, WDT
Supplier Device Package: 48-QFP (10x10)
Part Status: Obsolete
Number of I/O: 24
DigiKey Programmable: Not Verified
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MB89538APMC-G-1019-JNE1 MB89538APMC-G-1019-JNE1 Infineon Technologies ProductGuide_2008.1.pdf Description: IC MCU 8BIT 48KB MROM 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 12.5MHz
Program Memory Size: 48KB (48K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: F²MC-8L
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.2V ~ 5.5V
Connectivity: I²C, Serial I/O, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 64-LQFP (12x12)
Part Status: Obsolete
Number of I/O: 38
DigiKey Programmable: Not Verified
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IRFH8330TRPBF IRFH8330TRPBF Infineon Technologies irfh8330pbf.pdf?fileId=5546d462533600a40153561fc2dc1f1f Description: MOSFET N-CH 30V 17A/56A PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 56A (Tc)
Rds On (Max) @ Id, Vgs: 6.6mOhm @ 20A, 10V
Power Dissipation (Max): 3.3W (Ta), 35W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V
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BC857BWE6327 BC857BWE6327 Infineon Technologies INFNS16508-1.pdf?t.download=true&u=5oefqw Description: TRANS PNP 45V 0.1A PG-SOT323
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT323
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 250 mW
на замовлення 333000 шт:
термін постачання 21-31 дні (днів)
8955+2.33 грн
Мінімальне замовлення: 8955 шт
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BC857BWH6327 BC857BWH6327 Infineon Technologies INFNS16508-1.pdf?t.download=true&u=5oefqw Description: TRANS PNP 45V 0.1A SOT323-3
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT323-3-1
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 250 mW
на замовлення 57000 шт:
термін постачання 21-31 дні (днів)
6512+3.61 грн
Мінімальне замовлення: 6512 шт
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IR2154 IR2154 Infineon Technologies IR2154.pdf Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 15.6V
Input Type: RC Input Circuit
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 80ns, 45ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Part Status: Obsolete
DigiKey Programmable: Not Verified
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IR2154S IR2154S Infineon Technologies IR2154.pdf Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 15.6V
Input Type: RC Input Circuit
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 80ns, 45ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Part Status: Obsolete
DigiKey Programmable: Not Verified
товару немає в наявності
 Мінімальне замовлення: 95 шт
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IPB120N06S4H1ATMA2 IPB120N06S4H1ATMA2 Infineon Technologies Infineon-I120N06S4_H1-DS-v01_00-en.pdf?fileId=db3a30431ff988150120388c9cf60caf Description: MOSFET N-CH 60V 120A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 200µA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 21900 pF @ 25 V
Qualification: AEC-Q101
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TDA5255 Infineon Technologies Description: ASK/FSK 434 MHZ WIRELESS TRANSVR
Packaging: Bulk
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Sensitivity: -109dBm
Mounting Type: Surface Mount
Frequency: 434MHz
Type: TxRx Only
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.1V ~ 5.5V
Power - Output: 13dBm
Current - Receiving: 8.6mA ~ 9.5mA
Data Rate (Max): 100kbps
Current - Transmitting: 5.2mA ~ 17.4mA
Supplier Device Package: PG-TSSOP-38
Modulation: ASK, FSK
RF Family/Standard: General ISM < 1GHz
Serial Interfaces: I²C, SPI
Part Status: Active
DigiKey Programmable: Not Verified
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S26KL512SDABHB020 S26KL512SDABHB020 Infineon Technologies infineon-512mb-64mb256mb-32mb128mb-16mb1-8v-3-datasheet-cn.pdf Description: IC FLASH 512MBIT HYPERBUS 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 100 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Grade: Automotive
Part Status: Active
Memory Interface: HyperBus
Access Time: 96 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
на замовлення 1352 шт:
термін постачання 21-31 дні (днів)
1+2769.71 грн
10+2467.89 грн
25+2389.01 грн
50+2186.51 грн
100+2131.73 грн
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CY14B104NA-ZS45XE CY14B104NA-ZS45XE Infineon Technologies download Description: IC NVSRAM 4MBIT PAR 44TSOP II
Packaging: Tray
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 3V ~ 3.63V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
на замовлення 2553 шт:
термін постачання 21-31 дні (днів)
1+1182.95 грн
В кошику  од. на суму  грн.
CY14B104NA-BA20XI CY14B104NA-BA20XI Infineon Technologies download Description: IC NVSRAM 4MBIT PARALLEL 48FBGA
Packaging: Tray
Package / Case: 48-TFBGA
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 48-FBGA (6x10)
Write Cycle Time - Word, Page: 20ns
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
товару немає в наявності
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CY14B104NA-BA45XET CY14B104NA-BA45XET Infineon Technologies download Description: IC NVSRAM 4MBIT PARALLEL 48FBGA
Packaging: Tape & Reel (TR)
Package / Case: 48-TFBGA
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 48-FBGA (6x10)
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
товару немає в наявності
 Мінімальне замовлення: 2000 шт
В кошику  од. на суму  грн.
CY14B104NA-ZS25XET CY14B104NA-ZS25XET Infineon Technologies download Description: IC NVSRAM 4MBIT PAR 44TSOP II
Packaging: Tape & Reel (TR)
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Access Time: 25 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
товару немає в наявності
 Мінімальне замовлення: 1000 шт
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CY14B104NA-ZS45XE CY14B104NA-ZS45XE Infineon Technologies download Description: IC NVSRAM 4MBIT PAR 44TSOP II
Packaging: Tray
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 3V ~ 3.63V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
товару немає в наявності
 Мінімальне замовлення: 135 шт
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CY14B104NA-ZS25XE CY14B104NA-ZS25XE Infineon Technologies download Description: IC NVSRAM 4MBIT PAR 44TSOP II
Packaging: Tray
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Access Time: 25 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
товару немає в наявності
 Мінімальне замовлення: 270 шт
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DF23MR12W1M1PB11BPSA1 DF23MR12W1M1PB11BPSA1 Infineon Technologies Infineon-DF23MR12W1M1P_B11-DataSheet-v02_00-EN.pdf?fileId=5546d462712ef9b7017153f0de295eb5 Description: MOSFET 2N-CH 1200V 25A AG-EASY1B
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 25A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 1840pF @ 800V
Rds On (Max) @ Id, Vgs: 45mOhm @ 25A, 15V
Gate Charge (Qg) (Max) @ Vgs: 62nC @ 15V
Vgs(th) (Max) @ Id: 5.55V @ 10mA
Supplier Device Package: AG-EASY1B-2
Part Status: Obsolete
на замовлення 24 шт:
термін постачання 21-31 дні (днів)
1+6035.08 грн
В кошику  од. на суму  грн.
SIPC03S2N03LX3MA1 Infineon Technologies Description: LV POWER MOS
товару немає в наявності
 Мінімальне замовлення: 5000 шт
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BSB012N03LX3 G BSB012N03LX3 G Infineon Technologies BSB012N03LX3G.pdf Description: MOSFET N-CH 30V 39A/180A 2WDSON
Packaging: Tape & Reel (TR)
Package / Case: 3-WDSON
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 30A, 10V
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: MG-WDSON-2, CanPAK M™
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 169 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16900 pF @ 15 V
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T830N12TOFXPSA1 T830N12TOFXPSA1 Infineon Technologies T830N.pdf Description: SCR MODULE 1.8KV 1500A DO-200AB
Packaging: Tray
Package / Case: DO-200AB, B-PUK
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 14500A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 844 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (RMS)) (Max): 1500 A
Voltage - Off State: 1.8 kV
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
2+8231.53 грн
Мінімальне замовлення: 2 шт
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IRFR1018EPBF-INF Infineon Technologies Description: HEXFET POWER MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 47A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: D-PAK (TO-252AA)
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2290 pF @ 50 V
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CY2304NZZXC-1 CY2304NZZXC-1 Infineon Technologies Infineon-CY2304NZ_Four_Output_PCI-X_and_General_Purpose_Buffer-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebcd7a92ea3&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC ZD BUFFER PCIE 8-TSSOP
Packaging: Tube
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 140MHz
Input: LVCMOS, LVTTL
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Main Purpose: PCI Express (PCIe)
Ratio - Input:Output: 1:4
Differential - Input:Output: No/No
Supplier Device Package: 8-TSSOP
PLL: No
Number of Circuits: 1
DigiKey Programmable: Not Verified
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
2+174.99 грн
Мінімальне замовлення: 2 шт
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BTS409L1CHIPX2LA1 BTS409L1CHIPX2LA1 Infineon Technologies Description: AUTOMOTIVE HIGH SIDE SWITCH
Packaging: Bulk
Part Status: Active
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TLE4473GV53AUMA2 TLE4473GV53AUMA2 Infineon Technologies infineon-tle4473g-v53-datasheet-en.pdf Description: IC REG LINEAR 3.3V/5V DSO12-6
Packaging: Tape & Reel (TR)
Package / Case: 12-BSOP (0.295", 7.50mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA, 180mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 265 µA
Voltage - Input (Max): 42V
Number of Regulators: 2
Supplier Device Package: P-DSO-12-6
Voltage - Output (Min/Fixed): 3.3V, 5V
Control Features: Inhibit, Reset, Watchdog
Grade: Automotive
Part Status: Active
PSRR: 65dB (100Hz), 65dB (100Hz)
Voltage Dropout (Max): -, 0.6V @ 100mA
Protection Features: Over Current, Over Temperature, Short Circuit, Transient Voltage
Current - Supply (Max): 20 mA
Qualification: AEC-Q100
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
1000+130.42 грн
2000+122.55 грн
3000+121.03 грн
Мінімальне замовлення: 1000 шт
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TLE4473GV53AUMA2 TLE4473GV53AUMA2 Infineon Technologies infineon-tle4473g-v53-datasheet-en.pdf Description: IC REG LINEAR 3.3V/5V DSO12-6
Packaging: Cut Tape (CT)
Package / Case: 12-BSOP (0.295", 7.50mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA, 180mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 265 µA
Voltage - Input (Max): 42V
Number of Regulators: 2
Supplier Device Package: P-DSO-12-6
Voltage - Output (Min/Fixed): 3.3V, 5V
Control Features: Inhibit, Reset, Watchdog
Grade: Automotive
Part Status: Active
PSRR: 65dB (100Hz), 65dB (100Hz)
Voltage Dropout (Max): -, 0.6V @ 100mA
Protection Features: Over Current, Over Temperature, Short Circuit, Transient Voltage
Current - Supply (Max): 20 mA
Qualification: AEC-Q100
на замовлення 4938 шт:
термін постачання 21-31 дні (днів)
2+236.75 грн
10+171.02 грн
25+156.86 грн
100+132.54 грн
250+125.55 грн
500+123.88 грн
Мінімальне замовлення: 2 шт
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TLE92623QXXUMA1 TLE92623QXXUMA1 Infineon Technologies fundamentals-of-power-semiconductors Description: IC INTERFACE SPECIALIZED 48VQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: SPI
Supplier Device Package: PG-VQFN-48-31
Grade: Automotive
Part Status: Not For New Designs
товару немає в наявності
 Мінімальне замовлення: 2500 шт
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IRFR3709ZTRLPBF IRFR3709ZTRLPBF Infineon Technologies irfr3709zpbf.pdf?fileId=5546d462533600a401535631a47a20c5 Description: MOSFET N-CH 30V 86A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 15A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2.25V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2330 pF @ 15 V
товару немає в наявності
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BTN7960BAUMA1 BTN7960BAUMA1 Infineon Technologies fundamentals-of-power-semiconductors Description: IC MOTOR DRIVER 8V-18V TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 47A
Interface: On/Off
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 8V ~ 18V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 8V ~ 18V
Supplier Device Package: PG-TO263-7-1
Motor Type - AC, DC: Brushed DC
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BTS282ZDELCO BTS282ZDELCO Infineon Technologies INFNS13361-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-7 Formed Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 36A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 2V @ 240µA
Supplier Device Package: P-TO220-7-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 49 V
Gate Charge (Qg) (Max) @ Vgs: 232 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
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IRFS7430TRLPBF IRFS7430TRLPBF Infineon Technologies infineon-irfs7430-datasheet-en.pdf Description: MOSFET N-CH 40V 195A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 460 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14240 pF @ 25 V
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
800+111.94 грн
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
IRFS7430TRLPBF IRFS7430TRLPBF Infineon Technologies infineon-irfs7430-datasheet-en.pdf Description: MOSFET N-CH 40V 195A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 460 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14240 pF @ 25 V
на замовлення 926 шт:
термін постачання 21-31 дні (днів)
2+309.59 грн
10+195.88 грн
50+152.13 грн
100+129.54 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IPB65R660CFDAATMA1 IPB65R660CFDAATMA1 Infineon Technologies INFN-S-A0003823031-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 650V 6A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 660mOhm @ 3.2A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 200µA
Supplier Device Package: PG-TO263-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 543 pF @ 100 V
Qualification: AEC-Q101
на замовлення 4006 шт:
термін постачання 21-31 дні (днів)
2+192.41 грн
10+119.40 грн
100+81.84 грн
500+61.74 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IPB65R660CFDATMA1 IPB65R660CFDATMA1 Infineon Technologies IPx65R660CFD.pdf Description: MOSFET N-CH 650V 6A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 660mOhm @ 2.1A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 200µA
Supplier Device Package: PG-TO263-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 615 pF @ 100 V
на замовлення 97 шт:
термін постачання 21-31 дні (днів)
3+124.31 грн
10+107.74 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
BAS1602VH6327XTSA1 BAS1602VH6327XTSA1 Infineon Technologies bas16series.pdf?folderId=db3a30431400ef6801141b5844e103ea&fileId=db3a30431400ef6801141b93811b03ff Description: DIODE STANDARD 80V 200MA PGSC792
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: PG-SC79-2
Operating Temperature - Junction: 150°C (Max)
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
на замовлення 1560 шт:
термін постачання 21-31 дні (днів)
50+6.33 грн
86+3.58 грн
105+2.93 грн
Мінімальне замовлення: 50 шт
В кошику  од. на суму  грн.
BAS7002VH6327XTSA1 BAS7002VH6327XTSA1 Infineon Technologies INFNS30154-1.pdf?t.download=true&u=5oefqw Description: DIODE SCHOTTKY 70V 70MA PGSC7921
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 100 ps
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 70mA
Supplier Device Package: PG-SC79-2-1
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Qualification: AEC-Q101
на замовлення 28988 шт:
термін постачання 21-31 дні (днів)
13+26.13 грн
21+15.17 грн
50+10.93 грн
100+8.95 грн
500+6.64 грн
Мінімальне замовлення: 13 шт
В кошику  од. на суму  грн.
BAT6202VH6327XTSA1 BAT6202VH6327XTSA1 Infineon Technologies Infineon-BAT62-02V-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7e7124d1017eb4959b1821f7 Description: DIODE SCHOTTKY 40V 20MA PGSC7921
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 0.6pF @ 0V, 1MHz
Current - Average Rectified (Io): 20mA
Supplier Device Package: PG-SC79-2-1
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 mA
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
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IPD50R1K4CEAUMA1 Infineon-IPD50R1K4CE-DS-v02_03-EN.pdf?fileId=db3a304339dcf4b10139e7c997862ca7
IPD50R1K4CEAUMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 500V 3.1A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 900mA, 13V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 70µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 178 pF @ 100 V
на замовлення 4935 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
8+45.13 грн
10+37.13 грн
100+25.81 грн
500+18.91 грн
1000+15.37 грн
Мінімальне замовлення: 8 шт
В кошику  од. на суму  грн.
IPD50R650CEAUMA1 Infineon-IPD50R650CE-DS-v02_03-EN.pdf?fileId=db3a304339d29c450139d41341a202a1
IPD50R650CEAUMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 500V 9A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 1.8A, 13V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 150µA
Supplier Device Package: PG-TO252-3-344
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 342 pF @ 100 V
на замовлення 1223 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
4+86.31 грн
10+53.60 грн
100+35.24 грн
500+26.18 грн
1000+23.59 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
IPD50R650CEBTMA1 Infineon-IPD50R650CE-DS-v02_03-EN.pdf?fileId=db3a304339d29c450139d41341a202a1
IPD50R650CEBTMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 500V 6.1A TO252-3
товару немає в наявності
Мінімальне замовлення: 760 шт
В кошику  од. на суму  грн.
IPC70N04S54R6ATMA1 Infineon-IPC70N04S5-4R6-DS-v01_00-EN.pdf?fileId=5546d46258fc0bc101590801e625290d
IPC70N04S54R6ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 70A 8TDSON-34
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 35A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 17µA
Supplier Device Package: PG-TDSON-8-34
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 24.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1430 pF @ 25 V
Qualification: AEC-Q101
на замовлення 3994 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
4+93.43 грн
10+56.35 грн
100+37.28 грн
500+27.32 грн
1000+24.69 грн
2000+23.28 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
IPP070N08N3GXKSA1 INFN-S-A0001300127-1.pdf?t.download=true&u=5oefqw
IPP070N08N3GXKSA1
Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 73A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 73µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3840 pF @ 40 V
на замовлення 7700 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
212+107.49 грн
Мінімальне замовлення: 212 шт
В кошику  од. на суму  грн.
SAF-XC164TM-16F20F BA XC164TM.pdf
SAF-XC164TM-16F20F BA
Виробник: Infineon Technologies
Description: IC MCU 16BIT 128KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 20MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 14x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 2.35V ~ 2.7V
Connectivity: SPI, UART/USART
Peripherals: PWM, WDT
Supplier Device Package: PG-LQFP-64-4
Part Status: Obsolete
Number of I/O: 47
DigiKey Programmable: Not Verified
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SAF-XC164TM-16F40F BA XC164TM.pdf
SAF-XC164TM-16F40F BA
Виробник: Infineon Technologies
Description: IC MCU 16BIT 128KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 14x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 2.35V ~ 2.7V
Connectivity: SPI, UART/USART
Peripherals: PWM, WDT
Supplier Device Package: PG-LQFP-64-4
Part Status: Obsolete
Number of I/O: 47
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 960 шт
В кошику  од. на суму  грн.
BSO040N03MSGXUMA1 infineon-bso040n03ms-g-datasheet-en.pdf
BSO040N03MSGXUMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 16A 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-DSO-8
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 15 V
на замовлення 337 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
3+153.61 грн
10+94.78 грн
50+71.55 грн
100+60.13 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
IR25604SPBF-INF IRSDS13486-1.pdf?t.download=true&u=5oefqw
IR25604SPBF-INF
Виробник: Infineon Technologies
Description: HIGH AND LOW SIDE DRIVER
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 150ns, 50ns
Channel Type: Independent
Driven Configuration: High-Side and Low-Side
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.9V
Current - Peak Output (Source, Sink): 200mA, 350mA
Part Status: Active
DigiKey Programmable: Not Verified
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IR25606SPBF-INF IRSDS19323-1.pdf?t.download=true&u=5oefqw
IR25606SPBF-INF
Виробник: Infineon Technologies
Description: HALF BRIDGE BASED PERIPHERAL DRI
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 150ns, 50ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.9V
Current - Peak Output (Source, Sink): 200mA, 350mA
Part Status: Active
DigiKey Programmable: Not Verified
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BC808-40WE6327 INFNS11647-1.pdf?t.download=true&u=5oefqw
BC808-40WE6327
Виробник: Infineon Technologies
Description: TRANS PNP 25V 0.5A PG-SOT23-3-11
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: PG-SOT23-3-11
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 250 mW
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
8955+2.26 грн
Мінімальне замовлення: 8955 шт
В кошику  од. на суму  грн.
BC808-40W INFNS11647-1.pdf?t.download=true&u=5oefqw
BC808-40W
Виробник: Infineon Technologies
Description: TRANS PNP 25V 0.5A SOT23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: PG-SOT23-3-11
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 250 mW
товару немає в наявності
Мінімальне замовлення: 6000 шт
В кошику  од. на суму  грн.
BC808-40E6327 INFNS11647-1.pdf?t.download=true&u=5oefqw
Виробник: Infineon Technologies
Description: TRANS PNP 25V 0.5A SOT23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: PG-SOT23-3-11
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 330 mW
товару немає в наявності
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BGSX24MU16E6327XUSA1 Infineon-BGSX24MU16-DataSheet-v02_01-EN.pdf?fileId=5546d4627448fb2b017468b01dad7214
BGSX24MU16E6327XUSA1
Виробник: Infineon Technologies
Description: IC RF SWITCH DP4T 5GHZ ULGA16-1
Packaging: Tape & Reel (TR)
Package / Case: 16-UFLGA Exposed Pad
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: DP4T
RF Type: GSM, LTE, W-CDMA
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.4V
Insertion Loss: 1dB
Frequency Range: 100MHz ~ 5GHz
Test Frequency: 5GHz
Isolation: 34dB
Supplier Device Package: PG-ULGA-16-1
IIP3: 77dBm
Part Status: Active
товару немає в наявності
Мінімальне замовлення: 4500 шт
В кошику  од. на суму  грн.
BSZ105N04NSG INFNS16243-1.pdf?t.download=true&u=5oefqw
BSZ105N04NSG
Виробник: Infineon Technologies
Description: OPTLMOS POWER-MOSFET
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 14µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 20 V
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IRLU3636-701TRP Part_Number_Guide_Web.pdf
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 50A IPAK
Packaging: Tube
товару немає в наявності
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BFP420H6433XTMA1 BFP420_Rev2013.pdf
BFP420H6433XTMA1
Виробник: Infineon Technologies
Description: RF TRANS NPN 5V 25GHZ PG-SOT-343
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 21dB
Power - Max: 160mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 4V
Frequency - Transition: 25GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1.8GHz
Supplier Device Package: PG-SOT343-3D
Part Status: Active
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BFP420H6433XTMA1 BFP420_Rev2013.pdf
BFP420H6433XTMA1
Виробник: Infineon Technologies
Description: RF TRANS NPN 5V 25GHZ PG-SOT-343
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 21dB
Power - Max: 160mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 4V
Frequency - Transition: 25GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1.8GHz
Supplier Device Package: PG-SOT343-3D
Part Status: Active
на замовлення 6287 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
10+31.67 грн
15+21.73 грн
25+19.43 грн
100+15.81 грн
250+14.65 грн
500+13.95 грн
1000+13.16 грн
2500+12.57 грн
5000+12.21 грн
Мінімальне замовлення: 10 шт
В кошику  од. на суму  грн.
TLE42712GATMA Infineon-TLE4271-2-DS-v02_70-EN.pdf?fileId=5546d46259d9a4bf0159f97a56393e6f
TLE42712GATMA
Виробник: Infineon Technologies
Description: IC REG LINEAR FIXED LDO REG
Packaging: Bulk
Package / Case: TO-220-7 Formed Leads
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 550mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: P-TO220-7-11
Voltage - Output (Min/Fixed): 5V
Control Features: Delay, Inhibit, Reset, Watchdog
Part Status: Active
PSRR: 54dB (100Hz)
Voltage Dropout (Max): 0.7V @ 550mA
Protection Features: Antisaturation, Over Temperature, Over Voltage, Reverse Polarity, Short Circuit
Current - Supply (Max): 90 mA
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IAUC24N10S5L300ATMA1 infineon-iauc24n10s5l300-datasheet-en.pdf
IAUC24N10S5L300ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 24A TDSON-8-33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 12A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 12µA
Supplier Device Package: PG-TDSON-8-33
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 50 V
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
5000+24.55 грн
Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.
FS75R07W2E3B11ABOMA1 Infineon-FS75R07W2E3_B11A-DS-v03_00-en_de.pdf?fileId=db3a3043345a30bc01345aebc79e0071
FS75R07W2E3B11ABOMA1
Виробник: Infineon Technologies
Description: IGBT MODULES
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: ACEPACK™ 2
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 95 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 275 W
Current - Collector Cutoff (Max): 50 µA
Input Capacitance (Cies) @ Vce: 4.6 nF @ 25 V
товару немає в наявності
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ICE3AR1080JGXUMA1 Infineon-ICE3AR1080JG-DS-v01_00-EN.pdf?fileId=5546d46253f6505701549aaf4c0d7510
ICE3AR1080JGXUMA1
Виробник: Infineon Technologies
Description: IC OFFLINE SWITCH FLYBACK 12DSO
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10.5V ~ 25V
Supplier Device Package: PG-DSO-12-19
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 17.3 V
Part Status: Active
Power (Watts): 62 W
на замовлення 17500 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2500+94.77 грн
5000+89.42 грн
Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
ICE3AR1080JGXUMA1 Infineon-ICE3AR1080JG-DS-v01_00-EN.pdf?fileId=5546d46253f6505701549aaf4c0d7510
ICE3AR1080JGXUMA1
Виробник: Infineon Technologies
Description: IC OFFLINE SWITCH FLYBACK 12DSO
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10.5V ~ 25V
Supplier Device Package: PG-DSO-12-19
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 17.3 V
Part Status: Active
Power (Watts): 62 W
на замовлення 21809 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2+181.32 грн
10+130.00 грн
25+118.88 грн
100+100.05 грн
250+94.56 грн
500+92.37 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
FS400R12A2T4BOSA1 fundamentals-of-power-semiconductors
FS400R12A2T4BOSA1
Виробник: Infineon Technologies
Description: IGBT MODULES
Packaging: Tray
товару немає в наявності
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
MB89133APFM-G-1019E1 ProductGuide_2008.1.pdf
Виробник: Infineon Technologies
Description: IC MCU 8BIT 8KB MROM 48QFP
Packaging: Tray
Package / Case: 48-QFP
Mounting Type: Surface Mount
Speed: 4.2MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: F²MC-8L
Data Converters: A/D 4x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.2V ~ 6V
Connectivity: Serial I/O
Peripherals: POR, WDT
Supplier Device Package: 48-QFP (10x10)
Part Status: Obsolete
Number of I/O: 24
DigiKey Programmable: Not Verified
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MB89538APMC-G-1019-JNE1 ProductGuide_2008.1.pdf
MB89538APMC-G-1019-JNE1
Виробник: Infineon Technologies
Description: IC MCU 8BIT 48KB MROM 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 12.5MHz
Program Memory Size: 48KB (48K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: F²MC-8L
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.2V ~ 5.5V
Connectivity: I²C, Serial I/O, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 64-LQFP (12x12)
Part Status: Obsolete
Number of I/O: 38
DigiKey Programmable: Not Verified
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IRFH8330TRPBF irfh8330pbf.pdf?fileId=5546d462533600a40153561fc2dc1f1f
IRFH8330TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 17A/56A PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 56A (Tc)
Rds On (Max) @ Id, Vgs: 6.6mOhm @ 20A, 10V
Power Dissipation (Max): 3.3W (Ta), 35W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V
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BC857BWE6327 INFNS16508-1.pdf?t.download=true&u=5oefqw
BC857BWE6327
Виробник: Infineon Technologies
Description: TRANS PNP 45V 0.1A PG-SOT323
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT323
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 250 mW
на замовлення 333000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
8955+2.33 грн
Мінімальне замовлення: 8955 шт
В кошику  од. на суму  грн.
BC857BWH6327 INFNS16508-1.pdf?t.download=true&u=5oefqw
BC857BWH6327
Виробник: Infineon Technologies
Description: TRANS PNP 45V 0.1A SOT323-3
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT323-3-1
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 250 mW
на замовлення 57000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
6512+3.61 грн
Мінімальне замовлення: 6512 шт
В кошику  од. на суму  грн.
IR2154 IR2154.pdf
IR2154
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 15.6V
Input Type: RC Input Circuit
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 80ns, 45ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Part Status: Obsolete
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 50 шт
В кошику  од. на суму  грн.
IR2154S IR2154.pdf
IR2154S
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 15.6V
Input Type: RC Input Circuit
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 80ns, 45ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Part Status: Obsolete
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 95 шт
В кошику  од. на суму  грн.
IPB120N06S4H1ATMA2 Infineon-I120N06S4_H1-DS-v01_00-en.pdf?fileId=db3a30431ff988150120388c9cf60caf
IPB120N06S4H1ATMA2
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 120A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 200µA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 21900 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
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TDA5255
Виробник: Infineon Technologies
Description: ASK/FSK 434 MHZ WIRELESS TRANSVR
Packaging: Bulk
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Sensitivity: -109dBm
Mounting Type: Surface Mount
Frequency: 434MHz
Type: TxRx Only
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.1V ~ 5.5V
Power - Output: 13dBm
Current - Receiving: 8.6mA ~ 9.5mA
Data Rate (Max): 100kbps
Current - Transmitting: 5.2mA ~ 17.4mA
Supplier Device Package: PG-TSSOP-38
Modulation: ASK, FSK
RF Family/Standard: General ISM < 1GHz
Serial Interfaces: I²C, SPI
Part Status: Active
DigiKey Programmable: Not Verified
товару немає в наявності
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S26KL512SDABHB020 infineon-512mb-64mb256mb-32mb128mb-16mb1-8v-3-datasheet-cn.pdf
S26KL512SDABHB020
Виробник: Infineon Technologies
Description: IC FLASH 512MBIT HYPERBUS 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 100 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Grade: Automotive
Part Status: Active
Memory Interface: HyperBus
Access Time: 96 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
на замовлення 1352 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+2769.71 грн
10+2467.89 грн
25+2389.01 грн
50+2186.51 грн
100+2131.73 грн
В кошику  од. на суму  грн.
CY14B104NA-ZS45XE download
CY14B104NA-ZS45XE
Виробник: Infineon Technologies
Description: IC NVSRAM 4MBIT PAR 44TSOP II
Packaging: Tray
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 3V ~ 3.63V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
на замовлення 2553 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+1182.95 грн
В кошику  од. на суму  грн.
CY14B104NA-BA20XI download
CY14B104NA-BA20XI
Виробник: Infineon Technologies
Description: IC NVSRAM 4MBIT PARALLEL 48FBGA
Packaging: Tray
Package / Case: 48-TFBGA
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 48-FBGA (6x10)
Write Cycle Time - Word, Page: 20ns
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 598 шт
В кошику  од. на суму  грн.
CY14B104NA-BA45XET download
CY14B104NA-BA45XET
Виробник: Infineon Technologies
Description: IC NVSRAM 4MBIT PARALLEL 48FBGA
Packaging: Tape & Reel (TR)
Package / Case: 48-TFBGA
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 48-FBGA (6x10)
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику  од. на суму  грн.
CY14B104NA-ZS25XET download
CY14B104NA-ZS25XET
Виробник: Infineon Technologies
Description: IC NVSRAM 4MBIT PAR 44TSOP II
Packaging: Tape & Reel (TR)
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Access Time: 25 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
CY14B104NA-ZS45XE download
CY14B104NA-ZS45XE
Виробник: Infineon Technologies
Description: IC NVSRAM 4MBIT PAR 44TSOP II
Packaging: Tray
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 3V ~ 3.63V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 135 шт
В кошику  од. на суму  грн.
CY14B104NA-ZS25XE download
CY14B104NA-ZS25XE
Виробник: Infineon Technologies
Description: IC NVSRAM 4MBIT PAR 44TSOP II
Packaging: Tray
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Access Time: 25 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 270 шт
В кошику  од. на суму  грн.
DF23MR12W1M1PB11BPSA1 Infineon-DF23MR12W1M1P_B11-DataSheet-v02_00-EN.pdf?fileId=5546d462712ef9b7017153f0de295eb5
DF23MR12W1M1PB11BPSA1
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 1200V 25A AG-EASY1B
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 25A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 1840pF @ 800V
Rds On (Max) @ Id, Vgs: 45mOhm @ 25A, 15V
Gate Charge (Qg) (Max) @ Vgs: 62nC @ 15V
Vgs(th) (Max) @ Id: 5.55V @ 10mA
Supplier Device Package: AG-EASY1B-2
Part Status: Obsolete
на замовлення 24 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+6035.08 грн
В кошику  од. на суму  грн.
SIPC03S2N03LX3MA1
Виробник: Infineon Technologies
Description: LV POWER MOS
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.
BSB012N03LX3 G BSB012N03LX3G.pdf
BSB012N03LX3 G
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 39A/180A 2WDSON
Packaging: Tape & Reel (TR)
Package / Case: 3-WDSON
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 30A, 10V
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: MG-WDSON-2, CanPAK M™
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 169 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16900 pF @ 15 V
товару немає в наявності
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T830N12TOFXPSA1 T830N.pdf
T830N12TOFXPSA1
Виробник: Infineon Technologies
Description: SCR MODULE 1.8KV 1500A DO-200AB
Packaging: Tray
Package / Case: DO-200AB, B-PUK
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 14500A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 844 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (RMS)) (Max): 1500 A
Voltage - Off State: 1.8 kV
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2+8231.53 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IRFR1018EPBF-INF
Виробник: Infineon Technologies
Description: HEXFET POWER MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 47A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: D-PAK (TO-252AA)
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2290 pF @ 50 V
товару немає в наявності
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CY2304NZZXC-1 Infineon-CY2304NZ_Four_Output_PCI-X_and_General_Purpose_Buffer-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebcd7a92ea3&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY2304NZZXC-1
Виробник: Infineon Technologies
Description: IC ZD BUFFER PCIE 8-TSSOP
Packaging: Tube
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 140MHz
Input: LVCMOS, LVTTL
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Main Purpose: PCI Express (PCIe)
Ratio - Input:Output: 1:4
Differential - Input:Output: No/No
Supplier Device Package: 8-TSSOP
PLL: No
Number of Circuits: 1
DigiKey Programmable: Not Verified
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2+174.99 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
BTS409L1CHIPX2LA1
BTS409L1CHIPX2LA1
Виробник: Infineon Technologies
Description: AUTOMOTIVE HIGH SIDE SWITCH
Packaging: Bulk
Part Status: Active
товару немає в наявності
В кошику  од. на суму  грн.
TLE4473GV53AUMA2 infineon-tle4473g-v53-datasheet-en.pdf
TLE4473GV53AUMA2
Виробник: Infineon Technologies
Description: IC REG LINEAR 3.3V/5V DSO12-6
Packaging: Tape & Reel (TR)
Package / Case: 12-BSOP (0.295", 7.50mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA, 180mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 265 µA
Voltage - Input (Max): 42V
Number of Regulators: 2
Supplier Device Package: P-DSO-12-6
Voltage - Output (Min/Fixed): 3.3V, 5V
Control Features: Inhibit, Reset, Watchdog
Grade: Automotive
Part Status: Active
PSRR: 65dB (100Hz), 65dB (100Hz)
Voltage Dropout (Max): -, 0.6V @ 100mA
Protection Features: Over Current, Over Temperature, Short Circuit, Transient Voltage
Current - Supply (Max): 20 mA
Qualification: AEC-Q100
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1000+130.42 грн
2000+122.55 грн
3000+121.03 грн
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
TLE4473GV53AUMA2 infineon-tle4473g-v53-datasheet-en.pdf
TLE4473GV53AUMA2
Виробник: Infineon Technologies
Description: IC REG LINEAR 3.3V/5V DSO12-6
Packaging: Cut Tape (CT)
Package / Case: 12-BSOP (0.295", 7.50mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA, 180mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 265 µA
Voltage - Input (Max): 42V
Number of Regulators: 2
Supplier Device Package: P-DSO-12-6
Voltage - Output (Min/Fixed): 3.3V, 5V
Control Features: Inhibit, Reset, Watchdog
Grade: Automotive
Part Status: Active
PSRR: 65dB (100Hz), 65dB (100Hz)
Voltage Dropout (Max): -, 0.6V @ 100mA
Protection Features: Over Current, Over Temperature, Short Circuit, Transient Voltage
Current - Supply (Max): 20 mA
Qualification: AEC-Q100
на замовлення 4938 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2+236.75 грн
10+171.02 грн
25+156.86 грн
100+132.54 грн
250+125.55 грн
500+123.88 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
TLE92623QXXUMA1 fundamentals-of-power-semiconductors
TLE92623QXXUMA1
Виробник: Infineon Technologies
Description: IC INTERFACE SPECIALIZED 48VQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: SPI
Supplier Device Package: PG-VQFN-48-31
Grade: Automotive
Part Status: Not For New Designs
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
IRFR3709ZTRLPBF irfr3709zpbf.pdf?fileId=5546d462533600a401535631a47a20c5
IRFR3709ZTRLPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 86A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 15A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2.25V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2330 pF @ 15 V
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BTN7960BAUMA1 fundamentals-of-power-semiconductors
BTN7960BAUMA1
Виробник: Infineon Technologies
Description: IC MOTOR DRIVER 8V-18V TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 47A
Interface: On/Off
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 8V ~ 18V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 8V ~ 18V
Supplier Device Package: PG-TO263-7-1
Motor Type - AC, DC: Brushed DC
товару немає в наявності
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BTS282ZDELCO INFNS13361-1.pdf?t.download=true&u=5oefqw
BTS282ZDELCO
Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-7 Formed Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 36A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 2V @ 240µA
Supplier Device Package: P-TO220-7-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 49 V
Gate Charge (Qg) (Max) @ Vgs: 232 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
товару немає в наявності
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IRFS7430TRLPBF infineon-irfs7430-datasheet-en.pdf
IRFS7430TRLPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 195A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 460 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14240 pF @ 25 V
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
800+111.94 грн
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
IRFS7430TRLPBF infineon-irfs7430-datasheet-en.pdf
IRFS7430TRLPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 195A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 460 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14240 pF @ 25 V
на замовлення 926 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2+309.59 грн
10+195.88 грн
50+152.13 грн
100+129.54 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IPB65R660CFDAATMA1 INFN-S-A0003823031-1.pdf?t.download=true&u=5oefqw
IPB65R660CFDAATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 6A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 660mOhm @ 3.2A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 200µA
Supplier Device Package: PG-TO263-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 543 pF @ 100 V
Qualification: AEC-Q101
на замовлення 4006 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2+192.41 грн
10+119.40 грн
100+81.84 грн
500+61.74 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IPB65R660CFDATMA1 IPx65R660CFD.pdf
IPB65R660CFDATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 6A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 660mOhm @ 2.1A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 200µA
Supplier Device Package: PG-TO263-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 615 pF @ 100 V
на замовлення 97 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
3+124.31 грн
10+107.74 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
BAS1602VH6327XTSA1 bas16series.pdf?folderId=db3a30431400ef6801141b5844e103ea&fileId=db3a30431400ef6801141b93811b03ff
BAS1602VH6327XTSA1
Виробник: Infineon Technologies
Description: DIODE STANDARD 80V 200MA PGSC792
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: PG-SC79-2
Operating Temperature - Junction: 150°C (Max)
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
на замовлення 1560 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
50+6.33 грн
86+3.58 грн
105+2.93 грн
Мінімальне замовлення: 50 шт
В кошику  од. на суму  грн.
BAS7002VH6327XTSA1 INFNS30154-1.pdf?t.download=true&u=5oefqw
BAS7002VH6327XTSA1
Виробник: Infineon Technologies
Description: DIODE SCHOTTKY 70V 70MA PGSC7921
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 100 ps
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 70mA
Supplier Device Package: PG-SC79-2-1
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Qualification: AEC-Q101
на замовлення 28988 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
13+26.13 грн
21+15.17 грн
50+10.93 грн
100+8.95 грн
500+6.64 грн
Мінімальне замовлення: 13 шт
В кошику  од. на суму  грн.
BAT6202VH6327XTSA1 Infineon-BAT62-02V-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7e7124d1017eb4959b1821f7
BAT6202VH6327XTSA1
Виробник: Infineon Technologies
Description: DIODE SCHOTTKY 40V 20MA PGSC7921
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 0.6pF @ 0V, 1MHz
Current - Average Rectified (Io): 20mA
Supplier Device Package: PG-SC79-2-1
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 mA
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
товару немає в наявності
В кошику  од. на суму  грн.