Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (149788) > Сторінка 370 з 2497
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BC817-16B5003 | Infineon Technologies |
Description: TRANS NPN 45V 0.5A PG-SOT23-3-11Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V Frequency - Transition: 170MHz Supplier Device Package: PG-SOT23-3-11 Part Status: Active Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 500 mW |
на замовлення 30000 шт: термін постачання 21-31 дні (днів) |
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SAF-XE162FM-48F80L AA | Infineon Technologies |
Description: IC MCU 16BIT 384KB FLASH 64LQFPPackaging: Tape & Reel (TR) Package / Case: 64-LQFP Mounting Type: Surface Mount Speed: 80MHz Program Memory Size: 384KB (384K x 8) RAM Size: 34K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: C166SV2 Data Converters: A/D 9x10b Core Size: 16-Bit Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI Peripherals: I2S, POR, PWM, WDT Supplier Device Package: PG-LQFP-64-13 Part Status: Obsolete Number of I/O: 40 DigiKey Programmable: Not Verified |
товару немає в наявності |
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| IM240M6Y1BAKSA1 | Infineon Technologies |
Description: MODULE IPM 3PHASE 23DIPPackaging: Tube Package / Case: 23-DIP Module (0.573", 14.55mm) Mounting Type: Through Hole Type: IGBT Configuration: 3 Phase Inverter Voltage - Isolation: 1900Vrms Current: 4 A Voltage: 600 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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IPG20N06S2L65ATMA1 | Infineon Technologies |
Description: MOSFET 2N-CH 55V 20A 8TDSONPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 43W Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 20A Input Capacitance (Ciss) (Max) @ Vds: 410pF @ 25V Rds On (Max) @ Id, Vgs: 65mOhm @ 15A, 10V Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2V @ 14µA Supplier Device Package: PG-TDSON-8-4 Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
на замовлення 20000 шт: термін постачання 21-31 дні (днів) |
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IPG20N06S2L65ATMA1 | Infineon Technologies |
Description: MOSFET 2N-CH 55V 20A 8TDSONPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 43W Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 20A Input Capacitance (Ciss) (Max) @ Vds: 410pF @ 25V Rds On (Max) @ Id, Vgs: 65mOhm @ 15A, 10V Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2V @ 14µA Supplier Device Package: PG-TDSON-8-4 Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
на замовлення 26421 шт: термін постачання 21-31 дні (днів) |
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TLI493DA2B6HTSA1 | Infineon Technologies |
Description: MAGNETIC SWITCH PROG TSOP-6-6-8Packaging: Tape & Reel (TR) Features: Temperature Compensated Package / Case: SOT-23-6 Thin, TSOT-23-6 Output Type: Open Drain Polarization: South Pole Mounting Type: Surface Mount Function: Programmable Operating Temperature: -40°C ~ 105°C (TJ) Voltage - Supply: 2.8V ~ 3.5V Technology: Hall Effect Current - Supply (Max): 5mA Supplier Device Package: PG-TSOP6-6-8 |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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TLI493DA2B6HTSA1 | Infineon Technologies |
Description: MAGNETIC SWITCH PROG TSOP-6-6-8Packaging: Cut Tape (CT) Features: Temperature Compensated Package / Case: SOT-23-6 Thin, TSOT-23-6 Output Type: Open Drain Polarization: South Pole Mounting Type: Surface Mount Function: Programmable Operating Temperature: -40°C ~ 105°C (TJ) Voltage - Supply: 2.8V ~ 3.5V Technology: Hall Effect Current - Supply (Max): 5mA Supplier Device Package: PG-TSOP6-6-8 |
на замовлення 10912 шт: термін постачання 21-31 дні (днів) |
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BCR183S | Infineon Technologies |
Description: TRANS PREBIAS 2PNP 50V SOT363Packaging: Bulk Package / Case: 6-VSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 250mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Frequency - Transition: 200MHz Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 10kOhms Supplier Device Package: PG-SOT363-PO Part Status: Active |
на замовлення 101966 шт: термін постачання 21-31 дні (днів) |
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| FF400R12KE3S5HOSA1 | Infineon Technologies |
Description: IGBT MODULEPackaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Half Bridge Inverter Operating Temperature: -40°C ~ 125°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 400A NTC Thermistor: No Supplier Device Package: AG-62MM Part Status: Active Current - Collector (Ic) (Max): 580 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 2000 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 28 nF @ 25 V |
на замовлення 57 шт: термін постачання 21-31 дні (днів) |
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| IPI60R199CP | Infineon Technologies |
Description: COOLMOS N-CHANNEL POWER MOSFET Packaging: Bulk Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| BAT68E6359HTMA1 | Infineon Technologies |
Description: RF MIXER/DETECTOR SCHOTTKY DIODEPackaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Diode Type: Schottky - Single Operating Temperature: 150°C (TJ) Capacitance @ Vr, F: 1pF @ 0V, 1MHz Resistance @ If, F: 10Ohm @ 5mA, 10kHz Voltage - Peak Reverse (Max): 8V Supplier Device Package: PG-SOT23-3-1 Part Status: Active Current - Max: 130 mA Power Dissipation (Max): 150 mW |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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BAT68-06E6327 | Infineon Technologies |
Description: RF MIXER/DETECTOR SCHOTTKY DIODEPackaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Diode Type: Schottky - 1 Pair Common Anode Operating Temperature: 150°C (TJ) Capacitance @ Vr, F: 1pF @ 0V, 1MHz Resistance @ If, F: 10Ohm @ 5mA, 10kHz Voltage - Peak Reverse (Max): 8V Supplier Device Package: PG-SOT23-3-1 Part Status: Active Current - Max: 130 mA Power Dissipation (Max): 150 mW |
на замовлення 147000 шт: термін постачання 21-31 дні (днів) |
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AUIRF6215STRL | Infineon Technologies |
Description: MOSFET P-CH 150V 13A D2PAKPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Rds On (Max) @ Id, Vgs: 290mOhm @ 6.6A, 10V Power Dissipation (Max): 3.8W (Ta), 110W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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ISS17EP06LMXTSA1 | Infineon Technologies |
Description: MOSFET P-CH 60V 300MA SOT23-3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 300mA (Ta) Rds On (Max) @ Id, Vgs: 1.7Ohm @ 300mA, 10V Power Dissipation (Max): 360mW (Ta) Vgs(th) (Max) @ Id: 2V @ 34µA Supplier Device Package: PG-SOT23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 1.79 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 55 pF @ 30 V |
на замовлення 47400 шт: термін постачання 21-31 дні (днів) |
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BTS50201EKAXUMA1 | Infineon Technologies |
Description: IC PWR SWITCH N-CHAN 1:1 DSO-14Packaging: Tape & Reel (TR) Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: High Side Rds On (Typ): 20mOhm Input Type: Non-Inverting Voltage - Load: 5V ~ 28V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 6.5A Ratio - Input:Output: 1:1 Supplier Device Package: PG-DSO-14-47-EP Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BTS50201EKAXUMA1 | Infineon Technologies |
Description: IC PWR SWITCH N-CHAN 1:1 DSO-14Packaging: Cut Tape (CT) Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: High Side Rds On (Typ): 20mOhm Input Type: Non-Inverting Voltage - Load: 5V ~ 28V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 6.5A Ratio - Input:Output: 1:1 Supplier Device Package: PG-DSO-14-47-EP Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature Part Status: Active |
на замовлення 2162 шт: термін постачання 21-31 дні (днів) |
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TC275T64F200NDCKXUMA1 | Infineon Technologies |
Description: IC MCU 32BIT 4MB FLASH 176LQFPPackaging: Tape & Reel (TR) Package / Case: 176-LQFP Exposed Pad Mounting Type: Surface Mount Speed: 200MHz Program Memory Size: 4MB (4M x 8) RAM Size: 472K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: External Program Memory Type: FLASH EEPROM Size: 64K x 8 Core Processor: TriCore™ Data Converters: A/D 40x12b, 6 x Sigma-Delta Core Size: 32-Bit Tri-Core Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT Peripherals: DMA, WDT Supplier Device Package: PG-LQFP-176-22 Part Status: Active Number of I/O: 112 DigiKey Programmable: Not Verified |
на замовлення 500 шт: термін постачання 21-31 дні (днів) |
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TC275T64F200NDCKXUMA1 | Infineon Technologies |
Description: IC MCU 32BIT 4MB FLASH 176LQFPPackaging: Cut Tape (CT) Package / Case: 176-LQFP Exposed Pad Mounting Type: Surface Mount Speed: 200MHz Program Memory Size: 4MB (4M x 8) RAM Size: 472K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: External Program Memory Type: FLASH EEPROM Size: 64K x 8 Core Processor: TriCore™ Data Converters: A/D 40x12b, 6 x Sigma-Delta Core Size: 32-Bit Tri-Core Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT Peripherals: DMA, WDT Supplier Device Package: PG-LQFP-176-22 Part Status: Active Number of I/O: 112 DigiKey Programmable: Not Verified |
на замовлення 823 шт: термін постачання 21-31 дні (днів) |
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TC277T64F200NDCKXUMA1 | Infineon Technologies |
Description: IC MCU 32BIT 4MB FLASH 292LFBGA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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TC277T64F200SDCLXUMA1 | Infineon Technologies |
Description: IC MCU 32BIT 4MB FLASH 292LFBGAPackaging: Tape & Reel (TR) Package / Case: 292-LFBGA Mounting Type: Surface Mount Speed: 200MHz Program Memory Size: 4MB (4M x 8) RAM Size: 472K x 8 Operating Temperature: -40°C ~ 150°C (TA) Oscillator Type: External Program Memory Type: FLASH EEPROM Size: 64K x 8 Core Processor: TriCore™ Data Converters: A/D 60x12b, 6 x Sigma-Delta Core Size: 32-Bit Tri-Core Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I²C, LINbus, MSC, PSI5, QSPI, SENT Peripherals: DMA, WDT Supplier Device Package: PG-LFBGA-292-6 Part Status: Discontinued at Digi-Key Number of I/O: 169 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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ICE3GS03LJGXUMA1 | Infineon Technologies |
Description: IC OFFLINE SWITCH FLYBACK 8DSO |
на замовлення 30000 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
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ICE3B0365 | Infineon Technologies |
Description: OFF-LINE SMPS CURRENT MODE CONTRPackaging: Bulk Part Status: Active DigiKey Programmable: Not Verified |
на замовлення 8357 шт: термін постачання 21-31 дні (днів) |
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BCR185WE6327 | Infineon Technologies |
Description: TRANS PREBIAS PNP 50V SOT323-3Packaging: Bulk Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Supplier Device Package: PG-SOT323-3-1 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 250 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 47 kOhms Grade: Automotive Qualification: AEC-Q101 Resistors Included: R1 and R2 |
на замовлення 375000 шт: термін постачання 21-31 дні (днів) |
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BCR183WE6327 | Infineon Technologies |
Description: BIPOLAR DIGITAL TRANSISTOR |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BCR185E6327 | Infineon Technologies |
Description: BIPOLAR DIGITAL TRANSISTORPackaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Supplier Device Package: PG-SOT23-3-1 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 47 kOhms |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BCR183WH6327 | Infineon Technologies |
Description: BIPOLAR DIGITAL TRANSISTORPackaging: Bulk Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Supplier Device Package: PG-SOT323-3-1 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 250 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms |
на замовлення 33000 шт: термін постачання 21-31 дні (днів) |
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BCR185WH6327 | Infineon Technologies |
Description: TRANS PREBIAS PNP 50V SOT323-3Packaging: Bulk Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Supplier Device Package: PG-SOT323-3-1 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 250 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 47 kOhms |
на замовлення 45301 шт: термін постачання 21-31 дні (днів) |
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BSZ031NE2LS5ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 25V 19A/40A TSDSONPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 40A (Tc) Rds On (Max) @ Id, Vgs: 3.1mOhm @ 20A, 10V Power Dissipation (Max): 2.1W (Ta), 30W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PG-TSDSON-8-FL Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 18.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 12 V |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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BSZ031NE2LS5ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 25V 19A/40A TSDSONPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 40A (Tc) Rds On (Max) @ Id, Vgs: 3.1mOhm @ 20A, 10V Power Dissipation (Max): 2.1W (Ta), 30W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PG-TSDSON-8-FL Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 18.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 12 V |
на замовлення 5687 шт: термін постачання 21-31 дні (днів) |
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PSB21483FV1.6 | Infineon Technologies | Description: INCA-S CODEC |
на замовлення 45 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
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FF225R12MS4BOSA1 | Infineon Technologies |
Description: IGBT MOD 1200V 275A 1450W MODPackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: 2 Independent Operating Temperature: -40°C ~ 125°C Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 225A NTC Thermistor: Yes Supplier Device Package: Module Current - Collector (Ic) (Max): 275 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 1450 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 15 nF @ 25 V |
на замовлення 6 шт: термін постачання 21-31 дні (днів) |
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PZTA14H6327XTSA1 | Infineon Technologies |
Description: TRANS NPN DARL 30V 0.3A SOT223-4Packaging: Bulk Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: NPN - Darlington Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V Frequency - Transition: 125MHz Supplier Device Package: PG-SOT223-4 Current - Collector (Ic) (Max): 300 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 1.5 W |
на замовлення 165000 шт: термін постачання 21-31 дні (днів) |
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CY8C4127FNI-BL483T | Infineon Technologies |
Description: IC RF TXRX+MCU BLE 68WLCSPPackaging: Cut Tape (CT) Package / Case: 68-UFBGA, WLCSP Sensitivity: -92dBm Mounting Type: Surface Mount Frequency: 2.4GHz Memory Size: 128kB Flash, 16kB SRAM Type: TxRx + MCU Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.8V ~ 5.5V Power - Output: 3dBm Protocol: Bluetooth v4.2 Current - Receiving: 16.4mA ~ 18.7mA Data Rate (Max): 1Mbps Current - Transmitting: 16.5mA ~ 20mA Supplier Device Package: 68-WLCSP (3.52x3.91) GPIO: 36 Modulation: GFSK RF Family/Standard: Bluetooth, General ISM > 1GHz Serial Interfaces: I2C, SPI, UART Part Status: Active DigiKey Programmable: Not Verified |
на замовлення 1137 шт: термін постачання 21-31 дні (днів) |
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CY8C4127FNI-BL483T | Infineon Technologies |
Description: IC RF TXRX+MCU BLE 68WLCSPPackaging: Tape & Reel (TR) Package / Case: 68-UFBGA, WLCSP Sensitivity: -92dBm Mounting Type: Surface Mount Frequency: 2.4GHz Memory Size: 128kB Flash, 16kB SRAM Type: TxRx + MCU Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.8V ~ 5.5V Power - Output: 3dBm Protocol: Bluetooth v4.2 Current - Receiving: 16.4mA ~ 18.7mA Data Rate (Max): 1Mbps Current - Transmitting: 16.5mA ~ 20mA Supplier Device Package: 68-WLCSP (3.52x3.91) GPIO: 36 Modulation: GFSK RF Family/Standard: Bluetooth, General ISM > 1GHz Serial Interfaces: I2C, SPI, UART Part Status: Active DigiKey Programmable: Not Verified |
товару немає в наявності |
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CY8C4127FNI-BL483T | Infineon Technologies |
Description: IC RF TXRX+MCU BLE 68WLCSPPackaging: Cut Tape (CT) Package / Case: 68-UFBGA, WLCSP Sensitivity: -92dBm Mounting Type: Surface Mount Frequency: 2.4GHz Memory Size: 128kB Flash, 16kB SRAM Type: TxRx + MCU Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.8V ~ 5.5V Power - Output: 3dBm Protocol: Bluetooth v4.2 Current - Receiving: 16.4mA ~ 18.7mA Data Rate (Max): 1Mbps Current - Transmitting: 16.5mA ~ 20mA Supplier Device Package: 68-WLCSP (3.52x3.91) GPIO: 36 Modulation: GFSK RF Family/Standard: Bluetooth, General ISM > 1GHz Serial Interfaces: I2C, SPI, UART Part Status: Active DigiKey Programmable: Not Verified |
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CY8C4248FLI-BL483T | Infineon Technologies |
Description: IC MCU 32BIT 256KB FLASH 76WLCSPPackaging: Tape & Reel (TR) Package / Case: 76-XFBGA, WLCSP Mounting Type: Surface Mount Speed: 48MHz Program Memory Size: 256KB (256K x 8) RAM Size: 32K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0 Data Converters: A/D 16x12b SAR; D/A 2xIDAC Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART Peripherals: Bluetooth, Brown-out Detect/Reset, Cap Sense, DMA LCD, LVD, POR, PWM, SmartCard, SmartSense, WDT Supplier Device Package: 76-WLCSP (4.04x3.87) Part Status: Obsolete Number of I/O: 36 DigiKey Programmable: Not Verified |
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CY8C4248FNI-BL483T | Infineon Technologies |
Description: IC MCU 32BIT 256KB FLASH 76WLCSPPackaging: Tape & Reel (TR) Package / Case: 76-UFBGA, WLCSP Mounting Type: Surface Mount Speed: 48MHz Program Memory Size: 256KB (256K x 8) RAM Size: 32K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0 Data Converters: A/D 16x12b SAR; D/A 2xIDAC Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Connectivity: I²C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART Peripherals: Bluetooth, Brown-out Detect/Reset, Cap Sense, DMA LCD, LVD, POR, PWM, SmartCard, SmartSense, WDT Supplier Device Package: 76-WLCSP (4.04×3.87) Part Status: Obsolete Number of I/O: 36 DigiKey Programmable: Not Verified |
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DEMOSENSE2GOLPULSETOBO1 | Infineon Technologies |
Description: SENSE2GOL PULSE BGT24LTR11 RADARPackaging: Bulk For Use With/Related Products: BGT24LTR11, XMC4700 Frequency: 24GHz Type: Transceiver; RADAR Supplied Contents: Board(s) Part Status: Active Sensitivity: 24GHz Sensor Type: Radar Utilized IC / Part: BGT24LTR11, XMC4700 Embedded: Yes, MCU, 32-Bit Sensing Range: 18m Contents: Board(s) |
на замовлення 44 шт: термін постачання 21-31 дні (днів) |
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KP214N2611XT | Infineon Technologies |
Description: SENSOR 16.68PSIA 4.65V DSOF8Packaging: Bulk Features: Amplified Output, Temperature Compensated Package / Case: 8-SMD Module Output Type: Analog Voltage Mounting Type: Surface Mount Output: 0.18V ~ 4.65V Operating Pressure: 2.18 ~ 16.68PSI (15 ~ 115kPa) Pressure Type: Absolute Accuracy: ±0.65PSI (4.50kPa) Operating Temperature: -40°C ~ 125°C (TA) Termination Style: SMD (SMT) Tab Voltage - Supply: 4.5V ~ 5.5V Applications: Board Mount Supplier Device Package: PG-DSOF-8-16 Port Style: No Port Part Status: Active |
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BTS612N1E3128ABUMA1 | Infineon Technologies |
Description: IC PWR SWITCH N-CHAN 1:1 TO263-7Packaging: Cut Tape (CT) Features: Auto Restart, Status Flag Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 2 Interface: Parallel Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: High Side Rds On (Typ): 160mOhm Input Type: Non-Inverting Voltage - Load: 5V ~ 34V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 3.5A Ratio - Input:Output: 1:1 Supplier Device Package: PG-TO263-7-2 Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, UVLO Part Status: Not For New Designs |
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BTN7970S | Infineon Technologies |
Description: HALF-BRIDGE PERIPHERAL DRIVERPackaging: Bulk Package / Case: TO-220-7 Formed Leads Mounting Type: Through Hole Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 90A Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Half Bridge Voltage - Supply: 8V ~ 18V Technology: DMOS Supplier Device Package: P-TO220-7-11 Motor Type - Stepper: Unipolar Part Status: Obsolete Grade: Automotive |
на замовлення 5755 шт: термін постачання 21-31 дні (днів) |
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TDA7110FHTMA1 | Infineon Technologies |
Description: RF TX IC ASK 433-435MHZ 10TFSOPPackaging: Tape & Reel (TR) Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width) Mounting Type: Surface Mount Frequency: 433MHz ~ 435MHz Modulation or Protocol: ASK, FSK Data Interface: PCB, Surface Mount Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2.1V ~ 4V Power - Output: 11dBm Applications: Remote Control, RKE, Security Systems Current - Transmitting: 21mA Antenna Connector: PCB, Surface Mount Supplier Device Package: PG-TSSOP-10-2 Part Status: Obsolete DigiKey Programmable: Not Verified |
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TDA7110FHTMA1 | Infineon Technologies |
Description: RF TX IC ASK 433-435MHZ 10TFSOPPackaging: Cut Tape (CT) Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width) Mounting Type: Surface Mount Frequency: 433MHz ~ 435MHz Modulation or Protocol: ASK, FSK Data Interface: PCB, Surface Mount Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2.1V ~ 4V Power - Output: 11dBm Applications: Remote Control, RKE, Security Systems Current - Transmitting: 21mA Antenna Connector: PCB, Surface Mount Supplier Device Package: PG-TSSOP-10-2 Part Status: Obsolete DigiKey Programmable: Not Verified |
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BSZ076N06NS3G | Infineon Technologies |
Description: OPTLMOS N-CHANNEL POWER MOSFETPackaging: Bulk Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 7.6mOhm @ 20A, 10V Power Dissipation (Max): 2.1W (Ta), 69W (Tc) Vgs(th) (Max) @ Id: 4V @ 35µA Supplier Device Package: PG-TSDSON-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 30 V |
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BSZ0702LSATMA1 | Infineon Technologies |
Description: MOSFET N-CH 60V 17A/40A TSDSONPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 40A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V Power Dissipation (Max): 2.1W (Ta), 69W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 36µA Supplier Device Package: PG-TDSON-8 FL Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 30 V |
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EVALPSIRS200XTOBO1 | Infineon Technologies |
Description: EVAL BOARD FOR PSIRS200XPackaging: Bulk Function: Motor Controller/Driver, Stepper Type: Power Management Utilized IC / Part: PSIRS200X Supplied Contents: Board(s) Part Status: Active Contents: Board(s) |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
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IRL6372TRPBF | Infineon Technologies |
Description: MOSFET 2N-CH 30V 8.1A 8SOPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8.1A Input Capacitance (Ciss) (Max) @ Vds: 1020pF @ 25V Rds On (Max) @ Id, Vgs: 17.9mOhm @ 8.1A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.1V @ 10µA Supplier Device Package: 8-SO Part Status: Active |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
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IRL6372TRPBF | Infineon Technologies |
Description: MOSFET 2N-CH 30V 8.1A 8SOPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8.1A Input Capacitance (Ciss) (Max) @ Vds: 1020pF @ 25V Rds On (Max) @ Id, Vgs: 17.9mOhm @ 8.1A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.1V @ 10µA Supplier Device Package: 8-SO Part Status: Active |
на замовлення 11036 шт: термін постачання 21-31 дні (днів) |
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IRL60SC216ARMA1 | Infineon Technologies |
Description: MOSFET N-CH 60V 324A TO263-7Packaging: Tape & Reel (TR) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 324A (Tc) Rds On (Max) @ Id, Vgs: 1.5mOhm @ 100A, 10V Power Dissipation (Max): 2.4W (Ta), 375W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: PG-TO263-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 218 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 16000 pF @ 30 V |
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IRL60SC216ARMA1 | Infineon Technologies |
Description: MOSFET N-CH 60V 324A TO263-7Packaging: Cut Tape (CT) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 324A (Tc) Rds On (Max) @ Id, Vgs: 1.5mOhm @ 100A, 10V Power Dissipation (Max): 2.4W (Ta), 375W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: PG-TO263-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 218 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 16000 pF @ 30 V |
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| PMB8870V1.1 | Infineon Technologies |
Description: S-GOLD GSM/E-GPRS BASEBAND ICPackaging: Bulk |
на замовлення 206000 шт: термін постачання 21-31 дні (днів) |
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| MB90553BPMC-G-329-JNE1 | Infineon Technologies |
Description: IC ANALOG Packaging: Bulk Part Status: Obsolete DigiKey Programmable: Not Verified |
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В кошику од. на суму грн. | |||||||||||||||||
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MB90553BPMC-G-353-JNE1 | Infineon Technologies |
Description: IC MCU 16BIT 128KB MROM 100LQFP Packaging: Bulk Package / Case: 100-LQFP Mounting Type: Surface Mount Speed: 16MHz Program Memory Size: 128KB (128K x 8) RAM Size: 4K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: External Program Memory Type: Mask ROM Core Processor: F²MC-16LX Data Converters: A/D 8x8/10b Core Size: 16-Bit Voltage - Supply (Vcc/Vdd): 3.5V ~ 5.5V Connectivity: I²C, SCI, UART/USART Peripherals: POR, WDT Supplier Device Package: 100-LQFP (14x14) Part Status: Obsolete Number of I/O: 83 DigiKey Programmable: Not Verified |
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MB90553BPMC-G-373E1 | Infineon Technologies |
Description: IC MCU 16BIT 128KB MROM 100LQFP Packaging: Bulk Package / Case: 100-LQFP Mounting Type: Surface Mount Speed: 16MHz Program Memory Size: 128KB (128K x 8) RAM Size: 4K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: External Program Memory Type: Mask ROM Core Processor: F²MC-16LX Data Converters: A/D 8x8/10b Core Size: 16-Bit Voltage - Supply (Vcc/Vdd): 3.5V ~ 5.5V Connectivity: I²C, SCI, UART/USART Peripherals: POR, WDT Supplier Device Package: 100-LQFP (14x14) Number of I/O: 83 DigiKey Programmable: Not Verified |
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IPT65R105G7XTMA1 | Infineon Technologies |
Description: MOSFET N-CH 650V 24A 8HSOFPackaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 105mOhm @ 8.9A, 10V Power Dissipation (Max): 156W (Tc) Vgs(th) (Max) @ Id: 4V @ 440µA Supplier Device Package: PG-HSOF-8-2 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 400 V |
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IPP530N15N3GXKSA1 | Infineon Technologies |
Description: MOSFET N-CH 150V 21A TO220-3 |
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BGSX22G2A10E6327XTSA1 | Infineon Technologies |
Description: IC RF SWITCH DPDT 6GHZ ATSLP10-2Packaging: Tape & Reel (TR) Package / Case: 10-UFQFN Impedance: 50Ohm Mounting Type: Surface Mount Circuit: DPDT RF Type: General Purpose Voltage - Supply: 2.3V ~ 3.4V Frequency Range: 100MHz ~ 6GHz Supplier Device Package: PG-ATSLP-10-2 |
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BTT61002ERAXUMA1 | Infineon Technologies |
Description: IC PWR SWITCH N-CHAN 1:1 TDSO-14Packaging: Tape & Reel (TR) Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 2 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: High Side Rds On (Typ): 100mOhm Input Type: Non-Inverting Voltage - Load: 5V ~ 36V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 2.2A Ratio - Input:Output: 1:1 Supplier Device Package: PG-TDSO-14-21 Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage Part Status: Active Grade: Automotive Qualification: AEC-Q100 |
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BTT60502ERAXUMA1 | Infineon Technologies |
Description: IC PWR SWITCH N-CHAN 1:1 TDSO-14Packaging: Tape & Reel (TR) Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 2 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: High Side Rds On (Typ): 50mOhm Input Type: Non-Inverting Voltage - Load: 5V ~ 36V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 3A Ratio - Input:Output: 1:1 Supplier Device Package: PG-TDSO-14-31 Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage Part Status: Active Grade: Automotive Qualification: AEC-Q100 |
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| AUIRFC8408TR | Infineon Technologies |
Description: MOSFET N-CH SMD D2PAK Packaging: Tape & Reel (TR) Part Status: Obsolete |
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В кошику од. на суму грн. |
| BC817-16B5003 |
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Виробник: Infineon Technologies
Description: TRANS NPN 45V 0.5A PG-SOT23-3-11
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 170MHz
Supplier Device Package: PG-SOT23-3-11
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 500 mW
Description: TRANS NPN 45V 0.5A PG-SOT23-3-11
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 170MHz
Supplier Device Package: PG-SOT23-3-11
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 500 mW
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10764+ | 2.18 грн |
| SAF-XE162FM-48F80L AA |
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Виробник: Infineon Technologies
Description: IC MCU 16BIT 384KB FLASH 64LQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 384KB (384K x 8)
RAM Size: 34K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 9x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-64-13
Part Status: Obsolete
Number of I/O: 40
DigiKey Programmable: Not Verified
Description: IC MCU 16BIT 384KB FLASH 64LQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 384KB (384K x 8)
RAM Size: 34K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 9x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-64-13
Part Status: Obsolete
Number of I/O: 40
DigiKey Programmable: Not Verified
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| IM240M6Y1BAKSA1 |
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Виробник: Infineon Technologies
Description: MODULE IPM 3PHASE 23DIP
Packaging: Tube
Package / Case: 23-DIP Module (0.573", 14.55mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 1900Vrms
Current: 4 A
Voltage: 600 V
Description: MODULE IPM 3PHASE 23DIP
Packaging: Tube
Package / Case: 23-DIP Module (0.573", 14.55mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 1900Vrms
Current: 4 A
Voltage: 600 V
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| IPG20N06S2L65ATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET 2N-CH 55V 20A 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 43W
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 410pF @ 25V
Rds On (Max) @ Id, Vgs: 65mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 14µA
Supplier Device Package: PG-TDSON-8-4
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N-CH 55V 20A 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 43W
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 410pF @ 25V
Rds On (Max) @ Id, Vgs: 65mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 14µA
Supplier Device Package: PG-TDSON-8-4
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5000+ | 27.25 грн |
| IPG20N06S2L65ATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET 2N-CH 55V 20A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 43W
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 410pF @ 25V
Rds On (Max) @ Id, Vgs: 65mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 14µA
Supplier Device Package: PG-TDSON-8-4
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N-CH 55V 20A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 43W
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 410pF @ 25V
Rds On (Max) @ Id, Vgs: 65mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 14µA
Supplier Device Package: PG-TDSON-8-4
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 26421 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 114.00 грн |
| 10+ | 69.29 грн |
| 100+ | 46.24 грн |
| 500+ | 34.09 грн |
| 1000+ | 31.10 грн |
| 2000+ | 30.14 грн |
| TLI493DA2B6HTSA1 |
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Виробник: Infineon Technologies
Description: MAGNETIC SWITCH PROG TSOP-6-6-8
Packaging: Tape & Reel (TR)
Features: Temperature Compensated
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: Open Drain
Polarization: South Pole
Mounting Type: Surface Mount
Function: Programmable
Operating Temperature: -40°C ~ 105°C (TJ)
Voltage - Supply: 2.8V ~ 3.5V
Technology: Hall Effect
Current - Supply (Max): 5mA
Supplier Device Package: PG-TSOP6-6-8
Description: MAGNETIC SWITCH PROG TSOP-6-6-8
Packaging: Tape & Reel (TR)
Features: Temperature Compensated
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: Open Drain
Polarization: South Pole
Mounting Type: Surface Mount
Function: Programmable
Operating Temperature: -40°C ~ 105°C (TJ)
Voltage - Supply: 2.8V ~ 3.5V
Technology: Hall Effect
Current - Supply (Max): 5mA
Supplier Device Package: PG-TSOP6-6-8
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 42.23 грн |
| 6000+ | 39.34 грн |
| 9000+ | 38.62 грн |
| TLI493DA2B6HTSA1 |
![]() |
Виробник: Infineon Technologies
Description: MAGNETIC SWITCH PROG TSOP-6-6-8
Packaging: Cut Tape (CT)
Features: Temperature Compensated
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: Open Drain
Polarization: South Pole
Mounting Type: Surface Mount
Function: Programmable
Operating Temperature: -40°C ~ 105°C (TJ)
Voltage - Supply: 2.8V ~ 3.5V
Technology: Hall Effect
Current - Supply (Max): 5mA
Supplier Device Package: PG-TSOP6-6-8
Description: MAGNETIC SWITCH PROG TSOP-6-6-8
Packaging: Cut Tape (CT)
Features: Temperature Compensated
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: Open Drain
Polarization: South Pole
Mounting Type: Surface Mount
Function: Programmable
Operating Temperature: -40°C ~ 105°C (TJ)
Voltage - Supply: 2.8V ~ 3.5V
Technology: Hall Effect
Current - Supply (Max): 5mA
Supplier Device Package: PG-TSOP6-6-8
на замовлення 10912 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 83.44 грн |
| 5+ | 71.12 грн |
| 10+ | 67.54 грн |
| 25+ | 59.42 грн |
| 50+ | 56.74 грн |
| 100+ | 54.29 грн |
| 500+ | 48.54 грн |
| 1000+ | 46.73 грн |
| BCR183S |
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Виробник: Infineon Technologies
Description: TRANS PREBIAS 2PNP 50V SOT363
Packaging: Bulk
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: PG-SOT363-PO
Part Status: Active
Description: TRANS PREBIAS 2PNP 50V SOT363
Packaging: Bulk
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: PG-SOT363-PO
Part Status: Active
на замовлення 101966 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8485+ | 2.82 грн |
| FF400R12KE3S5HOSA1 |
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Виробник: Infineon Technologies
Description: IGBT MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 400A
NTC Thermistor: No
Supplier Device Package: AG-62MM
Part Status: Active
Current - Collector (Ic) (Max): 580 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 2000 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 28 nF @ 25 V
Description: IGBT MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 400A
NTC Thermistor: No
Supplier Device Package: AG-62MM
Part Status: Active
Current - Collector (Ic) (Max): 580 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 2000 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 28 nF @ 25 V
на замовлення 57 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 12556.16 грн |
| IPI60R199CP |
Виробник: Infineon Technologies
Description: COOLMOS N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
Description: COOLMOS N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
| BAT68E6359HTMA1 |
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Виробник: Infineon Technologies
Description: RF MIXER/DETECTOR SCHOTTKY DIODE
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: Schottky - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 1pF @ 0V, 1MHz
Resistance @ If, F: 10Ohm @ 5mA, 10kHz
Voltage - Peak Reverse (Max): 8V
Supplier Device Package: PG-SOT23-3-1
Part Status: Active
Current - Max: 130 mA
Power Dissipation (Max): 150 mW
Description: RF MIXER/DETECTOR SCHOTTKY DIODE
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: Schottky - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 1pF @ 0V, 1MHz
Resistance @ If, F: 10Ohm @ 5mA, 10kHz
Voltage - Peak Reverse (Max): 8V
Supplier Device Package: PG-SOT23-3-1
Part Status: Active
Current - Max: 130 mA
Power Dissipation (Max): 150 mW
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4157+ | 5.78 грн |
| BAT68-06E6327 |
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Виробник: Infineon Technologies
Description: RF MIXER/DETECTOR SCHOTTKY DIODE
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: Schottky - 1 Pair Common Anode
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 1pF @ 0V, 1MHz
Resistance @ If, F: 10Ohm @ 5mA, 10kHz
Voltage - Peak Reverse (Max): 8V
Supplier Device Package: PG-SOT23-3-1
Part Status: Active
Current - Max: 130 mA
Power Dissipation (Max): 150 mW
Description: RF MIXER/DETECTOR SCHOTTKY DIODE
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: Schottky - 1 Pair Common Anode
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 1pF @ 0V, 1MHz
Resistance @ If, F: 10Ohm @ 5mA, 10kHz
Voltage - Peak Reverse (Max): 8V
Supplier Device Package: PG-SOT23-3-1
Part Status: Active
Current - Max: 130 mA
Power Dissipation (Max): 150 mW
на замовлення 147000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2308+ | 10.74 грн |
| AUIRF6215STRL |
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Виробник: Infineon Technologies
Description: MOSFET P-CH 150V 13A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 6.6A, 10V
Power Dissipation (Max): 3.8W (Ta), 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET P-CH 150V 13A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 6.6A, 10V
Power Dissipation (Max): 3.8W (Ta), 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| ISS17EP06LMXTSA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET P-CH 60V 300MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Rds On (Max) @ Id, Vgs: 1.7Ohm @ 300mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 34µA
Supplier Device Package: PG-SOT23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.79 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 55 pF @ 30 V
Description: MOSFET P-CH 60V 300MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Rds On (Max) @ Id, Vgs: 1.7Ohm @ 300mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 34µA
Supplier Device Package: PG-SOT23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.79 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 55 pF @ 30 V
на замовлення 47400 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 25.61 грн |
| 21+ | 15.27 грн |
| 100+ | 7.41 грн |
| 500+ | 6.58 грн |
| 1000+ | 5.87 грн |
| BTS50201EKAXUMA1 |
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Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 DSO-14
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 20mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 28V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 6.5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-14-47-EP
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature
Part Status: Active
Description: IC PWR SWITCH N-CHAN 1:1 DSO-14
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 20mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 28V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 6.5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-14-47-EP
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature
Part Status: Active
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од. на суму грн.
| BTS50201EKAXUMA1 |
![]() |
Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 DSO-14
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 20mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 28V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 6.5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-14-47-EP
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature
Part Status: Active
Description: IC PWR SWITCH N-CHAN 1:1 DSO-14
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 20mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 28V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 6.5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-14-47-EP
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature
Part Status: Active
на замовлення 2162 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 142.09 грн |
| 10+ | 101.35 грн |
| 25+ | 92.34 грн |
| 100+ | 77.36 грн |
| 250+ | 72.93 грн |
| 500+ | 70.26 грн |
| 1000+ | 66.94 грн |
| TC275T64F200NDCKXUMA1 |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 4MB FLASH 176LQFP
Packaging: Tape & Reel (TR)
Package / Case: 176-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 472K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: TriCore™
Data Converters: A/D 40x12b, 6 x Sigma-Delta
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, WDT
Supplier Device Package: PG-LQFP-176-22
Part Status: Active
Number of I/O: 112
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 4MB FLASH 176LQFP
Packaging: Tape & Reel (TR)
Package / Case: 176-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 472K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: TriCore™
Data Converters: A/D 40x12b, 6 x Sigma-Delta
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, WDT
Supplier Device Package: PG-LQFP-176-22
Part Status: Active
Number of I/O: 112
DigiKey Programmable: Not Verified
на замовлення 500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 500+ | 1579.75 грн |
| TC275T64F200NDCKXUMA1 |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 4MB FLASH 176LQFP
Packaging: Cut Tape (CT)
Package / Case: 176-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 472K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: TriCore™
Data Converters: A/D 40x12b, 6 x Sigma-Delta
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, WDT
Supplier Device Package: PG-LQFP-176-22
Part Status: Active
Number of I/O: 112
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 4MB FLASH 176LQFP
Packaging: Cut Tape (CT)
Package / Case: 176-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 472K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: TriCore™
Data Converters: A/D 40x12b, 6 x Sigma-Delta
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, WDT
Supplier Device Package: PG-LQFP-176-22
Part Status: Active
Number of I/O: 112
DigiKey Programmable: Not Verified
на замовлення 823 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 2361.79 грн |
| 10+ | 1839.74 грн |
| 25+ | 1731.35 грн |
| 100+ | 1513.02 грн |
| 250+ | 1459.73 грн |
| TC277T64F200NDCKXUMA1 |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 4MB FLASH 292LFBGA
Description: IC MCU 32BIT 4MB FLASH 292LFBGA
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| TC277T64F200SDCLXUMA1 |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 4MB FLASH 292LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 472K x 8
Operating Temperature: -40°C ~ 150°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: TriCore™
Data Converters: A/D 60x12b, 6 x Sigma-Delta
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I²C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, WDT
Supplier Device Package: PG-LFBGA-292-6
Part Status: Discontinued at Digi-Key
Number of I/O: 169
Description: IC MCU 32BIT 4MB FLASH 292LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 472K x 8
Operating Temperature: -40°C ~ 150°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: TriCore™
Data Converters: A/D 60x12b, 6 x Sigma-Delta
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I²C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, WDT
Supplier Device Package: PG-LFBGA-292-6
Part Status: Discontinued at Digi-Key
Number of I/O: 169
товару немає в наявності
В кошику
од. на суму грн.
| ICE3GS03LJGXUMA1 |
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Виробник: Infineon Technologies
Description: IC OFFLINE SWITCH FLYBACK 8DSO
Description: IC OFFLINE SWITCH FLYBACK 8DSO
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| ICE3B0365 |
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Виробник: Infineon Technologies
Description: OFF-LINE SMPS CURRENT MODE CONTR
Packaging: Bulk
Part Status: Active
DigiKey Programmable: Not Verified
Description: OFF-LINE SMPS CURRENT MODE CONTR
Packaging: Bulk
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 8357 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 487+ | 43.65 грн |
| BCR185WE6327 |
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Виробник: Infineon Technologies
Description: TRANS PREBIAS PNP 50V SOT323-3
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: PG-SOT323-3-1
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
Description: TRANS PREBIAS PNP 50V SOT323-3
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: PG-SOT323-3-1
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
на замовлення 375000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8955+ | 2.13 грн |
| BCR183WE6327 |
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Виробник: Infineon Technologies
Description: BIPOLAR DIGITAL TRANSISTOR
Description: BIPOLAR DIGITAL TRANSISTOR
товару немає в наявності
В кошику
од. на суму грн.
| BCR185E6327 |
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Виробник: Infineon Technologies
Description: BIPOLAR DIGITAL TRANSISTOR
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: PG-SOT23-3-1
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Description: BIPOLAR DIGITAL TRANSISTOR
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: PG-SOT23-3-1
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
товару немає в наявності
В кошику
од. на суму грн.
| BCR183WH6327 |
![]() |
Виробник: Infineon Technologies
Description: BIPOLAR DIGITAL TRANSISTOR
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: PG-SOT323-3-1
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Description: BIPOLAR DIGITAL TRANSISTOR
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: PG-SOT323-3-1
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
на замовлення 33000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 7123+ | 3.09 грн |
| BCR185WH6327 |
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Виробник: Infineon Technologies
Description: TRANS PREBIAS PNP 50V SOT323-3
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: PG-SOT323-3-1
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Description: TRANS PREBIAS PNP 50V SOT323-3
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: PG-SOT323-3-1
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
на замовлення 45301 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6571+ | 3.92 грн |
| BSZ031NE2LS5ATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 25V 19A/40A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 18.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 12 V
Description: MOSFET N-CH 25V 19A/40A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 18.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 12 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5000+ | 24.03 грн |
| BSZ031NE2LS5ATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 25V 19A/40A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 18.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 12 V
Description: MOSFET N-CH 25V 19A/40A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 18.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 12 V
на замовлення 5687 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 92.52 грн |
| 10+ | 53.62 грн |
| 100+ | 38.84 грн |
| 500+ | 29.72 грн |
| 1000+ | 27.05 грн |
| 2000+ | 25.57 грн |
| PSB21483FV1.6 |
Виробник: Infineon Technologies
Description: INCA-S CODEC
Description: INCA-S CODEC
на замовлення 45 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| FF225R12MS4BOSA1 |
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Виробник: Infineon Technologies
Description: IGBT MOD 1200V 275A 1450W MOD
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 225A
NTC Thermistor: Yes
Supplier Device Package: Module
Current - Collector (Ic) (Max): 275 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1450 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 15 nF @ 25 V
Description: IGBT MOD 1200V 275A 1450W MOD
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 225A
NTC Thermistor: Yes
Supplier Device Package: Module
Current - Collector (Ic) (Max): 275 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1450 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 15 nF @ 25 V
на замовлення 6 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 10877.95 грн |
| PZTA14H6327XTSA1 |
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Виробник: Infineon Technologies
Description: TRANS NPN DARL 30V 0.3A SOT223-4
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
Frequency - Transition: 125MHz
Supplier Device Package: PG-SOT223-4
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 1.5 W
Description: TRANS NPN DARL 30V 0.3A SOT223-4
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
Frequency - Transition: 125MHz
Supplier Device Package: PG-SOT223-4
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 1.5 W
на замовлення 165000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1176+ | 20.11 грн |
| CY8C4127FNI-BL483T |
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Виробник: Infineon Technologies
Description: IC RF TXRX+MCU BLE 68WLCSP
Packaging: Cut Tape (CT)
Package / Case: 68-UFBGA, WLCSP
Sensitivity: -92dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 128kB Flash, 16kB SRAM
Type: TxRx + MCU
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Power - Output: 3dBm
Protocol: Bluetooth v4.2
Current - Receiving: 16.4mA ~ 18.7mA
Data Rate (Max): 1Mbps
Current - Transmitting: 16.5mA ~ 20mA
Supplier Device Package: 68-WLCSP (3.52x3.91)
GPIO: 36
Modulation: GFSK
RF Family/Standard: Bluetooth, General ISM > 1GHz
Serial Interfaces: I2C, SPI, UART
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC RF TXRX+MCU BLE 68WLCSP
Packaging: Cut Tape (CT)
Package / Case: 68-UFBGA, WLCSP
Sensitivity: -92dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 128kB Flash, 16kB SRAM
Type: TxRx + MCU
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Power - Output: 3dBm
Protocol: Bluetooth v4.2
Current - Receiving: 16.4mA ~ 18.7mA
Data Rate (Max): 1Mbps
Current - Transmitting: 16.5mA ~ 20mA
Supplier Device Package: 68-WLCSP (3.52x3.91)
GPIO: 36
Modulation: GFSK
RF Family/Standard: Bluetooth, General ISM > 1GHz
Serial Interfaces: I2C, SPI, UART
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 1137 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 108.22 грн |
| CY8C4127FNI-BL483T |
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Виробник: Infineon Technologies
Description: IC RF TXRX+MCU BLE 68WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 68-UFBGA, WLCSP
Sensitivity: -92dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 128kB Flash, 16kB SRAM
Type: TxRx + MCU
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Power - Output: 3dBm
Protocol: Bluetooth v4.2
Current - Receiving: 16.4mA ~ 18.7mA
Data Rate (Max): 1Mbps
Current - Transmitting: 16.5mA ~ 20mA
Supplier Device Package: 68-WLCSP (3.52x3.91)
GPIO: 36
Modulation: GFSK
RF Family/Standard: Bluetooth, General ISM > 1GHz
Serial Interfaces: I2C, SPI, UART
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC RF TXRX+MCU BLE 68WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 68-UFBGA, WLCSP
Sensitivity: -92dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 128kB Flash, 16kB SRAM
Type: TxRx + MCU
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Power - Output: 3dBm
Protocol: Bluetooth v4.2
Current - Receiving: 16.4mA ~ 18.7mA
Data Rate (Max): 1Mbps
Current - Transmitting: 16.5mA ~ 20mA
Supplier Device Package: 68-WLCSP (3.52x3.91)
GPIO: 36
Modulation: GFSK
RF Family/Standard: Bluetooth, General ISM > 1GHz
Serial Interfaces: I2C, SPI, UART
Part Status: Active
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
| CY8C4127FNI-BL483T |
![]() |
Виробник: Infineon Technologies
Description: IC RF TXRX+MCU BLE 68WLCSP
Packaging: Cut Tape (CT)
Package / Case: 68-UFBGA, WLCSP
Sensitivity: -92dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 128kB Flash, 16kB SRAM
Type: TxRx + MCU
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Power - Output: 3dBm
Protocol: Bluetooth v4.2
Current - Receiving: 16.4mA ~ 18.7mA
Data Rate (Max): 1Mbps
Current - Transmitting: 16.5mA ~ 20mA
Supplier Device Package: 68-WLCSP (3.52x3.91)
GPIO: 36
Modulation: GFSK
RF Family/Standard: Bluetooth, General ISM > 1GHz
Serial Interfaces: I2C, SPI, UART
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC RF TXRX+MCU BLE 68WLCSP
Packaging: Cut Tape (CT)
Package / Case: 68-UFBGA, WLCSP
Sensitivity: -92dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 128kB Flash, 16kB SRAM
Type: TxRx + MCU
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Power - Output: 3dBm
Protocol: Bluetooth v4.2
Current - Receiving: 16.4mA ~ 18.7mA
Data Rate (Max): 1Mbps
Current - Transmitting: 16.5mA ~ 20mA
Supplier Device Package: 68-WLCSP (3.52x3.91)
GPIO: 36
Modulation: GFSK
RF Family/Standard: Bluetooth, General ISM > 1GHz
Serial Interfaces: I2C, SPI, UART
Part Status: Active
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
| CY8C4248FLI-BL483T |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 256KB FLASH 76WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 76-XFBGA, WLCSP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 16x12b SAR; D/A 2xIDAC
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Bluetooth, Brown-out Detect/Reset, Cap Sense, DMA LCD, LVD, POR, PWM, SmartCard, SmartSense, WDT
Supplier Device Package: 76-WLCSP (4.04x3.87)
Part Status: Obsolete
Number of I/O: 36
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 256KB FLASH 76WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 76-XFBGA, WLCSP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 16x12b SAR; D/A 2xIDAC
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Bluetooth, Brown-out Detect/Reset, Cap Sense, DMA LCD, LVD, POR, PWM, SmartCard, SmartSense, WDT
Supplier Device Package: 76-WLCSP (4.04x3.87)
Part Status: Obsolete
Number of I/O: 36
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
| CY8C4248FNI-BL483T |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 256KB FLASH 76WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 76-UFBGA, WLCSP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 16x12b SAR; D/A 2xIDAC
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I²C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Bluetooth, Brown-out Detect/Reset, Cap Sense, DMA LCD, LVD, POR, PWM, SmartCard, SmartSense, WDT
Supplier Device Package: 76-WLCSP (4.04×3.87)
Part Status: Obsolete
Number of I/O: 36
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 256KB FLASH 76WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 76-UFBGA, WLCSP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 16x12b SAR; D/A 2xIDAC
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I²C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Bluetooth, Brown-out Detect/Reset, Cap Sense, DMA LCD, LVD, POR, PWM, SmartCard, SmartSense, WDT
Supplier Device Package: 76-WLCSP (4.04×3.87)
Part Status: Obsolete
Number of I/O: 36
DigiKey Programmable: Not Verified
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| DEMOSENSE2GOLPULSETOBO1 |
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Виробник: Infineon Technologies
Description: SENSE2GOL PULSE BGT24LTR11 RADAR
Packaging: Bulk
For Use With/Related Products: BGT24LTR11, XMC4700
Frequency: 24GHz
Type: Transceiver; RADAR
Supplied Contents: Board(s)
Part Status: Active
Sensitivity: 24GHz
Sensor Type: Radar
Utilized IC / Part: BGT24LTR11, XMC4700
Embedded: Yes, MCU, 32-Bit
Sensing Range: 18m
Contents: Board(s)
Description: SENSE2GOL PULSE BGT24LTR11 RADAR
Packaging: Bulk
For Use With/Related Products: BGT24LTR11, XMC4700
Frequency: 24GHz
Type: Transceiver; RADAR
Supplied Contents: Board(s)
Part Status: Active
Sensitivity: 24GHz
Sensor Type: Radar
Utilized IC / Part: BGT24LTR11, XMC4700
Embedded: Yes, MCU, 32-Bit
Sensing Range: 18m
Contents: Board(s)
на замовлення 44 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 9781.73 грн |
| KP214N2611XT |
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Виробник: Infineon Technologies
Description: SENSOR 16.68PSIA 4.65V DSOF8
Packaging: Bulk
Features: Amplified Output, Temperature Compensated
Package / Case: 8-SMD Module
Output Type: Analog Voltage
Mounting Type: Surface Mount
Output: 0.18V ~ 4.65V
Operating Pressure: 2.18 ~ 16.68PSI (15 ~ 115kPa)
Pressure Type: Absolute
Accuracy: ±0.65PSI (4.50kPa)
Operating Temperature: -40°C ~ 125°C (TA)
Termination Style: SMD (SMT) Tab
Voltage - Supply: 4.5V ~ 5.5V
Applications: Board Mount
Supplier Device Package: PG-DSOF-8-16
Port Style: No Port
Part Status: Active
Description: SENSOR 16.68PSIA 4.65V DSOF8
Packaging: Bulk
Features: Amplified Output, Temperature Compensated
Package / Case: 8-SMD Module
Output Type: Analog Voltage
Mounting Type: Surface Mount
Output: 0.18V ~ 4.65V
Operating Pressure: 2.18 ~ 16.68PSI (15 ~ 115kPa)
Pressure Type: Absolute
Accuracy: ±0.65PSI (4.50kPa)
Operating Temperature: -40°C ~ 125°C (TA)
Termination Style: SMD (SMT) Tab
Voltage - Supply: 4.5V ~ 5.5V
Applications: Board Mount
Supplier Device Package: PG-DSOF-8-16
Port Style: No Port
Part Status: Active
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| BTS612N1E3128ABUMA1 |
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Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 TO263-7
Packaging: Cut Tape (CT)
Features: Auto Restart, Status Flag
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: Parallel
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 160mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 34V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3.5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO263-7-2
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, UVLO
Part Status: Not For New Designs
Description: IC PWR SWITCH N-CHAN 1:1 TO263-7
Packaging: Cut Tape (CT)
Features: Auto Restart, Status Flag
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: Parallel
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 160mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 34V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3.5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO263-7-2
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, UVLO
Part Status: Not For New Designs
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| BTN7970S |
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Виробник: Infineon Technologies
Description: HALF-BRIDGE PERIPHERAL DRIVER
Packaging: Bulk
Package / Case: TO-220-7 Formed Leads
Mounting Type: Through Hole
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 90A
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 8V ~ 18V
Technology: DMOS
Supplier Device Package: P-TO220-7-11
Motor Type - Stepper: Unipolar
Part Status: Obsolete
Grade: Automotive
Description: HALF-BRIDGE PERIPHERAL DRIVER
Packaging: Bulk
Package / Case: TO-220-7 Formed Leads
Mounting Type: Through Hole
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 90A
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 8V ~ 18V
Technology: DMOS
Supplier Device Package: P-TO220-7-11
Motor Type - Stepper: Unipolar
Part Status: Obsolete
Grade: Automotive
на замовлення 5755 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 70+ | 328.44 грн |
| TDA7110FHTMA1 |
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Виробник: Infineon Technologies
Description: RF TX IC ASK 433-435MHZ 10TFSOP
Packaging: Tape & Reel (TR)
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Frequency: 433MHz ~ 435MHz
Modulation or Protocol: ASK, FSK
Data Interface: PCB, Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.1V ~ 4V
Power - Output: 11dBm
Applications: Remote Control, RKE, Security Systems
Current - Transmitting: 21mA
Antenna Connector: PCB, Surface Mount
Supplier Device Package: PG-TSSOP-10-2
Part Status: Obsolete
DigiKey Programmable: Not Verified
Description: RF TX IC ASK 433-435MHZ 10TFSOP
Packaging: Tape & Reel (TR)
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Frequency: 433MHz ~ 435MHz
Modulation or Protocol: ASK, FSK
Data Interface: PCB, Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.1V ~ 4V
Power - Output: 11dBm
Applications: Remote Control, RKE, Security Systems
Current - Transmitting: 21mA
Antenna Connector: PCB, Surface Mount
Supplier Device Package: PG-TSSOP-10-2
Part Status: Obsolete
DigiKey Programmable: Not Verified
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| TDA7110FHTMA1 |
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Виробник: Infineon Technologies
Description: RF TX IC ASK 433-435MHZ 10TFSOP
Packaging: Cut Tape (CT)
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Frequency: 433MHz ~ 435MHz
Modulation or Protocol: ASK, FSK
Data Interface: PCB, Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.1V ~ 4V
Power - Output: 11dBm
Applications: Remote Control, RKE, Security Systems
Current - Transmitting: 21mA
Antenna Connector: PCB, Surface Mount
Supplier Device Package: PG-TSSOP-10-2
Part Status: Obsolete
DigiKey Programmable: Not Verified
Description: RF TX IC ASK 433-435MHZ 10TFSOP
Packaging: Cut Tape (CT)
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Frequency: 433MHz ~ 435MHz
Modulation or Protocol: ASK, FSK
Data Interface: PCB, Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.1V ~ 4V
Power - Output: 11dBm
Applications: Remote Control, RKE, Security Systems
Current - Transmitting: 21mA
Antenna Connector: PCB, Surface Mount
Supplier Device Package: PG-TSSOP-10-2
Part Status: Obsolete
DigiKey Programmable: Not Verified
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| BSZ076N06NS3G |
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Виробник: Infineon Technologies
Description: OPTLMOS N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 7.6mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 4V @ 35µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 30 V
Description: OPTLMOS N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 7.6mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 4V @ 35µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 30 V
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| BSZ0702LSATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 17A/40A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 36µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 30 V
Description: MOSFET N-CH 60V 17A/40A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 36µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 30 V
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| EVALPSIRS200XTOBO1 |
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Виробник: Infineon Technologies
Description: EVAL BOARD FOR PSIRS200X
Packaging: Bulk
Function: Motor Controller/Driver, Stepper
Type: Power Management
Utilized IC / Part: PSIRS200X
Supplied Contents: Board(s)
Part Status: Active
Contents: Board(s)
Description: EVAL BOARD FOR PSIRS200X
Packaging: Bulk
Function: Motor Controller/Driver, Stepper
Type: Power Management
Utilized IC / Part: PSIRS200X
Supplied Contents: Board(s)
Part Status: Active
Contents: Board(s)
на замовлення 1 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 14753.14 грн |
| IRL6372TRPBF |
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Виробник: Infineon Technologies
Description: MOSFET 2N-CH 30V 8.1A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8.1A
Input Capacitance (Ciss) (Max) @ Vds: 1020pF @ 25V
Rds On (Max) @ Id, Vgs: 17.9mOhm @ 8.1A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.1V @ 10µA
Supplier Device Package: 8-SO
Part Status: Active
Description: MOSFET 2N-CH 30V 8.1A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8.1A
Input Capacitance (Ciss) (Max) @ Vds: 1020pF @ 25V
Rds On (Max) @ Id, Vgs: 17.9mOhm @ 8.1A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.1V @ 10µA
Supplier Device Package: 8-SO
Part Status: Active
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4000+ | 22.12 грн |
| 8000+ | 20.03 грн |
| IRL6372TRPBF |
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Виробник: Infineon Technologies
Description: MOSFET 2N-CH 30V 8.1A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8.1A
Input Capacitance (Ciss) (Max) @ Vds: 1020pF @ 25V
Rds On (Max) @ Id, Vgs: 17.9mOhm @ 8.1A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.1V @ 10µA
Supplier Device Package: 8-SO
Part Status: Active
Description: MOSFET 2N-CH 30V 8.1A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8.1A
Input Capacitance (Ciss) (Max) @ Vds: 1020pF @ 25V
Rds On (Max) @ Id, Vgs: 17.9mOhm @ 8.1A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.1V @ 10µA
Supplier Device Package: 8-SO
Part Status: Active
на замовлення 11036 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 90.04 грн |
| 10+ | 44.39 грн |
| 100+ | 26.29 грн |
| 500+ | 21.24 грн |
| 1000+ | 20.84 грн |
| 2000+ | 20.67 грн |
| IRL60SC216ARMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 324A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 324A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 100A, 10V
Power Dissipation (Max): 2.4W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PG-TO263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 218 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 16000 pF @ 30 V
Description: MOSFET N-CH 60V 324A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 324A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 100A, 10V
Power Dissipation (Max): 2.4W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PG-TO263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 218 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 16000 pF @ 30 V
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| IRL60SC216ARMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 324A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 324A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 100A, 10V
Power Dissipation (Max): 2.4W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PG-TO263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 218 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 16000 pF @ 30 V
Description: MOSFET N-CH 60V 324A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 324A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 100A, 10V
Power Dissipation (Max): 2.4W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PG-TO263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 218 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 16000 pF @ 30 V
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| PMB8870V1.1 |
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на замовлення 206000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 27+ | 839.80 грн |
| MB90553BPMC-G-329-JNE1 |
Виробник: Infineon Technologies
Description: IC ANALOG
Packaging: Bulk
Part Status: Obsolete
DigiKey Programmable: Not Verified
Description: IC ANALOG
Packaging: Bulk
Part Status: Obsolete
DigiKey Programmable: Not Verified
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| MB90553BPMC-G-353-JNE1 |
Виробник: Infineon Technologies
Description: IC MCU 16BIT 128KB MROM 100LQFP
Packaging: Bulk
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: F²MC-16LX
Data Converters: A/D 8x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3.5V ~ 5.5V
Connectivity: I²C, SCI, UART/USART
Peripherals: POR, WDT
Supplier Device Package: 100-LQFP (14x14)
Part Status: Obsolete
Number of I/O: 83
DigiKey Programmable: Not Verified
Description: IC MCU 16BIT 128KB MROM 100LQFP
Packaging: Bulk
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: F²MC-16LX
Data Converters: A/D 8x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3.5V ~ 5.5V
Connectivity: I²C, SCI, UART/USART
Peripherals: POR, WDT
Supplier Device Package: 100-LQFP (14x14)
Part Status: Obsolete
Number of I/O: 83
DigiKey Programmable: Not Verified
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| MB90553BPMC-G-373E1 |
Виробник: Infineon Technologies
Description: IC MCU 16BIT 128KB MROM 100LQFP
Packaging: Bulk
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: F²MC-16LX
Data Converters: A/D 8x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3.5V ~ 5.5V
Connectivity: I²C, SCI, UART/USART
Peripherals: POR, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 83
DigiKey Programmable: Not Verified
Description: IC MCU 16BIT 128KB MROM 100LQFP
Packaging: Bulk
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: F²MC-16LX
Data Converters: A/D 8x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3.5V ~ 5.5V
Connectivity: I²C, SCI, UART/USART
Peripherals: POR, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 83
DigiKey Programmable: Not Verified
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| IPT65R105G7XTMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 24A 8HSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 8.9A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 4V @ 440µA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 400 V
Description: MOSFET N-CH 650V 24A 8HSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 8.9A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 4V @ 440µA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 400 V
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| IPP530N15N3GXKSA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 150V 21A TO220-3
Description: MOSFET N-CH 150V 21A TO220-3
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| BGSX22G2A10E6327XTSA1 |
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Виробник: Infineon Technologies
Description: IC RF SWITCH DPDT 6GHZ ATSLP10-2
Packaging: Tape & Reel (TR)
Package / Case: 10-UFQFN
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: DPDT
RF Type: General Purpose
Voltage - Supply: 2.3V ~ 3.4V
Frequency Range: 100MHz ~ 6GHz
Supplier Device Package: PG-ATSLP-10-2
Description: IC RF SWITCH DPDT 6GHZ ATSLP10-2
Packaging: Tape & Reel (TR)
Package / Case: 10-UFQFN
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: DPDT
RF Type: General Purpose
Voltage - Supply: 2.3V ~ 3.4V
Frequency Range: 100MHz ~ 6GHz
Supplier Device Package: PG-ATSLP-10-2
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| BTT61002ERAXUMA1 |
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Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 TDSO-14
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 100mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 36V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2.2A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TDSO-14-21
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
Description: IC PWR SWITCH N-CHAN 1:1 TDSO-14
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 100mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 36V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2.2A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TDSO-14-21
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
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| BTT60502ERAXUMA1 |
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Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 TDSO-14
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 50mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 36V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TDSO-14-31
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
Description: IC PWR SWITCH N-CHAN 1:1 TDSO-14
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 50mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 36V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TDSO-14-31
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
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| AUIRFC8408TR |
Виробник: Infineon Technologies
Description: MOSFET N-CH SMD D2PAK
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Description: MOSFET N-CH SMD D2PAK
Packaging: Tape & Reel (TR)
Part Status: Obsolete
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