Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (117859) > Сторінка 369 з 1965

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BFR360FH6765XTSA1 BFR360FH6765XTSA1 Infineon Technologies Infineon-BFP540ESD-DS-v02_00-EN.pdf?fileId=5546d462689a790c01690f0382ea3920 Description: RF TRANS NPN 9V 14GHZ PG-TSFP-3
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 15.5dB
Power - Max: 210mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 9V
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 15mA, 3V
Frequency - Transition: 14GHz
Noise Figure (dB Typ @ f): 1dB @ 1.8GHz
Supplier Device Package: PG-TSFP-3
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+5.97 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
BFR360FH6765XTSA1 BFR360FH6765XTSA1 Infineon Technologies Infineon-BFP540ESD-DS-v02_00-EN.pdf?fileId=5546d462689a790c01690f0382ea3920 Description: RF TRANS NPN 9V 14GHZ PG-TSFP-3
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 15.5dB
Power - Max: 210mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 9V
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 15mA, 3V
Frequency - Transition: 14GHz
Noise Figure (dB Typ @ f): 1dB @ 1.8GHz
Supplier Device Package: PG-TSFP-3
на замовлення 7714 шт:
термін постачання 21-31 дні (днів)
22+14.90 грн
31+9.82 грн
35+8.70 грн
100+6.95 грн
250+6.38 грн
500+6.04 грн
1000+5.66 грн
Мінімальне замовлення: 22
В кошику  од. на суму  грн.
IPP60R380E6XKSA1 IPP60R380E6XKSA1 Infineon Technologies IPP60R380E6_2_0.pdf?folderId=db3a3043163797a6011638933eda014b&fileId=db3a304327b8975001281f82741f44c8 Description: MOSFET N-CH 600V 10.6A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.8A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 320µA
Supplier Device Package: PG-TO220-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 100 V
на замовлення 500 шт:
термін постачання 21-31 дні (днів)
286+78.84 грн
Мінімальне замовлення: 286
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CY7C1518AV18-250BZC CY7C1518AV18-250BZC Infineon Technologies CY7C1518%2C20AV18.pdf Description: IC SRAM 72MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II
Clock Frequency: 250 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Memory Interface: Parallel
Memory Organization: 4M x 18
DigiKey Programmable: Not Verified
на замовлення 105 шт:
термін постачання 21-31 дні (днів)
3+8485.27 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
BTT3018EJDEMOBOARDTOBO1 BTT3018EJDEMOBOARDTOBO1 Infineon Technologies Infineon-Demoboard_BTT3018EJ-UserManual-v01_00-EN.pdf?fileId=5546d462712ef9b701712fc89f6a011a Description: BTT3018EJ DEMOBOARD
Packaging: Bulk
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTT3018EJ
Platform: Arduino
Part Status: Active
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
1+24858.09 грн
В кошику  од. на суму  грн.
BAV 70S H6327 BAV 70S H6327 Infineon Technologies INFNS11270-1.pdf?t.download=true&u=5oefqw Description: HIGH SPEED SWITCHING DIODE
Packaging: Bulk
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 2 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: PG-SOT363-6
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 150 nA @ 70 V
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KP254PS2GOKITTOBO1 KP254PS2GOKITTOBO1 Infineon Technologies Infineon-PS2GO_MS2Go_How_to_use_June2019-UserManual-v01_00-EN.pdf?fileId=5546d4626b2d8e69016b6b47f3fd5a18 Description: DIGITAL BAP PRESSURE SENSOR 2GO
Packaging: Box
Sensitivity: ±1.5kPa
Interface: Serial, SPI
Voltage - Supply: 3.3V, 5V
Sensor Type: Pressure
Utilized IC / Part: KP254
Supplied Contents: Board(s)
Sensing Range: 40 ~ 115 kPa
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
1+2825.37 грн
В кошику  од. на суму  грн.
IPD22N08S2L50ATMA1 IPD22N08S2L50ATMA1 Infineon Technologies Infineon-IPD22N08S2L_50-DS-v01_00-en.pdf?folderId=db3a304412b407950112b426dbff3ada&fileId=db3a304412b407950112b426ee5f3b08&ack=t Description: MOSFET N-CH 75V 27A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 50A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2V @ 31µA
Supplier Device Package: PG-TO252-3-11
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 25 V
на замовлення 9994 шт:
термін постачання 21-31 дні (днів)
3+148.25 грн
10+91.09 грн
100+61.72 грн
500+46.10 грн
1000+42.29 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
AUIRF2804L-313 AUIRF2804L-313 Infineon Technologies Description: MOSFET N-CH 40V 195A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 75A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6450 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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BASICPLUSDEMOBOARDTOBO1 BASICPLUSDEMOBOARDTOBO1 Infineon Technologies Infineon-LITIX_Basic+_Family_Board-PP-v01_00-EN.pdf?fileId=5546d46266a498f50166e96514f62bd9 Description: EVAL BOARD FOR TLD1114-1EP
Packaging: Bulk
Features: Dimmable
Voltage - Output: 1.4V ~ 7V
Voltage - Input: 8V ~ 16V
Current - Output / Channel: 60mA
Utilized IC / Part: TLD1114-1EP, TLD2141-3EP, TLD2331-3EP
Supplied Contents: Board(s)
Outputs and Type: 3 Non-Isolated Outputs
Part Status: Active
Contents: Board(s)
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
1+13005.18 грн
В кошику  од. на суму  грн.
SP370251160XTMA1 Infineon Technologies fundamentals-of-power-semiconductors Description: SENSOR TIRE PRESSURE DIGITAL
Packaging: Bulk
Output Type: Digital
Operating Temperature: -40°C ~ 125°C
Sensor Type: Tire Pressure Monitoring (TPMS)
на замовлення 50800 шт:
термін постачання 21-31 дні (днів)
57+359.06 грн
Мінімальне замовлення: 57
В кошику  од. на суму  грн.
FF45MR12W1M1B11BOMA1 FF45MR12W1M1B11BOMA1 Infineon Technologies Infineon-FF45MR12W1M1_B11-DS-v02_00-EN.pdf?fileId=5546d46266f85d6301670c714a15315c Description: MOSFET 2N-CH 1200V AG-EASY1BM-2
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 25A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 1840pF @ 800V
Rds On (Max) @ Id, Vgs: 45mOhm @ 25A, 15V (Typ)
Gate Charge (Qg) (Max) @ Vgs: 62nC @ 15V
Vgs(th) (Max) @ Id: 5.55V @ 10mA
Supplier Device Package: AG-EASY1BM-2
Part Status: Obsolete
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FF23MR12W1M1PB11BPSA1 FF23MR12W1M1PB11BPSA1 Infineon Technologies Infineon-FF23MR12W1M1P_B11-DS-v02_00-EN.pdf?fileId=5546d46268554f4a0168935460515bbc Description: MOSFET 2 IND 1200V 50A EASY1BM
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 50A
Input Capacitance (Ciss) (Max) @ Vds: 3680pF @ 800V
Rds On (Max) @ Id, Vgs: 22.5mOhm @ 50A, 15V
Gate Charge (Qg) (Max) @ Vgs: 124nC @ 15V
Vgs(th) (Max) @ Id: 5.5V @ 20mA
Supplier Device Package: AG-EASY1BM-2
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2ED020I06FI 2ED020I06FI Infineon Technologies INFN-S-A0001299747-1.pdf?t.download=true&u=5oefqw Description: HALF-BRIDGE PERIPHERAL DRIVER
Packaging: Bulk
Package / Case: 18-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 14V ~ 18V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-18-2
Rise / Fall Time (Typ): 20ns, 20ns
Channel Type: Independent
Driven Configuration: High-Side and Low-Side
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 1A, 2A
Part Status: Active
DigiKey Programmable: Not Verified
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IPB65R125C7ATMA2 IPB65R125C7ATMA2 Infineon Technologies Infineon-IPB65R125C7-DS-v02_00-en.pdf?fileId=db3a30434208e5fd0142094d378001a5 Description: MOSFET N-CH 650V 18A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 8.9A, 10V
Power Dissipation (Max): 101W (Tc)
Vgs(th) (Max) @ Id: 4V @ 440µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 400 V
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IPP65R115CFD7AAKSA1 IPP65R115CFD7AAKSA1 Infineon Technologies Infineon-IPP65R115CFD7A-DataSheet-v02_00-EN.pdf?fileId=5546d462712ef9b701714e935b90680e Description: MOSFET N-CH 650V 21A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 115mOhm @ 9.7A, 10V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 490µA
Supplier Device Package: PG-TO220-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 400 V
Qualification: AEC-Q101
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
1+327.09 грн
В кошику  од. на суму  грн.
IPP65R280E6 IPP65R280E6 Infineon Technologies INFN-S-A0004457106-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 4.4A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V
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IPP60R250CPXK IPP60R250CPXK Infineon Technologies Infineon-IPP60R250CP-DS-v02_01-en.pdf?fileId=db3a304316f66ee8011744d1654a2fa7 Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 7.8A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 520µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 100 V
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IPT60R125CFD7XTMA1 IPT60R125CFD7XTMA1 Infineon Technologies Description: MOSFET N-CH 600V 21A 8HSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 6.8A, 10V
Power Dissipation (Max): 127W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 340µA
Supplier Device Package: PG-HSOF-8-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 400 V
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IPT60R125CFD7XTMA1 IPT60R125CFD7XTMA1 Infineon Technologies Description: MOSFET N-CH 600V 21A 8HSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 6.8A, 10V
Power Dissipation (Max): 127W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 340µA
Supplier Device Package: PG-HSOF-8-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 400 V
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
2+282.38 грн
Мінімальне замовлення: 2
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AUIRF7669L2TR AUIRF7669L2TR Infineon Technologies auirf7669l2.pdf?fileId=5546d462533600a4015355ad8c6113f2 Description: MOSFET N-CH 100V 19A DIRECTFET
Packaging: Cut Tape (CT)
Package / Case: DirectFET™ Isometric L8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 114A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 68A, 10V
Power Dissipation (Max): 3.3W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: DirectFET™ Isometric L8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5660 pF @ 25 V
Qualification: AEC-Q101
на замовлення 3964 шт:
термін постачання 21-31 дні (днів)
1+499.66 грн
10+378.80 грн
100+350.36 грн
500+322.19 грн
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IRF7663 IRF7663 Infineon Technologies IRF7663.pdf Description: MOSFET P-CH 20V 8.2A MICRO8
Packaging: Tube
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 7A, 4.5V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: Micro8™
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2520 pF @ 10 V
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EVALSHNBV01DPS310TOBO1 Infineon Technologies Description: EVAL SENSOR HUB NANO DPS310
Packaging: Box
Interface: RF
Contents: Board(s)
Voltage - Supply: 1.7V ~ 3.6V
Sensor Type: Pressure
Utilized IC / Part: DPS310, XMC1100
Supplied Contents: Board(s)
Embedded: Yes, MCU, 32-Bit
Sensing Range: 300 ~ 1200 hPa
Part Status: Active
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S2GOPRESSUREDPS368TOBO1 S2GOPRESSUREDPS368TOBO1 Infineon Technologies Infineon-DPS368%20Shield2Go%20Quick%20Start%20Guide-GS-v01_00-EN.pdf?fileId=5546d46269e1c019016a3063d3ba7e44 Description: S2GO PRESSURE DPS368
Packaging: Bulk
Function: Pressure
Type: Sensor
Contents: Board(s)
Utilized IC / Part: DPS368
Platform: Shield2Go
Part Status: Active
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IRFC9024NB Infineon Technologies Description: MOSFET 55V 11A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: 11A
Rds On (Max) @ Id, Vgs: 175mOhm @ 11A, 10V
Supplier Device Package: Die
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 55 V
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XC2060N40F80LAAKXUMA1 XC2060N40F80LAAKXUMA1 Infineon Technologies Product_Cat_3-10-14.pdf Description: IC MCU 16/32B 320KB FLSH 100LQFP
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PEB3331HTV2.1 PEB3331HTV2.1 Infineon Technologies VINETIC_CPE.pdf?t.download=true&u=ovmfp3 Description: TELEPHONY INTERFACE CIRCUIT
Packaging: Bulk
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Function: Analog Voice Access
Interface: Parallel, PCM, Serial
Supplier Device Package: PG-TQFP-100
Part Status: Active
Number of Circuits: 1
на замовлення 1693 шт:
термін постачання 21-31 дні (днів)
22+940.34 грн
Мінімальне замовлення: 22
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C165LMHABXUMA1 C165LMHABXUMA1 Infineon Technologies c165_ds_v20_2000_12_7.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b4362c3764dc Description: IC MCU 16BIT ROMLESS 100MQFP
Packaging: Bulk
Package / Case: 100-BQFP
Mounting Type: Surface Mount
Speed: 20MHz
RAM Size: 2K x 8
Operating Temperature: 0°C ~ 70°C (TA)
Oscillator Type: External
Program Memory Type: ROMless
Core Processor: C166
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: EBI/EMI, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: P-MQFP-100
Part Status: Obsolete
Number of I/O: 77
DigiKey Programmable: Not Verified
на замовлення 926 шт:
термін постачання 21-31 дні (днів)
6+3821.81 грн
Мінімальне замовлення: 6
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EVAL2EDL05I06PFTOBO1 EVAL2EDL05I06PFTOBO1 Infineon Technologies Infineon-Evaluationboard_2EDL05I06PF-ApplicationNotes-v02_00-EN.pdf?fileId=db3a304340155f3d014029ae383a02fa Description: EVAL BOARD FOR 2EDL05I06-PF
Packaging: Bulk
Function: Gate Driver
Type: Power Management
Utilized IC / Part: 2EDL05I06-PF
Supplied Contents: Board(s)
Part Status: Active
Contents: Board(s)
товару немає в наявності
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BSC0500NSIATMA1 BSC0500NSIATMA1 Infineon Technologies Infineon-BSC0500NSI-DS-v02_00-EN.pdf?fileId=5546d4624eeb2bc7014efd4e65546362 Description: MOSFET N-CH 30V 35A/100A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 15 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
5000+55.99 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
BSC0500NSIATMA1 BSC0500NSIATMA1 Infineon Technologies Infineon-BSC0500NSI-DS-v02_00-EN.pdf?fileId=5546d4624eeb2bc7014efd4e65546362 Description: MOSFET N-CH 30V 35A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 15 V
на замовлення 9032 шт:
термін постачання 21-31 дні (днів)
2+186.68 грн
10+115.87 грн
100+79.46 грн
500+59.97 грн
1000+55.28 грн
2000+51.33 грн
Мінімальне замовлення: 2
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IPP65R660CFD IPP65R660CFD Infineon Technologies INFNS28046-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
на замовлення 4564 шт:
термін постачання 21-31 дні (днів)
460+49.18 грн
Мінімальне замовлення: 460
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IPP65R099CFD7AAKSA1 IPP65R099CFD7AAKSA1 Infineon Technologies Infineon-IPP65R099CFD7A-DataSheet-v02_00-EN.pdf?fileId=5546d462712ef9b701714e9346d9680b Description: MOSFET N-CH 650V 24A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 12.5A, 10V
Power Dissipation (Max): 127W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 630µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2513 pF @ 400 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 16 шт:
термін постачання 21-31 дні (днів)
1+375.72 грн
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IPP65R050CFD7AAKSA1 IPP65R050CFD7AAKSA1 Infineon Technologies Infineon-IPP65R050CFD7A-DataSheet-v02_00-EN.pdf?fileId=5546d462712ef9b701714e8a4ea46808 Description: MOSFET N-CH 650V 45A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 24.8A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.24mA
Supplier Device Package: PG-TO220-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4975 pF @ 400 V
Qualification: AEC-Q101
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BSC0901NSATMA1 BSC0901NSATMA1 Infineon Technologies BSC0901NS_Rev+1.21.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432c64a60d012cbc8040080376 Description: MOSFET N-CH 30V 28A/100A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 15 V
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)
5000+19.20 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
TLE7234E TLE7234E Infineon Technologies tle7234e_ds_101.pdf?t.download=true&u=5oefqw Description: BUFFER/INVERTER PERIPHL DRIVER
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
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TLE7234EM TLE7234EM Infineon Technologies tle7234em_ds_10.pdf?t.download=true&u=5oefqw Description: SPI DRIVER
Packaging: Bulk
Package / Case: 24-LSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: SPI
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side or Low Side
Rds On (Typ): 900mOhm, 1.6Ohm
Input Type: Non-Inverting
Voltage - Load: 5.5V ~ 28V
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Current - Output (Max): 175mA, 350mA
Ratio - Input:Output: 1:1
Supplier Device Package: PG-SSOP-24-4
Fault Protection: Open Load Detect, Over Temperature, Reverse Battery
Part Status: Active
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IPN70R750P7SATMA1 IPN70R750P7SATMA1 Infineon Technologies Infineon-IPN70R750P7S-DS-v02_00-EN.pdf?fileId=5546d4625f2e26bc015f526738e46b7a Description: MOSFET N-CH 700V 6.5A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 1.4A, 10V
Power Dissipation (Max): 6.7W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 70µA
Supplier Device Package: PG-SOT223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 306 pF @ 400 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+19.70 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
ISP772TFUMA1 ISP772TFUMA1 Infineon Technologies Infineon-ISP772T-DataSheet-v01_20-EN.pdf?fileId=5546d4626c1f3dc3016c904970db232a&redirId=115369 Description: IC PWR SWITCH N-CHAN 1:1 DSO-8
Packaging: Cut Tape (CT)
Features: Auto Restart
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -30°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 50mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 34V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2.6A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-8-24
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Active
на замовлення 5109 шт:
термін постачання 21-31 дні (днів)
3+143.54 грн
10+101.67 грн
25+92.57 грн
100+77.49 грн
250+73.01 грн
500+70.31 грн
1000+66.97 грн
Мінімальне замовлення: 3
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IRF3709ZSTRRPBF IRF3709ZSTRRPBF Infineon Technologies irf3709zpbf.pdf?fileId=5546d462533600a4015355df8d801943 Description: MOSFET N-CH 30V 87A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 87A (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 21A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2.25V @ 250µA
Supplier Device Package: D2PAK
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2130 pF @ 15 V
товару немає в наявності
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IRF3709ZSTRRPBF IRF3709ZSTRRPBF Infineon Technologies irf3709zpbf.pdf?fileId=5546d462533600a4015355df8d801943 Description: MOSFET N-CH 30V 87A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 87A (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 21A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2.25V @ 250µA
Supplier Device Package: D2PAK
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2130 pF @ 15 V
товару немає в наявності
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BB837E6327HTSA1 BB837E6327HTSA1 Infineon Technologies bb837_bb857series.pdf?folderId=db3a304313d846880113d94414f400fc&fileId=db3a304313d846880113d97339a9011a Description: DIODE VAR CAP 30V 20MA SOD-323
Packaging: Bulk
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Vr, F: 0.52pF @ 28V, 1MHz
Capacitance Ratio Condition: C1/C25
Supplier Device Package: PG-SOD323-3D
Voltage - Peak Reverse (Max): 30 V
Capacitance Ratio: 12.0
на замовлення 66085 шт:
термін постачання 21-31 дні (днів)
2377+9.71 грн
Мінімальне замовлення: 2377
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BAS3005A-02VE6327 BAS3005A-02VE6327 Infineon Technologies INFNS16691-1.pdf?t.download=true&u=5oefqw Description: DIODE SCHOTT 30V 500MA SC79-2-1
Packaging: Bulk
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 5V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: PG-SC79-2-1
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 500 mA
Current - Reverse Leakage @ Vr: 300 µA @ 30 V
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BAS3005A-02VH6327 BAS3005A-02VH6327 Infineon Technologies INFNS16691-1.pdf?t.download=true&u=5oefqw Description: DIODE SCHOTT 30V 500MA SC79-2-1
Packaging: Bulk
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 5V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: PG-SC79-2-1
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 500 mA
Current - Reverse Leakage @ Vr: 300 µA @ 30 V
товару немає в наявності
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IPP80N04S304AKSA1 IPP80N04S304AKSA1 Infineon Technologies INFNS10666-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 80A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 25 V
на замовлення 452 шт:
термін постачання 21-31 дні (днів)
334+60.56 грн
Мінімальне замовлення: 334
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IPP80N04S3-03 IPP80N04S3-03 Infineon Technologies INFNS10911-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 80A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 4V @ 120µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 25 V
на замовлення 345 шт:
термін постачання 21-31 дні (днів)
345+67.22 грн
Мінімальне замовлення: 345
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IPP80N04S2-H4 Infineon Technologies INFNS11807-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 148 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 25 V
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CY8C4127AXI-S443 CY8C4127AXI-S443 Infineon Technologies PSoC_4100S_Plus_RevH_9-14-18.pdf Description: IC MCU 32BIT 128KB FLASH 44TQFP
Packaging: Tray
Package / Case: 44-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b Slope, 16x12b SAR; D/A 2xIDAC
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
Supplier Device Package: 44-TQFP (10x10)
Number of I/O: 37
DigiKey Programmable: Not Verified
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IRLR7843TRLPBF IRLR7843TRLPBF Infineon Technologies irlr7843pbf.pdf?fileId=5546d462533600a40153566de53526d8 Description: MOSFET N-CH 30V 161A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 161A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 15A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4380 pF @ 15 V
товару немає в наявності
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IRLR7843TRLPBF IRLR7843TRLPBF Infineon Technologies irlr7843pbf.pdf?fileId=5546d462533600a40153566de53526d8 Description: MOSFET N-CH 30V 161A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 161A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 15A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4380 pF @ 15 V
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BAT5405WH6327XTSA1 BAT5405WH6327XTSA1 Infineon Technologies INFNS15399-1.pdf?t.download=true&u=5oefqw Description: DIODE ARR SCHOT 30V 200MA SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: PG-SOT323
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 102495 шт:
термін постачання 21-31 дні (днів)
13+25.10 грн
21+14.65 грн
100+9.21 грн
500+6.40 грн
1000+5.68 грн
Мінімальне замовлення: 13
В кошику  од. на суму  грн.
TLE4263GXUMA1 TLE4263GXUMA1 Infineon Technologies Infineon-TLE4263-2ES-DS-v01_00-EN.pdf?fileId=5546d46259d9a4bf015a1330ce5f0daf Description: IC REG LINEAR 5V 200MA PG-DSO-20
Packaging: Bulk
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 1.3 mA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-DSO-20
Voltage - Output (Min/Fixed): 5V
Control Features: Inhibit, Reset, Watchdog
Grade: Automotive
Part Status: Active
PSRR: 54dB (100Hz)
Voltage Dropout (Max): 0.5V @ 150mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 23 mA
Qualification: AEC-Q100
на замовлення 14000 шт:
термін постачання 21-31 дні (днів)
330+68.05 грн
Мінімальне замовлення: 330
В кошику  од. на суму  грн.
TLE4263GSNTMA1 Infineon Technologies fundamentals-of-power-semiconductors Description: IC REG LINEAR LDO 5V 0.2A 8DSOP
Packaging: Tape & Reel (TR)
Part Status: Active
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IRG4IBC10UDPBF IRG4IBC10UDPBF Infineon Technologies irg4ibc10udpbf.pdf?fileId=5546d462533600a401535643673122a9 Description: IGBT 600V 6.8A TO220AB FP
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 28 ns
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 5A
Supplier Device Package: TO-220AB Full-Pak
Td (on/off) @ 25°C: 40ns/87ns
Switching Energy: 140µJ (on), 120µJ (off)
Test Condition: 480V, 5A, 100Ohm, 15V
Gate Charge: 15 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 6.8 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 27 A
Power - Max: 25 W
на замовлення 2165 шт:
термін постачання 21-31 дні (днів)
155+129.05 грн
Мінімальне замовлення: 155
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SLF9630ID1XFSA2 Infineon Technologies Description: TRANSPORT TICKETING
товару немає в наявності
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BAS4007WH6327XTSA1 BAS4007WH6327XTSA1 Infineon Technologies INFNS19700-1.pdf?t.download=true&u=5oefqw Description: DIODE ARR SCHOTT 40V SOT343-4-3
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 100 ps
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 120mA (DC)
Supplier Device Package: PG-SOT343-4-3
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 1 µA @ 30 V
на замовлення 21000 шт:
термін постачання 21-31 дні (днів)
12+26.67 грн
19+16.01 грн
100+10.08 грн
500+7.04 грн
1000+6.26 грн
Мінімальне замовлення: 12
В кошику  од. на суму  грн.
BF517E6327 Infineon Technologies INFNS10757-1.pdf?t.download=true&u=5oefqw Description: RF 0.025, NPN
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 13dB
Power - Max: 280mW
Current - Collector (Ic) (Max): 25mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 2mA, 1V
Frequency - Transition: 2.5GHz
Noise Figure (dB Typ @ f): 3.5dB @ 800MHz
Supplier Device Package: PG-SOT23-3-3
Part Status: Active
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CY7C1460AV33-167BZC CY7C1460AV33-167BZC Infineon Technologies CY7C146xAV33_RevF.pdf Description: IC SRAM 36MBIT PAR 165FBGA
Packaging: Bulk
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 167 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Memory Interface: Parallel
Access Time: 3.4 ns
Memory Organization: 1M x 36
DigiKey Programmable: Not Verified
на замовлення 344 шт:
термін постачання 21-31 дні (днів)
6+4211.91 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
IPP114N03LGHKSA1 IPP114N03LGHKSA1 Infineon Technologies INFNS16463-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 11.4mOhm @ 30A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 15 V
на замовлення 12496 шт:
термін постачання 21-31 дні (днів)
944+23.18 грн
Мінімальне замовлення: 944
В кошику  од. на суму  грн.
IPP114N03LG Infineon Technologies INFNS17011-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 11.4mOhm @ 30A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 15 V
на замовлення 12946 шт:
термін постачання 21-31 дні (днів)
693+33.73 грн
Мінімальне замовлення: 693
В кошику  од. на суму  грн.
BFR360FH6765XTSA1 Infineon-BFP540ESD-DS-v02_00-EN.pdf?fileId=5546d462689a790c01690f0382ea3920
BFR360FH6765XTSA1
Виробник: Infineon Technologies
Description: RF TRANS NPN 9V 14GHZ PG-TSFP-3
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 15.5dB
Power - Max: 210mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 9V
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 15mA, 3V
Frequency - Transition: 14GHz
Noise Figure (dB Typ @ f): 1dB @ 1.8GHz
Supplier Device Package: PG-TSFP-3
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+5.97 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
BFR360FH6765XTSA1 Infineon-BFP540ESD-DS-v02_00-EN.pdf?fileId=5546d462689a790c01690f0382ea3920
BFR360FH6765XTSA1
Виробник: Infineon Technologies
Description: RF TRANS NPN 9V 14GHZ PG-TSFP-3
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 15.5dB
Power - Max: 210mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 9V
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 15mA, 3V
Frequency - Transition: 14GHz
Noise Figure (dB Typ @ f): 1dB @ 1.8GHz
Supplier Device Package: PG-TSFP-3
на замовлення 7714 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
22+14.90 грн
31+9.82 грн
35+8.70 грн
100+6.95 грн
250+6.38 грн
500+6.04 грн
1000+5.66 грн
Мінімальне замовлення: 22
В кошику  од. на суму  грн.
IPP60R380E6XKSA1 IPP60R380E6_2_0.pdf?folderId=db3a3043163797a6011638933eda014b&fileId=db3a304327b8975001281f82741f44c8
IPP60R380E6XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 10.6A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.8A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 320µA
Supplier Device Package: PG-TO220-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 100 V
на замовлення 500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
286+78.84 грн
Мінімальне замовлення: 286
В кошику  од. на суму  грн.
CY7C1518AV18-250BZC CY7C1518%2C20AV18.pdf
CY7C1518AV18-250BZC
Виробник: Infineon Technologies
Description: IC SRAM 72MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II
Clock Frequency: 250 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Memory Interface: Parallel
Memory Organization: 4M x 18
DigiKey Programmable: Not Verified
на замовлення 105 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+8485.27 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
BTT3018EJDEMOBOARDTOBO1 Infineon-Demoboard_BTT3018EJ-UserManual-v01_00-EN.pdf?fileId=5546d462712ef9b701712fc89f6a011a
BTT3018EJDEMOBOARDTOBO1
Виробник: Infineon Technologies
Description: BTT3018EJ DEMOBOARD
Packaging: Bulk
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTT3018EJ
Platform: Arduino
Part Status: Active
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+24858.09 грн
В кошику  од. на суму  грн.
BAV 70S H6327 INFNS11270-1.pdf?t.download=true&u=5oefqw
BAV 70S H6327
Виробник: Infineon Technologies
Description: HIGH SPEED SWITCHING DIODE
Packaging: Bulk
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 2 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: PG-SOT363-6
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 150 nA @ 70 V
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KP254PS2GOKITTOBO1 Infineon-PS2GO_MS2Go_How_to_use_June2019-UserManual-v01_00-EN.pdf?fileId=5546d4626b2d8e69016b6b47f3fd5a18
KP254PS2GOKITTOBO1
Виробник: Infineon Technologies
Description: DIGITAL BAP PRESSURE SENSOR 2GO
Packaging: Box
Sensitivity: ±1.5kPa
Interface: Serial, SPI
Voltage - Supply: 3.3V, 5V
Sensor Type: Pressure
Utilized IC / Part: KP254
Supplied Contents: Board(s)
Sensing Range: 40 ~ 115 kPa
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2825.37 грн
В кошику  од. на суму  грн.
IPD22N08S2L50ATMA1 Infineon-IPD22N08S2L_50-DS-v01_00-en.pdf?folderId=db3a304412b407950112b426dbff3ada&fileId=db3a304412b407950112b426ee5f3b08&ack=t
IPD22N08S2L50ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 75V 27A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 50A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2V @ 31µA
Supplier Device Package: PG-TO252-3-11
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 25 V
на замовлення 9994 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+148.25 грн
10+91.09 грн
100+61.72 грн
500+46.10 грн
1000+42.29 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
AUIRF2804L-313
AUIRF2804L-313
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 195A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 75A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6450 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
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BASICPLUSDEMOBOARDTOBO1 Infineon-LITIX_Basic+_Family_Board-PP-v01_00-EN.pdf?fileId=5546d46266a498f50166e96514f62bd9
BASICPLUSDEMOBOARDTOBO1
Виробник: Infineon Technologies
Description: EVAL BOARD FOR TLD1114-1EP
Packaging: Bulk
Features: Dimmable
Voltage - Output: 1.4V ~ 7V
Voltage - Input: 8V ~ 16V
Current - Output / Channel: 60mA
Utilized IC / Part: TLD1114-1EP, TLD2141-3EP, TLD2331-3EP
Supplied Contents: Board(s)
Outputs and Type: 3 Non-Isolated Outputs
Part Status: Active
Contents: Board(s)
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+13005.18 грн
В кошику  од. на суму  грн.
SP370251160XTMA1 fundamentals-of-power-semiconductors
Виробник: Infineon Technologies
Description: SENSOR TIRE PRESSURE DIGITAL
Packaging: Bulk
Output Type: Digital
Operating Temperature: -40°C ~ 125°C
Sensor Type: Tire Pressure Monitoring (TPMS)
на замовлення 50800 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
57+359.06 грн
Мінімальне замовлення: 57
В кошику  од. на суму  грн.
FF45MR12W1M1B11BOMA1 Infineon-FF45MR12W1M1_B11-DS-v02_00-EN.pdf?fileId=5546d46266f85d6301670c714a15315c
FF45MR12W1M1B11BOMA1
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 1200V AG-EASY1BM-2
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 25A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 1840pF @ 800V
Rds On (Max) @ Id, Vgs: 45mOhm @ 25A, 15V (Typ)
Gate Charge (Qg) (Max) @ Vgs: 62nC @ 15V
Vgs(th) (Max) @ Id: 5.55V @ 10mA
Supplier Device Package: AG-EASY1BM-2
Part Status: Obsolete
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FF23MR12W1M1PB11BPSA1 Infineon-FF23MR12W1M1P_B11-DS-v02_00-EN.pdf?fileId=5546d46268554f4a0168935460515bbc
FF23MR12W1M1PB11BPSA1
Виробник: Infineon Technologies
Description: MOSFET 2 IND 1200V 50A EASY1BM
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 50A
Input Capacitance (Ciss) (Max) @ Vds: 3680pF @ 800V
Rds On (Max) @ Id, Vgs: 22.5mOhm @ 50A, 15V
Gate Charge (Qg) (Max) @ Vgs: 124nC @ 15V
Vgs(th) (Max) @ Id: 5.5V @ 20mA
Supplier Device Package: AG-EASY1BM-2
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2ED020I06FI INFN-S-A0001299747-1.pdf?t.download=true&u=5oefqw
2ED020I06FI
Виробник: Infineon Technologies
Description: HALF-BRIDGE PERIPHERAL DRIVER
Packaging: Bulk
Package / Case: 18-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 14V ~ 18V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-18-2
Rise / Fall Time (Typ): 20ns, 20ns
Channel Type: Independent
Driven Configuration: High-Side and Low-Side
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 1A, 2A
Part Status: Active
DigiKey Programmable: Not Verified
товару немає в наявності
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IPB65R125C7ATMA2 Infineon-IPB65R125C7-DS-v02_00-en.pdf?fileId=db3a30434208e5fd0142094d378001a5
IPB65R125C7ATMA2
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 18A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 8.9A, 10V
Power Dissipation (Max): 101W (Tc)
Vgs(th) (Max) @ Id: 4V @ 440µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 400 V
товару немає в наявності
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IPP65R115CFD7AAKSA1 Infineon-IPP65R115CFD7A-DataSheet-v02_00-EN.pdf?fileId=5546d462712ef9b701714e935b90680e
IPP65R115CFD7AAKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 21A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 115mOhm @ 9.7A, 10V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 490µA
Supplier Device Package: PG-TO220-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 400 V
Qualification: AEC-Q101
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+327.09 грн
В кошику  од. на суму  грн.
IPP65R280E6 INFN-S-A0004457106-1.pdf?t.download=true&u=5oefqw
IPP65R280E6
Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 4.4A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V
товару немає в наявності
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IPP60R250CPXK Infineon-IPP60R250CP-DS-v02_01-en.pdf?fileId=db3a304316f66ee8011744d1654a2fa7
IPP60R250CPXK
Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 7.8A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 520µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 100 V
товару немає в наявності
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IPT60R125CFD7XTMA1
IPT60R125CFD7XTMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 21A 8HSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 6.8A, 10V
Power Dissipation (Max): 127W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 340µA
Supplier Device Package: PG-HSOF-8-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 400 V
товару немає в наявності
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IPT60R125CFD7XTMA1
IPT60R125CFD7XTMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 21A 8HSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 6.8A, 10V
Power Dissipation (Max): 127W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 340µA
Supplier Device Package: PG-HSOF-8-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 400 V
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+282.38 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
AUIRF7669L2TR auirf7669l2.pdf?fileId=5546d462533600a4015355ad8c6113f2
AUIRF7669L2TR
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 19A DIRECTFET
Packaging: Cut Tape (CT)
Package / Case: DirectFET™ Isometric L8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 114A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 68A, 10V
Power Dissipation (Max): 3.3W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: DirectFET™ Isometric L8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5660 pF @ 25 V
Qualification: AEC-Q101
на замовлення 3964 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+499.66 грн
10+378.80 грн
100+350.36 грн
500+322.19 грн
В кошику  од. на суму  грн.
IRF7663 IRF7663.pdf
IRF7663
Виробник: Infineon Technologies
Description: MOSFET P-CH 20V 8.2A MICRO8
Packaging: Tube
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 7A, 4.5V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: Micro8™
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2520 pF @ 10 V
товару немає в наявності
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EVALSHNBV01DPS310TOBO1
Виробник: Infineon Technologies
Description: EVAL SENSOR HUB NANO DPS310
Packaging: Box
Interface: RF
Contents: Board(s)
Voltage - Supply: 1.7V ~ 3.6V
Sensor Type: Pressure
Utilized IC / Part: DPS310, XMC1100
Supplied Contents: Board(s)
Embedded: Yes, MCU, 32-Bit
Sensing Range: 300 ~ 1200 hPa
Part Status: Active
товару немає в наявності
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S2GOPRESSUREDPS368TOBO1 Infineon-DPS368%20Shield2Go%20Quick%20Start%20Guide-GS-v01_00-EN.pdf?fileId=5546d46269e1c019016a3063d3ba7e44
S2GOPRESSUREDPS368TOBO1
Виробник: Infineon Technologies
Description: S2GO PRESSURE DPS368
Packaging: Bulk
Function: Pressure
Type: Sensor
Contents: Board(s)
Utilized IC / Part: DPS368
Platform: Shield2Go
Part Status: Active
товару немає в наявності
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IRFC9024NB
Виробник: Infineon Technologies
Description: MOSFET 55V 11A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: 11A
Rds On (Max) @ Id, Vgs: 175mOhm @ 11A, 10V
Supplier Device Package: Die
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 55 V
товару немає в наявності
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XC2060N40F80LAAKXUMA1 Product_Cat_3-10-14.pdf
XC2060N40F80LAAKXUMA1
Виробник: Infineon Technologies
Description: IC MCU 16/32B 320KB FLSH 100LQFP
товару немає в наявності
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PEB3331HTV2.1 VINETIC_CPE.pdf?t.download=true&u=ovmfp3
PEB3331HTV2.1
Виробник: Infineon Technologies
Description: TELEPHONY INTERFACE CIRCUIT
Packaging: Bulk
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Function: Analog Voice Access
Interface: Parallel, PCM, Serial
Supplier Device Package: PG-TQFP-100
Part Status: Active
Number of Circuits: 1
на замовлення 1693 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
22+940.34 грн
Мінімальне замовлення: 22
В кошику  од. на суму  грн.
C165LMHABXUMA1 c165_ds_v20_2000_12_7.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b4362c3764dc
C165LMHABXUMA1
Виробник: Infineon Technologies
Description: IC MCU 16BIT ROMLESS 100MQFP
Packaging: Bulk
Package / Case: 100-BQFP
Mounting Type: Surface Mount
Speed: 20MHz
RAM Size: 2K x 8
Operating Temperature: 0°C ~ 70°C (TA)
Oscillator Type: External
Program Memory Type: ROMless
Core Processor: C166
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: EBI/EMI, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: P-MQFP-100
Part Status: Obsolete
Number of I/O: 77
DigiKey Programmable: Not Verified
на замовлення 926 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6+3821.81 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
EVAL2EDL05I06PFTOBO1 Infineon-Evaluationboard_2EDL05I06PF-ApplicationNotes-v02_00-EN.pdf?fileId=db3a304340155f3d014029ae383a02fa
EVAL2EDL05I06PFTOBO1
Виробник: Infineon Technologies
Description: EVAL BOARD FOR 2EDL05I06-PF
Packaging: Bulk
Function: Gate Driver
Type: Power Management
Utilized IC / Part: 2EDL05I06-PF
Supplied Contents: Board(s)
Part Status: Active
Contents: Board(s)
товару немає в наявності
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BSC0500NSIATMA1 Infineon-BSC0500NSI-DS-v02_00-EN.pdf?fileId=5546d4624eeb2bc7014efd4e65546362
BSC0500NSIATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 35A/100A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 15 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5000+55.99 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
BSC0500NSIATMA1 Infineon-BSC0500NSI-DS-v02_00-EN.pdf?fileId=5546d4624eeb2bc7014efd4e65546362
BSC0500NSIATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 35A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 15 V
на замовлення 9032 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+186.68 грн
10+115.87 грн
100+79.46 грн
500+59.97 грн
1000+55.28 грн
2000+51.33 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPP65R660CFD INFNS28046-1.pdf?t.download=true&u=5oefqw
IPP65R660CFD
Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
на замовлення 4564 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
460+49.18 грн
Мінімальне замовлення: 460
В кошику  од. на суму  грн.
IPP65R099CFD7AAKSA1 Infineon-IPP65R099CFD7A-DataSheet-v02_00-EN.pdf?fileId=5546d462712ef9b701714e9346d9680b
IPP65R099CFD7AAKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 24A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 12.5A, 10V
Power Dissipation (Max): 127W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 630µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2513 pF @ 400 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 16 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+375.72 грн
В кошику  од. на суму  грн.
IPP65R050CFD7AAKSA1 Infineon-IPP65R050CFD7A-DataSheet-v02_00-EN.pdf?fileId=5546d462712ef9b701714e8a4ea46808
IPP65R050CFD7AAKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 45A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 24.8A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.24mA
Supplier Device Package: PG-TO220-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4975 pF @ 400 V
Qualification: AEC-Q101
товару немає в наявності
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BSC0901NSATMA1 BSC0901NS_Rev+1.21.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432c64a60d012cbc8040080376
BSC0901NSATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 28A/100A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 15 V
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5000+19.20 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
TLE7234E tle7234e_ds_101.pdf?t.download=true&u=5oefqw
TLE7234E
Виробник: Infineon Technologies
Description: BUFFER/INVERTER PERIPHL DRIVER
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
TLE7234EM tle7234em_ds_10.pdf?t.download=true&u=5oefqw
TLE7234EM
Виробник: Infineon Technologies
Description: SPI DRIVER
Packaging: Bulk
Package / Case: 24-LSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: SPI
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side or Low Side
Rds On (Typ): 900mOhm, 1.6Ohm
Input Type: Non-Inverting
Voltage - Load: 5.5V ~ 28V
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Current - Output (Max): 175mA, 350mA
Ratio - Input:Output: 1:1
Supplier Device Package: PG-SSOP-24-4
Fault Protection: Open Load Detect, Over Temperature, Reverse Battery
Part Status: Active
товару немає в наявності
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IPN70R750P7SATMA1 Infineon-IPN70R750P7S-DS-v02_00-EN.pdf?fileId=5546d4625f2e26bc015f526738e46b7a
IPN70R750P7SATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 700V 6.5A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 1.4A, 10V
Power Dissipation (Max): 6.7W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 70µA
Supplier Device Package: PG-SOT223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 306 pF @ 400 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+19.70 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
ISP772TFUMA1 Infineon-ISP772T-DataSheet-v01_20-EN.pdf?fileId=5546d4626c1f3dc3016c904970db232a&redirId=115369
ISP772TFUMA1
Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 DSO-8
Packaging: Cut Tape (CT)
Features: Auto Restart
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -30°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 50mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 34V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2.6A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-8-24
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Active
на замовлення 5109 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+143.54 грн
10+101.67 грн
25+92.57 грн
100+77.49 грн
250+73.01 грн
500+70.31 грн
1000+66.97 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IRF3709ZSTRRPBF irf3709zpbf.pdf?fileId=5546d462533600a4015355df8d801943
IRF3709ZSTRRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 87A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 87A (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 21A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2.25V @ 250µA
Supplier Device Package: D2PAK
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2130 pF @ 15 V
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IRF3709ZSTRRPBF irf3709zpbf.pdf?fileId=5546d462533600a4015355df8d801943
IRF3709ZSTRRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 87A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 87A (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 21A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2.25V @ 250µA
Supplier Device Package: D2PAK
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2130 pF @ 15 V
товару немає в наявності
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BB837E6327HTSA1 bb837_bb857series.pdf?folderId=db3a304313d846880113d94414f400fc&fileId=db3a304313d846880113d97339a9011a
BB837E6327HTSA1
Виробник: Infineon Technologies
Description: DIODE VAR CAP 30V 20MA SOD-323
Packaging: Bulk
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Vr, F: 0.52pF @ 28V, 1MHz
Capacitance Ratio Condition: C1/C25
Supplier Device Package: PG-SOD323-3D
Voltage - Peak Reverse (Max): 30 V
Capacitance Ratio: 12.0
на замовлення 66085 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2377+9.71 грн
Мінімальне замовлення: 2377
В кошику  од. на суму  грн.
BAS3005A-02VE6327 INFNS16691-1.pdf?t.download=true&u=5oefqw
BAS3005A-02VE6327
Виробник: Infineon Technologies
Description: DIODE SCHOTT 30V 500MA SC79-2-1
Packaging: Bulk
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 5V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: PG-SC79-2-1
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 500 mA
Current - Reverse Leakage @ Vr: 300 µA @ 30 V
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BAS3005A-02VH6327 INFNS16691-1.pdf?t.download=true&u=5oefqw
BAS3005A-02VH6327
Виробник: Infineon Technologies
Description: DIODE SCHOTT 30V 500MA SC79-2-1
Packaging: Bulk
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 5V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: PG-SC79-2-1
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 500 mA
Current - Reverse Leakage @ Vr: 300 µA @ 30 V
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IPP80N04S304AKSA1 INFNS10666-1.pdf?t.download=true&u=5oefqw
IPP80N04S304AKSA1
Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 80A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 25 V
на замовлення 452 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
334+60.56 грн
Мінімальне замовлення: 334
В кошику  од. на суму  грн.
IPP80N04S3-03 INFNS10911-1.pdf?t.download=true&u=5oefqw
IPP80N04S3-03
Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 80A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 4V @ 120µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 25 V
на замовлення 345 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
345+67.22 грн
Мінімальне замовлення: 345
В кошику  од. на суму  грн.
IPP80N04S2-H4 INFNS11807-1.pdf?t.download=true&u=5oefqw
Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 148 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 25 V
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CY8C4127AXI-S443 PSoC_4100S_Plus_RevH_9-14-18.pdf
CY8C4127AXI-S443
Виробник: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 44TQFP
Packaging: Tray
Package / Case: 44-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b Slope, 16x12b SAR; D/A 2xIDAC
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
Supplier Device Package: 44-TQFP (10x10)
Number of I/O: 37
DigiKey Programmable: Not Verified
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IRLR7843TRLPBF irlr7843pbf.pdf?fileId=5546d462533600a40153566de53526d8
IRLR7843TRLPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 161A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 161A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 15A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4380 pF @ 15 V
товару немає в наявності
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IRLR7843TRLPBF irlr7843pbf.pdf?fileId=5546d462533600a40153566de53526d8
IRLR7843TRLPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 161A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 161A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 15A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4380 pF @ 15 V
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BAT5405WH6327XTSA1 INFNS15399-1.pdf?t.download=true&u=5oefqw
BAT5405WH6327XTSA1
Виробник: Infineon Technologies
Description: DIODE ARR SCHOT 30V 200MA SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: PG-SOT323
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 102495 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
13+25.10 грн
21+14.65 грн
100+9.21 грн
500+6.40 грн
1000+5.68 грн
Мінімальне замовлення: 13
В кошику  од. на суму  грн.
TLE4263GXUMA1 Infineon-TLE4263-2ES-DS-v01_00-EN.pdf?fileId=5546d46259d9a4bf015a1330ce5f0daf
TLE4263GXUMA1
Виробник: Infineon Technologies
Description: IC REG LINEAR 5V 200MA PG-DSO-20
Packaging: Bulk
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 1.3 mA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-DSO-20
Voltage - Output (Min/Fixed): 5V
Control Features: Inhibit, Reset, Watchdog
Grade: Automotive
Part Status: Active
PSRR: 54dB (100Hz)
Voltage Dropout (Max): 0.5V @ 150mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 23 mA
Qualification: AEC-Q100
на замовлення 14000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
330+68.05 грн
Мінімальне замовлення: 330
В кошику  од. на суму  грн.
TLE4263GSNTMA1 fundamentals-of-power-semiconductors
Виробник: Infineon Technologies
Description: IC REG LINEAR LDO 5V 0.2A 8DSOP
Packaging: Tape & Reel (TR)
Part Status: Active
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IRG4IBC10UDPBF irg4ibc10udpbf.pdf?fileId=5546d462533600a401535643673122a9
IRG4IBC10UDPBF
Виробник: Infineon Technologies
Description: IGBT 600V 6.8A TO220AB FP
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 28 ns
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 5A
Supplier Device Package: TO-220AB Full-Pak
Td (on/off) @ 25°C: 40ns/87ns
Switching Energy: 140µJ (on), 120µJ (off)
Test Condition: 480V, 5A, 100Ohm, 15V
Gate Charge: 15 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 6.8 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 27 A
Power - Max: 25 W
на замовлення 2165 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
155+129.05 грн
Мінімальне замовлення: 155
В кошику  од. на суму  грн.
SLF9630ID1XFSA2
Виробник: Infineon Technologies
Description: TRANSPORT TICKETING
товару немає в наявності
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BAS4007WH6327XTSA1 INFNS19700-1.pdf?t.download=true&u=5oefqw
BAS4007WH6327XTSA1
Виробник: Infineon Technologies
Description: DIODE ARR SCHOTT 40V SOT343-4-3
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 100 ps
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 120mA (DC)
Supplier Device Package: PG-SOT343-4-3
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 1 µA @ 30 V
на замовлення 21000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
12+26.67 грн
19+16.01 грн
100+10.08 грн
500+7.04 грн
1000+6.26 грн
Мінімальне замовлення: 12
В кошику  од. на суму  грн.
BF517E6327 INFNS10757-1.pdf?t.download=true&u=5oefqw
Виробник: Infineon Technologies
Description: RF 0.025, NPN
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 13dB
Power - Max: 280mW
Current - Collector (Ic) (Max): 25mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 2mA, 1V
Frequency - Transition: 2.5GHz
Noise Figure (dB Typ @ f): 3.5dB @ 800MHz
Supplier Device Package: PG-SOT23-3-3
Part Status: Active
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CY7C1460AV33-167BZC CY7C146xAV33_RevF.pdf
CY7C1460AV33-167BZC
Виробник: Infineon Technologies
Description: IC SRAM 36MBIT PAR 165FBGA
Packaging: Bulk
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 167 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Memory Interface: Parallel
Access Time: 3.4 ns
Memory Organization: 1M x 36
DigiKey Programmable: Not Verified
на замовлення 344 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6+4211.91 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
IPP114N03LGHKSA1 INFNS16463-1.pdf?t.download=true&u=5oefqw
IPP114N03LGHKSA1
Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 11.4mOhm @ 30A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 15 V
на замовлення 12496 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
944+23.18 грн
Мінімальне замовлення: 944
В кошику  од. на суму  грн.
IPP114N03LG INFNS17011-1.pdf?t.download=true&u=5oefqw
Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 11.4mOhm @ 30A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 15 V
на замовлення 12946 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
693+33.73 грн
Мінімальне замовлення: 693
В кошику  од. на суму  грн.
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