Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (124748) > Сторінка 411 з 2080
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||
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AUIRLL024ZTR | Infineon Technologies |
Description: MOSFET N-CH 55V 5A SOT223Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Rds On (Max) @ Id, Vgs: 60mOhm @ 3A, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-223 Grade: Automotive Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 25 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FS10R12VT3BOMA1 | Infineon Technologies |
Description: IGBT MODULE 1200V 16A 64WPackaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 125°C Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 10A NTC Thermistor: No Supplier Device Package: Module Current - Collector (Ic) (Max): 16 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 64 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 700 pF @ 25 V |
на замовлення 118 шт: термін постачання 21-31 дні (днів) |
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IRU3012CW | Infineon Technologies |
Description: IC REG BUCK 20SOICMounting Type: Surface Mount Package / Case: 20-SOIC (0.295", 7.50mm Width) Packaging: Tube Part Status: Obsolete Supplier Device Package: 20-SOIC |
товару немає в наявності |
Мінімальне замовлення: 38 шт В кошику од. на суму грн. | ||||||||||||||||
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FF400R12KT3EHOSA1 | Infineon Technologies |
Description: IGBT MOD 1200V 580A 2000WPackaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: 2 Independent Operating Temperature: -40°C ~ 125°C Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 400A NTC Thermistor: No Supplier Device Package: Module Part Status: Not For New Designs Current - Collector (Ic) (Max): 580 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 2000 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 28 nF @ 25 V |
на замовлення 193 шт: термін постачання 21-31 дні (днів) |
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FF400R12KT3PEHOSA1 | Infineon Technologies |
Description: IGBT MODULE 1200V 400APackaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Half Bridge Operating Temperature: -40°C ~ 125°C Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 400A NTC Thermistor: No Supplier Device Package: Module IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 400 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 28 nF @ 25 V |
на замовлення 80 шт: термін постачання 21-31 дні (днів) |
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CY7C1314KV18-250BZC | Infineon Technologies |
Description: IC SRAM 18MBIT PARALLEL 165FBGA |
на замовлення 116 шт: термін постачання 21-31 дні (днів) |
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TLE42994GMXUMA3 | Infineon Technologies |
Description: IC REG LINEAR 5V 150MA PG-DSO-14Qualification: AEC-Q100 Grade: Automotive Current - Supply (Max): 2 mA Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit Voltage Dropout (Max): 0.5V @ 100mA PSRR: 66dB (100Hz) Part Status: Active Control Features: Enable, Reset Voltage - Output (Min/Fixed): 5V Supplier Device Package: PG-DSO-14 Number of Regulators: 1 Voltage - Input (Max): 45V Current - Quiescent (Iq): 1 µA Output Configuration: Positive Operating Temperature: -40°C ~ 150°C (TJ) Current - Output: 150mA Mounting Type: Surface Mount Output Type: Fixed Package / Case: 14-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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TLE42994GMXUMA3 | Infineon Technologies |
Description: IC REG LINEAR 5V 150MA PG-DSO-14Current - Supply (Max): 2 mA Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit Voltage Dropout (Max): 0.5V @ 100mA PSRR: 66dB (100Hz) Part Status: Active Qualification: AEC-Q100 Grade: Automotive Control Features: Enable, Reset Voltage - Output (Min/Fixed): 5V Supplier Device Package: PG-DSO-14 Number of Regulators: 1 Voltage - Input (Max): 45V Current - Quiescent (Iq): 1 µA Output Configuration: Positive Operating Temperature: -40°C ~ 150°C (TJ) Current - Output: 150mA Mounting Type: Surface Mount Output Type: Fixed Package / Case: 14-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
на замовлення 4286 шт: термін постачання 21-31 дні (днів) |
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IPB051NE8NG | Infineon Technologies |
Description: N-CHANNEL POWER MOSFET |
на замовлення 775 шт: термін постачання 21-31 дні (днів) |
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IPB051NE8NGATMA1 | Infineon Technologies |
Description: N-CHANNEL POWER MOSFET |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BTN70301EPAXUMA1 | Infineon Technologies |
Description: IC HALF BRIDGE DRVR 7A TSDSO-14Packaging: Tape & Reel (TR) Features: Diagnostic Enable, Enable, SENSE Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad Mounting Type: Surface Mount Interface: Logic Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Half Bridge Voltage - Supply: 6V ~ 18V Rds On (Typ): 20mOhm LS, 12mOhm HS Applications: DC Motors, General Purpose Current - Output / Channel: 7A Current - Peak Output: 17A Technology: SMART7 Supplier Device Package: PG-TSDSO-14 Fault Protection: Current Limiting, Over Current, Over Temperature, Over Voltage, Short Circuit Load Type: Inductive Part Status: Active |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
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BTN70301EPAXUMA1 | Infineon Technologies |
Description: IC HALF BRIDGE DRVR 7A TSDSO-14Packaging: Cut Tape (CT) Features: Diagnostic Enable, Enable, SENSE Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad Mounting Type: Surface Mount Interface: Logic Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Half Bridge Voltage - Supply: 6V ~ 18V Rds On (Typ): 20mOhm LS, 12mOhm HS Applications: DC Motors, General Purpose Current - Output / Channel: 7A Current - Peak Output: 17A Technology: SMART7 Supplier Device Package: PG-TSDSO-14 Fault Protection: Current Limiting, Over Current, Over Temperature, Over Voltage, Short Circuit Load Type: Inductive Part Status: Active |
на замовлення 2729 шт: термін постачання 21-31 дні (днів) |
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| TLE7237SLXUMA2 | Infineon Technologies | Description: IC DRIVER SPI RELAY CTRL 24SSOP |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||||||||||
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BTS612N1E3128ABUMA1 | Infineon Technologies |
Description: IC PWR SWITCH N-CHAN 1:1 TO263-7Part Status: Not For New Designs Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, UVLO Supplier Device Package: PG-TO263-7-2 Ratio - Input:Output: 1:1 Current - Output (Max): 3.5A Voltage - Supply (Vcc/Vdd): Not Required Voltage - Load: 5V ~ 34V Input Type: Non-Inverting Rds On (Typ): 160mOhm Output Configuration: High Side Operating Temperature: -40°C ~ 150°C (TJ) Switch Type: General Purpose Interface: Parallel Number of Outputs: 2 Mounting Type: Surface Mount Output Type: N-Channel Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Features: Auto Restart, Status Flag Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||||
| TD61N1625KOFHPSA1 | Infineon Technologies |
Description: SCR MODULE PB20-1 Packaging: Tray |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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TLV4961-3M | Infineon Technologies |
Description: TLV4961 - HALL SWITCH |
на замовлення 180000 шт: термін постачання 21-31 дні (днів) |
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TLE4961-3K | Infineon Technologies |
Description: TLE4961 - HALL SWITCH |
на замовлення 333000 шт: термін постачання 21-31 дні (днів) |
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| TLV49613TBXALA1 | Infineon Technologies |
Description: MAGNETIC SWITCH LATCH TO92S |
на замовлення 34000 шт: термін постачання 21-31 дні (днів) |
Мінімальне замовлення: 1005 шт В кошику од. на суму грн. | |||||||||||||||||
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TLE49613KXTSA1 | Infineon Technologies |
Description: MAGNETIC SWITCH LATCH |
товару немає в наявності |
Мінімальне замовлення: 847 шт В кошику од. на суму грн. | ||||||||||||||||
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TLE49613MXTMA1 | Infineon Technologies |
Description: MAGNETIC SWITCH LATCH SOT23-3Qualification: AEC-Q100 Grade: Automotive Test Condition: 25°C Supplier Device Package: PG-SOT23-3-15 Current - Supply (Max): 2.5mA Current - Output (Max): 25mA Sensing Range: 10.4mT Trip, -10.4mT Release Technology: Hall Effect Voltage - Supply: 3V ~ 32V Operating Temperature: -40°C ~ 170°C (TJ) Function: Latch Mounting Type: Surface Mount Polarization: South Pole Output Type: Open Drain Package / Case: TO-236-3, SC-59, SOT-23-3 Features: Temperature Compensated Packaging: Cut Tape (CT) |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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IDL12G65C5XUMA2 | Infineon Technologies |
Description: DIODE SIL CARB 650V 12A PGVSON4Packaging: Tape & Reel (TR) Package / Case: 4-PowerTSFN Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 360pF @ 1V, 1MHz Current - Average Rectified (Io): 12A Supplier Device Package: PG-VSON-4 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 12 A Current - Reverse Leakage @ Vr: 190 µA @ 650 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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BTS700201ESPXUMA1 | Infineon Technologies |
Description: PROFET PG-TSDSO-24Packaging: Tape & Reel (TR) Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: Logic Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: High Side Rds On (Typ): 2.3mOhm Input Type: Non-Inverting Voltage - Load: 6V ~ 18V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 23.3A Ratio - Input:Output: 1:1 Supplier Device Package: PG-TSDSO-24 Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO Grade: Automotive Part Status: Last Time Buy Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BTS700151ESPXUMA1 | Infineon Technologies |
Description: PROFET PG-TSDSO-24Packaging: Tape & Reel (TR) Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: Logic Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: High Side Rds On (Typ): 1.7mOhm Input Type: Non-Inverting Voltage - Load: 6V ~ 18V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 27.6A Ratio - Input:Output: 1:1 Supplier Device Package: PG-TSDSO-24 Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage, Reverse Current, UVLO Part Status: Last Time Buy |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
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BTS700151ESPXUMA1 | Infineon Technologies |
Description: PROFET PG-TSDSO-24Packaging: Cut Tape (CT) Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: Logic Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: High Side Rds On (Typ): 1.7mOhm Input Type: Non-Inverting Voltage - Load: 6V ~ 18V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 27.6A Ratio - Input:Output: 1:1 Supplier Device Package: PG-TSDSO-24 Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage, Reverse Current, UVLO Part Status: Last Time Buy |
на замовлення 6 шт: термін постачання 21-31 дні (днів) |
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BTS70302EPADAUGHBRDTOBO1 | Infineon Technologies |
Description: PROFET +2 12V BTS7030-2EPA DAUGHPackaging: Box Function: Switch Type: Power Management Contents: Board(s) Utilized IC / Part: BTS7030-2EPA Part Status: Active |
на замовлення 3 шт: термін постачання 21-31 дні (днів) |
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SHIELDBTS70802EPZTOBO1 | Infineon Technologies |
Description: PROFET+2 12V GRADE0 BTS7080-2EPPackaging: Bulk Function: Switch Type: Power Management Contents: Board(s) Utilized IC / Part: BTS7080-2EPZ Part Status: Active |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
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IAUS300N08S5N011TATMA1 | Infineon Technologies |
Description: MOSFET N-CH 80V 300A HDSOP-16-2Packaging: Tape & Reel (TR) Package / Case: 16-PowerSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 300A (Tj) Rds On (Max) @ Id, Vgs: 1.1mOhm @ 100A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 275µA Supplier Device Package: PG-HDSOP-16-2 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 231 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 16250 pF @ 40 V Qualification: AEC-Q101 |
на замовлення 3600 шт: термін постачання 21-31 дні (днів) |
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CY8C20336H-24LQXI | Infineon Technologies |
Description: IC PSOC CAPSENSE 24MHZ 24QFNProgram Memory Type: FLASH (8kB) Controller Series: CY8C20xx6 DigiKey Programmable: Not Verified Number of I/O: 20 Supplier Device Package: 24-QFN (4x4) Core Processor: M8C Applications: Capacitive Sensing Voltage - Supply: 1.71V ~ 5.5V Operating Temperature: -40°C ~ 85°C RAM Size: 1K x 8 Interface: I2C, SPI Mounting Type: Surface Mount Package / Case: 24-UFQFN Exposed Pad Packaging: Tray |
на замовлення 8677 шт: термін постачання 21-31 дні (днів) |
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IPD90N06S404ATMA2 | Infineon Technologies |
Description: MOSFET N-CH 60V 90A TO252-31Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 3.8mOhm @ 90A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 4V @ 90µA Supplier Device Package: PG-TO252-3-11 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10400 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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IPD90N06S4L03ATMA2 | Infineon Technologies |
Description: MOSFET N-CH 60V 90A TO252-31Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 90A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 90µA Supplier Device Package: PG-TO252-3-11 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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IPB90N06S4L04ATMA2 | Infineon Technologies |
Description: MOSFET N-CH 60V 90A TO263-3Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 3.7mOhm @ 90A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 90µA Supplier Device Package: PG-TO263-3-2 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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IKW40N120CS7XKSA1 | Infineon Technologies |
Description: IGBT TRENCH FS 1200V 82A TO247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 175 ns Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A Supplier Device Package: PG-TO247-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 27ns/190ns Switching Energy: 2.55mJ (on), 1.75mJ (off) Test Condition: 600V, 40A, 4Ohm, 15V Gate Charge: 230 nC Part Status: Active Current - Collector (Ic) (Max): 82 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 120 A Power - Max: 357 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BSO040N03MSGXUMA1 | Infineon Technologies |
Description: MOSFET N-CH 30V 16A 8DSOPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Ta) Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V Power Dissipation (Max): 1.56W (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PG-DSO-8 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IKWH60N65WR6XKSA1 | Infineon Technologies |
Description: IGBT TRENCH FS 650V 100A TO247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 60A Supplier Device Package: PG-TO247-3-32 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 35ns/311ns Switching Energy: 1.82mJ (on), 850µJ (off) Test Condition: 400V, 60A, 15Ohm, 15V Gate Charge: 174 nC Part Status: Active Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 180 A Power - Max: 240 W |
на замовлення 170 шт: термін постачання 21-31 дні (днів) |
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FS75R12W2T4BOMA1 | Infineon Technologies |
Description: IGBT MOD 1200V 107A 375WOperating Temperature: -40°C ~ 150°C Configuration: Full Bridge Input: Standard Mounting Type: Chassis Mount Package / Case: Module Packaging: Tray Input Capacitance (Cies) @ Vce: 4.3 nF @ 25 V Current - Collector Cutoff (Max): 1 mA Power - Max: 375 W Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 107 A Part Status: Active IGBT Type: Trench Field Stop Supplier Device Package: Module NTC Thermistor: Yes Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A |
на замовлення 8 шт: термін постачання 21-31 дні (днів) |
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BC847BE6327 | Infineon Technologies |
Description: BIPOLAR GEN PURPOSE TRANSISTOR |
на замовлення 65228 шт: термін постачання 21-31 дні (днів) |
Мінімальне замовлення: 15000 шт В кошику од. на суму грн. | ||||||||||||||||
| IM240M6Y2BAKSA1 | Infineon Technologies |
Description: IGBT IPM 600V 4A 23-DIP MODVoltage: 600 V Current: 4 A Part Status: Obsolete Voltage - Isolation: 1900Vrms Configuration: 3 Phase Inverter Type: IGBT Mounting Type: Through Hole Package / Case: 23-DIP Module (0.573", 14.55mm) Packaging: Tube |
товару немає в наявності |
Мінімальне замовлення: 15 шт В кошику од. на суму грн. | |||||||||||||||||
| PX8897EDQGR2ER1240AXUMA1 | Infineon Technologies | Description: IC REGULATOR PG-VQFN-48-2 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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IPDD60R045CFD7XTMA1 | Infineon Technologies |
Description: MOSFET N-CH 600V 61A HDSOP-10Current - Continuous Drain (Id) @ 25°C: 61A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 10-PowerSOP Module Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 3194 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Part Status: Active Supplier Device Package: PG-HDSOP-10-1 Vgs(th) (Max) @ Id: 4.5V @ 900µA Power Dissipation (Max): 379W (Tc) Rds On (Max) @ Id, Vgs: 45mOhm @ 18A, 10V |
на замовлення 1680 шт: термін постачання 21-31 дні (днів) |
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IM535U6DXKMA1 | Infineon Technologies |
Description: IM535U6DXKMA1Voltage: 600 V Current: 30 A Part Status: Active Voltage - Isolation: 2000Vrms Configuration: 3 Phase Type: IGBT Mounting Type: Through Hole Packaging: Tube |
на замовлення 529 шт: термін постачання 21-31 дні (днів) |
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IRF6612TR1 | Infineon Technologies |
Description: MOSFET N-CH 30V 24A DIRECTFET |
товару немає в наявності |
Мінімальне замовлення: 4800 шт В кошику од. на суму грн. | ||||||||||||||||
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IRF6612TR1 | Infineon Technologies |
Description: MOSFET N-CH 30V 24A DIRECTFET |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IKW15N120CS7XKSA1 | Infineon Technologies |
Description: IGBT TRENCH FS 1200V 36A TO247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 135 ns Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A Supplier Device Package: PG-TO247-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 23ns/170ns Switching Energy: 750µJ (on), 700µJ (off) Test Condition: 600V, 15A, 10Ohm, 15V Gate Charge: 95 nC Part Status: Active Current - Collector (Ic) (Max): 36 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 45 A Power - Max: 176 W |
на замовлення 267 шт: термін постачання 21-31 дні (днів) |
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REFTWILD8150E60V1ATOBO1 | Infineon Technologies |
Description: EVAL BOARD FOR ILD8150EPackaging: Bulk Features: Dimmable Voltage - Output: 10V ~ 56V Voltage - Input: 16V ~ 70V Current - Output / Channel: 1.05A Utilized IC / Part: ILD8150E Supplied Contents: Board(s) Outputs and Type: 2 Non-Isolated Outputs Part Status: Active Contents: Board(s) |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
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IAUC80N04S6N036ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 40V 80A 8TDFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 3.68mOhm @ 40A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 3V @ 18µA Supplier Device Package: PG-TDSON-8 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1338 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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IAUC80N04S6N036ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 40V 80A 8TDFNPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 3.68mOhm @ 40A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 3V @ 18µA Supplier Device Package: PG-TDSON-8 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1338 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 12399 шт: термін постачання 21-31 дні (днів) |
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IAUC80N04S6L032ATMA1 | Infineon Technologies |
Description: IAUC80N04S6L032ATMA1Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 3.29mOhm @ 40A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 2V @ 18µA Supplier Device Package: PG-TDSON-8 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1515 pF @ 25 V Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||||
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IAUC80N04S6L032ATMA1 | Infineon Technologies |
Description: IAUC80N04S6L032ATMA1Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 3.29mOhm @ 40A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 2V @ 18µA Supplier Device Package: PG-TDSON-8 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1515 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 180 шт: термін постачання 21-31 дні (днів) |
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T1080N04TOFXPSA1 | Infineon Technologies |
Description: SCR MODULE 600V 2000A DO-200ABPackaging: Bulk Package / Case: DO-200AA, A-PUK Mounting Type: Clamp On Operating Temperature: -40°C ~ 140°C Structure: Single Current - Hold (Ih) (Max): 200 mA Current - Gate Trigger (Igt) (Max): 200 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 16000A @ 50Hz Number of SCRs, Diodes: 1 SCR Current - On State (It (AV)) (Max): 1078 A Voltage - Gate Trigger (Vgt) (Max): 2 V Part Status: Obsolete Current - On State (It (RMS)) (Max): 2000 A Voltage - Off State: 600 V |
на замовлення 6 шт: термін постачання 21-31 дні (днів) |
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IAUS260N10S5N019TATMA1 | Infineon Technologies |
Description: MOSFET N-CH 100V 260A HDSOP-16-2Packaging: Tape & Reel (TR) Package / Case: 16-PowerSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 260A (Tj) Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 210µA Supplier Device Package: PG-HDSOP-16-2 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11830 pF @ 50 V Qualification: AEC-Q101 |
на замовлення 3600 шт: термін постачання 21-31 дні (днів) |
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IAUS260N10S5N019TATMA1 | Infineon Technologies |
Description: MOSFET N-CH 100V 260A HDSOP-16-2Packaging: Cut Tape (CT) Package / Case: 16-PowerSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 260A (Tj) Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 210µA Supplier Device Package: PG-HDSOP-16-2 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11830 pF @ 50 V Qualification: AEC-Q101 |
на замовлення 4011 шт: термін постачання 21-31 дні (днів) |
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IPD60N10S412ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 100V 60A TO252-3Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 12.2mOhm @ 60A, 10V Power Dissipation (Max): 94W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 46µA Supplier Device Package: PG-TO252-3-313 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2470 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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IPD60N10S412ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 100V 60A TO252-3Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 12.2mOhm @ 60A, 10V Power Dissipation (Max): 94W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 46µA Supplier Device Package: PG-TO252-3-313 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2470 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 3827 шт: термін постачання 21-31 дні (днів) |
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| IRGC49B120UB | Infineon Technologies |
Description: IGBT CHIPVoltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 50 A Part Status: Obsolete IGBT Type: NPT Supplier Device Package: Die Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 10A Input Type: Standard Mounting Type: Surface Mount Package / Case: Die Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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CY88155PFT-G-110-JN-EFE1 | Infineon Technologies |
Description: IC FANOUT BUFFER 8TSSOPPackaging: Tape & Reel (TR) Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Output: CMOS Frequency - Max: 25MHz Type: Fanout Buffer (Distribution), Spread Spectrum Clock Generator Input: Crystal Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3V ~ 3.6V Ratio - Input:Output: 1:2 Differential - Input:Output: No/No Supplier Device Package: 8-TSSOP PLL: Yes with Bypass Divider/Multiplier: No/Yes Part Status: Obsolete Number of Circuits: 1 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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CY88155PFT-G-110-JN-ERE1 | Infineon Technologies |
Description: IC FANOUT BUFFER 8TSSOPPackaging: Tape & Reel (TR) Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Output: CMOS Frequency - Max: 25MHz Type: Fanout Buffer (Distribution), Spread Spectrum Clock Generator Input: Crystal Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3V ~ 3.6V Ratio - Input:Output: 1:2 Differential - Input:Output: No/No Supplier Device Package: 8-TSSOP PLL: Yes with Bypass Divider/Multiplier: No/Yes Part Status: Obsolete Number of Circuits: 1 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| MB95F118ASPMT-G-110SPE1 | Infineon Technologies |
Description: IC MCU Packaging: Bulk Part Status: Obsolete DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| PX8746JDNG029XTMA1 | Infineon Technologies | Description: LED PX8746JDNG029XTMA1 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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IPP019N08NF2SAKMA1 | Infineon Technologies |
Description: TRENCH 40<-<100VPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 191A (Tc) Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V Power Dissipation (Max): 3.8W (Ta), 250W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 194µA Supplier Device Package: PG-TO220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 186 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8700 pF @ 40 V |
на замовлення 1327 шт: термін постачання 21-31 дні (днів) |
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IPP65R110CFD7XKSA1 | Infineon Technologies |
Description: HIGH POWER_NEWPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 9.7A, 10V Power Dissipation (Max): 114W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 480µA Supplier Device Package: PG-TO220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1942 pF @ 400 V |
товару немає в наявності |
В кошику од. на суму грн. |
| AUIRLL024ZTR |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 5A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 3A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-223
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 55V 5A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 3A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-223
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| FS10R12VT3BOMA1 |
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Виробник: Infineon Technologies
Description: IGBT MODULE 1200V 16A 64W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 10A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 64 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 700 pF @ 25 V
Description: IGBT MODULE 1200V 16A 64W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 10A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 64 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 700 pF @ 25 V
на замовлення 118 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 1424.67 грн |
| IRU3012CW |
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Виробник: Infineon Technologies
Description: IC REG BUCK 20SOIC
Mounting Type: Surface Mount
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Packaging: Tube
Part Status: Obsolete
Supplier Device Package: 20-SOIC
Description: IC REG BUCK 20SOIC
Mounting Type: Surface Mount
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Packaging: Tube
Part Status: Obsolete
Supplier Device Package: 20-SOIC
товару немає в наявності
Мінімальне замовлення: 38 шт
В кошику
од. на суму грн.
| FF400R12KT3EHOSA1 |
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Виробник: Infineon Technologies
Description: IGBT MOD 1200V 580A 2000W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 400A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 580 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 2000 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 28 nF @ 25 V
Description: IGBT MOD 1200V 580A 2000W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 400A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 580 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 2000 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 28 nF @ 25 V
на замовлення 193 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 11054.83 грн |
| FF400R12KT3PEHOSA1 |
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Виробник: Infineon Technologies
Description: IGBT MODULE 1200V 400A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 400A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 400 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 28 nF @ 25 V
Description: IGBT MODULE 1200V 400A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 400A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 400 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 28 nF @ 25 V
на замовлення 80 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 11424.85 грн |
| CY7C1314KV18-250BZC |
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Виробник: Infineon Technologies
Description: IC SRAM 18MBIT PARALLEL 165FBGA
Description: IC SRAM 18MBIT PARALLEL 165FBGA
на замовлення 116 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 694.32 грн |
| TLE42994GMXUMA3 |
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Виробник: Infineon Technologies
Description: IC REG LINEAR 5V 150MA PG-DSO-14
Qualification: AEC-Q100
Grade: Automotive
Current - Supply (Max): 2 mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Voltage Dropout (Max): 0.5V @ 100mA
PSRR: 66dB (100Hz)
Part Status: Active
Control Features: Enable, Reset
Voltage - Output (Min/Fixed): 5V
Supplier Device Package: PG-DSO-14
Number of Regulators: 1
Voltage - Input (Max): 45V
Current - Quiescent (Iq): 1 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output: 150mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: IC REG LINEAR 5V 150MA PG-DSO-14
Qualification: AEC-Q100
Grade: Automotive
Current - Supply (Max): 2 mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Voltage Dropout (Max): 0.5V @ 100mA
PSRR: 66dB (100Hz)
Part Status: Active
Control Features: Enable, Reset
Voltage - Output (Min/Fixed): 5V
Supplier Device Package: PG-DSO-14
Number of Regulators: 1
Voltage - Input (Max): 45V
Current - Quiescent (Iq): 1 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output: 150mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 57.14 грн |
| TLE42994GMXUMA3 |
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Виробник: Infineon Technologies
Description: IC REG LINEAR 5V 150MA PG-DSO-14
Current - Supply (Max): 2 mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Voltage Dropout (Max): 0.5V @ 100mA
PSRR: 66dB (100Hz)
Part Status: Active
Qualification: AEC-Q100
Grade: Automotive
Control Features: Enable, Reset
Voltage - Output (Min/Fixed): 5V
Supplier Device Package: PG-DSO-14
Number of Regulators: 1
Voltage - Input (Max): 45V
Current - Quiescent (Iq): 1 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output: 150mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: IC REG LINEAR 5V 150MA PG-DSO-14
Current - Supply (Max): 2 mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Voltage Dropout (Max): 0.5V @ 100mA
PSRR: 66dB (100Hz)
Part Status: Active
Qualification: AEC-Q100
Grade: Automotive
Control Features: Enable, Reset
Voltage - Output (Min/Fixed): 5V
Supplier Device Package: PG-DSO-14
Number of Regulators: 1
Voltage - Input (Max): 45V
Current - Quiescent (Iq): 1 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output: 150mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
на замовлення 4286 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 113.91 грн |
| 10+ | 80.67 грн |
| 25+ | 73.28 грн |
| 100+ | 61.16 грн |
| 250+ | 57.53 грн |
| 500+ | 55.34 грн |
| 1000+ | 54.09 грн |
| IPB051NE8NG |
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Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Description: N-CHANNEL POWER MOSFET
на замовлення 775 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 198+ | 110.99 грн |
| IPB051NE8NGATMA1 |
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Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Description: N-CHANNEL POWER MOSFET
товару немає в наявності
В кошику
од. на суму грн.
| BTN70301EPAXUMA1 |
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Виробник: Infineon Technologies
Description: IC HALF BRIDGE DRVR 7A TSDSO-14
Packaging: Tape & Reel (TR)
Features: Diagnostic Enable, Enable, SENSE
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 6V ~ 18V
Rds On (Typ): 20mOhm LS, 12mOhm HS
Applications: DC Motors, General Purpose
Current - Output / Channel: 7A
Current - Peak Output: 17A
Technology: SMART7
Supplier Device Package: PG-TSDSO-14
Fault Protection: Current Limiting, Over Current, Over Temperature, Over Voltage, Short Circuit
Load Type: Inductive
Part Status: Active
Description: IC HALF BRIDGE DRVR 7A TSDSO-14
Packaging: Tape & Reel (TR)
Features: Diagnostic Enable, Enable, SENSE
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 6V ~ 18V
Rds On (Typ): 20mOhm LS, 12mOhm HS
Applications: DC Motors, General Purpose
Current - Output / Channel: 7A
Current - Peak Output: 17A
Technology: SMART7
Supplier Device Package: PG-TSDSO-14
Fault Protection: Current Limiting, Over Current, Over Temperature, Over Voltage, Short Circuit
Load Type: Inductive
Part Status: Active
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| BTN70301EPAXUMA1 |
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Виробник: Infineon Technologies
Description: IC HALF BRIDGE DRVR 7A TSDSO-14
Packaging: Cut Tape (CT)
Features: Diagnostic Enable, Enable, SENSE
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 6V ~ 18V
Rds On (Typ): 20mOhm LS, 12mOhm HS
Applications: DC Motors, General Purpose
Current - Output / Channel: 7A
Current - Peak Output: 17A
Technology: SMART7
Supplier Device Package: PG-TSDSO-14
Fault Protection: Current Limiting, Over Current, Over Temperature, Over Voltage, Short Circuit
Load Type: Inductive
Part Status: Active
Description: IC HALF BRIDGE DRVR 7A TSDSO-14
Packaging: Cut Tape (CT)
Features: Diagnostic Enable, Enable, SENSE
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 6V ~ 18V
Rds On (Typ): 20mOhm LS, 12mOhm HS
Applications: DC Motors, General Purpose
Current - Output / Channel: 7A
Current - Peak Output: 17A
Technology: SMART7
Supplier Device Package: PG-TSDSO-14
Fault Protection: Current Limiting, Over Current, Over Temperature, Over Voltage, Short Circuit
Load Type: Inductive
Part Status: Active
на замовлення 2729 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 186.75 грн |
| 10+ | 133.94 грн |
| 25+ | 122.50 грн |
| 100+ | 103.14 грн |
| 250+ | 97.50 грн |
| 500+ | 95.36 грн |
| TLE7237SLXUMA2 |
Виробник: Infineon Technologies
Description: IC DRIVER SPI RELAY CTRL 24SSOP
Description: IC DRIVER SPI RELAY CTRL 24SSOP
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| BTS612N1E3128ABUMA1 |
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Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 TO263-7
Part Status: Not For New Designs
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, UVLO
Supplier Device Package: PG-TO263-7-2
Ratio - Input:Output: 1:1
Current - Output (Max): 3.5A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 5V ~ 34V
Input Type: Non-Inverting
Rds On (Typ): 160mOhm
Output Configuration: High Side
Operating Temperature: -40°C ~ 150°C (TJ)
Switch Type: General Purpose
Interface: Parallel
Number of Outputs: 2
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Features: Auto Restart, Status Flag
Packaging: Tape & Reel (TR)
Description: IC PWR SWITCH N-CHAN 1:1 TO263-7
Part Status: Not For New Designs
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, UVLO
Supplier Device Package: PG-TO263-7-2
Ratio - Input:Output: 1:1
Current - Output (Max): 3.5A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 5V ~ 34V
Input Type: Non-Inverting
Rds On (Typ): 160mOhm
Output Configuration: High Side
Operating Temperature: -40°C ~ 150°C (TJ)
Switch Type: General Purpose
Interface: Parallel
Number of Outputs: 2
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Features: Auto Restart, Status Flag
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| TLV4961-3M |
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Виробник: Infineon Technologies
Description: TLV4961 - HALL SWITCH
Description: TLV4961 - HALL SWITCH
на замовлення 180000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1508+ | 14.73 грн |
| TLE4961-3K |
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Виробник: Infineon Technologies
Description: TLE4961 - HALL SWITCH
Description: TLE4961 - HALL SWITCH
на замовлення 333000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1016+ | 22.10 грн |
| TLV49613TBXALA1 |
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Виробник: Infineon Technologies
Description: MAGNETIC SWITCH LATCH TO92S
Description: MAGNETIC SWITCH LATCH TO92S
на замовлення 34000 шт:
термін постачання 21-31 дні (днів)
| TLE49613KXTSA1 |
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Виробник: Infineon Technologies
Description: MAGNETIC SWITCH LATCH
Description: MAGNETIC SWITCH LATCH
товару немає в наявності
Мінімальне замовлення: 847 шт
В кошику
од. на суму грн.
| TLE49613MXTMA1 |
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Виробник: Infineon Technologies
Description: MAGNETIC SWITCH LATCH SOT23-3
Qualification: AEC-Q100
Grade: Automotive
Test Condition: 25°C
Supplier Device Package: PG-SOT23-3-15
Current - Supply (Max): 2.5mA
Current - Output (Max): 25mA
Sensing Range: 10.4mT Trip, -10.4mT Release
Technology: Hall Effect
Voltage - Supply: 3V ~ 32V
Operating Temperature: -40°C ~ 170°C (TJ)
Function: Latch
Mounting Type: Surface Mount
Polarization: South Pole
Output Type: Open Drain
Package / Case: TO-236-3, SC-59, SOT-23-3
Features: Temperature Compensated
Packaging: Cut Tape (CT)
Description: MAGNETIC SWITCH LATCH SOT23-3
Qualification: AEC-Q100
Grade: Automotive
Test Condition: 25°C
Supplier Device Package: PG-SOT23-3-15
Current - Supply (Max): 2.5mA
Current - Output (Max): 25mA
Sensing Range: 10.4mT Trip, -10.4mT Release
Technology: Hall Effect
Voltage - Supply: 3V ~ 32V
Operating Temperature: -40°C ~ 170°C (TJ)
Function: Latch
Mounting Type: Surface Mount
Polarization: South Pole
Output Type: Open Drain
Package / Case: TO-236-3, SC-59, SOT-23-3
Features: Temperature Compensated
Packaging: Cut Tape (CT)
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 58.12 грн |
| 10+ | 42.46 грн |
| 25+ | 36.62 грн |
| 50+ | 33.14 грн |
| 100+ | 28.23 грн |
| 500+ | 24.54 грн |
| 1000+ | 21.12 грн |
| 5000+ | 18.71 грн |
| IDL12G65C5XUMA2 |
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Виробник: Infineon Technologies
Description: DIODE SIL CARB 650V 12A PGVSON4
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 360pF @ 1V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: PG-VSON-4
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 12 A
Current - Reverse Leakage @ Vr: 190 µA @ 650 V
Description: DIODE SIL CARB 650V 12A PGVSON4
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 360pF @ 1V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: PG-VSON-4
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 12 A
Current - Reverse Leakage @ Vr: 190 µA @ 650 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 115.66 грн |
| BTS700201ESPXUMA1 |
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Виробник: Infineon Technologies
Description: PROFET PG-TSDSO-24
Packaging: Tape & Reel (TR)
Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: Logic
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 2.3mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 18V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 23.3A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-24
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO
Grade: Automotive
Part Status: Last Time Buy
Qualification: AEC-Q100
Description: PROFET PG-TSDSO-24
Packaging: Tape & Reel (TR)
Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: Logic
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 2.3mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 18V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 23.3A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-24
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO
Grade: Automotive
Part Status: Last Time Buy
Qualification: AEC-Q100
товару немає в наявності
В кошику
од. на суму грн.
| BTS700151ESPXUMA1 |
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Виробник: Infineon Technologies
Description: PROFET PG-TSDSO-24
Packaging: Tape & Reel (TR)
Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: Logic
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 1.7mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 18V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 27.6A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-24
Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage, Reverse Current, UVLO
Part Status: Last Time Buy
Description: PROFET PG-TSDSO-24
Packaging: Tape & Reel (TR)
Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: Logic
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 1.7mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 18V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 27.6A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-24
Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage, Reverse Current, UVLO
Part Status: Last Time Buy
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| BTS700151ESPXUMA1 |
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Виробник: Infineon Technologies
Description: PROFET PG-TSDSO-24
Packaging: Cut Tape (CT)
Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: Logic
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 1.7mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 18V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 27.6A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-24
Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage, Reverse Current, UVLO
Part Status: Last Time Buy
Description: PROFET PG-TSDSO-24
Packaging: Cut Tape (CT)
Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: Logic
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 1.7mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 18V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 27.6A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-24
Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage, Reverse Current, UVLO
Part Status: Last Time Buy
на замовлення 6 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 351.81 грн |
| BTS70302EPADAUGHBRDTOBO1 |
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Виробник: Infineon Technologies
Description: PROFET +2 12V BTS7030-2EPA DAUGH
Packaging: Box
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTS7030-2EPA
Part Status: Active
Description: PROFET +2 12V BTS7030-2EPA DAUGH
Packaging: Box
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTS7030-2EPA
Part Status: Active
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 3486.31 грн |
| SHIELDBTS70802EPZTOBO1 |
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Виробник: Infineon Technologies
Description: PROFET+2 12V GRADE0 BTS7080-2EP
Packaging: Bulk
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTS7080-2EPZ
Part Status: Active
Description: PROFET+2 12V GRADE0 BTS7080-2EP
Packaging: Bulk
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTS7080-2EPZ
Part Status: Active
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 7040.04 грн |
| IAUS300N08S5N011TATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 80V 300A HDSOP-16-2
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tj)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 275µA
Supplier Device Package: PG-HDSOP-16-2
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 231 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16250 pF @ 40 V
Qualification: AEC-Q101
Description: MOSFET N-CH 80V 300A HDSOP-16-2
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tj)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 275µA
Supplier Device Package: PG-HDSOP-16-2
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 231 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16250 pF @ 40 V
Qualification: AEC-Q101
на замовлення 3600 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1800+ | 196.51 грн |
| CY8C20336H-24LQXI |
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Виробник: Infineon Technologies
Description: IC PSOC CAPSENSE 24MHZ 24QFN
Program Memory Type: FLASH (8kB)
Controller Series: CY8C20xx6
DigiKey Programmable: Not Verified
Number of I/O: 20
Supplier Device Package: 24-QFN (4x4)
Core Processor: M8C
Applications: Capacitive Sensing
Voltage - Supply: 1.71V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
RAM Size: 1K x 8
Interface: I2C, SPI
Mounting Type: Surface Mount
Package / Case: 24-UFQFN Exposed Pad
Packaging: Tray
Description: IC PSOC CAPSENSE 24MHZ 24QFN
Program Memory Type: FLASH (8kB)
Controller Series: CY8C20xx6
DigiKey Programmable: Not Verified
Number of I/O: 20
Supplier Device Package: 24-QFN (4x4)
Core Processor: M8C
Applications: Capacitive Sensing
Voltage - Supply: 1.71V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
RAM Size: 1K x 8
Interface: I2C, SPI
Mounting Type: Surface Mount
Package / Case: 24-UFQFN Exposed Pad
Packaging: Tray
на замовлення 8677 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 113+ | 191.05 грн |
| IPD90N06S404ATMA2 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 90A TO252-31
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 90A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TO252-3-11
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10400 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 90A TO252-31
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 90A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TO252-3-11
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10400 pF @ 25 V
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 50.90 грн |
| IPD90N06S4L03ATMA2 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 90A TO252-31
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 90A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 90µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 90A TO252-31
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 90A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 90µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 52.46 грн |
| IPB90N06S4L04ATMA2 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 90A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 90A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 90µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 90A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 90A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 90µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1000+ | 67.72 грн |
| IKW40N120CS7XKSA1 |
![]() |
Виробник: Infineon Technologies
Description: IGBT TRENCH FS 1200V 82A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 175 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 27ns/190ns
Switching Energy: 2.55mJ (on), 1.75mJ (off)
Test Condition: 600V, 40A, 4Ohm, 15V
Gate Charge: 230 nC
Part Status: Active
Current - Collector (Ic) (Max): 82 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 357 W
Description: IGBT TRENCH FS 1200V 82A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 175 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 27ns/190ns
Switching Energy: 2.55mJ (on), 1.75mJ (off)
Test Condition: 600V, 40A, 4Ohm, 15V
Gate Charge: 230 nC
Part Status: Active
Current - Collector (Ic) (Max): 82 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 357 W
товару немає в наявності
В кошику
од. на суму грн.
| BSO040N03MSGXUMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 16A 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-DSO-8
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 15 V
Description: MOSFET N-CH 30V 16A 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-DSO-8
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 15 V
товару немає в наявності
В кошику
од. на суму грн.
| IKWH60N65WR6XKSA1 |
![]() |
Виробник: Infineon Technologies
Description: IGBT TRENCH FS 650V 100A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 60A
Supplier Device Package: PG-TO247-3-32
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 35ns/311ns
Switching Energy: 1.82mJ (on), 850µJ (off)
Test Condition: 400V, 60A, 15Ohm, 15V
Gate Charge: 174 nC
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 240 W
Description: IGBT TRENCH FS 650V 100A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 60A
Supplier Device Package: PG-TO247-3-32
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 35ns/311ns
Switching Energy: 1.82mJ (on), 850µJ (off)
Test Condition: 400V, 60A, 15Ohm, 15V
Gate Charge: 174 nC
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 240 W
на замовлення 170 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 344.83 грн |
| 30+ | 186.18 грн |
| 120+ | 153.94 грн |
| FS75R12W2T4BOMA1 |
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Виробник: Infineon Technologies
Description: IGBT MOD 1200V 107A 375W
Operating Temperature: -40°C ~ 150°C
Configuration: Full Bridge
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Input Capacitance (Cies) @ Vce: 4.3 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 375 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 107 A
Part Status: Active
IGBT Type: Trench Field Stop
Supplier Device Package: Module
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
Description: IGBT MOD 1200V 107A 375W
Operating Temperature: -40°C ~ 150°C
Configuration: Full Bridge
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Input Capacitance (Cies) @ Vce: 4.3 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 375 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 107 A
Part Status: Active
IGBT Type: Trench Field Stop
Supplier Device Package: Module
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
на замовлення 8 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 3905.53 грн |
| BC847BE6327 |
![]() |
Виробник: Infineon Technologies
Description: BIPOLAR GEN PURPOSE TRANSISTOR
Description: BIPOLAR GEN PURPOSE TRANSISTOR
на замовлення 65228 шт:
термін постачання 21-31 дні (днів)
| IM240M6Y2BAKSA1 |
![]() |
Виробник: Infineon Technologies
Description: IGBT IPM 600V 4A 23-DIP MOD
Voltage: 600 V
Current: 4 A
Part Status: Obsolete
Voltage - Isolation: 1900Vrms
Configuration: 3 Phase Inverter
Type: IGBT
Mounting Type: Through Hole
Package / Case: 23-DIP Module (0.573", 14.55mm)
Packaging: Tube
Description: IGBT IPM 600V 4A 23-DIP MOD
Voltage: 600 V
Current: 4 A
Part Status: Obsolete
Voltage - Isolation: 1900Vrms
Configuration: 3 Phase Inverter
Type: IGBT
Mounting Type: Through Hole
Package / Case: 23-DIP Module (0.573", 14.55mm)
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 15 шт
В кошику
од. на суму грн.
| PX8897EDQGR2ER1240AXUMA1 |
Виробник: Infineon Technologies
Description: IC REGULATOR PG-VQFN-48-2
Description: IC REGULATOR PG-VQFN-48-2
товару немає в наявності
В кошику
од. на суму грн.
| IPDD60R045CFD7XTMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 61A HDSOP-10
Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 10-PowerSOP Module
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 3194 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: PG-HDSOP-10-1
Vgs(th) (Max) @ Id: 4.5V @ 900µA
Power Dissipation (Max): 379W (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 18A, 10V
Description: MOSFET N-CH 600V 61A HDSOP-10
Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 10-PowerSOP Module
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 3194 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: PG-HDSOP-10-1
Vgs(th) (Max) @ Id: 4.5V @ 900µA
Power Dissipation (Max): 379W (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 18A, 10V
на замовлення 1680 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 562.58 грн |
| 10+ | 393.18 грн |
| 100+ | 290.04 грн |
| 500+ | 238.89 грн |
| IM535U6DXKMA1 |
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Виробник: Infineon Technologies
Description: IM535U6DXKMA1
Voltage: 600 V
Current: 30 A
Part Status: Active
Voltage - Isolation: 2000Vrms
Configuration: 3 Phase
Type: IGBT
Mounting Type: Through Hole
Packaging: Tube
Description: IM535U6DXKMA1
Voltage: 600 V
Current: 30 A
Part Status: Active
Voltage - Isolation: 2000Vrms
Configuration: 3 Phase
Type: IGBT
Mounting Type: Through Hole
Packaging: Tube
на замовлення 529 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1300.30 грн |
| 14+ | 858.30 грн |
| 112+ | 701.86 грн |
| IRF6612TR1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 24A DIRECTFET
Description: MOSFET N-CH 30V 24A DIRECTFET
товару немає в наявності
Мінімальне замовлення: 4800 шт
В кошику
од. на суму грн.
| IRF6612TR1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 24A DIRECTFET
Description: MOSFET N-CH 30V 24A DIRECTFET
товару немає в наявності
В кошику
од. на суму грн.
| IKW15N120CS7XKSA1 |
![]() |
Виробник: Infineon Technologies
Description: IGBT TRENCH FS 1200V 36A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 135 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 23ns/170ns
Switching Energy: 750µJ (on), 700µJ (off)
Test Condition: 600V, 15A, 10Ohm, 15V
Gate Charge: 95 nC
Part Status: Active
Current - Collector (Ic) (Max): 36 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 176 W
Description: IGBT TRENCH FS 1200V 36A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 135 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 23ns/170ns
Switching Energy: 750µJ (on), 700µJ (off)
Test Condition: 600V, 15A, 10Ohm, 15V
Gate Charge: 95 nC
Part Status: Active
Current - Collector (Ic) (Max): 36 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 176 W
на замовлення 267 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 378.15 грн |
| 30+ | 204.66 грн |
| 120+ | 169.43 грн |
| REFTWILD8150E60V1ATOBO1 |
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Виробник: Infineon Technologies
Description: EVAL BOARD FOR ILD8150E
Packaging: Bulk
Features: Dimmable
Voltage - Output: 10V ~ 56V
Voltage - Input: 16V ~ 70V
Current - Output / Channel: 1.05A
Utilized IC / Part: ILD8150E
Supplied Contents: Board(s)
Outputs and Type: 2 Non-Isolated Outputs
Part Status: Active
Contents: Board(s)
Description: EVAL BOARD FOR ILD8150E
Packaging: Bulk
Features: Dimmable
Voltage - Output: 10V ~ 56V
Voltage - Input: 16V ~ 70V
Current - Output / Channel: 1.05A
Utilized IC / Part: ILD8150E
Supplied Contents: Board(s)
Outputs and Type: 2 Non-Isolated Outputs
Part Status: Active
Contents: Board(s)
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 5704.87 грн |
| IAUC80N04S6N036ATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 80A 8TDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.68mOhm @ 40A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 3V @ 18µA
Supplier Device Package: PG-TDSON-8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1338 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 80A 8TDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.68mOhm @ 40A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 3V @ 18µA
Supplier Device Package: PG-TDSON-8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1338 pF @ 25 V
Qualification: AEC-Q101
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 21.41 грн |
| 10000+ | 19.71 грн |
| IAUC80N04S6N036ATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 80A 8TDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.68mOhm @ 40A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 3V @ 18µA
Supplier Device Package: PG-TDSON-8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1338 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 80A 8TDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.68mOhm @ 40A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 3V @ 18µA
Supplier Device Package: PG-TDSON-8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1338 pF @ 25 V
Qualification: AEC-Q101
на замовлення 12399 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 89.89 грн |
| 10+ | 54.70 грн |
| 100+ | 36.21 грн |
| 500+ | 26.54 грн |
| 1000+ | 24.14 грн |
| 2000+ | 22.64 грн |
| IAUC80N04S6L032ATMA1 |
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Виробник: Infineon Technologies
Description: IAUC80N04S6L032ATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.29mOhm @ 40A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 2V @ 18µA
Supplier Device Package: PG-TDSON-8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1515 pF @ 25 V
Qualification: AEC-Q101
Description: IAUC80N04S6L032ATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.29mOhm @ 40A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 2V @ 18µA
Supplier Device Package: PG-TDSON-8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1515 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| IAUC80N04S6L032ATMA1 |
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Виробник: Infineon Technologies
Description: IAUC80N04S6L032ATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.29mOhm @ 40A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 2V @ 18µA
Supplier Device Package: PG-TDSON-8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1515 pF @ 25 V
Qualification: AEC-Q101
Description: IAUC80N04S6L032ATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.29mOhm @ 40A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 2V @ 18µA
Supplier Device Package: PG-TDSON-8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1515 pF @ 25 V
Qualification: AEC-Q101
на замовлення 180 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 98.41 грн |
| 10+ | 59.32 грн |
| 100+ | 39.31 грн |
| T1080N04TOFXPSA1 |
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Виробник: Infineon Technologies
Description: SCR MODULE 600V 2000A DO-200AB
Packaging: Bulk
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 140°C
Structure: Single
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 16000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 1078 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 2000 A
Voltage - Off State: 600 V
Description: SCR MODULE 600V 2000A DO-200AB
Packaging: Bulk
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 140°C
Structure: Single
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 16000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 1078 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 2000 A
Voltage - Off State: 600 V
на замовлення 6 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 6174.85 грн |
| IAUS260N10S5N019TATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 260A HDSOP-16-2
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 260A (Tj)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 210µA
Supplier Device Package: PG-HDSOP-16-2
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11830 pF @ 50 V
Qualification: AEC-Q101
Description: MOSFET N-CH 100V 260A HDSOP-16-2
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 260A (Tj)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 210µA
Supplier Device Package: PG-HDSOP-16-2
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11830 pF @ 50 V
Qualification: AEC-Q101
на замовлення 3600 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1800+ | 158.65 грн |
| IAUS260N10S5N019TATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 260A HDSOP-16-2
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 260A (Tj)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 210µA
Supplier Device Package: PG-HDSOP-16-2
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11830 pF @ 50 V
Qualification: AEC-Q101
Description: MOSFET N-CH 100V 260A HDSOP-16-2
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 260A (Tj)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 210µA
Supplier Device Package: PG-HDSOP-16-2
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11830 pF @ 50 V
Qualification: AEC-Q101
на замовлення 4011 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 436.27 грн |
| 10+ | 281.02 грн |
| 100+ | 202.54 грн |
| 500+ | 175.49 грн |
| IPD60N10S412ATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 60A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 12.2mOhm @ 60A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 46µA
Supplier Device Package: PG-TO252-3-313
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2470 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 100V 60A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 12.2mOhm @ 60A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 46µA
Supplier Device Package: PG-TO252-3-313
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2470 pF @ 25 V
Qualification: AEC-Q101
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 42.51 грн |
| IPD60N10S412ATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 60A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 12.2mOhm @ 60A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 46µA
Supplier Device Package: PG-TO252-3-313
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2470 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 100V 60A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 12.2mOhm @ 60A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 46µA
Supplier Device Package: PG-TO252-3-313
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2470 pF @ 25 V
Qualification: AEC-Q101
на замовлення 3827 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 149.56 грн |
| 10+ | 91.93 грн |
| 100+ | 62.21 грн |
| 500+ | 46.42 грн |
| 1000+ | 42.58 грн |
| IRGC49B120UB |
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Виробник: Infineon Technologies
Description: IGBT CHIP
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 50 A
Part Status: Obsolete
IGBT Type: NPT
Supplier Device Package: Die
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 10A
Input Type: Standard
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Description: IGBT CHIP
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 50 A
Part Status: Obsolete
IGBT Type: NPT
Supplier Device Package: Die
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 10A
Input Type: Standard
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
товару немає в наявності
В кошику
од. на суму грн.
| CY88155PFT-G-110-JN-EFE1 |
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Виробник: Infineon Technologies
Description: IC FANOUT BUFFER 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: CMOS
Frequency - Max: 25MHz
Type: Fanout Buffer (Distribution), Spread Spectrum Clock Generator
Input: Crystal
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Ratio - Input:Output: 1:2
Differential - Input:Output: No/No
Supplier Device Package: 8-TSSOP
PLL: Yes with Bypass
Divider/Multiplier: No/Yes
Part Status: Obsolete
Number of Circuits: 1
DigiKey Programmable: Not Verified
Description: IC FANOUT BUFFER 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: CMOS
Frequency - Max: 25MHz
Type: Fanout Buffer (Distribution), Spread Spectrum Clock Generator
Input: Crystal
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Ratio - Input:Output: 1:2
Differential - Input:Output: No/No
Supplier Device Package: 8-TSSOP
PLL: Yes with Bypass
Divider/Multiplier: No/Yes
Part Status: Obsolete
Number of Circuits: 1
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
| CY88155PFT-G-110-JN-ERE1 |
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Виробник: Infineon Technologies
Description: IC FANOUT BUFFER 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: CMOS
Frequency - Max: 25MHz
Type: Fanout Buffer (Distribution), Spread Spectrum Clock Generator
Input: Crystal
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Ratio - Input:Output: 1:2
Differential - Input:Output: No/No
Supplier Device Package: 8-TSSOP
PLL: Yes with Bypass
Divider/Multiplier: No/Yes
Part Status: Obsolete
Number of Circuits: 1
DigiKey Programmable: Not Verified
Description: IC FANOUT BUFFER 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: CMOS
Frequency - Max: 25MHz
Type: Fanout Buffer (Distribution), Spread Spectrum Clock Generator
Input: Crystal
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Ratio - Input:Output: 1:2
Differential - Input:Output: No/No
Supplier Device Package: 8-TSSOP
PLL: Yes with Bypass
Divider/Multiplier: No/Yes
Part Status: Obsolete
Number of Circuits: 1
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
| MB95F118ASPMT-G-110SPE1 |
Виробник: Infineon Technologies
Description: IC MCU
Packaging: Bulk
Part Status: Obsolete
DigiKey Programmable: Not Verified
Description: IC MCU
Packaging: Bulk
Part Status: Obsolete
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
| PX8746JDNG029XTMA1 |
Виробник: Infineon Technologies
Description: LED PX8746JDNG029XTMA1
Description: LED PX8746JDNG029XTMA1
товару немає в наявності
В кошику
од. на суму грн.
| IPP019N08NF2SAKMA1 |
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Виробник: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 191A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 194µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 186 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8700 pF @ 40 V
Description: TRENCH 40<-<100V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 191A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 194µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 186 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8700 pF @ 40 V
на замовлення 1327 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 283.62 грн |
| 50+ | 138.57 грн |
| 100+ | 125.57 грн |
| 500+ | 96.46 грн |
| 1000+ | 89.60 грн |
| IPP65R110CFD7XKSA1 |
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Виробник: Infineon Technologies
Description: HIGH POWER_NEW
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 9.7A, 10V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 480µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1942 pF @ 400 V
Description: HIGH POWER_NEW
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 9.7A, 10V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 480µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1942 pF @ 400 V
товару немає в наявності
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од. на суму грн.




































