Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (122990) > Сторінка 416 з 2050
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||
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| S72XS256RE0AHBH20 | Infineon Technologies |
Description: IC FLASH RAM 256MBIT PAR 133FBGAPackaging: Tray Package / Case: 133-VFBGA Mounting Type: Surface Mount Memory Size: 256Mbit (FLASH), 256Mbit (DDR DRAM) Memory Type: Non-Volatile, Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 1.95V Technology: FLASH, DRAM Clock Frequency: 108 MHz Memory Format: FLASH, RAM Supplier Device Package: 133-FBGA (8x8) Memory Interface: Parallel DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 2600 шт В кошику од. на суму грн. | |||||||||||||||
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AUIRB24427STR | Infineon Technologies |
Description: IC GATE DRVR LOW-SIDE 8SOICPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 5V ~ 20V Input Type: Non-Inverting Supplier Device Package: PG-DSO-8-9 Rise / Fall Time (Typ): 33ns, 33ns (Max) Channel Type: Independent Driven Configuration: Low-Side Number of Drivers: 2 Gate Type: MOSFET (N-Channel) Logic Voltage - VIL, VIH: 0.8V, 2.5V Current - Peak Output (Source, Sink): 6A, 6A DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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EVAL2101HBLLCTOBO1 | Infineon Technologies |
Description: EVAL BRD Packaging: Bulk Voltage - Output: 12V Voltage - Input: 350V ~ 425V Current - Output: 16.7A Board Type: Fully Populated Utilized IC / Part: 2ED2101S06F, 2ED24427N01F Supplied Contents: Board(s) Main Purpose: DC/DC Converter Outputs and Type: 1, Isolated Part Status: Active Power - Output: 200 W |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
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| SIDC03D60F6X7SA1 | Infineon Technologies |
Description: DIODE SWITCHING 600V WAFER |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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BGSA147ML10E6327XTSA1 | Infineon Technologies |
Description: IC RF SW SP4T 7.125GHZ TSLP10Packaging: Tape & Reel (TR) Package / Case: 10-XFQFN Mounting Type: Surface Mount Circuit: SP4T RF Type: General Purpose Voltage - Supply: 45V Frequency Range: 400MHz ~ 7.125GHz Topology: Reflective Supplier Device Package: PG-TSLP-10-3 |
товару немає в наявності |
Мінімальне замовлення: 7500 шт В кошику од. на суму грн. | ||||||||||||||
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IRFH7110TRPBF | Infineon Technologies |
Description: MOSFET N-CH 100V 11A/58A 8PQFNPackaging: Bulk Package / Case: 8-TQFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 58A (Tc) Rds On (Max) @ Id, Vgs: 13.5mOhm @ 35A, 10V Power Dissipation (Max): 3.6W (Ta), 104W (Tc) Vgs(th) (Max) @ Id: 4V @ 100µA Supplier Device Package: 8-PQFN (5x6) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 25 V |
на замовлення 30 шт: термін постачання 21-31 дні (днів) |
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KP226N3022 | Infineon Technologies | Description: AUTOMOTIVE PRESSURE SENSOR |
на замовлення 11173 шт: термін постачання 21-31 дні (днів) |
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KP266N3022 | Infineon Technologies | Description: AUTOMOTIVE PRESSURE SENSOR |
на замовлення 1297 шт: термін постачання 21-31 дні (днів) |
Мінімальне замовлення: 111 шт В кошику од. на суму грн. | ||||||||||||||
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BSC146N10LS5ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 100V 44A TDSON-8-6Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 44A (Tc) Rds On (Max) @ Id, Vgs: 14.6mOhm @ 22A, 10V Power Dissipation (Max): 2.5W (Ta), 52W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 23µA Supplier Device Package: PG-TDSON-8-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 50 V |
на замовлення 10102 шт: термін постачання 21-31 дні (днів) |
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BSC0402NSATMA1 | Infineon Technologies |
Description: MOSFET N-CH 150V 80A TDSON-8Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 75 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V Drain to Source Voltage (Vdss): 150 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Part Status: Active Supplier Device Package: PG-TDSON-8-7 Vgs(th) (Max) @ Id: 4.6V @ 107µA Power Dissipation (Max): 139W (Tc) Rds On (Max) @ Id, Vgs: 9.3mOhm @ 40A, 10 Current - Continuous Drain (Id) @ 25°C: 80A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) |
на замовлення 4848 шт: термін постачання 21-31 дні (днів) |
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BSC0403NSATMA1 | Infineon Technologies |
Description: 150V, N-CH MOSFET, LOGIC LEVEL,Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 75 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Drain to Source Voltage (Vdss): 150 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Supplier Device Package: PG-TDSON-8-7 Vgs(th) (Max) @ Id: 4.6V @ 91µA Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 35A, 10 Current - Continuous Drain (Id) @ 25°C: 70A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) |
на замовлення 253 шт: термін постачання 21-31 дні (днів) |
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BSC050N0LSG | Infineon Technologies |
Description: N-CHANNEL POWER MOSFET |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
Мінімальне замовлення: 1250 шт В кошику од. на суму грн. | ||||||||||||||
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BSC0588NSIATMA1 | Infineon Technologies |
Description: BSC0588- N-CHANNEL POWER MOSFET Packaging: Bulk |
на замовлення 215000 шт: термін постачання 21-31 дні (днів) |
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BSC0503NSIATMA1 | Infineon Technologies |
Description: MOSFET N-CH 30V 22A/88A TDSONVgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 2.5W (Ta), 36W (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 30A, 10V Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 88A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: PG-TDSON-8-6 |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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| DT61N2516KOFHPSA1 | Infineon Technologies |
Description: SCR MODULE VDRM 1200V 120A |
товару немає в наявності |
Мінімальне замовлення: 15 шт В кошику од. на суму грн. | |||||||||||||||
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BAS16B5003 | Infineon Technologies |
Description: DIODE STD 80V 250MA PGSOT23311Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 2pF @ 0V, 1MHz Current - Average Rectified (Io): 250mA Supplier Device Package: PG-SOT23-3-11 Operating Temperature - Junction: 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 1 µA @ 75 V |
на замовлення 1073000 шт: термін постачання 21-31 дні (днів) |
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BFP720FH6327XTSA1 | Infineon Technologies |
Description: RF TRANS NPN 4.7V 45GHZ 4-TSFPPackaging: Tape & Reel (TR) Package / Case: 4-SMD, Flat Leads Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Gain: 10.5dB ~ 28dB Power - Max: 100mW Current - Collector (Ic) (Max): 25mA Voltage - Collector Emitter Breakdown (Max): 4.7V DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 13mA, 3V Frequency - Transition: 45GHz Noise Figure (dB Typ @ f): 0.4dB ~ 1dB @ 150MHz ~ 10GHz Supplier Device Package: 4-TSFP Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| SIDC38D60C6X1SA3 | Infineon Technologies |
Description: DIODE GP 600V 150A WAFERPackaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 150A Supplier Device Package: Sawn on foil Operating Temperature - Junction: -40°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 150 A Current - Reverse Leakage @ Vr: 27 µA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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SIDC38D60C8X1SA1 | Infineon Technologies |
Description: DIODE STANDARD 600V 150A DIEPackaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 150A Supplier Device Package: Die Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 150 A Current - Reverse Leakage @ Vr: 27 µA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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AUIRF6215STRL | Infineon Technologies |
Description: MOSFET P-CH 150V 13A D2PAKPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Rds On (Max) @ Id, Vgs: 290mOhm @ 6.6A, 10V Power Dissipation (Max): 3.8W (Ta), 110W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Grade: Automotive Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||||||
| IFS100B12N3E4B31BDLA1 | Infineon Technologies |
Description: INTELLIGENT POWER MODULE (IPM) Packaging: Bulk Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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KITA2GTC375LITETOBO1 | Infineon Technologies |
Description: AURIX TC375 LITE EVAL BRDPart Status: Active Platform: AURIX TC375 Lite Utilized IC / Part: TC375 Core Processor: TriCore™ Contents: Board(s) Type: MCU 32-Bit Mounting Type: Fixed Packaging: Box |
на замовлення 414 шт: термін постачання 21-31 дні (днів) |
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| IRLC034NB | Infineon Technologies | Description: MOSFET 55V 28A DIE |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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IGW30N60H3 | Infineon Technologies |
Description: IGW30N60 - DISCRETE IGBT WITHOUT |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BSC0704LSATMA1 | Infineon Technologies |
Description: MOSFET N-CH 60V 11A/47A TDSONInput Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 4.5 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Not For New Designs Supplier Device Package: PG-TDSON-8-6 Vgs(th) (Max) @ Id: 2.3V @ 14µA Power Dissipation (Max): 2.1W (Ta), 36W (Tc) Rds On (Max) @ Id, Vgs: 9.4mOhm @ 24A, 10V Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 47A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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BSC0702LSATMA1 | Infineon Technologies |
Description: MOSFET N-CH 60V 100A SUPERSO8Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 4.5 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: PG-TDSON-8 Vgs(th) (Max) @ Id: 2.3V @ 49µA Power Dissipation (Max): 83W (Tc) Rds On (Max) @ Id, Vgs: 2.3mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
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BSC0702LSATMA1 | Infineon Technologies |
Description: MOSFET N-CH 60V 100A SUPERSO8Vgs(th) (Max) @ Id: 2.3V @ 49µA Power Dissipation (Max): 83W (Tc) Rds On (Max) @ Id, Vgs: 2.3mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 4.5 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: PG-TDSON-8 Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) |
на замовлення 16440 шт: термін постачання 21-31 дні (днів) |
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IPW60R024CFD7XKSA1 | Infineon Technologies |
Description: MOSFET N-CH 650V 77A TO247-3-41Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 77A (Tc) Rds On (Max) @ Id, Vgs: 24mOhm @ 42.4A, 10V Power Dissipation (Max): 320W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 2.12mA Supplier Device Package: PG-TO247-3-41 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 183 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7268 pF @ 400 V |
на замовлення 265 шт: термін постачання 21-31 дні (днів) |
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IPB65R090CFD7ATMA1 | Infineon Technologies |
Description: HIGH POWER_NEWInput Capacitance (Ciss) (Max) @ Vds: 2513 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: PG-TO263-3 Vgs(th) (Max) @ Id: 4.5V @ 630µA Power Dissipation (Max): 127W (Tc) Rds On (Max) @ Id, Vgs: 90mOhm @ 12.5A, 10V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||
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CY8C4126AXI-S423 | Infineon Technologies |
Description: IC MCU 32BIT 64KB FLASH 44TQFPCore Processor: ARM® Cortex®-M0+ Program Memory Type: FLASH Oscillator Type: Internal Operating Temperature: -40°C ~ 85°C (TA) RAM Size: 8K x 8 Program Memory Size: 64KB (64K x 8) Speed: 24MHz Mounting Type: Surface Mount Package / Case: 44-LQFP Packaging: Tray DigiKey Programmable: Not Verified Number of I/O: 36 Supplier Device Package: 44-TQFP (10x10) Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Core Size: 32-Bit Single-Core Data Converters: A/D 16x10b Slope, 16x12b SAR; D/A 2xIDAC |
на замовлення 1555 шт: термін постачання 21-31 дні (днів) |
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IPB26CN10NGATMA1 | Infineon Technologies |
Description: MOSFET N-CH 100V 35A D2PAK |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
Мінімальне замовлення: 577 шт В кошику од. на суму грн. | ||||||||||||||
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TLI4971A025T5E0001XUMA1 | Infineon Technologies |
Description: CURRENT SENSOR HE/OL 25APackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Polarization: Unidirectional Sensitivity: 48mV/A Mounting Type: Surface Mount Output: Ratiometric, Voltage Frequency: DC ~ 240kHz Accuracy: ±3.45% Operating Temperature: -40°C ~ 105°C Voltage - Supply: 3.1V ~ 3.5V Response Time: 250ns Sensor Type: Hall Effect, Open Loop Linearity: ±2.25% For Measuring: AC/DC Current - Supply (Max): 25mA Current - Sensing: 25A Grade: Automotive Part Status: Active Number of Channels: 1 Qualification: AEC-Q100 |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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| PBL38201/1QSA | Infineon Technologies | Description: SLIC |
на замовлення 2475 шт: термін постачання 21-31 дні (днів) |
Мінімальне замовлення: 92 шт В кошику од. на суму грн. | |||||||||||||||
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FZ825R33HE4DBPSA1 | Infineon Technologies |
Description: IGBT MOD 3300V 825A AG-IHVB130-3Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Single Switch Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.65V @ 15V, 825A NTC Thermistor: No Supplier Device Package: AG-IHVB130-3 IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 825 A Voltage - Collector Emitter Breakdown (Max): 3300 V Power - Max: 2400000 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 93.5 nF @ 25 V |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
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IPL60R2K1C6SATMA1 | Infineon Technologies |
Description: MOSFET N-CH 600V 2.3A THIN-PAKInput Capacitance (Ciss) (Max) @ Vds: 140 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: PG-TSON-8-2 Vgs(th) (Max) @ Id: 3.5V @ 60µA Power Dissipation (Max): 21.6W (Tc) Rds On (Max) @ Id, Vgs: 2.1Ohm @ 760mA, 10V Current - Continuous Drain (Id) @ 25°C: 2.3A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Bulk |
на замовлення 166342 шт: термін постачання 21-31 дні (днів) |
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IPLK60R1K5PFD7ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 600V 3.8A THIN-PAKVgs(th) (Max) @ Id: 4.5V @ 40µA Power Dissipation (Max): 25W (Tc) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 700mA, 10V Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 169 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: PG-TDSON-8-52 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| STL51005N | Infineon Technologies |
Description: LOW POWER 1300 NM FP LASER |
на замовлення 70 шт: термін постачання 21-31 дні (днів) |
Мінімальне замовлення: 5 шт В кошику од. на суму грн. | |||||||||||||||
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BGS14GA14E6327XTSA1 | Infineon Technologies |
Description: IC RF SWITCH SP4T 6GHZ ATSLP14-5Packaging: Bulk Package / Case: 14-UFQFN Exposed Pad Impedance: 50Ohm Mounting Type: Surface Mount Circuit: SP4T Operating Temperature: -30°C ~ 85°C Voltage - Supply: 3V Insertion Loss: 0.65dB Frequency Range: 100MHz ~ 6GHz Test Frequency: 6GHz Isolation: 27dB Supplier Device Package: ATSLP-14-5 Part Status: Obsolete |
на замовлення 4698870 шт: термін постачання 21-31 дні (днів) |
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BGS14GA14E6327XTSA1 | Infineon Technologies |
Description: IC RF SWITCH SP4T 6GHZ ATSLP14-5Packaging: Tape & Reel (TR) Package / Case: 14-UFQFN Exposed Pad Impedance: 50Ohm Mounting Type: Surface Mount Circuit: SP4T Operating Temperature: -30°C ~ 85°C Voltage - Supply: 3V Insertion Loss: 0.65dB Frequency Range: 100MHz ~ 6GHz Test Frequency: 6GHz Isolation: 27dB Supplier Device Package: ATSLP-14-5 Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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AUIRS2181STR | Infineon Technologies |
Description: IC GATE DRVR HALF-BRIDGE 8SOICPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 10V ~ 20V Input Type: Inverting High Side Voltage - Max (Bootstrap): 600 V Supplier Device Package: 8-SOIC Rise / Fall Time (Typ): 15ns, 15ns Channel Type: Independent Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: IGBT, MOSFET (N-Channel) Logic Voltage - VIL, VIH: 0.8V, 2.5V Current - Peak Output (Source, Sink): 1.9A, 2.3A Part Status: Not For New Designs DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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AUIRS2181STR | Infineon Technologies |
Description: IC GATE DRVR HALF-BRIDGE 8SOICPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 10V ~ 20V Input Type: Inverting High Side Voltage - Max (Bootstrap): 600 V Supplier Device Package: 8-SOIC Rise / Fall Time (Typ): 15ns, 15ns Channel Type: Independent Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: IGBT, MOSFET (N-Channel) Logic Voltage - VIL, VIH: 0.8V, 2.5V Current - Peak Output (Source, Sink): 1.9A, 2.3A Part Status: Not For New Designs DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BTS70121EPAXUMA1 | Infineon Technologies |
Description: PROFETPackaging: Cut Tape (CT) Features: Slew Rate Controlled Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: High Side Rds On (Typ): 11.5mOhm Input Type: Non-Inverting Voltage - Load: 6V ~ 18V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 8.5A Ratio - Input:Output: 1:1 Supplier Device Package: PG-TSDSO-14-22 Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, UVLO Part Status: Active Grade: Automotive Qualification: AEC-Q100 |
на замовлення 9157 шт: термін постачання 21-31 дні (днів) |
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BTS70101EPAXUMA1 | Infineon Technologies |
Description: PROFETPackaging: Tape & Reel (TR) Features: Slew Rate Controlled Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: High Side Rds On (Typ): 9.5mOhm Input Type: Non-Inverting Voltage - Load: 6V ~ 18V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 9A Ratio - Input:Output: 1:1 Supplier Device Package: PG-TSDSO-14-22 Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, UVLO Part Status: Active Grade: Automotive Qualification: AEC-Q100 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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BTS70101EPAXUMA1 | Infineon Technologies |
Description: PROFETPackaging: Cut Tape (CT) Features: Slew Rate Controlled Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: High Side Rds On (Typ): 9.5mOhm Input Type: Non-Inverting Voltage - Load: 6V ~ 18V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 9A Ratio - Input:Output: 1:1 Supplier Device Package: PG-TSDSO-14-22 Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, UVLO Part Status: Active Grade: Automotive Qualification: AEC-Q100 |
на замовлення 5783 шт: термін постачання 21-31 дні (днів) |
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BTS70102EPAXUMA1 | Infineon Technologies |
Description: IC PWR SWTCH N-CHAN 1:1 TSDSO-14Packaging: Tape & Reel (TR) Features: Slew Rate Controlled Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 2 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: High Side Rds On (Typ): 9.5mOhm Input Type: Non-Inverting Voltage - Load: 6V ~ 18V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 6.5A Ratio - Input:Output: 1:1 Supplier Device Package: PG-TSDSO-14-22 Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, UVLO Part Status: Active Grade: Automotive Qualification: AEC-Q100 |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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BTS70102EPAXUMA1 | Infineon Technologies |
Description: IC PWR SWTCH N-CHAN 1:1 TSDSO-14Packaging: Cut Tape (CT) Features: Slew Rate Controlled Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 2 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: High Side Rds On (Typ): 9.5mOhm Input Type: Non-Inverting Voltage - Load: 6V ~ 18V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 6.5A Ratio - Input:Output: 1:1 Supplier Device Package: PG-TSDSO-14-22 Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, UVLO Part Status: Active Grade: Automotive Qualification: AEC-Q100 |
на замовлення 9786 шт: термін постачання 21-31 дні (днів) |
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CY24488ZXC | Infineon Technologies |
Description: IC PLL CLK GEN I2C 16-TSSOP |
на замовлення 12 шт: термін постачання 21-31 дні (днів) |
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BFP182WH6327XTSA1 | Infineon Technologies |
Description: RF TRANS NPN 12V 8GHZ PG-SOT-343Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Packaging: Tape & Reel (TR) Supplier Device Package: PG-SOT343-3D Noise Figure (dB Typ @ f): 0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz Frequency - Transition: 8GHz DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 8V Voltage - Collector Emitter Breakdown (Max): 12V Current - Collector (Ic) (Max): 35mA Power - Max: 250mW Gain: 22dB Operating Temperature: 150°C (TJ) Transistor Type: NPN |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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TLE7258LEXUMA1 | Infineon Technologies |
Description: IC TRANSCEIVER 1/1 PGTSON81Part Status: Active Receiver Hysteresis: 120 mV Supplier Device Package: PG-TSON-8-1 Protocol: LINbus Data Rate: 20kbps Number of Drivers/Receivers: 1/1 Voltage - Supply: 5.5V ~ 18V Operating Temperature: -40°C ~ 150°C Type: Transceiver Mounting Type: Surface Mount, Wettable Flank Package / Case: 8-TDFN Exposed Pad Packaging: Bulk |
на замовлення 12589 шт: термін постачання 21-31 дні (днів) |
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BAS12507WH6327XTSA1 | Infineon Technologies |
Description: DIODE ARR SCHOTT 25V SOT343-4-3Packaging: Tape & Reel (TR) Package / Case: SC-82A, SOT-343 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 100mA (DC) Supplier Device Package: PG-SOT343-4-3 Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 25 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 35 mA Current - Reverse Leakage @ Vr: 150 nA @ 25 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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WCDSC006XUMA1 | Infineon Technologies |
Description: IC HALF BRIDGE DRIVER 2A 10WSONPackaging: Tape & Reel (TR) Package / Case: 10-WDFN Exposed Pad Mounting Type: Surface Mount Interface: Logic, PWM Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Half Bridge Voltage - Supply: 4.75V ~ 5.5V Rds On (Typ): 800mOhm LS (Max), 2Ohm HS (Max) Applications: General Purpose Current - Output / Channel: 2A Current - Peak Output: 2A Technology: Power MOSFET Voltage - Load: 4.75V ~ 5.5V Supplier Device Package: PG-WSON-10 Fault Protection: Current Limiting, Shoot-Through, UVLO Load Type: Inductive, Capacitive, Resistive Part Status: Active |
товару немає в наявності |
Мінімальне замовлення: 6000 шт В кошику од. на суму грн. | ||||||||||||||
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IAUA180N04S5N012AUMA1 | Infineon Technologies |
Description: MOSFET N-CH 40V 180A HSOF-5-1Packaging: Tape & Reel (TR) Package / Case: 5-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Rds On (Max) @ Id, Vgs: 1.2mOhm @ 90A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 3.4V @ 70µA Supplier Device Package: PG-HSOF-5-2 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6158 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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IAUA180N04S5N012AUMA1 | Infineon Technologies |
Description: MOSFET N-CH 40V 180A HSOF-5-1Packaging: Cut Tape (CT) Package / Case: 5-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Rds On (Max) @ Id, Vgs: 1.2mOhm @ 90A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 3.4V @ 70µA Supplier Device Package: PG-HSOF-5-2 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6158 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 3350 шт: термін постачання 21-31 дні (днів) |
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IRFR540ZTRPBF | Infineon Technologies |
Description: MOSFET N-CH 100V 35A DPAKPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 28.5mOhm @ 21A, 10V Power Dissipation (Max): 91W (Tc) Vgs(th) (Max) @ Id: 4V @ 50µA Supplier Device Package: TO-252AA (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1690 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SP000629364 | Infineon Technologies |
Description: IPP60R950C6 - 600V N-CHANNELInput Capacitance (Ciss) (Max) @ Vds: 280 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: PG-TO220-3-1 Vgs(th) (Max) @ Id: 3.5V @ 130µA Power Dissipation (Max): 37W (Tc) Rds On (Max) @ Id, Vgs: 950mOhm @ 1.5A, 10V Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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DD98N25KHPSA1 | Infineon Technologies |
Description: DIODE MODULE GP 2500V 98A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DD98N24KHPSA1 | Infineon Technologies |
Description: DIODE MODULE GP 2400V 98A |
товару немає в наявності |
Мінімальне замовлення: 15 шт В кошику од. на суму грн. | ||||||||||||||
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SAF-C505-LM | Infineon Technologies |
Description: LEGACY 8-BIT MCUPackaging: Bulk Package / Case: 44-QFP Mounting Type: Surface Mount Speed: 20MHz Program Memory Size: 16KB (16K x 8) RAM Size: 256 x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: External, Internal Program Memory Type: Mask ROM Core Processor: 8051 Data Converters: A/D 8x8b SAR Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 4.25V ~ 5.5V Connectivity: UART/USART Peripherals: POR, PWM, WDT Supplier Device Package: P-MQFP-44-1 Part Status: Active Number of I/O: 34 DigiKey Programmable: Not Verified |
на замовлення 106 шт: термін постачання 21-31 дні (днів) |
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| SAF-C505L-4EMCC | Infineon Technologies |
Description: LEGACY 8-BIT MCU Packaging: Bulk DigiKey Programmable: Not Verified |
на замовлення 3233 шт: термін постачання 21-31 дні (днів) |
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| SAF-C508-LM | Infineon Technologies | Description: LEGACY 8-BIT MCU |
товару немає в наявності |
Мінімальне замовлення: 10 шт В кошику од. на суму грн. |
| S72XS256RE0AHBH20 |
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Виробник: Infineon Technologies
Description: IC FLASH RAM 256MBIT PAR 133FBGA
Packaging: Tray
Package / Case: 133-VFBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit (FLASH), 256Mbit (DDR DRAM)
Memory Type: Non-Volatile, Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH, DRAM
Clock Frequency: 108 MHz
Memory Format: FLASH, RAM
Supplier Device Package: 133-FBGA (8x8)
Memory Interface: Parallel
DigiKey Programmable: Not Verified
Description: IC FLASH RAM 256MBIT PAR 133FBGA
Packaging: Tray
Package / Case: 133-VFBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit (FLASH), 256Mbit (DDR DRAM)
Memory Type: Non-Volatile, Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH, DRAM
Clock Frequency: 108 MHz
Memory Format: FLASH, RAM
Supplier Device Package: 133-FBGA (8x8)
Memory Interface: Parallel
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 2600 шт
В кошику
од. на суму грн.
| AUIRB24427STR |
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Виробник: Infineon Technologies
Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 5V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: PG-DSO-8-9
Rise / Fall Time (Typ): 33ns, 33ns (Max)
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 6A, 6A
DigiKey Programmable: Not Verified
Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 5V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: PG-DSO-8-9
Rise / Fall Time (Typ): 33ns, 33ns (Max)
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 6A, 6A
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
| EVAL2101HBLLCTOBO1 |
Виробник: Infineon Technologies
Description: EVAL BRD
Packaging: Bulk
Voltage - Output: 12V
Voltage - Input: 350V ~ 425V
Current - Output: 16.7A
Board Type: Fully Populated
Utilized IC / Part: 2ED2101S06F, 2ED24427N01F
Supplied Contents: Board(s)
Main Purpose: DC/DC Converter
Outputs and Type: 1, Isolated
Part Status: Active
Power - Output: 200 W
Description: EVAL BRD
Packaging: Bulk
Voltage - Output: 12V
Voltage - Input: 350V ~ 425V
Current - Output: 16.7A
Board Type: Fully Populated
Utilized IC / Part: 2ED2101S06F, 2ED24427N01F
Supplied Contents: Board(s)
Main Purpose: DC/DC Converter
Outputs and Type: 1, Isolated
Part Status: Active
Power - Output: 200 W
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 22270.85 грн |
| SIDC03D60F6X7SA1 |
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Виробник: Infineon Technologies
Description: DIODE SWITCHING 600V WAFER
Description: DIODE SWITCHING 600V WAFER
товару немає в наявності
В кошику
од. на суму грн.
| BGSA147ML10E6327XTSA1 |
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Виробник: Infineon Technologies
Description: IC RF SW SP4T 7.125GHZ TSLP10
Packaging: Tape & Reel (TR)
Package / Case: 10-XFQFN
Mounting Type: Surface Mount
Circuit: SP4T
RF Type: General Purpose
Voltage - Supply: 45V
Frequency Range: 400MHz ~ 7.125GHz
Topology: Reflective
Supplier Device Package: PG-TSLP-10-3
Description: IC RF SW SP4T 7.125GHZ TSLP10
Packaging: Tape & Reel (TR)
Package / Case: 10-XFQFN
Mounting Type: Surface Mount
Circuit: SP4T
RF Type: General Purpose
Voltage - Supply: 45V
Frequency Range: 400MHz ~ 7.125GHz
Topology: Reflective
Supplier Device Package: PG-TSLP-10-3
товару немає в наявності
Мінімальне замовлення: 7500 шт
В кошику
од. на суму грн.
| IRFH7110TRPBF |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 11A/58A 8PQFN
Packaging: Bulk
Package / Case: 8-TQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 58A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 35A, 10V
Power Dissipation (Max): 3.6W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 25 V
Description: MOSFET N-CH 100V 11A/58A 8PQFN
Packaging: Bulk
Package / Case: 8-TQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 58A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 35A, 10V
Power Dissipation (Max): 3.6W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 25 V
на замовлення 30 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 30+ | 663.55 грн |
| KP226N3022 |
Виробник: Infineon Technologies
Description: AUTOMOTIVE PRESSURE SENSOR
Description: AUTOMOTIVE PRESSURE SENSOR
на замовлення 11173 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 111+ | 191.26 грн |
| KP266N3022 |
Виробник: Infineon Technologies
Description: AUTOMOTIVE PRESSURE SENSOR
Description: AUTOMOTIVE PRESSURE SENSOR
на замовлення 1297 шт:
термін постачання 21-31 дні (днів)
| BSC146N10LS5ATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 44A TDSON-8-6
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 14.6mOhm @ 22A, 10V
Power Dissipation (Max): 2.5W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 23µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 50 V
Description: MOSFET N-CH 100V 44A TDSON-8-6
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 14.6mOhm @ 22A, 10V
Power Dissipation (Max): 2.5W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 23µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 50 V
на замовлення 10102 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 89.11 грн |
| 10+ | 73.50 грн |
| 25+ | 69.34 грн |
| 100+ | 59.68 грн |
| 250+ | 56.45 грн |
| 500+ | 54.16 грн |
| 1000+ | 51.15 грн |
| BSC0402NSATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 150V 80A TDSON-8
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Part Status: Active
Supplier Device Package: PG-TDSON-8-7
Vgs(th) (Max) @ Id: 4.6V @ 107µA
Power Dissipation (Max): 139W (Tc)
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 40A, 10
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 150V 80A TDSON-8
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Part Status: Active
Supplier Device Package: PG-TDSON-8-7
Vgs(th) (Max) @ Id: 4.6V @ 107µA
Power Dissipation (Max): 139W (Tc)
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 40A, 10
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
на замовлення 4848 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 279.74 грн |
| 10+ | 176.63 грн |
| 100+ | 123.97 грн |
| 500+ | 95.25 грн |
| 1000+ | 88.47 грн |
| 2000+ | 87.46 грн |
| BSC0403NSATMA1 |
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Виробник: Infineon Technologies
Description: 150V, N-CH MOSFET, LOGIC LEVEL,
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Supplier Device Package: PG-TDSON-8-7
Vgs(th) (Max) @ Id: 4.6V @ 91µA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 35A, 10
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Description: 150V, N-CH MOSFET, LOGIC LEVEL,
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Supplier Device Package: PG-TDSON-8-7
Vgs(th) (Max) @ Id: 4.6V @ 91µA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 35A, 10
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
на замовлення 253 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 249.52 грн |
| 10+ | 157.08 грн |
| 100+ | 109.73 грн |
| BSC050N0LSG |
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Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Description: N-CHANNEL POWER MOSFET
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| BSC0588NSIATMA1 |
на замовлення 215000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 167+ | 132.02 грн |
| BSC0503NSIATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 22A/88A TDSON
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 36W (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 88A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TDSON-8-6
Description: MOSFET N-CH 30V 22A/88A TDSON
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 36W (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 88A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TDSON-8-6
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 31.13 грн |
| DT61N2516KOFHPSA1 |
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Виробник: Infineon Technologies
Description: SCR MODULE VDRM 1200V 120A
Description: SCR MODULE VDRM 1200V 120A
товару немає в наявності
Мінімальне замовлення: 15 шт
В кошику
од. на суму грн.
| BAS16B5003 |
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Виробник: Infineon Technologies
Description: DIODE STD 80V 250MA PGSOT23311
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: PG-SOT23-3-11
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
Description: DIODE STD 80V 250MA PGSOT23311
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: PG-SOT23-3-11
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
на замовлення 1073000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8955+ | 1.97 грн |
| BFP720FH6327XTSA1 |
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Виробник: Infineon Technologies
Description: RF TRANS NPN 4.7V 45GHZ 4-TSFP
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Flat Leads
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 10.5dB ~ 28dB
Power - Max: 100mW
Current - Collector (Ic) (Max): 25mA
Voltage - Collector Emitter Breakdown (Max): 4.7V
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 13mA, 3V
Frequency - Transition: 45GHz
Noise Figure (dB Typ @ f): 0.4dB ~ 1dB @ 150MHz ~ 10GHz
Supplier Device Package: 4-TSFP
Part Status: Active
Description: RF TRANS NPN 4.7V 45GHZ 4-TSFP
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Flat Leads
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 10.5dB ~ 28dB
Power - Max: 100mW
Current - Collector (Ic) (Max): 25mA
Voltage - Collector Emitter Breakdown (Max): 4.7V
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 13mA, 3V
Frequency - Transition: 45GHz
Noise Figure (dB Typ @ f): 0.4dB ~ 1dB @ 150MHz ~ 10GHz
Supplier Device Package: 4-TSFP
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
| SIDC38D60C6X1SA3 |
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Виробник: Infineon Technologies
Description: DIODE GP 600V 150A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 150A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 150 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Description: DIODE GP 600V 150A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 150A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 150 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
товару немає в наявності
В кошику
од. на суму грн.
| SIDC38D60C8X1SA1 |
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Виробник: Infineon Technologies
Description: DIODE STANDARD 600V 150A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 150A
Supplier Device Package: Die
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 150 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Description: DIODE STANDARD 600V 150A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 150A
Supplier Device Package: Die
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 150 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
товару немає в наявності
В кошику
од. на суму грн.
| AUIRF6215STRL |
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Виробник: Infineon Technologies
Description: MOSFET P-CH 150V 13A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 6.6A, 10V
Power Dissipation (Max): 3.8W (Ta), 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Grade: Automotive
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET P-CH 150V 13A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 6.6A, 10V
Power Dissipation (Max): 3.8W (Ta), 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Grade: Automotive
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.
| IFS100B12N3E4B31BDLA1 |
Виробник: Infineon Technologies
Description: INTELLIGENT POWER MODULE (IPM)
Packaging: Bulk
Part Status: Active
Description: INTELLIGENT POWER MODULE (IPM)
Packaging: Bulk
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
| KITA2GTC375LITETOBO1 |
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Виробник: Infineon Technologies
Description: AURIX TC375 LITE EVAL BRD
Part Status: Active
Platform: AURIX TC375 Lite
Utilized IC / Part: TC375
Core Processor: TriCore™
Contents: Board(s)
Type: MCU 32-Bit
Mounting Type: Fixed
Packaging: Box
Description: AURIX TC375 LITE EVAL BRD
Part Status: Active
Platform: AURIX TC375 Lite
Utilized IC / Part: TC375
Core Processor: TriCore™
Contents: Board(s)
Type: MCU 32-Bit
Mounting Type: Fixed
Packaging: Box
на замовлення 414 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 7821.92 грн |
| IRLC034NB |
Виробник: Infineon Technologies
Description: MOSFET 55V 28A DIE
Description: MOSFET 55V 28A DIE
товару немає в наявності
В кошику
од. на суму грн.
| IGW30N60H3 |
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Виробник: Infineon Technologies
Description: IGW30N60 - DISCRETE IGBT WITHOUT
Description: IGW30N60 - DISCRETE IGBT WITHOUT
товару немає в наявності
В кошику
од. на суму грн.
| BSC0704LSATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 11A/47A TDSON
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 4.5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Not For New Designs
Supplier Device Package: PG-TDSON-8-6
Vgs(th) (Max) @ Id: 2.3V @ 14µA
Power Dissipation (Max): 2.1W (Ta), 36W (Tc)
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 24A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 47A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 60V 11A/47A TDSON
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 4.5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Not For New Designs
Supplier Device Package: PG-TDSON-8-6
Vgs(th) (Max) @ Id: 2.3V @ 14µA
Power Dissipation (Max): 2.1W (Ta), 36W (Tc)
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 24A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 47A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 24.87 грн |
| BSC0702LSATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 100A SUPERSO8
Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 4.5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-TDSON-8
Vgs(th) (Max) @ Id: 2.3V @ 49µA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 60V 100A SUPERSO8
Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 4.5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-TDSON-8
Vgs(th) (Max) @ Id: 2.3V @ 49µA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 53.11 грн |
| BSC0702LSATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 100A SUPERSO8
Vgs(th) (Max) @ Id: 2.3V @ 49µA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 4.5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-TDSON-8
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 60V 100A SUPERSO8
Vgs(th) (Max) @ Id: 2.3V @ 49µA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 4.5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-TDSON-8
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
на замовлення 16440 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 180.55 грн |
| 10+ | 111.71 грн |
| 100+ | 76.43 грн |
| 500+ | 57.55 грн |
| 1000+ | 52.99 грн |
| 2000+ | 49.15 грн |
| IPW60R024CFD7XKSA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 77A TO247-3-41
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 42.4A, 10V
Power Dissipation (Max): 320W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 2.12mA
Supplier Device Package: PG-TO247-3-41
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 183 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7268 pF @ 400 V
Description: MOSFET N-CH 650V 77A TO247-3-41
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 42.4A, 10V
Power Dissipation (Max): 320W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 2.12mA
Supplier Device Package: PG-TO247-3-41
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 183 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7268 pF @ 400 V
на замовлення 265 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1129.82 грн |
| 30+ | 661.61 грн |
| 120+ | 568.29 грн |
| IPB65R090CFD7ATMA1 |
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Виробник: Infineon Technologies
Description: HIGH POWER_NEW
Input Capacitance (Ciss) (Max) @ Vds: 2513 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO263-3
Vgs(th) (Max) @ Id: 4.5V @ 630µA
Power Dissipation (Max): 127W (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 12.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Description: HIGH POWER_NEW
Input Capacitance (Ciss) (Max) @ Vds: 2513 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO263-3
Vgs(th) (Max) @ Id: 4.5V @ 630µA
Power Dissipation (Max): 127W (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 12.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| CY8C4126AXI-S423 |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 64KB FLASH 44TQFP
Core Processor: ARM® Cortex®-M0+
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 8K x 8
Program Memory Size: 64KB (64K x 8)
Speed: 24MHz
Mounting Type: Surface Mount
Package / Case: 44-LQFP
Packaging: Tray
DigiKey Programmable: Not Verified
Number of I/O: 36
Supplier Device Package: 44-TQFP (10x10)
Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 16x10b Slope, 16x12b SAR; D/A 2xIDAC
Description: IC MCU 32BIT 64KB FLASH 44TQFP
Core Processor: ARM® Cortex®-M0+
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 8K x 8
Program Memory Size: 64KB (64K x 8)
Speed: 24MHz
Mounting Type: Surface Mount
Package / Case: 44-LQFP
Packaging: Tray
DigiKey Programmable: Not Verified
Number of I/O: 36
Supplier Device Package: 44-TQFP (10x10)
Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 16x10b Slope, 16x12b SAR; D/A 2xIDAC
на замовлення 1555 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 267.34 грн |
| 10+ | 193.72 грн |
| 25+ | 177.84 грн |
| 160+ | 146.28 грн |
| 320+ | 140.94 грн |
| 480+ | 138.27 грн |
| 960+ | 132.15 грн |
| IPB26CN10NGATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 35A D2PAK
Description: MOSFET N-CH 100V 35A D2PAK
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
| TLI4971A025T5E0001XUMA1 |
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Виробник: Infineon Technologies
Description: CURRENT SENSOR HE/OL 25A
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Polarization: Unidirectional
Sensitivity: 48mV/A
Mounting Type: Surface Mount
Output: Ratiometric, Voltage
Frequency: DC ~ 240kHz
Accuracy: ±3.45%
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 3.1V ~ 3.5V
Response Time: 250ns
Sensor Type: Hall Effect, Open Loop
Linearity: ±2.25%
For Measuring: AC/DC
Current - Supply (Max): 25mA
Current - Sensing: 25A
Grade: Automotive
Part Status: Active
Number of Channels: 1
Qualification: AEC-Q100
Description: CURRENT SENSOR HE/OL 25A
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Polarization: Unidirectional
Sensitivity: 48mV/A
Mounting Type: Surface Mount
Output: Ratiometric, Voltage
Frequency: DC ~ 240kHz
Accuracy: ±3.45%
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 3.1V ~ 3.5V
Response Time: 250ns
Sensor Type: Hall Effect, Open Loop
Linearity: ±2.25%
For Measuring: AC/DC
Current - Supply (Max): 25mA
Current - Sensing: 25A
Grade: Automotive
Part Status: Active
Number of Channels: 1
Qualification: AEC-Q100
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 165.06 грн |
| PBL38201/1QSA |
Виробник: Infineon Technologies
Description: SLIC
Description: SLIC
на замовлення 2475 шт:
термін постачання 21-31 дні (днів)
| FZ825R33HE4DBPSA1 |
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Виробник: Infineon Technologies
Description: IGBT MOD 3300V 825A AG-IHVB130-3
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.65V @ 15V, 825A
NTC Thermistor: No
Supplier Device Package: AG-IHVB130-3
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 825 A
Voltage - Collector Emitter Breakdown (Max): 3300 V
Power - Max: 2400000 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 93.5 nF @ 25 V
Description: IGBT MOD 3300V 825A AG-IHVB130-3
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.65V @ 15V, 825A
NTC Thermistor: No
Supplier Device Package: AG-IHVB130-3
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 825 A
Voltage - Collector Emitter Breakdown (Max): 3300 V
Power - Max: 2400000 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 93.5 nF @ 25 V
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 75356.67 грн |
| IPL60R2K1C6SATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 2.3A THIN-PAK
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PG-TSON-8-2
Vgs(th) (Max) @ Id: 3.5V @ 60µA
Power Dissipation (Max): 21.6W (Tc)
Rds On (Max) @ Id, Vgs: 2.1Ohm @ 760mA, 10V
Current - Continuous Drain (Id) @ 25°C: 2.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Bulk
Description: MOSFET N-CH 600V 2.3A THIN-PAK
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PG-TSON-8-2
Vgs(th) (Max) @ Id: 3.5V @ 60µA
Power Dissipation (Max): 21.6W (Tc)
Rds On (Max) @ Id, Vgs: 2.1Ohm @ 760mA, 10V
Current - Continuous Drain (Id) @ 25°C: 2.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Bulk
на замовлення 166342 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 919+ | 24.34 грн |
| IPLK60R1K5PFD7ATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 3.8A THIN-PAK
Vgs(th) (Max) @ Id: 4.5V @ 40µA
Power Dissipation (Max): 25W (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 700mA, 10V
Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 169 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TDSON-8-52
Description: MOSFET N-CH 600V 3.8A THIN-PAK
Vgs(th) (Max) @ Id: 4.5V @ 40µA
Power Dissipation (Max): 25W (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 700mA, 10V
Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 169 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TDSON-8-52
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В кошику
од. на суму грн.
| STL51005N |
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Виробник: Infineon Technologies
Description: LOW POWER 1300 NM FP LASER
Description: LOW POWER 1300 NM FP LASER
на замовлення 70 шт:
термін постачання 21-31 дні (днів)
| BGS14GA14E6327XTSA1 |
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Виробник: Infineon Technologies
Description: IC RF SWITCH SP4T 6GHZ ATSLP14-5
Packaging: Bulk
Package / Case: 14-UFQFN Exposed Pad
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: SP4T
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 3V
Insertion Loss: 0.65dB
Frequency Range: 100MHz ~ 6GHz
Test Frequency: 6GHz
Isolation: 27dB
Supplier Device Package: ATSLP-14-5
Part Status: Obsolete
Description: IC RF SWITCH SP4T 6GHZ ATSLP14-5
Packaging: Bulk
Package / Case: 14-UFQFN Exposed Pad
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: SP4T
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 3V
Insertion Loss: 0.65dB
Frequency Range: 100MHz ~ 6GHz
Test Frequency: 6GHz
Isolation: 27dB
Supplier Device Package: ATSLP-14-5
Part Status: Obsolete
на замовлення 4698870 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 908+ | 21.92 грн |
| BGS14GA14E6327XTSA1 |
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Виробник: Infineon Technologies
Description: IC RF SWITCH SP4T 6GHZ ATSLP14-5
Packaging: Tape & Reel (TR)
Package / Case: 14-UFQFN Exposed Pad
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: SP4T
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 3V
Insertion Loss: 0.65dB
Frequency Range: 100MHz ~ 6GHz
Test Frequency: 6GHz
Isolation: 27dB
Supplier Device Package: ATSLP-14-5
Part Status: Obsolete
Description: IC RF SWITCH SP4T 6GHZ ATSLP14-5
Packaging: Tape & Reel (TR)
Package / Case: 14-UFQFN Exposed Pad
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: SP4T
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 3V
Insertion Loss: 0.65dB
Frequency Range: 100MHz ~ 6GHz
Test Frequency: 6GHz
Isolation: 27dB
Supplier Device Package: ATSLP-14-5
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
| AUIRS2181STR |
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Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 15ns, 15ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 15ns, 15ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| AUIRS2181STR |
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Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 15ns, 15ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 15ns, 15ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
| BTS70121EPAXUMA1 |
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Виробник: Infineon Technologies
Description: PROFET
Packaging: Cut Tape (CT)
Features: Slew Rate Controlled
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 11.5mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 18V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 8.5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-14-22
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, UVLO
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
Description: PROFET
Packaging: Cut Tape (CT)
Features: Slew Rate Controlled
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 11.5mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 18V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 8.5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-14-22
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, UVLO
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 9157 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 105.39 грн |
| 10+ | 87.08 грн |
| 25+ | 82.14 грн |
| 100+ | 70.74 грн |
| 250+ | 66.93 грн |
| 500+ | 64.24 грн |
| 1000+ | 60.69 грн |
| BTS70101EPAXUMA1 |
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Виробник: Infineon Technologies
Description: PROFET
Packaging: Tape & Reel (TR)
Features: Slew Rate Controlled
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 9.5mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 18V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 9A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-14-22
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, UVLO
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
Description: PROFET
Packaging: Tape & Reel (TR)
Features: Slew Rate Controlled
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 9.5mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 18V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 9A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-14-22
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, UVLO
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 66.79 грн |
| BTS70101EPAXUMA1 |
![]() |
Виробник: Infineon Technologies
Description: PROFET
Packaging: Cut Tape (CT)
Features: Slew Rate Controlled
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 9.5mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 18V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 9A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-14-22
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, UVLO
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
Description: PROFET
Packaging: Cut Tape (CT)
Features: Slew Rate Controlled
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 9.5mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 18V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 9A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-14-22
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, UVLO
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 5783 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 109.26 грн |
| 10+ | 90.59 грн |
| 25+ | 85.49 грн |
| 100+ | 73.64 грн |
| 250+ | 69.68 грн |
| 500+ | 66.88 грн |
| 1000+ | 63.19 грн |
| BTS70102EPAXUMA1 |
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Виробник: Infineon Technologies
Description: IC PWR SWTCH N-CHAN 1:1 TSDSO-14
Packaging: Tape & Reel (TR)
Features: Slew Rate Controlled
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 9.5mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 18V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 6.5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-14-22
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, UVLO
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
Description: IC PWR SWTCH N-CHAN 1:1 TSDSO-14
Packaging: Tape & Reel (TR)
Features: Slew Rate Controlled
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 9.5mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 18V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 6.5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-14-22
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, UVLO
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 73.15 грн |
| 6000+ | 69.01 грн |
| 9000+ | 68.30 грн |
| BTS70102EPAXUMA1 |
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Виробник: Infineon Technologies
Description: IC PWR SWTCH N-CHAN 1:1 TSDSO-14
Packaging: Cut Tape (CT)
Features: Slew Rate Controlled
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 9.5mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 18V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 6.5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-14-22
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, UVLO
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
Description: IC PWR SWTCH N-CHAN 1:1 TSDSO-14
Packaging: Cut Tape (CT)
Features: Slew Rate Controlled
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 9.5mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 18V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 6.5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-14-22
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, UVLO
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 9786 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 144.13 грн |
| 10+ | 102.45 грн |
| 25+ | 93.31 грн |
| 100+ | 78.22 грн |
| 250+ | 73.75 грн |
| 500+ | 71.28 грн |
| CY24488ZXC |
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Виробник: Infineon Technologies
Description: IC PLL CLK GEN I2C 16-TSSOP
Description: IC PLL CLK GEN I2C 16-TSSOP
на замовлення 12 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 95.31 грн |
| BFP182WH6327XTSA1 |
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Виробник: Infineon Technologies
Description: RF TRANS NPN 12V 8GHZ PG-SOT-343
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Packaging: Tape & Reel (TR)
Supplier Device Package: PG-SOT343-3D
Noise Figure (dB Typ @ f): 0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz
Frequency - Transition: 8GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 8V
Voltage - Collector Emitter Breakdown (Max): 12V
Current - Collector (Ic) (Max): 35mA
Power - Max: 250mW
Gain: 22dB
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Description: RF TRANS NPN 12V 8GHZ PG-SOT-343
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Packaging: Tape & Reel (TR)
Supplier Device Package: PG-SOT343-3D
Noise Figure (dB Typ @ f): 0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz
Frequency - Transition: 8GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 8V
Voltage - Collector Emitter Breakdown (Max): 12V
Current - Collector (Ic) (Max): 35mA
Power - Max: 250mW
Gain: 22dB
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 7.59 грн |
| 6000+ | 7.09 грн |
| TLE7258LEXUMA1 |
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Виробник: Infineon Technologies
Description: IC TRANSCEIVER 1/1 PGTSON81
Part Status: Active
Receiver Hysteresis: 120 mV
Supplier Device Package: PG-TSON-8-1
Protocol: LINbus
Data Rate: 20kbps
Number of Drivers/Receivers: 1/1
Voltage - Supply: 5.5V ~ 18V
Operating Temperature: -40°C ~ 150°C
Type: Transceiver
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-TDFN Exposed Pad
Packaging: Bulk
Description: IC TRANSCEIVER 1/1 PGTSON81
Part Status: Active
Receiver Hysteresis: 120 mV
Supplier Device Package: PG-TSON-8-1
Protocol: LINbus
Data Rate: 20kbps
Number of Drivers/Receivers: 1/1
Voltage - Supply: 5.5V ~ 18V
Operating Temperature: -40°C ~ 150°C
Type: Transceiver
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-TDFN Exposed Pad
Packaging: Bulk
на замовлення 12589 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 384+ | 52.21 грн |
| BAS12507WH6327XTSA1 |
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Виробник: Infineon Technologies
Description: DIODE ARR SCHOTT 25V SOT343-4-3
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 100mA (DC)
Supplier Device Package: PG-SOT343-4-3
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 25 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 35 mA
Current - Reverse Leakage @ Vr: 150 nA @ 25 V
Description: DIODE ARR SCHOTT 25V SOT343-4-3
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 100mA (DC)
Supplier Device Package: PG-SOT343-4-3
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 25 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 35 mA
Current - Reverse Leakage @ Vr: 150 nA @ 25 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 17.41 грн |
| WCDSC006XUMA1 |
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Виробник: Infineon Technologies
Description: IC HALF BRIDGE DRIVER 2A 10WSON
Packaging: Tape & Reel (TR)
Package / Case: 10-WDFN Exposed Pad
Mounting Type: Surface Mount
Interface: Logic, PWM
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.75V ~ 5.5V
Rds On (Typ): 800mOhm LS (Max), 2Ohm HS (Max)
Applications: General Purpose
Current - Output / Channel: 2A
Current - Peak Output: 2A
Technology: Power MOSFET
Voltage - Load: 4.75V ~ 5.5V
Supplier Device Package: PG-WSON-10
Fault Protection: Current Limiting, Shoot-Through, UVLO
Load Type: Inductive, Capacitive, Resistive
Part Status: Active
Description: IC HALF BRIDGE DRIVER 2A 10WSON
Packaging: Tape & Reel (TR)
Package / Case: 10-WDFN Exposed Pad
Mounting Type: Surface Mount
Interface: Logic, PWM
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.75V ~ 5.5V
Rds On (Typ): 800mOhm LS (Max), 2Ohm HS (Max)
Applications: General Purpose
Current - Output / Channel: 2A
Current - Peak Output: 2A
Technology: Power MOSFET
Voltage - Load: 4.75V ~ 5.5V
Supplier Device Package: PG-WSON-10
Fault Protection: Current Limiting, Shoot-Through, UVLO
Load Type: Inductive, Capacitive, Resistive
Part Status: Active
товару немає в наявності
Мінімальне замовлення: 6000 шт
В кошику
од. на суму грн.
| IAUA180N04S5N012AUMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 180A HSOF-5-1
Packaging: Tape & Reel (TR)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 90A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 70µA
Supplier Device Package: PG-HSOF-5-2
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6158 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 180A HSOF-5-1
Packaging: Tape & Reel (TR)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 90A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 70µA
Supplier Device Package: PG-HSOF-5-2
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6158 pF @ 25 V
Qualification: AEC-Q101
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2000+ | 62.01 грн |
| IAUA180N04S5N012AUMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 180A HSOF-5-1
Packaging: Cut Tape (CT)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 90A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 70µA
Supplier Device Package: PG-HSOF-5-2
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6158 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 180A HSOF-5-1
Packaging: Cut Tape (CT)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 90A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 70µA
Supplier Device Package: PG-HSOF-5-2
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6158 pF @ 25 V
Qualification: AEC-Q101
на замовлення 3350 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 199.93 грн |
| 10+ | 107.53 грн |
| 100+ | 77.02 грн |
| 500+ | 66.88 грн |
| IRFR540ZTRPBF |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 35A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 28.5mOhm @ 21A, 10V
Power Dissipation (Max): 91W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1690 pF @ 25 V
Description: MOSFET N-CH 100V 35A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 28.5mOhm @ 21A, 10V
Power Dissipation (Max): 91W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1690 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| SP000629364 |
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Виробник: Infineon Technologies
Description: IPP60R950C6 - 600V N-CHANNEL
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO220-3-1
Vgs(th) (Max) @ Id: 3.5V @ 130µA
Power Dissipation (Max): 37W (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: IPP60R950C6 - 600V N-CHANNEL
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO220-3-1
Vgs(th) (Max) @ Id: 3.5V @ 130µA
Power Dissipation (Max): 37W (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 649+ | 35.65 грн |
| DD98N25KHPSA1 |
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Виробник: Infineon Technologies
Description: DIODE MODULE GP 2500V 98A
Description: DIODE MODULE GP 2500V 98A
товару немає в наявності
В кошику
од. на суму грн.
| DD98N24KHPSA1 |
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Виробник: Infineon Technologies
Description: DIODE MODULE GP 2400V 98A
Description: DIODE MODULE GP 2400V 98A
товару немає в наявності
Мінімальне замовлення: 15 шт
В кошику
од. на суму грн.
| SAF-C505-LM |
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Виробник: Infineon Technologies
Description: LEGACY 8-BIT MCU
Packaging: Bulk
Package / Case: 44-QFP
Mounting Type: Surface Mount
Speed: 20MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: Mask ROM
Core Processor: 8051
Data Converters: A/D 8x8b SAR
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 4.25V ~ 5.5V
Connectivity: UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: P-MQFP-44-1
Part Status: Active
Number of I/O: 34
DigiKey Programmable: Not Verified
Description: LEGACY 8-BIT MCU
Packaging: Bulk
Package / Case: 44-QFP
Mounting Type: Surface Mount
Speed: 20MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: Mask ROM
Core Processor: 8051
Data Converters: A/D 8x8b SAR
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 4.25V ~ 5.5V
Connectivity: UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: P-MQFP-44-1
Part Status: Active
Number of I/O: 34
DigiKey Programmable: Not Verified
на замовлення 106 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 46+ | 430.19 грн |
| SAF-C505L-4EMCC |
Виробник: Infineon Technologies
Description: LEGACY 8-BIT MCU
Packaging: Bulk
DigiKey Programmable: Not Verified
Description: LEGACY 8-BIT MCU
Packaging: Bulk
DigiKey Programmable: Not Verified
на замовлення 3233 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 41+ | 529.87 грн |
| SAF-C508-LM |
Виробник: Infineon Technologies
Description: LEGACY 8-BIT MCU
Description: LEGACY 8-BIT MCU
товару немає в наявності
Мінімальне замовлення: 10 шт
В кошику
од. на суму грн.








































