Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (149775) > Сторінка 406 з 2497
| Фото | Назва | Виробник | Інформація | Доступність | Ціна | ||||||||||||||
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|  | IPBE65R075CFD7AATMA1 | Infineon Technologies |  Description: MOSFET N-CH 650V 32A TO263-7 Packaging: Cut Tape (CT) Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Rds On (Max) @ Id, Vgs: 75mOhm @ 16.4A, 10V Power Dissipation (Max): 171W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 820µA Supplier Device Package: PG-TO263-7-3-10 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3288 pF @ 400 V Qualification: AEC-Q101 | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
|  | IPBE65R230CFD7AATMA1 | Infineon Technologies |  Description: MOSFET N-CH 650V 11A TO263-7 Packaging: Tape & Reel (TR) Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 230mOhm @ 5.2A, 10V Power Dissipation (Max): 63W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 260µA Supplier Device Package: PG-TO263-7-3-10 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1044 pF @ 400 V Qualification: AEC-Q101 | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
|  | IPBE65R230CFD7AATMA1 | Infineon Technologies |  Description: MOSFET N-CH 650V 11A TO263-7 Packaging: Cut Tape (CT) Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 230mOhm @ 5.2A, 10V Power Dissipation (Max): 63W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 260µA Supplier Device Package: PG-TO263-7-3-10 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1044 pF @ 400 V Qualification: AEC-Q101 | на замовлення 1505 шт:термін постачання 21-31 дні (днів) | 
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|   | PTMA080302MV1AUMA1 | Infineon Technologies |  Description: IC AMP GSM 700MHZ-1GHZ DSO20-63 Packaging: Bulk Package / Case: 20-SOIC (0.433", 11.00mm Width) Exposed Pad Mounting Type: Surface Mount Frequency: 700MHz ~ 1GHz RF Type: GSM, EDGE Gain: 30dB Supplier Device Package: PG-DSO-20-63 Part Status: Obsolete | на замовлення 166 шт:термін постачання 21-31 дні (днів) | 
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|   | CY7C1399BL-12ZXCT | Infineon Technologies |  Description: IC SRAM 256KBIT PAR 28TSOP I Packaging: Bulk Package / Case: 28-TSSOP (0.465", 11.80mm Width) Mounting Type: Surface Mount Memory Size: 256Kbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 3V ~ 3.6V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 28-TSOP I Write Cycle Time - Word, Page: 12ns Memory Interface: Parallel Access Time: 12 ns Memory Organization: 32K x 8 DigiKey Programmable: Not Verified | на замовлення 4500 шт:термін постачання 21-31 дні (днів) | 
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|  | CY25811ZXCT | Infineon Technologies |  Description: IC CLOCK GEN 3.3V SS 8-TSSOP | на замовлення 6860 шт:термін постачання 21-31 дні (днів) | 
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|   | BSC0502NSIATMA1 | Infineon Technologies |  Description: MOSFET N-CH 30V 26A/100A TDSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 2.3mOhm @ 30A, 10V Power Dissipation (Max): 2.5W (Ta), 43W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PG-TDSON-8-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 15 V | на замовлення 15000 шт:термін постачання 21-31 дні (днів) | 
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|   | BSC0502NSIATMA1 | Infineon Technologies |  Description: MOSFET N-CH 30V 26A/100A TDSON Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 2.3mOhm @ 30A, 10V Power Dissipation (Max): 2.5W (Ta), 43W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PG-TDSON-8-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 15 V | на замовлення 23737 шт:термін постачання 21-31 дні (днів) | 
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|   | KP229E2701XTMA1 | Infineon Technologies |  Description: SENSOR 43.51PSIA 4.65V DSOF8 Features: Amplified Output, Temperature Compensated Packaging: Cut Tape (CT) Package / Case: 8-SMD Module Output Type: Analog Voltage Mounting Type: Surface Mount Output: 0.4 V ~ 4.65 V Operating Pressure: 1.45PSI ~ 43.51PSI (10kPa ~ 300kPa) Pressure Type: Absolute Accuracy: ±0.544PSI (±3.75kPa) Operating Temperature: -40°C ~ 140°C Termination Style: SMD (SMT) Tab Voltage - Supply: 4.5V ~ 5.5V Applications: Board Mount Supplier Device Package: PG-DSOF-8-16 Port Style: No Port Grade: Automotive Part Status: Active Qualification: AEC-Q100 | на замовлення 7046 шт:термін постачання 21-31 дні (днів) | 
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|   | IRLR8721TRPBF-1 | Infineon Technologies |  Description: MOSFET N-CH 30V 65A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 65A (Tc) Rds On (Max) @ Id, Vgs: 8.4mOhm @ 25A, 10V Power Dissipation (Max): 65W (Tc) Vgs(th) (Max) @ Id: 2.35V @ 25µA Supplier Device Package: TO-252AA (DPAK) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 15 V | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
|   | XC167CI32F40FBBAKXUMA1 | Infineon Technologies |  Description: IC MCU 16BIT 256KB FLASH 144TQFP | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
|   | TLI4906L | Infineon Technologies |  Description: TLI4906 - HALL SWITCH Features: Temperature Compensated Packaging: Bulk Package / Case: 3-SSIP, SSO-3-02 Output Type: Open Drain Polarization: South Pole Mounting Type: Through Hole Function: Unipolar Switch Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2.7V ~ 18V Technology: Hall Effect Sensing Range: 18mT Trip, 5mT Release Current - Output (Max): 20mA Current - Supply (Max): 6mA Supplier Device Package: PG-SSO-3-2 Test Condition: 25°C Part Status: Active | на замовлення 19999 шт:термін постачання 21-31 дні (днів) | 
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|   | SAK-C868-1SG BA | Infineon Technologies |  Description: IC MCU 8BIT 8KB RAM DSO28 Packaging: Tape & Reel (TR) Package / Case: 28-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Speed: 40MHz Program Memory Size: 8KB (8K x 8) RAM Size: 512 x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: External Program Memory Type: RAM Core Processor: C800 Data Converters: A/D 5x8b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 3V ~ 3.6V Connectivity: UART/USART Peripherals: Brown-out Detect/Reset, PWM, WDT Supplier Device Package: P-DSO-28 Part Status: Obsolete Number of I/O: 18 DigiKey Programmable: Not Verified | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
|   | TLE9255WSKXUMA2 | Infineon Technologies |  Description: IC TRANSCEIVER FULL DSO-14 Packaging: Tape & Reel (TR) Package / Case: 14-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Type: Transceiver Operating Temperature: -40°C ~ 150°C Voltage - Supply: 4.75V ~ 5.25V Data Rate: 1Mbps Protocol: CANbus Supplier Device Package: PG-DSO-14 Duplex: Full Part Status: Active Grade: Automotive | на замовлення 5000 шт:термін постачання 21-31 дні (днів) | 
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|   | TLE9255WSKXUMA2 | Infineon Technologies |  Description: IC TRANSCEIVER FULL DSO-14 Packaging: Cut Tape (CT) Package / Case: 14-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Type: Transceiver Operating Temperature: -40°C ~ 150°C Voltage - Supply: 4.75V ~ 5.25V Data Rate: 1Mbps Protocol: CANbus Supplier Device Package: PG-DSO-14 Duplex: Full Part Status: Active Grade: Automotive | на замовлення 7063 шт:термін постачання 21-31 дні (днів) | 
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|   | BAS70-04E6327 | Infineon Technologies |  Description: BAS70 - HIGH SPEED SWITCHING, CL Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 100 ps Technology: Schottky Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 70mA (DC) Supplier Device Package: PG-SOT23 Operating Temperature - Junction: 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 70 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA Current - Reverse Leakage @ Vr: 100 nA @ 50 V | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
|   | IRL520NSTRLPBF | Infineon Technologies |  Description: MOSFET N-CH 100V 10A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 180mOhm @ 6A, 10V Power Dissipation (Max): 3.8W (Ta), 48W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: D2PAK Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
|   | AIKW50N65RF5XKSA1 | Infineon Technologies |  Description: IGBT TRENCH FS 650V 80A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A Supplier Device Package: PG-TO247-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 20ns/156ns Switching Energy: 310µJ (on), 120µJ (off) Test Condition: 400V, 25A, 12Ohm, 15V Gate Charge: 109 nC Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 150 A Power - Max: 250 W Qualification: AEC-Q101 | на замовлення 190 шт:термін постачання 21-31 дні (днів) | 
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|   | BTS500201TADATMA1 | Infineon Technologies |  Description: IC PWR SWITCH N-CHAN 1:1 TO263-7 Packaging: Tape & Reel (TR) Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: High Side Rds On (Typ): 3mOhm Input Type: Non-Inverting Voltage - Load: 8V ~ 18V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 29A Ratio - Input:Output: 1:1 Supplier Device Package: P/PG-TO-263-7-10 Fault Protection: Over Temperature, Over Voltage, Reverse Battery, Short Circuit Grade: Automotive Qualification: AEC-Q100 | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
|   | IFX1040SJXUMA1 | Infineon Technologies |  Description: IC TRANSCEIVER FULL 1/1 DSO-8 Packaging: Bulk Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Type: Transceiver Operating Temperature: -40°C ~ 125°C Voltage - Supply: 4.75V ~ 5.25V Number of Drivers/Receivers: 1/1 Data Rate: 1MBd Protocol: CANbus Supplier Device Package: PG-DSO-8 Receiver Hysteresis: 200 mV Duplex: Full | на замовлення 40000 шт:термін постачання 21-31 дні (днів) | 
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|   | TLE8457ASJXUMA1 | Infineon Technologies |  Description: IC TRANSCEIVER 1/1 DSO-8 | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
|   | CY7C4205-10AXC | Infineon Technologies |  Description: IC FIFO SYNC 256X18 8NS 64TQFP Packaging: Tray Package / Case: 64-LQFP Mounting Type: Surface Mount Function: Synchronous Memory Size: 4.5K (256 x 18) Operating Temperature: 0°C ~ 70°C Data Rate: 100MHz Access Time: 8ns Current - Supply (Max): 45mA Supplier Device Package: 64-TQFP (14x14) Bus Directional: Uni-Directional Expansion Type: Depth, Width Programmable Flags Support: Yes Retransmit Capability: Yes FWFT Support: No Part Status: Obsolete Voltage - Supply: 4.5 V ~ 5.5 V DigiKey Programmable: Not Verified | на замовлення 1057 шт:термін постачання 21-31 дні (днів) | 
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|   | CY7C4205-10AC | Infineon Technologies | Description: IC FIFO SYNC 256X18 8NS 64TQFP Packaging: Bag Package / Case: 64-LQFP Mounting Type: Surface Mount Function: Synchronous Memory Size: 4.5K (256 x 18) Operating Temperature: 0°C ~ 70°C Data Rate: 100MHz Access Time: 8ns Current - Supply (Max): 45mA Supplier Device Package: 64-TQFP (14x14) Bus Directional: Uni-Directional Expansion Type: Depth, Width Programmable Flags Support: Yes Retransmit Capability: Yes FWFT Support: No Part Status: Obsolete Voltage - Supply: 4.5 V ~ 5.5 V DigiKey Programmable: Not Verified | на замовлення 92 шт:термін постачання 21-31 дні (днів) | 
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|   | CY7C4291V-15JXC | Infineon Technologies |  Description: IC FIFO SYNC 128KX9 10NS 32PLCC Packaging: Bulk Package / Case: 32-LCC (J-Lead) Mounting Type: Surface Mount Function: Synchronous Memory Size: 1.125M (128K x 9) Operating Temperature: 0°C ~ 70°C Data Rate: 66.7MHz Access Time: 10ns Current - Supply (Max): 25mA Supplier Device Package: 32-PLCC (11.43x13.97) Bus Directional: Uni-Directional Expansion Type: Depth, Width Programmable Flags Support: Yes Retransmit Capability: No FWFT Support: No Voltage - Supply: 3 V ~ 3.6 V DigiKey Programmable: Not Verified | на замовлення 23 шт:термін постачання 21-31 дні (днів) | 
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|   | PVDZ172NS-TPBF | Infineon Technologies |  Description: SSR RELAY SPST-NO 1.5A 0-60V Packaging: Bulk Package / Case: 8-SMD (0.300", 7.62mm), 4 Leads Output Type: DC Mounting Type: Surface Mount Voltage - Input: 1.2VDC Circuit: SPST-NO (1 Form A) Operating Temperature: -40°C ~ 85°C Termination Style: Gull Wing Load Current: 1.5 A Approval Agency: UL Supplier Device Package: 8-SMD Part Status: Active Voltage - Load: 0 V ~ 60 V On-State Resistance (Max): 250 MOhms | на замовлення 848 шт:термін постачання 21-31 дні (днів) | 
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|   | IDD06SG60CXTMA2 | Infineon Technologies |  Description: DIODE SIL CARB 600V 6A PGTO2523 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 130pF @ 1V, 1MHz Current - Average Rectified (Io): 6A Supplier Device Package: PG-TO252-3 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 6 A Current - Reverse Leakage @ Vr: 50 µA @ 600 V | на замовлення 7500 шт:термін постачання 21-31 дні (днів) | 
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|   | IDD06SG60CXTMA2 | Infineon Technologies |  Description: DIODE SIL CARB 600V 6A PGTO2523 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 130pF @ 1V, 1MHz Current - Average Rectified (Io): 6A Supplier Device Package: PG-TO252-3 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 6 A Current - Reverse Leakage @ Vr: 50 µA @ 600 V | на замовлення 9208 шт:термін постачання 21-31 дні (днів) | 
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|   | TLS4125D0EPVXUMA1 | Infineon Technologies |  Description: IC REG BUCK ADJ 2.5A TSDSO-14-5 Packaging: Tape & Reel (TR) Package / Case: 14-PowerTSSOP (0.154", 3.90mm Width) Output Type: Adjustable Mounting Type: Surface Mount Number of Outputs: 1 Function: Step-Down Current - Output: 2.5A Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Positive Frequency - Switching: 2.8MHz Voltage - Input (Max): 35V Topology: Buck Supplier Device Package: PG-TSDSO-14-5 Synchronous Rectifier: Yes Voltage - Output (Max): 10V Voltage - Input (Min): 3.7V Voltage - Output (Min/Fixed): 3V Grade: Automotive Qualification: AEC-Q100 | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
|   | IAUC60N04S6N044ATMA1 | Infineon Technologies |  Description: IAUC60N04S6N044ATMA1 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 4.52mOhm @ 30A, 10V Power Dissipation (Max): 42W (Tc) Vgs(th) (Max) @ Id: 3V @ 14µA Supplier Device Package: PG-TDSON-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1042 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
|   | IAUC60N04S6N044ATMA1 | Infineon Technologies |  Description: IAUC60N04S6N044ATMA1 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 4.52mOhm @ 30A, 10V Power Dissipation (Max): 42W (Tc) Vgs(th) (Max) @ Id: 3V @ 14µA Supplier Device Package: PG-TDSON-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1042 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 | на замовлення 7 шт:термін постачання 21-31 дні (днів) | 
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|   | TLE73683EXUMA3 | Infineon Technologies |  Description: OPTIREG PMIC Packaging: Tape & Reel (TR) Package / Case: 36-BSSOP (0.295", 7.50mm Width) Exposed Pad Voltage - Output: 5V, 3.3V/2.6V, 1.3V Mounting Type: Surface Mount Number of Outputs: 3 Voltage - Input: 4.5V ~ 45V Operating Temperature: -40°C ~ 150°C (TJ) Applications: Power Supply, Automotive Applications Supplier Device Package: PG-DSO-36 | на замовлення 4000 шт:термін постачання 21-31 дні (днів) | 
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|   | TLE73683EXUMA3 | Infineon Technologies |  Description: OPTIREG PMIC Packaging: Cut Tape (CT) Package / Case: 36-BSSOP (0.295", 7.50mm Width) Exposed Pad Voltage - Output: 5V, 3.3V/2.6V, 1.3V Mounting Type: Surface Mount Number of Outputs: 3 Voltage - Input: 4.5V ~ 45V Operating Temperature: -40°C ~ 150°C (TJ) Applications: Power Supply, Automotive Applications Supplier Device Package: PG-DSO-36 | на замовлення 4962 шт:термін постачання 21-31 дні (днів) | 
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| FZ1800R12KF4S1 | Infineon Technologies |  Description: IGBT MODULE Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Single Switch Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 1.8kA NTC Thermistor: No Supplier Device Package: AG-IHMB190 IGBT Type: Trench Part Status: Active Current - Collector (Ic) (Max): 2700 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 10500 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 110 nF @ 25 V | на замовлення 77 шт:термін постачання 21-31 дні (днів) | 
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| FZ1800R12KL4C | Infineon Technologies |  Description: IGBT MOD 1200V 2850A IHM190-2-1 Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Single Switch Operating Temperature: -40°C ~ 125°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 1.8kA NTC Thermistor: No Supplier Device Package: AG-IHM190-2-1 Part Status: Active Current - Collector (Ic) (Max): 2850 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 11500 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 135 nF @ 25 V | на замовлення 59 шт:термін постачання 21-31 дні (днів) | 
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|   | BSZ180P03NS3GATMA1 | Infineon Technologies |  Description: MOSFET P-CH 30V 9A/39.6A TSDSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 39.6A (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 20A, 10V Power Dissipation (Max): 2.1W (Ta), 40W (Tc) Vgs(th) (Max) @ Id: 3.1V @ 48µA Supplier Device Package: PG-TSDSON-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2220 pF @ 15 V | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
|   | BSZ180P03NS3GATMA1 | Infineon Technologies |  Description: MOSFET P-CH 30V 9A/39.6A TSDSON Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 39.6A (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 20A, 10V Power Dissipation (Max): 2.1W (Ta), 40W (Tc) Vgs(th) (Max) @ Id: 3.1V @ 48µA Supplier Device Package: PG-TSDSON-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2220 pF @ 15 V | на замовлення 7639 шт:термін постачання 21-31 дні (днів) | 
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| FZ1800R12HP4B9NPSA1 | Infineon Technologies |  Description: INSULATED GATE BIPOLAR TRANSISTO Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Single Switch Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 1.8kA NTC Thermistor: No Supplier Device Package: AG-IHMB190 IGBT Type: Trench Part Status: Active Current - Collector (Ic) (Max): 2700 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 10500 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 110 nF @ 25 V | на замовлення 105 шт:термін постачання 21-31 дні (днів) | 
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|   | FZ1800R17HP4B9HOSA2 | Infineon Technologies |  Description: IGBT MOD 1700V 1800A 11500W MOD Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Single Switch Operating Temperature: -40°C ~ 150°C Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 1800A NTC Thermistor: No Supplier Device Package: Module IGBT Type: Trench Current - Collector (Ic) (Max): 1800 A Voltage - Collector Emitter Breakdown (Max): 1700 V Power - Max: 11500 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 145 nF @ 25 V | на замовлення 33 шт:термін постачання 21-31 дні (днів) | 
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|   | FZ1800R17HP4B29BOSA2 | Infineon Technologies |  Description: IGBT MOD 1700V 1800A AG-IHMB190 Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Single Switch Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 1.8kA NTC Thermistor: No Supplier Device Package: AG-IHMB190 IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 1800 A Voltage - Collector Emitter Breakdown (Max): 1700 V Power - Max: 11500 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 145 nF @ 25 V | на замовлення 172 шт:термін постачання 21-31 дні (днів) | 
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| FZ1800R17HP4_B29 | Infineon Technologies |  Description: FZ1800R17 - IGBT MODULE Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Single Switch Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 1.8kA NTC Thermistor: No Supplier Device Package: AG-IHMB190 IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 1800 A Voltage - Collector Emitter Breakdown (Max): 1700 V Power - Max: 11500 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 145 nF @ 25 V | на замовлення 43 шт:термін постачання 21-31 дні (днів) | 
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| FZ1800R17KE3B2NOSA1 | Infineon Technologies |  Description: IGBT MOD 1700V 2850A 12.5W MOD Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -40°C ~ 125°C Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 1.8kA NTC Thermistor: No Supplier Device Package: Module Current - Collector (Ic) (Max): 2850 A Voltage - Collector Emitter Breakdown (Max): 1700 V Power - Max: 12.5 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 160 nF @ 25 V | на замовлення 232 шт:термін постачання 21-31 дні (днів) | 
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| FZ1800R17KF4NOSA1 | Infineon Technologies |  Description: IGBT MOD 1200V 3560A 13500W MOD Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: 3 Independent Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 2.4kA NTC Thermistor: No Supplier Device Package: Module IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 3560 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 13500 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 150 nF @ 25 V | на замовлення 48 шт:термін постачання 21-31 дні (днів) | 
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| FZ1800R17HE4B9NPSA1 | Infineon Technologies |  Description: INSULATED GATE BIPOLAR TRANSISTO | товару немає в наявності | В кошику од. на суму грн. | |||||||||||||||
|   | IR3595AMTRPBF | Infineon Technologies |  Description: IC REG CTLR BUCK PWM 56QFN Packaging: Tape & Reel (TR) Package / Case: 56-VFQFN Exposed Pad Mounting Type: Surface Mount Supplier Device Package: 56-QFN (7x7) Part Status: Not For New Designs | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
|   | IR3595AMTRPBF | Infineon Technologies |  Description: IC REG CTLR BUCK PWM 56QFN Packaging: Cut Tape (CT) Package / Case: 56-VFQFN Exposed Pad Mounting Type: Surface Mount Supplier Device Package: 56-QFN (7x7) Part Status: Not For New Designs | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
|   | 2N7002L6327HTSA1 | Infineon Technologies |  Description: MOSFET N-CH 60V 300MA SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 300mA (Ta) Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PG-SOT23-PO Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 20 pF @ 25 V | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
|   | BSZ042N04NSG | Infineon Technologies |  Description: MOSFET N-CH 40V 40A TO220AB | на замовлення 47574 шт:термін постачання 21-31 дні (днів) | В кошику од. на суму грн. | ||||||||||||||
|   | ESD230B1W0201E6327XTSA1 | Infineon Technologies |  Description: TVS DIODE 5.5VWM 14VC WLL-2-1 Packaging: Tape & Reel (TR) Package / Case: 0201 (0603 Metric) Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 125°C (TJ) Applications: General Purpose Capacitance @ Frequency: 7pF @ 1MHz Current - Peak Pulse (10/1000µs): 3A (8/20µs) Voltage - Reverse Standoff (Typ): 5.5V (Max) Supplier Device Package: WLL-2-1 Bidirectional Channels: 1 Voltage - Breakdown (Min): 6.05V Voltage - Clamping (Max) @ Ipp: 14V Power - Peak Pulse: 56W | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
|   | IPS514G | Infineon Technologies |  Description: IC PWR SWITCH N-CHAN 1:1 28SOIC Features: Auto Restart Packaging: Tube Package / Case: 28-SOIC (0.295", 7.50mm Width) Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 4 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: High Side Rds On (Typ): 130mOhm Input Type: Non-Inverting Voltage - Load: 5.5V ~ 35V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 850mA Ratio - Input:Output: 1:1 Supplier Device Package: 28-SOIC Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature Part Status: Obsolete | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| IPS50R520CPBKMA1 | Infineon Technologies |  Description: LOW POWER_LEGACY Packaging: Tube Package / Case: TO-251-3 Stub Leads, IPak Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.1A (Tc) Rds On (Max) @ Id, Vgs: 520mOhm @ 3.8A, 10V Power Dissipation (Max): 66W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: PG-TO251-3-11 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 100 V | товару немає в наявності | В кошику од. на суму грн. | |||||||||||||||
|   | IPS50R520CPAKMA1 | Infineon Technologies |  Description: MOSFET N-CH 500V 7.1A TO251-3 Packaging: Bulk Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.1A (Tc) Rds On (Max) @ Id, Vgs: 520mOhm @ 3.8A, 10V Power Dissipation (Max): 66W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: PG-TO251-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 100 V | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| TLE75620EMTXUMA1 | Infineon Technologies |  Description: IC PWR DRIVER N-CHAN 1:8 SSOP14 | товару немає в наявності | В кошику од. на суму грн. | |||||||||||||||
| PEB3265HV1.5 | Infineon Technologies | Description: SLIC FILTER | товару немає в наявності | В кошику од. на суму грн. | |||||||||||||||
|   | PEB 3265 H V1.5 | Infineon Technologies |  Description: IC TELECOM INTERFACE MQFP-64 Packaging: Tray Package / Case: 64-QFP Mounting Type: Surface Mount Function: Dual Channel Subscriber Line Interface Circuit (DuSLIC) Interface: IOM-2, PCM Operating Temperature: 0°C ~ 70°C Voltage - Supply: 3.3V Current - Supply: 105mA Supplier Device Package: P-MQFP-64-1 Number of Circuits: 2 | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
|   | TLD1313ELXUMA1 | Infineon Technologies |  Description: IC LED DRVR LINEAR 120MA 14SSOP Packaging: Cut Tape (CT) Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad Voltage - Output: 40V Mounting Type: Surface Mount Number of Outputs: 3 Type: Linear Operating Temperature: -40°C ~ 150°C (TJ) Current - Output / Channel: 120mA Internal Switch(s): Yes Supplier Device Package: PG-SSOP-14-5 Voltage - Supply (Min): 5.5V Voltage - Supply (Max): 40V Part Status: Active Grade: Automotive | на замовлення 3772 шт:термін постачання 21-31 дні (днів) | 
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|   | TLD1313EL | Infineon Technologies |  Description: IC LED DRVR LINEAR 120MA 14SSOP | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| BGS22X11E6331XUMA1 | Infineon Technologies | Description: DPDT DIFFERENTIAL RF SWITCH Packaging: Bulk | на замовлення 392000 шт:термін постачання 21-31 дні (днів) | 
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|   | 1EDB9275FXUMA1 | Infineon Technologies |  Description: IC GATE DRVR HIGH-SIDE 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Voltage - Supply: 10V ~ 56V Input Type: Inverting High Side Voltage - Max (Bootstrap): 650 V Supplier Device Package: PG-DSO-8 Channel Type: Single Driven Configuration: High-Side Number of Drivers: 2 Gate Type: IGBT, SiC MOSFET Current - Peak Output (Source, Sink): 4A, 8A DigiKey Programmable: Not Verified | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
|   | 1EDB9275FXUMA1 | Infineon Technologies |  Description: IC GATE DRVR HIGH-SIDE 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Voltage - Supply: 10V ~ 56V Input Type: Inverting High Side Voltage - Max (Bootstrap): 650 V Supplier Device Package: PG-DSO-8 Channel Type: Single Driven Configuration: High-Side Number of Drivers: 2 Gate Type: IGBT, SiC MOSFET Current - Peak Output (Source, Sink): 4A, 8A DigiKey Programmable: Not Verified | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
|   | REF10WTXQI4102TOBO1 | Infineon Technologies |  Description: DEV KIT Packaging: Box For Use With/Related Products: 1EDN7512B, BSS138WH, BSZ097N04LS, IFX20002MB V33, XMC6521SC-Q040X, WCDSC006 Frequency: 127.8kHz Type: Transmitter Supplied Contents: Board(s) Part Status: Active Contents: Board(s) Utilized IC / Part: 1EDN7512B, BSS138WH, BSZ097N04LS, IFX20002MB V33, XMC6521SC-Q040X, WCDSC006 | на замовлення 11 шт:термін постачання 21-31 дні (днів) | 
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| IPBE65R075CFD7AATMA1 |  | 
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 32A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 16.4A, 10V
Power Dissipation (Max): 171W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 820µA
Supplier Device Package: PG-TO263-7-3-10
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3288 pF @ 400 V
Qualification: AEC-Q101
    Description: MOSFET N-CH 650V 32A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 16.4A, 10V
Power Dissipation (Max): 171W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 820µA
Supplier Device Package: PG-TO263-7-3-10
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3288 pF @ 400 V
Qualification: AEC-Q101
товару немає в наявності
    В кошику
     од. на суму     грн.
| IPBE65R230CFD7AATMA1 |  | 
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 11A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 5.2A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 260µA
Supplier Device Package: PG-TO263-7-3-10
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1044 pF @ 400 V
Qualification: AEC-Q101
    Description: MOSFET N-CH 650V 11A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 5.2A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 260µA
Supplier Device Package: PG-TO263-7-3-10
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1044 pF @ 400 V
Qualification: AEC-Q101
товару немає в наявності
    В кошику
     од. на суму     грн.
| IPBE65R230CFD7AATMA1 |  | 
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 11A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 5.2A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 260µA
Supplier Device Package: PG-TO263-7-3-10
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1044 pF @ 400 V
Qualification: AEC-Q101
    Description: MOSFET N-CH 650V 11A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 5.2A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 260µA
Supplier Device Package: PG-TO263-7-3-10
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1044 pF @ 400 V
Qualification: AEC-Q101
на замовлення 1505 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 2+ | 229.65 грн | 
| 10+ | 170.47 грн | 
| 100+ | 119.76 грн | 
| 500+ | 99.20 грн | 
| PTMA080302MV1AUMA1 |  | 
Виробник: Infineon Technologies
Description: IC AMP GSM 700MHZ-1GHZ DSO20-63
Packaging: Bulk
Package / Case: 20-SOIC (0.433", 11.00mm Width) Exposed Pad
Mounting Type: Surface Mount
Frequency: 700MHz ~ 1GHz
RF Type: GSM, EDGE
Gain: 30dB
Supplier Device Package: PG-DSO-20-63
Part Status: Obsolete
    Description: IC AMP GSM 700MHZ-1GHZ DSO20-63
Packaging: Bulk
Package / Case: 20-SOIC (0.433", 11.00mm Width) Exposed Pad
Mounting Type: Surface Mount
Frequency: 700MHz ~ 1GHz
RF Type: GSM, EDGE
Gain: 30dB
Supplier Device Package: PG-DSO-20-63
Part Status: Obsolete
на замовлення 166 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 11+ | 2406.40 грн | 
| CY7C1399BL-12ZXCT |  | 
Виробник: Infineon Technologies
Description: IC SRAM 256KBIT PAR 28TSOP I
Packaging: Bulk
Package / Case: 28-TSSOP (0.465", 11.80mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 28-TSOP I
Write Cycle Time - Word, Page: 12ns
Memory Interface: Parallel
Access Time: 12 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
    Description: IC SRAM 256KBIT PAR 28TSOP I
Packaging: Bulk
Package / Case: 28-TSSOP (0.465", 11.80mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 28-TSOP I
Write Cycle Time - Word, Page: 12ns
Memory Interface: Parallel
Access Time: 12 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
на замовлення 4500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 423+ | 53.96 грн | 
| CY25811ZXCT |  | 
Виробник: Infineon Technologies
Description: IC CLOCK GEN 3.3V SS 8-TSSOP
    Description: IC CLOCK GEN 3.3V SS 8-TSSOP
на замовлення 6860 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 219+ | 103.45 грн | 
| BSC0502NSIATMA1 |  | 
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 26A/100A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 43W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 15 V
    Description: MOSFET N-CH 30V 26A/100A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 43W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 15 V
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 5000+ | 38.33 грн | 
| BSC0502NSIATMA1 |  | 
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 26A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 43W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 15 V
    Description: MOSFET N-CH 30V 26A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 43W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 15 V
на замовлення 23737 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 3+ | 144.57 грн | 
| 10+ | 88.70 грн | 
| 100+ | 59.70 грн | 
| 500+ | 44.39 грн | 
| 1000+ | 40.65 грн | 
| 2000+ | 37.50 грн | 
| KP229E2701XTMA1 |  | 
Виробник: Infineon Technologies
Description: SENSOR 43.51PSIA 4.65V DSOF8
Features: Amplified Output, Temperature Compensated
Packaging: Cut Tape (CT)
Package / Case: 8-SMD Module
Output Type: Analog Voltage
Mounting Type: Surface Mount
Output: 0.4 V ~ 4.65 V
Operating Pressure: 1.45PSI ~ 43.51PSI (10kPa ~ 300kPa)
Pressure Type: Absolute
Accuracy: ±0.544PSI (±3.75kPa)
Operating Temperature: -40°C ~ 140°C
Termination Style: SMD (SMT) Tab
Voltage - Supply: 4.5V ~ 5.5V
Applications: Board Mount
Supplier Device Package: PG-DSOF-8-16
Port Style: No Port
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
    Description: SENSOR 43.51PSIA 4.65V DSOF8
Features: Amplified Output, Temperature Compensated
Packaging: Cut Tape (CT)
Package / Case: 8-SMD Module
Output Type: Analog Voltage
Mounting Type: Surface Mount
Output: 0.4 V ~ 4.65 V
Operating Pressure: 1.45PSI ~ 43.51PSI (10kPa ~ 300kPa)
Pressure Type: Absolute
Accuracy: ±0.544PSI (±3.75kPa)
Operating Temperature: -40°C ~ 140°C
Termination Style: SMD (SMT) Tab
Voltage - Supply: 4.5V ~ 5.5V
Applications: Board Mount
Supplier Device Package: PG-DSOF-8-16
Port Style: No Port
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
на замовлення 7046 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 2+ | 264.35 грн | 
| 5+ | 227.51 грн | 
| 10+ | 217.65 грн | 
| 25+ | 193.09 грн | 
| 50+ | 185.49 грн | 
| 100+ | 178.51 грн | 
| 500+ | 161.77 грн | 
| IRLR8721TRPBF-1 |  | 
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 65A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 25A, 10V
Power Dissipation (Max): 65W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 15 V
    Description: MOSFET N-CH 30V 65A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 25A, 10V
Power Dissipation (Max): 65W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 15 V
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| XC167CI32F40FBBAKXUMA1 |  | 
Виробник: Infineon Technologies
Description: IC MCU 16BIT 256KB FLASH 144TQFP
    Description: IC MCU 16BIT 256KB FLASH 144TQFP
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| TLI4906L |  | 
Виробник: Infineon Technologies
Description: TLI4906 - HALL SWITCH
Features: Temperature Compensated
Packaging: Bulk
Package / Case: 3-SSIP, SSO-3-02
Output Type: Open Drain
Polarization: South Pole
Mounting Type: Through Hole
Function: Unipolar Switch
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 18V
Technology: Hall Effect
Sensing Range: 18mT Trip, 5mT Release
Current - Output (Max): 20mA
Current - Supply (Max): 6mA
Supplier Device Package: PG-SSO-3-2
Test Condition: 25°C
Part Status: Active
    Description: TLI4906 - HALL SWITCH
Features: Temperature Compensated
Packaging: Bulk
Package / Case: 3-SSIP, SSO-3-02
Output Type: Open Drain
Polarization: South Pole
Mounting Type: Through Hole
Function: Unipolar Switch
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 18V
Technology: Hall Effect
Sensing Range: 18mT Trip, 5mT Release
Current - Output (Max): 20mA
Current - Supply (Max): 6mA
Supplier Device Package: PG-SSO-3-2
Test Condition: 25°C
Part Status: Active
на замовлення 19999 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 739+ | 30.88 грн | 
| SAK-C868-1SG BA |  | 
Виробник: Infineon Technologies
Description: IC MCU 8BIT 8KB RAM DSO28
Packaging: Tape & Reel (TR)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: RAM
Core Processor: C800
Data Converters: A/D 5x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 3.6V
Connectivity: UART/USART
Peripherals: Brown-out Detect/Reset, PWM, WDT
Supplier Device Package: P-DSO-28
Part Status: Obsolete
Number of I/O: 18
DigiKey Programmable: Not Verified
    Description: IC MCU 8BIT 8KB RAM DSO28
Packaging: Tape & Reel (TR)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: RAM
Core Processor: C800
Data Converters: A/D 5x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 3.6V
Connectivity: UART/USART
Peripherals: Brown-out Detect/Reset, PWM, WDT
Supplier Device Package: P-DSO-28
Part Status: Obsolete
Number of I/O: 18
DigiKey Programmable: Not Verified
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| TLE9255WSKXUMA2 |  | 
Виробник: Infineon Technologies
Description: IC TRANSCEIVER FULL DSO-14
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4.75V ~ 5.25V
Data Rate: 1Mbps
Protocol: CANbus
Supplier Device Package: PG-DSO-14
Duplex: Full
Part Status: Active
Grade: Automotive
    Description: IC TRANSCEIVER FULL DSO-14
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4.75V ~ 5.25V
Data Rate: 1Mbps
Protocol: CANbus
Supplier Device Package: PG-DSO-14
Duplex: Full
Part Status: Active
Grade: Automotive
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 2500+ | 102.07 грн | 
| 5000+ | 94.64 грн | 
| TLE9255WSKXUMA2 |  | 
Виробник: Infineon Technologies
Description: IC TRANSCEIVER FULL DSO-14
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4.75V ~ 5.25V
Data Rate: 1Mbps
Protocol: CANbus
Supplier Device Package: PG-DSO-14
Duplex: Full
Part Status: Active
Grade: Automotive
    Description: IC TRANSCEIVER FULL DSO-14
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4.75V ~ 5.25V
Data Rate: 1Mbps
Protocol: CANbus
Supplier Device Package: PG-DSO-14
Duplex: Full
Part Status: Active
Grade: Automotive
на замовлення 7063 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 2+ | 223.04 грн | 
| 10+ | 192.91 грн | 
| 25+ | 182.01 грн | 
| 100+ | 145.53 грн | 
| 250+ | 136.65 грн | 
| 500+ | 119.57 грн | 
| 1000+ | 97.45 грн | 
| BAS70-04E6327 |  | 
Виробник: Infineon Technologies
Description: BAS70 - HIGH SPEED SWITCHING, CL
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 100 ps
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 70mA (DC)
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
    Description: BAS70 - HIGH SPEED SWITCHING, CL
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 100 ps
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 70mA (DC)
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
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| IRL520NSTRLPBF |  | 
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 10A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 6A, 10V
Power Dissipation (Max): 3.8W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: D2PAK
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V
    Description: MOSFET N-CH 100V 10A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 6A, 10V
Power Dissipation (Max): 3.8W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: D2PAK
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V
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| AIKW50N65RF5XKSA1 |  | 
Виробник: Infineon Technologies
Description: IGBT TRENCH FS 650V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 20ns/156ns
Switching Energy: 310µJ (on), 120µJ (off)
Test Condition: 400V, 25A, 12Ohm, 15V
Gate Charge: 109 nC
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 250 W
Qualification: AEC-Q101
    Description: IGBT TRENCH FS 650V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 20ns/156ns
Switching Energy: 310µJ (on), 120µJ (off)
Test Condition: 400V, 25A, 12Ohm, 15V
Gate Charge: 109 nC
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 250 W
Qualification: AEC-Q101
на замовлення 190 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 1+ | 499.78 грн | 
| 10+ | 371.02 грн | 
| 30+ | 338.75 грн | 
| 120+ | 290.91 грн | 
| BTS500201TADATMA1 |  | 
Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 3mOhm
Input Type: Non-Inverting
Voltage - Load: 8V ~ 18V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 29A
Ratio - Input:Output: 1:1
Supplier Device Package: P/PG-TO-263-7-10
Fault Protection: Over Temperature, Over Voltage, Reverse Battery, Short Circuit
Grade: Automotive
Qualification: AEC-Q100
    Description: IC PWR SWITCH N-CHAN 1:1 TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 3mOhm
Input Type: Non-Inverting
Voltage - Load: 8V ~ 18V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 29A
Ratio - Input:Output: 1:1
Supplier Device Package: P/PG-TO-263-7-10
Fault Protection: Over Temperature, Over Voltage, Reverse Battery, Short Circuit
Grade: Automotive
Qualification: AEC-Q100
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| IFX1040SJXUMA1 |  | 
Виробник: Infineon Technologies
Description: IC TRANSCEIVER FULL 1/1 DSO-8
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.75V ~ 5.25V
Number of Drivers/Receivers: 1/1
Data Rate: 1MBd
Protocol: CANbus
Supplier Device Package: PG-DSO-8
Receiver Hysteresis: 200 mV
Duplex: Full
    Description: IC TRANSCEIVER FULL 1/1 DSO-8
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.75V ~ 5.25V
Number of Drivers/Receivers: 1/1
Data Rate: 1MBd
Protocol: CANbus
Supplier Device Package: PG-DSO-8
Receiver Hysteresis: 200 mV
Duplex: Full
на замовлення 40000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 452+ | 50.35 грн | 
| TLE8457ASJXUMA1 |  | 
Виробник: Infineon Technologies
Description: IC TRANSCEIVER 1/1 DSO-8
    Description: IC TRANSCEIVER 1/1 DSO-8
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| CY7C4205-10AXC |  | 
Виробник: Infineon Technologies
Description: IC FIFO SYNC 256X18 8NS 64TQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Function: Synchronous
Memory Size: 4.5K (256 x 18)
Operating Temperature: 0°C ~ 70°C
Data Rate: 100MHz
Access Time: 8ns
Current - Supply (Max): 45mA
Supplier Device Package: 64-TQFP (14x14)
Bus Directional: Uni-Directional
Expansion Type: Depth, Width
Programmable Flags Support: Yes
Retransmit Capability: Yes
FWFT Support: No
Part Status: Obsolete
Voltage - Supply: 4.5 V ~ 5.5 V
DigiKey Programmable: Not Verified
    Description: IC FIFO SYNC 256X18 8NS 64TQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Function: Synchronous
Memory Size: 4.5K (256 x 18)
Operating Temperature: 0°C ~ 70°C
Data Rate: 100MHz
Access Time: 8ns
Current - Supply (Max): 45mA
Supplier Device Package: 64-TQFP (14x14)
Bus Directional: Uni-Directional
Expansion Type: Depth, Width
Programmable Flags Support: Yes
Retransmit Capability: Yes
FWFT Support: No
Part Status: Obsolete
Voltage - Supply: 4.5 V ~ 5.5 V
DigiKey Programmable: Not Verified
на замовлення 1057 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 22+ | 1077.45 грн | 
| CY7C4205-10AC | 
Виробник: Infineon Technologies
Description: IC FIFO SYNC 256X18 8NS 64TQFP
Packaging: Bag
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Function: Synchronous
Memory Size: 4.5K (256 x 18)
Operating Temperature: 0°C ~ 70°C
Data Rate: 100MHz
Access Time: 8ns
Current - Supply (Max): 45mA
Supplier Device Package: 64-TQFP (14x14)
Bus Directional: Uni-Directional
Expansion Type: Depth, Width
Programmable Flags Support: Yes
Retransmit Capability: Yes
FWFT Support: No
Part Status: Obsolete
Voltage - Supply: 4.5 V ~ 5.5 V
DigiKey Programmable: Not Verified
    Description: IC FIFO SYNC 256X18 8NS 64TQFP
Packaging: Bag
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Function: Synchronous
Memory Size: 4.5K (256 x 18)
Operating Temperature: 0°C ~ 70°C
Data Rate: 100MHz
Access Time: 8ns
Current - Supply (Max): 45mA
Supplier Device Package: 64-TQFP (14x14)
Bus Directional: Uni-Directional
Expansion Type: Depth, Width
Programmable Flags Support: Yes
Retransmit Capability: Yes
FWFT Support: No
Part Status: Obsolete
Voltage - Supply: 4.5 V ~ 5.5 V
DigiKey Programmable: Not Verified
на замовлення 92 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 38+ | 617.22 грн | 
| CY7C4291V-15JXC |  | 
Виробник: Infineon Technologies
Description: IC FIFO SYNC 128KX9 10NS 32PLCC
Packaging: Bulk
Package / Case: 32-LCC (J-Lead)
Mounting Type: Surface Mount
Function: Synchronous
Memory Size: 1.125M (128K x 9)
Operating Temperature: 0°C ~ 70°C
Data Rate: 66.7MHz
Access Time: 10ns
Current - Supply (Max): 25mA
Supplier Device Package: 32-PLCC (11.43x13.97)
Bus Directional: Uni-Directional
Expansion Type: Depth, Width
Programmable Flags Support: Yes
Retransmit Capability: No
FWFT Support: No
Voltage - Supply: 3 V ~ 3.6 V
DigiKey Programmable: Not Verified
    Description: IC FIFO SYNC 128KX9 10NS 32PLCC
Packaging: Bulk
Package / Case: 32-LCC (J-Lead)
Mounting Type: Surface Mount
Function: Synchronous
Memory Size: 1.125M (128K x 9)
Operating Temperature: 0°C ~ 70°C
Data Rate: 66.7MHz
Access Time: 10ns
Current - Supply (Max): 25mA
Supplier Device Package: 32-PLCC (11.43x13.97)
Bus Directional: Uni-Directional
Expansion Type: Depth, Width
Programmable Flags Support: Yes
Retransmit Capability: No
FWFT Support: No
Voltage - Supply: 3 V ~ 3.6 V
DigiKey Programmable: Not Verified
на замовлення 23 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 11+ | 2362.62 грн | 
| PVDZ172NS-TPBF |  | 
Виробник: Infineon Technologies
Description: SSR RELAY SPST-NO 1.5A 0-60V
Packaging: Bulk
Package / Case: 8-SMD (0.300", 7.62mm), 4 Leads
Output Type: DC
Mounting Type: Surface Mount
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: Gull Wing
Load Current: 1.5 A
Approval Agency: UL
Supplier Device Package: 8-SMD
Part Status: Active
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 250 MOhms
    Description: SSR RELAY SPST-NO 1.5A 0-60V
Packaging: Bulk
Package / Case: 8-SMD (0.300", 7.62mm), 4 Leads
Output Type: DC
Mounting Type: Surface Mount
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: Gull Wing
Load Current: 1.5 A
Approval Agency: UL
Supplier Device Package: 8-SMD
Part Status: Active
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 250 MOhms
на замовлення 848 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 46+ | 517.98 грн | 
| IDD06SG60CXTMA2 |  | 
Виробник: Infineon Technologies
Description: DIODE SIL CARB 600V 6A PGTO2523
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 130pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: PG-TO252-3
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 6 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
    Description: DIODE SIL CARB 600V 6A PGTO2523
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 130pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: PG-TO252-3
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 6 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 2500+ | 103.00 грн | 
| IDD06SG60CXTMA2 |  | 
Виробник: Infineon Technologies
Description: DIODE SIL CARB 600V 6A PGTO2523
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 130pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: PG-TO252-3
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 6 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
    Description: DIODE SIL CARB 600V 6A PGTO2523
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 130pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: PG-TO252-3
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 6 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
на замовлення 9208 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 2+ | 307.31 грн | 
| 10+ | 193.94 грн | 
| 100+ | 136.09 грн | 
| 500+ | 104.55 грн | 
| 1000+ | 97.11 грн | 
| TLS4125D0EPVXUMA1 |  | 
Виробник: Infineon Technologies
Description: IC REG BUCK ADJ 2.5A TSDSO-14-5
Packaging: Tape & Reel (TR)
Package / Case: 14-PowerTSSOP (0.154", 3.90mm Width)
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 2.5A
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: 2.8MHz
Voltage - Input (Max): 35V
Topology: Buck
Supplier Device Package: PG-TSDSO-14-5
Synchronous Rectifier: Yes
Voltage - Output (Max): 10V
Voltage - Input (Min): 3.7V
Voltage - Output (Min/Fixed): 3V
Grade: Automotive
Qualification: AEC-Q100
    Description: IC REG BUCK ADJ 2.5A TSDSO-14-5
Packaging: Tape & Reel (TR)
Package / Case: 14-PowerTSSOP (0.154", 3.90mm Width)
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 2.5A
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: 2.8MHz
Voltage - Input (Max): 35V
Topology: Buck
Supplier Device Package: PG-TSDSO-14-5
Synchronous Rectifier: Yes
Voltage - Output (Max): 10V
Voltage - Input (Min): 3.7V
Voltage - Output (Min/Fixed): 3V
Grade: Automotive
Qualification: AEC-Q100
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| IAUC60N04S6N044ATMA1 |  | 
Виробник: Infineon Technologies
Description: IAUC60N04S6N044ATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 4.52mOhm @ 30A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 3V @ 14µA
Supplier Device Package: PG-TDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1042 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
    Description: IAUC60N04S6N044ATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 4.52mOhm @ 30A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 3V @ 14µA
Supplier Device Package: PG-TDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1042 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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| IAUC60N04S6N044ATMA1 |  | 
Виробник: Infineon Technologies
Description: IAUC60N04S6N044ATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 4.52mOhm @ 30A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 3V @ 14µA
Supplier Device Package: PG-TDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1042 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
    Description: IAUC60N04S6N044ATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 4.52mOhm @ 30A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 3V @ 14µA
Supplier Device Package: PG-TDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1042 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 7 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 4+ | 93.35 грн | 
| TLE73683EXUMA3 |  | 
Виробник: Infineon Technologies
Description: OPTIREG PMIC
Packaging: Tape & Reel (TR)
Package / Case: 36-BSSOP (0.295", 7.50mm Width) Exposed Pad
Voltage - Output: 5V, 3.3V/2.6V, 1.3V
Mounting Type: Surface Mount
Number of Outputs: 3
Voltage - Input: 4.5V ~ 45V
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Power Supply, Automotive Applications
Supplier Device Package: PG-DSO-36
    Description: OPTIREG PMIC
Packaging: Tape & Reel (TR)
Package / Case: 36-BSSOP (0.295", 7.50mm Width) Exposed Pad
Voltage - Output: 5V, 3.3V/2.6V, 1.3V
Mounting Type: Surface Mount
Number of Outputs: 3
Voltage - Input: 4.5V ~ 45V
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Power Supply, Automotive Applications
Supplier Device Package: PG-DSO-36
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 1000+ | 307.93 грн | 
| TLE73683EXUMA3 |  | 
Виробник: Infineon Technologies
Description: OPTIREG PMIC
Packaging: Cut Tape (CT)
Package / Case: 36-BSSOP (0.295", 7.50mm Width) Exposed Pad
Voltage - Output: 5V, 3.3V/2.6V, 1.3V
Mounting Type: Surface Mount
Number of Outputs: 3
Voltage - Input: 4.5V ~ 45V
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Power Supply, Automotive Applications
Supplier Device Package: PG-DSO-36
    Description: OPTIREG PMIC
Packaging: Cut Tape (CT)
Package / Case: 36-BSSOP (0.295", 7.50mm Width) Exposed Pad
Voltage - Output: 5V, 3.3V/2.6V, 1.3V
Mounting Type: Surface Mount
Number of Outputs: 3
Voltage - Input: 4.5V ~ 45V
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Power Supply, Automotive Applications
Supplier Device Package: PG-DSO-36
на замовлення 4962 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 1+ | 571.65 грн | 
| 10+ | 426.07 грн | 
| 25+ | 395.01 грн | 
| 100+ | 338.73 грн | 
| 250+ | 323.49 грн | 
| 500+ | 314.30 грн | 
| FZ1800R12KF4S1 |  | 
Виробник: Infineon Technologies
Description: IGBT MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 1.8kA
NTC Thermistor: No
Supplier Device Package: AG-IHMB190
IGBT Type: Trench
Part Status: Active
Current - Collector (Ic) (Max): 2700 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 10500 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 110 nF @ 25 V
    Description: IGBT MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 1.8kA
NTC Thermistor: No
Supplier Device Package: AG-IHMB190
IGBT Type: Trench
Part Status: Active
Current - Collector (Ic) (Max): 2700 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 10500 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 110 nF @ 25 V
на замовлення 77 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 1+ | 87272.29 грн | 
| FZ1800R12KL4C |  | 
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 2850A IHM190-2-1
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 1.8kA
NTC Thermistor: No
Supplier Device Package: AG-IHM190-2-1
Part Status: Active
Current - Collector (Ic) (Max): 2850 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 11500 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 135 nF @ 25 V
    Description: IGBT MOD 1200V 2850A IHM190-2-1
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 1.8kA
NTC Thermistor: No
Supplier Device Package: AG-IHM190-2-1
Part Status: Active
Current - Collector (Ic) (Max): 2850 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 11500 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 135 nF @ 25 V
на замовлення 59 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 1+ | 98960.63 грн | 
| BSZ180P03NS3GATMA1 |  | 
Виробник: Infineon Technologies
Description: MOSFET P-CH 30V 9A/39.6A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 39.6A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 3.1V @ 48µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2220 pF @ 15 V
    Description: MOSFET P-CH 30V 9A/39.6A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 39.6A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 3.1V @ 48µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2220 pF @ 15 V
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| BSZ180P03NS3GATMA1 |  | 
Виробник: Infineon Technologies
Description: MOSFET P-CH 30V 9A/39.6A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 39.6A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 3.1V @ 48µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2220 pF @ 15 V
    Description: MOSFET P-CH 30V 9A/39.6A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 39.6A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 3.1V @ 48µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2220 pF @ 15 V
на замовлення 7639 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 5+ | 71.87 грн | 
| 10+ | 44.71 грн | 
| 100+ | 30.50 грн | 
| 500+ | 23.20 грн | 
| 1000+ | 20.10 грн | 
| 2000+ | 19.13 грн | 
| FZ1800R12HP4B9NPSA1 |  | 
Виробник: Infineon Technologies
Description: INSULATED GATE BIPOLAR TRANSISTO
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 1.8kA
NTC Thermistor: No
Supplier Device Package: AG-IHMB190
IGBT Type: Trench
Part Status: Active
Current - Collector (Ic) (Max): 2700 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 10500 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 110 nF @ 25 V
    Description: INSULATED GATE BIPOLAR TRANSISTO
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 1.8kA
NTC Thermistor: No
Supplier Device Package: AG-IHMB190
IGBT Type: Trench
Part Status: Active
Current - Collector (Ic) (Max): 2700 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 10500 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 110 nF @ 25 V
на замовлення 105 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 1+ | 69389.92 грн | 
| FZ1800R17HP4B9HOSA2 |  | 
Виробник: Infineon Technologies
Description: IGBT MOD 1700V 1800A 11500W MOD
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 1800A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench
Current - Collector (Ic) (Max): 1800 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 11500 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 145 nF @ 25 V
    Description: IGBT MOD 1700V 1800A 11500W MOD
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 1800A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench
Current - Collector (Ic) (Max): 1800 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 11500 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 145 nF @ 25 V
на замовлення 33 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 1+ | 64017.85 грн | 
| FZ1800R17HP4B29BOSA2 |  | 
Виробник: Infineon Technologies
Description: IGBT MOD 1700V 1800A AG-IHMB190
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 1.8kA
NTC Thermistor: No
Supplier Device Package: AG-IHMB190
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 1800 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 11500 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 145 nF @ 25 V
    Description: IGBT MOD 1700V 1800A AG-IHMB190
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 1.8kA
NTC Thermistor: No
Supplier Device Package: AG-IHMB190
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 1800 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 11500 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 145 nF @ 25 V
на замовлення 172 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 1+ | 90539.48 грн | 
| FZ1800R17HP4_B29 |  | 
Виробник: Infineon Technologies
Description: FZ1800R17 - IGBT MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 1.8kA
NTC Thermistor: No
Supplier Device Package: AG-IHMB190
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 1800 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 11500 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 145 nF @ 25 V
    Description: FZ1800R17 - IGBT MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 1.8kA
NTC Thermistor: No
Supplier Device Package: AG-IHMB190
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 1800 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 11500 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 145 nF @ 25 V
на замовлення 43 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 1+ | 113895.52 грн | 
| FZ1800R17KE3B2NOSA1 |  | 
Виробник: Infineon Technologies
Description: IGBT MOD 1700V 2850A 12.5W MOD
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 1.8kA
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 2850 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 12.5 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 160 nF @ 25 V
    Description: IGBT MOD 1700V 2850A 12.5W MOD
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 1.8kA
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 2850 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 12.5 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 160 nF @ 25 V
на замовлення 232 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 1+ | 113644.39 грн | 
| FZ1800R17KF4NOSA1 |  | 
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 3560A 13500W MOD
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 3 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 2.4kA
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 3560 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 13500 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 150 nF @ 25 V
    Description: IGBT MOD 1200V 3560A 13500W MOD
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 3 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 2.4kA
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 3560 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 13500 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 150 nF @ 25 V
на замовлення 48 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 1+ | 137470.48 грн | 
| FZ1800R17HE4B9NPSA1 |  | 
Виробник: Infineon Technologies
Description: INSULATED GATE BIPOLAR TRANSISTO
    Description: INSULATED GATE BIPOLAR TRANSISTO
товару немає в наявності
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| IR3595AMTRPBF |  | 
Виробник: Infineon Technologies
Description: IC REG CTLR BUCK PWM 56QFN
Packaging: Tape & Reel (TR)
Package / Case: 56-VFQFN Exposed Pad
Mounting Type: Surface Mount
Supplier Device Package: 56-QFN (7x7)
Part Status: Not For New Designs
    Description: IC REG CTLR BUCK PWM 56QFN
Packaging: Tape & Reel (TR)
Package / Case: 56-VFQFN Exposed Pad
Mounting Type: Surface Mount
Supplier Device Package: 56-QFN (7x7)
Part Status: Not For New Designs
товару немає в наявності
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| IR3595AMTRPBF |  | 
Виробник: Infineon Technologies
Description: IC REG CTLR BUCK PWM 56QFN
Packaging: Cut Tape (CT)
Package / Case: 56-VFQFN Exposed Pad
Mounting Type: Surface Mount
Supplier Device Package: 56-QFN (7x7)
Part Status: Not For New Designs
    Description: IC REG CTLR BUCK PWM 56QFN
Packaging: Cut Tape (CT)
Package / Case: 56-VFQFN Exposed Pad
Mounting Type: Surface Mount
Supplier Device Package: 56-QFN (7x7)
Part Status: Not For New Designs
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| 2N7002L6327HTSA1 |  | 
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 300MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PG-SOT23-PO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 20 pF @ 25 V
    Description: MOSFET N-CH 60V 300MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PG-SOT23-PO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 20 pF @ 25 V
товару немає в наявності
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| BSZ042N04NSG |  | 
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 40A TO220AB
    Description: MOSFET N-CH 40V 40A TO220AB
на замовлення 47574 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| ESD230B1W0201E6327XTSA1 |  | 
Виробник: Infineon Technologies
Description: TVS DIODE 5.5VWM 14VC WLL-2-1
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 7pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: WLL-2-1
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6.05V
Voltage - Clamping (Max) @ Ipp: 14V
Power - Peak Pulse: 56W
    Description: TVS DIODE 5.5VWM 14VC WLL-2-1
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 7pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: WLL-2-1
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6.05V
Voltage - Clamping (Max) @ Ipp: 14V
Power - Peak Pulse: 56W
товару немає в наявності
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| IPS514G |  | 
Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 28SOIC
Features: Auto Restart
Packaging: Tube
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 4
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 130mOhm
Input Type: Non-Inverting
Voltage - Load: 5.5V ~ 35V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 850mA
Ratio - Input:Output: 1:1
Supplier Device Package: 28-SOIC
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature
Part Status: Obsolete
    Description: IC PWR SWITCH N-CHAN 1:1 28SOIC
Features: Auto Restart
Packaging: Tube
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 4
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 130mOhm
Input Type: Non-Inverting
Voltage - Load: 5.5V ~ 35V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 850mA
Ratio - Input:Output: 1:1
Supplier Device Package: 28-SOIC
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature
Part Status: Obsolete
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| IPS50R520CPBKMA1 |  | 
Виробник: Infineon Technologies
Description: LOW POWER_LEGACY
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.1A (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 3.8A, 10V
Power Dissipation (Max): 66W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PG-TO251-3-11
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 100 V
    Description: LOW POWER_LEGACY
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.1A (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 3.8A, 10V
Power Dissipation (Max): 66W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PG-TO251-3-11
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 100 V
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| IPS50R520CPAKMA1 |  | 
Виробник: Infineon Technologies
Description: MOSFET N-CH 500V 7.1A TO251-3
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.1A (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 3.8A, 10V
Power Dissipation (Max): 66W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 100 V
    Description: MOSFET N-CH 500V 7.1A TO251-3
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.1A (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 3.8A, 10V
Power Dissipation (Max): 66W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 100 V
товару немає в наявності
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| TLE75620EMTXUMA1 |  | 
Виробник: Infineon Technologies
Description: IC PWR DRIVER N-CHAN 1:8 SSOP14
    Description: IC PWR DRIVER N-CHAN 1:8 SSOP14
товару немає в наявності
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| PEB3265HV1.5 | 
Виробник: Infineon Technologies
Description: SLIC FILTER
    Description: SLIC FILTER
товару немає в наявності
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| PEB 3265 H V1.5 |  | 
Виробник: Infineon Technologies
Description: IC TELECOM INTERFACE MQFP-64
Packaging: Tray
Package / Case: 64-QFP
Mounting Type: Surface Mount
Function: Dual Channel Subscriber Line Interface Circuit (DuSLIC)
Interface: IOM-2, PCM
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.3V
Current - Supply: 105mA
Supplier Device Package: P-MQFP-64-1
Number of Circuits: 2
    Description: IC TELECOM INTERFACE MQFP-64
Packaging: Tray
Package / Case: 64-QFP
Mounting Type: Surface Mount
Function: Dual Channel Subscriber Line Interface Circuit (DuSLIC)
Interface: IOM-2, PCM
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.3V
Current - Supply: 105mA
Supplier Device Package: P-MQFP-64-1
Number of Circuits: 2
товару немає в наявності
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| TLD1313ELXUMA1 |  | 
Виробник: Infineon Technologies
Description: IC LED DRVR LINEAR 120MA 14SSOP
Packaging: Cut Tape (CT)
Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad
Voltage - Output: 40V
Mounting Type: Surface Mount
Number of Outputs: 3
Type: Linear
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output / Channel: 120mA
Internal Switch(s): Yes
Supplier Device Package: PG-SSOP-14-5
Voltage - Supply (Min): 5.5V
Voltage - Supply (Max): 40V
Part Status: Active
Grade: Automotive
    Description: IC LED DRVR LINEAR 120MA 14SSOP
Packaging: Cut Tape (CT)
Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad
Voltage - Output: 40V
Mounting Type: Surface Mount
Number of Outputs: 3
Type: Linear
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output / Channel: 120mA
Internal Switch(s): Yes
Supplier Device Package: PG-SSOP-14-5
Voltage - Supply (Min): 5.5V
Voltage - Supply (Max): 40V
Part Status: Active
Grade: Automotive
на замовлення 3772 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 4+ | 90.87 грн | 
| 10+ | 63.32 грн | 
| 25+ | 57.24 грн | 
| 100+ | 47.47 грн | 
| 250+ | 44.48 грн | 
| 500+ | 42.69 грн | 
| 1000+ | 40.53 грн | 
| TLD1313EL |  | 
Виробник: Infineon Technologies
Description: IC LED DRVR LINEAR 120MA 14SSOP
    Description: IC LED DRVR LINEAR 120MA 14SSOP
товару немає в наявності
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| BGS22X11E6331XUMA1 | 
на замовлення 392000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 1385+ | 16.20 грн | 
| 1EDB9275FXUMA1 |  | 
Виробник: Infineon Technologies
Description: IC GATE DRVR HIGH-SIDE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Voltage - Supply: 10V ~ 56V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-8
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 2
Gate Type: IGBT, SiC MOSFET
Current - Peak Output (Source, Sink): 4A, 8A
DigiKey Programmable: Not Verified
    Description: IC GATE DRVR HIGH-SIDE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Voltage - Supply: 10V ~ 56V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-8
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 2
Gate Type: IGBT, SiC MOSFET
Current - Peak Output (Source, Sink): 4A, 8A
DigiKey Programmable: Not Verified
товару немає в наявності
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| 1EDB9275FXUMA1 |  | 
Виробник: Infineon Technologies
Description: IC GATE DRVR HIGH-SIDE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Voltage - Supply: 10V ~ 56V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-8
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 2
Gate Type: IGBT, SiC MOSFET
Current - Peak Output (Source, Sink): 4A, 8A
DigiKey Programmable: Not Verified
    Description: IC GATE DRVR HIGH-SIDE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Voltage - Supply: 10V ~ 56V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-8
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 2
Gate Type: IGBT, SiC MOSFET
Current - Peak Output (Source, Sink): 4A, 8A
DigiKey Programmable: Not Verified
товару немає в наявності
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| REF10WTXQI4102TOBO1 |  | 
Виробник: Infineon Technologies
Description: DEV KIT
Packaging: Box
For Use With/Related Products: 1EDN7512B, BSS138WH, BSZ097N04LS, IFX20002MB V33, XMC6521SC-Q040X, WCDSC006
Frequency: 127.8kHz
Type: Transmitter
Supplied Contents: Board(s)
Part Status: Active
Contents: Board(s)
Utilized IC / Part: 1EDN7512B, BSS138WH, BSZ097N04LS, IFX20002MB V33, XMC6521SC-Q040X, WCDSC006
    Description: DEV KIT
Packaging: Box
For Use With/Related Products: 1EDN7512B, BSS138WH, BSZ097N04LS, IFX20002MB V33, XMC6521SC-Q040X, WCDSC006
Frequency: 127.8kHz
Type: Transmitter
Supplied Contents: Board(s)
Part Status: Active
Contents: Board(s)
Utilized IC / Part: 1EDN7512B, BSS138WH, BSZ097N04LS, IFX20002MB V33, XMC6521SC-Q040X, WCDSC006
на замовлення 11 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 1+ | 17531.28 грн |