Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (124748) > Сторінка 406 з 2080
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||
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| 111-4183PBF | Infineon Technologies | Description: IC REG BUCK CTRLR SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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KX8664FRIBE | Infineon Technologies |
Description: XC800 I-FAMILY 8051 8-BIT MCUDigiKey Programmable: Not Verified Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IPB147N03LGATMA1 | Infineon Technologies |
Description: MOSFET N-CH 30V 20A D2PAK |
на замовлення 18000 шт: термін постачання 21-31 дні (днів) |
Мінімальне замовлення: 1023 шт В кошику од. на суму грн. | ||||||||||||||||
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TC397XX256F300SBCKXUMA1 | Infineon Technologies |
Description: IC MCU 32BIT 16MB FLASH 292LFBGADigiKey Programmable: Not Verified Part Status: Obsolete Supplier Device Package: PG-LFBGA-292-10 Peripherals: DMA, I²S, PWM, WDT Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I²C, LINbus, MSC, PSI, QSPI, SENT Voltage - Supply (Vcc/Vdd): 3.3V, 5V Core Size: 32-Bit 6-Core Core Processor: TriCore™ Program Memory Type: FLASH Oscillator Type: Internal Operating Temperature: -40°C ~ 125°C (TA) RAM Size: 6.75M x 8 Program Memory Size: 16MB (16M x 8) Speed: 300MHz Mounting Type: Surface Mount Package / Case: 292-LFBGA Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| TC399XX256F300SBCKXUMA1 | Infineon Technologies |
Description: IC MCU 32BIT 16MB FLASH 516LFBGADigiKey Programmable: Not Verified RAM Size: 6.75M x 8 Program Memory Size: 16MB (16M x 8) Speed: 300MHz Mounting Type: Surface Mount Package / Case: 516-LFBGA Packaging: Tape & Reel (TR) Part Status: Obsolete Supplier Device Package: PG-LFBGA-516-10 Peripherals: DMA, I²S, PWM, WDT Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I²C, LINbus, MSC, PSI, QSPI, SENT Voltage - Supply (Vcc/Vdd): 3.3V, 5V Core Size: 32-Bit 6-Core Core Processor: TriCore™ Program Memory Type: FLASH Oscillator Type: Internal Operating Temperature: -40°C ~ 125°C (TA) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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XC87813FFA5VACKXUMA1 | Infineon Technologies |
Description: IC MCU 8BIT 52KB FLASH 64LQFPDigiKey Programmable: Not Verified Program Memory Type: FLASH Oscillator Type: Internal Operating Temperature: -40°C ~ 125°C (TA) RAM Size: 3.25K x 8 Program Memory Size: 52KB (52K x 8) Speed: 27MHz Mounting Type: Surface Mount Package / Case: 64-LQFP Packaging: Bulk Number of I/O: 40 Part Status: Not For New Designs Supplier Device Package: PG-LQFP-64-4 Peripherals: Brown-out Detect/Reset, POR, PWM, WDT Connectivity: SPI, SSI, UART/USART Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V Core Size: 8-Bit Data Converters: A/D 8x10b Core Processor: XC800 |
на замовлення 8328 шт: термін постачання 21-31 дні (днів) |
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TC212S8F133SCACKXUMA1 | Infineon Technologies |
Description: IC MCU 32BIT 512KB FLASH 80TQFPPackaging: Tape & Reel (TR) Package / Case: 80-TQFP Exposed Pad Mounting Type: Surface Mount Speed: 133MHz Program Memory Size: 512KB (512K x 8) RAM Size: 56K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: External Program Memory Type: FLASH EEPROM Size: 64K x 8 Core Processor: TriCore™ Data Converters: A/D 24x12b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 3.3V Connectivity: CANbus, LINbus, QSPI Peripherals: DMA, WDT Supplier Device Package: PG-TQFP-80-7 Part Status: Active Number of I/O: 59 DigiKey Programmable: Not Verified |
на замовлення 1800 шт: термін постачання 21-31 дні (днів) |
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TC212S8F133SCACKXUMA1 | Infineon Technologies |
Description: IC MCU 32BIT 512KB FLASH 80TQFPPackaging: Cut Tape (CT) Package / Case: 80-TQFP Exposed Pad Mounting Type: Surface Mount Speed: 133MHz Program Memory Size: 512KB (512K x 8) RAM Size: 56K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: External Program Memory Type: FLASH EEPROM Size: 64K x 8 Core Processor: TriCore™ Data Converters: A/D 24x12b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 3.3V Connectivity: CANbus, LINbus, QSPI Peripherals: DMA, WDT Supplier Device Package: PG-TQFP-80-7 Part Status: Active Number of I/O: 59 DigiKey Programmable: Not Verified |
на замовлення 1800 шт: термін постачання 21-31 дні (днів) |
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TC214L8F133NACKXUMA1 | Infineon Technologies |
Description: IC MCU 32BIT 512KB FLASH 144TQFPEEPROM Size: 96K x 8 Program Memory Type: FLASH Oscillator Type: External Operating Temperature: -40°C ~ 125°C (TA) RAM Size: 96K x 8 Program Memory Size: 512KB (512K x 8) Speed: 133MHz Mounting Type: Surface Mount Package / Case: 144-LQFP Exposed Pad Packaging: Cut Tape (CT) DigiKey Programmable: Not Verified Number of I/O: 120 Supplier Device Package: PG-TQFP-144-27 Peripherals: DMA, WDT Connectivity: CANbus, LINbus, QSPI Voltage - Supply (Vcc/Vdd): 3.3V Core Size: 32-Bit Single-Core Data Converters: A/D 24x12b SAR Core Processor: TriCore™ |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| PEF22810TV2.1 | Infineon Technologies |
Description: IC LINE DRIVER Packaging: Bulk |
на замовлення 43425 шт: термін постачання 21-31 дні (днів) |
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| PEB22811HV1.3 | Infineon Technologies |
Description: IC LINE DRIVER CHIP Packaging: Bulk |
на замовлення 2453 шт: термін постачання 21-31 дні (днів) |
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| PEF22812FV2.2 | Infineon Technologies |
Description: IC LINE DRIVER CHIP Packaging: Bulk |
на замовлення 378 шт: термін постачання 21-31 дні (днів) |
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| PEF22818FV1.1 | Infineon Technologies |
Description: IC TRANS SINGLE PORT DIGITAL Packaging: Bulk |
на замовлення 28508 шт: термін постачання 21-31 дні (днів) |
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| PEF22812ELV2.2 | Infineon Technologies |
Description: IC LINE DRIVER CHIP Packaging: Bulk |
на замовлення 3140 шт: термін постачання 21-31 дні (днів) |
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| KP214E3022XTMA1 | Infineon Technologies |
Description: INTEGRATED PRESSURE SENS Packaging: Tape & Reel (TR) Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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IKWH20N65WR6XKSA1 | Infineon Technologies |
Description: IGBT TRENCH FS 650V 55A TO247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 20A Supplier Device Package: PG-TO247-3-32 IGBT Type: Trench Field Stop Gate Charge: 97 nC Part Status: Active Current - Collector (Ic) (Max): 55 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 60 A Power - Max: 136 W |
на замовлення 58 шт: термін постачання 21-31 дні (днів) |
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IKWH70N65WR6XKSA1 | Infineon Technologies |
Description: IGBT TRENCH FS 650V 122A TO247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 70A Supplier Device Package: PG-TO247-3-32 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 42ns/378ns Switching Energy: 2.2mJ (on), 1.07mJ (off) Test Condition: 400V, 70A, 15Ohm, 15V Gate Charge: 269 nC Part Status: Active Current - Collector (Ic) (Max): 122 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 210 A Power - Max: 290 W |
на замовлення 330 шт: термін постачання 21-31 дні (днів) |
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TLI4971A050T5UE0001XUMA1 | Infineon Technologies |
Description: CURRENT SEN HE/OL 50A PG-TISONPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Polarization: Unidirectional Sensitivity: 24mV/A Mounting Type: Surface Mount Output: Ratiometric, Voltage Frequency: DC ~ 240kHz Operating Temperature: -40°C ~ 105°C Voltage - Supply: 3.1V ~ 3.5V Response Time: 250ns Sensor Type: Hall Effect, Open Loop Linearity: ±2.25% For Measuring: AC/DC Current - Supply (Max): 25mA Current - Sensing: 50A Supplier Device Package: PG-TISON-8-5 Part Status: Active Number of Channels: 1 Grade: Automotive Qualification: AEC-Q100 |
на замовлення 2264 шт: термін постачання 21-31 дні (днів) |
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BSC152N10NSFG | Infineon Technologies |
Description: N-CHANNEL POWER MOSFETCurrent - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 63A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Bulk Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: PG-TDSON-8 Vgs(th) (Max) @ Id: 4V @ 72µA Power Dissipation (Max): 114W (Tc) Rds On (Max) @ Id, Vgs: 15.2mOhm @ 25A, 10V |
на замовлення 9249 шт: термін постачання 21-31 дні (днів) |
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BSC118N10NSG | Infineon Technologies |
Description: BSC118N10 - 12V-300V N-CHANNEL PInput Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: PG-TDSON-8-1 Vgs(th) (Max) @ Id: 4V @ 70µA Power Dissipation (Max): 114W (Tc) Rds On (Max) @ Id, Vgs: 11.8mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 71A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FP10R12W1T7PB3BPSA1 | Infineon Technologies |
Description: LOW POWER EASY Packaging: Tray |
на замовлення 30 шт: термін постачання 21-31 дні (днів) |
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| FP10R12YT3BOMA1 | Infineon Technologies | Description: MOD IGBT LOW PWR EASY2-1 |
товару немає в наявності |
Мінімальне замовлення: 20 шт В кошику од. на суму грн. | |||||||||||||||||
| FP10R12YT3B4BOMA1 | Infineon Technologies | Description: MOD IGBT LOW PWR EASY2-1 |
товару немає в наявності |
Мінімальне замовлення: 20 шт В кошику од. на суму грн. | |||||||||||||||||
| FP25R12KT4_B15 | Infineon Technologies |
Description: FP25R12 - IGBT MODULEInput Capacitance (Cies) @ Vce: 1.45 nF @ 25 V Current - Collector Cutoff (Max): 1 mA Power - Max: 160 W Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 28 A IGBT Type: Trench Field Stop Supplier Device Package: AG-ECONO2-5-1 NTC Thermistor: Yes Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 25A Operating Temperature: -40°C ~ 150°C (TJ) Configuration: Three Phase Inverter Input: Three Phase Bridge Rectifier Mounting Type: Chassis Mount Package / Case: Module Packaging: Bulk |
на замовлення 150 шт: термін постачання 21-31 дні (днів) |
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FP25R12W2T7B11BPSA1 | Infineon Technologies |
Description: IGBT MOD 1200V 25A AG-EASY2B-2Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Three Phase Bridge Rectifier Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 25A NTC Thermistor: Yes Supplier Device Package: AG-EASY2B-2 IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 25 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 20 mW Current - Collector Cutoff (Max): 5.6 µA Input Capacitance (Cies) @ Vce: 4.77 nF @ 25 V |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
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FP25R12KT3BPSA1 | Infineon Technologies |
Description: IGBT MOD 1200V 40A AG-ECONO2-8Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Three Phase Bridge Rectifier Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 125°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 25A NTC Thermistor: Yes Supplier Device Package: AG-ECONO2-8 Part Status: Active Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 105 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 1.8 nF @ 25 V |
на замовлення 4 шт: термін постачання 21-31 дні (днів) |
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FP25R12KS4CBOSA1 | Infineon Technologies |
Description: IGBT MOD 1200V 40A 230W MODPackaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -40°C ~ 125°C Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 25A NTC Thermistor: Yes Supplier Device Package: Module Part Status: Last Time Buy Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 230 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 1.5 nF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| IRGC75B60KB | Infineon Technologies |
Description: IGBT CHIPPackaging: Bulk Package / Case: Die Mounting Type: Surface Mount Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A Supplier Device Package: Die IGBT Type: NPT Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 600 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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BSZ0704LSATMA1 | Infineon Technologies |
Description: MOSFET N-CH 60V 11A/40A TSDSONPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 40A (Tc) Rds On (Max) @ Id, Vgs: 9.9mOhm @ 20A, 10V Power Dissipation (Max): 2.1W (Ta), 36W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 14µA Supplier Device Package: PG-TDSON-8 FL Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 30 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BSZ0704LSATMA1 | Infineon Technologies |
Description: MOSFET N-CH 60V 11A/40A TSDSONPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 40A (Tc) Rds On (Max) @ Id, Vgs: 9.9mOhm @ 20A, 10V Power Dissipation (Max): 2.1W (Ta), 36W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 14µA Supplier Device Package: PG-TDSON-8 FL Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 30 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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TC1766192F80HLBDKXUMA1 | Infineon Technologies |
Description: IC MCU 32BIT 1.5MB FLASH 176LQFPDigiKey Programmable: Not Verified Number of I/O: 81 Part Status: Discontinued at Digi-Key Supplier Device Package: PG-LQFP-176-2 Peripherals: DMA, POR, WDT Connectivity: ASC, CANbus, MLI, MSC, SSC Voltage - Supply (Vcc/Vdd): 1.42V ~ 1.58V Core Size: 32-Bit Single-Core Data Converters: A/D 2x10b, 32x8b/10b/12b Core Processor: TriCore™ Program Memory Type: FLASH Oscillator Type: External Operating Temperature: -40°C ~ 125°C (TA) RAM Size: 108K x 8 Program Memory Size: 1.5MB (1.5M x 8) Speed: 80MHz Mounting Type: Surface Mount Package / Case: 176-LQFP Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 500 шт В кошику од. на суму грн. | ||||||||||||||||
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BSO072N03S | Infineon Technologies |
Description: MOSFET N-CH 30V 12A 8DSO |
на замовлення 2183 шт: термін постачання 21-31 дні (днів) |
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TLE4263GMXUMA2 | Infineon Technologies |
Description: IC REG LIN 5V 200MA PG-DSO-14-61Packaging: Cut Tape (CT) Package / Case: 14-SOIC (0.154", 3.90mm Width) Output Type: Fixed Mounting Type: Surface Mount Current - Output: 200mA Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 50 µA Voltage - Input (Max): 45V Number of Regulators: 1 Supplier Device Package: PG-DSO-14-61 Voltage - Output (Min/Fixed): 5V Control Features: Reset, Wake-Up, Watchdog Grade: Automotive Part Status: Active PSRR: 54dB (100Hz) Voltage Dropout (Max): 0.5V @ 150mA Protection Features: Over Temperature, Reverse Polarity, Short Circuit Current - Supply (Max): 23 mA Qualification: AEC-Q100 |
на замовлення 2229 шт: термін постачання 21-31 дні (днів) |
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TLE94112ESRPIHATTOBO1 | Infineon Technologies |
Description: IC HALF BRIDGE DRIVER 24TSDSOFeatures: Charge Pump Packaging: Bulk Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad Mounting Type: Surface Mount Interface: Logic, PWM, SPI Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Half Bridge (12) Voltage - Supply: 3V ~ 5.5V Rds On (Typ): 1.3Ohm LS, 1.3Ohm HS Applications: DC Motors, General Purpose Voltage - Load: 3V ~ 5.5V Supplier Device Package: PG-TSDSO-24 Fault Protection: Current Limiting, Over Current, Over Temperature, Short Circuit Load Type: Inductive, Capacitive, Resistive Part Status: Active |
на замовлення 3 шт: термін постачання 21-31 дні (днів) |
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IR21771SPBF-INF | Infineon Technologies |
Description: IC CURRENT SENSE 16SOIC Packaging: Bulk Package / Case: 16-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Function: Current Sense Voltage - Input: 8V ~ 20V Operating Temperature: -40°C ~ 125°C Supplier Device Package: 16-SOIC Part Status: Active |
на замовлення 19800 шт: термін постачання 21-31 дні (днів) |
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IR2172PBF | Infineon Technologies |
Description: IC CURRENT SENSE 8DIPPackaging: Tube Package / Case: 8-DIP (0.300", 7.62mm) Mounting Type: Through Hole Function: Current Sense Voltage - Input: 9.5V ~ 20V Current - Output: 20mA Operating Temperature: -40°C ~ 125°C Supplier Device Package: 8-PDIP |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
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IR21726S | Infineon Technologies |
Description: IC CURRENT SENSE 8SOICPackaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Function: Current Sense Voltage - Input: 9.5V ~ 20V Current - Output: 20mA Operating Temperature: -40°C ~ 125°C Supplier Device Package: 8-SOIC |
товару немає в наявності |
Мінімальне замовлення: 45 шт В кошику од. на суму грн. | ||||||||||||||||
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KITXMC4400DCV1TOBO1 | Infineon Technologies |
Description: EVAL KIT XMC4400Packaging: Box Mounting Type: Fixed Type: MCU 32-Bit Contents: Board(s) Core Processor: ARM® Cortex®-M4 Board Type: Evaluation Platform Utilized IC / Part: XMC4400 Part Status: Active |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
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IPT60R055CFD7XTMA1 | Infineon Technologies |
Description: MOSFET N-CH 600V 44A 8HSOFPackaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 44A (Tc) Rds On (Max) @ Id, Vgs: 55mOhm @ 15.1A, 10V Power Dissipation (Max): 236W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 760µA Supplier Device Package: PG-HSOF-8-2 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2721 pF @ 400 V |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||||||
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IPT60R055CFD7XTMA1 | Infineon Technologies |
Description: MOSFET N-CH 600V 44A 8HSOFPackaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 44A (Tc) Rds On (Max) @ Id, Vgs: 55mOhm @ 15.1A, 10V Power Dissipation (Max): 236W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 760µA Supplier Device Package: PG-HSOF-8-2 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2721 pF @ 400 V |
на замовлення 1746 шт: термін постачання 21-31 дні (днів) |
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BGS22WL10E6327XTSA1 | Infineon Technologies |
Description: IC RF SWITCH DPDT 3GHZ TSLP10-1Packaging: Bulk Package / Case: 10-XFQFN Impedance: 50Ohm Mounting Type: Surface Mount Circuit: DPDT RF Type: General Purpose Operating Temperature: -30°C ~ 85°C Voltage - Supply: 2.4V ~ 3.6V Insertion Loss: 0.45dB Frequency Range: 100MHz ~ 3GHz Topology: Reflective Test Frequency: 2.69GHz Isolation: 24dB Supplier Device Package: TSLP-10-1 |
на замовлення 9490528 шт: термін постачання 21-31 дні (днів) |
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| BGS22WL10E6327XTSA1020 | Infineon Technologies |
Description: IC RF SWITCH DPDT 3GHZ TSLP10-1Features: Single/Dual Line Control Packaging: Bulk Package / Case: 10-XFQFN Impedance: 50Ohm Circuit: DPDT RF Type: General Purpose Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2.3V ~ 3.6V Insertion Loss: 0.48dB Frequency Range: 100MHz ~ 3GHz P1dB: 34dBm Test Frequency: 2.69GHz Isolation: 28dB Supplier Device Package: TSLP-10-1 Part Status: Active |
на замовлення 2422 шт: термін постачання 21-31 дні (днів) |
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PMA7110XUMA1 | Infineon Technologies |
Description: IC RF TXRX+MCU ISM<1GHZ 38TSSOPPackaging: Bulk Package / Case: 38-TFSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Frequency: 315MHz, 434MHz, 868MHz, 915MHz Memory Size: 6kB Flash, 12kB ROM, 256B RAM Type: TxRx + MCU Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.9V ~ 3.6V Power - Output: 10dBm Data Rate (Max): 32kbps Current - Transmitting: 8.9mA ~ 17.1mA Supplier Device Package: PG-TSSOP-38 GPIO: 10 Modulation: ASK, FSK RF Family/Standard: General ISM < 1GHz Serial Interfaces: I2C, SPI DigiKey Programmable: Not Verified |
на замовлення 3003 шт: термін постачання 21-31 дні (днів) |
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BTT60501ERAXUMA1 | Infineon Technologies |
Description: IC PWR SWITCH N-CHAN 1:1 TDSO-14Packaging: Cut Tape (CT) Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: High Side Rds On (Typ): 50mOhm Input Type: Non-Inverting Voltage - Load: 5V ~ 36V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 4.5A Ratio - Input:Output: 1:1 Supplier Device Package: PG-TDSO-14-11 Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage Grade: Automotive Part Status: Active Qualification: AEC-Q100 |
на замовлення 11111 шт: термін постачання 21-31 дні (днів) |
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| FF200R17KE3 | Infineon Technologies |
Description: INSULATED GATE BIPOLAR TRANSISTO |
на замовлення 40 шт: термін постачання 21-31 дні (днів) |
Мінімальне замовлення: 3 шт В кошику од. на суму грн. | |||||||||||||||||
| FF200R12MT4 | Infineon Technologies |
Description: IGBT MODULEPackaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Half Bridge Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 200A NTC Thermistor: Yes Supplier Device Package: AG-ECONOD-2-1 IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 295 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 1050 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 14 nF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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FF200R17KE3S4HOSA1 | Infineon Technologies |
Description: IGBT MODULE VCES 1200V 200APackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Half Bridge Inverter Operating Temperature: -40°C ~ 125°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 200A NTC Thermistor: No Supplier Device Package: Module IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 310 A Voltage - Collector Emitter Breakdown (Max): 1700 V Power - Max: 1250 W Current - Collector Cutoff (Max): 3 mA Input Capacitance (Cies) @ Vce: 18 nF @ 25 V |
на замовлення 8 шт: термін постачання 21-31 дні (днів) |
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| CY8CLED164-28PVXI | Infineon Technologies |
Description: PROGRAMMABLE SYSTEM ON A CHIP DigiKey Programmable: Not Verified Mounting Type: Surface Mount Packaging: Bulk |
на замовлення 1626 шт: термін постачання 21-31 дні (днів) |
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| SIGC12T60NCX1SA1 | Infineon Technologies |
Description: IGBT 3 CHIP 600V WAFERPackaging: Bulk Package / Case: Die Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A Supplier Device Package: Die IGBT Type: NPT Td (on/off) @ 25°C: 21ns/110ns Test Condition: 300V, 10A, 27Ohm, 15V Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 30 A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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S29GL01GT11TFV010 | Infineon Technologies |
Description: IC FLASH 1GBIT PARALLEL 56TSOPWrite Cycle Time - Word, Page: 60ns Supplier Device Package: 56-TSOP Memory Format: FLASH Technology: FLASH - NOR Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 105°C (TA) Memory Type: Non-Volatile Memory Size: 1Gbit Mounting Type: Surface Mount Package / Case: 56-TFSOP (0.724", 18.40mm Width) Packaging: Tray DigiKey Programmable: Not Verified Memory Organization: 128M x 8 Access Time: 110 ns Memory Interface: Parallel |
товару немає в наявності |
Мінімальне замовлення: 910 шт В кошику од. на суму грн. | ||||||||||||||||
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2EDL8023GXUMA1 | Infineon Technologies |
Description: IC GATE DRVR HI/LOW SIDE 8VDFNPackaging: Tape & Reel (TR) Package / Case: 8-VDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TJ) Voltage - Supply: 8V ~ 17V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 90 V Supplier Device Package: PG-VDSON-8-4 Rise / Fall Time (Typ): 45ns, 45ns Channel Type: Independent Driven Configuration: High-Side and Low-Side Number of Drivers: 2 Gate Type: N-Channel MOSFET Current - Peak Output (Source, Sink): 3A, 3A Part Status: Active DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 6000 шт В кошику од. на суму грн. | ||||||||||||||||
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2EDL8023GXUMA1 | Infineon Technologies |
Description: IC GATE DRVR HI/LOW SIDE 8VDFNPackaging: Cut Tape (CT) Package / Case: 8-VDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TJ) Voltage - Supply: 8V ~ 17V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 90 V Supplier Device Package: PG-VDSON-8-4 Rise / Fall Time (Typ): 45ns, 45ns Channel Type: Independent Driven Configuration: High-Side and Low-Side Number of Drivers: 2 Gate Type: N-Channel MOSFET Current - Peak Output (Source, Sink): 3A, 3A Part Status: Active DigiKey Programmable: Not Verified |
на замовлення 10023 шт: термін постачання 21-31 дні (днів) |
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FD600R17KE3B2NOSA1 | Infineon Technologies |
Description: IGBT MODULE 1700V 4300W MODULEInput Capacitance (Cies) @ Vce: 54 nF @ 25 V Current - Collector Cutoff (Max): 5 mA Power - Max: 4300 W Voltage - Collector Emitter Breakdown (Max): 1700 V Supplier Device Package: Module NTC Thermistor: No Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 600A Operating Temperature: -40°C ~ 125°C Configuration: Single Chopper Input: Standard Mounting Type: Chassis Mount Package / Case: Module Packaging: Bulk |
на замовлення 110 шт: термін постачання 21-31 дні (днів) |
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IRFR13N15DTRPBF | Infineon Technologies |
Description: MOSFET N-CH 150V 14A DPAK |
товару немає в наявності |
Мінімальне замовлення: 493 шт В кошику од. на суму грн. | ||||||||||||||||
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IPP129N10NF2SAKMA1 | Infineon Technologies |
Description: TRENCH >=100VPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 52A (Tc) Rds On (Max) @ Id, Vgs: 12.9mOhm @ 30A, 10V Power Dissipation (Max): 3.8W (Ta), 71W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 30µA Supplier Device Package: PG-TO220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 50 V |
на замовлення 977 шт: термін постачання 21-31 дні (днів) |
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FF300R07ME4B11BPSA1 | Infineon Technologies |
Description: MEDIUM POWER ECONOInput Capacitance (Cies) @ Vce: 18.5 nF @ 25 V Current - Collector Cutoff (Max): 1 mA Power - Max: 1100 W Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 390 A Part Status: Active IGBT Type: Trench Field Stop Supplier Device Package: AG-ECONOD-3 Input: Standard Mounting Type: Chassis Mount Package / Case: Module Packaging: Tray NTC Thermistor: Yes Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 300A Operating Temperature: -40°C ~ 150°C (TJ) Configuration: 2 Independent |
на замовлення 13 шт: термін постачання 21-31 дні (днів) |
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IPD90N08S405ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 80V 90A TO252-3Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 5.3mOhm @ 90A, 10V Power Dissipation (Max): 144W (Tc) Vgs(th) (Max) @ Id: 4V @ 90µA Supplier Device Package: PG-TO252-3-313 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 6865 шт: термін постачання 21-31 дні (днів) |
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IQE013N04LM6ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 40V 31A/205A 8TSONInput Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Supplier Device Package: PG-TSON-8-4 Vgs(th) (Max) @ Id: 2V @ 51µA Power Dissipation (Max): 2.5W (Ta), 107W (Tc) Rds On (Max) @ Id, Vgs: 1.35mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 205A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Part Status: Active |
на замовлення 5846 шт: термін постачання 21-31 дні (днів) |
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IQE013N04LM6CGATMA1 | Infineon Technologies |
Description: 40V N-CH FET SOURCE-DOWN CG 3X3Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 205A (Tc) Rds On (Max) @ Id, Vgs: 1.35mOhm @ 20A, 10V Power Dissipation (Max): 2.5W (Ta), 107W (Tc) Vgs(th) (Max) @ Id: 2V @ 51µA Supplier Device Package: PG-TTFN-9-1 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 20 V |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||||
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IQE013N04LM6CGATMA1 | Infineon Technologies |
Description: 40V N-CH FET SOURCE-DOWN CG 3X3Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 205A (Tc) Rds On (Max) @ Id, Vgs: 1.35mOhm @ 20A, 10V Power Dissipation (Max): 2.5W (Ta), 107W (Tc) Vgs(th) (Max) @ Id: 2V @ 51µA Supplier Device Package: PG-TTFN-9-1 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 20 V |
на замовлення 274 шт: термін постачання 21-31 дні (днів) |
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| 111-4183PBF |
Виробник: Infineon Technologies
Description: IC REG BUCK CTRLR SMD
Description: IC REG BUCK CTRLR SMD
товару немає в наявності
В кошику
од. на суму грн.
| KX8664FRIBE |
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Виробник: Infineon Technologies
Description: XC800 I-FAMILY 8051 8-BIT MCU
DigiKey Programmable: Not Verified
Packaging: Bulk
Description: XC800 I-FAMILY 8051 8-BIT MCU
DigiKey Programmable: Not Verified
Packaging: Bulk
товару немає в наявності
В кошику
од. на суму грн.
| IPB147N03LGATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 20A D2PAK
Description: MOSFET N-CH 30V 20A D2PAK
на замовлення 18000 шт:
термін постачання 21-31 дні (днів)
| TC397XX256F300SBCKXUMA1 |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 16MB FLASH 292LFBGA
DigiKey Programmable: Not Verified
Part Status: Obsolete
Supplier Device Package: PG-LFBGA-292-10
Peripherals: DMA, I²S, PWM, WDT
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I²C, LINbus, MSC, PSI, QSPI, SENT
Voltage - Supply (Vcc/Vdd): 3.3V, 5V
Core Size: 32-Bit 6-Core
Core Processor: TriCore™
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 6.75M x 8
Program Memory Size: 16MB (16M x 8)
Speed: 300MHz
Mounting Type: Surface Mount
Package / Case: 292-LFBGA
Packaging: Tape & Reel (TR)
Description: IC MCU 32BIT 16MB FLASH 292LFBGA
DigiKey Programmable: Not Verified
Part Status: Obsolete
Supplier Device Package: PG-LFBGA-292-10
Peripherals: DMA, I²S, PWM, WDT
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I²C, LINbus, MSC, PSI, QSPI, SENT
Voltage - Supply (Vcc/Vdd): 3.3V, 5V
Core Size: 32-Bit 6-Core
Core Processor: TriCore™
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 6.75M x 8
Program Memory Size: 16MB (16M x 8)
Speed: 300MHz
Mounting Type: Surface Mount
Package / Case: 292-LFBGA
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| TC399XX256F300SBCKXUMA1 |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 16MB FLASH 516LFBGA
DigiKey Programmable: Not Verified
RAM Size: 6.75M x 8
Program Memory Size: 16MB (16M x 8)
Speed: 300MHz
Mounting Type: Surface Mount
Package / Case: 516-LFBGA
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Supplier Device Package: PG-LFBGA-516-10
Peripherals: DMA, I²S, PWM, WDT
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I²C, LINbus, MSC, PSI, QSPI, SENT
Voltage - Supply (Vcc/Vdd): 3.3V, 5V
Core Size: 32-Bit 6-Core
Core Processor: TriCore™
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
Description: IC MCU 32BIT 16MB FLASH 516LFBGA
DigiKey Programmable: Not Verified
RAM Size: 6.75M x 8
Program Memory Size: 16MB (16M x 8)
Speed: 300MHz
Mounting Type: Surface Mount
Package / Case: 516-LFBGA
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Supplier Device Package: PG-LFBGA-516-10
Peripherals: DMA, I²S, PWM, WDT
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I²C, LINbus, MSC, PSI, QSPI, SENT
Voltage - Supply (Vcc/Vdd): 3.3V, 5V
Core Size: 32-Bit 6-Core
Core Processor: TriCore™
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
товару немає в наявності
В кошику
од. на суму грн.
| XC87813FFA5VACKXUMA1 |
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Виробник: Infineon Technologies
Description: IC MCU 8BIT 52KB FLASH 64LQFP
DigiKey Programmable: Not Verified
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 3.25K x 8
Program Memory Size: 52KB (52K x 8)
Speed: 27MHz
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Packaging: Bulk
Number of I/O: 40
Part Status: Not For New Designs
Supplier Device Package: PG-LQFP-64-4
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Connectivity: SPI, SSI, UART/USART
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Core Size: 8-Bit
Data Converters: A/D 8x10b
Core Processor: XC800
Description: IC MCU 8BIT 52KB FLASH 64LQFP
DigiKey Programmable: Not Verified
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 3.25K x 8
Program Memory Size: 52KB (52K x 8)
Speed: 27MHz
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Packaging: Bulk
Number of I/O: 40
Part Status: Not For New Designs
Supplier Device Package: PG-LQFP-64-4
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Connectivity: SPI, SSI, UART/USART
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Core Size: 8-Bit
Data Converters: A/D 8x10b
Core Processor: XC800
на замовлення 8328 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 126+ | 158.20 грн |
| TC212S8F133SCACKXUMA1 |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 512KB FLASH 80TQFP
Packaging: Tape & Reel (TR)
Package / Case: 80-TQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 133MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 56K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: TriCore™
Data Converters: A/D 24x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 3.3V
Connectivity: CANbus, LINbus, QSPI
Peripherals: DMA, WDT
Supplier Device Package: PG-TQFP-80-7
Part Status: Active
Number of I/O: 59
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 512KB FLASH 80TQFP
Packaging: Tape & Reel (TR)
Package / Case: 80-TQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 133MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 56K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: TriCore™
Data Converters: A/D 24x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 3.3V
Connectivity: CANbus, LINbus, QSPI
Peripherals: DMA, WDT
Supplier Device Package: PG-TQFP-80-7
Part Status: Active
Number of I/O: 59
DigiKey Programmable: Not Verified
на замовлення 1800 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1800+ | 755.98 грн |
| TC212S8F133SCACKXUMA1 |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 512KB FLASH 80TQFP
Packaging: Cut Tape (CT)
Package / Case: 80-TQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 133MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 56K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: TriCore™
Data Converters: A/D 24x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 3.3V
Connectivity: CANbus, LINbus, QSPI
Peripherals: DMA, WDT
Supplier Device Package: PG-TQFP-80-7
Part Status: Active
Number of I/O: 59
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 512KB FLASH 80TQFP
Packaging: Cut Tape (CT)
Package / Case: 80-TQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 133MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 56K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: TriCore™
Data Converters: A/D 24x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 3.3V
Connectivity: CANbus, LINbus, QSPI
Peripherals: DMA, WDT
Supplier Device Package: PG-TQFP-80-7
Part Status: Active
Number of I/O: 59
DigiKey Programmable: Not Verified
на замовлення 1800 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1218.15 грн |
| 10+ | 931.94 грн |
| 25+ | 871.66 грн |
| 100+ | 755.82 грн |
| 250+ | 754.00 грн |
| TC214L8F133NACKXUMA1 |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 512KB FLASH 144TQFP
EEPROM Size: 96K x 8
Program Memory Type: FLASH
Oscillator Type: External
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 96K x 8
Program Memory Size: 512KB (512K x 8)
Speed: 133MHz
Mounting Type: Surface Mount
Package / Case: 144-LQFP Exposed Pad
Packaging: Cut Tape (CT)
DigiKey Programmable: Not Verified
Number of I/O: 120
Supplier Device Package: PG-TQFP-144-27
Peripherals: DMA, WDT
Connectivity: CANbus, LINbus, QSPI
Voltage - Supply (Vcc/Vdd): 3.3V
Core Size: 32-Bit Single-Core
Data Converters: A/D 24x12b SAR
Core Processor: TriCore™
Description: IC MCU 32BIT 512KB FLASH 144TQFP
EEPROM Size: 96K x 8
Program Memory Type: FLASH
Oscillator Type: External
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 96K x 8
Program Memory Size: 512KB (512K x 8)
Speed: 133MHz
Mounting Type: Surface Mount
Package / Case: 144-LQFP Exposed Pad
Packaging: Cut Tape (CT)
DigiKey Programmable: Not Verified
Number of I/O: 120
Supplier Device Package: PG-TQFP-144-27
Peripherals: DMA, WDT
Connectivity: CANbus, LINbus, QSPI
Voltage - Supply (Vcc/Vdd): 3.3V
Core Size: 32-Bit Single-Core
Data Converters: A/D 24x12b SAR
Core Processor: TriCore™
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| PEF22810TV2.1 |
на замовлення 43425 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 222+ | 99.02 грн |
| PEB22811HV1.3 |
на замовлення 2453 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 79+ | 281.01 грн |
| PEF22812FV2.2 |
на замовлення 378 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 23+ | 960.08 грн |
| PEF22818FV1.1 |
на замовлення 28508 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 21+ | 1065.72 грн |
| PEF22812ELV2.2 |
на замовлення 3140 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 17+ | 1296.01 грн |
| KP214E3022XTMA1 |
Виробник: Infineon Technologies
Description: INTEGRATED PRESSURE SENS
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Description: INTEGRATED PRESSURE SENS
Packaging: Tape & Reel (TR)
Part Status: Obsolete
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| IKWH20N65WR6XKSA1 |
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Виробник: Infineon Technologies
Description: IGBT TRENCH FS 650V 55A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 20A
Supplier Device Package: PG-TO247-3-32
IGBT Type: Trench Field Stop
Gate Charge: 97 nC
Part Status: Active
Current - Collector (Ic) (Max): 55 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 136 W
Description: IGBT TRENCH FS 650V 55A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 20A
Supplier Device Package: PG-TO247-3-32
IGBT Type: Trench Field Stop
Gate Charge: 97 nC
Part Status: Active
Current - Collector (Ic) (Max): 55 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 136 W
на замовлення 58 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 257.27 грн |
| 30+ | 135.93 грн |
| IKWH70N65WR6XKSA1 |
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Виробник: Infineon Technologies
Description: IGBT TRENCH FS 650V 122A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 70A
Supplier Device Package: PG-TO247-3-32
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 42ns/378ns
Switching Energy: 2.2mJ (on), 1.07mJ (off)
Test Condition: 400V, 70A, 15Ohm, 15V
Gate Charge: 269 nC
Part Status: Active
Current - Collector (Ic) (Max): 122 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 210 A
Power - Max: 290 W
Description: IGBT TRENCH FS 650V 122A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 70A
Supplier Device Package: PG-TO247-3-32
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 42ns/378ns
Switching Energy: 2.2mJ (on), 1.07mJ (off)
Test Condition: 400V, 70A, 15Ohm, 15V
Gate Charge: 269 nC
Part Status: Active
Current - Collector (Ic) (Max): 122 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 210 A
Power - Max: 290 W
на замовлення 330 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 339.41 грн |
| 30+ | 182.80 грн |
| 120+ | 151.03 грн |
| TLI4971A050T5UE0001XUMA1 |
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Виробник: Infineon Technologies
Description: CURRENT SEN HE/OL 50A PG-TISON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Polarization: Unidirectional
Sensitivity: 24mV/A
Mounting Type: Surface Mount
Output: Ratiometric, Voltage
Frequency: DC ~ 240kHz
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 3.1V ~ 3.5V
Response Time: 250ns
Sensor Type: Hall Effect, Open Loop
Linearity: ±2.25%
For Measuring: AC/DC
Current - Supply (Max): 25mA
Current - Sensing: 50A
Supplier Device Package: PG-TISON-8-5
Part Status: Active
Number of Channels: 1
Grade: Automotive
Qualification: AEC-Q100
Description: CURRENT SEN HE/OL 50A PG-TISON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Polarization: Unidirectional
Sensitivity: 24mV/A
Mounting Type: Surface Mount
Output: Ratiometric, Voltage
Frequency: DC ~ 240kHz
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 3.1V ~ 3.5V
Response Time: 250ns
Sensor Type: Hall Effect, Open Loop
Linearity: ±2.25%
For Measuring: AC/DC
Current - Supply (Max): 25mA
Current - Sensing: 50A
Supplier Device Package: PG-TISON-8-5
Part Status: Active
Number of Channels: 1
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2264 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 269.67 грн |
| 5+ | 232.37 грн |
| 10+ | 222.22 грн |
| 25+ | 197.14 грн |
| 50+ | 189.40 грн |
| 100+ | 182.29 грн |
| 500+ | 165.25 грн |
| 1000+ | 160.01 грн |
| BSC152N10NSFG |
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Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 63A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TDSON-8
Vgs(th) (Max) @ Id: 4V @ 72µA
Power Dissipation (Max): 114W (Tc)
Rds On (Max) @ Id, Vgs: 15.2mOhm @ 25A, 10V
Description: N-CHANNEL POWER MOSFET
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 63A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TDSON-8
Vgs(th) (Max) @ Id: 4V @ 72µA
Power Dissipation (Max): 114W (Tc)
Rds On (Max) @ Id, Vgs: 15.2mOhm @ 25A, 10V
на замовлення 9249 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 204+ | 100.44 грн |
| BSC118N10NSG |
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Виробник: Infineon Technologies
Description: BSC118N10 - 12V-300V N-CHANNEL P
Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TDSON-8-1
Vgs(th) (Max) @ Id: 4V @ 70µA
Power Dissipation (Max): 114W (Tc)
Rds On (Max) @ Id, Vgs: 11.8mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 71A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Bulk
Description: BSC118N10 - 12V-300V N-CHANNEL P
Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TDSON-8-1
Vgs(th) (Max) @ Id: 4V @ 70µA
Power Dissipation (Max): 114W (Tc)
Rds On (Max) @ Id, Vgs: 11.8mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 71A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Bulk
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| FP10R12W1T7PB3BPSA1 |
на замовлення 30 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 3528.15 грн |
| 10+ | 3026.99 грн |
| 30+ | 2846.71 грн |
| FP10R12YT3BOMA1 |
Виробник: Infineon Technologies
Description: MOD IGBT LOW PWR EASY2-1
Description: MOD IGBT LOW PWR EASY2-1
товару немає в наявності
Мінімальне замовлення: 20 шт
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| FP10R12YT3B4BOMA1 |
Виробник: Infineon Technologies
Description: MOD IGBT LOW PWR EASY2-1
Description: MOD IGBT LOW PWR EASY2-1
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Мінімальне замовлення: 20 шт
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| FP25R12KT4_B15 |
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Виробник: Infineon Technologies
Description: FP25R12 - IGBT MODULE
Input Capacitance (Cies) @ Vce: 1.45 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 160 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 28 A
IGBT Type: Trench Field Stop
Supplier Device Package: AG-ECONO2-5-1
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 25A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Three Phase Inverter
Input: Three Phase Bridge Rectifier
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
Description: FP25R12 - IGBT MODULE
Input Capacitance (Cies) @ Vce: 1.45 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 160 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 28 A
IGBT Type: Trench Field Stop
Supplier Device Package: AG-ECONO2-5-1
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 25A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Three Phase Inverter
Input: Three Phase Bridge Rectifier
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
на замовлення 150 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 4157.64 грн |
| FP25R12W2T7B11BPSA1 |
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Виробник: Infineon Technologies
Description: IGBT MOD 1200V 25A AG-EASY2B-2
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 25A
NTC Thermistor: Yes
Supplier Device Package: AG-EASY2B-2
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 5.6 µA
Input Capacitance (Cies) @ Vce: 4.77 nF @ 25 V
Description: IGBT MOD 1200V 25A AG-EASY2B-2
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 25A
NTC Thermistor: Yes
Supplier Device Package: AG-EASY2B-2
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 5.6 µA
Input Capacitance (Cies) @ Vce: 4.77 nF @ 25 V
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2988.82 грн |
| FP25R12KT3BPSA1 |
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Виробник: Infineon Technologies
Description: IGBT MOD 1200V 40A AG-ECONO2-8
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 25A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2-8
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 105 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 1.8 nF @ 25 V
Description: IGBT MOD 1200V 40A AG-ECONO2-8
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 25A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2-8
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 105 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 1.8 nF @ 25 V
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 4777.31 грн |
| FP25R12KS4CBOSA1 |
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Виробник: Infineon Technologies
Description: IGBT MOD 1200V 40A 230W MOD
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 25A
NTC Thermistor: Yes
Supplier Device Package: Module
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 230 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 1.5 nF @ 25 V
Description: IGBT MOD 1200V 40A 230W MOD
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 25A
NTC Thermistor: Yes
Supplier Device Package: Module
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 230 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 1.5 nF @ 25 V
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| IRGC75B60KB |
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Виробник: Infineon Technologies
Description: IGBT CHIP
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Supplier Device Package: Die
IGBT Type: NPT
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Description: IGBT CHIP
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Supplier Device Package: Die
IGBT Type: NPT
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
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| BSZ0704LSATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 11A/40A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 9.9mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 14µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 30 V
Description: MOSFET N-CH 60V 11A/40A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 9.9mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 14µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 30 V
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| BSZ0704LSATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 11A/40A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 9.9mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 14µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 30 V
Description: MOSFET N-CH 60V 11A/40A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 9.9mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 14µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 30 V
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| TC1766192F80HLBDKXUMA1 |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 1.5MB FLASH 176LQFP
DigiKey Programmable: Not Verified
Number of I/O: 81
Part Status: Discontinued at Digi-Key
Supplier Device Package: PG-LQFP-176-2
Peripherals: DMA, POR, WDT
Connectivity: ASC, CANbus, MLI, MSC, SSC
Voltage - Supply (Vcc/Vdd): 1.42V ~ 1.58V
Core Size: 32-Bit Single-Core
Data Converters: A/D 2x10b, 32x8b/10b/12b
Core Processor: TriCore™
Program Memory Type: FLASH
Oscillator Type: External
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 108K x 8
Program Memory Size: 1.5MB (1.5M x 8)
Speed: 80MHz
Mounting Type: Surface Mount
Package / Case: 176-LQFP
Packaging: Tape & Reel (TR)
Description: IC MCU 32BIT 1.5MB FLASH 176LQFP
DigiKey Programmable: Not Verified
Number of I/O: 81
Part Status: Discontinued at Digi-Key
Supplier Device Package: PG-LQFP-176-2
Peripherals: DMA, POR, WDT
Connectivity: ASC, CANbus, MLI, MSC, SSC
Voltage - Supply (Vcc/Vdd): 1.42V ~ 1.58V
Core Size: 32-Bit Single-Core
Data Converters: A/D 2x10b, 32x8b/10b/12b
Core Processor: TriCore™
Program Memory Type: FLASH
Oscillator Type: External
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 108K x 8
Program Memory Size: 1.5MB (1.5M x 8)
Speed: 80MHz
Mounting Type: Surface Mount
Package / Case: 176-LQFP
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 500 шт
В кошику
од. на суму грн.
| BSO072N03S |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 12A 8DSO
Description: MOSFET N-CH 30V 12A 8DSO
на замовлення 2183 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 626+ | 35.88 грн |
| TLE4263GMXUMA2 |
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Виробник: Infineon Technologies
Description: IC REG LIN 5V 200MA PG-DSO-14-61
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 50 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-DSO-14-61
Voltage - Output (Min/Fixed): 5V
Control Features: Reset, Wake-Up, Watchdog
Grade: Automotive
Part Status: Active
PSRR: 54dB (100Hz)
Voltage Dropout (Max): 0.5V @ 150mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 23 mA
Qualification: AEC-Q100
Description: IC REG LIN 5V 200MA PG-DSO-14-61
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 50 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-DSO-14-61
Voltage - Output (Min/Fixed): 5V
Control Features: Reset, Wake-Up, Watchdog
Grade: Automotive
Part Status: Active
PSRR: 54dB (100Hz)
Voltage Dropout (Max): 0.5V @ 150mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 23 mA
Qualification: AEC-Q100
на замовлення 2229 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 213.87 грн |
| 10+ | 154.39 грн |
| 25+ | 141.51 грн |
| 100+ | 119.49 грн |
| 250+ | 113.14 грн |
| 500+ | 109.32 грн |
| 1000+ | 104.43 грн |
| TLE94112ESRPIHATTOBO1 |
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Виробник: Infineon Technologies
Description: IC HALF BRIDGE DRIVER 24TSDSO
Features: Charge Pump
Packaging: Bulk
Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Interface: Logic, PWM, SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (12)
Voltage - Supply: 3V ~ 5.5V
Rds On (Typ): 1.3Ohm LS, 1.3Ohm HS
Applications: DC Motors, General Purpose
Voltage - Load: 3V ~ 5.5V
Supplier Device Package: PG-TSDSO-24
Fault Protection: Current Limiting, Over Current, Over Temperature, Short Circuit
Load Type: Inductive, Capacitive, Resistive
Part Status: Active
Description: IC HALF BRIDGE DRIVER 24TSDSO
Features: Charge Pump
Packaging: Bulk
Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Interface: Logic, PWM, SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (12)
Voltage - Supply: 3V ~ 5.5V
Rds On (Typ): 1.3Ohm LS, 1.3Ohm HS
Applications: DC Motors, General Purpose
Voltage - Load: 3V ~ 5.5V
Supplier Device Package: PG-TSDSO-24
Fault Protection: Current Limiting, Over Current, Over Temperature, Short Circuit
Load Type: Inductive, Capacitive, Resistive
Part Status: Active
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2625.39 грн |
| IR21771SPBF-INF |
Виробник: Infineon Technologies
Description: IC CURRENT SENSE 16SOIC
Packaging: Bulk
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Function: Current Sense
Voltage - Input: 8V ~ 20V
Operating Temperature: -40°C ~ 125°C
Supplier Device Package: 16-SOIC
Part Status: Active
Description: IC CURRENT SENSE 16SOIC
Packaging: Bulk
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Function: Current Sense
Voltage - Input: 8V ~ 20V
Operating Temperature: -40°C ~ 125°C
Supplier Device Package: 16-SOIC
Part Status: Active
на замовлення 19800 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 64+ | 334.87 грн |
| IR2172PBF |
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Виробник: Infineon Technologies
Description: IC CURRENT SENSE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Function: Current Sense
Voltage - Input: 9.5V ~ 20V
Current - Output: 20mA
Operating Temperature: -40°C ~ 125°C
Supplier Device Package: 8-PDIP
Description: IC CURRENT SENSE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Function: Current Sense
Voltage - Input: 9.5V ~ 20V
Current - Output: 20mA
Operating Temperature: -40°C ~ 125°C
Supplier Device Package: 8-PDIP
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
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| IR21726S |
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Виробник: Infineon Technologies
Description: IC CURRENT SENSE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Function: Current Sense
Voltage - Input: 9.5V ~ 20V
Current - Output: 20mA
Operating Temperature: -40°C ~ 125°C
Supplier Device Package: 8-SOIC
Description: IC CURRENT SENSE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Function: Current Sense
Voltage - Input: 9.5V ~ 20V
Current - Output: 20mA
Operating Temperature: -40°C ~ 125°C
Supplier Device Package: 8-SOIC
товару немає в наявності
Мінімальне замовлення: 45 шт
В кошику
од. на суму грн.
| KITXMC4400DCV1TOBO1 |
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Виробник: Infineon Technologies
Description: EVAL KIT XMC4400
Packaging: Box
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: ARM® Cortex®-M4
Board Type: Evaluation Platform
Utilized IC / Part: XMC4400
Part Status: Active
Description: EVAL KIT XMC4400
Packaging: Box
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: ARM® Cortex®-M4
Board Type: Evaluation Platform
Utilized IC / Part: XMC4400
Part Status: Active
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 10078.45 грн |
| IPT60R055CFD7XTMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 44A 8HSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 15.1A, 10V
Power Dissipation (Max): 236W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 760µA
Supplier Device Package: PG-HSOF-8-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2721 pF @ 400 V
Description: MOSFET N-CH 600V 44A 8HSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 15.1A, 10V
Power Dissipation (Max): 236W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 760µA
Supplier Device Package: PG-HSOF-8-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2721 pF @ 400 V
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| IPT60R055CFD7XTMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 44A 8HSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 15.1A, 10V
Power Dissipation (Max): 236W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 760µA
Supplier Device Package: PG-HSOF-8-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2721 pF @ 400 V
Description: MOSFET N-CH 600V 44A 8HSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 15.1A, 10V
Power Dissipation (Max): 236W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 760µA
Supplier Device Package: PG-HSOF-8-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2721 pF @ 400 V
на замовлення 1746 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 467.27 грн |
| 10+ | 303.78 грн |
| 100+ | 225.80 грн |
| BGS22WL10E6327XTSA1 |
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Виробник: Infineon Technologies
Description: IC RF SWITCH DPDT 3GHZ TSLP10-1
Packaging: Bulk
Package / Case: 10-XFQFN
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: DPDT
RF Type: General Purpose
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 2.4V ~ 3.6V
Insertion Loss: 0.45dB
Frequency Range: 100MHz ~ 3GHz
Topology: Reflective
Test Frequency: 2.69GHz
Isolation: 24dB
Supplier Device Package: TSLP-10-1
Description: IC RF SWITCH DPDT 3GHZ TSLP10-1
Packaging: Bulk
Package / Case: 10-XFQFN
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: DPDT
RF Type: General Purpose
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 2.4V ~ 3.6V
Insertion Loss: 0.45dB
Frequency Range: 100MHz ~ 3GHz
Topology: Reflective
Test Frequency: 2.69GHz
Isolation: 24dB
Supplier Device Package: TSLP-10-1
на замовлення 9490528 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 945+ | 21.26 грн |
| BGS22WL10E6327XTSA1020 |
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Виробник: Infineon Technologies
Description: IC RF SWITCH DPDT 3GHZ TSLP10-1
Features: Single/Dual Line Control
Packaging: Bulk
Package / Case: 10-XFQFN
Impedance: 50Ohm
Circuit: DPDT
RF Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.3V ~ 3.6V
Insertion Loss: 0.48dB
Frequency Range: 100MHz ~ 3GHz
P1dB: 34dBm
Test Frequency: 2.69GHz
Isolation: 28dB
Supplier Device Package: TSLP-10-1
Part Status: Active
Description: IC RF SWITCH DPDT 3GHZ TSLP10-1
Features: Single/Dual Line Control
Packaging: Bulk
Package / Case: 10-XFQFN
Impedance: 50Ohm
Circuit: DPDT
RF Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.3V ~ 3.6V
Insertion Loss: 0.48dB
Frequency Range: 100MHz ~ 3GHz
P1dB: 34dBm
Test Frequency: 2.69GHz
Isolation: 28dB
Supplier Device Package: TSLP-10-1
Part Status: Active
на замовлення 2422 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1519+ | 15.50 грн |
| PMA7110XUMA1 |
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Виробник: Infineon Technologies
Description: IC RF TXRX+MCU ISM<1GHZ 38TSSOP
Packaging: Bulk
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Frequency: 315MHz, 434MHz, 868MHz, 915MHz
Memory Size: 6kB Flash, 12kB ROM, 256B RAM
Type: TxRx + MCU
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.9V ~ 3.6V
Power - Output: 10dBm
Data Rate (Max): 32kbps
Current - Transmitting: 8.9mA ~ 17.1mA
Supplier Device Package: PG-TSSOP-38
GPIO: 10
Modulation: ASK, FSK
RF Family/Standard: General ISM < 1GHz
Serial Interfaces: I2C, SPI
DigiKey Programmable: Not Verified
Description: IC RF TXRX+MCU ISM<1GHZ 38TSSOP
Packaging: Bulk
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Frequency: 315MHz, 434MHz, 868MHz, 915MHz
Memory Size: 6kB Flash, 12kB ROM, 256B RAM
Type: TxRx + MCU
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.9V ~ 3.6V
Power - Output: 10dBm
Data Rate (Max): 32kbps
Current - Transmitting: 8.9mA ~ 17.1mA
Supplier Device Package: PG-TSSOP-38
GPIO: 10
Modulation: ASK, FSK
RF Family/Standard: General ISM < 1GHz
Serial Interfaces: I2C, SPI
DigiKey Programmable: Not Verified
на замовлення 3003 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 171+ | 116.12 грн |
| BTT60501ERAXUMA1 |
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Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 TDSO-14
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 50mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 36V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 4.5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TDSO-14-11
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
Description: IC PWR SWITCH N-CHAN 1:1 TDSO-14
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 50mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 36V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 4.5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TDSO-14-11
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
на замовлення 11111 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 185.98 грн |
| 10+ | 133.72 грн |
| 25+ | 122.23 грн |
| 100+ | 102.92 грн |
| 250+ | 97.30 грн |
| 500+ | 95.15 грн |
| FF200R17KE3 |
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Виробник: Infineon Technologies
Description: INSULATED GATE BIPOLAR TRANSISTO
Description: INSULATED GATE BIPOLAR TRANSISTO
на замовлення 40 шт:
термін постачання 21-31 дні (днів)
| FF200R12MT4 |
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Виробник: Infineon Technologies
Description: IGBT MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 200A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONOD-2-1
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 295 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1050 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 14 nF @ 25 V
Description: IGBT MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 200A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONOD-2-1
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 295 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1050 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 14 nF @ 25 V
товару немає в наявності
В кошику
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| FF200R17KE3S4HOSA1 |
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Виробник: Infineon Technologies
Description: IGBT MODULE VCES 1200V 200A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 200A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 310 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 1250 W
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 18 nF @ 25 V
Description: IGBT MODULE VCES 1200V 200A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 200A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 310 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 1250 W
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 18 nF @ 25 V
на замовлення 8 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 8699.11 грн |
| CY8CLED164-28PVXI |
Виробник: Infineon Technologies
Description: PROGRAMMABLE SYSTEM ON A CHIP
DigiKey Programmable: Not Verified
Mounting Type: Surface Mount
Packaging: Bulk
Description: PROGRAMMABLE SYSTEM ON A CHIP
DigiKey Programmable: Not Verified
Mounting Type: Surface Mount
Packaging: Bulk
на замовлення 1626 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 40+ | 548.85 грн |
| SIGC12T60NCX1SA1 |
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Виробник: Infineon Technologies
Description: IGBT 3 CHIP 600V WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
Supplier Device Package: Die
IGBT Type: NPT
Td (on/off) @ 25°C: 21ns/110ns
Test Condition: 300V, 10A, 27Ohm, 15V
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 30 A
Description: IGBT 3 CHIP 600V WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
Supplier Device Package: Die
IGBT Type: NPT
Td (on/off) @ 25°C: 21ns/110ns
Test Condition: 300V, 10A, 27Ohm, 15V
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 30 A
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| S29GL01GT11TFV010 |
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Виробник: Infineon Technologies
Description: IC FLASH 1GBIT PARALLEL 56TSOP
Write Cycle Time - Word, Page: 60ns
Supplier Device Package: 56-TSOP
Memory Format: FLASH
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 105°C (TA)
Memory Type: Non-Volatile
Memory Size: 1Gbit
Mounting Type: Surface Mount
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Packaging: Tray
DigiKey Programmable: Not Verified
Memory Organization: 128M x 8
Access Time: 110 ns
Memory Interface: Parallel
Description: IC FLASH 1GBIT PARALLEL 56TSOP
Write Cycle Time - Word, Page: 60ns
Supplier Device Package: 56-TSOP
Memory Format: FLASH
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 105°C (TA)
Memory Type: Non-Volatile
Memory Size: 1Gbit
Mounting Type: Surface Mount
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Packaging: Tray
DigiKey Programmable: Not Verified
Memory Organization: 128M x 8
Access Time: 110 ns
Memory Interface: Parallel
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Мінімальне замовлення: 910 шт
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| 2EDL8023GXUMA1 |
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Виробник: Infineon Technologies
Description: IC GATE DRVR HI/LOW SIDE 8VDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 8V ~ 17V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 90 V
Supplier Device Package: PG-VDSON-8-4
Rise / Fall Time (Typ): 45ns, 45ns
Channel Type: Independent
Driven Configuration: High-Side and Low-Side
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Current - Peak Output (Source, Sink): 3A, 3A
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HI/LOW SIDE 8VDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 8V ~ 17V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 90 V
Supplier Device Package: PG-VDSON-8-4
Rise / Fall Time (Typ): 45ns, 45ns
Channel Type: Independent
Driven Configuration: High-Side and Low-Side
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Current - Peak Output (Source, Sink): 3A, 3A
Part Status: Active
DigiKey Programmable: Not Verified
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Мінімальне замовлення: 6000 шт
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| 2EDL8023GXUMA1 |
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Виробник: Infineon Technologies
Description: IC GATE DRVR HI/LOW SIDE 8VDFN
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 8V ~ 17V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 90 V
Supplier Device Package: PG-VDSON-8-4
Rise / Fall Time (Typ): 45ns, 45ns
Channel Type: Independent
Driven Configuration: High-Side and Low-Side
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Current - Peak Output (Source, Sink): 3A, 3A
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HI/LOW SIDE 8VDFN
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 8V ~ 17V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 90 V
Supplier Device Package: PG-VDSON-8-4
Rise / Fall Time (Typ): 45ns, 45ns
Channel Type: Independent
Driven Configuration: High-Side and Low-Side
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Current - Peak Output (Source, Sink): 3A, 3A
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 10023 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 106.94 грн |
| 10+ | 75.14 грн |
| 25+ | 68.17 грн |
| 100+ | 56.78 грн |
| 250+ | 53.34 грн |
| 500+ | 51.26 грн |
| 1000+ | 48.74 грн |
| 2500+ | 46.97 грн |
| FD600R17KE3B2NOSA1 |
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Виробник: Infineon Technologies
Description: IGBT MODULE 1700V 4300W MODULE
Input Capacitance (Cies) @ Vce: 54 nF @ 25 V
Current - Collector Cutoff (Max): 5 mA
Power - Max: 4300 W
Voltage - Collector Emitter Breakdown (Max): 1700 V
Supplier Device Package: Module
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 600A
Operating Temperature: -40°C ~ 125°C
Configuration: Single Chopper
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
Description: IGBT MODULE 1700V 4300W MODULE
Input Capacitance (Cies) @ Vce: 54 nF @ 25 V
Current - Collector Cutoff (Max): 5 mA
Power - Max: 4300 W
Voltage - Collector Emitter Breakdown (Max): 1700 V
Supplier Device Package: Module
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 600A
Operating Temperature: -40°C ~ 125°C
Configuration: Single Chopper
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
на замовлення 110 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 73334.16 грн |
| IRFR13N15DTRPBF |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 150V 14A DPAK
Description: MOSFET N-CH 150V 14A DPAK
товару немає в наявності
Мінімальне замовлення: 493 шт
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| IPP129N10NF2SAKMA1 |
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Виробник: Infineon Technologies
Description: TRENCH >=100V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 52A (Tc)
Rds On (Max) @ Id, Vgs: 12.9mOhm @ 30A, 10V
Power Dissipation (Max): 3.8W (Ta), 71W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 30µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 50 V
Description: TRENCH >=100V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 52A (Tc)
Rds On (Max) @ Id, Vgs: 12.9mOhm @ 30A, 10V
Power Dissipation (Max): 3.8W (Ta), 71W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 30µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 50 V
на замовлення 977 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 154.21 грн |
| 50+ | 71.76 грн |
| 100+ | 64.28 грн |
| 500+ | 48.03 грн |
| FF300R07ME4B11BPSA1 |
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Виробник: Infineon Technologies
Description: MEDIUM POWER ECONO
Input Capacitance (Cies) @ Vce: 18.5 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 1100 W
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 390 A
Part Status: Active
IGBT Type: Trench Field Stop
Supplier Device Package: AG-ECONOD-3
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 300A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 2 Independent
Description: MEDIUM POWER ECONO
Input Capacitance (Cies) @ Vce: 18.5 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 1100 W
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 390 A
Part Status: Active
IGBT Type: Trench Field Stop
Supplier Device Package: AG-ECONOD-3
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 300A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 2 Independent
на замовлення 13 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 7598.74 грн |
| 10+ | 6081.89 грн |
| IPD90N08S405ATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 80V 90A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 90A, 10V
Power Dissipation (Max): 144W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TO252-3-313
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 80V 90A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 90A, 10V
Power Dissipation (Max): 144W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TO252-3-313
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
Qualification: AEC-Q101
на замовлення 6865 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 195.28 грн |
| 10+ | 121.78 грн |
| 100+ | 83.69 грн |
| 500+ | 63.27 грн |
| 1000+ | 59.76 грн |
| IQE013N04LM6ATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 31A/205A 8TSON
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Supplier Device Package: PG-TSON-8-4
Vgs(th) (Max) @ Id: 2V @ 51µA
Power Dissipation (Max): 2.5W (Ta), 107W (Tc)
Rds On (Max) @ Id, Vgs: 1.35mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 205A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Part Status: Active
Description: MOSFET N-CH 40V 31A/205A 8TSON
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Supplier Device Package: PG-TSON-8-4
Vgs(th) (Max) @ Id: 2V @ 51µA
Power Dissipation (Max): 2.5W (Ta), 107W (Tc)
Rds On (Max) @ Id, Vgs: 1.35mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 205A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Part Status: Active
на замовлення 5846 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 237.12 грн |
| 10+ | 147.60 грн |
| 100+ | 101.69 грн |
| 500+ | 77.02 грн |
| 1000+ | 71.10 грн |
| 2000+ | 66.13 грн |
| IQE013N04LM6CGATMA1 |
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Виробник: Infineon Technologies
Description: 40V N-CH FET SOURCE-DOWN CG 3X3
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 205A (Tc)
Rds On (Max) @ Id, Vgs: 1.35mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 2V @ 51µA
Supplier Device Package: PG-TTFN-9-1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 20 V
Description: 40V N-CH FET SOURCE-DOWN CG 3X3
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 205A (Tc)
Rds On (Max) @ Id, Vgs: 1.35mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 2V @ 51µA
Supplier Device Package: PG-TTFN-9-1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 20 V
товару немає в наявності
Мінімальне замовлення: 5000 шт
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| IQE013N04LM6CGATMA1 |
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Виробник: Infineon Technologies
Description: 40V N-CH FET SOURCE-DOWN CG 3X3
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 205A (Tc)
Rds On (Max) @ Id, Vgs: 1.35mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 2V @ 51µA
Supplier Device Package: PG-TTFN-9-1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 20 V
Description: 40V N-CH FET SOURCE-DOWN CG 3X3
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 205A (Tc)
Rds On (Max) @ Id, Vgs: 1.35mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 2V @ 51µA
Supplier Device Package: PG-TTFN-9-1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 20 V
на замовлення 274 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 272.77 грн |
| 10+ | 171.85 грн |
| 100+ | 119.89 грн |


































