Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (149497) > Сторінка 413 з 2492
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TLE6365GNT | Infineon Technologies | Description: IC REG BUCK 5V 400MA 8DSO-16 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IPD60R2K0PFD7SAUMA1 | Infineon Technologies |
Description: MOSFET N-CH 600V 3A TO252-3Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V Power Dissipation (Max): 20W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 30µA Supplier Device Package: PG-TO252-3-344 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 3.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 134 pF @ 400 V |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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TDA21201-B7 | Infineon Technologies |
Description: IC HALF BRIDGE DRVR 30A TO263-7Packaging: Bulk Features: Bootstrap Circuit Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Interface: PWM Operating Temperature: -25°C ~ 125°C (TJ) Output Configuration: Half Bridge Voltage - Supply: 9V ~ 15V Rds On (Typ): 4.8mOhm LS, 13.3mOhm HS Applications: Synchronous Buck Converters Current - Output / Channel: 30A Technology: Power MOSFET Voltage - Load: 9V ~ 15V Supplier Device Package: PG-TO263-7-2 Fault Protection: Over Temperature, Shoot-Through, UVLO Load Type: Inductive Part Status: Obsolete |
на замовлення 1718 шт: термін постачання 21-31 дні (днів) |
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TDA21201-P7 | Infineon Technologies |
Description: IC HALF BRIDGE DRVR 30A TO220-7Packaging: Tube Features: Bootstrap Circuit Package / Case: TO-220-7 Mounting Type: Through Hole Interface: PWM Operating Temperature: -25°C ~ 125°C (TJ) Output Configuration: Half Bridge Voltage - Supply: 9V ~ 15V Rds On (Typ): 4.8mOhm LS, 13.3mOhm HS Applications: Synchronous Buck Converters Current - Output / Channel: 30A Technology: Power MOSFET Voltage - Load: 9V ~ 15V Supplier Device Package: P-TO220-7-3 Fault Protection: Over Temperature, Shoot-Through, UVLO Load Type: Inductive Part Status: Obsolete |
на замовлення 381 шт: термін постачання 21-31 дні (днів) |
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TDA21535AUMA1 | Infineon Technologies |
Description: IFX POWERSTAGE/DRIVERPackaging: Tape & Reel (TR) Part Status: Active Package / Case: 25-PowerTFQFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TJ) Voltage - Supply: 4.25V ~ 16V Supplier Device Package: PG-IQFN-25-1 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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TDA21535AUMA1 | Infineon Technologies |
Description: IFX POWERSTAGE/DRIVERPackaging: Cut Tape (CT) Part Status: Active Package / Case: 25-PowerTFQFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TJ) Voltage - Supply: 4.25V ~ 16V Supplier Device Package: PG-IQFN-25-1 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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TDA21460AUMA1 | Infineon Technologies |
Description: IC INTEG PWR STAGES IQFN-39Packaging: Tape & Reel (TR) Package / Case: 39-PowerVFQFN Mounting Type: Surface Mount Type: Integrated Power Stages Supplier Device Package: PG-IQFN-39 Part Status: Not For New Designs DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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TDA21460AUMA1 | Infineon Technologies |
Description: IC INTEG PWR STAGES IQFN-39Packaging: Cut Tape (CT) Package / Case: 39-PowerVFQFN Mounting Type: Surface Mount Type: Integrated Power Stages Supplier Device Package: PG-IQFN-39 Part Status: Not For New Designs DigiKey Programmable: Not Verified |
на замовлення 220 шт: термін постачання 21-31 дні (днів) |
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TDA21490AUMA1 | Infineon Technologies |
Description: IFX POWERSTAGE/DRIVERPackaging: Tape & Reel (TR) Package / Case: 39-PowerVFQFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TJ) Voltage - Supply: 4.25V ~ 16V Input Type: Non-Inverting Supplier Device Package: PG-IQFN-39-7 Channel Type: Independent Driven Configuration: High-Side or Low-Side Number of Drivers: 2 Gate Type: N-Channel MOSFET Current - Peak Output (Source, Sink): 90A, 70A Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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TDA21490AUMA1 | Infineon Technologies |
Description: IFX POWERSTAGE/DRIVERPackaging: Cut Tape (CT) Package / Case: 39-PowerVFQFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TJ) Voltage - Supply: 4.25V ~ 16V Input Type: Non-Inverting Supplier Device Package: PG-IQFN-39-7 Channel Type: Independent Driven Configuration: High-Side or Low-Side Number of Drivers: 2 Gate Type: N-Channel MOSFET Current - Peak Output (Source, Sink): 90A, 70A Part Status: Active |
на замовлення 4999 шт: термін постачання 21-31 дні (днів) |
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TDA21462AUMA1 | Infineon Technologies |
Description: IC GATE DRVR C_IFX POWERSTAGEPackaging: Tape & Reel (TR) Part Status: Active Package / Case: 39-PowerVFQFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 4.25V ~ 16V Supplier Device Package: PG-IQFN-39-2 Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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TDA21462AUMA1 | Infineon Technologies |
Description: IC GATE DRVR C_IFX POWERSTAGEPackaging: Cut Tape (CT) Part Status: Active Package / Case: 39-PowerVFQFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 4.25V ~ 16V Supplier Device Package: PG-IQFN-39-2 Grade: Automotive Qualification: AEC-Q101 |
на замовлення 4759 шт: термін постачання 21-31 дні (днів) |
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TDA21801XUMA1 | Infineon Technologies |
Description: IC MOTOR DRIVER 10.8V-13.2V 8DSOPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Function: Controller - Speed Interface: Analog Operating Temperature: 0°C ~ 70°C (TA) Output Configuration: Pre-Driver - Low Side Voltage - Supply: 10.8V ~ 13.2V Applications: Fan Controller Supplier Device Package: PG-DSO-8 Motor Type - AC, DC: Brushed DC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BAV70E6433 | Infineon Technologies |
Description: HIGH SPEED SWITCHING DIODE |
на замовлення 420000 шт: термін постачання 21-31 дні (днів) |
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BAV70E6327 | Infineon Technologies |
Description: HIGH SPEED SWITCHING DIODE |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IRS2113MTRPBF | Infineon Technologies |
Description: IC GATE DRVR HALF-BRIDGE 16MLPQPackaging: Cut Tape (CT) Package / Case: 16-VFQFN Exposed Pad, 14 Leads Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 10V ~ 20V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 600 V Supplier Device Package: 16-MLPQ (4x4) Rise / Fall Time (Typ): 25ns, 17ns Channel Type: Independent Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: IGBT, MOSFET (N-Channel) Logic Voltage - VIL, VIH: 6V, 9.5V Current - Peak Output (Source, Sink): 2.5A, 2.5A Part Status: Active DigiKey Programmable: Not Verified |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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TDA16846 | Infineon Technologies |
Description: POWER FACTOR CONTROLLER Packaging: Bulk Part Status: Active DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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TDA16846HKLA1 | Infineon Technologies |
Description: IC POWER SUPPLY CONTROLLER 14DIPPackaging: Tube Package / Case: 14-DIP (0.300", 7.62mm) Mounting Type: Through Hole Operating Temperature: -25°C ~ 125°C Voltage - Supply: 8V ~ 16V Applications: Power Supply Controller Supplier Device Package: PG-DIP-14-3 Part Status: Obsolete Current - Supply: 5 mA DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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TDA16846GGEGHUMA1 | Infineon Technologies |
Description: IC POWER SUPPLY CONTROLLER DSO14Packaging: Tape & Reel (TR) Package / Case: 14-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -25°C ~ 125°C Voltage - Supply: 8V ~ 16V Applications: Power Supply Controller Supplier Device Package: PG-DSO-14-3 Part Status: Obsolete Current - Supply: 5 mA DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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AUIRLR120NTRL | Infineon Technologies |
Description: MOSFET N-CH 100V 10A DPAKPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 185mOhm @ 6A, 10V Power Dissipation (Max): 48W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-252AA (DPAK) Part Status: Last Time Buy Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IRLR120NTRLPBF | Infineon Technologies |
Description: MOSFET N-CH 100V 10A DPAKPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 185mOhm @ 6A, 10V Power Dissipation (Max): 48W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-252AA (DPAK) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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AUIRF540ZSTRL | Infineon Technologies |
Description: MOSFET N-CH 100V 36A D2PAKPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Rds On (Max) @ Id, Vgs: 26.5mOhm @ 22A, 10V Power Dissipation (Max): 92W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PG-TO263-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1770 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| TLE92672QXXUMA2 | Infineon Technologies |
Description: TLE9267 - SYSTEM BASIS CHIP Packaging: Bulk Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| TLE92682QXXUMA2 | Infineon Technologies |
Description: TLE9268-2QX - SYSTEM BASIS CHIP Packaging: Bulk Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| TLE92603QXXUMA1 | Infineon Technologies |
Description: MID-RANGE SYSTEM BASIS CHIP |
на замовлення 3057 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | |||||||||||||||||
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TLE9273QXV33XUMA1 | Infineon Technologies | Description: HIGH-END SYSTEM BASIS CHIP |
на замовлення 4842 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
| TLE82642EXUMA2 | Infineon Technologies |
Description: IC SYSTEM BASIS CHIP DSO-36Packaging: Bulk Part Status: Discontinued at Digi-Key DigiKey Programmable: Not Verified |
на замовлення 102000 шт: термін постачання 21-31 дні (днів) |
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| IPW60R199CP | Infineon Technologies |
Description: 16A, 600V, 0.199OHM, N-CHANNEL MPackaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Rds On (Max) @ Id, Vgs: 199mOhm @ 9.9A, 10V Power Dissipation (Max): 139W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 660µA Supplier Device Package: PG-TO247-3-21 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1520 pF @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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IRLR024NTRLPBF | Infineon Technologies |
Description: MOSFET N-CH 55V 17A DPAKPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 65mOhm @ 10A, 10V Power Dissipation (Max): 45W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-252AA (DPAK) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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TLE63893GV50XUMA2 | Infineon Technologies |
Description: IC REG CTRLR BUCK 14DSOPPackaging: Tape & Reel (TR) Package / Case: 14-SOIC (0.154", 3.90mm Width) Output Type: Transistor Driver Mounting Type: Surface Mount Function: Step-Down Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Positive Frequency - Switching: 360kHz Topology: Buck Voltage - Supply (Vcc/Vdd): 5V ~ 60V Supplier Device Package: PG-DSO-14-1 Synchronous Rectifier: Yes Control Features: Current Limit, Enable, Reset Output Phases: 1 Duty Cycle (Max): 100% Clock Sync: Yes Number of Outputs: 1 Grade: Automotive Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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TLE63893GV50XUMA2 | Infineon Technologies |
Description: IC REG CTRLR BUCK 14DSOPPackaging: Cut Tape (CT) Package / Case: 14-SOIC (0.154", 3.90mm Width) Output Type: Transistor Driver Mounting Type: Surface Mount Function: Step-Down Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Positive Frequency - Switching: 360kHz Topology: Buck Voltage - Supply (Vcc/Vdd): 5V ~ 60V Supplier Device Package: PG-DSO-14-1 Synchronous Rectifier: Yes Control Features: Current Limit, Enable, Reset Output Phases: 1 Duty Cycle (Max): 100% Clock Sync: Yes Number of Outputs: 1 Grade: Automotive Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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TLE63892GV50XUMA2 | Infineon Technologies |
Description: IC REG CTRLR BUCK 14DSOPPackaging: Cut Tape (CT) Package / Case: 14-SOIC (0.154", 3.90mm Width) Output Type: Transistor Driver Mounting Type: Surface Mount Function: Step-Down Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Positive Frequency - Switching: 360kHz Topology: Buck Voltage - Supply (Vcc/Vdd): 5V ~ 60V Supplier Device Package: PG-DSO-14-1 Synchronous Rectifier: Yes Control Features: Current Limit, Enable, Reset Output Phases: 1 Duty Cycle (Max): 100% Clock Sync: Yes Part Status: Last Time Buy Number of Outputs: 1 Grade: Automotive Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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2ED28073J06FXUMA1 | Infineon Technologies |
Description: IC GATE DRVR HALF-BRIDGE 8SOICPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Part Status: Active Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 10V ~ 20V Input Type: CMOS, TTL High Side Voltage - Max (Bootstrap): 600 V Channel Type: Independent Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: IGBT, MOSFET (N-Channel) Logic Voltage - VIL, VIH: 0.8V, 2.2 V DigiKey Programmable: Not Verified Rise / Fall Time (Typ): 1.5µs, 225ns Current - Peak Output (Source, Sink): 20mA, 80mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IPP60R165CP | Infineon Technologies |
Description: 21A, 600V, 0.165OHM, N-CHANNEL MPackaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Rds On (Max) @ Id, Vgs: 165mOhm @ 12A, 10V Power Dissipation (Max): 192W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 790µA Supplier Device Package: PG-TO220-3-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BAS4005WH6327XTSA1 | Infineon Technologies |
Description: DIODE ARR SCHOT 40V 120MA SOT323Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 100 ps Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 120mA (DC) Supplier Device Package: PG-SOT323 Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA Current - Reverse Leakage @ Vr: 1 µA @ 30 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 27000 шт: термін постачання 21-31 дні (днів) |
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BAT62E6327HTSA1 | Infineon Technologies |
Description: DIODE SCHOTTKY 40V 100MW SOT143Packaging: Tape & Reel (TR) Package / Case: TO-253-4, TO-253AA Diode Type: Schottky - 2 Independent Operating Temperature: 150°C (TJ) Capacitance @ Vr, F: 0.6pF @ 0V, 1MHz Voltage - Peak Reverse (Max): 40V Supplier Device Package: PG-SOT-143-3D Part Status: Active Current - Max: 20 mA Power Dissipation (Max): 100 mW |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
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PSB2170HV1.1DRY | Infineon Technologies |
Description: ACOUSTIC ECHO CANCELLER ACE Packaging: Bulk |
на замовлення 504 шт: термін постачання 21-31 дні (днів) |
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PSB2170HV1.1 | Infineon Technologies |
Description: ACOUSTIC ECHO CANCELLER ACE Packaging: Bulk |
на замовлення 588 шт: термін постачання 21-31 дні (днів) |
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PSB2170HV2.1 | Infineon Technologies |
Description: ACOUSTIC ECHO CANCELLER ACE Packaging: Bulk |
на замовлення 476 шт: термін постачання 21-31 дні (днів) |
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1ED3125MU12FXUMA1 | Infineon Technologies |
Description: DIGITAL ISO 3KV 1CH GT DVR DSO8Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C Current - Peak Output: 14A Technology: Magnetic Coupling Current - Output High, Low: 4A, 4A Voltage - Isolation: 3000Vrms Approval Agency: UL Supplier Device Package: PG-DSO-8 Rise / Fall Time (Typ): 30ns, 30ns (Max) Common Mode Transient Immunity (Min): 200kV/µs Pulse Width Distortion (Max): 5ns Part Status: Active Number of Channels: 1 Voltage - Output Supply: 10V ~ 35V |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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1ED3125MU12FXUMA1 | Infineon Technologies |
Description: DIGITAL ISO 3KV 1CH GT DVR DSO8Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C Current - Peak Output: 14A Technology: Magnetic Coupling Current - Output High, Low: 4A, 4A Voltage - Isolation: 3000Vrms Approval Agency: UL Supplier Device Package: PG-DSO-8 Rise / Fall Time (Typ): 30ns, 30ns (Max) Common Mode Transient Immunity (Min): 200kV/µs Pulse Width Distortion (Max): 5ns Part Status: Active Number of Channels: 1 Voltage - Output Supply: 10V ~ 35V |
на замовлення 3973 шт: термін постачання 21-31 дні (днів) |
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1ED3124MU12FXUMA1 | Infineon Technologies |
Description: DIGITAL ISO 3KV 1CH GT DVR DSO8Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C Current - Peak Output: 14A Technology: Magnetic Coupling Current - Output High, Low: 6A, 6A Voltage - Isolation: 3000Vrms Approval Agency: UL Supplier Device Package: PG-DSO-8 Rise / Fall Time (Typ): 30ns, 30ns (Max) Common Mode Transient Immunity (Min): 200kV/µs Pulse Width Distortion (Max): 5ns Part Status: Active Number of Channels: 1 Voltage - Output Supply: 10V ~ 35V |
на замовлення 7500 шт: термін постачання 21-31 дні (днів) |
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1ED3124MU12FXUMA1 | Infineon Technologies |
Description: DIGITAL ISO 3KV 1CH GT DVR DSO8Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C Current - Peak Output: 14A Technology: Magnetic Coupling Current - Output High, Low: 6A, 6A Voltage - Isolation: 3000Vrms Approval Agency: UL Supplier Device Package: PG-DSO-8 Rise / Fall Time (Typ): 30ns, 30ns (Max) Common Mode Transient Immunity (Min): 200kV/µs Pulse Width Distortion (Max): 5ns Part Status: Active Number of Channels: 1 Voltage - Output Supply: 10V ~ 35V |
на замовлення 9488 шт: термін постачання 21-31 дні (днів) |
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DEMOBOARDTLE7182EMTOBO1 | Infineon Technologies |
Description: EVAL BOARD FOR TLE7182EM Packaging: Bulk Function: Gate Driver Type: Power Management Utilized IC / Part: TLE7182EM Supplied Contents: Board(s) Contents: Board(s) |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
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TLE7182EM | Infineon Technologies |
Description: TLE7182 - GATE DRIVERPackaging: Bulk Package / Case: 24-LSSOP (0.154", 3.90mm Width) Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 7V ~ 34V Input Type: Inverting, Non-Inverting High Side Voltage - Max (Bootstrap): 55 V Supplier Device Package: PG-SSOP-24-4 Rise / Fall Time (Typ): 250ns, 200ns Channel Type: Synchronous Driven Configuration: Half-Bridge Number of Drivers: 4 Gate Type: N-Channel MOSFET Logic Voltage - VIL, VIH: 1V, 2V Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IPL65R099C7AUMA1 | Infineon Technologies |
Description: MOSFET N-CH 650V 21A 4VSONPackaging: Tape & Reel (TR) Package / Case: 4-PowerTSFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Rds On (Max) @ Id, Vgs: 99mOhm @ 5.9A, 10V Power Dissipation (Max): 128W (Tc) Vgs(th) (Max) @ Id: 4V @ 590µA Supplier Device Package: PG-VSON-4 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2140 pF @ 400 V |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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AIKB50N65DH5ATMA1 | Infineon Technologies |
Description: IGBT NPT 650V 50A TO263-3-2Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Input Type: Standard Supplier Device Package: PG-TO263-3-2 IGBT Type: NPT Part Status: Active Current - Collector (Ic) (Max): 50 A Voltage - Collector Emitter Breakdown (Max): 650 V |
на замовлення 3980 шт: термін постачання 21-31 дні (днів) |
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| FS400R07A1E3 | Infineon Technologies |
Description: IGBT MODULEPackaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 400A NTC Thermistor: Yes Supplier Device Package: AG-HYBRID1-1 IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 500 A Voltage - Collector Emitter Breakdown (Max): 650 V Power - Max: 1250 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 26 nF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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FS400R07A1E3H5BPSA1 | Infineon Technologies |
Description: IGBT MODULEPackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Full Bridge Inverter Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 400A NTC Thermistor: Yes Part Status: Obsolete Current - Collector (Ic) (Max): 500 A Voltage - Collector Emitter Breakdown (Max): 650 V Power - Max: 750 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 26 nF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FS400R07A1E3BOMA1 | Infineon Technologies |
Description: IGBT MOD 650V 500A AG-HYBRID1-1Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 400A NTC Thermistor: Yes Supplier Device Package: AG-HYBRID1-1 IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 500 A Voltage - Collector Emitter Breakdown (Max): 650 V Power - Max: 1250 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 26 nF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| BAR8602ELSE6327XTSA1 | Infineon Technologies |
Description: RF PIN DIODE > ANTENNA SWITCH Packaging: Bulk Part Status: Active |
на замовлення 105000 шт: термін постачання 21-31 дні (днів) |
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BAT6404E6433HTMA1 | Infineon Technologies |
Description: DIODE ARR SCHOTT 40V 250MA SOT23Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 5 ns Technology: Schottky Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 250mA Supplier Device Package: PG-SOT23 Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 mA Current - Reverse Leakage @ Vr: 2 µA @ 30 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 20000 шт: термін постачання 21-31 дні (днів) |
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BAS4004E6433HTMA1 | Infineon Technologies |
Description: DIODE ARR SCHOTT 40V 120MA SOT23Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 100 ps Technology: Schottky Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 120mA (DC) Supplier Device Package: PG-SOT23 Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA Current - Reverse Leakage @ Vr: 1 µA @ 30 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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CY7C1360C-166BZC | Infineon Technologies |
Description: IC SRAM 9MBIT PARALLEL 165FBGAPackaging: Tray Package / Case: 165-LBGA Mounting Type: Surface Mount Memory Size: 9Mbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 3.135V ~ 3.6V Technology: SRAM - Synchronous, SDR Clock Frequency: 166 MHz Memory Format: SRAM Supplier Device Package: 165-FBGA (13x15) Memory Interface: Parallel Access Time: 3.5 ns Memory Organization: 256K x 36 DigiKey Programmable: Not Verified |
на замовлення 287 шт: термін постачання 21-31 дні (днів) |
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IRLR3636TRLPBF | Infineon Technologies |
Description: MOSFET N-CH 60V 50A DPAKPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 6.8mOhm @ 50A, 10V Power Dissipation (Max): 143W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 100µA Supplier Device Package: TO-252AA (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 3779 pF @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IRFR5410TRLPBF | Infineon Technologies |
Description: MOSFET P-CH 100V 13A DPAKPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Rds On (Max) @ Id, Vgs: 205mOhm @ 7.8A, 10V Power Dissipation (Max): 66W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA (DPAK) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BCR 149T E6327 | Infineon Technologies |
Description: TRANS PREBIAS NPN 50V 0.07A SC75Packaging: Tape & Reel (TR) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V Supplier Device Package: PG-SC75-3D Current - Collector (Ic) (Max): 70 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 250 mW Frequency - Transition: 150 MHz Resistor - Base (R1): 47 kOhms Resistors Included: R1 Only |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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AUIRF7316QTR | Infineon Technologies |
Description: MOSFET 2P-CH 30V 8SOICPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 30V Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 25V Rds On (Max) @ Id, Vgs: 58mOhm @ 4.9A, 10V Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Part Status: Not For New Designs |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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AUIRF7316QTR | Infineon Technologies |
Description: MOSFET 2P-CH 30V 8SOICPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 30V Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 25V Rds On (Max) @ Id, Vgs: 58mOhm @ 4.9A, 10V Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Part Status: Not For New Designs |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
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IPA030N10NF2SXKSA1 | Infineon Technologies |
Description: TRENCH >=100V PG-TO220-3Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 83A (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 50A, 10V Power Dissipation (Max): 41W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 169µA Supplier Device Package: PG-TO220 Full Pack Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 50 V |
на замовлення 450 шт: термін постачання 21-31 дні (днів) |
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| TLE6365GNT |
Виробник: Infineon Technologies
Description: IC REG BUCK 5V 400MA 8DSO-16
Description: IC REG BUCK 5V 400MA 8DSO-16
товару немає в наявності
В кошику
од. на суму грн.
| IPD60R2K0PFD7SAUMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 3A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 30µA
Supplier Device Package: PG-TO252-3-344
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 3.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 134 pF @ 400 V
Description: MOSFET N-CH 600V 3A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 30µA
Supplier Device Package: PG-TO252-3-344
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 3.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 134 pF @ 400 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 20.62 грн |
| TDA21201-B7 |
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Виробник: Infineon Technologies
Description: IC HALF BRIDGE DRVR 30A TO263-7
Packaging: Bulk
Features: Bootstrap Circuit
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -25°C ~ 125°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 9V ~ 15V
Rds On (Typ): 4.8mOhm LS, 13.3mOhm HS
Applications: Synchronous Buck Converters
Current - Output / Channel: 30A
Technology: Power MOSFET
Voltage - Load: 9V ~ 15V
Supplier Device Package: PG-TO263-7-2
Fault Protection: Over Temperature, Shoot-Through, UVLO
Load Type: Inductive
Part Status: Obsolete
Description: IC HALF BRIDGE DRVR 30A TO263-7
Packaging: Bulk
Features: Bootstrap Circuit
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -25°C ~ 125°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 9V ~ 15V
Rds On (Typ): 4.8mOhm LS, 13.3mOhm HS
Applications: Synchronous Buck Converters
Current - Output / Channel: 30A
Technology: Power MOSFET
Voltage - Load: 9V ~ 15V
Supplier Device Package: PG-TO263-7-2
Fault Protection: Over Temperature, Shoot-Through, UVLO
Load Type: Inductive
Part Status: Obsolete
на замовлення 1718 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 148+ | 147.34 грн |
| TDA21201-P7 |
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Виробник: Infineon Technologies
Description: IC HALF BRIDGE DRVR 30A TO220-7
Packaging: Tube
Features: Bootstrap Circuit
Package / Case: TO-220-7
Mounting Type: Through Hole
Interface: PWM
Operating Temperature: -25°C ~ 125°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 9V ~ 15V
Rds On (Typ): 4.8mOhm LS, 13.3mOhm HS
Applications: Synchronous Buck Converters
Current - Output / Channel: 30A
Technology: Power MOSFET
Voltage - Load: 9V ~ 15V
Supplier Device Package: P-TO220-7-3
Fault Protection: Over Temperature, Shoot-Through, UVLO
Load Type: Inductive
Part Status: Obsolete
Description: IC HALF BRIDGE DRVR 30A TO220-7
Packaging: Tube
Features: Bootstrap Circuit
Package / Case: TO-220-7
Mounting Type: Through Hole
Interface: PWM
Operating Temperature: -25°C ~ 125°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 9V ~ 15V
Rds On (Typ): 4.8mOhm LS, 13.3mOhm HS
Applications: Synchronous Buck Converters
Current - Output / Channel: 30A
Technology: Power MOSFET
Voltage - Load: 9V ~ 15V
Supplier Device Package: P-TO220-7-3
Fault Protection: Over Temperature, Shoot-Through, UVLO
Load Type: Inductive
Part Status: Obsolete
на замовлення 381 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 148+ | 147.34 грн |
| TDA21535AUMA1 |
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Виробник: Infineon Technologies
Description: IFX POWERSTAGE/DRIVER
Packaging: Tape & Reel (TR)
Part Status: Active
Package / Case: 25-PowerTFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 4.25V ~ 16V
Supplier Device Package: PG-IQFN-25-1
Description: IFX POWERSTAGE/DRIVER
Packaging: Tape & Reel (TR)
Part Status: Active
Package / Case: 25-PowerTFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 4.25V ~ 16V
Supplier Device Package: PG-IQFN-25-1
товару немає в наявності
В кошику
од. на суму грн.
| TDA21535AUMA1 |
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Виробник: Infineon Technologies
Description: IFX POWERSTAGE/DRIVER
Packaging: Cut Tape (CT)
Part Status: Active
Package / Case: 25-PowerTFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 4.25V ~ 16V
Supplier Device Package: PG-IQFN-25-1
Description: IFX POWERSTAGE/DRIVER
Packaging: Cut Tape (CT)
Part Status: Active
Package / Case: 25-PowerTFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 4.25V ~ 16V
Supplier Device Package: PG-IQFN-25-1
товару немає в наявності
В кошику
од. на суму грн.
| TDA21460AUMA1 |
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Виробник: Infineon Technologies
Description: IC INTEG PWR STAGES IQFN-39
Packaging: Tape & Reel (TR)
Package / Case: 39-PowerVFQFN
Mounting Type: Surface Mount
Type: Integrated Power Stages
Supplier Device Package: PG-IQFN-39
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
Description: IC INTEG PWR STAGES IQFN-39
Packaging: Tape & Reel (TR)
Package / Case: 39-PowerVFQFN
Mounting Type: Surface Mount
Type: Integrated Power Stages
Supplier Device Package: PG-IQFN-39
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
| TDA21460AUMA1 |
![]() |
Виробник: Infineon Technologies
Description: IC INTEG PWR STAGES IQFN-39
Packaging: Cut Tape (CT)
Package / Case: 39-PowerVFQFN
Mounting Type: Surface Mount
Type: Integrated Power Stages
Supplier Device Package: PG-IQFN-39
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
Description: IC INTEG PWR STAGES IQFN-39
Packaging: Cut Tape (CT)
Package / Case: 39-PowerVFQFN
Mounting Type: Surface Mount
Type: Integrated Power Stages
Supplier Device Package: PG-IQFN-39
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
на замовлення 220 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 309.98 грн |
| 10+ | 226.50 грн |
| 25+ | 208.43 грн |
| 100+ | 176.91 грн |
| TDA21490AUMA1 |
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Виробник: Infineon Technologies
Description: IFX POWERSTAGE/DRIVER
Packaging: Tape & Reel (TR)
Package / Case: 39-PowerVFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 4.25V ~ 16V
Input Type: Non-Inverting
Supplier Device Package: PG-IQFN-39-7
Channel Type: Independent
Driven Configuration: High-Side or Low-Side
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Current - Peak Output (Source, Sink): 90A, 70A
Part Status: Active
Description: IFX POWERSTAGE/DRIVER
Packaging: Tape & Reel (TR)
Package / Case: 39-PowerVFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 4.25V ~ 16V
Input Type: Non-Inverting
Supplier Device Package: PG-IQFN-39-7
Channel Type: Independent
Driven Configuration: High-Side or Low-Side
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Current - Peak Output (Source, Sink): 90A, 70A
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
| TDA21490AUMA1 |
![]() |
Виробник: Infineon Technologies
Description: IFX POWERSTAGE/DRIVER
Packaging: Cut Tape (CT)
Package / Case: 39-PowerVFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 4.25V ~ 16V
Input Type: Non-Inverting
Supplier Device Package: PG-IQFN-39-7
Channel Type: Independent
Driven Configuration: High-Side or Low-Side
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Current - Peak Output (Source, Sink): 90A, 70A
Part Status: Active
Description: IFX POWERSTAGE/DRIVER
Packaging: Cut Tape (CT)
Package / Case: 39-PowerVFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 4.25V ~ 16V
Input Type: Non-Inverting
Supplier Device Package: PG-IQFN-39-7
Channel Type: Independent
Driven Configuration: High-Side or Low-Side
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Current - Peak Output (Source, Sink): 90A, 70A
Part Status: Active
на замовлення 4999 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 368.74 грн |
| 10+ | 270.13 грн |
| 25+ | 249.07 грн |
| 100+ | 211.96 грн |
| 250+ | 201.58 грн |
| 500+ | 195.32 грн |
| 1000+ | 187.05 грн |
| 2500+ | 181.71 грн |
| TDA21462AUMA1 |
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Виробник: Infineon Technologies
Description: IC GATE DRVR C_IFX POWERSTAGE
Packaging: Tape & Reel (TR)
Part Status: Active
Package / Case: 39-PowerVFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.25V ~ 16V
Supplier Device Package: PG-IQFN-39-2
Grade: Automotive
Qualification: AEC-Q101
Description: IC GATE DRVR C_IFX POWERSTAGE
Packaging: Tape & Reel (TR)
Part Status: Active
Package / Case: 39-PowerVFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.25V ~ 16V
Supplier Device Package: PG-IQFN-39-2
Grade: Automotive
Qualification: AEC-Q101
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| TDA21462AUMA1 |
![]() |
Виробник: Infineon Technologies
Description: IC GATE DRVR C_IFX POWERSTAGE
Packaging: Cut Tape (CT)
Part Status: Active
Package / Case: 39-PowerVFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.25V ~ 16V
Supplier Device Package: PG-IQFN-39-2
Grade: Automotive
Qualification: AEC-Q101
Description: IC GATE DRVR C_IFX POWERSTAGE
Packaging: Cut Tape (CT)
Part Status: Active
Package / Case: 39-PowerVFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.25V ~ 16V
Supplier Device Package: PG-IQFN-39-2
Grade: Automotive
Qualification: AEC-Q101
на замовлення 4759 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 341.49 грн |
| 10+ | 249.63 грн |
| 25+ | 229.91 грн |
| 100+ | 195.48 грн |
| 250+ | 185.80 грн |
| 500+ | 179.96 грн |
| 1000+ | 172.29 грн |
| 2500+ | 167.30 грн |
| TDA21801XUMA1 |
![]() |
Виробник: Infineon Technologies
Description: IC MOTOR DRIVER 10.8V-13.2V 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Function: Controller - Speed
Interface: Analog
Operating Temperature: 0°C ~ 70°C (TA)
Output Configuration: Pre-Driver - Low Side
Voltage - Supply: 10.8V ~ 13.2V
Applications: Fan Controller
Supplier Device Package: PG-DSO-8
Motor Type - AC, DC: Brushed DC
Description: IC MOTOR DRIVER 10.8V-13.2V 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Function: Controller - Speed
Interface: Analog
Operating Temperature: 0°C ~ 70°C (TA)
Output Configuration: Pre-Driver - Low Side
Voltage - Supply: 10.8V ~ 13.2V
Applications: Fan Controller
Supplier Device Package: PG-DSO-8
Motor Type - AC, DC: Brushed DC
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| BAV70E6433 |
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Виробник: Infineon Technologies
Description: HIGH SPEED SWITCHING DIODE
Description: HIGH SPEED SWITCHING DIODE
на замовлення 420000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10122+ | 2.58 грн |
| BAV70E6327 |
![]() |
Виробник: Infineon Technologies
Description: HIGH SPEED SWITCHING DIODE
Description: HIGH SPEED SWITCHING DIODE
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| IRS2113MTRPBF |
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Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 16MLPQ
Packaging: Cut Tape (CT)
Package / Case: 16-VFQFN Exposed Pad, 14 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 16-MLPQ (4x4)
Rise / Fall Time (Typ): 25ns, 17ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 6V, 9.5V
Current - Peak Output (Source, Sink): 2.5A, 2.5A
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 16MLPQ
Packaging: Cut Tape (CT)
Package / Case: 16-VFQFN Exposed Pad, 14 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 16-MLPQ (4x4)
Rise / Fall Time (Typ): 25ns, 17ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 6V, 9.5V
Current - Peak Output (Source, Sink): 2.5A, 2.5A
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 172.02 грн |
| 10+ | 122.93 грн |
| 25+ | 112.25 грн |
| 100+ | 94.30 грн |
| 250+ | 89.03 грн |
| 500+ | 85.86 грн |
| 1000+ | 81.88 грн |
| TDA16846 |
Виробник: Infineon Technologies
Description: POWER FACTOR CONTROLLER
Packaging: Bulk
Part Status: Active
DigiKey Programmable: Not Verified
Description: POWER FACTOR CONTROLLER
Packaging: Bulk
Part Status: Active
DigiKey Programmable: Not Verified
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| TDA16846HKLA1 |
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Виробник: Infineon Technologies
Description: IC POWER SUPPLY CONTROLLER 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -25°C ~ 125°C
Voltage - Supply: 8V ~ 16V
Applications: Power Supply Controller
Supplier Device Package: PG-DIP-14-3
Part Status: Obsolete
Current - Supply: 5 mA
DigiKey Programmable: Not Verified
Description: IC POWER SUPPLY CONTROLLER 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -25°C ~ 125°C
Voltage - Supply: 8V ~ 16V
Applications: Power Supply Controller
Supplier Device Package: PG-DIP-14-3
Part Status: Obsolete
Current - Supply: 5 mA
DigiKey Programmable: Not Verified
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| TDA16846GGEGHUMA1 |
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Виробник: Infineon Technologies
Description: IC POWER SUPPLY CONTROLLER DSO14
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -25°C ~ 125°C
Voltage - Supply: 8V ~ 16V
Applications: Power Supply Controller
Supplier Device Package: PG-DSO-14-3
Part Status: Obsolete
Current - Supply: 5 mA
DigiKey Programmable: Not Verified
Description: IC POWER SUPPLY CONTROLLER DSO14
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -25°C ~ 125°C
Voltage - Supply: 8V ~ 16V
Applications: Power Supply Controller
Supplier Device Package: PG-DSO-14-3
Part Status: Obsolete
Current - Supply: 5 mA
DigiKey Programmable: Not Verified
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| AUIRLR120NTRL |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 10A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 6A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 100V 10A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 6A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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| IRLR120NTRLPBF |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 10A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 6A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V
Description: MOSFET N-CH 100V 10A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 6A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V
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| AUIRF540ZSTRL |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 36A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 26.5mOhm @ 22A, 10V
Power Dissipation (Max): 92W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO263-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1770 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 100V 36A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 26.5mOhm @ 22A, 10V
Power Dissipation (Max): 92W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO263-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1770 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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| TLE92672QXXUMA2 |
Виробник: Infineon Technologies
Description: TLE9267 - SYSTEM BASIS CHIP
Packaging: Bulk
Part Status: Active
Description: TLE9267 - SYSTEM BASIS CHIP
Packaging: Bulk
Part Status: Active
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| TLE92682QXXUMA2 |
Виробник: Infineon Technologies
Description: TLE9268-2QX - SYSTEM BASIS CHIP
Packaging: Bulk
Part Status: Active
Description: TLE9268-2QX - SYSTEM BASIS CHIP
Packaging: Bulk
Part Status: Active
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| TLE92603QXXUMA1 |
![]() |
Виробник: Infineon Technologies
Description: MID-RANGE SYSTEM BASIS CHIP
Description: MID-RANGE SYSTEM BASIS CHIP
на замовлення 3057 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| TLE9273QXV33XUMA1 |
Виробник: Infineon Technologies
Description: HIGH-END SYSTEM BASIS CHIP
Description: HIGH-END SYSTEM BASIS CHIP
на замовлення 4842 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| TLE82642EXUMA2 |
![]() |
Виробник: Infineon Technologies
Description: IC SYSTEM BASIS CHIP DSO-36
Packaging: Bulk
Part Status: Discontinued at Digi-Key
DigiKey Programmable: Not Verified
Description: IC SYSTEM BASIS CHIP DSO-36
Packaging: Bulk
Part Status: Discontinued at Digi-Key
DigiKey Programmable: Not Verified
на замовлення 102000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 78+ | 315.50 грн |
| IPW60R199CP |
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Виробник: Infineon Technologies
Description: 16A, 600V, 0.199OHM, N-CHANNEL M
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 199mOhm @ 9.9A, 10V
Power Dissipation (Max): 139W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 660µA
Supplier Device Package: PG-TO247-3-21
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1520 pF @ 100 V
Description: 16A, 600V, 0.199OHM, N-CHANNEL M
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 199mOhm @ 9.9A, 10V
Power Dissipation (Max): 139W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 660µA
Supplier Device Package: PG-TO247-3-21
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1520 pF @ 100 V
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| IRLR024NTRLPBF |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 17A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 10A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 25 V
Description: MOSFET N-CH 55V 17A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 10A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 25 V
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| TLE63893GV50XUMA2 |
![]() |
Виробник: Infineon Technologies
Description: IC REG CTRLR BUCK 14DSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: 360kHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 5V ~ 60V
Supplier Device Package: PG-DSO-14-1
Synchronous Rectifier: Yes
Control Features: Current Limit, Enable, Reset
Output Phases: 1
Duty Cycle (Max): 100%
Clock Sync: Yes
Number of Outputs: 1
Grade: Automotive
Qualification: AEC-Q100
Description: IC REG CTRLR BUCK 14DSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: 360kHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 5V ~ 60V
Supplier Device Package: PG-DSO-14-1
Synchronous Rectifier: Yes
Control Features: Current Limit, Enable, Reset
Output Phases: 1
Duty Cycle (Max): 100%
Clock Sync: Yes
Number of Outputs: 1
Grade: Automotive
Qualification: AEC-Q100
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| TLE63893GV50XUMA2 |
![]() |
Виробник: Infineon Technologies
Description: IC REG CTRLR BUCK 14DSOP
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: 360kHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 5V ~ 60V
Supplier Device Package: PG-DSO-14-1
Synchronous Rectifier: Yes
Control Features: Current Limit, Enable, Reset
Output Phases: 1
Duty Cycle (Max): 100%
Clock Sync: Yes
Number of Outputs: 1
Grade: Automotive
Qualification: AEC-Q100
Description: IC REG CTRLR BUCK 14DSOP
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: 360kHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 5V ~ 60V
Supplier Device Package: PG-DSO-14-1
Synchronous Rectifier: Yes
Control Features: Current Limit, Enable, Reset
Output Phases: 1
Duty Cycle (Max): 100%
Clock Sync: Yes
Number of Outputs: 1
Grade: Automotive
Qualification: AEC-Q100
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| TLE63892GV50XUMA2 |
![]() |
Виробник: Infineon Technologies
Description: IC REG CTRLR BUCK 14DSOP
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: 360kHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 5V ~ 60V
Supplier Device Package: PG-DSO-14-1
Synchronous Rectifier: Yes
Control Features: Current Limit, Enable, Reset
Output Phases: 1
Duty Cycle (Max): 100%
Clock Sync: Yes
Part Status: Last Time Buy
Number of Outputs: 1
Grade: Automotive
Qualification: AEC-Q100
Description: IC REG CTRLR BUCK 14DSOP
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: 360kHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 5V ~ 60V
Supplier Device Package: PG-DSO-14-1
Synchronous Rectifier: Yes
Control Features: Current Limit, Enable, Reset
Output Phases: 1
Duty Cycle (Max): 100%
Clock Sync: Yes
Part Status: Last Time Buy
Number of Outputs: 1
Grade: Automotive
Qualification: AEC-Q100
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| 2ED28073J06FXUMA1 |
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Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOIC
Part Status: Active
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
Input Type: CMOS, TTL
High Side Voltage - Max (Bootstrap): 600 V
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.2 V
DigiKey Programmable: Not Verified
Rise / Fall Time (Typ): 1.5µs, 225ns
Current - Peak Output (Source, Sink): 20mA, 80mA
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOIC
Part Status: Active
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
Input Type: CMOS, TTL
High Side Voltage - Max (Bootstrap): 600 V
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.2 V
DigiKey Programmable: Not Verified
Rise / Fall Time (Typ): 1.5µs, 225ns
Current - Peak Output (Source, Sink): 20mA, 80mA
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| IPP60R165CP |
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Виробник: Infineon Technologies
Description: 21A, 600V, 0.165OHM, N-CHANNEL M
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 12A, 10V
Power Dissipation (Max): 192W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 790µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 100 V
Description: 21A, 600V, 0.165OHM, N-CHANNEL M
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 12A, 10V
Power Dissipation (Max): 192W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 790µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 100 V
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| BAS4005WH6327XTSA1 |
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Виробник: Infineon Technologies
Description: DIODE ARR SCHOT 40V 120MA SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 100 ps
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 120mA (DC)
Supplier Device Package: PG-SOT323
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 1 µA @ 30 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ARR SCHOT 40V 120MA SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 100 ps
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 120mA (DC)
Supplier Device Package: PG-SOT323
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 1 µA @ 30 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 27000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 2.99 грн |
| 6000+ | 2.86 грн |
| BAT62E6327HTSA1 |
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Виробник: Infineon Technologies
Description: DIODE SCHOTTKY 40V 100MW SOT143
Packaging: Tape & Reel (TR)
Package / Case: TO-253-4, TO-253AA
Diode Type: Schottky - 2 Independent
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.6pF @ 0V, 1MHz
Voltage - Peak Reverse (Max): 40V
Supplier Device Package: PG-SOT-143-3D
Part Status: Active
Current - Max: 20 mA
Power Dissipation (Max): 100 mW
Description: DIODE SCHOTTKY 40V 100MW SOT143
Packaging: Tape & Reel (TR)
Package / Case: TO-253-4, TO-253AA
Diode Type: Schottky - 2 Independent
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.6pF @ 0V, 1MHz
Voltage - Peak Reverse (Max): 40V
Supplier Device Package: PG-SOT-143-3D
Part Status: Active
Current - Max: 20 mA
Power Dissipation (Max): 100 mW
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 10.42 грн |
| 6000+ | 9.16 грн |
| 9000+ | 8.71 грн |
| PSB2170HV1.1DRY |
на замовлення 504 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 1437.95 грн |
| PSB2170HV1.1 |
на замовлення 588 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 1598.40 грн |
| PSB2170HV2.1 |
на замовлення 476 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 1598.40 грн |
| 1ED3125MU12FXUMA1 |
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Виробник: Infineon Technologies
Description: DIGITAL ISO 3KV 1CH GT DVR DSO8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Current - Peak Output: 14A
Technology: Magnetic Coupling
Current - Output High, Low: 4A, 4A
Voltage - Isolation: 3000Vrms
Approval Agency: UL
Supplier Device Package: PG-DSO-8
Rise / Fall Time (Typ): 30ns, 30ns (Max)
Common Mode Transient Immunity (Min): 200kV/µs
Pulse Width Distortion (Max): 5ns
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 10V ~ 35V
Description: DIGITAL ISO 3KV 1CH GT DVR DSO8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Current - Peak Output: 14A
Technology: Magnetic Coupling
Current - Output High, Low: 4A, 4A
Voltage - Isolation: 3000Vrms
Approval Agency: UL
Supplier Device Package: PG-DSO-8
Rise / Fall Time (Typ): 30ns, 30ns (Max)
Common Mode Transient Immunity (Min): 200kV/µs
Pulse Width Distortion (Max): 5ns
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 10V ~ 35V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 71.61 грн |
| 1ED3125MU12FXUMA1 |
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Виробник: Infineon Technologies
Description: DIGITAL ISO 3KV 1CH GT DVR DSO8
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Current - Peak Output: 14A
Technology: Magnetic Coupling
Current - Output High, Low: 4A, 4A
Voltage - Isolation: 3000Vrms
Approval Agency: UL
Supplier Device Package: PG-DSO-8
Rise / Fall Time (Typ): 30ns, 30ns (Max)
Common Mode Transient Immunity (Min): 200kV/µs
Pulse Width Distortion (Max): 5ns
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 10V ~ 35V
Description: DIGITAL ISO 3KV 1CH GT DVR DSO8
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Current - Peak Output: 14A
Technology: Magnetic Coupling
Current - Output High, Low: 4A, 4A
Voltage - Isolation: 3000Vrms
Approval Agency: UL
Supplier Device Package: PG-DSO-8
Rise / Fall Time (Typ): 30ns, 30ns (Max)
Common Mode Transient Immunity (Min): 200kV/µs
Pulse Width Distortion (Max): 5ns
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 10V ~ 35V
на замовлення 3973 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 140.51 грн |
| 10+ | 100.05 грн |
| 25+ | 91.09 грн |
| 100+ | 76.26 грн |
| 250+ | 71.86 грн |
| 500+ | 69.20 грн |
| 1000+ | 65.92 грн |
| 1ED3124MU12FXUMA1 |
![]() |
Виробник: Infineon Technologies
Description: DIGITAL ISO 3KV 1CH GT DVR DSO8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Current - Peak Output: 14A
Technology: Magnetic Coupling
Current - Output High, Low: 6A, 6A
Voltage - Isolation: 3000Vrms
Approval Agency: UL
Supplier Device Package: PG-DSO-8
Rise / Fall Time (Typ): 30ns, 30ns (Max)
Common Mode Transient Immunity (Min): 200kV/µs
Pulse Width Distortion (Max): 5ns
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 10V ~ 35V
Description: DIGITAL ISO 3KV 1CH GT DVR DSO8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Current - Peak Output: 14A
Technology: Magnetic Coupling
Current - Output High, Low: 6A, 6A
Voltage - Isolation: 3000Vrms
Approval Agency: UL
Supplier Device Package: PG-DSO-8
Rise / Fall Time (Typ): 30ns, 30ns (Max)
Common Mode Transient Immunity (Min): 200kV/µs
Pulse Width Distortion (Max): 5ns
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 10V ~ 35V
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 79.36 грн |
| 5000+ | 74.81 грн |
| 7500+ | 74.00 грн |
| 1ED3124MU12FXUMA1 |
![]() |
Виробник: Infineon Technologies
Description: DIGITAL ISO 3KV 1CH GT DVR DSO8
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Current - Peak Output: 14A
Technology: Magnetic Coupling
Current - Output High, Low: 6A, 6A
Voltage - Isolation: 3000Vrms
Approval Agency: UL
Supplier Device Package: PG-DSO-8
Rise / Fall Time (Typ): 30ns, 30ns (Max)
Common Mode Transient Immunity (Min): 200kV/µs
Pulse Width Distortion (Max): 5ns
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 10V ~ 35V
Description: DIGITAL ISO 3KV 1CH GT DVR DSO8
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Current - Peak Output: 14A
Technology: Magnetic Coupling
Current - Output High, Low: 6A, 6A
Voltage - Isolation: 3000Vrms
Approval Agency: UL
Supplier Device Package: PG-DSO-8
Rise / Fall Time (Typ): 30ns, 30ns (Max)
Common Mode Transient Immunity (Min): 200kV/µs
Pulse Width Distortion (Max): 5ns
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 10V ~ 35V
на замовлення 9488 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 154.99 грн |
| 10+ | 110.30 грн |
| 25+ | 100.51 грн |
| 100+ | 84.29 грн |
| 250+ | 79.50 грн |
| 500+ | 76.61 грн |
| 1000+ | 73.01 грн |
| DEMOBOARDTLE7182EMTOBO1 |
Виробник: Infineon Technologies
Description: EVAL BOARD FOR TLE7182EM
Packaging: Bulk
Function: Gate Driver
Type: Power Management
Utilized IC / Part: TLE7182EM
Supplied Contents: Board(s)
Contents: Board(s)
Description: EVAL BOARD FOR TLE7182EM
Packaging: Bulk
Function: Gate Driver
Type: Power Management
Utilized IC / Part: TLE7182EM
Supplied Contents: Board(s)
Contents: Board(s)
на замовлення 1 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 52957.52 грн |
| TLE7182EM |
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Виробник: Infineon Technologies
Description: TLE7182 - GATE DRIVER
Packaging: Bulk
Package / Case: 24-LSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 7V ~ 34V
Input Type: Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap): 55 V
Supplier Device Package: PG-SSOP-24-4
Rise / Fall Time (Typ): 250ns, 200ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 4
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 1V, 2V
Part Status: Active
Description: TLE7182 - GATE DRIVER
Packaging: Bulk
Package / Case: 24-LSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 7V ~ 34V
Input Type: Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap): 55 V
Supplier Device Package: PG-SSOP-24-4
Rise / Fall Time (Typ): 250ns, 200ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 4
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 1V, 2V
Part Status: Active
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| IPL65R099C7AUMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 21A 4VSON
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 5.9A, 10V
Power Dissipation (Max): 128W (Tc)
Vgs(th) (Max) @ Id: 4V @ 590µA
Supplier Device Package: PG-VSON-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2140 pF @ 400 V
Description: MOSFET N-CH 650V 21A 4VSON
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 5.9A, 10V
Power Dissipation (Max): 128W (Tc)
Vgs(th) (Max) @ Id: 4V @ 590µA
Supplier Device Package: PG-VSON-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2140 pF @ 400 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 164.72 грн |
| AIKB50N65DH5ATMA1 |
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Виробник: Infineon Technologies
Description: IGBT NPT 650V 50A TO263-3-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Input Type: Standard
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Description: IGBT NPT 650V 50A TO263-3-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Input Type: Standard
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 650 V
на замовлення 3980 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 425.80 грн |
| 10+ | 273.98 грн |
| 100+ | 196.97 грн |
| 500+ | 181.16 грн |
| FS400R07A1E3 |
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Виробник: Infineon Technologies
Description: IGBT MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 400A
NTC Thermistor: Yes
Supplier Device Package: AG-HYBRID1-1
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 500 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 1250 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 26 nF @ 25 V
Description: IGBT MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 400A
NTC Thermistor: Yes
Supplier Device Package: AG-HYBRID1-1
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 500 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 1250 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 26 nF @ 25 V
товару немає в наявності
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од. на суму грн.
| FS400R07A1E3H5BPSA1 |
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Виробник: Infineon Technologies
Description: IGBT MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 400A
NTC Thermistor: Yes
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 750 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 26 nF @ 25 V
Description: IGBT MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 400A
NTC Thermistor: Yes
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 750 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 26 nF @ 25 V
товару немає в наявності
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| FS400R07A1E3BOMA1 |
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Виробник: Infineon Technologies
Description: IGBT MOD 650V 500A AG-HYBRID1-1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 400A
NTC Thermistor: Yes
Supplier Device Package: AG-HYBRID1-1
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 500 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 1250 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 26 nF @ 25 V
Description: IGBT MOD 650V 500A AG-HYBRID1-1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 400A
NTC Thermistor: Yes
Supplier Device Package: AG-HYBRID1-1
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 500 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 1250 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 26 nF @ 25 V
товару немає в наявності
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од. на суму грн.
| BAR8602ELSE6327XTSA1 |
Виробник: Infineon Technologies
Description: RF PIN DIODE > ANTENNA SWITCH
Packaging: Bulk
Part Status: Active
Description: RF PIN DIODE > ANTENNA SWITCH
Packaging: Bulk
Part Status: Active
на замовлення 105000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3463+ | 7.31 грн |
| BAT6404E6433HTMA1 |
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Виробник: Infineon Technologies
Description: DIODE ARR SCHOTT 40V 250MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 250mA
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 30 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ARR SCHOTT 40V 250MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 250mA
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 30 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10000+ | 2.80 грн |
| 20000+ | 2.69 грн |
| BAS4004E6433HTMA1 |
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Виробник: Infineon Technologies
Description: DIODE ARR SCHOTT 40V 120MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 100 ps
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 120mA (DC)
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 1 µA @ 30 V
Description: DIODE ARR SCHOTT 40V 120MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 100 ps
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 120mA (DC)
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 1 µA @ 30 V
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| CY7C1360C-166BZC |
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Виробник: Infineon Technologies
Description: IC SRAM 9MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 9Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 166 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 256K x 36
DigiKey Programmable: Not Verified
Description: IC SRAM 9MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 9Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 166 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 256K x 36
DigiKey Programmable: Not Verified
на замовлення 287 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 330.42 грн |
| IRLR3636TRLPBF |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 50A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 50A, 10V
Power Dissipation (Max): 143W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3779 pF @ 50 V
Description: MOSFET N-CH 60V 50A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 50A, 10V
Power Dissipation (Max): 143W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3779 pF @ 50 V
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| IRFR5410TRLPBF |
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Виробник: Infineon Technologies
Description: MOSFET P-CH 100V 13A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 205mOhm @ 7.8A, 10V
Power Dissipation (Max): 66W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 25 V
Description: MOSFET P-CH 100V 13A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 205mOhm @ 7.8A, 10V
Power Dissipation (Max): 66W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 25 V
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| BCR 149T E6327 |
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Виробник: Infineon Technologies
Description: TRANS PREBIAS NPN 50V 0.07A SC75
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
Supplier Device Package: PG-SC75-3D
Current - Collector (Ic) (Max): 70 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 47 kOhms
Resistors Included: R1 Only
Description: TRANS PREBIAS NPN 50V 0.07A SC75
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
Supplier Device Package: PG-SC75-3D
Current - Collector (Ic) (Max): 70 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 47 kOhms
Resistors Included: R1 Only
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| AUIRF7316QTR |
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Виробник: Infineon Technologies
Description: MOSFET 2P-CH 30V 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 25V
Rds On (Max) @ Id, Vgs: 58mOhm @ 4.9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Not For New Designs
Description: MOSFET 2P-CH 30V 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 25V
Rds On (Max) @ Id, Vgs: 58mOhm @ 4.9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Not For New Designs
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| AUIRF7316QTR |
![]() |
Виробник: Infineon Technologies
Description: MOSFET 2P-CH 30V 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 25V
Rds On (Max) @ Id, Vgs: 58mOhm @ 4.9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Not For New Designs
Description: MOSFET 2P-CH 30V 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 25V
Rds On (Max) @ Id, Vgs: 58mOhm @ 4.9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Not For New Designs
на замовлення 2 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 313.39 грн |
| IPA030N10NF2SXKSA1 |
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Виробник: Infineon Technologies
Description: TRENCH >=100V PG-TO220-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 83A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 50A, 10V
Power Dissipation (Max): 41W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 169µA
Supplier Device Package: PG-TO220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 50 V
Description: TRENCH >=100V PG-TO220-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 83A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 50A, 10V
Power Dissipation (Max): 41W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 169µA
Supplier Device Package: PG-TO220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 50 V
на замовлення 450 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 321.05 грн |
| 50+ | 159.27 грн |
| 100+ | 144.75 грн |



































