Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (149765) > Сторінка 407 з 2497
| Фото | Назва | Виробник | Інформація | Доступність | Ціна | ||||||||||||||||
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|   | BTS115ANKSA1 | Infineon Technologies |  Description: MOSFET N-CH 50V 15.5A TO220AB Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15.5A (Tc) Rds On (Max) @ Id, Vgs: 120mOhm @ 7.8A, 4.5V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TO-220AB Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 50 V Input Capacitance (Ciss) (Max) @ Vds: 735 pF @ 25 V | на замовлення 12000 шт:термін постачання 21-31 дні (днів) | 
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|   | BTS129NKSA1 | Infineon Technologies |  Description: POWER FIELD-EFFECT TRANSISTOR, 2 Packaging: Bulk Part Status: Active | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||||
|   | BB640E6327 | Infineon Technologies |  Description: BB640 - VARACTOR DIODE | на замовлення 50667 шт:термін постачання 21-31 дні (днів) | В кошику од. на суму грн. | ||||||||||||||||
|   | AIGB40N65F5ATMA1 | Infineon Technologies |  Description: DISCRETE SWITCHES Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Input Type: Standard Supplier Device Package: PG-TO263-3-2 IGBT Type: NPT Part Status: Active Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 650 V | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||||
|   | AIGB40N65H5ATMA1 | Infineon Technologies |  Description: IGBT NPT 650V 40A TO263-3-2 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Input Type: Standard Supplier Device Package: PG-TO263-3-2 IGBT Type: NPT Part Status: Active Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 650 V | на замовлення 65 шт:термін постачання 21-31 дні (днів) | 
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|   | IKZA40N65RH5XKSA1 | Infineon Technologies |  Description: IGBT TRENCH FS 650V 74A TO247-4 Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A Supplier Device Package: PG-TO247-4-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 17ns/165ns Switching Energy: 140µJ (on), 120µJ (off) Test Condition: 400V, 20A, 15Ohm, 15V Gate Charge: 95 nC Part Status: Active Current - Collector (Ic) (Max): 74 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 60 A Power - Max: 250 W | на замовлення 230 шт:термін постачання 21-31 дні (днів) | 
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| FP75R17N3E4BPSA1 | Infineon Technologies |  Description: IGBT MOD 1700V 125A 555W Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 150°C Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 75A NTC Thermistor: Yes Supplier Device Package: Module IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 125 A Voltage - Collector Emitter Breakdown (Max): 1700 V Power - Max: 555 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 6.8 nF @ 25 V | на замовлення 232 шт:термін постачання 21-31 дні (днів) | 
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|   | EVAL1ED3491MX12MTOBO1 | Infineon Technologies |  Description: 1ED3491MX12MTOBO1 DEV KIT Packaging: Box Function: Gate Driver Type: Power Management Contents: Board(s) Utilized IC / Part: 1ED3491MU12M, 1ED3491MC12M Supplied Contents: Board(s) Primary Attributes: 1-Channel (Single) Secondary Attributes: On-Board LEDs Embedded: Yes, MCU Part Status: Active | на замовлення 29 шт:термін постачання 21-31 дні (днів) | 
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| IRGH4607DPBF | Infineon Technologies | Description: IGBT 600V 8PQFN | товару немає в наявності | В кошику од. на суму грн. | |||||||||||||||||
|   | IQE006NE2LM5CGATMA1 | Infineon Technologies |  Description: MOSFET N-CH 25V 41A/298A PQFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 298A (Tc) Rds On (Max) @ Id, Vgs: 0.65mOhm @ 20A, 10V Power Dissipation (Max): 2.1W (Ta), 89W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PG-TTFN-9-1 Part Status: Active Vgs (Max): ±16V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 82.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5453 pF @ 12 V | на замовлення 5000 шт:термін постачання 21-31 дні (днів) | 
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|   | IQE006NE2LM5CGATMA1 | Infineon Technologies |  Description: MOSFET N-CH 25V 41A/298A PQFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 298A (Tc) Rds On (Max) @ Id, Vgs: 0.65mOhm @ 20A, 10V Power Dissipation (Max): 2.1W (Ta), 89W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PG-TTFN-9-1 Part Status: Active Vgs (Max): ±16V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 82.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5453 pF @ 12 V | на замовлення 9470 шт:термін постачання 21-31 дні (днів) | 
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|   | IQE006NE2LM5ATMA1 | Infineon Technologies |  Description: MOSFET N-CH 25V 41A/298A 8TSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 298A (Tc) Rds On (Max) @ Id, Vgs: 0.65mOhm @ 20A, 10V Power Dissipation (Max): 2.1W (Ta), 89W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PG-TSON-8-4 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 82.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5453 pF @ 12 V | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||||
|   | IQE006NE2LM5ATMA1 | Infineon Technologies |  Description: MOSFET N-CH 25V 41A/298A 8TSON Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 298A (Tc) Rds On (Max) @ Id, Vgs: 0.65mOhm @ 20A, 10V Power Dissipation (Max): 2.1W (Ta), 89W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PG-TSON-8-4 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 82.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5453 pF @ 12 V | на замовлення 1883 шт:термін постачання 21-31 дні (днів) | 
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|   | TLS4120D0EPV33XUMA1 | Infineon Technologies |  Description: IC REG BUCK 3.3V 2A TSDSO-14-5 Packaging: Tape & Reel (TR) Package / Case: 14-PowerTSSOP (0.154", 3.90mm Width) Output Type: Fixed Mounting Type: Surface Mount Number of Outputs: 1 Function: Step-Down Current - Output: 2A Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Positive Frequency - Switching: 2.8MHz Voltage - Input (Max): 35V Topology: Buck Supplier Device Package: PG-TSDSO-14-5 Synchronous Rectifier: Yes Voltage - Input (Min): 3.7V Voltage - Output (Min/Fixed): 3.3V Part Status: Active Grade: Automotive Qualification: AEC-Q100 | на замовлення 3000 шт:термін постачання 21-31 дні (днів) | 
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|   | TLS4120D0EPV33XUMA1 | Infineon Technologies |  Description: IC REG BUCK 3.3V 2A TSDSO-14-5 Packaging: Cut Tape (CT) Package / Case: 14-PowerTSSOP (0.154", 3.90mm Width) Output Type: Fixed Mounting Type: Surface Mount Number of Outputs: 1 Function: Step-Down Current - Output: 2A Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Positive Frequency - Switching: 2.8MHz Voltage - Input (Max): 35V Topology: Buck Supplier Device Package: PG-TSDSO-14-5 Synchronous Rectifier: Yes Voltage - Input (Min): 3.7V Voltage - Output (Min/Fixed): 3.3V Part Status: Active Grade: Automotive Qualification: AEC-Q100 | на замовлення 5293 шт:термін постачання 21-31 дні (днів) | 
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|   | TLS4125D0EPV33XUMA1 | Infineon Technologies |  Description: OPTIREG SWITCHER | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||||
|   | TLS4125D0EPV33XUMA1 | Infineon Technologies |  Description: OPTIREG SWITCHER | на замовлення 1 шт:термін постачання 21-31 дні (днів) | В кошику од. на суму грн. | ||||||||||||||||
|  | F3L75R07W2E3B11BOMA1 | Infineon Technologies |  Description: IGBT MODULE 650V 95A 250W Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 150°C Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A NTC Thermistor: Yes Supplier Device Package: Module IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 95 A Voltage - Collector Emitter Breakdown (Max): 650 V Power - Max: 250 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 4.6 nF @ 25 V | на замовлення 12 шт:термін постачання 21-31 дні (днів) | 
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|   | FP35R12KT4BPSA1 | Infineon Technologies |  Description: LOW POWER ECONO Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Three Phase Bridge Rectifier Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 35A NTC Thermistor: Yes Supplier Device Package: AG-ECONO2-8 IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 25 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 210 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 2 nF @ 25 V | на замовлення 16 шт:термін постачання 21-31 дні (днів) | 
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| BSF110N06NT3GXUMA1 | Infineon Technologies |  Description: N-CHANNEL  POWER MOSFET Packaging: Bulk Package / Case: DirectFET™ Isometric ST Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 30A, 10V Power Dissipation (Max): 38W (Tc) Vgs(th) (Max) @ Id: 4V @ 33µA Supplier Device Package: MG-WDSON-2 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 30 V | на замовлення 8800 шт:термін постачання 21-31 дні (днів) | 
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|   | BBY57-02V | Infineon Technologies |  Description: VARIABLE CAPACITANCE DIODE Packaging: Bulk Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Diode Type: Single Operating Temperature: -55°C ~ 125°C Capacitance @ Vr, F: 5.5pF @ 4V, 1MHz Capacitance Ratio Condition: C1/C4 Supplier Device Package: PG-SC79-2 Part Status: Active Voltage - Peak Reverse (Max): 10 V Capacitance Ratio: 4.5 | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||||
| DD1200S17H4_B2 | Infineon Technologies |  Description: DD1200S17 - RECTIFIER DIODE MODU | на замовлення 82 шт:термін постачання 21-31 дні (днів) | В кошику од. на суму грн. | |||||||||||||||||
| DD1200S12H4NPSA1 | Infineon Technologies |  Description: RECTIFIER DIODE MODULE | товару немає в наявності | В кошику од. на суму грн. | |||||||||||||||||
| CG7815AAT | Infineon Technologies | Description: MEMORY SRAM ASYNC Packaging: Tape & Reel (TR) DigiKey Programmable: Not Verified | товару немає в наявності | В кошику од. на суму грн. | |||||||||||||||||
| CG7815AA | Infineon Technologies | Description: MEMORY SRAM ASYNC Packaging: Tray DigiKey Programmable: Not Verified | товару немає в наявності | В кошику од. на суму грн. | |||||||||||||||||
|   | EVAL1ED44173N01BTOBO1 | Infineon Technologies |  Description: EVAL BOARD FOR 1ED44173N01B Packaging: Bulk Function: MOSFET Type: Interface Utilized IC / Part: 1ED44173N01B Supplied Contents: Board(s) Part Status: Active Contents: Board(s) | на замовлення 2 шт:термін постачання 21-31 дні (днів) | 
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|   | BGS12WN6E6327XTSA1 | Infineon Technologies |  Description: IC RF SWITCH SPDT 9GHZ TSNP6-10 Packaging: Tape & Reel (TR) Features: DC Blocked Package / Case: 6-XFDFN Impedance: 50Ohm Mounting Type: Surface Mount Circuit: SPDT RF Type: WLAN Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 3.6V Insertion Loss: 1.12dB Frequency Range: 50MHz ~ 9GHz Test Frequency: 9GHz Isolation: 22dB Supplier Device Package: PG-TSNP-6-10 IIP3: 70dBm Part Status: Active | на замовлення 163800 шт:термін постачання 21-31 дні (днів) | 
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|   | BGS12WN6E6327XTSA1 | Infineon Technologies |  Description: IC RF SWITCH SPDT 9GHZ TSNP6-10 Packaging: Cut Tape (CT) Features: DC Blocked Package / Case: 6-XFDFN Impedance: 50Ohm Mounting Type: Surface Mount Circuit: SPDT RF Type: WLAN Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 3.6V Insertion Loss: 1.12dB Frequency Range: 50MHz ~ 9GHz Test Frequency: 9GHz Isolation: 22dB Supplier Device Package: PG-TSNP-6-10 IIP3: 70dBm Part Status: Active | на замовлення 166049 шт:термін постачання 21-31 дні (днів) | 
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|   | CYW20733A2KML1GT | Infineon Technologies |  Description: IC RF TXRX+MCU BLUETOOTH 56VFQFN Packaging: Tape & Reel (TR) Package / Case: 56-VFQFN Exposed Pad Sensitivity: -91dBm Mounting Type: Surface Mount Frequency: 2.4GHz Type: TxRx + MCU Operating Temperature: 0°C ~ 70°C Voltage - Supply: 3V Power - Output: 10dBm Protocol: Bluetooth v3.0 Current - Receiving: 26.4mA Current - Transmitting: 47mA Supplier Device Package: 56-QFN (7x7) RF Family/Standard: Bluetooth Serial Interfaces: I2C, I2S, SPI, UART Part Status: Obsolete DigiKey Programmable: Not Verified | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||||
|   | TLE8457LINLDOBOARDTOBO1 | Infineon Technologies |  Description: TLE8457 LIN LDO BOARD | на замовлення 1 шт:термін постачання 21-31 дні (днів) | 
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|   | TT61N16KOFHPSA1 | Infineon Technologies |  Description: SCR MODULE 1.6KV 120A MODULE Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 125°C Structure: Series Connection - All SCRs Current - Hold (Ih) (Max): 200 mA Current - Gate Trigger (Igt) (Max): 120 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 1550A @ 50Hz Number of SCRs, Diodes: 2 SCRs Current - On State (It (AV)) (Max): 76 A Voltage - Gate Trigger (Vgt) (Max): 1.4 V Current - On State (It (RMS)) (Max): 120 A Voltage - Off State: 1.6 kV | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||||
|   | CY8C4014LQI-SLT2 | Infineon Technologies |  Description: IC MCU 32BIT 16KB FLASH 24SQFN Packaging: Bulk Package / Case: 24-UFQFN Exposed Pad Mounting Type: Surface Mount Speed: 16MHz Program Memory Size: 16KB (16K x 8) RAM Size: 2K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0 Data Converters: D/A 1x7b, 1x8b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Connectivity: I²C Peripherals: Brown-out Detect/Reset, POR, PWM, WDT Supplier Device Package: 24-QFN (4x4) Number of I/O: 20 DigiKey Programmable: Not Verified | на замовлення 726 шт:термін постачання 21-31 дні (днів) | 
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| XMC4800-E196K2048AA | Infineon Technologies |  Description: 32-BIT MCU XMC4000 ARM CORTEX-M4 Packaging: Bulk Package / Case: 196-LFBGA Mounting Type: Surface Mount Speed: 144MHz Program Memory Size: 2MB (2M x 8) RAM Size: 352K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M4 Data Converters: A/D 32x12b; D/A 2x12b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 3.13V ~ 3.63V Connectivity: CANbus, EBI/EMI, Ethernet, I²C, LINbus, MMC/SD, SPI, UART/USART, USB OTG, USIC Peripherals: DMA, I²S, LED, POR, Touch-Sense, WDT Supplier Device Package: PG-LFBGA-196-2 Part Status: Active Number of I/O: 155 DigiKey Programmable: Not Verified | товару немає в наявності | В кошику од. на суму грн. | |||||||||||||||||
|   | 1ED3890MU12MXUMA1 | Infineon Technologies |  Description: DIGITAL ISO 1CH GT DVR DSO16-28 Packaging: Tape & Reel (TR) Package / Case: 16-BSSOP (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Current - Peak Output: 9A Technology: Magnetic Coupling Approval Agency: UL, VDE Supplier Device Package: PG-DSO-16-28 Rise / Fall Time (Typ): 15ns, 15ns Part Status: Active Number of Channels: 1 Voltage - Output Supply: 13V ~ 25V | на замовлення 1000 шт:термін постачання 21-31 дні (днів) | 
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|   | 1ED3830MU12MXUMA1 | Infineon Technologies |  Description: DIGITAL ISO 1CH GT DVR DSO16-28 Packaging: Tape & Reel (TR) Package / Case: 16-BSSOP (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Current - Peak Output: 3A Technology: Magnetic Coupling Approval Agency: UL, VDE Supplier Device Package: PG-DSO-16-28 Rise / Fall Time (Typ): 15ns, 15ns Part Status: Active Number of Channels: 1 Voltage - Output Supply: 13V ~ 25V | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||||
| IPP60R120P7 | Infineon Technologies |  Description: 600V, 0.12OHM, N-CHANNEL MOSFET, Packaging: Bulk Part Status: Active | товару немає в наявності | В кошику од. на суму грн. | |||||||||||||||||
|   | SP001385054 | Infineon Technologies |  Description: IPP60R120C7XKSA1 - 600V COOLMOS Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Rds On (Max) @ Id, Vgs: 120mOhm @ 7.8A, 10V Power Dissipation (Max): 92W (Tc) Vgs(th) (Max) @ Id: 4V @ 390µA Supplier Device Package: PG-TO220-3-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 400 V | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||||
|   | CY7C1370KV25-167AXC | Infineon Technologies |  Description: IC SRAM 18MBIT PAR 100TQFP Packaging: Tray Package / Case: 100-LQFP Mounting Type: Surface Mount Memory Size: 18Mbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 2.375V ~ 2.625V Technology: SRAM - Synchronous, SDR Clock Frequency: 167 MHz Memory Format: SRAM Supplier Device Package: 100-TQFP (14x20) Memory Interface: Parallel Access Time: 3.4 ns Memory Organization: 512K x 36 DigiKey Programmable: Not Verified | на замовлення 235 шт:термін постачання 21-31 дні (днів) | 
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|   | FXE167F96F66LACXP | Infineon Technologies |  Description: IC MCU 16BIT 768KB FLASH 144LQFP | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||||
|   | SAF-XE167K-48F66LAC | Infineon Technologies |  Description: 16-BIT FLASH MICROCONTROLLER, 80 Packaging: Bulk DigiKey Programmable: Not Verified | на замовлення 360 шт:термін постачання 21-31 дні (днів) | 
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|   | SAF-XE167K-72F66LAC | Infineon Technologies |  Description: 16-BIT FLASH MICROCONTROLLER, 80 Packaging: Bulk DigiKey Programmable: Not Verified | на замовлення 188 шт:термін постачання 21-31 дні (днів) | 
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|   | SAF-XE167H-96F66LAC | Infineon Technologies |  Description: XE167 - 16-BIT FLASH RISC MICROC Packaging: Bulk Package / Case: 144-LQFP Exposed Pad Mounting Type: Surface Mount Speed: 66MHz Program Memory Size: 768KB (768K x 8) RAM Size: 82K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: C166SV2 Data Converters: A/D 8, 16x8/10b SAR Core Size: 16-Bit Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V Connectivity: EBI/EMI, I²C, LINbus, QSPI, SPI, SSC, UART/USART, USI Peripherals: I²S, POR, PWM, WDT Supplier Device Package: PG-LQFP-144-4 Part Status: Active Number of I/O: 118 DigiKey Programmable: Not Verified | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||||
|   | SAF-XE167F-96F80LACFXUMA1 | Infineon Technologies |  Description: 16-BIT FLASH RISC MCU | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||||
|   | SAFXE167F96F66LAC | Infineon Technologies |  Description: IC MCU 16BIT 768KB FLASH 144LQFP | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||||
|   | XE167F96F66LACFXUMA1 | Infineon Technologies |  Description: IC MCU 16BIT 768KB FLASH 144LQFP Packaging: Tape & Reel (TR) Package / Case: 144-LQFP Exposed Pad Mounting Type: Surface Mount Speed: 66MHz Program Memory Size: 768KB (768K x 8) RAM Size: 82K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: C166SV2 Data Converters: A/D 24x10b Core Size: 16-Bit Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI Peripherals: I2S, POR, PWM, WDT Supplier Device Package: PG-LQFP-144-4 Number of I/O: 118 DigiKey Programmable: Not Verified | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||||
|   | SAF-XE167GM-48F80L AA | Infineon Technologies |  Description: IC MCU 16BIT 384KB FLASH 144LQFP Packaging: Tape & Reel (TR) Package / Case: 144-LQFP Exposed Pad Mounting Type: Surface Mount Speed: 80MHz Program Memory Size: 384KB (384K x 8) RAM Size: 34K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: C166SV2 Data Converters: A/D 16x10b Core Size: 16-Bit Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI Peripherals: I2S, POR, PWM, WDT Supplier Device Package: PG-LQFP-144-4 Number of I/O: 119 DigiKey Programmable: Not Verified | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||||
|   | SAF-XE167GM-72F80L AA | Infineon Technologies |  Description: IC MCU 16BIT 576KB FLASH 144LQFP | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||||
|   | SAF-XE167HM-48F80L AA | Infineon Technologies |  Description: IC MCU 16BIT 384KB FLASH 144LQFP | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||||
|   | EVAL1ED44176N01FTOBO1 | Infineon Technologies |  Description: EVAL BOARD FOR 1ED44176N01F Packaging: Bulk Function: Gate Driver Type: Power Management Utilized IC / Part: 1ED44176N01F Supplied Contents: Board(s) Part Status: Active Contents: Board(s) | на замовлення 3 шт:термін постачання 21-31 дні (днів) | 
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|   | ETD480N22P60HPSA1 | Infineon Technologies |  Description: THYR / DIODE MODULE DK Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 135°C (TC) Structure: Series Connection - SCR/Diode Current - Hold (Ih) (Max): 300 mA Current - Gate Trigger (Igt) (Max): 250 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 14700A @ 50Hz Number of SCRs, Diodes: 1 SCR, 1 Diode Current - On State (It (AV)) (Max): 480 A Voltage - Gate Trigger (Vgt) (Max): 2.2 V Current - On State (It (RMS)) (Max): 700 A Voltage - Off State: 2.2 kV | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||||
|   | TC267D40F200NBCKXUMA1 | Infineon Technologies |  Description: IC MCU 32BIT 2.5MB FLSH 292LFBGA Packaging: Tape & Reel (TR) Package / Case: 292-LFBGA Mounting Type: Surface Mount Speed: 200MHz Program Memory Size: 2.5MB (2.5M x 8) RAM Size: 240K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: External Program Memory Type: FLASH EEPROM Size: 96K x 8 Core Processor: TriCore™ Data Converters: A/D 48x12b SAR, 3 x Sigma-Delta Core Size: 32-Bit Dual-Core Voltage - Supply (Vcc/Vdd): 3.3V, 5V Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT Peripherals: DMA, WDT Supplier Device Package: PG-LFBGA-292-6 Number of I/O: 88 DigiKey Programmable: Not Verified | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||||
|   | TC267D40F200NBCKXUMA1 | Infineon Technologies |  Description: IC MCU 32BIT 2.5MB FLSH 292LFBGA Packaging: Cut Tape (CT) Package / Case: 292-LFBGA Mounting Type: Surface Mount Speed: 200MHz Program Memory Size: 2.5MB (2.5M x 8) RAM Size: 240K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: External Program Memory Type: FLASH EEPROM Size: 96K x 8 Core Processor: TriCore™ Data Converters: A/D 48x12b SAR, 3 x Sigma-Delta Core Size: 32-Bit Dual-Core Voltage - Supply (Vcc/Vdd): 3.3V, 5V Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT Peripherals: DMA, WDT Supplier Device Package: PG-LFBGA-292-6 Number of I/O: 88 DigiKey Programmable: Not Verified | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||||
|   | IAUC100N04S6L025ATMA1 | Infineon Technologies |  Description: IAUC100N04S6L025ATMA1 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 2.56mOhm @ 50A, 10V Power Dissipation (Max): 62W (Tc) Vgs(th) (Max) @ Id: 2V @ 24µA Supplier Device Package: PG-TDSON-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2019 pF @ 25 V Qualification: AEC-Q101 | на замовлення 35000 шт:термін постачання 21-31 дні (днів) | 
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|   | IAUC100N04S6L025ATMA1 | Infineon Technologies |  Description: IAUC100N04S6L025ATMA1 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 2.56mOhm @ 50A, 10V Power Dissipation (Max): 62W (Tc) Vgs(th) (Max) @ Id: 2V @ 24µA Supplier Device Package: PG-TDSON-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2019 pF @ 25 V Qualification: AEC-Q101 | на замовлення 36287 шт:термін постачання 21-31 дні (днів) | 
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| TDB6HK165N16LOFHOSA1 | Infineon Technologies | Description: SCR MODULE VDRM 1600V 70A Packaging: Bulk Part Status: Discontinued at Digi-Key | на замовлення 32 шт:термін постачання 21-31 дні (днів) | 
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|   | TDB6HK124N16RRBOSA1 | Infineon Technologies |  Description: SCR MODULE 1.6KV 70A MODULE | на замовлення 10 шт:термін постачання 21-31 дні (днів) | В кошику од. на суму грн. | ||||||||||||||||
|   | TDB6HK240N16PBOSA1 | Infineon Technologies |  Description: THYRISTOR MODULE VDRM 1600V 70A | на замовлення 6 шт:термін постачання 21-31 дні (днів) | 
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| TDB6HK180N16RRB21BOSA1 | Infineon Technologies |  Description: 1600VBRIDGE MODULE Packaging: Bulk Part Status: Active | на замовлення 10 шт:термін постачання 21-31 дні (днів) | 
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| TDB6HK165N16LOFHOSA1 | Infineon Technologies | Description: SCR MODULE VDRM 1600V 70A Packaging: Tray Part Status: Discontinued at Digi-Key | товару немає в наявності | В кошику од. на суму грн. | |||||||||||||||||
| TDB6HK360N16P | Infineon Technologies |  Description: TDBXHK360 - BRIDGE RECTIFIER & A | товару немає в наявності | В кошику од. на суму грн. | 
| BTS115ANKSA1 |  | 
Виробник: Infineon Technologies
Description: MOSFET N-CH 50V 15.5A TO220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.5A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 7.8A, 4.5V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 735 pF @ 25 V
    Description: MOSFET N-CH 50V 15.5A TO220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.5A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 7.8A, 4.5V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 735 pF @ 25 V
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 64+ | 345.43 грн | 
| BTS129NKSA1 |  | 
Виробник: Infineon Technologies
Description: POWER FIELD-EFFECT TRANSISTOR, 2
Packaging: Bulk
Part Status: Active
    Description: POWER FIELD-EFFECT TRANSISTOR, 2
Packaging: Bulk
Part Status: Active
товару немає в наявності
    В кошику
     од. на суму     грн.
| BB640E6327 |  | 
Виробник: Infineon Technologies
Description: BB640 - VARACTOR DIODE
    Description: BB640 - VARACTOR DIODE
на замовлення 50667 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| AIGB40N65F5ATMA1 |  | 
Виробник: Infineon Technologies
Description: DISCRETE SWITCHES
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Input Type: Standard
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
    Description: DISCRETE SWITCHES
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Input Type: Standard
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
товару немає в наявності
    В кошику
     од. на суму     грн.
| AIGB40N65H5ATMA1 |  | 
Виробник: Infineon Technologies
Description: IGBT NPT 650V 40A TO263-3-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Input Type: Standard
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
    Description: IGBT NPT 650V 40A TO263-3-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Input Type: Standard
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
на замовлення 65 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 1+ | 408.09 грн | 
| 10+ | 261.16 грн | 
| IKZA40N65RH5XKSA1 |  | 
Виробник: Infineon Technologies
Description: IGBT TRENCH FS 650V 74A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: PG-TO247-4-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 17ns/165ns
Switching Energy: 140µJ (on), 120µJ (off)
Test Condition: 400V, 20A, 15Ohm, 15V
Gate Charge: 95 nC
Part Status: Active
Current - Collector (Ic) (Max): 74 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 250 W
    Description: IGBT TRENCH FS 650V 74A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: PG-TO247-4-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 17ns/165ns
Switching Energy: 140µJ (on), 120µJ (off)
Test Condition: 400V, 20A, 15Ohm, 15V
Gate Charge: 95 nC
Part Status: Active
Current - Collector (Ic) (Max): 74 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 250 W
на замовлення 230 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 1+ | 497.31 грн | 
| 30+ | 275.06 грн | 
| 120+ | 230.24 грн | 
| FP75R17N3E4BPSA1 |  | 
Виробник: Infineon Technologies
Description: IGBT MOD 1700V 125A 555W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 125 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 555 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 6.8 nF @ 25 V
    Description: IGBT MOD 1700V 125A 555W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 125 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 555 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 6.8 nF @ 25 V
на замовлення 232 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 2+ | 11245.98 грн | 
| EVAL1ED3491MX12MTOBO1 |  | 
Виробник: Infineon Technologies
Description: 1ED3491MX12MTOBO1 DEV KIT
Packaging: Box
Function: Gate Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: 1ED3491MU12M, 1ED3491MC12M
Supplied Contents: Board(s)
Primary Attributes: 1-Channel (Single)
Secondary Attributes: On-Board LEDs
Embedded: Yes, MCU
Part Status: Active
    Description: 1ED3491MX12MTOBO1 DEV KIT
Packaging: Box
Function: Gate Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: 1ED3491MU12M, 1ED3491MC12M
Supplied Contents: Board(s)
Primary Attributes: 1-Channel (Single)
Secondary Attributes: On-Board LEDs
Embedded: Yes, MCU
Part Status: Active
на замовлення 29 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 1+ | 5926.37 грн | 
| IRGH4607DPBF | 
Виробник: Infineon Technologies
Description: IGBT 600V 8PQFN
    Description: IGBT 600V 8PQFN
товару немає в наявності
    В кошику
     од. на суму     грн.
| IQE006NE2LM5CGATMA1 |  | 
Виробник: Infineon Technologies
Description: MOSFET N-CH 25V 41A/298A PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 298A (Tc)
Rds On (Max) @ Id, Vgs: 0.65mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TTFN-9-1
Part Status: Active
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 82.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5453 pF @ 12 V
    Description: MOSFET N-CH 25V 41A/298A PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 298A (Tc)
Rds On (Max) @ Id, Vgs: 0.65mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TTFN-9-1
Part Status: Active
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 82.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5453 pF @ 12 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 5000+ | 73.24 грн | 
| IQE006NE2LM5CGATMA1 |  | 
Виробник: Infineon Technologies
Description: MOSFET N-CH 25V 41A/298A PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 298A (Tc)
Rds On (Max) @ Id, Vgs: 0.65mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TTFN-9-1
Part Status: Active
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 82.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5453 pF @ 12 V
    Description: MOSFET N-CH 25V 41A/298A PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 298A (Tc)
Rds On (Max) @ Id, Vgs: 0.65mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TTFN-9-1
Part Status: Active
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 82.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5453 pF @ 12 V
на замовлення 9470 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 2+ | 212.31 грн | 
| 10+ | 139.61 грн | 
| 100+ | 100.00 грн | 
| 500+ | 73.84 грн | 
| 1000+ | 64.45 грн | 
| IQE006NE2LM5ATMA1 |  | 
Виробник: Infineon Technologies
Description: MOSFET N-CH 25V 41A/298A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 298A (Tc)
Rds On (Max) @ Id, Vgs: 0.65mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSON-8-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 82.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5453 pF @ 12 V
    Description: MOSFET N-CH 25V 41A/298A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 298A (Tc)
Rds On (Max) @ Id, Vgs: 0.65mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSON-8-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 82.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5453 pF @ 12 V
товару немає в наявності
    В кошику
     од. на суму     грн.
| IQE006NE2LM5ATMA1 |  | 
Виробник: Infineon Technologies
Description: MOSFET N-CH 25V 41A/298A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 298A (Tc)
Rds On (Max) @ Id, Vgs: 0.65mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSON-8-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 82.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5453 pF @ 12 V
    Description: MOSFET N-CH 25V 41A/298A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 298A (Tc)
Rds On (Max) @ Id, Vgs: 0.65mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSON-8-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 82.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5453 pF @ 12 V
на замовлення 1883 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 2+ | 198.26 грн | 
| 10+ | 123.06 грн | 
| 100+ | 84.59 грн | 
| 500+ | 64.52 грн | 
| TLS4120D0EPV33XUMA1 |  | 
Виробник: Infineon Technologies
Description: IC REG BUCK 3.3V 2A TSDSO-14-5
Packaging: Tape & Reel (TR)
Package / Case: 14-PowerTSSOP (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 2A
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: 2.8MHz
Voltage - Input (Max): 35V
Topology: Buck
Supplier Device Package: PG-TSDSO-14-5
Synchronous Rectifier: Yes
Voltage - Input (Min): 3.7V
Voltage - Output (Min/Fixed): 3.3V
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
    Description: IC REG BUCK 3.3V 2A TSDSO-14-5
Packaging: Tape & Reel (TR)
Package / Case: 14-PowerTSSOP (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 2A
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: 2.8MHz
Voltage - Input (Max): 35V
Topology: Buck
Supplier Device Package: PG-TSDSO-14-5
Synchronous Rectifier: Yes
Voltage - Input (Min): 3.7V
Voltage - Output (Min/Fixed): 3.3V
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 3000+ | 174.62 грн | 
| TLS4120D0EPV33XUMA1 |  | 
Виробник: Infineon Technologies
Description: IC REG BUCK 3.3V 2A TSDSO-14-5
Packaging: Cut Tape (CT)
Package / Case: 14-PowerTSSOP (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 2A
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: 2.8MHz
Voltage - Input (Max): 35V
Topology: Buck
Supplier Device Package: PG-TSDSO-14-5
Synchronous Rectifier: Yes
Voltage - Input (Min): 3.7V
Voltage - Output (Min/Fixed): 3.3V
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
    Description: IC REG BUCK 3.3V 2A TSDSO-14-5
Packaging: Cut Tape (CT)
Package / Case: 14-PowerTSSOP (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 2A
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: 2.8MHz
Voltage - Input (Max): 35V
Topology: Buck
Supplier Device Package: PG-TSDSO-14-5
Synchronous Rectifier: Yes
Voltage - Input (Min): 3.7V
Voltage - Output (Min/Fixed): 3.3V
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 5293 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 2+ | 322.18 грн | 
| 10+ | 234.59 грн | 
| 25+ | 215.74 грн | 
| 100+ | 182.98 грн | 
| 250+ | 173.69 грн | 
| 500+ | 168.10 грн | 
| 1000+ | 160.81 грн | 
| TLS4125D0EPV33XUMA1 |  | 
Виробник: Infineon Technologies
Description: OPTIREG SWITCHER
    Description: OPTIREG SWITCHER
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| TLS4125D0EPV33XUMA1 |  | 
Виробник: Infineon Technologies
Description: OPTIREG SWITCHER
    Description: OPTIREG SWITCHER
на замовлення 1 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| F3L75R07W2E3B11BOMA1 |  | 
Виробник: Infineon Technologies
Description: IGBT MODULE 650V 95A 250W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 95 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 250 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 4.6 nF @ 25 V
    Description: IGBT MODULE 650V 95A 250W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 95 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 250 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 4.6 nF @ 25 V
на замовлення 12 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 1+ | 3634.80 грн | 
| FP35R12KT4BPSA1 |  | 
Виробник: Infineon Technologies
Description: LOW POWER ECONO
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 35A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2-8
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 210 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 2 nF @ 25 V
    Description: LOW POWER ECONO
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 35A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2-8
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 210 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 2 nF @ 25 V
на замовлення 16 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 1+ | 5861.11 грн | 
| 15+ | 4388.37 грн | 
| BSF110N06NT3GXUMA1 |  | 
Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: DirectFET™ Isometric ST
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 30A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 4V @ 33µA
Supplier Device Package: MG-WDSON-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 30 V
    Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: DirectFET™ Isometric ST
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 30A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 4V @ 33µA
Supplier Device Package: MG-WDSON-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 30 V
на замовлення 8800 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 650+ | 35.05 грн | 
| BBY57-02V |  | 
Виробник: Infineon Technologies
Description: VARIABLE CAPACITANCE DIODE
Packaging: Bulk
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 125°C
Capacitance @ Vr, F: 5.5pF @ 4V, 1MHz
Capacitance Ratio Condition: C1/C4
Supplier Device Package: PG-SC79-2
Part Status: Active
Voltage - Peak Reverse (Max): 10 V
Capacitance Ratio: 4.5
    Description: VARIABLE CAPACITANCE DIODE
Packaging: Bulk
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 125°C
Capacitance @ Vr, F: 5.5pF @ 4V, 1MHz
Capacitance Ratio Condition: C1/C4
Supplier Device Package: PG-SC79-2
Part Status: Active
Voltage - Peak Reverse (Max): 10 V
Capacitance Ratio: 4.5
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| DD1200S17H4_B2 |  | 
Виробник: Infineon Technologies
Description: DD1200S17 - RECTIFIER DIODE MODU
    Description: DD1200S17 - RECTIFIER DIODE MODU
на замовлення 82 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| DD1200S12H4NPSA1 |  | 
Виробник: Infineon Technologies
Description: RECTIFIER DIODE MODULE
    Description: RECTIFIER DIODE MODULE
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| CG7815AAT | 
Виробник: Infineon Technologies
Description: MEMORY SRAM ASYNC
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
    Description: MEMORY SRAM ASYNC
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
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| CG7815AA | 
Виробник: Infineon Technologies
Description: MEMORY SRAM ASYNC
Packaging: Tray
DigiKey Programmable: Not Verified
    Description: MEMORY SRAM ASYNC
Packaging: Tray
DigiKey Programmable: Not Verified
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| EVAL1ED44173N01BTOBO1 |  | 
Виробник: Infineon Technologies
Description: EVAL BOARD FOR 1ED44173N01B
Packaging: Bulk
Function: MOSFET
Type: Interface
Utilized IC / Part: 1ED44173N01B
Supplied Contents: Board(s)
Part Status: Active
Contents: Board(s)
    Description: EVAL BOARD FOR 1ED44173N01B
Packaging: Bulk
Function: MOSFET
Type: Interface
Utilized IC / Part: 1ED44173N01B
Supplied Contents: Board(s)
Part Status: Active
Contents: Board(s)
на замовлення 2 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 1+ | 2027.23 грн | 
| BGS12WN6E6327XTSA1 |  | 
Виробник: Infineon Technologies
Description: IC RF SWITCH SPDT 9GHZ TSNP6-10
Packaging: Tape & Reel (TR)
Features: DC Blocked
Package / Case: 6-XFDFN
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: SPDT
RF Type: WLAN
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Insertion Loss: 1.12dB
Frequency Range: 50MHz ~ 9GHz
Test Frequency: 9GHz
Isolation: 22dB
Supplier Device Package: PG-TSNP-6-10
IIP3: 70dBm
Part Status: Active
    Description: IC RF SWITCH SPDT 9GHZ TSNP6-10
Packaging: Tape & Reel (TR)
Features: DC Blocked
Package / Case: 6-XFDFN
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: SPDT
RF Type: WLAN
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Insertion Loss: 1.12dB
Frequency Range: 50MHz ~ 9GHz
Test Frequency: 9GHz
Isolation: 22dB
Supplier Device Package: PG-TSNP-6-10
IIP3: 70dBm
Part Status: Active
на замовлення 163800 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 12000+ | 10.61 грн | 
| 24000+ | 9.82 грн | 
| 36000+ | 9.60 грн | 
| 60000+ | 8.75 грн | 
| BGS12WN6E6327XTSA1 |  | 
Виробник: Infineon Technologies
Description: IC RF SWITCH SPDT 9GHZ TSNP6-10
Packaging: Cut Tape (CT)
Features: DC Blocked
Package / Case: 6-XFDFN
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: SPDT
RF Type: WLAN
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Insertion Loss: 1.12dB
Frequency Range: 50MHz ~ 9GHz
Test Frequency: 9GHz
Isolation: 22dB
Supplier Device Package: PG-TSNP-6-10
IIP3: 70dBm
Part Status: Active
    Description: IC RF SWITCH SPDT 9GHZ TSNP6-10
Packaging: Cut Tape (CT)
Features: DC Blocked
Package / Case: 6-XFDFN
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: SPDT
RF Type: WLAN
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Insertion Loss: 1.12dB
Frequency Range: 50MHz ~ 9GHz
Test Frequency: 9GHz
Isolation: 22dB
Supplier Device Package: PG-TSNP-6-10
IIP3: 70dBm
Part Status: Active
на замовлення 166049 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 18+ | 19.00 грн | 
| 20+ | 15.99 грн | 
| 25+ | 15.02 грн | 
| 100+ | 12.89 грн | 
| 250+ | 12.15 грн | 
| 500+ | 11.63 грн | 
| 1000+ | 10.96 грн | 
| 5000+ | 9.94 грн | 
| CYW20733A2KML1GT |  | 
Виробник: Infineon Technologies
Description: IC RF TXRX+MCU BLUETOOTH 56VFQFN
Packaging: Tape & Reel (TR)
Package / Case: 56-VFQFN Exposed Pad
Sensitivity: -91dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Type: TxRx + MCU
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V
Power - Output: 10dBm
Protocol: Bluetooth v3.0
Current - Receiving: 26.4mA
Current - Transmitting: 47mA
Supplier Device Package: 56-QFN (7x7)
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, I2S, SPI, UART
Part Status: Obsolete
DigiKey Programmable: Not Verified
    Description: IC RF TXRX+MCU BLUETOOTH 56VFQFN
Packaging: Tape & Reel (TR)
Package / Case: 56-VFQFN Exposed Pad
Sensitivity: -91dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Type: TxRx + MCU
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V
Power - Output: 10dBm
Protocol: Bluetooth v3.0
Current - Receiving: 26.4mA
Current - Transmitting: 47mA
Supplier Device Package: 56-QFN (7x7)
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, I2S, SPI, UART
Part Status: Obsolete
DigiKey Programmable: Not Verified
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| TLE8457LINLDOBOARDTOBO1 |  | 
Виробник: Infineon Technologies
Description: TLE8457 LIN LDO BOARD
    Description: TLE8457 LIN LDO BOARD
на замовлення 1 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 1+ | 9033.30 грн | 
| TT61N16KOFHPSA1 |  | 
Виробник: Infineon Technologies
Description: SCR MODULE 1.6KV 120A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 120 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1550A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 76 A
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Current - On State (It (RMS)) (Max): 120 A
Voltage - Off State: 1.6 kV
    Description: SCR MODULE 1.6KV 120A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 120 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1550A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 76 A
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Current - On State (It (RMS)) (Max): 120 A
Voltage - Off State: 1.6 kV
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| CY8C4014LQI-SLT2 |  | 
Виробник: Infineon Technologies
Description: IC MCU 32BIT 16KB FLASH 24SQFN
Packaging: Bulk
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: D/A 1x7b, 1x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I²C
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 24-QFN (4x4)
Number of I/O: 20
DigiKey Programmable: Not Verified
    Description: IC MCU 32BIT 16KB FLASH 24SQFN
Packaging: Bulk
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: D/A 1x7b, 1x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I²C
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 24-QFN (4x4)
Number of I/O: 20
DigiKey Programmable: Not Verified
на замовлення 726 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 125+ | 199.09 грн | 
| XMC4800-E196K2048AA |  | 
Виробник: Infineon Technologies
Description: 32-BIT MCU XMC4000 ARM CORTEX-M4
Packaging: Bulk
Package / Case: 196-LFBGA
Mounting Type: Surface Mount
Speed: 144MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 352K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 32x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3.13V ~ 3.63V
Connectivity: CANbus, EBI/EMI, Ethernet, I²C, LINbus, MMC/SD, SPI, UART/USART, USB OTG, USIC
Peripherals: DMA, I²S, LED, POR, Touch-Sense, WDT
Supplier Device Package: PG-LFBGA-196-2
Part Status: Active
Number of I/O: 155
DigiKey Programmable: Not Verified
    Description: 32-BIT MCU XMC4000 ARM CORTEX-M4
Packaging: Bulk
Package / Case: 196-LFBGA
Mounting Type: Surface Mount
Speed: 144MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 352K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 32x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3.13V ~ 3.63V
Connectivity: CANbus, EBI/EMI, Ethernet, I²C, LINbus, MMC/SD, SPI, UART/USART, USB OTG, USIC
Peripherals: DMA, I²S, LED, POR, Touch-Sense, WDT
Supplier Device Package: PG-LFBGA-196-2
Part Status: Active
Number of I/O: 155
DigiKey Programmable: Not Verified
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| 1ED3890MU12MXUMA1 |  | 
Виробник: Infineon Technologies
Description: DIGITAL ISO 1CH GT DVR DSO16-28
Packaging: Tape & Reel (TR)
Package / Case: 16-BSSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 9A
Technology: Magnetic Coupling
Approval Agency: UL, VDE
Supplier Device Package: PG-DSO-16-28
Rise / Fall Time (Typ): 15ns, 15ns
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 13V ~ 25V
    Description: DIGITAL ISO 1CH GT DVR DSO16-28
Packaging: Tape & Reel (TR)
Package / Case: 16-BSSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 9A
Technology: Magnetic Coupling
Approval Agency: UL, VDE
Supplier Device Package: PG-DSO-16-28
Rise / Fall Time (Typ): 15ns, 15ns
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 13V ~ 25V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 1000+ | 297.83 грн | 
| 1ED3830MU12MXUMA1 |  | 
Виробник: Infineon Technologies
Description: DIGITAL ISO 1CH GT DVR DSO16-28
Packaging: Tape & Reel (TR)
Package / Case: 16-BSSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 3A
Technology: Magnetic Coupling
Approval Agency: UL, VDE
Supplier Device Package: PG-DSO-16-28
Rise / Fall Time (Typ): 15ns, 15ns
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 13V ~ 25V
    Description: DIGITAL ISO 1CH GT DVR DSO16-28
Packaging: Tape & Reel (TR)
Package / Case: 16-BSSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 3A
Technology: Magnetic Coupling
Approval Agency: UL, VDE
Supplier Device Package: PG-DSO-16-28
Rise / Fall Time (Typ): 15ns, 15ns
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 13V ~ 25V
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| IPP60R120P7 |  | 
Виробник: Infineon Technologies
Description: 600V, 0.12OHM, N-CHANNEL MOSFET,
Packaging: Bulk
Part Status: Active
    Description: 600V, 0.12OHM, N-CHANNEL MOSFET,
Packaging: Bulk
Part Status: Active
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| SP001385054 |  | 
Виробник: Infineon Technologies
Description: IPP60R120C7XKSA1 - 600V COOLMOS
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 7.8A, 10V
Power Dissipation (Max): 92W (Tc)
Vgs(th) (Max) @ Id: 4V @ 390µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 400 V
    Description: IPP60R120C7XKSA1 - 600V COOLMOS
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 7.8A, 10V
Power Dissipation (Max): 92W (Tc)
Vgs(th) (Max) @ Id: 4V @ 390µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 400 V
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| CY7C1370KV25-167AXC |  | 
Виробник: Infineon Technologies
Description: IC SRAM 18MBIT PAR 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.375V ~ 2.625V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 167 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 3.4 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
    Description: IC SRAM 18MBIT PAR 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.375V ~ 2.625V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 167 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 3.4 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
на замовлення 235 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 1+ | 723.65 грн | 
| FXE167F96F66LACXP |  | 
Виробник: Infineon Technologies
Description: IC MCU 16BIT 768KB FLASH 144LQFP
    Description: IC MCU 16BIT 768KB FLASH 144LQFP
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| SAF-XE167K-48F66LAC |  | 
Виробник: Infineon Technologies
Description: 16-BIT FLASH MICROCONTROLLER, 80
Packaging: Bulk
DigiKey Programmable: Not Verified
    Description: 16-BIT FLASH MICROCONTROLLER, 80
Packaging: Bulk
DigiKey Programmable: Not Verified
на замовлення 360 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 44+ | 549.61 грн | 
| SAF-XE167K-72F66LAC |  | 
Виробник: Infineon Technologies
Description: 16-BIT FLASH MICROCONTROLLER, 80
Packaging: Bulk
DigiKey Programmable: Not Verified
    Description: 16-BIT FLASH MICROCONTROLLER, 80
Packaging: Bulk
DigiKey Programmable: Not Verified
на замовлення 188 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 43+ | 559.90 грн | 
| SAF-XE167H-96F66LAC |  | 
Виробник: Infineon Technologies
Description: XE167 - 16-BIT FLASH RISC MICROC
Packaging: Bulk
Package / Case: 144-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 66MHz
Program Memory Size: 768KB (768K x 8)
RAM Size: 82K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 8, 16x8/10b SAR
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: EBI/EMI, I²C, LINbus, QSPI, SPI, SSC, UART/USART, USI
Peripherals: I²S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-144-4
Part Status: Active
Number of I/O: 118
DigiKey Programmable: Not Verified
    Description: XE167 - 16-BIT FLASH RISC MICROC
Packaging: Bulk
Package / Case: 144-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 66MHz
Program Memory Size: 768KB (768K x 8)
RAM Size: 82K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 8, 16x8/10b SAR
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: EBI/EMI, I²C, LINbus, QSPI, SPI, SSC, UART/USART, USI
Peripherals: I²S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-144-4
Part Status: Active
Number of I/O: 118
DigiKey Programmable: Not Verified
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| SAF-XE167F-96F80LACFXUMA1 |  | 
Виробник: Infineon Technologies
Description: 16-BIT FLASH RISC MCU
    Description: 16-BIT FLASH RISC MCU
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| SAFXE167F96F66LAC |  | 
Виробник: Infineon Technologies
Description: IC MCU 16BIT 768KB FLASH 144LQFP
    Description: IC MCU 16BIT 768KB FLASH 144LQFP
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| XE167F96F66LACFXUMA1 |  | 
Виробник: Infineon Technologies
Description: IC MCU 16BIT 768KB FLASH 144LQFP
Packaging: Tape & Reel (TR)
Package / Case: 144-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 66MHz
Program Memory Size: 768KB (768K x 8)
RAM Size: 82K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 24x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-144-4
Number of I/O: 118
DigiKey Programmable: Not Verified
    Description: IC MCU 16BIT 768KB FLASH 144LQFP
Packaging: Tape & Reel (TR)
Package / Case: 144-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 66MHz
Program Memory Size: 768KB (768K x 8)
RAM Size: 82K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 24x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-144-4
Number of I/O: 118
DigiKey Programmable: Not Verified
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| SAF-XE167GM-48F80L AA |  | 
Виробник: Infineon Technologies
Description: IC MCU 16BIT 384KB FLASH 144LQFP
Packaging: Tape & Reel (TR)
Package / Case: 144-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 384KB (384K x 8)
RAM Size: 34K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 16x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-144-4
Number of I/O: 119
DigiKey Programmable: Not Verified
    Description: IC MCU 16BIT 384KB FLASH 144LQFP
Packaging: Tape & Reel (TR)
Package / Case: 144-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 384KB (384K x 8)
RAM Size: 34K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 16x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-144-4
Number of I/O: 119
DigiKey Programmable: Not Verified
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| SAF-XE167GM-72F80L AA |  | 
Виробник: Infineon Technologies
Description: IC MCU 16BIT 576KB FLASH 144LQFP
    Description: IC MCU 16BIT 576KB FLASH 144LQFP
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| SAF-XE167HM-48F80L AA |  | 
Виробник: Infineon Technologies
Description: IC MCU 16BIT 384KB FLASH 144LQFP
    Description: IC MCU 16BIT 384KB FLASH 144LQFP
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| EVAL1ED44176N01FTOBO1 |  | 
Виробник: Infineon Technologies
Description: EVAL BOARD FOR 1ED44176N01F
Packaging: Bulk
Function: Gate Driver
Type: Power Management
Utilized IC / Part: 1ED44176N01F
Supplied Contents: Board(s)
Part Status: Active
Contents: Board(s)
    Description: EVAL BOARD FOR 1ED44176N01F
Packaging: Bulk
Function: Gate Driver
Type: Power Management
Utilized IC / Part: 1ED44176N01F
Supplied Contents: Board(s)
Part Status: Active
Contents: Board(s)
на замовлення 3 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 1+ | 2256.05 грн | 
| ETD480N22P60HPSA1 |  | 
Виробник: Infineon Technologies
Description: THYR / DIODE MODULE DK
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 135°C (TC)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 14700A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 480 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Current - On State (It (RMS)) (Max): 700 A
Voltage - Off State: 2.2 kV
    Description: THYR / DIODE MODULE DK
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 135°C (TC)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 14700A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 480 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Current - On State (It (RMS)) (Max): 700 A
Voltage - Off State: 2.2 kV
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| TC267D40F200NBCKXUMA1 |  | 
Виробник: Infineon Technologies
Description: IC MCU 32BIT 2.5MB FLSH 292LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 2.5MB (2.5M x 8)
RAM Size: 240K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 96K x 8
Core Processor: TriCore™
Data Converters: A/D 48x12b SAR, 3 x Sigma-Delta
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 3.3V, 5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, WDT
Supplier Device Package: PG-LFBGA-292-6
Number of I/O: 88
DigiKey Programmable: Not Verified
    Description: IC MCU 32BIT 2.5MB FLSH 292LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 2.5MB (2.5M x 8)
RAM Size: 240K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 96K x 8
Core Processor: TriCore™
Data Converters: A/D 48x12b SAR, 3 x Sigma-Delta
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 3.3V, 5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, WDT
Supplier Device Package: PG-LFBGA-292-6
Number of I/O: 88
DigiKey Programmable: Not Verified
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| TC267D40F200NBCKXUMA1 |  | 
Виробник: Infineon Technologies
Description: IC MCU 32BIT 2.5MB FLSH 292LFBGA
Packaging: Cut Tape (CT)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 2.5MB (2.5M x 8)
RAM Size: 240K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 96K x 8
Core Processor: TriCore™
Data Converters: A/D 48x12b SAR, 3 x Sigma-Delta
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 3.3V, 5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, WDT
Supplier Device Package: PG-LFBGA-292-6
Number of I/O: 88
DigiKey Programmable: Not Verified
    Description: IC MCU 32BIT 2.5MB FLSH 292LFBGA
Packaging: Cut Tape (CT)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 2.5MB (2.5M x 8)
RAM Size: 240K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 96K x 8
Core Processor: TriCore™
Data Converters: A/D 48x12b SAR, 3 x Sigma-Delta
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 3.3V, 5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, WDT
Supplier Device Package: PG-LFBGA-292-6
Number of I/O: 88
DigiKey Programmable: Not Verified
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| IAUC100N04S6L025ATMA1 |  | 
Виробник: Infineon Technologies
Description: IAUC100N04S6L025ATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.56mOhm @ 50A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 2V @ 24µA
Supplier Device Package: PG-TDSON-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2019 pF @ 25 V
Qualification: AEC-Q101
    Description: IAUC100N04S6L025ATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.56mOhm @ 50A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 2V @ 24µA
Supplier Device Package: PG-TDSON-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2019 pF @ 25 V
Qualification: AEC-Q101
на замовлення 35000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 5000+ | 25.37 грн | 
| IAUC100N04S6L025ATMA1 |  | 
Виробник: Infineon Technologies
Description: IAUC100N04S6L025ATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.56mOhm @ 50A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 2V @ 24µA
Supplier Device Package: PG-TDSON-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2019 pF @ 25 V
Qualification: AEC-Q101
    Description: IAUC100N04S6L025ATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.56mOhm @ 50A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 2V @ 24µA
Supplier Device Package: PG-TDSON-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2019 pF @ 25 V
Qualification: AEC-Q101
на замовлення 36287 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 4+ | 104.91 грн | 
| 10+ | 64.75 грн | 
| 100+ | 43.30 грн | 
| 500+ | 32.19 грн | 
| 1000+ | 28.06 грн | 
| TDB6HK165N16LOFHOSA1 | 
Виробник: Infineon Technologies
Description: SCR MODULE VDRM 1600V 70A
Packaging: Bulk
Part Status: Discontinued at Digi-Key
    Description: SCR MODULE VDRM 1600V 70A
Packaging: Bulk
Part Status: Discontinued at Digi-Key
на замовлення 32 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 2+ | 16421.43 грн | 
| TDB6HK124N16RRBOSA1 |  | 
Виробник: Infineon Technologies
Description: SCR MODULE 1.6KV 70A MODULE
    Description: SCR MODULE 1.6KV 70A MODULE
на замовлення 10 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| TDB6HK240N16PBOSA1 |  | 
Виробник: Infineon Technologies
Description: THYRISTOR MODULE VDRM 1600V 70A
    Description: THYRISTOR MODULE VDRM 1600V 70A
на замовлення 6 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 1+ | 16412.76 грн | 
| TDB6HK180N16RRB21BOSA1 |  | 
на замовлення 10 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 3+ | 10850.14 грн | 
| TDB6HK165N16LOFHOSA1 | 
Виробник: Infineon Technologies
Description: SCR MODULE VDRM 1600V 70A
Packaging: Tray
Part Status: Discontinued at Digi-Key
    Description: SCR MODULE VDRM 1600V 70A
Packaging: Tray
Part Status: Discontinued at Digi-Key
товару немає в наявності
    В кошику
     од. на суму     грн.
| TDB6HK360N16P |  | 
Виробник: Infineon Technologies
Description: TDBXHK360 - BRIDGE RECTIFIER & A
    Description: TDBXHK360 - BRIDGE RECTIFIER & A
товару немає в наявності
    В кошику
     од. на суму     грн.