Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (122989) > Сторінка 407 з 2050
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||||
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| FF800R17KF6CB2NOSA2 | Infineon Technologies |
Description: IGBT MODULE A-IHM130-1 Packaging: Bulk |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
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| FF800R12KL4CNOSA1 | Infineon Technologies |
Description: IGBT MOD 1200V 1250A AG-PRIME2Input Capacitance (Cies) @ Vce: 56 nF @ 25 V Current - Collector Cutoff (Max): 5 mA Power - Max: 5000 W Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 1250 A Part Status: Obsolete Supplier Device Package: AG-PRIME2 NTC Thermistor: No Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 800A Operating Temperature: -40°C ~ 125°C (TJ) Configuration: 2 Independent Mounting Type: Chassis Mount Package / Case: Module Packaging: Bulk |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
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BSZ011NE2LS5IATMA1 | Infineon Technologies |
Description: MOSFET N-CH 25V 35A/40A TSDSONPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 40A (Tc) Rds On (Max) @ Id, Vgs: 1.1mOhm @ 20A, 10V Power Dissipation (Max): 2.1W (Ta), 69W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PG-TSDSON-8-34 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 12 V |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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FF200R33KF2CNOSA1 | Infineon Technologies |
Description: IGBT MOD 3300V 330A 2200WInput Capacitance (Cies) @ Vce: 25 nF @ 25 V Current - Collector Cutoff (Max): 5 mA Power - Max: 2200 W Voltage - Collector Emitter Breakdown (Max): 3300 V Current - Collector (Ic) (Max): 330 A Part Status: Obsolete Supplier Device Package: Module NTC Thermistor: No Vce(on) (Max) @ Vge, Ic: 4.25V @ 15V, 200A Operating Temperature: -40°C ~ 125°C Configuration: 2 Independent Input: Standard Mounting Type: Chassis Mount Package / Case: Module Packaging: Bulk |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
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BBY55-03WE6327 | Infineon Technologies |
Description: BBY55 - VARACTOR DIODEPackaging: Bulk Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Diode Type: Single Operating Temperature: -55°C ~ 150°C Capacitance @ Vr, F: 6.5pF @ 10V, 1MHz Capacitance Ratio Condition: C2/C10 Supplier Device Package: PG-SOD323-2 Part Status: Active Voltage - Peak Reverse (Max): 16 V Capacitance Ratio: 2.5 |
на замовлення 5750 шт: термін постачання 21-31 дні (днів) |
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BBY55-02WH6327 | Infineon Technologies |
Description: VARIABLE CAPACITANCE DIODEPackaging: Bulk Package / Case: SC-80 Mounting Type: Surface Mount Diode Type: Single Operating Temperature: -55°C ~ 150°C Capacitance @ Vr, F: 6.5pF @ 10V, 1MHz Capacitance Ratio Condition: C2/C10 Supplier Device Package: PG-SCD80-2 Voltage - Peak Reverse (Max): 16 V Capacitance Ratio: 2.5 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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FD1000R17IE4BOSA2 | Infineon Technologies |
Description: IGBT MODULE 1700V 6250W MODULEPackaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -40°C ~ 150°C Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 1000A NTC Thermistor: Yes Supplier Device Package: Module Part Status: Not For New Designs Voltage - Collector Emitter Breakdown (Max): 1700 V Power - Max: 6250 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 81 nF @ 25 V |
на замовлення 222 шт: термін постачання 21-31 дні (днів) |
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FD1000R33HL3KBPSA1 | Infineon Technologies |
Description: IGBT MOD 3300V 1000A 11500W MODPackaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: 2 Independent Operating Temperature: -40°C ~ 150°C Vce(on) (Max) @ Vge, Ic: 2.85V @ 15V, 1000A NTC Thermistor: No Supplier Device Package: Module IGBT Type: Trench Field Stop Part Status: Not For New Designs Current - Collector (Ic) (Max): 1000 A Voltage - Collector Emitter Breakdown (Max): 3300 V Power - Max: 11500 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 190 nF @ 25 V |
на замовлення 96 шт: термін постачання 21-31 дні (днів) |
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| FD1000R17IE4DB2BOSA1 | Infineon Technologies |
Description: IGBT MOD 1700V 1390A 6250W MODPackaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -40°C ~ 150°C Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 1000A NTC Thermistor: Yes Supplier Device Package: Module Part Status: Obsolete Current - Collector (Ic) (Max): 1390 A Voltage - Collector Emitter Breakdown (Max): 1700 V Power - Max: 6250 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 81 nF @ 25 V |
на замовлення 16 шт: термін постачання 21-31 дні (днів) |
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IPI530N15N3GXKSA1 | Infineon Technologies |
Description: PFET, 21A I(D), 150V, 0.053OHM, |
товару немає в наявності |
Мінімальне замовлення: 389 шт В кошику од. на суму грн. | ||||||||||||||||||
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TT425N16KOFHPSA3 | Infineon Technologies |
Description: SCR MODULE 1.6KV 800A MODULEPackaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 125°C Structure: Series Connection - All SCRs Current - Hold (Ih) (Max): 300 mA Current - Gate Trigger (Igt) (Max): 250 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 14500A @ 50Hz Number of SCRs, Diodes: 2 SCRs Current - On State (It (AV)) (Max): 471 A Voltage - Gate Trigger (Vgt) (Max): 1.5 V Part Status: Active Current - On State (It (RMS)) (Max): 800 A Voltage - Off State: 1.6 kV |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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DD600N16KAHPSA1 | Infineon Technologies |
Description: DIODE MOD GP 1600V 600A BGPB60Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 600A Supplier Device Package: BG-PB60-1 Operating Temperature - Junction: 150°C Voltage - DC Reverse (Vr) (Max): 1600 V Voltage - Forward (Vf) (Max) @ If: 1.32 V @ 1800 A Current - Reverse Leakage @ Vr: 40 mA @ 1600 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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TLE9250XLEXUMA1 | Infineon Technologies |
Description: IC TRANSCEIVER 1/1 PGTSON81Packaging: Tape & Reel (TR) Package / Case: 8-TDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Type: Transceiver Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 4.5V ~ 5.5V Number of Drivers/Receivers: 1/1 Data Rate: 5Mbps Protocol: CANbus Supplier Device Package: PG-TSON-8-1 Receiver Hysteresis: 100 mV Part Status: Active Grade: Automotive Qualification: AEC-Q100 |
на замовлення 20000 шт: термін постачання 21-31 дні (днів) |
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TLE9250XLEXUMA1 | Infineon Technologies |
Description: IC TRANSCEIVER 1/1 PGTSON81Packaging: Cut Tape (CT) Package / Case: 8-TDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Type: Transceiver Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 4.5V ~ 5.5V Number of Drivers/Receivers: 1/1 Data Rate: 5Mbps Protocol: CANbus Supplier Device Package: PG-TSON-8-1 Receiver Hysteresis: 100 mV Part Status: Active Grade: Automotive Qualification: AEC-Q100 |
на замовлення 25227 шт: термін постачання 21-31 дні (днів) |
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CY8C20666A-24LTXI | Infineon Technologies |
Description: MCU 32K FLASH 2K SRAM 48QFNDigiKey Programmable: Not Verified Number of I/O: 36 Part Status: Obsolete Supplier Device Package: 48-QFN (7x7) Core Processor: M8C Applications: Capacitive Sensing Program Memory Type: FLASH (32kB) Controller Series: CY8C20xx6A Voltage - Supply: 1.71V ~ 5.5V Operating Temperature: -40°C ~ 85°C RAM Size: 2K x 8 Interface: I²C, SPI, USB Mounting Type: Surface Mount Package / Case: 48-VFQFN Exposed Pad Packaging: Bulk |
на замовлення 1220 шт: термін постачання 21-31 дні (днів) |
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CY8C3666AXI-202 | Infineon Technologies |
Description: IC MCU 8BIT 64KB FLASH 100TQFP |
на замовлення 160 шт: термін постачання 21-31 дні (днів) |
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CY8C20666AS-24LQXI | Infineon Technologies |
Description: IC CAPSENSE 32KB FLASH 48QFNDigiKey Programmable: Not Verified Number of I/O: 36 Supplier Device Package: 48-QFN (6x6) Core Processor: M8C Applications: Capacitive Sensing Program Memory Type: FLASH (32kB) Controller Series: CY8C20xx6A Voltage - Supply: 1.71V ~ 5.5V Operating Temperature: -40°C ~ 85°C RAM Size: 2K x 8 Interface: I2C, SPI, USB Mounting Type: Surface Mount Package / Case: 48-UFQFN Exposed Pad Packaging: Tray |
на замовлення 8758 шт: термін постачання 21-31 дні (днів) |
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TLI493DW2BWA3XTMA1 | Infineon Technologies |
Description: MAGNETIC SWITCH PROG 5WLCSPSupplier Device Package: 5-WLCSP (1.13x0.93) Current - Supply (Max): 5mA Sensing Range: ±160mT Technology: Hall Effect Voltage - Supply: 2.8V ~ 3.5V Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Surface Mount Output Type: Open Drain Package / Case: 5-UFBGA, WLCSP Features: Temperature Compensated Packaging: Cut Tape (CT) |
на замовлення 8643 шт: термін постачання 21-31 дні (днів) |
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TLI493DW2BWA0XTSA1 | Infineon Technologies |
Description: SEN HALL EFFT OPEN DRAIN 5-WLCSPPackaging: Tape & Reel (TR) Features: Temperature Compensated Package / Case: 5-UFBGA, WLCSP Output Type: Open Drain Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TJ) Voltage - Supply: 2.8V ~ 3.5V Technology: Hall Effect Sensing Range: ±160mT Current - Supply (Max): 5mA Supplier Device Package: 5-WLCSP (1.13x0.93) |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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TLI493DW2BWA0XTMA1 | Infineon Technologies |
Description: SEN HALL EFFT OPEN DRAIN 5-WLCSPTest Condition: -40°C ~ 125°C Supplier Device Package: 5-WLCSP (1.13x0.93) Current - Supply (Max): 5mA Sensing Range: ±160mT Technology: Hall Effect Voltage - Supply: 2.8V ~ 3.5V Operating Temperature: -40°C ~ 125°C (TJ) Function: Programmable Mounting Type: Surface Mount Polarization: South Pole Output Type: Open Drain Package / Case: 5-UFBGA, WLCSP Features: Temperature Compensated Packaging: Cut Tape (CT) |
на замовлення 9965 шт: термін постачання 21-31 дні (днів) |
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TLI493DW2BWA1XTMA1 | Infineon Technologies |
Description: SEN HALL EFFT OPEN DRAIN 5-WLCSPPackaging: Cut Tape (CT) Features: Temperature Compensated Package / Case: 5-UFBGA, WLCSP Output Type: Open Drain Polarization: South Pole Mounting Type: Surface Mount Function: Programmable Operating Temperature: -40°C ~ 125°C (TJ) Voltage - Supply: 2.8V ~ 3.5V Technology: Hall Effect Sensing Range: ±160mT Current - Supply (Max): 5mA Supplier Device Package: 5-WLCSP (1.13x0.93) Test Condition: -40°C ~ 125°C |
на замовлення 1376 шт: термін постачання 21-31 дні (днів) |
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CY24293ZXCT | Infineon Technologies |
Description: IC CLK BUFFER 2PR 3.3V 16-TSSOP |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||||
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BC857B E6327 | Infineon Technologies |
Description: TRANS PNP 45V 0.1A SOT23Power - Max: 330 mW Voltage - Collector Emitter Breakdown (Max): 45 V Current - Collector (Ic) (Max): 100 mA Part Status: Active Supplier Device Package: PG-SOT23 Frequency - Transition: 250MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V Current - Collector Cutoff (Max): 15nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Operating Temperature: 150°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Bulk |
на замовлення 303389 шт: термін постачання 21-31 дні (днів) |
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BCR119WE6327 | Infineon Technologies |
Description: TRANS PREBIASPackaging: Bulk |
на замовлення 123000 шт: термін постачання 21-31 дні (днів) |
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| BCR119WH6327 | Infineon Technologies |
Description: BIPOLAR DIGITAL TRANSISTORPackaging: Bulk Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V Supplier Device Package: PG-SOT323-3-1 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 250 mW Frequency - Transition: 150 MHz Resistor - Base (R1): 4.7 kOhms |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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BCR191E6327 | Infineon Technologies |
Description: BIPOLAR DIGITAL TRANSISTORPackaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V Supplier Device Package: PG-SOT23-3-1 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 22 kOhms Resistor - Emitter Base (R2): 22 kOhms |
на замовлення 60871 шт: термін постачання 21-31 дні (днів) |
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TUA 6036 T | Infineon Technologies |
Description: IC VIDEO TUNER 38TSSOPPackaging: Tape & Reel (TR) Package / Case: 38-TFSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Function: Tuner Voltage - Supply: 4.5V ~ 5.5V Applications: Consumer Video Standards: NTSC, PAL Supplier Device Package: PG-TSSOP-38 Control Interface: I2C |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||||
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D850N36TXPSA1 | Infineon Technologies |
Description: DIODE GEN PURP 3.6KV 850ACurrent - Reverse Leakage @ Vr: 50 mA @ 3600 V Voltage - Forward (Vf) (Max) @ If: 1.28 V @ 850 A Voltage - DC Reverse (Vr) (Max): 3600 V Operating Temperature - Junction: -40°C ~ 160°C Current - Average Rectified (Io): 850A Technology: Standard Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Clamp On Package / Case: DO-200AB, B-PUK Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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D740N36TXPSA1 | Infineon Technologies |
Description: DIODE GEN PURP 3.6KV 750A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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D270N36TXPSA1 | Infineon Technologies |
Description: DIODE GEN PURP 3.6KV 270ACurrent - Reverse Leakage @ Vr: 20 mA @ 3600 V Voltage - Forward (Vf) (Max) @ If: 1.36 V @ 250 A Voltage - DC Reverse (Vr) (Max): 3600 V Operating Temperature - Junction: -40°C ~ 150°C Current - Average Rectified (Io): 270A Technology: Standard Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Clamp On Package / Case: DO-200AB, B-PUK Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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ASP1212-N20NT | Infineon Technologies |
Description: IC REG CTRLR VR11 1OUT 56VQFNSupplier Device Package: PG-VQFN-56-901 Applications: Controller, Intel VR11, VR11.1, AMD CPU Operating Temperature: 0°C ~ 85°C (TA) Voltage - Input: 3.3V Number of Outputs: 1 Mounting Type: Surface Mount Package / Case: 56-VFQFN Exposed Pad Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| ASP1212-N50NT | Infineon Technologies |
Description: IC REGULATOR PG-VQFN-56-901Part Status: Obsolete Supplier Device Package: 56-VQFN (8x8) Applications: Controller, Intel VR11, VR11.1, AMD CPU Operating Temperature: 0°C ~ 85°C (TA) Voltage - Input: 3.3V Number of Outputs: 1 Mounting Type: Surface Mount Package / Case: 56-VFQFN Exposed Pad Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| ASP1212-N60DT | Infineon Technologies |
Description: IC REGULATOR PG-VQFN-56-901 Part Status: Obsolete Supplier Device Package: 56-VQFN (8x8) Applications: Controller, Intel VR11, VR11.1, AMD CPU Operating Temperature: 0°C ~ 85°C (TA) Voltage - Input: 3.3V Number of Outputs: 1 Mounting Type: Surface Mount Package / Case: 56-VFQFN Exposed Pad Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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ASP1212-N60NT | Infineon Technologies |
Description: IC REG CTRLR VR11 1OUT 56VQFNSupplier Device Package: PG-VQFN-56-901 Applications: Controller, Intel VR11, VR11.1, AMD CPU Operating Temperature: 0°C ~ 85°C (TA) Voltage - Input: 3.3V Number of Outputs: 1 Mounting Type: Surface Mount Package / Case: 56-VFQFN Exposed Pad Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BAR88-02LRHE6327 | Infineon Technologies |
Description: PIN DIODE, 80V V(BR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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2ED2101S06FXUMA1 | Infineon Technologies |
Description: IC GATE DRVR HI/LOW SIDE 8SOICPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 10V ~ 20V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 650 V Supplier Device Package: PG-DSO-8-69 Rise / Fall Time (Typ): 70ns, 35ns Channel Type: Independent Driven Configuration: High-Side and Low-Side Number of Drivers: 2 Gate Type: IGBT, MOSFET (N-Channel) Logic Voltage - VIL, VIH: 1.1V, 1.7V Current - Peak Output (Source, Sink): 290mA, 700mA Part Status: Active DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||||
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2ED2101S06FXUMA1 | Infineon Technologies |
Description: IC GATE DRVR HI/LOW SIDE 8SOICPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 10V ~ 20V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 650 V Supplier Device Package: PG-DSO-8-69 Rise / Fall Time (Typ): 70ns, 35ns Channel Type: Independent Driven Configuration: High-Side and Low-Side Number of Drivers: 2 Gate Type: IGBT, MOSFET (N-Channel) Logic Voltage - VIL, VIH: 1.1V, 1.7V Current - Peak Output (Source, Sink): 290mA, 700mA Part Status: Active DigiKey Programmable: Not Verified |
на замовлення 2238 шт: термін постачання 21-31 дні (днів) |
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S25FS064SAGMFN010 | Infineon Technologies |
Description: IC FLASH 64MBIT SPI/QUAD 8SOICPackaging: Bulk Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.7V ~ 2V Technology: FLASH - NOR Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-SOIC Part Status: Obsolete Memory Interface: SPI - Quad I/O, QPI Memory Organization: 8M x 8 DigiKey Programmable: Verified |
на замовлення 219 шт: термін постачання 21-31 дні (днів) |
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S25FL116K0XMFN013 | Infineon Technologies |
Description: IC FLASH 16MBIT SPI/QUAD 8SOICPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 16Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 108 MHz Memory Format: FLASH Supplier Device Package: 8-SOIC Write Cycle Time - Word, Page: 3ms Memory Interface: SPI - Quad I/O Memory Organization: 2M x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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S25FL116K0XMFN010 | Infineon Technologies |
Description: IC FLASH 16MBIT SPI/QUAD 8SOICDigiKey Programmable: Not Verified Memory Organization: 2M x 8 Memory Interface: SPI - Quad I/O Write Cycle Time - Word, Page: 3ms Supplier Device Package: 8-SOIC Memory Format: FLASH Clock Frequency: 108 MHz Technology: FLASH - NOR Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 125°C (TA) Memory Type: Non-Volatile Memory Size: 16Mbit Mounting Type: Surface Mount Package / Case: 8-SOIC (0.209", 5.30mm Width) Packaging: Tray |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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S25FL116K0XMFN011 | Infineon Technologies |
Description: IC FLASH 16MBIT SPI/QUAD 8SOICPackage / Case: 8-SOIC (0.209", 5.30mm Width) Packaging: Tube DigiKey Programmable: Not Verified Memory Organization: 2M x 8 Memory Interface: SPI - Quad I/O Write Cycle Time - Word, Page: 3ms Supplier Device Package: 8-SOIC Memory Format: FLASH Clock Frequency: 108 MHz Technology: FLASH - NOR Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 125°C (TA) Memory Type: Non-Volatile Memory Size: 16Mbit Mounting Type: Surface Mount |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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ILD1151 | Infineon Technologies |
Description: ILD1151 - LED DRIVER & ACTIVE BIPackaging: Bulk Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad Mounting Type: Surface Mount Number of Outputs: 1 Frequency: 100kHz ~ 500kHz Type: DC DC Controller Operating Temperature: -40°C ~ 125°C (TJ) Applications: Lighting Current - Output / Channel: 550mA Internal Switch(s): No Topology: Flyback, SEPIC, Step-Down (Buck), Step-Up (Boost) Supplier Device Package: PG-SSOP-14-1 Dimming: Analog, PWM Voltage - Supply (Min): 4.5V Voltage - Supply (Max): 45V Part Status: Active |
на замовлення 16296 шт: термін постачання 21-31 дні (днів) |
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| PX8244HDMG008XTMA1 | Infineon Technologies |
Description: LED PX8244HDMG008XTMA1Packaging: Bulk |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
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IPP90R500C3 | Infineon Technologies |
Description: MOSFET N-CH 900V 11A TO220-3Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V Drain to Source Voltage (Vdss): 900 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: PG-TO220-3 Vgs(th) (Max) @ Id: 3.5V @ 740µA Power Dissipation (Max): 156W (Tc) Rds On (Max) @ Id, Vgs: 500mOhm @ 6.6A, 10V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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IPB60R055CFD7ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 600V 38A TO263-3Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 38A (Tc) Rds On (Max) @ Id, Vgs: 55mOhm @ 18A, 10V Power Dissipation (Max): 178W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 900µA Supplier Device Package: PG-TO263-3-2 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3194 pF @ 400 V |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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IPB60R055CFD7ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 600V 38A TO263-3Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 38A (Tc) Rds On (Max) @ Id, Vgs: 55mOhm @ 18A, 10V Power Dissipation (Max): 178W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 900µA Supplier Device Package: PG-TO263-3-2 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3194 pF @ 400 V |
на замовлення 5304 шт: термін постачання 21-31 дні (днів) |
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IPB60R070CFD7ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 600V 31A TO263-3Input Capacitance (Ciss) (Max) @ Vds: 2721 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: PG-TO263-3-2 Vgs(th) (Max) @ Id: 4.5V @ 760µA Power Dissipation (Max): 156W (Tc) Rds On (Max) @ Id, Vgs: 70mOhm @ 15.1A, 10V Current - Continuous Drain (Id) @ 25°C: 31A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) |
на замовлення 1827 шт: термін постачання 21-31 дні (днів) |
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IPB60R040CFD7ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 600V 50A TO263-3Supplier Device Package: PG-TO263-3-2 Vgs(th) (Max) @ Id: 4.5V @ 1.25mA Power Dissipation (Max): 227W (Tc) Rds On (Max) @ Id, Vgs: 40mOhm @ 24.9A, 10V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 4351 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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IPB60R040CFD7ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 600V 50A TO263-3Input Capacitance (Ciss) (Max) @ Vds: 4351 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: PG-TO263-3-2 Vgs(th) (Max) @ Id: 4.5V @ 1.25mA Power Dissipation (Max): 227W (Tc) Rds On (Max) @ Id, Vgs: 40mOhm @ 24.9A, 10V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) |
на замовлення 3010 шт: термін постачання 21-31 дні (днів) |
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IPD60R750E6BTMA1 | Infineon Technologies |
Description: MOSFET N-CH 600V 5.7A TO252 |
на замовлення 36500 шт: термін постачання 21-31 дні (днів) |
Мінімальне замовлення: 662 шт В кошику од. на суму грн. | ||||||||||||||||||
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IPD60R380E6ATMA2 | Infineon Technologies |
Description: MOSFET N-CH 600V 10.6A TO252-3Packaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc) Rds On (Max) @ Id, Vgs: 380mOhm @ 3.8A, 10V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 300µA Supplier Device Package: PG-TO252-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 100 V |
на замовлення 6650 шт: термін постачання 21-31 дні (днів) |
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IPD60R800CEAUMA1 | Infineon Technologies |
Description: CONSUMERPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.4A (Tc) Rds On (Max) @ Id, Vgs: 800mOhm @ 2A, 10V Power Dissipation (Max): 74W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 170µA Supplier Device Package: PG-TO252-3-344 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 373 pF @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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IPA126N10N3G | Infineon Technologies |
Description: 35A, 100V, 0.0126OHM, N-CHANNEL |
на замовлення 1450 шт: термін постачання 21-31 дні (днів) |
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CHL8328-35CRT | Infineon Technologies |
Description: IC REG CTRLR DDR 2OUT 56VQFN |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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IAUC41N06S5L100ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 60V 41A TDSON-8-33Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 41A (Tj) Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V Power Dissipation (Max): 42W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 13µA Supplier Device Package: PG-TDSON-8-33 Part Status: Active Vgs (Max): ±16V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 16.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1205 pF @ 30 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||||||
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ICE5QR1680BGXUMA1 | Infineon Technologies |
Description: IC OFFLINE SWITCH FLYBACK 12DSOPackaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TJ) Internal Switch(s): Yes Voltage - Breakdown: 800V Output Isolation: Isolated Topology: Flyback Voltage - Supply (Vcc/Vdd): 10V ~ 27V Supplier Device Package: PG-DSO-12-21 Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage Voltage - Start Up: 16 V Part Status: Active Power (Watts): 50 W |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||||
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ICE5QR1680BGXUMA1 | Infineon Technologies |
Description: IC OFFLINE SWITCH FLYBACK 12DSOPackaging: Cut Tape (CT) Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TJ) Internal Switch(s): Yes Voltage - Breakdown: 800V Output Isolation: Isolated Topology: Flyback Voltage - Supply (Vcc/Vdd): 10V ~ 27V Supplier Device Package: PG-DSO-12-21 Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage Voltage - Start Up: 16 V Part Status: Active Power (Watts): 50 W |
на замовлення 792 шт: термін постачання 21-31 дні (днів) |
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| IPC302N15N3X7SA1 | Infineon Technologies |
Description: MV POWER MOSDrain to Source Voltage (Vdss): 150 V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: Die Vgs(th) (Max) @ Id: 4V @ 270µA Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 10V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Mounting Type: Surface Mount Package / Case: Die Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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FZ400R17KE3S4HOSA1 | Infineon Technologies |
Description: IGBT MOD 1700V 620A 2250WPackaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -40°C ~ 125°C Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 400A NTC Thermistor: No Supplier Device Package: Module IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 620 A Voltage - Collector Emitter Breakdown (Max): 1700 V Power - Max: 2250 W Current - Collector Cutoff (Max): 3 mA Input Capacitance (Cies) @ Vce: 36 nF @ 25 V |
на замовлення 363 шт: термін постачання 21-31 дні (днів) |
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FS225R12KE4BOSA1 | Infineon Technologies |
Description: IGBT MOD 1200V 320A 1100WPackaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Full Bridge Operating Temperature: -40°C ~ 150°C Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 225A NTC Thermistor: Yes Supplier Device Package: Module IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 320 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 1100 W Current - Collector Cutoff (Max): 3 mA Input Capacitance (Cies) @ Vce: 13 nF @ 25 V |
на замовлення 1561 шт: термін постачання 21-31 дні (днів) |
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| FF800R17KF6CB2NOSA2 |
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 88100.03 грн |
| FF800R12KL4CNOSA1 |
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Виробник: Infineon Technologies
Description: IGBT MOD 1200V 1250A AG-PRIME2
Input Capacitance (Cies) @ Vce: 56 nF @ 25 V
Current - Collector Cutoff (Max): 5 mA
Power - Max: 5000 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 1250 A
Part Status: Obsolete
Supplier Device Package: AG-PRIME2
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 800A
Operating Temperature: -40°C ~ 125°C (TJ)
Configuration: 2 Independent
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
Description: IGBT MOD 1200V 1250A AG-PRIME2
Input Capacitance (Cies) @ Vce: 56 nF @ 25 V
Current - Collector Cutoff (Max): 5 mA
Power - Max: 5000 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 1250 A
Part Status: Obsolete
Supplier Device Package: AG-PRIME2
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 800A
Operating Temperature: -40°C ~ 125°C (TJ)
Configuration: 2 Independent
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 63533.13 грн |
| BSZ011NE2LS5IATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 25V 35A/40A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8-34
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 12 V
Description: MOSFET N-CH 25V 35A/40A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8-34
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 12 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 70.51 грн |
| FF200R33KF2CNOSA1 |
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Виробник: Infineon Technologies
Description: IGBT MOD 3300V 330A 2200W
Input Capacitance (Cies) @ Vce: 25 nF @ 25 V
Current - Collector Cutoff (Max): 5 mA
Power - Max: 2200 W
Voltage - Collector Emitter Breakdown (Max): 3300 V
Current - Collector (Ic) (Max): 330 A
Part Status: Obsolete
Supplier Device Package: Module
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 4.25V @ 15V, 200A
Operating Temperature: -40°C ~ 125°C
Configuration: 2 Independent
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
Description: IGBT MOD 3300V 330A 2200W
Input Capacitance (Cies) @ Vce: 25 nF @ 25 V
Current - Collector Cutoff (Max): 5 mA
Power - Max: 2200 W
Voltage - Collector Emitter Breakdown (Max): 3300 V
Current - Collector (Ic) (Max): 330 A
Part Status: Obsolete
Supplier Device Package: Module
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 4.25V @ 15V, 200A
Operating Temperature: -40°C ~ 125°C
Configuration: 2 Independent
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 93812.65 грн |
| BBY55-03WE6327 |
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Виробник: Infineon Technologies
Description: BBY55 - VARACTOR DIODE
Packaging: Bulk
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 150°C
Capacitance @ Vr, F: 6.5pF @ 10V, 1MHz
Capacitance Ratio Condition: C2/C10
Supplier Device Package: PG-SOD323-2
Part Status: Active
Voltage - Peak Reverse (Max): 16 V
Capacitance Ratio: 2.5
Description: BBY55 - VARACTOR DIODE
Packaging: Bulk
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 150°C
Capacitance @ Vr, F: 6.5pF @ 10V, 1MHz
Capacitance Ratio Condition: C2/C10
Supplier Device Package: PG-SOD323-2
Part Status: Active
Voltage - Peak Reverse (Max): 16 V
Capacitance Ratio: 2.5
на замовлення 5750 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2206+ | 9.92 грн |
| BBY55-02WH6327 |
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Виробник: Infineon Technologies
Description: VARIABLE CAPACITANCE DIODE
Packaging: Bulk
Package / Case: SC-80
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 150°C
Capacitance @ Vr, F: 6.5pF @ 10V, 1MHz
Capacitance Ratio Condition: C2/C10
Supplier Device Package: PG-SCD80-2
Voltage - Peak Reverse (Max): 16 V
Capacitance Ratio: 2.5
Description: VARIABLE CAPACITANCE DIODE
Packaging: Bulk
Package / Case: SC-80
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 150°C
Capacitance @ Vr, F: 6.5pF @ 10V, 1MHz
Capacitance Ratio Condition: C2/C10
Supplier Device Package: PG-SCD80-2
Voltage - Peak Reverse (Max): 16 V
Capacitance Ratio: 2.5
товару немає в наявності
В кошику
од. на суму грн.
| FD1000R17IE4BOSA2 |
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Виробник: Infineon Technologies
Description: IGBT MODULE 1700V 6250W MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 1000A
NTC Thermistor: Yes
Supplier Device Package: Module
Part Status: Not For New Designs
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 6250 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 81 nF @ 25 V
Description: IGBT MODULE 1700V 6250W MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 1000A
NTC Thermistor: Yes
Supplier Device Package: Module
Part Status: Not For New Designs
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 6250 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 81 nF @ 25 V
на замовлення 222 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 37637.27 грн |
| FD1000R33HL3KBPSA1 |
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Виробник: Infineon Technologies
Description: IGBT MOD 3300V 1000A 11500W MOD
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.85V @ 15V, 1000A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 1000 A
Voltage - Collector Emitter Breakdown (Max): 3300 V
Power - Max: 11500 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 190 nF @ 25 V
Description: IGBT MOD 3300V 1000A 11500W MOD
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.85V @ 15V, 1000A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 1000 A
Voltage - Collector Emitter Breakdown (Max): 3300 V
Power - Max: 11500 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 190 nF @ 25 V
на замовлення 96 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 164777.13 грн |
| FD1000R17IE4DB2BOSA1 |
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Виробник: Infineon Technologies
Description: IGBT MOD 1700V 1390A 6250W MOD
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 1000A
NTC Thermistor: Yes
Supplier Device Package: Module
Part Status: Obsolete
Current - Collector (Ic) (Max): 1390 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 6250 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 81 nF @ 25 V
Description: IGBT MOD 1700V 1390A 6250W MOD
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 1000A
NTC Thermistor: Yes
Supplier Device Package: Module
Part Status: Obsolete
Current - Collector (Ic) (Max): 1390 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 6250 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 81 nF @ 25 V
на замовлення 16 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 43199.55 грн |
| IPI530N15N3GXKSA1 |
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Виробник: Infineon Technologies
Description: PFET, 21A I(D), 150V, 0.053OHM,
Description: PFET, 21A I(D), 150V, 0.053OHM,
товару немає в наявності
Мінімальне замовлення: 389 шт
В кошику
од. на суму грн.
| TT425N16KOFHPSA3 |
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Виробник: Infineon Technologies
Description: SCR MODULE 1.6KV 800A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 14500A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 471 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Part Status: Active
Current - On State (It (RMS)) (Max): 800 A
Voltage - Off State: 1.6 kV
Description: SCR MODULE 1.6KV 800A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 14500A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 471 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Part Status: Active
Current - On State (It (RMS)) (Max): 800 A
Voltage - Off State: 1.6 kV
товару немає в наявності
В кошику
од. на суму грн.
| DD600N16KAHPSA1 |
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Виробник: Infineon Technologies
Description: DIODE MOD GP 1600V 600A BGPB60
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 600A
Supplier Device Package: BG-PB60-1
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.32 V @ 1800 A
Current - Reverse Leakage @ Vr: 40 mA @ 1600 V
Description: DIODE MOD GP 1600V 600A BGPB60
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 600A
Supplier Device Package: BG-PB60-1
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.32 V @ 1800 A
Current - Reverse Leakage @ Vr: 40 mA @ 1600 V
товару немає в наявності
В кошику
од. на суму грн.
| TLE9250XLEXUMA1 |
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Виробник: Infineon Technologies
Description: IC TRANSCEIVER 1/1 PGTSON81
Packaging: Tape & Reel (TR)
Package / Case: 8-TDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Type: Transceiver
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 5.5V
Number of Drivers/Receivers: 1/1
Data Rate: 5Mbps
Protocol: CANbus
Supplier Device Package: PG-TSON-8-1
Receiver Hysteresis: 100 mV
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
Description: IC TRANSCEIVER 1/1 PGTSON81
Packaging: Tape & Reel (TR)
Package / Case: 8-TDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Type: Transceiver
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 5.5V
Number of Drivers/Receivers: 1/1
Data Rate: 5Mbps
Protocol: CANbus
Supplier Device Package: PG-TSON-8-1
Receiver Hysteresis: 100 mV
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 45.43 грн |
| 10000+ | 42.91 грн |
| 15000+ | 42.49 грн |
| TLE9250XLEXUMA1 |
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Виробник: Infineon Technologies
Description: IC TRANSCEIVER 1/1 PGTSON81
Packaging: Cut Tape (CT)
Package / Case: 8-TDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Type: Transceiver
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 5.5V
Number of Drivers/Receivers: 1/1
Data Rate: 5Mbps
Protocol: CANbus
Supplier Device Package: PG-TSON-8-1
Receiver Hysteresis: 100 mV
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
Description: IC TRANSCEIVER 1/1 PGTSON81
Packaging: Cut Tape (CT)
Package / Case: 8-TDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Type: Transceiver
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 5.5V
Number of Drivers/Receivers: 1/1
Data Rate: 5Mbps
Protocol: CANbus
Supplier Device Package: PG-TSON-8-1
Receiver Hysteresis: 100 mV
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 25227 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 94.54 грн |
| 10+ | 66.19 грн |
| 25+ | 60.02 грн |
| 100+ | 49.98 грн |
| 250+ | 46.94 грн |
| 500+ | 45.11 грн |
| 1000+ | 42.89 грн |
| 2500+ | 41.33 грн |
| CY8C20666A-24LTXI |
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Виробник: Infineon Technologies
Description: MCU 32K FLASH 2K SRAM 48QFN
DigiKey Programmable: Not Verified
Number of I/O: 36
Part Status: Obsolete
Supplier Device Package: 48-QFN (7x7)
Core Processor: M8C
Applications: Capacitive Sensing
Program Memory Type: FLASH (32kB)
Controller Series: CY8C20xx6A
Voltage - Supply: 1.71V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
RAM Size: 2K x 8
Interface: I²C, SPI, USB
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Packaging: Bulk
Description: MCU 32K FLASH 2K SRAM 48QFN
DigiKey Programmable: Not Verified
Number of I/O: 36
Part Status: Obsolete
Supplier Device Package: 48-QFN (7x7)
Core Processor: M8C
Applications: Capacitive Sensing
Program Memory Type: FLASH (32kB)
Controller Series: CY8C20xx6A
Voltage - Supply: 1.71V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
RAM Size: 2K x 8
Interface: I²C, SPI, USB
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Packaging: Bulk
на замовлення 1220 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 72+ | 326.24 грн |
| CY8C3666AXI-202 |
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Виробник: Infineon Technologies
Description: IC MCU 8BIT 64KB FLASH 100TQFP
Description: IC MCU 8BIT 64KB FLASH 100TQFP
на замовлення 160 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 39+ | 573.93 грн |
| CY8C20666AS-24LQXI |
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Виробник: Infineon Technologies
Description: IC CAPSENSE 32KB FLASH 48QFN
DigiKey Programmable: Not Verified
Number of I/O: 36
Supplier Device Package: 48-QFN (6x6)
Core Processor: M8C
Applications: Capacitive Sensing
Program Memory Type: FLASH (32kB)
Controller Series: CY8C20xx6A
Voltage - Supply: 1.71V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
RAM Size: 2K x 8
Interface: I2C, SPI, USB
Mounting Type: Surface Mount
Package / Case: 48-UFQFN Exposed Pad
Packaging: Tray
Description: IC CAPSENSE 32KB FLASH 48QFN
DigiKey Programmable: Not Verified
Number of I/O: 36
Supplier Device Package: 48-QFN (6x6)
Core Processor: M8C
Applications: Capacitive Sensing
Program Memory Type: FLASH (32kB)
Controller Series: CY8C20xx6A
Voltage - Supply: 1.71V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
RAM Size: 2K x 8
Interface: I2C, SPI, USB
Mounting Type: Surface Mount
Package / Case: 48-UFQFN Exposed Pad
Packaging: Tray
на замовлення 8758 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 104.61 грн |
| TLI493DW2BWA3XTMA1 |
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Виробник: Infineon Technologies
Description: MAGNETIC SWITCH PROG 5WLCSP
Supplier Device Package: 5-WLCSP (1.13x0.93)
Current - Supply (Max): 5mA
Sensing Range: ±160mT
Technology: Hall Effect
Voltage - Supply: 2.8V ~ 3.5V
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Output Type: Open Drain
Package / Case: 5-UFBGA, WLCSP
Features: Temperature Compensated
Packaging: Cut Tape (CT)
Description: MAGNETIC SWITCH PROG 5WLCSP
Supplier Device Package: 5-WLCSP (1.13x0.93)
Current - Supply (Max): 5mA
Sensing Range: ±160mT
Technology: Hall Effect
Voltage - Supply: 2.8V ~ 3.5V
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Output Type: Open Drain
Package / Case: 5-UFBGA, WLCSP
Features: Temperature Compensated
Packaging: Cut Tape (CT)
на замовлення 8643 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 89.89 грн |
| 5+ | 76.71 грн |
| 10+ | 72.98 грн |
| 25+ | 64.23 грн |
| 50+ | 61.35 грн |
| 100+ | 58.71 грн |
| 500+ | 52.53 грн |
| 1000+ | 50.59 грн |
| 5000+ | 46.68 грн |
| TLI493DW2BWA0XTSA1 |
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Виробник: Infineon Technologies
Description: SEN HALL EFFT OPEN DRAIN 5-WLCSP
Packaging: Tape & Reel (TR)
Features: Temperature Compensated
Package / Case: 5-UFBGA, WLCSP
Output Type: Open Drain
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 2.8V ~ 3.5V
Technology: Hall Effect
Sensing Range: ±160mT
Current - Supply (Max): 5mA
Supplier Device Package: 5-WLCSP (1.13x0.93)
Description: SEN HALL EFFT OPEN DRAIN 5-WLCSP
Packaging: Tape & Reel (TR)
Features: Temperature Compensated
Package / Case: 5-UFBGA, WLCSP
Output Type: Open Drain
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 2.8V ~ 3.5V
Technology: Hall Effect
Sensing Range: ±160mT
Current - Supply (Max): 5mA
Supplier Device Package: 5-WLCSP (1.13x0.93)
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4000+ | 60.63 грн |
| TLI493DW2BWA0XTMA1 |
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Виробник: Infineon Technologies
Description: SEN HALL EFFT OPEN DRAIN 5-WLCSP
Test Condition: -40°C ~ 125°C
Supplier Device Package: 5-WLCSP (1.13x0.93)
Current - Supply (Max): 5mA
Sensing Range: ±160mT
Technology: Hall Effect
Voltage - Supply: 2.8V ~ 3.5V
Operating Temperature: -40°C ~ 125°C (TJ)
Function: Programmable
Mounting Type: Surface Mount
Polarization: South Pole
Output Type: Open Drain
Package / Case: 5-UFBGA, WLCSP
Features: Temperature Compensated
Packaging: Cut Tape (CT)
Description: SEN HALL EFFT OPEN DRAIN 5-WLCSP
Test Condition: -40°C ~ 125°C
Supplier Device Package: 5-WLCSP (1.13x0.93)
Current - Supply (Max): 5mA
Sensing Range: ±160mT
Technology: Hall Effect
Voltage - Supply: 2.8V ~ 3.5V
Operating Temperature: -40°C ~ 125°C (TJ)
Function: Programmable
Mounting Type: Surface Mount
Polarization: South Pole
Output Type: Open Drain
Package / Case: 5-UFBGA, WLCSP
Features: Temperature Compensated
Packaging: Cut Tape (CT)
на замовлення 9965 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 90.66 грн |
| 5+ | 76.56 грн |
| 10+ | 72.83 грн |
| 25+ | 64.09 грн |
| 50+ | 61.21 грн |
| 100+ | 58.57 грн |
| 500+ | 52.41 грн |
| 1000+ | 50.47 грн |
| 5000+ | 46.58 грн |
| TLI493DW2BWA1XTMA1 |
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Виробник: Infineon Technologies
Description: SEN HALL EFFT OPEN DRAIN 5-WLCSP
Packaging: Cut Tape (CT)
Features: Temperature Compensated
Package / Case: 5-UFBGA, WLCSP
Output Type: Open Drain
Polarization: South Pole
Mounting Type: Surface Mount
Function: Programmable
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 2.8V ~ 3.5V
Technology: Hall Effect
Sensing Range: ±160mT
Current - Supply (Max): 5mA
Supplier Device Package: 5-WLCSP (1.13x0.93)
Test Condition: -40°C ~ 125°C
Description: SEN HALL EFFT OPEN DRAIN 5-WLCSP
Packaging: Cut Tape (CT)
Features: Temperature Compensated
Package / Case: 5-UFBGA, WLCSP
Output Type: Open Drain
Polarization: South Pole
Mounting Type: Surface Mount
Function: Programmable
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 2.8V ~ 3.5V
Technology: Hall Effect
Sensing Range: ±160mT
Current - Supply (Max): 5mA
Supplier Device Package: 5-WLCSP (1.13x0.93)
Test Condition: -40°C ~ 125°C
на замовлення 1376 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 82.14 грн |
| 5+ | 70.14 грн |
| 10+ | 66.79 грн |
| 25+ | 58.77 грн |
| 50+ | 56.14 грн |
| 100+ | 53.72 грн |
| 500+ | 48.07 грн |
| 1000+ | 46.29 грн |
| CY24293ZXCT |
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Виробник: Infineon Technologies
Description: IC CLK BUFFER 2PR 3.3V 16-TSSOP
Description: IC CLK BUFFER 2PR 3.3V 16-TSSOP
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
| BC857B E6327 |
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Виробник: Infineon Technologies
Description: TRANS PNP 45V 0.1A SOT23
Power - Max: 330 mW
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: PG-SOT23
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
Description: TRANS PNP 45V 0.1A SOT23
Power - Max: 330 mW
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: PG-SOT23
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
на замовлення 303389 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7818+ | 2.84 грн |
| BCR119WE6327 |
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на замовлення 123000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10764+ | 1.98 грн |
| BCR119WH6327 |
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Виробник: Infineon Technologies
Description: BIPOLAR DIGITAL TRANSISTOR
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
Supplier Device Package: PG-SOT323-3-1
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 4.7 kOhms
Description: BIPOLAR DIGITAL TRANSISTOR
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
Supplier Device Package: PG-SOT323-3-1
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 4.7 kOhms
товару немає в наявності
В кошику
од. на суму грн.
| BCR191E6327 |
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Виробник: Infineon Technologies
Description: BIPOLAR DIGITAL TRANSISTOR
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V
Supplier Device Package: PG-SOT23-3-1
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Description: BIPOLAR DIGITAL TRANSISTOR
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V
Supplier Device Package: PG-SOT23-3-1
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
на замовлення 60871 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8013+ | 2.90 грн |
| TUA 6036 T |
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Виробник: Infineon Technologies
Description: IC VIDEO TUNER 38TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Function: Tuner
Voltage - Supply: 4.5V ~ 5.5V
Applications: Consumer Video
Standards: NTSC, PAL
Supplier Device Package: PG-TSSOP-38
Control Interface: I2C
Description: IC VIDEO TUNER 38TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Function: Tuner
Voltage - Supply: 4.5V ~ 5.5V
Applications: Consumer Video
Standards: NTSC, PAL
Supplier Device Package: PG-TSSOP-38
Control Interface: I2C
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| D850N36TXPSA1 |
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Виробник: Infineon Technologies
Description: DIODE GEN PURP 3.6KV 850A
Current - Reverse Leakage @ Vr: 50 mA @ 3600 V
Voltage - Forward (Vf) (Max) @ If: 1.28 V @ 850 A
Voltage - DC Reverse (Vr) (Max): 3600 V
Operating Temperature - Junction: -40°C ~ 160°C
Current - Average Rectified (Io): 850A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Clamp On
Package / Case: DO-200AB, B-PUK
Packaging: Bulk
Description: DIODE GEN PURP 3.6KV 850A
Current - Reverse Leakage @ Vr: 50 mA @ 3600 V
Voltage - Forward (Vf) (Max) @ If: 1.28 V @ 850 A
Voltage - DC Reverse (Vr) (Max): 3600 V
Operating Temperature - Junction: -40°C ~ 160°C
Current - Average Rectified (Io): 850A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Clamp On
Package / Case: DO-200AB, B-PUK
Packaging: Bulk
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| D740N36TXPSA1 |
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Виробник: Infineon Technologies
Description: DIODE GEN PURP 3.6KV 750A
Description: DIODE GEN PURP 3.6KV 750A
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| D270N36TXPSA1 |
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Виробник: Infineon Technologies
Description: DIODE GEN PURP 3.6KV 270A
Current - Reverse Leakage @ Vr: 20 mA @ 3600 V
Voltage - Forward (Vf) (Max) @ If: 1.36 V @ 250 A
Voltage - DC Reverse (Vr) (Max): 3600 V
Operating Temperature - Junction: -40°C ~ 150°C
Current - Average Rectified (Io): 270A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Clamp On
Package / Case: DO-200AB, B-PUK
Packaging: Bulk
Description: DIODE GEN PURP 3.6KV 270A
Current - Reverse Leakage @ Vr: 20 mA @ 3600 V
Voltage - Forward (Vf) (Max) @ If: 1.36 V @ 250 A
Voltage - DC Reverse (Vr) (Max): 3600 V
Operating Temperature - Junction: -40°C ~ 150°C
Current - Average Rectified (Io): 270A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Clamp On
Package / Case: DO-200AB, B-PUK
Packaging: Bulk
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| ASP1212-N20NT |
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Виробник: Infineon Technologies
Description: IC REG CTRLR VR11 1OUT 56VQFN
Supplier Device Package: PG-VQFN-56-901
Applications: Controller, Intel VR11, VR11.1, AMD CPU
Operating Temperature: 0°C ~ 85°C (TA)
Voltage - Input: 3.3V
Number of Outputs: 1
Mounting Type: Surface Mount
Package / Case: 56-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Description: IC REG CTRLR VR11 1OUT 56VQFN
Supplier Device Package: PG-VQFN-56-901
Applications: Controller, Intel VR11, VR11.1, AMD CPU
Operating Temperature: 0°C ~ 85°C (TA)
Voltage - Input: 3.3V
Number of Outputs: 1
Mounting Type: Surface Mount
Package / Case: 56-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
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| ASP1212-N50NT |
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Виробник: Infineon Technologies
Description: IC REGULATOR PG-VQFN-56-901
Part Status: Obsolete
Supplier Device Package: 56-VQFN (8x8)
Applications: Controller, Intel VR11, VR11.1, AMD CPU
Operating Temperature: 0°C ~ 85°C (TA)
Voltage - Input: 3.3V
Number of Outputs: 1
Mounting Type: Surface Mount
Package / Case: 56-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Description: IC REGULATOR PG-VQFN-56-901
Part Status: Obsolete
Supplier Device Package: 56-VQFN (8x8)
Applications: Controller, Intel VR11, VR11.1, AMD CPU
Operating Temperature: 0°C ~ 85°C (TA)
Voltage - Input: 3.3V
Number of Outputs: 1
Mounting Type: Surface Mount
Package / Case: 56-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
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| ASP1212-N60DT |
Виробник: Infineon Technologies
Description: IC REGULATOR PG-VQFN-56-901
Part Status: Obsolete
Supplier Device Package: 56-VQFN (8x8)
Applications: Controller, Intel VR11, VR11.1, AMD CPU
Operating Temperature: 0°C ~ 85°C (TA)
Voltage - Input: 3.3V
Number of Outputs: 1
Mounting Type: Surface Mount
Package / Case: 56-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Description: IC REGULATOR PG-VQFN-56-901
Part Status: Obsolete
Supplier Device Package: 56-VQFN (8x8)
Applications: Controller, Intel VR11, VR11.1, AMD CPU
Operating Temperature: 0°C ~ 85°C (TA)
Voltage - Input: 3.3V
Number of Outputs: 1
Mounting Type: Surface Mount
Package / Case: 56-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
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| ASP1212-N60NT |
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Виробник: Infineon Technologies
Description: IC REG CTRLR VR11 1OUT 56VQFN
Supplier Device Package: PG-VQFN-56-901
Applications: Controller, Intel VR11, VR11.1, AMD CPU
Operating Temperature: 0°C ~ 85°C (TA)
Voltage - Input: 3.3V
Number of Outputs: 1
Mounting Type: Surface Mount
Package / Case: 56-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Description: IC REG CTRLR VR11 1OUT 56VQFN
Supplier Device Package: PG-VQFN-56-901
Applications: Controller, Intel VR11, VR11.1, AMD CPU
Operating Temperature: 0°C ~ 85°C (TA)
Voltage - Input: 3.3V
Number of Outputs: 1
Mounting Type: Surface Mount
Package / Case: 56-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
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| BAR88-02LRHE6327 |
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Виробник: Infineon Technologies
Description: PIN DIODE, 80V V(BR)
Description: PIN DIODE, 80V V(BR)
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| 2ED2101S06FXUMA1 |
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Виробник: Infineon Technologies
Description: IC GATE DRVR HI/LOW SIDE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-8-69
Rise / Fall Time (Typ): 70ns, 35ns
Channel Type: Independent
Driven Configuration: High-Side and Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 290mA, 700mA
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HI/LOW SIDE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-8-69
Rise / Fall Time (Typ): 70ns, 35ns
Channel Type: Independent
Driven Configuration: High-Side and Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 290mA, 700mA
Part Status: Active
DigiKey Programmable: Not Verified
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Мінімальне замовлення: 2500 шт
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| 2ED2101S06FXUMA1 |
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Виробник: Infineon Technologies
Description: IC GATE DRVR HI/LOW SIDE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-8-69
Rise / Fall Time (Typ): 70ns, 35ns
Channel Type: Independent
Driven Configuration: High-Side and Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 290mA, 700mA
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HI/LOW SIDE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-8-69
Rise / Fall Time (Typ): 70ns, 35ns
Channel Type: Independent
Driven Configuration: High-Side and Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 290mA, 700mA
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 2238 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 79.82 грн |
| 10+ | 55.52 грн |
| 25+ | 50.17 грн |
| 100+ | 41.62 грн |
| 250+ | 39.02 грн |
| 500+ | 37.45 грн |
| 1000+ | 35.56 грн |
| S25FS064SAGMFN010 |
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Виробник: Infineon Technologies
Description: IC FLASH 64MBIT SPI/QUAD 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 8M x 8
DigiKey Programmable: Verified
Description: IC FLASH 64MBIT SPI/QUAD 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 8M x 8
DigiKey Programmable: Verified
на замовлення 219 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 129+ | 180.55 грн |
| S25FL116K0XMFN013 |
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Виробник: Infineon Technologies
Description: IC FLASH 16MBIT SPI/QUAD 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 108 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 3ms
Memory Interface: SPI - Quad I/O
Memory Organization: 2M x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 16MBIT SPI/QUAD 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 108 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 3ms
Memory Interface: SPI - Quad I/O
Memory Organization: 2M x 8
DigiKey Programmable: Not Verified
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| S25FL116K0XMFN010 |
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Виробник: Infineon Technologies
Description: IC FLASH 16MBIT SPI/QUAD 8SOIC
DigiKey Programmable: Not Verified
Memory Organization: 2M x 8
Memory Interface: SPI - Quad I/O
Write Cycle Time - Word, Page: 3ms
Supplier Device Package: 8-SOIC
Memory Format: FLASH
Clock Frequency: 108 MHz
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 125°C (TA)
Memory Type: Non-Volatile
Memory Size: 16Mbit
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Packaging: Tray
Description: IC FLASH 16MBIT SPI/QUAD 8SOIC
DigiKey Programmable: Not Verified
Memory Organization: 2M x 8
Memory Interface: SPI - Quad I/O
Write Cycle Time - Word, Page: 3ms
Supplier Device Package: 8-SOIC
Memory Format: FLASH
Clock Frequency: 108 MHz
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 125°C (TA)
Memory Type: Non-Volatile
Memory Size: 16Mbit
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Packaging: Tray
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| S25FL116K0XMFN011 |
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Виробник: Infineon Technologies
Description: IC FLASH 16MBIT SPI/QUAD 8SOIC
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Packaging: Tube
DigiKey Programmable: Not Verified
Memory Organization: 2M x 8
Memory Interface: SPI - Quad I/O
Write Cycle Time - Word, Page: 3ms
Supplier Device Package: 8-SOIC
Memory Format: FLASH
Clock Frequency: 108 MHz
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 125°C (TA)
Memory Type: Non-Volatile
Memory Size: 16Mbit
Mounting Type: Surface Mount
Description: IC FLASH 16MBIT SPI/QUAD 8SOIC
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Packaging: Tube
DigiKey Programmable: Not Verified
Memory Organization: 2M x 8
Memory Interface: SPI - Quad I/O
Write Cycle Time - Word, Page: 3ms
Supplier Device Package: 8-SOIC
Memory Format: FLASH
Clock Frequency: 108 MHz
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 125°C (TA)
Memory Type: Non-Volatile
Memory Size: 16Mbit
Mounting Type: Surface Mount
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| ILD1151 |
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Виробник: Infineon Technologies
Description: ILD1151 - LED DRIVER & ACTIVE BI
Packaging: Bulk
Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 100kHz ~ 500kHz
Type: DC DC Controller
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: Lighting
Current - Output / Channel: 550mA
Internal Switch(s): No
Topology: Flyback, SEPIC, Step-Down (Buck), Step-Up (Boost)
Supplier Device Package: PG-SSOP-14-1
Dimming: Analog, PWM
Voltage - Supply (Min): 4.5V
Voltage - Supply (Max): 45V
Part Status: Active
Description: ILD1151 - LED DRIVER & ACTIVE BI
Packaging: Bulk
Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 100kHz ~ 500kHz
Type: DC DC Controller
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: Lighting
Current - Output / Channel: 550mA
Internal Switch(s): No
Topology: Flyback, SEPIC, Step-Down (Buck), Step-Up (Boost)
Supplier Device Package: PG-SSOP-14-1
Dimming: Analog, PWM
Voltage - Supply (Min): 4.5V
Voltage - Supply (Max): 45V
Part Status: Active
на замовлення 16296 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 218+ | 101.22 грн |
| PX8244HDMG008XTMA1 |
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на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 64+ | 347.39 грн |
| IPP90R500C3 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 900V 11A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Drain to Source Voltage (Vdss): 900 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PG-TO220-3
Vgs(th) (Max) @ Id: 3.5V @ 740µA
Power Dissipation (Max): 156W (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 6.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bulk
Description: MOSFET N-CH 900V 11A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Drain to Source Voltage (Vdss): 900 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PG-TO220-3
Vgs(th) (Max) @ Id: 3.5V @ 740µA
Power Dissipation (Max): 156W (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 6.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bulk
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| IPB60R055CFD7ATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 38A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 18A, 10V
Power Dissipation (Max): 178W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 900µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3194 pF @ 400 V
Description: MOSFET N-CH 600V 38A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 18A, 10V
Power Dissipation (Max): 178W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 900µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3194 pF @ 400 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1000+ | 242.08 грн |
| 2000+ | 220.69 грн |
| IPB60R055CFD7ATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 38A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 18A, 10V
Power Dissipation (Max): 178W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 900µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3194 pF @ 400 V
Description: MOSFET N-CH 600V 38A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 18A, 10V
Power Dissipation (Max): 178W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 900µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3194 pF @ 400 V
на замовлення 5304 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 616.83 грн |
| 10+ | 402.21 грн |
| 100+ | 293.99 грн |
| 500+ | 232.65 грн |
| IPB60R070CFD7ATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 31A TO263-3
Input Capacitance (Ciss) (Max) @ Vds: 2721 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO263-3-2
Vgs(th) (Max) @ Id: 4.5V @ 760µA
Power Dissipation (Max): 156W (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 15.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 600V 31A TO263-3
Input Capacitance (Ciss) (Max) @ Vds: 2721 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO263-3-2
Vgs(th) (Max) @ Id: 4.5V @ 760µA
Power Dissipation (Max): 156W (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 15.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
на замовлення 1827 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 403.73 грн |
| 10+ | 272.74 грн |
| 100+ | 204.12 грн |
| 500+ | 171.89 грн |
| IPB60R040CFD7ATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 50A TO263-3
Supplier Device Package: PG-TO263-3-2
Vgs(th) (Max) @ Id: 4.5V @ 1.25mA
Power Dissipation (Max): 227W (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 24.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 4351 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Description: MOSFET N-CH 600V 50A TO263-3
Supplier Device Package: PG-TO263-3-2
Vgs(th) (Max) @ Id: 4.5V @ 1.25mA
Power Dissipation (Max): 227W (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 24.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 4351 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1000+ | 306.89 грн |
| 2000+ | 280.68 грн |
| IPB60R040CFD7ATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 50A TO263-3
Input Capacitance (Ciss) (Max) @ Vds: 4351 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO263-3-2
Vgs(th) (Max) @ Id: 4.5V @ 1.25mA
Power Dissipation (Max): 227W (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 24.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 600V 50A TO263-3
Input Capacitance (Ciss) (Max) @ Vds: 4351 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO263-3-2
Vgs(th) (Max) @ Id: 4.5V @ 1.25mA
Power Dissipation (Max): 227W (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 24.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
на замовлення 3010 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 754.76 грн |
| 10+ | 497.72 грн |
| 100+ | 368.29 грн |
| 500+ | 303.31 грн |
| IPD60R750E6BTMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 5.7A TO252
Description: MOSFET N-CH 600V 5.7A TO252
на замовлення 36500 шт:
термін постачання 21-31 дні (днів)
| IPD60R380E6ATMA2 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 10.6A TO252-3
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.8A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 300µA
Supplier Device Package: PG-TO252-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 100 V
Description: MOSFET N-CH 600V 10.6A TO252-3
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.8A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 300µA
Supplier Device Package: PG-TO252-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 100 V
на замовлення 6650 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 315+ | 62.57 грн |
| IPD60R800CEAUMA1 |
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Виробник: Infineon Technologies
Description: CONSUMER
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.4A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 2A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 170µA
Supplier Device Package: PG-TO252-3-344
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 373 pF @ 100 V
Description: CONSUMER
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.4A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 2A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 170µA
Supplier Device Package: PG-TO252-3-344
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 373 pF @ 100 V
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В кошику
од. на суму грн.
| IPA126N10N3G |
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Виробник: Infineon Technologies
Description: 35A, 100V, 0.0126OHM, N-CHANNEL
Description: 35A, 100V, 0.0126OHM, N-CHANNEL
на замовлення 1450 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 399+ | 53.12 грн |
| CHL8328-35CRT |
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Виробник: Infineon Technologies
Description: IC REG CTRLR DDR 2OUT 56VQFN
Description: IC REG CTRLR DDR 2OUT 56VQFN
товару немає в наявності
В кошику
од. на суму грн.
| IAUC41N06S5L100ATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 41A TDSON-8-33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Tj)
Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 13µA
Supplier Device Package: PG-TDSON-8-33
Part Status: Active
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 16.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1205 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 41A TDSON-8-33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Tj)
Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 13µA
Supplier Device Package: PG-TDSON-8-33
Part Status: Active
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 16.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1205 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| ICE5QR1680BGXUMA1 |
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Виробник: Infineon Technologies
Description: IC OFFLINE SWITCH FLYBACK 12DSO
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 27V
Supplier Device Package: PG-DSO-12-21
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
Part Status: Active
Power (Watts): 50 W
Description: IC OFFLINE SWITCH FLYBACK 12DSO
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 27V
Supplier Device Package: PG-DSO-12-21
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
Part Status: Active
Power (Watts): 50 W
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| ICE5QR1680BGXUMA1 |
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Виробник: Infineon Technologies
Description: IC OFFLINE SWITCH FLYBACK 12DSO
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 27V
Supplier Device Package: PG-DSO-12-21
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
Part Status: Active
Power (Watts): 50 W
Description: IC OFFLINE SWITCH FLYBACK 12DSO
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 27V
Supplier Device Package: PG-DSO-12-21
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
Part Status: Active
Power (Watts): 50 W
на замовлення 792 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 150.33 грн |
| 10+ | 107.45 грн |
| 25+ | 98.02 грн |
| 100+ | 82.25 грн |
| 250+ | 77.61 грн |
| 500+ | 75.23 грн |
| IPC302N15N3X7SA1 |
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Виробник: Infineon Technologies
Description: MV POWER MOS
Drain to Source Voltage (Vdss): 150 V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: Die
Vgs(th) (Max) @ Id: 4V @ 270µA
Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 10V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Description: MV POWER MOS
Drain to Source Voltage (Vdss): 150 V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: Die
Vgs(th) (Max) @ Id: 4V @ 270µA
Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 10V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
товару немає в наявності
В кошику
од. на суму грн.
| FZ400R17KE3S4HOSA1 |
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Виробник: Infineon Technologies
Description: IGBT MOD 1700V 620A 2250W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 400A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 620 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 2250 W
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 36 nF @ 25 V
Description: IGBT MOD 1700V 620A 2250W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 400A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 620 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 2250 W
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 36 nF @ 25 V
на замовлення 363 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 8668.89 грн |
| FS225R12KE4BOSA1 |
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Виробник: Infineon Technologies
Description: IGBT MOD 1200V 320A 1100W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 225A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 320 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1100 W
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 13 nF @ 25 V
Description: IGBT MOD 1200V 320A 1100W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 225A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 320 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1100 W
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 13 nF @ 25 V
на замовлення 1561 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 25475.87 грн |









































