Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (148600) > Сторінка 419 з 2477
Фото | Назва | Виробник | Інформація |
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ETD630N18P60HPSA1 | Infineon Technologies |
![]() Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Operating Temperature: 135°C (TJ) Structure: Series Connection - SCR/Diode Current - Hold (Ih) (Max): 300 mA Current - Gate Trigger (Igt) (Max): 250 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 16800A, 20000A Number of SCRs, Diodes: 1 SCR, 1 Diode Current - On State (It (AV)) (Max): 628 A Voltage - Gate Trigger (Vgt) (Max): 2 V Part Status: Active Current - On State (It (RMS)) (Max): 700 A Voltage - Off State: 1.8 kV |
на замовлення 4 шт: термін постачання 21-31 дні (днів) |
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ETT630N18P60HPSA1 | Infineon Technologies |
![]() Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Operating Temperature: 135°C (TJ) Structure: Series Connection - All SCRs Current - Hold (Ih) (Max): 300 mA Current - Gate Trigger (Igt) (Max): 250 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 16800A, 20000A Number of SCRs, Diodes: 2 SCRs Current - On State (It (AV)) (Max): 628 A Voltage - Gate Trigger (Vgt) (Max): 2 V Part Status: Active Current - On State (It (RMS)) (Max): 700 A Voltage - Off State: 1.8 kV |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
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TLE4941CNBAMA1 | Infineon Technologies |
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товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
TLE4941CN | Infineon Technologies |
![]() Packaging: Bulk Package / Case: 2-SIP, SSO-2-53 Output Type: Current Source Polarization: North Pole, South Pole Mounting Type: Through Hole Function: Special Purpose Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 4.5V ~ 20V Technology: Hall Effect Current - Supply (Max): 16.8mA Supplier Device Package: PG-SSO-2-53 Part Status: Active |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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BAW56E6433 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 200mA (DC) Supplier Device Package: PG-SOT23 Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 150 nA @ 70 V |
на замовлення 96828 шт: термін постачання 21-31 дні (днів) |
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TLE4476DATMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD Output Type: Fixed Mounting Type: Surface Mount Current - Output: 350mA, 430mA Operating Temperature: -40°C ~ 170°C Output Configuration: Positive Current - Quiescent (Iq): 150 µA Voltage - Input (Max): 42V Number of Regulators: 2 Supplier Device Package: PG-TO252-5-11 Voltage - Output (Min/Fixed): 3.3V, 5V Control Features: Enable Part Status: Active PSRR: 60dB (20Hz ~ 20kHz), 60dB (20Hz ~ 20kHz) Voltage Dropout (Max): -, 0.7V @ 330mA Protection Features: Over Current, Over Temperature, Over Voltage, Reverse Polarity, Short Circuit Current - Supply (Max): 13 mA Grade: Automotive Qualification: AEC-Q100 |
на замовлення 7500 шт: термін постачання 21-31 дні (днів) |
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BSC019N04NSG | Infineon Technologies | Description: BSC019N04 - 12V-300V N-CHANNEL P |
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IDB06S60CATMA2 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 280pF @ 1V, 1MHz Current - Average Rectified (Io): 6A Supplier Device Package: PG-TO263-3-2 Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A Current - Reverse Leakage @ Vr: 80 µA @ 600 V |
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В кошику од. на суму грн. | ||||||||||||||
SFH 757V | Infineon Technologies |
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товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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IPW60R041C6 | Infineon Technologies |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IPW65R045C7 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 46A (Tc) Rds On (Max) @ Id, Vgs: 45mOhm @ 24.9A, 10V Power Dissipation (Max): 227W (Tc) Vgs(th) (Max) @ Id: 4V @ 1.25mA Supplier Device Package: PG-TO247-3-41 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4340 pF @ 400 V |
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В кошику од. на суму грн. | ||||||||||||||
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BSS139IXTSA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel, Depletion Mode Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Rds On (Max) @ Id, Vgs: 14Ohm @ 100mA, 10V Power Dissipation (Max): 360mW (Ta) Vgs(th) (Max) @ Id: 1V @ 56µA Supplier Device Package: PG-SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 0V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 2.3 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V |
на замовлення 36000 шт: термін постачання 21-31 дні (днів) |
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BSS139IXTSA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel, Depletion Mode Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Rds On (Max) @ Id, Vgs: 14Ohm @ 100mA, 10V Power Dissipation (Max): 360mW (Ta) Vgs(th) (Max) @ Id: 1V @ 56µA Supplier Device Package: PG-SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 0V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 2.3 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V |
на замовлення 36349 шт: термін постачання 21-31 дні (днів) |
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IRF6217TRPBF-1 | Infineon Technologies |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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XC2268N40F80LABKXUMA1 | Infineon Technologies |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BCR583E6327 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V Supplier Device Package: PG-SOT23-3-1 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 330 mW Frequency - Transition: 150 MHz Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms Grade: Automotive Qualification: AEC-Q101 |
на замовлення 839042 шт: термін постачання 21-31 дні (днів) |
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BCR583 | Infineon Technologies |
![]() Packaging: Bulk |
на замовлення 954990 шт: термін постачання 21-31 дні (днів) |
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BSS123IXTSA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 190mA (Ta) Rds On (Max) @ Id, Vgs: 6Ohm @ 190mA, 10V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1.8V @ 13µA Supplier Device Package: PG-SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 0.63 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 15 pF @ 50 V |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
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BSS123IXTSA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 190mA (Ta) Rds On (Max) @ Id, Vgs: 6Ohm @ 190mA, 10V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1.8V @ 13µA Supplier Device Package: PG-SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 0.63 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 15 pF @ 50 V |
на замовлення 17420 шт: термін постачання 21-31 дні (днів) |
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T880N14TOFXPSA1 | Infineon Technologies |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TLE94108ESXUMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Features: Charge Pump Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad Mounting Type: Surface Mount Interface: Logic, PWM, SPI Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Half Bridge (8) Voltage - Supply: 3V ~ 5.5V Rds On (Typ): 1.3Ohm LS, 1.3Ohm HS Applications: DC Motors, General Purpose Voltage - Load: 5.5V ~ 20V Supplier Device Package: PG-TSDSO-24 Fault Protection: Current Limiting, Over Temperature, Short Circuit Load Type: Inductive, Resistive Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TLE94108ESXUMA1 | Infineon Technologies |
![]() Features: Charge Pump Packaging: Cut Tape (CT) Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad Mounting Type: Surface Mount Interface: Logic, PWM, SPI Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Half Bridge (8) Voltage - Supply: 3V ~ 5.5V Rds On (Typ): 1.3Ohm LS, 1.3Ohm HS Applications: DC Motors, General Purpose Voltage - Load: 5.5V ~ 20V Supplier Device Package: PG-TSDSO-24 Fault Protection: Current Limiting, Over Temperature, Short Circuit Load Type: Inductive, Resistive Part Status: Active |
на замовлення 2551 шт: термін постачання 21-31 дні (днів) |
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IAUC41N06S5L100ATMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 41A (Tj) Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V Power Dissipation (Max): 42W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 13µA Supplier Device Package: PG-TDSON-8-33 Part Status: Active Vgs (Max): ±16V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 16.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1205 pF @ 30 V |
на замовлення 24557 шт: термін постачання 21-31 дні (днів) |
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BCW61E6384HTMA1 | Infineon Technologies |
![]() Packaging: Bulk Part Status: Last Time Buy |
на замовлення 690000 шт: термін постачання 21-31 дні (днів) |
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MB89485-G-218-CHIP-CN | Infineon Technologies |
Description: IC MCU 8BIT 16KB MROM Packaging: Tray Speed: 12.5MHz Program Memory Size: 16KB (16K x 8) RAM Size: 512 x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: External Program Memory Type: Mask ROM Core Processor: F²MC-8L Data Converters: A/D 4x10b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 2.2V ~ 5.5V Connectivity: Serial I/O, UART/USART Peripherals: LCD, POR, PWM, WDT Part Status: Obsolete Number of I/O: 39 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
MB89983L-G-218-CHIP | Infineon Technologies |
Description: IC MCU 8BIT 8KB MROM Packaging: Tray Speed: 4.2MHz Program Memory Size: 8KB (8K x 8) RAM Size: 256 x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: External Program Memory Type: Mask ROM Core Processor: F²MC-8L Data Converters: A/D 4x8b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 2.2V ~ 6V Peripherals: LCD, POR, PWM, WDT Part Status: Obsolete Number of I/O: 47 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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BAT5404WH6327XTSA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 5 ns Technology: Schottky Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 200mA (DC) Supplier Device Package: PG-SOT323 Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA Current - Reverse Leakage @ Vr: 2 µA @ 25 V |
на замовлення 60450 шт: термін постачання 21-31 дні (днів) |
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BAT5402LRHE6327XTSA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: SOD-882 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 5 ns Technology: Schottky Capacitance @ Vr, F: 10pF @ 1V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: PG-TSLP-2-7 Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA Current - Reverse Leakage @ Vr: 2 µA @ 25 V |
на замовлення 8935 шт: термін постачання 21-31 дні (днів) |
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FD500R65KE3KNOSA1 | Infineon Technologies |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BAR6702VH6327XTSA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: SC-79, SOD-523 Diode Type: PIN - Single Operating Temperature: 150°C (TJ) Capacitance @ Vr, F: 0.55pF @ 5V, 1MHz Resistance @ If, F: 1Ohm @ 10mA, 100MHz Voltage - Peak Reverse (Max): 150V Supplier Device Package: PG-SC79-2 Part Status: Active Current - Max: 200 mA Power Dissipation (Max): 250 mW |
на замовлення 11687 шт: термін постачання 21-31 дні (днів) |
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BAR65-03WE6327 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: SC-76, SOD-323 Diode Type: PIN - Single Operating Temperature: 150°C (TJ) Capacitance @ Vr, F: 0.8pF @ 3V, 1MHz Resistance @ If, F: 900mOhm @ 10mA, 100MHz Voltage - Peak Reverse (Max): 30V Supplier Device Package: PG-SOD323-2-1 Part Status: Active Current - Max: 100 mA Power Dissipation (Max): 250 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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CY24212KSXC-5 | Infineon Technologies |
Description: IC CLOCK GEN MPEG 8-SOIC Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Frequency - Max: 27.027MHz Type: Clock Generator Voltage - Supply: 3.135V ~ 3.465V Supplier Device Package: 8-SOIC DigiKey Programmable: Not Verified |
на замовлення 6034 шт: термін постачання 21-31 дні (днів) |
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SPD03N50C3ATMA1 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 10V Power Dissipation (Max): 38W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 135µA Supplier Device Package: PG-TO252-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V |
на замовлення 14975 шт: термін постачання 21-31 дні (днів) |
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SIPC03N50C3X1SA1 | Infineon Technologies | Description: TRANSISTOR N-CH |
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SPD03N50C3BTMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 10V Power Dissipation (Max): 38W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 135µA Supplier Device Package: PG-TO252-3-11 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 560 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TDA16822XK | Infineon Technologies |
![]() Packaging: Tube Package / Case: 8-DIP (0.300", 7.62mm) Mounting Type: Through Hole Operating Temperature: -25°C ~ 130°C (TJ) Duty Cycle: 72% Frequency - Switching: 100kHz Internal Switch(s): Yes Voltage - Breakdown: 650V Output Isolation: Isolated Topology: Flyback Voltage - Supply (Vcc/Vdd): 9V ~ 17V Supplier Device Package: PG-DIP-8 Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage Voltage - Start Up: 14 V Control Features: Soft Start Part Status: Discontinued at Digi-Key Power (Watts): 20 W |
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В кошику од. на суму грн. | ||||||||||||||
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TC1766192F80HLBDKXUMA2 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 176-LQFP Mounting Type: Surface Mount Speed: 80MHz Program Memory Size: 1.5MB (1.5M x 8) RAM Size: 108K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: External Program Memory Type: FLASH Core Processor: TriCore™ Data Converters: A/D 2x10b, 32x12b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 1.42V ~ 1.58V Connectivity: ASC, CANbus, MLI, MSC, SSC Peripherals: DMA, POR, WDT Supplier Device Package: PG-LQFP-176-5 Part Status: Obsolete Number of I/O: 81 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BTS426L1E3062ABUMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Features: Auto Restart Package / Case: TO-263-5, D2PAK (4 Leads + Tab), TO-263BB Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: High Side Rds On (Typ): 50mOhm Input Type: Non-Inverting Voltage - Load: 5V ~ 34V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 5.8A Ratio - Input:Output: 1:1 Supplier Device Package: PG-TO263-5-2 Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, UVLO Part Status: Not For New Designs |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IPTG011N08NM5ATMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerSMD, Gull Wing Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 408A (Tc) Rds On (Max) @ Id, Vgs: 1.1mOhm @ 150A, 10V Power Dissipation (Max): 3.8W (Ta), 375W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 280µA Supplier Device Package: PG-HSOG-8-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 223 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 17000 pF @ 40 V |
на замовлення 1800 шт: термін постачання 21-31 дні (днів) |
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IPTG011N08NM5ATMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerSMD, Gull Wing Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 408A (Tc) Rds On (Max) @ Id, Vgs: 1.1mOhm @ 150A, 10V Power Dissipation (Max): 3.8W (Ta), 375W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 280µA Supplier Device Package: PG-HSOG-8-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 223 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 17000 pF @ 40 V |
на замовлення 1950 шт: термін постачання 21-31 дні (днів) |
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1ED3124MU12HXUMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Current - Peak Output: 14A Technology: Magnetic Coupling Current - Output High, Low: 5.5A, 5.5A Voltage - Isolation: 1200Vrms Approval Agency: UL Supplier Device Package: PG-DSO-8-66 Rise / Fall Time (Typ): 15ns, 15ns Common Mode Transient Immunity (Min): 200kV/µs Part Status: Active Number of Channels: 1 Voltage - Output Supply: 10V ~ 35V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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1ED3124MU12HXUMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Current - Peak Output: 14A Technology: Magnetic Coupling Current - Output High, Low: 5.5A, 5.5A Voltage - Isolation: 1200Vrms Approval Agency: UL Supplier Device Package: PG-DSO-8-66 Rise / Fall Time (Typ): 15ns, 15ns Common Mode Transient Immunity (Min): 200kV/µs Part Status: Active Number of Channels: 1 Voltage - Output Supply: 10V ~ 35V |
на замовлення 1283 шт: термін постачання 21-31 дні (днів) |
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1ED3491MU12MXUMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 16-BSSOP (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Current - Peak Output: 9A Technology: Magnetic Coupling Approval Agency: UL, VDE Supplier Device Package: PG-DSO-16-28 Rise / Fall Time (Typ): 15ns, 15ns Part Status: Active Number of Channels: 1 Voltage - Output Supply: 13V ~ 25V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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1ED3491MU12MXUMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 16-BSSOP (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Current - Peak Output: 9A Technology: Magnetic Coupling Approval Agency: UL, VDE Supplier Device Package: PG-DSO-16-28 Rise / Fall Time (Typ): 15ns, 15ns Part Status: Active Number of Channels: 1 Voltage - Output Supply: 13V ~ 25V |
на замовлення 1110 шт: термін постачання 21-31 дні (днів) |
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IDD05SG60CXTMA2 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 110pF @ 1V, 1MHz Current - Average Rectified (Io): 5A Supplier Device Package: PG-TO252-3 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Last Time Buy Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 5 A Current - Reverse Leakage @ Vr: 30 µA @ 600 V |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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BTS5434G | Infineon Technologies |
![]() Features: Slew Rate Controlled Packaging: Bulk Package / Case: 28-SOIC (0.295", 7.50mm Width) Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 4 Interface: Logic Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: High Side Rds On (Typ): 45mOhm Input Type: Non-Inverting Voltage - Load: 4.5V ~ 28V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 3.4A Ratio - Input:Output: 1:1 Supplier Device Package: PG-DSO-28 Fault Protection: Current Limiting (Adjustable), Over Load, Over Temperature, Reverse Battery, Reverse Current, UVLO |
на замовлення 52000 шт: термін постачання 21-31 дні (днів) |
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IPI60R380C6 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc) Rds On (Max) @ Id, Vgs: 380mOhm @ 3.8A, 10V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 320µA Supplier Device Package: PG-TO262-3-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
IPP60R380C6 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc) Rds On (Max) @ Id, Vgs: 380mOhm @ 3.8A, 10V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 320µA Supplier Device Package: PG-TO220-3-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
PX7510LWAFERX6SA1 | Infineon Technologies | Description: IC CONTROLLER |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
SIPC06S2N06LATX2LA1 | Infineon Technologies | Description: TRANSISTOR N-CH |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
SIPC10S2N06LX2LA1 | Infineon Technologies | Description: TRANSISTOR N-CH |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
SIPC20S2N06LX6SA1 | Infineon Technologies | Description: MOSFET N-CH TO263 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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BSS138IXTSA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 230mA (Ta) Rds On (Max) @ Id, Vgs: 3.5Ohm @ 230mA, 10V Power Dissipation (Max): 360mW (Ta) Vgs(th) (Max) @ Id: 1.4V @ 26µA Supplier Device Package: PG-SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 25 V |
на замовлення 51000 шт: термін постачання 21-31 дні (днів) |
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BSS138IXTSA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 230mA (Ta) Rds On (Max) @ Id, Vgs: 3.5Ohm @ 230mA, 10V Power Dissipation (Max): 360mW (Ta) Vgs(th) (Max) @ Id: 1.4V @ 26µA Supplier Device Package: PG-SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 25 V |
на замовлення 52868 шт: термін постачання 21-31 дні (днів) |
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BC846UE6327 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Transistor Type: 2 NPN (Dual) Operating Temperature: 150°C (TJ) Power - Max: 250mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 65V Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Frequency - Transition: 250MHz Supplier Device Package: PG-SC74-6-1 Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BC846UE6327HTSA1 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: SC-74, SOT-457 Mounting Type: Surface Mount Transistor Type: 2 NPN (Dual) Operating Temperature: 150°C (TJ) Power - Max: 250mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 65V Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Frequency - Transition: 250MHz Supplier Device Package: PG-SC74-6 |
на замовлення 49736 шт: термін постачання 21-31 дні (днів) |
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SP370231560XTMA2 | Infineon Technologies | Description: TPMS |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SP370231560XTMA1 | Infineon Technologies |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SPD02N50C3BTMA1 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc) Rds On (Max) @ Id, Vgs: 3Ohm @ 1.1A, 10V Power Dissipation (Max): 25W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 80µA Supplier Device Package: PG-TO252-3-311 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 190 pF @ 25 V |
на замовлення 124268 шт: термін постачання 21-31 дні (днів) |
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IPTC019N10NM5ATMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 16-PowerSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 279A (Tc) Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V Power Dissipation (Max): 3.8W (Ta), 300W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 210µA Supplier Device Package: PG-HDSOP-16-2 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 50 V |
на замовлення 1800 шт: термін постачання 21-31 дні (днів) |
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ETD630N18P60HPSA1 |
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Виробник: Infineon Technologies
Description: 60 MM THYRISTOR/DIODE MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 135°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 16800A, 20000A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 628 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Active
Current - On State (It (RMS)) (Max): 700 A
Voltage - Off State: 1.8 kV
Description: 60 MM THYRISTOR/DIODE MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 135°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 16800A, 20000A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 628 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Active
Current - On State (It (RMS)) (Max): 700 A
Voltage - Off State: 1.8 kV
на замовлення 4 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 18022.14 грн |
ETT630N18P60HPSA1 |
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Виробник: Infineon Technologies
Description: 60 MM THYRISTOR/THYRISTOR MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 135°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 16800A, 20000A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 628 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Active
Current - On State (It (RMS)) (Max): 700 A
Voltage - Off State: 1.8 kV
Description: 60 MM THYRISTOR/THYRISTOR MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 135°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 16800A, 20000A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 628 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Active
Current - On State (It (RMS)) (Max): 700 A
Voltage - Off State: 1.8 kV
на замовлення 2 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 18527.85 грн |
TLE4941CNBAMA1 |
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Виробник: Infineon Technologies
Description: MAGNETIC SWITCH HALL EFFECT SENS
Description: MAGNETIC SWITCH HALL EFFECT SENS
товару немає в наявності
В кошику
од. на суму грн.
TLE4941CN |
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Виробник: Infineon Technologies
Description: MAGNETIC SWITCH HALL EFFECT SENS
Packaging: Bulk
Package / Case: 2-SIP, SSO-2-53
Output Type: Current Source
Polarization: North Pole, South Pole
Mounting Type: Through Hole
Function: Special Purpose
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 20V
Technology: Hall Effect
Current - Supply (Max): 16.8mA
Supplier Device Package: PG-SSO-2-53
Part Status: Active
Description: MAGNETIC SWITCH HALL EFFECT SENS
Packaging: Bulk
Package / Case: 2-SIP, SSO-2-53
Output Type: Current Source
Polarization: North Pole, South Pole
Mounting Type: Through Hole
Function: Special Purpose
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 20V
Technology: Hall Effect
Current - Supply (Max): 16.8mA
Supplier Device Package: PG-SSO-2-53
Part Status: Active
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
212+ | 112.73 грн |
BAW56E6433 |
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Виробник: Infineon Technologies
Description: DIODE ARRAY GP 80V 200MA PGSOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 150 nA @ 70 V
Description: DIODE ARRAY GP 80V 200MA PGSOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 150 nA @ 70 V
на замовлення 96828 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
13172+ | 1.46 грн |
TLE4476DATMA1 |
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Виробник: Infineon Technologies
Description: IC REG LINEAR 3.3V/5V TO252-5-11
Packaging: Tape & Reel (TR)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 350mA, 430mA
Operating Temperature: -40°C ~ 170°C
Output Configuration: Positive
Current - Quiescent (Iq): 150 µA
Voltage - Input (Max): 42V
Number of Regulators: 2
Supplier Device Package: PG-TO252-5-11
Voltage - Output (Min/Fixed): 3.3V, 5V
Control Features: Enable
Part Status: Active
PSRR: 60dB (20Hz ~ 20kHz), 60dB (20Hz ~ 20kHz)
Voltage Dropout (Max): -, 0.7V @ 330mA
Protection Features: Over Current, Over Temperature, Over Voltage, Reverse Polarity, Short Circuit
Current - Supply (Max): 13 mA
Grade: Automotive
Qualification: AEC-Q100
Description: IC REG LINEAR 3.3V/5V TO252-5-11
Packaging: Tape & Reel (TR)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 350mA, 430mA
Operating Temperature: -40°C ~ 170°C
Output Configuration: Positive
Current - Quiescent (Iq): 150 µA
Voltage - Input (Max): 42V
Number of Regulators: 2
Supplier Device Package: PG-TO252-5-11
Voltage - Output (Min/Fixed): 3.3V, 5V
Control Features: Enable
Part Status: Active
PSRR: 60dB (20Hz ~ 20kHz), 60dB (20Hz ~ 20kHz)
Voltage Dropout (Max): -, 0.7V @ 330mA
Protection Features: Over Current, Over Temperature, Over Voltage, Reverse Polarity, Short Circuit
Current - Supply (Max): 13 mA
Grade: Automotive
Qualification: AEC-Q100
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2500+ | 100.92 грн |
5000+ | 95.22 грн |
BSC019N04NSG |
Виробник: Infineon Technologies
Description: BSC019N04 - 12V-300V N-CHANNEL P
Description: BSC019N04 - 12V-300V N-CHANNEL P
товару немає в наявності
В кошику
од. на суму грн.
IDB06S60CATMA2 |
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Виробник: Infineon Technologies
Description: DIODE SIL CARB 600V 6A TO263-3-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 280pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: PG-TO263-3-2
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Current - Reverse Leakage @ Vr: 80 µA @ 600 V
Description: DIODE SIL CARB 600V 6A TO263-3-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 280pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: PG-TO263-3-2
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Current - Reverse Leakage @ Vr: 80 µA @ 600 V
товару немає в наявності
В кошику
од. на суму грн.
SFH 757V |
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Виробник: Infineon Technologies
Description: TRANSMITTER DIODE FIBER OPTIC
Description: TRANSMITTER DIODE FIBER OPTIC
товару немає в наявності
В кошику
од. на суму грн.
IPW60R041C6 |
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Виробник: Infineon Technologies
Description: 600V, 0.041OHM, N-CHANNEL MOSFET
Description: 600V, 0.041OHM, N-CHANNEL MOSFET
товару немає в наявності
В кошику
од. на суму грн.
IPW65R045C7 |
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Виробник: Infineon Technologies
Description: 46A, 650V, 0.045OHM, N-CHANNEL M
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 24.9A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.25mA
Supplier Device Package: PG-TO247-3-41
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4340 pF @ 400 V
Description: 46A, 650V, 0.045OHM, N-CHANNEL M
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 24.9A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.25mA
Supplier Device Package: PG-TO247-3-41
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4340 pF @ 400 V
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BSS139IXTSA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 250V 100MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 14Ohm @ 100mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 56µA
Supplier Device Package: PG-SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 2.3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V
Description: MOSFET N-CH 250V 100MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 14Ohm @ 100mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 56µA
Supplier Device Package: PG-SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 2.3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V
на замовлення 36000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 5.90 грн |
6000+ | 5.25 грн |
9000+ | 4.82 грн |
15000+ | 4.40 грн |
21000+ | 4.39 грн |
BSS139IXTSA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 250V 100MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 14Ohm @ 100mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 56µA
Supplier Device Package: PG-SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 2.3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V
Description: MOSFET N-CH 250V 100MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 14Ohm @ 100mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 56µA
Supplier Device Package: PG-SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 2.3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V
на замовлення 36349 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
11+ | 30.17 грн |
19+ | 16.82 грн |
100+ | 8.56 грн |
500+ | 8.00 грн |
1000+ | 6.72 грн |
IRF6217TRPBF-1 |
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Виробник: Infineon Technologies
Description: MOSFET P-CH 150V 700MA 8SO
Description: MOSFET P-CH 150V 700MA 8SO
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XC2268N40F80LABKXUMA1 |
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Виробник: Infineon Technologies
Description: IC MCU 16/32B 320KB FLSH 100LQFP
Description: IC MCU 16/32B 320KB FLSH 100LQFP
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BCR583E6327 |
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Виробник: Infineon Technologies
Description: TRANS PREBIAS PNP 50V SOT23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V
Supplier Device Package: PG-SOT23-3-1
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 330 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS PREBIAS PNP 50V SOT23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V
Supplier Device Package: PG-SOT23-3-1
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 330 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Grade: Automotive
Qualification: AEC-Q101
на замовлення 839042 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
4418+ | 5.07 грн |
BCR583 |
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на замовлення 954990 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
4418+ | 5.07 грн |
BSS123IXTSA1 |
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Виробник: Infineon Technologies
Description: SMALL SIGNAL MOSFETS PG-SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 190mA (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 190mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 13µA
Supplier Device Package: PG-SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 0.63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15 pF @ 50 V
Description: SMALL SIGNAL MOSFETS PG-SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 190mA (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 190mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 13µA
Supplier Device Package: PG-SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 0.63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15 pF @ 50 V
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 2.69 грн |
6000+ | 2.37 грн |
9000+ | 2.16 грн |
15000+ | 2.02 грн |
BSS123IXTSA1 |
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Виробник: Infineon Technologies
Description: SMALL SIGNAL MOSFETS PG-SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 190mA (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 190mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 13µA
Supplier Device Package: PG-SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 0.63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15 pF @ 50 V
Description: SMALL SIGNAL MOSFETS PG-SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 190mA (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 190mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 13µA
Supplier Device Package: PG-SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 0.63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15 pF @ 50 V
на замовлення 17420 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
20+ | 15.88 грн |
32+ | 9.79 грн |
100+ | 3.95 грн |
T880N14TOFXPSA1 |
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Виробник: Infineon Technologies
Description: SCR MODULE 1800V 1.75A DO200AB
Description: SCR MODULE 1800V 1.75A DO200AB
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TLE94108ESXUMA1 |
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Виробник: Infineon Technologies
Description: IC HALF BRIDGE DRIVER 24TSDSO
Packaging: Tape & Reel (TR)
Features: Charge Pump
Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Interface: Logic, PWM, SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (8)
Voltage - Supply: 3V ~ 5.5V
Rds On (Typ): 1.3Ohm LS, 1.3Ohm HS
Applications: DC Motors, General Purpose
Voltage - Load: 5.5V ~ 20V
Supplier Device Package: PG-TSDSO-24
Fault Protection: Current Limiting, Over Temperature, Short Circuit
Load Type: Inductive, Resistive
Part Status: Active
Description: IC HALF BRIDGE DRIVER 24TSDSO
Packaging: Tape & Reel (TR)
Features: Charge Pump
Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Interface: Logic, PWM, SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (8)
Voltage - Supply: 3V ~ 5.5V
Rds On (Typ): 1.3Ohm LS, 1.3Ohm HS
Applications: DC Motors, General Purpose
Voltage - Load: 5.5V ~ 20V
Supplier Device Package: PG-TSDSO-24
Fault Protection: Current Limiting, Over Temperature, Short Circuit
Load Type: Inductive, Resistive
Part Status: Active
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TLE94108ESXUMA1 |
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Виробник: Infineon Technologies
Description: IC HALF BRIDGE DRIVER 24TSDSO
Features: Charge Pump
Packaging: Cut Tape (CT)
Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Interface: Logic, PWM, SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (8)
Voltage - Supply: 3V ~ 5.5V
Rds On (Typ): 1.3Ohm LS, 1.3Ohm HS
Applications: DC Motors, General Purpose
Voltage - Load: 5.5V ~ 20V
Supplier Device Package: PG-TSDSO-24
Fault Protection: Current Limiting, Over Temperature, Short Circuit
Load Type: Inductive, Resistive
Part Status: Active
Description: IC HALF BRIDGE DRIVER 24TSDSO
Features: Charge Pump
Packaging: Cut Tape (CT)
Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Interface: Logic, PWM, SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (8)
Voltage - Supply: 3V ~ 5.5V
Rds On (Typ): 1.3Ohm LS, 1.3Ohm HS
Applications: DC Motors, General Purpose
Voltage - Load: 5.5V ~ 20V
Supplier Device Package: PG-TSDSO-24
Fault Protection: Current Limiting, Over Temperature, Short Circuit
Load Type: Inductive, Resistive
Part Status: Active
на замовлення 2551 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 204.03 грн |
10+ | 146.78 грн |
25+ | 134.31 грн |
100+ | 113.17 грн |
250+ | 107.04 грн |
500+ | 103.34 грн |
1000+ | 98.65 грн |
IAUC41N06S5L100ATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 41A TDSON-8-33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Tj)
Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 13µA
Supplier Device Package: PG-TDSON-8-33
Part Status: Active
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 16.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1205 pF @ 30 V
Description: MOSFET N-CH 60V 41A TDSON-8-33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Tj)
Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 13µA
Supplier Device Package: PG-TDSON-8-33
Part Status: Active
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 16.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1205 pF @ 30 V
на замовлення 24557 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
4+ | 96.06 грн |
10+ | 58.10 грн |
100+ | 38.37 грн |
500+ | 28.06 грн |
1000+ | 25.50 грн |
2000+ | 23.35 грн |
BCW61E6384HTMA1 |
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Виробник: Infineon Technologies
Description: TRANSISTOR AF SOT23
Packaging: Bulk
Part Status: Last Time Buy
Description: TRANSISTOR AF SOT23
Packaging: Bulk
Part Status: Last Time Buy
на замовлення 690000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
10764+ | 2.20 грн |
MB89485-G-218-CHIP-CN |
Виробник: Infineon Technologies
Description: IC MCU 8BIT 16KB MROM
Packaging: Tray
Speed: 12.5MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: F²MC-8L
Data Converters: A/D 4x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.2V ~ 5.5V
Connectivity: Serial I/O, UART/USART
Peripherals: LCD, POR, PWM, WDT
Part Status: Obsolete
Number of I/O: 39
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 16KB MROM
Packaging: Tray
Speed: 12.5MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: F²MC-8L
Data Converters: A/D 4x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.2V ~ 5.5V
Connectivity: Serial I/O, UART/USART
Peripherals: LCD, POR, PWM, WDT
Part Status: Obsolete
Number of I/O: 39
DigiKey Programmable: Not Verified
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MB89983L-G-218-CHIP |
Виробник: Infineon Technologies
Description: IC MCU 8BIT 8KB MROM
Packaging: Tray
Speed: 4.2MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: F²MC-8L
Data Converters: A/D 4x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.2V ~ 6V
Peripherals: LCD, POR, PWM, WDT
Part Status: Obsolete
Number of I/O: 47
Description: IC MCU 8BIT 8KB MROM
Packaging: Tray
Speed: 4.2MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: F²MC-8L
Data Converters: A/D 4x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.2V ~ 6V
Peripherals: LCD, POR, PWM, WDT
Part Status: Obsolete
Number of I/O: 47
товару немає в наявності
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BAT5404WH6327XTSA1 |
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Виробник: Infineon Technologies
Description: DIODE ARR SCHOT 30V 200MA SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: PG-SOT323
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Description: DIODE ARR SCHOT 30V 200MA SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: PG-SOT323
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
на замовлення 60450 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
14+ | 23.82 грн |
23+ | 13.84 грн |
100+ | 8.63 грн |
500+ | 5.99 грн |
1000+ | 5.30 грн |
BAT5402LRHE6327XTSA1 |
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Виробник: Infineon Technologies
Description: DIODE SCHOTT 30V 200MA TSLP-2-7
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: PG-TSLP-2-7
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Description: DIODE SCHOTT 30V 200MA TSLP-2-7
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: PG-TSLP-2-7
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
на замовлення 8935 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
10+ | 33.34 грн |
13+ | 24.92 грн |
100+ | 14.95 грн |
500+ | 13.00 грн |
1000+ | 8.84 грн |
2000+ | 8.14 грн |
5000+ | 7.67 грн |
FD500R65KE3KNOSA1 |
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Виробник: Infineon Technologies
Description: IGBT MOD 6500V 500A 9600W
Description: IGBT MOD 6500V 500A 9600W
товару немає в наявності
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BAR6702VH6327XTSA1 |
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Виробник: Infineon Technologies
Description: RF DIODE PIN 150V 250MW SC79-2
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.55pF @ 5V, 1MHz
Resistance @ If, F: 1Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 150V
Supplier Device Package: PG-SC79-2
Part Status: Active
Current - Max: 200 mA
Power Dissipation (Max): 250 mW
Description: RF DIODE PIN 150V 250MW SC79-2
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.55pF @ 5V, 1MHz
Resistance @ If, F: 1Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 150V
Supplier Device Package: PG-SC79-2
Part Status: Active
Current - Max: 200 mA
Power Dissipation (Max): 250 mW
на замовлення 11687 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
16+ | 20.64 грн |
23+ | 13.30 грн |
27+ | 11.74 грн |
100+ | 9.46 грн |
250+ | 8.71 грн |
500+ | 8.25 грн |
1000+ | 7.75 грн |
BAR65-03WE6327 |
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Виробник: Infineon Technologies
Description: BAR65 - PIN DIODE
Packaging: Bulk
Package / Case: SC-76, SOD-323
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.8pF @ 3V, 1MHz
Resistance @ If, F: 900mOhm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 30V
Supplier Device Package: PG-SOD323-2-1
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
Description: BAR65 - PIN DIODE
Packaging: Bulk
Package / Case: SC-76, SOD-323
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.8pF @ 3V, 1MHz
Resistance @ If, F: 900mOhm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 30V
Supplier Device Package: PG-SOD323-2-1
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
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CY24212KSXC-5 |
Виробник: Infineon Technologies
Description: IC CLOCK GEN MPEG 8-SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Frequency - Max: 27.027MHz
Type: Clock Generator
Voltage - Supply: 3.135V ~ 3.465V
Supplier Device Package: 8-SOIC
DigiKey Programmable: Not Verified
Description: IC CLOCK GEN MPEG 8-SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Frequency - Max: 27.027MHz
Type: Clock Generator
Voltage - Supply: 3.135V ~ 3.465V
Supplier Device Package: 8-SOIC
DigiKey Programmable: Not Verified
на замовлення 6034 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
193+ | 117.88 грн |
SPD03N50C3ATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 500V 3.2A TO252-3
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 135µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Description: MOSFET N-CH 500V 3.2A TO252-3
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 135µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
на замовлення 14975 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
469+ | 47.23 грн |
SIPC03N50C3X1SA1 |
Виробник: Infineon Technologies
Description: TRANSISTOR N-CH
Description: TRANSISTOR N-CH
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SPD03N50C3BTMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 560V 3.2A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 135µA
Supplier Device Package: PG-TO252-3-11
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 560 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Description: MOSFET N-CH 560V 3.2A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 135µA
Supplier Device Package: PG-TO252-3-11
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 560 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
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TDA16822XK |
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Виробник: Infineon Technologies
Description: IC OFFLINE SWITCH FLYBACK 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -25°C ~ 130°C (TJ)
Duty Cycle: 72%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 9V ~ 17V
Supplier Device Package: PG-DIP-8
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 14 V
Control Features: Soft Start
Part Status: Discontinued at Digi-Key
Power (Watts): 20 W
Description: IC OFFLINE SWITCH FLYBACK 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -25°C ~ 130°C (TJ)
Duty Cycle: 72%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 9V ~ 17V
Supplier Device Package: PG-DIP-8
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 14 V
Control Features: Soft Start
Part Status: Discontinued at Digi-Key
Power (Watts): 20 W
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TC1766192F80HLBDKXUMA2 |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 1.5MB FLASH 176LQFP
Packaging: Tape & Reel (TR)
Package / Case: 176-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 1.5MB (1.5M x 8)
RAM Size: 108K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: TriCore™
Data Converters: A/D 2x10b, 32x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.42V ~ 1.58V
Connectivity: ASC, CANbus, MLI, MSC, SSC
Peripherals: DMA, POR, WDT
Supplier Device Package: PG-LQFP-176-5
Part Status: Obsolete
Number of I/O: 81
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 1.5MB FLASH 176LQFP
Packaging: Tape & Reel (TR)
Package / Case: 176-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 1.5MB (1.5M x 8)
RAM Size: 108K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: TriCore™
Data Converters: A/D 2x10b, 32x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.42V ~ 1.58V
Connectivity: ASC, CANbus, MLI, MSC, SSC
Peripherals: DMA, POR, WDT
Supplier Device Package: PG-LQFP-176-5
Part Status: Obsolete
Number of I/O: 81
DigiKey Programmable: Not Verified
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BTS426L1E3062ABUMA1 |
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Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 TO263-5
Packaging: Tape & Reel (TR)
Features: Auto Restart
Package / Case: TO-263-5, D2PAK (4 Leads + Tab), TO-263BB
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 50mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 34V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 5.8A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO263-5-2
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, UVLO
Part Status: Not For New Designs
Description: IC PWR SWITCH N-CHAN 1:1 TO263-5
Packaging: Tape & Reel (TR)
Features: Auto Restart
Package / Case: TO-263-5, D2PAK (4 Leads + Tab), TO-263BB
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 50mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 34V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 5.8A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO263-5-2
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, UVLO
Part Status: Not For New Designs
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IPTG011N08NM5ATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 80V 42A/408A HSOG-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 408A (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 150A, 10V
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 280µA
Supplier Device Package: PG-HSOG-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 223 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17000 pF @ 40 V
Description: MOSFET N-CH 80V 42A/408A HSOG-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 408A (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 150A, 10V
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 280µA
Supplier Device Package: PG-HSOG-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 223 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17000 pF @ 40 V
на замовлення 1800 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1800+ | 269.33 грн |
IPTG011N08NM5ATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 80V 42A/408A HSOG-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 408A (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 150A, 10V
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 280µA
Supplier Device Package: PG-HSOG-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 223 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17000 pF @ 40 V
Description: MOSFET N-CH 80V 42A/408A HSOG-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 408A (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 150A, 10V
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 280µA
Supplier Device Package: PG-HSOG-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 223 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17000 pF @ 40 V
на замовлення 1950 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 546.20 грн |
10+ | 401.74 грн |
100+ | 317.45 грн |
1ED3124MU12HXUMA1 |
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Виробник: Infineon Technologies
Description: DGT ISO 1.2KV 1CH GT DVR DSO8-66
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 14A
Technology: Magnetic Coupling
Current - Output High, Low: 5.5A, 5.5A
Voltage - Isolation: 1200Vrms
Approval Agency: UL
Supplier Device Package: PG-DSO-8-66
Rise / Fall Time (Typ): 15ns, 15ns
Common Mode Transient Immunity (Min): 200kV/µs
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 10V ~ 35V
Description: DGT ISO 1.2KV 1CH GT DVR DSO8-66
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 14A
Technology: Magnetic Coupling
Current - Output High, Low: 5.5A, 5.5A
Voltage - Isolation: 1200Vrms
Approval Agency: UL
Supplier Device Package: PG-DSO-8-66
Rise / Fall Time (Typ): 15ns, 15ns
Common Mode Transient Immunity (Min): 200kV/µs
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 10V ~ 35V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1000+ | 124.81 грн |
1ED3124MU12HXUMA1 |
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Виробник: Infineon Technologies
Description: DGT ISO 1.2KV 1CH GT DVR DSO8-66
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 14A
Technology: Magnetic Coupling
Current - Output High, Low: 5.5A, 5.5A
Voltage - Isolation: 1200Vrms
Approval Agency: UL
Supplier Device Package: PG-DSO-8-66
Rise / Fall Time (Typ): 15ns, 15ns
Common Mode Transient Immunity (Min): 200kV/µs
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 10V ~ 35V
Description: DGT ISO 1.2KV 1CH GT DVR DSO8-66
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 14A
Technology: Magnetic Coupling
Current - Output High, Low: 5.5A, 5.5A
Voltage - Isolation: 1200Vrms
Approval Agency: UL
Supplier Device Package: PG-DSO-8-66
Rise / Fall Time (Typ): 15ns, 15ns
Common Mode Transient Immunity (Min): 200kV/µs
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 10V ~ 35V
на замовлення 1283 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 227.85 грн |
10+ | 164.14 грн |
25+ | 150.39 грн |
100+ | 126.98 грн |
250+ | 120.22 грн |
500+ | 116.15 грн |
1ED3491MU12MXUMA1 |
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Виробник: Infineon Technologies
Description: DIGITAL ISO 1CH GT DVR DSO16-28
Packaging: Tape & Reel (TR)
Package / Case: 16-BSSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 9A
Technology: Magnetic Coupling
Approval Agency: UL, VDE
Supplier Device Package: PG-DSO-16-28
Rise / Fall Time (Typ): 15ns, 15ns
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 13V ~ 25V
Description: DIGITAL ISO 1CH GT DVR DSO16-28
Packaging: Tape & Reel (TR)
Package / Case: 16-BSSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 9A
Technology: Magnetic Coupling
Approval Agency: UL, VDE
Supplier Device Package: PG-DSO-16-28
Rise / Fall Time (Typ): 15ns, 15ns
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 13V ~ 25V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1000+ | 231.59 грн |
1ED3491MU12MXUMA1 |
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Виробник: Infineon Technologies
Description: DIGITAL ISO 1CH GT DVR DSO16-28
Packaging: Cut Tape (CT)
Package / Case: 16-BSSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 9A
Technology: Magnetic Coupling
Approval Agency: UL, VDE
Supplier Device Package: PG-DSO-16-28
Rise / Fall Time (Typ): 15ns, 15ns
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 13V ~ 25V
Description: DIGITAL ISO 1CH GT DVR DSO16-28
Packaging: Cut Tape (CT)
Package / Case: 16-BSSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 9A
Technology: Magnetic Coupling
Approval Agency: UL, VDE
Supplier Device Package: PG-DSO-16-28
Rise / Fall Time (Typ): 15ns, 15ns
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 13V ~ 25V
на замовлення 1110 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 401.71 грн |
10+ | 295.93 грн |
25+ | 273.17 грн |
100+ | 232.83 грн |
250+ | 221.61 грн |
500+ | 214.85 грн |
IDD05SG60CXTMA2 |
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Виробник: Infineon Technologies
Description: DIODE SIL CARB 600V 5A PGTO2523
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 110pF @ 1V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: PG-TO252-3
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 5 A
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
Description: DIODE SIL CARB 600V 5A PGTO2523
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 110pF @ 1V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: PG-TO252-3
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 5 A
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2500+ | 74.41 грн |
BTS5434G |
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Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1
Features: Slew Rate Controlled
Packaging: Bulk
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 4
Interface: Logic
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 45mOhm
Input Type: Non-Inverting
Voltage - Load: 4.5V ~ 28V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3.4A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-28
Fault Protection: Current Limiting (Adjustable), Over Load, Over Temperature, Reverse Battery, Reverse Current, UVLO
Description: IC PWR SWITCH N-CHAN 1:1
Features: Slew Rate Controlled
Packaging: Bulk
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 4
Interface: Logic
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 45mOhm
Input Type: Non-Inverting
Voltage - Load: 4.5V ~ 28V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3.4A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-28
Fault Protection: Current Limiting (Adjustable), Over Load, Over Temperature, Reverse Battery, Reverse Current, UVLO
на замовлення 52000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
59+ | 389.98 грн |
IPI60R380C6 |
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Виробник: Infineon Technologies
Description: COOLMOS N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.8A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 320µA
Supplier Device Package: PG-TO262-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 100 V
Description: COOLMOS N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.8A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 320µA
Supplier Device Package: PG-TO262-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 100 V
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IPP60R380C6 |
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Виробник: Infineon Technologies
Description: POWER FIELD-EFFECT TRANSISTOR, 1
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.8A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 320µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 100 V
Description: POWER FIELD-EFFECT TRANSISTOR, 1
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.8A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 320µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 100 V
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PX7510LWAFERX6SA1 |
Виробник: Infineon Technologies
Description: IC CONTROLLER
Description: IC CONTROLLER
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SIPC06S2N06LATX2LA1 |
Виробник: Infineon Technologies
Description: TRANSISTOR N-CH
Description: TRANSISTOR N-CH
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SIPC10S2N06LX2LA1 |
Виробник: Infineon Technologies
Description: TRANSISTOR N-CH
Description: TRANSISTOR N-CH
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SIPC20S2N06LX6SA1 |
Виробник: Infineon Technologies
Description: MOSFET N-CH TO263
Description: MOSFET N-CH TO263
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BSS138IXTSA1 |
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Виробник: Infineon Technologies
Description: SMALL SIGNAL MOSFETS PG-SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 230mA (Ta)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 230mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 26µA
Supplier Device Package: PG-SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 25 V
Description: SMALL SIGNAL MOSFETS PG-SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 230mA (Ta)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 230mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 26µA
Supplier Device Package: PG-SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 25 V
на замовлення 51000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 3.69 грн |
6000+ | 3.12 грн |
9000+ | 2.81 грн |
15000+ | 2.49 грн |
21000+ | 2.45 грн |
30000+ | 2.25 грн |
BSS138IXTSA1 |
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Виробник: Infineon Technologies
Description: SMALL SIGNAL MOSFETS PG-SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 230mA (Ta)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 230mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 26µA
Supplier Device Package: PG-SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 25 V
Description: SMALL SIGNAL MOSFETS PG-SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 230mA (Ta)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 230mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 26µA
Supplier Device Package: PG-SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 25 V
на замовлення 52868 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
16+ | 20.64 грн |
22+ | 14.53 грн |
100+ | 9.15 грн |
500+ | 4.95 грн |
1000+ | 4.05 грн |
BC846UE6327 |
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Виробник: Infineon Technologies
Description: TRANS 2NPN 65V 100MA PG-SC74-6
Packaging: Bulk
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 65V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SC74-6-1
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS 2NPN 65V 100MA PG-SC74-6
Packaging: Bulk
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 65V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SC74-6-1
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
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BC846UE6327HTSA1 |
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Виробник: Infineon Technologies
Description: TRANS 2NPN 65V 100MA PG-SC74-6
Packaging: Bulk
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 65V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SC74-6
Description: TRANS 2NPN 65V 100MA PG-SC74-6
Packaging: Bulk
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 65V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SC74-6
на замовлення 49736 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3129+ | 7.57 грн |
SP370231560XTMA2 |
Виробник: Infineon Technologies
Description: TPMS
Description: TPMS
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SP370231560XTMA1 |
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Виробник: Infineon Technologies
Description: IC TIRE PRESSURE SENSOR DSOSP-14
Description: IC TIRE PRESSURE SENSOR DSOSP-14
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SPD02N50C3BTMA1 |
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Виробник: Infineon Technologies
Description: LOW POWER_LEGACY
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.1A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 80µA
Supplier Device Package: PG-TO252-3-311
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 190 pF @ 25 V
Description: LOW POWER_LEGACY
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.1A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 80µA
Supplier Device Package: PG-TO252-3-311
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 190 pF @ 25 V
на замовлення 124268 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
770+ | 29.47 грн |
IPTC019N10NM5ATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 31A/279A HDSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 279A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 210µA
Supplier Device Package: PG-HDSOP-16-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 50 V
Description: MOSFET N-CH 100V 31A/279A HDSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 279A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 210µA
Supplier Device Package: PG-HDSOP-16-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 50 V
на замовлення 1800 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1800+ | 206.68 грн |