Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (149796) > Сторінка 424 з 2497
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ICE5QR4770AZXKLA1 | Infineon Technologies |
Description: IC OFFLINE SWITCH FLYBACK 7DIPPackaging: Bulk Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads Mounting Type: Through Hole Operating Temperature: -40°C ~ 125°C (TJ) Internal Switch(s): Yes Voltage - Breakdown: 700V Output Isolation: Isolated Topology: Flyback Voltage - Supply (Vcc/Vdd): 10V ~ 27V Supplier Device Package: PG-DIP-7 Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage Voltage - Start Up: 16 V Part Status: Not For New Designs Power (Watts): 27 W |
на замовлення 5926 шт: термін постачання 21-31 дні (днів) |
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ICE5QR4770AGXUMA1 | Infineon Technologies |
Description: IC OFFLINE SWITCH FLYBACK 12DSOPackaging: Bulk Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TJ) Internal Switch(s): Yes Voltage - Breakdown: 700V Output Isolation: Isolated Topology: Flyback Voltage - Supply (Vcc/Vdd): 10V ~ 27V Supplier Device Package: PG-DSO-12-21 Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage Voltage - Start Up: 16 V Part Status: Not For New Designs Power (Watts): 27 W |
на замовлення 1046 шт: термін постачання 21-31 дні (днів) |
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ICE5QR2270AZ | Infineon Technologies |
Description: ICE5QR2270 - QUASI RESONANT COOLPackaging: Bulk Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Internal Switch(s): Yes Voltage - Breakdown: 700V Output Isolation: Isolated Topology: Flyback Voltage - Supply (Vcc/Vdd): 10V ~ 25.5V Supplier Device Package: PG-DIP-7 Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage Voltage - Start Up: 16 V Control Features: Frequency Control, Soft Start Part Status: Active Power (Watts): 41 W |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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PXDNGL01TOBO1 | Infineon Technologies |
Description: EVAL DONGLE Packaging: Bulk Type: License License - User Details: USB Dongle |
на замовлення 37 шт: термін постачання 21-31 дні (днів) |
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S27KL0641DABHA033 | Infineon Technologies |
Description: IC PSRAM 64MBIT PAR 24FBGAPackaging: Tape & Reel (TR) Package / Case: 24-VBGA Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: PSRAM (Pseudo SRAM) Clock Frequency: 100 MHz Memory Format: PSRAM Supplier Device Package: 24-FBGA (6x8) Part Status: Obsolete Memory Interface: Parallel Access Time: 40 ns Memory Organization: 8M x 8 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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S27KL0641DABHI030 | Infineon Technologies |
Description: IC PSRAM 64MBIT PAR 24FBGAPackaging: Tray Package / Case: 24-VBGA Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: PSRAM (Pseudo SRAM) Clock Frequency: 100 MHz Memory Format: PSRAM Supplier Device Package: 24-FBGA (6x8) Part Status: Obsolete Memory Interface: Parallel Access Time: 40 ns Memory Organization: 8M x 8 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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S27KL0641DABHA030 | Infineon Technologies |
Description: IC PSRAM 64MBIT PAR 24FBGAPackaging: Tray Package / Case: 24-VBGA Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: PSRAM (Pseudo SRAM) Clock Frequency: 100 MHz Memory Format: PSRAM Supplier Device Package: 24-FBGA (6x8) Part Status: Obsolete Memory Interface: Parallel Access Time: 40 ns Memory Organization: 8M x 8 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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S27KL0641DABHB030 | Infineon Technologies |
Description: IC PSRAM 64MBIT PAR 24FBGAPackaging: Tray Package / Case: 24-VBGA Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: PSRAM (Pseudo SRAM) Clock Frequency: 100 MHz Memory Format: PSRAM Supplier Device Package: 24-FBGA (6x8) Part Status: Obsolete Memory Interface: Parallel Access Time: 40 ns Memory Organization: 8M x 8 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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S70KL1281DABHI023 | Infineon Technologies |
Description: IC PSRAM 128MBIT PARALLEL 24FBGA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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S70KL1281DABHI020 | Infineon Technologies |
Description: IC PSRAM 128MBIT PARALLEL 24FBGA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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S70KL1281DABHV020 | Infineon Technologies |
Description: IC PSRAM 128MBIT PARALLEL 24FBGA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| TLE73683EXUMA2 | Infineon Technologies |
Description: TLE7368 - OPTIREG PMIC (AUTOMOTI |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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IPP076N12N3G | Infineon Technologies |
Description: IPP076N12 - 12V-300V N-CHANNEL P |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BAR6302LE6327XTMA1 | Infineon Technologies |
Description: RF DIODE PIN 50V 250MW TSLP-2Packaging: Tape & Reel (TR) Package / Case: SOD-882 Diode Type: PIN - Single Operating Temperature: 150°C (TJ) Capacitance @ Vr, F: 0.3pF @ 5V, 1MHz Resistance @ If, F: 1Ohm @ 10mA, 100MHz Voltage - Peak Reverse (Max): 50V Supplier Device Package: PG-TSLP-2-1 Part Status: Active Current - Max: 100 mA Power Dissipation (Max): 250 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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S71KL256SC0BHB003 | Infineon Technologies |
Description: IC FLASH RAM 256MBIT PAR 24FBGA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| BSM100GD120DN2BDLA1 | Infineon Technologies |
Description: IGBT MODULE 1200V Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Full Bridge Operating Temperature: 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 100A NTC Thermistor: No Supplier Device Package: Module Part Status: Last Time Buy Current - Collector (Ic) (Max): 150 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 680 W Current - Collector Cutoff (Max): 2 mA Input Capacitance (Cies) @ Vce: 6.5 nF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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IPA80R310CE | Infineon Technologies |
Description: IPA80R310 - 800V COOLMOS N-CHANNPackaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16.7A (Tc) Rds On (Max) @ Id, Vgs: 310mOhm @ 11A, 10V Power Dissipation (Max): 35W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 1mA Supplier Device Package: PG-TO220 Full Pack Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2320 pF @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IRGIB6B60KDPBF-INF | Infineon Technologies |
Description: IGBT 600V 11A TO220 FPPackaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 91 ns Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 5A Supplier Device Package: TO220 Full Pack Td (on/off) @ 25°C: 60ns/160ns Switching Energy: 600µJ (on), 580µJ (off) Test Condition: 480V, 16A, 23Ohm, 15V Gate Charge: 18.2 nC Part Status: Active Current - Collector (Ic) (Max): 11 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 22 A Power - Max: 38 W |
на замовлення 100 шт: термін постачання 21-31 дні (днів) |
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S27KS0641DPBHB023 | Infineon Technologies |
Description: IC PSRAM 64MBIT PARALLEL 24FBGA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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S70KS1281DPBHV020 | Infineon Technologies |
Description: IC PSRAM 128MBIT PAR 24FBGAPackaging: Tray Package / Case: 24-VBGA Mounting Type: Surface Mount Memory Size: 128Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 1.7V ~ 1.95V Technology: PSRAM (Pseudo SRAM) Clock Frequency: 166 MHz Memory Format: PSRAM Supplier Device Package: 24-FBGA (6x8) Memory Interface: Parallel Access Time: 36 ns Memory Organization: 16M x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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CYW20705A1KWFBGT | Infineon Technologies |
Description: IC RF TXRX+MCU BLE 50WFBGAPackaging: Tape & Reel (TR) Package / Case: 50-WFBGA Sensitivity: -91dBm Mounting Type: Surface Mount Frequency: 2.4GHz Type: TxRx + MCU Operating Temperature: -30°C ~ 85°C Voltage - Supply: 5.5V Power - Output: 10dBm Protocol: Bluetooth v4.1 Current - Receiving: 31mA Data Rate (Max): 3Mbps Current - Transmitting: 65mA Supplier Device Package: 50-WFBGA (4.5x4) GPIO: 8 RF Family/Standard: Bluetooth Serial Interfaces: SPI, UART, USB DigiKey Programmable: Not Verified |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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CYW20705A1KWFBGT | Infineon Technologies |
Description: IC RF TXRX+MCU BLE 50WFBGAPackaging: Cut Tape (CT) Package / Case: 50-WFBGA Sensitivity: -91dBm Mounting Type: Surface Mount Frequency: 2.4GHz Type: TxRx + MCU Operating Temperature: -30°C ~ 85°C Voltage - Supply: 5.5V Power - Output: 10dBm Protocol: Bluetooth v4.1 Current - Receiving: 31mA Data Rate (Max): 3Mbps Current - Transmitting: 65mA Supplier Device Package: 50-WFBGA (4.5x4) GPIO: 8 RF Family/Standard: Bluetooth Serial Interfaces: SPI, UART, USB DigiKey Programmable: Not Verified |
на замовлення 2230 шт: термін постачання 21-31 дні (днів) |
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CYW20705B0KWFBGT | Infineon Technologies |
Description: IC RF TXRX+MCU BLE 50WFBGAPackaging: Tape & Reel (TR) Package / Case: 50-WFBGA Sensitivity: -91dBm Mounting Type: Surface Mount Frequency: 2.4GHz Type: TxRx + MCU Operating Temperature: -30°C ~ 85°C Voltage - Supply: 5.5V Power - Output: 10dBm Protocol: Bluetooth v4.1 Current - Receiving: 31mA Data Rate (Max): 3Mbps Current - Transmitting: 65mA Supplier Device Package: 50-WFBGA (4.5x4) GPIO: 8 RF Family/Standard: Bluetooth Serial Interfaces: SPI, UART, USB DigiKey Programmable: Not Verified |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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CYW20705B0KWFBG | Infineon Technologies |
Description: IC RF TXRX+MCU BLE 50WFBGAPackaging: Tray Package / Case: 50-WFBGA Sensitivity: -91dBm Mounting Type: Surface Mount Frequency: 2.4GHz Type: TxRx + MCU Operating Temperature: -30°C ~ 85°C Voltage - Supply: 5.5V Power - Output: 10dBm Protocol: Bluetooth v4.1 Current - Receiving: 31mA Data Rate (Max): 3Mbps Current - Transmitting: 65mA Supplier Device Package: 50-WFBGA (4.5x4) GPIO: 8 RF Family/Standard: Bluetooth Serial Interfaces: SPI, UART, USB Part Status: Active DigiKey Programmable: Not Verified |
на замовлення 7389 шт: термін постачання 21-31 дні (днів) |
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IRFR2405TRLPBF | Infineon Technologies |
Description: MOSFET N-CH 55V 56A DPAKPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 56A (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 34A, 10V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2430 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TLE9872QTW40XUMA1 | Infineon Technologies |
Description: EMBEDDED POWERPackaging: Tape & Reel (TR) Package / Case: 48-TQFP Exposed Pad Mounting Type: Surface Mount Interface: LINbus, SPI, SSC, UART/USART RAM Size: 8K x 8 Operating Temperature: -40°C ~ 175°C (TJ) Voltage - Supply: 5.5V ~ 27V Controller Series: TLE987x Program Memory Type: FLASH (256kB) Core Processor: ARM® Cortex®-M3 Supplier Device Package: 48-TQFP (7x7) Grade: Automotive Number of I/O: 10 DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IHW40N65R6XKSA1 | Infineon Technologies |
Description: IGBT 650V 83A TO247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 99 ns Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 40A Supplier Device Package: PG-TO247-3 Td (on/off) @ 25°C: 17ns/211ns Switching Energy: 1.1mJ (on), 420µJ (off) Test Condition: 400V, 40A, 10Ohm, 15V Gate Charge: 159 nC Part Status: Active Current - Collector (Ic) (Max): 83 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 120 A Power - Max: 210 W |
на замовлення 230 шт: термін постачання 21-31 дні (днів) |
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IHFW40N65R5SXKSA1 | Infineon Technologies |
Description: IGBT TRENCH FS 650V 61A HSIP247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 103 ns Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A Supplier Device Package: PG-HSIP247-3-2 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 44ns/363ns Switching Energy: 1.52mJ (on), 700µJ (off) Test Condition: 400V, 40A, 23.1Ohm, 15V Gate Charge: 142 nC Part Status: Active Current - Collector (Ic) (Max): 61 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 120 A Power - Max: 108 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TLE42994G | Infineon Technologies |
Description: IC REG LINEAR VOLT TLE42994Packaging: Bulk Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: Fixed Mounting Type: Surface Mount Current - Output: 150mA Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 105 µA Voltage - Input (Max): 45V Number of Regulators: 1 Supplier Device Package: PG-DSO-8-16 Voltage - Output (Min/Fixed): 5V Control Features: Delay, Enable, Reset Part Status: Active PSRR: 66dB (100Hz) Voltage Dropout (Max): 0.5V @ 100mA Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit Current - Supply (Max): 2 mA |
на замовлення 33687 шт: термін постачання 21-31 дні (днів) |
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TLE42644GHTMA1 | Infineon Technologies |
Description: IC REG LIN 5V 100MA PG-SOT223-4Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Output Type: Fixed Mounting Type: Surface Mount Current - Output: 100mA Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 70 µA Voltage - Input (Max): 40V Number of Regulators: 1 Supplier Device Package: PG-SOT223-4 Voltage - Output (Min/Fixed): 5V Part Status: Active PSRR: 68dB (100Hz) Voltage Dropout (Max): 0.5V @ 100mA Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit Current - Supply (Max): 4 mA Grade: Automotive Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TLE4264GHTMA1 | Infineon Technologies |
Description: IC REG LIN 5V 100MA PG-SOT223-4Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Output Type: Fixed Mounting Type: Surface Mount Current - Output: 100mA Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 400 µA Voltage - Input (Max): 45V Number of Regulators: 1 Supplier Device Package: PG-SOT223-4 Voltage - Output (Min/Fixed): 5V Part Status: Active PSRR: 54dB (100Hz) Voltage Dropout (Max): 0.5V @ 100mA Protection Features: Over Temperature, Reverse Polarity, Short Circuit Current - Supply (Max): 15 mA Grade: Automotive Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| CG8632AA | Infineon Technologies |
Description: IC PSOC4 Packaging: Bulk DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| CG8632AAT | Infineon Technologies |
Description: IC PSOC4 Packaging: Bulk DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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KITAURIXTC237TFTTOBO1 | Infineon Technologies |
Description: EVAL TC237 TFT AURIXPackaging: Box Mounting Type: Fixed Type: MCU 32-Bit Contents: Board(s), LCD Core Processor: TriCore™ Utilized IC / Part: TC237 Platform: AURIX |
на замовлення 5 шт: термін постачання 21-31 дні (днів) |
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| IFX1117MEVHTMA1/BKN | Infineon Technologies | Description: IFX1117MEVHTMA1/BKN |
на замовлення 1482 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | |||||||||||||||
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BSC0302LSATMA1 | Infineon Technologies |
Description: MOSFET N-CH 120V 12A/99A TDSONPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 99A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 50A, 10V Power Dissipation (Max): 156W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 112µA Supplier Device Package: PG-TDSON-8-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 120 V Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 60 V |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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BSC030N03MSG | Infineon Technologies |
Description: BSC030N03 - 12V-300V N-CHANNEL P |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BSC030N03LSG | Infineon Technologies |
Description: BSC030N03 - 12V-300V N-CHANNEL PPackaging: Bulk Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 122A (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 30A, 10V Power Dissipation (Max): 2.5W (Ta), 69W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: PG-TDSON-8-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BTM7741G | Infineon Technologies |
Description: BTM7741 - INTEGRATED FULL-BRIDGEPackaging: Bulk Features: Slew Rate Controlled, Status Flag Package / Case: 28-SOIC (0.295", 7.50mm Width) Output Type: N/P-Channel Mounting Type: Surface Mount Number of Outputs: 1 Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: High Side Rds On (Typ): 110mOhm Input Type: Non-Inverting Voltage - Load: 1.8V ~ 42V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 7A Ratio - Input:Output: 1:1 Supplier Device Package: PG-DSO-28-22 Fault Protection: Over Temperature, Short Circuit, UVLO |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TLE4295GV33HTSA1 | Infineon Technologies |
Description: IC REG LIN 3.3V 30MA PG-SCT595-5Packaging: Tape & Reel (TR) Package / Case: 6-SMD (5 Leads), Gull Wing Output Type: Fixed Mounting Type: Surface Mount Current - Output: 30mA Operating Temperature: -40°C ~ 150°C Output Configuration: Positive Current - Quiescent (Iq): 200 µA Voltage - Input (Max): 45V Number of Regulators: 1 Supplier Device Package: PG-SCT595-5 Voltage - Output (Min/Fixed): 3.3V Control Features: Power Fail Part Status: Active PSRR: 60dB (100Hz) Voltage Dropout (Max): 0.4V @ 20mA Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit Current - Supply (Max): 4 mA Grade: Automotive Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| PX8746HDNG008XTMA1 | Infineon Technologies | Description: LED PX8746HDNG008XTMA1 |
на замовлення 800 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | |||||||||||||||
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TLE8250GXUMA5 | Infineon Technologies |
Description: IC TRANSCEIVER HALF 1/1 PGDSO816Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Type: Transceiver Operating Temperature: -40°C ~ 150°C Voltage - Supply: 4.5V ~ 5.5V Number of Drivers/Receivers: 1/1 Data Rate: 1MBd Protocol: CANbus Supplier Device Package: PG-DSO-8-16 Receiver Hysteresis: 200 mV Duplex: Half Part Status: Active |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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TLE8250GXUMA5 | Infineon Technologies |
Description: IC TRANSCEIVER HALF 1/1 PGDSO816Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Type: Transceiver Operating Temperature: -40°C ~ 150°C Voltage - Supply: 4.5V ~ 5.5V Number of Drivers/Receivers: 1/1 Data Rate: 1MBd Protocol: CANbus Supplier Device Package: PG-DSO-8-16 Receiver Hysteresis: 200 mV Duplex: Half Part Status: Active |
на замовлення 6407 шт: термін постачання 21-31 дні (днів) |
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IRFHM8363TRPBF | Infineon Technologies |
Description: MOSFET 2N-CH 30V 11A 8PQFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.7W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 11A Input Capacitance (Ciss) (Max) @ Vds: 1165pF @ 10V Rds On (Max) @ Id, Vgs: 14.9mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.35V @ 25µA Supplier Device Package: 8-PQFN (3.3x3.3), Power33 Part Status: Not For New Designs |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TCA305 CHIP | Infineon Technologies |
Description: IC PROXIMITY SWITCH PDDIP-14 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BAR81WE6327 | Infineon Technologies |
Description: DIODE STANDARD 30V 100MW SOT3434Packaging: Bulk Package / Case: SC-82A, SOT-343 Diode Type: Standard - Single Operating Temperature: 150°C (TJ) Capacitance @ Vr, F: 0.9pF @ 3V, 1MHz Resistance @ If, F: 1Ohm @ 5mA, 100MHz Voltage - Peak Reverse (Max): 30V Supplier Device Package: PG-SOT343-4 Part Status: Active Current - Max: 100 mA Power Dissipation (Max): 100 mW |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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AUIRF7647S2TR | Infineon Technologies |
Description: MOSFET N-CH 100V 5.9A DIRECTFETPackaging: Tape & Reel (TR) Package / Case: DirectFET™ Isometric SC Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.9A (Ta), 24A (Tc) Rds On (Max) @ Id, Vgs: 31mOhm @ 14A, 10V Power Dissipation (Max): 2.5W (Ta), 41W (Tc) Vgs(th) (Max) @ Id: 5V @ 50µA Supplier Device Package: DIRECTFET™ SC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 910 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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AUIRF7647S2TR | Infineon Technologies |
Description: MOSFET N-CH 100V 5.9A DIRECTFETPackaging: Cut Tape (CT) Package / Case: DirectFET™ Isometric SC Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.9A (Ta), 24A (Tc) Rds On (Max) @ Id, Vgs: 31mOhm @ 14A, 10V Power Dissipation (Max): 2.5W (Ta), 41W (Tc) Vgs(th) (Max) @ Id: 5V @ 50µA Supplier Device Package: DIRECTFET™ SC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 910 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 3224 шт: термін постачання 21-31 дні (днів) |
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CY96F673ABPMC1-GS101UJE1 | Infineon Technologies |
Description: IC MCU 16BIT 96KB FLASH 64LQFPPackaging: Tray Package / Case: 64-LQFP Mounting Type: Surface Mount Speed: 32MHz Program Memory Size: 96KB (96K x 8) RAM Size: 4K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: F²MC-16FX Data Converters: A/D 12x8/10b SAR Core Size: 16-Bit Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Connectivity: I2C, LINbus, SCI, UART/USART Peripherals: DMA, LCD, LVD, POR, PWM, WDT Supplier Device Package: 64-LQFP (10x10) Number of I/O: 50 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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CY96F673ABPMC1-GS102UJE1 | Infineon Technologies |
Description: IC MCU 16BIT 96KB FLASH 64LQFPPackaging: Tray Package / Case: 64-LQFP Mounting Type: Surface Mount Speed: 32MHz Program Memory Size: 96KB (96K x 8) RAM Size: 4K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: F²MC-16FX Data Converters: A/D 12x8/10b SAR Core Size: 16-Bit Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Connectivity: I2C, LINbus, SCI, UART/USART Peripherals: DMA, LCD, LVD, POR, PWM, WDT Supplier Device Package: 64-LQFP (10x10) Number of I/O: 50 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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CY62148ELL-45ZSXA | Infineon Technologies |
Description: IC SRAM 4MBIT PARALLEL 32TSOP IIPackaging: Bulk Package / Case: 32-SOIC (0.400", 10.16mm Width) Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 4.5V ~ 5.5V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 32-TSOP II Write Cycle Time - Word, Page: 45ns Memory Interface: Parallel Access Time: 45 ns Memory Organization: 512K x 8 DigiKey Programmable: Not Verified |
на замовлення 2467 шт: термін постачання 21-31 дні (днів) |
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| SIPC69SN60C3X3SA1 | Infineon Technologies |
Description: N-CHANNEL POWER MOSFET Packaging: Bulk |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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| SIPC69SN60C3X2SA1 | Infineon Technologies |
Description: N-CHANNEL POWER MOSFET Packaging: Bulk |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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IPI60R280C6 | Infineon Technologies |
Description: MOSFET N-CH 600V 13.8A TO262-3Packaging: Bulk Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 6.5A, 10V Power Dissipation (Max): 104W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 430µA Supplier Device Package: PG-TO262-3-1 Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V |
на замовлення 1083 шт: термін постачання 21-31 дні (днів) |
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IPI60R280C6XKSA1 | Infineon Technologies |
Description: MOSFET N-CH 600V 13.8A TO262-3Packaging: Bulk Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 6.5A, 10V Power Dissipation (Max): 104W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 430µA Supplier Device Package: PG-TO262-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V |
на замовлення 2121 шт: термін постачання 21-31 дні (днів) |
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IAUC100N10S5N040ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 100V 100A 8TDSON-34Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V Power Dissipation (Max): 167W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 90µA Supplier Device Package: PG-TDSON-8-34 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 50 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BF771E6327HTSA1 | Infineon Technologies |
Description: RF TRANS NPN 12V 8GHZ SOT23-3Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Gain: 10dB ~ 15dB Power - Max: 580mW Current - Collector (Ic) (Max): 80mA Voltage - Collector Emitter Breakdown (Max): 12V DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz Supplier Device Package: PG-SOT23 Part Status: Active |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
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BAS40B5003 | Infineon Technologies |
Description: DIODE SCHOTT 40V 120MA PGSOT2333Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Capacitance @ Vr, F: 3pF @ 0V, 1MHz Current - Average Rectified (Io): 120mA Supplier Device Package: PG-SOT23-3-3 Operating Temperature - Junction: 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA Current - Reverse Leakage @ Vr: 1 µA @ 30 V Qualification: AEC-Q101 |
на замовлення 107110 шт: термін постачання 21-31 дні (днів) |
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IAUC60N04S6L030HATMA1 | Infineon Technologies |
Description: MOSFET 2N-CH 40V 60A 8TDSONPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 75W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 60A (Tj) Input Capacitance (Ciss) (Max) @ Vds: 2128pF @ 25V Rds On (Max) @ Id, Vgs: 3mOhm @ 30A, 10V Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2V @ 25µA Supplier Device Package: PG-TDSON-8-56 Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
на замовлення 4685 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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IAUC60N04S6L030HATMA1 | Infineon Technologies |
Description: MOSFET 2N-CH 40V 60A 8TDSONPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 75W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 60A (Tj) Input Capacitance (Ciss) (Max) @ Vds: 2128pF @ 25V Rds On (Max) @ Id, Vgs: 3mOhm @ 30A, 10V Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2V @ 25µA Supplier Device Package: PG-TDSON-8-56 Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
на замовлення 4685 шт: термін постачання 21-31 дні (днів) |
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| ICE5QR4770AZXKLA1 |
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Виробник: Infineon Technologies
Description: IC OFFLINE SWITCH FLYBACK 7DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C (TJ)
Internal Switch(s): Yes
Voltage - Breakdown: 700V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 27V
Supplier Device Package: PG-DIP-7
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
Part Status: Not For New Designs
Power (Watts): 27 W
Description: IC OFFLINE SWITCH FLYBACK 7DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C (TJ)
Internal Switch(s): Yes
Voltage - Breakdown: 700V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 27V
Supplier Device Package: PG-DIP-7
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
Part Status: Not For New Designs
Power (Watts): 27 W
на замовлення 5926 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 318+ | 72.18 грн |
| ICE5QR4770AGXUMA1 |
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Виробник: Infineon Technologies
Description: IC OFFLINE SWITCH FLYBACK 12DSO
Packaging: Bulk
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Internal Switch(s): Yes
Voltage - Breakdown: 700V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 27V
Supplier Device Package: PG-DSO-12-21
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
Part Status: Not For New Designs
Power (Watts): 27 W
Description: IC OFFLINE SWITCH FLYBACK 12DSO
Packaging: Bulk
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Internal Switch(s): Yes
Voltage - Breakdown: 700V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 27V
Supplier Device Package: PG-DSO-12-21
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
Part Status: Not For New Designs
Power (Watts): 27 W
на замовлення 1046 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 318+ | 72.18 грн |
| ICE5QR2270AZ |
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Виробник: Infineon Technologies
Description: ICE5QR2270 - QUASI RESONANT COOL
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Internal Switch(s): Yes
Voltage - Breakdown: 700V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 25.5V
Supplier Device Package: PG-DIP-7
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
Control Features: Frequency Control, Soft Start
Part Status: Active
Power (Watts): 41 W
Description: ICE5QR2270 - QUASI RESONANT COOL
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Internal Switch(s): Yes
Voltage - Breakdown: 700V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 25.5V
Supplier Device Package: PG-DIP-7
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
Control Features: Frequency Control, Soft Start
Part Status: Active
Power (Watts): 41 W
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 228+ | 99.42 грн |
| PXDNGL01TOBO1 |
Виробник: Infineon Technologies
Description: EVAL DONGLE
Packaging: Bulk
Type: License
License - User Details: USB Dongle
Description: EVAL DONGLE
Packaging: Bulk
Type: License
License - User Details: USB Dongle
на замовлення 37 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 4542.67 грн |
| S27KL0641DABHA033 |
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Виробник: Infineon Technologies
Description: IC PSRAM 64MBIT PAR 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 100 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Part Status: Obsolete
Memory Interface: Parallel
Access Time: 40 ns
Memory Organization: 8M x 8
Description: IC PSRAM 64MBIT PAR 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 100 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Part Status: Obsolete
Memory Interface: Parallel
Access Time: 40 ns
Memory Organization: 8M x 8
товару немає в наявності
В кошику
од. на суму грн.
| S27KL0641DABHI030 |
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Виробник: Infineon Technologies
Description: IC PSRAM 64MBIT PAR 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 100 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Part Status: Obsolete
Memory Interface: Parallel
Access Time: 40 ns
Memory Organization: 8M x 8
Description: IC PSRAM 64MBIT PAR 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 100 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Part Status: Obsolete
Memory Interface: Parallel
Access Time: 40 ns
Memory Organization: 8M x 8
товару немає в наявності
В кошику
од. на суму грн.
| S27KL0641DABHA030 |
![]() |
Виробник: Infineon Technologies
Description: IC PSRAM 64MBIT PAR 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 100 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Part Status: Obsolete
Memory Interface: Parallel
Access Time: 40 ns
Memory Organization: 8M x 8
Description: IC PSRAM 64MBIT PAR 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 100 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Part Status: Obsolete
Memory Interface: Parallel
Access Time: 40 ns
Memory Organization: 8M x 8
товару немає в наявності
В кошику
од. на суму грн.
| S27KL0641DABHB030 |
![]() |
Виробник: Infineon Technologies
Description: IC PSRAM 64MBIT PAR 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 100 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Part Status: Obsolete
Memory Interface: Parallel
Access Time: 40 ns
Memory Organization: 8M x 8
Description: IC PSRAM 64MBIT PAR 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 100 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Part Status: Obsolete
Memory Interface: Parallel
Access Time: 40 ns
Memory Organization: 8M x 8
товару немає в наявності
В кошику
од. на суму грн.
| S70KL1281DABHI023 |
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Виробник: Infineon Technologies
Description: IC PSRAM 128MBIT PARALLEL 24FBGA
Description: IC PSRAM 128MBIT PARALLEL 24FBGA
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В кошику
од. на суму грн.
| S70KL1281DABHI020 |
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Виробник: Infineon Technologies
Description: IC PSRAM 128MBIT PARALLEL 24FBGA
Description: IC PSRAM 128MBIT PARALLEL 24FBGA
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В кошику
од. на суму грн.
| S70KL1281DABHV020 |
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Виробник: Infineon Technologies
Description: IC PSRAM 128MBIT PARALLEL 24FBGA
Description: IC PSRAM 128MBIT PARALLEL 24FBGA
товару немає в наявності
В кошику
од. на суму грн.
| TLE73683EXUMA2 |
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Виробник: Infineon Technologies
Description: TLE7368 - OPTIREG PMIC (AUTOMOTI
Description: TLE7368 - OPTIREG PMIC (AUTOMOTI
товару немає в наявності
В кошику
од. на суму грн.
| IPP076N12N3G |
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Виробник: Infineon Technologies
Description: IPP076N12 - 12V-300V N-CHANNEL P
Description: IPP076N12 - 12V-300V N-CHANNEL P
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В кошику
од. на суму грн.
| BAR6302LE6327XTMA1 |
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Виробник: Infineon Technologies
Description: RF DIODE PIN 50V 250MW TSLP-2
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.3pF @ 5V, 1MHz
Resistance @ If, F: 1Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: PG-TSLP-2-1
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
Description: RF DIODE PIN 50V 250MW TSLP-2
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.3pF @ 5V, 1MHz
Resistance @ If, F: 1Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: PG-TSLP-2-1
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
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| S71KL256SC0BHB003 |
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Виробник: Infineon Technologies
Description: IC FLASH RAM 256MBIT PAR 24FBGA
Description: IC FLASH RAM 256MBIT PAR 24FBGA
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| BSM100GD120DN2BDLA1 |
Виробник: Infineon Technologies
Description: IGBT MODULE 1200V
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 680 W
Current - Collector Cutoff (Max): 2 mA
Input Capacitance (Cies) @ Vce: 6.5 nF @ 25 V
Description: IGBT MODULE 1200V
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 680 W
Current - Collector Cutoff (Max): 2 mA
Input Capacitance (Cies) @ Vce: 6.5 nF @ 25 V
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| IPA80R310CE |
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Виробник: Infineon Technologies
Description: IPA80R310 - 800V COOLMOS N-CHANN
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.7A (Tc)
Rds On (Max) @ Id, Vgs: 310mOhm @ 11A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Supplier Device Package: PG-TO220 Full Pack
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2320 pF @ 100 V
Description: IPA80R310 - 800V COOLMOS N-CHANN
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.7A (Tc)
Rds On (Max) @ Id, Vgs: 310mOhm @ 11A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Supplier Device Package: PG-TO220 Full Pack
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2320 pF @ 100 V
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| IRGIB6B60KDPBF-INF |
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Виробник: Infineon Technologies
Description: IGBT 600V 11A TO220 FP
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 91 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 5A
Supplier Device Package: TO220 Full Pack
Td (on/off) @ 25°C: 60ns/160ns
Switching Energy: 600µJ (on), 580µJ (off)
Test Condition: 480V, 16A, 23Ohm, 15V
Gate Charge: 18.2 nC
Part Status: Active
Current - Collector (Ic) (Max): 11 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 22 A
Power - Max: 38 W
Description: IGBT 600V 11A TO220 FP
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 91 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 5A
Supplier Device Package: TO220 Full Pack
Td (on/off) @ 25°C: 60ns/160ns
Switching Energy: 600µJ (on), 580µJ (off)
Test Condition: 480V, 16A, 23Ohm, 15V
Gate Charge: 18.2 nC
Part Status: Active
Current - Collector (Ic) (Max): 11 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 22 A
Power - Max: 38 W
на замовлення 100 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 100+ | 212.59 грн |
| S27KS0641DPBHB023 |
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Виробник: Infineon Technologies
Description: IC PSRAM 64MBIT PARALLEL 24FBGA
Description: IC PSRAM 64MBIT PARALLEL 24FBGA
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| S70KS1281DPBHV020 |
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Виробник: Infineon Technologies
Description: IC PSRAM 128MBIT PAR 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 166 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Memory Interface: Parallel
Access Time: 36 ns
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
Description: IC PSRAM 128MBIT PAR 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 166 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Memory Interface: Parallel
Access Time: 36 ns
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
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| CYW20705A1KWFBGT |
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Виробник: Infineon Technologies
Description: IC RF TXRX+MCU BLE 50WFBGA
Packaging: Tape & Reel (TR)
Package / Case: 50-WFBGA
Sensitivity: -91dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 5.5V
Power - Output: 10dBm
Protocol: Bluetooth v4.1
Current - Receiving: 31mA
Data Rate (Max): 3Mbps
Current - Transmitting: 65mA
Supplier Device Package: 50-WFBGA (4.5x4)
GPIO: 8
RF Family/Standard: Bluetooth
Serial Interfaces: SPI, UART, USB
DigiKey Programmable: Not Verified
Description: IC RF TXRX+MCU BLE 50WFBGA
Packaging: Tape & Reel (TR)
Package / Case: 50-WFBGA
Sensitivity: -91dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 5.5V
Power - Output: 10dBm
Protocol: Bluetooth v4.1
Current - Receiving: 31mA
Data Rate (Max): 3Mbps
Current - Transmitting: 65mA
Supplier Device Package: 50-WFBGA (4.5x4)
GPIO: 8
RF Family/Standard: Bluetooth
Serial Interfaces: SPI, UART, USB
DigiKey Programmable: Not Verified
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 90.78 грн |
| CYW20705A1KWFBGT |
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Виробник: Infineon Technologies
Description: IC RF TXRX+MCU BLE 50WFBGA
Packaging: Cut Tape (CT)
Package / Case: 50-WFBGA
Sensitivity: -91dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 5.5V
Power - Output: 10dBm
Protocol: Bluetooth v4.1
Current - Receiving: 31mA
Data Rate (Max): 3Mbps
Current - Transmitting: 65mA
Supplier Device Package: 50-WFBGA (4.5x4)
GPIO: 8
RF Family/Standard: Bluetooth
Serial Interfaces: SPI, UART, USB
DigiKey Programmable: Not Verified
Description: IC RF TXRX+MCU BLE 50WFBGA
Packaging: Cut Tape (CT)
Package / Case: 50-WFBGA
Sensitivity: -91dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 5.5V
Power - Output: 10dBm
Protocol: Bluetooth v4.1
Current - Receiving: 31mA
Data Rate (Max): 3Mbps
Current - Transmitting: 65mA
Supplier Device Package: 50-WFBGA (4.5x4)
GPIO: 8
RF Family/Standard: Bluetooth
Serial Interfaces: SPI, UART, USB
DigiKey Programmable: Not Verified
на замовлення 2230 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 90.87 грн |
| CYW20705B0KWFBGT |
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Виробник: Infineon Technologies
Description: IC RF TXRX+MCU BLE 50WFBGA
Packaging: Tape & Reel (TR)
Package / Case: 50-WFBGA
Sensitivity: -91dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 5.5V
Power - Output: 10dBm
Protocol: Bluetooth v4.1
Current - Receiving: 31mA
Data Rate (Max): 3Mbps
Current - Transmitting: 65mA
Supplier Device Package: 50-WFBGA (4.5x4)
GPIO: 8
RF Family/Standard: Bluetooth
Serial Interfaces: SPI, UART, USB
DigiKey Programmable: Not Verified
Description: IC RF TXRX+MCU BLE 50WFBGA
Packaging: Tape & Reel (TR)
Package / Case: 50-WFBGA
Sensitivity: -91dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 5.5V
Power - Output: 10dBm
Protocol: Bluetooth v4.1
Current - Receiving: 31mA
Data Rate (Max): 3Mbps
Current - Transmitting: 65mA
Supplier Device Package: 50-WFBGA (4.5x4)
GPIO: 8
RF Family/Standard: Bluetooth
Serial Interfaces: SPI, UART, USB
DigiKey Programmable: Not Verified
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 92.80 грн |
| CYW20705B0KWFBG |
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Виробник: Infineon Technologies
Description: IC RF TXRX+MCU BLE 50WFBGA
Packaging: Tray
Package / Case: 50-WFBGA
Sensitivity: -91dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 5.5V
Power - Output: 10dBm
Protocol: Bluetooth v4.1
Current - Receiving: 31mA
Data Rate (Max): 3Mbps
Current - Transmitting: 65mA
Supplier Device Package: 50-WFBGA (4.5x4)
GPIO: 8
RF Family/Standard: Bluetooth
Serial Interfaces: SPI, UART, USB
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC RF TXRX+MCU BLE 50WFBGA
Packaging: Tray
Package / Case: 50-WFBGA
Sensitivity: -91dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 5.5V
Power - Output: 10dBm
Protocol: Bluetooth v4.1
Current - Receiving: 31mA
Data Rate (Max): 3Mbps
Current - Transmitting: 65mA
Supplier Device Package: 50-WFBGA (4.5x4)
GPIO: 8
RF Family/Standard: Bluetooth
Serial Interfaces: SPI, UART, USB
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 7389 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 93.35 грн |
| IRFR2405TRLPBF |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 56A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 34A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2430 pF @ 25 V
Description: MOSFET N-CH 55V 56A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 34A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2430 pF @ 25 V
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| TLE9872QTW40XUMA1 |
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Виробник: Infineon Technologies
Description: EMBEDDED POWER
Packaging: Tape & Reel (TR)
Package / Case: 48-TQFP Exposed Pad
Mounting Type: Surface Mount
Interface: LINbus, SPI, SSC, UART/USART
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 175°C (TJ)
Voltage - Supply: 5.5V ~ 27V
Controller Series: TLE987x
Program Memory Type: FLASH (256kB)
Core Processor: ARM® Cortex®-M3
Supplier Device Package: 48-TQFP (7x7)
Grade: Automotive
Number of I/O: 10
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: EMBEDDED POWER
Packaging: Tape & Reel (TR)
Package / Case: 48-TQFP Exposed Pad
Mounting Type: Surface Mount
Interface: LINbus, SPI, SSC, UART/USART
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 175°C (TJ)
Voltage - Supply: 5.5V ~ 27V
Controller Series: TLE987x
Program Memory Type: FLASH (256kB)
Core Processor: ARM® Cortex®-M3
Supplier Device Package: 48-TQFP (7x7)
Grade: Automotive
Number of I/O: 10
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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| IHW40N65R6XKSA1 |
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Виробник: Infineon Technologies
Description: IGBT 650V 83A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 99 ns
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 40A
Supplier Device Package: PG-TO247-3
Td (on/off) @ 25°C: 17ns/211ns
Switching Energy: 1.1mJ (on), 420µJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 159 nC
Part Status: Active
Current - Collector (Ic) (Max): 83 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 210 W
Description: IGBT 650V 83A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 99 ns
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 40A
Supplier Device Package: PG-TO247-3
Td (on/off) @ 25°C: 17ns/211ns
Switching Energy: 1.1mJ (on), 420µJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 159 nC
Part Status: Active
Current - Collector (Ic) (Max): 83 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 210 W
на замовлення 230 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 226.35 грн |
| 30+ | 117.87 грн |
| 120+ | 95.76 грн |
| IHFW40N65R5SXKSA1 |
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Виробник: Infineon Technologies
Description: IGBT TRENCH FS 650V 61A HSIP247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 103 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
Supplier Device Package: PG-HSIP247-3-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 44ns/363ns
Switching Energy: 1.52mJ (on), 700µJ (off)
Test Condition: 400V, 40A, 23.1Ohm, 15V
Gate Charge: 142 nC
Part Status: Active
Current - Collector (Ic) (Max): 61 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 108 W
Description: IGBT TRENCH FS 650V 61A HSIP247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 103 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
Supplier Device Package: PG-HSIP247-3-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 44ns/363ns
Switching Energy: 1.52mJ (on), 700µJ (off)
Test Condition: 400V, 40A, 23.1Ohm, 15V
Gate Charge: 142 nC
Part Status: Active
Current - Collector (Ic) (Max): 61 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 108 W
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| TLE42994G |
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Виробник: Infineon Technologies
Description: IC REG LINEAR VOLT TLE42994
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 105 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-DSO-8-16
Voltage - Output (Min/Fixed): 5V
Control Features: Delay, Enable, Reset
Part Status: Active
PSRR: 66dB (100Hz)
Voltage Dropout (Max): 0.5V @ 100mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 2 mA
Description: IC REG LINEAR VOLT TLE42994
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 105 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-DSO-8-16
Voltage - Output (Min/Fixed): 5V
Control Features: Delay, Enable, Reset
Part Status: Active
PSRR: 66dB (100Hz)
Voltage Dropout (Max): 0.5V @ 100mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 2 mA
на замовлення 33687 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 291+ | 85.09 грн |
| TLE42644GHTMA1 |
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Виробник: Infineon Technologies
Description: IC REG LIN 5V 100MA PG-SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 70 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-SOT223-4
Voltage - Output (Min/Fixed): 5V
Part Status: Active
PSRR: 68dB (100Hz)
Voltage Dropout (Max): 0.5V @ 100mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 4 mA
Grade: Automotive
Qualification: AEC-Q100
Description: IC REG LIN 5V 100MA PG-SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 70 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-SOT223-4
Voltage - Output (Min/Fixed): 5V
Part Status: Active
PSRR: 68dB (100Hz)
Voltage Dropout (Max): 0.5V @ 100mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 4 mA
Grade: Automotive
Qualification: AEC-Q100
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| TLE4264GHTMA1 |
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Виробник: Infineon Technologies
Description: IC REG LIN 5V 100MA PG-SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 400 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-SOT223-4
Voltage - Output (Min/Fixed): 5V
Part Status: Active
PSRR: 54dB (100Hz)
Voltage Dropout (Max): 0.5V @ 100mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 15 mA
Grade: Automotive
Qualification: AEC-Q100
Description: IC REG LIN 5V 100MA PG-SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 400 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-SOT223-4
Voltage - Output (Min/Fixed): 5V
Part Status: Active
PSRR: 54dB (100Hz)
Voltage Dropout (Max): 0.5V @ 100mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 15 mA
Grade: Automotive
Qualification: AEC-Q100
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| CG8632AA |
Виробник: Infineon Technologies
Description: IC PSOC4
Packaging: Bulk
DigiKey Programmable: Not Verified
Description: IC PSOC4
Packaging: Bulk
DigiKey Programmable: Not Verified
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| CG8632AAT |
Виробник: Infineon Technologies
Description: IC PSOC4
Packaging: Bulk
DigiKey Programmable: Not Verified
Description: IC PSOC4
Packaging: Bulk
DigiKey Programmable: Not Verified
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| KITAURIXTC237TFTTOBO1 |
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Виробник: Infineon Technologies
Description: EVAL TC237 TFT AURIX
Packaging: Box
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s), LCD
Core Processor: TriCore™
Utilized IC / Part: TC237
Platform: AURIX
Description: EVAL TC237 TFT AURIX
Packaging: Box
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s), LCD
Core Processor: TriCore™
Utilized IC / Part: TC237
Platform: AURIX
на замовлення 5 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 16841.50 грн |
| IFX1117MEVHTMA1/BKN |
Виробник: Infineon Technologies
Description: IFX1117MEVHTMA1/BKN
Description: IFX1117MEVHTMA1/BKN
на замовлення 1482 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| BSC0302LSATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 120V 12A/99A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 99A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 50A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 112µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 60 V
Description: MOSFET N-CH 120V 12A/99A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 99A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 50A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 112µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 60 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5000+ | 66.02 грн |
| BSC030N03MSG |
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Виробник: Infineon Technologies
Description: BSC030N03 - 12V-300V N-CHANNEL P
Description: BSC030N03 - 12V-300V N-CHANNEL P
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| BSC030N03LSG |
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Виробник: Infineon Technologies
Description: BSC030N03 - 12V-300V N-CHANNEL P
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 122A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 15 V
Description: BSC030N03 - 12V-300V N-CHANNEL P
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 122A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 15 V
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| BTM7741G |
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Виробник: Infineon Technologies
Description: BTM7741 - INTEGRATED FULL-BRIDGE
Packaging: Bulk
Features: Slew Rate Controlled, Status Flag
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Output Type: N/P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 110mOhm
Input Type: Non-Inverting
Voltage - Load: 1.8V ~ 42V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 7A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-28-22
Fault Protection: Over Temperature, Short Circuit, UVLO
Description: BTM7741 - INTEGRATED FULL-BRIDGE
Packaging: Bulk
Features: Slew Rate Controlled, Status Flag
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Output Type: N/P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 110mOhm
Input Type: Non-Inverting
Voltage - Load: 1.8V ~ 42V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 7A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-28-22
Fault Protection: Over Temperature, Short Circuit, UVLO
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| TLE4295GV33HTSA1 |
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Виробник: Infineon Technologies
Description: IC REG LIN 3.3V 30MA PG-SCT595-5
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD (5 Leads), Gull Wing
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 30mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 200 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-SCT595-5
Voltage - Output (Min/Fixed): 3.3V
Control Features: Power Fail
Part Status: Active
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.4V @ 20mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 4 mA
Grade: Automotive
Qualification: AEC-Q100
Description: IC REG LIN 3.3V 30MA PG-SCT595-5
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD (5 Leads), Gull Wing
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 30mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 200 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-SCT595-5
Voltage - Output (Min/Fixed): 3.3V
Control Features: Power Fail
Part Status: Active
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.4V @ 20mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 4 mA
Grade: Automotive
Qualification: AEC-Q100
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| PX8746HDNG008XTMA1 |
Виробник: Infineon Technologies
Description: LED PX8746HDNG008XTMA1
Description: LED PX8746HDNG008XTMA1
на замовлення 800 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| TLE8250GXUMA5 |
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Виробник: Infineon Technologies
Description: IC TRANSCEIVER HALF 1/1 PGDSO816
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4.5V ~ 5.5V
Number of Drivers/Receivers: 1/1
Data Rate: 1MBd
Protocol: CANbus
Supplier Device Package: PG-DSO-8-16
Receiver Hysteresis: 200 mV
Duplex: Half
Part Status: Active
Description: IC TRANSCEIVER HALF 1/1 PGDSO816
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4.5V ~ 5.5V
Number of Drivers/Receivers: 1/1
Data Rate: 1MBd
Protocol: CANbus
Supplier Device Package: PG-DSO-8-16
Receiver Hysteresis: 200 mV
Duplex: Half
Part Status: Active
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 68.93 грн |
| TLE8250GXUMA5 |
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Виробник: Infineon Technologies
Description: IC TRANSCEIVER HALF 1/1 PGDSO816
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4.5V ~ 5.5V
Number of Drivers/Receivers: 1/1
Data Rate: 1MBd
Protocol: CANbus
Supplier Device Package: PG-DSO-8-16
Receiver Hysteresis: 200 mV
Duplex: Half
Part Status: Active
Description: IC TRANSCEIVER HALF 1/1 PGDSO816
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4.5V ~ 5.5V
Number of Drivers/Receivers: 1/1
Data Rate: 1MBd
Protocol: CANbus
Supplier Device Package: PG-DSO-8-16
Receiver Hysteresis: 200 mV
Duplex: Half
Part Status: Active
на замовлення 6407 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 135.48 грн |
| 10+ | 96.41 грн |
| 25+ | 87.82 грн |
| 100+ | 73.47 грн |
| 250+ | 69.20 грн |
| 500+ | 66.63 грн |
| 1000+ | 63.46 грн |
| IRFHM8363TRPBF |
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Виробник: Infineon Technologies
Description: MOSFET 2N-CH 30V 11A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.7W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 11A
Input Capacitance (Ciss) (Max) @ Vds: 1165pF @ 10V
Rds On (Max) @ Id, Vgs: 14.9mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: 8-PQFN (3.3x3.3), Power33
Part Status: Not For New Designs
Description: MOSFET 2N-CH 30V 11A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.7W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 11A
Input Capacitance (Ciss) (Max) @ Vds: 1165pF @ 10V
Rds On (Max) @ Id, Vgs: 14.9mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: 8-PQFN (3.3x3.3), Power33
Part Status: Not For New Designs
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| TCA305 CHIP |
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Виробник: Infineon Technologies
Description: IC PROXIMITY SWITCH PDDIP-14
Description: IC PROXIMITY SWITCH PDDIP-14
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| BAR81WE6327 |
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Виробник: Infineon Technologies
Description: DIODE STANDARD 30V 100MW SOT3434
Packaging: Bulk
Package / Case: SC-82A, SOT-343
Diode Type: Standard - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.9pF @ 3V, 1MHz
Resistance @ If, F: 1Ohm @ 5mA, 100MHz
Voltage - Peak Reverse (Max): 30V
Supplier Device Package: PG-SOT343-4
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 100 mW
Description: DIODE STANDARD 30V 100MW SOT3434
Packaging: Bulk
Package / Case: SC-82A, SOT-343
Diode Type: Standard - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.9pF @ 3V, 1MHz
Resistance @ If, F: 1Ohm @ 5mA, 100MHz
Voltage - Peak Reverse (Max): 30V
Supplier Device Package: PG-SOT343-4
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 100 mW
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1549+ | 13.80 грн |
| AUIRF7647S2TR |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 5.9A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric SC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.9A (Ta), 24A (Tc)
Rds On (Max) @ Id, Vgs: 31mOhm @ 14A, 10V
Power Dissipation (Max): 2.5W (Ta), 41W (Tc)
Vgs(th) (Max) @ Id: 5V @ 50µA
Supplier Device Package: DIRECTFET™ SC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 910 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 100V 5.9A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric SC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.9A (Ta), 24A (Tc)
Rds On (Max) @ Id, Vgs: 31mOhm @ 14A, 10V
Power Dissipation (Max): 2.5W (Ta), 41W (Tc)
Vgs(th) (Max) @ Id: 5V @ 50µA
Supplier Device Package: DIRECTFET™ SC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 910 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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| AUIRF7647S2TR |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 5.9A DIRECTFET
Packaging: Cut Tape (CT)
Package / Case: DirectFET™ Isometric SC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.9A (Ta), 24A (Tc)
Rds On (Max) @ Id, Vgs: 31mOhm @ 14A, 10V
Power Dissipation (Max): 2.5W (Ta), 41W (Tc)
Vgs(th) (Max) @ Id: 5V @ 50µA
Supplier Device Package: DIRECTFET™ SC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 910 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 100V 5.9A DIRECTFET
Packaging: Cut Tape (CT)
Package / Case: DirectFET™ Isometric SC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.9A (Ta), 24A (Tc)
Rds On (Max) @ Id, Vgs: 31mOhm @ 14A, 10V
Power Dissipation (Max): 2.5W (Ta), 41W (Tc)
Vgs(th) (Max) @ Id: 5V @ 50µA
Supplier Device Package: DIRECTFET™ SC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 910 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3224 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 158.61 грн |
| 10+ | 124.81 грн |
| 100+ | 92.74 грн |
| 500+ | 75.93 грн |
| CY96F673ABPMC1-GS101UJE1 |
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Виробник: Infineon Technologies
Description: IC MCU 16BIT 96KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 96KB (96K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: F²MC-16FX
Data Converters: A/D 12x8/10b SAR
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: I2C, LINbus, SCI, UART/USART
Peripherals: DMA, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Number of I/O: 50
DigiKey Programmable: Not Verified
Description: IC MCU 16BIT 96KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 96KB (96K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: F²MC-16FX
Data Converters: A/D 12x8/10b SAR
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: I2C, LINbus, SCI, UART/USART
Peripherals: DMA, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Number of I/O: 50
DigiKey Programmable: Not Verified
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| CY96F673ABPMC1-GS102UJE1 |
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Виробник: Infineon Technologies
Description: IC MCU 16BIT 96KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 96KB (96K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: F²MC-16FX
Data Converters: A/D 12x8/10b SAR
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: I2C, LINbus, SCI, UART/USART
Peripherals: DMA, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Number of I/O: 50
DigiKey Programmable: Not Verified
Description: IC MCU 16BIT 96KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 96KB (96K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: F²MC-16FX
Data Converters: A/D 12x8/10b SAR
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: I2C, LINbus, SCI, UART/USART
Peripherals: DMA, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Number of I/O: 50
DigiKey Programmable: Not Verified
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| CY62148ELL-45ZSXA |
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Виробник: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 32TSOP II
Packaging: Bulk
Package / Case: 32-SOIC (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-TSOP II
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
Description: IC SRAM 4MBIT PARALLEL 32TSOP II
Packaging: Bulk
Package / Case: 32-SOIC (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-TSOP II
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
на замовлення 2467 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 39+ | 596.23 грн |
| SIPC69SN60C3X3SA1 |
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 55+ | 418.33 грн |
| SIPC69SN60C3X2SA1 |
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 55+ | 418.33 грн |
| IPI60R280C6 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 13.8A TO262-3
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 6.5A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 430µA
Supplier Device Package: PG-TO262-3-1
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V
Description: MOSFET N-CH 600V 13.8A TO262-3
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 6.5A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 430µA
Supplier Device Package: PG-TO262-3-1
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V
на замовлення 1083 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 202+ | 113.36 грн |
| IPI60R280C6XKSA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 13.8A TO262-3
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 6.5A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 430µA
Supplier Device Package: PG-TO262-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V
Description: MOSFET N-CH 600V 13.8A TO262-3
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 6.5A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 430µA
Supplier Device Package: PG-TO262-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V
на замовлення 2121 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 214+ | 106.68 грн |
| IAUC100N10S5N040ATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 100A 8TDSON-34
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 90µA
Supplier Device Package: PG-TDSON-8-34
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 100V 100A 8TDSON-34
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 90µA
Supplier Device Package: PG-TDSON-8-34
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| BF771E6327HTSA1 |
![]() |
Виробник: Infineon Technologies
Description: RF TRANS NPN 12V 8GHZ SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 10dB ~ 15dB
Power - Max: 580mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz
Supplier Device Package: PG-SOT23
Part Status: Active
Description: RF TRANS NPN 12V 8GHZ SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 10dB ~ 15dB
Power - Max: 580mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz
Supplier Device Package: PG-SOT23
Part Status: Active
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 7.52 грн |
| 6000+ | 7.02 грн |
| 9000+ | 6.91 грн |
| BAS40B5003 |
![]() |
Виробник: Infineon Technologies
Description: DIODE SCHOTT 40V 120MA PGSOT2333
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 3pF @ 0V, 1MHz
Current - Average Rectified (Io): 120mA
Supplier Device Package: PG-SOT23-3-3
Operating Temperature - Junction: 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 1 µA @ 30 V
Qualification: AEC-Q101
Description: DIODE SCHOTT 40V 120MA PGSOT2333
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 3pF @ 0V, 1MHz
Current - Average Rectified (Io): 120mA
Supplier Device Package: PG-SOT23-3-3
Operating Temperature - Junction: 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 1 µA @ 30 V
Qualification: AEC-Q101
на замовлення 107110 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8510+ | 3.05 грн |
| IAUC60N04S6L030HATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 40V 60A 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 75W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 60A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 2128pF @ 25V
Rds On (Max) @ Id, Vgs: 3mOhm @ 30A, 10V
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 25µA
Supplier Device Package: PG-TDSON-8-56
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N-CH 40V 60A 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 75W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 60A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 2128pF @ 25V
Rds On (Max) @ Id, Vgs: 3mOhm @ 30A, 10V
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 25µA
Supplier Device Package: PG-TDSON-8-56
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 4685 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| IAUC60N04S6L030HATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 40V 60A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 75W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 60A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 2128pF @ 25V
Rds On (Max) @ Id, Vgs: 3mOhm @ 30A, 10V
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 25µA
Supplier Device Package: PG-TDSON-8-56
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N-CH 40V 60A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 75W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 60A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 2128pF @ 25V
Rds On (Max) @ Id, Vgs: 3mOhm @ 30A, 10V
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 25µA
Supplier Device Package: PG-TDSON-8-56
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 4685 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 75.17 грн |
| 10+ | 67.22 грн |
| 100+ | 61.42 грн |
| 500+ | 54.87 грн |
| 1000+ | 53.77 грн |
































