Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (149687) > Сторінка 454 з 2495
| Фото | Назва | Виробник | Інформація |
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IPP80R1K2P7 | Infineon Technologies |
Description: IPP80R1K2 - 800V COOLMOS N-CHANNPackaging: Bulk Part Status: Active |
на замовлення 980 шт: термін постачання 21-31 дні (днів) |
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IPP80R1K4P7 | Infineon Technologies |
Description: IPP80R1K4 - 800V COOLMOS N-CHANNPackaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.4A, 10V Power Dissipation (Max): 32W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 70µA Supplier Device Package: PG-TO220-3-1 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 500 V |
товару немає в наявності |
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| IPP80R750P7 | Infineon Technologies |
Description: IPP80R750 - 800V COOLMOS N-CHANN Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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IPI12CNE8N G | Infineon Technologies |
Description: MOSFET N-CH 85V 67A TO262-3 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BC 856B E6433 | Infineon Technologies |
Description: TRANS PNP 65V 0.1A SOT23Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V Frequency - Transition: 250MHz Supplier Device Package: PG-SOT23 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 65 V Power - Max: 330 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TLI4970-D050T4 | Infineon Technologies | Description: TLI4970 - MAGNETIC CURRENT SENSO |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TLI4970-D050T5XUMA1 | Infineon Technologies |
Description: MAGNETIC SWITCH CURRENT SENSOR |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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TLI4970D050T4 | Infineon Technologies | Description: MAGNETIC SWITCH CURRENT SENSOR |
на замовлення 384 шт: термін постачання 21-31 дні (днів) |
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| TLI4970050 | Infineon Technologies |
Description: DEV KIT Packaging: Bulk Interface: Serial, SPI Voltage - Supply: 3.1V ~ 3.5V Sensor Type: Current Sensor Utilized IC / Part: TLI4970-D050T4, XMC1100 Supplied Contents: Board(s) Embedded: Yes, MCU, 32-Bit Sensing Range: 50A Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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TLI4970D050T4XUMA1 | Infineon Technologies |
Description: SENSOR CURRENT HALL 50A 8TISONPackaging: Bulk Package / Case: 8-PowerTDFN Polarization: Bidirectional Mounting Type: Surface Mount Output: SPI Frequency: DC ~ 18kHz Accuracy: ±0.05% Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3.1V ~ 3.5V Response Time: 57µs Sensor Type: Hall Effect, Differential Linearity: ±1.6% For Measuring: AC/DC Current - Supply (Max): 20mA Current - Sensing: 50A Supplier Device Package: PG-TISON-8-1 Grade: Automotive Number of Channels: 1 Qualification: AEC-Q100 |
на замовлення 46099 шт: термін постачання 21-31 дні (днів) |
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TLI4970D025T4XUMA1 | Infineon Technologies |
Description: SENSOR CURRENT HALL 25A 8TISONPackaging: Bulk Package / Case: 8-PowerTDFN Polarization: Unidirectional Mounting Type: Surface Mount Output: SPI Frequency: DC ~ 18kHz Accuracy: ±2% Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3.1V ~ 3.5V Response Time: 57µs Sensor Type: Hall Effect, Differential Linearity: ±1.6% For Measuring: AC/DC Current - Supply (Max): 20mA Current - Sensing: 25A Supplier Device Package: PG-TISON-8-1 Grade: Automotive Number of Channels: 1 Qualification: AEC-Q100 |
на замовлення 144 шт: термін постачання 21-31 дні (днів) |
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TLI4970D050T5XUMA1 | Infineon Technologies |
Description: SENSOR CURRENT HALL 50A 8TISONPackaging: Bulk Package / Case: 8-PowerTDFN Polarization: Unidirectional Mounting Type: Surface Mount Output: SPI Frequency: DC ~ 18kHz Accuracy: ±0.05% Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3.1V ~ 3.5V Response Time: 57µs Sensor Type: Hall Effect, Differential Linearity: ±1.6% For Measuring: AC/DC Current - Supply (Max): 20mA Current - Sensing: 50A Supplier Device Package: PG-TISON-8-1 Grade: Automotive Number of Channels: 1 Qualification: AEC-Q100 |
на замовлення 1463 шт: термін постачання 21-31 дні (днів) |
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SHIELDBTS500251TEATOBO1 | Infineon Technologies |
Description: SHIELD_BTS50025-1TEAPackaging: Bulk Function: Switch Type: Power Management Contents: Board(s) Utilized IC / Part: BTS50025-1TEA Platform: Arduino Part Status: Active |
на замовлення 3 шт: термін постачання 21-31 дні (днів) |
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IAUA250N04S6N007AUMA1 | Infineon Technologies |
Description: MOSFET_(20V 40V) PG-HSOF-5 Packaging: Tape & Reel (TR) Package / Case: 5-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 435A (Tj) Rds On (Max) @ Id, Vgs: 0.7mOhm @ 100A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 3V @ 130µA Supplier Device Package: PG-HSOF-5-4 Grade: Automotive Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9898 pF @ 25 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IAUA250N04S6N007AUMA1 | Infineon Technologies |
Description: MOSFET_(20V 40V) PG-HSOF-5 Packaging: Cut Tape (CT) Package / Case: 5-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 435A (Tj) Rds On (Max) @ Id, Vgs: 0.7mOhm @ 100A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 3V @ 130µA Supplier Device Package: PG-HSOF-5-4 Grade: Automotive Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9898 pF @ 25 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BSS127IXTSA1 | Infineon Technologies |
Description: SMALL SIGNAL MOSFETS PG-SOT23-3Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21mA (Ta) Rds On (Max) @ Id, Vgs: 500Ohm @ 16mA, 10V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 2.6V @ 8µA Supplier Device Package: PG-SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 0.65 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 21 pF @ 25 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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BSS127IXTSA1 | Infineon Technologies |
Description: SMALL SIGNAL MOSFETS PG-SOT23-3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21mA (Ta) Rds On (Max) @ Id, Vgs: 500Ohm @ 16mA, 10V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 2.6V @ 8µA Supplier Device Package: PG-SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 0.65 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 21 pF @ 25 V |
на замовлення 4338 шт: термін постачання 21-31 дні (днів) |
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BTS244ZE3062ANTMA1 | Infineon Technologies |
Description: BTS244 - TEMPFET, AUTOMOTIVE LOWPackaging: Bulk Package / Case: TO-263-5, D²Pak (4 Leads + Tab), TO-263BB Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 13mOhm @ 19A, 10V Power Dissipation (Max): 170W (Tc) Vgs(th) (Max) @ Id: 2V @ 130µA Supplier Device Package: PG-TO263-5-2 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2660 pF @ 25 V |
на замовлення 24500 шт: термін постачання 21-31 дні (днів) |
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IR3513MTRPBF | Infineon Technologies |
Description: IC XPHASE3 CONTROL 32-MLPQPackaging: Cut Tape (CT) Package / Case: 32-VFQFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: 0°C ~ 125°C Voltage - Supply: 8V ~ 16V Applications: Processor Current - Supply: 3mA Supplier Device Package: 32-MLPQ (5x5) |
на замовлення 2860 шт: термін постачання 21-31 дні (днів) |
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AUIR3242SBOARDB2BTOBO1 | Infineon Technologies |
Description: EVAL BOARD FOR AUIR3242SPackaging: Bulk Function: Power Distribution Switch (Load Switch) Type: Power Management Contents: Board(s) Utilized IC / Part: AUIR3242S Supplied Contents: Board(s) Secondary Attributes: On-Board Test Points Embedded: No Part Status: Active |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
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| EVALM3CM615PNTOBO2 | Infineon Technologies | Description: EVAL BOARD FOR IFCM15P60GD |
на замовлення 3 шт: термін постачання 21-31 дні (днів) |
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| BCR119SH6327 | Infineon Technologies |
Description: BIPOLAR DIGITAL TRANSISTORPackaging: Bulk Package / Case: 6-VSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 250mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V Frequency - Transition: 150MHz Resistor - Base (R1): 4.7kOhms Supplier Device Package: PG-SOT363-6-1 Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| BCR119S | Infineon Technologies |
Description: SMALL SIGNAL BIPOLAR TRANSISTORPackaging: Bulk Package / Case: 6-VSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 250mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V Frequency - Transition: 150MHz Resistor - Base (R1): 4.7kOhms Supplier Device Package: PG-SOT363-6-1 Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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BCR119SH6327XTSA1 | Infineon Technologies |
Description: TRANS 2NPN PREBIAS 0.25W SOT363Packaging: Bulk Package / Case: 6-VSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 250mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V Frequency - Transition: 150MHz Resistor - Base (R1): 4.7kOhms Supplier Device Package: PG-SOT363-PO Part Status: Last Time Buy |
на замовлення 17800 шт: термін постачання 21-31 дні (днів) |
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BCR 114T E6327 | Infineon Technologies |
Description: TRANS PREBIAS NPN 250MW SC75 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BCR 114L3 E6327 | Infineon Technologies |
Description: TRANS PREBIAS NPN 250MW TSLP-3 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BCR 114F E6327 | Infineon Technologies |
Description: TRANS PREBIAS NPN 250MW TSFP-3 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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CY8C20045-24LKXIT | Infineon Technologies |
Description: IC CAPSENSE 8K FLASH 16 QFNPackaging: Tape & Reel (TR) Package / Case: 16-UFQFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.71V ~ 5.5V Controller Series: CY8C20045 Applications: Capacitive Sensing Core Processor: M8C Supplier Device Package: 16-QFN (3x3) DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| BA89502VH6327XTSA1 | Infineon Technologies |
Description: DIODE GEN PURP SC79-2Packaging: Bulk Part Status: Obsolete |
на замовлення 16350 шт: термін постачання 21-31 дні (днів) |
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TLE4929CXHAM18NHAMA1 | Infineon Technologies |
Description: SPEED & CURRENT SENSORSFeatures: Programmable, Temperature Compensated Packaging: Tape & Reel (TR) Package / Case: 3-SSIP Module Output Type: Open Drain Mounting Type: Through Hole Axis: Single Operating Temperature: -40°C ~ 175°C (TJ) Voltage - Supply: 4V ~ 16V Technology: Hall Effect Resolution: 16 b Sensing Range: ±120mT Current - Output (Max): 15mA Current - Supply (Max): 13.4mA Supplier Device Package: PG-SSO-3-53 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TLE4929CXHAM18NHAMA1 | Infineon Technologies |
Description: SPEED & CURRENT SENSORSFeatures: Programmable, Temperature Compensated Packaging: Cut Tape (CT) Package / Case: 3-SSIP Module Output Type: Open Drain Mounting Type: Through Hole Axis: Single Operating Temperature: -40°C ~ 175°C (TJ) Voltage - Supply: 4V ~ 16V Technology: Hall Effect Resolution: 16 b Sensing Range: ±120mT Current - Output (Max): 15mA Current - Supply (Max): 13.4mA Supplier Device Package: PG-SSO-3-53 |
на замовлення 594 шт: термін постачання 21-31 дні (днів) |
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IGI60F1414A1LAUMA1 | Infineon Technologies |
Description: IC HALF BRIDGE DRIVER 28TIQFNPackaging: Tape & Reel (TR) Package / Case: 28-PowerTQFN Mounting Type: Surface Mount Interface: Logic, PWM Output Configuration: Half Bridge (2) Rds On (Typ): 140mOhm LS, 140mOhm HS Applications: General Purpose Supplier Device Package: PG-TIQFN-28-1 Load Type: Inductive, Resistive Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IMC302AF064XUMA1 | Infineon Technologies |
Description: IC MCU 32BIT 128KB FLASH 64LQFPPackaging: Cut Tape (CT) Package / Case: 64-LQFP Mounting Type: Surface Mount RAM Size: 16K x 8 Operating Temperature: -40°C ~ 105°C (TA) Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0 Supplier Device Package: 64-QFP (10x10) Number of I/O: 41 DigiKey Programmable: Not Verified |
на замовлення 235 шт: термін постачання 21-31 дні (днів) |
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IMC301AF064XUMA1 | Infineon Technologies |
Description: IC MCU 32BIT 128KB FLASH 64LQFPPackaging: Cut Tape (CT) Package / Case: 64-LQFP Mounting Type: Surface Mount Speed: 48MHz Program Memory Size: 128KB (128K x 8) RAM Size: 16K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: External, Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0 Data Converters: A/D 7x12b, D/A 7x1b Sigma-Delta Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V Connectivity: CANbus, I²C, LINbus, SPI, UART/USART, USI Peripherals: Brown-out Detect/Reset, I²S, LED, POR, PWM, WDT Supplier Device Package: 64-QFP (10x10) Part Status: Active Number of I/O: 41 |
на замовлення 1800 шт: термін постачання 21-31 дні (днів) |
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SAF-XC886CM-6FFI 5V AC | Infineon Technologies |
Description: IC MCU 8BIT 24KB FLASH 48TQFPPackaging: Tape & Reel (TR) Package / Case: 48-LQFP Mounting Type: Surface Mount Speed: 24MHz Program Memory Size: 24KB (24K x 8) RAM Size: 1.75K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: XC800 Data Converters: A/D 8x10b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V Connectivity: CANbus, SSI, UART/USART Peripherals: Brown-out Detect/Reset, POR, PWM, WDT Supplier Device Package: PG-TQFP-48 Part Status: Obsolete Number of I/O: 34 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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ISC0603NLSATMA1 | Infineon Technologies |
Description: MOSFET N-CH 80V 12.3A/56A TDSONPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12.3A (Ta), 56A (Tc) Rds On (Max) @ Id, Vgs: 8.9mOhm @ 20A, 10V Power Dissipation (Max): 2.5W (Ta), 52W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 24µA Supplier Device Package: PG-TDSON-8-6 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 40 V |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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ISC0603NLSATMA1 | Infineon Technologies |
Description: MOSFET N-CH 80V 12.3A/56A TDSONPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12.3A (Ta), 56A (Tc) Rds On (Max) @ Id, Vgs: 8.9mOhm @ 20A, 10V Power Dissipation (Max): 2.5W (Ta), 52W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 24µA Supplier Device Package: PG-TDSON-8-6 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 40 V |
на замовлення 6987 шт: термін постачання 21-31 дні (днів) |
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ISC0602NLSATMA1 | Infineon Technologies |
Description: MOSFET N-CH 80V 14A/66A TDSON-8Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 66A (Tc) Rds On (Max) @ Id, Vgs: 7.3mOhm @ 20A, 10V Power Dissipation (Max): 2.5W (Ta), 60W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 29µA Supplier Device Package: PG-TDSON-8-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 40 V |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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ISC0602NLSATMA1 | Infineon Technologies |
Description: MOSFET N-CH 80V 14A/66A TDSON-8Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 66A (Tc) Rds On (Max) @ Id, Vgs: 7.3mOhm @ 20A, 10V Power Dissipation (Max): 2.5W (Ta), 60W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 29µA Supplier Device Package: PG-TDSON-8-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 40 V |
на замовлення 10539 шт: термін постачання 21-31 дні (днів) |
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ISC0805NLSATMA1 | Infineon Technologies |
Description: MOSFET N-CH 100V 13A/71A TDSONPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 71A (Tc) Rds On (Max) @ Id, Vgs: 7.8mOhm @ 50A, 10V Power Dissipation (Max): 2.5W (Ta), 74W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 40µA Supplier Device Package: PG-TDSON-8-46 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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ISC0805NLSATMA1 | Infineon Technologies |
Description: MOSFET N-CH 100V 13A/71A TDSONPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 71A (Tc) Rds On (Max) @ Id, Vgs: 7.8mOhm @ 50A, 10V Power Dissipation (Max): 2.5W (Ta), 74W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 40µA Supplier Device Package: PG-TDSON-8-46 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 50 V |
на замовлення 3394 шт: термін постачання 21-31 дні (днів) |
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ISC0806NLSATMA1 | Infineon Technologies |
Description: MOSFET N-CH 100V 16A/97A TDSONPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 97A (Tc) Rds On (Max) @ Id, Vgs: 5.4mOhm @ 50A, 10V Power Dissipation (Max): 2.5W (Ta), 96W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 61µA Supplier Device Package: PG-TDSON-8-7 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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ISC0806NLSATMA1 | Infineon Technologies |
Description: MOSFET N-CH 100V 16A/97A TDSONPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 97A (Tc) Rds On (Max) @ Id, Vgs: 5.4mOhm @ 50A, 10V Power Dissipation (Max): 2.5W (Ta), 96W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 61µA Supplier Device Package: PG-TDSON-8-7 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 50 V |
на замовлення 4756 шт: термін постачання 21-31 дні (днів) |
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| DD800S17H4_B2 | Infineon Technologies |
Description: DDXS17F - RECTIFIER DIODE MODULE |
на замовлення 112 шт: термін постачання 21-31 дні (днів) |
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| DD800S17HA_B2 | Infineon Technologies |
Description: RECTIFIER DIODE MODULEPackaging: Bulk |
на замовлення 18 шт: термін постачання 21-31 дні (днів) |
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AUIRF7648M2TR | Infineon Technologies |
Description: MOSFET N-CH 60V 14A DIRECTFETPackaging: Tape & Reel (TR) Package / Case: DirectFET™ Isometric M4 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 68A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 41A, 10V Power Dissipation (Max): 2.5W (Ta), 63W (Tc) Vgs(th) (Max) @ Id: 4.9V @ 150µA Supplier Device Package: DirectFET™ Isometric M4 Grade: Automotive Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2170 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 4800 шт: термін постачання 21-31 дні (днів) |
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AUIRF7648M2TR | Infineon Technologies |
Description: MOSFET N-CH 60V 14A DIRECTFETPackaging: Cut Tape (CT) Package / Case: DirectFET™ Isometric M4 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 68A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 41A, 10V Power Dissipation (Max): 2.5W (Ta), 63W (Tc) Vgs(th) (Max) @ Id: 4.9V @ 150µA Supplier Device Package: DirectFET™ Isometric M4 Grade: Automotive Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2170 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 9399 шт: термін постачання 21-31 дні (днів) |
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BAT54-04E6327 | Infineon Technologies |
Description: RECTIFIER DIODE, SCHOTTKY |
на замовлення 45000 шт: термін постачання 21-31 дні (днів) |
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| BAT54-06E6327 | Infineon Technologies |
Description: RECTIFIER DIODE, SCHOTTKYPackaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 5 ns Technology: Schottky Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 200mA (DC) Supplier Device Package: PG-SOT23-3-3 Operating Temperature - Junction: 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA Current - Reverse Leakage @ Vr: 2 µA @ 25 V |
на замовлення 163000 шт: термін постачання 21-31 дні (днів) |
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BAT54-05E6327 | Infineon Technologies |
Description: SCHOTTKY DIODEPackaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 5 ns Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 200mA (DC) Supplier Device Package: PG-SOT23-3-3 Operating Temperature - Junction: 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA Current - Reverse Leakage @ Vr: 2 µA @ 25 V |
на замовлення 41151 шт: термін постачання 21-31 дні (днів) |
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T3800N16TOFVTXPSA1 | Infineon Technologies |
Description: SCR MODULE 1.8KV 5970A TO-200AEPackaging: Tray Package / Case: TO-200AE Mounting Type: Chassis Mount Operating Temperature: 135°C (TJ) Structure: Single Current - Hold (Ih) (Max): 300 mA Current - Gate Trigger (Igt) (Max): 250 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 63000A @ 50Hz Number of SCRs, Diodes: 1 SCR Current - On State (It (AV)) (Max): 3800 A Voltage - Gate Trigger (Vgt) (Max): 2.5 V Part Status: Active Current - On State (It (RMS)) (Max): 5970 A Voltage - Off State: 1.8 kV |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TLE4253EXUMA2 | Infineon Technologies |
Description: IC REG LINEAR POS ADJ 8DSO-27Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Output Type: Adjustable Mounting Type: Surface Mount Current - Output: 250mA Operating Temperature: -40°C ~ 150°C Output Configuration: Positive Current - Quiescent (Iq): 150 µA Voltage - Input (Max): 40V Number of Regulators: 1 Supplier Device Package: PG-DSO-8-27 Voltage - Output (Min/Fixed): Tracking Control Features: Enable Grade: Automotive Part Status: Active PSRR: 60dB (100Hz) Voltage Dropout (Max): 0.6V @ 200mA Protection Features: Over Temperature, Reverse Polarity, Short Circuit Current - Supply (Max): 15 mA Qualification: AEC-Q100 |
на замовлення 11595 шт: термін постачання 21-31 дні (днів) |
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TLE4253GSXUMA4 | Infineon Technologies |
Description: IC REG LINEAR POS ADJ 8DSOPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: Adjustable Mounting Type: Surface Mount Current - Output: 250mA Operating Temperature: -40°C ~ 150°C Output Configuration: Positive Current - Quiescent (Iq): 150 µA Voltage - Input (Max): 40V Number of Regulators: 1 Supplier Device Package: PG-DSO-8 Voltage - Output (Min/Fixed): Tracking Control Features: Enable Grade: Automotive PSRR: 60dB (100Hz) Voltage Dropout (Max): 0.6V @ 200mA Protection Features: Over Temperature, Reverse Polarity, Short Circuit Current - Supply (Max): 15 mA Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TLE4253GSXUMA1 | Infineon Technologies |
Description: IC REG LINEAR POS ADJ 250MA DSO8Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: Adjustable Mounting Type: Surface Mount Current - Output: 250mA Operating Temperature: -40°C ~ 150°C Output Configuration: Positive Current - Quiescent (Iq): 150 µA Voltage - Input (Max): 40V Number of Regulators: 1 Supplier Device Package: PG-DSO-8 Voltage - Output (Min/Fixed): Tracking Control Features: Enable Grade: Automotive PSRR: 60dB (100Hz) Voltage Dropout (Max): 0.6V @ 200mA Protection Features: Over Temperature, Reverse Polarity, Short Circuit Current - Supply (Max): 15 mA Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TLE4253GSXUMA1 | Infineon Technologies |
Description: IC REG LINEAR POS ADJ 250MA DSO8Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: Adjustable Mounting Type: Surface Mount Current - Output: 250mA Operating Temperature: -40°C ~ 150°C Output Configuration: Positive Current - Quiescent (Iq): 150 µA Voltage - Input (Max): 40V Number of Regulators: 1 Supplier Device Package: PG-DSO-8 Voltage - Output (Min/Fixed): Tracking Control Features: Enable Grade: Automotive PSRR: 60dB (100Hz) Voltage Dropout (Max): 0.6V @ 200mA Protection Features: Over Temperature, Reverse Polarity, Short Circuit Current - Supply (Max): 15 mA Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BCR583E6327HTSA1 | Infineon Technologies |
Description: TRANS PREBIASPackaging: Bulk |
на замовлення 521602 шт: термін постачання 21-31 дні (днів) |
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IPLK80R750P7ATMA1 | Infineon Technologies |
Description: MOSFET 800V TDSON-8Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) Supplier Device Package: PG-TDSON-8 Part Status: Active Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IPLK80R750P7ATMA1 | Infineon Technologies |
Description: MOSFET 800V TDSON-8Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) Supplier Device Package: PG-TDSON-8 Part Status: Active Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V |
на замовлення 1596 шт: термін постачання 21-31 дні (днів) |
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IPLK70R750P7ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 700V TDSON-8Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Supplier Device Package: PG-TDSON-8 Part Status: Active Drain to Source Voltage (Vdss): 700 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IPLK70R750P7ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 700V TDSON-8Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Supplier Device Package: PG-TDSON-8 Part Status: Active Drain to Source Voltage (Vdss): 700 V |
товару немає в наявності |
В кошику од. на суму грн. |
| IPP80R1K2P7 |
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Виробник: Infineon Technologies
Description: IPP80R1K2 - 800V COOLMOS N-CHANN
Packaging: Bulk
Part Status: Active
Description: IPP80R1K2 - 800V COOLMOS N-CHANN
Packaging: Bulk
Part Status: Active
на замовлення 980 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 480+ | 47.22 грн |
| IPP80R1K4P7 |
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Виробник: Infineon Technologies
Description: IPP80R1K4 - 800V COOLMOS N-CHANN
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.4A, 10V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 70µA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 500 V
Description: IPP80R1K4 - 800V COOLMOS N-CHANN
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.4A, 10V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 70µA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 500 V
товару немає в наявності
В кошику
од. на суму грн.
| IPI12CNE8N G |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 85V 67A TO262-3
Description: MOSFET N-CH 85V 67A TO262-3
товару немає в наявності
В кошику
од. на суму грн.
| BC 856B E6433 |
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Виробник: Infineon Technologies
Description: TRANS PNP 65V 0.1A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 330 mW
Description: TRANS PNP 65V 0.1A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 330 mW
товару немає в наявності
В кошику
од. на суму грн.
| TLI4970-D050T4 |
Виробник: Infineon Technologies
Description: TLI4970 - MAGNETIC CURRENT SENSO
Description: TLI4970 - MAGNETIC CURRENT SENSO
товару немає в наявності
В кошику
од. на суму грн.
| TLI4970-D050T5XUMA1 |
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Виробник: Infineon Technologies
Description: MAGNETIC SWITCH CURRENT SENSOR
Description: MAGNETIC SWITCH CURRENT SENSOR
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 57+ | 415.25 грн |
| TLI4970D050T4 |
Виробник: Infineon Technologies
Description: MAGNETIC SWITCH CURRENT SENSOR
Description: MAGNETIC SWITCH CURRENT SENSOR
на замовлення 384 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 48+ | 473.46 грн |
| TLI4970050 |
Виробник: Infineon Technologies
Description: DEV KIT
Packaging: Bulk
Interface: Serial, SPI
Voltage - Supply: 3.1V ~ 3.5V
Sensor Type: Current Sensor
Utilized IC / Part: TLI4970-D050T4, XMC1100
Supplied Contents: Board(s)
Embedded: Yes, MCU, 32-Bit
Sensing Range: 50A
Part Status: Active
Description: DEV KIT
Packaging: Bulk
Interface: Serial, SPI
Voltage - Supply: 3.1V ~ 3.5V
Sensor Type: Current Sensor
Utilized IC / Part: TLI4970-D050T4, XMC1100
Supplied Contents: Board(s)
Embedded: Yes, MCU, 32-Bit
Sensing Range: 50A
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
| TLI4970D050T4XUMA1 |
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Виробник: Infineon Technologies
Description: SENSOR CURRENT HALL 50A 8TISON
Packaging: Bulk
Package / Case: 8-PowerTDFN
Polarization: Bidirectional
Mounting Type: Surface Mount
Output: SPI
Frequency: DC ~ 18kHz
Accuracy: ±0.05%
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.1V ~ 3.5V
Response Time: 57µs
Sensor Type: Hall Effect, Differential
Linearity: ±1.6%
For Measuring: AC/DC
Current - Supply (Max): 20mA
Current - Sensing: 50A
Supplier Device Package: PG-TISON-8-1
Grade: Automotive
Number of Channels: 1
Qualification: AEC-Q100
Description: SENSOR CURRENT HALL 50A 8TISON
Packaging: Bulk
Package / Case: 8-PowerTDFN
Polarization: Bidirectional
Mounting Type: Surface Mount
Output: SPI
Frequency: DC ~ 18kHz
Accuracy: ±0.05%
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.1V ~ 3.5V
Response Time: 57µs
Sensor Type: Hall Effect, Differential
Linearity: ±1.6%
For Measuring: AC/DC
Current - Supply (Max): 20mA
Current - Sensing: 50A
Supplier Device Package: PG-TISON-8-1
Grade: Automotive
Number of Channels: 1
Qualification: AEC-Q100
на замовлення 46099 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 44+ | 537.57 грн |
| TLI4970D025T4XUMA1 |
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Виробник: Infineon Technologies
Description: SENSOR CURRENT HALL 25A 8TISON
Packaging: Bulk
Package / Case: 8-PowerTDFN
Polarization: Unidirectional
Mounting Type: Surface Mount
Output: SPI
Frequency: DC ~ 18kHz
Accuracy: ±2%
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.1V ~ 3.5V
Response Time: 57µs
Sensor Type: Hall Effect, Differential
Linearity: ±1.6%
For Measuring: AC/DC
Current - Supply (Max): 20mA
Current - Sensing: 25A
Supplier Device Package: PG-TISON-8-1
Grade: Automotive
Number of Channels: 1
Qualification: AEC-Q100
Description: SENSOR CURRENT HALL 25A 8TISON
Packaging: Bulk
Package / Case: 8-PowerTDFN
Polarization: Unidirectional
Mounting Type: Surface Mount
Output: SPI
Frequency: DC ~ 18kHz
Accuracy: ±2%
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.1V ~ 3.5V
Response Time: 57µs
Sensor Type: Hall Effect, Differential
Linearity: ±1.6%
For Measuring: AC/DC
Current - Supply (Max): 20mA
Current - Sensing: 25A
Supplier Device Package: PG-TISON-8-1
Grade: Automotive
Number of Channels: 1
Qualification: AEC-Q100
на замовлення 144 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 52+ | 454.64 грн |
| TLI4970D050T5XUMA1 |
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Виробник: Infineon Technologies
Description: SENSOR CURRENT HALL 50A 8TISON
Packaging: Bulk
Package / Case: 8-PowerTDFN
Polarization: Unidirectional
Mounting Type: Surface Mount
Output: SPI
Frequency: DC ~ 18kHz
Accuracy: ±0.05%
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.1V ~ 3.5V
Response Time: 57µs
Sensor Type: Hall Effect, Differential
Linearity: ±1.6%
For Measuring: AC/DC
Current - Supply (Max): 20mA
Current - Sensing: 50A
Supplier Device Package: PG-TISON-8-1
Grade: Automotive
Number of Channels: 1
Qualification: AEC-Q100
Description: SENSOR CURRENT HALL 50A 8TISON
Packaging: Bulk
Package / Case: 8-PowerTDFN
Polarization: Unidirectional
Mounting Type: Surface Mount
Output: SPI
Frequency: DC ~ 18kHz
Accuracy: ±0.05%
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.1V ~ 3.5V
Response Time: 57µs
Sensor Type: Hall Effect, Differential
Linearity: ±1.6%
For Measuring: AC/DC
Current - Supply (Max): 20mA
Current - Sensing: 50A
Supplier Device Package: PG-TISON-8-1
Grade: Automotive
Number of Channels: 1
Qualification: AEC-Q100
на замовлення 1463 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 52+ | 454.64 грн |
| SHIELDBTS500251TEATOBO1 |
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Виробник: Infineon Technologies
Description: SHIELD_BTS50025-1TEA
Packaging: Bulk
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTS50025-1TEA
Platform: Arduino
Part Status: Active
Description: SHIELD_BTS50025-1TEA
Packaging: Bulk
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTS50025-1TEA
Platform: Arduino
Part Status: Active
на замовлення 3 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 4084.52 грн |
| IAUA250N04S6N007AUMA1 |
Виробник: Infineon Technologies
Description: MOSFET_(20V 40V) PG-HSOF-5
Packaging: Tape & Reel (TR)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 435A (Tj)
Rds On (Max) @ Id, Vgs: 0.7mOhm @ 100A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 3V @ 130µA
Supplier Device Package: PG-HSOF-5-4
Grade: Automotive
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9898 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET_(20V 40V) PG-HSOF-5
Packaging: Tape & Reel (TR)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 435A (Tj)
Rds On (Max) @ Id, Vgs: 0.7mOhm @ 100A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 3V @ 130µA
Supplier Device Package: PG-HSOF-5-4
Grade: Automotive
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9898 pF @ 25 V
Qualification: AEC-Q101
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| IAUA250N04S6N007AUMA1 |
Виробник: Infineon Technologies
Description: MOSFET_(20V 40V) PG-HSOF-5
Packaging: Cut Tape (CT)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 435A (Tj)
Rds On (Max) @ Id, Vgs: 0.7mOhm @ 100A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 3V @ 130µA
Supplier Device Package: PG-HSOF-5-4
Grade: Automotive
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9898 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET_(20V 40V) PG-HSOF-5
Packaging: Cut Tape (CT)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 435A (Tj)
Rds On (Max) @ Id, Vgs: 0.7mOhm @ 100A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 3V @ 130µA
Supplier Device Package: PG-HSOF-5-4
Grade: Automotive
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9898 pF @ 25 V
Qualification: AEC-Q101
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| BSS127IXTSA1 |
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Виробник: Infineon Technologies
Description: SMALL SIGNAL MOSFETS PG-SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21mA (Ta)
Rds On (Max) @ Id, Vgs: 500Ohm @ 16mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.6V @ 8µA
Supplier Device Package: PG-SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 0.65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 21 pF @ 25 V
Description: SMALL SIGNAL MOSFETS PG-SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21mA (Ta)
Rds On (Max) @ Id, Vgs: 500Ohm @ 16mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.6V @ 8µA
Supplier Device Package: PG-SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 0.65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 21 pF @ 25 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 4.70 грн |
| BSS127IXTSA1 |
![]() |
Виробник: Infineon Technologies
Description: SMALL SIGNAL MOSFETS PG-SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21mA (Ta)
Rds On (Max) @ Id, Vgs: 500Ohm @ 16mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.6V @ 8µA
Supplier Device Package: PG-SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 0.65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 21 pF @ 25 V
Description: SMALL SIGNAL MOSFETS PG-SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21mA (Ta)
Rds On (Max) @ Id, Vgs: 500Ohm @ 16mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.6V @ 8µA
Supplier Device Package: PG-SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 0.65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 21 pF @ 25 V
на замовлення 4338 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 15+ | 23.02 грн |
| 26+ | 12.51 грн |
| 100+ | 6.52 грн |
| 500+ | 5.91 грн |
| 1000+ | 5.24 грн |
| BTS244ZE3062ANTMA1 |
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Виробник: Infineon Technologies
Description: BTS244 - TEMPFET, AUTOMOTIVE LOW
Packaging: Bulk
Package / Case: TO-263-5, D²Pak (4 Leads + Tab), TO-263BB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 19A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 2V @ 130µA
Supplier Device Package: PG-TO263-5-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2660 pF @ 25 V
Description: BTS244 - TEMPFET, AUTOMOTIVE LOW
Packaging: Bulk
Package / Case: TO-263-5, D²Pak (4 Leads + Tab), TO-263BB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 19A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 2V @ 130µA
Supplier Device Package: PG-TO263-5-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2660 pF @ 25 V
на замовлення 24500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 670+ | 37.00 грн |
| IR3513MTRPBF |
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Виробник: Infineon Technologies
Description: IC XPHASE3 CONTROL 32-MLPQ
Packaging: Cut Tape (CT)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 125°C
Voltage - Supply: 8V ~ 16V
Applications: Processor
Current - Supply: 3mA
Supplier Device Package: 32-MLPQ (5x5)
Description: IC XPHASE3 CONTROL 32-MLPQ
Packaging: Cut Tape (CT)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 125°C
Voltage - Supply: 8V ~ 16V
Applications: Processor
Current - Supply: 3mA
Supplier Device Package: 32-MLPQ (5x5)
на замовлення 2860 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 291.87 грн |
| 10+ | 239.41 грн |
| 25+ | 224.53 грн |
| 100+ | 200.04 грн |
| AUIR3242SBOARDB2BTOBO1 |
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Виробник: Infineon Technologies
Description: EVAL BOARD FOR AUIR3242S
Packaging: Bulk
Function: Power Distribution Switch (Load Switch)
Type: Power Management
Contents: Board(s)
Utilized IC / Part: AUIR3242S
Supplied Contents: Board(s)
Secondary Attributes: On-Board Test Points
Embedded: No
Part Status: Active
Description: EVAL BOARD FOR AUIR3242S
Packaging: Bulk
Function: Power Distribution Switch (Load Switch)
Type: Power Management
Contents: Board(s)
Utilized IC / Part: AUIR3242S
Supplied Contents: Board(s)
Secondary Attributes: On-Board Test Points
Embedded: No
Part Status: Active
на замовлення 1 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 10778.59 грн |
| EVALM3CM615PNTOBO2 |
Виробник: Infineon Technologies
Description: EVAL BOARD FOR IFCM15P60GD
Description: EVAL BOARD FOR IFCM15P60GD
на замовлення 3 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 9173.72 грн |
| BCR119SH6327 |
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Виробник: Infineon Technologies
Description: BIPOLAR DIGITAL TRANSISTOR
Packaging: Bulk
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
Frequency - Transition: 150MHz
Resistor - Base (R1): 4.7kOhms
Supplier Device Package: PG-SOT363-6-1
Part Status: Active
Description: BIPOLAR DIGITAL TRANSISTOR
Packaging: Bulk
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
Frequency - Transition: 150MHz
Resistor - Base (R1): 4.7kOhms
Supplier Device Package: PG-SOT363-6-1
Part Status: Active
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| BCR119S |
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Виробник: Infineon Technologies
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Packaging: Bulk
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
Frequency - Transition: 150MHz
Resistor - Base (R1): 4.7kOhms
Supplier Device Package: PG-SOT363-6-1
Part Status: Active
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Packaging: Bulk
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
Frequency - Transition: 150MHz
Resistor - Base (R1): 4.7kOhms
Supplier Device Package: PG-SOT363-6-1
Part Status: Active
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| BCR119SH6327XTSA1 |
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Виробник: Infineon Technologies
Description: TRANS 2NPN PREBIAS 0.25W SOT363
Packaging: Bulk
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
Frequency - Transition: 150MHz
Resistor - Base (R1): 4.7kOhms
Supplier Device Package: PG-SOT363-PO
Part Status: Last Time Buy
Description: TRANS 2NPN PREBIAS 0.25W SOT363
Packaging: Bulk
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
Frequency - Transition: 150MHz
Resistor - Base (R1): 4.7kOhms
Supplier Device Package: PG-SOT363-PO
Part Status: Last Time Buy
на замовлення 17800 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5352+ | 4.70 грн |
| BCR 114T E6327 |
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Виробник: Infineon Technologies
Description: TRANS PREBIAS NPN 250MW SC75
Description: TRANS PREBIAS NPN 250MW SC75
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| BCR 114L3 E6327 |
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Виробник: Infineon Technologies
Description: TRANS PREBIAS NPN 250MW TSLP-3
Description: TRANS PREBIAS NPN 250MW TSLP-3
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| BCR 114F E6327 |
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Виробник: Infineon Technologies
Description: TRANS PREBIAS NPN 250MW TSFP-3
Description: TRANS PREBIAS NPN 250MW TSFP-3
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| CY8C20045-24LKXIT |
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Виробник: Infineon Technologies
Description: IC CAPSENSE 8K FLASH 16 QFN
Packaging: Tape & Reel (TR)
Package / Case: 16-UFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.71V ~ 5.5V
Controller Series: CY8C20045
Applications: Capacitive Sensing
Core Processor: M8C
Supplier Device Package: 16-QFN (3x3)
DigiKey Programmable: Not Verified
Description: IC CAPSENSE 8K FLASH 16 QFN
Packaging: Tape & Reel (TR)
Package / Case: 16-UFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.71V ~ 5.5V
Controller Series: CY8C20045
Applications: Capacitive Sensing
Core Processor: M8C
Supplier Device Package: 16-QFN (3x3)
DigiKey Programmable: Not Verified
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| BA89502VH6327XTSA1 |
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Виробник: Infineon Technologies
Description: DIODE GEN PURP SC79-2
Packaging: Bulk
Part Status: Obsolete
Description: DIODE GEN PURP SC79-2
Packaging: Bulk
Part Status: Obsolete
на замовлення 16350 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5106+ | 4.93 грн |
| TLE4929CXHAM18NHAMA1 |
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Виробник: Infineon Technologies
Description: SPEED & CURRENT SENSORS
Features: Programmable, Temperature Compensated
Packaging: Tape & Reel (TR)
Package / Case: 3-SSIP Module
Output Type: Open Drain
Mounting Type: Through Hole
Axis: Single
Operating Temperature: -40°C ~ 175°C (TJ)
Voltage - Supply: 4V ~ 16V
Technology: Hall Effect
Resolution: 16 b
Sensing Range: ±120mT
Current - Output (Max): 15mA
Current - Supply (Max): 13.4mA
Supplier Device Package: PG-SSO-3-53
Description: SPEED & CURRENT SENSORS
Features: Programmable, Temperature Compensated
Packaging: Tape & Reel (TR)
Package / Case: 3-SSIP Module
Output Type: Open Drain
Mounting Type: Through Hole
Axis: Single
Operating Temperature: -40°C ~ 175°C (TJ)
Voltage - Supply: 4V ~ 16V
Technology: Hall Effect
Resolution: 16 b
Sensing Range: ±120mT
Current - Output (Max): 15mA
Current - Supply (Max): 13.4mA
Supplier Device Package: PG-SSO-3-53
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| TLE4929CXHAM18NHAMA1 |
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Виробник: Infineon Technologies
Description: SPEED & CURRENT SENSORS
Features: Programmable, Temperature Compensated
Packaging: Cut Tape (CT)
Package / Case: 3-SSIP Module
Output Type: Open Drain
Mounting Type: Through Hole
Axis: Single
Operating Temperature: -40°C ~ 175°C (TJ)
Voltage - Supply: 4V ~ 16V
Technology: Hall Effect
Resolution: 16 b
Sensing Range: ±120mT
Current - Output (Max): 15mA
Current - Supply (Max): 13.4mA
Supplier Device Package: PG-SSO-3-53
Description: SPEED & CURRENT SENSORS
Features: Programmable, Temperature Compensated
Packaging: Cut Tape (CT)
Package / Case: 3-SSIP Module
Output Type: Open Drain
Mounting Type: Through Hole
Axis: Single
Operating Temperature: -40°C ~ 175°C (TJ)
Voltage - Supply: 4V ~ 16V
Technology: Hall Effect
Resolution: 16 b
Sensing Range: ±120mT
Current - Output (Max): 15mA
Current - Supply (Max): 13.4mA
Supplier Device Package: PG-SSO-3-53
на замовлення 594 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 226.92 грн |
| 5+ | 195.08 грн |
| 10+ | 186.29 грн |
| 25+ | 164.97 грн |
| 50+ | 158.24 грн |
| 100+ | 152.10 грн |
| 500+ | 137.43 грн |
| IGI60F1414A1LAUMA1 |
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Виробник: Infineon Technologies
Description: IC HALF BRIDGE DRIVER 28TIQFN
Packaging: Tape & Reel (TR)
Package / Case: 28-PowerTQFN
Mounting Type: Surface Mount
Interface: Logic, PWM
Output Configuration: Half Bridge (2)
Rds On (Typ): 140mOhm LS, 140mOhm HS
Applications: General Purpose
Supplier Device Package: PG-TIQFN-28-1
Load Type: Inductive, Resistive
Part Status: Active
Description: IC HALF BRIDGE DRIVER 28TIQFN
Packaging: Tape & Reel (TR)
Package / Case: 28-PowerTQFN
Mounting Type: Surface Mount
Interface: Logic, PWM
Output Configuration: Half Bridge (2)
Rds On (Typ): 140mOhm LS, 140mOhm HS
Applications: General Purpose
Supplier Device Package: PG-TIQFN-28-1
Load Type: Inductive, Resistive
Part Status: Active
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| IMC302AF064XUMA1 |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 64LQFP
Packaging: Cut Tape (CT)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 64-QFP (10x10)
Number of I/O: 41
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 128KB FLASH 64LQFP
Packaging: Cut Tape (CT)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 64-QFP (10x10)
Number of I/O: 41
DigiKey Programmable: Not Verified
на замовлення 235 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 504.81 грн |
| 10+ | 439.09 грн |
| 25+ | 418.63 грн |
| 100+ | 341.15 грн |
| IMC301AF064XUMA1 |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 64LQFP
Packaging: Cut Tape (CT)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 7x12b, D/A 7x1b Sigma-Delta
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, I²C, LINbus, SPI, UART/USART, USI
Peripherals: Brown-out Detect/Reset, I²S, LED, POR, PWM, WDT
Supplier Device Package: 64-QFP (10x10)
Part Status: Active
Number of I/O: 41
Description: IC MCU 32BIT 128KB FLASH 64LQFP
Packaging: Cut Tape (CT)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 7x12b, D/A 7x1b Sigma-Delta
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, I²C, LINbus, SPI, UART/USART, USI
Peripherals: Brown-out Detect/Reset, I²S, LED, POR, PWM, WDT
Supplier Device Package: 64-QFP (10x10)
Part Status: Active
Number of I/O: 41
на замовлення 1800 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 536.87 грн |
| 10+ | 466.64 грн |
| 25+ | 444.91 грн |
| 100+ | 362.54 грн |
| 250+ | 346.24 грн |
| 500+ | 315.69 грн |
| SAF-XC886CM-6FFI 5V AC |
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Виробник: Infineon Technologies
Description: IC MCU 8BIT 24KB FLASH 48TQFP
Packaging: Tape & Reel (TR)
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 24KB (24K x 8)
RAM Size: 1.75K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: XC800
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: CANbus, SSI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: PG-TQFP-48
Part Status: Obsolete
Number of I/O: 34
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 24KB FLASH 48TQFP
Packaging: Tape & Reel (TR)
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 24KB (24K x 8)
RAM Size: 1.75K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: XC800
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: CANbus, SSI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: PG-TQFP-48
Part Status: Obsolete
Number of I/O: 34
DigiKey Programmable: Not Verified
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| ISC0603NLSATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 80V 12.3A/56A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.3A (Ta), 56A (Tc)
Rds On (Max) @ Id, Vgs: 8.9mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 24µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 40 V
Description: MOSFET N-CH 80V 12.3A/56A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.3A (Ta), 56A (Tc)
Rds On (Max) @ Id, Vgs: 8.9mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 24µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 40 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5000+ | 53.68 грн |
| ISC0603NLSATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 80V 12.3A/56A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.3A (Ta), 56A (Tc)
Rds On (Max) @ Id, Vgs: 8.9mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 24µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 40 V
Description: MOSFET N-CH 80V 12.3A/56A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.3A (Ta), 56A (Tc)
Rds On (Max) @ Id, Vgs: 8.9mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 24µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 40 V
на замовлення 6987 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 133.19 грн |
| 10+ | 114.64 грн |
| 100+ | 89.38 грн |
| 500+ | 69.30 грн |
| 1000+ | 54.71 грн |
| 2000+ | 51.06 грн |
| ISC0602NLSATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 80V 14A/66A TDSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 66A (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 29µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 40 V
Description: MOSFET N-CH 80V 14A/66A TDSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 66A (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 29µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 40 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5000+ | 47.47 грн |
| ISC0602NLSATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 80V 14A/66A TDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 66A (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 29µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 40 V
Description: MOSFET N-CH 80V 14A/66A TDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 66A (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 29µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 40 V
на замовлення 10539 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 135.66 грн |
| 10+ | 88.36 грн |
| 100+ | 62.64 грн |
| 500+ | 48.03 грн |
| 1000+ | 44.52 грн |
| 2000+ | 42.90 грн |
| ISC0805NLSATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 13A/71A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 71A (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 74W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 40µA
Supplier Device Package: PG-TDSON-8-46
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 50 V
Description: MOSFET N-CH 100V 13A/71A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 71A (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 74W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 40µA
Supplier Device Package: PG-TDSON-8-46
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 50 V
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В кошику
од. на суму грн.
| ISC0805NLSATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 13A/71A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 71A (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 74W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 40µA
Supplier Device Package: PG-TDSON-8-46
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 50 V
Description: MOSFET N-CH 100V 13A/71A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 71A (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 74W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 40µA
Supplier Device Package: PG-TDSON-8-46
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 50 V
на замовлення 3394 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 111.81 грн |
| 10+ | 67.93 грн |
| 100+ | 47.06 грн |
| 500+ | 34.36 грн |
| 1000+ | 31.64 грн |
| 2000+ | 29.44 грн |
| ISC0806NLSATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 16A/97A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 97A (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 96W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 61µA
Supplier Device Package: PG-TDSON-8-7
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 50 V
Description: MOSFET N-CH 100V 16A/97A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 97A (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 96W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 61µA
Supplier Device Package: PG-TDSON-8-7
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 50 V
товару немає в наявності
В кошику
од. на суму грн.
| ISC0806NLSATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 16A/97A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 97A (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 96W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 61µA
Supplier Device Package: PG-TDSON-8-7
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 50 V
Description: MOSFET N-CH 100V 16A/97A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 97A (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 96W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 61µA
Supplier Device Package: PG-TDSON-8-7
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 50 V
на замовлення 4756 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 240.89 грн |
| 10+ | 150.90 грн |
| 100+ | 104.59 грн |
| 500+ | 79.60 грн |
| 1000+ | 73.64 грн |
| 2000+ | 69.98 грн |
| DD800S17H4_B2 |
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Виробник: Infineon Technologies
Description: DDXS17F - RECTIFIER DIODE MODULE
Description: DDXS17F - RECTIFIER DIODE MODULE
на замовлення 112 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 65878.50 грн |
| DD800S17HA_B2 |
![]() |
на замовлення 18 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 41123.08 грн |
| AUIRF7648M2TR |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 14A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric M4
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 68A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 41A, 10V
Power Dissipation (Max): 2.5W (Ta), 63W (Tc)
Vgs(th) (Max) @ Id: 4.9V @ 150µA
Supplier Device Package: DirectFET™ Isometric M4
Grade: Automotive
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2170 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 14A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric M4
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 68A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 41A, 10V
Power Dissipation (Max): 2.5W (Ta), 63W (Tc)
Vgs(th) (Max) @ Id: 4.9V @ 150µA
Supplier Device Package: DirectFET™ Isometric M4
Grade: Automotive
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2170 pF @ 25 V
Qualification: AEC-Q101
на замовлення 4800 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4800+ | 128.37 грн |
| AUIRF7648M2TR |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 14A DIRECTFET
Packaging: Cut Tape (CT)
Package / Case: DirectFET™ Isometric M4
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 68A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 41A, 10V
Power Dissipation (Max): 2.5W (Ta), 63W (Tc)
Vgs(th) (Max) @ Id: 4.9V @ 150µA
Supplier Device Package: DirectFET™ Isometric M4
Grade: Automotive
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2170 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 14A DIRECTFET
Packaging: Cut Tape (CT)
Package / Case: DirectFET™ Isometric M4
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 68A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 41A, 10V
Power Dissipation (Max): 2.5W (Ta), 63W (Tc)
Vgs(th) (Max) @ Id: 4.9V @ 150µA
Supplier Device Package: DirectFET™ Isometric M4
Grade: Automotive
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2170 pF @ 25 V
Qualification: AEC-Q101
на замовлення 9399 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 350.24 грн |
| 10+ | 223.03 грн |
| 100+ | 158.07 грн |
| 500+ | 122.35 грн |
| 1000+ | 116.01 грн |
| BAT54-04E6327 |
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Виробник: Infineon Technologies
Description: RECTIFIER DIODE, SCHOTTKY
Description: RECTIFIER DIODE, SCHOTTKY
на замовлення 45000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5602+ | 3.83 грн |
| BAT54-06E6327 |
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Виробник: Infineon Technologies
Description: RECTIFIER DIODE, SCHOTTKY
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: PG-SOT23-3-3
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Description: RECTIFIER DIODE, SCHOTTKY
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: PG-SOT23-3-3
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
на замовлення 163000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5170+ | 4.93 грн |
| BAT54-05E6327 |
![]() |
Виробник: Infineon Technologies
Description: SCHOTTKY DIODE
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: PG-SOT23-3-3
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Description: SCHOTTKY DIODE
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: PG-SOT23-3-3
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
на замовлення 41151 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5602+ | 4.11 грн |
| T3800N16TOFVTXPSA1 |
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Виробник: Infineon Technologies
Description: SCR MODULE 1.8KV 5970A TO-200AE
Packaging: Tray
Package / Case: TO-200AE
Mounting Type: Chassis Mount
Operating Temperature: 135°C (TJ)
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 63000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 3800 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Part Status: Active
Current - On State (It (RMS)) (Max): 5970 A
Voltage - Off State: 1.8 kV
Description: SCR MODULE 1.8KV 5970A TO-200AE
Packaging: Tray
Package / Case: TO-200AE
Mounting Type: Chassis Mount
Operating Temperature: 135°C (TJ)
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 63000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 3800 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Part Status: Active
Current - On State (It (RMS)) (Max): 5970 A
Voltage - Off State: 1.8 kV
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| TLE4253EXUMA2 |
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Виробник: Infineon Technologies
Description: IC REG LINEAR POS ADJ 8DSO-27
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 250mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 150 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-DSO-8-27
Voltage - Output (Min/Fixed): Tracking
Control Features: Enable
Grade: Automotive
Part Status: Active
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.6V @ 200mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 15 mA
Qualification: AEC-Q100
Description: IC REG LINEAR POS ADJ 8DSO-27
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 250mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 150 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-DSO-8-27
Voltage - Output (Min/Fixed): Tracking
Control Features: Enable
Grade: Automotive
Part Status: Active
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.6V @ 200mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 15 mA
Qualification: AEC-Q100
на замовлення 11595 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 106.88 грн |
| 10+ | 75.61 грн |
| 25+ | 68.63 грн |
| 100+ | 57.22 грн |
| 250+ | 53.79 грн |
| 500+ | 51.72 грн |
| 1000+ | 49.20 грн |
| TLE4253GSXUMA4 |
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Виробник: Infineon Technologies
Description: IC REG LINEAR POS ADJ 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 250mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 150 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-DSO-8
Voltage - Output (Min/Fixed): Tracking
Control Features: Enable
Grade: Automotive
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.6V @ 200mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 15 mA
Qualification: AEC-Q100
Description: IC REG LINEAR POS ADJ 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 250mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 150 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-DSO-8
Voltage - Output (Min/Fixed): Tracking
Control Features: Enable
Grade: Automotive
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.6V @ 200mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 15 mA
Qualification: AEC-Q100
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| TLE4253GSXUMA1 |
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Виробник: Infineon Technologies
Description: IC REG LINEAR POS ADJ 250MA DSO8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 250mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 150 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-DSO-8
Voltage - Output (Min/Fixed): Tracking
Control Features: Enable
Grade: Automotive
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.6V @ 200mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 15 mA
Qualification: AEC-Q100
Description: IC REG LINEAR POS ADJ 250MA DSO8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 250mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 150 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-DSO-8
Voltage - Output (Min/Fixed): Tracking
Control Features: Enable
Grade: Automotive
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.6V @ 200mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 15 mA
Qualification: AEC-Q100
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| TLE4253GSXUMA1 |
![]() |
Виробник: Infineon Technologies
Description: IC REG LINEAR POS ADJ 250MA DSO8
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 250mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 150 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-DSO-8
Voltage - Output (Min/Fixed): Tracking
Control Features: Enable
Grade: Automotive
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.6V @ 200mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 15 mA
Qualification: AEC-Q100
Description: IC REG LINEAR POS ADJ 250MA DSO8
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 250mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 150 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-DSO-8
Voltage - Output (Min/Fixed): Tracking
Control Features: Enable
Grade: Automotive
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.6V @ 200mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 15 mA
Qualification: AEC-Q100
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од. на суму грн.
| BCR583E6327HTSA1 |
![]() |
на замовлення 521602 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4418+ | 5.39 грн |
| IPLK80R750P7ATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET 800V TDSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
Supplier Device Package: PG-TDSON-8
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Description: MOSFET 800V TDSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
Supplier Device Package: PG-TDSON-8
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
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од. на суму грн.
| IPLK80R750P7ATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET 800V TDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
Supplier Device Package: PG-TDSON-8
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Description: MOSFET 800V TDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
Supplier Device Package: PG-TDSON-8
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
на замовлення 1596 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 163.61 грн |
| 10+ | 100.79 грн |
| 100+ | 68.23 грн |
| 500+ | 50.94 грн |
| 1000+ | 46.73 грн |
| IPLK70R750P7ATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 700V TDSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Supplier Device Package: PG-TDSON-8
Part Status: Active
Drain to Source Voltage (Vdss): 700 V
Description: MOSFET N-CH 700V TDSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Supplier Device Package: PG-TDSON-8
Part Status: Active
Drain to Source Voltage (Vdss): 700 V
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| IPLK70R750P7ATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 700V TDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Supplier Device Package: PG-TDSON-8
Part Status: Active
Drain to Source Voltage (Vdss): 700 V
Description: MOSFET N-CH 700V TDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Supplier Device Package: PG-TDSON-8
Part Status: Active
Drain to Source Voltage (Vdss): 700 V
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