Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (149687) > Сторінка 459 з 2495
| Фото | Назва | Виробник | Інформація |
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| PEB31665HV1.3 | Infineon Technologies |
Description: MUSLIC MULTICHANNEL SLIC Packaging: Bulk |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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| PEB31665HV1.2D | Infineon Technologies |
Description: MUSLIC MULTICHANNEL SLIC Packaging: Bulk |
на замовлення 169 шт: термін постачання 21-31 дні (днів) |
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BC857BE6327 | Infineon Technologies |
Description: BIPOLAR GEN PURPOSE TRANSISTOR |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| T2001N34TOFXPSA1 | Infineon Technologies |
Description: SCR MODULE 3.6KV 29900A TO-200AFPackaging: Tray Package / Case: TO-200AF Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 125°C Structure: Single Current - Hold (Ih) (Max): 350 mA Current - Gate Trigger (Igt) (Max): 350 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 44000A @ 50Hz Number of SCRs, Diodes: 1 SCR Current - On State (It (AV)) (Max): 1900 A Voltage - Gate Trigger (Vgt) (Max): 2.5 V Part Status: Obsolete Current - On State (It (RMS)) (Max): 29900 A Voltage - Off State: 3.6 kV |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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IM72D128V01XTSA1 | Infineon Technologies |
Description: MIC MEMS DIGITAL PDM NC -36DB Packaging: Tape & Reel (TR) Output Type: Digital, PDM Size / Dimension: 0.157" L x 0.118" W (4.00mm x 3.00mm) Sensitivity: -36dB ±1dB @ 94dB SPL Shape: Rectangular Type: MEMS (Silicon) S/N Ratio: 72dB Termination: Solder Pads Direction: Noise Cancelling Ratings: IP57 - Dust Protected, Waterproof Port Location: Bottom Height (Max): 0.047" (1.20mm) Part Status: Active Current - Supply: 980 µA Voltage Range: 1.62 V ~ 3.6 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IM72D128V01XTSA1 | Infineon Technologies |
Description: MIC MEMS DIGITAL PDM NC -36DB Packaging: Cut Tape (CT) Output Type: Digital, PDM Size / Dimension: 0.157" L x 0.118" W (4.00mm x 3.00mm) Sensitivity: -36dB ±1dB @ 94dB SPL Shape: Rectangular Type: MEMS (Silicon) S/N Ratio: 72dB Termination: Solder Pads Direction: Noise Cancelling Ratings: IP57 - Dust Protected, Waterproof Port Location: Bottom Height (Max): 0.047" (1.20mm) Part Status: Active Current - Supply: 980 µA Voltage Range: 1.62 V ~ 3.6 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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REFLLCBUCK4CH320WTOBO1 | Infineon Technologies |
Description: EVAL BOARD FOR ICL5102Features: Dimmable Packaging: Bulk Voltage - Output: 3V ~ 71V Voltage - Input: 90 ~ 305 VAC Contents: Board(s) Current - Output / Channel: 1.5A Utilized IC / Part: ICL5102 Supplied Contents: Board(s) Outputs and Type: 4 Non-Isolated Outputs Part Status: Active |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
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BAS70-07WH6327 | Infineon Technologies |
Description: SCHOTTKY DIODEPackaging: Bulk Package / Case: SC-82A, SOT-343 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 100 ps Technology: Schottky Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 70mA (DC) Supplier Device Package: PG-SOT343-4-1 Operating Temperature - Junction: 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 70 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA Current - Reverse Leakage @ Vr: 100 nA @ 50 V |
на замовлення 46709 шт: термін постачання 21-31 дні (днів) |
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BAS70-02W E6327 | Infineon Technologies |
Description: RECTIFIER DIODE, SCHOTTKY |
на замовлення 142031 шт: термін постачання 21-31 дні (днів) |
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BAS70-02WE6327 | Infineon Technologies |
Description: RECTIFIER DIODE, SCHOTTKY |
на замовлення 65626 шт: термін постачання 21-31 дні (днів) |
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S25FL128SDSNFI000 | Infineon Technologies |
Description: IC FLASH 128MBIT SPI/QUAD 8WSONPackaging: Tray Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 128Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 80 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (6x8) Part Status: Active Memory Interface: SPI - Quad I/O Memory Organization: 16M x 8 DigiKey Programmable: Not Verified |
на замовлення 1804 шт: термін постачання 21-31 дні (днів) |
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CYW20705B0KWFBGT | Infineon Technologies |
Description: IC RF TXRX+MCU BLE 50WFBGAPackaging: Tape & Reel (TR) Package / Case: 50-WFBGA Sensitivity: -91dBm Mounting Type: Surface Mount Frequency: 2.4GHz Type: TxRx + MCU Operating Temperature: -30°C ~ 85°C Voltage - Supply: 5.5V Power - Output: 10dBm Protocol: Bluetooth v4.1 Current - Receiving: 31mA Data Rate (Max): 3Mbps Current - Transmitting: 65mA Supplier Device Package: 50-WFBGA (4.5x4) GPIO: 8 RF Family/Standard: Bluetooth Serial Interfaces: SPI, UART, USB DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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CYW20735PKML1G | Infineon Technologies |
Description: IC RF TXRX+MCU BLUETOOTH 60VFQFNPackaging: Tray Package / Case: 60-VFQFN Exposed Pad Sensitivity: -94.5dBm Mounting Type: Surface Mount Frequency: 2.4GHz Type: TxRx + MCU Operating Temperature: -30°C ~ 85°C Voltage - Supply: 3.3V Power - Output: 10dBm Protocol: Bluetooth v4.2 Current - Receiving: 8mA Data Rate (Max): 2Mbps Current - Transmitting: 18mA Supplier Device Package: 60-QFN (7x7) GPIO: 60 Modulation: GFSK RF Family/Standard: Bluetooth Serial Interfaces: I2C, I2S, SPI, UART DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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CYW20730A1KML2GT | Infineon Technologies |
Description: IC RF TXRX+MCU BLUETOOTH 32VFQFNPackaging: Tape & Reel (TR) Package / Case: 32-VFQFN Exposed Pad Sensitivity: -88dBm Mounting Type: Surface Mount Frequency: 2.4GHz Type: TxRx + MCU Operating Temperature: 0°C ~ 70°C Voltage - Supply: 3.8V Power - Output: 4dBm Protocol: Bluetooth v3.0 Current - Receiving: 26.6mA Data Rate (Max): 1Mbps Current - Transmitting: 24mA Supplier Device Package: 32-QFN (5x5) GPIO: 14 RF Family/Standard: Bluetooth Serial Interfaces: I2C, SPI, UART Part Status: Obsolete DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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CHL8104-03CRT | Infineon Technologies |
Description: IC REG BUCK 40VQFNPackaging: Tape & Reel (TR) Package / Case: 40-VFQFN Exposed Pad Output Type: PWM Mounting Type: Surface Mount Function: Step-Down Operating Temperature: 0°C ~ 85°C Output Configuration: Positive Frequency - Switching: 200kHz ~ 1.2MHz Topology: Buck Voltage - Supply (Vcc/Vdd): 3.3V Supplier Device Package: PG-VQFN-40-903 Synchronous Rectifier: No Control Features: Enable, Power Good Serial Interfaces: I²C Output Phases: 4 Clock Sync: No Part Status: Obsolete Number of Outputs: 5 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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TC277T64F200SDCKXUMA2 | Infineon Technologies |
Description: IC MCU 32BIT 4MB FLASH 292LFBGAPackaging: Tape & Reel (TR) Package / Case: 292-LFBGA Mounting Type: Surface Mount Speed: 200MHz Program Memory Size: 4MB (4M x 8) RAM Size: 472K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: External Program Memory Type: FLASH EEPROM Size: 64K x 8 Core Processor: TriCore™ Data Converters: A/D 60x12b SAR, Sigma-Delta Core Size: 32-Bit Tri-Core Voltage - Supply (Vcc/Vdd): 1.17V ~ 5.5V Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT Peripherals: DMA, POR, WDT Supplier Device Package: PG-LFBGA-292-6 Part Status: Active Number of I/O: 169 DigiKey Programmable: Not Verified |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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MR16 7W BOARD | Infineon Technologies |
Description: EVAL BOARD MR16 7W ILD4001Packaging: Box Voltage - Output: 6.5V Voltage - Input: 12VAC Current - Output / Channel: 770mA Utilized IC / Part: ILD4001 Supplied Contents: Board(s) Outputs and Type: 1, Non-Isolated Part Status: Discontinued at Digi-Key |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
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MR16 10W BOARD | Infineon Technologies |
Description: EVAL BOARD MR16 10W ILD4001Packaging: Box Voltage - Output: 6.6V Voltage - Input: 12VAC Current - Output / Channel: 1.02A Utilized IC / Part: ILD4001 Supplied Contents: Board(s) Outputs and Type: 1, Non-Isolated Part Status: Discontinued at Digi-Key |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
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CY14B108L-ZS45XI | Infineon Technologies |
Description: IC NVSRAM 8MBIT PAR 44TSOP IIPackaging: Tray Package / Case: 44-TSOP (0.400", 10.16mm Width) Mounting Type: Surface Mount Memory Size: 8Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: NVSRAM (Non-Volatile SRAM) Memory Format: NVSRAM Supplier Device Package: 44-TSOP II Write Cycle Time - Word, Page: 45ns Memory Interface: Parallel Access Time: 45 ns Memory Organization: 1M x 8 DigiKey Programmable: Not Verified |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
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IPC70N04S5L4R2ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 40V 70A 8TDSON-34Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 4.2mOhm @ 35A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 2V @ 17µA Supplier Device Package: PG-TDSON-8-34 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 14260 шт: термін постачання 21-31 дні (днів) |
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BGA622E6327 | Infineon Technologies |
Description: IC AMP CELL 0HZ-2.4GHZ SOT343-4Packaging: Bulk Package / Case: SC-82A, SOT-343 Mounting Type: Surface Mount Frequency: 0Hz ~ 2.4GHz RF Type: Cellular, GSM, PCS, CDMA, UMTS Voltage - Supply: 3V Gain: 17.5dB Current - Supply: 80mA Noise Figure: 2.1dB P1dB: 12dBm Test Frequency: 2GHz Supplier Device Package: PG-SOT343-4 Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IPBE65R190CFD7AATMA1 | Infineon Technologies |
Description: MOSFET N-CH 650V 14A TO263-7Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 6.4A, 10V Power Dissipation (Max): 77W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 320µA Supplier Device Package: PG-TO263-7-11 Grade: Automotive Part Status: Active Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1291 pF @ 400 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IPBE65R190CFD7AATMA1 | Infineon Technologies |
Description: MOSFET N-CH 650V 14A TO263-7Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 6.4A, 10V Power Dissipation (Max): 77W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 320µA Supplier Device Package: PG-TO263-7-11 Grade: Automotive Part Status: Active Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1291 pF @ 400 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IPW65R190CFD7AXKSA1 | Infineon Technologies |
Description: MOSFET N-CH 650V 14A TO247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 6.4A, 10V Power Dissipation (Max): 77W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 320µA Supplier Device Package: PG-TO247-3 Grade: Automotive Part Status: Active Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1291 pF @ 400 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IPW65R145CFD7AXKSA1 | Infineon Technologies |
Description: MOSFET N-CH 650V 17A TO247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 145mOhm @ 8.5A, 10V Power Dissipation (Max): 98W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 420µA Supplier Device Package: PG-TO247-3 Grade: Automotive Part Status: Active Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1694 pF @ 400 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| IPBE65R145CFD7AATMA1 | Infineon Technologies |
Description: AUTOMOTIVE PG-TO263-7 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| IPN10ELSXUMA1 | Infineon Technologies |
Description: IC GATE DRVR HALF-BRIDGE SSOP-14 |
на замовлення 237500 шт: термін постачання 21-31 дні (днів) |
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EVAL1ED020I12F2DBTOBO1 | Infineon Technologies |
Description: EVAL BOARD FOR 1ED020I12F2Packaging: Bulk Function: Gate Driver Type: Power Management Contents: Board(s) Utilized IC / Part: 1ED020I12F2 Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IR3567AMGB02TRP | Infineon Technologies |
Description: IC REG BUCK 56VQFNPackaging: Tape & Reel (TR) Package / Case: 56-VFQFN Exposed Pad Output Type: PWM Mounting Type: Surface Mount Function: Step-Down Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Positive Frequency - Switching: 200kHz ~ 2MHz Topology: Buck Voltage - Supply (Vcc/Vdd): 3.3V Supplier Device Package: PG-VQFN-56-900 Synchronous Rectifier: No Control Features: Enable, Power Good Serial Interfaces: I²C, PMBus, SMBus Output Phases: 6 Clock Sync: No Part Status: Obsolete Number of Outputs: 8 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FS225R17OE4BOSA1 | Infineon Technologies |
Description: IGBT MOD 1700V 350A 1450WPackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 150°C Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 225A NTC Thermistor: Yes Supplier Device Package: Module IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 350 A Voltage - Collector Emitter Breakdown (Max): 1700 V Power - Max: 1450 W Current - Collector Cutoff (Max): 3 mA Input Capacitance (Cies) @ Vce: 600 pF @ 25 V |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
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IGT60R190D1ATMA1 | Infineon Technologies |
Description: GAN HV Packaging: Tape & Reel (TR) Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SAK-TC265DE-40F200N BC | Infineon Technologies |
Description: IC MCU 32BIT 2.5MB FLASH 176LQFPPackaging: Tape & Reel (TR) Package / Case: 176-LQFP Exposed Pad Mounting Type: Surface Mount Speed: 200MHz Program Memory Size: 2.5MB (2.5M x 8) RAM Size: 240K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: External Program Memory Type: FLASH EEPROM Size: 16K x 8 Core Processor: TriCore™ Data Converters: A/D 53x12b SAR, Sigma-Delta Core Size: 32-Bit Dual-Core Voltage - Supply (Vcc/Vdd): 1.17V ~ 5.5V Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I²C, LINbus, MSC, PSI5, QSPI, SENT Peripherals: DMA, POR, WDT Supplier Device Package: PG-LQFP-176-22 Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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F4200R17N3E4B58BPSA1 | Infineon Technologies |
Description: LOW POWER ECONO AG-ECONO3B-411Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Three Phase Bridge Rectifier Configuration: Full Bridge Inverter Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 200A NTC Thermistor: Yes Supplier Device Package: AG-ECONO3B IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 200 A Voltage - Collector Emitter Breakdown (Max): 1700 V Power - Max: 20 mW Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 16 nF @ 25 V |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
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CY7C168A-20PXC | Infineon Technologies |
Description: IC SRAM 16KBIT PARALLEL 20DIPPackaging: Tube Package / Case: 20-DIP (0.300", 7.62mm) Mounting Type: Through Hole Memory Size: 16Kbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 4.5V ~ 5.5V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 20-DIP Write Cycle Time - Word, Page: 20ns Memory Interface: Parallel Access Time: 20 ns Memory Organization: 4K x 4 DigiKey Programmable: Not Verified |
на замовлення 1255 шт: термін постачання 21-31 дні (днів) |
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DCSHIELDBTN7030TOBO1 | Infineon Technologies |
Description: DC-SHIELD_BTN7030Packaging: Bulk Function: Motor Controller/Driver Type: Power Management Contents: Board(s) Utilized IC / Part: BTN7030-1EPA Platform: Arduino Part Status: Active |
на замовлення 6 шт: термін постачання 21-31 дні (днів) |
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DCSHIELDBTN9970LVTOBO1 | Infineon Technologies |
Description: DC SHIELD EVAL BOARDPackaging: Bulk Function: Motor Controller/Driver Type: Power Management Contents: Board(s) Utilized IC / Part: BTN9970, BTN9990 Platform: Arduino Part Status: Active |
на замовлення 33 шт: термін постачання 21-31 дні (днів) |
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2EDN7524RXTMA1 | Infineon Technologies |
Description: IC GATE DRVR LOW-SIDE 8TSSOPPackaging: Cut Tape (CT) Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 4.5V ~ 20V Input Type: Non-Inverting Supplier Device Package: PG-TSSOP-8 Rise / Fall Time (Typ): 5.3ns, 4.5ns Channel Type: Independent Driven Configuration: Low-Side Number of Drivers: 2 Gate Type: MOSFET (N-Channel) Logic Voltage - VIL, VIH: 1.1V, 1.98V Current - Peak Output (Source, Sink): 5A, 5A Part Status: Active DigiKey Programmable: Not Verified |
на замовлення 14110 шт: термін постачання 21-31 дні (днів) |
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2EDN8524RXTMA1 | Infineon Technologies |
Description: IC GATE DRVR LOW-SIDE 8TSSOPPackaging: Cut Tape (CT) Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 4.5V ~ 20V Input Type: Non-Inverting Supplier Device Package: PG-TSSOP-8 Rise / Fall Time (Typ): 5.3ns, 4.5ns Channel Type: Independent Driven Configuration: Low-Side Number of Drivers: 2 Gate Type: MOSFET (N-Channel) Logic Voltage - VIL, VIH: 1.1V, 1.98V Current - Peak Output (Source, Sink): 5A, 5A Part Status: Active DigiKey Programmable: Not Verified |
на замовлення 3566 шт: термін постачання 21-31 дні (днів) |
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2EDN7523RXTMA1 | Infineon Technologies |
Description: IC GATE DRVR LOW-SIDE 8TSSOPPackaging: Cut Tape (CT) Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 4.5V ~ 20V Input Type: Non-Inverting Supplier Device Package: PG-TSSOP-8 Rise / Fall Time (Typ): 5.3ns, 4.5ns Channel Type: Independent Driven Configuration: Low-Side Number of Drivers: 2 Gate Type: MOSFET (N-Channel) Logic Voltage - VIL, VIH: 1.1V, 1.98V Current - Peak Output (Source, Sink): 5A, 5A Part Status: Active DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IPL65R230C7AUMA1 | Infineon Technologies |
Description: MOSFET N-CH 650V 10A 4VSONPackaging: Cut Tape (CT) Package / Case: 4-PowerTSFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 230mOhm @ 2.4A, 10V Power Dissipation (Max): 67W (Tc) Vgs(th) (Max) @ Id: 4V @ 240µA Supplier Device Package: PG-VSON-4 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 996 pF @ 400 V |
на замовлення 11039 шт: термін постачання 21-31 дні (днів) |
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EVALIM67D120FLEXKITTOBO1 | Infineon Technologies |
Description: EVAL BOARD FOR IM67D120Packaging: Bulk Function: MEMS Omnidirectional Microphones Type: Audio Contents: Board(s) Utilized IC / Part: IM67D120 Supplied Contents: Board(s) Embedded: No Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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AN985B-BG-T-V1 | Infineon Technologies |
Description: CARDBUS-TO ETHERNET LAN CONTROLL Packaging: Bulk DigiKey Programmable: Not Verified |
на замовлення 1440 шт: термін постачання 21-31 дні (днів) |
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SAK-TC265DC-40F200W BC | Infineon Technologies |
Description: IC MCU 32BIT |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SAK-TC265DC-40F200W BB | Infineon Technologies |
Description: IC MCU 32BIT 2.5MB FLASH 176LQFP Packaging: Tape & Reel (TR) Package / Case: 176-LQFP Exposed Pad Mounting Type: Surface Mount Speed: 200MHz Program Memory Size: 2.5MB (2.5M x 8) RAM Size: 240K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: External Program Memory Type: FLASH EEPROM Size: 96K x 8 Core Processor: TriCore™ Data Converters: A/D 50x12b SAR, Sigma-Delta Core Size: 32-Bit Dual-Core Voltage - Supply (Vcc/Vdd): 1.17V ~ 5.5V Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I²C, LINbus, MSC, PSI5, QSPI, SENT Peripherals: DMA, WDT Supplier Device Package: PG-LQFP-176-22 Number of I/O: 112 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| SAK-TC265DE-40F200W BB | Infineon Technologies | Description: IC MICROCONTROLLER |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| SAK-TC265DE-40F200Q BB | Infineon Technologies | Description: IC MICROCONTROLLER |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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S25FL116K0XBHI030 | Infineon Technologies |
Description: IC FLASH 16MBIT SPI/QUAD 24BGAPackaging: Tray Package / Case: 24-TBGA Mounting Type: Surface Mount Memory Size: 16Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 108 MHz Memory Format: FLASH Supplier Device Package: 24-BGA (6x8) Write Cycle Time - Word, Page: 3ms Memory Interface: SPI - Quad I/O Memory Organization: 2M x 8 DigiKey Programmable: Not Verified |
на замовлення 10 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
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S25FL116K0XMFN041 | Infineon Technologies |
Description: IC FLASH 16MBIT SPI/QUAD 8SOICPackaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 16Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 108 MHz Memory Format: FLASH Supplier Device Package: 8-SOIC Write Cycle Time - Word, Page: 3ms Memory Interface: SPI - Quad I/O Memory Organization: 2M x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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S25FL116K0XNFB013 | Infineon Technologies |
Description: IC FLASH 16MBIT SPI/QUAD 8SOICPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 16Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 108 MHz Memory Format: FLASH Supplier Device Package: 8-SOIC Write Cycle Time - Word, Page: 3ms Memory Interface: SPI - Quad I/O Memory Organization: 2M x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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S25FL116K0XBHB030 | Infineon Technologies |
Description: IC FLASH 16MBIT SPI/QUAD 24BGA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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S25FL116K0XMFB041 | Infineon Technologies |
Description: IC FLASH 16MBIT SPI/QUAD 8SOICPackaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 16Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 108 MHz Memory Format: FLASH Supplier Device Package: 8-SOIC Write Cycle Time - Word, Page: 3ms Memory Interface: SPI - Quad I/O Memory Organization: 2M x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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S25FL116K0XNFB010 | Infineon Technologies |
Description: IC FLASH 16MBIT SPI/QUAD 8SOICPackaging: Tray Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 16Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 108 MHz Memory Format: FLASH Supplier Device Package: 8-SOIC Write Cycle Time - Word, Page: 3ms Memory Interface: SPI - Quad I/O Memory Organization: 2M x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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S25FL116K0XMFB043 | Infineon Technologies |
Description: IC FLASH 16MBIT SPI/QUAD 8SOICPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 16Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 108 MHz Memory Format: FLASH Supplier Device Package: 8-SOIC Write Cycle Time - Word, Page: 3ms Memory Interface: SPI - Quad I/O Memory Organization: 2M x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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ISC036N04NM5ATMA1 | Infineon Technologies |
Description: 40V 3.6M OPTIMOS MOSFET SUPERSO8Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 98A (Tc) Rds On (Max) @ Id, Vgs: 3.6mOhm @ 49A, 10V Power Dissipation (Max): 3W (Ta), 63W (Tc) Vgs(th) (Max) @ Id: 3.4V @ 23µA Supplier Device Package: PG-TDSON-8 FL Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 20 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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ISC036N04NM5ATMA1 | Infineon Technologies |
Description: 40V 3.6M OPTIMOS MOSFET SUPERSO8Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 98A (Tc) Rds On (Max) @ Id, Vgs: 3.6mOhm @ 49A, 10V Power Dissipation (Max): 3W (Ta), 63W (Tc) Vgs(th) (Max) @ Id: 3.4V @ 23µA Supplier Device Package: PG-TDSON-8 FL Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 20 V |
на замовлення 3238 шт: термін постачання 21-31 дні (днів) |
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TDA21590AUMA1 | Infineon Technologies |
Description: IC REG BUCK 39QFNPackaging: Cut Tape (CT) Package / Case: 39-PowerVFQFN Mounting Type: Surface Mount Number of Outputs: 1 Function: Step-Down Output Configuration: Positive Topology: Buck Supplier Device Package: PG-IQFN-39 Synchronous Rectifier: No Part Status: Active |
на замовлення 39903 шт: термін постачання 21-31 дні (днів) |
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BB 689 E7903 | Infineon Technologies |
Description: DIODE TUNING 30V 20MA SCD-80Packaging: Tape & Reel (TR) Package / Case: SC-80 Mounting Type: Surface Mount Diode Type: Single Operating Temperature: -55°C ~ 150°C (TJ) Capacitance @ Vr, F: 2.9pF @ 28V, 1MHz Capacitance Ratio Condition: C1/C28 Supplier Device Package: SCD-80 Voltage - Peak Reverse (Max): 30 V Capacitance Ratio: 23.2 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IDD05SG60C | Infineon Technologies |
Description: DIODE SIL CARB 600V 5A TO252-3Packaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 110pF @ 1V, 1MHz Current - Average Rectified (Io): 5A Supplier Device Package: PG-TO252-3 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 5 A Current - Reverse Leakage @ Vr: 30 µA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
IDH03SG60C | Infineon Technologies |
Description: DIODE SIL CARB 600V 3A TO220-2-2Packaging: Bulk Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 60pF @ 1V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: PG-TO220-2-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 3 A Current - Reverse Leakage @ Vr: 15 µA @ 600 V |
на замовлення 68889 шт: термін постачання 21-31 дні (днів) |
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IMZA65R083M1HXKSA1 | Infineon Technologies |
Description: SILICON CARBIDE MOSFET, PG-TO247Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Rds On (Max) @ Id, Vgs: 111mOhm @ 11.2A, 18V Power Dissipation (Max): 104W (Tc) Vgs(th) (Max) @ Id: 5.7V @ 3.3mA Supplier Device Package: PG-TO247-4-3 Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +20V, -2V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 624 pF @ 400 V |
на замовлення 44 шт: термін постачання 21-31 дні (днів) |
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| PEB31665HV1.3 |
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 2001.49 грн |
| PEB31665HV1.2D |
на замовлення 169 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 2001.49 грн |
| BC857BE6327 |
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Виробник: Infineon Technologies
Description: BIPOLAR GEN PURPOSE TRANSISTOR
Description: BIPOLAR GEN PURPOSE TRANSISTOR
товару немає в наявності
В кошику
од. на суму грн.
| T2001N34TOFXPSA1 |
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Виробник: Infineon Technologies
Description: SCR MODULE 3.6KV 29900A TO-200AF
Packaging: Tray
Package / Case: TO-200AF
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 350 mA
Current - Gate Trigger (Igt) (Max): 350 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 44000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 1900 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 29900 A
Voltage - Off State: 3.6 kV
Description: SCR MODULE 3.6KV 29900A TO-200AF
Packaging: Tray
Package / Case: TO-200AF
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 350 mA
Current - Gate Trigger (Igt) (Max): 350 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 44000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 1900 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 29900 A
Voltage - Off State: 3.6 kV
товару немає в наявності
В кошику
од. на суму грн.
| IM72D128V01XTSA1 |
Виробник: Infineon Technologies
Description: MIC MEMS DIGITAL PDM NC -36DB
Packaging: Tape & Reel (TR)
Output Type: Digital, PDM
Size / Dimension: 0.157" L x 0.118" W (4.00mm x 3.00mm)
Sensitivity: -36dB ±1dB @ 94dB SPL
Shape: Rectangular
Type: MEMS (Silicon)
S/N Ratio: 72dB
Termination: Solder Pads
Direction: Noise Cancelling
Ratings: IP57 - Dust Protected, Waterproof
Port Location: Bottom
Height (Max): 0.047" (1.20mm)
Part Status: Active
Current - Supply: 980 µA
Voltage Range: 1.62 V ~ 3.6 V
Description: MIC MEMS DIGITAL PDM NC -36DB
Packaging: Tape & Reel (TR)
Output Type: Digital, PDM
Size / Dimension: 0.157" L x 0.118" W (4.00mm x 3.00mm)
Sensitivity: -36dB ±1dB @ 94dB SPL
Shape: Rectangular
Type: MEMS (Silicon)
S/N Ratio: 72dB
Termination: Solder Pads
Direction: Noise Cancelling
Ratings: IP57 - Dust Protected, Waterproof
Port Location: Bottom
Height (Max): 0.047" (1.20mm)
Part Status: Active
Current - Supply: 980 µA
Voltage Range: 1.62 V ~ 3.6 V
товару немає в наявності
В кошику
од. на суму грн.
| IM72D128V01XTSA1 |
Виробник: Infineon Technologies
Description: MIC MEMS DIGITAL PDM NC -36DB
Packaging: Cut Tape (CT)
Output Type: Digital, PDM
Size / Dimension: 0.157" L x 0.118" W (4.00mm x 3.00mm)
Sensitivity: -36dB ±1dB @ 94dB SPL
Shape: Rectangular
Type: MEMS (Silicon)
S/N Ratio: 72dB
Termination: Solder Pads
Direction: Noise Cancelling
Ratings: IP57 - Dust Protected, Waterproof
Port Location: Bottom
Height (Max): 0.047" (1.20mm)
Part Status: Active
Current - Supply: 980 µA
Voltage Range: 1.62 V ~ 3.6 V
Description: MIC MEMS DIGITAL PDM NC -36DB
Packaging: Cut Tape (CT)
Output Type: Digital, PDM
Size / Dimension: 0.157" L x 0.118" W (4.00mm x 3.00mm)
Sensitivity: -36dB ±1dB @ 94dB SPL
Shape: Rectangular
Type: MEMS (Silicon)
S/N Ratio: 72dB
Termination: Solder Pads
Direction: Noise Cancelling
Ratings: IP57 - Dust Protected, Waterproof
Port Location: Bottom
Height (Max): 0.047" (1.20mm)
Part Status: Active
Current - Supply: 980 µA
Voltage Range: 1.62 V ~ 3.6 V
товару немає в наявності
В кошику
од. на суму грн.
| REFLLCBUCK4CH320WTOBO1 |
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Виробник: Infineon Technologies
Description: EVAL BOARD FOR ICL5102
Features: Dimmable
Packaging: Bulk
Voltage - Output: 3V ~ 71V
Voltage - Input: 90 ~ 305 VAC
Contents: Board(s)
Current - Output / Channel: 1.5A
Utilized IC / Part: ICL5102
Supplied Contents: Board(s)
Outputs and Type: 4 Non-Isolated Outputs
Part Status: Active
Description: EVAL BOARD FOR ICL5102
Features: Dimmable
Packaging: Bulk
Voltage - Output: 3V ~ 71V
Voltage - Input: 90 ~ 305 VAC
Contents: Board(s)
Current - Output / Channel: 1.5A
Utilized IC / Part: ICL5102
Supplied Contents: Board(s)
Outputs and Type: 4 Non-Isolated Outputs
Part Status: Active
на замовлення 1 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 17194.77 грн |
| BAS70-07WH6327 |
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Виробник: Infineon Technologies
Description: SCHOTTKY DIODE
Packaging: Bulk
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 100 ps
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 70mA (DC)
Supplier Device Package: PG-SOT343-4-1
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Description: SCHOTTKY DIODE
Packaging: Bulk
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 100 ps
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 70mA (DC)
Supplier Device Package: PG-SOT343-4-1
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
на замовлення 46709 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2777+ | 9.04 грн |
| BAS70-02W E6327 |
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Виробник: Infineon Technologies
Description: RECTIFIER DIODE, SCHOTTKY
Description: RECTIFIER DIODE, SCHOTTKY
на замовлення 142031 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 15000+ | 1.67 грн |
| BAS70-02WE6327 |
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Виробник: Infineon Technologies
Description: RECTIFIER DIODE, SCHOTTKY
Description: RECTIFIER DIODE, SCHOTTKY
на замовлення 65626 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 11269+ | 2.50 грн |
| S25FL128SDSNFI000 |
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Виробник: Infineon Technologies
Description: IC FLASH 128MBIT SPI/QUAD 8WSON
Packaging: Tray
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 80 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Part Status: Active
Memory Interface: SPI - Quad I/O
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 128MBIT SPI/QUAD 8WSON
Packaging: Tray
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 80 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Part Status: Active
Memory Interface: SPI - Quad I/O
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
на замовлення 1804 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 245.83 грн |
| 10+ | 220.65 грн |
| 25+ | 214.05 грн |
| 50+ | 196.22 грн |
| 100+ | 191.57 грн |
| 338+ | 183.44 грн |
| 676+ | 179.82 грн |
| CYW20705B0KWFBGT |
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Виробник: Infineon Technologies
Description: IC RF TXRX+MCU BLE 50WFBGA
Packaging: Tape & Reel (TR)
Package / Case: 50-WFBGA
Sensitivity: -91dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 5.5V
Power - Output: 10dBm
Protocol: Bluetooth v4.1
Current - Receiving: 31mA
Data Rate (Max): 3Mbps
Current - Transmitting: 65mA
Supplier Device Package: 50-WFBGA (4.5x4)
GPIO: 8
RF Family/Standard: Bluetooth
Serial Interfaces: SPI, UART, USB
DigiKey Programmable: Not Verified
Description: IC RF TXRX+MCU BLE 50WFBGA
Packaging: Tape & Reel (TR)
Package / Case: 50-WFBGA
Sensitivity: -91dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 5.5V
Power - Output: 10dBm
Protocol: Bluetooth v4.1
Current - Receiving: 31mA
Data Rate (Max): 3Mbps
Current - Transmitting: 65mA
Supplier Device Package: 50-WFBGA (4.5x4)
GPIO: 8
RF Family/Standard: Bluetooth
Serial Interfaces: SPI, UART, USB
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
| CYW20735PKML1G |
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Виробник: Infineon Technologies
Description: IC RF TXRX+MCU BLUETOOTH 60VFQFN
Packaging: Tray
Package / Case: 60-VFQFN Exposed Pad
Sensitivity: -94.5dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 3.3V
Power - Output: 10dBm
Protocol: Bluetooth v4.2
Current - Receiving: 8mA
Data Rate (Max): 2Mbps
Current - Transmitting: 18mA
Supplier Device Package: 60-QFN (7x7)
GPIO: 60
Modulation: GFSK
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, I2S, SPI, UART
DigiKey Programmable: Not Verified
Description: IC RF TXRX+MCU BLUETOOTH 60VFQFN
Packaging: Tray
Package / Case: 60-VFQFN Exposed Pad
Sensitivity: -94.5dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 3.3V
Power - Output: 10dBm
Protocol: Bluetooth v4.2
Current - Receiving: 8mA
Data Rate (Max): 2Mbps
Current - Transmitting: 18mA
Supplier Device Package: 60-QFN (7x7)
GPIO: 60
Modulation: GFSK
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, I2S, SPI, UART
DigiKey Programmable: Not Verified
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| CYW20730A1KML2GT |
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Виробник: Infineon Technologies
Description: IC RF TXRX+MCU BLUETOOTH 32VFQFN
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Sensitivity: -88dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Type: TxRx + MCU
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.8V
Power - Output: 4dBm
Protocol: Bluetooth v3.0
Current - Receiving: 26.6mA
Data Rate (Max): 1Mbps
Current - Transmitting: 24mA
Supplier Device Package: 32-QFN (5x5)
GPIO: 14
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, SPI, UART
Part Status: Obsolete
DigiKey Programmable: Not Verified
Description: IC RF TXRX+MCU BLUETOOTH 32VFQFN
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Sensitivity: -88dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Type: TxRx + MCU
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.8V
Power - Output: 4dBm
Protocol: Bluetooth v3.0
Current - Receiving: 26.6mA
Data Rate (Max): 1Mbps
Current - Transmitting: 24mA
Supplier Device Package: 32-QFN (5x5)
GPIO: 14
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, SPI, UART
Part Status: Obsolete
DigiKey Programmable: Not Verified
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| CHL8104-03CRT |
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Виробник: Infineon Technologies
Description: IC REG BUCK 40VQFN
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Output Type: PWM
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: 0°C ~ 85°C
Output Configuration: Positive
Frequency - Switching: 200kHz ~ 1.2MHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 3.3V
Supplier Device Package: PG-VQFN-40-903
Synchronous Rectifier: No
Control Features: Enable, Power Good
Serial Interfaces: I²C
Output Phases: 4
Clock Sync: No
Part Status: Obsolete
Number of Outputs: 5
Description: IC REG BUCK 40VQFN
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Output Type: PWM
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: 0°C ~ 85°C
Output Configuration: Positive
Frequency - Switching: 200kHz ~ 1.2MHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 3.3V
Supplier Device Package: PG-VQFN-40-903
Synchronous Rectifier: No
Control Features: Enable, Power Good
Serial Interfaces: I²C
Output Phases: 4
Clock Sync: No
Part Status: Obsolete
Number of Outputs: 5
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| TC277T64F200SDCKXUMA2 |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 4MB FLASH 292LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 472K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: TriCore™
Data Converters: A/D 60x12b SAR, Sigma-Delta
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 1.17V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, POR, WDT
Supplier Device Package: PG-LFBGA-292-6
Part Status: Active
Number of I/O: 169
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 4MB FLASH 292LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 472K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: TriCore™
Data Converters: A/D 60x12b SAR, Sigma-Delta
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 1.17V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, POR, WDT
Supplier Device Package: PG-LFBGA-292-6
Part Status: Active
Number of I/O: 169
DigiKey Programmable: Not Verified
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1000+ | 1579.91 грн |
| MR16 7W BOARD |
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Виробник: Infineon Technologies
Description: EVAL BOARD MR16 7W ILD4001
Packaging: Box
Voltage - Output: 6.5V
Voltage - Input: 12VAC
Current - Output / Channel: 770mA
Utilized IC / Part: ILD4001
Supplied Contents: Board(s)
Outputs and Type: 1, Non-Isolated
Part Status: Discontinued at Digi-Key
Description: EVAL BOARD MR16 7W ILD4001
Packaging: Box
Voltage - Output: 6.5V
Voltage - Input: 12VAC
Current - Output / Channel: 770mA
Utilized IC / Part: ILD4001
Supplied Contents: Board(s)
Outputs and Type: 1, Non-Isolated
Part Status: Discontinued at Digi-Key
на замовлення 1 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1406.73 грн |
| MR16 10W BOARD |
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Виробник: Infineon Technologies
Description: EVAL BOARD MR16 10W ILD4001
Packaging: Box
Voltage - Output: 6.6V
Voltage - Input: 12VAC
Current - Output / Channel: 1.02A
Utilized IC / Part: ILD4001
Supplied Contents: Board(s)
Outputs and Type: 1, Non-Isolated
Part Status: Discontinued at Digi-Key
Description: EVAL BOARD MR16 10W ILD4001
Packaging: Box
Voltage - Output: 6.6V
Voltage - Input: 12VAC
Current - Output / Channel: 1.02A
Utilized IC / Part: ILD4001
Supplied Contents: Board(s)
Outputs and Type: 1, Non-Isolated
Part Status: Discontinued at Digi-Key
на замовлення 1 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1652.55 грн |
| CY14B108L-ZS45XI |
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Виробник: Infineon Technologies
Description: IC NVSRAM 8MBIT PAR 44TSOP II
Packaging: Tray
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 1M x 8
DigiKey Programmable: Not Verified
Description: IC NVSRAM 8MBIT PAR 44TSOP II
Packaging: Tray
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 1M x 8
DigiKey Programmable: Not Verified
на замовлення 1 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1108.28 грн |
| IPC70N04S5L4R2ATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 70A 8TDSON-34
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 35A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 2V @ 17µA
Supplier Device Package: PG-TDSON-8-34
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 70A 8TDSON-34
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 35A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 2V @ 17µA
Supplier Device Package: PG-TDSON-8-34
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Qualification: AEC-Q101
на замовлення 14260 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 74.82 грн |
| 10+ | 54.07 грн |
| 100+ | 38.11 грн |
| 500+ | 29.50 грн |
| 1000+ | 27.01 грн |
| 2000+ | 25.50 грн |
| BGA622E6327 |
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Виробник: Infineon Technologies
Description: IC AMP CELL 0HZ-2.4GHZ SOT343-4
Packaging: Bulk
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Frequency: 0Hz ~ 2.4GHz
RF Type: Cellular, GSM, PCS, CDMA, UMTS
Voltage - Supply: 3V
Gain: 17.5dB
Current - Supply: 80mA
Noise Figure: 2.1dB
P1dB: 12dBm
Test Frequency: 2GHz
Supplier Device Package: PG-SOT343-4
Part Status: Active
Description: IC AMP CELL 0HZ-2.4GHZ SOT343-4
Packaging: Bulk
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Frequency: 0Hz ~ 2.4GHz
RF Type: Cellular, GSM, PCS, CDMA, UMTS
Voltage - Supply: 3V
Gain: 17.5dB
Current - Supply: 80mA
Noise Figure: 2.1dB
P1dB: 12dBm
Test Frequency: 2GHz
Supplier Device Package: PG-SOT343-4
Part Status: Active
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| IPBE65R190CFD7AATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 14A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 6.4A, 10V
Power Dissipation (Max): 77W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 320µA
Supplier Device Package: PG-TO263-7-11
Grade: Automotive
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1291 pF @ 400 V
Qualification: AEC-Q101
Description: MOSFET N-CH 650V 14A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 6.4A, 10V
Power Dissipation (Max): 77W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 320µA
Supplier Device Package: PG-TO263-7-11
Grade: Automotive
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1291 pF @ 400 V
Qualification: AEC-Q101
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| IPBE65R190CFD7AATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 14A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 6.4A, 10V
Power Dissipation (Max): 77W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 320µA
Supplier Device Package: PG-TO263-7-11
Grade: Automotive
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1291 pF @ 400 V
Qualification: AEC-Q101
Description: MOSFET N-CH 650V 14A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 6.4A, 10V
Power Dissipation (Max): 77W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 320µA
Supplier Device Package: PG-TO263-7-11
Grade: Automotive
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1291 pF @ 400 V
Qualification: AEC-Q101
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| IPW65R190CFD7AXKSA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 14A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 6.4A, 10V
Power Dissipation (Max): 77W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 320µA
Supplier Device Package: PG-TO247-3
Grade: Automotive
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1291 pF @ 400 V
Qualification: AEC-Q101
Description: MOSFET N-CH 650V 14A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 6.4A, 10V
Power Dissipation (Max): 77W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 320µA
Supplier Device Package: PG-TO247-3
Grade: Automotive
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1291 pF @ 400 V
Qualification: AEC-Q101
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| IPW65R145CFD7AXKSA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 17A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 8.5A, 10V
Power Dissipation (Max): 98W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 420µA
Supplier Device Package: PG-TO247-3
Grade: Automotive
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1694 pF @ 400 V
Qualification: AEC-Q101
Description: MOSFET N-CH 650V 17A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 8.5A, 10V
Power Dissipation (Max): 98W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 420µA
Supplier Device Package: PG-TO247-3
Grade: Automotive
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1694 pF @ 400 V
Qualification: AEC-Q101
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| IPBE65R145CFD7AATMA1 |
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Виробник: Infineon Technologies
Description: AUTOMOTIVE PG-TO263-7
Description: AUTOMOTIVE PG-TO263-7
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| IPN10ELSXUMA1 |
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Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE SSOP-14
Description: IC GATE DRVR HALF-BRIDGE SSOP-14
на замовлення 237500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 473+ | 52.54 грн |
| EVAL1ED020I12F2DBTOBO1 |
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Виробник: Infineon Technologies
Description: EVAL BOARD FOR 1ED020I12F2
Packaging: Bulk
Function: Gate Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: 1ED020I12F2
Part Status: Active
Description: EVAL BOARD FOR 1ED020I12F2
Packaging: Bulk
Function: Gate Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: 1ED020I12F2
Part Status: Active
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| IR3567AMGB02TRP |
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Виробник: Infineon Technologies
Description: IC REG BUCK 56VQFN
Packaging: Tape & Reel (TR)
Package / Case: 56-VFQFN Exposed Pad
Output Type: PWM
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 200kHz ~ 2MHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 3.3V
Supplier Device Package: PG-VQFN-56-900
Synchronous Rectifier: No
Control Features: Enable, Power Good
Serial Interfaces: I²C, PMBus, SMBus
Output Phases: 6
Clock Sync: No
Part Status: Obsolete
Number of Outputs: 8
Description: IC REG BUCK 56VQFN
Packaging: Tape & Reel (TR)
Package / Case: 56-VFQFN Exposed Pad
Output Type: PWM
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 200kHz ~ 2MHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 3.3V
Supplier Device Package: PG-VQFN-56-900
Synchronous Rectifier: No
Control Features: Enable, Power Good
Serial Interfaces: I²C, PMBus, SMBus
Output Phases: 6
Clock Sync: No
Part Status: Obsolete
Number of Outputs: 8
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| FS225R17OE4BOSA1 |
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Виробник: Infineon Technologies
Description: IGBT MOD 1700V 350A 1450W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 225A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 350 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 1450 W
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 600 pF @ 25 V
Description: IGBT MOD 1700V 350A 1450W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 225A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 350 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 1450 W
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 600 pF @ 25 V
на замовлення 1 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 24405.17 грн |
| SAK-TC265DE-40F200N BC |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 2.5MB FLASH 176LQFP
Packaging: Tape & Reel (TR)
Package / Case: 176-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 2.5MB (2.5M x 8)
RAM Size: 240K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 16K x 8
Core Processor: TriCore™
Data Converters: A/D 53x12b SAR, Sigma-Delta
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 1.17V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I²C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, POR, WDT
Supplier Device Package: PG-LQFP-176-22
Part Status: Active
Description: IC MCU 32BIT 2.5MB FLASH 176LQFP
Packaging: Tape & Reel (TR)
Package / Case: 176-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 2.5MB (2.5M x 8)
RAM Size: 240K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 16K x 8
Core Processor: TriCore™
Data Converters: A/D 53x12b SAR, Sigma-Delta
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 1.17V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I²C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, POR, WDT
Supplier Device Package: PG-LQFP-176-22
Part Status: Active
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| F4200R17N3E4B58BPSA1 |
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Виробник: Infineon Technologies
Description: LOW POWER ECONO AG-ECONO3B-411
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Full Bridge Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 200A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO3B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 16 nF @ 25 V
Description: LOW POWER ECONO AG-ECONO3B-411
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Full Bridge Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 200A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO3B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 16 nF @ 25 V
на замовлення 2 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 11433.86 грн |
| CY7C168A-20PXC |
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Виробник: Infineon Technologies
Description: IC SRAM 16KBIT PARALLEL 20DIP
Packaging: Tube
Package / Case: 20-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Memory Size: 16Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 20-DIP
Write Cycle Time - Word, Page: 20ns
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 4K x 4
DigiKey Programmable: Not Verified
Description: IC SRAM 16KBIT PARALLEL 20DIP
Packaging: Tube
Package / Case: 20-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Memory Size: 16Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 20-DIP
Write Cycle Time - Word, Page: 20ns
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 4K x 4
DigiKey Programmable: Not Verified
на замовлення 1255 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 42+ | 553.28 грн |
| DCSHIELDBTN7030TOBO1 |
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Виробник: Infineon Technologies
Description: DC-SHIELD_BTN7030
Packaging: Bulk
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTN7030-1EPA
Platform: Arduino
Part Status: Active
Description: DC-SHIELD_BTN7030
Packaging: Bulk
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTN7030-1EPA
Platform: Arduino
Part Status: Active
на замовлення 6 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 3537.78 грн |
| DCSHIELDBTN9970LVTOBO1 |
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Виробник: Infineon Technologies
Description: DC SHIELD EVAL BOARD
Packaging: Bulk
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTN9970, BTN9990
Platform: Arduino
Part Status: Active
Description: DC SHIELD EVAL BOARD
Packaging: Bulk
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTN9970, BTN9990
Platform: Arduino
Part Status: Active
на замовлення 33 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 5006.99 грн |
| 2EDN7524RXTMA1 |
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Виробник: Infineon Technologies
Description: IC GATE DRVR LOW-SIDE 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: PG-TSSOP-8
Rise / Fall Time (Typ): 5.3ns, 4.5ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.98V
Current - Peak Output (Source, Sink): 5A, 5A
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC GATE DRVR LOW-SIDE 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: PG-TSSOP-8
Rise / Fall Time (Typ): 5.3ns, 4.5ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.98V
Current - Peak Output (Source, Sink): 5A, 5A
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 14110 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 62.48 грн |
| 10+ | 42.99 грн |
| 25+ | 38.76 грн |
| 100+ | 31.95 грн |
| 250+ | 29.84 грн |
| 500+ | 28.57 грн |
| 1000+ | 27.08 грн |
| 2500+ | 25.99 грн |
| 2EDN8524RXTMA1 |
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Виробник: Infineon Technologies
Description: IC GATE DRVR LOW-SIDE 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: PG-TSSOP-8
Rise / Fall Time (Typ): 5.3ns, 4.5ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.98V
Current - Peak Output (Source, Sink): 5A, 5A
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC GATE DRVR LOW-SIDE 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: PG-TSSOP-8
Rise / Fall Time (Typ): 5.3ns, 4.5ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.98V
Current - Peak Output (Source, Sink): 5A, 5A
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 3566 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 74.82 грн |
| 10+ | 51.86 грн |
| 25+ | 46.84 грн |
| 100+ | 38.76 грн |
| 250+ | 36.29 грн |
| 500+ | 34.80 грн |
| 1000+ | 33.02 грн |
| 2500+ | 31.75 грн |
| 2EDN7523RXTMA1 |
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Виробник: Infineon Technologies
Description: IC GATE DRVR LOW-SIDE 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: PG-TSSOP-8
Rise / Fall Time (Typ): 5.3ns, 4.5ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.98V
Current - Peak Output (Source, Sink): 5A, 5A
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC GATE DRVR LOW-SIDE 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: PG-TSSOP-8
Rise / Fall Time (Typ): 5.3ns, 4.5ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.98V
Current - Peak Output (Source, Sink): 5A, 5A
Part Status: Active
DigiKey Programmable: Not Verified
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В кошику
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| IPL65R230C7AUMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 10A 4VSON
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 2.4A, 10V
Power Dissipation (Max): 67W (Tc)
Vgs(th) (Max) @ Id: 4V @ 240µA
Supplier Device Package: PG-VSON-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 996 pF @ 400 V
Description: MOSFET N-CH 650V 10A 4VSON
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 2.4A, 10V
Power Dissipation (Max): 67W (Tc)
Vgs(th) (Max) @ Id: 4V @ 240µA
Supplier Device Package: PG-VSON-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 996 pF @ 400 V
на замовлення 11039 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 243.36 грн |
| 10+ | 152.41 грн |
| 100+ | 105.65 грн |
| 500+ | 80.41 грн |
| 1000+ | 74.39 грн |
| EVALIM67D120FLEXKITTOBO1 |
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Виробник: Infineon Technologies
Description: EVAL BOARD FOR IM67D120
Packaging: Bulk
Function: MEMS Omnidirectional Microphones
Type: Audio
Contents: Board(s)
Utilized IC / Part: IM67D120
Supplied Contents: Board(s)
Embedded: No
Part Status: Active
Description: EVAL BOARD FOR IM67D120
Packaging: Bulk
Function: MEMS Omnidirectional Microphones
Type: Audio
Contents: Board(s)
Utilized IC / Part: IM67D120
Supplied Contents: Board(s)
Embedded: No
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
| AN985B-BG-T-V1 |
Виробник: Infineon Technologies
Description: CARDBUS-TO ETHERNET LAN CONTROLL
Packaging: Bulk
DigiKey Programmable: Not Verified
Description: CARDBUS-TO ETHERNET LAN CONTROLL
Packaging: Bulk
DigiKey Programmable: Not Verified
на замовлення 1440 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 102+ | 228.79 грн |
| SAK-TC265DC-40F200W BC |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT
Description: IC MCU 32BIT
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| SAK-TC265DC-40F200W BB |
Виробник: Infineon Technologies
Description: IC MCU 32BIT 2.5MB FLASH 176LQFP
Packaging: Tape & Reel (TR)
Package / Case: 176-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 2.5MB (2.5M x 8)
RAM Size: 240K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 96K x 8
Core Processor: TriCore™
Data Converters: A/D 50x12b SAR, Sigma-Delta
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 1.17V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I²C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, WDT
Supplier Device Package: PG-LQFP-176-22
Number of I/O: 112
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 2.5MB FLASH 176LQFP
Packaging: Tape & Reel (TR)
Package / Case: 176-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 2.5MB (2.5M x 8)
RAM Size: 240K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 96K x 8
Core Processor: TriCore™
Data Converters: A/D 50x12b SAR, Sigma-Delta
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 1.17V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I²C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, WDT
Supplier Device Package: PG-LQFP-176-22
Number of I/O: 112
DigiKey Programmable: Not Verified
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| SAK-TC265DE-40F200W BB |
Виробник: Infineon Technologies
Description: IC MICROCONTROLLER
Description: IC MICROCONTROLLER
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| SAK-TC265DE-40F200Q BB |
Виробник: Infineon Technologies
Description: IC MICROCONTROLLER
Description: IC MICROCONTROLLER
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| S25FL116K0XBHI030 |
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Виробник: Infineon Technologies
Description: IC FLASH 16MBIT SPI/QUAD 24BGA
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 108 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (6x8)
Write Cycle Time - Word, Page: 3ms
Memory Interface: SPI - Quad I/O
Memory Organization: 2M x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 16MBIT SPI/QUAD 24BGA
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 108 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (6x8)
Write Cycle Time - Word, Page: 3ms
Memory Interface: SPI - Quad I/O
Memory Organization: 2M x 8
DigiKey Programmable: Not Verified
на замовлення 10 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| S25FL116K0XMFN041 |
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Виробник: Infineon Technologies
Description: IC FLASH 16MBIT SPI/QUAD 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 108 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 3ms
Memory Interface: SPI - Quad I/O
Memory Organization: 2M x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 16MBIT SPI/QUAD 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 108 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 3ms
Memory Interface: SPI - Quad I/O
Memory Organization: 2M x 8
DigiKey Programmable: Not Verified
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| S25FL116K0XNFB013 |
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Виробник: Infineon Technologies
Description: IC FLASH 16MBIT SPI/QUAD 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 108 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 3ms
Memory Interface: SPI - Quad I/O
Memory Organization: 2M x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 16MBIT SPI/QUAD 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 108 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 3ms
Memory Interface: SPI - Quad I/O
Memory Organization: 2M x 8
DigiKey Programmable: Not Verified
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| S25FL116K0XBHB030 |
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Виробник: Infineon Technologies
Description: IC FLASH 16MBIT SPI/QUAD 24BGA
Description: IC FLASH 16MBIT SPI/QUAD 24BGA
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| S25FL116K0XMFB041 |
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Виробник: Infineon Technologies
Description: IC FLASH 16MBIT SPI/QUAD 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 108 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 3ms
Memory Interface: SPI - Quad I/O
Memory Organization: 2M x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 16MBIT SPI/QUAD 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 108 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 3ms
Memory Interface: SPI - Quad I/O
Memory Organization: 2M x 8
DigiKey Programmable: Not Verified
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| S25FL116K0XNFB010 |
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Виробник: Infineon Technologies
Description: IC FLASH 16MBIT SPI/QUAD 8SOIC
Packaging: Tray
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 108 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 3ms
Memory Interface: SPI - Quad I/O
Memory Organization: 2M x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 16MBIT SPI/QUAD 8SOIC
Packaging: Tray
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 108 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 3ms
Memory Interface: SPI - Quad I/O
Memory Organization: 2M x 8
DigiKey Programmable: Not Verified
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| S25FL116K0XMFB043 |
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Виробник: Infineon Technologies
Description: IC FLASH 16MBIT SPI/QUAD 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 108 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 3ms
Memory Interface: SPI - Quad I/O
Memory Organization: 2M x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 16MBIT SPI/QUAD 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 108 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 3ms
Memory Interface: SPI - Quad I/O
Memory Organization: 2M x 8
DigiKey Programmable: Not Verified
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| ISC036N04NM5ATMA1 |
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Виробник: Infineon Technologies
Description: 40V 3.6M OPTIMOS MOSFET SUPERSO8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 98A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 49A, 10V
Power Dissipation (Max): 3W (Ta), 63W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 23µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 20 V
Description: 40V 3.6M OPTIMOS MOSFET SUPERSO8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 98A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 49A, 10V
Power Dissipation (Max): 3W (Ta), 63W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 23µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 20 V
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| ISC036N04NM5ATMA1 |
![]() |
Виробник: Infineon Technologies
Description: 40V 3.6M OPTIMOS MOSFET SUPERSO8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 98A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 49A, 10V
Power Dissipation (Max): 3W (Ta), 63W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 23µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 20 V
Description: 40V 3.6M OPTIMOS MOSFET SUPERSO8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 98A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 49A, 10V
Power Dissipation (Max): 3W (Ta), 63W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 23µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 20 V
на замовлення 3238 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 101.95 грн |
| 10+ | 61.52 грн |
| 100+ | 40.75 грн |
| 500+ | 29.88 грн |
| 1000+ | 26.42 грн |
| 2000+ | 24.92 грн |
| TDA21590AUMA1 |
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Виробник: Infineon Technologies
Description: IC REG BUCK 39QFN
Packaging: Cut Tape (CT)
Package / Case: 39-PowerVFQFN
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Output Configuration: Positive
Topology: Buck
Supplier Device Package: PG-IQFN-39
Synchronous Rectifier: No
Part Status: Active
Description: IC REG BUCK 39QFN
Packaging: Cut Tape (CT)
Package / Case: 39-PowerVFQFN
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Output Configuration: Positive
Topology: Buck
Supplier Device Package: PG-IQFN-39
Synchronous Rectifier: No
Part Status: Active
на замовлення 39903 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 343.67 грн |
| 10+ | 251.53 грн |
| 25+ | 231.81 грн |
| 100+ | 197.22 грн |
| 250+ | 187.52 грн |
| 500+ | 181.68 грн |
| 1000+ | 173.97 грн |
| 2500+ | 168.97 грн |
| BB 689 E7903 |
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Виробник: Infineon Technologies
Description: DIODE TUNING 30V 20MA SCD-80
Packaging: Tape & Reel (TR)
Package / Case: SC-80
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Vr, F: 2.9pF @ 28V, 1MHz
Capacitance Ratio Condition: C1/C28
Supplier Device Package: SCD-80
Voltage - Peak Reverse (Max): 30 V
Capacitance Ratio: 23.2
Description: DIODE TUNING 30V 20MA SCD-80
Packaging: Tape & Reel (TR)
Package / Case: SC-80
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Vr, F: 2.9pF @ 28V, 1MHz
Capacitance Ratio Condition: C1/C28
Supplier Device Package: SCD-80
Voltage - Peak Reverse (Max): 30 V
Capacitance Ratio: 23.2
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| IDD05SG60C |
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Виробник: Infineon Technologies
Description: DIODE SIL CARB 600V 5A TO252-3
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 110pF @ 1V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: PG-TO252-3
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 5 A
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
Description: DIODE SIL CARB 600V 5A TO252-3
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 110pF @ 1V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: PG-TO252-3
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 5 A
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
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| IDH03SG60C |
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Виробник: Infineon Technologies
Description: DIODE SIL CARB 600V 3A TO220-2-2
Packaging: Bulk
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 60pF @ 1V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: PG-TO220-2-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 3 A
Current - Reverse Leakage @ Vr: 15 µA @ 600 V
Description: DIODE SIL CARB 600V 3A TO220-2-2
Packaging: Bulk
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 60pF @ 1V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: PG-TO220-2-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 3 A
Current - Reverse Leakage @ Vr: 15 µA @ 600 V
на замовлення 68889 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 288+ | 78.75 грн |
| IMZA65R083M1HXKSA1 |
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Виробник: Infineon Technologies
Description: SILICON CARBIDE MOSFET, PG-TO247
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 111mOhm @ 11.2A, 18V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 3.3mA
Supplier Device Package: PG-TO247-4-3
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +20V, -2V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 624 pF @ 400 V
Description: SILICON CARBIDE MOSFET, PG-TO247
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 111mOhm @ 11.2A, 18V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 3.3mA
Supplier Device Package: PG-TO247-4-3
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +20V, -2V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 624 pF @ 400 V
на замовлення 44 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 978.38 грн |
| 10+ | 866.14 грн |










































