Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (126757) > Сторінка 459 з 2113
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
CHL8214-07CRT | Infineon Technologies |
Description: IC REG BUCK 40VQFN |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
TLE72732GV33XUMA1 | Infineon Technologies |
Description: IC REG LIN 3.3V 180MA PG-DSO-14Qualification: AEC-Q100 Grade: Automotive Protection Features: Over Current, Over Temperature, Short Circuit Voltage Dropout (Max): 0.5V @ 180mA PSRR: 60dB (100Hz) Part Status: Active Control Features: Enable, Reset, Watchdog Voltage - Output (Min/Fixed): 3.3V Supplier Device Package: PG-DSO-14 Number of Regulators: 1 Voltage - Input (Max): 45V Current - Quiescent (Iq): 36 µA Output Configuration: Positive Operating Temperature: -40°C ~ 150°C Current - Output: 180mA Mounting Type: Surface Mount Output Type: Fixed Package / Case: 14-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
EVALM5IGBT7TOBO1 | Infineon Technologies |
Description: EVAL BOARD FOR M5-IGBT7Part Status: Active Embedded: Yes, MCU, 32-Bit Primary Attributes: 3-Phase Motor Control, IGBT Intelligent Power Module Supplied Contents: Board(s), Cable(s) Utilized IC / Part: M5-IGBT7 Type: Power Management Function: Motor Controller/Driver Packaging: Bulk Secondary Attributes: On-Board LEDs, Test Points Contents: Board(s), Cable(s) |
на замовлення 3 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
|
ILD4001 1.0A BOARD | Infineon Technologies |
Description: EVAL BOARD FOR ILD4001Features: Dimmable Packaging: Box Voltage - Input: 4.5V ~ 30V Current - Output / Channel: 1A Utilized IC / Part: ILD4001 Supplied Contents: Board(s) Outputs and Type: 1, Non-Isolated |
на замовлення 3 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
| BSM50GP60_B2 | Infineon Technologies |
Description: IGBT MODULEPackaging: Bulk |
на замовлення 320 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||
| BSM50GP60GBOSA1 | Infineon Technologies |
Description: IGBT MODULE 600V 70A 250W MODULE Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Three Phase Bridge Rectifier Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 125°C Vce(on) (Max) @ Vge, Ic: 2.55V @ 15V, 50A NTC Thermistor: Yes Supplier Device Package: Module Part Status: Obsolete Current - Collector (Ic) (Max): 70 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 250 W Current - Collector Cutoff (Max): 500 µA Input Capacitance (Cies) @ Vce: 2.8 nF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| BSM50GD170DLBOSA1 | Infineon Technologies |
Description: IGBT MOD 1700V 100A 480W MOD Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Full Bridge Operating Temperature: -40°C ~ 125°C Vce(on) (Max) @ Vge, Ic: 3.3V @ 15V, 50A NTC Thermistor: No Supplier Device Package: Module Part Status: Obsolete Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 1700 V Power - Max: 480 W Current - Collector Cutoff (Max): 100 µA Input Capacitance (Cies) @ Vce: 3.5 nF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
|
BSM50GB60DLCHOSA1 | Infineon Technologies |
Description: IGBT MODULE 600V 75A 280W MODULEPackaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -40°C ~ 125°C Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 50A NTC Thermistor: No Supplier Device Package: Module Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 280 W Current - Collector Cutoff (Max): 500 µA Input Capacitance (Cies) @ Vce: 2.2 nF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| BSM50GD60DLCBOSA1 | Infineon Technologies |
Description: IGBT MODULE 600V 70A 250W MODULE Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 125°C Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 50A NTC Thermistor: No Supplier Device Package: Module Part Status: Obsolete Current - Collector (Ic) (Max): 70 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 250 W Current - Collector Cutoff (Max): 500 µA Input Capacitance (Cies) @ Vce: 2.2 nF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| BSM50GX120DN2BPSA1 | Infineon Technologies |
Description: LOW POWER ECONO AG-ECONO2A-211 Packaging: Tray Part Status: Last Time Buy |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
|
IPN60R600PFD7SATMA1 | Infineon Technologies |
Description: CONSUMER PG-SOT223-3Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 1.7A, 10V Power Dissipation (Max): 7W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 80µA Supplier Device Package: PG-SOT223-4 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 344 pF @ 400 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
IPN60R600PFD7SATMA1 | Infineon Technologies |
Description: CONSUMER PG-SOT223-3Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 1.7A, 10V Power Dissipation (Max): 7W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 80µA Supplier Device Package: PG-SOT223-4 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 344 pF @ 400 V |
на замовлення 5500 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
BTS70401EPZXUMA1 | Infineon Technologies |
Description: PROFET PG-TSDSO-14Features: Slew Rate Controlled Packaging: Tape & Reel (TR) Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 175°C (TJ) Output Configuration: High Side Rds On (Typ): 19mOhm Input Type: Non-Inverting Voltage - Load: 6V ~ 18V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 4.5A Ratio - Input:Output: 1:1 Supplier Device Package: PG-TDSO-14-11 Fault Protection: Over Current, Over Temperature, Over Voltage, Short Circuit Grade: Automotive Part Status: Active Qualification: AEC-Q100 |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
|
BTS70401EPZXUMA1 | Infineon Technologies |
Description: PROFET PG-TSDSO-14Packaging: Cut Tape (CT) Features: Slew Rate Controlled Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 175°C (TJ) Output Configuration: High Side Rds On (Typ): 19mOhm Input Type: Non-Inverting Voltage - Load: 6V ~ 18V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 4.5A Ratio - Input:Output: 1:1 Supplier Device Package: PG-TDSO-14-11 Fault Protection: Over Current, Over Temperature, Over Voltage, Short Circuit Part Status: Active Grade: Automotive Qualification: AEC-Q100 |
на замовлення 2450 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
CY7C1312KV18-250BZC | Infineon Technologies |
Description: IC SRAM 18MBIT PAR 165FBGAMemory Size: 18Mbit Mounting Type: Surface Mount Package / Case: 165-LBGA Packaging: Bulk DigiKey Programmable: Not Verified Memory Organization: 1M x 18 Memory Interface: Parallel Supplier Device Package: 165-FBGA (13x15) Memory Format: SRAM Clock Frequency: 250 MHz Technology: SRAM - Synchronous, QDR II Voltage - Supply: 1.7V ~ 1.9V Operating Temperature: 0°C ~ 70°C (TA) Memory Type: Volatile |
на замовлення 336 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
IPD90P03P404ATMA2 | Infineon Technologies |
Description: MOSFET P-CH 30V 90A TO252-31Input Capacitance (Ciss) (Max) @ Vds: 10300 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Supplier Device Package: PG-TO252-3-11 Vgs(th) (Max) @ Id: 4V @ 253µA Power Dissipation (Max): 137W (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 90A, 10V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Grade: Automotive |
на замовлення 7500 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
IPD90P03P404ATMA2 | Infineon Technologies |
Description: MOSFET P-CH 30V 90A TO252-31Power Dissipation (Max): 137W (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 90A, 10V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 10300 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Supplier Device Package: PG-TO252-3-11 Vgs(th) (Max) @ Id: 4V @ 253µA Qualification: AEC-Q101 Grade: Automotive |
на замовлення 10986 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
IPB80P03P405ATMA2 | Infineon Technologies |
Description: MOSFET_(20V 40V) PG-TO263-3Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 10300 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: PG-TO263-3-2 Vgs(th) (Max) @ Id: 4V @ 253µA Power Dissipation (Max): 137W (Tc) Rds On (Max) @ Id, Vgs: 4.7mOhm @ 80A, 10V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
|
DEMOBOARDTLE4242GTOBO1 | Infineon Technologies |
Description: EVAL BOARD FOR TLE4242GPackaging: Box Voltage - Output: 6V ~ 8V Voltage - Input: 8V ~ 16V Current - Output / Channel: 370mA Utilized IC / Part: TLE4242G Supplied Contents: Board(s) Outputs and Type: 1 Non-Isolated Output Part Status: Active |
на замовлення 3 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
CY8C28433-24PVXIT | Infineon Technologies |
Description: IC MCU 8BIT 16KB FLASH 28SSOP |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||
|
BGB 420 E6327 | Infineon Technologies |
Description: IC AMP 802.15 100MHZ-3GHZ SOT343Packaging: Tape & Reel (TR) Package / Case: SC-82A, SOT-343 Mounting Type: Surface Mount Frequency: 100MHz ~ 3GHz RF Type: 802.15/Bluetooth, ISM, WLAN, GSM, GPS, DCS, UMTS Voltage - Supply: 3.5V Gain: 16dB Current - Supply: 30mA Noise Figure: 2dB P1dB: 10dBm Test Frequency: 1.8GHz Supplier Device Package: PG-SOT343-3D |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
| FZ1000R33HL3B60BOSA1 | Infineon Technologies |
Description: IHV IHM T XHP 3 3-6 5K AG-IHVB13 Input Capacitance (Cies) @ Vce: 190 nF @ 25 V Current - Collector Cutoff (Max): 5 mA Power - Max: 1.6 MW Voltage - Collector Emitter Breakdown (Max): 3300 V Current - Collector (Ic) (Max): 1000 A Part Status: Last Time Buy IGBT Type: Trench Field Stop Supplier Device Package: AG-IHVB130-3 NTC Thermistor: No Vce(on) (Max) @ Vge, Ic: 2.85V @ 15V, 1kA Operating Temperature: -40°C ~ 150°C (TJ) Configuration: Dual Brake Chopper Input: Standard Mounting Type: Chassis Mount Package / Case: Module Packaging: Tray |
товару немає в наявності |
Мінімальне замовлення: 2 шт В кошику од. на суму грн. | |||||||||||||||
|
CY9BF518SPMC-GK7E1 | Infineon Technologies |
Description: IC MCU 32BIT 1MB FLASH 144LQFPPackaging: Tray Package / Case: 144-LQFP Mounting Type: Surface Mount Speed: 144MHz Program Memory Size: 1MB (1M x 8) RAM Size: 128K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M3 Data Converters: A/D 24x12b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Connectivity: CANbus, CSIO, EBI/EMI, I²C, LINbus, UART/USART, USB Peripherals: DMA, LVD, POR, PWM, WDT Supplier Device Package: 144-LQFP (20x20) Part Status: Obsolete Number of I/O: 122 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
CY9BF516NBGL-GE1 | Infineon Technologies |
Description: IC MCU 32BIT 512KB FLSH 112PFBGAPackaging: Tray Package / Case: 112-LFBGA Mounting Type: Surface Mount Speed: 144MHz Program Memory Size: 512KB (512K x 8) RAM Size: 64K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M3 Data Converters: A/D 16x12b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Connectivity: CANbus, CSIO, EBI/EMI, I²C, LINbus, UART/USART, USB Peripherals: DMA, LVD, POR, PWM, WDT Supplier Device Package: 112-PFBGA (10x10) Part Status: Obsolete Number of I/O: 83 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| IPI032N06N3GE8214AKSA1 | Infineon Technologies |
Description: MOSFET N-CH 60V TO262-3 Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: PG-TO262-3-1 Vgs(th) (Max) @ Id: 4V @ 118µA Power Dissipation (Max): 188W (Tc) Rds On (Max) @ Id, Vgs: 3.2mOhm @ 100A, 10V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
|
BSL316CL6327 | Infineon Technologies |
Description: P-CHANNEL MOSFETPart Status: Active Supplier Device Package: PG-TSOP6-6 Vgs(th) (Max) @ Id: 2V @ 3.7µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 5V Rds On (Max) @ Id, Vgs: 160mOhm @ 1.4A, 10V Input Capacitance (Ciss) (Max) @ Vds: 94pF @ 15V Current - Continuous Drain (Id) @ 25°C: 1.4A, 1.5A Drain to Source Voltage (Vdss): 30V Power - Max: 500mW Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: N and P-Channel Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
IPL60R185C7AUMA1 | Infineon Technologies |
Description: MOSFET N-CH 600V 13A 4VSONInput Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: PG-VSON-4 Vgs(th) (Max) @ Id: 4V @ 260µA Power Dissipation (Max): 77W (Tc) Rds On (Max) @ Id, Vgs: 185mOhm @ 5.3A, 10V Current - Continuous Drain (Id) @ 25°C: 13A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-PowerTSFN Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
|
IPD70P04P4L08ATMA2 | Infineon Technologies |
Description: MOSFET P-CH 40V 70A TO252-3Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 5430 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): +5V, -16V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: PG-TO252-3-313 Vgs(th) (Max) @ Id: 2.2V @ 120µA Power Dissipation (Max): 75W (Tc) Rds On (Max) @ Id, Vgs: 7.8mOhm @ 70A, 10V Current - Continuous Drain (Id) @ 25°C: 70A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
на замовлення 10096 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
IPD70P04P4L08ATMA1 | Infineon Technologies |
Description: MOSFET P-CH 40V 70A TO252-3Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 5430 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±16V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: PG-TO252-3-313 Vgs(th) (Max) @ Id: 2.2V @ 120µA Power Dissipation (Max): 75W (Tc) Rds On (Max) @ Id, Vgs: 7.8mOhm @ 70A, 10V Current - Continuous Drain (Id) @ 25°C: 70A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Qualification: AEC-Q101 Grade: Automotive |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
IPD70P04P4L08ATMA1 | Infineon Technologies |
Description: MOSFET P-CH 40V 70A TO252-3FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 5430 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±16V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: PG-TO252-3-313 Vgs(th) (Max) @ Id: 2.2V @ 120µA Power Dissipation (Max): 75W (Tc) Rds On (Max) @ Id, Vgs: 7.8mOhm @ 70A, 10V Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Qualification: AEC-Q101 Grade: Automotive |
на замовлення 4998 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
FD300R17KE4PHOSA1 | Infineon Technologies |
Description: IGBT MODULE 1700V 300A AG62MM-1Current - Collector Cutoff (Max): 1 mA Voltage - Collector Emitter Breakdown (Max): 1700 V Current - Collector (Ic) (Max): 300 A Part Status: Active IGBT Type: Trench Field Stop Supplier Device Package: AG-62MM-1 NTC Thermistor: No Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 300A Operating Temperature: -40°C ~ 150°C Configuration: Single Chopper Input: Standard Mounting Type: Chassis Mount Package / Case: Module Packaging: Tray |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
F3L200R07W2S5B11BOMA1 | Infineon Technologies |
Description: LOW POWER EASY AG-EASY2B-2 Packaging: Bulk |
на замовлення 150 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
F3L200R07W2S5B11BOMA1 | Infineon Technologies |
Description: LOW POWER EASY AG-EASY2B-2 Packaging: Tray |
на замовлення 15 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
BTS133TCAUMA1 | Infineon Technologies |
Description: IC PWR SWITCH Part Status: Not For New Designs Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, Short Circuit Supplier Device Package: PG-TO263-3-2 Ratio - Input:Output: 1:1 Current - Output (Max): 7A Voltage - Load: 60V Input Type: Non-Inverting Rds On (Typ): 40mOhm Output Configuration: Low Side Operating Temperature: -40°C ~ 150°C (TJ) Switch Type: General Purpose Interface: On/Off Number of Outputs: 1 Mounting Type: Surface Mount Output Type: N-Channel Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Features: Auto Restart, Slew Rate Controlled Packaging: Tape & Reel (TR) Voltage - Supply (Vcc/Vdd): Not Required |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||
|
BTS500701TMAATMA1 | Infineon Technologies |
Description: IC PWR SWITCH N-CHAN 1:1 TO220-7Features: Auto Restart Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: High Side Rds On (Typ): 7mOhm Input Type: Non-Inverting Voltage - Load: 5.5V ~ 30V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 12A Ratio - Input:Output: 1:1 Supplier Device Package: PG-TO220-7-4 Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||
|
BTS500701TMBAKSA1 | Infineon Technologies |
Description: IC PWR SWITCH N-CHAN 1:1 TO220-7Features: Auto Restart Packaging: Tube Package / Case: TO-220-7 Output Type: N-Channel Mounting Type: Through Hole Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: High Side Rds On (Typ): 7mOhm Input Type: Non-Inverting Voltage - Load: 5.5V ~ 30V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 12A Ratio - Input:Output: 1:1 Supplier Device Package: PG-TO220-7-12 Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage |
товару немає в наявності |
Мінімальне замовлення: 500 шт В кошику од. на суму грн. | ||||||||||||||
|
BCR 196T E6327 | Infineon Technologies |
Description: TRANS PREBIAS PNP 50V 0.07A SC75Resistors Included: R1 and R2 Resistor - Emitter Base (R2): 22 kOhms Resistor - Base (R1): 47 kOhms Frequency - Transition: 150 MHz Power - Max: 250 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 70 mA Supplier Device Package: PG-SC75-3D DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Transistor Type: PNP - Pre-Biased Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 15000 шт В кошику од. на суму грн. | ||||||||||||||
|
BCR 196F E6327 | Infineon Technologies |
Description: TRANS PREBIAS PNP 50V TSFP-3Resistors Included: R1 and R2 Resistor - Emitter Base (R2): 22 kOhms Resistor - Base (R1): 47 kOhms Frequency - Transition: 150 MHz Power - Max: 250 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 70 mA Supplier Device Package: PG-TSFP-3 DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Transistor Type: PNP - Pre-Biased Mounting Type: Surface Mount Package / Case: SOT-723 Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 39000 шт В кошику од. на суму грн. | ||||||||||||||
|
BCR 196L3 E6327 | Infineon Technologies |
Description: TRANS PREBIAS PNP 50V TSLP-3Resistors Included: R1 and R2 Resistor - Emitter Base (R2): 22 kOhms Resistor - Base (R1): 47 kOhms Frequency - Transition: 150 MHz Power - Max: 250 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 70 mA Supplier Device Package: PG-TSLP-3-4 DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Transistor Type: PNP - Pre-Biased Mounting Type: Surface Mount Package / Case: SC-101, SOT-883 Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 30000 шт В кошику од. на суму грн. | ||||||||||||||
|
EVALM13645ATOBO2 | Infineon Technologies |
Description: EVAL BOARD FOR IRSM836-045MAPackaging: Bulk Function: Motor Controller/Driver Type: Power Management Contents: Board(s) Utilized IC / Part: IRSM836-045MA Supplied Contents: Board(s) Primary Attributes: 165VAC ~ 265VAC Secondary Attributes: On-Board LEDs, Test Points Embedded: No Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| BSM100GB120DN2K | Infineon Technologies |
Description: INSULATED GATE BIPOLAR TRANSISTO |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| IDC05S60CEX1SA1 | Infineon Technologies |
Description: DIODE SIC 600V 5A SAWN WAFER |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| SIDC07D60F6X1SA2 | Infineon Technologies |
Description: DIODE GP 600V 22.5A WAFERCurrent - Reverse Leakage @ Vr: 27 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 22.5 A Voltage - DC Reverse (Vr) (Max): 600 V Operating Temperature - Junction: -40°C ~ 150°C Supplier Device Package: Sawn on foil Current - Average Rectified (Io): 22.5A Technology: Standard Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: Die Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| SIDC03D60F6X1SA2 | Infineon Technologies |
Description: DIODE GP 600V 6A WAFERCurrent - Reverse Leakage @ Vr: 27 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 6 A Voltage - DC Reverse (Vr) (Max): 600 V Operating Temperature - Junction: -40°C ~ 150°C Supplier Device Package: Sawn on foil Current - Average Rectified (Io): 6A Technology: Standard Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: Die Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| SIDC02D60C6X1SA4 | Infineon Technologies |
Description: DIODE GP 600V 6A WAFERCurrent - Reverse Leakage @ Vr: 27 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 6 A Voltage - DC Reverse (Vr) (Max): 600 V Operating Temperature - Junction: -40°C ~ 175°C Supplier Device Package: Sawn on foil Current - Average Rectified (Io): 6A Technology: Standard Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: Die Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| SIDC03D120H6X1SA3 | Infineon Technologies |
Description: DIODE GP 1.2KV 3A WAFERCurrent - Reverse Leakage @ Vr: 27 µA @ 1200 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A Voltage - DC Reverse (Vr) (Max): 1200 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Sawn on foil Current - Average Rectified (Io): 3A Technology: Standard Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: Die Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| SIDC03D60C6X1SA2 | Infineon Technologies |
Description: DIODE GP 600V 10A WAFERCurrent - Reverse Leakage @ Vr: 27 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 10 A Voltage - DC Reverse (Vr) (Max): 600 V Operating Temperature - Junction: -40°C ~ 175°C Supplier Device Package: Sawn on foil Current - Average Rectified (Io): 10A Technology: Standard Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: Die Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| SIDC05D60C6X1SA2 | Infineon Technologies |
Description: DIODE GP 600V 15A WAFERCurrent - Reverse Leakage @ Vr: 27 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 15 A Voltage - DC Reverse (Vr) (Max): 600 V Operating Temperature - Junction: -40°C ~ 175°C Supplier Device Package: Sawn on foil Current - Average Rectified (Io): 15A Technology: Standard Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: Die Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| SIDC02D60F6X1SA1 | Infineon Technologies |
Description: DIODE GP 600V 3A WAFERCurrent - Reverse Leakage @ Vr: 27 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A Voltage - DC Reverse (Vr) (Max): 600 V Operating Temperature - Junction: -40°C ~ 150°C Supplier Device Package: Sawn on foil Current - Average Rectified (Io): 3A Technology: Standard Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: Die Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| SIDC02D60C8F1SA1 | Infineon Technologies | Description: DIODE SWITCHING 600V 6A WAFER |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| SIDC07D60F6X7SA1 | Infineon Technologies | Description: DIODE SWITCHING 600V WAFER |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| SIDC07D60F6X1SA5 | Infineon Technologies |
Description: DIODE SWITCHING 600V WAFER |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| SIDC03D120F6X1SA1 | Infineon Technologies |
Description: DIODE GP 1.2KV 2A WAFERCurrent - Reverse Leakage @ Vr: 27 µA @ 1200 V Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 2 A Voltage - DC Reverse (Vr) (Max): 1200 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Sawn on foil Current - Average Rectified (Io): 2A Technology: Standard Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: Die Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| SIDC07D60E6X1SA1 | Infineon Technologies |
Description: DIODE GP 600V 15A WAFERCurrent - Reverse Leakage @ Vr: 250 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 15 A Voltage - DC Reverse (Vr) (Max): 600 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Sawn on foil Current - Average Rectified (Io): 15A Technology: Standard Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: Die Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| SIDC03D60C8X7SA2 | Infineon Technologies | Description: DIODE SWITCHING 600V 10A WAFER |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
|
BCR166E6393HTSA1 | Infineon Technologies |
Description: TRANS PREBIASPackaging: Bulk Part Status: Active |
на замовлення 182000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
MB96F646RBPMC-GS-107JAE2 | Infineon Technologies | Description: IC MCU 16BIT 288KB FLASH 100LQFP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
BTT3050EJXUMA1 | Infineon Technologies |
Description: 50 M SINGLE CHANNEL SMART LOW-SIPackaging: Tape & Reel (TR) Features: Slew Rate Controlled Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Low Side Rds On (Typ): 50mOhm Input Type: Non-Inverting Voltage - Load: 6V ~ 36V Voltage - Supply (Vcc/Vdd): 3.3V ~ 5.5V Current - Output (Max): 4A Ratio - Input:Output: 1:1 Supplier Device Package: PG-TDSO-8-31 Fault Protection: Current Limiting (Fixed), Over Load, Over Temperature, Over Voltage, Short Circuit Part Status: Active |
на замовлення 45000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
BTT3050EJXUMA1 | Infineon Technologies |
Description: 50 M SINGLE CHANNEL SMART LOW-SIPackaging: Cut Tape (CT) Features: Slew Rate Controlled Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Low Side Rds On (Typ): 50mOhm Input Type: Non-Inverting Voltage - Load: 6V ~ 36V Voltage - Supply (Vcc/Vdd): 3.3V ~ 5.5V Current - Output (Max): 4A Ratio - Input:Output: 1:1 Supplier Device Package: PG-TDSO-8-31 Fault Protection: Current Limiting (Fixed), Over Load, Over Temperature, Over Voltage, Short Circuit Part Status: Active |
на замовлення 46593 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
BTS129E3045ANTMA1 | Infineon Technologies |
Description: N-CHANNEL POWER MOSFETPackaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 27A (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 17A, 10V Power Dissipation (Max): 75W Vgs(th) (Max) @ Id: 3.5V @ 1mA Supplier Device Package: PG-TO220-3-1 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 25 V |
на замовлення 2997 шт: термін постачання 21-31 дні (днів) |
|
| CHL8214-07CRT |
![]() |
Виробник: Infineon Technologies
Description: IC REG BUCK 40VQFN
Description: IC REG BUCK 40VQFN
товару немає в наявності
В кошику
од. на суму грн.
| TLE72732GV33XUMA1 |
![]() |
Виробник: Infineon Technologies
Description: IC REG LIN 3.3V 180MA PG-DSO-14
Qualification: AEC-Q100
Grade: Automotive
Protection Features: Over Current, Over Temperature, Short Circuit
Voltage Dropout (Max): 0.5V @ 180mA
PSRR: 60dB (100Hz)
Part Status: Active
Control Features: Enable, Reset, Watchdog
Voltage - Output (Min/Fixed): 3.3V
Supplier Device Package: PG-DSO-14
Number of Regulators: 1
Voltage - Input (Max): 45V
Current - Quiescent (Iq): 36 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C
Current - Output: 180mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: IC REG LIN 3.3V 180MA PG-DSO-14
Qualification: AEC-Q100
Grade: Automotive
Protection Features: Over Current, Over Temperature, Short Circuit
Voltage Dropout (Max): 0.5V @ 180mA
PSRR: 60dB (100Hz)
Part Status: Active
Control Features: Enable, Reset, Watchdog
Voltage - Output (Min/Fixed): 3.3V
Supplier Device Package: PG-DSO-14
Number of Regulators: 1
Voltage - Input (Max): 45V
Current - Quiescent (Iq): 36 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C
Current - Output: 180mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 194.27 грн |
| 10+ | 139.58 грн |
| 25+ | 127.73 грн |
| 100+ | 107.59 грн |
| 250+ | 101.73 грн |
| 500+ | 99.58 грн |
| EVALM5IGBT7TOBO1 |
![]() |
Виробник: Infineon Technologies
Description: EVAL BOARD FOR M5-IGBT7
Part Status: Active
Embedded: Yes, MCU, 32-Bit
Primary Attributes: 3-Phase Motor Control, IGBT Intelligent Power Module
Supplied Contents: Board(s), Cable(s)
Utilized IC / Part: M5-IGBT7
Type: Power Management
Function: Motor Controller/Driver
Packaging: Bulk
Secondary Attributes: On-Board LEDs, Test Points
Contents: Board(s), Cable(s)
Description: EVAL BOARD FOR M5-IGBT7
Part Status: Active
Embedded: Yes, MCU, 32-Bit
Primary Attributes: 3-Phase Motor Control, IGBT Intelligent Power Module
Supplied Contents: Board(s), Cable(s)
Utilized IC / Part: M5-IGBT7
Type: Power Management
Function: Motor Controller/Driver
Packaging: Bulk
Secondary Attributes: On-Board LEDs, Test Points
Contents: Board(s), Cable(s)
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 57514.30 грн |
| ILD4001 1.0A BOARD |
![]() |
Виробник: Infineon Technologies
Description: EVAL BOARD FOR ILD4001
Features: Dimmable
Packaging: Box
Voltage - Input: 4.5V ~ 30V
Current - Output / Channel: 1A
Utilized IC / Part: ILD4001
Supplied Contents: Board(s)
Outputs and Type: 1, Non-Isolated
Description: EVAL BOARD FOR ILD4001
Features: Dimmable
Packaging: Box
Voltage - Input: 4.5V ~ 30V
Current - Output / Channel: 1A
Utilized IC / Part: ILD4001
Supplied Contents: Board(s)
Outputs and Type: 1, Non-Isolated
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1344.81 грн |
| BSM50GP60_B2 |
![]() |
на замовлення 320 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 4356.75 грн |
| BSM50GP60GBOSA1 |
Виробник: Infineon Technologies
Description: IGBT MODULE 600V 70A 250W MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.55V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: Module
Part Status: Obsolete
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 250 W
Current - Collector Cutoff (Max): 500 µA
Input Capacitance (Cies) @ Vce: 2.8 nF @ 25 V
Description: IGBT MODULE 600V 70A 250W MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.55V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: Module
Part Status: Obsolete
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 250 W
Current - Collector Cutoff (Max): 500 µA
Input Capacitance (Cies) @ Vce: 2.8 nF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| BSM50GD170DLBOSA1 |
Виробник: Infineon Technologies
Description: IGBT MOD 1700V 100A 480W MOD
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 3.3V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 480 W
Current - Collector Cutoff (Max): 100 µA
Input Capacitance (Cies) @ Vce: 3.5 nF @ 25 V
Description: IGBT MOD 1700V 100A 480W MOD
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 3.3V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 480 W
Current - Collector Cutoff (Max): 100 µA
Input Capacitance (Cies) @ Vce: 3.5 nF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| BSM50GB60DLCHOSA1 |
![]() |
Виробник: Infineon Technologies
Description: IGBT MODULE 600V 75A 280W MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 280 W
Current - Collector Cutoff (Max): 500 µA
Input Capacitance (Cies) @ Vce: 2.2 nF @ 25 V
Description: IGBT MODULE 600V 75A 280W MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 280 W
Current - Collector Cutoff (Max): 500 µA
Input Capacitance (Cies) @ Vce: 2.2 nF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| BSM50GD60DLCBOSA1 |
Виробник: Infineon Technologies
Description: IGBT MODULE 600V 70A 250W MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Obsolete
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 250 W
Current - Collector Cutoff (Max): 500 µA
Input Capacitance (Cies) @ Vce: 2.2 nF @ 25 V
Description: IGBT MODULE 600V 70A 250W MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Obsolete
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 250 W
Current - Collector Cutoff (Max): 500 µA
Input Capacitance (Cies) @ Vce: 2.2 nF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| BSM50GX120DN2BPSA1 |
Виробник: Infineon Technologies
Description: LOW POWER ECONO AG-ECONO2A-211
Packaging: Tray
Part Status: Last Time Buy
Description: LOW POWER ECONO AG-ECONO2A-211
Packaging: Tray
Part Status: Last Time Buy
товару немає в наявності
В кошику
од. на суму грн.
| IPN60R600PFD7SATMA1 |
![]() |
Виробник: Infineon Technologies
Description: CONSUMER PG-SOT223-3
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 1.7A, 10V
Power Dissipation (Max): 7W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 80µA
Supplier Device Package: PG-SOT223-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 344 pF @ 400 V
Description: CONSUMER PG-SOT223-3
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 1.7A, 10V
Power Dissipation (Max): 7W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 80µA
Supplier Device Package: PG-SOT223-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 344 pF @ 400 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 25.55 грн |
| IPN60R600PFD7SATMA1 |
![]() |
Виробник: Infineon Technologies
Description: CONSUMER PG-SOT223-3
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 1.7A, 10V
Power Dissipation (Max): 7W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 80µA
Supplier Device Package: PG-SOT223-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 344 pF @ 400 V
Description: CONSUMER PG-SOT223-3
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 1.7A, 10V
Power Dissipation (Max): 7W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 80µA
Supplier Device Package: PG-SOT223-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 344 pF @ 400 V
на замовлення 5500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 99.12 грн |
| 10+ | 60.02 грн |
| 100+ | 39.72 грн |
| 500+ | 29.08 грн |
| 1000+ | 26.44 грн |
| BTS70401EPZXUMA1 |
![]() |
Виробник: Infineon Technologies
Description: PROFET PG-TSDSO-14
Features: Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 175°C (TJ)
Output Configuration: High Side
Rds On (Typ): 19mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 18V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 4.5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TDSO-14-11
Fault Protection: Over Current, Over Temperature, Over Voltage, Short Circuit
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
Description: PROFET PG-TSDSO-14
Features: Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 175°C (TJ)
Output Configuration: High Side
Rds On (Typ): 19mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 18V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 4.5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TDSO-14-11
Fault Protection: Over Current, Over Temperature, Over Voltage, Short Circuit
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| BTS70401EPZXUMA1 |
![]() |
Виробник: Infineon Technologies
Description: PROFET PG-TSDSO-14
Packaging: Cut Tape (CT)
Features: Slew Rate Controlled
Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 175°C (TJ)
Output Configuration: High Side
Rds On (Typ): 19mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 18V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 4.5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TDSO-14-11
Fault Protection: Over Current, Over Temperature, Over Voltage, Short Circuit
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
Description: PROFET PG-TSDSO-14
Packaging: Cut Tape (CT)
Features: Slew Rate Controlled
Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 175°C (TJ)
Output Configuration: High Side
Rds On (Typ): 19mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 18V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 4.5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TDSO-14-11
Fault Protection: Over Current, Over Temperature, Over Voltage, Short Circuit
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2450 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 91.19 грн |
| 10+ | 63.68 грн |
| 25+ | 57.73 грн |
| 100+ | 47.93 грн |
| 250+ | 44.97 грн |
| 500+ | 43.18 грн |
| 1000+ | 41.76 грн |
| CY7C1312KV18-250BZC |
![]() |
Виробник: Infineon Technologies
Description: IC SRAM 18MBIT PAR 165FBGA
Memory Size: 18Mbit
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Packaging: Bulk
DigiKey Programmable: Not Verified
Memory Organization: 1M x 18
Memory Interface: Parallel
Supplier Device Package: 165-FBGA (13x15)
Memory Format: SRAM
Clock Frequency: 250 MHz
Technology: SRAM - Synchronous, QDR II
Voltage - Supply: 1.7V ~ 1.9V
Operating Temperature: 0°C ~ 70°C (TA)
Memory Type: Volatile
Description: IC SRAM 18MBIT PAR 165FBGA
Memory Size: 18Mbit
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Packaging: Bulk
DigiKey Programmable: Not Verified
Memory Organization: 1M x 18
Memory Interface: Parallel
Supplier Device Package: 165-FBGA (13x15)
Memory Format: SRAM
Clock Frequency: 250 MHz
Technology: SRAM - Synchronous, QDR II
Voltage - Supply: 1.7V ~ 1.9V
Operating Temperature: 0°C ~ 70°C (TA)
Memory Type: Volatile
на замовлення 336 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 2104.29 грн |
| IPD90P03P404ATMA2 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET P-CH 30V 90A TO252-31
Input Capacitance (Ciss) (Max) @ Vds: 10300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Supplier Device Package: PG-TO252-3-11
Vgs(th) (Max) @ Id: 4V @ 253µA
Power Dissipation (Max): 137W (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 90A, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Description: MOSFET P-CH 30V 90A TO252-31
Input Capacitance (Ciss) (Max) @ Vds: 10300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Supplier Device Package: PG-TO252-3-11
Vgs(th) (Max) @ Id: 4V @ 253µA
Power Dissipation (Max): 137W (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 90A, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 53.58 грн |
| IPD90P03P404ATMA2 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET P-CH 30V 90A TO252-31
Power Dissipation (Max): 137W (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 90A, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 10300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Supplier Device Package: PG-TO252-3-11
Vgs(th) (Max) @ Id: 4V @ 253µA
Qualification: AEC-Q101
Grade: Automotive
Description: MOSFET P-CH 30V 90A TO252-31
Power Dissipation (Max): 137W (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 90A, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 10300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Supplier Device Package: PG-TO252-3-11
Vgs(th) (Max) @ Id: 4V @ 253µA
Qualification: AEC-Q101
Grade: Automotive
на замовлення 10986 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 153.04 грн |
| 10+ | 107.13 грн |
| 100+ | 78.38 грн |
| 500+ | 60.45 грн |
| 1000+ | 59.26 грн |
| IPB80P03P405ATMA2 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET_(20V 40V) PG-TO263-3
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 10300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PG-TO263-3-2
Vgs(th) (Max) @ Id: 4V @ 253µA
Power Dissipation (Max): 137W (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Description: MOSFET_(20V 40V) PG-TO263-3
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 10300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PG-TO263-3-2
Vgs(th) (Max) @ Id: 4V @ 253µA
Power Dissipation (Max): 137W (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| DEMOBOARDTLE4242GTOBO1 |
![]() |
Виробник: Infineon Technologies
Description: EVAL BOARD FOR TLE4242G
Packaging: Box
Voltage - Output: 6V ~ 8V
Voltage - Input: 8V ~ 16V
Current - Output / Channel: 370mA
Utilized IC / Part: TLE4242G
Supplied Contents: Board(s)
Outputs and Type: 1 Non-Isolated Output
Part Status: Active
Description: EVAL BOARD FOR TLE4242G
Packaging: Box
Voltage - Output: 6V ~ 8V
Voltage - Input: 8V ~ 16V
Current - Output / Channel: 370mA
Utilized IC / Part: TLE4242G
Supplied Contents: Board(s)
Outputs and Type: 1 Non-Isolated Output
Part Status: Active
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 3093.22 грн |
| CY8C28433-24PVXIT |
![]() |
Виробник: Infineon Technologies
Description: IC MCU 8BIT 16KB FLASH 28SSOP
Description: IC MCU 8BIT 16KB FLASH 28SSOP
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| BGB 420 E6327 |
![]() |
Виробник: Infineon Technologies
Description: IC AMP 802.15 100MHZ-3GHZ SOT343
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Frequency: 100MHz ~ 3GHz
RF Type: 802.15/Bluetooth, ISM, WLAN, GSM, GPS, DCS, UMTS
Voltage - Supply: 3.5V
Gain: 16dB
Current - Supply: 30mA
Noise Figure: 2dB
P1dB: 10dBm
Test Frequency: 1.8GHz
Supplier Device Package: PG-SOT343-3D
Description: IC AMP 802.15 100MHZ-3GHZ SOT343
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Frequency: 100MHz ~ 3GHz
RF Type: 802.15/Bluetooth, ISM, WLAN, GSM, GPS, DCS, UMTS
Voltage - Supply: 3.5V
Gain: 16dB
Current - Supply: 30mA
Noise Figure: 2dB
P1dB: 10dBm
Test Frequency: 1.8GHz
Supplier Device Package: PG-SOT343-3D
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| FZ1000R33HL3B60BOSA1 |
Виробник: Infineon Technologies
Description: IHV IHM T XHP 3 3-6 5K AG-IHVB13
Input Capacitance (Cies) @ Vce: 190 nF @ 25 V
Current - Collector Cutoff (Max): 5 mA
Power - Max: 1.6 MW
Voltage - Collector Emitter Breakdown (Max): 3300 V
Current - Collector (Ic) (Max): 1000 A
Part Status: Last Time Buy
IGBT Type: Trench Field Stop
Supplier Device Package: AG-IHVB130-3
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.85V @ 15V, 1kA
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Dual Brake Chopper
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Description: IHV IHM T XHP 3 3-6 5K AG-IHVB13
Input Capacitance (Cies) @ Vce: 190 nF @ 25 V
Current - Collector Cutoff (Max): 5 mA
Power - Max: 1.6 MW
Voltage - Collector Emitter Breakdown (Max): 3300 V
Current - Collector (Ic) (Max): 1000 A
Part Status: Last Time Buy
IGBT Type: Trench Field Stop
Supplier Device Package: AG-IHVB130-3
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.85V @ 15V, 1kA
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Dual Brake Chopper
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
товару немає в наявності
Мінімальне замовлення: 2 шт
В кошику
од. на суму грн.
| CY9BF518SPMC-GK7E1 |
![]() |
Виробник: Infineon Technologies
Description: IC MCU 32BIT 1MB FLASH 144LQFP
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 144MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 24x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I²C, LINbus, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 144-LQFP (20x20)
Part Status: Obsolete
Number of I/O: 122
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 1MB FLASH 144LQFP
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 144MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 24x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I²C, LINbus, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 144-LQFP (20x20)
Part Status: Obsolete
Number of I/O: 122
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
| CY9BF516NBGL-GE1 |
![]() |
Виробник: Infineon Technologies
Description: IC MCU 32BIT 512KB FLSH 112PFBGA
Packaging: Tray
Package / Case: 112-LFBGA
Mounting Type: Surface Mount
Speed: 144MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 16x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I²C, LINbus, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 112-PFBGA (10x10)
Part Status: Obsolete
Number of I/O: 83
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 512KB FLSH 112PFBGA
Packaging: Tray
Package / Case: 112-LFBGA
Mounting Type: Surface Mount
Speed: 144MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 16x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I²C, LINbus, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 112-PFBGA (10x10)
Part Status: Obsolete
Number of I/O: 83
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
| IPI032N06N3GE8214AKSA1 |
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V TO262-3
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PG-TO262-3-1
Vgs(th) (Max) @ Id: 4V @ 118µA
Power Dissipation (Max): 188W (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Packaging: Tube
Description: MOSFET N-CH 60V TO262-3
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PG-TO262-3-1
Vgs(th) (Max) @ Id: 4V @ 118µA
Power Dissipation (Max): 188W (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Packaging: Tube
товару немає в наявності
В кошику
од. на суму грн.
| BSL316CL6327 |
![]() |
Виробник: Infineon Technologies
Description: P-CHANNEL MOSFET
Part Status: Active
Supplier Device Package: PG-TSOP6-6
Vgs(th) (Max) @ Id: 2V @ 3.7µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 5V
Rds On (Max) @ Id, Vgs: 160mOhm @ 1.4A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 94pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 1.4A, 1.5A
Drain to Source Voltage (Vdss): 30V
Power - Max: 500mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Bulk
Description: P-CHANNEL MOSFET
Part Status: Active
Supplier Device Package: PG-TSOP6-6
Vgs(th) (Max) @ Id: 2V @ 3.7µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 5V
Rds On (Max) @ Id, Vgs: 160mOhm @ 1.4A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 94pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 1.4A, 1.5A
Drain to Source Voltage (Vdss): 30V
Power - Max: 500mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Bulk
товару немає в наявності
В кошику
од. на суму грн.
| IPL60R185C7AUMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 13A 4VSON
Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-VSON-4
Vgs(th) (Max) @ Id: 4V @ 260µA
Power Dissipation (Max): 77W (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 5.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-PowerTSFN
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 600V 13A 4VSON
Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-VSON-4
Vgs(th) (Max) @ Id: 4V @ 260µA
Power Dissipation (Max): 77W (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 5.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-PowerTSFN
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| IPD70P04P4L08ATMA2 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET P-CH 40V 70A TO252-3
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 5430 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): +5V, -16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-TO252-3-313
Vgs(th) (Max) @ Id: 2.2V @ 120µA
Power Dissipation (Max): 75W (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 70A, 10V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Description: MOSFET P-CH 40V 70A TO252-3
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 5430 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): +5V, -16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-TO252-3-313
Vgs(th) (Max) @ Id: 2.2V @ 120µA
Power Dissipation (Max): 75W (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 70A, 10V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
на замовлення 10096 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 104.67 грн |
| 10+ | 76.20 грн |
| 100+ | 56.05 грн |
| 500+ | 42.54 грн |
| 1000+ | 39.28 грн |
| IPD70P04P4L08ATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET P-CH 40V 70A TO252-3
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 5430 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-TO252-3-313
Vgs(th) (Max) @ Id: 2.2V @ 120µA
Power Dissipation (Max): 75W (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 70A, 10V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Qualification: AEC-Q101
Grade: Automotive
Description: MOSFET P-CH 40V 70A TO252-3
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 5430 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-TO252-3-313
Vgs(th) (Max) @ Id: 2.2V @ 120µA
Power Dissipation (Max): 75W (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 70A, 10V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Qualification: AEC-Q101
Grade: Automotive
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 40.61 грн |
| IPD70P04P4L08ATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET P-CH 40V 70A TO252-3
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 5430 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-TO252-3-313
Vgs(th) (Max) @ Id: 2.2V @ 120µA
Power Dissipation (Max): 75W (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 70A, 10V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Qualification: AEC-Q101
Grade: Automotive
Description: MOSFET P-CH 40V 70A TO252-3
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 5430 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-TO252-3-313
Vgs(th) (Max) @ Id: 2.2V @ 120µA
Power Dissipation (Max): 75W (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 70A, 10V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Qualification: AEC-Q101
Grade: Automotive
на замовлення 4998 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 144.31 грн |
| 10+ | 88.42 грн |
| 100+ | 59.66 грн |
| 500+ | 44.44 грн |
| 1000+ | 40.72 грн |
| FD300R17KE4PHOSA1 |
![]() |
Виробник: Infineon Technologies
Description: IGBT MODULE 1700V 300A AG62MM-1
Current - Collector Cutoff (Max): 1 mA
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector (Ic) (Max): 300 A
Part Status: Active
IGBT Type: Trench Field Stop
Supplier Device Package: AG-62MM-1
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 300A
Operating Temperature: -40°C ~ 150°C
Configuration: Single Chopper
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Description: IGBT MODULE 1700V 300A AG62MM-1
Current - Collector Cutoff (Max): 1 mA
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector (Ic) (Max): 300 A
Part Status: Active
IGBT Type: Trench Field Stop
Supplier Device Package: AG-62MM-1
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 300A
Operating Temperature: -40°C ~ 150°C
Configuration: Single Chopper
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
товару немає в наявності
В кошику
од. на суму грн.
| F3L200R07W2S5B11BOMA1 |
на замовлення 150 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 4773.59 грн |
| F3L200R07W2S5B11BOMA1 |
на замовлення 15 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 5412.53 грн |
| 15+ | 4723.69 грн |
| BTS133TCAUMA1 |
Виробник: Infineon Technologies
Description: IC PWR SWITCH
Part Status: Not For New Designs
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, Short Circuit
Supplier Device Package: PG-TO263-3-2
Ratio - Input:Output: 1:1
Current - Output (Max): 7A
Voltage - Load: 60V
Input Type: Non-Inverting
Rds On (Typ): 40mOhm
Output Configuration: Low Side
Operating Temperature: -40°C ~ 150°C (TJ)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Features: Auto Restart, Slew Rate Controlled
Packaging: Tape & Reel (TR)
Voltage - Supply (Vcc/Vdd): Not Required
Description: IC PWR SWITCH
Part Status: Not For New Designs
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, Short Circuit
Supplier Device Package: PG-TO263-3-2
Ratio - Input:Output: 1:1
Current - Output (Max): 7A
Voltage - Load: 60V
Input Type: Non-Inverting
Rds On (Typ): 40mOhm
Output Configuration: Low Side
Operating Temperature: -40°C ~ 150°C (TJ)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Features: Auto Restart, Slew Rate Controlled
Packaging: Tape & Reel (TR)
Voltage - Supply (Vcc/Vdd): Not Required
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| BTS500701TMAATMA1 |
![]() |
Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 TO220-7
Features: Auto Restart
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 7mOhm
Input Type: Non-Inverting
Voltage - Load: 5.5V ~ 30V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 12A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO220-7-4
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Description: IC PWR SWITCH N-CHAN 1:1 TO220-7
Features: Auto Restart
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 7mOhm
Input Type: Non-Inverting
Voltage - Load: 5.5V ~ 30V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 12A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO220-7-4
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| BTS500701TMBAKSA1 |
![]() |
Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 TO220-7
Features: Auto Restart
Packaging: Tube
Package / Case: TO-220-7
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 7mOhm
Input Type: Non-Inverting
Voltage - Load: 5.5V ~ 30V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 12A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO220-7-12
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Description: IC PWR SWITCH N-CHAN 1:1 TO220-7
Features: Auto Restart
Packaging: Tube
Package / Case: TO-220-7
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 7mOhm
Input Type: Non-Inverting
Voltage - Load: 5.5V ~ 30V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 12A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO220-7-12
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
товару немає в наявності
Мінімальне замовлення: 500 шт
В кошику
од. на суму грн.
| BCR 196T E6327 |
![]() |
Виробник: Infineon Technologies
Description: TRANS PREBIAS PNP 50V 0.07A SC75
Resistors Included: R1 and R2
Resistor - Emitter Base (R2): 22 kOhms
Resistor - Base (R1): 47 kOhms
Frequency - Transition: 150 MHz
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 70 mA
Supplier Device Package: PG-SC75-3D
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Tape & Reel (TR)
Description: TRANS PREBIAS PNP 50V 0.07A SC75
Resistors Included: R1 and R2
Resistor - Emitter Base (R2): 22 kOhms
Resistor - Base (R1): 47 kOhms
Frequency - Transition: 150 MHz
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 70 mA
Supplier Device Package: PG-SC75-3D
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 15000 шт
В кошику
од. на суму грн.
| BCR 196F E6327 |
![]() |
Виробник: Infineon Technologies
Description: TRANS PREBIAS PNP 50V TSFP-3
Resistors Included: R1 and R2
Resistor - Emitter Base (R2): 22 kOhms
Resistor - Base (R1): 47 kOhms
Frequency - Transition: 150 MHz
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 70 mA
Supplier Device Package: PG-TSFP-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Tape & Reel (TR)
Description: TRANS PREBIAS PNP 50V TSFP-3
Resistors Included: R1 and R2
Resistor - Emitter Base (R2): 22 kOhms
Resistor - Base (R1): 47 kOhms
Frequency - Transition: 150 MHz
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 70 mA
Supplier Device Package: PG-TSFP-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 39000 шт
В кошику
од. на суму грн.
| BCR 196L3 E6327 |
![]() |
Виробник: Infineon Technologies
Description: TRANS PREBIAS PNP 50V TSLP-3
Resistors Included: R1 and R2
Resistor - Emitter Base (R2): 22 kOhms
Resistor - Base (R1): 47 kOhms
Frequency - Transition: 150 MHz
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 70 mA
Supplier Device Package: PG-TSLP-3-4
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Packaging: Tape & Reel (TR)
Description: TRANS PREBIAS PNP 50V TSLP-3
Resistors Included: R1 and R2
Resistor - Emitter Base (R2): 22 kOhms
Resistor - Base (R1): 47 kOhms
Frequency - Transition: 150 MHz
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 70 mA
Supplier Device Package: PG-TSLP-3-4
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 30000 шт
В кошику
од. на суму грн.
| EVALM13645ATOBO2 |
![]() |
Виробник: Infineon Technologies
Description: EVAL BOARD FOR IRSM836-045MA
Packaging: Bulk
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: IRSM836-045MA
Supplied Contents: Board(s)
Primary Attributes: 165VAC ~ 265VAC
Secondary Attributes: On-Board LEDs, Test Points
Embedded: No
Part Status: Active
Description: EVAL BOARD FOR IRSM836-045MA
Packaging: Bulk
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: IRSM836-045MA
Supplied Contents: Board(s)
Primary Attributes: 165VAC ~ 265VAC
Secondary Attributes: On-Board LEDs, Test Points
Embedded: No
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
| BSM100GB120DN2K |
![]() |
Виробник: Infineon Technologies
Description: INSULATED GATE BIPOLAR TRANSISTO
Description: INSULATED GATE BIPOLAR TRANSISTO
товару немає в наявності
В кошику
од. на суму грн.
| IDC05S60CEX1SA1 |
![]() |
Виробник: Infineon Technologies
Description: DIODE SIC 600V 5A SAWN WAFER
Description: DIODE SIC 600V 5A SAWN WAFER
товару немає в наявності
В кошику
од. на суму грн.
| SIDC07D60F6X1SA2 |
![]() |
Виробник: Infineon Technologies
Description: DIODE GP 600V 22.5A WAFER
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 22.5 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: Sawn on foil
Current - Average Rectified (Io): 22.5A
Technology: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Description: DIODE GP 600V 22.5A WAFER
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 22.5 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: Sawn on foil
Current - Average Rectified (Io): 22.5A
Technology: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
товару немає в наявності
В кошику
од. на суму грн.
| SIDC03D60F6X1SA2 |
![]() |
Виробник: Infineon Technologies
Description: DIODE GP 600V 6A WAFER
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 6 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: Sawn on foil
Current - Average Rectified (Io): 6A
Technology: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Description: DIODE GP 600V 6A WAFER
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 6 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: Sawn on foil
Current - Average Rectified (Io): 6A
Technology: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
товару немає в наявності
В кошику
од. на суму грн.
| SIDC02D60C6X1SA4 |
![]() |
Виробник: Infineon Technologies
Description: DIODE GP 600V 6A WAFER
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 6 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: Sawn on foil
Current - Average Rectified (Io): 6A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Description: DIODE GP 600V 6A WAFER
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 6 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: Sawn on foil
Current - Average Rectified (Io): 6A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
товару немає в наявності
В кошику
од. на суму грн.
| SIDC03D120H6X1SA3 |
![]() |
Виробник: Infineon Technologies
Description: DIODE GP 1.2KV 3A WAFER
Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sawn on foil
Current - Average Rectified (Io): 3A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Description: DIODE GP 1.2KV 3A WAFER
Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sawn on foil
Current - Average Rectified (Io): 3A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
товару немає в наявності
В кошику
од. на суму грн.
| SIDC03D60C6X1SA2 |
![]() |
Виробник: Infineon Technologies
Description: DIODE GP 600V 10A WAFER
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: Sawn on foil
Current - Average Rectified (Io): 10A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Description: DIODE GP 600V 10A WAFER
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: Sawn on foil
Current - Average Rectified (Io): 10A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
товару немає в наявності
В кошику
од. на суму грн.
| SIDC05D60C6X1SA2 |
![]() |
Виробник: Infineon Technologies
Description: DIODE GP 600V 15A WAFER
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 15 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: Sawn on foil
Current - Average Rectified (Io): 15A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Description: DIODE GP 600V 15A WAFER
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 15 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: Sawn on foil
Current - Average Rectified (Io): 15A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
товару немає в наявності
В кошику
од. на суму грн.
| SIDC02D60F6X1SA1 |
![]() |
Виробник: Infineon Technologies
Description: DIODE GP 600V 3A WAFER
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: Sawn on foil
Current - Average Rectified (Io): 3A
Technology: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Description: DIODE GP 600V 3A WAFER
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: Sawn on foil
Current - Average Rectified (Io): 3A
Technology: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
товару немає в наявності
В кошику
од. на суму грн.
| SIDC02D60C8F1SA1 |
Виробник: Infineon Technologies
Description: DIODE SWITCHING 600V 6A WAFER
Description: DIODE SWITCHING 600V 6A WAFER
товару немає в наявності
В кошику
од. на суму грн.
| SIDC07D60F6X7SA1 |
Виробник: Infineon Technologies
Description: DIODE SWITCHING 600V WAFER
Description: DIODE SWITCHING 600V WAFER
товару немає в наявності
В кошику
од. на суму грн.
| SIDC07D60F6X1SA5 |
![]() |
Виробник: Infineon Technologies
Description: DIODE SWITCHING 600V WAFER
Description: DIODE SWITCHING 600V WAFER
товару немає в наявності
В кошику
од. на суму грн.
| SIDC03D120F6X1SA1 |
![]() |
Виробник: Infineon Technologies
Description: DIODE GP 1.2KV 2A WAFER
Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sawn on foil
Current - Average Rectified (Io): 2A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Description: DIODE GP 1.2KV 2A WAFER
Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sawn on foil
Current - Average Rectified (Io): 2A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
товару немає в наявності
В кошику
од. на суму грн.
| SIDC07D60E6X1SA1 |
![]() |
Виробник: Infineon Technologies
Description: DIODE GP 600V 15A WAFER
Current - Reverse Leakage @ Vr: 250 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 15 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sawn on foil
Current - Average Rectified (Io): 15A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Description: DIODE GP 600V 15A WAFER
Current - Reverse Leakage @ Vr: 250 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 15 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sawn on foil
Current - Average Rectified (Io): 15A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
товару немає в наявності
В кошику
од. на суму грн.
| SIDC03D60C8X7SA2 |
Виробник: Infineon Technologies
Description: DIODE SWITCHING 600V 10A WAFER
Description: DIODE SWITCHING 600V 10A WAFER
товару немає в наявності
В кошику
од. на суму грн.
| BCR166E6393HTSA1 |
![]() |
на замовлення 182000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8955+ | 2.05 грн |
| MB96F646RBPMC-GS-107JAE2 |
Виробник: Infineon Technologies
Description: IC MCU 16BIT 288KB FLASH 100LQFP
Description: IC MCU 16BIT 288KB FLASH 100LQFP
товару немає в наявності
В кошику
од. на суму грн.
| BTT3050EJXUMA1 |
![]() |
Виробник: Infineon Technologies
Description: 50 M SINGLE CHANNEL SMART LOW-SI
Packaging: Tape & Reel (TR)
Features: Slew Rate Controlled
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 50mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 36V
Voltage - Supply (Vcc/Vdd): 3.3V ~ 5.5V
Current - Output (Max): 4A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TDSO-8-31
Fault Protection: Current Limiting (Fixed), Over Load, Over Temperature, Over Voltage, Short Circuit
Part Status: Active
Description: 50 M SINGLE CHANNEL SMART LOW-SI
Packaging: Tape & Reel (TR)
Features: Slew Rate Controlled
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 50mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 36V
Voltage - Supply (Vcc/Vdd): 3.3V ~ 5.5V
Current - Output (Max): 4A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TDSO-8-31
Fault Protection: Current Limiting (Fixed), Over Load, Over Temperature, Over Voltage, Short Circuit
Part Status: Active
на замовлення 45000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 62.01 грн |
| 6000+ | 56.19 грн |
| BTT3050EJXUMA1 |
![]() |
Виробник: Infineon Technologies
Description: 50 M SINGLE CHANNEL SMART LOW-SI
Packaging: Cut Tape (CT)
Features: Slew Rate Controlled
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 50mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 36V
Voltage - Supply (Vcc/Vdd): 3.3V ~ 5.5V
Current - Output (Max): 4A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TDSO-8-31
Fault Protection: Current Limiting (Fixed), Over Load, Over Temperature, Over Voltage, Short Circuit
Part Status: Active
Description: 50 M SINGLE CHANNEL SMART LOW-SI
Packaging: Cut Tape (CT)
Features: Slew Rate Controlled
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 50mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 36V
Voltage - Supply (Vcc/Vdd): 3.3V ~ 5.5V
Current - Output (Max): 4A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TDSO-8-31
Fault Protection: Current Limiting (Fixed), Over Load, Over Temperature, Over Voltage, Short Circuit
Part Status: Active
на замовлення 46593 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 209.33 грн |
| 10+ | 130.26 грн |
| 100+ | 89.71 грн |
| 500+ | 67.91 грн |
| 1000+ | 64.55 грн |
| BTS129E3045ANTMA1 |
![]() |
Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 17A, 10V
Power Dissipation (Max): 75W
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: PG-TO220-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 25 V
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 17A, 10V
Power Dissipation (Max): 75W
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: PG-TO220-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 25 V
на замовлення 2997 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 62+ | 335.69 грн |





























