Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (149495) > Сторінка 459 з 2492
| Фото | Назва | Виробник | Інформація |
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IPB80P04P407ATMA2 | Infineon Technologies |
Description: MOSFET_(20V 40V) PG-TO263-3Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 7.4mOhm @ 80A, 10V Power Dissipation (Max): 88W (Tc) Vgs(th) (Max) @ Id: 4V @ 150µA Supplier Device Package: PG-TO263-3-2 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6085 pF @ 25 V |
на замовлення 1879 шт: термін постачання 21-31 дні (днів) |
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FP25R12KS4CBOSA1 | Infineon Technologies |
Description: IGBT MOD 1200V 40A 230W MODPackaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -40°C ~ 125°C Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 25A NTC Thermistor: Yes Supplier Device Package: Module Part Status: Last Time Buy Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 230 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 1.5 nF @ 25 V |
на замовлення 11 шт: термін постачання 21-31 дні (днів) |
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| TLE4290G | Infineon Technologies |
Description: IC REG LINEAR FIXED LDO REGPackaging: Bulk Package / Case: TO-263-6, D²Pak (5 Leads + Tab), TO-263BA Output Type: Fixed Mounting Type: Surface Mount Current - Output: 450mA Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 230 µA Voltage - Input (Max): 42V Number of Regulators: 1 Supplier Device Package: PG-TO263-5-1 Voltage - Output (Min/Fixed): 5V Control Features: Delay, Power Good Part Status: Active PSRR: 60dB (100Hz) Voltage Dropout (Max): 0.5V @ 300mA Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit Current - Supply (Max): 25 mA |
на замовлення 137785 шт: термін постачання 21-31 дні (днів) |
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2EDN7534FXTMA1 | Infineon Technologies |
Description: IC GATE DRVR LOW-SIDE 8SOICPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 4.5V ~ 20V Input Type: Non-Inverting Supplier Device Package: PG-DSO-8 Rise / Fall Time (Typ): 8.6ns, 6ns Channel Type: Independent Driven Configuration: Low-Side Number of Drivers: 2 Gate Type: N-Channel, P-Channel MOSFET Logic Voltage - VIL, VIH: 1.4V, 1.9V Current - Peak Output (Source, Sink): 5A, 5A Part Status: Active DigiKey Programmable: Not Verified |
товару немає в наявності |
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2EDN7534FXTMA1 | Infineon Technologies |
Description: IC GATE DRVR LOW-SIDE 8SOICPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 4.5V ~ 20V Input Type: Non-Inverting Supplier Device Package: PG-DSO-8 Rise / Fall Time (Typ): 8.6ns, 6ns Channel Type: Independent Driven Configuration: Low-Side Number of Drivers: 2 Gate Type: N-Channel, P-Channel MOSFET Logic Voltage - VIL, VIH: 1.4V, 1.9V Current - Peak Output (Source, Sink): 5A, 5A Part Status: Active DigiKey Programmable: Not Verified |
на замовлення 1495 шт: термін постачання 21-31 дні (днів) |
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| FD1000R33HE3KBOSA1 | Infineon Technologies |
Description: IGBT MODULE 3300V 1000APackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Dual Brake Chopper Operating Temperature: -40°C ~ 150°C Vce(on) (Max) @ Vge, Ic: 3.15V @ 15V, 1kA NTC Thermistor: No IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 1000 A Voltage - Collector Emitter Breakdown (Max): 3300 V Power - Max: 11500 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 190 nF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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FS500R17OE4DPBOSA1 | Infineon Technologies |
Description: IGBT MODULE 1700V 1000A MODULEPackaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Full Bridge Operating Temperature: -40°C ~ 150°C Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 500A NTC Thermistor: Yes Supplier Device Package: Module IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 1000 A Voltage - Collector Emitter Breakdown (Max): 1700 V Power - Max: 20 mW Current - Collector Cutoff (Max): 3 mA Input Capacitance (Cies) @ Vce: 40 nF @ 25 V |
на замовлення 562 шт: термін постачання 21-31 дні (днів) |
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FS500R17OE4DPBOSA1 | Infineon Technologies |
Description: IGBT MODULE 1700V 1000A MODULEPackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Full Bridge Operating Temperature: -40°C ~ 150°C Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 500A NTC Thermistor: Yes Supplier Device Package: Module IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 1000 A Voltage - Collector Emitter Breakdown (Max): 1700 V Power - Max: 20 mW Current - Collector Cutoff (Max): 3 mA Input Capacitance (Cies) @ Vce: 40 nF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| TDA5225HTXUMA1 | Infineon Technologies |
Description: TDA5225HTXU - RF RECEIVERPackaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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TDA5221XUMA1 | Infineon Technologies |
Description: RF RX ASK/FSK 300-340MHZ 28TSSOPPackaging: Bulk Package / Case: 28-TSSOP (0.173", 4.40mm Width) Sensitivity: -113dBm Mounting Type: Surface Mount Frequency: 300MHz ~ 340MHz Modulation or Protocol: ASK, FSK Data Interface: PCB, Surface Mount Operating Temperature: -40°C ~ 105°C Voltage - Supply: 4.5V ~ 5.5V Applications: RKE, Remote Control Systems Current - Receiving: 6.2mA Data Rate (Max): 100kbps Antenna Connector: PCB, Surface Mount Supplier Device Package: PG-TSSOP-28 Part Status: Obsolete |
на замовлення 34147 шт: термін постачання 21-31 дні (днів) |
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TLE42672GATMA2CT | Infineon Technologies |
Description: IC REG LIN 5V 400MA PG-TO263-7-1Packaging: Bulk Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Output Type: Fixed Mounting Type: Surface Mount Current - Output: 400mA Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 4 mA Voltage - Input (Max): 40V Number of Regulators: 1 Supplier Device Package: PG-TO263-7-1 Voltage - Output (Min/Fixed): 5V Control Features: Inhibit, Reset PSRR: 54dB (100Hz) Voltage Dropout (Max): 0.6V @ 400mA Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit, Transient Voltage Current - Supply (Max): 80 mA Grade: Automotive Qualification: AEC-Q100 |
на замовлення 335 шт: термін постачання 21-31 дні (днів) |
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CY95F108AKSPFV-GSE1 | Infineon Technologies | Description: IC MCU 8BIT 60KB FLASH 64LQFP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BTS133AKSA1 | Infineon Technologies |
Description: IC PWR SWITCH Packaging: Tube Features: Slew Rate Controlled Package / Case: TO-220-3 Output Type: N-Channel Mounting Type: Through Hole Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Low Side Rds On (Typ): 40mOhm Input Type: Non-Inverting Voltage - Load: 60V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 7A Ratio - Input:Output: 1:1 Supplier Device Package: PG-TO220-3-1 Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, Short Circuit Part Status: Not For New Designs |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IPD12CN10NG | Infineon Technologies |
Description: OPTLMOS N-CHANNEL POWER MOSFET |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BTS40K21EJCXUMA1 | Infineon Technologies |
Description: IC PWR SWITCH N-CHAN 1:1 DSO-8 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| PEB333HTV2.2 | Infineon Technologies | Description: VINETIC VOICE OVER IP PROCESSOR |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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IPW65R060CFD7XKSA1 | Infineon Technologies |
Description: 650V FET COOLMOS TO247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Rds On (Max) @ Id, Vgs: 60mOhm @ 16.4A, 10V Power Dissipation (Max): 171W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 860µA Supplier Device Package: PG-TO247-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3288 pF @ 400 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IPLK60R600PFD7ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 600V 7A THIN-PAKPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 1.7A, 10V Power Dissipation (Max): 45W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 80µA Supplier Device Package: PG-TDSON-8-52 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 344 pF @ 400 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IAUC41N06S5N102ATMA1 | Infineon Technologies |
Description: MOSFET_)40V 60V) PG-TDSON-8Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 47A (Tj) Rds On (Max) @ Id, Vgs: 10.2mOhm @ 20A, 10V Power Dissipation (Max): 42W (Tc) Vgs(th) (Max) @ Id: 3.4V @ 13µA Supplier Device Package: PG-TDSON-8-33 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 16.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1112.1 pF @ 30 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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IAUC41N06S5N102ATMA1 | Infineon Technologies |
Description: MOSFET_)40V 60V) PG-TDSON-8Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 47A (Tj) Rds On (Max) @ Id, Vgs: 10.2mOhm @ 20A, 10V Power Dissipation (Max): 42W (Tc) Vgs(th) (Max) @ Id: 3.4V @ 13µA Supplier Device Package: PG-TDSON-8-33 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 16.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1112.1 pF @ 30 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 14486 шт: термін постачання 21-31 дні (днів) |
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IM323L6GXKMA1 | Infineon Technologies |
Description: CIPOS TINY 600V 15A THREE-PHASEPackaging: Tube Package / Case: 26-PowerDIP Module (1.043", 26.50mm) Mounting Type: Through Hole Type: IGBT Configuration: 3 Phase Inverter Voltage - Isolation: 2000Vrms Part Status: Active Current: 15 A Voltage: 600 V |
на замовлення 223 шт: термін постачання 21-31 дні (днів) |
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BSC0303LSATMA1 | Infineon Technologies |
Description: TRENCH >=100V PG-TDSON-8Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 68A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 34A, 10V Power Dissipation (Max): 114W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 72µA Supplier Device Package: PG-TDSON-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 120 V Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 60 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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XC2361E136F128LRAAKXQMA1 | Infineon Technologies |
Description: IC MCU 16BIT 100LQFPPackaging: Tape & Reel (TR) Package / Case: 100-LQFP Exposed Pad Mounting Type: Surface Mount Speed: 128MHz Program Memory Size: 1.06MB (1.06M x 8) RAM Size: 98K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: C166SV2 Data Converters: A/D 16x12b Core Size: 16/32-Bit Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V Connectivity: CANbus, EBI/EMI, I²C, LINbus, SPI, SSC, UART/USART, USI Peripherals: I²S, POR, PWM, WDT Supplier Device Package: PG-LQFP-100-8 Part Status: Active Number of I/O: 75 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IDD03SG60CXTMA2 | Infineon Technologies |
Description: DIODE SIL CARB 600V 3A PGTO2523Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 60pF @ 1V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: PG-TO252-3 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 3 A Current - Reverse Leakage @ Vr: 15 µA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BGA825L6SE6327XTSA1 | Infineon Technologies |
Description: IC AMP GPS 1.55-1.615GHZ TSLP6-3Packaging: Tape & Reel (TR) Package / Case: 6-XFDFN Mounting Type: Surface Mount Frequency: 1.55GHz ~ 1.615GHz RF Type: GPS Voltage - Supply: 1.5V ~ 3.6V Gain: 17dB Current - Supply: 4.8mA Noise Figure: 0.6dB P1dB: -10dBm Test Frequency: 1.575GHz Supplier Device Package: TSLP-6-3 Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BGA825L6SE6327XTSA1 | Infineon Technologies |
Description: IC AMP GPS 1.55-1.615GHZ TSLP6-3Packaging: Cut Tape (CT) Package / Case: 6-XFDFN Mounting Type: Surface Mount Frequency: 1.55GHz ~ 1.615GHz RF Type: GPS Voltage - Supply: 1.5V ~ 3.6V Gain: 17dB Current - Supply: 4.8mA Noise Figure: 0.6dB P1dB: -10dBm Test Frequency: 1.575GHz Supplier Device Package: TSLP-6-3 Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BGS15MU14E6327XTSA1 | Infineon Technologies |
Description: IC RF SWITCH SP5T 6GHZ ULGA14-1Packaging: Tape & Reel (TR) Package / Case: 14-UFLGA Exposed Pad Impedance: 50Ohm Mounting Type: Surface Mount Circuit: SP5T RF Type: General Purpose Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 1.95V Insertion Loss: 1.05dB Frequency Range: 400MHz ~ 6GHz Test Frequency: 5.925GHz Isolation: 48dB Supplier Device Package: PG-ULGA-14-1 Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BGS15MU14E6327XTSA1 | Infineon Technologies |
Description: IC RF SWITCH SP5T 6GHZ ULGA14-1Packaging: Cut Tape (CT) Package / Case: 14-UFLGA Exposed Pad Impedance: 50Ohm Mounting Type: Surface Mount Circuit: SP5T RF Type: General Purpose Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 1.95V Insertion Loss: 1.05dB Frequency Range: 400MHz ~ 6GHz Test Frequency: 5.925GHz Isolation: 48dB Supplier Device Package: PG-ULGA-14-1 Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| BGS17GA14E6327XTSA1 | Infineon Technologies |
Description: IC RF SWITCHPackaging: Bulk Part Status: Active |
на замовлення 8800 шт: термін постачання 21-31 дні (днів) |
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| PBL386212QNA | Infineon Technologies |
Description: BIPOLAR SLICPackaging: Bulk Package / Case: 28-LCC (J-Lead) Mounting Type: Surface Mount Function: Subscriber Line Interface Circuit Interface: 2-Wire Operating Temperature: -40°C ~ 85°C Voltage - Supply: 4.75V ~ 5.25V Current - Supply: 2.8mA Supplier Device Package: P/PG-LCC-28-3 Number of Circuits: 1 Power (Watts): 290 mW |
на замовлення 750 шт: термін постачання 21-31 дні (днів) |
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| PBL38621/2QNT-INF | Infineon Technologies |
Description: SLIC, BIPOLAR, PQCC28 Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PBL38621/2QNT | Infineon Technologies |
Description: PBL38621/2 - FLEXISLIC, SUBSCRIBPackaging: Bulk Package / Case: 28-LCC (J-Lead) Mounting Type: Surface Mount Function: Subscriber Line Interface Circuit Interface: 2-Wire Operating Temperature: -40°C ~ 85°C Voltage - Supply: 4.75V ~ 5.25V Current - Supply: 4mA Supplier Device Package: 28-PLCC Number of Circuits: 1 Power (Watts): 1.5 W |
на замовлення 1660 шт: термін постачання 21-31 дні (днів) |
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IDW40G65C5B | Infineon Technologies |
Description: IDW40G65 - COOLSIC SCHOTTKY DIOD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BGT60TR13CE6327XUMA1 | Infineon Technologies |
Description: SENSOR - RADAR SENSOR DIGITALPackaging: Tape & Reel (TR) Package / Case: 119-WFBGA, WLBGA Mounting Type: Surface Mount Frequency: 57GHz ~ 64GHz Type: TxRx Only Operating Temperature: -40°C ~ 125°C (TJ) Voltage - Supply: 3.3V Power - Output: 14.5dBm Protocol: LTE Current - Receiving: 428mA ~ 635mA Data Rate (Max): 100Mbps Current - Transmitting: 550mA Supplier Device Package: PG-WFWLB-119-1 Modulation: GFSK RF Family/Standard: Cellular Serial Interfaces: SPI Part Status: Active DigiKey Programmable: Not Verified Output Type: Digital Sensor Type: Radar Sensor |
на замовлення 4500 шт: термін постачання 21-31 дні (днів) |
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BGT60TR13CE6327XUMA1 | Infineon Technologies |
Description: SENSOR - RADAR SENSOR DIGITALPackaging: Cut Tape (CT) Package / Case: 119-WFBGA, WLBGA Mounting Type: Surface Mount Frequency: 57GHz ~ 64GHz Type: TxRx Only Operating Temperature: -40°C ~ 125°C (TJ) Voltage - Supply: 3.3V Power - Output: 14.5dBm Protocol: LTE Current - Receiving: 428mA ~ 635mA Data Rate (Max): 100Mbps Current - Transmitting: 550mA Supplier Device Package: PG-WFWLB-119-1 Modulation: GFSK RF Family/Standard: Cellular Serial Interfaces: SPI Part Status: Active DigiKey Programmable: Not Verified Output Type: Digital Sensor Type: Radar Sensor |
на замовлення 7818 шт: термін постачання 21-31 дні (днів) |
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TZ500N16KOFHPSA1 | Infineon Technologies |
Description: SCR MODULE 1.6KV 1050A MODULEPackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 125°C Structure: Single Current - Hold (Ih) (Max): 300 mA Current - Gate Trigger (Igt) (Max): 250 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 17A @ 50Hz Number of SCRs, Diodes: 1 SCR Current - On State (It (AV)) (Max): 669 A Voltage - Gate Trigger (Vgt) (Max): 2.2 V Part Status: Active Current - On State (It (RMS)) (Max): 1050 A Voltage - Off State: 1.6 kV |
на замовлення 3 шт: термін постачання 21-31 дні (днів) |
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TZ500N14KOFHPSA1 | Infineon Technologies |
Description: SCR MODULE 1.4KV 1050A MODULEPackaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 125°C Structure: Single Current - Hold (Ih) (Max): 300 mA Current - Gate Trigger (Igt) (Max): 250 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 17A @ 50Hz Number of SCRs, Diodes: 1 SCR Current - On State (It (AV)) (Max): 669 A Voltage - Gate Trigger (Vgt) (Max): 2.2 V Part Status: Obsolete Current - On State (It (RMS)) (Max): 1050 A Voltage - Off State: 1.4 kV |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TZ600N14KOFHPSA1 | Infineon Technologies |
Description: SCR MODULE 1.6KV 1050A MODULE |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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REFFRIDGED111TRC2SLTOBO1 | Infineon Technologies |
Description: EVAL BOARD FOR IMD111T-6F040Packaging: Bulk Function: Motor Controller/Driver Type: Power Management Contents: Board(s), Cable(s) Utilized IC / Part: IMD111T-6F040, IKD04N60RC2 Supplied Contents: Board(s), Cable(s) Primary Attributes: Compressor Embedded: Yes, MCU Part Status: Active |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
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TLV49645TBXALA1 | Infineon Technologies |
Description: MAGNETIC SWITCH UNIPOLAR TO92SFeatures: Temperature Compensated Packaging: Cut Tape (CT) Package / Case: TO-226-3, TO-92-3 Short Body Output Type: Open Drain Polarization: South Pole Mounting Type: Through Hole Function: Unipolar Switch Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 3V ~ 26V Technology: Hall Effect Sensing Range: 10.4mT Trip, 2.8mT Release Current - Output (Max): 25mA Current - Supply (Max): 2.5mA Supplier Device Package: TO-92S Test Condition: 25°C Grade: Automotive Part Status: Active Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TLI49631MXTSA1 | Infineon Technologies |
Description: MAGNETIC SWITCH LATCH SOT23-3Features: Temperature Compensated Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Output Type: Open Drain Polarization: South Pole Mounting Type: Surface Mount Function: Latch Operating Temperature: -40°C ~ 125°C Voltage - Supply: 3V ~ 5.5V Technology: Hall Effect Sensing Range: 3.5mT Trip, -3.5mT Release Current - Output (Max): 5mA Current - Supply (Max): 2.5mA Supplier Device Package: PG-SOT23-3-15 Test Condition: 25°C Grade: Automotive Qualification: AEC-Q100 |
на замовлення 4470 шт: термін постачання 21-31 дні (днів) |
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| BSM400GA170DLS | Infineon Technologies |
Description: IGBT MODULEPackaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 3.3V @ 15V, 400A NTC Thermistor: No Supplier Device Package: Module Part Status: Active Current - Collector (Ic) (Max): 800 A Voltage - Collector Emitter Breakdown (Max): 1700 V Power - Max: 3120 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 27 nF @ 25 V |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
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IPB80P03P4L07ATMA2 | Infineon Technologies |
Description: MOSFET_(20V 40V) PG-TO263-3Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 6.9mOhm @ 80A, 10V Power Dissipation (Max): 88W (Tc) Vgs(th) (Max) @ Id: 2V @ 130µA Supplier Device Package: PG-TO263-3-2 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +5V, -16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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KITIM69D127V11FLEXTOBO1 | Infineon Technologies |
Description: EVAL BOARD FOR IM69D127V11 Packaging: Bulk Function: MEMS Omnidirectional Microphones Type: Audio Utilized IC / Part: IM69D127V11 Supplied Contents: Board(s) Primary Attributes: Digital Output Part Status: Active |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
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IFX2931GV33 | Infineon Technologies |
Description: IC REG LINEAR FIXED POS LDO REGPackaging: Bulk Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: Fixed Mounting Type: Surface Mount Current - Output: 100mA Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 1 mA Voltage - Input (Max): 26V Number of Regulators: 1 Supplier Device Package: PG-DSO-8-1 Voltage - Output (Min/Fixed): 3.3V Control Features: Enable PSRR: 80dB (120Hz) Voltage Dropout (Max): 1.1V @ 100mA Protection Features: Antisaturation, Mirror-Image Insertion, Over Current, Over Temperature, Reverse Polarity Current - Supply (Max): 15 mA |
на замовлення 1648 шт: термін постачання 21-31 дні (днів) |
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IFX8117MEV33 | Infineon Technologies |
Description: IC REG LINEAR FIXED LDO REG |
на замовлення 2950 шт: термін постачання 21-31 дні (днів) |
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| TLE4954CE4807BAMA1 | Infineon Technologies |
Description: SPEED & CURRENT SENSORS |
на замовлення 7500 шт: термін постачання 21-31 дні (днів) |
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BAV 99 E6433 | Infineon Technologies |
Description: DIODE ARRAY GP 80V 200MA SOT23 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| ISP06P008NSATMA1 | Infineon Technologies |
Description: MOSFET P-CH SOT223-3 Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: P-Channel Supplier Device Package: PG-SOT223 Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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IAUC100N04S6L014ATMA1 | Infineon Technologies |
Description: IAUC100N04S6L014ATMA1Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V Power Dissipation (Max): 100W (Tc) Vgs(th) (Max) @ Id: 2V @ 50µA Supplier Device Package: PG-TDSON-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3935 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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IAUC100N04S6L014ATMA1 | Infineon Technologies |
Description: IAUC100N04S6L014ATMA1Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V Power Dissipation (Max): 100W (Tc) Vgs(th) (Max) @ Id: 2V @ 50µA Supplier Device Package: PG-TDSON-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3935 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 8614 шт: термін постачання 21-31 дні (днів) |
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IRFI7446GPBF | Infineon Technologies |
Description: MOSFET N-CH 40V 80A TO220AB FPPackaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 48A, 10V Power Dissipation (Max): 40.5W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 100µA Supplier Device Package: TO-220AB Full-Pak Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3199 pF @ 25 V |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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BSF030NE2LQXUMA1 | Infineon Technologies |
Description: MOSFET N-CH 25V 24A/75A 2WDSON |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BSF030NE2LQXUMA1 | Infineon Technologies |
Description: MOSFET N-CH 25V 24A/75A 2WDSON |
на замовлення 4785 шт: термін постачання 21-31 дні (днів) |
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TLF4949EJ | Infineon Technologies |
Description: IC REG LINEAR VOLT TLF4949 |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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| BSF083N03LQG | Infineon Technologies |
Description: N-CHANNEL POWER MOSFETPackaging: Bulk Package / Case: 3-WDSON Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 53A (Tc) Rds On (Max) @ Id, Vgs: 8.3mOhm @ 20A, 10V Power Dissipation (Max): 2.2W (Ta), 36W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: MG-WDSON-2, CanPAK M™ Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 15 V |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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BSC205N10LSG | Infineon Technologies |
Description: N-CHANNEL POWER MOSFET |
на замовлення 5751 шт: термін постачання 21-31 дні (днів) |
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BSC029N025SG | Infineon Technologies |
Description: N-CHANNEL POWER MOSFETPackaging: Bulk Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 2.9mOhm @ 50A, 10V Power Dissipation (Max): 2.8W (Ta), 78W (Tc) Vgs(th) (Max) @ Id: 2V @ 80µA Supplier Device Package: PG-TDSON-8-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 5090 pF @ 15 V |
на замовлення 8868 шт: термін постачання 21-31 дні (днів) |
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BSC886N03LSGATMA1 | Infineon Technologies |
Description: MOSFET N-CH 30V 13A/65A TDSON |
на замовлення 8585 шт: термін постачання 21-31 дні (днів) |
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BAS70E6327 | Infineon Technologies |
Description: BAS70 - HIGH SPEED SWITCHING, CLPackaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 100 ps Technology: Schottky Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz Current - Average Rectified (Io): 70mA Supplier Device Package: PG-SOT23 Operating Temperature - Junction: 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 70 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA Current - Reverse Leakage @ Vr: 100 nA @ 50 V |
на замовлення 107857 шт: термін постачання 21-31 дні (днів) |
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| IPB80P04P407ATMA2 |
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Виробник: Infineon Technologies
Description: MOSFET_(20V 40V) PG-TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 80A, 10V
Power Dissipation (Max): 88W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6085 pF @ 25 V
Description: MOSFET_(20V 40V) PG-TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 80A, 10V
Power Dissipation (Max): 88W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6085 pF @ 25 V
на замовлення 1879 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 246.96 грн |
| 10+ | 154.83 грн |
| 100+ | 107.49 грн |
| 500+ | 81.84 грн |
| FP25R12KS4CBOSA1 |
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Виробник: Infineon Technologies
Description: IGBT MOD 1200V 40A 230W MOD
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 25A
NTC Thermistor: Yes
Supplier Device Package: Module
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 230 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 1.5 nF @ 25 V
Description: IGBT MOD 1200V 40A 230W MOD
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 25A
NTC Thermistor: Yes
Supplier Device Package: Module
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 230 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 1.5 nF @ 25 V
на замовлення 11 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 8518.83 грн |
| TLE4290G |
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Виробник: Infineon Technologies
Description: IC REG LINEAR FIXED LDO REG
Packaging: Bulk
Package / Case: TO-263-6, D²Pak (5 Leads + Tab), TO-263BA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 450mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 230 µA
Voltage - Input (Max): 42V
Number of Regulators: 1
Supplier Device Package: PG-TO263-5-1
Voltage - Output (Min/Fixed): 5V
Control Features: Delay, Power Good
Part Status: Active
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.5V @ 300mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 25 mA
Description: IC REG LINEAR FIXED LDO REG
Packaging: Bulk
Package / Case: TO-263-6, D²Pak (5 Leads + Tab), TO-263BA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 450mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 230 µA
Voltage - Input (Max): 42V
Number of Regulators: 1
Supplier Device Package: PG-TO263-5-1
Voltage - Output (Min/Fixed): 5V
Control Features: Delay, Power Good
Part Status: Active
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.5V @ 300mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 25 mA
на замовлення 137785 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 217+ | 118.37 грн |
| 2EDN7534FXTMA1 |
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Виробник: Infineon Technologies
Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: PG-DSO-8
Rise / Fall Time (Typ): 8.6ns, 6ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 1.4V, 1.9V
Current - Peak Output (Source, Sink): 5A, 5A
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: PG-DSO-8
Rise / Fall Time (Typ): 8.6ns, 6ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 1.4V, 1.9V
Current - Peak Output (Source, Sink): 5A, 5A
Part Status: Active
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
| 2EDN7534FXTMA1 |
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Виробник: Infineon Technologies
Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: PG-DSO-8
Rise / Fall Time (Typ): 8.6ns, 6ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 1.4V, 1.9V
Current - Peak Output (Source, Sink): 5A, 5A
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: PG-DSO-8
Rise / Fall Time (Typ): 8.6ns, 6ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 1.4V, 1.9V
Current - Peak Output (Source, Sink): 5A, 5A
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 1495 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 50.24 грн |
| 10+ | 34.03 грн |
| 25+ | 30.54 грн |
| 100+ | 25.03 грн |
| 250+ | 23.30 грн |
| 500+ | 22.25 грн |
| 1000+ | 21.04 грн |
| FD1000R33HE3KBOSA1 |
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Виробник: Infineon Technologies
Description: IGBT MODULE 3300V 1000A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Dual Brake Chopper
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 3.15V @ 15V, 1kA
NTC Thermistor: No
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 1000 A
Voltage - Collector Emitter Breakdown (Max): 3300 V
Power - Max: 11500 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 190 nF @ 25 V
Description: IGBT MODULE 3300V 1000A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Dual Brake Chopper
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 3.15V @ 15V, 1kA
NTC Thermistor: No
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 1000 A
Voltage - Collector Emitter Breakdown (Max): 3300 V
Power - Max: 11500 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 190 nF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| FS500R17OE4DPBOSA1 |
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Виробник: Infineon Technologies
Description: IGBT MODULE 1700V 1000A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 500A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 1000 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 40 nF @ 25 V
Description: IGBT MODULE 1700V 1000A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 500A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 1000 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 40 nF @ 25 V
на замовлення 562 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 56561.49 грн |
| FS500R17OE4DPBOSA1 |
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Виробник: Infineon Technologies
Description: IGBT MODULE 1700V 1000A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 500A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 1000 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 40 nF @ 25 V
Description: IGBT MODULE 1700V 1000A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 500A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 1000 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 40 nF @ 25 V
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| TDA5221XUMA1 |
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Виробник: Infineon Technologies
Description: RF RX ASK/FSK 300-340MHZ 28TSSOP
Packaging: Bulk
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Sensitivity: -113dBm
Mounting Type: Surface Mount
Frequency: 300MHz ~ 340MHz
Modulation or Protocol: ASK, FSK
Data Interface: PCB, Surface Mount
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 4.5V ~ 5.5V
Applications: RKE, Remote Control Systems
Current - Receiving: 6.2mA
Data Rate (Max): 100kbps
Antenna Connector: PCB, Surface Mount
Supplier Device Package: PG-TSSOP-28
Part Status: Obsolete
Description: RF RX ASK/FSK 300-340MHZ 28TSSOP
Packaging: Bulk
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Sensitivity: -113dBm
Mounting Type: Surface Mount
Frequency: 300MHz ~ 340MHz
Modulation or Protocol: ASK, FSK
Data Interface: PCB, Surface Mount
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 4.5V ~ 5.5V
Applications: RKE, Remote Control Systems
Current - Receiving: 6.2mA
Data Rate (Max): 100kbps
Antenna Connector: PCB, Surface Mount
Supplier Device Package: PG-TSSOP-28
Part Status: Obsolete
на замовлення 34147 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 184+ | 119.07 грн |
| TLE42672GATMA2CT |
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Виробник: Infineon Technologies
Description: IC REG LIN 5V 400MA PG-TO263-7-1
Packaging: Bulk
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 4 mA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO263-7-1
Voltage - Output (Min/Fixed): 5V
Control Features: Inhibit, Reset
PSRR: 54dB (100Hz)
Voltage Dropout (Max): 0.6V @ 400mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit, Transient Voltage
Current - Supply (Max): 80 mA
Grade: Automotive
Qualification: AEC-Q100
Description: IC REG LIN 5V 400MA PG-TO263-7-1
Packaging: Bulk
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 4 mA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO263-7-1
Voltage - Output (Min/Fixed): 5V
Control Features: Inhibit, Reset
PSRR: 54dB (100Hz)
Voltage Dropout (Max): 0.6V @ 400mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit, Transient Voltage
Current - Supply (Max): 80 mA
Grade: Automotive
Qualification: AEC-Q100
на замовлення 335 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 213+ | 103.18 грн |
| CY95F108AKSPFV-GSE1 |
Виробник: Infineon Technologies
Description: IC MCU 8BIT 60KB FLASH 64LQFP
Description: IC MCU 8BIT 60KB FLASH 64LQFP
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| BTS133AKSA1 |
Виробник: Infineon Technologies
Description: IC PWR SWITCH
Packaging: Tube
Features: Slew Rate Controlled
Package / Case: TO-220-3
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 40mOhm
Input Type: Non-Inverting
Voltage - Load: 60V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 7A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO220-3-1
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, Short Circuit
Part Status: Not For New Designs
Description: IC PWR SWITCH
Packaging: Tube
Features: Slew Rate Controlled
Package / Case: TO-220-3
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 40mOhm
Input Type: Non-Inverting
Voltage - Load: 60V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 7A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO220-3-1
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, Short Circuit
Part Status: Not For New Designs
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| IPD12CN10NG |
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Виробник: Infineon Technologies
Description: OPTLMOS N-CHANNEL POWER MOSFET
Description: OPTLMOS N-CHANNEL POWER MOSFET
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| BTS40K21EJCXUMA1 |
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Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 DSO-8
Description: IC PWR SWITCH N-CHAN 1:1 DSO-8
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| PEB333HTV2.2 |
Виробник: Infineon Technologies
Description: VINETIC VOICE OVER IP PROCESSOR
Description: VINETIC VOICE OVER IP PROCESSOR
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 30+ | 809.44 грн |
| IPW65R060CFD7XKSA1 |
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Виробник: Infineon Technologies
Description: 650V FET COOLMOS TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 16.4A, 10V
Power Dissipation (Max): 171W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 860µA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3288 pF @ 400 V
Description: 650V FET COOLMOS TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 16.4A, 10V
Power Dissipation (Max): 171W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 860µA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3288 pF @ 400 V
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| IPLK60R600PFD7ATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 7A THIN-PAK
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 1.7A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 80µA
Supplier Device Package: PG-TDSON-8-52
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 344 pF @ 400 V
Description: MOSFET N-CH 600V 7A THIN-PAK
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 1.7A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 80µA
Supplier Device Package: PG-TDSON-8-52
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 344 pF @ 400 V
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| IAUC41N06S5N102ATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET_)40V 60V) PG-TDSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tj)
Rds On (Max) @ Id, Vgs: 10.2mOhm @ 20A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 13µA
Supplier Device Package: PG-TDSON-8-33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 16.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1112.1 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET_)40V 60V) PG-TDSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tj)
Rds On (Max) @ Id, Vgs: 10.2mOhm @ 20A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 13µA
Supplier Device Package: PG-TDSON-8-33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 16.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1112.1 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5000+ | 24.94 грн |
| 10000+ | 22.71 грн |
| IAUC41N06S5N102ATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET_)40V 60V) PG-TDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tj)
Rds On (Max) @ Id, Vgs: 10.2mOhm @ 20A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 13µA
Supplier Device Package: PG-TDSON-8-33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 16.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1112.1 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET_)40V 60V) PG-TDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tj)
Rds On (Max) @ Id, Vgs: 10.2mOhm @ 20A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 13µA
Supplier Device Package: PG-TDSON-8-33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 16.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1112.1 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 14486 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 103.04 грн |
| 10+ | 62.24 грн |
| 100+ | 41.13 грн |
| 500+ | 30.08 грн |
| 1000+ | 27.34 грн |
| 2000+ | 25.03 грн |
| IM323L6GXKMA1 |
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Виробник: Infineon Technologies
Description: CIPOS TINY 600V 15A THREE-PHASE
Packaging: Tube
Package / Case: 26-PowerDIP Module (1.043", 26.50mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 2000Vrms
Part Status: Active
Current: 15 A
Voltage: 600 V
Description: CIPOS TINY 600V 15A THREE-PHASE
Packaging: Tube
Package / Case: 26-PowerDIP Module (1.043", 26.50mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 2000Vrms
Part Status: Active
Current: 15 A
Voltage: 600 V
на замовлення 223 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 599.53 грн |
| 15+ | 530.52 грн |
| 30+ | 508.49 грн |
| 105+ | 454.13 грн |
| BSC0303LSATMA1 |
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Виробник: Infineon Technologies
Description: TRENCH >=100V PG-TDSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 34A, 10V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 72µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 60 V
Description: TRENCH >=100V PG-TDSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 34A, 10V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 72µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 60 V
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| XC2361E136F128LRAAKXQMA1 |
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Виробник: Infineon Technologies
Description: IC MCU 16BIT 100LQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 128MHz
Program Memory Size: 1.06MB (1.06M x 8)
RAM Size: 98K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 16x12b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I²C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I²S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-8
Part Status: Active
Number of I/O: 75
Description: IC MCU 16BIT 100LQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 128MHz
Program Memory Size: 1.06MB (1.06M x 8)
RAM Size: 98K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 16x12b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I²C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I²S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-8
Part Status: Active
Number of I/O: 75
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| IDD03SG60CXTMA2 |
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Виробник: Infineon Technologies
Description: DIODE SIL CARB 600V 3A PGTO2523
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 60pF @ 1V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: PG-TO252-3
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 3 A
Current - Reverse Leakage @ Vr: 15 µA @ 600 V
Description: DIODE SIL CARB 600V 3A PGTO2523
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 60pF @ 1V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: PG-TO252-3
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 3 A
Current - Reverse Leakage @ Vr: 15 µA @ 600 V
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| BGA825L6SE6327XTSA1 |
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Виробник: Infineon Technologies
Description: IC AMP GPS 1.55-1.615GHZ TSLP6-3
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Frequency: 1.55GHz ~ 1.615GHz
RF Type: GPS
Voltage - Supply: 1.5V ~ 3.6V
Gain: 17dB
Current - Supply: 4.8mA
Noise Figure: 0.6dB
P1dB: -10dBm
Test Frequency: 1.575GHz
Supplier Device Package: TSLP-6-3
Part Status: Obsolete
Description: IC AMP GPS 1.55-1.615GHZ TSLP6-3
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Frequency: 1.55GHz ~ 1.615GHz
RF Type: GPS
Voltage - Supply: 1.5V ~ 3.6V
Gain: 17dB
Current - Supply: 4.8mA
Noise Figure: 0.6dB
P1dB: -10dBm
Test Frequency: 1.575GHz
Supplier Device Package: TSLP-6-3
Part Status: Obsolete
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| BGA825L6SE6327XTSA1 |
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Виробник: Infineon Technologies
Description: IC AMP GPS 1.55-1.615GHZ TSLP6-3
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Frequency: 1.55GHz ~ 1.615GHz
RF Type: GPS
Voltage - Supply: 1.5V ~ 3.6V
Gain: 17dB
Current - Supply: 4.8mA
Noise Figure: 0.6dB
P1dB: -10dBm
Test Frequency: 1.575GHz
Supplier Device Package: TSLP-6-3
Part Status: Obsolete
Description: IC AMP GPS 1.55-1.615GHZ TSLP6-3
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Frequency: 1.55GHz ~ 1.615GHz
RF Type: GPS
Voltage - Supply: 1.5V ~ 3.6V
Gain: 17dB
Current - Supply: 4.8mA
Noise Figure: 0.6dB
P1dB: -10dBm
Test Frequency: 1.575GHz
Supplier Device Package: TSLP-6-3
Part Status: Obsolete
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| BGS15MU14E6327XTSA1 |
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Виробник: Infineon Technologies
Description: IC RF SWITCH SP5T 6GHZ ULGA14-1
Packaging: Tape & Reel (TR)
Package / Case: 14-UFLGA Exposed Pad
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: SP5T
RF Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 1.95V
Insertion Loss: 1.05dB
Frequency Range: 400MHz ~ 6GHz
Test Frequency: 5.925GHz
Isolation: 48dB
Supplier Device Package: PG-ULGA-14-1
Part Status: Active
Description: IC RF SWITCH SP5T 6GHZ ULGA14-1
Packaging: Tape & Reel (TR)
Package / Case: 14-UFLGA Exposed Pad
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: SP5T
RF Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 1.95V
Insertion Loss: 1.05dB
Frequency Range: 400MHz ~ 6GHz
Test Frequency: 5.925GHz
Isolation: 48dB
Supplier Device Package: PG-ULGA-14-1
Part Status: Active
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| BGS15MU14E6327XTSA1 |
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Виробник: Infineon Technologies
Description: IC RF SWITCH SP5T 6GHZ ULGA14-1
Packaging: Cut Tape (CT)
Package / Case: 14-UFLGA Exposed Pad
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: SP5T
RF Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 1.95V
Insertion Loss: 1.05dB
Frequency Range: 400MHz ~ 6GHz
Test Frequency: 5.925GHz
Isolation: 48dB
Supplier Device Package: PG-ULGA-14-1
Part Status: Active
Description: IC RF SWITCH SP5T 6GHZ ULGA14-1
Packaging: Cut Tape (CT)
Package / Case: 14-UFLGA Exposed Pad
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: SP5T
RF Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 1.95V
Insertion Loss: 1.05dB
Frequency Range: 400MHz ~ 6GHz
Test Frequency: 5.925GHz
Isolation: 48dB
Supplier Device Package: PG-ULGA-14-1
Part Status: Active
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| BGS17GA14E6327XTSA1 |
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на замовлення 8800 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1065+ | 22.57 грн |
| PBL386212QNA |
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Виробник: Infineon Technologies
Description: BIPOLAR SLIC
Packaging: Bulk
Package / Case: 28-LCC (J-Lead)
Mounting Type: Surface Mount
Function: Subscriber Line Interface Circuit
Interface: 2-Wire
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.75V ~ 5.25V
Current - Supply: 2.8mA
Supplier Device Package: P/PG-LCC-28-3
Number of Circuits: 1
Power (Watts): 290 mW
Description: BIPOLAR SLIC
Packaging: Bulk
Package / Case: 28-LCC (J-Lead)
Mounting Type: Surface Mount
Function: Subscriber Line Interface Circuit
Interface: 2-Wire
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.75V ~ 5.25V
Current - Supply: 2.8mA
Supplier Device Package: P/PG-LCC-28-3
Number of Circuits: 1
Power (Watts): 290 mW
на замовлення 750 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 172+ | 135.87 грн |
| PBL38621/2QNT |
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Виробник: Infineon Technologies
Description: PBL38621/2 - FLEXISLIC, SUBSCRIB
Packaging: Bulk
Package / Case: 28-LCC (J-Lead)
Mounting Type: Surface Mount
Function: Subscriber Line Interface Circuit
Interface: 2-Wire
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.75V ~ 5.25V
Current - Supply: 4mA
Supplier Device Package: 28-PLCC
Number of Circuits: 1
Power (Watts): 1.5 W
Description: PBL38621/2 - FLEXISLIC, SUBSCRIB
Packaging: Bulk
Package / Case: 28-LCC (J-Lead)
Mounting Type: Surface Mount
Function: Subscriber Line Interface Circuit
Interface: 2-Wire
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.75V ~ 5.25V
Current - Supply: 4mA
Supplier Device Package: 28-PLCC
Number of Circuits: 1
Power (Watts): 1.5 W
на замовлення 1660 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 41+ | 573.77 грн |
| IDW40G65C5B |
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Виробник: Infineon Technologies
Description: IDW40G65 - COOLSIC SCHOTTKY DIOD
Description: IDW40G65 - COOLSIC SCHOTTKY DIOD
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| BGT60TR13CE6327XUMA1 |
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Виробник: Infineon Technologies
Description: SENSOR - RADAR SENSOR DIGITAL
Packaging: Tape & Reel (TR)
Package / Case: 119-WFBGA, WLBGA
Mounting Type: Surface Mount
Frequency: 57GHz ~ 64GHz
Type: TxRx Only
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 3.3V
Power - Output: 14.5dBm
Protocol: LTE
Current - Receiving: 428mA ~ 635mA
Data Rate (Max): 100Mbps
Current - Transmitting: 550mA
Supplier Device Package: PG-WFWLB-119-1
Modulation: GFSK
RF Family/Standard: Cellular
Serial Interfaces: SPI
Part Status: Active
DigiKey Programmable: Not Verified
Output Type: Digital
Sensor Type: Radar Sensor
Description: SENSOR - RADAR SENSOR DIGITAL
Packaging: Tape & Reel (TR)
Package / Case: 119-WFBGA, WLBGA
Mounting Type: Surface Mount
Frequency: 57GHz ~ 64GHz
Type: TxRx Only
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 3.3V
Power - Output: 14.5dBm
Protocol: LTE
Current - Receiving: 428mA ~ 635mA
Data Rate (Max): 100Mbps
Current - Transmitting: 550mA
Supplier Device Package: PG-WFWLB-119-1
Modulation: GFSK
RF Family/Standard: Cellular
Serial Interfaces: SPI
Part Status: Active
DigiKey Programmable: Not Verified
Output Type: Digital
Sensor Type: Radar Sensor
на замовлення 4500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4500+ | 812.56 грн |
| BGT60TR13CE6327XUMA1 |
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Виробник: Infineon Technologies
Description: SENSOR - RADAR SENSOR DIGITAL
Packaging: Cut Tape (CT)
Package / Case: 119-WFBGA, WLBGA
Mounting Type: Surface Mount
Frequency: 57GHz ~ 64GHz
Type: TxRx Only
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 3.3V
Power - Output: 14.5dBm
Protocol: LTE
Current - Receiving: 428mA ~ 635mA
Data Rate (Max): 100Mbps
Current - Transmitting: 550mA
Supplier Device Package: PG-WFWLB-119-1
Modulation: GFSK
RF Family/Standard: Cellular
Serial Interfaces: SPI
Part Status: Active
DigiKey Programmable: Not Verified
Output Type: Digital
Sensor Type: Radar Sensor
Description: SENSOR - RADAR SENSOR DIGITAL
Packaging: Cut Tape (CT)
Package / Case: 119-WFBGA, WLBGA
Mounting Type: Surface Mount
Frequency: 57GHz ~ 64GHz
Type: TxRx Only
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 3.3V
Power - Output: 14.5dBm
Protocol: LTE
Current - Receiving: 428mA ~ 635mA
Data Rate (Max): 100Mbps
Current - Transmitting: 550mA
Supplier Device Package: PG-WFWLB-119-1
Modulation: GFSK
RF Family/Standard: Cellular
Serial Interfaces: SPI
Part Status: Active
DigiKey Programmable: Not Verified
Output Type: Digital
Sensor Type: Radar Sensor
на замовлення 7818 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1291.88 грн |
| 10+ | 1082.97 грн |
| 25+ | 1027.27 грн |
| 100+ | 892.28 грн |
| 250+ | 849.34 грн |
| 500+ | 819.05 грн |
| TZ500N16KOFHPSA1 |
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Виробник: Infineon Technologies
Description: SCR MODULE 1.6KV 1050A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 17A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 669 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Part Status: Active
Current - On State (It (RMS)) (Max): 1050 A
Voltage - Off State: 1.6 kV
Description: SCR MODULE 1.6KV 1050A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 17A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 669 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Part Status: Active
Current - On State (It (RMS)) (Max): 1050 A
Voltage - Off State: 1.6 kV
на замовлення 3 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 14314.52 грн |
| TZ500N14KOFHPSA1 |
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Виробник: Infineon Technologies
Description: SCR MODULE 1.4KV 1050A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 17A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 669 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 1050 A
Voltage - Off State: 1.4 kV
Description: SCR MODULE 1.4KV 1050A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 17A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 669 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 1050 A
Voltage - Off State: 1.4 kV
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| TZ600N14KOFHPSA1 |
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Виробник: Infineon Technologies
Description: SCR MODULE 1.6KV 1050A MODULE
Description: SCR MODULE 1.6KV 1050A MODULE
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| REFFRIDGED111TRC2SLTOBO1 |
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Виробник: Infineon Technologies
Description: EVAL BOARD FOR IMD111T-6F040
Packaging: Bulk
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s), Cable(s)
Utilized IC / Part: IMD111T-6F040, IKD04N60RC2
Supplied Contents: Board(s), Cable(s)
Primary Attributes: Compressor
Embedded: Yes, MCU
Part Status: Active
Description: EVAL BOARD FOR IMD111T-6F040
Packaging: Bulk
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s), Cable(s)
Utilized IC / Part: IMD111T-6F040, IKD04N60RC2
Supplied Contents: Board(s), Cable(s)
Primary Attributes: Compressor
Embedded: Yes, MCU
Part Status: Active
на замовлення 2 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 15212.96 грн |
| TLV49645TBXALA1 |
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Виробник: Infineon Technologies
Description: MAGNETIC SWITCH UNIPOLAR TO92S
Features: Temperature Compensated
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 Short Body
Output Type: Open Drain
Polarization: South Pole
Mounting Type: Through Hole
Function: Unipolar Switch
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 3V ~ 26V
Technology: Hall Effect
Sensing Range: 10.4mT Trip, 2.8mT Release
Current - Output (Max): 25mA
Current - Supply (Max): 2.5mA
Supplier Device Package: TO-92S
Test Condition: 25°C
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
Description: MAGNETIC SWITCH UNIPOLAR TO92S
Features: Temperature Compensated
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 Short Body
Output Type: Open Drain
Polarization: South Pole
Mounting Type: Through Hole
Function: Unipolar Switch
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 3V ~ 26V
Technology: Hall Effect
Sensing Range: 10.4mT Trip, 2.8mT Release
Current - Output (Max): 25mA
Current - Supply (Max): 2.5mA
Supplier Device Package: TO-92S
Test Condition: 25°C
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
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од. на суму грн.
| TLI49631MXTSA1 |
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Виробник: Infineon Technologies
Description: MAGNETIC SWITCH LATCH SOT23-3
Features: Temperature Compensated
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Open Drain
Polarization: South Pole
Mounting Type: Surface Mount
Function: Latch
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 5.5V
Technology: Hall Effect
Sensing Range: 3.5mT Trip, -3.5mT Release
Current - Output (Max): 5mA
Current - Supply (Max): 2.5mA
Supplier Device Package: PG-SOT23-3-15
Test Condition: 25°C
Grade: Automotive
Qualification: AEC-Q100
Description: MAGNETIC SWITCH LATCH SOT23-3
Features: Temperature Compensated
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Open Drain
Polarization: South Pole
Mounting Type: Surface Mount
Function: Latch
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 5.5V
Technology: Hall Effect
Sensing Range: 3.5mT Trip, -3.5mT Release
Current - Output (Max): 5mA
Current - Supply (Max): 2.5mA
Supplier Device Package: PG-SOT23-3-15
Test Condition: 25°C
Grade: Automotive
Qualification: AEC-Q100
на замовлення 4470 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 28.10 грн |
| 15+ | 21.98 грн |
| 25+ | 19.15 грн |
| 50+ | 18.16 грн |
| 100+ | 17.27 грн |
| 500+ | 15.23 грн |
| 1000+ | 14.57 грн |
| BSM400GA170DLS |
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Виробник: Infineon Technologies
Description: IGBT MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.3V @ 15V, 400A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Active
Current - Collector (Ic) (Max): 800 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 3120 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 27 nF @ 25 V
Description: IGBT MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.3V @ 15V, 400A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Active
Current - Collector (Ic) (Max): 800 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 3120 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 27 nF @ 25 V
на замовлення 2 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 9919.00 грн |
| IPB80P03P4L07ATMA2 |
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Виробник: Infineon Technologies
Description: MOSFET_(20V 40V) PG-TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.9mOhm @ 80A, 10V
Power Dissipation (Max): 88W (Tc)
Vgs(th) (Max) @ Id: 2V @ 130µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET_(20V 40V) PG-TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.9mOhm @ 80A, 10V
Power Dissipation (Max): 88W (Tc)
Vgs(th) (Max) @ Id: 2V @ 130µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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од. на суму грн.
| KITIM69D127V11FLEXTOBO1 |
Виробник: Infineon Technologies
Description: EVAL BOARD FOR IM69D127V11
Packaging: Bulk
Function: MEMS Omnidirectional Microphones
Type: Audio
Utilized IC / Part: IM69D127V11
Supplied Contents: Board(s)
Primary Attributes: Digital Output
Part Status: Active
Description: EVAL BOARD FOR IM69D127V11
Packaging: Bulk
Function: MEMS Omnidirectional Microphones
Type: Audio
Utilized IC / Part: IM69D127V11
Supplied Contents: Board(s)
Primary Attributes: Digital Output
Part Status: Active
на замовлення 1 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 2235.45 грн |
| IFX2931GV33 |
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Виробник: Infineon Technologies
Description: IC REG LINEAR FIXED POS LDO REG
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 1 mA
Voltage - Input (Max): 26V
Number of Regulators: 1
Supplier Device Package: PG-DSO-8-1
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
PSRR: 80dB (120Hz)
Voltage Dropout (Max): 1.1V @ 100mA
Protection Features: Antisaturation, Mirror-Image Insertion, Over Current, Over Temperature, Reverse Polarity
Current - Supply (Max): 15 mA
Description: IC REG LINEAR FIXED POS LDO REG
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 1 mA
Voltage - Input (Max): 26V
Number of Regulators: 1
Supplier Device Package: PG-DSO-8-1
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
PSRR: 80dB (120Hz)
Voltage Dropout (Max): 1.1V @ 100mA
Protection Features: Antisaturation, Mirror-Image Insertion, Over Current, Over Temperature, Reverse Polarity
Current - Supply (Max): 15 mA
на замовлення 1648 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1648+ | 15.32 грн |
| IFX8117MEV33 |
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Виробник: Infineon Technologies
Description: IC REG LINEAR FIXED LDO REG
Description: IC REG LINEAR FIXED LDO REG
на замовлення 2950 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1501+ | 17.75 грн |
| TLE4954CE4807BAMA1 |
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Виробник: Infineon Technologies
Description: SPEED & CURRENT SENSORS
Description: SPEED & CURRENT SENSORS
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 152+ | 154.13 грн |
| BAV 99 E6433 |
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Виробник: Infineon Technologies
Description: DIODE ARRAY GP 80V 200MA SOT23
Description: DIODE ARRAY GP 80V 200MA SOT23
товару немає в наявності
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| ISP06P008NSATMA1 |
Виробник: Infineon Technologies
Description: MOSFET P-CH SOT223-3
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Supplier Device Package: PG-SOT223
Part Status: Obsolete
Description: MOSFET P-CH SOT223-3
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Supplier Device Package: PG-SOT223
Part Status: Obsolete
товару немає в наявності
В кошику
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| IAUC100N04S6L014ATMA1 |
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Виробник: Infineon Technologies
Description: IAUC100N04S6L014ATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 2V @ 50µA
Supplier Device Package: PG-TDSON-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3935 pF @ 25 V
Qualification: AEC-Q101
Description: IAUC100N04S6L014ATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 2V @ 50µA
Supplier Device Package: PG-TDSON-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3935 pF @ 25 V
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5000+ | 35.86 грн |
| IAUC100N04S6L014ATMA1 |
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Виробник: Infineon Technologies
Description: IAUC100N04S6L014ATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 2V @ 50µA
Supplier Device Package: PG-TDSON-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3935 pF @ 25 V
Qualification: AEC-Q101
Description: IAUC100N04S6L014ATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 2V @ 50µA
Supplier Device Package: PG-TDSON-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3935 pF @ 25 V
Qualification: AEC-Q101
на замовлення 8614 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 139.66 грн |
| 10+ | 85.45 грн |
| 100+ | 57.58 грн |
| 500+ | 42.81 грн |
| 1000+ | 39.66 грн |
| IRFI7446GPBF |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 80A TO220AB FP
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 48A, 10V
Power Dissipation (Max): 40.5W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 100µA
Supplier Device Package: TO-220AB Full-Pak
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3199 pF @ 25 V
Description: MOSFET N-CH 40V 80A TO220AB FP
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 48A, 10V
Power Dissipation (Max): 40.5W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 100µA
Supplier Device Package: TO-220AB Full-Pak
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3199 pF @ 25 V
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 338+ | 69.27 грн |
| BSF030NE2LQXUMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 25V 24A/75A 2WDSON
Description: MOSFET N-CH 25V 24A/75A 2WDSON
товару немає в наявності
В кошику
од. на суму грн.
| BSF030NE2LQXUMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 25V 24A/75A 2WDSON
Description: MOSFET N-CH 25V 24A/75A 2WDSON
на замовлення 4785 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 90.27 грн |
| 10+ | 78.07 грн |
| 100+ | 60.82 грн |
| 500+ | 47.15 грн |
| 1000+ | 37.22 грн |
| 2000+ | 34.74 грн |
| TLF4949EJ |
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Виробник: Infineon Technologies
Description: IC REG LINEAR VOLT TLF4949
Description: IC REG LINEAR VOLT TLF4949
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 737+ | 34.86 грн |
| BSF083N03LQG |
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Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: 3-WDSON
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 53A (Tc)
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 20A, 10V
Power Dissipation (Max): 2.2W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: MG-WDSON-2, CanPAK M™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 15 V
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: 3-WDSON
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 53A (Tc)
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 20A, 10V
Power Dissipation (Max): 2.2W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: MG-WDSON-2, CanPAK M™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 15 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 717+ | 34.31 грн |
| BSC205N10LSG |
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Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Description: N-CHANNEL POWER MOSFET
на замовлення 5751 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 662+ | 36.42 грн |
| BSC029N025SG |
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Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 50A, 10V
Power Dissipation (Max): 2.8W (Ta), 78W (Tc)
Vgs(th) (Max) @ Id: 2V @ 80µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 5090 pF @ 15 V
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 50A, 10V
Power Dissipation (Max): 2.8W (Ta), 78W (Tc)
Vgs(th) (Max) @ Id: 2V @ 80µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 5090 pF @ 15 V
на замовлення 8868 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 402+ | 63.87 грн |
| BSC886N03LSGATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 13A/65A TDSON
Description: MOSFET N-CH 30V 13A/65A TDSON
на замовлення 8585 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1205+ | 21.49 грн |
| BAS70E6327 |
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Виробник: Infineon Technologies
Description: BAS70 - HIGH SPEED SWITCHING, CL
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 100 ps
Technology: Schottky
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 70mA
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Description: BAS70 - HIGH SPEED SWITCHING, CL
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 100 ps
Technology: Schottky
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 70mA
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
на замовлення 107857 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3893+ | 6.81 грн |



































