Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (123003) > Сторінка 458 з 2051
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||
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BSC205N10LSG | Infineon Technologies |
Description: N-CHANNEL POWER MOSFET |
на замовлення 5751 шт: термін постачання 21-31 дні (днів) |
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BSC029N025SG | Infineon Technologies |
Description: N-CHANNEL POWER MOSFETPackaging: Bulk Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 2.9mOhm @ 50A, 10V Power Dissipation (Max): 2.8W (Ta), 78W (Tc) Vgs(th) (Max) @ Id: 2V @ 80µA Supplier Device Package: PG-TDSON-8-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 5090 pF @ 15 V |
на замовлення 8868 шт: термін постачання 21-31 дні (днів) |
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BSC886N03LSGATMA1 | Infineon Technologies |
Description: MOSFET N-CH 30V 13A/65A TDSON |
на замовлення 8585 шт: термін постачання 21-31 дні (днів) |
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BAS70E6327 | Infineon Technologies |
Description: BAS70 - HIGH SPEED SWITCHING, CLCurrent - Reverse Leakage @ Vr: 100 nA @ 50 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA Voltage - DC Reverse (Vr) (Max): 70 V Part Status: Active Operating Temperature - Junction: 150°C Supplier Device Package: PG-SOT23 Current - Average Rectified (Io): 70mA Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz Technology: Schottky Reverse Recovery Time (trr): 100 ps Speed: Small Signal =< 200mA (Io), Any Speed Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Bulk |
на замовлення 107857 шт: термін постачання 21-31 дні (днів) |
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IPL65R130CFD7AUMA1 | Infineon Technologies |
Description: COOLMOS CFD7 SUPERJUNCTION MOSFEInput Capacitance (Ciss) (Max) @ Vds: 1694 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: PG-VSON-4 Vgs(th) (Max) @ Id: 4.5V @ 420µA Power Dissipation (Max): 127W (Tc) Rds On (Max) @ Id, Vgs: 130mOhm @ 8.5A, 10V Current - Continuous Drain (Id) @ 25°C: 21A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-PowerTSFN Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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IPL65R130CFD7AUMA1 | Infineon Technologies |
Description: COOLMOS CFD7 SUPERJUNCTION MOSFEInput Capacitance (Ciss) (Max) @ Vds: 1694 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: PG-VSON-4 Vgs(th) (Max) @ Id: 4.5V @ 420µA Power Dissipation (Max): 127W (Tc) Rds On (Max) @ Id, Vgs: 130mOhm @ 8.5A, 10V Current - Continuous Drain (Id) @ 25°C: 21A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-PowerTSFN Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IPT039N15N5ATMA1 | Infineon Technologies |
Description: OPTIMOS 5 POWER MOSFETPackaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 190A (Tc) Rds On (Max) @ Id, Vgs: 3.9mOhm @ 50A, 10V Power Dissipation (Max): 3.8W (Ta), 319W (Tc) Vgs(th) (Max) @ Id: 4.6V @ 257µA Supplier Device Package: PG-HSOF-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7700 pF @ 75 V |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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IPT039N15N5ATMA1 | Infineon Technologies |
Description: OPTIMOS 5 POWER MOSFETPackaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 190A (Tc) Rds On (Max) @ Id, Vgs: 3.9mOhm @ 50A, 10V Power Dissipation (Max): 3.8W (Ta), 319W (Tc) Vgs(th) (Max) @ Id: 4.6V @ 257µA Supplier Device Package: PG-HSOF-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7700 pF @ 75 V |
на замовлення 3898 шт: термін постачання 21-31 дні (днів) |
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BAT1706WE6327 | Infineon Technologies |
Description: DIODE SCHOTTKY 4V 150MW SOT-323Packaging: Bulk Package / Case: SC-70, SOT-323 Diode Type: Schottky - 1 Pair Common Anode Operating Temperature: 150°C (TJ) Capacitance @ Vr, F: 0.75pF @ 0V, 1MHz Resistance @ If, F: 15Ohm @ 5mA, 10kHz Voltage - Peak Reverse (Max): 4V Supplier Device Package: SOT-323 Current - Max: 130 mA Power Dissipation (Max): 150 mW |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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TT162N14KOFHPSA2 | Infineon Technologies |
Description: THYR / DIODE MODULE DKPackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Operating Temperature: 125°C (TJ) Structure: Series Connection - All SCRs Current - Hold (Ih) (Max): 200 mA Current - Gate Trigger (Igt) (Max): 150 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 5200A @ 50Hz Number of SCRs, Diodes: 2 SCRs Current - On State (It (AV)) (Max): 162 A Voltage - Gate Trigger (Vgt) (Max): 2 V Part Status: Active Current - On State (It (RMS)) (Max): 260 A Voltage - Off State: 1.4 kV |
на замовлення 8 шт: термін постачання 21-31 дні (днів) |
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CY25404ZXI012 | Infineon Technologies |
Description: IC CLOCK GENERATORDigiKey Programmable: Not Verified Packaging: Bulk |
на замовлення 2172 шт: термін постачання 21-31 дні (днів) |
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CY25404ZXI011 | Infineon Technologies |
Description: IC CLOCK GENERATORDigiKey Programmable: Not Verified Packaging: Bulk |
на замовлення 3053 шт: термін постачання 21-31 дні (днів) |
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BGT60LTR11AIPE6327XUMA2 | Infineon Technologies |
Description: IC RF TXRX+MCU ISM>1GHZ 42UF2BGAProtocol: ISM Part Status: Active Serial Interfaces: SPI RF Family/Standard: General ISM > 1GHz Supplier Device Package: PG-UF2BGA-42 Voltage - Supply: 1.5V ~ 5V Type: TxRx + MCU Frequency: 60GHz Mounting Type: Surface Mount Package / Case: 42-BGA Packaging: Tape & Reel (TR) DigiKey Programmable: Not Verified |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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BGT60LTR11AIPE6327XUMA2 | Infineon Technologies |
Description: IC RF TXRX+MCU ISM>1GHZ 42UF2BGAProtocol: ISM Voltage - Supply: 1.5V ~ 5V Type: TxRx + MCU Frequency: 60GHz Mounting Type: Surface Mount Package / Case: 42-BGA Packaging: Cut Tape (CT) DigiKey Programmable: Not Verified Part Status: Active Serial Interfaces: SPI RF Family/Standard: General ISM > 1GHz Supplier Device Package: PG-UF2BGA-42 |
на замовлення 7482 шт: термін постачання 21-31 дні (днів) |
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SHIELDBGT60LTR11AIPTOBO1 | Infineon Technologies |
Description: EVAL BOARD FOR BGT60LTR11AIPPart Status: Active Platform: Arduino MKR Utilized IC / Part: BGT60LTR11AIP Contents: Board(s) Type: Sensor Function: Radar Packaging: Bulk |
на замовлення 13 шт: термін постачання 21-31 дні (днів) |
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94-3250 | Infineon Technologies |
Description: MOSFET N-CH 30V 12A DIRECTFETInput Capacitance (Ciss) (Max) @ Vds: 2270 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V Supplier Device Package: DIRECTFET™ MQ Vgs(th) (Max) @ Id: 2.1V @ 250µA Power Dissipation (Max): 2.3W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 11.5mOhm @ 12A, 7V Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 49A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: DirectFET™ Isometric MQ Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IRF6601 | Infineon Technologies |
Description: MOSFET N-CH 20V 26A DIRECTFETInput Capacitance (Ciss) (Max) @ Vds: 3440 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: DIRECTFET™ MT Vgs(th) (Max) @ Id: 2.2V @ 250µA Power Dissipation (Max): 3.6W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 3.8mOhm @ 26A, 10V Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 85A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Mounting Type: Surface Mount Package / Case: DirectFET™ Isometric MT Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IRF6602 | Infineon Technologies |
Description: MOSFET N-CH 20V 11A DIRECTFETInput Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: DIRECTFET™ MQ Vgs(th) (Max) @ Id: 2.3V @ 250µA Power Dissipation (Max): 2.3W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 13mOhm @ 11A, 10V Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 48A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Mounting Type: Surface Mount Package / Case: DirectFET™ Isometric MQ Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BCR521E6327 | Infineon Technologies |
Description: BIPOLAR DIGITAL TRANSISTORPackaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 50mA, 5V Supplier Device Package: PG-SOT23-3-3 Part Status: Active Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 330 mW Frequency - Transition: 100 MHz Resistor - Base (R1): 1 kOhms Resistor - Emitter Base (R2): 1 kOhms |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DDB6U50N16W1RPB11BPSA1 | Infineon Technologies |
Description: IGBT MODULE 1200V 50A AG-EASY1BPackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Three Phase Bridge Rectifier Configuration: Single Chopper Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 50A NTC Thermistor: No Supplier Device Package: AG-EASY1B IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 50 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Cutoff (Max): 6.2 µA Input Capacitance (Cies) @ Vce: 11.1 nF @ 25 V |
на замовлення 30 шт: термін постачання 21-31 дні (днів) |
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TLS850C2TEV50BOARDTOBO1 | Infineon Technologies |
Description: TLS850C2TE V50 BOARDPart Status: Active Channels per IC: 1 - Single Supplied Contents: Board(s) Utilized IC / Part: TLS850C2TEV50 Board Type: Fully Populated Regulator Type: Positive Fixed Current - Output: 500mA Voltage - Input: 3V ~ 40V Voltage - Output: 5V Packaging: Bulk |
на замовлення 3 шт: термін постачання 21-31 дні (днів) |
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| STT3300N18P76XPSA1 | Infineon Technologies |
Description: THYR / DIODE MODULE DK BG-PS76-1 Packaging: Tray Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| SAL-TC270TP-64F200NDC | Infineon Technologies |
Description: TC270 - RISC FLASH MICROCONTROLLPackaging: Bulk Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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TC277TP64F200SDCKXUMA3 | Infineon Technologies |
Description: IC MCU 32BIT 4MB FLASH 292LFBGANumber of I/O: 169 Part Status: Active Supplier Device Package: PG-LFBGA-292-6 Peripherals: DMA, POR, WDT Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I²C, LINbus, MSC, PSI5, QSPI, SENT Voltage - Supply (Vcc/Vdd): 1.17V ~ 5.5V Core Size: 32-Bit Tri-Core Data Converters: A/D 60x12b SAR, Sigma-Delta Core Processor: TriCore™ EEPROM Size: 64K x 8 Program Memory Type: FLASH Oscillator Type: External Operating Temperature: -40°C ~ 125°C (TA) RAM Size: 472K x 8 Program Memory Size: 4MB (4M x 8) Speed: 200MHz Mounting Type: Surface Mount Package / Case: 292-LFBGA Packaging: Tape & Reel (TR) DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||
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TC275TP64F200WDBKXUMA1 | Infineon Technologies | Description: IC MICROCONTROLLER |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TC277TP64F200SCAKXUMA2 | Infineon Technologies |
Description: IC MCU 32BIT 4MB FLASH 292LFBGAPackaging: Tape & Reel (TR) Package / Case: 292-LFBGA Mounting Type: Surface Mount Speed: 200MHz Program Memory Size: 4MB (4M x 8) RAM Size: 472K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: External Program Memory Type: FLASH EEPROM Size: 64K x 8 Core Processor: TriCore™ Data Converters: A/D 60x12b SAR, Sigma-Delta Core Size: 32-Bit Tri-Core Voltage - Supply (Vcc/Vdd): 1.17V ~ 5.5V Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I²C, LINbus, MSC, PSI5, QSPI, SENT Peripherals: DMA, POR, WDT Supplier Device Package: PG-LFBGA-292-6 Part Status: Active Number of I/O: 169 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TC275TP64F200WCAKXQMA1 | Infineon Technologies | Description: IC MICROCONTROLLER |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SAK-TC275TP-64F200N DC | Infineon Technologies |
Description: IC MCU 32BIT 4MB FLASH 176LQFPPackaging: Tape & Reel (TR) Package / Case: 176-LQFP Exposed Pad Mounting Type: Surface Mount Speed: 200MHz Program Memory Size: 4MB (4M x 8) RAM Size: 472K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: External Program Memory Type: FLASH EEPROM Size: 64K x 8 Core Processor: TriCore™ Data Converters: A/D 48x12b SAR, Sigma-Delta Core Size: 32-Bit Tri-Core Voltage - Supply (Vcc/Vdd): 1.17V ~ 5.5V Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT Peripherals: DMA, POR, WDT Supplier Device Package: PG-LQFP-176-22 Part Status: Active Number of I/O: 169 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TC277TP64F200SDBKXUMA1 | Infineon Technologies |
Description: IC MCU 32BIT 4MB FLASH 292LFBGA Number of I/O: 169 Part Status: Active Supplier Device Package: PG-LFBGA-292-6 Peripherals: DMA, POR, WDT Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I²C, LINbus, MSC, PSI5, QSPI, SENT Voltage - Supply (Vcc/Vdd): 1.17V ~ 5.5V Core Size: 32-Bit Tri-Core Data Converters: A/D 60x12b SAR, Sigma-Delta Core Processor: TriCore™ EEPROM Size: 64K x 8 Program Memory Type: FLASH Oscillator Type: External Operating Temperature: -40°C ~ 125°C (TA) RAM Size: 472K x 8 Program Memory Size: 4MB (4M x 8) Speed: 200MHz Mounting Type: Surface Mount Package / Case: 292-LFBGA Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TC277TP64F200SDBKXUMA2 | Infineon Technologies |
Description: IC MCU 32BIT 4MB FLASH 292LFBGANumber of I/O: 169 Part Status: Active Supplier Device Package: PG-LFBGA-292-6 Peripherals: DMA, POR, WDT Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I²C, LINbus, MSC, PSI5, QSPI, SENT Voltage - Supply (Vcc/Vdd): 1.17V ~ 5.5V Core Size: 32-Bit Tri-Core Data Converters: A/D 60x12b SAR, Sigma-Delta Core Processor: TriCore™ EEPROM Size: 64K x 8 Program Memory Type: FLASH Oscillator Type: External Operating Temperature: -40°C ~ 125°C (TA) RAM Size: 472K x 8 Program Memory Size: 4MB (4M x 8) Speed: 200MHz Mounting Type: Surface Mount Package / Case: 292-LFBGA Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| SAL-TC270TP-64F200N DC | Infineon Technologies |
Description: IC MCU 32BIT 4MB FLASH DIEPart Status: Active Supplier Device Package: Die Peripherals: DMA, POR, WDT Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I²C, LINbus, MSC, PSI5, QSPI, SENT Voltage - Supply (Vcc/Vdd): 1.17V ~ 5.5V Core Size: 32-Bit Tri-Core Data Converters: A/D 60x12b SAR, Sigma-Delta Core Processor: TriCore™ EEPROM Size: 64K x 8 Program Memory Type: FLASH Oscillator Type: External Operating Temperature: -40°C ~ 150°C (TA) RAM Size: 472K x 8 Program Memory Size: 4MB (4M x 8) Speed: 200MHz Mounting Type: Surface Mount Package / Case: Die Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| SAL-TC270TP-64F200 CA | Infineon Technologies |
Description: IC MCU 32BIT 4MB FLASH DIE Packaging: Tape & Reel (TR) Package / Case: Die Mounting Type: Surface Mount Speed: 200MHz Program Memory Size: 4MB (4M x 8) RAM Size: 472K x 8 Operating Temperature: -40°C ~ 170°C (TA) Oscillator Type: External Program Memory Type: FLASH EEPROM Size: 64K x 8 Core Processor: TriCore™ Data Converters: A/D 60x12b SAR, Sigma-Delta Core Size: 32-Bit Tri-Core Voltage - Supply (Vcc/Vdd): 1.17V ~ 5.5V Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I²C, LINbus, MSC, PSI5, QSPI, SENT Peripherals: DMA, POR, WDT Supplier Device Package: Die Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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SAK-TC222L-12F133F AB | Infineon Technologies |
Description: IC MCU 32BIT 1MB FLASH 80TQFP Packaging: Tape & Reel (TR) Package / Case: 80-TQFP Exposed Pad Mounting Type: Surface Mount Speed: 133MHz Program Memory Size: 1MB (1M x 8) RAM Size: 96K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: External Program Memory Type: FLASH EEPROM Size: 128K x 8 Core Processor: TriCore™ Data Converters: A/D 24x12b SAR Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 1.17V ~ 5.5V Connectivity: CANbus, FlexRay, LINbus, QSPI Peripherals: DMA, WDT Supplier Device Package: PG-TQFP-80-7 Part Status: Obsolete Number of I/O: 59 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TLE5109EVALKITTOBO2 | Infineon Technologies |
Description: TLE5109 EVAL KITPackaging: Bulk Sensitivity: 0.1° Voltage - Supply: 3V ~ 3.6V Sensor Type: Magnetic, AMR (Anisotropic Magnetoresistive) Utilized IC / Part: TLE5109, XMC4700 Supplied Contents: Board(s) Embedded: Yes, MCU, 32-Bit Sensing Range: 180° Part Status: Active |
на замовлення 3 шт: термін постачання 21-31 дні (днів) |
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REFICL8800LED43WTOBO1 | Infineon Technologies |
Description: ICL8800 REF BOARD 43WPart Status: Active Outputs and Type: 1 Isolated Output Supplied Contents: Board(s) Utilized IC / Part: ICL8800 Voltage - Input: 90 ~ 305 VAC Voltage - Output: 52V Features: Dimmable Packaging: Bulk |
на замовлення 3 шт: термін постачання 21-31 дні (днів) |
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EVALM1CM610N3TOBO2 | Infineon Technologies |
Description: EVAL BOARD FOR IKCM10H60GAPackaging: Bulk Function: Motor Controller/Driver Type: Power Management Contents: Board(s) Utilized IC / Part: IKCM10H60GA Supplied Contents: Board(s) Primary Attributes: 110VAC ~ 240VAC Input Voltage Secondary Attributes: On-Board LEDs Embedded: Yes, MCU Part Status: Active |
на замовлення 18 шт: термін постачання 21-31 дні (днів) |
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| F3L11MR12W2M1C01BOMA1 | Infineon Technologies | Description: IC SIC MOSFET LOW POWER |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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KP216K1409 | Infineon Technologies |
Description: SENSOR 16.68PSIA 4.5V DSOF8Part Status: Active Port Style: No Port Supplier Device Package: PG-DSOF-8-16 Applications: Board Mount Voltage - Supply: 4.5V ~ 5.5V Termination Style: SMD (SMT) Tab Operating Temperature: -40°C ~ 140°C (TA) Accuracy: ±0.65PSI (4.50kPa) Pressure Type: Absolute Operating Pressure: 2.18 ~ 16.68PSI (15 ~ 115kPa) Output: 0.5 V ~ 4.5 V Mounting Type: Surface Mount Output Type: Analog Voltage Package / Case: 8-SMD Module Features: Amplified Output, Temperature Compensated Packaging: Bulk |
на замовлення 20777 шт: термін постачання 21-31 дні (днів) |
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PEF24911HV2.1 | Infineon Technologies |
Description: ISDN ECHOCANCELLER DFE Packaging: Bulk Part Status: Active |
на замовлення 176 шт: термін постачання 21-31 дні (днів) |
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PEF24911HV1.3 | Infineon Technologies |
Description: ISDN ECHOCANCELLER DFE Packaging: Bulk Part Status: Active |
на замовлення 20098 шт: термін постачання 21-31 дні (днів) |
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PEB24911H | Infineon Technologies |
Description: DFE-Q QUAD ISDN ECHOCANCELLER DI Packaging: Bulk Part Status: Active |
на замовлення 484 шт: термін постачання 21-31 дні (днів) |
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TLE7259-3LE | Infineon Technologies |
Description: IC TRANSCEIVER FULL 1/1 TSON-8Packaging: Bulk Package / Case: 8-TDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Type: Transceiver Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 5.5V ~ 27V Number of Drivers/Receivers: 1/1 Data Rate: 20kbps Protocol: LIN Supplier Device Package: PG-TSON-8-1 Receiver Hysteresis: 300 mV Duplex: Full Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TLD60982ESXUMA2 | Infineon Technologies |
Description: IC LED DRVR CTRLR PWM 1A 24TSDSOPackaging: Tape & Reel (TR) Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad Voltage - Output: 70V Mounting Type: Surface Mount Number of Outputs: 2 Frequency: 100kHz ~ 500kHz Type: DC DC Controller Operating Temperature: -40°C ~ 150°C (TJ) Current - Output / Channel: 1A Internal Switch(s): No Topology: Step-Up (Boost) Supplier Device Package: PG-TSDSO-24 Dimming: PWM Voltage - Supply (Min): 4.5V Voltage - Supply (Max): 58V Grade: Automotive Part Status: Active |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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TLD60982ESXUMA2 | Infineon Technologies |
Description: IC LED DRVR CTRLR PWM 1A 24TSDSOPart Status: Active Voltage - Supply (Max): 58V Voltage - Supply (Min): 4.5V Dimming: PWM Supplier Device Package: PG-TSDSO-24 Topology: Step-Up (Boost) Internal Switch(s): No Current - Output / Channel: 1A Operating Temperature: -40°C ~ 150°C (TJ) Type: DC DC Controller Frequency: 100kHz ~ 500kHz Number of Outputs: 2 Mounting Type: Surface Mount Voltage - Output: 70V Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad Packaging: Cut Tape (CT) Grade: Automotive |
на замовлення 2700 шт: термін постачання 21-31 дні (днів) |
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IMZA120R014M1HXKSA1 | Infineon Technologies |
Description: SIC DISCRETEPackaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 127A (Tc) Rds On (Max) @ Id, Vgs: 18.4mOhm @ 54.3A, 18V Power Dissipation (Max): 455W (Tc) Vgs(th) (Max) @ Id: 5.2V @ 23.4mA Supplier Device Package: PG-TO247-4-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +20V, -5V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 4580 pF @ 25 V |
на замовлення 4331 шт: термін постачання 21-31 дні (днів) |
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IMZA120R007M1HXKSA1 | Infineon Technologies |
Description: SIC DISCRETEPackaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 225A (Tc) Rds On (Max) @ Id, Vgs: 9.9mOhm @ 108A, 18V Power Dissipation (Max): 750W (Tc) Vgs(th) (Max) @ Id: 5.2V @ 47mA Supplier Device Package: PG-TO247-4-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +20V, -5V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 289 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 9170 pF @ 800 V |
на замовлення 1225 шт: термін постачання 21-31 дні (днів) |
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IMZA120R040M1HXKSA1 | Infineon Technologies |
Description: SIC DISCRETEPackaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 55A (Tc) Rds On (Max) @ Id, Vgs: 54.4mOhm @ 19.3A, 18V Power Dissipation (Max): 227W (Tc) Vgs(th) (Max) @ Id: 5.2V @ 8.3mA Supplier Device Package: PG-TO247-4-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +20V, -5V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 800 V |
на замовлення 239 шт: термін постачання 21-31 дні (днів) |
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IMZA120R020M1HXKSA1 | Infineon Technologies |
Description: SIC DISCRETEPackaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 98A (Tc) Rds On (Max) @ Id, Vgs: 26.9mOhm @ 41A, 18V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 5.2V @ 17.6mA Supplier Device Package: PG-TO247-4-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +20V, -5V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 3460 pF @ 800 V |
на замовлення 666 шт: термін постачання 21-31 дні (днів) |
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IMW120R007M1HXKSA1 | Infineon Technologies |
Description: SIC DISCRETEPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 225A (Tc) Rds On (Max) @ Id, Vgs: 9.9mOhm @ 108A, 18V Power Dissipation (Max): 750W (Tc) Vgs(th) (Max) @ Id: 5.2V @ 47mA Supplier Device Package: PG-TO247-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +20V, -5V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 289 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 9170 pF @ 800 V |
на замовлення 1058 шт: термін постачання 21-31 дні (днів) |
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BAS4002LE6327 | Infineon Technologies |
Description: DIODE SCHOTT 40V 120MA TSLP-2-1Current - Reverse Leakage @ Vr: 1 µA @ 30 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA Voltage - DC Reverse (Vr) (Max): 40 V Operating Temperature - Junction: 150°C Supplier Device Package: PG-TSLP-2-1 Current - Average Rectified (Io): 120mA Capacitance @ Vr, F: 3pF @ 0V, 1MHz Technology: Schottky Speed: Small Signal =< 200mA (Io), Any Speed Mounting Type: Surface Mount Package / Case: SOD-882 Packaging: Bulk |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
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IPI147N12N3G | Infineon Technologies |
Description: IPI147N12 - 12V-300V N-CHANNEL PInput Capacitance (Ciss) (Max) @ Vds: 3220 pF @ 60 V Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V Drain to Source Voltage (Vdss): 120 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: PG-TO262-3-1 Vgs(th) (Max) @ Id: 4V @ 61µA Power Dissipation (Max): 107W (Tc) Rds On (Max) @ Id, Vgs: 14.7mOhm @ 56A, 10V Current - Continuous Drain (Id) @ 25°C: 56A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Packaging: Bulk |
на замовлення 14603 шт: термін постачання 21-31 дні (днів) |
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BSO211PH | Infineon Technologies |
Description: MOSFET 2P-CH 20V 4A 532FCBGAMounting Type: Surface Mount Package / Case: 532-BFBGA, FCBGA Packaging: Bulk Part Status: Active Supplier Device Package: 532-FCBGA (23x23) Vgs(th) (Max) @ Id: 1.2V @ 25µA FET Feature: Logic Level Gate, 2.5V Drive Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V Rds On (Max) @ Id, Vgs: 67mOhm @ 4.6A, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1095pF @ 15V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Drain to Source Voltage (Vdss): 20V Power - Max: 1.6W (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 P-Channel (Dual) |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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| PEB31666HV1.2D | Infineon Technologies |
Description: MUSLIC MULTICHANNEL SLIC Packaging: Bulk |
на замовлення 887 шт: термін постачання 21-31 дні (днів) |
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TLE4699EXUMA1 | Infineon Technologies |
Description: IC REG LINEAR 5V PG-SSOP-14-EPPackaging: Cut Tape (CT) Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 200mA Operating Temperature: -40°C ~ 150°C Output Configuration: Positive Current - Quiescent (Iq): 100 µA Voltage - Input (Max): 45V Number of Regulators: 1 Supplier Device Package: PG-SSOP-14-EP Voltage - Output (Min/Fixed): 5V Control Features: Enable, Reset Grade: Automotive Part Status: Active PSRR: 65dB (100Hz) Voltage Dropout (Max): 0.35V @ 150mA Protection Features: Over Temperature, Reverse Polarity, Short Circuit Current - Supply (Max): 10 mA Qualification: AEC-Q100 |
на замовлення 838 шт: термін постачання 21-31 дні (днів) |
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| FS300R120E4B0SA1 | Infineon Technologies |
Description: IGBT MODULE |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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FS300R17KE4BOSA1 | Infineon Technologies |
Description: IGBT MOD 1700V 375A 1800W |
на замовлення 3 шт: термін постачання 21-31 дні (днів) |
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FS300R17KE4BOSA1 | Infineon Technologies |
Description: IGBT MOD 1700V 375A 1800W |
товару немає в наявності |
Мінімальне замовлення: 4 шт В кошику од. на суму грн. | ||||||||||||||
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FS300R12KE4BOSA1 | Infineon Technologies |
Description: IGBT MOD 1200V 450A 1600W |
на замовлення 8 шт: термін постачання 21-31 дні (днів) |
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FS300R12KE4BOSA1 | Infineon Technologies |
Description: IGBT MOD 1200V 450A 1600W |
товару немає в наявності |
Мінімальне замовлення: 4 шт В кошику од. на суму грн. | ||||||||||||||
| FS300R17OE4PBOSA1 | Infineon Technologies |
Description: MOD IGBT MED PWR ECONOPP-2 Packaging: Bulk |
на замовлення 32 шт: термін постачання 21-31 дні (днів) |
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| BSC205N10LSG |
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Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Description: N-CHANNEL POWER MOSFET
на замовлення 5751 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 662+ | 33.14 грн |
| BSC029N025SG |
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Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 50A, 10V
Power Dissipation (Max): 2.8W (Ta), 78W (Tc)
Vgs(th) (Max) @ Id: 2V @ 80µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 5090 pF @ 15 V
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 50A, 10V
Power Dissipation (Max): 2.8W (Ta), 78W (Tc)
Vgs(th) (Max) @ Id: 2V @ 80µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 5090 pF @ 15 V
на замовлення 8868 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 402+ | 58.12 грн |
| BSC886N03LSGATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 13A/65A TDSON
Description: MOSFET N-CH 30V 13A/65A TDSON
на замовлення 8585 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1205+ | 19.55 грн |
| BAS70E6327 |
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Виробник: Infineon Technologies
Description: BAS70 - HIGH SPEED SWITCHING, CL
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Voltage - DC Reverse (Vr) (Max): 70 V
Part Status: Active
Operating Temperature - Junction: 150°C
Supplier Device Package: PG-SOT23
Current - Average Rectified (Io): 70mA
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 100 ps
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
Description: BAS70 - HIGH SPEED SWITCHING, CL
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Voltage - DC Reverse (Vr) (Max): 70 V
Part Status: Active
Operating Temperature - Junction: 150°C
Supplier Device Package: PG-SOT23
Current - Average Rectified (Io): 70mA
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 100 ps
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
на замовлення 107857 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3893+ | 6.20 грн |
| IPL65R130CFD7AUMA1 |
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Виробник: Infineon Technologies
Description: COOLMOS CFD7 SUPERJUNCTION MOSFE
Input Capacitance (Ciss) (Max) @ Vds: 1694 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-VSON-4
Vgs(th) (Max) @ Id: 4.5V @ 420µA
Power Dissipation (Max): 127W (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 8.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-PowerTSFN
Packaging: Tape & Reel (TR)
Description: COOLMOS CFD7 SUPERJUNCTION MOSFE
Input Capacitance (Ciss) (Max) @ Vds: 1694 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-VSON-4
Vgs(th) (Max) @ Id: 4.5V @ 420µA
Power Dissipation (Max): 127W (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 8.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-PowerTSFN
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| IPL65R130CFD7AUMA1 |
![]() |
Виробник: Infineon Technologies
Description: COOLMOS CFD7 SUPERJUNCTION MOSFE
Input Capacitance (Ciss) (Max) @ Vds: 1694 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-VSON-4
Vgs(th) (Max) @ Id: 4.5V @ 420µA
Power Dissipation (Max): 127W (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 8.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-PowerTSFN
Packaging: Cut Tape (CT)
Description: COOLMOS CFD7 SUPERJUNCTION MOSFE
Input Capacitance (Ciss) (Max) @ Vds: 1694 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-VSON-4
Vgs(th) (Max) @ Id: 4.5V @ 420µA
Power Dissipation (Max): 127W (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 8.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-PowerTSFN
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| IPT039N15N5ATMA1 |
![]() |
Виробник: Infineon Technologies
Description: OPTIMOS 5 POWER MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 190A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 319W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 257µA
Supplier Device Package: PG-HSOF-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7700 pF @ 75 V
Description: OPTIMOS 5 POWER MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 190A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 319W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 257µA
Supplier Device Package: PG-HSOF-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7700 pF @ 75 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2000+ | 173.62 грн |
| IPT039N15N5ATMA1 |
![]() |
Виробник: Infineon Technologies
Description: OPTIMOS 5 POWER MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 190A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 319W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 257µA
Supplier Device Package: PG-HSOF-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7700 pF @ 75 V
Description: OPTIMOS 5 POWER MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 190A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 319W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 257µA
Supplier Device Package: PG-HSOF-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7700 pF @ 75 V
на замовлення 3898 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 488.97 грн |
| 10+ | 315.57 грн |
| 100+ | 227.12 грн |
| 500+ | 177.79 грн |
| 1000+ | 168.94 грн |
| BAT1706WE6327 |
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Виробник: Infineon Technologies
Description: DIODE SCHOTTKY 4V 150MW SOT-323
Packaging: Bulk
Package / Case: SC-70, SOT-323
Diode Type: Schottky - 1 Pair Common Anode
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.75pF @ 0V, 1MHz
Resistance @ If, F: 15Ohm @ 5mA, 10kHz
Voltage - Peak Reverse (Max): 4V
Supplier Device Package: SOT-323
Current - Max: 130 mA
Power Dissipation (Max): 150 mW
Description: DIODE SCHOTTKY 4V 150MW SOT-323
Packaging: Bulk
Package / Case: SC-70, SOT-323
Diode Type: Schottky - 1 Pair Common Anode
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.75pF @ 0V, 1MHz
Resistance @ If, F: 15Ohm @ 5mA, 10kHz
Voltage - Peak Reverse (Max): 4V
Supplier Device Package: SOT-323
Current - Max: 130 mA
Power Dissipation (Max): 150 mW
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2834+ | 7.23 грн |
| TT162N14KOFHPSA2 |
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Виробник: Infineon Technologies
Description: THYR / DIODE MODULE DK
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 125°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 5200A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 162 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Active
Current - On State (It (RMS)) (Max): 260 A
Voltage - Off State: 1.4 kV
Description: THYR / DIODE MODULE DK
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 125°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 5200A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 162 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Active
Current - On State (It (RMS)) (Max): 260 A
Voltage - Off State: 1.4 kV
на замовлення 8 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 10306.27 грн |
| CY25404ZXI012 |
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Виробник: Infineon Technologies
Description: IC CLOCK GENERATOR
DigiKey Programmable: Not Verified
Packaging: Bulk
Description: IC CLOCK GENERATOR
DigiKey Programmable: Not Verified
Packaging: Bulk
на замовлення 2172 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 25+ | 894.58 грн |
| CY25404ZXI011 |
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Виробник: Infineon Technologies
Description: IC CLOCK GENERATOR
DigiKey Programmable: Not Verified
Packaging: Bulk
Description: IC CLOCK GENERATOR
DigiKey Programmable: Not Verified
Packaging: Bulk
на замовлення 3053 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 33+ | 683.73 грн |
| BGT60LTR11AIPE6327XUMA2 |
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Виробник: Infineon Technologies
Description: IC RF TXRX+MCU ISM>1GHZ 42UF2BGA
Protocol: ISM
Part Status: Active
Serial Interfaces: SPI
RF Family/Standard: General ISM > 1GHz
Supplier Device Package: PG-UF2BGA-42
Voltage - Supply: 1.5V ~ 5V
Type: TxRx + MCU
Frequency: 60GHz
Mounting Type: Surface Mount
Package / Case: 42-BGA
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Description: IC RF TXRX+MCU ISM>1GHZ 42UF2BGA
Protocol: ISM
Part Status: Active
Serial Interfaces: SPI
RF Family/Standard: General ISM > 1GHz
Supplier Device Package: PG-UF2BGA-42
Voltage - Supply: 1.5V ~ 5V
Type: TxRx + MCU
Frequency: 60GHz
Mounting Type: Surface Mount
Package / Case: 42-BGA
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 429.27 грн |
| BGT60LTR11AIPE6327XUMA2 |
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Виробник: Infineon Technologies
Description: IC RF TXRX+MCU ISM>1GHZ 42UF2BGA
Protocol: ISM
Voltage - Supply: 1.5V ~ 5V
Type: TxRx + MCU
Frequency: 60GHz
Mounting Type: Surface Mount
Package / Case: 42-BGA
Packaging: Cut Tape (CT)
DigiKey Programmable: Not Verified
Part Status: Active
Serial Interfaces: SPI
RF Family/Standard: General ISM > 1GHz
Supplier Device Package: PG-UF2BGA-42
Description: IC RF TXRX+MCU ISM>1GHZ 42UF2BGA
Protocol: ISM
Voltage - Supply: 1.5V ~ 5V
Type: TxRx + MCU
Frequency: 60GHz
Mounting Type: Surface Mount
Package / Case: 42-BGA
Packaging: Cut Tape (CT)
DigiKey Programmable: Not Verified
Part Status: Active
Serial Interfaces: SPI
RF Family/Standard: General ISM > 1GHz
Supplier Device Package: PG-UF2BGA-42
на замовлення 7482 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 694.32 грн |
| 10+ | 580.55 грн |
| 25+ | 549.98 грн |
| 100+ | 476.76 грн |
| 250+ | 453.18 грн |
| 500+ | 436.54 грн |
| 1000+ | 413.97 грн |
| SHIELDBGT60LTR11AIPTOBO1 |
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Виробник: Infineon Technologies
Description: EVAL BOARD FOR BGT60LTR11AIP
Part Status: Active
Platform: Arduino MKR
Utilized IC / Part: BGT60LTR11AIP
Contents: Board(s)
Type: Sensor
Function: Radar
Packaging: Bulk
Description: EVAL BOARD FOR BGT60LTR11AIP
Part Status: Active
Platform: Arduino MKR
Utilized IC / Part: BGT60LTR11AIP
Contents: Board(s)
Type: Sensor
Function: Radar
Packaging: Bulk
на замовлення 13 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2277.45 грн |
| 10+ | 2188.03 грн |
| 94-3250 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 12A DIRECTFET
Input Capacitance (Ciss) (Max) @ Vds: 2270 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V
Supplier Device Package: DIRECTFET™ MQ
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 2.3W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 12A, 7V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 49A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric MQ
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 30V 12A DIRECTFET
Input Capacitance (Ciss) (Max) @ Vds: 2270 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V
Supplier Device Package: DIRECTFET™ MQ
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 2.3W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 12A, 7V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 49A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric MQ
Packaging: Tape & Reel (TR)
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| IRF6601 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 20V 26A DIRECTFET
Input Capacitance (Ciss) (Max) @ Vds: 3440 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DIRECTFET™ MT
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 3.6W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 26A, 10V
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 85A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric MT
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 20V 26A DIRECTFET
Input Capacitance (Ciss) (Max) @ Vds: 3440 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DIRECTFET™ MT
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 3.6W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 26A, 10V
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 85A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric MT
Packaging: Tape & Reel (TR)
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| IRF6602 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 20V 11A DIRECTFET
Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DIRECTFET™ MQ
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Power Dissipation (Max): 2.3W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 48A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric MQ
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 20V 11A DIRECTFET
Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DIRECTFET™ MQ
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Power Dissipation (Max): 2.3W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 48A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric MQ
Packaging: Tape & Reel (TR)
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| BCR521E6327 |
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Виробник: Infineon Technologies
Description: BIPOLAR DIGITAL TRANSISTOR
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 50mA, 5V
Supplier Device Package: PG-SOT23-3-3
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 330 mW
Frequency - Transition: 100 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 1 kOhms
Description: BIPOLAR DIGITAL TRANSISTOR
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 50mA, 5V
Supplier Device Package: PG-SOT23-3-3
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 330 mW
Frequency - Transition: 100 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 1 kOhms
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| DDB6U50N16W1RPB11BPSA1 |
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Виробник: Infineon Technologies
Description: IGBT MODULE 1200V 50A AG-EASY1B
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Single Chopper
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: AG-EASY1B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Cutoff (Max): 6.2 µA
Input Capacitance (Cies) @ Vce: 11.1 nF @ 25 V
Description: IGBT MODULE 1200V 50A AG-EASY1B
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Single Chopper
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: AG-EASY1B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Cutoff (Max): 6.2 µA
Input Capacitance (Cies) @ Vce: 11.1 nF @ 25 V
на замовлення 30 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2923.73 грн |
| 30+ | 1863.28 грн |
| TLS850C2TEV50BOARDTOBO1 |
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Виробник: Infineon Technologies
Description: TLS850C2TE V50 BOARD
Part Status: Active
Channels per IC: 1 - Single
Supplied Contents: Board(s)
Utilized IC / Part: TLS850C2TEV50
Board Type: Fully Populated
Regulator Type: Positive Fixed
Current - Output: 500mA
Voltage - Input: 3V ~ 40V
Voltage - Output: 5V
Packaging: Bulk
Description: TLS850C2TE V50 BOARD
Part Status: Active
Channels per IC: 1 - Single
Supplied Contents: Board(s)
Utilized IC / Part: TLS850C2TEV50
Board Type: Fully Populated
Regulator Type: Positive Fixed
Current - Output: 500mA
Voltage - Input: 3V ~ 40V
Voltage - Output: 5V
Packaging: Bulk
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 4172.10 грн |
| STT3300N18P76XPSA1 |
Виробник: Infineon Technologies
Description: THYR / DIODE MODULE DK BG-PS76-1
Packaging: Tray
Part Status: Active
Description: THYR / DIODE MODULE DK BG-PS76-1
Packaging: Tray
Part Status: Active
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| SAL-TC270TP-64F200NDC |
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Виробник: Infineon Technologies
Description: TC270 - RISC FLASH MICROCONTROLL
Packaging: Bulk
Part Status: Active
Description: TC270 - RISC FLASH MICROCONTROLL
Packaging: Bulk
Part Status: Active
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| TC277TP64F200SDCKXUMA3 |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 4MB FLASH 292LFBGA
Number of I/O: 169
Part Status: Active
Supplier Device Package: PG-LFBGA-292-6
Peripherals: DMA, POR, WDT
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I²C, LINbus, MSC, PSI5, QSPI, SENT
Voltage - Supply (Vcc/Vdd): 1.17V ~ 5.5V
Core Size: 32-Bit Tri-Core
Data Converters: A/D 60x12b SAR, Sigma-Delta
Core Processor: TriCore™
EEPROM Size: 64K x 8
Program Memory Type: FLASH
Oscillator Type: External
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 472K x 8
Program Memory Size: 4MB (4M x 8)
Speed: 200MHz
Mounting Type: Surface Mount
Package / Case: 292-LFBGA
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 4MB FLASH 292LFBGA
Number of I/O: 169
Part Status: Active
Supplier Device Package: PG-LFBGA-292-6
Peripherals: DMA, POR, WDT
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I²C, LINbus, MSC, PSI5, QSPI, SENT
Voltage - Supply (Vcc/Vdd): 1.17V ~ 5.5V
Core Size: 32-Bit Tri-Core
Data Converters: A/D 60x12b SAR, Sigma-Delta
Core Processor: TriCore™
EEPROM Size: 64K x 8
Program Memory Type: FLASH
Oscillator Type: External
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 472K x 8
Program Memory Size: 4MB (4M x 8)
Speed: 200MHz
Mounting Type: Surface Mount
Package / Case: 292-LFBGA
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 1000 шт
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| TC275TP64F200WDBKXUMA1 |
Виробник: Infineon Technologies
Description: IC MICROCONTROLLER
Description: IC MICROCONTROLLER
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| TC277TP64F200SCAKXUMA2 |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 4MB FLASH 292LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 472K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: TriCore™
Data Converters: A/D 60x12b SAR, Sigma-Delta
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 1.17V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I²C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, POR, WDT
Supplier Device Package: PG-LFBGA-292-6
Part Status: Active
Number of I/O: 169
Description: IC MCU 32BIT 4MB FLASH 292LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 472K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: TriCore™
Data Converters: A/D 60x12b SAR, Sigma-Delta
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 1.17V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I²C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, POR, WDT
Supplier Device Package: PG-LFBGA-292-6
Part Status: Active
Number of I/O: 169
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| TC275TP64F200WCAKXQMA1 |
Виробник: Infineon Technologies
Description: IC MICROCONTROLLER
Description: IC MICROCONTROLLER
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| SAK-TC275TP-64F200N DC |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 4MB FLASH 176LQFP
Packaging: Tape & Reel (TR)
Package / Case: 176-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 472K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: TriCore™
Data Converters: A/D 48x12b SAR, Sigma-Delta
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 1.17V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, POR, WDT
Supplier Device Package: PG-LQFP-176-22
Part Status: Active
Number of I/O: 169
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 4MB FLASH 176LQFP
Packaging: Tape & Reel (TR)
Package / Case: 176-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 472K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: TriCore™
Data Converters: A/D 48x12b SAR, Sigma-Delta
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 1.17V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, POR, WDT
Supplier Device Package: PG-LQFP-176-22
Part Status: Active
Number of I/O: 169
DigiKey Programmable: Not Verified
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| TC277TP64F200SDBKXUMA1 |
Виробник: Infineon Technologies
Description: IC MCU 32BIT 4MB FLASH 292LFBGA
Number of I/O: 169
Part Status: Active
Supplier Device Package: PG-LFBGA-292-6
Peripherals: DMA, POR, WDT
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I²C, LINbus, MSC, PSI5, QSPI, SENT
Voltage - Supply (Vcc/Vdd): 1.17V ~ 5.5V
Core Size: 32-Bit Tri-Core
Data Converters: A/D 60x12b SAR, Sigma-Delta
Core Processor: TriCore™
EEPROM Size: 64K x 8
Program Memory Type: FLASH
Oscillator Type: External
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 472K x 8
Program Memory Size: 4MB (4M x 8)
Speed: 200MHz
Mounting Type: Surface Mount
Package / Case: 292-LFBGA
Packaging: Tape & Reel (TR)
Description: IC MCU 32BIT 4MB FLASH 292LFBGA
Number of I/O: 169
Part Status: Active
Supplier Device Package: PG-LFBGA-292-6
Peripherals: DMA, POR, WDT
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I²C, LINbus, MSC, PSI5, QSPI, SENT
Voltage - Supply (Vcc/Vdd): 1.17V ~ 5.5V
Core Size: 32-Bit Tri-Core
Data Converters: A/D 60x12b SAR, Sigma-Delta
Core Processor: TriCore™
EEPROM Size: 64K x 8
Program Memory Type: FLASH
Oscillator Type: External
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 472K x 8
Program Memory Size: 4MB (4M x 8)
Speed: 200MHz
Mounting Type: Surface Mount
Package / Case: 292-LFBGA
Packaging: Tape & Reel (TR)
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| TC277TP64F200SDBKXUMA2 |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 4MB FLASH 292LFBGA
Number of I/O: 169
Part Status: Active
Supplier Device Package: PG-LFBGA-292-6
Peripherals: DMA, POR, WDT
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I²C, LINbus, MSC, PSI5, QSPI, SENT
Voltage - Supply (Vcc/Vdd): 1.17V ~ 5.5V
Core Size: 32-Bit Tri-Core
Data Converters: A/D 60x12b SAR, Sigma-Delta
Core Processor: TriCore™
EEPROM Size: 64K x 8
Program Memory Type: FLASH
Oscillator Type: External
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 472K x 8
Program Memory Size: 4MB (4M x 8)
Speed: 200MHz
Mounting Type: Surface Mount
Package / Case: 292-LFBGA
Packaging: Tape & Reel (TR)
Description: IC MCU 32BIT 4MB FLASH 292LFBGA
Number of I/O: 169
Part Status: Active
Supplier Device Package: PG-LFBGA-292-6
Peripherals: DMA, POR, WDT
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I²C, LINbus, MSC, PSI5, QSPI, SENT
Voltage - Supply (Vcc/Vdd): 1.17V ~ 5.5V
Core Size: 32-Bit Tri-Core
Data Converters: A/D 60x12b SAR, Sigma-Delta
Core Processor: TriCore™
EEPROM Size: 64K x 8
Program Memory Type: FLASH
Oscillator Type: External
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 472K x 8
Program Memory Size: 4MB (4M x 8)
Speed: 200MHz
Mounting Type: Surface Mount
Package / Case: 292-LFBGA
Packaging: Tape & Reel (TR)
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| SAL-TC270TP-64F200N DC |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 4MB FLASH DIE
Part Status: Active
Supplier Device Package: Die
Peripherals: DMA, POR, WDT
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I²C, LINbus, MSC, PSI5, QSPI, SENT
Voltage - Supply (Vcc/Vdd): 1.17V ~ 5.5V
Core Size: 32-Bit Tri-Core
Data Converters: A/D 60x12b SAR, Sigma-Delta
Core Processor: TriCore™
EEPROM Size: 64K x 8
Program Memory Type: FLASH
Oscillator Type: External
Operating Temperature: -40°C ~ 150°C (TA)
RAM Size: 472K x 8
Program Memory Size: 4MB (4M x 8)
Speed: 200MHz
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Tape & Reel (TR)
Description: IC MCU 32BIT 4MB FLASH DIE
Part Status: Active
Supplier Device Package: Die
Peripherals: DMA, POR, WDT
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I²C, LINbus, MSC, PSI5, QSPI, SENT
Voltage - Supply (Vcc/Vdd): 1.17V ~ 5.5V
Core Size: 32-Bit Tri-Core
Data Converters: A/D 60x12b SAR, Sigma-Delta
Core Processor: TriCore™
EEPROM Size: 64K x 8
Program Memory Type: FLASH
Oscillator Type: External
Operating Temperature: -40°C ~ 150°C (TA)
RAM Size: 472K x 8
Program Memory Size: 4MB (4M x 8)
Speed: 200MHz
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Tape & Reel (TR)
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| SAL-TC270TP-64F200 CA |
Виробник: Infineon Technologies
Description: IC MCU 32BIT 4MB FLASH DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 472K x 8
Operating Temperature: -40°C ~ 170°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: TriCore™
Data Converters: A/D 60x12b SAR, Sigma-Delta
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 1.17V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I²C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, POR, WDT
Supplier Device Package: Die
Part Status: Obsolete
Description: IC MCU 32BIT 4MB FLASH DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 472K x 8
Operating Temperature: -40°C ~ 170°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: TriCore™
Data Converters: A/D 60x12b SAR, Sigma-Delta
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 1.17V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I²C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, POR, WDT
Supplier Device Package: Die
Part Status: Obsolete
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| SAK-TC222L-12F133F AB |
Виробник: Infineon Technologies
Description: IC MCU 32BIT 1MB FLASH 80TQFP
Packaging: Tape & Reel (TR)
Package / Case: 80-TQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 133MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 96K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: TriCore™
Data Converters: A/D 24x12b SAR
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.17V ~ 5.5V
Connectivity: CANbus, FlexRay, LINbus, QSPI
Peripherals: DMA, WDT
Supplier Device Package: PG-TQFP-80-7
Part Status: Obsolete
Number of I/O: 59
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 1MB FLASH 80TQFP
Packaging: Tape & Reel (TR)
Package / Case: 80-TQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 133MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 96K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: TriCore™
Data Converters: A/D 24x12b SAR
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.17V ~ 5.5V
Connectivity: CANbus, FlexRay, LINbus, QSPI
Peripherals: DMA, WDT
Supplier Device Package: PG-TQFP-80-7
Part Status: Obsolete
Number of I/O: 59
DigiKey Programmable: Not Verified
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| TLE5109EVALKITTOBO2 |
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Виробник: Infineon Technologies
Description: TLE5109 EVAL KIT
Packaging: Bulk
Sensitivity: 0.1°
Voltage - Supply: 3V ~ 3.6V
Sensor Type: Magnetic, AMR (Anisotropic Magnetoresistive)
Utilized IC / Part: TLE5109, XMC4700
Supplied Contents: Board(s)
Embedded: Yes, MCU, 32-Bit
Sensing Range: 180°
Part Status: Active
Description: TLE5109 EVAL KIT
Packaging: Bulk
Sensitivity: 0.1°
Voltage - Supply: 3V ~ 3.6V
Sensor Type: Magnetic, AMR (Anisotropic Magnetoresistive)
Utilized IC / Part: TLE5109, XMC4700
Supplied Contents: Board(s)
Embedded: Yes, MCU, 32-Bit
Sensing Range: 180°
Part Status: Active
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 4074.46 грн |
| REFICL8800LED43WTOBO1 |
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Виробник: Infineon Technologies
Description: ICL8800 REF BOARD 43W
Part Status: Active
Outputs and Type: 1 Isolated Output
Supplied Contents: Board(s)
Utilized IC / Part: ICL8800
Voltage - Input: 90 ~ 305 VAC
Voltage - Output: 52V
Features: Dimmable
Packaging: Bulk
Description: ICL8800 REF BOARD 43W
Part Status: Active
Outputs and Type: 1 Isolated Output
Supplied Contents: Board(s)
Utilized IC / Part: ICL8800
Voltage - Input: 90 ~ 305 VAC
Voltage - Output: 52V
Features: Dimmable
Packaging: Bulk
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 3088.78 грн |
| EVALM1CM610N3TOBO2 |
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Виробник: Infineon Technologies
Description: EVAL BOARD FOR IKCM10H60GA
Packaging: Bulk
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: IKCM10H60GA
Supplied Contents: Board(s)
Primary Attributes: 110VAC ~ 240VAC Input Voltage
Secondary Attributes: On-Board LEDs
Embedded: Yes, MCU
Part Status: Active
Description: EVAL BOARD FOR IKCM10H60GA
Packaging: Bulk
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: IKCM10H60GA
Supplied Contents: Board(s)
Primary Attributes: 110VAC ~ 240VAC Input Voltage
Secondary Attributes: On-Board LEDs
Embedded: Yes, MCU
Part Status: Active
на замовлення 18 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 8143.50 грн |
| F3L11MR12W2M1C01BOMA1 |
Виробник: Infineon Technologies
Description: IC SIC MOSFET LOW POWER
Description: IC SIC MOSFET LOW POWER
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| KP216K1409 |
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Виробник: Infineon Technologies
Description: SENSOR 16.68PSIA 4.5V DSOF8
Part Status: Active
Port Style: No Port
Supplier Device Package: PG-DSOF-8-16
Applications: Board Mount
Voltage - Supply: 4.5V ~ 5.5V
Termination Style: SMD (SMT) Tab
Operating Temperature: -40°C ~ 140°C (TA)
Accuracy: ±0.65PSI (4.50kPa)
Pressure Type: Absolute
Operating Pressure: 2.18 ~ 16.68PSI (15 ~ 115kPa)
Output: 0.5 V ~ 4.5 V
Mounting Type: Surface Mount
Output Type: Analog Voltage
Package / Case: 8-SMD Module
Features: Amplified Output, Temperature Compensated
Packaging: Bulk
Description: SENSOR 16.68PSIA 4.5V DSOF8
Part Status: Active
Port Style: No Port
Supplier Device Package: PG-DSOF-8-16
Applications: Board Mount
Voltage - Supply: 4.5V ~ 5.5V
Termination Style: SMD (SMT) Tab
Operating Temperature: -40°C ~ 140°C (TA)
Accuracy: ±0.65PSI (4.50kPa)
Pressure Type: Absolute
Operating Pressure: 2.18 ~ 16.68PSI (15 ~ 115kPa)
Output: 0.5 V ~ 4.5 V
Mounting Type: Surface Mount
Output Type: Analog Voltage
Package / Case: 8-SMD Module
Features: Amplified Output, Temperature Compensated
Packaging: Bulk
на замовлення 20777 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 82+ | 269.18 грн |
| PEF24911HV2.1 |
Виробник: Infineon Technologies
Description: ISDN ECHOCANCELLER DFE
Packaging: Bulk
Part Status: Active
Description: ISDN ECHOCANCELLER DFE
Packaging: Bulk
Part Status: Active
на замовлення 176 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 1395.22 грн |
| PEF24911HV1.3 |
Виробник: Infineon Technologies
Description: ISDN ECHOCANCELLER DFE
Packaging: Bulk
Part Status: Active
Description: ISDN ECHOCANCELLER DFE
Packaging: Bulk
Part Status: Active
на замовлення 20098 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 1448.86 грн |
| PEB24911H |
Виробник: Infineon Technologies
Description: DFE-Q QUAD ISDN ECHOCANCELLER DI
Packaging: Bulk
Part Status: Active
Description: DFE-Q QUAD ISDN ECHOCANCELLER DI
Packaging: Bulk
Part Status: Active
на замовлення 484 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 1611.68 грн |
| TLE7259-3LE |
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Виробник: Infineon Technologies
Description: IC TRANSCEIVER FULL 1/1 TSON-8
Packaging: Bulk
Package / Case: 8-TDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Type: Transceiver
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 5.5V ~ 27V
Number of Drivers/Receivers: 1/1
Data Rate: 20kbps
Protocol: LIN
Supplier Device Package: PG-TSON-8-1
Receiver Hysteresis: 300 mV
Duplex: Full
Part Status: Active
Description: IC TRANSCEIVER FULL 1/1 TSON-8
Packaging: Bulk
Package / Case: 8-TDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Type: Transceiver
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 5.5V ~ 27V
Number of Drivers/Receivers: 1/1
Data Rate: 20kbps
Protocol: LIN
Supplier Device Package: PG-TSON-8-1
Receiver Hysteresis: 300 mV
Duplex: Full
Part Status: Active
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| TLD60982ESXUMA2 |
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Виробник: Infineon Technologies
Description: IC LED DRVR CTRLR PWM 1A 24TSDSO
Packaging: Tape & Reel (TR)
Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad
Voltage - Output: 70V
Mounting Type: Surface Mount
Number of Outputs: 2
Frequency: 100kHz ~ 500kHz
Type: DC DC Controller
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output / Channel: 1A
Internal Switch(s): No
Topology: Step-Up (Boost)
Supplier Device Package: PG-TSDSO-24
Dimming: PWM
Voltage - Supply (Min): 4.5V
Voltage - Supply (Max): 58V
Grade: Automotive
Part Status: Active
Description: IC LED DRVR CTRLR PWM 1A 24TSDSO
Packaging: Tape & Reel (TR)
Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad
Voltage - Output: 70V
Mounting Type: Surface Mount
Number of Outputs: 2
Frequency: 100kHz ~ 500kHz
Type: DC DC Controller
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output / Channel: 1A
Internal Switch(s): No
Topology: Step-Up (Boost)
Supplier Device Package: PG-TSDSO-24
Dimming: PWM
Voltage - Supply (Min): 4.5V
Voltage - Supply (Max): 58V
Grade: Automotive
Part Status: Active
товару немає в наявності
Мінімальне замовлення: 3000 шт
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| TLD60982ESXUMA2 |
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Виробник: Infineon Technologies
Description: IC LED DRVR CTRLR PWM 1A 24TSDSO
Part Status: Active
Voltage - Supply (Max): 58V
Voltage - Supply (Min): 4.5V
Dimming: PWM
Supplier Device Package: PG-TSDSO-24
Topology: Step-Up (Boost)
Internal Switch(s): No
Current - Output / Channel: 1A
Operating Temperature: -40°C ~ 150°C (TJ)
Type: DC DC Controller
Frequency: 100kHz ~ 500kHz
Number of Outputs: 2
Mounting Type: Surface Mount
Voltage - Output: 70V
Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad
Packaging: Cut Tape (CT)
Grade: Automotive
Description: IC LED DRVR CTRLR PWM 1A 24TSDSO
Part Status: Active
Voltage - Supply (Max): 58V
Voltage - Supply (Min): 4.5V
Dimming: PWM
Supplier Device Package: PG-TSDSO-24
Topology: Step-Up (Boost)
Internal Switch(s): No
Current - Output / Channel: 1A
Operating Temperature: -40°C ~ 150°C (TJ)
Type: DC DC Controller
Frequency: 100kHz ~ 500kHz
Number of Outputs: 2
Mounting Type: Surface Mount
Voltage - Output: 70V
Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad
Packaging: Cut Tape (CT)
Grade: Automotive
на замовлення 2700 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 236.35 грн |
| 10+ | 170.88 грн |
| 25+ | 156.61 грн |
| 100+ | 132.28 грн |
| 250+ | 125.27 грн |
| 500+ | 121.04 грн |
| 1000+ | 115.64 грн |
| IMZA120R014M1HXKSA1 |
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Виробник: Infineon Technologies
Description: SIC DISCRETE
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 127A (Tc)
Rds On (Max) @ Id, Vgs: 18.4mOhm @ 54.3A, 18V
Power Dissipation (Max): 455W (Tc)
Vgs(th) (Max) @ Id: 5.2V @ 23.4mA
Supplier Device Package: PG-TO247-4-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 4580 pF @ 25 V
Description: SIC DISCRETE
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 127A (Tc)
Rds On (Max) @ Id, Vgs: 18.4mOhm @ 54.3A, 18V
Power Dissipation (Max): 455W (Tc)
Vgs(th) (Max) @ Id: 5.2V @ 23.4mA
Supplier Device Package: PG-TO247-4-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 4580 pF @ 25 V
на замовлення 4331 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2040.33 грн |
| 30+ | 1271.84 грн |
| 120+ | 1136.36 грн |
| IMZA120R007M1HXKSA1 |
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Виробник: Infineon Technologies
Description: SIC DISCRETE
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 225A (Tc)
Rds On (Max) @ Id, Vgs: 9.9mOhm @ 108A, 18V
Power Dissipation (Max): 750W (Tc)
Vgs(th) (Max) @ Id: 5.2V @ 47mA
Supplier Device Package: PG-TO247-4-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 289 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 9170 pF @ 800 V
Description: SIC DISCRETE
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 225A (Tc)
Rds On (Max) @ Id, Vgs: 9.9mOhm @ 108A, 18V
Power Dissipation (Max): 750W (Tc)
Vgs(th) (Max) @ Id: 5.2V @ 47mA
Supplier Device Package: PG-TO247-4-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 289 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 9170 pF @ 800 V
на замовлення 1225 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 3371.62 грн |
| 30+ | 2202.03 грн |
| 120+ | 2141.80 грн |
| IMZA120R040M1HXKSA1 |
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Виробник: Infineon Technologies
Description: SIC DISCRETE
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 54.4mOhm @ 19.3A, 18V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 5.2V @ 8.3mA
Supplier Device Package: PG-TO247-4-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 800 V
Description: SIC DISCRETE
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 54.4mOhm @ 19.3A, 18V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 5.2V @ 8.3mA
Supplier Device Package: PG-TO247-4-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 800 V
на замовлення 239 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 895.02 грн |
| 30+ | 516.18 грн |
| 120+ | 449.29 грн |
| IMZA120R020M1HXKSA1 |
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Виробник: Infineon Technologies
Description: SIC DISCRETE
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 98A (Tc)
Rds On (Max) @ Id, Vgs: 26.9mOhm @ 41A, 18V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 5.2V @ 17.6mA
Supplier Device Package: PG-TO247-4-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 3460 pF @ 800 V
Description: SIC DISCRETE
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 98A (Tc)
Rds On (Max) @ Id, Vgs: 26.9mOhm @ 41A, 18V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 5.2V @ 17.6mA
Supplier Device Package: PG-TO247-4-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 3460 pF @ 800 V
на замовлення 666 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1359.96 грн |
| 30+ | 826.13 грн |
| 120+ | 772.41 грн |
| IMW120R007M1HXKSA1 |
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Виробник: Infineon Technologies
Description: SIC DISCRETE
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 225A (Tc)
Rds On (Max) @ Id, Vgs: 9.9mOhm @ 108A, 18V
Power Dissipation (Max): 750W (Tc)
Vgs(th) (Max) @ Id: 5.2V @ 47mA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 289 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 9170 pF @ 800 V
Description: SIC DISCRETE
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 225A (Tc)
Rds On (Max) @ Id, Vgs: 9.9mOhm @ 108A, 18V
Power Dissipation (Max): 750W (Tc)
Vgs(th) (Max) @ Id: 5.2V @ 47mA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 289 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 9170 pF @ 800 V
на замовлення 1058 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 3347.60 грн |
| 30+ | 2185.49 грн |
| 120+ | 2123.52 грн |
| BAS4002LE6327 |
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Виробник: Infineon Technologies
Description: DIODE SCHOTT 40V 120MA TSLP-2-1
Current - Reverse Leakage @ Vr: 1 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: 150°C
Supplier Device Package: PG-TSLP-2-1
Current - Average Rectified (Io): 120mA
Capacitance @ Vr, F: 3pF @ 0V, 1MHz
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SOD-882
Packaging: Bulk
Description: DIODE SCHOTT 40V 120MA TSLP-2-1
Current - Reverse Leakage @ Vr: 1 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: 150°C
Supplier Device Package: PG-TSLP-2-1
Current - Average Rectified (Io): 120mA
Capacitance @ Vr, F: 3pF @ 0V, 1MHz
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SOD-882
Packaging: Bulk
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3370+ | 6.42 грн |
| IPI147N12N3G |
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Виробник: Infineon Technologies
Description: IPI147N12 - 12V-300V N-CHANNEL P
Input Capacitance (Ciss) (Max) @ Vds: 3220 pF @ 60 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Drain to Source Voltage (Vdss): 120 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO262-3-1
Vgs(th) (Max) @ Id: 4V @ 61µA
Power Dissipation (Max): 107W (Tc)
Rds On (Max) @ Id, Vgs: 14.7mOhm @ 56A, 10V
Current - Continuous Drain (Id) @ 25°C: 56A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Packaging: Bulk
Description: IPI147N12 - 12V-300V N-CHANNEL P
Input Capacitance (Ciss) (Max) @ Vds: 3220 pF @ 60 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Drain to Source Voltage (Vdss): 120 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO262-3-1
Vgs(th) (Max) @ Id: 4V @ 61µA
Power Dissipation (Max): 107W (Tc)
Rds On (Max) @ Id, Vgs: 14.7mOhm @ 56A, 10V
Current - Continuous Drain (Id) @ 25°C: 56A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Packaging: Bulk
на замовлення 14603 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 307+ | 75.94 грн |
| BSO211PH |
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Виробник: Infineon Technologies
Description: MOSFET 2P-CH 20V 4A 532FCBGA
Mounting Type: Surface Mount
Package / Case: 532-BFBGA, FCBGA
Packaging: Bulk
Part Status: Active
Supplier Device Package: 532-FCBGA (23x23)
Vgs(th) (Max) @ Id: 1.2V @ 25µA
FET Feature: Logic Level Gate, 2.5V Drive
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
Rds On (Max) @ Id, Vgs: 67mOhm @ 4.6A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1095pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 1.6W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Description: MOSFET 2P-CH 20V 4A 532FCBGA
Mounting Type: Surface Mount
Package / Case: 532-BFBGA, FCBGA
Packaging: Bulk
Part Status: Active
Supplier Device Package: 532-FCBGA (23x23)
Vgs(th) (Max) @ Id: 1.2V @ 25µA
FET Feature: Logic Level Gate, 2.5V Drive
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
Rds On (Max) @ Id, Vgs: 67mOhm @ 4.6A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1095pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 1.6W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 903+ | 24.20 грн |
| PEB31666HV1.2D |
на замовлення 887 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 1993.06 грн |
| TLE4699EXUMA1 |
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Виробник: Infineon Technologies
Description: IC REG LINEAR 5V PG-SSOP-14-EP
Packaging: Cut Tape (CT)
Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 100 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-SSOP-14-EP
Voltage - Output (Min/Fixed): 5V
Control Features: Enable, Reset
Grade: Automotive
Part Status: Active
PSRR: 65dB (100Hz)
Voltage Dropout (Max): 0.35V @ 150mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 10 mA
Qualification: AEC-Q100
Description: IC REG LINEAR 5V PG-SSOP-14-EP
Packaging: Cut Tape (CT)
Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 100 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-SSOP-14-EP
Voltage - Output (Min/Fixed): 5V
Control Features: Enable, Reset
Grade: Automotive
Part Status: Active
PSRR: 65dB (100Hz)
Voltage Dropout (Max): 0.35V @ 150mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 10 mA
Qualification: AEC-Q100
на замовлення 838 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 119.34 грн |
| 10+ | 84.62 грн |
| 25+ | 77.04 грн |
| 100+ | 64.44 грн |
| 250+ | 60.69 грн |
| 500+ | 58.43 грн |
| FS300R120E4B0SA1 |
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Виробник: Infineon Technologies
Description: IGBT MODULE
Description: IGBT MODULE
товару немає в наявності
В кошику
од. на суму грн.
| FS300R17KE4BOSA1 |
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Виробник: Infineon Technologies
Description: IGBT MOD 1700V 375A 1800W
Description: IGBT MOD 1700V 375A 1800W
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 51802.58 грн |
| FS300R17KE4BOSA1 |
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Виробник: Infineon Technologies
Description: IGBT MOD 1700V 375A 1800W
Description: IGBT MOD 1700V 375A 1800W
товару немає в наявності
Мінімальне замовлення: 4 шт
В кошику
од. на суму грн.
| FS300R12KE4BOSA1 |
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Виробник: Infineon Technologies
Description: IGBT MOD 1200V 450A 1600W
Description: IGBT MOD 1200V 450A 1600W
на замовлення 8 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 37685.31 грн |
| FS300R12KE4BOSA1 |
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Виробник: Infineon Technologies
Description: IGBT MOD 1200V 450A 1600W
Description: IGBT MOD 1200V 450A 1600W
товару немає в наявності
Мінімальне замовлення: 4 шт
В кошику
од. на суму грн.
| FS300R17OE4PBOSA1 |
на замовлення 32 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 34688.74 грн |


































