Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (119554) > Сторінка 464 з 1993

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IKA08N65F5 IKA08N65F5 Infineon Technologies INFN-S-A0001300172-1.pdf?t.download=true&u=5oefqw Description: IKA08N65 - DISCRETE IGBT WITH AN
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 41 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 8A
Supplier Device Package: PG-TO220-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 10ns/116ns
Switching Energy: 70µJ (on), 20µJ (off)
Test Condition: 400V, 4A, 48Ohm, 15V
Gate Charge: 22 nC
Part Status: Active
Current - Collector (Ic) (Max): 10.8 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 31.2 W
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IAUA210N10S5N024AUMA1 IAUA210N10S5N024AUMA1 Infineon Technologies Infineon-IAUA210N10S5N024-DataSheet-v01_00-EN.pdf?fileId=5546d4627956d53f01798e39bd6b0b3b Description: MOSFET_(75V 120V( PG-HSOF-5
Packaging: Tape & Reel (TR)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 210A (Tj)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V
Power Dissipation (Max): 238W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 150µA
Supplier Device Package: PG-HSOF-5-4
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 119 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8696 pF @ 50 V
Qualification: AEC-Q101
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
2000+100.57 грн
Мінімальне замовлення: 2000
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IAUA250N08S5N018AUMA1 IAUA250N08S5N018AUMA1 Infineon Technologies Infineon-IAUA250N08S5N018-DataSheet-v01_00-EN.pdf?fileId=5546d4627956d53f01798e39d6fc0b41 Description: MOSFET_(75V 120V( PG-HSOF-5
Packaging: Tape & Reel (TR)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 250A (Tj)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 100A, 10V
Power Dissipation (Max): 238W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 150µA
Supplier Device Package: PG-HSOF-5-4
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8715 pF @ 40 V
Qualification: AEC-Q101
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CHL8214-07CRT CHL8214-07CRT Infineon Technologies CHL8203_12_13_14_PB_v1.6_8-28-13.pdf Description: IC REG BUCK 40VQFN
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TLE72732GV33XUMA1 TLE72732GV33XUMA1 Infineon Technologies Infineon-TLE7273-2-DS-v01_21-EN.pdf?fileId=5546d46259d9a4bf0159f9d710123eee Description: IC REG LIN 3.3V 180MA PG-DSO-14
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 180mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 36 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-DSO-14
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable, Reset, Watchdog
Grade: Automotive
Part Status: Active
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.5V @ 180mA
Protection Features: Over Current, Over Temperature, Short Circuit
Qualification: AEC-Q100
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2+234.17 грн
10+169.57 грн
25+155.56 грн
100+131.60 грн
250+124.73 грн
500+120.59 грн
1000+115.26 грн
Мінімальне замовлення: 2
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EVALM5IGBT7TOBO1 EVALM5IGBT7TOBO1 Infineon Technologies Infineon-UG-2021-28_EVAL-M5-IGBT7-UserManual-v01_00-EN.pdf?fileId=5546d4627aa5d4f5017aaf427d3a2289 Description: EVAL BOARD FOR M5-IGBT7
Packaging: Bulk
Function: Motor Controller/Driver
Type: Power Management
Utilized IC / Part: M5-IGBT7
Supplied Contents: Board(s), Cable(s)
Primary Attributes: 3-Phase Motor Control, IGBT Intelligent Power Module
Embedded: Yes, MCU, 32-Bit
Part Status: Active
Contents: Board(s), Cable(s)
Secondary Attributes: On-Board LEDs, Test Points
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
1+56617.64 грн
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ILD4001 1.0A BOARD ILD4001 1.0A BOARD Infineon Technologies fundamentals-of-power-semiconductors Description: BOARD EVAL ILD4001 1.0A
Features: Dimmable
Packaging: Box
Voltage - Input: 4.5V ~ 30V
Current - Output / Channel: 1A
Utilized IC / Part: ILD4001
Supplied Contents: Board(s)
Outputs and Type: 1, Non-Isolated
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
1+1394.09 грн
В кошику  од. на суму  грн.
BSM50GP60_B2 Infineon Technologies INFNS12611-1.pdf?t.download=true&u=5oefqw Description: IGBT MODULE
Packaging: Bulk
на замовлення 320 шт:
термін постачання 21-31 дні (днів)
6+4288.82 грн
Мінімальне замовлення: 6
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BSM50GP60GBOSA1 Infineon Technologies Description: IGBT MODULE 600V 70A 250W MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.55V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: Module
Part Status: Obsolete
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 250 W
Current - Collector Cutoff (Max): 500 µA
Input Capacitance (Cies) @ Vce: 2.8 nF @ 25 V
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BSM50GD170DLBOSA1 Infineon Technologies Description: IGBT MOD 1700V 100A 480W MOD
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 3.3V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 480 W
Current - Collector Cutoff (Max): 100 µA
Input Capacitance (Cies) @ Vce: 3.5 nF @ 25 V
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BSM50GB60DLCHOSA1 BSM50GB60DLCHOSA1 Infineon Technologies Infineon-BSM50GB60DLC-DS-v01_00-en_de.pdf?fileId=db3a304412b407950112b4349a4260c0 Description: IGBT MODULE 600V 75A 280W MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 280 W
Current - Collector Cutoff (Max): 500 µA
Input Capacitance (Cies) @ Vce: 2.2 nF @ 25 V
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BSM50GD60DLCBOSA1 Infineon Technologies Description: IGBT MODULE 600V 70A 250W MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Obsolete
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 250 W
Current - Collector Cutoff (Max): 500 µA
Input Capacitance (Cies) @ Vce: 2.2 nF @ 25 V
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BSM50GX120DN2BPSA1 Infineon Technologies Description: LOW POWER ECONO AG-ECONO2A-211
Packaging: Tray
Part Status: Last Time Buy
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IPN60R600PFD7SATMA1 IPN60R600PFD7SATMA1 Infineon Technologies Infineon-IPN60R600PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626eab8fbf016ed61c5b5c39ec Description: CONSUMER PG-SOT223-3
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 1.7A, 10V
Power Dissipation (Max): 7W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 80µA
Supplier Device Package: PG-SOT223-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 344 pF @ 400 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+19.63 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
IPN60R600PFD7SATMA1 IPN60R600PFD7SATMA1 Infineon Technologies Infineon-IPN60R600PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626eab8fbf016ed61c5b5c39ec Description: CONSUMER PG-SOT223-3
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 1.7A, 10V
Power Dissipation (Max): 7W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 80µA
Supplier Device Package: PG-SOT223-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 344 pF @ 400 V
на замовлення 4582 шт:
термін постачання 21-31 дні (днів)
4+79.62 грн
10+48.26 грн
100+31.74 грн
500+23.15 грн
1000+21.00 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
BTS70401EPZXUMA1 BTS70401EPZXUMA1 Infineon Technologies Infineon-BTS7040-1EPZ-DataSheet-v01_10-EN.pdf?fileId=5546d4626df6ee62016dfe5ad8af11c4 Description: PROFET PG-TSDSO-14
Packaging: Tape & Reel (TR)
Features: Slew Rate Controlled
Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 175°C (TJ)
Output Configuration: High Side
Rds On (Typ): 19mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 18V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 4.5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TDSO-14-11
Fault Protection: Over Current, Over Temperature, Over Voltage, Short Circuit
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
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BTS70401EPZXUMA1 BTS70401EPZXUMA1 Infineon Technologies Infineon-BTS7040-1EPZ-DataSheet-v01_10-EN.pdf?fileId=5546d4626df6ee62016dfe5ad8af11c4 Description: PROFET PG-TSDSO-14
Packaging: Cut Tape (CT)
Features: Slew Rate Controlled
Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 175°C (TJ)
Output Configuration: High Side
Rds On (Typ): 19mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 18V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 4.5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TDSO-14-11
Fault Protection: Over Current, Over Temperature, Over Voltage, Short Circuit
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2452 шт:
термін постачання 21-31 дні (днів)
4+85.08 грн
10+59.83 грн
25+54.15 грн
100+44.98 грн
250+42.20 грн
500+40.52 грн
1000+38.50 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
CY7C1312KV18-250BZC CY7C1312KV18-250BZC Infineon Technologies download Description: IC SRAM 18MBIT PAR 165FBGA
Packaging: Bulk
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 250 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 1M x 18
DigiKey Programmable: Not Verified
на замовлення 336 шт:
термін постачання 21-31 дні (днів)
11+2071.48 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
IPD90P03P404ATMA2 IPD90P03P404ATMA2 Infineon Technologies Infineon-IPD90P03P4-04-DataSheet-v01_01-EN.pdf?fileId=db3a30431ddc9372011e07ecafdb27ed Description: MOSFET P-CH 30V 90A TO252-31
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 90A, 10V
Power Dissipation (Max): 137W (Tc)
Vgs(th) (Max) @ Id: 4V @ 253µA
Supplier Device Package: PG-TO252-3-11
Grade: Automotive
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10300 pF @ 25 V
Qualification: AEC-Q101
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)
2500+52.74 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
IPD90P03P404ATMA2 IPD90P03P404ATMA2 Infineon Technologies Infineon-IPD90P03P4-04-DataSheet-v01_01-EN.pdf?fileId=db3a30431ddc9372011e07ecafdb27ed Description: MOSFET P-CH 30V 90A TO252-31
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 90A, 10V
Power Dissipation (Max): 137W (Tc)
Vgs(th) (Max) @ Id: 4V @ 253µA
Supplier Device Package: PG-TO252-3-11
Grade: Automotive
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10300 pF @ 25 V
Qualification: AEC-Q101
на замовлення 10986 шт:
термін постачання 21-31 дні (днів)
3+150.65 грн
10+105.46 грн
100+77.16 грн
500+59.51 грн
1000+58.34 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IPB80P03P405ATMA2 IPB80P03P405ATMA2 Infineon Technologies Infineon-IPx80P03P4-05-DS-v01_00-EN.pdf?fileId=db3a30431ddc9372011e07ef59f52807 Description: MOSFET_(20V 40V) PG-TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 80A, 10V
Power Dissipation (Max): 137W (Tc)
Vgs(th) (Max) @ Id: 4V @ 253µA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10300 pF @ 25 V
Qualification: AEC-Q101
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DEMOBOARDTLE4242GTOBO1 DEMOBOARDTLE4242GTOBO1 Infineon Technologies fundamentals-of-power-semiconductors Description: EVAL BOARD FOR TLE4242G
Packaging: Box
Voltage - Output: 6V ~ 8V
Voltage - Input: 8V ~ 16V
Current - Output / Channel: 370mA
Utilized IC / Part: TLE4242G
Supplied Contents: Board(s)
Outputs and Type: 1 Non-Isolated Output
Part Status: Active
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
1+3044.99 грн
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CY8C28433-24PVXIT CY8C28433-24PVXIT Infineon Technologies download Description: IC MCU 8BIT 16KB FLASH 28SSOP
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BGB 420 E6327 BGB 420 E6327 Infineon Technologies BGB420.pdf Description: IC AMP 802.15 100MHZ-3GHZ SOT343
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Frequency: 100MHz ~ 3GHz
RF Type: 802.15/Bluetooth, ISM, WLAN, GSM, GPS, DCS, UMTS
Voltage - Supply: 3.5V
Gain: 16dB
Current - Supply: 30mA
Noise Figure: 2dB
P1dB: 10dBm
Test Frequency: 1.8GHz
Supplier Device Package: PG-SOT343-3D
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FZ1000R33HL3B60BOSA1 Infineon Technologies Description: IHV IHM T XHP 3 3-6 5K AG-IHVB13
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Dual Brake Chopper
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.85V @ 15V, 1kA
NTC Thermistor: No
Supplier Device Package: AG-IHVB130-3
IGBT Type: Trench Field Stop
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 1000 A
Voltage - Collector Emitter Breakdown (Max): 3300 V
Power - Max: 1.6 MW
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 190 nF @ 25 V
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CY9BF518SPMC-GK7E1 CY9BF518SPMC-GK7E1 Infineon Technologies Infineon-CY9B510T_Series_32-Bit_Arm_Cortex_-M3_FM3_Microcontroller-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edeaf65639f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MCU 32BIT 1MB FLASH 144LQFP
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 144MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 24x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I²C, LINbus, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 144-LQFP (20x20)
Part Status: Obsolete
Number of I/O: 122
DigiKey Programmable: Not Verified
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CY9BF516NBGL-GE1 CY9BF516NBGL-GE1 Infineon Technologies Infineon-CY9B510R_Series_32-bit_Arm_Cortex_-M3_FM3_Microcontroller-DataSheet-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edfdf72653c&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MCU 32BIT 512KB FLSH 112PFBGA
Packaging: Tray
Package / Case: 112-LFBGA
Mounting Type: Surface Mount
Speed: 144MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 16x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I²C, LINbus, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 112-PFBGA (10x10)
Part Status: Obsolete
Number of I/O: 83
DigiKey Programmable: Not Verified
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IPI032N06N3GE8214AKSA1 Infineon Technologies Description: MOSFET N-CH 60V TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 100A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 4V @ 118µA
Supplier Device Package: PG-TO262-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 30 V
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BSL316CL6327 BSL316CL6327 Infineon Technologies INFNS15767-1.pdf?t.download=true&u=5oefqw Description: P-CHANNEL MOSFET
Packaging: Bulk
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 1.4A, 1.5A
Input Capacitance (Ciss) (Max) @ Vds: 94pF @ 15V
Rds On (Max) @ Id, Vgs: 160mOhm @ 1.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 3.7µA
Supplier Device Package: PG-TSOP6-6
Part Status: Active
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IPL60R185C7AUMA1 IPL60R185C7AUMA1 Infineon Technologies Infineon-IPL60R185C7-DS-v02_01-EN.pdf?fileId=5546d462518ffd850151b42d65c55913 Description: MOSFET N-CH 600V 13A 4VSON
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 5.3A, 10V
Power Dissipation (Max): 77W (Tc)
Vgs(th) (Max) @ Id: 4V @ 260µA
Supplier Device Package: PG-VSON-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 400 V
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IPD70P04P4L08ATMA2 IPD70P04P4L08ATMA2 Infineon Technologies Infineon-IPD70P04P4L-08-DataSheet-v01_02-EN.pdf?fileId=db3a30432f69f146012f78225bd32dbf Description: MOSFET P-CH 40V 70A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 70A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 120µA
Supplier Device Package: PG-TO252-3-313
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5430 pF @ 25 V
Qualification: AEC-Q101
на замовлення 10096 шт:
термін постачання 21-31 дні (днів)
4+103.03 грн
10+75.02 грн
100+55.18 грн
500+41.88 грн
1000+38.67 грн
Мінімальне замовлення: 4
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IPD70P04P4L08ATMA1 IPD70P04P4L08ATMA1 Infineon Technologies Infineon-IPD70P04P4L_08-DS-v01_01-en.pdf?fileId=db3a30432f69f146012f78225bd32dbf Description: MOSFET P-CH 40V 70A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 70A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 120µA
Supplier Device Package: PG-TO252-3-313
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5430 pF @ 25 V
Qualification: AEC-Q101
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+39.97 грн
Мінімальне замовлення: 2500
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IPD70P04P4L08ATMA1 IPD70P04P4L08ATMA1 Infineon Technologies Infineon-IPD70P04P4L_08-DS-v01_01-en.pdf?fileId=db3a30432f69f146012f78225bd32dbf Description: MOSFET P-CH 40V 70A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 70A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 120µA
Supplier Device Package: PG-TO252-3-313
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5430 pF @ 25 V
Qualification: AEC-Q101
на замовлення 4998 шт:
термін постачання 21-31 дні (днів)
3+142.06 грн
10+87.04 грн
100+58.73 грн
500+43.74 грн
1000+40.08 грн
Мінімальне замовлення: 3
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FD300R17KE4PHOSA1 FD300R17KE4PHOSA1 Infineon Technologies Infineon-FD300R17KE4P-DS-v02_00-EN.pdf?fileId=5546d46269e1c019016a54c865b65577 Description: IGBT MODULE 1700V 300A AG62MM-1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Chopper
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 300A
NTC Thermistor: No
Supplier Device Package: AG-62MM-1
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 300 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Cutoff (Max): 1 mA
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F3L200R07W2S5B11BOMA1 F3L200R07W2S5B11BOMA1 Infineon Technologies Description: LOW POWER EASY AG-EASY2B-2
Packaging: Bulk
на замовлення 150 шт:
термін постачання 21-31 дні (днів)
5+4699.17 грн
Мінімальне замовлення: 5
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F3L200R07W2S5B11BOMA1 F3L200R07W2S5B11BOMA1 Infineon Technologies Description: LOW POWER EASY AG-EASY2B-2
Packaging: Tray
на замовлення 15 шт:
термін постачання 21-31 дні (днів)
1+5328.15 грн
15+4650.05 грн
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BTS133TCAUMA1 BTS133TCAUMA1 Infineon Technologies Description: IC PWR SWITCH
Features: Auto Restart, Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 40mOhm
Input Type: Non-Inverting
Voltage - Load: 60V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 7A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO263-3-2
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, Short Circuit
Part Status: Not For New Designs
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BTS500701TMAATMA1 BTS500701TMAATMA1 Infineon Technologies BTS50070-1TMA_Sept2008.pdf Description: IC PWR SWITCH N-CHAN 1:1 TO220-7
Features: Auto Restart
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 7mOhm
Input Type: Non-Inverting
Voltage - Load: 5.5V ~ 30V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 12A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO220-7-4
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
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BTS500701TMBAKSA1 BTS500701TMBAKSA1 Infineon Technologies BTS50070-1TMB_Sept2008.pdf Description: IC PWR SWITCH N-CHAN 1:1 TO220-7
Features: Auto Restart
Packaging: Tube
Package / Case: TO-220-7
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 7mOhm
Input Type: Non-Inverting
Voltage - Load: 5.5V ~ 30V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 12A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO220-7-12
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
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BCR 196T E6327 BCR 196T E6327 Infineon Technologies BCR196%20%282006%29.pdf Description: TRANS PREBIAS PNP 50V 0.07A SC75
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V
Supplier Device Package: PG-SC75-3D
Current - Collector (Ic) (Max): 70 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Resistors Included: R1 and R2
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BCR 196F E6327 BCR 196F E6327 Infineon Technologies bcr196series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a37301144048156b02db Description: TRANS PREBIAS PNP 50V TSFP-3
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V
Supplier Device Package: PG-TSFP-3
Current - Collector (Ic) (Max): 70 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Resistors Included: R1 and R2
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BCR 196L3 E6327 BCR 196L3 E6327 Infineon Technologies BCR196%20%282006%29.pdf Description: TRANS PREBIAS PNP 50V TSLP-3
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V
Supplier Device Package: PG-TSLP-3-4
Current - Collector (Ic) (Max): 70 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Resistors Included: R1 and R2
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EVALM13645ATOBO2 EVALM13645ATOBO2 Infineon Technologies Infineon-AN2016-15_EVAL-M1-36-45A_User_Manual-UM-v01_02-EN.pdf?fileId=5546d4625cc9456a015d2b0ce2497e69 Description: EVAL BOARD FOR IRSM836-045MA
Packaging: Bulk
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: IRSM836-045MA
Supplied Contents: Board(s)
Primary Attributes: 165VAC ~ 265VAC
Secondary Attributes: On-Board LEDs, Test Points
Embedded: No
Part Status: Active
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BSM100GB120DN2K Infineon Technologies EUPCS02845-1.pdf?t.download=true&u=5oefqw Description: INSULATED GATE BIPOLAR TRANSISTO
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IDC05S60CEX1SA1 Infineon Technologies IDC05S60CE.pdf Description: DIODE SIC 600V 5A SAWN WAFER
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SIDC07D60F6X1SA2 Infineon Technologies SIDC07D60F6_L4364M.pdf?folderId=db3a304412b407950112b435f2e4642a&fileId=db3a304412b407950112b435f361642b Description: DIODE GP 600V 22.5A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 22.5A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 22.5 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
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SIDC03D60F6X1SA2 Infineon Technologies SIDC03D60F6_L4324M.pdf?folderId=db3a304412b407950112b435eacc6416&fileId=db3a304412b407950112b435eb496417 Description: DIODE GP 600V 6A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 6 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
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SIDC02D60C6X1SA4 Infineon Technologies SIDC02D60C6.pdf Description: DIODE GP 600V 6A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 6 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
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SIDC03D120H6X1SA3 Infineon Technologies SIDC03D120H6.pdf Description: DIODE GP 1.2KV 3A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
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SIDC03D60C6X1SA2 Infineon Technologies SIDC03D60C6.pdf Description: DIODE GP 600V 10A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 10 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
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SIDC05D60C6X1SA2 Infineon Technologies SIDC05D60C6.pdf Description: DIODE GP 600V 15A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 15 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
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SIDC02D60F6X1SA1 Infineon Technologies SIDC02D60F6_L4314M.pdf?folderId=db3a304314dca3890115122467810c94&fileId=db3a3043271faefd0127718d00506e36 Description: DIODE GP 600V 3A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
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SIDC02D60C8F1SA1 Infineon Technologies Description: DIODE SWITCHING 600V 6A WAFER
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SIDC07D60F6X7SA1 Infineon Technologies Description: DIODE SWITCHING 600V WAFER
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SIDC07D60F6X1SA5 Infineon Technologies SIDC07D60F6_ed2.1_9-3-10.pdf Description: DIODE SWITCHING 600V WAFER
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SIDC03D120F6X1SA1 Infineon Technologies SIDC03D120F6_L4375M.pdf?folderId=db3a304412b407950112b439c4b16eaf&fileId=db3a304412b407950112b439c53d6eb0 Description: DIODE GP 1.2KV 2A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 2 A
Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
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SIDC07D60E6X1SA1 Infineon Technologies Infineon-SIDC07D60E6_L4293M-DS-v01_00-en.pdf?fileId=db3a30433e30e4bf013e402a6d9f1096 Description: DIODE GP 600V 15A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 15 A
Current - Reverse Leakage @ Vr: 250 µA @ 600 V
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SIDC03D60C8X7SA2 Infineon Technologies Description: DIODE SWITCHING 600V 10A WAFER
товару немає в наявності
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BCR166E6393HTSA1 BCR166E6393HTSA1 Infineon Technologies SIEMD095-687.pdf?t.download=true&u=5oefqw Description: TRANS PREBIAS
Packaging: Bulk
Part Status: Active
на замовлення 182000 шт:
термін постачання 21-31 дні (днів)
8955+2.02 грн
Мінімальне замовлення: 8955
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MB96F646RBPMC-GS-107JAE2 MB96F646RBPMC-GS-107JAE2 Infineon Technologies Description: IC MCU 16BIT 288KB FLASH 100LQFP
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IKA08N65F5 INFN-S-A0001300172-1.pdf?t.download=true&u=5oefqw
IKA08N65F5
Виробник: Infineon Technologies
Description: IKA08N65 - DISCRETE IGBT WITH AN
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 41 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 8A
Supplier Device Package: PG-TO220-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 10ns/116ns
Switching Energy: 70µJ (on), 20µJ (off)
Test Condition: 400V, 4A, 48Ohm, 15V
Gate Charge: 22 nC
Part Status: Active
Current - Collector (Ic) (Max): 10.8 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 31.2 W
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IAUA210N10S5N024AUMA1 Infineon-IAUA210N10S5N024-DataSheet-v01_00-EN.pdf?fileId=5546d4627956d53f01798e39bd6b0b3b
IAUA210N10S5N024AUMA1
Виробник: Infineon Technologies
Description: MOSFET_(75V 120V( PG-HSOF-5
Packaging: Tape & Reel (TR)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 210A (Tj)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V
Power Dissipation (Max): 238W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 150µA
Supplier Device Package: PG-HSOF-5-4
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 119 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8696 pF @ 50 V
Qualification: AEC-Q101
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2000+100.57 грн
Мінімальне замовлення: 2000
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IAUA250N08S5N018AUMA1 Infineon-IAUA250N08S5N018-DataSheet-v01_00-EN.pdf?fileId=5546d4627956d53f01798e39d6fc0b41
IAUA250N08S5N018AUMA1
Виробник: Infineon Technologies
Description: MOSFET_(75V 120V( PG-HSOF-5
Packaging: Tape & Reel (TR)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 250A (Tj)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 100A, 10V
Power Dissipation (Max): 238W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 150µA
Supplier Device Package: PG-HSOF-5-4
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8715 pF @ 40 V
Qualification: AEC-Q101
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CHL8214-07CRT CHL8203_12_13_14_PB_v1.6_8-28-13.pdf
CHL8214-07CRT
Виробник: Infineon Technologies
Description: IC REG BUCK 40VQFN
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TLE72732GV33XUMA1 Infineon-TLE7273-2-DS-v01_21-EN.pdf?fileId=5546d46259d9a4bf0159f9d710123eee
TLE72732GV33XUMA1
Виробник: Infineon Technologies
Description: IC REG LIN 3.3V 180MA PG-DSO-14
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 180mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 36 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-DSO-14
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable, Reset, Watchdog
Grade: Automotive
Part Status: Active
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.5V @ 180mA
Protection Features: Over Current, Over Temperature, Short Circuit
Qualification: AEC-Q100
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+234.17 грн
10+169.57 грн
25+155.56 грн
100+131.60 грн
250+124.73 грн
500+120.59 грн
1000+115.26 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
EVALM5IGBT7TOBO1 Infineon-UG-2021-28_EVAL-M5-IGBT7-UserManual-v01_00-EN.pdf?fileId=5546d4627aa5d4f5017aaf427d3a2289
EVALM5IGBT7TOBO1
Виробник: Infineon Technologies
Description: EVAL BOARD FOR M5-IGBT7
Packaging: Bulk
Function: Motor Controller/Driver
Type: Power Management
Utilized IC / Part: M5-IGBT7
Supplied Contents: Board(s), Cable(s)
Primary Attributes: 3-Phase Motor Control, IGBT Intelligent Power Module
Embedded: Yes, MCU, 32-Bit
Part Status: Active
Contents: Board(s), Cable(s)
Secondary Attributes: On-Board LEDs, Test Points
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+56617.64 грн
В кошику  од. на суму  грн.
ILD4001 1.0A BOARD fundamentals-of-power-semiconductors
ILD4001 1.0A BOARD
Виробник: Infineon Technologies
Description: BOARD EVAL ILD4001 1.0A
Features: Dimmable
Packaging: Box
Voltage - Input: 4.5V ~ 30V
Current - Output / Channel: 1A
Utilized IC / Part: ILD4001
Supplied Contents: Board(s)
Outputs and Type: 1, Non-Isolated
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1394.09 грн
В кошику  од. на суму  грн.
BSM50GP60_B2 INFNS12611-1.pdf?t.download=true&u=5oefqw
Виробник: Infineon Technologies
Description: IGBT MODULE
Packaging: Bulk
на замовлення 320 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6+4288.82 грн
Мінімальне замовлення: 6
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BSM50GP60GBOSA1
Виробник: Infineon Technologies
Description: IGBT MODULE 600V 70A 250W MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.55V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: Module
Part Status: Obsolete
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 250 W
Current - Collector Cutoff (Max): 500 µA
Input Capacitance (Cies) @ Vce: 2.8 nF @ 25 V
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BSM50GD170DLBOSA1
Виробник: Infineon Technologies
Description: IGBT MOD 1700V 100A 480W MOD
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 3.3V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 480 W
Current - Collector Cutoff (Max): 100 µA
Input Capacitance (Cies) @ Vce: 3.5 nF @ 25 V
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BSM50GB60DLCHOSA1 Infineon-BSM50GB60DLC-DS-v01_00-en_de.pdf?fileId=db3a304412b407950112b4349a4260c0
BSM50GB60DLCHOSA1
Виробник: Infineon Technologies
Description: IGBT MODULE 600V 75A 280W MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 280 W
Current - Collector Cutoff (Max): 500 µA
Input Capacitance (Cies) @ Vce: 2.2 nF @ 25 V
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BSM50GD60DLCBOSA1
Виробник: Infineon Technologies
Description: IGBT MODULE 600V 70A 250W MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Obsolete
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 250 W
Current - Collector Cutoff (Max): 500 µA
Input Capacitance (Cies) @ Vce: 2.2 nF @ 25 V
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BSM50GX120DN2BPSA1
Виробник: Infineon Technologies
Description: LOW POWER ECONO AG-ECONO2A-211
Packaging: Tray
Part Status: Last Time Buy
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IPN60R600PFD7SATMA1 Infineon-IPN60R600PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626eab8fbf016ed61c5b5c39ec
IPN60R600PFD7SATMA1
Виробник: Infineon Technologies
Description: CONSUMER PG-SOT223-3
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 1.7A, 10V
Power Dissipation (Max): 7W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 80µA
Supplier Device Package: PG-SOT223-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 344 pF @ 400 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+19.63 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
IPN60R600PFD7SATMA1 Infineon-IPN60R600PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626eab8fbf016ed61c5b5c39ec
IPN60R600PFD7SATMA1
Виробник: Infineon Technologies
Description: CONSUMER PG-SOT223-3
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 1.7A, 10V
Power Dissipation (Max): 7W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 80µA
Supplier Device Package: PG-SOT223-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 344 pF @ 400 V
на замовлення 4582 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+79.62 грн
10+48.26 грн
100+31.74 грн
500+23.15 грн
1000+21.00 грн
Мінімальне замовлення: 4
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BTS70401EPZXUMA1 Infineon-BTS7040-1EPZ-DataSheet-v01_10-EN.pdf?fileId=5546d4626df6ee62016dfe5ad8af11c4
BTS70401EPZXUMA1
Виробник: Infineon Technologies
Description: PROFET PG-TSDSO-14
Packaging: Tape & Reel (TR)
Features: Slew Rate Controlled
Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 175°C (TJ)
Output Configuration: High Side
Rds On (Typ): 19mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 18V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 4.5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TDSO-14-11
Fault Protection: Over Current, Over Temperature, Over Voltage, Short Circuit
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
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BTS70401EPZXUMA1 Infineon-BTS7040-1EPZ-DataSheet-v01_10-EN.pdf?fileId=5546d4626df6ee62016dfe5ad8af11c4
BTS70401EPZXUMA1
Виробник: Infineon Technologies
Description: PROFET PG-TSDSO-14
Packaging: Cut Tape (CT)
Features: Slew Rate Controlled
Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 175°C (TJ)
Output Configuration: High Side
Rds On (Typ): 19mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 18V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 4.5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TDSO-14-11
Fault Protection: Over Current, Over Temperature, Over Voltage, Short Circuit
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2452 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+85.08 грн
10+59.83 грн
25+54.15 грн
100+44.98 грн
250+42.20 грн
500+40.52 грн
1000+38.50 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
CY7C1312KV18-250BZC download
CY7C1312KV18-250BZC
Виробник: Infineon Technologies
Description: IC SRAM 18MBIT PAR 165FBGA
Packaging: Bulk
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 250 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 1M x 18
DigiKey Programmable: Not Verified
на замовлення 336 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
11+2071.48 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
IPD90P03P404ATMA2 Infineon-IPD90P03P4-04-DataSheet-v01_01-EN.pdf?fileId=db3a30431ddc9372011e07ecafdb27ed
IPD90P03P404ATMA2
Виробник: Infineon Technologies
Description: MOSFET P-CH 30V 90A TO252-31
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 90A, 10V
Power Dissipation (Max): 137W (Tc)
Vgs(th) (Max) @ Id: 4V @ 253µA
Supplier Device Package: PG-TO252-3-11
Grade: Automotive
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10300 pF @ 25 V
Qualification: AEC-Q101
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+52.74 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
IPD90P03P404ATMA2 Infineon-IPD90P03P4-04-DataSheet-v01_01-EN.pdf?fileId=db3a30431ddc9372011e07ecafdb27ed
IPD90P03P404ATMA2
Виробник: Infineon Technologies
Description: MOSFET P-CH 30V 90A TO252-31
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 90A, 10V
Power Dissipation (Max): 137W (Tc)
Vgs(th) (Max) @ Id: 4V @ 253µA
Supplier Device Package: PG-TO252-3-11
Grade: Automotive
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10300 pF @ 25 V
Qualification: AEC-Q101
на замовлення 10986 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+150.65 грн
10+105.46 грн
100+77.16 грн
500+59.51 грн
1000+58.34 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IPB80P03P405ATMA2 Infineon-IPx80P03P4-05-DS-v01_00-EN.pdf?fileId=db3a30431ddc9372011e07ef59f52807
IPB80P03P405ATMA2
Виробник: Infineon Technologies
Description: MOSFET_(20V 40V) PG-TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 80A, 10V
Power Dissipation (Max): 137W (Tc)
Vgs(th) (Max) @ Id: 4V @ 253µA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10300 pF @ 25 V
Qualification: AEC-Q101
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DEMOBOARDTLE4242GTOBO1 fundamentals-of-power-semiconductors
DEMOBOARDTLE4242GTOBO1
Виробник: Infineon Technologies
Description: EVAL BOARD FOR TLE4242G
Packaging: Box
Voltage - Output: 6V ~ 8V
Voltage - Input: 8V ~ 16V
Current - Output / Channel: 370mA
Utilized IC / Part: TLE4242G
Supplied Contents: Board(s)
Outputs and Type: 1 Non-Isolated Output
Part Status: Active
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+3044.99 грн
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CY8C28433-24PVXIT download
CY8C28433-24PVXIT
Виробник: Infineon Technologies
Description: IC MCU 8BIT 16KB FLASH 28SSOP
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BGB 420 E6327 BGB420.pdf
BGB 420 E6327
Виробник: Infineon Technologies
Description: IC AMP 802.15 100MHZ-3GHZ SOT343
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Frequency: 100MHz ~ 3GHz
RF Type: 802.15/Bluetooth, ISM, WLAN, GSM, GPS, DCS, UMTS
Voltage - Supply: 3.5V
Gain: 16dB
Current - Supply: 30mA
Noise Figure: 2dB
P1dB: 10dBm
Test Frequency: 1.8GHz
Supplier Device Package: PG-SOT343-3D
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FZ1000R33HL3B60BOSA1
Виробник: Infineon Technologies
Description: IHV IHM T XHP 3 3-6 5K AG-IHVB13
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Dual Brake Chopper
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.85V @ 15V, 1kA
NTC Thermistor: No
Supplier Device Package: AG-IHVB130-3
IGBT Type: Trench Field Stop
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 1000 A
Voltage - Collector Emitter Breakdown (Max): 3300 V
Power - Max: 1.6 MW
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 190 nF @ 25 V
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CY9BF518SPMC-GK7E1 Infineon-CY9B510T_Series_32-Bit_Arm_Cortex_-M3_FM3_Microcontroller-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edeaf65639f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY9BF518SPMC-GK7E1
Виробник: Infineon Technologies
Description: IC MCU 32BIT 1MB FLASH 144LQFP
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 144MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 24x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I²C, LINbus, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 144-LQFP (20x20)
Part Status: Obsolete
Number of I/O: 122
DigiKey Programmable: Not Verified
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CY9BF516NBGL-GE1 Infineon-CY9B510R_Series_32-bit_Arm_Cortex_-M3_FM3_Microcontroller-DataSheet-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edfdf72653c&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY9BF516NBGL-GE1
Виробник: Infineon Technologies
Description: IC MCU 32BIT 512KB FLSH 112PFBGA
Packaging: Tray
Package / Case: 112-LFBGA
Mounting Type: Surface Mount
Speed: 144MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 16x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I²C, LINbus, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 112-PFBGA (10x10)
Part Status: Obsolete
Number of I/O: 83
DigiKey Programmable: Not Verified
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IPI032N06N3GE8214AKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 100A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 4V @ 118µA
Supplier Device Package: PG-TO262-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 30 V
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BSL316CL6327 INFNS15767-1.pdf?t.download=true&u=5oefqw
BSL316CL6327
Виробник: Infineon Technologies
Description: P-CHANNEL MOSFET
Packaging: Bulk
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 1.4A, 1.5A
Input Capacitance (Ciss) (Max) @ Vds: 94pF @ 15V
Rds On (Max) @ Id, Vgs: 160mOhm @ 1.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 3.7µA
Supplier Device Package: PG-TSOP6-6
Part Status: Active
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IPL60R185C7AUMA1 Infineon-IPL60R185C7-DS-v02_01-EN.pdf?fileId=5546d462518ffd850151b42d65c55913
IPL60R185C7AUMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 13A 4VSON
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 5.3A, 10V
Power Dissipation (Max): 77W (Tc)
Vgs(th) (Max) @ Id: 4V @ 260µA
Supplier Device Package: PG-VSON-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 400 V
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IPD70P04P4L08ATMA2 Infineon-IPD70P04P4L-08-DataSheet-v01_02-EN.pdf?fileId=db3a30432f69f146012f78225bd32dbf
IPD70P04P4L08ATMA2
Виробник: Infineon Technologies
Description: MOSFET P-CH 40V 70A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 70A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 120µA
Supplier Device Package: PG-TO252-3-313
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5430 pF @ 25 V
Qualification: AEC-Q101
на замовлення 10096 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+103.03 грн
10+75.02 грн
100+55.18 грн
500+41.88 грн
1000+38.67 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IPD70P04P4L08ATMA1 Infineon-IPD70P04P4L_08-DS-v01_01-en.pdf?fileId=db3a30432f69f146012f78225bd32dbf
IPD70P04P4L08ATMA1
Виробник: Infineon Technologies
Description: MOSFET P-CH 40V 70A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 70A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 120µA
Supplier Device Package: PG-TO252-3-313
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5430 pF @ 25 V
Qualification: AEC-Q101
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+39.97 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
IPD70P04P4L08ATMA1 Infineon-IPD70P04P4L_08-DS-v01_01-en.pdf?fileId=db3a30432f69f146012f78225bd32dbf
IPD70P04P4L08ATMA1
Виробник: Infineon Technologies
Description: MOSFET P-CH 40V 70A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 70A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 120µA
Supplier Device Package: PG-TO252-3-313
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5430 pF @ 25 V
Qualification: AEC-Q101
на замовлення 4998 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+142.06 грн
10+87.04 грн
100+58.73 грн
500+43.74 грн
1000+40.08 грн
Мінімальне замовлення: 3
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FD300R17KE4PHOSA1 Infineon-FD300R17KE4P-DS-v02_00-EN.pdf?fileId=5546d46269e1c019016a54c865b65577
FD300R17KE4PHOSA1
Виробник: Infineon Technologies
Description: IGBT MODULE 1700V 300A AG62MM-1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Chopper
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 300A
NTC Thermistor: No
Supplier Device Package: AG-62MM-1
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 300 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Cutoff (Max): 1 mA
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F3L200R07W2S5B11BOMA1
F3L200R07W2S5B11BOMA1
Виробник: Infineon Technologies
Description: LOW POWER EASY AG-EASY2B-2
Packaging: Bulk
на замовлення 150 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+4699.17 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
F3L200R07W2S5B11BOMA1
F3L200R07W2S5B11BOMA1
Виробник: Infineon Technologies
Description: LOW POWER EASY AG-EASY2B-2
Packaging: Tray
на замовлення 15 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+5328.15 грн
15+4650.05 грн
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BTS133TCAUMA1
BTS133TCAUMA1
Виробник: Infineon Technologies
Description: IC PWR SWITCH
Features: Auto Restart, Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 40mOhm
Input Type: Non-Inverting
Voltage - Load: 60V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 7A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO263-3-2
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, Short Circuit
Part Status: Not For New Designs
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BTS500701TMAATMA1 BTS50070-1TMA_Sept2008.pdf
BTS500701TMAATMA1
Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 TO220-7
Features: Auto Restart
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 7mOhm
Input Type: Non-Inverting
Voltage - Load: 5.5V ~ 30V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 12A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO220-7-4
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
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BTS500701TMBAKSA1 BTS50070-1TMB_Sept2008.pdf
BTS500701TMBAKSA1
Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 TO220-7
Features: Auto Restart
Packaging: Tube
Package / Case: TO-220-7
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 7mOhm
Input Type: Non-Inverting
Voltage - Load: 5.5V ~ 30V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 12A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO220-7-12
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
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BCR 196T E6327 BCR196%20%282006%29.pdf
BCR 196T E6327
Виробник: Infineon Technologies
Description: TRANS PREBIAS PNP 50V 0.07A SC75
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V
Supplier Device Package: PG-SC75-3D
Current - Collector (Ic) (Max): 70 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Resistors Included: R1 and R2
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BCR 196F E6327 bcr196series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a37301144048156b02db
BCR 196F E6327
Виробник: Infineon Technologies
Description: TRANS PREBIAS PNP 50V TSFP-3
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V
Supplier Device Package: PG-TSFP-3
Current - Collector (Ic) (Max): 70 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Resistors Included: R1 and R2
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BCR 196L3 E6327 BCR196%20%282006%29.pdf
BCR 196L3 E6327
Виробник: Infineon Technologies
Description: TRANS PREBIAS PNP 50V TSLP-3
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V
Supplier Device Package: PG-TSLP-3-4
Current - Collector (Ic) (Max): 70 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Resistors Included: R1 and R2
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EVALM13645ATOBO2 Infineon-AN2016-15_EVAL-M1-36-45A_User_Manual-UM-v01_02-EN.pdf?fileId=5546d4625cc9456a015d2b0ce2497e69
EVALM13645ATOBO2
Виробник: Infineon Technologies
Description: EVAL BOARD FOR IRSM836-045MA
Packaging: Bulk
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: IRSM836-045MA
Supplied Contents: Board(s)
Primary Attributes: 165VAC ~ 265VAC
Secondary Attributes: On-Board LEDs, Test Points
Embedded: No
Part Status: Active
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BSM100GB120DN2K EUPCS02845-1.pdf?t.download=true&u=5oefqw
Виробник: Infineon Technologies
Description: INSULATED GATE BIPOLAR TRANSISTO
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IDC05S60CEX1SA1 IDC05S60CE.pdf
Виробник: Infineon Technologies
Description: DIODE SIC 600V 5A SAWN WAFER
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SIDC07D60F6X1SA2 SIDC07D60F6_L4364M.pdf?folderId=db3a304412b407950112b435f2e4642a&fileId=db3a304412b407950112b435f361642b
Виробник: Infineon Technologies
Description: DIODE GP 600V 22.5A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 22.5A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 22.5 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
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SIDC03D60F6X1SA2 SIDC03D60F6_L4324M.pdf?folderId=db3a304412b407950112b435eacc6416&fileId=db3a304412b407950112b435eb496417
Виробник: Infineon Technologies
Description: DIODE GP 600V 6A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 6 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
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SIDC02D60C6X1SA4 SIDC02D60C6.pdf
Виробник: Infineon Technologies
Description: DIODE GP 600V 6A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 6 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
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SIDC03D120H6X1SA3 SIDC03D120H6.pdf
Виробник: Infineon Technologies
Description: DIODE GP 1.2KV 3A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
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SIDC03D60C6X1SA2 SIDC03D60C6.pdf
Виробник: Infineon Technologies
Description: DIODE GP 600V 10A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 10 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
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SIDC05D60C6X1SA2 SIDC05D60C6.pdf
Виробник: Infineon Technologies
Description: DIODE GP 600V 15A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 15 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
товару немає в наявності
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SIDC02D60F6X1SA1 SIDC02D60F6_L4314M.pdf?folderId=db3a304314dca3890115122467810c94&fileId=db3a3043271faefd0127718d00506e36
Виробник: Infineon Technologies
Description: DIODE GP 600V 3A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
товару немає в наявності
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SIDC02D60C8F1SA1
Виробник: Infineon Technologies
Description: DIODE SWITCHING 600V 6A WAFER
товару немає в наявності
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SIDC07D60F6X7SA1
Виробник: Infineon Technologies
Description: DIODE SWITCHING 600V WAFER
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SIDC07D60F6X1SA5 SIDC07D60F6_ed2.1_9-3-10.pdf
Виробник: Infineon Technologies
Description: DIODE SWITCHING 600V WAFER
товару немає в наявності
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SIDC03D120F6X1SA1 SIDC03D120F6_L4375M.pdf?folderId=db3a304412b407950112b439c4b16eaf&fileId=db3a304412b407950112b439c53d6eb0
Виробник: Infineon Technologies
Description: DIODE GP 1.2KV 2A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 2 A
Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
товару немає в наявності
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SIDC07D60E6X1SA1 Infineon-SIDC07D60E6_L4293M-DS-v01_00-en.pdf?fileId=db3a30433e30e4bf013e402a6d9f1096
Виробник: Infineon Technologies
Description: DIODE GP 600V 15A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 15 A
Current - Reverse Leakage @ Vr: 250 µA @ 600 V
товару немає в наявності
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SIDC03D60C8X7SA2
Виробник: Infineon Technologies
Description: DIODE SWITCHING 600V 10A WAFER
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BCR166E6393HTSA1 SIEMD095-687.pdf?t.download=true&u=5oefqw
BCR166E6393HTSA1
Виробник: Infineon Technologies
Description: TRANS PREBIAS
Packaging: Bulk
Part Status: Active
на замовлення 182000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
8955+2.02 грн
Мінімальне замовлення: 8955
В кошику  од. на суму  грн.
MB96F646RBPMC-GS-107JAE2
MB96F646RBPMC-GS-107JAE2
Виробник: Infineon Technologies
Description: IC MCU 16BIT 288KB FLASH 100LQFP
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