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T1220N26TOFVTXPSA1 T1220N26TOFVTXPSA1 Infineon Technologies Infineon-T1220N-DS-v01_00-en_de.pdf?fileId=db3a304323b87bc20123ffdbc9195c3c Description: SCR MODULE 2.8KV 2625A TO-200AC
Packaging: Tray
Package / Case: TO-200AC
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 500 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 25000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 1220 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 2625 A
Voltage - Off State: 2.8 kV
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CY8C21345-24SXIT CY8C21345-24SXIT Infineon Technologies Infineon-CY8C21345_CY8C22345_CY8C22545_PSoC_Programmable_System-on-Chip-DataSheet-v24_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec6d23f3d51&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MCU 8BIT 8KB FLASH 28SOIC
Packaging: Tape & Reel (TR)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 3x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.25V
Connectivity: I2C, IrDA, SPI, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 28-SOIC
Number of I/O: 24
DigiKey Programmable: Not Verified
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
1000+105.79 грн
Мінімальне замовлення: 1000
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CY8C21345-24SXIT CY8C21345-24SXIT Infineon Technologies Infineon-CY8C21345_CY8C22345_CY8C22545_PSoC_Programmable_System-on-Chip-DataSheet-v24_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec6d23f3d51&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MCU 8BIT 8KB FLASH 28SOIC
Packaging: Cut Tape (CT)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 3x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.25V
Connectivity: I2C, IrDA, SPI, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 28-SOIC
Number of I/O: 24
DigiKey Programmable: Not Verified
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
2+219.91 грн
10+158.40 грн
25+145.04 грн
100+122.30 грн
250+115.71 грн
500+111.75 грн
Мінімальне замовлення: 2
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IRF9Z34NLPBF IRF9Z34NLPBF Infineon Technologies irf9z34nspbf.pdf?fileId=5546d462533600a40153561228de1de0 description Description: MOSFET P-CH 55V 19A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 10V
Power Dissipation (Max): 3.8W (Ta), 68W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 25 V
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IPD70N12S311ATMA2 IPD70N12S311ATMA2 Infineon Technologies Infineon-IPD70N12S3-11-DataSheet-v01_01-EN.pdf?fileId=5546d4625c54d85b015c59bb04e36ce6 Description: MOSFET_(120V 300V)
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 11.1mOhm @ 70A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 83µA
Supplier Device Package: PG-TO252-3-11
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4355 pF @ 25 V
Qualification: AEC-Q101
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FF1500R17IP5RBPSA1 FF1500R17IP5RBPSA1 Infineon Technologies Infineon-FF1500R17IP5R-DataSheet-v03_01-EN.pdf?fileId=5546d46272e49d2a01734dfc2633711f Description: PP IHM I XHP 1 7KV AG-PRIME3-5
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 1.5kA
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 1500 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 10 mA
Input Capacitance (Cies) @ Vce: 88 nF @ 25 V
на замовлення 165 шт:
термін постачання 21-31 дні (днів)
1+53752.84 грн
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DF100R07W1H5FPB53BPSA2 DF100R07W1H5FPB53BPSA2 Infineon Technologies Infineon-DF100R07W1H5FP_B53-DataSheet-v03_00-EN.pdf?fileId=5546d46259d9a4bf015a64b1b0c55aed Description: IGBT MOD 650V 40A 20MW
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 1.55V @ 15V, 25A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Cutoff (Max): 40 µA
Input Capacitance (Cies) @ Vce: 2.8 nF @ 25 V
на замовлення 30 шт:
термін постачання 21-31 дні (днів)
11+2054.88 грн
Мінімальне замовлення: 11
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FP200R12N3T7BPSA1 FP200R12N3T7BPSA1 Infineon Technologies Infineon-FP200R12N3T7-DataSheet-v00_10-EN.pdf?fileId=5546d4627aa5d4f5017b0ad005d8710e Description: LOW POWER ECONO AG-ECONO3-3
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter with Brake
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.55V @ 15V, 200A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO3B
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 20 µA
Input Capacitance (Cies) @ Vce: 40.3 nF @ 25 V
на замовлення 7 шт:
термін постачання 21-31 дні (днів)
2+11396.72 грн
Мінімальне замовлення: 2
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CY62167G30-55BVXET CY62167G30-55BVXET Infineon Technologies download Description: IC SRAM 16MBIT PARALLEL 48VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 2M x 8, 1M x 16
DigiKey Programmable: Not Verified
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IRSM515-024PA IRSM515-024PA Infineon Technologies irsm505-024.pdf Description: IC HALF BRIDGE DRIVER 1.6A 23SOP
Packaging: Bulk
Features: Bootstrap Circuit
Package / Case: 23-PowerSMD Module
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 16.5V
Rds On (Typ): 1.8Ohm
Applications: AC Motors
Current - Output / Channel: 1.6A
Current - Peak Output: 7A
Technology: UMOS
Voltage - Load: 200V (Max)
Supplier Device Package: 23-SOP
Fault Protection: UVLO
Load Type: Inductive
на замовлення 14029 шт:
термін постачання 21-31 дні (днів)
84+262.15 грн
Мінімальне замовлення: 84
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BGT60LTR11SAIP BGT60LTR11SAIP Infineon Technologies Infineon-BGT60LTR11SAIP-DataSheet-v02_06-EN.pdf?fileId=8ac78c8c821f3890018268a7eb6e1c51 Description: PROFET PG-TSDSO-14
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
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BGT60LTR11SAIP BGT60LTR11SAIP Infineon Technologies Infineon-BGT60LTR11SAIP-DataSheet-v02_06-EN.pdf?fileId=8ac78c8c821f3890018268a7eb6e1c51 Description: PROFET PG-TSDSO-14
Packaging: Cut Tape (CT)
DigiKey Programmable: Not Verified
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DEMOBGT60UTR11AIPTOBO1 DEMOBGT60UTR11AIPTOBO1 Infineon Technologies Infineon-AN699_Radar_Baseboard_MCU7_Plus-ApplicationNotes-v01_00-EN.pdf?fileId=8ac78c8c88704c7a01888bb70e617c92 Description: EVAL BOARD FOR BGT60UTR11AIP
Packaging: Bulk
For Use With/Related Products: BGT60UTR11AIP
Frequency: 60GHz
Type: Transceiver; RADAR
Supplied Contents: Board(s)
Sensitivity: 60GHz
Sensor Type: Radar
Utilized IC / Part: BGT60UTR11AIP
на замовлення 9 шт:
термін постачання 21-31 дні (днів)
1+12505.39 грн
В кошику  од. на суму  грн.
CY9BF216TBGL-GK7E1 CY9BF216TBGL-GK7E1 Infineon Technologies Infineon-CY9B210T_SERIES_32_BIT_ARM_CORTEX_M3_FM3_MICROCONTROLLER-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ede8ca16378&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MCU 32BIT 512KB FLASH 192FBGA
Packaging: Tray
Package / Case: 192-LFBGA
Mounting Type: Surface Mount
Speed: 144MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 32x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, Ethernet, I2C, LINbus, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 192-FBGA (12x12)
Number of I/O: 154
DigiKey Programmable: Not Verified
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CY3203-105 CY3203-105 Infineon Technologies PSoC%20Dev.%20Tools%20Selector%20Guide.pdf Description: PSOC EMU POD FT 44-TQFP 1=5PCS
Packaging: Bulk
For Use With/Related Products: CY8C26643
Accessory Type: Emulator Foot Kit
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
1+4849.09 грн
В кошику  од. на суму  грн.
CY8C26643-24PVI CY8C26643-24PVI Infineon Technologies CY8C25122%2C26233%2C26443%2C26643.pdf Description: IC MCU 8BIT 16KB FLASH 48SSOP
Packaging: Tube
Package / Case: 48-BSSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 1x8b, 1x11b, 1x12b; D/A 1x9b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.25V
Connectivity: SPI, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 48-SSOP
Number of I/O: 44
DigiKey Programmable: Not Verified
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CY8C26643-24AXI CY8C26643-24AXI Infineon Technologies CY8C25122%2C26233%2C26443%2C26643.pdf Description: IC MCU 8BIT 16KB FLASH 44TQFP
Packaging: Bag
Package / Case: 44-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 1x8b, 1x11b, 1x12b; D/A 1x9b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.25V
Connectivity: SPI, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 44-TQFP (10x10)
Number of I/O: 40
DigiKey Programmable: Not Verified
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CY8C26643-24PVXI CY8C26643-24PVXI Infineon Technologies CY8C25122%2C26233%2C26443%2C26643.pdf Description: IC MCU 8BIT 16KB FLASH 48SSOP
Packaging: Tube
Package / Case: 48-BSSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 1x8b, 1x11b, 1x12b; D/A 1x9b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.25V
Connectivity: SPI, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 48-SSOP
Number of I/O: 44
DigiKey Programmable: Not Verified
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TDA21472AUMA1 TDA21472AUMA1 Infineon Technologies Infineon-TDA21472-DataSheet-v02_00-EN.pdf?fileId=5546d4626cb27db2016d175ca2e1448e Description: IC GATE DRVR C_IFX POWERSTAGE
Packaging: Cut Tape (CT)
Package / Case: 39-PowerVFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.25V ~ 16V
Supplier Device Package: PG-IQFN-39-2
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CS7453ATT Infineon Technologies Description: IC MCU CAPSENSE PLUS 32QFN
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
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IR25600STRPBF IR25600STRPBF Infineon Technologies ir25600.pdf?fileId=5546d462533600a4015355c9bcd116e7 Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 6V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 15ns, 10ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 2.3A, 3.3A
DigiKey Programmable: Not Verified
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IR25600STRPBF IR25600STRPBF Infineon Technologies ir25600.pdf?fileId=5546d462533600a4015355c9bcd116e7 Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 6V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 15ns, 10ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 2.3A, 3.3A
DigiKey Programmable: Not Verified
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IR25600PBF IR25600PBF Infineon Technologies ir25600.pdf?fileId=5546d462533600a4015355c9bcd116e7 Description: IC GATE DRVR LOW-SIDE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 6V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 15ns, 10ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 2.3A, 3.3A
DigiKey Programmable: Not Verified
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DEVKITNGC1081TOBO1 DEVKITNGC1081TOBO1 Infineon Technologies Infineon-NFC_actuation_sensing_IC_DEV_KIT_NGC1081_evaluation_kit-UserManual-v01_00-EN.pdf?fileId=8ac78c8c8779172a0187c3e130486596 Description: EVAL BOARD FOR NGC1081
Packaging: Bulk
For Use With/Related Products: NGC1081
Type: Near Field Communication (NFC)
Supplied Contents: Board(s)
на замовлення 19 шт:
термін постачання 21-31 дні (днів)
1+6047.87 грн
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CY4541 CY4541 Infineon Technologies Infineon-EZ-PD_CCG4_USB_Type-C_Port_Controller-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed7dee9595f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: KIT DEV TYPE C CNTRLR
Packaging: Bulk
Function: USB Type-C®
Type: Interface
Utilized IC / Part: CCG4
Supplied Contents: Board(s), Cable(s), Power Supply
Primary Attributes: 2-Channel (Dual)
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
1+20905.56 грн
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DSO8CANBOARDTOBO1 DSO8CANBOARDTOBO1 Infineon Technologies Infineon-Z8F62791012_DSO-8_TSON-8_CAN_Demoboard-UserManual-v01_10-EN.pdf?fileId=5546d46265487f7b01658a8fdcb64078 Description: EVAL BOARD FOR TLE9251V
Packaging: Bulk
Function: CAN Transceiver
Type: Interface
Utilized IC / Part: TLE9251V
Supplied Contents: Board(s)
Embedded: No
Contents: Board(s)
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
1+6609.15 грн
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MULTICANSBCBOARDTOBO1 MULTICANSBCBOARDTOBO1 Infineon Technologies Infineon-TLE9278BQX_EB-UserManual-v01_00-EN.pdf?fileId=5546d46269e1c019016ae462465136b6 Description: EVAL BOARD FOR TLE9278
Packaging: Bulk
Function: System Basis Chip (SBC)
Type: Interface
Utilized IC / Part: TLE9278
Supplied Contents: Board(s)
Embedded: No
Contents: Board(s)
Secondary Attributes: On-Board LEDs
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
1+9487.01 грн
В кошику  од. на суму  грн.
MULTICANSBCV33BOARDTOBO1 MULTICANSBCV33BOARDTOBO1 Infineon Technologies Infineon-TLE9278BQX_EB-UserManual-v01_00-EN.pdf?fileId=5546d46269e1c019016ae462465136b6 Description: EVAL BOARD FOR TLE9278
Packaging: Bulk
Function: System Basis Chip (SBC)
Type: Interface
Utilized IC / Part: TLE9278
Supplied Contents: Board(s)
Embedded: No
Contents: Board(s)
Secondary Attributes: On-Board LEDs
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
1+9487.01 грн
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KITT2G-B-ELITE KITT2G-B-ELITE Infineon Technologies Description: INTERFACE DEVELOPMENT TOOLS
Packaging: Bulk
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: ARM® Cortex®-M0+, Cortex®-M4F
Utilized IC / Part: CYT4BF
на замовлення 16 шт:
термін постачання 21-31 дні (днів)
1+13496.96 грн
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MR163WBOARDTOBO1 MR163WBOARDTOBO1 Infineon Technologies fundamentals-of-power-semiconductors Description: EVAL BOARD MR16 3W ILD4035
Packaging: Box
Voltage - Input: 12VAC
Current - Output / Channel: 350mA
Utilized IC / Part: ILD4035
Supplied Contents: Board(s)
Outputs and Type: 1 Non-Isolated Output
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
1+1386.14 грн
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TT310N20KOFHPSA1 TT310N20KOFHPSA1 Infineon Technologies Infineon-TT310N-DS-v01_00-en_de.pdf?fileId=db3a304412b407950112b42fe1884e20 Description: SCR MODULE 2KV 700A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 10000A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 446 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (RMS)) (Max): 700 A
Voltage - Off State: 2 kV
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CYTMA568-56LQI44BBT Infineon Technologies CYTMA568_Summary_RevA_5-26-16.pdf Description: IC MCU 32BIT 56QFN
Packaging: Tape & Reel (TR)
Package / Case: 56-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI
Voltage - Supply: 1.71V ~ 5.5V
Resolution (Bits): 32 b
Supplier Device Package: 56-QFN (6x6)
Touchscreen: 2 Wire Capacitive
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BCX71HE6327HTSA1 BCX71HE6327HTSA1 Infineon Technologies bcw61_bcx71.pdf?folderId=db3a304314dca389011541d30fa21656&fileId=db3a304314dca3890115422f2cbc173b Description: TRANS PNP 45V 0.1A SOT-23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 330 mW
на замовлення 1212000 шт:
термін постачання 21-31 дні (днів)
6885+2.85 грн
Мінімальне замовлення: 6885
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IPC022N03L3X1SA1 IPC022N03L3X1SA1 Infineon Technologies DS_IPC022N03L3_2_5.pdf?fileId=db3a30434422e00e01442b91e83f5190 Description: MOSFET N-CH 30V 1A SAWN ON FOIL
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tj)
Rds On (Max) @ Id, Vgs: 50mOhm @ 2A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: Sawn on foil
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 30 V
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IR2183PBF IR2183PBF Infineon Technologies ir2183.pdf?fileId=5546d462533600a4015355c9490e16d1 Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
DigiKey Programmable: Not Verified
на замовлення 2778 шт:
термін постачання 21-31 дні (днів)
102+206.61 грн
Мінімальне замовлення: 102
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BCX52H6327XTSA1 BCX52H6327XTSA1 Infineon Technologies bcx51_bcx52_bcx53.pdf?folderId=db3a304314dca38901155ffc06d51dc7&fileId=db3a3043156fd573011589c08423034d&location=.en.product.findProductTypeByName.html_dgdl_bcx51_bcx52_bcx53.pdf Description: TRANS PNP 60V 1A PG-SOT89
Packaging: Bulk
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
Frequency - Transition: 125MHz
Supplier Device Package: PG-SOT89
Grade: Automotive
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 2 W
Qualification: AEC-Q101
на замовлення 75000 шт:
термін постачання 21-31 дні (днів)
2722+8.33 грн
Мінімальне замовлення: 2722
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BCX52E6327HTSA1 BCX52E6327HTSA1 Infineon Technologies bcx51_bcx52_bcx53.pdf?folderId=db3a304314dca38901155ffc06d51dc7&fileId=db3a3043156fd573011589c08423034d&location=.en.product.findProductTypeByName.html_dgdl_bcx51_bcx52_bcx53.pdf Description: TRANS PNP 60V 1A PG-SOT89
Packaging: Bulk
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
Frequency - Transition: 125MHz
Supplier Device Package: PG-SOT89
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 2 W
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
3463+6.81 грн
Мінімальне замовлення: 3463
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FF1200R17IP5BPSA1 FF1200R17IP5BPSA1 Infineon Technologies Infineon-FF1200R17IP5-DS-v03_00-EN.pdf?fileId=5546d4625cc9456a015d07ef5df47f1e Description: IGBT MOD 1700V 1200A 20MW
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 1200A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 1200 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 68 nF @ 25 V
на замовлення 7 шт:
термін постачання 21-31 дні (днів)
1+42485.13 грн
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TT520N22KOFHPSA2 TT520N22KOFHPSA2 Infineon Technologies Infineon-TT520N22KOF-DS-v03_01-en_de.pdf?fileId=5546d461464245d3014666905b5960e7 Description: THYRISTOR MODULE 2200V 520A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 125°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 520 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Current - On State (It (RMS)) (Max): 1050 A
Voltage - Off State: 2.2 kV
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
1+24139.88 грн
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BC849CWH6327XTSA1 BC849CWH6327XTSA1 Infineon Technologies bc846%2Cbc847%2Cbc848%2Cbc849%2Cbc850.pdf Description: TRANS NPN 30V 0.1A PG-SOT323
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT323
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 250 mW
на замовлення 3282000 шт:
термін постачання 21-31 дні (днів)
7839+2.79 грн
Мінімальне замовлення: 7839
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AUIPS72211RTRL AUIPS72211RTRL Infineon Technologies AUIPS72211R-DS-v01_6-3-17.pdf Description: IC PWR SWITCH N-CHAN 1:1 DPAK-5
Packaging: Tape & Reel (TR)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 30mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 60V
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO252-5
Fault Protection: Current Limiting (Fixed), Over Temperature
Grade: Automotive
Qualification: AEC-Q100
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BC847AE6327HTSA1 BC847AE6327HTSA1 Infineon Technologies Infineon-Infineon-BC847SERIES_BC848SERIES_BC849SERIES_BC850SERIES-DS-v01_01-en-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c7f2a768a017f54161c8f4f97 Description: TRANS NPN 45V 0.1A PG-SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SOT23
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 200 mW
на замовлення 331204 шт:
термін постачання 21-31 дні (днів)
7123+2.79 грн
Мінімальне замовлення: 7123
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BTS500071LUAAUMA1 BTS500071LUAAUMA1 Infineon Technologies Infineon-BTS50007-1LUA-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8afe5bd0018b1e92a4171dc1 Description: MULTICHIP PROFET & GD
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 700mOhm
Input Type: Non-Inverting
Voltage - Load: 3.1V ~ 28V
Voltage - Supply (Vcc/Vdd): 3.1V ~ 28V
Current - Output (Max): 55A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-HSOF-8-5
Fault Protection: Open Load Detect, Over Load, Over Temperature, Reverse Battery, Short Circuit
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
2000+194.18 грн
Мінімальне замовлення: 2000
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BTG70501EPLXUMA1 BTG70501EPLXUMA1 Infineon Technologies Infineon-BTG7050-1EPL-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8386267f0183b275cd070eee Description: IC PWR SWITCH N-CHAN 1:1 14TSSOP
Packaging: Tape & Reel (TR)
Features: Slew Rate Controlled
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 50mOhm
Input Type: Non-Inverting
Voltage - Load: 2.7V ~ 28V
Voltage - Supply (Vcc/Vdd): 2.7V ~ 28V
Current - Output (Max): 3A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-14
Fault Protection: Current Limiting (Fixed), Over Load, Over Temperature, Over Voltage, Reverse Battery, Short Circuit, UVLO
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BTG70501EPLXUMA1 BTG70501EPLXUMA1 Infineon Technologies Infineon-BTG7050-1EPL-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8386267f0183b275cd070eee Description: IC PWR SWITCH N-CHAN 1:1 14TSSOP
Packaging: Cut Tape (CT)
Features: Slew Rate Controlled
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 50mOhm
Input Type: Non-Inverting
Voltage - Load: 2.7V ~ 28V
Voltage - Supply (Vcc/Vdd): 2.7V ~ 28V
Current - Output (Max): 3A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-14
Fault Protection: Current Limiting (Fixed), Over Load, Over Temperature, Over Voltage, Reverse Battery, Short Circuit, UVLO
на замовлення 2850 шт:
термін постачання 21-31 дні (днів)
3+107.18 грн
10+75.30 грн
25+68.35 грн
100+56.91 грн
250+53.47 грн
500+51.39 грн
1000+48.87 грн
Мінімальне замовлення: 3
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IAUCN04S6N017TATMA1 IAUCN04S6N017TATMA1 Infineon Technologies Infineon-IAUCN04S6N017T-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c8929aa4d018a1dcbedb71ed7 Description: MOSFET_(20V 40V)
Packaging: Tape & Reel (TR)
Package / Case: 10-LSOP (0.216", 5.48mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 120A (Tj)
Rds On (Max) @ Id, Vgs: 1.73mOhm @ 60A, 10V
Power Dissipation (Max): 103W (Tc)
Vgs(th) (Max) @ Id: 3V @ 40µA
Supplier Device Package: PG-LHDSO-10-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 25 V
Qualification: AEC-Q101
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IAUCN04S6N017TATMA1 IAUCN04S6N017TATMA1 Infineon Technologies Infineon-IAUCN04S6N017T-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c8929aa4d018a1dcbedb71ed7 Description: MOSFET_(20V 40V)
Packaging: Cut Tape (CT)
Package / Case: 10-LSOP (0.216", 5.48mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 120A (Tj)
Rds On (Max) @ Id, Vgs: 1.73mOhm @ 60A, 10V
Power Dissipation (Max): 103W (Tc)
Vgs(th) (Max) @ Id: 3V @ 40µA
Supplier Device Package: PG-LHDSO-10-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 25 V
Qualification: AEC-Q101
на замовлення 1367 шт:
термін постачання 21-31 дні (днів)
3+112.73 грн
10+79.28 грн
25+71.92 грн
100+59.92 грн
250+56.30 грн
500+54.12 грн
1000+51.47 грн
Мінімальне замовлення: 3
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IRS2334STRPBF IRS2334STRPBF Infineon Technologies irs2334pbf.pdf?fileId=5546d462533600a40153567aa9fe280b Description: IC GATE DRVR HALF-BRIDGE 20SOIC
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 20-SOIC
Rise / Fall Time (Typ): 125ns, 50ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
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SKB04N60ATMA1 SKB04N60ATMA1 Infineon Technologies SKB04N60.pdf Description: IGBT NPT 600V 9.4A TO263-3-2
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 180 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 4A
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT
Td (on/off) @ 25°C: 22ns/237ns
Switching Energy: 131µJ
Test Condition: 400V, 4A, 67Ohm, 15V
Gate Charge: 24 nC
Current - Collector (Ic) (Max): 9.4 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 19 A
Power - Max: 50 W
на замовлення 2499 шт:
термін постачання 21-31 дні (днів)
270+77.48 грн
Мінімальне замовлення: 270
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IPB070N06N G IPB070N06N G Infineon Technologies IP%28B%2CI%2CP%29070N06N_G.pdf Description: MOSFET N-CHAN D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 80A, 10V
Vgs(th) (Max) @ Id: 4V @ 180µA
Supplier Device Package: PG-TO263-3
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 126 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 30 V
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S6E1C32B0AGU1H020 Infineon Technologies Infineon-S6E1C32D0AGN20050-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c81ae03fc0181ec33e75c2c49 Description: IC MCU 32BIT 128KB FLASH 30WLCSP
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 6x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, I2C, LINbus, UART/USART, USB
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 30-WLCSP
Number of I/O: 24
DigiKey Programmable: Not Verified
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IRS2127PBF IRS2127PBF Infineon Technologies irs2127pbf.pdf?fileId=5546d462533600a4015356768e7a27c0 Description: IC GATE DRVR HIGH-SIDE 8DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 12V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 80ns, 40ns
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
DigiKey Programmable: Not Verified
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
160+137.67 грн
Мінімальне замовлення: 160
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IRS20965SPBF IRS20965SPBF Infineon Technologies irs20965spbf.pdf?fileId=5546d462533600a4015356761d8b279b Description: IC AMP CLASS D MONO 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: 1-Channel (Mono)
Mounting Type: Surface Mount
Type: Class D
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 15V
Supplier Device Package: 16-SOIC
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IRFU7440PBF IRFU7440PBF Infineon Technologies irfr7440pbf.pdf?fileId=5546d462533600a4015356359e662117 Description: MOSFET N-CH 40V 90A IPAK
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 90A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 100µA
Supplier Device Package: IPAK (TO-251AA)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 134 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4610 pF @ 25 V
на замовлення 35150 шт:
термін постачання 21-31 дні (днів)
409+55.60 грн
Мінімальне замовлення: 409
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IRFU7440PBF IRFU7440PBF Infineon Technologies irfr7440pbf.pdf?fileId=5546d462533600a4015356359e662117 Description: MOSFET N-CH 40V 90A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 90A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 100µA
Supplier Device Package: IPAK (TO-251AA)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 134 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4610 pF @ 25 V
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AUIRF1405ZL AUIRF1405ZL Infineon Technologies IRSDS11127-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 55V 150A TO262
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 75A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4780 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 420 шт:
термін постачання 21-31 дні (днів)
195+107.49 грн
Мінімальне замовлення: 195
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AUIRF1405ZL AUIRF1405ZL Infineon Technologies IRSDS11127-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 55V 150A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 75A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4780 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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IRFP4332PBFXKMA1 IRFP4332PBFXKMA1 Infineon Technologies Description: TRENCH >=100V
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 35A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5860 pF @ 25 V
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IMZA75R140M1HXKSA1 IMZA75R140M1HXKSA1 Infineon Technologies Infineon-IMZA75R140M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8d2fe47b018dcbd2f131495c Description: SILICON CARBIDE MOSFET
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tj)
Rds On (Max) @ Id, Vgs: 129mOhm @ 4.7A, 20V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 1.7mA
Supplier Device Package: PG-TO247-4
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 351 pF @ 500 V
на замовлення 235 шт:
термін постачання 21-31 дні (днів)
1+452.52 грн
10+333.93 грн
30+304.19 грн
120+260.55 грн
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BGS16MA12E6327XTSA1 BGS16MA12E6327XTSA1 Infineon Technologies Infineon-BGS16MA12-DS-v01_01-EN.pdf?fileId=5546d46265e7dffd0165ed722b7b691e Description: IC RF SWITCH SP6T 6GHZ ATSLP12
Packaging: Tape & Reel (TR)
Features: DC Blocked
Package / Case: 12-UFQFN Exposed Pad
Impedance: 50Ohm
Circuit: SP6T
RF Type: LTE, W-CDMA
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 1.95V
Insertion Loss: 1.3dB
Frequency Range: 100MHz ~ 6GHz
Test Frequency: 6GHz
Isolation: 27dB
Supplier Device Package: ATSLP-12-10
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T1220N26TOFVTXPSA1 Infineon-T1220N-DS-v01_00-en_de.pdf?fileId=db3a304323b87bc20123ffdbc9195c3c
T1220N26TOFVTXPSA1
Виробник: Infineon Technologies
Description: SCR MODULE 2.8KV 2625A TO-200AC
Packaging: Tray
Package / Case: TO-200AC
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 500 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 25000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 1220 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 2625 A
Voltage - Off State: 2.8 kV
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CY8C21345-24SXIT Infineon-CY8C21345_CY8C22345_CY8C22545_PSoC_Programmable_System-on-Chip-DataSheet-v24_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec6d23f3d51&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY8C21345-24SXIT
Виробник: Infineon Technologies
Description: IC MCU 8BIT 8KB FLASH 28SOIC
Packaging: Tape & Reel (TR)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 3x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.25V
Connectivity: I2C, IrDA, SPI, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 28-SOIC
Number of I/O: 24
DigiKey Programmable: Not Verified
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1000+105.79 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
CY8C21345-24SXIT Infineon-CY8C21345_CY8C22345_CY8C22545_PSoC_Programmable_System-on-Chip-DataSheet-v24_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec6d23f3d51&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY8C21345-24SXIT
Виробник: Infineon Technologies
Description: IC MCU 8BIT 8KB FLASH 28SOIC
Packaging: Cut Tape (CT)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 3x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.25V
Connectivity: I2C, IrDA, SPI, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 28-SOIC
Number of I/O: 24
DigiKey Programmable: Not Verified
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+219.91 грн
10+158.40 грн
25+145.04 грн
100+122.30 грн
250+115.71 грн
500+111.75 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IRF9Z34NLPBF description irf9z34nspbf.pdf?fileId=5546d462533600a40153561228de1de0
IRF9Z34NLPBF
Виробник: Infineon Technologies
Description: MOSFET P-CH 55V 19A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 10V
Power Dissipation (Max): 3.8W (Ta), 68W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 25 V
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IPD70N12S311ATMA2 Infineon-IPD70N12S3-11-DataSheet-v01_01-EN.pdf?fileId=5546d4625c54d85b015c59bb04e36ce6
IPD70N12S311ATMA2
Виробник: Infineon Technologies
Description: MOSFET_(120V 300V)
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 11.1mOhm @ 70A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 83µA
Supplier Device Package: PG-TO252-3-11
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4355 pF @ 25 V
Qualification: AEC-Q101
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FF1500R17IP5RBPSA1 Infineon-FF1500R17IP5R-DataSheet-v03_01-EN.pdf?fileId=5546d46272e49d2a01734dfc2633711f
FF1500R17IP5RBPSA1
Виробник: Infineon Technologies
Description: PP IHM I XHP 1 7KV AG-PRIME3-5
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 1.5kA
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 1500 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 10 mA
Input Capacitance (Cies) @ Vce: 88 nF @ 25 V
на замовлення 165 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+53752.84 грн
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DF100R07W1H5FPB53BPSA2 Infineon-DF100R07W1H5FP_B53-DataSheet-v03_00-EN.pdf?fileId=5546d46259d9a4bf015a64b1b0c55aed
DF100R07W1H5FPB53BPSA2
Виробник: Infineon Technologies
Description: IGBT MOD 650V 40A 20MW
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 1.55V @ 15V, 25A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Cutoff (Max): 40 µA
Input Capacitance (Cies) @ Vce: 2.8 nF @ 25 V
на замовлення 30 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
11+2054.88 грн
Мінімальне замовлення: 11
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FP200R12N3T7BPSA1 Infineon-FP200R12N3T7-DataSheet-v00_10-EN.pdf?fileId=5546d4627aa5d4f5017b0ad005d8710e
FP200R12N3T7BPSA1
Виробник: Infineon Technologies
Description: LOW POWER ECONO AG-ECONO3-3
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter with Brake
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.55V @ 15V, 200A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO3B
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 20 µA
Input Capacitance (Cies) @ Vce: 40.3 nF @ 25 V
на замовлення 7 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+11396.72 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
CY62167G30-55BVXET download
CY62167G30-55BVXET
Виробник: Infineon Technologies
Description: IC SRAM 16MBIT PARALLEL 48VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 2M x 8, 1M x 16
DigiKey Programmable: Not Verified
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IRSM515-024PA irsm505-024.pdf
IRSM515-024PA
Виробник: Infineon Technologies
Description: IC HALF BRIDGE DRIVER 1.6A 23SOP
Packaging: Bulk
Features: Bootstrap Circuit
Package / Case: 23-PowerSMD Module
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 16.5V
Rds On (Typ): 1.8Ohm
Applications: AC Motors
Current - Output / Channel: 1.6A
Current - Peak Output: 7A
Technology: UMOS
Voltage - Load: 200V (Max)
Supplier Device Package: 23-SOP
Fault Protection: UVLO
Load Type: Inductive
на замовлення 14029 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
84+262.15 грн
Мінімальне замовлення: 84
В кошику  од. на суму  грн.
BGT60LTR11SAIP Infineon-BGT60LTR11SAIP-DataSheet-v02_06-EN.pdf?fileId=8ac78c8c821f3890018268a7eb6e1c51
BGT60LTR11SAIP
Виробник: Infineon Technologies
Description: PROFET PG-TSDSO-14
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
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BGT60LTR11SAIP Infineon-BGT60LTR11SAIP-DataSheet-v02_06-EN.pdf?fileId=8ac78c8c821f3890018268a7eb6e1c51
BGT60LTR11SAIP
Виробник: Infineon Technologies
Description: PROFET PG-TSDSO-14
Packaging: Cut Tape (CT)
DigiKey Programmable: Not Verified
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DEMOBGT60UTR11AIPTOBO1 Infineon-AN699_Radar_Baseboard_MCU7_Plus-ApplicationNotes-v01_00-EN.pdf?fileId=8ac78c8c88704c7a01888bb70e617c92
DEMOBGT60UTR11AIPTOBO1
Виробник: Infineon Technologies
Description: EVAL BOARD FOR BGT60UTR11AIP
Packaging: Bulk
For Use With/Related Products: BGT60UTR11AIP
Frequency: 60GHz
Type: Transceiver; RADAR
Supplied Contents: Board(s)
Sensitivity: 60GHz
Sensor Type: Radar
Utilized IC / Part: BGT60UTR11AIP
на замовлення 9 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+12505.39 грн
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CY9BF216TBGL-GK7E1 Infineon-CY9B210T_SERIES_32_BIT_ARM_CORTEX_M3_FM3_MICROCONTROLLER-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ede8ca16378&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY9BF216TBGL-GK7E1
Виробник: Infineon Technologies
Description: IC MCU 32BIT 512KB FLASH 192FBGA
Packaging: Tray
Package / Case: 192-LFBGA
Mounting Type: Surface Mount
Speed: 144MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 32x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, Ethernet, I2C, LINbus, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 192-FBGA (12x12)
Number of I/O: 154
DigiKey Programmable: Not Verified
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CY3203-105 PSoC%20Dev.%20Tools%20Selector%20Guide.pdf
CY3203-105
Виробник: Infineon Technologies
Description: PSOC EMU POD FT 44-TQFP 1=5PCS
Packaging: Bulk
For Use With/Related Products: CY8C26643
Accessory Type: Emulator Foot Kit
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+4849.09 грн
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CY8C26643-24PVI CY8C25122%2C26233%2C26443%2C26643.pdf
CY8C26643-24PVI
Виробник: Infineon Technologies
Description: IC MCU 8BIT 16KB FLASH 48SSOP
Packaging: Tube
Package / Case: 48-BSSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 1x8b, 1x11b, 1x12b; D/A 1x9b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.25V
Connectivity: SPI, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 48-SSOP
Number of I/O: 44
DigiKey Programmable: Not Verified
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CY8C26643-24AXI CY8C25122%2C26233%2C26443%2C26643.pdf
CY8C26643-24AXI
Виробник: Infineon Technologies
Description: IC MCU 8BIT 16KB FLASH 44TQFP
Packaging: Bag
Package / Case: 44-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 1x8b, 1x11b, 1x12b; D/A 1x9b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.25V
Connectivity: SPI, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 44-TQFP (10x10)
Number of I/O: 40
DigiKey Programmable: Not Verified
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CY8C26643-24PVXI CY8C25122%2C26233%2C26443%2C26643.pdf
CY8C26643-24PVXI
Виробник: Infineon Technologies
Description: IC MCU 8BIT 16KB FLASH 48SSOP
Packaging: Tube
Package / Case: 48-BSSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 1x8b, 1x11b, 1x12b; D/A 1x9b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.25V
Connectivity: SPI, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 48-SSOP
Number of I/O: 44
DigiKey Programmable: Not Verified
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TDA21472AUMA1 Infineon-TDA21472-DataSheet-v02_00-EN.pdf?fileId=5546d4626cb27db2016d175ca2e1448e
TDA21472AUMA1
Виробник: Infineon Technologies
Description: IC GATE DRVR C_IFX POWERSTAGE
Packaging: Cut Tape (CT)
Package / Case: 39-PowerVFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.25V ~ 16V
Supplier Device Package: PG-IQFN-39-2
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CS7453ATT
Виробник: Infineon Technologies
Description: IC MCU CAPSENSE PLUS 32QFN
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
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IR25600STRPBF ir25600.pdf?fileId=5546d462533600a4015355c9bcd116e7
IR25600STRPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 6V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 15ns, 10ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 2.3A, 3.3A
DigiKey Programmable: Not Verified
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IR25600STRPBF ir25600.pdf?fileId=5546d462533600a4015355c9bcd116e7
IR25600STRPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 6V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 15ns, 10ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 2.3A, 3.3A
DigiKey Programmable: Not Verified
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IR25600PBF ir25600.pdf?fileId=5546d462533600a4015355c9bcd116e7
IR25600PBF
Виробник: Infineon Technologies
Description: IC GATE DRVR LOW-SIDE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 6V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 15ns, 10ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 2.3A, 3.3A
DigiKey Programmable: Not Verified
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DEVKITNGC1081TOBO1 Infineon-NFC_actuation_sensing_IC_DEV_KIT_NGC1081_evaluation_kit-UserManual-v01_00-EN.pdf?fileId=8ac78c8c8779172a0187c3e130486596
DEVKITNGC1081TOBO1
Виробник: Infineon Technologies
Description: EVAL BOARD FOR NGC1081
Packaging: Bulk
For Use With/Related Products: NGC1081
Type: Near Field Communication (NFC)
Supplied Contents: Board(s)
на замовлення 19 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+6047.87 грн
В кошику  од. на суму  грн.
CY4541 Infineon-EZ-PD_CCG4_USB_Type-C_Port_Controller-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed7dee9595f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY4541
Виробник: Infineon Technologies
Description: KIT DEV TYPE C CNTRLR
Packaging: Bulk
Function: USB Type-C®
Type: Interface
Utilized IC / Part: CCG4
Supplied Contents: Board(s), Cable(s), Power Supply
Primary Attributes: 2-Channel (Dual)
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+20905.56 грн
В кошику  од. на суму  грн.
DSO8CANBOARDTOBO1 Infineon-Z8F62791012_DSO-8_TSON-8_CAN_Demoboard-UserManual-v01_10-EN.pdf?fileId=5546d46265487f7b01658a8fdcb64078
DSO8CANBOARDTOBO1
Виробник: Infineon Technologies
Description: EVAL BOARD FOR TLE9251V
Packaging: Bulk
Function: CAN Transceiver
Type: Interface
Utilized IC / Part: TLE9251V
Supplied Contents: Board(s)
Embedded: No
Contents: Board(s)
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+6609.15 грн
В кошику  од. на суму  грн.
MULTICANSBCBOARDTOBO1 Infineon-TLE9278BQX_EB-UserManual-v01_00-EN.pdf?fileId=5546d46269e1c019016ae462465136b6
MULTICANSBCBOARDTOBO1
Виробник: Infineon Technologies
Description: EVAL BOARD FOR TLE9278
Packaging: Bulk
Function: System Basis Chip (SBC)
Type: Interface
Utilized IC / Part: TLE9278
Supplied Contents: Board(s)
Embedded: No
Contents: Board(s)
Secondary Attributes: On-Board LEDs
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+9487.01 грн
В кошику  од. на суму  грн.
MULTICANSBCV33BOARDTOBO1 Infineon-TLE9278BQX_EB-UserManual-v01_00-EN.pdf?fileId=5546d46269e1c019016ae462465136b6
MULTICANSBCV33BOARDTOBO1
Виробник: Infineon Technologies
Description: EVAL BOARD FOR TLE9278
Packaging: Bulk
Function: System Basis Chip (SBC)
Type: Interface
Utilized IC / Part: TLE9278
Supplied Contents: Board(s)
Embedded: No
Contents: Board(s)
Secondary Attributes: On-Board LEDs
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+9487.01 грн
В кошику  од. на суму  грн.
KITT2G-B-ELITE
KITT2G-B-ELITE
Виробник: Infineon Technologies
Description: INTERFACE DEVELOPMENT TOOLS
Packaging: Bulk
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: ARM® Cortex®-M0+, Cortex®-M4F
Utilized IC / Part: CYT4BF
на замовлення 16 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+13496.96 грн
В кошику  од. на суму  грн.
MR163WBOARDTOBO1 fundamentals-of-power-semiconductors
MR163WBOARDTOBO1
Виробник: Infineon Technologies
Description: EVAL BOARD MR16 3W ILD4035
Packaging: Box
Voltage - Input: 12VAC
Current - Output / Channel: 350mA
Utilized IC / Part: ILD4035
Supplied Contents: Board(s)
Outputs and Type: 1 Non-Isolated Output
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1386.14 грн
В кошику  од. на суму  грн.
TT310N20KOFHPSA1 Infineon-TT310N-DS-v01_00-en_de.pdf?fileId=db3a304412b407950112b42fe1884e20
TT310N20KOFHPSA1
Виробник: Infineon Technologies
Description: SCR MODULE 2KV 700A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 10000A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 446 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (RMS)) (Max): 700 A
Voltage - Off State: 2 kV
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CYTMA568-56LQI44BBT CYTMA568_Summary_RevA_5-26-16.pdf
Виробник: Infineon Technologies
Description: IC MCU 32BIT 56QFN
Packaging: Tape & Reel (TR)
Package / Case: 56-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI
Voltage - Supply: 1.71V ~ 5.5V
Resolution (Bits): 32 b
Supplier Device Package: 56-QFN (6x6)
Touchscreen: 2 Wire Capacitive
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BCX71HE6327HTSA1 bcw61_bcx71.pdf?folderId=db3a304314dca389011541d30fa21656&fileId=db3a304314dca3890115422f2cbc173b
BCX71HE6327HTSA1
Виробник: Infineon Technologies
Description: TRANS PNP 45V 0.1A SOT-23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 330 mW
на замовлення 1212000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6885+2.85 грн
Мінімальне замовлення: 6885
В кошику  од. на суму  грн.
IPC022N03L3X1SA1 DS_IPC022N03L3_2_5.pdf?fileId=db3a30434422e00e01442b91e83f5190
IPC022N03L3X1SA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 1A SAWN ON FOIL
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tj)
Rds On (Max) @ Id, Vgs: 50mOhm @ 2A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: Sawn on foil
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 30 V
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IR2183PBF ir2183.pdf?fileId=5546d462533600a4015355c9490e16d1
IR2183PBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
DigiKey Programmable: Not Verified
на замовлення 2778 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
102+206.61 грн
Мінімальне замовлення: 102
В кошику  од. на суму  грн.
BCX52H6327XTSA1 bcx51_bcx52_bcx53.pdf?folderId=db3a304314dca38901155ffc06d51dc7&fileId=db3a3043156fd573011589c08423034d&location=.en.product.findProductTypeByName.html_dgdl_bcx51_bcx52_bcx53.pdf
BCX52H6327XTSA1
Виробник: Infineon Technologies
Description: TRANS PNP 60V 1A PG-SOT89
Packaging: Bulk
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
Frequency - Transition: 125MHz
Supplier Device Package: PG-SOT89
Grade: Automotive
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 2 W
Qualification: AEC-Q101
на замовлення 75000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2722+8.33 грн
Мінімальне замовлення: 2722
В кошику  од. на суму  грн.
BCX52E6327HTSA1 bcx51_bcx52_bcx53.pdf?folderId=db3a304314dca38901155ffc06d51dc7&fileId=db3a3043156fd573011589c08423034d&location=.en.product.findProductTypeByName.html_dgdl_bcx51_bcx52_bcx53.pdf
BCX52E6327HTSA1
Виробник: Infineon Technologies
Description: TRANS PNP 60V 1A PG-SOT89
Packaging: Bulk
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
Frequency - Transition: 125MHz
Supplier Device Package: PG-SOT89
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 2 W
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3463+6.81 грн
Мінімальне замовлення: 3463
В кошику  од. на суму  грн.
FF1200R17IP5BPSA1 Infineon-FF1200R17IP5-DS-v03_00-EN.pdf?fileId=5546d4625cc9456a015d07ef5df47f1e
FF1200R17IP5BPSA1
Виробник: Infineon Technologies
Description: IGBT MOD 1700V 1200A 20MW
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 1200A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 1200 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 68 nF @ 25 V
на замовлення 7 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+42485.13 грн
В кошику  од. на суму  грн.
TT520N22KOFHPSA2 Infineon-TT520N22KOF-DS-v03_01-en_de.pdf?fileId=5546d461464245d3014666905b5960e7
TT520N22KOFHPSA2
Виробник: Infineon Technologies
Description: THYRISTOR MODULE 2200V 520A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 125°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 520 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Current - On State (It (RMS)) (Max): 1050 A
Voltage - Off State: 2.2 kV
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+24139.88 грн
В кошику  од. на суму  грн.
BC849CWH6327XTSA1 bc846%2Cbc847%2Cbc848%2Cbc849%2Cbc850.pdf
BC849CWH6327XTSA1
Виробник: Infineon Technologies
Description: TRANS NPN 30V 0.1A PG-SOT323
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT323
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 250 mW
на замовлення 3282000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
7839+2.79 грн
Мінімальне замовлення: 7839
В кошику  од. на суму  грн.
AUIPS72211RTRL AUIPS72211R-DS-v01_6-3-17.pdf
AUIPS72211RTRL
Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 DPAK-5
Packaging: Tape & Reel (TR)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 30mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 60V
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO252-5
Fault Protection: Current Limiting (Fixed), Over Temperature
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
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BC847AE6327HTSA1 Infineon-Infineon-BC847SERIES_BC848SERIES_BC849SERIES_BC850SERIES-DS-v01_01-en-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c7f2a768a017f54161c8f4f97
BC847AE6327HTSA1
Виробник: Infineon Technologies
Description: TRANS NPN 45V 0.1A PG-SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SOT23
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 200 mW
на замовлення 331204 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
7123+2.79 грн
Мінімальне замовлення: 7123
В кошику  од. на суму  грн.
BTS500071LUAAUMA1 Infineon-BTS50007-1LUA-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8afe5bd0018b1e92a4171dc1
BTS500071LUAAUMA1
Виробник: Infineon Technologies
Description: MULTICHIP PROFET & GD
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 700mOhm
Input Type: Non-Inverting
Voltage - Load: 3.1V ~ 28V
Voltage - Supply (Vcc/Vdd): 3.1V ~ 28V
Current - Output (Max): 55A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-HSOF-8-5
Fault Protection: Open Load Detect, Over Load, Over Temperature, Reverse Battery, Short Circuit
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2000+194.18 грн
Мінімальне замовлення: 2000
В кошику  од. на суму  грн.
BTG70501EPLXUMA1 Infineon-BTG7050-1EPL-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8386267f0183b275cd070eee
BTG70501EPLXUMA1
Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 14TSSOP
Packaging: Tape & Reel (TR)
Features: Slew Rate Controlled
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 50mOhm
Input Type: Non-Inverting
Voltage - Load: 2.7V ~ 28V
Voltage - Supply (Vcc/Vdd): 2.7V ~ 28V
Current - Output (Max): 3A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-14
Fault Protection: Current Limiting (Fixed), Over Load, Over Temperature, Over Voltage, Reverse Battery, Short Circuit, UVLO
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BTG70501EPLXUMA1 Infineon-BTG7050-1EPL-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8386267f0183b275cd070eee
BTG70501EPLXUMA1
Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 14TSSOP
Packaging: Cut Tape (CT)
Features: Slew Rate Controlled
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 50mOhm
Input Type: Non-Inverting
Voltage - Load: 2.7V ~ 28V
Voltage - Supply (Vcc/Vdd): 2.7V ~ 28V
Current - Output (Max): 3A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-14
Fault Protection: Current Limiting (Fixed), Over Load, Over Temperature, Over Voltage, Reverse Battery, Short Circuit, UVLO
на замовлення 2850 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+107.18 грн
10+75.30 грн
25+68.35 грн
100+56.91 грн
250+53.47 грн
500+51.39 грн
1000+48.87 грн
Мінімальне замовлення: 3
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IAUCN04S6N017TATMA1 Infineon-IAUCN04S6N017T-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c8929aa4d018a1dcbedb71ed7
IAUCN04S6N017TATMA1
Виробник: Infineon Technologies
Description: MOSFET_(20V 40V)
Packaging: Tape & Reel (TR)
Package / Case: 10-LSOP (0.216", 5.48mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 120A (Tj)
Rds On (Max) @ Id, Vgs: 1.73mOhm @ 60A, 10V
Power Dissipation (Max): 103W (Tc)
Vgs(th) (Max) @ Id: 3V @ 40µA
Supplier Device Package: PG-LHDSO-10-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 25 V
Qualification: AEC-Q101
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IAUCN04S6N017TATMA1 Infineon-IAUCN04S6N017T-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c8929aa4d018a1dcbedb71ed7
IAUCN04S6N017TATMA1
Виробник: Infineon Technologies
Description: MOSFET_(20V 40V)
Packaging: Cut Tape (CT)
Package / Case: 10-LSOP (0.216", 5.48mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 120A (Tj)
Rds On (Max) @ Id, Vgs: 1.73mOhm @ 60A, 10V
Power Dissipation (Max): 103W (Tc)
Vgs(th) (Max) @ Id: 3V @ 40µA
Supplier Device Package: PG-LHDSO-10-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 25 V
Qualification: AEC-Q101
на замовлення 1367 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+112.73 грн
10+79.28 грн
25+71.92 грн
100+59.92 грн
250+56.30 грн
500+54.12 грн
1000+51.47 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IRS2334STRPBF irs2334pbf.pdf?fileId=5546d462533600a40153567aa9fe280b
IRS2334STRPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 20SOIC
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 20-SOIC
Rise / Fall Time (Typ): 125ns, 50ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
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SKB04N60ATMA1 SKB04N60.pdf
SKB04N60ATMA1
Виробник: Infineon Technologies
Description: IGBT NPT 600V 9.4A TO263-3-2
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 180 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 4A
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT
Td (on/off) @ 25°C: 22ns/237ns
Switching Energy: 131µJ
Test Condition: 400V, 4A, 67Ohm, 15V
Gate Charge: 24 nC
Current - Collector (Ic) (Max): 9.4 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 19 A
Power - Max: 50 W
на замовлення 2499 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
270+77.48 грн
Мінімальне замовлення: 270
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IPB070N06N G IP%28B%2CI%2CP%29070N06N_G.pdf
IPB070N06N G
Виробник: Infineon Technologies
Description: MOSFET N-CHAN D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 80A, 10V
Vgs(th) (Max) @ Id: 4V @ 180µA
Supplier Device Package: PG-TO263-3
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 126 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 30 V
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S6E1C32B0AGU1H020 Infineon-S6E1C32D0AGN20050-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c81ae03fc0181ec33e75c2c49
Виробник: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 30WLCSP
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 6x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, I2C, LINbus, UART/USART, USB
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 30-WLCSP
Number of I/O: 24
DigiKey Programmable: Not Verified
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IRS2127PBF irs2127pbf.pdf?fileId=5546d462533600a4015356768e7a27c0
IRS2127PBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HIGH-SIDE 8DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 12V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 80ns, 40ns
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
DigiKey Programmable: Not Verified
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
160+137.67 грн
Мінімальне замовлення: 160
В кошику  од. на суму  грн.
IRS20965SPBF irs20965spbf.pdf?fileId=5546d462533600a4015356761d8b279b
IRS20965SPBF
Виробник: Infineon Technologies
Description: IC AMP CLASS D MONO 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: 1-Channel (Mono)
Mounting Type: Surface Mount
Type: Class D
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 15V
Supplier Device Package: 16-SOIC
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IRFU7440PBF irfr7440pbf.pdf?fileId=5546d462533600a4015356359e662117
IRFU7440PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 90A IPAK
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 90A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 100µA
Supplier Device Package: IPAK (TO-251AA)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 134 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4610 pF @ 25 V
на замовлення 35150 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
409+55.60 грн
Мінімальне замовлення: 409
В кошику  од. на суму  грн.
IRFU7440PBF irfr7440pbf.pdf?fileId=5546d462533600a4015356359e662117
IRFU7440PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 90A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 90A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 100µA
Supplier Device Package: IPAK (TO-251AA)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 134 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4610 pF @ 25 V
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AUIRF1405ZL IRSDS11127-1.pdf?t.download=true&u=5oefqw
AUIRF1405ZL
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 150A TO262
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 75A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4780 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 420 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
195+107.49 грн
Мінімальне замовлення: 195
В кошику  од. на суму  грн.
AUIRF1405ZL IRSDS11127-1.pdf?t.download=true&u=5oefqw
AUIRF1405ZL
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 150A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 75A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4780 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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IRFP4332PBFXKMA1
IRFP4332PBFXKMA1
Виробник: Infineon Technologies
Description: TRENCH >=100V
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 35A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5860 pF @ 25 V
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IMZA75R140M1HXKSA1 Infineon-IMZA75R140M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8d2fe47b018dcbd2f131495c
IMZA75R140M1HXKSA1
Виробник: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tj)
Rds On (Max) @ Id, Vgs: 129mOhm @ 4.7A, 20V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 1.7mA
Supplier Device Package: PG-TO247-4
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 351 pF @ 500 V
на замовлення 235 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+452.52 грн
10+333.93 грн
30+304.19 грн
120+260.55 грн
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BGS16MA12E6327XTSA1 Infineon-BGS16MA12-DS-v01_01-EN.pdf?fileId=5546d46265e7dffd0165ed722b7b691e
BGS16MA12E6327XTSA1
Виробник: Infineon Technologies
Description: IC RF SWITCH SP6T 6GHZ ATSLP12
Packaging: Tape & Reel (TR)
Features: DC Blocked
Package / Case: 12-UFQFN Exposed Pad
Impedance: 50Ohm
Circuit: SP6T
RF Type: LTE, W-CDMA
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 1.95V
Insertion Loss: 1.3dB
Frequency Range: 100MHz ~ 6GHz
Test Frequency: 6GHz
Isolation: 27dB
Supplier Device Package: ATSLP-12-10
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