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S29GL064N90TFA043 S29GL064N90TFA043 Infineon Technologies Description: IC FLASH 64MBIT PARALLEL 48TSOP
Packaging: Tape & Reel (TR)
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 48-TSOP
Grade: Automotive
Write Cycle Time - Word, Page: 90ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 8M x 8, 4M x 16
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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CY7C64013C-PXC CY7C64013C-PXC Infineon Technologies Description: IC MCU 8K FULL SPEED USB 28DIP
Packaging: Tube
Package / Case: 28-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Interface: I2C, USB, HAPI
RAM Size: 256 x 8
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4V ~ 5.25V
Controller Series: CY7C640xx
Program Memory Type: OTP (8kB)
Applications: USB Microcontroller
Core Processor: M8C
Supplier Device Package: 28-PDIP
Number of I/O: 19
DigiKey Programmable: Not Verified
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CY8C4124LQE-S413 CY8C4124LQE-S413 Infineon Technologies Description: IC MCU 32BIT 16KB FLASH 40UFQFN
Packaging: Tray
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b, 12x12b SAR; D/A 2x7b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 40-QFN (6x6)
Grade: Automotive
Number of I/O: 34
Qualification: AEC-Q100
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CY8C4124LQE-S413T CY8C4124LQE-S413T Infineon Technologies Description: IC MCU 32BIT 16KB FLASH 40UFQFN
Packaging: Tape & Reel (TR)
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b, 12x12b SAR; D/A 2x7b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 40-QFN (6x6)
Grade: Automotive
Number of I/O: 34
Qualification: AEC-Q100
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BSM75GB170DN2HOSA1 Infineon Technologies BSM75GB170DN2_Eupec.pdf Description: IGBT MOD 1700V 110A 625W MOD
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 75A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 110 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 625 W
Input Capacitance (Cies) @ Vce: 11 nF @ 25 V
на замовлення 637 шт:
термін постачання 21-31 дні (днів)
3+8291.50 грн
Мінімальне замовлення: 3
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TLE49614MXTMA1 TLE49614MXTMA1 Infineon Technologies Infineon-TLE4961_4M-DS-v01_00-en.pdf?fileId=db3a304340155f3d0140394b4fd67ddc Description: MAG SWITCH IC HALL EFF SOT23-3
Packaging: Tape & Reel (TR)
Grade: Automotive
Qualification: AEC-Q100
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CY62128EV30LL-45SXIT CY62128EV30LL-45SXIT Infineon Technologies Infineon-CY62128EV30_MoBL_1_Mbit_(128K_X_8)_Static_RAM-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe867f322f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC SRAM 1MBIT PARALLEL 32SOIC
Packaging: Tape & Reel (TR)
Package / Case: 32-SOIC (0.445", 11.30mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-SOIC
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
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CY62128EV30LL-45SXIT CY62128EV30LL-45SXIT Infineon Technologies Infineon-CY62128EV30_MoBL_1_Mbit_(128K_X_8)_Static_RAM-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe867f322f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC SRAM 1MBIT PARALLEL 32SOIC
Packaging: Cut Tape (CT)
Package / Case: 32-SOIC (0.445", 11.30mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-SOIC
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
на замовлення 559 шт:
термін постачання 21-31 дні (днів)
2+310.92 грн
10+265.36 грн
25+253.01 грн
50+229.06 грн
100+220.96 грн
250+210.69 грн
500+199.90 грн
Мінімальне замовлення: 2
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CY62128DV30LL-70ZXI CY62128DV30LL-70ZXI Infineon Technologies CY62128DV30%20Rev2006.pdf Description: IC SRAM 1MBIT PARALLEL 32TSOP I
Packaging: Tube
Package / Case: 32-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-TSOP I
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
на замовлення 891 шт:
термін постачання 21-31 дні (днів)
128+180.70 грн
Мінімальне замовлення: 128
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CY62128DV30LL-70ZXI CY62128DV30LL-70ZXI Infineon Technologies CY62128DV30%20Rev2006.pdf Description: IC SRAM 1MBIT PARALLEL 32TSOP I
Packaging: Tube
Package / Case: 32-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-TSOP I
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
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IM66D120AXTMA1 IM66D120AXTMA1 Infineon Technologies Infineon-IM66D120A-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8c3de074018c63d5dd683a35 Description: MEMS GROWTH
Packaging: Tape & Reel (TR)
Output Type: Digital, PDM
Size / Dimension: 0.138" L x 0.104" W (3.50mm x 2.65mm)
Sensitivity: -26dB ±1dB @ 94dB SPL
Shape: Rectangular
Type: MEMS (Silicon)
S/N Ratio: 66dB
Termination: Solder Pads
Direction: Omnidirectional
Port Location: Bottom
Height (Max): 0.039" (0.99mm)
Voltage - Rated: 1.8 V
Current - Supply: 1.4 mA
Voltage Range: 1.62 V ~ 3.6 V
Frequency Range: 10 Hz ~ 10 kHz
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IM66D120AXTMA1 IM66D120AXTMA1 Infineon Technologies Infineon-IM66D120A-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8c3de074018c63d5dd683a35 Description: MEMS GROWTH
Packaging: Cut Tape (CT)
Output Type: Digital, PDM
Size / Dimension: 0.138" L x 0.104" W (3.50mm x 2.65mm)
Sensitivity: -26dB ±1dB @ 94dB SPL
Shape: Rectangular
Type: MEMS (Silicon)
S/N Ratio: 66dB
Termination: Solder Pads
Direction: Omnidirectional
Port Location: Bottom
Height (Max): 0.039" (0.99mm)
Voltage - Rated: 1.8 V
Current - Supply: 1.4 mA
Voltage Range: 1.62 V ~ 3.6 V
Frequency Range: 10 Hz ~ 10 kHz
на замовлення 4894 шт:
термін постачання 21-31 дні (днів)
3+117.85 грн
10+92.48 грн
25+85.22 грн
50+75.20 грн
100+70.71 грн
250+67.47 грн
Мінімальне замовлення: 3
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S6E2C39J0AGB1000A S6E2C39J0AGB1000A Infineon Technologies download Description: IC MCU 32BIT 1.5MB FLASH 192FBGA
Packaging: Tray
Package / Case: 192-LFBGA
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 1.5MB (1.5M x 8)
RAM Size: 192K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 32x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, I2C, LINbus, SD, SPI, UART/USART, USB
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 192-FBGA (12x12)
Number of I/O: 152
DigiKey Programmable: Not Verified
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S6E2C38H0AGV2000A S6E2C38H0AGV2000A Infineon Technologies download Description: IC MCU 32BIT 1MB FLASH 144LQFP
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 24x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, I2C, LINbus, SD, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 144-LQFP (20x20)
Number of I/O: 120
DigiKey Programmable: Not Verified
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IPSA70R1K2P7SAKMA1 IPSA70R1K2P7SAKMA1 Infineon Technologies Infineon-IPSA70R1K2P7S-DS-v02_00-EN.pdf?fileId=5546d4625f2e26bc015f4d40e16a1340 Description: MOSFET N-CH 700V 4.5A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 900mA, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 40µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 400 V
Input Capacitance (Ciss) (Max) @ Vds: 174 pF @ 400 V
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
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62-0095PBF Infineon Technologies fundamentals-of-power-semiconductors Description: MOSFET N-CH 20V 10A/12A 8SOIC
Packaging: Tube
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 12A (Tc)
Rds On (Max) @ Id, Vgs: 13.4mOhm @ 10A, 10V
Power Dissipation (Max): 2W
Vgs(th) (Max) @ Id: 2.55V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 10 V
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D2200N24TVFXPSA1 D2200N24TVFXPSA1 Infineon Technologies D2200N.pdf Description: DIODE GEN PURP 2.4KV 2200A
Packaging: Tray
Package / Case: DO-200AC, K-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 2200A
Operating Temperature - Junction: -40°C ~ 160°C
Voltage - DC Reverse (Vr) (Max): 2400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 2000 A
Current - Reverse Leakage @ Vr: 150 mA @ 2400 V
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BSM15GD120DN2BOSA1 Infineon Technologies Description: IGBT MOD 1200V 25A 145W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 15A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 145 W
Current - Collector Cutoff (Max): 500 µA
Input Capacitance (Cies) @ Vce: 100 pF @ 25 V
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IGB15N120S7ATMA1 IGB15N120S7ATMA1 Infineon Technologies Infineon-IGB15N120S7-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c914a3ac801917eb7408c326a Description: IGBT TRENCH FS 1200V 34A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A
Supplier Device Package: PG-TO263-3-2
IGBT Type: Trench Field Stop
Test Condition: 600V, 15A, 10Ohm, 15V
Gate Charge: 97 nC
Current - Collector (Ic) (Max): 34 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 141 W
Td (on/off) @ 25°C: 16ns/156ns
Switching Energy: 900µJ (on), 680µJ (off)
на замовлення 589 шт:
термін постачання 21-31 дні (днів)
2+322.62 грн
10+205.00 грн
100+145.04 грн
500+125.55 грн
Мінімальне замовлення: 2
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BGSX24M2U16E6327XTSA1 BGSX24M2U16E6327XTSA1 Infineon Technologies Infineon-BGSX24M2U16-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018dd17eaaed054c Description: ANTENNA DEVICES
Packaging: Tape & Reel (TR)
Features: DC Blocked
Package / Case: 16-UFLGA Exposed Pad
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: DP4T
RF Type: 5G, LTE
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.1V ~ 1.3V, 1.65V ~ 1.95V
Insertion Loss: 1.14dB
Frequency Range: 400MHz ~ 7.125GHz
Topology: Absorptive
Test Frequency: 7.125GHz
Isolation: 35dB
Supplier Device Package: PG-ULGA-16-6
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AUIRFSL8408 AUIRFSL8408 Infineon Technologies AUIRFS%28L%298408.pdf Description: MOSFET N-CH 40V 195A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 100A, 10V
Power Dissipation (Max): 294W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: TO-262
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 324 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10820 pF @ 25 V
на замовлення 450 шт:
термін постачання 21-31 дні (днів)
146+147.99 грн
Мінімальне замовлення: 146
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ROTATEKNOB3D2GOKITTOBO1 ROTATEKNOB3D2GOKITTOBO1 Infineon Technologies ROTATEKNOB3D2GOKITTOBO1_Web.pdf Description: ROTATE & PUSH BUTTON CONTROL ELE
Packaging: Bulk
For Use With/Related Products: 3D Magnetic Sensor
Accessory Type: Knob
на замовлення 6 шт:
термін постачання 21-31 дні (днів)
1+2144.69 грн
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IRGP4760DPBF IRGP4760DPBF Infineon Technologies IRGP4760D%28-E%29PbF.pdf Description: IGBT 650V 90A TO-247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 170 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 48A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 70ns/140ns
Switching Energy: 1.7mJ (on), 1mJ (off)
Test Condition: 400V, 48A, 10Ohm, 15V
Gate Charge: 145 nC
Current - Collector (Ic) (Max): 90 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 144 A
Power - Max: 325 W
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IRGP4760-EPBF IRGP4760-EPBF Infineon Technologies IRGP4760%28-E%29PbF.pdf Description: IGBT 650V 90A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 48A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 70ns/140ns
Switching Energy: 1.7mJ (on), 1mJ (off)
Test Condition: 400V, 48A, 10Ohm, 15V
Gate Charge: 145 nC
Current - Collector (Ic) (Max): 90 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 144 A
Power - Max: 325 W
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IRGP4760PBF IRGP4760PBF Infineon Technologies IRGP4760%28-E%29PbF.pdf Description: IGBT 650V 90A TO-247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 48A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 70ns/140ns
Switching Energy: 1.7mJ (on), 1mJ (off)
Test Condition: 400V, 48A, 10Ohm, 15V
Gate Charge: 145 nC
Current - Collector (Ic) (Max): 90 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 144 A
Power - Max: 325 W
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BGS12WN6E6329XTSA1 BGS12WN6E6329XTSA1 Infineon Technologies 3_cip11424.pdf Description: IC RF SWITCH SPDT 9GHZ CELL WIFI
Packaging: Tape & Reel (TR)
Features: DC Blocked
Package / Case: 6-XFDFN
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: SPDT
RF Type: Bluetooth, UWB, WiFi, WLAN
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Insertion Loss: 1.12dB
Frequency Range: 50MHz ~ 9GHz
Topology: Reflective
Test Frequency: 9GHz
Isolation: 22dB
Supplier Device Package: PG-TSNP-6-2
IIP3: 70dBm
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
15000+10.68 грн
Мінімальне замовлення: 15000
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BGS12WN6E6329XTSA1 BGS12WN6E6329XTSA1 Infineon Technologies 3_cip11424.pdf Description: IC RF SWITCH SPDT 9GHZ CELL WIFI
Packaging: Cut Tape (CT)
Features: DC Blocked
Package / Case: 6-XFDFN
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: SPDT
RF Type: Bluetooth, UWB, WiFi, WLAN
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Insertion Loss: 1.12dB
Frequency Range: 50MHz ~ 9GHz
Topology: Reflective
Test Frequency: 9GHz
Isolation: 22dB
Supplier Device Package: PG-TSNP-6-2
IIP3: 70dBm
на замовлення 16405 шт:
термін постачання 21-31 дні (днів)
18+19.22 грн
20+16.26 грн
25+15.32 грн
100+13.14 грн
250+12.38 грн
500+11.86 грн
1000+11.17 грн
5000+10.13 грн
Мінімальне замовлення: 18
В кошику  од. на суму  грн.
2ED3145MC12LXUMA1 2ED3145MC12LXUMA1 Infineon Technologies Infineon-2ED314xMC12L-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c90530b3a019058e3ec3a2da2 Description: 2ED3145MC12LXUMA1
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 6A, 6.5A
Technology: Capacitive Coupling
Current - Output High, Low: 6A, 6.5A
Voltage - Isolation: 5700Vrms
Approval Agency: UL
Supplier Device Package: PG-DSO-14-71
Rise / Fall Time (Typ): 20ns, 20ns (Max)
Common Mode Transient Immunity (Min): 200kV/µs
Propagation Delay tpLH / tpHL (Max): 40ns, 40ns
Number of Channels: 2
Voltage - Output Supply: 35V
товару немає в наявності
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2ED3145MC12LXUMA1 2ED3145MC12LXUMA1 Infineon Technologies Infineon-2ED314xMC12L-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c90530b3a019058e3ec3a2da2 Description: 2ED3145MC12LXUMA1
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 6A, 6.5A
Technology: Capacitive Coupling
Current - Output High, Low: 6A, 6.5A
Voltage - Isolation: 5700Vrms
Approval Agency: UL
Supplier Device Package: PG-DSO-14-71
Rise / Fall Time (Typ): 20ns, 20ns (Max)
Common Mode Transient Immunity (Min): 200kV/µs
Propagation Delay tpLH / tpHL (Max): 40ns, 40ns
Number of Channels: 2
Voltage - Output Supply: 35V
на замовлення 1480 шт:
термін постачання 21-31 дні (днів)
2+188.89 грн
10+134.81 грн
25+123.08 грн
100+103.40 грн
250+97.64 грн
500+94.16 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
CY7C024-25JXC CY7C024-25JXC Infineon Technologies CY7C024%2C41%2C025%2C0251%20RevC.pdf Description: IC SRAM 64KBIT PARALLEL 84PLCC
Packaging: Tube
Package / Case: 84-LCC (J-Lead)
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Dual Port, Asynchronous
Memory Format: SRAM
Supplier Device Package: 84-PLCC (29.31x29.31)
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Access Time: 25 ns
Memory Organization: 4K x 16
DigiKey Programmable: Not Verified
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CY7C0241-15AXC CY7C0241-15AXC Infineon Technologies CY7C024%2CA%2C0241%2C%20CY7C025%2C0251.pdf Description: IC SRAM 72KBIT PARALLEL 100TQFP
Packaging: Bulk
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 72Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Dual Port, Asynchronous
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x14)
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 4K x 18
DigiKey Programmable: Not Verified
на замовлення 848 шт:
термін постачання 21-31 дні (днів)
18+1327.22 грн
Мінімальне замовлення: 18
В кошику  од. на суму  грн.
CY7C0241E-15AXC CY7C0241E-15AXC Infineon Technologies CY7C024%2C241%2C25%2C251E_RevA.pdf Description: IC SRAM 72KBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 72Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Dual Port, Asynchronous
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x14)
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 4K x 18
DigiKey Programmable: Not Verified
на замовлення 79 шт:
термін постачання 21-31 дні (днів)
1+1221.12 грн
10+1090.01 грн
25+1055.81 грн
В кошику  од. на суму  грн.
CY7C0241E-15AXI CY7C0241E-15AXI Infineon Technologies CY7C024%2C241%2C25%2C251E_RevA.pdf Description: IC SRAM 72KBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 72Kbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Dual Port, Asynchronous
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x14)
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 4K x 18
DigiKey Programmable: Not Verified
на замовлення 69 шт:
термін постачання 21-31 дні (днів)
1+1239.50 грн
10+1104.66 грн
25+1089.74 грн
40+1009.83 грн
В кошику  од. на суму  грн.
CY7C024-55AXC CY7C024-55AXC Infineon Technologies CY7C024%2CA%2C0241%2C%20CY7C025%2C0251.pdf Description: IC SRAM 64KBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Dual Port, Asynchronous
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x14)
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 4K x 16
DigiKey Programmable: Not Verified
товару немає в наявності
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CY7C024-25AXC CY7C024-25AXC Infineon Technologies CY7C024%2CA%2C0241%2C%20CY7C025%2C0251.pdf Description: IC SRAM 64KBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Dual Port, Asynchronous
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x14)
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Access Time: 25 ns
Memory Organization: 4K x 16
DigiKey Programmable: Not Verified
товару немає в наявності
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CY7C024-25AXI CY7C024-25AXI Infineon Technologies CY7C024%2CA%2C0241%2C%20CY7C025%2C0251.pdf Description: IC SRAM 64KBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Dual Port, Asynchronous
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x14)
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Access Time: 25 ns
Memory Organization: 4K x 16
DigiKey Programmable: Not Verified
товару немає в наявності
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CY7C0241-25AXC CY7C0241-25AXC Infineon Technologies CY7C024%2CA%2C0241%2C%20CY7C025%2C0251.pdf Description: IC SRAM 72KBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 72Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Dual Port, Asynchronous
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x14)
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Access Time: 25 ns
Memory Organization: 4K x 18
DigiKey Programmable: Not Verified
товару немає в наявності
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CY7C024A-25JXC CY7C024A-25JXC Infineon Technologies CY7C024%2CA%2C0241%2C%20CY7C025%2C0251.pdf Description: IC SRAM 64KBIT PARALLEL 84PLCC
Packaging: Tube
Package / Case: 84-LCC (J-Lead)
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Dual Port, Asynchronous
Memory Format: SRAM
Supplier Device Package: 84-PLCC (29.31x29.31)
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Access Time: 25 ns
Memory Organization: 4K x 16
DigiKey Programmable: Not Verified
товару немає в наявності
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CY7C0241-15AXI CY7C0241-15AXI Infineon Technologies CY7C024%2CA%2C0241%2C%20CY7C025%2C0251.pdf Description: IC SRAM 72KBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 72Kbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Dual Port, Asynchronous
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x14)
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 4K x 18
DigiKey Programmable: Not Verified
товару немає в наявності
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CY7C024-55AC CY7C024-55AC Infineon Technologies CY7C024%2CA%2C0241%2C%20CY7C025%2C0251.pdf Description: IC SRAM 64KBIT PARALLEL 100TQFP
Packaging: Bag
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Dual Port, Asynchronous
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x14)
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 4K x 16
DigiKey Programmable: Not Verified
товару немає в наявності
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CY7C024-15AC CY7C024-15AC Infineon Technologies CY7C024%2CA%2C0241%2C%20CY7C025%2C0251.pdf Description: IC SRAM 64KBIT PARALLEL 100TQFP
Packaging: Bag
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Dual Port, Asynchronous
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x14)
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 4K x 16
DigiKey Programmable: Not Verified
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CY7C024AV-25AC CY7C024AV-25AC Infineon Technologies CY7C0xxAV_RevH.pdf Description: IC SRAM 64KBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Dual Port, Asynchronous
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x14)
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Access Time: 25 ns
Memory Organization: 4K x 16
DigiKey Programmable: Not Verified
товару немає в наявності
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CY7C024AV-20AXCT CY7C024AV-20AXCT Infineon Technologies CY7C024AV_25AV_26AV_RevT_8-1-17.pdf Description: IC SRAM 64KBIT PARALLEL 100TQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Dual Port, Asynchronous
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x14)
Write Cycle Time - Word, Page: 20ns
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 4K x 16
DigiKey Programmable: Not Verified
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SKW07N120FKSA1 SKW07N120FKSA1 Infineon Technologies SKW07N120.pdf Description: IGBT 1200V 16.5A 125W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 60 ns
Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 8A
Supplier Device Package: PG-TO247-3-1
IGBT Type: NPT
Td (on/off) @ 25°C: 27ns/440ns
Switching Energy: 1mJ
Test Condition: 800V, 8A, 47Ohm, 15V
Gate Charge: 70 nC
Current - Collector (Ic) (Max): 16.5 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 27 A
Power - Max: 125 W
на замовлення 1682 шт:
термін постачання 21-31 дні (днів)
79+294.50 грн
Мінімальне замовлення: 79
В кошику  од. на суму  грн.
EVALISSI30R11HTOBO1 EVALISSI30R11HTOBO1 Infineon Technologies Infineon-UG-2023-18_EVAL_iSSI30R11H-UserManual-v01_00-EN.pdf?fileId=8ac78c8c8d1b852e018d2c5b86fe5c61 Description: EVAL BOARD FOR ISSI30R11H
Packaging: Box
Function: Isolator
Type: Interface
Utilized IC / Part: iSSI30R11H
Supplied Contents: Board(s)
Primary Attributes: 2.5V ~ 3.5V Input Voltage
Embedded: No
Contents: Board(s)
на замовлення 7 шт:
термін постачання 21-31 дні (днів)
1+14333.29 грн
В кошику  од. на суму  грн.
CYAT81685-100AA71Z CYAT81685-100AA71Z Infineon Technologies Infineon-CYAT81682-100AA61Z-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c82ce566401837edabc100b8b Description: PSOC BASED - TRUETOUCH
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Interface: I2C, SPI
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
Supplier Device Package: 100-TQFP (14x14)
Touchscreen: 2 Wire Capacitive
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
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IRFB4127PBFXKMA1 IRFB4127PBFXKMA1 Infineon Technologies IRFB4127PBF.pdf Description: MOSFET N-CH 200V 76A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 44A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5380 pF @ 50 V
на замовлення 793 шт:
термін постачання 21-31 дні (днів)
2+274.98 грн
10+173.45 грн
100+121.58 грн
500+93.30 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
BTS700201ESPXUMA2 BTS700201ESPXUMA2 Infineon Technologies Infineon-BTS70020-1ESP-DataSheet-v01_20-EN.pdf?fileId=5546d462758f5bd101759850731539ad Description: PROFET PG-TSDSO-24
Packaging: Cut Tape (CT)
Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: Relay, Solenoid Driver
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 2.3mOhm
Input Type: Non-Inverting
Voltage - Load: 4.1V ~ 28V
Voltage - Supply (Vcc/Vdd): 4.1V ~ 28V
Current - Output (Max): 23.2A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-24-32
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, Reverse Battery, UVLO
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
2+249.07 грн
10+180.21 грн
25+165.35 грн
100+139.85 грн
250+132.54 грн
500+128.13 грн
1000+122.47 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
FF5MR20KM1HPHPSA1 FF5MR20KM1HPHPSA1 Infineon Technologies Infineon-FF5MR20KM1HP-DataSheet-v00_10-EN.pdf?fileId=8ac78c8c8d2fe47b018dc623a8dc0d8c Description: MEDIUM POWER 62MM
Packaging: Tray
на замовлення 14 шт:
термін постачання 21-31 дні (днів)
1+30848.87 грн
В кошику  од. на суму  грн.
XC2365B40F80LAAKXUMA1 XC2365B40F80LAAKXUMA1 Infineon Technologies Infineon-SAK-XC2365B-40F80LR%20AB-DataSheet-v01_05-EN.pdf?fileId=5546d4626b2d8e69016b46cda5a330d0 Description: IC MCU 16/32B 320KB FLSH 100LQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 320KB (320K x 8)
RAM Size: 34K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 16x10b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-8
Number of I/O: 76
DigiKey Programmable: Not Verified
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PSB 6970 HL V1.3 PSB 6970 HL V1.3 Infineon Technologies PSB697x.pdf Description: IC TELECOM INTERFACE LQFP-100
Packaging: Tray
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Function: Ethernet Switch Controller
Interface: TX / FX
Voltage - Supply: 3.3V
Supplier Device Package: PG-LQFP-100
Number of Circuits: 1
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SAF-XE164HN-24F80L AA SAF-XE164HN-24F80L AA Infineon Technologies Infineon-SAK-XE164FN-40F80LR%20AB-DataSheet-v01_40-EN.pdf?fileId=8ac78c8c8d2fe47b018dc5cc3b160cb9 Description: IC MCU 16BIT 192KB FLASH 100LQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 192KB (192K x 8)
RAM Size: 26K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 16x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-8
Number of I/O: 75
DigiKey Programmable: Not Verified
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IPP011N03LF2SAKSA1 IPP011N03LF2SAKSA1 Infineon Technologies Infineon-IPP011N03LF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c901008d101902fe1fa872535 Description: TRENCH <= 40V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Ta), 210A (Tc)
Rds On (Max) @ Id, Vgs: 1.05mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 250µA
Supplier Device Package: PG-TO220-3-U05
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 336 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15100 pF @ 15 V
на замовлення 629 шт:
термін постачання 21-31 дні (днів)
2+216.47 грн
10+135.22 грн
100+94.10 грн
500+75.76 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPTC026N12NM6ATMA1 IPTC026N12NM6ATMA1 Infineon Technologies Infineon-IPTC026N12NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8d2fe47b018d35cc74f919ef Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 222A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 115A, 10V
Power Dissipation (Max): 3.8W (Ta), 278W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 169µA
Supplier Device Package: PG-HDSOP-16-2
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 60 V
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IPTC026N12NM6ATMA1 IPTC026N12NM6ATMA1 Infineon Technologies Infineon-IPTC026N12NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8d2fe47b018d35cc74f919ef Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 222A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 115A, 10V
Power Dissipation (Max): 3.8W (Ta), 278W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 169µA
Supplier Device Package: PG-HDSOP-16-2
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 60 V
на замовлення 552 шт:
термін постачання 21-31 дні (днів)
1+502.32 грн
10+358.00 грн
100+259.01 грн
500+219.65 грн
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IPQC60R040S7AXTMA1 IPQC60R040S7AXTMA1 Infineon Technologies Infineon-IPQC60R040S7A-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee0185150cb48e6cfc Description: MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 13A, 12V
Power Dissipation (Max): 272W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 790µA
Supplier Device Package: PG-HDSOP-22
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 12 V
Qualification: AEC-Q101
на замовлення 750 шт:
термін постачання 21-31 дні (днів)
750+381.32 грн
Мінімальне замовлення: 750
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IPQC60R040S7AXTMA1 IPQC60R040S7AXTMA1 Infineon Technologies Infineon-IPQC60R040S7A-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee0185150cb48e6cfc Description: MOSFET
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 13A, 12V
Power Dissipation (Max): 272W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 790µA
Supplier Device Package: PG-HDSOP-22
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 12 V
Qualification: AEC-Q101
на замовлення 750 шт:
термін постачання 21-31 дні (днів)
1+605.13 грн
10+499.33 грн
100+416.17 грн
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IRGS4062DTRLPBF IRGS4062DTRLPBF Infineon Technologies IRGS%28SL%294062DPbF.pdf Description: IGBT TRENCH 600V 48A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 89 ns
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 24A
Supplier Device Package: PG-TO263-3
IGBT Type: Trench
Td (on/off) @ 25°C: 41ns/104ns
Switching Energy: 115µJ (on), 600µJ (off)
Test Condition: 400V, 24A, 10Ohm, 15V
Gate Charge: 50 nC
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 96 A
Power - Max: 250 W
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IRF7458PBF IRF7458PBF Infineon Technologies irf7458pbf.pdf?fileId=5546d462533600a4015355fecb231bfe Description: MOSFET N-CH 30V 14A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 8mOhm @ 14A, 16V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 10V, 16V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 15 V
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S25FL256SDPMFV000 S25FL256SDPMFV000 Infineon Technologies Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17 Description: IC FLASH 256MBIT SPI/QUAD 16SOIC
Packaging: Tray
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 66 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Memory Interface: SPI - Quad I/O
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
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S29GL064N90TFA043
S29GL064N90TFA043
Виробник: Infineon Technologies
Description: IC FLASH 64MBIT PARALLEL 48TSOP
Packaging: Tape & Reel (TR)
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 48-TSOP
Grade: Automotive
Write Cycle Time - Word, Page: 90ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 8M x 8, 4M x 16
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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CY7C64013C-PXC
CY7C64013C-PXC
Виробник: Infineon Technologies
Description: IC MCU 8K FULL SPEED USB 28DIP
Packaging: Tube
Package / Case: 28-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Interface: I2C, USB, HAPI
RAM Size: 256 x 8
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4V ~ 5.25V
Controller Series: CY7C640xx
Program Memory Type: OTP (8kB)
Applications: USB Microcontroller
Core Processor: M8C
Supplier Device Package: 28-PDIP
Number of I/O: 19
DigiKey Programmable: Not Verified
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CY8C4124LQE-S413
CY8C4124LQE-S413
Виробник: Infineon Technologies
Description: IC MCU 32BIT 16KB FLASH 40UFQFN
Packaging: Tray
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b, 12x12b SAR; D/A 2x7b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 40-QFN (6x6)
Grade: Automotive
Number of I/O: 34
Qualification: AEC-Q100
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CY8C4124LQE-S413T
CY8C4124LQE-S413T
Виробник: Infineon Technologies
Description: IC MCU 32BIT 16KB FLASH 40UFQFN
Packaging: Tape & Reel (TR)
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b, 12x12b SAR; D/A 2x7b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 40-QFN (6x6)
Grade: Automotive
Number of I/O: 34
Qualification: AEC-Q100
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BSM75GB170DN2HOSA1 BSM75GB170DN2_Eupec.pdf
Виробник: Infineon Technologies
Description: IGBT MOD 1700V 110A 625W MOD
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 75A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 110 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 625 W
Input Capacitance (Cies) @ Vce: 11 nF @ 25 V
на замовлення 637 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+8291.50 грн
Мінімальне замовлення: 3
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TLE49614MXTMA1 Infineon-TLE4961_4M-DS-v01_00-en.pdf?fileId=db3a304340155f3d0140394b4fd67ddc
TLE49614MXTMA1
Виробник: Infineon Technologies
Description: MAG SWITCH IC HALL EFF SOT23-3
Packaging: Tape & Reel (TR)
Grade: Automotive
Qualification: AEC-Q100
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CY62128EV30LL-45SXIT Infineon-CY62128EV30_MoBL_1_Mbit_(128K_X_8)_Static_RAM-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe867f322f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY62128EV30LL-45SXIT
Виробник: Infineon Technologies
Description: IC SRAM 1MBIT PARALLEL 32SOIC
Packaging: Tape & Reel (TR)
Package / Case: 32-SOIC (0.445", 11.30mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-SOIC
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
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CY62128EV30LL-45SXIT Infineon-CY62128EV30_MoBL_1_Mbit_(128K_X_8)_Static_RAM-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe867f322f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY62128EV30LL-45SXIT
Виробник: Infineon Technologies
Description: IC SRAM 1MBIT PARALLEL 32SOIC
Packaging: Cut Tape (CT)
Package / Case: 32-SOIC (0.445", 11.30mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-SOIC
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
на замовлення 559 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+310.92 грн
10+265.36 грн
25+253.01 грн
50+229.06 грн
100+220.96 грн
250+210.69 грн
500+199.90 грн
Мінімальне замовлення: 2
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CY62128DV30LL-70ZXI CY62128DV30%20Rev2006.pdf
CY62128DV30LL-70ZXI
Виробник: Infineon Technologies
Description: IC SRAM 1MBIT PARALLEL 32TSOP I
Packaging: Tube
Package / Case: 32-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-TSOP I
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
на замовлення 891 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
128+180.70 грн
Мінімальне замовлення: 128
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CY62128DV30LL-70ZXI CY62128DV30%20Rev2006.pdf
CY62128DV30LL-70ZXI
Виробник: Infineon Technologies
Description: IC SRAM 1MBIT PARALLEL 32TSOP I
Packaging: Tube
Package / Case: 32-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-TSOP I
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
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IM66D120AXTMA1 Infineon-IM66D120A-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8c3de074018c63d5dd683a35
IM66D120AXTMA1
Виробник: Infineon Technologies
Description: MEMS GROWTH
Packaging: Tape & Reel (TR)
Output Type: Digital, PDM
Size / Dimension: 0.138" L x 0.104" W (3.50mm x 2.65mm)
Sensitivity: -26dB ±1dB @ 94dB SPL
Shape: Rectangular
Type: MEMS (Silicon)
S/N Ratio: 66dB
Termination: Solder Pads
Direction: Omnidirectional
Port Location: Bottom
Height (Max): 0.039" (0.99mm)
Voltage - Rated: 1.8 V
Current - Supply: 1.4 mA
Voltage Range: 1.62 V ~ 3.6 V
Frequency Range: 10 Hz ~ 10 kHz
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IM66D120AXTMA1 Infineon-IM66D120A-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8c3de074018c63d5dd683a35
IM66D120AXTMA1
Виробник: Infineon Technologies
Description: MEMS GROWTH
Packaging: Cut Tape (CT)
Output Type: Digital, PDM
Size / Dimension: 0.138" L x 0.104" W (3.50mm x 2.65mm)
Sensitivity: -26dB ±1dB @ 94dB SPL
Shape: Rectangular
Type: MEMS (Silicon)
S/N Ratio: 66dB
Termination: Solder Pads
Direction: Omnidirectional
Port Location: Bottom
Height (Max): 0.039" (0.99mm)
Voltage - Rated: 1.8 V
Current - Supply: 1.4 mA
Voltage Range: 1.62 V ~ 3.6 V
Frequency Range: 10 Hz ~ 10 kHz
на замовлення 4894 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+117.85 грн
10+92.48 грн
25+85.22 грн
50+75.20 грн
100+70.71 грн
250+67.47 грн
Мінімальне замовлення: 3
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S6E2C39J0AGB1000A download
S6E2C39J0AGB1000A
Виробник: Infineon Technologies
Description: IC MCU 32BIT 1.5MB FLASH 192FBGA
Packaging: Tray
Package / Case: 192-LFBGA
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 1.5MB (1.5M x 8)
RAM Size: 192K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 32x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, I2C, LINbus, SD, SPI, UART/USART, USB
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 192-FBGA (12x12)
Number of I/O: 152
DigiKey Programmable: Not Verified
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S6E2C38H0AGV2000A download
S6E2C38H0AGV2000A
Виробник: Infineon Technologies
Description: IC MCU 32BIT 1MB FLASH 144LQFP
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 24x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, I2C, LINbus, SD, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 144-LQFP (20x20)
Number of I/O: 120
DigiKey Programmable: Not Verified
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IPSA70R1K2P7SAKMA1 Infineon-IPSA70R1K2P7S-DS-v02_00-EN.pdf?fileId=5546d4625f2e26bc015f4d40e16a1340
IPSA70R1K2P7SAKMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 700V 4.5A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 900mA, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 40µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 400 V
Input Capacitance (Ciss) (Max) @ Vds: 174 pF @ 400 V
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
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62-0095PBF fundamentals-of-power-semiconductors
Виробник: Infineon Technologies
Description: MOSFET N-CH 20V 10A/12A 8SOIC
Packaging: Tube
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 12A (Tc)
Rds On (Max) @ Id, Vgs: 13.4mOhm @ 10A, 10V
Power Dissipation (Max): 2W
Vgs(th) (Max) @ Id: 2.55V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 10 V
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D2200N24TVFXPSA1 D2200N.pdf
D2200N24TVFXPSA1
Виробник: Infineon Technologies
Description: DIODE GEN PURP 2.4KV 2200A
Packaging: Tray
Package / Case: DO-200AC, K-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 2200A
Operating Temperature - Junction: -40°C ~ 160°C
Voltage - DC Reverse (Vr) (Max): 2400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 2000 A
Current - Reverse Leakage @ Vr: 150 mA @ 2400 V
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BSM15GD120DN2BOSA1
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 25A 145W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 15A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 145 W
Current - Collector Cutoff (Max): 500 µA
Input Capacitance (Cies) @ Vce: 100 pF @ 25 V
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IGB15N120S7ATMA1 Infineon-IGB15N120S7-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c914a3ac801917eb7408c326a
IGB15N120S7ATMA1
Виробник: Infineon Technologies
Description: IGBT TRENCH FS 1200V 34A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A
Supplier Device Package: PG-TO263-3-2
IGBT Type: Trench Field Stop
Test Condition: 600V, 15A, 10Ohm, 15V
Gate Charge: 97 nC
Current - Collector (Ic) (Max): 34 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 141 W
Td (on/off) @ 25°C: 16ns/156ns
Switching Energy: 900µJ (on), 680µJ (off)
на замовлення 589 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+322.62 грн
10+205.00 грн
100+145.04 грн
500+125.55 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
BGSX24M2U16E6327XTSA1 Infineon-BGSX24M2U16-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018dd17eaaed054c
BGSX24M2U16E6327XTSA1
Виробник: Infineon Technologies
Description: ANTENNA DEVICES
Packaging: Tape & Reel (TR)
Features: DC Blocked
Package / Case: 16-UFLGA Exposed Pad
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: DP4T
RF Type: 5G, LTE
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.1V ~ 1.3V, 1.65V ~ 1.95V
Insertion Loss: 1.14dB
Frequency Range: 400MHz ~ 7.125GHz
Topology: Absorptive
Test Frequency: 7.125GHz
Isolation: 35dB
Supplier Device Package: PG-ULGA-16-6
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AUIRFSL8408 AUIRFS%28L%298408.pdf
AUIRFSL8408
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 195A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 100A, 10V
Power Dissipation (Max): 294W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: TO-262
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 324 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10820 pF @ 25 V
на замовлення 450 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
146+147.99 грн
Мінімальне замовлення: 146
В кошику  од. на суму  грн.
ROTATEKNOB3D2GOKITTOBO1 ROTATEKNOB3D2GOKITTOBO1_Web.pdf
ROTATEKNOB3D2GOKITTOBO1
Виробник: Infineon Technologies
Description: ROTATE & PUSH BUTTON CONTROL ELE
Packaging: Bulk
For Use With/Related Products: 3D Magnetic Sensor
Accessory Type: Knob
на замовлення 6 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2144.69 грн
В кошику  од. на суму  грн.
IRGP4760DPBF IRGP4760D%28-E%29PbF.pdf
IRGP4760DPBF
Виробник: Infineon Technologies
Description: IGBT 650V 90A TO-247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 170 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 48A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 70ns/140ns
Switching Energy: 1.7mJ (on), 1mJ (off)
Test Condition: 400V, 48A, 10Ohm, 15V
Gate Charge: 145 nC
Current - Collector (Ic) (Max): 90 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 144 A
Power - Max: 325 W
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IRGP4760-EPBF IRGP4760%28-E%29PbF.pdf
IRGP4760-EPBF
Виробник: Infineon Technologies
Description: IGBT 650V 90A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 48A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 70ns/140ns
Switching Energy: 1.7mJ (on), 1mJ (off)
Test Condition: 400V, 48A, 10Ohm, 15V
Gate Charge: 145 nC
Current - Collector (Ic) (Max): 90 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 144 A
Power - Max: 325 W
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IRGP4760PBF IRGP4760%28-E%29PbF.pdf
IRGP4760PBF
Виробник: Infineon Technologies
Description: IGBT 650V 90A TO-247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 48A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 70ns/140ns
Switching Energy: 1.7mJ (on), 1mJ (off)
Test Condition: 400V, 48A, 10Ohm, 15V
Gate Charge: 145 nC
Current - Collector (Ic) (Max): 90 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 144 A
Power - Max: 325 W
товару немає в наявності
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BGS12WN6E6329XTSA1 3_cip11424.pdf
BGS12WN6E6329XTSA1
Виробник: Infineon Technologies
Description: IC RF SWITCH SPDT 9GHZ CELL WIFI
Packaging: Tape & Reel (TR)
Features: DC Blocked
Package / Case: 6-XFDFN
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: SPDT
RF Type: Bluetooth, UWB, WiFi, WLAN
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Insertion Loss: 1.12dB
Frequency Range: 50MHz ~ 9GHz
Topology: Reflective
Test Frequency: 9GHz
Isolation: 22dB
Supplier Device Package: PG-TSNP-6-2
IIP3: 70dBm
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
15000+10.68 грн
Мінімальне замовлення: 15000
В кошику  од. на суму  грн.
BGS12WN6E6329XTSA1 3_cip11424.pdf
BGS12WN6E6329XTSA1
Виробник: Infineon Technologies
Description: IC RF SWITCH SPDT 9GHZ CELL WIFI
Packaging: Cut Tape (CT)
Features: DC Blocked
Package / Case: 6-XFDFN
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: SPDT
RF Type: Bluetooth, UWB, WiFi, WLAN
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Insertion Loss: 1.12dB
Frequency Range: 50MHz ~ 9GHz
Topology: Reflective
Test Frequency: 9GHz
Isolation: 22dB
Supplier Device Package: PG-TSNP-6-2
IIP3: 70dBm
на замовлення 16405 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
18+19.22 грн
20+16.26 грн
25+15.32 грн
100+13.14 грн
250+12.38 грн
500+11.86 грн
1000+11.17 грн
5000+10.13 грн
Мінімальне замовлення: 18
В кошику  од. на суму  грн.
2ED3145MC12LXUMA1 Infineon-2ED314xMC12L-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c90530b3a019058e3ec3a2da2
2ED3145MC12LXUMA1
Виробник: Infineon Technologies
Description: 2ED3145MC12LXUMA1
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 6A, 6.5A
Technology: Capacitive Coupling
Current - Output High, Low: 6A, 6.5A
Voltage - Isolation: 5700Vrms
Approval Agency: UL
Supplier Device Package: PG-DSO-14-71
Rise / Fall Time (Typ): 20ns, 20ns (Max)
Common Mode Transient Immunity (Min): 200kV/µs
Propagation Delay tpLH / tpHL (Max): 40ns, 40ns
Number of Channels: 2
Voltage - Output Supply: 35V
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2ED3145MC12LXUMA1 Infineon-2ED314xMC12L-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c90530b3a019058e3ec3a2da2
2ED3145MC12LXUMA1
Виробник: Infineon Technologies
Description: 2ED3145MC12LXUMA1
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 6A, 6.5A
Technology: Capacitive Coupling
Current - Output High, Low: 6A, 6.5A
Voltage - Isolation: 5700Vrms
Approval Agency: UL
Supplier Device Package: PG-DSO-14-71
Rise / Fall Time (Typ): 20ns, 20ns (Max)
Common Mode Transient Immunity (Min): 200kV/µs
Propagation Delay tpLH / tpHL (Max): 40ns, 40ns
Number of Channels: 2
Voltage - Output Supply: 35V
на замовлення 1480 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+188.89 грн
10+134.81 грн
25+123.08 грн
100+103.40 грн
250+97.64 грн
500+94.16 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
CY7C024-25JXC CY7C024%2C41%2C025%2C0251%20RevC.pdf
CY7C024-25JXC
Виробник: Infineon Technologies
Description: IC SRAM 64KBIT PARALLEL 84PLCC
Packaging: Tube
Package / Case: 84-LCC (J-Lead)
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Dual Port, Asynchronous
Memory Format: SRAM
Supplier Device Package: 84-PLCC (29.31x29.31)
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Access Time: 25 ns
Memory Organization: 4K x 16
DigiKey Programmable: Not Verified
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CY7C0241-15AXC CY7C024%2CA%2C0241%2C%20CY7C025%2C0251.pdf
CY7C0241-15AXC
Виробник: Infineon Technologies
Description: IC SRAM 72KBIT PARALLEL 100TQFP
Packaging: Bulk
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 72Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Dual Port, Asynchronous
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x14)
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 4K x 18
DigiKey Programmable: Not Verified
на замовлення 848 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
18+1327.22 грн
Мінімальне замовлення: 18
В кошику  од. на суму  грн.
CY7C0241E-15AXC CY7C024%2C241%2C25%2C251E_RevA.pdf
CY7C0241E-15AXC
Виробник: Infineon Technologies
Description: IC SRAM 72KBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 72Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Dual Port, Asynchronous
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x14)
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 4K x 18
DigiKey Programmable: Not Verified
на замовлення 79 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1221.12 грн
10+1090.01 грн
25+1055.81 грн
В кошику  од. на суму  грн.
CY7C0241E-15AXI CY7C024%2C241%2C25%2C251E_RevA.pdf
CY7C0241E-15AXI
Виробник: Infineon Technologies
Description: IC SRAM 72KBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 72Kbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Dual Port, Asynchronous
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x14)
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 4K x 18
DigiKey Programmable: Not Verified
на замовлення 69 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1239.50 грн
10+1104.66 грн
25+1089.74 грн
40+1009.83 грн
В кошику  од. на суму  грн.
CY7C024-55AXC CY7C024%2CA%2C0241%2C%20CY7C025%2C0251.pdf
CY7C024-55AXC
Виробник: Infineon Technologies
Description: IC SRAM 64KBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Dual Port, Asynchronous
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x14)
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 4K x 16
DigiKey Programmable: Not Verified
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CY7C024-25AXC CY7C024%2CA%2C0241%2C%20CY7C025%2C0251.pdf
CY7C024-25AXC
Виробник: Infineon Technologies
Description: IC SRAM 64KBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Dual Port, Asynchronous
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x14)
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Access Time: 25 ns
Memory Organization: 4K x 16
DigiKey Programmable: Not Verified
товару немає в наявності
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CY7C024-25AXI CY7C024%2CA%2C0241%2C%20CY7C025%2C0251.pdf
CY7C024-25AXI
Виробник: Infineon Technologies
Description: IC SRAM 64KBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Dual Port, Asynchronous
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x14)
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Access Time: 25 ns
Memory Organization: 4K x 16
DigiKey Programmable: Not Verified
товару немає в наявності
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CY7C0241-25AXC CY7C024%2CA%2C0241%2C%20CY7C025%2C0251.pdf
CY7C0241-25AXC
Виробник: Infineon Technologies
Description: IC SRAM 72KBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 72Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Dual Port, Asynchronous
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x14)
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Access Time: 25 ns
Memory Organization: 4K x 18
DigiKey Programmable: Not Verified
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CY7C024A-25JXC CY7C024%2CA%2C0241%2C%20CY7C025%2C0251.pdf
CY7C024A-25JXC
Виробник: Infineon Technologies
Description: IC SRAM 64KBIT PARALLEL 84PLCC
Packaging: Tube
Package / Case: 84-LCC (J-Lead)
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Dual Port, Asynchronous
Memory Format: SRAM
Supplier Device Package: 84-PLCC (29.31x29.31)
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Access Time: 25 ns
Memory Organization: 4K x 16
DigiKey Programmable: Not Verified
товару немає в наявності
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CY7C0241-15AXI CY7C024%2CA%2C0241%2C%20CY7C025%2C0251.pdf
CY7C0241-15AXI
Виробник: Infineon Technologies
Description: IC SRAM 72KBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 72Kbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Dual Port, Asynchronous
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x14)
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 4K x 18
DigiKey Programmable: Not Verified
товару немає в наявності
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CY7C024-55AC CY7C024%2CA%2C0241%2C%20CY7C025%2C0251.pdf
CY7C024-55AC
Виробник: Infineon Technologies
Description: IC SRAM 64KBIT PARALLEL 100TQFP
Packaging: Bag
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Dual Port, Asynchronous
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x14)
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 4K x 16
DigiKey Programmable: Not Verified
товару немає в наявності
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CY7C024-15AC CY7C024%2CA%2C0241%2C%20CY7C025%2C0251.pdf
CY7C024-15AC
Виробник: Infineon Technologies
Description: IC SRAM 64KBIT PARALLEL 100TQFP
Packaging: Bag
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Dual Port, Asynchronous
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x14)
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 4K x 16
DigiKey Programmable: Not Verified
товару немає в наявності
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CY7C024AV-25AC CY7C0xxAV_RevH.pdf
CY7C024AV-25AC
Виробник: Infineon Technologies
Description: IC SRAM 64KBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Dual Port, Asynchronous
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x14)
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Access Time: 25 ns
Memory Organization: 4K x 16
DigiKey Programmable: Not Verified
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CY7C024AV-20AXCT CY7C024AV_25AV_26AV_RevT_8-1-17.pdf
CY7C024AV-20AXCT
Виробник: Infineon Technologies
Description: IC SRAM 64KBIT PARALLEL 100TQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Dual Port, Asynchronous
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x14)
Write Cycle Time - Word, Page: 20ns
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 4K x 16
DigiKey Programmable: Not Verified
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SKW07N120FKSA1 SKW07N120.pdf
SKW07N120FKSA1
Виробник: Infineon Technologies
Description: IGBT 1200V 16.5A 125W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 60 ns
Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 8A
Supplier Device Package: PG-TO247-3-1
IGBT Type: NPT
Td (on/off) @ 25°C: 27ns/440ns
Switching Energy: 1mJ
Test Condition: 800V, 8A, 47Ohm, 15V
Gate Charge: 70 nC
Current - Collector (Ic) (Max): 16.5 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 27 A
Power - Max: 125 W
на замовлення 1682 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
79+294.50 грн
Мінімальне замовлення: 79
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EVALISSI30R11HTOBO1 Infineon-UG-2023-18_EVAL_iSSI30R11H-UserManual-v01_00-EN.pdf?fileId=8ac78c8c8d1b852e018d2c5b86fe5c61
EVALISSI30R11HTOBO1
Виробник: Infineon Technologies
Description: EVAL BOARD FOR ISSI30R11H
Packaging: Box
Function: Isolator
Type: Interface
Utilized IC / Part: iSSI30R11H
Supplied Contents: Board(s)
Primary Attributes: 2.5V ~ 3.5V Input Voltage
Embedded: No
Contents: Board(s)
на замовлення 7 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+14333.29 грн
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CYAT81685-100AA71Z Infineon-CYAT81682-100AA61Z-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c82ce566401837edabc100b8b
CYAT81685-100AA71Z
Виробник: Infineon Technologies
Description: PSOC BASED - TRUETOUCH
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Interface: I2C, SPI
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
Supplier Device Package: 100-TQFP (14x14)
Touchscreen: 2 Wire Capacitive
Grade: Automotive
Qualification: AEC-Q100
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IRFB4127PBFXKMA1 IRFB4127PBF.pdf
IRFB4127PBFXKMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 200V 76A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 44A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5380 pF @ 50 V
на замовлення 793 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+274.98 грн
10+173.45 грн
100+121.58 грн
500+93.30 грн
Мінімальне замовлення: 2
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BTS700201ESPXUMA2 Infineon-BTS70020-1ESP-DataSheet-v01_20-EN.pdf?fileId=5546d462758f5bd101759850731539ad
BTS700201ESPXUMA2
Виробник: Infineon Technologies
Description: PROFET PG-TSDSO-24
Packaging: Cut Tape (CT)
Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: Relay, Solenoid Driver
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 2.3mOhm
Input Type: Non-Inverting
Voltage - Load: 4.1V ~ 28V
Voltage - Supply (Vcc/Vdd): 4.1V ~ 28V
Current - Output (Max): 23.2A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-24-32
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, Reverse Battery, UVLO
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+249.07 грн
10+180.21 грн
25+165.35 грн
100+139.85 грн
250+132.54 грн
500+128.13 грн
1000+122.47 грн
Мінімальне замовлення: 2
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FF5MR20KM1HPHPSA1 Infineon-FF5MR20KM1HP-DataSheet-v00_10-EN.pdf?fileId=8ac78c8c8d2fe47b018dc623a8dc0d8c
FF5MR20KM1HPHPSA1
Виробник: Infineon Technologies
Description: MEDIUM POWER 62MM
Packaging: Tray
на замовлення 14 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+30848.87 грн
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XC2365B40F80LAAKXUMA1 Infineon-SAK-XC2365B-40F80LR%20AB-DataSheet-v01_05-EN.pdf?fileId=5546d4626b2d8e69016b46cda5a330d0
XC2365B40F80LAAKXUMA1
Виробник: Infineon Technologies
Description: IC MCU 16/32B 320KB FLSH 100LQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 320KB (320K x 8)
RAM Size: 34K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 16x10b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-8
Number of I/O: 76
DigiKey Programmable: Not Verified
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PSB 6970 HL V1.3 PSB697x.pdf
PSB 6970 HL V1.3
Виробник: Infineon Technologies
Description: IC TELECOM INTERFACE LQFP-100
Packaging: Tray
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Function: Ethernet Switch Controller
Interface: TX / FX
Voltage - Supply: 3.3V
Supplier Device Package: PG-LQFP-100
Number of Circuits: 1
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SAF-XE164HN-24F80L AA Infineon-SAK-XE164FN-40F80LR%20AB-DataSheet-v01_40-EN.pdf?fileId=8ac78c8c8d2fe47b018dc5cc3b160cb9
SAF-XE164HN-24F80L AA
Виробник: Infineon Technologies
Description: IC MCU 16BIT 192KB FLASH 100LQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 192KB (192K x 8)
RAM Size: 26K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 16x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-8
Number of I/O: 75
DigiKey Programmable: Not Verified
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IPP011N03LF2SAKSA1 Infineon-IPP011N03LF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c901008d101902fe1fa872535
IPP011N03LF2SAKSA1
Виробник: Infineon Technologies
Description: TRENCH <= 40V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Ta), 210A (Tc)
Rds On (Max) @ Id, Vgs: 1.05mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 250µA
Supplier Device Package: PG-TO220-3-U05
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 336 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15100 pF @ 15 V
на замовлення 629 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+216.47 грн
10+135.22 грн
100+94.10 грн
500+75.76 грн
Мінімальне замовлення: 2
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IPTC026N12NM6ATMA1 Infineon-IPTC026N12NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8d2fe47b018d35cc74f919ef
IPTC026N12NM6ATMA1
Виробник: Infineon Technologies
Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 222A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 115A, 10V
Power Dissipation (Max): 3.8W (Ta), 278W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 169µA
Supplier Device Package: PG-HDSOP-16-2
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 60 V
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IPTC026N12NM6ATMA1 Infineon-IPTC026N12NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8d2fe47b018d35cc74f919ef
IPTC026N12NM6ATMA1
Виробник: Infineon Technologies
Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 222A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 115A, 10V
Power Dissipation (Max): 3.8W (Ta), 278W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 169µA
Supplier Device Package: PG-HDSOP-16-2
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 60 V
на замовлення 552 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+502.32 грн
10+358.00 грн
100+259.01 грн
500+219.65 грн
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IPQC60R040S7AXTMA1 Infineon-IPQC60R040S7A-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee0185150cb48e6cfc
IPQC60R040S7AXTMA1
Виробник: Infineon Technologies
Description: MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 13A, 12V
Power Dissipation (Max): 272W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 790µA
Supplier Device Package: PG-HDSOP-22
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 12 V
Qualification: AEC-Q101
на замовлення 750 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
750+381.32 грн
Мінімальне замовлення: 750
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IPQC60R040S7AXTMA1 Infineon-IPQC60R040S7A-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee0185150cb48e6cfc
IPQC60R040S7AXTMA1
Виробник: Infineon Technologies
Description: MOSFET
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 13A, 12V
Power Dissipation (Max): 272W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 790µA
Supplier Device Package: PG-HDSOP-22
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 12 V
Qualification: AEC-Q101
на замовлення 750 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+605.13 грн
10+499.33 грн
100+416.17 грн
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IRGS4062DTRLPBF IRGS%28SL%294062DPbF.pdf
IRGS4062DTRLPBF
Виробник: Infineon Technologies
Description: IGBT TRENCH 600V 48A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 89 ns
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 24A
Supplier Device Package: PG-TO263-3
IGBT Type: Trench
Td (on/off) @ 25°C: 41ns/104ns
Switching Energy: 115µJ (on), 600µJ (off)
Test Condition: 400V, 24A, 10Ohm, 15V
Gate Charge: 50 nC
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 96 A
Power - Max: 250 W
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IRF7458PBF irf7458pbf.pdf?fileId=5546d462533600a4015355fecb231bfe
IRF7458PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 14A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 8mOhm @ 14A, 16V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 10V, 16V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 15 V
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S25FL256SDPMFV000 Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17
S25FL256SDPMFV000
Виробник: Infineon Technologies
Description: IC FLASH 256MBIT SPI/QUAD 16SOIC
Packaging: Tray
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 66 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Memory Interface: SPI - Quad I/O
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
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