Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (149637) > Сторінка 727 з 2494
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FF150R17ME3GBOSA1 | Infineon Technologies |
Description: IGBT MOD 1700V 240A 1050WPackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: 2 Independent Operating Temperature: -40°C ~ 125°C Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 150A NTC Thermistor: Yes Supplier Device Package: Module IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 240 A Voltage - Collector Emitter Breakdown (Max): 1700 V Power - Max: 1050 W Current - Collector Cutoff (Max): 3 mA Input Capacitance (Cies) @ Vce: 13.5 nF @ 25 V |
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C161SLM3VAABXUMA1 | Infineon Technologies |
Description: SAB-C161S - LEGACY 16-BIT MICROCPackaging: Bulk Package / Case: 80-QFP Mounting Type: Surface Mount Speed: 20MHz RAM Size: 2K x 8 Operating Temperature: 0°C ~ 70°C (TA) Oscillator Type: External Program Memory Type: ROMless Core Processor: C166 Core Size: 16-Bit Voltage - Supply (Vcc/Vdd): 3V ~ 3.6V Connectivity: EBI/EMI, SPI, UART/USART Peripherals: POR, PWM, WDT Supplier Device Package: PG-MQFP-80-7 Number of I/O: 63 DigiKey Programmable: Not Verified |
на замовлення 2247 шт: термін постачання 21-31 дні (днів) |
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AUIRLR014NTRL | Infineon Technologies |
Description: MOSFET N-CH 55V 10A DPAKPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 140mOhm @ 6A, 10V Power Dissipation (Max): 28W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252AA (DPAK) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 7.9 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 265 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
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IRF3007PBF | Infineon Technologies |
Description: MOSFET N-CH 75V 75A TO220ABPackaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 12.6mOhm @ 48A, 10V Power Dissipation (Max): 200W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3270 pF @ 25 V |
на замовлення 4927 шт: термін постачання 21-31 дні (днів) |
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| 2SD106AI17ULHPSA1 | Infineon Technologies |
Description: MODULE GATE DRIVER Packaging: Tray |
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CYPD2120-24LQXI | Infineon Technologies |
Description: IC USB TYPE C 1-PORT 24QFNPackaging: Bulk Package / Case: 24-UFQFN Exposed Pad Mounting Type: Surface Mount Interface: I2C, SPI, UART/USART, USB RAM Size: 4K x 8 Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.71V ~ 5.5V Program Memory Type: FLASH (32kB) Applications: USB Type C Core Processor: ARM® Cortex®-M0 Supplier Device Package: 24-QFN (4x4) Number of I/O: 14 DigiKey Programmable: Not Verified |
на замовлення 1018 шт: термін постачання 21-31 дні (днів) |
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TDA22590XUMA1 | Infineon Technologies |
Description: POWERSTAGE CEPackaging: Tape & Reel (TR) Package / Case: 34-PowerUFLGA Voltage - Output: 0.225V ~ 5.5V Mounting Type: Surface Mount Number of Outputs: 1 Voltage - Input: 4.25V ~ 16V Operating Temperature: -40°C ~ 125°C Applications: Converter, CPU GPU Supplier Device Package: PG-UFLGA-34 |
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| TDA22594AXUMA1 | Infineon Technologies |
Description: POWERSTAGE CE Packaging: Tape & Reel (TR) |
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CY14B256PA-SFXI | Infineon Technologies |
Description: IC NVSRAM 256KBIT SPI 16SOICPackaging: Tube Package / Case: 16-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Memory Size: 256Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: NVSRAM (Non-Volatile SRAM) Clock Frequency: 40 MHz Memory Format: NVSRAM Supplier Device Package: 16-SOIC Memory Interface: SPI Memory Organization: 32K x 8 DigiKey Programmable: Not Verified |
на замовлення 456 шт: термін постачання 21-31 дні (днів) |
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| AUXHBFB3306 | Infineon Technologies |
Description: IC MEMORY Packaging: Bulk |
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CY7C63231A-SC | Infineon Technologies |
Description: IC MCU 3K USB LS PERIPH 18-SOICPackaging: Tube Package / Case: 18-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Interface: USB RAM Size: 96 x 8 Operating Temperature: 0°C ~ 70°C Voltage - Supply: 3.5V ~ 5.5V Controller Series: CY7C632xx Program Memory Type: OTP (3kB) Applications: USB Microcontroller Core Processor: M8B Supplier Device Package: 18-SOIC Number of I/O: 10 DigiKey Programmable: Not Verified |
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IPS60R1K0PFD7SAKMA1 | Infineon Technologies |
Description: MOSFET N-CH 650V 4.7A TO251-3Packaging: Bulk Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc) Rds On (Max) @ Id, Vgs: 1Ohm @ 1A, 10V Power Dissipation (Max): 26W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 50µA Supplier Device Package: PG-TO251-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 400 V |
на замовлення 64370 шт: термін постачання 21-31 дні (днів) |
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IPS60R210PFD7SAKMA1 | Infineon Technologies |
Description: MOSFET N-CH 650V 16A TO251-3Packaging: Bulk Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Rds On (Max) @ Id, Vgs: 210mOhm @ 4.9A, 10V Power Dissipation (Max): 64W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 240µA Supplier Device Package: PG-TO251-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1015 pF @ 400 V |
на замовлення 5569 шт: термін постачання 21-31 дні (днів) |
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IPU95R2K0P7AKMA1 | Infineon Technologies |
Description: MOSFET N-CH 950V 4A TO251-3Packaging: Bulk Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 2Ohm @ 1.7A, 10V Power Dissipation (Max): 37W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 80µA Supplier Device Package: PG-TO251-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 950 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 400 V |
на замовлення 23457 шт: термін постачання 21-31 дні (днів) |
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IRFZ46ZSTRLPBF | Infineon Technologies |
Description: MOSFET N-CH 55V 51A D2PAKPackaging: Bulk Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 51A (Tc) Rds On (Max) @ Id, Vgs: 13.6mOhm @ 31A, 10V Power Dissipation (Max): 82W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1460 pF @ 25 V |
на замовлення 3616 шт: термін постачання 21-31 дні (днів) |
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ISC110N12NM6ATMA1 | Infineon Technologies |
Description: TRENCH >=100VPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 62A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 26A, 10V Power Dissipation (Max): 3W (Ta), 94W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 35µA Supplier Device Package: SuperSO8 Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 120 V Gate Charge (Qg) (Max) @ Vgs: 19.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 60 V |
на замовлення 4652 шт: термін постачання 21-31 дні (днів) |
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DZ1100N22KHPSA2 | Infineon Technologies |
Description: DIODE GP 2.2KV 1100A MODULEPackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 1100A Supplier Device Package: Module Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 2200 V Voltage - Forward (Vf) (Max) @ If: 1.11 V @ 3000 A Current - Reverse Leakage @ Vr: 80 mA @ 2200 V |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
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IRFB7440GPBF | Infineon Technologies |
Description: MOSFET N CH 40V 120A TO220ABPackaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 100A, 10V Power Dissipation (Max): 208W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 100µA Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4730 pF @ 25 V |
на замовлення 1450 шт: термін постачання 21-31 дні (днів) |
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AUIRFS4610 | Infineon Technologies |
Description: MOSFET N-CH 100V 73A D2PAKPackaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 73A (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 44A, 10V Power Dissipation (Max): 190W (Tc) Vgs(th) (Max) @ Id: 4V @ 100µA Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3550 pF @ 50 V Grade: Automotive Qualification: AEC-Q101 |
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CY7C25632KV18-500BZXC | Infineon Technologies |
Description: IC SRAM 72MBIT PAR 165FBGAPackaging: Tray Package / Case: 165-LBGA Mounting Type: Surface Mount Memory Size: 72Mbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 1.7V ~ 1.9V Technology: SRAM - Synchronous, QDR II+ Clock Frequency: 500 MHz Memory Format: SRAM Supplier Device Package: 165-FBGA (13x15) Memory Interface: Parallel Memory Organization: 4M x 18 DigiKey Programmable: Not Verified |
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S29AS016J70BHI043 | Infineon Technologies |
Description: IC FLASH 16MBIT PARALLEL 48FBGAPackaging: Tape & Reel (TR) Package / Case: 48-VFBGA Mounting Type: Surface Mount Memory Size: 16Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 1.95V Technology: FLASH - NOR Memory Format: FLASH Supplier Device Package: 48-FBGA (8.15x6.15) Write Cycle Time - Word, Page: 70ns Memory Interface: Parallel Access Time: 70 ns Memory Organization: 2M x 8, 1M x 16 DigiKey Programmable: Not Verified |
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S29GL064S70BHI043 | Infineon Technologies |
Description: IC FLASH 64MBIT PARALLEL 48FBGAPackaging: Tape & Reel (TR) Package / Case: 48-VFBGA Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Memory Format: FLASH Supplier Device Package: 48-FBGA (8.15x6.15) Write Cycle Time - Word, Page: 60ns Memory Interface: Parallel Access Time: 70 ns Memory Organization: 8M x 8, 4M x 16 DigiKey Programmable: Not Verified |
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S29GL064S90FHI040 | Infineon Technologies |
Description: IC FLASH 64MBIT PARALLEL 64FBGAPackaging: Tray Package / Case: 64-LBGA Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Memory Format: FLASH Supplier Device Package: 64-FBGA (13x11) Grade: Automotive Write Cycle Time - Word, Page: 60ns Memory Interface: Parallel Access Time: 90 ns Memory Organization: 8M x 8, 4M x 16 DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
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S29GL064S90BHI043 | Infineon Technologies |
Description: IC FLASH 64MBIT PARALLEL 48FBGAPackaging: Tape & Reel (TR) Package / Case: 48-VFBGA Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Memory Format: FLASH Supplier Device Package: 48-FBGA (8.15x6.15) Grade: Automotive Write Cycle Time - Word, Page: 60ns Memory Interface: Parallel Access Time: 90 ns Memory Organization: 8M x 8, 4M x 16 DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
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S29GL064S90BHI040 | Infineon Technologies |
Description: IC FLASH 64MBIT PARALLEL 48FBGAPackaging: Tray Package / Case: 48-VFBGA Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Memory Format: FLASH Supplier Device Package: 48-FBGA (8.15x6.15) Grade: Automotive Write Cycle Time - Word, Page: 60ns Memory Interface: Parallel Access Time: 90 ns Memory Organization: 8M x 8, 4M x 16 DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
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IDD09SG60CXTMA2 | Infineon Technologies |
Description: DIODE SIL CARB 600V 9A PGTO2523Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 280pF @ 1V, 1MHz Current - Average Rectified (Io): 9A Supplier Device Package: PG-TO252-3 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 9 A Current - Reverse Leakage @ Vr: 80 µA @ 600 V |
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CY7C13451G-100BZXE | Infineon Technologies |
Description: IC SRAM 4MBIT PAR 165FBGAPackaging: Bulk Package / Case: 165-LBGA Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 3.135V ~ 3.6V Technology: SRAM - Synchronous, SDR Clock Frequency: 100 MHz Memory Format: SRAM Supplier Device Package: 165-FBGA (13x15) Memory Interface: Parallel Access Time: 8 ns Memory Organization: 128K x 36 DigiKey Programmable: Not Verified |
на замовлення 259 шт: термін постачання 21-31 дні (днів) |
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| AUIRG4PH50SXKMA1 | Infineon Technologies |
Description: DISCRETE SWITCHES Packaging: Tube |
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CHL8325A-03CRT | Infineon Technologies |
Description: IC REG BUCK 40VQFNPackaging: Tape & Reel (TR) Package / Case: 40-VFQFN Exposed Pad Output Type: PWM Mounting Type: Surface Mount Function: Step-Down Operating Temperature: -20°C ~ 85°C (TA) Output Configuration: Positive Frequency - Switching: 200kHz ~ 1.2MHz Topology: Buck Voltage - Supply (Vcc/Vdd): 3.3V Supplier Device Package: PG-VQFN-40-902 Synchronous Rectifier: No Control Features: Enable, Power Good Serial Interfaces: I2C, PMBus, SMBus Output Phases: 5 Clock Sync: No Number of Outputs: 5 |
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FF225R12ME4PBPSA1 | Infineon Technologies |
Description: IGBT MOD 1200V 450A 20MWPackaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Half Bridge Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 225A NTC Thermistor: Yes Supplier Device Package: Module IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 450 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 20 mW Current - Collector Cutoff (Max): 3 mA Input Capacitance (Cies) @ Vce: 13 nF @ 25 V |
на замовлення 316 шт: термін постачання 21-31 дні (днів) |
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S29GL512T10TFI013 | Infineon Technologies |
Description: IC FLASH 512MBIT PARALLEL 56TSOPPackaging: Tape & Reel (TR) Package / Case: 56-TFSOP (0.724", 18.40mm Width) Mounting Type: Surface Mount Memory Size: 512Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Memory Format: FLASH Supplier Device Package: 56-TSOP Write Cycle Time - Word, Page: 60ns Memory Interface: Parallel Access Time: 100 ns Memory Organization: 64M x 8 DigiKey Programmable: Not Verified |
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S29GL512T10TFI013 | Infineon Technologies |
Description: IC FLASH 512MBIT PARALLEL 56TSOPPackaging: Cut Tape (CT) Package / Case: 56-TFSOP (0.724", 18.40mm Width) Mounting Type: Surface Mount Memory Size: 512Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Memory Format: FLASH Supplier Device Package: 56-TSOP Write Cycle Time - Word, Page: 60ns Memory Interface: Parallel Access Time: 100 ns Memory Organization: 64M x 8 DigiKey Programmable: Not Verified |
на замовлення 490 шт: термін постачання 21-31 дні (днів) |
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EVALFFXMR20KM1HDRTOBO1 | Infineon Technologies |
Description: EVAL BOARD FOR FF3MR20KM1HPackaging: Box Function: MOSFET Type: Power Management Utilized IC / Part: FF3MR20KM1H, FF4MR20KM1H, FF6MR20KM1H Supplied Contents: Board(s) Primary Attributes: Isolated Embedded: Yes, MCU Secondary Attributes: On-Board LEDs Contents: Board(s) |
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FF4MR12W2M1HB11BPSA1 | Infineon Technologies |
Description: SIC 2N-CH 1200V 170A MODULEPackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 170A (Tj) Input Capacitance (Ciss) (Max) @ Vds: 17600pF @ 800V Rds On (Max) @ Id, Vgs: 4mOhm @ 200A, 18V Gate Charge (Qg) (Max) @ Vgs: 594nC @ 18V Vgs(th) (Max) @ Id: 5.15V @ 80mA Supplier Device Package: Module |
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FF75R12W1T7EB11BPSA1 | Infineon Technologies |
Description: EASY STANDARDPackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Half Bridge Inverter Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 75A NTC Thermistor: Yes Supplier Device Package: AG-EASY1B IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 65 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 20 mW Current - Collector Cutoff (Max): 5.6 µA Input Capacitance (Cies) @ Vce: 15100 pF @ 25 V |
на замовлення 24 шт: термін постачання 21-31 дні (днів) |
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CY15V108QN-20LPXI | Infineon Technologies |
Description: IC FRAM 8MBIT SPI 20MHZ 8GQFNPackaging: Tray Package / Case: 8-UQFN Mounting Type: Surface Mount Memory Size: 8Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.71V ~ 1.89V Technology: FRAM (Ferroelectric RAM) Clock Frequency: 20 MHz Memory Format: FRAM Supplier Device Package: 8-GQFN (3.23x3.28) Memory Interface: SPI Memory Organization: 1M x 8 DigiKey Programmable: Not Verified |
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CY15V108QI-20LPXC | Infineon Technologies |
Description: IC FRAM 8MBIT SPI 20MHZ 8GQFNPackaging: Tray Package / Case: 8-UQFN Mounting Type: Surface Mount Memory Size: 8Mbit Memory Type: Non-Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 1.71V ~ 1.89V Technology: FRAM (Ferroelectric RAM) Clock Frequency: 20 MHz Memory Format: FRAM Supplier Device Package: 8-GQFN (3.23x3.28) Memory Interface: SPI Memory Organization: 1M x 8 DigiKey Programmable: Not Verified |
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ESD8V0L1B-02LRH E6433 | Infineon Technologies |
Description: TVS DIODE 14VWM 21VC TSLP-2Packaging: Tape & Reel (TR) Package / Case: SOD-882 Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 125°C (TJ) Applications: General Purpose Capacitance @ Frequency: 8.5pF @ 1MHz Current - Peak Pulse (10/1000µs): 2.5A (8/20µs) Voltage - Reverse Standoff (Typ): 14V (Max) Supplier Device Package: PG-TSLP-2-17 Bidirectional Channels: 1 Voltage - Breakdown (Min): 14.5V (Typ) Voltage - Clamping (Max) @ Ipp: 21V (Typ) Power Line Protection: No |
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IMBG120R116M2HXTMA1 | Infineon Technologies |
Description: SIC DISCRETEPackaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21.2A (Tc) Rds On (Max) @ Id, Vgs: 115.7mOhm @ 6A, 18V Power Dissipation (Max): 123W (Tc) Vgs(th) (Max) @ Id: 5.1V @ 1.9mA Supplier Device Package: PG-TO263-7-12 Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +23V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 14.4 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 800 V |
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IMBG120R116M2HXTMA1 | Infineon Technologies |
Description: SIC DISCRETEPackaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21.2A (Tc) Rds On (Max) @ Id, Vgs: 115.7mOhm @ 6A, 18V Power Dissipation (Max): 123W (Tc) Vgs(th) (Max) @ Id: 5.1V @ 1.9mA Supplier Device Package: PG-TO263-7-12 Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +23V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 14.4 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 800 V |
на замовлення 495 шт: термін постачання 21-31 дні (днів) |
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IPB80N06S2L09ATMA2 | Infineon Technologies |
Description: MOSFET N-CH 55V 80A TO263-3Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 8.2mOhm @ 52A, 10V Power Dissipation (Max): 190W (Tc) Vgs(th) (Max) @ Id: 2V @ 125µA Supplier Device Package: PG-TO263-3-2 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2620 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
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IM240M6Z1BALMA1 | Infineon Technologies |
Description: IGBT MODULE 600V 8.9W 23SOPPackaging: Tube Package / Case: 23-PowerSMD Module, Gull Wing Mounting Type: Surface Mount Input: Standard Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 125°C Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 4A NTC Thermistor: Yes Supplier Device Package: 23-SOP Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 8.9 W Current - Collector Cutoff (Max): 40 µA |
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IR2011PBF | Infineon Technologies |
Description: IC GATE DRVR HI/LOW SIDE 8DIPPackaging: Tube Package / Case: 8-DIP (0.300", 7.62mm) Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 10V ~ 20V Input Type: Inverting High Side Voltage - Max (Bootstrap): 200 V Supplier Device Package: 8-PDIP Rise / Fall Time (Typ): 35ns, 20ns Channel Type: Independent Driven Configuration: High-Side or Low-Side Number of Drivers: 2 Gate Type: MOSFET (N-Channel) Logic Voltage - VIL, VIH: 0.7V, 2.2V Current - Peak Output (Source, Sink): 1A, 1A DigiKey Programmable: Not Verified |
на замовлення 582 шт: термін постачання 21-31 дні (днів) |
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CY8C4247LTQ-M475 | Infineon Technologies |
Description: IC MCU 32BIT 128KB FLASH 68VFQFNPackaging: Tray Package / Case: 68-VFQFN Exposed Pad Mounting Type: Surface Mount Speed: 48MHz Program Memory Size: 128KB (128K x 8) RAM Size: 16K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0 Data Converters: A/D 1x12b SAR; D/A 4x8b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART Peripherals: Brown-out Detect/Reset, Cap Sense, LCD, LVD, POR, PWM, SmartSense, WDT Supplier Device Package: 68-QFN (8x8) Number of I/O: 55 DigiKey Programmable: Not Verified |
на замовлення 520 шт: термін постачання 21-31 дні (днів) |
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CY8C4247BZI-L479 | Infineon Technologies |
Description: IC MCU 32BIT 128KB FLSH 124VFBGAPackaging: Tray Package / Case: 124-VFBGA Mounting Type: Surface Mount Speed: 48MHz Program Memory Size: 128KB (128K x 8) RAM Size: 16K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0 Data Converters: A/D 16x12b; D/A 2x7b, 2x8b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART, USB Peripherals: Brown-out Detect/Reset, CapSense, DMA, LCD, LVD, POR, PWM, SmartSense, WDT Supplier Device Package: 124-VFBGA (9x9) Number of I/O: 98 DigiKey Programmable: Not Verified |
на замовлення 1240 шт: термін постачання 21-31 дні (днів) |
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CY8C4247FNI-BL493T | Infineon Technologies |
Description: IC MCU 32BIT 128KB FLASH 68WLCSPPackaging: Tape & Reel (TR) Package / Case: 68-UFBGA, WLCSP Mounting Type: Surface Mount Speed: 48MHz Program Memory Size: 128KB (128K x 8) RAM Size: 16K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0 Data Converters: A/D 8x12b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART Peripherals: Bluetooth, Brown-out Detect/Reset, Cap Sense, LCD, LVD, POR, PWM, SmartCard, SmartSense, WDT Supplier Device Package: 68-WLCSP (3.52x3.91) Number of I/O: 36 DigiKey Programmable: Not Verified |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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CY8C4247FNI-BL493T | Infineon Technologies |
Description: IC MCU 32BIT 128KB FLASH 68WLCSPPackaging: Cut Tape (CT) Package / Case: 68-UFBGA, WLCSP Mounting Type: Surface Mount Speed: 48MHz Program Memory Size: 128KB (128K x 8) RAM Size: 16K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0 Data Converters: A/D 8x12b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART Peripherals: Bluetooth, Brown-out Detect/Reset, Cap Sense, LCD, LVD, POR, PWM, SmartCard, SmartSense, WDT Supplier Device Package: 68-WLCSP (3.52x3.91) Number of I/O: 36 DigiKey Programmable: Not Verified |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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CY8C4247AZA-M475T | Infineon Technologies |
Description: IC MCU 32BIT 128KB FLASH 64LQFP Packaging: Tape & Reel (TR) Package / Case: 64-LQFP Mounting Type: Surface Mount Speed: 48MHz Program Memory Size: 128KB (128K x 8) RAM Size: 16K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: External, Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0 Data Converters: A/D 16x12b SAR; D/A 4x7/8b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART Peripherals: Brown-out Detect/Reset, DMA, LCD, LVD, POR, PWM, Temp Sensor, WDT Supplier Device Package: 64-TQFP (10x10) Grade: Automotive Number of I/O: 51 Qualification: AEC-Q100 |
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CY8C4247AZA-M475 | Infineon Technologies |
Description: IC MCU 32BIT 128KB FLASH 64LQFP Packaging: Tray Package / Case: 64-LQFP Mounting Type: Surface Mount Speed: 48MHz Program Memory Size: 128KB (128K x 8) RAM Size: 16K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: External, Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0 Data Converters: A/D 24x12b SAR; D/A 4x7/8b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART Peripherals: Brown-out Detect/Reset, LCD, LVD, POR, PWM, SmartSense, WDT Supplier Device Package: 64-TQFP (10x10) Grade: Automotive Number of I/O: 51 Qualification: AEC-Q100 |
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В кошику од. на суму грн. | ||||||||||||||
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CY8C4247LWA-M484T | Infineon Technologies |
Description: IC MCU 32BIT 128KB FLASH 56VFQFN Packaging: Tape & Reel (TR) Package / Case: 56-VFQFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Speed: 48MHz Program Memory Size: 128KB (128K x 8) RAM Size: 16K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: External, Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0 Data Converters: A/D 16x12b SAR; D/A 4x7/8b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART Peripherals: Brown-out Detect/Reset, Cap Sense, DMA, LCD, LVD, POR, PWM, SmartSense, Temp Sensor, WDT Supplier Device Package: 56-QFN-EP (8x8) Grade: Automotive Number of I/O: 46 Qualification: AEC-Q100 |
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CY8C4247LWA-M484 | Infineon Technologies |
Description: IC MCU 32BIT 128KB FLASH 56VFQFN Packaging: Tray Package / Case: 56-VFQFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Speed: 48MHz Program Memory Size: 128KB (128K x 8) RAM Size: 16K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: External, Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0 Data Converters: A/D 24x12b SAR; D/A 4x7/8b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Connectivity: CANbus, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART Peripherals: Brown-out Detect/Reset, Cap Sense, LCD, LVD, POR, PWM, SmartSense, WDT Supplier Device Package: 56-QFN-EP (8x8) Grade: Automotive Number of I/O: 46 Qualification: AEC-Q100 |
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CY8C4247AZA-M483 | Infineon Technologies |
Description: IC MCU 32BIT 128KB FLASH 48LQFP Packaging: Tray Package / Case: 48-LQFP Mounting Type: Surface Mount Speed: 48MHz Program Memory Size: 128KB (128K x 8) RAM Size: 16K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: External, Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0 Data Converters: A/D 24x12b SAR; D/A 4x7/8b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Connectivity: CANbus, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART Peripherals: Brown-out Detect/Reset, Cap Sense, LCD, LVD, POR, PWM, SmartSense, WDT Supplier Device Package: 48-TQFP (7x7) Grade: Automotive Number of I/O: 38 Qualification: AEC-Q100 |
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В кошику од. на суму грн. | ||||||||||||||
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CY8C4247AZS-M475T | Infineon Technologies |
Description: PSOC4 - GENERAL Packaging: Tape & Reel (TR) Package / Case: 64-LQFP Mounting Type: Surface Mount Speed: 48MHz Program Memory Size: 128KB (128K x 8) RAM Size: 16K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: External, Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0 Data Converters: A/D 16x12b SAR; D/A 4x7/8b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART Peripherals: Brown-out Detect/Reset, DMA, LCD, LVD, POR, PWM, Temp Sensor, WDT Supplier Device Package: 64-TQFP (10x10) Grade: Automotive Number of I/O: 51 Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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CY8C4247AZS-M475 | Infineon Technologies |
Description: IC MCU 32BIT 128KB FLASH 64LQFPPackaging: Tray Package / Case: 64-LQFP Mounting Type: Surface Mount Speed: 48MHz Program Memory Size: 128KB (128K x 8) RAM Size: 16K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: External, Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0 Data Converters: A/D 24x12b SAR; D/A 4x7/8b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART Peripherals: Brown-out Detect/Reset, LCD, LVD, POR, PWM, SmartSense, WDT Supplier Device Package: 64-TQFP (10x10) Grade: Automotive Number of I/O: 51 Qualification: AEC-Q100 |
на замовлення 1600 шт: термін постачання 21-31 дні (днів) |
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CY8C4247LWS-M484T | Infineon Technologies |
Description: PSOC4 - GENERAL Packaging: Tape & Reel (TR) Package / Case: 56-VFQFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Speed: 48MHz Program Memory Size: 128KB (128K x 8) RAM Size: 16K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: External, Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0 Data Converters: A/D 16x12b SAR; D/A 4x7/8b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART Peripherals: Brown-out Detect/Reset, Cap Sense, DMA, LCD, LVD, POR, PWM, SmartSense, Temp Sensor, WDT Supplier Device Package: 56-QFN-EP (8x8) Grade: Automotive Number of I/O: 46 Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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CY8C4247AZS-M483 | Infineon Technologies |
Description: IC MCU 32BIT 128KB FLASH 64LQFPPackaging: Tray Package / Case: 64-LQFP Mounting Type: Surface Mount Speed: 48MHz Program Memory Size: 128KB (128K x 8) RAM Size: 16K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: External, Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0 Data Converters: A/D 24x12b SAR; D/A 4x7/8b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Connectivity: CANbus, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART Peripherals: Brown-out Detect/Reset, Cap Sense, LCD, LVD, POR, PWM, SmartSense, WDT Supplier Device Package: 64-TQFP (10x10) Grade: Automotive Number of I/O: 38 Qualification: AEC-Q100 |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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TT250N16KOFHPSA1 | Infineon Technologies |
Description: SCR MODULE 1.6KV MODULEPackaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 125°C Structure: Series Connection - All SCRs Current - Hold (Ih) (Max): 300 mA Current - Gate Trigger (Igt) (Max): 200 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 8000A @ 50Hz Number of SCRs, Diodes: 2 SCRs Current - On State (It (AV)) (Max): 250 A Voltage - Gate Trigger (Vgt) (Max): 2 V Voltage - Off State: 1.6 kV |
на замовлення 28 шт: термін постачання 21-31 дні (днів) |
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IKD06N60RAATMA2 | Infineon Technologies |
Description: IGBT TRENCH 600V 12A TO252-3Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 68 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 6A Supplier Device Package: PG-TO252-3 IGBT Type: Trench Td (on/off) @ 25°C: 12ns/127ns Test Condition: 400V, 6A, 23Ohm, 15V Gate Charge: 48 nC Current - Collector (Ic) (Max): 12 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 18 A Power - Max: 100 W |
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В кошику од. на суму грн. | ||||||||||||||
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CY22050KFI | Infineon Technologies |
Description: IC CLOCK GEN PROG 16-TSSOPPackaging: Tube Package / Case: 16-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Output: CMOS Frequency - Max: 150MHz, 166.6MHz Type: Clock Generator, Fanout Distribution Input: LVCMOS, LVTTL, Crystal Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2.5V, 3.3V Ratio - Input:Output: 1:6 Differential - Input:Output: No/No Supplier Device Package: 16-TSSOP PLL: Yes with Bypass Divider/Multiplier: Yes/No Number of Circuits: 1 DigiKey Programmable: Not Verified |
на замовлення 960 шт: термін постачання 21-31 дні (днів) |
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CY22050KZXC-149 | Infineon Technologies |
Description: IC CLOCK GENERATORPackaging: Tube Package / Case: 16-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Supplier Device Package: 16-TSSOP DigiKey Programmable: Not Verified |
на замовлення 781 шт: термін постачання 21-31 дні (днів) |
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| FF150R17ME3GBOSA1 |
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Виробник: Infineon Technologies
Description: IGBT MOD 1700V 240A 1050W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 150A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 240 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 1050 W
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 13.5 nF @ 25 V
Description: IGBT MOD 1700V 240A 1050W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 150A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 240 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 1050 W
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 13.5 nF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| C161SLM3VAABXUMA1 |
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Виробник: Infineon Technologies
Description: SAB-C161S - LEGACY 16-BIT MICROC
Packaging: Bulk
Package / Case: 80-QFP
Mounting Type: Surface Mount
Speed: 20MHz
RAM Size: 2K x 8
Operating Temperature: 0°C ~ 70°C (TA)
Oscillator Type: External
Program Memory Type: ROMless
Core Processor: C166
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 3.6V
Connectivity: EBI/EMI, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: PG-MQFP-80-7
Number of I/O: 63
DigiKey Programmable: Not Verified
Description: SAB-C161S - LEGACY 16-BIT MICROC
Packaging: Bulk
Package / Case: 80-QFP
Mounting Type: Surface Mount
Speed: 20MHz
RAM Size: 2K x 8
Operating Temperature: 0°C ~ 70°C (TA)
Oscillator Type: External
Program Memory Type: ROMless
Core Processor: C166
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 3.6V
Connectivity: EBI/EMI, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: PG-MQFP-80-7
Number of I/O: 63
DigiKey Programmable: Not Verified
на замовлення 2247 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 67+ | 341.26 грн |
| AUIRLR014NTRL |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 10A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 6A, 10V
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 7.9 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 265 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 55V 10A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 6A, 10V
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 7.9 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 265 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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| IRF3007PBF | ![]() |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 75V 75A TO220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 12.6mOhm @ 48A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3270 pF @ 25 V
Description: MOSFET N-CH 75V 75A TO220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 12.6mOhm @ 48A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3270 pF @ 25 V
на замовлення 4927 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 231+ | 91.68 грн |
| CYPD2120-24LQXI |
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Виробник: Infineon Technologies
Description: IC USB TYPE C 1-PORT 24QFN
Packaging: Bulk
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI, UART/USART, USB
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.71V ~ 5.5V
Program Memory Type: FLASH (32kB)
Applications: USB Type C
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 24-QFN (4x4)
Number of I/O: 14
DigiKey Programmable: Not Verified
Description: IC USB TYPE C 1-PORT 24QFN
Packaging: Bulk
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI, UART/USART, USB
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.71V ~ 5.5V
Program Memory Type: FLASH (32kB)
Applications: USB Type C
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 24-QFN (4x4)
Number of I/O: 14
DigiKey Programmable: Not Verified
на замовлення 1018 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 314+ | 75.25 грн |
| TDA22590XUMA1 |
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Виробник: Infineon Technologies
Description: POWERSTAGE CE
Packaging: Tape & Reel (TR)
Package / Case: 34-PowerUFLGA
Voltage - Output: 0.225V ~ 5.5V
Mounting Type: Surface Mount
Number of Outputs: 1
Voltage - Input: 4.25V ~ 16V
Operating Temperature: -40°C ~ 125°C
Applications: Converter, CPU GPU
Supplier Device Package: PG-UFLGA-34
Description: POWERSTAGE CE
Packaging: Tape & Reel (TR)
Package / Case: 34-PowerUFLGA
Voltage - Output: 0.225V ~ 5.5V
Mounting Type: Surface Mount
Number of Outputs: 1
Voltage - Input: 4.25V ~ 16V
Operating Temperature: -40°C ~ 125°C
Applications: Converter, CPU GPU
Supplier Device Package: PG-UFLGA-34
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| CY14B256PA-SFXI |
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Виробник: Infineon Technologies
Description: IC NVSRAM 256KBIT SPI 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Clock Frequency: 40 MHz
Memory Format: NVSRAM
Supplier Device Package: 16-SOIC
Memory Interface: SPI
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
Description: IC NVSRAM 256KBIT SPI 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Clock Frequency: 40 MHz
Memory Format: NVSRAM
Supplier Device Package: 16-SOIC
Memory Interface: SPI
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
на замовлення 456 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 847.65 грн |
| 10+ | 724.26 грн |
| 46+ | 669.07 грн |
| 92+ | 605.68 грн |
| 138+ | 593.03 грн |
| 276+ | 572.02 грн |
| CY7C63231A-SC |
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Виробник: Infineon Technologies
Description: IC MCU 3K USB LS PERIPH 18-SOIC
Packaging: Tube
Package / Case: 18-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Interface: USB
RAM Size: 96 x 8
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.5V ~ 5.5V
Controller Series: CY7C632xx
Program Memory Type: OTP (3kB)
Applications: USB Microcontroller
Core Processor: M8B
Supplier Device Package: 18-SOIC
Number of I/O: 10
DigiKey Programmable: Not Verified
Description: IC MCU 3K USB LS PERIPH 18-SOIC
Packaging: Tube
Package / Case: 18-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Interface: USB
RAM Size: 96 x 8
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.5V ~ 5.5V
Controller Series: CY7C632xx
Program Memory Type: OTP (3kB)
Applications: USB Microcontroller
Core Processor: M8B
Supplier Device Package: 18-SOIC
Number of I/O: 10
DigiKey Programmable: Not Verified
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| IPS60R1K0PFD7SAKMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 4.7A TO251-3
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 1A, 10V
Power Dissipation (Max): 26W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 400 V
Description: MOSFET N-CH 650V 4.7A TO251-3
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 1A, 10V
Power Dissipation (Max): 26W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 400 V
на замовлення 64370 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 774+ | 28.19 грн |
| IPS60R210PFD7SAKMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 16A TO251-3
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 4.9A, 10V
Power Dissipation (Max): 64W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 240µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1015 pF @ 400 V
Description: MOSFET N-CH 650V 16A TO251-3
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 4.9A, 10V
Power Dissipation (Max): 64W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 240µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1015 pF @ 400 V
на замовлення 5569 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 296+ | 73.73 грн |
| IPU95R2K0P7AKMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 950V 4A TO251-3
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 1.7A, 10V
Power Dissipation (Max): 37W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 80µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 400 V
Description: MOSFET N-CH 950V 4A TO251-3
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 1.7A, 10V
Power Dissipation (Max): 37W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 80µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 400 V
на замовлення 23457 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 405+ | 52.19 грн |
| IRFZ46ZSTRLPBF |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 51A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Rds On (Max) @ Id, Vgs: 13.6mOhm @ 31A, 10V
Power Dissipation (Max): 82W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1460 pF @ 25 V
Description: MOSFET N-CH 55V 51A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Rds On (Max) @ Id, Vgs: 13.6mOhm @ 31A, 10V
Power Dissipation (Max): 82W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1460 pF @ 25 V
на замовлення 3616 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 292+ | 72.18 грн |
| ISC110N12NM6ATMA1 |
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Виробник: Infineon Technologies
Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 62A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 26A, 10V
Power Dissipation (Max): 3W (Ta), 94W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 35µA
Supplier Device Package: SuperSO8
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 19.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 60 V
Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 62A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 26A, 10V
Power Dissipation (Max): 3W (Ta), 94W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 35µA
Supplier Device Package: SuperSO8
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 19.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 60 V
на замовлення 4652 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 135.66 грн |
| 10+ | 87.33 грн |
| 100+ | 59.43 грн |
| 500+ | 44.71 грн |
| 1000+ | 41.98 грн |
| DZ1100N22KHPSA2 |
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Виробник: Infineon Technologies
Description: DIODE GP 2.2KV 1100A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1100A
Supplier Device Package: Module
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 2200 V
Voltage - Forward (Vf) (Max) @ If: 1.11 V @ 3000 A
Current - Reverse Leakage @ Vr: 80 mA @ 2200 V
Description: DIODE GP 2.2KV 1100A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1100A
Supplier Device Package: Module
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 2200 V
Voltage - Forward (Vf) (Max) @ If: 1.11 V @ 3000 A
Current - Reverse Leakage @ Vr: 80 mA @ 2200 V
на замовлення 1 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 37342.77 грн |
| IRFB7440GPBF |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N CH 40V 120A TO220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 100A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 100µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4730 pF @ 25 V
Description: MOSFET N CH 40V 120A TO220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 100A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 100µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4730 pF @ 25 V
на замовлення 1450 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 279+ | 76.17 грн |
| AUIRFS4610 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 73A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 44A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3550 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 100V 73A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 44A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3550 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
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| CY7C25632KV18-500BZXC |
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Виробник: Infineon Technologies
Description: IC SRAM 72MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 500 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 4M x 18
DigiKey Programmable: Not Verified
Description: IC SRAM 72MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 500 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 4M x 18
DigiKey Programmable: Not Verified
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| S29AS016J70BHI043 |
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Виробник: Infineon Technologies
Description: IC FLASH 16MBIT PARALLEL 48FBGA
Packaging: Tape & Reel (TR)
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 1.95V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 48-FBGA (8.15x6.15)
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 2M x 8, 1M x 16
DigiKey Programmable: Not Verified
Description: IC FLASH 16MBIT PARALLEL 48FBGA
Packaging: Tape & Reel (TR)
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 1.95V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 48-FBGA (8.15x6.15)
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 2M x 8, 1M x 16
DigiKey Programmable: Not Verified
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| S29GL064S70BHI043 |
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Виробник: Infineon Technologies
Description: IC FLASH 64MBIT PARALLEL 48FBGA
Packaging: Tape & Reel (TR)
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 48-FBGA (8.15x6.15)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 8M x 8, 4M x 16
DigiKey Programmable: Not Verified
Description: IC FLASH 64MBIT PARALLEL 48FBGA
Packaging: Tape & Reel (TR)
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 48-FBGA (8.15x6.15)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 8M x 8, 4M x 16
DigiKey Programmable: Not Verified
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| S29GL064S90FHI040 |
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Виробник: Infineon Technologies
Description: IC FLASH 64MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Grade: Automotive
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 8M x 8, 4M x 16
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: IC FLASH 64MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Grade: Automotive
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 8M x 8, 4M x 16
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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| S29GL064S90BHI043 |
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Виробник: Infineon Technologies
Description: IC FLASH 64MBIT PARALLEL 48FBGA
Packaging: Tape & Reel (TR)
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 48-FBGA (8.15x6.15)
Grade: Automotive
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 8M x 8, 4M x 16
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: IC FLASH 64MBIT PARALLEL 48FBGA
Packaging: Tape & Reel (TR)
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 48-FBGA (8.15x6.15)
Grade: Automotive
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 8M x 8, 4M x 16
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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| S29GL064S90BHI040 |
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Виробник: Infineon Technologies
Description: IC FLASH 64MBIT PARALLEL 48FBGA
Packaging: Tray
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 48-FBGA (8.15x6.15)
Grade: Automotive
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 8M x 8, 4M x 16
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: IC FLASH 64MBIT PARALLEL 48FBGA
Packaging: Tray
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 48-FBGA (8.15x6.15)
Grade: Automotive
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 8M x 8, 4M x 16
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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| IDD09SG60CXTMA2 |
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Виробник: Infineon Technologies
Description: DIODE SIL CARB 600V 9A PGTO2523
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 280pF @ 1V, 1MHz
Current - Average Rectified (Io): 9A
Supplier Device Package: PG-TO252-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 9 A
Current - Reverse Leakage @ Vr: 80 µA @ 600 V
Description: DIODE SIL CARB 600V 9A PGTO2523
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 280pF @ 1V, 1MHz
Current - Average Rectified (Io): 9A
Supplier Device Package: PG-TO252-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 9 A
Current - Reverse Leakage @ Vr: 80 µA @ 600 V
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| CY7C13451G-100BZXE |
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Виробник: Infineon Technologies
Description: IC SRAM 4MBIT PAR 165FBGA
Packaging: Bulk
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 100 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Access Time: 8 ns
Memory Organization: 128K x 36
DigiKey Programmable: Not Verified
Description: IC SRAM 4MBIT PAR 165FBGA
Packaging: Bulk
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 100 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Access Time: 8 ns
Memory Organization: 128K x 36
DigiKey Programmable: Not Verified
на замовлення 259 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 32+ | 729.06 грн |
| CHL8325A-03CRT |
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Виробник: Infineon Technologies
Description: IC REG BUCK 40VQFN
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Output Type: PWM
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: -20°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 200kHz ~ 1.2MHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 3.3V
Supplier Device Package: PG-VQFN-40-902
Synchronous Rectifier: No
Control Features: Enable, Power Good
Serial Interfaces: I2C, PMBus, SMBus
Output Phases: 5
Clock Sync: No
Number of Outputs: 5
Description: IC REG BUCK 40VQFN
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Output Type: PWM
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: -20°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 200kHz ~ 1.2MHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 3.3V
Supplier Device Package: PG-VQFN-40-902
Synchronous Rectifier: No
Control Features: Enable, Power Good
Serial Interfaces: I2C, PMBus, SMBus
Output Phases: 5
Clock Sync: No
Number of Outputs: 5
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| FF225R12ME4PBPSA1 |
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Виробник: Infineon Technologies
Description: IGBT MOD 1200V 450A 20MW
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 225A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 450 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 13 nF @ 25 V
Description: IGBT MOD 1200V 450A 20MW
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 225A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 450 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 13 nF @ 25 V
на замовлення 316 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 7425.80 грн |
| S29GL512T10TFI013 |
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Виробник: Infineon Technologies
Description: IC FLASH 512MBIT PARALLEL 56TSOP
Packaging: Tape & Reel (TR)
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 512MBIT PARALLEL 56TSOP
Packaging: Tape & Reel (TR)
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
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| S29GL512T10TFI013 |
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Виробник: Infineon Technologies
Description: IC FLASH 512MBIT PARALLEL 56TSOP
Packaging: Cut Tape (CT)
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 512MBIT PARALLEL 56TSOP
Packaging: Cut Tape (CT)
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
на замовлення 490 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 685.69 грн |
| 10+ | 612.71 грн |
| 25+ | 593.85 грн |
| 50+ | 543.96 грн |
| 100+ | 530.67 грн |
| 250+ | 514.70 грн |
| EVALFFXMR20KM1HDRTOBO1 |
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Виробник: Infineon Technologies
Description: EVAL BOARD FOR FF3MR20KM1H
Packaging: Box
Function: MOSFET
Type: Power Management
Utilized IC / Part: FF3MR20KM1H, FF4MR20KM1H, FF6MR20KM1H
Supplied Contents: Board(s)
Primary Attributes: Isolated
Embedded: Yes, MCU
Secondary Attributes: On-Board LEDs
Contents: Board(s)
Description: EVAL BOARD FOR FF3MR20KM1H
Packaging: Box
Function: MOSFET
Type: Power Management
Utilized IC / Part: FF3MR20KM1H, FF4MR20KM1H, FF6MR20KM1H
Supplied Contents: Board(s)
Primary Attributes: Isolated
Embedded: Yes, MCU
Secondary Attributes: On-Board LEDs
Contents: Board(s)
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| FF4MR12W2M1HB11BPSA1 |
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Виробник: Infineon Technologies
Description: SIC 2N-CH 1200V 170A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 170A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 17600pF @ 800V
Rds On (Max) @ Id, Vgs: 4mOhm @ 200A, 18V
Gate Charge (Qg) (Max) @ Vgs: 594nC @ 18V
Vgs(th) (Max) @ Id: 5.15V @ 80mA
Supplier Device Package: Module
Description: SIC 2N-CH 1200V 170A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 170A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 17600pF @ 800V
Rds On (Max) @ Id, Vgs: 4mOhm @ 200A, 18V
Gate Charge (Qg) (Max) @ Vgs: 594nC @ 18V
Vgs(th) (Max) @ Id: 5.15V @ 80mA
Supplier Device Package: Module
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| FF75R12W1T7EB11BPSA1 |
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Виробник: Infineon Technologies
Description: EASY STANDARD
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: AG-EASY1B
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 65 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 5.6 µA
Input Capacitance (Cies) @ Vce: 15100 pF @ 25 V
Description: EASY STANDARD
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: AG-EASY1B
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 65 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 5.6 µA
Input Capacitance (Cies) @ Vce: 15100 pF @ 25 V
на замовлення 24 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 2901.42 грн |
| 24+ | 1911.20 грн |
| CY15V108QN-20LPXI |
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Виробник: Infineon Technologies
Description: IC FRAM 8MBIT SPI 20MHZ 8GQFN
Packaging: Tray
Package / Case: 8-UQFN
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.71V ~ 1.89V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 20 MHz
Memory Format: FRAM
Supplier Device Package: 8-GQFN (3.23x3.28)
Memory Interface: SPI
Memory Organization: 1M x 8
DigiKey Programmable: Not Verified
Description: IC FRAM 8MBIT SPI 20MHZ 8GQFN
Packaging: Tray
Package / Case: 8-UQFN
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.71V ~ 1.89V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 20 MHz
Memory Format: FRAM
Supplier Device Package: 8-GQFN (3.23x3.28)
Memory Interface: SPI
Memory Organization: 1M x 8
DigiKey Programmable: Not Verified
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| CY15V108QI-20LPXC |
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Виробник: Infineon Technologies
Description: IC FRAM 8MBIT SPI 20MHZ 8GQFN
Packaging: Tray
Package / Case: 8-UQFN
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.71V ~ 1.89V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 20 MHz
Memory Format: FRAM
Supplier Device Package: 8-GQFN (3.23x3.28)
Memory Interface: SPI
Memory Organization: 1M x 8
DigiKey Programmable: Not Verified
Description: IC FRAM 8MBIT SPI 20MHZ 8GQFN
Packaging: Tray
Package / Case: 8-UQFN
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.71V ~ 1.89V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 20 MHz
Memory Format: FRAM
Supplier Device Package: 8-GQFN (3.23x3.28)
Memory Interface: SPI
Memory Organization: 1M x 8
DigiKey Programmable: Not Verified
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| ESD8V0L1B-02LRH E6433 |
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Виробник: Infineon Technologies
Description: TVS DIODE 14VWM 21VC TSLP-2
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 8.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 14V (Max)
Supplier Device Package: PG-TSLP-2-17
Bidirectional Channels: 1
Voltage - Breakdown (Min): 14.5V (Typ)
Voltage - Clamping (Max) @ Ipp: 21V (Typ)
Power Line Protection: No
Description: TVS DIODE 14VWM 21VC TSLP-2
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 8.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 14V (Max)
Supplier Device Package: PG-TSLP-2-17
Bidirectional Channels: 1
Voltage - Breakdown (Min): 14.5V (Typ)
Voltage - Clamping (Max) @ Ipp: 21V (Typ)
Power Line Protection: No
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| IMBG120R116M2HXTMA1 |
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Виробник: Infineon Technologies
Description: SIC DISCRETE
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21.2A (Tc)
Rds On (Max) @ Id, Vgs: 115.7mOhm @ 6A, 18V
Power Dissipation (Max): 123W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 1.9mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 14.4 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 800 V
Description: SIC DISCRETE
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21.2A (Tc)
Rds On (Max) @ Id, Vgs: 115.7mOhm @ 6A, 18V
Power Dissipation (Max): 123W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 1.9mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 14.4 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 800 V
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| IMBG120R116M2HXTMA1 |
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Виробник: Infineon Technologies
Description: SIC DISCRETE
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21.2A (Tc)
Rds On (Max) @ Id, Vgs: 115.7mOhm @ 6A, 18V
Power Dissipation (Max): 123W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 1.9mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 14.4 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 800 V
Description: SIC DISCRETE
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21.2A (Tc)
Rds On (Max) @ Id, Vgs: 115.7mOhm @ 6A, 18V
Power Dissipation (Max): 123W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 1.9mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 14.4 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 800 V
на замовлення 495 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 511.39 грн |
| 10+ | 331.25 грн |
| 100+ | 239.94 грн |
| IPB80N06S2L09ATMA2 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 80A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 52A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 2V @ 125µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2620 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 55V 80A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 52A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 2V @ 125µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2620 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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| IM240M6Z1BALMA1 |
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Виробник: Infineon Technologies
Description: IGBT MODULE 600V 8.9W 23SOP
Packaging: Tube
Package / Case: 23-PowerSMD Module, Gull Wing
Mounting Type: Surface Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 4A
NTC Thermistor: Yes
Supplier Device Package: 23-SOP
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 8.9 W
Current - Collector Cutoff (Max): 40 µA
Description: IGBT MODULE 600V 8.9W 23SOP
Packaging: Tube
Package / Case: 23-PowerSMD Module, Gull Wing
Mounting Type: Surface Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 4A
NTC Thermistor: Yes
Supplier Device Package: 23-SOP
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 8.9 W
Current - Collector Cutoff (Max): 40 µA
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| IR2011PBF | ![]() |
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Виробник: Infineon Technologies
Description: IC GATE DRVR HI/LOW SIDE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 200 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 35ns, 20ns
Channel Type: Independent
Driven Configuration: High-Side or Low-Side
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.7V, 2.2V
Current - Peak Output (Source, Sink): 1A, 1A
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HI/LOW SIDE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 200 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 35ns, 20ns
Channel Type: Independent
Driven Configuration: High-Side or Low-Side
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.7V, 2.2V
Current - Peak Output (Source, Sink): 1A, 1A
DigiKey Programmable: Not Verified
на замовлення 582 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 265.56 грн |
| 10+ | 193.10 грн |
| 50+ | 167.81 грн |
| 100+ | 150.14 грн |
| 250+ | 142.39 грн |
| 500+ | 137.72 грн |
| CY8C4247LTQ-M475 |
![]() |
Виробник: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 68VFQFN
Packaging: Tray
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 1x12b SAR; D/A 4x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, Cap Sense, LCD, LVD, POR, PWM, SmartSense, WDT
Supplier Device Package: 68-QFN (8x8)
Number of I/O: 55
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 128KB FLASH 68VFQFN
Packaging: Tray
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 1x12b SAR; D/A 4x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, Cap Sense, LCD, LVD, POR, PWM, SmartSense, WDT
Supplier Device Package: 68-QFN (8x8)
Number of I/O: 55
DigiKey Programmable: Not Verified
на замовлення 520 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 448.90 грн |
| 10+ | 333.63 грн |
| 25+ | 308.90 грн |
| 80+ | 270.07 грн |
| CY8C4247BZI-L479 |
![]() |
Виробник: Infineon Technologies
Description: IC MCU 32BIT 128KB FLSH 124VFBGA
Packaging: Tray
Package / Case: 124-VFBGA
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 16x12b; D/A 2x7b, 2x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART, USB
Peripherals: Brown-out Detect/Reset, CapSense, DMA, LCD, LVD, POR, PWM, SmartSense, WDT
Supplier Device Package: 124-VFBGA (9x9)
Number of I/O: 98
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 128KB FLSH 124VFBGA
Packaging: Tray
Package / Case: 124-VFBGA
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 16x12b; D/A 2x7b, 2x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART, USB
Peripherals: Brown-out Detect/Reset, CapSense, DMA, LCD, LVD, POR, PWM, SmartSense, WDT
Supplier Device Package: 124-VFBGA (9x9)
Number of I/O: 98
DigiKey Programmable: Not Verified
на замовлення 1240 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 716.11 грн |
| 10+ | 540.90 грн |
| 25+ | 503.59 грн |
| 80+ | 452.47 грн |
| CY8C4247FNI-BL493T |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 68WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 68-UFBGA, WLCSP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 8x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Bluetooth, Brown-out Detect/Reset, Cap Sense, LCD, LVD, POR, PWM, SmartCard, SmartSense, WDT
Supplier Device Package: 68-WLCSP (3.52x3.91)
Number of I/O: 36
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 128KB FLASH 68WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 68-UFBGA, WLCSP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 8x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Bluetooth, Brown-out Detect/Reset, Cap Sense, LCD, LVD, POR, PWM, SmartCard, SmartSense, WDT
Supplier Device Package: 68-WLCSP (3.52x3.91)
Number of I/O: 36
DigiKey Programmable: Not Verified
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2000+ | 370.30 грн |
| CY8C4247FNI-BL493T |
![]() |
Виробник: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 68WLCSP
Packaging: Cut Tape (CT)
Package / Case: 68-UFBGA, WLCSP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 8x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Bluetooth, Brown-out Detect/Reset, Cap Sense, LCD, LVD, POR, PWM, SmartCard, SmartSense, WDT
Supplier Device Package: 68-WLCSP (3.52x3.91)
Number of I/O: 36
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 128KB FLASH 68WLCSP
Packaging: Cut Tape (CT)
Package / Case: 68-UFBGA, WLCSP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 8x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Bluetooth, Brown-out Detect/Reset, Cap Sense, LCD, LVD, POR, PWM, SmartCard, SmartSense, WDT
Supplier Device Package: 68-WLCSP (3.52x3.91)
Number of I/O: 36
DigiKey Programmable: Not Verified
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 633.89 грн |
| 10+ | 473.52 грн |
| 25+ | 439.28 грн |
| 100+ | 376.89 грн |
| 250+ | 360.03 грн |
| 500+ | 349.87 грн |
| 1000+ | 335.92 грн |
| CY8C4247AZA-M475T |
Виробник: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 64LQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 16x12b SAR; D/A 4x7/8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, LCD, LVD, POR, PWM, Temp Sensor, WDT
Supplier Device Package: 64-TQFP (10x10)
Grade: Automotive
Number of I/O: 51
Qualification: AEC-Q100
Description: IC MCU 32BIT 128KB FLASH 64LQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 16x12b SAR; D/A 4x7/8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, LCD, LVD, POR, PWM, Temp Sensor, WDT
Supplier Device Package: 64-TQFP (10x10)
Grade: Automotive
Number of I/O: 51
Qualification: AEC-Q100
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| CY8C4247AZA-M475 |
Виробник: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 24x12b SAR; D/A 4x7/8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, LCD, LVD, POR, PWM, SmartSense, WDT
Supplier Device Package: 64-TQFP (10x10)
Grade: Automotive
Number of I/O: 51
Qualification: AEC-Q100
Description: IC MCU 32BIT 128KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 24x12b SAR; D/A 4x7/8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, LCD, LVD, POR, PWM, SmartSense, WDT
Supplier Device Package: 64-TQFP (10x10)
Grade: Automotive
Number of I/O: 51
Qualification: AEC-Q100
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| CY8C4247LWA-M484T |
Виробник: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 56VFQFN
Packaging: Tape & Reel (TR)
Package / Case: 56-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 16x12b SAR; D/A 4x7/8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, Cap Sense, DMA, LCD, LVD, POR, PWM, SmartSense, Temp Sensor, WDT
Supplier Device Package: 56-QFN-EP (8x8)
Grade: Automotive
Number of I/O: 46
Qualification: AEC-Q100
Description: IC MCU 32BIT 128KB FLASH 56VFQFN
Packaging: Tape & Reel (TR)
Package / Case: 56-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 16x12b SAR; D/A 4x7/8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, Cap Sense, DMA, LCD, LVD, POR, PWM, SmartSense, Temp Sensor, WDT
Supplier Device Package: 56-QFN-EP (8x8)
Grade: Automotive
Number of I/O: 46
Qualification: AEC-Q100
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| CY8C4247LWA-M484 |
Виробник: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 56VFQFN
Packaging: Tray
Package / Case: 56-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 24x12b SAR; D/A 4x7/8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: CANbus, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, Cap Sense, LCD, LVD, POR, PWM, SmartSense, WDT
Supplier Device Package: 56-QFN-EP (8x8)
Grade: Automotive
Number of I/O: 46
Qualification: AEC-Q100
Description: IC MCU 32BIT 128KB FLASH 56VFQFN
Packaging: Tray
Package / Case: 56-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 24x12b SAR; D/A 4x7/8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: CANbus, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, Cap Sense, LCD, LVD, POR, PWM, SmartSense, WDT
Supplier Device Package: 56-QFN-EP (8x8)
Grade: Automotive
Number of I/O: 46
Qualification: AEC-Q100
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| CY8C4247AZA-M483 |
Виробник: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 48LQFP
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 24x12b SAR; D/A 4x7/8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: CANbus, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, Cap Sense, LCD, LVD, POR, PWM, SmartSense, WDT
Supplier Device Package: 48-TQFP (7x7)
Grade: Automotive
Number of I/O: 38
Qualification: AEC-Q100
Description: IC MCU 32BIT 128KB FLASH 48LQFP
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 24x12b SAR; D/A 4x7/8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: CANbus, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, Cap Sense, LCD, LVD, POR, PWM, SmartSense, WDT
Supplier Device Package: 48-TQFP (7x7)
Grade: Automotive
Number of I/O: 38
Qualification: AEC-Q100
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| CY8C4247AZS-M475T |
Виробник: Infineon Technologies
Description: PSOC4 - GENERAL
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 16x12b SAR; D/A 4x7/8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, LCD, LVD, POR, PWM, Temp Sensor, WDT
Supplier Device Package: 64-TQFP (10x10)
Grade: Automotive
Number of I/O: 51
Qualification: AEC-Q100
Description: PSOC4 - GENERAL
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 16x12b SAR; D/A 4x7/8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, LCD, LVD, POR, PWM, Temp Sensor, WDT
Supplier Device Package: 64-TQFP (10x10)
Grade: Automotive
Number of I/O: 51
Qualification: AEC-Q100
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| CY8C4247AZS-M475 |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 24x12b SAR; D/A 4x7/8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, LCD, LVD, POR, PWM, SmartSense, WDT
Supplier Device Package: 64-TQFP (10x10)
Grade: Automotive
Number of I/O: 51
Qualification: AEC-Q100
Description: IC MCU 32BIT 128KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 24x12b SAR; D/A 4x7/8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, LCD, LVD, POR, PWM, SmartSense, WDT
Supplier Device Package: 64-TQFP (10x10)
Grade: Automotive
Number of I/O: 51
Qualification: AEC-Q100
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 782.70 грн |
| 10+ | 588.09 грн |
| 25+ | 546.66 грн |
| 160+ | 459.20 грн |
| 320+ | 445.28 грн |
| 480+ | 438.31 грн |
| 960+ | 421.07 грн |
| CY8C4247LWS-M484T |
Виробник: Infineon Technologies
Description: PSOC4 - GENERAL
Packaging: Tape & Reel (TR)
Package / Case: 56-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 16x12b SAR; D/A 4x7/8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, Cap Sense, DMA, LCD, LVD, POR, PWM, SmartSense, Temp Sensor, WDT
Supplier Device Package: 56-QFN-EP (8x8)
Grade: Automotive
Number of I/O: 46
Qualification: AEC-Q100
Description: PSOC4 - GENERAL
Packaging: Tape & Reel (TR)
Package / Case: 56-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 16x12b SAR; D/A 4x7/8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, Cap Sense, DMA, LCD, LVD, POR, PWM, SmartSense, Temp Sensor, WDT
Supplier Device Package: 56-QFN-EP (8x8)
Grade: Automotive
Number of I/O: 46
Qualification: AEC-Q100
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| CY8C4247AZS-M483 |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 24x12b SAR; D/A 4x7/8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: CANbus, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, Cap Sense, LCD, LVD, POR, PWM, SmartSense, WDT
Supplier Device Package: 64-TQFP (10x10)
Grade: Automotive
Number of I/O: 38
Qualification: AEC-Q100
Description: IC MCU 32BIT 128KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 24x12b SAR; D/A 4x7/8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: CANbus, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, Cap Sense, LCD, LVD, POR, PWM, SmartSense, WDT
Supplier Device Package: 64-TQFP (10x10)
Grade: Automotive
Number of I/O: 38
Qualification: AEC-Q100
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 825.45 грн |
| 10+ | 621.10 грн |
| 25+ | 577.67 грн |
| 80+ | 503.45 грн |
| 250+ | 476.04 грн |
| 500+ | 463.18 грн |
| 1000+ | 445.17 грн |
| TT250N16KOFHPSA1 |
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Виробник: Infineon Technologies
Description: SCR MODULE 1.6KV MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 8000A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 250 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Voltage - Off State: 1.6 kV
Description: SCR MODULE 1.6KV MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 8000A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 250 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Voltage - Off State: 1.6 kV
на замовлення 28 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 13808.27 грн |
| 12+ | 12180.54 грн |
| IKD06N60RAATMA2 |
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Виробник: Infineon Technologies
Description: IGBT TRENCH 600V 12A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 68 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 6A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench
Td (on/off) @ 25°C: 12ns/127ns
Test Condition: 400V, 6A, 23Ohm, 15V
Gate Charge: 48 nC
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 100 W
Description: IGBT TRENCH 600V 12A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 68 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 6A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench
Td (on/off) @ 25°C: 12ns/127ns
Test Condition: 400V, 6A, 23Ohm, 15V
Gate Charge: 48 nC
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 100 W
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| CY22050KFI |
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Виробник: Infineon Technologies
Description: IC CLOCK GEN PROG 16-TSSOP
Packaging: Tube
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: CMOS
Frequency - Max: 150MHz, 166.6MHz
Type: Clock Generator, Fanout Distribution
Input: LVCMOS, LVTTL, Crystal
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.5V, 3.3V
Ratio - Input:Output: 1:6
Differential - Input:Output: No/No
Supplier Device Package: 16-TSSOP
PLL: Yes with Bypass
Divider/Multiplier: Yes/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
Description: IC CLOCK GEN PROG 16-TSSOP
Packaging: Tube
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: CMOS
Frequency - Max: 150MHz, 166.6MHz
Type: Clock Generator, Fanout Distribution
Input: LVCMOS, LVTTL, Crystal
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.5V, 3.3V
Ratio - Input:Output: 1:6
Differential - Input:Output: No/No
Supplier Device Package: 16-TSSOP
PLL: Yes with Bypass
Divider/Multiplier: Yes/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
на замовлення 960 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 971.80 грн |
| 10+ | 860.20 грн |
| 25+ | 824.56 грн |
| 100+ | 681.80 грн |
| 250+ | 648.33 грн |
| 960+ | 556.31 грн |
| CY22050KZXC-149 |
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Виробник: Infineon Technologies
Description: IC CLOCK GENERATOR
Packaging: Tube
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Supplier Device Package: 16-TSSOP
DigiKey Programmable: Not Verified
Description: IC CLOCK GENERATOR
Packaging: Tube
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Supplier Device Package: 16-TSSOP
DigiKey Programmable: Not Verified
на замовлення 781 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 124.15 грн |






































