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IPT014N10N5ATMA1 IPT014N10N5ATMA1 Infineon Technologies Infineon-IPT014N10N5-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c85c5e5aa0185e454579c6dfa Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: 362A
Supplier Device Package: PG-HSOF-8-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 100 V
на замовлення 1121 шт:
термін постачання 21-31 дні (днів)
1+559.43 грн
10+365.27 грн
100+267.17 грн
500+218.73 грн
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CY8C4147LQE-S473T CY8C4147LQE-S473T Infineon Technologies Infineon-Automotive_PSoC_4_PSoC_4100S_Plus_Datasheet_Programmable_System-on-Chip_(PSoC)-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee7ff0b70e8 Description: IC MCU 32BIT 128KB FLASH 40QFN
Packaging: Tape & Reel (TR)
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Speed: 24MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b, 20x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, DMA, LCD, POR, PWM, Temp Sensor, WDT
Supplier Device Package: 40-QFN (6x6)
Grade: Automotive
Number of I/O: 34
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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CY91F522BSEPMC1-GSE1 CY91F522BSEPMC1-GSE1 Infineon Technologies Description: IC MCU 32BIT 320KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 320KB (320K x 8)
RAM Size: 56K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: FR81S
Data Converters: A/D 26x12b SAR; D/A 1x8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Number of I/O: 44
DigiKey Programmable: Not Verified
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CY7C1361A-100BGC CY7C1361A-100BGC Infineon Technologies CY7C1361A_63A.pdf Description: IC SRAM 9MBIT 100MHZ 119BGA
Packaging: Bag
Package / Case: 119-BGA
Mounting Type: Surface Mount
Memory Size: 9Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 100 MHz
Memory Format: SRAM
Supplier Device Package: 119-PBGA (14x22)
Memory Interface: Parallel
Access Time: 8 ns
Memory Organization: 256K x 36
DigiKey Programmable: Not Verified
на замовлення 77 шт:
термін постачання 21-31 дні (днів)
36+637.61 грн
Мінімальне замовлення: 36
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PXM1310CDMG003XTMA1 PXM1310CDMG003XTMA1 Infineon Technologies Infineon-Multiphase_digital_controllers_PXE1_PXM1-DataSheet-v01_00-EN.pdf?fileId=5546d46272e49d2a01736b7cd95b3c4a Description: PRIMARION CONTROLLER
Packaging: Cut Tape (CT)
Package / Case: 40-VFQFN Exposed Pad
Voltage - Output: Programmable
Mounting Type: Surface Mount
Number of Outputs: 6
Voltage - Input: 3V ~ 3.6V
Operating Temperature: -5°C ~ 85°C (TA)
Applications: Controller, Intel VR12.5
Supplier Device Package: PG-VQFN-40-13
на замовлення 4987 шт:
термін постачання 21-31 дні (днів)
1+372.68 грн
10+274.07 грн
25+252.76 грн
100+215.25 грн
250+204.78 грн
500+198.47 грн
1000+190.11 грн
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IDWD30E120D7XKSA1 IDWD30E120D7XKSA1 Infineon Technologies IDWD30E120D7_Rev1.00_12-15-23.pdf Description: DIODE GEN PURP 1200V 52A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 5A (Io)
Reverse Recovery Time (trr): 135 ns
Technology: Standard
Current - Average Rectified (Io): 52A
Supplier Device Package: PG-TO247-2-2
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 30 A
Current - Reverse Leakage @ Vr: 20 µA @ 1200 V
на замовлення 148 шт:
термін постачання 21-31 дні (днів)
2+314.58 грн
10+221.00 грн
25+200.55 грн
Мінімальне замовлення: 2
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AIMBG120R060M1XTMA1 AIMBG120R060M1XTMA1 Infineon Technologies 448_AIMBG120R.pdf Description: SIC_DISCRETE
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 13A, 20V
Power Dissipation (Max): 202W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 4.3mA
Supplier Device Package: PG-TO263-7-12
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 800 V
Qualification: AEC-Q101
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AIMBG120R060M1XTMA1 AIMBG120R060M1XTMA1 Infineon Technologies 448_AIMBG120R.pdf Description: SIC_DISCRETE
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 13A, 20V
Power Dissipation (Max): 202W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 4.3mA
Supplier Device Package: PG-TO263-7-12
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 800 V
Qualification: AEC-Q101
на замовлення 949 шт:
термін постачання 21-31 дні (днів)
1+931.28 грн
10+622.95 грн
100+556.05 грн
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CY8C24423A-24SXIT CY8C24423A-24SXIT Infineon Technologies Infineon-CY8C24123A_CY8C24223A_CY8C24423A_PSoC_Programmable_System-on-Chip-DataSheet-v24_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec6aaf93d0f Description: IC MCU 8BIT 4KB FLASH 28SOIC
Packaging: Tape & Reel (TR)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 4KB (4K x 8)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 10x14b; D/A 2x9b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V
Connectivity: I2C, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 28-SOIC
Number of I/O: 24
DigiKey Programmable: Not Verified
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IRF6655TRPBF IRF6655TRPBF Infineon Technologies IRF6655%28TR%29PbF.pdf Description: MOSFET N-CH 100V 4.2A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric SH
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta), 19A (Tc)
Rds On (Max) @ Id, Vgs: 62mOhm @ 5A, 10V
Power Dissipation (Max): 2.2W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 25µA
Supplier Device Package: DIRECTFET™ SH
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 25 V
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CY7C024BV-15AXI CY7C024BV-15AXI Infineon Technologies Description: IC SRAM 64KBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Dual Port, Asynchronous
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x14)
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 4K x 16
DigiKey Programmable: Not Verified
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S6E2C18L0AGL2000A S6E2C18L0AGL2000A Infineon Technologies download Description: IC MCU 32BIT 1MB FLASH 216LQFP
Packaging: Tray
Package / Case: 216-LQFP
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 32x12b; D/A 2x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, I2C, LINbus, SD, SPI, UART/USART, USB
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 216-LQFP (24x24)
Number of I/O: 190
DigiKey Programmable: Not Verified
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S6J334BJDESE20000 S6J334BJDESE20000 Infineon Technologies Infineon-S6J3310_Series_S6J3320_Series_S6J3330_Series_S6J3340_Series_32-bit_Microcontroller_TRAVEO_T1G_Family-AdditionalTechnicalInformation-v17_00-EN.PDF?fileId=8ac78c8c7d0d8da4017d0edb39375e0e Description: TRAVEO-40NM
Packaging: Tray
Package / Case: 176-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 240MHz
Program Memory Size: 1.5625MB (1.5625M x 8)
RAM Size: 544K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 112K x 8
Core Processor: Arm® Cortex®-R5F
Data Converters: A/D 48x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 3.6V
Connectivity: CANbus, CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 176-TEQFP (24x24)
Number of I/O: 150
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CY3205-DK CY3205-DK Infineon Technologies PSoC%20Dev.%20Tools%20Selector%20Guide.pdf Description: CY8C26443 EVAL BRD
Mounting Type: Socket
Type: MCU 8-Bit
Contents: Board(s), Cable(s), Power Supply, Accessories
Core Processor: M8C
Utilized IC / Part: CY8C26443
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S29GL064N90TFI020 S29GL064N90TFI020 Infineon Technologies Infineon-S29GL064N_S29GL032N_64_Mbit_32_Mbit_3_V_Page_Mode_MirrorBit_Flash-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed556fd548b&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi Description: IC FLASH 64MBIT PARALLEL 56TSOP
Packaging: Tray
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Write Cycle Time - Word, Page: 90ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 8M x 8, 4M x 16
DigiKey Programmable: Verified
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S29GL064N90BAI040 S29GL064N90BAI040 Infineon Technologies Infineon-S29GL064N_S29GL032N_64_Mbit_32_Mbit_3_V_Page_Mode_MirrorBit_Flash-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed556fd548b&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi Description: IC FLASH 64MBIT PARALLEL 48FBGA
Packaging: Tray
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 48-FBGA (8.15x6.15)
Write Cycle Time - Word, Page: 90ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 8M x 8, 4M x 16
DigiKey Programmable: Not Verified
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S29GL064N90FFA023 S29GL064N90FFA023 Infineon Technologies Infineon-S29GL064N_S29GL032N_64_Mbit_32_Mbit_3_V_Page_Mode_MirrorBit_Flash-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed556fd548b&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi Description: IC FLASH 64MBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Write Cycle Time - Word, Page: 90ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 8M x 8, 4M x 16
DigiKey Programmable: Not Verified
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S29GL064N90TFA043 S29GL064N90TFA043 Infineon Technologies Description: IC FLASH 64MBIT PARALLEL 48TSOP
Packaging: Tape & Reel (TR)
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 48-TSOP
Grade: Automotive
Write Cycle Time - Word, Page: 90ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 8M x 8, 4M x 16
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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CY7C64013C-PXC CY7C64013C-PXC Infineon Technologies Description: IC MCU 8K FULL SPEED USB 28DIP
Packaging: Tube
Package / Case: 28-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Interface: I2C, USB, HAPI
RAM Size: 256 x 8
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4V ~ 5.25V
Controller Series: CY7C640xx
Program Memory Type: OTP (8kB)
Applications: USB Microcontroller
Core Processor: M8C
Supplier Device Package: 28-PDIP
Number of I/O: 19
DigiKey Programmable: Not Verified
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CY8C4124LQE-S413 CY8C4124LQE-S413 Infineon Technologies Description: IC MCU 32BIT 16KB FLASH 40UFQFN
Packaging: Tray
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b, 12x12b SAR; D/A 2x7b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 40-QFN (6x6)
Grade: Automotive
Number of I/O: 34
Qualification: AEC-Q100
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CY8C4124LQE-S413T CY8C4124LQE-S413T Infineon Technologies Description: IC MCU 32BIT 16KB FLASH 40UFQFN
Packaging: Tape & Reel (TR)
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b, 12x12b SAR; D/A 2x7b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 40-QFN (6x6)
Grade: Automotive
Number of I/O: 34
Qualification: AEC-Q100
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BSM75GB170DN2HOSA1 Infineon Technologies BSM75GB170DN2_Eupec.pdf Description: IGBT MOD 1700V 110A 625W MOD
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 75A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 110 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 625 W
Input Capacitance (Cies) @ Vce: 11 nF @ 25 V
на замовлення 637 шт:
термін постачання 21-31 дні (днів)
3+8234.02 грн
Мінімальне замовлення: 3
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TLE49614MXTMA1 TLE49614MXTMA1 Infineon Technologies Infineon-TLE4961_4M-DS-v01_00-en.pdf?fileId=db3a304340155f3d0140394b4fd67ddc Description: MAG SWITCH IC HALL EFF SOT23-3
Packaging: Tape & Reel (TR)
Grade: Automotive
Qualification: AEC-Q100
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CY62128EV30LL-45SXIT CY62128EV30LL-45SXIT Infineon Technologies Infineon-CY62128EV30_MoBL_1_Mbit_(128K_X_8)_Static_RAM-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe867f322f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC SRAM 1MBIT PARALLEL 32SOIC
Packaging: Tape & Reel (TR)
Package / Case: 32-SOIC (0.445", 11.30mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-SOIC
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
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CY62128EV30LL-45SXIT CY62128EV30LL-45SXIT Infineon Technologies Infineon-CY62128EV30_MoBL_1_Mbit_(128K_X_8)_Static_RAM-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe867f322f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC SRAM 1MBIT PARALLEL 32SOIC
Packaging: Cut Tape (CT)
Package / Case: 32-SOIC (0.445", 11.30mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-SOIC
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
на замовлення 559 шт:
термін постачання 21-31 дні (днів)
2+308.77 грн
10+263.52 грн
25+251.26 грн
50+227.47 грн
100+219.43 грн
250+209.23 грн
500+198.51 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
CY62128DV30LL-70ZXI CY62128DV30LL-70ZXI Infineon Technologies CY62128DV30%20Rev2006.pdf Description: IC SRAM 1MBIT PARALLEL 32TSOP I
Packaging: Tube
Package / Case: 32-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-TSOP I
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
на замовлення 891 шт:
термін постачання 21-31 дні (днів)
128+179.45 грн
Мінімальне замовлення: 128
В кошику  од. на суму  грн.
CY62128DV30LL-70ZXI CY62128DV30LL-70ZXI Infineon Technologies CY62128DV30%20Rev2006.pdf Description: IC SRAM 1MBIT PARALLEL 32TSOP I
Packaging: Tube
Package / Case: 32-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-TSOP I
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
товару немає в наявності
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IM66D120AXTMA1 IM66D120AXTMA1 Infineon Technologies Infineon-IM66D120A-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8c3de074018c63d5dd683a35 Description: MEMS GROWTH
Packaging: Tape & Reel (TR)
Output Type: Digital, PDM
Size / Dimension: 0.138" L x 0.104" W (3.50mm x 2.65mm)
Sensitivity: -26dB ±1dB @ 94dB SPL
Shape: Rectangular
Type: MEMS (Silicon)
S/N Ratio: 66dB
Termination: Solder Pads
Direction: Omnidirectional
Port Location: Bottom
Height (Max): 0.039" (0.99mm)
Voltage - Rated: 1.8 V
Current - Supply: 1.4 mA
Voltage Range: 1.62 V ~ 3.6 V
Frequency Range: 10 Hz ~ 10 kHz
товару немає в наявності
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IM66D120AXTMA1 IM66D120AXTMA1 Infineon Technologies Infineon-IM66D120A-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8c3de074018c63d5dd683a35 Description: MEMS GROWTH
Packaging: Cut Tape (CT)
Output Type: Digital, PDM
Size / Dimension: 0.138" L x 0.104" W (3.50mm x 2.65mm)
Sensitivity: -26dB ±1dB @ 94dB SPL
Shape: Rectangular
Type: MEMS (Silicon)
S/N Ratio: 66dB
Termination: Solder Pads
Direction: Omnidirectional
Port Location: Bottom
Height (Max): 0.039" (0.99mm)
Voltage - Rated: 1.8 V
Current - Supply: 1.4 mA
Voltage Range: 1.62 V ~ 3.6 V
Frequency Range: 10 Hz ~ 10 kHz
на замовлення 4894 шт:
термін постачання 21-31 дні (днів)
3+117.03 грн
10+91.84 грн
25+84.63 грн
50+74.68 грн
100+70.22 грн
250+67.01 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
S6E2C39J0AGB1000A S6E2C39J0AGB1000A Infineon Technologies download Description: IC MCU 32BIT 1.5MB FLASH 192FBGA
Packaging: Tray
Package / Case: 192-LFBGA
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 1.5MB (1.5M x 8)
RAM Size: 192K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 32x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, I2C, LINbus, SD, SPI, UART/USART, USB
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 192-FBGA (12x12)
Number of I/O: 152
DigiKey Programmable: Not Verified
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S6E2C38H0AGV2000A S6E2C38H0AGV2000A Infineon Technologies download Description: IC MCU 32BIT 1MB FLASH 144LQFP
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 24x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, I2C, LINbus, SD, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 144-LQFP (20x20)
Number of I/O: 120
DigiKey Programmable: Not Verified
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В кошику  од. на суму  грн.
IPSA70R1K2P7SAKMA1 IPSA70R1K2P7SAKMA1 Infineon Technologies Infineon-IPSA70R1K2P7S-DS-v02_00-EN.pdf?fileId=5546d4625f2e26bc015f4d40e16a1340 Description: MOSFET N-CH 700V 4.5A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 900mA, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 40µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 400 V
Input Capacitance (Ciss) (Max) @ Vds: 174 pF @ 400 V
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
62-0095PBF Infineon Technologies fundamentals-of-power-semiconductors Description: MOSFET N-CH 20V 10A/12A 8SOIC
Packaging: Tube
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 12A (Tc)
Rds On (Max) @ Id, Vgs: 13.4mOhm @ 10A, 10V
Power Dissipation (Max): 2W
Vgs(th) (Max) @ Id: 2.55V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 10 V
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D2200N24TVFXPSA1 D2200N24TVFXPSA1 Infineon Technologies D2200N.pdf Description: DIODE GEN PURP 2.4KV 2200A
Packaging: Tray
Package / Case: DO-200AC, K-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 2200A
Operating Temperature - Junction: -40°C ~ 160°C
Voltage - DC Reverse (Vr) (Max): 2400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 2000 A
Current - Reverse Leakage @ Vr: 150 mA @ 2400 V
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BSM15GD120DN2BOSA1 Infineon Technologies Description: IGBT MOD 1200V 25A 145W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 15A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 145 W
Current - Collector Cutoff (Max): 500 µA
Input Capacitance (Cies) @ Vce: 100 pF @ 25 V
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IGB15N120S7ATMA1 IGB15N120S7ATMA1 Infineon Technologies Infineon-IGB15N120S7-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c914a3ac801917eb7408c326a Description: IGBT TRENCH FS 1200V 34A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A
Supplier Device Package: PG-TO263-3-2
IGBT Type: Trench Field Stop
Test Condition: 600V, 15A, 10Ohm, 15V
Gate Charge: 97 nC
Current - Collector (Ic) (Max): 34 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 141 W
Td (on/off) @ 25°C: 16ns/156ns
Switching Energy: 900µJ (on), 680µJ (off)
на замовлення 589 шт:
термін постачання 21-31 дні (днів)
2+320.39 грн
10+203.57 грн
100+144.04 грн
500+124.68 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
BGSX24M2U16E6327XTSA1 BGSX24M2U16E6327XTSA1 Infineon Technologies Infineon-BGSX24M2U16-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018dd17eaaed054c Description: ANTENNA DEVICES
Packaging: Tape & Reel (TR)
Features: DC Blocked
Package / Case: 16-UFLGA Exposed Pad
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: DP4T
RF Type: 5G, LTE
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.1V ~ 1.3V, 1.65V ~ 1.95V
Insertion Loss: 1.14dB
Frequency Range: 400MHz ~ 7.125GHz
Topology: Absorptive
Test Frequency: 7.125GHz
Isolation: 35dB
Supplier Device Package: PG-ULGA-16-6
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AUIRFSL8408 AUIRFSL8408 Infineon Technologies AUIRFS%28L%298408.pdf Description: MOSFET N-CH 40V 195A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 100A, 10V
Power Dissipation (Max): 294W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: TO-262
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 324 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10820 pF @ 25 V
на замовлення 450 шт:
термін постачання 21-31 дні (днів)
146+146.96 грн
Мінімальне замовлення: 146
В кошику  од. на суму  грн.
ROTATEKNOB3D2GOKITTOBO1 ROTATEKNOB3D2GOKITTOBO1 Infineon Technologies ROTATEKNOB3D2GOKITTOBO1_Web.pdf Description: ROTATE & PUSH BUTTON CONTROL ELE
Packaging: Bulk
For Use With/Related Products: 3D Magnetic Sensor
Accessory Type: Knob
на замовлення 6 шт:
термін постачання 21-31 дні (днів)
1+2129.82 грн
В кошику  од. на суму  грн.
IRGP4760DPBF IRGP4760DPBF Infineon Technologies IRGP4760D%28-E%29PbF.pdf Description: IGBT 650V 90A TO-247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 170 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 48A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 70ns/140ns
Switching Energy: 1.7mJ (on), 1mJ (off)
Test Condition: 400V, 48A, 10Ohm, 15V
Gate Charge: 145 nC
Current - Collector (Ic) (Max): 90 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 144 A
Power - Max: 325 W
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IRGP4760-EPBF IRGP4760-EPBF Infineon Technologies IRGP4760%28-E%29PbF.pdf Description: IGBT 650V 90A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 48A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 70ns/140ns
Switching Energy: 1.7mJ (on), 1mJ (off)
Test Condition: 400V, 48A, 10Ohm, 15V
Gate Charge: 145 nC
Current - Collector (Ic) (Max): 90 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 144 A
Power - Max: 325 W
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IRGP4760PBF IRGP4760PBF Infineon Technologies IRGP4760%28-E%29PbF.pdf Description: IGBT 650V 90A TO-247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 48A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 70ns/140ns
Switching Energy: 1.7mJ (on), 1mJ (off)
Test Condition: 400V, 48A, 10Ohm, 15V
Gate Charge: 145 nC
Current - Collector (Ic) (Max): 90 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 144 A
Power - Max: 325 W
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BGS12WN6E6329XTSA1 BGS12WN6E6329XTSA1 Infineon Technologies 3_cip11424.pdf Description: IC RF SWITCH SPDT 9GHZ CELL WIFI
Packaging: Tape & Reel (TR)
Features: DC Blocked
Package / Case: 6-XFDFN
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: SPDT
RF Type: Bluetooth, UWB, WiFi, WLAN
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Insertion Loss: 1.12dB
Frequency Range: 50MHz ~ 9GHz
Topology: Reflective
Test Frequency: 9GHz
Isolation: 22dB
Supplier Device Package: PG-TSNP-6-2
IIP3: 70dBm
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
15000+10.61 грн
Мінімальне замовлення: 15000
В кошику  од. на суму  грн.
BGS12WN6E6329XTSA1 BGS12WN6E6329XTSA1 Infineon Technologies 3_cip11424.pdf Description: IC RF SWITCH SPDT 9GHZ CELL WIFI
Packaging: Cut Tape (CT)
Features: DC Blocked
Package / Case: 6-XFDFN
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: SPDT
RF Type: Bluetooth, UWB, WiFi, WLAN
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Insertion Loss: 1.12dB
Frequency Range: 50MHz ~ 9GHz
Topology: Reflective
Test Frequency: 9GHz
Isolation: 22dB
Supplier Device Package: PG-TSNP-6-2
IIP3: 70dBm
на замовлення 16405 шт:
термін постачання 21-31 дні (днів)
18+19.09 грн
20+16.15 грн
25+15.22 грн
100+13.04 грн
250+12.30 грн
500+11.77 грн
1000+11.09 грн
5000+10.06 грн
Мінімальне замовлення: 18
В кошику  од. на суму  грн.
2ED3145MC12LXUMA1 2ED3145MC12LXUMA1 Infineon Technologies Infineon-2ED314xMC12L-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c90530b3a019058e3ec3a2da2 Description: 2ED3145MC12LXUMA1
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 6A, 6.5A
Technology: Capacitive Coupling
Current - Output High, Low: 6A, 6.5A
Voltage - Isolation: 5700Vrms
Approval Agency: UL
Supplier Device Package: PG-DSO-14-71
Rise / Fall Time (Typ): 20ns, 20ns (Max)
Common Mode Transient Immunity (Min): 200kV/µs
Propagation Delay tpLH / tpHL (Max): 40ns, 40ns
Number of Channels: 2
Voltage - Output Supply: 35V
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2ED3145MC12LXUMA1 2ED3145MC12LXUMA1 Infineon Technologies Infineon-2ED314xMC12L-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c90530b3a019058e3ec3a2da2 Description: 2ED3145MC12LXUMA1
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 6A, 6.5A
Technology: Capacitive Coupling
Current - Output High, Low: 6A, 6.5A
Voltage - Isolation: 5700Vrms
Approval Agency: UL
Supplier Device Package: PG-DSO-14-71
Rise / Fall Time (Typ): 20ns, 20ns (Max)
Common Mode Transient Immunity (Min): 200kV/µs
Propagation Delay tpLH / tpHL (Max): 40ns, 40ns
Number of Channels: 2
Voltage - Output Supply: 35V
на замовлення 1480 шт:
термін постачання 21-31 дні (днів)
2+187.58 грн
10+133.88 грн
25+122.22 грн
100+102.69 грн
250+96.96 грн
500+93.51 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
CY7C024-25JXC CY7C024-25JXC Infineon Technologies CY7C024%2C41%2C025%2C0251%20RevC.pdf Description: IC SRAM 64KBIT PARALLEL 84PLCC
Packaging: Tube
Package / Case: 84-LCC (J-Lead)
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Dual Port, Asynchronous
Memory Format: SRAM
Supplier Device Package: 84-PLCC (29.31x29.31)
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Access Time: 25 ns
Memory Organization: 4K x 16
DigiKey Programmable: Not Verified
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CY7C0241-15AXC CY7C0241-15AXC Infineon Technologies CY7C024%2CA%2C0241%2C%20CY7C025%2C0251.pdf Description: IC SRAM 72KBIT PARALLEL 100TQFP
Packaging: Bulk
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 72Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Dual Port, Asynchronous
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x14)
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 4K x 18
DigiKey Programmable: Not Verified
на замовлення 848 шт:
термін постачання 21-31 дні (днів)
18+1318.02 грн
Мінімальне замовлення: 18
В кошику  од. на суму  грн.
CY7C0241E-15AXC CY7C0241E-15AXC Infineon Technologies CY7C024%2C241%2C25%2C251E_RevA.pdf Description: IC SRAM 72KBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 72Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Dual Port, Asynchronous
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x14)
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 4K x 18
DigiKey Programmable: Not Verified
на замовлення 79 шт:
термін постачання 21-31 дні (днів)
1+1212.65 грн
10+1082.46 грн
25+1048.49 грн
В кошику  од. на суму  грн.
CY7C0241E-15AXI CY7C0241E-15AXI Infineon Technologies CY7C024%2C241%2C25%2C251E_RevA.pdf Description: IC SRAM 72KBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 72Kbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Dual Port, Asynchronous
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x14)
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 4K x 18
DigiKey Programmable: Not Verified
на замовлення 69 шт:
термін постачання 21-31 дні (днів)
1+1230.91 грн
10+1097.00 грн
25+1082.18 грн
40+1002.83 грн
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CY7C024-55AXC CY7C024-55AXC Infineon Technologies CY7C024%2CA%2C0241%2C%20CY7C025%2C0251.pdf Description: IC SRAM 64KBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Dual Port, Asynchronous
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x14)
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 4K x 16
DigiKey Programmable: Not Verified
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CY7C024-25AXC CY7C024-25AXC Infineon Technologies CY7C024%2CA%2C0241%2C%20CY7C025%2C0251.pdf Description: IC SRAM 64KBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Dual Port, Asynchronous
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x14)
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Access Time: 25 ns
Memory Organization: 4K x 16
DigiKey Programmable: Not Verified
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CY7C024-25AXI CY7C024-25AXI Infineon Technologies CY7C024%2CA%2C0241%2C%20CY7C025%2C0251.pdf Description: IC SRAM 64KBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Dual Port, Asynchronous
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x14)
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Access Time: 25 ns
Memory Organization: 4K x 16
DigiKey Programmable: Not Verified
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CY7C0241-25AXC CY7C0241-25AXC Infineon Technologies CY7C024%2CA%2C0241%2C%20CY7C025%2C0251.pdf Description: IC SRAM 72KBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 72Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Dual Port, Asynchronous
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x14)
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Access Time: 25 ns
Memory Organization: 4K x 18
DigiKey Programmable: Not Verified
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CY7C024A-25JXC CY7C024A-25JXC Infineon Technologies CY7C024%2CA%2C0241%2C%20CY7C025%2C0251.pdf Description: IC SRAM 64KBIT PARALLEL 84PLCC
Packaging: Tube
Package / Case: 84-LCC (J-Lead)
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Dual Port, Asynchronous
Memory Format: SRAM
Supplier Device Package: 84-PLCC (29.31x29.31)
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Access Time: 25 ns
Memory Organization: 4K x 16
DigiKey Programmable: Not Verified
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CY7C0241-15AXI CY7C0241-15AXI Infineon Technologies CY7C024%2CA%2C0241%2C%20CY7C025%2C0251.pdf Description: IC SRAM 72KBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 72Kbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Dual Port, Asynchronous
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x14)
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 4K x 18
DigiKey Programmable: Not Verified
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CY7C024-55AC CY7C024-55AC Infineon Technologies CY7C024%2CA%2C0241%2C%20CY7C025%2C0251.pdf Description: IC SRAM 64KBIT PARALLEL 100TQFP
Packaging: Bag
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Dual Port, Asynchronous
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x14)
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 4K x 16
DigiKey Programmable: Not Verified
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CY7C024-15AC CY7C024-15AC Infineon Technologies CY7C024%2CA%2C0241%2C%20CY7C025%2C0251.pdf Description: IC SRAM 64KBIT PARALLEL 100TQFP
Packaging: Bag
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Dual Port, Asynchronous
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x14)
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 4K x 16
DigiKey Programmable: Not Verified
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CY7C024AV-25AC CY7C024AV-25AC Infineon Technologies CY7C0xxAV_RevH.pdf Description: IC SRAM 64KBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Dual Port, Asynchronous
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x14)
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Access Time: 25 ns
Memory Organization: 4K x 16
DigiKey Programmable: Not Verified
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CY7C024AV-20AXCT CY7C024AV-20AXCT Infineon Technologies CY7C024AV_25AV_26AV_RevT_8-1-17.pdf Description: IC SRAM 64KBIT PARALLEL 100TQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Dual Port, Asynchronous
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x14)
Write Cycle Time - Word, Page: 20ns
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 4K x 16
DigiKey Programmable: Not Verified
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IPT014N10N5ATMA1 Infineon-IPT014N10N5-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c85c5e5aa0185e454579c6dfa
IPT014N10N5ATMA1
Виробник: Infineon Technologies
Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: 362A
Supplier Device Package: PG-HSOF-8-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 100 V
на замовлення 1121 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+559.43 грн
10+365.27 грн
100+267.17 грн
500+218.73 грн
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CY8C4147LQE-S473T Infineon-Automotive_PSoC_4_PSoC_4100S_Plus_Datasheet_Programmable_System-on-Chip_(PSoC)-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee7ff0b70e8
CY8C4147LQE-S473T
Виробник: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 40QFN
Packaging: Tape & Reel (TR)
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Speed: 24MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b, 20x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, DMA, LCD, POR, PWM, Temp Sensor, WDT
Supplier Device Package: 40-QFN (6x6)
Grade: Automotive
Number of I/O: 34
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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CY91F522BSEPMC1-GSE1
CY91F522BSEPMC1-GSE1
Виробник: Infineon Technologies
Description: IC MCU 32BIT 320KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 320KB (320K x 8)
RAM Size: 56K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: FR81S
Data Converters: A/D 26x12b SAR; D/A 1x8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Number of I/O: 44
DigiKey Programmable: Not Verified
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CY7C1361A-100BGC CY7C1361A_63A.pdf
CY7C1361A-100BGC
Виробник: Infineon Technologies
Description: IC SRAM 9MBIT 100MHZ 119BGA
Packaging: Bag
Package / Case: 119-BGA
Mounting Type: Surface Mount
Memory Size: 9Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 100 MHz
Memory Format: SRAM
Supplier Device Package: 119-PBGA (14x22)
Memory Interface: Parallel
Access Time: 8 ns
Memory Organization: 256K x 36
DigiKey Programmable: Not Verified
на замовлення 77 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
36+637.61 грн
Мінімальне замовлення: 36
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PXM1310CDMG003XTMA1 Infineon-Multiphase_digital_controllers_PXE1_PXM1-DataSheet-v01_00-EN.pdf?fileId=5546d46272e49d2a01736b7cd95b3c4a
PXM1310CDMG003XTMA1
Виробник: Infineon Technologies
Description: PRIMARION CONTROLLER
Packaging: Cut Tape (CT)
Package / Case: 40-VFQFN Exposed Pad
Voltage - Output: Programmable
Mounting Type: Surface Mount
Number of Outputs: 6
Voltage - Input: 3V ~ 3.6V
Operating Temperature: -5°C ~ 85°C (TA)
Applications: Controller, Intel VR12.5
Supplier Device Package: PG-VQFN-40-13
на замовлення 4987 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+372.68 грн
10+274.07 грн
25+252.76 грн
100+215.25 грн
250+204.78 грн
500+198.47 грн
1000+190.11 грн
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IDWD30E120D7XKSA1 IDWD30E120D7_Rev1.00_12-15-23.pdf
IDWD30E120D7XKSA1
Виробник: Infineon Technologies
Description: DIODE GEN PURP 1200V 52A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 5A (Io)
Reverse Recovery Time (trr): 135 ns
Technology: Standard
Current - Average Rectified (Io): 52A
Supplier Device Package: PG-TO247-2-2
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 30 A
Current - Reverse Leakage @ Vr: 20 µA @ 1200 V
на замовлення 148 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+314.58 грн
10+221.00 грн
25+200.55 грн
Мінімальне замовлення: 2
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AIMBG120R060M1XTMA1 448_AIMBG120R.pdf
AIMBG120R060M1XTMA1
Виробник: Infineon Technologies
Description: SIC_DISCRETE
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 13A, 20V
Power Dissipation (Max): 202W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 4.3mA
Supplier Device Package: PG-TO263-7-12
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 800 V
Qualification: AEC-Q101
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AIMBG120R060M1XTMA1 448_AIMBG120R.pdf
AIMBG120R060M1XTMA1
Виробник: Infineon Technologies
Description: SIC_DISCRETE
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 13A, 20V
Power Dissipation (Max): 202W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 4.3mA
Supplier Device Package: PG-TO263-7-12
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 800 V
Qualification: AEC-Q101
на замовлення 949 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+931.28 грн
10+622.95 грн
100+556.05 грн
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CY8C24423A-24SXIT Infineon-CY8C24123A_CY8C24223A_CY8C24423A_PSoC_Programmable_System-on-Chip-DataSheet-v24_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec6aaf93d0f
CY8C24423A-24SXIT
Виробник: Infineon Technologies
Description: IC MCU 8BIT 4KB FLASH 28SOIC
Packaging: Tape & Reel (TR)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 4KB (4K x 8)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 10x14b; D/A 2x9b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V
Connectivity: I2C, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 28-SOIC
Number of I/O: 24
DigiKey Programmable: Not Verified
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IRF6655TRPBF IRF6655%28TR%29PbF.pdf
IRF6655TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 4.2A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric SH
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta), 19A (Tc)
Rds On (Max) @ Id, Vgs: 62mOhm @ 5A, 10V
Power Dissipation (Max): 2.2W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 25µA
Supplier Device Package: DIRECTFET™ SH
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 25 V
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CY7C024BV-15AXI
CY7C024BV-15AXI
Виробник: Infineon Technologies
Description: IC SRAM 64KBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Dual Port, Asynchronous
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x14)
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 4K x 16
DigiKey Programmable: Not Verified
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S6E2C18L0AGL2000A download
S6E2C18L0AGL2000A
Виробник: Infineon Technologies
Description: IC MCU 32BIT 1MB FLASH 216LQFP
Packaging: Tray
Package / Case: 216-LQFP
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 32x12b; D/A 2x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, I2C, LINbus, SD, SPI, UART/USART, USB
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 216-LQFP (24x24)
Number of I/O: 190
DigiKey Programmable: Not Verified
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S6J334BJDESE20000 Infineon-S6J3310_Series_S6J3320_Series_S6J3330_Series_S6J3340_Series_32-bit_Microcontroller_TRAVEO_T1G_Family-AdditionalTechnicalInformation-v17_00-EN.PDF?fileId=8ac78c8c7d0d8da4017d0edb39375e0e
S6J334BJDESE20000
Виробник: Infineon Technologies
Description: TRAVEO-40NM
Packaging: Tray
Package / Case: 176-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 240MHz
Program Memory Size: 1.5625MB (1.5625M x 8)
RAM Size: 544K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 112K x 8
Core Processor: Arm® Cortex®-R5F
Data Converters: A/D 48x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 3.6V
Connectivity: CANbus, CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 176-TEQFP (24x24)
Number of I/O: 150
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CY3205-DK PSoC%20Dev.%20Tools%20Selector%20Guide.pdf
CY3205-DK
Виробник: Infineon Technologies
Description: CY8C26443 EVAL BRD
Mounting Type: Socket
Type: MCU 8-Bit
Contents: Board(s), Cable(s), Power Supply, Accessories
Core Processor: M8C
Utilized IC / Part: CY8C26443
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S29GL064N90TFI020 Infineon-S29GL064N_S29GL032N_64_Mbit_32_Mbit_3_V_Page_Mode_MirrorBit_Flash-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed556fd548b&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi
S29GL064N90TFI020
Виробник: Infineon Technologies
Description: IC FLASH 64MBIT PARALLEL 56TSOP
Packaging: Tray
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Write Cycle Time - Word, Page: 90ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 8M x 8, 4M x 16
DigiKey Programmable: Verified
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S29GL064N90BAI040 Infineon-S29GL064N_S29GL032N_64_Mbit_32_Mbit_3_V_Page_Mode_MirrorBit_Flash-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed556fd548b&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi
S29GL064N90BAI040
Виробник: Infineon Technologies
Description: IC FLASH 64MBIT PARALLEL 48FBGA
Packaging: Tray
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 48-FBGA (8.15x6.15)
Write Cycle Time - Word, Page: 90ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 8M x 8, 4M x 16
DigiKey Programmable: Not Verified
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S29GL064N90FFA023 Infineon-S29GL064N_S29GL032N_64_Mbit_32_Mbit_3_V_Page_Mode_MirrorBit_Flash-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed556fd548b&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi
S29GL064N90FFA023
Виробник: Infineon Technologies
Description: IC FLASH 64MBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Write Cycle Time - Word, Page: 90ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 8M x 8, 4M x 16
DigiKey Programmable: Not Verified
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S29GL064N90TFA043
S29GL064N90TFA043
Виробник: Infineon Technologies
Description: IC FLASH 64MBIT PARALLEL 48TSOP
Packaging: Tape & Reel (TR)
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 48-TSOP
Grade: Automotive
Write Cycle Time - Word, Page: 90ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 8M x 8, 4M x 16
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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CY7C64013C-PXC
CY7C64013C-PXC
Виробник: Infineon Technologies
Description: IC MCU 8K FULL SPEED USB 28DIP
Packaging: Tube
Package / Case: 28-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Interface: I2C, USB, HAPI
RAM Size: 256 x 8
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4V ~ 5.25V
Controller Series: CY7C640xx
Program Memory Type: OTP (8kB)
Applications: USB Microcontroller
Core Processor: M8C
Supplier Device Package: 28-PDIP
Number of I/O: 19
DigiKey Programmable: Not Verified
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CY8C4124LQE-S413
CY8C4124LQE-S413
Виробник: Infineon Technologies
Description: IC MCU 32BIT 16KB FLASH 40UFQFN
Packaging: Tray
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b, 12x12b SAR; D/A 2x7b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 40-QFN (6x6)
Grade: Automotive
Number of I/O: 34
Qualification: AEC-Q100
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CY8C4124LQE-S413T
CY8C4124LQE-S413T
Виробник: Infineon Technologies
Description: IC MCU 32BIT 16KB FLASH 40UFQFN
Packaging: Tape & Reel (TR)
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b, 12x12b SAR; D/A 2x7b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 40-QFN (6x6)
Grade: Automotive
Number of I/O: 34
Qualification: AEC-Q100
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BSM75GB170DN2HOSA1 BSM75GB170DN2_Eupec.pdf
Виробник: Infineon Technologies
Description: IGBT MOD 1700V 110A 625W MOD
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 75A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 110 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 625 W
Input Capacitance (Cies) @ Vce: 11 nF @ 25 V
на замовлення 637 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+8234.02 грн
Мінімальне замовлення: 3
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TLE49614MXTMA1 Infineon-TLE4961_4M-DS-v01_00-en.pdf?fileId=db3a304340155f3d0140394b4fd67ddc
TLE49614MXTMA1
Виробник: Infineon Technologies
Description: MAG SWITCH IC HALL EFF SOT23-3
Packaging: Tape & Reel (TR)
Grade: Automotive
Qualification: AEC-Q100
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CY62128EV30LL-45SXIT Infineon-CY62128EV30_MoBL_1_Mbit_(128K_X_8)_Static_RAM-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe867f322f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY62128EV30LL-45SXIT
Виробник: Infineon Technologies
Description: IC SRAM 1MBIT PARALLEL 32SOIC
Packaging: Tape & Reel (TR)
Package / Case: 32-SOIC (0.445", 11.30mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-SOIC
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
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CY62128EV30LL-45SXIT Infineon-CY62128EV30_MoBL_1_Mbit_(128K_X_8)_Static_RAM-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe867f322f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY62128EV30LL-45SXIT
Виробник: Infineon Technologies
Description: IC SRAM 1MBIT PARALLEL 32SOIC
Packaging: Cut Tape (CT)
Package / Case: 32-SOIC (0.445", 11.30mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-SOIC
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
на замовлення 559 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+308.77 грн
10+263.52 грн
25+251.26 грн
50+227.47 грн
100+219.43 грн
250+209.23 грн
500+198.51 грн
Мінімальне замовлення: 2
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CY62128DV30LL-70ZXI CY62128DV30%20Rev2006.pdf
CY62128DV30LL-70ZXI
Виробник: Infineon Technologies
Description: IC SRAM 1MBIT PARALLEL 32TSOP I
Packaging: Tube
Package / Case: 32-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-TSOP I
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
на замовлення 891 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
128+179.45 грн
Мінімальне замовлення: 128
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CY62128DV30LL-70ZXI CY62128DV30%20Rev2006.pdf
CY62128DV30LL-70ZXI
Виробник: Infineon Technologies
Description: IC SRAM 1MBIT PARALLEL 32TSOP I
Packaging: Tube
Package / Case: 32-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-TSOP I
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
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IM66D120AXTMA1 Infineon-IM66D120A-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8c3de074018c63d5dd683a35
IM66D120AXTMA1
Виробник: Infineon Technologies
Description: MEMS GROWTH
Packaging: Tape & Reel (TR)
Output Type: Digital, PDM
Size / Dimension: 0.138" L x 0.104" W (3.50mm x 2.65mm)
Sensitivity: -26dB ±1dB @ 94dB SPL
Shape: Rectangular
Type: MEMS (Silicon)
S/N Ratio: 66dB
Termination: Solder Pads
Direction: Omnidirectional
Port Location: Bottom
Height (Max): 0.039" (0.99mm)
Voltage - Rated: 1.8 V
Current - Supply: 1.4 mA
Voltage Range: 1.62 V ~ 3.6 V
Frequency Range: 10 Hz ~ 10 kHz
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IM66D120AXTMA1 Infineon-IM66D120A-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8c3de074018c63d5dd683a35
IM66D120AXTMA1
Виробник: Infineon Technologies
Description: MEMS GROWTH
Packaging: Cut Tape (CT)
Output Type: Digital, PDM
Size / Dimension: 0.138" L x 0.104" W (3.50mm x 2.65mm)
Sensitivity: -26dB ±1dB @ 94dB SPL
Shape: Rectangular
Type: MEMS (Silicon)
S/N Ratio: 66dB
Termination: Solder Pads
Direction: Omnidirectional
Port Location: Bottom
Height (Max): 0.039" (0.99mm)
Voltage - Rated: 1.8 V
Current - Supply: 1.4 mA
Voltage Range: 1.62 V ~ 3.6 V
Frequency Range: 10 Hz ~ 10 kHz
на замовлення 4894 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+117.03 грн
10+91.84 грн
25+84.63 грн
50+74.68 грн
100+70.22 грн
250+67.01 грн
Мінімальне замовлення: 3
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S6E2C39J0AGB1000A download
S6E2C39J0AGB1000A
Виробник: Infineon Technologies
Description: IC MCU 32BIT 1.5MB FLASH 192FBGA
Packaging: Tray
Package / Case: 192-LFBGA
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 1.5MB (1.5M x 8)
RAM Size: 192K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 32x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, I2C, LINbus, SD, SPI, UART/USART, USB
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 192-FBGA (12x12)
Number of I/O: 152
DigiKey Programmable: Not Verified
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S6E2C38H0AGV2000A download
S6E2C38H0AGV2000A
Виробник: Infineon Technologies
Description: IC MCU 32BIT 1MB FLASH 144LQFP
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 24x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, I2C, LINbus, SD, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 144-LQFP (20x20)
Number of I/O: 120
DigiKey Programmable: Not Verified
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IPSA70R1K2P7SAKMA1 Infineon-IPSA70R1K2P7S-DS-v02_00-EN.pdf?fileId=5546d4625f2e26bc015f4d40e16a1340
IPSA70R1K2P7SAKMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 700V 4.5A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 900mA, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 40µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 400 V
Input Capacitance (Ciss) (Max) @ Vds: 174 pF @ 400 V
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
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62-0095PBF fundamentals-of-power-semiconductors
Виробник: Infineon Technologies
Description: MOSFET N-CH 20V 10A/12A 8SOIC
Packaging: Tube
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 12A (Tc)
Rds On (Max) @ Id, Vgs: 13.4mOhm @ 10A, 10V
Power Dissipation (Max): 2W
Vgs(th) (Max) @ Id: 2.55V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 10 V
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D2200N24TVFXPSA1 D2200N.pdf
D2200N24TVFXPSA1
Виробник: Infineon Technologies
Description: DIODE GEN PURP 2.4KV 2200A
Packaging: Tray
Package / Case: DO-200AC, K-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 2200A
Operating Temperature - Junction: -40°C ~ 160°C
Voltage - DC Reverse (Vr) (Max): 2400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 2000 A
Current - Reverse Leakage @ Vr: 150 mA @ 2400 V
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BSM15GD120DN2BOSA1
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 25A 145W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 15A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 145 W
Current - Collector Cutoff (Max): 500 µA
Input Capacitance (Cies) @ Vce: 100 pF @ 25 V
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IGB15N120S7ATMA1 Infineon-IGB15N120S7-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c914a3ac801917eb7408c326a
IGB15N120S7ATMA1
Виробник: Infineon Technologies
Description: IGBT TRENCH FS 1200V 34A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A
Supplier Device Package: PG-TO263-3-2
IGBT Type: Trench Field Stop
Test Condition: 600V, 15A, 10Ohm, 15V
Gate Charge: 97 nC
Current - Collector (Ic) (Max): 34 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 141 W
Td (on/off) @ 25°C: 16ns/156ns
Switching Energy: 900µJ (on), 680µJ (off)
на замовлення 589 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+320.39 грн
10+203.57 грн
100+144.04 грн
500+124.68 грн
Мінімальне замовлення: 2
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BGSX24M2U16E6327XTSA1 Infineon-BGSX24M2U16-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018dd17eaaed054c
BGSX24M2U16E6327XTSA1
Виробник: Infineon Technologies
Description: ANTENNA DEVICES
Packaging: Tape & Reel (TR)
Features: DC Blocked
Package / Case: 16-UFLGA Exposed Pad
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: DP4T
RF Type: 5G, LTE
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.1V ~ 1.3V, 1.65V ~ 1.95V
Insertion Loss: 1.14dB
Frequency Range: 400MHz ~ 7.125GHz
Topology: Absorptive
Test Frequency: 7.125GHz
Isolation: 35dB
Supplier Device Package: PG-ULGA-16-6
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AUIRFSL8408 AUIRFS%28L%298408.pdf
AUIRFSL8408
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 195A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 100A, 10V
Power Dissipation (Max): 294W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: TO-262
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 324 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10820 pF @ 25 V
на замовлення 450 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
146+146.96 грн
Мінімальне замовлення: 146
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ROTATEKNOB3D2GOKITTOBO1 ROTATEKNOB3D2GOKITTOBO1_Web.pdf
ROTATEKNOB3D2GOKITTOBO1
Виробник: Infineon Technologies
Description: ROTATE & PUSH BUTTON CONTROL ELE
Packaging: Bulk
For Use With/Related Products: 3D Magnetic Sensor
Accessory Type: Knob
на замовлення 6 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2129.82 грн
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IRGP4760DPBF IRGP4760D%28-E%29PbF.pdf
IRGP4760DPBF
Виробник: Infineon Technologies
Description: IGBT 650V 90A TO-247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 170 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 48A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 70ns/140ns
Switching Energy: 1.7mJ (on), 1mJ (off)
Test Condition: 400V, 48A, 10Ohm, 15V
Gate Charge: 145 nC
Current - Collector (Ic) (Max): 90 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 144 A
Power - Max: 325 W
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IRGP4760-EPBF IRGP4760%28-E%29PbF.pdf
IRGP4760-EPBF
Виробник: Infineon Technologies
Description: IGBT 650V 90A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 48A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 70ns/140ns
Switching Energy: 1.7mJ (on), 1mJ (off)
Test Condition: 400V, 48A, 10Ohm, 15V
Gate Charge: 145 nC
Current - Collector (Ic) (Max): 90 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 144 A
Power - Max: 325 W
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IRGP4760PBF IRGP4760%28-E%29PbF.pdf
IRGP4760PBF
Виробник: Infineon Technologies
Description: IGBT 650V 90A TO-247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 48A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 70ns/140ns
Switching Energy: 1.7mJ (on), 1mJ (off)
Test Condition: 400V, 48A, 10Ohm, 15V
Gate Charge: 145 nC
Current - Collector (Ic) (Max): 90 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 144 A
Power - Max: 325 W
товару немає в наявності
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BGS12WN6E6329XTSA1 3_cip11424.pdf
BGS12WN6E6329XTSA1
Виробник: Infineon Technologies
Description: IC RF SWITCH SPDT 9GHZ CELL WIFI
Packaging: Tape & Reel (TR)
Features: DC Blocked
Package / Case: 6-XFDFN
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: SPDT
RF Type: Bluetooth, UWB, WiFi, WLAN
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Insertion Loss: 1.12dB
Frequency Range: 50MHz ~ 9GHz
Topology: Reflective
Test Frequency: 9GHz
Isolation: 22dB
Supplier Device Package: PG-TSNP-6-2
IIP3: 70dBm
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
15000+10.61 грн
Мінімальне замовлення: 15000
В кошику  од. на суму  грн.
BGS12WN6E6329XTSA1 3_cip11424.pdf
BGS12WN6E6329XTSA1
Виробник: Infineon Technologies
Description: IC RF SWITCH SPDT 9GHZ CELL WIFI
Packaging: Cut Tape (CT)
Features: DC Blocked
Package / Case: 6-XFDFN
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: SPDT
RF Type: Bluetooth, UWB, WiFi, WLAN
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Insertion Loss: 1.12dB
Frequency Range: 50MHz ~ 9GHz
Topology: Reflective
Test Frequency: 9GHz
Isolation: 22dB
Supplier Device Package: PG-TSNP-6-2
IIP3: 70dBm
на замовлення 16405 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
18+19.09 грн
20+16.15 грн
25+15.22 грн
100+13.04 грн
250+12.30 грн
500+11.77 грн
1000+11.09 грн
5000+10.06 грн
Мінімальне замовлення: 18
В кошику  од. на суму  грн.
2ED3145MC12LXUMA1 Infineon-2ED314xMC12L-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c90530b3a019058e3ec3a2da2
2ED3145MC12LXUMA1
Виробник: Infineon Technologies
Description: 2ED3145MC12LXUMA1
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 6A, 6.5A
Technology: Capacitive Coupling
Current - Output High, Low: 6A, 6.5A
Voltage - Isolation: 5700Vrms
Approval Agency: UL
Supplier Device Package: PG-DSO-14-71
Rise / Fall Time (Typ): 20ns, 20ns (Max)
Common Mode Transient Immunity (Min): 200kV/µs
Propagation Delay tpLH / tpHL (Max): 40ns, 40ns
Number of Channels: 2
Voltage - Output Supply: 35V
товару немає в наявності
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2ED3145MC12LXUMA1 Infineon-2ED314xMC12L-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c90530b3a019058e3ec3a2da2
2ED3145MC12LXUMA1
Виробник: Infineon Technologies
Description: 2ED3145MC12LXUMA1
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 6A, 6.5A
Technology: Capacitive Coupling
Current - Output High, Low: 6A, 6.5A
Voltage - Isolation: 5700Vrms
Approval Agency: UL
Supplier Device Package: PG-DSO-14-71
Rise / Fall Time (Typ): 20ns, 20ns (Max)
Common Mode Transient Immunity (Min): 200kV/µs
Propagation Delay tpLH / tpHL (Max): 40ns, 40ns
Number of Channels: 2
Voltage - Output Supply: 35V
на замовлення 1480 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+187.58 грн
10+133.88 грн
25+122.22 грн
100+102.69 грн
250+96.96 грн
500+93.51 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
CY7C024-25JXC CY7C024%2C41%2C025%2C0251%20RevC.pdf
CY7C024-25JXC
Виробник: Infineon Technologies
Description: IC SRAM 64KBIT PARALLEL 84PLCC
Packaging: Tube
Package / Case: 84-LCC (J-Lead)
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Dual Port, Asynchronous
Memory Format: SRAM
Supplier Device Package: 84-PLCC (29.31x29.31)
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Access Time: 25 ns
Memory Organization: 4K x 16
DigiKey Programmable: Not Verified
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CY7C0241-15AXC CY7C024%2CA%2C0241%2C%20CY7C025%2C0251.pdf
CY7C0241-15AXC
Виробник: Infineon Technologies
Description: IC SRAM 72KBIT PARALLEL 100TQFP
Packaging: Bulk
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 72Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Dual Port, Asynchronous
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x14)
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 4K x 18
DigiKey Programmable: Not Verified
на замовлення 848 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
18+1318.02 грн
Мінімальне замовлення: 18
В кошику  од. на суму  грн.
CY7C0241E-15AXC CY7C024%2C241%2C25%2C251E_RevA.pdf
CY7C0241E-15AXC
Виробник: Infineon Technologies
Description: IC SRAM 72KBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 72Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Dual Port, Asynchronous
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x14)
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 4K x 18
DigiKey Programmable: Not Verified
на замовлення 79 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1212.65 грн
10+1082.46 грн
25+1048.49 грн
В кошику  од. на суму  грн.
CY7C0241E-15AXI CY7C024%2C241%2C25%2C251E_RevA.pdf
CY7C0241E-15AXI
Виробник: Infineon Technologies
Description: IC SRAM 72KBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 72Kbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Dual Port, Asynchronous
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x14)
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 4K x 18
DigiKey Programmable: Not Verified
на замовлення 69 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1230.91 грн
10+1097.00 грн
25+1082.18 грн
40+1002.83 грн
В кошику  од. на суму  грн.
CY7C024-55AXC CY7C024%2CA%2C0241%2C%20CY7C025%2C0251.pdf
CY7C024-55AXC
Виробник: Infineon Technologies
Description: IC SRAM 64KBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Dual Port, Asynchronous
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x14)
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 4K x 16
DigiKey Programmable: Not Verified
товару немає в наявності
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CY7C024-25AXC CY7C024%2CA%2C0241%2C%20CY7C025%2C0251.pdf
CY7C024-25AXC
Виробник: Infineon Technologies
Description: IC SRAM 64KBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Dual Port, Asynchronous
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x14)
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Access Time: 25 ns
Memory Organization: 4K x 16
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
CY7C024-25AXI CY7C024%2CA%2C0241%2C%20CY7C025%2C0251.pdf
CY7C024-25AXI
Виробник: Infineon Technologies
Description: IC SRAM 64KBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Dual Port, Asynchronous
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x14)
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Access Time: 25 ns
Memory Organization: 4K x 16
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
CY7C0241-25AXC CY7C024%2CA%2C0241%2C%20CY7C025%2C0251.pdf
CY7C0241-25AXC
Виробник: Infineon Technologies
Description: IC SRAM 72KBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 72Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Dual Port, Asynchronous
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x14)
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Access Time: 25 ns
Memory Organization: 4K x 18
DigiKey Programmable: Not Verified
товару немає в наявності
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CY7C024A-25JXC CY7C024%2CA%2C0241%2C%20CY7C025%2C0251.pdf
CY7C024A-25JXC
Виробник: Infineon Technologies
Description: IC SRAM 64KBIT PARALLEL 84PLCC
Packaging: Tube
Package / Case: 84-LCC (J-Lead)
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Dual Port, Asynchronous
Memory Format: SRAM
Supplier Device Package: 84-PLCC (29.31x29.31)
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Access Time: 25 ns
Memory Organization: 4K x 16
DigiKey Programmable: Not Verified
товару немає в наявності
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CY7C0241-15AXI CY7C024%2CA%2C0241%2C%20CY7C025%2C0251.pdf
CY7C0241-15AXI
Виробник: Infineon Technologies
Description: IC SRAM 72KBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 72Kbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Dual Port, Asynchronous
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x14)
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 4K x 18
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
CY7C024-55AC CY7C024%2CA%2C0241%2C%20CY7C025%2C0251.pdf
CY7C024-55AC
Виробник: Infineon Technologies
Description: IC SRAM 64KBIT PARALLEL 100TQFP
Packaging: Bag
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Dual Port, Asynchronous
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x14)
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 4K x 16
DigiKey Programmable: Not Verified
товару немає в наявності
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CY7C024-15AC CY7C024%2CA%2C0241%2C%20CY7C025%2C0251.pdf
CY7C024-15AC
Виробник: Infineon Technologies
Description: IC SRAM 64KBIT PARALLEL 100TQFP
Packaging: Bag
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Dual Port, Asynchronous
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x14)
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 4K x 16
DigiKey Programmable: Not Verified
товару немає в наявності
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CY7C024AV-25AC CY7C0xxAV_RevH.pdf
CY7C024AV-25AC
Виробник: Infineon Technologies
Description: IC SRAM 64KBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Dual Port, Asynchronous
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x14)
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Access Time: 25 ns
Memory Organization: 4K x 16
DigiKey Programmable: Not Verified
товару немає в наявності
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CY7C024AV-20AXCT CY7C024AV_25AV_26AV_RevT_8-1-17.pdf
CY7C024AV-20AXCT
Виробник: Infineon Technologies
Description: IC SRAM 64KBIT PARALLEL 100TQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Dual Port, Asynchronous
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x14)
Write Cycle Time - Word, Page: 20ns
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 4K x 16
DigiKey Programmable: Not Verified
товару немає в наявності
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