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SLB9673XU20FW2613XTMA1 SLB9673XU20FW2613XTMA1 Infineon Technologies SLB9673AU20FW2610XTMA1.pdf Description: OPTIGA TPM SLB9673
Packaging: Cut Tape (CT)
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 1.95V, 3V ~ 3.6V
Controller Series: OPTIGA™ TPM
Program Memory Type: NVM (51kB)
Applications: Trusted Platform Module (TPM)
Core Processor: 32-Bit
Supplier Device Package: PG-UQFN-32-1
Number of I/O: 3
на замовлення 7932 шт:
термін постачання 21-31 дні (днів)
2+306.67 грн
10+223.82 грн
25+206.04 грн
100+174.92 грн
250+166.15 грн
500+160.85 грн
1000+153.93 грн
2500+149.41 грн
Мінімальне замовлення: 2
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SLB9673AU20FW2613XTMA1 SLB9673AU20FW2613XTMA1 Infineon Technologies SLB9673AU20FW2610XTMA1.pdf Description: OPTIGA TPM SLB9674
Packaging: Tape & Reel (TR)
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.65V ~ 1.95V, 3V ~ 3.6V
Controller Series: OPTIGA™ TPM
Program Memory Type: NVM (51kB)
Applications: Trusted Platform Module (TPM)
Core Processor: 32-Bit
Supplier Device Package: PG-UQFN-32-1
Number of I/O: 3
на замовлення 3975 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
SLB9673AU20FW2613XTMA1 SLB9673AU20FW2613XTMA1 Infineon Technologies SLB9673AU20FW2610XTMA1.pdf Description: OPTIGA TPM SLB9674
Packaging: Cut Tape (CT)
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.65V ~ 1.95V, 3V ~ 3.6V
Controller Series: OPTIGA™ TPM
Program Memory Type: NVM (51kB)
Applications: Trusted Platform Module (TPM)
Core Processor: 32-Bit
Supplier Device Package: PG-UQFN-32-1
Number of I/O: 3
на замовлення 4519 шт:
термін постачання 21-31 дні (днів)
1+367.51 грн
10+270.05 грн
25+249.04 грн
100+212.10 грн
250+201.79 грн
500+195.57 грн
1000+187.33 грн
2500+182.02 грн
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SLS32AIA010MMUSON10XTMA2 SLS32AIA010MMUSON10XTMA2 Infineon Technologies Infineon-OPTIGA%20TRUST%20M%20SLS32AIA-DataSheet-v03_40-EN.pdf?fileId=5546d4626c1f3dc3016c853c271a7e4a Description: SECURITY ICS / AUTHENTICATION IC
Packaging: Tape & Reel (TR)
Package / Case: 10-UFDFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C
Operating Temperature: -25°C ~ 85°C (TA)
Voltage - Supply: 1.62V ~ 5.5V
Controller Series: OPTIGA™ Trust M
Program Memory Type: NVM (10kB)
Applications: Secure Element
Core Processor: 16-Bit
Supplier Device Package: PG-USON-10-2
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SLS32AIA010MMUSON10XTMA2 SLS32AIA010MMUSON10XTMA2 Infineon Technologies Infineon-OPTIGA%20TRUST%20M%20SLS32AIA-DataSheet-v03_40-EN.pdf?fileId=5546d4626c1f3dc3016c853c271a7e4a Description: SECURITY ICS / AUTHENTICATION IC
Packaging: Cut Tape (CT)
Package / Case: 10-UFDFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C
Operating Temperature: -25°C ~ 85°C (TA)
Voltage - Supply: 1.62V ~ 5.5V
Controller Series: OPTIGA™ Trust M
Program Memory Type: NVM (10kB)
Applications: Secure Element
Core Processor: 16-Bit
Supplier Device Package: PG-USON-10-2
на замовлення 47 шт:
термін постачання 21-31 дні (днів)
3+134.84 грн
10+121.84 грн
25+118.38 грн
Мінімальне замовлення: 3
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IRFH7921TRPBF IRFH7921TRPBF Infineon Technologies IRFH7921PBF.pdf description Description: MOSFET N-CH 30V 15A/34A PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 34A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 15A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: PQFN (5x6) Single Die
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1210 pF @ 15 V
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7GA830178 Infineon Technologies Description: IC MCU 32BIT 144LQFP
Packaging: Tray
DigiKey Programmable: Not Verified
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FP15R12YT3BOMA1 Infineon Technologies Orderable_Part_Number_OPN_Translation_Table_Web.pdf Description: IGBT MOD 1200V 25A 110W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 15A
NTC Thermistor: Yes
Supplier Device Package: Module
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 110 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 1.1 nF @ 25 V
товару немає в наявності
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CY8C4025AZI-S413 CY8C4025AZI-S413 Infineon Technologies Infineon-PSoC_4_PSoC_4000S_Datasheet_Programmable_System-on-Chip_(PSoC_)-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eda97715cf1&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-file Description: IC MCU 32BIT 32KB FLASH 48TQFP
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 1x10b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 48-TQFP (7x7)
Number of I/O: 36
DigiKey Programmable: Not Verified
на замовлення 2412 шт:
термін постачання 21-31 дні (днів)
2+195.68 грн
10+141.16 грн
25+129.43 грн
100+109.36 грн
250+103.59 грн
500+101.18 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IAUC120N06S5N015ATMA1 IAUC120N06S5N015ATMA1 Infineon Technologies Infineon-IAUC120N06S5N015-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8fc2dd9c018fde5da2e2785f Description: MOSFET_)40V 60V)
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tj)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 60A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 94µA
Supplier Device Package: PG-TDSON-8-43
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6952 pF @ 30 V
Qualification: AEC-Q101
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IPP034N08N5XKSA1 IPP034N08N5XKSA1 Infineon Technologies Infineon-IPP034N08N5-DS-v02_00-EN.pdf?fileId=5546d4624ad04ef9014ade84c8b17b40 Description: TRENCH 40<-<100V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 100A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 108µA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6240 pF @ 40 V
на замовлення 500 шт:
термін постачання 21-31 дні (днів)
3+141.41 грн
50+85.20 грн
100+83.78 грн
500+76.42 грн
Мінімальне замовлення: 3
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TLF12505AUMA1 TLF12505AUMA1 Infineon Technologies Description: IC POWER STAGE PG-VIQFN-36
Packaging: Strip
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CY9AF111KPMC-GE1 CY9AF111KPMC-GE1 Infineon Technologies Description: MULTI-MARKET MCUS
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 96KB (96K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 8x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 48-LQFP (7x7)
Number of I/O: 36
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IR35210MTRPBF IR35210MTRPBF Infineon Technologies Description: IC CONTROLLER 40QFN
Packaging: Bulk
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 100°C (TJ)
Voltage - Supply: 4.75V ~ 7.5V
Applications: Multiphase Controller
Current - Supply: 10mA
Supplier Device Package: 32-MLPQ (5x5)
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
83+286.49 грн
Мінімальне замовлення: 83
В кошику  од. на суму  грн.
IRFZ46ZSTRLPBF IRFZ46ZSTRLPBF Infineon Technologies infineon-irfz46z-datasheet-en.pdf Description: MOSFET N-CH 55V 51A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Rds On (Max) @ Id, Vgs: 13.6mOhm @ 31A, 10V
Power Dissipation (Max): 82W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1460 pF @ 25 V
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D2601NH90TXPSA1 D2601NH90TXPSA1 Infineon Technologies Infineon-D2601NH-DS-v05_00-en_de.pdf?fileId=db3a304412b407950112b42fecdb4e58 Description: DIODE GEN PURP 9KV 1790A
Packaging: Tray
Package / Case: DO-200AE
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1790A
Operating Temperature - Junction: 0°C ~ 140°C
Voltage - DC Reverse (Vr) (Max): 9000 V
Voltage - Forward (Vf) (Max) @ If: 5.5 V @ 4000 A
Current - Reverse Leakage @ Vr: 150 mA @ 9000 V
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CY7C66113C-LTXC CY7C66113C-LTXC Infineon Technologies CY7C66013%2C%2066113C.pdf Description: IC MCU 8K USB HUB 4PORT 56VQFN
Packaging: Tray
Package / Case: 56-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, USB, HAPI
RAM Size: 256 x 8
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4V ~ 5.25V
Controller Series: USB Hub
Program Memory Type: OTP (8kB)
Applications: USB Hub/Microcontroller
Core Processor: M8
Supplier Device Package: 56-QFN (8x8)
Number of I/O: 31
DigiKey Programmable: Not Verified
на замовлення 480 шт:
термін постачання 21-31 дні (днів)
44+543.30 грн
Мінімальне замовлення: 44
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T731N44TOHXPSA1 T731N44TOHXPSA1 Infineon Technologies Infineon-T731N-DataSheet-v07_00-EN.pdf?fileId=5546d4627112d9d501712b08e169404e Description: SCR MODULE 4.4KV 2010A TO-200AC
Packaging: Tray
Package / Case: TO-200AC
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 350 mA
Current - Gate Trigger (Igt) (Max): 350 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 18000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 1280 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (RMS)) (Max): 2010 A
Voltage - Off State: 4.4 kV
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T1401N42TOHXPSA1 T1401N42TOHXPSA1 Infineon Technologies Infineon-T1401N-DS-v06_00-en_de.pdf?fileId=db3a3043156fd5730115a390fbba08c8 Description: SCR MODULE 4.4KV 2500A TO-200AF
Packaging: Tray
Package / Case: TO-200AF
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 350 mA
Current - Gate Trigger (Igt) (Max): 350 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 40000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 2290 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (RMS)) (Max): 2500 A
Voltage - Off State: 4.4 kV
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T680N14TOFXPSA1 Infineon Technologies Description: SCR MODULE 1400V 1250A DO200AA
Packaging: Tray
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 11000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 681 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Current - On State (It (RMS)) (Max): 1250 A
Voltage - Off State: 1.4 kV
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EVALPMG1S1DRPTOBO1 EVALPMG1S1DRPTOBO1 Infineon Technologies Infineon-CYPM13xx_EZ-PD_PMG1-S3_Power_delivery_MCU_Gen1-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7ddc01d7017ddd0263aa58f3 Description: EVALPMG1S1DRPTOBO1
Packaging: Box
Function: USB PD Controller (Power Delivery)
Type: Power Management
Utilized IC / Part: EZ-PD PMG1-S1
Supplied Contents: Board(s)
Embedded: Yes, MCU
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
1+10741.59 грн
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IPBE65R115CFD7AATMA1 IPBE65R115CFD7AATMA1 Infineon Technologies Infineon-IPBE65R115CFD7A-DataSheet-v02_01-EN.pdf?fileId=5546d46270c4f93e0170f33391547c90 Description: AUTOMOTIVE_COOLMOS PG-TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 115mOhm @ 9.7A, 10V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 490µA
Supplier Device Package: PG-TO263-7-11
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 400 V
Grade: Automotive
Qualification: AEC-Q101
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IPBE65R115CFD7AATMA1 IPBE65R115CFD7AATMA1 Infineon Technologies Infineon-IPBE65R115CFD7A-DataSheet-v02_01-EN.pdf?fileId=5546d46270c4f93e0170f33391547c90 Description: AUTOMOTIVE_COOLMOS PG-TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 115mOhm @ 9.7A, 10V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 490µA
Supplier Device Package: PG-TO263-7-11
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 400 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 971 шт:
термін постачання 21-31 дні (днів)
1+372.44 грн
10+227.14 грн
100+170.65 грн
500+153.90 грн
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IRFB23N15DPBF IRFB23N15DPBF Infineon Technologies irfs23n15dpbf.pdf?fileId=5546d462533600a4015356361eff2140 Description: MOSFET N-CH 150V 23A TO220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 14A, 10V
Power Dissipation (Max): 3.8W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
на замовлення 31931 шт:
термін постачання 21-31 дні (днів)
337+62.88 грн
Мінімальне замовлення: 337
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S29GL064S80DHV020 S29GL064S80DHV020 Infineon Technologies Infineon-S29GL064S_64-MBIT_(8_MBYTE)_3.0_V_FLASH_MEMORY-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed12bd84d2d&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC FLASH 64MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 80 ns
Memory Organization: 8M x 8, 4M x 16
DigiKey Programmable: Not Verified
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TLE4953CBAMA1 TLE4953CBAMA1 Infineon Technologies Infineon-TLE4953-DataSheet-v04_01-EN.pdf?fileId=db3a304319c6f18c011a2a95ec0b12d4 Description: MAG SWITCH SPEC PURP SSO-2-2
Packaging: Bulk
Package / Case: 2-SIP, SSO-2-2
Output Type: Current Source
Polarization: North Pole, South Pole
Mounting Type: Through Hole
Function: Special Purpose
Voltage - Supply: 4.5V ~ 20V
Technology: Hall Effect
Current - Supply (Max): 16.8mA
Supplier Device Package: PG-SSO-2-2
Grade: Automotive
Qualification: AEC-Q100
на замовлення 428 шт:
термін постачання 21-31 дні (днів)
122+195.19 грн
Мінімальне замовлення: 122
В кошику  од. на суму  грн.
IRL3714ZSPBF IRL3714ZSPBF Infineon Technologies IRL3714Z%28S%2CL%29PbF.pdf description Description: MOSFET N-CH 20V 36A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 15A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 2.55V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 10 V
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IM241S6T2B2AKMA1 Infineon Technologies Description: CIPOS MICRO
Packaging: Tube
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CY62148ESL-55ZAXIT CY62148ESL-55ZAXIT Infineon Technologies Infineon-CY62148ESL_MOBL_4_MBIT_(512K_X_8)_STATIC_RAM-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe70473204&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC SRAM 4MBIT PARALLEL 32STSOP
Packaging: Tape & Reel (TR)
Package / Case: 32-TFSOP (0.465", 11.80mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V, 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-sTSOP
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
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CY62148ESL-55ZAXIT CY62148ESL-55ZAXIT Infineon Technologies Infineon-CY62148ESL_MOBL_4_MBIT_(512K_X_8)_STATIC_RAM-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe70473204&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC SRAM 4MBIT PARALLEL 32STSOP
Packaging: Cut Tape (CT)
Package / Case: 32-TFSOP (0.465", 11.80mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V, 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-sTSOP
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
на замовлення 1485 шт:
термін постачання 21-31 дні (днів)
1+610.05 грн
10+540.98 грн
25+529.72 грн
50+495.40 грн
100+444.52 грн
250+431.08 грн
500+403.21 грн
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CY62148DV30LL-70ZSXA CY62148DV30LL-70ZSXA Infineon Technologies CY62148DV30.pdf Description: IC SRAM 4MBIT PARALLEL 32TSOP II
Packaging: Tube
Package / Case: 32-SOIC (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-TSOP II
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
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CY62148G-45ZSXI CY62148G-45ZSXI Infineon Technologies Infineon-CY62148G_MoBL_4-Mbit_(512K_words_X_8_bit)_Static_RAM_With_Error-Correcting_Code_(ECC)-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed904c65aae&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_e Description: IC SRAM 4MBIT PARALLEL 32TSOP II
Packaging: Tray
Package / Case: 32-SOIC (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-TSOP II
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
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CY62148ELL-45ZSXA CY62148ELL-45ZSXA Infineon Technologies Infineon-CY62148E_MoBL_4-Mbit_(512_K_8)_Static_RAM-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebeea5a32e0&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC SRAM 4MBIT PARALLEL 32TSOP II
Packaging: Tray
Package / Case: 32-SOIC (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-TSOP II
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
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CY62148GN30-45SXIT CY62148GN30-45SXIT Infineon Technologies Infineon-CY62148GN_MoBL_4-Mbit_(512_K_8)_Static_RAM-DataSheet-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed80b9e5996&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC SRAM 4MBIT PARALLEL 32TSOP II
Packaging: Tape & Reel (TR)
Package / Case: 32-SOIC (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-TSOP II
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
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CY62148GN30-45ZSXIT CY62148GN30-45ZSXIT Infineon Technologies Infineon-CY62148GN_MoBL_4-Mbit_(512_K_8)_Static_RAM-DataSheet-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed80b9e5996&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC SRAM 4MBIT PARALLEL 32TSOP II
Packaging: Tape & Reel (TR)
Package / Case: 32-SOIC (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-TSOP II
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
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CY62148GN30-45SXI CY62148GN30-45SXI Infineon Technologies Infineon-CY62148GN_MoBL_4-Mbit_(512_K_8)_Static_RAM-DataSheet-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed80b9e5996&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC SRAM 4MBIT PARALLEL 32TSOP II
Packaging: Tube
Package / Case: 32-SOIC (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-TSOP II
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
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DF100R07W1H5FPB54BPSA2 DF100R07W1H5FPB54BPSA2 Infineon Technologies Infineon-DF100R07W1H5FP_B54-DS-v03_00-EN.pdf?fileId=5546d4625b3ca4ec015b5761855903ab Description: IGBT MODULE 650V 40A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.55V @ 15V, 25A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Cutoff (Max): 40 µA
Input Capacitance (Cies) @ Vce: 2.8 nF @ 25 V
на замовлення 67 шт:
термін постачання 21-31 дні (днів)
9+2252.55 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
FP40R12KT3GBOSA1 FP40R12KT3GBOSA1 Infineon Technologies Infineon-FP40R12KT3G-DS-v02_01-en_de.pdf?fileId=db3a304412b407950112b4316e585446 Description: IGBT MOD 1200V 55A 210W MOD
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 401A
NTC Thermistor: Yes
Supplier Device Package: Module
Current - Collector (Ic) (Max): 55 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 210 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 2.5 nF @ 25 V
на замовлення 203 шт:
термін постачання 21-31 дні (днів)
3+6709.69 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IRGP4750D-EPBF IRGP4750D-EPBF Infineon Technologies IRGP4750D%28-E%29PbF.pdf Description: IGBT 650V 70A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 150 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 35A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 50ns/105ns
Switching Energy: 1.3mJ (on), 500µJ (off)
Test Condition: 400V, 35A, 10Ohm, 15V
Gate Charge: 105 nC
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 105 A
Power - Max: 273 W
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IRGP4750DPBF IRGP4750DPBF Infineon Technologies IRGP4750D%28-E%29PbF.pdf Description: IGBT 650V 70A TO-247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 150 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 35A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 50ns/105ns
Switching Energy: 1.3mJ (on), 500µJ (off)
Test Condition: 400V, 35A, 10Ohm, 15V
Gate Charge: 105 nC
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 105 A
Power - Max: 273 W
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IPT60T065S7XTMA1 IPT60T065S7XTMA1 Infineon Technologies Infineon-IPT60T065S7-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c8afe5bd0018b4c5977be7aee Description: HIGH POWER_NEW
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 8A, 12V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 470µA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 1932 pF @ 300 V
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IPT60T065S7XTMA1 IPT60T065S7XTMA1 Infineon Technologies Infineon-IPT60T065S7-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c8afe5bd0018b4c5977be7aee Description: HIGH POWER_NEW
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 8A, 12V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 470µA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 1932 pF @ 300 V
на замовлення 1930 шт:
термін постачання 21-31 дні (днів)
1+465.35 грн
10+300.22 грн
100+216.48 грн
500+169.68 грн
1000+169.56 грн
В кошику  од. на суму  грн.
IPF129N20NM6ATMA1 IPF129N20NM6ATMA1 Infineon Technologies Infineon-IPF129N20NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8d2fe47b018d326b6ae00c86 Description: IPF129N20NM6ATMA1
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 87A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 65A, 15V
Power Dissipation (Max): 3.8W (Ta), 234W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 129µA
Supplier Device Package: PG-TO263-7-3
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 100 V
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IPF129N20NM6ATMA1 IPF129N20NM6ATMA1 Infineon Technologies Infineon-IPF129N20NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8d2fe47b018d326b6ae00c86 Description: IPF129N20NM6ATMA1
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 87A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 65A, 15V
Power Dissipation (Max): 3.8W (Ta), 234W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 129µA
Supplier Device Package: PG-TO263-7-3
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 100 V
на замовлення 797 шт:
термін постачання 21-31 дні (днів)
1+446.44 грн
10+287.71 грн
100+207.11 грн
500+162.11 грн
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CY62148ELL-45SXI CY62148ELL-45SXI Infineon Technologies Infineon-CY62148E_MoBL_4-Mbit_(512_K_8)_Static_RAM-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebeea5a32e0&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC SRAM 4MBIT PARALLEL 32SOIC
Packaging: Tube
Package / Case: 32-SOIC (0.445", 11.30mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-SOIC
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
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DD560N45KHPSA1 Infineon Technologies Description: THYR / DIODE MODULE DK
Packaging: Tray
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TD210N16KOFHPSA1 TD210N16KOFHPSA1 Infineon Technologies Infineon-TT210N-DS-v03_01-en_de.pdf?fileId=db3a304412b407950112b42f79f24bbd Description: SCR MODULE 1800V 410A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 6600A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 261 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 410 A
Voltage - Off State: 1.8 kV
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
2+11864.26 грн
Мінімальне замовлення: 2
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DD710N16KS20HPSA1 Infineon Technologies Description: THYR / DIODE MODULE DK
Packaging: Tray
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T2810N16TOFVTXPSA1 T2810N16TOFVTXPSA1 Infineon Technologies Infineon-T2810N-DataSheet-v03_01-EN.pdf?fileId=5546d4627112d9d501712b08c44a4042 Description: SCR MODULE 2200V 5800A DO200AE
Packaging: Tray
Package / Case: DO-200AE
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 58000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 2810 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (RMS)) (Max): 5800 A
Voltage - Off State: 2.2 kV
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TD120N16SOFHPSA1 TD120N16SOFHPSA1 Infineon Technologies Infineon-TT120N-DS-v03_04-EN.pdf?fileId=5546d46148a8bbb90148d04e762d2e47 Description: THYRISTOR MODULE 1600V 120A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 130°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 250 mA
Current - Gate Trigger (Igt) (Max): 100 mA
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 119 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (RMS)) (Max): 190 A
Voltage - Off State: 1.6 kV
на замовлення 101 шт:
термін постачання 21-31 дні (днів)
1+2528.98 грн
12+1756.62 грн
36+1567.42 грн
84+1464.33 грн
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T720N16TOFXPSA1 T720N16TOFXPSA1 Infineon Technologies Infineon-T720N-DS-v01_00-en_de.pdf?fileId=db3a304323b87bc20123ff97c57f5bee Description: SCR MODULE 1800V 1500A DO200AB
Packaging: Bulk
Package / Case: DO-200AB, B-PUK
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 14500A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 720 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (RMS)) (Max): 1500 A
Voltage - Off State: 1.8 kV
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
3+11322.04 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
DD220N16SHPSA1 DD220N16SHPSA1 Infineon Technologies Infineon-DD220N16S-DS-v03_01-EN.pdf?fileId=5546d462636cc8fb016390e96caf3f54 Description: DIODE MOD GP 1600V 273A BGPB34SB
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 273A
Supplier Device Package: BG-PB34SB-1
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.39 V @ 500 A
Current - Reverse Leakage @ Vr: 1 mA @ 1600 V
товару немає в наявності
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IPTG025N08NM5ATMA1 IPTG025N08NM5ATMA1 Infineon Technologies Infineon-IPTG025N08NM5-DataSheet-v02_00-EN.pdf?fileId=5546d46278d64ffd01791759b20e114d Description: TRENCH 40<-<100V PG-HSOG-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 184A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 150A 10V
Power Dissipation (Max): 3.8W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 108µA
Supplier Device Package: PG-HSOG-8-1
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 40 V
на замовлення 1780 шт:
термін постачання 21-31 дні (днів)
1+342.84 грн
10+218.43 грн
100+155.34 грн
500+137.12 грн
В кошику  од. на суму  грн.
IPTG017N12NM6ATMA1 IPTG017N12NM6ATMA1 Infineon Technologies Infineon-IPTG017N12NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8b6555fe018baf171f50114f Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 331A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 150A, 10V
Power Dissipation (Max): 3.8W (Ta), 395W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 275µA
Supplier Device Package: PG-HSOG-8-1
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 60 V
товару немає в наявності
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IPTG017N12NM6ATMA1 IPTG017N12NM6ATMA1 Infineon Technologies Infineon-IPTG017N12NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8b6555fe018baf171f50114f Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 331A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 150A, 10V
Power Dissipation (Max): 3.8W (Ta), 395W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 275µA
Supplier Device Package: PG-HSOG-8-1
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 60 V
на замовлення 1346 шт:
термін постачання 21-31 дні (днів)
1+632.25 грн
10+414.86 грн
100+305.10 грн
500+255.69 грн
В кошику  од. на суму  грн.
ISC130N20NM6ATMA1 ISC130N20NM6ATMA1 Infineon Technologies Infineon-ISC130N20NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8d2fe47b018d3286ef610f29 Description: MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta), 88A (Tc)
Rds On (Max) @ Id, Vgs: 11.7mOhm @ 50A, 15V
Power Dissipation (Max): 3W (Ta), 242W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 135µA
Supplier Device Package: PG-TSON-8-3
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 100 V
товару немає в наявності
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ISC130N20NM6ATMA1 ISC130N20NM6ATMA1 Infineon Technologies Infineon-ISC130N20NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8d2fe47b018d3286ef610f29 Description: MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta), 88A (Tc)
Rds On (Max) @ Id, Vgs: 11.7mOhm @ 50A, 15V
Power Dissipation (Max): 3W (Ta), 242W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 135µA
Supplier Device Package: PG-TSON-8-3
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 100 V
на замовлення 1115 шт:
термін постачання 21-31 дні (днів)
1+339.55 грн
10+286.21 грн
100+206.91 грн
500+194.08 грн
В кошику  од. на суму  грн.
CY90F546GPFR-GE1 CY90F546GPFR-GE1 Infineon Technologies Infineon-16-bit_Microcontroller_F2MC-16LX_MB90540G_545G_Series-AdditionalTechnicalInformation-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edc8f4d6071&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ Description: IC MCU 16BIT 256KB FLASH 100QFP
Packaging: Tray
Package / Case: 100-BQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-16LX
Data Converters: A/D 8x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: CANbus, EBI/EMI, SCI, Serial I/O, UART/USART
Peripherals: POR, WDT
Supplier Device Package: 100-QFP (14x20)
Number of I/O: 81
DigiKey Programmable: Not Verified
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KITXMC1300DCV1TOBO1 Infineon Technologies Board_Users_Manual_DriveCard_XMC1300_R1.0.pdf?fileId=db3a3043427ac3e201427f4a37de262b Description: KIT_XMC1300_DC_V1
Packaging: Bulk
Function: Motor Controller/Driver
Type: Power Management
Utilized IC / Part: XMC1300
Supplied Contents: Board(s)
Primary Attributes: Motors (BLDC)
Embedded: Yes, MCU
Contents: Board(s)
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
1+5604.70 грн
В кошику  од. на суму  грн.
FS450R17OE4BOSA1 FS450R17OE4BOSA1 Infineon Technologies Infineon-FS450R17OE4-DS-v03_00-en_de.pdf?fileId=db3a304336797ff90136c09b45906f3b Description: IGBT MOD 1700V 630A 2400W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 450A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 630 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 2400 W
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 36 nF @ 25 V
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
1+38194.53 грн
В кошику  од. на суму  грн.
SLB9673XU20FW2613XTMA1 SLB9673AU20FW2610XTMA1.pdf
SLB9673XU20FW2613XTMA1
Виробник: Infineon Technologies
Description: OPTIGA TPM SLB9673
Packaging: Cut Tape (CT)
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 1.95V, 3V ~ 3.6V
Controller Series: OPTIGA™ TPM
Program Memory Type: NVM (51kB)
Applications: Trusted Platform Module (TPM)
Core Processor: 32-Bit
Supplier Device Package: PG-UQFN-32-1
Number of I/O: 3
на замовлення 7932 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+306.67 грн
10+223.82 грн
25+206.04 грн
100+174.92 грн
250+166.15 грн
500+160.85 грн
1000+153.93 грн
2500+149.41 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
SLB9673AU20FW2613XTMA1 SLB9673AU20FW2610XTMA1.pdf
SLB9673AU20FW2613XTMA1
Виробник: Infineon Technologies
Description: OPTIGA TPM SLB9674
Packaging: Tape & Reel (TR)
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.65V ~ 1.95V, 3V ~ 3.6V
Controller Series: OPTIGA™ TPM
Program Memory Type: NVM (51kB)
Applications: Trusted Platform Module (TPM)
Core Processor: 32-Bit
Supplier Device Package: PG-UQFN-32-1
Number of I/O: 3
на замовлення 3975 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
SLB9673AU20FW2613XTMA1 SLB9673AU20FW2610XTMA1.pdf
SLB9673AU20FW2613XTMA1
Виробник: Infineon Technologies
Description: OPTIGA TPM SLB9674
Packaging: Cut Tape (CT)
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.65V ~ 1.95V, 3V ~ 3.6V
Controller Series: OPTIGA™ TPM
Program Memory Type: NVM (51kB)
Applications: Trusted Platform Module (TPM)
Core Processor: 32-Bit
Supplier Device Package: PG-UQFN-32-1
Number of I/O: 3
на замовлення 4519 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+367.51 грн
10+270.05 грн
25+249.04 грн
100+212.10 грн
250+201.79 грн
500+195.57 грн
1000+187.33 грн
2500+182.02 грн
В кошику  од. на суму  грн.
SLS32AIA010MMUSON10XTMA2 Infineon-OPTIGA%20TRUST%20M%20SLS32AIA-DataSheet-v03_40-EN.pdf?fileId=5546d4626c1f3dc3016c853c271a7e4a
SLS32AIA010MMUSON10XTMA2
Виробник: Infineon Technologies
Description: SECURITY ICS / AUTHENTICATION IC
Packaging: Tape & Reel (TR)
Package / Case: 10-UFDFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C
Operating Temperature: -25°C ~ 85°C (TA)
Voltage - Supply: 1.62V ~ 5.5V
Controller Series: OPTIGA™ Trust M
Program Memory Type: NVM (10kB)
Applications: Secure Element
Core Processor: 16-Bit
Supplier Device Package: PG-USON-10-2
товару немає в наявності
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SLS32AIA010MMUSON10XTMA2 Infineon-OPTIGA%20TRUST%20M%20SLS32AIA-DataSheet-v03_40-EN.pdf?fileId=5546d4626c1f3dc3016c853c271a7e4a
SLS32AIA010MMUSON10XTMA2
Виробник: Infineon Technologies
Description: SECURITY ICS / AUTHENTICATION IC
Packaging: Cut Tape (CT)
Package / Case: 10-UFDFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C
Operating Temperature: -25°C ~ 85°C (TA)
Voltage - Supply: 1.62V ~ 5.5V
Controller Series: OPTIGA™ Trust M
Program Memory Type: NVM (10kB)
Applications: Secure Element
Core Processor: 16-Bit
Supplier Device Package: PG-USON-10-2
на замовлення 47 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+134.84 грн
10+121.84 грн
25+118.38 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IRFH7921TRPBF description IRFH7921PBF.pdf
IRFH7921TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 15A/34A PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 34A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 15A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: PQFN (5x6) Single Die
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1210 pF @ 15 V
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7GA830178
Виробник: Infineon Technologies
Description: IC MCU 32BIT 144LQFP
Packaging: Tray
DigiKey Programmable: Not Verified
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FP15R12YT3BOMA1 Orderable_Part_Number_OPN_Translation_Table_Web.pdf
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 25A 110W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 15A
NTC Thermistor: Yes
Supplier Device Package: Module
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 110 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 1.1 nF @ 25 V
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CY8C4025AZI-S413 Infineon-PSoC_4_PSoC_4000S_Datasheet_Programmable_System-on-Chip_(PSoC_)-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eda97715cf1&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-file
CY8C4025AZI-S413
Виробник: Infineon Technologies
Description: IC MCU 32BIT 32KB FLASH 48TQFP
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 1x10b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 48-TQFP (7x7)
Number of I/O: 36
DigiKey Programmable: Not Verified
на замовлення 2412 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+195.68 грн
10+141.16 грн
25+129.43 грн
100+109.36 грн
250+103.59 грн
500+101.18 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IAUC120N06S5N015ATMA1 Infineon-IAUC120N06S5N015-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8fc2dd9c018fde5da2e2785f
IAUC120N06S5N015ATMA1
Виробник: Infineon Technologies
Description: MOSFET_)40V 60V)
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tj)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 60A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 94µA
Supplier Device Package: PG-TDSON-8-43
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6952 pF @ 30 V
Qualification: AEC-Q101
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IPP034N08N5XKSA1 Infineon-IPP034N08N5-DS-v02_00-EN.pdf?fileId=5546d4624ad04ef9014ade84c8b17b40
IPP034N08N5XKSA1
Виробник: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 100A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 108µA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6240 pF @ 40 V
на замовлення 500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+141.41 грн
50+85.20 грн
100+83.78 грн
500+76.42 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
TLF12505AUMA1
TLF12505AUMA1
Виробник: Infineon Technologies
Description: IC POWER STAGE PG-VIQFN-36
Packaging: Strip
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CY9AF111KPMC-GE1
CY9AF111KPMC-GE1
Виробник: Infineon Technologies
Description: MULTI-MARKET MCUS
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 96KB (96K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 8x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 48-LQFP (7x7)
Number of I/O: 36
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IR35210MTRPBF
IR35210MTRPBF
Виробник: Infineon Technologies
Description: IC CONTROLLER 40QFN
Packaging: Bulk
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 100°C (TJ)
Voltage - Supply: 4.75V ~ 7.5V
Applications: Multiphase Controller
Current - Supply: 10mA
Supplier Device Package: 32-MLPQ (5x5)
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
83+286.49 грн
Мінімальне замовлення: 83
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IRFZ46ZSTRLPBF infineon-irfz46z-datasheet-en.pdf
IRFZ46ZSTRLPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 51A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Rds On (Max) @ Id, Vgs: 13.6mOhm @ 31A, 10V
Power Dissipation (Max): 82W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1460 pF @ 25 V
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D2601NH90TXPSA1 Infineon-D2601NH-DS-v05_00-en_de.pdf?fileId=db3a304412b407950112b42fecdb4e58
D2601NH90TXPSA1
Виробник: Infineon Technologies
Description: DIODE GEN PURP 9KV 1790A
Packaging: Tray
Package / Case: DO-200AE
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1790A
Operating Temperature - Junction: 0°C ~ 140°C
Voltage - DC Reverse (Vr) (Max): 9000 V
Voltage - Forward (Vf) (Max) @ If: 5.5 V @ 4000 A
Current - Reverse Leakage @ Vr: 150 mA @ 9000 V
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CY7C66113C-LTXC CY7C66013%2C%2066113C.pdf
CY7C66113C-LTXC
Виробник: Infineon Technologies
Description: IC MCU 8K USB HUB 4PORT 56VQFN
Packaging: Tray
Package / Case: 56-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, USB, HAPI
RAM Size: 256 x 8
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4V ~ 5.25V
Controller Series: USB Hub
Program Memory Type: OTP (8kB)
Applications: USB Hub/Microcontroller
Core Processor: M8
Supplier Device Package: 56-QFN (8x8)
Number of I/O: 31
DigiKey Programmable: Not Verified
на замовлення 480 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
44+543.30 грн
Мінімальне замовлення: 44
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T731N44TOHXPSA1 Infineon-T731N-DataSheet-v07_00-EN.pdf?fileId=5546d4627112d9d501712b08e169404e
T731N44TOHXPSA1
Виробник: Infineon Technologies
Description: SCR MODULE 4.4KV 2010A TO-200AC
Packaging: Tray
Package / Case: TO-200AC
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 350 mA
Current - Gate Trigger (Igt) (Max): 350 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 18000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 1280 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (RMS)) (Max): 2010 A
Voltage - Off State: 4.4 kV
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T1401N42TOHXPSA1 Infineon-T1401N-DS-v06_00-en_de.pdf?fileId=db3a3043156fd5730115a390fbba08c8
T1401N42TOHXPSA1
Виробник: Infineon Technologies
Description: SCR MODULE 4.4KV 2500A TO-200AF
Packaging: Tray
Package / Case: TO-200AF
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 350 mA
Current - Gate Trigger (Igt) (Max): 350 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 40000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 2290 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (RMS)) (Max): 2500 A
Voltage - Off State: 4.4 kV
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T680N14TOFXPSA1
Виробник: Infineon Technologies
Description: SCR MODULE 1400V 1250A DO200AA
Packaging: Tray
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 11000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 681 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Current - On State (It (RMS)) (Max): 1250 A
Voltage - Off State: 1.4 kV
товару немає в наявності
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EVALPMG1S1DRPTOBO1 Infineon-CYPM13xx_EZ-PD_PMG1-S3_Power_delivery_MCU_Gen1-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7ddc01d7017ddd0263aa58f3
EVALPMG1S1DRPTOBO1
Виробник: Infineon Technologies
Description: EVALPMG1S1DRPTOBO1
Packaging: Box
Function: USB PD Controller (Power Delivery)
Type: Power Management
Utilized IC / Part: EZ-PD PMG1-S1
Supplied Contents: Board(s)
Embedded: Yes, MCU
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+10741.59 грн
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IPBE65R115CFD7AATMA1 Infineon-IPBE65R115CFD7A-DataSheet-v02_01-EN.pdf?fileId=5546d46270c4f93e0170f33391547c90
IPBE65R115CFD7AATMA1
Виробник: Infineon Technologies
Description: AUTOMOTIVE_COOLMOS PG-TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 115mOhm @ 9.7A, 10V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 490µA
Supplier Device Package: PG-TO263-7-11
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 400 V
Grade: Automotive
Qualification: AEC-Q101
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IPBE65R115CFD7AATMA1 Infineon-IPBE65R115CFD7A-DataSheet-v02_01-EN.pdf?fileId=5546d46270c4f93e0170f33391547c90
IPBE65R115CFD7AATMA1
Виробник: Infineon Technologies
Description: AUTOMOTIVE_COOLMOS PG-TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 115mOhm @ 9.7A, 10V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 490µA
Supplier Device Package: PG-TO263-7-11
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 400 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 971 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+372.44 грн
10+227.14 грн
100+170.65 грн
500+153.90 грн
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IRFB23N15DPBF irfs23n15dpbf.pdf?fileId=5546d462533600a4015356361eff2140
IRFB23N15DPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 150V 23A TO220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 14A, 10V
Power Dissipation (Max): 3.8W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
на замовлення 31931 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
337+62.88 грн
Мінімальне замовлення: 337
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S29GL064S80DHV020 Infineon-S29GL064S_64-MBIT_(8_MBYTE)_3.0_V_FLASH_MEMORY-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed12bd84d2d&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
S29GL064S80DHV020
Виробник: Infineon Technologies
Description: IC FLASH 64MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 80 ns
Memory Organization: 8M x 8, 4M x 16
DigiKey Programmable: Not Verified
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TLE4953CBAMA1 Infineon-TLE4953-DataSheet-v04_01-EN.pdf?fileId=db3a304319c6f18c011a2a95ec0b12d4
TLE4953CBAMA1
Виробник: Infineon Technologies
Description: MAG SWITCH SPEC PURP SSO-2-2
Packaging: Bulk
Package / Case: 2-SIP, SSO-2-2
Output Type: Current Source
Polarization: North Pole, South Pole
Mounting Type: Through Hole
Function: Special Purpose
Voltage - Supply: 4.5V ~ 20V
Technology: Hall Effect
Current - Supply (Max): 16.8mA
Supplier Device Package: PG-SSO-2-2
Grade: Automotive
Qualification: AEC-Q100
на замовлення 428 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
122+195.19 грн
Мінімальне замовлення: 122
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IRL3714ZSPBF description IRL3714Z%28S%2CL%29PbF.pdf
IRL3714ZSPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 20V 36A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 15A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 2.55V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 10 V
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IM241S6T2B2AKMA1
Виробник: Infineon Technologies
Description: CIPOS MICRO
Packaging: Tube
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CY62148ESL-55ZAXIT Infineon-CY62148ESL_MOBL_4_MBIT_(512K_X_8)_STATIC_RAM-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe70473204&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY62148ESL-55ZAXIT
Виробник: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 32STSOP
Packaging: Tape & Reel (TR)
Package / Case: 32-TFSOP (0.465", 11.80mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V, 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-sTSOP
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
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CY62148ESL-55ZAXIT Infineon-CY62148ESL_MOBL_4_MBIT_(512K_X_8)_STATIC_RAM-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe70473204&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY62148ESL-55ZAXIT
Виробник: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 32STSOP
Packaging: Cut Tape (CT)
Package / Case: 32-TFSOP (0.465", 11.80mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V, 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-sTSOP
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
на замовлення 1485 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+610.05 грн
10+540.98 грн
25+529.72 грн
50+495.40 грн
100+444.52 грн
250+431.08 грн
500+403.21 грн
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CY62148DV30LL-70ZSXA CY62148DV30.pdf
CY62148DV30LL-70ZSXA
Виробник: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 32TSOP II
Packaging: Tube
Package / Case: 32-SOIC (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-TSOP II
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
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CY62148G-45ZSXI Infineon-CY62148G_MoBL_4-Mbit_(512K_words_X_8_bit)_Static_RAM_With_Error-Correcting_Code_(ECC)-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed904c65aae&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_e
CY62148G-45ZSXI
Виробник: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 32TSOP II
Packaging: Tray
Package / Case: 32-SOIC (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-TSOP II
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
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CY62148ELL-45ZSXA Infineon-CY62148E_MoBL_4-Mbit_(512_K_8)_Static_RAM-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebeea5a32e0&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY62148ELL-45ZSXA
Виробник: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 32TSOP II
Packaging: Tray
Package / Case: 32-SOIC (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-TSOP II
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
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CY62148GN30-45SXIT Infineon-CY62148GN_MoBL_4-Mbit_(512_K_8)_Static_RAM-DataSheet-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed80b9e5996&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY62148GN30-45SXIT
Виробник: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 32TSOP II
Packaging: Tape & Reel (TR)
Package / Case: 32-SOIC (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-TSOP II
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
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CY62148GN30-45ZSXIT Infineon-CY62148GN_MoBL_4-Mbit_(512_K_8)_Static_RAM-DataSheet-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed80b9e5996&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY62148GN30-45ZSXIT
Виробник: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 32TSOP II
Packaging: Tape & Reel (TR)
Package / Case: 32-SOIC (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-TSOP II
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
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CY62148GN30-45SXI Infineon-CY62148GN_MoBL_4-Mbit_(512_K_8)_Static_RAM-DataSheet-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed80b9e5996&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY62148GN30-45SXI
Виробник: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 32TSOP II
Packaging: Tube
Package / Case: 32-SOIC (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-TSOP II
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
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DF100R07W1H5FPB54BPSA2 Infineon-DF100R07W1H5FP_B54-DS-v03_00-EN.pdf?fileId=5546d4625b3ca4ec015b5761855903ab
DF100R07W1H5FPB54BPSA2
Виробник: Infineon Technologies
Description: IGBT MODULE 650V 40A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.55V @ 15V, 25A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Cutoff (Max): 40 µA
Input Capacitance (Cies) @ Vce: 2.8 nF @ 25 V
на замовлення 67 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
9+2252.55 грн
Мінімальне замовлення: 9
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FP40R12KT3GBOSA1 Infineon-FP40R12KT3G-DS-v02_01-en_de.pdf?fileId=db3a304412b407950112b4316e585446
FP40R12KT3GBOSA1
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 55A 210W MOD
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 401A
NTC Thermistor: Yes
Supplier Device Package: Module
Current - Collector (Ic) (Max): 55 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 210 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 2.5 nF @ 25 V
на замовлення 203 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+6709.69 грн
Мінімальне замовлення: 3
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IRGP4750D-EPBF IRGP4750D%28-E%29PbF.pdf
IRGP4750D-EPBF
Виробник: Infineon Technologies
Description: IGBT 650V 70A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 150 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 35A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 50ns/105ns
Switching Energy: 1.3mJ (on), 500µJ (off)
Test Condition: 400V, 35A, 10Ohm, 15V
Gate Charge: 105 nC
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 105 A
Power - Max: 273 W
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IRGP4750DPBF IRGP4750D%28-E%29PbF.pdf
IRGP4750DPBF
Виробник: Infineon Technologies
Description: IGBT 650V 70A TO-247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 150 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 35A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 50ns/105ns
Switching Energy: 1.3mJ (on), 500µJ (off)
Test Condition: 400V, 35A, 10Ohm, 15V
Gate Charge: 105 nC
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 105 A
Power - Max: 273 W
товару немає в наявності
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IPT60T065S7XTMA1 Infineon-IPT60T065S7-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c8afe5bd0018b4c5977be7aee
IPT60T065S7XTMA1
Виробник: Infineon Technologies
Description: HIGH POWER_NEW
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 8A, 12V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 470µA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 1932 pF @ 300 V
товару немає в наявності
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IPT60T065S7XTMA1 Infineon-IPT60T065S7-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c8afe5bd0018b4c5977be7aee
IPT60T065S7XTMA1
Виробник: Infineon Technologies
Description: HIGH POWER_NEW
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 8A, 12V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 470µA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 1932 pF @ 300 V
на замовлення 1930 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+465.35 грн
10+300.22 грн
100+216.48 грн
500+169.68 грн
1000+169.56 грн
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IPF129N20NM6ATMA1 Infineon-IPF129N20NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8d2fe47b018d326b6ae00c86
IPF129N20NM6ATMA1
Виробник: Infineon Technologies
Description: IPF129N20NM6ATMA1
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 87A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 65A, 15V
Power Dissipation (Max): 3.8W (Ta), 234W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 129µA
Supplier Device Package: PG-TO263-7-3
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 100 V
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IPF129N20NM6ATMA1 Infineon-IPF129N20NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8d2fe47b018d326b6ae00c86
IPF129N20NM6ATMA1
Виробник: Infineon Technologies
Description: IPF129N20NM6ATMA1
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 87A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 65A, 15V
Power Dissipation (Max): 3.8W (Ta), 234W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 129µA
Supplier Device Package: PG-TO263-7-3
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 100 V
на замовлення 797 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+446.44 грн
10+287.71 грн
100+207.11 грн
500+162.11 грн
В кошику  од. на суму  грн.
CY62148ELL-45SXI Infineon-CY62148E_MoBL_4-Mbit_(512_K_8)_Static_RAM-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebeea5a32e0&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY62148ELL-45SXI
Виробник: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 32SOIC
Packaging: Tube
Package / Case: 32-SOIC (0.445", 11.30mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-SOIC
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
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DD560N45KHPSA1
Виробник: Infineon Technologies
Description: THYR / DIODE MODULE DK
Packaging: Tray
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TD210N16KOFHPSA1 Infineon-TT210N-DS-v03_01-en_de.pdf?fileId=db3a304412b407950112b42f79f24bbd
TD210N16KOFHPSA1
Виробник: Infineon Technologies
Description: SCR MODULE 1800V 410A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 6600A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 261 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 410 A
Voltage - Off State: 1.8 kV
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+11864.26 грн
Мінімальне замовлення: 2
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DD710N16KS20HPSA1
Виробник: Infineon Technologies
Description: THYR / DIODE MODULE DK
Packaging: Tray
товару немає в наявності
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T2810N16TOFVTXPSA1 Infineon-T2810N-DataSheet-v03_01-EN.pdf?fileId=5546d4627112d9d501712b08c44a4042
T2810N16TOFVTXPSA1
Виробник: Infineon Technologies
Description: SCR MODULE 2200V 5800A DO200AE
Packaging: Tray
Package / Case: DO-200AE
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 58000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 2810 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (RMS)) (Max): 5800 A
Voltage - Off State: 2.2 kV
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TD120N16SOFHPSA1 Infineon-TT120N-DS-v03_04-EN.pdf?fileId=5546d46148a8bbb90148d04e762d2e47
TD120N16SOFHPSA1
Виробник: Infineon Technologies
Description: THYRISTOR MODULE 1600V 120A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 130°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 250 mA
Current - Gate Trigger (Igt) (Max): 100 mA
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 119 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (RMS)) (Max): 190 A
Voltage - Off State: 1.6 kV
на замовлення 101 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2528.98 грн
12+1756.62 грн
36+1567.42 грн
84+1464.33 грн
В кошику  од. на суму  грн.
T720N16TOFXPSA1 Infineon-T720N-DS-v01_00-en_de.pdf?fileId=db3a304323b87bc20123ff97c57f5bee
T720N16TOFXPSA1
Виробник: Infineon Technologies
Description: SCR MODULE 1800V 1500A DO200AB
Packaging: Bulk
Package / Case: DO-200AB, B-PUK
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 14500A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 720 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (RMS)) (Max): 1500 A
Voltage - Off State: 1.8 kV
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+11322.04 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
DD220N16SHPSA1 Infineon-DD220N16S-DS-v03_01-EN.pdf?fileId=5546d462636cc8fb016390e96caf3f54
DD220N16SHPSA1
Виробник: Infineon Technologies
Description: DIODE MOD GP 1600V 273A BGPB34SB
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 273A
Supplier Device Package: BG-PB34SB-1
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.39 V @ 500 A
Current - Reverse Leakage @ Vr: 1 mA @ 1600 V
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IPTG025N08NM5ATMA1 Infineon-IPTG025N08NM5-DataSheet-v02_00-EN.pdf?fileId=5546d46278d64ffd01791759b20e114d
IPTG025N08NM5ATMA1
Виробник: Infineon Technologies
Description: TRENCH 40<-<100V PG-HSOG-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 184A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 150A 10V
Power Dissipation (Max): 3.8W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 108µA
Supplier Device Package: PG-HSOG-8-1
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 40 V
на замовлення 1780 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+342.84 грн
10+218.43 грн
100+155.34 грн
500+137.12 грн
В кошику  од. на суму  грн.
IPTG017N12NM6ATMA1 Infineon-IPTG017N12NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8b6555fe018baf171f50114f
IPTG017N12NM6ATMA1
Виробник: Infineon Technologies
Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 331A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 150A, 10V
Power Dissipation (Max): 3.8W (Ta), 395W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 275µA
Supplier Device Package: PG-HSOG-8-1
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 60 V
товару немає в наявності
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IPTG017N12NM6ATMA1 Infineon-IPTG017N12NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8b6555fe018baf171f50114f
IPTG017N12NM6ATMA1
Виробник: Infineon Technologies
Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 331A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 150A, 10V
Power Dissipation (Max): 3.8W (Ta), 395W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 275µA
Supplier Device Package: PG-HSOG-8-1
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 60 V
на замовлення 1346 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+632.25 грн
10+414.86 грн
100+305.10 грн
500+255.69 грн
В кошику  од. на суму  грн.
ISC130N20NM6ATMA1 Infineon-ISC130N20NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8d2fe47b018d3286ef610f29
ISC130N20NM6ATMA1
Виробник: Infineon Technologies
Description: MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta), 88A (Tc)
Rds On (Max) @ Id, Vgs: 11.7mOhm @ 50A, 15V
Power Dissipation (Max): 3W (Ta), 242W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 135µA
Supplier Device Package: PG-TSON-8-3
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 100 V
товару немає в наявності
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ISC130N20NM6ATMA1 Infineon-ISC130N20NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8d2fe47b018d3286ef610f29
ISC130N20NM6ATMA1
Виробник: Infineon Technologies
Description: MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta), 88A (Tc)
Rds On (Max) @ Id, Vgs: 11.7mOhm @ 50A, 15V
Power Dissipation (Max): 3W (Ta), 242W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 135µA
Supplier Device Package: PG-TSON-8-3
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 100 V
на замовлення 1115 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+339.55 грн
10+286.21 грн
100+206.91 грн
500+194.08 грн
В кошику  од. на суму  грн.
CY90F546GPFR-GE1 Infineon-16-bit_Microcontroller_F2MC-16LX_MB90540G_545G_Series-AdditionalTechnicalInformation-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edc8f4d6071&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ
CY90F546GPFR-GE1
Виробник: Infineon Technologies
Description: IC MCU 16BIT 256KB FLASH 100QFP
Packaging: Tray
Package / Case: 100-BQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-16LX
Data Converters: A/D 8x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: CANbus, EBI/EMI, SCI, Serial I/O, UART/USART
Peripherals: POR, WDT
Supplier Device Package: 100-QFP (14x20)
Number of I/O: 81
DigiKey Programmable: Not Verified
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KITXMC1300DCV1TOBO1 Board_Users_Manual_DriveCard_XMC1300_R1.0.pdf?fileId=db3a3043427ac3e201427f4a37de262b
Виробник: Infineon Technologies
Description: KIT_XMC1300_DC_V1
Packaging: Bulk
Function: Motor Controller/Driver
Type: Power Management
Utilized IC / Part: XMC1300
Supplied Contents: Board(s)
Primary Attributes: Motors (BLDC)
Embedded: Yes, MCU
Contents: Board(s)
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+5604.70 грн
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FS450R17OE4BOSA1 Infineon-FS450R17OE4-DS-v03_00-en_de.pdf?fileId=db3a304336797ff90136c09b45906f3b
FS450R17OE4BOSA1
Виробник: Infineon Technologies
Description: IGBT MOD 1700V 630A 2400W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 450A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 630 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 2400 W
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 36 nF @ 25 V
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+38194.53 грн
В кошику  од. на суму  грн.
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