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CY7C64215-56LFXC CY7C64215-56LFXC Infineon Technologies CY7C64215.pdf Description: IC CNTRLR USB FS 56VQFN
Packaging: Tray
Package / Case: 56-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, USB
RAM Size: 1K x 8
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 5.25V
Controller Series: CY7C642xx
Program Memory Type: FLASH (16kB)
Applications: USB Microcontroller
Core Processor: M8C
Supplier Device Package: 56-QFN (8x8)
Number of I/O: 50
DigiKey Programmable: Not Verified
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FZ3600R17HE4HOSA2 FZ3600R17HE4HOSA2 Infineon Technologies Infineon-FZ3600R17HE4-DS-v02_05-EN.pdf?fileId=db3a30433e4143bd013e470701954203 Description: IGBT MODULE 1700V 7200A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 3600A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 7200 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 21000 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 295 nF @ 25 V
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FZ3600R17HE4PHPSA1 FZ3600R17HE4PHPSA1 Infineon Technologies Infineon-FZ3600R17HE4P-DS-v03_00-EN.pdf?fileId=5546d462576f34750157dd48123d2822 Description: IGBT MODULE 1700V 7200A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 3600A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 7200 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 295 nF @ 25 V
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
1+97055.50 грн
В кошику  од. на суму  грн.
IPS65R1K0CEAKMA1 IPS65R1K0CEAKMA1 Infineon Technologies Infineon-IPS65R1K0CE-DS-v02_00-EN.pdf?fileId=5546d46249be182c0149c7a3c90c1e8a Description: MOSFET N-CH 650V 4.3A TO251
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 1.5A, 10V
Power Dissipation (Max): 37W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 200µA
Supplier Device Package: TO-251
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 328 pF @ 100 V
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CY8C20536A-24PVXI CY8C20536A-24PVXI Infineon Technologies Infineon-CY8C20XX6A_S_1.8_V_Programmable_CapSense_Controller_with_SmartSense_Auto-tuning_1-33_Buttons_0-6_Sliders-DataSheet-v26_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecc6dc04671&utm_source=cypress&utm_medium=referral&utm_camp Description: IC MCU 8K FLASH 1K SRAM 48SSOP
Packaging: Tube
Package / Case: 48-BSSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Interface: I2C, SPI
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Controller Series: CY8C20xx6A
Program Memory Type: FLASH (8kB)
Applications: Capacitive Sensing
Core Processor: M8C
Supplier Device Package: 48-SSOP
Number of I/O: 36
DigiKey Programmable: Not Verified
на замовлення 363 шт:
термін постачання 21-31 дні (днів)
1+463.92 грн
10+400.93 грн
25+379.01 грн
100+308.27 грн
250+292.46 грн
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CY95F633KNPMC-G-UNCGE2 CY95F633KNPMC-G-UNCGE2 Infineon Technologies Infineon-CY95630H_Series_New_8FX_8-bit_Microcontrollers-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edd859f61fe Description: IC MCU 8BIT 12KB FLASH 32LQFP
Packaging: Tray
Package / Case: 32-LQFP
Mounting Type: Surface Mount
Speed: 16.25MHz
Program Memory Size: 12KB (12K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 8x8/10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V
Connectivity: I2C, LINbus, SIO, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 32-LQFP (7x7)
Number of I/O: 25
DigiKey Programmable: Not Verified
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2+193.89 грн
10+167.73 грн
25+158.59 грн
80+128.98 грн
250+122.37 грн
500+109.80 грн
1000+91.08 грн
2500+86.53 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
CY95F634HNPMC-G-UNE2 CY95F634HNPMC-G-UNE2 Infineon Technologies Infineon-CY95630H_Series_New_8FX_8-bit_Microcontrollers-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edd859f61fe Description: IC MM MCU 32LQFP
Packaging: Tray
Package / Case: 32-LQFP
Mounting Type: Surface Mount
Speed: 16.25MHz
Program Memory Size: 20KB (20K x 8)
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 8x8/10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V
Connectivity: I2C, LINbus, SIO, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 32-LQFP (7x7)
Number of I/O: 28
DigiKey Programmable: Not Verified
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2+232.35 грн
10+201.30 грн
25+190.31 грн
80+154.78 грн
250+146.84 грн
500+131.76 грн
1000+109.30 грн
2500+103.84 грн
Мінімальне замовлення: 2
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CY9BF406RAPMC-G-UNE1 CY9BF406RAPMC-G-UNE1 Infineon Technologies download Description: IC MCU 32BIT 512KB FLASH 120LQFP
Packaging: Tray
Package / Case: 120-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 16x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 120-LQFP (16x16)
Number of I/O: 100
DigiKey Programmable: Not Verified
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CY9AF116MAPMC-GNCGE2 CY9AF116MAPMC-GNCGE2 Infineon Technologies Infineon-CY9A110A_Series_32_Bit_ARM_(R)_Cortex_(R)-M3_FM3_Microcontroller-DataSheet-v07_00-CN.pdf?fileId=8ac78c8c7d0d8da4017d0eddeb686295 Description: IC MCU 32BIT 512KB FLASH 80LQFP
Packaging: Tray
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 12x12b SAR
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 80-LQFP (12x12)
Number of I/O: 66
DigiKey Programmable: Not Verified
на замовлення 1190 шт:
термін постачання 21-31 дні (днів)
1+534.57 грн
10+398.59 грн
25+369.36 грн
119+313.55 грн
357+297.56 грн
595+291.65 грн
1071+281.13 грн
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CYT3DLABHBQ1AESGS CYT3DLABHBQ1AESGS Infineon Technologies Infineon-CYT3DL_TRAVEO_TM_T2G_32-BIT_AUTOMOTIVE_MCU_BASED_ON_ARM_R_CORTEX_R_-M7_SINGLE-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c869190210186f0ccf72f3fd3 Description: IC MCU 32BT 4.063MB FLSH 216TQFP
Packaging: Tray
Package / Case: 216-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 240MHz
Program Memory Size: 4.063MB (4.063M x 8)
RAM Size: 384K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: DMA, I2S, LVD, Temp Sensor, WDT
Peripherals: DMA, I2S, LVD, WDT
Supplier Device Package: 216-TEQFP (24x24)
Number of I/O: 108
DigiKey Programmable: Not Verified
на замовлення 400 шт:
термін постачання 21-31 дні (днів)
1+2559.79 грн
10+2005.48 грн
40+1842.33 грн
120+1643.60 грн
280+1593.59 грн
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KIT1EDBAUXGANTOBO1 KIT1EDBAUXGANTOBO1 Infineon Technologies Description: EVAL BOARD FOR 1EDB8275F
Packaging: Bulk
Function: Gate Driver
Type: Power Management
Utilized IC / Part: 1EDB8275F, 1EDN7511B
Supplied Contents: Board(s)
Primary Attributes: Isolated
Embedded: No
Contents: Board(s)
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
1+10355.35 грн
В кошику  од. на суму  грн.
IMW65R015M2HXKSA1 IMW65R015M2HXKSA1 Infineon Technologies Infineon-IMW65R015M2H-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018dd63bb7ba52e8 Description: SILICON CARBIDE MOSFET
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 93A (Tc)
Rds On (Max) @ Id, Vgs: 13.2mOhm @ 64.2A, 20V
Power Dissipation (Max): 341W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 13mA
Supplier Device Package: PG-TO247-3-40
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2792 pF @ 400 V
на замовлення 228 шт:
термін постачання 21-31 дні (днів)
1+1436.50 грн
30+908.79 грн
120+847.31 грн
В кошику  од. на суму  грн.
IMW65R007M2HXKSA1 IMW65R007M2HXKSA1 Infineon Technologies IMW65R007M2H.pdf Description: SILICON CARBIDE MOSFET
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 171A (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 146.3A, 20V
Power Dissipation (Max): 625W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 29.7mA
Supplier Device Package: PG-TO247-3-U06
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 179 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 6359 pF @ 400 V
на замовлення 79 шт:
термін постачання 21-31 дні (днів)
1+2257.58 грн
30+1605.30 грн
В кошику  од. на суму  грн.
IRGS4615DPBF IRGS4615DPBF Infineon Technologies IRGx4615DPbF.pdf Description: IGBT 600V 23A 99W D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 60 ns
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 8A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 30ns/95ns
Switching Energy: 70µJ (on), 145µJ (off)
Test Condition: 400V, 8A, 47Ohm, 15V
Gate Charge: 19 nC
Current - Collector (Ic) (Max): 23 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 99 W
на замовлення 350 шт:
термін постачання 21-31 дні (днів)
237+92.66 грн
Мінімальне замовлення: 237
В кошику  од. на суму  грн.
IRGS4615DPBF IRGS4615DPBF Infineon Technologies IRGx4615DPbF.pdf Description: IGBT 600V 23A 99W D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 60 ns
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 8A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 30ns/95ns
Switching Energy: 70µJ (on), 145µJ (off)
Test Condition: 400V, 8A, 47Ohm, 15V
Gate Charge: 19 nC
Current - Collector (Ic) (Max): 23 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 99 W
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IRGSL4B60KD1PBF IRGSL4B60KD1PBF Infineon Technologies fundamentals-of-power-semiconductors Description: IGBT NPT 600V 11A TO-262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 93 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 4A
Supplier Device Package: TO-262
IGBT Type: NPT
Td (on/off) @ 25°C: 22ns/100ns
Switching Energy: 73µJ (on), 47µJ (off)
Test Condition: 400V, 4A, 100Ohm, 15V
Gate Charge: 12 nC
Current - Collector (Ic) (Max): 11 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 22 A
Power - Max: 63 W
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S25FL128SAGNFV011 S25FL128SAGNFV011 Infineon Technologies Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17 Description: IC FLASH 128MBIT SPI/QUAD 8WSON
Packaging: Tube
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Memory Interface: SPI - Quad I/O
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
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BAR 67-02V E6327 BAR 67-02V E6327 Infineon Technologies fundamentals-of-power-semiconductors Description: RF DIODE PIN 150V 250MW SC79-2
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.55pF @ 5V, 1MHz
Resistance @ If, F: 1Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 150V
Supplier Device Package: PG-SC79-2
Current - Max: 200 mA
Power Dissipation (Max): 250 mW
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CY8CKIT-062S2-AI CY8CKIT-062S2-AI Infineon Technologies Infineon-CY8CKIT-062S2-AI_Product_Brief-ProductBrief-v01_00-EN.pdf?fileId=8ac78c8c8e7ead30018ee43d7df20372 Description: PSOC 6 AI EVAL BOARD
Packaging: Box
For Use With/Related Products: BGT60TR13C
Sensitivity: 60GHz
Frequency: 60GHz
Interface: RF
Type: Transceiver; RADAR
Contents: Board(s)
Sensor Type: Accelerometer, Gyroscope, Magnetometer, Microphone, Pressure, Radar
Utilized IC / Part: BGT60, BMI270, BMM350, DPS368, IM72D128
Supplied Contents: Board(s)
Embedded: Yes, MCU, 32-Bit
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
1+2674.40 грн
В кошику  од. на суму  грн.
FS1150R08A8P3LMCHPSA1 FS1150R08A8P3LMCHPSA1 Infineon Technologies Infineon-FS1150R08A8P3LMC-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f15854bae0098 Description: FS1150R08A8P3LMCHPSA1
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.21V @ 15V, 600A
NTC Thermistor: No
Current - Collector (Ic) (Max): 1.15 kA
Voltage - Collector Emitter Breakdown (Max): 750 V
Power - Max: 1 kW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 60800 pF @ 50 V
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FS1150R08A8P3LBCHPSA1 FS1150R08A8P3LBCHPSA1 Infineon Technologies Infineon-FS1150R08A8P3LBC-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f157c21bb0095 Description: FS1150R08A8P3LBCHPSA1
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.21V @ 15V, 600A
NTC Thermistor: No
Current - Collector (Ic) (Max): 1.15 kA
Voltage - Collector Emitter Breakdown (Max): 750 V
Power - Max: 1 kW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 60800 pF @ 50 V
на замовлення 85 шт:
термін постачання 21-31 дні (днів)
1+31867.50 грн
В кошику  од. на суму  грн.
KP467XTMA1 KP467XTMA1 Infineon Technologies KP467.pdf Description: MEMS GROWTH
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads, Exposed Pad
Output Type: SPI
Mounting Type: Surface Mount
Output: 14 b
Operating Pressure: 6.52PSI ~ 29.01PSI (45kPa ~ 200kPa)
Pressure Type: Absolute
Accuracy: ±0.435PSI (±3kPa)
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 3V ~ 5.25V
Applications: Industrial Automation, Medical Ventilation
Supplier Device Package: PG-DFN-8-1
Port Style: No Port
Maximum Pressure: 87.02PSI (600kPa)
Grade: Automotive
Qualification: AEC-Q103-002
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KP467XTMA1 KP467XTMA1 Infineon Technologies KP467.pdf Description: MEMS GROWTH
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads, Exposed Pad
Output Type: SPI
Mounting Type: Surface Mount
Output: 14 b
Operating Pressure: 6.52PSI ~ 29.01PSI (45kPa ~ 200kPa)
Pressure Type: Absolute
Accuracy: ±0.435PSI (±3kPa)
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 3V ~ 5.25V
Applications: Industrial Automation, Medical Ventilation
Supplier Device Package: PG-DFN-8-1
Port Style: No Port
Maximum Pressure: 87.02PSI (600kPa)
Grade: Automotive
Qualification: AEC-Q103-002
на замовлення 1296 шт:
термін постачання 21-31 дні (днів)
2+218.22 грн
5+187.46 грн
10+179.07 грн
25+158.65 грн
50+152.25 грн
100+146.39 грн
500+132.40 грн
1000+128.17 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
AIMZH120R020M1TXKSA1 AIMZH120R020M1TXKSA1 Infineon Technologies Infineon-AIMZH120R020M1T-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8c3de074018c68ea06f24a7c Description: SIC_DISCRETE
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 43A, 20V
Power Dissipation (Max): 429W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 13.7mA
Supplier Device Package: PG-TO247-4-11
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2667 pF @ 800 V
Qualification: AEC-Q101
на замовлення 144 шт:
термін постачання 21-31 дні (днів)
1+1705.74 грн
30+1051.56 грн
120+983.06 грн
В кошику  од. на суму  грн.
CY7C1041CV33-10BAJXE CY7C1041CV33-10BAJXE Infineon Technologies Infineon-CY7C1041CV33_Automotive_4-Mbit_(256_K_16)_Static_RAM-AdditionalTechnicalInformation-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecab2cc43b0&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integr Description: IC SRAM 4MBIT PARALLEL 48FBGA
Packaging: Tray
Package / Case: 48-TFBGA
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-FBGA (7x8.5)
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
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CY7C1041BN-20ZSXA CY7C1041BN-20ZSXA Infineon Technologies download Description: IC SRAM 4MBIT PARALLEL 44TSOP II
Packaging: Tray
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 20ns
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
CY7C1041CV33-15VC CY7C1041CV33-15VC Infineon Technologies CY7C1041CV33%20RevH.pdf Description: IC SRAM 4MBIT PARALLEL 44SOJ
Packaging: Tube
Package / Case: 44-BSOJ (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-SOJ
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
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CY3261-RGB Infineon Technologies Description: KIT DEMO PSOC RGB LIGHT
Features: Dimmable
Packaging: Bulk
Voltage - Input: 6V
Utilized IC / Part: CY8C27443
Supplied Contents: Board(s), Power Supply
Outputs and Type: 3, Non-Isolated
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CY7C64345-32LQXC CY7C64345-32LQXC Infineon Technologies download Description: IC MCU USB ENCORE CONTROL 32QFN
Packaging: Tray
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI, USB
RAM Size: 1K x 8
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 5.5V
Controller Series: CY7C643xx
Program Memory Type: FLASH (16kB)
Applications: USB Microcontroller
Core Processor: M8C
Supplier Device Package: 32-QFN (5x5)
Number of I/O: 25
DigiKey Programmable: Not Verified
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CY7C64345-32LQXCT CY7C64345-32LQXCT Infineon Technologies download Description: IC MCU USB ENCORE CONTROL 32QFN
Packaging: Tape & Reel (TR)
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI, USB
RAM Size: 1K x 8
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 5.5V
Controller Series: CY7C643xx
Program Memory Type: FLASH (16kB)
Applications: USB Microcontroller
Core Processor: M8C
Supplier Device Package: 32-QFN (5x5)
Number of I/O: 25
DigiKey Programmable: Not Verified
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CY7C64343-32LQXCT CY7C64343-32LQXCT Infineon Technologies download Description: IC MCU USB ENCORE CONTROL 32QFN
Packaging: Tape & Reel (TR)
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI, USB
RAM Size: 1K x 8
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 5.5V
Controller Series: CY7C643xx
Program Memory Type: FLASH (8kB)
Applications: USB Microcontroller
Core Processor: M8C
Supplier Device Package: 32-QFN (5x5)
Number of I/O: 25
DigiKey Programmable: Not Verified
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S29PL127J60TFID30H S29PL127J60TFID30H Infineon Technologies Description: IC FLASH 128MBIT PARALLEL 56TSOP
Packaging: Tray
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 60 ns
Memory Organization: 8M x 16
DigiKey Programmable: Not Verified
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IPDD60R037CM8XTMA1 IPDD60R037CM8XTMA1 Infineon Technologies Infineon-IPDD60R037CM8-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c8d2fe47b018d8d1df1830479 Description: IPDD60R037CM8XTMA1
Packaging: Tape & Reel (TR)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 72A (Tj)
Rds On (Max) @ Id, Vgs: 37mOhm @ 27A, 10V
Power Dissipation (Max): 416W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 680µA
Supplier Device Package: PG-HDSOP-10-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3458 pF @ 400 V
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IPDD60R037CM8XTMA1 IPDD60R037CM8XTMA1 Infineon Technologies Infineon-IPDD60R037CM8-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c8d2fe47b018d8d1df1830479 Description: IPDD60R037CM8XTMA1
Packaging: Cut Tape (CT)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 72A (Tj)
Rds On (Max) @ Id, Vgs: 37mOhm @ 27A, 10V
Power Dissipation (Max): 416W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 680µA
Supplier Device Package: PG-HDSOP-10-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3458 pF @ 400 V
на замовлення 184 шт:
термін постачання 21-31 дні (днів)
1+442.72 грн
10+343.86 грн
100+278.10 грн
В кошику  од. на суму  грн.
IPDD60R180CM8XTMA1 IPDD60R180CM8XTMA1 Infineon Technologies Description: IPDD60R180CM8XTMA1
Packaging: Tape & Reel (TR)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tj)
Rds On (Max) @ Id, Vgs: 180mOhm @ 5.6A, 10V
Power Dissipation (Max): 169W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 140µA
Supplier Device Package: PG-HDSOP-10-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 743 pF @ 400 V
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IPDD60R180CM8XTMA1 IPDD60R180CM8XTMA1 Infineon Technologies Description: IPDD60R180CM8XTMA1
Packaging: Cut Tape (CT)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tj)
Rds On (Max) @ Id, Vgs: 180mOhm @ 5.6A, 10V
Power Dissipation (Max): 169W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 140µA
Supplier Device Package: PG-HDSOP-10-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 743 pF @ 400 V
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ISZ520N20NM6ATMA1 ISZ520N20NM6ATMA1 Infineon Technologies Infineon-ISZ520N20NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8d2fe47b018d3286fe540f2f Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 26A (Tc)
Rds On (Max) @ Id, Vgs: 47.8mOhm @ 15A, 15V
Power Dissipation (Max): 2.5W (Ta), 88W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 31µA
Supplier Device Package: PG-TSDSON-8-34
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 14.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 960 pF @ 100 V
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ISZ520N20NM6ATMA1 ISZ520N20NM6ATMA1 Infineon Technologies Infineon-ISZ520N20NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8d2fe47b018d3286fe540f2f Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 26A (Tc)
Rds On (Max) @ Id, Vgs: 47.8mOhm @ 15A, 15V
Power Dissipation (Max): 2.5W (Ta), 88W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 31µA
Supplier Device Package: PG-TSDSON-8-34
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 14.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 960 pF @ 100 V
на замовлення 3535 шт:
термін постачання 21-31 дні (днів)
3+137.37 грн
10+94.26 грн
100+71.18 грн
500+56.38 грн
1000+56.06 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
XC836MT2FRAABLXUMA1 Infineon Technologies Orderable_Part_Number_OPN_Translation_Table_Web.pdf Description: IC MCU 8BIT 8KB FLASH 28TSSOP
Packaging: Bulk
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: XC800
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.5V ~ 5.5V
Connectivity: I2C, SSC, UART/USART
Peripherals: Brown-out Detect/Reset, LED, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-28-1
Number of I/O: 25
DigiKey Programmable: Not Verified
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LTA2102XUMA1 Infineon Technologies Description: DIGITAL CHARGER/ADAPTER
Packaging: Tape & Reel (TR)
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CYPD727268LQXQTXUMA1 Infineon Technologies Description: CHARGER_ADAPTER
Packaging: Tape & Reel (TR)
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IQDH88N06LM5CGATMA1 IQDH88N06LM5CGATMA1 Infineon Technologies Infineon-IQDH88N06LM5CG-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c88ae21230188b39789f50841 Description: TRENCH 40<-<100V
Packaging: Tape & Reel (TR)
Package / Case: 9-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 447A (Tc)
Rds On (Max) @ Id, Vgs: 0.86mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 163µA
Supplier Device Package: PG-TTFN-9-U02
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 30 V
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IQDH88N06LM5CGATMA1 IQDH88N06LM5CGATMA1 Infineon Technologies Infineon-IQDH88N06LM5CG-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c88ae21230188b39789f50841 Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
Package / Case: 9-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 447A (Tc)
Rds On (Max) @ Id, Vgs: 0.86mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 163µA
Supplier Device Package: PG-TTFN-9-U02
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 30 V
на замовлення 3863 шт:
термін постачання 21-31 дні (днів)
2+272.39 грн
10+198.27 грн
25+182.23 грн
100+154.47 грн
250+150.16 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
CY62167ELL-45ZXI CY62167ELL-45ZXI Infineon Technologies Infineon-CY62167E_16-Mbit_(1_M_16_2_M_8)_Static_RAM-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebed5b432bc&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC SRAM 16MBIT PARALLEL 48TSOP I
Packaging: Tray
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-TSOP I
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 2M x 8, 1M x 16
DigiKey Programmable: Not Verified
на замовлення 239 шт:
термін постачання 21-31 дні (днів)
1+1170.39 грн
10+1000.89 грн
25+954.55 грн
40+874.24 грн
96+835.40 грн
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CY62167ELL-45ZXIT CY62167ELL-45ZXIT Infineon Technologies Infineon-CY62167E_16-Mbit_(1_M_16_2_M_8)_Static_RAM-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebed5b432bc&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC SRAM 16MBIT PARALLEL 48TSOP I
Packaging: Cut Tape (CT)
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-TSOP I
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 2M x 8, 1M x 16
DigiKey Programmable: Not Verified
на замовлення 2993 шт:
термін постачання 21-31 дні (днів)
1+1170.39 грн
10+1000.89 грн
25+954.55 грн
50+864.18 грн
100+833.63 грн
250+794.81 грн
500+754.03 грн
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CY62167G-45BVXIT CY62167G-45BVXIT Infineon Technologies Infineon-CY62167G_CY62167GE_MOBL_16_MBIT_(1M_WORDS_X_16_BIT_2M_WORDS_X_8_BIT)_STATIC_RAM_WITH_ERROR-CORRECTING_CODE_(ECC)-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eccbe004700&utm_source=cypress&utm_medium=referral& Description: IC SRAM 16MBIT PARALLEL 48VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 2M x 8, 1M x 16
DigiKey Programmable: Not Verified
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CY62167G30-55BVXE CY62167G30-55BVXE Infineon Technologies download Description: IC SRAM 16MBIT PARALLEL 48VFBGA
Packaging: Tray
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 2M x 8, 1M x 16
DigiKey Programmable: Not Verified
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CY62167EV18LL-55BVXIT CY62167EV18LL-55BVXIT Infineon Technologies Infineon-CY62167EV18_MoBL_16-Mbit_(1_M_16)_Static_RAM-DataSheet-v16_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe53a531d2&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC SRAM 16MBIT PARALLEL 48VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 2.25V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 1M x 16
DigiKey Programmable: Not Verified
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CY62167GE18-55BVXI CY62167GE18-55BVXI Infineon Technologies Infineon-CY62167G_CY62167GE_MOBL_16_MBIT_(1M_WORDS_X_16_BIT_2M_WORDS_X_8_BIT)_STATIC_RAM_WITH_ERROR-CORRECTING_CODE_(ECC)-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eccbe004700&utm_source=cypress&utm_medium=referral& Description: IC SRAM 16MBIT PARALLEL 48VFBGA
Packaging: Tray
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 2.2V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 2M x 8, 1M x 16
DigiKey Programmable: Not Verified
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CY62167GE18-55BVXIT CY62167GE18-55BVXIT Infineon Technologies Infineon-CY62167G_CY62167GE_MOBL_16_MBIT_(1M_WORDS_X_16_BIT_2M_WORDS_X_8_BIT)_STATIC_RAM_WITH_ERROR-CORRECTING_CODE_(ECC)-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eccbe004700&utm_source=cypress&utm_medium=referral& Description: IC SRAM 16MBIT PARALLEL 48VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 2.2V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 2M x 8, 1M x 16
DigiKey Programmable: Not Verified
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T1060N65TOFXPSA1 T1060N65TOFXPSA1 Infineon Technologies Infineon-T1060N-DS-v02_02-en_de.pdf?fileId=db3a30433c1a8752013c43c707cf3655 Description: SCR MODULE 6500V 1650A DO200AD
Packaging: Tray
Package / Case: TO-200AE
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 350 mA
Current - Gate Trigger (Igt) (Max): 350 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 22500A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 1487 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (RMS)) (Max): 1650 A
Voltage - Off State: 6.5 kV
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S29GL512P10FFCR20 S29GL512P10FFCR20 Infineon Technologies 128_Mbit_3_V_Page_Flash_with_90_nm_MirrorBit_Process_Technology-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed7850458a5&utm_source=cypress&utm_medium=ref Description: IC FLASH 512MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (11x13)
Write Cycle Time - Word, Page: 100ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 32M x 16
DigiKey Programmable: Not Verified
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SAX-XC878-13FFA 5V AA SAX-XC878-13FFA 5V AA Infineon Technologies Infineon-XC87X-DS-v01_05-en.pdf?fileId=db3a30432239cccd01231293d56908b1&ack=t Description: IC MCU 8BIT 52KB FLASH 64LQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 27MHz
Program Memory Size: 52KB (52K x 8)
RAM Size: 3.25K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: XC800
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: SPI, SSI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: PG-LQFP-64-4
Number of I/O: 40
DigiKey Programmable: Not Verified
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SAX-XC878-13FFA 5V AC SAX-XC878-13FFA 5V AC Infineon Technologies Infineon-XC87X-DS-v01_05-en.pdf?fileId=db3a30432239cccd01231293d56908b1&ack=t Description: IC MCU 8BIT 52KB FLASH 64LQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 27MHz
Program Memory Size: 52KB (52K x 8)
RAM Size: 3.25K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: XC800
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: SPI, SSI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: PG-LQFP-64-4
Number of I/O: 40
DigiKey Programmable: Not Verified
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CY7C1021CV33-12BAXI CY7C1021CV33-12BAXI Infineon Technologies CY7C1021CV33%20Rev.H.pdf Description: IC SRAM 1MBIT PARALLEL 48FBGA
Packaging: Tray
Package / Case: 48-TFBGA
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-FBGA (7x7)
Write Cycle Time - Word, Page: 12ns
Memory Interface: Parallel
Access Time: 12 ns
Memory Organization: 64K x 16
DigiKey Programmable: Not Verified
на замовлення 1997 шт:
термін постачання 21-31 дні (днів)
346+63.05 грн
Мінімальне замовлення: 346
В кошику  од. на суму  грн.
CY7C10212CV33-12BAXET CY7C10212CV33-12BAXET Infineon Technologies CY7C10212CV33-12BAXET_Web.pdf Description: IC SRAM 1MBIT PARALLEL 48FBGA
Packaging: Tape & Reel (TR)
Package / Case: 48-TFBGA
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-FBGA (7x7)
Write Cycle Time - Word, Page: 12ns
Memory Interface: Parallel
Access Time: 12 ns
Memory Organization: 64K x 16
DigiKey Programmable: Not Verified
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CY9BF165LPMC1-G-JNE2 CY9BF165LPMC1-G-JNE2 Infineon Technologies Infineon-MB9B160L_Series_32-Bit_ARM_Cortex_-M4F_FM4_Microcontroller-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c81fb7ad20182159c3fb45f28 Description: IC MCU 32BIT 416KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 160MHz
Program Memory Size: 416KB (416K x 8)
RAM Size: 48K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 15x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Number of I/O: 48
DigiKey Programmable: Not Verified
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CY9AFB44MABGL-GK9E1 CY9AFB44MABGL-GK9E1 Infineon Technologies Description: IC MCU 32BIT 288KB FLASH 96FBGA
Packaging: Tray
Package / Case: 96-LFBGA
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 288KB (288K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 17x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, EBI/EMI, I2C, UART/USART, USB
Peripherals: DMA, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 96-FBGA (6x6)
Number of I/O: 66
DigiKey Programmable: Not Verified
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CY9AFB44MAPMC-G-JNE2 CY9AFB44MAPMC-G-JNE2 Infineon Technologies Description: MULTI-MARKET MCUS
Packaging: Tray
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 288KB (288K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 17x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, EBI/EMI, I2C, UART/USART, USB
Peripherals: DMA, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 80-LQFP (12x12)
Number of I/O: 66
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CY9AFB44MAPMC1-G-JNE2 Infineon Technologies Description: MULTI-MARKET MCUS
Packaging: Tray
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 288KB (288K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 17x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, EBI/EMI, I2C, UART/USART, USB
Peripherals: DMA, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 80-LQFP (14x14)
Number of I/O: 66
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CY7C64215-56LFXC CY7C64215.pdf
CY7C64215-56LFXC
Виробник: Infineon Technologies
Description: IC CNTRLR USB FS 56VQFN
Packaging: Tray
Package / Case: 56-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, USB
RAM Size: 1K x 8
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 5.25V
Controller Series: CY7C642xx
Program Memory Type: FLASH (16kB)
Applications: USB Microcontroller
Core Processor: M8C
Supplier Device Package: 56-QFN (8x8)
Number of I/O: 50
DigiKey Programmable: Not Verified
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FZ3600R17HE4HOSA2 Infineon-FZ3600R17HE4-DS-v02_05-EN.pdf?fileId=db3a30433e4143bd013e470701954203
FZ3600R17HE4HOSA2
Виробник: Infineon Technologies
Description: IGBT MODULE 1700V 7200A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 3600A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 7200 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 21000 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 295 nF @ 25 V
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FZ3600R17HE4PHPSA1 Infineon-FZ3600R17HE4P-DS-v03_00-EN.pdf?fileId=5546d462576f34750157dd48123d2822
FZ3600R17HE4PHPSA1
Виробник: Infineon Technologies
Description: IGBT MODULE 1700V 7200A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 3600A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 7200 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 295 nF @ 25 V
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+97055.50 грн
В кошику  од. на суму  грн.
IPS65R1K0CEAKMA1 Infineon-IPS65R1K0CE-DS-v02_00-EN.pdf?fileId=5546d46249be182c0149c7a3c90c1e8a
IPS65R1K0CEAKMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 4.3A TO251
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 1.5A, 10V
Power Dissipation (Max): 37W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 200µA
Supplier Device Package: TO-251
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 328 pF @ 100 V
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CY8C20536A-24PVXI Infineon-CY8C20XX6A_S_1.8_V_Programmable_CapSense_Controller_with_SmartSense_Auto-tuning_1-33_Buttons_0-6_Sliders-DataSheet-v26_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecc6dc04671&utm_source=cypress&utm_medium=referral&utm_camp
CY8C20536A-24PVXI
Виробник: Infineon Technologies
Description: IC MCU 8K FLASH 1K SRAM 48SSOP
Packaging: Tube
Package / Case: 48-BSSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Interface: I2C, SPI
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Controller Series: CY8C20xx6A
Program Memory Type: FLASH (8kB)
Applications: Capacitive Sensing
Core Processor: M8C
Supplier Device Package: 48-SSOP
Number of I/O: 36
DigiKey Programmable: Not Verified
на замовлення 363 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+463.92 грн
10+400.93 грн
25+379.01 грн
100+308.27 грн
250+292.46 грн
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CY95F633KNPMC-G-UNCGE2 Infineon-CY95630H_Series_New_8FX_8-bit_Microcontrollers-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edd859f61fe
CY95F633KNPMC-G-UNCGE2
Виробник: Infineon Technologies
Description: IC MCU 8BIT 12KB FLASH 32LQFP
Packaging: Tray
Package / Case: 32-LQFP
Mounting Type: Surface Mount
Speed: 16.25MHz
Program Memory Size: 12KB (12K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 8x8/10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V
Connectivity: I2C, LINbus, SIO, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 32-LQFP (7x7)
Number of I/O: 25
DigiKey Programmable: Not Verified
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+193.89 грн
10+167.73 грн
25+158.59 грн
80+128.98 грн
250+122.37 грн
500+109.80 грн
1000+91.08 грн
2500+86.53 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
CY95F634HNPMC-G-UNE2 Infineon-CY95630H_Series_New_8FX_8-bit_Microcontrollers-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edd859f61fe
CY95F634HNPMC-G-UNE2
Виробник: Infineon Technologies
Description: IC MM MCU 32LQFP
Packaging: Tray
Package / Case: 32-LQFP
Mounting Type: Surface Mount
Speed: 16.25MHz
Program Memory Size: 20KB (20K x 8)
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 8x8/10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V
Connectivity: I2C, LINbus, SIO, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 32-LQFP (7x7)
Number of I/O: 28
DigiKey Programmable: Not Verified
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+232.35 грн
10+201.30 грн
25+190.31 грн
80+154.78 грн
250+146.84 грн
500+131.76 грн
1000+109.30 грн
2500+103.84 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
CY9BF406RAPMC-G-UNE1 download
CY9BF406RAPMC-G-UNE1
Виробник: Infineon Technologies
Description: IC MCU 32BIT 512KB FLASH 120LQFP
Packaging: Tray
Package / Case: 120-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 16x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 120-LQFP (16x16)
Number of I/O: 100
DigiKey Programmable: Not Verified
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CY9AF116MAPMC-GNCGE2 Infineon-CY9A110A_Series_32_Bit_ARM_(R)_Cortex_(R)-M3_FM3_Microcontroller-DataSheet-v07_00-CN.pdf?fileId=8ac78c8c7d0d8da4017d0eddeb686295
CY9AF116MAPMC-GNCGE2
Виробник: Infineon Technologies
Description: IC MCU 32BIT 512KB FLASH 80LQFP
Packaging: Tray
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 12x12b SAR
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 80-LQFP (12x12)
Number of I/O: 66
DigiKey Programmable: Not Verified
на замовлення 1190 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+534.57 грн
10+398.59 грн
25+369.36 грн
119+313.55 грн
357+297.56 грн
595+291.65 грн
1071+281.13 грн
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CYT3DLABHBQ1AESGS Infineon-CYT3DL_TRAVEO_TM_T2G_32-BIT_AUTOMOTIVE_MCU_BASED_ON_ARM_R_CORTEX_R_-M7_SINGLE-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c869190210186f0ccf72f3fd3
CYT3DLABHBQ1AESGS
Виробник: Infineon Technologies
Description: IC MCU 32BT 4.063MB FLSH 216TQFP
Packaging: Tray
Package / Case: 216-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 240MHz
Program Memory Size: 4.063MB (4.063M x 8)
RAM Size: 384K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: DMA, I2S, LVD, Temp Sensor, WDT
Peripherals: DMA, I2S, LVD, WDT
Supplier Device Package: 216-TEQFP (24x24)
Number of I/O: 108
DigiKey Programmable: Not Verified
на замовлення 400 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2559.79 грн
10+2005.48 грн
40+1842.33 грн
120+1643.60 грн
280+1593.59 грн
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KIT1EDBAUXGANTOBO1
KIT1EDBAUXGANTOBO1
Виробник: Infineon Technologies
Description: EVAL BOARD FOR 1EDB8275F
Packaging: Bulk
Function: Gate Driver
Type: Power Management
Utilized IC / Part: 1EDB8275F, 1EDN7511B
Supplied Contents: Board(s)
Primary Attributes: Isolated
Embedded: No
Contents: Board(s)
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+10355.35 грн
В кошику  од. на суму  грн.
IMW65R015M2HXKSA1 Infineon-IMW65R015M2H-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018dd63bb7ba52e8
IMW65R015M2HXKSA1
Виробник: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 93A (Tc)
Rds On (Max) @ Id, Vgs: 13.2mOhm @ 64.2A, 20V
Power Dissipation (Max): 341W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 13mA
Supplier Device Package: PG-TO247-3-40
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2792 pF @ 400 V
на замовлення 228 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1436.50 грн
30+908.79 грн
120+847.31 грн
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IMW65R007M2HXKSA1 IMW65R007M2H.pdf
IMW65R007M2HXKSA1
Виробник: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 171A (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 146.3A, 20V
Power Dissipation (Max): 625W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 29.7mA
Supplier Device Package: PG-TO247-3-U06
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 179 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 6359 pF @ 400 V
на замовлення 79 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2257.58 грн
30+1605.30 грн
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IRGS4615DPBF IRGx4615DPbF.pdf
IRGS4615DPBF
Виробник: Infineon Technologies
Description: IGBT 600V 23A 99W D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 60 ns
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 8A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 30ns/95ns
Switching Energy: 70µJ (on), 145µJ (off)
Test Condition: 400V, 8A, 47Ohm, 15V
Gate Charge: 19 nC
Current - Collector (Ic) (Max): 23 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 99 W
на замовлення 350 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
237+92.66 грн
Мінімальне замовлення: 237
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IRGS4615DPBF IRGx4615DPbF.pdf
IRGS4615DPBF
Виробник: Infineon Technologies
Description: IGBT 600V 23A 99W D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 60 ns
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 8A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 30ns/95ns
Switching Energy: 70µJ (on), 145µJ (off)
Test Condition: 400V, 8A, 47Ohm, 15V
Gate Charge: 19 nC
Current - Collector (Ic) (Max): 23 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 99 W
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IRGSL4B60KD1PBF fundamentals-of-power-semiconductors
IRGSL4B60KD1PBF
Виробник: Infineon Technologies
Description: IGBT NPT 600V 11A TO-262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 93 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 4A
Supplier Device Package: TO-262
IGBT Type: NPT
Td (on/off) @ 25°C: 22ns/100ns
Switching Energy: 73µJ (on), 47µJ (off)
Test Condition: 400V, 4A, 100Ohm, 15V
Gate Charge: 12 nC
Current - Collector (Ic) (Max): 11 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 22 A
Power - Max: 63 W
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S25FL128SAGNFV011 Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17
S25FL128SAGNFV011
Виробник: Infineon Technologies
Description: IC FLASH 128MBIT SPI/QUAD 8WSON
Packaging: Tube
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Memory Interface: SPI - Quad I/O
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
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BAR 67-02V E6327 fundamentals-of-power-semiconductors
BAR 67-02V E6327
Виробник: Infineon Technologies
Description: RF DIODE PIN 150V 250MW SC79-2
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.55pF @ 5V, 1MHz
Resistance @ If, F: 1Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 150V
Supplier Device Package: PG-SC79-2
Current - Max: 200 mA
Power Dissipation (Max): 250 mW
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CY8CKIT-062S2-AI Infineon-CY8CKIT-062S2-AI_Product_Brief-ProductBrief-v01_00-EN.pdf?fileId=8ac78c8c8e7ead30018ee43d7df20372
CY8CKIT-062S2-AI
Виробник: Infineon Technologies
Description: PSOC 6 AI EVAL BOARD
Packaging: Box
For Use With/Related Products: BGT60TR13C
Sensitivity: 60GHz
Frequency: 60GHz
Interface: RF
Type: Transceiver; RADAR
Contents: Board(s)
Sensor Type: Accelerometer, Gyroscope, Magnetometer, Microphone, Pressure, Radar
Utilized IC / Part: BGT60, BMI270, BMM350, DPS368, IM72D128
Supplied Contents: Board(s)
Embedded: Yes, MCU, 32-Bit
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2674.40 грн
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FS1150R08A8P3LMCHPSA1 Infineon-FS1150R08A8P3LMC-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f15854bae0098
FS1150R08A8P3LMCHPSA1
Виробник: Infineon Technologies
Description: FS1150R08A8P3LMCHPSA1
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.21V @ 15V, 600A
NTC Thermistor: No
Current - Collector (Ic) (Max): 1.15 kA
Voltage - Collector Emitter Breakdown (Max): 750 V
Power - Max: 1 kW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 60800 pF @ 50 V
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FS1150R08A8P3LBCHPSA1 Infineon-FS1150R08A8P3LBC-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f157c21bb0095
FS1150R08A8P3LBCHPSA1
Виробник: Infineon Technologies
Description: FS1150R08A8P3LBCHPSA1
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.21V @ 15V, 600A
NTC Thermistor: No
Current - Collector (Ic) (Max): 1.15 kA
Voltage - Collector Emitter Breakdown (Max): 750 V
Power - Max: 1 kW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 60800 pF @ 50 V
на замовлення 85 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+31867.50 грн
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KP467XTMA1 KP467.pdf
KP467XTMA1
Виробник: Infineon Technologies
Description: MEMS GROWTH
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads, Exposed Pad
Output Type: SPI
Mounting Type: Surface Mount
Output: 14 b
Operating Pressure: 6.52PSI ~ 29.01PSI (45kPa ~ 200kPa)
Pressure Type: Absolute
Accuracy: ±0.435PSI (±3kPa)
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 3V ~ 5.25V
Applications: Industrial Automation, Medical Ventilation
Supplier Device Package: PG-DFN-8-1
Port Style: No Port
Maximum Pressure: 87.02PSI (600kPa)
Grade: Automotive
Qualification: AEC-Q103-002
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KP467XTMA1 KP467.pdf
KP467XTMA1
Виробник: Infineon Technologies
Description: MEMS GROWTH
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads, Exposed Pad
Output Type: SPI
Mounting Type: Surface Mount
Output: 14 b
Operating Pressure: 6.52PSI ~ 29.01PSI (45kPa ~ 200kPa)
Pressure Type: Absolute
Accuracy: ±0.435PSI (±3kPa)
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 3V ~ 5.25V
Applications: Industrial Automation, Medical Ventilation
Supplier Device Package: PG-DFN-8-1
Port Style: No Port
Maximum Pressure: 87.02PSI (600kPa)
Grade: Automotive
Qualification: AEC-Q103-002
на замовлення 1296 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+218.22 грн
5+187.46 грн
10+179.07 грн
25+158.65 грн
50+152.25 грн
100+146.39 грн
500+132.40 грн
1000+128.17 грн
Мінімальне замовлення: 2
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AIMZH120R020M1TXKSA1 Infineon-AIMZH120R020M1T-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8c3de074018c68ea06f24a7c
AIMZH120R020M1TXKSA1
Виробник: Infineon Technologies
Description: SIC_DISCRETE
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 43A, 20V
Power Dissipation (Max): 429W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 13.7mA
Supplier Device Package: PG-TO247-4-11
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2667 pF @ 800 V
Qualification: AEC-Q101
на замовлення 144 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1705.74 грн
30+1051.56 грн
120+983.06 грн
В кошику  од. на суму  грн.
CY7C1041CV33-10BAJXE Infineon-CY7C1041CV33_Automotive_4-Mbit_(256_K_16)_Static_RAM-AdditionalTechnicalInformation-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecab2cc43b0&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integr
CY7C1041CV33-10BAJXE
Виробник: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 48FBGA
Packaging: Tray
Package / Case: 48-TFBGA
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-FBGA (7x8.5)
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
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CY7C1041BN-20ZSXA download
CY7C1041BN-20ZSXA
Виробник: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 44TSOP II
Packaging: Tray
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 20ns
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
CY7C1041CV33-15VC CY7C1041CV33%20RevH.pdf
CY7C1041CV33-15VC
Виробник: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 44SOJ
Packaging: Tube
Package / Case: 44-BSOJ (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-SOJ
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
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CY3261-RGB
Виробник: Infineon Technologies
Description: KIT DEMO PSOC RGB LIGHT
Features: Dimmable
Packaging: Bulk
Voltage - Input: 6V
Utilized IC / Part: CY8C27443
Supplied Contents: Board(s), Power Supply
Outputs and Type: 3, Non-Isolated
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CY7C64345-32LQXC download
CY7C64345-32LQXC
Виробник: Infineon Technologies
Description: IC MCU USB ENCORE CONTROL 32QFN
Packaging: Tray
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI, USB
RAM Size: 1K x 8
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 5.5V
Controller Series: CY7C643xx
Program Memory Type: FLASH (16kB)
Applications: USB Microcontroller
Core Processor: M8C
Supplier Device Package: 32-QFN (5x5)
Number of I/O: 25
DigiKey Programmable: Not Verified
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CY7C64345-32LQXCT download
CY7C64345-32LQXCT
Виробник: Infineon Technologies
Description: IC MCU USB ENCORE CONTROL 32QFN
Packaging: Tape & Reel (TR)
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI, USB
RAM Size: 1K x 8
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 5.5V
Controller Series: CY7C643xx
Program Memory Type: FLASH (16kB)
Applications: USB Microcontroller
Core Processor: M8C
Supplier Device Package: 32-QFN (5x5)
Number of I/O: 25
DigiKey Programmable: Not Verified
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CY7C64343-32LQXCT download
CY7C64343-32LQXCT
Виробник: Infineon Technologies
Description: IC MCU USB ENCORE CONTROL 32QFN
Packaging: Tape & Reel (TR)
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI, USB
RAM Size: 1K x 8
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 5.5V
Controller Series: CY7C643xx
Program Memory Type: FLASH (8kB)
Applications: USB Microcontroller
Core Processor: M8C
Supplier Device Package: 32-QFN (5x5)
Number of I/O: 25
DigiKey Programmable: Not Verified
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S29PL127J60TFID30H
S29PL127J60TFID30H
Виробник: Infineon Technologies
Description: IC FLASH 128MBIT PARALLEL 56TSOP
Packaging: Tray
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 60 ns
Memory Organization: 8M x 16
DigiKey Programmable: Not Verified
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IPDD60R037CM8XTMA1 Infineon-IPDD60R037CM8-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c8d2fe47b018d8d1df1830479
IPDD60R037CM8XTMA1
Виробник: Infineon Technologies
Description: IPDD60R037CM8XTMA1
Packaging: Tape & Reel (TR)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 72A (Tj)
Rds On (Max) @ Id, Vgs: 37mOhm @ 27A, 10V
Power Dissipation (Max): 416W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 680µA
Supplier Device Package: PG-HDSOP-10-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3458 pF @ 400 V
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IPDD60R037CM8XTMA1 Infineon-IPDD60R037CM8-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c8d2fe47b018d8d1df1830479
IPDD60R037CM8XTMA1
Виробник: Infineon Technologies
Description: IPDD60R037CM8XTMA1
Packaging: Cut Tape (CT)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 72A (Tj)
Rds On (Max) @ Id, Vgs: 37mOhm @ 27A, 10V
Power Dissipation (Max): 416W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 680µA
Supplier Device Package: PG-HDSOP-10-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3458 pF @ 400 V
на замовлення 184 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+442.72 грн
10+343.86 грн
100+278.10 грн
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IPDD60R180CM8XTMA1
IPDD60R180CM8XTMA1
Виробник: Infineon Technologies
Description: IPDD60R180CM8XTMA1
Packaging: Tape & Reel (TR)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tj)
Rds On (Max) @ Id, Vgs: 180mOhm @ 5.6A, 10V
Power Dissipation (Max): 169W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 140µA
Supplier Device Package: PG-HDSOP-10-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 743 pF @ 400 V
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IPDD60R180CM8XTMA1
IPDD60R180CM8XTMA1
Виробник: Infineon Technologies
Description: IPDD60R180CM8XTMA1
Packaging: Cut Tape (CT)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tj)
Rds On (Max) @ Id, Vgs: 180mOhm @ 5.6A, 10V
Power Dissipation (Max): 169W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 140µA
Supplier Device Package: PG-HDSOP-10-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 743 pF @ 400 V
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ISZ520N20NM6ATMA1 Infineon-ISZ520N20NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8d2fe47b018d3286fe540f2f
ISZ520N20NM6ATMA1
Виробник: Infineon Technologies
Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 26A (Tc)
Rds On (Max) @ Id, Vgs: 47.8mOhm @ 15A, 15V
Power Dissipation (Max): 2.5W (Ta), 88W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 31µA
Supplier Device Package: PG-TSDSON-8-34
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 14.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 960 pF @ 100 V
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ISZ520N20NM6ATMA1 Infineon-ISZ520N20NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8d2fe47b018d3286fe540f2f
ISZ520N20NM6ATMA1
Виробник: Infineon Technologies
Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 26A (Tc)
Rds On (Max) @ Id, Vgs: 47.8mOhm @ 15A, 15V
Power Dissipation (Max): 2.5W (Ta), 88W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 31µA
Supplier Device Package: PG-TSDSON-8-34
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 14.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 960 pF @ 100 V
на замовлення 3535 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+137.37 грн
10+94.26 грн
100+71.18 грн
500+56.38 грн
1000+56.06 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
XC836MT2FRAABLXUMA1 Orderable_Part_Number_OPN_Translation_Table_Web.pdf
Виробник: Infineon Technologies
Description: IC MCU 8BIT 8KB FLASH 28TSSOP
Packaging: Bulk
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: XC800
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.5V ~ 5.5V
Connectivity: I2C, SSC, UART/USART
Peripherals: Brown-out Detect/Reset, LED, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-28-1
Number of I/O: 25
DigiKey Programmable: Not Verified
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LTA2102XUMA1
Виробник: Infineon Technologies
Description: DIGITAL CHARGER/ADAPTER
Packaging: Tape & Reel (TR)
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CYPD727268LQXQTXUMA1
Виробник: Infineon Technologies
Description: CHARGER_ADAPTER
Packaging: Tape & Reel (TR)
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IQDH88N06LM5CGATMA1 Infineon-IQDH88N06LM5CG-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c88ae21230188b39789f50841
IQDH88N06LM5CGATMA1
Виробник: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Tape & Reel (TR)
Package / Case: 9-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 447A (Tc)
Rds On (Max) @ Id, Vgs: 0.86mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 163µA
Supplier Device Package: PG-TTFN-9-U02
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 30 V
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IQDH88N06LM5CGATMA1 Infineon-IQDH88N06LM5CG-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c88ae21230188b39789f50841
IQDH88N06LM5CGATMA1
Виробник: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
Package / Case: 9-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 447A (Tc)
Rds On (Max) @ Id, Vgs: 0.86mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 163µA
Supplier Device Package: PG-TTFN-9-U02
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 30 V
на замовлення 3863 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+272.39 грн
10+198.27 грн
25+182.23 грн
100+154.47 грн
250+150.16 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
CY62167ELL-45ZXI Infineon-CY62167E_16-Mbit_(1_M_16_2_M_8)_Static_RAM-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebed5b432bc&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY62167ELL-45ZXI
Виробник: Infineon Technologies
Description: IC SRAM 16MBIT PARALLEL 48TSOP I
Packaging: Tray
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-TSOP I
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 2M x 8, 1M x 16
DigiKey Programmable: Not Verified
на замовлення 239 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1170.39 грн
10+1000.89 грн
25+954.55 грн
40+874.24 грн
96+835.40 грн
В кошику  од. на суму  грн.
CY62167ELL-45ZXIT Infineon-CY62167E_16-Mbit_(1_M_16_2_M_8)_Static_RAM-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebed5b432bc&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY62167ELL-45ZXIT
Виробник: Infineon Technologies
Description: IC SRAM 16MBIT PARALLEL 48TSOP I
Packaging: Cut Tape (CT)
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-TSOP I
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 2M x 8, 1M x 16
DigiKey Programmable: Not Verified
на замовлення 2993 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1170.39 грн
10+1000.89 грн
25+954.55 грн
50+864.18 грн
100+833.63 грн
250+794.81 грн
500+754.03 грн
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CY62167G-45BVXIT Infineon-CY62167G_CY62167GE_MOBL_16_MBIT_(1M_WORDS_X_16_BIT_2M_WORDS_X_8_BIT)_STATIC_RAM_WITH_ERROR-CORRECTING_CODE_(ECC)-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eccbe004700&utm_source=cypress&utm_medium=referral&
CY62167G-45BVXIT
Виробник: Infineon Technologies
Description: IC SRAM 16MBIT PARALLEL 48VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 2M x 8, 1M x 16
DigiKey Programmable: Not Verified
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CY62167G30-55BVXE download
CY62167G30-55BVXE
Виробник: Infineon Technologies
Description: IC SRAM 16MBIT PARALLEL 48VFBGA
Packaging: Tray
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 2M x 8, 1M x 16
DigiKey Programmable: Not Verified
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CY62167EV18LL-55BVXIT Infineon-CY62167EV18_MoBL_16-Mbit_(1_M_16)_Static_RAM-DataSheet-v16_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe53a531d2&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY62167EV18LL-55BVXIT
Виробник: Infineon Technologies
Description: IC SRAM 16MBIT PARALLEL 48VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 2.25V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 1M x 16
DigiKey Programmable: Not Verified
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CY62167GE18-55BVXI Infineon-CY62167G_CY62167GE_MOBL_16_MBIT_(1M_WORDS_X_16_BIT_2M_WORDS_X_8_BIT)_STATIC_RAM_WITH_ERROR-CORRECTING_CODE_(ECC)-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eccbe004700&utm_source=cypress&utm_medium=referral&
CY62167GE18-55BVXI
Виробник: Infineon Technologies
Description: IC SRAM 16MBIT PARALLEL 48VFBGA
Packaging: Tray
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 2.2V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 2M x 8, 1M x 16
DigiKey Programmable: Not Verified
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CY62167GE18-55BVXIT Infineon-CY62167G_CY62167GE_MOBL_16_MBIT_(1M_WORDS_X_16_BIT_2M_WORDS_X_8_BIT)_STATIC_RAM_WITH_ERROR-CORRECTING_CODE_(ECC)-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eccbe004700&utm_source=cypress&utm_medium=referral&
CY62167GE18-55BVXIT
Виробник: Infineon Technologies
Description: IC SRAM 16MBIT PARALLEL 48VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 2.2V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 2M x 8, 1M x 16
DigiKey Programmable: Not Verified
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T1060N65TOFXPSA1 Infineon-T1060N-DS-v02_02-en_de.pdf?fileId=db3a30433c1a8752013c43c707cf3655
T1060N65TOFXPSA1
Виробник: Infineon Technologies
Description: SCR MODULE 6500V 1650A DO200AD
Packaging: Tray
Package / Case: TO-200AE
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 350 mA
Current - Gate Trigger (Igt) (Max): 350 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 22500A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 1487 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (RMS)) (Max): 1650 A
Voltage - Off State: 6.5 kV
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S29GL512P10FFCR20 128_Mbit_3_V_Page_Flash_with_90_nm_MirrorBit_Process_Technology-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed7850458a5&utm_source=cypress&utm_medium=ref
S29GL512P10FFCR20
Виробник: Infineon Technologies
Description: IC FLASH 512MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (11x13)
Write Cycle Time - Word, Page: 100ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 32M x 16
DigiKey Programmable: Not Verified
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SAX-XC878-13FFA 5V AA Infineon-XC87X-DS-v01_05-en.pdf?fileId=db3a30432239cccd01231293d56908b1&ack=t
SAX-XC878-13FFA 5V AA
Виробник: Infineon Technologies
Description: IC MCU 8BIT 52KB FLASH 64LQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 27MHz
Program Memory Size: 52KB (52K x 8)
RAM Size: 3.25K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: XC800
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: SPI, SSI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: PG-LQFP-64-4
Number of I/O: 40
DigiKey Programmable: Not Verified
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SAX-XC878-13FFA 5V AC Infineon-XC87X-DS-v01_05-en.pdf?fileId=db3a30432239cccd01231293d56908b1&ack=t
SAX-XC878-13FFA 5V AC
Виробник: Infineon Technologies
Description: IC MCU 8BIT 52KB FLASH 64LQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 27MHz
Program Memory Size: 52KB (52K x 8)
RAM Size: 3.25K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: XC800
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: SPI, SSI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: PG-LQFP-64-4
Number of I/O: 40
DigiKey Programmable: Not Verified
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CY7C1021CV33-12BAXI CY7C1021CV33%20Rev.H.pdf
CY7C1021CV33-12BAXI
Виробник: Infineon Technologies
Description: IC SRAM 1MBIT PARALLEL 48FBGA
Packaging: Tray
Package / Case: 48-TFBGA
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-FBGA (7x7)
Write Cycle Time - Word, Page: 12ns
Memory Interface: Parallel
Access Time: 12 ns
Memory Organization: 64K x 16
DigiKey Programmable: Not Verified
на замовлення 1997 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
346+63.05 грн
Мінімальне замовлення: 346
В кошику  од. на суму  грн.
CY7C10212CV33-12BAXET CY7C10212CV33-12BAXET_Web.pdf
CY7C10212CV33-12BAXET
Виробник: Infineon Technologies
Description: IC SRAM 1MBIT PARALLEL 48FBGA
Packaging: Tape & Reel (TR)
Package / Case: 48-TFBGA
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-FBGA (7x7)
Write Cycle Time - Word, Page: 12ns
Memory Interface: Parallel
Access Time: 12 ns
Memory Organization: 64K x 16
DigiKey Programmable: Not Verified
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CY9BF165LPMC1-G-JNE2 Infineon-MB9B160L_Series_32-Bit_ARM_Cortex_-M4F_FM4_Microcontroller-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c81fb7ad20182159c3fb45f28
CY9BF165LPMC1-G-JNE2
Виробник: Infineon Technologies
Description: IC MCU 32BIT 416KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 160MHz
Program Memory Size: 416KB (416K x 8)
RAM Size: 48K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 15x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Number of I/O: 48
DigiKey Programmable: Not Verified
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CY9AFB44MABGL-GK9E1
CY9AFB44MABGL-GK9E1
Виробник: Infineon Technologies
Description: IC MCU 32BIT 288KB FLASH 96FBGA
Packaging: Tray
Package / Case: 96-LFBGA
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 288KB (288K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 17x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, EBI/EMI, I2C, UART/USART, USB
Peripherals: DMA, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 96-FBGA (6x6)
Number of I/O: 66
DigiKey Programmable: Not Verified
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CY9AFB44MAPMC-G-JNE2
CY9AFB44MAPMC-G-JNE2
Виробник: Infineon Technologies
Description: MULTI-MARKET MCUS
Packaging: Tray
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 288KB (288K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 17x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, EBI/EMI, I2C, UART/USART, USB
Peripherals: DMA, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 80-LQFP (12x12)
Number of I/O: 66
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CY9AFB44MAPMC1-G-JNE2
Виробник: Infineon Technologies
Description: MULTI-MARKET MCUS
Packaging: Tray
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 288KB (288K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 17x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, EBI/EMI, I2C, UART/USART, USB
Peripherals: DMA, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 80-LQFP (14x14)
Number of I/O: 66
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