Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (126714) > Сторінка 728 з 2112
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||
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IPD040N03LF2SATMA1 | Infineon Technologies |
 Description: IPD040N03LF2SATMA1Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Power Dissipation (Max): 3W (Ta), 75W (Tc) Vgs(th) (Max) @ Id: 2.35V @ 30µA Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 15 V Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 73A (Tc) Rds On (Max) @ Id, Vgs: 4.05mOhm @ 40A, 10V Supplier Device Package: PG-TO252-3-34 |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||||||
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IPD040N03LF2SATMA1 | Infineon Technologies |
Description: IPD040N03LF2SATMA1 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 73A (Tc) Rds On (Max) @ Id, Vgs: 4.05mOhm @ 40A, 10V Power Dissipation (Max): 3W (Ta), 75W (Tc) Vgs(th) (Max) @ Id: 2.35V @ 30µA Supplier Device Package: PG-TO252-3-34 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 15 V |
на замовлення 1846 шт: термін постачання 21-31 дні (днів) |
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S25FL128LAGNFI013 | Infineon Technologies |
Description: IC FLASH 128MBIT SPI/QUAD 8WSON Packaging: Tape & Reel (TR) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 128Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (5x6) Memory Interface: SPI - Quad I/O, QPI Memory Organization: 16M x 8 DigiKey Programmable: Not Verified |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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S25FL128LAGNFI013 | Infineon Technologies |
Description: IC FLASH 128MBIT SPI/QUAD 8WSON Packaging: Cut Tape (CT) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 128Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (5x6) Memory Interface: SPI - Quad I/O, QPI Memory Organization: 16M x 8 DigiKey Programmable: Not Verified |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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IMZA65R040M2HXKSA1 | Infineon Technologies |
Description: SILICON CARBIDE MOSFET Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 46A (Tc) Rds On (Max) @ Id, Vgs: 36mOhm @ 22.9A, 20V Power Dissipation (Max): 172W (Tc) Vgs(th) (Max) @ Id: 5.6V @ 4.6mA Supplier Device Package: PG-TO247-4-8 Drive Voltage (Max Rds On, Min Rds On): 15V, 20V Vgs (Max): +23V, -7V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 997 pF @ 400 V |
на замовлення 299 шт: термін постачання 21-31 дні (днів) |
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FF2600UXTR33T2M1BPSA1 | Infineon Technologies |
Description: MOSFET 2N-CH 3300V AG-XHP2K33 Supplier Device Package: AG-XHP2K33 Vgs(th) (Max) @ Id: 5.55V @ 675mA Gate Charge (Qg) (Max) @ Vgs: 3750nC @ 15V Rds On (Max) @ Id, Vgs: 3.1mOhm @ 750A, 15V Input Capacitance (Ciss) (Max) @ Vds: 152000pF @ 1.8kV Current - Continuous Drain (Id) @ 25°C: 720A (Tc) Drain to Source Voltage (Vdss): 3300V (3.3kV) Technology: Silicon Carbide (SiC) Operating Temperature: -40°C ~ 175°C (TJ) Configuration: 2 N-Channel (Half Bridge) Mounting Type: Chassis Mount Package / Case: Module Packaging: Box |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
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F3L200R07W2S5PB95BPSA1 | Infineon Technologies |
Description: F3L200R07W2S5PB95BPSA1 Input Capacitance (Cies) @ Vce: 14300 pF @ 25 V Current - Collector Cutoff (Max): 45 µA Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 200 A IGBT Type: Trench Field Stop NTC Thermistor: Yes Vce(on) (Max) @ Vge, Ic: 1.67V @ 15V, 150A Operating Temperature: -40°C ~ 150°C (TJ) Configuration: Three Level Inverter Input: Standard Mounting Type: Chassis Mount Package / Case: Module Packaging: Box |
на замовлення 15 шт: термін постачання 21-31 дні (днів) |
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FF4000UXTR33T2M1BPSA1 | Infineon Technologies |
Description: MOSFET 2 N-CH 3300V XHP2K17 Supplier Device Package: AG-XHP2K17 Vgs(th) (Max) @ Id: 5.55V @ 450mA Gate Charge (Qg) (Max) @ Vgs: 2500nC @ 15V Rds On (Max) @ Id, Vgs: 4.8mOhm @ 500A, 15V Input Capacitance (Ciss) (Max) @ Vds: 101000pF @ 1800V Current - Continuous Drain (Id) @ 25°C: 500A (Tc) Drain to Source Voltage (Vdss): 3300V (3.3kV) Technology: Silicon Carbide (SiC) Operating Temperature: -40°C ~ 175°C (TJ) Configuration: 2 N-Channel (Half Bridge) Mounting Type: Chassis Mount Package / Case: Module Packaging: Tray |
на замовлення 4 шт: термін постачання 21-31 дні (днів) |
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TLE98442QXXUMA2 | Infineon Technologies |
Description: EMBEDDED_POWER Packaging: Tape & Reel (TR) Package / Case: 48-VFQFN Exposed Pad Mounting Type: Surface Mount Interface: LIN, SPI, SSC, UART RAM Size: 4K x 8 Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 3V ~ 28V Program Memory Type: FLASH (64kB) Core Processor: ARM® Cortex®-M0 Supplier Device Package: PG-VQFN-48-79 Grade: Automotive Number of I/O: 10 Qualification: AEC-Q100 |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||
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IRG4BC30FD1PBF | Infineon Technologies |
Description: IGBT 600V 31A TO-220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 46 ns Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 17A Supplier Device Package: TO-220AB Td (on/off) @ 25°C: 22ns/250ns Switching Energy: 370µJ (on), 1.42mJ (off) Test Condition: 480V, 17A, 23Ohm, 15V Gate Charge: 57 nC Current - Collector (Ic) (Max): 31 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 124 A Power - Max: 100 W |
на замовлення 185 шт: термін постачання 21-31 дні (днів) |
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IRG4BC30FD1PBF | Infineon Technologies |
Description: IGBT 600V 31A TO-220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 46 ns Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 17A Supplier Device Package: TO-220AB Td (on/off) @ 25°C: 22ns/250ns Switching Energy: 370µJ (on), 1.42mJ (off) Test Condition: 480V, 17A, 23Ohm, 15V Gate Charge: 57 nC Current - Collector (Ic) (Max): 31 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 124 A Power - Max: 100 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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CYW43022CUBT | Infineon Technologies |
Description: WI-FI COMBO IOT Packaging: Tape & Reel (TR) Package / Case: 106-UFBGA, WLBGA Mounting Type: Surface Mount Frequency: 2.4GHz ~ 5GHz Memory Size: 1.125MB ROM, 388kB SRAM Type: TxRx + MCU Operating Temperature: -20°C ~ 70°C Voltage - Supply: 3.2V ~ 4.6V Power - Output: 20dBm Protocol: Bluetooth v5.4 Data Rate (Max): 3Mbps Supplier Device Package: SG-XFWLB-106 GPIO: 40 RF Family/Standard: Bluetooth, WiFi Serial Interfaces: I2C, SDIO, SPI, UART |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||||
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CYW43022CUBT | Infineon Technologies |
Description: WI-FI COMBO IOT Packaging: Cut Tape (CT) Package / Case: 106-UFBGA, WLBGA Mounting Type: Surface Mount Frequency: 2.4GHz ~ 5GHz Memory Size: 1.125MB ROM, 388kB SRAM Type: TxRx + MCU Operating Temperature: -20°C ~ 70°C Voltage - Supply: 3.2V ~ 4.6V Power - Output: 20dBm Protocol: Bluetooth v5.4 Data Rate (Max): 3Mbps Supplier Device Package: SG-XFWLB-106 GPIO: 40 RF Family/Standard: Bluetooth, WiFi Serial Interfaces: I2C, SDIO, SPI, UART |
на замовлення 4994 шт: термін постачання 21-31 дні (днів) |
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ICE5QR1070AZXKLA1 | Infineon Technologies |
Description: AC-DC INTEGRATED POWER STAGE - C Packaging: Bulk |
на замовлення 1956 шт: термін постачання 21-31 дні (днів) |
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CY90911ASPMC-GS-106E1 | Infineon Technologies |
Description: IC MCU 16BIT 64KB MROM 48LQFP Packaging: Tray Package / Case: 48-LQFP Mounting Type: Surface Mount Speed: 32MHz Program Memory Size: 64KB (64K x 8) RAM Size: 4K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: External Program Memory Type: Mask ROM Core Processor: F²MC-16LX Data Converters: A/D 16x8/10b Core Size: 16-Bit Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V Connectivity: CANbus, LINbus, UART/USART Peripherals: POR, WDT Supplier Device Package: 48-LQFP (7x7) Number of I/O: 36 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IGLT65R110D2ATMA1 | Infineon Technologies |
Description: GANFET N-CH 650V 15A 16SOP Packaging: Tape & Reel (TR) Package / Case: 16-PowerSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 140mOhm @ 4A Power Dissipation (Max): 55W (Tc) Vgs(th) (Max) @ Id: 1.6V @ 1.3mA Supplier Device Package: PG-HDSOP-16-8 Vgs (Max): -10V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 2.4 nC @ 3 V Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 400 V |
товару немає в наявності |
Мінімальне замовлення: 1800 шт В кошику од. на суму грн. | ||||||||||||||||
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IGLT65R110D2ATMA1 | Infineon Technologies |
Description: GANFET N-CH 650V 15A 16SOP Packaging: Cut Tape (CT) Package / Case: 16-PowerSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 140mOhm @ 4A Power Dissipation (Max): 55W (Tc) Vgs(th) (Max) @ Id: 1.6V @ 1.3mA Supplier Device Package: PG-HDSOP-16-8 Vgs (Max): -10V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 2.4 nC @ 3 V Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 400 V |
на замовлення 691 шт: термін постачання 21-31 дні (днів) |
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IQDH29NE2LM5CGSCATMA1 | Infineon Technologies |
Description: OPTIMOS POWER MOSFETS 25 V - 150 Packaging: Tape & Reel (TR) Package / Case: 9-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Ta), 789A (Tc) Rds On (Max) @ Id, Vgs: 0.29mOhm @ 50A, 10V Power Dissipation (Max): 2.5W (Ta), 278W (Tc) Vgs(th) (Max) @ Id: 2V @ 1.448mA Supplier Device Package: PG-WHTFN-9-U02 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 17000 pF @ 12 V |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||||
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IQDH29NE2LM5CGSCATMA1 | Infineon Technologies |
Description: OPTIMOS POWER MOSFETS 25 V - 150 Packaging: Cut Tape (CT) Package / Case: 9-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Ta), 789A (Tc) Rds On (Max) @ Id, Vgs: 0.29mOhm @ 50A, 10V Power Dissipation (Max): 2.5W (Ta), 278W (Tc) Vgs(th) (Max) @ Id: 2V @ 1.448mA Supplier Device Package: PG-WHTFN-9-U02 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 17000 pF @ 12 V |
на замовлення 4941 шт: термін постачання 21-31 дні (днів) |
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IPB100N08S207ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 75V 100A TO263-3 Packaging: Bulk Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 6.8mOhm @ 80A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PG-TO263-3-2 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 6897 шт: термін постачання 21-31 дні (днів) |
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CY8C4248LQI-BL543T | Infineon Technologies |
Description: IC MCU 32BIT 256KB FLASH 56QFN Number of I/O: 36 Supplier Device Package: 56-QFN (7x7) Peripherals: Bluetooth, Brown-out Detect/Reset, DMA, LVD, POR, PWM, SmartCard, SmartSense, WDT Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Core Size: 32-Bit Data Converters: A/D 8x12b SAR; D/A 2x7b Core Processor: ARM® Cortex®-M0 Program Memory Type: FLASH Oscillator Type: Internal Operating Temperature: -40°C ~ 85°C (TA) RAM Size: 32K x 8 Program Memory Size: 256KB (256K x 8) Speed: 48MHz Mounting Type: Surface Mount Package / Case: 56-UFQFN Exposed Pad Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||||||
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CY8C4248LQI-BL573T | Infineon Technologies |
Description: IC MCU 32BIT 256KB FLASH 56QFN Packaging: Cut Tape (CT) Package / Case: 56-UFQFN Exposed Pad Mounting Type: Surface Mount Speed: 48MHz Program Memory Size: 256KB (256K x 8) RAM Size: 32K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0 Data Converters: A/D 16x12b SAR; D/A 2xIDAC Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART Peripherals: Bluetooth, Brown-out Detect/Reset, DMA LVD, POR, PWM, SmartCard, SmartSense, WDT Supplier Device Package: 56-QFN (7x7) Number of I/O: 36 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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CY8C4248BZI-L479 | Infineon Technologies |
Description: IC MCU 32BIT 256KB FLSH 124VFBGA DigiKey Programmable: Not Verified Number of I/O: 98 Supplier Device Package: 124-VFBGA (9x9) Peripherals: Brown-out Detect/Reset, CapSense, DMA, LCD, LVD, POR, PWM, SmartSense, WDT Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART, USB Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Core Size: 32-Bit Data Converters: A/D 16x12b; D/A 2x7b, 2x8b Core Processor: ARM® Cortex®-M0 Program Memory Type: FLASH Oscillator Type: Internal Operating Temperature: -40°C ~ 85°C (TA) RAM Size: 32K x 8 Program Memory Size: 256KB (256K x 8) Speed: 48MHz Mounting Type: Surface Mount Package / Case: 124-VFBGA Packaging: Tray |
товару немає в наявності |
Мінімальне замовлення: 520 шт В кошику од. на суму грн. | ||||||||||||||||
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CY8C4248BZA-L489 | Infineon Technologies |
Description: IC MCU 32BIT 256KB FLASH 124VFBG Qualification: AEC-Q100 Number of I/O: 98 Grade: Automotive Supplier Device Package: 124-VFBGA (9x9) Peripherals: Brown-out Detect/Reset, CapSense, DMA, LCD, LVD, POR, PWM, Temp Sensor, WDT Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART, USB Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Core Size: 32-Bit Data Converters: A/D 16x12b SAR; D/A 4x7/8b Core Processor: ARM® Cortex®-M0 Program Memory Type: FLASH Oscillator Type: External, Internal Operating Temperature: -40°C ~ 85°C (TA) RAM Size: 32K x 8 Program Memory Size: 256KB (256K x 8) Speed: 48MHz Mounting Type: Surface Mount Package / Case: 124-VFBGA Packaging: Tray |
товару немає в наявності |
Мінімальне замовлення: 2600 шт В кошику од. на суму грн. | ||||||||||||||||
| CY8C4248FNQ-BL583T | Infineon Technologies |
Description: IC MCU 32BIT 256KB FLASH 76WLCSP Number of I/O: 36 Supplier Device Package: 76-WLCSP (4.04x3.87) Peripherals: Bluetooth, Brown-out Detect/Reset, CapSense, DMA, LCD, LVD, POR, PWM, SmartCard, SmartSense, WDT Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Core Size: 32-Bit Data Converters: A/D 8x12b SAR; D/A 2x7b Core Processor: ARM® Cortex®-M0 Program Memory Type: FLASH Oscillator Type: Internal Operating Temperature: -40°C ~ 105°C (TA) RAM Size: 32K x 8 Program Memory Size: 256KB (256K x 8) Speed: 48MHz Mounting Type: Surface Mount Package / Case: 76-UFBGA, WLCSP Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| CY8C4248FNI-BL593T | Infineon Technologies |
Description: IC MCU 32BIT 256KB FLASH 76WLCSP DigiKey Programmable: Not Verified Number of I/O: 36 Supplier Device Package: 76-WLCSP (4.04x3.87) Peripherals: Bluetooth, Brown-out Detect/Reset, CapSense, DMA, LCD, LVD, POR, PWM, SmartCard, SmartSense, WDT Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Core Size: 32-Bit Single-Core Data Converters: A/D 16x12b; D/A 1x7b, 1x8b Core Processor: ARM® Cortex®-M0 Program Memory Type: FLASH Oscillator Type: Internal Operating Temperature: -40°C ~ 85°C (TA) RAM Size: 32K x 8 Program Memory Size: 256KB (256K x 8) Speed: 48MHz Mounting Type: Surface Mount Package / Case: 76-UFBGA, WLCSP Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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CY8C4248BZS-L489T | Infineon Technologies |
Description: IC MCU 32BIT 256KB FLASH 124VFBG Qualification: AEC-Q100 Number of I/O: 98 Grade: Automotive Supplier Device Package: 124-VFBGA (9x9) Peripherals: Brown-out Detect/Reset, CapSense, DMA, LCD, LVD, POR, PWM, Temp Sensor, WDT Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART, USB Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Core Size: 32-Bit Data Converters: A/D 16x12b SAR; D/A 4x7/8b Core Processor: ARM® Cortex®-M0 Program Memory Type: FLASH Oscillator Type: External, Internal Operating Temperature: -40°C ~ 105°C (TA) RAM Size: 32K x 8 Program Memory Size: 256KB (256K x 8) Speed: 48MHz Mounting Type: Surface Mount Package / Case: 124-VFBGA Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||||||
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CY14B101KA-SP45XI | Infineon Technologies |
Description: IC NVSRAM 1MBIT PARALLEL 48SSOP DigiKey Programmable: Not Verified Memory Organization: 128K x 8 Access Time: 25 ns Memory Interface: Parallel Write Cycle Time - Word, Page: 25ns Supplier Device Package: 48-SSOP Memory Format: NVSRAM Technology: NVSRAM (Non-Volatile SRAM) Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Memory Type: Non-Volatile Memory Size: 1Mbit Mounting Type: Surface Mount Package / Case: 48-BSSOP (0.295", 7.50mm Width) Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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CY14B101LA-SP45XIT | Infineon Technologies |
Description: IC NVSRAM 1MBIT PARALLEL 48SSOP DigiKey Programmable: Not Verified Memory Organization: 128K x 8 Access Time: 45 ns Memory Interface: Parallel Write Cycle Time - Word, Page: 45ns Supplier Device Package: 48-SSOP Memory Format: NVSRAM Technology: NVSRAM (Non-Volatile SRAM) Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Memory Type: Non-Volatile Memory Size: 1Mbit Mounting Type: Surface Mount Package / Case: 48-BSSOP (0.295", 7.50mm Width) Packaging: Tape & Reel (TR) |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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CY14B101LA-SP45XIT | Infineon Technologies |
Description: IC NVSRAM 1MBIT PARALLEL 48SSOP DigiKey Programmable: Not Verified Memory Organization: 128K x 8 Access Time: 45 ns Memory Interface: Parallel Write Cycle Time - Word, Page: 45ns Supplier Device Package: 48-SSOP Memory Format: NVSRAM Technology: NVSRAM (Non-Volatile SRAM) Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Memory Type: Non-Volatile Memory Size: 1Mbit Mounting Type: Surface Mount Package / Case: 48-BSSOP (0.295", 7.50mm Width) Packaging: Cut Tape (CT) |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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CY14B256L-SP45XIT | Infineon Technologies |
Description: IC NVSRAM 256KBIT PAR 48SSOP DigiKey Programmable: Not Verified Memory Organization: 32K x 8 Access Time: 45 ns Memory Interface: Parallel Write Cycle Time - Word, Page: 45ns Supplier Device Package: 48-SSOP Memory Format: NVSRAM Technology: NVSRAM (Non-Volatile SRAM) Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Memory Type: Non-Volatile Memory Size: 256Kbit Mounting Type: Surface Mount Package / Case: 48-BSSOP (0.295", 7.50mm Width) Packaging: Tube |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||||
| TLE4941CBAMA2 | Infineon Technologies |
Description: SPEED SENS Features: Temperature Compensated Packaging: Tape & Box (TB) Package / Case: 2-SIP, SSO-2-53 Output Type: Current Source Polarization: North Pole, South Pole Mounting Type: Through Hole Function: Latch Operating Temperature: -40°C ~ 125°C (TJ) Voltage - Supply: 4.5V ~ 20V Technology: Hall Effect Current - Supply (Max): 16.8mA Supplier Device Package: PG-SSO-2-53 Test Condition: 25°C Grade: Automotive Qualification: AEC-Q100 |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. | |||||||||||||||||
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CY7C1061GE-10BV1XI | Infineon Technologies |
Description: IC SRAM 16MBIT PARALLEL 48VFBGA DigiKey Programmable: Not Verified Memory Organization: 1M x 16 Access Time: 10 ns Memory Interface: Parallel Write Cycle Time - Word, Page: 10ns Supplier Device Package: 48-VFBGA (6x8) Memory Format: SRAM Technology: SRAM - Asynchronous Voltage - Supply: 4.5V ~ 5.5V Operating Temperature: -40°C ~ 85°C (TA) Memory Type: Volatile Memory Size: 16Mbit Mounting Type: Surface Mount Package / Case: 48-VFBGA Packaging: Tray |
товару немає в наявності |
Мінімальне замовлення: 4800 шт В кошику од. на суму грн. | ||||||||||||||||
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CY7C1061G30-10ZXIT | Infineon Technologies |
Description: IC SRAM 16MBIT PARALLEL 48TSOP I DigiKey Programmable: Not Verified Memory Organization: 1M x 16 Access Time: 10 ns Memory Interface: Parallel Write Cycle Time - Word, Page: 10ns Supplier Device Package: 48-TSOP I Memory Format: SRAM Technology: SRAM - Asynchronous Voltage - Supply: 2.2V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Memory Type: Volatile Memory Size: 16Mbit Mounting Type: Surface Mount Package / Case: 48-TFSOP (0.724", 18.40mm Width) Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||||
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CYB06447BZI-BLD53 | Infineon Technologies |
Description: IC MCU 32BIT 1MB FLASH 116BGA DigiKey Programmable: Not Verified Number of I/O: 78 Supplier Device Package: 116-BGA (5.2x6.4) Peripherals: Brown-out Detect/Reset, CapSense, Crypto - AES, DMA, LCD, LVD, POR, PWM, RSA, SHA, Temp Sensor, TRNG, WDT Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, QSPI, SmartCard, SPI, SSP, UART/USART Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V Core Size: 32-Bit Dual-Core Data Converters: A/D 16x10b SAR, 16x12b Sigma-Delta; D/A 2x7b, 1x8/12b Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F Program Memory Type: FLASH Oscillator Type: External, Internal Operating Temperature: -40°C ~ 85°C (TA) RAM Size: 288K x 8 Program Memory Size: 1MB (1M x 8) Speed: 100MHz, 150MHz Mounting Type: Surface Mount Package / Case: 116-WFBGA Packaging: Tray |
товару немає в наявності |
Мінімальне замовлення: 1820 шт В кошику од. на суму грн. | ||||||||||||||||
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SMBT3906SH6327XTSA1 | Infineon Technologies |
Description: TRANS 2PNP 40V 0.2A PG-SOT363-PO Supplier Device Package: PG-SOT363-PO Frequency - Transition: 250MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V Current - Collector Cutoff (Max): 50nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA Voltage - Collector Emitter Breakdown (Max): 40V Current - Collector (Ic) (Max): 200mA Power - Max: 330mW Operating Temperature: 150°C (TJ) Transistor Type: 2 PNP (Dual) Mounting Type: Surface Mount Package / Case: 6-VSSOP, SC-88, SOT-363 Packaging: Bulk |
на замовлення 55269 шт: термін постачання 21-31 дні (днів) |
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IRG7PH50K10D-EPBF | Infineon Technologies |
Description: IGBT 1200V 90A TO-247AD Power - Max: 400 W Current - Collector Pulsed (Icm): 160 A Current - Collector (Ic) (Max): 90 A Gate Charge: 300 nC Test Condition: 600V, 35A, 5Ohm, 15V Switching Energy: 2.3mJ (on), 1.6mJ (off) Td (on/off) @ 25°C: 90ns/340ns Supplier Device Package: TO-247AD Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 35A Reverse Recovery Time (trr): 130 ns Input Type: Standard Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube Voltage - Collector Emitter Breakdown (Max): 1200 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IPP044N03LF2SAKSA1 | Infineon Technologies |
Description: MOSFET N-CH 30V 70A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 53A (Tc) Rds On (Max) @ Id, Vgs: 4.35mOhm @ 30A, 10V Power Dissipation (Max): 3.8W (Ta), 75W (Tc) Vgs(th) (Max) @ Id: 2.35V @ 30µA Supplier Device Package: PG-TO220-3-U05 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 15 V |
на замовлення 417 шт: термін постачання 21-31 дні (днів) |
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EVALBGA123L4TOBO1 | Infineon Technologies |
Description: EVAL BRD ESP32-S3-WROOM-1-N16R8 Supplied Contents: Board(s) Type: Amplifier Frequency: 1.55GHz ~ 1.615GHz For Use With/Related Products: BGA123L4 Packaging: Bulk |
на замовлення 5 шт: термін постачання 21-31 дні (днів) |
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IPU80R1K2P7AKMA1 | Infineon Technologies |
Description: MOSFET N-CH 800V 4.5A TO251-3 Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 500 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V Drain to Source Voltage (Vdss): 800 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: PG-TO251-3 Vgs(th) (Max) @ Id: 3.5V @ 80µA Power Dissipation (Max): 37W (Tc) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 1.7A, 10V Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Packaging: Bulk |
на замовлення 1425 шт: термін постачання 21-31 дні (днів) |
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ISA220280C03LMDSXTMA1 | Infineon Technologies |
Description: ISA220280C03LMDSXTMA1 Operating Temperature: -55°C ~ 150°C (TJ) Configuration: N and P-Channel Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) Supplier Device Package: PG-DSO-8-920 Vgs(th) (Max) @ Id: 2.7V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 13.4nC @ 10V Rds On (Max) @ Id, Vgs: 22mOhm @ 8.4A, 10V, 28mOhm @ 8.1A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 15V Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta), 8.4A (Tc), 6.1A (Ta), 8.1A (Tc) Drain to Source Voltage (Vdss): 30V Power - Max: 1.4W (Ta), 2.5W (Tc) Technology: MOSFET (Metal Oxide) |
на замовлення 500 шт: термін постачання 21-31 дні (днів) |
Мінімальне замовлення: 500 шт В кошику од. на суму грн. | ||||||||||||||||
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ISA220280C03LMDSXTMA1 | Infineon Technologies |
Description: ISA220280C03LMDSXTMA1 Supplier Device Package: PG-DSO-8-920 Vgs(th) (Max) @ Id: 2.7V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 13.4nC @ 10V Rds On (Max) @ Id, Vgs: 22mOhm @ 8.4A, 10V, 28mOhm @ 8.1A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 15V Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta), 8.4A (Tc), 6.1A (Ta), 8.1A (Tc) Drain to Source Voltage (Vdss): 30V Power - Max: 1.4W (Ta), 2.5W (Tc) Packaging: Cut Tape (CT) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: N and P-Channel Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) |
на замовлення 500 шт: термін постачання 21-31 дні (днів) |
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| PEB22522FV2.1 | Infineon Technologies |
Description: IC MULTI BIT RATE INTEGRATED Packaging: Bulk |
на замовлення 28835 шт: термін постачання 21-31 дні (днів) |
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CYT4DNJBNCQ1BZSGS | Infineon Technologies |
Description: TRAVEO-2 CLUST.2.5DGRAPH Packaging: Tray Package / Case: 327-LFBGA Mounting Type: Surface Mount Speed: 100MHz, 320MHz Program Memory Size: 6.19MB (6.19M x 8) RAM Size: 640K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: External, Internal Program Memory Type: FLASH EEPROM Size: 128K x 8 Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F Data Converters: A/D 48x12b SAR Core Size: 32-Bit Tri-Core Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Connectivity: CANbus, Ethernet, I2C, LINbus, SPI, UART/USART Peripherals: DMA, I2S, LVD, Temp Sensor, WDT Supplier Device Package: 327-FBGA (17x17) Number of I/O: 168 |
товару немає в наявності |
Мінімальне замовлення: 900 шт В кошику од. на суму грн. | ||||||||||||||||
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CYT4DNJBNCQ1BZSGST | Infineon Technologies |
Description: TRAVEO-2 CLUST.2.5DGRAPH Packaging: Tape & Reel (TR) Package / Case: 327-LFBGA Mounting Type: Surface Mount Speed: 100MHz, 320MHz Program Memory Size: 6.19MB (6.19M x 8) RAM Size: 640K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: External, Internal Program Memory Type: FLASH EEPROM Size: 128K x 8 Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F Data Converters: A/D 48x12b SAR Core Size: 32-Bit Tri-Core Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Connectivity: CANbus, Ethernet, I2C, LINbus, SPI, UART/USART Peripherals: DMA, I2S, LVD, Temp Sensor, WDT Supplier Device Package: 327-FBGA (17x17) Number of I/O: 168 |
товару немає в наявності |
Мінімальне замовлення: 700 шт В кошику од. на суму грн. | ||||||||||||||||
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D2650N24TVFXPSA1 | Infineon Technologies |
Description: DIODE GEN PURP 2.4KV 2650A Packaging: Tray Package / Case: DO-200AC, K-PUK Mounting Type: Clamp On Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 2650A Operating Temperature - Junction: -40°C ~ 180°C Voltage - DC Reverse (Vr) (Max): 2400 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 2500 A Current - Reverse Leakage @ Vr: 200 mA @ 2400 V |
товару немає в наявності |
Мінімальне замовлення: 4 шт В кошику од. на суму грн. | ||||||||||||||||
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IRG7PH50K10DPBF | Infineon Technologies |
Description: IGBT 1200V 90A TO-247AC Power - Max: 400 W Current - Collector Pulsed (Icm): 160 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 90 A Gate Charge: 300 nC Test Condition: 600V, 35A, 5Ohm, 15V Switching Energy: 2.3mJ (on), 1.6mJ (off) Td (on/off) @ 25°C: 90ns/340ns Supplier Device Package: TO-247AC Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 35A Reverse Recovery Time (trr): 130 ns Input Type: Standard Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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CYAT81685-128AS88 | Infineon Technologies |
Description: PSOC BASED - TRUETOUCH Qualification: AEC-Q100 Grade: Automotive Touchscreen: 2 Wire Capacitive Supplier Device Package: 128-TQFP (14x20) Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V Operating Temperature: -40°C ~ 105°C (TA) Interface: I2C, SPI Mounting Type: Surface Mount Package / Case: 128-LQFP Packaging: Tray |
товару немає в наявності |
Мінімальне замовлення: 720 шт В кошику од. на суму грн. | ||||||||||||||||
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IRSM807-045MH | Infineon Technologies |
Description: IC HALF BRIDGE DRIVER 4A 31PQFN Features: Bootstrap Circuit Packaging: Tray Package / Case: 31-PowerVQFN Mounting Type: Surface Mount Interface: Logic Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Half Bridge Voltage - Supply: 12V ~ 16.5V Rds On (Typ): 1.5Ohm Applications: AC Motors Current - Output / Channel: 4A Current - Peak Output: 35A Technology: UMOS Voltage - Load: 400V (Max) Supplier Device Package: 31-PQFN (8x9) Fault Protection: UVLO Load Type: Inductive |
на замовлення 1300 шт: термін постачання 21-31 дні (днів) |
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S25HS512TDSBHV013 | Infineon Technologies |
Description: IC FLASH 512MBIT SPI/QUAD 24FBGA DigiKey Programmable: Not Verified Memory Organization: 64M x 8 Memory Interface: SPI - Quad I/O, QPI Supplier Device Package: 24-FBGA (6x8) Memory Format: FLASH Clock Frequency: 166 MHz Technology: FLASH - NOR (SLC) Voltage - Supply: 1.7V ~ 2V Operating Temperature: -40°C ~ 105°C (TA) Memory Type: Non-Volatile Memory Size: 512Mbit Mounting Type: Surface Mount Package / Case: 24-VBGA Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||
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S25HS512TDSMHV013 | Infineon Technologies |
Description: IC FLASH 512MBIT SPI/QUAD 16SOIC Memory Organization: 64M x 8 Memory Interface: SPI - Quad I/O, QPI Supplier Device Package: 16-SOIC Memory Format: FLASH Clock Frequency: 166 MHz Technology: FLASH - NOR (SLC) Voltage - Supply: 1.7V ~ 2V Operating Temperature: -40°C ~ 105°C (TA) Memory Type: Non-Volatile Memory Size: 512Mbit Mounting Type: Surface Mount Package / Case: 16-SOIC (0.295", 7.50mm Width) Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 1450 шт В кошику од. на суму грн. | ||||||||||||||||
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S25HS512TDSBHV010 | Infineon Technologies |
Description: IC FLASH 512MBIT SPI/QUAD 24BGA DigiKey Programmable: Not Verified Memory Organization: 64M x 8 Memory Interface: SPI - Quad I/O Supplier Device Package: 24-BGA (8x6) Memory Format: FLASH Clock Frequency: 83 MHz Technology: FLASH - NOR Voltage - Supply: 1.7V ~ 2V Operating Temperature: -40°C ~ 105°C (TA) Memory Type: Non-Volatile Memory Size: 512Mbit Mounting Type: Surface Mount Package / Case: 24-TBGA Packaging: Tray |
товару немає в наявності |
Мінімальне замовлення: 338 шт В кошику од. на суму грн. | ||||||||||||||||
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S25HS512TDSMHV010 | Infineon Technologies |
Description: IC FLASH 512MBIT SPI/QUAD 16SOIC Memory Organization: 64M x 8 Memory Interface: SPI - Quad I/O, QPI Supplier Device Package: 16-SOIC Memory Format: FLASH Clock Frequency: 166 MHz Technology: FLASH - NOR (SLC) Voltage - Supply: 1.7V ~ 2V Operating Temperature: -40°C ~ 105°C (TA) Memory Type: Non-Volatile Memory Size: 512Mbit Mounting Type: Surface Mount Package / Case: 16-SOIC (0.295", 7.50mm Width) Packaging: Tray |
товару немає в наявності |
Мінімальне замовлення: 240 шт В кошику од. на суму грн. | ||||||||||||||||
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S6J332EJTDSE20000 | Infineon Technologies |
Description: TRAVEO-40NM Number of I/O: 150 Supplier Device Package: 176-TEQFP (24x24) Peripherals: DMA, I2S, LVD, POR, PWM, WDT Connectivity: CANbus, CSIO, I2C, LINbus, UART/USART Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V Core Size: 32-Bit Data Converters: A/D 48x12b Core Processor: Arm® Cortex®-R5F EEPROM Size: 112K x 8 Program Memory Type: FLASH Oscillator Type: Internal Operating Temperature: -40°C ~ 105°C (TA) RAM Size: 544K x 8 Program Memory Size: 4.0625MB (4.0625M x 8) Speed: 240MHz Mounting Type: Surface Mount Package / Case: 176-LQFP Exposed Pad Packaging: Tray |
товару немає в наявності |
Мінімальне замовлення: 400 шт В кошику од. на суму грн. | ||||||||||||||||
| CYUSB3ACC-003 | Infineon Technologies |
Description: ALTERA HSMC TO EZ-USB FX3 BOARD Packaging: Bulk For Use With/Related Products: EZ-USB® FX3™ Accessory Type: Interface Board |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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S29JL032J70TFA423 | Infineon Technologies |
Description: IC FLASH 32MBIT CFI 48TSOP Packaging: Tape & Reel (TR) Package / Case: 48-TFSOP (0.724", 18.40mm Width) Mounting Type: Surface Mount Memory Size: 32Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Memory Format: FLASH Supplier Device Package: 48-TSOP I Write Cycle Time - Word, Page: 70ns Memory Interface: CFI Access Time: 70 ns Memory Organization: 4M x 8, 2M x 16 |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||||
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S29JL032J70TFA013 | Infineon Technologies |
Description: IC FLASH 32MBIT CFI 48TSOP Packaging: Tape & Reel (TR) Package / Case: 48-TFSOP (0.724", 18.40mm Width) Mounting Type: Surface Mount Memory Size: 32Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Memory Format: FLASH Supplier Device Package: 48-TSOP I Write Cycle Time - Word, Page: 70ns Memory Interface: CFI Access Time: 70 ns Memory Organization: 4M x 8, 2M x 16 |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||||
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S29JL032J70TFA010 | Infineon Technologies |
Description: IC FLASH 32MBIT CFI 48TSOP Packaging: Tray Package / Case: 48-TFSOP (0.724", 18.40mm Width) Mounting Type: Surface Mount Memory Size: 32Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Memory Format: FLASH Supplier Device Package: 48-TSOP I Write Cycle Time - Word, Page: 70ns Memory Interface: CFI Access Time: 70 ns Memory Organization: 4M x 8, 2M x 16 |
товару немає в наявності |
Мінімальне замовлення: 960 шт В кошику од. на суму грн. | ||||||||||||||||
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S29JL032J70TFA420 | Infineon Technologies |
Description: IC FLASH 32MBIT CFI 48TSOP Packaging: Tray Package / Case: 48-TFSOP (0.724", 18.40mm Width) Mounting Type: Surface Mount Memory Size: 32Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Memory Format: FLASH Supplier Device Package: 48-TSOP I Write Cycle Time - Word, Page: 70ns Memory Interface: CFI Access Time: 70 ns Memory Organization: 4M x 8, 2M x 16 |
товару немає в наявності |
Мінімальне замовлення: 960 шт В кошику од. на суму грн. | ||||||||||||||||
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S29JL032J70TFI220 | Infineon Technologies |
Description: IC FLASH 32MBIT PARALLEL 48TSOP Packaging: Tray Package / Case: 48-TFSOP (0.724", 18.40mm Width) Mounting Type: Surface Mount Memory Size: 32Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Memory Format: FLASH Supplier Device Package: 48-TSOP Write Cycle Time - Word, Page: 70ns Memory Interface: Parallel Access Time: 70 ns Memory Organization: 4M x 8, 2M x 16 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. |
| IPD040N03LF2SATMA1 |
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Виробник: Infineon Technologies
Description: IPD040N03LF2SATMA1
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Power Dissipation (Max): 3W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 30µA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 15 V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 73A (Tc)
Rds On (Max) @ Id, Vgs: 4.05mOhm @ 40A, 10V
Supplier Device Package: PG-TO252-3-34
Description: IPD040N03LF2SATMA1
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Power Dissipation (Max): 3W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 30µA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 15 V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 73A (Tc)
Rds On (Max) @ Id, Vgs: 4.05mOhm @ 40A, 10V
Supplier Device Package: PG-TO252-3-34
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| IPD040N03LF2SATMA1 |
|
Виробник: Infineon Technologies
Description: IPD040N03LF2SATMA1
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 73A (Tc)
Rds On (Max) @ Id, Vgs: 4.05mOhm @ 40A, 10V
Power Dissipation (Max): 3W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 30µA
Supplier Device Package: PG-TO252-3-34
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 15 V
Description: IPD040N03LF2SATMA1
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 73A (Tc)
Rds On (Max) @ Id, Vgs: 4.05mOhm @ 40A, 10V
Power Dissipation (Max): 3W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 30µA
Supplier Device Package: PG-TO252-3-34
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 15 V
на замовлення 1846 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 130.04 грн |
| 10+ | 79.41 грн |
| 100+ | 53.29 грн |
| 500+ | 39.48 грн |
| 1000+ | 36.09 грн |
| S25FL128LAGNFI013 |
|
Виробник: Infineon Technologies
Description: IC FLASH 128MBIT SPI/QUAD 8WSON
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (5x6)
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 128MBIT SPI/QUAD 8WSON
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (5x6)
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4000+ | 142.36 грн |
| S25FL128LAGNFI013 |
|
Виробник: Infineon Technologies
Description: IC FLASH 128MBIT SPI/QUAD 8WSON
Packaging: Cut Tape (CT)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (5x6)
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 128MBIT SPI/QUAD 8WSON
Packaging: Cut Tape (CT)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (5x6)
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 187.13 грн |
| 10+ | 168.82 грн |
| 25+ | 163.92 грн |
| 50+ | 150.37 грн |
| 100+ | 146.88 грн |
| 250+ | 142.28 грн |
| 500+ | 136.54 грн |
| 1000+ | 133.16 грн |
| IMZA65R040M2HXKSA1 |
|
Виробник: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 22.9A, 20V
Power Dissipation (Max): 172W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 4.6mA
Supplier Device Package: PG-TO247-4-8
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 997 pF @ 400 V
Description: SILICON CARBIDE MOSFET
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 22.9A, 20V
Power Dissipation (Max): 172W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 4.6mA
Supplier Device Package: PG-TO247-4-8
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 997 pF @ 400 V
на замовлення 299 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 819.10 грн |
| 30+ | 468.06 грн |
| 60+ | 429.88 грн |
| 120+ | 373.29 грн |
| FF2600UXTR33T2M1BPSA1 |
|
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 3300V AG-XHP2K33
Supplier Device Package: AG-XHP2K33
Vgs(th) (Max) @ Id: 5.55V @ 675mA
Gate Charge (Qg) (Max) @ Vgs: 3750nC @ 15V
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 750A, 15V
Input Capacitance (Ciss) (Max) @ Vds: 152000pF @ 1.8kV
Current - Continuous Drain (Id) @ 25°C: 720A (Tc)
Drain to Source Voltage (Vdss): 3300V (3.3kV)
Technology: Silicon Carbide (SiC)
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Box
Description: MOSFET 2N-CH 3300V AG-XHP2K33
Supplier Device Package: AG-XHP2K33
Vgs(th) (Max) @ Id: 5.55V @ 675mA
Gate Charge (Qg) (Max) @ Vgs: 3750nC @ 15V
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 750A, 15V
Input Capacitance (Ciss) (Max) @ Vds: 152000pF @ 1.8kV
Current - Continuous Drain (Id) @ 25°C: 720A (Tc)
Drain to Source Voltage (Vdss): 3300V (3.3kV)
Technology: Silicon Carbide (SiC)
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Box
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 410820.35 грн |
| F3L200R07W2S5PB95BPSA1 |
|
Виробник: Infineon Technologies
Description: F3L200R07W2S5PB95BPSA1
Input Capacitance (Cies) @ Vce: 14300 pF @ 25 V
Current - Collector Cutoff (Max): 45 µA
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 200 A
IGBT Type: Trench Field Stop
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 1.67V @ 15V, 150A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Three Level Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Box
Description: F3L200R07W2S5PB95BPSA1
Input Capacitance (Cies) @ Vce: 14300 pF @ 25 V
Current - Collector Cutoff (Max): 45 µA
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 200 A
IGBT Type: Trench Field Stop
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 1.67V @ 15V, 150A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Three Level Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Box
на замовлення 15 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 7981.62 грн |
| FF4000UXTR33T2M1BPSA1 |
|
Виробник: Infineon Technologies
Description: MOSFET 2 N-CH 3300V XHP2K17
Supplier Device Package: AG-XHP2K17
Vgs(th) (Max) @ Id: 5.55V @ 450mA
Gate Charge (Qg) (Max) @ Vgs: 2500nC @ 15V
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 500A, 15V
Input Capacitance (Ciss) (Max) @ Vds: 101000pF @ 1800V
Current - Continuous Drain (Id) @ 25°C: 500A (Tc)
Drain to Source Voltage (Vdss): 3300V (3.3kV)
Technology: Silicon Carbide (SiC)
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Description: MOSFET 2 N-CH 3300V XHP2K17
Supplier Device Package: AG-XHP2K17
Vgs(th) (Max) @ Id: 5.55V @ 450mA
Gate Charge (Qg) (Max) @ Vgs: 2500nC @ 15V
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 500A, 15V
Input Capacitance (Ciss) (Max) @ Vds: 101000pF @ 1800V
Current - Continuous Drain (Id) @ 25°C: 500A (Tc)
Drain to Source Voltage (Vdss): 3300V (3.3kV)
Technology: Silicon Carbide (SiC)
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 276877.26 грн |
| TLE98442QXXUMA2 |
|
Виробник: Infineon Technologies
Description: EMBEDDED_POWER
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: LIN, SPI, SSC, UART
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 3V ~ 28V
Program Memory Type: FLASH (64kB)
Core Processor: ARM® Cortex®-M0
Supplier Device Package: PG-VQFN-48-79
Grade: Automotive
Number of I/O: 10
Qualification: AEC-Q100
Description: EMBEDDED_POWER
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: LIN, SPI, SSC, UART
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 3V ~ 28V
Program Memory Type: FLASH (64kB)
Core Processor: ARM® Cortex®-M0
Supplier Device Package: PG-VQFN-48-79
Grade: Automotive
Number of I/O: 10
Qualification: AEC-Q100
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| IRG4BC30FD1PBF |
|
Виробник: Infineon Technologies
Description: IGBT 600V 31A TO-220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 46 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 17A
Supplier Device Package: TO-220AB
Td (on/off) @ 25°C: 22ns/250ns
Switching Energy: 370µJ (on), 1.42mJ (off)
Test Condition: 480V, 17A, 23Ohm, 15V
Gate Charge: 57 nC
Current - Collector (Ic) (Max): 31 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 124 A
Power - Max: 100 W
Description: IGBT 600V 31A TO-220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 46 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 17A
Supplier Device Package: TO-220AB
Td (on/off) @ 25°C: 22ns/250ns
Switching Energy: 370µJ (on), 1.42mJ (off)
Test Condition: 480V, 17A, 23Ohm, 15V
Gate Charge: 57 nC
Current - Collector (Ic) (Max): 31 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 124 A
Power - Max: 100 W
на замовлення 185 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 138+ | 150.46 грн |
| IRG4BC30FD1PBF |
|
Виробник: Infineon Technologies
Description: IGBT 600V 31A TO-220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 46 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 17A
Supplier Device Package: TO-220AB
Td (on/off) @ 25°C: 22ns/250ns
Switching Energy: 370µJ (on), 1.42mJ (off)
Test Condition: 480V, 17A, 23Ohm, 15V
Gate Charge: 57 nC
Current - Collector (Ic) (Max): 31 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 124 A
Power - Max: 100 W
Description: IGBT 600V 31A TO-220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 46 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 17A
Supplier Device Package: TO-220AB
Td (on/off) @ 25°C: 22ns/250ns
Switching Energy: 370µJ (on), 1.42mJ (off)
Test Condition: 480V, 17A, 23Ohm, 15V
Gate Charge: 57 nC
Current - Collector (Ic) (Max): 31 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 124 A
Power - Max: 100 W
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В кошику
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| CYW43022CUBT |
|
Виробник: Infineon Technologies
Description: WI-FI COMBO IOT
Packaging: Tape & Reel (TR)
Package / Case: 106-UFBGA, WLBGA
Mounting Type: Surface Mount
Frequency: 2.4GHz ~ 5GHz
Memory Size: 1.125MB ROM, 388kB SRAM
Type: TxRx + MCU
Operating Temperature: -20°C ~ 70°C
Voltage - Supply: 3.2V ~ 4.6V
Power - Output: 20dBm
Protocol: Bluetooth v5.4
Data Rate (Max): 3Mbps
Supplier Device Package: SG-XFWLB-106
GPIO: 40
RF Family/Standard: Bluetooth, WiFi
Serial Interfaces: I2C, SDIO, SPI, UART
Description: WI-FI COMBO IOT
Packaging: Tape & Reel (TR)
Package / Case: 106-UFBGA, WLBGA
Mounting Type: Surface Mount
Frequency: 2.4GHz ~ 5GHz
Memory Size: 1.125MB ROM, 388kB SRAM
Type: TxRx + MCU
Operating Temperature: -20°C ~ 70°C
Voltage - Supply: 3.2V ~ 4.6V
Power - Output: 20dBm
Protocol: Bluetooth v5.4
Data Rate (Max): 3Mbps
Supplier Device Package: SG-XFWLB-106
GPIO: 40
RF Family/Standard: Bluetooth, WiFi
Serial Interfaces: I2C, SDIO, SPI, UART
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| CYW43022CUBT |
|
Виробник: Infineon Technologies
Description: WI-FI COMBO IOT
Packaging: Cut Tape (CT)
Package / Case: 106-UFBGA, WLBGA
Mounting Type: Surface Mount
Frequency: 2.4GHz ~ 5GHz
Memory Size: 1.125MB ROM, 388kB SRAM
Type: TxRx + MCU
Operating Temperature: -20°C ~ 70°C
Voltage - Supply: 3.2V ~ 4.6V
Power - Output: 20dBm
Protocol: Bluetooth v5.4
Data Rate (Max): 3Mbps
Supplier Device Package: SG-XFWLB-106
GPIO: 40
RF Family/Standard: Bluetooth, WiFi
Serial Interfaces: I2C, SDIO, SPI, UART
Description: WI-FI COMBO IOT
Packaging: Cut Tape (CT)
Package / Case: 106-UFBGA, WLBGA
Mounting Type: Surface Mount
Frequency: 2.4GHz ~ 5GHz
Memory Size: 1.125MB ROM, 388kB SRAM
Type: TxRx + MCU
Operating Temperature: -20°C ~ 70°C
Voltage - Supply: 3.2V ~ 4.6V
Power - Output: 20dBm
Protocol: Bluetooth v5.4
Data Rate (Max): 3Mbps
Supplier Device Package: SG-XFWLB-106
GPIO: 40
RF Family/Standard: Bluetooth, WiFi
Serial Interfaces: I2C, SDIO, SPI, UART
на замовлення 4994 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 638.31 грн |
| 10+ | 477.15 грн |
| 25+ | 442.93 грн |
| 100+ | 380.33 грн |
| 250+ | 369.18 грн |
| ICE5QR1070AZXKLA1 |
|
на замовлення 1956 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 273+ | 81.07 грн |
| CY90911ASPMC-GS-106E1 |
|
Виробник: Infineon Technologies
Description: IC MCU 16BIT 64KB MROM 48LQFP
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: F²MC-16LX
Data Converters: A/D 16x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, LINbus, UART/USART
Peripherals: POR, WDT
Supplier Device Package: 48-LQFP (7x7)
Number of I/O: 36
DigiKey Programmable: Not Verified
Description: IC MCU 16BIT 64KB MROM 48LQFP
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: F²MC-16LX
Data Converters: A/D 16x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, LINbus, UART/USART
Peripherals: POR, WDT
Supplier Device Package: 48-LQFP (7x7)
Number of I/O: 36
DigiKey Programmable: Not Verified
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В кошику
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| IGLT65R110D2ATMA1 |
|
Виробник: Infineon Technologies
Description: GANFET N-CH 650V 15A 16SOP
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 4A
Power Dissipation (Max): 55W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 1.3mA
Supplier Device Package: PG-HDSOP-16-8
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 2.4 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 400 V
Description: GANFET N-CH 650V 15A 16SOP
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 4A
Power Dissipation (Max): 55W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 1.3mA
Supplier Device Package: PG-HDSOP-16-8
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 2.4 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 400 V
товару немає в наявності
Мінімальне замовлення: 1800 шт
В кошику
од. на суму грн.
| IGLT65R110D2ATMA1 |
|
Виробник: Infineon Technologies
Description: GANFET N-CH 650V 15A 16SOP
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 4A
Power Dissipation (Max): 55W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 1.3mA
Supplier Device Package: PG-HDSOP-16-8
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 2.4 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 400 V
Description: GANFET N-CH 650V 15A 16SOP
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 4A
Power Dissipation (Max): 55W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 1.3mA
Supplier Device Package: PG-HDSOP-16-8
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 2.4 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 400 V
на замовлення 691 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 327.48 грн |
| 10+ | 207.99 грн |
| 50+ | 161.92 грн |
| 100+ | 138.03 грн |
| 500+ | 118.64 грн |
| IQDH29NE2LM5CGSCATMA1 |
|
Виробник: Infineon Technologies
Description: OPTIMOS POWER MOSFETS 25 V - 150
Packaging: Tape & Reel (TR)
Package / Case: 9-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Ta), 789A (Tc)
Rds On (Max) @ Id, Vgs: 0.29mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 278W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1.448mA
Supplier Device Package: PG-WHTFN-9-U02
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 17000 pF @ 12 V
Description: OPTIMOS POWER MOSFETS 25 V - 150
Packaging: Tape & Reel (TR)
Package / Case: 9-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Ta), 789A (Tc)
Rds On (Max) @ Id, Vgs: 0.29mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 278W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1.448mA
Supplier Device Package: PG-WHTFN-9-U02
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 17000 pF @ 12 V
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| IQDH29NE2LM5CGSCATMA1 |
|
Виробник: Infineon Technologies
Description: OPTIMOS POWER MOSFETS 25 V - 150
Packaging: Cut Tape (CT)
Package / Case: 9-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Ta), 789A (Tc)
Rds On (Max) @ Id, Vgs: 0.29mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 278W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1.448mA
Supplier Device Package: PG-WHTFN-9-U02
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 17000 pF @ 12 V
Description: OPTIMOS POWER MOSFETS 25 V - 150
Packaging: Cut Tape (CT)
Package / Case: 9-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Ta), 789A (Tc)
Rds On (Max) @ Id, Vgs: 0.29mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 278W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1.448mA
Supplier Device Package: PG-WHTFN-9-U02
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 17000 pF @ 12 V
на замовлення 4941 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 354.44 грн |
| 10+ | 225.10 грн |
| 50+ | 175.41 грн |
| 100+ | 149.58 грн |
| 500+ | 121.88 грн |
| IPB100N08S207ATMA1 |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 75V 100A TO263-3
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 75V 100A TO263-3
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 25 V
Qualification: AEC-Q101
на замовлення 6897 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 115+ | 180.27 грн |
| CY8C4248LQI-BL543T |
Виробник: Infineon Technologies
Description: IC MCU 32BIT 256KB FLASH 56QFN
Number of I/O: 36
Supplier Device Package: 56-QFN (7x7)
Peripherals: Bluetooth, Brown-out Detect/Reset, DMA, LVD, POR, PWM, SmartCard, SmartSense, WDT
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 8x12b SAR; D/A 2x7b
Core Processor: ARM® Cortex®-M0
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 32K x 8
Program Memory Size: 256KB (256K x 8)
Speed: 48MHz
Mounting Type: Surface Mount
Package / Case: 56-UFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Description: IC MCU 32BIT 256KB FLASH 56QFN
Number of I/O: 36
Supplier Device Package: 56-QFN (7x7)
Peripherals: Bluetooth, Brown-out Detect/Reset, DMA, LVD, POR, PWM, SmartCard, SmartSense, WDT
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 8x12b SAR; D/A 2x7b
Core Processor: ARM® Cortex®-M0
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 32K x 8
Program Memory Size: 256KB (256K x 8)
Speed: 48MHz
Mounting Type: Surface Mount
Package / Case: 56-UFQFN Exposed Pad
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| CY8C4248LQI-BL573T |
|
Виробник: Infineon Technologies
Description: IC MCU 32BIT 256KB FLASH 56QFN
Packaging: Cut Tape (CT)
Package / Case: 56-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 16x12b SAR; D/A 2xIDAC
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Bluetooth, Brown-out Detect/Reset, DMA LVD, POR, PWM, SmartCard, SmartSense, WDT
Supplier Device Package: 56-QFN (7x7)
Number of I/O: 36
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 256KB FLASH 56QFN
Packaging: Cut Tape (CT)
Package / Case: 56-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 16x12b SAR; D/A 2xIDAC
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Bluetooth, Brown-out Detect/Reset, DMA LVD, POR, PWM, SmartCard, SmartSense, WDT
Supplier Device Package: 56-QFN (7x7)
Number of I/O: 36
DigiKey Programmable: Not Verified
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В кошику
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| CY8C4248BZI-L479 |
|
Виробник: Infineon Technologies
Description: IC MCU 32BIT 256KB FLSH 124VFBGA
DigiKey Programmable: Not Verified
Number of I/O: 98
Supplier Device Package: 124-VFBGA (9x9)
Peripherals: Brown-out Detect/Reset, CapSense, DMA, LCD, LVD, POR, PWM, SmartSense, WDT
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART, USB
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 16x12b; D/A 2x7b, 2x8b
Core Processor: ARM® Cortex®-M0
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 32K x 8
Program Memory Size: 256KB (256K x 8)
Speed: 48MHz
Mounting Type: Surface Mount
Package / Case: 124-VFBGA
Packaging: Tray
Description: IC MCU 32BIT 256KB FLSH 124VFBGA
DigiKey Programmable: Not Verified
Number of I/O: 98
Supplier Device Package: 124-VFBGA (9x9)
Peripherals: Brown-out Detect/Reset, CapSense, DMA, LCD, LVD, POR, PWM, SmartSense, WDT
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART, USB
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 16x12b; D/A 2x7b, 2x8b
Core Processor: ARM® Cortex®-M0
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 32K x 8
Program Memory Size: 256KB (256K x 8)
Speed: 48MHz
Mounting Type: Surface Mount
Package / Case: 124-VFBGA
Packaging: Tray
товару немає в наявності
Мінімальне замовлення: 520 шт
В кошику
од. на суму грн.
| CY8C4248BZA-L489 |
|
Виробник: Infineon Technologies
Description: IC MCU 32BIT 256KB FLASH 124VFBG
Qualification: AEC-Q100
Number of I/O: 98
Grade: Automotive
Supplier Device Package: 124-VFBGA (9x9)
Peripherals: Brown-out Detect/Reset, CapSense, DMA, LCD, LVD, POR, PWM, Temp Sensor, WDT
Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART, USB
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 16x12b SAR; D/A 4x7/8b
Core Processor: ARM® Cortex®-M0
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 32K x 8
Program Memory Size: 256KB (256K x 8)
Speed: 48MHz
Mounting Type: Surface Mount
Package / Case: 124-VFBGA
Packaging: Tray
Description: IC MCU 32BIT 256KB FLASH 124VFBG
Qualification: AEC-Q100
Number of I/O: 98
Grade: Automotive
Supplier Device Package: 124-VFBGA (9x9)
Peripherals: Brown-out Detect/Reset, CapSense, DMA, LCD, LVD, POR, PWM, Temp Sensor, WDT
Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART, USB
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 16x12b SAR; D/A 4x7/8b
Core Processor: ARM® Cortex®-M0
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 32K x 8
Program Memory Size: 256KB (256K x 8)
Speed: 48MHz
Mounting Type: Surface Mount
Package / Case: 124-VFBGA
Packaging: Tray
товару немає в наявності
Мінімальне замовлення: 2600 шт
В кошику
од. на суму грн.
| CY8C4248FNQ-BL583T |
Виробник: Infineon Technologies
Description: IC MCU 32BIT 256KB FLASH 76WLCSP
Number of I/O: 36
Supplier Device Package: 76-WLCSP (4.04x3.87)
Peripherals: Bluetooth, Brown-out Detect/Reset, CapSense, DMA, LCD, LVD, POR, PWM, SmartCard, SmartSense, WDT
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 8x12b SAR; D/A 2x7b
Core Processor: ARM® Cortex®-M0
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 32K x 8
Program Memory Size: 256KB (256K x 8)
Speed: 48MHz
Mounting Type: Surface Mount
Package / Case: 76-UFBGA, WLCSP
Packaging: Cut Tape (CT)
Description: IC MCU 32BIT 256KB FLASH 76WLCSP
Number of I/O: 36
Supplier Device Package: 76-WLCSP (4.04x3.87)
Peripherals: Bluetooth, Brown-out Detect/Reset, CapSense, DMA, LCD, LVD, POR, PWM, SmartCard, SmartSense, WDT
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 8x12b SAR; D/A 2x7b
Core Processor: ARM® Cortex®-M0
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 32K x 8
Program Memory Size: 256KB (256K x 8)
Speed: 48MHz
Mounting Type: Surface Mount
Package / Case: 76-UFBGA, WLCSP
Packaging: Cut Tape (CT)
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од. на суму грн.
| CY8C4248FNI-BL593T |
|
Виробник: Infineon Technologies
Description: IC MCU 32BIT 256KB FLASH 76WLCSP
DigiKey Programmable: Not Verified
Number of I/O: 36
Supplier Device Package: 76-WLCSP (4.04x3.87)
Peripherals: Bluetooth, Brown-out Detect/Reset, CapSense, DMA, LCD, LVD, POR, PWM, SmartCard, SmartSense, WDT
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 16x12b; D/A 1x7b, 1x8b
Core Processor: ARM® Cortex®-M0
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 32K x 8
Program Memory Size: 256KB (256K x 8)
Speed: 48MHz
Mounting Type: Surface Mount
Package / Case: 76-UFBGA, WLCSP
Packaging: Cut Tape (CT)
Description: IC MCU 32BIT 256KB FLASH 76WLCSP
DigiKey Programmable: Not Verified
Number of I/O: 36
Supplier Device Package: 76-WLCSP (4.04x3.87)
Peripherals: Bluetooth, Brown-out Detect/Reset, CapSense, DMA, LCD, LVD, POR, PWM, SmartCard, SmartSense, WDT
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 16x12b; D/A 1x7b, 1x8b
Core Processor: ARM® Cortex®-M0
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 32K x 8
Program Memory Size: 256KB (256K x 8)
Speed: 48MHz
Mounting Type: Surface Mount
Package / Case: 76-UFBGA, WLCSP
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| CY8C4248BZS-L489T |
|
Виробник: Infineon Technologies
Description: IC MCU 32BIT 256KB FLASH 124VFBG
Qualification: AEC-Q100
Number of I/O: 98
Grade: Automotive
Supplier Device Package: 124-VFBGA (9x9)
Peripherals: Brown-out Detect/Reset, CapSense, DMA, LCD, LVD, POR, PWM, Temp Sensor, WDT
Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART, USB
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 16x12b SAR; D/A 4x7/8b
Core Processor: ARM® Cortex®-M0
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 32K x 8
Program Memory Size: 256KB (256K x 8)
Speed: 48MHz
Mounting Type: Surface Mount
Package / Case: 124-VFBGA
Packaging: Tape & Reel (TR)
Description: IC MCU 32BIT 256KB FLASH 124VFBG
Qualification: AEC-Q100
Number of I/O: 98
Grade: Automotive
Supplier Device Package: 124-VFBGA (9x9)
Peripherals: Brown-out Detect/Reset, CapSense, DMA, LCD, LVD, POR, PWM, Temp Sensor, WDT
Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART, USB
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 16x12b SAR; D/A 4x7/8b
Core Processor: ARM® Cortex®-M0
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 32K x 8
Program Memory Size: 256KB (256K x 8)
Speed: 48MHz
Mounting Type: Surface Mount
Package / Case: 124-VFBGA
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| CY14B101KA-SP45XI |
|
Виробник: Infineon Technologies
Description: IC NVSRAM 1MBIT PARALLEL 48SSOP
DigiKey Programmable: Not Verified
Memory Organization: 128K x 8
Access Time: 25 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 25ns
Supplier Device Package: 48-SSOP
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 1Mbit
Mounting Type: Surface Mount
Package / Case: 48-BSSOP (0.295", 7.50mm Width)
Packaging: Tube
Description: IC NVSRAM 1MBIT PARALLEL 48SSOP
DigiKey Programmable: Not Verified
Memory Organization: 128K x 8
Access Time: 25 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 25ns
Supplier Device Package: 48-SSOP
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 1Mbit
Mounting Type: Surface Mount
Package / Case: 48-BSSOP (0.295", 7.50mm Width)
Packaging: Tube
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од. на суму грн.
| CY14B101LA-SP45XIT |
|
Виробник: Infineon Technologies
Description: IC NVSRAM 1MBIT PARALLEL 48SSOP
DigiKey Programmable: Not Verified
Memory Organization: 128K x 8
Access Time: 45 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 45ns
Supplier Device Package: 48-SSOP
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 1Mbit
Mounting Type: Surface Mount
Package / Case: 48-BSSOP (0.295", 7.50mm Width)
Packaging: Tape & Reel (TR)
Description: IC NVSRAM 1MBIT PARALLEL 48SSOP
DigiKey Programmable: Not Verified
Memory Organization: 128K x 8
Access Time: 45 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 45ns
Supplier Device Package: 48-SSOP
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 1Mbit
Mounting Type: Surface Mount
Package / Case: 48-BSSOP (0.295", 7.50mm Width)
Packaging: Tape & Reel (TR)
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1000+ | 1609.42 грн |
| CY14B101LA-SP45XIT |
|
Виробник: Infineon Technologies
Description: IC NVSRAM 1MBIT PARALLEL 48SSOP
DigiKey Programmable: Not Verified
Memory Organization: 128K x 8
Access Time: 45 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 45ns
Supplier Device Package: 48-SSOP
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 1Mbit
Mounting Type: Surface Mount
Package / Case: 48-BSSOP (0.295", 7.50mm Width)
Packaging: Cut Tape (CT)
Description: IC NVSRAM 1MBIT PARALLEL 48SSOP
DigiKey Programmable: Not Verified
Memory Organization: 128K x 8
Access Time: 45 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 45ns
Supplier Device Package: 48-SSOP
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 1Mbit
Mounting Type: Surface Mount
Package / Case: 48-BSSOP (0.295", 7.50mm Width)
Packaging: Cut Tape (CT)
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2429.53 грн |
| 10+ | 2076.12 грн |
| 25+ | 1979.58 грн |
| 50+ | 1791.95 грн |
| 100+ | 1728.39 грн |
| 250+ | 1647.70 грн |
| CY14B256L-SP45XIT |
|
Виробник: Infineon Technologies
Description: IC NVSRAM 256KBIT PAR 48SSOP
DigiKey Programmable: Not Verified
Memory Organization: 32K x 8
Access Time: 45 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 45ns
Supplier Device Package: 48-SSOP
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 256Kbit
Mounting Type: Surface Mount
Package / Case: 48-BSSOP (0.295", 7.50mm Width)
Packaging: Tube
Description: IC NVSRAM 256KBIT PAR 48SSOP
DigiKey Programmable: Not Verified
Memory Organization: 32K x 8
Access Time: 45 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 45ns
Supplier Device Package: 48-SSOP
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 256Kbit
Mounting Type: Surface Mount
Package / Case: 48-BSSOP (0.295", 7.50mm Width)
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
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| TLE4941CBAMA2 |
Виробник: Infineon Technologies
Description: SPEED SENS
Features: Temperature Compensated
Packaging: Tape & Box (TB)
Package / Case: 2-SIP, SSO-2-53
Output Type: Current Source
Polarization: North Pole, South Pole
Mounting Type: Through Hole
Function: Latch
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Technology: Hall Effect
Current - Supply (Max): 16.8mA
Supplier Device Package: PG-SSO-2-53
Test Condition: 25°C
Grade: Automotive
Qualification: AEC-Q100
Description: SPEED SENS
Features: Temperature Compensated
Packaging: Tape & Box (TB)
Package / Case: 2-SIP, SSO-2-53
Output Type: Current Source
Polarization: North Pole, South Pole
Mounting Type: Through Hole
Function: Latch
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Technology: Hall Effect
Current - Supply (Max): 16.8mA
Supplier Device Package: PG-SSO-2-53
Test Condition: 25°C
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
Мінімальне замовлення: 1500 шт
В кошику
од. на суму грн.
| CY7C1061GE-10BV1XI |
|
Виробник: Infineon Technologies
Description: IC SRAM 16MBIT PARALLEL 48VFBGA
DigiKey Programmable: Not Verified
Memory Organization: 1M x 16
Access Time: 10 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 10ns
Supplier Device Package: 48-VFBGA (6x8)
Memory Format: SRAM
Technology: SRAM - Asynchronous
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 16Mbit
Mounting Type: Surface Mount
Package / Case: 48-VFBGA
Packaging: Tray
Description: IC SRAM 16MBIT PARALLEL 48VFBGA
DigiKey Programmable: Not Verified
Memory Organization: 1M x 16
Access Time: 10 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 10ns
Supplier Device Package: 48-VFBGA (6x8)
Memory Format: SRAM
Technology: SRAM - Asynchronous
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 16Mbit
Mounting Type: Surface Mount
Package / Case: 48-VFBGA
Packaging: Tray
товару немає в наявності
Мінімальне замовлення: 4800 шт
В кошику
од. на суму грн.
| CY7C1061G30-10ZXIT |
|
Виробник: Infineon Technologies
Description: IC SRAM 16MBIT PARALLEL 48TSOP I
DigiKey Programmable: Not Verified
Memory Organization: 1M x 16
Access Time: 10 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 10ns
Supplier Device Package: 48-TSOP I
Memory Format: SRAM
Technology: SRAM - Asynchronous
Voltage - Supply: 2.2V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 16Mbit
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Packaging: Tape & Reel (TR)
Description: IC SRAM 16MBIT PARALLEL 48TSOP I
DigiKey Programmable: Not Verified
Memory Organization: 1M x 16
Access Time: 10 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 10ns
Supplier Device Package: 48-TSOP I
Memory Format: SRAM
Technology: SRAM - Asynchronous
Voltage - Supply: 2.2V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 16Mbit
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| CYB06447BZI-BLD53 |
|
Виробник: Infineon Technologies
Description: IC MCU 32BIT 1MB FLASH 116BGA
DigiKey Programmable: Not Verified
Number of I/O: 78
Supplier Device Package: 116-BGA (5.2x6.4)
Peripherals: Brown-out Detect/Reset, CapSense, Crypto - AES, DMA, LCD, LVD, POR, PWM, RSA, SHA, Temp Sensor, TRNG, WDT
Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, QSPI, SmartCard, SPI, SSP, UART/USART
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Core Size: 32-Bit Dual-Core
Data Converters: A/D 16x10b SAR, 16x12b Sigma-Delta; D/A 2x7b, 1x8/12b
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 288K x 8
Program Memory Size: 1MB (1M x 8)
Speed: 100MHz, 150MHz
Mounting Type: Surface Mount
Package / Case: 116-WFBGA
Packaging: Tray
Description: IC MCU 32BIT 1MB FLASH 116BGA
DigiKey Programmable: Not Verified
Number of I/O: 78
Supplier Device Package: 116-BGA (5.2x6.4)
Peripherals: Brown-out Detect/Reset, CapSense, Crypto - AES, DMA, LCD, LVD, POR, PWM, RSA, SHA, Temp Sensor, TRNG, WDT
Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, QSPI, SmartCard, SPI, SSP, UART/USART
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Core Size: 32-Bit Dual-Core
Data Converters: A/D 16x10b SAR, 16x12b Sigma-Delta; D/A 2x7b, 1x8/12b
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 288K x 8
Program Memory Size: 1MB (1M x 8)
Speed: 100MHz, 150MHz
Mounting Type: Surface Mount
Package / Case: 116-WFBGA
Packaging: Tray
товару немає в наявності
Мінімальне замовлення: 1820 шт
В кошику
од. на суму грн.
| SMBT3906SH6327XTSA1 |
|
Виробник: Infineon Technologies
Description: TRANS 2PNP 40V 0.2A PG-SOT363-PO
Supplier Device Package: PG-SOT363-PO
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Current - Collector Cutoff (Max): 50nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max): 40V
Current - Collector (Ic) (Max): 200mA
Power - Max: 330mW
Operating Temperature: 150°C (TJ)
Transistor Type: 2 PNP (Dual)
Mounting Type: Surface Mount
Package / Case: 6-VSSOP, SC-88, SOT-363
Packaging: Bulk
Description: TRANS 2PNP 40V 0.2A PG-SOT363-PO
Supplier Device Package: PG-SOT363-PO
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Current - Collector Cutoff (Max): 50nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max): 40V
Current - Collector (Ic) (Max): 200mA
Power - Max: 330mW
Operating Temperature: 150°C (TJ)
Transistor Type: 2 PNP (Dual)
Mounting Type: Surface Mount
Package / Case: 6-VSSOP, SC-88, SOT-363
Packaging: Bulk
на замовлення 55269 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3279+ | 6.24 грн |
| IRG7PH50K10D-EPBF |
|
Виробник: Infineon Technologies
Description: IGBT 1200V 90A TO-247AD
Power - Max: 400 W
Current - Collector Pulsed (Icm): 160 A
Current - Collector (Ic) (Max): 90 A
Gate Charge: 300 nC
Test Condition: 600V, 35A, 5Ohm, 15V
Switching Energy: 2.3mJ (on), 1.6mJ (off)
Td (on/off) @ 25°C: 90ns/340ns
Supplier Device Package: TO-247AD
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 35A
Reverse Recovery Time (trr): 130 ns
Input Type: Standard
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Voltage - Collector Emitter Breakdown (Max): 1200 V
Description: IGBT 1200V 90A TO-247AD
Power - Max: 400 W
Current - Collector Pulsed (Icm): 160 A
Current - Collector (Ic) (Max): 90 A
Gate Charge: 300 nC
Test Condition: 600V, 35A, 5Ohm, 15V
Switching Energy: 2.3mJ (on), 1.6mJ (off)
Td (on/off) @ 25°C: 90ns/340ns
Supplier Device Package: TO-247AD
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 35A
Reverse Recovery Time (trr): 130 ns
Input Type: Standard
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Voltage - Collector Emitter Breakdown (Max): 1200 V
товару немає в наявності
В кошику
од. на суму грн.
| IPP044N03LF2SAKSA1 |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 70A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 53A (Tc)
Rds On (Max) @ Id, Vgs: 4.35mOhm @ 30A, 10V
Power Dissipation (Max): 3.8W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 30µA
Supplier Device Package: PG-TO220-3-U05
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 15 V
Description: MOSFET N-CH 30V 70A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 53A (Tc)
Rds On (Max) @ Id, Vgs: 4.35mOhm @ 30A, 10V
Power Dissipation (Max): 3.8W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 30µA
Supplier Device Package: PG-TO220-3-U05
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 15 V
на замовлення 417 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 140.35 грн |
| 10+ | 86.21 грн |
| 100+ | 58.04 грн |
| EVALBGA123L4TOBO1 |
|
Виробник: Infineon Technologies
Description: EVAL BRD ESP32-S3-WROOM-1-N16R8
Supplied Contents: Board(s)
Type: Amplifier
Frequency: 1.55GHz ~ 1.615GHz
For Use With/Related Products: BGA123L4
Packaging: Bulk
Description: EVAL BRD ESP32-S3-WROOM-1-N16R8
Supplied Contents: Board(s)
Type: Amplifier
Frequency: 1.55GHz ~ 1.615GHz
For Use With/Related Products: BGA123L4
Packaging: Bulk
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 11365.84 грн |
| IPU80R1K2P7AKMA1 |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 4.5A TO251-3
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 500 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO251-3
Vgs(th) (Max) @ Id: 3.5V @ 80µA
Power Dissipation (Max): 37W (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 1.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Bulk
Description: MOSFET N-CH 800V 4.5A TO251-3
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 500 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO251-3
Vgs(th) (Max) @ Id: 3.5V @ 80µA
Power Dissipation (Max): 37W (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 1.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Bulk
на замовлення 1425 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 418+ | 49.31 грн |
| ISA220280C03LMDSXTMA1 |
|
Виробник: Infineon Technologies
Description: ISA220280C03LMDSXTMA1
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Supplier Device Package: PG-DSO-8-920
Vgs(th) (Max) @ Id: 2.7V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 13.4nC @ 10V
Rds On (Max) @ Id, Vgs: 22mOhm @ 8.4A, 10V, 28mOhm @ 8.1A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta), 8.4A (Tc), 6.1A (Ta), 8.1A (Tc)
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.4W (Ta), 2.5W (Tc)
Technology: MOSFET (Metal Oxide)
Description: ISA220280C03LMDSXTMA1
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Supplier Device Package: PG-DSO-8-920
Vgs(th) (Max) @ Id: 2.7V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 13.4nC @ 10V
Rds On (Max) @ Id, Vgs: 22mOhm @ 8.4A, 10V, 28mOhm @ 8.1A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta), 8.4A (Tc), 6.1A (Ta), 8.1A (Tc)
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.4W (Ta), 2.5W (Tc)
Technology: MOSFET (Metal Oxide)
на замовлення 500 шт:
термін постачання 21-31 дні (днів)
| ISA220280C03LMDSXTMA1 |
|
Виробник: Infineon Technologies
Description: ISA220280C03LMDSXTMA1
Supplier Device Package: PG-DSO-8-920
Vgs(th) (Max) @ Id: 2.7V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 13.4nC @ 10V
Rds On (Max) @ Id, Vgs: 22mOhm @ 8.4A, 10V, 28mOhm @ 8.1A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta), 8.4A (Tc), 6.1A (Ta), 8.1A (Tc)
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.4W (Ta), 2.5W (Tc)
Packaging: Cut Tape (CT)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Description: ISA220280C03LMDSXTMA1
Supplier Device Package: PG-DSO-8-920
Vgs(th) (Max) @ Id: 2.7V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 13.4nC @ 10V
Rds On (Max) @ Id, Vgs: 22mOhm @ 8.4A, 10V, 28mOhm @ 8.1A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta), 8.4A (Tc), 6.1A (Ta), 8.1A (Tc)
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.4W (Ta), 2.5W (Tc)
Packaging: Cut Tape (CT)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
на замовлення 500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 62.64 грн |
| 10+ | 37.72 грн |
| 100+ | 24.49 грн |
| 500+ | 17.64 грн |
| PEB22522FV2.1 |
на замовлення 28835 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 2547.88 грн |
| CYT4DNJBNCQ1BZSGS |
|
Виробник: Infineon Technologies
Description: TRAVEO-2 CLUST.2.5DGRAPH
Packaging: Tray
Package / Case: 327-LFBGA
Mounting Type: Surface Mount
Speed: 100MHz, 320MHz
Program Memory Size: 6.19MB (6.19M x 8)
RAM Size: 640K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F
Data Converters: A/D 48x12b SAR
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, Ethernet, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, I2S, LVD, Temp Sensor, WDT
Supplier Device Package: 327-FBGA (17x17)
Number of I/O: 168
Description: TRAVEO-2 CLUST.2.5DGRAPH
Packaging: Tray
Package / Case: 327-LFBGA
Mounting Type: Surface Mount
Speed: 100MHz, 320MHz
Program Memory Size: 6.19MB (6.19M x 8)
RAM Size: 640K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F
Data Converters: A/D 48x12b SAR
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, Ethernet, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, I2S, LVD, Temp Sensor, WDT
Supplier Device Package: 327-FBGA (17x17)
Number of I/O: 168
товару немає в наявності
Мінімальне замовлення: 900 шт
В кошику
од. на суму грн.
| CYT4DNJBNCQ1BZSGST |
|
Виробник: Infineon Technologies
Description: TRAVEO-2 CLUST.2.5DGRAPH
Packaging: Tape & Reel (TR)
Package / Case: 327-LFBGA
Mounting Type: Surface Mount
Speed: 100MHz, 320MHz
Program Memory Size: 6.19MB (6.19M x 8)
RAM Size: 640K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F
Data Converters: A/D 48x12b SAR
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, Ethernet, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, I2S, LVD, Temp Sensor, WDT
Supplier Device Package: 327-FBGA (17x17)
Number of I/O: 168
Description: TRAVEO-2 CLUST.2.5DGRAPH
Packaging: Tape & Reel (TR)
Package / Case: 327-LFBGA
Mounting Type: Surface Mount
Speed: 100MHz, 320MHz
Program Memory Size: 6.19MB (6.19M x 8)
RAM Size: 640K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F
Data Converters: A/D 48x12b SAR
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, Ethernet, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, I2S, LVD, Temp Sensor, WDT
Supplier Device Package: 327-FBGA (17x17)
Number of I/O: 168
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Мінімальне замовлення: 700 шт
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| D2650N24TVFXPSA1 |
|
Виробник: Infineon Technologies
Description: DIODE GEN PURP 2.4KV 2650A
Packaging: Tray
Package / Case: DO-200AC, K-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 2650A
Operating Temperature - Junction: -40°C ~ 180°C
Voltage - DC Reverse (Vr) (Max): 2400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 2500 A
Current - Reverse Leakage @ Vr: 200 mA @ 2400 V
Description: DIODE GEN PURP 2.4KV 2650A
Packaging: Tray
Package / Case: DO-200AC, K-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 2650A
Operating Temperature - Junction: -40°C ~ 180°C
Voltage - DC Reverse (Vr) (Max): 2400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 2500 A
Current - Reverse Leakage @ Vr: 200 mA @ 2400 V
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Мінімальне замовлення: 4 шт
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| IRG7PH50K10DPBF |
|
Виробник: Infineon Technologies
Description: IGBT 1200V 90A TO-247AC
Power - Max: 400 W
Current - Collector Pulsed (Icm): 160 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 90 A
Gate Charge: 300 nC
Test Condition: 600V, 35A, 5Ohm, 15V
Switching Energy: 2.3mJ (on), 1.6mJ (off)
Td (on/off) @ 25°C: 90ns/340ns
Supplier Device Package: TO-247AC
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 35A
Reverse Recovery Time (trr): 130 ns
Input Type: Standard
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: IGBT 1200V 90A TO-247AC
Power - Max: 400 W
Current - Collector Pulsed (Icm): 160 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 90 A
Gate Charge: 300 nC
Test Condition: 600V, 35A, 5Ohm, 15V
Switching Energy: 2.3mJ (on), 1.6mJ (off)
Td (on/off) @ 25°C: 90ns/340ns
Supplier Device Package: TO-247AC
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 35A
Reverse Recovery Time (trr): 130 ns
Input Type: Standard
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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| CYAT81685-128AS88 |
|
Виробник: Infineon Technologies
Description: PSOC BASED - TRUETOUCH
Qualification: AEC-Q100
Grade: Automotive
Touchscreen: 2 Wire Capacitive
Supplier Device Package: 128-TQFP (14x20)
Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
Operating Temperature: -40°C ~ 105°C (TA)
Interface: I2C, SPI
Mounting Type: Surface Mount
Package / Case: 128-LQFP
Packaging: Tray
Description: PSOC BASED - TRUETOUCH
Qualification: AEC-Q100
Grade: Automotive
Touchscreen: 2 Wire Capacitive
Supplier Device Package: 128-TQFP (14x20)
Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
Operating Temperature: -40°C ~ 105°C (TA)
Interface: I2C, SPI
Mounting Type: Surface Mount
Package / Case: 128-LQFP
Packaging: Tray
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Мінімальне замовлення: 720 шт
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| IRSM807-045MH |
|
Виробник: Infineon Technologies
Description: IC HALF BRIDGE DRIVER 4A 31PQFN
Features: Bootstrap Circuit
Packaging: Tray
Package / Case: 31-PowerVQFN
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 12V ~ 16.5V
Rds On (Typ): 1.5Ohm
Applications: AC Motors
Current - Output / Channel: 4A
Current - Peak Output: 35A
Technology: UMOS
Voltage - Load: 400V (Max)
Supplier Device Package: 31-PQFN (8x9)
Fault Protection: UVLO
Load Type: Inductive
Description: IC HALF BRIDGE DRIVER 4A 31PQFN
Features: Bootstrap Circuit
Packaging: Tray
Package / Case: 31-PowerVQFN
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 12V ~ 16.5V
Rds On (Typ): 1.5Ohm
Applications: AC Motors
Current - Output / Channel: 4A
Current - Peak Output: 35A
Technology: UMOS
Voltage - Load: 400V (Max)
Supplier Device Package: 31-PQFN (8x9)
Fault Protection: UVLO
Load Type: Inductive
на замовлення 1300 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 333.03 грн |
| 10+ | 214.03 грн |
| 25+ | 185.70 грн |
| 80+ | 148.15 грн |
| 260+ | 142.35 грн |
| S25HS512TDSBHV013 |
|
Виробник: Infineon Technologies
Description: IC FLASH 512MBIT SPI/QUAD 24FBGA
DigiKey Programmable: Not Verified
Memory Organization: 64M x 8
Memory Interface: SPI - Quad I/O, QPI
Supplier Device Package: 24-FBGA (6x8)
Memory Format: FLASH
Clock Frequency: 166 MHz
Technology: FLASH - NOR (SLC)
Voltage - Supply: 1.7V ~ 2V
Operating Temperature: -40°C ~ 105°C (TA)
Memory Type: Non-Volatile
Memory Size: 512Mbit
Mounting Type: Surface Mount
Package / Case: 24-VBGA
Packaging: Tape & Reel (TR)
Description: IC FLASH 512MBIT SPI/QUAD 24FBGA
DigiKey Programmable: Not Verified
Memory Organization: 64M x 8
Memory Interface: SPI - Quad I/O, QPI
Supplier Device Package: 24-FBGA (6x8)
Memory Format: FLASH
Clock Frequency: 166 MHz
Technology: FLASH - NOR (SLC)
Voltage - Supply: 1.7V ~ 2V
Operating Temperature: -40°C ~ 105°C (TA)
Memory Type: Non-Volatile
Memory Size: 512Mbit
Mounting Type: Surface Mount
Package / Case: 24-VBGA
Packaging: Tape & Reel (TR)
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Мінімальне замовлення: 2500 шт
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| S25HS512TDSMHV013 |
|
Виробник: Infineon Technologies
Description: IC FLASH 512MBIT SPI/QUAD 16SOIC
Memory Organization: 64M x 8
Memory Interface: SPI - Quad I/O, QPI
Supplier Device Package: 16-SOIC
Memory Format: FLASH
Clock Frequency: 166 MHz
Technology: FLASH - NOR (SLC)
Voltage - Supply: 1.7V ~ 2V
Operating Temperature: -40°C ~ 105°C (TA)
Memory Type: Non-Volatile
Memory Size: 512Mbit
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Packaging: Tape & Reel (TR)
Description: IC FLASH 512MBIT SPI/QUAD 16SOIC
Memory Organization: 64M x 8
Memory Interface: SPI - Quad I/O, QPI
Supplier Device Package: 16-SOIC
Memory Format: FLASH
Clock Frequency: 166 MHz
Technology: FLASH - NOR (SLC)
Voltage - Supply: 1.7V ~ 2V
Operating Temperature: -40°C ~ 105°C (TA)
Memory Type: Non-Volatile
Memory Size: 512Mbit
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Packaging: Tape & Reel (TR)
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Мінімальне замовлення: 1450 шт
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| S25HS512TDSBHV010 |
|
Виробник: Infineon Technologies
Description: IC FLASH 512MBIT SPI/QUAD 24BGA
DigiKey Programmable: Not Verified
Memory Organization: 64M x 8
Memory Interface: SPI - Quad I/O
Supplier Device Package: 24-BGA (8x6)
Memory Format: FLASH
Clock Frequency: 83 MHz
Technology: FLASH - NOR
Voltage - Supply: 1.7V ~ 2V
Operating Temperature: -40°C ~ 105°C (TA)
Memory Type: Non-Volatile
Memory Size: 512Mbit
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Packaging: Tray
Description: IC FLASH 512MBIT SPI/QUAD 24BGA
DigiKey Programmable: Not Verified
Memory Organization: 64M x 8
Memory Interface: SPI - Quad I/O
Supplier Device Package: 24-BGA (8x6)
Memory Format: FLASH
Clock Frequency: 83 MHz
Technology: FLASH - NOR
Voltage - Supply: 1.7V ~ 2V
Operating Temperature: -40°C ~ 105°C (TA)
Memory Type: Non-Volatile
Memory Size: 512Mbit
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Packaging: Tray
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Мінімальне замовлення: 338 шт
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| S25HS512TDSMHV010 |
|
Виробник: Infineon Technologies
Description: IC FLASH 512MBIT SPI/QUAD 16SOIC
Memory Organization: 64M x 8
Memory Interface: SPI - Quad I/O, QPI
Supplier Device Package: 16-SOIC
Memory Format: FLASH
Clock Frequency: 166 MHz
Technology: FLASH - NOR (SLC)
Voltage - Supply: 1.7V ~ 2V
Operating Temperature: -40°C ~ 105°C (TA)
Memory Type: Non-Volatile
Memory Size: 512Mbit
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Packaging: Tray
Description: IC FLASH 512MBIT SPI/QUAD 16SOIC
Memory Organization: 64M x 8
Memory Interface: SPI - Quad I/O, QPI
Supplier Device Package: 16-SOIC
Memory Format: FLASH
Clock Frequency: 166 MHz
Technology: FLASH - NOR (SLC)
Voltage - Supply: 1.7V ~ 2V
Operating Temperature: -40°C ~ 105°C (TA)
Memory Type: Non-Volatile
Memory Size: 512Mbit
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Packaging: Tray
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Мінімальне замовлення: 240 шт
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| S6J332EJTDSE20000 |
|
Виробник: Infineon Technologies
Description: TRAVEO-40NM
Number of I/O: 150
Supplier Device Package: 176-TEQFP (24x24)
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Connectivity: CANbus, CSIO, I2C, LINbus, UART/USART
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 48x12b
Core Processor: Arm® Cortex®-R5F
EEPROM Size: 112K x 8
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 544K x 8
Program Memory Size: 4.0625MB (4.0625M x 8)
Speed: 240MHz
Mounting Type: Surface Mount
Package / Case: 176-LQFP Exposed Pad
Packaging: Tray
Description: TRAVEO-40NM
Number of I/O: 150
Supplier Device Package: 176-TEQFP (24x24)
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Connectivity: CANbus, CSIO, I2C, LINbus, UART/USART
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 48x12b
Core Processor: Arm® Cortex®-R5F
EEPROM Size: 112K x 8
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 544K x 8
Program Memory Size: 4.0625MB (4.0625M x 8)
Speed: 240MHz
Mounting Type: Surface Mount
Package / Case: 176-LQFP Exposed Pad
Packaging: Tray
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Мінімальне замовлення: 400 шт
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| CYUSB3ACC-003 |
|
Виробник: Infineon Technologies
Description: ALTERA HSMC TO EZ-USB FX3 BOARD
Packaging: Bulk
For Use With/Related Products: EZ-USB® FX3™
Accessory Type: Interface Board
Description: ALTERA HSMC TO EZ-USB FX3 BOARD
Packaging: Bulk
For Use With/Related Products: EZ-USB® FX3™
Accessory Type: Interface Board
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| S29JL032J70TFA423 |
|
Виробник: Infineon Technologies
Description: IC FLASH 32MBIT CFI 48TSOP
Packaging: Tape & Reel (TR)
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Memory Format: FLASH
Supplier Device Package: 48-TSOP I
Write Cycle Time - Word, Page: 70ns
Memory Interface: CFI
Access Time: 70 ns
Memory Organization: 4M x 8, 2M x 16
Description: IC FLASH 32MBIT CFI 48TSOP
Packaging: Tape & Reel (TR)
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Memory Format: FLASH
Supplier Device Package: 48-TSOP I
Write Cycle Time - Word, Page: 70ns
Memory Interface: CFI
Access Time: 70 ns
Memory Organization: 4M x 8, 2M x 16
товару немає в наявності
Мінімальне замовлення: 1000 шт
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| S29JL032J70TFA013 |
|
Виробник: Infineon Technologies
Description: IC FLASH 32MBIT CFI 48TSOP
Packaging: Tape & Reel (TR)
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Memory Format: FLASH
Supplier Device Package: 48-TSOP I
Write Cycle Time - Word, Page: 70ns
Memory Interface: CFI
Access Time: 70 ns
Memory Organization: 4M x 8, 2M x 16
Description: IC FLASH 32MBIT CFI 48TSOP
Packaging: Tape & Reel (TR)
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Memory Format: FLASH
Supplier Device Package: 48-TSOP I
Write Cycle Time - Word, Page: 70ns
Memory Interface: CFI
Access Time: 70 ns
Memory Organization: 4M x 8, 2M x 16
товару немає в наявності
Мінімальне замовлення: 1000 шт
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| S29JL032J70TFA010 |
|
Виробник: Infineon Technologies
Description: IC FLASH 32MBIT CFI 48TSOP
Packaging: Tray
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Memory Format: FLASH
Supplier Device Package: 48-TSOP I
Write Cycle Time - Word, Page: 70ns
Memory Interface: CFI
Access Time: 70 ns
Memory Organization: 4M x 8, 2M x 16
Description: IC FLASH 32MBIT CFI 48TSOP
Packaging: Tray
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Memory Format: FLASH
Supplier Device Package: 48-TSOP I
Write Cycle Time - Word, Page: 70ns
Memory Interface: CFI
Access Time: 70 ns
Memory Organization: 4M x 8, 2M x 16
товару немає в наявності
Мінімальне замовлення: 960 шт
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| S29JL032J70TFA420 |
|
Виробник: Infineon Technologies
Description: IC FLASH 32MBIT CFI 48TSOP
Packaging: Tray
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Memory Format: FLASH
Supplier Device Package: 48-TSOP I
Write Cycle Time - Word, Page: 70ns
Memory Interface: CFI
Access Time: 70 ns
Memory Organization: 4M x 8, 2M x 16
Description: IC FLASH 32MBIT CFI 48TSOP
Packaging: Tray
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Memory Format: FLASH
Supplier Device Package: 48-TSOP I
Write Cycle Time - Word, Page: 70ns
Memory Interface: CFI
Access Time: 70 ns
Memory Organization: 4M x 8, 2M x 16
товару немає в наявності
Мінімальне замовлення: 960 шт
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| S29JL032J70TFI220 |
|
Виробник: Infineon Technologies
Description: IC FLASH 32MBIT PARALLEL 48TSOP
Packaging: Tray
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 48-TSOP
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 4M x 8, 2M x 16
DigiKey Programmable: Not Verified
Description: IC FLASH 32MBIT PARALLEL 48TSOP
Packaging: Tray
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 48-TSOP
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 4M x 8, 2M x 16
DigiKey Programmable: Not Verified
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