| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
| IS42S16800F-5TLI | ISSI |
 Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 200MHz; 5ns; TSOP54 II Kind of package: in-tray; tube Type of integrated circuit: DRAM memory Kind of interface: parallel Kind of memory: SDRAM Mounting: SMD Case: TSOP54 II Operating temperature: -40...85°C Access time: 5ns Supply voltage: 3...3.6V DC Memory: 128Mb DRAM Clock frequency: 200MHz Memory organisation: 2Mx16bitx4 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| IS42S16800F-5TLI-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 200MHz; 5ns; TSOP54 II Kind of package: reel; tape Type of integrated circuit: DRAM memory Kind of interface: parallel Kind of memory: SDRAM Mounting: SMD Case: TSOP54 II Operating temperature: -40...85°C Access time: 5ns Supply voltage: 3...3.6V DC Memory: 128Mb DRAM Clock frequency: 200MHz Memory organisation: 2Mx16bitx4 |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. | |||||||
| IS42S16800F-6BL | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TFBGA54 Kind of package: in-tray; tube Type of integrated circuit: DRAM memory Kind of interface: parallel Kind of memory: SDRAM Mounting: SMD Case: TFBGA54 Operating temperature: 0...70°C Access time: 6ns Supply voltage: 3...3.6V DC Memory: 128Mb DRAM Clock frequency: 166MHz Memory organisation: 2Mx16bitx4 |
товару немає в наявності |
Мінімальне замовлення: 348 шт В кошику од. на суму грн. | |||||||
| IS42S16800F-6BL-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TFBGA54 Mounting: SMD Case: TFBGA54 Type of integrated circuit: DRAM memory Operating temperature: 0...70°C Clock frequency: 166MHz Memory: 128Mb DRAM Kind of interface: parallel Memory organisation: 2Mx16bitx4 Kind of package: reel; tape Kind of memory: SDRAM Supply voltage: 3...3.6V DC Access time: 6ns |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||
| IS61WV51232BLL-10BLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 16MbSRAM; 512kx32bit; 2.4÷3.6V; 10ns; TFBGA90 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 16Mb SRAM Memory organisation: 512kx32bit Operating voltage: 2.4...3.6V Access time: 10ns Case: TFBGA90 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube |
товару немає в наявності |
Мінімальне замовлення: 240 шт В кошику од. на суму грн. | |||||||
| IS61WV51232BLL-10BLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 16MbSRAM; 512kx32bit; 2.4÷3.6V; 10ns; TFBGA90 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 16Mb SRAM Memory organisation: 512kx32bit Operating voltage: 2.4...3.6V Access time: 10ns Case: TFBGA90 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||
 |
IS25WP032D-JBLE | ISSI |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 32MbFLASH; DTR,QPI,SPI; 133MHz; 1.65÷1.95V; SO8 Interface: DTR; QPI; SPI Kind of memory: NOR Memory: 32Mb FLASH Type of integrated circuit: FLASH memory Operating temperature: -40...105°C Operating frequency: 133MHz Kind of interface: serial Case: SO8 Operating voltage: 1.65...1.95V Mounting: SMD |
на замовлення 73 шт: термін постачання 14-30 дні (днів) |
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IS25LP032D-JNLE | ISSI |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 32MbFLASH; DTR,QPI,SPI; 133MHz; 2.3÷3.6V; SOP8 Interface: DTR; QPI; SPI Kind of memory: NOR Memory: 32Mb FLASH Kind of interface: serial Mounting: SMD Case: SOP8 Operating temperature: -40...105°C Operating voltage: 2.3...3.6V Operating frequency: 133MHz Type of integrated circuit: FLASH memory |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
 |
IS25LP032D-JBLE | ISSI |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 32MbFLASH; DTR,QPI,SPI; 133MHz; 2.3÷3.6V; SOP8 Interface: DTR; QPI; SPI Kind of memory: NOR Memory: 32Mb FLASH Type of integrated circuit: FLASH memory Operating temperature: -40...105°C Operating frequency: 133MHz Kind of interface: serial Case: SOP8 Operating voltage: 2.3...3.6V Mounting: SMD |
на замовлення 460 шт: термін постачання 14-30 дні (днів) |
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 |
IS25LP032D-JBLA3 | ISSI |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 32MbFLASH; DTR,QPI,SPI; 133MHz; 2.3÷3.6V; SO8 Interface: DTR; QPI; SPI Kind of memory: NOR Memory: 32Mb FLASH Kind of package: in-tray; tube Kind of interface: serial Mounting: SMD Case: SO8 Operating temperature: -40...125°C Operating voltage: 2.3...3.6V Operating frequency: 133MHz Type of integrated circuit: FLASH memory |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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IS25LP032D-JNLA3 | ISSI |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 32MbFLASH; DTR,QPI,SPI; 133MHz; 2.3÷3.6V; SO8 Interface: DTR; QPI; SPI Kind of memory: NOR Memory: 32Mb FLASH Type of integrated circuit: FLASH memory Operating temperature: -40...125°C Operating frequency: 133MHz Kind of interface: serial Kind of package: in-tray; tube Case: SO8 Operating voltage: 2.3...3.6V Mounting: SMD |
на замовлення 91 шт: термін постачання 14-30 дні (днів) |
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IS25WP032D-JKLE | ISSI |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 32MbFLASH; DTR,QPI,SPI; 133MHz; 1.65÷1.95V Interface: DTR; QPI; SPI Kind of memory: NOR Memory: 32Mb FLASH Dimensions: 6x5mm Kind of interface: serial Mounting: SMD Case: WSON8 Operating temperature: -40...105°C Operating voltage: 1.65...1.95V Operating frequency: 133MHz Type of integrated circuit: FLASH memory |
товару немає в наявності |
Мінімальне замовлення: 570 шт В кошику од. на суму грн. | ||||||
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IS61LF51218A-7.5TQLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; 3.3V; 7.5ns; TQFP100 Case: TQFP100 Mounting: SMD Kind of memory: SRAM Type of integrated circuit: SRAM memory Operating temperature: -40...85°C Access time: 7.5ns Operating voltage: 3.3V Memory: 9Mb SRAM Memory organisation: 512kx18bit Kind of package: in-tray; tube Kind of interface: parallel |
товару немає в наявності |
Мінімальне замовлення: 72 шт В кошику од. на суму грн. | ||||||
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IS61LF51218A-7.5TQLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; 3.3V; 7.5ns; TQFP100 Case: TQFP100 Mounting: SMD Kind of memory: SRAM Type of integrated circuit: SRAM memory Operating temperature: -40...85°C Access time: 7.5ns Operating voltage: 3.3V Memory: 9Mb SRAM Memory organisation: 512kx18bit Kind of package: reel; tape Kind of interface: parallel |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||
| IS61LF51218B-7.5TQLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; 3.3V; 7.5ns; QFP100; parallel Case: QFP100 Mounting: SMD Kind of memory: SRAM Type of integrated circuit: SRAM memory Operating temperature: -40...85°C Access time: 7.5ns Operating voltage: 3.3V Memory: 9Mb SRAM Memory organisation: 512kx18bit Kind of package: in-tray; tube Kind of interface: parallel |
товару немає в наявності |
Мінімальне замовлення: 72 шт В кошику од. на суму грн. | |||||||
| IS61LF51218B-7.5TQLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; 3.3V; 7.5ns; QFP100; parallel Case: QFP100 Mounting: SMD Kind of memory: SRAM Type of integrated circuit: SRAM memory Operating temperature: -40...85°C Access time: 7.5ns Operating voltage: 3.3V Memory: 9Mb SRAM Memory organisation: 512kx18bit Kind of package: reel; tape Kind of interface: parallel |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | |||||||
| IS61LPS51218A-200TQLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; 3.3V; 3.1ns; QFP100; parallel Case: QFP100 Mounting: SMD Kind of memory: SRAM Type of integrated circuit: SRAM memory Operating temperature: -40...85°C Access time: 3.1ns Operating voltage: 3.3V Memory: 9Mb SRAM Memory organisation: 512kx18bit Kind of package: in-tray; tube Kind of interface: parallel |
товару немає в наявності |
Мінімальне замовлення: 72 шт В кошику од. на суму грн. | |||||||
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IS61NLF51218A-7.5TQLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; 3.3V; 7.5ns; TQFP100 Case: TQFP100 Mounting: SMD Kind of memory: SRAM Type of integrated circuit: SRAM memory Operating temperature: -40...85°C Access time: 7.5ns Operating voltage: 3.3V Memory: 9Mb SRAM Memory organisation: 512kx18bit Kind of package: in-tray; tube Kind of interface: parallel |
товару немає в наявності |
Мінімальне замовлення: 72 шт В кошику од. на суму грн. | ||||||
| IS61NLF51218B-7.5TQLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; 3.3V; 7.5ns; QFP100; parallel Case: QFP100 Mounting: SMD Kind of memory: SRAM Type of integrated circuit: SRAM memory Operating temperature: -40...85°C Access time: 7.5ns Operating voltage: 3.3V Memory: 9Mb SRAM Memory organisation: 512kx18bit Kind of package: in-tray; tube Kind of interface: parallel |
товару немає в наявності |
Мінімальне замовлення: 72 шт В кошику од. на суму грн. | |||||||
| IS61NLF51218B-7.5TQLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; 3.3V; 7.5ns; QFP100; parallel Case: QFP100 Mounting: SMD Kind of memory: SRAM Type of integrated circuit: SRAM memory Operating temperature: -40...85°C Access time: 7.5ns Operating voltage: 3.3V Memory: 9Mb SRAM Memory organisation: 512kx18bit Kind of package: reel; tape Kind of interface: parallel |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | |||||||
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IS61NLP51218A-200TQLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 9MbSRAM; 512kx8bit; 3.3V; 200ns; TQFP100; parallel Case: TQFP100 Mounting: SMD Kind of memory: SRAM Type of integrated circuit: SRAM memory Operating temperature: -40...85°C Access time: 200ns Operating voltage: 3.3V Memory: 9Mb SRAM Memory organisation: 512kx8bit Kind of package: in-tray; tube Kind of interface: parallel |
товару немає в наявності |
Мінімальне замовлення: 72 шт В кошику од. на суму грн. | ||||||
| IS43R16160F-6TL | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TSOP66 II Kind of package: in-tray; tube Kind of interface: parallel Mounting: SMD Case: TSOP66 II Operating temperature: 0...70°C Access time: 6ns Supply voltage: 2.5V DC Memory: 256Mb DRAM Clock frequency: 166MHz Memory organisation: 4Mx16bitx4 Kind of memory: DDR1; SDRAM Type of integrated circuit: DRAM memory |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| IS43R16160F-6TLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TSOP66 II Kind of package: in-tray; tube Kind of interface: parallel Mounting: SMD Case: TSOP66 II Operating temperature: -40...85°C Access time: 6ns Supply voltage: 2.5V DC Memory: 256Mb DRAM Clock frequency: 166MHz Memory organisation: 4Mx16bitx4 Kind of memory: DDR1; SDRAM Type of integrated circuit: DRAM memory |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| IS43R16160F-5BL | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 200MHz; 5ns; TFBGA60 Kind of package: in-tray; tube Kind of interface: parallel Mounting: SMD Case: TFBGA60 Operating temperature: 0...70°C Access time: 5ns Supply voltage: 2.5V DC Memory: 256Mb DRAM Clock frequency: 200MHz Memory organisation: 4Mx16bitx4 Kind of memory: DDR1; SDRAM Type of integrated circuit: DRAM memory |
товару немає в наявності |
Мінімальне замовлення: 190 шт В кошику од. на суму грн. | |||||||
| IS43R16160F-5BL-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 200MHz; 5ns; TFBGA60 Mounting: SMD Case: TFBGA60 Type of integrated circuit: DRAM memory Operating temperature: 0...70°C Clock frequency: 200MHz Memory: 256Mb DRAM Kind of interface: parallel Memory organisation: 4Mx16bitx4 Kind of package: reel; tape Kind of memory: DDR1; SDRAM Supply voltage: 2.5V DC Access time: 5ns |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||
| IS43R16160F-5BLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 200MHz; 5ns; TFBGA60 Kind of package: in-tray; tube Kind of interface: parallel Mounting: SMD Case: TFBGA60 Operating temperature: -40...85°C Access time: 5ns Supply voltage: 2.5V DC Memory: 256Mb DRAM Clock frequency: 200MHz Memory organisation: 4Mx16bitx4 Kind of memory: DDR1; SDRAM Type of integrated circuit: DRAM memory |
товару немає в наявності |
Мінімальне замовлення: 190 шт В кошику од. на суму грн. | |||||||
| IS43R16160F-5TL | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 200MHz; 5ns; TSOP66 II Kind of package: in-tray; tube Kind of interface: parallel Mounting: SMD Case: TSOP66 II Operating temperature: 0...70°C Access time: 5ns Supply voltage: 2.5V DC Memory: 256Mb DRAM Clock frequency: 200MHz Memory organisation: 4Mx16bitx4 Kind of memory: DDR1; SDRAM Type of integrated circuit: DRAM memory |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| IS43R16160F-5TL-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 200MHz; 5ns; TSOP66 II Kind of package: reel; tape Kind of interface: parallel Mounting: SMD Case: TSOP66 II Operating temperature: 0...70°C Access time: 5ns Supply voltage: 2.5V DC Memory: 256Mb DRAM Clock frequency: 200MHz Memory organisation: 4Mx16bitx4 Kind of memory: DDR1; SDRAM Type of integrated circuit: DRAM memory |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. | |||||||
| IS43R16160F-5TLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 200MHz; 5ns; TSOP66 II Kind of package: in-tray; tube Kind of interface: parallel Mounting: SMD Case: TSOP66 II Operating temperature: -40...85°C Access time: 5ns Supply voltage: 2.5V DC Memory: 256Mb DRAM Clock frequency: 200MHz Memory organisation: 4Mx16bitx4 Kind of memory: DDR1; SDRAM Type of integrated circuit: DRAM memory |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| IS43R16160F-5TLI-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 200MHz; 5ns; TSOP66 II Kind of package: reel; tape Kind of interface: parallel Mounting: SMD Case: TSOP66 II Operating temperature: -40...85°C Access time: 5ns Supply voltage: 2.5V DC Memory: 256Mb DRAM Clock frequency: 200MHz Memory organisation: 4Mx16bitx4 Kind of memory: DDR1; SDRAM Type of integrated circuit: DRAM memory |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. | |||||||
| IS43R16160F-6BLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TFBGA60 Kind of package: in-tray; tube Kind of interface: parallel Mounting: SMD Case: TFBGA60 Operating temperature: -40...85°C Access time: 6ns Supply voltage: 2.5V DC Memory: 256Mb DRAM Clock frequency: 166MHz Memory organisation: 4Mx16bitx4 Kind of memory: DDR1; SDRAM Type of integrated circuit: DRAM memory |
товару немає в наявності |
Мінімальне замовлення: 190 шт В кошику од. на суму грн. | |||||||
| IS43R16160F-6BLI-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TFBGA60 Kind of package: reel; tape Kind of interface: parallel Mounting: SMD Case: TFBGA60 Operating temperature: -40...85°C Access time: 6ns Supply voltage: 2.5V DC Memory: 256Mb DRAM Clock frequency: 166MHz Memory organisation: 4Mx16bitx4 Kind of memory: DDR1; SDRAM Type of integrated circuit: DRAM memory |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||
| IS43R16320F-5BL | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 200MHz; 5ns; TWBGA60 Kind of package: in-tray; tube Kind of interface: parallel Mounting: SMD Case: TWBGA60 Operating temperature: 0...70°C Access time: 5ns Supply voltage: 2.5V DC Memory: 512Mb DRAM Clock frequency: 200MHz Memory organisation: 8Mx16bitx4 Kind of memory: DDR1; SDRAM Type of integrated circuit: DRAM memory |
товару немає в наявності |
Мінімальне замовлення: 190 шт В кошику од. на суму грн. | |||||||
| IS43R16320F-5BL-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 200MHz; 5ns; TWBGA60 Mounting: SMD Case: TWBGA60 Type of integrated circuit: DRAM memory Operating temperature: 0...70°C Clock frequency: 200MHz Memory: 512Mb DRAM Kind of interface: parallel Memory organisation: 8Mx16bitx4 Kind of package: reel; tape Kind of memory: DDR1; SDRAM Supply voltage: 2.5V DC Access time: 5ns |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||
| IS43R16320F-5BLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 200MHz; 5ns; TWBGA60 Kind of package: in-tray; tube Kind of interface: parallel Mounting: SMD Case: TWBGA60 Operating temperature: -40...85°C Access time: 5ns Supply voltage: 2.5V DC Memory: 512Mb DRAM Clock frequency: 200MHz Memory organisation: 8Mx16bitx4 Kind of memory: DDR1; SDRAM Type of integrated circuit: DRAM memory |
товару немає в наявності |
Мінімальне замовлення: 190 шт В кошику од. на суму грн. | |||||||
| IS43R16320F-5TLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 200MHz; 5ns; TSOP66 II Kind of package: in-tray; tube Kind of interface: parallel Mounting: SMD Case: TSOP66 II Operating temperature: -40...85°C Access time: 5ns Supply voltage: 2.5V DC Memory: 512Mb DRAM Clock frequency: 200MHz Memory organisation: 8Mx16bitx4 Kind of memory: DDR1; SDRAM Type of integrated circuit: DRAM memory |
товару немає в наявності |
Мінімальне замовлення: 108 шт В кошику од. на суму грн. | |||||||
| IS43R16320F-5TLI-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 200MHz; 5ns; TSOP66 II Kind of package: reel; tape Kind of interface: parallel Mounting: SMD Case: TSOP66 II Operating temperature: -40...85°C Access time: 5ns Supply voltage: 2.5V DC Memory: 512Mb DRAM Clock frequency: 200MHz Memory organisation: 8Mx16bitx4 Kind of memory: DDR1; SDRAM Type of integrated circuit: DRAM memory |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. | |||||||
| IS43R16320F-6BL | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TWBGA60 Kind of package: in-tray; tube Kind of interface: parallel Mounting: SMD Case: TWBGA60 Operating temperature: 0...70°C Access time: 6ns Supply voltage: 2.5V DC Memory: 512Mb DRAM Clock frequency: 166MHz Memory organisation: 8Mx16bitx4 Kind of memory: DDR1; SDRAM Type of integrated circuit: DRAM memory |
товару немає в наявності |
Мінімальне замовлення: 190 шт В кошику од. на суму грн. | |||||||
| IS43R16320F-6BLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TWBGA60 Kind of package: in-tray; tube Kind of interface: parallel Mounting: SMD Case: TWBGA60 Operating temperature: -40...85°C Access time: 6ns Supply voltage: 2.5V DC Memory: 512Mb DRAM Clock frequency: 166MHz Memory organisation: 8Mx16bitx4 Kind of memory: DDR1; SDRAM Type of integrated circuit: DRAM memory |
товару немає в наявності |
Мінімальне замовлення: 190 шт В кошику од. на суму грн. | |||||||
| IS43R16320F-6BLI-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TWBGA60 Kind of package: reel; tape Kind of interface: parallel Mounting: SMD Case: TWBGA60 Operating temperature: -40...85°C Access time: 6ns Supply voltage: 2.5V DC Memory: 512Mb DRAM Clock frequency: 166MHz Memory organisation: 8Mx16bitx4 Kind of memory: DDR1; SDRAM Type of integrated circuit: DRAM memory |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||
| IS43R16320F-6TL | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TSOP66 II Kind of package: in-tray; tube Kind of interface: parallel Mounting: SMD Case: TSOP66 II Operating temperature: 0...70°C Access time: 6ns Supply voltage: 2.5V DC Memory: 512Mb DRAM Clock frequency: 166MHz Memory organisation: 8Mx16bitx4 Kind of memory: DDR1; SDRAM Type of integrated circuit: DRAM memory |
товару немає в наявності |
Мінімальне замовлення: 108 шт В кошику од. на суму грн. | |||||||
| IS43R16320F-6TLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TSOP66 II Kind of package: in-tray; tube Kind of interface: parallel Mounting: SMD Case: TSOP66 II Operating temperature: -40...85°C Access time: 6ns Supply voltage: 2.5V DC Memory: 512Mb DRAM Clock frequency: 166MHz Memory organisation: 8Mx16bitx4 Kind of memory: DDR1; SDRAM Type of integrated circuit: DRAM memory |
товару немає в наявності |
Мінімальне замовлення: 108 шт В кошику од. на суму грн. | |||||||
| IS43R16320F-6TLI-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TSOP66 II Kind of package: reel; tape Kind of interface: parallel Mounting: SMD Case: TSOP66 II Operating temperature: -40...85°C Access time: 6ns Supply voltage: 2.5V DC Memory: 512Mb DRAM Clock frequency: 166MHz Memory organisation: 8Mx16bitx4 Kind of memory: DDR1; SDRAM Type of integrated circuit: DRAM memory |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. | |||||||
| IS43R16800E-5TL-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 200MHz; 5ns; TSOP66 II Kind of package: reel; tape Kind of interface: parallel Mounting: SMD Case: TSOP66 II Operating temperature: 0...70°C Access time: 5ns Supply voltage: 2.5V DC Memory: 128Mb DRAM Clock frequency: 200MHz Memory organisation: 2Mx16bitx4 Kind of memory: DDR1; SDRAM Type of integrated circuit: DRAM memory |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. | |||||||
| IS43R16320D-6TLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 32Mx16bit; 166MHz; 6ns; TSOP66 II; tube Kind of package: tube Kind of interface: parallel Mounting: SMD Case: TSOP66 II Operating temperature: -40...85°C Access time: 6ns Supply voltage: 2.5V DC Memory: 512Mb DRAM Clock frequency: 166MHz Memory organisation: 32Mx16bit Kind of memory: SDRAM Type of integrated circuit: DRAM memory |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| IS43R16160D-6TL | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 16Mx32bit; 166MHz; 6ns; TSOP66 II; tube Kind of package: tube Kind of interface: parallel Mounting: SMD Case: TSOP66 II Operating temperature: 0...70°C Access time: 6ns Supply voltage: 2.5V DC Memory: 256Mb DRAM Clock frequency: 166MHz Memory organisation: 16Mx32bit Kind of memory: SDRAM Type of integrated circuit: DRAM memory |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| IS43R16160D-6TLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 16Mx32bit; 166MHz; 6ns; TSOP66 II; tube Kind of package: tube Kind of interface: parallel Mounting: SMD Case: TSOP66 II Operating temperature: -40...85°C Access time: 6ns Supply voltage: 2.5V DC Memory: 256Mb DRAM Clock frequency: 166MHz Memory organisation: 16Mx32bit Kind of memory: SDRAM Type of integrated circuit: DRAM memory |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| IS46TR16128CL-125KBLA1-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 2GbDRAM; 128Mx16bit; 933MHz; 13.75ns; TWBGA96 Supply voltage: 1.35V DC Mounting: SMD Operating temperature: -40...95°C Kind of memory: DDR3L; SDRAM Type of integrated circuit: DRAM memory Kind of package: reel; tape Kind of interface: parallel Case: TWBGA96 Access time: 13.75ns Clock frequency: 933MHz Memory: 2Gb DRAM Memory organisation: 128Mx16bit |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. | |||||||
| IS46TR16128CL-125KBLA2 | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 2GbDRAM; 128Mx16bit; 933MHz; 13.75ns; TWBGA96 Supply voltage: 1.35V DC Mounting: SMD Operating temperature: -40...105°C Kind of memory: DDR3L; SDRAM Type of integrated circuit: DRAM memory Kind of package: in-tray; tube Kind of interface: parallel Case: TWBGA96 Access time: 13.75ns Clock frequency: 933MHz Memory: 2Gb DRAM Memory organisation: 128Mx16bit |
товару немає в наявності |
Мінімальне замовлення: 190 шт В кошику од. на суму грн. | |||||||
| IS43TR16128CL-125KBLI-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 2GbDRAM; 128Mx16bit; 933MHz; 13.75ns; TWBGA96 Supply voltage: 1.35V DC Mounting: SMD Operating temperature: -40...95°C Kind of memory: DDR3L; SDRAM Type of integrated circuit: DRAM memory Kind of package: reel; tape Kind of interface: parallel Case: TWBGA96 Access time: 13.75ns Clock frequency: 933MHz Memory: 2Gb DRAM Memory organisation: 128Mx16bit |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. | |||||||
| IS43TR16128CL-125KBLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 2GbDRAM; 128Mx16bit; 933MHz; 13.75ns; TWBGA96 Supply voltage: 1.35V DC Mounting: SMD Operating temperature: -40...95°C Kind of memory: DDR3L; SDRAM Type of integrated circuit: DRAM memory Kind of package: in-tray; tube Kind of interface: parallel Case: TWBGA96 Access time: 13.75ns Clock frequency: 933MHz Memory: 2Gb DRAM Memory organisation: 128Mx16bit |
товару немає в наявності |
Мінімальне замовлення: 190 шт В кошику од. на суму грн. | |||||||
| IS43TR16128CL-125KBL-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 2GbDRAM; 128Mx16bit; 933MHz; 13.75ns; TWBGA96 Supply voltage: 1.35V DC Mounting: SMD Operating temperature: 0...95°C Kind of memory: DDR3L; SDRAM Type of integrated circuit: DRAM memory Kind of package: reel; tape Kind of interface: parallel Case: TWBGA96 Access time: 13.75ns Clock frequency: 933MHz Memory: 2Gb DRAM Memory organisation: 128Mx16bit |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. | |||||||
 |
IS42S32400F-6TL | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 128MbDRAM; 4Mx32bit; 166MHz; 6ns; TSOP86 II; tube Kind of package: tube Kind of memory: SDRAM Mounting: SMD Supply voltage: 3.3V DC Access time: 6ns Type of integrated circuit: DRAM memory Operating temperature: 0...70°C Clock frequency: 166MHz Memory: 128Mb DRAM Kind of interface: parallel Memory organisation: 4Mx32bit Case: TSOP86 II |
на замовлення 7 шт: термін постачання 14-30 дні (днів) |
|
||||||
| IS43LR16400C-6BLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 166MHz; 6ns; TFBGA60 Type of integrated circuit: DRAM memory Kind of memory: LPDDR; SDRAM Memory: 64Mb DRAM Memory organisation: 1Mx16bitx4 Clock frequency: 166MHz Case: TFBGA60 Mounting: SMD Operating temperature: -40...85°C Supply voltage: 1.7...1.95V DC Access time: 6ns Kind of interface: parallel Kind of package: in-tray; tube |
товару немає в наявності |
Мінімальне замовлення: 300 шт В кошику од. на суму грн. | |||||||
| IS45S16400J-6CTLA1-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 166MHz; 6ns; TSOP54 II Type of integrated circuit: DRAM memory Kind of package: reel; tape Kind of memory: SDRAM Kind of interface: parallel Mounting: SMD Case: TSOP54 II Operating temperature: -40...85°C Access time: 6ns Supply voltage: 3...3.6V DC Memory: 64Mb DRAM Memory organisation: 1Mx16bitx4 Clock frequency: 166MHz |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. | |||||||
| IS45S16400J-7CTLA2-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 143MHz; 7ns; TSOP54 II Type of integrated circuit: DRAM memory Kind of package: reel; tape Kind of memory: SDRAM Kind of interface: parallel Mounting: SMD Case: TSOP54 II Operating temperature: -40...105°C Access time: 7ns Supply voltage: 3...3.6V DC Memory: 64Mb DRAM Memory organisation: 1Mx16bitx4 Clock frequency: 143MHz |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. | |||||||
| IS25LP032D-JTLA3-TR | ISSI |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 32MbFLASH; DTR,QPI,SPI; 133MHz; 2.3÷3.6V; USON8 Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 32Mb FLASH Interface: DTR; QPI; SPI Operating frequency: 133MHz Operating voltage: 2.3...3.6V Case: USON8 Kind of interface: serial Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | |||||||
| IS25LP512MH-RHLE-TR | ISSI |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 512MbFLASH; DTR,QPI,SPI; 133MHz; 2.7÷3.6V Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 512Mb FLASH Interface: DTR; QPI; SPI Operating frequency: 133MHz Operating voltage: 2.7...3.6V Case: TFBGA24 Kind of interface: serial Mounting: SMD Operating temperature: -40...105°C Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||
| IS46TR16640ED-15HBLA1 | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 1GbDRAM; 64Mx16bit; 13.5ns; TWBGA96; -40÷95°C Type of integrated circuit: DRAM memory Kind of memory: DDR3; SDRAM Memory: 1Gb DRAM Memory organisation: 64Mx16bit Case: TWBGA96 Mounting: SMD Operating temperature: -40...95°C Supply voltage: 1.5V DC Kind of package: in-tray; tube Access time: 13.5ns Kind of interface: parallel |
товару немає в наявності |
Мінімальне замовлення: 190 шт В кошику од. на суму грн. | |||||||
| IS46TR16640ED-15HBLA2 | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 1GbDRAM; 64Mx16bit; 13.5ns; TWBGA96; -40÷105°C Type of integrated circuit: DRAM memory Kind of memory: DDR3; SDRAM Memory: 1Gb DRAM Memory organisation: 64Mx16bit Case: TWBGA96 Mounting: SMD Operating temperature: -40...105°C Supply voltage: 1.5V DC Kind of package: in-tray; tube Access time: 13.5ns Kind of interface: parallel |
товару немає в наявності |
Мінімальне замовлення: 190 шт В кошику од. на суму грн. |
| IS42S16800F-5TLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 200MHz; 5ns; TSOP54 II
Kind of package: in-tray; tube
Type of integrated circuit: DRAM memory
Kind of interface: parallel
Kind of memory: SDRAM
Mounting: SMD
Case: TSOP54 II
Operating temperature: -40...85°C
Access time: 5ns
Supply voltage: 3...3.6V DC
Memory: 128Mb DRAM
Clock frequency: 200MHz
Memory organisation: 2Mx16bitx4
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 200MHz; 5ns; TSOP54 II
Kind of package: in-tray; tube
Type of integrated circuit: DRAM memory
Kind of interface: parallel
Kind of memory: SDRAM
Mounting: SMD
Case: TSOP54 II
Operating temperature: -40...85°C
Access time: 5ns
Supply voltage: 3...3.6V DC
Memory: 128Mb DRAM
Clock frequency: 200MHz
Memory organisation: 2Mx16bitx4
товару немає в наявності
В кошику
од. на суму грн.
| IS42S16800F-5TLI-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 200MHz; 5ns; TSOP54 II
Kind of package: reel; tape
Type of integrated circuit: DRAM memory
Kind of interface: parallel
Kind of memory: SDRAM
Mounting: SMD
Case: TSOP54 II
Operating temperature: -40...85°C
Access time: 5ns
Supply voltage: 3...3.6V DC
Memory: 128Mb DRAM
Clock frequency: 200MHz
Memory organisation: 2Mx16bitx4
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 200MHz; 5ns; TSOP54 II
Kind of package: reel; tape
Type of integrated circuit: DRAM memory
Kind of interface: parallel
Kind of memory: SDRAM
Mounting: SMD
Case: TSOP54 II
Operating temperature: -40...85°C
Access time: 5ns
Supply voltage: 3...3.6V DC
Memory: 128Mb DRAM
Clock frequency: 200MHz
Memory organisation: 2Mx16bitx4
товару немає в наявності
Мінімальне замовлення: 1500 шт
В кошику
од. на суму грн.
| IS42S16800F-6BL |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TFBGA54
Kind of package: in-tray; tube
Type of integrated circuit: DRAM memory
Kind of interface: parallel
Kind of memory: SDRAM
Mounting: SMD
Case: TFBGA54
Operating temperature: 0...70°C
Access time: 6ns
Supply voltage: 3...3.6V DC
Memory: 128Mb DRAM
Clock frequency: 166MHz
Memory organisation: 2Mx16bitx4
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TFBGA54
Kind of package: in-tray; tube
Type of integrated circuit: DRAM memory
Kind of interface: parallel
Kind of memory: SDRAM
Mounting: SMD
Case: TFBGA54
Operating temperature: 0...70°C
Access time: 6ns
Supply voltage: 3...3.6V DC
Memory: 128Mb DRAM
Clock frequency: 166MHz
Memory organisation: 2Mx16bitx4
товару немає в наявності
Мінімальне замовлення: 348 шт
В кошику
од. на суму грн.
| IS42S16800F-6BL-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TFBGA54
Mounting: SMD
Case: TFBGA54
Type of integrated circuit: DRAM memory
Operating temperature: 0...70°C
Clock frequency: 166MHz
Memory: 128Mb DRAM
Kind of interface: parallel
Memory organisation: 2Mx16bitx4
Kind of package: reel; tape
Kind of memory: SDRAM
Supply voltage: 3...3.6V DC
Access time: 6ns
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TFBGA54
Mounting: SMD
Case: TFBGA54
Type of integrated circuit: DRAM memory
Operating temperature: 0...70°C
Clock frequency: 166MHz
Memory: 128Mb DRAM
Kind of interface: parallel
Memory organisation: 2Mx16bitx4
Kind of package: reel; tape
Kind of memory: SDRAM
Supply voltage: 3...3.6V DC
Access time: 6ns
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| IS61WV51232BLL-10BLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 512kx32bit; 2.4÷3.6V; 10ns; TFBGA90
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 512kx32bit
Operating voltage: 2.4...3.6V
Access time: 10ns
Case: TFBGA90
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 512kx32bit; 2.4÷3.6V; 10ns; TFBGA90
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 512kx32bit
Operating voltage: 2.4...3.6V
Access time: 10ns
Case: TFBGA90
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
товару немає в наявності
Мінімальне замовлення: 240 шт
В кошику
од. на суму грн.
| IS61WV51232BLL-10BLI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 512kx32bit; 2.4÷3.6V; 10ns; TFBGA90
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 512kx32bit
Operating voltage: 2.4...3.6V
Access time: 10ns
Case: TFBGA90
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 512kx32bit; 2.4÷3.6V; 10ns; TFBGA90
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 512kx32bit
Operating voltage: 2.4...3.6V
Access time: 10ns
Case: TFBGA90
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| IS25WP032D-JBLE |
|
Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 32MbFLASH; DTR,QPI,SPI; 133MHz; 1.65÷1.95V; SO8
Interface: DTR; QPI; SPI
Kind of memory: NOR
Memory: 32Mb FLASH
Type of integrated circuit: FLASH memory
Operating temperature: -40...105°C
Operating frequency: 133MHz
Kind of interface: serial
Case: SO8
Operating voltage: 1.65...1.95V
Mounting: SMD
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 32MbFLASH; DTR,QPI,SPI; 133MHz; 1.65÷1.95V; SO8
Interface: DTR; QPI; SPI
Kind of memory: NOR
Memory: 32Mb FLASH
Type of integrated circuit: FLASH memory
Operating temperature: -40...105°C
Operating frequency: 133MHz
Kind of interface: serial
Case: SO8
Operating voltage: 1.65...1.95V
Mounting: SMD
на замовлення 73 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 124.11 грн |
| 5+ | 101.15 грн |
| 25+ | 86.23 грн |
| IS25LP032D-JNLE |
|
Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 32MbFLASH; DTR,QPI,SPI; 133MHz; 2.3÷3.6V; SOP8
Interface: DTR; QPI; SPI
Kind of memory: NOR
Memory: 32Mb FLASH
Kind of interface: serial
Mounting: SMD
Case: SOP8
Operating temperature: -40...105°C
Operating voltage: 2.3...3.6V
Operating frequency: 133MHz
Type of integrated circuit: FLASH memory
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 32MbFLASH; DTR,QPI,SPI; 133MHz; 2.3÷3.6V; SOP8
Interface: DTR; QPI; SPI
Kind of memory: NOR
Memory: 32Mb FLASH
Kind of interface: serial
Mounting: SMD
Case: SOP8
Operating temperature: -40...105°C
Operating voltage: 2.3...3.6V
Operating frequency: 133MHz
Type of integrated circuit: FLASH memory
товару немає в наявності
В кошику
од. на суму грн.
| IS25LP032D-JBLE |
|
Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 32MbFLASH; DTR,QPI,SPI; 133MHz; 2.3÷3.6V; SOP8
Interface: DTR; QPI; SPI
Kind of memory: NOR
Memory: 32Mb FLASH
Type of integrated circuit: FLASH memory
Operating temperature: -40...105°C
Operating frequency: 133MHz
Kind of interface: serial
Case: SOP8
Operating voltage: 2.3...3.6V
Mounting: SMD
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 32MbFLASH; DTR,QPI,SPI; 133MHz; 2.3÷3.6V; SOP8
Interface: DTR; QPI; SPI
Kind of memory: NOR
Memory: 32Mb FLASH
Type of integrated circuit: FLASH memory
Operating temperature: -40...105°C
Operating frequency: 133MHz
Kind of interface: serial
Case: SOP8
Operating voltage: 2.3...3.6V
Mounting: SMD
на замовлення 460 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 94.65 грн |
| IS25LP032D-JBLA3 |
|
Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 32MbFLASH; DTR,QPI,SPI; 133MHz; 2.3÷3.6V; SO8
Interface: DTR; QPI; SPI
Kind of memory: NOR
Memory: 32Mb FLASH
Kind of package: in-tray; tube
Kind of interface: serial
Mounting: SMD
Case: SO8
Operating temperature: -40...125°C
Operating voltage: 2.3...3.6V
Operating frequency: 133MHz
Type of integrated circuit: FLASH memory
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 32MbFLASH; DTR,QPI,SPI; 133MHz; 2.3÷3.6V; SO8
Interface: DTR; QPI; SPI
Kind of memory: NOR
Memory: 32Mb FLASH
Kind of package: in-tray; tube
Kind of interface: serial
Mounting: SMD
Case: SO8
Operating temperature: -40...125°C
Operating voltage: 2.3...3.6V
Operating frequency: 133MHz
Type of integrated circuit: FLASH memory
товару немає в наявності
В кошику
од. на суму грн.
| IS25LP032D-JNLA3 |
|
Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 32MbFLASH; DTR,QPI,SPI; 133MHz; 2.3÷3.6V; SO8
Interface: DTR; QPI; SPI
Kind of memory: NOR
Memory: 32Mb FLASH
Type of integrated circuit: FLASH memory
Operating temperature: -40...125°C
Operating frequency: 133MHz
Kind of interface: serial
Kind of package: in-tray; tube
Case: SO8
Operating voltage: 2.3...3.6V
Mounting: SMD
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 32MbFLASH; DTR,QPI,SPI; 133MHz; 2.3÷3.6V; SO8
Interface: DTR; QPI; SPI
Kind of memory: NOR
Memory: 32Mb FLASH
Type of integrated circuit: FLASH memory
Operating temperature: -40...125°C
Operating frequency: 133MHz
Kind of interface: serial
Kind of package: in-tray; tube
Case: SO8
Operating voltage: 2.3...3.6V
Mounting: SMD
на замовлення 91 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 116.97 грн |
| 10+ | 96.18 грн |
| IS25WP032D-JKLE |
|
Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 32MbFLASH; DTR,QPI,SPI; 133MHz; 1.65÷1.95V
Interface: DTR; QPI; SPI
Kind of memory: NOR
Memory: 32Mb FLASH
Dimensions: 6x5mm
Kind of interface: serial
Mounting: SMD
Case: WSON8
Operating temperature: -40...105°C
Operating voltage: 1.65...1.95V
Operating frequency: 133MHz
Type of integrated circuit: FLASH memory
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 32MbFLASH; DTR,QPI,SPI; 133MHz; 1.65÷1.95V
Interface: DTR; QPI; SPI
Kind of memory: NOR
Memory: 32Mb FLASH
Dimensions: 6x5mm
Kind of interface: serial
Mounting: SMD
Case: WSON8
Operating temperature: -40...105°C
Operating voltage: 1.65...1.95V
Operating frequency: 133MHz
Type of integrated circuit: FLASH memory
товару немає в наявності
Мінімальне замовлення: 570 шт
В кошику
од. на суму грн.
| IS61LF51218A-7.5TQLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; 3.3V; 7.5ns; TQFP100
Case: TQFP100
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Access time: 7.5ns
Operating voltage: 3.3V
Memory: 9Mb SRAM
Memory organisation: 512kx18bit
Kind of package: in-tray; tube
Kind of interface: parallel
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; 3.3V; 7.5ns; TQFP100
Case: TQFP100
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Access time: 7.5ns
Operating voltage: 3.3V
Memory: 9Mb SRAM
Memory organisation: 512kx18bit
Kind of package: in-tray; tube
Kind of interface: parallel
товару немає в наявності
Мінімальне замовлення: 72 шт
В кошику
од. на суму грн.
| IS61LF51218A-7.5TQLI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; 3.3V; 7.5ns; TQFP100
Case: TQFP100
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Access time: 7.5ns
Operating voltage: 3.3V
Memory: 9Mb SRAM
Memory organisation: 512kx18bit
Kind of package: reel; tape
Kind of interface: parallel
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; 3.3V; 7.5ns; TQFP100
Case: TQFP100
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Access time: 7.5ns
Operating voltage: 3.3V
Memory: 9Mb SRAM
Memory organisation: 512kx18bit
Kind of package: reel; tape
Kind of interface: parallel
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.
| IS61LF51218B-7.5TQLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; 3.3V; 7.5ns; QFP100; parallel
Case: QFP100
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Access time: 7.5ns
Operating voltage: 3.3V
Memory: 9Mb SRAM
Memory organisation: 512kx18bit
Kind of package: in-tray; tube
Kind of interface: parallel
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; 3.3V; 7.5ns; QFP100; parallel
Case: QFP100
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Access time: 7.5ns
Operating voltage: 3.3V
Memory: 9Mb SRAM
Memory organisation: 512kx18bit
Kind of package: in-tray; tube
Kind of interface: parallel
товару немає в наявності
Мінімальне замовлення: 72 шт
В кошику
од. на суму грн.
| IS61LF51218B-7.5TQLI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; 3.3V; 7.5ns; QFP100; parallel
Case: QFP100
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Access time: 7.5ns
Operating voltage: 3.3V
Memory: 9Mb SRAM
Memory organisation: 512kx18bit
Kind of package: reel; tape
Kind of interface: parallel
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; 3.3V; 7.5ns; QFP100; parallel
Case: QFP100
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Access time: 7.5ns
Operating voltage: 3.3V
Memory: 9Mb SRAM
Memory organisation: 512kx18bit
Kind of package: reel; tape
Kind of interface: parallel
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.
| IS61LPS51218A-200TQLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; 3.3V; 3.1ns; QFP100; parallel
Case: QFP100
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Access time: 3.1ns
Operating voltage: 3.3V
Memory: 9Mb SRAM
Memory organisation: 512kx18bit
Kind of package: in-tray; tube
Kind of interface: parallel
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; 3.3V; 3.1ns; QFP100; parallel
Case: QFP100
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Access time: 3.1ns
Operating voltage: 3.3V
Memory: 9Mb SRAM
Memory organisation: 512kx18bit
Kind of package: in-tray; tube
Kind of interface: parallel
товару немає в наявності
Мінімальне замовлення: 72 шт
В кошику
од. на суму грн.
| IS61NLF51218A-7.5TQLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; 3.3V; 7.5ns; TQFP100
Case: TQFP100
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Access time: 7.5ns
Operating voltage: 3.3V
Memory: 9Mb SRAM
Memory organisation: 512kx18bit
Kind of package: in-tray; tube
Kind of interface: parallel
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; 3.3V; 7.5ns; TQFP100
Case: TQFP100
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Access time: 7.5ns
Operating voltage: 3.3V
Memory: 9Mb SRAM
Memory organisation: 512kx18bit
Kind of package: in-tray; tube
Kind of interface: parallel
товару немає в наявності
Мінімальне замовлення: 72 шт
В кошику
од. на суму грн.
| IS61NLF51218B-7.5TQLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; 3.3V; 7.5ns; QFP100; parallel
Case: QFP100
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Access time: 7.5ns
Operating voltage: 3.3V
Memory: 9Mb SRAM
Memory organisation: 512kx18bit
Kind of package: in-tray; tube
Kind of interface: parallel
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; 3.3V; 7.5ns; QFP100; parallel
Case: QFP100
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Access time: 7.5ns
Operating voltage: 3.3V
Memory: 9Mb SRAM
Memory organisation: 512kx18bit
Kind of package: in-tray; tube
Kind of interface: parallel
товару немає в наявності
Мінімальне замовлення: 72 шт
В кошику
од. на суму грн.
| IS61NLF51218B-7.5TQLI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; 3.3V; 7.5ns; QFP100; parallel
Case: QFP100
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Access time: 7.5ns
Operating voltage: 3.3V
Memory: 9Mb SRAM
Memory organisation: 512kx18bit
Kind of package: reel; tape
Kind of interface: parallel
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; 3.3V; 7.5ns; QFP100; parallel
Case: QFP100
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Access time: 7.5ns
Operating voltage: 3.3V
Memory: 9Mb SRAM
Memory organisation: 512kx18bit
Kind of package: reel; tape
Kind of interface: parallel
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.
| IS61NLP51218A-200TQLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 512kx8bit; 3.3V; 200ns; TQFP100; parallel
Case: TQFP100
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Access time: 200ns
Operating voltage: 3.3V
Memory: 9Mb SRAM
Memory organisation: 512kx8bit
Kind of package: in-tray; tube
Kind of interface: parallel
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 512kx8bit; 3.3V; 200ns; TQFP100; parallel
Case: TQFP100
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Access time: 200ns
Operating voltage: 3.3V
Memory: 9Mb SRAM
Memory organisation: 512kx8bit
Kind of package: in-tray; tube
Kind of interface: parallel
товару немає в наявності
Мінімальне замовлення: 72 шт
В кошику
од. на суму грн.
| IS43R16160F-6TL |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TSOP66 II
Kind of package: in-tray; tube
Kind of interface: parallel
Mounting: SMD
Case: TSOP66 II
Operating temperature: 0...70°C
Access time: 6ns
Supply voltage: 2.5V DC
Memory: 256Mb DRAM
Clock frequency: 166MHz
Memory organisation: 4Mx16bitx4
Kind of memory: DDR1; SDRAM
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TSOP66 II
Kind of package: in-tray; tube
Kind of interface: parallel
Mounting: SMD
Case: TSOP66 II
Operating temperature: 0...70°C
Access time: 6ns
Supply voltage: 2.5V DC
Memory: 256Mb DRAM
Clock frequency: 166MHz
Memory organisation: 4Mx16bitx4
Kind of memory: DDR1; SDRAM
Type of integrated circuit: DRAM memory
товару немає в наявності
В кошику
од. на суму грн.
| IS43R16160F-6TLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TSOP66 II
Kind of package: in-tray; tube
Kind of interface: parallel
Mounting: SMD
Case: TSOP66 II
Operating temperature: -40...85°C
Access time: 6ns
Supply voltage: 2.5V DC
Memory: 256Mb DRAM
Clock frequency: 166MHz
Memory organisation: 4Mx16bitx4
Kind of memory: DDR1; SDRAM
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TSOP66 II
Kind of package: in-tray; tube
Kind of interface: parallel
Mounting: SMD
Case: TSOP66 II
Operating temperature: -40...85°C
Access time: 6ns
Supply voltage: 2.5V DC
Memory: 256Mb DRAM
Clock frequency: 166MHz
Memory organisation: 4Mx16bitx4
Kind of memory: DDR1; SDRAM
Type of integrated circuit: DRAM memory
товару немає в наявності
В кошику
од. на суму грн.
| IS43R16160F-5BL |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 200MHz; 5ns; TFBGA60
Kind of package: in-tray; tube
Kind of interface: parallel
Mounting: SMD
Case: TFBGA60
Operating temperature: 0...70°C
Access time: 5ns
Supply voltage: 2.5V DC
Memory: 256Mb DRAM
Clock frequency: 200MHz
Memory organisation: 4Mx16bitx4
Kind of memory: DDR1; SDRAM
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 200MHz; 5ns; TFBGA60
Kind of package: in-tray; tube
Kind of interface: parallel
Mounting: SMD
Case: TFBGA60
Operating temperature: 0...70°C
Access time: 5ns
Supply voltage: 2.5V DC
Memory: 256Mb DRAM
Clock frequency: 200MHz
Memory organisation: 4Mx16bitx4
Kind of memory: DDR1; SDRAM
Type of integrated circuit: DRAM memory
товару немає в наявності
Мінімальне замовлення: 190 шт
В кошику
од. на суму грн.
| IS43R16160F-5BL-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 200MHz; 5ns; TFBGA60
Mounting: SMD
Case: TFBGA60
Type of integrated circuit: DRAM memory
Operating temperature: 0...70°C
Clock frequency: 200MHz
Memory: 256Mb DRAM
Kind of interface: parallel
Memory organisation: 4Mx16bitx4
Kind of package: reel; tape
Kind of memory: DDR1; SDRAM
Supply voltage: 2.5V DC
Access time: 5ns
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 200MHz; 5ns; TFBGA60
Mounting: SMD
Case: TFBGA60
Type of integrated circuit: DRAM memory
Operating temperature: 0...70°C
Clock frequency: 200MHz
Memory: 256Mb DRAM
Kind of interface: parallel
Memory organisation: 4Mx16bitx4
Kind of package: reel; tape
Kind of memory: DDR1; SDRAM
Supply voltage: 2.5V DC
Access time: 5ns
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| IS43R16160F-5BLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 200MHz; 5ns; TFBGA60
Kind of package: in-tray; tube
Kind of interface: parallel
Mounting: SMD
Case: TFBGA60
Operating temperature: -40...85°C
Access time: 5ns
Supply voltage: 2.5V DC
Memory: 256Mb DRAM
Clock frequency: 200MHz
Memory organisation: 4Mx16bitx4
Kind of memory: DDR1; SDRAM
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 200MHz; 5ns; TFBGA60
Kind of package: in-tray; tube
Kind of interface: parallel
Mounting: SMD
Case: TFBGA60
Operating temperature: -40...85°C
Access time: 5ns
Supply voltage: 2.5V DC
Memory: 256Mb DRAM
Clock frequency: 200MHz
Memory organisation: 4Mx16bitx4
Kind of memory: DDR1; SDRAM
Type of integrated circuit: DRAM memory
товару немає в наявності
Мінімальне замовлення: 190 шт
В кошику
од. на суму грн.
| IS43R16160F-5TL |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 200MHz; 5ns; TSOP66 II
Kind of package: in-tray; tube
Kind of interface: parallel
Mounting: SMD
Case: TSOP66 II
Operating temperature: 0...70°C
Access time: 5ns
Supply voltage: 2.5V DC
Memory: 256Mb DRAM
Clock frequency: 200MHz
Memory organisation: 4Mx16bitx4
Kind of memory: DDR1; SDRAM
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 200MHz; 5ns; TSOP66 II
Kind of package: in-tray; tube
Kind of interface: parallel
Mounting: SMD
Case: TSOP66 II
Operating temperature: 0...70°C
Access time: 5ns
Supply voltage: 2.5V DC
Memory: 256Mb DRAM
Clock frequency: 200MHz
Memory organisation: 4Mx16bitx4
Kind of memory: DDR1; SDRAM
Type of integrated circuit: DRAM memory
товару немає в наявності
В кошику
од. на суму грн.
| IS43R16160F-5TL-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 200MHz; 5ns; TSOP66 II
Kind of package: reel; tape
Kind of interface: parallel
Mounting: SMD
Case: TSOP66 II
Operating temperature: 0...70°C
Access time: 5ns
Supply voltage: 2.5V DC
Memory: 256Mb DRAM
Clock frequency: 200MHz
Memory organisation: 4Mx16bitx4
Kind of memory: DDR1; SDRAM
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 200MHz; 5ns; TSOP66 II
Kind of package: reel; tape
Kind of interface: parallel
Mounting: SMD
Case: TSOP66 II
Operating temperature: 0...70°C
Access time: 5ns
Supply voltage: 2.5V DC
Memory: 256Mb DRAM
Clock frequency: 200MHz
Memory organisation: 4Mx16bitx4
Kind of memory: DDR1; SDRAM
Type of integrated circuit: DRAM memory
товару немає в наявності
Мінімальне замовлення: 1500 шт
В кошику
од. на суму грн.
| IS43R16160F-5TLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 200MHz; 5ns; TSOP66 II
Kind of package: in-tray; tube
Kind of interface: parallel
Mounting: SMD
Case: TSOP66 II
Operating temperature: -40...85°C
Access time: 5ns
Supply voltage: 2.5V DC
Memory: 256Mb DRAM
Clock frequency: 200MHz
Memory organisation: 4Mx16bitx4
Kind of memory: DDR1; SDRAM
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 200MHz; 5ns; TSOP66 II
Kind of package: in-tray; tube
Kind of interface: parallel
Mounting: SMD
Case: TSOP66 II
Operating temperature: -40...85°C
Access time: 5ns
Supply voltage: 2.5V DC
Memory: 256Mb DRAM
Clock frequency: 200MHz
Memory organisation: 4Mx16bitx4
Kind of memory: DDR1; SDRAM
Type of integrated circuit: DRAM memory
товару немає в наявності
В кошику
од. на суму грн.
| IS43R16160F-5TLI-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 200MHz; 5ns; TSOP66 II
Kind of package: reel; tape
Kind of interface: parallel
Mounting: SMD
Case: TSOP66 II
Operating temperature: -40...85°C
Access time: 5ns
Supply voltage: 2.5V DC
Memory: 256Mb DRAM
Clock frequency: 200MHz
Memory organisation: 4Mx16bitx4
Kind of memory: DDR1; SDRAM
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 200MHz; 5ns; TSOP66 II
Kind of package: reel; tape
Kind of interface: parallel
Mounting: SMD
Case: TSOP66 II
Operating temperature: -40...85°C
Access time: 5ns
Supply voltage: 2.5V DC
Memory: 256Mb DRAM
Clock frequency: 200MHz
Memory organisation: 4Mx16bitx4
Kind of memory: DDR1; SDRAM
Type of integrated circuit: DRAM memory
товару немає в наявності
Мінімальне замовлення: 1500 шт
В кошику
од. на суму грн.
| IS43R16160F-6BLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TFBGA60
Kind of package: in-tray; tube
Kind of interface: parallel
Mounting: SMD
Case: TFBGA60
Operating temperature: -40...85°C
Access time: 6ns
Supply voltage: 2.5V DC
Memory: 256Mb DRAM
Clock frequency: 166MHz
Memory organisation: 4Mx16bitx4
Kind of memory: DDR1; SDRAM
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TFBGA60
Kind of package: in-tray; tube
Kind of interface: parallel
Mounting: SMD
Case: TFBGA60
Operating temperature: -40...85°C
Access time: 6ns
Supply voltage: 2.5V DC
Memory: 256Mb DRAM
Clock frequency: 166MHz
Memory organisation: 4Mx16bitx4
Kind of memory: DDR1; SDRAM
Type of integrated circuit: DRAM memory
товару немає в наявності
Мінімальне замовлення: 190 шт
В кошику
од. на суму грн.
| IS43R16160F-6BLI-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TFBGA60
Kind of package: reel; tape
Kind of interface: parallel
Mounting: SMD
Case: TFBGA60
Operating temperature: -40...85°C
Access time: 6ns
Supply voltage: 2.5V DC
Memory: 256Mb DRAM
Clock frequency: 166MHz
Memory organisation: 4Mx16bitx4
Kind of memory: DDR1; SDRAM
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TFBGA60
Kind of package: reel; tape
Kind of interface: parallel
Mounting: SMD
Case: TFBGA60
Operating temperature: -40...85°C
Access time: 6ns
Supply voltage: 2.5V DC
Memory: 256Mb DRAM
Clock frequency: 166MHz
Memory organisation: 4Mx16bitx4
Kind of memory: DDR1; SDRAM
Type of integrated circuit: DRAM memory
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| IS43R16320F-5BL |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 200MHz; 5ns; TWBGA60
Kind of package: in-tray; tube
Kind of interface: parallel
Mounting: SMD
Case: TWBGA60
Operating temperature: 0...70°C
Access time: 5ns
Supply voltage: 2.5V DC
Memory: 512Mb DRAM
Clock frequency: 200MHz
Memory organisation: 8Mx16bitx4
Kind of memory: DDR1; SDRAM
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 200MHz; 5ns; TWBGA60
Kind of package: in-tray; tube
Kind of interface: parallel
Mounting: SMD
Case: TWBGA60
Operating temperature: 0...70°C
Access time: 5ns
Supply voltage: 2.5V DC
Memory: 512Mb DRAM
Clock frequency: 200MHz
Memory organisation: 8Mx16bitx4
Kind of memory: DDR1; SDRAM
Type of integrated circuit: DRAM memory
товару немає в наявності
Мінімальне замовлення: 190 шт
В кошику
од. на суму грн.
| IS43R16320F-5BL-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 200MHz; 5ns; TWBGA60
Mounting: SMD
Case: TWBGA60
Type of integrated circuit: DRAM memory
Operating temperature: 0...70°C
Clock frequency: 200MHz
Memory: 512Mb DRAM
Kind of interface: parallel
Memory organisation: 8Mx16bitx4
Kind of package: reel; tape
Kind of memory: DDR1; SDRAM
Supply voltage: 2.5V DC
Access time: 5ns
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 200MHz; 5ns; TWBGA60
Mounting: SMD
Case: TWBGA60
Type of integrated circuit: DRAM memory
Operating temperature: 0...70°C
Clock frequency: 200MHz
Memory: 512Mb DRAM
Kind of interface: parallel
Memory organisation: 8Mx16bitx4
Kind of package: reel; tape
Kind of memory: DDR1; SDRAM
Supply voltage: 2.5V DC
Access time: 5ns
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| IS43R16320F-5BLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 200MHz; 5ns; TWBGA60
Kind of package: in-tray; tube
Kind of interface: parallel
Mounting: SMD
Case: TWBGA60
Operating temperature: -40...85°C
Access time: 5ns
Supply voltage: 2.5V DC
Memory: 512Mb DRAM
Clock frequency: 200MHz
Memory organisation: 8Mx16bitx4
Kind of memory: DDR1; SDRAM
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 200MHz; 5ns; TWBGA60
Kind of package: in-tray; tube
Kind of interface: parallel
Mounting: SMD
Case: TWBGA60
Operating temperature: -40...85°C
Access time: 5ns
Supply voltage: 2.5V DC
Memory: 512Mb DRAM
Clock frequency: 200MHz
Memory organisation: 8Mx16bitx4
Kind of memory: DDR1; SDRAM
Type of integrated circuit: DRAM memory
товару немає в наявності
Мінімальне замовлення: 190 шт
В кошику
од. на суму грн.
| IS43R16320F-5TLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 200MHz; 5ns; TSOP66 II
Kind of package: in-tray; tube
Kind of interface: parallel
Mounting: SMD
Case: TSOP66 II
Operating temperature: -40...85°C
Access time: 5ns
Supply voltage: 2.5V DC
Memory: 512Mb DRAM
Clock frequency: 200MHz
Memory organisation: 8Mx16bitx4
Kind of memory: DDR1; SDRAM
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 200MHz; 5ns; TSOP66 II
Kind of package: in-tray; tube
Kind of interface: parallel
Mounting: SMD
Case: TSOP66 II
Operating temperature: -40...85°C
Access time: 5ns
Supply voltage: 2.5V DC
Memory: 512Mb DRAM
Clock frequency: 200MHz
Memory organisation: 8Mx16bitx4
Kind of memory: DDR1; SDRAM
Type of integrated circuit: DRAM memory
товару немає в наявності
Мінімальне замовлення: 108 шт
В кошику
од. на суму грн.
| IS43R16320F-5TLI-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 200MHz; 5ns; TSOP66 II
Kind of package: reel; tape
Kind of interface: parallel
Mounting: SMD
Case: TSOP66 II
Operating temperature: -40...85°C
Access time: 5ns
Supply voltage: 2.5V DC
Memory: 512Mb DRAM
Clock frequency: 200MHz
Memory organisation: 8Mx16bitx4
Kind of memory: DDR1; SDRAM
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 200MHz; 5ns; TSOP66 II
Kind of package: reel; tape
Kind of interface: parallel
Mounting: SMD
Case: TSOP66 II
Operating temperature: -40...85°C
Access time: 5ns
Supply voltage: 2.5V DC
Memory: 512Mb DRAM
Clock frequency: 200MHz
Memory organisation: 8Mx16bitx4
Kind of memory: DDR1; SDRAM
Type of integrated circuit: DRAM memory
товару немає в наявності
Мінімальне замовлення: 1500 шт
В кошику
од. на суму грн.
| IS43R16320F-6BL |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TWBGA60
Kind of package: in-tray; tube
Kind of interface: parallel
Mounting: SMD
Case: TWBGA60
Operating temperature: 0...70°C
Access time: 6ns
Supply voltage: 2.5V DC
Memory: 512Mb DRAM
Clock frequency: 166MHz
Memory organisation: 8Mx16bitx4
Kind of memory: DDR1; SDRAM
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TWBGA60
Kind of package: in-tray; tube
Kind of interface: parallel
Mounting: SMD
Case: TWBGA60
Operating temperature: 0...70°C
Access time: 6ns
Supply voltage: 2.5V DC
Memory: 512Mb DRAM
Clock frequency: 166MHz
Memory organisation: 8Mx16bitx4
Kind of memory: DDR1; SDRAM
Type of integrated circuit: DRAM memory
товару немає в наявності
Мінімальне замовлення: 190 шт
В кошику
од. на суму грн.
| IS43R16320F-6BLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TWBGA60
Kind of package: in-tray; tube
Kind of interface: parallel
Mounting: SMD
Case: TWBGA60
Operating temperature: -40...85°C
Access time: 6ns
Supply voltage: 2.5V DC
Memory: 512Mb DRAM
Clock frequency: 166MHz
Memory organisation: 8Mx16bitx4
Kind of memory: DDR1; SDRAM
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TWBGA60
Kind of package: in-tray; tube
Kind of interface: parallel
Mounting: SMD
Case: TWBGA60
Operating temperature: -40...85°C
Access time: 6ns
Supply voltage: 2.5V DC
Memory: 512Mb DRAM
Clock frequency: 166MHz
Memory organisation: 8Mx16bitx4
Kind of memory: DDR1; SDRAM
Type of integrated circuit: DRAM memory
товару немає в наявності
Мінімальне замовлення: 190 шт
В кошику
од. на суму грн.
| IS43R16320F-6BLI-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TWBGA60
Kind of package: reel; tape
Kind of interface: parallel
Mounting: SMD
Case: TWBGA60
Operating temperature: -40...85°C
Access time: 6ns
Supply voltage: 2.5V DC
Memory: 512Mb DRAM
Clock frequency: 166MHz
Memory organisation: 8Mx16bitx4
Kind of memory: DDR1; SDRAM
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TWBGA60
Kind of package: reel; tape
Kind of interface: parallel
Mounting: SMD
Case: TWBGA60
Operating temperature: -40...85°C
Access time: 6ns
Supply voltage: 2.5V DC
Memory: 512Mb DRAM
Clock frequency: 166MHz
Memory organisation: 8Mx16bitx4
Kind of memory: DDR1; SDRAM
Type of integrated circuit: DRAM memory
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| IS43R16320F-6TL |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TSOP66 II
Kind of package: in-tray; tube
Kind of interface: parallel
Mounting: SMD
Case: TSOP66 II
Operating temperature: 0...70°C
Access time: 6ns
Supply voltage: 2.5V DC
Memory: 512Mb DRAM
Clock frequency: 166MHz
Memory organisation: 8Mx16bitx4
Kind of memory: DDR1; SDRAM
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TSOP66 II
Kind of package: in-tray; tube
Kind of interface: parallel
Mounting: SMD
Case: TSOP66 II
Operating temperature: 0...70°C
Access time: 6ns
Supply voltage: 2.5V DC
Memory: 512Mb DRAM
Clock frequency: 166MHz
Memory organisation: 8Mx16bitx4
Kind of memory: DDR1; SDRAM
Type of integrated circuit: DRAM memory
товару немає в наявності
Мінімальне замовлення: 108 шт
В кошику
од. на суму грн.
| IS43R16320F-6TLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TSOP66 II
Kind of package: in-tray; tube
Kind of interface: parallel
Mounting: SMD
Case: TSOP66 II
Operating temperature: -40...85°C
Access time: 6ns
Supply voltage: 2.5V DC
Memory: 512Mb DRAM
Clock frequency: 166MHz
Memory organisation: 8Mx16bitx4
Kind of memory: DDR1; SDRAM
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TSOP66 II
Kind of package: in-tray; tube
Kind of interface: parallel
Mounting: SMD
Case: TSOP66 II
Operating temperature: -40...85°C
Access time: 6ns
Supply voltage: 2.5V DC
Memory: 512Mb DRAM
Clock frequency: 166MHz
Memory organisation: 8Mx16bitx4
Kind of memory: DDR1; SDRAM
Type of integrated circuit: DRAM memory
товару немає в наявності
Мінімальне замовлення: 108 шт
В кошику
од. на суму грн.
| IS43R16320F-6TLI-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TSOP66 II
Kind of package: reel; tape
Kind of interface: parallel
Mounting: SMD
Case: TSOP66 II
Operating temperature: -40...85°C
Access time: 6ns
Supply voltage: 2.5V DC
Memory: 512Mb DRAM
Clock frequency: 166MHz
Memory organisation: 8Mx16bitx4
Kind of memory: DDR1; SDRAM
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TSOP66 II
Kind of package: reel; tape
Kind of interface: parallel
Mounting: SMD
Case: TSOP66 II
Operating temperature: -40...85°C
Access time: 6ns
Supply voltage: 2.5V DC
Memory: 512Mb DRAM
Clock frequency: 166MHz
Memory organisation: 8Mx16bitx4
Kind of memory: DDR1; SDRAM
Type of integrated circuit: DRAM memory
товару немає в наявності
Мінімальне замовлення: 1500 шт
В кошику
од. на суму грн.
| IS43R16800E-5TL-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 200MHz; 5ns; TSOP66 II
Kind of package: reel; tape
Kind of interface: parallel
Mounting: SMD
Case: TSOP66 II
Operating temperature: 0...70°C
Access time: 5ns
Supply voltage: 2.5V DC
Memory: 128Mb DRAM
Clock frequency: 200MHz
Memory organisation: 2Mx16bitx4
Kind of memory: DDR1; SDRAM
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 200MHz; 5ns; TSOP66 II
Kind of package: reel; tape
Kind of interface: parallel
Mounting: SMD
Case: TSOP66 II
Operating temperature: 0...70°C
Access time: 5ns
Supply voltage: 2.5V DC
Memory: 128Mb DRAM
Clock frequency: 200MHz
Memory organisation: 2Mx16bitx4
Kind of memory: DDR1; SDRAM
Type of integrated circuit: DRAM memory
товару немає в наявності
Мінімальне замовлення: 1500 шт
В кошику
од. на суму грн.
| IS43R16320D-6TLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 32Mx16bit; 166MHz; 6ns; TSOP66 II; tube
Kind of package: tube
Kind of interface: parallel
Mounting: SMD
Case: TSOP66 II
Operating temperature: -40...85°C
Access time: 6ns
Supply voltage: 2.5V DC
Memory: 512Mb DRAM
Clock frequency: 166MHz
Memory organisation: 32Mx16bit
Kind of memory: SDRAM
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 32Mx16bit; 166MHz; 6ns; TSOP66 II; tube
Kind of package: tube
Kind of interface: parallel
Mounting: SMD
Case: TSOP66 II
Operating temperature: -40...85°C
Access time: 6ns
Supply voltage: 2.5V DC
Memory: 512Mb DRAM
Clock frequency: 166MHz
Memory organisation: 32Mx16bit
Kind of memory: SDRAM
Type of integrated circuit: DRAM memory
товару немає в наявності
В кошику
од. на суму грн.
| IS43R16160D-6TL |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx32bit; 166MHz; 6ns; TSOP66 II; tube
Kind of package: tube
Kind of interface: parallel
Mounting: SMD
Case: TSOP66 II
Operating temperature: 0...70°C
Access time: 6ns
Supply voltage: 2.5V DC
Memory: 256Mb DRAM
Clock frequency: 166MHz
Memory organisation: 16Mx32bit
Kind of memory: SDRAM
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx32bit; 166MHz; 6ns; TSOP66 II; tube
Kind of package: tube
Kind of interface: parallel
Mounting: SMD
Case: TSOP66 II
Operating temperature: 0...70°C
Access time: 6ns
Supply voltage: 2.5V DC
Memory: 256Mb DRAM
Clock frequency: 166MHz
Memory organisation: 16Mx32bit
Kind of memory: SDRAM
Type of integrated circuit: DRAM memory
товару немає в наявності
В кошику
од. на суму грн.
| IS43R16160D-6TLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx32bit; 166MHz; 6ns; TSOP66 II; tube
Kind of package: tube
Kind of interface: parallel
Mounting: SMD
Case: TSOP66 II
Operating temperature: -40...85°C
Access time: 6ns
Supply voltage: 2.5V DC
Memory: 256Mb DRAM
Clock frequency: 166MHz
Memory organisation: 16Mx32bit
Kind of memory: SDRAM
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx32bit; 166MHz; 6ns; TSOP66 II; tube
Kind of package: tube
Kind of interface: parallel
Mounting: SMD
Case: TSOP66 II
Operating temperature: -40...85°C
Access time: 6ns
Supply voltage: 2.5V DC
Memory: 256Mb DRAM
Clock frequency: 166MHz
Memory organisation: 16Mx32bit
Kind of memory: SDRAM
Type of integrated circuit: DRAM memory
товару немає в наявності
В кошику
од. на суму грн.
| IS46TR16128CL-125KBLA1-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 128Mx16bit; 933MHz; 13.75ns; TWBGA96
Supply voltage: 1.35V DC
Mounting: SMD
Operating temperature: -40...95°C
Kind of memory: DDR3L; SDRAM
Type of integrated circuit: DRAM memory
Kind of package: reel; tape
Kind of interface: parallel
Case: TWBGA96
Access time: 13.75ns
Clock frequency: 933MHz
Memory: 2Gb DRAM
Memory organisation: 128Mx16bit
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 128Mx16bit; 933MHz; 13.75ns; TWBGA96
Supply voltage: 1.35V DC
Mounting: SMD
Operating temperature: -40...95°C
Kind of memory: DDR3L; SDRAM
Type of integrated circuit: DRAM memory
Kind of package: reel; tape
Kind of interface: parallel
Case: TWBGA96
Access time: 13.75ns
Clock frequency: 933MHz
Memory: 2Gb DRAM
Memory organisation: 128Mx16bit
товару немає в наявності
Мінімальне замовлення: 1500 шт
В кошику
од. на суму грн.
| IS46TR16128CL-125KBLA2 |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 128Mx16bit; 933MHz; 13.75ns; TWBGA96
Supply voltage: 1.35V DC
Mounting: SMD
Operating temperature: -40...105°C
Kind of memory: DDR3L; SDRAM
Type of integrated circuit: DRAM memory
Kind of package: in-tray; tube
Kind of interface: parallel
Case: TWBGA96
Access time: 13.75ns
Clock frequency: 933MHz
Memory: 2Gb DRAM
Memory organisation: 128Mx16bit
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 128Mx16bit; 933MHz; 13.75ns; TWBGA96
Supply voltage: 1.35V DC
Mounting: SMD
Operating temperature: -40...105°C
Kind of memory: DDR3L; SDRAM
Type of integrated circuit: DRAM memory
Kind of package: in-tray; tube
Kind of interface: parallel
Case: TWBGA96
Access time: 13.75ns
Clock frequency: 933MHz
Memory: 2Gb DRAM
Memory organisation: 128Mx16bit
товару немає в наявності
Мінімальне замовлення: 190 шт
В кошику
од. на суму грн.
| IS43TR16128CL-125KBLI-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 128Mx16bit; 933MHz; 13.75ns; TWBGA96
Supply voltage: 1.35V DC
Mounting: SMD
Operating temperature: -40...95°C
Kind of memory: DDR3L; SDRAM
Type of integrated circuit: DRAM memory
Kind of package: reel; tape
Kind of interface: parallel
Case: TWBGA96
Access time: 13.75ns
Clock frequency: 933MHz
Memory: 2Gb DRAM
Memory organisation: 128Mx16bit
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 128Mx16bit; 933MHz; 13.75ns; TWBGA96
Supply voltage: 1.35V DC
Mounting: SMD
Operating temperature: -40...95°C
Kind of memory: DDR3L; SDRAM
Type of integrated circuit: DRAM memory
Kind of package: reel; tape
Kind of interface: parallel
Case: TWBGA96
Access time: 13.75ns
Clock frequency: 933MHz
Memory: 2Gb DRAM
Memory organisation: 128Mx16bit
товару немає в наявності
Мінімальне замовлення: 1500 шт
В кошику
од. на суму грн.
| IS43TR16128CL-125KBLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 128Mx16bit; 933MHz; 13.75ns; TWBGA96
Supply voltage: 1.35V DC
Mounting: SMD
Operating temperature: -40...95°C
Kind of memory: DDR3L; SDRAM
Type of integrated circuit: DRAM memory
Kind of package: in-tray; tube
Kind of interface: parallel
Case: TWBGA96
Access time: 13.75ns
Clock frequency: 933MHz
Memory: 2Gb DRAM
Memory organisation: 128Mx16bit
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 128Mx16bit; 933MHz; 13.75ns; TWBGA96
Supply voltage: 1.35V DC
Mounting: SMD
Operating temperature: -40...95°C
Kind of memory: DDR3L; SDRAM
Type of integrated circuit: DRAM memory
Kind of package: in-tray; tube
Kind of interface: parallel
Case: TWBGA96
Access time: 13.75ns
Clock frequency: 933MHz
Memory: 2Gb DRAM
Memory organisation: 128Mx16bit
товару немає в наявності
Мінімальне замовлення: 190 шт
В кошику
од. на суму грн.
| IS43TR16128CL-125KBL-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 128Mx16bit; 933MHz; 13.75ns; TWBGA96
Supply voltage: 1.35V DC
Mounting: SMD
Operating temperature: 0...95°C
Kind of memory: DDR3L; SDRAM
Type of integrated circuit: DRAM memory
Kind of package: reel; tape
Kind of interface: parallel
Case: TWBGA96
Access time: 13.75ns
Clock frequency: 933MHz
Memory: 2Gb DRAM
Memory organisation: 128Mx16bit
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 128Mx16bit; 933MHz; 13.75ns; TWBGA96
Supply voltage: 1.35V DC
Mounting: SMD
Operating temperature: 0...95°C
Kind of memory: DDR3L; SDRAM
Type of integrated circuit: DRAM memory
Kind of package: reel; tape
Kind of interface: parallel
Case: TWBGA96
Access time: 13.75ns
Clock frequency: 933MHz
Memory: 2Gb DRAM
Memory organisation: 128Mx16bit
товару немає в наявності
Мінімальне замовлення: 1500 шт
В кошику
од. на суму грн.
| IS42S32400F-6TL |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 4Mx32bit; 166MHz; 6ns; TSOP86 II; tube
Kind of package: tube
Kind of memory: SDRAM
Mounting: SMD
Supply voltage: 3.3V DC
Access time: 6ns
Type of integrated circuit: DRAM memory
Operating temperature: 0...70°C
Clock frequency: 166MHz
Memory: 128Mb DRAM
Kind of interface: parallel
Memory organisation: 4Mx32bit
Case: TSOP86 II
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 4Mx32bit; 166MHz; 6ns; TSOP86 II; tube
Kind of package: tube
Kind of memory: SDRAM
Mounting: SMD
Supply voltage: 3.3V DC
Access time: 6ns
Type of integrated circuit: DRAM memory
Operating temperature: 0...70°C
Clock frequency: 166MHz
Memory: 128Mb DRAM
Kind of interface: parallel
Memory organisation: 4Mx32bit
Case: TSOP86 II
на замовлення 7 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 433.95 грн |
| 5+ | 362.33 грн |
| IS43LR16400C-6BLI |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 166MHz; 6ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 64Mb DRAM
Memory organisation: 1Mx16bitx4
Clock frequency: 166MHz
Case: TFBGA60
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 1.7...1.95V DC
Access time: 6ns
Kind of interface: parallel
Kind of package: in-tray; tube
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 166MHz; 6ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 64Mb DRAM
Memory organisation: 1Mx16bitx4
Clock frequency: 166MHz
Case: TFBGA60
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 1.7...1.95V DC
Access time: 6ns
Kind of interface: parallel
Kind of package: in-tray; tube
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику
од. на суму грн.
| IS45S16400J-6CTLA1-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 166MHz; 6ns; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of package: reel; tape
Kind of memory: SDRAM
Kind of interface: parallel
Mounting: SMD
Case: TSOP54 II
Operating temperature: -40...85°C
Access time: 6ns
Supply voltage: 3...3.6V DC
Memory: 64Mb DRAM
Memory organisation: 1Mx16bitx4
Clock frequency: 166MHz
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 166MHz; 6ns; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of package: reel; tape
Kind of memory: SDRAM
Kind of interface: parallel
Mounting: SMD
Case: TSOP54 II
Operating temperature: -40...85°C
Access time: 6ns
Supply voltage: 3...3.6V DC
Memory: 64Mb DRAM
Memory organisation: 1Mx16bitx4
Clock frequency: 166MHz
товару немає в наявності
Мінімальне замовлення: 1500 шт
В кошику
од. на суму грн.
| IS45S16400J-7CTLA2-TR |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 143MHz; 7ns; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of package: reel; tape
Kind of memory: SDRAM
Kind of interface: parallel
Mounting: SMD
Case: TSOP54 II
Operating temperature: -40...105°C
Access time: 7ns
Supply voltage: 3...3.6V DC
Memory: 64Mb DRAM
Memory organisation: 1Mx16bitx4
Clock frequency: 143MHz
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 143MHz; 7ns; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of package: reel; tape
Kind of memory: SDRAM
Kind of interface: parallel
Mounting: SMD
Case: TSOP54 II
Operating temperature: -40...105°C
Access time: 7ns
Supply voltage: 3...3.6V DC
Memory: 64Mb DRAM
Memory organisation: 1Mx16bitx4
Clock frequency: 143MHz
товару немає в наявності
Мінімальне замовлення: 1500 шт
В кошику
од. на суму грн.
| IS25LP032D-JTLA3-TR |
|
Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 32MbFLASH; DTR,QPI,SPI; 133MHz; 2.3÷3.6V; USON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 32Mb FLASH
Interface: DTR; QPI; SPI
Operating frequency: 133MHz
Operating voltage: 2.3...3.6V
Case: USON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 32MbFLASH; DTR,QPI,SPI; 133MHz; 2.3÷3.6V; USON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 32Mb FLASH
Interface: DTR; QPI; SPI
Operating frequency: 133MHz
Operating voltage: 2.3...3.6V
Case: USON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| IS25LP512MH-RHLE-TR |
|
Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; DTR,QPI,SPI; 133MHz; 2.7÷3.6V
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: DTR; QPI; SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: TFBGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; DTR,QPI,SPI; 133MHz; 2.7÷3.6V
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: DTR; QPI; SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: TFBGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| IS46TR16640ED-15HBLA1 |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 64Mx16bit; 13.5ns; TWBGA96; -40÷95°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR3; SDRAM
Memory: 1Gb DRAM
Memory organisation: 64Mx16bit
Case: TWBGA96
Mounting: SMD
Operating temperature: -40...95°C
Supply voltage: 1.5V DC
Kind of package: in-tray; tube
Access time: 13.5ns
Kind of interface: parallel
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 64Mx16bit; 13.5ns; TWBGA96; -40÷95°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR3; SDRAM
Memory: 1Gb DRAM
Memory organisation: 64Mx16bit
Case: TWBGA96
Mounting: SMD
Operating temperature: -40...95°C
Supply voltage: 1.5V DC
Kind of package: in-tray; tube
Access time: 13.5ns
Kind of interface: parallel
товару немає в наявності
Мінімальне замовлення: 190 шт
В кошику
од. на суму грн.
| IS46TR16640ED-15HBLA2 |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 64Mx16bit; 13.5ns; TWBGA96; -40÷105°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR3; SDRAM
Memory: 1Gb DRAM
Memory organisation: 64Mx16bit
Case: TWBGA96
Mounting: SMD
Operating temperature: -40...105°C
Supply voltage: 1.5V DC
Kind of package: in-tray; tube
Access time: 13.5ns
Kind of interface: parallel
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 64Mx16bit; 13.5ns; TWBGA96; -40÷105°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR3; SDRAM
Memory: 1Gb DRAM
Memory organisation: 64Mx16bit
Case: TWBGA96
Mounting: SMD
Operating temperature: -40...105°C
Supply voltage: 1.5V DC
Kind of package: in-tray; tube
Access time: 13.5ns
Kind of interface: parallel
товару немає в наявності
Мінімальне замовлення: 190 шт
В кошику
од. на суму грн.