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IS61LPS12836EC-200B3LI-TR ISSI IS61LPS12836EC-200B3LI.pdf Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 3.1ns; TFBGA165
Mounting: SMD
Operating temperature: -40...85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Kind of interface: parallel
Case: TFBGA165
Access time: 3.1ns
Operating voltage: 3.3V
Memory: 4.5Mb SRAM
Memory organisation: 128kx36bit
Kind of package: reel; tape
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IS61LPS12836EC-200TQLI ISSI IS61LPS12836EC-200B3LI.pdf Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 3.1ns; QFP100
Mounting: SMD
Operating temperature: -40...85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Kind of interface: parallel
Case: QFP100
Access time: 3.1ns
Operating voltage: 3.3V
Memory: 4.5Mb SRAM
Memory organisation: 128kx36bit
Kind of package: in-tray; tube
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IS61NLF12836A-7.5TQLI IS61NLF12836A-7.5TQLI ISSI IS61NLF12836A-7.5TQLI.pdf Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 7.5ns; TQFP100
Mounting: SMD
Operating temperature: -40...85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Kind of interface: parallel
Case: TQFP100
Access time: 7.5ns
Operating voltage: 3.3V
Memory: 4.5Mb SRAM
Memory organisation: 128kx36bit
Kind of package: in-tray; tube
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IS61NLF12836A-7.5TQLI-TR IS61NLF12836A-7.5TQLI-TR ISSI IS61NLF12836A-7.5TQLI.pdf Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 7.5ns; TQFP100
Mounting: SMD
Operating temperature: -40...85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Kind of interface: parallel
Case: TQFP100
Access time: 7.5ns
Operating voltage: 3.3V
Memory: 4.5Mb SRAM
Memory organisation: 128kx36bit
Kind of package: reel; tape
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IS61NLP12836B-200TQLI IS61NLP12836B-200TQLI ISSI IS61NLP12836B-200TQLI.pdf Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 3.1ns; TQFP100
Mounting: SMD
Operating temperature: -40...85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Kind of interface: parallel
Case: TQFP100
Access time: 3.1ns
Operating voltage: 3.3V
Memory: 4.5Mb SRAM
Memory organisation: 128kx36bit
Kind of package: in-tray; tube
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IS61NLP12836B-200TQLI-TR IS61NLP12836B-200TQLI-TR ISSI IS61NLP12836B-200TQLI.pdf Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 3.1ns; TQFP100
Mounting: SMD
Operating temperature: -40...85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Kind of interface: parallel
Case: TQFP100
Access time: 3.1ns
Operating voltage: 3.3V
Memory: 4.5Mb SRAM
Memory organisation: 128kx36bit
Kind of package: reel; tape
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IS61NLP12836EC-200B3LI ISSI IS61NLP12836EC-200B3LI.pdf Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 3.1ns; TFBGA165
Mounting: SMD
Operating temperature: -40...85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Kind of interface: parallel
Case: TFBGA165
Access time: 3.1ns
Operating voltage: 3.3V
Memory: 4.5Mb SRAM
Memory organisation: 128kx36bit
Kind of package: in-tray; tube
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IS61NLP12836EC-200B3LI-TR ISSI IS61NLP12836EC-200B3LI.pdf Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 3.1ns; TFBGA165
Mounting: SMD
Operating temperature: -40...85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Kind of interface: parallel
Case: TFBGA165
Access time: 3.1ns
Operating voltage: 3.3V
Memory: 4.5Mb SRAM
Memory organisation: 128kx36bit
Kind of package: reel; tape
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IS25LP016D-JULE-TR ISSI IS25LP016D-JBLA3.pdf Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 16MbFLASH; DTR,QPI,SPI; 133MHz; 2.3÷3.6V; USON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: DTR; QPI; SPI
Operating frequency: 133MHz
Operating voltage: 2.3...3.6V
Case: USON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
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IS25LP080D-JULE-TR ISSI IS25LP080D-JBLE.pdf Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 8MbFLASH; DTR,QPI,SPI; 133MHz; 2.3÷3.6V; USON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 8Mb FLASH
Interface: DTR; QPI; SPI
Operating frequency: 133MHz
Operating voltage: 2.3...3.6V
Case: USON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
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IS25WP016D-JULE-TR ISSI IS25LP016D-JBLA3.pdf Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 16MbFLASH; DTR,QPI,SPI; 133MHz; 1.65÷1.95V
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: DTR; QPI; SPI
Operating frequency: 133MHz
Operating voltage: 1.65...1.95V
Case: USON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
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IS25WP080D-JULE-TR ISSI IS25LP080D-JBLE.pdf Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 8MbFLASH; DTR,QPI,SPI; 133MHz; 1.65÷1.95V; USON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 8Mb FLASH
Interface: DTR; QPI; SPI
Operating frequency: 133MHz
Operating voltage: 1.65...1.95V
Case: USON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
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IS43LD32160A-25BLI ISSI IS43LD16320A-25BLI.pdf Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 4Mx32bitx4; 400MHz; 18ns; TFBGA134
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Kind of memory: LPDDR2; SDRAM
Kind of interface: parallel
Case: TFBGA134
Access time: 18ns
Supply voltage: 1.14...1.3V DC; 1.7...1.95V DC
Clock frequency: 400MHz
Memory: 512Mb DRAM
Memory organisation: 4Mx32bitx4
Type of integrated circuit: DRAM memory
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IS43LD32160A-25BLI-TR ISSI IS43LD16320A-25BLI.pdf Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 4Mx32bitx4; 400MHz; 18ns; TFBGA134
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of memory: LPDDR2; SDRAM
Kind of interface: parallel
Case: TFBGA134
Access time: 18ns
Supply voltage: 1.14...1.3V DC; 1.7...1.95V DC
Clock frequency: 400MHz
Memory: 512Mb DRAM
Memory organisation: 4Mx32bitx4
Type of integrated circuit: DRAM memory
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IS25WQ040-JNLE IS25WQ040-JNLE ISSI IS25WQ040-JNLE.pdf Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 4MbFLASH; SPI; 104MHz; 1.65÷1.95V; SOP8; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 4Mb FLASH
Interface: SPI
Kind of interface: serial
Mounting: SMD
Operating frequency: 104MHz
Case: SOP8
Operating temperature: -40...105°C
Operating voltage: 1.65...1.95V
на замовлення 37 шт:
термін постачання 14-30 дні (днів)
11+40.85 грн
25+40.68 грн
Мінімальне замовлення: 11
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IS61LV25616AL-10TL ISSI IS61LV25616AL-10BLI.pdf description Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 3.3V; 10ns; TSOP44 II; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Operating voltage: 3.3V
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray; tube
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IS61LV2568L-10KLI ISSI 61LV2568L.pdf Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 3.3V; 10ns; SOJ36; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Operating voltage: 3.3V
Access time: 10ns
Case: SOJ36
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
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IS61LV25616AL-10BLI ISSI IS61LV25616AL-10BLI.pdf Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 3.3V; 10ns; miniBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Operating voltage: 3.3V
Access time: 10ns
Case: miniBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
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IS61LV2568L-10KLI-TR ISSI 61LV2568L.pdf Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 3.3V; 10ns; SOJ36; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Operating voltage: 3.3V
Access time: 10ns
Case: SOJ36
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
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IS61LV25616AL-10BLI-TR ISSI IS61LV25616AL-10BLI.pdf Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 3.3V; 10ns; miniBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Operating voltage: 3.3V
Access time: 10ns
Case: miniBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
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IS61LV25616AL-10TL-TR ISSI IS61LV25616AL-10BLI.pdf Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 3.3V; 10ns; TSOP44 II; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Operating voltage: 3.3V
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel; tape
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IS61LV256AL-10JLI-TR ISSI 61LV256AL.pdf Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 5V; 10ns; SOJ28; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 256kb SRAM
Memory organisation: 32kx8bit
Operating voltage: 5V
Access time: 10ns
Case: SOJ28
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
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IS61LV256AL-10TLI-TR ISSI 61LV256AL.pdf Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 3.3V; 10ns; TSOP28; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 256kb SRAM
Memory organisation: 32kx8bit
Operating voltage: 3.3V
Access time: 10ns
Case: TSOP28
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
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IS61LV25616AL-10TLI-TR ISSI 61LV25616AL.pdf Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 3.3V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Operating voltage: 3.3V
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
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IS43QR16512A-083TBL ISSI IS43QR16512A-083TBL.pdf Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8GbDRAM; 512Mx16bit; 14.16ns; TWBGA96; 0÷95°C
Memory: 8Gb DRAM
Supply voltage: 1.2V DC
Kind of memory: DDR4; SDRAM
Kind of package: in-tray; tube
Type of integrated circuit: DRAM memory
Case: TWBGA96
Memory organisation: 512Mx16bit
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...95°C
Access time: 14.16ns
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IS43QR16512A-083TBLI ISSI IS43QR16512A-083TBL.pdf Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8GbDRAM; 512Mx16bit; 14.16ns; TWBGA96; -40÷95°C
Memory: 8Gb DRAM
Supply voltage: 1.2V DC
Kind of memory: DDR4; SDRAM
Kind of package: in-tray; tube
Type of integrated circuit: DRAM memory
Case: TWBGA96
Memory organisation: 512Mx16bit
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...95°C
Access time: 14.16ns
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IS34MW01G164-BLI ISSI IS34MW01G164-BLI.pdf Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; parallel 8bit; VFBGA63; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NAND
Memory: 1Gb FLASH
Operating voltage: 1.7...1.95V
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Interface: parallel 8bit
Case: VFBGA63
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IS34ML02G084-TLI IS34ML02G084-TLI ISSI IS34ML02G084-BLI.pdf Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 2GbFLASH; parallel 8bit; TSOP48; parallel
Mounting: SMD
Type of integrated circuit: FLASH memory
Kind of interface: parallel
Case: TSOP48
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
Memory: 2Gb FLASH
Kind of memory: NAND
Interface: parallel 8bit
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IS34ML04G081-TLI ISSI IS34ML04G081-TLI.pdf Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 4GbFLASH; parallel 8bit; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NAND
Memory: 4Gb FLASH
Operating voltage: 2.7...3.6V
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Interface: parallel 8bit
Case: TSOP48
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IS62WV1288BLL-55TLI IS62WV1288BLL-55TLI ISSI is62wv1288bll.pdf Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 3.3V; 55ns; TSOP32; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Operating voltage: 3.3V
Access time: 55ns
Case: TSOP32
Kind of interface: parallel
Mounting: SMD
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IS62WV1288BLL-55QLI ISSI 62WV1288ALL.pdf Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.5÷3.6V; 55ns; SOP32
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Operating voltage: 2.5...3.6V
Access time: 55ns
Case: SOP32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
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IS62WV1288BLL-55QLI-TR ISSI 62WV1288ALL.pdf Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.5÷3.6V; 55ns; TSOP32 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Operating voltage: 2.5...3.6V
Access time: 55ns
Case: TSOP32 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
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IS62WV1288BLL-55TLI-TR ISSI 62WV1288ALL.pdf Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.5÷3.6V; 55ns; TSOP32
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Operating voltage: 2.5...3.6V
Access time: 55ns
Case: TSOP32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
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IS25LP016D-JBLE IS25LP016D-JBLE ISSI IS25LP016D-JBLA3.pdf Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 16MbFLASH; DTR,QPI,SPI; 133MHz; 2.3÷3.6V; SO8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: DTR; QPI; SPI
Operating frequency: 133MHz
Operating voltage: 2.3...3.6V
Case: SO8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
на замовлення 40 шт:
термін постачання 14-30 дні (днів)
7+67.61 грн
Мінімальне замовлення: 7
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IS62C256AL-45TLI IS62C256AL-45TLI ISSI 62-65C256AL.pdf Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 5V; 45ns; TSOP28; parallel
Mounting: SMD
Case: TSOP28
Operating temperature: -40...85°C
Access time: 45ns
Operating voltage: 5V
Memory organisation: 32kx8bit
Memory: 256kb SRAM
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Kind of interface: parallel
на замовлення 59 шт:
термін постачання 14-30 дні (днів)
5+106.37 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
IS61C256AL-12TLI IS61C256AL-12TLI ISSI 61C256AL.pdf Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 5V; 12ns; TSOP28; parallel
Mounting: SMD
Case: TSOP28
Operating temperature: -40...85°C
Access time: 12ns
Operating voltage: 5V
Memory organisation: 32kx8bit
Memory: 256kb SRAM
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Kind of interface: parallel
на замовлення 64 шт:
термін постачання 14-30 дні (днів)
5+108.17 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
IS61C256AL-12TLI-TR ISSI 61C256AL.pdf Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 5V; 12ns; TSOP28; parallel
Mounting: SMD
Case: TSOP28
Operating temperature: -40...85°C
Access time: 12ns
Operating voltage: 5V
Memory organisation: 32kx8bit
Memory: 256kb SRAM
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Kind of interface: parallel
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IS62C256AL-45TLI-TR ISSI 62-65C256AL.pdf Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 5V; 45ns; TSOP28; parallel
Mounting: SMD
Case: TSOP28
Operating temperature: -40...85°C
Access time: 45ns
Operating voltage: 5V
Memory organisation: 32kx8bit
Memory: 256kb SRAM
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Kind of interface: parallel
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IS61C64AL-10TLI ISSI 61C64AL.pdf Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 64kbSRAM; 8kx8bit; 5V; 10ns; TSOP28; parallel
Mounting: SMD
Case: TSOP28
Operating temperature: -40...85°C
Access time: 10ns
Operating voltage: 5V
Memory organisation: 8kx8bit
Memory: 64kb SRAM
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Kind of interface: parallel
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IS61C64AL-10TLI-TR ISSI 61C64AL.pdf Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 64kbSRAM; 8kx8bit; 5V; 10ns; TSOP28; parallel
Mounting: SMD
Case: TSOP28
Operating temperature: -40...85°C
Access time: 10ns
Operating voltage: 5V
Memory organisation: 8kx8bit
Memory: 64kb SRAM
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Kind of interface: parallel
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IS62LV256AL-45TLI ISSI 62-65LV256AL.pdf Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 3.3V; 45ns; TSOP28; parallel
Mounting: SMD
Case: TSOP28
Operating temperature: -40...85°C
Access time: 45ns
Operating voltage: 3.3V
Memory organisation: 32kx8bit
Memory: 256kb SRAM
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Kind of interface: parallel
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IS61C25616AL-10TLI IS61C25616AL-10TLI ISSI 61-64C25616AL-AS.pdf Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 5V; 10ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 5V
на замовлення 23 шт:
термін постачання 14-30 дні (днів)
1+596.76 грн
5+499.73 грн
В кошику  од. на суму  грн.
IS61LPD51236A-200TQLI IS61LPD51236A-200TQLI ISSI IS61LPD51236A-200TQLI.pdf Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 3.3V; 3.1ns; TQFP100
Type of integrated circuit: SRAM memory
Case: TQFP100
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Kind of interface: parallel
Kind of memory: SRAM
Access time: 3.1ns
Operating voltage: 3.3V
Memory: 18Mb SRAM
Memory organisation: 512kx36bit
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IS61LPS25636A-200B3LI ISSI IS61LPS25636A-200B3LI.pdf Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 3.5ns; BGA165; parallel
Type of integrated circuit: SRAM memory
Case: BGA165
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Kind of interface: parallel
Kind of memory: SRAM
Access time: 3.5ns
Operating voltage: 3.3V
Memory: 9Mb SRAM
Memory organisation: 256kx36bit
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IS61LPS25636A-200B3LI-TR ISSI IS61LPS25636A-200B3LI.pdf Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 3.5ns; BGA165; parallel
Type of integrated circuit: SRAM memory
Case: BGA165
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of interface: parallel
Kind of memory: SRAM
Access time: 3.5ns
Operating voltage: 3.3V
Memory: 9Mb SRAM
Memory organisation: 256kx36bit
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IS61LPS25636A-200TQLI ISSI IS61LPS25636A-200B3LI.pdf Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 3.5ns; QFP100; parallel
Type of integrated circuit: SRAM memory
Case: QFP100
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Kind of interface: parallel
Kind of memory: SRAM
Access time: 3.5ns
Operating voltage: 3.3V
Memory: 9Mb SRAM
Memory organisation: 256kx36bit
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IS61LPS25636A-200TQLI-TR ISSI IS61LPS25636A-200B3LI.pdf Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 3.5ns; QFP100; parallel
Type of integrated circuit: SRAM memory
Case: QFP100
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of interface: parallel
Kind of memory: SRAM
Access time: 3.5ns
Operating voltage: 3.3V
Memory: 9Mb SRAM
Memory organisation: 256kx36bit
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IS61NLP25636A-200B3LI ISSI IS61NLP25636A-200B3LI.pdf Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 200ns; PBGA165
Type of integrated circuit: SRAM memory
Case: PBGA165
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Kind of interface: parallel
Kind of memory: SRAM
Access time: 200ns
Operating voltage: 3.3V
Memory: 9Mb SRAM
Memory organisation: 256kx36bit
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IS61QDB42M36A-300M3L ISSI IS61QDB42M36A-300M3L.pdf Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; 1.8V; LFBGA165; parallel
Type of integrated circuit: SRAM memory
Case: LFBGA165
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray; tube
Kind of interface: parallel
Kind of memory: SRAM
Operating voltage: 1.8V
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
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В кошику  од. на суму  грн.
IS62WV10248BLL-55BLI ISSI IS62WV10248BLL-55BLI.pdf Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 1Mx8bit; 2.5÷3.6V; 55ns; miniBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 1Mx8bit
Operating voltage: 2.5...3.6V
Access time: 55ns
Case: miniBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
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IS62WV10248BLL-55BLI-TR ISSI IS62WV10248BLL-55BLI.pdf Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 1Mx8bit; 2.5÷3.6V; 55ns; miniBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 1Mx8bit
Operating voltage: 2.5...3.6V
Access time: 55ns
Case: miniBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
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IS42S16800F-6TLI IS42S16800F-6TLI ISSI IS42S16800F-5TLI.pdf Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TSOP54 II
Kind of package: in-tray; tube
Type of integrated circuit: DRAM memory
Kind of interface: parallel
Kind of memory: SDRAM
Mounting: SMD
Case: TSOP54 II
Operating temperature: -40...85°C
Access time: 6ns
Supply voltage: 3...3.6V DC
Memory: 128Mb DRAM
Clock frequency: 166MHz
Memory organisation: 2Mx16bitx4
на замовлення 5 шт:
термін постачання 14-30 дні (днів)
2+347.96 грн
5+284.60 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IS45S16800F-7TLA1 ISSI IS42S16800F-5TLI.pdf Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 143MHz; 7ns; TSOP54 II
Kind of package: in-tray; tube
Type of integrated circuit: DRAM memory
Kind of interface: parallel
Kind of memory: SDRAM
Mounting: SMD
Case: TSOP54 II
Operating temperature: -40...85°C
Access time: 7ns
Supply voltage: 3...3.6V DC
Memory: 128Mb DRAM
Clock frequency: 143MHz
Memory organisation: 2Mx16bitx4
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IS45S16800F-7TLA2 ISSI IS42S16800F-5TLI.pdf Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 143MHz; 7ns; TSOP54 II
Kind of package: in-tray; tube
Type of integrated circuit: DRAM memory
Kind of interface: parallel
Kind of memory: SDRAM
Mounting: SMD
Case: TSOP54 II
Operating temperature: -40...105°C
Access time: 7ns
Supply voltage: 3...3.6V DC
Memory: 128Mb DRAM
Clock frequency: 143MHz
Memory organisation: 2Mx16bitx4
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IS42S16800F-5TLI ISSI IS42S16800F-5TLI.pdf Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 200MHz; 5ns; TSOP54 II
Kind of package: in-tray; tube
Type of integrated circuit: DRAM memory
Kind of interface: parallel
Kind of memory: SDRAM
Mounting: SMD
Case: TSOP54 II
Operating temperature: -40...85°C
Access time: 5ns
Supply voltage: 3...3.6V DC
Memory: 128Mb DRAM
Clock frequency: 200MHz
Memory organisation: 2Mx16bitx4
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IS42S16800F-5TLI-TR ISSI IS42S16800F-5TLI.pdf Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 200MHz; 5ns; TSOP54 II
Kind of package: reel; tape
Type of integrated circuit: DRAM memory
Kind of interface: parallel
Kind of memory: SDRAM
Mounting: SMD
Case: TSOP54 II
Operating temperature: -40...85°C
Access time: 5ns
Supply voltage: 3...3.6V DC
Memory: 128Mb DRAM
Clock frequency: 200MHz
Memory organisation: 2Mx16bitx4
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IS42S16800F-6BL ISSI IS42S16800F-5TLI.pdf Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TFBGA54
Kind of package: in-tray; tube
Type of integrated circuit: DRAM memory
Kind of interface: parallel
Kind of memory: SDRAM
Mounting: SMD
Case: TFBGA54
Operating temperature: 0...70°C
Access time: 6ns
Supply voltage: 3...3.6V DC
Memory: 128Mb DRAM
Clock frequency: 166MHz
Memory organisation: 2Mx16bitx4
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IS42S16800F-6BL-TR ISSI IS42S16800F-5TLI.pdf Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TFBGA54
Kind of package: reel; tape
Type of integrated circuit: DRAM memory
Kind of interface: parallel
Kind of memory: SDRAM
Mounting: SMD
Case: TFBGA54
Operating temperature: 0...70°C
Access time: 6ns
Supply voltage: 3...3.6V DC
Memory: 128Mb DRAM
Clock frequency: 166MHz
Memory organisation: 2Mx16bitx4
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IS61WV51232BLL-10BLI ISSI IS61WV51232BLL-10BLI.pdf Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 512kx32bit; 2.4÷3.6V; 10ns; TFBGA90
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 512kx32bit
Operating voltage: 2.4...3.6V
Access time: 10ns
Case: TFBGA90
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
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IS61WV51232BLL-10BLI-TR ISSI IS61WV51232BLL-10BLI.pdf Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 512kx32bit; 2.4÷3.6V; 10ns; TFBGA90
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 512kx32bit
Operating voltage: 2.4...3.6V
Access time: 10ns
Case: TFBGA90
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
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IS61LPS12836EC-200B3LI-TR IS61LPS12836EC-200B3LI.pdf
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 3.1ns; TFBGA165
Mounting: SMD
Operating temperature: -40...85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Kind of interface: parallel
Case: TFBGA165
Access time: 3.1ns
Operating voltage: 3.3V
Memory: 4.5Mb SRAM
Memory organisation: 128kx36bit
Kind of package: reel; tape
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IS61LPS12836EC-200TQLI IS61LPS12836EC-200B3LI.pdf
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 3.1ns; QFP100
Mounting: SMD
Operating temperature: -40...85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Kind of interface: parallel
Case: QFP100
Access time: 3.1ns
Operating voltage: 3.3V
Memory: 4.5Mb SRAM
Memory organisation: 128kx36bit
Kind of package: in-tray; tube
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IS61NLF12836A-7.5TQLI IS61NLF12836A-7.5TQLI.pdf
IS61NLF12836A-7.5TQLI
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 7.5ns; TQFP100
Mounting: SMD
Operating temperature: -40...85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Kind of interface: parallel
Case: TQFP100
Access time: 7.5ns
Operating voltage: 3.3V
Memory: 4.5Mb SRAM
Memory organisation: 128kx36bit
Kind of package: in-tray; tube
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IS61NLF12836A-7.5TQLI-TR IS61NLF12836A-7.5TQLI.pdf
IS61NLF12836A-7.5TQLI-TR
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 7.5ns; TQFP100
Mounting: SMD
Operating temperature: -40...85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Kind of interface: parallel
Case: TQFP100
Access time: 7.5ns
Operating voltage: 3.3V
Memory: 4.5Mb SRAM
Memory organisation: 128kx36bit
Kind of package: reel; tape
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IS61NLP12836B-200TQLI IS61NLP12836B-200TQLI.pdf
IS61NLP12836B-200TQLI
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 3.1ns; TQFP100
Mounting: SMD
Operating temperature: -40...85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Kind of interface: parallel
Case: TQFP100
Access time: 3.1ns
Operating voltage: 3.3V
Memory: 4.5Mb SRAM
Memory organisation: 128kx36bit
Kind of package: in-tray; tube
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IS61NLP12836B-200TQLI-TR IS61NLP12836B-200TQLI.pdf
IS61NLP12836B-200TQLI-TR
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 3.1ns; TQFP100
Mounting: SMD
Operating temperature: -40...85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Kind of interface: parallel
Case: TQFP100
Access time: 3.1ns
Operating voltage: 3.3V
Memory: 4.5Mb SRAM
Memory organisation: 128kx36bit
Kind of package: reel; tape
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IS61NLP12836EC-200B3LI IS61NLP12836EC-200B3LI.pdf
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 3.1ns; TFBGA165
Mounting: SMD
Operating temperature: -40...85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Kind of interface: parallel
Case: TFBGA165
Access time: 3.1ns
Operating voltage: 3.3V
Memory: 4.5Mb SRAM
Memory organisation: 128kx36bit
Kind of package: in-tray; tube
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IS61NLP12836EC-200B3LI-TR IS61NLP12836EC-200B3LI.pdf
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 3.1ns; TFBGA165
Mounting: SMD
Operating temperature: -40...85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Kind of interface: parallel
Case: TFBGA165
Access time: 3.1ns
Operating voltage: 3.3V
Memory: 4.5Mb SRAM
Memory organisation: 128kx36bit
Kind of package: reel; tape
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IS25LP016D-JULE-TR IS25LP016D-JBLA3.pdf
Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 16MbFLASH; DTR,QPI,SPI; 133MHz; 2.3÷3.6V; USON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: DTR; QPI; SPI
Operating frequency: 133MHz
Operating voltage: 2.3...3.6V
Case: USON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
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IS25LP080D-JULE-TR IS25LP080D-JBLE.pdf
Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 8MbFLASH; DTR,QPI,SPI; 133MHz; 2.3÷3.6V; USON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 8Mb FLASH
Interface: DTR; QPI; SPI
Operating frequency: 133MHz
Operating voltage: 2.3...3.6V
Case: USON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
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IS25WP016D-JULE-TR IS25LP016D-JBLA3.pdf
Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 16MbFLASH; DTR,QPI,SPI; 133MHz; 1.65÷1.95V
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: DTR; QPI; SPI
Operating frequency: 133MHz
Operating voltage: 1.65...1.95V
Case: USON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
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IS25WP080D-JULE-TR IS25LP080D-JBLE.pdf
Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 8MbFLASH; DTR,QPI,SPI; 133MHz; 1.65÷1.95V; USON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 8Mb FLASH
Interface: DTR; QPI; SPI
Operating frequency: 133MHz
Operating voltage: 1.65...1.95V
Case: USON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
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IS43LD32160A-25BLI IS43LD16320A-25BLI.pdf
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 4Mx32bitx4; 400MHz; 18ns; TFBGA134
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Kind of memory: LPDDR2; SDRAM
Kind of interface: parallel
Case: TFBGA134
Access time: 18ns
Supply voltage: 1.14...1.3V DC; 1.7...1.95V DC
Clock frequency: 400MHz
Memory: 512Mb DRAM
Memory organisation: 4Mx32bitx4
Type of integrated circuit: DRAM memory
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IS43LD32160A-25BLI-TR IS43LD16320A-25BLI.pdf
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 4Mx32bitx4; 400MHz; 18ns; TFBGA134
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of memory: LPDDR2; SDRAM
Kind of interface: parallel
Case: TFBGA134
Access time: 18ns
Supply voltage: 1.14...1.3V DC; 1.7...1.95V DC
Clock frequency: 400MHz
Memory: 512Mb DRAM
Memory organisation: 4Mx32bitx4
Type of integrated circuit: DRAM memory
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IS25WQ040-JNLE IS25WQ040-JNLE.pdf
IS25WQ040-JNLE
Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 4MbFLASH; SPI; 104MHz; 1.65÷1.95V; SOP8; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 4Mb FLASH
Interface: SPI
Kind of interface: serial
Mounting: SMD
Operating frequency: 104MHz
Case: SOP8
Operating temperature: -40...105°C
Operating voltage: 1.65...1.95V
на замовлення 37 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
11+40.85 грн
25+40.68 грн
Мінімальне замовлення: 11
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IS61LV25616AL-10TL description IS61LV25616AL-10BLI.pdf
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 3.3V; 10ns; TSOP44 II; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Operating voltage: 3.3V
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray; tube
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IS61LV2568L-10KLI 61LV2568L.pdf
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 3.3V; 10ns; SOJ36; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Operating voltage: 3.3V
Access time: 10ns
Case: SOJ36
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
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IS61LV25616AL-10BLI IS61LV25616AL-10BLI.pdf
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 3.3V; 10ns; miniBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Operating voltage: 3.3V
Access time: 10ns
Case: miniBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
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IS61LV2568L-10KLI-TR 61LV2568L.pdf
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 3.3V; 10ns; SOJ36; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Operating voltage: 3.3V
Access time: 10ns
Case: SOJ36
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
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IS61LV25616AL-10BLI-TR IS61LV25616AL-10BLI.pdf
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 3.3V; 10ns; miniBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Operating voltage: 3.3V
Access time: 10ns
Case: miniBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
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IS61LV25616AL-10TL-TR IS61LV25616AL-10BLI.pdf
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 3.3V; 10ns; TSOP44 II; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Operating voltage: 3.3V
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel; tape
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IS61LV256AL-10JLI-TR 61LV256AL.pdf
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 5V; 10ns; SOJ28; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 256kb SRAM
Memory organisation: 32kx8bit
Operating voltage: 5V
Access time: 10ns
Case: SOJ28
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
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IS61LV256AL-10TLI-TR 61LV256AL.pdf
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 3.3V; 10ns; TSOP28; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 256kb SRAM
Memory organisation: 32kx8bit
Operating voltage: 3.3V
Access time: 10ns
Case: TSOP28
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
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IS61LV25616AL-10TLI-TR 61LV25616AL.pdf
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 3.3V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Operating voltage: 3.3V
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
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IS43QR16512A-083TBL IS43QR16512A-083TBL.pdf
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8GbDRAM; 512Mx16bit; 14.16ns; TWBGA96; 0÷95°C
Memory: 8Gb DRAM
Supply voltage: 1.2V DC
Kind of memory: DDR4; SDRAM
Kind of package: in-tray; tube
Type of integrated circuit: DRAM memory
Case: TWBGA96
Memory organisation: 512Mx16bit
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...95°C
Access time: 14.16ns
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IS43QR16512A-083TBLI IS43QR16512A-083TBL.pdf
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8GbDRAM; 512Mx16bit; 14.16ns; TWBGA96; -40÷95°C
Memory: 8Gb DRAM
Supply voltage: 1.2V DC
Kind of memory: DDR4; SDRAM
Kind of package: in-tray; tube
Type of integrated circuit: DRAM memory
Case: TWBGA96
Memory organisation: 512Mx16bit
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...95°C
Access time: 14.16ns
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IS34MW01G164-BLI IS34MW01G164-BLI.pdf
Виробник: ISSI
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; parallel 8bit; VFBGA63; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NAND
Memory: 1Gb FLASH
Operating voltage: 1.7...1.95V
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Interface: parallel 8bit
Case: VFBGA63
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IS34ML02G084-TLI IS34ML02G084-BLI.pdf
IS34ML02G084-TLI
Виробник: ISSI
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 2GbFLASH; parallel 8bit; TSOP48; parallel
Mounting: SMD
Type of integrated circuit: FLASH memory
Kind of interface: parallel
Case: TSOP48
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
Memory: 2Gb FLASH
Kind of memory: NAND
Interface: parallel 8bit
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IS34ML04G081-TLI IS34ML04G081-TLI.pdf
Виробник: ISSI
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 4GbFLASH; parallel 8bit; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NAND
Memory: 4Gb FLASH
Operating voltage: 2.7...3.6V
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Interface: parallel 8bit
Case: TSOP48
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IS62WV1288BLL-55TLI is62wv1288bll.pdf
IS62WV1288BLL-55TLI
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 3.3V; 55ns; TSOP32; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Operating voltage: 3.3V
Access time: 55ns
Case: TSOP32
Kind of interface: parallel
Mounting: SMD
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IS62WV1288BLL-55QLI 62WV1288ALL.pdf
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.5÷3.6V; 55ns; SOP32
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Operating voltage: 2.5...3.6V
Access time: 55ns
Case: SOP32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
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IS62WV1288BLL-55QLI-TR 62WV1288ALL.pdf
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.5÷3.6V; 55ns; TSOP32 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Operating voltage: 2.5...3.6V
Access time: 55ns
Case: TSOP32 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
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IS62WV1288BLL-55TLI-TR 62WV1288ALL.pdf
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.5÷3.6V; 55ns; TSOP32
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Operating voltage: 2.5...3.6V
Access time: 55ns
Case: TSOP32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
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IS25LP016D-JBLE IS25LP016D-JBLA3.pdf
IS25LP016D-JBLE
Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 16MbFLASH; DTR,QPI,SPI; 133MHz; 2.3÷3.6V; SO8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: DTR; QPI; SPI
Operating frequency: 133MHz
Operating voltage: 2.3...3.6V
Case: SO8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
на замовлення 40 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
7+67.61 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
IS62C256AL-45TLI 62-65C256AL.pdf
IS62C256AL-45TLI
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 5V; 45ns; TSOP28; parallel
Mounting: SMD
Case: TSOP28
Operating temperature: -40...85°C
Access time: 45ns
Operating voltage: 5V
Memory organisation: 32kx8bit
Memory: 256kb SRAM
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Kind of interface: parallel
на замовлення 59 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
5+106.37 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
IS61C256AL-12TLI 61C256AL.pdf
IS61C256AL-12TLI
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 5V; 12ns; TSOP28; parallel
Mounting: SMD
Case: TSOP28
Operating temperature: -40...85°C
Access time: 12ns
Operating voltage: 5V
Memory organisation: 32kx8bit
Memory: 256kb SRAM
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Kind of interface: parallel
на замовлення 64 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
5+108.17 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
IS61C256AL-12TLI-TR 61C256AL.pdf
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 5V; 12ns; TSOP28; parallel
Mounting: SMD
Case: TSOP28
Operating temperature: -40...85°C
Access time: 12ns
Operating voltage: 5V
Memory organisation: 32kx8bit
Memory: 256kb SRAM
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Kind of interface: parallel
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IS62C256AL-45TLI-TR 62-65C256AL.pdf
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 5V; 45ns; TSOP28; parallel
Mounting: SMD
Case: TSOP28
Operating temperature: -40...85°C
Access time: 45ns
Operating voltage: 5V
Memory organisation: 32kx8bit
Memory: 256kb SRAM
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Kind of interface: parallel
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IS61C64AL-10TLI 61C64AL.pdf
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 64kbSRAM; 8kx8bit; 5V; 10ns; TSOP28; parallel
Mounting: SMD
Case: TSOP28
Operating temperature: -40...85°C
Access time: 10ns
Operating voltage: 5V
Memory organisation: 8kx8bit
Memory: 64kb SRAM
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Kind of interface: parallel
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IS61C64AL-10TLI-TR 61C64AL.pdf
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 64kbSRAM; 8kx8bit; 5V; 10ns; TSOP28; parallel
Mounting: SMD
Case: TSOP28
Operating temperature: -40...85°C
Access time: 10ns
Operating voltage: 5V
Memory organisation: 8kx8bit
Memory: 64kb SRAM
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Kind of interface: parallel
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IS62LV256AL-45TLI 62-65LV256AL.pdf
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 3.3V; 45ns; TSOP28; parallel
Mounting: SMD
Case: TSOP28
Operating temperature: -40...85°C
Access time: 45ns
Operating voltage: 3.3V
Memory organisation: 32kx8bit
Memory: 256kb SRAM
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Kind of interface: parallel
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IS61C25616AL-10TLI 61-64C25616AL-AS.pdf
IS61C25616AL-10TLI
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 5V; 10ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 5V
на замовлення 23 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+596.76 грн
5+499.73 грн
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IS61LPD51236A-200TQLI IS61LPD51236A-200TQLI.pdf
IS61LPD51236A-200TQLI
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 3.3V; 3.1ns; TQFP100
Type of integrated circuit: SRAM memory
Case: TQFP100
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Kind of interface: parallel
Kind of memory: SRAM
Access time: 3.1ns
Operating voltage: 3.3V
Memory: 18Mb SRAM
Memory organisation: 512kx36bit
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IS61LPS25636A-200B3LI IS61LPS25636A-200B3LI.pdf
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 3.5ns; BGA165; parallel
Type of integrated circuit: SRAM memory
Case: BGA165
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Kind of interface: parallel
Kind of memory: SRAM
Access time: 3.5ns
Operating voltage: 3.3V
Memory: 9Mb SRAM
Memory organisation: 256kx36bit
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IS61LPS25636A-200B3LI-TR IS61LPS25636A-200B3LI.pdf
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 3.5ns; BGA165; parallel
Type of integrated circuit: SRAM memory
Case: BGA165
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of interface: parallel
Kind of memory: SRAM
Access time: 3.5ns
Operating voltage: 3.3V
Memory: 9Mb SRAM
Memory organisation: 256kx36bit
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IS61LPS25636A-200TQLI IS61LPS25636A-200B3LI.pdf
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 3.5ns; QFP100; parallel
Type of integrated circuit: SRAM memory
Case: QFP100
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Kind of interface: parallel
Kind of memory: SRAM
Access time: 3.5ns
Operating voltage: 3.3V
Memory: 9Mb SRAM
Memory organisation: 256kx36bit
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IS61LPS25636A-200TQLI-TR IS61LPS25636A-200B3LI.pdf
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 3.5ns; QFP100; parallel
Type of integrated circuit: SRAM memory
Case: QFP100
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of interface: parallel
Kind of memory: SRAM
Access time: 3.5ns
Operating voltage: 3.3V
Memory: 9Mb SRAM
Memory organisation: 256kx36bit
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IS61NLP25636A-200B3LI IS61NLP25636A-200B3LI.pdf
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 200ns; PBGA165
Type of integrated circuit: SRAM memory
Case: PBGA165
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Kind of interface: parallel
Kind of memory: SRAM
Access time: 200ns
Operating voltage: 3.3V
Memory: 9Mb SRAM
Memory organisation: 256kx36bit
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IS61QDB42M36A-300M3L IS61QDB42M36A-300M3L.pdf
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; 1.8V; LFBGA165; parallel
Type of integrated circuit: SRAM memory
Case: LFBGA165
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray; tube
Kind of interface: parallel
Kind of memory: SRAM
Operating voltage: 1.8V
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
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IS62WV10248BLL-55BLI IS62WV10248BLL-55BLI.pdf
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 1Mx8bit; 2.5÷3.6V; 55ns; miniBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 1Mx8bit
Operating voltage: 2.5...3.6V
Access time: 55ns
Case: miniBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
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IS62WV10248BLL-55BLI-TR IS62WV10248BLL-55BLI.pdf
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 1Mx8bit; 2.5÷3.6V; 55ns; miniBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 1Mx8bit
Operating voltage: 2.5...3.6V
Access time: 55ns
Case: miniBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
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IS42S16800F-6TLI IS42S16800F-5TLI.pdf
IS42S16800F-6TLI
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TSOP54 II
Kind of package: in-tray; tube
Type of integrated circuit: DRAM memory
Kind of interface: parallel
Kind of memory: SDRAM
Mounting: SMD
Case: TSOP54 II
Operating temperature: -40...85°C
Access time: 6ns
Supply voltage: 3...3.6V DC
Memory: 128Mb DRAM
Clock frequency: 166MHz
Memory organisation: 2Mx16bitx4
на замовлення 5 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
2+347.96 грн
5+284.60 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IS45S16800F-7TLA1 IS42S16800F-5TLI.pdf
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 143MHz; 7ns; TSOP54 II
Kind of package: in-tray; tube
Type of integrated circuit: DRAM memory
Kind of interface: parallel
Kind of memory: SDRAM
Mounting: SMD
Case: TSOP54 II
Operating temperature: -40...85°C
Access time: 7ns
Supply voltage: 3...3.6V DC
Memory: 128Mb DRAM
Clock frequency: 143MHz
Memory organisation: 2Mx16bitx4
товару немає в наявності
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IS45S16800F-7TLA2 IS42S16800F-5TLI.pdf
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 143MHz; 7ns; TSOP54 II
Kind of package: in-tray; tube
Type of integrated circuit: DRAM memory
Kind of interface: parallel
Kind of memory: SDRAM
Mounting: SMD
Case: TSOP54 II
Operating temperature: -40...105°C
Access time: 7ns
Supply voltage: 3...3.6V DC
Memory: 128Mb DRAM
Clock frequency: 143MHz
Memory organisation: 2Mx16bitx4
товару немає в наявності
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IS42S16800F-5TLI IS42S16800F-5TLI.pdf
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 200MHz; 5ns; TSOP54 II
Kind of package: in-tray; tube
Type of integrated circuit: DRAM memory
Kind of interface: parallel
Kind of memory: SDRAM
Mounting: SMD
Case: TSOP54 II
Operating temperature: -40...85°C
Access time: 5ns
Supply voltage: 3...3.6V DC
Memory: 128Mb DRAM
Clock frequency: 200MHz
Memory organisation: 2Mx16bitx4
товару немає в наявності
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IS42S16800F-5TLI-TR IS42S16800F-5TLI.pdf
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 200MHz; 5ns; TSOP54 II
Kind of package: reel; tape
Type of integrated circuit: DRAM memory
Kind of interface: parallel
Kind of memory: SDRAM
Mounting: SMD
Case: TSOP54 II
Operating temperature: -40...85°C
Access time: 5ns
Supply voltage: 3...3.6V DC
Memory: 128Mb DRAM
Clock frequency: 200MHz
Memory organisation: 2Mx16bitx4
товару немає в наявності
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IS42S16800F-6BL IS42S16800F-5TLI.pdf
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TFBGA54
Kind of package: in-tray; tube
Type of integrated circuit: DRAM memory
Kind of interface: parallel
Kind of memory: SDRAM
Mounting: SMD
Case: TFBGA54
Operating temperature: 0...70°C
Access time: 6ns
Supply voltage: 3...3.6V DC
Memory: 128Mb DRAM
Clock frequency: 166MHz
Memory organisation: 2Mx16bitx4
товару немає в наявності
В кошику  од. на суму  грн.
IS42S16800F-6BL-TR IS42S16800F-5TLI.pdf
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TFBGA54
Kind of package: reel; tape
Type of integrated circuit: DRAM memory
Kind of interface: parallel
Kind of memory: SDRAM
Mounting: SMD
Case: TFBGA54
Operating temperature: 0...70°C
Access time: 6ns
Supply voltage: 3...3.6V DC
Memory: 128Mb DRAM
Clock frequency: 166MHz
Memory organisation: 2Mx16bitx4
товару немає в наявності
В кошику  од. на суму  грн.
IS61WV51232BLL-10BLI IS61WV51232BLL-10BLI.pdf
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 512kx32bit; 2.4÷3.6V; 10ns; TFBGA90
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 512kx32bit
Operating voltage: 2.4...3.6V
Access time: 10ns
Case: TFBGA90
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
товару немає в наявності
В кошику  од. на суму  грн.
IS61WV51232BLL-10BLI-TR IS61WV51232BLL-10BLI.pdf
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 512kx32bit; 2.4÷3.6V; 10ns; TFBGA90
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 512kx32bit
Operating voltage: 2.4...3.6V
Access time: 10ns
Case: TFBGA90
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
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