Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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HTZ170C2.8K | IXYS | Description: DIODE MODULE 2.8KV 10A |
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HTZ170C2K | IXYS | Description: DIODE MODULE 2KV 10A |
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HTZ180D22K | IXYS | Description: DIODE MODULE 22KV 1.3A |
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HTZ180D26K | IXYS | Description: DIODE MODULE 26KV 1.3A |
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HTZ180D30K | IXYS |
Description: DIODE MODULE 30KV 1.3A Packaging: Box Package / Case: Module Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 1.3A Supplier Device Package: Module Voltage - DC Reverse (Vr) (Max): 30000 V Voltage - Forward (Vf) (Max) @ If: 22 V @ 2 A Current - Reverse Leakage @ Vr: 500 µA @ 30000 V |
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HTZ180D35K | IXYS | Description: DIODE MODULE 35KV 1.3A |
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HTZ240F10K | IXYS |
Description: DIODE MODULE 10KV 1.7A Packaging: Box Package / Case: Module Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 1.7A Supplier Device Package: Module Voltage - DC Reverse (Vr) (Max): 10000 V Voltage - Forward (Vf) (Max) @ If: 10 V @ 2 A Current - Reverse Leakage @ Vr: 500 µA @ 10000 V |
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HTZ240F12K | IXYS | Description: DIODE MODULE 12KV 1.7A |
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HTZ240F14K | IXYS | Description: DIODE MODULE 14KV 1.7A |
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HTZ240F16K | IXYS | Description: DIODE MODULE 16KV 1.7A |
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HTZ250G28K | IXYS | Description: DIODE MODULE 28KV 2.7A |
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HTZ250G33K | IXYS | Description: DIODE MODULE 33.6KV 2.7A |
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HTZ250G39K | IXYS | Description: DIODE MODULE 39.2KV 2.7A |
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HTZ250G44K | IXYS | Description: DIODE MODULE 44.8KV 2.7A |
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HTZ260G14K | IXYS |
Description: DIODE MODULE 14KV 4.7A Packaging: Box Package / Case: Module Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 4.7A Supplier Device Package: Module Voltage - DC Reverse (Vr) (Max): 14000 V Voltage - Forward (Vf) (Max) @ If: 16 V @ 12 A Current - Reverse Leakage @ Vr: 500 µA @ 14000 V |
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HTZ260G16K | IXYS |
Description: DIODE MODULE 16.8KV 4.7A Packaging: Box Package / Case: Module Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 4.7A Supplier Device Package: Module Voltage - DC Reverse (Vr) (Max): 16800 V Voltage - Forward (Vf) (Max) @ If: 16 V @ 12 A Current - Reverse Leakage @ Vr: 500 µA @ 16800 V |
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HTZ260G19K | IXYS |
Description: DIODE MODULE 19.6KV 4.7A Packaging: Box Package / Case: Module Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 4.7A Supplier Device Package: Module Voltage - DC Reverse (Vr) (Max): 19600 V Voltage - Forward (Vf) (Max) @ If: 16 V @ 12 A Current - Reverse Leakage @ Vr: 500 µA @ 19600 V |
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HTZ260G22K | IXYS |
Description: DIODE MODULE 22.4KV 4.7A Packaging: Box Package / Case: Module Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 4.7A Supplier Device Package: Module Voltage - DC Reverse (Vr) (Max): 22400 V Voltage - Forward (Vf) (Max) @ If: 16 V @ 12 A Current - Reverse Leakage @ Vr: 500 µA @ 22400 V |
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HTZ270H40K | IXYS | Description: DIODE MODULE 40KV 3.4A |
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HTZ270H56K | IXYS | Description: DIODE MODULE 56KV 3.4A |
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HTZ270H64K | IXYS | Description: DIODE MODULE 64KV 3.4A |
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HTZ280H20K | IXYS |
Description: DIODE MODULE 20KV 4.7A Packaging: Box Package / Case: Module Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 4.7A Supplier Device Package: Module Voltage - DC Reverse (Vr) (Max): 20000 V Voltage - Forward (Vf) (Max) @ If: 23 V @ 12 A Current - Reverse Leakage @ Vr: 500 µA @ 20000 V |
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HTZ280H24K | IXYS | Description: DIODE MODULE 24KV 4.7A |
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HTZ280H28K | IXYS | Description: DIODE MODULE 28KV 4.7A |
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HTZ280H32K | IXYS | Description: DIODE MODULE 32KV 4.7A |
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HVL900-12IO1 | IXYS | Description: IC CTLR AC 900A 1200V HVL |
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HVL900-14IO1 | IXYS | Description: IC CTLR AC 900A 1400V HVL |
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HVL900-16IO1 | IXYS | Description: IC CTLR AC 900A 1600V HVL |
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HVL900-18IO1 | IXYS | Description: IC CTLR AC 900A 1800V HVL |
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IX2A11P1 | IXYS | Description: IC DRVR HALF BRIDGE GATE 8DIP |
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IX2A11S1 | IXYS | Description: IC DRVR HALF BRIDGE GATE 8-SOIC |
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IX2A11S1T/R | IXYS | Description: IC DRVR HALF BRIDGE GATE 8-SOIC |
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IX2B11P7 | IXYS | Description: IC DRVR HALF BRIDGE GATE 14DIP |
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IX2B11S7 | IXYS | Description: IC DRVR HALF BRIDGE GATE 14-SOIC |
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IX2B11S7T/R | IXYS | Description: IC DRVR HALF BRIDGE GATE 14-SOIC |
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IX2C11P1 | IXYS | Description: IC DRVR HALF BRIDGE GATE 8DIP |
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IX2C11S1 | IXYS | Description: IC DRVR HALF BRIDGE GATE 8-SOIC |
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IX2C11S1T/R | IXYS | Description: IC DRVR HALF BRIDGE GATE 8-SOIC |
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IX2D11P7 | IXYS | Description: IC DRVR HALF BRIDGE GATE 14DIP |
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IX2D11S7 | IXYS | Description: IC DRVR HALF BRIDGE GATE 14-SOIC |
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IX2D11S7T/R | IXYS | Description: IC DRVR HALF BRIDGE GATE 14-SOIC |
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IX2R11M6 | IXYS | Description: IC DRVR HALF BRIDGE 2A 16-MLP |
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IX2R11M6T/R | IXYS | Description: IC DRVR HALF BRIDGE 2A 16-MLP |
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IX2R11P7 | IXYS | Description: IC DRVR HALF BRIDGE 2A 14DIP |
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IX2R11S3 | IXYS | Description: IC DRVR HALF BRIDGE 2A 16-SOIC |
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IX2R11S3T/R | IXYS | Description: IC DRVR HALF BRIDGE 2A 16-SOIC |
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IX4R11M6 | IXYS | Description: IC DRVR HALF BRIDGE 4A 16-MLP |
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IX4R11M6T/R | IXYS | Description: IC DRVR HALF BRIDGE 4A 16-MLP |
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IX4R11P7 | IXYS | Description: IC DRVR HALF BRIDGE 4A 14DIP |
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IX4R11S3 | IXYS | Description: IC DRVR HALF BRIDGE 4A 16-SOIC |
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IX4R11S3T/R | IXYS | Description: IC DRVR HALF BRIDGE 4A 16-SOIC |
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IX6R11M6 | IXYS | Description: IC DRVR HALF BRIDGE 4A 16-MLP |
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IX6R11M6T/R | IXYS | Description: IC DRVR HALF BRIDGE 4A 16-MLP |
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IX6R11S3T/R | IXYS | Description: IC GATE DRVR HALF-BRIDGE 16SOIC |
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IX6R11S6T/R | IXYS | Description: IC GATE DRVR HALF-BRIDGE 18SOIC |
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IX6S11S6 | IXYS | Description: IC DRVR HALF BRIDGE 6A 18-SOIC |
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IX6S11S6T/R | IXYS | Description: IC DRVR HALF BRIDGE 6A 18-SOIC |
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IXA531L4 | IXYS |
Description: IC GATE DRVR HALF-BRIDGE 44PLCC Packaging: Tape & Reel (TR) Package / Case: 44-LCC (J-Lead) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TJ) Voltage - Supply: 8V ~ 35V Input Type: Inverting High Side Voltage - Max (Bootstrap): 650 V Supplier Device Package: 44-PLCC (16.54x16.54) Rise / Fall Time (Typ): 125ns, 50ns Channel Type: 3-Phase Driven Configuration: Half-Bridge Number of Drivers: 6 Gate Type: IGBT, N-Channel, P-Channel MOSFET Logic Voltage - VIL, VIH: 0.8V, 3V Current - Peak Output (Source, Sink): 600mA, 600mA Part Status: Obsolete DigiKey Programmable: Not Verified |
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IXA531L4T/R | IXYS |
Description: IC GATE DRVR HALF-BRIDGE 44PLCC Packaging: Tape & Reel (TR) Package / Case: 44-LCC (J-Lead) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TJ) Voltage - Supply: 8V ~ 35V Input Type: Inverting High Side Voltage - Max (Bootstrap): 650 V Supplier Device Package: 44-PLCC (16.54x16.54) Rise / Fall Time (Typ): 125ns, 50ns Channel Type: 3-Phase Driven Configuration: Half-Bridge Number of Drivers: 6 Gate Type: IGBT, N-Channel, P-Channel MOSFET Logic Voltage - VIL, VIH: 0.8V, 3V Current - Peak Output (Source, Sink): 600mA, 600mA Part Status: Obsolete DigiKey Programmable: Not Verified |
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IXA531S10 | IXYS | Description: IC BRIDGE DRVR 3PH 500MA 48-MLP |
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HTZ180D30K |
Виробник: IXYS
Description: DIODE MODULE 30KV 1.3A
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 1.3A
Supplier Device Package: Module
Voltage - DC Reverse (Vr) (Max): 30000 V
Voltage - Forward (Vf) (Max) @ If: 22 V @ 2 A
Current - Reverse Leakage @ Vr: 500 µA @ 30000 V
Description: DIODE MODULE 30KV 1.3A
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 1.3A
Supplier Device Package: Module
Voltage - DC Reverse (Vr) (Max): 30000 V
Voltage - Forward (Vf) (Max) @ If: 22 V @ 2 A
Current - Reverse Leakage @ Vr: 500 µA @ 30000 V
товар відсутній
HTZ240F10K |
Виробник: IXYS
Description: DIODE MODULE 10KV 1.7A
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 1.7A
Supplier Device Package: Module
Voltage - DC Reverse (Vr) (Max): 10000 V
Voltage - Forward (Vf) (Max) @ If: 10 V @ 2 A
Current - Reverse Leakage @ Vr: 500 µA @ 10000 V
Description: DIODE MODULE 10KV 1.7A
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 1.7A
Supplier Device Package: Module
Voltage - DC Reverse (Vr) (Max): 10000 V
Voltage - Forward (Vf) (Max) @ If: 10 V @ 2 A
Current - Reverse Leakage @ Vr: 500 µA @ 10000 V
товар відсутній
HTZ260G14K |
Виробник: IXYS
Description: DIODE MODULE 14KV 4.7A
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 4.7A
Supplier Device Package: Module
Voltage - DC Reverse (Vr) (Max): 14000 V
Voltage - Forward (Vf) (Max) @ If: 16 V @ 12 A
Current - Reverse Leakage @ Vr: 500 µA @ 14000 V
Description: DIODE MODULE 14KV 4.7A
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 4.7A
Supplier Device Package: Module
Voltage - DC Reverse (Vr) (Max): 14000 V
Voltage - Forward (Vf) (Max) @ If: 16 V @ 12 A
Current - Reverse Leakage @ Vr: 500 µA @ 14000 V
товар відсутній
HTZ260G16K |
Виробник: IXYS
Description: DIODE MODULE 16.8KV 4.7A
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 4.7A
Supplier Device Package: Module
Voltage - DC Reverse (Vr) (Max): 16800 V
Voltage - Forward (Vf) (Max) @ If: 16 V @ 12 A
Current - Reverse Leakage @ Vr: 500 µA @ 16800 V
Description: DIODE MODULE 16.8KV 4.7A
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 4.7A
Supplier Device Package: Module
Voltage - DC Reverse (Vr) (Max): 16800 V
Voltage - Forward (Vf) (Max) @ If: 16 V @ 12 A
Current - Reverse Leakage @ Vr: 500 µA @ 16800 V
товар відсутній
HTZ260G19K |
Виробник: IXYS
Description: DIODE MODULE 19.6KV 4.7A
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 4.7A
Supplier Device Package: Module
Voltage - DC Reverse (Vr) (Max): 19600 V
Voltage - Forward (Vf) (Max) @ If: 16 V @ 12 A
Current - Reverse Leakage @ Vr: 500 µA @ 19600 V
Description: DIODE MODULE 19.6KV 4.7A
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 4.7A
Supplier Device Package: Module
Voltage - DC Reverse (Vr) (Max): 19600 V
Voltage - Forward (Vf) (Max) @ If: 16 V @ 12 A
Current - Reverse Leakage @ Vr: 500 µA @ 19600 V
товар відсутній
HTZ260G22K |
Виробник: IXYS
Description: DIODE MODULE 22.4KV 4.7A
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 4.7A
Supplier Device Package: Module
Voltage - DC Reverse (Vr) (Max): 22400 V
Voltage - Forward (Vf) (Max) @ If: 16 V @ 12 A
Current - Reverse Leakage @ Vr: 500 µA @ 22400 V
Description: DIODE MODULE 22.4KV 4.7A
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 4.7A
Supplier Device Package: Module
Voltage - DC Reverse (Vr) (Max): 22400 V
Voltage - Forward (Vf) (Max) @ If: 16 V @ 12 A
Current - Reverse Leakage @ Vr: 500 µA @ 22400 V
товар відсутній
HTZ280H20K |
Виробник: IXYS
Description: DIODE MODULE 20KV 4.7A
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 4.7A
Supplier Device Package: Module
Voltage - DC Reverse (Vr) (Max): 20000 V
Voltage - Forward (Vf) (Max) @ If: 23 V @ 12 A
Current - Reverse Leakage @ Vr: 500 µA @ 20000 V
Description: DIODE MODULE 20KV 4.7A
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 4.7A
Supplier Device Package: Module
Voltage - DC Reverse (Vr) (Max): 20000 V
Voltage - Forward (Vf) (Max) @ If: 23 V @ 12 A
Current - Reverse Leakage @ Vr: 500 µA @ 20000 V
товар відсутній
IXA531L4 |
Виробник: IXYS
Description: IC GATE DRVR HALF-BRIDGE 44PLCC
Packaging: Tape & Reel (TR)
Package / Case: 44-LCC (J-Lead)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 8V ~ 35V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: 44-PLCC (16.54x16.54)
Rise / Fall Time (Typ): 125ns, 50ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 600mA, 600mA
Part Status: Obsolete
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 44PLCC
Packaging: Tape & Reel (TR)
Package / Case: 44-LCC (J-Lead)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 8V ~ 35V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: 44-PLCC (16.54x16.54)
Rise / Fall Time (Typ): 125ns, 50ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 600mA, 600mA
Part Status: Obsolete
DigiKey Programmable: Not Verified
товар відсутній
IXA531L4T/R |
Виробник: IXYS
Description: IC GATE DRVR HALF-BRIDGE 44PLCC
Packaging: Tape & Reel (TR)
Package / Case: 44-LCC (J-Lead)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 8V ~ 35V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: 44-PLCC (16.54x16.54)
Rise / Fall Time (Typ): 125ns, 50ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 600mA, 600mA
Part Status: Obsolete
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 44PLCC
Packaging: Tape & Reel (TR)
Package / Case: 44-LCC (J-Lead)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 8V ~ 35V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: 44-PLCC (16.54x16.54)
Rise / Fall Time (Typ): 125ns, 50ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 600mA, 600mA
Part Status: Obsolete
DigiKey Programmable: Not Verified
товар відсутній