| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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CPC3730CTR | IXYS |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 350V; 0.14A; 1.4W; SOT89 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 350V Drain current: 0.14A Power dissipation: 1.4W Case: SOT89 On-state resistance: 35Ω Mounting: SMD Kind of package: reel; tape Kind of channel: depletion Gate-source voltage: ±15V |
на замовлення 23 шт: термін постачання 21-30 дні (днів) |
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IXTP3N50D2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 3A; 125W; TO220AB; 24ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 3A Power dissipation: 125W Case: TO220AB On-state resistance: 1.5Ω Mounting: THT Gate charge: 1.07µC Kind of package: tube Kind of channel: depletion Reverse recovery time: 24ns |
на замовлення 275 шт: термін постачання 21-30 дні (днів) |
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IXTH50P10 | IXYS |
Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -50A; 300W; TO247-3; 180ns Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -50A Power dissipation: 300W Case: TO247-3 Gate-source voltage: ±20V On-state resistance: 55mΩ Mounting: THT Gate charge: 0.14µC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 180ns |
на замовлення 306 шт: термін постачання 21-30 дні (днів) |
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IXTT50P10 | IXYS |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -50A; 300W; TO268; 180ns Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -50A Power dissipation: 300W Case: TO268 Gate-source voltage: ±20V On-state resistance: 55mΩ Mounting: SMD Gate charge: 0.14µC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 180ns |
на замовлення 17 шт: термін постачання 21-30 дні (днів) |
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| CPC3730CTR |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 350V; 0.14A; 1.4W; SOT89
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 350V
Drain current: 0.14A
Power dissipation: 1.4W
Case: SOT89
On-state resistance: 35Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
Gate-source voltage: ±15V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 350V; 0.14A; 1.4W; SOT89
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 350V
Drain current: 0.14A
Power dissipation: 1.4W
Case: SOT89
On-state resistance: 35Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
Gate-source voltage: ±15V
на замовлення 23 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 64.47 грн |
| 11+ | 38.21 грн |
| IXTP3N50D2 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3A; 125W; TO220AB; 24ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3A
Power dissipation: 125W
Case: TO220AB
On-state resistance: 1.5Ω
Mounting: THT
Gate charge: 1.07µC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 24ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3A; 125W; TO220AB; 24ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3A
Power dissipation: 125W
Case: TO220AB
On-state resistance: 1.5Ω
Mounting: THT
Gate charge: 1.07µC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 24ns
на замовлення 275 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 275.54 грн |
| 10+ | 189.43 грн |
| IXTH50P10 |
|
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -50A; 300W; TO247-3; 180ns
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -50A
Power dissipation: 300W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 55mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 180ns
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -50A; 300W; TO247-3; 180ns
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -50A
Power dissipation: 300W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 55mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 180ns
на замовлення 306 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 816.02 грн |
| 10+ | 646.21 грн |
| 30+ | 606.02 грн |
| 120+ | 556.00 грн |
| 270+ | 529.76 грн |
| IXTT50P10 |
|
Виробник: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -50A; 300W; TO268; 180ns
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -50A
Power dissipation: 300W
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 55mΩ
Mounting: SMD
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 180ns
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -50A; 300W; TO268; 180ns
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -50A
Power dissipation: 300W
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 55mΩ
Mounting: SMD
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 180ns
на замовлення 17 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 731.24 грн |
| 3+ | 600.28 грн |
| 10+ | 538.78 грн |