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MCMA25PD1600TB IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BD80DD6A73ADE0C4&compId=MCMA25PD1600TB.pdf?ci_sign=736dc4ed2df1376efda2f070951405c5bea4b009 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 25A; TO240AA; Ufmax: 1.25V; bulk
Case: TO240AA
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Gate current: 55/80mA
Threshold on-voltage: 0.87V
Max. forward voltage: 1.25V
Load current: 25A
Max. load current: 40A
Max. forward impulse current: 0.4kA
Max. off-state voltage: 1.6kV
Kind of package: bulk
Type of semiconductor module: diode-thyristor
товару немає в наявності
В кошику  од. на суму  грн.
MCMA85PD1600TB IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BD811F443E64C0C4&compId=MCMA85PD1600TB.pdf?ci_sign=272e7fff698eb0479745f9579ed9728abdc529c3 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 85A; TO240AA; Ufmax: 1.18V; bulk
Case: TO240AA
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Gate current: 95/200mA
Threshold on-voltage: 0.85V
Max. forward voltage: 1.18V
Load current: 85A
Max. load current: 135A
Max. forward impulse current: 1.5kA
Max. off-state voltage: 1.6kV
Kind of package: bulk
Type of semiconductor module: diode-thyristor
товару немає в наявності
В кошику  од. на суму  грн.
MCMA110PD1600TB IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BD80B04D5E18E0C4&compId=MCMA110PD1600TB.pdf?ci_sign=4b039647ab9d7138ff56499a2acddc4f604ee922 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 110A; TO240AA; Ufmax: 1.21V; bulk
Case: TO240AA
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Gate current: 150/200mA
Threshold on-voltage: 0.85V
Max. forward voltage: 1.21V
Load current: 110A
Max. load current: 170A
Max. forward impulse current: 1.9kA
Max. off-state voltage: 1.6kV
Kind of package: bulk
Type of semiconductor module: diode-thyristor
товару немає в наявності
В кошику  од. на суму  грн.
IXFK100N65X2 IXFK100N65X2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A389E5CCA0EF7820&compId=IXFK(X)100N65X2.pdf?ci_sign=943e818235cb436b72c8d4fa8bbbd2fba5457b4b Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 100A; 1040W; TO264; 200ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 100A
Power dissipation: 1.04kW
Case: TO264
On-state resistance: 30mΩ
Mounting: THT
Gate charge: 183nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 200ns
на замовлення 3 шт:
термін постачання 21-30 дні (днів)
1+1056.91 грн
3+928.26 грн
В кошику  од. на суму  грн.
IXTA6N50D2 IXTA6N50D2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D44656080E1820&compId=IXTA(H%2CP)6N50D2.pdf?ci_sign=4402ac4ed2bcb4f9bf6d4b15eccc2d1eb120f187 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6A; 300W; TO263; 64ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 6A
Power dissipation: 300W
Case: TO263
On-state resistance: 0.5Ω
Mounting: SMD
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 64ns
на замовлення 300 шт:
термін постачання 21-30 дні (днів)
1+710.87 грн
2+468.10 грн
6+441.91 грн
В кошику  од. на суму  грн.
IXTH6N50D2 IXTH6N50D2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D44656080E1820&compId=IXTA(H%2CP)6N50D2.pdf?ci_sign=4402ac4ed2bcb4f9bf6d4b15eccc2d1eb120f187 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6A; 300W; TO247-3; 64ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 6A
Power dissipation: 300W
Case: TO247-3
On-state resistance: 0.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 64ns
на замовлення 215 шт:
термін постачання 21-30 дні (днів)
1+640.81 грн
3+379.24 грн
7+358.61 грн
В кошику  од. на суму  грн.
IXTP6N50D2 IXTP6N50D2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D44656080E1820&compId=IXTA(H%2CP)6N50D2.pdf?ci_sign=4402ac4ed2bcb4f9bf6d4b15eccc2d1eb120f187 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6A; 300W; TO220AB; 64ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 6A
Power dissipation: 300W
Case: TO220AB
On-state resistance: 0.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 64ns
на замовлення 160 шт:
термін постачання 21-30 дні (днів)
1+575.02 грн
3+349.09 грн
8+330.84 грн
В кошику  од. на суму  грн.
IXTP6N100D2 IXTP6N100D2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D45948322AD820&compId=IXTA(H%2CP)6N100D2.pdf?ci_sign=ae2f4eab8381be464d1f510c96b6fa260d11e708 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 6A; 300W; TO220AB; 41ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 6A
Power dissipation: 300W
Case: TO220AB
On-state resistance: 2.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 41ns
на замовлення 350 шт:
термін постачання 21-30 дні (днів)
1+669.86 грн
3+459.37 грн
6+434.77 грн
50+427.63 грн
В кошику  од. на суму  грн.
CPC3982TTR CPC3982TTR IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A6583C3D1118BF&compId=CPC3982.pdf?ci_sign=768e2d563e17ec093534afea6845d24c4cb589b3 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 0.15A; 0.4W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 0.15A
Power dissipation: 0.4W
Case: SOT23
On-state resistance: 380Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
Gate-source voltage: ±15V
на замовлення 2851 шт:
термін постачання 21-30 дні (днів)
11+41.87 грн
12+33.64 грн
49+19.20 грн
134+18.17 грн
1000+17.45 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
CPC5603CTR CPC5603CTR IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A67566F94DB8BF&compId=CPC5603.pdf?ci_sign=e714e258bc789b11f74bf228bdeffe81ffeed81b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 415V; 0.13A; 2.5W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 415V
Drain current: 0.13A
Power dissipation: 2.5W
Case: SOT223
On-state resistance: 14Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
Gate-source voltage: ±20V
на замовлення 315 шт:
термін постачання 21-30 дні (днів)
8+56.39 грн
10+41.41 грн
29+32.85 грн
78+31.10 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
CPC3980ZTR CPC3980ZTR IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1EE791A01894B3780746&compId=CPC3980.pdf?ci_sign=4477efd49cd6b0ec4bf7ba5fcdd87ec36338421c Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 0.1A; 1.8W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 0.1A
Power dissipation: 1.8W
Case: SOT223
On-state resistance: 45Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
Gate-source voltage: ±15V
на замовлення 520 шт:
термін постачання 21-30 дні (днів)
5+102.53 грн
10+60.22 грн
25+50.62 грн
27+34.51 грн
75+32.61 грн
500+31.42 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
CPC3708CTR CPC3708CTR IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DC6EE5EB2B07820&compId=CPC3708.pdf?ci_sign=22daf6dfcbd2ce4c3bce7bb6c7b8c06a4717c6f1 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 350V; 0.13A; 1.8W; SOT89
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 350V
Drain current: 0.13A
Power dissipation: 1.8W
Case: SOT89
On-state resistance: 8Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
Gate-source voltage: ±20V
на замовлення 2715 шт:
термін постачання 21-30 дні (днів)
10+43.58 грн
12+35.15 грн
33+28.17 грн
91+26.66 грн
500+26.42 грн
1000+25.55 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
CPC3703CTR CPC3703CTR IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1EE791A002DE6F22C746&compId=CPC3703.pdf?ci_sign=cdc9bcfb7bdb77eb3d2d4a05f7238b30e900d599 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 0.36A; 1.1W; SOT89
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 0.36A
Power dissipation: 1.1W
Case: SOT89
On-state resistance: 4Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
Gate-source voltage: ±15V
на замовлення 1982 шт:
термін постачання 21-30 дні (днів)
6+77.75 грн
10+54.66 грн
32+29.75 грн
86+28.09 грн
1000+27.05 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
CPC3708ZTR CPC3708ZTR IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DC6EE5EB2B07820&compId=CPC3708.pdf?ci_sign=22daf6dfcbd2ce4c3bce7bb6c7b8c06a4717c6f1 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 350V; 0.13A; 2.5W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 350V
Drain current: 0.13A
Power dissipation: 2.5W
Case: SOT223
On-state resistance: 8Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
Gate-source voltage: ±20V
на замовлення 885 шт:
термін постачання 21-30 дні (днів)
9+52.12 грн
13+32.69 грн
56+16.74 грн
153+15.87 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
CPC3960ZTR CPC3960ZTR IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DC71CB207519820&compId=CPC3960.pdf?ci_sign=98abdb9ca19f419f79fba375011eb85cc29ea29f Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.1A; 1.8W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.1A
Power dissipation: 1.8W
Case: SOT223
On-state resistance: 44Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
Gate-source voltage: ±15V
на замовлення 939 шт:
термін постачання 21-30 дні (днів)
10+42.72 грн
12+34.83 грн
31+30.62 грн
84+28.96 грн
250+27.85 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
CPC3902ZTR CPC3902ZTR IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DC6DFA5F84F9820&compId=CPC3902.pdf?ci_sign=f60c68197a69999e05253e2148d7740093534ce7 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 0.4A; 1.8W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 0.4A
Power dissipation: 1.8W
Case: SOT223
On-state resistance: 2.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
Gate-source voltage: ±15V
на замовлення 151 шт:
термін постачання 21-30 дні (днів)
6+79.46 грн
10+49.11 грн
36+26.10 грн
99+24.67 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
CPC3720CTR CPC3720CTR IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DC6FEB8A4E29820&compId=CPC3720.pdf?ci_sign=c1cbf9c1b8179c87f7fb0153f8c41f0f7763ed94 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 350V; 0.13A; 1.4W; SOT89
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 350V
Drain current: 0.13A
Power dissipation: 1.4W
Case: SOT89
On-state resistance: 22Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
Gate-source voltage: ±15V
на замовлення 381 шт:
термін постачання 21-30 дні (днів)
11+41.87 грн
19+21.90 грн
25+19.99 грн
61+15.39 грн
167+14.52 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
CPC3730CTR CPC3730CTR IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DC708F10FBC7820&compId=CPC3730.pdf?ci_sign=2122ae37c6b47f9d655a2287b1f346ae35245869 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 350V; 0.14A; 1.4W; SOT89
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 350V
Drain current: 0.14A
Power dissipation: 1.4W
Case: SOT89
On-state resistance: 35Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
Gate-source voltage: ±15V
на замовлення 23 шт:
термін постачання 21-30 дні (днів)
7+67.50 грн
10+39.99 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
IXTP3N50D2 IXTP3N50D2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CBCC5F1A4EB820&compId=IXTA(P)3N50D2.pdf?ci_sign=1433b6210e8ee4e73eac19dda6d08b4459ecca40 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3A; 125W; TO220AB; 24ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3A
Power dissipation: 125W
Case: TO220AB
On-state resistance: 1.5Ω
Mounting: THT
Gate charge: 1.07µC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 24ns
на замовлення 275 шт:
термін постачання 21-30 дні (днів)
2+290.50 грн
5+201.52 грн
13+190.41 грн
50+183.27 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXTP3N100D2 IXTP3N100D2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CBD9B42C73B820&compId=IXTA(P)3N100D2.pdf?ci_sign=c245ce0cffe79380fadde6d25a375768a49f0754 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 3A; 125W; TO220AB; 17ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 3A
Power dissipation: 125W
Case: TO220AB
On-state resistance: 5.5Ω
Mounting: THT
Gate charge: 1.02µC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 17ns
на замовлення 190 шт:
термін постачання 21-30 дні (днів)
2+302.46 грн
7+153.12 грн
17+145.19 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
DFE250X600NA DFE250X600NA IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA995ACFA150C60C7&compId=DFE250X600NA.pdf?ci_sign=f03c56d23c57f4adb2c23c5dfd64b00cd5d05558 Category: Diode modules
Description: Module: diode; double independent; 600V; If: 125Ax2; SOT227B; screw
Load current: 125A x2
Max. off-state voltage: 0.6kV
Max. forward impulse current: 1.2kA
Type of semiconductor module: diode
Semiconductor structure: double independent
Technology: FRED
Electrical mounting: screw
Mechanical mounting: screw
Case: SOT227B
товару немає в наявності
В кошику  од. на суму  грн.
IXFX360N10T IXFX360N10T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CBEC3CAC2D3820&compId=IXFK(X)360N10T.pdf?ci_sign=3e3c42ae502f5134306933943e750d4d7a30bb3e Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 360A; 1250W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 360A
Power dissipation: 1.25kW
Case: PLUS247™
On-state resistance: 2.9mΩ
Mounting: THT
Gate charge: 525nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
на замовлення 16 шт:
термін постачання 21-30 дні (днів)
1+917.64 грн
2+688.66 грн
4+651.37 грн
В кошику  од. на суму  грн.
IXTA60N10T IXTA60N10T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D49165695D1820&compId=IXTA(P)60N10T.pdf?ci_sign=92e4c232650cb3131af7dac4c451a83cc9058951 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; 176W; TO263; 59ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Power dissipation: 176W
Case: TO263
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 49nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 59ns
Features of semiconductor devices: thrench gate power mosfet
товару немає в наявності
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IXFK360N10T IXFK360N10T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CBEC3CAC2D3820&compId=IXFK(X)360N10T.pdf?ci_sign=3e3c42ae502f5134306933943e750d4d7a30bb3e Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 360A; 1250W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 360A
Power dissipation: 1.25kW
Case: TO264
On-state resistance: 2.9mΩ
Mounting: THT
Gate charge: 525nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
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IXTQ75N10P IXTQ75N10P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF90D5A933743E27&compId=IXTA75N10P-DTE.pdf?ci_sign=29c5960ed4596421bc0557caba4ef533fa0ac975 Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 100V; 75A; 360W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 75A
Power dissipation: 360W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: THT
Gate charge: 74nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 120ns
Technology: PolarHT™
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IXTA75N10P IXTA75N10P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF90D5A933743E27&compId=IXTA75N10P-DTE.pdf?ci_sign=29c5960ed4596421bc0557caba4ef533fa0ac975 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 100V; 75A; 360W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 75A
Power dissipation: 360W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 74nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 120ns
Technology: PolarHT™
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IXTP75N10P IXTP75N10P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF90D5A933743E27&compId=IXTA75N10P-DTE.pdf?ci_sign=29c5960ed4596421bc0557caba4ef533fa0ac975 Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 100V; 75A; 360W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 75A
Power dissipation: 360W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: THT
Gate charge: 74nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 120ns
Technology: PolarHT™
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IXFR200N10P IXFR200N10P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9557C6B1F820&compId=IXFR200N10P.pdf?ci_sign=3c1c3fb8dc67ddc7f0c6584000497132bd7f705c Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 300W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Power dissipation: 300W
Case: ISOPLUS247™
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 235nC
Kind of package: tube
Kind of channel: enhancement
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DH2x61-18A DH2x61-18A IXYS pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BFA3917980F9A143&compId=DH2x61-18A.pdf?ci_sign=9a38366b86340976e134475ecf6537203b91506d Category: Diode modules
Description: Module: diode; double independent; 1.8kV; If: 60Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 1.8kV
Load current: 60A x2
Case: SOT227B
Max. forward voltage: 2.71V
Max. forward impulse current: 700A
Electrical mounting: screw
Mechanical mounting: screw
Technology: Sonic FRD™
на замовлення 206 шт:
термін постачання 21-30 дні (днів)
1+2445.33 грн
2+2146.89 грн
3+2145.31 грн
5+2064.38 грн
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IXFT170N25X3HV IXFT170N25X3HV IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D53B40079AF820&compId=IXFH(K%2CT)170N25X3_HV.pdf?ci_sign=ea75d9eee3b336dc745cd69a3f9d9bb3eb1a5cef Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 170A; 890W; TO268HV; 140ns
Kind of channel: enhancement
Case: TO268HV
Type of transistor: N-MOSFET
Mounting: SMD
Kind of package: tube
Features of semiconductor devices: ultra junction x-class
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 170A
Gate charge: 0.19µC
Reverse recovery time: 140ns
On-state resistance: 7.4mΩ
Power dissipation: 890W
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LCA110S LCA110S IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A483052991F8BF&compId=lca110.pdf?ci_sign=6db4a72c7d784c5cc2d7115aeb5e0a37f40ff8fb Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
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LCA110LS LCA110LS IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49442FF0540C7&compId=LCA110L.pdf?ci_sign=86bd0ef71cc528aa81bdad92955a034ae9b8259a Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
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LCA110L LCA110L IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49442FF0540C7&compId=LCA110L.pdf?ci_sign=86bd0ef71cc528aa81bdad92955a034ae9b8259a Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: THT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
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LCA110LSTR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49442FF0540C7&compId=LCA110L.pdf?ci_sign=86bd0ef71cc528aa81bdad92955a034ae9b8259a Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
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LCA110STR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49442FF03E0C7&compId=LCA110.pdf?ci_sign=c8142c6ee880adf29cd86bcd32b0c988eb9cc4fd Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
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IXGX50N120C3H1 IXGX50N120C3H1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAD2F4A1BC0B820&compId=IXGK(X)50N120C3H1.pdf?ci_sign=61c063dc7fba9e54ef68ca4e62646d9c16039893 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 50A; 460W; PLUS247™
Case: PLUS247™
Kind of package: tube
Mounting: THT
Turn-on time: 60ns
Gate charge: 196nC
Turn-off time: 485ns
Power dissipation: 460W
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 240A
Collector-emitter voltage: 1.2kV
Technology: GenX3™; PT
Type of transistor: IGBT
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IXTT68P20T IXTT68P20T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98E9ED61D4D9A98BF&compId=IXT_68P20T.pdf?ci_sign=907d68fa4d342ed847599892ceb3c0cff81a2dc3 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -200V; -68A; 568W; TO268
Case: TO268
Kind of channel: enhancement
Mounting: SMD
Technology: TrenchP™
Kind of package: tube
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -68A
Gate charge: 380nC
Reverse recovery time: 245ns
On-state resistance: 55mΩ
Gate-source voltage: ±15V
Power dissipation: 568W
на замовлення 14 шт:
термін постачання 21-30 дні (днів)
1+1111.59 грн
3+975.86 грн
10+974.27 грн
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IXTH68P20T IXTH68P20T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98E9ED61D4D9A98BF&compId=IXT_68P20T.pdf?ci_sign=907d68fa4d342ed847599892ceb3c0cff81a2dc3 Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -200V; -68A; 568W; 245ns
Case: TO247-3
Kind of channel: enhancement
Mounting: THT
Technology: TrenchP™
Kind of package: tube
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -68A
Gate charge: 380nC
Reverse recovery time: 245ns
On-state resistance: 55mΩ
Gate-source voltage: ±15V
Power dissipation: 568W
на замовлення 38 шт:
термін постачання 21-30 дні (днів)
1+1081.69 грн
2+863.99 грн
3+816.39 грн
30+795.76 грн
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LCB716STR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4942FD86B80C7&compId=LCB716.pdf?ci_sign=239a583110832831eb497922a13a6eef8ed42085 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 500mA; max.60VAC
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Control current max.: 50mA
On-state resistance: 2Ω
Max. operating current: 0.5A
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Case: DIP6
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NC
Turn-on time: 3ms
Turn-off time: 3ms
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LBA716STR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B493DAE32260C7&compId=LBA716.pdf?ci_sign=b15836e20984726f57cde4fb1541cf40958f3cc0 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 1000mA
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
On-state resistance: 0.4Ω
Max. operating current: 1A
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Case: DIP8
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Turn-on time: 5ms
Turn-off time: 5ms
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IXTH06N220P3HV IXTH06N220P3HV IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F965B917C5820&compId=IXTH06N220P3HV.pdf?ci_sign=c5544d6a368be1812460f8c612b16431ae5057b8 Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 2.2kV; 0.38A; Idm: 1.2A
Mounting: THT
Features of semiconductor devices: standard power mosfet
Case: TO247HV
Kind of package: tube
Polarisation: unipolar
Gate charge: 10.4nC
Reverse recovery time: 1.1µs
Drain current: 0.38A
Pulsed drain current: 1.2A
Gate-source voltage: ±20V
On-state resistance: 80Ω
Power dissipation: 104W
Drain-source voltage: 2.2kV
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: Polar3™
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LF21064NTR LF21064NTR IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDC91F2421A8BF540CE&compId=LF21064NTR.pdf?ci_sign=e682ca118a42aaf6b437dce60cfc912cc7935749 Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO14; Ch: 2
Case: SO14
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Output current: -600...290mA
Number of channels: 2
Supply voltage: 10...20V
Voltage class: 600V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT half-bridge; MOSFET half-bridge
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DSSK38-0025B DSSK38-0025B IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE991CB8361B9E978BF&compId=DSSK38-0025B.pdf?ci_sign=5945a524ce67c952038b0c59c865bb5bf91e0c81 Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 25V; 20Ax2; TO220AB; Ufmax: 0.4V
Type of diode: Schottky rectifying
Case: TO220AB
Mounting: THT
Max. off-state voltage: 25V
Load current: 20A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.4V
Max. forward impulse current: 330A
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
Power dissipation: 90W
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IXTA380N036T4-7 IXTA380N036T4-7 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9618AC841820&compId=IXTA380N036T4-7.pdf?ci_sign=b1eaa1695bce41b3486bfc29ca5480a7098c99c0 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 36V; 380A; 480W; TO263-7; 54ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 36V
Drain current: 380A
Power dissipation: 480W
Case: TO263-7
On-state resistance: 1mΩ
Mounting: SMD
Gate charge: 260nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 54ns
Features of semiconductor devices: thrench gate power mosfet
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MG12300D-BN2MM IXYS Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Case: Y3-DCB
Technology: Field Stop; Trench
Electrical mounting: FASTON connectors; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Max. off-state voltage: 1.2kV
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IXFT100N30X3HV IXFT100N30X3HV IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE990FBCDA1FA5458BF&compId=IXF_100N30X3_HV.pdf?ci_sign=291cad4ee4c338832090f6d9d224fee09028d26c pVersion=0046&contRep=ZT&docId=005056AB82531EE990FC1CCCD2D4B8BF&compId=300VProductBrief.pdf?ci_sign=243527b0db45b2a88c7e85e44a9cf5e3419beb5c Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 100A; 480W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 100A
Power dissipation: 480W
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 13.5mΩ
Mounting: SMD
Gate charge: 122nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 130ns
Technology: HiPerFET™; X3-Class
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IXBT2N250 IXBT2N250 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAFD07043005820&compId=IXBH(T)2N250.pdf?ci_sign=adab234c75aabbb58f5d98046e17708bb23548a0 Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 2.5kV; 2A; 32W; TO268
Case: TO268
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Mounting: SMD
Gate charge: 10.6nC
Turn-on time: 310ns
Turn-off time: 252ns
Power dissipation: 32W
Collector current: 2A
Pulsed collector current: 13A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 2.5kV
Kind of package: tube
Technology: BiMOSFET™
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
1+1343.99 грн
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IXTP3N120 IXTP3N120 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE9939639605145D8BF&compId=IXT_3N120.pdf?ci_sign=d609b50c6bcbcefe4c172ac69adac53131300bfe Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 3A; 200W; TO220AB; 700ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 3A
Power dissipation: 200W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.5Ω
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 700ns
на замовлення 295 шт:
термін постачання 21-30 дні (днів)
1+551.10 грн
3+407.01 грн
7+384.79 грн
100+370.51 грн
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IXTH3N120 IXTH3N120 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE9939639605145D8BF&compId=IXT_3N120.pdf?ci_sign=d609b50c6bcbcefe4c172ac69adac53131300bfe Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 3A; 200W; TO247-3; 700ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 3A
Power dissipation: 200W
Case: TO247-3
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 700ns
Features of semiconductor devices: standard power mosfet
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IXFP3N120 IXFP3N120 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9557C6A2D820&compId=IXFP3N120.pdf?ci_sign=eea5a63569752789e65884b7dc57c6064d9f42e7 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 3A; 200W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 3A
Power dissipation: 200W
Case: TO220AB
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhancement
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IXTA3N120 IXTA3N120 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE9939639605145D8BF&compId=IXT_3N120.pdf?ci_sign=d609b50c6bcbcefe4c172ac69adac53131300bfe Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 3A; 200W; TO263; 700ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 3A
Power dissipation: 200W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 4.5Ω
Mounting: SMD
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 700ns
товару немає в наявності
В кошику  од. на суму  грн.
IXTA3N120HV IXTA3N120HV IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9618AC871820&compId=IXTA3N120HV.pdf?ci_sign=cc2fbe5c647ead4e5e76f0a4ba3c372cb9cc3e1b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 3A; 200W; TO263HV; 700ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 3A
Power dissipation: 200W
Case: TO263HV
Mounting: SMD
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 700ns
Features of semiconductor devices: standard power mosfet
товару немає в наявності
В кошику  од. на суму  грн.
IXTK100N25P IXTK100N25P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF90F1896B593E27&compId=IXTK100N25P-DTE.pdf?ci_sign=ca4a750df92eea9f262967bae79b2712e1f8dcc2 Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 250V; 100A; 600W; TO264
Gate-source voltage: ±20V
Power dissipation: 600W
Drain-source voltage: 250V
Drain current: 100A
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: PolarHT™
Mounting: THT
Case: TO264
Kind of package: tube
Polarisation: unipolar
Gate charge: 185nC
Reverse recovery time: 200ns
On-state resistance: 27mΩ
товару немає в наявності
В кошику  од. на суму  грн.
IXFX180N15P IXFX180N15P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9618AC683820&compId=IXFX180N15P.pdf?ci_sign=40187178a4b225c5dfde0aad35e7695313904b5e Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 180A; 830W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 180A
Power dissipation: 830W
Case: PLUS247™
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 2 шт:
термін постачання 21-30 дні (днів)
2+394.74 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXFK180N25T IXFK180N25T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D54A180A387820&compId=IXFK(X)180N25T.pdf?ci_sign=df55105c078d9abc2821a1e455a37ba5cb1f4c8f Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 180A; 1390W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 180A
Power dissipation: 1390W
Case: TO264
On-state resistance: 12.9mΩ
Mounting: THT
Gate charge: 364nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
на замовлення 23 шт:
термін постачання 21-30 дні (днів)
1+1184.21 грн
3+1039.33 грн
5+1007.60 грн
10+999.66 грн
В кошику  од. на суму  грн.
IXFT30N85XHV IXFT30N85XHV IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CC2992D6C47820&compId=IXFH30N85X_IXFT30N85XHV.pdf?ci_sign=390b5581f76a713c23254cf56e292a2a68f13ab2 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 30A; 695W; TO268HV; 160ns
Mounting: SMD
Case: TO268HV
Kind of package: tube
Polarisation: unipolar
Gate charge: 68nC
Reverse recovery time: 160ns
On-state resistance: 0.23Ω
Drain current: 30A
Power dissipation: 695W
Drain-source voltage: 850V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Features of semiconductor devices: ultra junction x-class
товару немає в наявності
В кошику  од. на суму  грн.
DSI30-16AS DSI30-16AS IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98AD640807D25B8BF&compId=DSI30-16AS.pdf?ci_sign=cfb14604109bfeb6853a2d73a81795d58f27df7d Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.6kV; 30A; D2PAK; Ufmax: 1.25V; Ifsm: 255A
Mounting: SMD
Case: D2PAK
Max. forward voltage: 1.25V
Load current: 30A
Max. forward impulse current: 255A
Max. off-state voltage: 1.6kV
Power dissipation: 160W
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: rectifying
на замовлення 24 шт:
термін постачання 21-30 дні (днів)
2+279.39 грн
6+164.23 грн
16+155.50 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
DMA30IM1600PZ-TUB DMA30IM1600PZ-TUB IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCB44828817100C4&compId=DMA30IM1600PZ.pdf?ci_sign=4c14a69c06510d6b4ac4e711990bb7aba5b75b6b Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.6kV; 30A; TO263ABHV; Ufmax: 1.26V; 210W
Mounting: SMD
Case: TO263ABHV
Max. forward voltage: 1.26V
Load current: 30A
Max. forward impulse current: 255A
Max. off-state voltage: 1.6kV
Power dissipation: 210W
Kind of package: tube
Semiconductor structure: single diode
Type of diode: rectifying
на замовлення 48 шт:
термін постачання 21-30 дні (днів)
3+157.09 грн
8+131.70 грн
20+124.56 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
DSI30-12AS-TUB DSI30-12AS-TUB IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98AD6220BAB21F8BF&compId=DSI30-12AS.pdf?ci_sign=a820b6b43ca6d425507016409b4cfb52adb13ae0 Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 30A; D2PAK; Ufmax: 1.25V; Ifsm: 255A
Mounting: SMD
Case: D2PAK
Max. forward voltage: 1.25V
Load current: 30A
Max. forward impulse current: 255A
Max. off-state voltage: 1.2kV
Power dissipation: 160W
Kind of package: tube
Semiconductor structure: single diode
Type of diode: rectifying
на замовлення 94 шт:
термін постачання 21-30 дні (днів)
2+248.63 грн
8+130.91 грн
20+122.97 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
LF21904NTR LF21904NTR IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDC91F2B68AE8C680CE&compId=LF21904NTR.pdf?ci_sign=f046af4b59b042a640f6da7511355db6af15f8d3 Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO14; -4.5÷4.5A
Case: SO14
Mounting: SMD
Kind of package: reel; tape
Number of channels: 2
Supply voltage: 10...20V
Voltage class: 600V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT half-bridge; MOSFET half-bridge
Operating temperature: -40...125°C
Output current: -4.5...4.5A
товару немає в наявності
В кошику  од. на суму  грн.
MCMA25PD1600TB pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BD80DD6A73ADE0C4&compId=MCMA25PD1600TB.pdf?ci_sign=736dc4ed2df1376efda2f070951405c5bea4b009 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 25A; TO240AA; Ufmax: 1.25V; bulk
Case: TO240AA
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Gate current: 55/80mA
Threshold on-voltage: 0.87V
Max. forward voltage: 1.25V
Load current: 25A
Max. load current: 40A
Max. forward impulse current: 0.4kA
Max. off-state voltage: 1.6kV
Kind of package: bulk
Type of semiconductor module: diode-thyristor
товару немає в наявності
В кошику  од. на суму  грн.
MCMA85PD1600TB pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BD811F443E64C0C4&compId=MCMA85PD1600TB.pdf?ci_sign=272e7fff698eb0479745f9579ed9728abdc529c3 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 85A; TO240AA; Ufmax: 1.18V; bulk
Case: TO240AA
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Gate current: 95/200mA
Threshold on-voltage: 0.85V
Max. forward voltage: 1.18V
Load current: 85A
Max. load current: 135A
Max. forward impulse current: 1.5kA
Max. off-state voltage: 1.6kV
Kind of package: bulk
Type of semiconductor module: diode-thyristor
товару немає в наявності
В кошику  од. на суму  грн.
MCMA110PD1600TB pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BD80B04D5E18E0C4&compId=MCMA110PD1600TB.pdf?ci_sign=4b039647ab9d7138ff56499a2acddc4f604ee922 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 110A; TO240AA; Ufmax: 1.21V; bulk
Case: TO240AA
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Gate current: 150/200mA
Threshold on-voltage: 0.85V
Max. forward voltage: 1.21V
Load current: 110A
Max. load current: 170A
Max. forward impulse current: 1.9kA
Max. off-state voltage: 1.6kV
Kind of package: bulk
Type of semiconductor module: diode-thyristor
товару немає в наявності
В кошику  од. на суму  грн.
IXFK100N65X2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A389E5CCA0EF7820&compId=IXFK(X)100N65X2.pdf?ci_sign=943e818235cb436b72c8d4fa8bbbd2fba5457b4b
IXFK100N65X2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 100A; 1040W; TO264; 200ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 100A
Power dissipation: 1.04kW
Case: TO264
On-state resistance: 30mΩ
Mounting: THT
Gate charge: 183nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 200ns
на замовлення 3 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1056.91 грн
3+928.26 грн
В кошику  од. на суму  грн.
IXTA6N50D2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D44656080E1820&compId=IXTA(H%2CP)6N50D2.pdf?ci_sign=4402ac4ed2bcb4f9bf6d4b15eccc2d1eb120f187
IXTA6N50D2
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6A; 300W; TO263; 64ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 6A
Power dissipation: 300W
Case: TO263
On-state resistance: 0.5Ω
Mounting: SMD
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 64ns
на замовлення 300 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+710.87 грн
2+468.10 грн
6+441.91 грн
В кошику  од. на суму  грн.
IXTH6N50D2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D44656080E1820&compId=IXTA(H%2CP)6N50D2.pdf?ci_sign=4402ac4ed2bcb4f9bf6d4b15eccc2d1eb120f187
IXTH6N50D2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6A; 300W; TO247-3; 64ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 6A
Power dissipation: 300W
Case: TO247-3
On-state resistance: 0.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 64ns
на замовлення 215 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+640.81 грн
3+379.24 грн
7+358.61 грн
В кошику  од. на суму  грн.
IXTP6N50D2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D44656080E1820&compId=IXTA(H%2CP)6N50D2.pdf?ci_sign=4402ac4ed2bcb4f9bf6d4b15eccc2d1eb120f187
IXTP6N50D2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6A; 300W; TO220AB; 64ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 6A
Power dissipation: 300W
Case: TO220AB
On-state resistance: 0.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 64ns
на замовлення 160 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+575.02 грн
3+349.09 грн
8+330.84 грн
В кошику  од. на суму  грн.
IXTP6N100D2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D45948322AD820&compId=IXTA(H%2CP)6N100D2.pdf?ci_sign=ae2f4eab8381be464d1f510c96b6fa260d11e708
IXTP6N100D2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 6A; 300W; TO220AB; 41ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 6A
Power dissipation: 300W
Case: TO220AB
On-state resistance: 2.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 41ns
на замовлення 350 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+669.86 грн
3+459.37 грн
6+434.77 грн
50+427.63 грн
В кошику  од. на суму  грн.
CPC3982TTR pVersion=0046&contRep=ZT&docId=005056AB82531EE995A6583C3D1118BF&compId=CPC3982.pdf?ci_sign=768e2d563e17ec093534afea6845d24c4cb589b3
CPC3982TTR
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 0.15A; 0.4W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 0.15A
Power dissipation: 0.4W
Case: SOT23
On-state resistance: 380Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
Gate-source voltage: ±15V
на замовлення 2851 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
11+41.87 грн
12+33.64 грн
49+19.20 грн
134+18.17 грн
1000+17.45 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
CPC5603CTR pVersion=0046&contRep=ZT&docId=005056AB82531EE995A67566F94DB8BF&compId=CPC5603.pdf?ci_sign=e714e258bc789b11f74bf228bdeffe81ffeed81b
CPC5603CTR
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 415V; 0.13A; 2.5W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 415V
Drain current: 0.13A
Power dissipation: 2.5W
Case: SOT223
On-state resistance: 14Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
Gate-source voltage: ±20V
на замовлення 315 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
8+56.39 грн
10+41.41 грн
29+32.85 грн
78+31.10 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
CPC3980ZTR pVersion=0046&contRep=ZT&docId=005056AB752F1EE791A01894B3780746&compId=CPC3980.pdf?ci_sign=4477efd49cd6b0ec4bf7ba5fcdd87ec36338421c
CPC3980ZTR
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 0.1A; 1.8W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 0.1A
Power dissipation: 1.8W
Case: SOT223
On-state resistance: 45Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
Gate-source voltage: ±15V
на замовлення 520 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
5+102.53 грн
10+60.22 грн
25+50.62 грн
27+34.51 грн
75+32.61 грн
500+31.42 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
CPC3708CTR pVersion=0046&contRep=ZT&docId=005056AB82531ED99DC6EE5EB2B07820&compId=CPC3708.pdf?ci_sign=22daf6dfcbd2ce4c3bce7bb6c7b8c06a4717c6f1
CPC3708CTR
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 350V; 0.13A; 1.8W; SOT89
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 350V
Drain current: 0.13A
Power dissipation: 1.8W
Case: SOT89
On-state resistance: 8Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
Gate-source voltage: ±20V
на замовлення 2715 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
10+43.58 грн
12+35.15 грн
33+28.17 грн
91+26.66 грн
500+26.42 грн
1000+25.55 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
CPC3703CTR pVersion=0046&contRep=ZT&docId=005056AB752F1EE791A002DE6F22C746&compId=CPC3703.pdf?ci_sign=cdc9bcfb7bdb77eb3d2d4a05f7238b30e900d599
CPC3703CTR
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 0.36A; 1.1W; SOT89
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 0.36A
Power dissipation: 1.1W
Case: SOT89
On-state resistance: 4Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
Gate-source voltage: ±15V
на замовлення 1982 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
6+77.75 грн
10+54.66 грн
32+29.75 грн
86+28.09 грн
1000+27.05 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
CPC3708ZTR pVersion=0046&contRep=ZT&docId=005056AB82531ED99DC6EE5EB2B07820&compId=CPC3708.pdf?ci_sign=22daf6dfcbd2ce4c3bce7bb6c7b8c06a4717c6f1
CPC3708ZTR
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 350V; 0.13A; 2.5W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 350V
Drain current: 0.13A
Power dissipation: 2.5W
Case: SOT223
On-state resistance: 8Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
Gate-source voltage: ±20V
на замовлення 885 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
9+52.12 грн
13+32.69 грн
56+16.74 грн
153+15.87 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
CPC3960ZTR pVersion=0046&contRep=ZT&docId=005056AB82531ED99DC71CB207519820&compId=CPC3960.pdf?ci_sign=98abdb9ca19f419f79fba375011eb85cc29ea29f
CPC3960ZTR
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.1A; 1.8W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.1A
Power dissipation: 1.8W
Case: SOT223
On-state resistance: 44Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
Gate-source voltage: ±15V
на замовлення 939 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
10+42.72 грн
12+34.83 грн
31+30.62 грн
84+28.96 грн
250+27.85 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
CPC3902ZTR pVersion=0046&contRep=ZT&docId=005056AB82531ED99DC6DFA5F84F9820&compId=CPC3902.pdf?ci_sign=f60c68197a69999e05253e2148d7740093534ce7
CPC3902ZTR
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 0.4A; 1.8W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 0.4A
Power dissipation: 1.8W
Case: SOT223
On-state resistance: 2.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
Gate-source voltage: ±15V
на замовлення 151 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
6+79.46 грн
10+49.11 грн
36+26.10 грн
99+24.67 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
CPC3720CTR pVersion=0046&contRep=ZT&docId=005056AB82531ED99DC6FEB8A4E29820&compId=CPC3720.pdf?ci_sign=c1cbf9c1b8179c87f7fb0153f8c41f0f7763ed94
CPC3720CTR
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 350V; 0.13A; 1.4W; SOT89
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 350V
Drain current: 0.13A
Power dissipation: 1.4W
Case: SOT89
On-state resistance: 22Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
Gate-source voltage: ±15V
на замовлення 381 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
11+41.87 грн
19+21.90 грн
25+19.99 грн
61+15.39 грн
167+14.52 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
CPC3730CTR pVersion=0046&contRep=ZT&docId=005056AB82531ED99DC708F10FBC7820&compId=CPC3730.pdf?ci_sign=2122ae37c6b47f9d655a2287b1f346ae35245869
CPC3730CTR
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 350V; 0.14A; 1.4W; SOT89
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 350V
Drain current: 0.14A
Power dissipation: 1.4W
Case: SOT89
On-state resistance: 35Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
Gate-source voltage: ±15V
на замовлення 23 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
7+67.50 грн
10+39.99 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
IXTP3N50D2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CBCC5F1A4EB820&compId=IXTA(P)3N50D2.pdf?ci_sign=1433b6210e8ee4e73eac19dda6d08b4459ecca40
IXTP3N50D2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3A; 125W; TO220AB; 24ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3A
Power dissipation: 125W
Case: TO220AB
On-state resistance: 1.5Ω
Mounting: THT
Gate charge: 1.07µC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 24ns
на замовлення 275 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+290.50 грн
5+201.52 грн
13+190.41 грн
50+183.27 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXTP3N100D2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CBD9B42C73B820&compId=IXTA(P)3N100D2.pdf?ci_sign=c245ce0cffe79380fadde6d25a375768a49f0754
IXTP3N100D2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 3A; 125W; TO220AB; 17ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 3A
Power dissipation: 125W
Case: TO220AB
On-state resistance: 5.5Ω
Mounting: THT
Gate charge: 1.02µC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 17ns
на замовлення 190 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+302.46 грн
7+153.12 грн
17+145.19 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
DFE250X600NA pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA995ACFA150C60C7&compId=DFE250X600NA.pdf?ci_sign=f03c56d23c57f4adb2c23c5dfd64b00cd5d05558
DFE250X600NA
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double independent; 600V; If: 125Ax2; SOT227B; screw
Load current: 125A x2
Max. off-state voltage: 0.6kV
Max. forward impulse current: 1.2kA
Type of semiconductor module: diode
Semiconductor structure: double independent
Technology: FRED
Electrical mounting: screw
Mechanical mounting: screw
Case: SOT227B
товару немає в наявності
В кошику  од. на суму  грн.
IXFX360N10T pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CBEC3CAC2D3820&compId=IXFK(X)360N10T.pdf?ci_sign=3e3c42ae502f5134306933943e750d4d7a30bb3e
IXFX360N10T
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 360A; 1250W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 360A
Power dissipation: 1.25kW
Case: PLUS247™
On-state resistance: 2.9mΩ
Mounting: THT
Gate charge: 525nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
на замовлення 16 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+917.64 грн
2+688.66 грн
4+651.37 грн
В кошику  од. на суму  грн.
IXTA60N10T pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D49165695D1820&compId=IXTA(P)60N10T.pdf?ci_sign=92e4c232650cb3131af7dac4c451a83cc9058951
IXTA60N10T
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; 176W; TO263; 59ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Power dissipation: 176W
Case: TO263
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 49nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 59ns
Features of semiconductor devices: thrench gate power mosfet
товару немає в наявності
В кошику  од. на суму  грн.
IXFK360N10T pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CBEC3CAC2D3820&compId=IXFK(X)360N10T.pdf?ci_sign=3e3c42ae502f5134306933943e750d4d7a30bb3e
IXFK360N10T
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 360A; 1250W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 360A
Power dissipation: 1.25kW
Case: TO264
On-state resistance: 2.9mΩ
Mounting: THT
Gate charge: 525nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
товару немає в наявності
В кошику  од. на суму  грн.
IXTQ75N10P pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF90D5A933743E27&compId=IXTA75N10P-DTE.pdf?ci_sign=29c5960ed4596421bc0557caba4ef533fa0ac975
IXTQ75N10P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 100V; 75A; 360W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 75A
Power dissipation: 360W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: THT
Gate charge: 74nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 120ns
Technology: PolarHT™
товару немає в наявності
В кошику  од. на суму  грн.
IXTA75N10P pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF90D5A933743E27&compId=IXTA75N10P-DTE.pdf?ci_sign=29c5960ed4596421bc0557caba4ef533fa0ac975
IXTA75N10P
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 100V; 75A; 360W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 75A
Power dissipation: 360W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 74nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 120ns
Technology: PolarHT™
товару немає в наявності
В кошику  од. на суму  грн.
IXTP75N10P pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF90D5A933743E27&compId=IXTA75N10P-DTE.pdf?ci_sign=29c5960ed4596421bc0557caba4ef533fa0ac975
IXTP75N10P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 100V; 75A; 360W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 75A
Power dissipation: 360W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: THT
Gate charge: 74nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 120ns
Technology: PolarHT™
товару немає в наявності
В кошику  од. на суму  грн.
IXFR200N10P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9557C6B1F820&compId=IXFR200N10P.pdf?ci_sign=3c1c3fb8dc67ddc7f0c6584000497132bd7f705c
IXFR200N10P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 300W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Power dissipation: 300W
Case: ISOPLUS247™
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 235nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
DH2x61-18A pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BFA3917980F9A143&compId=DH2x61-18A.pdf?ci_sign=9a38366b86340976e134475ecf6537203b91506d
DH2x61-18A
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double independent; 1.8kV; If: 60Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 1.8kV
Load current: 60A x2
Case: SOT227B
Max. forward voltage: 2.71V
Max. forward impulse current: 700A
Electrical mounting: screw
Mechanical mounting: screw
Technology: Sonic FRD™
на замовлення 206 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+2445.33 грн
2+2146.89 грн
3+2145.31 грн
5+2064.38 грн
В кошику  од. на суму  грн.
IXFT170N25X3HV pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D53B40079AF820&compId=IXFH(K%2CT)170N25X3_HV.pdf?ci_sign=ea75d9eee3b336dc745cd69a3f9d9bb3eb1a5cef
IXFT170N25X3HV
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 170A; 890W; TO268HV; 140ns
Kind of channel: enhancement
Case: TO268HV
Type of transistor: N-MOSFET
Mounting: SMD
Kind of package: tube
Features of semiconductor devices: ultra junction x-class
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 170A
Gate charge: 0.19µC
Reverse recovery time: 140ns
On-state resistance: 7.4mΩ
Power dissipation: 890W
товару немає в наявності
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LCA110S pVersion=0046&contRep=ZT&docId=005056AB82531EE995A483052991F8BF&compId=lca110.pdf?ci_sign=6db4a72c7d784c5cc2d7115aeb5e0a37f40ff8fb
LCA110S
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
товару немає в наявності
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LCA110LS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49442FF0540C7&compId=LCA110L.pdf?ci_sign=86bd0ef71cc528aa81bdad92955a034ae9b8259a
LCA110LS
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
товару немає в наявності
В кошику  од. на суму  грн.
LCA110L pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49442FF0540C7&compId=LCA110L.pdf?ci_sign=86bd0ef71cc528aa81bdad92955a034ae9b8259a
LCA110L
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: THT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
товару немає в наявності
В кошику  од. на суму  грн.
LCA110LSTR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49442FF0540C7&compId=LCA110L.pdf?ci_sign=86bd0ef71cc528aa81bdad92955a034ae9b8259a
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
товару немає в наявності
В кошику  од. на суму  грн.
LCA110STR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49442FF03E0C7&compId=LCA110.pdf?ci_sign=c8142c6ee880adf29cd86bcd32b0c988eb9cc4fd
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
товару немає в наявності
В кошику  од. на суму  грн.
IXGX50N120C3H1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAD2F4A1BC0B820&compId=IXGK(X)50N120C3H1.pdf?ci_sign=61c063dc7fba9e54ef68ca4e62646d9c16039893
IXGX50N120C3H1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 50A; 460W; PLUS247™
Case: PLUS247™
Kind of package: tube
Mounting: THT
Turn-on time: 60ns
Gate charge: 196nC
Turn-off time: 485ns
Power dissipation: 460W
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 240A
Collector-emitter voltage: 1.2kV
Technology: GenX3™; PT
Type of transistor: IGBT
товару немає в наявності
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IXTT68P20T pVersion=0046&contRep=ZT&docId=005056AB82531EE98E9ED61D4D9A98BF&compId=IXT_68P20T.pdf?ci_sign=907d68fa4d342ed847599892ceb3c0cff81a2dc3
IXTT68P20T
Виробник: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -200V; -68A; 568W; TO268
Case: TO268
Kind of channel: enhancement
Mounting: SMD
Technology: TrenchP™
Kind of package: tube
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -68A
Gate charge: 380nC
Reverse recovery time: 245ns
On-state resistance: 55mΩ
Gate-source voltage: ±15V
Power dissipation: 568W
на замовлення 14 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1111.59 грн
3+975.86 грн
10+974.27 грн
В кошику  од. на суму  грн.
IXTH68P20T pVersion=0046&contRep=ZT&docId=005056AB82531EE98E9ED61D4D9A98BF&compId=IXT_68P20T.pdf?ci_sign=907d68fa4d342ed847599892ceb3c0cff81a2dc3
IXTH68P20T
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -200V; -68A; 568W; 245ns
Case: TO247-3
Kind of channel: enhancement
Mounting: THT
Technology: TrenchP™
Kind of package: tube
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -68A
Gate charge: 380nC
Reverse recovery time: 245ns
On-state resistance: 55mΩ
Gate-source voltage: ±15V
Power dissipation: 568W
на замовлення 38 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1081.69 грн
2+863.99 грн
3+816.39 грн
30+795.76 грн
В кошику  од. на суму  грн.
LCB716STR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4942FD86B80C7&compId=LCB716.pdf?ci_sign=239a583110832831eb497922a13a6eef8ed42085
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 500mA; max.60VAC
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Control current max.: 50mA
On-state resistance: 2Ω
Max. operating current: 0.5A
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Case: DIP6
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NC
Turn-on time: 3ms
Turn-off time: 3ms
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LBA716STR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B493DAE32260C7&compId=LBA716.pdf?ci_sign=b15836e20984726f57cde4fb1541cf40958f3cc0
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 1000mA
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
On-state resistance: 0.4Ω
Max. operating current: 1A
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Case: DIP8
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Turn-on time: 5ms
Turn-off time: 5ms
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IXTH06N220P3HV pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F965B917C5820&compId=IXTH06N220P3HV.pdf?ci_sign=c5544d6a368be1812460f8c612b16431ae5057b8
IXTH06N220P3HV
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 2.2kV; 0.38A; Idm: 1.2A
Mounting: THT
Features of semiconductor devices: standard power mosfet
Case: TO247HV
Kind of package: tube
Polarisation: unipolar
Gate charge: 10.4nC
Reverse recovery time: 1.1µs
Drain current: 0.38A
Pulsed drain current: 1.2A
Gate-source voltage: ±20V
On-state resistance: 80Ω
Power dissipation: 104W
Drain-source voltage: 2.2kV
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: Polar3™
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LF21064NTR pVersion=0046&contRep=ZT&docId=005056AB281E1EDC91F2421A8BF540CE&compId=LF21064NTR.pdf?ci_sign=e682ca118a42aaf6b437dce60cfc912cc7935749
LF21064NTR
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO14; Ch: 2
Case: SO14
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Output current: -600...290mA
Number of channels: 2
Supply voltage: 10...20V
Voltage class: 600V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT half-bridge; MOSFET half-bridge
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DSSK38-0025B pVersion=0046&contRep=ZT&docId=005056AB82531EE991CB8361B9E978BF&compId=DSSK38-0025B.pdf?ci_sign=5945a524ce67c952038b0c59c865bb5bf91e0c81
DSSK38-0025B
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 25V; 20Ax2; TO220AB; Ufmax: 0.4V
Type of diode: Schottky rectifying
Case: TO220AB
Mounting: THT
Max. off-state voltage: 25V
Load current: 20A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.4V
Max. forward impulse current: 330A
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
Power dissipation: 90W
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IXTA380N036T4-7 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9618AC841820&compId=IXTA380N036T4-7.pdf?ci_sign=b1eaa1695bce41b3486bfc29ca5480a7098c99c0
IXTA380N036T4-7
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 36V; 380A; 480W; TO263-7; 54ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 36V
Drain current: 380A
Power dissipation: 480W
Case: TO263-7
On-state resistance: 1mΩ
Mounting: SMD
Gate charge: 260nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 54ns
Features of semiconductor devices: thrench gate power mosfet
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MG12300D-BN2MM
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Case: Y3-DCB
Technology: Field Stop; Trench
Electrical mounting: FASTON connectors; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Max. off-state voltage: 1.2kV
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IXFT100N30X3HV pVersion=0046&contRep=ZT&docId=005056AB82531EE990FBCDA1FA5458BF&compId=IXF_100N30X3_HV.pdf?ci_sign=291cad4ee4c338832090f6d9d224fee09028d26c pVersion=0046&contRep=ZT&docId=005056AB82531EE990FC1CCCD2D4B8BF&compId=300VProductBrief.pdf?ci_sign=243527b0db45b2a88c7e85e44a9cf5e3419beb5c
IXFT100N30X3HV
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 100A; 480W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 100A
Power dissipation: 480W
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 13.5mΩ
Mounting: SMD
Gate charge: 122nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 130ns
Technology: HiPerFET™; X3-Class
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IXBT2N250 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAFD07043005820&compId=IXBH(T)2N250.pdf?ci_sign=adab234c75aabbb58f5d98046e17708bb23548a0
IXBT2N250
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 2.5kV; 2A; 32W; TO268
Case: TO268
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Mounting: SMD
Gate charge: 10.6nC
Turn-on time: 310ns
Turn-off time: 252ns
Power dissipation: 32W
Collector current: 2A
Pulsed collector current: 13A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 2.5kV
Kind of package: tube
Technology: BiMOSFET™
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1343.99 грн
В кошику  од. на суму  грн.
IXTP3N120 pVersion=0046&contRep=ZT&docId=005056AB82531EE9939639605145D8BF&compId=IXT_3N120.pdf?ci_sign=d609b50c6bcbcefe4c172ac69adac53131300bfe
IXTP3N120
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 3A; 200W; TO220AB; 700ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 3A
Power dissipation: 200W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.5Ω
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 700ns
на замовлення 295 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+551.10 грн
3+407.01 грн
7+384.79 грн
100+370.51 грн
В кошику  од. на суму  грн.
IXTH3N120 pVersion=0046&contRep=ZT&docId=005056AB82531EE9939639605145D8BF&compId=IXT_3N120.pdf?ci_sign=d609b50c6bcbcefe4c172ac69adac53131300bfe
IXTH3N120
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 3A; 200W; TO247-3; 700ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 3A
Power dissipation: 200W
Case: TO247-3
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 700ns
Features of semiconductor devices: standard power mosfet
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IXFP3N120 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9557C6A2D820&compId=IXFP3N120.pdf?ci_sign=eea5a63569752789e65884b7dc57c6064d9f42e7
IXFP3N120
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 3A; 200W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 3A
Power dissipation: 200W
Case: TO220AB
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhancement
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IXTA3N120 pVersion=0046&contRep=ZT&docId=005056AB82531EE9939639605145D8BF&compId=IXT_3N120.pdf?ci_sign=d609b50c6bcbcefe4c172ac69adac53131300bfe
IXTA3N120
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 3A; 200W; TO263; 700ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 3A
Power dissipation: 200W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 4.5Ω
Mounting: SMD
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 700ns
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IXTA3N120HV pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9618AC871820&compId=IXTA3N120HV.pdf?ci_sign=cc2fbe5c647ead4e5e76f0a4ba3c372cb9cc3e1b
IXTA3N120HV
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 3A; 200W; TO263HV; 700ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 3A
Power dissipation: 200W
Case: TO263HV
Mounting: SMD
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 700ns
Features of semiconductor devices: standard power mosfet
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IXTK100N25P pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF90F1896B593E27&compId=IXTK100N25P-DTE.pdf?ci_sign=ca4a750df92eea9f262967bae79b2712e1f8dcc2
IXTK100N25P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 250V; 100A; 600W; TO264
Gate-source voltage: ±20V
Power dissipation: 600W
Drain-source voltage: 250V
Drain current: 100A
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: PolarHT™
Mounting: THT
Case: TO264
Kind of package: tube
Polarisation: unipolar
Gate charge: 185nC
Reverse recovery time: 200ns
On-state resistance: 27mΩ
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IXFX180N15P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9618AC683820&compId=IXFX180N15P.pdf?ci_sign=40187178a4b225c5dfde0aad35e7695313904b5e
IXFX180N15P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 180A; 830W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 180A
Power dissipation: 830W
Case: PLUS247™
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 2 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+394.74 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXFK180N25T pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D54A180A387820&compId=IXFK(X)180N25T.pdf?ci_sign=df55105c078d9abc2821a1e455a37ba5cb1f4c8f
IXFK180N25T
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 180A; 1390W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 180A
Power dissipation: 1390W
Case: TO264
On-state resistance: 12.9mΩ
Mounting: THT
Gate charge: 364nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
на замовлення 23 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1184.21 грн
3+1039.33 грн
5+1007.60 грн
10+999.66 грн
В кошику  од. на суму  грн.
IXFT30N85XHV pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CC2992D6C47820&compId=IXFH30N85X_IXFT30N85XHV.pdf?ci_sign=390b5581f76a713c23254cf56e292a2a68f13ab2
IXFT30N85XHV
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 30A; 695W; TO268HV; 160ns
Mounting: SMD
Case: TO268HV
Kind of package: tube
Polarisation: unipolar
Gate charge: 68nC
Reverse recovery time: 160ns
On-state resistance: 0.23Ω
Drain current: 30A
Power dissipation: 695W
Drain-source voltage: 850V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Features of semiconductor devices: ultra junction x-class
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DSI30-16AS pVersion=0046&contRep=ZT&docId=005056AB82531EE98AD640807D25B8BF&compId=DSI30-16AS.pdf?ci_sign=cfb14604109bfeb6853a2d73a81795d58f27df7d
DSI30-16AS
Виробник: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.6kV; 30A; D2PAK; Ufmax: 1.25V; Ifsm: 255A
Mounting: SMD
Case: D2PAK
Max. forward voltage: 1.25V
Load current: 30A
Max. forward impulse current: 255A
Max. off-state voltage: 1.6kV
Power dissipation: 160W
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: rectifying
на замовлення 24 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+279.39 грн
6+164.23 грн
16+155.50 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
DMA30IM1600PZ-TUB pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCB44828817100C4&compId=DMA30IM1600PZ.pdf?ci_sign=4c14a69c06510d6b4ac4e711990bb7aba5b75b6b
DMA30IM1600PZ-TUB
Виробник: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.6kV; 30A; TO263ABHV; Ufmax: 1.26V; 210W
Mounting: SMD
Case: TO263ABHV
Max. forward voltage: 1.26V
Load current: 30A
Max. forward impulse current: 255A
Max. off-state voltage: 1.6kV
Power dissipation: 210W
Kind of package: tube
Semiconductor structure: single diode
Type of diode: rectifying
на замовлення 48 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+157.09 грн
8+131.70 грн
20+124.56 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
DSI30-12AS-TUB pVersion=0046&contRep=ZT&docId=005056AB82531EE98AD6220BAB21F8BF&compId=DSI30-12AS.pdf?ci_sign=a820b6b43ca6d425507016409b4cfb52adb13ae0
DSI30-12AS-TUB
Виробник: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 30A; D2PAK; Ufmax: 1.25V; Ifsm: 255A
Mounting: SMD
Case: D2PAK
Max. forward voltage: 1.25V
Load current: 30A
Max. forward impulse current: 255A
Max. off-state voltage: 1.2kV
Power dissipation: 160W
Kind of package: tube
Semiconductor structure: single diode
Type of diode: rectifying
на замовлення 94 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+248.63 грн
8+130.91 грн
20+122.97 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
LF21904NTR pVersion=0046&contRep=ZT&docId=005056AB281E1EDC91F2B68AE8C680CE&compId=LF21904NTR.pdf?ci_sign=f046af4b59b042a640f6da7511355db6af15f8d3
LF21904NTR
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO14; -4.5÷4.5A
Case: SO14
Mounting: SMD
Kind of package: reel; tape
Number of channels: 2
Supply voltage: 10...20V
Voltage class: 600V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT half-bridge; MOSFET half-bridge
Operating temperature: -40...125°C
Output current: -4.5...4.5A
товару немає в наявності
В кошику  од. на суму  грн.
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