| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||
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DSEK60-02AR | IXYS |
 Category: THT universal diodesDescription: Diode: rectifying; THT; 200V; 34Ax2; Ifsm: 325A; ISOPLUS247™; tube Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 34A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: fast switching Max. forward impulse current: 325A Case: ISOPLUS247™ Kind of package: tube Max. forward voltage: 1.1V Power dissipation: 125W Reverse recovery time: 35ns Technology: FRED |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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DNA30E2200PA | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 2.2kV; 30A; tube; Ifsm: 315A; TO220AC; 210W Mounting: THT Max. forward impulse current: 315A Max. forward voltage: 1.24V Power dissipation: 210W Max. off-state voltage: 2.2kV Load current: 30A Kind of package: tube Semiconductor structure: single diode Case: TO220AC Type of diode: rectifying |
на замовлення 294 шт: термін постачання 14-30 дні (днів) |
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DNA30E2200FE | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 2.2kV; 30A; Ifsm: 370A; tube; Ufmax: 1.22V Mounting: THT Max. forward impulse current: 370A Max. forward voltage: 1.22V Power dissipation: 110W Features of semiconductor devices: high voltage Max. off-state voltage: 2.2kV Load current: 30A Kind of package: tube Semiconductor structure: single diode Case: ISOPLUS i4-pac™ x024e Type of diode: rectifying |
на замовлення 226 шт: термін постачання 14-30 дні (днів) |
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| IXDI614SITR | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,MOSFET gate driver; SOIC8; 14A; Ch: 1; MOSFET Type of integrated circuit: driver Kind of integrated circuit: low-side; MOSFET gate driver Case: SOIC8 Output current: 14A Number of channels: 1 Integrated circuit features: MOSFET Mounting: SMD Operating temperature: -40...125°C Impulse rise time: 25ns Pulse fall time: 18ns Application: automotive industry Maximum output current: 14A Supply voltage: 4.5...35V Kind of output: N-Channel |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | |||||||||||||
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IXFR26N100P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 15A; 290W; ISOPLUS247™ Mounting: THT Kind of package: tube Type of transistor: N-MOSFET Case: ISOPLUS247™ On-state resistance: 0.43Ω Power dissipation: 290W Gate charge: 197nC Polarisation: unipolar Drain current: 15A Kind of channel: enhancement Drain-source voltage: 1kV |
на замовлення 6 шт: термін постачання 14-30 дні (днів) |
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IXTP1R6N100D2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 1.6A; 100W; TO220AB; 11ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 1.6A Power dissipation: 100W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 10Ω Mounting: THT Kind of package: tube Kind of channel: depletion Reverse recovery time: 11ns Gate charge: 645nC |
на замовлення 253 шт: термін постачання 14-30 дні (днів) |
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IXTY1R6N100D2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 1.6A; 100W; TO252; 11ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 1.6A Power dissipation: 100W Case: TO252 Gate-source voltage: ±20V On-state resistance: 10Ω Mounting: SMD Kind of package: tube Kind of channel: depletion Reverse recovery time: 11ns Gate charge: 645nC |
на замовлення 350 шт: термін постачання 14-30 дні (днів) |
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IXTA1R6N100D2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 1.6A; 100W; TO263; 11ns Mounting: SMD Kind of channel: depletion Drain-source voltage: 1kV Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: tube Case: TO263 On-state resistance: 10Ω Reverse recovery time: 11ns Power dissipation: 100W Gate charge: 645nC Polarisation: unipolar Drain current: 1.6A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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IXTA1R6N100D2HV | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 1.6A; 100W; TO263 Mounting: SMD Kind of channel: depletion Drain-source voltage: 1kV Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: tube Case: TO263 On-state resistance: 10Ω Reverse recovery time: 970ns Power dissipation: 100W Gate charge: 27nC Polarisation: unipolar Technology: Polar™ Drain current: 1.6A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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CPC1117NTR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 150mA; max.60VAC Type of relay: solid state Contacts configuration: SPST-NC Control current max.: 50mA Max. operating current: 150mA Switched voltage: max. 60V AC; max. 60V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 16Ω Mounting: SMT Case: SOP4 Body dimensions: 4.09x3.81x2.03mm Insulation voltage: 1.5kV Turn-on time: 10ms Turn-off time: 10ms Kind of output: MOSFET Operating temperature: -40...85°C |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||
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CPC1014NTR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 400mA; max.60VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 0.4A Switched voltage: max. 60V AC; max. 60V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 2Ω Mounting: SMT Case: SOP4 Body dimensions: 4.09x3.81x2.03mm Insulation voltage: 1.5kV Turn-on time: 2ms Turn-off time: 1ms Operating temperature: -40...85°C Kind of output: MOSFET |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||
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IXTY44N10T | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 44A; 130W; TO252; 60ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 44A Power dissipation: 130W Case: TO252 On-state resistance: 30mΩ Mounting: SMD Kind of package: tube Kind of channel: enhancement Reverse recovery time: 60ns Features of semiconductor devices: thrench gate power mosfet |
на замовлення 397 шт: термін постачання 14-30 дні (днів) |
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| MCC72-08io1B | IXYS |
Category: Thyristor modules Description: Module: thyristor; double series; 800V; 116A; TO240AA; Ufmax: 1.82V Type of semiconductor module: thyristor Semiconductor structure: double series Max. off-state voltage: 0.8kV Load current: 116A Case: TO240AA Max. forward voltage: 1.82V Gate current: 150/200mA Electrical mounting: screw Kind of package: bulk Mechanical mounting: screw |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| MCC72-08io8B | IXYS |
Category: Thyristor modules Description: Module: thyristor; double series; 800V; 116A; TO240AA; Ufmax: 1.82V Type of semiconductor module: thyristor Semiconductor structure: double series Max. off-state voltage: 0.8kV Load current: 116A Case: TO240AA Max. forward voltage: 1.82V Gate current: 150/200mA Electrical mounting: screw Kind of package: bulk Mechanical mounting: screw |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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DSEI2X121-02A | IXYS |
Category: Diode modules Description: Module: diode; double independent; 200V; If: 123Ax2; SOT227B; screw Type of semiconductor module: diode Semiconductor structure: double independent Max. off-state voltage: 200V Load current: 123A x2 Case: SOT227B Max. forward voltage: 1.1V Max. forward impulse current: 1.3kA Electrical mounting: screw Max. load current: 246A Mechanical mounting: screw Kind of package: tube |
на замовлення 48 шт: термін постачання 14-30 дні (днів) |
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CPC1130NTR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC Type of relay: solid state Contacts configuration: SPST-NC Control current max.: 50mA Max. operating current: 120mA Switched voltage: max. 350V AC; max. 350V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 30Ω Mounting: SMT Case: SOP4 Body dimensions: 4.09x3.81x2.03mm Insulation voltage: 1.5kV Turn-on time: 2ms Turn-off time: 2ms Kind of output: MOSFET Operating temperature: -40...85°C |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||
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CPC1114N | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 400mA; max.60VAC Type of relay: solid state Max. operating current: 0.4A Switched voltage: max. 60V AC; max. 60V DC Relay variant: 1-phase; current source Body dimensions: 4.09x3.81x2.03mm Manufacturer series: OptoMOS Operating temperature: -40...85°C Insulation voltage: 1.5kV Turn-on time: 2ms Case: SOP4 Turn-off time: 5ms Control current max.: 50mA On-state resistance: 2Ω Mounting: SMT Kind of output: MOSFET Contacts configuration: SPST-NC |
на замовлення 608 шт: термін постачання 14-30 дні (днів) |
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CPC1114NTR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 400mA; max.60VAC Type of relay: solid state Contacts configuration: SPST-NC Control current max.: 50mA Max. operating current: 0.4A Switched voltage: max. 60V AC; max. 60V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 2Ω Mounting: SMT Case: SOP4 Body dimensions: 4.09x3.81x2.03mm Insulation voltage: 1.5kV Turn-on time: 2ms Turn-off time: 5ms Kind of output: MOSFET Operating temperature: -40...85°C |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||
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CS45-16IO1 | IXYS |
 Category: SMD/THT thyristorsDescription: Thyristor; 1600V; Ifmax: 71A; 45A; Igt: 80mA; TO247AD; THT; tube Type of thyristor: thyristor Max. off-state voltage: 1.6kV Max. load current: 71A Load current: 45A Gate current: 80mA Case: TO247AD Mounting: THT Kind of package: tube Max. forward impulse current: 520A |
на замовлення 30 шт: термін постачання 14-30 дні (днів) |
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CS45-16IO1R | IXYS |
Category: SMD/THT thyristors Description: Thyristor: standard; 1.6kV; Ifmax: 71A; 45A; Igt: 80mA; TO247AD; THT Case: TO247AD Mounting: THT Kind of package: tube Max. forward impulse current: 520A Gate current: 80mA Max. off-state voltage: 1.6kV Load current: 45A Max. load current: 71A Type of thyristor: standard |
на замовлення 197 шт: термін постачання 14-30 дні (днів) |
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CS45-12IO1 | IXYS |
Category: SMD/THT thyristors Description: Thyristor: standard; 1.2kV; Ifmax: 71A; 45A; Igt: 80mA; TO247AD; THT Mounting: THT Max. forward impulse current: 520A Gate current: 80mA Max. off-state voltage: 1.2kV Load current: 45A Max. load current: 71A Kind of package: tube Case: TO247AD Type of thyristor: standard |
на замовлення 20 шт: термін постачання 14-30 дні (днів) |
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IXTP100N04T2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 150W; TO220AB; 34ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 100A Power dissipation: 150W Case: TO220AB On-state resistance: 7mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 34ns |
на замовлення 300 шт: термін постачання 14-30 дні (днів) |
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IXTP48P05T | IXYS |
Category: THT P channel transistors Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -48A; 150W; TO220AB Type of transistor: P-MOSFET Technology: TrenchP™ Polarisation: unipolar Drain-source voltage: -50V Drain current: -48A Power dissipation: 150W Case: TO220AB Gate-source voltage: ±15V On-state resistance: 30mΩ Mounting: THT Gate charge: 53nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 30ns |
на замовлення 291 шт: термін постачання 14-30 дні (днів) |
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IXTY48P05T | IXYS |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -48A; 150W; TO252 Case: TO252 Mounting: SMD Kind of package: tube Power dissipation: 150W Gate charge: 53nC Polarisation: unipolar Technology: TrenchP™ Drain current: -48A Kind of channel: enhancement Drain-source voltage: -50V Type of transistor: P-MOSFET Gate-source voltage: ±15V On-state resistance: 30mΩ Reverse recovery time: 30ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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IXTA48P05T | IXYS |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -48A; 150W; TO263 Case: TO263 Mounting: SMD Kind of package: tube Power dissipation: 150W Gate charge: 53nC Polarisation: unipolar Technology: TrenchP™ Drain current: -48A Kind of channel: enhancement Drain-source voltage: -50V Type of transistor: P-MOSFET Gate-source voltage: ±15V On-state resistance: 30mΩ Reverse recovery time: 30ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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IXTA48P05T-TRL | IXYS |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; 50V; 48A; 150W; D2PAK,TO263 Case: D2PAK; TO263 Mounting: SMD Power dissipation: 150W Drain current: 48A Kind of channel: enhancement Drain-source voltage: 50V Type of transistor: P-MOSFET Gate-source voltage: 15V On-state resistance: 30mΩ |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||||
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IXTY48P05T-TRL | IXYS |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; 50V; 48A; 150W; DPAK,TO252AA Case: DPAK; TO252AA Mounting: SMD Power dissipation: 150W Drain current: 48A Kind of channel: enhancement Drain-source voltage: 50V Type of transistor: P-MOSFET Gate-source voltage: 15V On-state resistance: 30mΩ |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||
| NCD2400MTR | IXYS |
Category: Integrated circuits - others Description: IC: digital capacitor; 2-wire,I2C; EEPROM,non-volatile; DFN6 Mounting: SMD Operating temperature: -40...105°C Number of positions: 512 Kind of memory: EEPROM; non-volatile Supply voltage: 2.5...5.5V Type of integrated circuit: digital capacitor Integrated circuit features: programmable Application: for OCXO application Kind of package: reel; tape Case: DFN6 Interface: 2-wire; I2C Capacitance: 1.7...203pF |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||
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IXDH20N120 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; NPT; 1.2kV; 25A; 200W; TO247-3 Type of transistor: IGBT Technology: NPT Collector-emitter voltage: 1.2kV Collector current: 25A Power dissipation: 200W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 50A Mounting: THT Gate charge: 70nC Kind of package: tube Turn-on time: 175ns Turn-off time: 570ns |
на замовлення 176 шт: термін постачання 14-30 дні (днів) |
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CPC1966Y | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; Icntrl max: 50mA; 3000mA; max.240VAC; 1-phase Type of relay: solid state Mounting: THT Relay variant: 1-phase Body dimensions: 21.08x10.16x3.3mm Operating temperature: -40...85°C Insulation voltage: 3.75kV Switching method: zero voltage switching Switched voltage: max. 240V AC Case: SIP4 Max. operating current: 3A Control current max.: 50mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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CPC1966YX6 | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; Icntrl max: 50mA; 3000mA; max.600VAC; 1-phase Type of relay: solid state Mounting: THT Relay variant: 1-phase Body dimensions: 21.08x10.16x3.3mm Operating temperature: -40...85°C Insulation voltage: 3.75kV Turn-on time: 500µs Switching method: instantaneous switching Switched voltage: max. 600V AC Case: SIP4 Max. operating current: 3A Control current max.: 50mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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IXFH60N50P3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 60A; 1040W; TO247-3 Type of transistor: N-MOSFET Technology: HiPerFET™; Polar3™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 60A Power dissipation: 1.04kW Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.11Ω Mounting: THT Gate charge: 96nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 250ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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CPC1906Y | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 2000mA; max.60VAC Type of relay: solid state Mounting: THT Manufacturer series: OptoMOS Relay variant: 1-phase; current source Kind of output: MOSFET Body dimensions: 21.08x10.16x3.3mm Operating temperature: -40...85°C Contacts configuration: SPST-NO Insulation voltage: 2.5kV Turn-on time: 10ms Switched voltage: max. 60V AC; max. 60V DC Case: SIP4 Max. operating current: 2A Turn-off time: 5ms Control current max.: 50mA On-state resistance: 0.3Ω |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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MIXA10WB1200TED | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 12A Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Type of semiconductor module: IGBT Power dissipation: 60W Technology: Sonic FRD™; XPT™ Mechanical mounting: screw Pulsed collector current: 30A Application: motors; photovoltaics Max. off-state voltage: 1.2kV Electrical mounting: Press-in PCB Semiconductor structure: diode/transistor Case: E2-Pack Gate-emitter voltage: ±20V Collector current: 12A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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CLB30I1200HB | IXYS |
Category: SMD/THT thyristors Description: Thyristor: standard; 1.2kV; Ifmax: 47A; 30A; Igt: 50mA; TO247AD; THT Max. off-state voltage: 1.2kV Load current: 30A Max. forward impulse current: 325A Case: TO247AD Gate current: 50mA Max. load current: 47A Kind of package: tube Type of thyristor: standard Mounting: THT |
на замовлення 39 шт: термін постачання 14-30 дні (днів) |
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CLB30I1200PZ-TUB | IXYS |
Category: SMD/THT thyristors Description: Thyristor: standard; 1.2kV; Ifmax: 47A; 30A; Igt: 30/50mA; TO263ABHV Max. off-state voltage: 1.2kV Load current: 30A Max. forward impulse current: 255A Case: TO263ABHV Gate current: 30/50mA Max. load current: 47A Kind of package: tube Type of thyristor: standard Mounting: SMD |
на замовлення 5 шт: термін постачання 14-30 дні (днів) |
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CLB30I1200PZ-TRL | IXYS |
Category: SMD/THT thyristors Description: Thyristor; 1.2kV; Ifmax: 47A; 30A; Igt: 30mA; D2PAK; SMD; reel,tape Case: D2PAK Mounting: SMD Max. off-state voltage: 1.2kV Load current: 30A Kind of package: reel; tape Type of thyristor: thyristor Gate current: 30mA Max. load current: 47A |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||||
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LBA110 | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA Type of relay: solid state Contacts configuration: SPST-NO + SPST-NC Max. operating current: 120mA Switched voltage: max. 350V AC; max. 350V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 35Ω Mounting: THT Case: DIP8 Operating temperature: -40...85°C Body dimensions: 9.65x6.35x3.3mm Insulation voltage: 3.75kV Turn-on time: 3ms Turn-off time: 3ms Control current max.: 50mA |
на замовлення 105 шт: термін постачання 14-30 дні (днів) |
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LBA110S | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA Type of relay: solid state Contacts configuration: SPST-NO + SPST-NC Control current max.: 50mA Max. operating current: 120mA Switched voltage: max. 350V AC; max. 350V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 35Ω Mounting: SMT Case: DIP8 Body dimensions: 9.65x6.35x3.3mm Insulation voltage: 3.75kV Turn-on time: 3ms Turn-off time: 3ms Operating temperature: -40...85°C |
на замовлення 227 шт: термін постачання 14-30 дні (днів) |
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LBA110L | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA Type of relay: solid state Contacts configuration: SPST-NO + SPST-NC Control current max.: 50mA Max. operating current: 120mA Switched voltage: max. 350V AC; max. 350V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 35Ω Mounting: THT Case: DIP8 Body dimensions: 9.66x6.35x3.3mm Insulation voltage: 3.75kV Turn-on time: 3ms Turn-off time: 3ms Operating temperature: -40...85°C |
на замовлення 100 шт: термін постачання 14-30 дні (днів) |
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CPC1010N | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.250VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 0.17A Switched voltage: max. 250V AC; max. 250V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 11.5Ω Mounting: SMT Case: SOP4 Body dimensions: 4.09x3.81x2.03mm Insulation voltage: 1.5kV Turn-on time: 3ms Turn-off time: 3ms Operating temperature: -40...85°C Kind of output: MOSFET |
товару немає в наявності |
Мінімальне замовлення: 500 шт В кошику од. на суму грн. | ||||||||||||
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CPC1010NTR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.250VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 0.17A Switched voltage: max. 250V AC; max. 250V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 11.5Ω Mounting: SMT Case: SOP4 Body dimensions: 4.09x3.81x2.03mm Insulation voltage: 1.5kV Turn-on time: 3ms Turn-off time: 3ms Operating temperature: -40...85°C Kind of output: MOSFET |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||
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CPC1016NTR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.100VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 0.1A Switched voltage: max. 100V AC; max. 100V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 16Ω Mounting: SMT Case: SOP4 Body dimensions: 4.09x3.81x2.03mm Insulation voltage: 1.5kV Turn-on time: 2ms Turn-off time: 1ms Operating temperature: -40...85°C Kind of output: MOSFET |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||
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CPC1019NTR | IXYS |
Category: DC Solid State Relays Description: Relay: solid state; 750mA; max.60VDC; SMT; SOP4; OptoMOS; t(on): 3ms Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 750mA Switched voltage: max. 60V DC Manufacturer series: OptoMOS On-state resistance: 0.6Ω Mounting: SMT Case: SOP4 Body dimensions: 4.09x3.81x2.03mm Insulation voltage: 1.5kV Turn-on time: 3ms Turn-off time: 3ms Operating temperature: -40...85°C Kind of output: MOSFET |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||
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IXTQ200N10T | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 200A; 550W; TO3P; 76ns Case: TO3P Mounting: THT Kind of package: tube Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 152nC Reverse recovery time: 76ns On-state resistance: 5.5mΩ Drain current: 200A Drain-source voltage: 100V Power dissipation: 550W Kind of channel: enhancement Features of semiconductor devices: thrench gate power mosfet |
на замовлення 1 шт: термін постачання 14-30 дні (днів) |
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IXGP20N120B | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 40A; TO220-3 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 40A Case: TO220-3 Gate-emitter voltage: ±20V Pulsed collector current: 100A Mounting: THT Gate charge: 72nC Kind of package: tube Turn-off time: 150ns |
товару немає в наявності |
Мінімальне замовлення: 300 шт В кошику од. на суму грн. | ||||||||||||
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IXXH80N65B4 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX4™; 650V; 80A; 625W; TO247-3 Mounting: THT Collector-emitter voltage: 650V Power dissipation: 625W Gate charge: 0.12µC Technology: GenX4™; Trench; XPT™ Pulsed collector current: 430A Type of transistor: IGBT Turn-on time: 125ns Kind of package: tube Case: TO247-3 Turn-off time: 222ns Gate-emitter voltage: ±20V Collector current: 80A |
на замовлення 239 шт: термін постачання 14-30 дні (днів) |
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DPF80C200HB | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 200V; 40Ax2; tube; Ifsm: 560A; TO247-3; 215W Kind of package: tube Case: TO247-3 Features of semiconductor devices: fast switching Mounting: THT Technology: HiPerFRED™ 2nd Gen Type of diode: rectifying Reverse recovery time: 55ns Max. forward voltage: 1.22V Power dissipation: 215W Load current: 40A x2 Max. off-state voltage: 200V Max. forward impulse current: 560A Semiconductor structure: common cathode; double |
на замовлення 1 шт: термін постачання 14-30 дні (днів) |
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IXFH110N25T | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 110A; 694W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 110A Power dissipation: 694W Case: TO247-3 On-state resistance: 26mΩ Mounting: THT Gate charge: 157nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: thrench gate power mosfet |
на замовлення 256 шт: термін постачання 14-30 дні (днів) |
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IXTP110N055T2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 110A; 180W; TO220AB; 38ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 55V Drain current: 110A Power dissipation: 180W Case: TO220AB On-state resistance: 6.6mΩ Mounting: THT Gate charge: 57nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 38ns |
на замовлення 278 шт: термін постачання 14-30 дні (днів) |
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IXFH110N15T2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 110A; 480W; TO247-3; 85ns Case: TO247-3 Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: thrench gate power mosfet Type of transistor: N-MOSFET Mounting: THT Polarisation: unipolar Gate charge: 150nC Reverse recovery time: 85ns On-state resistance: 13mΩ Drain current: 110A Drain-source voltage: 150V Power dissipation: 480W |
на замовлення 284 шт: термін постачання 14-30 дні (днів) |
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IXTH110N25T | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 110A; 694W; TO247-3; 170ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 110A Power dissipation: 694W Case: TO247-3 On-state resistance: 26mΩ Mounting: THT Gate charge: 157nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 170ns Features of semiconductor devices: thrench gate power mosfet |
на замовлення 9 шт: термін постачання 14-30 дні (днів) |
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IXFA110N15T2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 110A; 480W; TO263; 85ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 110A Power dissipation: 480W Case: TO263 On-state resistance: 13mΩ Mounting: SMD Gate charge: 150nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 85ns |
на замовлення 37 шт: термін постачання 14-30 дні (днів) |
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IXFH110N10P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 110A; 480W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 110A Power dissipation: 480W Case: TO247-3 On-state resistance: 15mΩ Mounting: THT Gate charge: 110nC Kind of package: tube Kind of channel: enhancement Technology: HiPerFET™; Polar™ |
на замовлення 171 шт: термін постачання 14-30 дні (днів) |
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DSB60C30PB | IXYS |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 30V; 30Ax2; TO220AB; Ufmax: 0.49V Mounting: THT Type of diode: Schottky rectifying Heatsink thickness: 1.14...1.39mm Max. forward voltage: 0.49V Load current: 30A x2 Max. off-state voltage: 30V Max. forward impulse current: 530A Power dissipation: 145W Case: TO220AB Kind of package: tube Semiconductor structure: common cathode; double |
на замовлення 160 шт: термін постачання 14-30 дні (днів) |
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DSB60C60PB | IXYS |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 60V; 30Ax2; TO220AB; Ufmax: 0.69V Mounting: THT Type of diode: Schottky rectifying Heatsink thickness: 1.14...1.39mm Max. forward voltage: 0.69V Load current: 30A x2 Max. off-state voltage: 60V Max. forward impulse current: 490A Power dissipation: 145W Case: TO220AB Kind of package: tube Semiconductor structure: common cathode; double |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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DSB60C30HB | IXYS |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 30V; 30Ax2; TO247-3; Ufmax: 0.47V Mounting: THT Type of diode: Schottky rectifying Max. forward voltage: 0.47V Load current: 30A x2 Max. off-state voltage: 30V Max. forward impulse current: 570A Power dissipation: 130W Case: TO247-3 Kind of package: tube Semiconductor structure: common cathode; double |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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DSB60C45HB | IXYS |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 45V; 30Ax2; TO247-3; Ufmax: 0.58V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 45V Load current: 30A x2 Semiconductor structure: common cathode; double Case: TO247-3 Max. forward voltage: 0.58V Max. forward impulse current: 570A Power dissipation: 130W Kind of package: tube |
товару немає в наявності |
Мінімальне замовлення: 300 шт В кошику од. на суму грн. | ||||||||||||
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DSB60C45PB | IXYS |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 45V; 30Ax2; TO220AB; Ufmax: 0.6V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 45V Load current: 30A x2 Semiconductor structure: common cathode; double Case: TO220AB Max. forward voltage: 0.6V Max. forward impulse current: 490A Power dissipation: 145W Kind of package: tube Heatsink thickness: 1.14...1.39mm |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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IXYP8N90C3D1 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 900V; 8A; 125W; TO220-3 Mounting: THT Collector-emitter voltage: 900V Power dissipation: 125W Gate charge: 13.3nC Technology: GenX3™; Planar; XPT™ Pulsed collector current: 48A Type of transistor: IGBT Turn-on time: 39ns Kind of package: tube Case: TO220-3 Turn-off time: 238ns Gate-emitter voltage: ±20V Collector current: 8A |
на замовлення 105 шт: термін постачання 14-30 дні (днів) |
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| DSEK60-02AR |
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Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 34Ax2; Ifsm: 325A; ISOPLUS247™; tube
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 34A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Max. forward impulse current: 325A
Case: ISOPLUS247™
Kind of package: tube
Max. forward voltage: 1.1V
Power dissipation: 125W
Reverse recovery time: 35ns
Technology: FRED
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 34Ax2; Ifsm: 325A; ISOPLUS247™; tube
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 34A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Max. forward impulse current: 325A
Case: ISOPLUS247™
Kind of package: tube
Max. forward voltage: 1.1V
Power dissipation: 125W
Reverse recovery time: 35ns
Technology: FRED
товару немає в наявності
В кошику
од. на суму грн.
| DNA30E2200PA |
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Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 2.2kV; 30A; tube; Ifsm: 315A; TO220AC; 210W
Mounting: THT
Max. forward impulse current: 315A
Max. forward voltage: 1.24V
Power dissipation: 210W
Max. off-state voltage: 2.2kV
Load current: 30A
Kind of package: tube
Semiconductor structure: single diode
Case: TO220AC
Type of diode: rectifying
Category: THT universal diodes
Description: Diode: rectifying; THT; 2.2kV; 30A; tube; Ifsm: 315A; TO220AC; 210W
Mounting: THT
Max. forward impulse current: 315A
Max. forward voltage: 1.24V
Power dissipation: 210W
Max. off-state voltage: 2.2kV
Load current: 30A
Kind of package: tube
Semiconductor structure: single diode
Case: TO220AC
Type of diode: rectifying
на замовлення 294 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 309.59 грн |
| 5+ | 271.17 грн |
| 10+ | 254.87 грн |
| 25+ | 219.69 грн |
| 50+ | 200.81 грн |
| DNA30E2200FE |
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Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 2.2kV; 30A; Ifsm: 370A; tube; Ufmax: 1.22V
Mounting: THT
Max. forward impulse current: 370A
Max. forward voltage: 1.22V
Power dissipation: 110W
Features of semiconductor devices: high voltage
Max. off-state voltage: 2.2kV
Load current: 30A
Kind of package: tube
Semiconductor structure: single diode
Case: ISOPLUS i4-pac™ x024e
Type of diode: rectifying
Category: THT universal diodes
Description: Diode: rectifying; THT; 2.2kV; 30A; Ifsm: 370A; tube; Ufmax: 1.22V
Mounting: THT
Max. forward impulse current: 370A
Max. forward voltage: 1.22V
Power dissipation: 110W
Features of semiconductor devices: high voltage
Max. off-state voltage: 2.2kV
Load current: 30A
Kind of package: tube
Semiconductor structure: single diode
Case: ISOPLUS i4-pac™ x024e
Type of diode: rectifying
на замовлення 226 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 865.01 грн |
| 3+ | 477.99 грн |
| 6+ | 452.24 грн |
| 50+ | 435.08 грн |
| IXDI614SITR |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SOIC8; 14A; Ch: 1; MOSFET
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SOIC8
Output current: 14A
Number of channels: 1
Integrated circuit features: MOSFET
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 25ns
Pulse fall time: 18ns
Application: automotive industry
Maximum output current: 14A
Supply voltage: 4.5...35V
Kind of output: N-Channel
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SOIC8; 14A; Ch: 1; MOSFET
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SOIC8
Output current: 14A
Number of channels: 1
Integrated circuit features: MOSFET
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 25ns
Pulse fall time: 18ns
Application: automotive industry
Maximum output current: 14A
Supply voltage: 4.5...35V
Kind of output: N-Channel
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| IXFR26N100P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 15A; 290W; ISOPLUS247™
Mounting: THT
Kind of package: tube
Type of transistor: N-MOSFET
Case: ISOPLUS247™
On-state resistance: 0.43Ω
Power dissipation: 290W
Gate charge: 197nC
Polarisation: unipolar
Drain current: 15A
Kind of channel: enhancement
Drain-source voltage: 1kV
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 15A; 290W; ISOPLUS247™
Mounting: THT
Kind of package: tube
Type of transistor: N-MOSFET
Case: ISOPLUS247™
On-state resistance: 0.43Ω
Power dissipation: 290W
Gate charge: 197nC
Polarisation: unipolar
Drain current: 15A
Kind of channel: enhancement
Drain-source voltage: 1kV
на замовлення 6 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2576.55 грн |
| 2+ | 2262.93 грн |
| 3+ | 2262.07 грн |
| IXTP1R6N100D2 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 1.6A; 100W; TO220AB; 11ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 1.6A
Power dissipation: 100W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: THT
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 11ns
Gate charge: 645nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 1.6A; 100W; TO220AB; 11ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 1.6A
Power dissipation: 100W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: THT
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 11ns
Gate charge: 645nC
на замовлення 253 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 379.83 грн |
| 6+ | 165.62 грн |
| 17+ | 156.18 грн |
| 250+ | 152.75 грн |
| IXTY1R6N100D2 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 1.6A; 100W; TO252; 11ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 1.6A
Power dissipation: 100W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: SMD
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 11ns
Gate charge: 645nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 1.6A; 100W; TO252; 11ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 1.6A
Power dissipation: 100W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: SMD
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 11ns
Gate charge: 645nC
на замовлення 350 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 379.83 грн |
| 6+ | 187.93 грн |
| 15+ | 177.64 грн |
| 140+ | 170.77 грн |
| IXTA1R6N100D2 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 1.6A; 100W; TO263; 11ns
Mounting: SMD
Kind of channel: depletion
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO263
On-state resistance: 10Ω
Reverse recovery time: 11ns
Power dissipation: 100W
Gate charge: 645nC
Polarisation: unipolar
Drain current: 1.6A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 1.6A; 100W; TO263; 11ns
Mounting: SMD
Kind of channel: depletion
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO263
On-state resistance: 10Ω
Reverse recovery time: 11ns
Power dissipation: 100W
Gate charge: 645nC
Polarisation: unipolar
Drain current: 1.6A
товару немає в наявності
В кошику
од. на суму грн.
| IXTA1R6N100D2HV |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 1.6A; 100W; TO263
Mounting: SMD
Kind of channel: depletion
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO263
On-state resistance: 10Ω
Reverse recovery time: 970ns
Power dissipation: 100W
Gate charge: 27nC
Polarisation: unipolar
Technology: Polar™
Drain current: 1.6A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 1.6A; 100W; TO263
Mounting: SMD
Kind of channel: depletion
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO263
On-state resistance: 10Ω
Reverse recovery time: 970ns
Power dissipation: 100W
Gate charge: 27nC
Polarisation: unipolar
Technology: Polar™
Drain current: 1.6A
товару немає в наявності
В кошику
од. на суму грн.
| CPC1117NTR |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 150mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 150mA
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 16Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 10ms
Turn-off time: 10ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 150mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 150mA
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 16Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 10ms
Turn-off time: 10ms
Kind of output: MOSFET
Operating temperature: -40...85°C
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| CPC1014NTR |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 400mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.4A
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 2Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 1ms
Operating temperature: -40...85°C
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 400mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.4A
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 2Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 1ms
Operating temperature: -40...85°C
Kind of output: MOSFET
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
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| IXTY44N10T |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 44A; 130W; TO252; 60ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 44A
Power dissipation: 130W
Case: TO252
On-state resistance: 30mΩ
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 60ns
Features of semiconductor devices: thrench gate power mosfet
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 44A; 130W; TO252; 60ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 44A
Power dissipation: 130W
Case: TO252
On-state resistance: 30mΩ
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 60ns
Features of semiconductor devices: thrench gate power mosfet
на замовлення 397 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 268.93 грн |
| 10+ | 108.13 грн |
| 25+ | 102.12 грн |
| MCC72-08io1B |
|
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 800V; 116A; TO240AA; Ufmax: 1.82V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 0.8kV
Load current: 116A
Case: TO240AA
Max. forward voltage: 1.82V
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; double series; 800V; 116A; TO240AA; Ufmax: 1.82V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 0.8kV
Load current: 116A
Case: TO240AA
Max. forward voltage: 1.82V
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
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В кошику
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| MCC72-08io8B |
|
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 800V; 116A; TO240AA; Ufmax: 1.82V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 0.8kV
Load current: 116A
Case: TO240AA
Max. forward voltage: 1.82V
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; double series; 800V; 116A; TO240AA; Ufmax: 1.82V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 0.8kV
Load current: 116A
Case: TO240AA
Max. forward voltage: 1.82V
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
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| DSEI2X121-02A |
|
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double independent; 200V; If: 123Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 200V
Load current: 123A x2
Case: SOT227B
Max. forward voltage: 1.1V
Max. forward impulse current: 1.3kA
Electrical mounting: screw
Max. load current: 246A
Mechanical mounting: screw
Kind of package: tube
Category: Diode modules
Description: Module: diode; double independent; 200V; If: 123Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 200V
Load current: 123A x2
Case: SOT227B
Max. forward voltage: 1.1V
Max. forward impulse current: 1.3kA
Electrical mounting: screw
Max. load current: 246A
Mechanical mounting: screw
Kind of package: tube
на замовлення 48 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2870.43 грн |
| 5+ | 2484.33 грн |
| 10+ | 2273.23 грн |
| 20+ | 2214.02 грн |
| CPC1130NTR |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 30Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 2ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 30Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 2ms
Kind of output: MOSFET
Operating temperature: -40...85°C
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
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| CPC1114N |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 400mA; max.60VAC
Type of relay: solid state
Max. operating current: 0.4A
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
Body dimensions: 4.09x3.81x2.03mm
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Insulation voltage: 1.5kV
Turn-on time: 2ms
Case: SOP4
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 2Ω
Mounting: SMT
Kind of output: MOSFET
Contacts configuration: SPST-NC
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 400mA; max.60VAC
Type of relay: solid state
Max. operating current: 0.4A
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
Body dimensions: 4.09x3.81x2.03mm
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Insulation voltage: 1.5kV
Turn-on time: 2ms
Case: SOP4
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 2Ω
Mounting: SMT
Kind of output: MOSFET
Contacts configuration: SPST-NC
на замовлення 608 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 214.40 грн |
| 7+ | 162.19 грн |
| 17+ | 153.61 грн |
| CPC1114NTR |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 400mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.4A
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 2Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 400mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.4A
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 2Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| CS45-16IO1 |
|
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1600V; Ifmax: 71A; 45A; Igt: 80mA; TO247AD; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 1.6kV
Max. load current: 71A
Load current: 45A
Gate current: 80mA
Case: TO247AD
Mounting: THT
Kind of package: tube
Max. forward impulse current: 520A
Category: SMD/THT thyristors
Description: Thyristor; 1600V; Ifmax: 71A; 45A; Igt: 80mA; TO247AD; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 1.6kV
Max. load current: 71A
Load current: 45A
Gate current: 80mA
Case: TO247AD
Mounting: THT
Kind of package: tube
Max. forward impulse current: 520A
на замовлення 30 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 386.30 грн |
| 15+ | 338.97 грн |
| CS45-16IO1R |
|
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor: standard; 1.6kV; Ifmax: 71A; 45A; Igt: 80mA; TO247AD; THT
Case: TO247AD
Mounting: THT
Kind of package: tube
Max. forward impulse current: 520A
Gate current: 80mA
Max. off-state voltage: 1.6kV
Load current: 45A
Max. load current: 71A
Type of thyristor: standard
Category: SMD/THT thyristors
Description: Thyristor: standard; 1.6kV; Ifmax: 71A; 45A; Igt: 80mA; TO247AD; THT
Case: TO247AD
Mounting: THT
Kind of package: tube
Max. forward impulse current: 520A
Gate current: 80mA
Max. off-state voltage: 1.6kV
Load current: 45A
Max. load current: 71A
Type of thyristor: standard
на замовлення 197 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 740.25 грн |
| 5+ | 534.62 грн |
| 10+ | 445.38 грн |
| 30+ | 401.61 грн |
| CS45-12IO1 |
|
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor: standard; 1.2kV; Ifmax: 71A; 45A; Igt: 80mA; TO247AD; THT
Mounting: THT
Max. forward impulse current: 520A
Gate current: 80mA
Max. off-state voltage: 1.2kV
Load current: 45A
Max. load current: 71A
Kind of package: tube
Case: TO247AD
Type of thyristor: standard
Category: SMD/THT thyristors
Description: Thyristor: standard; 1.2kV; Ifmax: 71A; 45A; Igt: 80mA; TO247AD; THT
Mounting: THT
Max. forward impulse current: 520A
Gate current: 80mA
Max. off-state voltage: 1.2kV
Load current: 45A
Max. load current: 71A
Kind of package: tube
Case: TO247AD
Type of thyristor: standard
на замовлення 20 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 535.09 грн |
| 5+ | 423.07 грн |
| 10+ | 385.31 грн |
| IXTP100N04T2 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 150W; TO220AB; 34ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 150W
Case: TO220AB
On-state resistance: 7mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 34ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 150W; TO220AB; 34ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 150W
Case: TO220AB
On-state resistance: 7mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 34ns
на замовлення 300 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 283.72 грн |
| 10+ | 105.55 грн |
| 26+ | 99.54 грн |
| IXTP48P05T |
|
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -48A; 150W; TO220AB
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -48A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±15V
On-state resistance: 30mΩ
Mounting: THT
Gate charge: 53nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 30ns
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -48A; 150W; TO220AB
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -48A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±15V
On-state resistance: 30mΩ
Mounting: THT
Gate charge: 53nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 30ns
на замовлення 291 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 416.79 грн |
| 5+ | 199.09 грн |
| 14+ | 187.93 грн |
| 250+ | 181.07 грн |
| IXTY48P05T |
|
Виробник: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -48A; 150W; TO252
Case: TO252
Mounting: SMD
Kind of package: tube
Power dissipation: 150W
Gate charge: 53nC
Polarisation: unipolar
Technology: TrenchP™
Drain current: -48A
Kind of channel: enhancement
Drain-source voltage: -50V
Type of transistor: P-MOSFET
Gate-source voltage: ±15V
On-state resistance: 30mΩ
Reverse recovery time: 30ns
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -48A; 150W; TO252
Case: TO252
Mounting: SMD
Kind of package: tube
Power dissipation: 150W
Gate charge: 53nC
Polarisation: unipolar
Technology: TrenchP™
Drain current: -48A
Kind of channel: enhancement
Drain-source voltage: -50V
Type of transistor: P-MOSFET
Gate-source voltage: ±15V
On-state resistance: 30mΩ
Reverse recovery time: 30ns
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| IXTA48P05T |
|
Виробник: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -48A; 150W; TO263
Case: TO263
Mounting: SMD
Kind of package: tube
Power dissipation: 150W
Gate charge: 53nC
Polarisation: unipolar
Technology: TrenchP™
Drain current: -48A
Kind of channel: enhancement
Drain-source voltage: -50V
Type of transistor: P-MOSFET
Gate-source voltage: ±15V
On-state resistance: 30mΩ
Reverse recovery time: 30ns
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -48A; 150W; TO263
Case: TO263
Mounting: SMD
Kind of package: tube
Power dissipation: 150W
Gate charge: 53nC
Polarisation: unipolar
Technology: TrenchP™
Drain current: -48A
Kind of channel: enhancement
Drain-source voltage: -50V
Type of transistor: P-MOSFET
Gate-source voltage: ±15V
On-state resistance: 30mΩ
Reverse recovery time: 30ns
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од. на суму грн.
| IXTA48P05T-TRL |
|
Виробник: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; 50V; 48A; 150W; D2PAK,TO263
Case: D2PAK; TO263
Mounting: SMD
Power dissipation: 150W
Drain current: 48A
Kind of channel: enhancement
Drain-source voltage: 50V
Type of transistor: P-MOSFET
Gate-source voltage: 15V
On-state resistance: 30mΩ
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; 50V; 48A; 150W; D2PAK,TO263
Case: D2PAK; TO263
Mounting: SMD
Power dissipation: 150W
Drain current: 48A
Kind of channel: enhancement
Drain-source voltage: 50V
Type of transistor: P-MOSFET
Gate-source voltage: 15V
On-state resistance: 30mΩ
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.
| IXTY48P05T-TRL |
|
Виробник: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; 50V; 48A; 150W; DPAK,TO252AA
Case: DPAK; TO252AA
Mounting: SMD
Power dissipation: 150W
Drain current: 48A
Kind of channel: enhancement
Drain-source voltage: 50V
Type of transistor: P-MOSFET
Gate-source voltage: 15V
On-state resistance: 30mΩ
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; 50V; 48A; 150W; DPAK,TO252AA
Case: DPAK; TO252AA
Mounting: SMD
Power dissipation: 150W
Drain current: 48A
Kind of channel: enhancement
Drain-source voltage: 50V
Type of transistor: P-MOSFET
Gate-source voltage: 15V
On-state resistance: 30mΩ
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| NCD2400MTR |
|
Виробник: IXYS
Category: Integrated circuits - others
Description: IC: digital capacitor; 2-wire,I2C; EEPROM,non-volatile; DFN6
Mounting: SMD
Operating temperature: -40...105°C
Number of positions: 512
Kind of memory: EEPROM; non-volatile
Supply voltage: 2.5...5.5V
Type of integrated circuit: digital capacitor
Integrated circuit features: programmable
Application: for OCXO application
Kind of package: reel; tape
Case: DFN6
Interface: 2-wire; I2C
Capacitance: 1.7...203pF
Category: Integrated circuits - others
Description: IC: digital capacitor; 2-wire,I2C; EEPROM,non-volatile; DFN6
Mounting: SMD
Operating temperature: -40...105°C
Number of positions: 512
Kind of memory: EEPROM; non-volatile
Supply voltage: 2.5...5.5V
Type of integrated circuit: digital capacitor
Integrated circuit features: programmable
Application: for OCXO application
Kind of package: reel; tape
Case: DFN6
Interface: 2-wire; I2C
Capacitance: 1.7...203pF
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| IXDH20N120 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 25A; 200W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.2kV
Collector current: 25A
Power dissipation: 200W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 50A
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Turn-on time: 175ns
Turn-off time: 570ns
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 25A; 200W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.2kV
Collector current: 25A
Power dissipation: 200W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 50A
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Turn-on time: 175ns
Turn-off time: 570ns
на замовлення 176 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 578.52 грн |
| 3+ | 365.57 грн |
| 8+ | 345.83 грн |
| CPC1966Y |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 3000mA; max.240VAC; 1-phase
Type of relay: solid state
Mounting: THT
Relay variant: 1-phase
Body dimensions: 21.08x10.16x3.3mm
Operating temperature: -40...85°C
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Switched voltage: max. 240V AC
Case: SIP4
Max. operating current: 3A
Control current max.: 50mA
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 3000mA; max.240VAC; 1-phase
Type of relay: solid state
Mounting: THT
Relay variant: 1-phase
Body dimensions: 21.08x10.16x3.3mm
Operating temperature: -40...85°C
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Switched voltage: max. 240V AC
Case: SIP4
Max. operating current: 3A
Control current max.: 50mA
товару немає в наявності
В кошику
од. на суму грн.
| CPC1966YX6 |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 3000mA; max.600VAC; 1-phase
Type of relay: solid state
Mounting: THT
Relay variant: 1-phase
Body dimensions: 21.08x10.16x3.3mm
Operating temperature: -40...85°C
Insulation voltage: 3.75kV
Turn-on time: 500µs
Switching method: instantaneous switching
Switched voltage: max. 600V AC
Case: SIP4
Max. operating current: 3A
Control current max.: 50mA
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 3000mA; max.600VAC; 1-phase
Type of relay: solid state
Mounting: THT
Relay variant: 1-phase
Body dimensions: 21.08x10.16x3.3mm
Operating temperature: -40...85°C
Insulation voltage: 3.75kV
Turn-on time: 500µs
Switching method: instantaneous switching
Switched voltage: max. 600V AC
Case: SIP4
Max. operating current: 3A
Control current max.: 50mA
товару немає в наявності
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од. на суму грн.
| IXFH60N50P3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 60A; 1040W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar3™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 60A
Power dissipation: 1.04kW
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 96nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 60A; 1040W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar3™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 60A
Power dissipation: 1.04kW
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 96nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
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В кошику
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| CPC1906Y |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 2000mA; max.60VAC
Type of relay: solid state
Mounting: THT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Kind of output: MOSFET
Body dimensions: 21.08x10.16x3.3mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 2.5kV
Turn-on time: 10ms
Switched voltage: max. 60V AC; max. 60V DC
Case: SIP4
Max. operating current: 2A
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 0.3Ω
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 2000mA; max.60VAC
Type of relay: solid state
Mounting: THT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Kind of output: MOSFET
Body dimensions: 21.08x10.16x3.3mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 2.5kV
Turn-on time: 10ms
Switched voltage: max. 60V AC; max. 60V DC
Case: SIP4
Max. operating current: 2A
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 0.3Ω
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В кошику
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| MIXA10WB1200TED |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 12A
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Type of semiconductor module: IGBT
Power dissipation: 60W
Technology: Sonic FRD™; XPT™
Mechanical mounting: screw
Pulsed collector current: 30A
Application: motors; photovoltaics
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Semiconductor structure: diode/transistor
Case: E2-Pack
Gate-emitter voltage: ±20V
Collector current: 12A
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 12A
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Type of semiconductor module: IGBT
Power dissipation: 60W
Technology: Sonic FRD™; XPT™
Mechanical mounting: screw
Pulsed collector current: 30A
Application: motors; photovoltaics
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Semiconductor structure: diode/transistor
Case: E2-Pack
Gate-emitter voltage: ±20V
Collector current: 12A
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В кошику
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| CLB30I1200HB |
|
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor: standard; 1.2kV; Ifmax: 47A; 30A; Igt: 50mA; TO247AD; THT
Max. off-state voltage: 1.2kV
Load current: 30A
Max. forward impulse current: 325A
Case: TO247AD
Gate current: 50mA
Max. load current: 47A
Kind of package: tube
Type of thyristor: standard
Mounting: THT
Category: SMD/THT thyristors
Description: Thyristor: standard; 1.2kV; Ifmax: 47A; 30A; Igt: 50mA; TO247AD; THT
Max. off-state voltage: 1.2kV
Load current: 30A
Max. forward impulse current: 325A
Case: TO247AD
Gate current: 50mA
Max. load current: 47A
Kind of package: tube
Type of thyristor: standard
Mounting: THT
на замовлення 39 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 309.59 грн |
| 3+ | 254.01 грн |
| 10+ | 228.27 грн |
| 30+ | 219.69 грн |
| CLB30I1200PZ-TUB |
|
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor: standard; 1.2kV; Ifmax: 47A; 30A; Igt: 30/50mA; TO263ABHV
Max. off-state voltage: 1.2kV
Load current: 30A
Max. forward impulse current: 255A
Case: TO263ABHV
Gate current: 30/50mA
Max. load current: 47A
Kind of package: tube
Type of thyristor: standard
Mounting: SMD
Category: SMD/THT thyristors
Description: Thyristor: standard; 1.2kV; Ifmax: 47A; 30A; Igt: 30/50mA; TO263ABHV
Max. off-state voltage: 1.2kV
Load current: 30A
Max. forward impulse current: 255A
Case: TO263ABHV
Gate current: 30/50mA
Max. load current: 47A
Kind of package: tube
Type of thyristor: standard
Mounting: SMD
на замовлення 5 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 242.13 грн |
| 3+ | 201.66 грн |
| CLB30I1200PZ-TRL |
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 47A; 30A; Igt: 30mA; D2PAK; SMD; reel,tape
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 30A
Kind of package: reel; tape
Type of thyristor: thyristor
Gate current: 30mA
Max. load current: 47A
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 47A; 30A; Igt: 30mA; D2PAK; SMD; reel,tape
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 30A
Kind of package: reel; tape
Type of thyristor: thyristor
Gate current: 30mA
Max. load current: 47A
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.
| LBA110 |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: THT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Control current max.: 50mA
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: THT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Control current max.: 50mA
на замовлення 105 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 599.78 грн |
| 10+ | 477.99 грн |
| 50+ | 459.97 грн |
| LBA110S |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Operating temperature: -40...85°C
на замовлення 227 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 991.62 грн |
| 50+ | 843.56 грн |
| 100+ | 720.84 грн |
| LBA110L |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: THT
Case: DIP8
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: THT
Case: DIP8
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Operating temperature: -40...85°C
на замовлення 100 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 768.90 грн |
| 10+ | 631.60 грн |
| 50+ | 558.65 грн |
| CPC1010N |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.250VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 11.5Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 3ms
Turn-off time: 3ms
Operating temperature: -40...85°C
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.250VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 11.5Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 3ms
Turn-off time: 3ms
Operating temperature: -40...85°C
Kind of output: MOSFET
товару немає в наявності
Мінімальне замовлення: 500 шт
В кошику
од. на суму грн.
| CPC1010NTR |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.250VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 11.5Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 3ms
Turn-off time: 3ms
Operating temperature: -40...85°C
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.250VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 11.5Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 3ms
Turn-off time: 3ms
Operating temperature: -40...85°C
Kind of output: MOSFET
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| CPC1016NTR |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.100VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 100V AC; max. 100V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 16Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 1ms
Operating temperature: -40...85°C
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.100VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 100V AC; max. 100V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 16Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 1ms
Operating temperature: -40...85°C
Kind of output: MOSFET
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| CPC1019NTR |
|
Виробник: IXYS
Category: DC Solid State Relays
Description: Relay: solid state; 750mA; max.60VDC; SMT; SOP4; OptoMOS; t(on): 3ms
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 750mA
Switched voltage: max. 60V DC
Manufacturer series: OptoMOS
On-state resistance: 0.6Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 3ms
Turn-off time: 3ms
Operating temperature: -40...85°C
Kind of output: MOSFET
Category: DC Solid State Relays
Description: Relay: solid state; 750mA; max.60VDC; SMT; SOP4; OptoMOS; t(on): 3ms
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 750mA
Switched voltage: max. 60V DC
Manufacturer series: OptoMOS
On-state resistance: 0.6Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 3ms
Turn-off time: 3ms
Operating temperature: -40...85°C
Kind of output: MOSFET
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| IXTQ200N10T |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 200A; 550W; TO3P; 76ns
Case: TO3P
Mounting: THT
Kind of package: tube
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 152nC
Reverse recovery time: 76ns
On-state resistance: 5.5mΩ
Drain current: 200A
Drain-source voltage: 100V
Power dissipation: 550W
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 200A; 550W; TO3P; 76ns
Case: TO3P
Mounting: THT
Kind of package: tube
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 152nC
Reverse recovery time: 76ns
On-state resistance: 5.5mΩ
Drain current: 200A
Drain-source voltage: 100V
Power dissipation: 550W
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
на замовлення 1 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 639.52 грн |
| IXGP20N120B |
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; TO220-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Turn-off time: 150ns
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; TO220-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Turn-off time: 150ns
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику
од. на суму грн.
| IXXH80N65B4 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 80A; 625W; TO247-3
Mounting: THT
Collector-emitter voltage: 650V
Power dissipation: 625W
Gate charge: 0.12µC
Technology: GenX4™; Trench; XPT™
Pulsed collector current: 430A
Type of transistor: IGBT
Turn-on time: 125ns
Kind of package: tube
Case: TO247-3
Turn-off time: 222ns
Gate-emitter voltage: ±20V
Collector current: 80A
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 80A; 625W; TO247-3
Mounting: THT
Collector-emitter voltage: 650V
Power dissipation: 625W
Gate charge: 0.12µC
Technology: GenX4™; Trench; XPT™
Pulsed collector current: 430A
Type of transistor: IGBT
Turn-on time: 125ns
Kind of package: tube
Case: TO247-3
Turn-off time: 222ns
Gate-emitter voltage: ±20V
Collector current: 80A
на замовлення 239 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 719.92 грн |
| 10+ | 453.96 грн |
| 30+ | 417.06 грн |
| 60+ | 393.03 грн |
| 120+ | 369.00 грн |
| 150+ | 361.28 грн |
| DPF80C200HB |
|
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 40Ax2; tube; Ifsm: 560A; TO247-3; 215W
Kind of package: tube
Case: TO247-3
Features of semiconductor devices: fast switching
Mounting: THT
Technology: HiPerFRED™ 2nd Gen
Type of diode: rectifying
Reverse recovery time: 55ns
Max. forward voltage: 1.22V
Power dissipation: 215W
Load current: 40A x2
Max. off-state voltage: 200V
Max. forward impulse current: 560A
Semiconductor structure: common cathode; double
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 40Ax2; tube; Ifsm: 560A; TO247-3; 215W
Kind of package: tube
Case: TO247-3
Features of semiconductor devices: fast switching
Mounting: THT
Technology: HiPerFRED™ 2nd Gen
Type of diode: rectifying
Reverse recovery time: 55ns
Max. forward voltage: 1.22V
Power dissipation: 215W
Load current: 40A x2
Max. off-state voltage: 200V
Max. forward impulse current: 560A
Semiconductor structure: common cathode; double
на замовлення 1 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 479.64 грн |
| IXFH110N25T |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 110A; 694W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 110A
Power dissipation: 694W
Case: TO247-3
On-state resistance: 26mΩ
Mounting: THT
Gate charge: 157nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 110A; 694W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 110A
Power dissipation: 694W
Case: TO247-3
On-state resistance: 26mΩ
Mounting: THT
Gate charge: 157nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
на замовлення 256 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 751.34 грн |
| 10+ | 574.96 грн |
| 30+ | 467.69 грн |
| IXTP110N055T2 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 110A; 180W; TO220AB; 38ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 110A
Power dissipation: 180W
Case: TO220AB
On-state resistance: 6.6mΩ
Mounting: THT
Gate charge: 57nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 38ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 110A; 180W; TO220AB; 38ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 110A
Power dissipation: 180W
Case: TO220AB
On-state resistance: 6.6mΩ
Mounting: THT
Gate charge: 57nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 38ns
на замовлення 278 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 241.21 грн |
| 3+ | 192.22 грн |
| 5+ | 170.77 грн |
| 10+ | 137.30 грн |
| 15+ | 120.14 грн |
| 25+ | 115.85 грн |
| IXFH110N15T2 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 110A; 480W; TO247-3; 85ns
Case: TO247-3
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Type of transistor: N-MOSFET
Mounting: THT
Polarisation: unipolar
Gate charge: 150nC
Reverse recovery time: 85ns
On-state resistance: 13mΩ
Drain current: 110A
Drain-source voltage: 150V
Power dissipation: 480W
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 110A; 480W; TO247-3; 85ns
Case: TO247-3
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Type of transistor: N-MOSFET
Mounting: THT
Polarisation: unipolar
Gate charge: 150nC
Reverse recovery time: 85ns
On-state resistance: 13mΩ
Drain current: 110A
Drain-source voltage: 150V
Power dissipation: 480W
на замовлення 284 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 487.96 грн |
| 3+ | 406.76 грн |
| 10+ | 400.75 грн |
| IXTH110N25T |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 110A; 694W; TO247-3; 170ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 110A
Power dissipation: 694W
Case: TO247-3
On-state resistance: 26mΩ
Mounting: THT
Gate charge: 157nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 170ns
Features of semiconductor devices: thrench gate power mosfet
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 110A; 694W; TO247-3; 170ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 110A
Power dissipation: 694W
Case: TO247-3
On-state resistance: 26mΩ
Mounting: THT
Gate charge: 157nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 170ns
Features of semiconductor devices: thrench gate power mosfet
на замовлення 9 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 926.93 грн |
| 3+ | 484.85 грн |
| 6+ | 458.25 грн |
| IXFA110N15T2 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 110A; 480W; TO263; 85ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 110A
Power dissipation: 480W
Case: TO263
On-state resistance: 13mΩ
Mounting: SMD
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 85ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 110A; 480W; TO263; 85ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 110A
Power dissipation: 480W
Case: TO263
On-state resistance: 13mΩ
Mounting: SMD
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 85ns
на замовлення 37 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 481.49 грн |
| IXFH110N10P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 110A; 480W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 110A
Power dissipation: 480W
Case: TO247-3
On-state resistance: 15mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 110A; 480W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 110A
Power dissipation: 480W
Case: TO247-3
On-state resistance: 15mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
на замовлення 171 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 584.99 грн |
| 5+ | 437.65 грн |
| 10+ | 356.99 грн |
| 20+ | 337.25 грн |
| DSB60C30PB |
|
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 30V; 30Ax2; TO220AB; Ufmax: 0.49V
Mounting: THT
Type of diode: Schottky rectifying
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 0.49V
Load current: 30A x2
Max. off-state voltage: 30V
Max. forward impulse current: 530A
Power dissipation: 145W
Case: TO220AB
Kind of package: tube
Semiconductor structure: common cathode; double
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 30V; 30Ax2; TO220AB; Ufmax: 0.49V
Mounting: THT
Type of diode: Schottky rectifying
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 0.49V
Load current: 30A x2
Max. off-state voltage: 30V
Max. forward impulse current: 530A
Power dissipation: 145W
Case: TO220AB
Kind of package: tube
Semiconductor structure: common cathode; double
на замовлення 160 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 115.52 грн |
| 5+ | 96.11 грн |
| 10+ | 84.96 грн |
| 50+ | 76.38 грн |
| DSB60C60PB |
|
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 30Ax2; TO220AB; Ufmax: 0.69V
Mounting: THT
Type of diode: Schottky rectifying
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 0.69V
Load current: 30A x2
Max. off-state voltage: 60V
Max. forward impulse current: 490A
Power dissipation: 145W
Case: TO220AB
Kind of package: tube
Semiconductor structure: common cathode; double
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 30Ax2; TO220AB; Ufmax: 0.69V
Mounting: THT
Type of diode: Schottky rectifying
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 0.69V
Load current: 30A x2
Max. off-state voltage: 60V
Max. forward impulse current: 490A
Power dissipation: 145W
Case: TO220AB
Kind of package: tube
Semiconductor structure: common cathode; double
товару немає в наявності
В кошику
од. на суму грн.
| DSB60C30HB |
|
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 30V; 30Ax2; TO247-3; Ufmax: 0.47V
Mounting: THT
Type of diode: Schottky rectifying
Max. forward voltage: 0.47V
Load current: 30A x2
Max. off-state voltage: 30V
Max. forward impulse current: 570A
Power dissipation: 130W
Case: TO247-3
Kind of package: tube
Semiconductor structure: common cathode; double
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 30V; 30Ax2; TO247-3; Ufmax: 0.47V
Mounting: THT
Type of diode: Schottky rectifying
Max. forward voltage: 0.47V
Load current: 30A x2
Max. off-state voltage: 30V
Max. forward impulse current: 570A
Power dissipation: 130W
Case: TO247-3
Kind of package: tube
Semiconductor structure: common cathode; double
товару немає в наявності
В кошику
од. на суму грн.
| DSB60C45HB |
|
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 30Ax2; TO247-3; Ufmax: 0.58V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 30A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 0.58V
Max. forward impulse current: 570A
Power dissipation: 130W
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 30Ax2; TO247-3; Ufmax: 0.58V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 30A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 0.58V
Max. forward impulse current: 570A
Power dissipation: 130W
Kind of package: tube
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику
од. на суму грн.
| DSB60C45PB |
|
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 30Ax2; TO220AB; Ufmax: 0.6V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 30A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.6V
Max. forward impulse current: 490A
Power dissipation: 145W
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 30Ax2; TO220AB; Ufmax: 0.6V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 30A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.6V
Max. forward impulse current: 490A
Power dissipation: 145W
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
товару немає в наявності
В кошику
од. на суму грн.
| IXYP8N90C3D1 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 8A; 125W; TO220-3
Mounting: THT
Collector-emitter voltage: 900V
Power dissipation: 125W
Gate charge: 13.3nC
Technology: GenX3™; Planar; XPT™
Pulsed collector current: 48A
Type of transistor: IGBT
Turn-on time: 39ns
Kind of package: tube
Case: TO220-3
Turn-off time: 238ns
Gate-emitter voltage: ±20V
Collector current: 8A
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 8A; 125W; TO220-3
Mounting: THT
Collector-emitter voltage: 900V
Power dissipation: 125W
Gate charge: 13.3nC
Technology: GenX3™; Planar; XPT™
Pulsed collector current: 48A
Type of transistor: IGBT
Turn-on time: 39ns
Kind of package: tube
Case: TO220-3
Turn-off time: 238ns
Gate-emitter voltage: ±20V
Collector current: 8A
на замовлення 105 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 292.03 грн |
| 3+ | 243.71 грн |
| 10+ | 215.39 грн |
| 50+ | 193.94 грн |