| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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| CMA50E1600TZ-TUB | IXYS |
 Category: SMD/THT thyristorsDescription: Thyristor; 1.6kV; Ifmax: 79A; 50A; Igt: 50/80mA; TO268AA; SMD; tube Type of thyristor: thyristor Kind of package: tube Gate current: 50/80mA Load current: 50A Case: TO268AA Max. load current: 79A Max. forward impulse current: 470A Max. off-state voltage: 1.6kV Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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CPC2017N | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO x2; Icntrl max: 50000mA; 120mA; 16Ω Case: SO8 On-state resistance: 16Ω Mounting: SMT Relay variant: 1-phase; current source Insulation voltage: 1.5kV Kind of output: MOSFET Manufacturer series: OptoMOS Type of relay: solid state Contacts configuration: SPST-NO x2 Operating temperature: -40...85°C Turn-off time: 3ms Turn-on time: 3ms Body dimensions: 9.35x3.81x2.18mm Control current max.: 50000mA Max. operating current: 120mA Switched voltage: max. 60V AC; max. 60V DC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
| CPC2017NTR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; max.60VAC Case: SO8 On-state resistance: 16Ω Mounting: SMT Relay variant: 1-phase; current source Insulation voltage: 1.5kV Kind of output: MOSFET Manufacturer series: OptoMOS Type of relay: solid state Contacts configuration: SPST-NO x2 Operating temperature: -40...85°C Turn-off time: 3ms Turn-on time: 3ms Body dimensions: 9.35x3.81x2.18mm Control current max.: 50mA Max. operating current: 120mA Switched voltage: max. 60V AC; max. 60V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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CPC2125N | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 100mA; OptoMOS Case: SO8 On-state resistance: 35Ω Mounting: SMT Relay variant: 1-phase; current source Insulation voltage: 1.5kV Kind of output: MOSFET Manufacturer series: OptoMOS Type of relay: solid state Contacts configuration: SPST-NC x2 Operating temperature: -40...85°C Turn-off time: 2ms Turn-on time: 2ms Body dimensions: 9.35x3.81x2.18mm Control current max.: 50mA Max. operating current: 0.1A Switched voltage: max. 400V AC; max. 400V DC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
| CPC2125NTR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 100mA; OptoMOS Case: SO8 On-state resistance: 35Ω Mounting: SMT Relay variant: 1-phase; current source Insulation voltage: 1.5kV Kind of output: MOSFET Manufacturer series: OptoMOS Type of relay: solid state Contacts configuration: SPST-NC x2 Operating temperature: -40...85°C Turn-off time: 2ms Turn-on time: 2ms Body dimensions: 9.35x3.81x2.18mm Control current max.: 50mA Max. operating current: 0.1A Switched voltage: max. 400V AC; max. 400V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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CPC2014N | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 400mA; max.60VAC Case: SO8 On-state resistance: 2Ω Mounting: SMT Relay variant: 1-phase; current source Insulation voltage: 1.5kV Kind of output: MOSFET Manufacturer series: OptoMOS Type of relay: solid state Contacts configuration: SPST-NO x2 Operating temperature: -40...85°C Turn-off time: 1ms Turn-on time: 2ms Body dimensions: 9.35x3.81x2.18mm Control current max.: 50mA Max. operating current: 0.4A Switched voltage: max. 60V AC; max. 60V DC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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CPC2030N | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS Case: SO8 On-state resistance: 30Ω Mounting: SMT Relay variant: 1-phase; current source Insulation voltage: 1.5kV Kind of output: MOSFET Manufacturer series: OptoMOS Type of relay: solid state Contacts configuration: SPST-NO x2 Operating temperature: -40...85°C Turn-off time: 1ms Turn-on time: 2ms Body dimensions: 9.35x3.81x2.18mm Control current max.: 50mA Max. operating current: 120mA Switched voltage: max. 350V AC; max. 350V DC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
| CPC2025NTR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS Case: SO8 On-state resistance: 30Ω Mounting: SMT Relay variant: 1-phase; current source Insulation voltage: 1.5kV Kind of output: MOSFET Manufacturer series: OptoMOS Type of relay: solid state Contacts configuration: SPST-NO x2 Operating temperature: -40...85°C Turn-off time: 1ms Turn-on time: 2ms Body dimensions: 9.35x3.81x2.18mm Control current max.: 50mA Max. operating current: 120mA Switched voltage: max. 400V AC; max. 400V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| CPC2014NTR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 400mA; max.60VAC Case: SO8 On-state resistance: 2Ω Mounting: SMT Relay variant: 1-phase; current source Insulation voltage: 1.5kV Kind of output: MOSFET Manufacturer series: OptoMOS Type of relay: solid state Contacts configuration: SPST-NO x2 Operating temperature: -40...85°C Turn-off time: 1ms Turn-on time: 2ms Body dimensions: 9.35x3.81x2.18mm Control current max.: 50mA Max. operating current: 0.4A Switched voltage: max. 60V AC; max. 60V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| CPC2030NTR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS Case: SO8 On-state resistance: 30Ω Mounting: SMT Relay variant: 1-phase; current source Insulation voltage: 1.5kV Kind of output: MOSFET Manufacturer series: OptoMOS Type of relay: solid state Contacts configuration: SPST-NO x2 Operating temperature: -40...85°C Turn-off time: 1ms Turn-on time: 2ms Body dimensions: 9.35x3.81x2.18mm Control current max.: 50mA Max. operating current: 120mA Switched voltage: max. 350V AC; max. 350V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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VHFD37-16IO1 | IXYS |
Category: Single phase controlled bridge rectif. Description: Bridge rectifier: half-controlled; Urmax: 1.6kV; If: 40A; screw Electrical mounting: FASTON connectors Features of semiconductor devices: field diodes; freewheelling diode Mechanical mounting: screw Type of bridge rectifier: half-controlled Version: module Case: V1-A-Pack Leads dimensions: 2x0.5mm Gate current: 50/80mA Load current: 40A Max. forward impulse current: 280A Max. off-state voltage: 1.6kV Leads: connectors |
на замовлення 15 шт: термін постачання 14-30 дні (днів) |
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LF21064NTR | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO14; Ch: 2 Type of integrated circuit: driver Kind of integrated circuit: gate driver; high-/low-side Case: SO14 Output current: -600...290mA Number of channels: 2 Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Supply voltage: 10...20V Topology: IGBT half-bridge; MOSFET half-bridge Voltage class: 600V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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LF2106NTR | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -600÷290mA Type of integrated circuit: driver Kind of integrated circuit: gate driver; high-/low-side Case: SO8 Output current: -600...290mA Number of channels: 2 Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Supply voltage: 10...20V Topology: IGBT half-bridge; MOSFET half-bridge Voltage class: 600V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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IXFN32N120P | IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 1.2kV; 32A; SOT227B; screw; Idm: 100A Type of semiconductor module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 1.2kV Drain current: 32A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 0.31Ω Pulsed drain current: 100A Power dissipation: 1kW Technology: HiPerFET™; Polar™ Kind of channel: enhancement Gate charge: 360nC Reverse recovery time: 300ns Gate-source voltage: ±40V Mechanical mounting: screw |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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PM1206S | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.600VAC; 1-phase Operating temperature: -40...85°C Mounting: SMT Type of relay: solid state Switching method: zero voltage switching Body dimensions: 9.65x6.35x3.3mm Control current max.: 100mA Max. operating current: 0.5A Switched voltage: max. 600V AC Insulation voltage: 3.75kV Relay variant: 1-phase Case: DIP6 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
| PM1206STR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.600VAC; 1-phase Operating temperature: -40...85°C Mounting: SMT Type of relay: solid state Switching method: zero voltage switching Body dimensions: 9.65x6.35x3.3mm Control current max.: 100mA Max. operating current: 0.5A Switched voltage: max. 600V AC Insulation voltage: 3.75kV Relay variant: 1-phase Case: DIP6 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| MG12100S-BN2MM | IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A Electrical mounting: FASTON connectors; screw Technology: Field Stop; Trench Type of semiconductor module: IGBT Topology: IGBT half-bridge Case: package S Mechanical mounting: screw Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 100A Pulsed collector current: 200A Max. off-state voltage: 1.2kV |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| MG12150W-XN2MM | IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Electrical mounting: Press-in PCB Technology: Field Stop; Trench Type of semiconductor module: IGBT Topology: IGBT three-phase bridge; NTC thermistor Case: package W Mechanical mounting: screw Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 150A Pulsed collector current: 300A Max. off-state voltage: 1.2kV |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| MG12200D-BN2MM | IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A Electrical mounting: FASTON connectors; screw Technology: Field Stop; Trench Type of semiconductor module: IGBT Topology: IGBT half-bridge Case: Y3-DCB Mechanical mounting: screw Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 200A Pulsed collector current: 400A Max. off-state voltage: 1.2kV |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| MG12300D-BN2MM | IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A Electrical mounting: FASTON connectors; screw Technology: Field Stop; Trench Type of semiconductor module: IGBT Topology: IGBT half-bridge Case: Y3-DCB Mechanical mounting: screw Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 300A Pulsed collector current: 600A Max. off-state voltage: 1.2kV |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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DSEC240-04A | IXYS |
 Category: Diode modulesDescription: Module: diode; double,common cathode; 400V; If: 120Ax2; SOT227UI Type of semiconductor module: diode Semiconductor structure: common cathode; double Max. off-state voltage: 0.4kV Load current: 120A x2 Case: SOT227UI Max. forward voltage: 1V Max. forward impulse current: 2kA Electrical mounting: screw Mechanical mounting: screw Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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LOC112S | IXYS |
Category: Optocouplers - others Description: Optocoupler; SMD; Ch: 1; 3.75kV; 1A Type of optocoupler: optocoupler Insulation voltage: 3.75kV Trigger current: 1A Mounting: SMD Number of channels: 1 |
на замовлення 98 шт: термін постачання 14-30 дні (днів) |
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DSA320A100NB | IXYS |
Category: Diode modules Description: Module: diode; double x2,common anode; 100V; 80Ax4; SOT227B; screw Electrical mounting: screw Mechanical mounting: screw Type of semiconductor module: diode Features of semiconductor devices: Schottky Kind of package: tube Case: SOT227B Max. forward voltage: 0.77V Load current: 80A x4 Max. off-state voltage: 100V Semiconductor structure: common anode; double x2 |
на замовлення 3 шт: термін постачання 14-30 дні (днів) |
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IXXH30N65B4 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX4™; 650V; 30A; 230W; TO247-3 Type of transistor: IGBT Technology: GenX4™; Trench; XPT™ Power dissipation: 230W Case: TO247-3 Mounting: THT Gate charge: 52nC Kind of package: tube Collector-emitter voltage: 650V Turn-on time: 65ns Turn-off time: 206ns Gate-emitter voltage: ±20V Collector current: 30A Pulsed collector current: 146A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
| IXYT30N65C3H1HV | IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; GenX3™; 650V; 30A; 270W; TO268HV Type of transistor: IGBT Technology: GenX3™; Planar; Sonic FRD™; XPT™ Power dissipation: 270W Case: TO268HV Mounting: SMD Gate charge: 44nC Kind of package: tube Collector-emitter voltage: 650V Turn-on time: 59ns Turn-off time: 0.12µs Gate-emitter voltage: ±20V Collector current: 30A Pulsed collector current: 118A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| IXXA30N65C3HV | IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; 650V; 52A; 230W; D2PAK Type of transistor: IGBT Power dissipation: 230W Case: D2PAK Mounting: SMD Gate charge: 37nC Kind of package: tube Collector-emitter voltage: 650V Gate-emitter voltage: ±20V Collector current: 52A Pulsed collector current: 113A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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IXXH30N65B4D1 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX4™; 650V; 30A; 230W; TO247-3 Type of transistor: IGBT Technology: GenX4™; Trench; XPT™ Power dissipation: 230W Case: TO247-3 Mounting: THT Gate charge: 52nC Kind of package: tube Collector-emitter voltage: 650V Turn-on time: 65ns Turn-off time: 206ns Gate-emitter voltage: ±20V Collector current: 30A Pulsed collector current: 146A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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IXXH30N65C4D1 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX4™; 650V; 30A; 230W; TO247-3 Type of transistor: IGBT Technology: GenX4™; Trench; XPT™ Power dissipation: 230W Case: TO247-3 Mounting: THT Gate charge: 47nC Kind of package: tube Collector-emitter voltage: 650V Turn-on time: 65ns Turn-off time: 161ns Gate-emitter voltage: ±20V Collector current: 30A Pulsed collector current: 136A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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IXYH30N65C3H1 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 650V; 30A; 270W; TO247-3 Type of transistor: IGBT Technology: GenX3™; Planar; Sonic FRD™; XPT™ Power dissipation: 270W Case: TO247-3 Mounting: THT Gate charge: 44nC Kind of package: tube Collector-emitter voltage: 650V Turn-on time: 59ns Turn-off time: 0.12µs Gate-emitter voltage: ±20V Collector current: 30A Pulsed collector current: 118A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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IXYP30N65C3 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 650V; 30A; 270W; TO220-3 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Power dissipation: 270W Case: TO220-3 Mounting: THT Gate charge: 44nC Kind of package: tube Collector-emitter voltage: 650V Turn-on time: 59ns Turn-off time: 0.12µs Gate-emitter voltage: ±20V Collector current: 30A Pulsed collector current: 118A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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IXFR102N30P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 300V; 60A; 250W; ISOPLUS247™ Mounting: THT Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 224nC On-state resistance: 36mΩ Drain current: 60A Power dissipation: 250W Drain-source voltage: 300V Kind of package: tube Case: ISOPLUS247™ Kind of channel: enhancement |
на замовлення 4 шт: термін постачання 14-30 дні (днів) |
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DSEI30-06A | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 37A; tube; Ifsm: 300A; TO247-2; 125W Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 37A Semiconductor structure: single diode Features of semiconductor devices: fast switching Kind of package: tube Max. forward impulse current: 0.3kA Case: TO247-2 Max. forward voltage: 1.4V Power dissipation: 125W Reverse recovery time: 35ns Technology: FRED |
на замовлення 275 шт: термін постачання 14-30 дні (днів) |
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IXFK120N20P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 120A; 714W; TO264; 100ns Type of transistor: N-MOSFET Kind of package: tube Polarisation: unipolar Reverse recovery time: 100ns Gate charge: 152nC On-state resistance: 22mΩ Drain current: 120A Drain-source voltage: 200V Power dissipation: 714W Case: TO264 Mounting: THT Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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IXFK120N25P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 120A; 700W; TO264 Type of transistor: N-MOSFET Kind of package: tube Polarisation: unipolar Gate charge: 185nC On-state resistance: 24mΩ Drain current: 120A Drain-source voltage: 250V Power dissipation: 700W Case: TO264 Mounting: THT Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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IXFK120N30P3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 300V; 120A; 1130W; TO264 Type of transistor: N-MOSFET Kind of package: tube Polarisation: unipolar Gate charge: 150nC On-state resistance: 27mΩ Drain current: 120A Drain-source voltage: 300V Power dissipation: 1.13kW Case: TO264 Mounting: THT Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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IXTP01N100D | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 0.1A; 25W; TO220AB; 2ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 0.1A Power dissipation: 25W Case: TO220AB On-state resistance: 80Ω Mounting: THT Gate charge: 0.1µC Kind of package: tube Kind of channel: depletion Reverse recovery time: 2ns |
на замовлення 292 шт: термін постачання 14-30 дні (днів) |
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LAA110S | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS Type of relay: solid state Contacts configuration: SPST-NO x2 Control current max.: 50mA Max. operating current: 120mA Switched voltage: max. 350V AC; max. 350V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 35Ω Mounting: SMT Case: DIP8 Body dimensions: 9.65x6.35x3.3mm Insulation voltage: 3.75kV Turn-on time: 3ms Turn-off time: 3ms Kind of output: MOSFET Operating temperature: -40...85°C |
на замовлення 160 шт: термін постачання 14-30 дні (днів) |
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| LAA110STR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS Type of relay: solid state Contacts configuration: SPST-NO x2 Control current max.: 50mA Max. operating current: 120mA Switched voltage: max. 350V AC; max. 350V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 35Ω Mounting: SMT Case: DIP8 Body dimensions: 9.66x6.35x3.3mm Insulation voltage: 3.75kV Turn-on time: 3ms Turn-off time: 3ms Kind of output: MOSFET Operating temperature: -40...85°C |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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IXBH20N300 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; BiMOSFET™; 3kV; 50A; 250W; TO247-3 Mounting: THT Features of semiconductor devices: high voltage Type of transistor: IGBT Case: TO247-3 Kind of package: tube Turn-on time: 64ns Gate charge: 105nC Turn-off time: 0.3µs Gate-emitter voltage: ±20V Collector current: 50A Pulsed collector current: 130A Power dissipation: 250W Collector-emitter voltage: 3kV Technology: BiMOSFET™ |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
| IXBH20N360HV | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; 3.6kV; 70A; 430W; TO247HV Mounting: THT Type of transistor: IGBT Case: TO247HV Kind of package: tube Gate charge: 110nC Gate-emitter voltage: ±20V Collector current: 70A Pulsed collector current: 220A Power dissipation: 430W Collector-emitter voltage: 3.6kV |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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IXFK94N50P2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 94A; 1300W; TO264 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 94A Power dissipation: 1.3kW Case: TO264 On-state resistance: 55mΩ Mounting: THT Gate charge: 228nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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IXFN94N50P2 | IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 500V; 68A; SOT227B; screw; Idm: 240A Technology: HiPerFET™; Polar2™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 68A Power dissipation: 780W Case: SOT227B Gate-source voltage: ±40V On-state resistance: 55mΩ Gate charge: 0.22µC Kind of channel: enhancement Reverse recovery time: 250ns Pulsed drain current: 240A Mechanical mounting: screw Type of semiconductor module: MOSFET transistor Electrical mounting: screw Semiconductor structure: single transistor |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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IXFX94N50P2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar2™; unipolar; 500V; 94A; 1300W; PLUS247™ Type of transistor: N-MOSFET Technology: HiPerFET™; Polar2™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 94A Power dissipation: 1.3kW Case: PLUS247™ Gate-source voltage: ±30V On-state resistance: 55mΩ Mounting: THT Gate charge: 228nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 250ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
 |
DSEP12-12A | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 1.2kV; 12A; tube; Ifsm: 90A; TO220AC; 95W Type of diode: rectifying Mounting: THT Max. off-state voltage: 1.2kV Load current: 12A Reverse recovery time: 40ns Semiconductor structure: single diode Features of semiconductor devices: fast switching Case: TO220AC Max. forward voltage: 1.87V Max. forward impulse current: 90A Power dissipation: 95W Technology: HiPerFRED™ Kind of package: tube Heatsink thickness: 1.14...1.39mm |
на замовлення 334 шт: термін постачання 14-30 дні (днів) |
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DSEP12-12AZ-TUB | IXYS |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1.2kV; 12A; 40ns; TO263ABHV; Ufmax: 1.87V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1.2kV Load current: 12A Reverse recovery time: 40ns Semiconductor structure: single diode Features of semiconductor devices: fast switching Case: TO263ABHV Max. forward voltage: 1.87V Max. forward impulse current: 90A Power dissipation: 95W Technology: HiPerFRED™ Kind of package: tube |
на замовлення 73 шт: термін постачання 14-30 дні (днів) |
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| DSEP12-12AZ-TRL | IXYS |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1.2kV; 12A; 40ns; D2PAK,TO263AB; Ifsm: 90A Type of diode: rectifying Mounting: SMD Case: TO263 Technology: FRED Kind of package: reel; tape |
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В кошику од. на суму грн. |
| CMA50E1600TZ-TUB |
|
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.6kV; Ifmax: 79A; 50A; Igt: 50/80mA; TO268AA; SMD; tube
Type of thyristor: thyristor
Kind of package: tube
Gate current: 50/80mA
Load current: 50A
Case: TO268AA
Max. load current: 79A
Max. forward impulse current: 470A
Max. off-state voltage: 1.6kV
Mounting: SMD
Category: SMD/THT thyristors
Description: Thyristor; 1.6kV; Ifmax: 79A; 50A; Igt: 50/80mA; TO268AA; SMD; tube
Type of thyristor: thyristor
Kind of package: tube
Gate current: 50/80mA
Load current: 50A
Case: TO268AA
Max. load current: 79A
Max. forward impulse current: 470A
Max. off-state voltage: 1.6kV
Mounting: SMD
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| CPC2017N |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50000mA; 120mA; 16Ω
Case: SO8
On-state resistance: 16Ω
Mounting: SMT
Relay variant: 1-phase; current source
Insulation voltage: 1.5kV
Kind of output: MOSFET
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Operating temperature: -40...85°C
Turn-off time: 3ms
Turn-on time: 3ms
Body dimensions: 9.35x3.81x2.18mm
Control current max.: 50000mA
Max. operating current: 120mA
Switched voltage: max. 60V AC; max. 60V DC
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50000mA; 120mA; 16Ω
Case: SO8
On-state resistance: 16Ω
Mounting: SMT
Relay variant: 1-phase; current source
Insulation voltage: 1.5kV
Kind of output: MOSFET
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Operating temperature: -40...85°C
Turn-off time: 3ms
Turn-on time: 3ms
Body dimensions: 9.35x3.81x2.18mm
Control current max.: 50000mA
Max. operating current: 120mA
Switched voltage: max. 60V AC; max. 60V DC
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| CPC2017NTR |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; max.60VAC
Case: SO8
On-state resistance: 16Ω
Mounting: SMT
Relay variant: 1-phase; current source
Insulation voltage: 1.5kV
Kind of output: MOSFET
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Operating temperature: -40...85°C
Turn-off time: 3ms
Turn-on time: 3ms
Body dimensions: 9.35x3.81x2.18mm
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 60V AC; max. 60V DC
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; max.60VAC
Case: SO8
On-state resistance: 16Ω
Mounting: SMT
Relay variant: 1-phase; current source
Insulation voltage: 1.5kV
Kind of output: MOSFET
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Operating temperature: -40...85°C
Turn-off time: 3ms
Turn-on time: 3ms
Body dimensions: 9.35x3.81x2.18mm
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 60V AC; max. 60V DC
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| CPC2125N |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 100mA; OptoMOS
Case: SO8
On-state resistance: 35Ω
Mounting: SMT
Relay variant: 1-phase; current source
Insulation voltage: 1.5kV
Kind of output: MOSFET
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NC x2
Operating temperature: -40...85°C
Turn-off time: 2ms
Turn-on time: 2ms
Body dimensions: 9.35x3.81x2.18mm
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 400V AC; max. 400V DC
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 100mA; OptoMOS
Case: SO8
On-state resistance: 35Ω
Mounting: SMT
Relay variant: 1-phase; current source
Insulation voltage: 1.5kV
Kind of output: MOSFET
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NC x2
Operating temperature: -40...85°C
Turn-off time: 2ms
Turn-on time: 2ms
Body dimensions: 9.35x3.81x2.18mm
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 400V AC; max. 400V DC
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| CPC2125NTR |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 100mA; OptoMOS
Case: SO8
On-state resistance: 35Ω
Mounting: SMT
Relay variant: 1-phase; current source
Insulation voltage: 1.5kV
Kind of output: MOSFET
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NC x2
Operating temperature: -40...85°C
Turn-off time: 2ms
Turn-on time: 2ms
Body dimensions: 9.35x3.81x2.18mm
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 400V AC; max. 400V DC
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 100mA; OptoMOS
Case: SO8
On-state resistance: 35Ω
Mounting: SMT
Relay variant: 1-phase; current source
Insulation voltage: 1.5kV
Kind of output: MOSFET
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NC x2
Operating temperature: -40...85°C
Turn-off time: 2ms
Turn-on time: 2ms
Body dimensions: 9.35x3.81x2.18mm
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 400V AC; max. 400V DC
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| CPC2014N |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 400mA; max.60VAC
Case: SO8
On-state resistance: 2Ω
Mounting: SMT
Relay variant: 1-phase; current source
Insulation voltage: 1.5kV
Kind of output: MOSFET
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Operating temperature: -40...85°C
Turn-off time: 1ms
Turn-on time: 2ms
Body dimensions: 9.35x3.81x2.18mm
Control current max.: 50mA
Max. operating current: 0.4A
Switched voltage: max. 60V AC; max. 60V DC
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 400mA; max.60VAC
Case: SO8
On-state resistance: 2Ω
Mounting: SMT
Relay variant: 1-phase; current source
Insulation voltage: 1.5kV
Kind of output: MOSFET
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Operating temperature: -40...85°C
Turn-off time: 1ms
Turn-on time: 2ms
Body dimensions: 9.35x3.81x2.18mm
Control current max.: 50mA
Max. operating current: 0.4A
Switched voltage: max. 60V AC; max. 60V DC
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| CPC2030N |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Case: SO8
On-state resistance: 30Ω
Mounting: SMT
Relay variant: 1-phase; current source
Insulation voltage: 1.5kV
Kind of output: MOSFET
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Operating temperature: -40...85°C
Turn-off time: 1ms
Turn-on time: 2ms
Body dimensions: 9.35x3.81x2.18mm
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Case: SO8
On-state resistance: 30Ω
Mounting: SMT
Relay variant: 1-phase; current source
Insulation voltage: 1.5kV
Kind of output: MOSFET
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Operating temperature: -40...85°C
Turn-off time: 1ms
Turn-on time: 2ms
Body dimensions: 9.35x3.81x2.18mm
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
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| CPC2025NTR |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Case: SO8
On-state resistance: 30Ω
Mounting: SMT
Relay variant: 1-phase; current source
Insulation voltage: 1.5kV
Kind of output: MOSFET
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Operating temperature: -40...85°C
Turn-off time: 1ms
Turn-on time: 2ms
Body dimensions: 9.35x3.81x2.18mm
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 400V AC; max. 400V DC
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Case: SO8
On-state resistance: 30Ω
Mounting: SMT
Relay variant: 1-phase; current source
Insulation voltage: 1.5kV
Kind of output: MOSFET
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Operating temperature: -40...85°C
Turn-off time: 1ms
Turn-on time: 2ms
Body dimensions: 9.35x3.81x2.18mm
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 400V AC; max. 400V DC
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| CPC2014NTR |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 400mA; max.60VAC
Case: SO8
On-state resistance: 2Ω
Mounting: SMT
Relay variant: 1-phase; current source
Insulation voltage: 1.5kV
Kind of output: MOSFET
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Operating temperature: -40...85°C
Turn-off time: 1ms
Turn-on time: 2ms
Body dimensions: 9.35x3.81x2.18mm
Control current max.: 50mA
Max. operating current: 0.4A
Switched voltage: max. 60V AC; max. 60V DC
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 400mA; max.60VAC
Case: SO8
On-state resistance: 2Ω
Mounting: SMT
Relay variant: 1-phase; current source
Insulation voltage: 1.5kV
Kind of output: MOSFET
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Operating temperature: -40...85°C
Turn-off time: 1ms
Turn-on time: 2ms
Body dimensions: 9.35x3.81x2.18mm
Control current max.: 50mA
Max. operating current: 0.4A
Switched voltage: max. 60V AC; max. 60V DC
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В кошику
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| CPC2030NTR |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Case: SO8
On-state resistance: 30Ω
Mounting: SMT
Relay variant: 1-phase; current source
Insulation voltage: 1.5kV
Kind of output: MOSFET
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Operating temperature: -40...85°C
Turn-off time: 1ms
Turn-on time: 2ms
Body dimensions: 9.35x3.81x2.18mm
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Case: SO8
On-state resistance: 30Ω
Mounting: SMT
Relay variant: 1-phase; current source
Insulation voltage: 1.5kV
Kind of output: MOSFET
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Operating temperature: -40...85°C
Turn-off time: 1ms
Turn-on time: 2ms
Body dimensions: 9.35x3.81x2.18mm
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
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| VHFD37-16IO1 |
|
Виробник: IXYS
Category: Single phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.6kV; If: 40A; screw
Electrical mounting: FASTON connectors
Features of semiconductor devices: field diodes; freewheelling diode
Mechanical mounting: screw
Type of bridge rectifier: half-controlled
Version: module
Case: V1-A-Pack
Leads dimensions: 2x0.5mm
Gate current: 50/80mA
Load current: 40A
Max. forward impulse current: 280A
Max. off-state voltage: 1.6kV
Leads: connectors
Category: Single phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.6kV; If: 40A; screw
Electrical mounting: FASTON connectors
Features of semiconductor devices: field diodes; freewheelling diode
Mechanical mounting: screw
Type of bridge rectifier: half-controlled
Version: module
Case: V1-A-Pack
Leads dimensions: 2x0.5mm
Gate current: 50/80mA
Load current: 40A
Max. forward impulse current: 280A
Max. off-state voltage: 1.6kV
Leads: connectors
на замовлення 15 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 2645.14 грн |
| 10+ | 2280.75 грн |
| LF21064NTR |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO14; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -600...290mA
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 10...20V
Topology: IGBT half-bridge; MOSFET half-bridge
Voltage class: 600V
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO14; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -600...290mA
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 10...20V
Topology: IGBT half-bridge; MOSFET half-bridge
Voltage class: 600V
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| LF2106NTR |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -600÷290mA
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 10...20V
Topology: IGBT half-bridge; MOSFET half-bridge
Voltage class: 600V
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -600÷290mA
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 10...20V
Topology: IGBT half-bridge; MOSFET half-bridge
Voltage class: 600V
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| IXFN32N120P |
|
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 32A; SOT227B; screw; Idm: 100A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.2kV
Drain current: 32A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.31Ω
Pulsed drain current: 100A
Power dissipation: 1kW
Technology: HiPerFET™; Polar™
Kind of channel: enhancement
Gate charge: 360nC
Reverse recovery time: 300ns
Gate-source voltage: ±40V
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 32A; SOT227B; screw; Idm: 100A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.2kV
Drain current: 32A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.31Ω
Pulsed drain current: 100A
Power dissipation: 1kW
Technology: HiPerFET™; Polar™
Kind of channel: enhancement
Gate charge: 360nC
Reverse recovery time: 300ns
Gate-source voltage: ±40V
Mechanical mounting: screw
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| PM1206S |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.600VAC; 1-phase
Operating temperature: -40...85°C
Mounting: SMT
Type of relay: solid state
Switching method: zero voltage switching
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 100mA
Max. operating current: 0.5A
Switched voltage: max. 600V AC
Insulation voltage: 3.75kV
Relay variant: 1-phase
Case: DIP6
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.600VAC; 1-phase
Operating temperature: -40...85°C
Mounting: SMT
Type of relay: solid state
Switching method: zero voltage switching
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 100mA
Max. operating current: 0.5A
Switched voltage: max. 600V AC
Insulation voltage: 3.75kV
Relay variant: 1-phase
Case: DIP6
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| PM1206STR |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.600VAC; 1-phase
Operating temperature: -40...85°C
Mounting: SMT
Type of relay: solid state
Switching method: zero voltage switching
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 100mA
Max. operating current: 0.5A
Switched voltage: max. 600V AC
Insulation voltage: 3.75kV
Relay variant: 1-phase
Case: DIP6
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.600VAC; 1-phase
Operating temperature: -40...85°C
Mounting: SMT
Type of relay: solid state
Switching method: zero voltage switching
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 100mA
Max. operating current: 0.5A
Switched voltage: max. 600V AC
Insulation voltage: 3.75kV
Relay variant: 1-phase
Case: DIP6
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| MG12100S-BN2MM |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Electrical mounting: FASTON connectors; screw
Technology: Field Stop; Trench
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Case: package S
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 200A
Max. off-state voltage: 1.2kV
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Electrical mounting: FASTON connectors; screw
Technology: Field Stop; Trench
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Case: package S
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 200A
Max. off-state voltage: 1.2kV
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| MG12150W-XN2MM |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Electrical mounting: Press-in PCB
Technology: Field Stop; Trench
Type of semiconductor module: IGBT
Topology: IGBT three-phase bridge; NTC thermistor
Case: package W
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 300A
Max. off-state voltage: 1.2kV
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Electrical mounting: Press-in PCB
Technology: Field Stop; Trench
Type of semiconductor module: IGBT
Topology: IGBT three-phase bridge; NTC thermistor
Case: package W
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 300A
Max. off-state voltage: 1.2kV
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| MG12200D-BN2MM |
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Electrical mounting: FASTON connectors; screw
Technology: Field Stop; Trench
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Case: Y3-DCB
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Max. off-state voltage: 1.2kV
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Electrical mounting: FASTON connectors; screw
Technology: Field Stop; Trench
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Case: Y3-DCB
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Max. off-state voltage: 1.2kV
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| MG12300D-BN2MM |
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Electrical mounting: FASTON connectors; screw
Technology: Field Stop; Trench
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Case: Y3-DCB
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Max. off-state voltage: 1.2kV
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Electrical mounting: FASTON connectors; screw
Technology: Field Stop; Trench
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Case: Y3-DCB
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Max. off-state voltage: 1.2kV
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| DSEC240-04A | |
|
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double,common cathode; 400V; If: 120Ax2; SOT227UI
Type of semiconductor module: diode
Semiconductor structure: common cathode; double
Max. off-state voltage: 0.4kV
Load current: 120A x2
Case: SOT227UI
Max. forward voltage: 1V
Max. forward impulse current: 2kA
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: tube
Category: Diode modules
Description: Module: diode; double,common cathode; 400V; If: 120Ax2; SOT227UI
Type of semiconductor module: diode
Semiconductor structure: common cathode; double
Max. off-state voltage: 0.4kV
Load current: 120A x2
Case: SOT227UI
Max. forward voltage: 1V
Max. forward impulse current: 2kA
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: tube
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| LOC112S |
|
Виробник: IXYS
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; 3.75kV; 1A
Type of optocoupler: optocoupler
Insulation voltage: 3.75kV
Trigger current: 1A
Mounting: SMD
Number of channels: 1
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; 3.75kV; 1A
Type of optocoupler: optocoupler
Insulation voltage: 3.75kV
Trigger current: 1A
Mounting: SMD
Number of channels: 1
на замовлення 98 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 211.43 грн |
| 5+ | 177.95 грн |
| 10+ | 162.91 грн |
| 25+ | 139.52 грн |
| 50+ | 123.65 грн |
| DSA320A100NB |
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double x2,common anode; 100V; 80Ax4; SOT227B; screw
Electrical mounting: screw
Mechanical mounting: screw
Type of semiconductor module: diode
Features of semiconductor devices: Schottky
Kind of package: tube
Case: SOT227B
Max. forward voltage: 0.77V
Load current: 80A x4
Max. off-state voltage: 100V
Semiconductor structure: common anode; double x2
Category: Diode modules
Description: Module: diode; double x2,common anode; 100V; 80Ax4; SOT227B; screw
Electrical mounting: screw
Mechanical mounting: screw
Type of semiconductor module: diode
Features of semiconductor devices: Schottky
Kind of package: tube
Case: SOT227B
Max. forward voltage: 0.77V
Load current: 80A x4
Max. off-state voltage: 100V
Semiconductor structure: common anode; double x2
на замовлення 3 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 2143.10 грн |
| 3+ | 1759.44 грн |
| IXXH30N65B4 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 30A; 230W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Power dissipation: 230W
Case: TO247-3
Mounting: THT
Gate charge: 52nC
Kind of package: tube
Collector-emitter voltage: 650V
Turn-on time: 65ns
Turn-off time: 206ns
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 146A
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 30A; 230W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Power dissipation: 230W
Case: TO247-3
Mounting: THT
Gate charge: 52nC
Kind of package: tube
Collector-emitter voltage: 650V
Turn-on time: 65ns
Turn-off time: 206ns
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 146A
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| IXYT30N65C3H1HV |
|
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 30A; 270W; TO268HV
Type of transistor: IGBT
Technology: GenX3™; Planar; Sonic FRD™; XPT™
Power dissipation: 270W
Case: TO268HV
Mounting: SMD
Gate charge: 44nC
Kind of package: tube
Collector-emitter voltage: 650V
Turn-on time: 59ns
Turn-off time: 0.12µs
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 118A
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 30A; 270W; TO268HV
Type of transistor: IGBT
Technology: GenX3™; Planar; Sonic FRD™; XPT™
Power dissipation: 270W
Case: TO268HV
Mounting: SMD
Gate charge: 44nC
Kind of package: tube
Collector-emitter voltage: 650V
Turn-on time: 59ns
Turn-off time: 0.12µs
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 118A
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| IXXA30N65C3HV |
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 52A; 230W; D2PAK
Type of transistor: IGBT
Power dissipation: 230W
Case: D2PAK
Mounting: SMD
Gate charge: 37nC
Kind of package: tube
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Collector current: 52A
Pulsed collector current: 113A
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 52A; 230W; D2PAK
Type of transistor: IGBT
Power dissipation: 230W
Case: D2PAK
Mounting: SMD
Gate charge: 37nC
Kind of package: tube
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Collector current: 52A
Pulsed collector current: 113A
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| IXXH30N65B4D1 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 30A; 230W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Power dissipation: 230W
Case: TO247-3
Mounting: THT
Gate charge: 52nC
Kind of package: tube
Collector-emitter voltage: 650V
Turn-on time: 65ns
Turn-off time: 206ns
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 146A
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 30A; 230W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Power dissipation: 230W
Case: TO247-3
Mounting: THT
Gate charge: 52nC
Kind of package: tube
Collector-emitter voltage: 650V
Turn-on time: 65ns
Turn-off time: 206ns
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 146A
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| IXXH30N65C4D1 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 30A; 230W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Power dissipation: 230W
Case: TO247-3
Mounting: THT
Gate charge: 47nC
Kind of package: tube
Collector-emitter voltage: 650V
Turn-on time: 65ns
Turn-off time: 161ns
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 136A
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 30A; 230W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Power dissipation: 230W
Case: TO247-3
Mounting: THT
Gate charge: 47nC
Kind of package: tube
Collector-emitter voltage: 650V
Turn-on time: 65ns
Turn-off time: 161ns
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 136A
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| IXYH30N65C3H1 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 30A; 270W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; Sonic FRD™; XPT™
Power dissipation: 270W
Case: TO247-3
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Collector-emitter voltage: 650V
Turn-on time: 59ns
Turn-off time: 0.12µs
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 118A
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 30A; 270W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; Sonic FRD™; XPT™
Power dissipation: 270W
Case: TO247-3
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Collector-emitter voltage: 650V
Turn-on time: 59ns
Turn-off time: 0.12µs
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 118A
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| IXYP30N65C3 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 30A; 270W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 270W
Case: TO220-3
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Collector-emitter voltage: 650V
Turn-on time: 59ns
Turn-off time: 0.12µs
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 118A
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 30A; 270W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 270W
Case: TO220-3
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Collector-emitter voltage: 650V
Turn-on time: 59ns
Turn-off time: 0.12µs
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 118A
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| IXFR102N30P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 60A; 250W; ISOPLUS247™
Mounting: THT
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 224nC
On-state resistance: 36mΩ
Drain current: 60A
Power dissipation: 250W
Drain-source voltage: 300V
Kind of package: tube
Case: ISOPLUS247™
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 60A; 250W; ISOPLUS247™
Mounting: THT
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 224nC
On-state resistance: 36mΩ
Drain current: 60A
Power dissipation: 250W
Drain-source voltage: 300V
Kind of package: tube
Case: ISOPLUS247™
Kind of channel: enhancement
на замовлення 4 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1235.30 грн |
| 3+ | 1021.74 грн |
| DSEI30-06A | |
|
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 37A; tube; Ifsm: 300A; TO247-2; 125W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 37A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 0.3kA
Case: TO247-2
Max. forward voltage: 1.4V
Power dissipation: 125W
Reverse recovery time: 35ns
Technology: FRED
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 37A; tube; Ifsm: 300A; TO247-2; 125W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 37A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 0.3kA
Case: TO247-2
Max. forward voltage: 1.4V
Power dissipation: 125W
Reverse recovery time: 35ns
Technology: FRED
на замовлення 275 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 257.32 грн |
| 3+ | 223.06 грн |
| IXFK120N20P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 120A; 714W; TO264; 100ns
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Reverse recovery time: 100ns
Gate charge: 152nC
On-state resistance: 22mΩ
Drain current: 120A
Drain-source voltage: 200V
Power dissipation: 714W
Case: TO264
Mounting: THT
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 120A; 714W; TO264; 100ns
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Reverse recovery time: 100ns
Gate charge: 152nC
On-state resistance: 22mΩ
Drain current: 120A
Drain-source voltage: 200V
Power dissipation: 714W
Case: TO264
Mounting: THT
Kind of channel: enhancement
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| IXFK120N25P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 120A; 700W; TO264
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Gate charge: 185nC
On-state resistance: 24mΩ
Drain current: 120A
Drain-source voltage: 250V
Power dissipation: 700W
Case: TO264
Mounting: THT
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 120A; 700W; TO264
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Gate charge: 185nC
On-state resistance: 24mΩ
Drain current: 120A
Drain-source voltage: 250V
Power dissipation: 700W
Case: TO264
Mounting: THT
Kind of channel: enhancement
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| IXFK120N30P3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 120A; 1130W; TO264
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Gate charge: 150nC
On-state resistance: 27mΩ
Drain current: 120A
Drain-source voltage: 300V
Power dissipation: 1.13kW
Case: TO264
Mounting: THT
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 120A; 1130W; TO264
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Gate charge: 150nC
On-state resistance: 27mΩ
Drain current: 120A
Drain-source voltage: 300V
Power dissipation: 1.13kW
Case: TO264
Mounting: THT
Kind of channel: enhancement
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| IXTP01N100D |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.1A; 25W; TO220AB; 2ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 0.1A
Power dissipation: 25W
Case: TO220AB
On-state resistance: 80Ω
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 2ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.1A; 25W; TO220AB; 2ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 0.1A
Power dissipation: 25W
Case: TO220AB
On-state resistance: 80Ω
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 2ns
на замовлення 292 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 534.43 грн |
| 10+ | 427.75 грн |
| 25+ | 352.56 грн |
| 50+ | 329.16 грн |
| LAA110S |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
на замовлення 160 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 397.67 грн |
| 50+ | 311.62 грн |
| 100+ | 295.75 грн |
| LAA110STR |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
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| IXBH20N300 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 3kV; 50A; 250W; TO247-3
Mounting: THT
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Case: TO247-3
Kind of package: tube
Turn-on time: 64ns
Gate charge: 105nC
Turn-off time: 0.3µs
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 130A
Power dissipation: 250W
Collector-emitter voltage: 3kV
Technology: BiMOSFET™
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 3kV; 50A; 250W; TO247-3
Mounting: THT
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Case: TO247-3
Kind of package: tube
Turn-on time: 64ns
Gate charge: 105nC
Turn-off time: 0.3µs
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 130A
Power dissipation: 250W
Collector-emitter voltage: 3kV
Technology: BiMOSFET™
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| IXBH20N360HV |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 3.6kV; 70A; 430W; TO247HV
Mounting: THT
Type of transistor: IGBT
Case: TO247HV
Kind of package: tube
Gate charge: 110nC
Gate-emitter voltage: ±20V
Collector current: 70A
Pulsed collector current: 220A
Power dissipation: 430W
Collector-emitter voltage: 3.6kV
Category: THT IGBT transistors
Description: Transistor: IGBT; 3.6kV; 70A; 430W; TO247HV
Mounting: THT
Type of transistor: IGBT
Case: TO247HV
Kind of package: tube
Gate charge: 110nC
Gate-emitter voltage: ±20V
Collector current: 70A
Pulsed collector current: 220A
Power dissipation: 430W
Collector-emitter voltage: 3.6kV
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| IXFK94N50P2 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 94A; 1300W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 94A
Power dissipation: 1.3kW
Case: TO264
On-state resistance: 55mΩ
Mounting: THT
Gate charge: 228nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 94A; 1300W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 94A
Power dissipation: 1.3kW
Case: TO264
On-state resistance: 55mΩ
Mounting: THT
Gate charge: 228nC
Kind of package: tube
Kind of channel: enhancement
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| IXFN94N50P2 |
|
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 68A; SOT227B; screw; Idm: 240A
Technology: HiPerFET™; Polar2™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 68A
Power dissipation: 780W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 55mΩ
Gate charge: 0.22µC
Kind of channel: enhancement
Reverse recovery time: 250ns
Pulsed drain current: 240A
Mechanical mounting: screw
Type of semiconductor module: MOSFET transistor
Electrical mounting: screw
Semiconductor structure: single transistor
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 68A; SOT227B; screw; Idm: 240A
Technology: HiPerFET™; Polar2™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 68A
Power dissipation: 780W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 55mΩ
Gate charge: 0.22µC
Kind of channel: enhancement
Reverse recovery time: 250ns
Pulsed drain current: 240A
Mechanical mounting: screw
Type of semiconductor module: MOSFET transistor
Electrical mounting: screw
Semiconductor structure: single transistor
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| IXFX94N50P2 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar2™; unipolar; 500V; 94A; 1300W; PLUS247™
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar2™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 94A
Power dissipation: 1.3kW
Case: PLUS247™
Gate-source voltage: ±30V
On-state resistance: 55mΩ
Mounting: THT
Gate charge: 228nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar2™; unipolar; 500V; 94A; 1300W; PLUS247™
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar2™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 94A
Power dissipation: 1.3kW
Case: PLUS247™
Gate-source voltage: ±30V
On-state resistance: 55mΩ
Mounting: THT
Gate charge: 228nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
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| DSEP12-12A |
|
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 12A; tube; Ifsm: 90A; TO220AC; 95W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 12A
Reverse recovery time: 40ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: TO220AC
Max. forward voltage: 1.87V
Max. forward impulse current: 90A
Power dissipation: 95W
Technology: HiPerFRED™
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 12A; tube; Ifsm: 90A; TO220AC; 95W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 12A
Reverse recovery time: 40ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: TO220AC
Max. forward voltage: 1.87V
Max. forward impulse current: 90A
Power dissipation: 95W
Technology: HiPerFRED™
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
на замовлення 334 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 229.42 грн |
| 10+ | 170.43 грн |
| 50+ | 112.78 грн |
| DSEP12-12AZ-TUB |
|
Виробник: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 12A; 40ns; TO263ABHV; Ufmax: 1.87V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 12A
Reverse recovery time: 40ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: TO263ABHV
Max. forward voltage: 1.87V
Max. forward impulse current: 90A
Power dissipation: 95W
Technology: HiPerFRED™
Kind of package: tube
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 12A; 40ns; TO263ABHV; Ufmax: 1.87V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 12A
Reverse recovery time: 40ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: TO263ABHV
Max. forward voltage: 1.87V
Max. forward impulse current: 90A
Power dissipation: 95W
Technology: HiPerFRED™
Kind of package: tube
на замовлення 73 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 171.27 грн |
| 10+ | 152.05 грн |
| 50+ | 138.68 грн |
| DSEP12-12AZ-TRL |
|
Виробник: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 12A; 40ns; D2PAK,TO263AB; Ifsm: 90A
Type of diode: rectifying
Mounting: SMD
Case: TO263
Technology: FRED
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 12A; 40ns; D2PAK,TO263AB; Ifsm: 90A
Type of diode: rectifying
Mounting: SMD
Case: TO263
Technology: FRED
Kind of package: reel; tape
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