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LBB126PTR IXYS LBB126.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 170mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NC x2
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 15Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.66x6.35x2.16mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
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LBB126STR IXYS LBB126.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 170mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NC x2
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 15Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
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IXDI614SITR IXYS littelfuse-integrated-circuits-ixd-614-datasheet?assetguid=e66ef830-2f72-45bc-86ab-607383f42514 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SOIC8; 14A; Ch: 1; MOSFET
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SOIC8
Output current: 14A
Number of channels: 1
Integrated circuit features: MOSFET
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 25ns
Pulse fall time: 18ns
Application: automotive industry
Maximum output current: 14A
Supply voltage: 4.5...35V
Kind of output: N-Channel
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IX4310TTR IX4310TTR IXYS littelfuse-integrated-circuits-ix4310t-datasheet?assetguid=f6c6e9cc-7c3e-472d-bad7-d563f01f2fa2 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SOT23-5; -2÷2A; Ch: 2; 5÷24V
Mounting: SMD
Operating temperature: -40...125°C
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Kind of output: non-inverting
Kind of package: reel; tape
Output current: -2...2A
Number of channels: 2
Supply voltage: 5...24V
Case: SOT23-5
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IXBOD1-25R IXYS IXBOD1_v2.pdf Category: Thyristors - others
Description: Thyristor: BOD x3; 0.9A; BOD; THT; 2.5kV; bulk
Type of thyristor: BOD x3
Max. load current: 0.9A
Case: BOD
Mounting: THT
Breakover voltage: 2.5kV
Kind of package: bulk
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IXBOD1-25RD IXYS IXBOD1_v2.pdf Category: Thyristors - others
Description: Thyristor: BOD x3; 0.2A; BOD; THT; 2.5kV; bulk
Type of thyristor: BOD x3
Max. load current: 0.2A
Case: BOD
Mounting: THT
Breakover voltage: 2.5kV
Features of semiconductor devices: version RD (internal diode)
Kind of package: bulk
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IXTP6N100D2 IXTP6N100D2 IXYS IXTA(H,P)6N100D2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 6A; 300W; TO220AB; 41ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 6A
Power dissipation: 300W
Case: TO220AB
On-state resistance: 2.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 41ns
на замовлення 350 шт:
термін постачання 14-30 дні (днів)
1+662.75 грн
5+501.13 грн
10+446.11 грн
В кошику  од. на суму  грн.
IXFR26N100P IXFR26N100P IXYS IXFR26N100P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 15A; 290W; ISOPLUS247™
Mounting: THT
Case: ISOPLUS247™
Kind of package: tube
Kind of channel: enhancement
Type of transistor: N-MOSFET
Gate charge: 197nC
On-state resistance: 0.43Ω
Drain current: 15A
Power dissipation: 290W
Drain-source voltage: 1kV
Polarisation: unipolar
на замовлення 6 шт:
термін постачання 14-30 дні (днів)
1+3289.15 грн
3+2748.62 грн
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IXTP1R6N100D2 IXTP1R6N100D2 IXYS IXTA(P,Y)1R6N100D2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 1.6A; 100W; TO220AB; 11ns
Mounting: THT
Reverse recovery time: 11ns
Gate charge: 645nC
Drain current: 1.6A
On-state resistance: 10Ω
Gate-source voltage: ±20V
Power dissipation: 100W
Drain-source voltage: 1kV
Kind of channel: depletion
Type of transistor: N-MOSFET
Case: TO220AB
Kind of package: tube
Polarisation: unipolar
на замовлення 280 шт:
термін постачання 14-30 дні (днів)
2+280.78 грн
10+228.56 грн
50+166.76 грн
100+148.14 грн
Мінімальне замовлення: 2
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IXTA6N100D2 IXTA6N100D2 IXYS IXTA(H,P)6N100D2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 6A; 300W; TO263; 41ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 6A
Power dissipation: 300W
Case: TO263
On-state resistance: 2.2Ω
Mounting: SMD
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 41ns
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IXTH6N100D2 IXTH6N100D2 IXYS IXTA(H,P)6N100D2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 6A; 300W; TO247-3; 41ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 6A
Power dissipation: 300W
Case: TO247-3
On-state resistance: 2.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 41ns
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IXFN36N100 IXFN36N100 IXYS IXFN36N100.pdf description Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 36A; SOT227B; screw; Idm: 144A; 694W
Technology: HiPerFET™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 36A
Pulsed drain current: 144A
Power dissipation: 694W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 0.24Ω
Kind of channel: enhancement
Electrical mounting: screw
Semiconductor structure: single transistor
Type of semiconductor module: MOSFET transistor
Reverse recovery time: 180ns
Gate charge: 380nC
Mechanical mounting: screw
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IXFK26N100P IXFK26N100P IXYS IXFK26N100P_IXFX26N100P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 26A; 780W; TO264; 300ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 26A
Power dissipation: 780W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 390mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 300ns
Gate charge: 197nC
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IXFX26N100P IXFX26N100P IXYS IXFK26N100P_IXFX26N100P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 26A; 780W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 26A
Power dissipation: 780W
Case: PLUS247™
On-state resistance: 390mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 197nC
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IXTY1R6N100D2 IXTY1R6N100D2 IXYS IXTA(P,Y)1R6N100D2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 1.6A; 100W; TO252; 11ns
Mounting: SMD
Reverse recovery time: 11ns
Gate charge: 645nC
Drain current: 1.6A
On-state resistance: 10Ω
Gate-source voltage: ±20V
Power dissipation: 100W
Drain-source voltage: 1kV
Kind of channel: depletion
Type of transistor: N-MOSFET
Case: TO252
Kind of package: tube
Polarisation: unipolar
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IXTA1R6N100D2 IXTA1R6N100D2 IXYS IXTA(P,Y)1R6N100D2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 1.6A; 100W; TO263; 11ns
Mounting: SMD
Reverse recovery time: 11ns
Gate charge: 645nC
Drain current: 1.6A
On-state resistance: 10Ω
Gate-source voltage: ±20V
Power dissipation: 100W
Drain-source voltage: 1kV
Kind of channel: depletion
Type of transistor: N-MOSFET
Case: TO263
Kind of package: tube
Polarisation: unipolar
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IXTA1R6N100D2HV IXTA1R6N100D2HV IXYS IXTA1R6N100D2HV.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 1.6A; 100W; TO263
Mounting: SMD
Reverse recovery time: 970ns
Gate charge: 27nC
Drain current: 1.6A
On-state resistance: 10Ω
Gate-source voltage: ±20V
Power dissipation: 100W
Drain-source voltage: 1kV
Kind of channel: depletion
Type of transistor: N-MOSFET
Technology: Polar™
Case: TO263
Kind of package: tube
Polarisation: unipolar
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CPC1117NTR CPC1117NTR IXYS CPC1117N.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 150mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 150mA
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 16Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 10ms
Turn-off time: 10ms
Kind of output: MOSFET
Operating temperature: -40...85°C
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CPC1125N CPC1125N IXYS CPC1125N.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 100mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 2ms
Operating temperature: -40...85°C
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CPC1125NTR CPC1125NTR IXYS CPC1125N.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 100mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 2ms
Operating temperature: -40...85°C
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MDI550-12A4 IXYS Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Y3-DCB
Case: Y3-DCB
Semiconductor structure: diode/transistor
Mechanical mounting: screw
Type of semiconductor module: IGBT
Technology: NPT
Gate-emitter voltage: ±20V
Max. off-state voltage: 1.2kV
Collector current: 460A
Pulsed collector current: 800A
Power dissipation: 2.75kW
Topology: buck chopper
Application: motors
Electrical mounting: FASTON connectors; screw
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MID550-12A4 IXYS Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; NPT
Case: Y3-DCB
Semiconductor structure: diode/transistor
Mechanical mounting: screw
Type of semiconductor module: IGBT
Technology: NPT
Gate-emitter voltage: ±20V
Max. off-state voltage: 1.2kV
Collector current: 460A
Pulsed collector current: 800A
Power dissipation: 2.75kW
Topology: boost chopper
Application: motors
Electrical mounting: FASTON connectors; screw
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IXFN80N50 IXFN80N50 IXYS IXFN80N50.pdf description Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 80A; SOT227B; screw; Idm: 320A
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 80A
Pulsed drain current: 320A
Power dissipation: 694W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 55mΩ
Gate charge: 380nC
Kind of channel: enhancement
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of semiconductor module: MOSFET transistor
Technology: HiPerFET™
Reverse recovery time: 250ns
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CPC1014NTR CPC1014NTR IXYS CPC1014N.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 400mA; max.60VAC
Operating temperature: -40...85°C
Case: SOP4
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NO
Kind of output: MOSFET
Turn-on time: 2ms
Turn-off time: 1ms
Body dimensions: 4.09x3.81x2.03mm
Control current max.: 50mA
Max. operating current: 0.4A
Manufacturer series: OptoMOS
On-state resistance: 2Ω
Relay variant: 1-phase; current source
Switched voltage: max. 60V AC; max. 60V DC
Insulation voltage: 1.5kV
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IXTY44N10T IXTY44N10T IXYS IXTP(Y)44N10T.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 44A; 130W; TO252; 60ns
Case: TO252
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Type of transistor: N-MOSFET
Features of semiconductor devices: thrench gate power mosfet
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 44A
Reverse recovery time: 60ns
On-state resistance: 30mΩ
Power dissipation: 130W
на замовлення 425 шт:
термін постачання 14-30 дні (днів)
3+213.32 грн
10+171.00 грн
25+138.83 грн
50+106.66 грн
70+96.50 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IXTY1R6N50D2 IXTY1R6N50D2 IXYS IXTA(P,Y)1R6N50D2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 1.6A; 100W; TO252; 400ns
Type of transistor: N-MOSFET
Power dissipation: 100W
Case: TO252
Mounting: SMD
Gate charge: 23.7nC
Kind of package: tube
Kind of channel: depletion
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 1.6A
Gate-source voltage: ±20V
Reverse recovery time: 400ns
On-state resistance: 2.3Ω
на замовлення 331 шт:
термін постачання 14-30 дні (днів)
2+285.34 грн
10+203.16 грн
25+170.15 грн
30+163.38 грн
50+154.07 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
MCC312-12io1 MCC312-12io1 IXYS MCC312-12IO1.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 320Ax2; Ifmax: 520A; Y1-CU
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 320A x2
Max. load current: 520A
Case: Y1-CU
Max. forward voltage: 1.32V
Max. forward impulse current: 8kA
Gate current: 150/220mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
на замовлення 3 шт:
термін постачання 14-30 дні (днів)
1+13154.79 грн
В кошику  од. на суму  грн.
IXDN604SIA IXDN604SIA IXYS IXDD604PI.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -4...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
на замовлення 528 шт:
термін постачання 14-30 дні (днів)
4+126.72 грн
10+87.19 грн
25+80.42 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IXDN604SIATR IXDN604SIATR IXYS littelfuse-integrated-circuits-ixd-604si-sia-datasheet?assetguid=9f38a290-f482-4588-95a1-b6b544380200 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -4...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
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IXTU4N70X2 IXTU4N70X2 IXYS ixty2n65x2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 4A; Idm: 8A; 80W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 4A
Pulsed drain current: 8A
Power dissipation: 80W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 11.8nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 68 шт:
термін постачання 14-30 дні (днів)
3+169.56 грн
5+142.21 грн
25+125.28 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IXTA4N70X2 IXTA4N70X2 IXYS ixty2n65x2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 4A; Idm: 8A; 80W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 4A
Pulsed drain current: 8A
Power dissipation: 80W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 11.8nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 38 шт:
термін постачання 14-30 дні (днів)
3+154.07 грн
10+135.44 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IXTP4N70X2M IXTP4N70X2M IXYS IXTP4N70X2M.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 4A; 30W; TO220FP; 186ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 4A
Power dissipation: 30W
Case: TO220FP
On-state resistance: 0.85Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 186ns
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IXTY18P10T IXTY18P10T IXYS IXT_18P10T.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -18A; 83W; TO252
Type of transistor: P-MOSFET
Technology: TrenchP™
Power dissipation: 83W
Case: TO252
Mounting: SMD
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhancement
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -18A
Gate-source voltage: ±15V
Reverse recovery time: 62ns
On-state resistance: 0.12Ω
на замовлення 344 шт:
термін постачання 14-30 дні (днів)
2+319.98 грн
10+168.46 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXTY15P15T-TRL IXYS Category: SMD P channel transistors
Description: Transistor: P-MOSFET; 150V; 15A; 150W; DPAK
Type of transistor: P-MOSFET
Power dissipation: 150W
Case: DPAK
Mounting: SMD
Kind of channel: enhancement
Drain-source voltage: 150V
Drain current: 15A
Gate-source voltage: -15...15V
On-state resistance: 0.24Ω
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IXTY18P10T-TRL IXYS Category: SMD P channel transistors
Description: Transistor: P-MOSFET; 100V; 18A; 83W; DPAK,TO252AA
Type of transistor: P-MOSFET
Power dissipation: 83W
Case: DPAK; TO252AA
Mounting: SMD
Kind of channel: enhancement
Drain-source voltage: 100V
Drain current: 18A
Gate-source voltage: 15V
On-state resistance: 0.12Ω
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IXTY10P15T IXTY10P15T IXYS IXT_10P15T.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -150V; -10A; 83W; TO252
Type of transistor: P-MOSFET
Technology: TrenchP™
Power dissipation: 83W
Case: TO252
Mounting: SMD
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -10A
Gate-source voltage: ±15V
Reverse recovery time: 120ns
On-state resistance: 0.35Ω
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IXTY15P15T IXTY15P15T IXYS IXT_15P15T.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -150V; -15A; 150W; TO252
Type of transistor: P-MOSFET
Technology: TrenchP™
Power dissipation: 150W
Case: TO252
Mounting: SMD
Gate charge: 48nC
Kind of package: tube
Kind of channel: enhancement
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -15A
Gate-source voltage: ±15V
Reverse recovery time: 116ns
On-state resistance: 0.24Ω
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IXTY1N80P IXTY1N80P IXYS IXTA(P,U,Y)1N80P.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1A; 42W; TO252; 700ns
Type of transistor: N-MOSFET
Power dissipation: 42W
Case: TO252
Mounting: SMD
Gate charge: 9nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1A
Reverse recovery time: 700ns
On-state resistance: 14Ω
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IXTY1N100P IXTY1N100P IXYS IXTA(P,Y)1N100P.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 1A; 50W; TO252; 750ns
Type of transistor: N-MOSFET
Power dissipation: 50W
Case: TO252
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 1A
Reverse recovery time: 750ns
On-state resistance: 15Ω
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MMIX1Y100N120C3H1 IXYS MMIX1Y100N120C3H1.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.2kV; 40A; 400W; SMPD
Type of transistor: IGBT
Technology: BiMOSFET™; GenX3™; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 400W
Case: SMPD
Gate-emitter voltage: ±20V
Pulsed collector current: 440A
Mounting: SMD
Gate charge: 0.27µC
Kind of package: tube
Turn-on time: 122ns
Turn-off time: 265ns
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CMA80PD1600NA CMA80PD1600NA IXYS CMA80PD1600NA.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 80A; SOT227B; Ufmax: 1.29V; screw
Mechanical mounting: screw
Load current: 80A
Gate current: 100/200mA
Max. load current: 126A
Threshold on-voltage: 0.86V
Max. forward voltage: 1.29V
Max. forward impulse current: 1.07kA
Max. off-state voltage: 1.6kV
Kind of package: bulk
Case: SOT227B
Semiconductor structure: double series
Type of semiconductor module: diode-thyristor
Electrical mounting: screw
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MCC72-08io1B IXYS PCN210915_TO240 screw.pdf PCN210930_TO240 screw.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 800V; 116A; TO240AA; Ufmax: 1.82V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 0.8kV
Load current: 116A
Case: TO240AA
Max. forward voltage: 1.82V
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
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MCC72-08io8B IXYS PCN210915_TO240 screw.pdf PCN210930_TO240 screw.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 800V; 116A; TO240AA; Ufmax: 1.82V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 0.8kV
Load current: 116A
Case: TO240AA
Max. forward voltage: 1.82V
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
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IXDN604SI IXDN604SI IXYS IXDD604PI.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -4...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
на замовлення 878 шт:
термін постачання 14-30 дні (днів)
3+203.29 грн
50+159.99 грн
100+148.99 грн
200+138.83 грн
300+136.29 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IXDN604SITR IXYS littelfuse-integrated-circuits-ixd-604si-sia-datasheet?assetguid=9f38a290-f482-4588-95a1-b6b544380200 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -4...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
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DSEI2X121-02A DSEI2X121-02A IXYS DSEI2x121-02A.pdf Category: Diode modules
Description: Module: diode; double independent; 200V; If: 123Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 200V
Load current: 123A x2
Case: SOT227B
Max. forward voltage: 1.1V
Electrical mounting: screw
Max. load current: 246A
Mechanical mounting: screw
Max. forward impulse current: 1.3kA
Kind of package: tube
на замовлення 137 шт:
термін постачання 14-30 дні (днів)
1+2166.94 грн
5+1916.50 грн
В кошику  од. на суму  грн.
CPC1130NTR CPC1130NTR IXYS CPC1130N.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 30Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 2ms
Kind of output: MOSFET
Operating temperature: -40...85°C
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CPC1114N CPC1114N IXYS CPC1114N.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 400mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.4A
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 2Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
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CPC1150NTR CPC1150NTR IXYS CPC1150N.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 1ms
Turn-off time: 2ms
Kind of output: MOSFET
Operating temperature: -40...85°C
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CPC1114NTR CPC1114NTR IXYS CPC1114N.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 400mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.4A
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 2Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
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CS45-16IO1 CS45-16IO1 IXYS CS45-08IO1-DTE.pdf CS45-16IO1.pdf description Category: SMD/THT thyristors
Description: Thyristor; 1600V; Ifmax: 71A; 45A; Igt: 80mA; TO247AD; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 1.6kV
Max. load current: 71A
Load current: 45A
Gate current: 80mA
Case: TO247AD
Mounting: THT
Kind of package: tube
Max. forward impulse current: 520A
на замовлення 31 шт:
термін постачання 14-30 дні (днів)
1+556.09 грн
3+463.04 грн
5+428.33 грн
10+380.08 грн
15+352.15 грн
30+334.37 грн
В кошику  од. на суму  грн.
CS45-16IO1R CS45-16IO1R IXYS CS45-16io1R.pdf Category: SMD/THT thyristors
Description: Thyristor; 1.6kV; Ifmax: 71A; 45A; Igt: 80mA; TO247AD; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 1.6kV
Max. load current: 71A
Load current: 45A
Gate current: 80mA
Case: TO247AD
Mounting: THT
Kind of package: tube
Max. forward impulse current: 520A
на замовлення 260 шт:
термін постачання 14-30 дні (днів)
1+615.35 грн
5+474.05 грн
10+420.72 грн
30+392.78 грн
В кошику  од. на суму  грн.
CS45-12IO1 CS45-12IO1 IXYS CS45-08IO1-DTE.pdf Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 71A; 45A; Igt: 80mA; TO247AD; THT; tube
Case: TO247AD
Mounting: THT
Type of thyristor: thyristor
Gate current: 80mA
Load current: 45A
Max. load current: 71A
Max. forward impulse current: 520A
Max. off-state voltage: 1.2kV
Kind of package: tube
на замовлення 279 шт:
термін постачання 14-30 дні (днів)
1+474.05 грн
5+359.77 грн
10+310.67 грн
30+281.89 грн
В кошику  од. на суму  грн.
CS45-08io1 CS45-08io1 IXYS CS45-08IO1-DTE.pdf Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 71A; 45A; Igt: 80mA; TO247AD; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 71A
Load current: 45A
Gate current: 80mA
Case: TO247AD
Mounting: THT
Kind of package: tube
Max. forward impulse current: 520A
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IXFP30N25X3 IXFP30N25X3 IXYS IXFA(P,Y)30N25X3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 30A; 170W; TO220AB; 82ns
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Case: TO220AB
Type of transistor: N-MOSFET
Features of semiconductor devices: ultra junction x-class
Gate charge: 21nC
Reverse recovery time: 82ns
On-state resistance: 60mΩ
Drain current: 30A
Power dissipation: 170W
Drain-source voltage: 250V
Polarisation: unipolar
на замовлення 271 шт:
термін постачання 14-30 дні (днів)
1+480.43 грн
10+286.12 грн
В кошику  од. на суму  грн.
IXFY30N25X3 IXFY30N25X3 IXYS IXFA(P,Y)30N25X3.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 30A; 170W; TO252; 82ns
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Case: TO252
Type of transistor: N-MOSFET
Features of semiconductor devices: ultra junction x-class
Gate charge: 21nC
Reverse recovery time: 82ns
On-state resistance: 60mΩ
Drain current: 30A
Power dissipation: 170W
Drain-source voltage: 250V
Polarisation: unipolar
на замовлення 46 шт:
термін постачання 14-30 дні (днів)
2+358.27 грн
5+293.74 грн
25+274.27 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
FMM50-025TF FMM50-025TF IXYS DS100040A-(FMM50-025TF).pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; Trench; unipolar; 250V; 30A; Idm: 130A
Mounting: THT
Kind of package: tube
Semiconductor structure: double series
Kind of channel: enhancement
Technology: HiPerFET™; Trench
Case: ISOPLUS i4-pac™ x024a
Type of transistor: N-MOSFET x2
Gate charge: 78nC
Reverse recovery time: 84ns
On-state resistance: 60mΩ
Drain current: 30A
Gate-source voltage: ±30V
Power dissipation: 125W
Pulsed drain current: 130A
Drain-source voltage: 250V
Polarisation: unipolar
на замовлення 25 шт:
термін постачання 14-30 дні (днів)
1+1582.59 грн
3+1313.79 грн
10+1164.80 грн
25+1042.90 грн
В кошику  од. на суму  грн.
IXTP170N075T2 IXTP170N075T2 IXYS IXTA(P)170N075T2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 170A; 360W; TO220AB; 63ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 170A
Power dissipation: 360W
Case: TO220AB
On-state resistance: 5.4mΩ
Mounting: THT
Gate charge: 109nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 63ns
на замовлення 283 шт:
термін постачання 14-30 дні (днів)
2+310.87 грн
10+171.84 грн
50+171.00 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXTP100N04T2 IXTP100N04T2 IXYS IXTA(P)100N04T2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 150W; TO220AB; 34ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 150W
Case: TO220AB
On-state resistance: 7mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 34ns
на замовлення 300 шт:
термін постачання 14-30 дні (днів)
3+192.35 грн
10+111.74 грн
50+98.20 грн
100+94.81 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
DSEP15-06A DSEP15-06A IXYS DSEP15-06A.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; tube; Ifsm: 110A; TO220AC; 95W
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.35V
Load current: 15A
Max. forward impulse current: 110A
Case: TO220AC
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Heatsink thickness: 1.14...1.39mm
Power dissipation: 95W
Kind of package: tube
Technology: HiPerFRED™
Type of diode: rectifying
Mounting: THT
Reverse recovery time: 35ns
на замовлення 178 шт:
термін постачання 14-30 дні (днів)
3+200.56 грн
10+138.83 грн
15+127.82 грн
40+103.27 грн
50+99.89 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
LBB126PTR LBB126.pdf
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 170mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NC x2
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 15Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.66x6.35x2.16mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
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LBB126STR LBB126.pdf
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 170mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NC x2
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 15Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
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IXDI614SITR littelfuse-integrated-circuits-ixd-614-datasheet?assetguid=e66ef830-2f72-45bc-86ab-607383f42514
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SOIC8; 14A; Ch: 1; MOSFET
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SOIC8
Output current: 14A
Number of channels: 1
Integrated circuit features: MOSFET
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 25ns
Pulse fall time: 18ns
Application: automotive industry
Maximum output current: 14A
Supply voltage: 4.5...35V
Kind of output: N-Channel
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IX4310TTR littelfuse-integrated-circuits-ix4310t-datasheet?assetguid=f6c6e9cc-7c3e-472d-bad7-d563f01f2fa2
IX4310TTR
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SOT23-5; -2÷2A; Ch: 2; 5÷24V
Mounting: SMD
Operating temperature: -40...125°C
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Kind of output: non-inverting
Kind of package: reel; tape
Output current: -2...2A
Number of channels: 2
Supply voltage: 5...24V
Case: SOT23-5
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IXBOD1-25R IXBOD1_v2.pdf
Виробник: IXYS
Category: Thyristors - others
Description: Thyristor: BOD x3; 0.9A; BOD; THT; 2.5kV; bulk
Type of thyristor: BOD x3
Max. load current: 0.9A
Case: BOD
Mounting: THT
Breakover voltage: 2.5kV
Kind of package: bulk
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IXBOD1-25RD IXBOD1_v2.pdf
Виробник: IXYS
Category: Thyristors - others
Description: Thyristor: BOD x3; 0.2A; BOD; THT; 2.5kV; bulk
Type of thyristor: BOD x3
Max. load current: 0.2A
Case: BOD
Mounting: THT
Breakover voltage: 2.5kV
Features of semiconductor devices: version RD (internal diode)
Kind of package: bulk
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IXTP6N100D2 IXTA(H,P)6N100D2.pdf
IXTP6N100D2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 6A; 300W; TO220AB; 41ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 6A
Power dissipation: 300W
Case: TO220AB
On-state resistance: 2.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 41ns
на замовлення 350 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+662.75 грн
5+501.13 грн
10+446.11 грн
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IXFR26N100P IXFR26N100P.pdf
IXFR26N100P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 15A; 290W; ISOPLUS247™
Mounting: THT
Case: ISOPLUS247™
Kind of package: tube
Kind of channel: enhancement
Type of transistor: N-MOSFET
Gate charge: 197nC
On-state resistance: 0.43Ω
Drain current: 15A
Power dissipation: 290W
Drain-source voltage: 1kV
Polarisation: unipolar
на замовлення 6 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+3289.15 грн
3+2748.62 грн
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IXTP1R6N100D2 IXTA(P,Y)1R6N100D2.pdf
IXTP1R6N100D2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 1.6A; 100W; TO220AB; 11ns
Mounting: THT
Reverse recovery time: 11ns
Gate charge: 645nC
Drain current: 1.6A
On-state resistance: 10Ω
Gate-source voltage: ±20V
Power dissipation: 100W
Drain-source voltage: 1kV
Kind of channel: depletion
Type of transistor: N-MOSFET
Case: TO220AB
Kind of package: tube
Polarisation: unipolar
на замовлення 280 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
2+280.78 грн
10+228.56 грн
50+166.76 грн
100+148.14 грн
Мінімальне замовлення: 2
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IXTA6N100D2 IXTA(H,P)6N100D2.pdf
IXTA6N100D2
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 6A; 300W; TO263; 41ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 6A
Power dissipation: 300W
Case: TO263
On-state resistance: 2.2Ω
Mounting: SMD
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 41ns
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IXTH6N100D2 IXTA(H,P)6N100D2.pdf
IXTH6N100D2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 6A; 300W; TO247-3; 41ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 6A
Power dissipation: 300W
Case: TO247-3
On-state resistance: 2.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 41ns
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IXFN36N100 description IXFN36N100.pdf
IXFN36N100
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 36A; SOT227B; screw; Idm: 144A; 694W
Technology: HiPerFET™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 36A
Pulsed drain current: 144A
Power dissipation: 694W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 0.24Ω
Kind of channel: enhancement
Electrical mounting: screw
Semiconductor structure: single transistor
Type of semiconductor module: MOSFET transistor
Reverse recovery time: 180ns
Gate charge: 380nC
Mechanical mounting: screw
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IXFK26N100P IXFK26N100P_IXFX26N100P.pdf
IXFK26N100P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 26A; 780W; TO264; 300ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 26A
Power dissipation: 780W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 390mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 300ns
Gate charge: 197nC
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IXFX26N100P IXFK26N100P_IXFX26N100P.pdf
IXFX26N100P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 26A; 780W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 26A
Power dissipation: 780W
Case: PLUS247™
On-state resistance: 390mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 197nC
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IXTY1R6N100D2 IXTA(P,Y)1R6N100D2.pdf
IXTY1R6N100D2
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 1.6A; 100W; TO252; 11ns
Mounting: SMD
Reverse recovery time: 11ns
Gate charge: 645nC
Drain current: 1.6A
On-state resistance: 10Ω
Gate-source voltage: ±20V
Power dissipation: 100W
Drain-source voltage: 1kV
Kind of channel: depletion
Type of transistor: N-MOSFET
Case: TO252
Kind of package: tube
Polarisation: unipolar
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IXTA1R6N100D2 IXTA(P,Y)1R6N100D2.pdf
IXTA1R6N100D2
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 1.6A; 100W; TO263; 11ns
Mounting: SMD
Reverse recovery time: 11ns
Gate charge: 645nC
Drain current: 1.6A
On-state resistance: 10Ω
Gate-source voltage: ±20V
Power dissipation: 100W
Drain-source voltage: 1kV
Kind of channel: depletion
Type of transistor: N-MOSFET
Case: TO263
Kind of package: tube
Polarisation: unipolar
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IXTA1R6N100D2HV IXTA1R6N100D2HV.pdf
IXTA1R6N100D2HV
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 1.6A; 100W; TO263
Mounting: SMD
Reverse recovery time: 970ns
Gate charge: 27nC
Drain current: 1.6A
On-state resistance: 10Ω
Gate-source voltage: ±20V
Power dissipation: 100W
Drain-source voltage: 1kV
Kind of channel: depletion
Type of transistor: N-MOSFET
Technology: Polar™
Case: TO263
Kind of package: tube
Polarisation: unipolar
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CPC1117NTR CPC1117N.pdf
CPC1117NTR
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 150mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 150mA
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 16Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 10ms
Turn-off time: 10ms
Kind of output: MOSFET
Operating temperature: -40...85°C
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CPC1125N CPC1125N.pdf
CPC1125N
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 100mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 2ms
Operating temperature: -40...85°C
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CPC1125NTR CPC1125N.pdf
CPC1125NTR
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 100mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 2ms
Operating temperature: -40...85°C
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MDI550-12A4
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Y3-DCB
Case: Y3-DCB
Semiconductor structure: diode/transistor
Mechanical mounting: screw
Type of semiconductor module: IGBT
Technology: NPT
Gate-emitter voltage: ±20V
Max. off-state voltage: 1.2kV
Collector current: 460A
Pulsed collector current: 800A
Power dissipation: 2.75kW
Topology: buck chopper
Application: motors
Electrical mounting: FASTON connectors; screw
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MID550-12A4
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; NPT
Case: Y3-DCB
Semiconductor structure: diode/transistor
Mechanical mounting: screw
Type of semiconductor module: IGBT
Technology: NPT
Gate-emitter voltage: ±20V
Max. off-state voltage: 1.2kV
Collector current: 460A
Pulsed collector current: 800A
Power dissipation: 2.75kW
Topology: boost chopper
Application: motors
Electrical mounting: FASTON connectors; screw
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IXFN80N50 description IXFN80N50.pdf
IXFN80N50
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 80A; SOT227B; screw; Idm: 320A
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 80A
Pulsed drain current: 320A
Power dissipation: 694W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 55mΩ
Gate charge: 380nC
Kind of channel: enhancement
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of semiconductor module: MOSFET transistor
Technology: HiPerFET™
Reverse recovery time: 250ns
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CPC1014NTR CPC1014N.pdf
CPC1014NTR
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 400mA; max.60VAC
Operating temperature: -40...85°C
Case: SOP4
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NO
Kind of output: MOSFET
Turn-on time: 2ms
Turn-off time: 1ms
Body dimensions: 4.09x3.81x2.03mm
Control current max.: 50mA
Max. operating current: 0.4A
Manufacturer series: OptoMOS
On-state resistance: 2Ω
Relay variant: 1-phase; current source
Switched voltage: max. 60V AC; max. 60V DC
Insulation voltage: 1.5kV
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IXTY44N10T IXTP(Y)44N10T.pdf
IXTY44N10T
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 44A; 130W; TO252; 60ns
Case: TO252
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Type of transistor: N-MOSFET
Features of semiconductor devices: thrench gate power mosfet
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 44A
Reverse recovery time: 60ns
On-state resistance: 30mΩ
Power dissipation: 130W
на замовлення 425 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
3+213.32 грн
10+171.00 грн
25+138.83 грн
50+106.66 грн
70+96.50 грн
Мінімальне замовлення: 3
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IXTY1R6N50D2 IXTA(P,Y)1R6N50D2.pdf
IXTY1R6N50D2
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 1.6A; 100W; TO252; 400ns
Type of transistor: N-MOSFET
Power dissipation: 100W
Case: TO252
Mounting: SMD
Gate charge: 23.7nC
Kind of package: tube
Kind of channel: depletion
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 1.6A
Gate-source voltage: ±20V
Reverse recovery time: 400ns
On-state resistance: 2.3Ω
на замовлення 331 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
2+285.34 грн
10+203.16 грн
25+170.15 грн
30+163.38 грн
50+154.07 грн
Мінімальне замовлення: 2
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MCC312-12io1 MCC312-12IO1.pdf
MCC312-12io1
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 320Ax2; Ifmax: 520A; Y1-CU
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 320A x2
Max. load current: 520A
Case: Y1-CU
Max. forward voltage: 1.32V
Max. forward impulse current: 8kA
Gate current: 150/220mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
на замовлення 3 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+13154.79 грн
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IXDN604SIA IXDD604PI.pdf
IXDN604SIA
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -4...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
на замовлення 528 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
4+126.72 грн
10+87.19 грн
25+80.42 грн
Мінімальне замовлення: 4
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IXDN604SIATR littelfuse-integrated-circuits-ixd-604si-sia-datasheet?assetguid=9f38a290-f482-4588-95a1-b6b544380200
IXDN604SIATR
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -4...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
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IXTU4N70X2 ixty2n65x2.pdf
IXTU4N70X2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 4A; Idm: 8A; 80W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 4A
Pulsed drain current: 8A
Power dissipation: 80W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 11.8nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 68 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
3+169.56 грн
5+142.21 грн
25+125.28 грн
Мінімальне замовлення: 3
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IXTA4N70X2 ixty2n65x2.pdf
IXTA4N70X2
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 4A; Idm: 8A; 80W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 4A
Pulsed drain current: 8A
Power dissipation: 80W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 11.8nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 38 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
3+154.07 грн
10+135.44 грн
Мінімальне замовлення: 3
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IXTP4N70X2M IXTP4N70X2M.pdf
IXTP4N70X2M
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 4A; 30W; TO220FP; 186ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 4A
Power dissipation: 30W
Case: TO220FP
On-state resistance: 0.85Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 186ns
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IXTY18P10T IXT_18P10T.pdf
IXTY18P10T
Виробник: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -18A; 83W; TO252
Type of transistor: P-MOSFET
Technology: TrenchP™
Power dissipation: 83W
Case: TO252
Mounting: SMD
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhancement
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -18A
Gate-source voltage: ±15V
Reverse recovery time: 62ns
On-state resistance: 0.12Ω
на замовлення 344 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
2+319.98 грн
10+168.46 грн
Мінімальне замовлення: 2
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IXTY15P15T-TRL
Виробник: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; 150V; 15A; 150W; DPAK
Type of transistor: P-MOSFET
Power dissipation: 150W
Case: DPAK
Mounting: SMD
Kind of channel: enhancement
Drain-source voltage: 150V
Drain current: 15A
Gate-source voltage: -15...15V
On-state resistance: 0.24Ω
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IXTY18P10T-TRL
Виробник: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; 100V; 18A; 83W; DPAK,TO252AA
Type of transistor: P-MOSFET
Power dissipation: 83W
Case: DPAK; TO252AA
Mounting: SMD
Kind of channel: enhancement
Drain-source voltage: 100V
Drain current: 18A
Gate-source voltage: 15V
On-state resistance: 0.12Ω
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IXTY10P15T IXT_10P15T.pdf
IXTY10P15T
Виробник: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -150V; -10A; 83W; TO252
Type of transistor: P-MOSFET
Technology: TrenchP™
Power dissipation: 83W
Case: TO252
Mounting: SMD
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -10A
Gate-source voltage: ±15V
Reverse recovery time: 120ns
On-state resistance: 0.35Ω
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IXTY15P15T IXT_15P15T.pdf
IXTY15P15T
Виробник: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -150V; -15A; 150W; TO252
Type of transistor: P-MOSFET
Technology: TrenchP™
Power dissipation: 150W
Case: TO252
Mounting: SMD
Gate charge: 48nC
Kind of package: tube
Kind of channel: enhancement
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -15A
Gate-source voltage: ±15V
Reverse recovery time: 116ns
On-state resistance: 0.24Ω
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IXTY1N80P IXTA(P,U,Y)1N80P.pdf
IXTY1N80P
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1A; 42W; TO252; 700ns
Type of transistor: N-MOSFET
Power dissipation: 42W
Case: TO252
Mounting: SMD
Gate charge: 9nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1A
Reverse recovery time: 700ns
On-state resistance: 14Ω
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IXTY1N100P IXTA(P,Y)1N100P.pdf
IXTY1N100P
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 1A; 50W; TO252; 750ns
Type of transistor: N-MOSFET
Power dissipation: 50W
Case: TO252
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 1A
Reverse recovery time: 750ns
On-state resistance: 15Ω
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MMIX1Y100N120C3H1 MMIX1Y100N120C3H1.pdf
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.2kV; 40A; 400W; SMPD
Type of transistor: IGBT
Technology: BiMOSFET™; GenX3™; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 400W
Case: SMPD
Gate-emitter voltage: ±20V
Pulsed collector current: 440A
Mounting: SMD
Gate charge: 0.27µC
Kind of package: tube
Turn-on time: 122ns
Turn-off time: 265ns
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CMA80PD1600NA CMA80PD1600NA.pdf
CMA80PD1600NA
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 80A; SOT227B; Ufmax: 1.29V; screw
Mechanical mounting: screw
Load current: 80A
Gate current: 100/200mA
Max. load current: 126A
Threshold on-voltage: 0.86V
Max. forward voltage: 1.29V
Max. forward impulse current: 1.07kA
Max. off-state voltage: 1.6kV
Kind of package: bulk
Case: SOT227B
Semiconductor structure: double series
Type of semiconductor module: diode-thyristor
Electrical mounting: screw
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MCC72-08io1B PCN210915_TO240 screw.pdf PCN210930_TO240 screw.pdf
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 800V; 116A; TO240AA; Ufmax: 1.82V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 0.8kV
Load current: 116A
Case: TO240AA
Max. forward voltage: 1.82V
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
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MCC72-08io8B PCN210915_TO240 screw.pdf PCN210930_TO240 screw.pdf
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 800V; 116A; TO240AA; Ufmax: 1.82V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 0.8kV
Load current: 116A
Case: TO240AA
Max. forward voltage: 1.82V
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
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IXDN604SI IXDD604PI.pdf
IXDN604SI
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -4...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
на замовлення 878 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
3+203.29 грн
50+159.99 грн
100+148.99 грн
200+138.83 грн
300+136.29 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IXDN604SITR littelfuse-integrated-circuits-ixd-604si-sia-datasheet?assetguid=9f38a290-f482-4588-95a1-b6b544380200
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -4...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
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DSEI2X121-02A DSEI2x121-02A.pdf
DSEI2X121-02A
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double independent; 200V; If: 123Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 200V
Load current: 123A x2
Case: SOT227B
Max. forward voltage: 1.1V
Electrical mounting: screw
Max. load current: 246A
Mechanical mounting: screw
Max. forward impulse current: 1.3kA
Kind of package: tube
на замовлення 137 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+2166.94 грн
5+1916.50 грн
В кошику  од. на суму  грн.
CPC1130NTR CPC1130N.pdf
CPC1130NTR
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 30Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 2ms
Kind of output: MOSFET
Operating temperature: -40...85°C
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CPC1114N CPC1114N.pdf
CPC1114N
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 400mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.4A
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 2Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
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CPC1150NTR CPC1150N.pdf
CPC1150NTR
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 1ms
Turn-off time: 2ms
Kind of output: MOSFET
Operating temperature: -40...85°C
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CPC1114NTR CPC1114N.pdf
CPC1114NTR
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 400mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.4A
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 2Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
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CS45-16IO1 description CS45-08IO1-DTE.pdf CS45-16IO1.pdf
CS45-16IO1
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1600V; Ifmax: 71A; 45A; Igt: 80mA; TO247AD; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 1.6kV
Max. load current: 71A
Load current: 45A
Gate current: 80mA
Case: TO247AD
Mounting: THT
Kind of package: tube
Max. forward impulse current: 520A
на замовлення 31 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+556.09 грн
3+463.04 грн
5+428.33 грн
10+380.08 грн
15+352.15 грн
30+334.37 грн
В кошику  од. на суму  грн.
CS45-16IO1R CS45-16io1R.pdf
CS45-16IO1R
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.6kV; Ifmax: 71A; 45A; Igt: 80mA; TO247AD; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 1.6kV
Max. load current: 71A
Load current: 45A
Gate current: 80mA
Case: TO247AD
Mounting: THT
Kind of package: tube
Max. forward impulse current: 520A
на замовлення 260 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+615.35 грн
5+474.05 грн
10+420.72 грн
30+392.78 грн
В кошику  од. на суму  грн.
CS45-12IO1 CS45-08IO1-DTE.pdf
CS45-12IO1
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 71A; 45A; Igt: 80mA; TO247AD; THT; tube
Case: TO247AD
Mounting: THT
Type of thyristor: thyristor
Gate current: 80mA
Load current: 45A
Max. load current: 71A
Max. forward impulse current: 520A
Max. off-state voltage: 1.2kV
Kind of package: tube
на замовлення 279 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+474.05 грн
5+359.77 грн
10+310.67 грн
30+281.89 грн
В кошику  од. на суму  грн.
CS45-08io1 CS45-08IO1-DTE.pdf
CS45-08io1
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 71A; 45A; Igt: 80mA; TO247AD; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 71A
Load current: 45A
Gate current: 80mA
Case: TO247AD
Mounting: THT
Kind of package: tube
Max. forward impulse current: 520A
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IXFP30N25X3 IXFA(P,Y)30N25X3.pdf
IXFP30N25X3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 30A; 170W; TO220AB; 82ns
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Case: TO220AB
Type of transistor: N-MOSFET
Features of semiconductor devices: ultra junction x-class
Gate charge: 21nC
Reverse recovery time: 82ns
On-state resistance: 60mΩ
Drain current: 30A
Power dissipation: 170W
Drain-source voltage: 250V
Polarisation: unipolar
на замовлення 271 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+480.43 грн
10+286.12 грн
В кошику  од. на суму  грн.
IXFY30N25X3 IXFA(P,Y)30N25X3.pdf
IXFY30N25X3
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 30A; 170W; TO252; 82ns
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Case: TO252
Type of transistor: N-MOSFET
Features of semiconductor devices: ultra junction x-class
Gate charge: 21nC
Reverse recovery time: 82ns
On-state resistance: 60mΩ
Drain current: 30A
Power dissipation: 170W
Drain-source voltage: 250V
Polarisation: unipolar
на замовлення 46 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
2+358.27 грн
5+293.74 грн
25+274.27 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
FMM50-025TF DS100040A-(FMM50-025TF).pdf
FMM50-025TF
Виробник: IXYS
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; Trench; unipolar; 250V; 30A; Idm: 130A
Mounting: THT
Kind of package: tube
Semiconductor structure: double series
Kind of channel: enhancement
Technology: HiPerFET™; Trench
Case: ISOPLUS i4-pac™ x024a
Type of transistor: N-MOSFET x2
Gate charge: 78nC
Reverse recovery time: 84ns
On-state resistance: 60mΩ
Drain current: 30A
Gate-source voltage: ±30V
Power dissipation: 125W
Pulsed drain current: 130A
Drain-source voltage: 250V
Polarisation: unipolar
на замовлення 25 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+1582.59 грн
3+1313.79 грн
10+1164.80 грн
25+1042.90 грн
В кошику  од. на суму  грн.
IXTP170N075T2 IXTA(P)170N075T2.pdf
IXTP170N075T2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 170A; 360W; TO220AB; 63ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 170A
Power dissipation: 360W
Case: TO220AB
On-state resistance: 5.4mΩ
Mounting: THT
Gate charge: 109nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 63ns
на замовлення 283 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
2+310.87 грн
10+171.84 грн
50+171.00 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXTP100N04T2 IXTA(P)100N04T2.pdf
IXTP100N04T2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 150W; TO220AB; 34ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 150W
Case: TO220AB
On-state resistance: 7mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 34ns
на замовлення 300 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
3+192.35 грн
10+111.74 грн
50+98.20 грн
100+94.81 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
DSEP15-06A DSEP15-06A.pdf
DSEP15-06A
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; tube; Ifsm: 110A; TO220AC; 95W
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.35V
Load current: 15A
Max. forward impulse current: 110A
Case: TO220AC
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Heatsink thickness: 1.14...1.39mm
Power dissipation: 95W
Kind of package: tube
Technology: HiPerFRED™
Type of diode: rectifying
Mounting: THT
Reverse recovery time: 35ns
на замовлення 178 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
3+200.56 грн
10+138.83 грн
15+127.82 грн
40+103.27 грн
50+99.89 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
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