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IXYH16N250C IXYS DS100793A(IXYH16N250C)_.pdf Description: IGBT 2500V 35A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 19 ns
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 16A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 14ns/260ns
Switching Energy: 4.75mJ (on), 3.9mJ (off)
Test Condition: 1250V, 16A, 10Ohm, 15V
Gate Charge: 97 nC
Part Status: Active
Current - Collector (Ic) (Max): 35 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 126 A
Power - Max: 500 W
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IXYH16N250CV1HV IXYH16N250CV1HV IXYS littelfuse-discrete-igbts-ixyh16n250cv1hv-datasheet?assetguid=5318cb59-5d48-4684-be30-d9ed77832219 Description: IGBT 2500V 35A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 19 ns
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 16A
Supplier Device Package: TO-247 (IXYH)
Td (on/off) @ 25°C: 14ns/260ns
Switching Energy: 4.75mJ (on), 3.9mJ (off)
Test Condition: 1250V, 16A, 10Ohm, 15V
Gate Charge: 97 nC
Part Status: Active
Current - Collector (Ic) (Max): 35 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 126 A
Power - Max: 500 W
на замовлення 855 шт:
термін постачання 21-31 дні (днів)
1+2277.97 грн
30+1436.86 грн
120+1404.93 грн
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IXFC24N50Q IXFC24N50Q IXYS IXFC26N50,_IXFC24N50.pdf Description: MOSFET N-CH 500V 21A ISOPLUS220
Packaging: Bulk
Package / Case: ISOPLUS220™
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 10.5A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4V @ 4mA
Supplier Device Package: ISOPLUS220™
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V
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IXFD23N60Q-72 IXYS Description: MOSFET N-CHANNEL 600V DIE
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IXFD24N50Q-72 IXYS Description: MOSFET N-CH
Packaging: Bulk
Part Status: Obsolete
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IXFD26N50Q-72 IXYS Description: MOSFET N-CHANNEL 500V DIE
Packaging: Bulk
Package / Case: Die
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Supplier Device Package: Die
Part Status: Obsolete
Drain to Source Voltage (Vdss): 500 V
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IXFD26N60Q-8XQ IXYS Description: MOSFET N-CH
Packaging: Bulk
Part Status: Obsolete
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IXFD40N30Q-72 IXYS Description: MOSFET N-CHANNEL 300V DIE
Packaging: Bulk
Package / Case: Die
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Supplier Device Package: Die
Part Status: Obsolete
Drain to Source Voltage (Vdss): 300 V
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IXFJ32N50 IXYS Description: MOSFET N-CH TO-220
Packaging: Tube
Part Status: Obsolete
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IXFJ40N30Q IXFJ40N30Q IXYS IXFJ40N30.pdf Description: MOSFET N-CHANNEL 300V 40A TO268
Packaging: Tube
Package / Case: 3-SIP
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 20A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 4mA
Supplier Device Package: TO-268
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
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IXFR21N50Q IXYS Description: MOSFET N-CH ISOPLUS247
Packaging: Tube
Part Status: Obsolete
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IXFR32N50 IXYS Description: MOSFET N-CH ISOPLUS247
Packaging: Tube
Part Status: Obsolete
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IXFX60N25Q IXYS Description: MOSFET N-CH PLUS247
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IXTH21N50Q IXYS IXT%28H%2CM%2921N50%2CIXT%28H%2CM%2924N50.pdf Description: MOSFET N-CH 500V 21A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 10.5A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AD
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V
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IXFT26N50Q TR IXYS IXF%28H%2CT%2924N50Q%2C_IXF%28H%2CT%2926N50Q.pdf Description: MOSFET N-CH 500V 26A TO268
Packaging: Tape & Reel (TR)
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 13A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-268HV (IXFT)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 25 V
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IXFT40N30Q TR IXYS IXF%28H%2CT%2940N30Q.pdf Description: MOSFET N-CH 300V 40A TO268
Packaging: Tape & Reel (TR)
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 20A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 4mA
Supplier Device Package: TO-268HV (IXFT)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3560 pF @ 25 V
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DCG100X1200NA DCG100X1200NA IXYS DCG100X1200NA.pdf Description: DIODE MOD SCHOTTKY 1200V SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 49A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 50 A
Current - Reverse Leakage @ Vr: 500 µA @ 1200 V
на замовлення 8 шт:
термін постачання 21-31 дні (днів)
1+12100.33 грн
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DCG130X1200NA DCG130X1200NA IXYS media?resourcetype=datasheets&itemid=6a83c2d9-3c20-43d3-8da7-e72457acf58a&filename=Littelfuse-Power-Semiconductors-DCG130X1200NA-Datasheet Description: DIODE MOD SIC 1200V 64A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 64A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 60 A
Current - Reverse Leakage @ Vr: 800 µA @ 1200 V
на замовлення 256 шт:
термін постачання 21-31 дні (днів)
1+15388.52 грн
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IXFQ120N25X3 IXFQ120N25X3 IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_120n25x3_datasheet.pdf.pdf Description: MOSFET N-CHANNEL 250V 120A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 60A, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7870 pF @ 25 V
на замовлення 746 шт:
термін постачання 21-31 дні (днів)
1+966.34 грн
10+855.19 грн
100+722.25 грн
500+602.96 грн
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IXFT120N25X3HV IXFT120N25X3HV IXYS littelfuse-discrete-mosfets-ixf-120n25x3-datasheet?assetguid=32d93b23-abe5-4e3b-9e77-4ead47fb5303 Description: MOSFET N-CH 250V 120A TO268HV
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 60A, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-268AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7870 pF @ 25 V
на замовлення 1303 шт:
термін постачання 21-31 дні (днів)
1+1132.78 грн
30+671.61 грн
120+579.76 грн
510+541.30 грн
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DSA15IM150UC-TRL IXYS media?resourcetype=datasheets&itemid=51139561-b5d6-4fbf-a5b5-e3e0450cdf00&filename=power_semiconductor_discrete_diode_dsa15im150uc_datasheet.pdf Description: DIODE SCHOTTKY 150V 15A TO252
Packaging: Tape & Reel (TR)
Part Status: Discontinued at Digi-Key
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 82pF @ 24V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-252AA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 15 A
Current - Reverse Leakage @ Vr: 250 µA @ 150 V
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IXFA36N20X3 IXFA36N20X3 IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_36n20x3_datasheet.pdf.pdf Description: MOSFET N-CH 200V 36A TO263AA
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 18A, 10V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 500µA
Supplier Device Package: TO-263AA (IXFA)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1425 pF @ 25 V
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IXFQ72N20X3 IXFQ72N20X3 IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_72n20x3_datasheet.pdf.pdf Description: MOSFET N-CH 200V 72A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 36A, 10V
Power Dissipation (Max): 320W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3780 pF @ 25 V
на замовлення 23 шт:
термін постачання 21-31 дні (днів)
1+794.93 грн
10+691.49 грн
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IXFP90N20X3 IXFP90N20X3 IXYS littelfuse-discrete-mosfets-ixf-90n20x3-datasheet?assetguid=ef17b718-d7de-4f53-8035-337c9d3e0de8 Description: MOSFET N-CH 200V 90A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 12.8mOhm @ 45A, 10V
Power Dissipation (Max): 390W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5420 pF @ 25 V
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IXFP90N20X3M IXFP90N20X3M IXYS littelfuse-discrete-mosfets-ixfp90n20x3m-datasheet?assetguid=006f1305-f7af-44eb-b713-23345c7030a4 Description: MOSFET N-CH 200V 90A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 12.8mOhm @ 45A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
Supplier Device Package: TO-220 Isolated Tab
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5420 pF @ 25 V
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IXFH140N20X3 IXFH140N20X3 IXYS littelfuse-discrete-mosfets-ixf-140n20x3-datasheet?assetguid=d2c3adb4-1ffe-4768-b76e-d7d00e600842 Description: MOSFET N-CH 200V 140A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 70A, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7660 pF @ 25 V
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IXFQ140N20X3 IXFQ140N20X3 IXYS littelfuse-discrete-mosfets-ixf-140n20x3-datasheet?assetguid=d2c3adb4-1ffe-4768-b76e-d7d00e600842 Description: MOSFET N-CH 200V 140A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 70A, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7660 pF @ 25 V
на замовлення 28 шт:
термін постачання 21-31 дні (днів)
1+994.49 грн
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IXFT140N20X3HV IXFT140N20X3HV IXYS littelfuse-discrete-mosfets-ixf-140n20x3-datasheet?assetguid=d2c3adb4-1ffe-4768-b76e-d7d00e600842 Description: MOSFET N-CH 200V 140A TO268HV
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 70A, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-268HV (IXFT)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7660 pF @ 25 V
на замовлення 17 шт:
термін постачання 21-31 дні (днів)
1+1132.78 грн
В кошику  од. на суму  грн.
IXFN220N20X3 IXFN220N20X3 IXYS littelfuse-discrete-mosfets-ixfn220n20x3-datasheet?assetguid=7f9d048f-b652-432d-a9b0-e166f13b2193 Description: MOSFET N-CH 200V 160A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 110A, 10V
Power Dissipation (Max): 390W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 204 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 25 V
на замовлення 191 шт:
термін постачання 21-31 дні (днів)
1+2547.09 грн
10+1817.24 грн
100+1612.46 грн
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IXFK220N20X3 IXFK220N20X3 IXYS littelfuse-discrete-mosfets-ixf-220n20x3-datasheet?assetguid=6f4e90fe-6272-422e-a0c7-6b3f43b68d9b Description: MOSFET N-CH 200V 220A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 220A (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 110A, 10V
Power Dissipation (Max): 960W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-264
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 204 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 25 V
на замовлення 247 шт:
термін постачання 21-31 дні (днів)
1+1053.28 грн
25+907.49 грн
100+865.15 грн
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IXFH220N20X3 IXFH220N20X3 IXYS littelfuse-discrete-mosfets-ixf-220n20x3-datasheet?assetguid=6f4e90fe-6272-422e-a0c7-6b3f43b68d9b Description: MOSFET N-CH 200V 220A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 220A (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 110A, 10V
Power Dissipation (Max): 960W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 204 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 25 V
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IXFX300N20X3 IXFX300N20X3 IXYS littelfuse-discrete-mosfets-ixf-300n20x3-datasheet?assetguid=53bbefbe-ccd6-4511-b54f-ab0660bbdb90 Description: MOSFET N-CH 200V 300A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 150A, 10V
Power Dissipation (Max): 1250W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 8mA
Supplier Device Package: PLUS247™-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 375 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23800 pF @ 25 V
на замовлення 730 шт:
термін постачання 21-31 дні (днів)
1+2319.37 грн
30+1700.00 грн
120+1640.41 грн
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IXFN300N20X3 IXFN300N20X3 IXYS littelfuse-discrete-mosfets-ixfn300n20x3-datasheet?assetguid=51be43a2-5129-4449-8dce-f187571aa6ec Description: MOSFET N-CH 200V 300A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 150A, 10V
Power Dissipation (Max): 695W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 375 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23800 pF @ 25 V
на замовлення 239 шт:
термін постачання 21-31 дні (днів)
1+3280.74 грн
10+2376.68 грн
100+2208.48 грн
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IXFH72N30X3 IXFH72N30X3 IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_72n30x3_datasheet.pdf.pdf Description: MOSFET N-CH 300V 72A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 36A, 10V
Power Dissipation (Max): 390W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 25 V
на замовлення 99 шт:
термін постачання 21-31 дні (днів)
1+909.20 грн
10+750.26 грн
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IXFH100N30X3 IXFH100N30X3 IXYS littelfusediscretemosfetsnchannelultrajunctionixf100n30x3hvdatasheetpdf.pdf Description: MOSFET N-CH 300V 100A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 50A, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7660 pF @ 25 V
на замовлення 304 шт:
термін постачання 21-31 дні (днів)
1+1069.84 грн
30+631.18 грн
120+543.71 грн
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IXFH120N30X3 IXFH120N30X3 IXYS DS100865AIXFTFH120N30X3HV.pdf Description: MOSFET N-CH 300V 120A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 60A, 10V
Power Dissipation (Max): 735W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 25 V
на замовлення 5185 шт:
термін постачання 21-31 дні (днів)
1+1282.65 грн
30+768.73 грн
120+676.77 грн
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IXFP38N30X3M IXFP38N30X3M IXYS littelfuse-discrete-mosfets-ixfp38n30x3m-datasheet?assetguid=beda6aca-89ff-4274-bbc4-15cadd4140b0 Description: MOSFET N-CH 300V 38A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Power Dissipation (Max): 34W (Tc)
Supplier Device Package: TO-220 Isolated Tab
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2440 pF @ 25 V
на замовлення 2174 шт:
термін постачання 21-31 дні (днів)
1+352.75 грн
50+203.60 грн
100+202.21 грн
500+180.91 грн
1000+179.10 грн
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IXFP38N30X3 IXFP38N30X3 IXYS littelfuse-discrete-mosfets-ixf-38n30x3-datasheet?assetguid=bf5a0d57-37da-484a-a94b-aa873a26c7d4 Description: MOSFET N-CH 300V 38A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 19A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2240 pF @ 25 V
на замовлення 665 шт:
термін постачання 21-31 дні (днів)
1+441.35 грн
50+200.81 грн
100+199.42 грн
500+178.81 грн
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CS19-12HO1S-TUB CS19-12HO1S-TUB IXYS media?resourcetype=datasheets&itemid=87ae741a-fff5-4217-b553-69a020cd606c&filename=Littelfuse-Power-Semiconductors-CS19-12HO1S-Datasheet Description: SCR 1200V 31A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 50 mA
Current - Gate Trigger (Igt) (Max): 28 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 180A, 195A
Current - On State (It (AV)) (Max): 20 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Voltage - On State (Vtm) (Max): 1.32 V
Current - Off State (Max): 50 µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Current - On State (It (RMS)) (Max): 31 A
Voltage - Off State: 1.2 kV
на замовлення 50 шт:
термін постачання 21-31 дні (днів)
2+251.73 грн
50+192.06 грн
Мінімальне замовлення: 2
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DSP8-12AS-TUB DSP8-12AS-TUB IXYS Littelfuse-Power-Semiconductors-DSP8-12AS-Datasheet?assetguid=0a50aae9-2beb-4071-ac11-756d406726b3 Description: DIODE ARRAY GP 1200V 8A TO263
Packaging: Tube
Package / Case: TO-263-4, D2PAK (3 Leads + Tab), TO-263AA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 8A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 16 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
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DSSK16-01AS-TUB IXYS Description: DIODE ARRAY SCHOTTKY
Packaging: Tube
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DSSK28-0045BS-TUB IXYS Description: DIODE ARRAY SCHOTTKY
Packaging: Tube
Operating Temperature - Junction: -55°C ~ 150°C
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DSSK28-01AS-TUB IXYS DSSK28-01AS.pdf Description: DIODE ARRAY SCHOTTKY
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DSSK38-0025BS-TUB IXYS DSSK38-0025B.pdf Description: DIODE ARRAY SCHOTTKY
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DSSK48-003BS-TUB DSSK48-003BS-TUB IXYS DSSK48-003BS.pdf Description: DIODE ARRAY SCHOTTKY
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 25A
Supplier Device Package: TO-263AA
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 40 A
Current - Reverse Leakage @ Vr: 20 mA @ 30 V
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IXBA16N170AHV IXBA16N170AHV IXYS littelfuse_discrete_igbts_bimosfet_ixb_16n170ahv_datasheet.pdf.pdf Description: REVERSE CONDUCTING IGBT
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 6V @ 15V, 10A
Supplier Device Package: TO-263HV
Td (on/off) @ 25°C: 15ns/250ns
Switching Energy: 2.5mJ (off)
Test Condition: 1360V, 10A, 10Ohm, 15V
Gate Charge: 65 nC
Part Status: Active
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 40 A
Power - Max: 150 W
на замовлення 25 шт:
термін постачання 21-31 дні (днів)
1+2279.63 грн
10+2024.32 грн
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IXBT16N170AHV IXBT16N170AHV IXYS littelfuse-discrete-igbts-ixb-16n170ahv-datasheet?assetguid=b3252f19-7d0e-4201-bbe6-5bf7c9acb58a Description: IGBT 1700V 16A TO-268HV
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 6V @ 15V, 10A
Supplier Device Package: TO-268HV (IXBT)
Td (on/off) @ 25°C: 15ns/250ns
Switching Energy: 2.5mJ (off)
Test Condition: 1360V, 10A, 10Ohm, 15V
Gate Charge: 65 nC
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 40 A
Power - Max: 150 W
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IXDA20N120AS-TUB IXYS littelfuse_discrete_igbts_npt_ixda20n120as_datasheet.pdf.pdf Description: IGBT
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A
Supplier Device Package: TO-263AA
IGBT Type: NPT
Td (on/off) @ 25°C: 100ns/500ns
Switching Energy: 3.1mJ (on), 2.4mJ (off)
Test Condition: 600V, 20A, 82Ohm, 15V
Gate Charge: 70 nC
Part Status: Active
Current - Collector (Ic) (Max): 38 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 35 A
Power - Max: 200 W
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IXFA12N65X2 IXFA12N65X2 IXYS littelfuse-discrete-mosfets-ixf-12n65x2-datasheet?assetguid=ca7fb720-7825-4c0e-b2dd-7746de20884a Description: MOSFET N-CH 650V 12A TO263AA
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 310mOhm @ 6A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263AA (IXFA)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 18.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1134 pF @ 25 V
на замовлення 213 шт:
термін постачання 21-31 дні (днів)
1+378.42 грн
50+190.06 грн
100+173.25 грн
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IXFH150N25X3HV IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_150n25x3_datasheet.pdf.pdf Description: MOSFET N-CH
Packaging: Tube
Vgs (Max): ±20V
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IXFH60N65X2-4 IXFH60N65X2-4 IXYS littelfuse-discrete-mosfets-ixfh60n65x2-4-datasheet?assetguid=73c34020-27de-40d3-8db0-a4119231366f Description: MOSFET N-CH 650V 60A TO247-4L
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 30A, 10V
Power Dissipation (Max): 780W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-247-4L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 25 V
на замовлення 298 шт:
термін постачання 21-31 дні (днів)
1+1034.24 грн
30+608.24 грн
120+523.30 грн
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IXFN50N120SIC IXFN50N120SIC IXYS media?resourcetype=datasheets&itemid=33f7d771-ce0f-41aa-bfb2-afd78da82db4&filename=Littelfuse-Power-Semiconductors-IXFN50N120SiC-Datasheet Description: SICFET N-CH 1200V 47A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 40A, 20V
Vgs(th) (Max) @ Id: 2.4V @ 10mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 1000 V
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IXFN50N120SK IXFN50N120SK IXYS media?resourcetype=datasheets&itemid=bd339330-b6b9-4c90-b751-d8293a8ae31c&filename=Littelfuse-Power-Semiconductors-IXFN50N120SK-Datasheet Description: SICFET N-CH 1200V 48A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 40A, 20V
Vgs(th) (Max) @ Id: 2.8V @ 10mA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1895 pF @ 1000 V
на замовлення 17 шт:
термін постачання 21-31 дні (днів)
1+5578.59 грн
10+4607.20 грн
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IXFP12N65X2 IXFP12N65X2 IXYS littelfuse-discrete-mosfets-ixf-12n65x2-datasheet?assetguid=ca7fb720-7825-4c0e-b2dd-7746de20884a Description: MOSFET N-CH 650V 12A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 310mOhm @ 6A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 18.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1134 pF @ 25 V
на замовлення 161 шт:
термін постачання 21-31 дні (днів)
1+361.86 грн
50+181.28 грн
100+165.10 грн
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IXFP22N65X2M IXFP22N65X2M IXYS littelfuse-discrete-mosfets-ixfp22n65x2m-datasheet?assetguid=1846557d-8386-447c-a978-b7259fcbc471 Description: MOSFET N-CH 650V 22A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 11A, 10V
Power Dissipation (Max): 37W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1.5mA
Supplier Device Package: TO-220 Isolated Tab
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2190 pF @ 25 V
на замовлення 776 шт:
термін постачання 21-31 дні (днів)
1+422.31 грн
50+214.56 грн
100+196.00 грн
500+153.43 грн
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IXFP34N65X2M IXFP34N65X2M IXYS littelfuse-discrete-mosfets-ixfp34n65x2m-datasheet?assetguid=3414df11-8c70-4e14-bf5d-9194b3534837 Description: MOSFET N-CH 650V 34A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 17A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1.5mA
Supplier Device Package: TO-220 Isolated Tab
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3230 pF @ 25 V
на замовлення 450 шт:
термін постачання 21-31 дні (днів)
1+617.73 грн
50+325.56 грн
100+299.59 грн
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IXFP8N65X2 IXFP8N65X2 IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_8n65x2_datasheet.pdf.pdf Description: MOSFET N-CH 650V 8A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 4A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 25 V
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IXFT60N65X2HV IXFT60N65X2HV IXYS littelfuse-discrete-mosfets-ixft60n65x2hv-datasheet?assetguid=3485acae-ba87-438d-bfcb-dacb7ee73cf2 Description: MOSFET N-CH 650V 60A TO268HV
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 30A, 10V
Power Dissipation (Max): 780W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-268HV (IXFT)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 25 V
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IXGA36N60A3 IXGA36N60A3 IXYS littelfuse-discrete-igbts-ixg-36n60a3-datasheet?assetguid=c23e0bfa-71be-4fc5-95ce-1a86be9b836e Description: IGBT PT 600V TO-263AA
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 23 ns
Vce(on) (Max) @ Vge, Ic: 1.4V @ 15V, 30A
Supplier Device Package: TO-263AA
IGBT Type: PT
Td (on/off) @ 25°C: 18ns/330ns
Switching Energy: 740µJ (on), 3mJ (off)
Test Condition: 400V, 30A, 5Ohm, 15V
Gate Charge: 80 nC
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 220 W
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IXGH28N60A3 IXYS littelfuse_discrete_igbts_pt_ixg_28n60a3_datasheet.pdf.pdf Description: IGBT
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IXYH16N250C DS100793A(IXYH16N250C)_.pdf
Виробник: IXYS
Description: IGBT 2500V 35A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 19 ns
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 16A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 14ns/260ns
Switching Energy: 4.75mJ (on), 3.9mJ (off)
Test Condition: 1250V, 16A, 10Ohm, 15V
Gate Charge: 97 nC
Part Status: Active
Current - Collector (Ic) (Max): 35 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 126 A
Power - Max: 500 W
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IXYH16N250CV1HV littelfuse-discrete-igbts-ixyh16n250cv1hv-datasheet?assetguid=5318cb59-5d48-4684-be30-d9ed77832219
IXYH16N250CV1HV
Виробник: IXYS
Description: IGBT 2500V 35A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 19 ns
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 16A
Supplier Device Package: TO-247 (IXYH)
Td (on/off) @ 25°C: 14ns/260ns
Switching Energy: 4.75mJ (on), 3.9mJ (off)
Test Condition: 1250V, 16A, 10Ohm, 15V
Gate Charge: 97 nC
Part Status: Active
Current - Collector (Ic) (Max): 35 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 126 A
Power - Max: 500 W
на замовлення 855 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2277.97 грн
30+1436.86 грн
120+1404.93 грн
В кошику  од. на суму  грн.
IXFC24N50Q IXFC26N50,_IXFC24N50.pdf
IXFC24N50Q
Виробник: IXYS
Description: MOSFET N-CH 500V 21A ISOPLUS220
Packaging: Bulk
Package / Case: ISOPLUS220™
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 10.5A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4V @ 4mA
Supplier Device Package: ISOPLUS220™
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V
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IXFD23N60Q-72
Виробник: IXYS
Description: MOSFET N-CHANNEL 600V DIE
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IXFD24N50Q-72
Виробник: IXYS
Description: MOSFET N-CH
Packaging: Bulk
Part Status: Obsolete
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IXFD26N50Q-72
Виробник: IXYS
Description: MOSFET N-CHANNEL 500V DIE
Packaging: Bulk
Package / Case: Die
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Supplier Device Package: Die
Part Status: Obsolete
Drain to Source Voltage (Vdss): 500 V
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IXFD26N60Q-8XQ
Виробник: IXYS
Description: MOSFET N-CH
Packaging: Bulk
Part Status: Obsolete
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IXFD40N30Q-72
Виробник: IXYS
Description: MOSFET N-CHANNEL 300V DIE
Packaging: Bulk
Package / Case: Die
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Supplier Device Package: Die
Part Status: Obsolete
Drain to Source Voltage (Vdss): 300 V
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IXFJ32N50
Виробник: IXYS
Description: MOSFET N-CH TO-220
Packaging: Tube
Part Status: Obsolete
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IXFJ40N30Q IXFJ40N30.pdf
IXFJ40N30Q
Виробник: IXYS
Description: MOSFET N-CHANNEL 300V 40A TO268
Packaging: Tube
Package / Case: 3-SIP
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 20A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 4mA
Supplier Device Package: TO-268
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
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IXFR21N50Q
Виробник: IXYS
Description: MOSFET N-CH ISOPLUS247
Packaging: Tube
Part Status: Obsolete
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IXFR32N50
Виробник: IXYS
Description: MOSFET N-CH ISOPLUS247
Packaging: Tube
Part Status: Obsolete
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IXFX60N25Q
Виробник: IXYS
Description: MOSFET N-CH PLUS247
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IXTH21N50Q IXT%28H%2CM%2921N50%2CIXT%28H%2CM%2924N50.pdf
Виробник: IXYS
Description: MOSFET N-CH 500V 21A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 10.5A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AD
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V
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IXFT26N50Q TR IXF%28H%2CT%2924N50Q%2C_IXF%28H%2CT%2926N50Q.pdf
Виробник: IXYS
Description: MOSFET N-CH 500V 26A TO268
Packaging: Tape & Reel (TR)
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 13A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-268HV (IXFT)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 25 V
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IXFT40N30Q TR IXF%28H%2CT%2940N30Q.pdf
Виробник: IXYS
Description: MOSFET N-CH 300V 40A TO268
Packaging: Tape & Reel (TR)
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 20A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 4mA
Supplier Device Package: TO-268HV (IXFT)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3560 pF @ 25 V
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DCG100X1200NA DCG100X1200NA.pdf
DCG100X1200NA
Виробник: IXYS
Description: DIODE MOD SCHOTTKY 1200V SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 49A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 50 A
Current - Reverse Leakage @ Vr: 500 µA @ 1200 V
на замовлення 8 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+12100.33 грн
В кошику  од. на суму  грн.
DCG130X1200NA media?resourcetype=datasheets&itemid=6a83c2d9-3c20-43d3-8da7-e72457acf58a&filename=Littelfuse-Power-Semiconductors-DCG130X1200NA-Datasheet
DCG130X1200NA
Виробник: IXYS
Description: DIODE MOD SIC 1200V 64A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 64A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 60 A
Current - Reverse Leakage @ Vr: 800 µA @ 1200 V
на замовлення 256 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+15388.52 грн
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IXFQ120N25X3 littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_120n25x3_datasheet.pdf.pdf
IXFQ120N25X3
Виробник: IXYS
Description: MOSFET N-CHANNEL 250V 120A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 60A, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7870 pF @ 25 V
на замовлення 746 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+966.34 грн
10+855.19 грн
100+722.25 грн
500+602.96 грн
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IXFT120N25X3HV littelfuse-discrete-mosfets-ixf-120n25x3-datasheet?assetguid=32d93b23-abe5-4e3b-9e77-4ead47fb5303
IXFT120N25X3HV
Виробник: IXYS
Description: MOSFET N-CH 250V 120A TO268HV
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 60A, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-268AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7870 pF @ 25 V
на замовлення 1303 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1132.78 грн
30+671.61 грн
120+579.76 грн
510+541.30 грн
В кошику  од. на суму  грн.
DSA15IM150UC-TRL media?resourcetype=datasheets&itemid=51139561-b5d6-4fbf-a5b5-e3e0450cdf00&filename=power_semiconductor_discrete_diode_dsa15im150uc_datasheet.pdf
Виробник: IXYS
Description: DIODE SCHOTTKY 150V 15A TO252
Packaging: Tape & Reel (TR)
Part Status: Discontinued at Digi-Key
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 82pF @ 24V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-252AA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 15 A
Current - Reverse Leakage @ Vr: 250 µA @ 150 V
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IXFA36N20X3 littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_36n20x3_datasheet.pdf.pdf
IXFA36N20X3
Виробник: IXYS
Description: MOSFET N-CH 200V 36A TO263AA
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 18A, 10V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 500µA
Supplier Device Package: TO-263AA (IXFA)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1425 pF @ 25 V
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IXFQ72N20X3 littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_72n20x3_datasheet.pdf.pdf
IXFQ72N20X3
Виробник: IXYS
Description: MOSFET N-CH 200V 72A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 36A, 10V
Power Dissipation (Max): 320W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3780 pF @ 25 V
на замовлення 23 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+794.93 грн
10+691.49 грн
В кошику  од. на суму  грн.
IXFP90N20X3 littelfuse-discrete-mosfets-ixf-90n20x3-datasheet?assetguid=ef17b718-d7de-4f53-8035-337c9d3e0de8
IXFP90N20X3
Виробник: IXYS
Description: MOSFET N-CH 200V 90A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 12.8mOhm @ 45A, 10V
Power Dissipation (Max): 390W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5420 pF @ 25 V
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IXFP90N20X3M littelfuse-discrete-mosfets-ixfp90n20x3m-datasheet?assetguid=006f1305-f7af-44eb-b713-23345c7030a4
IXFP90N20X3M
Виробник: IXYS
Description: MOSFET N-CH 200V 90A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 12.8mOhm @ 45A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
Supplier Device Package: TO-220 Isolated Tab
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5420 pF @ 25 V
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IXFH140N20X3 littelfuse-discrete-mosfets-ixf-140n20x3-datasheet?assetguid=d2c3adb4-1ffe-4768-b76e-d7d00e600842
IXFH140N20X3
Виробник: IXYS
Description: MOSFET N-CH 200V 140A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 70A, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7660 pF @ 25 V
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IXFQ140N20X3 littelfuse-discrete-mosfets-ixf-140n20x3-datasheet?assetguid=d2c3adb4-1ffe-4768-b76e-d7d00e600842
IXFQ140N20X3
Виробник: IXYS
Description: MOSFET N-CH 200V 140A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 70A, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7660 pF @ 25 V
на замовлення 28 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+994.49 грн
В кошику  од. на суму  грн.
IXFT140N20X3HV littelfuse-discrete-mosfets-ixf-140n20x3-datasheet?assetguid=d2c3adb4-1ffe-4768-b76e-d7d00e600842
IXFT140N20X3HV
Виробник: IXYS
Description: MOSFET N-CH 200V 140A TO268HV
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 70A, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-268HV (IXFT)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7660 pF @ 25 V
на замовлення 17 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1132.78 грн
В кошику  од. на суму  грн.
IXFN220N20X3 littelfuse-discrete-mosfets-ixfn220n20x3-datasheet?assetguid=7f9d048f-b652-432d-a9b0-e166f13b2193
IXFN220N20X3
Виробник: IXYS
Description: MOSFET N-CH 200V 160A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 110A, 10V
Power Dissipation (Max): 390W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 204 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 25 V
на замовлення 191 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2547.09 грн
10+1817.24 грн
100+1612.46 грн
В кошику  од. на суму  грн.
IXFK220N20X3 littelfuse-discrete-mosfets-ixf-220n20x3-datasheet?assetguid=6f4e90fe-6272-422e-a0c7-6b3f43b68d9b
IXFK220N20X3
Виробник: IXYS
Description: MOSFET N-CH 200V 220A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 220A (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 110A, 10V
Power Dissipation (Max): 960W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-264
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 204 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 25 V
на замовлення 247 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1053.28 грн
25+907.49 грн
100+865.15 грн
В кошику  од. на суму  грн.
IXFH220N20X3 littelfuse-discrete-mosfets-ixf-220n20x3-datasheet?assetguid=6f4e90fe-6272-422e-a0c7-6b3f43b68d9b
IXFH220N20X3
Виробник: IXYS
Description: MOSFET N-CH 200V 220A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 220A (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 110A, 10V
Power Dissipation (Max): 960W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 204 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 25 V
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IXFX300N20X3 littelfuse-discrete-mosfets-ixf-300n20x3-datasheet?assetguid=53bbefbe-ccd6-4511-b54f-ab0660bbdb90
IXFX300N20X3
Виробник: IXYS
Description: MOSFET N-CH 200V 300A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 150A, 10V
Power Dissipation (Max): 1250W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 8mA
Supplier Device Package: PLUS247™-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 375 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23800 pF @ 25 V
на замовлення 730 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2319.37 грн
30+1700.00 грн
120+1640.41 грн
В кошику  од. на суму  грн.
IXFN300N20X3 littelfuse-discrete-mosfets-ixfn300n20x3-datasheet?assetguid=51be43a2-5129-4449-8dce-f187571aa6ec
IXFN300N20X3
Виробник: IXYS
Description: MOSFET N-CH 200V 300A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 150A, 10V
Power Dissipation (Max): 695W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 375 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23800 pF @ 25 V
на замовлення 239 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+3280.74 грн
10+2376.68 грн
100+2208.48 грн
В кошику  од. на суму  грн.
IXFH72N30X3 littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_72n30x3_datasheet.pdf.pdf
IXFH72N30X3
Виробник: IXYS
Description: MOSFET N-CH 300V 72A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 36A, 10V
Power Dissipation (Max): 390W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 25 V
на замовлення 99 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+909.20 грн
10+750.26 грн
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IXFH100N30X3 littelfusediscretemosfetsnchannelultrajunctionixf100n30x3hvdatasheetpdf.pdf
IXFH100N30X3
Виробник: IXYS
Description: MOSFET N-CH 300V 100A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 50A, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7660 pF @ 25 V
на замовлення 304 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1069.84 грн
30+631.18 грн
120+543.71 грн
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IXFH120N30X3 DS100865AIXFTFH120N30X3HV.pdf
IXFH120N30X3
Виробник: IXYS
Description: MOSFET N-CH 300V 120A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 60A, 10V
Power Dissipation (Max): 735W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 25 V
на замовлення 5185 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1282.65 грн
30+768.73 грн
120+676.77 грн
В кошику  од. на суму  грн.
IXFP38N30X3M littelfuse-discrete-mosfets-ixfp38n30x3m-datasheet?assetguid=beda6aca-89ff-4274-bbc4-15cadd4140b0
IXFP38N30X3M
Виробник: IXYS
Description: MOSFET N-CH 300V 38A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Power Dissipation (Max): 34W (Tc)
Supplier Device Package: TO-220 Isolated Tab
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2440 pF @ 25 V
на замовлення 2174 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+352.75 грн
50+203.60 грн
100+202.21 грн
500+180.91 грн
1000+179.10 грн
В кошику  од. на суму  грн.
IXFP38N30X3 littelfuse-discrete-mosfets-ixf-38n30x3-datasheet?assetguid=bf5a0d57-37da-484a-a94b-aa873a26c7d4
IXFP38N30X3
Виробник: IXYS
Description: MOSFET N-CH 300V 38A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 19A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2240 pF @ 25 V
на замовлення 665 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+441.35 грн
50+200.81 грн
100+199.42 грн
500+178.81 грн
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CS19-12HO1S-TUB media?resourcetype=datasheets&itemid=87ae741a-fff5-4217-b553-69a020cd606c&filename=Littelfuse-Power-Semiconductors-CS19-12HO1S-Datasheet
CS19-12HO1S-TUB
Виробник: IXYS
Description: SCR 1200V 31A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 50 mA
Current - Gate Trigger (Igt) (Max): 28 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 180A, 195A
Current - On State (It (AV)) (Max): 20 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Voltage - On State (Vtm) (Max): 1.32 V
Current - Off State (Max): 50 µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Current - On State (It (RMS)) (Max): 31 A
Voltage - Off State: 1.2 kV
на замовлення 50 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+251.73 грн
50+192.06 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
DSP8-12AS-TUB Littelfuse-Power-Semiconductors-DSP8-12AS-Datasheet?assetguid=0a50aae9-2beb-4071-ac11-756d406726b3
DSP8-12AS-TUB
Виробник: IXYS
Description: DIODE ARRAY GP 1200V 8A TO263
Packaging: Tube
Package / Case: TO-263-4, D2PAK (3 Leads + Tab), TO-263AA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 8A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 16 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
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DSSK16-01AS-TUB
Виробник: IXYS
Description: DIODE ARRAY SCHOTTKY
Packaging: Tube
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DSSK28-0045BS-TUB
Виробник: IXYS
Description: DIODE ARRAY SCHOTTKY
Packaging: Tube
Operating Temperature - Junction: -55°C ~ 150°C
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DSSK28-01AS-TUB DSSK28-01AS.pdf
Виробник: IXYS
Description: DIODE ARRAY SCHOTTKY
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DSSK38-0025BS-TUB DSSK38-0025B.pdf
Виробник: IXYS
Description: DIODE ARRAY SCHOTTKY
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DSSK48-003BS-TUB DSSK48-003BS.pdf
DSSK48-003BS-TUB
Виробник: IXYS
Description: DIODE ARRAY SCHOTTKY
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 25A
Supplier Device Package: TO-263AA
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 40 A
Current - Reverse Leakage @ Vr: 20 mA @ 30 V
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IXBA16N170AHV littelfuse_discrete_igbts_bimosfet_ixb_16n170ahv_datasheet.pdf.pdf
IXBA16N170AHV
Виробник: IXYS
Description: REVERSE CONDUCTING IGBT
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 6V @ 15V, 10A
Supplier Device Package: TO-263HV
Td (on/off) @ 25°C: 15ns/250ns
Switching Energy: 2.5mJ (off)
Test Condition: 1360V, 10A, 10Ohm, 15V
Gate Charge: 65 nC
Part Status: Active
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 40 A
Power - Max: 150 W
на замовлення 25 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2279.63 грн
10+2024.32 грн
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IXBT16N170AHV littelfuse-discrete-igbts-ixb-16n170ahv-datasheet?assetguid=b3252f19-7d0e-4201-bbe6-5bf7c9acb58a
IXBT16N170AHV
Виробник: IXYS
Description: IGBT 1700V 16A TO-268HV
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 6V @ 15V, 10A
Supplier Device Package: TO-268HV (IXBT)
Td (on/off) @ 25°C: 15ns/250ns
Switching Energy: 2.5mJ (off)
Test Condition: 1360V, 10A, 10Ohm, 15V
Gate Charge: 65 nC
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 40 A
Power - Max: 150 W
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IXDA20N120AS-TUB littelfuse_discrete_igbts_npt_ixda20n120as_datasheet.pdf.pdf
Виробник: IXYS
Description: IGBT
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A
Supplier Device Package: TO-263AA
IGBT Type: NPT
Td (on/off) @ 25°C: 100ns/500ns
Switching Energy: 3.1mJ (on), 2.4mJ (off)
Test Condition: 600V, 20A, 82Ohm, 15V
Gate Charge: 70 nC
Part Status: Active
Current - Collector (Ic) (Max): 38 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 35 A
Power - Max: 200 W
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IXFA12N65X2 littelfuse-discrete-mosfets-ixf-12n65x2-datasheet?assetguid=ca7fb720-7825-4c0e-b2dd-7746de20884a
IXFA12N65X2
Виробник: IXYS
Description: MOSFET N-CH 650V 12A TO263AA
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 310mOhm @ 6A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263AA (IXFA)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 18.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1134 pF @ 25 V
на замовлення 213 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+378.42 грн
50+190.06 грн
100+173.25 грн
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IXFH150N25X3HV littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_150n25x3_datasheet.pdf.pdf
Виробник: IXYS
Description: MOSFET N-CH
Packaging: Tube
Vgs (Max): ±20V
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IXFH60N65X2-4 littelfuse-discrete-mosfets-ixfh60n65x2-4-datasheet?assetguid=73c34020-27de-40d3-8db0-a4119231366f
IXFH60N65X2-4
Виробник: IXYS
Description: MOSFET N-CH 650V 60A TO247-4L
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 30A, 10V
Power Dissipation (Max): 780W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-247-4L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 25 V
на замовлення 298 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1034.24 грн
30+608.24 грн
120+523.30 грн
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IXFN50N120SIC media?resourcetype=datasheets&itemid=33f7d771-ce0f-41aa-bfb2-afd78da82db4&filename=Littelfuse-Power-Semiconductors-IXFN50N120SiC-Datasheet
IXFN50N120SIC
Виробник: IXYS
Description: SICFET N-CH 1200V 47A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 40A, 20V
Vgs(th) (Max) @ Id: 2.4V @ 10mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 1000 V
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IXFN50N120SK media?resourcetype=datasheets&itemid=bd339330-b6b9-4c90-b751-d8293a8ae31c&filename=Littelfuse-Power-Semiconductors-IXFN50N120SK-Datasheet
IXFN50N120SK
Виробник: IXYS
Description: SICFET N-CH 1200V 48A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 40A, 20V
Vgs(th) (Max) @ Id: 2.8V @ 10mA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1895 pF @ 1000 V
на замовлення 17 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+5578.59 грн
10+4607.20 грн
В кошику  од. на суму  грн.
IXFP12N65X2 littelfuse-discrete-mosfets-ixf-12n65x2-datasheet?assetguid=ca7fb720-7825-4c0e-b2dd-7746de20884a
IXFP12N65X2
Виробник: IXYS
Description: MOSFET N-CH 650V 12A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 310mOhm @ 6A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 18.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1134 pF @ 25 V
на замовлення 161 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+361.86 грн
50+181.28 грн
100+165.10 грн
В кошику  од. на суму  грн.
IXFP22N65X2M littelfuse-discrete-mosfets-ixfp22n65x2m-datasheet?assetguid=1846557d-8386-447c-a978-b7259fcbc471
IXFP22N65X2M
Виробник: IXYS
Description: MOSFET N-CH 650V 22A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 11A, 10V
Power Dissipation (Max): 37W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1.5mA
Supplier Device Package: TO-220 Isolated Tab
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2190 pF @ 25 V
на замовлення 776 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+422.31 грн
50+214.56 грн
100+196.00 грн
500+153.43 грн
В кошику  од. на суму  грн.
IXFP34N65X2M littelfuse-discrete-mosfets-ixfp34n65x2m-datasheet?assetguid=3414df11-8c70-4e14-bf5d-9194b3534837
IXFP34N65X2M
Виробник: IXYS
Description: MOSFET N-CH 650V 34A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 17A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1.5mA
Supplier Device Package: TO-220 Isolated Tab
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3230 pF @ 25 V
на замовлення 450 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+617.73 грн
50+325.56 грн
100+299.59 грн
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IXFP8N65X2 littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_8n65x2_datasheet.pdf.pdf
IXFP8N65X2
Виробник: IXYS
Description: MOSFET N-CH 650V 8A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 4A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 25 V
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IXFT60N65X2HV littelfuse-discrete-mosfets-ixft60n65x2hv-datasheet?assetguid=3485acae-ba87-438d-bfcb-dacb7ee73cf2
IXFT60N65X2HV
Виробник: IXYS
Description: MOSFET N-CH 650V 60A TO268HV
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 30A, 10V
Power Dissipation (Max): 780W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-268HV (IXFT)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 25 V
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IXGA36N60A3 littelfuse-discrete-igbts-ixg-36n60a3-datasheet?assetguid=c23e0bfa-71be-4fc5-95ce-1a86be9b836e
IXGA36N60A3
Виробник: IXYS
Description: IGBT PT 600V TO-263AA
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 23 ns
Vce(on) (Max) @ Vge, Ic: 1.4V @ 15V, 30A
Supplier Device Package: TO-263AA
IGBT Type: PT
Td (on/off) @ 25°C: 18ns/330ns
Switching Energy: 740µJ (on), 3mJ (off)
Test Condition: 400V, 30A, 5Ohm, 15V
Gate Charge: 80 nC
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 220 W
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IXGH28N60A3 littelfuse_discrete_igbts_pt_ixg_28n60a3_datasheet.pdf.pdf
Виробник: IXYS
Description: IGBT
товару немає в наявності
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