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DPF60C300HB DPF60C300HB IXYS DPF60C300HB.pdf Description: DIODE ARRAY GP 300V 30A TO247AD
товар відсутній
DPF80C200HB DPF80C200HB IXYS DPF80C200HB.pdf Description: DIODE ARRAY GP 200V 40A TO247AD
товар відсутній
DPG10P400PJ DPG10P400PJ IXYS DPG10P400PJ.pdf Description: DIODE ARRAY 400V 10A ISOPLUS220
товар відсутній
DPG20C400PC DPG20C400PC IXYS DPG20C400PC.pdf Description: DIODE ARRAY GP 400V 10A TO263
товар відсутній
DPG30I400HA DPG30I400HA IXYS DPG30I400HA.pdf Description: DIODE GEN PURP 400V 30A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Capacitance @ Vr, F: 32pF @ 200V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.41 V @ 30 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
товар відсутній
DPG30IM300PC DPG30IM300PC IXYS DPG30IM300PC.pdf Description: DIODE GEN PURP 300V 30A TO263
товар відсутній
DPG30P300PJ DPG30P300PJ IXYS DPG30P300PJ.pdf Description: DIODE ARRAY 300V 30A ISOPLUS220
на замовлення 50 шт:
термін постачання 21-31 дні (днів)
1+371.8 грн
10+ 321.68 грн
DPG80C300HB DPG80C300HB IXYS DPG80C300HB.pdf Description: DIODE ARRAY GP 300V 40A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 40A
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.36 V @ 40 A
Current - Reverse Leakage @ Vr: 1 µA @ 300 V
на замовлення 1930 шт:
термін постачання 21-31 дні (днів)
1+527.49 грн
10+ 458.94 грн
100+ 379.97 грн
500+ 310.51 грн
1000+ 291.74 грн
DPG80C400HB DPG80C400HB IXYS DPG80C400HB.pdf Description: DIODE ARRAY GP 400V 40A TO247AD
товар відсутній
DSA10C150PB DSA10C150PB IXYS DSA10C150PB.pdf Description: DIODE ARRAY SCHOTTKY 150V TO220
товар відсутній
DSA120X150LB IXYS DSA120X150LB.pdf Description: DIODE ARRAY SCHOTTKY 150V SMPD
товар відсутній
DSA120X150LB-TRR DSA120X150LB-TRR IXYS DSA120X150LB.pdf Description: DIODE ARRAY SCHOTTKY 150V SMPD
Packaging: Tape & Reel (TR)
Package / Case: 9-SMD Module
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 75A
Supplier Device Package: ISOPLUS-SMPD™.B
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 60 A
Current - Reverse Leakage @ Vr: 1 mA @ 150 V
товар відсутній
DSA15IM200UC DSA15IM200UC IXYS DSA15IM200UC.pdf Description: DIODE SCHOTTKY 200V 15A TO252
товар відсутній
DSA240X150NA DSA240X150NA IXYS DSA240X150NA.pdf Description: DIODE MOD SCHOTT 150V SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 120A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 120 A
Current - Reverse Leakage @ Vr: 4 mA @ 150 V
товар відсутній
DSA240X200NA DSA240X200NA IXYS DSA240X200NA.pdf Description: DIODE MOD SCHOTT 200V SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 120A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 120 A
Current - Reverse Leakage @ Vr: 4 mA @ 200 V
товар відсутній
DSA300I100NA DSA300I100NA IXYS DSA300I100NA.pdf Description: DIODE SCHOTTKY 100V 300A SOT227B
товар відсутній
DSA300I200NA DSA300I200NA IXYS DSA300I200NA.pdf Description: DIODE SCHOTTKY 200V 300A SOT227B
товар відсутній
DSA300I45NA DSA300I45NA IXYS DSA300I45NA.pdf Description: DIODE SCHOTTKY 45V 300A SOT227B
товар відсутній
DSA30C200IB IXYS DSA30C200IB.pdf Description: DIODE ARRAY SCHOTTKY 200V TO262
товар відсутній
DSA30C45PC-TRL DSA30C45PC-TRL IXYS DSA30C45PC.pdf Description: DIODE ARRAY SCHOTTKY 45V TO263
товар відсутній
DSA60C150PB DSA60C150PB IXYS DSA60C150PB.pdf Description: DIODE ARR SCHOT 150V 30A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 30 A
Current - Reverse Leakage @ Vr: 450 µA @ 150 V
на замовлення 40 шт:
термін постачання 21-31 дні (днів)
2+188.39 грн
10+ 152.11 грн
Мінімальне замовлення: 2
DSA70C200HB DSA70C200HB IXYS DSA70C200HB.pdf Description: DIODE ARRAY SCHOTTKY 200V TO247
товар відсутній
DSA90C200HR DSA90C200HR IXYS DSA90C200HR.pdf Description: DIODE ARRAY SCHOTTKY 200V ISO247
на замовлення 60 шт:
термін постачання 21-31 дні (днів)
DSB60C30PB DSB60C30PB IXYS DSB60C30PB.pdf Description: DIODE ARRAY SCHOTTKY 30V TO220AB
товар відсутній
DSEC16-12AS DSEC16-12AS IXYS DSEC16-12AS.pdf Description: DIODE ARRAY GP 1200V 10A TO263AB
товар відсутній
DSEC16-12AS-TUB DSEC16-12AS-TUB IXYS DSEC16-12AS.pdf Description: DIODE ARRAY GP 1200V 10A TO263AB
товар відсутній
DSEI19-06AS-TUB DSEI19-06AS-TUB IXYS DSEI19-06AS.pdf Description: DIODE GEN PURP 600V 20A TO263AA
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263AA
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 16 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
товар відсутній
DSP8-08AS-TUB DSP8-08AS-TUB IXYS DSP8-08AS.pdf Description: DIODE ARRAY GP 800V 11A TO263
Packaging: Tube
Package / Case: TO-263-4, D²Pak (3 Leads + Tab), TO-263AA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 11A
Supplier Device Package: TO-263 (D²Pak)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 7 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
2+219.67 грн
Мінімальне замовлення: 2
DSS10-01AS-TUB DSS10-01AS-TUB IXYS DSS10-01AS_2021.pdf Description: DIODE SCHOTTKY 100V 10A TO263AA
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AA
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 10 A
Current - Reverse Leakage @ Vr: 300 µA @ 100 V
товар відсутній
DSS16-0045AS-TUB DSS16-0045AS-TUB IXYS Description: DIODE SCHOTTKY 45V 16A TO263AA
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-263AA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 670 mV @ 15 A
Current - Reverse Leakage @ Vr: 500 µA @ 45 V
товар відсутній
DSS16-01AS-TUB DSS16-01AS-TUB IXYS L137.pdf Description: DIODE SCHOTTKY 100V 16A TO263AB
товар відсутній
DSSK28-006BS-TRL DSSK28-006BS-TRL IXYS DSSK28-006BS.pdf Description: DIODE ARR SCHOTT 60V 15A TO263AA
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-263AA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 560 mV @ 15 A
Current - Reverse Leakage @ Vr: 10 mA @ 60 V
товар відсутній
FDM15-06KC5 IXYS littelfuse_discrete_mosfets_n-channel_super_junction_multi-chip_config_f__15-06kc5_datasheet.pdf.pdf Description: MOSFET N-CH 600V 15A I4PAC
Packaging: Tube
Package / Case: ISOPLUSi5-Pak™
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 12A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 790µA
Supplier Device Package: ISOPLUS i4-PAC™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 100 V
товар відсутній
FDM47-06KC5 IXYS littelfuse_discrete_mosfets_n-channel_super_junction_multi-chip_config_f__47-06kc5_datasheet.pdf.pdf Description: MOSFET N-CH 600V 47A I4PAC
Packaging: Tube
Package / Case: ISOPLUSi5-Pak™
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 44A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 3mA
Supplier Device Package: ISOPLUS i4-PAC™
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 100 V
товар відсутній
FMD15-06KC5 IXYS littelfuse_discrete_mosfets_n-channel_super_junction_multi-chip_config_f__15-06kc5_datasheet.pdf.pdf Description: MOSFET N-CH 600V 15A I4PAC
Packaging: Tube
Package / Case: ISOPLUSi5-Pak™
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 12A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 790µA
Supplier Device Package: ISOPLUS i4-PAC™
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 100 V
на замовлення 25 шт:
термін постачання 21-31 дні (днів)
1+1192.19 грн
10+ 1011.46 грн
FMD47-06KC5 IXYS littelfuse_discrete_mosfets_n-channel_super_junction_multi-chip_config_f__47-06kc5_datasheet.pdf.pdf Description: MOSFET N-CH 600V 47A I4PAC
Packaging: Tube
Package / Case: ISOPLUSi5-Pak™
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 44A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 3mA
Supplier Device Package: ISOPLUS i4-PAC™
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 100 V
товар відсутній
GMM3X100-01X1-SMD IXYS GMM3x100-01X1.pdf Description: MOSFET 6N-CH 100V 90A 24SMD
Packaging: Tube
Package / Case: 24-SMD, Gull Wing
Mounting Type: Surface Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 90A
Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: 24-SMD
Part Status: Active
товар відсутній
GMM3X100-01X1-SMDSAM IXYS GMM3x100-01X1.pdf Description: MOSFET 6N-CH 100V 90A 24SMD
Packaging: Tube
Package / Case: 24-SMD, Gull Wing
Mounting Type: Surface Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 90A
Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: 24-SMD
Part Status: Active
товар відсутній
GMM3X120-0075X2-SMDSAM IXYS GMM3x120-0075X2.pdf Description: MOSFET 6N-CH 75V 110A 24SMD
Packaging: Tube
Package / Case: 24-SMD, Gull Wing
Mounting Type: Surface Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 75V
Current - Continuous Drain (Id) @ 25°C: 110A
Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 24-SMD
Part Status: Active
товар відсутній
GMM3X160-0055X2-SMD IXYS GMM3x160-0055X2.pdf Description: MOSFET 6N-CH 55V 150A 24SMD
Packaging: Tube
Package / Case: 24-SMD, Gull Wing
Mounting Type: Surface Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 150A
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 24-SMD
товар відсутній
GMM3X160-0055X2-SMDSAM IXYS GMM3x160-0055X2.pdf Description: MOSFET 6N-CH 55V 150A 24SMD
Packaging: Tube
Package / Case: 24-SMD, Gull Wing
Mounting Type: Surface Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 150A
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 24-SMD
товар відсутній
GMM3X180-004X2-SMD IXYS GMM3x180-004X2.pdf Description: MOSFET 6N-CH 40V 180A 24SMD
Packaging: Tube
Package / Case: 24-SMD, Gull Wing
Mounting Type: Surface Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 180A
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: 24-SMD
товар відсутній
GMM3X180-004X2-SMDSAM IXYS GMM3x180-004X2.pdf Description: MOSFET 6N-CH 40V 180A 24SMD
Packaging: Tube
Package / Case: 24-SMD, Gull Wing
Mounting Type: Surface Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 180A
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: 24-SMD
товар відсутній
GMM3x60-015X2-SMD IXYS GMM3x60-015X2.pdf Description: MOSFET 6N-CH 150V 50A ISOPLUS
Packaging: Tube
Package / Case: ISOPLUS-DIL™
Mounting Type: Surface Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: 50A
Input Capacitance (Ciss) (Max) @ Vds: 5800pF @ 25V
Rds On (Max) @ Id, Vgs: 24mOhm @ 38A, 10V
Gate Charge (Qg) (Max) @ Vgs: 97nC @ 10V
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: ISOPLUS-DIL™
Part Status: Obsolete
товар відсутній
GMM3x60-015X2-SMDSAM IXYS GMM3x60-015X2.pdf Description: MOSFET 6N-CH 150V 50A ISOPLUS
Packaging: Tube
Package / Case: ISOPLUS-DIL™
Mounting Type: Surface Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: 50A
Input Capacitance (Ciss) (Max) @ Vds: 5800pF @ 25V
Rds On (Max) @ Id, Vgs: 24mOhm @ 38A, 10V
Gate Charge (Qg) (Max) @ Vgs: 97nC @ 10V
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: ISOPLUS-DIL™
Part Status: Active
товар відсутній
GUO40-08NO1 GUO40-08NO1 IXYS GUO40-08NO1.pdf Description: BRIDGE RECT 3PHASE 800V 40A GUFP
Packaging: Tube
Package / Case: 5-SIP
Mounting Type: Through Hole
Diode Type: Three Phase
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Standard
Supplier Device Package: GUFP
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 40 A
Voltage - Forward (Vf) (Max) @ If: 1.28 V @ 30 A
Current - Reverse Leakage @ Vr: 40 µA @ 800 V
на замовлення 105 шт:
термін постачання 21-31 дні (днів)
1+1332.95 грн
10+ 1141.05 грн
100+ 997.97 грн
GWM180-004X2-SL IXYS GWM180-004X2.pdf Description: MOSFET 6N-CH 40V 180A 17-SMD
товар відсутній
GWM180-004X2-SLSAM IXYS Description: MOSFET 6N-CH 40V 180A ISOPLUS
Packaging: Tube
Package / Case: 17-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 180A
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 100A, 10V
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: ISOPLUS-DIL™
товар відсутній
GWM180-004X2-SMD IXYS GWM180-004X2.pdf Description: MOSFET 6N-CH 40V 180A 17-SMD
товар відсутній
GWM180-004X2-SMDSAM IXYS Description: MOSFET 6N-CH 40V 180A 17-SMD
товар відсутній
IXA12IF1200HB IXA12IF1200HB IXYS littelfuse_discrete_igbts_xpt_ixa12if1200hb_datasheet.pdf.pdf Description: IGBT 1200V 20A 85W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 350 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 10A
Supplier Device Package: TO-247AD
IGBT Type: PT
Switching Energy: 1.1mJ (on), 1.1mJ (off)
Test Condition: 600V, 10A, 100Ohm, 15V
Gate Charge: 27 nC
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 85 W
на замовлення 438 шт:
термін постачання 21-31 дні (днів)
1+334.12 грн
30+ 255.19 грн
120+ 218.73 грн
IXA12IF1200PB IXA12IF1200PB IXYS littelfuse_discrete_igbts_xpt_ixa12if1200pb_datasheet.pdf.pdf Description: IGBT PT 1200V 20A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 350 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 10A
Supplier Device Package: TO-220-3
IGBT Type: PT
Switching Energy: 1.1mJ (on), 1.1mJ (off)
Test Condition: 600V, 10A, 100Ohm, 15V
Gate Charge: 27 nC
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 85 W
товар відсутній
IXA12IF1200TC-TUB IXA12IF1200TC-TUB IXYS littelfuse_discrete_igbts_xpt_ixa12if1200tc_datasheet.pdf.pdf Description: IGBT PT 1200V 20A TO268AA
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 350 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 10A
Supplier Device Package: TO-268AA
IGBT Type: PT
Switching Energy: 1.1mJ (on), 1.1mJ (off)
Test Condition: 600V, 10A, 100Ohm, 15V
Gate Charge: 27 nC
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 85 W
на замовлення 1560 шт:
термін постачання 21-31 дні (днів)
300+285.89 грн
Мінімальне замовлення: 300
IXA17IF1200HJ IXA17IF1200HJ IXYS littelfuse_discrete_igbts_xpt_ixa17if1200hj_datasheet.pdf.pdf Description: IGBT 1200V 28A 100W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 350 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
Supplier Device Package: ISOPLUS247™
IGBT Type: PT
Switching Energy: 1.55mJ (on), 1.7mJ (off)
Test Condition: 600V, 15A, 56Ohm, 15V
Gate Charge: 47 nC
Part Status: Active
Current - Collector (Ic) (Max): 28 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 100 W
товар відсутній
IXA20I1200PB IXA20I1200PB IXYS littelfuse_discrete_igbts_xpt_ixa20i1200pb_datasheet.pdf.pdf Description: IGBT PT 1200V 38A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
Supplier Device Package: TO-220-3
IGBT Type: PT
Switching Energy: 1.65mJ (on), 1.7mJ (off)
Test Condition: 600V, 15A, 56Ohm, 15V
Gate Charge: 47 nC
Current - Collector (Ic) (Max): 38 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 165 W
на замовлення 300 шт:
термін постачання 21-31 дні (днів)
1+342.66 грн
50+ 261.45 грн
100+ 224.1 грн
IXA20IF1200HB IXA20IF1200HB IXYS littelfuse_discrete_igbts_xpt_ixa20if1200hb_datasheet.pdf.pdf Description: IGBT 1200V 38A 165W TO247
товар відсутній
IXA20PG1200DHG-TUB IXYS littelfuse_discrete_igbts_smpd_packages_ixa20pg1200dhglb_datasheet.pdf.pdf Description: IGBT H BRIDGE 1200V 32A SMPD
товар відсутній
IXA20PG1200DHG-TRR IXYS littelfuse_discrete_igbts_smpd_packages_ixa20pg1200dhglb_datasheet.pdf.pdf Description: IGBT H BRIDGE 1200V 32A SMPD
товар відсутній
IXA20RG1200DHGLB IXYS IXA20RG1200DHGLB.pdf Description: IGBT 1200V 32A 125W SMPD
товар відсутній
IXA20RG1200DHGLB-TRR IXYS IXA20RG1200DHGLB.pdf Description: IGBT 1200V 32A 125W SMPD
товар відсутній
DPF60C300HB DPF60C300HB.pdf
DPF60C300HB
Виробник: IXYS
Description: DIODE ARRAY GP 300V 30A TO247AD
товар відсутній
DPF80C200HB DPF80C200HB.pdf
DPF80C200HB
Виробник: IXYS
Description: DIODE ARRAY GP 200V 40A TO247AD
товар відсутній
DPG10P400PJ DPG10P400PJ.pdf
DPG10P400PJ
Виробник: IXYS
Description: DIODE ARRAY 400V 10A ISOPLUS220
товар відсутній
DPG20C400PC DPG20C400PC.pdf
DPG20C400PC
Виробник: IXYS
Description: DIODE ARRAY GP 400V 10A TO263
товар відсутній
DPG30I400HA DPG30I400HA.pdf
DPG30I400HA
Виробник: IXYS
Description: DIODE GEN PURP 400V 30A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Capacitance @ Vr, F: 32pF @ 200V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.41 V @ 30 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
товар відсутній
DPG30IM300PC DPG30IM300PC.pdf
DPG30IM300PC
Виробник: IXYS
Description: DIODE GEN PURP 300V 30A TO263
товар відсутній
DPG30P300PJ DPG30P300PJ.pdf
DPG30P300PJ
Виробник: IXYS
Description: DIODE ARRAY 300V 30A ISOPLUS220
на замовлення 50 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+371.8 грн
10+ 321.68 грн
DPG80C300HB DPG80C300HB.pdf
DPG80C300HB
Виробник: IXYS
Description: DIODE ARRAY GP 300V 40A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 40A
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.36 V @ 40 A
Current - Reverse Leakage @ Vr: 1 µA @ 300 V
на замовлення 1930 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+527.49 грн
10+ 458.94 грн
100+ 379.97 грн
500+ 310.51 грн
1000+ 291.74 грн
DPG80C400HB DPG80C400HB.pdf
DPG80C400HB
Виробник: IXYS
Description: DIODE ARRAY GP 400V 40A TO247AD
товар відсутній
DSA10C150PB DSA10C150PB.pdf
DSA10C150PB
Виробник: IXYS
Description: DIODE ARRAY SCHOTTKY 150V TO220
товар відсутній
DSA120X150LB DSA120X150LB.pdf
Виробник: IXYS
Description: DIODE ARRAY SCHOTTKY 150V SMPD
товар відсутній
DSA120X150LB-TRR DSA120X150LB.pdf
DSA120X150LB-TRR
Виробник: IXYS
Description: DIODE ARRAY SCHOTTKY 150V SMPD
Packaging: Tape & Reel (TR)
Package / Case: 9-SMD Module
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 75A
Supplier Device Package: ISOPLUS-SMPD™.B
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 60 A
Current - Reverse Leakage @ Vr: 1 mA @ 150 V
товар відсутній
DSA15IM200UC DSA15IM200UC.pdf
DSA15IM200UC
Виробник: IXYS
Description: DIODE SCHOTTKY 200V 15A TO252
товар відсутній
DSA240X150NA DSA240X150NA.pdf
DSA240X150NA
Виробник: IXYS
Description: DIODE MOD SCHOTT 150V SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 120A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 120 A
Current - Reverse Leakage @ Vr: 4 mA @ 150 V
товар відсутній
DSA240X200NA DSA240X200NA.pdf
DSA240X200NA
Виробник: IXYS
Description: DIODE MOD SCHOTT 200V SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 120A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 120 A
Current - Reverse Leakage @ Vr: 4 mA @ 200 V
товар відсутній
DSA300I100NA DSA300I100NA.pdf
DSA300I100NA
Виробник: IXYS
Description: DIODE SCHOTTKY 100V 300A SOT227B
товар відсутній
DSA300I200NA DSA300I200NA.pdf
DSA300I200NA
Виробник: IXYS
Description: DIODE SCHOTTKY 200V 300A SOT227B
товар відсутній
DSA300I45NA DSA300I45NA.pdf
DSA300I45NA
Виробник: IXYS
Description: DIODE SCHOTTKY 45V 300A SOT227B
товар відсутній
DSA30C200IB DSA30C200IB.pdf
Виробник: IXYS
Description: DIODE ARRAY SCHOTTKY 200V TO262
товар відсутній
DSA30C45PC-TRL DSA30C45PC.pdf
DSA30C45PC-TRL
Виробник: IXYS
Description: DIODE ARRAY SCHOTTKY 45V TO263
товар відсутній
DSA60C150PB DSA60C150PB.pdf
DSA60C150PB
Виробник: IXYS
Description: DIODE ARR SCHOT 150V 30A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 30 A
Current - Reverse Leakage @ Vr: 450 µA @ 150 V
на замовлення 40 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+188.39 грн
10+ 152.11 грн
Мінімальне замовлення: 2
DSA70C200HB DSA70C200HB.pdf
DSA70C200HB
Виробник: IXYS
Description: DIODE ARRAY SCHOTTKY 200V TO247
товар відсутній
DSA90C200HR DSA90C200HR.pdf
DSA90C200HR
Виробник: IXYS
Description: DIODE ARRAY SCHOTTKY 200V ISO247
на замовлення 60 шт:
термін постачання 21-31 дні (днів)
DSB60C30PB DSB60C30PB.pdf
DSB60C30PB
Виробник: IXYS
Description: DIODE ARRAY SCHOTTKY 30V TO220AB
товар відсутній
DSEC16-12AS DSEC16-12AS.pdf
DSEC16-12AS
Виробник: IXYS
Description: DIODE ARRAY GP 1200V 10A TO263AB
товар відсутній
DSEC16-12AS-TUB DSEC16-12AS.pdf
DSEC16-12AS-TUB
Виробник: IXYS
Description: DIODE ARRAY GP 1200V 10A TO263AB
товар відсутній
DSEI19-06AS-TUB DSEI19-06AS.pdf
DSEI19-06AS-TUB
Виробник: IXYS
Description: DIODE GEN PURP 600V 20A TO263AA
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263AA
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 16 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
товар відсутній
DSP8-08AS-TUB DSP8-08AS.pdf
DSP8-08AS-TUB
Виробник: IXYS
Description: DIODE ARRAY GP 800V 11A TO263
Packaging: Tube
Package / Case: TO-263-4, D²Pak (3 Leads + Tab), TO-263AA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 11A
Supplier Device Package: TO-263 (D²Pak)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 7 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+219.67 грн
Мінімальне замовлення: 2
DSS10-01AS-TUB DSS10-01AS_2021.pdf
DSS10-01AS-TUB
Виробник: IXYS
Description: DIODE SCHOTTKY 100V 10A TO263AA
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AA
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 10 A
Current - Reverse Leakage @ Vr: 300 µA @ 100 V
товар відсутній
DSS16-0045AS-TUB
DSS16-0045AS-TUB
Виробник: IXYS
Description: DIODE SCHOTTKY 45V 16A TO263AA
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-263AA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 670 mV @ 15 A
Current - Reverse Leakage @ Vr: 500 µA @ 45 V
товар відсутній
DSS16-01AS-TUB L137.pdf
DSS16-01AS-TUB
Виробник: IXYS
Description: DIODE SCHOTTKY 100V 16A TO263AB
товар відсутній
DSSK28-006BS-TRL DSSK28-006BS.pdf
DSSK28-006BS-TRL
Виробник: IXYS
Description: DIODE ARR SCHOTT 60V 15A TO263AA
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-263AA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 560 mV @ 15 A
Current - Reverse Leakage @ Vr: 10 mA @ 60 V
товар відсутній
FDM15-06KC5 littelfuse_discrete_mosfets_n-channel_super_junction_multi-chip_config_f__15-06kc5_datasheet.pdf.pdf
Виробник: IXYS
Description: MOSFET N-CH 600V 15A I4PAC
Packaging: Tube
Package / Case: ISOPLUSi5-Pak™
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 12A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 790µA
Supplier Device Package: ISOPLUS i4-PAC™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 100 V
товар відсутній
FDM47-06KC5 littelfuse_discrete_mosfets_n-channel_super_junction_multi-chip_config_f__47-06kc5_datasheet.pdf.pdf
Виробник: IXYS
Description: MOSFET N-CH 600V 47A I4PAC
Packaging: Tube
Package / Case: ISOPLUSi5-Pak™
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 44A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 3mA
Supplier Device Package: ISOPLUS i4-PAC™
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 100 V
товар відсутній
FMD15-06KC5 littelfuse_discrete_mosfets_n-channel_super_junction_multi-chip_config_f__15-06kc5_datasheet.pdf.pdf
Виробник: IXYS
Description: MOSFET N-CH 600V 15A I4PAC
Packaging: Tube
Package / Case: ISOPLUSi5-Pak™
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 12A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 790µA
Supplier Device Package: ISOPLUS i4-PAC™
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 100 V
на замовлення 25 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+1192.19 грн
10+ 1011.46 грн
FMD47-06KC5 littelfuse_discrete_mosfets_n-channel_super_junction_multi-chip_config_f__47-06kc5_datasheet.pdf.pdf
Виробник: IXYS
Description: MOSFET N-CH 600V 47A I4PAC
Packaging: Tube
Package / Case: ISOPLUSi5-Pak™
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 44A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 3mA
Supplier Device Package: ISOPLUS i4-PAC™
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 100 V
товар відсутній
GMM3X100-01X1-SMD GMM3x100-01X1.pdf
Виробник: IXYS
Description: MOSFET 6N-CH 100V 90A 24SMD
Packaging: Tube
Package / Case: 24-SMD, Gull Wing
Mounting Type: Surface Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 90A
Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: 24-SMD
Part Status: Active
товар відсутній
GMM3X100-01X1-SMDSAM GMM3x100-01X1.pdf
Виробник: IXYS
Description: MOSFET 6N-CH 100V 90A 24SMD
Packaging: Tube
Package / Case: 24-SMD, Gull Wing
Mounting Type: Surface Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 90A
Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: 24-SMD
Part Status: Active
товар відсутній
GMM3X120-0075X2-SMDSAM GMM3x120-0075X2.pdf
Виробник: IXYS
Description: MOSFET 6N-CH 75V 110A 24SMD
Packaging: Tube
Package / Case: 24-SMD, Gull Wing
Mounting Type: Surface Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 75V
Current - Continuous Drain (Id) @ 25°C: 110A
Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 24-SMD
Part Status: Active
товар відсутній
GMM3X160-0055X2-SMD GMM3x160-0055X2.pdf
Виробник: IXYS
Description: MOSFET 6N-CH 55V 150A 24SMD
Packaging: Tube
Package / Case: 24-SMD, Gull Wing
Mounting Type: Surface Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 150A
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 24-SMD
товар відсутній
GMM3X160-0055X2-SMDSAM GMM3x160-0055X2.pdf
Виробник: IXYS
Description: MOSFET 6N-CH 55V 150A 24SMD
Packaging: Tube
Package / Case: 24-SMD, Gull Wing
Mounting Type: Surface Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 150A
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 24-SMD
товар відсутній
GMM3X180-004X2-SMD GMM3x180-004X2.pdf
Виробник: IXYS
Description: MOSFET 6N-CH 40V 180A 24SMD
Packaging: Tube
Package / Case: 24-SMD, Gull Wing
Mounting Type: Surface Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 180A
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: 24-SMD
товар відсутній
GMM3X180-004X2-SMDSAM GMM3x180-004X2.pdf
Виробник: IXYS
Description: MOSFET 6N-CH 40V 180A 24SMD
Packaging: Tube
Package / Case: 24-SMD, Gull Wing
Mounting Type: Surface Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 180A
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: 24-SMD
товар відсутній
GMM3x60-015X2-SMD GMM3x60-015X2.pdf
Виробник: IXYS
Description: MOSFET 6N-CH 150V 50A ISOPLUS
Packaging: Tube
Package / Case: ISOPLUS-DIL™
Mounting Type: Surface Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: 50A
Input Capacitance (Ciss) (Max) @ Vds: 5800pF @ 25V
Rds On (Max) @ Id, Vgs: 24mOhm @ 38A, 10V
Gate Charge (Qg) (Max) @ Vgs: 97nC @ 10V
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: ISOPLUS-DIL™
Part Status: Obsolete
товар відсутній
GMM3x60-015X2-SMDSAM GMM3x60-015X2.pdf
Виробник: IXYS
Description: MOSFET 6N-CH 150V 50A ISOPLUS
Packaging: Tube
Package / Case: ISOPLUS-DIL™
Mounting Type: Surface Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: 50A
Input Capacitance (Ciss) (Max) @ Vds: 5800pF @ 25V
Rds On (Max) @ Id, Vgs: 24mOhm @ 38A, 10V
Gate Charge (Qg) (Max) @ Vgs: 97nC @ 10V
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: ISOPLUS-DIL™
Part Status: Active
товар відсутній
GUO40-08NO1 GUO40-08NO1.pdf
GUO40-08NO1
Виробник: IXYS
Description: BRIDGE RECT 3PHASE 800V 40A GUFP
Packaging: Tube
Package / Case: 5-SIP
Mounting Type: Through Hole
Diode Type: Three Phase
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Standard
Supplier Device Package: GUFP
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 40 A
Voltage - Forward (Vf) (Max) @ If: 1.28 V @ 30 A
Current - Reverse Leakage @ Vr: 40 µA @ 800 V
на замовлення 105 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+1332.95 грн
10+ 1141.05 грн
100+ 997.97 грн
GWM180-004X2-SL GWM180-004X2.pdf
Виробник: IXYS
Description: MOSFET 6N-CH 40V 180A 17-SMD
товар відсутній
GWM180-004X2-SLSAM
Виробник: IXYS
Description: MOSFET 6N-CH 40V 180A ISOPLUS
Packaging: Tube
Package / Case: 17-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 180A
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 100A, 10V
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: ISOPLUS-DIL™
товар відсутній
GWM180-004X2-SMD GWM180-004X2.pdf
Виробник: IXYS
Description: MOSFET 6N-CH 40V 180A 17-SMD
товар відсутній
GWM180-004X2-SMDSAM
Виробник: IXYS
Description: MOSFET 6N-CH 40V 180A 17-SMD
товар відсутній
IXA12IF1200HB littelfuse_discrete_igbts_xpt_ixa12if1200hb_datasheet.pdf.pdf
IXA12IF1200HB
Виробник: IXYS
Description: IGBT 1200V 20A 85W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 350 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 10A
Supplier Device Package: TO-247AD
IGBT Type: PT
Switching Energy: 1.1mJ (on), 1.1mJ (off)
Test Condition: 600V, 10A, 100Ohm, 15V
Gate Charge: 27 nC
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 85 W
на замовлення 438 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+334.12 грн
30+ 255.19 грн
120+ 218.73 грн
IXA12IF1200PB littelfuse_discrete_igbts_xpt_ixa12if1200pb_datasheet.pdf.pdf
IXA12IF1200PB
Виробник: IXYS
Description: IGBT PT 1200V 20A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 350 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 10A
Supplier Device Package: TO-220-3
IGBT Type: PT
Switching Energy: 1.1mJ (on), 1.1mJ (off)
Test Condition: 600V, 10A, 100Ohm, 15V
Gate Charge: 27 nC
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 85 W
товар відсутній
IXA12IF1200TC-TUB littelfuse_discrete_igbts_xpt_ixa12if1200tc_datasheet.pdf.pdf
IXA12IF1200TC-TUB
Виробник: IXYS
Description: IGBT PT 1200V 20A TO268AA
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 350 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 10A
Supplier Device Package: TO-268AA
IGBT Type: PT
Switching Energy: 1.1mJ (on), 1.1mJ (off)
Test Condition: 600V, 10A, 100Ohm, 15V
Gate Charge: 27 nC
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 85 W
на замовлення 1560 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
300+285.89 грн
Мінімальне замовлення: 300
IXA17IF1200HJ littelfuse_discrete_igbts_xpt_ixa17if1200hj_datasheet.pdf.pdf
IXA17IF1200HJ
Виробник: IXYS
Description: IGBT 1200V 28A 100W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 350 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
Supplier Device Package: ISOPLUS247™
IGBT Type: PT
Switching Energy: 1.55mJ (on), 1.7mJ (off)
Test Condition: 600V, 15A, 56Ohm, 15V
Gate Charge: 47 nC
Part Status: Active
Current - Collector (Ic) (Max): 28 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 100 W
товар відсутній
IXA20I1200PB littelfuse_discrete_igbts_xpt_ixa20i1200pb_datasheet.pdf.pdf
IXA20I1200PB
Виробник: IXYS
Description: IGBT PT 1200V 38A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
Supplier Device Package: TO-220-3
IGBT Type: PT
Switching Energy: 1.65mJ (on), 1.7mJ (off)
Test Condition: 600V, 15A, 56Ohm, 15V
Gate Charge: 47 nC
Current - Collector (Ic) (Max): 38 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 165 W
на замовлення 300 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+342.66 грн
50+ 261.45 грн
100+ 224.1 грн
IXA20IF1200HB littelfuse_discrete_igbts_xpt_ixa20if1200hb_datasheet.pdf.pdf
IXA20IF1200HB
Виробник: IXYS
Description: IGBT 1200V 38A 165W TO247
товар відсутній
IXA20PG1200DHG-TUB littelfuse_discrete_igbts_smpd_packages_ixa20pg1200dhglb_datasheet.pdf.pdf
Виробник: IXYS
Description: IGBT H BRIDGE 1200V 32A SMPD
товар відсутній
IXA20PG1200DHG-TRR littelfuse_discrete_igbts_smpd_packages_ixa20pg1200dhglb_datasheet.pdf.pdf
Виробник: IXYS
Description: IGBT H BRIDGE 1200V 32A SMPD
товар відсутній
IXA20RG1200DHGLB IXA20RG1200DHGLB.pdf
Виробник: IXYS
Description: IGBT 1200V 32A 125W SMPD
товар відсутній
IXA20RG1200DHGLB-TRR IXA20RG1200DHGLB.pdf
Виробник: IXYS
Description: IGBT 1200V 32A 125W SMPD
товар відсутній
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