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IXTD1R4N60P 11 IXYS Description: MOSFET N-CH 600V 1.4A DIE
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T-TD1R4N60P 11 IXYS Description: MOSFET N-CH 600V
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IXFM10N90 IXYS Description: MOSFET N-CH 900V 10A TO204AA
Packaging: Tube
Package / Case: TO-204AA, TO-3
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 5A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-204AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V
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IXFM11N80 IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixfh13n80_datasheet.pdf.pdf Description: MOSFET N-CH 800V 11A TO204AA
Packaging: Tube
Package / Case: TO-204AA, TO-3
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 5.5A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-204AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V
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IXFM42N20 IXYS littelfuse-discrete-mosfets-ixfh50n20-datasheet?assetguid=fabf9ac5-d2db-4c2d-87fd-77971009cfca Description: MOSFET N-CH 200V 42A TO204AE
Packaging: Tube
Package / Case: TO-204AE
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 21A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 4mA
Supplier Device Package: TO-204AE
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 25 V
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IXTM10P60 IXYS Description: POWER MOSFET TO-3
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IXTM11N80 IXYS Description: MOSFET N-CH 800V 11A TO204AA
Packaging: Tube
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 5.5A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-204AA (IXTM)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
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IXTM12N100 IXYS Description: MOSFET N-CH 1000V 12A TO204AA
Packaging: Tube
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 6A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-204AA (IXTM)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V
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IXTM21N50L IXYS Description: POWER MOSFET TO-3
Packaging: Tube
Part Status: Obsolete
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IXTM24N50L IXYS Description: POWER MOSFET TO-3
Packaging: Tube
Part Status: Obsolete
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IXTM40N30 IXYS littelfuse_discrete_mosfets_n-channel_standard_ixth40n30_datasheet.pdf.pdf Description: MOSFET N-CH 300V 40A TO204AE
Packaging: Tube
Package / Case: TO-204AE
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 88mOhm @ 20A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-204AE
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 25 V
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IXTM50N20 IXYS littelfuse_discrete_mosfets_n-channel_standard_ixth50n20_datasheet.pdf.pdf Description: MOSFET N-CH 200V 50A TO204AE
Packaging: Tube
Package / Case: TO-204AE
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 25A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-204AE
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 25 V
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IXFP12N65X2M IXFP12N65X2M IXYS littelfuse-discrete-mosfets-ixfp12n65x2m-datasheet?assetguid=c1c8d93a-0436-4ab9-8017-976e24f2421b Description: MOSFET N-CH 650V 12A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 310mOhm @ 6A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220 Isolated Tab
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 18.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1134 pF @ 25 V
на замовлення 777 шт:
термін постачання 21-31 дні (днів)
1+360.87 грн
50+180.88 грн
100+164.78 грн
500+128.18 грн
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IXTD2N60P-1J IXYS Description: MOSFET N-CH 600V 2A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 5.1Ohm @ 1A, 10V
Power Dissipation (Max): 56W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: Die
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 25 V
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IXTD3N60P-2J IXYS Description: MOSFET N-CH 600V 3A DIE
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MIXA100PF1200TMH IXYS Description: MOD IGBT LEG DIODE NTC
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IXFN52N100X IXFN52N100X IXYS Viewer.aspx?p=http%3a%2f%2fixapps.ixys.com%2fDataSheet%2fDS100911B(IXFN52N100X).pdf Description: MOSFET N-CH 1000V 44A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 26A, 10V
Power Dissipation (Max): 830W (Tc)
Vgs(th) (Max) @ Id: 6V @ 4mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 245 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6725 pF @ 25 V
на замовлення 149 шт:
термін постачання 21-31 дні (днів)
1+4565.21 грн
10+4101.31 грн
100+3561.00 грн
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SM232K10L SM232K10L IXYS SM232K10L.pdf Description: MONOCRYST SOLAR CELL 5.07W 6.91V
на замовлення 8 шт:
термін постачання 21-31 дні (днів)
1+6473.36 грн
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IXFN74N100X IXFN74N100X IXYS IXFN74N100X.pdf Description: MOSFET N-CH 1000V 74A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 74A (Tc)
Rds On (Max) @ Id, Vgs: 66mOhm @ 37A, 10V
Power Dissipation (Max): 1170W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 425 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17000 pF @ 25 V
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IXTH130N15X4 IXTH130N15X4 IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixt_130n15x4_datasheet.pdf.pdf Description: MOSFET N-CH 150V 130A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 70A, 10V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4770 pF @ 25 V
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IXTP130N15X4 IXTP130N15X4 IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixt_130n15x4_datasheet.pdf.pdf Description: MOSFET N-CH 150V 130A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 70A, 10V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4770 pF @ 25 V
на замовлення 1446 шт:
термін постачання 21-31 дні (днів)
1+507.52 грн
50+389.85 грн
100+348.82 грн
500+288.84 грн
1000+259.96 грн
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M0955JK250 IXYS Description: DIODE STANDARD 2500V 1105A W113
Packaging: Box
Package / Case: DO-200AB, B-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3.4 µs
Technology: Standard
Current - Average Rectified (Io): 1105A
Supplier Device Package: W113
Voltage - DC Reverse (Vr) (Max): 2500 V
Voltage - Forward (Vf) (Max) @ If: 1.44 V @ 1000 A
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N3597ML020 IXYS Description: SCR 200V 7030A WP5
Packaging: Box
Package / Case: TO-200AC, K-PUK
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 140°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 50000A @ 50Hz
Current - On State (It (AV)) (Max): 3597 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 1.53 V
Current - Off State (Max): 100 mA
Supplier Device Package: WP5
Part Status: Discontinued at Digi-Key
Current - On State (It (RMS)) (Max): 7030 A
Voltage - Off State: 200 V
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A1237NC280 IXYS Description: SCR 2.8KV 2555A W11
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K0500LC600 IXYS Description: SCR 6KV 975A W10
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N5415EA360 IXYS Description: PHASE CONTROL THYRISTOR
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N2418ZD360 IXYS Description: SCR 3.6KV W46
Packaging: Box
Package / Case: TO-200AF
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Current - Non Rep. Surge 50, 60Hz (Itsm): 30000A @ 50Hz
Current - On State (It (AV)) (Max): 2418 A
Supplier Device Package: W46
Voltage - Off State: 3.6 kV
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N3597ML060 IXYS Description: SCR 600V 7030A WP5
Packaging: Box
Package / Case: TO-200AC, K-PUK
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 140°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 50000A @ 50Hz
Current - On State (It (AV)) (Max): 3597 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 1.53 V
Current - Off State (Max): 100 mA
Supplier Device Package: WP5
Part Status: Discontinued at Digi-Key
Current - On State (It (RMS)) (Max): 7030 A
Voltage - Off State: 600 V
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N4165EE420 IXYS Description: SCR 4.2KV W108
Packaging: Box
Package / Case: TO-200AF
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Current - Non Rep. Surge 50, 60Hz (Itsm): 56000A @ 50Hz
Current - On State (It (AV)) (Max): 4165 A
Supplier Device Package: W108
Part Status: Discontinued at Digi-Key
Voltage - Off State: 4.2 kV
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N1174JK200 IXYS Description: SCR 2KV 2313A WP1
Packaging: Box
Package / Case: TO-200AB, B-PuK
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 14500A @ 50Hz
Current - On State (It (AV)) (Max): 1174 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 2.46 V
Current - Off State (Max): 100 mA
Supplier Device Package: WP1
Current - On State (It (RMS)) (Max): 2313 A
Voltage - Off State: 2 kV
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W3090HA600 IXYS Description: RECTIFIER DIODE
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K4005EA520 IXYS Description: SCR 5.2KV W107
Packaging: Box
Package / Case: TO-200AF
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Current - Non Rep. Surge 50, 60Hz (Itsm): 43200A @ 50Hz
Current - On State (It (AV)) (Max): 4005 A
Supplier Device Package: W107
Part Status: Discontinued at Digi-Key
Voltage - Off State: 5.2 kV
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K1010MA650 IXYS Description: PHASE CONTROL THYRISTOR
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P0848YC06C IXYS media?resourcetype=datasheets&amp;itemid=b736798f-6ed6-493c-99be-c2f861cff4f6&amp;filename=littelfuse_discrete_thyristors_fast_thyristors_p0848yc0___datasheet.pdf Description: SCR 600V 1713A W58
Packaging: Box
Package / Case: TO-200AB, B-PuK
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 9625A @ 50Hz
Current - On State (It (AV)) (Max): 848 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 1.47 V
Current - Off State (Max): 50 mA
Supplier Device Package: W58
Current - On State (It (RMS)) (Max): 1713 A
Voltage - Off State: 600 V
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W6262ZC200 IXYS Description: DIODE STANDARD 2000V 6262A W7
Packaging: Box
Package / Case: DO-200AE
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 6262A
Supplier Device Package: W7
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 2000 V
Voltage - Forward (Vf) (Max) @ If: 1.18 V @ 6800 A
Current - Reverse Leakage @ Vr: 150 mA @ 2000 V
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P0848YC04C IXYS media?resourcetype=datasheets&amp;itemid=b736798f-6ed6-493c-99be-c2f861cff4f6&amp;filename=littelfuse_discrete_thyristors_fast_thyristors_p0848yc0___datasheet.pdf Description: SCR 400V 1713A W58
Packaging: Box
Package / Case: TO-200AB, B-PuK
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 9625A @ 50Hz
Current - On State (It (AV)) (Max): 848 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 1.47 V
Current - Off State (Max): 50 mA
Supplier Device Package: W58
Current - On State (It (RMS)) (Max): 1713 A
Voltage - Off State: 400 V
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K4005EA480 IXYS Description: SCR 4.8KV W107
Packaging: Box
Package / Case: TO-200AF
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Current - Non Rep. Surge 50, 60Hz (Itsm): 43200A @ 50Hz
Current - On State (It (AV)) (Max): 4005 A
Supplier Device Package: W107
Part Status: Discontinued at Digi-Key
Voltage - Off State: 4.8 kV
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N3597ML040 IXYS media?resourcetype=datasheets&amp;itemid=c9853d53-1646-4292-a3e7-bcf7cec017d2&amp;filename=littelfuse_discrete_thyristors_phase_control_n3597ml0_0_datasheet.pdf Description: SCR 400V 7030A WP5
Packaging: Box
Package / Case: TO-200AC, K-PUK
Mounting Type: Clamp On
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 140°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 50000A @ 50Hz
Current - On State (It (AV)) (Max): 3597 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 1.53 V
Current - Off State (Max): 100 mA
Supplier Device Package: WP5
Part Status: Discontinued at Digi-Key
Current - On State (It (RMS)) (Max): 7030 A
Voltage - Off State: 400 V
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W6262ZC240 IXYS Description: DIODE STANDARD 2400V 6262A W7
Packaging: Box
Package / Case: DO-200AE
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 6262A
Supplier Device Package: W7
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 2400 V
Voltage - Forward (Vf) (Max) @ If: 1.18 V @ 6800 A
Current - Reverse Leakage @ Vr: 150 mA @ 2400 V
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N1581QL160 IXYS media?resourcetype=datasheets&amp;itemid=ea47f116-9cdf-4dc4-a5dd-3ccc5dcaa7c2&amp;filename=littelfuse_discrete_thyristors_phase_control_n1581ql1_0_datasheet.pdf Description: SCR 1.6KV 3050A WP6
Packaging: Box
Package / Case: TO-200AB, B-PuK
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 21000A @ 50Hz
Current - On State (It (AV)) (Max): 1535 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 2.2 V
Current - Off State (Max): 100 mA
Supplier Device Package: WP6
Part Status: Discontinued at Digi-Key
Current - On State (It (RMS)) (Max): 3050 A
Voltage - Off State: 1.6 kV
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N1581QL180 IXYS media?resourcetype=datasheets&amp;itemid=ea47f116-9cdf-4dc4-a5dd-3ccc5dcaa7c2&amp;filename=littelfuse_discrete_thyristors_phase_control_n1581ql1_0_datasheet.pdf Description: SCR 1.8KV 3050A WP6
Packaging: Box
Package / Case: TO-200AB, B-PuK
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 21000A @ 50Hz
Current - On State (It (AV)) (Max): 1535 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 2.2 V
Current - Off State (Max): 100 mA
Supplier Device Package: WP6
Part Status: Discontinued at Digi-Key
Current - On State (It (RMS)) (Max): 3050 A
Voltage - Off State: 1.8 kV
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W1411LC360 IXYS media?resourcetype=datasheets&itemid=63c16840-7f43-4a72-afb5-fbbda70431dd&filename=littelfuse_discrete_diodes_rectifier_w1411lc3_0_datasheet.pdf Description: DIODE GEN PURP 3.6KV 1411A W4
Packaging: Box
Package / Case: DO-200AB, B-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1411A
Supplier Device Package: W4
Operating Temperature - Junction: -55°C ~ 160°C
Voltage - DC Reverse (Vr) (Max): 3600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 2870 A
Current - Reverse Leakage @ Vr: 30 mA @ 3600 V
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N5415EA320 IXYS Description: PHASE CONTROL THYRISTOR
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P0848YC04B IXYS media?resourcetype=datasheets&amp;itemid=b736798f-6ed6-493c-99be-c2f861cff4f6&amp;filename=littelfuse_discrete_thyristors_fast_thyristors_p0848yc0___datasheet.pdf Description: SCR 400V 1713A W58
Packaging: Box
Package / Case: TO-200AB, B-PuK
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 9625A @ 50Hz
Current - On State (It (AV)) (Max): 848 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 1.47 V
Current - Off State (Max): 50 mA
Supplier Device Package: W58
Current - On State (It (RMS)) (Max): 1713 A
Voltage - Off State: 400 V
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DSEI12-06AS-TUB DSEI12-06AS-TUB IXYS Description: DIODE STANDARD 600V 14A TO263AA
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 14A
Supplier Device Package: TO-263AA
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 16 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
на замовлення 49 шт:
термін постачання 21-31 дні (днів)
2+279.30 грн
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ZY180R480 ZY180R480 IXYS Description: X SER KEY PLUG W/WIRE 480MM RED
Packaging: Bulk
Part Status: Active
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DSEI120-12AZ-TUB DSEI120-12AZ-TUB IXYS Littelfuse-Power-Semiconductors-DSEI120-12AZ-Datasheet?assetguid=a5bf7040-7812-4c27-a0c7-8610a2274c6c Description: DIODE STD 1200V 109A TO268AA
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Current - Average Rectified (Io): 109A
Supplier Device Package: TO-268AA
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 70 A
Current - Reverse Leakage @ Vr: 3 mA @ 1200 V
на замовлення 92 шт:
термін постачання 21-31 дні (днів)
1+1106.49 грн
30+653.85 грн
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IXBH42N250 IXBH42N250 IXYS littelfuse-discrete-igbts-ixbh42n250-datasheet?assetguid=deeed825-f7c5-420f-8a6b-2589ebdb9560 Description: IGBT 2500V 104A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 1.7 µs
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 42A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 72ns/445ns
Test Condition: 1250V, 42A, 20Ohm, 15V
Gate Charge: 200 nC
Part Status: Active
Current - Collector (Ic) (Max): 104 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 400 A
Power - Max: 500 W
на замовлення 220 шт:
термін постачання 21-31 дні (днів)
1+3397.75 грн
30+2319.56 грн
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ZY180L480 ZY180L480 IXYS Description: X SERIES KEY PLUG W/WIRE 480MM
Packaging: Bulk
Part Status: Active
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DSEP12-12BZ-TUB DSEP12-12BZ-TUB IXYS media?resourcetype=datasheets&itemid=e6aa2de7-e5da-4c5f-8db0-895698af1fed&filename=littelfuse%2520power%2520semiconductors%2520dsep12-12bz%2520datasheet.pdf Description: DIODE GEN PURP 1.2KV 12A TO263HV
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 70 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 600V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-263HV
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.25 V @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
на замовлення 50 шт:
термін постачання 21-31 дні (днів)
2+290.84 грн
50+154.76 грн
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DSEP12-12AZ-TUB DSEP12-12AZ-TUB IXYS Littelfuse-Power-Semiconductors-DSEP12-12AZ-Datasheet?assetguid=012c4d94-42d0-46bd-b403-cba1fb09e8b0 Description: DIODE STANDARD 1200V 12A TO263HV
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 600V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-263HV
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.62 V @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
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DSEI12-12AZ-TUB DSEI12-12AZ-TUB IXYS Description: DIODE STANDARD 1200V 11A TO263HV
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 6pF @ 600V, 1MHz
Current - Average Rectified (Io): 11A
Supplier Device Package: TO-263HV
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.6 V @ 12 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
на замовлення 1265 шт:
термін постачання 21-31 дні (днів)
2+296.60 грн
50+145.92 грн
100+132.35 грн
500+101.91 грн
1000+94.75 грн
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IXFA80N25X3TRL IXFA80N25X3TRL IXYS Description: MOSFET N-CH 250V 80A X3CLASS TO-
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
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DSEP40-03AS-TUB DSEP40-03AS-TUB IXYS media?resourcetype=datasheets&itemid=4c2d2dd8-9974-4f79-b86f-23a25c93ff5b&filename=littelfuse%2520power%2520semiconductors%2520dsep40-03as%2520datasheet.pdf Description: DIODE GEN PURP 300V 40A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 150V, 1MHz
Current - Average Rectified (Io): 40A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.46 V @ 40 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
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IXYH30N65B3D1 IXYS Description: DISC IGBT XPT-GENX3 TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 38 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A
Supplier Device Package: TO-247 (IXYH)
IGBT Type: PT
Td (on/off) @ 25°C: 17ns/87ns
Switching Energy: 830µJ (on), 640µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 45 nC
Part Status: Active
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 270 W
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DCG20B650LB-TRR IXYS Description: BIPOLAR MODULE-BRIDGE RECTIFIER
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IXG50I4500KN IXYS Description: DISC IGBT NPT-VERY HI VOLTAGE IS
Packaging: Tube
Package / Case: ISOPLUS264™
Mounting Type: Through Hole
Input Type: Standard
Supplier Device Package: ISOPLUS264™
IGBT Type: PT
Part Status: Active
Current - Collector (Ic) (Max): 74 A
Voltage - Collector Emitter Breakdown (Max): 4500 V
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CLA100E1200KB IXYS Littelfuse-Power-Semiconductors-CLA100E1200KB-Datasheet?assetguid=a0930cdd-14b8-43a1-a3f0-53bfd2ca5b7c Description: SCR 1.2KV 160A TO-264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 100 mA
Current - Gate Trigger (Igt) (Max): 40 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1100A, 11900A
Current - On State (It (AV)) (Max): 100 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Voltage - On State (Vtm) (Max): 1.37 V
Supplier Device Package: TO-264
Part Status: Active
Current - On State (It (RMS)) (Max): 160 A
Voltage - Off State: 1.2 kV
на замовлення 125 шт:
термін постачання 21-31 дні (днів)
1+729.97 грн
25+427.32 грн
100+361.70 грн
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IXYH30N120C4 IXYS littelfuse-discrete-igbts-ixyh30n120c4-datasheet?assetguid=c7f20c7f-04a8-494d-a5d4-ff27e9de9932 Description: IGBT PT 1200V 94A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 58 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 25A
Supplier Device Package: TO-247 (IXYH)
IGBT Type: PT
Td (on/off) @ 25°C: 18ns/205ns
Switching Energy: 4.8mJ (on), 1.5mJ (off)
Test Condition: 960V, 25A, 5Ohm, 15V
Gate Charge: 57 nC
Part Status: Active
Current - Collector (Ic) (Max): 94 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 166 A
Power - Max: 500 W
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CMA60MT1600NHR IXYS CMA60MT1600NHR.pdf Description: TRIAC 1.6KV 66A ISO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Triac Type: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 60 mA
Current - Gate Trigger (Igt) (Max): 80 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 260A, 280A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: ISO247
Current - On State (It (RMS)) (Max): 66 A
Voltage - Off State: 1.6 kV
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IXTD1R4N60P 11
Виробник: IXYS
Description: MOSFET N-CH 600V 1.4A DIE
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T-TD1R4N60P 11
Виробник: IXYS
Description: MOSFET N-CH 600V
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IXFM10N90
Виробник: IXYS
Description: MOSFET N-CH 900V 10A TO204AA
Packaging: Tube
Package / Case: TO-204AA, TO-3
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 5A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-204AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V
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IXFM11N80 littelfuse_discrete_mosfets_n-channel_hiperfets_ixfh13n80_datasheet.pdf.pdf
Виробник: IXYS
Description: MOSFET N-CH 800V 11A TO204AA
Packaging: Tube
Package / Case: TO-204AA, TO-3
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 5.5A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-204AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V
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IXFM42N20 littelfuse-discrete-mosfets-ixfh50n20-datasheet?assetguid=fabf9ac5-d2db-4c2d-87fd-77971009cfca
Виробник: IXYS
Description: MOSFET N-CH 200V 42A TO204AE
Packaging: Tube
Package / Case: TO-204AE
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 21A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 4mA
Supplier Device Package: TO-204AE
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 25 V
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IXTM10P60
Виробник: IXYS
Description: POWER MOSFET TO-3
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IXTM11N80
Виробник: IXYS
Description: MOSFET N-CH 800V 11A TO204AA
Packaging: Tube
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 5.5A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-204AA (IXTM)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
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IXTM12N100
Виробник: IXYS
Description: MOSFET N-CH 1000V 12A TO204AA
Packaging: Tube
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 6A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-204AA (IXTM)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V
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IXTM21N50L
Виробник: IXYS
Description: POWER MOSFET TO-3
Packaging: Tube
Part Status: Obsolete
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IXTM24N50L
Виробник: IXYS
Description: POWER MOSFET TO-3
Packaging: Tube
Part Status: Obsolete
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IXTM40N30 littelfuse_discrete_mosfets_n-channel_standard_ixth40n30_datasheet.pdf.pdf
Виробник: IXYS
Description: MOSFET N-CH 300V 40A TO204AE
Packaging: Tube
Package / Case: TO-204AE
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 88mOhm @ 20A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-204AE
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 25 V
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IXTM50N20 littelfuse_discrete_mosfets_n-channel_standard_ixth50n20_datasheet.pdf.pdf
Виробник: IXYS
Description: MOSFET N-CH 200V 50A TO204AE
Packaging: Tube
Package / Case: TO-204AE
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 25A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-204AE
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 25 V
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IXFP12N65X2M littelfuse-discrete-mosfets-ixfp12n65x2m-datasheet?assetguid=c1c8d93a-0436-4ab9-8017-976e24f2421b
IXFP12N65X2M
Виробник: IXYS
Description: MOSFET N-CH 650V 12A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 310mOhm @ 6A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220 Isolated Tab
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 18.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1134 pF @ 25 V
на замовлення 777 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+360.87 грн
50+180.88 грн
100+164.78 грн
500+128.18 грн
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IXTD2N60P-1J
Виробник: IXYS
Description: MOSFET N-CH 600V 2A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 5.1Ohm @ 1A, 10V
Power Dissipation (Max): 56W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: Die
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 25 V
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IXTD3N60P-2J
Виробник: IXYS
Description: MOSFET N-CH 600V 3A DIE
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MIXA100PF1200TMH
Виробник: IXYS
Description: MOD IGBT LEG DIODE NTC
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IXFN52N100X Viewer.aspx?p=http%3a%2f%2fixapps.ixys.com%2fDataSheet%2fDS100911B(IXFN52N100X).pdf
IXFN52N100X
Виробник: IXYS
Description: MOSFET N-CH 1000V 44A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 26A, 10V
Power Dissipation (Max): 830W (Tc)
Vgs(th) (Max) @ Id: 6V @ 4mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 245 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6725 pF @ 25 V
на замовлення 149 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+4565.21 грн
10+4101.31 грн
100+3561.00 грн
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SM232K10L SM232K10L.pdf
SM232K10L
Виробник: IXYS
Description: MONOCRYST SOLAR CELL 5.07W 6.91V
на замовлення 8 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+6473.36 грн
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IXFN74N100X IXFN74N100X.pdf
IXFN74N100X
Виробник: IXYS
Description: MOSFET N-CH 1000V 74A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 74A (Tc)
Rds On (Max) @ Id, Vgs: 66mOhm @ 37A, 10V
Power Dissipation (Max): 1170W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 425 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17000 pF @ 25 V
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IXTH130N15X4 littelfuse_discrete_mosfets_n-channel_ultra_junction_ixt_130n15x4_datasheet.pdf.pdf
IXTH130N15X4
Виробник: IXYS
Description: MOSFET N-CH 150V 130A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 70A, 10V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4770 pF @ 25 V
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IXTP130N15X4 littelfuse_discrete_mosfets_n-channel_ultra_junction_ixt_130n15x4_datasheet.pdf.pdf
IXTP130N15X4
Виробник: IXYS
Description: MOSFET N-CH 150V 130A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 70A, 10V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4770 pF @ 25 V
на замовлення 1446 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+507.52 грн
50+389.85 грн
100+348.82 грн
500+288.84 грн
1000+259.96 грн
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M0955JK250
Виробник: IXYS
Description: DIODE STANDARD 2500V 1105A W113
Packaging: Box
Package / Case: DO-200AB, B-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3.4 µs
Technology: Standard
Current - Average Rectified (Io): 1105A
Supplier Device Package: W113
Voltage - DC Reverse (Vr) (Max): 2500 V
Voltage - Forward (Vf) (Max) @ If: 1.44 V @ 1000 A
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N3597ML020
Виробник: IXYS
Description: SCR 200V 7030A WP5
Packaging: Box
Package / Case: TO-200AC, K-PUK
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 140°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 50000A @ 50Hz
Current - On State (It (AV)) (Max): 3597 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 1.53 V
Current - Off State (Max): 100 mA
Supplier Device Package: WP5
Part Status: Discontinued at Digi-Key
Current - On State (It (RMS)) (Max): 7030 A
Voltage - Off State: 200 V
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A1237NC280
Виробник: IXYS
Description: SCR 2.8KV 2555A W11
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K0500LC600
Виробник: IXYS
Description: SCR 6KV 975A W10
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N5415EA360
Виробник: IXYS
Description: PHASE CONTROL THYRISTOR
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N2418ZD360
Виробник: IXYS
Description: SCR 3.6KV W46
Packaging: Box
Package / Case: TO-200AF
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Current - Non Rep. Surge 50, 60Hz (Itsm): 30000A @ 50Hz
Current - On State (It (AV)) (Max): 2418 A
Supplier Device Package: W46
Voltage - Off State: 3.6 kV
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N3597ML060
Виробник: IXYS
Description: SCR 600V 7030A WP5
Packaging: Box
Package / Case: TO-200AC, K-PUK
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 140°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 50000A @ 50Hz
Current - On State (It (AV)) (Max): 3597 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 1.53 V
Current - Off State (Max): 100 mA
Supplier Device Package: WP5
Part Status: Discontinued at Digi-Key
Current - On State (It (RMS)) (Max): 7030 A
Voltage - Off State: 600 V
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N4165EE420
Виробник: IXYS
Description: SCR 4.2KV W108
Packaging: Box
Package / Case: TO-200AF
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Current - Non Rep. Surge 50, 60Hz (Itsm): 56000A @ 50Hz
Current - On State (It (AV)) (Max): 4165 A
Supplier Device Package: W108
Part Status: Discontinued at Digi-Key
Voltage - Off State: 4.2 kV
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N1174JK200
Виробник: IXYS
Description: SCR 2KV 2313A WP1
Packaging: Box
Package / Case: TO-200AB, B-PuK
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 14500A @ 50Hz
Current - On State (It (AV)) (Max): 1174 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 2.46 V
Current - Off State (Max): 100 mA
Supplier Device Package: WP1
Current - On State (It (RMS)) (Max): 2313 A
Voltage - Off State: 2 kV
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W3090HA600
Виробник: IXYS
Description: RECTIFIER DIODE
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K4005EA520
Виробник: IXYS
Description: SCR 5.2KV W107
Packaging: Box
Package / Case: TO-200AF
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Current - Non Rep. Surge 50, 60Hz (Itsm): 43200A @ 50Hz
Current - On State (It (AV)) (Max): 4005 A
Supplier Device Package: W107
Part Status: Discontinued at Digi-Key
Voltage - Off State: 5.2 kV
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K1010MA650
Виробник: IXYS
Description: PHASE CONTROL THYRISTOR
товару немає в наявності
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P0848YC06C media?resourcetype=datasheets&amp;itemid=b736798f-6ed6-493c-99be-c2f861cff4f6&amp;filename=littelfuse_discrete_thyristors_fast_thyristors_p0848yc0___datasheet.pdf
Виробник: IXYS
Description: SCR 600V 1713A W58
Packaging: Box
Package / Case: TO-200AB, B-PuK
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 9625A @ 50Hz
Current - On State (It (AV)) (Max): 848 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 1.47 V
Current - Off State (Max): 50 mA
Supplier Device Package: W58
Current - On State (It (RMS)) (Max): 1713 A
Voltage - Off State: 600 V
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W6262ZC200
Виробник: IXYS
Description: DIODE STANDARD 2000V 6262A W7
Packaging: Box
Package / Case: DO-200AE
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 6262A
Supplier Device Package: W7
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 2000 V
Voltage - Forward (Vf) (Max) @ If: 1.18 V @ 6800 A
Current - Reverse Leakage @ Vr: 150 mA @ 2000 V
товару немає в наявності
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P0848YC04C media?resourcetype=datasheets&amp;itemid=b736798f-6ed6-493c-99be-c2f861cff4f6&amp;filename=littelfuse_discrete_thyristors_fast_thyristors_p0848yc0___datasheet.pdf
Виробник: IXYS
Description: SCR 400V 1713A W58
Packaging: Box
Package / Case: TO-200AB, B-PuK
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 9625A @ 50Hz
Current - On State (It (AV)) (Max): 848 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 1.47 V
Current - Off State (Max): 50 mA
Supplier Device Package: W58
Current - On State (It (RMS)) (Max): 1713 A
Voltage - Off State: 400 V
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K4005EA480
Виробник: IXYS
Description: SCR 4.8KV W107
Packaging: Box
Package / Case: TO-200AF
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Current - Non Rep. Surge 50, 60Hz (Itsm): 43200A @ 50Hz
Current - On State (It (AV)) (Max): 4005 A
Supplier Device Package: W107
Part Status: Discontinued at Digi-Key
Voltage - Off State: 4.8 kV
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N3597ML040 media?resourcetype=datasheets&amp;itemid=c9853d53-1646-4292-a3e7-bcf7cec017d2&amp;filename=littelfuse_discrete_thyristors_phase_control_n3597ml0_0_datasheet.pdf
Виробник: IXYS
Description: SCR 400V 7030A WP5
Packaging: Box
Package / Case: TO-200AC, K-PUK
Mounting Type: Clamp On
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 140°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 50000A @ 50Hz
Current - On State (It (AV)) (Max): 3597 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 1.53 V
Current - Off State (Max): 100 mA
Supplier Device Package: WP5
Part Status: Discontinued at Digi-Key
Current - On State (It (RMS)) (Max): 7030 A
Voltage - Off State: 400 V
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W6262ZC240
Виробник: IXYS
Description: DIODE STANDARD 2400V 6262A W7
Packaging: Box
Package / Case: DO-200AE
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 6262A
Supplier Device Package: W7
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 2400 V
Voltage - Forward (Vf) (Max) @ If: 1.18 V @ 6800 A
Current - Reverse Leakage @ Vr: 150 mA @ 2400 V
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N1581QL160 media?resourcetype=datasheets&amp;itemid=ea47f116-9cdf-4dc4-a5dd-3ccc5dcaa7c2&amp;filename=littelfuse_discrete_thyristors_phase_control_n1581ql1_0_datasheet.pdf
Виробник: IXYS
Description: SCR 1.6KV 3050A WP6
Packaging: Box
Package / Case: TO-200AB, B-PuK
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 21000A @ 50Hz
Current - On State (It (AV)) (Max): 1535 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 2.2 V
Current - Off State (Max): 100 mA
Supplier Device Package: WP6
Part Status: Discontinued at Digi-Key
Current - On State (It (RMS)) (Max): 3050 A
Voltage - Off State: 1.6 kV
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N1581QL180 media?resourcetype=datasheets&amp;itemid=ea47f116-9cdf-4dc4-a5dd-3ccc5dcaa7c2&amp;filename=littelfuse_discrete_thyristors_phase_control_n1581ql1_0_datasheet.pdf
Виробник: IXYS
Description: SCR 1.8KV 3050A WP6
Packaging: Box
Package / Case: TO-200AB, B-PuK
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 21000A @ 50Hz
Current - On State (It (AV)) (Max): 1535 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 2.2 V
Current - Off State (Max): 100 mA
Supplier Device Package: WP6
Part Status: Discontinued at Digi-Key
Current - On State (It (RMS)) (Max): 3050 A
Voltage - Off State: 1.8 kV
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W1411LC360 media?resourcetype=datasheets&itemid=63c16840-7f43-4a72-afb5-fbbda70431dd&filename=littelfuse_discrete_diodes_rectifier_w1411lc3_0_datasheet.pdf
Виробник: IXYS
Description: DIODE GEN PURP 3.6KV 1411A W4
Packaging: Box
Package / Case: DO-200AB, B-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1411A
Supplier Device Package: W4
Operating Temperature - Junction: -55°C ~ 160°C
Voltage - DC Reverse (Vr) (Max): 3600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 2870 A
Current - Reverse Leakage @ Vr: 30 mA @ 3600 V
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N5415EA320
Виробник: IXYS
Description: PHASE CONTROL THYRISTOR
товару немає в наявності
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P0848YC04B media?resourcetype=datasheets&amp;itemid=b736798f-6ed6-493c-99be-c2f861cff4f6&amp;filename=littelfuse_discrete_thyristors_fast_thyristors_p0848yc0___datasheet.pdf
Виробник: IXYS
Description: SCR 400V 1713A W58
Packaging: Box
Package / Case: TO-200AB, B-PuK
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 9625A @ 50Hz
Current - On State (It (AV)) (Max): 848 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 1.47 V
Current - Off State (Max): 50 mA
Supplier Device Package: W58
Current - On State (It (RMS)) (Max): 1713 A
Voltage - Off State: 400 V
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DSEI12-06AS-TUB
DSEI12-06AS-TUB
Виробник: IXYS
Description: DIODE STANDARD 600V 14A TO263AA
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 14A
Supplier Device Package: TO-263AA
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 16 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
на замовлення 49 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+279.30 грн
Мінімальне замовлення: 2
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ZY180R480
ZY180R480
Виробник: IXYS
Description: X SER KEY PLUG W/WIRE 480MM RED
Packaging: Bulk
Part Status: Active
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DSEI120-12AZ-TUB Littelfuse-Power-Semiconductors-DSEI120-12AZ-Datasheet?assetguid=a5bf7040-7812-4c27-a0c7-8610a2274c6c
DSEI120-12AZ-TUB
Виробник: IXYS
Description: DIODE STD 1200V 109A TO268AA
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Current - Average Rectified (Io): 109A
Supplier Device Package: TO-268AA
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 70 A
Current - Reverse Leakage @ Vr: 3 mA @ 1200 V
на замовлення 92 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1106.49 грн
30+653.85 грн
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IXBH42N250 littelfuse-discrete-igbts-ixbh42n250-datasheet?assetguid=deeed825-f7c5-420f-8a6b-2589ebdb9560
IXBH42N250
Виробник: IXYS
Description: IGBT 2500V 104A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 1.7 µs
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 42A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 72ns/445ns
Test Condition: 1250V, 42A, 20Ohm, 15V
Gate Charge: 200 nC
Part Status: Active
Current - Collector (Ic) (Max): 104 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 400 A
Power - Max: 500 W
на замовлення 220 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+3397.75 грн
30+2319.56 грн
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ZY180L480
ZY180L480
Виробник: IXYS
Description: X SERIES KEY PLUG W/WIRE 480MM
Packaging: Bulk
Part Status: Active
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DSEP12-12BZ-TUB media?resourcetype=datasheets&itemid=e6aa2de7-e5da-4c5f-8db0-895698af1fed&filename=littelfuse%2520power%2520semiconductors%2520dsep12-12bz%2520datasheet.pdf
DSEP12-12BZ-TUB
Виробник: IXYS
Description: DIODE GEN PURP 1.2KV 12A TO263HV
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 70 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 600V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-263HV
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.25 V @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
на замовлення 50 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+290.84 грн
50+154.76 грн
Мінімальне замовлення: 2
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DSEP12-12AZ-TUB Littelfuse-Power-Semiconductors-DSEP12-12AZ-Datasheet?assetguid=012c4d94-42d0-46bd-b403-cba1fb09e8b0
DSEP12-12AZ-TUB
Виробник: IXYS
Description: DIODE STANDARD 1200V 12A TO263HV
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 600V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-263HV
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.62 V @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
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DSEI12-12AZ-TUB
DSEI12-12AZ-TUB
Виробник: IXYS
Description: DIODE STANDARD 1200V 11A TO263HV
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 6pF @ 600V, 1MHz
Current - Average Rectified (Io): 11A
Supplier Device Package: TO-263HV
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.6 V @ 12 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
на замовлення 1265 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+296.60 грн
50+145.92 грн
100+132.35 грн
500+101.91 грн
1000+94.75 грн
Мінімальне замовлення: 2
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IXFA80N25X3TRL
IXFA80N25X3TRL
Виробник: IXYS
Description: MOSFET N-CH 250V 80A X3CLASS TO-
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
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DSEP40-03AS-TUB media?resourcetype=datasheets&itemid=4c2d2dd8-9974-4f79-b86f-23a25c93ff5b&filename=littelfuse%2520power%2520semiconductors%2520dsep40-03as%2520datasheet.pdf
DSEP40-03AS-TUB
Виробник: IXYS
Description: DIODE GEN PURP 300V 40A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 150V, 1MHz
Current - Average Rectified (Io): 40A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.46 V @ 40 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
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IXYH30N65B3D1
Виробник: IXYS
Description: DISC IGBT XPT-GENX3 TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 38 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A
Supplier Device Package: TO-247 (IXYH)
IGBT Type: PT
Td (on/off) @ 25°C: 17ns/87ns
Switching Energy: 830µJ (on), 640µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 45 nC
Part Status: Active
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 270 W
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DCG20B650LB-TRR
Виробник: IXYS
Description: BIPOLAR MODULE-BRIDGE RECTIFIER
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IXG50I4500KN
Виробник: IXYS
Description: DISC IGBT NPT-VERY HI VOLTAGE IS
Packaging: Tube
Package / Case: ISOPLUS264™
Mounting Type: Through Hole
Input Type: Standard
Supplier Device Package: ISOPLUS264™
IGBT Type: PT
Part Status: Active
Current - Collector (Ic) (Max): 74 A
Voltage - Collector Emitter Breakdown (Max): 4500 V
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CLA100E1200KB Littelfuse-Power-Semiconductors-CLA100E1200KB-Datasheet?assetguid=a0930cdd-14b8-43a1-a3f0-53bfd2ca5b7c
Виробник: IXYS
Description: SCR 1.2KV 160A TO-264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 100 mA
Current - Gate Trigger (Igt) (Max): 40 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1100A, 11900A
Current - On State (It (AV)) (Max): 100 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Voltage - On State (Vtm) (Max): 1.37 V
Supplier Device Package: TO-264
Part Status: Active
Current - On State (It (RMS)) (Max): 160 A
Voltage - Off State: 1.2 kV
на замовлення 125 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+729.97 грн
25+427.32 грн
100+361.70 грн
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IXYH30N120C4 littelfuse-discrete-igbts-ixyh30n120c4-datasheet?assetguid=c7f20c7f-04a8-494d-a5d4-ff27e9de9932
Виробник: IXYS
Description: IGBT PT 1200V 94A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 58 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 25A
Supplier Device Package: TO-247 (IXYH)
IGBT Type: PT
Td (on/off) @ 25°C: 18ns/205ns
Switching Energy: 4.8mJ (on), 1.5mJ (off)
Test Condition: 960V, 25A, 5Ohm, 15V
Gate Charge: 57 nC
Part Status: Active
Current - Collector (Ic) (Max): 94 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 166 A
Power - Max: 500 W
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CMA60MT1600NHR CMA60MT1600NHR.pdf
Виробник: IXYS
Description: TRIAC 1.6KV 66A ISO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Triac Type: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 60 mA
Current - Gate Trigger (Igt) (Max): 80 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 260A, 280A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: ISO247
Current - On State (It (RMS)) (Max): 66 A
Voltage - Off State: 1.6 kV
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