| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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| GWM120-0075P3-SMD SAM | IXYS |
 Description: MOSFET 6N-CH 75V 118A ISOPLUSPackaging: Tube Package / Case: 17-SMD, Gull Wing Mounting Type: Surface Mount Configuration: 6 N-Channel (3-Phase Bridge) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 118A Rds On (Max) @ Id, Vgs: 5.5mOhm @ 60A, 10V Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: ISOPLUS-DIL™ Part Status: Active |
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| GWM120-0075X1-SMDSAM | IXYS |
Description: MOSFET 6N-CH 75V 110A ISOPLUS Packaging: Tube Package / Case: 17-SMD, Gull Wing Mounting Type: Surface Mount Configuration: 6 N-Channel (3-Phase Bridge) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 110A Rds On (Max) @ Id, Vgs: 4.9mOhm @ 60A, 10V Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: ISOPLUS-DIL™ Part Status: Obsolete |
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QJ6016LH5TP | IXYS |
Description: 16 AMP STANDARD HIGH TEMPERATURE Packaging: Tube Package / Case: TO-220-3 Isolated Tab Mounting Type: Through Hole Triac Type: Alternistor - Snubberless Configuration: Single Operating Temperature: -40°C ~ 150°C (TJ) Current - Hold (Ih) (Max): 50 mA Current - Gate Trigger (Igt) (Max): 50 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 167A, 200A Voltage - Gate Trigger (Vgt) (Max): 1.3 V Supplier Device Package: ITO-220AB Part Status: Active Current - On State (It (RMS)) (Max): 16 A Voltage - Off State: 600 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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IRFP460 | IXYS |
Description: MOSFET N-CH 500V 20A TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 270mOhm @ 12A, 10V Power Dissipation (Max): 260W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247AD Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25 |
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IRFP450 | IXYS |
 Description: MOSFET N-CH 500V 14A TO247ADPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 400mOhm @ 8.4A, 10V Power Dissipation (Max): 190W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247AD Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 25 V |
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DMA10IM1600UZ-TUB | IXYS |
Description: DIODE GEN PURP 1.6KV 10A TO252AA Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 4pF @ 400V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: TO-252AA Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1600 V Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 10 A Current - Reverse Leakage @ Vr: 10 µA @ 1600 V |
на замовлення 480 шт: термін постачання 21-31 дні (днів) |
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| IXFH26N65X3 | IXYS |
Description: DISCRETE MOSFET 26A 650V X3 TO24 Packaging: Tube Part Status: Active |
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DPF240X400NA | IXYS |
Description: DIODE MODULE 400V 120A SOT227B Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 45 ns Technology: Standard Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 120A Supplier Device Package: SOT-227B Operating Temperature - Junction: -40°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 120 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V |
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| R1127NC32P | IXYS |
Description: SCR 3.2KV 2247A W11 Packaging: Box Package / Case: TO-200AC, K-PUK Mounting Type: Chassis Mount SCR Type: Standard Recovery Operating Temperature: -40°C ~ 125°C Current - Hold (Ih) (Max): 1 A Current - Gate Trigger (Igt) (Max): 300 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 14100A @ 50Hz Current - On State (It (AV)) (Max): 1127 A Voltage - Gate Trigger (Vgt) (Max): 3 V Voltage - On State (Vtm) (Max): 2.42 V Current - Off State (Max): 100 mA Supplier Device Package: W11 Part Status: Discontinued at Digi-Key Current - On State (It (RMS)) (Max): 2247 A Voltage - Off State: 3.2 kV |
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MCMA140PD1600TB-NI | IXYS |
Description: BIPOLAR MODULE THYRISTOR/DIODE T Packaging: Box Package / Case: TO-240AA Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 140°C (TJ) Structure: Series Connection - SCR/Diode Current - Hold (Ih) (Max): 200 mA Current - Gate Trigger (Igt) (Max): 150 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 2400A, 2590A Number of SCRs, Diodes: 1 SCR, 1 Diode Current - On State (It (AV)) (Max): 140 A Voltage - Gate Trigger (Vgt) (Max): 1.5 V Part Status: Active Current - On State (It (RMS)) (Max): 220 A Voltage - Off State: 1.6 kV |
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| IXFJ52N30Q | IXYS |
Description: MOSFET N-CH TO-220 Packaging: Tube Part Status: Obsolete |
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| IXDR35N120D1 | IXYS |
Description: IGBT Packaging: Bulk Part Status: Obsolete |
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| MIXG240W1200PZTEH | IXYS |
Description: IGBT MODULE - SIXPACK E3-PACK-PF Packaging: Box Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 200A NTC Thermistor: Yes Supplier Device Package: E3 Part Status: Active Current - Collector (Ic) (Max): 312 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 938 W Current - Collector Cutoff (Max): 150 µA Input Capacitance (Cies) @ Vce: 10.6 nF @ 100 V |
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| MIXG240W1200PTEH | IXYS |
Description: IGBT MODULE - SIXPACK E3-PACK-PF Packaging: Box Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 200A NTC Thermistor: Yes Supplier Device Package: E3 Part Status: Active Current - Collector (Ic) (Max): 312 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 938 W Current - Collector Cutoff (Max): 150 µA Input Capacitance (Cies) @ Vce: 10.6 nF @ 100 V |
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| MIXG180W1200TEH | IXYS |
Description: IGBT MODULE - SIXPACK E3-PACK-PF Packaging: Box Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 150A NTC Thermistor: Yes Supplier Device Package: E3 Part Status: Active Current - Collector (Ic) (Max): 280 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 935 W Current - Collector Cutoff (Max): 500 µA Input Capacitance (Cies) @ Vce: 8.5 nF @ 100 V |
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| MIXG240W1200TEH | IXYS |
Description: IGBT MODULE - SIXPACK E3-PACK-PF Packaging: Box Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 200A NTC Thermistor: Yes Supplier Device Package: E3 Part Status: Active Current - Collector (Ic) (Max): 370 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 1250 W Current - Collector Cutoff (Max): 200 µA Input Capacitance (Cies) @ Vce: 10.6 nF @ 100 V |
на замовлення 40 шт: термін постачання 21-31 дні (днів) |
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MCNA180P2200YA | IXYS |
Description: BIPOLAR MODULE - THYRISTOR Y4-M Packaging: Box Package / Case: Y4-M6 Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 140°C (TJ) Structure: Series Connection - All SCRs Current - Hold (Ih) (Max): 200 mA Current - Gate Trigger (Igt) (Max): 150 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 5400A, 5830A Number of SCRs, Diodes: 2 SCRs Current - On State (It (AV)) (Max): 180 A Voltage - Gate Trigger (Vgt) (Max): 2 V Part Status: Active Current - On State (It (RMS)) (Max): 280 A Voltage - Off State: 2.2 kV |
на замовлення 9 шт: термін постачання 21-31 дні (днів) |
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MCNA180PD2200YB | IXYS |
Description: BIPOLAR MODULE - THYRISTOR Y4-M Packaging: Box Package / Case: Y4-M6 Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 140°C (TJ) Structure: Series Connection - SCR/Diode Current - Hold (Ih) (Max): 200 mA Current - Gate Trigger (Igt) (Max): 150 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 5400A, 5830A Number of SCRs, Diodes: 1 SCR, 1 Diode Current - On State (It (AV)) (Max): 180 A Voltage - Gate Trigger (Vgt) (Max): 2 V Part Status: Active Current - On State (It (RMS)) (Max): 280 A Voltage - Off State: 2.2 kV |
на замовлення 6 шт: термін постачання 21-31 дні (днів) |
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MDD26-08N1B | IXYS |
Description: DIODE MODULE 800V 36A TO240AA Packaging: Box Package / Case: TO-240AA Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 36A Supplier Device Package: TO-240AA Operating Temperature - Junction: -40°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.38 V @ 80 A Current - Reverse Leakage @ Vr: 10 mA @ 800 V |
на замовлення 24 шт: термін постачання 21-31 дні (днів) |
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| MCMA200P1600YA | IXYS |
Description: SCR MODULE 1.6KV 200A MODULE Packaging: Box Package / Case: Module Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 140°C (TJ) Structure: Series Connection - All SCRs Current - Hold (Ih) (Max): 200 mA Current - Gate Trigger (Igt) (Max): 150 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 6000A, 6480A Number of SCRs, Diodes: 2 SCRs Current - On State (It (AV)) (Max): 200 A Voltage - Gate Trigger (Vgt) (Max): 2.5 V Part Status: Active Current - On State (It (RMS)) (Max): 315 A Voltage - Off State: 1.6 kV |
на замовлення 6 шт: термін постачання 21-31 дні (днів) |
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| MDMA140P1800TG | IXYS |
Description: RECT MOD 1800V 140A Packaging: Bulk Part Status: Active |
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IX6611T | IXYS |
Description: IC MOSF DRIVER Packaging: Tube Package / Case: 16-SOIC (0.154", 3.90mm Width) Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Voltage - Supply: 13V ~ 25V Applications: Overvoltage, Undervoltage Protection Current - Supply: 3mA Supplier Device Package: 16-SOIC-EP Part Status: Obsolete |
на замовлення 180 шт: термін постачання 21-31 дні (днів) |
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IX6611TR | IXYS |
Description: IC MOSF DRIVER Packaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.154", 3.90mm Width) Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Voltage - Supply: 13V ~ 25V Applications: Overvoltage, Undervoltage Protection Current - Supply: 3mA Supplier Device Package: 16-SOIC-EP Part Status: Obsolete |
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IXFY4N85X | IXYS |
Description: MOSFET N-CH 850V 3.5A TO252 Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc) Rds On (Max) @ Id, Vgs: 2.5Ohm @ 2A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 850 V Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 247 pF @ 25 V |
на замовлення 68 шт: термін постачання 21-31 дні (днів) |
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DLA40IM800PC-TRL | IXYS |
Description: DIODE GEN PURP 800V 40A TO263AA Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 10pF @ 400V, 1MHz Current - Average Rectified (Io): 40A Supplier Device Package: TO-263AA Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 40 A Current - Reverse Leakage @ Vr: 10 µA @ 800 V |
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DLA40IM800PC-TRL | IXYS |
Description: DIODE GEN PURP 800V 40A TO263AA Packaging: Cut Tape (CT) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 10pF @ 400V, 1MHz Current - Average Rectified (Io): 40A Supplier Device Package: TO-263AA Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 40 A Current - Reverse Leakage @ Vr: 10 µA @ 800 V |
на замовлення 117 шт: термін постачання 21-31 дні (днів) |
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| IXFX140N60X3 | IXYS |
Description: DISCRETE MOSFET 140A 600V X3 PLU Packaging: Tube |
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| IXFK140N60X3 | IXYS |
Description: DISCRETE MOSFET 140A 600V X3 TO2 Packaging: Tube |
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| IXFP18N65X3 | IXYS |
Description: DISCRETE MOSFET 18A 650V X3 TO22 Packaging: Tube |
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| IXFP16N85X | IXYS |
Description: IXFP16N85X Packaging: Tube |
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| IXFP16N85XM | IXYS |
Description: IXFP16N85XM Packaging: Tube |
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| IXFP26N65X3 | IXYS |
Description: DISCRETE MOSFET 26A 650V X3 TO22 Packaging: Tube |
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| IXFA26N65X3 | IXYS |
Description: DISCRETE MOSFET 26A 650V X3 TO26 Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Rds On (Max) @ Id, Vgs: 155mOhm @ 500mA, 10V Power Dissipation (Max): 357W (Tc) Vgs(th) (Max) @ Id: 5.2V @ 2.5mA Supplier Device Package: TO-263 (IXFA) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V |
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| MIXG300PF1700TSF | IXYS |
Description: IGBT MODULE - PHASELEG SIMBUS F- Packaging: Box Package / Case: SimBus F Mounting Type: Chassis Mount Input: Standard Configuration: Single NTC Thermistor: No Supplier Device Package: SimBus F IGBT Type: PT |
на замовлення 3 шт: термін постачання 21-31 дні (днів) |
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| N0465WN140 | IXYS |
Description: SCR 1.4KV 920A W90 Packaging: Box Package / Case: TO-200AB, B-PuK Mounting Type: Chassis Mount SCR Type: Standard Recovery Operating Temperature: -60°C ~ 125°C Current - Hold (Ih) (Max): 250 mA Current - Gate Trigger (Igt) (Max): 250 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 5000A @ 50Hz Current - On State (It (AV)) (Max): 465 A Voltage - Gate Trigger (Vgt) (Max): 2.5 V Voltage - On State (Vtm) (Max): 2.09 V Current - Off State (Max): 50 mA Supplier Device Package: W90 Current - On State (It (RMS)) (Max): 920 A Voltage - Off State: 1.4 kV |
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| IXYH40N120C4H1 | IXYS |
Description: IGBT TRENCH 1200V 110A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 380 ns Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 32A Supplier Device Package: TO-247 (IXYH) IGBT Type: Trench Td (on/off) @ 25°C: 21ns/140ns Switching Energy: 5.55mJ (on), 1.55mJ (off) Test Condition: 960V, 32A, 5Ohm, 15V Gate Charge: 92 nC Current - Collector (Ic) (Max): 110 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 230 A Power - Max: 680 W |
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| E1250HC45E | IXYS |
Description: DIODE GEN PURP 4.5KV 1355A W122 Packaging: Box Package / Case: DO-200AD Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.2 µs Technology: Standard Current - Average Rectified (Io): 1355A Supplier Device Package: W122 Voltage - DC Reverse (Vr) (Max): 4500 V Voltage - Forward (Vf) (Max) @ If: 2.07 V @ 1250 A Current - Reverse Leakage @ Vr: 1 mA @ 4500 V |
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DCG45X1200NA | IXYS |
Description: DIODE MOD SIC 1200V 22A SOT227B Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 22A Supplier Device Package: SOT-227B Operating Temperature - Junction: -40°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A Current - Reverse Leakage @ Vr: 200 µA @ 1200 V |
на замовлення 4 шт: термін постачання 21-31 дні (днів) |
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DNA30EM2200PZ-TUB | IXYS |
Description: DIODE GEN PURP 2.2KV 30A TO263HV Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 7pF @ 700V, 1MHz Current - Average Rectified (Io): 30A Supplier Device Package: TO-263HV Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 2200 V Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 30 A Current - Reverse Leakage @ Vr: 40 µA @ 2200 V |
на замовлення 500 шт: термін постачання 21-31 дні (днів) |
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| K2325TJ600 | IXYS |
Description: SCR 6KV 4625A W81 Packaging: Box Package / Case: TO-200AF Mounting Type: Chassis Mount SCR Type: Standard Recovery Operating Temperature: -40°C ~ 125°C Current - Hold (Ih) (Max): 1 A Current - Gate Trigger (Igt) (Max): 300 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 36300A @ 50Hz Current - On State (It (AV)) (Max): 2380 A Voltage - Gate Trigger (Vgt) (Max): 3 V Voltage - On State (Vtm) (Max): 4.2 V Current - Off State (Max): 200 mA Supplier Device Package: W81 Current - On State (It (RMS)) (Max): 4625 A Voltage - Off State: 6 kV |
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| K2325TJ650 | IXYS |
Description: SCR 6.5KV 4625A W81 Packaging: Box Package / Case: TO-200AF Mounting Type: Chassis Mount SCR Type: Standard Recovery Operating Temperature: -40°C ~ 125°C Current - Hold (Ih) (Max): 1 A Current - Gate Trigger (Igt) (Max): 300 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 36300A @ 50Hz Current - On State (It (AV)) (Max): 2380 A Voltage - Gate Trigger (Vgt) (Max): 3 V Voltage - On State (Vtm) (Max): 4.2 V Current - Off State (Max): 200 mA Supplier Device Package: W81 Current - On State (It (RMS)) (Max): 4625 A Voltage - Off State: 6.5 kV |
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| IXFH67N10Q | IXYS |
Description: MOSFET N-CH 100V 67A TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 67A (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 33.5A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 4mA Supplier Device Package: TO-247AD (IXFH) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V |
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| IXYA20N120C4HV-TRL | IXYS |
Description: DISC. IGBT XPT-GENX4 TO-263HV Packaging: Tape & Reel (TR) |
на замовлення 1600 шт: термін постачання 21-31 дні (днів) |
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MCNA220P2200YA | IXYS |
Description: BIPOLAR MODULE - THYRISTOR Y4-M Packaging: Box Package / Case: Y4-M6 Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 140°C (TJ) Structure: Series Connection - All SCRs Current - Hold (Ih) (Max): 200 mA Current - Gate Trigger (Igt) (Max): 150 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 7200A, 7780A Number of SCRs, Diodes: 2 SCRs Current - On State (It (AV)) (Max): 220 A Voltage - Gate Trigger (Vgt) (Max): 2 V Current - On State (It (RMS)) (Max): 345 A Voltage - Off State: 2.2 kV |
на замовлення 5 шт: термін постачання 21-31 дні (днів) |
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MCNA150P2200YA | IXYS |
Description: BIPOLAR MODULE - THYRISTOR Y4-M Packaging: Box Package / Case: Y4-M6 Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 140°C (TJ) Structure: Series Connection - All SCRs Current - Hold (Ih) (Max): 200 mA Current - Gate Trigger (Igt) (Max): 150 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 4300A, 4650A Number of SCRs, Diodes: 2 SCRs Current - On State (It (AV)) (Max): 150 A Voltage - Gate Trigger (Vgt) (Max): 2 V Current - On State (It (RMS)) (Max): 235 A Voltage - Off State: 2.2 kV |
на замовлення 6 шт: термін постачання 21-31 дні (днів) |
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| IXFA18N65X3 | IXYS |
Description: DISCRETE MOSFET 18A 650V X3 TO26 Packaging: Tube |
товар відсутній |
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MDD56-12N1B | IXYS |
Description: DIODE MOD GP 1.2KV 95A TO240AA Packaging: Box Package / Case: TO-240AA Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 95A Supplier Device Package: TO-240AA Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.48 V @ 200 A Current - Reverse Leakage @ Vr: 10 mA @ 1200 V |
на замовлення 35 шт: термін постачання 21-31 дні (днів) |
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| IXYX300N65A3 | IXYS |
Description: DISC IGBT XPT-GENX3 TO-247AD Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 125 ns Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 100A Supplier Device Package: PLUS247™-3 IGBT Type: PT Td (on/off) @ 25°C: 42ns/190ns Switching Energy: 7.8mJ (on), 4.7mJ (off) Test Condition: 400V, 100A, 1Ohm, 15V Gate Charge: 565 nC Current - Collector (Ic) (Max): 600 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 1460 A Power - Max: 2300 W |
товар відсутній |
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| IXTB1909 | IXYS | Description: POWER MOSFET 500V 100AMP |
на замовлення 19470 шт: термін постачання 21-31 дні (днів) |
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| IXFX120N60X3 | IXYS |
Description: DISCRETE MOSFET 120A 600V X3 PLU Packaging: Tube |
товар відсутній |
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| IXFK120N60X3 | IXYS |
Description: DISCRETE MOSFET 120A 600V X3 TO2 Packaging: Tube |
товар відсутній |
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| IXFN120N60X3 | IXYS |
Description: DISCRETE MOSFET 120A 600V X3 SOT Packaging: Tube |
товар відсутній |
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QJ8030NH4RP | IXYS |
Description: TRIAC ALTERNISTOR 800V 30A TO263 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Triac Type: Alternistor - Snubberless Configuration: Single Operating Temperature: -40°C ~ 150°C (TJ) Current - Hold (Ih) (Max): 60 mA Current - Gate Trigger (Igt) (Max): 35 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 290A, 350A Voltage - Gate Trigger (Vgt) (Max): 1 V Supplier Device Package: TO-263 (D2Pak) Current - On State (It (RMS)) (Max): 30 A Voltage - Off State: 800 V |
на замовлення 980 шт: термін постачання 21-31 дні (днів) |
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QJ8030NH4RP | IXYS |
Description: TRIAC ALTERNISTOR 800V 30A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Triac Type: Alternistor - Snubberless Configuration: Single Operating Temperature: -40°C ~ 150°C (TJ) Current - Hold (Ih) (Max): 60 mA Current - Gate Trigger (Igt) (Max): 35 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 290A, 350A Voltage - Gate Trigger (Vgt) (Max): 1 V Supplier Device Package: TO-263 (D2Pak) Current - On State (It (RMS)) (Max): 30 A Voltage - Off State: 800 V |
на замовлення 500 шт: термін постачання 21-31 дні (днів) |
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QV6012RH4TP | IXYS |
Description: TRIAC SENS GATE 600V 12A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Triac Type: Logic - Sensitive Gate Configuration: Single Operating Temperature: -40°C ~ 150°C (TJ) Current - Hold (Ih) (Max): 50 mA Current - Gate Trigger (Igt) (Max): 35 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 140A, 153A Voltage - Gate Trigger (Vgt) (Max): 1.2 V Supplier Device Package: TO-220 Current - On State (It (RMS)) (Max): 12 A Voltage - Off State: 600 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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QV6012LH4TP | IXYS |
Description: TRIAC SENS GATE 600V 12A ITO220 Packaging: Tube Package / Case: TO-220-3 Isolated Tab Mounting Type: Through Hole Triac Type: Logic - Sensitive Gate Configuration: Single Operating Temperature: -40°C ~ 150°C (TJ) Current - Hold (Ih) (Max): 50 mA Current - Gate Trigger (Igt) (Max): 35 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 140A, 153A Voltage - Gate Trigger (Vgt) (Max): 1.2 V Supplier Device Package: ITO-220AB Current - On State (It (RMS)) (Max): 12 A Voltage - Off State: 600 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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QV6012LH5TP | IXYS |
Description: TRIAC SENS GATE 600V 12A ITO220 Packaging: Tube Package / Case: TO-220-3 Isolated Tab Mounting Type: Through Hole Triac Type: Logic - Sensitive Gate Configuration: Single Operating Temperature: -40°C ~ 150°C (TJ) Current - Hold (Ih) (Max): 50 mA Current - Gate Trigger (Igt) (Max): 50 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 140A, 153A Voltage - Gate Trigger (Vgt) (Max): 1.2 V Supplier Device Package: ITO-220AB Current - On State (It (RMS)) (Max): 12 A Voltage - Off State: 600 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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QV6012NH4TP | IXYS |
Description: TRIAC SENS GATE 600V 12A TO263 Packaging: Tube Mounting Type: Surface Mount Triac Type: Logic - Sensitive Gate Configuration: Single Operating Temperature: -40°C ~ 150°C (TJ) Current - Hold (Ih) (Max): 50 mA Current - Gate Trigger (Igt) (Max): 35 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 140A, 153A Voltage - Gate Trigger (Vgt) (Max): 1.2 V Supplier Device Package: TO-263 (D2Pak) Current - On State (It (RMS)) (Max): 12 A Voltage - Off State: 600 V |
на замовлення 995 шт: термін постачання 21-31 дні (днів) |
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QV6012NH5TP | IXYS |
Description: TRIAC SENS GATE 600V 12A TO263 Packaging: Tube Mounting Type: Surface Mount Triac Type: Logic - Sensitive Gate Configuration: Single Operating Temperature: -40°C ~ 150°C (TJ) Current - Hold (Ih) (Max): 50 mA Current - Gate Trigger (Igt) (Max): 50 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 140A, 153A Voltage - Gate Trigger (Vgt) (Max): 1.2 V Supplier Device Package: TO-263 (D2Pak) Current - On State (It (RMS)) (Max): 12 A Voltage - Off State: 600 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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DCG85X1200NA | IXYS |
Description: DIODE MOD SCHOTTKY 1200V SOT227B Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 43A Supplier Device Package: SOT-227B Operating Temperature - Junction: -40°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 40 A Current - Reverse Leakage @ Vr: 400 µA @ 1200 V |
на замовлення 40 шт: термін постачання 21-31 дні (днів) |
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| GWM120-0075P3-SMD SAM |
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Виробник: IXYS
Description: MOSFET 6N-CH 75V 118A ISOPLUS
Packaging: Tube
Package / Case: 17-SMD, Gull Wing
Mounting Type: Surface Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 75V
Current - Continuous Drain (Id) @ 25°C: 118A
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 60A, 10V
Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: ISOPLUS-DIL™
Part Status: Active
Description: MOSFET 6N-CH 75V 118A ISOPLUS
Packaging: Tube
Package / Case: 17-SMD, Gull Wing
Mounting Type: Surface Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 75V
Current - Continuous Drain (Id) @ 25°C: 118A
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 60A, 10V
Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: ISOPLUS-DIL™
Part Status: Active
товар відсутній
| GWM120-0075X1-SMDSAM |
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Виробник: IXYS
Description: MOSFET 6N-CH 75V 110A ISOPLUS
Packaging: Tube
Package / Case: 17-SMD, Gull Wing
Mounting Type: Surface Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 75V
Current - Continuous Drain (Id) @ 25°C: 110A
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 60A, 10V
Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: ISOPLUS-DIL™
Part Status: Obsolete
Description: MOSFET 6N-CH 75V 110A ISOPLUS
Packaging: Tube
Package / Case: 17-SMD, Gull Wing
Mounting Type: Surface Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 75V
Current - Continuous Drain (Id) @ 25°C: 110A
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 60A, 10V
Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: ISOPLUS-DIL™
Part Status: Obsolete
товар відсутній
| QJ6016LH5TP |
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Виробник: IXYS
Description: 16 AMP STANDARD HIGH TEMPERATURE
Packaging: Tube
Package / Case: TO-220-3 Isolated Tab
Mounting Type: Through Hole
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 50 mA
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 167A, 200A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: ITO-220AB
Part Status: Active
Current - On State (It (RMS)) (Max): 16 A
Voltage - Off State: 600 V
Description: 16 AMP STANDARD HIGH TEMPERATURE
Packaging: Tube
Package / Case: TO-220-3 Isolated Tab
Mounting Type: Through Hole
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 50 mA
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 167A, 200A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: ITO-220AB
Part Status: Active
Current - On State (It (RMS)) (Max): 16 A
Voltage - Off State: 600 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 275.94 грн |
| 10+ | 238.67 грн |
| 100+ | 195.53 грн |
| 500+ | 156.21 грн |
| 1000+ | 131.74 грн |
| IRFP460 |
|
Виробник: IXYS
Description: MOSFET N-CH 500V 20A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 12A, 10V
Power Dissipation (Max): 260W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AD
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
Description: MOSFET N-CH 500V 20A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 12A, 10V
Power Dissipation (Max): 260W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AD
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
товар відсутній
| IRFP450 | |
|
Виробник: IXYS
Description: MOSFET N-CH 500V 14A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 8.4A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AD
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 25 V
Description: MOSFET N-CH 500V 14A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 8.4A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AD
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 25 V
товар відсутній
| DMA10IM1600UZ-TUB |
|
Виробник: IXYS
Description: DIODE GEN PURP 1.6KV 10A TO252AA
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 4pF @ 400V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-252AA
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 1600 V
Description: DIODE GEN PURP 1.6KV 10A TO252AA
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 4pF @ 400V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-252AA
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 1600 V
на замовлення 480 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 128.3 грн |
| 10+ | 111.19 грн |
| 100+ | 89.35 грн |
| IXFH26N65X3 |
товар відсутній
| DPF240X400NA |
|
Виробник: IXYS
Description: DIODE MODULE 400V 120A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 120A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 120 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Description: DIODE MODULE 400V 120A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 120A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 120 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
товар відсутній
| R1127NC32P |
Виробник: IXYS
Description: SCR 3.2KV 2247A W11
Packaging: Box
Package / Case: TO-200AC, K-PUK
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 14100A @ 50Hz
Current - On State (It (AV)) (Max): 1127 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 2.42 V
Current - Off State (Max): 100 mA
Supplier Device Package: W11
Part Status: Discontinued at Digi-Key
Current - On State (It (RMS)) (Max): 2247 A
Voltage - Off State: 3.2 kV
Description: SCR 3.2KV 2247A W11
Packaging: Box
Package / Case: TO-200AC, K-PUK
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 14100A @ 50Hz
Current - On State (It (AV)) (Max): 1127 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 2.42 V
Current - Off State (Max): 100 mA
Supplier Device Package: W11
Part Status: Discontinued at Digi-Key
Current - On State (It (RMS)) (Max): 2247 A
Voltage - Off State: 3.2 kV
товар відсутній
| MCMA140PD1600TB-NI |
Виробник: IXYS
Description: BIPOLAR MODULE THYRISTOR/DIODE T
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 2400A, 2590A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 140 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Part Status: Active
Current - On State (It (RMS)) (Max): 220 A
Voltage - Off State: 1.6 kV
Description: BIPOLAR MODULE THYRISTOR/DIODE T
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 2400A, 2590A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 140 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Part Status: Active
Current - On State (It (RMS)) (Max): 220 A
Voltage - Off State: 1.6 kV
товар відсутній
| IXFJ52N30Q |
товар відсутній
| MIXG240W1200PZTEH |
Виробник: IXYS
Description: IGBT MODULE - SIXPACK E3-PACK-PF
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 200A
NTC Thermistor: Yes
Supplier Device Package: E3
Part Status: Active
Current - Collector (Ic) (Max): 312 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 938 W
Current - Collector Cutoff (Max): 150 µA
Input Capacitance (Cies) @ Vce: 10.6 nF @ 100 V
Description: IGBT MODULE - SIXPACK E3-PACK-PF
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 200A
NTC Thermistor: Yes
Supplier Device Package: E3
Part Status: Active
Current - Collector (Ic) (Max): 312 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 938 W
Current - Collector Cutoff (Max): 150 µA
Input Capacitance (Cies) @ Vce: 10.6 nF @ 100 V
товар відсутній
| MIXG240W1200PTEH |
Виробник: IXYS
Description: IGBT MODULE - SIXPACK E3-PACK-PF
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 200A
NTC Thermistor: Yes
Supplier Device Package: E3
Part Status: Active
Current - Collector (Ic) (Max): 312 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 938 W
Current - Collector Cutoff (Max): 150 µA
Input Capacitance (Cies) @ Vce: 10.6 nF @ 100 V
Description: IGBT MODULE - SIXPACK E3-PACK-PF
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 200A
NTC Thermistor: Yes
Supplier Device Package: E3
Part Status: Active
Current - Collector (Ic) (Max): 312 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 938 W
Current - Collector Cutoff (Max): 150 µA
Input Capacitance (Cies) @ Vce: 10.6 nF @ 100 V
товар відсутній
| MIXG180W1200TEH |
Виробник: IXYS
Description: IGBT MODULE - SIXPACK E3-PACK-PF
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 150A
NTC Thermistor: Yes
Supplier Device Package: E3
Part Status: Active
Current - Collector (Ic) (Max): 280 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 935 W
Current - Collector Cutoff (Max): 500 µA
Input Capacitance (Cies) @ Vce: 8.5 nF @ 100 V
Description: IGBT MODULE - SIXPACK E3-PACK-PF
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 150A
NTC Thermistor: Yes
Supplier Device Package: E3
Part Status: Active
Current - Collector (Ic) (Max): 280 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 935 W
Current - Collector Cutoff (Max): 500 µA
Input Capacitance (Cies) @ Vce: 8.5 nF @ 100 V
товар відсутній
| MIXG240W1200TEH |
Виробник: IXYS
Description: IGBT MODULE - SIXPACK E3-PACK-PF
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 200A
NTC Thermistor: Yes
Supplier Device Package: E3
Part Status: Active
Current - Collector (Ic) (Max): 370 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1250 W
Current - Collector Cutoff (Max): 200 µA
Input Capacitance (Cies) @ Vce: 10.6 nF @ 100 V
Description: IGBT MODULE - SIXPACK E3-PACK-PF
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 200A
NTC Thermistor: Yes
Supplier Device Package: E3
Part Status: Active
Current - Collector (Ic) (Max): 370 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1250 W
Current - Collector Cutoff (Max): 200 µA
Input Capacitance (Cies) @ Vce: 10.6 nF @ 100 V
на замовлення 40 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 16377.37 грн |
| MCNA180P2200YA |
|
Виробник: IXYS
Description: BIPOLAR MODULE - THYRISTOR Y4-M
Packaging: Box
Package / Case: Y4-M6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 5400A, 5830A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 180 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Active
Current - On State (It (RMS)) (Max): 280 A
Voltage - Off State: 2.2 kV
Description: BIPOLAR MODULE - THYRISTOR Y4-M
Packaging: Box
Package / Case: Y4-M6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 5400A, 5830A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 180 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Active
Current - On State (It (RMS)) (Max): 280 A
Voltage - Off State: 2.2 kV
на замовлення 9 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 7693.42 грн |
| MCNA180PD2200YB |
Виробник: IXYS
Description: BIPOLAR MODULE - THYRISTOR Y4-M
Packaging: Box
Package / Case: Y4-M6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 5400A, 5830A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 180 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Active
Current - On State (It (RMS)) (Max): 280 A
Voltage - Off State: 2.2 kV
Description: BIPOLAR MODULE - THYRISTOR Y4-M
Packaging: Box
Package / Case: Y4-M6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 5400A, 5830A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 180 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Active
Current - On State (It (RMS)) (Max): 280 A
Voltage - Off State: 2.2 kV
на замовлення 6 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 7725.67 грн |
| MDD26-08N1B |
|
Виробник: IXYS
Description: DIODE MODULE 800V 36A TO240AA
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 36A
Supplier Device Package: TO-240AA
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.38 V @ 80 A
Current - Reverse Leakage @ Vr: 10 mA @ 800 V
Description: DIODE MODULE 800V 36A TO240AA
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 36A
Supplier Device Package: TO-240AA
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.38 V @ 80 A
Current - Reverse Leakage @ Vr: 10 mA @ 800 V
на замовлення 24 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1746.68 грн |
| 10+ | 1551.13 грн |
| MCMA200P1600YA |
Виробник: IXYS
Description: SCR MODULE 1.6KV 200A MODULE
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 6000A, 6480A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 200 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Part Status: Active
Current - On State (It (RMS)) (Max): 315 A
Voltage - Off State: 1.6 kV
Description: SCR MODULE 1.6KV 200A MODULE
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 6000A, 6480A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 200 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Part Status: Active
Current - On State (It (RMS)) (Max): 315 A
Voltage - Off State: 1.6 kV
на замовлення 6 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 5775.44 грн |
| MDMA140P1800TG |
|
товар відсутній
| IX6611T |
|
Виробник: IXYS
Description: IC MOSF DRIVER
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 13V ~ 25V
Applications: Overvoltage, Undervoltage Protection
Current - Supply: 3mA
Supplier Device Package: 16-SOIC-EP
Part Status: Obsolete
Description: IC MOSF DRIVER
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 13V ~ 25V
Applications: Overvoltage, Undervoltage Protection
Current - Supply: 3mA
Supplier Device Package: 16-SOIC-EP
Part Status: Obsolete
на замовлення 180 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 470.89 грн |
| 10+ | 407.35 грн |
| 25+ | 385.12 грн |
| 100+ | 313.24 грн |
| IX6611TR |
|
Виробник: IXYS
Description: IC MOSF DRIVER
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 13V ~ 25V
Applications: Overvoltage, Undervoltage Protection
Current - Supply: 3mA
Supplier Device Package: 16-SOIC-EP
Part Status: Obsolete
Description: IC MOSF DRIVER
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 13V ~ 25V
Applications: Overvoltage, Undervoltage Protection
Current - Supply: 3mA
Supplier Device Package: 16-SOIC-EP
Part Status: Obsolete
товар відсутній
| IXFY4N85X |
|
Виробник: IXYS
Description: MOSFET N-CH 850V 3.5A TO252
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 2A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 850 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 247 pF @ 25 V
Description: MOSFET N-CH 850V 3.5A TO252
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 2A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 850 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 247 pF @ 25 V
на замовлення 68 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 290.99 грн |
| 10+ | 251.71 грн |
| DLA40IM800PC-TRL |
|
Виробник: IXYS
Description: DIODE GEN PURP 800V 40A TO263AA
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 10pF @ 400V, 1MHz
Current - Average Rectified (Io): 40A
Supplier Device Package: TO-263AA
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 40 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Description: DIODE GEN PURP 800V 40A TO263AA
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 10pF @ 400V, 1MHz
Current - Average Rectified (Io): 40A
Supplier Device Package: TO-263AA
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 40 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
товар відсутній
| DLA40IM800PC-TRL |
|
Виробник: IXYS
Description: DIODE GEN PURP 800V 40A TO263AA
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 10pF @ 400V, 1MHz
Current - Average Rectified (Io): 40A
Supplier Device Package: TO-263AA
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 40 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Description: DIODE GEN PURP 800V 40A TO263AA
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 10pF @ 400V, 1MHz
Current - Average Rectified (Io): 40A
Supplier Device Package: TO-263AA
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 40 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
на замовлення 117 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 321.1 грн |
| 10+ | 277.59 грн |
| 100+ | 227.42 грн |
| IXFX140N60X3 |
товар відсутній
| IXFK140N60X3 |
товар відсутній
| IXFP18N65X3 |
товар відсутній
| IXFP26N65X3 |
товар відсутній
| IXFA26N65X3 |
|
Виробник: IXYS
Description: DISCRETE MOSFET 26A 650V X3 TO26
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 155mOhm @ 500mA, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 5.2V @ 2.5mA
Supplier Device Package: TO-263 (IXFA)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V
Description: DISCRETE MOSFET 26A 650V X3 TO26
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 155mOhm @ 500mA, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 5.2V @ 2.5mA
Supplier Device Package: TO-263 (IXFA)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V
товар відсутній
| MIXG300PF1700TSF |
Виробник: IXYS
Description: IGBT MODULE - PHASELEG SIMBUS F-
Packaging: Box
Package / Case: SimBus F
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
NTC Thermistor: No
Supplier Device Package: SimBus F
IGBT Type: PT
Description: IGBT MODULE - PHASELEG SIMBUS F-
Packaging: Box
Package / Case: SimBus F
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
NTC Thermistor: No
Supplier Device Package: SimBus F
IGBT Type: PT
на замовлення 3 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 14348.53 грн |
| N0465WN140 |
Виробник: IXYS
Description: SCR 1.4KV 920A W90
Packaging: Box
Package / Case: TO-200AB, B-PuK
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -60°C ~ 125°C
Current - Hold (Ih) (Max): 250 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 5000A @ 50Hz
Current - On State (It (AV)) (Max): 465 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Voltage - On State (Vtm) (Max): 2.09 V
Current - Off State (Max): 50 mA
Supplier Device Package: W90
Current - On State (It (RMS)) (Max): 920 A
Voltage - Off State: 1.4 kV
Description: SCR 1.4KV 920A W90
Packaging: Box
Package / Case: TO-200AB, B-PuK
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -60°C ~ 125°C
Current - Hold (Ih) (Max): 250 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 5000A @ 50Hz
Current - On State (It (AV)) (Max): 465 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Voltage - On State (Vtm) (Max): 2.09 V
Current - Off State (Max): 50 mA
Supplier Device Package: W90
Current - On State (It (RMS)) (Max): 920 A
Voltage - Off State: 1.4 kV
товар відсутній
| IXYH40N120C4H1 |
|
Виробник: IXYS
Description: IGBT TRENCH 1200V 110A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 380 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 32A
Supplier Device Package: TO-247 (IXYH)
IGBT Type: Trench
Td (on/off) @ 25°C: 21ns/140ns
Switching Energy: 5.55mJ (on), 1.55mJ (off)
Test Condition: 960V, 32A, 5Ohm, 15V
Gate Charge: 92 nC
Current - Collector (Ic) (Max): 110 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 230 A
Power - Max: 680 W
Description: IGBT TRENCH 1200V 110A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 380 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 32A
Supplier Device Package: TO-247 (IXYH)
IGBT Type: Trench
Td (on/off) @ 25°C: 21ns/140ns
Switching Energy: 5.55mJ (on), 1.55mJ (off)
Test Condition: 960V, 32A, 5Ohm, 15V
Gate Charge: 92 nC
Current - Collector (Ic) (Max): 110 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 230 A
Power - Max: 680 W
товар відсутній
| E1250HC45E |
Виробник: IXYS
Description: DIODE GEN PURP 4.5KV 1355A W122
Packaging: Box
Package / Case: DO-200AD
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.2 µs
Technology: Standard
Current - Average Rectified (Io): 1355A
Supplier Device Package: W122
Voltage - DC Reverse (Vr) (Max): 4500 V
Voltage - Forward (Vf) (Max) @ If: 2.07 V @ 1250 A
Current - Reverse Leakage @ Vr: 1 mA @ 4500 V
Description: DIODE GEN PURP 4.5KV 1355A W122
Packaging: Box
Package / Case: DO-200AD
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.2 µs
Technology: Standard
Current - Average Rectified (Io): 1355A
Supplier Device Package: W122
Voltage - DC Reverse (Vr) (Max): 4500 V
Voltage - Forward (Vf) (Max) @ If: 2.07 V @ 1250 A
Current - Reverse Leakage @ Vr: 1 mA @ 4500 V
товар відсутній
| DCG45X1200NA |
|
Виробник: IXYS
Description: DIODE MOD SIC 1200V 22A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 22A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
Description: DIODE MOD SIC 1200V 22A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 22A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
на замовлення 4 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 6257.09 грн |
| DNA30EM2200PZ-TUB |
|
Виробник: IXYS
Description: DIODE GEN PURP 2.2KV 30A TO263HV
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 7pF @ 700V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263HV
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 2200 V
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 30 A
Current - Reverse Leakage @ Vr: 40 µA @ 2200 V
Description: DIODE GEN PURP 2.2KV 30A TO263HV
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 7pF @ 700V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263HV
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 2200 V
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 30 A
Current - Reverse Leakage @ Vr: 40 µA @ 2200 V
на замовлення 500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 379.15 грн |
| 50+ | 289.41 грн |
| 100+ | 248.06 грн |
| 500+ | 206.93 грн |
| K2325TJ600 |
|
Виробник: IXYS
Description: SCR 6KV 4625A W81
Packaging: Box
Package / Case: TO-200AF
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 36300A @ 50Hz
Current - On State (It (AV)) (Max): 2380 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 4.2 V
Current - Off State (Max): 200 mA
Supplier Device Package: W81
Current - On State (It (RMS)) (Max): 4625 A
Voltage - Off State: 6 kV
Description: SCR 6KV 4625A W81
Packaging: Box
Package / Case: TO-200AF
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 36300A @ 50Hz
Current - On State (It (AV)) (Max): 2380 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 4.2 V
Current - Off State (Max): 200 mA
Supplier Device Package: W81
Current - On State (It (RMS)) (Max): 4625 A
Voltage - Off State: 6 kV
товар відсутній
| K2325TJ650 |
|
Виробник: IXYS
Description: SCR 6.5KV 4625A W81
Packaging: Box
Package / Case: TO-200AF
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 36300A @ 50Hz
Current - On State (It (AV)) (Max): 2380 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 4.2 V
Current - Off State (Max): 200 mA
Supplier Device Package: W81
Current - On State (It (RMS)) (Max): 4625 A
Voltage - Off State: 6.5 kV
Description: SCR 6.5KV 4625A W81
Packaging: Box
Package / Case: TO-200AF
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 36300A @ 50Hz
Current - On State (It (AV)) (Max): 2380 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 4.2 V
Current - Off State (Max): 200 mA
Supplier Device Package: W81
Current - On State (It (RMS)) (Max): 4625 A
Voltage - Off State: 6.5 kV
товар відсутній
| IXFH67N10Q |
|
Виробник: IXYS
Description: MOSFET N-CH 100V 67A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 33.5A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
Description: MOSFET N-CH 100V 67A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 33.5A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
товар відсутній
| IXYA20N120C4HV-TRL |
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 800+ | 191.44 грн |
| 1600+ | 157.85 грн |
| MCNA220P2200YA |
|
Виробник: IXYS
Description: BIPOLAR MODULE - THYRISTOR Y4-M
Packaging: Box
Package / Case: Y4-M6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 7200A, 7780A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 220 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 345 A
Voltage - Off State: 2.2 kV
Description: BIPOLAR MODULE - THYRISTOR Y4-M
Packaging: Box
Package / Case: Y4-M6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 7200A, 7780A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 220 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 345 A
Voltage - Off State: 2.2 kV
на замовлення 5 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 8866 грн |
| MCNA150P2200YA |
|
Виробник: IXYS
Description: BIPOLAR MODULE - THYRISTOR Y4-M
Packaging: Box
Package / Case: Y4-M6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 4300A, 4650A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 150 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 235 A
Voltage - Off State: 2.2 kV
Description: BIPOLAR MODULE - THYRISTOR Y4-M
Packaging: Box
Package / Case: Y4-M6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 4300A, 4650A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 150 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 235 A
Voltage - Off State: 2.2 kV
на замовлення 6 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 7399.56 грн |
| IXFA18N65X3 |
товар відсутній
| MDD56-12N1B |
|
Виробник: IXYS
Description: DIODE MOD GP 1.2KV 95A TO240AA
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 95A
Supplier Device Package: TO-240AA
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.48 V @ 200 A
Current - Reverse Leakage @ Vr: 10 mA @ 1200 V
Description: DIODE MOD GP 1.2KV 95A TO240AA
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 95A
Supplier Device Package: TO-240AA
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.48 V @ 200 A
Current - Reverse Leakage @ Vr: 10 mA @ 1200 V
на замовлення 35 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1910.1 грн |
| 10+ | 1634.57 грн |
| IXYX300N65A3 |
Виробник: IXYS
Description: DISC IGBT XPT-GENX3 TO-247AD
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 125 ns
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 100A
Supplier Device Package: PLUS247™-3
IGBT Type: PT
Td (on/off) @ 25°C: 42ns/190ns
Switching Energy: 7.8mJ (on), 4.7mJ (off)
Test Condition: 400V, 100A, 1Ohm, 15V
Gate Charge: 565 nC
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 1460 A
Power - Max: 2300 W
Description: DISC IGBT XPT-GENX3 TO-247AD
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 125 ns
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 100A
Supplier Device Package: PLUS247™-3
IGBT Type: PT
Td (on/off) @ 25°C: 42ns/190ns
Switching Energy: 7.8mJ (on), 4.7mJ (off)
Test Condition: 400V, 100A, 1Ohm, 15V
Gate Charge: 565 nC
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 1460 A
Power - Max: 2300 W
товар відсутній
| IXTB1909 |
Виробник: IXYS
Description: POWER MOSFET 500V 100AMP
Description: POWER MOSFET 500V 100AMP
на замовлення 19470 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1669.99 грн |
| 10+ | 1483.49 грн |
| 100+ | 1266.77 грн |
| 500+ | 1079.32 грн |
| IXFX120N60X3 |
товар відсутній
| IXFK120N60X3 |
товар відсутній
| IXFN120N60X3 |
товар відсутній
| QJ8030NH4RP |
Виробник: IXYS
Description: TRIAC ALTERNISTOR 800V 30A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 60 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 290A, 350A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: TO-263 (D2Pak)
Current - On State (It (RMS)) (Max): 30 A
Voltage - Off State: 800 V
Description: TRIAC ALTERNISTOR 800V 30A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 60 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 290A, 350A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: TO-263 (D2Pak)
Current - On State (It (RMS)) (Max): 30 A
Voltage - Off State: 800 V
на замовлення 980 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 424.31 грн |
| 10+ | 343.02 грн |
| 100+ | 277.48 грн |
| QJ8030NH4RP |
Виробник: IXYS
Description: TRIAC ALTERNISTOR 800V 30A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 60 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 290A, 350A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: TO-263 (D2Pak)
Current - On State (It (RMS)) (Max): 30 A
Voltage - Off State: 800 V
Description: TRIAC ALTERNISTOR 800V 30A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 60 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 290A, 350A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: TO-263 (D2Pak)
Current - On State (It (RMS)) (Max): 30 A
Voltage - Off State: 800 V
на замовлення 500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 500+ | 256.14 грн |
| QV6012RH4TP |
|
Виробник: IXYS
Description: TRIAC SENS GATE 600V 12A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 50 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 140A, 153A
Voltage - Gate Trigger (Vgt) (Max): 1.2 V
Supplier Device Package: TO-220
Current - On State (It (RMS)) (Max): 12 A
Voltage - Off State: 600 V
Description: TRIAC SENS GATE 600V 12A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 50 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 140A, 153A
Voltage - Gate Trigger (Vgt) (Max): 1.2 V
Supplier Device Package: TO-220
Current - On State (It (RMS)) (Max): 12 A
Voltage - Off State: 600 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 188.5 грн |
| 10+ | 152.05 грн |
| 100+ | 122.98 грн |
| 500+ | 102.6 грн |
| 1000+ | 87.85 грн |
| QV6012LH4TP |
|
Виробник: IXYS
Description: TRIAC SENS GATE 600V 12A ITO220
Packaging: Tube
Package / Case: TO-220-3 Isolated Tab
Mounting Type: Through Hole
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 50 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 140A, 153A
Voltage - Gate Trigger (Vgt) (Max): 1.2 V
Supplier Device Package: ITO-220AB
Current - On State (It (RMS)) (Max): 12 A
Voltage - Off State: 600 V
Description: TRIAC SENS GATE 600V 12A ITO220
Packaging: Tube
Package / Case: TO-220-3 Isolated Tab
Mounting Type: Through Hole
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 50 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 140A, 153A
Voltage - Gate Trigger (Vgt) (Max): 1.2 V
Supplier Device Package: ITO-220AB
Current - On State (It (RMS)) (Max): 12 A
Voltage - Off State: 600 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 197.1 грн |
| 10+ | 159.5 грн |
| 100+ | 129.02 грн |
| 500+ | 107.63 грн |
| 1000+ | 92.16 грн |
| QV6012LH5TP |
|
Виробник: IXYS
Description: TRIAC SENS GATE 600V 12A ITO220
Packaging: Tube
Package / Case: TO-220-3 Isolated Tab
Mounting Type: Through Hole
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 50 mA
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 140A, 153A
Voltage - Gate Trigger (Vgt) (Max): 1.2 V
Supplier Device Package: ITO-220AB
Current - On State (It (RMS)) (Max): 12 A
Voltage - Off State: 600 V
Description: TRIAC SENS GATE 600V 12A ITO220
Packaging: Tube
Package / Case: TO-220-3 Isolated Tab
Mounting Type: Through Hole
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 50 mA
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 140A, 153A
Voltage - Gate Trigger (Vgt) (Max): 1.2 V
Supplier Device Package: ITO-220AB
Current - On State (It (RMS)) (Max): 12 A
Voltage - Off State: 600 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 199.25 грн |
| 10+ | 160.95 грн |
| 100+ | 130.23 грн |
| 500+ | 108.64 грн |
| 1000+ | 93.02 грн |
| QV6012NH4TP |
|
Виробник: IXYS
Description: TRIAC SENS GATE 600V 12A TO263
Packaging: Tube
Mounting Type: Surface Mount
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 50 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 140A, 153A
Voltage - Gate Trigger (Vgt) (Max): 1.2 V
Supplier Device Package: TO-263 (D2Pak)
Current - On State (It (RMS)) (Max): 12 A
Voltage - Off State: 600 V
Description: TRIAC SENS GATE 600V 12A TO263
Packaging: Tube
Mounting Type: Surface Mount
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 50 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 140A, 153A
Voltage - Gate Trigger (Vgt) (Max): 1.2 V
Supplier Device Package: TO-263 (D2Pak)
Current - On State (It (RMS)) (Max): 12 A
Voltage - Off State: 600 V
на замовлення 995 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 221.47 грн |
| 10+ | 178.9 грн |
| 100+ | 144.73 грн |
| 500+ | 120.73 грн |
| QV6012NH5TP |
|
Виробник: IXYS
Description: TRIAC SENS GATE 600V 12A TO263
Packaging: Tube
Mounting Type: Surface Mount
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 50 mA
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 140A, 153A
Voltage - Gate Trigger (Vgt) (Max): 1.2 V
Supplier Device Package: TO-263 (D2Pak)
Current - On State (It (RMS)) (Max): 12 A
Voltage - Off State: 600 V
Description: TRIAC SENS GATE 600V 12A TO263
Packaging: Tube
Mounting Type: Surface Mount
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 50 mA
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 140A, 153A
Voltage - Gate Trigger (Vgt) (Max): 1.2 V
Supplier Device Package: TO-263 (D2Pak)
Current - On State (It (RMS)) (Max): 12 A
Voltage - Off State: 600 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 223.62 грн |
| 10+ | 180.48 грн |
| 100+ | 146 грн |
| 500+ | 121.8 грн |
| 1000+ | 104.29 грн |
| DCG85X1200NA |
|
Виробник: IXYS
Description: DIODE MOD SCHOTTKY 1200V SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 43A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 40 A
Current - Reverse Leakage @ Vr: 400 µA @ 1200 V
Description: DIODE MOD SCHOTTKY 1200V SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 43A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 40 A
Current - Reverse Leakage @ Vr: 400 µA @ 1200 V
на замовлення 40 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 10285.13 грн |
| 10+ | 9276.41 грн |