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MIAA10WB600TMH IXYS MIAA10WB600TMH.pdf Description: MODULE IGBT CBI
товар відсутній
MIAA10WD600TMH IXYS MIAA10WD600TMH.pdf Description: IGBT MOD 600V 18A 70W MINIPACK2
Packaging: Box
Package / Case: MiniPack2
Mounting Type: Chassis Mount
Input: Single Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 10A
NTC Thermistor: Yes
Supplier Device Package: MiniPack2
IGBT Type: NPT
Part Status: Obsolete
Current - Collector (Ic) (Max): 18 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 70 W
Current - Collector Cutoff (Max): 600 µA
Input Capacitance (Cies) @ Vce: 450 pF @ 25 V
товар відсутній
MIAA10WE600TMH IXYS MIAA10WE600TMH.pdf Description: MODULE IGBT CBI
товар відсутній
MIAA10WF600TMH IXYS MIAA10WF600TMH.pdf Description: MODULE IGBT CBI
товар відсутній
MIAA15WB600TMH IXYS MIAA15WB600TMH.pdf Description: MODULE IGBT CBI
товар відсутній
MIAA15WD600TMH IXYS MIAA15WD600TMH.pdf Description: IGBT MOD 600V 23A 80W MINIPACK2
Packaging: Box
Package / Case: MiniPack2
Mounting Type: Chassis Mount
Input: Single Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
NTC Thermistor: Yes
Supplier Device Package: MiniPack2
IGBT Type: NPT
Part Status: Obsolete
Current - Collector (Ic) (Max): 23 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 80 W
Current - Collector Cutoff (Max): 600 µA
Input Capacitance (Cies) @ Vce: 700 pF @ 25 V
товар відсутній
MIAA15WE600TMH IXYS MIAA15WE600TMH.pdf Description: MODULE IGBT CBI
товар відсутній
MIAA20WB600TMH IXYS MIAA20WB600TMH.pdf Description: MODULE IGBT CBI
товар відсутній
MIAA20WD600TMH IXYS MIAA20WD600TMH.pdf Description: IGBT MOD 600V 29A 100W MINIPACK2
Packaging: Box
Package / Case: MiniPack2
Mounting Type: Chassis Mount
Input: Single Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 20A
NTC Thermistor: Yes
Supplier Device Package: MiniPack2
IGBT Type: NPT
Part Status: Obsolete
Current - Collector (Ic) (Max): 29 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 100 W
Current - Collector Cutoff (Max): 1.1 mA
Input Capacitance (Cies) @ Vce: 900 pF @ 25 V
товар відсутній
MIAA20WE600TMH IXYS MIAA20WE600TMH.pdf Description: MODULE IGBT CBI
товар відсутній
MII300-12E4 IXYS MII300-12E4.pdf Description: IGBT MOD 1200V 280A 1100W Y3LI
Packaging: Box
Package / Case: Y3-Li
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 200A
NTC Thermistor: No
Supplier Device Package: Y3-Li
IGBT Type: NPT
Current - Collector (Ic) (Max): 280 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1100 W
Current - Collector Cutoff (Max): 3.3 mA
Input Capacitance (Cies) @ Vce: 11 nF @ 25 V
товар відсутній
MITA10WB1200TMH IXYS MITA10WB1200TMH.pdf Description: MODULE IGBT CBI
товар відсутній
MITA15WB1200TMH IXYS MITA15WB1200TMH.pdf Description: MODULE IGBT CBI
товар відсутній
MITB10WB1200TMH IXYS MITB10WB1200TMH.pdf Description: MODULE IGBT CBI
товар відсутній
MITB15WB1200TMH IXYS MITB15WB1200TMH.pdf Description: MODULE IGBT CBI
товар відсутній
MKI100-12F8 IXYS MKI100-12F8.pdf Description: IGBT MODULE 1200V 125A 640W E3
Packaging: Box
Package / Case: E3
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: E3
IGBT Type: NPT
Part Status: Active
Current - Collector (Ic) (Max): 125 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 640 W
Current - Collector Cutoff (Max): 1.3 mA
Input Capacitance (Cies) @ Vce: 6.5 nF @ 25 V
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
1+10255.17 грн
MKI50-12F7 IXYS MKI50-12F7.pdf Description: IGBT MODULE 1200V 65A 350W E2
Packaging: Box
Package / Case: E2
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.8V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: E2
IGBT Type: NPT
Part Status: Active
Current - Collector (Ic) (Max): 65 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 350 W
Current - Collector Cutoff (Max): 700 µA
Input Capacitance (Cies) @ Vce: 3.3 nF @ 25 V
на замовлення 6 шт:
термін постачання 21-31 дні (днів)
1+7228.46 грн
MKI80-06T6K IXYS MKI80-06T6K.pdf Description: IGBT MODULE 600V 89A 210W E1
Packaging: Box
Package / Case: E1
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: E1
IGBT Type: Trench
Current - Collector (Ic) (Max): 89 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 210 W
Current - Collector Cutoff (Max): 500 µA
Input Capacitance (Cies) @ Vce: 4.62 nF @ 25 V
товар відсутній
MUBW15-12T7 IXYS MUBW15-12T7.pdf Description: IGBT MODULE 1200V 30A 140W E2
товар відсутній
MUBW25-12T7 IXYS MUBW25-12T7.pdf Description: IGBT MODULE 1200V 45A 170W E2
товар відсутній
MUBW40-12T7 IXYS MUBW40-12T7.pdf Description: IGBT MODULE 1200V 62A 220W E2
Packaging: Box
Package / Case: E2
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter with Brake
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 40A
NTC Thermistor: Yes
Supplier Device Package: E2
IGBT Type: Trench
Current - Collector (Ic) (Max): 62 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 220 W
Current - Collector Cutoff (Max): 1.75 mA
Input Capacitance (Cies) @ Vce: 2.5 nF @ 25 V
товар відсутній
MUBW45-12T6K IXYS MUBW45-12T6K.pdf Description: IGBT MODULE 1200V 43A 160W E1
товар відсутній
MUBW50-12T8 IXYS MUBW50-12T8.pdf Description: IGBT MODULE 1200V 80A 270W E3
Packaging: Box
Package / Case: E3
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter with Brake
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: E3
IGBT Type: Trench
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 270 W
Current - Collector Cutoff (Max): 2.7 mA
Input Capacitance (Cies) @ Vce: 3.5 nF @ 25 V
товар відсутній
MUBW50-17T8 IXYS MUBW50-17T8.pdf Description: IGBT MODULE 1700V 74A 290W E3
Packaging: Box
Package / Case: E3
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter with Brake
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: E3
IGBT Type: Trench
Current - Collector (Ic) (Max): 74 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 290 W
Current - Collector Cutoff (Max): 400 µA
Input Capacitance (Cies) @ Vce: 4.4 nF @ 25 V
товар відсутній
MUBW75-12T8 IXYS MUBW75-12T8.pdf Description: IGBT MODULE 1200V 110A 355W E3
Packaging: Box
Package / Case: E3
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter with Brake
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: E3
IGBT Type: Trench
Part Status: Active
Current - Collector (Ic) (Max): 110 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 355 W
Current - Collector Cutoff (Max): 4 mA
Input Capacitance (Cies) @ Vce: 5.35 nF @ 25 V
товар відсутній
MUBW75-17T8 IXYS MUBW75-17T8.pdf Description: IGBT MODULE 1700V 113A 450W E3
Packaging: Box
Package / Case: E3
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter with Brake
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: E3
IGBT Type: Trench
Part Status: Active
Current - Collector (Ic) (Max): 113 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 450 W
Current - Collector Cutoff (Max): 800 µA
Input Capacitance (Cies) @ Vce: 6.6 nF @ 25 V
товар відсутній
MWI100-12T8T IXYS MWI100-12T8T.pdf Description: MOD IGBT TRENCH SIXPACK E3
товар відсутній
MWI150-12T8T IXYS MWI150-12T8T.pdf Description: MOD IGBT TRENCH SIXPACK E3
товар відсутній
MWI15-12A6K IXYS MWI15-12A6K.pdf Description: MOD IGBT RBSOA SIXPACK E1
товар відсутній
MWI225-12E9 IXYS MWI225-12E9.pdf Description: MOD IGBT SIXPACK E+
товар відсутній
MWI225-17E9 IXYS MWI225-17E9.pdf Description: IGBT MODULE 1700V 335A 1400W E+
Packaging: Box
Package / Case: E+
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 225A
NTC Thermistor: Yes
Supplier Device Package: E+
IGBT Type: NPT
Part Status: Active
Current - Collector (Ic) (Max): 335 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 1400 W
Current - Collector Cutoff (Max): 600 µA
Input Capacitance (Cies) @ Vce: 22 nF @ 25 V
товар відсутній
MWI300-12E9 IXYS MWI300-12E9.pdf Description: IGBT MODULE 1200V 530A 2100W E+
Packaging: Box
Package / Case: E+
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 300A
NTC Thermistor: Yes
Supplier Device Package: E+
IGBT Type: NPT
Part Status: Obsolete
Current - Collector (Ic) (Max): 530 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 2100 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 22 nF @ 25 V
товар відсутній
MWI300-17E9 IXYS MWI300-17E9.pdf Description: IGBT MODULE 1700V 500A 2200W E+
Packaging: Box
Package / Case: E+
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 300A
NTC Thermistor: Yes
Supplier Device Package: E+
IGBT Type: NPT
Part Status: Active
Current - Collector (Ic) (Max): 500 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 2200 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 33 nF @ 25 V
товар відсутній
MWI450-12E9 IXYS MWI450-12E9.pdf Description: IGBT MODULE 1200V 640A 2200W E+
Packaging: Box
Package / Case: E+
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 450A
NTC Thermistor: Yes
Supplier Device Package: E+
IGBT Type: NPT
Part Status: Obsolete
Current - Collector (Ic) (Max): 640 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 2200 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 33 nF @ 25 V
товар відсутній
MWI50-12T7T IXYS MWI50-12T7T.pdf Description: IGBT MODULE 1200V 80A 270W E2
Packaging: Box
Package / Case: E2
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: E2
IGBT Type: Trench
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 270 W
Current - Collector Cutoff (Max): 4 mA
Input Capacitance (Cies) @ Vce: 3.5 nF @ 25 V
товар відсутній
MWI60-06G6K IXYS MWI60-06G6K.pdf Description: IGBT MODULE 600V 60A 180W E1
Packaging: Box
Package / Case: E1
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 30A
NTC Thermistor: Yes
Supplier Device Package: E1
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 180 W
Current - Collector Cutoff (Max): 200 µA
Input Capacitance (Cies) @ Vce: 2.5 nF @ 25 V
товар відсутній
MWI75-12T7T IXYS MWI75-12T7T.pdf Description: IGBT MOD TRENCH SIX-PACK E3
товар відсутній
MWI75-12T8T IXYS MWI75-12T8T.pdf Description: IGBT MOD TRENCH SIX-PACK E3
товар відсутній
VUB135-22NO1 IXYS VUB135-22NO1.pdf Description: BRIDGE RECT 3P 2.2KV 150A E2
товар відсутній
IXFH160N15T IXFH160N15T IXYS littelfuse_discrete_mosfets_n-channel_trench_gate_ixfh160n15t_datasheet.pdf.pdf Description: MOSFET N-CH 150V 160A TO247AD
товар відсутній
IXTA100N04T2 IXTA100N04T2 IXYS DS99972A(IXTA-TP100N04T2).pdf Description: MOSFET N-CH 40V 100A TO263
товар відсутній
IXTA102N15T IXTA102N15T IXYS DS99661B(IXTA-TH-TP-TQ102N15T).pdf Description: MOSFET N-CH 150V 102A TO263
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 102A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 500mA, 10V
Power Dissipation (Max): 455W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5220 pF @ 25 V
на замовлення 570 шт:
термін постачання 21-31 дні (днів)
1+313.06 грн
10+ 270.78 грн
100+ 221.84 грн
500+ 177.23 грн
IXTA10P50P IXTA10P50P IXYS littelfuse_discrete_mosfets_p-channel_ixt_10p50p_datasheet.pdf.pdf Description: MOSFET P-CH 500V 10A TO263
Packaging: Tube
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 5A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 25 V
товар відсутній
IXTA110N055T2 IXTA110N055T2 IXYS littelfuse_discrete_mosfets_n-channel_trench_gate_ixt_110n055t2_datasheet.pdf.pdf Description: MOSFET N-CH 55V 110A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 6.6mOhm @ 25A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3060 pF @ 25 V
на замовлення 400 шт:
термін постачання 21-31 дні (днів)
2+186.01 грн
50+ 141.92 грн
100+ 121.64 грн
Мінімальне замовлення: 2
IXTA120N04T2 IXTA120N04T2 IXYS littelfuse_discrete_mosfets_n-channel_trench_gate_ixt_120n04t2_datasheet.pdf.pdf Description: MOSFET N-CH 40V 120A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 25A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 25 V
на замовлення 1950 шт:
термін постачання 21-31 дні (днів)
300+118.09 грн
Мінімальне замовлення: 300
IXTA170N075T2 IXTA170N075T2 IXYS 99970A.pdf Description: MOSFET N-CH 75V 170A TO263
на замовлення 2050 шт:
термін постачання 21-31 дні (днів)
IXTA18P10T IXTA18P10T IXYS DS99966D(IXTY-TA-TP18P10T).pdf Description: MOSFET P-CH 100V 18A TO-263
товар відсутній
IXTA200N055T2 IXTA200N055T2 IXYS DS99919B(IXTA-TP200N055T2).pdf Description: MOSFET N-CH 55V 200A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 50A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 25 V
на замовлення 1050 шт:
термін постачання 21-31 дні (днів)
2+263.22 грн
50+ 201.05 грн
100+ 172.33 грн
500+ 143.75 грн
1000+ 123.09 грн
Мінімальне замовлення: 2
IXTA220N04T2 IXTA220N04T2 IXYS 99918B.pdf Description: MOSFET N-CH 40V 220A TO-263
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 220A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 50A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6820 pF @ 25 V
товар відсутній
IXTA220N04T2-7 IXTA220N04T2-7 IXYS littelfuse_discrete_mosfets_n-channel_trench_gate_ixta220n04t2-7_datasheet.pdf.pdf Description: MOSFET N-CH 40V 220A TO263-7
Packaging: Tube
Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 220A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 50A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7 (IXTA)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6820 pF @ 25 V
товар відсутній
IXTA24P085T IXTA24P085T IXYS littelfuse_discrete_mosfets_p-channel_ixt_24p085t_datasheet.pdf.pdf Description: MOSFET P-CH 85V 24A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 12A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 85 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2090 pF @ 25 V
на замовлення 3324 шт:
термін постачання 21-31 дні (днів)
2+175.48 грн
50+ 134.04 грн
100+ 114.87 грн
500+ 95.83 грн
1000+ 82.05 грн
2000+ 77.26 грн
Мінімальне замовлення: 2
IXTA26P20P IXTA26P20P IXYS IX%28T%2CH%2CP%2CQ%29A26P20P.pdf Description: MOSFET P-CH 200V 26A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 13A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2740 pF @ 25 V
товар відсутній
IXTA28P065T IXTA28P065T IXYS DS99968B(IXTA-TP28P065T).pdf Description: MOSFET P-CH 65V 28A TO-263
на замовлення 9 шт:
термін постачання 21-31 дні (днів)
IXTA32N20T IXTA32N20T IXYS littelfuse_discrete_mosfets_n-channel_trench_gate_ixt_32n20t_datasheet.pdf.pdf Description: MOSFET N-CH 200V 32A TO263
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 72mOhm @ 16A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1760 pF @ 25 V
товар відсутній
IXTA32P05T IXTA32P05T IXYS littelfuse_discrete_mosfets_p-channel_ixt_32p05t_datasheet.pdf.pdf Description: MOSFET P-CH 50V 32A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 500mA, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1975 pF @ 25 V
на замовлення 128 шт:
термін постачання 21-31 дні (днів)
2+175.48 грн
50+ 134.04 грн
100+ 114.87 грн
Мінімальне замовлення: 2
IXTA44P15T IXTA44P15T IXYS littelfuse_discrete_mosfets_p-channel_ixt_44p15t_datasheet.pdf.pdf Description: MOSFET P-CH 150V 44A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 22A, 10V
Power Dissipation (Max): 298W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 175 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13400 pF @ 25 V
на замовлення 2769 шт:
термін постачання 21-31 дні (днів)
1+405.71 грн
50+ 312.1 грн
100+ 279.25 грн
500+ 231.23 грн
1000+ 208.11 грн
2000+ 195 грн
IXTA48N20T IXTA48N20T IXYS littelfuse_discrete_mosfets_n-channel_trench_gate_ixt_48n20t_datasheet.pdf.pdf Description: MOSFET N-CH 200V 48A TO263
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 24A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3090 pF @ 25 V
на замовлення 1050 шт:
термін постачання 21-31 дні (днів)
2+277.96 грн
10+ 225.22 грн
100+ 182.22 грн
Мінімальне замовлення: 2
IXTA52P10P IXTA52P10P IXYS DS99912A(IXTA-H-P-Q52P10P).pdf Description: MOSFET P-CH 100V 52A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 52A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2845 pF @ 25 V
на замовлення 1821 шт:
термін постачання 21-31 дні (днів)
1+428.88 грн
50+ 329.92 грн
100+ 295.19 грн
500+ 244.43 грн
1000+ 219.99 грн
IXTA70N075T2 IXTA70N075T2 IXYS littelfuse_discrete_mosfets_n-channel_trench_gate_ixt_70n075t2_datasheet.pdf.pdf Description: MOSFET N-CH 75V 70A TO263
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 25A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2725 pF @ 25 V
товар відсутній
IXTA76P10T IXTA76P10T IXYS littelfuse_discrete_mosfets_p-channel_ixt_76p10t_datasheet.pdf.pdf Description: MOSFET P-CH 100V 76A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 38A, 10V
Power Dissipation (Max): 298W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 197 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13700 pF @ 25 V
на замовлення 3480 шт:
термін постачання 21-31 дні (днів)
1+405.71 грн
50+ 312.1 грн
100+ 279.25 грн
500+ 231.23 грн
1000+ 208.11 грн
2000+ 195 грн
MIAA10WB600TMH MIAA10WB600TMH.pdf
Виробник: IXYS
Description: MODULE IGBT CBI
товар відсутній
MIAA10WD600TMH MIAA10WD600TMH.pdf
Виробник: IXYS
Description: IGBT MOD 600V 18A 70W MINIPACK2
Packaging: Box
Package / Case: MiniPack2
Mounting Type: Chassis Mount
Input: Single Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 10A
NTC Thermistor: Yes
Supplier Device Package: MiniPack2
IGBT Type: NPT
Part Status: Obsolete
Current - Collector (Ic) (Max): 18 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 70 W
Current - Collector Cutoff (Max): 600 µA
Input Capacitance (Cies) @ Vce: 450 pF @ 25 V
товар відсутній
MIAA10WE600TMH MIAA10WE600TMH.pdf
Виробник: IXYS
Description: MODULE IGBT CBI
товар відсутній
MIAA10WF600TMH MIAA10WF600TMH.pdf
Виробник: IXYS
Description: MODULE IGBT CBI
товар відсутній
MIAA15WB600TMH MIAA15WB600TMH.pdf
Виробник: IXYS
Description: MODULE IGBT CBI
товар відсутній
MIAA15WD600TMH MIAA15WD600TMH.pdf
Виробник: IXYS
Description: IGBT MOD 600V 23A 80W MINIPACK2
Packaging: Box
Package / Case: MiniPack2
Mounting Type: Chassis Mount
Input: Single Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
NTC Thermistor: Yes
Supplier Device Package: MiniPack2
IGBT Type: NPT
Part Status: Obsolete
Current - Collector (Ic) (Max): 23 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 80 W
Current - Collector Cutoff (Max): 600 µA
Input Capacitance (Cies) @ Vce: 700 pF @ 25 V
товар відсутній
MIAA15WE600TMH MIAA15WE600TMH.pdf
Виробник: IXYS
Description: MODULE IGBT CBI
товар відсутній
MIAA20WB600TMH MIAA20WB600TMH.pdf
Виробник: IXYS
Description: MODULE IGBT CBI
товар відсутній
MIAA20WD600TMH MIAA20WD600TMH.pdf
Виробник: IXYS
Description: IGBT MOD 600V 29A 100W MINIPACK2
Packaging: Box
Package / Case: MiniPack2
Mounting Type: Chassis Mount
Input: Single Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 20A
NTC Thermistor: Yes
Supplier Device Package: MiniPack2
IGBT Type: NPT
Part Status: Obsolete
Current - Collector (Ic) (Max): 29 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 100 W
Current - Collector Cutoff (Max): 1.1 mA
Input Capacitance (Cies) @ Vce: 900 pF @ 25 V
товар відсутній
MIAA20WE600TMH MIAA20WE600TMH.pdf
Виробник: IXYS
Description: MODULE IGBT CBI
товар відсутній
MII300-12E4 MII300-12E4.pdf
Виробник: IXYS
Description: IGBT MOD 1200V 280A 1100W Y3LI
Packaging: Box
Package / Case: Y3-Li
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 200A
NTC Thermistor: No
Supplier Device Package: Y3-Li
IGBT Type: NPT
Current - Collector (Ic) (Max): 280 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1100 W
Current - Collector Cutoff (Max): 3.3 mA
Input Capacitance (Cies) @ Vce: 11 nF @ 25 V
товар відсутній
MITA10WB1200TMH MITA10WB1200TMH.pdf
Виробник: IXYS
Description: MODULE IGBT CBI
товар відсутній
MITA15WB1200TMH MITA15WB1200TMH.pdf
Виробник: IXYS
Description: MODULE IGBT CBI
товар відсутній
MITB10WB1200TMH MITB10WB1200TMH.pdf
Виробник: IXYS
Description: MODULE IGBT CBI
товар відсутній
MITB15WB1200TMH MITB15WB1200TMH.pdf
Виробник: IXYS
Description: MODULE IGBT CBI
товар відсутній
MKI100-12F8 MKI100-12F8.pdf
Виробник: IXYS
Description: IGBT MODULE 1200V 125A 640W E3
Packaging: Box
Package / Case: E3
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: E3
IGBT Type: NPT
Part Status: Active
Current - Collector (Ic) (Max): 125 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 640 W
Current - Collector Cutoff (Max): 1.3 mA
Input Capacitance (Cies) @ Vce: 6.5 nF @ 25 V
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+10255.17 грн
MKI50-12F7 MKI50-12F7.pdf
Виробник: IXYS
Description: IGBT MODULE 1200V 65A 350W E2
Packaging: Box
Package / Case: E2
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.8V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: E2
IGBT Type: NPT
Part Status: Active
Current - Collector (Ic) (Max): 65 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 350 W
Current - Collector Cutoff (Max): 700 µA
Input Capacitance (Cies) @ Vce: 3.3 nF @ 25 V
на замовлення 6 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+7228.46 грн
MKI80-06T6K MKI80-06T6K.pdf
Виробник: IXYS
Description: IGBT MODULE 600V 89A 210W E1
Packaging: Box
Package / Case: E1
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: E1
IGBT Type: Trench
Current - Collector (Ic) (Max): 89 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 210 W
Current - Collector Cutoff (Max): 500 µA
Input Capacitance (Cies) @ Vce: 4.62 nF @ 25 V
товар відсутній
MUBW15-12T7 MUBW15-12T7.pdf
Виробник: IXYS
Description: IGBT MODULE 1200V 30A 140W E2
товар відсутній
MUBW25-12T7 MUBW25-12T7.pdf
Виробник: IXYS
Description: IGBT MODULE 1200V 45A 170W E2
товар відсутній
MUBW40-12T7 MUBW40-12T7.pdf
Виробник: IXYS
Description: IGBT MODULE 1200V 62A 220W E2
Packaging: Box
Package / Case: E2
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter with Brake
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 40A
NTC Thermistor: Yes
Supplier Device Package: E2
IGBT Type: Trench
Current - Collector (Ic) (Max): 62 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 220 W
Current - Collector Cutoff (Max): 1.75 mA
Input Capacitance (Cies) @ Vce: 2.5 nF @ 25 V
товар відсутній
MUBW45-12T6K MUBW45-12T6K.pdf
Виробник: IXYS
Description: IGBT MODULE 1200V 43A 160W E1
товар відсутній
MUBW50-12T8 MUBW50-12T8.pdf
Виробник: IXYS
Description: IGBT MODULE 1200V 80A 270W E3
Packaging: Box
Package / Case: E3
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter with Brake
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: E3
IGBT Type: Trench
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 270 W
Current - Collector Cutoff (Max): 2.7 mA
Input Capacitance (Cies) @ Vce: 3.5 nF @ 25 V
товар відсутній
MUBW50-17T8 MUBW50-17T8.pdf
Виробник: IXYS
Description: IGBT MODULE 1700V 74A 290W E3
Packaging: Box
Package / Case: E3
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter with Brake
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: E3
IGBT Type: Trench
Current - Collector (Ic) (Max): 74 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 290 W
Current - Collector Cutoff (Max): 400 µA
Input Capacitance (Cies) @ Vce: 4.4 nF @ 25 V
товар відсутній
MUBW75-12T8 MUBW75-12T8.pdf
Виробник: IXYS
Description: IGBT MODULE 1200V 110A 355W E3
Packaging: Box
Package / Case: E3
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter with Brake
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: E3
IGBT Type: Trench
Part Status: Active
Current - Collector (Ic) (Max): 110 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 355 W
Current - Collector Cutoff (Max): 4 mA
Input Capacitance (Cies) @ Vce: 5.35 nF @ 25 V
товар відсутній
MUBW75-17T8 MUBW75-17T8.pdf
Виробник: IXYS
Description: IGBT MODULE 1700V 113A 450W E3
Packaging: Box
Package / Case: E3
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter with Brake
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: E3
IGBT Type: Trench
Part Status: Active
Current - Collector (Ic) (Max): 113 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 450 W
Current - Collector Cutoff (Max): 800 µA
Input Capacitance (Cies) @ Vce: 6.6 nF @ 25 V
товар відсутній
MWI100-12T8T MWI100-12T8T.pdf
Виробник: IXYS
Description: MOD IGBT TRENCH SIXPACK E3
товар відсутній
MWI150-12T8T MWI150-12T8T.pdf
Виробник: IXYS
Description: MOD IGBT TRENCH SIXPACK E3
товар відсутній
MWI15-12A6K MWI15-12A6K.pdf
Виробник: IXYS
Description: MOD IGBT RBSOA SIXPACK E1
товар відсутній
MWI225-12E9 MWI225-12E9.pdf
Виробник: IXYS
Description: MOD IGBT SIXPACK E+
товар відсутній
MWI225-17E9 MWI225-17E9.pdf
Виробник: IXYS
Description: IGBT MODULE 1700V 335A 1400W E+
Packaging: Box
Package / Case: E+
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 225A
NTC Thermistor: Yes
Supplier Device Package: E+
IGBT Type: NPT
Part Status: Active
Current - Collector (Ic) (Max): 335 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 1400 W
Current - Collector Cutoff (Max): 600 µA
Input Capacitance (Cies) @ Vce: 22 nF @ 25 V
товар відсутній
MWI300-12E9 MWI300-12E9.pdf
Виробник: IXYS
Description: IGBT MODULE 1200V 530A 2100W E+
Packaging: Box
Package / Case: E+
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 300A
NTC Thermistor: Yes
Supplier Device Package: E+
IGBT Type: NPT
Part Status: Obsolete
Current - Collector (Ic) (Max): 530 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 2100 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 22 nF @ 25 V
товар відсутній
MWI300-17E9 MWI300-17E9.pdf
Виробник: IXYS
Description: IGBT MODULE 1700V 500A 2200W E+
Packaging: Box
Package / Case: E+
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 300A
NTC Thermistor: Yes
Supplier Device Package: E+
IGBT Type: NPT
Part Status: Active
Current - Collector (Ic) (Max): 500 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 2200 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 33 nF @ 25 V
товар відсутній
MWI450-12E9 MWI450-12E9.pdf
Виробник: IXYS
Description: IGBT MODULE 1200V 640A 2200W E+
Packaging: Box
Package / Case: E+
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 450A
NTC Thermistor: Yes
Supplier Device Package: E+
IGBT Type: NPT
Part Status: Obsolete
Current - Collector (Ic) (Max): 640 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 2200 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 33 nF @ 25 V
товар відсутній
MWI50-12T7T MWI50-12T7T.pdf
Виробник: IXYS
Description: IGBT MODULE 1200V 80A 270W E2
Packaging: Box
Package / Case: E2
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: E2
IGBT Type: Trench
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 270 W
Current - Collector Cutoff (Max): 4 mA
Input Capacitance (Cies) @ Vce: 3.5 nF @ 25 V
товар відсутній
MWI60-06G6K MWI60-06G6K.pdf
Виробник: IXYS
Description: IGBT MODULE 600V 60A 180W E1
Packaging: Box
Package / Case: E1
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 30A
NTC Thermistor: Yes
Supplier Device Package: E1
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 180 W
Current - Collector Cutoff (Max): 200 µA
Input Capacitance (Cies) @ Vce: 2.5 nF @ 25 V
товар відсутній
MWI75-12T7T MWI75-12T7T.pdf
Виробник: IXYS
Description: IGBT MOD TRENCH SIX-PACK E3
товар відсутній
MWI75-12T8T MWI75-12T8T.pdf
Виробник: IXYS
Description: IGBT MOD TRENCH SIX-PACK E3
товар відсутній
VUB135-22NO1 VUB135-22NO1.pdf
Виробник: IXYS
Description: BRIDGE RECT 3P 2.2KV 150A E2
товар відсутній
IXFH160N15T littelfuse_discrete_mosfets_n-channel_trench_gate_ixfh160n15t_datasheet.pdf.pdf
IXFH160N15T
Виробник: IXYS
Description: MOSFET N-CH 150V 160A TO247AD
товар відсутній
IXTA100N04T2 DS99972A(IXTA-TP100N04T2).pdf
IXTA100N04T2
Виробник: IXYS
Description: MOSFET N-CH 40V 100A TO263
товар відсутній
IXTA102N15T DS99661B(IXTA-TH-TP-TQ102N15T).pdf
IXTA102N15T
Виробник: IXYS
Description: MOSFET N-CH 150V 102A TO263
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 102A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 500mA, 10V
Power Dissipation (Max): 455W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5220 pF @ 25 V
на замовлення 570 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+313.06 грн
10+ 270.78 грн
100+ 221.84 грн
500+ 177.23 грн
IXTA10P50P littelfuse_discrete_mosfets_p-channel_ixt_10p50p_datasheet.pdf.pdf
IXTA10P50P
Виробник: IXYS
Description: MOSFET P-CH 500V 10A TO263
Packaging: Tube
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 5A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 25 V
товар відсутній
IXTA110N055T2 littelfuse_discrete_mosfets_n-channel_trench_gate_ixt_110n055t2_datasheet.pdf.pdf
IXTA110N055T2
Виробник: IXYS
Description: MOSFET N-CH 55V 110A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 6.6mOhm @ 25A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3060 pF @ 25 V
на замовлення 400 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+186.01 грн
50+ 141.92 грн
100+ 121.64 грн
Мінімальне замовлення: 2
IXTA120N04T2 littelfuse_discrete_mosfets_n-channel_trench_gate_ixt_120n04t2_datasheet.pdf.pdf
IXTA120N04T2
Виробник: IXYS
Description: MOSFET N-CH 40V 120A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 25A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 25 V
на замовлення 1950 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
300+118.09 грн
Мінімальне замовлення: 300
IXTA170N075T2 99970A.pdf
IXTA170N075T2
Виробник: IXYS
Description: MOSFET N-CH 75V 170A TO263
на замовлення 2050 шт:
термін постачання 21-31 дні (днів)
IXTA18P10T DS99966D(IXTY-TA-TP18P10T).pdf
IXTA18P10T
Виробник: IXYS
Description: MOSFET P-CH 100V 18A TO-263
товар відсутній
IXTA200N055T2 DS99919B(IXTA-TP200N055T2).pdf
IXTA200N055T2
Виробник: IXYS
Description: MOSFET N-CH 55V 200A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 50A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 25 V
на замовлення 1050 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+263.22 грн
50+ 201.05 грн
100+ 172.33 грн
500+ 143.75 грн
1000+ 123.09 грн
Мінімальне замовлення: 2
IXTA220N04T2 99918B.pdf
IXTA220N04T2
Виробник: IXYS
Description: MOSFET N-CH 40V 220A TO-263
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 220A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 50A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6820 pF @ 25 V
товар відсутній
IXTA220N04T2-7 littelfuse_discrete_mosfets_n-channel_trench_gate_ixta220n04t2-7_datasheet.pdf.pdf
IXTA220N04T2-7
Виробник: IXYS
Description: MOSFET N-CH 40V 220A TO263-7
Packaging: Tube
Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 220A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 50A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7 (IXTA)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6820 pF @ 25 V
товар відсутній
IXTA24P085T littelfuse_discrete_mosfets_p-channel_ixt_24p085t_datasheet.pdf.pdf
IXTA24P085T
Виробник: IXYS
Description: MOSFET P-CH 85V 24A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 12A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 85 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2090 pF @ 25 V
на замовлення 3324 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+175.48 грн
50+ 134.04 грн
100+ 114.87 грн
500+ 95.83 грн
1000+ 82.05 грн
2000+ 77.26 грн
Мінімальне замовлення: 2
IXTA26P20P IX%28T%2CH%2CP%2CQ%29A26P20P.pdf
IXTA26P20P
Виробник: IXYS
Description: MOSFET P-CH 200V 26A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 13A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2740 pF @ 25 V
товар відсутній
IXTA28P065T DS99968B(IXTA-TP28P065T).pdf
IXTA28P065T
Виробник: IXYS
Description: MOSFET P-CH 65V 28A TO-263
на замовлення 9 шт:
термін постачання 21-31 дні (днів)
IXTA32N20T littelfuse_discrete_mosfets_n-channel_trench_gate_ixt_32n20t_datasheet.pdf.pdf
IXTA32N20T
Виробник: IXYS
Description: MOSFET N-CH 200V 32A TO263
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 72mOhm @ 16A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1760 pF @ 25 V
товар відсутній
IXTA32P05T littelfuse_discrete_mosfets_p-channel_ixt_32p05t_datasheet.pdf.pdf
IXTA32P05T
Виробник: IXYS
Description: MOSFET P-CH 50V 32A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 500mA, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1975 pF @ 25 V
на замовлення 128 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+175.48 грн
50+ 134.04 грн
100+ 114.87 грн
Мінімальне замовлення: 2
IXTA44P15T littelfuse_discrete_mosfets_p-channel_ixt_44p15t_datasheet.pdf.pdf
IXTA44P15T
Виробник: IXYS
Description: MOSFET P-CH 150V 44A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 22A, 10V
Power Dissipation (Max): 298W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 175 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13400 pF @ 25 V
на замовлення 2769 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+405.71 грн
50+ 312.1 грн
100+ 279.25 грн
500+ 231.23 грн
1000+ 208.11 грн
2000+ 195 грн
IXTA48N20T littelfuse_discrete_mosfets_n-channel_trench_gate_ixt_48n20t_datasheet.pdf.pdf
IXTA48N20T
Виробник: IXYS
Description: MOSFET N-CH 200V 48A TO263
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 24A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3090 pF @ 25 V
на замовлення 1050 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+277.96 грн
10+ 225.22 грн
100+ 182.22 грн
Мінімальне замовлення: 2
IXTA52P10P DS99912A(IXTA-H-P-Q52P10P).pdf
IXTA52P10P
Виробник: IXYS
Description: MOSFET P-CH 100V 52A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 52A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2845 pF @ 25 V
на замовлення 1821 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+428.88 грн
50+ 329.92 грн
100+ 295.19 грн
500+ 244.43 грн
1000+ 219.99 грн
IXTA70N075T2 littelfuse_discrete_mosfets_n-channel_trench_gate_ixt_70n075t2_datasheet.pdf.pdf
IXTA70N075T2
Виробник: IXYS
Description: MOSFET N-CH 75V 70A TO263
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 25A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2725 pF @ 25 V
товар відсутній
IXTA76P10T littelfuse_discrete_mosfets_p-channel_ixt_76p10t_datasheet.pdf.pdf
IXTA76P10T
Виробник: IXYS
Description: MOSFET P-CH 100V 76A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 38A, 10V
Power Dissipation (Max): 298W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 197 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13700 pF @ 25 V
на замовлення 3480 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+405.71 грн
50+ 312.1 грн
100+ 279.25 грн
500+ 231.23 грн
1000+ 208.11 грн
2000+ 195 грн
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