| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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CPC3708CTR | IXYS |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 350V; 0.13A; 1.8W; SOT89 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 350V Drain current: 0.13A Power dissipation: 1.8W Case: SOT89 On-state resistance: 8Ω Mounting: SMD Kind of package: reel; tape Kind of channel: depletion Gate-source voltage: ±20V |
на замовлення 2575 шт: термін постачання 21-30 дні (днів) |
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CPC5603CTR | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 415V; 0.13A; 2.5W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 415V Drain current: 0.13A Power dissipation: 2.5W Case: SOT223 On-state resistance: 14Ω Mounting: SMD Kind of package: reel; tape Kind of channel: depletion Gate-source voltage: ±20V |
на замовлення 198 шт: термін постачання 21-30 дні (днів) |
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CPC3703CTR | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 0.36A; 1.1W; SOT89 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 0.36A Power dissipation: 1.1W Case: SOT89 On-state resistance: 4Ω Mounting: SMD Kind of package: reel; tape Kind of channel: depletion Gate-source voltage: ±15V |
на замовлення 1980 шт: термін постачання 21-30 дні (днів) |
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CPC3701CTR | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 0.6A; 1.1W; SOT89 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.6A Power dissipation: 1.1W Case: SOT89 On-state resistance: 1Ω Mounting: SMD Kind of package: reel; tape Kind of channel: depletion Gate-source voltage: ±15V |
на замовлення 310 шт: термін постачання 21-30 дні (днів) |
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CPC5602CTR | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 350V; 0.13A; 2.5W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 350V Drain current: 0.13A Power dissipation: 2.5W Case: SOT223 On-state resistance: 14Ω Mounting: SMD Kind of package: reel; tape Kind of channel: depletion Gate-source voltage: ±20V |
на замовлення 577 шт: термін постачання 21-30 дні (днів) |
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CPC3902ZTR | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 0.4A; 1.8W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 0.4A Power dissipation: 1.8W Case: SOT223 On-state resistance: 2.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: depletion Gate-source voltage: ±15V |
на замовлення 88 шт: термін постачання 21-30 дні (днів) |
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CPC3708ZTR | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 350V; 0.13A; 2.5W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 350V Drain current: 0.13A Power dissipation: 2.5W Case: SOT223 On-state resistance: 8Ω Mounting: SMD Kind of package: reel; tape Kind of channel: depletion Gate-source voltage: ±20V |
на замовлення 885 шт: термін постачання 21-30 дні (днів) |
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CPC3720CTR | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 350V; 0.13A; 1.4W; SOT89 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 350V Drain current: 0.13A Power dissipation: 1.4W Case: SOT89 On-state resistance: 22Ω Mounting: SMD Kind of package: reel; tape Kind of channel: depletion Gate-source voltage: ±15V |
на замовлення 376 шт: термін постачання 21-30 дні (днів) |
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CPC3730CTR | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 350V; 0.14A; 1.4W; SOT89 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 350V Drain current: 0.14A Power dissipation: 1.4W Case: SOT89 On-state resistance: 35Ω Mounting: SMD Kind of package: reel; tape Kind of channel: depletion Gate-source voltage: ±15V |
на замовлення 23 шт: термін постачання 21-30 дні (днів) |
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IXTP3N50D2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 3A; 125W; TO220AB; 24ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 3A Power dissipation: 125W Case: TO220AB On-state resistance: 1.5Ω Mounting: THT Gate charge: 1.07µC Kind of package: tube Kind of channel: depletion Reverse recovery time: 24ns |
на замовлення 275 шт: термін постачання 21-30 дні (днів) |
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IXTH50P10 | IXYS |
Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -50A; 300W; TO247-3; 180ns Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -50A Power dissipation: 300W Case: TO247-3 Gate-source voltage: ±20V On-state resistance: 55mΩ Mounting: THT Gate charge: 0.14µC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 180ns |
на замовлення 306 шт: термін постачання 21-30 дні (днів) |
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IXTT50P10 | IXYS |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -50A; 300W; TO268; 180ns Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -50A Power dissipation: 300W Case: TO268 Gate-source voltage: ±20V On-state resistance: 55mΩ Mounting: SMD Gate charge: 0.14µC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 180ns |
на замовлення 17 шт: термін постачання 21-30 дні (днів) |
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IXTQ470P2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 42A; 830W; TO3P; 400ns Case: TO3P Mounting: THT On-state resistance: 0.145Ω Kind of package: tube Features of semiconductor devices: standard power mosfet Polarisation: unipolar Gate charge: 88nC Reverse recovery time: 400ns Drain current: 42A Drain-source voltage: 500V Power dissipation: 830W Kind of channel: enhancement Type of transistor: N-MOSFET |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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IXTA90N055T2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 90A; 150W; TO263; 37ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 55V Case: TO263 On-state resistance: 8.4mΩ Mounting: SMD Kind of package: tube Kind of channel: enhancement Reverse recovery time: 37ns Power dissipation: 150W Drain current: 90A Features of semiconductor devices: thrench gate power mosfet Gate charge: 42nC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| IXFH90N65X3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 90A; Idm: 150A; 960W Type of transistor: N-MOSFET Technology: HiPerFET™; X3-Class Polarisation: unipolar Drain-source voltage: 650V Drain current: 90A Pulsed drain current: 150A Power dissipation: 960W Case: TO247-3 Gate-source voltage: ±20V On-state resistance: 33mΩ Mounting: THT Gate charge: 95nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 175ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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IXTH80N075L2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 357W; TO247-3; 160ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 75V Drain current: 80A Power dissipation: 357W Case: TO247-3 On-state resistance: 24mΩ Mounting: THT Gate charge: 103nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: linear power mosfet Reverse recovery time: 160ns |
на замовлення 257 шт: термін постачання 21-30 дні (днів) |
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IXTP80N075L2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 357W; TO220AB; 160ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 75V Drain current: 80A Power dissipation: 357W Case: TO220AB On-state resistance: 24mΩ Mounting: THT Gate charge: 103nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: linear power mosfet Reverse recovery time: 160ns |
на замовлення 172 шт: термін постачання 21-30 дні (днів) |
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IXTA80N075L2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 357W; TO263; 160ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 75V Drain current: 80A Power dissipation: 357W Case: TO263 On-state resistance: 24mΩ Mounting: SMD Gate charge: 103nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: linear power mosfet Reverse recovery time: 160ns |
на замовлення 300 шт: термін постачання 21-30 дні (днів) |
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| VUO160-12NO7 | IXYS |
Category: Three phase diode bridge rectifiers Description: Bridge rectifier: three-phase; Urmax: 1.2kV; If: 175A; Ifsm: 1.8kA Type of bridge rectifier: three-phase Max. off-state voltage: 1.2kV Load current: 175A Max. forward impulse current: 1.8kA Electrical mounting: screw Version: module Max. forward voltage: 1.39V Leads: M6 screws Case: PWS-E Mechanical mounting: screw |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| VBO160-12NO7 | IXYS |
Category: Sing. ph. diode bridge rectif. - others Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 160A; Ifsm: 2.8kA Type of bridge rectifier: single-phase Max. off-state voltage: 1.2kV Load current: 160A Max. forward impulse current: 2.8kA Electrical mounting: screw Version: module Leads: M6 screws Case: PWS-E Mechanical mounting: screw |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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IXFH20N100P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 20A; 660W; TO247-3 Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 1kV Drain current: 20A Power dissipation: 660W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 570mΩ Mounting: THT Gate charge: 126nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 300ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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IXFT20N100P | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 20A; 660W; TO268; 300ns Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 1kV Drain current: 20A Power dissipation: 660W Case: TO268 Gate-source voltage: ±30V On-state resistance: 570mΩ Mounting: SMD Gate charge: 126nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 300ns |
товару немає в наявності |
В кошику од. на суму грн. |
| CPC3708CTR |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 350V; 0.13A; 1.8W; SOT89
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 350V
Drain current: 0.13A
Power dissipation: 1.8W
Case: SOT89
On-state resistance: 8Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 350V; 0.13A; 1.8W; SOT89
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 350V
Drain current: 0.13A
Power dissipation: 1.8W
Case: SOT89
On-state resistance: 8Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
Gate-source voltage: ±20V
на замовлення 2575 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 42.39 грн |
| 13+ | 33.62 грн |
| 100+ | 28.70 грн |
| 500+ | 26.90 грн |
| CPC5603CTR |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 415V; 0.13A; 2.5W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 415V
Drain current: 0.13A
Power dissipation: 2.5W
Case: SOT223
On-state resistance: 14Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 415V; 0.13A; 2.5W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 415V
Drain current: 0.13A
Power dissipation: 2.5W
Case: SOT223
On-state resistance: 14Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
Gate-source voltage: ±20V
на замовлення 198 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 54.75 грн |
| 11+ | 39.69 грн |
| 100+ | 33.38 грн |
| CPC3703CTR |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 0.36A; 1.1W; SOT89
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 0.36A
Power dissipation: 1.1W
Case: SOT89
On-state resistance: 4Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
Gate-source voltage: ±15V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 0.36A; 1.1W; SOT89
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 0.36A
Power dissipation: 1.1W
Case: SOT89
On-state resistance: 4Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
Gate-source voltage: ±15V
на замовлення 1980 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 74.18 грн |
| 10+ | 50.60 грн |
| 50+ | 38.38 грн |
| 100+ | 34.20 грн |
| 250+ | 29.44 грн |
| 500+ | 27.96 грн |
| CPC3701CTR |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.6A; 1.1W; SOT89
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.6A
Power dissipation: 1.1W
Case: SOT89
On-state resistance: 1Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
Gate-source voltage: ±15V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.6A; 1.1W; SOT89
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.6A
Power dissipation: 1.1W
Case: SOT89
On-state resistance: 1Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
Gate-source voltage: ±15V
на замовлення 310 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 68.00 грн |
| 10+ | 42.73 грн |
| 100+ | 30.92 грн |
| CPC5602CTR |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 350V; 0.13A; 2.5W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 350V
Drain current: 0.13A
Power dissipation: 2.5W
Case: SOT223
On-state resistance: 14Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 350V; 0.13A; 2.5W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 350V
Drain current: 0.13A
Power dissipation: 2.5W
Case: SOT223
On-state resistance: 14Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
Gate-source voltage: ±20V
на замовлення 577 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 68.00 грн |
| 10+ | 45.68 грн |
| 50+ | 35.92 грн |
| 100+ | 32.56 грн |
| 250+ | 28.54 грн |
| 500+ | 26.98 грн |
| CPC3902ZTR |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 0.4A; 1.8W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 0.4A
Power dissipation: 1.8W
Case: SOT223
On-state resistance: 2.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
Gate-source voltage: ±15V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 0.4A; 1.8W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 0.4A
Power dissipation: 1.8W
Case: SOT223
On-state resistance: 2.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
Gate-source voltage: ±15V
на замовлення 88 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 75.95 грн |
| 10+ | 47.07 грн |
| CPC3708ZTR |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 350V; 0.13A; 2.5W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 350V
Drain current: 0.13A
Power dissipation: 2.5W
Case: SOT223
On-state resistance: 8Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 350V; 0.13A; 2.5W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 350V
Drain current: 0.13A
Power dissipation: 2.5W
Case: SOT223
On-state resistance: 8Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
Gate-source voltage: ±20V
на замовлення 885 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 79.48 грн |
| 10+ | 49.53 грн |
| 100+ | 38.38 грн |
| 500+ | 31.33 грн |
| CPC3720CTR |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 350V; 0.13A; 1.4W; SOT89
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 350V
Drain current: 0.13A
Power dissipation: 1.4W
Case: SOT89
On-state resistance: 22Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
Gate-source voltage: ±15V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 350V; 0.13A; 1.4W; SOT89
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 350V
Drain current: 0.13A
Power dissipation: 1.4W
Case: SOT89
On-state resistance: 22Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
Gate-source voltage: ±15V
на замовлення 376 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 62.70 грн |
| 13+ | 33.13 грн |
| 25+ | 30.34 грн |
| 100+ | 26.73 грн |
| 250+ | 24.52 грн |
| CPC3730CTR |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 350V; 0.14A; 1.4W; SOT89
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 350V
Drain current: 0.14A
Power dissipation: 1.4W
Case: SOT89
On-state resistance: 35Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
Gate-source voltage: ±15V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 350V; 0.14A; 1.4W; SOT89
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 350V
Drain current: 0.14A
Power dissipation: 1.4W
Case: SOT89
On-state resistance: 35Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
Gate-source voltage: ±15V
на замовлення 23 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 64.47 грн |
| 11+ | 38.21 грн |
| IXTP3N50D2 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3A; 125W; TO220AB; 24ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3A
Power dissipation: 125W
Case: TO220AB
On-state resistance: 1.5Ω
Mounting: THT
Gate charge: 1.07µC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 24ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3A; 125W; TO220AB; 24ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3A
Power dissipation: 125W
Case: TO220AB
On-state resistance: 1.5Ω
Mounting: THT
Gate charge: 1.07µC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 24ns
на замовлення 275 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 275.54 грн |
| 10+ | 189.43 грн |
| IXTH50P10 |
|
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -50A; 300W; TO247-3; 180ns
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -50A
Power dissipation: 300W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 55mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 180ns
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -50A; 300W; TO247-3; 180ns
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -50A
Power dissipation: 300W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 55mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 180ns
на замовлення 306 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 816.02 грн |
| 10+ | 646.21 грн |
| 30+ | 606.02 грн |
| 120+ | 556.00 грн |
| 270+ | 529.76 грн |
| IXTT50P10 |
|
Виробник: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -50A; 300W; TO268; 180ns
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -50A
Power dissipation: 300W
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 55mΩ
Mounting: SMD
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 180ns
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -50A; 300W; TO268; 180ns
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -50A
Power dissipation: 300W
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 55mΩ
Mounting: SMD
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 180ns
на замовлення 17 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 731.24 грн |
| 3+ | 600.28 грн |
| 10+ | 538.78 грн |
| IXTQ470P2 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 42A; 830W; TO3P; 400ns
Case: TO3P
Mounting: THT
On-state resistance: 0.145Ω
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Polarisation: unipolar
Gate charge: 88nC
Reverse recovery time: 400ns
Drain current: 42A
Drain-source voltage: 500V
Power dissipation: 830W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 42A; 830W; TO3P; 400ns
Case: TO3P
Mounting: THT
On-state resistance: 0.145Ω
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Polarisation: unipolar
Gate charge: 88nC
Reverse recovery time: 400ns
Drain current: 42A
Drain-source voltage: 500V
Power dissipation: 830W
Kind of channel: enhancement
Type of transistor: N-MOSFET
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| IXTA90N055T2 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 90A; 150W; TO263; 37ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Case: TO263
On-state resistance: 8.4mΩ
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 37ns
Power dissipation: 150W
Drain current: 90A
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 42nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 90A; 150W; TO263; 37ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Case: TO263
On-state resistance: 8.4mΩ
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 37ns
Power dissipation: 150W
Drain current: 90A
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 42nC
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| IXFH90N65X3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 90A; Idm: 150A; 960W
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 90A
Pulsed drain current: 150A
Power dissipation: 960W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 33mΩ
Mounting: THT
Gate charge: 95nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 175ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 90A; Idm: 150A; 960W
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 90A
Pulsed drain current: 150A
Power dissipation: 960W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 33mΩ
Mounting: THT
Gate charge: 95nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 175ns
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| IXTH80N075L2 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 357W; TO247-3; 160ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 357W
Case: TO247-3
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 103nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 160ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 357W; TO247-3; 160ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 357W
Case: TO247-3
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 103nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 160ns
на замовлення 257 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 611.13 грн |
| 5+ | 476.45 грн |
| 10+ | 432.17 грн |
| 30+ | 416.59 грн |
| IXTP80N075L2 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 357W; TO220AB; 160ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 357W
Case: TO220AB
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 103nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 160ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 357W; TO220AB; 160ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 357W
Case: TO220AB
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 103nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 160ns
на замовлення 172 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 496.32 грн |
| 5+ | 400.19 грн |
| 10+ | 360.83 грн |
| 50+ | 349.34 грн |
| IXTA80N075L2 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 357W; TO263; 160ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 357W
Case: TO263
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 103nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 160ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 357W; TO263; 160ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 357W
Case: TO263
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 103nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 160ns
на замовлення 300 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1057.12 грн |
| 5+ | 851.22 грн |
| 10+ | 750.35 грн |
| 25+ | 657.69 грн |
| VUO160-12NO7 |
|
Виробник: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.2kV; If: 175A; Ifsm: 1.8kA
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.2kV
Load current: 175A
Max. forward impulse current: 1.8kA
Electrical mounting: screw
Version: module
Max. forward voltage: 1.39V
Leads: M6 screws
Case: PWS-E
Mechanical mounting: screw
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.2kV; If: 175A; Ifsm: 1.8kA
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.2kV
Load current: 175A
Max. forward impulse current: 1.8kA
Electrical mounting: screw
Version: module
Max. forward voltage: 1.39V
Leads: M6 screws
Case: PWS-E
Mechanical mounting: screw
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| VBO160-12NO7 |
|
Виробник: IXYS
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 160A; Ifsm: 2.8kA
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.2kV
Load current: 160A
Max. forward impulse current: 2.8kA
Electrical mounting: screw
Version: module
Leads: M6 screws
Case: PWS-E
Mechanical mounting: screw
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 160A; Ifsm: 2.8kA
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.2kV
Load current: 160A
Max. forward impulse current: 2.8kA
Electrical mounting: screw
Version: module
Leads: M6 screws
Case: PWS-E
Mechanical mounting: screw
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| IXFH20N100P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 20A; 660W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 20A
Power dissipation: 660W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 570mΩ
Mounting: THT
Gate charge: 126nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 300ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 20A; 660W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 20A
Power dissipation: 660W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 570mΩ
Mounting: THT
Gate charge: 126nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 300ns
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| IXFT20N100P |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 20A; 660W; TO268; 300ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 20A
Power dissipation: 660W
Case: TO268
Gate-source voltage: ±30V
On-state resistance: 570mΩ
Mounting: SMD
Gate charge: 126nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 300ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 20A; 660W; TO268; 300ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 20A
Power dissipation: 660W
Case: TO268
Gate-source voltage: ±30V
On-state resistance: 570mΩ
Mounting: SMD
Gate charge: 126nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 300ns
товару немає в наявності
В кошику
од. на суму грн.