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DSEP2X61-03A DSEP2X61-03A IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98C889CC97A9AD8BF&compId=DSEP2x61-03A.pdf?ci_sign=fefb71e7c146efb6bbde3c29fbc2ca054f68b484 description Category: Diode modules
Description: Module: diode; double independent; 300V; If: 60Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 300V
Load current: 60A x2
Case: SOT227B
Max. forward voltage: 1.11V
Max. forward impulse current: 0.6kA
Electrical mounting: screw
Max. load current: 60A
Mechanical mounting: screw
Technology: HiPerFRED™
на замовлення 69 шт:
термін постачання 21-30 дні (днів)
1+2055.10 грн
3+1901.87 грн
В кошику  од. на суму  грн.
DPF240X200NA DPF240X200NA IXYS DPF240X200NA.pdf Category: Diode modules
Description: Module: diode; double independent; 200V; If: 120Ax2; SOT227B; screw
Max. forward voltage: 1.06V
Max. load current: 120A
Load current: 120A x2
Max. off-state voltage: 200V
Max. forward impulse current: 1.2kA
Electrical mounting: screw
Mechanical mounting: screw
Case: SOT227B
Semiconductor structure: double independent
Type of semiconductor module: diode
на замовлення 56 шт:
термін постачання 21-30 дні (днів)
1+3081.35 грн
3+2549.77 грн
9+2513.56 грн
В кошику  од. на суму  грн.
DSS2X121-0045B DSS2X121-0045B IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE991AF3EBF7307B8BF&compId=DSS2x121-0045B.pdf?ci_sign=ac4f5fa5561f8409b6a19db0a7e44ae5c19d1449 description Category: Diode modules
Description: Module: diode; double independent; 45V; If: 120Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 45V
Load current: 120A x2
Case: SOT227B
Max. forward voltage: 0.59V
Max. forward impulse current: 1.6kA
Electrical mounting: screw
Max. load current: 120A
Mechanical mounting: screw
Features of semiconductor devices: Schottky
на замовлення 17 шт:
термін постачання 21-30 дні (днів)
1+2570.82 грн
3+2110.32 грн
10+1897.84 грн
В кошику  од. на суму  грн.
MCO150-16IO1 MCO150-16IO1 IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FF25B90517B35EA&compId=MCO150-16IO1.pdf?ci_sign=46874172e95e49a2ec6ad9fcf27e90ddeba41775 Category: Thyristor modules
Description: Module: thyristor; single thyristor; 1.6kV; 158A; SOT227B; screw
Type of semiconductor module: thyristor
Semiconductor structure: single thyristor
Max. off-state voltage: 1.6kV
Load current: 158A
Case: SOT227B
Max. forward voltage: 1.78V
Max. forward impulse current: 2.16kA
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
Gate current: 150/200mA
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
1+2829.99 грн
В кошику  од. на суму  грн.
IXDD630MYI IXDD630MYI IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98D875D8EAC1A78BF&compId=IXD_630.pdf?ci_sign=6691b6fa21018ff2c79d3fb6449ba0909ac8793c Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -30÷30A; Ch: 1; 9÷35V
Kind of package: tube
Operating temperature: -40...125°C
Output current: -30...30A
Turn-off time: 135ns
Turn-on time: 135ns
Number of channels: 1
Supply voltage: 9...35V
Case: TO263-5
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Mounting: SMD
Kind of output: non-inverting
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IXDD630MCI IXDD630MCI IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98D875D8EAC1A78BF&compId=IXD_630.pdf?ci_sign=6691b6fa21018ff2c79d3fb6449ba0909ac8793c Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -30÷30A; Ch: 1; 9÷35V
Kind of package: tube
Operating temperature: -40...125°C
Output current: -30...30A
Turn-off time: 135ns
Turn-on time: 135ns
Number of channels: 1
Supply voltage: 9...35V
Case: TO220-5
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Mounting: THT
Kind of output: non-inverting
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IXTQ470P2 IXTQ470P2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9752F13FF820&compId=IXTQ470P2.pdf?ci_sign=76af40f262edd6db225179a4687589ac6121f39b Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 42A; 830W; TO3P; 400ns
Case: TO3P
Mounting: THT
On-state resistance: 0.145Ω
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Polarisation: unipolar
Gate charge: 88nC
Reverse recovery time: 400ns
Drain current: 42A
Drain-source voltage: 500V
Power dissipation: 830W
Kind of channel: enhancement
Type of transistor: N-MOSFET
товару немає в наявності
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CS45-12IO1 CS45-12IO1 IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A7A1C90DA181DE27&compId=CS45-08IO1-DTE.pdf?ci_sign=370091429d5995645cf0ec659bab53cef7de1ae0 Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 71A; 45A; Igt: 80mA; TO247AD; THT; tube
Max. off-state voltage: 1.2kV
Load current: 45A
Case: TO247AD
Mounting: THT
Max. load current: 71A
Max. forward impulse current: 520A
Kind of package: tube
Type of thyristor: thyristor
Gate current: 80mA
на замовлення 297 шт:
термін постачання 21-30 дні (днів)
1+451.58 грн
5+329.18 грн
10+290.55 грн
30+267.21 грн
В кошику  од. на суму  грн.
IXTX102N65X2 IXTX102N65X2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3A30509622B9820&compId=IXTK(X)102N65X2.pdf?ci_sign=179728ba4b6154ce0a3f464c48ebd958f7ec0bd6 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 102A; 1040W; PLUS247™; 450ns
Case: PLUS247™
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Type of transistor: N-MOSFET
Features of semiconductor devices: ultra junction x-class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 102A
Reverse recovery time: 450ns
Gate charge: 152nC
On-state resistance: 30mΩ
Power dissipation: 1.04kW
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IXTP48P05T IXTP48P05T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA0C43F950B18BF&compId=IXT_48P05T.pdf?ci_sign=f2ae0764a4420e9e69779cd81a0b142c17b0cc14 Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -48A; 150W; TO220AB
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -48A
Reverse recovery time: 30ns
Gate charge: 53nC
On-state resistance: 30mΩ
Gate-source voltage: ±15V
Power dissipation: 150W
на замовлення 295 шт:
термін постачання 21-30 дні (днів)
2+289.50 грн
10+206.85 грн
50+175.46 грн
100+169.82 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXTP44N10T IXTP44N10T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D51AD1A84D5820&compId=IXTP(Y)44N10T.pdf?ci_sign=241a5f60ac60b85bce90b3648c8e3960e337142a Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 44A; 130W; TO220AB; 60ns
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Type of transistor: N-MOSFET
Features of semiconductor devices: thrench gate power mosfet
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 44A
Reverse recovery time: 60ns
On-state resistance: 30mΩ
Power dissipation: 130W
на замовлення 158 шт:
термін постачання 21-30 дні (днів)
4+143.88 грн
10+103.83 грн
50+78.88 грн
100+70.83 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IXTY44N10T IXTY44N10T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D51AD1A84D5820&compId=IXTP(Y)44N10T.pdf?ci_sign=241a5f60ac60b85bce90b3648c8e3960e337142a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 44A; 130W; TO252; 60ns
Case: TO252
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Type of transistor: N-MOSFET
Features of semiconductor devices: thrench gate power mosfet
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 44A
Reverse recovery time: 60ns
On-state resistance: 30mΩ
Power dissipation: 130W
на замовлення 288 шт:
термін постачання 21-30 дні (днів)
3+172.49 грн
10+139.24 грн
25+112.68 грн
70+97.39 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IXTY48P05T IXTY48P05T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA0C43F950B18BF&compId=IXT_48P05T.pdf?ci_sign=f2ae0764a4420e9e69779cd81a0b142c17b0cc14 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -48A; 150W; TO252
Case: TO252
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -48A
Reverse recovery time: 30ns
Gate charge: 53nC
On-state resistance: 30mΩ
Gate-source voltage: ±15V
Power dissipation: 150W
товару немає в наявності
В кошику  од. на суму  грн.
IXTA48P05T IXTA48P05T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA0C43F950B18BF&compId=IXT_48P05T.pdf?ci_sign=f2ae0764a4420e9e69779cd81a0b142c17b0cc14 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -48A; 150W; TO263
Case: TO263
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -48A
Reverse recovery time: 30ns
Gate charge: 53nC
On-state resistance: 30mΩ
Gate-source voltage: ±15V
Power dissipation: 150W
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В кошику  од. на суму  грн.
IXTK120P20T IXTK120P20T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98E9EA563468D18BF&compId=IXT_120P20T.pdf?ci_sign=b303308099e4550f537d8d87d7d46f104218dd25 Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -200V; -120A; 1040W
Case: PLUS264™
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -120A
Reverse recovery time: 300ns
Gate charge: 740nC
On-state resistance: 30mΩ
Gate-source voltage: ±15V
Power dissipation: 1.04kW
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IXTK102N65X2 IXTK102N65X2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3A30509622B9820&compId=IXTK(X)102N65X2.pdf?ci_sign=179728ba4b6154ce0a3f464c48ebd958f7ec0bd6 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 102A; 1040W; TO264; 450ns
Case: TO264
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Type of transistor: N-MOSFET
Features of semiconductor devices: ultra junction x-class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 102A
Reverse recovery time: 450ns
Gate charge: 152nC
On-state resistance: 30mΩ
Power dissipation: 1.04kW
товару немає в наявності
В кошику  од. на суму  грн.
IXTN120P20T IXTN120P20T IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1EE79794A7765FE1E748&compId=IXTN120P20T.pdf?ci_sign=424025f9bccd2160baf20cb9a4a14aba3d44a2f2 Category: Transistor modules MOSFET
Description: Module; single transistor; -200V; -106A; SOT227B; screw; Idm: -400A
Case: SOT227B
Semiconductor structure: single transistor
Kind of channel: enhancement
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Electrical mounting: screw
Technology: TrenchP™
Polarisation: unipolar
Pulsed drain current: -400A
Drain-source voltage: -200V
Drain current: -106A
Reverse recovery time: 300ns
Gate charge: 740nC
On-state resistance: 30mΩ
Gate-source voltage: ±15V
Power dissipation: 830W
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IXTN102N65X2 IXTN102N65X2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99EF9E6330B4C1820&compId=IXTN102N65X2.pdf?ci_sign=9e7b58dfb51537d8509f57c064d3549be58d17de Category: Transistor modules MOSFET
Description: Module; single transistor; 650V; 76A; SOT227B; screw; Idm: 204A
Case: SOT227B
Semiconductor structure: single transistor
Kind of channel: enhancement
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Electrical mounting: screw
Technology: X2-Class
Polarisation: unipolar
Pulsed drain current: 204A
Drain-source voltage: 650V
Drain current: 76A
Reverse recovery time: 450ns
Gate charge: 152nC
On-state resistance: 30mΩ
Gate-source voltage: ±40V
Power dissipation: 595W
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В кошику  од. на суму  грн.
DAA200X1800NA DAA200X1800NA IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA995824A0EA360C7&compId=DAA200X1800NA.pdf?ci_sign=db1937538aeee57eb4a8511896da8a8361264e03 Category: Diode modules
Description: Module: diode; double independent; 1.8kV; If: 100Ax2; SOT227B
Type of semiconductor module: diode
Semiconductor structure: double independent
Mechanical mounting: screw
Electrical mounting: screw
Case: SOT227B
Max. forward voltage: 1.21V
Load current: 100A x2
Max. forward impulse current: 1.5kA
Max. off-state voltage: 1.8kV
Features of semiconductor devices: avalanche breakdown effect
на замовлення 74 шт:
термін постачання 21-30 дні (днів)
1+2570.82 грн
3+2309.12 грн
10+2152.98 грн
30+2096.64 грн
В кошику  од. на суму  грн.
CLA15E1200NPZ-TUB CLA15E1200NPZ-TUB IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCB5B432A891E0C4&compId=CLA15E1200NPZ.pdf?ci_sign=2ea2a8fa3bab3e7257fd2545af159cb17839baac Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 33A; 15A; Igt: 20/40mA; TO263ABHV; SMD; tube
Mounting: SMD
Type of thyristor: thyristor
Case: TO263ABHV
Kind of package: tube
Features of semiconductor devices: two gate polarities
Gate current: 20/40mA
Load current: 15A
Max. load current: 33A
Max. forward impulse current: 0.145kA
Max. off-state voltage: 1.2kV
на замовлення 50 шт:
термін постачання 21-30 дні (днів)
3+153.42 грн
4+127.97 грн
10+113.48 грн
50+103.02 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
MCO150-12IO1 MCO150-12IO1 IXYS littelfuse-power-semiconductors-mco150-12io1-datasheet?assetguid=f9ee00e6-1e95-47df-b091-c9d6d91a784d Category: Thyristor modules
Description: Module: thyristor; single thyristor; 1.2kV; 158A; SOT227B; screw
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single thyristor
Case: SOT227B
Type of semiconductor module: thyristor
Gate current: 150/200mA
Max. forward voltage: 1.89V
Load current: 158A
Max. off-state voltage: 1.2kV
Kind of package: bulk
на замовлення 4 шт:
термін постачання 21-30 дні (днів)
1+2839.52 грн
В кошику  од. на суму  грн.
LAA110 LAA110 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A47459C0E698BF&compId=LAA110.pdf?ci_sign=ccd17f31175d39f76946339f4bf405c57c47714b Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Kind of output: MOSFET
Manufacturer series: OptoMOS
Mounting: THT
Operating temperature: -40...85°C
Turn-on time: 3ms
Turn-off time: 3ms
Body dimensions: 9.65x6.35x3.3mm
Max. operating current: 120mA
Control current max.: 50mA
On-state resistance: 35Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP8
Type of relay: solid state
Contacts configuration: SPST-NO x2
на замовлення 186 шт:
термін постачання 21-30 дні (днів)
2+308.57 грн
5+259.16 грн
10+239.85 грн
30+228.58 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
LAA110PL LAA110PL IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B493F923AEC0C7&compId=LAA110L.pdf?ci_sign=c5d9dc6bd2f731b493e5c3213f701f4abd8a57f7 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Kind of output: MOSFET
Manufacturer series: OptoMOS
Mounting: SMT
Operating temperature: -40...85°C
Turn-on time: 3ms
Turn-off time: 3ms
Body dimensions: 9.66x6.35x2.16mm
Max. operating current: 120mA
Control current max.: 50mA
On-state resistance: 35Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP8
Type of relay: solid state
Contacts configuration: SPST-NO x2
на замовлення 295 шт:
термін постачання 21-30 дні (днів)
2+306.83 грн
10+251.11 грн
100+230.99 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
LAA110S LAA110S IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A47459C0E698BF&compId=LAA110.pdf?ci_sign=ccd17f31175d39f76946339f4bf405c57c47714b Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Kind of output: MOSFET
Manufacturer series: OptoMOS
Mounting: SMT
Operating temperature: -40...85°C
Turn-on time: 3ms
Turn-off time: 3ms
Body dimensions: 9.65x6.35x3.3mm
Max. operating current: 120mA
Control current max.: 50mA
On-state resistance: 35Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP8
Type of relay: solid state
Contacts configuration: SPST-NO x2
на замовлення 218 шт:
термін постачання 21-30 дні (днів)
2+383.11 грн
50+300.21 грн
100+284.92 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
PAA110LS PAA110LS IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4949C269D20C7&compId=PAA110L.pdf?ci_sign=0eb0eb70862b50b325e34277b7cc4b8023f30085 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; OptoMOS
Contacts configuration: SPST-NO x2
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Turn-off time: 0.25ms
Turn-on time: 1ms
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 150mA
On-state resistance: 22Ω
Switched voltage: max. 400V AC; max. 400V DC
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Case: DIP8
на замовлення 171 шт:
термін постачання 21-30 дні (днів)
2+403.91 грн
50+351.72 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
PAA110PL PAA110PL IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4949C269D20C7&compId=PAA110L.pdf?ci_sign=0eb0eb70862b50b325e34277b7cc4b8023f30085 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; OptoMOS
Contacts configuration: SPST-NO x2
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Turn-off time: 0.25ms
Turn-on time: 1ms
Body dimensions: 9.65x6.35x2.16mm
Control current max.: 50mA
Max. operating current: 150mA
On-state resistance: 22Ω
Switched voltage: max. 400V AC; max. 400V DC
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Case: DIP8
на замовлення 98 шт:
термін постачання 21-30 дні (днів)
1+464.59 грн
10+351.72 грн
В кошику  од. на суму  грн.
PAA110S PAA110S IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4949C269B40C7&compId=PAA110.pdf?ci_sign=98ff0395432b6b3c34a6741a19df9265e735a6f5 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; OptoMOS
Contacts configuration: SPST-NO x2
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Turn-off time: 0.25ms
Turn-on time: 1ms
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 150mA
On-state resistance: 22Ω
Switched voltage: max. 400V AC; max. 400V DC
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Case: DIP8
на замовлення 90 шт:
термін постачання 21-30 дні (днів)
1+487.12 грн
10+382.31 грн
50+346.09 грн
В кошику  од. на суму  грн.
PAA110 PAA110 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4949C269B40C7&compId=PAA110.pdf?ci_sign=98ff0395432b6b3c34a6741a19df9265e735a6f5 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; OptoMOS
Contacts configuration: SPST-NO x2
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Kind of output: MOSFET
Mounting: THT
Type of relay: solid state
Turn-off time: 0.25ms
Turn-on time: 1ms
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 150mA
On-state resistance: 22Ω
Switched voltage: max. 400V AC; max. 400V DC
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Case: DIP8
на замовлення 43 шт:
термін постачання 21-30 дні (днів)
1+465.45 грн
В кошику  од. на суму  грн.
PAA110L PAA110L IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4949C269D20C7&compId=PAA110L.pdf?ci_sign=0eb0eb70862b50b325e34277b7cc4b8023f30085 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; OptoMOS
Contacts configuration: SPST-NO x2
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Kind of output: MOSFET
Mounting: THT
Type of relay: solid state
Turn-off time: 0.25ms
Turn-on time: 1ms
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 150mA
On-state resistance: 22Ω
Switched voltage: max. 400V AC; max. 400V DC
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Case: DIP8
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LAA110P IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49339891EA0C7&compId=LAA100.pdf?ci_sign=0aec29399b4e4aefd547e478bdb260a5ca7e1c58 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.66x6.35x2.16mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
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PAA110STR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4949C269B40C7&compId=PAA110.pdf?ci_sign=98ff0395432b6b3c34a6741a19df9265e735a6f5 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; OptoMOS
Contacts configuration: SPST-NO x2
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Turn-off time: 0.25ms
Turn-on time: 1ms
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 150mA
On-state resistance: 22Ω
Switched voltage: max. 400V AC; max. 400V DC
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Case: DIP8
товару немає в наявності
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LAA110L LAA110L IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B493F923AEC0C7&compId=LAA110L.pdf?ci_sign=c5d9dc6bd2f731b493e5c3213f701f4abd8a57f7 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: THT
Case: DIP8
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
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LAA110LS LAA110LS IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B493F923AEC0C7&compId=LAA110L.pdf?ci_sign=c5d9dc6bd2f731b493e5c3213f701f4abd8a57f7 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
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В кошику  од. на суму  грн.
LAA110PLTR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B493F923AEC0C7&compId=LAA110L.pdf?ci_sign=c5d9dc6bd2f731b493e5c3213f701f4abd8a57f7 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.66x6.35x2.16mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
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В кошику  од. на суму  грн.
LAA110PTR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49339892420C7&compId=LAA110.pdf?ci_sign=43a10e441f10ad751034a77a3d568ddab263c538 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.66x6.35x2.16mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
товару немає в наявності
В кошику  од. на суму  грн.
LAA110STR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49339892420C7&compId=LAA110.pdf?ci_sign=43a10e441f10ad751034a77a3d568ddab263c538 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
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PAA110LSTR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4949C269B40C7&compId=PAA110.pdf?ci_sign=98ff0395432b6b3c34a6741a19df9265e735a6f5 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; OptoMOS
Contacts configuration: SPST-NO x2
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Turn-off time: 0.25ms
Turn-on time: 1ms
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 150mA
On-state resistance: 22Ω
Switched voltage: max. 400V AC; max. 400V DC
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Case: DIP8
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PAA110PLTR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4949C269B40C7&compId=PAA110.pdf?ci_sign=98ff0395432b6b3c34a6741a19df9265e735a6f5 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; OptoMOS
Contacts configuration: SPST-NO x2
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Turn-off time: 0.25ms
Turn-on time: 1ms
Body dimensions: 9.65x6.35x2.16mm
Control current max.: 50mA
Max. operating current: 150mA
On-state resistance: 22Ω
Switched voltage: max. 400V AC; max. 400V DC
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Case: DIP8
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IXGN400N60A3 IXGN400N60A3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F2ECD2BBEEB820&compId=IXGN400N60A3.pdf?ci_sign=8a21fca6ac60404c1a68085a303adb5a72c3c627 Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 190A; SOT227B
Semiconductor structure: single transistor
Technology: GenX3™; PT
Type of semiconductor module: IGBT
Electrical mounting: screw
Mechanical mounting: screw
Collector current: 190A
Power dissipation: 830W
Gate-emitter voltage: ±20V
Pulsed collector current: 800A
Max. off-state voltage: 0.6kV
Case: SOT227B
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IXGN400N60B3 IXGN400N60B3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F2F019CE41B820&compId=IXGN400N60B3.pdf?ci_sign=67c9041076c20f7cbbce35e6237791751933bdc6 Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 200A; SOT227B
Semiconductor structure: single transistor
Technology: GenX3™; PT
Type of semiconductor module: IGBT
Electrical mounting: screw
Mechanical mounting: screw
Collector current: 200A
Power dissipation: 1kW
Gate-emitter voltage: ±20V
Pulsed collector current: 1.5kA
Max. off-state voltage: 0.6kV
Case: SOT227B
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IXGK400N30A3 IXGK400N30A3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99AE928C3F5451820&compId=IXGK(X)400N30A3.pdf?ci_sign=620a1db92159c5e67eff60170c2cd1cd5ba80b7c Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 300V; 200A; 1kW; TO264
Technology: GenX3™; PT
Type of transistor: IGBT
Mounting: THT
Kind of package: tube
Gate charge: 560nC
Turn-on time: 0.1µs
Turn-off time: 565ns
Collector current: 200A
Power dissipation: 1kW
Gate-emitter voltage: ±20V
Collector-emitter voltage: 300V
Pulsed collector current: 1.2kA
Case: TO264
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MIXG240RF1200PTED IXYS Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; X2PT
Semiconductor structure: diode/transistor
Topology: boost chopper
Technology: X2PT
Type of semiconductor module: IGBT
Electrical mounting: Press-Fit
Mechanical mounting: screw
Collector current: 250A
Max. off-state voltage: 1.2kV
Case: E2-Pack PFP
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MIXG240W1200PTEH IXYS Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Technology: X2PT
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Collector current: 233A
Max. off-state voltage: 1.2kV
Case: E3-Pack
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MIXG240W1200PZTEH IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDEB6DCE85AEE6B20D6&compId=MIXG240W1200PZTEH.pdf?ci_sign=f2d3a18c01367c0559f2b604264f860dda0ca401 Category: IGBT modules
Description: Module: IGBT; transistor/transistor; current shunt; Urmax: 1.2kV
Semiconductor structure: transistor/transistor
Topology: current shunt; IGBT three-phase bridge; NTC thermistor
Technology: X2PT
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Collector current: 233A
Max. off-state voltage: 1.2kV
Case: E3-Pack
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MIXG240W1200TEH IXYS media?resourcetype=datasheets&amp;itemid=da34aa4f-918f-4eb9-8e52-be6c5ad3ffe1&amp;filename=littelfuse%2520power%2520semiconductors%2520mixg240w1200teh%2520datasheet.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Technology: X2PT
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Collector current: 233A
Max. off-state voltage: 1.2kV
Case: E3-Pack
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DLA60I1200HA DLA60I1200HA IXYS pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BFEF25888C80A143&compId=DLA60I1200HA.pdf?ci_sign=6c4e6c7f1ad2792832ca08e41adebd5c5675cf1b Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 60A; tube; Ifsm: 850A; TO247-2; 500W
Kind of package: tube
Case: TO247-2
Semiconductor structure: single diode
Mounting: THT
Type of diode: rectifying
Max. forward voltage: 1.1V
Load current: 60A
Max. forward impulse current: 850A
Power dissipation: 500W
Max. off-state voltage: 1.2kV
на замовлення 274 шт:
термін постачання 21-30 дні (днів)
2+423.85 грн
3+347.70 грн
5+318.72 грн
10+317.92 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
CLA60MT1200NTZ CLA60MT1200NTZ IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98CEF9707D68B38BF&compId=CLA60MT1200NTZ.pdf?ci_sign=42d4db417915f82ec33b9b145dcc3e64a3365bd9 Category: Triacs
Description: Triac; 1.2kV; 30A; D3PAK; Igt: 60/80mA; Ifsm: 325A
Kind of package: tube
Case: D3PAK
Mounting: SMD
Type of thyristor: triac
Gate current: 60/80mA
Max. load current: 30A
Max. forward impulse current: 325A
Max. off-state voltage: 1.2kV
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
1+576.40 грн
В кошику  од. на суму  грн.
CPC3710CTR CPC3710CTR IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DC6D0B7F679D820&compId=CPC3710.pdf?ci_sign=39e865d4d80527d3d359204ffe81ed0050463eee Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 0.22A; 1.4W; SOT89
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 0.22A
Power dissipation: 1.4W
Case: SOT89
Gate-source voltage: ±15V
On-state resistance: 10Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
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VBE26-06NO7 VBE26-06NO7 IXYS mc784.pdf Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 44A; Ifsm: 95A; THT
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 44A
Max. forward impulse current: 95A
Electrical mounting: THT
Mechanical mounting: screw
Version: module
Case: ECO-PAC 1
Technology: FRED
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DSEI2X161-12P DSEI2X161-12P IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDA94E1ED4FFB35C0C4&compId=DSEI2X161-12P.pdf?ci_sign=343cf9432e0aec3e86e49b58542713c49e266df3 Category: Diode modules
Description: Module: diode; double independent; 1.2kV; If: 128Ax2; ECO-PAC 2
Max. off-state voltage: 1.2kV
Load current: 128A x2
Max. forward impulse current: 1.2kA
Electrical mounting: THT
Max. forward voltage: 1.9V
Case: ECO-PAC 2
Mechanical mounting: screw
Type of semiconductor module: diode
Semiconductor structure: double independent
на замовлення 33 шт:
термін постачання 21-30 дні (днів)
1+3085.68 грн
10+2788.82 грн
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VBO78-16NO7 VBO78-16NO7 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDA87803F5EBF49C0C4&compId=VBO78-16NO7.pdf?ci_sign=b964677d327b9c0e5ec3bc7faf326e2b7b5c4285 Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1.6kV; If: 80A; Ifsm: 750A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.6kV
Load current: 80A
Max. forward impulse current: 750A
Electrical mounting: THT
Version: module
Leads: wire Ø 1.5mm
Case: ECO-PAC 2
Mechanical mounting: screw
на замовлення 25 шт:
термін постачання 21-30 дні (днів)
1+1844.48 грн
3+1506.68 грн
10+1352.15 грн
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MDMA60B1600MB IXYS Category: Diode modules
Description: Module: diode; 1.6kV; 60A; ECO-PAC 1; THT; screw
Max. off-state voltage: 1.6kV
Load current: 60A
Electrical mounting: THT
Case: ECO-PAC 1
Mechanical mounting: screw
Type of semiconductor module: diode
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MMO140-16IO7 IXYS MMO140%2C%20MLO140.pdf Category: Thyristor modules
Description: Module: thyristor; opposing; 1.6kV; 58A; ECO-PAC 1; Ufmax: 1.75V
Max. off-state voltage: 1.6kV
Load current: 58A
Max. forward impulse current: 1.15kA
Electrical mounting: THT
Max. forward voltage: 1.75V
Leads: wire Ø 0.75mm
Case: ECO-PAC 1
Mechanical mounting: screw
Type of semiconductor module: thyristor
Semiconductor structure: opposing
Gate current: 100/200mA
Kind of package: bulk
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MMO175-16IO7 IXYS MMO175%2CMLO175.pdf Category: Thyristor modules
Description: Module: thyristor; opposing; 1.6kV; 80A; ECO-PAC 1; Ufmax: 1.57V
Max. off-state voltage: 1.6kV
Load current: 80A
Max. forward impulse current: 1.5kA
Electrical mounting: THT
Max. forward voltage: 1.57V
Leads: wire Ø 0.75mm
Case: ECO-PAC 1
Mechanical mounting: screw
Type of semiconductor module: thyristor
Semiconductor structure: opposing
Gate current: 100/200mA
Kind of package: bulk
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MMO230-16IO7 IXYS MMO230,%20MLO230.pdf Category: Thyristor modules
Description: Module: thyristor; opposing; 1.6kV; 105A; ECO-PAC 2; Ufmax: 1.5V
Max. off-state voltage: 1.6kV
Load current: 105A
Max. forward impulse current: 2.25kA
Electrical mounting: THT
Max. forward voltage: 1.5V
Leads: wire Ø 0.75mm
Case: ECO-PAC 2
Mechanical mounting: screw
Type of semiconductor module: thyristor
Semiconductor structure: opposing
Gate current: 150/200mA
Kind of package: bulk
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DSEI2x161-02P DSEI2x161-02P IXYS media?resourcetype=datasheets&itemid=9f851867-dcfc-451c-a7e2-2d8510ce8b35&filename=littelfuse%2520power%2520semiconductors%2520dsei2x161-02p%2520datasheet.pdf Category: Diode modules
Description: Module: diode; double independent; 200V; If: 165Ax2; ECO-PAC 2
Max. off-state voltage: 200V
Load current: 165A x2
Max. forward impulse current: 1.2kA
Electrical mounting: THT
Max. forward voltage: 1.2V
Case: ECO-PAC 2
Mechanical mounting: screw
Type of semiconductor module: diode
Semiconductor structure: double independent
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VCO180-16io7 IXYS media?resourcetype=datasheets&itemid=37D7082B-154B-4541-8F4D-CA2A0A0EB94E&filename=Littelfuse-Power-Semiconductors-VCO180-Datasheet Category: Thyristor modules
Description: Module: thyristor; single thyristor; 1.6kV; 180A; ECO-PAC 2; THT
Max. off-state voltage: 1.6kV
Load current: 180A
Electrical mounting: THT
Max. forward voltage: 1.1V
Leads: wire Ø 1.5mm
Case: ECO-PAC 2
Mechanical mounting: screw
Type of semiconductor module: thyristor
Semiconductor structure: single thyristor
Gate current: 300/400mA
Kind of package: bulk
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VCO132-16io7 IXYS media?resourcetype=datasheets&itemid=4A4823B7-9DA2-42A8-AB21-7595BE04F574&filename=Littelfuse-Power-Semiconductors-VCO132-Datasheet Category: Thyristor modules
Description: Module: thyristor; single thyristor; 1.6kV; 130A; ECO-PAC 2; THT
Max. off-state voltage: 1.6kV
Load current: 130A
Electrical mounting: THT
Max. forward voltage: 1.3V
Leads: wire Ø 1.5mm
Case: ECO-PAC 2
Mechanical mounting: screw
Type of semiconductor module: thyristor
Semiconductor structure: single thyristor
Gate current: 300/400mA
Kind of package: bulk
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MKI75-06A7T IXYS Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 600V; Ic: 60A
Collector current: 60A
Power dissipation: 280W
Case: E2-Pack
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Max. off-state voltage: 0.6kV
Technology: NPT
Application: for UPS; motors
Topology: H-bridge
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
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MWI75-06A7T IXYS Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Collector current: 60A
Power dissipation: 280W
Case: E2-Pack
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Max. off-state voltage: 0.6kV
Technology: NPT
Application: motors
Topology: IGBT three-phase bridge; NTC thermistor
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
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DSEP2X61-03A description pVersion=0046&contRep=ZT&docId=005056AB82531EE98C889CC97A9AD8BF&compId=DSEP2x61-03A.pdf?ci_sign=fefb71e7c146efb6bbde3c29fbc2ca054f68b484
DSEP2X61-03A
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double independent; 300V; If: 60Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 300V
Load current: 60A x2
Case: SOT227B
Max. forward voltage: 1.11V
Max. forward impulse current: 0.6kA
Electrical mounting: screw
Max. load current: 60A
Mechanical mounting: screw
Technology: HiPerFRED™
на замовлення 69 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+2055.10 грн
3+1901.87 грн
В кошику  од. на суму  грн.
DPF240X200NA DPF240X200NA.pdf
DPF240X200NA
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double independent; 200V; If: 120Ax2; SOT227B; screw
Max. forward voltage: 1.06V
Max. load current: 120A
Load current: 120A x2
Max. off-state voltage: 200V
Max. forward impulse current: 1.2kA
Electrical mounting: screw
Mechanical mounting: screw
Case: SOT227B
Semiconductor structure: double independent
Type of semiconductor module: diode
на замовлення 56 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+3081.35 грн
3+2549.77 грн
9+2513.56 грн
В кошику  од. на суму  грн.
DSS2X121-0045B description pVersion=0046&contRep=ZT&docId=005056AB82531EE991AF3EBF7307B8BF&compId=DSS2x121-0045B.pdf?ci_sign=ac4f5fa5561f8409b6a19db0a7e44ae5c19d1449
DSS2X121-0045B
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double independent; 45V; If: 120Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 45V
Load current: 120A x2
Case: SOT227B
Max. forward voltage: 0.59V
Max. forward impulse current: 1.6kA
Electrical mounting: screw
Max. load current: 120A
Mechanical mounting: screw
Features of semiconductor devices: Schottky
на замовлення 17 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+2570.82 грн
3+2110.32 грн
10+1897.84 грн
В кошику  од. на суму  грн.
MCO150-16IO1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FF25B90517B35EA&compId=MCO150-16IO1.pdf?ci_sign=46874172e95e49a2ec6ad9fcf27e90ddeba41775
MCO150-16IO1
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; single thyristor; 1.6kV; 158A; SOT227B; screw
Type of semiconductor module: thyristor
Semiconductor structure: single thyristor
Max. off-state voltage: 1.6kV
Load current: 158A
Case: SOT227B
Max. forward voltage: 1.78V
Max. forward impulse current: 2.16kA
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
Gate current: 150/200mA
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+2829.99 грн
В кошику  од. на суму  грн.
IXDD630MYI pVersion=0046&contRep=ZT&docId=005056AB82531EE98D875D8EAC1A78BF&compId=IXD_630.pdf?ci_sign=6691b6fa21018ff2c79d3fb6449ba0909ac8793c
IXDD630MYI
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -30÷30A; Ch: 1; 9÷35V
Kind of package: tube
Operating temperature: -40...125°C
Output current: -30...30A
Turn-off time: 135ns
Turn-on time: 135ns
Number of channels: 1
Supply voltage: 9...35V
Case: TO263-5
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Mounting: SMD
Kind of output: non-inverting
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IXDD630MCI pVersion=0046&contRep=ZT&docId=005056AB82531EE98D875D8EAC1A78BF&compId=IXD_630.pdf?ci_sign=6691b6fa21018ff2c79d3fb6449ba0909ac8793c
IXDD630MCI
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -30÷30A; Ch: 1; 9÷35V
Kind of package: tube
Operating temperature: -40...125°C
Output current: -30...30A
Turn-off time: 135ns
Turn-on time: 135ns
Number of channels: 1
Supply voltage: 9...35V
Case: TO220-5
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Mounting: THT
Kind of output: non-inverting
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IXTQ470P2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9752F13FF820&compId=IXTQ470P2.pdf?ci_sign=76af40f262edd6db225179a4687589ac6121f39b
IXTQ470P2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 42A; 830W; TO3P; 400ns
Case: TO3P
Mounting: THT
On-state resistance: 0.145Ω
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Polarisation: unipolar
Gate charge: 88nC
Reverse recovery time: 400ns
Drain current: 42A
Drain-source voltage: 500V
Power dissipation: 830W
Kind of channel: enhancement
Type of transistor: N-MOSFET
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CS45-12IO1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A7A1C90DA181DE27&compId=CS45-08IO1-DTE.pdf?ci_sign=370091429d5995645cf0ec659bab53cef7de1ae0
CS45-12IO1
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 71A; 45A; Igt: 80mA; TO247AD; THT; tube
Max. off-state voltage: 1.2kV
Load current: 45A
Case: TO247AD
Mounting: THT
Max. load current: 71A
Max. forward impulse current: 520A
Kind of package: tube
Type of thyristor: thyristor
Gate current: 80mA
на замовлення 297 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+451.58 грн
5+329.18 грн
10+290.55 грн
30+267.21 грн
В кошику  од. на суму  грн.
IXTX102N65X2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3A30509622B9820&compId=IXTK(X)102N65X2.pdf?ci_sign=179728ba4b6154ce0a3f464c48ebd958f7ec0bd6
IXTX102N65X2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 102A; 1040W; PLUS247™; 450ns
Case: PLUS247™
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Type of transistor: N-MOSFET
Features of semiconductor devices: ultra junction x-class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 102A
Reverse recovery time: 450ns
Gate charge: 152nC
On-state resistance: 30mΩ
Power dissipation: 1.04kW
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IXTP48P05T pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA0C43F950B18BF&compId=IXT_48P05T.pdf?ci_sign=f2ae0764a4420e9e69779cd81a0b142c17b0cc14
IXTP48P05T
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -48A; 150W; TO220AB
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -48A
Reverse recovery time: 30ns
Gate charge: 53nC
On-state resistance: 30mΩ
Gate-source voltage: ±15V
Power dissipation: 150W
на замовлення 295 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+289.50 грн
10+206.85 грн
50+175.46 грн
100+169.82 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXTP44N10T pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D51AD1A84D5820&compId=IXTP(Y)44N10T.pdf?ci_sign=241a5f60ac60b85bce90b3648c8e3960e337142a
IXTP44N10T
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 44A; 130W; TO220AB; 60ns
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Type of transistor: N-MOSFET
Features of semiconductor devices: thrench gate power mosfet
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 44A
Reverse recovery time: 60ns
On-state resistance: 30mΩ
Power dissipation: 130W
на замовлення 158 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
4+143.88 грн
10+103.83 грн
50+78.88 грн
100+70.83 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IXTY44N10T pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D51AD1A84D5820&compId=IXTP(Y)44N10T.pdf?ci_sign=241a5f60ac60b85bce90b3648c8e3960e337142a
IXTY44N10T
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 44A; 130W; TO252; 60ns
Case: TO252
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Type of transistor: N-MOSFET
Features of semiconductor devices: thrench gate power mosfet
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 44A
Reverse recovery time: 60ns
On-state resistance: 30mΩ
Power dissipation: 130W
на замовлення 288 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+172.49 грн
10+139.24 грн
25+112.68 грн
70+97.39 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IXTY48P05T pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA0C43F950B18BF&compId=IXT_48P05T.pdf?ci_sign=f2ae0764a4420e9e69779cd81a0b142c17b0cc14
IXTY48P05T
Виробник: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -48A; 150W; TO252
Case: TO252
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -48A
Reverse recovery time: 30ns
Gate charge: 53nC
On-state resistance: 30mΩ
Gate-source voltage: ±15V
Power dissipation: 150W
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IXTA48P05T pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA0C43F950B18BF&compId=IXT_48P05T.pdf?ci_sign=f2ae0764a4420e9e69779cd81a0b142c17b0cc14
IXTA48P05T
Виробник: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -48A; 150W; TO263
Case: TO263
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -48A
Reverse recovery time: 30ns
Gate charge: 53nC
On-state resistance: 30mΩ
Gate-source voltage: ±15V
Power dissipation: 150W
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IXTK120P20T pVersion=0046&contRep=ZT&docId=005056AB82531EE98E9EA563468D18BF&compId=IXT_120P20T.pdf?ci_sign=b303308099e4550f537d8d87d7d46f104218dd25
IXTK120P20T
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -200V; -120A; 1040W
Case: PLUS264™
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -120A
Reverse recovery time: 300ns
Gate charge: 740nC
On-state resistance: 30mΩ
Gate-source voltage: ±15V
Power dissipation: 1.04kW
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IXTK102N65X2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3A30509622B9820&compId=IXTK(X)102N65X2.pdf?ci_sign=179728ba4b6154ce0a3f464c48ebd958f7ec0bd6
IXTK102N65X2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 102A; 1040W; TO264; 450ns
Case: TO264
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Type of transistor: N-MOSFET
Features of semiconductor devices: ultra junction x-class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 102A
Reverse recovery time: 450ns
Gate charge: 152nC
On-state resistance: 30mΩ
Power dissipation: 1.04kW
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IXTN120P20T pVersion=0046&contRep=ZT&docId=005056AB752F1EE79794A7765FE1E748&compId=IXTN120P20T.pdf?ci_sign=424025f9bccd2160baf20cb9a4a14aba3d44a2f2
IXTN120P20T
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; -200V; -106A; SOT227B; screw; Idm: -400A
Case: SOT227B
Semiconductor structure: single transistor
Kind of channel: enhancement
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Electrical mounting: screw
Technology: TrenchP™
Polarisation: unipolar
Pulsed drain current: -400A
Drain-source voltage: -200V
Drain current: -106A
Reverse recovery time: 300ns
Gate charge: 740nC
On-state resistance: 30mΩ
Gate-source voltage: ±15V
Power dissipation: 830W
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IXTN102N65X2 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EF9E6330B4C1820&compId=IXTN102N65X2.pdf?ci_sign=9e7b58dfb51537d8509f57c064d3549be58d17de
IXTN102N65X2
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 650V; 76A; SOT227B; screw; Idm: 204A
Case: SOT227B
Semiconductor structure: single transistor
Kind of channel: enhancement
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Electrical mounting: screw
Technology: X2-Class
Polarisation: unipolar
Pulsed drain current: 204A
Drain-source voltage: 650V
Drain current: 76A
Reverse recovery time: 450ns
Gate charge: 152nC
On-state resistance: 30mΩ
Gate-source voltage: ±40V
Power dissipation: 595W
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DAA200X1800NA pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA995824A0EA360C7&compId=DAA200X1800NA.pdf?ci_sign=db1937538aeee57eb4a8511896da8a8361264e03
DAA200X1800NA
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double independent; 1.8kV; If: 100Ax2; SOT227B
Type of semiconductor module: diode
Semiconductor structure: double independent
Mechanical mounting: screw
Electrical mounting: screw
Case: SOT227B
Max. forward voltage: 1.21V
Load current: 100A x2
Max. forward impulse current: 1.5kA
Max. off-state voltage: 1.8kV
Features of semiconductor devices: avalanche breakdown effect
на замовлення 74 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+2570.82 грн
3+2309.12 грн
10+2152.98 грн
30+2096.64 грн
В кошику  од. на суму  грн.
CLA15E1200NPZ-TUB pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCB5B432A891E0C4&compId=CLA15E1200NPZ.pdf?ci_sign=2ea2a8fa3bab3e7257fd2545af159cb17839baac
CLA15E1200NPZ-TUB
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 33A; 15A; Igt: 20/40mA; TO263ABHV; SMD; tube
Mounting: SMD
Type of thyristor: thyristor
Case: TO263ABHV
Kind of package: tube
Features of semiconductor devices: two gate polarities
Gate current: 20/40mA
Load current: 15A
Max. load current: 33A
Max. forward impulse current: 0.145kA
Max. off-state voltage: 1.2kV
на замовлення 50 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+153.42 грн
4+127.97 грн
10+113.48 грн
50+103.02 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
MCO150-12IO1 littelfuse-power-semiconductors-mco150-12io1-datasheet?assetguid=f9ee00e6-1e95-47df-b091-c9d6d91a784d
MCO150-12IO1
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; single thyristor; 1.2kV; 158A; SOT227B; screw
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single thyristor
Case: SOT227B
Type of semiconductor module: thyristor
Gate current: 150/200mA
Max. forward voltage: 1.89V
Load current: 158A
Max. off-state voltage: 1.2kV
Kind of package: bulk
на замовлення 4 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+2839.52 грн
В кошику  од. на суму  грн.
LAA110 pVersion=0046&contRep=ZT&docId=005056AB82531EE995A47459C0E698BF&compId=LAA110.pdf?ci_sign=ccd17f31175d39f76946339f4bf405c57c47714b
LAA110
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Kind of output: MOSFET
Manufacturer series: OptoMOS
Mounting: THT
Operating temperature: -40...85°C
Turn-on time: 3ms
Turn-off time: 3ms
Body dimensions: 9.65x6.35x3.3mm
Max. operating current: 120mA
Control current max.: 50mA
On-state resistance: 35Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP8
Type of relay: solid state
Contacts configuration: SPST-NO x2
на замовлення 186 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+308.57 грн
5+259.16 грн
10+239.85 грн
30+228.58 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
LAA110PL pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B493F923AEC0C7&compId=LAA110L.pdf?ci_sign=c5d9dc6bd2f731b493e5c3213f701f4abd8a57f7
LAA110PL
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Kind of output: MOSFET
Manufacturer series: OptoMOS
Mounting: SMT
Operating temperature: -40...85°C
Turn-on time: 3ms
Turn-off time: 3ms
Body dimensions: 9.66x6.35x2.16mm
Max. operating current: 120mA
Control current max.: 50mA
On-state resistance: 35Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP8
Type of relay: solid state
Contacts configuration: SPST-NO x2
на замовлення 295 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+306.83 грн
10+251.11 грн
100+230.99 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
LAA110S pVersion=0046&contRep=ZT&docId=005056AB82531EE995A47459C0E698BF&compId=LAA110.pdf?ci_sign=ccd17f31175d39f76946339f4bf405c57c47714b
LAA110S
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Kind of output: MOSFET
Manufacturer series: OptoMOS
Mounting: SMT
Operating temperature: -40...85°C
Turn-on time: 3ms
Turn-off time: 3ms
Body dimensions: 9.65x6.35x3.3mm
Max. operating current: 120mA
Control current max.: 50mA
On-state resistance: 35Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP8
Type of relay: solid state
Contacts configuration: SPST-NO x2
на замовлення 218 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+383.11 грн
50+300.21 грн
100+284.92 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
PAA110LS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4949C269D20C7&compId=PAA110L.pdf?ci_sign=0eb0eb70862b50b325e34277b7cc4b8023f30085
PAA110LS
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; OptoMOS
Contacts configuration: SPST-NO x2
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Turn-off time: 0.25ms
Turn-on time: 1ms
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 150mA
On-state resistance: 22Ω
Switched voltage: max. 400V AC; max. 400V DC
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Case: DIP8
на замовлення 171 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+403.91 грн
50+351.72 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
PAA110PL pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4949C269D20C7&compId=PAA110L.pdf?ci_sign=0eb0eb70862b50b325e34277b7cc4b8023f30085
PAA110PL
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; OptoMOS
Contacts configuration: SPST-NO x2
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Turn-off time: 0.25ms
Turn-on time: 1ms
Body dimensions: 9.65x6.35x2.16mm
Control current max.: 50mA
Max. operating current: 150mA
On-state resistance: 22Ω
Switched voltage: max. 400V AC; max. 400V DC
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Case: DIP8
на замовлення 98 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+464.59 грн
10+351.72 грн
В кошику  од. на суму  грн.
PAA110S pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4949C269B40C7&compId=PAA110.pdf?ci_sign=98ff0395432b6b3c34a6741a19df9265e735a6f5
PAA110S
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; OptoMOS
Contacts configuration: SPST-NO x2
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Turn-off time: 0.25ms
Turn-on time: 1ms
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 150mA
On-state resistance: 22Ω
Switched voltage: max. 400V AC; max. 400V DC
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Case: DIP8
на замовлення 90 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+487.12 грн
10+382.31 грн
50+346.09 грн
В кошику  од. на суму  грн.
PAA110 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4949C269B40C7&compId=PAA110.pdf?ci_sign=98ff0395432b6b3c34a6741a19df9265e735a6f5
PAA110
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; OptoMOS
Contacts configuration: SPST-NO x2
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Kind of output: MOSFET
Mounting: THT
Type of relay: solid state
Turn-off time: 0.25ms
Turn-on time: 1ms
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 150mA
On-state resistance: 22Ω
Switched voltage: max. 400V AC; max. 400V DC
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Case: DIP8
на замовлення 43 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+465.45 грн
В кошику  од. на суму  грн.
PAA110L pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4949C269D20C7&compId=PAA110L.pdf?ci_sign=0eb0eb70862b50b325e34277b7cc4b8023f30085
PAA110L
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; OptoMOS
Contacts configuration: SPST-NO x2
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Kind of output: MOSFET
Mounting: THT
Type of relay: solid state
Turn-off time: 0.25ms
Turn-on time: 1ms
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 150mA
On-state resistance: 22Ω
Switched voltage: max. 400V AC; max. 400V DC
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Case: DIP8
товару немає в наявності
В кошику  од. на суму  грн.
LAA110P pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49339891EA0C7&compId=LAA100.pdf?ci_sign=0aec29399b4e4aefd547e478bdb260a5ca7e1c58
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.66x6.35x2.16mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
товару немає в наявності
В кошику  од. на суму  грн.
PAA110STR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4949C269B40C7&compId=PAA110.pdf?ci_sign=98ff0395432b6b3c34a6741a19df9265e735a6f5
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; OptoMOS
Contacts configuration: SPST-NO x2
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Turn-off time: 0.25ms
Turn-on time: 1ms
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 150mA
On-state resistance: 22Ω
Switched voltage: max. 400V AC; max. 400V DC
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Case: DIP8
товару немає в наявності
В кошику  од. на суму  грн.
LAA110L pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B493F923AEC0C7&compId=LAA110L.pdf?ci_sign=c5d9dc6bd2f731b493e5c3213f701f4abd8a57f7
LAA110L
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: THT
Case: DIP8
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
товару немає в наявності
В кошику  од. на суму  грн.
LAA110LS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B493F923AEC0C7&compId=LAA110L.pdf?ci_sign=c5d9dc6bd2f731b493e5c3213f701f4abd8a57f7
LAA110LS
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
товару немає в наявності
В кошику  од. на суму  грн.
LAA110PLTR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B493F923AEC0C7&compId=LAA110L.pdf?ci_sign=c5d9dc6bd2f731b493e5c3213f701f4abd8a57f7
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.66x6.35x2.16mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
товару немає в наявності
В кошику  од. на суму  грн.
LAA110PTR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49339892420C7&compId=LAA110.pdf?ci_sign=43a10e441f10ad751034a77a3d568ddab263c538
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.66x6.35x2.16mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
товару немає в наявності
В кошику  од. на суму  грн.
LAA110STR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49339892420C7&compId=LAA110.pdf?ci_sign=43a10e441f10ad751034a77a3d568ddab263c538
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
товару немає в наявності
В кошику  од. на суму  грн.
PAA110LSTR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4949C269B40C7&compId=PAA110.pdf?ci_sign=98ff0395432b6b3c34a6741a19df9265e735a6f5
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; OptoMOS
Contacts configuration: SPST-NO x2
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Turn-off time: 0.25ms
Turn-on time: 1ms
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 150mA
On-state resistance: 22Ω
Switched voltage: max. 400V AC; max. 400V DC
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Case: DIP8
товару немає в наявності
В кошику  од. на суму  грн.
PAA110PLTR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4949C269B40C7&compId=PAA110.pdf?ci_sign=98ff0395432b6b3c34a6741a19df9265e735a6f5
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; OptoMOS
Contacts configuration: SPST-NO x2
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Turn-off time: 0.25ms
Turn-on time: 1ms
Body dimensions: 9.65x6.35x2.16mm
Control current max.: 50mA
Max. operating current: 150mA
On-state resistance: 22Ω
Switched voltage: max. 400V AC; max. 400V DC
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Case: DIP8
товару немає в наявності
В кошику  од. на суму  грн.
IXGN400N60A3 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F2ECD2BBEEB820&compId=IXGN400N60A3.pdf?ci_sign=8a21fca6ac60404c1a68085a303adb5a72c3c627
IXGN400N60A3
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 190A; SOT227B
Semiconductor structure: single transistor
Technology: GenX3™; PT
Type of semiconductor module: IGBT
Electrical mounting: screw
Mechanical mounting: screw
Collector current: 190A
Power dissipation: 830W
Gate-emitter voltage: ±20V
Pulsed collector current: 800A
Max. off-state voltage: 0.6kV
Case: SOT227B
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IXGN400N60B3 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F2F019CE41B820&compId=IXGN400N60B3.pdf?ci_sign=67c9041076c20f7cbbce35e6237791751933bdc6
IXGN400N60B3
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 200A; SOT227B
Semiconductor structure: single transistor
Technology: GenX3™; PT
Type of semiconductor module: IGBT
Electrical mounting: screw
Mechanical mounting: screw
Collector current: 200A
Power dissipation: 1kW
Gate-emitter voltage: ±20V
Pulsed collector current: 1.5kA
Max. off-state voltage: 0.6kV
Case: SOT227B
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IXGK400N30A3 pVersion=0046&contRep=ZT&docId=005056AB82531ED99AE928C3F5451820&compId=IXGK(X)400N30A3.pdf?ci_sign=620a1db92159c5e67eff60170c2cd1cd5ba80b7c
IXGK400N30A3
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 300V; 200A; 1kW; TO264
Technology: GenX3™; PT
Type of transistor: IGBT
Mounting: THT
Kind of package: tube
Gate charge: 560nC
Turn-on time: 0.1µs
Turn-off time: 565ns
Collector current: 200A
Power dissipation: 1kW
Gate-emitter voltage: ±20V
Collector-emitter voltage: 300V
Pulsed collector current: 1.2kA
Case: TO264
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MIXG240RF1200PTED
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; X2PT
Semiconductor structure: diode/transistor
Topology: boost chopper
Technology: X2PT
Type of semiconductor module: IGBT
Electrical mounting: Press-Fit
Mechanical mounting: screw
Collector current: 250A
Max. off-state voltage: 1.2kV
Case: E2-Pack PFP
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MIXG240W1200PTEH
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Technology: X2PT
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Collector current: 233A
Max. off-state voltage: 1.2kV
Case: E3-Pack
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MIXG240W1200PZTEH pVersion=0046&contRep=ZT&docId=005056AB281E1EDEB6DCE85AEE6B20D6&compId=MIXG240W1200PZTEH.pdf?ci_sign=f2d3a18c01367c0559f2b604264f860dda0ca401
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; current shunt; Urmax: 1.2kV
Semiconductor structure: transistor/transistor
Topology: current shunt; IGBT three-phase bridge; NTC thermistor
Technology: X2PT
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Collector current: 233A
Max. off-state voltage: 1.2kV
Case: E3-Pack
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MIXG240W1200TEH media?resourcetype=datasheets&amp;itemid=da34aa4f-918f-4eb9-8e52-be6c5ad3ffe1&amp;filename=littelfuse%2520power%2520semiconductors%2520mixg240w1200teh%2520datasheet.pdf
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Technology: X2PT
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Collector current: 233A
Max. off-state voltage: 1.2kV
Case: E3-Pack
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DLA60I1200HA pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BFEF25888C80A143&compId=DLA60I1200HA.pdf?ci_sign=6c4e6c7f1ad2792832ca08e41adebd5c5675cf1b
DLA60I1200HA
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 60A; tube; Ifsm: 850A; TO247-2; 500W
Kind of package: tube
Case: TO247-2
Semiconductor structure: single diode
Mounting: THT
Type of diode: rectifying
Max. forward voltage: 1.1V
Load current: 60A
Max. forward impulse current: 850A
Power dissipation: 500W
Max. off-state voltage: 1.2kV
на замовлення 274 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+423.85 грн
3+347.70 грн
5+318.72 грн
10+317.92 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
CLA60MT1200NTZ pVersion=0046&contRep=ZT&docId=005056AB82531EE98CEF9707D68B38BF&compId=CLA60MT1200NTZ.pdf?ci_sign=42d4db417915f82ec33b9b145dcc3e64a3365bd9
CLA60MT1200NTZ
Виробник: IXYS
Category: Triacs
Description: Triac; 1.2kV; 30A; D3PAK; Igt: 60/80mA; Ifsm: 325A
Kind of package: tube
Case: D3PAK
Mounting: SMD
Type of thyristor: triac
Gate current: 60/80mA
Max. load current: 30A
Max. forward impulse current: 325A
Max. off-state voltage: 1.2kV
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+576.40 грн
В кошику  од. на суму  грн.
CPC3710CTR pVersion=0046&contRep=ZT&docId=005056AB82531ED99DC6D0B7F679D820&compId=CPC3710.pdf?ci_sign=39e865d4d80527d3d359204ffe81ed0050463eee
CPC3710CTR
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 0.22A; 1.4W; SOT89
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 0.22A
Power dissipation: 1.4W
Case: SOT89
Gate-source voltage: ±15V
On-state resistance: 10Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
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VBE26-06NO7 mc784.pdf
VBE26-06NO7
Виробник: IXYS
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 44A; Ifsm: 95A; THT
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 44A
Max. forward impulse current: 95A
Electrical mounting: THT
Mechanical mounting: screw
Version: module
Case: ECO-PAC 1
Technology: FRED
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DSEI2X161-12P pVersion=0046&contRep=ZT&docId=005056AB90B41EDA94E1ED4FFB35C0C4&compId=DSEI2X161-12P.pdf?ci_sign=343cf9432e0aec3e86e49b58542713c49e266df3
DSEI2X161-12P
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double independent; 1.2kV; If: 128Ax2; ECO-PAC 2
Max. off-state voltage: 1.2kV
Load current: 128A x2
Max. forward impulse current: 1.2kA
Electrical mounting: THT
Max. forward voltage: 1.9V
Case: ECO-PAC 2
Mechanical mounting: screw
Type of semiconductor module: diode
Semiconductor structure: double independent
на замовлення 33 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+3085.68 грн
10+2788.82 грн
В кошику  од. на суму  грн.
VBO78-16NO7 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA87803F5EBF49C0C4&compId=VBO78-16NO7.pdf?ci_sign=b964677d327b9c0e5ec3bc7faf326e2b7b5c4285
VBO78-16NO7
Виробник: IXYS
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1.6kV; If: 80A; Ifsm: 750A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.6kV
Load current: 80A
Max. forward impulse current: 750A
Electrical mounting: THT
Version: module
Leads: wire Ø 1.5mm
Case: ECO-PAC 2
Mechanical mounting: screw
на замовлення 25 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1844.48 грн
3+1506.68 грн
10+1352.15 грн
В кошику  од. на суму  грн.
MDMA60B1600MB
Виробник: IXYS
Category: Diode modules
Description: Module: diode; 1.6kV; 60A; ECO-PAC 1; THT; screw
Max. off-state voltage: 1.6kV
Load current: 60A
Electrical mounting: THT
Case: ECO-PAC 1
Mechanical mounting: screw
Type of semiconductor module: diode
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MMO140-16IO7 MMO140%2C%20MLO140.pdf
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; opposing; 1.6kV; 58A; ECO-PAC 1; Ufmax: 1.75V
Max. off-state voltage: 1.6kV
Load current: 58A
Max. forward impulse current: 1.15kA
Electrical mounting: THT
Max. forward voltage: 1.75V
Leads: wire Ø 0.75mm
Case: ECO-PAC 1
Mechanical mounting: screw
Type of semiconductor module: thyristor
Semiconductor structure: opposing
Gate current: 100/200mA
Kind of package: bulk
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MMO175-16IO7 MMO175%2CMLO175.pdf
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; opposing; 1.6kV; 80A; ECO-PAC 1; Ufmax: 1.57V
Max. off-state voltage: 1.6kV
Load current: 80A
Max. forward impulse current: 1.5kA
Electrical mounting: THT
Max. forward voltage: 1.57V
Leads: wire Ø 0.75mm
Case: ECO-PAC 1
Mechanical mounting: screw
Type of semiconductor module: thyristor
Semiconductor structure: opposing
Gate current: 100/200mA
Kind of package: bulk
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MMO230-16IO7 MMO230,%20MLO230.pdf
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; opposing; 1.6kV; 105A; ECO-PAC 2; Ufmax: 1.5V
Max. off-state voltage: 1.6kV
Load current: 105A
Max. forward impulse current: 2.25kA
Electrical mounting: THT
Max. forward voltage: 1.5V
Leads: wire Ø 0.75mm
Case: ECO-PAC 2
Mechanical mounting: screw
Type of semiconductor module: thyristor
Semiconductor structure: opposing
Gate current: 150/200mA
Kind of package: bulk
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DSEI2x161-02P media?resourcetype=datasheets&itemid=9f851867-dcfc-451c-a7e2-2d8510ce8b35&filename=littelfuse%2520power%2520semiconductors%2520dsei2x161-02p%2520datasheet.pdf
DSEI2x161-02P
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double independent; 200V; If: 165Ax2; ECO-PAC 2
Max. off-state voltage: 200V
Load current: 165A x2
Max. forward impulse current: 1.2kA
Electrical mounting: THT
Max. forward voltage: 1.2V
Case: ECO-PAC 2
Mechanical mounting: screw
Type of semiconductor module: diode
Semiconductor structure: double independent
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VCO180-16io7 media?resourcetype=datasheets&itemid=37D7082B-154B-4541-8F4D-CA2A0A0EB94E&filename=Littelfuse-Power-Semiconductors-VCO180-Datasheet
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; single thyristor; 1.6kV; 180A; ECO-PAC 2; THT
Max. off-state voltage: 1.6kV
Load current: 180A
Electrical mounting: THT
Max. forward voltage: 1.1V
Leads: wire Ø 1.5mm
Case: ECO-PAC 2
Mechanical mounting: screw
Type of semiconductor module: thyristor
Semiconductor structure: single thyristor
Gate current: 300/400mA
Kind of package: bulk
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VCO132-16io7 media?resourcetype=datasheets&itemid=4A4823B7-9DA2-42A8-AB21-7595BE04F574&filename=Littelfuse-Power-Semiconductors-VCO132-Datasheet
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; single thyristor; 1.6kV; 130A; ECO-PAC 2; THT
Max. off-state voltage: 1.6kV
Load current: 130A
Electrical mounting: THT
Max. forward voltage: 1.3V
Leads: wire Ø 1.5mm
Case: ECO-PAC 2
Mechanical mounting: screw
Type of semiconductor module: thyristor
Semiconductor structure: single thyristor
Gate current: 300/400mA
Kind of package: bulk
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MKI75-06A7T
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 600V; Ic: 60A
Collector current: 60A
Power dissipation: 280W
Case: E2-Pack
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Max. off-state voltage: 0.6kV
Technology: NPT
Application: for UPS; motors
Topology: H-bridge
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
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MWI75-06A7T
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Collector current: 60A
Power dissipation: 280W
Case: E2-Pack
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Max. off-state voltage: 0.6kV
Technology: NPT
Application: motors
Topology: IGBT three-phase bridge; NTC thermistor
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
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