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IXTN22N100L IXTN22N100L IXYS IXTN22N100L.pdf Category: Transistor modules
Description: Module; single transistor; 1kV; 22A; SOT227B; screw; Idm: 50A; 700W
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1kV
Drain current: 22A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.6Ω
Pulsed drain current: 50A
Power dissipation: 700W
Technology: Linear™
Kind of channel: enhancement
Gate charge: 0.27µC
Reverse recovery time: 1µs
Gate-source voltage: ±40V
Mechanical mounting: screw
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IXTN62N50L IXTN62N50L IXYS IXTN62N50L.pdf Category: Transistor modules
Description: Module; single transistor; 500V; 62A; SOT227B; screw; Idm: 150A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 500V
Drain current: 62A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.1Ω
Pulsed drain current: 150A
Power dissipation: 800W
Technology: Linear™
Kind of channel: enhancement
Gate charge: 550nC
Reverse recovery time: 0.5µs
Gate-source voltage: ±40V
Mechanical mounting: screw
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IXTN200N10L2 IXTN200N10L2 IXYS IXTN200N10L2.pdf Category: Transistor modules
Description: Module; single transistor; 100V; 178A; SOT227B; screw; Idm: 500A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 100V
Drain current: 178A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 11mΩ
Pulsed drain current: 500A
Power dissipation: 830W
Technology: Linear L2™
Kind of channel: enhancement
Gate charge: 540nC
Reverse recovery time: 245ns
Gate-source voltage: ±30V
Mechanical mounting: screw
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IXTN17N120L IXTN17N120L IXYS IXTN17N120L.pdf Category: Transistor modules
Description: Module; single transistor; 1.2kV; 15A; SOT227B; screw; Idm: 34A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.2kV
Drain current: 15A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.9Ω
Pulsed drain current: 34A
Power dissipation: 540W
Technology: Linear™
Kind of channel: enhancement
Gate charge: 155nC
Reverse recovery time: 1.83µs
Gate-source voltage: ±40V
Mechanical mounting: screw
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IXTN40P50P IXTN40P50P IXYS IXTN40P50P.pdf Category: Transistor modules
Description: Module; single transistor; -500V; -40A; SOT227B; screw; Idm: -120A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: -500V
Drain current: -40A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.23Ω
Pulsed drain current: -120A
Power dissipation: 890W
Technology: PolarP™
Kind of channel: enhancement
Gate charge: 205nC
Reverse recovery time: 477ns
Gate-source voltage: ±30V
Mechanical mounting: screw
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IXTN240N075L2 IXTN240N075L2 IXYS IXTN240N075L2.pdf Category: Transistor modules
Description: Module; single transistor; 75V; 225A; SOT227B; screw; Idm: 720A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 75V
Drain current: 225A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 7mΩ
Pulsed drain current: 720A
Power dissipation: 735W
Technology: Linear L2™
Kind of channel: enhancement
Gate charge: 546nC
Reverse recovery time: 206ns
Gate-source voltage: ±30V
Mechanical mounting: screw
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IXTN90N25L2 IXTN90N25L2 IXYS IXTN90N25L2.pdf Category: Transistor modules
Description: Module; single transistor; 250V; 90A; SOT227B; screw; Idm: 360A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 250V
Drain current: 90A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 36mΩ
Pulsed drain current: 360A
Power dissipation: 735W
Technology: Linear L2™
Kind of channel: enhancement
Gate charge: 640nC
Reverse recovery time: 266ns
Gate-source voltage: ±30V
Mechanical mounting: screw
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IXTN170P10P IXTN170P10P IXYS IXTN170P10P.pdf Category: Transistor modules
Description: Module; single transistor; -100V; -170A; SOT227B; screw; Idm: -510A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: -100V
Drain current: -170A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 14mΩ
Pulsed drain current: -510A
Power dissipation: 890W
Technology: PolarP™
Kind of channel: enhancement
Gate charge: 240nC
Reverse recovery time: 176ns
Gate-source voltage: ±30V
Mechanical mounting: screw
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IXTN32P60P IXTN32P60P IXYS IXTN32P60P.pdf Category: Transistor modules
Description: Module; single transistor; -600V; -32A; SOT227B; screw; Idm: -96A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: -600V
Drain current: -32A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.35Ω
Pulsed drain current: -96A
Power dissipation: 890W
Technology: PolarP™
Kind of channel: enhancement
Gate charge: 196nC
Reverse recovery time: 480ns
Gate-source voltage: ±30V
Mechanical mounting: screw
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IXTN550N055T2 IXTN550N055T2 IXYS IXTN550N055T2.pdf Category: Transistor modules
Description: Module; single transistor; 55V; 550A; SOT227B; screw; Idm: 1.65kA
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 55V
Drain current: 550A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 1.3mΩ
Pulsed drain current: 1.65kA
Power dissipation: 940W
Technology: GigaMOS™; TrenchT2™
Kind of channel: enhancement
Gate charge: 595nC
Reverse recovery time: 100ns
Gate-source voltage: ±30V
Mechanical mounting: screw
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IXTN600N04T2 IXTN600N04T2 IXYS IXTN600N04T2.pdf Category: Transistor modules
Description: Module; single transistor; 40V; 600A; SOT227B; screw; Idm: 1.8kA
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 40V
Drain current: 600A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 1.3mΩ
Pulsed drain current: 1.8kA
Power dissipation: 940W
Technology: GigaMOS™; TrenchT2™
Kind of channel: enhancement
Gate charge: 590nC
Reverse recovery time: 100ns
Gate-source voltage: ±30V
Mechanical mounting: screw
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IXTN200N10T IXTN200N10T IXYS IXTN200N10T.pdf Category: Transistor modules
Description: Module; single transistor; 100V; 200A; SOT227B; screw; Idm: 500A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 100V
Drain current: 200A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 5.5mΩ
Pulsed drain current: 500A
Power dissipation: 550W
Technology: TrenchMV™
Kind of channel: enhancement
Gate charge: 152nC
Reverse recovery time: 76ns
Gate-source voltage: ±30V
Mechanical mounting: screw
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IXTN400N15X4 IXYS littelfusediscretemosfetsnchannelultrajuncti.pdf Category: Transistor modules
Description: Module; 150V; 400A; SOT227B; 1.1kW; X4-Class; 175ns; screw
Type of semiconductor module: MOSFET transistor
Drain-source voltage: 150V
Drain current: 400A
Case: SOT227B
On-state resistance: 3.1mΩ
Power dissipation: 1.1kW
Technology: X4-Class
Reverse recovery time: 175ns
Mechanical mounting: screw
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IXTN400N20X4 IXYS ixtn400n20x4-datasheet?assetguid=e76207b4-bd40-4819-a5c2-602b37214629 Category: Transistor modules
Description: Module; 200V; 340A; SOT227B; 830W; 270ns; screw
Type of semiconductor module: MOSFET transistor
Drain-source voltage: 200V
Drain current: 340A
Case: SOT227B
On-state resistance: 3mΩ
Power dissipation: 830W
Reverse recovery time: 270ns
Mechanical mounting: screw
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IXTN5N250 IXYS DS100273AIXTN5N250.pdf Category: Transistor modules
Description: Module; 5A; SOT227B; 700W; 1.2us; screw
Type of semiconductor module: MOSFET transistor
Drain current: 5A
Case: SOT227B
Power dissipation: 700W
Reverse recovery time: 1.2µs
Mechanical mounting: screw
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IXTN8N150L IXTN8N150L IXYS IXTN8N150L.pdf Category: Transistor modules
Description: Module; single transistor; 1.5kV; 7.5A; SOT227B; screw; Idm: 20A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.5kV
Drain current: 7.5A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 3.6Ω
Pulsed drain current: 20A
Power dissipation: 545W
Technology: Linear™
Kind of channel: enhancement
Gate charge: 250nC
Reverse recovery time: 1.7µs
Gate-source voltage: ±40V
Mechanical mounting: screw
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IXTH102N15T IXYS littelfuse-discrete-mosfets-ixt-102n15t-datasheet?assetguid=239cf561-3070-4bc3-913c-311ffa82b091 Category: THT N channel transistors
Description: Transistor: N-MOSFET; 150V; 102A; 455W; TO247-3; 97ns
Type of transistor: N-MOSFET
Drain-source voltage: 150V
Drain current: 102A
Power dissipation: 455W
Case: TO247-3
Gate-source voltage: 20V
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 87nC
Kind of channel: enhancement
Reverse recovery time: 97ns
Application: automotive industry
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VUO68-16NO7 VUO68-16NO7 IXYS VUO68-16NO7.pdf Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 68A; Ifsm: 300A
Mechanical mounting: screw
Electrical mounting: THT
Max. forward impulse current: 0.3kA
Max. forward voltage: 1.5V
Version: module
Leads: wire Ø 1.5mm
Max. off-state voltage: 1.6kV
Load current: 68A
Case: ECO-PAC 1
Type of bridge rectifier: three-phase
на замовлення 96 шт:
термін постачання 14-30 дні (днів)
1+1304.24 грн
3+1145.35 грн
10+1100.98 грн
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IX4310TTR IX4310TTR IXYS littelfuse-integrated-circuits-ix4310t-datasheet?assetguid=f6c6e9cc-7c3e-472d-bad7-d563f01f2fa2 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SOT23-5; -2÷2A; Ch: 2; 5÷24V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SOT23-5
Output current: -2...2A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 5...24V
Kind of output: non-inverting
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IX4310NTR IX4310NTR IXYS Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -2÷2A; Ch: 2; 5÷24V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -2...2A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 5...24V
Kind of output: non-inverting
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DPG30C200PC-TRL IXYS DPG30C200PC.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 15Ax2; 35ns; TO263AB; Ufmax: 1.51V
Max. off-state voltage: 200V
Load current: 15A x2
Max. forward impulse current: 0.24kA
Max. forward voltage: 1.51V
Case: TO263AB
Type of diode: rectifying
Reverse recovery time: 35ns
Mounting: SMD
Power dissipation: 90W
Technology: HiPerFRED™
Features of semiconductor devices: fast switching
Kind of package: reel; tape
Semiconductor structure: common cathode; double
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DPG30C300PC-TRL IXYS DPG30C300PC.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 300V; 15Ax2; 35ns; TO263AB; Ufmax: 1.51V
Max. off-state voltage: 300V
Load current: 15A x2
Max. forward impulse current: 0.24kA
Max. forward voltage: 1.51V
Case: TO263AB
Type of diode: rectifying
Reverse recovery time: 35ns
Mounting: SMD
Power dissipation: 90W
Technology: HiPerFRED™
Features of semiconductor devices: fast switching
Kind of package: reel; tape
Semiconductor structure: common cathode; double
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MCMA85P1200TA IXYS PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 85A; Ifmax: 135A; TO240AA
Max. off-state voltage: 1.2kV
Load current: 85A
Max. forward impulse current: 1.28kA
Electrical mounting: screw
Max. forward voltage: 1.51V
Case: TO240AA
Mechanical mounting: screw
Gate current: 95/200mA
Type of semiconductor module: thyristor
Max. load current: 135A
Kind of package: bulk
Semiconductor structure: double series
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MCMA85P1600TA IXYS PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 85A; Ifmax: 135A; TO240AA
Max. off-state voltage: 1.6kV
Load current: 85A
Max. forward impulse current: 1.28kA
Electrical mounting: screw
Max. forward voltage: 1.51V
Case: TO240AA
Mechanical mounting: screw
Gate current: 95/200mA
Type of semiconductor module: thyristor
Max. load current: 135A
Kind of package: bulk
Semiconductor structure: double series
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MCMA85P1800TA IXYS Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 85A; Ifmax: 135A; TO240AA
Max. off-state voltage: 1.8kV
Load current: 85A
Max. forward impulse current: 1.28kA
Electrical mounting: screw
Max. forward voltage: 1.51V
Case: TO240AA
Mechanical mounting: screw
Gate current: 95/200mA
Type of semiconductor module: thyristor
Max. load current: 135A
Semiconductor structure: double series
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DPG20C400PC-TRL IXYS DPG20C400PC.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 10Ax2; 45ns; TO263AB; Ufmax: 1.51V
Max. off-state voltage: 0.4kV
Load current: 10A x2
Max. forward impulse current: 150A
Max. forward voltage: 1.51V
Case: TO263AB
Type of diode: rectifying
Reverse recovery time: 45ns
Mounting: SMD
Power dissipation: 65W
Technology: HiPerFRED™
Features of semiconductor devices: fast switching
Kind of package: reel; tape
Semiconductor structure: common cathode; double
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IXFH48N60X3 IXYS littelfuse-discrete-mosfets-n-channel-ultra-junction-ixfh48n60x3-datasheet?assetguid=56fbf66a-dfcb-47b6-880a-362aa913cf1a Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 600V; 48A; Idm: 68A; 520W
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Power dissipation: 520W
Case: TO247-3
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Reverse recovery time: 163ns
Pulsed drain current: 68A
Polarisation: unipolar
Drain current: 48A
Kind of channel: enhancement
Drain-source voltage: 600V
Gate-source voltage: ±20V
On-state resistance: 65mΩ
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IXGQ85N33PCD1 IXYS DS99610E%28IXG_85N33PCD1%29.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 330V; 85A; 150W; TO3P
Type of transistor: IGBT
Collector-emitter voltage: 330V
Collector current: 85A
Power dissipation: 150W
Case: TO3P
Mounting: THT
Gate charge: 80nC
Kind of package: tube
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IXTA140N055T2 IXTA140N055T2 IXYS littelfuse_discrete_mosfets_n-channel_trench_gate_ixt_140n055t2_datasheet.pdf?assetguid=886c24a8-3d1d-4378-98ef-e3645ff1ea05 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 55V; 140A; 250W; D2PAK,TO263; 40ns
Type of transistor: N-MOSFET
Drain-source voltage: 55V
Drain current: 140A
Power dissipation: 250W
Case: D2PAK; TO263
Gate-source voltage: 20V
On-state resistance: 5.4mΩ
Mounting: SMD
Gate charge: 82nC
Kind of channel: enhancement
Reverse recovery time: 40ns
Application: automotive industry
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IXTT140N075L2HV-TR IXYS Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 75V; 140A; 540W; D3PAK,TO268; 200ns
Type of transistor: N-MOSFET
Drain-source voltage: 75V
Drain current: 140A
Power dissipation: 540W
Case: D3PAK; TO268
Gate-source voltage: 20V
Mounting: SMD
Gate charge: 275nC
Reverse recovery time: 200ns
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IXFX140N25T IXFX140N25T IXYS IXFK(X)140N25T.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 140A; 960W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 140A
Power dissipation: 960W
Case: PLUS247™
On-state resistance: 17mΩ
Mounting: THT
Gate charge: 255nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
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IXTA140N12T2 IXTA140N12T2 IXYS IXTA(P)140N12T2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 140A; 577W; TO263; 65ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 140A
Power dissipation: 577W
Case: TO263
On-state resistance: 10mΩ
Mounting: SMD
Gate charge: 174nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 65ns
Features of semiconductor devices: thrench gate power mosfet
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IXTH140N075L2 IXTH140N075L2 IXYS IXTT140N075L2_HV.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 140A; 540W; TO247-3; 200ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 140A
Power dissipation: 540W
Case: TO247-3
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 275nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
Features of semiconductor devices: linear power mosfet
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IXTP140N055T2 IXTP140N055T2 IXYS IXTP140N055T2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 140A; 250W; TO220AB; 40ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 140A
Power dissipation: 250W
Case: TO220AB
On-state resistance: 5.4mΩ
Mounting: THT
Gate charge: 82nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 40ns
Features of semiconductor devices: thrench gate power mosfet
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IXTP140N12T2 IXTP140N12T2 IXYS IXTA(P)140N12T2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 140A; 577W; TO220AB; 65ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 140A
Power dissipation: 577W
Case: TO220AB
On-state resistance: 10mΩ
Mounting: THT
Gate charge: 174nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 65ns
Features of semiconductor devices: thrench gate power mosfet
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DSIK45-16AR DSIK45-16AR IXYS media?resourcetype=datasheets&itemid=d16330bf-b369-4dea-afcc-53e43f988a0d&filename=Littelfuse-Power-Semiconductors-DSIK45-16AR-Datasheet Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 45Ax2; Ifsm: 480A; ISOPLUS247™; tube
Mounting: THT
Max. forward impulse current: 0.48kA
Max. forward voltage: 1.26V
Power dissipation: 165W
Max. off-state voltage: 1.6kV
Load current: 45A x2
Kind of package: tube
Semiconductor structure: common cathode; double
Case: ISOPLUS247™
Type of diode: rectifying
на замовлення 17 шт:
термін постачання 14-30 дні (днів)
1+531.78 грн
3+314.68 грн
9+297.43 грн
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PLA160 PLA160 IXYS PLA160.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Ucntrl: 1.8÷2.8VDC; Icntrl max: 50mA
Type of relay: solid state
Mounting: THT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Control voltage: 1.8...2.8V DC
Body dimensions: 8.38x6.35x3.3mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 3.75kV
Turn-on time: 50µs
Switched voltage: max. 300V AC; max. 300V DC
Case: DIP6
Max. operating current: 50mA
Turn-off time: 50µs
Control current max.: 50mA
On-state resistance: 100Ω
на замовлення 233 шт:
термін постачання 14-30 дні (днів)
1+628.23 грн
3+436.29 грн
6+412.46 грн
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PLA160S PLA160S IXYS PLA160.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Ucntrl: 1.8÷2.8VDC; Icntrl max: 50mA
Type of relay: solid state
Mounting: SMT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Control voltage: 1.8...2.8V DC
Body dimensions: 8.38x6.35x3.3mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 3.75kV
Turn-on time: 50µs
Switched voltage: max. 300V AC; max. 300V DC
Case: DIP6
Max. operating current: 50mA
Turn-off time: 50µs
Control current max.: 50mA
On-state resistance: 100Ω
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CLA16E800PN CLA16E800PN IXYS CLA16E800PN.pdf Category: SMD/THT thyristors
Description: Thyristor: standard; 800V; Ifmax: 16A; 10A; Igt: 50mA; TO220FP; THT
Mounting: THT
Max. forward impulse current: 195A
Gate current: 50mA
Max. off-state voltage: 0.8kV
Load current: 10A
Max. load current: 16A
Kind of package: tube
Case: TO220FP
Type of thyristor: standard
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PLA160STR IXYS PLA160.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Ucntrl: 1.8÷2.8VDC; Icntrl max: 50mA
Type of relay: solid state
Mounting: SMT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Control voltage: 1.8...2.8V DC
Body dimensions: 8.38x6.35x3.3mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 3.75kV
Turn-on time: 50µs
Switched voltage: max. 300V AC; max. 300V DC
Case: DIP6
Max. operating current: 50mA
Turn-off time: 50µs
Control current max.: 50mA
On-state resistance: 100Ω
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 Мінімальне замовлення: 1000 шт
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IXDN614PI IXDN614PI IXYS IXDD614CI-DTE.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -14÷14A; Ch: 1; 4.5÷35V
Mounting: THT
Supply voltage: 4.5...35V
Output current: -14...14A
Type of integrated circuit: driver
Kind of output: non-inverting
Operating temperature: -40...125°C
Turn-on time: 140ns
Kind of package: tube
Case: DIP8
Turn-off time: 130ns
Kind of integrated circuit: gate driver; low-side
Number of channels: 1
на замовлення 10 шт:
термін постачання 14-30 дні (днів)
2+252.18 грн
9+115.03 грн
Мінімальне замовлення: 2 шт
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IXTN22N100L IXTN22N100L.pdf
IXTN22N100L
Виробник: IXYS
Category: Transistor modules
Description: Module; single transistor; 1kV; 22A; SOT227B; screw; Idm: 50A; 700W
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1kV
Drain current: 22A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.6Ω
Pulsed drain current: 50A
Power dissipation: 700W
Technology: Linear™
Kind of channel: enhancement
Gate charge: 0.27µC
Reverse recovery time: 1µs
Gate-source voltage: ±40V
Mechanical mounting: screw
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IXTN62N50L IXTN62N50L.pdf
IXTN62N50L
Виробник: IXYS
Category: Transistor modules
Description: Module; single transistor; 500V; 62A; SOT227B; screw; Idm: 150A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 500V
Drain current: 62A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.1Ω
Pulsed drain current: 150A
Power dissipation: 800W
Technology: Linear™
Kind of channel: enhancement
Gate charge: 550nC
Reverse recovery time: 0.5µs
Gate-source voltage: ±40V
Mechanical mounting: screw
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IXTN200N10L2 IXTN200N10L2.pdf
IXTN200N10L2
Виробник: IXYS
Category: Transistor modules
Description: Module; single transistor; 100V; 178A; SOT227B; screw; Idm: 500A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 100V
Drain current: 178A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 11mΩ
Pulsed drain current: 500A
Power dissipation: 830W
Technology: Linear L2™
Kind of channel: enhancement
Gate charge: 540nC
Reverse recovery time: 245ns
Gate-source voltage: ±30V
Mechanical mounting: screw
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IXTN17N120L IXTN17N120L.pdf
IXTN17N120L
Виробник: IXYS
Category: Transistor modules
Description: Module; single transistor; 1.2kV; 15A; SOT227B; screw; Idm: 34A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.2kV
Drain current: 15A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.9Ω
Pulsed drain current: 34A
Power dissipation: 540W
Technology: Linear™
Kind of channel: enhancement
Gate charge: 155nC
Reverse recovery time: 1.83µs
Gate-source voltage: ±40V
Mechanical mounting: screw
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IXTN40P50P IXTN40P50P.pdf
IXTN40P50P
Виробник: IXYS
Category: Transistor modules
Description: Module; single transistor; -500V; -40A; SOT227B; screw; Idm: -120A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: -500V
Drain current: -40A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.23Ω
Pulsed drain current: -120A
Power dissipation: 890W
Technology: PolarP™
Kind of channel: enhancement
Gate charge: 205nC
Reverse recovery time: 477ns
Gate-source voltage: ±30V
Mechanical mounting: screw
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IXTN240N075L2 IXTN240N075L2.pdf
IXTN240N075L2
Виробник: IXYS
Category: Transistor modules
Description: Module; single transistor; 75V; 225A; SOT227B; screw; Idm: 720A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 75V
Drain current: 225A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 7mΩ
Pulsed drain current: 720A
Power dissipation: 735W
Technology: Linear L2™
Kind of channel: enhancement
Gate charge: 546nC
Reverse recovery time: 206ns
Gate-source voltage: ±30V
Mechanical mounting: screw
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IXTN90N25L2 IXTN90N25L2.pdf
IXTN90N25L2
Виробник: IXYS
Category: Transistor modules
Description: Module; single transistor; 250V; 90A; SOT227B; screw; Idm: 360A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 250V
Drain current: 90A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 36mΩ
Pulsed drain current: 360A
Power dissipation: 735W
Technology: Linear L2™
Kind of channel: enhancement
Gate charge: 640nC
Reverse recovery time: 266ns
Gate-source voltage: ±30V
Mechanical mounting: screw
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IXTN170P10P IXTN170P10P.pdf
IXTN170P10P
Виробник: IXYS
Category: Transistor modules
Description: Module; single transistor; -100V; -170A; SOT227B; screw; Idm: -510A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: -100V
Drain current: -170A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 14mΩ
Pulsed drain current: -510A
Power dissipation: 890W
Technology: PolarP™
Kind of channel: enhancement
Gate charge: 240nC
Reverse recovery time: 176ns
Gate-source voltage: ±30V
Mechanical mounting: screw
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Мінімальне замовлення: 300 шт
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IXTN32P60P IXTN32P60P.pdf
IXTN32P60P
Виробник: IXYS
Category: Transistor modules
Description: Module; single transistor; -600V; -32A; SOT227B; screw; Idm: -96A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: -600V
Drain current: -32A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.35Ω
Pulsed drain current: -96A
Power dissipation: 890W
Technology: PolarP™
Kind of channel: enhancement
Gate charge: 196nC
Reverse recovery time: 480ns
Gate-source voltage: ±30V
Mechanical mounting: screw
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IXTN550N055T2 IXTN550N055T2.pdf
IXTN550N055T2
Виробник: IXYS
Category: Transistor modules
Description: Module; single transistor; 55V; 550A; SOT227B; screw; Idm: 1.65kA
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 55V
Drain current: 550A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 1.3mΩ
Pulsed drain current: 1.65kA
Power dissipation: 940W
Technology: GigaMOS™; TrenchT2™
Kind of channel: enhancement
Gate charge: 595nC
Reverse recovery time: 100ns
Gate-source voltage: ±30V
Mechanical mounting: screw
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IXTN600N04T2 IXTN600N04T2.pdf
IXTN600N04T2
Виробник: IXYS
Category: Transistor modules
Description: Module; single transistor; 40V; 600A; SOT227B; screw; Idm: 1.8kA
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 40V
Drain current: 600A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 1.3mΩ
Pulsed drain current: 1.8kA
Power dissipation: 940W
Technology: GigaMOS™; TrenchT2™
Kind of channel: enhancement
Gate charge: 590nC
Reverse recovery time: 100ns
Gate-source voltage: ±30V
Mechanical mounting: screw
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IXTN200N10T IXTN200N10T.pdf
IXTN200N10T
Виробник: IXYS
Category: Transistor modules
Description: Module; single transistor; 100V; 200A; SOT227B; screw; Idm: 500A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 100V
Drain current: 200A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 5.5mΩ
Pulsed drain current: 500A
Power dissipation: 550W
Technology: TrenchMV™
Kind of channel: enhancement
Gate charge: 152nC
Reverse recovery time: 76ns
Gate-source voltage: ±30V
Mechanical mounting: screw
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IXTN400N15X4 littelfusediscretemosfetsnchannelultrajuncti.pdf
Виробник: IXYS
Category: Transistor modules
Description: Module; 150V; 400A; SOT227B; 1.1kW; X4-Class; 175ns; screw
Type of semiconductor module: MOSFET transistor
Drain-source voltage: 150V
Drain current: 400A
Case: SOT227B
On-state resistance: 3.1mΩ
Power dissipation: 1.1kW
Technology: X4-Class
Reverse recovery time: 175ns
Mechanical mounting: screw
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Мінімальне замовлення: 300 шт
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IXTN400N20X4 ixtn400n20x4-datasheet?assetguid=e76207b4-bd40-4819-a5c2-602b37214629
Виробник: IXYS
Category: Transistor modules
Description: Module; 200V; 340A; SOT227B; 830W; 270ns; screw
Type of semiconductor module: MOSFET transistor
Drain-source voltage: 200V
Drain current: 340A
Case: SOT227B
On-state resistance: 3mΩ
Power dissipation: 830W
Reverse recovery time: 270ns
Mechanical mounting: screw
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Мінімальне замовлення: 300 шт
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IXTN5N250 DS100273AIXTN5N250.pdf
Виробник: IXYS
Category: Transistor modules
Description: Module; 5A; SOT227B; 700W; 1.2us; screw
Type of semiconductor module: MOSFET transistor
Drain current: 5A
Case: SOT227B
Power dissipation: 700W
Reverse recovery time: 1.2µs
Mechanical mounting: screw
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Мінімальне замовлення: 300 шт
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IXTN8N150L IXTN8N150L.pdf
IXTN8N150L
Виробник: IXYS
Category: Transistor modules
Description: Module; single transistor; 1.5kV; 7.5A; SOT227B; screw; Idm: 20A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.5kV
Drain current: 7.5A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 3.6Ω
Pulsed drain current: 20A
Power dissipation: 545W
Technology: Linear™
Kind of channel: enhancement
Gate charge: 250nC
Reverse recovery time: 1.7µs
Gate-source voltage: ±40V
Mechanical mounting: screw
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Мінімальне замовлення: 300 шт
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IXTH102N15T littelfuse-discrete-mosfets-ixt-102n15t-datasheet?assetguid=239cf561-3070-4bc3-913c-311ffa82b091
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; 150V; 102A; 455W; TO247-3; 97ns
Type of transistor: N-MOSFET
Drain-source voltage: 150V
Drain current: 102A
Power dissipation: 455W
Case: TO247-3
Gate-source voltage: 20V
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 87nC
Kind of channel: enhancement
Reverse recovery time: 97ns
Application: automotive industry
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Мінімальне замовлення: 300 шт
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VUO68-16NO7 VUO68-16NO7.pdf
VUO68-16NO7
Виробник: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 68A; Ifsm: 300A
Mechanical mounting: screw
Electrical mounting: THT
Max. forward impulse current: 0.3kA
Max. forward voltage: 1.5V
Version: module
Leads: wire Ø 1.5mm
Max. off-state voltage: 1.6kV
Load current: 68A
Case: ECO-PAC 1
Type of bridge rectifier: three-phase
на замовлення 96 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+1304.24 грн
3+1145.35 грн
10+1100.98 грн
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IX4310TTR littelfuse-integrated-circuits-ix4310t-datasheet?assetguid=f6c6e9cc-7c3e-472d-bad7-d563f01f2fa2
IX4310TTR
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SOT23-5; -2÷2A; Ch: 2; 5÷24V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SOT23-5
Output current: -2...2A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 5...24V
Kind of output: non-inverting
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Мінімальне замовлення: 3000 шт
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IX4310NTR
IX4310NTR
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -2÷2A; Ch: 2; 5÷24V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -2...2A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 5...24V
Kind of output: non-inverting
товару немає в наявності
Мінімальне замовлення: 4000 шт
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DPG30C200PC-TRL DPG30C200PC.pdf
Виробник: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 15Ax2; 35ns; TO263AB; Ufmax: 1.51V
Max. off-state voltage: 200V
Load current: 15A x2
Max. forward impulse current: 0.24kA
Max. forward voltage: 1.51V
Case: TO263AB
Type of diode: rectifying
Reverse recovery time: 35ns
Mounting: SMD
Power dissipation: 90W
Technology: HiPerFRED™
Features of semiconductor devices: fast switching
Kind of package: reel; tape
Semiconductor structure: common cathode; double
товару немає в наявності
Мінімальне замовлення: 800 шт
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DPG30C300PC-TRL DPG30C300PC.pdf
Виробник: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 300V; 15Ax2; 35ns; TO263AB; Ufmax: 1.51V
Max. off-state voltage: 300V
Load current: 15A x2
Max. forward impulse current: 0.24kA
Max. forward voltage: 1.51V
Case: TO263AB
Type of diode: rectifying
Reverse recovery time: 35ns
Mounting: SMD
Power dissipation: 90W
Technology: HiPerFRED™
Features of semiconductor devices: fast switching
Kind of package: reel; tape
Semiconductor structure: common cathode; double
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Мінімальне замовлення: 800 шт
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MCMA85P1200TA PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 85A; Ifmax: 135A; TO240AA
Max. off-state voltage: 1.2kV
Load current: 85A
Max. forward impulse current: 1.28kA
Electrical mounting: screw
Max. forward voltage: 1.51V
Case: TO240AA
Mechanical mounting: screw
Gate current: 95/200mA
Type of semiconductor module: thyristor
Max. load current: 135A
Kind of package: bulk
Semiconductor structure: double series
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MCMA85P1600TA PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 85A; Ifmax: 135A; TO240AA
Max. off-state voltage: 1.6kV
Load current: 85A
Max. forward impulse current: 1.28kA
Electrical mounting: screw
Max. forward voltage: 1.51V
Case: TO240AA
Mechanical mounting: screw
Gate current: 95/200mA
Type of semiconductor module: thyristor
Max. load current: 135A
Kind of package: bulk
Semiconductor structure: double series
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MCMA85P1800TA
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 85A; Ifmax: 135A; TO240AA
Max. off-state voltage: 1.8kV
Load current: 85A
Max. forward impulse current: 1.28kA
Electrical mounting: screw
Max. forward voltage: 1.51V
Case: TO240AA
Mechanical mounting: screw
Gate current: 95/200mA
Type of semiconductor module: thyristor
Max. load current: 135A
Semiconductor structure: double series
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Мінімальне замовлення: 36 шт
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DPG20C400PC-TRL DPG20C400PC.pdf
Виробник: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 10Ax2; 45ns; TO263AB; Ufmax: 1.51V
Max. off-state voltage: 0.4kV
Load current: 10A x2
Max. forward impulse current: 150A
Max. forward voltage: 1.51V
Case: TO263AB
Type of diode: rectifying
Reverse recovery time: 45ns
Mounting: SMD
Power dissipation: 65W
Technology: HiPerFRED™
Features of semiconductor devices: fast switching
Kind of package: reel; tape
Semiconductor structure: common cathode; double
товару немає в наявності
Мінімальне замовлення: 800 шт
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IXFH48N60X3 littelfuse-discrete-mosfets-n-channel-ultra-junction-ixfh48n60x3-datasheet?assetguid=56fbf66a-dfcb-47b6-880a-362aa913cf1a
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 600V; 48A; Idm: 68A; 520W
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Power dissipation: 520W
Case: TO247-3
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Reverse recovery time: 163ns
Pulsed drain current: 68A
Polarisation: unipolar
Drain current: 48A
Kind of channel: enhancement
Drain-source voltage: 600V
Gate-source voltage: ±20V
On-state resistance: 65mΩ
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IXGQ85N33PCD1 DS99610E%28IXG_85N33PCD1%29.pdf
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 330V; 85A; 150W; TO3P
Type of transistor: IGBT
Collector-emitter voltage: 330V
Collector current: 85A
Power dissipation: 150W
Case: TO3P
Mounting: THT
Gate charge: 80nC
Kind of package: tube
товару немає в наявності
Мінімальне замовлення: 300 шт
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IXTA140N055T2 littelfuse_discrete_mosfets_n-channel_trench_gate_ixt_140n055t2_datasheet.pdf?assetguid=886c24a8-3d1d-4378-98ef-e3645ff1ea05
IXTA140N055T2
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 55V; 140A; 250W; D2PAK,TO263; 40ns
Type of transistor: N-MOSFET
Drain-source voltage: 55V
Drain current: 140A
Power dissipation: 250W
Case: D2PAK; TO263
Gate-source voltage: 20V
On-state resistance: 5.4mΩ
Mounting: SMD
Gate charge: 82nC
Kind of channel: enhancement
Reverse recovery time: 40ns
Application: automotive industry
товару немає в наявності
Мінімальне замовлення: 300 шт
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IXTT140N075L2HV-TR
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 75V; 140A; 540W; D3PAK,TO268; 200ns
Type of transistor: N-MOSFET
Drain-source voltage: 75V
Drain current: 140A
Power dissipation: 540W
Case: D3PAK; TO268
Gate-source voltage: 20V
Mounting: SMD
Gate charge: 275nC
Reverse recovery time: 200ns
товару немає в наявності
Мінімальне замовлення: 400 шт
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IXFX140N25T IXFK(X)140N25T.pdf
IXFX140N25T
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 140A; 960W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 140A
Power dissipation: 960W
Case: PLUS247™
On-state resistance: 17mΩ
Mounting: THT
Gate charge: 255nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
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IXTA140N12T2 IXTA(P)140N12T2.pdf
IXTA140N12T2
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 140A; 577W; TO263; 65ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 140A
Power dissipation: 577W
Case: TO263
On-state resistance: 10mΩ
Mounting: SMD
Gate charge: 174nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 65ns
Features of semiconductor devices: thrench gate power mosfet
товару немає в наявності
Мінімальне замовлення: 300 шт
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IXTH140N075L2 IXTT140N075L2_HV.pdf
IXTH140N075L2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 140A; 540W; TO247-3; 200ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 140A
Power dissipation: 540W
Case: TO247-3
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 275nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
Features of semiconductor devices: linear power mosfet
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IXTP140N055T2 IXTP140N055T2.pdf
IXTP140N055T2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 140A; 250W; TO220AB; 40ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 140A
Power dissipation: 250W
Case: TO220AB
On-state resistance: 5.4mΩ
Mounting: THT
Gate charge: 82nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 40ns
Features of semiconductor devices: thrench gate power mosfet
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IXTP140N12T2 IXTA(P)140N12T2.pdf
IXTP140N12T2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 140A; 577W; TO220AB; 65ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 140A
Power dissipation: 577W
Case: TO220AB
On-state resistance: 10mΩ
Mounting: THT
Gate charge: 174nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 65ns
Features of semiconductor devices: thrench gate power mosfet
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DSIK45-16AR media?resourcetype=datasheets&itemid=d16330bf-b369-4dea-afcc-53e43f988a0d&filename=Littelfuse-Power-Semiconductors-DSIK45-16AR-Datasheet
DSIK45-16AR
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 45Ax2; Ifsm: 480A; ISOPLUS247™; tube
Mounting: THT
Max. forward impulse current: 0.48kA
Max. forward voltage: 1.26V
Power dissipation: 165W
Max. off-state voltage: 1.6kV
Load current: 45A x2
Kind of package: tube
Semiconductor structure: common cathode; double
Case: ISOPLUS247™
Type of diode: rectifying
на замовлення 17 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+531.78 грн
3+314.68 грн
9+297.43 грн
В кошику  од. на суму  грн.
PLA160 PLA160.pdf
PLA160
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Ucntrl: 1.8÷2.8VDC; Icntrl max: 50mA
Type of relay: solid state
Mounting: THT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Control voltage: 1.8...2.8V DC
Body dimensions: 8.38x6.35x3.3mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 3.75kV
Turn-on time: 50µs
Switched voltage: max. 300V AC; max. 300V DC
Case: DIP6
Max. operating current: 50mA
Turn-off time: 50µs
Control current max.: 50mA
On-state resistance: 100Ω
на замовлення 233 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+628.23 грн
3+436.29 грн
6+412.46 грн
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PLA160S PLA160.pdf
PLA160S
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Ucntrl: 1.8÷2.8VDC; Icntrl max: 50mA
Type of relay: solid state
Mounting: SMT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Control voltage: 1.8...2.8V DC
Body dimensions: 8.38x6.35x3.3mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 3.75kV
Turn-on time: 50µs
Switched voltage: max. 300V AC; max. 300V DC
Case: DIP6
Max. operating current: 50mA
Turn-off time: 50µs
Control current max.: 50mA
On-state resistance: 100Ω
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CLA16E800PN CLA16E800PN.pdf
CLA16E800PN
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor: standard; 800V; Ifmax: 16A; 10A; Igt: 50mA; TO220FP; THT
Mounting: THT
Max. forward impulse current: 195A
Gate current: 50mA
Max. off-state voltage: 0.8kV
Load current: 10A
Max. load current: 16A
Kind of package: tube
Case: TO220FP
Type of thyristor: standard
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PLA160STR PLA160.pdf
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Ucntrl: 1.8÷2.8VDC; Icntrl max: 50mA
Type of relay: solid state
Mounting: SMT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Control voltage: 1.8...2.8V DC
Body dimensions: 8.38x6.35x3.3mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 3.75kV
Turn-on time: 50µs
Switched voltage: max. 300V AC; max. 300V DC
Case: DIP6
Max. operating current: 50mA
Turn-off time: 50µs
Control current max.: 50mA
On-state resistance: 100Ω
товару немає в наявності
Мінімальне замовлення: 1000 шт
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IXDN614PI IXDD614CI-DTE.pdf
IXDN614PI
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -14÷14A; Ch: 1; 4.5÷35V
Mounting: THT
Supply voltage: 4.5...35V
Output current: -14...14A
Type of integrated circuit: driver
Kind of output: non-inverting
Operating temperature: -40...125°C
Turn-on time: 140ns
Kind of package: tube
Case: DIP8
Turn-off time: 130ns
Kind of integrated circuit: gate driver; low-side
Number of channels: 1
на замовлення 10 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
2+252.18 грн
9+115.03 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.