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MKI75-06A7 IXYS Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge,NTC thermistor
Collector current: 60A
Power dissipation: 280W
Case: E2-Pack
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Max. off-state voltage: 0.6kV
Technology: NPT
Application: for UPS; motors
Topology: H-bridge; NTC thermistor
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
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IXFK520N075T2 IXFK520N075T2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D4BAAC72B01820&compId=IXFK(X)520N075T2.pdf?ci_sign=c82dec6155d9cee277baecf17a89f241b95daf23 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 520A; 1250W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 520A
Power dissipation: 1.25kW
Case: TO264
On-state resistance: 2.2mΩ
Mounting: THT
Gate charge: 545nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
на замовлення 296 шт:
термін постачання 21-30 дні (днів)
1+881.50 грн
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IXFX520N075T2 IXFX520N075T2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D4BAAC72B01820&compId=IXFK(X)520N075T2.pdf?ci_sign=c82dec6155d9cee277baecf17a89f241b95daf23 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 520A; 1250W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 520A
Power dissipation: 1.25kW
Case: PLUS247™
On-state resistance: 2.2mΩ
Mounting: THT
Gate charge: 545nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
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DPG10P400PJ DPG10P400PJ IXYS DPG10P400PJ.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 10A; tube; Ifsm: 130A; ISOPLUS220™
Mounting: THT
Semiconductor structure: double series
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Case: ISOPLUS220™
Type of diode: rectifying
Kind of package: tube
Reverse recovery time: 45ns
Max. forward voltage: 1.28V
Load current: 10A
Power dissipation: 60W
Max. forward impulse current: 130A
Max. off-state voltage: 0.4kV
на замовлення 18 шт:
термін постачання 21-30 дні (днів)
2+402.18 грн
3+335.62 грн
10+296.99 грн
Мінімальне замовлення: 2
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DPG10I400PA DPG10I400PA IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98AD4F952FFE2B8BF&compId=DPG10I400PA.pdf?ci_sign=a1fffe2dd22dde2d2743b8bda8be89ffa1ad3840 Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 10A; tube; Ifsm: 150A; TO220AC; 65W
Mounting: THT
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Case: TO220AC
Type of diode: rectifying
Kind of package: tube
Reverse recovery time: 45ns
Max. forward voltage: 1.03V
Load current: 10A
Power dissipation: 65W
Max. forward impulse current: 150A
Max. off-state voltage: 0.4kV
на замовлення 83 шт:
термін постачання 21-30 дні (днів)
4+101.41 грн
10+86.92 грн
50+81.29 грн
Мінімальне замовлення: 4
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DPG10I200PM DPG10I200PM IXYS DPG10I200PM.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10A; tube; Ifsm: 140A; TO220FP-2; 35W
Mounting: THT
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Case: TO220FP-2
Type of diode: rectifying
Kind of package: tube
Reverse recovery time: 35ns
Max. forward voltage: 1.27V
Load current: 10A
Power dissipation: 35W
Max. forward impulse current: 140A
Max. off-state voltage: 200V
на замовлення 56 шт:
термін постачання 21-30 дні (днів)
4+125.68 грн
50+62.78 грн
Мінімальне замовлення: 4
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DPG10I400PM DPG10I400PM IXYS DPG10I400PM.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 10A; tube; Ifsm: 150A; TO220FP-2; 35W
Mounting: THT
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Case: TO220FP-2
Type of diode: rectifying
Kind of package: tube
Reverse recovery time: 45ns
Max. forward voltage: 1.32V
Load current: 10A
Power dissipation: 35W
Max. forward impulse current: 150A
Max. off-state voltage: 0.4kV
на замовлення 43 шт:
термін постачання 21-30 дні (днів)
3+200.22 грн
Мінімальне замовлення: 3
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DPG10I200PA DPG10I200PA IXYS media?resourcetype=datasheets&itemid=EC448438-07B9-4C8C-BA5D-4A6822B3E045&filename=Littelfuse-Power-Semiconductors-DPG10I200PA-Datasheet Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10A; tube; Ifsm: 140A; TO220AC; 65W
Mounting: THT
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Case: TO220AC
Type of diode: rectifying
Kind of package: tube
Reverse recovery time: 35ns
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 1.27V
Load current: 10A
Power dissipation: 65W
Max. forward impulse current: 140A
Max. off-state voltage: 200V
на замовлення 190 шт:
термін постачання 21-30 дні (днів)
4+115.28 грн
10+91.75 грн
50+79.68 грн
100+74.05 грн
Мінімальне замовлення: 4
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IXDN614YI IXDN614YI IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A5D71347C948CA50&compId=IXDD614CI-DTE.pdf?ci_sign=56f1c241270a7cf5231e597905eedca728d0721d Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO263-5
Output current: -14...14A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 140ns
Turn-off time: 130ns
на замовлення 168 шт:
термін постачання 21-30 дні (днів)
2+337.17 грн
10+243.87 грн
Мінімальне замовлення: 2
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IXDN614SITR IXYS littelfuse-integrated-circuits-ixd-614-datasheet?assetguid=e66ef830-2f72-45bc-86ab-607383f42514 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -14...14A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 140ns
Turn-off time: 130ns
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IXGT25N160 IXGT25N160 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAE2D104B897820&compId=IXGH(T)25N160.pdf?ci_sign=cb53774ff2fd2307076286b94f4d40db8e75e75f Category: SMD IGBT transistors
Description: Transistor: IGBT; NPT; 1.6kV; 25A; 300W; TO268
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.6kV
Collector current: 25A
Power dissipation: 300W
Case: TO268
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: SMD
Gate charge: 84nC
Kind of package: tube
Turn-on time: 283ns
Turn-off time: 526ns
Features of semiconductor devices: high voltage
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IXSH80N120L2KHV IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1FD099C55B7758D1E0E1&compId=IXSH80N120L2KHV.pdf?ci_sign=be010a8c633b27bff592167438e90ea2234da827 Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 58A; Idm: 198A; 395W
Mounting: THT
Case: TO247-4
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Technology: SiC
Gate-source voltage: -10...23V
Gate charge: 135nC
On-state resistance: 58mΩ
Drain current: 58A
Power dissipation: 395W
Drain-source voltage: 1.2kV
Pulsed drain current: 198A
Polarisation: unipolar
Kind of channel: enhancement
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IXFN340N07 IXFN340N07 IXYS pVersion=0046&contRep=ZT&docId=E2920386B7F856F19A99005056AB752F&compId=98547.pdf?ci_sign=105d98d49cea6a7db7877e066e9a5c3dc470e269 Category: Transistor modules MOSFET
Description: Module; single transistor; 70V; 340A; SOT227B; screw; Idm: 1.36kA
Polarisation: unipolar
Drain-source voltage: 70V
Drain current: 340A
Pulsed drain current: 1.36kA
Power dissipation: 700W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 4mΩ
Gate charge: 0.49µC
Kind of channel: enhancement
Electrical mounting: screw
Mechanical mounting: screw
Reverse recovery time: 200ns
Technology: HiPerFET™
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
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IXFT340N075T2 IXFT340N075T2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CBFB39DDD91820&compId=IXFH(T)340N075T2.pdf?ci_sign=dac52e37406d8c3466ad703fb0fc38b3c9cc04d1 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 340A; 935W; TO268; 75ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 340A
Power dissipation: 935W
Case: TO268
On-state resistance: 3.2mΩ
Mounting: SMD
Gate charge: 300nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 75ns
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IXFH340N075T2 IXFH340N075T2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CBFB39DDD91820&compId=IXFH(T)340N075T2.pdf?ci_sign=dac52e37406d8c3466ad703fb0fc38b3c9cc04d1 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 340A; 935W; TO247-3; 75ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 340A
Power dissipation: 935W
Case: TO247-3
On-state resistance: 3.2mΩ
Mounting: THT
Gate charge: 300nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 75ns
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IXTH340N04T4 IXTH340N04T4 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CC012C20DD1820&compId=IXTH(P)340N04T4.pdf?ci_sign=6728356b6a9ab93c60578b097a3e695f5f987fdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 340A; 480W; TO247-3; 43ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 340A
Power dissipation: 480W
Case: TO247-3
On-state resistance: 1.9mΩ
Mounting: THT
Gate charge: 256nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 43ns
Features of semiconductor devices: thrench gate power mosfet
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IXTA340N04T4 IXTA340N04T4 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CC072A5B69F820&compId=IXTA340N04T4.pdf?ci_sign=a246af44e28256228f00eb022d2de3e39723ed2f Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 340A; 480W; TO263; 43ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 340A
Power dissipation: 480W
Case: TO263
On-state resistance: 1.7mΩ
Mounting: SMD
Gate charge: 256nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 43ns
Features of semiconductor devices: thrench gate power mosfet
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IXTA340N04T4-7 IXTA340N04T4-7 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CC072A5B69F820&compId=IXTA340N04T4.pdf?ci_sign=a246af44e28256228f00eb022d2de3e39723ed2f Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 340A; 480W; TO263-7; 43ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 340A
Power dissipation: 480W
Case: TO263-7
On-state resistance: 1.7mΩ
Mounting: SMD
Gate charge: 256nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 43ns
Features of semiconductor devices: thrench gate power mosfet
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IXTP340N04T4 IXTP340N04T4 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CC012C20DD1820&compId=IXTH(P)340N04T4.pdf?ci_sign=6728356b6a9ab93c60578b097a3e695f5f987fdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 340A; 480W; TO220AB; 43ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 340A
Power dissipation: 480W
Case: TO220AB
On-state resistance: 1.9mΩ
Mounting: THT
Gate charge: 256nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 43ns
Features of semiconductor devices: thrench gate power mosfet
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MMIX1X340N65B4 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAA78862F0E7820&compId=MMIX1X340N65B4.pdf?ci_sign=d2491b7f4fdece1fa3ddaa0a18602d4894132816 Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 650V; 295A; 1.2kW; SMPD
Type of transistor: IGBT
Power dissipation: 1.2kW
Case: SMPD
Mounting: SMD
Gate charge: 553nC
Kind of package: tube
Turn-on time: 119ns
Turn-off time: 346ns
Gate-emitter voltage: ±20V
Collector current: 295A
Collector-emitter voltage: 650V
Pulsed collector current: 1.2kA
Technology: BiMOSFET™; GenX3™; XPT™
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IXFH320N10T2 IXFH320N10T2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A2856F4A8DDE7820&compId=IXFH(T)320N10T2.pdf?ci_sign=712ea63a2238f63f81d01689168cb986a264e110 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 320A; 1000W; TO247-3; 98ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 320A
Power dissipation: 1kW
Case: TO247-3
On-state resistance: 3.5mΩ
Mounting: THT
Gate charge: 430nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 98ns
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IXFT320N10T2 IXFT320N10T2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A2856F4A8DDE7820&compId=IXFH(T)320N10T2.pdf?ci_sign=712ea63a2238f63f81d01689168cb986a264e110 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9618AC669820&compId=IXFT320N10T2.pdf?ci_sign=01df806445c3914f7627f006ec4695a8a5f161d0 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 320A; 1000W; TO268; 98ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 320A
Power dissipation: 1kW
Case: TO268
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 430nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 98ns
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MIXA225PF1200TSF IXYS MIXA225PF1200TSF.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 250A
Topology: IGBT half-bridge; NTC thermistor
Electrical mounting: Press-in PCB
Application: fans; for pump; for UPS; motors
Semiconductor structure: transistor/transistor
Mechanical mounting: screw
Type of semiconductor module: IGBT
Case: SimBus F
Technology: Sonic FRD™; XPT™
Gate-emitter voltage: ±20V
Collector current: 250A
Pulsed collector current: 500A
Power dissipation: 1.1kW
Max. off-state voltage: 1.2kV
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MIXA225RF1200TSF IXYS MIXA225RF1200TSF.pdf Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper,NTC thermistor
Topology: boost chopper; NTC thermistor
Electrical mounting: Press-in PCB
Semiconductor structure: diode/transistor
Mechanical mounting: screw
Type of semiconductor module: IGBT
Case: SimBus F
Technology: Sonic FRD™; XPT™
Gate-emitter voltage: ±20V
Collector current: 250A
Pulsed collector current: 500A
Power dissipation: 1.1kW
Max. off-state voltage: 1.2kV
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DCG45X1200NA DCG45X1200NA IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA99594E6C1A940C7&compId=DCG45X1200NA.pdf?ci_sign=1c51b557c6e26ea3de51342637ecca197c93d6b6 Category: Diode modules
Description: Module: diode; double independent; 1.2kV; 22Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 1.2kV
Load current: 22A x2
Case: SOT227B
Max. forward voltage: 2.2V
Electrical mounting: screw
Mechanical mounting: screw
Features of semiconductor devices: Schottky
Technology: SiC
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MG1750S-BN4MM IXYS media?resourcetype=datasheets&itemid=974f4440-f0a9-4745-b140-b9e5ed96929a&filename=littelfuse_power_semiconductor_igbt_module_mg1750s_bn4mm_datasheet.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 50A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.7kV
Collector current: 50A
Case: Y4-M5
Electrical mounting: FASTON connectors; screw
Technology: Field Stop; Trench
Mechanical mounting: screw
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MG12150S-BN2MM IXYS littelfuse_power_semiconductor_igbt_module_mg12150s_bn2mm_datasheet.pdf.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 150A
Case: Y4-M5
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Technology: Field Stop; Trench
Mechanical mounting: screw
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MG12200D-BN2MM IXYS Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 200A
Case: Y3-DCB
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 400A
Technology: Field Stop; Trench
Mechanical mounting: screw
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MG17100S-BN4MM IXYS Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.7kV
Collector current: 100A
Case: Y4-M5
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: Field Stop; Trench
Mechanical mounting: screw
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MG1775S-BN4MM IXYS littelfuse_power_semiconductor_igbt_module_mg1775s_bn4mm_datasheet.pdf?assetguid=fc472a27-3dbe-4c5b-b40e-11b48e024b3d Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 75A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.7kV
Collector current: 75A
Case: Y4-M5
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Technology: Field Stop; Trench
Mechanical mounting: screw
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MG12100S-BN2MM IXYS media?resourcetype=datasheets&itemid=e4f80881-79d4-48fd-9161-54b8568e400c&filename=littelfuse_power_semiconductor_igbt_module_mg12100s_bn2mm_datasheet.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 100A
Case: package S
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: Field Stop; Trench
Mechanical mounting: screw
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IXTP230N04T4 IXTP230N04T4 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CD107B235FB820&compId=IXTA(P)230N04T4.pdf?ci_sign=3a6bf224573bba64588433477b6903b439191066 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 230A; 340W; TO220AB; 32ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 230A
Power dissipation: 340W
Case: TO220AB
On-state resistance: 2.9mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 32ns
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IXFH12N80P IXFH12N80P IXYS IXFH12N80P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 12A; 360W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 12A
Power dissipation: 360W
Case: TO247-3
On-state resistance: 0.85Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 51nC
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IXTA230N04T4 IXTA230N04T4 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CD107B235FB820&compId=IXTA(P)230N04T4.pdf?ci_sign=3a6bf224573bba64588433477b6903b439191066 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 230A; 340W; TO263; 32ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 230A
Power dissipation: 340W
Case: TO263
On-state resistance: 2.9mΩ
Mounting: SMD
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 32ns
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DSEP29-06A DSEP29-06A IXYS pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BA82786FD2576143&compId=DSEP29-06A.pdf?ci_sign=82b5f05dc3fbb9ce8d39aa34aa78df78ee791b35 Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 250A; TO220AC; 165W
Case: TO220AC
Mounting: THT
Kind of package: tube
Type of diode: rectifying
Reverse recovery time: 35ns
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 1.26V
Power dissipation: 165W
Load current: 30A
Max. forward impulse current: 250A
Max. off-state voltage: 0.6kV
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Technology: HiPerFRED™
на замовлення 257 шт:
термін постачання 21-30 дні (днів)
2+309.44 грн
10+173.85 грн
Мінімальне замовлення: 2
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DSEP29-06B DSEP29-06B IXYS Littelfuse-Power-Semiconductors-DSEP29-06B-Datasheet?assetguid=ee90203e-7c1e-47ff-b7dc-ff230a0cf920 Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 250A; TO220AC; 165W
Case: TO220AC
Mounting: THT
Kind of package: tube
Type of diode: rectifying
Reverse recovery time: 25ns
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 2.52V
Power dissipation: 165W
Load current: 30A
Max. forward impulse current: 250A
Max. off-state voltage: 0.6kV
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Technology: HiPerFRED™
на замовлення 42 шт:
термін постачання 21-30 дні (днів)
2+260.03 грн
10+177.87 грн
Мінімальне замовлення: 2
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IXFH34N50P3 IXFH34N50P3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CBF626144CB820&compId=IXFH(Q)34N50P3.pdf?ci_sign=4d56840987701f45cf2d6fe142e03c4c1af1a499 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 34A; 695W; TO247-3
Type of transistor: N-MOSFET
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Gate charge: 60nC
On-state resistance: 0.18Ω
Drain current: 34A
Power dissipation: 695W
Drain-source voltage: 500V
Kind of channel: enhancement
Case: TO247-3
на замовлення 298 шт:
термін постачання 21-30 дні (днів)
1+715.08 грн
10+547.30 грн
30+417.72 грн
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CPC1718J CPC1718J IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49316DB8320C7&compId=CPC1718.pdf?ci_sign=bfe670bb7367963f0d1f7cc03edd903cea5b35fc Category: DC Solid State Relays
Description: Relay: solid state; 8500mA; max.100VDC; THT; ISOPLUS264™; OptoMOS
Type of relay: solid state
Max. operating current: 8.5A
Switched voltage: max. 100V DC
Mounting: THT
Case: ISOPLUS264™
Relay variant: current source
Manufacturer series: OptoMOS
Body dimensions: 19.91x26.16x5.03mm
Turn-on time: 20ms
Turn-off time: 5ms
Contacts configuration: SPST-NO
On-state resistance: 75mΩ
Control current max.: 100mA
Kind of output: MOSFET
Insulation voltage: 2.5kV
Operating temperature: -40...85°C
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IXFA14N60P IXFA14N60P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CDEEAC7F2C1820&compId=IXFA(H%2CP)14N60P.pdf?ci_sign=5aa1a89e4b5aa53af0f76f9a77c0ac0d77456c56 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 600V; 14A; 300W; TO263
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Power dissipation: 300W
Case: TO263
On-state resistance: 0.55Ω
Mounting: SMD
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
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IXFH14N60P IXFH14N60P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CDEEAC7F2C1820&compId=IXFA(H%2CP)14N60P.pdf?ci_sign=5aa1a89e4b5aa53af0f76f9a77c0ac0d77456c56 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; 300W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Power dissipation: 300W
Case: TO247-3
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
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IXTA14N60P IXTA14N60P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CDF3FD8C429820&compId=IXTA(P%2CQ)14N60P.pdf?ci_sign=6554e46a5935d8c3dafc1333256ae865a9571c1d Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; 300W; TO263; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Power dissipation: 300W
Case: TO263
On-state resistance: 0.55Ω
Mounting: SMD
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Features of semiconductor devices: standard power mosfet
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IXTP14N60P IXTP14N60P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CDF3FD8C429820&compId=IXTA(P%2CQ)14N60P.pdf?ci_sign=6554e46a5935d8c3dafc1333256ae865a9571c1d Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; 300W; TO220AB; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Power dissipation: 300W
Case: TO220AB
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Features of semiconductor devices: standard power mosfet
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CPC1333G CPC1333G IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49232003FE0C7&compId=CPC1333.pdf?ci_sign=dd21761c011cbe67e43ba1e240dd7b0022006e20 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 130mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.13A
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 30Ω
Mounting: THT
Case: DIP4
Body dimensions: 4.57x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 2ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
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CPC1333GRTR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49232003FE0C7&compId=CPC1333.pdf?ci_sign=dd21761c011cbe67e43ba1e240dd7b0022006e20 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 130mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.13A
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 30Ω
Mounting: SMT
Case: DIP4
Body dimensions: 4.57x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 2ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
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IXTP96P085T IXTP96P085T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA09915A690F8BF&compId=IXT_96P085T.pdf?ci_sign=2aa751399db2183305198d4805b69b6937f7379e Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -85V; -96A; 298W; TO220AB
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -85V
Drain current: -96A
Power dissipation: 298W
Case: TO220AB
Gate-source voltage: ±15V
On-state resistance: 13mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 55ns
на замовлення 134 шт:
термін постачання 21-30 дні (днів)
2+403.91 грн
10+255.14 грн
Мінімальне замовлення: 2
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DSEI60-06A DSEI60-06A IXYS DSEI60-06A.pdf description Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 60A; tube; Ifsm: 550A; TO247-2; 166W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 60A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 0.55kA
Case: TO247-2
Max. forward voltage: 1.5V
Power dissipation: 166W
Reverse recovery time: 35ns
Technology: FRED
на замовлення 391 шт:
термін постачання 21-30 дні (днів)
1+467.19 грн
5+358.96 грн
10+349.31 грн
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DSEI60-10A DSEI60-10A IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1EE58CA3054AF872E469&compId=DSEI60-10A.pdf?ci_sign=8762e46d76ad8c4b0191b7d9243f59d3beaf30e4 description Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 60A; tube; Ifsm: 500A; TO247-2; 189W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 60A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 0.5kA
Case: TO247-2
Max. forward voltage: 1.8V
Power dissipation: 189W
Reverse recovery time: 35ns
Technology: FRED
на замовлення 275 шт:
термін постачання 21-30 дні (днів)
1+456.78 грн
5+366.21 грн
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IXYX40N250CHV IXYX40N250CHV IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DB02E3997DFB820&compId=IXYX40N250CHV.pdf?ci_sign=2d191498aa703376848cc72ab126f0b3d316eb60 Category: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 2.5kV; 40A; 1.5kW; TO247HV
Type of transistor: IGBT
Technology: XPT™
Collector-emitter voltage: 2.5kV
Collector current: 40A
Power dissipation: 1.5kW
Case: TO247HV
Gate-emitter voltage: ±20V
Pulsed collector current: 380A
Mounting: THT
Gate charge: 0.27µC
Kind of package: tube
Turn-on time: 43ns
Turn-off time: 505ns
Features of semiconductor devices: high voltage
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IXYX100N120B3 IXYX100N120B3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DADD33AF7E1F820&compId=IXYX100N120B3.pdf?ci_sign=a971886d073e07e1aad4c66229bcf59f49c76f6c Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 100A; 1.15kW; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 100A
Power dissipation: 1.15kW
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 530A
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Turn-on time: 125ns
Turn-off time: 450ns
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IXYX40N450HV IXYX40N450HV IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DB0A6524A537820&compId=IXYX40N450HV.pdf?ci_sign=373c09a202907f40fc0498452328dc4218a349c0 Category: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 4.5kV; 40A; 660W; TO247HV
Type of transistor: IGBT
Technology: XPT™
Collector-emitter voltage: 4.5kV
Collector current: 40A
Power dissipation: 660W
Case: TO247HV
Gate-emitter voltage: ±20V
Pulsed collector current: 350A
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Turn-on time: 786ns
Turn-off time: 1128ns
Features of semiconductor devices: high voltage
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IXYX100N120C3 IXYX100N120C3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DADC5715FFE3820&compId=IXYK(x)100N120C3.pdf?ci_sign=b18916030673c42465debafc009f682214d8ef11 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 100A; 1.15kW; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 100A
Power dissipation: 1.15kW
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 490A
Mounting: THT
Gate charge: 260C
Kind of package: tube
Turn-on time: 143ns
Turn-off time: 271ns
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IXYX200N65B3 IXYX200N65B3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAA737D77A5B820&compId=IXYK(x)200N65B3.pdf?ci_sign=25c65d7ed38fb9d55168d232a11941b535e1f252 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 200A; 1.56kW; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; XPT™
Collector-emitter voltage: 650V
Collector current: 200A
Power dissipation: 1.56kW
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 1.1kA
Mounting: THT
Gate charge: 340nC
Kind of package: tube
Turn-on time: 170ns
Turn-off time: 700ns
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IXYX25N250CV1HV IXYX25N250CV1HV IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99AE8F60D6FA03820&compId=IXYX25N250CV1.pdf?ci_sign=86c780b170d5459c6b833261247dd0b63baeb821 Category: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 2.5kV; 25A; 937W; TO247HV
Type of transistor: IGBT
Technology: XPT™
Collector-emitter voltage: 2.5kV
Collector current: 25A
Power dissipation: 937W
Case: TO247HV
Gate-emitter voltage: ±20V
Pulsed collector current: 235A
Mounting: THT
Gate charge: 147nC
Kind of package: tube
Turn-on time: 51ns
Turn-off time: 575ns
Features of semiconductor devices: high voltage
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IXYX30N170CV1 IXYX30N170CV1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995BB407A41D3B8BF&compId=IXY_30N170CV1.pdf?ci_sign=e9235ed1111ff6a0b95423dcfa0ecfe975d873a2 Category: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 1.7kV; 30A; 937W; PLUS247™
Type of transistor: IGBT
Technology: XPT™
Collector-emitter voltage: 1.7kV
Collector current: 30A
Power dissipation: 937W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 250A
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Turn-on time: 49ns
Turn-off time: 327ns
Features of semiconductor devices: high voltage
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IXYX140N90C3 IXYX140N90C3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAB36CF0F167820&compId=IXYK(X)140N90C3.pdf?ci_sign=ff461166cb57c441f4d71986b43376cd7e351146 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 140A; 1.63kW; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 900V
Collector current: 140A
Power dissipation: 1.63kW
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 840A
Mounting: THT
Gate charge: 330nC
Kind of package: tube
Turn-on time: 122ns
Turn-off time: 0.3µs
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IXYX25N250CV1 IXYX25N250CV1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99AE8F60D6FA03820&compId=IXYX25N250CV1.pdf?ci_sign=86c780b170d5459c6b833261247dd0b63baeb821 Category: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 2.5kV; 25A; 937W; PLUS247™
Type of transistor: IGBT
Technology: XPT™
Collector-emitter voltage: 2.5kV
Collector current: 25A
Power dissipation: 937W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 235A
Mounting: THT
Gate charge: 147nC
Kind of package: tube
Turn-on time: 51ns
Turn-off time: 575ns
Features of semiconductor devices: high voltage
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DMA90U1800LB-TUB IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDA87FF96875C80C0C4&compId=DMA90U1800LB.pdf?ci_sign=bcc21b297e8d57d587ae333632f36e7a41cdf83b Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.8kV; If: 90A; Ifsm: 350A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.8kV
Load current: 90A
Max. forward impulse current: 350A
Electrical mounting: SMT
Max. forward voltage: 1.26V
Case: SMPD
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CLA30E1200NPZ-TUB CLA30E1200NPZ-TUB IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCB5B90F0FAA20C4&compId=CLA30E1200NPZ.pdf?ci_sign=74c61ec5f4c10fe423b76f023345972834cee38e Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 47A; 30A; Igt: 30/50mA; TO263ABHV; SMD; tube
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 47A
Load current: 30A
Gate current: 30/50mA
Case: TO263ABHV
Mounting: SMD
Kind of package: tube
Max. forward impulse current: 255A
Features of semiconductor devices: two gate polarities
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MEK150-04DA IXYS PCN210915_TO240 screw.pdf PCN210930_TO240 screw.pdf Category: Diode modules
Description: Module: diode; common cathode; 400V; If: 150A; TO240AA; Ufmax: 1.4V
Type of semiconductor module: diode
Semiconductor structure: common cathode
Max. off-state voltage: 0.4kV
Load current: 150A
Case: TO240AA
Max. forward voltage: 1.4V
Max. forward impulse current: 1.2kA
Electrical mounting: screw
Max. load current: 150A
Mechanical mounting: screw
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MCD250-08io1 IXYS MCC,MCD_250.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 800V; 287Ax2; W102; Ufmax: 1.36V; Ifsm: 9kA
Kind of package: bulk
Electrical mounting: FASTON connectors; screw
Semiconductor structure: double series
Type of semiconductor module: diode-thyristor
Mechanical mounting: screw
Case: W102
Gate current: 150/200mA
Threshold on-voltage: 0.85V
Max. forward voltage: 1.36V
Load current: 287A x2
Max. load current: 450A
Max. off-state voltage: 0.8kV
Max. forward impulse current: 9kA
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MKI75-06A7
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge,NTC thermistor
Collector current: 60A
Power dissipation: 280W
Case: E2-Pack
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Max. off-state voltage: 0.6kV
Technology: NPT
Application: for UPS; motors
Topology: H-bridge; NTC thermistor
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
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IXFK520N075T2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D4BAAC72B01820&compId=IXFK(X)520N075T2.pdf?ci_sign=c82dec6155d9cee277baecf17a89f241b95daf23
IXFK520N075T2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 520A; 1250W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 520A
Power dissipation: 1.25kW
Case: TO264
On-state resistance: 2.2mΩ
Mounting: THT
Gate charge: 545nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
на замовлення 296 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+881.50 грн
В кошику  од. на суму  грн.
IXFX520N075T2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D4BAAC72B01820&compId=IXFK(X)520N075T2.pdf?ci_sign=c82dec6155d9cee277baecf17a89f241b95daf23
IXFX520N075T2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 520A; 1250W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 520A
Power dissipation: 1.25kW
Case: PLUS247™
On-state resistance: 2.2mΩ
Mounting: THT
Gate charge: 545nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
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DPG10P400PJ DPG10P400PJ.pdf
DPG10P400PJ
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 10A; tube; Ifsm: 130A; ISOPLUS220™
Mounting: THT
Semiconductor structure: double series
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Case: ISOPLUS220™
Type of diode: rectifying
Kind of package: tube
Reverse recovery time: 45ns
Max. forward voltage: 1.28V
Load current: 10A
Power dissipation: 60W
Max. forward impulse current: 130A
Max. off-state voltage: 0.4kV
на замовлення 18 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+402.18 грн
3+335.62 грн
10+296.99 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
DPG10I400PA pVersion=0046&contRep=ZT&docId=005056AB82531EE98AD4F952FFE2B8BF&compId=DPG10I400PA.pdf?ci_sign=a1fffe2dd22dde2d2743b8bda8be89ffa1ad3840
DPG10I400PA
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 10A; tube; Ifsm: 150A; TO220AC; 65W
Mounting: THT
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Case: TO220AC
Type of diode: rectifying
Kind of package: tube
Reverse recovery time: 45ns
Max. forward voltage: 1.03V
Load current: 10A
Power dissipation: 65W
Max. forward impulse current: 150A
Max. off-state voltage: 0.4kV
на замовлення 83 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
4+101.41 грн
10+86.92 грн
50+81.29 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
DPG10I200PM DPG10I200PM.pdf
DPG10I200PM
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10A; tube; Ifsm: 140A; TO220FP-2; 35W
Mounting: THT
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Case: TO220FP-2
Type of diode: rectifying
Kind of package: tube
Reverse recovery time: 35ns
Max. forward voltage: 1.27V
Load current: 10A
Power dissipation: 35W
Max. forward impulse current: 140A
Max. off-state voltage: 200V
на замовлення 56 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
4+125.68 грн
50+62.78 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
DPG10I400PM DPG10I400PM.pdf
DPG10I400PM
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 10A; tube; Ifsm: 150A; TO220FP-2; 35W
Mounting: THT
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Case: TO220FP-2
Type of diode: rectifying
Kind of package: tube
Reverse recovery time: 45ns
Max. forward voltage: 1.32V
Load current: 10A
Power dissipation: 35W
Max. forward impulse current: 150A
Max. off-state voltage: 0.4kV
на замовлення 43 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+200.22 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
DPG10I200PA media?resourcetype=datasheets&itemid=EC448438-07B9-4C8C-BA5D-4A6822B3E045&filename=Littelfuse-Power-Semiconductors-DPG10I200PA-Datasheet
DPG10I200PA
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10A; tube; Ifsm: 140A; TO220AC; 65W
Mounting: THT
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Case: TO220AC
Type of diode: rectifying
Kind of package: tube
Reverse recovery time: 35ns
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 1.27V
Load current: 10A
Power dissipation: 65W
Max. forward impulse current: 140A
Max. off-state voltage: 200V
на замовлення 190 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
4+115.28 грн
10+91.75 грн
50+79.68 грн
100+74.05 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IXDN614YI pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A5D71347C948CA50&compId=IXDD614CI-DTE.pdf?ci_sign=56f1c241270a7cf5231e597905eedca728d0721d
IXDN614YI
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO263-5
Output current: -14...14A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 140ns
Turn-off time: 130ns
на замовлення 168 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+337.17 грн
10+243.87 грн
Мінімальне замовлення: 2
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IXDN614SITR littelfuse-integrated-circuits-ixd-614-datasheet?assetguid=e66ef830-2f72-45bc-86ab-607383f42514
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -14...14A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 140ns
Turn-off time: 130ns
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IXGT25N160 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAE2D104B897820&compId=IXGH(T)25N160.pdf?ci_sign=cb53774ff2fd2307076286b94f4d40db8e75e75f
IXGT25N160
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; NPT; 1.6kV; 25A; 300W; TO268
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.6kV
Collector current: 25A
Power dissipation: 300W
Case: TO268
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: SMD
Gate charge: 84nC
Kind of package: tube
Turn-on time: 283ns
Turn-off time: 526ns
Features of semiconductor devices: high voltage
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IXSH80N120L2KHV pVersion=0046&contRep=ZT&docId=005056AB281E1FD099C55B7758D1E0E1&compId=IXSH80N120L2KHV.pdf?ci_sign=be010a8c633b27bff592167438e90ea2234da827
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 58A; Idm: 198A; 395W
Mounting: THT
Case: TO247-4
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Technology: SiC
Gate-source voltage: -10...23V
Gate charge: 135nC
On-state resistance: 58mΩ
Drain current: 58A
Power dissipation: 395W
Drain-source voltage: 1.2kV
Pulsed drain current: 198A
Polarisation: unipolar
Kind of channel: enhancement
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IXFN340N07 pVersion=0046&contRep=ZT&docId=E2920386B7F856F19A99005056AB752F&compId=98547.pdf?ci_sign=105d98d49cea6a7db7877e066e9a5c3dc470e269
IXFN340N07
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 70V; 340A; SOT227B; screw; Idm: 1.36kA
Polarisation: unipolar
Drain-source voltage: 70V
Drain current: 340A
Pulsed drain current: 1.36kA
Power dissipation: 700W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 4mΩ
Gate charge: 0.49µC
Kind of channel: enhancement
Electrical mounting: screw
Mechanical mounting: screw
Reverse recovery time: 200ns
Technology: HiPerFET™
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
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IXFT340N075T2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CBFB39DDD91820&compId=IXFH(T)340N075T2.pdf?ci_sign=dac52e37406d8c3466ad703fb0fc38b3c9cc04d1
IXFT340N075T2
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 340A; 935W; TO268; 75ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 340A
Power dissipation: 935W
Case: TO268
On-state resistance: 3.2mΩ
Mounting: SMD
Gate charge: 300nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 75ns
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IXFH340N075T2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CBFB39DDD91820&compId=IXFH(T)340N075T2.pdf?ci_sign=dac52e37406d8c3466ad703fb0fc38b3c9cc04d1
IXFH340N075T2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 340A; 935W; TO247-3; 75ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 340A
Power dissipation: 935W
Case: TO247-3
On-state resistance: 3.2mΩ
Mounting: THT
Gate charge: 300nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 75ns
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IXTH340N04T4 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CC012C20DD1820&compId=IXTH(P)340N04T4.pdf?ci_sign=6728356b6a9ab93c60578b097a3e695f5f987fdf
IXTH340N04T4
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 340A; 480W; TO247-3; 43ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 340A
Power dissipation: 480W
Case: TO247-3
On-state resistance: 1.9mΩ
Mounting: THT
Gate charge: 256nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 43ns
Features of semiconductor devices: thrench gate power mosfet
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IXTA340N04T4 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CC072A5B69F820&compId=IXTA340N04T4.pdf?ci_sign=a246af44e28256228f00eb022d2de3e39723ed2f
IXTA340N04T4
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 340A; 480W; TO263; 43ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 340A
Power dissipation: 480W
Case: TO263
On-state resistance: 1.7mΩ
Mounting: SMD
Gate charge: 256nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 43ns
Features of semiconductor devices: thrench gate power mosfet
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IXTA340N04T4-7 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CC072A5B69F820&compId=IXTA340N04T4.pdf?ci_sign=a246af44e28256228f00eb022d2de3e39723ed2f
IXTA340N04T4-7
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 340A; 480W; TO263-7; 43ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 340A
Power dissipation: 480W
Case: TO263-7
On-state resistance: 1.7mΩ
Mounting: SMD
Gate charge: 256nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 43ns
Features of semiconductor devices: thrench gate power mosfet
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IXTP340N04T4 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CC012C20DD1820&compId=IXTH(P)340N04T4.pdf?ci_sign=6728356b6a9ab93c60578b097a3e695f5f987fdf
IXTP340N04T4
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 340A; 480W; TO220AB; 43ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 340A
Power dissipation: 480W
Case: TO220AB
On-state resistance: 1.9mΩ
Mounting: THT
Gate charge: 256nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 43ns
Features of semiconductor devices: thrench gate power mosfet
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MMIX1X340N65B4 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAA78862F0E7820&compId=MMIX1X340N65B4.pdf?ci_sign=d2491b7f4fdece1fa3ddaa0a18602d4894132816
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 650V; 295A; 1.2kW; SMPD
Type of transistor: IGBT
Power dissipation: 1.2kW
Case: SMPD
Mounting: SMD
Gate charge: 553nC
Kind of package: tube
Turn-on time: 119ns
Turn-off time: 346ns
Gate-emitter voltage: ±20V
Collector current: 295A
Collector-emitter voltage: 650V
Pulsed collector current: 1.2kA
Technology: BiMOSFET™; GenX3™; XPT™
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IXFH320N10T2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A2856F4A8DDE7820&compId=IXFH(T)320N10T2.pdf?ci_sign=712ea63a2238f63f81d01689168cb986a264e110
IXFH320N10T2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 320A; 1000W; TO247-3; 98ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 320A
Power dissipation: 1kW
Case: TO247-3
On-state resistance: 3.5mΩ
Mounting: THT
Gate charge: 430nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 98ns
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IXFT320N10T2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A2856F4A8DDE7820&compId=IXFH(T)320N10T2.pdf?ci_sign=712ea63a2238f63f81d01689168cb986a264e110 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9618AC669820&compId=IXFT320N10T2.pdf?ci_sign=01df806445c3914f7627f006ec4695a8a5f161d0
IXFT320N10T2
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 320A; 1000W; TO268; 98ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 320A
Power dissipation: 1kW
Case: TO268
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 430nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 98ns
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MIXA225PF1200TSF MIXA225PF1200TSF.pdf
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 250A
Topology: IGBT half-bridge; NTC thermistor
Electrical mounting: Press-in PCB
Application: fans; for pump; for UPS; motors
Semiconductor structure: transistor/transistor
Mechanical mounting: screw
Type of semiconductor module: IGBT
Case: SimBus F
Technology: Sonic FRD™; XPT™
Gate-emitter voltage: ±20V
Collector current: 250A
Pulsed collector current: 500A
Power dissipation: 1.1kW
Max. off-state voltage: 1.2kV
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MIXA225RF1200TSF MIXA225RF1200TSF.pdf
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper,NTC thermistor
Topology: boost chopper; NTC thermistor
Electrical mounting: Press-in PCB
Semiconductor structure: diode/transistor
Mechanical mounting: screw
Type of semiconductor module: IGBT
Case: SimBus F
Technology: Sonic FRD™; XPT™
Gate-emitter voltage: ±20V
Collector current: 250A
Pulsed collector current: 500A
Power dissipation: 1.1kW
Max. off-state voltage: 1.2kV
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DCG45X1200NA pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA99594E6C1A940C7&compId=DCG45X1200NA.pdf?ci_sign=1c51b557c6e26ea3de51342637ecca197c93d6b6
DCG45X1200NA
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double independent; 1.2kV; 22Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 1.2kV
Load current: 22A x2
Case: SOT227B
Max. forward voltage: 2.2V
Electrical mounting: screw
Mechanical mounting: screw
Features of semiconductor devices: Schottky
Technology: SiC
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MG1750S-BN4MM media?resourcetype=datasheets&itemid=974f4440-f0a9-4745-b140-b9e5ed96929a&filename=littelfuse_power_semiconductor_igbt_module_mg1750s_bn4mm_datasheet.pdf
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 50A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.7kV
Collector current: 50A
Case: Y4-M5
Electrical mounting: FASTON connectors; screw
Technology: Field Stop; Trench
Mechanical mounting: screw
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MG12150S-BN2MM littelfuse_power_semiconductor_igbt_module_mg12150s_bn2mm_datasheet.pdf.pdf
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 150A
Case: Y4-M5
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Technology: Field Stop; Trench
Mechanical mounting: screw
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MG12200D-BN2MM
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 200A
Case: Y3-DCB
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 400A
Technology: Field Stop; Trench
Mechanical mounting: screw
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MG17100S-BN4MM
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.7kV
Collector current: 100A
Case: Y4-M5
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: Field Stop; Trench
Mechanical mounting: screw
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MG1775S-BN4MM littelfuse_power_semiconductor_igbt_module_mg1775s_bn4mm_datasheet.pdf?assetguid=fc472a27-3dbe-4c5b-b40e-11b48e024b3d
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 75A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.7kV
Collector current: 75A
Case: Y4-M5
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Technology: Field Stop; Trench
Mechanical mounting: screw
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MG12100S-BN2MM media?resourcetype=datasheets&itemid=e4f80881-79d4-48fd-9161-54b8568e400c&filename=littelfuse_power_semiconductor_igbt_module_mg12100s_bn2mm_datasheet.pdf
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 100A
Case: package S
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: Field Stop; Trench
Mechanical mounting: screw
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IXTP230N04T4 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CD107B235FB820&compId=IXTA(P)230N04T4.pdf?ci_sign=3a6bf224573bba64588433477b6903b439191066
IXTP230N04T4
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 230A; 340W; TO220AB; 32ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 230A
Power dissipation: 340W
Case: TO220AB
On-state resistance: 2.9mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 32ns
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IXFH12N80P IXFH12N80P.pdf
IXFH12N80P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 12A; 360W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 12A
Power dissipation: 360W
Case: TO247-3
On-state resistance: 0.85Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 51nC
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IXTA230N04T4 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CD107B235FB820&compId=IXTA(P)230N04T4.pdf?ci_sign=3a6bf224573bba64588433477b6903b439191066
IXTA230N04T4
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 230A; 340W; TO263; 32ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 230A
Power dissipation: 340W
Case: TO263
On-state resistance: 2.9mΩ
Mounting: SMD
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 32ns
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DSEP29-06A pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BA82786FD2576143&compId=DSEP29-06A.pdf?ci_sign=82b5f05dc3fbb9ce8d39aa34aa78df78ee791b35
DSEP29-06A
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 250A; TO220AC; 165W
Case: TO220AC
Mounting: THT
Kind of package: tube
Type of diode: rectifying
Reverse recovery time: 35ns
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 1.26V
Power dissipation: 165W
Load current: 30A
Max. forward impulse current: 250A
Max. off-state voltage: 0.6kV
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Technology: HiPerFRED™
на замовлення 257 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+309.44 грн
10+173.85 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
DSEP29-06B Littelfuse-Power-Semiconductors-DSEP29-06B-Datasheet?assetguid=ee90203e-7c1e-47ff-b7dc-ff230a0cf920
DSEP29-06B
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 250A; TO220AC; 165W
Case: TO220AC
Mounting: THT
Kind of package: tube
Type of diode: rectifying
Reverse recovery time: 25ns
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 2.52V
Power dissipation: 165W
Load current: 30A
Max. forward impulse current: 250A
Max. off-state voltage: 0.6kV
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Technology: HiPerFRED™
на замовлення 42 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+260.03 грн
10+177.87 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXFH34N50P3 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CBF626144CB820&compId=IXFH(Q)34N50P3.pdf?ci_sign=4d56840987701f45cf2d6fe142e03c4c1af1a499
IXFH34N50P3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 34A; 695W; TO247-3
Type of transistor: N-MOSFET
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Gate charge: 60nC
On-state resistance: 0.18Ω
Drain current: 34A
Power dissipation: 695W
Drain-source voltage: 500V
Kind of channel: enhancement
Case: TO247-3
на замовлення 298 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+715.08 грн
10+547.30 грн
30+417.72 грн
В кошику  од. на суму  грн.
CPC1718J pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49316DB8320C7&compId=CPC1718.pdf?ci_sign=bfe670bb7367963f0d1f7cc03edd903cea5b35fc
CPC1718J
Виробник: IXYS
Category: DC Solid State Relays
Description: Relay: solid state; 8500mA; max.100VDC; THT; ISOPLUS264™; OptoMOS
Type of relay: solid state
Max. operating current: 8.5A
Switched voltage: max. 100V DC
Mounting: THT
Case: ISOPLUS264™
Relay variant: current source
Manufacturer series: OptoMOS
Body dimensions: 19.91x26.16x5.03mm
Turn-on time: 20ms
Turn-off time: 5ms
Contacts configuration: SPST-NO
On-state resistance: 75mΩ
Control current max.: 100mA
Kind of output: MOSFET
Insulation voltage: 2.5kV
Operating temperature: -40...85°C
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IXFA14N60P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CDEEAC7F2C1820&compId=IXFA(H%2CP)14N60P.pdf?ci_sign=5aa1a89e4b5aa53af0f76f9a77c0ac0d77456c56
IXFA14N60P
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 600V; 14A; 300W; TO263
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Power dissipation: 300W
Case: TO263
On-state resistance: 0.55Ω
Mounting: SMD
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
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IXFH14N60P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CDEEAC7F2C1820&compId=IXFA(H%2CP)14N60P.pdf?ci_sign=5aa1a89e4b5aa53af0f76f9a77c0ac0d77456c56
IXFH14N60P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; 300W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Power dissipation: 300W
Case: TO247-3
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
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IXTA14N60P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CDF3FD8C429820&compId=IXTA(P%2CQ)14N60P.pdf?ci_sign=6554e46a5935d8c3dafc1333256ae865a9571c1d
IXTA14N60P
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; 300W; TO263; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Power dissipation: 300W
Case: TO263
On-state resistance: 0.55Ω
Mounting: SMD
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Features of semiconductor devices: standard power mosfet
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IXTP14N60P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CDF3FD8C429820&compId=IXTA(P%2CQ)14N60P.pdf?ci_sign=6554e46a5935d8c3dafc1333256ae865a9571c1d
IXTP14N60P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; 300W; TO220AB; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Power dissipation: 300W
Case: TO220AB
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Features of semiconductor devices: standard power mosfet
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CPC1333G pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49232003FE0C7&compId=CPC1333.pdf?ci_sign=dd21761c011cbe67e43ba1e240dd7b0022006e20
CPC1333G
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 130mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.13A
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 30Ω
Mounting: THT
Case: DIP4
Body dimensions: 4.57x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 2ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
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CPC1333GRTR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49232003FE0C7&compId=CPC1333.pdf?ci_sign=dd21761c011cbe67e43ba1e240dd7b0022006e20
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 130mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.13A
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 30Ω
Mounting: SMT
Case: DIP4
Body dimensions: 4.57x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 2ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
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IXTP96P085T pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA09915A690F8BF&compId=IXT_96P085T.pdf?ci_sign=2aa751399db2183305198d4805b69b6937f7379e
IXTP96P085T
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -85V; -96A; 298W; TO220AB
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -85V
Drain current: -96A
Power dissipation: 298W
Case: TO220AB
Gate-source voltage: ±15V
On-state resistance: 13mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 55ns
на замовлення 134 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+403.91 грн
10+255.14 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
DSEI60-06A description DSEI60-06A.pdf
DSEI60-06A
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 60A; tube; Ifsm: 550A; TO247-2; 166W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 60A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 0.55kA
Case: TO247-2
Max. forward voltage: 1.5V
Power dissipation: 166W
Reverse recovery time: 35ns
Technology: FRED
на замовлення 391 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+467.19 грн
5+358.96 грн
10+349.31 грн
В кошику  од. на суму  грн.
DSEI60-10A description pVersion=0046&contRep=ZT&docId=005056AB752F1EE58CA3054AF872E469&compId=DSEI60-10A.pdf?ci_sign=8762e46d76ad8c4b0191b7d9243f59d3beaf30e4
DSEI60-10A
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 60A; tube; Ifsm: 500A; TO247-2; 189W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 60A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 0.5kA
Case: TO247-2
Max. forward voltage: 1.8V
Power dissipation: 189W
Reverse recovery time: 35ns
Technology: FRED
на замовлення 275 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+456.78 грн
5+366.21 грн
В кошику  од. на суму  грн.
IXYX40N250CHV pVersion=0046&contRep=ZT&docId=005056AB82531ED99DB02E3997DFB820&compId=IXYX40N250CHV.pdf?ci_sign=2d191498aa703376848cc72ab126f0b3d316eb60
IXYX40N250CHV
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 2.5kV; 40A; 1.5kW; TO247HV
Type of transistor: IGBT
Technology: XPT™
Collector-emitter voltage: 2.5kV
Collector current: 40A
Power dissipation: 1.5kW
Case: TO247HV
Gate-emitter voltage: ±20V
Pulsed collector current: 380A
Mounting: THT
Gate charge: 0.27µC
Kind of package: tube
Turn-on time: 43ns
Turn-off time: 505ns
Features of semiconductor devices: high voltage
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IXYX100N120B3 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DADD33AF7E1F820&compId=IXYX100N120B3.pdf?ci_sign=a971886d073e07e1aad4c66229bcf59f49c76f6c
IXYX100N120B3
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 100A; 1.15kW; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 100A
Power dissipation: 1.15kW
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 530A
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Turn-on time: 125ns
Turn-off time: 450ns
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IXYX40N450HV pVersion=0046&contRep=ZT&docId=005056AB82531ED99DB0A6524A537820&compId=IXYX40N450HV.pdf?ci_sign=373c09a202907f40fc0498452328dc4218a349c0
IXYX40N450HV
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 4.5kV; 40A; 660W; TO247HV
Type of transistor: IGBT
Technology: XPT™
Collector-emitter voltage: 4.5kV
Collector current: 40A
Power dissipation: 660W
Case: TO247HV
Gate-emitter voltage: ±20V
Pulsed collector current: 350A
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Turn-on time: 786ns
Turn-off time: 1128ns
Features of semiconductor devices: high voltage
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IXYX100N120C3 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DADC5715FFE3820&compId=IXYK(x)100N120C3.pdf?ci_sign=b18916030673c42465debafc009f682214d8ef11
IXYX100N120C3
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 100A; 1.15kW; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 100A
Power dissipation: 1.15kW
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 490A
Mounting: THT
Gate charge: 260C
Kind of package: tube
Turn-on time: 143ns
Turn-off time: 271ns
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IXYX200N65B3 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAA737D77A5B820&compId=IXYK(x)200N65B3.pdf?ci_sign=25c65d7ed38fb9d55168d232a11941b535e1f252
IXYX200N65B3
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 200A; 1.56kW; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; XPT™
Collector-emitter voltage: 650V
Collector current: 200A
Power dissipation: 1.56kW
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 1.1kA
Mounting: THT
Gate charge: 340nC
Kind of package: tube
Turn-on time: 170ns
Turn-off time: 700ns
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IXYX25N250CV1HV pVersion=0046&contRep=ZT&docId=005056AB82531ED99AE8F60D6FA03820&compId=IXYX25N250CV1.pdf?ci_sign=86c780b170d5459c6b833261247dd0b63baeb821
IXYX25N250CV1HV
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 2.5kV; 25A; 937W; TO247HV
Type of transistor: IGBT
Technology: XPT™
Collector-emitter voltage: 2.5kV
Collector current: 25A
Power dissipation: 937W
Case: TO247HV
Gate-emitter voltage: ±20V
Pulsed collector current: 235A
Mounting: THT
Gate charge: 147nC
Kind of package: tube
Turn-on time: 51ns
Turn-off time: 575ns
Features of semiconductor devices: high voltage
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IXYX30N170CV1 pVersion=0046&contRep=ZT&docId=005056AB82531EE995BB407A41D3B8BF&compId=IXY_30N170CV1.pdf?ci_sign=e9235ed1111ff6a0b95423dcfa0ecfe975d873a2
IXYX30N170CV1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 1.7kV; 30A; 937W; PLUS247™
Type of transistor: IGBT
Technology: XPT™
Collector-emitter voltage: 1.7kV
Collector current: 30A
Power dissipation: 937W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 250A
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Turn-on time: 49ns
Turn-off time: 327ns
Features of semiconductor devices: high voltage
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IXYX140N90C3 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAB36CF0F167820&compId=IXYK(X)140N90C3.pdf?ci_sign=ff461166cb57c441f4d71986b43376cd7e351146
IXYX140N90C3
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 140A; 1.63kW; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 900V
Collector current: 140A
Power dissipation: 1.63kW
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 840A
Mounting: THT
Gate charge: 330nC
Kind of package: tube
Turn-on time: 122ns
Turn-off time: 0.3µs
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IXYX25N250CV1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99AE8F60D6FA03820&compId=IXYX25N250CV1.pdf?ci_sign=86c780b170d5459c6b833261247dd0b63baeb821
IXYX25N250CV1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 2.5kV; 25A; 937W; PLUS247™
Type of transistor: IGBT
Technology: XPT™
Collector-emitter voltage: 2.5kV
Collector current: 25A
Power dissipation: 937W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 235A
Mounting: THT
Gate charge: 147nC
Kind of package: tube
Turn-on time: 51ns
Turn-off time: 575ns
Features of semiconductor devices: high voltage
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DMA90U1800LB-TUB pVersion=0046&contRep=ZT&docId=005056AB90B41EDA87FF96875C80C0C4&compId=DMA90U1800LB.pdf?ci_sign=bcc21b297e8d57d587ae333632f36e7a41cdf83b
Виробник: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.8kV; If: 90A; Ifsm: 350A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.8kV
Load current: 90A
Max. forward impulse current: 350A
Electrical mounting: SMT
Max. forward voltage: 1.26V
Case: SMPD
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CLA30E1200NPZ-TUB pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCB5B90F0FAA20C4&compId=CLA30E1200NPZ.pdf?ci_sign=74c61ec5f4c10fe423b76f023345972834cee38e
CLA30E1200NPZ-TUB
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 47A; 30A; Igt: 30/50mA; TO263ABHV; SMD; tube
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 47A
Load current: 30A
Gate current: 30/50mA
Case: TO263ABHV
Mounting: SMD
Kind of package: tube
Max. forward impulse current: 255A
Features of semiconductor devices: two gate polarities
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MEK150-04DA PCN210915_TO240 screw.pdf PCN210930_TO240 screw.pdf
Виробник: IXYS
Category: Diode modules
Description: Module: diode; common cathode; 400V; If: 150A; TO240AA; Ufmax: 1.4V
Type of semiconductor module: diode
Semiconductor structure: common cathode
Max. off-state voltage: 0.4kV
Load current: 150A
Case: TO240AA
Max. forward voltage: 1.4V
Max. forward impulse current: 1.2kA
Electrical mounting: screw
Max. load current: 150A
Mechanical mounting: screw
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MCD250-08io1 MCC,MCD_250.pdf
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 800V; 287Ax2; W102; Ufmax: 1.36V; Ifsm: 9kA
Kind of package: bulk
Electrical mounting: FASTON connectors; screw
Semiconductor structure: double series
Type of semiconductor module: diode-thyristor
Mechanical mounting: screw
Case: W102
Gate current: 150/200mA
Threshold on-voltage: 0.85V
Max. forward voltage: 1.36V
Load current: 287A x2
Max. load current: 450A
Max. off-state voltage: 0.8kV
Max. forward impulse current: 9kA
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