| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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PLA134 | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NO; Icntrl max: 50mA; 350mA; max.100VAC Type of relay: solid state Contacts configuration: SPST-NO Max. operating current: 350mA Switched voltage: max. 100V AC; max. 100V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 3Ω Mounting: THT Case: DIP6 Operating temperature: -40...85°C Turn-on time: 5ms Turn-off time: 5ms Body dimensions: 8.38x6.35x3.3mm Control current max.: 50mA Insulation voltage: 3.75kV Kind of output: MOSFET |
на замовлення 10 шт: термін постачання 21-30 дні (днів) |
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CPC1511Y | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NO; Icntrl max: 50mA; 450mA; max.230VAC Type of relay: solid state Contacts configuration: SPST-NO Max. operating current: 450mA Switched voltage: max. 230V AC; max. 230V DC Relay variant: 1-phase; current source On-state resistance: 4Ω Mounting: THT Case: SIP4 Operating temperature: -40...85°C Turn-on time: 4ms Turn-off time: 2ms Body dimensions: 21.08x10.16x3.3mm Control current max.: 50mA Insulation voltage: 3.75kV Kind of output: MOSFET |
на замовлення 210 шт: термін постачання 21-30 дні (днів) |
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DMA50I800HA | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 800V; 50A; tube; Ifsm: 500A; TO247-2 Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.8kV Load current: 50A Semiconductor structure: single diode Kind of package: tube Max. forward impulse current: 0.5kA Case: TO247-2 |
на замовлення 271 шт: термін постачання 21-30 дні (днів) |
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DMA50I1200HA | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 1.2kV; 50A; tube; Ifsm: 500A; TO247-2 Type of diode: rectifying Mounting: THT Max. off-state voltage: 1.2kV Load current: 50A Semiconductor structure: single diode Kind of package: tube Max. forward impulse current: 0.5kA Case: TO247-2 |
на замовлення 293 шт: термін постачання 21-30 дні (днів) |
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DMA50I1600HA | IXYS |
Category: THT universal diodesDescription: Diode: rectifying; THT; 1.6kV; 50A; tube; Ifsm: 500A; TO247-2 Type of diode: rectifying Mounting: THT Max. off-state voltage: 1.6kV Load current: 50A Semiconductor structure: single diode Kind of package: tube Max. forward impulse current: 0.5kA Case: TO247-2 |
на замовлення 54 шт: термін постачання 21-30 дні (днів) |
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IXFK32N80Q3 | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 800V; 32A; 1000W; TO264 Type of transistor: N-MOSFET Mounting: THT Kind of package: tube Polarisation: unipolar Gate charge: 0.14µC On-state resistance: 0.27Ω Drain current: 32A Power dissipation: 1kW Drain-source voltage: 800V Kind of channel: enhancement Case: TO264 |
на замовлення 22 шт: термін постачання 21-30 дні (днів) |
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IXTP80N10T | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 80A; 230W; TO220AB; 100ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 80A Power dissipation: 230W Case: TO220AB On-state resistance: 14mΩ Mounting: THT Gate charge: 60nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 100ns |
на замовлення 103 шт: термін постачання 21-30 дні (днів) |
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IXTP80N12T2 | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 120V; 80A; 325W; TO220AB; 90ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 120V Drain current: 80A Power dissipation: 325W Case: TO220AB On-state resistance: 17mΩ Mounting: THT Gate charge: 80nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 90ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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MCC95-12io1B | IXYS |
Category: Thyristor modulesDescription: Module: thyristor; double series; 1.2kV; 116A; TO240AA; screw Type of semiconductor module: thyristor Semiconductor structure: double series Max. off-state voltage: 1.2kV Load current: 116A Case: TO240AA Max. forward voltage: 1.29V Max. forward impulse current: 2.25kA Gate current: 150/200mA Electrical mounting: screw Kind of package: bulk Mechanical mounting: screw |
на замовлення 13 шт: термін постачання 21-30 дні (днів) |
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IXTK20N150 | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 1.5kV; 20A; 1250W; TO264; 1.1us Case: TO264 Mounting: THT Type of transistor: N-MOSFET Features of semiconductor devices: standard power mosfet Polarisation: unipolar Gate charge: 215nC Reverse recovery time: 1.1µs On-state resistance: 1Ω Drain current: 20A Power dissipation: 1.25kW Drain-source voltage: 1.5kV Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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IXTX20N150 | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 1.5kV; 20A; 1250W; PLUS247™; 1.1us Case: PLUS247™ Mounting: THT Type of transistor: N-MOSFET Features of semiconductor devices: standard power mosfet Polarisation: unipolar Gate charge: 215nC Reverse recovery time: 1.1µs On-state resistance: 1Ω Drain current: 20A Power dissipation: 1.25kW Drain-source voltage: 1.5kV Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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IXFK220N15P | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 150V; 220A; 1250W; TO264 Case: TO264 Mounting: THT Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 162nC On-state resistance: 9mΩ Drain current: 220A Power dissipation: 1.25kW Drain-source voltage: 150V Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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IXTQ120N15P | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; PolarHT™; unipolar; 150V; 120A; 600W; TO3P Case: TO3P Mounting: THT Type of transistor: N-MOSFET Polarisation: unipolar Gate-source voltage: ±20V Gate charge: 150nC Reverse recovery time: 150ns On-state resistance: 16mΩ Drain current: 120A Power dissipation: 600W Drain-source voltage: 150V Kind of package: tube Kind of channel: enhancement Technology: PolarHT™ |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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IXFH160N15T2 | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 150V; 160A; 880W; TO247-3 Case: TO247-3 Mounting: THT Features of semiconductor devices: thrench gate power mosfet Type of transistor: N-MOSFET Kind of channel: enhancement Kind of package: tube Polarisation: unipolar Gate charge: 253nC On-state resistance: 9mΩ Drain current: 160A Power dissipation: 880W Drain-source voltage: 150V |
на замовлення 285 шт: термін постачання 21-30 дні (днів) |
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IXFK360N15T2 | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; GigaMOS™; unipolar; 150V; 360A; 1670W; TO264 Case: TO264 Mounting: THT Type of transistor: N-MOSFET Kind of channel: enhancement Kind of package: tube Polarisation: unipolar Gate-source voltage: ±20V Gate charge: 715nC Reverse recovery time: 150ns On-state resistance: 4mΩ Drain current: 360A Power dissipation: 1.67kW Drain-source voltage: 150V Technology: GigaMOS™; HiPerFET™; TrenchT2™ |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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IXFN360N15T2 | IXYS |
Category: Transistor modules MOSFETDescription: Module; single transistor; 150V; 310A; SOT227B; screw; Idm: 900A Case: SOT227B Electrical mounting: screw Mechanical mounting: screw Semiconductor structure: single transistor Type of semiconductor module: MOSFET transistor Kind of channel: enhancement Polarisation: unipolar Gate-source voltage: ±30V Gate charge: 715nC Reverse recovery time: 150ns On-state resistance: 4mΩ Drain current: 310A Power dissipation: 1.07kW Drain-source voltage: 150V Pulsed drain current: 900A Technology: GigaMOS™; HiPerFET™; TrenchT2™ |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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IXFX360N15T2 | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; GigaMOS™; unipolar; 150V; 360A; 1670W; 150ns Case: PLUS247™ Mounting: THT Type of transistor: N-MOSFET Kind of channel: enhancement Kind of package: tube Polarisation: unipolar Gate-source voltage: ±20V Gate charge: 715nC Reverse recovery time: 150ns On-state resistance: 4mΩ Drain current: 360A Power dissipation: 1.67kW Drain-source voltage: 150V Technology: GigaMOS™; HiPerFET™; TrenchT2™ |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
| MMIX1H60N150V1 | IXYS |
Category: SMD/THT thyristorsDescription: Thyristor; 1.5kV; SMPD; SMD; 32kA Type of thyristor: thyristor Max. off-state voltage: 1.5kV Case: SMPD Mounting: SMD Max. forward impulse current: 32kA Features of semiconductor devices: freewheelling diode; MOS-gated thyristor (MGT) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| MMIX1F360N15T2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 150V; 235A; Idm: 900A Case: SMPD Mounting: SMD Type of transistor: N-MOSFET Kind of channel: enhancement Polarisation: unipolar Gate-source voltage: ±20V Gate charge: 715nC Reverse recovery time: 150ns On-state resistance: 4.4mΩ Drain current: 235A Power dissipation: 680W Drain-source voltage: 150V Pulsed drain current: 900A Technology: GigaMOS™; HiPerFET™; TrenchT2™ |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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IXTA4N70X2 | IXYS |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 700V; 4A; Idm: 8A; 80W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 700V Drain current: 4A Pulsed drain current: 8A Power dissipation: 80W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 0.85Ω Mounting: SMD Gate charge: 11.8nC Kind of package: tube Kind of channel: enhancement |
на замовлення 38 шт: термін постачання 21-30 дні (днів) |
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CPC1025N | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.400VAC Case: SOP4 On-state resistance: 30Ω Turn-off time: 1ms Turn-on time: 2ms Body dimensions: 4.09x3.81x2.03mm Control current max.: 50mA Max. operating current: 120mA Insulation voltage: 1.5kV Relay variant: 1-phase; current source Manufacturer series: OptoMOS Kind of output: MOSFET Mounting: SMT Type of relay: solid state Contacts configuration: SPST-NO Operating temperature: -40...85°C Switched voltage: max. 400V AC; max. 400V DC |
на замовлення 1 шт: термін постачання 21-30 дні (днів) |
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DSEI2x61-06P | IXYS |
Category: Diode modules Description: Module: diode; double independent; 600V; If: 60Ax2; ECO-PAC 1; THT Max. off-state voltage: 0.6kV Load current: 60A x2 Max. forward impulse current: 0.55kA Electrical mounting: THT Max. forward voltage: 1.5V Case: ECO-PAC 1 Mechanical mounting: screw Max. load current: 60A Type of semiconductor module: diode Semiconductor structure: double independent |
на замовлення 22 шт: термін постачання 21-30 дні (днів) |
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VBE17-12NO7 | IXYS |
Category: Sing. ph. diode bridge rectif. - othersDescription: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 19A; Ifsm: 35A Type of bridge rectifier: single-phase Max. off-state voltage: 1.2kV Load current: 19A Max. forward impulse current: 35A Electrical mounting: THT Version: module Case: ECO-PAC 1 Mechanical mounting: screw Technology: FRED |
на замовлення 25 шт: термін постачання 21-30 дні (днів) |
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VBE26-12NO7 | IXYS |
Category: Sing. ph. diode bridge rectif. - othersDescription: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 32A; Ifsm: 75A Type of bridge rectifier: single-phase Max. off-state voltage: 1.2kV Load current: 32A Max. forward impulse current: 75A Electrical mounting: THT Mechanical mounting: screw Version: module Case: ECO-PAC 1 Technology: FRED |
на замовлення 20 шт: термін постачання 21-30 дні (днів) |
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VUE75-06NO7 | IXYS |
Category: Three phase diode bridge rectifiersDescription: Bridge rectifier: three-phase; Urmax: 600V; If: 86A; Ifsm: 215A; THT Type of bridge rectifier: three-phase Max. off-state voltage: 0.6kV Load current: 86A Max. forward impulse current: 215A Electrical mounting: THT Version: module Max. forward voltage: 1.57V Case: ECO-PAC 1 Mechanical mounting: screw Technology: FRED |
на замовлення 25 шт: термін постачання 21-30 дні (днів) |
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VBO54-08NO7 | IXYS |
Category: Sing. ph. diode bridge rectif. - othersDescription: Bridge rectifier: single-phase; Urmax: 800V; If: 55A; Ifsm: 300A Type of bridge rectifier: single-phase Max. off-state voltage: 0.8kV Load current: 55A Max. forward impulse current: 0.3kA Electrical mounting: THT Version: module Leads: wire Ø 1.5mm Case: ECO-PAC 1 Mechanical mounting: screw |
на замовлення 25 шт: термін постачання 21-30 дні (днів) |
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VBO68-08NO7 | IXYS |
Category: Sing. ph. diode bridge rectif. - othersDescription: Bridge rectifier: single-phase; Urmax: 800V; If: 70A; Ifsm: 550A Type of bridge rectifier: single-phase Max. off-state voltage: 0.8kV Load current: 70A Max. forward impulse current: 0.55kA Electrical mounting: THT Version: module Leads: wire Ø 0.75mm Case: ECO-PAC 1 Mechanical mounting: screw |
на замовлення 25 шт: термін постачання 21-30 дні (днів) |
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VBO54-16NO7 | IXYS |
Category: Sing. ph. diode bridge rectif. - othersDescription: Bridge rectifier: single-phase; Urmax: 1.6kV; If: 55A; Ifsm: 300A Type of bridge rectifier: single-phase Max. off-state voltage: 1.6kV Load current: 55A Max. forward impulse current: 0.3kA Electrical mounting: THT Version: module Leads: wire Ø 1.5mm Case: ECO-PAC 1 Mechanical mounting: screw |
на замовлення 23 шт: термін постачання 21-30 дні (днів) |
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VBO54-12NO7 | IXYS |
Category: Sing. ph. diode bridge rectif. - othersDescription: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 55A; Ifsm: 300A Type of bridge rectifier: single-phase Max. off-state voltage: 1.2kV Load current: 55A Max. forward impulse current: 0.3kA Electrical mounting: THT Version: module Leads: wire Ø 1.5mm Case: ECO-PAC 1 Mechanical mounting: screw |
на замовлення 14 шт: термін постачання 21-30 дні (днів) |
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VUE75-12NO7 | IXYS |
Category: Three phase diode bridge rectifiersDescription: Bridge rectifier: three-phase; Urmax: 1.2kV; If: 74A; Ifsm: 200A Type of bridge rectifier: three-phase Max. off-state voltage: 1.2kV Load current: 74A Max. forward impulse current: 200A Electrical mounting: THT Version: module Max. forward voltage: 2.71V Leads: wire Ø 1.5mm Case: ECO-PAC 1 Mechanical mounting: screw Technology: FRED |
на замовлення 20 шт: термін постачання 21-30 дні (днів) |
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VUO68-12NO7 | IXYS |
Category: Three phase diode bridge rectifiersDescription: Bridge rectifier: three-phase; Urmax: 1.2kV; If: 70A; Ifsm: 300A Type of bridge rectifier: three-phase Max. off-state voltage: 1.2kV Load current: 70A Max. forward impulse current: 0.3kA Electrical mounting: THT Version: module Max. forward voltage: 1.15V Leads: wire Ø 1.5mm Case: ECO-PAC 1 Mechanical mounting: screw |
на замовлення 14 шт: термін постачання 21-30 дні (днів) |
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VUO68-08NO7 | IXYS |
Category: Three phase diode bridge rectifiersDescription: Bridge rectifier: three-phase; Urmax: 800V; If: 70A; Ifsm: 300A; THT Type of bridge rectifier: three-phase Max. off-state voltage: 0.8kV Load current: 70A Max. forward impulse current: 0.3kA Electrical mounting: THT Version: module Max. forward voltage: 1.15V Leads: wire Ø 1.5mm Case: ECO-PAC 1 Mechanical mounting: screw |
на замовлення 13 шт: термін постачання 21-30 дні (днів) |
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CLA16E1200PN | IXYS |
Category: SMD/THT thyristorsDescription: Thyristor; 1.2kV; Ifmax: 16A; 10A; Igt: 50mA; TO220FP; THT; tube Max. off-state voltage: 1.2kV Load current: 10A Case: TO220FP Mounting: THT Max. load current: 16A Max. forward impulse current: 195A Kind of package: tube Type of thyristor: thyristor Gate current: 50mA |
на замовлення 113 шт: термін постачання 21-30 дні (днів) |
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CS45-16IO1R | IXYS |
Category: SMD/THT thyristorsDescription: Thyristor; 1.6kV; Ifmax: 71A; 45A; Igt: 80mA; TO247AD; THT; tube Type of thyristor: thyristor Max. off-state voltage: 1.6kV Max. load current: 71A Load current: 45A Gate current: 80mA Case: TO247AD Mounting: THT Kind of package: tube Max. forward impulse current: 520A |
на замовлення 274 шт: термін постачання 21-30 дні (днів) |
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CS45-16IO1 | IXYS |
Category: SMD/THT thyristorsDescription: Thyristor; 1600V; Ifmax: 71A; 45A; Igt: 80mA; TO247AD; THT; tube Type of thyristor: thyristor Max. off-state voltage: 1.6kV Max. load current: 71A Load current: 45A Gate current: 80mA Case: TO247AD Mounting: THT Kind of package: tube Max. forward impulse current: 520A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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IXTP140N055T2 | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 55V; 140A; 250W; TO220AB; 40ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 55V Drain current: 140A Power dissipation: 250W Case: TO220AB On-state resistance: 5.4mΩ Mounting: THT Gate charge: 82nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 40ns Features of semiconductor devices: thrench gate power mosfet |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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IXTT440N055T2 | IXYS |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 55V; 440A; 1000W; TO268; 76ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 55V Drain current: 440A Power dissipation: 1kW Case: TO268 On-state resistance: 1.8mΩ Mounting: SMD Gate charge: 405nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 76ns Features of semiconductor devices: thrench gate power mosfet |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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IXTH440N055T2 | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 55V; 440A; 1000W; TO247-3; 76ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 55V Drain current: 440A Power dissipation: 1kW Case: TO247-3 On-state resistance: 1.8mΩ Mounting: THT Gate charge: 405nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 76ns Features of semiconductor devices: thrench gate power mosfet |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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DSB60C30PB | IXYS |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 30V; 30Ax2; TO220AB; Ufmax: 0.49V Case: TO220AB Mounting: THT Type of diode: Schottky rectifying Heatsink thickness: 1.14...1.39mm Max. forward voltage: 0.49V Load current: 30A x2 Max. off-state voltage: 30V Max. forward impulse current: 530A Power dissipation: 145W Kind of package: tube Semiconductor structure: common cathode; double |
на замовлення 169 шт: термін постачання 21-30 дні (днів) |
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DSB60C45PB | IXYS |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 45V; 30Ax2; TO220AB; Ufmax: 0.6V Case: TO220AB Mounting: THT Type of diode: Schottky rectifying Heatsink thickness: 1.14...1.39mm Max. forward voltage: 0.6V Load current: 30A x2 Max. off-state voltage: 45V Max. forward impulse current: 490A Power dissipation: 145W Kind of package: tube Semiconductor structure: common cathode; double |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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DSB60C30HB | IXYS |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 30V; 30Ax2; TO247-3; Ufmax: 0.47V Case: TO247-3 Mounting: THT Type of diode: Schottky rectifying Max. forward voltage: 0.47V Load current: 30A x2 Max. off-state voltage: 30V Max. forward impulse current: 570A Power dissipation: 130W Kind of package: tube Semiconductor structure: common cathode; double |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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DSB60C60PB | IXYS |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 60V; 30Ax2; TO220AB; Ufmax: 0.69V Case: TO220AB Mounting: THT Type of diode: Schottky rectifying Heatsink thickness: 1.14...1.39mm Max. forward voltage: 0.69V Load current: 30A x2 Max. off-state voltage: 60V Max. forward impulse current: 490A Power dissipation: 145W Kind of package: tube Semiconductor structure: common cathode; double |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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CS60-14io1 | IXYS |
Category: SMD/THT thyristorsDescription: Thyristor; 1.4kV; Ifmax: 75A; 60A; Igt: 200mA; ISOPLUS247™; THT; tube Kind of package: tube Mounting: THT Case: ISOPLUS247™ Type of thyristor: thyristor Gate current: 200mA Max. forward impulse current: 1.4A Load current: 60A Max. load current: 75A Max. off-state voltage: 1.4kV |
на замовлення 30 шт: термін постачання 21-30 дні (днів) |
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IXTH110N25T | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 250V; 110A; 694W; TO247-3; 170ns Case: TO247-3 Kind of package: tube Features of semiconductor devices: thrench gate power mosfet Type of transistor: N-MOSFET Mounting: THT Polarisation: unipolar Gate charge: 157nC Reverse recovery time: 170ns On-state resistance: 26mΩ Drain current: 110A Drain-source voltage: 250V Power dissipation: 694W Kind of channel: enhancement |
на замовлення 10 шт: термін постачання 21-30 дні (днів) |
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IXFH110N15T2 | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 150V; 110A; 480W; TO247-3; 85ns Case: TO247-3 Kind of package: tube Features of semiconductor devices: thrench gate power mosfet Type of transistor: N-MOSFET Mounting: THT Polarisation: unipolar Gate charge: 150nC Reverse recovery time: 85ns On-state resistance: 13mΩ Drain current: 110A Drain-source voltage: 150V Power dissipation: 480W Kind of channel: enhancement |
на замовлення 286 шт: термін постачання 21-30 дні (днів) |
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IXTP110N055T2 | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 55V; 110A; 180W; TO220AB; 38ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 55V Drain current: 110A Power dissipation: 180W Case: TO220AB On-state resistance: 6.6mΩ Mounting: THT Gate charge: 57nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 38ns |
на замовлення 304 шт: термін постачання 21-30 дні (днів) |
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IXFA110N15T2 | IXYS |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 150V; 110A; 480W; TO263; 85ns Case: TO263 Kind of package: tube Features of semiconductor devices: thrench gate power mosfet Type of transistor: N-MOSFET Mounting: SMD Polarisation: unipolar Gate charge: 150nC Reverse recovery time: 85ns On-state resistance: 13mΩ Drain current: 110A Drain-source voltage: 150V Power dissipation: 480W Kind of channel: enhancement |
на замовлення 41 шт: термін постачання 21-30 дні (днів) |
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IXFH110N25T | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 250V; 110A; 694W; TO247-3 Case: TO247-3 Kind of package: tube Features of semiconductor devices: thrench gate power mosfet Type of transistor: N-MOSFET Mounting: THT Polarisation: unipolar Gate charge: 157nC On-state resistance: 26mΩ Drain current: 110A Drain-source voltage: 250V Power dissipation: 694W Kind of channel: enhancement |
на замовлення 256 шт: термін постачання 21-30 дні (днів) |
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VUB120-16NOX | IXYS |
Category: IGBT modulesDescription: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; 500W Topology: buck chopper; three-phase diode bridge Type of semiconductor module: IGBT Electrical mounting: Press-in PCB Mechanical mounting: screw Technology: X2PT Max. off-state voltage: 1.2kV Gate-emitter voltage: ±20V Collector current: 140A Pulsed collector current: 300A Power dissipation: 500W Case: V2-Pack Application: Inverter Semiconductor structure: diode/transistor |
на замовлення 1 шт: термін постачання 21-30 дні (днів) |
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LBB120 | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 170mA; OptoMOS Manufacturer series: OptoMOS Mounting: THT Kind of output: MOSFET Type of relay: solid state Contacts configuration: SPST-NC x2 Operating temperature: -40...85°C Turn-on time: 5ms Turn-off time: 5ms Body dimensions: 9.65x6.35x3.3mm Max. operating current: 0.17A Control current max.: 50mA On-state resistance: 20Ω Switched voltage: max. 250V AC; max. 250V DC Insulation voltage: 3.75kV Relay variant: 1-phase; current source Case: DIP8 |
на замовлення 99 шт: термін постачання 21-30 дні (днів) |
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LCB120S | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NC; Icntrl max: 50mA; 170mA; max.250VAC Manufacturer series: OptoMOS Mounting: SMT Kind of output: MOSFET Type of relay: solid state Contacts configuration: SPST-NC Operating temperature: -40...85°C Turn-on time: 5ms Turn-off time: 5ms Body dimensions: 8.38x6.35x3.3mm Max. operating current: 0.17A Control current max.: 50mA On-state resistance: 20Ω Switched voltage: max. 250V AC; max. 250V DC Insulation voltage: 3.75kV Relay variant: 1-phase; current source Case: DIP6 |
на замовлення 100 шт: термін постачання 21-30 дні (днів) |
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LBB120S | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 170mA; OptoMOS Manufacturer series: OptoMOS Mounting: SMT Kind of output: MOSFET Type of relay: solid state Contacts configuration: SPST-NC x2 Operating temperature: -40...85°C Turn-on time: 5ms Turn-off time: 5ms Body dimensions: 9.65x6.35x3.3mm Max. operating current: 0.17A Control current max.: 50mA On-state resistance: 20Ω Switched voltage: max. 250V AC; max. 250V DC Insulation voltage: 3.75kV Relay variant: 1-phase; current source Case: DIP8 |
на замовлення 60 шт: термін постачання 21-30 дні (днів) |
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IXTY3N50P | IXYS |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; Polar™; unipolar; 500V; 3A; 70W; TO252; 400ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 3A Power dissipation: 70W Case: TO252 Gate-source voltage: ±30V On-state resistance: 2Ω Mounting: SMD Kind of package: tube Kind of channel: enhancement Gate charge: 9.3nC Reverse recovery time: 400ns Technology: Polar™ |
на замовлення 34 шт: термін постачання 21-30 дні (днів) |
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FDM47-06KC5 | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; HiPerDynFRED; unipolar; 600V; 32A Type of transistor: N-MOSFET Technology: CoolMOS™; HiPerDynFRED; Multi-Chip Configurations Polarisation: unipolar Drain-source voltage: 600V Drain current: 32A Case: ISOPLUS i4-pac™ x024a Gate-source voltage: ±20V On-state resistance: 45mΩ Mounting: THT Gate charge: 150nC Kind of package: tube Kind of channel: enhancement Semiconductor structure: diode/transistor Features of semiconductor devices: super junction coolmos Topology: buck chopper |
на замовлення 19 шт: термін постачання 21-30 дні (днів) |
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IXTA80N10T | IXYS |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 80A; 230W; TO263; 100ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 80A Power dissipation: 230W Case: TO263 On-state resistance: 14mΩ Mounting: SMD Gate charge: 60nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 100ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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IXTP180N10T | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 180A; 480W; TO220AB; 72ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 180A Power dissipation: 480W Case: TO220AB On-state resistance: 6.4mΩ Mounting: THT Gate charge: 151nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 72ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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PM1204 | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; Icntrl max: 100mA; 500mA; max.400VAC; 1-phase Case: DIP6 Type of relay: solid state Mounting: THT Switching method: zero voltage switching Operating temperature: -40...85°C Body dimensions: 9.65x6.35x3.3mm Control current max.: 100mA Max. operating current: 0.5A Switched voltage: max. 400V AC Insulation voltage: 3.75kV Relay variant: 1-phase |
на замовлення 250 шт: термін постачання 21-30 дні (днів) |
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PM1205 | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; Icntrl max: 100mA; 500mA; max.500VAC; 1-phase Case: DIP6 Type of relay: solid state Mounting: THT Switching method: zero voltage switching Operating temperature: -40...85°C Body dimensions: 9.65x6.35x3.3mm Control current max.: 100mA Max. operating current: 0.5A Switched voltage: max. 500V AC Insulation voltage: 3.75kV Relay variant: 1-phase |
на замовлення 245 шт: термін постачання 21-30 дні (днів) |
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PM1205S | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; Icntrl max: 100mA; 500mA; max.500VAC; 1-phase Case: DIP6 Type of relay: solid state Mounting: SMT Switching method: zero voltage switching Operating temperature: -40...85°C Body dimensions: 9.65x6.35x3.3mm Control current max.: 100mA Max. operating current: 0.5A Switched voltage: max. 500V AC Insulation voltage: 3.75kV Relay variant: 1-phase |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
| PM1205STR | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; Icntrl max: 100mA; 500mA; max.500VAC; 1-phase Case: DIP6 Type of relay: solid state Mounting: SMT Switching method: zero voltage switching Operating temperature: -40...85°C Body dimensions: 9.65x6.35x3.3mm Control current max.: 100mA Max. operating current: 0.5A Switched voltage: max. 500V AC Insulation voltage: 3.75kV Relay variant: 1-phase |
товару немає в наявності |
В кошику од. на суму грн. |
| PLA134 |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 350mA; max.100VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Max. operating current: 350mA
Switched voltage: max. 100V AC; max. 100V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 3Ω
Mounting: THT
Case: DIP6
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 8.38x6.35x3.3mm
Control current max.: 50mA
Insulation voltage: 3.75kV
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 350mA; max.100VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Max. operating current: 350mA
Switched voltage: max. 100V AC; max. 100V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 3Ω
Mounting: THT
Case: DIP6
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 8.38x6.35x3.3mm
Control current max.: 50mA
Insulation voltage: 3.75kV
Kind of output: MOSFET
на замовлення 10 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1325.01 грн |
| CPC1511Y |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 450mA; max.230VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Max. operating current: 450mA
Switched voltage: max. 230V AC; max. 230V DC
Relay variant: 1-phase; current source
On-state resistance: 4Ω
Mounting: THT
Case: SIP4
Operating temperature: -40...85°C
Turn-on time: 4ms
Turn-off time: 2ms
Body dimensions: 21.08x10.16x3.3mm
Control current max.: 50mA
Insulation voltage: 3.75kV
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 450mA; max.230VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Max. operating current: 450mA
Switched voltage: max. 230V AC; max. 230V DC
Relay variant: 1-phase; current source
On-state resistance: 4Ω
Mounting: THT
Case: SIP4
Operating temperature: -40...85°C
Turn-on time: 4ms
Turn-off time: 2ms
Body dimensions: 21.08x10.16x3.3mm
Control current max.: 50mA
Insulation voltage: 3.75kV
Kind of output: MOSFET
на замовлення 210 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 347.78 грн |
| 10+ | 286.26 грн |
| 125+ | 259.95 грн |
| DMA50I800HA |
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 50A; tube; Ifsm: 500A; TO247-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.8kV
Load current: 50A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 0.5kA
Case: TO247-2
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 50A; tube; Ifsm: 500A; TO247-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.8kV
Load current: 50A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 0.5kA
Case: TO247-2
на замовлення 271 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 263.63 грн |
| 3+ | 220.08 грн |
| 10+ | 203.33 грн |
| 30+ | 194.56 грн |
| 120+ | 178.61 грн |
| DMA50I1200HA |
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 50A; tube; Ifsm: 500A; TO247-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 50A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 0.5kA
Case: TO247-2
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 50A; tube; Ifsm: 500A; TO247-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 50A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 0.5kA
Case: TO247-2
на замовлення 293 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 308.28 грн |
| 10+ | 247.99 грн |
| 30+ | 220.08 грн |
| 120+ | 186.59 грн |
| DMA50I1600HA |
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Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 50A; tube; Ifsm: 500A; TO247-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.6kV
Load current: 50A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 0.5kA
Case: TO247-2
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 50A; tube; Ifsm: 500A; TO247-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.6kV
Load current: 50A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 0.5kA
Case: TO247-2
на замовлення 54 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 298.83 грн |
| 3+ | 250.38 грн |
| 10+ | 220.88 грн |
| 30+ | 202.54 грн |
| IXFK32N80Q3 |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 32A; 1000W; TO264
Type of transistor: N-MOSFET
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Gate charge: 0.14µC
On-state resistance: 0.27Ω
Drain current: 32A
Power dissipation: 1kW
Drain-source voltage: 800V
Kind of channel: enhancement
Case: TO264
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 32A; 1000W; TO264
Type of transistor: N-MOSFET
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Gate charge: 0.14µC
On-state resistance: 0.27Ω
Drain current: 32A
Power dissipation: 1kW
Drain-source voltage: 800V
Kind of channel: enhancement
Case: TO264
на замовлення 22 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1344.76 грн |
| 3+ | 1105.17 грн |
| 10+ | 990.35 грн |
| IXTP80N10T |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 230W; TO220AB; 100ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80A
Power dissipation: 230W
Case: TO220AB
On-state resistance: 14mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 100ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 230W; TO220AB; 100ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80A
Power dissipation: 230W
Case: TO220AB
On-state resistance: 14mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 100ns
на замовлення 103 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 217.26 грн |
| 10+ | 166.65 грн |
| 50+ | 147.52 грн |
| 100+ | 138.74 грн |
| IXTP80N12T2 |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 80A; 325W; TO220AB; 90ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 80A
Power dissipation: 325W
Case: TO220AB
On-state resistance: 17mΩ
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 90ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 80A; 325W; TO220AB; 90ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 80A
Power dissipation: 325W
Case: TO220AB
On-state resistance: 17mΩ
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 90ns
товару немає в наявності
В кошику
од. на суму грн.
| MCC95-12io1B |
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Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 116A; TO240AA; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 116A
Case: TO240AA
Max. forward voltage: 1.29V
Max. forward impulse current: 2.25kA
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 116A; TO240AA; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 116A
Case: TO240AA
Max. forward voltage: 1.29V
Max. forward impulse current: 2.25kA
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
на замовлення 13 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 2506.61 грн |
| 3+ | 2176.86 грн |
| IXTK20N150 |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 20A; 1250W; TO264; 1.1us
Case: TO264
Mounting: THT
Type of transistor: N-MOSFET
Features of semiconductor devices: standard power mosfet
Polarisation: unipolar
Gate charge: 215nC
Reverse recovery time: 1.1µs
On-state resistance: 1Ω
Drain current: 20A
Power dissipation: 1.25kW
Drain-source voltage: 1.5kV
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 20A; 1250W; TO264; 1.1us
Case: TO264
Mounting: THT
Type of transistor: N-MOSFET
Features of semiconductor devices: standard power mosfet
Polarisation: unipolar
Gate charge: 215nC
Reverse recovery time: 1.1µs
On-state resistance: 1Ω
Drain current: 20A
Power dissipation: 1.25kW
Drain-source voltage: 1.5kV
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| IXTX20N150 |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 20A; 1250W; PLUS247™; 1.1us
Case: PLUS247™
Mounting: THT
Type of transistor: N-MOSFET
Features of semiconductor devices: standard power mosfet
Polarisation: unipolar
Gate charge: 215nC
Reverse recovery time: 1.1µs
On-state resistance: 1Ω
Drain current: 20A
Power dissipation: 1.25kW
Drain-source voltage: 1.5kV
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 20A; 1250W; PLUS247™; 1.1us
Case: PLUS247™
Mounting: THT
Type of transistor: N-MOSFET
Features of semiconductor devices: standard power mosfet
Polarisation: unipolar
Gate charge: 215nC
Reverse recovery time: 1.1µs
On-state resistance: 1Ω
Drain current: 20A
Power dissipation: 1.25kW
Drain-source voltage: 1.5kV
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| IXFK220N15P |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 220A; 1250W; TO264
Case: TO264
Mounting: THT
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 162nC
On-state resistance: 9mΩ
Drain current: 220A
Power dissipation: 1.25kW
Drain-source voltage: 150V
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 220A; 1250W; TO264
Case: TO264
Mounting: THT
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 162nC
On-state resistance: 9mΩ
Drain current: 220A
Power dissipation: 1.25kW
Drain-source voltage: 150V
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| IXTQ120N15P |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 150V; 120A; 600W; TO3P
Case: TO3P
Mounting: THT
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 150nC
Reverse recovery time: 150ns
On-state resistance: 16mΩ
Drain current: 120A
Power dissipation: 600W
Drain-source voltage: 150V
Kind of package: tube
Kind of channel: enhancement
Technology: PolarHT™
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 150V; 120A; 600W; TO3P
Case: TO3P
Mounting: THT
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 150nC
Reverse recovery time: 150ns
On-state resistance: 16mΩ
Drain current: 120A
Power dissipation: 600W
Drain-source voltage: 150V
Kind of package: tube
Kind of channel: enhancement
Technology: PolarHT™
товару немає в наявності
В кошику
од. на суму грн.
| IXFH160N15T2 |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 160A; 880W; TO247-3
Case: TO247-3
Mounting: THT
Features of semiconductor devices: thrench gate power mosfet
Type of transistor: N-MOSFET
Kind of channel: enhancement
Kind of package: tube
Polarisation: unipolar
Gate charge: 253nC
On-state resistance: 9mΩ
Drain current: 160A
Power dissipation: 880W
Drain-source voltage: 150V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 160A; 880W; TO247-3
Case: TO247-3
Mounting: THT
Features of semiconductor devices: thrench gate power mosfet
Type of transistor: N-MOSFET
Kind of channel: enhancement
Kind of package: tube
Polarisation: unipolar
Gate charge: 253nC
On-state resistance: 9mΩ
Drain current: 160A
Power dissipation: 880W
Drain-source voltage: 150V
на замовлення 285 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 553.88 грн |
| 30+ | 417.83 грн |
| IXFK360N15T2 |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 150V; 360A; 1670W; TO264
Case: TO264
Mounting: THT
Type of transistor: N-MOSFET
Kind of channel: enhancement
Kind of package: tube
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 715nC
Reverse recovery time: 150ns
On-state resistance: 4mΩ
Drain current: 360A
Power dissipation: 1.67kW
Drain-source voltage: 150V
Technology: GigaMOS™; HiPerFET™; TrenchT2™
Category: THT N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 150V; 360A; 1670W; TO264
Case: TO264
Mounting: THT
Type of transistor: N-MOSFET
Kind of channel: enhancement
Kind of package: tube
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 715nC
Reverse recovery time: 150ns
On-state resistance: 4mΩ
Drain current: 360A
Power dissipation: 1.67kW
Drain-source voltage: 150V
Technology: GigaMOS™; HiPerFET™; TrenchT2™
товару немає в наявності
В кошику
од. на суму грн.
| IXFN360N15T2 |
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Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 150V; 310A; SOT227B; screw; Idm: 900A
Case: SOT227B
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: single transistor
Type of semiconductor module: MOSFET transistor
Kind of channel: enhancement
Polarisation: unipolar
Gate-source voltage: ±30V
Gate charge: 715nC
Reverse recovery time: 150ns
On-state resistance: 4mΩ
Drain current: 310A
Power dissipation: 1.07kW
Drain-source voltage: 150V
Pulsed drain current: 900A
Technology: GigaMOS™; HiPerFET™; TrenchT2™
Category: Transistor modules MOSFET
Description: Module; single transistor; 150V; 310A; SOT227B; screw; Idm: 900A
Case: SOT227B
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: single transistor
Type of semiconductor module: MOSFET transistor
Kind of channel: enhancement
Polarisation: unipolar
Gate-source voltage: ±30V
Gate charge: 715nC
Reverse recovery time: 150ns
On-state resistance: 4mΩ
Drain current: 310A
Power dissipation: 1.07kW
Drain-source voltage: 150V
Pulsed drain current: 900A
Technology: GigaMOS™; HiPerFET™; TrenchT2™
товару немає в наявності
В кошику
од. на суму грн.
| IXFX360N15T2 |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 150V; 360A; 1670W; 150ns
Case: PLUS247™
Mounting: THT
Type of transistor: N-MOSFET
Kind of channel: enhancement
Kind of package: tube
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 715nC
Reverse recovery time: 150ns
On-state resistance: 4mΩ
Drain current: 360A
Power dissipation: 1.67kW
Drain-source voltage: 150V
Technology: GigaMOS™; HiPerFET™; TrenchT2™
Category: THT N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 150V; 360A; 1670W; 150ns
Case: PLUS247™
Mounting: THT
Type of transistor: N-MOSFET
Kind of channel: enhancement
Kind of package: tube
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 715nC
Reverse recovery time: 150ns
On-state resistance: 4mΩ
Drain current: 360A
Power dissipation: 1.67kW
Drain-source voltage: 150V
Technology: GigaMOS™; HiPerFET™; TrenchT2™
товару немає в наявності
В кошику
од. на суму грн.
| MMIX1H60N150V1 |
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Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.5kV; SMPD; SMD; 32kA
Type of thyristor: thyristor
Max. off-state voltage: 1.5kV
Case: SMPD
Mounting: SMD
Max. forward impulse current: 32kA
Features of semiconductor devices: freewheelling diode; MOS-gated thyristor (MGT)
Category: SMD/THT thyristors
Description: Thyristor; 1.5kV; SMPD; SMD; 32kA
Type of thyristor: thyristor
Max. off-state voltage: 1.5kV
Case: SMPD
Mounting: SMD
Max. forward impulse current: 32kA
Features of semiconductor devices: freewheelling diode; MOS-gated thyristor (MGT)
товару немає в наявності
В кошику
од. на суму грн.
| MMIX1F360N15T2 |
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 150V; 235A; Idm: 900A
Case: SMPD
Mounting: SMD
Type of transistor: N-MOSFET
Kind of channel: enhancement
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 715nC
Reverse recovery time: 150ns
On-state resistance: 4.4mΩ
Drain current: 235A
Power dissipation: 680W
Drain-source voltage: 150V
Pulsed drain current: 900A
Technology: GigaMOS™; HiPerFET™; TrenchT2™
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 150V; 235A; Idm: 900A
Case: SMPD
Mounting: SMD
Type of transistor: N-MOSFET
Kind of channel: enhancement
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 715nC
Reverse recovery time: 150ns
On-state resistance: 4.4mΩ
Drain current: 235A
Power dissipation: 680W
Drain-source voltage: 150V
Pulsed drain current: 900A
Technology: GigaMOS™; HiPerFET™; TrenchT2™
товару немає в наявності
В кошику
од. на суму грн.
| IXTA4N70X2 |
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Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 4A; Idm: 8A; 80W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 4A
Pulsed drain current: 8A
Power dissipation: 80W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 11.8nC
Kind of package: tube
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 4A; Idm: 8A; 80W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 4A
Pulsed drain current: 8A
Power dissipation: 80W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 11.8nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 38 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 145.12 грн |
| 10+ | 127.58 грн |
| CPC1025N |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.400VAC
Case: SOP4
On-state resistance: 30Ω
Turn-off time: 1ms
Turn-on time: 2ms
Body dimensions: 4.09x3.81x2.03mm
Control current max.: 50mA
Max. operating current: 120mA
Insulation voltage: 1.5kV
Relay variant: 1-phase; current source
Manufacturer series: OptoMOS
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Switched voltage: max. 400V AC; max. 400V DC
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.400VAC
Case: SOP4
On-state resistance: 30Ω
Turn-off time: 1ms
Turn-on time: 2ms
Body dimensions: 4.09x3.81x2.03mm
Control current max.: 50mA
Max. operating current: 120mA
Insulation voltage: 1.5kV
Relay variant: 1-phase; current source
Manufacturer series: OptoMOS
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Switched voltage: max. 400V AC; max. 400V DC
на замовлення 1 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 429.36 грн |
| DSEI2x61-06P |
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double independent; 600V; If: 60Ax2; ECO-PAC 1; THT
Max. off-state voltage: 0.6kV
Load current: 60A x2
Max. forward impulse current: 0.55kA
Electrical mounting: THT
Max. forward voltage: 1.5V
Case: ECO-PAC 1
Mechanical mounting: screw
Max. load current: 60A
Type of semiconductor module: diode
Semiconductor structure: double independent
Category: Diode modules
Description: Module: diode; double independent; 600V; If: 60Ax2; ECO-PAC 1; THT
Max. off-state voltage: 0.6kV
Load current: 60A x2
Max. forward impulse current: 0.55kA
Electrical mounting: THT
Max. forward voltage: 1.5V
Case: ECO-PAC 1
Mechanical mounting: screw
Max. load current: 60A
Type of semiconductor module: diode
Semiconductor structure: double independent
на замовлення 22 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1439.22 грн |
| 10+ | 1209.63 грн |
| VBE17-12NO7 |
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Виробник: IXYS
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 19A; Ifsm: 35A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.2kV
Load current: 19A
Max. forward impulse current: 35A
Electrical mounting: THT
Version: module
Case: ECO-PAC 1
Mechanical mounting: screw
Technology: FRED
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 19A; Ifsm: 35A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.2kV
Load current: 19A
Max. forward impulse current: 35A
Electrical mounting: THT
Version: module
Case: ECO-PAC 1
Mechanical mounting: screw
Technology: FRED
на замовлення 25 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1247.72 грн |
| 10+ | 953.67 грн |
| 25+ | 829.28 грн |
| VBE26-12NO7 |
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Виробник: IXYS
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 32A; Ifsm: 75A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.2kV
Load current: 32A
Max. forward impulse current: 75A
Electrical mounting: THT
Mechanical mounting: screw
Version: module
Case: ECO-PAC 1
Technology: FRED
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 32A; Ifsm: 75A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.2kV
Load current: 32A
Max. forward impulse current: 75A
Electrical mounting: THT
Mechanical mounting: screw
Version: module
Case: ECO-PAC 1
Technology: FRED
на замовлення 20 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1190.19 грн |
| 10+ | 907.42 грн |
| VUE75-06NO7 |
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Виробник: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 600V; If: 86A; Ifsm: 215A; THT
Type of bridge rectifier: three-phase
Max. off-state voltage: 0.6kV
Load current: 86A
Max. forward impulse current: 215A
Electrical mounting: THT
Version: module
Max. forward voltage: 1.57V
Case: ECO-PAC 1
Mechanical mounting: screw
Technology: FRED
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 600V; If: 86A; Ifsm: 215A; THT
Type of bridge rectifier: three-phase
Max. off-state voltage: 0.6kV
Load current: 86A
Max. forward impulse current: 215A
Electrical mounting: THT
Version: module
Max. forward voltage: 1.57V
Case: ECO-PAC 1
Mechanical mounting: screw
Technology: FRED
на замовлення 25 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1539.69 грн |
| 10+ | 1180.93 грн |
| 25+ | 1015.87 грн |
| VBO54-08NO7 |
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Виробник: IXYS
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 55A; Ifsm: 300A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 55A
Max. forward impulse current: 0.3kA
Electrical mounting: THT
Version: module
Leads: wire Ø 1.5mm
Case: ECO-PAC 1
Mechanical mounting: screw
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 55A; Ifsm: 300A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 55A
Max. forward impulse current: 0.3kA
Electrical mounting: THT
Version: module
Leads: wire Ø 1.5mm
Case: ECO-PAC 1
Mechanical mounting: screw
на замовлення 25 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1065.67 грн |
| 3+ | 873.93 грн |
| 10+ | 798.18 грн |
| VBO68-08NO7 |
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Виробник: IXYS
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 70A; Ifsm: 550A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 70A
Max. forward impulse current: 0.55kA
Electrical mounting: THT
Version: module
Leads: wire Ø 0.75mm
Case: ECO-PAC 1
Mechanical mounting: screw
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 70A; Ifsm: 550A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 70A
Max. forward impulse current: 0.55kA
Electrical mounting: THT
Version: module
Leads: wire Ø 0.75mm
Case: ECO-PAC 1
Mechanical mounting: screw
на замовлення 25 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1213.37 грн |
| 10+ | 926.56 грн |
| 25+ | 798.18 грн |
| VBO54-16NO7 |
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Виробник: IXYS
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1.6kV; If: 55A; Ifsm: 300A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.6kV
Load current: 55A
Max. forward impulse current: 0.3kA
Electrical mounting: THT
Version: module
Leads: wire Ø 1.5mm
Case: ECO-PAC 1
Mechanical mounting: screw
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1.6kV; If: 55A; Ifsm: 300A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.6kV
Load current: 55A
Max. forward impulse current: 0.3kA
Electrical mounting: THT
Version: module
Leads: wire Ø 1.5mm
Case: ECO-PAC 1
Mechanical mounting: screw
на замовлення 23 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1181.60 грн |
| 3+ | 956.86 грн |
| 10+ | 867.55 грн |
| VBO54-12NO7 |
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Виробник: IXYS
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 55A; Ifsm: 300A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.2kV
Load current: 55A
Max. forward impulse current: 0.3kA
Electrical mounting: THT
Version: module
Leads: wire Ø 1.5mm
Case: ECO-PAC 1
Mechanical mounting: screw
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 55A; Ifsm: 300A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.2kV
Load current: 55A
Max. forward impulse current: 0.3kA
Electrical mounting: THT
Version: module
Leads: wire Ø 1.5mm
Case: ECO-PAC 1
Mechanical mounting: screw
на замовлення 14 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1051.07 грн |
| 3+ | 861.17 грн |
| 10+ | 778.25 грн |
| VUE75-12NO7 |
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Виробник: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.2kV; If: 74A; Ifsm: 200A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.2kV
Load current: 74A
Max. forward impulse current: 200A
Electrical mounting: THT
Version: module
Max. forward voltage: 2.71V
Leads: wire Ø 1.5mm
Case: ECO-PAC 1
Mechanical mounting: screw
Technology: FRED
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.2kV; If: 74A; Ifsm: 200A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.2kV
Load current: 74A
Max. forward impulse current: 200A
Electrical mounting: THT
Version: module
Max. forward voltage: 2.71V
Leads: wire Ø 1.5mm
Case: ECO-PAC 1
Mechanical mounting: screw
Technology: FRED
на замовлення 20 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1592.93 грн |
| 10+ | 1302.13 грн |
| VUO68-12NO7 |
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Виробник: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.2kV; If: 70A; Ifsm: 300A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.2kV
Load current: 70A
Max. forward impulse current: 0.3kA
Electrical mounting: THT
Version: module
Max. forward voltage: 1.15V
Leads: wire Ø 1.5mm
Case: ECO-PAC 1
Mechanical mounting: screw
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.2kV; If: 70A; Ifsm: 300A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.2kV
Load current: 70A
Max. forward impulse current: 0.3kA
Electrical mounting: THT
Version: module
Max. forward voltage: 1.15V
Leads: wire Ø 1.5mm
Case: ECO-PAC 1
Mechanical mounting: screw
на замовлення 14 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1144.68 грн |
| 3+ | 967.23 грн |
| 5+ | 900.25 грн |
| 10+ | 839.65 грн |
| VUO68-08NO7 |
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Виробник: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 800V; If: 70A; Ifsm: 300A; THT
Type of bridge rectifier: three-phase
Max. off-state voltage: 0.8kV
Load current: 70A
Max. forward impulse current: 0.3kA
Electrical mounting: THT
Version: module
Max. forward voltage: 1.15V
Leads: wire Ø 1.5mm
Case: ECO-PAC 1
Mechanical mounting: screw
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 800V; If: 70A; Ifsm: 300A; THT
Type of bridge rectifier: three-phase
Max. off-state voltage: 0.8kV
Load current: 70A
Max. forward impulse current: 0.3kA
Electrical mounting: THT
Version: module
Max. forward voltage: 1.15V
Leads: wire Ø 1.5mm
Case: ECO-PAC 1
Mechanical mounting: screw
на замовлення 13 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1144.68 грн |
| 10+ | 839.65 грн |
| CLA16E1200PN |
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Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 16A; 10A; Igt: 50mA; TO220FP; THT; tube
Max. off-state voltage: 1.2kV
Load current: 10A
Case: TO220FP
Mounting: THT
Max. load current: 16A
Max. forward impulse current: 195A
Kind of package: tube
Type of thyristor: thyristor
Gate current: 50mA
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 16A; 10A; Igt: 50mA; TO220FP; THT; tube
Max. off-state voltage: 1.2kV
Load current: 10A
Case: TO220FP
Mounting: THT
Max. load current: 16A
Max. forward impulse current: 195A
Kind of package: tube
Type of thyristor: thyristor
Gate current: 50mA
на замовлення 113 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 242.16 грн |
| 10+ | 123.59 грн |
| 50+ | 113.23 грн |
| 100+ | 109.24 грн |
| CS45-16IO1R |
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Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.6kV; Ifmax: 71A; 45A; Igt: 80mA; TO247AD; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 1.6kV
Max. load current: 71A
Load current: 45A
Gate current: 80mA
Case: TO247AD
Mounting: THT
Kind of package: tube
Max. forward impulse current: 520A
Category: SMD/THT thyristors
Description: Thyristor; 1.6kV; Ifmax: 71A; 45A; Igt: 80mA; TO247AD; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 1.6kV
Max. load current: 71A
Load current: 45A
Gate current: 80mA
Case: TO247AD
Mounting: THT
Kind of package: tube
Max. forward impulse current: 520A
на замовлення 274 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 577.92 грн |
| 5+ | 425.01 грн |
| 10+ | 377.96 грн |
| 30+ | 369.99 грн |
| CS45-16IO1 | ![]() |
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Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1600V; Ifmax: 71A; 45A; Igt: 80mA; TO247AD; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 1.6kV
Max. load current: 71A
Load current: 45A
Gate current: 80mA
Case: TO247AD
Mounting: THT
Kind of package: tube
Max. forward impulse current: 520A
Category: SMD/THT thyristors
Description: Thyristor; 1600V; Ifmax: 71A; 45A; Igt: 80mA; TO247AD; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 1.6kV
Max. load current: 71A
Load current: 45A
Gate current: 80mA
Case: TO247AD
Mounting: THT
Kind of package: tube
Max. forward impulse current: 520A
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| IXTP140N055T2 |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 140A; 250W; TO220AB; 40ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 140A
Power dissipation: 250W
Case: TO220AB
On-state resistance: 5.4mΩ
Mounting: THT
Gate charge: 82nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 40ns
Features of semiconductor devices: thrench gate power mosfet
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 140A; 250W; TO220AB; 40ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 140A
Power dissipation: 250W
Case: TO220AB
On-state resistance: 5.4mΩ
Mounting: THT
Gate charge: 82nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 40ns
Features of semiconductor devices: thrench gate power mosfet
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| IXTT440N055T2 |
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Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 440A; 1000W; TO268; 76ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 440A
Power dissipation: 1kW
Case: TO268
On-state resistance: 1.8mΩ
Mounting: SMD
Gate charge: 405nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 76ns
Features of semiconductor devices: thrench gate power mosfet
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 440A; 1000W; TO268; 76ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 440A
Power dissipation: 1kW
Case: TO268
On-state resistance: 1.8mΩ
Mounting: SMD
Gate charge: 405nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 76ns
Features of semiconductor devices: thrench gate power mosfet
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| IXTH440N055T2 |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 440A; 1000W; TO247-3; 76ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 440A
Power dissipation: 1kW
Case: TO247-3
On-state resistance: 1.8mΩ
Mounting: THT
Gate charge: 405nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 76ns
Features of semiconductor devices: thrench gate power mosfet
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 440A; 1000W; TO247-3; 76ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 440A
Power dissipation: 1kW
Case: TO247-3
On-state resistance: 1.8mΩ
Mounting: THT
Gate charge: 405nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 76ns
Features of semiconductor devices: thrench gate power mosfet
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| DSB60C30PB |
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Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 30V; 30Ax2; TO220AB; Ufmax: 0.49V
Case: TO220AB
Mounting: THT
Type of diode: Schottky rectifying
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 0.49V
Load current: 30A x2
Max. off-state voltage: 30V
Max. forward impulse current: 530A
Power dissipation: 145W
Kind of package: tube
Semiconductor structure: common cathode; double
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 30V; 30Ax2; TO220AB; Ufmax: 0.49V
Case: TO220AB
Mounting: THT
Type of diode: Schottky rectifying
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 0.49V
Load current: 30A x2
Max. off-state voltage: 30V
Max. forward impulse current: 530A
Power dissipation: 145W
Kind of package: tube
Semiconductor structure: common cathode; double
на замовлення 169 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 107.34 грн |
| 5+ | 89.31 грн |
| 10+ | 78.94 грн |
| 50+ | 70.97 грн |
| DSB60C45PB |
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Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 30Ax2; TO220AB; Ufmax: 0.6V
Case: TO220AB
Mounting: THT
Type of diode: Schottky rectifying
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 0.6V
Load current: 30A x2
Max. off-state voltage: 45V
Max. forward impulse current: 490A
Power dissipation: 145W
Kind of package: tube
Semiconductor structure: common cathode; double
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 30Ax2; TO220AB; Ufmax: 0.6V
Case: TO220AB
Mounting: THT
Type of diode: Schottky rectifying
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 0.6V
Load current: 30A x2
Max. off-state voltage: 45V
Max. forward impulse current: 490A
Power dissipation: 145W
Kind of package: tube
Semiconductor structure: common cathode; double
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| DSB60C30HB |
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Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 30V; 30Ax2; TO247-3; Ufmax: 0.47V
Case: TO247-3
Mounting: THT
Type of diode: Schottky rectifying
Max. forward voltage: 0.47V
Load current: 30A x2
Max. off-state voltage: 30V
Max. forward impulse current: 570A
Power dissipation: 130W
Kind of package: tube
Semiconductor structure: common cathode; double
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 30V; 30Ax2; TO247-3; Ufmax: 0.47V
Case: TO247-3
Mounting: THT
Type of diode: Schottky rectifying
Max. forward voltage: 0.47V
Load current: 30A x2
Max. off-state voltage: 30V
Max. forward impulse current: 570A
Power dissipation: 130W
Kind of package: tube
Semiconductor structure: common cathode; double
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| DSB60C60PB |
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Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 30Ax2; TO220AB; Ufmax: 0.69V
Case: TO220AB
Mounting: THT
Type of diode: Schottky rectifying
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 0.69V
Load current: 30A x2
Max. off-state voltage: 60V
Max. forward impulse current: 490A
Power dissipation: 145W
Kind of package: tube
Semiconductor structure: common cathode; double
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 30Ax2; TO220AB; Ufmax: 0.69V
Case: TO220AB
Mounting: THT
Type of diode: Schottky rectifying
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 0.69V
Load current: 30A x2
Max. off-state voltage: 60V
Max. forward impulse current: 490A
Power dissipation: 145W
Kind of package: tube
Semiconductor structure: common cathode; double
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| CS60-14io1 |
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Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.4kV; Ifmax: 75A; 60A; Igt: 200mA; ISOPLUS247™; THT; tube
Kind of package: tube
Mounting: THT
Case: ISOPLUS247™
Type of thyristor: thyristor
Gate current: 200mA
Max. forward impulse current: 1.4A
Load current: 60A
Max. load current: 75A
Max. off-state voltage: 1.4kV
Category: SMD/THT thyristors
Description: Thyristor; 1.4kV; Ifmax: 75A; 60A; Igt: 200mA; ISOPLUS247™; THT; tube
Kind of package: tube
Mounting: THT
Case: ISOPLUS247™
Type of thyristor: thyristor
Gate current: 200mA
Max. forward impulse current: 1.4A
Load current: 60A
Max. load current: 75A
Max. off-state voltage: 1.4kV
на замовлення 30 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1275.20 грн |
| 3+ | 1047.76 грн |
| 10+ | 940.12 грн |
| 30+ | 907.42 грн |
| IXTH110N25T |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 110A; 694W; TO247-3; 170ns
Case: TO247-3
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Type of transistor: N-MOSFET
Mounting: THT
Polarisation: unipolar
Gate charge: 157nC
Reverse recovery time: 170ns
On-state resistance: 26mΩ
Drain current: 110A
Drain-source voltage: 250V
Power dissipation: 694W
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 110A; 694W; TO247-3; 170ns
Case: TO247-3
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Type of transistor: N-MOSFET
Mounting: THT
Polarisation: unipolar
Gate charge: 157nC
Reverse recovery time: 170ns
On-state resistance: 26mΩ
Drain current: 110A
Drain-source voltage: 250V
Power dissipation: 694W
Kind of channel: enhancement
на замовлення 10 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 648.33 грн |
| IXFH110N15T2 |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 110A; 480W; TO247-3; 85ns
Case: TO247-3
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Type of transistor: N-MOSFET
Mounting: THT
Polarisation: unipolar
Gate charge: 150nC
Reverse recovery time: 85ns
On-state resistance: 13mΩ
Drain current: 110A
Drain-source voltage: 150V
Power dissipation: 480W
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 110A; 480W; TO247-3; 85ns
Case: TO247-3
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Type of transistor: N-MOSFET
Mounting: THT
Polarisation: unipolar
Gate charge: 150nC
Reverse recovery time: 85ns
On-state resistance: 13mΩ
Drain current: 110A
Drain-source voltage: 150V
Power dissipation: 480W
Kind of channel: enhancement
на замовлення 286 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 453.40 грн |
| 3+ | 377.96 грн |
| 10+ | 372.38 грн |
| IXTP110N055T2 |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 110A; 180W; TO220AB; 38ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 110A
Power dissipation: 180W
Case: TO220AB
On-state resistance: 6.6mΩ
Mounting: THT
Gate charge: 57nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 38ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 110A; 180W; TO220AB; 38ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 110A
Power dissipation: 180W
Case: TO220AB
On-state resistance: 6.6mΩ
Mounting: THT
Gate charge: 57nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 38ns
на замовлення 304 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 171.44 грн |
| 10+ | 134.76 грн |
| 50+ | 114.82 грн |
| IXFA110N15T2 |
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Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 110A; 480W; TO263; 85ns
Case: TO263
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 150nC
Reverse recovery time: 85ns
On-state resistance: 13mΩ
Drain current: 110A
Drain-source voltage: 150V
Power dissipation: 480W
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 110A; 480W; TO263; 85ns
Case: TO263
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 150nC
Reverse recovery time: 85ns
On-state resistance: 13mΩ
Drain current: 110A
Drain-source voltage: 150V
Power dissipation: 480W
Kind of channel: enhancement
на замовлення 41 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 447.39 грн |
| IXFH110N25T |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 110A; 694W; TO247-3
Case: TO247-3
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Type of transistor: N-MOSFET
Mounting: THT
Polarisation: unipolar
Gate charge: 157nC
On-state resistance: 26mΩ
Drain current: 110A
Drain-source voltage: 250V
Power dissipation: 694W
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 110A; 694W; TO247-3
Case: TO247-3
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Type of transistor: N-MOSFET
Mounting: THT
Polarisation: unipolar
Gate charge: 157nC
On-state resistance: 26mΩ
Drain current: 110A
Drain-source voltage: 250V
Power dissipation: 694W
Kind of channel: enhancement
на замовлення 256 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 698.14 грн |
| 10+ | 534.25 грн |
| 30+ | 434.57 грн |
| VUB120-16NOX |
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Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; 500W
Topology: buck chopper; three-phase diode bridge
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: X2PT
Max. off-state voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 140A
Pulsed collector current: 300A
Power dissipation: 500W
Case: V2-Pack
Application: Inverter
Semiconductor structure: diode/transistor
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; 500W
Topology: buck chopper; three-phase diode bridge
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: X2PT
Max. off-state voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 140A
Pulsed collector current: 300A
Power dissipation: 500W
Case: V2-Pack
Application: Inverter
Semiconductor structure: diode/transistor
на замовлення 1 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 6020.49 грн |
| LBB120 |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 170mA; OptoMOS
Manufacturer series: OptoMOS
Mounting: THT
Kind of output: MOSFET
Type of relay: solid state
Contacts configuration: SPST-NC x2
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 9.65x6.35x3.3mm
Max. operating current: 0.17A
Control current max.: 50mA
On-state resistance: 20Ω
Switched voltage: max. 250V AC; max. 250V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP8
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 170mA; OptoMOS
Manufacturer series: OptoMOS
Mounting: THT
Kind of output: MOSFET
Type of relay: solid state
Contacts configuration: SPST-NC x2
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 9.65x6.35x3.3mm
Max. operating current: 0.17A
Control current max.: 50mA
On-state resistance: 20Ω
Switched voltage: max. 250V AC; max. 250V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP8
на замовлення 99 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 420.77 грн |
| 10+ | 317.36 грн |
| LCB120S |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 170mA; max.250VAC
Manufacturer series: OptoMOS
Mounting: SMT
Kind of output: MOSFET
Type of relay: solid state
Contacts configuration: SPST-NC
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 8.38x6.35x3.3mm
Max. operating current: 0.17A
Control current max.: 50mA
On-state resistance: 20Ω
Switched voltage: max. 250V AC; max. 250V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP6
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 170mA; max.250VAC
Manufacturer series: OptoMOS
Mounting: SMT
Kind of output: MOSFET
Type of relay: solid state
Contacts configuration: SPST-NC
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 8.38x6.35x3.3mm
Max. operating current: 0.17A
Control current max.: 50mA
On-state resistance: 20Ω
Switched voltage: max. 250V AC; max. 250V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP6
на замовлення 100 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 254.18 грн |
| 10+ | 175.42 грн |
| LBB120S |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 170mA; OptoMOS
Manufacturer series: OptoMOS
Mounting: SMT
Kind of output: MOSFET
Type of relay: solid state
Contacts configuration: SPST-NC x2
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 9.65x6.35x3.3mm
Max. operating current: 0.17A
Control current max.: 50mA
On-state resistance: 20Ω
Switched voltage: max. 250V AC; max. 250V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP8
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 170mA; OptoMOS
Manufacturer series: OptoMOS
Mounting: SMT
Kind of output: MOSFET
Type of relay: solid state
Contacts configuration: SPST-NC x2
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 9.65x6.35x3.3mm
Max. operating current: 0.17A
Control current max.: 50mA
On-state resistance: 20Ω
Switched voltage: max. 250V AC; max. 250V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP8
на замовлення 60 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 625.15 грн |
| 50+ | 476.84 грн |
| IXTY3N50P |
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Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 3A; 70W; TO252; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3A
Power dissipation: 70W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Gate charge: 9.3nC
Reverse recovery time: 400ns
Technology: Polar™
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 3A; 70W; TO252; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3A
Power dissipation: 70W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Gate charge: 9.3nC
Reverse recovery time: 400ns
Technology: Polar™
на замовлення 34 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 26.62 грн |
| FDM47-06KC5 |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; HiPerDynFRED; unipolar; 600V; 32A
Type of transistor: N-MOSFET
Technology: CoolMOS™; HiPerDynFRED; Multi-Chip Configurations
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 32A
Case: ISOPLUS i4-pac™ x024a
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Semiconductor structure: diode/transistor
Features of semiconductor devices: super junction coolmos
Topology: buck chopper
Category: THT N channel transistors
Description: Transistor: N-MOSFET; HiPerDynFRED; unipolar; 600V; 32A
Type of transistor: N-MOSFET
Technology: CoolMOS™; HiPerDynFRED; Multi-Chip Configurations
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 32A
Case: ISOPLUS i4-pac™ x024a
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Semiconductor structure: diode/transistor
Features of semiconductor devices: super junction coolmos
Topology: buck chopper
на замовлення 19 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 670.66 грн |
| 3+ | 594.05 грн |
| 10+ | 572.52 грн |
| IXTA80N10T |
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Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 230W; TO263; 100ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80A
Power dissipation: 230W
Case: TO263
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 100ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 230W; TO263; 100ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80A
Power dissipation: 230W
Case: TO263
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 100ns
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| IXTP180N10T |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 480W; TO220AB; 72ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 480W
Case: TO220AB
On-state resistance: 6.4mΩ
Mounting: THT
Gate charge: 151nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 72ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 480W; TO220AB; 72ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 480W
Case: TO220AB
On-state resistance: 6.4mΩ
Mounting: THT
Gate charge: 151nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 72ns
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| PM1204 |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.400VAC; 1-phase
Case: DIP6
Type of relay: solid state
Mounting: THT
Switching method: zero voltage switching
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 100mA
Max. operating current: 0.5A
Switched voltage: max. 400V AC
Insulation voltage: 3.75kV
Relay variant: 1-phase
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.400VAC; 1-phase
Case: DIP6
Type of relay: solid state
Mounting: THT
Switching method: zero voltage switching
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 100mA
Max. operating current: 0.5A
Switched voltage: max. 400V AC
Insulation voltage: 3.75kV
Relay variant: 1-phase
на замовлення 250 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 509.22 грн |
| 10+ | 346.06 грн |
| 50+ | 288.65 грн |
| 100+ | 277.49 грн |
| PM1205 |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.500VAC; 1-phase
Case: DIP6
Type of relay: solid state
Mounting: THT
Switching method: zero voltage switching
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 100mA
Max. operating current: 0.5A
Switched voltage: max. 500V AC
Insulation voltage: 3.75kV
Relay variant: 1-phase
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.500VAC; 1-phase
Case: DIP6
Type of relay: solid state
Mounting: THT
Switching method: zero voltage switching
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 100mA
Max. operating current: 0.5A
Switched voltage: max. 500V AC
Insulation voltage: 3.75kV
Relay variant: 1-phase
на замовлення 245 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 359.80 грн |
| 10+ | 279.88 грн |
| 100+ | 272.71 грн |
| PM1205S |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.500VAC; 1-phase
Case: DIP6
Type of relay: solid state
Mounting: SMT
Switching method: zero voltage switching
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 100mA
Max. operating current: 0.5A
Switched voltage: max. 500V AC
Insulation voltage: 3.75kV
Relay variant: 1-phase
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.500VAC; 1-phase
Case: DIP6
Type of relay: solid state
Mounting: SMT
Switching method: zero voltage switching
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 100mA
Max. operating current: 0.5A
Switched voltage: max. 500V AC
Insulation voltage: 3.75kV
Relay variant: 1-phase
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| PM1205STR |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.500VAC; 1-phase
Case: DIP6
Type of relay: solid state
Mounting: SMT
Switching method: zero voltage switching
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 100mA
Max. operating current: 0.5A
Switched voltage: max. 500V AC
Insulation voltage: 3.75kV
Relay variant: 1-phase
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.500VAC; 1-phase
Case: DIP6
Type of relay: solid state
Mounting: SMT
Switching method: zero voltage switching
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 100mA
Max. operating current: 0.5A
Switched voltage: max. 500V AC
Insulation voltage: 3.75kV
Relay variant: 1-phase
товару немає в наявності
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од. на суму грн.







































