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IXTH8P50 IXTH8P50 IXYS IXT_8P50.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -500V; -8A; 180W; TO247-3; 400ns
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -500V
Drain current: -8A
Power dissipation: 180W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: THT
Gate charge: 130nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 400ns
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IXTH20P50P IXTH20P50P IXYS IXT_20P50P.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -500V; -20A; 460W; TO247-3
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -500V
Drain current: -20A
Power dissipation: 460W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.45Ω
Mounting: THT
Gate charge: 103nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 406ns
Technology: PolarP™
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IXTH10P50P IXTH10P50P IXYS IXT_10P50P.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -500V; -10A; 300W; TO247-3
Power dissipation: 300W
Gate charge: 50nC
Polarisation: unipolar
Technology: PolarP™
Drain current: -10A
Kind of channel: enhancement
Drain-source voltage: -500V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO247-3
On-state resistance: 1Ω
Reverse recovery time: 414ns
Mounting: THT
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IXTH90P10P IXTH90P10P IXYS IXT_90P10P.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -100V; -90A; 462W; TO247-3
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -90A
Power dissipation: 462W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 144ns
Technology: PolarP™
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IXTH16N20D2 IXTH16N20D2 IXYS IXTH(T)16N20D2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 16A; 695W; TO247-3; 607ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 16A
Power dissipation: 695W
Case: TO247-3
On-state resistance: 80mΩ
Mounting: THT
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 607ns
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IXTH88N30P IXTH88N30P IXYS IXTH88N30P-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 300V; 88A; 600W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 88A
Power dissipation: 600W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Technology: PolarHT™
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IXTH88N15 IXTH88N15 IXYS IXTH88N15.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 88A; 400W; TO247-3; 150ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 88A
Power dissipation: 400W
Case: TO247-3
On-state resistance: 22mΩ
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
Features of semiconductor devices: standard power mosfet
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IXTH10P60 IXTH10P60 IXYS IXT_10P60.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -600V; -10A; 300W; TO247-3; 500ns
Power dissipation: 300W
Gate charge: 135nC
Polarisation: unipolar
Drain current: -10A
Kind of channel: enhancement
Drain-source voltage: -600V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO247-3
On-state resistance: 1Ω
Reverse recovery time: 0.5µs
Mounting: THT
товару немає в наявності
 Мінімальне замовлення: 300 шт
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IXTP08N100D2 IXTP08N100D2 IXYS IXTA(P,Y)08N100D2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.8A; 60W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 0.8A
Power dissipation: 60W
Case: TO220AB
On-state resistance: 21Ω
Mounting: THT
Kind of package: tube
Kind of channel: depletion
Gate charge: 325nC
на замовлення 9 шт:
термін постачання 14-30 дні (днів)
2+281.61 грн
8+135.84 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IXTA08N100D2 IXTA08N100D2 IXYS IXTA(P,Y)08N100D2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.8A; 60W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 0.8A
Power dissipation: 60W
Case: TO263
On-state resistance: 21Ω
Mounting: SMD
Kind of package: tube
Kind of channel: depletion
Gate charge: 325nC
на замовлення 300 шт:
термін постачання 14-30 дні (днів)
2+321.84 грн
7+138.39 грн
20+130.75 грн
250+125.65 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
CPC3708CTR CPC3708CTR IXYS CPC3708.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 350V; 0.13A; 1.8W; SOT89
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 350V
Drain current: 0.13A
Power dissipation: 1.8W
Case: SOT89
Gate-source voltage: ±20V
On-state resistance: 8Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
на замовлення 2267 шт:
термін постачання 14-30 дні (днів)
8+62.17 грн
12+37.19 грн
33+29.29 грн
91+27.68 грн
1000+26.57 грн
Мінімальне замовлення: 8 шт
В кошику  од. на суму  грн.
CPC3708ZTR CPC3708ZTR IXYS CPC3708.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 350V; 0.13A; 2.5W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 350V
Drain current: 0.13A
Power dissipation: 2.5W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 8Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
на замовлення 691 шт:
термін постачання 14-30 дні (днів)
9+55.77 грн
13+34.98 грн
54+17.91 грн
149+16.98 грн
Мінімальне замовлення: 9 шт
В кошику  од. на суму  грн.
CPC3720CTR CPC3720CTR IXYS CPC3720.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 350V; 0.13A; 1.4W; SOT89
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 350V
Drain current: 0.13A
Power dissipation: 1.4W
Case: SOT89
Gate-source voltage: ±15V
On-state resistance: 22Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
на замовлення 12 шт:
термін постачання 14-30 дні (днів)
11+44.80 грн
12+35.66 грн
Мінімальне замовлення: 11 шт
В кошику  од. на суму  грн.
IXTA10P50P IXTA10P50P IXYS IXT_10P50P.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -500V; -10A; 300W; TO263
Type of transistor: P-MOSFET
Technology: PolarP™
Polarisation: unipolar
Drain-source voltage: -500V
Drain current: -10A
Power dissipation: 300W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 1Ω
Mounting: SMD
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 414ns
на замовлення 40 шт:
термін постачання 14-30 дні (днів)
2+445.28 грн
3+324.32 грн
9+306.50 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IXTA96P085T IXTA96P085T IXYS IXTA96P085T-dte.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -85V; -96A; 298W; TO263
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -85V
Drain current: -96A
Power dissipation: 298W
Case: TO263
Gate-source voltage: ±15V
On-state resistance: 13mΩ
Mounting: SMD
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 55ns
на замовлення 107 шт:
термін постачання 14-30 дні (днів)
1+642.77 грн
4+307.34 грн
9+290.36 грн
В кошику  од. на суму  грн.
IXTA32P05T IXTA32P05T IXYS IXT_32P05T.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -32A; 83W; TO263
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -32A
Power dissipation: 83W
Case: TO263
Gate-source voltage: ±15V
On-state resistance: 39mΩ
Mounting: SMD
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 26ns
на замовлення 294 шт:
термін постачання 14-30 дні (днів)
2+307.21 грн
9+120.56 грн
23+113.77 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IXTA36N30P IXTA36N30P IXYS IXTA36N30P-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 300V; 36A; 300W; TO263
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 36A
Power dissipation: 300W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
на замовлення 193 шт:
термін постачання 14-30 дні (днів)
2+395.90 грн
5+238.57 грн
10+223.29 грн
50+219.90 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IXTA52P10P IXTA52P10P IXYS IXT_52P10P.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -100V; -52A; 300W; TO263
Type of transistor: P-MOSFET
Technology: PolarP™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -52A
Power dissipation: 300W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 120ns
на замовлення 300 шт:
термін постачання 14-30 дні (днів)
1+542.20 грн
3+355.74 грн
8+336.21 грн
150+329.42 грн
В кошику  од. на суму  грн.
IXTA28P065T IXTA28P065T IXYS IXT_28P065T.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -65V; -28A; 83W; TO263
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -65V
Drain current: -28A
Power dissipation: 83W
Case: TO263
Gate-source voltage: ±15V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 31ns
на замовлення 198 шт:
термін постачання 14-30 дні (днів)
2+351.10 грн
8+130.75 грн
21+123.11 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IXTA2N100P IXTA2N100P IXYS IXTA(P,Y)2N100P.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 2A; 86W; TO263; 800ns
Mounting: SMD
Kind of package: tube
Type of transistor: N-MOSFET
Case: TO263
Reverse recovery time: 800ns
Power dissipation: 86W
Polarisation: unipolar
Features of semiconductor devices: standard power mosfet
Drain current: 2A
Kind of channel: enhancement
Drain-source voltage: 1kV
на замовлення 293 шт:
термін постачання 14-30 дні (днів)
3+168.11 грн
7+156.22 грн
10+151.97 грн
17+147.73 грн
50+142.63 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
IXTA4N70X2 IXTA4N70X2 IXYS ixty2n65x2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 4A; Idm: 8A; 80W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 4A
Power dissipation: 80W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 11.8nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 8A
на замовлення 38 шт:
термін постачання 14-30 дні (днів)
3+154.52 грн
9+112.07 грн
24+106.13 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
IXTA3N50P IXTA3N50P IXYS IXTA3N50P-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 3A; 70W; TO263; 400ns
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3A
Power dissipation: 70W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 9.3nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 400ns
на замовлення 8 шт:
термін постачання 14-30 дні (днів)
7+75.89 грн
Мінімальне замовлення: 7 шт
В кошику  од. на суму  грн.
IXTA340N04T4-7 IXTA340N04T4-7 IXYS IXTA340N04T4.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 340A; 480W; TO263-7; 43ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 340A
Power dissipation: 480W
Case: TO263-7
On-state resistance: 1.7mΩ
Mounting: SMD
Gate charge: 256nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 43ns
Features of semiconductor devices: thrench gate power mosfet
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IXTA10P50P-TRL IXTA10P50P-TRL IXYS littelfuse-discrete-mosfets-ixt-10p50p-datasheet?assetguid=02d9f7f4-854a-4f4b-b3f3-dc66c452f634 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; 10A; 300W; D2PAK
Type of transistor: P-MOSFET
Drain current: 10A
Power dissipation: 300W
Case: D2PAK
Gate-source voltage: 20V
On-state resistance: 1Ω
Mounting: SMD
Kind of channel: enhancement
товару немає в наявності
 Мінімальне замовлення: 800 шт
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IXTA1N170DHV IXTA1N170DHV IXYS IXTA(H)1N170DHV.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.7kV; 1A; 290W; TO263HV; 30ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.7kV
Drain current: 1A
Power dissipation: 290W
Case: TO263HV
On-state resistance: 16Ω
Mounting: SMD
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 30ns
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IXTA1N200P3HV IXTA1N200P3HV IXYS IXTA(H)1N200P3HV.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 2kV; 1A; 125W; TO263HV; 2.3us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 2kV
Drain current: 1A
Power dissipation: 125W
Case: TO263HV
On-state resistance: 40Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 2.3µs
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IXTA24P085T IXTA24P085T IXYS IXT_24P085T.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -85V; -24A; 83W; TO263
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -85V
Drain current: -24A
Power dissipation: 83W
Case: TO263
Gate-source voltage: ±15V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 41nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 40ns
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IXTA36P15P IXTA36P15P IXYS IXT_36P15P.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -150V; -36A; 300W; TO263
Type of transistor: P-MOSFET
Technology: PolarP™
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -36A
Power dissipation: 300W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 55nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 228ns
товару немає в наявності
 Мінімальне замовлення: 300 шт
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IXTA3N120HV IXTA3N120HV IXYS IXTA3N120HV.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 3A; 200W; TO263HV; 700ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 3A
Power dissipation: 200W
Case: TO263HV
Mounting: SMD
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 700ns
Features of semiconductor devices: standard power mosfet
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IXTA06N120P IXTA06N120P IXYS IXTA(P)06N120P.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 0.6A; 42W; TO263; 900ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 0.6A
Power dissipation: 42W
Case: TO263
On-state resistance: 34Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 900ns
Features of semiconductor devices: standard power mosfet
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IXTN22N100L IXTN22N100L IXYS IXTN22N100L.pdf Category: Transistor modules
Description: Module; single transistor; 1kV; 22A; SOT227B; screw; Idm: 50A; 700W
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1kV
Drain current: 22A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.6Ω
Pulsed drain current: 50A
Power dissipation: 700W
Technology: Linear™
Kind of channel: enhancement
Gate charge: 0.27µC
Reverse recovery time: 1µs
Gate-source voltage: ±40V
Mechanical mounting: screw
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IXTN62N50L IXTN62N50L IXYS IXTN62N50L.pdf Category: Transistor modules
Description: Module; single transistor; 500V; 62A; SOT227B; screw; Idm: 150A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 500V
Drain current: 62A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.1Ω
Pulsed drain current: 150A
Power dissipation: 800W
Technology: Linear™
Kind of channel: enhancement
Gate charge: 550nC
Reverse recovery time: 0.5µs
Gate-source voltage: ±40V
Mechanical mounting: screw
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IXTN200N10L2 IXTN200N10L2 IXYS IXTN200N10L2.pdf Category: Transistor modules
Description: Module; single transistor; 100V; 178A; SOT227B; screw; Idm: 500A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 100V
Drain current: 178A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 11mΩ
Pulsed drain current: 500A
Power dissipation: 830W
Technology: Linear L2™
Kind of channel: enhancement
Gate charge: 540nC
Reverse recovery time: 245ns
Gate-source voltage: ±30V
Mechanical mounting: screw
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IXTN17N120L IXTN17N120L IXYS IXTN17N120L.pdf Category: Transistor modules
Description: Module; single transistor; 1.2kV; 15A; SOT227B; screw; Idm: 34A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.2kV
Drain current: 15A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.9Ω
Pulsed drain current: 34A
Power dissipation: 540W
Technology: Linear™
Kind of channel: enhancement
Gate charge: 155nC
Reverse recovery time: 1.83µs
Gate-source voltage: ±40V
Mechanical mounting: screw
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IXTN40P50P IXTN40P50P IXYS IXTN40P50P.pdf Category: Transistor modules
Description: Module; single transistor; -500V; -40A; SOT227B; screw; Idm: -120A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: -500V
Drain current: -40A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.23Ω
Pulsed drain current: -120A
Power dissipation: 890W
Technology: PolarP™
Kind of channel: enhancement
Gate charge: 205nC
Reverse recovery time: 477ns
Gate-source voltage: ±30V
Mechanical mounting: screw
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IXTN240N075L2 IXTN240N075L2 IXYS IXTN240N075L2.pdf Category: Transistor modules
Description: Module; single transistor; 75V; 225A; SOT227B; screw; Idm: 720A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 75V
Drain current: 225A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 7mΩ
Pulsed drain current: 720A
Power dissipation: 735W
Technology: Linear L2™
Kind of channel: enhancement
Gate charge: 546nC
Reverse recovery time: 206ns
Gate-source voltage: ±30V
Mechanical mounting: screw
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IXTN90N25L2 IXTN90N25L2 IXYS IXTN90N25L2.pdf Category: Transistor modules
Description: Module; single transistor; 250V; 90A; SOT227B; screw; Idm: 360A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 250V
Drain current: 90A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 36mΩ
Pulsed drain current: 360A
Power dissipation: 735W
Technology: Linear L2™
Kind of channel: enhancement
Gate charge: 640nC
Reverse recovery time: 266ns
Gate-source voltage: ±30V
Mechanical mounting: screw
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IXTN170P10P IXTN170P10P IXYS IXTN170P10P.pdf Category: Transistor modules
Description: Module; single transistor; -100V; -170A; SOT227B; screw; Idm: -510A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: -100V
Drain current: -170A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 14mΩ
Pulsed drain current: -510A
Power dissipation: 890W
Technology: PolarP™
Kind of channel: enhancement
Gate charge: 240nC
Reverse recovery time: 176ns
Gate-source voltage: ±30V
Mechanical mounting: screw
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IXTN32P60P IXTN32P60P IXYS IXTN32P60P.pdf Category: Transistor modules
Description: Module; single transistor; -600V; -32A; SOT227B; screw; Idm: -96A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: -600V
Drain current: -32A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.35Ω
Pulsed drain current: -96A
Power dissipation: 890W
Technology: PolarP™
Kind of channel: enhancement
Gate charge: 196nC
Reverse recovery time: 480ns
Gate-source voltage: ±30V
Mechanical mounting: screw
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IXTN550N055T2 IXTN550N055T2 IXYS IXTN550N055T2.pdf Category: Transistor modules
Description: Module; single transistor; 55V; 550A; SOT227B; screw; Idm: 1.65kA
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 55V
Drain current: 550A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 1.3mΩ
Pulsed drain current: 1.65kA
Power dissipation: 940W
Technology: GigaMOS™; TrenchT2™
Kind of channel: enhancement
Gate charge: 595nC
Reverse recovery time: 100ns
Gate-source voltage: ±30V
Mechanical mounting: screw
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IXTN600N04T2 IXTN600N04T2 IXYS IXTN600N04T2.pdf Category: Transistor modules
Description: Module; single transistor; 40V; 600A; SOT227B; screw; Idm: 1.8kA
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 40V
Drain current: 600A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 1.3mΩ
Pulsed drain current: 1.8kA
Power dissipation: 940W
Technology: GigaMOS™; TrenchT2™
Kind of channel: enhancement
Gate charge: 590nC
Reverse recovery time: 100ns
Gate-source voltage: ±30V
Mechanical mounting: screw
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IXTN200N10T IXTN200N10T IXYS IXTN200N10T.pdf Category: Transistor modules
Description: Module; single transistor; 100V; 200A; SOT227B; screw; Idm: 500A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 100V
Drain current: 200A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 5.5mΩ
Pulsed drain current: 500A
Power dissipation: 550W
Technology: TrenchMV™
Kind of channel: enhancement
Gate charge: 152nC
Reverse recovery time: 76ns
Gate-source voltage: ±30V
Mechanical mounting: screw
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IXTN400N15X4 IXYS littelfusediscretemosfetsnchannelultrajuncti.pdf Category: Transistor modules
Description: Module; 150V; 400A; SOT227B; 1.1kW; X4-Class; 175ns; screw
Type of semiconductor module: MOSFET transistor
Drain-source voltage: 150V
Drain current: 400A
Case: SOT227B
On-state resistance: 3.1mΩ
Power dissipation: 1.1kW
Technology: X4-Class
Reverse recovery time: 175ns
Mechanical mounting: screw
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IXTN400N20X4 IXYS ixtn400n20x4-datasheet?assetguid=e76207b4-bd40-4819-a5c2-602b37214629 Category: Transistor modules
Description: Module; 200V; 340A; SOT227B; 830W; 270ns; screw
Type of semiconductor module: MOSFET transistor
Drain-source voltage: 200V
Drain current: 340A
Case: SOT227B
On-state resistance: 3mΩ
Power dissipation: 830W
Reverse recovery time: 270ns
Mechanical mounting: screw
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IXTN5N250 IXYS DS100273AIXTN5N250.pdf Category: Transistor modules
Description: Module; 5A; SOT227B; 700W; 1.2us; screw
Type of semiconductor module: MOSFET transistor
Drain current: 5A
Case: SOT227B
Power dissipation: 700W
Reverse recovery time: 1.2µs
Mechanical mounting: screw
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IXTN8N150L IXTN8N150L IXYS IXTN8N150L.pdf Category: Transistor modules
Description: Module; single transistor; 1.5kV; 7.5A; SOT227B; screw; Idm: 20A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.5kV
Drain current: 7.5A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 3.6Ω
Pulsed drain current: 20A
Power dissipation: 545W
Technology: Linear™
Kind of channel: enhancement
Gate charge: 250nC
Reverse recovery time: 1.7µs
Gate-source voltage: ±40V
Mechanical mounting: screw
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IXTH102N15T IXYS littelfuse-discrete-mosfets-ixt-102n15t-datasheet?assetguid=239cf561-3070-4bc3-913c-311ffa82b091 Category: THT N channel transistors
Description: Transistor: N-MOSFET; 150V; 102A; 455W; TO247-3; 97ns
Type of transistor: N-MOSFET
Drain-source voltage: 150V
Drain current: 102A
Power dissipation: 455W
Case: TO247-3
Gate-source voltage: 20V
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 87nC
Kind of channel: enhancement
Reverse recovery time: 97ns
Application: automotive industry
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IX4310TTR IX4310TTR IXYS media?resourcetype=datasheets&itemid=F6C6E9CC-7C3E-472D-BAD7-D563F01F2FA2&filename=IX4310T Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SOT23-5; -2÷2A; Ch: 2; 5÷24V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SOT23-5
Output current: -2...2A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 5...24V
Kind of output: non-inverting
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IX4310NTR IX4310NTR IXYS Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -2÷2A; Ch: 2; 5÷24V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -2...2A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 5...24V
Kind of output: non-inverting
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DPG30C200PC-TRL IXYS DPG30C200PC.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 15Ax2; 35ns; TO263AB; Ufmax: 1.51V
Max. off-state voltage: 200V
Load current: 15A x2
Max. forward impulse current: 0.24kA
Max. forward voltage: 1.51V
Case: TO263AB
Type of diode: rectifying
Reverse recovery time: 35ns
Mounting: SMD
Power dissipation: 90W
Technology: HiPerFRED™
Features of semiconductor devices: fast switching
Kind of package: reel; tape
Semiconductor structure: common cathode; double
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DPG30C300PC-TRL IXYS DPG30C300PC.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 300V; 15Ax2; 35ns; TO263AB; Ufmax: 1.51V
Max. off-state voltage: 300V
Load current: 15A x2
Max. forward impulse current: 0.24kA
Max. forward voltage: 1.51V
Case: TO263AB
Type of diode: rectifying
Reverse recovery time: 35ns
Mounting: SMD
Power dissipation: 90W
Technology: HiPerFRED™
Features of semiconductor devices: fast switching
Kind of package: reel; tape
Semiconductor structure: common cathode; double
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MCMA85P1200TA IXYS PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 85A; Ifmax: 135A; TO240AA
Max. off-state voltage: 1.2kV
Load current: 85A
Max. forward impulse current: 1.28kA
Electrical mounting: screw
Max. forward voltage: 1.51V
Case: TO240AA
Mechanical mounting: screw
Gate current: 95/200mA
Type of semiconductor module: thyristor
Max. load current: 135A
Kind of package: bulk
Semiconductor structure: double series
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MCMA85P1600TA IXYS PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 85A; Ifmax: 135A; TO240AA
Max. off-state voltage: 1.6kV
Load current: 85A
Max. forward impulse current: 1.28kA
Electrical mounting: screw
Max. forward voltage: 1.51V
Case: TO240AA
Mechanical mounting: screw
Gate current: 95/200mA
Type of semiconductor module: thyristor
Max. load current: 135A
Kind of package: bulk
Semiconductor structure: double series
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MCMA85P1800TA IXYS Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 85A; Ifmax: 135A; TO240AA
Max. off-state voltage: 1.8kV
Load current: 85A
Max. forward impulse current: 1.28kA
Electrical mounting: screw
Max. forward voltage: 1.51V
Case: TO240AA
Mechanical mounting: screw
Gate current: 95/200mA
Type of semiconductor module: thyristor
Max. load current: 135A
Semiconductor structure: double series
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DPG20C400PC-TRL IXYS DPG20C400PC.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 10Ax2; 45ns; TO263AB; Ufmax: 1.51V
Max. off-state voltage: 0.4kV
Load current: 10A x2
Max. forward impulse current: 150A
Max. forward voltage: 1.51V
Case: TO263AB
Type of diode: rectifying
Reverse recovery time: 45ns
Mounting: SMD
Power dissipation: 65W
Technology: HiPerFRED™
Features of semiconductor devices: fast switching
Kind of package: reel; tape
Semiconductor structure: common cathode; double
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IXFH48N60X3 IXYS littelfuse-discrete-mosfets-n-channel-ultra-junction-ixfh48n60x3-datasheet?assetguid=56fbf66a-dfcb-47b6-880a-362aa913cf1a Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 600V; 48A; Idm: 68A; 520W
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Power dissipation: 520W
Case: TO247-3
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Reverse recovery time: 163ns
Pulsed drain current: 68A
Polarisation: unipolar
Drain current: 48A
Kind of channel: enhancement
Drain-source voltage: 600V
Gate-source voltage: ±20V
On-state resistance: 65mΩ
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IXGQ85N33PCD1 IXYS DS99610E%28IXG_85N33PCD1%29.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 330V; 85A; 150W; TO3P
Type of transistor: IGBT
Kind of package: tube
Case: TO3P
Collector current: 85A
Mounting: THT
Collector-emitter voltage: 330V
Power dissipation: 150W
Gate charge: 80nC
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IXTA140N055T2 IXTA140N055T2 IXYS littelfuse_discrete_mosfets_n-channel_trench_gate_ixt_140n055t2_datasheet.pdf?assetguid=886c24a8-3d1d-4378-98ef-e3645ff1ea05 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 55V; 140A; 250W; D2PAK,TO263; 40ns
Type of transistor: N-MOSFET
Drain-source voltage: 55V
Drain current: 140A
Power dissipation: 250W
Case: D2PAK; TO263
Gate-source voltage: 20V
On-state resistance: 5.4mΩ
Mounting: SMD
Gate charge: 82nC
Kind of channel: enhancement
Reverse recovery time: 40ns
Application: automotive industry
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IXTT140N075L2HV-TR IXYS Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 75V; 140A; 540W; D3PAK,TO268; 200ns
Type of transistor: N-MOSFET
Drain-source voltage: 75V
Drain current: 140A
Power dissipation: 540W
Case: D3PAK; TO268
Gate-source voltage: 20V
Mounting: SMD
Gate charge: 275nC
Reverse recovery time: 200ns
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IXFX140N25T IXFX140N25T IXYS IXFK(X)140N25T.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 140A; 960W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 140A
Power dissipation: 960W
Case: PLUS247™
On-state resistance: 17mΩ
Mounting: THT
Gate charge: 255nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
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IXTH8P50 IXT_8P50.pdf
IXTH8P50
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -500V; -8A; 180W; TO247-3; 400ns
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -500V
Drain current: -8A
Power dissipation: 180W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: THT
Gate charge: 130nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 400ns
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IXTH20P50P IXT_20P50P.pdf
IXTH20P50P
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -500V; -20A; 460W; TO247-3
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -500V
Drain current: -20A
Power dissipation: 460W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.45Ω
Mounting: THT
Gate charge: 103nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 406ns
Technology: PolarP™
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IXTH10P50P IXT_10P50P.pdf
IXTH10P50P
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -500V; -10A; 300W; TO247-3
Power dissipation: 300W
Gate charge: 50nC
Polarisation: unipolar
Technology: PolarP™
Drain current: -10A
Kind of channel: enhancement
Drain-source voltage: -500V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO247-3
On-state resistance: 1Ω
Reverse recovery time: 414ns
Mounting: THT
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IXTH90P10P IXT_90P10P.pdf
IXTH90P10P
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -100V; -90A; 462W; TO247-3
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -90A
Power dissipation: 462W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 144ns
Technology: PolarP™
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IXTH16N20D2 IXTH(T)16N20D2.pdf
IXTH16N20D2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 16A; 695W; TO247-3; 607ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 16A
Power dissipation: 695W
Case: TO247-3
On-state resistance: 80mΩ
Mounting: THT
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 607ns
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IXTH88N30P IXTH88N30P-DTE.pdf
IXTH88N30P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 300V; 88A; 600W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 88A
Power dissipation: 600W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Technology: PolarHT™
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IXTH88N15 IXTH88N15.pdf
IXTH88N15
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 88A; 400W; TO247-3; 150ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 88A
Power dissipation: 400W
Case: TO247-3
On-state resistance: 22mΩ
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
Features of semiconductor devices: standard power mosfet
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IXTH10P60 IXT_10P60.pdf
IXTH10P60
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -600V; -10A; 300W; TO247-3; 500ns
Power dissipation: 300W
Gate charge: 135nC
Polarisation: unipolar
Drain current: -10A
Kind of channel: enhancement
Drain-source voltage: -600V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO247-3
On-state resistance: 1Ω
Reverse recovery time: 0.5µs
Mounting: THT
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Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXTP08N100D2 IXTA(P,Y)08N100D2.pdf
IXTP08N100D2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.8A; 60W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 0.8A
Power dissipation: 60W
Case: TO220AB
On-state resistance: 21Ω
Mounting: THT
Kind of package: tube
Kind of channel: depletion
Gate charge: 325nC
на замовлення 9 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
2+281.61 грн
8+135.84 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IXTA08N100D2 IXTA(P,Y)08N100D2.pdf
IXTA08N100D2
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.8A; 60W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 0.8A
Power dissipation: 60W
Case: TO263
On-state resistance: 21Ω
Mounting: SMD
Kind of package: tube
Kind of channel: depletion
Gate charge: 325nC
на замовлення 300 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
2+321.84 грн
7+138.39 грн
20+130.75 грн
250+125.65 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
CPC3708CTR CPC3708.pdf
CPC3708CTR
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 350V; 0.13A; 1.8W; SOT89
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 350V
Drain current: 0.13A
Power dissipation: 1.8W
Case: SOT89
Gate-source voltage: ±20V
On-state resistance: 8Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
на замовлення 2267 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
8+62.17 грн
12+37.19 грн
33+29.29 грн
91+27.68 грн
1000+26.57 грн
Мінімальне замовлення: 8 шт
В кошику  од. на суму  грн.
CPC3708ZTR CPC3708.pdf
CPC3708ZTR
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 350V; 0.13A; 2.5W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 350V
Drain current: 0.13A
Power dissipation: 2.5W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 8Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
на замовлення 691 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
9+55.77 грн
13+34.98 грн
54+17.91 грн
149+16.98 грн
Мінімальне замовлення: 9 шт
В кошику  од. на суму  грн.
CPC3720CTR CPC3720.pdf
CPC3720CTR
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 350V; 0.13A; 1.4W; SOT89
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 350V
Drain current: 0.13A
Power dissipation: 1.4W
Case: SOT89
Gate-source voltage: ±15V
On-state resistance: 22Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
на замовлення 12 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
11+44.80 грн
12+35.66 грн
Мінімальне замовлення: 11 шт
В кошику  од. на суму  грн.
IXTA10P50P IXT_10P50P.pdf
IXTA10P50P
Виробник: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -500V; -10A; 300W; TO263
Type of transistor: P-MOSFET
Technology: PolarP™
Polarisation: unipolar
Drain-source voltage: -500V
Drain current: -10A
Power dissipation: 300W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 1Ω
Mounting: SMD
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 414ns
на замовлення 40 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
2+445.28 грн
3+324.32 грн
9+306.50 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IXTA96P085T IXTA96P085T-dte.pdf
IXTA96P085T
Виробник: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -85V; -96A; 298W; TO263
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -85V
Drain current: -96A
Power dissipation: 298W
Case: TO263
Gate-source voltage: ±15V
On-state resistance: 13mΩ
Mounting: SMD
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 55ns
на замовлення 107 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+642.77 грн
4+307.34 грн
9+290.36 грн
В кошику  од. на суму  грн.
IXTA32P05T IXT_32P05T.pdf
IXTA32P05T
Виробник: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -32A; 83W; TO263
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -32A
Power dissipation: 83W
Case: TO263
Gate-source voltage: ±15V
On-state resistance: 39mΩ
Mounting: SMD
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 26ns
на замовлення 294 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
2+307.21 грн
9+120.56 грн
23+113.77 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IXTA36N30P IXTA36N30P-DTE.pdf
IXTA36N30P
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 300V; 36A; 300W; TO263
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 36A
Power dissipation: 300W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
на замовлення 193 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
2+395.90 грн
5+238.57 грн
10+223.29 грн
50+219.90 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IXTA52P10P IXT_52P10P.pdf
IXTA52P10P
Виробник: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -100V; -52A; 300W; TO263
Type of transistor: P-MOSFET
Technology: PolarP™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -52A
Power dissipation: 300W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 120ns
на замовлення 300 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+542.20 грн
3+355.74 грн
8+336.21 грн
150+329.42 грн
В кошику  од. на суму  грн.
IXTA28P065T IXT_28P065T.pdf
IXTA28P065T
Виробник: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -65V; -28A; 83W; TO263
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -65V
Drain current: -28A
Power dissipation: 83W
Case: TO263
Gate-source voltage: ±15V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 31ns
на замовлення 198 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
2+351.10 грн
8+130.75 грн
21+123.11 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IXTA2N100P IXTA(P,Y)2N100P.pdf
IXTA2N100P
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 2A; 86W; TO263; 800ns
Mounting: SMD
Kind of package: tube
Type of transistor: N-MOSFET
Case: TO263
Reverse recovery time: 800ns
Power dissipation: 86W
Polarisation: unipolar
Features of semiconductor devices: standard power mosfet
Drain current: 2A
Kind of channel: enhancement
Drain-source voltage: 1kV
на замовлення 293 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
3+168.11 грн
7+156.22 грн
10+151.97 грн
17+147.73 грн
50+142.63 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
IXTA4N70X2 ixty2n65x2.pdf
IXTA4N70X2
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 4A; Idm: 8A; 80W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 4A
Power dissipation: 80W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 11.8nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 8A
на замовлення 38 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
3+154.52 грн
9+112.07 грн
24+106.13 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
IXTA3N50P IXTA3N50P-DTE.pdf
IXTA3N50P
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 3A; 70W; TO263; 400ns
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3A
Power dissipation: 70W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 9.3nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 400ns
на замовлення 8 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
7+75.89 грн
Мінімальне замовлення: 7 шт
В кошику  од. на суму  грн.
IXTA340N04T4-7 IXTA340N04T4.pdf
IXTA340N04T4-7
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 340A; 480W; TO263-7; 43ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 340A
Power dissipation: 480W
Case: TO263-7
On-state resistance: 1.7mΩ
Mounting: SMD
Gate charge: 256nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 43ns
Features of semiconductor devices: thrench gate power mosfet
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IXTA10P50P-TRL littelfuse-discrete-mosfets-ixt-10p50p-datasheet?assetguid=02d9f7f4-854a-4f4b-b3f3-dc66c452f634
IXTA10P50P-TRL
Виробник: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; 10A; 300W; D2PAK
Type of transistor: P-MOSFET
Drain current: 10A
Power dissipation: 300W
Case: D2PAK
Gate-source voltage: 20V
On-state resistance: 1Ω
Mounting: SMD
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
IXTA1N170DHV IXTA(H)1N170DHV.pdf
IXTA1N170DHV
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.7kV; 1A; 290W; TO263HV; 30ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.7kV
Drain current: 1A
Power dissipation: 290W
Case: TO263HV
On-state resistance: 16Ω
Mounting: SMD
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 30ns
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IXTA1N200P3HV IXTA(H)1N200P3HV.pdf
IXTA1N200P3HV
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 2kV; 1A; 125W; TO263HV; 2.3us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 2kV
Drain current: 1A
Power dissipation: 125W
Case: TO263HV
On-state resistance: 40Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 2.3µs
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IXTA24P085T IXT_24P085T.pdf
IXTA24P085T
Виробник: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -85V; -24A; 83W; TO263
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -85V
Drain current: -24A
Power dissipation: 83W
Case: TO263
Gate-source voltage: ±15V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 41nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 40ns
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IXTA36P15P IXT_36P15P.pdf
IXTA36P15P
Виробник: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -150V; -36A; 300W; TO263
Type of transistor: P-MOSFET
Technology: PolarP™
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -36A
Power dissipation: 300W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 55nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 228ns
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXTA3N120HV IXTA3N120HV.pdf
IXTA3N120HV
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 3A; 200W; TO263HV; 700ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 3A
Power dissipation: 200W
Case: TO263HV
Mounting: SMD
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 700ns
Features of semiconductor devices: standard power mosfet
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IXTA06N120P IXTA(P)06N120P.pdf
IXTA06N120P
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 0.6A; 42W; TO263; 900ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 0.6A
Power dissipation: 42W
Case: TO263
On-state resistance: 34Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 900ns
Features of semiconductor devices: standard power mosfet
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IXTN22N100L IXTN22N100L.pdf
IXTN22N100L
Виробник: IXYS
Category: Transistor modules
Description: Module; single transistor; 1kV; 22A; SOT227B; screw; Idm: 50A; 700W
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1kV
Drain current: 22A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.6Ω
Pulsed drain current: 50A
Power dissipation: 700W
Technology: Linear™
Kind of channel: enhancement
Gate charge: 0.27µC
Reverse recovery time: 1µs
Gate-source voltage: ±40V
Mechanical mounting: screw
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IXTN62N50L IXTN62N50L.pdf
IXTN62N50L
Виробник: IXYS
Category: Transistor modules
Description: Module; single transistor; 500V; 62A; SOT227B; screw; Idm: 150A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 500V
Drain current: 62A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.1Ω
Pulsed drain current: 150A
Power dissipation: 800W
Technology: Linear™
Kind of channel: enhancement
Gate charge: 550nC
Reverse recovery time: 0.5µs
Gate-source voltage: ±40V
Mechanical mounting: screw
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IXTN200N10L2 IXTN200N10L2.pdf
IXTN200N10L2
Виробник: IXYS
Category: Transistor modules
Description: Module; single transistor; 100V; 178A; SOT227B; screw; Idm: 500A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 100V
Drain current: 178A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 11mΩ
Pulsed drain current: 500A
Power dissipation: 830W
Technology: Linear L2™
Kind of channel: enhancement
Gate charge: 540nC
Reverse recovery time: 245ns
Gate-source voltage: ±30V
Mechanical mounting: screw
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IXTN17N120L IXTN17N120L.pdf
IXTN17N120L
Виробник: IXYS
Category: Transistor modules
Description: Module; single transistor; 1.2kV; 15A; SOT227B; screw; Idm: 34A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.2kV
Drain current: 15A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.9Ω
Pulsed drain current: 34A
Power dissipation: 540W
Technology: Linear™
Kind of channel: enhancement
Gate charge: 155nC
Reverse recovery time: 1.83µs
Gate-source voltage: ±40V
Mechanical mounting: screw
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IXTN40P50P IXTN40P50P.pdf
IXTN40P50P
Виробник: IXYS
Category: Transistor modules
Description: Module; single transistor; -500V; -40A; SOT227B; screw; Idm: -120A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: -500V
Drain current: -40A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.23Ω
Pulsed drain current: -120A
Power dissipation: 890W
Technology: PolarP™
Kind of channel: enhancement
Gate charge: 205nC
Reverse recovery time: 477ns
Gate-source voltage: ±30V
Mechanical mounting: screw
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IXTN240N075L2 IXTN240N075L2.pdf
IXTN240N075L2
Виробник: IXYS
Category: Transistor modules
Description: Module; single transistor; 75V; 225A; SOT227B; screw; Idm: 720A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 75V
Drain current: 225A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 7mΩ
Pulsed drain current: 720A
Power dissipation: 735W
Technology: Linear L2™
Kind of channel: enhancement
Gate charge: 546nC
Reverse recovery time: 206ns
Gate-source voltage: ±30V
Mechanical mounting: screw
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IXTN90N25L2 IXTN90N25L2.pdf
IXTN90N25L2
Виробник: IXYS
Category: Transistor modules
Description: Module; single transistor; 250V; 90A; SOT227B; screw; Idm: 360A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 250V
Drain current: 90A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 36mΩ
Pulsed drain current: 360A
Power dissipation: 735W
Technology: Linear L2™
Kind of channel: enhancement
Gate charge: 640nC
Reverse recovery time: 266ns
Gate-source voltage: ±30V
Mechanical mounting: screw
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IXTN170P10P IXTN170P10P.pdf
IXTN170P10P
Виробник: IXYS
Category: Transistor modules
Description: Module; single transistor; -100V; -170A; SOT227B; screw; Idm: -510A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: -100V
Drain current: -170A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 14mΩ
Pulsed drain current: -510A
Power dissipation: 890W
Technology: PolarP™
Kind of channel: enhancement
Gate charge: 240nC
Reverse recovery time: 176ns
Gate-source voltage: ±30V
Mechanical mounting: screw
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IXTN32P60P IXTN32P60P.pdf
IXTN32P60P
Виробник: IXYS
Category: Transistor modules
Description: Module; single transistor; -600V; -32A; SOT227B; screw; Idm: -96A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: -600V
Drain current: -32A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.35Ω
Pulsed drain current: -96A
Power dissipation: 890W
Technology: PolarP™
Kind of channel: enhancement
Gate charge: 196nC
Reverse recovery time: 480ns
Gate-source voltage: ±30V
Mechanical mounting: screw
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IXTN550N055T2 IXTN550N055T2.pdf
IXTN550N055T2
Виробник: IXYS
Category: Transistor modules
Description: Module; single transistor; 55V; 550A; SOT227B; screw; Idm: 1.65kA
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 55V
Drain current: 550A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 1.3mΩ
Pulsed drain current: 1.65kA
Power dissipation: 940W
Technology: GigaMOS™; TrenchT2™
Kind of channel: enhancement
Gate charge: 595nC
Reverse recovery time: 100ns
Gate-source voltage: ±30V
Mechanical mounting: screw
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IXTN600N04T2 IXTN600N04T2.pdf
IXTN600N04T2
Виробник: IXYS
Category: Transistor modules
Description: Module; single transistor; 40V; 600A; SOT227B; screw; Idm: 1.8kA
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 40V
Drain current: 600A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 1.3mΩ
Pulsed drain current: 1.8kA
Power dissipation: 940W
Technology: GigaMOS™; TrenchT2™
Kind of channel: enhancement
Gate charge: 590nC
Reverse recovery time: 100ns
Gate-source voltage: ±30V
Mechanical mounting: screw
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IXTN200N10T IXTN200N10T.pdf
IXTN200N10T
Виробник: IXYS
Category: Transistor modules
Description: Module; single transistor; 100V; 200A; SOT227B; screw; Idm: 500A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 100V
Drain current: 200A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 5.5mΩ
Pulsed drain current: 500A
Power dissipation: 550W
Technology: TrenchMV™
Kind of channel: enhancement
Gate charge: 152nC
Reverse recovery time: 76ns
Gate-source voltage: ±30V
Mechanical mounting: screw
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IXTN400N15X4 littelfusediscretemosfetsnchannelultrajuncti.pdf
Виробник: IXYS
Category: Transistor modules
Description: Module; 150V; 400A; SOT227B; 1.1kW; X4-Class; 175ns; screw
Type of semiconductor module: MOSFET transistor
Drain-source voltage: 150V
Drain current: 400A
Case: SOT227B
On-state resistance: 3.1mΩ
Power dissipation: 1.1kW
Technology: X4-Class
Reverse recovery time: 175ns
Mechanical mounting: screw
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Мінімальне замовлення: 300 шт
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IXTN400N20X4 ixtn400n20x4-datasheet?assetguid=e76207b4-bd40-4819-a5c2-602b37214629
Виробник: IXYS
Category: Transistor modules
Description: Module; 200V; 340A; SOT227B; 830W; 270ns; screw
Type of semiconductor module: MOSFET transistor
Drain-source voltage: 200V
Drain current: 340A
Case: SOT227B
On-state resistance: 3mΩ
Power dissipation: 830W
Reverse recovery time: 270ns
Mechanical mounting: screw
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Мінімальне замовлення: 300 шт
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IXTN5N250 DS100273AIXTN5N250.pdf
Виробник: IXYS
Category: Transistor modules
Description: Module; 5A; SOT227B; 700W; 1.2us; screw
Type of semiconductor module: MOSFET transistor
Drain current: 5A
Case: SOT227B
Power dissipation: 700W
Reverse recovery time: 1.2µs
Mechanical mounting: screw
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Мінімальне замовлення: 300 шт
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IXTN8N150L IXTN8N150L.pdf
IXTN8N150L
Виробник: IXYS
Category: Transistor modules
Description: Module; single transistor; 1.5kV; 7.5A; SOT227B; screw; Idm: 20A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.5kV
Drain current: 7.5A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 3.6Ω
Pulsed drain current: 20A
Power dissipation: 545W
Technology: Linear™
Kind of channel: enhancement
Gate charge: 250nC
Reverse recovery time: 1.7µs
Gate-source voltage: ±40V
Mechanical mounting: screw
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Мінімальне замовлення: 300 шт
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IXTH102N15T littelfuse-discrete-mosfets-ixt-102n15t-datasheet?assetguid=239cf561-3070-4bc3-913c-311ffa82b091
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; 150V; 102A; 455W; TO247-3; 97ns
Type of transistor: N-MOSFET
Drain-source voltage: 150V
Drain current: 102A
Power dissipation: 455W
Case: TO247-3
Gate-source voltage: 20V
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 87nC
Kind of channel: enhancement
Reverse recovery time: 97ns
Application: automotive industry
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Мінімальне замовлення: 300 шт
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IX4310TTR media?resourcetype=datasheets&itemid=F6C6E9CC-7C3E-472D-BAD7-D563F01F2FA2&filename=IX4310T
IX4310TTR
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SOT23-5; -2÷2A; Ch: 2; 5÷24V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SOT23-5
Output current: -2...2A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 5...24V
Kind of output: non-inverting
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Мінімальне замовлення: 3000 шт
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IX4310NTR
IX4310NTR
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -2÷2A; Ch: 2; 5÷24V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -2...2A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 5...24V
Kind of output: non-inverting
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Мінімальне замовлення: 4000 шт
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DPG30C200PC-TRL DPG30C200PC.pdf
Виробник: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 15Ax2; 35ns; TO263AB; Ufmax: 1.51V
Max. off-state voltage: 200V
Load current: 15A x2
Max. forward impulse current: 0.24kA
Max. forward voltage: 1.51V
Case: TO263AB
Type of diode: rectifying
Reverse recovery time: 35ns
Mounting: SMD
Power dissipation: 90W
Technology: HiPerFRED™
Features of semiconductor devices: fast switching
Kind of package: reel; tape
Semiconductor structure: common cathode; double
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Мінімальне замовлення: 800 шт
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DPG30C300PC-TRL DPG30C300PC.pdf
Виробник: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 300V; 15Ax2; 35ns; TO263AB; Ufmax: 1.51V
Max. off-state voltage: 300V
Load current: 15A x2
Max. forward impulse current: 0.24kA
Max. forward voltage: 1.51V
Case: TO263AB
Type of diode: rectifying
Reverse recovery time: 35ns
Mounting: SMD
Power dissipation: 90W
Technology: HiPerFRED™
Features of semiconductor devices: fast switching
Kind of package: reel; tape
Semiconductor structure: common cathode; double
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Мінімальне замовлення: 800 шт
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MCMA85P1200TA PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 85A; Ifmax: 135A; TO240AA
Max. off-state voltage: 1.2kV
Load current: 85A
Max. forward impulse current: 1.28kA
Electrical mounting: screw
Max. forward voltage: 1.51V
Case: TO240AA
Mechanical mounting: screw
Gate current: 95/200mA
Type of semiconductor module: thyristor
Max. load current: 135A
Kind of package: bulk
Semiconductor structure: double series
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MCMA85P1600TA PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 85A; Ifmax: 135A; TO240AA
Max. off-state voltage: 1.6kV
Load current: 85A
Max. forward impulse current: 1.28kA
Electrical mounting: screw
Max. forward voltage: 1.51V
Case: TO240AA
Mechanical mounting: screw
Gate current: 95/200mA
Type of semiconductor module: thyristor
Max. load current: 135A
Kind of package: bulk
Semiconductor structure: double series
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MCMA85P1800TA
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 85A; Ifmax: 135A; TO240AA
Max. off-state voltage: 1.8kV
Load current: 85A
Max. forward impulse current: 1.28kA
Electrical mounting: screw
Max. forward voltage: 1.51V
Case: TO240AA
Mechanical mounting: screw
Gate current: 95/200mA
Type of semiconductor module: thyristor
Max. load current: 135A
Semiconductor structure: double series
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Мінімальне замовлення: 36 шт
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DPG20C400PC-TRL DPG20C400PC.pdf
Виробник: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 10Ax2; 45ns; TO263AB; Ufmax: 1.51V
Max. off-state voltage: 0.4kV
Load current: 10A x2
Max. forward impulse current: 150A
Max. forward voltage: 1.51V
Case: TO263AB
Type of diode: rectifying
Reverse recovery time: 45ns
Mounting: SMD
Power dissipation: 65W
Technology: HiPerFRED™
Features of semiconductor devices: fast switching
Kind of package: reel; tape
Semiconductor structure: common cathode; double
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Мінімальне замовлення: 800 шт
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IXFH48N60X3 littelfuse-discrete-mosfets-n-channel-ultra-junction-ixfh48n60x3-datasheet?assetguid=56fbf66a-dfcb-47b6-880a-362aa913cf1a
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 600V; 48A; Idm: 68A; 520W
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Power dissipation: 520W
Case: TO247-3
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Reverse recovery time: 163ns
Pulsed drain current: 68A
Polarisation: unipolar
Drain current: 48A
Kind of channel: enhancement
Drain-source voltage: 600V
Gate-source voltage: ±20V
On-state resistance: 65mΩ
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IXGQ85N33PCD1 DS99610E%28IXG_85N33PCD1%29.pdf
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 330V; 85A; 150W; TO3P
Type of transistor: IGBT
Kind of package: tube
Case: TO3P
Collector current: 85A
Mounting: THT
Collector-emitter voltage: 330V
Power dissipation: 150W
Gate charge: 80nC
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Мінімальне замовлення: 300 шт
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IXTA140N055T2 littelfuse_discrete_mosfets_n-channel_trench_gate_ixt_140n055t2_datasheet.pdf?assetguid=886c24a8-3d1d-4378-98ef-e3645ff1ea05
IXTA140N055T2
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 55V; 140A; 250W; D2PAK,TO263; 40ns
Type of transistor: N-MOSFET
Drain-source voltage: 55V
Drain current: 140A
Power dissipation: 250W
Case: D2PAK; TO263
Gate-source voltage: 20V
On-state resistance: 5.4mΩ
Mounting: SMD
Gate charge: 82nC
Kind of channel: enhancement
Reverse recovery time: 40ns
Application: automotive industry
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Мінімальне замовлення: 300 шт
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IXTT140N075L2HV-TR
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 75V; 140A; 540W; D3PAK,TO268; 200ns
Type of transistor: N-MOSFET
Drain-source voltage: 75V
Drain current: 140A
Power dissipation: 540W
Case: D3PAK; TO268
Gate-source voltage: 20V
Mounting: SMD
Gate charge: 275nC
Reverse recovery time: 200ns
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Мінімальне замовлення: 400 шт
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IXFX140N25T IXFK(X)140N25T.pdf
IXFX140N25T
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 140A; 960W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 140A
Power dissipation: 960W
Case: PLUS247™
On-state resistance: 17mΩ
Mounting: THT
Gate charge: 255nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
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