| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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|---|---|---|---|---|---|---|---|---|---|
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IXKK85N60C | IXYS |
 Description: MOSFET N-CH 600V 85A TO264APackaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 85A (Tc) Rds On (Max) @ Id, Vgs: 36mOhm @ 55A, 10V Vgs(th) (Max) @ Id: 4V @ 4mA Supplier Device Package: TO-264AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 650 nC @ 10 V |
на замовлення 107 шт: термін постачання 21-31 дні (днів) |
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IXKN40N60C | IXYS |
Description: MOSFET N-CH 600V 40A SOT-227B Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 70mOhm @ 500mA, 10V Power Dissipation (Max): 290W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 2.5mA Supplier Device Package: SOT-227B Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V |
на замовлення 7 шт: термін постачання 21-31 дні (днів) |
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IXKN45N80C | IXYS |
Description: MOSFET N-CH 800V 44A SOT-227B |
товару немає в наявності |
В кошику од. на суму грн. | ||||
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IXKN75N60C | IXYS |
Description: MOSFET N-CH 600V 75A SOT-227B Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 36mOhm @ 50A, 10V Power Dissipation (Max): 560W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 5mA Supplier Device Package: SOT-227B Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 500 nC @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||
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IXKR25N80C | IXYS |
Description: MOSFET N-CH 800V 25A ISOPLUS247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 150mOhm @ 18A, 10V Vgs(th) (Max) @ Id: 4V @ 2mA Supplier Device Package: ISOPLUS247™ Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 355 nC @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||
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IXKR40N60C | IXYS |
Description: MOSFET N-CH 600V 38A ISOPLUS247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 38A (Tc) Rds On (Max) @ Id, Vgs: 70mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 3.9V @ 3mA Supplier Device Package: ISOPLUS247™ Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||
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IXRP15N120 | IXYS |
Description: IGBT NPT 1200V 25A TO-220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 300 ns Vce(on) (Max) @ Vge, Ic: 2.95V @ 15V, 10A Supplier Device Package: TO-220-3 IGBT Type: NPT Switching Energy: 1.1mJ (on), 130µJ (off) Test Condition: 600V, 10A, 47Ohm, 15V Gate Charge: 36 nC Part Status: Obsolete Current - Collector (Ic) (Max): 25 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 300 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||
| IXS839AQ2 | IXYS |
Description: IC MOSFET DRIVER SYNC BUCK 10QFN |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| IXS839AQ2T/R | IXYS |
Description: IC MOSFET DRIVER SYNC BUCK 10QFN |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| IXS839BQ2 | IXYS |
Description: IC MOSFET DRIVER SYNC BUCK 10QFN |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| IXS839BQ2T/R | IXYS |
Description: IC MOSFET DRIVER SYNC BUCK 10QFN |
товару немає в наявності |
В кошику од. на суму грн. | |||||
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IXS839S1 | IXYS |
Description: IC GATE DRVR HALF-BRIDGE 8SOIC Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TJ) Voltage - Supply: 4.5V ~ 5.5V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 24 V Supplier Device Package: 8-SOIC Rise / Fall Time (Typ): 20ns, 15ns Channel Type: Synchronous Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: N-Channel MOSFET Logic Voltage - VIL, VIH: 0.8V, 2V Current - Peak Output (Source, Sink): 2A, 4A DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||
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IXS839S1T/R | IXYS |
Description: IC GATE DRVR HALF-BRIDGE 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TJ) Voltage - Supply: 4.5V ~ 5.5V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 24 V Supplier Device Package: 8-SOIC Rise / Fall Time (Typ): 20ns, 15ns Channel Type: Synchronous Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: N-Channel MOSFET Logic Voltage - VIL, VIH: 0.8V, 2V Current - Peak Output (Source, Sink): 2A, 4A DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||
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IXSA15N120B | IXYS |
Description: IGBT PT 1200V 30A TO-263AA Packaging: Box Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 15A Supplier Device Package: TO-263AA IGBT Type: PT Td (on/off) @ 25°C: 30ns/148ns Switching Energy: 1.75mJ (off) Test Condition: 960V, 15A, 10Ohm, 15V Gate Charge: 57 nC Part Status: Obsolete Current - Collector (Ic) (Max): 30 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 60 A Power - Max: 150 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||
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IXSH15N120B | IXYS |
Description: IGBT PT 1200V 30A TO-247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 15A Supplier Device Package: TO-247AD IGBT Type: PT Td (on/off) @ 25°C: 30ns/148ns Switching Energy: 1.5mJ (off) Test Condition: 960V, 15A, 10Ohm, 15V Gate Charge: 57 nC Part Status: Obsolete Current - Collector (Ic) (Max): 30 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 60 A Power - Max: 150 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||
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IXSH15N120BD1 | IXYS |
Description: IGBT PT 1200V 30A TO-247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 30 ns Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 15A Supplier Device Package: TO-247AD IGBT Type: PT Td (on/off) @ 25°C: 30ns/148ns Switching Energy: 1.5mJ (off) Test Condition: 960V, 15A, 10Ohm, 15V Gate Charge: 57 nC Part Status: Obsolete Current - Collector (Ic) (Max): 30 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 60 A Power - Max: 150 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||
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IXSH30N60BD1 | IXYS |
Description: IGBT 600V 55A TO-247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 50 ns Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 55A Supplier Device Package: TO-247AD Td (on/off) @ 25°C: 30ns/150ns Switching Energy: 1.5mJ (off) Test Condition: 480V, 30A, 4.7Ohm, 15V Gate Charge: 100 nC Current - Collector (Ic) (Max): 55 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 110 A Power - Max: 200 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||
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IXSH35N120B | IXYS |
Description: IGBT PT 1200V 70A TO-247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 35A Supplier Device Package: TO-247AD IGBT Type: PT Td (on/off) @ 25°C: 36ns/160ns Switching Energy: 5mJ (off) Test Condition: 960V, 35A, 5Ohm, 15V Gate Charge: 120 nC Part Status: Obsolete Current - Collector (Ic) (Max): 70 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 140 A Power - Max: 300 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||
.jpg "IXSH35N140A") |
IXSH35N140A | IXYS |
Description: IGBT 1400V 70A 300W TO247 |
товару немає в наявності |
В кошику од. на суму грн. | ||||
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IXSH40N60B | IXYS |
Description: IGBT PT 600V 75A TO-247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 40A Supplier Device Package: TO-247AD IGBT Type: PT Td (on/off) @ 25°C: 50ns/110ns Switching Energy: 1.8mJ (off) Test Condition: 480V, 40A, 2.7Ohm, 15V Gate Charge: 190 nC Part Status: Obsolete Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 150 A Power - Max: 280 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||
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IXSH45N100 | IXYS |
Description: IGBT 1000V 75A TO-247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 45A Supplier Device Package: TO-247AD Td (on/off) @ 25°C: 80ns/400ns Switching Energy: 15mJ (off) Test Condition: 800V, 45A, 2.7Ohm, 15V Gate Charge: 165 nC Part Status: Obsolete Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 1000 V Current - Collector Pulsed (Icm): 180 A Power - Max: 300 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||
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IXSH45N120 | IXYS |
Description: IGBT 1200V 75A TO-247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 45A Supplier Device Package: TO-247AD Td (on/off) @ 25°C: 80ns/400ns Switching Energy: 21mJ (off) Test Condition: 960V, 45A, 2.7Ohm, 15V Gate Charge: 150 nC Part Status: Obsolete Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 180 A Power - Max: 300 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||
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IXSH45N120B | IXYS |
Description: IGBT PT 1200V 75A TO-247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 45A Supplier Device Package: TO-247AD IGBT Type: PT Td (on/off) @ 25°C: 36ns/360ns Switching Energy: 13mJ (off) Test Condition: 960V, 45A, 5Ohm, 15V Gate Charge: 120 nC Part Status: Obsolete Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 180 A Power - Max: 300 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||
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IXSH50N60B | IXYS |
Description: IGBT 600V 75A 250W TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 50A Supplier Device Package: TO-247AD IGBT Type: PT Td (on/off) @ 25°C: 70ns/150ns Switching Energy: 3.3mJ (off) Test Condition: 480V, 50A, 2.7Ohm, 15V Gate Charge: 167 nC Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 200 A Power - Max: 250 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||
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IXSK35N120BD1 | IXYS |
Description: IGBT 1200V 70A 300W TO264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 40 ns Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 35A Supplier Device Package: TO-264AA (IXSK) IGBT Type: PT Td (on/off) @ 25°C: 36ns/160ns Switching Energy: 5mJ (off) Test Condition: 960V, 35A, 5Ohm, 15V Gate Charge: 120 nC Part Status: Obsolete Current - Collector (Ic) (Max): 70 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 140 A Power - Max: 300 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||
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IXSK40N60BD1 | IXYS |
Description: IGBT 600V 75A 280W TO264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 35 ns Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 40A Supplier Device Package: TO-264AA (IXSK) Td (on/off) @ 25°C: 50ns/110ns Switching Energy: 1.8mJ (off) Test Condition: 480V, 40A, 2.7Ohm, 15V Gate Charge: 190 nC Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 150 A Power - Max: 280 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||
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IXSK40N60CD1 | IXYS |
Description: IGBT 600V 75A 280W TO264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 35 ns Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A Supplier Device Package: TO-264AA (IXSK) Td (on/off) @ 25°C: 50ns/70ns Switching Energy: 1mJ (off) Test Condition: 480V, 40A, 2.7Ohm, 15V Gate Charge: 190 nC Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 150 A Power - Max: 280 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||
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IXSK80N60B | IXYS |
Description: IGBT 600V 160A 500W TO264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 80A Supplier Device Package: TO-264AA (IXSK) IGBT Type: PT Td (on/off) @ 25°C: 60ns/140ns Switching Energy: 4.2mJ (off) Test Condition: 480V, 80A, 2.7Ohm, 15V Gate Charge: 240 nC Part Status: Obsolete Current - Collector (Ic) (Max): 160 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 300 A Power - Max: 500 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||
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IXSN55N120A | IXYS |
Description: IGBT MOD 1200V 110A 500W SOT227B Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -55°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 55A NTC Thermistor: No Supplier Device Package: SOT-227B Current - Collector (Ic) (Max): 110 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 500 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 8 nF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||
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IXSN80N60BD1 | IXYS |
Description: IGBT MOD 600V 160A 420W SOT227B Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -55°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 80A NTC Thermistor: No Supplier Device Package: SOT-227B Part Status: Obsolete Current - Collector (Ic) (Max): 160 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 420 W Current - Collector Cutoff (Max): 200 µA Input Capacitance (Cies) @ Vce: 6.6 nF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||
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IXSP15N120B | IXYS |
Description: IGBT 1200V 30A TO-220-3 Packaging: Box Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 15A Supplier Device Package: TO-220-3 Td (on/off) @ 25°C: 30ns/148ns Switching Energy: 1.75mJ (off) Test Condition: 960V, 15A, 10Ohm, 15V Gate Charge: 57 nC Part Status: Obsolete Current - Collector (Ic) (Max): 30 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 60 A Power - Max: 150 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||
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IXSR35N120BD1 | IXYS |
Description: IGBT 1200V 70A 250W ISOPLUS247 Packaging: Box Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 40 ns Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 35A Supplier Device Package: ISOPLUS247™ IGBT Type: PT Td (on/off) @ 25°C: 36ns/160ns Switching Energy: 5mJ (off) Test Condition: 960V, 35A, 2.7Ohm, 15V Gate Charge: 120 nC Part Status: Obsolete Current - Collector (Ic) (Max): 70 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 140 A Power - Max: 250 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||
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IXSR40N60BD1 | IXYS |
Description: IGBT PT 600V 70A ISOPLUS247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 35 ns Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 40A Supplier Device Package: ISOPLUS247™ IGBT Type: PT Td (on/off) @ 25°C: 50ns/110ns Switching Energy: 1.8mJ (off) Test Condition: 480V, 40A, 2.7Ohm, 15V Gate Charge: 190 nC Current - Collector (Ic) (Max): 70 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 150 A Power - Max: 170 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||
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IXSR40N60CD1 | IXYS |
Description: IGBT PT 600V 62A ISOPLUS247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 35 ns Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A Supplier Device Package: ISOPLUS247™ IGBT Type: PT Td (on/off) @ 25°C: 50ns/70ns Switching Energy: 1mJ (off) Test Condition: 480V, 40A, 2.7Ohm, 15V Gate Charge: 190 nC Current - Collector (Ic) (Max): 62 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 150 A Power - Max: 210 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||
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IXST15N120B | IXYS |
Description: IGBT PT 1200V 30A TO-268AA Packaging: Tube Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 15A Supplier Device Package: TO-268AA IGBT Type: PT Td (on/off) @ 25°C: 30ns/148ns Switching Energy: 1.5mJ (off) Test Condition: 960V, 15A, 10Ohm, 15V Gate Charge: 57 nC Part Status: Obsolete Current - Collector (Ic) (Max): 30 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 60 A Power - Max: 150 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||
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IXST15N120BD1 | IXYS |
Description: IGBT PT 1200V 30A TO-268AA Packaging: Tube Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 30 ns Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 15A Supplier Device Package: TO-268AA IGBT Type: PT Td (on/off) @ 25°C: 30ns/148ns Switching Energy: 1.5mJ (off) Test Condition: 960V, 15A, 10Ohm, 15V Gate Charge: 57 nC Part Status: Obsolete Current - Collector (Ic) (Max): 30 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 60 A Power - Max: 150 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||
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IXST24N60BD1 | IXYS |
Description: IGBT 600V 48A TO-268AA Packaging: Box Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 25 ns Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 24A Supplier Device Package: TO-268AA Td (on/off) @ 25°C: 50ns/150ns Switching Energy: 1.3mJ (off) Test Condition: 480V, 24A, 33Ohm, 15V Gate Charge: 41 nC Part Status: Obsolete Current - Collector (Ic) (Max): 48 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 96 A Power - Max: 150 W |
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В кошику од. на суму грн. | ||||
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IXST30N60BD1 | IXYS |
Description: IGBT 600V 55A 200W TO268 Packaging: Tube Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 50 ns Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 55A Supplier Device Package: TO-268AA Td (on/off) @ 25°C: 30ns/150ns Switching Energy: 1.5mJ (off) Test Condition: 480V, 30A, 4.7Ohm, 15V Gate Charge: 100 nC Current - Collector (Ic) (Max): 55 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 110 A Power - Max: 200 W |
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В кошику од. на суму грн. | ||||
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IXST30N60C | IXYS |
Description: IGBT 600V 55A 200W TO268 |
товару немає в наявності |
В кошику од. на суму грн. | ||||
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IXST30N60CD1 | IXYS |
Description: IGBT 600V 55A 200W TO268 |
товару немає в наявності |
В кошику од. на суму грн. | ||||
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IXST35N120B | IXYS |
Description: IGBT 1200V 70A 300W TO268 Packaging: Tube Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 35A Supplier Device Package: TO-268AA IGBT Type: PT Td (on/off) @ 25°C: 36ns/160ns Switching Energy: 5mJ (off) Test Condition: 960V, 35A, 5Ohm, 15V Gate Charge: 120 nC Part Status: Obsolete Current - Collector (Ic) (Max): 70 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 140 A Power - Max: 300 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||
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IXST40N60B | IXYS |
Description: IGBT PT 600V 75A TO268AA Packaging: Tube Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 40A Supplier Device Package: TO-268AA IGBT Type: PT Td (on/off) @ 25°C: 50ns/110ns Switching Energy: 1.8mJ (off) Test Condition: 480V, 40A, 2.7Ohm, 15V Gate Charge: 190 nC Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 150 A Power - Max: 280 W |
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В кошику од. на суму грн. | ||||
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IXST45N120B | IXYS |
Description: IGBT PT 1200V 75A TO-268AA Packaging: Tube Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 45A Supplier Device Package: TO-268AA IGBT Type: PT Td (on/off) @ 25°C: 36ns/360ns Switching Energy: 13mJ (off) Test Condition: 960V, 45A, 5Ohm, 15V Gate Charge: 120 nC Part Status: Obsolete Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 180 A Power - Max: 300 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||
.jpg "IXSX35N120BD1") |
IXSX35N120BD1 | IXYS |
Description: IGBT 1200V 70A 300W PLUS247 Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 40 ns Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 35A Supplier Device Package: PLUS247™-3 IGBT Type: PT Td (on/off) @ 25°C: 36ns/160ns Switching Energy: 5mJ (off) Test Condition: 960V, 35A, 5Ohm, 15V Gate Charge: 120 nC Part Status: Obsolete Current - Collector (Ic) (Max): 70 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 140 A Power - Max: 300 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||
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IXSX40N60BD1 | IXYS |
Description: IGBT 600V 75A PLUS247 Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 35 ns Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 40A Supplier Device Package: PLUS247™-3 Td (on/off) @ 25°C: 50ns/110ns Switching Energy: 1.8mJ (off) Test Condition: 480V, 40A, 2.7Ohm, 15V Gate Charge: 190 nC Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 150 A Power - Max: 280 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||
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IXSX40N60CD1 | IXYS |
Description: IGBT 600V 75A PLUS247 Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 35 ns Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A Supplier Device Package: PLUS247™-3 Td (on/off) @ 25°C: 50ns/70ns Switching Energy: 1mJ (off) Test Condition: 480V, 40A, 2.7Ohm, 15V Gate Charge: 190 nC Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 150 A Power - Max: 280 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||
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IXSX80N60B | IXYS |
Description: IGBT PT 600V 160A PLUS247 Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 80A Supplier Device Package: PLUS247™-3 IGBT Type: PT Td (on/off) @ 25°C: 60ns/140ns Switching Energy: 4.2mJ (off) Test Condition: 480V, 80A, 2.7Ohm, 15V Gate Charge: 240 nC Part Status: Obsolete Current - Collector (Ic) (Max): 160 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 300 A Power - Max: 500 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||
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IXTA05N100 | IXYS |
Description: MOSFET N-CH 1000V 750MA TO263 Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 750mA (Tc) Rds On (Max) @ Id, Vgs: 17Ohm @ 375mA, 10V Power Dissipation (Max): 40W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-263AA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 25 V |
на замовлення 800 шт: термін постачання 21-31 дні (днів) |
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IXTA110N055P | IXYS |
Description: MOSFET N-CH 55V 110A TO263 Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Rds On (Max) @ Id, Vgs: 13.5mOhm @ 500mA, 10V Power Dissipation (Max): 390W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 250µA Supplier Device Package: TO-263AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2210 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||
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IXTA110N055T | IXYS |
Description: MOSFET N-CH 55V 110A TO263 Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 25A, 10V Power Dissipation (Max): 230W (Tc) Vgs(th) (Max) @ Id: 4V @ 100µA Supplier Device Package: TO-263AA Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3080 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||
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IXTA110N055T7 | IXYS |
Description: MOSFET N-CH 55V 110A TO263-7 Packaging: Tube Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 25A, 10V Power Dissipation (Max): 230W (Tc) Vgs(th) (Max) @ Id: 4V @ 100µA Supplier Device Package: TO-263-7 (IXTA) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3080 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||
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IXTA130N10T7 | IXYS |
Description: MOSFET N-CH 100V 130A TO263 Packaging: Tube Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 130A (Tc) Rds On (Max) @ Id, Vgs: 9.1mOhm @ 25A, 10V Power Dissipation (Max): 360W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-263-7 (IXTA) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5080 pF @ 25 V |
на замовлення 350 шт: термін постачання 21-31 дні (днів) |
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IXTA152N085T | IXYS |
Description: MOSFET N-CH 85V 152A TO-263 |
товару немає в наявності |
В кошику од. на суму грн. | ||||
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IXTA152N085T7 | IXYS |
Description: MOSFET N-CH 85V 152A TO-263-7 |
товару немає в наявності |
В кошику од. на суму грн. | ||||
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IXTA160N085T | IXYS |
Description: MOSFET N-CH 85V 160A TO263 Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 160A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 50A, 10V Power Dissipation (Max): 360W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-263AA Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 85 V Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6400 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||
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IXTA180N055T | IXYS |
Description: MOSFET N-CH 55V 180A TO263 Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-263AA Drain to Source Voltage (Vdss): 55 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||
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IXTA180N085T | IXYS |
Description: MOSFET N-CH 85V 180A TO263 Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 25A, 10V Power Dissipation (Max): 430W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263AA Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 85 V Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||
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IXTA180N085T7 | IXYS |
Description: MOSFET N-CH 85V 180A TO263-7 Packaging: Tube Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 25A, 10V Power Dissipation (Max): 430W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263-7 (IXTA) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 85 V Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||
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IXTA182N055T | IXYS |
Description: MOSFET N-CH 55V 182A TO263 Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 182A (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 25A, 10V Power Dissipation (Max): 360W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263AA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4850 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||
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IXTA182N055T7 | IXYS |
Description: MOSFET N-CH 55V 182A TO263-7 Packaging: Tube Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 182A (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 25A, 10V Power Dissipation (Max): 360W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263-7 (IXTA) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4850 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. |
| IXKK85N60C |
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Виробник: IXYS
Description: MOSFET N-CH 600V 85A TO264A
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 55A, 10V
Vgs(th) (Max) @ Id: 4V @ 4mA
Supplier Device Package: TO-264AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 650 nC @ 10 V
Description: MOSFET N-CH 600V 85A TO264A
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 55A, 10V
Vgs(th) (Max) @ Id: 4V @ 4mA
Supplier Device Package: TO-264AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 650 nC @ 10 V
на замовлення 107 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 3237.80 грн |
| 25+ | 2183.79 грн |
| IXKN40N60C |
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Виробник: IXYS
Description: MOSFET N-CH 600V 40A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 500mA, 10V
Power Dissipation (Max): 290W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 2.5mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V
Description: MOSFET N-CH 600V 40A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 500mA, 10V
Power Dissipation (Max): 290W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 2.5mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V
на замовлення 7 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 2641.68 грн |
| IXKN45N80C |
|
Виробник: IXYS
Description: MOSFET N-CH 800V 44A SOT-227B
Description: MOSFET N-CH 800V 44A SOT-227B
товару немає в наявності
В кошику
од. на суму грн.
| IXKN75N60C |
|
Виробник: IXYS
Description: MOSFET N-CH 600V 75A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 50A, 10V
Power Dissipation (Max): 560W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 5mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 500 nC @ 10 V
Description: MOSFET N-CH 600V 75A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 50A, 10V
Power Dissipation (Max): 560W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 5mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 500 nC @ 10 V
товару немає в наявності
В кошику
од. на суму грн.
| IXKR25N80C |
Виробник: IXYS
Description: MOSFET N-CH 800V 25A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 18A, 10V
Vgs(th) (Max) @ Id: 4V @ 2mA
Supplier Device Package: ISOPLUS247™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 355 nC @ 10 V
Description: MOSFET N-CH 800V 25A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 18A, 10V
Vgs(th) (Max) @ Id: 4V @ 2mA
Supplier Device Package: ISOPLUS247™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 355 nC @ 10 V
товару немає в наявності
В кошику
од. на суму грн.
| IXKR40N60C |
|
Виробник: IXYS
Description: MOSFET N-CH 600V 38A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 25A, 10V
Vgs(th) (Max) @ Id: 3.9V @ 3mA
Supplier Device Package: ISOPLUS247™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V
Description: MOSFET N-CH 600V 38A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 25A, 10V
Vgs(th) (Max) @ Id: 3.9V @ 3mA
Supplier Device Package: ISOPLUS247™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V
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| IXRP15N120 |
|
Виробник: IXYS
Description: IGBT NPT 1200V 25A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 300 ns
Vce(on) (Max) @ Vge, Ic: 2.95V @ 15V, 10A
Supplier Device Package: TO-220-3
IGBT Type: NPT
Switching Energy: 1.1mJ (on), 130µJ (off)
Test Condition: 600V, 10A, 47Ohm, 15V
Gate Charge: 36 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 300 W
Description: IGBT NPT 1200V 25A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 300 ns
Vce(on) (Max) @ Vge, Ic: 2.95V @ 15V, 10A
Supplier Device Package: TO-220-3
IGBT Type: NPT
Switching Energy: 1.1mJ (on), 130µJ (off)
Test Condition: 600V, 10A, 47Ohm, 15V
Gate Charge: 36 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 300 W
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| IXS839AQ2 |
|
Виробник: IXYS
Description: IC MOSFET DRIVER SYNC BUCK 10QFN
Description: IC MOSFET DRIVER SYNC BUCK 10QFN
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| IXS839AQ2T/R |
|
Виробник: IXYS
Description: IC MOSFET DRIVER SYNC BUCK 10QFN
Description: IC MOSFET DRIVER SYNC BUCK 10QFN
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| IXS839BQ2 |
|
Виробник: IXYS
Description: IC MOSFET DRIVER SYNC BUCK 10QFN
Description: IC MOSFET DRIVER SYNC BUCK 10QFN
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| IXS839BQ2T/R |
|
Виробник: IXYS
Description: IC MOSFET DRIVER SYNC BUCK 10QFN
Description: IC MOSFET DRIVER SYNC BUCK 10QFN
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| IXS839S1 |
Виробник: IXYS
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 4.5V ~ 5.5V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 24 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 20ns, 15ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 2A, 4A
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 4.5V ~ 5.5V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 24 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 20ns, 15ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 2A, 4A
DigiKey Programmable: Not Verified
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| IXS839S1T/R |
Виробник: IXYS
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 4.5V ~ 5.5V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 24 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 20ns, 15ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 2A, 4A
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 4.5V ~ 5.5V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 24 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 20ns, 15ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 2A, 4A
DigiKey Programmable: Not Verified
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| IXSA15N120B |
Виробник: IXYS
Description: IGBT PT 1200V 30A TO-263AA
Packaging: Box
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 15A
Supplier Device Package: TO-263AA
IGBT Type: PT
Td (on/off) @ 25°C: 30ns/148ns
Switching Energy: 1.75mJ (off)
Test Condition: 960V, 15A, 10Ohm, 15V
Gate Charge: 57 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 150 W
Description: IGBT PT 1200V 30A TO-263AA
Packaging: Box
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 15A
Supplier Device Package: TO-263AA
IGBT Type: PT
Td (on/off) @ 25°C: 30ns/148ns
Switching Energy: 1.75mJ (off)
Test Condition: 960V, 15A, 10Ohm, 15V
Gate Charge: 57 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 150 W
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| IXSH15N120B |
Виробник: IXYS
Description: IGBT PT 1200V 30A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 15A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 30ns/148ns
Switching Energy: 1.5mJ (off)
Test Condition: 960V, 15A, 10Ohm, 15V
Gate Charge: 57 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 150 W
Description: IGBT PT 1200V 30A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 15A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 30ns/148ns
Switching Energy: 1.5mJ (off)
Test Condition: 960V, 15A, 10Ohm, 15V
Gate Charge: 57 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 150 W
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| IXSH15N120BD1 |
Виробник: IXYS
Description: IGBT PT 1200V 30A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 30 ns
Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 15A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 30ns/148ns
Switching Energy: 1.5mJ (off)
Test Condition: 960V, 15A, 10Ohm, 15V
Gate Charge: 57 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 150 W
Description: IGBT PT 1200V 30A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 30 ns
Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 15A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 30ns/148ns
Switching Energy: 1.5mJ (off)
Test Condition: 960V, 15A, 10Ohm, 15V
Gate Charge: 57 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 150 W
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| IXSH30N60BD1 |
Виробник: IXYS
Description: IGBT 600V 55A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 50 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 55A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 30ns/150ns
Switching Energy: 1.5mJ (off)
Test Condition: 480V, 30A, 4.7Ohm, 15V
Gate Charge: 100 nC
Current - Collector (Ic) (Max): 55 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 110 A
Power - Max: 200 W
Description: IGBT 600V 55A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 50 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 55A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 30ns/150ns
Switching Energy: 1.5mJ (off)
Test Condition: 480V, 30A, 4.7Ohm, 15V
Gate Charge: 100 nC
Current - Collector (Ic) (Max): 55 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 110 A
Power - Max: 200 W
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| IXSH35N120B |
Виробник: IXYS
Description: IGBT PT 1200V 70A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 35A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 36ns/160ns
Switching Energy: 5mJ (off)
Test Condition: 960V, 35A, 5Ohm, 15V
Gate Charge: 120 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 140 A
Power - Max: 300 W
Description: IGBT PT 1200V 70A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 35A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 36ns/160ns
Switching Energy: 5mJ (off)
Test Condition: 960V, 35A, 5Ohm, 15V
Gate Charge: 120 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 140 A
Power - Max: 300 W
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| IXSH35N140A |
|
Виробник: IXYS
Description: IGBT 1400V 70A 300W TO247
Description: IGBT 1400V 70A 300W TO247
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| IXSH40N60B |
Виробник: IXYS
Description: IGBT PT 600V 75A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 40A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 50ns/110ns
Switching Energy: 1.8mJ (off)
Test Condition: 480V, 40A, 2.7Ohm, 15V
Gate Charge: 190 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 280 W
Description: IGBT PT 600V 75A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 40A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 50ns/110ns
Switching Energy: 1.8mJ (off)
Test Condition: 480V, 40A, 2.7Ohm, 15V
Gate Charge: 190 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 280 W
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| IXSH45N100 |
Виробник: IXYS
Description: IGBT 1000V 75A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 45A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 80ns/400ns
Switching Energy: 15mJ (off)
Test Condition: 800V, 45A, 2.7Ohm, 15V
Gate Charge: 165 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 300 W
Description: IGBT 1000V 75A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 45A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 80ns/400ns
Switching Energy: 15mJ (off)
Test Condition: 800V, 45A, 2.7Ohm, 15V
Gate Charge: 165 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 300 W
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| IXSH45N120 |
Виробник: IXYS
Description: IGBT 1200V 75A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 45A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 80ns/400ns
Switching Energy: 21mJ (off)
Test Condition: 960V, 45A, 2.7Ohm, 15V
Gate Charge: 150 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 300 W
Description: IGBT 1200V 75A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 45A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 80ns/400ns
Switching Energy: 21mJ (off)
Test Condition: 960V, 45A, 2.7Ohm, 15V
Gate Charge: 150 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 300 W
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| IXSH45N120B |
Виробник: IXYS
Description: IGBT PT 1200V 75A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 45A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 36ns/360ns
Switching Energy: 13mJ (off)
Test Condition: 960V, 45A, 5Ohm, 15V
Gate Charge: 120 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 300 W
Description: IGBT PT 1200V 75A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 45A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 36ns/360ns
Switching Energy: 13mJ (off)
Test Condition: 960V, 45A, 5Ohm, 15V
Gate Charge: 120 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 300 W
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| IXSH50N60B |
Виробник: IXYS
Description: IGBT 600V 75A 250W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 50A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 70ns/150ns
Switching Energy: 3.3mJ (off)
Test Condition: 480V, 50A, 2.7Ohm, 15V
Gate Charge: 167 nC
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 250 W
Description: IGBT 600V 75A 250W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 50A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 70ns/150ns
Switching Energy: 3.3mJ (off)
Test Condition: 480V, 50A, 2.7Ohm, 15V
Gate Charge: 167 nC
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 250 W
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| IXSK35N120BD1 |
|
Виробник: IXYS
Description: IGBT 1200V 70A 300W TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 40 ns
Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 35A
Supplier Device Package: TO-264AA (IXSK)
IGBT Type: PT
Td (on/off) @ 25°C: 36ns/160ns
Switching Energy: 5mJ (off)
Test Condition: 960V, 35A, 5Ohm, 15V
Gate Charge: 120 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 140 A
Power - Max: 300 W
Description: IGBT 1200V 70A 300W TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 40 ns
Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 35A
Supplier Device Package: TO-264AA (IXSK)
IGBT Type: PT
Td (on/off) @ 25°C: 36ns/160ns
Switching Energy: 5mJ (off)
Test Condition: 960V, 35A, 5Ohm, 15V
Gate Charge: 120 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 140 A
Power - Max: 300 W
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| IXSK40N60BD1 |
Виробник: IXYS
Description: IGBT 600V 75A 280W TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 35 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 40A
Supplier Device Package: TO-264AA (IXSK)
Td (on/off) @ 25°C: 50ns/110ns
Switching Energy: 1.8mJ (off)
Test Condition: 480V, 40A, 2.7Ohm, 15V
Gate Charge: 190 nC
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 280 W
Description: IGBT 600V 75A 280W TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 35 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 40A
Supplier Device Package: TO-264AA (IXSK)
Td (on/off) @ 25°C: 50ns/110ns
Switching Energy: 1.8mJ (off)
Test Condition: 480V, 40A, 2.7Ohm, 15V
Gate Charge: 190 nC
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 280 W
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| IXSK40N60CD1 |
Виробник: IXYS
Description: IGBT 600V 75A 280W TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 35 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A
Supplier Device Package: TO-264AA (IXSK)
Td (on/off) @ 25°C: 50ns/70ns
Switching Energy: 1mJ (off)
Test Condition: 480V, 40A, 2.7Ohm, 15V
Gate Charge: 190 nC
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 280 W
Description: IGBT 600V 75A 280W TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 35 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A
Supplier Device Package: TO-264AA (IXSK)
Td (on/off) @ 25°C: 50ns/70ns
Switching Energy: 1mJ (off)
Test Condition: 480V, 40A, 2.7Ohm, 15V
Gate Charge: 190 nC
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 280 W
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| IXSK80N60B |
Виробник: IXYS
Description: IGBT 600V 160A 500W TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 80A
Supplier Device Package: TO-264AA (IXSK)
IGBT Type: PT
Td (on/off) @ 25°C: 60ns/140ns
Switching Energy: 4.2mJ (off)
Test Condition: 480V, 80A, 2.7Ohm, 15V
Gate Charge: 240 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 160 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 500 W
Description: IGBT 600V 160A 500W TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 80A
Supplier Device Package: TO-264AA (IXSK)
IGBT Type: PT
Td (on/off) @ 25°C: 60ns/140ns
Switching Energy: 4.2mJ (off)
Test Condition: 480V, 80A, 2.7Ohm, 15V
Gate Charge: 240 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 160 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 500 W
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| IXSN55N120A |
Виробник: IXYS
Description: IGBT MOD 1200V 110A 500W SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 55A
NTC Thermistor: No
Supplier Device Package: SOT-227B
Current - Collector (Ic) (Max): 110 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 500 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 8 nF @ 25 V
Description: IGBT MOD 1200V 110A 500W SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 55A
NTC Thermistor: No
Supplier Device Package: SOT-227B
Current - Collector (Ic) (Max): 110 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 500 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 8 nF @ 25 V
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| IXSN80N60BD1 |
Виробник: IXYS
Description: IGBT MOD 600V 160A 420W SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 80A
NTC Thermistor: No
Supplier Device Package: SOT-227B
Part Status: Obsolete
Current - Collector (Ic) (Max): 160 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 420 W
Current - Collector Cutoff (Max): 200 µA
Input Capacitance (Cies) @ Vce: 6.6 nF @ 25 V
Description: IGBT MOD 600V 160A 420W SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 80A
NTC Thermistor: No
Supplier Device Package: SOT-227B
Part Status: Obsolete
Current - Collector (Ic) (Max): 160 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 420 W
Current - Collector Cutoff (Max): 200 µA
Input Capacitance (Cies) @ Vce: 6.6 nF @ 25 V
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| IXSP15N120B |
Виробник: IXYS
Description: IGBT 1200V 30A TO-220-3
Packaging: Box
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 15A
Supplier Device Package: TO-220-3
Td (on/off) @ 25°C: 30ns/148ns
Switching Energy: 1.75mJ (off)
Test Condition: 960V, 15A, 10Ohm, 15V
Gate Charge: 57 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 150 W
Description: IGBT 1200V 30A TO-220-3
Packaging: Box
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 15A
Supplier Device Package: TO-220-3
Td (on/off) @ 25°C: 30ns/148ns
Switching Energy: 1.75mJ (off)
Test Condition: 960V, 15A, 10Ohm, 15V
Gate Charge: 57 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 150 W
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| IXSR35N120BD1 |
|
Виробник: IXYS
Description: IGBT 1200V 70A 250W ISOPLUS247
Packaging: Box
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 40 ns
Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 35A
Supplier Device Package: ISOPLUS247™
IGBT Type: PT
Td (on/off) @ 25°C: 36ns/160ns
Switching Energy: 5mJ (off)
Test Condition: 960V, 35A, 2.7Ohm, 15V
Gate Charge: 120 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 140 A
Power - Max: 250 W
Description: IGBT 1200V 70A 250W ISOPLUS247
Packaging: Box
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 40 ns
Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 35A
Supplier Device Package: ISOPLUS247™
IGBT Type: PT
Td (on/off) @ 25°C: 36ns/160ns
Switching Energy: 5mJ (off)
Test Condition: 960V, 35A, 2.7Ohm, 15V
Gate Charge: 120 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 140 A
Power - Max: 250 W
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| IXSR40N60BD1 |
Виробник: IXYS
Description: IGBT PT 600V 70A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 35 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 40A
Supplier Device Package: ISOPLUS247™
IGBT Type: PT
Td (on/off) @ 25°C: 50ns/110ns
Switching Energy: 1.8mJ (off)
Test Condition: 480V, 40A, 2.7Ohm, 15V
Gate Charge: 190 nC
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 170 W
Description: IGBT PT 600V 70A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 35 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 40A
Supplier Device Package: ISOPLUS247™
IGBT Type: PT
Td (on/off) @ 25°C: 50ns/110ns
Switching Energy: 1.8mJ (off)
Test Condition: 480V, 40A, 2.7Ohm, 15V
Gate Charge: 190 nC
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 170 W
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| IXSR40N60CD1 |
Виробник: IXYS
Description: IGBT PT 600V 62A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 35 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A
Supplier Device Package: ISOPLUS247™
IGBT Type: PT
Td (on/off) @ 25°C: 50ns/70ns
Switching Energy: 1mJ (off)
Test Condition: 480V, 40A, 2.7Ohm, 15V
Gate Charge: 190 nC
Current - Collector (Ic) (Max): 62 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 210 W
Description: IGBT PT 600V 62A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 35 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A
Supplier Device Package: ISOPLUS247™
IGBT Type: PT
Td (on/off) @ 25°C: 50ns/70ns
Switching Energy: 1mJ (off)
Test Condition: 480V, 40A, 2.7Ohm, 15V
Gate Charge: 190 nC
Current - Collector (Ic) (Max): 62 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 210 W
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| IXST15N120B |
Виробник: IXYS
Description: IGBT PT 1200V 30A TO-268AA
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 15A
Supplier Device Package: TO-268AA
IGBT Type: PT
Td (on/off) @ 25°C: 30ns/148ns
Switching Energy: 1.5mJ (off)
Test Condition: 960V, 15A, 10Ohm, 15V
Gate Charge: 57 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 150 W
Description: IGBT PT 1200V 30A TO-268AA
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 15A
Supplier Device Package: TO-268AA
IGBT Type: PT
Td (on/off) @ 25°C: 30ns/148ns
Switching Energy: 1.5mJ (off)
Test Condition: 960V, 15A, 10Ohm, 15V
Gate Charge: 57 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 150 W
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| IXST15N120BD1 |
Виробник: IXYS
Description: IGBT PT 1200V 30A TO-268AA
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 30 ns
Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 15A
Supplier Device Package: TO-268AA
IGBT Type: PT
Td (on/off) @ 25°C: 30ns/148ns
Switching Energy: 1.5mJ (off)
Test Condition: 960V, 15A, 10Ohm, 15V
Gate Charge: 57 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 150 W
Description: IGBT PT 1200V 30A TO-268AA
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 30 ns
Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 15A
Supplier Device Package: TO-268AA
IGBT Type: PT
Td (on/off) @ 25°C: 30ns/148ns
Switching Energy: 1.5mJ (off)
Test Condition: 960V, 15A, 10Ohm, 15V
Gate Charge: 57 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 150 W
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| IXST24N60BD1 |
Виробник: IXYS
Description: IGBT 600V 48A TO-268AA
Packaging: Box
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 24A
Supplier Device Package: TO-268AA
Td (on/off) @ 25°C: 50ns/150ns
Switching Energy: 1.3mJ (off)
Test Condition: 480V, 24A, 33Ohm, 15V
Gate Charge: 41 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 96 A
Power - Max: 150 W
Description: IGBT 600V 48A TO-268AA
Packaging: Box
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 24A
Supplier Device Package: TO-268AA
Td (on/off) @ 25°C: 50ns/150ns
Switching Energy: 1.3mJ (off)
Test Condition: 480V, 24A, 33Ohm, 15V
Gate Charge: 41 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 96 A
Power - Max: 150 W
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| IXST30N60BD1 |
|
Виробник: IXYS
Description: IGBT 600V 55A 200W TO268
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 50 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 55A
Supplier Device Package: TO-268AA
Td (on/off) @ 25°C: 30ns/150ns
Switching Energy: 1.5mJ (off)
Test Condition: 480V, 30A, 4.7Ohm, 15V
Gate Charge: 100 nC
Current - Collector (Ic) (Max): 55 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 110 A
Power - Max: 200 W
Description: IGBT 600V 55A 200W TO268
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 50 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 55A
Supplier Device Package: TO-268AA
Td (on/off) @ 25°C: 30ns/150ns
Switching Energy: 1.5mJ (off)
Test Condition: 480V, 30A, 4.7Ohm, 15V
Gate Charge: 100 nC
Current - Collector (Ic) (Max): 55 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 110 A
Power - Max: 200 W
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| IXST30N60C |
|
Виробник: IXYS
Description: IGBT 600V 55A 200W TO268
Description: IGBT 600V 55A 200W TO268
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| IXST30N60CD1 |
|
Виробник: IXYS
Description: IGBT 600V 55A 200W TO268
Description: IGBT 600V 55A 200W TO268
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| IXST35N120B |
|
Виробник: IXYS
Description: IGBT 1200V 70A 300W TO268
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 35A
Supplier Device Package: TO-268AA
IGBT Type: PT
Td (on/off) @ 25°C: 36ns/160ns
Switching Energy: 5mJ (off)
Test Condition: 960V, 35A, 5Ohm, 15V
Gate Charge: 120 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 140 A
Power - Max: 300 W
Description: IGBT 1200V 70A 300W TO268
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 35A
Supplier Device Package: TO-268AA
IGBT Type: PT
Td (on/off) @ 25°C: 36ns/160ns
Switching Energy: 5mJ (off)
Test Condition: 960V, 35A, 5Ohm, 15V
Gate Charge: 120 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 140 A
Power - Max: 300 W
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| IXST40N60B |
Виробник: IXYS
Description: IGBT PT 600V 75A TO268AA
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 40A
Supplier Device Package: TO-268AA
IGBT Type: PT
Td (on/off) @ 25°C: 50ns/110ns
Switching Energy: 1.8mJ (off)
Test Condition: 480V, 40A, 2.7Ohm, 15V
Gate Charge: 190 nC
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 280 W
Description: IGBT PT 600V 75A TO268AA
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 40A
Supplier Device Package: TO-268AA
IGBT Type: PT
Td (on/off) @ 25°C: 50ns/110ns
Switching Energy: 1.8mJ (off)
Test Condition: 480V, 40A, 2.7Ohm, 15V
Gate Charge: 190 nC
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 280 W
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| IXST45N120B |
Виробник: IXYS
Description: IGBT PT 1200V 75A TO-268AA
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 45A
Supplier Device Package: TO-268AA
IGBT Type: PT
Td (on/off) @ 25°C: 36ns/360ns
Switching Energy: 13mJ (off)
Test Condition: 960V, 45A, 5Ohm, 15V
Gate Charge: 120 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 300 W
Description: IGBT PT 1200V 75A TO-268AA
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 45A
Supplier Device Package: TO-268AA
IGBT Type: PT
Td (on/off) @ 25°C: 36ns/360ns
Switching Energy: 13mJ (off)
Test Condition: 960V, 45A, 5Ohm, 15V
Gate Charge: 120 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 300 W
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| IXSX35N120BD1 |
|
Виробник: IXYS
Description: IGBT 1200V 70A 300W PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 40 ns
Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 35A
Supplier Device Package: PLUS247™-3
IGBT Type: PT
Td (on/off) @ 25°C: 36ns/160ns
Switching Energy: 5mJ (off)
Test Condition: 960V, 35A, 5Ohm, 15V
Gate Charge: 120 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 140 A
Power - Max: 300 W
Description: IGBT 1200V 70A 300W PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 40 ns
Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 35A
Supplier Device Package: PLUS247™-3
IGBT Type: PT
Td (on/off) @ 25°C: 36ns/160ns
Switching Energy: 5mJ (off)
Test Condition: 960V, 35A, 5Ohm, 15V
Gate Charge: 120 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 140 A
Power - Max: 300 W
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| IXSX40N60BD1 |
Виробник: IXYS
Description: IGBT 600V 75A PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 35 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 40A
Supplier Device Package: PLUS247™-3
Td (on/off) @ 25°C: 50ns/110ns
Switching Energy: 1.8mJ (off)
Test Condition: 480V, 40A, 2.7Ohm, 15V
Gate Charge: 190 nC
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 280 W
Description: IGBT 600V 75A PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 35 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 40A
Supplier Device Package: PLUS247™-3
Td (on/off) @ 25°C: 50ns/110ns
Switching Energy: 1.8mJ (off)
Test Condition: 480V, 40A, 2.7Ohm, 15V
Gate Charge: 190 nC
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 280 W
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| IXSX40N60CD1 |
Виробник: IXYS
Description: IGBT 600V 75A PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 35 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A
Supplier Device Package: PLUS247™-3
Td (on/off) @ 25°C: 50ns/70ns
Switching Energy: 1mJ (off)
Test Condition: 480V, 40A, 2.7Ohm, 15V
Gate Charge: 190 nC
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 280 W
Description: IGBT 600V 75A PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 35 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A
Supplier Device Package: PLUS247™-3
Td (on/off) @ 25°C: 50ns/70ns
Switching Energy: 1mJ (off)
Test Condition: 480V, 40A, 2.7Ohm, 15V
Gate Charge: 190 nC
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 280 W
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| IXSX80N60B |
Виробник: IXYS
Description: IGBT PT 600V 160A PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 80A
Supplier Device Package: PLUS247™-3
IGBT Type: PT
Td (on/off) @ 25°C: 60ns/140ns
Switching Energy: 4.2mJ (off)
Test Condition: 480V, 80A, 2.7Ohm, 15V
Gate Charge: 240 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 160 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 500 W
Description: IGBT PT 600V 160A PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 80A
Supplier Device Package: PLUS247™-3
IGBT Type: PT
Td (on/off) @ 25°C: 60ns/140ns
Switching Energy: 4.2mJ (off)
Test Condition: 480V, 80A, 2.7Ohm, 15V
Gate Charge: 240 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 160 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 500 W
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| IXTA05N100 |
|
Виробник: IXYS
Description: MOSFET N-CH 1000V 750MA TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 750mA (Tc)
Rds On (Max) @ Id, Vgs: 17Ohm @ 375mA, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 25 V
Description: MOSFET N-CH 1000V 750MA TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 750mA (Tc)
Rds On (Max) @ Id, Vgs: 17Ohm @ 375mA, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 25 V
на замовлення 800 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 300+ | 171.61 грн |
| IXTA110N055P |
Виробник: IXYS
Description: MOSFET N-CH 55V 110A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 500mA, 10V
Power Dissipation (Max): 390W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2210 pF @ 25 V
Description: MOSFET N-CH 55V 110A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 500mA, 10V
Power Dissipation (Max): 390W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2210 pF @ 25 V
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| IXTA110N055T |
Виробник: IXYS
Description: MOSFET N-CH 55V 110A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 25A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: TO-263AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3080 pF @ 25 V
Description: MOSFET N-CH 55V 110A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 25A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: TO-263AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3080 pF @ 25 V
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| IXTA110N055T7 |
Виробник: IXYS
Description: MOSFET N-CH 55V 110A TO263-7
Packaging: Tube
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 25A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: TO-263-7 (IXTA)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3080 pF @ 25 V
Description: MOSFET N-CH 55V 110A TO263-7
Packaging: Tube
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 25A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: TO-263-7 (IXTA)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3080 pF @ 25 V
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| IXTA130N10T7 |
Виробник: IXYS
Description: MOSFET N-CH 100V 130A TO263
Packaging: Tube
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 25A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263-7 (IXTA)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5080 pF @ 25 V
Description: MOSFET N-CH 100V 130A TO263
Packaging: Tube
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 25A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263-7 (IXTA)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5080 pF @ 25 V
на замовлення 350 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 300+ | 174.66 грн |
| IXTA152N085T |
|
Виробник: IXYS
Description: MOSFET N-CH 85V 152A TO-263
Description: MOSFET N-CH 85V 152A TO-263
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| IXTA152N085T7 |
|
Виробник: IXYS
Description: MOSFET N-CH 85V 152A TO-263-7
Description: MOSFET N-CH 85V 152A TO-263-7
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| IXTA160N085T |
Виробник: IXYS
Description: MOSFET N-CH 85V 160A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 50A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-263AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 85 V
Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6400 pF @ 25 V
Description: MOSFET N-CH 85V 160A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 50A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-263AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 85 V
Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6400 pF @ 25 V
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| IXTA180N055T |
Виробник: IXYS
Description: MOSFET N-CH 55V 180A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-263AA
Drain to Source Voltage (Vdss): 55 V
Description: MOSFET N-CH 55V 180A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-263AA
Drain to Source Voltage (Vdss): 55 V
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| IXTA180N085T |
Виробник: IXYS
Description: MOSFET N-CH 85V 180A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 25A, 10V
Power Dissipation (Max): 430W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 85 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 25 V
Description: MOSFET N-CH 85V 180A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 25A, 10V
Power Dissipation (Max): 430W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 85 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 25 V
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| IXTA180N085T7 |
Виробник: IXYS
Description: MOSFET N-CH 85V 180A TO263-7
Packaging: Tube
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 25A, 10V
Power Dissipation (Max): 430W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7 (IXTA)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 85 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 25 V
Description: MOSFET N-CH 85V 180A TO263-7
Packaging: Tube
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 25A, 10V
Power Dissipation (Max): 430W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7 (IXTA)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 85 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 25 V
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| IXTA182N055T |
|
Виробник: IXYS
Description: MOSFET N-CH 55V 182A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 182A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 25A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4850 pF @ 25 V
Description: MOSFET N-CH 55V 182A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 182A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 25A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4850 pF @ 25 V
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В кошику
од. на суму грн.
| IXTA182N055T7 |
|
Виробник: IXYS
Description: MOSFET N-CH 55V 182A TO263-7
Packaging: Tube
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 182A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 25A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7 (IXTA)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4850 pF @ 25 V
Description: MOSFET N-CH 55V 182A TO263-7
Packaging: Tube
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 182A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 25A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7 (IXTA)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4850 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.