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LE7920-2DJC Microchip Technology LE7920_RevJ_V2.pdf Description: IC TELECOM INTERFACE 32PLCC
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LE79R70-1DJC Microchip Technology LE79R70_RevJ_V2.pdf Description: IC TELECOM INTERFACE 32PLCC
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LE79R70DJC Microchip Technology LE79R70_RevJ_V2.pdf Description: IC TELECOM INTERFACE 32PLCC
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LE79R79-1DJC Microchip Technology LE79R79_RevO_V2.pdf Description: IC TELECOM INTERFACE 32PLCC
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LE79R79-2DJC Microchip Technology LE79R79_RevO_V2.pdf Description: IC TELECOM INTERFACE 32PLCC
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LE79R79-3DJC Microchip Technology LE79R79_RevO_V2.pdf Description: IC TELECOM INTERFACE 32PLCC
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LE57D122BTCT Microchip Technology LE5712_RevG_V2.pdf Description: IC TELECOM INTERFACE 44TQFP
Packaging: Tape & Reel (TR)
Package / Case: 44-TQFP Exposed Pad
Mounting Type: Surface Mount
Function: Subscriber Line Interface Concept (SLIC)
Interface: 2-Wire
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.75V ~ 5.25V
Supplier Device Package: 44-TQFP-EP (10x10)
Number of Circuits: 2
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LE58QL021BVCT LE58QL021BVCT Microchip Technology LE58QL02_021_031_Ver9.pdf Description: IC TELECOM INTERFACE 44TQFP
Packaging: Tape & Reel (TR)
Package / Case: 44-TQFP
Mounting Type: Surface Mount
Function: Subscriber Line Interface Concept (SLIC)
Interface: PCM
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V
Supplier Device Package: 44-TQFP (10x10)
Part Status: Obsolete
Number of Circuits: 4
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LE58QL031DJCT Microchip Technology LE58QL02_021_031_Ver9.pdf Description: IC TELECOM INTERFACE 32PLCC
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LE78D110BVCT LE78D110BVCT Microchip Technology LE78D11_RevD_V2.pdf Description: IC TELECOM INTERFACE 44TQFP
Packaging: Tape & Reel (TR)
Package / Case: 44-TQFP
Mounting Type: Surface Mount
Function: Voice Over IP Processor
Interface: PCM
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V
Supplier Device Package: 44-TQFP (10x10)
Number of Circuits: 1
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LE7920-1DJCT Microchip Technology LE7920_RevJ_V2.pdf Description: IC TELECOM INTERFACE 32PLCC
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LE7920-2DJCT Microchip Technology LE7920_RevJ_V2.pdf Description: IC TELECOM INTERFACE 32PLCC
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LE792388TVCT LE792388TVCT Microchip Technology LE792388_Web.pdf Description: IC TELECOM INTERFACE 176LQFP
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LE79Q2281DVCT LE79Q2281DVCT Microchip Technology LE79228_RevG_V2.pdf Description: IC TELECOM INTERFACE 64TQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-TQFP
Mounting Type: Surface Mount
Function: ISLAC DEVICE
Interface: PCM
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V
Supplier Device Package: 64-TQFP (10x10)
Number of Circuits: 4
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LE79R70-1DJCT Microchip Technology LE79R70_RevJ_V2.pdf Description: IC TELECOM INTERFACE 32PLCC
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LE79R70DJCT Microchip Technology LE79R70_RevJ_V2.pdf Description: IC TELECOM INTERFACE 32PLCC
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LE79R79-1DJCT Microchip Technology LE79R79_RevO_V2.pdf Description: IC TELECOM INTERFACE 32PLCC
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LE79R79-2DJCT Microchip Technology LE79R79_RevO_V2.pdf Description: IC TELECOM INTERFACE 32PLCC
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LE79R79-3DJCT Microchip Technology LE79R79_RevO_V2.pdf Description: IC TELECOM INTERFACE 32PLCC
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LE87251NQCT Microchip Technology LE87251_Jun09.pdf Description: IC TELECOM INTERFACE 16QFN
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Le79Q2281DVC Le79Q2281DVC Microchip Technology LE79228_RevG_V2.pdf Description: IC TELECOM INTERFACE 64TQFP
Packaging: Tray
Package / Case: 64-TQFP
Mounting Type: Surface Mount
Function: ISLAC DEVICE
Interface: PCM
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V
Supplier Device Package: 64-TQFP (10x10)
Number of Circuits: 4
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LE58QL021FJCT Microchip Technology LE58QL02_021_031_Ver9.pdf Description: IC TELECOM INTERFACE 44PLCC
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ARF461AG ARF461AG Microchip Technology 8260-arf461ag-arf461bg-datasheet Description: RF MOSFET 50V TO247
Packaging: Bulk
Package / Case: TO-247-3
Current Rating (Amps): 25µA
Frequency: 65MHz
Configuration: N-Channel
Power - Output: 150W
Gain: 15dB
Technology: MOSFET (Metal Oxide)
Supplier Device Package: TO-247
Part Status: Active
Voltage - Rated: 1000 V
Voltage - Test: 50 V
на замовлення 30 шт:
термін постачання 21-31 дні (днів)
1+4150.72 грн
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VRF2944MP VRF2944MP Microchip Technology 5654-datasheets Description: MOSFET RF N-CH 170V 50A M177
Packaging: Bulk
Package / Case: M177
Current Rating (Amps): 50A
Frequency: 30MHz
Configuration: N-Channel
Power - Output: 400W
Gain: 25dB
Technology: MOSFET
Supplier Device Package: M177
Part Status: Active
Voltage - Rated: 170 V
Voltage - Test: 50 V
Current - Test: 250 mA
на замовлення 14 шт:
термін постачання 21-31 дні (днів)
1+32799.51 грн
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ARF461BG ARF461BG Microchip Technology 8260-arf461ag-arf461bg-datasheet Description: RF MOSFET 50V TO247
Packaging: Bulk
Package / Case: TO-247-3
Current Rating (Amps): 25µA
Frequency: 65MHz
Configuration: N-Channel
Power - Output: 150W
Gain: 15dB
Technology: MOSFET (Metal Oxide)
Supplier Device Package: TO-247
Part Status: Active
Voltage - Rated: 1000 V
Voltage - Test: 50 V
на замовлення 33 шт:
термін постачання 21-31 дні (днів)
1+4150.72 грн
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ARF463AG ARF463AG Microchip Technology 8262-arf463ag-arf463bg-datasheet Description: RF MOSFET 125V TO247
Packaging: Tube
Package / Case: TO-247-3
Current Rating (Amps): 9A
Frequency: 81.36MHz
Configuration: N-Channel
Power - Output: 100W
Gain: 15dB
Technology: MOSFET (Metal Oxide)
Supplier Device Package: TO-247
Part Status: Active
Voltage - Rated: 500 V
Voltage - Test: 125 V
Current - Test: 50 mA
на замовлення 105 шт:
термін постачання 21-31 дні (днів)
1+3166.29 грн
100+2095.19 грн
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ARF463AP1G ARF463AP1G Microchip Technology 8263-arf463ap1g-arf463bp1g-datasheet Description: RF MOSFET 125V TO247
Packaging: Bulk
Package / Case: TO-247-3
Current Rating (Amps): 9A
Frequency: 81.36MHz
Configuration: N-Channel
Power - Output: 100W
Gain: 15dB
Technology: MOSFET
Supplier Device Package: TO-247
Part Status: Active
Voltage - Rated: 500 V
Voltage - Test: 125 V
на замовлення 26 шт:
термін постачання 21-31 дні (днів)
1+3385.06 грн
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ARF463BG ARF463BG Microchip Technology 8262-arf463ag-arf463bg-datasheet Description: RF PWR MOSFET 500V 9A TO-247
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ARF463BP1G ARF463BP1G Microchip Technology 8263-arf463ap1g-arf463bp1g-datasheet Description: RF MOSFET 125V TO247
Packaging: Bulk
Package / Case: TO-247-3
Current Rating (Amps): 9A
Frequency: 81.36MHz
Configuration: N-Channel
Power - Output: 100W
Gain: 15dB
Technology: MOSFET
Supplier Device Package: TO-247
Part Status: Active
Voltage - Rated: 500 V
Voltage - Test: 125 V
на замовлення 16 шт:
термін постачання 21-31 дні (днів)
1+3385.06 грн
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ARF465BG ARF465BG Microchip Technology 8265-arf465ag-arf465bg-datasheet Description: RF PWR MOSFET 1200V 6A TO-247
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ARF466FL Microchip Technology index.php?option=com_docman&task=doc_download&gid=8273 Description: RF PWR MOSFET 1000V 13A
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ARF477FL ARF477FL Microchip Technology 8282-arf477fl-datasheet Description: RF MOSFET 150V
Packaging: Bulk
Current Rating (Amps): 15A
Frequency: 65MHz
Configuration: 2 N-Channel (Dual) Common Source
Power - Output: 400W
Gain: 16dB
Technology: MOSFET (Metal Oxide)
Part Status: Active
Voltage - Rated: 500 V
Voltage - Test: 150 V
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DRF1201 Microchip Technology index.php?option=com_docman&task=doc_download&gid=123790 Description: IC PWR DRIVER N-CHANNEL 1:1
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DRF1301 Microchip Technology 123794-drf1301-datasheet Description: IC PWR DRIVER N-CHANNEL 1:1
Packaging: Bulk
Package / Case: 18-SMD Module
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Output Configuration: Low Side
Rds On (Typ): 1Ohm
Input Type: Inverting, Non-Inverting
Voltage - Load: 10V ~ 15V
Current - Output (Max): 15A
Ratio - Input:Output: 1:1
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VRF141G Microchip Technology 11442-vrf141g-datasheet Description: RF PWR MOSFET 80V 40A DIE
Packaging: Bulk
Package / Case: SOT-540A
Current Rating (Amps): 40A
Frequency: 175MHz
Configuration: N-Channel
Power - Output: 300W
Gain: 14dB
Technology: MOSFET
Part Status: Active
Voltage - Rated: 80 V
Voltage - Test: 28 V
Current - Test: 500 mA
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APT25GLQ120JCU2 APT25GLQ120JCU2 Microchip Technology 125276-apt25glq120jcu2-rev2-datasheet Description: IGBT MOD 1200V 45A 170W SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis, Stud Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 25A
NTC Thermistor: No
Supplier Device Package: SOT-227
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 45 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 170 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 1.43 nF @ 25 V
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APT25GR120B APT25GR120B Microchip Technology 126293-apt25gr120b-apt25gr120s-datasheet Description: IGBT NPT 1200V 75A TO247
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 25A
Supplier Device Package: TO-247
IGBT Type: NPT
Td (on/off) @ 25°C: 16ns/122ns
Switching Energy: 742µJ (on), 427µJ (off)
Test Condition: 600V, 25A, 4.3Ohm, 15V
Gate Charge: 203 nC
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 521 W
на замовлення 118 шт:
термін постачання 21-31 дні (днів)
1+432.59 грн
100+338.40 грн
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APT25GR120S APT25GR120S Microchip Technology 126293-apt25gr120b-apt25gr120s-datasheet Description: IGBT NPT 1200V 75A D3PAK
Packaging: Bulk
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 25A
Supplier Device Package: D3Pak
IGBT Type: NPT
Td (on/off) @ 25°C: 16ns/122ns
Switching Energy: 742µJ (on), 427µJ (off)
Test Condition: 600V, 25A, 4.3Ohm, 15V
Gate Charge: 203 nC
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 521 W
на замовлення 268 шт:
термін постачання 21-31 дні (днів)
1+515.65 грн
100+403.45 грн
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APT40GLQ120JCU2 APT40GLQ120JCU2 Microchip Technology 125277-apt40glq120jcu2-rev0-datasheet Description: IGBT MOD 1200V 80A 312W SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis, Stud Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
NTC Thermistor: No
Supplier Device Package: SOT-227
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 312 W
Current - Collector Cutoff (Max): 25 µA
Input Capacitance (Cies) @ Vce: 2.3 nF @ 25 V
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APT60N60SCSG/TR APT60N60SCSG/TR Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: MOSFET N-CH 600V 60A D3PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 44A, 10V
Power Dissipation (Max): 431W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 3mA
Supplier Device Package: D3Pak
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
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APT60S20SG/TR APT60S20SG/TR Microchip Technology 7211-apt60s20bg-apt60s20sg-datasheet Description: DIODE SCHOTTKY 200V 75A D3PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Schottky
Current - Average Rectified (Io): 75A
Supplier Device Package: D3Pak
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 60 A
Current - Reverse Leakage @ Vr: 1 mA @ 200 V
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APTGLQ200H120G APTGLQ200H120G Microchip Technology 125286-aptglq200h120g-datasheet Description: IGBT MODULE 1200V 350A 1000W SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 200A
NTC Thermistor: No
Supplier Device Package: SP6
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 350 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1000 W
Current - Collector Cutoff (Max): 100 µA
Input Capacitance (Cies) @ Vce: 12.3 nF @ 25 V
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APTGLQ200HR120G APTGLQ200HR120G Microchip Technology 125288-aptglq200hr120g-datasheet Description: IGBT MODULE 1200V 300A 1000W SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Through Hole
Input: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 160A
NTC Thermistor: No
Supplier Device Package: SP6
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 300 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1000 W
Current - Collector Cutoff (Max): 200 µA
Input Capacitance (Cies) @ Vce: 9.2 nF @ 25 V
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APTGLQ300H65G Microchip Technology 125289-aptglq300h65g-datasheet Description: IGBT MODULE 650V 600A 1000W SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Through Hole
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 300A
NTC Thermistor: No
Supplier Device Package: SP6
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 1000 W
Current - Collector Cutoff (Max): 300 µA
Input Capacitance (Cies) @ Vce: 18.3 nF @ 25 V
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APTGLQ40DDA120CT3G Microchip Technology 125278-aptglq40dda120ct3g-datasheet Description: IGBT MODULE 1200V 75A 250W SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Through Hole
Input: Standard
Configuration: Dual Boost Chopper
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
NTC Thermistor: Yes
Supplier Device Package: SP6
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 250 W
Current - Collector Cutoff (Max): 100 µA
Input Capacitance (Cies) @ Vce: 2.3 nF @ 25 V
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APTGLQ600A65T6G Microchip Technology 125291-aptglq600a65t6g-datasheet Description: IGBT MODULE 650V 1200A 2000W SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Through Hole
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 600A
NTC Thermistor: Yes
Supplier Device Package: SP6
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 1200 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 2000 W
Current - Collector Cutoff (Max): 600 µA
Input Capacitance (Cies) @ Vce: 36.6 nF @ 25 V
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APTGLQ75H120T3G Microchip Technology 125282-aptglq75h120t3g-datasheet Description: IGBT MODULE 1200V 130A 385W SP1
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APTGLQ75H65T1G APTGLQ75H65T1G Microchip Technology 125281-aptglq75h65t1g-datasheet Description: IGBT MODULE 650V 150A 250W SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Through Hole
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: SP1
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 250 W
Current - Collector Cutoff (Max): 100 µA
Input Capacitance (Cies) @ Vce: 4.62 nF @ 25 V
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APTGT100TL170G Microchip Technology 123976-aptgt100tl170g-datasheet Description: IGBT MODULE 1700V 150A 560W SP6
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Level Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: SP6
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 560 W
Current - Collector Cutoff (Max): 350 µA
Input Capacitance (Cies) @ Vce: 9 nF @ 25 V
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APTM100TA35SCTPG Microchip Technology 125292-aptm100ta35sc-t-pg-2-datasheet Description: MOSFET 6N-CH 1000V 22A SP6-P
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 390W
Drain to Source Voltage (Vdss): 1000V (1kV)
Current - Continuous Drain (Id) @ 25°C: 22A
Input Capacitance (Ciss) (Max) @ Vds: 5200pF @ 25V
Rds On (Max) @ Id, Vgs: 420mOhm @ 11A, 10V
Gate Charge (Qg) (Max) @ Vgs: 186nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: SP6-P
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APTGT50DH60T1G Microchip Technology 7896-aptgt50dh60t1g-datasheet Description: IGBT MODULE 600V 80A 176W SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Input: Standard
Configuration: Asymmetrical Bridge
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: SP1
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 176 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 3.15 nF @ 25 V
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APTGT50TL60T3G Microchip Technology 7917-aptgt50tl60t3g-datasheet Description: IGBT MODULE 600V 80A 176W SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Level Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: SP3
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 176 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 3.15 nF @ 25 V
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APTGT75DH120T3G Microchip Technology 7947-aptgt75dh120t3g-datasheet Description: IGBT MODULE 1200V 110A 357W SP3
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APTLGT300A1208G Microchip Technology 123992-aptlgt300a1208g-datasheet Description: MOD IGBT 1200V 440A LP8
Packaging: Bulk
Package / Case: 6-PowerSIP Module
Mounting Type: Through Hole
Type: IGBT
Configuration: Half Bridge
Voltage - Isolation: 2500Vrms
Current: 440 A
Voltage: 1.2 kV
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APT26M100JCU3 APT26M100JCU3 Microchip Technology 6798-apt26m100jcu3-datasheet Description: MOSFET N-CH 1000V 26A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 396mOhm @ 18A, 10V
Power Dissipation (Max): 543W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: SOT-227
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 305 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7868 pF @ 25 V
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APTC60SKM24CT1G Microchip Technology 7354-aptc60skm24ct1g-datasheet Description: MOSFET N-CH 600V 95A SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 47.5A, 10V
Power Dissipation (Max): 462W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 5mA
Supplier Device Package: SP1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14400 pF @ 25 V
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APTM100UM65SCAVG Microchip Technology 8038-aptm100um65scavg-datasheet Description: MOSFET N-CH 1000V 145A SP6
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 145A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 72.5A, 10V
Power Dissipation (Max): 3250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 20mA
Supplier Device Package: SP6
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 1068 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 28500 pF @ 25 V
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APT60N60SCSG APT60N60SCSG Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: MOSFET N-CH 600V 60A D3PAK
Packaging: Bulk
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 44A, 10V
Power Dissipation (Max): 431W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 3mA
Supplier Device Package: D3Pak
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
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APT12057B2LLG APT12057B2LLG Microchip Technology 6611-apt12057b2llg-apt12057lllg-datasheet Description: MOSFET N-CH 1200V 22A T-MAX
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 570mOhm @ 11A, 10V
Power Dissipation (Max): 690W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: T-MAX™ [B2]
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 290 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6200 pF @ 25 V
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APT14M100S APT14M100S Microchip Technology 6627-apt14m100bg-apt14m100sg-datasheet Description: MOSFET N-CH 1000V 14A D3PAK
Packaging: Bulk
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 880mOhm @ 7A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: D3Pak
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3965 pF @ 25 V
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LE7920-2DJC LE7920_RevJ_V2.pdf
Виробник: Microchip Technology
Description: IC TELECOM INTERFACE 32PLCC
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LE79R70-1DJC LE79R70_RevJ_V2.pdf
Виробник: Microchip Technology
Description: IC TELECOM INTERFACE 32PLCC
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LE79R70DJC LE79R70_RevJ_V2.pdf
Виробник: Microchip Technology
Description: IC TELECOM INTERFACE 32PLCC
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LE79R79-1DJC LE79R79_RevO_V2.pdf
Виробник: Microchip Technology
Description: IC TELECOM INTERFACE 32PLCC
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LE79R79-2DJC LE79R79_RevO_V2.pdf
Виробник: Microchip Technology
Description: IC TELECOM INTERFACE 32PLCC
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LE79R79-3DJC LE79R79_RevO_V2.pdf
Виробник: Microchip Technology
Description: IC TELECOM INTERFACE 32PLCC
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LE57D122BTCT LE5712_RevG_V2.pdf
Виробник: Microchip Technology
Description: IC TELECOM INTERFACE 44TQFP
Packaging: Tape & Reel (TR)
Package / Case: 44-TQFP Exposed Pad
Mounting Type: Surface Mount
Function: Subscriber Line Interface Concept (SLIC)
Interface: 2-Wire
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.75V ~ 5.25V
Supplier Device Package: 44-TQFP-EP (10x10)
Number of Circuits: 2
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LE58QL021BVCT LE58QL02_021_031_Ver9.pdf
LE58QL021BVCT
Виробник: Microchip Technology
Description: IC TELECOM INTERFACE 44TQFP
Packaging: Tape & Reel (TR)
Package / Case: 44-TQFP
Mounting Type: Surface Mount
Function: Subscriber Line Interface Concept (SLIC)
Interface: PCM
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V
Supplier Device Package: 44-TQFP (10x10)
Part Status: Obsolete
Number of Circuits: 4
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LE58QL031DJCT LE58QL02_021_031_Ver9.pdf
Виробник: Microchip Technology
Description: IC TELECOM INTERFACE 32PLCC
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LE78D110BVCT LE78D11_RevD_V2.pdf
LE78D110BVCT
Виробник: Microchip Technology
Description: IC TELECOM INTERFACE 44TQFP
Packaging: Tape & Reel (TR)
Package / Case: 44-TQFP
Mounting Type: Surface Mount
Function: Voice Over IP Processor
Interface: PCM
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V
Supplier Device Package: 44-TQFP (10x10)
Number of Circuits: 1
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LE7920-1DJCT LE7920_RevJ_V2.pdf
Виробник: Microchip Technology
Description: IC TELECOM INTERFACE 32PLCC
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LE7920-2DJCT LE7920_RevJ_V2.pdf
Виробник: Microchip Technology
Description: IC TELECOM INTERFACE 32PLCC
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LE792388TVCT LE792388_Web.pdf
LE792388TVCT
Виробник: Microchip Technology
Description: IC TELECOM INTERFACE 176LQFP
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LE79Q2281DVCT LE79228_RevG_V2.pdf
LE79Q2281DVCT
Виробник: Microchip Technology
Description: IC TELECOM INTERFACE 64TQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-TQFP
Mounting Type: Surface Mount
Function: ISLAC DEVICE
Interface: PCM
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V
Supplier Device Package: 64-TQFP (10x10)
Number of Circuits: 4
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LE79R70-1DJCT LE79R70_RevJ_V2.pdf
Виробник: Microchip Technology
Description: IC TELECOM INTERFACE 32PLCC
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LE79R70DJCT LE79R70_RevJ_V2.pdf
Виробник: Microchip Technology
Description: IC TELECOM INTERFACE 32PLCC
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LE79R79-1DJCT LE79R79_RevO_V2.pdf
Виробник: Microchip Technology
Description: IC TELECOM INTERFACE 32PLCC
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LE79R79-2DJCT LE79R79_RevO_V2.pdf
Виробник: Microchip Technology
Description: IC TELECOM INTERFACE 32PLCC
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LE79R79-3DJCT LE79R79_RevO_V2.pdf
Виробник: Microchip Technology
Description: IC TELECOM INTERFACE 32PLCC
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LE87251NQCT LE87251_Jun09.pdf
Виробник: Microchip Technology
Description: IC TELECOM INTERFACE 16QFN
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Le79Q2281DVC LE79228_RevG_V2.pdf
Le79Q2281DVC
Виробник: Microchip Technology
Description: IC TELECOM INTERFACE 64TQFP
Packaging: Tray
Package / Case: 64-TQFP
Mounting Type: Surface Mount
Function: ISLAC DEVICE
Interface: PCM
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V
Supplier Device Package: 64-TQFP (10x10)
Number of Circuits: 4
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LE58QL021FJCT LE58QL02_021_031_Ver9.pdf
Виробник: Microchip Technology
Description: IC TELECOM INTERFACE 44PLCC
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ARF461AG 8260-arf461ag-arf461bg-datasheet
ARF461AG
Виробник: Microchip Technology
Description: RF MOSFET 50V TO247
Packaging: Bulk
Package / Case: TO-247-3
Current Rating (Amps): 25µA
Frequency: 65MHz
Configuration: N-Channel
Power - Output: 150W
Gain: 15dB
Technology: MOSFET (Metal Oxide)
Supplier Device Package: TO-247
Part Status: Active
Voltage - Rated: 1000 V
Voltage - Test: 50 V
на замовлення 30 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+4150.72 грн
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VRF2944MP 5654-datasheets
VRF2944MP
Виробник: Microchip Technology
Description: MOSFET RF N-CH 170V 50A M177
Packaging: Bulk
Package / Case: M177
Current Rating (Amps): 50A
Frequency: 30MHz
Configuration: N-Channel
Power - Output: 400W
Gain: 25dB
Technology: MOSFET
Supplier Device Package: M177
Part Status: Active
Voltage - Rated: 170 V
Voltage - Test: 50 V
Current - Test: 250 mA
на замовлення 14 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+32799.51 грн
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ARF461BG 8260-arf461ag-arf461bg-datasheet
ARF461BG
Виробник: Microchip Technology
Description: RF MOSFET 50V TO247
Packaging: Bulk
Package / Case: TO-247-3
Current Rating (Amps): 25µA
Frequency: 65MHz
Configuration: N-Channel
Power - Output: 150W
Gain: 15dB
Technology: MOSFET (Metal Oxide)
Supplier Device Package: TO-247
Part Status: Active
Voltage - Rated: 1000 V
Voltage - Test: 50 V
на замовлення 33 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+4150.72 грн
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ARF463AG 8262-arf463ag-arf463bg-datasheet
ARF463AG
Виробник: Microchip Technology
Description: RF MOSFET 125V TO247
Packaging: Tube
Package / Case: TO-247-3
Current Rating (Amps): 9A
Frequency: 81.36MHz
Configuration: N-Channel
Power - Output: 100W
Gain: 15dB
Technology: MOSFET (Metal Oxide)
Supplier Device Package: TO-247
Part Status: Active
Voltage - Rated: 500 V
Voltage - Test: 125 V
Current - Test: 50 mA
на замовлення 105 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+3166.29 грн
100+2095.19 грн
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ARF463AP1G 8263-arf463ap1g-arf463bp1g-datasheet
ARF463AP1G
Виробник: Microchip Technology
Description: RF MOSFET 125V TO247
Packaging: Bulk
Package / Case: TO-247-3
Current Rating (Amps): 9A
Frequency: 81.36MHz
Configuration: N-Channel
Power - Output: 100W
Gain: 15dB
Technology: MOSFET
Supplier Device Package: TO-247
Part Status: Active
Voltage - Rated: 500 V
Voltage - Test: 125 V
на замовлення 26 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+3385.06 грн
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ARF463BG 8262-arf463ag-arf463bg-datasheet
ARF463BG
Виробник: Microchip Technology
Description: RF PWR MOSFET 500V 9A TO-247
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ARF463BP1G 8263-arf463ap1g-arf463bp1g-datasheet
ARF463BP1G
Виробник: Microchip Technology
Description: RF MOSFET 125V TO247
Packaging: Bulk
Package / Case: TO-247-3
Current Rating (Amps): 9A
Frequency: 81.36MHz
Configuration: N-Channel
Power - Output: 100W
Gain: 15dB
Technology: MOSFET
Supplier Device Package: TO-247
Part Status: Active
Voltage - Rated: 500 V
Voltage - Test: 125 V
на замовлення 16 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+3385.06 грн
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ARF465BG 8265-arf465ag-arf465bg-datasheet
ARF465BG
Виробник: Microchip Technology
Description: RF PWR MOSFET 1200V 6A TO-247
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ARF466FL index.php?option=com_docman&task=doc_download&gid=8273
Виробник: Microchip Technology
Description: RF PWR MOSFET 1000V 13A
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ARF477FL 8282-arf477fl-datasheet
ARF477FL
Виробник: Microchip Technology
Description: RF MOSFET 150V
Packaging: Bulk
Current Rating (Amps): 15A
Frequency: 65MHz
Configuration: 2 N-Channel (Dual) Common Source
Power - Output: 400W
Gain: 16dB
Technology: MOSFET (Metal Oxide)
Part Status: Active
Voltage - Rated: 500 V
Voltage - Test: 150 V
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DRF1201 index.php?option=com_docman&task=doc_download&gid=123790
Виробник: Microchip Technology
Description: IC PWR DRIVER N-CHANNEL 1:1
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DRF1301 123794-drf1301-datasheet
Виробник: Microchip Technology
Description: IC PWR DRIVER N-CHANNEL 1:1
Packaging: Bulk
Package / Case: 18-SMD Module
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Output Configuration: Low Side
Rds On (Typ): 1Ohm
Input Type: Inverting, Non-Inverting
Voltage - Load: 10V ~ 15V
Current - Output (Max): 15A
Ratio - Input:Output: 1:1
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VRF141G 11442-vrf141g-datasheet
Виробник: Microchip Technology
Description: RF PWR MOSFET 80V 40A DIE
Packaging: Bulk
Package / Case: SOT-540A
Current Rating (Amps): 40A
Frequency: 175MHz
Configuration: N-Channel
Power - Output: 300W
Gain: 14dB
Technology: MOSFET
Part Status: Active
Voltage - Rated: 80 V
Voltage - Test: 28 V
Current - Test: 500 mA
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APT25GLQ120JCU2 125276-apt25glq120jcu2-rev2-datasheet
APT25GLQ120JCU2
Виробник: Microchip Technology
Description: IGBT MOD 1200V 45A 170W SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis, Stud Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 25A
NTC Thermistor: No
Supplier Device Package: SOT-227
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 45 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 170 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 1.43 nF @ 25 V
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APT25GR120B 126293-apt25gr120b-apt25gr120s-datasheet
APT25GR120B
Виробник: Microchip Technology
Description: IGBT NPT 1200V 75A TO247
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 25A
Supplier Device Package: TO-247
IGBT Type: NPT
Td (on/off) @ 25°C: 16ns/122ns
Switching Energy: 742µJ (on), 427µJ (off)
Test Condition: 600V, 25A, 4.3Ohm, 15V
Gate Charge: 203 nC
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 521 W
на замовлення 118 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+432.59 грн
100+338.40 грн
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APT25GR120S 126293-apt25gr120b-apt25gr120s-datasheet
APT25GR120S
Виробник: Microchip Technology
Description: IGBT NPT 1200V 75A D3PAK
Packaging: Bulk
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 25A
Supplier Device Package: D3Pak
IGBT Type: NPT
Td (on/off) @ 25°C: 16ns/122ns
Switching Energy: 742µJ (on), 427µJ (off)
Test Condition: 600V, 25A, 4.3Ohm, 15V
Gate Charge: 203 nC
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 521 W
на замовлення 268 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+515.65 грн
100+403.45 грн
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APT40GLQ120JCU2 125277-apt40glq120jcu2-rev0-datasheet
APT40GLQ120JCU2
Виробник: Microchip Technology
Description: IGBT MOD 1200V 80A 312W SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis, Stud Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
NTC Thermistor: No
Supplier Device Package: SOT-227
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 312 W
Current - Collector Cutoff (Max): 25 µA
Input Capacitance (Cies) @ Vce: 2.3 nF @ 25 V
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APT60N60SCSG/TR High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
APT60N60SCSG/TR
Виробник: Microchip Technology
Description: MOSFET N-CH 600V 60A D3PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 44A, 10V
Power Dissipation (Max): 431W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 3mA
Supplier Device Package: D3Pak
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
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APT60S20SG/TR 7211-apt60s20bg-apt60s20sg-datasheet
APT60S20SG/TR
Виробник: Microchip Technology
Description: DIODE SCHOTTKY 200V 75A D3PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Schottky
Current - Average Rectified (Io): 75A
Supplier Device Package: D3Pak
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 60 A
Current - Reverse Leakage @ Vr: 1 mA @ 200 V
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APTGLQ200H120G 125286-aptglq200h120g-datasheet
APTGLQ200H120G
Виробник: Microchip Technology
Description: IGBT MODULE 1200V 350A 1000W SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 200A
NTC Thermistor: No
Supplier Device Package: SP6
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 350 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1000 W
Current - Collector Cutoff (Max): 100 µA
Input Capacitance (Cies) @ Vce: 12.3 nF @ 25 V
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APTGLQ200HR120G 125288-aptglq200hr120g-datasheet
APTGLQ200HR120G
Виробник: Microchip Technology
Description: IGBT MODULE 1200V 300A 1000W SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Through Hole
Input: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 160A
NTC Thermistor: No
Supplier Device Package: SP6
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 300 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1000 W
Current - Collector Cutoff (Max): 200 µA
Input Capacitance (Cies) @ Vce: 9.2 nF @ 25 V
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APTGLQ300H65G 125289-aptglq300h65g-datasheet
Виробник: Microchip Technology
Description: IGBT MODULE 650V 600A 1000W SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Through Hole
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 300A
NTC Thermistor: No
Supplier Device Package: SP6
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 1000 W
Current - Collector Cutoff (Max): 300 µA
Input Capacitance (Cies) @ Vce: 18.3 nF @ 25 V
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APTGLQ40DDA120CT3G 125278-aptglq40dda120ct3g-datasheet
Виробник: Microchip Technology
Description: IGBT MODULE 1200V 75A 250W SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Through Hole
Input: Standard
Configuration: Dual Boost Chopper
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
NTC Thermistor: Yes
Supplier Device Package: SP6
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 250 W
Current - Collector Cutoff (Max): 100 µA
Input Capacitance (Cies) @ Vce: 2.3 nF @ 25 V
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APTGLQ600A65T6G 125291-aptglq600a65t6g-datasheet
Виробник: Microchip Technology
Description: IGBT MODULE 650V 1200A 2000W SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Through Hole
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 600A
NTC Thermistor: Yes
Supplier Device Package: SP6
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 1200 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 2000 W
Current - Collector Cutoff (Max): 600 µA
Input Capacitance (Cies) @ Vce: 36.6 nF @ 25 V
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APTGLQ75H120T3G 125282-aptglq75h120t3g-datasheet
Виробник: Microchip Technology
Description: IGBT MODULE 1200V 130A 385W SP1
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APTGLQ75H65T1G 125281-aptglq75h65t1g-datasheet
APTGLQ75H65T1G
Виробник: Microchip Technology
Description: IGBT MODULE 650V 150A 250W SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Through Hole
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: SP1
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 250 W
Current - Collector Cutoff (Max): 100 µA
Input Capacitance (Cies) @ Vce: 4.62 nF @ 25 V
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APTGT100TL170G 123976-aptgt100tl170g-datasheet
Виробник: Microchip Technology
Description: IGBT MODULE 1700V 150A 560W SP6
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Level Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: SP6
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 560 W
Current - Collector Cutoff (Max): 350 µA
Input Capacitance (Cies) @ Vce: 9 nF @ 25 V
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APTM100TA35SCTPG 125292-aptm100ta35sc-t-pg-2-datasheet
Виробник: Microchip Technology
Description: MOSFET 6N-CH 1000V 22A SP6-P
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 390W
Drain to Source Voltage (Vdss): 1000V (1kV)
Current - Continuous Drain (Id) @ 25°C: 22A
Input Capacitance (Ciss) (Max) @ Vds: 5200pF @ 25V
Rds On (Max) @ Id, Vgs: 420mOhm @ 11A, 10V
Gate Charge (Qg) (Max) @ Vgs: 186nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: SP6-P
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APTGT50DH60T1G 7896-aptgt50dh60t1g-datasheet
Виробник: Microchip Technology
Description: IGBT MODULE 600V 80A 176W SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Input: Standard
Configuration: Asymmetrical Bridge
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: SP1
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 176 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 3.15 nF @ 25 V
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APTGT50TL60T3G 7917-aptgt50tl60t3g-datasheet
Виробник: Microchip Technology
Description: IGBT MODULE 600V 80A 176W SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Level Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: SP3
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 176 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 3.15 nF @ 25 V
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APTGT75DH120T3G 7947-aptgt75dh120t3g-datasheet
Виробник: Microchip Technology
Description: IGBT MODULE 1200V 110A 357W SP3
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APTLGT300A1208G 123992-aptlgt300a1208g-datasheet
Виробник: Microchip Technology
Description: MOD IGBT 1200V 440A LP8
Packaging: Bulk
Package / Case: 6-PowerSIP Module
Mounting Type: Through Hole
Type: IGBT
Configuration: Half Bridge
Voltage - Isolation: 2500Vrms
Current: 440 A
Voltage: 1.2 kV
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APT26M100JCU3 6798-apt26m100jcu3-datasheet
APT26M100JCU3
Виробник: Microchip Technology
Description: MOSFET N-CH 1000V 26A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 396mOhm @ 18A, 10V
Power Dissipation (Max): 543W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: SOT-227
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 305 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7868 pF @ 25 V
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APTC60SKM24CT1G 7354-aptc60skm24ct1g-datasheet
Виробник: Microchip Technology
Description: MOSFET N-CH 600V 95A SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 47.5A, 10V
Power Dissipation (Max): 462W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 5mA
Supplier Device Package: SP1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14400 pF @ 25 V
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APTM100UM65SCAVG 8038-aptm100um65scavg-datasheet
Виробник: Microchip Technology
Description: MOSFET N-CH 1000V 145A SP6
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 145A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 72.5A, 10V
Power Dissipation (Max): 3250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 20mA
Supplier Device Package: SP6
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 1068 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 28500 pF @ 25 V
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APT60N60SCSG High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
APT60N60SCSG
Виробник: Microchip Technology
Description: MOSFET N-CH 600V 60A D3PAK
Packaging: Bulk
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 44A, 10V
Power Dissipation (Max): 431W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 3mA
Supplier Device Package: D3Pak
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
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APT12057B2LLG 6611-apt12057b2llg-apt12057lllg-datasheet
APT12057B2LLG
Виробник: Microchip Technology
Description: MOSFET N-CH 1200V 22A T-MAX
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 570mOhm @ 11A, 10V
Power Dissipation (Max): 690W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: T-MAX™ [B2]
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 290 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6200 pF @ 25 V
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APT14M100S 6627-apt14m100bg-apt14m100sg-datasheet
APT14M100S
Виробник: Microchip Technology
Description: MOSFET N-CH 1000V 14A D3PAK
Packaging: Bulk
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 880mOhm @ 7A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: D3Pak
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3965 pF @ 25 V
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