Продукція > MICROCHIP TECHNOLOGY > Всі товари виробника MICROCHIP TECHNOLOGY (343135) > Сторінка 792 з 5719
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APT40GL120JU3 | Microchip Technology |
Description: IGBT MOD 1200V 65A 220W SOT227Packaging: Bulk Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis, Stud Mount Input: Standard Configuration: Single Operating Temperature: -55°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 35A NTC Thermistor: No Supplier Device Package: SOT-227 IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 65 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 220 W Current - Collector Cutoff (Max): 250 µA Input Capacitance (Cies) @ Vce: 1.95 nF @ 25 V |
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| APTGF150A60T3AG | Microchip Technology |
Description: IGBT MODULE 600V 230A 833W SP3Packaging: Bulk Package / Case: SP3 Mounting Type: Chassis Mount Input: Standard Configuration: Half Bridge Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 200A NTC Thermistor: Yes Supplier Device Package: SP3 IGBT Type: NPT Part Status: Obsolete Current - Collector (Ic) (Max): 230 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 833 W Current - Collector Cutoff (Max): 350 µA Input Capacitance (Cies) @ Vce: 9 nF @ 25 V |
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| APTGF50DH120T3G | Microchip Technology |
Description: IGBT MODULE 1200V 70A 312W SP3Packaging: Bulk Package / Case: SP3 Mounting Type: Chassis Mount Input: Standard Configuration: Asymmetrical Bridge Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 50A NTC Thermistor: Yes Supplier Device Package: SP3 IGBT Type: NPT Current - Collector (Ic) (Max): 70 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 312 W Current - Collector Cutoff (Max): 250 µA Input Capacitance (Cies) @ Vce: 3.45 nF @ 25 V |
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| APTGF50DSK120T3G | Microchip Technology |
Description: IGBT MODULE 1200V 70A 312W SP3Packaging: Bulk Package / Case: SP3 Mounting Type: Chassis Mount Input: Standard Configuration: Dual Buck Chopper Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 50A NTC Thermistor: Yes Supplier Device Package: SP3 IGBT Type: NPT Current - Collector (Ic) (Max): 70 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 312 W Current - Collector Cutoff (Max): 250 µA Input Capacitance (Cies) @ Vce: 3.45 nF @ 25 V |
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| APTGL120TDU120TPG | Microchip Technology |
Description: IGBT MODULE 1200V 140A 517W SP6PPackaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Triple, Dual - Common Source Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 100A NTC Thermistor: Yes Supplier Device Package: SP6-P IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 140 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 517 W Current - Collector Cutoff (Max): 250 µA Input Capacitance (Cies) @ Vce: 6.2 nF @ 25 V |
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| APTGL40H120T1G | Microchip Technology |
Description: IGBT MODULE 1200V 65A 220W SP1 Packaging: Bulk Package / Case: SP1 Mounting Type: Chassis Mount Input: Standard Configuration: Full Bridge Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 35A NTC Thermistor: Yes Supplier Device Package: SP1 IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 65 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 220 W Current - Collector Cutoff (Max): 250 µA Input Capacitance (Cies) @ Vce: 1.95 nF @ 25 V |
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| APTGL40X120T3G | Microchip Technology |
Description: IGBT MODULE 1200V 65A 220W SP3Packaging: Bulk Package / Case: SP3 Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 35A NTC Thermistor: Yes Supplier Device Package: SP3 IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 65 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 220 W Current - Collector Cutoff (Max): 250 µA Input Capacitance (Cies) @ Vce: 1.95 nF @ 25 V |
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| APTGL90A120T1G | Microchip Technology |
Description: IGBT MODULE 1200V 110A 385W SP1Packaging: Bulk Package / Case: SP1 Mounting Type: Through Hole Input: Standard Configuration: Half Bridge Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 75A NTC Thermistor: Yes Supplier Device Package: SP1 IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 110 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 385 W Current - Collector Cutoff (Max): 250 µA Input Capacitance (Cies) @ Vce: 4.4 nF @ 25 V |
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| APTGL90DA120T1G | Microchip Technology |
Description: IGBT MODULE 1200V 110A 385W SP1Packaging: Bulk Package / Case: SP1 Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 75A NTC Thermistor: Yes Supplier Device Package: SP1 IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 110 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 385 W Current - Collector Cutoff (Max): 250 µA Input Capacitance (Cies) @ Vce: 4.4 nF @ 25 V |
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APT90DR160HJ | Microchip Technology |
Description: BRIDGE RECT 1PHASE 1.6KV SOT-227Packaging: Bulk Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: SOT-227 Voltage - Peak Reverse (Max): 1.6 kV Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 90 A Current - Reverse Leakage @ Vr: 50 µA @ 1600 V |
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| APTGL90DDA120T3G | Microchip Technology |
Description: IGBT MODULE 1200V 110A 385W SP3Packaging: Bulk Package / Case: SP3 Mounting Type: Chassis Mount Input: Standard Configuration: Dual Boost Chopper Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 75A NTC Thermistor: Yes Supplier Device Package: SP3 IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 110 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 385 W Current - Collector Cutoff (Max): 250 µA Input Capacitance (Cies) @ Vce: 4.4 nF @ 25 V |
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| APTGL90DSK120T3G | Microchip Technology |
Description: IGBT MODULE 1200V 110A 385W SP3Packaging: Bulk Package / Case: SP3 Mounting Type: Chassis Mount Input: Standard Configuration: Dual Buck Chopper Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 75A NTC Thermistor: Yes Supplier Device Package: SP3 IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 110 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 385 W Current - Collector Cutoff (Max): 250 µA Input Capacitance (Cies) @ Vce: 4.4 nF @ 25 V |
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| APTGL90H120T3G | Microchip Technology |
Description: IGBT MODULE 1200V 110A 385W SP3Packaging: Bulk Package / Case: SP3 Mounting Type: Chassis Mount Input: Standard Configuration: Full Bridge Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 75A NTC Thermistor: Yes Supplier Device Package: SP3 IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 110 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 385 W Current - Collector Cutoff (Max): 250 µA Input Capacitance (Cies) @ Vce: 4.4 nF @ 25 V |
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APTGT200DA60T3AG | Microchip Technology |
Description: IGBT MODULE 600V 290A 750W SP3Packaging: Bulk Package / Case: SP3 Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 200A NTC Thermistor: Yes Supplier Device Package: SP3 IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 290 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 750 W Current - Collector Cutoff (Max): 250 µA Input Capacitance (Cies) @ Vce: 12.3 nF @ 25 V |
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| APTGT200SK60T3AG | Microchip Technology |
Description: IGBT MODULE 600V 290A 750W SP3Packaging: Bulk Package / Case: SP3 Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 200A NTC Thermistor: Yes Supplier Device Package: SP3 IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 290 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 750 W Current - Collector Cutoff (Max): 250 µA Input Capacitance (Cies) @ Vce: 12.3 nF @ 25 V |
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| APTGT20TL601G | Microchip Technology |
Description: IGBT MODULE 600V 32A 62W SP1Packaging: Bulk Package / Case: SP1 Mounting Type: Chassis Mount Input: Standard Configuration: Three Level Inverter Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 20A NTC Thermistor: No Supplier Device Package: SP1 IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 32 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 62 W Current - Collector Cutoff (Max): 250 µA Input Capacitance (Cies) @ Vce: 1.1 pF @ 25 V |
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APT60DF20HJ | Microchip Technology |
Description: BRIDGE RECT 1P 200V 90A SOT227Packaging: Bulk Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: SOT-227 Voltage - Peak Reverse (Max): 200 V Current - Average Rectified (Io): 90 A Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 60 A Current - Reverse Leakage @ Vr: 250 µA @ 200 V |
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APT75DF170HJ | Microchip Technology |
Description: BRIDGE RECT 1P 1.7KV 75A SOT227 |
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APT75DL120HJ | Microchip Technology |
Description: BRIDGE RECT 1P 1.2KV 75A SOT227 |
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APT40GL120JU2 | Microchip Technology |
Description: IGBT MOD 1200V 65A 220W SOT227Packaging: Bulk Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis, Stud Mount Input: Standard Configuration: Single Operating Temperature: -55°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 35A NTC Thermistor: No Supplier Device Package: SOT-227 IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 65 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 220 W Current - Collector Cutoff (Max): 250 µA Input Capacitance (Cies) @ Vce: 1.95 nF @ 25 V |
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APT13F120S | Microchip Technology |
Description: MOSFET N-CH 1200V 14A D3PAK |
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APT14F100S | Microchip Technology |
Description: MOSFET N-CH 1000V 14A D3PAKPackaging: Tube Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 980mOhm @ 7A, 10V Power Dissipation (Max): 500W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: D3Pak Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3965 pF @ 25 V |
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APT17F80S | Microchip Technology |
Description: MOSFET N-CH 800V 18A D3PAKPackaging: Tube Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 580mOhm @ 9A, 10V Power Dissipation (Max): 500W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: D3Pak Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3757 pF @ 25 V |
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APT37F50S | Microchip Technology |
Description: MOSFET N-CH 500V 37A D3PAKPackaging: Tube Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 37A (Tc) Rds On (Max) @ Id, Vgs: 150mOhm @ 18A, 10V Power Dissipation (Max): 520W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: D3Pak Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5710 pF @ 25 V |
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APT33N90JCU2 | Microchip Technology |
Description: MOSFET N-CH 900V 33A SOT227 Packaging: Tray Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Rds On (Max) @ Id, Vgs: 120mOhm @ 26A, 10V Power Dissipation (Max): 290W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 3mA Supplier Device Package: SOT-227 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 100 V |
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APT33N90JCU3 | Microchip Technology |
Description: MOSFET N-CH 900V 33A SOT227 Packaging: Tray Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Rds On (Max) @ Id, Vgs: 120mOhm @ 26A, 10V Power Dissipation (Max): 290W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 3mA Supplier Device Package: SOT-227 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 100 V |
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| APTC60DDAM45T1G | Microchip Technology |
Description: MOSFET 2N-CH 600V 49A SP1Packaging: Tray Package / Case: SP1 Mounting Type: Chassis Mount Configuration: 2 N Channel (Dual Buck Chopper) Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 250W Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 49A Input Capacitance (Ciss) (Max) @ Vds: 7200pF @ 25V Rds On (Max) @ Id, Vgs: 45mOhm @ 24.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V Vgs(th) (Max) @ Id: 3.9V @ 3mA Supplier Device Package: SP1 |
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APTC60DSKM24T3G | Microchip Technology |
Description: MOSFET 2N-CH 600V 95A SP3Packaging: Tray Package / Case: SP3 Mounting Type: Chassis Mount Configuration: 2 N Channel (Dual Buck Chopper) Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 462W Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 95A Input Capacitance (Ciss) (Max) @ Vds: 14400pF @ 25V Rds On (Max) @ Id, Vgs: 24mOhm @ 47.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V Vgs(th) (Max) @ Id: 3.9V @ 5mA Supplier Device Package: SP3 Part Status: Active |
на замовлення 7 шт: термін постачання 21-31 дні (днів) |
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| APTC60HM70BT3G | Microchip Technology |
Description: MOSFET 4N-CH 600V 39A SP3Packaging: Tray Package / Case: SP3 Mounting Type: Chassis Mount Configuration: 4 N-Channel (Full Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 250W Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 39A Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 25V Rds On (Max) @ Id, Vgs: 70mOhm @ 39A, 10V Gate Charge (Qg) (Max) @ Vgs: 259nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3.9V @ 2.7mA Supplier Device Package: SP3 |
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APT30DQ60BHBG | Microchip Technology |
Description: DIODE ARRAY GP 600V 30A TO247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 30A Supplier Device Package: TO-247 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 30 A |
на замовлення 150 шт: термін постачання 21-31 дні (днів) |
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APT25GN120SG | Microchip Technology |
Description: IGBT 1200V 67A 272W D3PAKPackaging: Tube Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A Supplier Device Package: D3Pak IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 22ns/280ns Test Condition: 800V, 25A, 1Ohm, 15V Gate Charge: 155 nC Current - Collector (Ic) (Max): 67 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 75 A Power - Max: 272 W |
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APT200GT60JR | Microchip Technology |
Description: IGBT MOD 600V 195A 500W SOT227Packaging: Tray Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -55°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 200A NTC Thermistor: No Supplier Device Package: SOT-227 IGBT Type: NPT Current - Collector (Ic) (Max): 195 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 500 W Current - Collector Cutoff (Max): 25 µA Input Capacitance (Cies) @ Vce: 8.65 nF @ 25 V |
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APT17F100S | Microchip Technology |
Description: MOSFET N-CH 1000V 17A D3PAKPackaging: Tube Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 780mOhm @ 9A, 10V Power Dissipation (Max): 625W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: D3Pak Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4845 pF @ 25 V |
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APT42F50S | Microchip Technology |
Description: MOSFET N-CH 500V 42A D3PAKPackaging: Tube Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Rds On (Max) @ Id, Vgs: 130mOhm @ 21A, 10V Power Dissipation (Max): 625W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: D3Pak Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6810 pF @ 25 V |
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APT30F50S | Microchip Technology |
Description: MOSFET N-CH 500V 30A D3PAKPackaging: Tube Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 14A, 10V Power Dissipation (Max): 415W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: D3Pak Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4525 pF @ 25 V |
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В кошику од. на суму грн. | ||||||||
| APTC60VDAM45T1G | Microchip Technology |
Description: MOSFET 2N-CH 600V 49A SP1Packaging: Tray Package / Case: SP1 Mounting Type: Chassis Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 250W Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 49A Input Capacitance (Ciss) (Max) @ Vds: 7200pF @ 25V Rds On (Max) @ Id, Vgs: 45mOhm @ 24.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V Vgs(th) (Max) @ Id: 3.9V @ 3mA Supplier Device Package: SP1 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
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24LC128T-I/SN | Microchip Technology |
Description: IC EEPROM 128KBIT I2C 8SOICPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 128Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.5V ~ 5.5V Technology: EEPROM Clock Frequency: 400 kHz Memory Format: EEPROM Supplier Device Package: 8-SOIC Part Status: Active Write Cycle Time - Word, Page: 5ms Memory Interface: I2C Access Time: 900 ns Memory Organization: 16K x 8 DigiKey Programmable: Verified |
на замовлення 5992 шт: термін постачання 21-31 дні (днів) |
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24LC32AT-I/SN | Microchip Technology |
Description: IC EEPROM 32KBIT I2C 8SOICPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 32Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.5V ~ 5.5V Technology: EEPROM Clock Frequency: 400 kHz Memory Format: EEPROM Supplier Device Package: 8-SOIC Part Status: Active Write Cycle Time - Word, Page: 5ms Memory Interface: I2C Access Time: 900 ns Memory Organization: 4K x 8 DigiKey Programmable: Verified |
на замовлення 76239 шт: термін постачання 21-31 дні (днів) |
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LAN8710A-EZC-TR | Microchip Technology |
Description: IC TRANSCEIVER FULL 4/4 32QFNPackaging: Cut Tape (CT) Package / Case: 32-VFQFN Exposed Pad Mounting Type: Surface Mount Type: Transceiver Operating Temperature: 0°C ~ 85°C Voltage - Supply: 1.6V ~ 3.6V Number of Drivers/Receivers: 4/4 Data Rate: 100Mbps Protocol: MII, RMII Supplier Device Package: 32-QFN (5x5) Duplex: Full Part Status: Active |
на замовлення 24997 шт: термін постачання 21-31 дні (днів) |
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LAN8710A-EZK-TR | Microchip Technology |
Description: IC TRANSCEIVER FULL 4/4 32QFNPackaging: Cut Tape (CT) Package / Case: 32-VFQFN Exposed Pad Mounting Type: Surface Mount Type: Transceiver Operating Temperature: 0°C ~ 85°C Voltage - Supply: 1.6V ~ 3.6V Number of Drivers/Receivers: 4/4 Data Rate: 100Mbps Protocol: MII, RMII Supplier Device Package: 32-QFN (5x5) Duplex: Full Part Status: Active |
на замовлення 49543 шт: термін постачання 21-31 дні (днів) |
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LAN8720A-CP-TR | Microchip Technology |
Description: IC TRANSCEIVER FULL 2/2 24QFNPackaging: Cut Tape (CT) Package / Case: 24-VFQFN Exposed Pad Mounting Type: Surface Mount Type: Transceiver Operating Temperature: 0°C ~ 85°C Voltage - Supply: 1.6V ~ 3.6V Number of Drivers/Receivers: 2/2 Data Rate: 100Mbps Protocol: MII, RMII Supplier Device Package: 24-QFN (4x4) Duplex: Full Part Status: Active |
на замовлення 13388 шт: термін постачання 21-31 дні (днів) |
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MCP23S17T-E/SS | Microchip Technology |
Description: IC XPNDR 10MHZ SPI 28SSOPPackaging: Cut Tape (CT) Package / Case: 28-SSOP (0.209", 5.30mm Width) Output Type: Push-Pull Mounting Type: Surface Mount Interface: SPI Number of I/O: 16 Operating Temperature: -40°C ~ 125°C Voltage - Supply: 1.8V ~ 5.5V Clock Frequency: 10 MHz Interrupt Output: Yes Supplier Device Package: 28-SSOP Current - Output Source/Sink: 25mA Part Status: Active DigiKey Programmable: Not Verified |
на замовлення 25189 шт: термін постачання 21-31 дні (днів) |
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MCP2515T-I/SO | Microchip Technology |
Description: IC CAN CONTROLLER W/SPI 18SOICPackaging: Cut Tape (CT) Package / Case: 18-SOIC (0.295", 7.50mm Width) Function: Controller Interface: SPI Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2.7V ~ 5.5V Current - Supply: 10mA Protocol: CANbus Standards: CAN 2.0 Supplier Device Package: 18-SOIC Part Status: Active DigiKey Programmable: Not Verified |
на замовлення 21129 шт: термін постачання 21-31 дні (днів) |
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MCP2515T-I/ST | Microchip Technology |
Description: IC CAN CONTROLLER W/SPI 20TSSOPPackaging: Cut Tape (CT) Package / Case: 20-TSSOP (0.173", 4.40mm Width) Function: Controller Interface: SPI Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2.7V ~ 5.5V Current - Supply: 10mA Protocol: CANbus Standards: CAN 2.0 Supplier Device Package: 20-TSSOP Part Status: Active DigiKey Programmable: Not Verified |
на замовлення 13462 шт: термін постачання 21-31 дні (днів) |
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MCP2551T-E/SN | Microchip Technology |
Description: IC TRANSCEIVER HALF 1/1 8SOICPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Type: Transceiver Operating Temperature: -40°C ~ 125°C Voltage - Supply: 4.5V ~ 5.5V Number of Drivers/Receivers: 1/1 Protocol: CANbus Supplier Device Package: 8-SOIC Receiver Hysteresis: 200 mV Duplex: Half Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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MCP6002T-I/SN | Microchip Technology |
Description: IC OPAMP GP 2 CIRCUIT 8SOICPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: Standard (General Purpose) Operating Temperature: -40°C ~ 85°C (TA) Current - Supply: 100µA (x2 Channels) Slew Rate: 0.6V/µs Gain Bandwidth Product: 1 MHz Current - Input Bias: 1 pA Voltage - Input Offset: 4.5 mV Supplier Device Package: 8-SOIC Part Status: Active Number of Circuits: 2 Current - Output / Channel: 23 mA Voltage - Supply Span (Min): 1.8 V Voltage - Supply Span (Max): 6 V |
на замовлення 25432 шт: термін постачання 21-31 дні (днів) |
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MCP6004T-I/ST | Microchip Technology |
Description: IC OPAMP GP 4 CIRCUIT 14TSSOPPackaging: Cut Tape (CT) Package / Case: 14-TSSOP (0.173", 4.40mm Width) Output Type: Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: Standard (General Purpose) Operating Temperature: -40°C ~ 85°C (TA) Current - Supply: 100µA (x4 Channels) Slew Rate: 0.6V/µs Gain Bandwidth Product: 1 MHz Current - Input Bias: 1 pA Voltage - Input Offset: 4.5 mV Supplier Device Package: 14-TSSOP Part Status: Active Number of Circuits: 4 Current - Output / Channel: 23 mA Voltage - Supply Span (Min): 1.8 V Voltage - Supply Span (Max): 6 V |
на замовлення 49462 шт: термін постачання 21-31 дні (днів) |
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USB3320C-EZK-TR | Microchip Technology |
Description: IC TRANSCEIVER HALF 1/1 32QFNPackaging: Cut Tape (CT) Package / Case: 32-VFQFN Exposed Pad Mounting Type: Surface Mount Type: Transceiver Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.8V ~ 3.3V Number of Drivers/Receivers: 1/1 Protocol: USB 2.0 Supplier Device Package: 32-QFN (5x5) Receiver Hysteresis: 50 mV Duplex: Half Part Status: Active |
на замовлення 14330 шт: термін постачання 21-31 дні (днів) |
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| DS3102GN | Microchip Technology |
Description: IC TIMING LINE CARD 81CSBGAPackaging: Tray Package / Case: 81-LBGA, CSBGA Mounting Type: Surface Mount Output: CMOS, LVDS, LVPECL, TTL Frequency - Max: 312.5MHz Input: CMOS, LVDS, LVPECL, TTL Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.62V ~ 1.98V Main Purpose: Ethernet, SONET/SDH, Stratum, Telecom Ratio - Input:Output: 8:7 Differential - Input:Output: No/Yes Supplier Device Package: 81-CSBGA (10x10) PLL: Yes Part Status: Obsolete Number of Circuits: 1 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| DS31400GN | Microchip Technology |
Description: IC TIMING DUAL DPLL 256CSBGAPackaging: Tray Package / Case: 256-LBGA, CSBGA Mounting Type: Surface Mount Output: CML, CMOS, LVDS, LVPECL, TTL Frequency - Max: 750MHz Input: CMOS, TTL Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.8V Main Purpose: Ethernet, SONET/SDH, Stratum, Telecom Ratio - Input:Output: 8:14 Differential - Input:Output: Yes/Yes Supplier Device Package: 256-CSPBGA (17x17) PLL: Yes Part Status: Obsolete Number of Circuits: 1 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| DS31404GN2 | Microchip Technology |
Description: IC TIMING DUAL DPLL 256CSBGAPackaging: Tray Package / Case: 256-LBGA, CSBGA Mounting Type: Surface Mount Output: CML, CMOS, LVDS, LVPECL, TTL Frequency - Max: 750MHz Input: CMOS, TTL Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.8V Main Purpose: Ethernet, SONET/SDH, Stratum, Telecom Ratio - Input:Output: 4:8 Differential - Input:Output: Yes/Yes Supplier Device Package: 256-CSBGA (17x17) PLL: Yes Part Status: Active Number of Circuits: 2 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| DS31408GN | Microchip Technology |
Description: IC TIMING DUAL DPLL 256CSBGAPackaging: Tray Package / Case: 256-LBGA, CSBGA Mounting Type: Surface Mount Output: CML, CMOS, LVDS, LVPECL, TTL Frequency - Max: 750MHz Input: CMOS, TTL Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.8V Main Purpose: Ethernet, SONET/SDH, Stratum, Telecom Ratio - Input:Output: 8:14 Differential - Input:Output: Yes/Yes Supplier Device Package: 256-CSBGA (17x17) PLL: Yes Part Status: Obsolete Number of Circuits: 1 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| LE57D122BTC | Microchip Technology |
Description: IC TELECOM INTERFACE 44TQFPPackaging: Tray Package / Case: 44-TQFP Exposed Pad Mounting Type: Surface Mount Function: Subscriber Line Interface Concept (SLIC) Interface: 2-Wire Operating Temperature: -40°C ~ 85°C Voltage - Supply: 4.75V ~ 5.25V Supplier Device Package: 44-TQFP-EP (10x10) Number of Circuits: 2 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| LE58083ABGC | Microchip Technology |
Description: IC TELECOM INTERFACE 121BGAPackaging: Tray Package / Case: 121-LFBGA Mounting Type: Surface Mount Function: Subscriber Line Interface Concept (SLIC) Interface: PCI Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3.3V Supplier Device Package: 121-LFBGA (10x10) Number of Circuits: 1 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| DS31415GN2 | Microchip Technology |
Description: IC TIMING SINGLE DPLL 256CSBGAPackaging: Tray Package / Case: 256-LBGA, CSBGA Mounting Type: Surface Mount Output: CML, CMOS, LVDS, LVPECL, TTL Frequency - Max: 750MHz Input: CMOS, TTL Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.8V Main Purpose: Ethernet, SONET/SDH, Stratum, Telecom Ratio - Input:Output: 3:4 Differential - Input:Output: Yes/Yes Supplier Device Package: 256-CSBGA (17x17) PLL: Yes Part Status: Active Number of Circuits: 1 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| LE58QL02FJCT | Microchip Technology |
Description: IC TELECOM INTERFACE 44PLCC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
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LE78D110BVC | Microchip Technology |
Description: IC TELECOM INTERFACE 44TQFPPackaging: Tray Package / Case: 44-TQFP Mounting Type: Surface Mount Function: Voice Over IP Processor Interface: PCM Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3.3V Supplier Device Package: 44-TQFP (10x10) Number of Circuits: 1 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
|
LE79R70-1FQC | Microchip Technology |
Description: IC TELECOM INTERFACE 32QFN |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
|
LE79R79-1FQC | Microchip Technology |
Description: IC TELECOM INTERFACE 32QFN |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
| LE58QL031DJC | Microchip Technology |
Description: IC TELECOM INTERFACE 32PLCC |
товару немає в наявності |
В кошику од. на суму грн. |
| APT40GL120JU3 |
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Виробник: Microchip Technology
Description: IGBT MOD 1200V 65A 220W SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis, Stud Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 35A
NTC Thermistor: No
Supplier Device Package: SOT-227
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 65 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 220 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 1.95 nF @ 25 V
Description: IGBT MOD 1200V 65A 220W SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis, Stud Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 35A
NTC Thermistor: No
Supplier Device Package: SOT-227
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 65 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 220 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 1.95 nF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| APTGF150A60T3AG |
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Виробник: Microchip Technology
Description: IGBT MODULE 600V 230A 833W SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 200A
NTC Thermistor: Yes
Supplier Device Package: SP3
IGBT Type: NPT
Part Status: Obsolete
Current - Collector (Ic) (Max): 230 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 833 W
Current - Collector Cutoff (Max): 350 µA
Input Capacitance (Cies) @ Vce: 9 nF @ 25 V
Description: IGBT MODULE 600V 230A 833W SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 200A
NTC Thermistor: Yes
Supplier Device Package: SP3
IGBT Type: NPT
Part Status: Obsolete
Current - Collector (Ic) (Max): 230 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 833 W
Current - Collector Cutoff (Max): 350 µA
Input Capacitance (Cies) @ Vce: 9 nF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| APTGF50DH120T3G |
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Виробник: Microchip Technology
Description: IGBT MODULE 1200V 70A 312W SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Input: Standard
Configuration: Asymmetrical Bridge
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: SP3
IGBT Type: NPT
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 312 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 3.45 nF @ 25 V
Description: IGBT MODULE 1200V 70A 312W SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Input: Standard
Configuration: Asymmetrical Bridge
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: SP3
IGBT Type: NPT
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 312 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 3.45 nF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| APTGF50DSK120T3G |
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Виробник: Microchip Technology
Description: IGBT MODULE 1200V 70A 312W SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Input: Standard
Configuration: Dual Buck Chopper
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: SP3
IGBT Type: NPT
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 312 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 3.45 nF @ 25 V
Description: IGBT MODULE 1200V 70A 312W SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Input: Standard
Configuration: Dual Buck Chopper
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: SP3
IGBT Type: NPT
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 312 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 3.45 nF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| APTGL120TDU120TPG |
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Виробник: Microchip Technology
Description: IGBT MODULE 1200V 140A 517W SP6P
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Triple, Dual - Common Source
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: SP6-P
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 140 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 517 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 6.2 nF @ 25 V
Description: IGBT MODULE 1200V 140A 517W SP6P
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Triple, Dual - Common Source
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: SP6-P
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 140 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 517 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 6.2 nF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| APTGL40H120T1G |
Виробник: Microchip Technology
Description: IGBT MODULE 1200V 65A 220W SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 35A
NTC Thermistor: Yes
Supplier Device Package: SP1
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 65 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 220 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 1.95 nF @ 25 V
Description: IGBT MODULE 1200V 65A 220W SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 35A
NTC Thermistor: Yes
Supplier Device Package: SP1
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 65 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 220 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 1.95 nF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| APTGL40X120T3G |
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Виробник: Microchip Technology
Description: IGBT MODULE 1200V 65A 220W SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 35A
NTC Thermistor: Yes
Supplier Device Package: SP3
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 65 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 220 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 1.95 nF @ 25 V
Description: IGBT MODULE 1200V 65A 220W SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 35A
NTC Thermistor: Yes
Supplier Device Package: SP3
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 65 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 220 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 1.95 nF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| APTGL90A120T1G |
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Виробник: Microchip Technology
Description: IGBT MODULE 1200V 110A 385W SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Through Hole
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: SP1
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 110 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 385 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 4.4 nF @ 25 V
Description: IGBT MODULE 1200V 110A 385W SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Through Hole
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: SP1
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 110 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 385 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 4.4 nF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| APTGL90DA120T1G |
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Виробник: Microchip Technology
Description: IGBT MODULE 1200V 110A 385W SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: SP1
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 110 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 385 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 4.4 nF @ 25 V
Description: IGBT MODULE 1200V 110A 385W SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: SP1
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 110 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 385 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 4.4 nF @ 25 V
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| APT90DR160HJ |
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Виробник: Microchip Technology
Description: BRIDGE RECT 1PHASE 1.6KV SOT-227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: SOT-227
Voltage - Peak Reverse (Max): 1.6 kV
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 90 A
Current - Reverse Leakage @ Vr: 50 µA @ 1600 V
Description: BRIDGE RECT 1PHASE 1.6KV SOT-227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: SOT-227
Voltage - Peak Reverse (Max): 1.6 kV
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 90 A
Current - Reverse Leakage @ Vr: 50 µA @ 1600 V
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| APTGL90DDA120T3G |
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Виробник: Microchip Technology
Description: IGBT MODULE 1200V 110A 385W SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Input: Standard
Configuration: Dual Boost Chopper
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: SP3
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 110 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 385 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 4.4 nF @ 25 V
Description: IGBT MODULE 1200V 110A 385W SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Input: Standard
Configuration: Dual Boost Chopper
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: SP3
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 110 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 385 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 4.4 nF @ 25 V
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| APTGL90DSK120T3G |
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Виробник: Microchip Technology
Description: IGBT MODULE 1200V 110A 385W SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Input: Standard
Configuration: Dual Buck Chopper
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: SP3
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 110 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 385 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 4.4 nF @ 25 V
Description: IGBT MODULE 1200V 110A 385W SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Input: Standard
Configuration: Dual Buck Chopper
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: SP3
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 110 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 385 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 4.4 nF @ 25 V
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| APTGL90H120T3G |
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Виробник: Microchip Technology
Description: IGBT MODULE 1200V 110A 385W SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: SP3
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 110 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 385 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 4.4 nF @ 25 V
Description: IGBT MODULE 1200V 110A 385W SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: SP3
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 110 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 385 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 4.4 nF @ 25 V
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| APTGT200DA60T3AG |
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Виробник: Microchip Technology
Description: IGBT MODULE 600V 290A 750W SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 200A
NTC Thermistor: Yes
Supplier Device Package: SP3
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 290 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 750 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 12.3 nF @ 25 V
Description: IGBT MODULE 600V 290A 750W SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 200A
NTC Thermistor: Yes
Supplier Device Package: SP3
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 290 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 750 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 12.3 nF @ 25 V
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| APTGT200SK60T3AG |
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Виробник: Microchip Technology
Description: IGBT MODULE 600V 290A 750W SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 200A
NTC Thermistor: Yes
Supplier Device Package: SP3
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 290 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 750 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 12.3 nF @ 25 V
Description: IGBT MODULE 600V 290A 750W SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 200A
NTC Thermistor: Yes
Supplier Device Package: SP3
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 290 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 750 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 12.3 nF @ 25 V
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| APTGT20TL601G |
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Виробник: Microchip Technology
Description: IGBT MODULE 600V 32A 62W SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Level Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 20A
NTC Thermistor: No
Supplier Device Package: SP1
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 32 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 62 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 1.1 pF @ 25 V
Description: IGBT MODULE 600V 32A 62W SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Level Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 20A
NTC Thermistor: No
Supplier Device Package: SP1
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 32 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 62 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 1.1 pF @ 25 V
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| APT60DF20HJ |
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Виробник: Microchip Technology
Description: BRIDGE RECT 1P 200V 90A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: SOT-227
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 90 A
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 60 A
Current - Reverse Leakage @ Vr: 250 µA @ 200 V
Description: BRIDGE RECT 1P 200V 90A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: SOT-227
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 90 A
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 60 A
Current - Reverse Leakage @ Vr: 250 µA @ 200 V
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| APT75DF170HJ |
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Виробник: Microchip Technology
Description: BRIDGE RECT 1P 1.7KV 75A SOT227
Description: BRIDGE RECT 1P 1.7KV 75A SOT227
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| APT75DL120HJ |
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Виробник: Microchip Technology
Description: BRIDGE RECT 1P 1.2KV 75A SOT227
Description: BRIDGE RECT 1P 1.2KV 75A SOT227
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| APT40GL120JU2 |
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Виробник: Microchip Technology
Description: IGBT MOD 1200V 65A 220W SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis, Stud Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 35A
NTC Thermistor: No
Supplier Device Package: SOT-227
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 65 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 220 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 1.95 nF @ 25 V
Description: IGBT MOD 1200V 65A 220W SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis, Stud Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 35A
NTC Thermistor: No
Supplier Device Package: SOT-227
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 65 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 220 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 1.95 nF @ 25 V
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| APT13F120S |
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Виробник: Microchip Technology
Description: MOSFET N-CH 1200V 14A D3PAK
Description: MOSFET N-CH 1200V 14A D3PAK
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| APT14F100S |
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Виробник: Microchip Technology
Description: MOSFET N-CH 1000V 14A D3PAK
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 980mOhm @ 7A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: D3Pak
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3965 pF @ 25 V
Description: MOSFET N-CH 1000V 14A D3PAK
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 980mOhm @ 7A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: D3Pak
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3965 pF @ 25 V
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| APT17F80S |
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Виробник: Microchip Technology
Description: MOSFET N-CH 800V 18A D3PAK
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 580mOhm @ 9A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: D3Pak
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3757 pF @ 25 V
Description: MOSFET N-CH 800V 18A D3PAK
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 580mOhm @ 9A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: D3Pak
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3757 pF @ 25 V
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| APT37F50S |
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Виробник: Microchip Technology
Description: MOSFET N-CH 500V 37A D3PAK
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 18A, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: D3Pak
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5710 pF @ 25 V
Description: MOSFET N-CH 500V 37A D3PAK
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 18A, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: D3Pak
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5710 pF @ 25 V
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| APT33N90JCU2 |
Виробник: Microchip Technology
Description: MOSFET N-CH 900V 33A SOT227
Packaging: Tray
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 26A, 10V
Power Dissipation (Max): 290W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 3mA
Supplier Device Package: SOT-227
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 100 V
Description: MOSFET N-CH 900V 33A SOT227
Packaging: Tray
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 26A, 10V
Power Dissipation (Max): 290W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 3mA
Supplier Device Package: SOT-227
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 100 V
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| APT33N90JCU3 |
Виробник: Microchip Technology
Description: MOSFET N-CH 900V 33A SOT227
Packaging: Tray
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 26A, 10V
Power Dissipation (Max): 290W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 3mA
Supplier Device Package: SOT-227
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 100 V
Description: MOSFET N-CH 900V 33A SOT227
Packaging: Tray
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 26A, 10V
Power Dissipation (Max): 290W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 3mA
Supplier Device Package: SOT-227
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 100 V
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| APTC60DDAM45T1G |
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Виробник: Microchip Technology
Description: MOSFET 2N-CH 600V 49A SP1
Packaging: Tray
Package / Case: SP1
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Dual Buck Chopper)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 250W
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 49A
Input Capacitance (Ciss) (Max) @ Vds: 7200pF @ 25V
Rds On (Max) @ Id, Vgs: 45mOhm @ 24.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
Vgs(th) (Max) @ Id: 3.9V @ 3mA
Supplier Device Package: SP1
Description: MOSFET 2N-CH 600V 49A SP1
Packaging: Tray
Package / Case: SP1
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Dual Buck Chopper)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 250W
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 49A
Input Capacitance (Ciss) (Max) @ Vds: 7200pF @ 25V
Rds On (Max) @ Id, Vgs: 45mOhm @ 24.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
Vgs(th) (Max) @ Id: 3.9V @ 3mA
Supplier Device Package: SP1
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| APTC60DSKM24T3G |
![]() |
Виробник: Microchip Technology
Description: MOSFET 2N-CH 600V 95A SP3
Packaging: Tray
Package / Case: SP3
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Dual Buck Chopper)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 462W
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 95A
Input Capacitance (Ciss) (Max) @ Vds: 14400pF @ 25V
Rds On (Max) @ Id, Vgs: 24mOhm @ 47.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
Vgs(th) (Max) @ Id: 3.9V @ 5mA
Supplier Device Package: SP3
Part Status: Active
Description: MOSFET 2N-CH 600V 95A SP3
Packaging: Tray
Package / Case: SP3
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Dual Buck Chopper)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 462W
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 95A
Input Capacitance (Ciss) (Max) @ Vds: 14400pF @ 25V
Rds On (Max) @ Id, Vgs: 24mOhm @ 47.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
Vgs(th) (Max) @ Id: 3.9V @ 5mA
Supplier Device Package: SP3
Part Status: Active
на замовлення 7 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 6910.74 грн |
| APTC60HM70BT3G |
![]() |
Виробник: Microchip Technology
Description: MOSFET 4N-CH 600V 39A SP3
Packaging: Tray
Package / Case: SP3
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 250W
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 39A
Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 25V
Rds On (Max) @ Id, Vgs: 70mOhm @ 39A, 10V
Gate Charge (Qg) (Max) @ Vgs: 259nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3.9V @ 2.7mA
Supplier Device Package: SP3
Description: MOSFET 4N-CH 600V 39A SP3
Packaging: Tray
Package / Case: SP3
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 250W
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 39A
Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 25V
Rds On (Max) @ Id, Vgs: 70mOhm @ 39A, 10V
Gate Charge (Qg) (Max) @ Vgs: 259nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3.9V @ 2.7mA
Supplier Device Package: SP3
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| APT30DQ60BHBG |
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Виробник: Microchip Technology
Description: DIODE ARRAY GP 600V 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 30 A
Description: DIODE ARRAY GP 600V 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 30 A
на замовлення 150 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 404.63 грн |
| 100+ | 316.87 грн |
| APT25GN120SG |
![]() |
Виробник: Microchip Technology
Description: IGBT 1200V 67A 272W D3PAK
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
Supplier Device Package: D3Pak
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 22ns/280ns
Test Condition: 800V, 25A, 1Ohm, 15V
Gate Charge: 155 nC
Current - Collector (Ic) (Max): 67 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 272 W
Description: IGBT 1200V 67A 272W D3PAK
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
Supplier Device Package: D3Pak
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 22ns/280ns
Test Condition: 800V, 25A, 1Ohm, 15V
Gate Charge: 155 nC
Current - Collector (Ic) (Max): 67 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 272 W
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| APT200GT60JR |
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Виробник: Microchip Technology
Description: IGBT MOD 600V 195A 500W SOT227
Packaging: Tray
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 200A
NTC Thermistor: No
Supplier Device Package: SOT-227
IGBT Type: NPT
Current - Collector (Ic) (Max): 195 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 500 W
Current - Collector Cutoff (Max): 25 µA
Input Capacitance (Cies) @ Vce: 8.65 nF @ 25 V
Description: IGBT MOD 600V 195A 500W SOT227
Packaging: Tray
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 200A
NTC Thermistor: No
Supplier Device Package: SOT-227
IGBT Type: NPT
Current - Collector (Ic) (Max): 195 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 500 W
Current - Collector Cutoff (Max): 25 µA
Input Capacitance (Cies) @ Vce: 8.65 nF @ 25 V
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| APT17F100S |
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Виробник: Microchip Technology
Description: MOSFET N-CH 1000V 17A D3PAK
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 780mOhm @ 9A, 10V
Power Dissipation (Max): 625W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: D3Pak
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4845 pF @ 25 V
Description: MOSFET N-CH 1000V 17A D3PAK
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 780mOhm @ 9A, 10V
Power Dissipation (Max): 625W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: D3Pak
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4845 pF @ 25 V
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| APT42F50S |
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Виробник: Microchip Technology
Description: MOSFET N-CH 500V 42A D3PAK
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 21A, 10V
Power Dissipation (Max): 625W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: D3Pak
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6810 pF @ 25 V
Description: MOSFET N-CH 500V 42A D3PAK
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 21A, 10V
Power Dissipation (Max): 625W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: D3Pak
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6810 pF @ 25 V
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| APT30F50S |
![]() |
Виробник: Microchip Technology
Description: MOSFET N-CH 500V 30A D3PAK
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 14A, 10V
Power Dissipation (Max): 415W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: D3Pak
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4525 pF @ 25 V
Description: MOSFET N-CH 500V 30A D3PAK
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 14A, 10V
Power Dissipation (Max): 415W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: D3Pak
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4525 pF @ 25 V
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| APTC60VDAM45T1G |
![]() |
Виробник: Microchip Technology
Description: MOSFET 2N-CH 600V 49A SP1
Packaging: Tray
Package / Case: SP1
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 250W
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 49A
Input Capacitance (Ciss) (Max) @ Vds: 7200pF @ 25V
Rds On (Max) @ Id, Vgs: 45mOhm @ 24.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
Vgs(th) (Max) @ Id: 3.9V @ 3mA
Supplier Device Package: SP1
Description: MOSFET 2N-CH 600V 49A SP1
Packaging: Tray
Package / Case: SP1
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 250W
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 49A
Input Capacitance (Ciss) (Max) @ Vds: 7200pF @ 25V
Rds On (Max) @ Id, Vgs: 45mOhm @ 24.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
Vgs(th) (Max) @ Id: 3.9V @ 3mA
Supplier Device Package: SP1
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| 24LC128T-I/SN |
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Виробник: Microchip Technology
Description: IC EEPROM 128KBIT I2C 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 128Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 16K x 8
DigiKey Programmable: Verified
Description: IC EEPROM 128KBIT I2C 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 128Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 16K x 8
DigiKey Programmable: Verified
на замовлення 5992 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 56.75 грн |
| 24LC32AT-I/SN |
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Виробник: Microchip Technology
Description: IC EEPROM 32KBIT I2C 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 32Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 4K x 8
DigiKey Programmable: Verified
Description: IC EEPROM 32KBIT I2C 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 32Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 4K x 8
DigiKey Programmable: Verified
на замовлення 76239 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 35.36 грн |
| LAN8710A-EZC-TR |
![]() |
Виробник: Microchip Technology
Description: IC TRANSCEIVER FULL 4/4 32QFN
Packaging: Cut Tape (CT)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: 0°C ~ 85°C
Voltage - Supply: 1.6V ~ 3.6V
Number of Drivers/Receivers: 4/4
Data Rate: 100Mbps
Protocol: MII, RMII
Supplier Device Package: 32-QFN (5x5)
Duplex: Full
Part Status: Active
Description: IC TRANSCEIVER FULL 4/4 32QFN
Packaging: Cut Tape (CT)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: 0°C ~ 85°C
Voltage - Supply: 1.6V ~ 3.6V
Number of Drivers/Receivers: 4/4
Data Rate: 100Mbps
Protocol: MII, RMII
Supplier Device Package: 32-QFN (5x5)
Duplex: Full
Part Status: Active
на замовлення 24997 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 78.13 грн |
| 25+ | 62.94 грн |
| 100+ | 60.70 грн |
| LAN8710A-EZK-TR |
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Виробник: Microchip Technology
Description: IC TRANSCEIVER FULL 4/4 32QFN
Packaging: Cut Tape (CT)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: 0°C ~ 85°C
Voltage - Supply: 1.6V ~ 3.6V
Number of Drivers/Receivers: 4/4
Data Rate: 100Mbps
Protocol: MII, RMII
Supplier Device Package: 32-QFN (5x5)
Duplex: Full
Part Status: Active
Description: IC TRANSCEIVER FULL 4/4 32QFN
Packaging: Cut Tape (CT)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: 0°C ~ 85°C
Voltage - Supply: 1.6V ~ 3.6V
Number of Drivers/Receivers: 4/4
Data Rate: 100Mbps
Protocol: MII, RMII
Supplier Device Package: 32-QFN (5x5)
Duplex: Full
Part Status: Active
на замовлення 49543 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 168.59 грн |
| 10+ | 120.38 грн |
| 25+ | 109.92 грн |
| 100+ | 92.38 грн |
| LAN8720A-CP-TR |
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Виробник: Microchip Technology
Description: IC TRANSCEIVER FULL 2/2 24QFN
Packaging: Cut Tape (CT)
Package / Case: 24-VFQFN Exposed Pad
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: 0°C ~ 85°C
Voltage - Supply: 1.6V ~ 3.6V
Number of Drivers/Receivers: 2/2
Data Rate: 100Mbps
Protocol: MII, RMII
Supplier Device Package: 24-QFN (4x4)
Duplex: Full
Part Status: Active
Description: IC TRANSCEIVER FULL 2/2 24QFN
Packaging: Cut Tape (CT)
Package / Case: 24-VFQFN Exposed Pad
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: 0°C ~ 85°C
Voltage - Supply: 1.6V ~ 3.6V
Number of Drivers/Receivers: 2/2
Data Rate: 100Mbps
Protocol: MII, RMII
Supplier Device Package: 24-QFN (4x4)
Duplex: Full
Part Status: Active
на замовлення 13388 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 73.19 грн |
| 25+ | 58.83 грн |
| 100+ | 56.43 грн |
| MCP23S17T-E/SS |
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Виробник: Microchip Technology
Description: IC XPNDR 10MHZ SPI 28SSOP
Packaging: Cut Tape (CT)
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Interface: SPI
Number of I/O: 16
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.8V ~ 5.5V
Clock Frequency: 10 MHz
Interrupt Output: Yes
Supplier Device Package: 28-SSOP
Current - Output Source/Sink: 25mA
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC XPNDR 10MHZ SPI 28SSOP
Packaging: Cut Tape (CT)
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Interface: SPI
Number of I/O: 16
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.8V ~ 5.5V
Clock Frequency: 10 MHz
Interrupt Output: Yes
Supplier Device Package: 28-SSOP
Current - Output Source/Sink: 25mA
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 25189 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 125.83 грн |
| 25+ | 101.21 грн |
| 100+ | 91.71 грн |
| MCP2515T-I/SO |
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Виробник: Microchip Technology
Description: IC CAN CONTROLLER W/SPI 18SOIC
Packaging: Cut Tape (CT)
Package / Case: 18-SOIC (0.295", 7.50mm Width)
Function: Controller
Interface: SPI
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.7V ~ 5.5V
Current - Supply: 10mA
Protocol: CANbus
Standards: CAN 2.0
Supplier Device Package: 18-SOIC
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC CAN CONTROLLER W/SPI 18SOIC
Packaging: Cut Tape (CT)
Package / Case: 18-SOIC (0.295", 7.50mm Width)
Function: Controller
Interface: SPI
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.7V ~ 5.5V
Current - Supply: 10mA
Protocol: CANbus
Standards: CAN 2.0
Supplier Device Package: 18-SOIC
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 21129 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 173.53 грн |
| 25+ | 138.85 грн |
| 100+ | 126.54 грн |
| MCP2515T-I/ST |
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Виробник: Microchip Technology
Description: IC CAN CONTROLLER W/SPI 20TSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Function: Controller
Interface: SPI
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.7V ~ 5.5V
Current - Supply: 10mA
Protocol: CANbus
Standards: CAN 2.0
Supplier Device Package: 20-TSSOP
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC CAN CONTROLLER W/SPI 20TSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Function: Controller
Interface: SPI
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.7V ~ 5.5V
Current - Supply: 10mA
Protocol: CANbus
Standards: CAN 2.0
Supplier Device Package: 20-TSSOP
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 13462 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 189.98 грн |
| 25+ | 152.53 грн |
| 100+ | 138.85 грн |
| MCP2551T-E/SN |
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Виробник: Microchip Technology
Description: IC TRANSCEIVER HALF 1/1 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Number of Drivers/Receivers: 1/1
Protocol: CANbus
Supplier Device Package: 8-SOIC
Receiver Hysteresis: 200 mV
Duplex: Half
Part Status: Active
Description: IC TRANSCEIVER HALF 1/1 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Number of Drivers/Receivers: 1/1
Protocol: CANbus
Supplier Device Package: 8-SOIC
Receiver Hysteresis: 200 mV
Duplex: Half
Part Status: Active
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| MCP6002T-I/SN |
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Виробник: Microchip Technology
Description: IC OPAMP GP 2 CIRCUIT 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 85°C (TA)
Current - Supply: 100µA (x2 Channels)
Slew Rate: 0.6V/µs
Gain Bandwidth Product: 1 MHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 4.5 mV
Supplier Device Package: 8-SOIC
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 23 mA
Voltage - Supply Span (Min): 1.8 V
Voltage - Supply Span (Max): 6 V
Description: IC OPAMP GP 2 CIRCUIT 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 85°C (TA)
Current - Supply: 100µA (x2 Channels)
Slew Rate: 0.6V/µs
Gain Bandwidth Product: 1 MHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 4.5 mV
Supplier Device Package: 8-SOIC
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 23 mA
Voltage - Supply Span (Min): 1.8 V
Voltage - Supply Span (Max): 6 V
на замовлення 25432 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 28.78 грн |
| 25+ | 23.25 грн |
| 100+ | 21.20 грн |
| MCP6004T-I/ST |
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Виробник: Microchip Technology
Description: IC OPAMP GP 4 CIRCUIT 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 85°C (TA)
Current - Supply: 100µA (x4 Channels)
Slew Rate: 0.6V/µs
Gain Bandwidth Product: 1 MHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 4.5 mV
Supplier Device Package: 14-TSSOP
Part Status: Active
Number of Circuits: 4
Current - Output / Channel: 23 mA
Voltage - Supply Span (Min): 1.8 V
Voltage - Supply Span (Max): 6 V
Description: IC OPAMP GP 4 CIRCUIT 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 85°C (TA)
Current - Supply: 100µA (x4 Channels)
Slew Rate: 0.6V/µs
Gain Bandwidth Product: 1 MHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 4.5 mV
Supplier Device Package: 14-TSSOP
Part Status: Active
Number of Circuits: 4
Current - Output / Channel: 23 mA
Voltage - Supply Span (Min): 1.8 V
Voltage - Supply Span (Max): 6 V
на замовлення 49462 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 38.65 грн |
| 25+ | 30.09 грн |
| 100+ | 28.04 грн |
| USB3320C-EZK-TR |
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Виробник: Microchip Technology
Description: IC TRANSCEIVER HALF 1/1 32QFN
Packaging: Cut Tape (CT)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 3.3V
Number of Drivers/Receivers: 1/1
Protocol: USB 2.0
Supplier Device Package: 32-QFN (5x5)
Receiver Hysteresis: 50 mV
Duplex: Half
Part Status: Active
Description: IC TRANSCEIVER HALF 1/1 32QFN
Packaging: Cut Tape (CT)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 3.3V
Number of Drivers/Receivers: 1/1
Protocol: USB 2.0
Supplier Device Package: 32-QFN (5x5)
Receiver Hysteresis: 50 mV
Duplex: Half
Part Status: Active
на замовлення 14330 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 152.97 грн |
| 25+ | 122.21 грн |
| 100+ | 112.02 грн |
| DS3102GN |
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Виробник: Microchip Technology
Description: IC TIMING LINE CARD 81CSBGA
Packaging: Tray
Package / Case: 81-LBGA, CSBGA
Mounting Type: Surface Mount
Output: CMOS, LVDS, LVPECL, TTL
Frequency - Max: 312.5MHz
Input: CMOS, LVDS, LVPECL, TTL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.62V ~ 1.98V
Main Purpose: Ethernet, SONET/SDH, Stratum, Telecom
Ratio - Input:Output: 8:7
Differential - Input:Output: No/Yes
Supplier Device Package: 81-CSBGA (10x10)
PLL: Yes
Part Status: Obsolete
Number of Circuits: 1
DigiKey Programmable: Not Verified
Description: IC TIMING LINE CARD 81CSBGA
Packaging: Tray
Package / Case: 81-LBGA, CSBGA
Mounting Type: Surface Mount
Output: CMOS, LVDS, LVPECL, TTL
Frequency - Max: 312.5MHz
Input: CMOS, LVDS, LVPECL, TTL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.62V ~ 1.98V
Main Purpose: Ethernet, SONET/SDH, Stratum, Telecom
Ratio - Input:Output: 8:7
Differential - Input:Output: No/Yes
Supplier Device Package: 81-CSBGA (10x10)
PLL: Yes
Part Status: Obsolete
Number of Circuits: 1
DigiKey Programmable: Not Verified
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| DS31400GN |
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Виробник: Microchip Technology
Description: IC TIMING DUAL DPLL 256CSBGA
Packaging: Tray
Package / Case: 256-LBGA, CSBGA
Mounting Type: Surface Mount
Output: CML, CMOS, LVDS, LVPECL, TTL
Frequency - Max: 750MHz
Input: CMOS, TTL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V
Main Purpose: Ethernet, SONET/SDH, Stratum, Telecom
Ratio - Input:Output: 8:14
Differential - Input:Output: Yes/Yes
Supplier Device Package: 256-CSPBGA (17x17)
PLL: Yes
Part Status: Obsolete
Number of Circuits: 1
DigiKey Programmable: Not Verified
Description: IC TIMING DUAL DPLL 256CSBGA
Packaging: Tray
Package / Case: 256-LBGA, CSBGA
Mounting Type: Surface Mount
Output: CML, CMOS, LVDS, LVPECL, TTL
Frequency - Max: 750MHz
Input: CMOS, TTL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V
Main Purpose: Ethernet, SONET/SDH, Stratum, Telecom
Ratio - Input:Output: 8:14
Differential - Input:Output: Yes/Yes
Supplier Device Package: 256-CSPBGA (17x17)
PLL: Yes
Part Status: Obsolete
Number of Circuits: 1
DigiKey Programmable: Not Verified
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| DS31404GN2 |
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Виробник: Microchip Technology
Description: IC TIMING DUAL DPLL 256CSBGA
Packaging: Tray
Package / Case: 256-LBGA, CSBGA
Mounting Type: Surface Mount
Output: CML, CMOS, LVDS, LVPECL, TTL
Frequency - Max: 750MHz
Input: CMOS, TTL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V
Main Purpose: Ethernet, SONET/SDH, Stratum, Telecom
Ratio - Input:Output: 4:8
Differential - Input:Output: Yes/Yes
Supplier Device Package: 256-CSBGA (17x17)
PLL: Yes
Part Status: Active
Number of Circuits: 2
DigiKey Programmable: Not Verified
Description: IC TIMING DUAL DPLL 256CSBGA
Packaging: Tray
Package / Case: 256-LBGA, CSBGA
Mounting Type: Surface Mount
Output: CML, CMOS, LVDS, LVPECL, TTL
Frequency - Max: 750MHz
Input: CMOS, TTL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V
Main Purpose: Ethernet, SONET/SDH, Stratum, Telecom
Ratio - Input:Output: 4:8
Differential - Input:Output: Yes/Yes
Supplier Device Package: 256-CSBGA (17x17)
PLL: Yes
Part Status: Active
Number of Circuits: 2
DigiKey Programmable: Not Verified
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| DS31408GN |
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Виробник: Microchip Technology
Description: IC TIMING DUAL DPLL 256CSBGA
Packaging: Tray
Package / Case: 256-LBGA, CSBGA
Mounting Type: Surface Mount
Output: CML, CMOS, LVDS, LVPECL, TTL
Frequency - Max: 750MHz
Input: CMOS, TTL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V
Main Purpose: Ethernet, SONET/SDH, Stratum, Telecom
Ratio - Input:Output: 8:14
Differential - Input:Output: Yes/Yes
Supplier Device Package: 256-CSBGA (17x17)
PLL: Yes
Part Status: Obsolete
Number of Circuits: 1
DigiKey Programmable: Not Verified
Description: IC TIMING DUAL DPLL 256CSBGA
Packaging: Tray
Package / Case: 256-LBGA, CSBGA
Mounting Type: Surface Mount
Output: CML, CMOS, LVDS, LVPECL, TTL
Frequency - Max: 750MHz
Input: CMOS, TTL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V
Main Purpose: Ethernet, SONET/SDH, Stratum, Telecom
Ratio - Input:Output: 8:14
Differential - Input:Output: Yes/Yes
Supplier Device Package: 256-CSBGA (17x17)
PLL: Yes
Part Status: Obsolete
Number of Circuits: 1
DigiKey Programmable: Not Verified
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| LE57D122BTC |
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Виробник: Microchip Technology
Description: IC TELECOM INTERFACE 44TQFP
Packaging: Tray
Package / Case: 44-TQFP Exposed Pad
Mounting Type: Surface Mount
Function: Subscriber Line Interface Concept (SLIC)
Interface: 2-Wire
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.75V ~ 5.25V
Supplier Device Package: 44-TQFP-EP (10x10)
Number of Circuits: 2
Description: IC TELECOM INTERFACE 44TQFP
Packaging: Tray
Package / Case: 44-TQFP Exposed Pad
Mounting Type: Surface Mount
Function: Subscriber Line Interface Concept (SLIC)
Interface: 2-Wire
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.75V ~ 5.25V
Supplier Device Package: 44-TQFP-EP (10x10)
Number of Circuits: 2
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| LE58083ABGC |
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Виробник: Microchip Technology
Description: IC TELECOM INTERFACE 121BGA
Packaging: Tray
Package / Case: 121-LFBGA
Mounting Type: Surface Mount
Function: Subscriber Line Interface Concept (SLIC)
Interface: PCI
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V
Supplier Device Package: 121-LFBGA (10x10)
Number of Circuits: 1
Description: IC TELECOM INTERFACE 121BGA
Packaging: Tray
Package / Case: 121-LFBGA
Mounting Type: Surface Mount
Function: Subscriber Line Interface Concept (SLIC)
Interface: PCI
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V
Supplier Device Package: 121-LFBGA (10x10)
Number of Circuits: 1
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| DS31415GN2 |
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Виробник: Microchip Technology
Description: IC TIMING SINGLE DPLL 256CSBGA
Packaging: Tray
Package / Case: 256-LBGA, CSBGA
Mounting Type: Surface Mount
Output: CML, CMOS, LVDS, LVPECL, TTL
Frequency - Max: 750MHz
Input: CMOS, TTL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V
Main Purpose: Ethernet, SONET/SDH, Stratum, Telecom
Ratio - Input:Output: 3:4
Differential - Input:Output: Yes/Yes
Supplier Device Package: 256-CSBGA (17x17)
PLL: Yes
Part Status: Active
Number of Circuits: 1
DigiKey Programmable: Not Verified
Description: IC TIMING SINGLE DPLL 256CSBGA
Packaging: Tray
Package / Case: 256-LBGA, CSBGA
Mounting Type: Surface Mount
Output: CML, CMOS, LVDS, LVPECL, TTL
Frequency - Max: 750MHz
Input: CMOS, TTL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V
Main Purpose: Ethernet, SONET/SDH, Stratum, Telecom
Ratio - Input:Output: 3:4
Differential - Input:Output: Yes/Yes
Supplier Device Package: 256-CSBGA (17x17)
PLL: Yes
Part Status: Active
Number of Circuits: 1
DigiKey Programmable: Not Verified
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| LE58QL02FJCT |
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Виробник: Microchip Technology
Description: IC TELECOM INTERFACE 44PLCC
Description: IC TELECOM INTERFACE 44PLCC
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| LE78D110BVC |
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Виробник: Microchip Technology
Description: IC TELECOM INTERFACE 44TQFP
Packaging: Tray
Package / Case: 44-TQFP
Mounting Type: Surface Mount
Function: Voice Over IP Processor
Interface: PCM
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V
Supplier Device Package: 44-TQFP (10x10)
Number of Circuits: 1
Description: IC TELECOM INTERFACE 44TQFP
Packaging: Tray
Package / Case: 44-TQFP
Mounting Type: Surface Mount
Function: Voice Over IP Processor
Interface: PCM
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V
Supplier Device Package: 44-TQFP (10x10)
Number of Circuits: 1
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| LE79R70-1FQC |
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Виробник: Microchip Technology
Description: IC TELECOM INTERFACE 32QFN
Description: IC TELECOM INTERFACE 32QFN
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| LE79R79-1FQC |
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Виробник: Microchip Technology
Description: IC TELECOM INTERFACE 32QFN
Description: IC TELECOM INTERFACE 32QFN
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| LE58QL031DJC |
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Виробник: Microchip Technology
Description: IC TELECOM INTERFACE 32PLCC
Description: IC TELECOM INTERFACE 32PLCC
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