| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||
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1N5338B | onsemi |
 Description: DIODE ZENER 5.1V 5W AXIALPackaging: Bulk Tolerance: ±5% Package / Case: T-18, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C Voltage - Zener (Nom) (Vz): 5.1 V Impedance (Max) (Zzt): 1.5 Ohms Supplier Device Package: Axial Power - Max: 5 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 1 V |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||
| SIS5142D2R2G | onsemi |
Description: PRINTER POWER CONTROL Packaging: Bulk |
на замовлення 60000 шт: термін постачання 21-31 дні (днів) |
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NCP303750MNTWG | onsemi |
Description: 50A DCR DRMOS WITH OCP - 5X5 Features: Bootstrap Circuit Packaging: Tape & Reel (TR) Supplier Device Package: 31-PQFN (5x5) Voltage - Load: 2.8V ~ 16V Technology: NMOS Current - Peak Output: 110A Current - Output / Channel: 50A Applications: Synchronous Buck Converters Voltage - Supply: 2.8V ~ 5.5V, 4.5V ~ 16V Output Configuration: Half Bridge Operating Temperature: -40°C ~ 150°C (TJ) Interface: On/Off, PWM Mounting Type: Surface Mount Package / Case: 31-PowerWFQFN Load Type: Inductive, Capacitive Fault Protection: Current Limiting, Over Temperature, UVLO |
на замовлення 3171000 шт: термін постачання 21-31 дні (днів) |
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NCP303750MNTWG | onsemi |
Description: 50A DCR DRMOS WITH OCP - 5X5 Voltage - Supply: 2.8V ~ 5.5V, 4.5V ~ 16V Output Configuration: Half Bridge Operating Temperature: -40°C ~ 150°C (TJ) Interface: On/Off, PWM Mounting Type: Surface Mount Package / Case: 31-PowerWFQFN Features: Bootstrap Circuit Packaging: Cut Tape (CT) Load Type: Inductive, Capacitive Fault Protection: Current Limiting, Over Temperature, UVLO Supplier Device Package: 31-PQFN (5x5) Voltage - Load: 2.8V ~ 16V Technology: NMOS Current - Peak Output: 110A Current - Output / Channel: 50A Applications: Synchronous Buck Converters |
на замовлення 3173238 шт: термін постачання 21-31 дні (днів) |
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FDMF6707C | onsemi |
Description: IC HALF BRIDGE DRIVER 50A 40PQFN Package / Case: 40-PowerTFQFN Features: Bootstrap Circuit, Status Flag Packaging: Bulk Load Type: Inductive Fault Protection: Over Temperature, Shoot-Through, UVLO Supplier Device Package: 40-PQFN (6x6) Voltage - Load: 3V ~ 15V Technology: DrMOS Current - Output / Channel: 50A Applications: Synchronous Buck Converters Rds On (Typ): 1Ohm LS, 1Ohm HS Voltage - Supply: 4.5V ~ 5.5V Output Configuration: Half Bridge Operating Temperature: -40°C ~ 150°C (TJ) Interface: PWM Mounting Type: Surface Mount |
на замовлення 108000 шт: термін постачання 21-31 дні (днів) |
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FDMF6705 | onsemi |
Description: IC HALF BRIDGE DRIVER 38A 40PQFN Load Type: Inductive Fault Protection: Over Temperature, Shoot-Through, UVLO Supplier Device Package: 40-PQFN (6x6) Voltage - Load: 3V ~ 24V Technology: DrMOS Current - Output / Channel: 38A Applications: Synchronous Buck Converters Rds On (Typ): 1Ohm LS, 1Ohm HS Voltage - Supply: 4.5V ~ 5.5V Output Configuration: Half Bridge Operating Temperature: -40°C ~ 150°C (TJ) Interface: PWM Mounting Type: Surface Mount Package / Case: 40-PowerTFQFN Features: Bootstrap Circuit, Status Flag Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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FDMF6705 | onsemi |
Description: IC HALF BRIDGE DRIVER 38A 40PQFN Technology: DrMOS Current - Output / Channel: 38A Applications: Synchronous Buck Converters Rds On (Typ): 1Ohm LS, 1Ohm HS Voltage - Supply: 4.5V ~ 5.5V Output Configuration: Half Bridge Operating Temperature: -40°C ~ 150°C (TJ) Interface: PWM Mounting Type: Surface Mount Package / Case: 40-PowerTFQFN Features: Bootstrap Circuit, Status Flag Packaging: Cut Tape (CT) Load Type: Inductive Fault Protection: Over Temperature, Shoot-Through, UVLO Supplier Device Package: 40-PQFN (6x6) Voltage - Load: 3V ~ 24V |
на замовлення 2929 шт: термін постачання 21-31 дні (днів) |
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FDMF6823B | onsemi |
Description: IC HALF BRIDGE DRIVER 55A 40PQFN Packaging: Tape & Reel (TR) Features: Bootstrap Circuit, Diode Emulation Package / Case: 40-PowerTFQFN Mounting Type: Surface Mount Interface: Logic, PWM Operating Temperature: -40°C ~ 125°C (TA) Output Configuration: Half Bridge Voltage - Supply: 4.5V ~ 5.5V Rds On (Typ): 1Ohm LS, 1Ohm HS Applications: Synchronous Buck Converters Current - Output / Channel: 55A Current - Peak Output: 55A Technology: DrMOS, Power MOSFET Voltage - Load: 3V ~ 16V Supplier Device Package: 40-PQFN (6x6) Fault Protection: Over Temperature, Shoot-Through, UVLO Load Type: Inductive, Capacitive, Resistive |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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FDMF6823B | onsemi |
Description: IC HALF BRIDGE DRIVER 55A 40PQFN Packaging: Cut Tape (CT) Features: Bootstrap Circuit, Diode Emulation Package / Case: 40-PowerTFQFN Mounting Type: Surface Mount Interface: Logic, PWM Operating Temperature: -40°C ~ 125°C (TA) Output Configuration: Half Bridge Voltage - Supply: 4.5V ~ 5.5V Rds On (Typ): 1Ohm LS, 1Ohm HS Applications: Synchronous Buck Converters Current - Output / Channel: 55A Current - Peak Output: 55A Technology: DrMOS, Power MOSFET Voltage - Load: 3V ~ 16V Supplier Device Package: 40-PQFN (6x6) Fault Protection: Over Temperature, Shoot-Through, UVLO Load Type: Inductive, Capacitive, Resistive |
на замовлення 2998 шт: термін постачання 21-31 дні (днів) |
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SS9012HBU | onsemi |
Description: TRANS PNP 20V 0.5A TO-92-3 Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 144 @ 50mA, 1V Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 20 V Power - Max: 625 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BD136 | onsemi |
Description: TRANS PNP 45V 1.5A TO-126 Packaging: Bulk Package / Case: TO-225AA, TO-126-3 Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V Supplier Device Package: TO-126 Current - Collector (Ic) (Max): 1.5 A Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 1.25 W |
товару немає в наявності |
Мінімальне замовлення: 500 шт В кошику од. на суму грн. | ||||||||||||||
| HLMP1301 | onsemi |
Description: LED RED DIFFUSED T-1 T/H Lens Transparency: Diffused Supplier Device Package: T-1 Wavelength - Peak: 635nm Height (Max): 6.30mm Viewing Angle: 90° Current - Test: 10mA Lens Color: Red Voltage - Forward (Vf) (Typ): 2V Configuration: Standard Millicandela Rating: 2.5mcd Mounting Type: Through Hole Color: Red Package / Case: Radial Packaging: Bulk Lens Size: 3mm, T-1 Lens Style: Round with Domed Top |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | |||||||||||||||
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MBR6045PT | onsemi |
Description: DIODE ARRAY SCHOT 45V 30A SOT-93 Packaging: Tube Package / Case: TO-218-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 30A Supplier Device Package: SOT-93 Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 620 mV @ 30 A Current - Reverse Leakage @ Vr: 1 mA @ 45 V |
товару немає в наявності |
Мінімальне замовлення: 30 шт В кошику од. на суму грн. | ||||||||||||||
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SBRS8120NT3G | onsemi |
Description: DIODE SCHOTTKY 20V 1A SMB Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 1 mA @ 20 V Voltage - Forward (Vf) (Max) @ If: 600 mV @ 1 A Voltage - DC Reverse (Vr) (Max): 20 V Grade: Automotive Operating Temperature - Junction: -65°C ~ 125°C Supplier Device Package: SMB Current - Average Rectified (Io): 1A |
на замовлення 22500 шт: термін постачання 21-31 дні (днів) |
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SBRS8120NT3G | onsemi |
Description: DIODE SCHOTTKY 20V 1A SMB Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 1 mA @ 20 V Voltage - Forward (Vf) (Max) @ If: 600 mV @ 1 A Voltage - DC Reverse (Vr) (Max): 20 V Grade: Automotive Operating Temperature - Junction: -65°C ~ 125°C Supplier Device Package: SMB Current - Average Rectified (Io): 1A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Packaging: Cut Tape (CT) |
на замовлення 24755 шт: термін постачання 21-31 дні (днів) |
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IRF540 | onsemi |
Description: MOSFET N-CH 100V 28A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Rds On (Max) @ Id, Vgs: 77mOhm @ 17A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NST3904F3T5G | onsemi |
Description: TRANS NPN 40V 0.2A SOT-1123 Frequency - Transition: 200MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: SOT-1123 Packaging: Bulk Power - Max: 290 mW Voltage - Collector Emitter Breakdown (Max): 40 V Current - Collector (Ic) (Max): 200 mA Supplier Device Package: SOT-1123 |
на замовлення 1099769 шт: термін постачання 21-31 дні (днів) |
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HGTG30N60C3D | onsemi |
Description: IGBT 600V 63A TO-247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 60 ns Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A Supplier Device Package: TO-247-3 Switching Energy: 1.05mJ (on), 2.5mJ (off) Gate Charge: 162 nC Current - Collector (Ic) (Max): 63 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 252 A Power - Max: 208 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| KAI-0340-FBA-CB-AA-SINGLE | onsemi |
Description: INTERLINE CCD IMAGE SEN Voltage - Supply: 14.5V ~ 15.5V Operating Temperature: -50°C ~ 70°C Type: CCD Package / Case: 22-CDIP Module Packaging: Tray Frames per Second: 110.0 Supplier Device Package: 22-CDIP Active Pixel Array: 640H x 480V Pixel Size: 7.4µm x 7.4µm |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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MPS6602RLRA | onsemi |
Description: TRANS NPN 40V 1A TO92 Power - Max: 625 mW Voltage - Collector Emitter Breakdown (Max): 40 V Current - Collector (Ic) (Max): 1 A Supplier Device Package: TO-92 (TO-226) Frequency - Transition: 100MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 1V Current - Collector Cutoff (Max): 100nA Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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LM7815CT | onsemi |
Description: IC REG LINEAR 15V 1A TO220-3 Packaging: Tube Package / Case: TO-220-3 Output Type: Fixed Mounting Type: Through Hole Current - Output: 1A Operating Temperature: -40°C ~ 125°C Output Configuration: Positive Current - Quiescent (Iq): 8 mA Voltage - Input (Max): 35V Number of Regulators: 1 Supplier Device Package: TO-220-3 Voltage - Output (Min/Fixed): 15V PSRR: 70dB (120Hz) Voltage Dropout (Max): 2V @ 1A (Typ) Protection Features: Over Temperature, Short Circuit |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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KSC945CGBU | onsemi |
Description: TRANS NPN 50V 0.15A TO-92-3 Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 6V Frequency - Transition: 300MHz Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 250 mW |
на замовлення 240470 шт: термін постачання 21-31 дні (днів) |
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FAN7602BN | onsemi |
Description: IC OFFLINE SWITCH FLYBACK 8DIP Packaging: Tube Package / Case: 8-DIP (0.300", 7.62mm) Mounting Type: Through Hole Operating Temperature: -25°C ~ 125°C (TA) Duty Cycle: 75% Frequency - Switching: 65kHz Internal Switch(s): No Output Isolation: Isolated Topology: Flyback Voltage - Supply (Vcc/Vdd): 8V ~ 20V Supplier Device Package: 8-DIP Fault Protection: Over Load, Over Voltage Voltage - Start Up: 12 V Power (Watts): 48 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BUT11A | onsemi |
Description: TRANS NPN 450V 5A TO-220-3 Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 2.5A Current - Collector Cutoff (Max): 1mA Supplier Device Package: TO-220-3 Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 450 V Power - Max: 100 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BUT11ATU | onsemi |
Description: TRANS NPN 450V 5A TO-220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 2.5A Current - Collector Cutoff (Max): 1mA Supplier Device Package: TO-220-3 Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 450 V Power - Max: 100 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NCL2801CDFDR2G | onsemi |
Description: ENHANCED HIGH-EFFICIENCY POWER F Mode: Critical Conduction (CRM), Discontinuous Conduction (DCM) Voltage - Supply: 10.5V Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) Current - Startup: 10 µA Supplier Device Package: 8-SOIC |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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NCL2801CDFDR2G | onsemi |
Description: ENHANCED HIGH-EFFICIENCY POWER F Current - Startup: 10 µA Supplier Device Package: 8-SOIC Mode: Critical Conduction (CRM), Discontinuous Conduction (DCM) Voltage - Supply: 10.5V Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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FJY3002R | onsemi |
Description: TRANS PREBIAS NPN 50V SC89-3 Resistors Included: R1 and R2 Resistor - Emitter Base (R2): 10 kOhms Resistor - Base (R1): 10 kOhms Frequency - Transition: 250 MHz Power - Max: 200 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Supplier Device Package: SC-89-3 DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Transistor Type: NPN - Pre-Biased Mounting Type: Surface Mount Package / Case: SC-89, SOT-490 Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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1N4743A | onsemi |
Description: DIODE ZENER 13V 1W DO41 Packaging: Bulk Tolerance: ±5% Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C Voltage - Zener (Nom) (Vz): 13 V Impedance (Max) (Zzt): 10 Ohms Supplier Device Package: DO-41 Power - Max: 1 W Current - Reverse Leakage @ Vr: 5 µA @ 9.9 V |
на замовлення 9002 шт: термін постачання 21-31 дні (днів) |
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UJ4C075023B7S | onsemi |
Description: 750V/23MOHM, N-OFF SIC CASCODE, Technology: SiCFET (Cascode SiCJFET) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V Drain to Source Voltage (Vdss): 750 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 12V Supplier Device Package: D2PAK-7 Vgs(th) (Max) @ Id: 6V @ 10mA Power Dissipation (Max): 278W (Tc) Rds On (Max) @ Id, Vgs: 29mOhm @ 40A, 12V Current - Continuous Drain (Id) @ 25°C: 64A (Tc) FET Type: N-Channel |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||||||
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UJ4C075023B7S | onsemi |
Description: 750V/23MOHM, N-OFF SIC CASCODE, Drain to Source Voltage (Vdss): 750 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 12V Supplier Device Package: D2PAK-7 Vgs(th) (Max) @ Id: 6V @ 10mA Power Dissipation (Max): 278W (Tc) Rds On (Max) @ Id, Vgs: 29mOhm @ 40A, 12V Current - Continuous Drain (Id) @ 25°C: 64A (Tc) FET Type: N-Channel Technology: SiCFET (Cascode SiCJFET) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V Packaging: Cut Tape (CT) |
на замовлення 445 шт: термін постачання 21-31 дні (днів) |
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NCV8505D2T50R4G | onsemi |
Description: IC REG LINEAR 5V 400MA D2PAK-7 Qualification: AEC-Q100 Current - Supply (Max): 45 mA Protection Features: Over Temperature, Reverse Polarity, Short Circuit Voltage Dropout (Max): 0.6V @ 400mA Grade: Automotive Control Features: Enable, Reset Voltage - Output (Min/Fixed): 5V Supplier Device Package: D2PAK-7 Number of Regulators: 1 Voltage - Input (Max): 45V Current - Quiescent (Iq): 350 µA Output Configuration: Positive Operating Temperature: -40°C ~ 150°C Current - Output: 400mA Mounting Type: Surface Mount Output Type: Fixed Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Packaging: Tape & Reel (TR) |
на замовлення 13500 шт: термін постачання 21-31 дні (днів) |
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NCV8505D2T50R4G | onsemi |
Description: IC REG LINEAR 5V 400MA D2PAK-7 Output Configuration: Positive Operating Temperature: -40°C ~ 150°C Current - Output: 400mA Mounting Type: Surface Mount Output Type: Fixed Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Packaging: Cut Tape (CT) Qualification: AEC-Q100 Current - Supply (Max): 45 mA Protection Features: Over Temperature, Reverse Polarity, Short Circuit Voltage Dropout (Max): 0.6V @ 400mA Grade: Automotive Control Features: Enable, Reset Voltage - Output (Min/Fixed): 5V Supplier Device Package: D2PAK-7 Number of Regulators: 1 Voltage - Input (Max): 45V Current - Quiescent (Iq): 350 µA |
на замовлення 13876 шт: термін постачання 21-31 дні (днів) |
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NVBG095N065SC1 | onsemi |
Description: SIC MOS D2PAK-7L 650V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 18 V Drain to Source Voltage (Vdss): 650 V Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Grade: Automotive Supplier Device Package: D2PAK-7 Vgs(th) (Max) @ Id: 4.3V @ 4mA Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 105mOhm @ 12A, 18V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 956 pF @ 325 V |
на замовлення 5600 шт: термін постачання 21-31 дні (днів) |
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NVBG095N065SC1 | onsemi |
Description: SIC MOS D2PAK-7L 650V Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 956 pF @ 325 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 18 V Drain to Source Voltage (Vdss): 650 V Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Grade: Automotive Supplier Device Package: D2PAK-7 Vgs(th) (Max) @ Id: 4.3V @ 4mA Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 105mOhm @ 12A, 18V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Packaging: Cut Tape (CT) |
на замовлення 6323 шт: термін постачання 21-31 дні (днів) |
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UJ4C075044B7S | onsemi |
Description: 750V/44MOHM, N-OFF SIC CASCODE, Rds On (Max) @ Id, Vgs: 56mOhm @ 25A, 12V Current - Continuous Drain (Id) @ 25°C: 35.6A (Tc) FET Type: N-Channel Technology: SiCFET (Cascode SiCJFET) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V Drain to Source Voltage (Vdss): 750 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 12V Supplier Device Package: D2PAK-7 Vgs(th) (Max) @ Id: 6V @ 10mA Power Dissipation (Max): 181W (Tc) |
на замовлення 19200 шт: термін постачання 21-31 дні (днів) |
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UJ4C075044B7S | onsemi |
Description: 750V/44MOHM, N-OFF SIC CASCODE, Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V Drain to Source Voltage (Vdss): 750 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 12V Supplier Device Package: D2PAK-7 Vgs(th) (Max) @ Id: 6V @ 10mA Power Dissipation (Max): 181W (Tc) Rds On (Max) @ Id, Vgs: 56mOhm @ 25A, 12V Current - Continuous Drain (Id) @ 25°C: 35.6A (Tc) FET Type: N-Channel Technology: SiCFET (Cascode SiCJFET) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Packaging: Cut Tape (CT) |
на замовлення 19263 шт: термін постачання 21-31 дні (днів) |
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BZX85C18-T50R | onsemi |
Description: DIODE ZENER 18V 1W DO204AL Packaging: Bulk Tolerance: ±5% Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C (TJ) Voltage - Zener (Nom) (Vz): 18 V Impedance (Max) (Zzt): 20 Ohms Supplier Device Package: DO-204AL (DO-41) Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 500 nA @ 12.5 V |
на замовлення 21000 шт: термін постачання 21-31 дні (днів) |
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BZX85C18 | onsemi |
Description: DIODE ZENER 18V 1W DO41 Packaging: Bulk Tolerance: ±6% Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C Voltage - Zener (Nom) (Vz): 18 V Impedance (Max) (Zzt): 20 Ohms Supplier Device Package: DO-41 Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 500 nA @ 12.5 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BZX85C18-T50R | onsemi |
Description: DIODE ZENER 18V 1W DO41 Packaging: Tape & Reel (TR) Tolerance: ±6% Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C Voltage - Zener (Nom) (Vz): 18 V Impedance (Max) (Zzt): 20 Ohms Supplier Device Package: DO-41 Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 500 nA @ 12.5 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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LA1654FN-TLM-E-ON | onsemi |
Description: TIME CODE RECEPTION IC Packaging: Bulk |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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DM74ALS245AMSAX | onsemi |
Description: IC TXRX 4.5V/5.5V 20-SSOP Supplier Device Package: 20-SSOP Current - Output High, Low: 15mA, 24mA Number of Bits per Element: 8 Voltage - Supply: 4.5V ~ 5.5V Operating Temperature: 0°C ~ 70°C (TA) Logic Type: Transceiver, Non-Inverting Number of Elements: 1 Mounting Type: Surface Mount Output Type: 3-State Package / Case: 20-SSOP (0.209", 5.30mm Width) Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NP2100SAT3G | onsemi |
Description: THYRISTOR 180V 50A DO-214AA Packaging: Bulk Current - Peak Pulse (10/1000µs): 50 A Current - Hold (Ih): 150 mA Supplier Device Package: SMB Voltage - On State: 4 V Voltage - Off State: 180V Voltage - Breakover: 240V Number of Elements: 1 Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Capacitance: 37pF |
на замовлення 9844 шт: термін постачання 21-31 дні (днів) |
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NP2100SBT3G | onsemi |
Description: THYRISTOR 180V 80A DO-214AA Current - Peak Pulse (10/1000µs): 80 A Current - Hold (Ih): 150 mA Supplier Device Package: SMB Voltage - On State: 4 V Voltage - Off State: 180V Voltage - Breakover: 240V Number of Elements: 1 Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Capacitance: 59pF Packaging: Bulk |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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NP2100SCT3G | onsemi |
Description: THYRISTOR 180V 100A DO-214AA Current - Peak Pulse (10/1000µs): 100 A Current - Hold (Ih): 150 mA Supplier Device Package: SMB Voltage - On State: 4 V Voltage - Off State: 180V Voltage - Breakover: 240V Number of Elements: 1 Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Capacitance: 97pF Packaging: Bulk |
на замовлення 1735 шт: термін постачання 21-31 дні (днів) |
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NVMFWS1D7N04XMT1G | onsemi |
Description: SINGLE N-CHANNEL POWER MOSFET 40 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Package / Case: 8-PowerTDFN, 5 Leads Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 1840 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Grade: Automotive Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Vgs(th) (Max) @ Id: 3.5V @ 70µA Power Dissipation (Max): 75W (Tc) Rds On (Max) @ Id, Vgs: 1.65mOhm @ 14A, 10V Current - Continuous Drain (Id) @ 25°C: 154A (Tc) |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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NVMFWS1D7N04XMT1G | onsemi |
Description: SINGLE N-CHANNEL POWER MOSFET 40 Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 1840 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Grade: Automotive Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Vgs(th) (Max) @ Id: 3.5V @ 70µA Power Dissipation (Max): 75W (Tc) Rds On (Max) @ Id, Vgs: 1.65mOhm @ 14A, 10V Current - Continuous Drain (Id) @ 25°C: 154A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Package / Case: 8-PowerTDFN, 5 Leads Packaging: Cut Tape (CT) |
на замовлення 4297 шт: термін постачання 21-31 дні (днів) |
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NVMFS5834NLWFT1G-UM | onsemi |
Description: POWER MOSFET 40V, 75A, 9.3 MOHM, Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Package / Case: 8-PowerTDFN, 5 Leads Packaging: Cut Tape (CT) Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 1231 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Grade: Automotive Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 3.6W (Ta), 107W (Tc) Rds On (Max) @ Id, Vgs: 9.3mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 75A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NVMFS5834NLWFT1G-UM | onsemi |
Description: POWER MOSFET 40V, 75A, 9.3 MOHM, Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Grade: Automotive Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 3.6W (Ta), 107W (Tc) Rds On (Max) @ Id, Vgs: 9.3mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 75A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Package / Case: 8-PowerTDFN, 5 Leads Packaging: Bulk Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 1231 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. | ||||||||||||||
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7WBD3306DTR2G | onsemi |
Description: IC BUS SWITCH 1 X 1:1 8-TSSOP Supplier Device Package: 8-TSSOP Voltage Supply Source: Single Supply Independent Circuits: 2 Voltage - Supply: 4V ~ 5.5V Operating Temperature: -55°C ~ 125°C Type: Bus Switch Circuit: 1 x 1:1 Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Packaging: Bulk |
на замовлення 170165 шт: термін постачання 21-31 дні (днів) |
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7WBD3306AMUTCG | onsemi |
Description: IC BUS SWITCH 1 X 1:1 8-UDFN Supplier Device Package: 8-UDFN (1.8x1.2) Voltage Supply Source: Single Supply Independent Circuits: 2 Voltage - Supply: 4V ~ 5.5V Operating Temperature: -55°C ~ 125°C Type: Bus Switch Circuit: 1 x 1:1 Mounting Type: Surface Mount Package / Case: 8-UFDFN Packaging: Bulk |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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7WBD3306MUTAG | onsemi |
Description: IC BUS SWITCH 1 X 1:1 8-UDFN Independent Circuits: 2 Voltage - Supply: 4V ~ 5.5V Operating Temperature: -55°C ~ 125°C Type: Bus Switch Circuit: 1 x 1:1 Mounting Type: Surface Mount Package / Case: 8-UFDFN Packaging: Bulk Supplier Device Package: 8-UDFN (1.8x1.2) Voltage Supply Source: Single Supply |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
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SECO-NCP51561BADWR2G-GEVB | onsemi |
Description: APPLICATION DAUGHTER-CARD FOR NC Utilized IC / Part: NCP51561 Contents: Board(s) Type: Power Management Function: Gate Driver Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NZ8F9V1MX2WT5G | onsemi |
Description: DIODE ZENER 9.1V 250MW 2-X2DFNW Current - Reverse Leakage @ Vr: 500 nA @ 6 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Power - Max: 250 mW Supplier Device Package: 2-X2DFNW (1x0.6) Impedance (Max) (Zzt): 30 Ohms Voltage - Zener (Nom) (Vz): 9.1 V Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount, Wettable Flank Package / Case: 2-XDFN Tolerance: ±5% Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 8000 шт В кошику од. на суму грн. | ||||||||||||||
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NZ8F9V1MX2WT5G | onsemi |
Description: DIODE ZENER 9.1V 250MW 2-X2DFNW Package / Case: 2-XDFN Tolerance: ±5% Packaging: Cut Tape (CT) Current - Reverse Leakage @ Vr: 500 nA @ 6 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Power - Max: 250 mW Supplier Device Package: 2-X2DFNW (1x0.6) Impedance (Max) (Zzt): 30 Ohms Voltage - Zener (Nom) (Vz): 9.1 V Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount, Wettable Flank |
на замовлення 4565 шт: термін постачання 21-31 дні (днів) |
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NSVBASH21MX2WT5G | onsemi |
Description: DIODE STANDARD 250V 0.2A X2DFNW2 Capacitance @ Vr, F: 3pF @ 0V, 1MHz Technology: Standard Reverse Recovery Time (trr): 50 ns Speed: Small Signal =< 200mA (Io), Any Speed Mounting Type: Surface Mount, Wettable Flank Package / Case: 2-XDFN Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 100 nA @ 200 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA Voltage - DC Reverse (Vr) (Max): 250 V Grade: Automotive Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: 2-X2DFNW (1x0.6) Current - Average Rectified (Io): 200mA |
товару немає в наявності |
Мінімальне замовлення: 8000 шт В кошику од. на суму грн. | ||||||||||||||
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NSVBASH21MX2WT5G | onsemi |
Description: DIODE STANDARD 250V 0.2A X2DFNW2 Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 100 nA @ 200 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA Voltage - DC Reverse (Vr) (Max): 250 V Grade: Automotive Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: 2-X2DFNW (1x0.6) Current - Average Rectified (Io): 200mA Capacitance @ Vr, F: 3pF @ 0V, 1MHz Technology: Standard Reverse Recovery Time (trr): 50 ns Speed: Small Signal =< 200mA (Io), Any Speed Mounting Type: Surface Mount, Wettable Flank Package / Case: 2-XDFN Packaging: Cut Tape (CT) |
на замовлення 6460 шт: термін постачання 21-31 дні (днів) |
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SZNZ8F9V1MX2WT5G | onsemi |
Description: DIODE ZENER 9.1V 250MW 2-X2DFNW Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 500 nA @ 6 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Power - Max: 250 mW Grade: Automotive Supplier Device Package: 2-X2DFNW (1x0.6) Impedance (Max) (Zzt): 30 Ohms Voltage - Zener (Nom) (Vz): 9.1 V Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount, Wettable Flank Package / Case: 2-XDFN Tolerance: ±5% Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 8000 шт В кошику од. на суму грн. | ||||||||||||||
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SZNZ8F9V1MX2WT5G | onsemi |
Description: DIODE ZENER 9.1V 250MW 2-X2DFNW Package / Case: 2-XDFN Tolerance: ±5% Packaging: Cut Tape (CT) Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 500 nA @ 6 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Power - Max: 250 mW Grade: Automotive Supplier Device Package: 2-X2DFNW (1x0.6) Impedance (Max) (Zzt): 30 Ohms Voltage - Zener (Nom) (Vz): 9.1 V Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount, Wettable Flank |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SZNZ8F5V1MX2WT5G | onsemi |
Description: DIODE ZENER 5.1V 250MW 2-X2DFNW Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount, Wettable Flank Package / Case: 2-XDFN Tolerance: ±5% Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 2 µA @ 1.5 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Power - Max: 250 mW Grade: Automotive Supplier Device Package: 2-X2DFNW (1x0.6) Impedance (Max) (Zzt): 80 Ohms Voltage - Zener (Nom) (Vz): 5.1 V |
на замовлення 136000 шт: термін постачання 21-31 дні (днів) |
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| 1N5338B |
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Виробник: onsemi
Description: DIODE ZENER 5.1V 5W AXIAL
Packaging: Bulk
Tolerance: ±5%
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 1.5 Ohms
Supplier Device Package: Axial
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 1 V
Description: DIODE ZENER 5.1V 5W AXIAL
Packaging: Bulk
Tolerance: ±5%
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 1.5 Ohms
Supplier Device Package: Axial
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 1 V
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| SIS5142D2R2G |
на замовлення 60000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2019+ | 10.06 грн |
| NCP303750MNTWG |
|
Виробник: onsemi
Description: 50A DCR DRMOS WITH OCP - 5X5
Features: Bootstrap Circuit
Packaging: Tape & Reel (TR)
Supplier Device Package: 31-PQFN (5x5)
Voltage - Load: 2.8V ~ 16V
Technology: NMOS
Current - Peak Output: 110A
Current - Output / Channel: 50A
Applications: Synchronous Buck Converters
Voltage - Supply: 2.8V ~ 5.5V, 4.5V ~ 16V
Output Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: On/Off, PWM
Mounting Type: Surface Mount
Package / Case: 31-PowerWFQFN
Load Type: Inductive, Capacitive
Fault Protection: Current Limiting, Over Temperature, UVLO
Description: 50A DCR DRMOS WITH OCP - 5X5
Features: Bootstrap Circuit
Packaging: Tape & Reel (TR)
Supplier Device Package: 31-PQFN (5x5)
Voltage - Load: 2.8V ~ 16V
Technology: NMOS
Current - Peak Output: 110A
Current - Output / Channel: 50A
Applications: Synchronous Buck Converters
Voltage - Supply: 2.8V ~ 5.5V, 4.5V ~ 16V
Output Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: On/Off, PWM
Mounting Type: Surface Mount
Package / Case: 31-PowerWFQFN
Load Type: Inductive, Capacitive
Fault Protection: Current Limiting, Over Temperature, UVLO
на замовлення 3171000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 53.82 грн |
| 6000+ | 50.72 грн |
| NCP303750MNTWG |
|
Виробник: onsemi
Description: 50A DCR DRMOS WITH OCP - 5X5
Voltage - Supply: 2.8V ~ 5.5V, 4.5V ~ 16V
Output Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: On/Off, PWM
Mounting Type: Surface Mount
Package / Case: 31-PowerWFQFN
Features: Bootstrap Circuit
Packaging: Cut Tape (CT)
Load Type: Inductive, Capacitive
Fault Protection: Current Limiting, Over Temperature, UVLO
Supplier Device Package: 31-PQFN (5x5)
Voltage - Load: 2.8V ~ 16V
Technology: NMOS
Current - Peak Output: 110A
Current - Output / Channel: 50A
Applications: Synchronous Buck Converters
Description: 50A DCR DRMOS WITH OCP - 5X5
Voltage - Supply: 2.8V ~ 5.5V, 4.5V ~ 16V
Output Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: On/Off, PWM
Mounting Type: Surface Mount
Package / Case: 31-PowerWFQFN
Features: Bootstrap Circuit
Packaging: Cut Tape (CT)
Load Type: Inductive, Capacitive
Fault Protection: Current Limiting, Over Temperature, UVLO
Supplier Device Package: 31-PQFN (5x5)
Voltage - Load: 2.8V ~ 16V
Technology: NMOS
Current - Peak Output: 110A
Current - Output / Channel: 50A
Applications: Synchronous Buck Converters
на замовлення 3173238 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 111.84 грн |
| 10+ | 78.90 грн |
| 25+ | 71.62 грн |
| 100+ | 59.74 грн |
| 250+ | 56.18 грн |
| 500+ | 54.04 грн |
| 1000+ | 52.77 грн |
| FDMF6707C |
|
Виробник: onsemi
Description: IC HALF BRIDGE DRIVER 50A 40PQFN
Package / Case: 40-PowerTFQFN
Features: Bootstrap Circuit, Status Flag
Packaging: Bulk
Load Type: Inductive
Fault Protection: Over Temperature, Shoot-Through, UVLO
Supplier Device Package: 40-PQFN (6x6)
Voltage - Load: 3V ~ 15V
Technology: DrMOS
Current - Output / Channel: 50A
Applications: Synchronous Buck Converters
Rds On (Typ): 1Ohm LS, 1Ohm HS
Voltage - Supply: 4.5V ~ 5.5V
Output Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: PWM
Mounting Type: Surface Mount
Description: IC HALF BRIDGE DRIVER 50A 40PQFN
Package / Case: 40-PowerTFQFN
Features: Bootstrap Circuit, Status Flag
Packaging: Bulk
Load Type: Inductive
Fault Protection: Over Temperature, Shoot-Through, UVLO
Supplier Device Package: 40-PQFN (6x6)
Voltage - Load: 3V ~ 15V
Technology: DrMOS
Current - Output / Channel: 50A
Applications: Synchronous Buck Converters
Rds On (Typ): 1Ohm LS, 1Ohm HS
Voltage - Supply: 4.5V ~ 5.5V
Output Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: PWM
Mounting Type: Surface Mount
на замовлення 108000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 92+ | 218.67 грн |
| FDMF6705 |
|
Виробник: onsemi
Description: IC HALF BRIDGE DRIVER 38A 40PQFN
Load Type: Inductive
Fault Protection: Over Temperature, Shoot-Through, UVLO
Supplier Device Package: 40-PQFN (6x6)
Voltage - Load: 3V ~ 24V
Technology: DrMOS
Current - Output / Channel: 38A
Applications: Synchronous Buck Converters
Rds On (Typ): 1Ohm LS, 1Ohm HS
Voltage - Supply: 4.5V ~ 5.5V
Output Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: PWM
Mounting Type: Surface Mount
Package / Case: 40-PowerTFQFN
Features: Bootstrap Circuit, Status Flag
Packaging: Tape & Reel (TR)
Description: IC HALF BRIDGE DRIVER 38A 40PQFN
Load Type: Inductive
Fault Protection: Over Temperature, Shoot-Through, UVLO
Supplier Device Package: 40-PQFN (6x6)
Voltage - Load: 3V ~ 24V
Technology: DrMOS
Current - Output / Channel: 38A
Applications: Synchronous Buck Converters
Rds On (Typ): 1Ohm LS, 1Ohm HS
Voltage - Supply: 4.5V ~ 5.5V
Output Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: PWM
Mounting Type: Surface Mount
Package / Case: 40-PowerTFQFN
Features: Bootstrap Circuit, Status Flag
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| FDMF6705 |
|
Виробник: onsemi
Description: IC HALF BRIDGE DRIVER 38A 40PQFN
Technology: DrMOS
Current - Output / Channel: 38A
Applications: Synchronous Buck Converters
Rds On (Typ): 1Ohm LS, 1Ohm HS
Voltage - Supply: 4.5V ~ 5.5V
Output Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: PWM
Mounting Type: Surface Mount
Package / Case: 40-PowerTFQFN
Features: Bootstrap Circuit, Status Flag
Packaging: Cut Tape (CT)
Load Type: Inductive
Fault Protection: Over Temperature, Shoot-Through, UVLO
Supplier Device Package: 40-PQFN (6x6)
Voltage - Load: 3V ~ 24V
Description: IC HALF BRIDGE DRIVER 38A 40PQFN
Technology: DrMOS
Current - Output / Channel: 38A
Applications: Synchronous Buck Converters
Rds On (Typ): 1Ohm LS, 1Ohm HS
Voltage - Supply: 4.5V ~ 5.5V
Output Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: PWM
Mounting Type: Surface Mount
Package / Case: 40-PowerTFQFN
Features: Bootstrap Circuit, Status Flag
Packaging: Cut Tape (CT)
Load Type: Inductive
Fault Protection: Over Temperature, Shoot-Through, UVLO
Supplier Device Package: 40-PQFN (6x6)
Voltage - Load: 3V ~ 24V
на замовлення 2929 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 294.34 грн |
| 10+ | 186.89 грн |
| 100+ | 132.07 грн |
| 500+ | 102.01 грн |
| 1000+ | 94.96 грн |
| FDMF6823B |
|
Виробник: onsemi
Description: IC HALF BRIDGE DRIVER 55A 40PQFN
Packaging: Tape & Reel (TR)
Features: Bootstrap Circuit, Diode Emulation
Package / Case: 40-PowerTFQFN
Mounting Type: Surface Mount
Interface: Logic, PWM
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Rds On (Typ): 1Ohm LS, 1Ohm HS
Applications: Synchronous Buck Converters
Current - Output / Channel: 55A
Current - Peak Output: 55A
Technology: DrMOS, Power MOSFET
Voltage - Load: 3V ~ 16V
Supplier Device Package: 40-PQFN (6x6)
Fault Protection: Over Temperature, Shoot-Through, UVLO
Load Type: Inductive, Capacitive, Resistive
Description: IC HALF BRIDGE DRIVER 55A 40PQFN
Packaging: Tape & Reel (TR)
Features: Bootstrap Circuit, Diode Emulation
Package / Case: 40-PowerTFQFN
Mounting Type: Surface Mount
Interface: Logic, PWM
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Rds On (Typ): 1Ohm LS, 1Ohm HS
Applications: Synchronous Buck Converters
Current - Output / Channel: 55A
Current - Peak Output: 55A
Technology: DrMOS, Power MOSFET
Voltage - Load: 3V ~ 16V
Supplier Device Package: 40-PQFN (6x6)
Fault Protection: Over Temperature, Shoot-Through, UVLO
Load Type: Inductive, Capacitive, Resistive
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В кошику
од. на суму грн.
| FDMF6823B |
|
Виробник: onsemi
Description: IC HALF BRIDGE DRIVER 55A 40PQFN
Packaging: Cut Tape (CT)
Features: Bootstrap Circuit, Diode Emulation
Package / Case: 40-PowerTFQFN
Mounting Type: Surface Mount
Interface: Logic, PWM
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Rds On (Typ): 1Ohm LS, 1Ohm HS
Applications: Synchronous Buck Converters
Current - Output / Channel: 55A
Current - Peak Output: 55A
Technology: DrMOS, Power MOSFET
Voltage - Load: 3V ~ 16V
Supplier Device Package: 40-PQFN (6x6)
Fault Protection: Over Temperature, Shoot-Through, UVLO
Load Type: Inductive, Capacitive, Resistive
Description: IC HALF BRIDGE DRIVER 55A 40PQFN
Packaging: Cut Tape (CT)
Features: Bootstrap Circuit, Diode Emulation
Package / Case: 40-PowerTFQFN
Mounting Type: Surface Mount
Interface: Logic, PWM
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Rds On (Typ): 1Ohm LS, 1Ohm HS
Applications: Synchronous Buck Converters
Current - Output / Channel: 55A
Current - Peak Output: 55A
Technology: DrMOS, Power MOSFET
Voltage - Load: 3V ~ 16V
Supplier Device Package: 40-PQFN (6x6)
Fault Protection: Over Temperature, Shoot-Through, UVLO
Load Type: Inductive, Capacitive, Resistive
на замовлення 2998 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 352.59 грн |
| 10+ | 225.63 грн |
| 100+ | 160.98 грн |
| 500+ | 125.17 грн |
| 1000+ | 116.86 грн |
| SS9012HBU |
|
Виробник: onsemi
Description: TRANS PNP 20V 0.5A TO-92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 144 @ 50mA, 1V
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 625 mW
Description: TRANS PNP 20V 0.5A TO-92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 144 @ 50mA, 1V
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 625 mW
товару немає в наявності
В кошику
од. на суму грн.
| BD136 |
|
Виробник: onsemi
Description: TRANS PNP 45V 1.5A TO-126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
Supplier Device Package: TO-126
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 1.25 W
Description: TRANS PNP 45V 1.5A TO-126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
Supplier Device Package: TO-126
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 1.25 W
товару немає в наявності
Мінімальне замовлення: 500 шт
В кошику
од. на суму грн.
| HLMP1301 |
|
Виробник: onsemi
Description: LED RED DIFFUSED T-1 T/H
Lens Transparency: Diffused
Supplier Device Package: T-1
Wavelength - Peak: 635nm
Height (Max): 6.30mm
Viewing Angle: 90°
Current - Test: 10mA
Lens Color: Red
Voltage - Forward (Vf) (Typ): 2V
Configuration: Standard
Millicandela Rating: 2.5mcd
Mounting Type: Through Hole
Color: Red
Package / Case: Radial
Packaging: Bulk
Lens Size: 3mm, T-1
Lens Style: Round with Domed Top
Description: LED RED DIFFUSED T-1 T/H
Lens Transparency: Diffused
Supplier Device Package: T-1
Wavelength - Peak: 635nm
Height (Max): 6.30mm
Viewing Angle: 90°
Current - Test: 10mA
Lens Color: Red
Voltage - Forward (Vf) (Typ): 2V
Configuration: Standard
Millicandela Rating: 2.5mcd
Mounting Type: Through Hole
Color: Red
Package / Case: Radial
Packaging: Bulk
Lens Size: 3mm, T-1
Lens Style: Round with Domed Top
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| MBR6045PT |
|
Виробник: onsemi
Description: DIODE ARRAY SCHOT 45V 30A SOT-93
Packaging: Tube
Package / Case: TO-218-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: SOT-93
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 30 A
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
Description: DIODE ARRAY SCHOT 45V 30A SOT-93
Packaging: Tube
Package / Case: TO-218-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: SOT-93
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 30 A
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
товару немає в наявності
Мінімальне замовлення: 30 шт
В кошику
од. на суму грн.
| SBRS8120NT3G |
|
Виробник: onsemi
Description: DIODE SCHOTTKY 20V 1A SMB
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 20 V
Grade: Automotive
Operating Temperature - Junction: -65°C ~ 125°C
Supplier Device Package: SMB
Current - Average Rectified (Io): 1A
Description: DIODE SCHOTTKY 20V 1A SMB
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 20 V
Grade: Automotive
Operating Temperature - Junction: -65°C ~ 125°C
Supplier Device Package: SMB
Current - Average Rectified (Io): 1A
на замовлення 22500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 7.25 грн |
| 5000+ | 6.43 грн |
| SBRS8120NT3G |
|
Виробник: onsemi
Description: DIODE SCHOTTKY 20V 1A SMB
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 20 V
Grade: Automotive
Operating Temperature - Junction: -65°C ~ 125°C
Supplier Device Package: SMB
Current - Average Rectified (Io): 1A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Cut Tape (CT)
Description: DIODE SCHOTTKY 20V 1A SMB
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 20 V
Grade: Automotive
Operating Temperature - Junction: -65°C ~ 125°C
Supplier Device Package: SMB
Current - Average Rectified (Io): 1A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Cut Tape (CT)
на замовлення 24755 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 30.29 грн |
| 16+ | 19.52 грн |
| 100+ | 15.44 грн |
| 500+ | 10.95 грн |
| 1000+ | 9.80 грн |
| IRF540 |
|
Виробник: onsemi
Description: MOSFET N-CH 100V 28A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 77mOhm @ 17A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
Description: MOSFET N-CH 100V 28A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 77mOhm @ 17A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
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| NST3904F3T5G |
|
Виробник: onsemi
Description: TRANS NPN 40V 0.2A SOT-1123
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SOT-1123
Packaging: Bulk
Power - Max: 290 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 200 mA
Supplier Device Package: SOT-1123
Description: TRANS NPN 40V 0.2A SOT-1123
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SOT-1123
Packaging: Bulk
Power - Max: 290 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 200 mA
Supplier Device Package: SOT-1123
на замовлення 1099769 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3524+ | 6.04 грн |
| HGTG30N60C3D |
|
Виробник: onsemi
Description: IGBT 600V 63A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 60 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A
Supplier Device Package: TO-247-3
Switching Energy: 1.05mJ (on), 2.5mJ (off)
Gate Charge: 162 nC
Current - Collector (Ic) (Max): 63 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 252 A
Power - Max: 208 W
Description: IGBT 600V 63A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 60 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A
Supplier Device Package: TO-247-3
Switching Energy: 1.05mJ (on), 2.5mJ (off)
Gate Charge: 162 nC
Current - Collector (Ic) (Max): 63 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 252 A
Power - Max: 208 W
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В кошику
од. на суму грн.
| KAI-0340-FBA-CB-AA-SINGLE |
|
Виробник: onsemi
Description: INTERLINE CCD IMAGE SEN
Voltage - Supply: 14.5V ~ 15.5V
Operating Temperature: -50°C ~ 70°C
Type: CCD
Package / Case: 22-CDIP Module
Packaging: Tray
Frames per Second: 110.0
Supplier Device Package: 22-CDIP
Active Pixel Array: 640H x 480V
Pixel Size: 7.4µm x 7.4µm
Description: INTERLINE CCD IMAGE SEN
Voltage - Supply: 14.5V ~ 15.5V
Operating Temperature: -50°C ~ 70°C
Type: CCD
Package / Case: 22-CDIP Module
Packaging: Tray
Frames per Second: 110.0
Supplier Device Package: 22-CDIP
Active Pixel Array: 640H x 480V
Pixel Size: 7.4µm x 7.4µm
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| MPS6602RLRA |
|
Виробник: onsemi
Description: TRANS NPN 40V 1A TO92
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 1 A
Supplier Device Package: TO-92 (TO-226)
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 1V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Packaging: Bulk
Description: TRANS NPN 40V 1A TO92
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 1 A
Supplier Device Package: TO-92 (TO-226)
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 1V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Packaging: Bulk
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| LM7815CT |
|
Виробник: onsemi
Description: IC REG LINEAR 15V 1A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 8 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: TO-220-3
Voltage - Output (Min/Fixed): 15V
PSRR: 70dB (120Hz)
Voltage Dropout (Max): 2V @ 1A (Typ)
Protection Features: Over Temperature, Short Circuit
Description: IC REG LINEAR 15V 1A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 8 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: TO-220-3
Voltage - Output (Min/Fixed): 15V
PSRR: 70dB (120Hz)
Voltage Dropout (Max): 2V @ 1A (Typ)
Protection Features: Over Temperature, Short Circuit
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| KSC945CGBU |
|
Виробник: onsemi
Description: TRANS NPN 50V 0.15A TO-92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 6V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Description: TRANS NPN 50V 0.15A TO-92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 6V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
на замовлення 240470 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9486+ | 2.04 грн |
| FAN7602BN |
|
Виробник: onsemi
Description: IC OFFLINE SWITCH FLYBACK 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -25°C ~ 125°C (TA)
Duty Cycle: 75%
Frequency - Switching: 65kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8V ~ 20V
Supplier Device Package: 8-DIP
Fault Protection: Over Load, Over Voltage
Voltage - Start Up: 12 V
Power (Watts): 48 W
Description: IC OFFLINE SWITCH FLYBACK 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -25°C ~ 125°C (TA)
Duty Cycle: 75%
Frequency - Switching: 65kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8V ~ 20V
Supplier Device Package: 8-DIP
Fault Protection: Over Load, Over Voltage
Voltage - Start Up: 12 V
Power (Watts): 48 W
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В кошику
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| BUT11A |
|
Виробник: onsemi
Description: TRANS NPN 450V 5A TO-220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 2.5A
Current - Collector Cutoff (Max): 1mA
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 450 V
Power - Max: 100 W
Description: TRANS NPN 450V 5A TO-220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 2.5A
Current - Collector Cutoff (Max): 1mA
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 450 V
Power - Max: 100 W
товару немає в наявності
В кошику
од. на суму грн.
| BUT11ATU |
|
Виробник: onsemi
Description: TRANS NPN 450V 5A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 2.5A
Current - Collector Cutoff (Max): 1mA
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 450 V
Power - Max: 100 W
Description: TRANS NPN 450V 5A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 2.5A
Current - Collector Cutoff (Max): 1mA
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 450 V
Power - Max: 100 W
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В кошику
од. на суму грн.
| NCL2801CDFDR2G |
|
Виробник: onsemi
Description: ENHANCED HIGH-EFFICIENCY POWER F
Mode: Critical Conduction (CRM), Discontinuous Conduction (DCM)
Voltage - Supply: 10.5V
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Current - Startup: 10 µA
Supplier Device Package: 8-SOIC
Description: ENHANCED HIGH-EFFICIENCY POWER F
Mode: Critical Conduction (CRM), Discontinuous Conduction (DCM)
Voltage - Supply: 10.5V
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Current - Startup: 10 µA
Supplier Device Package: 8-SOIC
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| NCL2801CDFDR2G |
|
Виробник: onsemi
Description: ENHANCED HIGH-EFFICIENCY POWER F
Current - Startup: 10 µA
Supplier Device Package: 8-SOIC
Mode: Critical Conduction (CRM), Discontinuous Conduction (DCM)
Voltage - Supply: 10.5V
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: ENHANCED HIGH-EFFICIENCY POWER F
Current - Startup: 10 µA
Supplier Device Package: 8-SOIC
Mode: Critical Conduction (CRM), Discontinuous Conduction (DCM)
Voltage - Supply: 10.5V
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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В кошику
од. на суму грн.
| FJY3002R |
|
Виробник: onsemi
Description: TRANS PREBIAS NPN 50V SC89-3
Resistors Included: R1 and R2
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 10 kOhms
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SC-89-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-89, SOT-490
Packaging: Tape & Reel (TR)
Description: TRANS PREBIAS NPN 50V SC89-3
Resistors Included: R1 and R2
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 10 kOhms
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SC-89-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-89, SOT-490
Packaging: Tape & Reel (TR)
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В кошику
од. на суму грн.
| 1N4743A |
|
Виробник: onsemi
Description: DIODE ZENER 13V 1W DO41
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-41
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 5 µA @ 9.9 V
Description: DIODE ZENER 13V 1W DO41
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-41
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 5 µA @ 9.9 V
на замовлення 9002 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 18+ | 17.86 грн |
| 29+ | 10.32 грн |
| 100+ | 6.44 грн |
| 500+ | 4.44 грн |
| 1000+ | 3.92 грн |
| 3000+ | 3.25 грн |
| 6000+ | 2.87 грн |
| UJ4C075023B7S |
|
Виробник: onsemi
Description: 750V/23MOHM, N-OFF SIC CASCODE,
Technology: SiCFET (Cascode SiCJFET)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V
Drain to Source Voltage (Vdss): 750 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 12V
Supplier Device Package: D2PAK-7
Vgs(th) (Max) @ Id: 6V @ 10mA
Power Dissipation (Max): 278W (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 40A, 12V
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
FET Type: N-Channel
Description: 750V/23MOHM, N-OFF SIC CASCODE,
Technology: SiCFET (Cascode SiCJFET)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V
Drain to Source Voltage (Vdss): 750 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 12V
Supplier Device Package: D2PAK-7
Vgs(th) (Max) @ Id: 6V @ 10mA
Power Dissipation (Max): 278W (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 40A, 12V
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
FET Type: N-Channel
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.
| UJ4C075023B7S |
|
Виробник: onsemi
Description: 750V/23MOHM, N-OFF SIC CASCODE,
Drain to Source Voltage (Vdss): 750 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 12V
Supplier Device Package: D2PAK-7
Vgs(th) (Max) @ Id: 6V @ 10mA
Power Dissipation (Max): 278W (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 40A, 12V
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
FET Type: N-Channel
Technology: SiCFET (Cascode SiCJFET)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V
Packaging: Cut Tape (CT)
Description: 750V/23MOHM, N-OFF SIC CASCODE,
Drain to Source Voltage (Vdss): 750 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 12V
Supplier Device Package: D2PAK-7
Vgs(th) (Max) @ Id: 6V @ 10mA
Power Dissipation (Max): 278W (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 40A, 12V
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
FET Type: N-Channel
Technology: SiCFET (Cascode SiCJFET)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V
Packaging: Cut Tape (CT)
на замовлення 445 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1316.39 грн |
| 10+ | 906.57 грн |
| 100+ | 871.66 грн |
| NCV8505D2T50R4G |
|
Виробник: onsemi
Description: IC REG LINEAR 5V 400MA D2PAK-7
Qualification: AEC-Q100
Current - Supply (Max): 45 mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Voltage Dropout (Max): 0.6V @ 400mA
Grade: Automotive
Control Features: Enable, Reset
Voltage - Output (Min/Fixed): 5V
Supplier Device Package: D2PAK-7
Number of Regulators: 1
Voltage - Input (Max): 45V
Current - Quiescent (Iq): 350 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C
Current - Output: 400mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Tape & Reel (TR)
Description: IC REG LINEAR 5V 400MA D2PAK-7
Qualification: AEC-Q100
Current - Supply (Max): 45 mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Voltage Dropout (Max): 0.6V @ 400mA
Grade: Automotive
Control Features: Enable, Reset
Voltage - Output (Min/Fixed): 5V
Supplier Device Package: D2PAK-7
Number of Regulators: 1
Voltage - Input (Max): 45V
Current - Quiescent (Iq): 350 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C
Current - Output: 400mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Tape & Reel (TR)
на замовлення 13500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 750+ | 117.18 грн |
| 1500+ | 109.89 грн |
| 2250+ | 108.41 грн |
| 3750+ | 100.20 грн |
| 5250+ | 99.30 грн |
| NCV8505D2T50R4G |
|
Виробник: onsemi
Description: IC REG LINEAR 5V 400MA D2PAK-7
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C
Current - Output: 400mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Cut Tape (CT)
Qualification: AEC-Q100
Current - Supply (Max): 45 mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Voltage Dropout (Max): 0.6V @ 400mA
Grade: Automotive
Control Features: Enable, Reset
Voltage - Output (Min/Fixed): 5V
Supplier Device Package: D2PAK-7
Number of Regulators: 1
Voltage - Input (Max): 45V
Current - Quiescent (Iq): 350 µA
Description: IC REG LINEAR 5V 400MA D2PAK-7
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C
Current - Output: 400mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Cut Tape (CT)
Qualification: AEC-Q100
Current - Supply (Max): 45 mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Voltage Dropout (Max): 0.6V @ 400mA
Grade: Automotive
Control Features: Enable, Reset
Voltage - Output (Min/Fixed): 5V
Supplier Device Package: D2PAK-7
Number of Regulators: 1
Voltage - Input (Max): 45V
Current - Quiescent (Iq): 350 µA
на замовлення 13876 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 210.47 грн |
| 10+ | 152.27 грн |
| 25+ | 139.52 грн |
| 100+ | 117.81 грн |
| 250+ | 111.56 грн |
| NVBG095N065SC1 |
|
Виробник: onsemi
Description: SIC MOS D2PAK-7L 650V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 18 V
Drain to Source Voltage (Vdss): 650 V
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Grade: Automotive
Supplier Device Package: D2PAK-7
Vgs(th) (Max) @ Id: 4.3V @ 4mA
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 12A, 18V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 956 pF @ 325 V
Description: SIC MOS D2PAK-7L 650V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 18 V
Drain to Source Voltage (Vdss): 650 V
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Grade: Automotive
Supplier Device Package: D2PAK-7
Vgs(th) (Max) @ Id: 4.3V @ 4mA
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 12A, 18V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 956 pF @ 325 V
на замовлення 5600 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 800+ | 384.93 грн |
| NVBG095N065SC1 |
|
Виробник: onsemi
Description: SIC MOS D2PAK-7L 650V
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 956 pF @ 325 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 18 V
Drain to Source Voltage (Vdss): 650 V
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Grade: Automotive
Supplier Device Package: D2PAK-7
Vgs(th) (Max) @ Id: 4.3V @ 4mA
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 12A, 18V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Cut Tape (CT)
Description: SIC MOS D2PAK-7L 650V
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 956 pF @ 325 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 18 V
Drain to Source Voltage (Vdss): 650 V
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Grade: Automotive
Supplier Device Package: D2PAK-7
Vgs(th) (Max) @ Id: 4.3V @ 4mA
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 12A, 18V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Cut Tape (CT)
на замовлення 6323 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 794.50 грн |
| 10+ | 531.21 грн |
| 100+ | 453.71 грн |
| UJ4C075044B7S |
|
Виробник: onsemi
Description: 750V/44MOHM, N-OFF SIC CASCODE,
Rds On (Max) @ Id, Vgs: 56mOhm @ 25A, 12V
Current - Continuous Drain (Id) @ 25°C: 35.6A (Tc)
FET Type: N-Channel
Technology: SiCFET (Cascode SiCJFET)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V
Drain to Source Voltage (Vdss): 750 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 12V
Supplier Device Package: D2PAK-7
Vgs(th) (Max) @ Id: 6V @ 10mA
Power Dissipation (Max): 181W (Tc)
Description: 750V/44MOHM, N-OFF SIC CASCODE,
Rds On (Max) @ Id, Vgs: 56mOhm @ 25A, 12V
Current - Continuous Drain (Id) @ 25°C: 35.6A (Tc)
FET Type: N-Channel
Technology: SiCFET (Cascode SiCJFET)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V
Drain to Source Voltage (Vdss): 750 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 12V
Supplier Device Package: D2PAK-7
Vgs(th) (Max) @ Id: 6V @ 10mA
Power Dissipation (Max): 181W (Tc)
на замовлення 19200 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 800+ | 488.83 грн |
| UJ4C075044B7S |
|
Виробник: onsemi
Description: 750V/44MOHM, N-OFF SIC CASCODE,
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V
Drain to Source Voltage (Vdss): 750 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 12V
Supplier Device Package: D2PAK-7
Vgs(th) (Max) @ Id: 6V @ 10mA
Power Dissipation (Max): 181W (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 25A, 12V
Current - Continuous Drain (Id) @ 25°C: 35.6A (Tc)
FET Type: N-Channel
Technology: SiCFET (Cascode SiCJFET)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Cut Tape (CT)
Description: 750V/44MOHM, N-OFF SIC CASCODE,
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V
Drain to Source Voltage (Vdss): 750 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 12V
Supplier Device Package: D2PAK-7
Vgs(th) (Max) @ Id: 6V @ 10mA
Power Dissipation (Max): 181W (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 25A, 12V
Current - Continuous Drain (Id) @ 25°C: 35.6A (Tc)
FET Type: N-Channel
Technology: SiCFET (Cascode SiCJFET)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Cut Tape (CT)
на замовлення 19263 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 954.48 грн |
| 10+ | 645.11 грн |
| 100+ | 576.17 грн |
| BZX85C18-T50R |
|
Виробник: onsemi
Description: DIODE ZENER 18V 1W DO204AL
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 12.5 V
Description: DIODE ZENER 18V 1W DO204AL
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 12.5 V
на замовлення 21000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5492+ | 3.40 грн |
| BZX85C18 |
|
Виробник: onsemi
Description: DIODE ZENER 18V 1W DO41
Packaging: Bulk
Tolerance: ±6%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-41
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 12.5 V
Description: DIODE ZENER 18V 1W DO41
Packaging: Bulk
Tolerance: ±6%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-41
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 12.5 V
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В кошику
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| BZX85C18-T50R |
|
Виробник: onsemi
Description: DIODE ZENER 18V 1W DO41
Packaging: Tape & Reel (TR)
Tolerance: ±6%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-41
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 12.5 V
Description: DIODE ZENER 18V 1W DO41
Packaging: Tape & Reel (TR)
Tolerance: ±6%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-41
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 12.5 V
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| LA1654FN-TLM-E-ON |
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 189+ | 106.65 грн |
| DM74ALS245AMSAX |
|
Виробник: onsemi
Description: IC TXRX 4.5V/5.5V 20-SSOP
Supplier Device Package: 20-SSOP
Current - Output High, Low: 15mA, 24mA
Number of Bits per Element: 8
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: 0°C ~ 70°C (TA)
Logic Type: Transceiver, Non-Inverting
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: 3-State
Package / Case: 20-SSOP (0.209", 5.30mm Width)
Packaging: Tape & Reel (TR)
Description: IC TXRX 4.5V/5.5V 20-SSOP
Supplier Device Package: 20-SSOP
Current - Output High, Low: 15mA, 24mA
Number of Bits per Element: 8
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: 0°C ~ 70°C (TA)
Logic Type: Transceiver, Non-Inverting
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: 3-State
Package / Case: 20-SSOP (0.209", 5.30mm Width)
Packaging: Tape & Reel (TR)
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В кошику
од. на суму грн.
| NP2100SAT3G |
|
Виробник: onsemi
Description: THYRISTOR 180V 50A DO-214AA
Packaging: Bulk
Current - Peak Pulse (10/1000µs): 50 A
Current - Hold (Ih): 150 mA
Supplier Device Package: SMB
Voltage - On State: 4 V
Voltage - Off State: 180V
Voltage - Breakover: 240V
Number of Elements: 1
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Capacitance: 37pF
Description: THYRISTOR 180V 50A DO-214AA
Packaging: Bulk
Current - Peak Pulse (10/1000µs): 50 A
Current - Hold (Ih): 150 mA
Supplier Device Package: SMB
Voltage - On State: 4 V
Voltage - Off State: 180V
Voltage - Breakover: 240V
Number of Elements: 1
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Capacitance: 37pF
на замовлення 9844 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1137+ | 17.44 грн |
| NP2100SBT3G |
|
Виробник: onsemi
Description: THYRISTOR 180V 80A DO-214AA
Current - Peak Pulse (10/1000µs): 80 A
Current - Hold (Ih): 150 mA
Supplier Device Package: SMB
Voltage - On State: 4 V
Voltage - Off State: 180V
Voltage - Breakover: 240V
Number of Elements: 1
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Capacitance: 59pF
Packaging: Bulk
Description: THYRISTOR 180V 80A DO-214AA
Current - Peak Pulse (10/1000µs): 80 A
Current - Hold (Ih): 150 mA
Supplier Device Package: SMB
Voltage - On State: 4 V
Voltage - Off State: 180V
Voltage - Breakover: 240V
Number of Elements: 1
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Capacitance: 59pF
Packaging: Bulk
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 865+ | 23.48 грн |
| NP2100SCT3G |
|
Виробник: onsemi
Description: THYRISTOR 180V 100A DO-214AA
Current - Peak Pulse (10/1000µs): 100 A
Current - Hold (Ih): 150 mA
Supplier Device Package: SMB
Voltage - On State: 4 V
Voltage - Off State: 180V
Voltage - Breakover: 240V
Number of Elements: 1
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Capacitance: 97pF
Packaging: Bulk
Description: THYRISTOR 180V 100A DO-214AA
Current - Peak Pulse (10/1000µs): 100 A
Current - Hold (Ih): 150 mA
Supplier Device Package: SMB
Voltage - On State: 4 V
Voltage - Off State: 180V
Voltage - Breakover: 240V
Number of Elements: 1
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Capacitance: 97pF
Packaging: Bulk
на замовлення 1735 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 699+ | 28.84 грн |
| NVMFWS1D7N04XMT1G |
|
Виробник: onsemi
Description: SINGLE N-CHANNEL POWER MOSFET 40
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1840 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Vgs(th) (Max) @ Id: 3.5V @ 70µA
Power Dissipation (Max): 75W (Tc)
Rds On (Max) @ Id, Vgs: 1.65mOhm @ 14A, 10V
Current - Continuous Drain (Id) @ 25°C: 154A (Tc)
Description: SINGLE N-CHANNEL POWER MOSFET 40
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1840 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Vgs(th) (Max) @ Id: 3.5V @ 70µA
Power Dissipation (Max): 75W (Tc)
Rds On (Max) @ Id, Vgs: 1.65mOhm @ 14A, 10V
Current - Continuous Drain (Id) @ 25°C: 154A (Tc)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1500+ | 44.14 грн |
| 3000+ | 41.39 грн |
| NVMFWS1D7N04XMT1G |
|
Виробник: onsemi
Description: SINGLE N-CHANNEL POWER MOSFET 40
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1840 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Vgs(th) (Max) @ Id: 3.5V @ 70µA
Power Dissipation (Max): 75W (Tc)
Rds On (Max) @ Id, Vgs: 1.65mOhm @ 14A, 10V
Current - Continuous Drain (Id) @ 25°C: 154A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Cut Tape (CT)
Description: SINGLE N-CHANNEL POWER MOSFET 40
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1840 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Vgs(th) (Max) @ Id: 3.5V @ 70µA
Power Dissipation (Max): 75W (Tc)
Rds On (Max) @ Id, Vgs: 1.65mOhm @ 14A, 10V
Current - Continuous Drain (Id) @ 25°C: 154A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Cut Tape (CT)
на замовлення 4297 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 90.87 грн |
| 10+ | 63.87 грн |
| 25+ | 57.83 грн |
| 100+ | 48.04 грн |
| 250+ | 45.08 грн |
| 500+ | 43.29 грн |
| NVMFS5834NLWFT1G-UM |
|
Виробник: onsemi
Description: POWER MOSFET 40V, 75A, 9.3 MOHM,
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1231 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 3.6W (Ta), 107W (Tc)
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Description: POWER MOSFET 40V, 75A, 9.3 MOHM,
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1231 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 3.6W (Ta), 107W (Tc)
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
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| NVMFS5834NLWFT1G-UM |
|
Виробник: onsemi
Description: POWER MOSFET 40V, 75A, 9.3 MOHM,
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 3.6W (Ta), 107W (Tc)
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Bulk
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1231 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Description: POWER MOSFET 40V, 75A, 9.3 MOHM,
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 3.6W (Ta), 107W (Tc)
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Bulk
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1231 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
товару немає в наявності
Мінімальне замовлення: 1500 шт
В кошику
од. на суму грн.
| 7WBD3306DTR2G |
|
Виробник: onsemi
Description: IC BUS SWITCH 1 X 1:1 8-TSSOP
Supplier Device Package: 8-TSSOP
Voltage Supply Source: Single Supply
Independent Circuits: 2
Voltage - Supply: 4V ~ 5.5V
Operating Temperature: -55°C ~ 125°C
Type: Bus Switch
Circuit: 1 x 1:1
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Packaging: Bulk
Description: IC BUS SWITCH 1 X 1:1 8-TSSOP
Supplier Device Package: 8-TSSOP
Voltage Supply Source: Single Supply
Independent Circuits: 2
Voltage - Supply: 4V ~ 5.5V
Operating Temperature: -55°C ~ 125°C
Type: Bus Switch
Circuit: 1 x 1:1
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Packaging: Bulk
на замовлення 170165 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1209+ | 16.77 грн |
| 7WBD3306AMUTCG |
|
Виробник: onsemi
Description: IC BUS SWITCH 1 X 1:1 8-UDFN
Supplier Device Package: 8-UDFN (1.8x1.2)
Voltage Supply Source: Single Supply
Independent Circuits: 2
Voltage - Supply: 4V ~ 5.5V
Operating Temperature: -55°C ~ 125°C
Type: Bus Switch
Circuit: 1 x 1:1
Mounting Type: Surface Mount
Package / Case: 8-UFDFN
Packaging: Bulk
Description: IC BUS SWITCH 1 X 1:1 8-UDFN
Supplier Device Package: 8-UDFN (1.8x1.2)
Voltage Supply Source: Single Supply
Independent Circuits: 2
Voltage - Supply: 4V ~ 5.5V
Operating Temperature: -55°C ~ 125°C
Type: Bus Switch
Circuit: 1 x 1:1
Mounting Type: Surface Mount
Package / Case: 8-UFDFN
Packaging: Bulk
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 818+ | 24.82 грн |
| 7WBD3306MUTAG |
|
Виробник: onsemi
Description: IC BUS SWITCH 1 X 1:1 8-UDFN
Independent Circuits: 2
Voltage - Supply: 4V ~ 5.5V
Operating Temperature: -55°C ~ 125°C
Type: Bus Switch
Circuit: 1 x 1:1
Mounting Type: Surface Mount
Package / Case: 8-UFDFN
Packaging: Bulk
Supplier Device Package: 8-UDFN (1.8x1.2)
Voltage Supply Source: Single Supply
Description: IC BUS SWITCH 1 X 1:1 8-UDFN
Independent Circuits: 2
Voltage - Supply: 4V ~ 5.5V
Operating Temperature: -55°C ~ 125°C
Type: Bus Switch
Circuit: 1 x 1:1
Mounting Type: Surface Mount
Package / Case: 8-UFDFN
Packaging: Bulk
Supplier Device Package: 8-UDFN (1.8x1.2)
Voltage Supply Source: Single Supply
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 741+ | 26.83 грн |
| SECO-NCP51561BADWR2G-GEVB |
|
Виробник: onsemi
Description: APPLICATION DAUGHTER-CARD FOR NC
Utilized IC / Part: NCP51561
Contents: Board(s)
Type: Power Management
Function: Gate Driver
Packaging: Bulk
Description: APPLICATION DAUGHTER-CARD FOR NC
Utilized IC / Part: NCP51561
Contents: Board(s)
Type: Power Management
Function: Gate Driver
Packaging: Bulk
товару немає в наявності
В кошику
од. на суму грн.
| NZ8F9V1MX2WT5G |
|
Виробник: onsemi
Description: DIODE ZENER 9.1V 250MW 2-X2DFNW
Current - Reverse Leakage @ Vr: 500 nA @ 6 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 250 mW
Supplier Device Package: 2-X2DFNW (1x0.6)
Impedance (Max) (Zzt): 30 Ohms
Voltage - Zener (Nom) (Vz): 9.1 V
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 2-XDFN
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Description: DIODE ZENER 9.1V 250MW 2-X2DFNW
Current - Reverse Leakage @ Vr: 500 nA @ 6 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 250 mW
Supplier Device Package: 2-X2DFNW (1x0.6)
Impedance (Max) (Zzt): 30 Ohms
Voltage - Zener (Nom) (Vz): 9.1 V
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 2-XDFN
Tolerance: ±5%
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 8000 шт
В кошику
од. на суму грн.
| NZ8F9V1MX2WT5G |
|
Виробник: onsemi
Description: DIODE ZENER 9.1V 250MW 2-X2DFNW
Package / Case: 2-XDFN
Tolerance: ±5%
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 500 nA @ 6 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 250 mW
Supplier Device Package: 2-X2DFNW (1x0.6)
Impedance (Max) (Zzt): 30 Ohms
Voltage - Zener (Nom) (Vz): 9.1 V
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Description: DIODE ZENER 9.1V 250MW 2-X2DFNW
Package / Case: 2-XDFN
Tolerance: ±5%
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 500 nA @ 6 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 250 mW
Supplier Device Package: 2-X2DFNW (1x0.6)
Impedance (Max) (Zzt): 30 Ohms
Voltage - Zener (Nom) (Vz): 9.1 V
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
на замовлення 4565 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 16.31 грн |
| 30+ | 10.17 грн |
| 100+ | 3.94 грн |
| 500+ | 3.33 грн |
| 1000+ | 2.30 грн |
| 2000+ | 2.15 грн |
| NSVBASH21MX2WT5G |
|
Виробник: onsemi
Description: DIODE STANDARD 250V 0.2A X2DFNW2
Capacitance @ Vr, F: 3pF @ 0V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 2-XDFN
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Voltage - DC Reverse (Vr) (Max): 250 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: 2-X2DFNW (1x0.6)
Current - Average Rectified (Io): 200mA
Description: DIODE STANDARD 250V 0.2A X2DFNW2
Capacitance @ Vr, F: 3pF @ 0V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 2-XDFN
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Voltage - DC Reverse (Vr) (Max): 250 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: 2-X2DFNW (1x0.6)
Current - Average Rectified (Io): 200mA
товару немає в наявності
Мінімальне замовлення: 8000 шт
В кошику
од. на суму грн.
| NSVBASH21MX2WT5G |
|
Виробник: onsemi
Description: DIODE STANDARD 250V 0.2A X2DFNW2
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Voltage - DC Reverse (Vr) (Max): 250 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: 2-X2DFNW (1x0.6)
Current - Average Rectified (Io): 200mA
Capacitance @ Vr, F: 3pF @ 0V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 2-XDFN
Packaging: Cut Tape (CT)
Description: DIODE STANDARD 250V 0.2A X2DFNW2
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Voltage - DC Reverse (Vr) (Max): 250 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: 2-X2DFNW (1x0.6)
Current - Average Rectified (Io): 200mA
Capacitance @ Vr, F: 3pF @ 0V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 2-XDFN
Packaging: Cut Tape (CT)
на замовлення 6460 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 28.74 грн |
| 23+ | 13.39 грн |
| 100+ | 9.45 грн |
| 500+ | 6.59 грн |
| 1000+ | 5.70 грн |
| 2000+ | 5.23 грн |
| SZNZ8F9V1MX2WT5G |
|
Виробник: onsemi
Description: DIODE ZENER 9.1V 250MW 2-X2DFNW
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 500 nA @ 6 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 250 mW
Grade: Automotive
Supplier Device Package: 2-X2DFNW (1x0.6)
Impedance (Max) (Zzt): 30 Ohms
Voltage - Zener (Nom) (Vz): 9.1 V
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 2-XDFN
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Description: DIODE ZENER 9.1V 250MW 2-X2DFNW
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 500 nA @ 6 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 250 mW
Grade: Automotive
Supplier Device Package: 2-X2DFNW (1x0.6)
Impedance (Max) (Zzt): 30 Ohms
Voltage - Zener (Nom) (Vz): 9.1 V
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 2-XDFN
Tolerance: ±5%
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 8000 шт
В кошику
од. на суму грн.
| SZNZ8F9V1MX2WT5G |
|
Виробник: onsemi
Description: DIODE ZENER 9.1V 250MW 2-X2DFNW
Package / Case: 2-XDFN
Tolerance: ±5%
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 500 nA @ 6 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 250 mW
Grade: Automotive
Supplier Device Package: 2-X2DFNW (1x0.6)
Impedance (Max) (Zzt): 30 Ohms
Voltage - Zener (Nom) (Vz): 9.1 V
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Description: DIODE ZENER 9.1V 250MW 2-X2DFNW
Package / Case: 2-XDFN
Tolerance: ±5%
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 500 nA @ 6 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 250 mW
Grade: Automotive
Supplier Device Package: 2-X2DFNW (1x0.6)
Impedance (Max) (Zzt): 30 Ohms
Voltage - Zener (Nom) (Vz): 9.1 V
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
товару немає в наявності
В кошику
од. на суму грн.
| SZNZ8F5V1MX2WT5G |
|
Виробник: onsemi
Description: DIODE ZENER 5.1V 250MW 2-X2DFNW
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 2-XDFN
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 2 µA @ 1.5 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 250 mW
Grade: Automotive
Supplier Device Package: 2-X2DFNW (1x0.6)
Impedance (Max) (Zzt): 80 Ohms
Voltage - Zener (Nom) (Vz): 5.1 V
Description: DIODE ZENER 5.1V 250MW 2-X2DFNW
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 2-XDFN
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 2 µA @ 1.5 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 250 mW
Grade: Automotive
Supplier Device Package: 2-X2DFNW (1x0.6)
Impedance (Max) (Zzt): 80 Ohms
Voltage - Zener (Nom) (Vz): 5.1 V
на замовлення 136000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8000+ | 3.89 грн |
| 16000+ | 3.71 грн |
| 24000+ | 3.61 грн |
| 40000+ | 3.13 грн |
| 56000+ | 2.82 грн |
| 80000+ | 2.74 грн |