| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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KST10MTF | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; RF; 25V; 350mW; SOT23 Mounting: SMD Case: SOT23 Type of transistor: NPN Kind of transistor: RF Power dissipation: 0.35W Collector-emitter voltage: 25V Current gain: 60 Frequency: 650MHz Kind of package: reel; tape Polarisation: bipolar |
на замовлення 1123 шт: термін постачання 21-30 дні (днів) |
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| MC74VHC244DTG | ONSEMI |
Category: Buffers, transceivers, driversDescription: IC: digital; 3-state,bus buffer,octal; Ch: 8; CMOS; SMD; TSSOP20 Type of integrated circuit: digital Kind of integrated circuit: 3-state; bus buffer; octal Number of channels: 8 Technology: CMOS Mounting: SMD Case: TSSOP20 Operating temperature: -55...125°C Kind of output: 3-state Supply voltage: 2...5.5V DC Kind of package: tube Family: VHC Manufacturer series: VHC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| MC74VHC244DTR2G | ONSEMI |
Category: Buffers, transceivers, driversDescription: IC: digital; 3-state,bus buffer,octal; Ch: 8; CMOS; SMD; TSSOP20 Type of integrated circuit: digital Kind of integrated circuit: 3-state; bus buffer; octal Number of channels: 8 Technology: CMOS Mounting: SMD Case: TSSOP20 Operating temperature: -55...125°C Kind of output: 3-state Supply voltage: 2...5.5V DC Kind of package: reel; tape Family: VHC Manufacturer series: VHC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| MC74VHC244DWR2G | ONSEMI |
Category: Buffers, transceivers, driversDescription: IC: digital; 3-state,bus buffer,octal; Ch: 8; CMOS; SMD; SO20WB; VHC Type of integrated circuit: digital Kind of integrated circuit: 3-state; bus buffer; octal Number of channels: 8 Technology: CMOS Mounting: SMD Case: SO20WB Operating temperature: -55...125°C Kind of output: 3-state Supply voltage: 2...5.5V DC Kind of package: reel; tape Family: VHC Manufacturer series: VHC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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BZX84C4V7LT1G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 0.3W; 4.7V; SMD; reel,tape; SOT23; single diode; 3uA Type of diode: Zener Power dissipation: 0.3W Zener voltage: 4.7V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Manufacturer series: BZX84C Leakage current: 3µA |
на замовлення 13489 шт: термін постачання 21-30 дні (днів) |
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KSC2073TU | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 150V; 1.5A; 25W; TO220AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 150V Collector current: 1.5A Power dissipation: 25W Case: TO220AB Current gain: 40...140 Mounting: THT Kind of package: tube Frequency: 4MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NSS12100XV6T1G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 12V; 1A; 0.65W; SOT563 Case: SOT563 Mounting: SMD Kind of package: reel; tape Type of transistor: PNP Power dissipation: 0.65W Collector current: 1A Collector-emitter voltage: 12V Current gain: 100 Application: automotive industry Polarisation: bipolar |
на замовлення 8 шт: термін постачання 21-30 дні (днів) |
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BSR16 | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 60V; 0.8A; 0.35W; SOT23,TO236AB Case: SOT23; TO236AB Polarisation: bipolar Mounting: SMD Type of transistor: PNP Collector current: 0.8A Power dissipation: 0.35W Collector-emitter voltage: 60V Frequency: 300MHz Kind of package: reel; tape |
на замовлення 2091 шт: термін постачання 21-30 дні (днів) |
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MC14081BDG | ONSEMI |
Category: Gates, invertersDescription: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C Mounting: SMD Case: SO14 Operating temperature: -55...125°C Delay time: 130ns Number of inputs: 2 Supply voltage: 3...18V DC Type of integrated circuit: digital Kind of gate: AND Kind of package: tube Technology: CMOS Number of channels: quad; 4 Family: HEF4000B |
на замовлення 218 шт: термін постачання 21-30 дні (днів) |
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MC14081BDTR2G | ONSEMI |
Category: Gates, invertersDescription: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 3÷18VDC; -55÷125°C Mounting: SMD Case: TSSOP14 Operating temperature: -55...125°C Delay time: 130ns Number of inputs: 2 Supply voltage: 3...18V DC Type of integrated circuit: digital Kind of gate: AND Kind of package: reel; tape Technology: CMOS Number of channels: quad; 4 Family: HEF4000B |
на замовлення 1900 шт: термін постачання 21-30 дні (днів) |
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HCPL4503M | ONSEMI |
Category: Optocouplers - analog outputDescription: Optocoupler; THT; Ch: 1; OUT: transistor; 5kV; CTR@If: 19-50%@16mA Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 5kV Case: DIP8 Manufacturer series: HCPL4503M CTR@If: 19-50%@16mA Slew rate: 10kV/μs Transfer rate: 1Mbps |
на замовлення 853 шт: термін постачання 21-30 дні (днів) |
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MC14557BDWG | ONSEMI |
Category: Shift registersDescription: IC: digital; shift register; Ch: 1; CMOS; SMD; SO16WB; HEF4000B; tube Type of integrated circuit: digital Kind of integrated circuit: shift register Supply voltage: 3...18V DC Case: SO16WB Mounting: SMD Operating temperature: -55...125°C Kind of package: tube Family: HEF4000B Number of channels: 1 Number of inputs: 12 Technology: CMOS |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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FDMS86101 | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 60A; 104W; PQFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 60A Power dissipation: 104W Case: PQFN8 Gate-source voltage: ±20V On-state resistance: 14mΩ Mounting: SMD Gate charge: 55nC Kind of package: reel; tape Kind of channel: enhancement Technology: PowerTrench® |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| FCMT299N60 | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 7.9A; Idm: 36A; 125W; Power88 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 7.9A Power dissipation: 125W Case: Power88 Gate-source voltage: ±20V On-state resistance: 0.299Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 36A Gate charge: 51nC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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SBCP56-10T1G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 80V; 1A; 1.5W; SOT223-4,TO261-4 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 1A Power dissipation: 1.5W Case: SOT223-4; TO261-4 Current gain: 63...160 Mounting: SMD Kind of package: reel; tape Frequency: 130MHz Application: automotive industry |
на замовлення 181 шт: термін постачання 21-30 дні (днів) |
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SBAS16HT1G | ONSEMI |
Category: SMD universal diodesDescription: Diode: switching; SMD; 100V; 0.2A; 6ns; SOD323; Ufmax: 1.75V; 200mW Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.2A Reverse recovery time: 6ns Semiconductor structure: single diode Capacitance: 2pF Case: SOD323 Max. forward voltage: 1.75V Max. forward impulse current: 36A Power dissipation: 0.2W Kind of package: reel; tape Application: automotive industry Max. load current: 1A |
на замовлення 830 шт: термін постачання 21-30 дні (днів) |
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MC74ACT125DTR2G | ONSEMI |
Category: Buffers, transceivers, driversDescription: IC: digital; buffer,non-inverting; Ch: 4; SMD; TSSOP14; ACT; 2÷6VDC Type of integrated circuit: digital Kind of integrated circuit: buffer; non-inverting Number of channels: 4 Mounting: SMD Case: TSSOP14 Manufacturer series: ACT Operating temperature: -40...85°C Kind of output: 3-state Supply voltage: 2...6V DC |
на замовлення 2265 шт: термін постачання 21-30 дні (днів) |
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FAN3111ESX | ONSEMI |
Category: MOSFET/IGBT driversDescription: IC: driver; low-side,MOSFET gate driver; MillerDrive™; SOT23-5 Case: SOT23-5 Technology: MillerDrive™ Kind of package: reel; tape Operating temperature: -40...125°C Output current: -0.9...1.1A Impulse rise time: 18ns Number of channels: 1 Supply voltage: 4.5...18V DC Type of integrated circuit: driver Pulse fall time: 17ns Kind of integrated circuit: low-side; MOSFET gate driver Mounting: SMD |
на замовлення 1061 шт: термін постачання 21-30 дні (днів) |
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NCP361SNT1G | ONSEMI |
Category: Drivers - integrated circuitsDescription: IC: driver; TSOP5; Ch: 1; Uin: 1.2÷20V; OUT: transistor Type of integrated circuit: driver Case: TSOP5 Mounting: SMD Operating temperature: -40...85°C Application: USB Number of channels: 1 Input voltage: 1.2...20V Threshold on-voltage: 3V Kind of output: transistor |
на замовлення 1893 шт: термін постачання 21-30 дні (днів) |
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FIN1002M5X | ONSEMI |
Category: Interfaces others - integrated circuitsDescription: IC: digital; line receiver,differential,translator; LVDS; SMD Technology: LVDS Type of integrated circuit: digital Kind of package: tube Mounting: SMD Operating temperature: -40...125°C Number of channels: 1 Supply voltage: 3...3.6V DC Kind of integrated circuit: differential; line receiver; translator Case: SOT23-5 |
на замовлення 1645 шт: термін постачання 21-30 дні (днів) |
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2SB815-7-TB-E | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 15V; 0.7A; 0.2W; SC59 Case: SC59 Kind of package: reel; tape Frequency: 250MHz Type of transistor: PNP Mounting: SMD Power dissipation: 0.2W Collector current: 0.7A Collector-emitter voltage: 15V Current gain: 300...600 Polarisation: bipolar |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NCP81080DR2G | ONSEMI |
Category: MOSFET/IGBT driversDescription: IC: driver; MOSFET half-bridge; high-side,gate driver; SO8 Mounting: SMD Case: SO8 Operating temperature: -40...140°C Output current: -800...500mA Impulse rise time: 19ns Supply voltage: 5.5...20V DC Pulse fall time: 17ns Kind of integrated circuit: gate driver; high-side Type of integrated circuit: driver Topology: MOSFET half-bridge |
на замовлення 767 шт: термін постачання 21-30 дні (днів) |
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SS12 | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMA; SMD; 20V; 1A; reel,tape; 1.1W Type of diode: Schottky rectifying Case: SMA Mounting: SMD Max. off-state voltage: 20V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.5V Max. forward impulse current: 40A Kind of package: reel; tape Power dissipation: 1.1W |
на замовлення 6350 шт: термін постачання 21-30 дні (днів) |
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BSS123 | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 0.17A; 0.36W; SOT23 Case: SOT23 Mounting: SMD Kind of package: reel; tape Type of transistor: N-MOSFET Gate charge: 2.5nC Drain current: 0.17A Power dissipation: 0.36W On-state resistance: 12Ω Gate-source voltage: ±20V Drain-source voltage: 100V Polarisation: unipolar Kind of channel: enhancement Features of semiconductor devices: logic level |
на замовлення 16303 шт: термін постачання 21-30 дні (днів) |
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BSS123W | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 0.17A; Idm: 0.68A; 0.2W Case: SC70; SOT323 Mounting: SMD Kind of package: reel; tape Type of transistor: N-MOSFET Drain current: 0.17A Power dissipation: 0.2W Pulsed drain current: 0.68A On-state resistance: 10Ω Gate-source voltage: ±20V Drain-source voltage: 100V Polarisation: unipolar Kind of channel: enhancement |
на замовлення 1290 шт: термін постачання 21-30 дні (днів) |
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1N5408G | ONSEMI |
Category: THT universal diodesDescription: Diode: rectifying; THT; 1kV; 3A; bulk; Ifsm: 200A; DO27; Ufmax: 1V Mounting: THT Leakage current: 50µA Max. forward voltage: 1V Load current: 3A Max. forward impulse current: 200A Max. off-state voltage: 1kV Kind of package: bulk Case: DO27 Type of diode: rectifying Semiconductor structure: single diode |
на замовлення 1101 шт: термін постачання 21-30 дні (днів) |
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MOC3022M | ONSEMI |
Category: OptotriacsDescription: Optotriac; 5.3kV; Uout: 400V; DIP6; MOC302XM Type of optocoupler: optotriac Insulation voltage: 5.3kV Kind of output: without zero voltage crossing driver Case: DIP6 Trigger current: 10mA Mounting: THT Output voltage: 400V Manufacturer series: MOC302XM |
на замовлення 527 шт: термін постачання 21-30 дні (днів) |
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MC74VHC1G08DTT1G | ONSEMI |
Category: Gates, invertersDescription: IC: digital; AND; Ch: 1; IN: 2; CMOS; SMD; TSOP5; 2÷5.5VDC; -55÷125°C Type of integrated circuit: digital Number of channels: single; 1 Case: TSOP5 Supply voltage: 2...5.5V DC Mounting: SMD Kind of package: reel; tape Operating temperature: -55...125°C Technology: CMOS Number of inputs: 2 Kind of gate: AND Family: VHC |
на замовлення 3145 шт: термін постачання 21-30 дні (днів) |
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SBAS16HT3G | ONSEMI |
Category: SMD universal diodesDescription: Diode: switching; SMD; 100V; 0.2A; 6ns; SOD323; Ufmax: 1.25V; Ir: 30uA Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.2A Reverse recovery time: 6ns Semiconductor structure: single diode Capacitance: 2pF Case: SOD323 Max. forward voltage: 1.25V Max. forward impulse current: 36A Leakage current: 30µA Power dissipation: 0.2W Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| 1N5407G | ONSEMI |
Category: THT universal diodesDescription: Diode: rectifying; THT; 800V; 3A; bulk; Ifsm: 200A; DO27; Ufmax: 1V Case: DO27 Mounting: THT Type of diode: rectifying Semiconductor structure: single diode Leakage current: 50µA Max. forward voltage: 1V Load current: 3A Max. forward impulse current: 200A Max. off-state voltage: 0.8kV Kind of package: bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NRVTSM260EV2T1G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; POWERMITE; SMD; 60V; 2A; reel,tape Kind of package: reel; tape Type of diode: Schottky rectifying Semiconductor structure: single diode Mounting: SMD Max. forward voltage: 0.65V Load current: 2A Max. load current: 4A Max. forward impulse current: 50A Max. off-state voltage: 60V Case: POWERMITE Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NRVTSM260EV2T3G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; POWERMITE; SMD; 60V; 2A; reel,tape Kind of package: reel; tape Type of diode: Schottky rectifying Semiconductor structure: single diode Mounting: SMD Max. forward voltage: 0.65V Load current: 2A Max. load current: 4A Max. forward impulse current: 50A Max. off-state voltage: 60V Case: POWERMITE Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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ESD9R3.3ST5G | ONSEMI |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.15W; 4.8V; 1A; unidirectional; SOD923; reel,tape; ESD Type of diode: TVS Kind of package: reel; tape Case: SOD923 Mounting: SMD Semiconductor structure: unidirectional Version: ESD Leakage current: 1nA Peak pulse power dissipation: 0.15W Max. forward impulse current: 1A Max. off-state voltage: 3.3V Breakdown voltage: 4.8V |
на замовлення 5551 шт: термін постачання 21-30 дні (днів) |
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SBC857BDW1T1G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP x2; bipolar; 45V; 0.1A; 0.38W; SC70-6,SC88,SOT363 Type of transistor: PNP x2 Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.38W Case: SC70-6; SC88; SOT363 Current gain: 220...475 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Application: automotive industry |
на замовлення 598 шт: термін постачання 21-30 дні (днів) |
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| NCP451AFCT2G | ONSEMI |
Category: Power switches - integrated circuitsDescription: IC: power switch; high-side; 3A; Ch: 1; N-Channel; SMD; WLCSP6 Type of integrated circuit: power switch Case: WLCSP6 Mounting: SMD Supply voltage: 0.75...5.5V DC Kind of package: reel; tape Output current: 3A Control voltage: 0...5.5V DC Kind of integrated circuit: high-side Active logical level: high Kind of output: N-Channel On-state resistance: 35mΩ Number of channels: 1 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NCP451FCT2G | ONSEMI |
Category: Power switches - integrated circuitsDescription: IC: power switch; high-side; 3A; Ch: 1; N-Channel; SMD; WLCSP6 Type of integrated circuit: power switch Case: WLCSP6 Mounting: SMD Supply voltage: 0.75...5.5V DC Kind of package: reel; tape Output current: 3A Control voltage: 0...5.5V DC Kind of integrated circuit: high-side Active logical level: high Kind of output: N-Channel On-state resistance: 35mΩ Number of channels: 1 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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1N4148WT | ONSEMI |
Category: SMD universal diodesDescription: Diode: switching; SMD; 75V; 0.1A; 4ns; SOD523F; Ufmax: 1V; Ifsm: 1A Type of diode: switching Mounting: SMD Max. off-state voltage: 75V Load current: 0.1A Semiconductor structure: single diode Features of semiconductor devices: small signal Kind of package: reel; tape Max. forward impulse current: 1A Case: SOD523F Max. forward voltage: 1V Reverse recovery time: 4ns Max. load current: 0.2A Capacitance: 4pF |
на замовлення 9494 шт: термін постачання 21-30 дні (днів) |
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BAT54XV2T1G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape Type of diode: Schottky switching Case: SOD523 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Max. forward voltage: 0.8V Max. load current: 0.3A Kind of package: reel; tape |
на замовлення 7261 шт: термін постачання 21-30 дні (днів) |
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MMSZ5239BT1G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 0.5W; 9.1V; SMD; reel,tape; SOD123; single diode Kind of package: reel; tape Case: SOD123 Mounting: SMD Semiconductor structure: single diode Type of diode: Zener Power dissipation: 0.5W Tolerance: ±5% Zener voltage: 9.1V Manufacturer series: MMSZ52xxB |
на замовлення 927 шт: термін постачання 21-30 дні (днів) |
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| FDMS86182 | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 49A; Idm: 364A; 83W; Power56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 49A Pulsed drain current: 364A Power dissipation: 83W Case: Power56 Gate-source voltage: ±20V On-state resistance: 19.5mΩ Mounting: SMD Gate charge: 37nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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FXMAR2102UMX | ONSEMI |
Category: Level translatorsDescription: IC: digital; Ch: 2; 1.65÷5.5VDC; SMD; MLP8; -40÷85°C; reel,tape; IN: 2 Type of integrated circuit: digital Kind of integrated circuit: 3-state; bidirectional; logic level voltage translator Number of channels: 2 Case: MLP8 Kind of package: reel; tape Mounting: SMD Operating temperature: -40...85°C Supply voltage: 1.65...5.5V DC Number of outputs: 2 Number of inputs: 2 Frequency: 50MHz Kind of output: open drain Integrated circuit features: 5V tolerant on inputs/outputs; auto-direction sensing |
на замовлення 4681 шт: термін постачання 21-30 дні (днів) |
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BC639 | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 100V; 1A; 800mW; TO92 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 1A Case: TO92 Mounting: THT Frequency: 100MHz Power: 0.8W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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J310 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-JFET; unipolar; 25V; 60mA; 350mW; TO92 Type of transistor: N-JFET Polarisation: unipolar Drain-source voltage: 25V Drain current: 60mA Case: TO92 Mounting: THT Power: 0.35W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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SS8550 | ONSEMI |
Category: PNP THT transistorsDescription: Transistor: PNP; bipolar; 40V; 1.5A; 1W; TO92 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 1.5A Power dissipation: 1W Case: TO92 Mounting: THT Kind of package: bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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TIP41C-TU | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 100V; 6A; 65W; TO220AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 6A Power dissipation: 65W Case: TO220AB Mounting: THT Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MJE15030 | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 150V; 8A; 50W; TO220AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 150V Collector current: 8A Power dissipation: 50W Case: TO220AB Mounting: THT Kind of package: tube Frequency: 30MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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2N5401G | ONSEMI |
Category: PNP THT transistorsDescription: Transistor: PNP; bipolar; 160V; 0.6A; 0.625W; TO92 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 160V Collector current: 0.6A Power dissipation: 0.625W Case: TO92 Mounting: THT Frequency: 100MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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SS8050C | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 40V; 1.5A; 1W; TO92 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 1.5A Power dissipation: 1W Case: TO92 Mounting: THT Kind of package: bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
|
BC550CG | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 50V; 100mA; 500mW; TO92 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.1A Case: TO92 Mounting: THT Frequency: 300MHz Power: 0.5W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
|
LF353N | ONSEMI |
Category: THT operational amplifiersDescription: IC: operational amplifier; 4MHz; Ch: 2; DIP8 Type of integrated circuit: operational amplifier Bandwidth: 4MHz Mounting: THT Number of channels: 2 Case: DIP8 Slew rate: 16V/μs Operating temperature: 0...70°C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| SS25 | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMB; SMD; 50V; 2A; reel,tape; 1.3W Type of diode: Schottky rectifying Case: SMB Mounting: SMD Max. off-state voltage: 50V Load current: 2A Semiconductor structure: single diode Max. forward voltage: 0.7V Max. forward impulse current: 50A Kind of package: reel; tape Power dissipation: 1.3W |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| SS25FA | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SOD123F; SMD; 50V; 2A; reel,tape Type of diode: Schottky rectifying Case: SOD123F Mounting: SMD Max. off-state voltage: 50V Load current: 2A Semiconductor structure: single diode Max. forward voltage: 0.7V Max. forward impulse current: 50A Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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MC74ACT74DR2G | ONSEMI |
Category: Flip-FlopsDescription: IC: digital; D flip-flop; Ch: 2; ACT; SMD; SO14 Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 2 Manufacturer series: ACT Mounting: SMD Case: SO14 Operating temperature: -40...85°C Supply voltage: 4.5...5.5V DC Trigger: positive-edge-triggered |
на замовлення 1866 шт: термін постачання 21-30 дні (днів) |
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BC560CG | ONSEMI |
Category: PNP THT transistorsDescription: Transistor: PNP; bipolar; 50V; 100mA; 500mW; TO92 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.1A Case: TO92 Mounting: THT Frequency: 150MHz Power: 0.5W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
|
MPSA42G | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 300V; 0.5A; 0.625W; TO92 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 300V Collector current: 0.5A Power dissipation: 0.625W Case: TO92 Mounting: THT |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| LM358ADR2G | ONSEMI |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 1.1MHz; Ch: 2; SO8; ±1.5÷16VDC,3÷32VDC Input offset voltage: 5mV Voltage supply range: ± 1.5...16V DC; 3...32V DC Number of channels: 2 Bandwidth: 1.1MHz Case: SO8 Type of integrated circuit: operational amplifier Kind of package: reel; tape Mounting: SMT Operating temperature: 0...70°C Input offset current: 75nA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
|
MOC3021M | ONSEMI |
Category: OptotriacsDescription: Optotriac; 5.3kV; Uout: 400V; DIP6; MOC302XM Type of optocoupler: optotriac Insulation voltage: 5.3kV Kind of output: without zero voltage crossing driver Case: DIP6 Trigger current: 15mA Mounting: THT Output voltage: 400V Manufacturer series: MOC302XM |
на замовлення 1139 шт: термін постачання 21-30 дні (днів) |
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| KSD882YSTU | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 30V; 3A; 1W; TO126ISO Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 3A Power dissipation: 1W Case: TO126ISO Current gain: 160...320 Mounting: THT Kind of package: tube Frequency: 90MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
|
1N914TR | ONSEMI |
Category: THT universal diodesDescription: Diode: switching; THT; 100V; 0.3A; reel,tape; Ifsm: 4A; DO35; Ir: 50uA Type of diode: switching Mounting: THT Max. off-state voltage: 100V Load current: 0.3A Reverse recovery time: 4ns Semiconductor structure: single diode Case: DO35 Max. forward voltage: 1V Max. forward impulse current: 4A Kind of package: reel; tape Leakage current: 50µA Capacitance: 4pF |
на замовлення 782 шт: термін постачання 21-30 дні (днів) |
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MC74VHC1G01DFT1G | ONSEMI |
Category: Gates, invertersDescription: IC: digital; NAND; Ch: 1; IN: 2; CMOS; SMD; SC88A; 2÷5.5VDC; -55÷125°C Type of integrated circuit: digital Number of channels: single; 1 Case: SC88A Supply voltage: 2...5.5V DC Mounting: SMD Kind of package: reel; tape Operating temperature: -55...125°C Kind of output: open drain Technology: CMOS Number of inputs: 2 Kind of gate: NAND Family: VHC Quiescent current: 40µA |
на замовлення 1177 шт: термін постачання 21-30 дні (днів) |
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| KST10MTF |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 25V; 350mW; SOT23
Mounting: SMD
Case: SOT23
Type of transistor: NPN
Kind of transistor: RF
Power dissipation: 0.35W
Collector-emitter voltage: 25V
Current gain: 60
Frequency: 650MHz
Kind of package: reel; tape
Polarisation: bipolar
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 25V; 350mW; SOT23
Mounting: SMD
Case: SOT23
Type of transistor: NPN
Kind of transistor: RF
Power dissipation: 0.35W
Collector-emitter voltage: 25V
Current gain: 60
Frequency: 650MHz
Kind of package: reel; tape
Polarisation: bipolar
на замовлення 1123 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 30+ | 14.53 грн |
| 62+ | 6.43 грн |
| 100+ | 4.14 грн |
| 424+ | 2.20 грн |
| MC74VHC244DTG |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,bus buffer,octal; Ch: 8; CMOS; SMD; TSSOP20
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; bus buffer; octal
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: TSSOP20
Operating temperature: -55...125°C
Kind of output: 3-state
Supply voltage: 2...5.5V DC
Kind of package: tube
Family: VHC
Manufacturer series: VHC
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,bus buffer,octal; Ch: 8; CMOS; SMD; TSSOP20
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; bus buffer; octal
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: TSSOP20
Operating temperature: -55...125°C
Kind of output: 3-state
Supply voltage: 2...5.5V DC
Kind of package: tube
Family: VHC
Manufacturer series: VHC
товару немає в наявності
В кошику
од. на суму грн.
| MC74VHC244DTR2G |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,bus buffer,octal; Ch: 8; CMOS; SMD; TSSOP20
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; bus buffer; octal
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: TSSOP20
Operating temperature: -55...125°C
Kind of output: 3-state
Supply voltage: 2...5.5V DC
Kind of package: reel; tape
Family: VHC
Manufacturer series: VHC
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,bus buffer,octal; Ch: 8; CMOS; SMD; TSSOP20
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; bus buffer; octal
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: TSSOP20
Operating temperature: -55...125°C
Kind of output: 3-state
Supply voltage: 2...5.5V DC
Kind of package: reel; tape
Family: VHC
Manufacturer series: VHC
товару немає в наявності
В кошику
од. на суму грн.
| MC74VHC244DWR2G |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,bus buffer,octal; Ch: 8; CMOS; SMD; SO20WB; VHC
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; bus buffer; octal
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: SO20WB
Operating temperature: -55...125°C
Kind of output: 3-state
Supply voltage: 2...5.5V DC
Kind of package: reel; tape
Family: VHC
Manufacturer series: VHC
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,bus buffer,octal; Ch: 8; CMOS; SMD; SO20WB; VHC
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; bus buffer; octal
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: SO20WB
Operating temperature: -55...125°C
Kind of output: 3-state
Supply voltage: 2...5.5V DC
Kind of package: reel; tape
Family: VHC
Manufacturer series: VHC
товару немає в наявності
В кошику
од. на суму грн.
| BZX84C4V7LT1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 4.7V; SMD; reel,tape; SOT23; single diode; 3uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84C
Leakage current: 3µA
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 4.7V; SMD; reel,tape; SOT23; single diode; 3uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84C
Leakage current: 3µA
на замовлення 13489 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 72+ | 5.98 грн |
| 87+ | 4.60 грн |
| 103+ | 3.89 грн |
| 158+ | 2.52 грн |
| 191+ | 2.09 грн |
| 500+ | 1.39 грн |
| 1000+ | 1.19 грн |
| 3000+ | 0.97 грн |
| 6000+ | 0.86 грн |
| KSC2073TU |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 150V; 1.5A; 25W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 1.5A
Power dissipation: 25W
Case: TO220AB
Current gain: 40...140
Mounting: THT
Kind of package: tube
Frequency: 4MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 150V; 1.5A; 25W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 1.5A
Power dissipation: 25W
Case: TO220AB
Current gain: 40...140
Mounting: THT
Kind of package: tube
Frequency: 4MHz
товару немає в наявності
В кошику
од. на суму грн.
| NSS12100XV6T1G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 12V; 1A; 0.65W; SOT563
Case: SOT563
Mounting: SMD
Kind of package: reel; tape
Type of transistor: PNP
Power dissipation: 0.65W
Collector current: 1A
Collector-emitter voltage: 12V
Current gain: 100
Application: automotive industry
Polarisation: bipolar
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 12V; 1A; 0.65W; SOT563
Case: SOT563
Mounting: SMD
Kind of package: reel; tape
Type of transistor: PNP
Power dissipation: 0.65W
Collector current: 1A
Collector-emitter voltage: 12V
Current gain: 100
Application: automotive industry
Polarisation: bipolar
на замовлення 8 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 52.99 грн |
| BSR16 |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.8A; 0.35W; SOT23,TO236AB
Case: SOT23; TO236AB
Polarisation: bipolar
Mounting: SMD
Type of transistor: PNP
Collector current: 0.8A
Power dissipation: 0.35W
Collector-emitter voltage: 60V
Frequency: 300MHz
Kind of package: reel; tape
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.8A; 0.35W; SOT23,TO236AB
Case: SOT23; TO236AB
Polarisation: bipolar
Mounting: SMD
Type of transistor: PNP
Collector current: 0.8A
Power dissipation: 0.35W
Collector-emitter voltage: 60V
Frequency: 300MHz
Kind of package: reel; tape
на замовлення 2091 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 15+ | 29.91 грн |
| 20+ | 20.08 грн |
| 50+ | 13.73 грн |
| 100+ | 11.59 грн |
| 500+ | 8.09 грн |
| 1000+ | 7.06 грн |
| 1500+ | 6.59 грн |
| MC14081BDG |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Mounting: SMD
Case: SO14
Operating temperature: -55...125°C
Delay time: 130ns
Number of inputs: 2
Supply voltage: 3...18V DC
Type of integrated circuit: digital
Kind of gate: AND
Kind of package: tube
Technology: CMOS
Number of channels: quad; 4
Family: HEF4000B
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Mounting: SMD
Case: SO14
Operating temperature: -55...125°C
Delay time: 130ns
Number of inputs: 2
Supply voltage: 3...18V DC
Type of integrated circuit: digital
Kind of gate: AND
Kind of package: tube
Technology: CMOS
Number of channels: quad; 4
Family: HEF4000B
на замовлення 218 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 48.72 грн |
| 14+ | 30.00 грн |
| 25+ | 26.67 грн |
| 42+ | 22.70 грн |
| 110+ | 21.74 грн |
| 113+ | 21.43 грн |
| MC14081BDTR2G |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 3÷18VDC; -55÷125°C
Mounting: SMD
Case: TSSOP14
Operating temperature: -55...125°C
Delay time: 130ns
Number of inputs: 2
Supply voltage: 3...18V DC
Type of integrated circuit: digital
Kind of gate: AND
Kind of package: reel; tape
Technology: CMOS
Number of channels: quad; 4
Family: HEF4000B
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 3÷18VDC; -55÷125°C
Mounting: SMD
Case: TSSOP14
Operating temperature: -55...125°C
Delay time: 130ns
Number of inputs: 2
Supply voltage: 3...18V DC
Type of integrated circuit: digital
Kind of gate: AND
Kind of package: reel; tape
Technology: CMOS
Number of channels: quad; 4
Family: HEF4000B
на замовлення 1900 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 65.81 грн |
| 11+ | 36.90 грн |
| 25+ | 30.16 грн |
| 49+ | 19.36 грн |
| 133+ | 18.33 грн |
| HCPL4503M |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; 5kV; CTR@If: 19-50%@16mA
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
Case: DIP8
Manufacturer series: HCPL4503M
CTR@If: 19-50%@16mA
Slew rate: 10kV/μs
Transfer rate: 1Mbps
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; 5kV; CTR@If: 19-50%@16mA
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
Case: DIP8
Manufacturer series: HCPL4503M
CTR@If: 19-50%@16mA
Slew rate: 10kV/μs
Transfer rate: 1Mbps
на замовлення 853 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 151.27 грн |
| 4+ | 117.45 грн |
| 10+ | 97.61 грн |
| 11+ | 90.47 грн |
| 29+ | 85.71 грн |
| 50+ | 83.33 грн |
| 100+ | 82.53 грн |
| MC14557BDWG |
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Виробник: ONSEMI
Category: Shift registers
Description: IC: digital; shift register; Ch: 1; CMOS; SMD; SO16WB; HEF4000B; tube
Type of integrated circuit: digital
Kind of integrated circuit: shift register
Supply voltage: 3...18V DC
Case: SO16WB
Mounting: SMD
Operating temperature: -55...125°C
Kind of package: tube
Family: HEF4000B
Number of channels: 1
Number of inputs: 12
Technology: CMOS
Category: Shift registers
Description: IC: digital; shift register; Ch: 1; CMOS; SMD; SO16WB; HEF4000B; tube
Type of integrated circuit: digital
Kind of integrated circuit: shift register
Supply voltage: 3...18V DC
Case: SO16WB
Mounting: SMD
Operating temperature: -55...125°C
Kind of package: tube
Family: HEF4000B
Number of channels: 1
Number of inputs: 12
Technology: CMOS
товару немає в наявності
В кошику
од. на суму грн.
| FDMS86101 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; 104W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Power dissipation: 104W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 55nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; 104W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Power dissipation: 104W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 55nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
товару немає в наявності
В кошику
од. на суму грн.
| FCMT299N60 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.9A; Idm: 36A; 125W; Power88
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.9A
Power dissipation: 125W
Case: Power88
Gate-source voltage: ±20V
On-state resistance: 0.299Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 36A
Gate charge: 51nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.9A; Idm: 36A; 125W; Power88
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.9A
Power dissipation: 125W
Case: Power88
Gate-source voltage: ±20V
On-state resistance: 0.299Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 36A
Gate charge: 51nC
товару немає в наявності
В кошику
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| SBCP56-10T1G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 1.5W; SOT223-4,TO261-4
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 63...160
Mounting: SMD
Kind of package: reel; tape
Frequency: 130MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 1.5W; SOT223-4,TO261-4
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 63...160
Mounting: SMD
Kind of package: reel; tape
Frequency: 130MHz
Application: automotive industry
на замовлення 181 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 34.19 грн |
| 26+ | 15.32 грн |
| 100+ | 12.30 грн |
| SBAS16HT1G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOD323; Ufmax: 1.75V; 200mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOD323
Max. forward voltage: 1.75V
Max. forward impulse current: 36A
Power dissipation: 0.2W
Kind of package: reel; tape
Application: automotive industry
Max. load current: 1A
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOD323; Ufmax: 1.75V; 200mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOD323
Max. forward voltage: 1.75V
Max. forward impulse current: 36A
Power dissipation: 0.2W
Kind of package: reel; tape
Application: automotive industry
Max. load current: 1A
на замовлення 830 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 55+ | 7.90 грн |
| 109+ | 3.65 грн |
| 120+ | 3.31 грн |
| 762+ | 3.18 грн |
| MC74ACT125DTR2G |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; SMD; TSSOP14; ACT; 2÷6VDC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
Mounting: SMD
Case: TSSOP14
Manufacturer series: ACT
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 2...6V DC
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; SMD; TSSOP14; ACT; 2÷6VDC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
Mounting: SMD
Case: TSSOP14
Manufacturer series: ACT
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 2...6V DC
на замовлення 2265 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 40.17 грн |
| 17+ | 24.05 грн |
| 25+ | 21.35 грн |
| 100+ | 18.57 грн |
| 500+ | 17.62 грн |
| FAN3111ESX |
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Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; SOT23-5
Case: SOT23-5
Technology: MillerDrive™
Kind of package: reel; tape
Operating temperature: -40...125°C
Output current: -0.9...1.1A
Impulse rise time: 18ns
Number of channels: 1
Supply voltage: 4.5...18V DC
Type of integrated circuit: driver
Pulse fall time: 17ns
Kind of integrated circuit: low-side; MOSFET gate driver
Mounting: SMD
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; SOT23-5
Case: SOT23-5
Technology: MillerDrive™
Kind of package: reel; tape
Operating temperature: -40...125°C
Output current: -0.9...1.1A
Impulse rise time: 18ns
Number of channels: 1
Supply voltage: 4.5...18V DC
Type of integrated circuit: driver
Pulse fall time: 17ns
Kind of integrated circuit: low-side; MOSFET gate driver
Mounting: SMD
на замовлення 1061 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 82.90 грн |
| 10+ | 49.68 грн |
| 25+ | 40.39 грн |
| 100+ | 30.24 грн |
| 200+ | 29.76 грн |
| NCP361SNT1G |
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Виробник: ONSEMI
Category: Drivers - integrated circuits
Description: IC: driver; TSOP5; Ch: 1; Uin: 1.2÷20V; OUT: transistor
Type of integrated circuit: driver
Case: TSOP5
Mounting: SMD
Operating temperature: -40...85°C
Application: USB
Number of channels: 1
Input voltage: 1.2...20V
Threshold on-voltage: 3V
Kind of output: transistor
Category: Drivers - integrated circuits
Description: IC: driver; TSOP5; Ch: 1; Uin: 1.2÷20V; OUT: transistor
Type of integrated circuit: driver
Case: TSOP5
Mounting: SMD
Operating temperature: -40...85°C
Application: USB
Number of channels: 1
Input voltage: 1.2...20V
Threshold on-voltage: 3V
Kind of output: transistor
на замовлення 1893 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 49.57 грн |
| 12+ | 34.76 грн |
| 14+ | 28.81 грн |
| 25+ | 23.81 грн |
| FIN1002M5X |
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Виробник: ONSEMI
Category: Interfaces others - integrated circuits
Description: IC: digital; line receiver,differential,translator; LVDS; SMD
Technology: LVDS
Type of integrated circuit: digital
Kind of package: tube
Mounting: SMD
Operating temperature: -40...125°C
Number of channels: 1
Supply voltage: 3...3.6V DC
Kind of integrated circuit: differential; line receiver; translator
Case: SOT23-5
Category: Interfaces others - integrated circuits
Description: IC: digital; line receiver,differential,translator; LVDS; SMD
Technology: LVDS
Type of integrated circuit: digital
Kind of package: tube
Mounting: SMD
Operating temperature: -40...125°C
Number of channels: 1
Supply voltage: 3...3.6V DC
Kind of integrated circuit: differential; line receiver; translator
Case: SOT23-5
на замовлення 1645 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 73.50 грн |
| 10+ | 45.87 грн |
| 25+ | 37.62 грн |
| 100+ | 28.65 грн |
| 2SB815-7-TB-E |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 15V; 0.7A; 0.2W; SC59
Case: SC59
Kind of package: reel; tape
Frequency: 250MHz
Type of transistor: PNP
Mounting: SMD
Power dissipation: 0.2W
Collector current: 0.7A
Collector-emitter voltage: 15V
Current gain: 300...600
Polarisation: bipolar
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 15V; 0.7A; 0.2W; SC59
Case: SC59
Kind of package: reel; tape
Frequency: 250MHz
Type of transistor: PNP
Mounting: SMD
Power dissipation: 0.2W
Collector current: 0.7A
Collector-emitter voltage: 15V
Current gain: 300...600
Polarisation: bipolar
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| NCP81080DR2G |
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Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-side,gate driver; SO8
Mounting: SMD
Case: SO8
Operating temperature: -40...140°C
Output current: -800...500mA
Impulse rise time: 19ns
Supply voltage: 5.5...20V DC
Pulse fall time: 17ns
Kind of integrated circuit: gate driver; high-side
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-side,gate driver; SO8
Mounting: SMD
Case: SO8
Operating temperature: -40...140°C
Output current: -800...500mA
Impulse rise time: 19ns
Supply voltage: 5.5...20V DC
Pulse fall time: 17ns
Kind of integrated circuit: gate driver; high-side
Type of integrated circuit: driver
Topology: MOSFET half-bridge
на замовлення 767 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 79.48 грн |
| 7+ | 65.87 грн |
| 25+ | 58.73 грн |
| 100+ | 53.97 грн |
| SS12 |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 20V; 1A; reel,tape; 1.1W
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 40A
Kind of package: reel; tape
Power dissipation: 1.1W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 20V; 1A; reel,tape; 1.1W
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 40A
Kind of package: reel; tape
Power dissipation: 1.1W
на замовлення 6350 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 24+ | 17.95 грн |
| 38+ | 10.63 грн |
| 39+ | 10.40 грн |
| BSS123 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; 0.36W; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N-MOSFET
Gate charge: 2.5nC
Drain current: 0.17A
Power dissipation: 0.36W
On-state resistance: 12Ω
Gate-source voltage: ±20V
Drain-source voltage: 100V
Polarisation: unipolar
Kind of channel: enhancement
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; 0.36W; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N-MOSFET
Gate charge: 2.5nC
Drain current: 0.17A
Power dissipation: 0.36W
On-state resistance: 12Ω
Gate-source voltage: ±20V
Drain-source voltage: 100V
Polarisation: unipolar
Kind of channel: enhancement
Features of semiconductor devices: logic level
на замовлення 16303 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 30+ | 14.53 грн |
| 43+ | 9.29 грн |
| 64+ | 6.29 грн |
| 100+ | 5.30 грн |
| 500+ | 3.71 грн |
| 1000+ | 3.26 грн |
| 1500+ | 3.05 грн |
| 3000+ | 2.74 грн |
| 6000+ | 2.49 грн |
| BSS123W |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; Idm: 0.68A; 0.2W
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N-MOSFET
Drain current: 0.17A
Power dissipation: 0.2W
Pulsed drain current: 0.68A
On-state resistance: 10Ω
Gate-source voltage: ±20V
Drain-source voltage: 100V
Polarisation: unipolar
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; Idm: 0.68A; 0.2W
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N-MOSFET
Drain current: 0.17A
Power dissipation: 0.2W
Pulsed drain current: 0.68A
On-state resistance: 10Ω
Gate-source voltage: ±20V
Drain-source voltage: 100V
Polarisation: unipolar
Kind of channel: enhancement
на замовлення 1290 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 40+ | 11.11 грн |
| 60+ | 6.98 грн |
| 100+ | 6.11 грн |
| 500+ | 5.56 грн |
| 1N5408G |
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Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 3A; bulk; Ifsm: 200A; DO27; Ufmax: 1V
Mounting: THT
Leakage current: 50µA
Max. forward voltage: 1V
Load current: 3A
Max. forward impulse current: 200A
Max. off-state voltage: 1kV
Kind of package: bulk
Case: DO27
Type of diode: rectifying
Semiconductor structure: single diode
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 3A; bulk; Ifsm: 200A; DO27; Ufmax: 1V
Mounting: THT
Leakage current: 50µA
Max. forward voltage: 1V
Load current: 3A
Max. forward impulse current: 200A
Max. off-state voltage: 1kV
Kind of package: bulk
Case: DO27
Type of diode: rectifying
Semiconductor structure: single diode
на замовлення 1101 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 21.37 грн |
| 25+ | 16.03 грн |
| 28+ | 14.44 грн |
| 100+ | 10.16 грн |
| 250+ | 8.73 грн |
| 500+ | 8.25 грн |
| MOC3022M |
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Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 5.3kV; Uout: 400V; DIP6; MOC302XM
Type of optocoupler: optotriac
Insulation voltage: 5.3kV
Kind of output: without zero voltage crossing driver
Case: DIP6
Trigger current: 10mA
Mounting: THT
Output voltage: 400V
Manufacturer series: MOC302XM
Category: Optotriacs
Description: Optotriac; 5.3kV; Uout: 400V; DIP6; MOC302XM
Type of optocoupler: optotriac
Insulation voltage: 5.3kV
Kind of output: without zero voltage crossing driver
Case: DIP6
Trigger current: 10mA
Mounting: THT
Output voltage: 400V
Manufacturer series: MOC302XM
на замовлення 527 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 37.60 грн |
| 13+ | 30.87 грн |
| 50+ | 25.95 грн |
| 100+ | 23.81 грн |
| 500+ | 22.94 грн |
| MC74VHC1G08DTT1G |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS; SMD; TSOP5; 2÷5.5VDC; -55÷125°C
Type of integrated circuit: digital
Number of channels: single; 1
Case: TSOP5
Supply voltage: 2...5.5V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -55...125°C
Technology: CMOS
Number of inputs: 2
Kind of gate: AND
Family: VHC
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS; SMD; TSOP5; 2÷5.5VDC; -55÷125°C
Type of integrated circuit: digital
Number of channels: single; 1
Case: TSOP5
Supply voltage: 2...5.5V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -55...125°C
Technology: CMOS
Number of inputs: 2
Kind of gate: AND
Family: VHC
на замовлення 3145 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 40+ | 11.62 грн |
| 50+ | 9.44 грн |
| 250+ | 8.02 грн |
| 1000+ | 6.75 грн |
| SBAS16HT3G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOD323; Ufmax: 1.25V; Ir: 30uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOD323
Max. forward voltage: 1.25V
Max. forward impulse current: 36A
Leakage current: 30µA
Power dissipation: 0.2W
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOD323; Ufmax: 1.25V; Ir: 30uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOD323
Max. forward voltage: 1.25V
Max. forward impulse current: 36A
Leakage current: 30µA
Power dissipation: 0.2W
Kind of package: reel; tape
Application: automotive industry
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| 1N5407G |
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Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 3A; bulk; Ifsm: 200A; DO27; Ufmax: 1V
Case: DO27
Mounting: THT
Type of diode: rectifying
Semiconductor structure: single diode
Leakage current: 50µA
Max. forward voltage: 1V
Load current: 3A
Max. forward impulse current: 200A
Max. off-state voltage: 0.8kV
Kind of package: bulk
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 3A; bulk; Ifsm: 200A; DO27; Ufmax: 1V
Case: DO27
Mounting: THT
Type of diode: rectifying
Semiconductor structure: single diode
Leakage current: 50µA
Max. forward voltage: 1V
Load current: 3A
Max. forward impulse current: 200A
Max. off-state voltage: 0.8kV
Kind of package: bulk
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| NRVTSM260EV2T1G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; POWERMITE; SMD; 60V; 2A; reel,tape
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: SMD
Max. forward voltage: 0.65V
Load current: 2A
Max. load current: 4A
Max. forward impulse current: 50A
Max. off-state voltage: 60V
Case: POWERMITE
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; POWERMITE; SMD; 60V; 2A; reel,tape
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: SMD
Max. forward voltage: 0.65V
Load current: 2A
Max. load current: 4A
Max. forward impulse current: 50A
Max. off-state voltage: 60V
Case: POWERMITE
Application: automotive industry
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| NRVTSM260EV2T3G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; POWERMITE; SMD; 60V; 2A; reel,tape
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: SMD
Max. forward voltage: 0.65V
Load current: 2A
Max. load current: 4A
Max. forward impulse current: 50A
Max. off-state voltage: 60V
Case: POWERMITE
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; POWERMITE; SMD; 60V; 2A; reel,tape
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: SMD
Max. forward voltage: 0.65V
Load current: 2A
Max. load current: 4A
Max. forward impulse current: 50A
Max. off-state voltage: 60V
Case: POWERMITE
Application: automotive industry
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| ESD9R3.3ST5G |
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Виробник: ONSEMI
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.15W; 4.8V; 1A; unidirectional; SOD923; reel,tape; ESD
Type of diode: TVS
Kind of package: reel; tape
Case: SOD923
Mounting: SMD
Semiconductor structure: unidirectional
Version: ESD
Leakage current: 1nA
Peak pulse power dissipation: 0.15W
Max. forward impulse current: 1A
Max. off-state voltage: 3.3V
Breakdown voltage: 4.8V
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.15W; 4.8V; 1A; unidirectional; SOD923; reel,tape; ESD
Type of diode: TVS
Kind of package: reel; tape
Case: SOD923
Mounting: SMD
Semiconductor structure: unidirectional
Version: ESD
Leakage current: 1nA
Peak pulse power dissipation: 0.15W
Max. forward impulse current: 1A
Max. off-state voltage: 3.3V
Breakdown voltage: 4.8V
на замовлення 5551 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 35.04 грн |
| 18+ | 22.86 грн |
| 50+ | 18.57 грн |
| 58+ | 16.35 грн |
| 157+ | 15.48 грн |
| 500+ | 14.92 грн |
| SBC857BDW1T1G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 45V; 0.1A; 0.38W; SC70-6,SC88,SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.38W
Case: SC70-6; SC88; SOT363
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 45V; 0.1A; 0.38W; SC70-6,SC88,SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.38W
Case: SC70-6; SC88; SOT363
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
на замовлення 598 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 39+ | 11.11 грн |
| 66+ | 6.03 грн |
| 90+ | 4.41 грн |
| 103+ | 3.86 грн |
| 500+ | 2.84 грн |
| NCP451AFCT2G |
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Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3A; Ch: 1; N-Channel; SMD; WLCSP6
Type of integrated circuit: power switch
Case: WLCSP6
Mounting: SMD
Supply voltage: 0.75...5.5V DC
Kind of package: reel; tape
Output current: 3A
Control voltage: 0...5.5V DC
Kind of integrated circuit: high-side
Active logical level: high
Kind of output: N-Channel
On-state resistance: 35mΩ
Number of channels: 1
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3A; Ch: 1; N-Channel; SMD; WLCSP6
Type of integrated circuit: power switch
Case: WLCSP6
Mounting: SMD
Supply voltage: 0.75...5.5V DC
Kind of package: reel; tape
Output current: 3A
Control voltage: 0...5.5V DC
Kind of integrated circuit: high-side
Active logical level: high
Kind of output: N-Channel
On-state resistance: 35mΩ
Number of channels: 1
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| NCP451FCT2G |
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Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3A; Ch: 1; N-Channel; SMD; WLCSP6
Type of integrated circuit: power switch
Case: WLCSP6
Mounting: SMD
Supply voltage: 0.75...5.5V DC
Kind of package: reel; tape
Output current: 3A
Control voltage: 0...5.5V DC
Kind of integrated circuit: high-side
Active logical level: high
Kind of output: N-Channel
On-state resistance: 35mΩ
Number of channels: 1
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3A; Ch: 1; N-Channel; SMD; WLCSP6
Type of integrated circuit: power switch
Case: WLCSP6
Mounting: SMD
Supply voltage: 0.75...5.5V DC
Kind of package: reel; tape
Output current: 3A
Control voltage: 0...5.5V DC
Kind of integrated circuit: high-side
Active logical level: high
Kind of output: N-Channel
On-state resistance: 35mΩ
Number of channels: 1
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| 1N4148WT |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.1A; 4ns; SOD523F; Ufmax: 1V; Ifsm: 1A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.1A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Kind of package: reel; tape
Max. forward impulse current: 1A
Case: SOD523F
Max. forward voltage: 1V
Reverse recovery time: 4ns
Max. load current: 0.2A
Capacitance: 4pF
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.1A; 4ns; SOD523F; Ufmax: 1V; Ifsm: 1A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.1A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Kind of package: reel; tape
Max. forward impulse current: 1A
Case: SOD523F
Max. forward voltage: 1V
Reverse recovery time: 4ns
Max. load current: 0.2A
Capacitance: 4pF
на замовлення 9494 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 63+ | 6.84 грн |
| 93+ | 4.29 грн |
| 127+ | 3.14 грн |
| 250+ | 2.70 грн |
| 500+ | 2.36 грн |
| 1000+ | 2.02 грн |
| 2000+ | 1.69 грн |
| 2500+ | 1.58 грн |
| 8000+ | 1.39 грн |
| BAT54XV2T1G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Max. load current: 0.3A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Max. load current: 0.3A
Kind of package: reel; tape
на замовлення 7261 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 56+ | 7.69 грн |
| 81+ | 4.92 грн |
| 114+ | 3.51 грн |
| 131+ | 3.03 грн |
| 500+ | 2.21 грн |
| 1000+ | 1.94 грн |
| 3000+ | 1.67 грн |
| MMSZ5239BT1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 9.1V; SMD; reel,tape; SOD123; single diode
Kind of package: reel; tape
Case: SOD123
Mounting: SMD
Semiconductor structure: single diode
Type of diode: Zener
Power dissipation: 0.5W
Tolerance: ±5%
Zener voltage: 9.1V
Manufacturer series: MMSZ52xxB
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 9.1V; SMD; reel,tape; SOD123; single diode
Kind of package: reel; tape
Case: SOD123
Mounting: SMD
Semiconductor structure: single diode
Type of diode: Zener
Power dissipation: 0.5W
Tolerance: ±5%
Zener voltage: 9.1V
Manufacturer series: MMSZ52xxB
на замовлення 927 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 46+ | 9.40 грн |
| 71+ | 5.63 грн |
| 114+ | 3.50 грн |
| 500+ | 2.54 грн |
| 610+ | 1.53 грн |
| FDMS86182 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 49A; Idm: 364A; 83W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 49A
Pulsed drain current: 364A
Power dissipation: 83W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 19.5mΩ
Mounting: SMD
Gate charge: 37nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 49A; Idm: 364A; 83W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 49A
Pulsed drain current: 364A
Power dissipation: 83W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 19.5mΩ
Mounting: SMD
Gate charge: 37nC
Kind of package: reel; tape
Kind of channel: enhancement
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| FXMAR2102UMX |
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Виробник: ONSEMI
Category: Level translators
Description: IC: digital; Ch: 2; 1.65÷5.5VDC; SMD; MLP8; -40÷85°C; reel,tape; IN: 2
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; bidirectional; logic level voltage translator
Number of channels: 2
Case: MLP8
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 1.65...5.5V DC
Number of outputs: 2
Number of inputs: 2
Frequency: 50MHz
Kind of output: open drain
Integrated circuit features: 5V tolerant on inputs/outputs; auto-direction sensing
Category: Level translators
Description: IC: digital; Ch: 2; 1.65÷5.5VDC; SMD; MLP8; -40÷85°C; reel,tape; IN: 2
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; bidirectional; logic level voltage translator
Number of channels: 2
Case: MLP8
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 1.65...5.5V DC
Number of outputs: 2
Number of inputs: 2
Frequency: 50MHz
Kind of output: open drain
Integrated circuit features: 5V tolerant on inputs/outputs; auto-direction sensing
на замовлення 4681 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 63.24 грн |
| 10+ | 54.76 грн |
| 19+ | 51.58 грн |
| 50+ | 48.41 грн |
| 100+ | 46.82 грн |
| BC639 |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 1A; 800mW; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 1A
Case: TO92
Mounting: THT
Frequency: 100MHz
Power: 0.8W
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 1A; 800mW; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 1A
Case: TO92
Mounting: THT
Frequency: 100MHz
Power: 0.8W
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| J310 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-JFET; unipolar; 25V; 60mA; 350mW; TO92
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 60mA
Case: TO92
Mounting: THT
Power: 0.35W
Category: THT N channel transistors
Description: Transistor: N-JFET; unipolar; 25V; 60mA; 350mW; TO92
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 60mA
Case: TO92
Mounting: THT
Power: 0.35W
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| SS8550 |
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Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 40V; 1.5A; 1W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 1.5A
Power dissipation: 1W
Case: TO92
Mounting: THT
Kind of package: bulk
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 40V; 1.5A; 1W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 1.5A
Power dissipation: 1W
Case: TO92
Mounting: THT
Kind of package: bulk
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| TIP41C-TU |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 6A; 65W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 6A
Power dissipation: 65W
Case: TO220AB
Mounting: THT
Kind of package: tube
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 6A; 65W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 6A
Power dissipation: 65W
Case: TO220AB
Mounting: THT
Kind of package: tube
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| MJE15030 |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 150V; 8A; 50W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 8A
Power dissipation: 50W
Case: TO220AB
Mounting: THT
Kind of package: tube
Frequency: 30MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 150V; 8A; 50W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 8A
Power dissipation: 50W
Case: TO220AB
Mounting: THT
Kind of package: tube
Frequency: 30MHz
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| 2N5401G |
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Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 160V; 0.6A; 0.625W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 0.6A
Power dissipation: 0.625W
Case: TO92
Mounting: THT
Frequency: 100MHz
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 160V; 0.6A; 0.625W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 0.6A
Power dissipation: 0.625W
Case: TO92
Mounting: THT
Frequency: 100MHz
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| SS8050C |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 40V; 1.5A; 1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 1.5A
Power dissipation: 1W
Case: TO92
Mounting: THT
Kind of package: bulk
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 40V; 1.5A; 1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 1.5A
Power dissipation: 1W
Case: TO92
Mounting: THT
Kind of package: bulk
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| BC550CG |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 50V; 100mA; 500mW; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: TO92
Mounting: THT
Frequency: 300MHz
Power: 0.5W
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 50V; 100mA; 500mW; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: TO92
Mounting: THT
Frequency: 300MHz
Power: 0.5W
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| LF353N |
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Виробник: ONSEMI
Category: THT operational amplifiers
Description: IC: operational amplifier; 4MHz; Ch: 2; DIP8
Type of integrated circuit: operational amplifier
Bandwidth: 4MHz
Mounting: THT
Number of channels: 2
Case: DIP8
Slew rate: 16V/μs
Operating temperature: 0...70°C
Category: THT operational amplifiers
Description: IC: operational amplifier; 4MHz; Ch: 2; DIP8
Type of integrated circuit: operational amplifier
Bandwidth: 4MHz
Mounting: THT
Number of channels: 2
Case: DIP8
Slew rate: 16V/μs
Operating temperature: 0...70°C
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| SS25 |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 50V; 2A; reel,tape; 1.3W
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 50V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.7V
Max. forward impulse current: 50A
Kind of package: reel; tape
Power dissipation: 1.3W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 50V; 2A; reel,tape; 1.3W
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 50V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.7V
Max. forward impulse current: 50A
Kind of package: reel; tape
Power dissipation: 1.3W
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| SS25FA |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 50V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 50V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.7V
Max. forward impulse current: 50A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 50V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 50V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.7V
Max. forward impulse current: 50A
Kind of package: reel; tape
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| MC74ACT74DR2G |
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Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; ACT; SMD; SO14
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Manufacturer series: ACT
Mounting: SMD
Case: SO14
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Trigger: positive-edge-triggered
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; ACT; SMD; SO14
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Manufacturer series: ACT
Mounting: SMD
Case: SO14
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Trigger: positive-edge-triggered
на замовлення 1866 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 18+ | 23.93 грн |
| 23+ | 17.94 грн |
| 25+ | 15.95 грн |
| 29+ | 13.73 грн |
| 50+ | 12.38 грн |
| 100+ | 12.22 грн |
| BC560CG | ![]() |
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Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 50V; 100mA; 500mW; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: TO92
Mounting: THT
Frequency: 150MHz
Power: 0.5W
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 50V; 100mA; 500mW; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: TO92
Mounting: THT
Frequency: 150MHz
Power: 0.5W
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| MPSA42G | ![]() |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 0.625W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.625W
Case: TO92
Mounting: THT
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 0.625W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.625W
Case: TO92
Mounting: THT
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| LM358ADR2G |
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Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.1MHz; Ch: 2; SO8; ±1.5÷16VDC,3÷32VDC
Input offset voltage: 5mV
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Number of channels: 2
Bandwidth: 1.1MHz
Case: SO8
Type of integrated circuit: operational amplifier
Kind of package: reel; tape
Mounting: SMT
Operating temperature: 0...70°C
Input offset current: 75nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.1MHz; Ch: 2; SO8; ±1.5÷16VDC,3÷32VDC
Input offset voltage: 5mV
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Number of channels: 2
Bandwidth: 1.1MHz
Case: SO8
Type of integrated circuit: operational amplifier
Kind of package: reel; tape
Mounting: SMT
Operating temperature: 0...70°C
Input offset current: 75nA
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| MOC3021M |
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Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 5.3kV; Uout: 400V; DIP6; MOC302XM
Type of optocoupler: optotriac
Insulation voltage: 5.3kV
Kind of output: without zero voltage crossing driver
Case: DIP6
Trigger current: 15mA
Mounting: THT
Output voltage: 400V
Manufacturer series: MOC302XM
Category: Optotriacs
Description: Optotriac; 5.3kV; Uout: 400V; DIP6; MOC302XM
Type of optocoupler: optotriac
Insulation voltage: 5.3kV
Kind of output: without zero voltage crossing driver
Case: DIP6
Trigger current: 15mA
Mounting: THT
Output voltage: 400V
Manufacturer series: MOC302XM
на замовлення 1139 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 47.86 грн |
| 14+ | 29.36 грн |
| 16+ | 25.24 грн |
| 50+ | 21.35 грн |
| KSD882YSTU |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 30V; 3A; 1W; TO126ISO
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 3A
Power dissipation: 1W
Case: TO126ISO
Current gain: 160...320
Mounting: THT
Kind of package: tube
Frequency: 90MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 30V; 3A; 1W; TO126ISO
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 3A
Power dissipation: 1W
Case: TO126ISO
Current gain: 160...320
Mounting: THT
Kind of package: tube
Frequency: 90MHz
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| 1N914TR |
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Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.3A; reel,tape; Ifsm: 4A; DO35; Ir: 50uA
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: DO35
Max. forward voltage: 1V
Max. forward impulse current: 4A
Kind of package: reel; tape
Leakage current: 50µA
Capacitance: 4pF
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.3A; reel,tape; Ifsm: 4A; DO35; Ir: 50uA
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: DO35
Max. forward voltage: 1V
Max. forward impulse current: 4A
Kind of package: reel; tape
Leakage current: 50µA
Capacitance: 4pF
на замовлення 782 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 63+ | 6.84 грн |
| 167+ | 2.38 грн |
| 229+ | 1.74 грн |
| 500+ | 1.36 грн |
| MC74VHC1G01DFT1G |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS; SMD; SC88A; 2÷5.5VDC; -55÷125°C
Type of integrated circuit: digital
Number of channels: single; 1
Case: SC88A
Supply voltage: 2...5.5V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -55...125°C
Kind of output: open drain
Technology: CMOS
Number of inputs: 2
Kind of gate: NAND
Family: VHC
Quiescent current: 40µA
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS; SMD; SC88A; 2÷5.5VDC; -55÷125°C
Type of integrated circuit: digital
Number of channels: single; 1
Case: SC88A
Supply voltage: 2...5.5V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -55...125°C
Kind of output: open drain
Technology: CMOS
Number of inputs: 2
Kind of gate: NAND
Family: VHC
Quiescent current: 40µA
на замовлення 1177 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 79+ | 5.47 грн |
| 91+ | 4.38 грн |
| 114+ | 3.50 грн |
| 500+ | 2.97 грн |






































