| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||||
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MMSZ5237BT1G | ONSEMI |
 Category: SMD Zener diodesDescription: Diode: Zener; 0.5W; 8.2V; SMD; SOD123; single diode; reel,tape Type of diode: Zener Power dissipation: 0.5W Zener voltage: 8.2V Case: SOD123 Mounting: SMD Tolerance: ±5% Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: MMSZ52xxB |
на замовлення 26220 шт: термін постачання 14-30 дні (днів) |
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| SZMMSZ5237BT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 8.2V; SMD; SOD123; reel,tape; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 8.2V Mounting: SMD Tolerance: ±5% Case: SOD123 Kind of package: reel; tape Semiconductor structure: single diode Manufacturer series: MMSZ52xxB Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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HUF76629D3ST | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 20A; 150W; DPAK Case: DPAK Mounting: SMD Power dissipation: 150W Gate charge: 39nC Polarisation: unipolar Drain current: 20A Kind of channel: enhancement Drain-source voltage: 100V Type of transistor: N-MOSFET Gate-source voltage: ±16V Kind of package: reel; tape On-state resistance: 52mΩ |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||||
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MC14106BDG | ONSEMI |
Category: Gates, inverters Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C Mounting: SMD Operating temperature: -55...125°C Delay time: 100ns Supply voltage: 3...18V DC Kind of gate: NOT Type of integrated circuit: digital Technology: CMOS Kind of input: with Schmitt trigger Number of inputs: 1 Kind of package: tube Case: SO14 Family: HEF4000B Number of channels: hex; 6 |
на замовлення 181 шт: термін постачання 14-30 дні (днів) |
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MC14106BDTR2G | ONSEMI |
Category: Gates, inverters Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; TSSOP14; 3÷18VDC; -55÷125°C Mounting: SMD Operating temperature: -55...125°C Delay time: 100ns Supply voltage: 3...18V DC Kind of gate: NOT Type of integrated circuit: digital Technology: CMOS Kind of input: with Schmitt trigger Number of inputs: 1 Kind of package: reel; tape Case: TSSOP14 Family: HEF4000B Number of channels: hex; 6 |
на замовлення 2225 шт: термін постачання 14-30 дні (днів) |
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NLV14106BDTR2G | ONSEMI |
Category: Gates, inverters Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; TSSOP14; 3÷18VDC; -55÷125°C Mounting: SMD Operating temperature: -55...125°C Supply voltage: 3...18V DC Kind of gate: NOT Type of integrated circuit: digital Technology: CMOS Quiescent current: 30µA Kind of input: with Schmitt trigger Number of inputs: 1 Kind of package: reel; tape Case: TSSOP14 Number of channels: hex; 6 |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||||
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SBC857ALT1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.225/0.3W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.225/0.3W Case: SOT23; TO236AB Current gain: 125...250 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Application: automotive industry |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||||
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ESD9L3.3ST5G | ONSEMI |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; ESD; 0.15W; 4.8V; SOD923; reel,tape; 0.5÷0.9pF Type of diode: TVS Peak pulse power dissipation: 0.15W Max. off-state voltage: 3.3V Breakdown voltage: 4.8V Case: SOD923 Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Version: ESD Capacitance: 0.5...0.9pF |
на замовлення 6779 шт: термін постачання 14-30 дні (днів) |
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| SS38 | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMC; SMD; 80V; 3A; reel,tape Type of diode: Schottky rectifying Case: SMC Mounting: SMD Max. off-state voltage: 80V Load current: 3A Semiconductor structure: single diode Max. forward voltage: 0.85V Max. forward impulse current: 100A Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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NTZD5110NT1G | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.225A; 0.28W; SOT563F; ESD Mounting: SMD Case: SOT563F Power dissipation: 0.28W Polarisation: unipolar Version: ESD Drain current: 0.225A Kind of channel: enhancement Drain-source voltage: 60V Type of transistor: N-MOSFET x2 Gate-source voltage: ±20V Kind of package: reel; tape On-state resistance: 1.6Ω |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NRVB0530T1G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.5A; reel,tape Type of diode: Schottky switching Case: SOD123 Mounting: SMD Max. off-state voltage: 30V Load current: 0.5A Semiconductor structure: single diode Max. forward voltage: 0.43V Max. forward impulse current: 5.5A Kind of package: reel; tape Application: automotive industry |
на замовлення 4128 шт: термін постачання 14-30 дні (днів) |
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NTHL041N60S5H | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 36A; Idm: 200A; 329W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 36A Case: TO247 Gate-source voltage: ±30V On-state resistance: 32.8mΩ Mounting: THT Gate charge: 108nC Kind of channel: enhancement Kind of package: tube Pulsed drain current: 200A Power dissipation: 329W |
на замовлення 101 шт: термін постачання 14-30 дні (днів) |
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| DTC123EET1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416 Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.3W Case: SC75; SOT416 Mounting: SMD Kind of package: reel; tape Base resistor: 2.2kΩ Base-emitter resistor: 2.2kΩ Current gain: 8...15 Quantity in set/package: 3000pcs. |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| DTC123EM3T5G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 2.2kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.6W Case: SOT723 Mounting: SMD Kind of package: reel; tape Base resistor: 2.2kΩ Base-emitter resistor: 2.2kΩ Current gain: 8...15 Quantity in set/package: 8000pcs. |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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MBRS190T3G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMB; SMD; 90V; 2A; reel,tape Type of diode: Schottky rectifying Case: SMB Mounting: SMD Max. off-state voltage: 90V Load current: 2A Semiconductor structure: single diode Max. forward voltage: 0.75V Kind of package: reel; tape |
на замовлення 1342 шт: термін постачання 14-30 дні (днів) |
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FOD3150 | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; DIP8; 50kV/μs Mounting: THT Slew rate: 50kV/μs Kind of output: transistor Insulation voltage: 5kV Max. off-state voltage: 5V Type of optocoupler: optocoupler Turn-on time: 60ns Output voltage: 0...35V Case: DIP8 Turn-off time: 60ns Number of channels: 1 |
на замовлення 256 шт: термін постачання 14-30 дні (днів) |
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| ESD7181MUT5G | ONSEMI |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 20.5÷35V; bidirectional; X3DFN2; reel,tape Mounting: SMD Kind of package: reel; tape Semiconductor structure: bidirectional Case: X3DFN2 Type of diode: TVS Breakdown voltage: 20.5...35V Max. off-state voltage: 18.5V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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NCP1607BDR2G | ONSEMI |
Category: Drivers - integrated circuits Description: IC: PMIC; 500÷800mA; 9.5÷20VDC; SO8; Topology: boost Type of integrated circuit: PMIC Output current: 500...800mA Mounting: SMD Operating voltage: 9.5...20V DC Number of channels: 1 Operating temperature: -40...125°C Case: SO8 Topology: boost |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NTP125N65S3H | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 67A; 171W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 24A Pulsed drain current: 67A Power dissipation: 171W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 0.125Ω Mounting: THT Gate charge: 44nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| FCMT125N65S3 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 60A; 181W; PQFN4 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 24A Pulsed drain current: 60A Power dissipation: 181W Case: PQFN4 Gate-source voltage: ±30V On-state resistance: 0.125Ω Mounting: SMD Gate charge: 49nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||||
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MMSD701T1G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SOD123; SMD; 70V; 0.2A; reel,tape Case: SOD123 Mounting: SMD Max. forward voltage: 1V Max. off-state voltage: 70V Load current: 0.2A Kind of package: reel; tape Semiconductor structure: single diode Capacitance: 1pF Type of diode: Schottky switching |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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LM337T | ONSEMI |
Category: Adjustable voltage regulators Description: IC: voltage regulator; linear,adjustable; -37÷-1.2V; 1.5A; THT Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; linear Output voltage: -37...-1.2V Output current: 1.5A Case: TO220-3 Mounting: THT Kind of package: tube Operating temperature: 0...125°C Number of channels: 1 Heatsink thickness: 0.51...0.61mm Input voltage: 3...40V |
товару немає в наявності |
Мінімальне замовлення: 3 шт В кошику од. на суму грн. | ||||||||||||||||||
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DF04M | ONSEMI |
Category: SMD/THT sing. phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 400V; If: 1.5A; Ifsm: 50A Type of bridge rectifier: single-phase Max. off-state voltage: 0.4kV Load current: 1.5A Max. forward impulse current: 50A Case: MDIP4L Electrical mounting: THT Kind of package: tube Max. forward voltage: 1.1V Features of semiconductor devices: glass passivated |
товару немає в наявності |
Мінімальне замовлення: 3 шт В кошику од. на суму грн. | ||||||||||||||||||
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BC847BPDXV6T1G | ONSEMI |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; complementary pair; 45V; 0.1A Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: complementary pair Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.5W Case: SOT563 Current gain: 200...475 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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SBC847BPDXV6T1G | ONSEMI |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; complementary pair; 45V; 0.1A Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: complementary pair Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.5W Case: SOT563 Current gain: 200...475 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Application: automotive industry |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | ||||||||||||||||||
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MC14023BDR2G | ONSEMI |
Category: Gates, inverters Description: IC: digital; NAND; Ch: 3; IN: 3; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C Technology: CMOS Type of integrated circuit: digital Family: HEF4000B Kind of gate: NAND Mounting: SMD Case: SO14 Number of channels: triple; 3 Operating temperature: -55...125°C Delay time: 130ns Number of inputs: 3 Supply voltage: 3...18V DC Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||||
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MBRS2040LT3G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMB; SMD; 40V; 2A; reel,tape Type of diode: Schottky rectifying Case: SMB Mounting: SMD Max. off-state voltage: 40V Load current: 2A Semiconductor structure: single diode Max. forward voltage: 0.45V Max. load current: 4A Kind of package: reel; tape |
на замовлення 3670 шт: термін постачання 14-30 дні (днів) |
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MC74LVXT4051DR2G | ONSEMI |
Category: Analog multiplexers and switches Description: IC: digital; demultiplexer,multiplexer; Ch: 1; SO16; 2.5÷6VDC; 80uA Type of integrated circuit: digital Kind of integrated circuit: demultiplexer; multiplexer Number of channels: 1 Case: SO16 Supply voltage: 2.5...6V DC Mounting: SMD Kind of package: reel; tape Operating temperature: -55...125°C Quiescent current: 80µA Technology: CMOS; TTL |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||||
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MC74LVXT4051DTR2G | ONSEMI |
Category: Decoders, multiplexers, switches Description: IC: digital; 8bit,analog,demultiplexer,multiplexer; Ch: 1; IN: 8 Type of integrated circuit: digital Kind of integrated circuit: 8bit; analog; demultiplexer; multiplexer Number of channels: 1 Case: TSSOP16 Supply voltage: -6...0V DC; 2.5...6V DC Mounting: SMD Kind of package: reel; tape Operating temperature: -55...125°C Technology: CMOS; TTL Manufacturer series: LVXT Number of inputs: 8 Family: LVXT |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||||
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RFP12N10L | ONSEMI |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 12A; 60W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 12A Power dissipation: 60W Case: TO220AB Gate-source voltage: ±10V On-state resistance: 0.2Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: logic level |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| NTTFS012N10MDTAG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 45A; Idm: 217A; 62W; WDFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 45A Pulsed drain current: 217A Power dissipation: 62W Case: WDFN8 Gate-source voltage: ±20V On-state resistance: 14.4mΩ Mounting: SMD Gate charge: 13nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. | |||||||||||||||||||
| NVMYS012N10MCLTWG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 52A; Idm: 283A; 36W; LFPAK56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 52A Pulsed drain current: 283A Power dissipation: 36W Case: LFPAK56 Gate-source voltage: ±20V On-state resistance: 12.2mΩ Mounting: SMD Gate charge: 19nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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1SMB5913BT3G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 3W; 3.3V; SMD; SMB; single diode; reel,tape; 1SMB59xxB Power dissipation: 3W Case: SMB Mounting: SMD Kind of package: reel; tape Tolerance: ±5% Manufacturer series: 1SMB59xxB Semiconductor structure: single diode Zener voltage: 3.3V Type of diode: Zener |
на замовлення 1120 шт: термін постачання 14-30 дні (днів) |
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MMSZ5226BT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 3.3V; SMD; SOD123; single diode; reel,tape Type of diode: Zener Power dissipation: 0.5W Zener voltage: 3.3V Mounting: SMD Tolerance: ±5% Case: SOD123 Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: MMSZ52xxB |
на замовлення 28164 шт: термін постачання 14-30 дні (днів) |
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| FUSB302BMPX | ONSEMI |
Category: Battery and battery cells controllers Description: IC: interface; transceiver; WQFN14; 2.8÷5.5V; Interface: USB; 5Gbps Type of integrated circuit: interface Kind of integrated circuit: transceiver USB speed: Full Speed Supply voltage: 2.8...5.5V Case: WQFN14 Mounting: SMD Operating temperature: -40...125°C Interface: USB Data transfer rate: 5Gbps DC supply current: 25µA Version: ESD |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||||
| FUSB302B01MPX | ONSEMI |
Category: Battery and battery cells controllers Description: IC: interface; transceiver; WQFN14; 2.7÷21V; Interface: I2C,USB Type of integrated circuit: interface Kind of integrated circuit: transceiver USB speed: Full Speed Supply voltage: 2.7...21V Case: WQFN14 Mounting: SMD Operating temperature: -40...85°C Interface: I2C; USB Data transfer rate: 5Gbps |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||||
| FUSB302B11MPX | ONSEMI |
Category: Battery and battery cells controllers Description: IC: interface; transceiver; WQFN14; 2.85÷5.5V; 5Gbps Type of integrated circuit: interface Kind of integrated circuit: transceiver USB speed: Full Speed Supply voltage: 2.85...5.5V Case: WQFN14 Mounting: SMD Operating temperature: -40...85°C Interface: I2C; USB; USB 2.0 Data transfer rate: 5Gbps Version: Standard; USB 2.0 |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||||
| FUSB302BUCX | ONSEMI |
Category: USB interfaces - integrated circuits Description: IC: USB interface; USB C controller; Full Speed; 2.7÷5.5VDC Type of integrated circuit: USB interface Kind of integrated circuit: USB C controller USB speed: Full Speed Supply voltage: 2.7...5.5V DC Case: WLCSP9 Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||||
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1N4003G | ONSEMI |
Category: THT universal diodes Description: Diode: rectifying; THT; 200V; 1A; Ifsm: 30A; CASE59; bulk; Ufmax: 1.1V Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 1A Semiconductor structure: single diode Max. forward impulse current: 30A Case: CASE59 Kind of package: bulk Max. forward voltage: 1.1V Manufacturer standard package: 1000pcs. |
на замовлення 35 шт: термін постачання 14-30 дні (днів) |
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1N4003RLG | ONSEMI |
Category: THT universal diodes Description: Diode: rectifying; THT; 200V; 1A; Ifsm: 30A; CASE59; reel,tape Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 1A Semiconductor structure: single diode Max. forward impulse current: 30A Case: CASE59 Kind of package: reel; tape Max. forward voltage: 1.1V Manufacturer standard package: 5000pcs. |
на замовлення 4320 шт: термін постачання 14-30 дні (днів) |
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MPSA92G | ONSEMI |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 300V; 0.5A; 0.625W; TO92 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 300V Collector current: 0.5A Power dissipation: 0.625W Case: TO92 Mounting: THT |
товару немає в наявності |
Мінімальне замовлення: 10 шт В кошику од. на суму грн. | ||||||||||||||||||
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FOD3180 | ONSEMI |
Category: Optocouplers - others Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; DIP8; 15kV/μs Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 5kV Case: DIP8 Turn-on time: 75ns Turn-off time: 55ns Slew rate: 15kV/μs Max. off-state voltage: 5V Output voltage: 0...25V |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||||||
| FOD3180TV | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 2; OUT: MOSFET; Uinsul: 5kV; PDIP8; 15kV/μs Case: PDIP8 Mounting: THT Insulation voltage: 5kV Max. off-state voltage: 5V Type of optocoupler: optocoupler Number of channels: 2 Manufacturer series: FOD3180 Slew rate: 15kV/μs Kind of output: MOSFET |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | |||||||||||||||||||
| NCP1246ALD065R2G | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; AC/DC switcher,PWM controller; SO7; flyback Case: SO7 Mounting: SMD Output current: 500...800mA Type of integrated circuit: PMIC Operating temperature: -40...125°C Kind of integrated circuit: AC/DC switcher; PWM controller Number of channels: 1 Frequency: 58...72kHz Operating voltage: 8.9...26.5V DC Topology: flyback |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||||||||||||
| FDMC8321LDC | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 108A; Idm: 320A; 56W; PQFN8 Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Case: PQFN8 Kind of package: reel; tape Polarisation: unipolar Gate charge: 60nC On-state resistance: 4.1mΩ Power dissipation: 56W Gate-source voltage: ±20V Drain-source voltage: 40V Drain current: 108A Pulsed drain current: 320A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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NCP361SNT1G | ONSEMI |
Category: Drivers - integrated circuits Description: IC: driver; TSOP5; Ch: 1; Uin: 1.2÷20V; OUT: transistor Type of integrated circuit: driver Case: TSOP5 Mounting: SMD Operating temperature: -40...85°C Number of channels: 1 Input voltage: 1.2...20V Application: USB Threshold on-voltage: 3V Kind of output: transistor |
на замовлення 1567 шт: термін постачання 14-30 дні (днів) |
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NCP711ASN300T1G | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.1A; TSOP5; SMD; Ch: 1 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Output voltage: 3V Output current: 0.1A Case: TSOP5 Mounting: SMD Kind of package: reel; tape Number of channels: 1 |
на замовлення 2000 шт: термін постачання 14-30 дні (днів) |
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M74VHC1G126DTT1G | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; TSOP5; VHC; 40uA Type of integrated circuit: digital Case: TSOP5 Mounting: SMD Manufacturer series: VHC Kind of package: reel; tape Operating temperature: -55...125°C Number of channels: 1 Quiescent current: 40µA Kind of integrated circuit: buffer; non-inverting Supply voltage: 2...5.5V DC Kind of output: 3-state Technology: CMOS |
на замовлення 1 шт: термін постачання 14-30 дні (днів) |
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NCP551SN50T1G | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 5V; 10mA; TSOP5; SMD; ±2% Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.15V Output voltage: 5V Output current: 10mA Case: TSOP5 Mounting: SMD Manufacturer series: NCP551 Operating temperature: -40...85°C Tolerance: ±2% Number of channels: 1 Input voltage: 12V |
на замовлення 3000 шт: термін постачання 14-30 дні (днів) |
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BD241CG | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 100V; 3A; 40W; TO220AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 3A Power dissipation: 40W Case: TO220AB Mounting: THT Kind of package: tube Frequency: 3MHz Current gain: 2.5 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BD787G | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 60V; 4A; 15W; TO225 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 4A Power dissipation: 15W Case: TO225 Current gain: 40...250 Mounting: THT Kind of package: bulk Frequency: 50MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BCX19LT1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.225W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.5A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 100...600 Mounting: SMD Kind of package: reel; tape |
на замовлення 2790 шт: термін постачання 14-30 дні (днів) |
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BCW71 | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.35W; SOT23,TO236AB Case: SOT23; TO236AB Mounting: SMD Collector-emitter voltage: 45V Power dissipation: 0.35W Polarisation: bipolar Type of transistor: NPN Current gain: 110...220 Kind of package: reel; tape Frequency: 330MHz Collector current: 0.5A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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FDD86102LZ | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 35A; 54W; DPAK Mounting: SMD Power dissipation: 54W Gate charge: 26nC Polarisation: unipolar Technology: PowerTrench® Drain current: 35A Kind of channel: enhancement Drain-source voltage: 100V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: DPAK On-state resistance: 40mΩ |
на замовлення 1134 шт: термін постачання 14-30 дні (днів) |
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MMBD4148se | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT23; Ufmax: 1V; Ifsm: 2A Type of diode: switching Mounting: SMD Max. off-state voltage: 0.1kV Load current: 0.2A Reverse recovery time: 4ns Semiconductor structure: double series Capacitance: 4pF Case: SOT23 Max. forward impulse current: 2A Power dissipation: 0.35W Kind of package: reel; tape Max. forward voltage: 1V |
на замовлення 5755 шт: термін постачання 14-30 дні (днів) |
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MMBD4148CA | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT23; Ufmax: 1V; Ifsm: 2A Type of diode: switching Mounting: SMD Max. off-state voltage: 0.1kV Load current: 0.2A Reverse recovery time: 4ns Semiconductor structure: common anode; double Capacitance: 4pF Case: SOT23 Max. forward impulse current: 2A Power dissipation: 0.35W Kind of package: reel; tape Max. forward voltage: 1V Leakage current: 5µA |
на замовлення 17980 шт: термін постачання 14-30 дні (днів) |
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SMMSD4148T3G | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD123; Ufmax: 1V; Ifsm: 1A Type of diode: switching Mounting: SMD Max. off-state voltage: 0.1kV Load current: 0.2A Reverse recovery time: 4ns Semiconductor structure: single diode Case: SOD123 Max. forward voltage: 1V Max. forward impulse current: 1A Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||||||
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MC33064P-5G | ONSEMI |
Category: Watchdog and reset circuits Description: IC: supervisor circuit; power on reset monitor (PoR); 1÷6.5VDC Type of integrated circuit: supervisor circuit Kind of integrated circuit: power on reset monitor (PoR) Kind of RESET output: open collector Active logical level: low Supply voltage: 1...6.5V DC Case: TO92 Operating temperature: -40...85°C Mounting: SMD DC supply current: 390µA Maximum output current: 60mA Threshold on-voltage: 4.59V Kind of package: bulk Number of channels: 1 |
на замовлення 386 шт: термін постачання 14-30 дні (днів) |
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MC34064D-5G | ONSEMI |
Category: Supervisor circuits Description: IC: supervisor circuit; open drain; Active logical level: low Type of integrated circuit: supervisor circuit Kind of integrated circuit: power on reset monitor (PoR); voltage detector Case: SO8 Mounting: SMD Number of channels: 1 Operating temperature: 0...70°C Active logical level: low Threshold on-voltage: 4.61V Kind of RESET output: open drain Supply voltage: 6.5V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BZX85C18 | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 1W; 18V; bulk; DO41; single diode; BZX85C Type of diode: Zener Power dissipation: 1W Zener voltage: 18V Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: BZX85C Kind of package: bulk |
товару немає в наявності |
Мінімальне замовлення: 10 шт В кошику од. на суму грн. |
| MMSZ5237BT1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 8.2V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 8.2V
Case: SOD123
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MMSZ52xxB
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 8.2V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 8.2V
Case: SOD123
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MMSZ52xxB
на замовлення 26220 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 46+ | 10.06 грн |
| 77+ | 5.52 грн |
| 112+ | 3.80 грн |
| 130+ | 3.28 грн |
| 250+ | 2.72 грн |
| 500+ | 2.39 грн |
| 588+ | 1.65 грн |
| 1615+ | 1.55 грн |
| 9000+ | 1.51 грн |
| SZMMSZ5237BT1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 8.2V; SMD; SOD123; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 8.2V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 8.2V; SMD; SOD123; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 8.2V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| HUF76629D3ST |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 20A; 150W; DPAK
Case: DPAK
Mounting: SMD
Power dissipation: 150W
Gate charge: 39nC
Polarisation: unipolar
Drain current: 20A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±16V
Kind of package: reel; tape
On-state resistance: 52mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 20A; 150W; DPAK
Case: DPAK
Mounting: SMD
Power dissipation: 150W
Gate charge: 39nC
Polarisation: unipolar
Drain current: 20A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±16V
Kind of package: reel; tape
On-state resistance: 52mΩ
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| MC14106BDG |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Mounting: SMD
Operating temperature: -55...125°C
Delay time: 100ns
Supply voltage: 3...18V DC
Kind of gate: NOT
Type of integrated circuit: digital
Technology: CMOS
Kind of input: with Schmitt trigger
Number of inputs: 1
Kind of package: tube
Case: SO14
Family: HEF4000B
Number of channels: hex; 6
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Mounting: SMD
Operating temperature: -55...125°C
Delay time: 100ns
Supply voltage: 3...18V DC
Kind of gate: NOT
Type of integrated circuit: digital
Technology: CMOS
Kind of input: with Schmitt trigger
Number of inputs: 1
Kind of package: tube
Case: SO14
Family: HEF4000B
Number of channels: hex; 6
на замовлення 181 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 34.74 грн |
| 36+ | 27.42 грн |
| 98+ | 25.98 грн |
| MC14106BDTR2G |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; TSSOP14; 3÷18VDC; -55÷125°C
Mounting: SMD
Operating temperature: -55...125°C
Delay time: 100ns
Supply voltage: 3...18V DC
Kind of gate: NOT
Type of integrated circuit: digital
Technology: CMOS
Kind of input: with Schmitt trigger
Number of inputs: 1
Kind of package: reel; tape
Case: TSSOP14
Family: HEF4000B
Number of channels: hex; 6
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; TSSOP14; 3÷18VDC; -55÷125°C
Mounting: SMD
Operating temperature: -55...125°C
Delay time: 100ns
Supply voltage: 3...18V DC
Kind of gate: NOT
Type of integrated circuit: digital
Technology: CMOS
Kind of input: with Schmitt trigger
Number of inputs: 1
Kind of package: reel; tape
Case: TSSOP14
Family: HEF4000B
Number of channels: hex; 6
на замовлення 2225 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 33.83 грн |
| 18+ | 24.20 грн |
| 25+ | 21.82 грн |
| 56+ | 17.49 грн |
| 153+ | 16.56 грн |
| NLV14106BDTR2G |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; TSSOP14; 3÷18VDC; -55÷125°C
Mounting: SMD
Operating temperature: -55...125°C
Supply voltage: 3...18V DC
Kind of gate: NOT
Type of integrated circuit: digital
Technology: CMOS
Quiescent current: 30µA
Kind of input: with Schmitt trigger
Number of inputs: 1
Kind of package: reel; tape
Case: TSSOP14
Number of channels: hex; 6
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; TSSOP14; 3÷18VDC; -55÷125°C
Mounting: SMD
Operating temperature: -55...125°C
Supply voltage: 3...18V DC
Kind of gate: NOT
Type of integrated circuit: digital
Technology: CMOS
Quiescent current: 30µA
Kind of input: with Schmitt trigger
Number of inputs: 1
Kind of package: reel; tape
Case: TSSOP14
Number of channels: hex; 6
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| SBC857ALT1G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.225/0.3W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.225/0.3W
Case: SOT23; TO236AB
Current gain: 125...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.225/0.3W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.225/0.3W
Case: SOT23; TO236AB
Current gain: 125...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| ESD9L3.3ST5G |
|
Виробник: ONSEMI
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 0.15W; 4.8V; SOD923; reel,tape; 0.5÷0.9pF
Type of diode: TVS
Peak pulse power dissipation: 0.15W
Max. off-state voltage: 3.3V
Breakdown voltage: 4.8V
Case: SOD923
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Version: ESD
Capacitance: 0.5...0.9pF
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 0.15W; 4.8V; SOD923; reel,tape; 0.5÷0.9pF
Type of diode: TVS
Peak pulse power dissipation: 0.15W
Max. off-state voltage: 3.3V
Breakdown voltage: 4.8V
Case: SOD923
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Version: ESD
Capacitance: 0.5...0.9pF
на замовлення 6779 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 21+ | 21.94 грн |
| 29+ | 14.94 грн |
| 33+ | 12.99 грн |
| 50+ | 9.25 грн |
| 100+ | 8.07 грн |
| 124+ | 7.81 грн |
| 250+ | 7.13 грн |
| SS38 |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 80V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 80V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.85V
Max. forward impulse current: 100A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 80V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 80V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.85V
Max. forward impulse current: 100A
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| NTZD5110NT1G |
|
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.225A; 0.28W; SOT563F; ESD
Mounting: SMD
Case: SOT563F
Power dissipation: 0.28W
Polarisation: unipolar
Version: ESD
Drain current: 0.225A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET x2
Gate-source voltage: ±20V
Kind of package: reel; tape
On-state resistance: 1.6Ω
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.225A; 0.28W; SOT563F; ESD
Mounting: SMD
Case: SOT563F
Power dissipation: 0.28W
Polarisation: unipolar
Version: ESD
Drain current: 0.225A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET x2
Gate-source voltage: ±20V
Kind of package: reel; tape
On-state resistance: 1.6Ω
товару немає в наявності
В кошику
од. на суму грн.
| NRVB0530T1G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.5A; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward voltage: 0.43V
Max. forward impulse current: 5.5A
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.5A; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward voltage: 0.43V
Max. forward impulse current: 5.5A
Kind of package: reel; tape
Application: automotive industry
на замовлення 4128 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 36+ | 12.80 грн |
| 41+ | 10.36 грн |
| 46+ | 9.34 грн |
| 100+ | 7.30 грн |
| 500+ | 6.96 грн |
| NTHL041N60S5H |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 36A; Idm: 200A; 329W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 36A
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 32.8mΩ
Mounting: THT
Gate charge: 108nC
Kind of channel: enhancement
Kind of package: tube
Pulsed drain current: 200A
Power dissipation: 329W
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 36A; Idm: 200A; 329W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 36A
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 32.8mΩ
Mounting: THT
Gate charge: 108nC
Kind of channel: enhancement
Kind of package: tube
Pulsed drain current: 200A
Power dissipation: 329W
на замовлення 101 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 736.03 грн |
| 2+ | 594.31 грн |
| 5+ | 561.20 грн |
| 10+ | 539.97 грн |
| DTC123EET1G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC75; SOT416
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Current gain: 8...15
Quantity in set/package: 3000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC75; SOT416
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Current gain: 8...15
Quantity in set/package: 3000pcs.
товару немає в наявності
В кошику
од. на суму грн.
| DTC123EM3T5G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.6W
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Current gain: 8...15
Quantity in set/package: 8000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.6W
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Current gain: 8...15
Quantity in set/package: 8000pcs.
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| MBRS190T3G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 90V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 90V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 90V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 90V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Kind of package: reel; tape
на замовлення 1342 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 41.14 грн |
| 15+ | 28.36 грн |
| 18+ | 24.54 грн |
| 50+ | 18.08 грн |
| 100+ | 16.13 грн |
| 500+ | 12.74 грн |
| 1000+ | 12.40 грн |
| FOD3150 |
|
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; DIP8; 50kV/μs
Mounting: THT
Slew rate: 50kV/μs
Kind of output: transistor
Insulation voltage: 5kV
Max. off-state voltage: 5V
Type of optocoupler: optocoupler
Turn-on time: 60ns
Output voltage: 0...35V
Case: DIP8
Turn-off time: 60ns
Number of channels: 1
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; DIP8; 50kV/μs
Mounting: THT
Slew rate: 50kV/μs
Kind of output: transistor
Insulation voltage: 5kV
Max. off-state voltage: 5V
Type of optocoupler: optocoupler
Turn-on time: 60ns
Output voltage: 0...35V
Case: DIP8
Turn-off time: 60ns
Number of channels: 1
на замовлення 256 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 76.41 грн |
| 10+ | 71.32 грн |
| 15+ | 68.77 грн |
| 25+ | 63.68 грн |
| 30+ | 62.83 грн |
| ESD7181MUT5G |
|
Виробник: ONSEMI
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 20.5÷35V; bidirectional; X3DFN2; reel,tape
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: bidirectional
Case: X3DFN2
Type of diode: TVS
Breakdown voltage: 20.5...35V
Max. off-state voltage: 18.5V
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 20.5÷35V; bidirectional; X3DFN2; reel,tape
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: bidirectional
Case: X3DFN2
Type of diode: TVS
Breakdown voltage: 20.5...35V
Max. off-state voltage: 18.5V
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| NCP1607BDR2G |
|
Виробник: ONSEMI
Category: Drivers - integrated circuits
Description: IC: PMIC; 500÷800mA; 9.5÷20VDC; SO8; Topology: boost
Type of integrated circuit: PMIC
Output current: 500...800mA
Mounting: SMD
Operating voltage: 9.5...20V DC
Number of channels: 1
Operating temperature: -40...125°C
Case: SO8
Topology: boost
Category: Drivers - integrated circuits
Description: IC: PMIC; 500÷800mA; 9.5÷20VDC; SO8; Topology: boost
Type of integrated circuit: PMIC
Output current: 500...800mA
Mounting: SMD
Operating voltage: 9.5...20V DC
Number of channels: 1
Operating temperature: -40...125°C
Case: SO8
Topology: boost
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| NTP125N65S3H |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 67A; 171W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 67A
Power dissipation: 171W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 67A; 171W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 67A
Power dissipation: 171W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Kind of channel: enhancement
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| FCMT125N65S3 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 60A; 181W; PQFN4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 60A
Power dissipation: 181W
Case: PQFN4
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: SMD
Gate charge: 49nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 60A; 181W; PQFN4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 60A
Power dissipation: 181W
Case: PQFN4
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: SMD
Gate charge: 49nC
Kind of package: reel; tape
Kind of channel: enhancement
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Мінімальне замовлення: 3000 шт
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| MMSD701T1G |
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 70V; 0.2A; reel,tape
Case: SOD123
Mounting: SMD
Max. forward voltage: 1V
Max. off-state voltage: 70V
Load current: 0.2A
Kind of package: reel; tape
Semiconductor structure: single diode
Capacitance: 1pF
Type of diode: Schottky switching
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 70V; 0.2A; reel,tape
Case: SOD123
Mounting: SMD
Max. forward voltage: 1V
Max. off-state voltage: 70V
Load current: 0.2A
Kind of package: reel; tape
Semiconductor structure: single diode
Capacitance: 1pF
Type of diode: Schottky switching
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| LM337T |
|
Виробник: ONSEMI
Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; -37÷-1.2V; 1.5A; THT
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; linear
Output voltage: -37...-1.2V
Output current: 1.5A
Case: TO220-3
Mounting: THT
Kind of package: tube
Operating temperature: 0...125°C
Number of channels: 1
Heatsink thickness: 0.51...0.61mm
Input voltage: 3...40V
Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; -37÷-1.2V; 1.5A; THT
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; linear
Output voltage: -37...-1.2V
Output current: 1.5A
Case: TO220-3
Mounting: THT
Kind of package: tube
Operating temperature: 0...125°C
Number of channels: 1
Heatsink thickness: 0.51...0.61mm
Input voltage: 3...40V
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Мінімальне замовлення: 3 шт
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| DF04M |
|
Виробник: ONSEMI
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 1.5A; Ifsm: 50A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 1.5A
Max. forward impulse current: 50A
Case: MDIP4L
Electrical mounting: THT
Kind of package: tube
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 1.5A; Ifsm: 50A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 1.5A
Max. forward impulse current: 50A
Case: MDIP4L
Electrical mounting: THT
Kind of package: tube
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
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Мінімальне замовлення: 3 шт
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| BC847BPDXV6T1G |
|
Виробник: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 45V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT563
Current gain: 200...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 45V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT563
Current gain: 200...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
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| SBC847BPDXV6T1G |
|
Виробник: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 45V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT563
Current gain: 200...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 45V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT563
Current gain: 200...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
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Мінімальне замовлення: 4000 шт
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| MC14023BDR2G |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 3; IN: 3; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Technology: CMOS
Type of integrated circuit: digital
Family: HEF4000B
Kind of gate: NAND
Mounting: SMD
Case: SO14
Number of channels: triple; 3
Operating temperature: -55...125°C
Delay time: 130ns
Number of inputs: 3
Supply voltage: 3...18V DC
Kind of package: reel; tape
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 3; IN: 3; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Technology: CMOS
Type of integrated circuit: digital
Family: HEF4000B
Kind of gate: NAND
Mounting: SMD
Case: SO14
Number of channels: triple; 3
Operating temperature: -55...125°C
Delay time: 130ns
Number of inputs: 3
Supply voltage: 3...18V DC
Kind of package: reel; tape
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Мінімальне замовлення: 2500 шт
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| MBRS2040LT3G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 40V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 40V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.45V
Max. load current: 4A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 40V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 40V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.45V
Max. load current: 4A
Kind of package: reel; tape
на замовлення 3670 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 40.23 грн |
| 16+ | 27.34 грн |
| 18+ | 24.11 грн |
| 25+ | 20.38 грн |
| 50+ | 17.91 грн |
| 100+ | 15.79 грн |
| 250+ | 13.41 грн |
| 500+ | 11.80 грн |
| 1000+ | 10.36 грн |
| MC74LVXT4051DR2G |
|
Виробник: ONSEMI
Category: Analog multiplexers and switches
Description: IC: digital; demultiplexer,multiplexer; Ch: 1; SO16; 2.5÷6VDC; 80uA
Type of integrated circuit: digital
Kind of integrated circuit: demultiplexer; multiplexer
Number of channels: 1
Case: SO16
Supply voltage: 2.5...6V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -55...125°C
Quiescent current: 80µA
Technology: CMOS; TTL
Category: Analog multiplexers and switches
Description: IC: digital; demultiplexer,multiplexer; Ch: 1; SO16; 2.5÷6VDC; 80uA
Type of integrated circuit: digital
Kind of integrated circuit: demultiplexer; multiplexer
Number of channels: 1
Case: SO16
Supply voltage: 2.5...6V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -55...125°C
Quiescent current: 80µA
Technology: CMOS; TTL
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Мінімальне замовлення: 2500 шт
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| MC74LVXT4051DTR2G |
|
Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 8bit,analog,demultiplexer,multiplexer; Ch: 1; IN: 8
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; analog; demultiplexer; multiplexer
Number of channels: 1
Case: TSSOP16
Supply voltage: -6...0V DC; 2.5...6V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -55...125°C
Technology: CMOS; TTL
Manufacturer series: LVXT
Number of inputs: 8
Family: LVXT
Category: Decoders, multiplexers, switches
Description: IC: digital; 8bit,analog,demultiplexer,multiplexer; Ch: 1; IN: 8
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; analog; demultiplexer; multiplexer
Number of channels: 1
Case: TSSOP16
Supply voltage: -6...0V DC; 2.5...6V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -55...125°C
Technology: CMOS; TTL
Manufacturer series: LVXT
Number of inputs: 8
Family: LVXT
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Мінімальне замовлення: 2500 шт
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| RFP12N10L |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 12A; 60W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 12A
Power dissipation: 60W
Case: TO220AB
Gate-source voltage: ±10V
On-state resistance: 0.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 12A; 60W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 12A
Power dissipation: 60W
Case: TO220AB
Gate-source voltage: ±10V
On-state resistance: 0.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
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| NTTFS012N10MDTAG |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 45A; Idm: 217A; 62W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 45A
Pulsed drain current: 217A
Power dissipation: 62W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 14.4mΩ
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 45A; Idm: 217A; 62W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 45A
Pulsed drain current: 217A
Power dissipation: 62W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 14.4mΩ
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhancement
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Мінімальне замовлення: 1500 шт
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| NVMYS012N10MCLTWG |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 52A; Idm: 283A; 36W; LFPAK56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 52A
Pulsed drain current: 283A
Power dissipation: 36W
Case: LFPAK56
Gate-source voltage: ±20V
On-state resistance: 12.2mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 52A; Idm: 283A; 36W; LFPAK56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 52A
Pulsed drain current: 283A
Power dissipation: 36W
Case: LFPAK56
Gate-source voltage: ±20V
On-state resistance: 12.2mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
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| 1SMB5913BT3G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 3.3V; SMD; SMB; single diode; reel,tape; 1SMB59xxB
Power dissipation: 3W
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Tolerance: ±5%
Manufacturer series: 1SMB59xxB
Semiconductor structure: single diode
Zener voltage: 3.3V
Type of diode: Zener
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 3.3V; SMD; SMB; single diode; reel,tape; 1SMB59xxB
Power dissipation: 3W
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Tolerance: ±5%
Manufacturer series: 1SMB59xxB
Semiconductor structure: single diode
Zener voltage: 3.3V
Type of diode: Zener
на замовлення 1120 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 34.74 грн |
| 27+ | 16.22 грн |
| 30+ | 14.52 грн |
| 50+ | 13.24 грн |
| 100+ | 12.14 грн |
| 129+ | 7.56 грн |
| 354+ | 7.13 грн |
| MMSZ5226BT1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.3V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MMSZ52xxB
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.3V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MMSZ52xxB
на замовлення 28164 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 39+ | 11.89 грн |
| 47+ | 9.17 грн |
| 70+ | 6.10 грн |
| 100+ | 4.80 грн |
| 250+ | 3.48 грн |
| 500+ | 2.78 грн |
| 594+ | 1.64 грн |
| 1632+ | 1.55 грн |
| FUSB302BMPX |
|
Виробник: ONSEMI
Category: Battery and battery cells controllers
Description: IC: interface; transceiver; WQFN14; 2.8÷5.5V; Interface: USB; 5Gbps
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
USB speed: Full Speed
Supply voltage: 2.8...5.5V
Case: WQFN14
Mounting: SMD
Operating temperature: -40...125°C
Interface: USB
Data transfer rate: 5Gbps
DC supply current: 25µA
Version: ESD
Category: Battery and battery cells controllers
Description: IC: interface; transceiver; WQFN14; 2.8÷5.5V; Interface: USB; 5Gbps
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
USB speed: Full Speed
Supply voltage: 2.8...5.5V
Case: WQFN14
Mounting: SMD
Operating temperature: -40...125°C
Interface: USB
Data transfer rate: 5Gbps
DC supply current: 25µA
Version: ESD
товару немає в наявності
Мінімальне замовлення: 3000 шт
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| FUSB302B01MPX |
|
Виробник: ONSEMI
Category: Battery and battery cells controllers
Description: IC: interface; transceiver; WQFN14; 2.7÷21V; Interface: I2C,USB
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
USB speed: Full Speed
Supply voltage: 2.7...21V
Case: WQFN14
Mounting: SMD
Operating temperature: -40...85°C
Interface: I2C; USB
Data transfer rate: 5Gbps
Category: Battery and battery cells controllers
Description: IC: interface; transceiver; WQFN14; 2.7÷21V; Interface: I2C,USB
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
USB speed: Full Speed
Supply voltage: 2.7...21V
Case: WQFN14
Mounting: SMD
Operating temperature: -40...85°C
Interface: I2C; USB
Data transfer rate: 5Gbps
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Мінімальне замовлення: 3000 шт
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| FUSB302B11MPX |
|
Виробник: ONSEMI
Category: Battery and battery cells controllers
Description: IC: interface; transceiver; WQFN14; 2.85÷5.5V; 5Gbps
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
USB speed: Full Speed
Supply voltage: 2.85...5.5V
Case: WQFN14
Mounting: SMD
Operating temperature: -40...85°C
Interface: I2C; USB; USB 2.0
Data transfer rate: 5Gbps
Version: Standard; USB 2.0
Category: Battery and battery cells controllers
Description: IC: interface; transceiver; WQFN14; 2.85÷5.5V; 5Gbps
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
USB speed: Full Speed
Supply voltage: 2.85...5.5V
Case: WQFN14
Mounting: SMD
Operating temperature: -40...85°C
Interface: I2C; USB; USB 2.0
Data transfer rate: 5Gbps
Version: Standard; USB 2.0
товару немає в наявності
Мінімальне замовлення: 3000 шт
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| FUSB302BUCX |
|
Виробник: ONSEMI
Category: USB interfaces - integrated circuits
Description: IC: USB interface; USB C controller; Full Speed; 2.7÷5.5VDC
Type of integrated circuit: USB interface
Kind of integrated circuit: USB C controller
USB speed: Full Speed
Supply voltage: 2.7...5.5V DC
Case: WLCSP9
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Category: USB interfaces - integrated circuits
Description: IC: USB interface; USB C controller; Full Speed; 2.7÷5.5VDC
Type of integrated circuit: USB interface
Kind of integrated circuit: USB C controller
USB speed: Full Speed
Supply voltage: 2.7...5.5V DC
Case: WLCSP9
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
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Мінімальне замовлення: 3000 шт
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| 1N4003G |
|
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 1A; Ifsm: 30A; CASE59; bulk; Ufmax: 1.1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Case: CASE59
Kind of package: bulk
Max. forward voltage: 1.1V
Manufacturer standard package: 1000pcs.
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 1A; Ifsm: 30A; CASE59; bulk; Ufmax: 1.1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Case: CASE59
Kind of package: bulk
Max. forward voltage: 1.1V
Manufacturer standard package: 1000pcs.
на замовлення 35 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 30+ | 15.54 грн |
| 35+ | 11.89 грн |
| 1N4003RLG |
|
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 1A; Ifsm: 30A; CASE59; reel,tape
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Case: CASE59
Kind of package: reel; tape
Max. forward voltage: 1.1V
Manufacturer standard package: 5000pcs.
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 1A; Ifsm: 30A; CASE59; reel,tape
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Case: CASE59
Kind of package: reel; tape
Max. forward voltage: 1.1V
Manufacturer standard package: 5000pcs.
на замовлення 4320 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 28+ | 16.46 грн |
| 49+ | 8.83 грн |
| 100+ | 5.59 грн |
| 500+ | 4.13 грн |
| 1000+ | 3.63 грн |
| MPSA92G |
|
Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 300V; 0.5A; 0.625W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.625W
Case: TO92
Mounting: THT
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 300V; 0.5A; 0.625W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.625W
Case: TO92
Mounting: THT
товару немає в наявності
Мінімальне замовлення: 10 шт
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| FOD3180 |
|
Виробник: ONSEMI
Category: Optocouplers - others
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; DIP8; 15kV/μs
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
Case: DIP8
Turn-on time: 75ns
Turn-off time: 55ns
Slew rate: 15kV/μs
Max. off-state voltage: 5V
Output voltage: 0...25V
Category: Optocouplers - others
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; DIP8; 15kV/μs
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
Case: DIP8
Turn-on time: 75ns
Turn-off time: 55ns
Slew rate: 15kV/μs
Max. off-state voltage: 5V
Output voltage: 0...25V
товару немає в наявності
Мінімальне замовлення: 1000 шт
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| FOD3180TV |
|
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 2; OUT: MOSFET; Uinsul: 5kV; PDIP8; 15kV/μs
Case: PDIP8
Mounting: THT
Insulation voltage: 5kV
Max. off-state voltage: 5V
Type of optocoupler: optocoupler
Number of channels: 2
Manufacturer series: FOD3180
Slew rate: 15kV/μs
Kind of output: MOSFET
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 2; OUT: MOSFET; Uinsul: 5kV; PDIP8; 15kV/μs
Case: PDIP8
Mounting: THT
Insulation voltage: 5kV
Max. off-state voltage: 5V
Type of optocoupler: optocoupler
Number of channels: 2
Manufacturer series: FOD3180
Slew rate: 15kV/μs
Kind of output: MOSFET
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Мінімальне замовлення: 1000 шт
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| NCP1246ALD065R2G |
|
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SO7; flyback
Case: SO7
Mounting: SMD
Output current: 500...800mA
Type of integrated circuit: PMIC
Operating temperature: -40...125°C
Kind of integrated circuit: AC/DC switcher; PWM controller
Number of channels: 1
Frequency: 58...72kHz
Operating voltage: 8.9...26.5V DC
Topology: flyback
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SO7; flyback
Case: SO7
Mounting: SMD
Output current: 500...800mA
Type of integrated circuit: PMIC
Operating temperature: -40...125°C
Kind of integrated circuit: AC/DC switcher; PWM controller
Number of channels: 1
Frequency: 58...72kHz
Operating voltage: 8.9...26.5V DC
Topology: flyback
товару немає в наявності
Мінімальне замовлення: 2500 шт
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од. на суму грн.
| FDMC8321LDC |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 108A; Idm: 320A; 56W; PQFN8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Case: PQFN8
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 60nC
On-state resistance: 4.1mΩ
Power dissipation: 56W
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 108A
Pulsed drain current: 320A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 108A; Idm: 320A; 56W; PQFN8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Case: PQFN8
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 60nC
On-state resistance: 4.1mΩ
Power dissipation: 56W
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 108A
Pulsed drain current: 320A
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| NCP361SNT1G |
|
Виробник: ONSEMI
Category: Drivers - integrated circuits
Description: IC: driver; TSOP5; Ch: 1; Uin: 1.2÷20V; OUT: transistor
Type of integrated circuit: driver
Case: TSOP5
Mounting: SMD
Operating temperature: -40...85°C
Number of channels: 1
Input voltage: 1.2...20V
Application: USB
Threshold on-voltage: 3V
Kind of output: transistor
Category: Drivers - integrated circuits
Description: IC: driver; TSOP5; Ch: 1; Uin: 1.2÷20V; OUT: transistor
Type of integrated circuit: driver
Case: TSOP5
Mounting: SMD
Operating temperature: -40...85°C
Number of channels: 1
Input voltage: 1.2...20V
Application: USB
Threshold on-voltage: 3V
Kind of output: transistor
на замовлення 1567 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 43.89 грн |
| 12+ | 37.02 грн |
| 13+ | 34.30 грн |
| 25+ | 30.22 грн |
| 35+ | 28.02 грн |
| 50+ | 27.34 грн |
| 96+ | 26.49 грн |
| 100+ | 25.47 грн |
| NCP711ASN300T1G |
|
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.1A; TSOP5; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3V
Output current: 0.1A
Case: TSOP5
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.1A; TSOP5; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3V
Output current: 0.1A
Case: TSOP5
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
на замовлення 2000 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 46.63 грн |
| 15+ | 30.14 грн |
| 25+ | 27.85 грн |
| 34+ | 27.76 грн |
| 92+ | 27.59 грн |
| 100+ | 26.57 грн |
| M74VHC1G126DTT1G |
|
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; TSOP5; VHC; 40uA
Type of integrated circuit: digital
Case: TSOP5
Mounting: SMD
Manufacturer series: VHC
Kind of package: reel; tape
Operating temperature: -55...125°C
Number of channels: 1
Quiescent current: 40µA
Kind of integrated circuit: buffer; non-inverting
Supply voltage: 2...5.5V DC
Kind of output: 3-state
Technology: CMOS
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; TSOP5; VHC; 40uA
Type of integrated circuit: digital
Case: TSOP5
Mounting: SMD
Manufacturer series: VHC
Kind of package: reel; tape
Operating temperature: -55...125°C
Number of channels: 1
Quiescent current: 40µA
Kind of integrated circuit: buffer; non-inverting
Supply voltage: 2...5.5V DC
Kind of output: 3-state
Technology: CMOS
на замовлення 1 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 457.16 грн |
| NCP551SN50T1G |
|
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 10mA; TSOP5; SMD; ±2%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.15V
Output voltage: 5V
Output current: 10mA
Case: TSOP5
Mounting: SMD
Manufacturer series: NCP551
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 12V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 10mA; TSOP5; SMD; ±2%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.15V
Output voltage: 5V
Output current: 10mA
Case: TSOP5
Mounting: SMD
Manufacturer series: NCP551
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 12V
на замовлення 3000 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 32.92 грн |
| 20+ | 21.57 грн |
| 25+ | 19.70 грн |
| 96+ | 10.19 грн |
| 263+ | 9.59 грн |
| BD241CG |
|
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 3A; 40W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 40W
Case: TO220AB
Mounting: THT
Kind of package: tube
Frequency: 3MHz
Current gain: 2.5
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 3A; 40W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 40W
Case: TO220AB
Mounting: THT
Kind of package: tube
Frequency: 3MHz
Current gain: 2.5
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| BD787G |
|
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 4A; 15W; TO225
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 4A
Power dissipation: 15W
Case: TO225
Current gain: 40...250
Mounting: THT
Kind of package: bulk
Frequency: 50MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 4A; 15W; TO225
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 4A
Power dissipation: 15W
Case: TO225
Current gain: 40...250
Mounting: THT
Kind of package: bulk
Frequency: 50MHz
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| BCX19LT1G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100...600
Mounting: SMD
Kind of package: reel; tape
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100...600
Mounting: SMD
Kind of package: reel; tape
на замовлення 2790 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 36+ | 12.80 грн |
| 53+ | 8.15 грн |
| 76+ | 5.62 грн |
| 100+ | 4.77 грн |
| 500+ | 3.33 грн |
| 1000+ | 2.88 грн |
| 1500+ | 2.65 грн |
| BCW71 |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.35W; SOT23,TO236AB
Case: SOT23; TO236AB
Mounting: SMD
Collector-emitter voltage: 45V
Power dissipation: 0.35W
Polarisation: bipolar
Type of transistor: NPN
Current gain: 110...220
Kind of package: reel; tape
Frequency: 330MHz
Collector current: 0.5A
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.35W; SOT23,TO236AB
Case: SOT23; TO236AB
Mounting: SMD
Collector-emitter voltage: 45V
Power dissipation: 0.35W
Polarisation: bipolar
Type of transistor: NPN
Current gain: 110...220
Kind of package: reel; tape
Frequency: 330MHz
Collector current: 0.5A
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| FDD86102LZ |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 35A; 54W; DPAK
Mounting: SMD
Power dissipation: 54W
Gate charge: 26nC
Polarisation: unipolar
Technology: PowerTrench®
Drain current: 35A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: DPAK
On-state resistance: 40mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 35A; 54W; DPAK
Mounting: SMD
Power dissipation: 54W
Gate charge: 26nC
Polarisation: unipolar
Technology: PowerTrench®
Drain current: 35A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: DPAK
On-state resistance: 40mΩ
на замовлення 1134 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 157.26 грн |
| 5+ | 115.47 грн |
| 10+ | 101.88 грн |
| 50+ | 74.71 грн |
| 75+ | 69.62 грн |
| 100+ | 65.37 грн |
| 250+ | 56.04 грн |
| 500+ | 55.19 грн |
| MMBD4148se |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT23; Ufmax: 1V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: double series
Capacitance: 4pF
Case: SOT23
Max. forward impulse current: 2A
Power dissipation: 0.35W
Kind of package: reel; tape
Max. forward voltage: 1V
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT23; Ufmax: 1V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: double series
Capacitance: 4pF
Case: SOT23
Max. forward impulse current: 2A
Power dissipation: 0.35W
Kind of package: reel; tape
Max. forward voltage: 1V
на замовлення 5755 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 24+ | 19.20 грн |
| 69+ | 6.20 грн |
| 81+ | 5.30 грн |
| 100+ | 4.97 грн |
| 250+ | 4.58 грн |
| 327+ | 2.98 грн |
| 898+ | 2.82 грн |
| 1500+ | 2.81 грн |
| MMBD4148CA |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT23; Ufmax: 1V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: common anode; double
Capacitance: 4pF
Case: SOT23
Max. forward impulse current: 2A
Power dissipation: 0.35W
Kind of package: reel; tape
Max. forward voltage: 1V
Leakage current: 5µA
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT23; Ufmax: 1V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: common anode; double
Capacitance: 4pF
Case: SOT23
Max. forward impulse current: 2A
Power dissipation: 0.35W
Kind of package: reel; tape
Max. forward voltage: 1V
Leakage current: 5µA
на замовлення 17980 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 34+ | 13.71 грн |
| 52+ | 8.32 грн |
| 79+ | 5.42 грн |
| 100+ | 4.56 грн |
| 253+ | 3.85 грн |
| 500+ | 3.51 грн |
| SMMSD4148T3G |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD123; Ufmax: 1V; Ifsm: 1A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOD123
Max. forward voltage: 1V
Max. forward impulse current: 1A
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD123; Ufmax: 1V; Ifsm: 1A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOD123
Max. forward voltage: 1V
Max. forward impulse current: 1A
Kind of package: reel; tape
Application: automotive industry
товару немає в наявності
Мінімальне замовлення: 10000 шт
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од. на суму грн.
| MC33064P-5G |
|
Виробник: ONSEMI
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); 1÷6.5VDC
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open collector
Active logical level: low
Supply voltage: 1...6.5V DC
Case: TO92
Operating temperature: -40...85°C
Mounting: SMD
DC supply current: 390µA
Maximum output current: 60mA
Threshold on-voltage: 4.59V
Kind of package: bulk
Number of channels: 1
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); 1÷6.5VDC
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open collector
Active logical level: low
Supply voltage: 1...6.5V DC
Case: TO92
Operating temperature: -40...85°C
Mounting: SMD
DC supply current: 390µA
Maximum output current: 60mA
Threshold on-voltage: 4.59V
Kind of package: bulk
Number of channels: 1
на замовлення 386 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 48.46 грн |
| 14+ | 31.84 грн |
| 25+ | 28.53 грн |
| 100+ | 24.96 грн |
| 250+ | 24.79 грн |
| MC34064D-5G |
|
Виробник: ONSEMI
Category: Supervisor circuits
Description: IC: supervisor circuit; open drain; Active logical level: low
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR); voltage detector
Case: SO8
Mounting: SMD
Number of channels: 1
Operating temperature: 0...70°C
Active logical level: low
Threshold on-voltage: 4.61V
Kind of RESET output: open drain
Supply voltage: 6.5V
Category: Supervisor circuits
Description: IC: supervisor circuit; open drain; Active logical level: low
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR); voltage detector
Case: SO8
Mounting: SMD
Number of channels: 1
Operating temperature: 0...70°C
Active logical level: low
Threshold on-voltage: 4.61V
Kind of RESET output: open drain
Supply voltage: 6.5V
товару немає в наявності
В кошику
од. на суму грн.
| BZX85C18 |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 1W; 18V; bulk; DO41; single diode; BZX85C
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 18V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: BZX85C
Kind of package: bulk
Category: THT Zener diodes
Description: Diode: Zener; 1W; 18V; bulk; DO41; single diode; BZX85C
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 18V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: BZX85C
Kind of package: bulk
товару немає в наявності
Мінімальне замовлення: 10 шт
В кошику
од. на суму грн.