| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||||
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| NCP1239QD65R2G | ONSEMI |
Category: Voltage regulators - DC/DC circuitsDescription: IC: PMIC; AC/DC switcher,PWM controller; SO7; flyback Type of integrated circuit: PMIC Kind of integrated circuit: AC/DC switcher; PWM controller Output current: -0.5...0.5A Frequency: 60...70kHz Mounting: SMD Case: SO7 Topology: flyback Number of channels: 1 Operating temperature: -40...125°C Operating voltage: 8.8...25.5V DC |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||||||||||||
| FUSB15200MNTWG | ONSEMI |
Category: Battery and battery cells controllersDescription: IC: interface; QFN40; 3÷5.5V; 24MHz; Interface: I2C Type of integrated circuit: interface Mounting: SMD DC supply current: 330µA Case: QFN40 Operating temperature: -40...85°C Supply voltage: 3...5.5V Frequency: 24MHz Interface: I2C Application: for controller; USB |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | |||||||||||||||||||
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NC7SP14P5X | ONSEMI |
Category: Gates, invertersDescription: IC: digital; NOT; Ch: 1; IN: 1; SMD; SC70-5; 0.9÷3.6VDC; -40÷85°C Operating temperature: -40...85°C Mounting: SMD Kind of input: with Schmitt trigger Kind of package: reel; tape Quiescent current: 0.9µA Supply voltage: 0.9...3.6V DC Number of inputs: 1 Kind of gate: NOT Number of channels: single; 1 Type of integrated circuit: digital Case: SC70-5 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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FDD8876 | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 73A; 70W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 73A Power dissipation: 70W Case: DPAK Gate-source voltage: ±20V On-state resistance: 13mΩ Mounting: SMD Gate charge: 47nC Kind of package: reel; tape Kind of channel: enhancement Technology: PowerTrench® |
на замовлення 2015 шт: термін постачання 14-30 дні (днів) |
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MPSA29 | ONSEMI |
Category: NPN THT Darlington transistorsDescription: Transistor: NPN; bipolar; Darlington; 100V; 0.8A; 0.625W; TO92 Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 100V Collector current: 0.8A Power dissipation: 0.625W Case: TO92 Current gain: 10k Mounting: THT Kind of package: bulk Frequency: 125MHz |
товару немає в наявності |
Мінімальне замовлення: 3 шт В кошику од. на суму грн. | ||||||||||||||||||
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TIP112G | ONSEMI |
Category: NPN THT Darlington transistorsDescription: Transistor: NPN; bipolar; Darlington; 100V; 2A; 2W; TO220AB Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 100V Collector current: 2A Case: TO220AB Mounting: THT Kind of package: tube Power dissipation: 2W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| 2SD1623S-TD-E | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 50V; 2A; 0.5W; SOT89 Case: SOT89 Mounting: SMD Type of transistor: NPN Power dissipation: 0.5W Collector current: 2A Collector-emitter voltage: 50V Current gain: 140...280 Frequency: 150MHz Kind of package: reel; tape Polarisation: bipolar |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| 2SD1620-TD-E | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 10V; 3A; 0.5W; SOT89 Case: SOT89 Mounting: SMD Type of transistor: NPN Power dissipation: 0.5W Collector current: 3A Collector-emitter voltage: 10V Current gain: 140 Frequency: 200MHz Kind of package: reel; tape Polarisation: bipolar |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| 2SD1623T-TD-E | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 50V; 2A; 0.5W; SOT89 Case: SOT89 Mounting: SMD Type of transistor: NPN Power dissipation: 0.5W Collector current: 2A Collector-emitter voltage: 50V Current gain: 200...400 Frequency: 150MHz Kind of package: reel; tape Polarisation: bipolar |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| 2SD1628G-TD-E | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 20V; 5A; 0.5W; SOT89 Case: SOT89 Mounting: SMD Type of transistor: NPN Power dissipation: 0.5W Collector current: 5A Collector-emitter voltage: 20V Current gain: 280...560 Frequency: 120MHz Kind of package: reel; tape Polarisation: bipolar |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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BD244C | ONSEMI |
Category: PNP THT transistorsDescription: Transistor: PNP; bipolar; 100V; 6A; 65W; TO220 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 6A Case: TO220 Mounting: THT Frequency: 3MHz Power: 65W |
товару немає в наявності |
Мінімальне замовлення: 3 шт В кошику од. на суму грн. | ||||||||||||||||||
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BD244C | ONSEMI |
Category: PNP THT transistorsDescription: Transistor: PNP; bipolar; 100V; 6A; 65W; TO220AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 6A Power dissipation: 65W Case: TO220AB Mounting: THT Kind of package: tube |
товару немає в наявності |
Мінімальне замовлення: 3 шт В кошику од. на суму грн. | ||||||||||||||||||
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SMUN5113DW1T1G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.25W; R1: 47kΩ; R2: 47kΩ Collector-emitter voltage: 50V Base resistor: 47kΩ Power dissipation: 0.25W Polarisation: bipolar Kind of transistor: BRT Application: automotive industry Type of transistor: PNP x2 Kind of package: reel; tape Base-emitter resistor: 47kΩ Case: SC70-6; SC88; SOT363 Collector current: 0.1A Mounting: SMD |
на замовлення 2354 шт: термін постачання 14-30 дні (днів) |
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MMBTH10LT1G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; RF; 25V; 225/300mW; SOT23 Type of transistor: NPN Polarisation: bipolar Kind of transistor: RF Collector-emitter voltage: 25V Power dissipation: 0.225/0.3W Case: SOT23 Mounting: SMD Kind of package: reel; tape Frequency: 650MHz Current gain: 60...240 |
на замовлення 1286 шт: термін постачання 14-30 дні (днів) |
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| MMBTH10-4LT1G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; RF; 25V; 0.3W; SOT23 Type of transistor: NPN Polarisation: bipolar Kind of transistor: RF Collector-emitter voltage: 25V Power dissipation: 0.3W Case: SOT23 Mounting: SMD Kind of package: reel; tape Frequency: 800MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| MMBTH10M3T5G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; RF; 25V; 0.64W; SOT723 Type of transistor: NPN Polarisation: bipolar Kind of transistor: RF Collector-emitter voltage: 25V Power dissipation: 0.64W Case: SOT723 Mounting: SMD Kind of package: reel; tape Frequency: 650MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NSVMMBTH10LT1G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; RF; 25V; 0.3W; SOT23; automotive industry Type of transistor: NPN Polarisation: bipolar Kind of transistor: RF Collector-emitter voltage: 25V Power dissipation: 0.3W Case: SOT23 Mounting: SMD Kind of package: reel; tape Frequency: 650MHz Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NSVBSS63LT1G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 100V; 0.1A; 0.225W; SOT23,TO236AB Mounting: SMD Frequency: 50MHz Application: automotive industry Polarisation: bipolar Type of transistor: PNP Case: SOT23; TO236AB Collector current: 0.1A Power dissipation: 0.225W Current gain: 30 Collector-emitter voltage: 100V Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NSVBAS16W1T1G | ONSEMI |
Category: SMD universal diodesDescription: Diode: switching; SMD; 100V; 0.2A; 3ns; SC88; Ufmax: 1.2V; reel,tape Type of diode: switching Mounting: SMD Max. off-state voltage: 0.1kV Load current: 0.2A Reverse recovery time: 3ns Semiconductor structure: triple independent Case: SC88 Max. forward voltage: 1.2V Kind of package: reel; tape Application: automotive industry Features of semiconductor devices: small signal |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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NCP3065DR2G | ONSEMI |
Category: Voltage regulators - DC/DC circuitsDescription: PMIC; DC/DC converter,LED driver; Uin: 3÷40VDC; 1.5A; SO8; SMD Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter; LED driver Input voltage: 3...40V DC Output current: 1.5A Case: SO8 Mounting: SMD Topology: boost; buck; buck-boost Operating temperature: -40...125°C Kind of package: reel; tape Number of channels: 1 Operating voltage: 3...40V DC Frequency: 110...190kHz |
на замовлення 1677 шт: термін постачання 14-30 дні (днів) |
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MBR130T1G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SOD123; SMD; 30V; 1A; reel,tape Type of diode: Schottky rectifying Case: SOD123 Mounting: SMD Max. off-state voltage: 30V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.47V Max. forward impulse current: 5.5A Kind of package: reel; tape |
на замовлення 4660 шт: термін постачання 14-30 дні (днів) |
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MURB1620CTT4G | ONSEMI |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 200V; 8Ax2; 35ns; D2PAK; Ufmax: 895mV Mounting: SMD Max. forward impulse current: 100A Max. forward voltage: 0.895V Features of semiconductor devices: ultrafast switching Max. off-state voltage: 200V Load current: 8A x2 Max. load current: 16A Kind of package: reel; tape Semiconductor structure: common cathode; double Case: D2PAK Type of diode: rectifying Reverse recovery time: 35ns |
на замовлення 640 шт: термін постачання 14-30 дні (днів) |
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MURF1620CTG | ONSEMI |
Category: THT universal diodesDescription: Diode: rectifying; THT; 200V; 16A; tube; Ifsm: 100A; TO220FP; 25ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 16A Semiconductor structure: common cathode; double Case: TO220FP Reverse recovery time: 25ns Max. forward impulse current: 100A Kind of package: tube |
на замовлення 86 шт: термін постачання 14-30 дні (днів) |
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MURB1620CTRT4G | ONSEMI |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 200V; 16A; 85ns; D2PAK; Ufmax: 1.2V Mounting: SMD Max. forward voltage: 1.2V Max. off-state voltage: 200V Load current: 16A Kind of package: reel; tape Semiconductor structure: common anode; double Case: D2PAK Type of diode: rectifying Reverse recovery time: 85ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NRVUB1620CTT4G | ONSEMI |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 200V; 8Ax2; 35ns; D2PAK; Ufmax: 0.895V Mounting: SMD Max. forward impulse current: 100A Max. forward voltage: 0.895V Application: automotive industry Max. off-state voltage: 200V Load current: 8A x2 Max. load current: 16A Kind of package: reel; tape Semiconductor structure: common cathode; double Case: D2PAK Type of diode: rectifying Reverse recovery time: 35ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NRVUB1620CTRT4G | ONSEMI |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 200V; 8Ax2; 85ns; D2PAK; Ufmax: 1.2V Mounting: SMD Max. forward impulse current: 100A Max. forward voltage: 1.2V Application: automotive industry Max. off-state voltage: 200V Load current: 8A x2 Max. load current: 16A Kind of package: reel; tape Semiconductor structure: common anode; double Case: D2PAK Type of diode: rectifying Reverse recovery time: 85ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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1SMA5931BT3G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 1.5W; 18V; SMD; SMA; reel,tape; single diode Type of diode: Zener Power dissipation: 1.5W Zener voltage: 18V Mounting: SMD Tolerance: ±5% Case: SMA Kind of package: reel; tape Semiconductor structure: single diode Manufacturer series: 1SMA59xxBT3G |
на замовлення 4870 шт: термін постачання 14-30 дні (днів) |
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SZ1SMA5931BT3G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 1.5W; 18V; SMD; SMA; reel,tape; single diode Type of diode: Zener Power dissipation: 1.5W Zener voltage: 18V Mounting: SMD Tolerance: ±5% Case: SMA Kind of package: reel; tape Semiconductor structure: single diode Manufacturer series: 1SMA59xxBT3G Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MUN2211T1G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.23W; SC59; R1: 10kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.23W Case: SC59 Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Base-emitter resistor: 10kΩ Current gain: 35...60 |
на замовлення 21270 шт: термін постачання 14-30 дні (днів) |
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| FCH060N80-F155 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 800V; 36.8A; Idm: 174A; 500W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 36.8A Pulsed drain current: 174A Power dissipation: 500W Case: TO247 Gate-source voltage: ±20V On-state resistance: 54mΩ Mounting: THT Gate charge: 0.27µC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NTHL082N65S3HF | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 40A; Idm: 100A; 313W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 40A Pulsed drain current: 100A Power dissipation: 313W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 82mΩ Mounting: THT Gate charge: 79nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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NCP1076BAP065G | ONSEMI |
Category: Voltage regulators - DC/DC circuitsDescription: IC: PMIC; AC/DC switcher,PWM controller; DIP8; flyback; 6.5÷20VDC Type of integrated circuit: PMIC Kind of integrated circuit: AC/DC switcher; PWM controller Output current: 0.65A Frequency: 59...71kHz Mounting: SMD Case: DIP8 Topology: flyback Number of channels: 1 Operating temperature: -40...125°C On-state resistance: 6.8Ω Operating voltage: 6.5...20V DC |
на замовлення 195 шт: термін постачання 14-30 дні (днів) |
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ESD7351XV2T1G | ONSEMI |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; ESD; 0.15W; 5V; SOD523; reel,tape; 0.43÷0.6pF Type of diode: TVS Version: ESD Peak pulse power dissipation: 0.15W Max. off-state voltage: 3.3V Breakdown voltage: 5V Case: SOD523 Mounting: SMD Leakage current: 1nA Kind of package: reel; tape Capacitance: 0.43...0.6pF |
на замовлення 5751 шт: термін постачання 14-30 дні (днів) |
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ESD7551N2T5G | ONSEMI |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; ESD; 0.25W; 5V; CASE714AB,X2DFN2; reel,tape Type of diode: TVS Version: ESD Max. off-state voltage: 3.3V Breakdown voltage: 5V Mounting: SMD Leakage current: 50nA Kind of package: reel; tape Capacitance: 0.22...0.35pF Peak pulse power dissipation: 0.25W Case: CASE714AB; X2DFN2 |
на замовлення 321 шт: термін постачання 14-30 дні (днів) |
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MMBZ5V6ALT1G | ONSEMI |
Category: Protection diodes - arraysDescription: Diode: TVS array; 5.6V; 3A; 24W; double,common anode; SOT23; Ch: 2 Version: ESD Mounting: SMD Case: SOT23 Type of diode: TVS array Tolerance: ±5% Leakage current: 5µA Number of channels: 2 Max. forward impulse current: 3A Max. off-state voltage: 3V Breakdown voltage: 5.6V Peak pulse power dissipation: 24W Kind of package: reel; tape Semiconductor structure: common anode; double |
на замовлення 7222 шт: термін постачання 14-30 дні (днів) |
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MMQA5V6T1G | ONSEMI |
Category: Protection diodes - arraysDescription: Diode: TVS array; 5.6V; quadruple,common anode; SC74-6; Ch: 4; ±5% Version: ESD Mounting: SMD Case: SC74-6 Type of diode: TVS array Tolerance: ±5% Number of channels: 4 Max. off-state voltage: 3V Breakdown voltage: 5.6V Kind of package: reel; tape Semiconductor structure: common anode; quadruple |
на замовлення 1485 шт: термін постачання 14-30 дні (днів) |
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NTP360N80S3Z | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 800V; 13A; Idm: 32.5A; 96W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 13A Pulsed drain current: 32.5A Power dissipation: 96W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 0.36Ω Mounting: THT Gate charge: 25.3nC Kind of package: tube Kind of channel: enhancement |
на замовлення 50 шт: термін постачання 14-30 дні (днів) |
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| MM3Z4V7B | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 0.2W; 4.7V; SMD; reel,tape; SOD323F; single diode Type of diode: Zener Power dissipation: 0.2W Zener voltage: 4.7V Mounting: SMD Tolerance: ±2% Kind of package: reel; tape Case: SOD323F Semiconductor structure: single diode Manufacturer series: MM3ZxxB |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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2SC3647S-TD-E | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 100V; 2A; 1.5W; SOT89 Mounting: SMD Collector-emitter voltage: 100V Power dissipation: 1.5W Polarisation: bipolar Type of transistor: NPN Current gain: 140...280 Kind of package: reel; tape Case: SOT89 Frequency: 120MHz Collector current: 2A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MCT62 | ONSEMI |
Category: Optocouplers - analog outputDescription: Optocoupler; THT; Ch: 2; OUT: transistor; Uinsul: 5.3kV; Uce: 85V Mounting: THT Insulation voltage: 5.3kV Type of optocoupler: optocoupler Case: DIP8 Number of channels: 2 Collector-emitter voltage: 85V CTR@If: 100%@5mA Kind of output: transistor |
на замовлення 2514 шт: термін постачання 14-30 дні (днів) |
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MCT62S | ONSEMI |
Category: Optocouplers - analog outputDescription: Optocoupler; SMD; Ch: 2; OUT: transistor; Uinsul: 5.3kV; Uce: 85V Mounting: SMD Insulation voltage: 5.3kV Type of optocoupler: optocoupler Case: Gull wing 8 Number of channels: 2 Collector-emitter voltage: 85V CTR@If: 100%@5mA Kind of output: transistor |
на замовлення 37 шт: термін постачання 14-30 дні (днів) |
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MCT62SD | ONSEMI |
Category: Optocouplers - analog outputDescription: Optocoupler; SMD; Ch: 2; OUT: transistor; Uinsul: 5kV; Uce: 85V; DIP8 Manufacturer series: MCT62 Mounting: SMD Insulation voltage: 5kV Max. off-state voltage: 3V Type of optocoupler: optocoupler Turn-on time: 3µs Case: DIP8 Turn-off time: 3µs Number of channels: 2 Collector-emitter voltage: 85V CTR@If: 100%@5mA Kind of output: transistor |
на замовлення 952 шт: термін постачання 14-30 дні (днів) |
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| MCT623SD | ONSEMI |
Category: Optocouplers - analog outputDescription: Optocoupler; SMD; Ch: 2; OUT: transistor; Uinsul: 5kV; Uce: 85V; DIP8 Manufacturer series: MCT62 Mounting: SMD Insulation voltage: 5kV Max. off-state voltage: 3V Type of optocoupler: optocoupler Turn-on time: 3µs Case: DIP8 Turn-off time: 3µs Number of channels: 2 Collector-emitter voltage: 85V CTR@If: 100%@5mA Kind of output: transistor |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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FDN339AN | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 3A; 0.5W; SuperSOT-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 3A Power dissipation: 0.5W Case: SuperSOT-3 Gate-source voltage: ±8V On-state resistance: 61mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Features of semiconductor devices: logic level Technology: PowerTrench® Gate charge: 10nC |
на замовлення 2220 шт: термін постачання 14-30 дні (днів) |
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NDS355AN | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 1.7A; 0.5W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 1.7A Power dissipation: 0.5W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 0.23Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Features of semiconductor devices: logic level Gate charge: 5nC |
на замовлення 242 шт: термін постачання 14-30 дні (днів) |
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MC74VHCT50ADTR2G | ONSEMI |
Category: Buffers, transceivers, driversDescription: IC: digital; buffer,non-inverting; Ch: 6; CMOS,TTL; SMD; TSSOP14 Mounting: SMD Supply voltage: 2...5.5V DC Manufacturer series: VHCT Type of integrated circuit: digital Operating temperature: -40...125°C Technology: CMOS; TTL Case: TSSOP14 Kind of integrated circuit: buffer; non-inverting Number of channels: 6 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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4N27M | ONSEMI |
Category: Optocouplers - analog outputDescription: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 7.5kV; Uce: 30V Number of channels: 1 CTR@If: 10%@10mA Collector-emitter voltage: 30V Insulation voltage: 7.5kV Case: DIP6 Type of optocoupler: optocoupler Mounting: THT Kind of output: transistor Turn-on time: 2µs Turn-off time: 2µs |
на замовлення 629 шт: термін постачання 14-30 дні (днів) |
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| NCV8664ST50T3G | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 5V; 0.15A; SOT223; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Output voltage: 5V Output current: 0.15A Case: SOT223 Mounting: SMD Kind of package: reel; tape Number of channels: 1 Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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MM3Z5V1ST1G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 0.5W; 5.1V; SMD; SOD323; reel,tape; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 5.1V Kind of package: reel; tape Case: SOD323 Mounting: SMD Tolerance: ±2% Semiconductor structure: single diode Manufacturer series: MM3ZxxST1G |
на замовлення 1112 шт: термін постачання 14-30 дні (днів) |
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MM3Z5V1B | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 0.2W; 5.1V; SMD; SOD323F; reel,tape; single diode Type of diode: Zener Power dissipation: 0.2W Zener voltage: 5.1V Mounting: SMD Tolerance: ±2% Case: SOD323F Kind of package: reel; tape Semiconductor structure: single diode Manufacturer series: MM3ZxxB |
на замовлення 1061 шт: термін постачання 14-30 дні (днів) |
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BZX84B5V1LT1G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 0.3W; 5.1V; SMD; SOT23; reel,tape; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 5.1V Mounting: SMD Tolerance: ±2% Case: SOT23 Kind of package: reel; tape Semiconductor structure: single diode Manufacturer series: BZX84B |
на замовлення 108 шт: термін постачання 14-30 дні (днів) |
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| 1N5231C | ONSEMI |
Category: THT Zener diodesDescription: Diode: Zener; 0.5W; 5.1V; bulk; DO35; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 5.1V Kind of package: bulk Case: DO35 Mounting: THT Tolerance: ±2% Semiconductor structure: single diode |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| 1N5231CTR | ONSEMI |
Category: THT Zener diodesDescription: Diode: Zener; 0.5W; 5.1V; reel,tape; DO35; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 5.1V Kind of package: reel; tape Case: DO35 Mounting: THT Tolerance: ±2% Semiconductor structure: single diode |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| SS32 | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMC; SMD; 20V; 3A; reel,tape Mounting: SMD Kind of package: reel; tape Max. forward voltage: 0.5V Load current: 3A Max. off-state voltage: 20V Max. forward impulse current: 100A Case: SMC Type of diode: Schottky rectifying Semiconductor structure: single diode |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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MUN5235DW1T1G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.187W; R1: 2.2kΩ Type of transistor: NPN x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.187W Case: SC70-6; SC88; SOT363 Mounting: SMD Kind of package: reel; tape Base resistor: 2.2kΩ Base-emitter resistor: 47kΩ Current gain: 140 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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SMUN5235DW1T1G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; R1: 2.2kΩ Type of transistor: NPN x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.25W Case: SC70-6; SC88; SOT363 Mounting: SMD Kind of package: reel; tape Base resistor: 2.2kΩ Application: automotive industry Base-emitter resistor: 47kΩ |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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SMUN5235DW1T3G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; R1: 2.2kΩ Type of transistor: NPN x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.25W Case: SC70-6; SC88; SOT363 Mounting: SMD Kind of package: reel; tape Base resistor: 2.2kΩ Application: automotive industry Base-emitter resistor: 47kΩ |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||||||
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SBRS8190NT3G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMB; SMD; 90V; 2A; reel,tape Type of diode: Schottky rectifying Case: SMB Mounting: SMD Max. off-state voltage: 90V Load current: 2A Semiconductor structure: single diode Max. forward voltage: 0.75V Max. forward impulse current: 50A Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| SS28 | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMB; SMD; 80V; 2A; reel,tape Type of diode: Schottky rectifying Case: SMB Mounting: SMD Max. off-state voltage: 80V Load current: 2A Semiconductor structure: single diode Max. forward voltage: 0.85V Max. forward impulse current: 50A Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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UF3C065080K4S | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-JFET / N-MOSFET; SiC; unipolar; cascode; 650V; 23A Technology: SiC Mounting: THT Case: TO247-4 Kind of package: tube Gate charge: 43nC On-state resistance: 80mΩ Drain current: 23A Gate-source voltage: ±25V Power dissipation: 190W Pulsed drain current: 65A Drain-source voltage: 650V Kind of channel: enhancement Version: ESD Type of transistor: N-JFET / N-MOSFET Features of semiconductor devices: Kelvin terminal Kind of transistor: cascode Polarisation: unipolar |
товару немає в наявності |
В кошику од. на суму грн. |
| NCP1239QD65R2G |
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Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SO7; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: -0.5...0.5A
Frequency: 60...70kHz
Mounting: SMD
Case: SO7
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 8.8...25.5V DC
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SO7; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: -0.5...0.5A
Frequency: 60...70kHz
Mounting: SMD
Case: SO7
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 8.8...25.5V DC
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| FUSB15200MNTWG |
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Виробник: ONSEMI
Category: Battery and battery cells controllers
Description: IC: interface; QFN40; 3÷5.5V; 24MHz; Interface: I2C
Type of integrated circuit: interface
Mounting: SMD
DC supply current: 330µA
Case: QFN40
Operating temperature: -40...85°C
Supply voltage: 3...5.5V
Frequency: 24MHz
Interface: I2C
Application: for controller; USB
Category: Battery and battery cells controllers
Description: IC: interface; QFN40; 3÷5.5V; 24MHz; Interface: I2C
Type of integrated circuit: interface
Mounting: SMD
DC supply current: 330µA
Case: QFN40
Operating temperature: -40...85°C
Supply voltage: 3...5.5V
Frequency: 24MHz
Interface: I2C
Application: for controller; USB
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| NC7SP14P5X |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 1; IN: 1; SMD; SC70-5; 0.9÷3.6VDC; -40÷85°C
Operating temperature: -40...85°C
Mounting: SMD
Kind of input: with Schmitt trigger
Kind of package: reel; tape
Quiescent current: 0.9µA
Supply voltage: 0.9...3.6V DC
Number of inputs: 1
Kind of gate: NOT
Number of channels: single; 1
Type of integrated circuit: digital
Case: SC70-5
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 1; IN: 1; SMD; SC70-5; 0.9÷3.6VDC; -40÷85°C
Operating temperature: -40...85°C
Mounting: SMD
Kind of input: with Schmitt trigger
Kind of package: reel; tape
Quiescent current: 0.9µA
Supply voltage: 0.9...3.6V DC
Number of inputs: 1
Kind of gate: NOT
Number of channels: single; 1
Type of integrated circuit: digital
Case: SC70-5
товару немає в наявності
В кошику
од. на суму грн.
| FDD8876 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 73A; 70W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 73A
Power dissipation: 70W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: SMD
Gate charge: 47nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 73A; 70W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 73A
Power dissipation: 70W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: SMD
Gate charge: 47nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
на замовлення 2015 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 64.75 грн |
| 8+ | 56.83 грн |
| 25+ | 53.53 грн |
| 100+ | 51.89 грн |
| MPSA29 |
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Виробник: ONSEMI
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 0.8A; 0.625W; TO92
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 0.8A
Power dissipation: 0.625W
Case: TO92
Current gain: 10k
Mounting: THT
Kind of package: bulk
Frequency: 125MHz
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 0.8A; 0.625W; TO92
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 0.8A
Power dissipation: 0.625W
Case: TO92
Current gain: 10k
Mounting: THT
Kind of package: bulk
Frequency: 125MHz
товару немає в наявності
Мінімальне замовлення: 3 шт
В кошику
од. на суму грн.
| TIP112G |
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Виробник: ONSEMI
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 2A; 2W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 2A
Case: TO220AB
Mounting: THT
Kind of package: tube
Power dissipation: 2W
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 2A; 2W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 2A
Case: TO220AB
Mounting: THT
Kind of package: tube
Power dissipation: 2W
товару немає в наявності
В кошику
од. на суму грн.
| 2SD1623S-TD-E |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 2A; 0.5W; SOT89
Case: SOT89
Mounting: SMD
Type of transistor: NPN
Power dissipation: 0.5W
Collector current: 2A
Collector-emitter voltage: 50V
Current gain: 140...280
Frequency: 150MHz
Kind of package: reel; tape
Polarisation: bipolar
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 2A; 0.5W; SOT89
Case: SOT89
Mounting: SMD
Type of transistor: NPN
Power dissipation: 0.5W
Collector current: 2A
Collector-emitter voltage: 50V
Current gain: 140...280
Frequency: 150MHz
Kind of package: reel; tape
Polarisation: bipolar
товару немає в наявності
В кошику
од. на суму грн.
| 2SD1620-TD-E |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 10V; 3A; 0.5W; SOT89
Case: SOT89
Mounting: SMD
Type of transistor: NPN
Power dissipation: 0.5W
Collector current: 3A
Collector-emitter voltage: 10V
Current gain: 140
Frequency: 200MHz
Kind of package: reel; tape
Polarisation: bipolar
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 10V; 3A; 0.5W; SOT89
Case: SOT89
Mounting: SMD
Type of transistor: NPN
Power dissipation: 0.5W
Collector current: 3A
Collector-emitter voltage: 10V
Current gain: 140
Frequency: 200MHz
Kind of package: reel; tape
Polarisation: bipolar
товару немає в наявності
В кошику
од. на суму грн.
| 2SD1623T-TD-E |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 2A; 0.5W; SOT89
Case: SOT89
Mounting: SMD
Type of transistor: NPN
Power dissipation: 0.5W
Collector current: 2A
Collector-emitter voltage: 50V
Current gain: 200...400
Frequency: 150MHz
Kind of package: reel; tape
Polarisation: bipolar
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 2A; 0.5W; SOT89
Case: SOT89
Mounting: SMD
Type of transistor: NPN
Power dissipation: 0.5W
Collector current: 2A
Collector-emitter voltage: 50V
Current gain: 200...400
Frequency: 150MHz
Kind of package: reel; tape
Polarisation: bipolar
товару немає в наявності
В кошику
од. на суму грн.
| 2SD1628G-TD-E |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 20V; 5A; 0.5W; SOT89
Case: SOT89
Mounting: SMD
Type of transistor: NPN
Power dissipation: 0.5W
Collector current: 5A
Collector-emitter voltage: 20V
Current gain: 280...560
Frequency: 120MHz
Kind of package: reel; tape
Polarisation: bipolar
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 20V; 5A; 0.5W; SOT89
Case: SOT89
Mounting: SMD
Type of transistor: NPN
Power dissipation: 0.5W
Collector current: 5A
Collector-emitter voltage: 20V
Current gain: 280...560
Frequency: 120MHz
Kind of package: reel; tape
Polarisation: bipolar
товару немає в наявності
В кошику
од. на суму грн.
| BD244C |
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Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 100V; 6A; 65W; TO220
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 6A
Case: TO220
Mounting: THT
Frequency: 3MHz
Power: 65W
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 100V; 6A; 65W; TO220
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 6A
Case: TO220
Mounting: THT
Frequency: 3MHz
Power: 65W
товару немає в наявності
Мінімальне замовлення: 3 шт
В кошику
од. на суму грн.
| BD244C |
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Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 100V; 6A; 65W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 6A
Power dissipation: 65W
Case: TO220AB
Mounting: THT
Kind of package: tube
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 100V; 6A; 65W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 6A
Power dissipation: 65W
Case: TO220AB
Mounting: THT
Kind of package: tube
товару немає в наявності
Мінімальне замовлення: 3 шт
В кошику
од. на суму грн.
| SMUN5113DW1T1G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.25W; R1: 47kΩ; R2: 47kΩ
Collector-emitter voltage: 50V
Base resistor: 47kΩ
Power dissipation: 0.25W
Polarisation: bipolar
Kind of transistor: BRT
Application: automotive industry
Type of transistor: PNP x2
Kind of package: reel; tape
Base-emitter resistor: 47kΩ
Case: SC70-6; SC88; SOT363
Collector current: 0.1A
Mounting: SMD
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.25W; R1: 47kΩ; R2: 47kΩ
Collector-emitter voltage: 50V
Base resistor: 47kΩ
Power dissipation: 0.25W
Polarisation: bipolar
Kind of transistor: BRT
Application: automotive industry
Type of transistor: PNP x2
Kind of package: reel; tape
Base-emitter resistor: 47kΩ
Case: SC70-6; SC88; SOT363
Collector current: 0.1A
Mounting: SMD
на замовлення 2354 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 24+ | 18.63 грн |
| 32+ | 13.18 грн |
| 37+ | 11.20 грн |
| 100+ | 6.26 грн |
| 500+ | 4.48 грн |
| 1000+ | 3.99 грн |
| MMBTH10LT1G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 25V; 225/300mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 25V
Power dissipation: 0.225/0.3W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 650MHz
Current gain: 60...240
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 25V; 225/300mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 25V
Power dissipation: 0.225/0.3W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 650MHz
Current gain: 60...240
на замовлення 1286 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 72+ | 6.21 грн |
| 81+ | 5.11 грн |
| 95+ | 4.36 грн |
| 127+ | 3.26 грн |
| 160+ | 2.59 грн |
| 174+ | 2.37 грн |
| MMBTH10-4LT1G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 25V; 0.3W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 25V
Power dissipation: 0.3W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 800MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 25V; 0.3W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 25V
Power dissipation: 0.3W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 800MHz
товару немає в наявності
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од. на суму грн.
| MMBTH10M3T5G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 25V; 0.64W; SOT723
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 25V
Power dissipation: 0.64W
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Frequency: 650MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 25V; 0.64W; SOT723
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 25V
Power dissipation: 0.64W
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Frequency: 650MHz
товару немає в наявності
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од. на суму грн.
| NSVMMBTH10LT1G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 25V; 0.3W; SOT23; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 25V
Power dissipation: 0.3W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 650MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 25V; 0.3W; SOT23; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 25V
Power dissipation: 0.3W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 650MHz
Application: automotive industry
товару немає в наявності
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од. на суму грн.
| NSVBSS63LT1G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 0.1A; 0.225W; SOT23,TO236AB
Mounting: SMD
Frequency: 50MHz
Application: automotive industry
Polarisation: bipolar
Type of transistor: PNP
Case: SOT23; TO236AB
Collector current: 0.1A
Power dissipation: 0.225W
Current gain: 30
Collector-emitter voltage: 100V
Kind of package: reel; tape
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 0.1A; 0.225W; SOT23,TO236AB
Mounting: SMD
Frequency: 50MHz
Application: automotive industry
Polarisation: bipolar
Type of transistor: PNP
Case: SOT23; TO236AB
Collector current: 0.1A
Power dissipation: 0.225W
Current gain: 30
Collector-emitter voltage: 100V
Kind of package: reel; tape
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| NSVBAS16W1T1G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 3ns; SC88; Ufmax: 1.2V; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 3ns
Semiconductor structure: triple independent
Case: SC88
Max. forward voltage: 1.2V
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 3ns; SC88; Ufmax: 1.2V; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 3ns
Semiconductor structure: triple independent
Case: SC88
Max. forward voltage: 1.2V
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
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| NCP3065DR2G |
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Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter,LED driver; Uin: 3÷40VDC; 1.5A; SO8; SMD
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter; LED driver
Input voltage: 3...40V DC
Output current: 1.5A
Case: SO8
Mounting: SMD
Topology: boost; buck; buck-boost
Operating temperature: -40...125°C
Kind of package: reel; tape
Number of channels: 1
Operating voltage: 3...40V DC
Frequency: 110...190kHz
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter,LED driver; Uin: 3÷40VDC; 1.5A; SO8; SMD
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter; LED driver
Input voltage: 3...40V DC
Output current: 1.5A
Case: SO8
Mounting: SMD
Topology: boost; buck; buck-boost
Operating temperature: -40...125°C
Kind of package: reel; tape
Number of channels: 1
Operating voltage: 3...40V DC
Frequency: 110...190kHz
на замовлення 1677 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 107.32 грн |
| 10+ | 73.30 грн |
| 25+ | 67.53 грн |
| 50+ | 65.06 грн |
| 100+ | 62.59 грн |
| MBR130T1G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123; SMD; 30V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123
Mounting: SMD
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.47V
Max. forward impulse current: 5.5A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123; SMD; 30V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123
Mounting: SMD
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.47V
Max. forward impulse current: 5.5A
Kind of package: reel; tape
на замовлення 4660 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 36+ | 12.42 грн |
| 42+ | 9.88 грн |
| 46+ | 9.06 грн |
| 59+ | 7.03 грн |
| 100+ | 6.24 грн |
| 500+ | 4.87 грн |
| 1000+ | 4.43 грн |
| 1500+ | 4.22 грн |
| 3000+ | 3.91 грн |
| MURB1620CTT4G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 8Ax2; 35ns; D2PAK; Ufmax: 895mV
Mounting: SMD
Max. forward impulse current: 100A
Max. forward voltage: 0.895V
Features of semiconductor devices: ultrafast switching
Max. off-state voltage: 200V
Load current: 8A x2
Max. load current: 16A
Kind of package: reel; tape
Semiconductor structure: common cathode; double
Case: D2PAK
Type of diode: rectifying
Reverse recovery time: 35ns
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 8Ax2; 35ns; D2PAK; Ufmax: 895mV
Mounting: SMD
Max. forward impulse current: 100A
Max. forward voltage: 0.895V
Features of semiconductor devices: ultrafast switching
Max. off-state voltage: 200V
Load current: 8A x2
Max. load current: 16A
Kind of package: reel; tape
Semiconductor structure: common cathode; double
Case: D2PAK
Type of diode: rectifying
Reverse recovery time: 35ns
на замовлення 640 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 117.08 грн |
| 5+ | 102.12 грн |
| 10+ | 81.53 грн |
| 20+ | 72.48 грн |
| 50+ | 63.42 грн |
| 100+ | 58.47 грн |
| MURF1620CTG |
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Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 16A; tube; Ifsm: 100A; TO220FP; 25ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 16A
Semiconductor structure: common cathode; double
Case: TO220FP
Reverse recovery time: 25ns
Max. forward impulse current: 100A
Kind of package: tube
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 16A; tube; Ifsm: 100A; TO220FP; 25ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 16A
Semiconductor structure: common cathode; double
Case: TO220FP
Reverse recovery time: 25ns
Max. forward impulse current: 100A
Kind of package: tube
на замовлення 86 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 138.36 грн |
| 5+ | 100.48 грн |
| 10+ | 88.95 грн |
| 25+ | 75.77 грн |
| 50+ | 68.36 грн |
| MURB1620CTRT4G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 16A; 85ns; D2PAK; Ufmax: 1.2V
Mounting: SMD
Max. forward voltage: 1.2V
Max. off-state voltage: 200V
Load current: 16A
Kind of package: reel; tape
Semiconductor structure: common anode; double
Case: D2PAK
Type of diode: rectifying
Reverse recovery time: 85ns
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 16A; 85ns; D2PAK; Ufmax: 1.2V
Mounting: SMD
Max. forward voltage: 1.2V
Max. off-state voltage: 200V
Load current: 16A
Kind of package: reel; tape
Semiconductor structure: common anode; double
Case: D2PAK
Type of diode: rectifying
Reverse recovery time: 85ns
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| NRVUB1620CTT4G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 8Ax2; 35ns; D2PAK; Ufmax: 0.895V
Mounting: SMD
Max. forward impulse current: 100A
Max. forward voltage: 0.895V
Application: automotive industry
Max. off-state voltage: 200V
Load current: 8A x2
Max. load current: 16A
Kind of package: reel; tape
Semiconductor structure: common cathode; double
Case: D2PAK
Type of diode: rectifying
Reverse recovery time: 35ns
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 8Ax2; 35ns; D2PAK; Ufmax: 0.895V
Mounting: SMD
Max. forward impulse current: 100A
Max. forward voltage: 0.895V
Application: automotive industry
Max. off-state voltage: 200V
Load current: 8A x2
Max. load current: 16A
Kind of package: reel; tape
Semiconductor structure: common cathode; double
Case: D2PAK
Type of diode: rectifying
Reverse recovery time: 35ns
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| NRVUB1620CTRT4G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 8Ax2; 85ns; D2PAK; Ufmax: 1.2V
Mounting: SMD
Max. forward impulse current: 100A
Max. forward voltage: 1.2V
Application: automotive industry
Max. off-state voltage: 200V
Load current: 8A x2
Max. load current: 16A
Kind of package: reel; tape
Semiconductor structure: common anode; double
Case: D2PAK
Type of diode: rectifying
Reverse recovery time: 85ns
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 8Ax2; 85ns; D2PAK; Ufmax: 1.2V
Mounting: SMD
Max. forward impulse current: 100A
Max. forward voltage: 1.2V
Application: automotive industry
Max. off-state voltage: 200V
Load current: 8A x2
Max. load current: 16A
Kind of package: reel; tape
Semiconductor structure: common anode; double
Case: D2PAK
Type of diode: rectifying
Reverse recovery time: 85ns
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| 1SMA5931BT3G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 18V; SMD; SMA; reel,tape; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Case: SMA
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 18V; SMD; SMA; reel,tape; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Case: SMA
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
на замовлення 4870 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 34.59 грн |
| 32+ | 12.93 грн |
| 50+ | 11.12 грн |
| 100+ | 10.38 грн |
| 250+ | 9.39 грн |
| 500+ | 8.65 грн |
| 1000+ | 7.91 грн |
| 3000+ | 6.75 грн |
| SZ1SMA5931BT3G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 18V; SMD; SMA; reel,tape; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Case: SMA
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 18V; SMD; SMA; reel,tape; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Case: SMA
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
Application: automotive industry
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| MUN2211T1G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.23W; SC59; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.23W
Case: SC59
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Current gain: 35...60
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.23W; SC59; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.23W
Case: SC59
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Current gain: 35...60
на замовлення 21270 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 63+ | 7.10 грн |
| 85+ | 4.86 грн |
| 127+ | 3.24 грн |
| 154+ | 2.68 грн |
| 500+ | 1.75 грн |
| 1000+ | 1.56 грн |
| 3000+ | 1.35 грн |
| 6000+ | 1.24 грн |
| 9000+ | 1.20 грн |
| FCH060N80-F155 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 36.8A; Idm: 174A; 500W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 36.8A
Pulsed drain current: 174A
Power dissipation: 500W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 54mΩ
Mounting: THT
Gate charge: 0.27µC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 36.8A; Idm: 174A; 500W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 36.8A
Pulsed drain current: 174A
Power dissipation: 500W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 54mΩ
Mounting: THT
Gate charge: 0.27µC
Kind of package: tube
Kind of channel: enhancement
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од. на суму грн.
| NTHL082N65S3HF |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 40A; Idm: 100A; 313W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 40A
Pulsed drain current: 100A
Power dissipation: 313W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 82mΩ
Mounting: THT
Gate charge: 79nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 40A; Idm: 100A; 313W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 40A
Pulsed drain current: 100A
Power dissipation: 313W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 82mΩ
Mounting: THT
Gate charge: 79nC
Kind of package: tube
Kind of channel: enhancement
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| NCP1076BAP065G |
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Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; DIP8; flyback; 6.5÷20VDC
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.65A
Frequency: 59...71kHz
Mounting: SMD
Case: DIP8
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
On-state resistance: 6.8Ω
Operating voltage: 6.5...20V DC
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; DIP8; flyback; 6.5÷20VDC
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.65A
Frequency: 59...71kHz
Mounting: SMD
Case: DIP8
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
On-state resistance: 6.8Ω
Operating voltage: 6.5...20V DC
на замовлення 195 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 110.36 грн |
| 10+ | 97.18 грн |
| 50+ | 87.30 грн |
| ESD7351XV2T1G |
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Виробник: ONSEMI
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 0.15W; 5V; SOD523; reel,tape; 0.43÷0.6pF
Type of diode: TVS
Version: ESD
Peak pulse power dissipation: 0.15W
Max. off-state voltage: 3.3V
Breakdown voltage: 5V
Case: SOD523
Mounting: SMD
Leakage current: 1nA
Kind of package: reel; tape
Capacitance: 0.43...0.6pF
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 0.15W; 5V; SOD523; reel,tape; 0.43÷0.6pF
Type of diode: TVS
Version: ESD
Peak pulse power dissipation: 0.15W
Max. off-state voltage: 3.3V
Breakdown voltage: 5V
Case: SOD523
Mounting: SMD
Leakage current: 1nA
Kind of package: reel; tape
Capacitance: 0.43...0.6pF
на замовлення 5751 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 63+ | 7.10 грн |
| 68+ | 6.09 грн |
| 77+ | 5.35 грн |
| 108+ | 3.81 грн |
| 500+ | 3.24 грн |
| 1000+ | 3.14 грн |
| 3000+ | 3.07 грн |
| ESD7551N2T5G |
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Виробник: ONSEMI
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 0.25W; 5V; CASE714AB,X2DFN2; reel,tape
Type of diode: TVS
Version: ESD
Max. off-state voltage: 3.3V
Breakdown voltage: 5V
Mounting: SMD
Leakage current: 50nA
Kind of package: reel; tape
Capacitance: 0.22...0.35pF
Peak pulse power dissipation: 0.25W
Case: CASE714AB; X2DFN2
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 0.25W; 5V; CASE714AB,X2DFN2; reel,tape
Type of diode: TVS
Version: ESD
Max. off-state voltage: 3.3V
Breakdown voltage: 5V
Mounting: SMD
Leakage current: 50nA
Kind of package: reel; tape
Capacitance: 0.22...0.35pF
Peak pulse power dissipation: 0.25W
Case: CASE714AB; X2DFN2
на замовлення 321 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 39+ | 11.53 грн |
| 52+ | 8.07 грн |
| 58+ | 7.17 грн |
| 100+ | 4.63 грн |
| 200+ | 4.04 грн |
| MMBZ5V6ALT1G |
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Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 5.6V; 3A; 24W; double,common anode; SOT23; Ch: 2
Version: ESD
Mounting: SMD
Case: SOT23
Type of diode: TVS array
Tolerance: ±5%
Leakage current: 5µA
Number of channels: 2
Max. forward impulse current: 3A
Max. off-state voltage: 3V
Breakdown voltage: 5.6V
Peak pulse power dissipation: 24W
Kind of package: reel; tape
Semiconductor structure: common anode; double
Category: Protection diodes - arrays
Description: Diode: TVS array; 5.6V; 3A; 24W; double,common anode; SOT23; Ch: 2
Version: ESD
Mounting: SMD
Case: SOT23
Type of diode: TVS array
Tolerance: ±5%
Leakage current: 5µA
Number of channels: 2
Max. forward impulse current: 3A
Max. off-state voltage: 3V
Breakdown voltage: 5.6V
Peak pulse power dissipation: 24W
Kind of package: reel; tape
Semiconductor structure: common anode; double
на замовлення 7222 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 36+ | 12.42 грн |
| 46+ | 9.06 грн |
| 69+ | 6.00 грн |
| 100+ | 4.93 грн |
| 500+ | 3.10 грн |
| 1000+ | 2.56 грн |
| 1200+ | 2.43 грн |
| 1500+ | 2.29 грн |
| 3000+ | 1.91 грн |
| MMQA5V6T1G |
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Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 5.6V; quadruple,common anode; SC74-6; Ch: 4; ±5%
Version: ESD
Mounting: SMD
Case: SC74-6
Type of diode: TVS array
Tolerance: ±5%
Number of channels: 4
Max. off-state voltage: 3V
Breakdown voltage: 5.6V
Kind of package: reel; tape
Semiconductor structure: common anode; quadruple
Category: Protection diodes - arrays
Description: Diode: TVS array; 5.6V; quadruple,common anode; SC74-6; Ch: 4; ±5%
Version: ESD
Mounting: SMD
Case: SC74-6
Type of diode: TVS array
Tolerance: ±5%
Number of channels: 4
Max. off-state voltage: 3V
Breakdown voltage: 5.6V
Kind of package: reel; tape
Semiconductor structure: common anode; quadruple
на замовлення 1485 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 24+ | 18.63 грн |
| 33+ | 12.85 грн |
| 39+ | 10.71 грн |
| 62+ | 6.67 грн |
| 100+ | 5.60 грн |
| NTP360N80S3Z |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 13A; Idm: 32.5A; 96W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 13A
Pulsed drain current: 32.5A
Power dissipation: 96W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 25.3nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 13A; Idm: 32.5A; 96W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 13A
Pulsed drain current: 32.5A
Power dissipation: 96W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 25.3nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 50 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 241.25 грн |
| 5+ | 174.60 грн |
| 10+ | 147.42 грн |
| 25+ | 144.13 грн |
| MM3Z4V7B |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 4.7V; SMD; reel,tape; SOD323F; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD323F
Semiconductor structure: single diode
Manufacturer series: MM3ZxxB
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 4.7V; SMD; reel,tape; SOD323F; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD323F
Semiconductor structure: single diode
Manufacturer series: MM3ZxxB
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| 2SC3647S-TD-E |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 2A; 1.5W; SOT89
Mounting: SMD
Collector-emitter voltage: 100V
Power dissipation: 1.5W
Polarisation: bipolar
Type of transistor: NPN
Current gain: 140...280
Kind of package: reel; tape
Case: SOT89
Frequency: 120MHz
Collector current: 2A
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 2A; 1.5W; SOT89
Mounting: SMD
Collector-emitter voltage: 100V
Power dissipation: 1.5W
Polarisation: bipolar
Type of transistor: NPN
Current gain: 140...280
Kind of package: reel; tape
Case: SOT89
Frequency: 120MHz
Collector current: 2A
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| MCT62 |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 2; OUT: transistor; Uinsul: 5.3kV; Uce: 85V
Mounting: THT
Insulation voltage: 5.3kV
Type of optocoupler: optocoupler
Case: DIP8
Number of channels: 2
Collector-emitter voltage: 85V
CTR@If: 100%@5mA
Kind of output: transistor
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 2; OUT: transistor; Uinsul: 5.3kV; Uce: 85V
Mounting: THT
Insulation voltage: 5.3kV
Type of optocoupler: optocoupler
Case: DIP8
Number of channels: 2
Collector-emitter voltage: 85V
CTR@If: 100%@5mA
Kind of output: transistor
на замовлення 2514 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 55.88 грн |
| 11+ | 38.05 грн |
| 25+ | 33.44 грн |
| 50+ | 30.23 грн |
| 100+ | 27.26 грн |
| 500+ | 26.44 грн |
| MCT62S |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: transistor; Uinsul: 5.3kV; Uce: 85V
Mounting: SMD
Insulation voltage: 5.3kV
Type of optocoupler: optocoupler
Case: Gull wing 8
Number of channels: 2
Collector-emitter voltage: 85V
CTR@If: 100%@5mA
Kind of output: transistor
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: transistor; Uinsul: 5.3kV; Uce: 85V
Mounting: SMD
Insulation voltage: 5.3kV
Type of optocoupler: optocoupler
Case: Gull wing 8
Number of channels: 2
Collector-emitter voltage: 85V
CTR@If: 100%@5mA
Kind of output: transistor
на замовлення 37 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 55.88 грн |
| 13+ | 32.94 грн |
| 25+ | 30.55 грн |
| MCT62SD |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: transistor; Uinsul: 5kV; Uce: 85V; DIP8
Manufacturer series: MCT62
Mounting: SMD
Insulation voltage: 5kV
Max. off-state voltage: 3V
Type of optocoupler: optocoupler
Turn-on time: 3µs
Case: DIP8
Turn-off time: 3µs
Number of channels: 2
Collector-emitter voltage: 85V
CTR@If: 100%@5mA
Kind of output: transistor
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: transistor; Uinsul: 5kV; Uce: 85V; DIP8
Manufacturer series: MCT62
Mounting: SMD
Insulation voltage: 5kV
Max. off-state voltage: 3V
Type of optocoupler: optocoupler
Turn-on time: 3µs
Case: DIP8
Turn-off time: 3µs
Number of channels: 2
Collector-emitter voltage: 85V
CTR@If: 100%@5mA
Kind of output: transistor
на замовлення 952 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 62.97 грн |
| 10+ | 42.83 грн |
| 50+ | 36.73 грн |
| MCT623SD |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: transistor; Uinsul: 5kV; Uce: 85V; DIP8
Manufacturer series: MCT62
Mounting: SMD
Insulation voltage: 5kV
Max. off-state voltage: 3V
Type of optocoupler: optocoupler
Turn-on time: 3µs
Case: DIP8
Turn-off time: 3µs
Number of channels: 2
Collector-emitter voltage: 85V
CTR@If: 100%@5mA
Kind of output: transistor
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: transistor; Uinsul: 5kV; Uce: 85V; DIP8
Manufacturer series: MCT62
Mounting: SMD
Insulation voltage: 5kV
Max. off-state voltage: 3V
Type of optocoupler: optocoupler
Turn-on time: 3µs
Case: DIP8
Turn-off time: 3µs
Number of channels: 2
Collector-emitter voltage: 85V
CTR@If: 100%@5mA
Kind of output: transistor
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| FDN339AN |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3A; 0.5W; SuperSOT-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3A
Power dissipation: 0.5W
Case: SuperSOT-3
Gate-source voltage: ±8V
On-state resistance: 61mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
Technology: PowerTrench®
Gate charge: 10nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3A; 0.5W; SuperSOT-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3A
Power dissipation: 0.5W
Case: SuperSOT-3
Gate-source voltage: ±8V
On-state resistance: 61mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
Technology: PowerTrench®
Gate charge: 10nC
на замовлення 2220 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 48.78 грн |
| 15+ | 28.83 грн |
| 17+ | 25.37 грн |
| 50+ | 19.27 грн |
| 100+ | 17.30 грн |
| 500+ | 14.82 грн |
| NDS355AN |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.7A; 0.5W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 1.7A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.23Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
Gate charge: 5nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.7A; 0.5W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 1.7A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.23Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
Gate charge: 5nC
на замовлення 242 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 55.88 грн |
| 11+ | 40.03 грн |
| 12+ | 34.92 грн |
| 50+ | 25.12 грн |
| 100+ | 21.91 грн |
| MC74VHCT50ADTR2G |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 6; CMOS,TTL; SMD; TSSOP14
Mounting: SMD
Supply voltage: 2...5.5V DC
Manufacturer series: VHCT
Type of integrated circuit: digital
Operating temperature: -40...125°C
Technology: CMOS; TTL
Case: TSSOP14
Kind of integrated circuit: buffer; non-inverting
Number of channels: 6
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 6; CMOS,TTL; SMD; TSSOP14
Mounting: SMD
Supply voltage: 2...5.5V DC
Manufacturer series: VHCT
Type of integrated circuit: digital
Operating temperature: -40...125°C
Technology: CMOS; TTL
Case: TSSOP14
Kind of integrated circuit: buffer; non-inverting
Number of channels: 6
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| 4N27M |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 7.5kV; Uce: 30V
Number of channels: 1
CTR@If: 10%@10mA
Collector-emitter voltage: 30V
Insulation voltage: 7.5kV
Case: DIP6
Type of optocoupler: optocoupler
Mounting: THT
Kind of output: transistor
Turn-on time: 2µs
Turn-off time: 2µs
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 7.5kV; Uce: 30V
Number of channels: 1
CTR@If: 10%@10mA
Collector-emitter voltage: 30V
Insulation voltage: 7.5kV
Case: DIP6
Type of optocoupler: optocoupler
Mounting: THT
Kind of output: transistor
Turn-on time: 2µs
Turn-off time: 2µs
на замовлення 629 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 44.35 грн |
| 16+ | 26.19 грн |
| 50+ | 19.27 грн |
| 100+ | 16.47 грн |
| NCV8664ST50T3G |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.15A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 5V
Output current: 0.15A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.15A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 5V
Output current: 0.15A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
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| MM3Z5V1ST1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 5.1V; SMD; SOD323; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.1V
Kind of package: reel; tape
Case: SOD323
Mounting: SMD
Tolerance: ±2%
Semiconductor structure: single diode
Manufacturer series: MM3ZxxST1G
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 5.1V; SMD; SOD323; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.1V
Kind of package: reel; tape
Case: SOD323
Mounting: SMD
Tolerance: ±2%
Semiconductor structure: single diode
Manufacturer series: MM3ZxxST1G
на замовлення 1112 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 63+ | 7.10 грн |
| 100+ | 4.12 грн |
| 147+ | 2.82 грн |
| 176+ | 2.35 грн |
| 250+ | 1.84 грн |
| 500+ | 1.51 грн |
| 1000+ | 1.24 грн |
| MM3Z5V1B |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 5.1V; SMD; SOD323F; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±2%
Case: SOD323F
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: MM3ZxxB
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 5.1V; SMD; SOD323F; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±2%
Case: SOD323F
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: MM3ZxxB
на замовлення 1061 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 50+ | 8.87 грн |
| 60+ | 6.92 грн |
| 67+ | 6.18 грн |
| 94+ | 4.40 грн |
| 110+ | 3.76 грн |
| 500+ | 2.68 грн |
| 1000+ | 2.41 грн |
| BZX84B5V1LT1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 5.1V; SMD; SOT23; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±2%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: BZX84B
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 5.1V; SMD; SOT23; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±2%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: BZX84B
на замовлення 108 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 36+ | 12.42 грн |
| 45+ | 9.22 грн |
| 52+ | 8.07 грн |
| 72+ | 5.73 грн |
| 100+ | 4.92 грн |
| 1N5231C |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 5.1V; bulk; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.1V
Kind of package: bulk
Case: DO35
Mounting: THT
Tolerance: ±2%
Semiconductor structure: single diode
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 5.1V; bulk; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.1V
Kind of package: bulk
Case: DO35
Mounting: THT
Tolerance: ±2%
Semiconductor structure: single diode
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| 1N5231CTR |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 5.1V; reel,tape; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.1V
Kind of package: reel; tape
Case: DO35
Mounting: THT
Tolerance: ±2%
Semiconductor structure: single diode
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 5.1V; reel,tape; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.1V
Kind of package: reel; tape
Case: DO35
Mounting: THT
Tolerance: ±2%
Semiconductor structure: single diode
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| SS32 |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 20V; 3A; reel,tape
Mounting: SMD
Kind of package: reel; tape
Max. forward voltage: 0.5V
Load current: 3A
Max. off-state voltage: 20V
Max. forward impulse current: 100A
Case: SMC
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 20V; 3A; reel,tape
Mounting: SMD
Kind of package: reel; tape
Max. forward voltage: 0.5V
Load current: 3A
Max. off-state voltage: 20V
Max. forward impulse current: 100A
Case: SMC
Type of diode: Schottky rectifying
Semiconductor structure: single diode
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| MUN5235DW1T1G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.187W; R1: 2.2kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.187W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Current gain: 140
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.187W; R1: 2.2kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.187W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Current gain: 140
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| SMUN5235DW1T1G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; R1: 2.2kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; R1: 2.2kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
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| SMUN5235DW1T3G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; R1: 2.2kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; R1: 2.2kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
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Мінімальне замовлення: 10000 шт
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| SBRS8190NT3G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 90V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 90V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Max. forward impulse current: 50A
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 90V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 90V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Max. forward impulse current: 50A
Kind of package: reel; tape
Application: automotive industry
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| SS28 |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 80V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 80V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.85V
Max. forward impulse current: 50A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 80V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 80V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.85V
Max. forward impulse current: 50A
Kind of package: reel; tape
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| UF3C065080K4S |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-JFET / N-MOSFET; SiC; unipolar; cascode; 650V; 23A
Technology: SiC
Mounting: THT
Case: TO247-4
Kind of package: tube
Gate charge: 43nC
On-state resistance: 80mΩ
Drain current: 23A
Gate-source voltage: ±25V
Power dissipation: 190W
Pulsed drain current: 65A
Drain-source voltage: 650V
Kind of channel: enhancement
Version: ESD
Type of transistor: N-JFET / N-MOSFET
Features of semiconductor devices: Kelvin terminal
Kind of transistor: cascode
Polarisation: unipolar
Category: THT N channel transistors
Description: Transistor: N-JFET / N-MOSFET; SiC; unipolar; cascode; 650V; 23A
Technology: SiC
Mounting: THT
Case: TO247-4
Kind of package: tube
Gate charge: 43nC
On-state resistance: 80mΩ
Drain current: 23A
Gate-source voltage: ±25V
Power dissipation: 190W
Pulsed drain current: 65A
Drain-source voltage: 650V
Kind of channel: enhancement
Version: ESD
Type of transistor: N-JFET / N-MOSFET
Features of semiconductor devices: Kelvin terminal
Kind of transistor: cascode
Polarisation: unipolar
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В кошику
од. на суму грн.


































