| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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RHRG3060 | ONSEMI |
Category: THT universal diodesDescription: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 325A; TO247-2; 125W Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 30A Semiconductor structure: single diode Kind of package: tube Max. forward impulse current: 325A Case: TO247-2 Reverse recovery time: 45ns Max. load current: 70A Max. forward voltage: 2.1V Power dissipation: 125W Features of semiconductor devices: ultrafast switching |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| RHRG3060-F085 | ONSEMI |
Category: THT universal diodesDescription: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 90A; TO247-2; 45ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 30A Semiconductor structure: single diode Kind of package: tube Max. forward impulse current: 90A Case: TO247-2 Reverse recovery time: 45ns Application: automotive industry |
на замовлення 41 шт: термін постачання 21-30 дні (днів) |
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FSL126HR | ONSEMI |
Category: Voltage regulators - PWM circuitsDescription: IC: PMIC; AC/DC switcher,PWM controller; 2A; 650V; 100kHz; Ch: 1 Type of integrated circuit: PMIC Kind of integrated circuit: AC/DC switcher; PWM controller Output current: 2A Output voltage: 650V Frequency: 0.1MHz Number of channels: 1 Case: DIP8 Mounting: THT Operating temperature: -40...105°C Topology: flyback Input voltage: 85...265V On-state resistance: 6.2Ω Duty cycle factor: 71...83% Power: 17W Application: SMPS Operating voltage: 8...24V DC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| MBR8H100MFST1G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; DFN5x6; SMD; 100V; 8A; reel,tape Case: DFN5x6 Mounting: SMD Kind of package: reel; tape Type of diode: Schottky rectifying Semiconductor structure: single diode Max. forward voltage: 0.9V Load current: 8A Max. forward impulse current: 75A Max. off-state voltage: 100V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NRVB8H100MFSWFT1G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; DFN5; SMD; 100V; 8A; reel,tape Case: DFN5 Mounting: SMD Kind of package: reel; tape Type of diode: Schottky rectifying Semiconductor structure: single diode Max. forward voltage: 0.9V Load current: 8A Max. load current: 16A Max. forward impulse current: 75A Max. off-state voltage: 100V Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NRVB8H100MFSWFT3G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; DFN5; SMD; 100V; 8A; reel,tape Case: DFN5 Mounting: SMD Kind of package: reel; tape Type of diode: Schottky rectifying Semiconductor structure: single diode Max. forward voltage: 0.9V Load current: 8A Max. load current: 16A Max. forward impulse current: 75A Max. off-state voltage: 100V Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| MBRB8H100T4G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; D2PAK; SMD; 100V; 8A; reel,tape Case: D2PAK Mounting: SMD Kind of package: reel; tape Type of diode: Schottky rectifying Semiconductor structure: single diode Max. forward voltage: 0.55V Load current: 8A Max. forward impulse current: 250A Max. off-state voltage: 100V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| BAV99 | ONSEMI |
Category: SMD universal diodesDescription: Diode: switching; SMD; 70V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 8A Type of diode: switching Mounting: SMD Max. off-state voltage: 70V Load current: 0.2A Reverse recovery time: 6ns Capacitance: 1.5pF Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 8A Power dissipation: 0.35W Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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MM74HCT05MTCX | ONSEMI |
Category: Gates, invertersDescription: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; TSSOP14; 4.5÷5.5VDC; 10ns Type of integrated circuit: digital Kind of gate: NOT Number of channels: hex; 6 Number of inputs: 1 Technology: CMOS Mounting: SMD Case: TSSOP14 Supply voltage: 4.5...5.5V DC Operating temperature: -40...85°C Kind of package: reel; tape Delay time: 10ns Kind of output: open drain Family: HCT |
на замовлення 1705 шт: термін постачання 21-30 дні (днів) |
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MM74HCT05MX | ONSEMI |
Category: Gates, invertersDescription: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; SO14; 4.5÷5.5VDC; -40÷85°C Type of integrated circuit: digital Kind of gate: NOT Number of channels: hex; 6 Number of inputs: 1 Technology: CMOS Mounting: SMD Case: SO14 Supply voltage: 4.5...5.5V DC Operating temperature: -40...85°C Kind of package: reel; tape Delay time: 10ns Kind of output: open drain Family: HCT |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| CAT24C03WI-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 2kbEEPROM; I2C; 256x8bit; 1.8÷5.5V; 400kHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 2kb EEPROM Interface: I2C Memory organisation: 256x8bit Operating voltage: 1.8...5.5V Clock frequency: 400kHz Mounting: SMD Case: SOIC8 Kind of interface: serial Operating temperature: -40...85°C Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| CS5173EDR8G | ONSEMI |
Category: Voltage regulators - DC/DC circuitsDescription: PMIC; DC/DC converter; SO8; SMD; reel,tape; automotive industry Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Case: SO8 Mounting: SMD Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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TIP31C | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 100V; 3A; 40W; TO220AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 3A Case: TO220AB Mounting: THT Frequency: 3MHz Kind of package: tube Power dissipation: 40W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| FGD3040G2-F085V | ONSEMI |
Category: SMD IGBT transistorsDescription: Transistor: IGBT; 400V; 25.6A; 150W; DPAK; Features: logic level Case: DPAK Mounting: SMD Type of transistor: IGBT Application: ignition systems Features of semiconductor devices: logic level Kind of package: reel; tape Gate charge: 21nC Gate-emitter voltage: ±10V Power dissipation: 150W Collector current: 25.6A Collector-emitter voltage: 400V Version: ESD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| FGD3040G2-F085 | ONSEMI |
Category: SMD IGBT transistorsDescription: Transistor: IGBT; 400V; 25.6A; 150W; DPAK; Features: logic level Case: DPAK Mounting: SMD Type of transistor: IGBT Application: ignition systems Features of semiconductor devices: logic level Kind of package: reel; tape Gate charge: 21nC Gate-emitter voltage: ±10V Power dissipation: 150W Collector current: 25.6A Collector-emitter voltage: 400V Version: ESD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| FGD3040G2-F085C | ONSEMI |
Category: SMD IGBT transistorsDescription: Transistor: IGBT; 400V; 25.6A; 150W; DPAK; Features: logic level Case: DPAK Mounting: SMD Type of transistor: IGBT Application: ignition systems Features of semiconductor devices: logic level Kind of package: reel; tape Gate charge: 21nC Gate-emitter voltage: ±10V Power dissipation: 150W Collector current: 25.6A Collector-emitter voltage: 400V Version: ESD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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BZX84C47LT1G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 0.3W; 47V; SMD; reel,tape; SOT23; single diode; 0.05uA Type of diode: Zener Power dissipation: 0.3W Zener voltage: 47V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Leakage current: 50nA Manufacturer series: BZX84C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MOC3032M | ONSEMI |
Category: OptotriacsDescription: Optotriac; 7.5kV; triac; DIP6; Ch: 1; MOC303XM; 2kV/μs Type of optocoupler: optotriac Insulation voltage: 7.5kV Kind of output: triac Case: DIP6 Mounting: THT Number of channels: 1 Slew rate: 2kV/μs Manufacturer series: MOC303XM |
на замовлення 635 шт: термін постачання 21-30 дні (днів) |
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MOC3012M | ONSEMI |
Category: OptotriacsDescription: Optotriac; 5.3kV; triac; DIP6; Ch: 1; MOC301XM Type of optocoupler: optotriac Insulation voltage: 5.3kV Kind of output: triac Case: DIP6 Mounting: THT Number of channels: 1 Manufacturer series: MOC301XM |
на замовлення 664 шт: термін постачання 21-30 дні (днів) |
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MOC3011M | ONSEMI |
Category: OptotriacsDescription: Optotriac; 4.17kV; Uout: 400V; triac; DIP6; Ch: 1; MOC301XM Type of optocoupler: optotriac Insulation voltage: 4.17kV Output voltage: 400V Kind of output: triac Case: DIP6 Trigger current: 60mA Mounting: THT Number of channels: 1 Max. off-state voltage: 3V Manufacturer series: MOC301XM |
на замовлення 149 шт: термін постачання 21-30 дні (днів) |
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FDA24N50 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 14A; Idm: 96A; 270W; TO3PN Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 14A Pulsed drain current: 96A Power dissipation: 270W Case: TO3PN Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: THT Gate charge: 85nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MMBT2222A | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 40V; 1A; 1W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 1A Power dissipation: 1W Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Frequency: 300MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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RFD16N06LESM9A | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 16A; 90W; DPAK Case: DPAK Type of transistor: N-MOSFET Kind of package: reel; tape Mounting: SMD Polarisation: unipolar Gate charge: 62nC On-state resistance: 47mΩ Gate-source voltage: ±8V Drain current: 16A Drain-source voltage: 60V Power dissipation: 90W Kind of channel: enhancement |
на замовлення 137 шт: термін постачання 21-30 дні (днів) |
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RFD16N05SM9A | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 50V; 16A; 72W; DPAK Case: DPAK Type of transistor: N-MOSFET Kind of package: reel; tape Mounting: SMD Polarisation: unipolar Gate charge: 80nC On-state resistance: 47mΩ Gate-source voltage: ±20V Drain current: 16A Drain-source voltage: 50V Power dissipation: 72W Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| MC74HC1G04DBVT1G | ONSEMI |
Category: Gates, invertersDescription: IC: digital Type of integrated circuit: digital |
на замовлення 39000 шт: термін постачання 21-30 дні (днів) |
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| MC74HC1G04DFT1G-Q | ONSEMI |
Category: Gates, invertersDescription: IC: digital Type of integrated circuit: digital |
на замовлення 30000 шт: термін постачання 21-30 дні (днів) |
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| MC74HC1G04DFT2G-Q | ONSEMI |
Category: Gates, invertersDescription: IC: digital Type of integrated circuit: digital |
на замовлення 30000 шт: термін постачання 21-30 дні (днів) |
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| NC7SZ04L6X | ONSEMI |
Category: Gates, invertersDescription: IC: digital; inverter; Ch: 1; IN: 1; CMOS; SMD; SIP6; 7SZ; -40÷85°C; 2uA Type of integrated circuit: digital Kind of integrated circuit: inverter Number of channels: 1 Number of inputs: 1 Technology: CMOS Mounting: SMD Case: SIP6 Manufacturer series: 7SZ Operating temperature: -40...85°C Quiescent current: 2µA |
на замовлення 5000 шт: термін постачання 21-30 дні (днів) |
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MMSZ18T1G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 0.5W; 18V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 18V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode Manufacturer series: MMSZxxT1G |
на замовлення 5260 шт: термін постачання 21-30 дні (днів) |
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| SZMMSZ18T1G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 0.5W; 18V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 18V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode Manufacturer series: MMSZxxT1G Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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MMSZ5235BT1G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 0.5W; 6.8V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 6.8V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode Manufacturer series: MMSZ52xxB |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| SZMMSZ5235BT1G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 0.5W; 6.8V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 6.8V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode Manufacturer series: MMSZ52xxB Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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MPSA29-D26Z | ONSEMI |
Category: NPN THT Darlington transistorsDescription: Transistor: NPN; bipolar; Darlington; 100V; 0.8A; 0.625W; TO92 Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 100V Collector current: 0.8A Power dissipation: 0.625W Case: TO92 Current gain: 10k Mounting: THT Kind of package: reel; tape Frequency: 125MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MPSA29 | ONSEMI |
Category: NPN THT Darlington transistorsDescription: Transistor: NPN; bipolar; Darlington; 100V; 0.8A; 0.625W; TO92 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| NCP1032AMNTXG | ONSEMI |
Category: Voltage regulators - DC/DC circuitsDescription: IC: PMIC; AC/DC switcher,PWM controller; WDFN8; flyback Mounting: SMD Topology: flyback Type of integrated circuit: PMIC Operating temperature: -40...125°C Number of channels: 1 On-state resistance: 4.2Ω Operating voltage: 7.55...16V DC Frequency: 275...960kHz Case: WDFN8 Kind of integrated circuit: AC/DC switcher; PWM controller |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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MMBTH81 | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; RF; 20V; 50mA; 225mW; SOT23 Type of transistor: PNP Polarisation: bipolar Kind of transistor: RF Collector-emitter voltage: 20V Collector current: 50mA Power dissipation: 0.225W Case: SOT23 Mounting: SMD Kind of package: reel; tape Frequency: 600MHz |
на замовлення 1737 шт: термін постачання 21-30 дні (днів) |
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| NSVMMBTH81LT1G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; RF; 20V; 0.05A; 0.225W; SOT23 Type of transistor: PNP Polarisation: bipolar Kind of transistor: RF Collector-emitter voltage: 20V Collector current: 50mA Power dissipation: 0.225W Case: SOT23 Mounting: SMD Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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FSQ0765RSUDTU | ONSEMI |
Category: Voltage regulators - PWM circuitsDescription: IC: PMIC; PWM controller,resonant mode controller; 2.28A; 650V Output voltage: 650V Power: 70W Topology: flyback Mounting: THT Type of integrated circuit: PMIC Kind of integrated circuit: PWM controller; resonant mode controller Case: TO220-6 Operating temperature: -25...85°C Number of channels: 1 On-state resistance: 1.6Ω Output current: 2.28A Operating voltage: 8...19V DC Input voltage: 85...265V Frequency: 66.7kHz |
на замовлення 318 шт: термін постачання 21-30 дні (днів) |
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FDP038AN06A0 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 80A; 310W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 80A Power dissipation: 310W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 7.8mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement |
на замовлення 44 шт: термін постачання 21-30 дні (днів) |
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| BSS138 | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 50V; 0.22A; 0.36W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 50V Drain current: 0.22A Power dissipation: 0.36W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 6Ω Mounting: SMD Gate charge: 2.4nC Kind of package: reel; tape Kind of channel: enhancement Features of semiconductor devices: logic level |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| HUFA75645S3S | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 75A; 310W; TO263AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 75A Power dissipation: 310W Case: TO263AB Gate-source voltage: ±20V On-state resistance: 14mΩ Mounting: SMD Gate charge: 198nC Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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FDP050AN06A0 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 18A; 245W; TO220AB Case: TO220AB Mounting: THT Kind of package: tube Polarisation: unipolar Gate charge: 80nC On-state resistance: 11mΩ Drain current: 18A Gate-source voltage: ±20V Drain-source voltage: 60V Power dissipation: 245W Kind of channel: enhancement Type of transistor: N-MOSFET Technology: PowerTrench® |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| FDP054N10 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 144A; Idm: 576A; 263W; TO220-3 Case: TO220-3 Mounting: THT Kind of package: tube Polarisation: unipolar Gate charge: 156nC On-state resistance: 5.5mΩ Drain current: 144A Gate-source voltage: ±20V Drain-source voltage: 100V Power dissipation: 263W Pulsed drain current: 576A Kind of channel: enhancement Type of transistor: N-MOSFET |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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FQP8N80C | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 800V; 5.1A; Idm: 32A; 178W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 5.1A Power dissipation: 178W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 1.55Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 45nC Pulsed drain current: 32A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NRVB0530T1G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOD123; SMD; 30V; 0.5A; reel,tape Application: automotive industry Case: SOD123 Kind of package: reel; tape Mounting: SMD Type of diode: Schottky switching Semiconductor structure: single diode Max. forward voltage: 0.43V Load current: 0.5A Max. forward impulse current: 5.5A Max. off-state voltage: 30V |
на замовлення 6000 шт: термін постачання 21-30 дні (днів) |
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| NCP1253BSN65T1G | ONSEMI |
Category: Voltage regulators - DC/DC circuitsDescription: IC: PMIC; AC/DC switcher,PWM controller; TSOP6; flyback Type of integrated circuit: PMIC Kind of integrated circuit: AC/DC switcher; PWM controller Output current: 0.3...0.5A Frequency: 61...71kHz Mounting: SMD Case: TSOP6 Topology: flyback Number of channels: 1 Operating temperature: -40...125°C Operating voltage: 8.8...25.5V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| MC34064D-5G | ONSEMI |
Category: Watchdog and reset circuitsDescription: IC: supervisor circuit; voltage detector; open drain; SO8; Ch: 1 Type of integrated circuit: supervisor circuit Kind of integrated circuit: voltage detector Kind of RESET output: open drain Active logical level: low Case: SO8 Operating temperature: 0...70°C Mounting: SMD Integrated circuit features: manual reset; watchdog Manufacturer series: PRO Number of channels: 1 |
на замовлення 2201 шт: термін постачання 21-30 дні (днів) |
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| NCP1253BSN100T1G | ONSEMI |
Category: Voltage regulators - DC/DC circuitsDescription: IC: PMIC; AC/DC switcher,PWM controller; TSOP6; flyback Type of integrated circuit: PMIC Kind of integrated circuit: AC/DC switcher; PWM controller Output current: 0.3...0.5A Frequency: 92...108kHz Mounting: SMD Case: TSOP6 Topology: flyback Number of channels: 1 Operating temperature: -40...125°C Operating voltage: 8.8...25.5V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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BC818-40LT1G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 25V; 0.5A; 0.225W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 25V Collector current: 0.5A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 250...600 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| NSVBC818-40LT1G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 25V; 0.5A; 0.225W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 25V Collector current: 0.5A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 250...600 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Application: automotive industry |
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В кошику од. на суму грн. | |||||||||||||||||||
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MMBD701LT1G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOT23; SMD; 70V; 10mA; reel,tape Type of diode: Schottky switching Mounting: SMD Max. off-state voltage: 70V Load current: 10mA Semiconductor structure: single diode Case: SOT23 Max. forward voltage: 0.5V Kind of package: reel; tape |
на замовлення 2052 шт: термін постачання 21-30 дні (днів) |
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MMBD7000LT1G | ONSEMI |
Category: SMD universal diodesDescription: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT23; Ufmax: 1.1V; reel,tape Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.2A Reverse recovery time: 4ns Semiconductor structure: double series Case: SOT23 Max. forward voltage: 1.1V Kind of package: reel; tape |
на замовлення 5490 шт: термін постачання 21-30 дні (днів) |
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MMBD1203 | ONSEMI |
Category: SMD universal diodesDescription: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT23; Ufmax: 1.1V; Ifsm: 2A Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.2A Reverse recovery time: 4ns Semiconductor structure: double series Case: SOT23 Max. forward voltage: 1.1V Kind of package: reel; tape Leakage current: 0.1mA Capacitance: 2pF Power dissipation: 0.35W Max. forward impulse current: 2A |
на замовлення 2870 шт: термін постачання 21-30 дні (днів) |
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MMBD1205 | ONSEMI |
Category: SMD universal diodesDescription: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT23; Ufmax: 1.1V; Ifsm: 2A Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.2A Reverse recovery time: 4ns Semiconductor structure: common anode; double Case: SOT23 Max. forward voltage: 1.1V Kind of package: reel; tape Leakage current: 0.1mA Capacitance: 2pF Power dissipation: 0.35W Max. forward impulse current: 2A |
на замовлення 2797 шт: термін постачання 21-30 дні (днів) |
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MMBD1201 | ONSEMI |
Category: SMD universal diodesDescription: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT23; Ufmax: 1.1V; Ifsm: 2A Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.2A Reverse recovery time: 4ns Semiconductor structure: single diode Case: SOT23 Max. forward voltage: 1.1V Kind of package: reel; tape Leakage current: 0.1mA Capacitance: 2pF Power dissipation: 0.35W Max. forward impulse current: 2A |
на замовлення 446 шт: термін постачання 21-30 дні (днів) |
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MMBD6050LT1G | ONSEMI |
Category: SMD universal diodesDescription: Diode: switching; SMD; 250V; 0.2A; 50ns; SOT23; Ufmax: 1.25V; 400mW Type of diode: switching Mounting: SMD Max. off-state voltage: 250V Load current: 0.2A Reverse recovery time: 50ns Semiconductor structure: single diode Case: SOT23 Max. forward voltage: 1.25V Leakage current: 0.1mA Capacitance: 5pF Power dissipation: 0.4W |
на замовлення 2400 шт: термін постачання 21-30 дні (днів) |
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| MMBD452LT1G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOT23; SMD; 30V; reel,tape Type of diode: Schottky switching Mounting: SMD Max. off-state voltage: 30V Semiconductor structure: double series Case: SOT23 Max. forward voltage: 0.6V Kind of package: reel; tape Capacitance: 1.5pF |
на замовлення 8990 шт: термін постачання 21-30 дні (днів) |
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MMBD6100LT1G | ONSEMI |
Category: SMD universal diodesDescription: Diode: switching; SMD; 70V; 0.2A; 4ns; SOT23; Ufmax: 1.1V; Ifsm: 0.5A Type of diode: switching Mounting: SMD Max. off-state voltage: 70V Load current: 0.2A Reverse recovery time: 4ns Semiconductor structure: common cathode; double Case: SOT23 Max. forward voltage: 1.1V Kind of package: reel; tape Capacitance: 2.5pF Power dissipation: 0.225W Max. forward impulse current: 0.5A |
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В кошику од. на суму грн. | ||||||||||||||||||
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MMBD1504A | ONSEMI |
Category: SMD universal diodesDescription: Diode: switching; SMD; 200V; 0.2A; SOT23; Ufmax: 1.15V; Ifsm: 2A Type of diode: switching Mounting: SMD Max. off-state voltage: 200V Load current: 0.2A Semiconductor structure: common cathode; double Case: SOT23 Max. forward voltage: 1.15V Kind of package: reel; tape Capacitance: 4pF Power dissipation: 0.35W Max. forward impulse current: 2A |
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В кошику од. на суму грн. | ||||||||||||||||||
| MMBD4148 | ONSEMI |
Category: SMD universal diodesDescription: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT23; Ifsm: 2A; 350mW Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.2A Reverse recovery time: 4ns Semiconductor structure: single diode Case: SOT23 Kind of package: reel; tape Max. forward impulse current: 2A Capacitance: 4pF Power dissipation: 0.35W |
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В кошику од. на суму грн. |
| RHRG3060 |
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Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 325A; TO247-2; 125W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 325A
Case: TO247-2
Reverse recovery time: 45ns
Max. load current: 70A
Max. forward voltage: 2.1V
Power dissipation: 125W
Features of semiconductor devices: ultrafast switching
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 325A; TO247-2; 125W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 325A
Case: TO247-2
Reverse recovery time: 45ns
Max. load current: 70A
Max. forward voltage: 2.1V
Power dissipation: 125W
Features of semiconductor devices: ultrafast switching
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| RHRG3060-F085 |
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Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 90A; TO247-2; 45ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 90A
Case: TO247-2
Reverse recovery time: 45ns
Application: automotive industry
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 90A; TO247-2; 45ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 90A
Case: TO247-2
Reverse recovery time: 45ns
Application: automotive industry
на замовлення 41 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 171.44 грн |
| 10+ | 151.50 грн |
| 30+ | 141.14 грн |
| FSL126HR |
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Виробник: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; 2A; 650V; 100kHz; Ch: 1
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 2A
Output voltage: 650V
Frequency: 0.1MHz
Number of channels: 1
Case: DIP8
Mounting: THT
Operating temperature: -40...105°C
Topology: flyback
Input voltage: 85...265V
On-state resistance: 6.2Ω
Duty cycle factor: 71...83%
Power: 17W
Application: SMPS
Operating voltage: 8...24V DC
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; 2A; 650V; 100kHz; Ch: 1
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 2A
Output voltage: 650V
Frequency: 0.1MHz
Number of channels: 1
Case: DIP8
Mounting: THT
Operating temperature: -40...105°C
Topology: flyback
Input voltage: 85...265V
On-state resistance: 6.2Ω
Duty cycle factor: 71...83%
Power: 17W
Application: SMPS
Operating voltage: 8...24V DC
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| MBR8H100MFST1G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5x6; SMD; 100V; 8A; reel,tape
Case: DFN5x6
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward voltage: 0.9V
Load current: 8A
Max. forward impulse current: 75A
Max. off-state voltage: 100V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5x6; SMD; 100V; 8A; reel,tape
Case: DFN5x6
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward voltage: 0.9V
Load current: 8A
Max. forward impulse current: 75A
Max. off-state voltage: 100V
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| NRVB8H100MFSWFT1G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 100V; 8A; reel,tape
Case: DFN5
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward voltage: 0.9V
Load current: 8A
Max. load current: 16A
Max. forward impulse current: 75A
Max. off-state voltage: 100V
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 100V; 8A; reel,tape
Case: DFN5
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward voltage: 0.9V
Load current: 8A
Max. load current: 16A
Max. forward impulse current: 75A
Max. off-state voltage: 100V
Application: automotive industry
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| NRVB8H100MFSWFT3G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 100V; 8A; reel,tape
Case: DFN5
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward voltage: 0.9V
Load current: 8A
Max. load current: 16A
Max. forward impulse current: 75A
Max. off-state voltage: 100V
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 100V; 8A; reel,tape
Case: DFN5
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward voltage: 0.9V
Load current: 8A
Max. load current: 16A
Max. forward impulse current: 75A
Max. off-state voltage: 100V
Application: automotive industry
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| MBRB8H100T4G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 8A; reel,tape
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Load current: 8A
Max. forward impulse current: 250A
Max. off-state voltage: 100V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 8A; reel,tape
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Load current: 8A
Max. forward impulse current: 250A
Max. off-state voltage: 100V
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| BAV99 |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 8A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.2A
Reverse recovery time: 6ns
Capacitance: 1.5pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 8A
Power dissipation: 0.35W
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 8A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.2A
Reverse recovery time: 6ns
Capacitance: 1.5pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 8A
Power dissipation: 0.35W
Kind of package: reel; tape
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| MM74HCT05MTCX |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; TSSOP14; 4.5÷5.5VDC; 10ns
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Delay time: 10ns
Kind of output: open drain
Family: HCT
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; TSSOP14; 4.5÷5.5VDC; 10ns
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Delay time: 10ns
Kind of output: open drain
Family: HCT
на замовлення 1705 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 53.24 грн |
| 12+ | 33.97 грн |
| 25+ | 30.38 грн |
| 100+ | 25.44 грн |
| 250+ | 22.96 грн |
| 500+ | 20.25 грн |
| 1000+ | 18.26 грн |
| MM74HCT05MX |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; SO14; 4.5÷5.5VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Delay time: 10ns
Kind of output: open drain
Family: HCT
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; SO14; 4.5÷5.5VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Delay time: 10ns
Kind of output: open drain
Family: HCT
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| CAT24C03WI-GT3 |
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Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 2kbEEPROM; I2C; 256x8bit; 1.8÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 2kb EEPROM
Interface: I2C
Memory organisation: 256x8bit
Operating voltage: 1.8...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...85°C
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 2kbEEPROM; I2C; 256x8bit; 1.8÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 2kb EEPROM
Interface: I2C
Memory organisation: 256x8bit
Operating voltage: 1.8...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...85°C
Kind of package: reel; tape
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| CS5173EDR8G |
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Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; SO8; SMD; reel,tape; automotive industry
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; SO8; SMD; reel,tape; automotive industry
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
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| TIP31C |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 3A; 40W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Case: TO220AB
Mounting: THT
Frequency: 3MHz
Kind of package: tube
Power dissipation: 40W
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 3A; 40W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Case: TO220AB
Mounting: THT
Frequency: 3MHz
Kind of package: tube
Power dissipation: 40W
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| FGD3040G2-F085V |
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Виробник: ONSEMI
Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 25.6A; 150W; DPAK; Features: logic level
Case: DPAK
Mounting: SMD
Type of transistor: IGBT
Application: ignition systems
Features of semiconductor devices: logic level
Kind of package: reel; tape
Gate charge: 21nC
Gate-emitter voltage: ±10V
Power dissipation: 150W
Collector current: 25.6A
Collector-emitter voltage: 400V
Version: ESD
Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 25.6A; 150W; DPAK; Features: logic level
Case: DPAK
Mounting: SMD
Type of transistor: IGBT
Application: ignition systems
Features of semiconductor devices: logic level
Kind of package: reel; tape
Gate charge: 21nC
Gate-emitter voltage: ±10V
Power dissipation: 150W
Collector current: 25.6A
Collector-emitter voltage: 400V
Version: ESD
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| FGD3040G2-F085 |
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Виробник: ONSEMI
Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 25.6A; 150W; DPAK; Features: logic level
Case: DPAK
Mounting: SMD
Type of transistor: IGBT
Application: ignition systems
Features of semiconductor devices: logic level
Kind of package: reel; tape
Gate charge: 21nC
Gate-emitter voltage: ±10V
Power dissipation: 150W
Collector current: 25.6A
Collector-emitter voltage: 400V
Version: ESD
Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 25.6A; 150W; DPAK; Features: logic level
Case: DPAK
Mounting: SMD
Type of transistor: IGBT
Application: ignition systems
Features of semiconductor devices: logic level
Kind of package: reel; tape
Gate charge: 21nC
Gate-emitter voltage: ±10V
Power dissipation: 150W
Collector current: 25.6A
Collector-emitter voltage: 400V
Version: ESD
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| FGD3040G2-F085C |
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Виробник: ONSEMI
Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 25.6A; 150W; DPAK; Features: logic level
Case: DPAK
Mounting: SMD
Type of transistor: IGBT
Application: ignition systems
Features of semiconductor devices: logic level
Kind of package: reel; tape
Gate charge: 21nC
Gate-emitter voltage: ±10V
Power dissipation: 150W
Collector current: 25.6A
Collector-emitter voltage: 400V
Version: ESD
Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 25.6A; 150W; DPAK; Features: logic level
Case: DPAK
Mounting: SMD
Type of transistor: IGBT
Application: ignition systems
Features of semiconductor devices: logic level
Kind of package: reel; tape
Gate charge: 21nC
Gate-emitter voltage: ±10V
Power dissipation: 150W
Collector current: 25.6A
Collector-emitter voltage: 400V
Version: ESD
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| BZX84C47LT1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 47V; SMD; reel,tape; SOT23; single diode; 0.05uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 47V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 50nA
Manufacturer series: BZX84C
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 47V; SMD; reel,tape; SOT23; single diode; 0.05uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 47V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 50nA
Manufacturer series: BZX84C
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| MOC3032M |
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Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 7.5kV; triac; DIP6; Ch: 1; MOC303XM; 2kV/μs
Type of optocoupler: optotriac
Insulation voltage: 7.5kV
Kind of output: triac
Case: DIP6
Mounting: THT
Number of channels: 1
Slew rate: 2kV/μs
Manufacturer series: MOC303XM
Category: Optotriacs
Description: Optotriac; 7.5kV; triac; DIP6; Ch: 1; MOC303XM; 2kV/μs
Type of optocoupler: optotriac
Insulation voltage: 7.5kV
Kind of output: triac
Case: DIP6
Mounting: THT
Number of channels: 1
Slew rate: 2kV/μs
Manufacturer series: MOC303XM
на замовлення 635 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 60.11 грн |
| 11+ | 37.08 грн |
| 50+ | 30.14 грн |
| MOC3012M |
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Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 5.3kV; triac; DIP6; Ch: 1; MOC301XM
Type of optocoupler: optotriac
Insulation voltage: 5.3kV
Kind of output: triac
Case: DIP6
Mounting: THT
Number of channels: 1
Manufacturer series: MOC301XM
Category: Optotriacs
Description: Optotriac; 5.3kV; triac; DIP6; Ch: 1; MOC301XM
Type of optocoupler: optotriac
Insulation voltage: 5.3kV
Kind of output: triac
Case: DIP6
Mounting: THT
Number of channels: 1
Manufacturer series: MOC301XM
на замовлення 664 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 42.08 грн |
| 13+ | 31.90 грн |
| 20+ | 28.39 грн |
| 50+ | 23.52 грн |
| 100+ | 21.93 грн |
| MOC3011M |
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Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; triac; DIP6; Ch: 1; MOC301XM
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 400V
Kind of output: triac
Case: DIP6
Trigger current: 60mA
Mounting: THT
Number of channels: 1
Max. off-state voltage: 3V
Manufacturer series: MOC301XM
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; triac; DIP6; Ch: 1; MOC301XM
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 400V
Kind of output: triac
Case: DIP6
Trigger current: 60mA
Mounting: THT
Number of channels: 1
Max. off-state voltage: 3V
Manufacturer series: MOC301XM
на замовлення 149 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 47.23 грн |
| 15+ | 27.59 грн |
| 25+ | 24.64 грн |
| 50+ | 22.65 грн |
| 100+ | 20.81 грн |
| FDA24N50 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 14A; Idm: 96A; 270W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 14A
Pulsed drain current: 96A
Power dissipation: 270W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 85nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 14A; Idm: 96A; 270W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 14A
Pulsed drain current: 96A
Power dissipation: 270W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 85nC
Kind of package: tube
Kind of channel: enhancement
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| MMBT2222A |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 1A; 1W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 1A
Power dissipation: 1W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 1A; 1W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 1A
Power dissipation: 1W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
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| RFD16N06LESM9A |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 16A; 90W; DPAK
Case: DPAK
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 62nC
On-state resistance: 47mΩ
Gate-source voltage: ±8V
Drain current: 16A
Drain-source voltage: 60V
Power dissipation: 90W
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 16A; 90W; DPAK
Case: DPAK
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 62nC
On-state resistance: 47mΩ
Gate-source voltage: ±8V
Drain current: 16A
Drain-source voltage: 60V
Power dissipation: 90W
Kind of channel: enhancement
на замовлення 137 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 79.74 грн |
| RFD16N05SM9A |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 16A; 72W; DPAK
Case: DPAK
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 80nC
On-state resistance: 47mΩ
Gate-source voltage: ±20V
Drain current: 16A
Drain-source voltage: 50V
Power dissipation: 72W
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 16A; 72W; DPAK
Case: DPAK
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 80nC
On-state resistance: 47mΩ
Gate-source voltage: ±20V
Drain current: 16A
Drain-source voltage: 50V
Power dissipation: 72W
Kind of channel: enhancement
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| MC74HC1G04DBVT1G |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital
Type of integrated circuit: digital
Category: Gates, inverters
Description: IC: digital
Type of integrated circuit: digital
на замовлення 39000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 2.46 грн |
| MC74HC1G04DFT1G-Q |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital
Type of integrated circuit: digital
Category: Gates, inverters
Description: IC: digital
Type of integrated circuit: digital
на замовлення 30000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 2.20 грн |
| MC74HC1G04DFT2G-Q |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital
Type of integrated circuit: digital
Category: Gates, inverters
Description: IC: digital
Type of integrated circuit: digital
на замовлення 30000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 2.20 грн |
| NC7SZ04L6X |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; inverter; Ch: 1; IN: 1; CMOS; SMD; SIP6; 7SZ; -40÷85°C; 2uA
Type of integrated circuit: digital
Kind of integrated circuit: inverter
Number of channels: 1
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: SIP6
Manufacturer series: 7SZ
Operating temperature: -40...85°C
Quiescent current: 2µA
Category: Gates, inverters
Description: IC: digital; inverter; Ch: 1; IN: 1; CMOS; SMD; SIP6; 7SZ; -40÷85°C; 2uA
Type of integrated circuit: digital
Kind of integrated circuit: inverter
Number of channels: 1
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: SIP6
Manufacturer series: 7SZ
Operating temperature: -40...85°C
Quiescent current: 2µA
на замовлення 5000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5000+ | 4.78 грн |
| MMSZ18T1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 18V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZxxT1G
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 18V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZxxT1G
на замовлення 5260 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 63+ | 6.87 грн |
| 91+ | 4.39 грн |
| 132+ | 3.03 грн |
| 156+ | 2.56 грн |
| 250+ | 2.07 грн |
| 500+ | 1.87 грн |
| SZMMSZ18T1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 18V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZxxT1G
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 18V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZxxT1G
Application: automotive industry
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| MMSZ5235BT1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 6.8V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 6.8V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 6.8V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 6.8V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
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| SZMMSZ5235BT1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 6.8V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 6.8V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 6.8V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 6.8V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
Application: automotive industry
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| MPSA29-D26Z |
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Виробник: ONSEMI
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 0.8A; 0.625W; TO92
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 0.8A
Power dissipation: 0.625W
Case: TO92
Current gain: 10k
Mounting: THT
Kind of package: reel; tape
Frequency: 125MHz
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 0.8A; 0.625W; TO92
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 0.8A
Power dissipation: 0.625W
Case: TO92
Current gain: 10k
Mounting: THT
Kind of package: reel; tape
Frequency: 125MHz
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| MPSA29 |
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Виробник: ONSEMI
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 0.8A; 0.625W; TO92
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 0.8A; 0.625W; TO92
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| NCP1032AMNTXG |
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Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; WDFN8; flyback
Mounting: SMD
Topology: flyback
Type of integrated circuit: PMIC
Operating temperature: -40...125°C
Number of channels: 1
On-state resistance: 4.2Ω
Operating voltage: 7.55...16V DC
Frequency: 275...960kHz
Case: WDFN8
Kind of integrated circuit: AC/DC switcher; PWM controller
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; WDFN8; flyback
Mounting: SMD
Topology: flyback
Type of integrated circuit: PMIC
Operating temperature: -40...125°C
Number of channels: 1
On-state resistance: 4.2Ω
Operating voltage: 7.55...16V DC
Frequency: 275...960kHz
Case: WDFN8
Kind of integrated circuit: AC/DC switcher; PWM controller
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| MMBTH81 |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; RF; 20V; 50mA; 225mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 20V
Collector current: 50mA
Power dissipation: 0.225W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 600MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; RF; 20V; 50mA; 225mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 20V
Collector current: 50mA
Power dissipation: 0.225W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 600MHz
на замовлення 1737 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 36+ | 12.02 грн |
| 46+ | 8.77 грн |
| 52+ | 7.73 грн |
| 62+ | 6.46 грн |
| 71+ | 5.66 грн |
| 100+ | 5.10 грн |
| 250+ | 4.62 грн |
| 500+ | 4.39 грн |
| 1000+ | 4.23 грн |
| NSVMMBTH81LT1G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; RF; 20V; 0.05A; 0.225W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 20V
Collector current: 50mA
Power dissipation: 0.225W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; RF; 20V; 0.05A; 0.225W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 20V
Collector current: 50mA
Power dissipation: 0.225W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
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| FSQ0765RSUDTU |
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Виробник: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller,resonant mode controller; 2.28A; 650V
Output voltage: 650V
Power: 70W
Topology: flyback
Mounting: THT
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller; resonant mode controller
Case: TO220-6
Operating temperature: -25...85°C
Number of channels: 1
On-state resistance: 1.6Ω
Output current: 2.28A
Operating voltage: 8...19V DC
Input voltage: 85...265V
Frequency: 66.7kHz
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller,resonant mode controller; 2.28A; 650V
Output voltage: 650V
Power: 70W
Topology: flyback
Mounting: THT
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller; resonant mode controller
Case: TO220-6
Operating temperature: -25...85°C
Number of channels: 1
On-state resistance: 1.6Ω
Output current: 2.28A
Operating voltage: 8...19V DC
Input voltage: 85...265V
Frequency: 66.7kHz
на замовлення 318 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 166.59 грн |
| 5+ | 138.74 грн |
| 25+ | 122.80 грн |
| 100+ | 120.40 грн |
| FDP038AN06A0 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 310W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 80A
Power dissipation: 310W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 7.8mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 310W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 80A
Power dissipation: 310W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 7.8mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 44 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 254.18 грн |
| 3+ | 212.10 грн |
| 10+ | 187.39 грн |
| BSS138 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 0.22A; 0.36W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.22A
Power dissipation: 0.36W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 6Ω
Mounting: SMD
Gate charge: 2.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 0.22A; 0.36W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.22A
Power dissipation: 0.36W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 6Ω
Mounting: SMD
Gate charge: 2.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
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| HUFA75645S3S |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 75A; 310W; TO263AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 75A
Power dissipation: 310W
Case: TO263AB
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 198nC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 75A; 310W; TO263AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 75A
Power dissipation: 310W
Case: TO263AB
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 198nC
Kind of channel: enhancement
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| FDP050AN06A0 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 18A; 245W; TO220AB
Case: TO220AB
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Gate charge: 80nC
On-state resistance: 11mΩ
Drain current: 18A
Gate-source voltage: ±20V
Drain-source voltage: 60V
Power dissipation: 245W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: PowerTrench®
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 18A; 245W; TO220AB
Case: TO220AB
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Gate charge: 80nC
On-state resistance: 11mΩ
Drain current: 18A
Gate-source voltage: ±20V
Drain-source voltage: 60V
Power dissipation: 245W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: PowerTrench®
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| FDP054N10 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 144A; Idm: 576A; 263W; TO220-3
Case: TO220-3
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Gate charge: 156nC
On-state resistance: 5.5mΩ
Drain current: 144A
Gate-source voltage: ±20V
Drain-source voltage: 100V
Power dissipation: 263W
Pulsed drain current: 576A
Kind of channel: enhancement
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 144A; Idm: 576A; 263W; TO220-3
Case: TO220-3
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Gate charge: 156nC
On-state resistance: 5.5mΩ
Drain current: 144A
Gate-source voltage: ±20V
Drain-source voltage: 100V
Power dissipation: 263W
Pulsed drain current: 576A
Kind of channel: enhancement
Type of transistor: N-MOSFET
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| FQP8N80C |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 5.1A; Idm: 32A; 178W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 5.1A
Power dissipation: 178W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 1.55Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 45nC
Pulsed drain current: 32A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 5.1A; Idm: 32A; 178W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 5.1A
Power dissipation: 178W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 1.55Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 45nC
Pulsed drain current: 32A
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| NRVB0530T1G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.5A; reel,tape
Application: automotive industry
Case: SOD123
Kind of package: reel; tape
Mounting: SMD
Type of diode: Schottky switching
Semiconductor structure: single diode
Max. forward voltage: 0.43V
Load current: 0.5A
Max. forward impulse current: 5.5A
Max. off-state voltage: 30V
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.5A; reel,tape
Application: automotive industry
Case: SOD123
Kind of package: reel; tape
Mounting: SMD
Type of diode: Schottky switching
Semiconductor structure: single diode
Max. forward voltage: 0.43V
Load current: 0.5A
Max. forward impulse current: 5.5A
Max. off-state voltage: 30V
на замовлення 6000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 46+ | 9.45 грн |
| 59+ | 6.86 грн |
| 100+ | 6.54 грн |
| NCP1253BSN65T1G |
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Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; TSOP6; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.3...0.5A
Frequency: 61...71kHz
Mounting: SMD
Case: TSOP6
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 8.8...25.5V DC
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; TSOP6; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.3...0.5A
Frequency: 61...71kHz
Mounting: SMD
Case: TSOP6
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 8.8...25.5V DC
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| MC34064D-5G |
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Виробник: ONSEMI
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; open drain; SO8; Ch: 1
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: voltage detector
Kind of RESET output: open drain
Active logical level: low
Case: SO8
Operating temperature: 0...70°C
Mounting: SMD
Integrated circuit features: manual reset; watchdog
Manufacturer series: PRO
Number of channels: 1
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; open drain; SO8; Ch: 1
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: voltage detector
Kind of RESET output: open drain
Active logical level: low
Case: SO8
Operating temperature: 0...70°C
Mounting: SMD
Integrated circuit features: manual reset; watchdog
Manufacturer series: PRO
Number of channels: 1
на замовлення 2201 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 98+ | 33.32 грн |
| NCP1253BSN100T1G |
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Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; TSOP6; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.3...0.5A
Frequency: 92...108kHz
Mounting: SMD
Case: TSOP6
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 8.8...25.5V DC
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; TSOP6; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.3...0.5A
Frequency: 92...108kHz
Mounting: SMD
Case: TSOP6
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 8.8...25.5V DC
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| BC818-40LT1G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 25V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 250...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 25V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 250...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
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| NSVBC818-40LT1G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 25V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 250...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 25V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 250...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
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| MMBD701LT1G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 70V; 10mA; reel,tape
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 10mA
Semiconductor structure: single diode
Case: SOT23
Max. forward voltage: 0.5V
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 70V; 10mA; reel,tape
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 10mA
Semiconductor structure: single diode
Case: SOT23
Max. forward voltage: 0.5V
Kind of package: reel; tape
на замовлення 2052 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 30+ | 14.60 грн |
| 61+ | 6.54 грн |
| 72+ | 5.58 грн |
| 81+ | 4.93 грн |
| 100+ | 4.31 грн |
| 250+ | 3.60 грн |
| MMBD7000LT1G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT23; Ufmax: 1.1V; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: double series
Case: SOT23
Max. forward voltage: 1.1V
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT23; Ufmax: 1.1V; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: double series
Case: SOT23
Max. forward voltage: 1.1V
Kind of package: reel; tape
на замовлення 5490 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 63+ | 6.87 грн |
| 76+ | 5.26 грн |
| 112+ | 3.57 грн |
| 134+ | 2.99 грн |
| 250+ | 2.37 грн |
| 500+ | 2.00 грн |
| 1000+ | 1.71 грн |
| 3000+ | 1.37 грн |
| MMBD1203 |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT23; Ufmax: 1.1V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: double series
Case: SOT23
Max. forward voltage: 1.1V
Kind of package: reel; tape
Leakage current: 0.1mA
Capacitance: 2pF
Power dissipation: 0.35W
Max. forward impulse current: 2A
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT23; Ufmax: 1.1V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: double series
Case: SOT23
Max. forward voltage: 1.1V
Kind of package: reel; tape
Leakage current: 0.1mA
Capacitance: 2pF
Power dissipation: 0.35W
Max. forward impulse current: 2A
на замовлення 2870 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 39+ | 11.16 грн |
| 49+ | 8.29 грн |
| 53+ | 7.65 грн |
| 100+ | 5.54 грн |
| 250+ | 4.74 грн |
| 500+ | 4.15 грн |
| 1000+ | 3.56 грн |
| MMBD1205 |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT23; Ufmax: 1.1V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: common anode; double
Case: SOT23
Max. forward voltage: 1.1V
Kind of package: reel; tape
Leakage current: 0.1mA
Capacitance: 2pF
Power dissipation: 0.35W
Max. forward impulse current: 2A
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT23; Ufmax: 1.1V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: common anode; double
Case: SOT23
Max. forward voltage: 1.1V
Kind of package: reel; tape
Leakage current: 0.1mA
Capacitance: 2pF
Power dissipation: 0.35W
Max. forward impulse current: 2A
на замовлення 2797 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 36+ | 12.02 грн |
| 46+ | 8.69 грн |
| 65+ | 6.19 грн |
| 100+ | 5.29 грн |
| 500+ | 3.68 грн |
| 1000+ | 3.17 грн |
| MMBD1201 |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT23; Ufmax: 1.1V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOT23
Max. forward voltage: 1.1V
Kind of package: reel; tape
Leakage current: 0.1mA
Capacitance: 2pF
Power dissipation: 0.35W
Max. forward impulse current: 2A
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT23; Ufmax: 1.1V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOT23
Max. forward voltage: 1.1V
Kind of package: reel; tape
Leakage current: 0.1mA
Capacitance: 2pF
Power dissipation: 0.35W
Max. forward impulse current: 2A
на замовлення 446 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 63+ | 6.87 грн |
| 80+ | 5.02 грн |
| 115+ | 3.48 грн |
| MMBD6050LT1G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SOT23; Ufmax: 1.25V; 400mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SOT23
Max. forward voltage: 1.25V
Leakage current: 0.1mA
Capacitance: 5pF
Power dissipation: 0.4W
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SOT23; Ufmax: 1.25V; 400mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SOT23
Max. forward voltage: 1.25V
Leakage current: 0.1mA
Capacitance: 5pF
Power dissipation: 0.4W
на замовлення 2400 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 63+ | 6.87 грн |
| 105+ | 3.83 грн |
| 156+ | 2.57 грн |
| 183+ | 2.18 грн |
| 500+ | 1.54 грн |
| 1000+ | 1.35 грн |
| 1500+ | 1.32 грн |
| MMBD452LT1G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; reel,tape
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 30V
Semiconductor structure: double series
Case: SOT23
Max. forward voltage: 0.6V
Kind of package: reel; tape
Capacitance: 1.5pF
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; reel,tape
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 30V
Semiconductor structure: double series
Case: SOT23
Max. forward voltage: 0.6V
Kind of package: reel; tape
Capacitance: 1.5pF
на замовлення 8990 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 36+ | 12.02 грн |
| 43+ | 9.41 грн |
| 48+ | 8.37 грн |
| 55+ | 7.26 грн |
| 100+ | 5.98 грн |
| 250+ | 5.74 грн |
| MMBD6100LT1G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.2A; 4ns; SOT23; Ufmax: 1.1V; Ifsm: 0.5A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: common cathode; double
Case: SOT23
Max. forward voltage: 1.1V
Kind of package: reel; tape
Capacitance: 2.5pF
Power dissipation: 0.225W
Max. forward impulse current: 0.5A
Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.2A; 4ns; SOT23; Ufmax: 1.1V; Ifsm: 0.5A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: common cathode; double
Case: SOT23
Max. forward voltage: 1.1V
Kind of package: reel; tape
Capacitance: 2.5pF
Power dissipation: 0.225W
Max. forward impulse current: 0.5A
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| MMBD1504A |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; SOT23; Ufmax: 1.15V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.2A
Semiconductor structure: common cathode; double
Case: SOT23
Max. forward voltage: 1.15V
Kind of package: reel; tape
Capacitance: 4pF
Power dissipation: 0.35W
Max. forward impulse current: 2A
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; SOT23; Ufmax: 1.15V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.2A
Semiconductor structure: common cathode; double
Case: SOT23
Max. forward voltage: 1.15V
Kind of package: reel; tape
Capacitance: 4pF
Power dissipation: 0.35W
Max. forward impulse current: 2A
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| MMBD4148 |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT23; Ifsm: 2A; 350mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOT23
Kind of package: reel; tape
Max. forward impulse current: 2A
Capacitance: 4pF
Power dissipation: 0.35W
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT23; Ifsm: 2A; 350mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOT23
Kind of package: reel; tape
Max. forward impulse current: 2A
Capacitance: 4pF
Power dissipation: 0.35W
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од. на суму грн.

















