| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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| FDWS86068-F085 | ONSEMI |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 80A; 214W; DFNW8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 80A Power dissipation: 214W Case: DFNW8 Gate-source voltage: ±20V On-state resistance: 6.4mΩ Mounting: SMD Gate charge: 31nC Kind of package: reel; tape Kind of channel: enhancement |
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| FDWS86369-F085 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 65A; 107W; DFNW8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 65A Power dissipation: 107W Case: DFNW8 Gate-source voltage: ±20V On-state resistance: 7.5mΩ Mounting: SMD Gate charge: 35nC Kind of package: reel; tape Kind of channel: enhancement |
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| FDWS86380-F085 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 50A; 75W; DFNW8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 50A Power dissipation: 75W Case: DFNW8 Gate-source voltage: ±20V On-state resistance: 13.4mΩ Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhancement |
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| NCV8164AML120TCG | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 0.3A; DFNW8; SMD Case: DFNW8 Mounting: SMD Kind of package: reel; tape Application: automotive industry Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Output voltage: 1.2V Output current: 0.3A Number of channels: 1 |
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| NCV8164AML150TCG | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 1.5V; 0.3A; DFNW8; SMD Case: DFNW8 Mounting: SMD Kind of package: reel; tape Application: automotive industry Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Output voltage: 1.5V Output current: 0.3A Number of channels: 1 |
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| NCV8164AML180TCG | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.3A; DFNW8; SMD Case: DFNW8 Mounting: SMD Kind of package: reel; tape Application: automotive industry Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Output voltage: 1.8V Output current: 0.3A Number of channels: 1 |
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| NCV8164AML250TCG | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 0.3A; DFNW8; SMD Case: DFNW8 Mounting: SMD Kind of package: reel; tape Application: automotive industry Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Output voltage: 2.5V Output current: 0.3A Number of channels: 1 |
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| NCV8164AML330TCG | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.3A; DFNW8; SMD Case: DFNW8 Mounting: SMD Kind of package: reel; tape Application: automotive industry Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Output voltage: 3.3V Output current: 0.3A Number of channels: 1 |
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| NCV8164AMLADJTCG | ONSEMI |
Category: LDO adjustable voltage regulators Description: IC: voltage regulator; LDO,linear,adjustable; -0.3÷6.3V; 0.3A Case: DFNW8 Mounting: SMD Kind of package: reel; tape Application: automotive industry Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; LDO; linear Output voltage: -0.3...6.3V Output current: 0.3A Number of channels: 1 |
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| NCV8165ML330TCG | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.5A; DFNW8; SMD Case: DFNW8 Mounting: SMD Kind of package: reel; tape Application: automotive industry Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Output voltage: 3.3V Output current: 0.5A Number of channels: 1 |
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| NCV8187AMLE180TCG | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 1.2A; DFNW8; SMD Case: DFNW8 Mounting: SMD Kind of package: reel; tape Application: automotive industry Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Output voltage: 1.8V Output current: 1.2A Number of channels: 1 |
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| NCV8187AMLE280TCG | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 1.2A; DFNW8; SMD Case: DFNW8 Mounting: SMD Kind of package: reel; tape Application: automotive industry Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Output voltage: 2.8V Output current: 1.2A Number of channels: 1 |
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| NCV8187AMLEADJTCG | ONSEMI |
Category: LDO adjustable voltage regulators Description: IC: voltage regulator; LDO,linear,adjustable; 0.8÷5.2V; 1.2A Case: DFNW8 Mounting: SMD Kind of package: reel; tape Application: automotive industry Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; LDO; linear Output voltage: 0.8...5.2V Output current: 1.2A Number of channels: 1 |
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| FDMT800100DC | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 102A; Idm: 989A; 156W; DFNW8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 102A Pulsed drain current: 989A Power dissipation: 156W Case: DFNW8 Gate-source voltage: ±20V On-state resistance: 5.39mΩ Mounting: SMD Gate charge: 111nC Kind of package: reel; tape Kind of channel: enhancement |
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| FDMT800120DC | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 120V; 81A; Idm: 767A; 156W; DFNW8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 120V Drain current: 81A Pulsed drain current: 767A Power dissipation: 156W Case: DFNW8 Gate-source voltage: ±20V On-state resistance: 7.7mΩ Mounting: SMD Gate charge: 107nC Kind of package: reel; tape Kind of channel: enhancement |
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| FDMT800150DC | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 62A; Idm: 561A; 156W; DFNW8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 62A Pulsed drain current: 561A Power dissipation: 156W Case: DFNW8 Gate-source voltage: ±20V On-state resistance: 13mΩ Mounting: SMD Gate charge: 108nC Kind of package: reel; tape Kind of channel: enhancement |
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| FDMT800152DC | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 45A; Idm: 413A; 113W; DFNW8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 45A Pulsed drain current: 413A Power dissipation: 113W Case: DFNW8 Gate-source voltage: ±20V On-state resistance: 19mΩ Mounting: SMD Gate charge: 83nC Kind of package: reel; tape Kind of channel: enhancement |
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| FDMT80040DC | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 265A; Idm: 2644A; 156W; DFNW8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 265A Pulsed drain current: 2644A Power dissipation: 156W Case: DFNW8 Gate-source voltage: ±20V On-state resistance: 0.9mΩ Mounting: SMD Gate charge: 338nC Kind of package: reel; tape Kind of channel: enhancement |
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| FDMT80080DC | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 160A; Idm: 1453A; 156W; DFNW8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 160A Pulsed drain current: 1453A Power dissipation: 156W Case: DFNW8 Gate-source voltage: ±20V On-state resistance: 2.22mΩ Mounting: SMD Gate charge: 273nC Kind of package: reel; tape Kind of channel: enhancement |
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| NTMTS002N08MC | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 229A; Idm: 3577A; 208W; DFNW8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 229A Pulsed drain current: 3577A Power dissipation: 208W Case: DFNW8 Gate-source voltage: ±20V On-state resistance: 2mΩ Mounting: SMD Gate charge: 89nC Kind of package: reel; tape Kind of channel: enhancement |
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| NTMTS1D2N08H | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 335A; Idm: 900A; 150W; DFNW8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 335A Pulsed drain current: 900A Power dissipation: 150W Case: DFNW8 Gate-source voltage: ±20V On-state resistance: 1.1mΩ Mounting: SMD Gate charge: 147nC Kind of package: reel; tape Kind of channel: enhancement |
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| NTMTS1D5N08H | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 255A; Idm: 900A; 83W; DFNW8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 255A Pulsed drain current: 900A Power dissipation: 83W Case: DFNW8 Gate-source voltage: ±20V On-state resistance: 1.5mΩ Mounting: SMD Gate charge: 125nC Kind of package: reel; tape Kind of channel: enhancement |
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| NTMTS1D6N10MCTXG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 273A; Idm: 900A; 146W; DFNW8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 273A Pulsed drain current: 900A Power dissipation: 146W Case: DFNW8 Gate-source voltage: ±20V On-state resistance: 1.7mΩ Mounting: SMD Gate charge: 106nC Kind of package: reel; tape Kind of channel: enhancement |
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| NTMTS4D3N15MC | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 174A; Idm: 900A; 293W; DFNW8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 174A Pulsed drain current: 900A Power dissipation: 293W Case: DFNW8 Gate-source voltage: ±20V On-state resistance: 4.45mΩ Mounting: SMD Gate charge: 79nC Kind of package: reel; tape Kind of channel: enhancement |
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| NTMTSC1D5N08MC | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 287A; Idm: 3500A; 250W; DFNW8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 287A Pulsed drain current: 3500A Power dissipation: 250W Case: DFNW8 Gate-source voltage: ±20V On-state resistance: 1.56mΩ Mounting: SMD Gate charge: 101nC Kind of package: reel; tape Kind of channel: enhancement |
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| NVMTS001N06CTXG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 376A; Idm: 900A; 122W; DFNW8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 376A Pulsed drain current: 900A Power dissipation: 122W Case: DFNW8 Gate-source voltage: ±20V On-state resistance: 910µΩ Mounting: SMD Gate charge: 113nC Kind of package: reel; tape Kind of channel: enhancement |
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| NVMTS0D7N04CLTXG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 433A; Idm: 900A; 103W; DFNW8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 433A Pulsed drain current: 900A Power dissipation: 103W Case: DFNW8 Gate-source voltage: ±20V On-state resistance: 630µΩ Mounting: SMD Gate charge: 99nC Kind of package: reel; tape Kind of channel: enhancement |
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| NVMTS0D7N04CTXG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 420A; Idm: 900A; 103W; DFNW8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 420A Pulsed drain current: 900A Power dissipation: 103W Case: DFNW8 Gate-source voltage: ±20V On-state resistance: 670µΩ Mounting: SMD Gate charge: 0.14µC Kind of package: reel; tape Kind of channel: enhancement |
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| NVMTS1D5N08H | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 273A; Idm: 900A; 129W; DFNW8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 273A Pulsed drain current: 900A Power dissipation: 129W Case: DFNW8 Gate-source voltage: ±20V On-state resistance: 1.4mΩ Mounting: SMD Gate charge: 125nC Kind of package: reel; tape Kind of channel: enhancement |
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| NVMTS1D6N10MCTXG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 273A; Idm: 900A; 146W; DFNW8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 273A Pulsed drain current: 900A Power dissipation: 146W Case: DFNW8 Gate-source voltage: ±20V On-state resistance: 1.7mΩ Mounting: SMD Gate charge: 106nC Kind of package: reel; tape Kind of channel: enhancement |
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| MUN2112T1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 338mW; SC59; R1: 22kΩ Polarisation: bipolar Kind of transistor: BRT Case: SC59 Mounting: SMD Type of transistor: PNP Kind of package: reel; tape Collector current: 0.1A Power dissipation: 338mW Collector-emitter voltage: 50V Current gain: 60...100 Quantity in set/package: 3000pcs. Base-emitter resistor: 22kΩ Base resistor: 22kΩ |
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| MUN5112T1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 310mW; SC70,SOT323 Polarisation: bipolar Kind of transistor: BRT Case: SC70; SOT323 Mounting: SMD Type of transistor: PNP Kind of package: reel; tape Collector current: 0.1A Power dissipation: 0.31W Collector-emitter voltage: 50V Current gain: 60...100 Quantity in set/package: 3000pcs. Base-emitter resistor: 22kΩ Base resistor: 22kΩ |
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SMUN5112T1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.31W; SC70,SOT323 Application: automotive industry Polarisation: bipolar Kind of transistor: BRT Case: SC70; SOT323 Mounting: SMD Type of transistor: PNP Kind of package: reel; tape Collector current: 0.1A Power dissipation: 0.31W Collector-emitter voltage: 50V Base-emitter resistor: 22kΩ Base resistor: 22kΩ |
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| FNB41060B2 | ONSEMI |
Category: Power switches - integrated circuits Description: IC: driver; 10A; Uoper: 600V; Uinsul: 2kV; 32W Type of integrated circuit: driver Output current: 10A DC supply current: 3.65mA Mounting: THT Operating temperature: -40...150°C Operating voltage: 600V Insulation voltage: 2kV Power dissipation: 32W |
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BZX84C11LT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 11V; SMD; SOT23; reel,tape; single diode; BZX84C Type of diode: Zener Power dissipation: 0.3W Zener voltage: 11V Mounting: SMD Tolerance: ±5% Case: SOT23 Kind of package: reel; tape Semiconductor structure: single diode Manufacturer series: BZX84C |
на замовлення 499 шт: термін постачання 14-30 дні (днів) |
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| SZBZX84C11ET1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 11V; SMD; SOT23; reel,tape; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 11V Mounting: SMD Tolerance: ±5% Case: SOT23 Kind of package: reel; tape Semiconductor structure: single diode Manufacturer series: BZX84CxxET1G Application: automotive industry |
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| SZBZX84C11LT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 11V; SMD; SOT23; reel,tape; single diode; BZX84C Type of diode: Zener Power dissipation: 0.3W Zener voltage: 11V Mounting: SMD Tolerance: ±5% Case: SOT23 Kind of package: reel; tape Semiconductor structure: single diode Manufacturer series: BZX84C Application: automotive industry |
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MC10ELT20DG | ONSEMI |
Category: Level translators Description: IC: digital; logic level voltage translator; Ch: 1; SMD; SO8; tube Type of integrated circuit: digital Kind of integrated circuit: logic level voltage translator Number of channels: 1 Mounting: SMD Case: SO8 Operating temperature: -40...85°C Kind of package: tube Number of inputs: 1 Number of outputs: 2 Manufacturer series: 10ELT |
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MC10ELT25DG | ONSEMI |
Category: Level translators Description: IC: digital; non-inverting,logic level voltage translator; Ch: 1 Type of integrated circuit: digital Kind of integrated circuit: logic level voltage translator; non-inverting Number of channels: 1 Mounting: SMD Case: SO8 Operating temperature: -40...85°C Kind of package: tube Number of inputs: 2 Number of outputs: 1 Manufacturer series: 10ELT |
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MC10EPT20DTG | ONSEMI |
Category: Level translators Description: IC: digital; logic level voltage translator; Ch: 1; SMD; TSSOP8 Type of integrated circuit: digital Kind of integrated circuit: logic level voltage translator Number of channels: 1 Mounting: SMD Case: TSSOP8 Operating temperature: -40...85°C Kind of package: tube Number of inputs: 1 Number of outputs: 2 Manufacturer series: 10EPT |
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| MC10EP016FAG | ONSEMI |
Category: Counters/dividers Description: IC: digital; binary counter,up counter; IN: 8; ECL; SMD; -40÷70°C Type of integrated circuit: digital Kind of integrated circuit: binary counter; up counter Mounting: SMD Operating temperature: -40...70°C Number of inputs: 8 Number of outputs: 8 Technology: ECL Trigger: positive-edge-triggered Supply voltage: 3...3.6V |
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| MC10EL01DG | ONSEMI |
Category: Gates, inverters Description: IC: digital; NOR,OR; Ch: 1; IN: 4; ECL; SMD; SOIC8; -40÷85°C; OUT: 2 Type of integrated circuit: digital Number of channels: 1 Mounting: SMD Case: SOIC8 Operating temperature: -40...85°C Number of inputs: 4 Number of outputs: 2 Kind of gate: NOR; OR Technology: ECL Supply voltage: 4.2...5.7V |
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| MC10EP08DTG | ONSEMI |
Category: Gates, inverters Description: IC: digital; XOR; Ch: 1; IN: 4; ECL; SMD; TSSOP8; -40÷85°C; OUT: 2 Type of integrated circuit: digital Number of channels: 1 Mounting: SMD Case: TSSOP8 Operating temperature: -40...85°C Number of inputs: 4 Number of outputs: 2 Kind of gate: XOR Technology: ECL Supply voltage: 3...5.5V |
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| MC10EL04DG | ONSEMI |
Category: Gates, inverters Description: IC: digital; NAND; Ch: 1; IN: 2; ECL; SMD; SOIC8; -40÷85°C; OUT: 2 Type of integrated circuit: digital Number of channels: 1 Mounting: SMD Case: SOIC8 Operating temperature: -40...85°C Number of inputs: 2 Number of outputs: 2 Kind of gate: NAND Technology: ECL Supply voltage: 4.2...5.7V |
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| MC10EL05DR2G | ONSEMI |
Category: Gates, inverters Description: IC: digital; NAND; Ch: 1; IN: 4; ECL; SMD; SOIC8; -40÷85°C; OUT: 2 Type of integrated circuit: digital Number of channels: 1 Mounting: SMD Case: SOIC8 Operating temperature: -40...85°C Number of inputs: 4 Number of outputs: 2 Kind of gate: NAND Technology: ECL Supply voltage: 4.2...5.7V |
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| MC10EL11DG | ONSEMI |
Category: Other logic integrated circuits Description: IC: digital; fanout buffer; Ch: 1; ECL; SMD; SOIC8; 4.2÷5.7V; OUT: 2 Type of integrated circuit: digital Kind of integrated circuit: fanout buffer Number of channels: 1 Mounting: SMD Case: SOIC8 Operating temperature: -40...85°C Number of outputs: 2 Kind of input: differential Technology: ECL Supply voltage: 4.2...5.7V |
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| MC10EL16DG | ONSEMI |
Category: Integrated circuits - Unclassified Description: IC: digital Type of integrated circuit: digital |
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MC10EL16DR2G | ONSEMI |
Category: Other logic integrated circuits Description: IC: digital; receiver,differential; Ch: 1; 4.2÷5.7VDC; SMD; SO8 Type of integrated circuit: digital Kind of integrated circuit: differential; receiver Number of channels: 1 Mounting: SMD Case: SO8 Operating temperature: -40...85°C Kind of package: reel; tape Supply voltage: 4.2...5.7V DC |
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| MC10EL31DG | ONSEMI |
Category: Flip-Flops Description: IC: digital Type of integrated circuit: digital |
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| MC10EL31DR2G | ONSEMI |
Category: Flip-Flops Description: IC: digital; D flip-flop; Ch: 1; IN: 1; ECL; SMD; SOIC8; 32mA; OUT: 1 Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 1 Mounting: SMD Case: SOIC8 Operating temperature: -40...85°C Number of inputs: 1 Number of outputs: 1 Clock frequency: 2.8GHz Kind of gate: AND Kind of output: complementary Kind of input: single-ended Technology: ECL Trigger: positive-edge-triggered Supply voltage: -5.7...-4.2V Quiescent current: 32mA |
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| MC10EL32DR2G | ONSEMI |
Category: Other logic integrated circuits Description: IC: digital; ECL; SMD; SOIC8; 4.2÷5.7V; OUT: 1 Type of integrated circuit: digital Mounting: SMD Case: SOIC8 Operating temperature: -40...85°C Number of outputs: 1 Technology: ECL Trigger: positive-edge-triggered Supply voltage: 4.2...5.7V |
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| MC10EL52DG | ONSEMI |
Category: Flip-Flops Description: IC: digital; D flip-flop; Ch: 1; IN: 1; ECL; SMD; SOIC8; 25mA; OUT: 1 Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 1 Mounting: SMD Case: SOIC8 Operating temperature: -40...85°C Number of inputs: 1 Number of outputs: 1 Clock frequency: 2.8GHz Kind of output: complementary Kind of input: differential Technology: ECL Trigger: positive-edge-triggered Supply voltage: -5.7...-4.2V Quiescent current: 25mA |
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| MC10EL57DR2G | ONSEMI |
Category: Decoders, multiplexers, switches Description: IC: digital; multiplexer; Ch: 1; IN: 4; ECL; SMD; SOIC16; -40÷85°C Type of integrated circuit: digital Kind of integrated circuit: multiplexer Number of channels: 1 Mounting: SMD Case: SOIC16 Operating temperature: -40...85°C Number of inputs: 4 Number of outputs: 1 Technology: ECL Supply voltage: 4.2...5.7V |
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| MC10EL89DG | ONSEMI |
Category: Other logic integrated circuits Description: IC: driver; ECL; SOIC8; Ch: 1; 4.2÷5.7V Type of integrated circuit: driver Number of channels: 1 Mounting: SMD Case: SOIC8 Operating temperature: -40...85°C Technology: ECL Supply voltage: 4.2...5.7V |
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| MC10EL89DR2G | ONSEMI |
Category: Other logic integrated circuits Description: IC: driver; ECL; SOIC8; Ch: 1; 4.2÷5.7V Type of integrated circuit: driver Number of channels: 1 Mounting: SMD Case: SOIC8 Operating temperature: -40...85°C Technology: ECL Supply voltage: 4.2...5.7V |
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MC10ELT21DG | ONSEMI |
Category: Level translators Description: IC: digital; non-inverting,logic level voltage translator; Ch: 1 Type of integrated circuit: digital Kind of integrated circuit: logic level voltage translator; non-inverting Number of channels: 1 Mounting: SMD Case: SO8 Operating temperature: -40...85°C Kind of package: tube Number of inputs: 2 Number of outputs: 1 Manufacturer series: 10ELT |
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MC10ELT22DG | ONSEMI |
Category: Level translators Description: IC: digital; logic level voltage translator; Ch: 2; SMD; SO8; tube Type of integrated circuit: digital Kind of integrated circuit: logic level voltage translator Number of channels: 2 Mounting: SMD Case: SO8 Operating temperature: -40...85°C Kind of package: tube Number of inputs: 2 Number of outputs: 4 Manufacturer series: 10ELT |
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MC10ELT24DG | ONSEMI |
Category: Level translators Description: IC: digital; logic level voltage translator; Ch: 1; SMD; SO8; tube Type of integrated circuit: digital Kind of integrated circuit: logic level voltage translator Number of channels: 1 Mounting: SMD Case: SO8 Operating temperature: -40...85°C Kind of package: tube Number of inputs: 1 Number of outputs: 2 Manufacturer series: 10ELT |
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MC10ELT25DR2G | ONSEMI |
Category: Level translators Description: IC: digital; non-inverting,logic level voltage translator; Ch: 1 Type of integrated circuit: digital Kind of integrated circuit: logic level voltage translator; non-inverting Number of channels: 1 Mounting: SMD Case: SO8 Operating temperature: -40...85°C Kind of package: reel; tape Number of inputs: 2 Number of outputs: 1 Manufacturer series: 10ELT |
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| MC10EP05DG | ONSEMI |
Category: Gates, inverters Description: IC: digital; NAND; Ch: 1; IN: 4; ECL; SMD; SOIC8; -40÷85°C; 29mA; OUT: 2 Type of integrated circuit: digital Number of channels: 1 Mounting: SMD Case: SOIC8 Operating temperature: -40...85°C Number of inputs: 4 Number of outputs: 2 Kind of gate: NAND Technology: ECL Supply voltage: 3...5.5V Quiescent current: 29mA |
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| FDWS86068-F085 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 214W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80A
Power dissipation: 214W
Case: DFNW8
Gate-source voltage: ±20V
On-state resistance: 6.4mΩ
Mounting: SMD
Gate charge: 31nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 214W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80A
Power dissipation: 214W
Case: DFNW8
Gate-source voltage: ±20V
On-state resistance: 6.4mΩ
Mounting: SMD
Gate charge: 31nC
Kind of package: reel; tape
Kind of channel: enhancement
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| FDWS86369-F085 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 65A; 107W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 65A
Power dissipation: 107W
Case: DFNW8
Gate-source voltage: ±20V
On-state resistance: 7.5mΩ
Mounting: SMD
Gate charge: 35nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 65A; 107W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 65A
Power dissipation: 107W
Case: DFNW8
Gate-source voltage: ±20V
On-state resistance: 7.5mΩ
Mounting: SMD
Gate charge: 35nC
Kind of package: reel; tape
Kind of channel: enhancement
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| FDWS86380-F085 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 50A; 75W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 50A
Power dissipation: 75W
Case: DFNW8
Gate-source voltage: ±20V
On-state resistance: 13.4mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 50A; 75W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 50A
Power dissipation: 75W
Case: DFNW8
Gate-source voltage: ±20V
On-state resistance: 13.4mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
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| NCV8164AML120TCG |
|
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 0.3A; DFNW8; SMD
Case: DFNW8
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 1.2V
Output current: 0.3A
Number of channels: 1
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 0.3A; DFNW8; SMD
Case: DFNW8
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 1.2V
Output current: 0.3A
Number of channels: 1
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| NCV8164AML150TCG |
|
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.5V; 0.3A; DFNW8; SMD
Case: DFNW8
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 1.5V
Output current: 0.3A
Number of channels: 1
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.5V; 0.3A; DFNW8; SMD
Case: DFNW8
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 1.5V
Output current: 0.3A
Number of channels: 1
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| NCV8164AML180TCG |
|
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.3A; DFNW8; SMD
Case: DFNW8
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 1.8V
Output current: 0.3A
Number of channels: 1
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.3A; DFNW8; SMD
Case: DFNW8
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 1.8V
Output current: 0.3A
Number of channels: 1
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| NCV8164AML250TCG |
|
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 0.3A; DFNW8; SMD
Case: DFNW8
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 2.5V
Output current: 0.3A
Number of channels: 1
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 0.3A; DFNW8; SMD
Case: DFNW8
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 2.5V
Output current: 0.3A
Number of channels: 1
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В кошику
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| NCV8164AML330TCG |
|
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.3A; DFNW8; SMD
Case: DFNW8
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3.3V
Output current: 0.3A
Number of channels: 1
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.3A; DFNW8; SMD
Case: DFNW8
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3.3V
Output current: 0.3A
Number of channels: 1
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| NCV8164AMLADJTCG |
|
Виробник: ONSEMI
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; -0.3÷6.3V; 0.3A
Case: DFNW8
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Output voltage: -0.3...6.3V
Output current: 0.3A
Number of channels: 1
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; -0.3÷6.3V; 0.3A
Case: DFNW8
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Output voltage: -0.3...6.3V
Output current: 0.3A
Number of channels: 1
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| NCV8165ML330TCG |
|
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.5A; DFNW8; SMD
Case: DFNW8
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3.3V
Output current: 0.5A
Number of channels: 1
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.5A; DFNW8; SMD
Case: DFNW8
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3.3V
Output current: 0.5A
Number of channels: 1
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| NCV8187AMLE180TCG |
|
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 1.2A; DFNW8; SMD
Case: DFNW8
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 1.8V
Output current: 1.2A
Number of channels: 1
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 1.2A; DFNW8; SMD
Case: DFNW8
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 1.8V
Output current: 1.2A
Number of channels: 1
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| NCV8187AMLE280TCG |
|
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 1.2A; DFNW8; SMD
Case: DFNW8
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 2.8V
Output current: 1.2A
Number of channels: 1
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 1.2A; DFNW8; SMD
Case: DFNW8
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 2.8V
Output current: 1.2A
Number of channels: 1
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| NCV8187AMLEADJTCG |
|
Виробник: ONSEMI
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 0.8÷5.2V; 1.2A
Case: DFNW8
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Output voltage: 0.8...5.2V
Output current: 1.2A
Number of channels: 1
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 0.8÷5.2V; 1.2A
Case: DFNW8
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Output voltage: 0.8...5.2V
Output current: 1.2A
Number of channels: 1
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| FDMT800100DC |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 102A; Idm: 989A; 156W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 102A
Pulsed drain current: 989A
Power dissipation: 156W
Case: DFNW8
Gate-source voltage: ±20V
On-state resistance: 5.39mΩ
Mounting: SMD
Gate charge: 111nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 102A; Idm: 989A; 156W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 102A
Pulsed drain current: 989A
Power dissipation: 156W
Case: DFNW8
Gate-source voltage: ±20V
On-state resistance: 5.39mΩ
Mounting: SMD
Gate charge: 111nC
Kind of package: reel; tape
Kind of channel: enhancement
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| FDMT800120DC |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 81A; Idm: 767A; 156W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 81A
Pulsed drain current: 767A
Power dissipation: 156W
Case: DFNW8
Gate-source voltage: ±20V
On-state resistance: 7.7mΩ
Mounting: SMD
Gate charge: 107nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 81A; Idm: 767A; 156W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 81A
Pulsed drain current: 767A
Power dissipation: 156W
Case: DFNW8
Gate-source voltage: ±20V
On-state resistance: 7.7mΩ
Mounting: SMD
Gate charge: 107nC
Kind of package: reel; tape
Kind of channel: enhancement
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| FDMT800150DC |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 62A; Idm: 561A; 156W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 62A
Pulsed drain current: 561A
Power dissipation: 156W
Case: DFNW8
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: SMD
Gate charge: 108nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 62A; Idm: 561A; 156W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 62A
Pulsed drain current: 561A
Power dissipation: 156W
Case: DFNW8
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: SMD
Gate charge: 108nC
Kind of package: reel; tape
Kind of channel: enhancement
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| FDMT800152DC |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 45A; Idm: 413A; 113W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 45A
Pulsed drain current: 413A
Power dissipation: 113W
Case: DFNW8
Gate-source voltage: ±20V
On-state resistance: 19mΩ
Mounting: SMD
Gate charge: 83nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 45A; Idm: 413A; 113W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 45A
Pulsed drain current: 413A
Power dissipation: 113W
Case: DFNW8
Gate-source voltage: ±20V
On-state resistance: 19mΩ
Mounting: SMD
Gate charge: 83nC
Kind of package: reel; tape
Kind of channel: enhancement
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| FDMT80040DC |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 265A; Idm: 2644A; 156W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 265A
Pulsed drain current: 2644A
Power dissipation: 156W
Case: DFNW8
Gate-source voltage: ±20V
On-state resistance: 0.9mΩ
Mounting: SMD
Gate charge: 338nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 265A; Idm: 2644A; 156W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 265A
Pulsed drain current: 2644A
Power dissipation: 156W
Case: DFNW8
Gate-source voltage: ±20V
On-state resistance: 0.9mΩ
Mounting: SMD
Gate charge: 338nC
Kind of package: reel; tape
Kind of channel: enhancement
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| FDMT80080DC |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 160A; Idm: 1453A; 156W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 160A
Pulsed drain current: 1453A
Power dissipation: 156W
Case: DFNW8
Gate-source voltage: ±20V
On-state resistance: 2.22mΩ
Mounting: SMD
Gate charge: 273nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 160A; Idm: 1453A; 156W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 160A
Pulsed drain current: 1453A
Power dissipation: 156W
Case: DFNW8
Gate-source voltage: ±20V
On-state resistance: 2.22mΩ
Mounting: SMD
Gate charge: 273nC
Kind of package: reel; tape
Kind of channel: enhancement
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| NTMTS002N08MC |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 229A; Idm: 3577A; 208W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 229A
Pulsed drain current: 3577A
Power dissipation: 208W
Case: DFNW8
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Gate charge: 89nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 229A; Idm: 3577A; 208W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 229A
Pulsed drain current: 3577A
Power dissipation: 208W
Case: DFNW8
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Gate charge: 89nC
Kind of package: reel; tape
Kind of channel: enhancement
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| NTMTS1D2N08H |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 335A; Idm: 900A; 150W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 335A
Pulsed drain current: 900A
Power dissipation: 150W
Case: DFNW8
Gate-source voltage: ±20V
On-state resistance: 1.1mΩ
Mounting: SMD
Gate charge: 147nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 335A; Idm: 900A; 150W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 335A
Pulsed drain current: 900A
Power dissipation: 150W
Case: DFNW8
Gate-source voltage: ±20V
On-state resistance: 1.1mΩ
Mounting: SMD
Gate charge: 147nC
Kind of package: reel; tape
Kind of channel: enhancement
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| NTMTS1D5N08H |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 255A; Idm: 900A; 83W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 255A
Pulsed drain current: 900A
Power dissipation: 83W
Case: DFNW8
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: SMD
Gate charge: 125nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 255A; Idm: 900A; 83W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 255A
Pulsed drain current: 900A
Power dissipation: 83W
Case: DFNW8
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: SMD
Gate charge: 125nC
Kind of package: reel; tape
Kind of channel: enhancement
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| NTMTS1D6N10MCTXG |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 273A; Idm: 900A; 146W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 273A
Pulsed drain current: 900A
Power dissipation: 146W
Case: DFNW8
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: SMD
Gate charge: 106nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 273A; Idm: 900A; 146W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 273A
Pulsed drain current: 900A
Power dissipation: 146W
Case: DFNW8
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: SMD
Gate charge: 106nC
Kind of package: reel; tape
Kind of channel: enhancement
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| NTMTS4D3N15MC |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 174A; Idm: 900A; 293W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 174A
Pulsed drain current: 900A
Power dissipation: 293W
Case: DFNW8
Gate-source voltage: ±20V
On-state resistance: 4.45mΩ
Mounting: SMD
Gate charge: 79nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 174A; Idm: 900A; 293W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 174A
Pulsed drain current: 900A
Power dissipation: 293W
Case: DFNW8
Gate-source voltage: ±20V
On-state resistance: 4.45mΩ
Mounting: SMD
Gate charge: 79nC
Kind of package: reel; tape
Kind of channel: enhancement
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| NTMTSC1D5N08MC |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 287A; Idm: 3500A; 250W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 287A
Pulsed drain current: 3500A
Power dissipation: 250W
Case: DFNW8
Gate-source voltage: ±20V
On-state resistance: 1.56mΩ
Mounting: SMD
Gate charge: 101nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 287A; Idm: 3500A; 250W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 287A
Pulsed drain current: 3500A
Power dissipation: 250W
Case: DFNW8
Gate-source voltage: ±20V
On-state resistance: 1.56mΩ
Mounting: SMD
Gate charge: 101nC
Kind of package: reel; tape
Kind of channel: enhancement
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| NVMTS001N06CTXG |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 376A; Idm: 900A; 122W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 376A
Pulsed drain current: 900A
Power dissipation: 122W
Case: DFNW8
Gate-source voltage: ±20V
On-state resistance: 910µΩ
Mounting: SMD
Gate charge: 113nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 376A; Idm: 900A; 122W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 376A
Pulsed drain current: 900A
Power dissipation: 122W
Case: DFNW8
Gate-source voltage: ±20V
On-state resistance: 910µΩ
Mounting: SMD
Gate charge: 113nC
Kind of package: reel; tape
Kind of channel: enhancement
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| NVMTS0D7N04CLTXG |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 433A; Idm: 900A; 103W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 433A
Pulsed drain current: 900A
Power dissipation: 103W
Case: DFNW8
Gate-source voltage: ±20V
On-state resistance: 630µΩ
Mounting: SMD
Gate charge: 99nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 433A; Idm: 900A; 103W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 433A
Pulsed drain current: 900A
Power dissipation: 103W
Case: DFNW8
Gate-source voltage: ±20V
On-state resistance: 630µΩ
Mounting: SMD
Gate charge: 99nC
Kind of package: reel; tape
Kind of channel: enhancement
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| NVMTS0D7N04CTXG |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 420A; Idm: 900A; 103W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 420A
Pulsed drain current: 900A
Power dissipation: 103W
Case: DFNW8
Gate-source voltage: ±20V
On-state resistance: 670µΩ
Mounting: SMD
Gate charge: 0.14µC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 420A; Idm: 900A; 103W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 420A
Pulsed drain current: 900A
Power dissipation: 103W
Case: DFNW8
Gate-source voltage: ±20V
On-state resistance: 670µΩ
Mounting: SMD
Gate charge: 0.14µC
Kind of package: reel; tape
Kind of channel: enhancement
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| NVMTS1D5N08H |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 273A; Idm: 900A; 129W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 273A
Pulsed drain current: 900A
Power dissipation: 129W
Case: DFNW8
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Gate charge: 125nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 273A; Idm: 900A; 129W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 273A
Pulsed drain current: 900A
Power dissipation: 129W
Case: DFNW8
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Gate charge: 125nC
Kind of package: reel; tape
Kind of channel: enhancement
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| NVMTS1D6N10MCTXG |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 273A; Idm: 900A; 146W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 273A
Pulsed drain current: 900A
Power dissipation: 146W
Case: DFNW8
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: SMD
Gate charge: 106nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 273A; Idm: 900A; 146W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 273A
Pulsed drain current: 900A
Power dissipation: 146W
Case: DFNW8
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: SMD
Gate charge: 106nC
Kind of package: reel; tape
Kind of channel: enhancement
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| MUN2112T1G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 338mW; SC59; R1: 22kΩ
Polarisation: bipolar
Kind of transistor: BRT
Case: SC59
Mounting: SMD
Type of transistor: PNP
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 338mW
Collector-emitter voltage: 50V
Current gain: 60...100
Quantity in set/package: 3000pcs.
Base-emitter resistor: 22kΩ
Base resistor: 22kΩ
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 338mW; SC59; R1: 22kΩ
Polarisation: bipolar
Kind of transistor: BRT
Case: SC59
Mounting: SMD
Type of transistor: PNP
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 338mW
Collector-emitter voltage: 50V
Current gain: 60...100
Quantity in set/package: 3000pcs.
Base-emitter resistor: 22kΩ
Base resistor: 22kΩ
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| MUN5112T1G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 310mW; SC70,SOT323
Polarisation: bipolar
Kind of transistor: BRT
Case: SC70; SOT323
Mounting: SMD
Type of transistor: PNP
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.31W
Collector-emitter voltage: 50V
Current gain: 60...100
Quantity in set/package: 3000pcs.
Base-emitter resistor: 22kΩ
Base resistor: 22kΩ
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 310mW; SC70,SOT323
Polarisation: bipolar
Kind of transistor: BRT
Case: SC70; SOT323
Mounting: SMD
Type of transistor: PNP
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.31W
Collector-emitter voltage: 50V
Current gain: 60...100
Quantity in set/package: 3000pcs.
Base-emitter resistor: 22kΩ
Base resistor: 22kΩ
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| SMUN5112T1G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.31W; SC70,SOT323
Application: automotive industry
Polarisation: bipolar
Kind of transistor: BRT
Case: SC70; SOT323
Mounting: SMD
Type of transistor: PNP
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.31W
Collector-emitter voltage: 50V
Base-emitter resistor: 22kΩ
Base resistor: 22kΩ
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.31W; SC70,SOT323
Application: automotive industry
Polarisation: bipolar
Kind of transistor: BRT
Case: SC70; SOT323
Mounting: SMD
Type of transistor: PNP
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.31W
Collector-emitter voltage: 50V
Base-emitter resistor: 22kΩ
Base resistor: 22kΩ
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| FNB41060B2 |
|
Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: driver; 10A; Uoper: 600V; Uinsul: 2kV; 32W
Type of integrated circuit: driver
Output current: 10A
DC supply current: 3.65mA
Mounting: THT
Operating temperature: -40...150°C
Operating voltage: 600V
Insulation voltage: 2kV
Power dissipation: 32W
Category: Power switches - integrated circuits
Description: IC: driver; 10A; Uoper: 600V; Uinsul: 2kV; 32W
Type of integrated circuit: driver
Output current: 10A
DC supply current: 3.65mA
Mounting: THT
Operating temperature: -40...150°C
Operating voltage: 600V
Insulation voltage: 2kV
Power dissipation: 32W
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| BZX84C11LT1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 11V; SMD; SOT23; reel,tape; single diode; BZX84C
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 11V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: BZX84C
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 11V; SMD; SOT23; reel,tape; single diode; BZX84C
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 11V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: BZX84C
на замовлення 499 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 72+ | 6.30 грн |
| 100+ | 4.18 грн |
| 117+ | 3.59 грн |
| 212+ | 1.97 грн |
| 264+ | 1.59 грн |
| SZBZX84C11ET1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 11V; SMD; SOT23; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 11V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: BZX84CxxET1G
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 11V; SMD; SOT23; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 11V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: BZX84CxxET1G
Application: automotive industry
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| SZBZX84C11LT1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 11V; SMD; SOT23; reel,tape; single diode; BZX84C
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 11V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: BZX84C
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 11V; SMD; SOT23; reel,tape; single diode; BZX84C
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 11V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: BZX84C
Application: automotive industry
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| MC10ELT20DG |
|
Виробник: ONSEMI
Category: Level translators
Description: IC: digital; logic level voltage translator; Ch: 1; SMD; SO8; tube
Type of integrated circuit: digital
Kind of integrated circuit: logic level voltage translator
Number of channels: 1
Mounting: SMD
Case: SO8
Operating temperature: -40...85°C
Kind of package: tube
Number of inputs: 1
Number of outputs: 2
Manufacturer series: 10ELT
Category: Level translators
Description: IC: digital; logic level voltage translator; Ch: 1; SMD; SO8; tube
Type of integrated circuit: digital
Kind of integrated circuit: logic level voltage translator
Number of channels: 1
Mounting: SMD
Case: SO8
Operating temperature: -40...85°C
Kind of package: tube
Number of inputs: 1
Number of outputs: 2
Manufacturer series: 10ELT
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| MC10ELT25DG |
|
Виробник: ONSEMI
Category: Level translators
Description: IC: digital; non-inverting,logic level voltage translator; Ch: 1
Type of integrated circuit: digital
Kind of integrated circuit: logic level voltage translator; non-inverting
Number of channels: 1
Mounting: SMD
Case: SO8
Operating temperature: -40...85°C
Kind of package: tube
Number of inputs: 2
Number of outputs: 1
Manufacturer series: 10ELT
Category: Level translators
Description: IC: digital; non-inverting,logic level voltage translator; Ch: 1
Type of integrated circuit: digital
Kind of integrated circuit: logic level voltage translator; non-inverting
Number of channels: 1
Mounting: SMD
Case: SO8
Operating temperature: -40...85°C
Kind of package: tube
Number of inputs: 2
Number of outputs: 1
Manufacturer series: 10ELT
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| MC10EPT20DTG |
|
Виробник: ONSEMI
Category: Level translators
Description: IC: digital; logic level voltage translator; Ch: 1; SMD; TSSOP8
Type of integrated circuit: digital
Kind of integrated circuit: logic level voltage translator
Number of channels: 1
Mounting: SMD
Case: TSSOP8
Operating temperature: -40...85°C
Kind of package: tube
Number of inputs: 1
Number of outputs: 2
Manufacturer series: 10EPT
Category: Level translators
Description: IC: digital; logic level voltage translator; Ch: 1; SMD; TSSOP8
Type of integrated circuit: digital
Kind of integrated circuit: logic level voltage translator
Number of channels: 1
Mounting: SMD
Case: TSSOP8
Operating temperature: -40...85°C
Kind of package: tube
Number of inputs: 1
Number of outputs: 2
Manufacturer series: 10EPT
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| MC10EP016FAG |
|
Виробник: ONSEMI
Category: Counters/dividers
Description: IC: digital; binary counter,up counter; IN: 8; ECL; SMD; -40÷70°C
Type of integrated circuit: digital
Kind of integrated circuit: binary counter; up counter
Mounting: SMD
Operating temperature: -40...70°C
Number of inputs: 8
Number of outputs: 8
Technology: ECL
Trigger: positive-edge-triggered
Supply voltage: 3...3.6V
Category: Counters/dividers
Description: IC: digital; binary counter,up counter; IN: 8; ECL; SMD; -40÷70°C
Type of integrated circuit: digital
Kind of integrated circuit: binary counter; up counter
Mounting: SMD
Operating temperature: -40...70°C
Number of inputs: 8
Number of outputs: 8
Technology: ECL
Trigger: positive-edge-triggered
Supply voltage: 3...3.6V
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| MC10EL01DG |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOR,OR; Ch: 1; IN: 4; ECL; SMD; SOIC8; -40÷85°C; OUT: 2
Type of integrated circuit: digital
Number of channels: 1
Mounting: SMD
Case: SOIC8
Operating temperature: -40...85°C
Number of inputs: 4
Number of outputs: 2
Kind of gate: NOR; OR
Technology: ECL
Supply voltage: 4.2...5.7V
Category: Gates, inverters
Description: IC: digital; NOR,OR; Ch: 1; IN: 4; ECL; SMD; SOIC8; -40÷85°C; OUT: 2
Type of integrated circuit: digital
Number of channels: 1
Mounting: SMD
Case: SOIC8
Operating temperature: -40...85°C
Number of inputs: 4
Number of outputs: 2
Kind of gate: NOR; OR
Technology: ECL
Supply voltage: 4.2...5.7V
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| MC10EP08DTG |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 1; IN: 4; ECL; SMD; TSSOP8; -40÷85°C; OUT: 2
Type of integrated circuit: digital
Number of channels: 1
Mounting: SMD
Case: TSSOP8
Operating temperature: -40...85°C
Number of inputs: 4
Number of outputs: 2
Kind of gate: XOR
Technology: ECL
Supply voltage: 3...5.5V
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 1; IN: 4; ECL; SMD; TSSOP8; -40÷85°C; OUT: 2
Type of integrated circuit: digital
Number of channels: 1
Mounting: SMD
Case: TSSOP8
Operating temperature: -40...85°C
Number of inputs: 4
Number of outputs: 2
Kind of gate: XOR
Technology: ECL
Supply voltage: 3...5.5V
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| MC10EL04DG |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; ECL; SMD; SOIC8; -40÷85°C; OUT: 2
Type of integrated circuit: digital
Number of channels: 1
Mounting: SMD
Case: SOIC8
Operating temperature: -40...85°C
Number of inputs: 2
Number of outputs: 2
Kind of gate: NAND
Technology: ECL
Supply voltage: 4.2...5.7V
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; ECL; SMD; SOIC8; -40÷85°C; OUT: 2
Type of integrated circuit: digital
Number of channels: 1
Mounting: SMD
Case: SOIC8
Operating temperature: -40...85°C
Number of inputs: 2
Number of outputs: 2
Kind of gate: NAND
Technology: ECL
Supply voltage: 4.2...5.7V
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| MC10EL05DR2G |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 4; ECL; SMD; SOIC8; -40÷85°C; OUT: 2
Type of integrated circuit: digital
Number of channels: 1
Mounting: SMD
Case: SOIC8
Operating temperature: -40...85°C
Number of inputs: 4
Number of outputs: 2
Kind of gate: NAND
Technology: ECL
Supply voltage: 4.2...5.7V
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 4; ECL; SMD; SOIC8; -40÷85°C; OUT: 2
Type of integrated circuit: digital
Number of channels: 1
Mounting: SMD
Case: SOIC8
Operating temperature: -40...85°C
Number of inputs: 4
Number of outputs: 2
Kind of gate: NAND
Technology: ECL
Supply voltage: 4.2...5.7V
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| MC10EL11DG |
|
Виробник: ONSEMI
Category: Other logic integrated circuits
Description: IC: digital; fanout buffer; Ch: 1; ECL; SMD; SOIC8; 4.2÷5.7V; OUT: 2
Type of integrated circuit: digital
Kind of integrated circuit: fanout buffer
Number of channels: 1
Mounting: SMD
Case: SOIC8
Operating temperature: -40...85°C
Number of outputs: 2
Kind of input: differential
Technology: ECL
Supply voltage: 4.2...5.7V
Category: Other logic integrated circuits
Description: IC: digital; fanout buffer; Ch: 1; ECL; SMD; SOIC8; 4.2÷5.7V; OUT: 2
Type of integrated circuit: digital
Kind of integrated circuit: fanout buffer
Number of channels: 1
Mounting: SMD
Case: SOIC8
Operating temperature: -40...85°C
Number of outputs: 2
Kind of input: differential
Technology: ECL
Supply voltage: 4.2...5.7V
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| MC10EL16DG |
|
Виробник: ONSEMI
Category: Integrated circuits - Unclassified
Description: IC: digital
Type of integrated circuit: digital
Category: Integrated circuits - Unclassified
Description: IC: digital
Type of integrated circuit: digital
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| MC10EL16DR2G |
|
Виробник: ONSEMI
Category: Other logic integrated circuits
Description: IC: digital; receiver,differential; Ch: 1; 4.2÷5.7VDC; SMD; SO8
Type of integrated circuit: digital
Kind of integrated circuit: differential; receiver
Number of channels: 1
Mounting: SMD
Case: SO8
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 4.2...5.7V DC
Category: Other logic integrated circuits
Description: IC: digital; receiver,differential; Ch: 1; 4.2÷5.7VDC; SMD; SO8
Type of integrated circuit: digital
Kind of integrated circuit: differential; receiver
Number of channels: 1
Mounting: SMD
Case: SO8
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 4.2...5.7V DC
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| MC10EL31DR2G |
|
Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 1; IN: 1; ECL; SMD; SOIC8; 32mA; OUT: 1
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 1
Mounting: SMD
Case: SOIC8
Operating temperature: -40...85°C
Number of inputs: 1
Number of outputs: 1
Clock frequency: 2.8GHz
Kind of gate: AND
Kind of output: complementary
Kind of input: single-ended
Technology: ECL
Trigger: positive-edge-triggered
Supply voltage: -5.7...-4.2V
Quiescent current: 32mA
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 1; IN: 1; ECL; SMD; SOIC8; 32mA; OUT: 1
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 1
Mounting: SMD
Case: SOIC8
Operating temperature: -40...85°C
Number of inputs: 1
Number of outputs: 1
Clock frequency: 2.8GHz
Kind of gate: AND
Kind of output: complementary
Kind of input: single-ended
Technology: ECL
Trigger: positive-edge-triggered
Supply voltage: -5.7...-4.2V
Quiescent current: 32mA
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| MC10EL32DR2G |
|
Виробник: ONSEMI
Category: Other logic integrated circuits
Description: IC: digital; ECL; SMD; SOIC8; 4.2÷5.7V; OUT: 1
Type of integrated circuit: digital
Mounting: SMD
Case: SOIC8
Operating temperature: -40...85°C
Number of outputs: 1
Technology: ECL
Trigger: positive-edge-triggered
Supply voltage: 4.2...5.7V
Category: Other logic integrated circuits
Description: IC: digital; ECL; SMD; SOIC8; 4.2÷5.7V; OUT: 1
Type of integrated circuit: digital
Mounting: SMD
Case: SOIC8
Operating temperature: -40...85°C
Number of outputs: 1
Technology: ECL
Trigger: positive-edge-triggered
Supply voltage: 4.2...5.7V
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| MC10EL52DG |
|
Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 1; IN: 1; ECL; SMD; SOIC8; 25mA; OUT: 1
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 1
Mounting: SMD
Case: SOIC8
Operating temperature: -40...85°C
Number of inputs: 1
Number of outputs: 1
Clock frequency: 2.8GHz
Kind of output: complementary
Kind of input: differential
Technology: ECL
Trigger: positive-edge-triggered
Supply voltage: -5.7...-4.2V
Quiescent current: 25mA
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 1; IN: 1; ECL; SMD; SOIC8; 25mA; OUT: 1
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 1
Mounting: SMD
Case: SOIC8
Operating temperature: -40...85°C
Number of inputs: 1
Number of outputs: 1
Clock frequency: 2.8GHz
Kind of output: complementary
Kind of input: differential
Technology: ECL
Trigger: positive-edge-triggered
Supply voltage: -5.7...-4.2V
Quiescent current: 25mA
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| MC10EL57DR2G |
|
Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; multiplexer; Ch: 1; IN: 4; ECL; SMD; SOIC16; -40÷85°C
Type of integrated circuit: digital
Kind of integrated circuit: multiplexer
Number of channels: 1
Mounting: SMD
Case: SOIC16
Operating temperature: -40...85°C
Number of inputs: 4
Number of outputs: 1
Technology: ECL
Supply voltage: 4.2...5.7V
Category: Decoders, multiplexers, switches
Description: IC: digital; multiplexer; Ch: 1; IN: 4; ECL; SMD; SOIC16; -40÷85°C
Type of integrated circuit: digital
Kind of integrated circuit: multiplexer
Number of channels: 1
Mounting: SMD
Case: SOIC16
Operating temperature: -40...85°C
Number of inputs: 4
Number of outputs: 1
Technology: ECL
Supply voltage: 4.2...5.7V
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| MC10EL89DG |
|
Виробник: ONSEMI
Category: Other logic integrated circuits
Description: IC: driver; ECL; SOIC8; Ch: 1; 4.2÷5.7V
Type of integrated circuit: driver
Number of channels: 1
Mounting: SMD
Case: SOIC8
Operating temperature: -40...85°C
Technology: ECL
Supply voltage: 4.2...5.7V
Category: Other logic integrated circuits
Description: IC: driver; ECL; SOIC8; Ch: 1; 4.2÷5.7V
Type of integrated circuit: driver
Number of channels: 1
Mounting: SMD
Case: SOIC8
Operating temperature: -40...85°C
Technology: ECL
Supply voltage: 4.2...5.7V
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| MC10EL89DR2G |
|
Виробник: ONSEMI
Category: Other logic integrated circuits
Description: IC: driver; ECL; SOIC8; Ch: 1; 4.2÷5.7V
Type of integrated circuit: driver
Number of channels: 1
Mounting: SMD
Case: SOIC8
Operating temperature: -40...85°C
Technology: ECL
Supply voltage: 4.2...5.7V
Category: Other logic integrated circuits
Description: IC: driver; ECL; SOIC8; Ch: 1; 4.2÷5.7V
Type of integrated circuit: driver
Number of channels: 1
Mounting: SMD
Case: SOIC8
Operating temperature: -40...85°C
Technology: ECL
Supply voltage: 4.2...5.7V
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| MC10ELT21DG |
|
Виробник: ONSEMI
Category: Level translators
Description: IC: digital; non-inverting,logic level voltage translator; Ch: 1
Type of integrated circuit: digital
Kind of integrated circuit: logic level voltage translator; non-inverting
Number of channels: 1
Mounting: SMD
Case: SO8
Operating temperature: -40...85°C
Kind of package: tube
Number of inputs: 2
Number of outputs: 1
Manufacturer series: 10ELT
Category: Level translators
Description: IC: digital; non-inverting,logic level voltage translator; Ch: 1
Type of integrated circuit: digital
Kind of integrated circuit: logic level voltage translator; non-inverting
Number of channels: 1
Mounting: SMD
Case: SO8
Operating temperature: -40...85°C
Kind of package: tube
Number of inputs: 2
Number of outputs: 1
Manufacturer series: 10ELT
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| MC10ELT22DG |
|
Виробник: ONSEMI
Category: Level translators
Description: IC: digital; logic level voltage translator; Ch: 2; SMD; SO8; tube
Type of integrated circuit: digital
Kind of integrated circuit: logic level voltage translator
Number of channels: 2
Mounting: SMD
Case: SO8
Operating temperature: -40...85°C
Kind of package: tube
Number of inputs: 2
Number of outputs: 4
Manufacturer series: 10ELT
Category: Level translators
Description: IC: digital; logic level voltage translator; Ch: 2; SMD; SO8; tube
Type of integrated circuit: digital
Kind of integrated circuit: logic level voltage translator
Number of channels: 2
Mounting: SMD
Case: SO8
Operating temperature: -40...85°C
Kind of package: tube
Number of inputs: 2
Number of outputs: 4
Manufacturer series: 10ELT
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| MC10ELT24DG |
|
Виробник: ONSEMI
Category: Level translators
Description: IC: digital; logic level voltage translator; Ch: 1; SMD; SO8; tube
Type of integrated circuit: digital
Kind of integrated circuit: logic level voltage translator
Number of channels: 1
Mounting: SMD
Case: SO8
Operating temperature: -40...85°C
Kind of package: tube
Number of inputs: 1
Number of outputs: 2
Manufacturer series: 10ELT
Category: Level translators
Description: IC: digital; logic level voltage translator; Ch: 1; SMD; SO8; tube
Type of integrated circuit: digital
Kind of integrated circuit: logic level voltage translator
Number of channels: 1
Mounting: SMD
Case: SO8
Operating temperature: -40...85°C
Kind of package: tube
Number of inputs: 1
Number of outputs: 2
Manufacturer series: 10ELT
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| MC10ELT25DR2G |
|
Виробник: ONSEMI
Category: Level translators
Description: IC: digital; non-inverting,logic level voltage translator; Ch: 1
Type of integrated circuit: digital
Kind of integrated circuit: logic level voltage translator; non-inverting
Number of channels: 1
Mounting: SMD
Case: SO8
Operating temperature: -40...85°C
Kind of package: reel; tape
Number of inputs: 2
Number of outputs: 1
Manufacturer series: 10ELT
Category: Level translators
Description: IC: digital; non-inverting,logic level voltage translator; Ch: 1
Type of integrated circuit: digital
Kind of integrated circuit: logic level voltage translator; non-inverting
Number of channels: 1
Mounting: SMD
Case: SO8
Operating temperature: -40...85°C
Kind of package: reel; tape
Number of inputs: 2
Number of outputs: 1
Manufacturer series: 10ELT
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| MC10EP05DG |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 4; ECL; SMD; SOIC8; -40÷85°C; 29mA; OUT: 2
Type of integrated circuit: digital
Number of channels: 1
Mounting: SMD
Case: SOIC8
Operating temperature: -40...85°C
Number of inputs: 4
Number of outputs: 2
Kind of gate: NAND
Technology: ECL
Supply voltage: 3...5.5V
Quiescent current: 29mA
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 4; ECL; SMD; SOIC8; -40÷85°C; 29mA; OUT: 2
Type of integrated circuit: digital
Number of channels: 1
Mounting: SMD
Case: SOIC8
Operating temperature: -40...85°C
Number of inputs: 4
Number of outputs: 2
Kind of gate: NAND
Technology: ECL
Supply voltage: 3...5.5V
Quiescent current: 29mA
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