| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||||
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| NCV8170AMX150TCG | ONSEMI |
 Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 1.5V; 0.15A; XDFN4; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Output voltage: 1.5V Output current: 0.15A Case: XDFN4 Mounting: SMD Kind of package: reel; tape Number of channels: 1 Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NCV8170BMX150TCG | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 1.5V; 0.15A; XDFN4; SMD Output voltage: 1.5V Kind of package: reel; tape Case: XDFN4 Number of channels: 1 Mounting: SMD Kind of voltage regulator: fixed; LDO; linear Output current: 0.15A Type of integrated circuit: voltage regulator Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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NSS40201LT1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 40V; 2A; 0.54W; SOT23,TO236AB Case: SOT23; TO236AB Mounting: SMD Frequency: 150MHz Kind of package: reel; tape Collector-emitter voltage: 40V Power dissipation: 0.54W Polarisation: bipolar Application: automotive industry Type of transistor: NPN Current gain: 200 Collector current: 2A |
на замовлення 7 шт: термін постачання 14-30 дні (днів) |
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NSS40200LT1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 40V; 2A; 0.71W; SOT23,TO236AB Mounting: SMD Kind of package: reel; tape Collector-emitter voltage: 40V Power dissipation: 0.71W Polarisation: bipolar Type of transistor: PNP Current gain: 250 Case: SOT23; TO236AB Frequency: 100MHz Collector current: 2A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NCP1010ST65T3G | ONSEMI |
Category: Voltage regulators - PWM circuits Description: IC: PMIC; AC/DC switcher,PWM controller; 100mA; 65kHz; Ch: 1; 23Ω Type of integrated circuit: PMIC Kind of integrated circuit: AC/DC switcher; PWM controller Output current: 0.1A Frequency: 65kHz Number of channels: 1 Case: SOT223 Mounting: SMD Operating temperature: -40...125°C Topology: flyback On-state resistance: 23Ω Duty cycle factor: 0...72% Kind of package: reel; tape Application: SMPS Operating voltage: 8.5...10V DC |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | ||||||||||||||||||
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NCP1011ST130T3G | ONSEMI |
Category: Voltage regulators - PWM circuits Description: IC: PMIC; AC/DC switcher,PWM controller; 250mA; 130kHz; Ch: 1; 23Ω Type of integrated circuit: PMIC Kind of integrated circuit: AC/DC switcher; PWM controller Output current: 0.25A Frequency: 130kHz Number of channels: 1 Case: SOT223 Mounting: SMD Operating temperature: -40...125°C Topology: flyback On-state resistance: 23Ω Duty cycle factor: 0...72% Kind of package: reel; tape Application: SMPS Operating voltage: 8.5...10V DC |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | ||||||||||||||||||
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NCP1071STBT3G | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; AC/DC switcher,PWM controller; SOT223; flyback Type of integrated circuit: PMIC Kind of integrated circuit: AC/DC switcher; PWM controller Output current: 0.35A Frequency: 90...110kHz Number of channels: 1 Case: SOT223 Mounting: SMD Operating temperature: -40...125°C Topology: flyback On-state resistance: 32Ω Operating voltage: 6.3...10V DC |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | ||||||||||||||||||
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NCP1075STCT3G | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; AC/DC switcher,PWM controller; SOT223; flyback Type of integrated circuit: PMIC Kind of integrated circuit: AC/DC switcher; PWM controller Output current: 0.45A Frequency: 117...143kHz Mounting: SMD Case: SOT223 Topology: flyback Number of channels: 1 Operating temperature: -40...125°C On-state resistance: 16Ω Operating voltage: 6.3...10V DC |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | ||||||||||||||||||
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74ACT32SCX | ONSEMI |
Category: Gates, inverters Description: IC: digital; OR; Ch: 4; IN: 2; SMD; SO14; 4.5÷5.5VDC; -40÷85°C; ACT Type of integrated circuit: digital Kind of gate: OR Number of channels: quad; 4 Number of inputs: 2 Mounting: SMD Case: SO14 Supply voltage: 4.5...5.5V DC Operating temperature: -40...85°C Kind of package: reel; tape Family: ACT |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||||
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MM74HCT32M | ONSEMI |
Category: Gates, inverters Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; SO14; 4.5÷5.5VDC; -40÷85°C Type of integrated circuit: digital Kind of gate: OR Number of channels: quad; 4 Number of inputs: 2 Mounting: SMD Case: SO14 Family: HCT Kind of package: tube Delay time: 10ns Supply voltage: 4.5...5.5V DC Operating temperature: -40...85°C Technology: CMOS |
на замовлення 246 шт: термін постачання 14-30 дні (днів) |
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MMBZ6V8ALT1G | ONSEMI |
Category: Protection diodes - arrays Description: Diode: TVS array; 6.8V; 2.5A; 24W; double,common anode; ESD; SOT23 Type of diode: TVS array Breakdown voltage: 6.8V Max. forward impulse current: 2.5A Peak pulse power dissipation: 24W Semiconductor structure: common anode; double Version: ESD Mounting: SMD Case: SOT23 Max. off-state voltage: 4.5V Leakage current: 0.5µA Number of channels: 2 Tolerance: ±5% Kind of package: reel; tape |
на замовлення 11782 шт: термін постачання 14-30 дні (днів) |
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NSQA6V8AW5T2G | ONSEMI |
Category: Protection diodes - arrays Description: Diode: TVS array; 6.4÷7.1V; quadruple,common anode; SC88A; Ch: 4 Type of diode: TVS array Breakdown voltage: 6.4...7.1V Semiconductor structure: common anode; quadruple Case: SC88A Mounting: SMD Kind of package: reel; tape Number of channels: 4 Max. off-state voltage: 5V |
на замовлення 2634 шт: термін постачання 14-30 дні (днів) |
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| NZL6V8AXV3T1G | ONSEMI |
Category: Protection diodes - arrays Description: Diode: TVS array; 6.8V; double,common anode; SC89; Ch: 2; reel,tape Type of diode: TVS array Breakdown voltage: 6.8V Semiconductor structure: common anode; double Case: SC89 Mounting: SMD Kind of package: reel; tape Number of channels: 2 Max. off-state voltage: 4.5V Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NZQA6V8AXV5T1G | ONSEMI |
Category: Protection diodes - arrays Description: Diode: TVS array; 6.46÷7.14V; 1.6A; 20W; common anode; ESD; SOT553 Type of diode: TVS array Peak pulse power dissipation: 20W Breakdown voltage: 6.46...7.14V Semiconductor structure: common anode Case: SOT553 Mounting: SMD Kind of package: reel; tape Number of channels: 4 Max. forward impulse current: 1.6A Max. off-state voltage: 4.3V Version: ESD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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SZMMBZ6V8ALT1G | ONSEMI |
Category: Protection diodes - arrays Description: Diode: TVS array; 6.8V; 2.5A; 25W; double,common anode; SOT23; Ch: 2 Type of diode: TVS array Peak pulse power dissipation: 25W Breakdown voltage: 6.8V Semiconductor structure: common anode; double Case: SOT23 Mounting: SMD Kind of package: reel; tape Number of channels: 2 Max. forward impulse current: 2.5A Tolerance: ±5% Max. off-state voltage: 4.5V Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| SZNSQA6V8AW5T2G | ONSEMI |
Category: Protection diodes - arrays Description: Diode: TVS array; 6.4÷7.1V; quadruple,common anode; SC88A; Ch: 4 Type of diode: TVS array Breakdown voltage: 6.4...7.1V Semiconductor structure: common anode; quadruple Case: SC88A Mounting: SMD Kind of package: reel; tape Number of channels: 4 Max. off-state voltage: 5V Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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FDC6318P | ONSEMI |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -12V; -2.5A; 0.96W; SuperSOT-6 Type of transistor: P-MOSFET x2 Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: -12V Drain current: -2.5A Power dissipation: 0.96W Case: SuperSOT-6 Gate-source voltage: ±8V On-state resistance: 0.2Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 8nC |
на замовлення 2287 шт: термін постачання 14-30 дні (днів) |
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NTD20N03L27T4G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 16A; 74W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 16A Power dissipation: 74W Case: DPAK Gate-source voltage: ±20V On-state resistance: 27mΩ Mounting: SMD Kind of channel: enhancement Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||||
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1N5344BRLG | ONSEMI |
 Category: THT Zener diodesDescription: Diode: Zener; 5W; 8.2V; CASE017AA; single diode; reel,tape; 1N53xxB Type of diode: Zener Power dissipation: 5W Zener voltage: 8.2V Case: CASE017AA Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: 1N53xxB |
на замовлення 18 шт: термін постачання 14-30 дні (днів) |
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1N5344BG | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 5W; 8.2V; CASE017AA; single diode; bulk; 1N53xxB Type of diode: Zener Power dissipation: 5W Zener voltage: 8.2V Case: CASE017AA Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Kind of package: bulk Manufacturer series: 1N53xxB |
на замовлення 486 шт: термін постачання 14-30 дні (днів) |
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| 1N5344BRLG | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 5W; 8.2V; reel,tape; CASE017AA; single diode; 1N53xxB Type of diode: Zener Power dissipation: 5W Zener voltage: 8.2V Kind of package: reel; tape Case: CASE017AA Mounting: THT Semiconductor structure: single diode Manufacturer series: 1N53xxB Tolerance: ±5% |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| 1N5347BRLG | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 5W; 10V; CASE017AA; single diode; reel,tape; 1N53xxB Type of diode: Zener Power dissipation: 5W Zener voltage: 10V Case: CASE017AA Mounting: THT Kind of package: reel; tape Semiconductor structure: single diode Tolerance: ±5% Manufacturer series: 1N53xxB |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| 1N5341BRLG | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 5W; 6.2V; CASE017AA; single diode; reel,tape; 1N53xxB Type of diode: Zener Power dissipation: 5W Zener voltage: 6.2V Case: CASE017AA Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: 1N53xxB |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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MMBT2369ALT1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 15V; 0.2A; 0.225/0.3W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 15V Collector current: 0.2A Power dissipation: 0.225/0.3W Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Current gain: 40...120 |
на замовлення 8950 шт: термін постачання 14-30 дні (днів) |
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MMBT2369LT1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 15V; 0.2A; 0.225/0.3W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 15V Collector current: 0.2A Power dissipation: 0.225/0.3W Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Current gain: 20...120 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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SMMBT2369ALT1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 15V; 0.2A; 0.225W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 15V Collector current: 0.2A Power dissipation: 0.225W Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Frequency: 300MHz Application: automotive industry Current gain: 40...120 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MC74HC1G14DFT1G | ONSEMI |
Category: Gates, inverters Description: IC: digital; NOT; Ch: 1; IN: 1; CMOS; SMD; SC70-5; 2÷6VDC; -55÷125°C Type of integrated circuit: digital Kind of gate: NOT Number of channels: single; 1 Technology: CMOS Mounting: SMD Case: SC70-5 Kind of package: reel; tape Kind of input: with Schmitt trigger Family: HC Supply voltage: 2...6V DC Operating temperature: -55...125°C Number of inputs: 1 |
на замовлення 128 шт: термін постачання 14-30 дні (днів) |
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MC74HC1G14DTT1G | ONSEMI |
Category: Gates, inverters Description: IC: digital; NOT; Ch: 1; IN: 1; CMOS; SMD; TSOP5; 2÷6VDC; -55÷125°C Type of integrated circuit: digital Kind of gate: NOT Number of channels: single; 1 Technology: CMOS Mounting: SMD Case: TSOP5 Kind of package: reel; tape Kind of input: with Schmitt trigger Family: HC Supply voltage: 2...6V DC Operating temperature: -55...125°C Number of inputs: 1 |
на замовлення 5 шт: термін постачання 14-30 дні (днів) |
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| MC74HC1G14DBVT1G-Q | ONSEMI |
Category: Gates, inverters Description: IC: digital; inverter,Schmitt trigger; Ch: 1; IN: 1; CMOS; SMD; SC74A Type of integrated circuit: digital Number of channels: 1 Technology: CMOS Mounting: SMD Case: SC74A Family: HC Supply voltage: 2...6V Kind of output: push-pull Operating temperature: -55...125°C Quiescent current: 1µA Number of inputs: 1 Kind of integrated circuit: inverter; Schmitt trigger |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| MC74HC1G14DFT2G-Q | ONSEMI |
Category: Gates, inverters Description: IC: digital; inverter,Schmitt trigger; Ch: 1; IN: 1; CMOS; SMD; 1uA Type of integrated circuit: digital Number of channels: 1 Technology: CMOS Mounting: SMD Case: SC70-5 Family: HC Supply voltage: 2...6V Kind of output: push-pull Operating temperature: -55...125°C Quiescent current: 1µA Number of inputs: 1 Kind of integrated circuit: inverter; Schmitt trigger |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| MC74HC1G14DBVT1G | ONSEMI |
Category: Gates, inverters Description: IC: digital; inverter,Schmitt trigger; Ch: 1; IN: 1; CMOS; SMD; SC74A Type of integrated circuit: digital Number of channels: 1 Technology: CMOS Mounting: SMD Case: SC74A Family: HC Supply voltage: 2...6V Kind of output: push-pull Operating temperature: -55...125°C Quiescent current: 1µA Number of inputs: 1 Kind of integrated circuit: inverter; Schmitt trigger |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| MC74HC1G14DFT1G-Q | ONSEMI |
Category: Gates, inverters Description: IC: digital; inverter,Schmitt trigger; Ch: 1; IN: 1; CMOS; SMD; 1uA Type of integrated circuit: digital Number of channels: 1 Technology: CMOS Mounting: SMD Case: SC70-5 Family: HC Supply voltage: 2...6V Kind of output: push-pull Operating temperature: -55...125°C Quiescent current: 1µA Number of inputs: 1 Kind of integrated circuit: inverter; Schmitt trigger |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| MC74HC1G14DFT2G | ONSEMI |
Category: Gates, inverters Description: IC: digital; NOT; Ch: 1; IN: 1; CMOS; SMD; SC70-5; 2÷6VDC; -55÷125°C Type of integrated circuit: digital Kind of gate: NOT Number of channels: single; 1 Technology: CMOS Mounting: SMD Case: SC70-5 Kind of package: reel; tape Kind of input: with Schmitt trigger Family: HC Supply voltage: 2...6V DC Operating temperature: -55...125°C Number of inputs: 1 |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||||
| LM2575D2T-ADJR4G | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 1.23÷37VDC; 1A; SMD Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Input voltage: 4.75...40V DC Output voltage: 1.23...37V DC Output current: 1A Case: D2PAK-5 Mounting: SMD Frequency: 42...63kHz Topology: buck Operating temperature: -40...125°C Number of channels: 1 Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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MC14503BDG | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; 3-state,buffer,hex; Ch: 6; IN: 1; CMOS; SMD; SOIC16; tube Type of integrated circuit: digital Kind of integrated circuit: 3-state; buffer; hex Number of channels: 6 Technology: CMOS Mounting: SMD Case: SOIC16 Operating temperature: -55...125°C Kind of output: 3-state Supply voltage: 3...18V DC Number of inputs: 1 Kind of package: tube |
на замовлення 9 шт: термін постачання 14-30 дні (днів) |
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FJV1845FMTF | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 120V; 0.05A; 0.3W; SOT23,TO236AB Collector current: 50mA Mounting: SMD Collector-emitter voltage: 120V Power dissipation: 0.3W Polarisation: bipolar Type of transistor: NPN Current gain: 300...600 Kind of package: reel; tape Case: SOT23; TO236AB Frequency: 50MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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HUF75639P3 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 56A; 200W; TO220AB Mounting: THT Power dissipation: 200W Gate charge: 130nC Polarisation: unipolar Technology: UltraFET® Drain current: 56A Kind of channel: enhancement Drain-source voltage: 100V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: tube Case: TO220AB On-state resistance: 25mΩ |
на замовлення 78 шт: термін постачання 14-30 дні (днів) |
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| NC7WZ02L8X-L22185 | ONSEMI |
Category: Gates, inverters Description: IC: digital Type of integrated circuit: digital |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | |||||||||||||||||||
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FDWS9509L-F085 | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -65A; 107W; DFN8 Case: DFN8 Kind of channel: enhancement Mounting: SMD Type of transistor: P-MOSFET Technology: PowerTrench® Kind of package: reel; tape Polarisation: unipolar Drain current: -65A Drain-source voltage: -40V Gate charge: 67nC On-state resistance: 13mΩ Gate-source voltage: ±16V Power dissipation: 107W Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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RB751S40T1G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SOD523; SMD; 40V; 30mA; reel,tape Type of diode: Schottky switching Case: SOD523 Mounting: SMD Max. off-state voltage: 40V Load current: 30mA Semiconductor structure: single diode Max. forward voltage: 0.37V Max. forward impulse current: 0.5A Kind of package: reel; tape |
на замовлення 1 шт: термін постачання 14-30 дні (днів) |
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M74VHC1GU04DTT1G | ONSEMI |
Category: Gates, inverters Description: IC: digital; inverter; NOT; Ch: 1; IN: 1; CMOS; SMD; TSOP5; VHC; VHC Case: TSOP5 Number of inputs: 1 Kind of package: reel; tape Family: VHC Kind of integrated circuit: inverter Number of channels: 1 Mounting: SMD Supply voltage: 2...5.5V DC Manufacturer series: VHC Kind of gate: NOT Type of integrated circuit: digital Operating temperature: -55...125°C Technology: CMOS |
на замовлення 2654 шт: термін постачання 14-30 дні (днів) |
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MC74LCXU04DG | ONSEMI |
Category: Gates, inverters Description: IC: digital; hex,inverter; NOT; Ch: 6; IN: 1; CMOS; SMD; SOIC14; tube Case: SOIC14 Number of inputs: 1 Kind of package: tube Family: LCXU Kind of integrated circuit: hex; inverter Number of channels: 6 Mounting: SMD Supply voltage: 1.5...3.6V DC Kind of gate: NOT Type of integrated circuit: digital Operating temperature: -40...85°C Integrated circuit features: tolerates a voltage of 5V on the inputs Technology: CMOS |
на замовлення 258 шт: термін постачання 14-30 дні (днів) |
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MJD41CRLG | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 100V; 6A; 20W; DPAK Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 6A Power dissipation: 20W Case: DPAK Current gain: 15...75 Mounting: SMD Kind of package: reel; tape Frequency: 3MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MJD41CT4G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 100V; 6A; 20W; DPAK Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 6A Power dissipation: 20W Case: DPAK Current gain: 15...75 Mounting: SMD Kind of package: reel; tape Frequency: 3MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NJVMJD41CT4G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 100V; 6A; 20W; DPAK; automotive industry Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 6A Power dissipation: 20W Case: DPAK Current gain: 15...75 Mounting: SMD Kind of package: reel; tape Frequency: 3MHz Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MC100ELT25DG | ONSEMI |
Category: Level translators Description: IC: digital; logic level voltage translator; Ch: 1; 4.5÷5.5VDC Mounting: SMD Case: SO8 Kind of package: tube Manufacturer series: 100ELT Number of channels: 1 Operating temperature: -40...85°C Supply voltage: 4.5...5.5V DC Number of inputs: 2 Number of outputs: 1 Kind of integrated circuit: logic level voltage translator Type of integrated circuit: digital |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
 |
MC100ELT23DTG | ONSEMI |
Category: Level translators Description: IC: digital; logic level voltage translator; Ch: 2; 4.75÷5.25VDC Mounting: SMD Case: TSSOP8 Kind of package: tube Manufacturer series: 100ELT Number of channels: 2 Operating temperature: -40...85°C Supply voltage: 4.75...5.25V DC Number of inputs: 4 Number of outputs: 2 Kind of integrated circuit: logic level voltage translator Type of integrated circuit: digital |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
 |
BAS16HT3G | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 200mA; 6ns; SOD323; Ufmax: 1V Type of diode: switching Mounting: SMD Max. off-state voltage: 0.1kV Load current: 0.2A Reverse recovery time: 6ns Case: SOD323 Max. forward voltage: 1V Max. forward impulse current: 0.2A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
 |
SBAS16HT3G | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOD323; Ufmax: 1.25V; Ir: 30uA Type of diode: switching Mounting: SMD Max. off-state voltage: 0.1kV Load current: 0.2A Reverse recovery time: 6ns Semiconductor structure: single diode Case: SOD323 Max. forward voltage: 1.25V Power dissipation: 0.2W Kind of package: reel; tape Max. forward impulse current: 36A Application: automotive industry Leakage current: 30µA Capacitance: 2pF |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
 |
MBR745G | ONSEMI |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 45V; 7.5A; TO220AC; Ufmax: 0.57V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 45V Load current: 7.5A Case: TO220AC Semiconductor structure: single diode Max. forward impulse current: 150A Max. forward voltage: 0.57V Heatsink thickness: 1.14...1.39mm Max. load current: 7.5A Kind of package: tube |
на замовлення 241 шт: термін постачання 14-30 дні (днів) |
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| NSR201MXT5G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky switching; X2DFN2; SMD; 2V; 50mA; reel,tape Type of diode: Schottky switching Case: X2DFN2 Mounting: SMD Max. off-state voltage: 2V Load current: 50mA Semiconductor structure: single diode Max. forward voltage: 0.32V Kind of package: reel; tape Capacitance: 0.15pF |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| FCH190N65F-F155 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 20.6A; Idm: 61.8A; 208W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 20.6A Pulsed drain current: 61.8A Power dissipation: 208W Case: TO247-3 Gate-source voltage: ±20V On-state resistance: 0.19Ω Mounting: THT Gate charge: 60nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
 |
NVB190N65S3F | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 60A; 162W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 20A Power dissipation: 162W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: SMD Gate charge: 34nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 60A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
 |
FCP190N65F | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 20.6A; Idm: 61.8A; 208W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 20.6A Pulsed drain current: 61.8A Power dissipation: 208W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 0.19Ω Mounting: THT Gate charge: 60nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
|
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FCP190N65S3 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 17A; Idm: 42.5A; 144W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 17A Pulsed drain current: 42.5A Power dissipation: 144W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: THT Gate charge: 33nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
|
|
FCP190N65S3R0 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 17A; Idm: 42.5A; 144W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 17A Pulsed drain current: 42.5A Power dissipation: 144W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: THT Gate charge: 33nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
|
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NTB190N65S3HF | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 50A; 162W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 20A Power dissipation: 162W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: SMD Gate charge: 34nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 50A |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||||||||||
 |
NTP190N65S3HF | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 50A; 162W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 20A Power dissipation: 162W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: THT Gate charge: 34nC Kind of package: tube Kind of channel: enhancement Pulsed drain current: 50A |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||||||||||
| NTHL190N65S3HF | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 12.7A; Idm: 50A; 162W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 12.7A Power dissipation: 162W Case: TO247 Gate-source voltage: ±30V On-state resistance: 0.165Ω Mounting: THT Gate charge: 34nC Kind of package: tube Kind of channel: enhancement Pulsed drain current: 50A |
товару немає в наявності |
Мінімальне замовлення: 450 шт В кошику од. на суму грн. | |||||||||||||||||||
| NTMT190N65S3H | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 16A; Idm: 45A; 129W; TDFN4 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 16A Power dissipation: 129W Case: TDFN4 Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: SMD Gate charge: 31nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 45A |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. |
| NCV8170AMX150TCG |
|
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.5V; 0.15A; XDFN4; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 1.5V
Output current: 0.15A
Case: XDFN4
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.5V; 0.15A; XDFN4; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 1.5V
Output current: 0.15A
Case: XDFN4
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| NCV8170BMX150TCG |
|
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.5V; 0.15A; XDFN4; SMD
Output voltage: 1.5V
Kind of package: reel; tape
Case: XDFN4
Number of channels: 1
Mounting: SMD
Kind of voltage regulator: fixed; LDO; linear
Output current: 0.15A
Type of integrated circuit: voltage regulator
Application: automotive industry
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.5V; 0.15A; XDFN4; SMD
Output voltage: 1.5V
Kind of package: reel; tape
Case: XDFN4
Number of channels: 1
Mounting: SMD
Kind of voltage regulator: fixed; LDO; linear
Output current: 0.15A
Type of integrated circuit: voltage regulator
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| NSS40201LT1G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 2A; 0.54W; SOT23,TO236AB
Case: SOT23; TO236AB
Mounting: SMD
Frequency: 150MHz
Kind of package: reel; tape
Collector-emitter voltage: 40V
Power dissipation: 0.54W
Polarisation: bipolar
Application: automotive industry
Type of transistor: NPN
Current gain: 200
Collector current: 2A
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 2A; 0.54W; SOT23,TO236AB
Case: SOT23; TO236AB
Mounting: SMD
Frequency: 150MHz
Kind of package: reel; tape
Collector-emitter voltage: 40V
Power dissipation: 0.54W
Polarisation: bipolar
Application: automotive industry
Type of transistor: NPN
Current gain: 200
Collector current: 2A
на замовлення 7 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 64.92 грн |
| NSS40200LT1G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 2A; 0.71W; SOT23,TO236AB
Mounting: SMD
Kind of package: reel; tape
Collector-emitter voltage: 40V
Power dissipation: 0.71W
Polarisation: bipolar
Type of transistor: PNP
Current gain: 250
Case: SOT23; TO236AB
Frequency: 100MHz
Collector current: 2A
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 2A; 0.71W; SOT23,TO236AB
Mounting: SMD
Kind of package: reel; tape
Collector-emitter voltage: 40V
Power dissipation: 0.71W
Polarisation: bipolar
Type of transistor: PNP
Current gain: 250
Case: SOT23; TO236AB
Frequency: 100MHz
Collector current: 2A
товару немає в наявності
В кошику
од. на суму грн.
| NCP1010ST65T3G |
|
Виробник: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; 100mA; 65kHz; Ch: 1; 23Ω
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.1A
Frequency: 65kHz
Number of channels: 1
Case: SOT223
Mounting: SMD
Operating temperature: -40...125°C
Topology: flyback
On-state resistance: 23Ω
Duty cycle factor: 0...72%
Kind of package: reel; tape
Application: SMPS
Operating voltage: 8.5...10V DC
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; 100mA; 65kHz; Ch: 1; 23Ω
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.1A
Frequency: 65kHz
Number of channels: 1
Case: SOT223
Mounting: SMD
Operating temperature: -40...125°C
Topology: flyback
On-state resistance: 23Ω
Duty cycle factor: 0...72%
Kind of package: reel; tape
Application: SMPS
Operating voltage: 8.5...10V DC
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику
од. на суму грн.
| NCP1011ST130T3G |
|
Виробник: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; 250mA; 130kHz; Ch: 1; 23Ω
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.25A
Frequency: 130kHz
Number of channels: 1
Case: SOT223
Mounting: SMD
Operating temperature: -40...125°C
Topology: flyback
On-state resistance: 23Ω
Duty cycle factor: 0...72%
Kind of package: reel; tape
Application: SMPS
Operating voltage: 8.5...10V DC
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; 250mA; 130kHz; Ch: 1; 23Ω
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.25A
Frequency: 130kHz
Number of channels: 1
Case: SOT223
Mounting: SMD
Operating temperature: -40...125°C
Topology: flyback
On-state resistance: 23Ω
Duty cycle factor: 0...72%
Kind of package: reel; tape
Application: SMPS
Operating voltage: 8.5...10V DC
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику
од. на суму грн.
| NCP1071STBT3G |
|
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SOT223; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.35A
Frequency: 90...110kHz
Number of channels: 1
Case: SOT223
Mounting: SMD
Operating temperature: -40...125°C
Topology: flyback
On-state resistance: 32Ω
Operating voltage: 6.3...10V DC
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SOT223; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.35A
Frequency: 90...110kHz
Number of channels: 1
Case: SOT223
Mounting: SMD
Operating temperature: -40...125°C
Topology: flyback
On-state resistance: 32Ω
Operating voltage: 6.3...10V DC
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику
од. на суму грн.
| NCP1075STCT3G |
|
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SOT223; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.45A
Frequency: 117...143kHz
Mounting: SMD
Case: SOT223
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
On-state resistance: 16Ω
Operating voltage: 6.3...10V DC
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SOT223; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.45A
Frequency: 117...143kHz
Mounting: SMD
Case: SOT223
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
On-state resistance: 16Ω
Operating voltage: 6.3...10V DC
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику
од. на суму грн.
| 74ACT32SCX |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; SMD; SO14; 4.5÷5.5VDC; -40÷85°C; ACT
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: SO14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: ACT
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; SMD; SO14; 4.5÷5.5VDC; -40÷85°C; ACT
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: SO14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: ACT
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| MM74HCT32M |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; SO14; 4.5÷5.5VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: SO14
Family: HCT
Kind of package: tube
Delay time: 10ns
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Technology: CMOS
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; SO14; 4.5÷5.5VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: SO14
Family: HCT
Kind of package: tube
Delay time: 10ns
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Technology: CMOS
на замовлення 246 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 15+ | 31.09 грн |
| 17+ | 25.39 грн |
| MMBZ6V8ALT1G |
|
Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.8V; 2.5A; 24W; double,common anode; ESD; SOT23
Type of diode: TVS array
Breakdown voltage: 6.8V
Max. forward impulse current: 2.5A
Peak pulse power dissipation: 24W
Semiconductor structure: common anode; double
Version: ESD
Mounting: SMD
Case: SOT23
Max. off-state voltage: 4.5V
Leakage current: 0.5µA
Number of channels: 2
Tolerance: ±5%
Kind of package: reel; tape
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.8V; 2.5A; 24W; double,common anode; ESD; SOT23
Type of diode: TVS array
Breakdown voltage: 6.8V
Max. forward impulse current: 2.5A
Peak pulse power dissipation: 24W
Semiconductor structure: common anode; double
Version: ESD
Mounting: SMD
Case: SOT23
Max. off-state voltage: 4.5V
Leakage current: 0.5µA
Number of channels: 2
Tolerance: ±5%
Kind of package: reel; tape
на замовлення 11782 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 39+ | 11.89 грн |
| 53+ | 8.15 грн |
| 61+ | 7.05 грн |
| 89+ | 4.82 грн |
| 108+ | 3.95 грн |
| 250+ | 2.92 грн |
| 500+ | 2.40 грн |
| 1000+ | 2.18 грн |
| 3000+ | 1.80 грн |
| NSQA6V8AW5T2G |
|
Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.4÷7.1V; quadruple,common anode; SC88A; Ch: 4
Type of diode: TVS array
Breakdown voltage: 6.4...7.1V
Semiconductor structure: common anode; quadruple
Case: SC88A
Mounting: SMD
Kind of package: reel; tape
Number of channels: 4
Max. off-state voltage: 5V
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.4÷7.1V; quadruple,common anode; SC88A; Ch: 4
Type of diode: TVS array
Breakdown voltage: 6.4...7.1V
Semiconductor structure: common anode; quadruple
Case: SC88A
Mounting: SMD
Kind of package: reel; tape
Number of channels: 4
Max. off-state voltage: 5V
на замовлення 2634 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 30.17 грн |
| 17+ | 25.98 грн |
| 100+ | 18.51 грн |
| 500+ | 13.75 грн |
| NZL6V8AXV3T1G |
|
Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.8V; double,common anode; SC89; Ch: 2; reel,tape
Type of diode: TVS array
Breakdown voltage: 6.8V
Semiconductor structure: common anode; double
Case: SC89
Mounting: SMD
Kind of package: reel; tape
Number of channels: 2
Max. off-state voltage: 4.5V
Application: automotive industry
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.8V; double,common anode; SC89; Ch: 2; reel,tape
Type of diode: TVS array
Breakdown voltage: 6.8V
Semiconductor structure: common anode; double
Case: SC89
Mounting: SMD
Kind of package: reel; tape
Number of channels: 2
Max. off-state voltage: 4.5V
Application: automotive industry
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В кошику
од. на суму грн.
| NZQA6V8AXV5T1G |
|
Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.46÷7.14V; 1.6A; 20W; common anode; ESD; SOT553
Type of diode: TVS array
Peak pulse power dissipation: 20W
Breakdown voltage: 6.46...7.14V
Semiconductor structure: common anode
Case: SOT553
Mounting: SMD
Kind of package: reel; tape
Number of channels: 4
Max. forward impulse current: 1.6A
Max. off-state voltage: 4.3V
Version: ESD
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.46÷7.14V; 1.6A; 20W; common anode; ESD; SOT553
Type of diode: TVS array
Peak pulse power dissipation: 20W
Breakdown voltage: 6.46...7.14V
Semiconductor structure: common anode
Case: SOT553
Mounting: SMD
Kind of package: reel; tape
Number of channels: 4
Max. forward impulse current: 1.6A
Max. off-state voltage: 4.3V
Version: ESD
товару немає в наявності
В кошику
од. на суму грн.
| SZMMBZ6V8ALT1G |
|
Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.8V; 2.5A; 25W; double,common anode; SOT23; Ch: 2
Type of diode: TVS array
Peak pulse power dissipation: 25W
Breakdown voltage: 6.8V
Semiconductor structure: common anode; double
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Number of channels: 2
Max. forward impulse current: 2.5A
Tolerance: ±5%
Max. off-state voltage: 4.5V
Application: automotive industry
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.8V; 2.5A; 25W; double,common anode; SOT23; Ch: 2
Type of diode: TVS array
Peak pulse power dissipation: 25W
Breakdown voltage: 6.8V
Semiconductor structure: common anode; double
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Number of channels: 2
Max. forward impulse current: 2.5A
Tolerance: ±5%
Max. off-state voltage: 4.5V
Application: automotive industry
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| SZNSQA6V8AW5T2G |
|
Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.4÷7.1V; quadruple,common anode; SC88A; Ch: 4
Type of diode: TVS array
Breakdown voltage: 6.4...7.1V
Semiconductor structure: common anode; quadruple
Case: SC88A
Mounting: SMD
Kind of package: reel; tape
Number of channels: 4
Max. off-state voltage: 5V
Application: automotive industry
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.4÷7.1V; quadruple,common anode; SC88A; Ch: 4
Type of diode: TVS array
Breakdown voltage: 6.4...7.1V
Semiconductor structure: common anode; quadruple
Case: SC88A
Mounting: SMD
Kind of package: reel; tape
Number of channels: 4
Max. off-state voltage: 5V
Application: automotive industry
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| FDC6318P |
|
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -12V; -2.5A; 0.96W; SuperSOT-6
Type of transistor: P-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -2.5A
Power dissipation: 0.96W
Case: SuperSOT-6
Gate-source voltage: ±8V
On-state resistance: 0.2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 8nC
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -12V; -2.5A; 0.96W; SuperSOT-6
Type of transistor: P-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -2.5A
Power dissipation: 0.96W
Case: SuperSOT-6
Gate-source voltage: ±8V
On-state resistance: 0.2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 8nC
на замовлення 2287 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 64.92 грн |
| 10+ | 45.51 грн |
| 25+ | 39.39 грн |
| 100+ | 31.41 грн |
| 250+ | 29.63 грн |
| NTD20N03L27T4G |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 16A; 74W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 16A
Power dissipation: 74W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 27mΩ
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 16A; 74W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 16A
Power dissipation: 74W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 27mΩ
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
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Мінімальне замовлення: 2500 шт
В кошику
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| 1N5344BRLG |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 8.2V; CASE017AA; single diode; reel,tape; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 8.2V
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: 1N53xxB
Category: THT Zener diodes
Description: Diode: Zener; 5W; 8.2V; CASE017AA; single diode; reel,tape; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 8.2V
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: 1N53xxB
на замовлення 18 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 32.92 грн |
| 17+ | 25.13 грн |
| 1N5344BG |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 8.2V; CASE017AA; single diode; bulk; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 8.2V
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: bulk
Manufacturer series: 1N53xxB
Category: THT Zener diodes
Description: Diode: Zener; 5W; 8.2V; CASE017AA; single diode; bulk; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 8.2V
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: bulk
Manufacturer series: 1N53xxB
на замовлення 486 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 21+ | 21.94 грн |
| 23+ | 19.02 грн |
| 24+ | 18.42 грн |
| 50+ | 17.32 грн |
| 69+ | 14.01 грн |
| 190+ | 13.24 грн |
| 1N5344BRLG |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 8.2V; reel,tape; CASE017AA; single diode; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 8.2V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
Tolerance: ±5%
Category: THT Zener diodes
Description: Diode: Zener; 5W; 8.2V; reel,tape; CASE017AA; single diode; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 8.2V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
Tolerance: ±5%
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| 1N5347BRLG |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 10V; CASE017AA; single diode; reel,tape; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 10V
Case: CASE017AA
Mounting: THT
Kind of package: reel; tape
Semiconductor structure: single diode
Tolerance: ±5%
Manufacturer series: 1N53xxB
Category: THT Zener diodes
Description: Diode: Zener; 5W; 10V; CASE017AA; single diode; reel,tape; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 10V
Case: CASE017AA
Mounting: THT
Kind of package: reel; tape
Semiconductor structure: single diode
Tolerance: ±5%
Manufacturer series: 1N53xxB
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| 1N5341BRLG |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 6.2V; CASE017AA; single diode; reel,tape; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 6.2V
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: 1N53xxB
Category: THT Zener diodes
Description: Diode: Zener; 5W; 6.2V; CASE017AA; single diode; reel,tape; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 6.2V
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: 1N53xxB
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| MMBT2369ALT1G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 15V; 0.2A; 0.225/0.3W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 15V
Collector current: 0.2A
Power dissipation: 0.225/0.3W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Current gain: 40...120
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 15V; 0.2A; 0.225/0.3W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 15V
Collector current: 0.2A
Power dissipation: 0.225/0.3W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Current gain: 40...120
на замовлення 8950 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 36+ | 12.80 грн |
| 46+ | 9.34 грн |
| 53+ | 8.07 грн |
| 79+ | 5.42 грн |
| 100+ | 4.58 грн |
| 500+ | 3.18 грн |
| 1000+ | 2.78 грн |
| 1500+ | 2.57 грн |
| 3000+ | 2.28 грн |
| MMBT2369LT1G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 15V; 0.2A; 0.225/0.3W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 15V
Collector current: 0.2A
Power dissipation: 0.225/0.3W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Current gain: 20...120
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 15V; 0.2A; 0.225/0.3W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 15V
Collector current: 0.2A
Power dissipation: 0.225/0.3W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Current gain: 20...120
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| SMMBT2369ALT1G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 15V; 0.2A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 15V
Collector current: 0.2A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Application: automotive industry
Current gain: 40...120
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 15V; 0.2A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 15V
Collector current: 0.2A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Application: automotive industry
Current gain: 40...120
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| MC74HC1G14DFT1G |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 1; IN: 1; CMOS; SMD; SC70-5; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: single; 1
Technology: CMOS
Mounting: SMD
Case: SC70-5
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: HC
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Number of inputs: 1
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 1; IN: 1; CMOS; SMD; SC70-5; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: single; 1
Technology: CMOS
Mounting: SMD
Case: SC70-5
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: HC
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Number of inputs: 1
на замовлення 128 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 72+ | 6.40 грн |
| 105+ | 4.08 грн |
| 124+ | 3.43 грн |
| 125+ | 3.40 грн |
| MC74HC1G14DTT1G |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 1; IN: 1; CMOS; SMD; TSOP5; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: single; 1
Technology: CMOS
Mounting: SMD
Case: TSOP5
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: HC
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Number of inputs: 1
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 1; IN: 1; CMOS; SMD; TSOP5; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: single; 1
Technology: CMOS
Mounting: SMD
Case: TSOP5
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: HC
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Number of inputs: 1
на замовлення 5 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 91.43 грн |
| MC74HC1G14DBVT1G-Q |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; inverter,Schmitt trigger; Ch: 1; IN: 1; CMOS; SMD; SC74A
Type of integrated circuit: digital
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SC74A
Family: HC
Supply voltage: 2...6V
Kind of output: push-pull
Operating temperature: -55...125°C
Quiescent current: 1µA
Number of inputs: 1
Kind of integrated circuit: inverter; Schmitt trigger
Category: Gates, inverters
Description: IC: digital; inverter,Schmitt trigger; Ch: 1; IN: 1; CMOS; SMD; SC74A
Type of integrated circuit: digital
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SC74A
Family: HC
Supply voltage: 2...6V
Kind of output: push-pull
Operating temperature: -55...125°C
Quiescent current: 1µA
Number of inputs: 1
Kind of integrated circuit: inverter; Schmitt trigger
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В кошику
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| MC74HC1G14DFT2G-Q |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; inverter,Schmitt trigger; Ch: 1; IN: 1; CMOS; SMD; 1uA
Type of integrated circuit: digital
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SC70-5
Family: HC
Supply voltage: 2...6V
Kind of output: push-pull
Operating temperature: -55...125°C
Quiescent current: 1µA
Number of inputs: 1
Kind of integrated circuit: inverter; Schmitt trigger
Category: Gates, inverters
Description: IC: digital; inverter,Schmitt trigger; Ch: 1; IN: 1; CMOS; SMD; 1uA
Type of integrated circuit: digital
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SC70-5
Family: HC
Supply voltage: 2...6V
Kind of output: push-pull
Operating temperature: -55...125°C
Quiescent current: 1µA
Number of inputs: 1
Kind of integrated circuit: inverter; Schmitt trigger
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| MC74HC1G14DBVT1G |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; inverter,Schmitt trigger; Ch: 1; IN: 1; CMOS; SMD; SC74A
Type of integrated circuit: digital
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SC74A
Family: HC
Supply voltage: 2...6V
Kind of output: push-pull
Operating temperature: -55...125°C
Quiescent current: 1µA
Number of inputs: 1
Kind of integrated circuit: inverter; Schmitt trigger
Category: Gates, inverters
Description: IC: digital; inverter,Schmitt trigger; Ch: 1; IN: 1; CMOS; SMD; SC74A
Type of integrated circuit: digital
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SC74A
Family: HC
Supply voltage: 2...6V
Kind of output: push-pull
Operating temperature: -55...125°C
Quiescent current: 1µA
Number of inputs: 1
Kind of integrated circuit: inverter; Schmitt trigger
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В кошику
од. на суму грн.
| MC74HC1G14DFT1G-Q |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; inverter,Schmitt trigger; Ch: 1; IN: 1; CMOS; SMD; 1uA
Type of integrated circuit: digital
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SC70-5
Family: HC
Supply voltage: 2...6V
Kind of output: push-pull
Operating temperature: -55...125°C
Quiescent current: 1µA
Number of inputs: 1
Kind of integrated circuit: inverter; Schmitt trigger
Category: Gates, inverters
Description: IC: digital; inverter,Schmitt trigger; Ch: 1; IN: 1; CMOS; SMD; 1uA
Type of integrated circuit: digital
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SC70-5
Family: HC
Supply voltage: 2...6V
Kind of output: push-pull
Operating temperature: -55...125°C
Quiescent current: 1µA
Number of inputs: 1
Kind of integrated circuit: inverter; Schmitt trigger
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од. на суму грн.
| MC74HC1G14DFT2G |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 1; IN: 1; CMOS; SMD; SC70-5; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: single; 1
Technology: CMOS
Mounting: SMD
Case: SC70-5
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: HC
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Number of inputs: 1
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 1; IN: 1; CMOS; SMD; SC70-5; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: single; 1
Technology: CMOS
Mounting: SMD
Case: SC70-5
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: HC
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Number of inputs: 1
товару немає в наявності
Мінімальне замовлення: 3000 шт
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од. на суму грн.
| LM2575D2T-ADJR4G |
|
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 1.23÷37VDC; 1A; SMD
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.75...40V DC
Output voltage: 1.23...37V DC
Output current: 1A
Case: D2PAK-5
Mounting: SMD
Frequency: 42...63kHz
Topology: buck
Operating temperature: -40...125°C
Number of channels: 1
Kind of package: reel; tape
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 1.23÷37VDC; 1A; SMD
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.75...40V DC
Output voltage: 1.23...37V DC
Output current: 1A
Case: D2PAK-5
Mounting: SMD
Frequency: 42...63kHz
Topology: buck
Operating temperature: -40...125°C
Number of channels: 1
Kind of package: reel; tape
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| MC14503BDG |
|
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer,hex; Ch: 6; IN: 1; CMOS; SMD; SOIC16; tube
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer; hex
Number of channels: 6
Technology: CMOS
Mounting: SMD
Case: SOIC16
Operating temperature: -55...125°C
Kind of output: 3-state
Supply voltage: 3...18V DC
Number of inputs: 1
Kind of package: tube
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer,hex; Ch: 6; IN: 1; CMOS; SMD; SOIC16; tube
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer; hex
Number of channels: 6
Technology: CMOS
Mounting: SMD
Case: SOIC16
Operating temperature: -55...125°C
Kind of output: 3-state
Supply voltage: 3...18V DC
Number of inputs: 1
Kind of package: tube
на замовлення 9 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 51.20 грн |
| FJV1845FMTF |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 120V; 0.05A; 0.3W; SOT23,TO236AB
Collector current: 50mA
Mounting: SMD
Collector-emitter voltage: 120V
Power dissipation: 0.3W
Polarisation: bipolar
Type of transistor: NPN
Current gain: 300...600
Kind of package: reel; tape
Case: SOT23; TO236AB
Frequency: 50MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 120V; 0.05A; 0.3W; SOT23,TO236AB
Collector current: 50mA
Mounting: SMD
Collector-emitter voltage: 120V
Power dissipation: 0.3W
Polarisation: bipolar
Type of transistor: NPN
Current gain: 300...600
Kind of package: reel; tape
Case: SOT23; TO236AB
Frequency: 50MHz
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| HUF75639P3 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 56A; 200W; TO220AB
Mounting: THT
Power dissipation: 200W
Gate charge: 130nC
Polarisation: unipolar
Technology: UltraFET®
Drain current: 56A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO220AB
On-state resistance: 25mΩ
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 56A; 200W; TO220AB
Mounting: THT
Power dissipation: 200W
Gate charge: 130nC
Polarisation: unipolar
Technology: UltraFET®
Drain current: 56A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO220AB
On-state resistance: 25mΩ
на замовлення 78 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 186.52 грн |
| 10+ | 157.07 грн |
| 50+ | 111.22 грн |
| NC7WZ02L8X-L22185 |
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital
Type of integrated circuit: digital
Category: Gates, inverters
Description: IC: digital
Type of integrated circuit: digital
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Мінімальне замовлення: 5000 шт
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| FDWS9509L-F085 |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -65A; 107W; DFN8
Case: DFN8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Technology: PowerTrench®
Kind of package: reel; tape
Polarisation: unipolar
Drain current: -65A
Drain-source voltage: -40V
Gate charge: 67nC
On-state resistance: 13mΩ
Gate-source voltage: ±16V
Power dissipation: 107W
Application: automotive industry
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -65A; 107W; DFN8
Case: DFN8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Technology: PowerTrench®
Kind of package: reel; tape
Polarisation: unipolar
Drain current: -65A
Drain-source voltage: -40V
Gate charge: 67nC
On-state resistance: 13mΩ
Gate-source voltage: ±16V
Power dissipation: 107W
Application: automotive industry
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| RB751S40T1G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 40V; 30mA; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 40V
Load current: 30mA
Semiconductor structure: single diode
Max. forward voltage: 0.37V
Max. forward impulse current: 0.5A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 40V; 30mA; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 40V
Load current: 30mA
Semiconductor structure: single diode
Max. forward voltage: 0.37V
Max. forward impulse current: 0.5A
Kind of package: reel; tape
на замовлення 1 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 457.16 грн |
| M74VHC1GU04DTT1G |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; inverter; NOT; Ch: 1; IN: 1; CMOS; SMD; TSOP5; VHC; VHC
Case: TSOP5
Number of inputs: 1
Kind of package: reel; tape
Family: VHC
Kind of integrated circuit: inverter
Number of channels: 1
Mounting: SMD
Supply voltage: 2...5.5V DC
Manufacturer series: VHC
Kind of gate: NOT
Type of integrated circuit: digital
Operating temperature: -55...125°C
Technology: CMOS
Category: Gates, inverters
Description: IC: digital; inverter; NOT; Ch: 1; IN: 1; CMOS; SMD; TSOP5; VHC; VHC
Case: TSOP5
Number of inputs: 1
Kind of package: reel; tape
Family: VHC
Kind of integrated circuit: inverter
Number of channels: 1
Mounting: SMD
Supply voltage: 2...5.5V DC
Manufacturer series: VHC
Kind of gate: NOT
Type of integrated circuit: digital
Operating temperature: -55...125°C
Technology: CMOS
на замовлення 2654 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 18+ | 26.52 грн |
| 20+ | 21.23 грн |
| 24+ | 18.25 грн |
| 27+ | 16.13 грн |
| 50+ | 12.40 грн |
| 100+ | 8.91 грн |
| 136+ | 7.22 грн |
| 373+ | 6.79 грн |
| 1000+ | 6.54 грн |
| MC74LCXU04DG |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; hex,inverter; NOT; Ch: 6; IN: 1; CMOS; SMD; SOIC14; tube
Case: SOIC14
Number of inputs: 1
Kind of package: tube
Family: LCXU
Kind of integrated circuit: hex; inverter
Number of channels: 6
Mounting: SMD
Supply voltage: 1.5...3.6V DC
Kind of gate: NOT
Type of integrated circuit: digital
Operating temperature: -40...85°C
Integrated circuit features: tolerates a voltage of 5V on the inputs
Technology: CMOS
Category: Gates, inverters
Description: IC: digital; hex,inverter; NOT; Ch: 6; IN: 1; CMOS; SMD; SOIC14; tube
Case: SOIC14
Number of inputs: 1
Kind of package: tube
Family: LCXU
Kind of integrated circuit: hex; inverter
Number of channels: 6
Mounting: SMD
Supply voltage: 1.5...3.6V DC
Kind of gate: NOT
Type of integrated circuit: digital
Operating temperature: -40...85°C
Integrated circuit features: tolerates a voltage of 5V on the inputs
Technology: CMOS
на замовлення 258 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 67.66 грн |
| 11+ | 38.80 грн |
| 25+ | 30.31 грн |
| 38+ | 25.90 грн |
| 55+ | 24.88 грн |
| 104+ | 24.45 грн |
| 110+ | 23.52 грн |
| MJD41CRLG |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 6A; 20W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 6A
Power dissipation: 20W
Case: DPAK
Current gain: 15...75
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 6A; 20W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 6A
Power dissipation: 20W
Case: DPAK
Current gain: 15...75
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
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| MJD41CT4G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 6A; 20W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 6A
Power dissipation: 20W
Case: DPAK
Current gain: 15...75
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 6A; 20W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 6A
Power dissipation: 20W
Case: DPAK
Current gain: 15...75
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
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| NJVMJD41CT4G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 6A; 20W; DPAK; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 6A
Power dissipation: 20W
Case: DPAK
Current gain: 15...75
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 6A; 20W; DPAK; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 6A
Power dissipation: 20W
Case: DPAK
Current gain: 15...75
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
Application: automotive industry
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| MC100ELT25DG |
|
Виробник: ONSEMI
Category: Level translators
Description: IC: digital; logic level voltage translator; Ch: 1; 4.5÷5.5VDC
Mounting: SMD
Case: SO8
Kind of package: tube
Manufacturer series: 100ELT
Number of channels: 1
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Number of inputs: 2
Number of outputs: 1
Kind of integrated circuit: logic level voltage translator
Type of integrated circuit: digital
Category: Level translators
Description: IC: digital; logic level voltage translator; Ch: 1; 4.5÷5.5VDC
Mounting: SMD
Case: SO8
Kind of package: tube
Manufacturer series: 100ELT
Number of channels: 1
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Number of inputs: 2
Number of outputs: 1
Kind of integrated circuit: logic level voltage translator
Type of integrated circuit: digital
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| MC100ELT23DTG |
|
Виробник: ONSEMI
Category: Level translators
Description: IC: digital; logic level voltage translator; Ch: 2; 4.75÷5.25VDC
Mounting: SMD
Case: TSSOP8
Kind of package: tube
Manufacturer series: 100ELT
Number of channels: 2
Operating temperature: -40...85°C
Supply voltage: 4.75...5.25V DC
Number of inputs: 4
Number of outputs: 2
Kind of integrated circuit: logic level voltage translator
Type of integrated circuit: digital
Category: Level translators
Description: IC: digital; logic level voltage translator; Ch: 2; 4.75÷5.25VDC
Mounting: SMD
Case: TSSOP8
Kind of package: tube
Manufacturer series: 100ELT
Number of channels: 2
Operating temperature: -40...85°C
Supply voltage: 4.75...5.25V DC
Number of inputs: 4
Number of outputs: 2
Kind of integrated circuit: logic level voltage translator
Type of integrated circuit: digital
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| BAS16HT3G |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 200mA; 6ns; SOD323; Ufmax: 1V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 6ns
Case: SOD323
Max. forward voltage: 1V
Max. forward impulse current: 0.2A
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 200mA; 6ns; SOD323; Ufmax: 1V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 6ns
Case: SOD323
Max. forward voltage: 1V
Max. forward impulse current: 0.2A
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| SBAS16HT3G |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOD323; Ufmax: 1.25V; Ir: 30uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Case: SOD323
Max. forward voltage: 1.25V
Power dissipation: 0.2W
Kind of package: reel; tape
Max. forward impulse current: 36A
Application: automotive industry
Leakage current: 30µA
Capacitance: 2pF
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOD323; Ufmax: 1.25V; Ir: 30uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Case: SOD323
Max. forward voltage: 1.25V
Power dissipation: 0.2W
Kind of package: reel; tape
Max. forward impulse current: 36A
Application: automotive industry
Leakage current: 30µA
Capacitance: 2pF
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| MBR745G |
|
Виробник: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 7.5A; TO220AC; Ufmax: 0.57V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 7.5A
Case: TO220AC
Semiconductor structure: single diode
Max. forward impulse current: 150A
Max. forward voltage: 0.57V
Heatsink thickness: 1.14...1.39mm
Max. load current: 7.5A
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 7.5A; TO220AC; Ufmax: 0.57V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 7.5A
Case: TO220AC
Semiconductor structure: single diode
Max. forward impulse current: 150A
Max. forward voltage: 0.57V
Heatsink thickness: 1.14...1.39mm
Max. load current: 7.5A
Kind of package: tube
на замовлення 241 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 55.78 грн |
| 10+ | 45.68 грн |
| 50+ | 38.88 грн |
| NSR201MXT5G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; X2DFN2; SMD; 2V; 50mA; reel,tape
Type of diode: Schottky switching
Case: X2DFN2
Mounting: SMD
Max. off-state voltage: 2V
Load current: 50mA
Semiconductor structure: single diode
Max. forward voltage: 0.32V
Kind of package: reel; tape
Capacitance: 0.15pF
Category: SMD Schottky diodes
Description: Diode: Schottky switching; X2DFN2; SMD; 2V; 50mA; reel,tape
Type of diode: Schottky switching
Case: X2DFN2
Mounting: SMD
Max. off-state voltage: 2V
Load current: 50mA
Semiconductor structure: single diode
Max. forward voltage: 0.32V
Kind of package: reel; tape
Capacitance: 0.15pF
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| FCH190N65F-F155 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20.6A; Idm: 61.8A; 208W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20.6A
Pulsed drain current: 61.8A
Power dissipation: 208W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20.6A; Idm: 61.8A; 208W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20.6A
Pulsed drain current: 61.8A
Power dissipation: 208W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
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| NVB190N65S3F |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 60A; 162W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Power dissipation: 162W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 34nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 60A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 60A; 162W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Power dissipation: 162W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 34nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 60A
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| FCP190N65F |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20.6A; Idm: 61.8A; 208W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20.6A
Pulsed drain current: 61.8A
Power dissipation: 208W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20.6A; Idm: 61.8A; 208W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20.6A
Pulsed drain current: 61.8A
Power dissipation: 208W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
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| FCP190N65S3 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 17A; Idm: 42.5A; 144W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 17A
Pulsed drain current: 42.5A
Power dissipation: 144W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 33nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 17A; Idm: 42.5A; 144W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 17A
Pulsed drain current: 42.5A
Power dissipation: 144W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 33nC
Kind of package: tube
Kind of channel: enhancement
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| FCP190N65S3R0 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 17A; Idm: 42.5A; 144W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 17A
Pulsed drain current: 42.5A
Power dissipation: 144W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 33nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 17A; Idm: 42.5A; 144W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 17A
Pulsed drain current: 42.5A
Power dissipation: 144W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 33nC
Kind of package: tube
Kind of channel: enhancement
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| NTB190N65S3HF |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 50A; 162W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Power dissipation: 162W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 34nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 50A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 50A; 162W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Power dissipation: 162W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 34nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 50A
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Мінімальне замовлення: 800 шт
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| NTP190N65S3HF |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 50A; 162W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Power dissipation: 162W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 34nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 50A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 50A; 162W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Power dissipation: 162W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 34nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 50A
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Мінімальне замовлення: 800 шт
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| NTHL190N65S3HF |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12.7A; Idm: 50A; 162W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12.7A
Power dissipation: 162W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.165Ω
Mounting: THT
Gate charge: 34nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 50A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12.7A; Idm: 50A; 162W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12.7A
Power dissipation: 162W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.165Ω
Mounting: THT
Gate charge: 34nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 50A
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Мінімальне замовлення: 450 шт
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| NTMT190N65S3H |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 16A; Idm: 45A; 129W; TDFN4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 16A
Power dissipation: 129W
Case: TDFN4
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 31nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 45A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 16A; Idm: 45A; 129W; TDFN4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 16A
Power dissipation: 129W
Case: TDFN4
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 31nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 45A
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.