| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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| BSS138 | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 50V; 0.22A; 0.36W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 50V Drain current: 0.22A Power dissipation: 0.36W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 6Ω Mounting: SMD Gate charge: 2.4nC Kind of package: reel; tape Kind of channel: enhancement Features of semiconductor devices: logic level |
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В кошику од. на суму грн. | |||||||||||||||||
| HUFA75645S3S | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 75A; 310W; TO263AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 75A Power dissipation: 310W Case: TO263AB Gate-source voltage: ±20V On-state resistance: 14mΩ Mounting: SMD Gate charge: 198nC Kind of channel: enhancement |
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В кошику од. на суму грн. | |||||||||||||||||
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FDP050AN06A0 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 18A; 245W; TO220AB Case: TO220AB Mounting: THT Kind of package: tube Polarisation: unipolar Gate charge: 80nC On-state resistance: 11mΩ Drain current: 18A Gate-source voltage: ±20V Drain-source voltage: 60V Power dissipation: 245W Kind of channel: enhancement Type of transistor: N-MOSFET Technology: PowerTrench® |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| FDP054N10 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 144A; Idm: 576A; 263W; TO220-3 Case: TO220-3 Mounting: THT Kind of package: tube Polarisation: unipolar Gate charge: 156nC On-state resistance: 5.5mΩ Drain current: 144A Gate-source voltage: ±20V Drain-source voltage: 100V Power dissipation: 263W Pulsed drain current: 576A Kind of channel: enhancement Type of transistor: N-MOSFET |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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FQP8N80C | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 800V; 5.1A; Idm: 32A; 178W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 5.1A Power dissipation: 178W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 1.55Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 45nC Pulsed drain current: 32A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NRVB0530T1G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOD123; SMD; 30V; 0.5A; reel,tape Application: automotive industry Case: SOD123 Kind of package: reel; tape Mounting: SMD Type of diode: Schottky switching Semiconductor structure: single diode Max. forward voltage: 0.43V Load current: 0.5A Max. forward impulse current: 5.5A Max. off-state voltage: 30V |
на замовлення 6000 шт: термін постачання 21-30 дні (днів) |
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| NCP1253BSN65T1G | ONSEMI |
Category: Voltage regulators - DC/DC circuitsDescription: IC: PMIC; AC/DC switcher,PWM controller; TSOP6; flyback Type of integrated circuit: PMIC Kind of integrated circuit: AC/DC switcher; PWM controller Output current: 0.3...0.5A Frequency: 61...71kHz Mounting: SMD Case: TSOP6 Topology: flyback Number of channels: 1 Operating temperature: -40...125°C Operating voltage: 8.8...25.5V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| MC34064D-5G | ONSEMI |
Category: Watchdog and reset circuitsDescription: IC: supervisor circuit; voltage detector; open drain; SO8; Ch: 1 Type of integrated circuit: supervisor circuit Kind of integrated circuit: voltage detector Kind of RESET output: open drain Active logical level: low Case: SO8 Operating temperature: 0...70°C Mounting: SMD Integrated circuit features: manual reset; watchdog Manufacturer series: PRO Number of channels: 1 |
на замовлення 2201 шт: термін постачання 21-30 дні (днів) |
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| NCP1253BSN100T1G | ONSEMI |
Category: Voltage regulators - DC/DC circuitsDescription: IC: PMIC; AC/DC switcher,PWM controller; TSOP6; flyback Type of integrated circuit: PMIC Kind of integrated circuit: AC/DC switcher; PWM controller Output current: 0.3...0.5A Frequency: 92...108kHz Mounting: SMD Case: TSOP6 Topology: flyback Number of channels: 1 Operating temperature: -40...125°C Operating voltage: 8.8...25.5V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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BC818-40LT1G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 25V; 0.5A; 0.225W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 25V Collector current: 0.5A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 250...600 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| NSVBC818-40LT1G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 25V; 0.5A; 0.225W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 25V Collector current: 0.5A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 250...600 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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MMBD701LT1G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOT23; SMD; 70V; 10mA; reel,tape Type of diode: Schottky switching Mounting: SMD Max. off-state voltage: 70V Load current: 10mA Semiconductor structure: single diode Case: SOT23 Max. forward voltage: 0.5V Kind of package: reel; tape |
на замовлення 2052 шт: термін постачання 21-30 дні (днів) |
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MMBD7000LT1G | ONSEMI |
Category: SMD universal diodesDescription: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT23; Ufmax: 1.1V; reel,tape Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.2A Reverse recovery time: 4ns Semiconductor structure: double series Case: SOT23 Max. forward voltage: 1.1V Kind of package: reel; tape |
на замовлення 5490 шт: термін постачання 21-30 дні (днів) |
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MMBD1203 | ONSEMI |
Category: SMD universal diodesDescription: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT23; Ufmax: 1.1V; Ifsm: 2A Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.2A Reverse recovery time: 4ns Semiconductor structure: double series Case: SOT23 Max. forward voltage: 1.1V Kind of package: reel; tape Leakage current: 0.1mA Capacitance: 2pF Power dissipation: 0.35W Max. forward impulse current: 2A |
на замовлення 2870 шт: термін постачання 21-30 дні (днів) |
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MMBD1205 | ONSEMI |
Category: SMD universal diodesDescription: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT23; Ufmax: 1.1V; Ifsm: 2A Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.2A Reverse recovery time: 4ns Semiconductor structure: common anode; double Case: SOT23 Max. forward voltage: 1.1V Kind of package: reel; tape Leakage current: 0.1mA Capacitance: 2pF Power dissipation: 0.35W Max. forward impulse current: 2A |
на замовлення 2797 шт: термін постачання 21-30 дні (днів) |
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MMBD1201 | ONSEMI |
Category: SMD universal diodesDescription: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT23; Ufmax: 1.1V; Ifsm: 2A Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.2A Reverse recovery time: 4ns Semiconductor structure: single diode Case: SOT23 Max. forward voltage: 1.1V Kind of package: reel; tape Leakage current: 0.1mA Capacitance: 2pF Power dissipation: 0.35W Max. forward impulse current: 2A |
на замовлення 446 шт: термін постачання 21-30 дні (днів) |
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MMBD6050LT1G | ONSEMI |
Category: SMD universal diodesDescription: Diode: switching; SMD; 250V; 0.2A; 50ns; SOT23; Ufmax: 1.25V; 400mW Type of diode: switching Mounting: SMD Max. off-state voltage: 250V Load current: 0.2A Reverse recovery time: 50ns Semiconductor structure: single diode Case: SOT23 Max. forward voltage: 1.25V Leakage current: 0.1mA Capacitance: 5pF Power dissipation: 0.4W |
на замовлення 2400 шт: термін постачання 21-30 дні (днів) |
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| MMBD452LT1G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOT23; SMD; 30V; reel,tape Type of diode: Schottky switching Mounting: SMD Max. off-state voltage: 30V Semiconductor structure: double series Case: SOT23 Max. forward voltage: 0.6V Kind of package: reel; tape Capacitance: 1.5pF |
на замовлення 8990 шт: термін постачання 21-30 дні (днів) |
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MMBD6100LT1G | ONSEMI |
Category: SMD universal diodesDescription: Diode: switching; SMD; 70V; 0.2A; 4ns; SOT23; Ufmax: 1.1V; Ifsm: 0.5A Type of diode: switching Mounting: SMD Max. off-state voltage: 70V Load current: 0.2A Reverse recovery time: 4ns Semiconductor structure: common cathode; double Case: SOT23 Max. forward voltage: 1.1V Kind of package: reel; tape Capacitance: 2.5pF Power dissipation: 0.225W Max. forward impulse current: 0.5A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MMBD1504A | ONSEMI |
Category: SMD universal diodesDescription: Diode: switching; SMD; 200V; 0.2A; SOT23; Ufmax: 1.15V; Ifsm: 2A Type of diode: switching Mounting: SMD Max. off-state voltage: 200V Load current: 0.2A Semiconductor structure: common cathode; double Case: SOT23 Max. forward voltage: 1.15V Kind of package: reel; tape Capacitance: 4pF Power dissipation: 0.35W Max. forward impulse current: 2A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| MMBD4148 | ONSEMI |
Category: SMD universal diodesDescription: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT23; Ifsm: 2A; 350mW Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.2A Reverse recovery time: 4ns Semiconductor structure: single diode Case: SOT23 Kind of package: reel; tape Max. forward impulse current: 2A Capacitance: 4pF Power dissipation: 0.35W |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| MCH4020-TL-H | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; RF; 8V; 150mA; 400mW; SC82AB Type of transistor: NPN Polarisation: bipolar Kind of transistor: RF Collector-emitter voltage: 8V Collector current: 0.15A Power dissipation: 0.4W Case: SC82AB Current gain: 60...150 Mounting: SMD Quantity in set/package: 3000pcs. Kind of package: reel; tape Frequency: 13...16GHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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FDP047AN08A0 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 75V; 80A; 310W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 75V Drain current: 80A Power dissipation: 310W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 11mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement |
на замовлення 76 шт: термін постачання 21-30 дні (днів) |
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6N139M | ONSEMI |
Category: Optocouplers - analog outputDescription: Optocoupler; THT; Ch: 1; OUT: Darlington; CTR@If: 500%@1.6mA; DIP8 Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: Darlington CTR@If: 500%@1.6mA Case: DIP8 Turn-on time: 25µs Turn-off time: 60µs Slew rate: 2.5kV/μs |
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В кошику од. на суму грн. | ||||||||||||||||
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6N139SDM | ONSEMI |
Category: Optocouplers - analog outputDescription: Optocoupler; SMD; Ch: 1; OUT: Darlington; 5kV; Gull wing 8; 10kV/μs Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: Darlington Insulation voltage: 5kV CTR@If: 500-1600%@1.6mA Case: Gull wing 8 Slew rate: 10kV/μs Manufacturer series: 6N139M |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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6N137M | ONSEMI |
Category: Optocouplers - digital outputDescription: Optocoupler; THT; Ch: 1; OUT: gate; CTR@If: 19-50%@16mA; 1Mbps; DIP8 Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: gate Transfer rate: 1Mbps Case: DIP8 Turn-on time: 75ns Turn-off time: 75ns CTR@If: 19-50%@16mA Slew rate: 2.5kV/μs |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| CAV24C32WE-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 32kbEEPROM; I2C; 4kx8bit; 2.5÷5.5V; 400kHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 32kb EEPROM Interface: I2C Memory organisation: 4kx8bit Operating voltage: 2.5...5.5V Clock frequency: 400kHz Mounting: SMD Case: SOIC8 Kind of interface: serial Operating temperature: -40...125°C Access time: 900ns Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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HCPL2631 | ONSEMI |
Category: Optocouplers - digital outputDescription: Optocoupler; THT; Ch: 2; OUT: open collector; 10Mbps; DIP8; 2.5kV/μs Type of optocoupler: optocoupler Mounting: THT Number of channels: 2 Kind of output: open collector Transfer rate: 10Mbps Case: DIP8 Turn-on time: 50ns Turn-off time: 12ns Slew rate: 2.5kV/μs |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| HCPL2631SDM | ONSEMI |
Category: Optocouplers - digital outputDescription: Optocoupler; SMD; Ch: 2; OUT: logic; Uinsul: 5kV; 10Mbps; Gull wing 8 Type of optocoupler: optocoupler Mounting: SMD Number of channels: 2 Kind of output: logic Insulation voltage: 5kV Transfer rate: 10Mbps Case: Gull wing 8 Turn-on time: 30ns Turn-off time: 10ns Slew rate: 10kV/μs Max. off-state voltage: 5V Output voltage: -0.5...7V Manufacturer series: HCPL2631M |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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MJ4502G | ONSEMI |
Category: PNP THT transistorsDescription: Transistor: PNP; bipolar; 90V; 30A; 200W; TO204,TO3 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 90V Collector current: 30A Power dissipation: 200W Case: TO3; TO204 Current gain: 25...100 Mounting: THT Kind of package: in-tray Frequency: 2MHz |
на замовлення 112 шт: термін постачання 21-30 дні (днів) |
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| NSVT1418LT1G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 160V; 1A; 0.42W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 160V Collector current: 1A Power dissipation: 0.42W Case: SOT23; TO236AB Current gain: 100...400 Mounting: SMD Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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FDA032N08 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 70V; 120A; Idm: 940A; 37.5W; TO3PN Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 70V Drain current: 120A Pulsed drain current: 940A Power dissipation: 37.5W Case: TO3PN Gate-source voltage: ±20V On-state resistance: 3.2mΩ Mounting: THT Gate charge: 0.22µC Kind of package: tube Kind of channel: enhancement |
на замовлення 37 шт: термін постачання 21-30 дні (днів) |
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| N64S830HAT22I | ONSEMI |
Category: Serial SRAM memories - integrated circ.Description: IC: SRAM memory; 64kbSRAM; 8kx8bit; 2.7÷3.6V; TSSOP8; -40÷85°C Mounting: SMD Operating temperature: -40...85°C Operating voltage: 2.7...3.6V Memory: 64kb SRAM Type of integrated circuit: SRAM memory Case: TSSOP8 Kind of interface: serial Kind of memory: SRAM Memory organisation: 8kx8bit |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| N01S830BAT22I | ONSEMI |
Category: Serial SRAM memories - integrated circ.Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.5÷5.5V; TSSOP8; -40÷85°C Mounting: SMD Operating temperature: -40...85°C Operating voltage: 2.5...5.5V Memory: 1Mb SRAM Type of integrated circuit: SRAM memory Case: TSSOP8 Kind of interface: serial Kind of memory: SRAM Memory organisation: 128kx8bit |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| N01S830BAT22IT | ONSEMI |
Category: Serial SRAM memories - integrated circ.Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.5÷5.5V; TSSOP8; -40÷85°C Mounting: SMD Operating temperature: -40...85°C Operating voltage: 2.5...5.5V Memory: 1Mb SRAM Type of integrated circuit: SRAM memory Case: TSSOP8 Kind of interface: serial Kind of memory: SRAM Memory organisation: 128kx8bit |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| N01S830HAT22I | ONSEMI |
Category: Serial SRAM memories - integrated circ.Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.5÷5.5V; TSSOP8; -40÷85°C Mounting: SMD Operating temperature: -40...85°C Operating voltage: 2.5...5.5V Memory: 1Mb SRAM Type of integrated circuit: SRAM memory Case: TSSOP8 Kind of interface: serial Kind of memory: SRAM Memory organisation: 128kx8bit |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| N01S830HAT22IT | ONSEMI |
Category: Serial SRAM memories - integrated circ.Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.5÷5.5V; TSSOP8; -40÷85°C Mounting: SMD Operating temperature: -40...85°C Operating voltage: 2.5...5.5V Memory: 1Mb SRAM Type of integrated circuit: SRAM memory Case: TSSOP8 Kind of interface: serial Kind of memory: SRAM Memory organisation: 128kx8bit |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| N25S830HAS22I | ONSEMI |
Category: Serial SRAM memories - integrated circ.Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 2.7÷3.6V; SOIC8; -40÷85°C Mounting: SMD Operating temperature: -40...85°C Operating voltage: 2.7...3.6V Memory: 256kb SRAM Type of integrated circuit: SRAM memory Case: SOIC8 Kind of interface: serial Kind of memory: SRAM Memory organisation: 32kx8bit |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| N25S830HAT22I | ONSEMI |
Category: Serial SRAM memories - integrated circ.Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 2.7÷3.6V; TSSOP8; -40÷85°C Mounting: SMD Operating temperature: -40...85°C Operating voltage: 2.7...3.6V Memory: 256kb SRAM Type of integrated circuit: SRAM memory Case: TSSOP8 Kind of interface: serial Kind of memory: SRAM Memory organisation: 32kx8bit |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| N64S830HAS22I | ONSEMI |
Category: Serial SRAM memories - integrated circ.Description: IC: SRAM memory; 64kbSRAM; 8kx8bit; 2.7÷3.6V; SOIC8; -40÷85°C Mounting: SMD Operating temperature: -40...85°C Operating voltage: 2.7...3.6V Memory: 64kb SRAM Type of integrated circuit: SRAM memory Case: SOIC8 Kind of interface: serial Kind of memory: SRAM Memory organisation: 8kx8bit |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NXV08A170DB2 | ONSEMI |
Category: Transistor modules MOSFETDescription: Module; transistor/transistor; 80V; 200A; APM12-CBA; THT; Ugs: ±20V Drain-source voltage: 80V Drain current: 200A Case: APM12-CBA Gate-source voltage: ±20V On-state resistance: 2.4mΩ Kind of package: in-tray Electrical mounting: THT Type of semiconductor module: MOSFET transistor Mechanical mounting: screw Semiconductor structure: transistor/transistor Topology: MOSFET half-bridge |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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NCP1034DR2G | ONSEMI |
Category: Voltage regulators - DC/DC circuitsDescription: IC: PMIC; AC/DC switcher,PWM controller; SO16; buck; 10÷18VDC Type of integrated circuit: PMIC Kind of integrated circuit: AC/DC switcher; PWM controller Output current: 2A Frequency: 170...430kHz Mounting: SMD Case: SO16 Topology: buck Number of channels: 1 Operating temperature: -40...125°C Operating voltage: 10...18V DC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MID400 | ONSEMI |
Category: Optocouplers - digital outputDescription: Optocoupler; THT; Ch: 1; OUT: logic; Uinsul: 2.5kV; DIP8; Uout: 7V Turn-on time: 1µs Mounting: THT Type of optocoupler: optocoupler Number of channels: 1 Output voltage: 7V Kind of output: logic Insulation voltage: 2.5kV Turn-off time: 1µs Case: DIP8 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| 2SC5242OTU | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 250V; 17A; 130W; TO3P Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 250V Collector current: 17A Power dissipation: 130W Case: TO3P Mounting: THT Frequency: 30MHz Kind of package: tube |
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В кошику од. на суму грн. | |||||||||||||||||
| NCP1562ADBR2G | ONSEMI |
Category: Voltage regulators - DC/DC circuitsDescription: IC: PMIC; Uin: 100V; Uout: 20V; TSSOP16; forward Type of integrated circuit: PMIC Case: TSSOP16 Mounting: SMD Operating temperature: -40...125°C Frequency: 222kHz...1MHz Output voltage: 20V Input voltage: 100V Output current: 1...2.5A Topology: forward |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| FGY120T65SPD-F085 | ONSEMI |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 120A; 441W; TO247-3 Case: TO247-3 Mounting: THT Kind of package: tube Power dissipation: 441W Pulsed collector current: 378A Collector-emitter voltage: 650V Gate charge: 162nC Type of transistor: IGBT Gate-emitter voltage: ±20V Collector current: 120A |
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В кошику од. на суму грн. | |||||||||||||||||
| AFGY120T65SPD | ONSEMI |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 120A; 357W; TO247-3 Case: TO247-3 Mounting: THT Kind of package: tube Power dissipation: 357W Pulsed collector current: 360A Collector-emitter voltage: 650V Gate charge: 125nC Type of transistor: IGBT Gate-emitter voltage: ±20V Collector current: 120A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
|
TIP29AG | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 60V; 1A; 30W; TO220AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 1A Power dissipation: 30W Case: TO220AB Current gain: 15...75 Mounting: THT Kind of package: tube Frequency: 3MHz |
на замовлення 84 шт: термін постачання 21-30 дні (днів) |
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TIP29CG | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 100V; 1A; 30W; TO220AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 1A Power dissipation: 30W Case: TO220AB Current gain: 15...75 Mounting: THT Kind of package: tube Frequency: 3MHz |
на замовлення 48 шт: термін постачання 21-30 дні (днів) |
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TIP29BG | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 80V; 1A; 30W; TO220AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 1A Power dissipation: 30W Case: TO220AB Current gain: 15...75 Mounting: THT Kind of package: tube Frequency: 3MHz |
на замовлення 44 шт: термін постачання 21-30 дні (днів) |
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| NCV3063DR2G | ONSEMI |
Category: Voltage regulators - DC/DC circuitsDescription: PMIC; DC/DC converter; SO8; SMD; reel,tape; automotive industry Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Case: SO8 Mounting: SMD Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NCV3063MNTXG | ONSEMI |
Category: Voltage regulators - DC/DC circuitsDescription: PMIC; DC/DC converter; DFN8; SMD; reel,tape; automotive industry Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Case: DFN8 Mounting: SMD Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NLAS2750MUTAG | ONSEMI |
Category: Analog multiplexers and switchesDescription: IC: analog switch; Ch: 2; UQFN10; 1.8÷5.5VDC; reel,tape; 250nA Type of integrated circuit: analog switch Kind of package: reel; tape Mounting: SMD Kind of output: SPDT x2 Case: UQFN10 Operating temperature: -40...85°C Quiescent current: 250nA Supply voltage: 1.8...5.5V DC Number of channels: 2 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
|
SBE805-TL-W | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOT25; SMD; 30V; 0.5A; 10ns; reel,tape Reverse recovery time: 10ns Leakage current: 30µA Load current: 0.5A Max. forward voltage: 0.55V Max. forward impulse current: 5A Max. off-state voltage: 30V Semiconductor structure: double independent Kind of package: reel; tape Type of diode: Schottky switching Mounting: SMD Case: SOT25 Capacitance: 16pF |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
SBE807-TL-W | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SOT25; SMD; 30V; 1A; 10ns; reel,tape Reverse recovery time: 10ns Leakage current: 15µA Load current: 1A Max. forward voltage: 0.53V Max. forward impulse current: 10A Max. off-state voltage: 30V Semiconductor structure: double independent Kind of package: reel; tape Type of diode: Schottky rectifying Mounting: SMD Case: SOT25 Capacitance: 27pF |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
BZX85C5V1 | ONSEMI |
Category: THT Zener diodesDescription: Diode: Zener; 1W; 5.1V; bulk; DO41; single diode; BZX85C Type of diode: Zener Power dissipation: 1W Zener voltage: 5.1V Mounting: THT Semiconductor structure: single diode Manufacturer series: BZX85C Tolerance: ±5% Kind of package: bulk Case: DO41 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
SBAS16LT1G | ONSEMI |
Category: SMD universal diodesDescription: Diode: switching; SMD; 100V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ir: 30uA Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.2A Reverse recovery time: 6ns Semiconductor structure: single diode Capacitance: 2pF Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 0.5A Leakage current: 30µA Power dissipation: 0.3W Kind of package: reel; tape Application: automotive industry |
на замовлення 1719 шт: термін постачання 21-30 дні (днів) |
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| FXMA108BQX | ONSEMI |
Category: Level translatorsDescription: IC: digital; Ch: 8; 1.65÷5.5VDC; SMD; DQFN20; -40÷85°C; reel,tape Type of integrated circuit: digital Kind of integrated circuit: 3-state; logic level voltage translator; non-inverting Number of channels: 8 Supply voltage: 1.65...5.5V DC Mounting: SMD Case: DQFN20 Operating temperature: -40...85°C Kind of package: reel; tape Number of inputs: 8 Number of outputs: 8 Integrated circuit features: auto-direction sensing Frequency: 100MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
|
SMUN5230DW1T1G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; R1: 1kΩ; R2: 1kΩ Mounting: SMD Kind of package: reel; tape Collector current: 0.1A Power dissipation: 0.25W Collector-emitter voltage: 50V Base resistor: 1kΩ Base-emitter resistor: 1kΩ Application: automotive industry Polarisation: bipolar Kind of transistor: BRT Case: SC70-6; SC88; SOT363 Type of transistor: NPN x2 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
TIP42C | ONSEMI |
Category: PNP THT transistorsDescription: Transistor: PNP; bipolar; 100V; 6A; 65W; TO220AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 6A Case: TO220AB Mounting: THT Frequency: 3MHz Power dissipation: 65W Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. |
| BSS138 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 0.22A; 0.36W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.22A
Power dissipation: 0.36W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 6Ω
Mounting: SMD
Gate charge: 2.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 0.22A; 0.36W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.22A
Power dissipation: 0.36W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 6Ω
Mounting: SMD
Gate charge: 2.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
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| HUFA75645S3S |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 75A; 310W; TO263AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 75A
Power dissipation: 310W
Case: TO263AB
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 198nC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 75A; 310W; TO263AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 75A
Power dissipation: 310W
Case: TO263AB
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 198nC
Kind of channel: enhancement
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од. на суму грн.
| FDP050AN06A0 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 18A; 245W; TO220AB
Case: TO220AB
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Gate charge: 80nC
On-state resistance: 11mΩ
Drain current: 18A
Gate-source voltage: ±20V
Drain-source voltage: 60V
Power dissipation: 245W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: PowerTrench®
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 18A; 245W; TO220AB
Case: TO220AB
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Gate charge: 80nC
On-state resistance: 11mΩ
Drain current: 18A
Gate-source voltage: ±20V
Drain-source voltage: 60V
Power dissipation: 245W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: PowerTrench®
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од. на суму грн.
| FDP054N10 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 144A; Idm: 576A; 263W; TO220-3
Case: TO220-3
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Gate charge: 156nC
On-state resistance: 5.5mΩ
Drain current: 144A
Gate-source voltage: ±20V
Drain-source voltage: 100V
Power dissipation: 263W
Pulsed drain current: 576A
Kind of channel: enhancement
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 144A; Idm: 576A; 263W; TO220-3
Case: TO220-3
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Gate charge: 156nC
On-state resistance: 5.5mΩ
Drain current: 144A
Gate-source voltage: ±20V
Drain-source voltage: 100V
Power dissipation: 263W
Pulsed drain current: 576A
Kind of channel: enhancement
Type of transistor: N-MOSFET
товару немає в наявності
В кошику
од. на суму грн.
| FQP8N80C |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 5.1A; Idm: 32A; 178W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 5.1A
Power dissipation: 178W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 1.55Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 45nC
Pulsed drain current: 32A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 5.1A; Idm: 32A; 178W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 5.1A
Power dissipation: 178W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 1.55Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 45nC
Pulsed drain current: 32A
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В кошику
од. на суму грн.
| NRVB0530T1G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.5A; reel,tape
Application: automotive industry
Case: SOD123
Kind of package: reel; tape
Mounting: SMD
Type of diode: Schottky switching
Semiconductor structure: single diode
Max. forward voltage: 0.43V
Load current: 0.5A
Max. forward impulse current: 5.5A
Max. off-state voltage: 30V
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.5A; reel,tape
Application: automotive industry
Case: SOD123
Kind of package: reel; tape
Mounting: SMD
Type of diode: Schottky switching
Semiconductor structure: single diode
Max. forward voltage: 0.43V
Load current: 0.5A
Max. forward impulse current: 5.5A
Max. off-state voltage: 30V
на замовлення 6000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 46+ | 9.45 грн |
| 59+ | 6.86 грн |
| 100+ | 6.54 грн |
| NCP1253BSN65T1G |
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Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; TSOP6; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.3...0.5A
Frequency: 61...71kHz
Mounting: SMD
Case: TSOP6
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 8.8...25.5V DC
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; TSOP6; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.3...0.5A
Frequency: 61...71kHz
Mounting: SMD
Case: TSOP6
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 8.8...25.5V DC
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В кошику
од. на суму грн.
| MC34064D-5G |
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Виробник: ONSEMI
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; open drain; SO8; Ch: 1
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: voltage detector
Kind of RESET output: open drain
Active logical level: low
Case: SO8
Operating temperature: 0...70°C
Mounting: SMD
Integrated circuit features: manual reset; watchdog
Manufacturer series: PRO
Number of channels: 1
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; open drain; SO8; Ch: 1
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: voltage detector
Kind of RESET output: open drain
Active logical level: low
Case: SO8
Operating temperature: 0...70°C
Mounting: SMD
Integrated circuit features: manual reset; watchdog
Manufacturer series: PRO
Number of channels: 1
на замовлення 2201 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 98+ | 33.32 грн |
| NCP1253BSN100T1G |
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Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; TSOP6; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.3...0.5A
Frequency: 92...108kHz
Mounting: SMD
Case: TSOP6
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 8.8...25.5V DC
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; TSOP6; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.3...0.5A
Frequency: 92...108kHz
Mounting: SMD
Case: TSOP6
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 8.8...25.5V DC
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| BC818-40LT1G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 25V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 250...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 25V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 250...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
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| NSVBC818-40LT1G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 25V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 250...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 25V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 250...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
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В кошику
од. на суму грн.
| MMBD701LT1G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 70V; 10mA; reel,tape
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 10mA
Semiconductor structure: single diode
Case: SOT23
Max. forward voltage: 0.5V
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 70V; 10mA; reel,tape
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 10mA
Semiconductor structure: single diode
Case: SOT23
Max. forward voltage: 0.5V
Kind of package: reel; tape
на замовлення 2052 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 30+ | 14.60 грн |
| 61+ | 6.54 грн |
| 72+ | 5.58 грн |
| 81+ | 4.93 грн |
| 100+ | 4.31 грн |
| 250+ | 3.60 грн |
| MMBD7000LT1G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT23; Ufmax: 1.1V; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: double series
Case: SOT23
Max. forward voltage: 1.1V
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT23; Ufmax: 1.1V; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: double series
Case: SOT23
Max. forward voltage: 1.1V
Kind of package: reel; tape
на замовлення 5490 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 63+ | 6.87 грн |
| 76+ | 5.26 грн |
| 112+ | 3.57 грн |
| 134+ | 2.99 грн |
| 250+ | 2.37 грн |
| 500+ | 2.00 грн |
| 1000+ | 1.71 грн |
| 3000+ | 1.37 грн |
| MMBD1203 |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT23; Ufmax: 1.1V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: double series
Case: SOT23
Max. forward voltage: 1.1V
Kind of package: reel; tape
Leakage current: 0.1mA
Capacitance: 2pF
Power dissipation: 0.35W
Max. forward impulse current: 2A
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT23; Ufmax: 1.1V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: double series
Case: SOT23
Max. forward voltage: 1.1V
Kind of package: reel; tape
Leakage current: 0.1mA
Capacitance: 2pF
Power dissipation: 0.35W
Max. forward impulse current: 2A
на замовлення 2870 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 39+ | 11.16 грн |
| 49+ | 8.29 грн |
| 53+ | 7.65 грн |
| 100+ | 5.54 грн |
| 250+ | 4.74 грн |
| 500+ | 4.15 грн |
| 1000+ | 3.56 грн |
| MMBD1205 |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT23; Ufmax: 1.1V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: common anode; double
Case: SOT23
Max. forward voltage: 1.1V
Kind of package: reel; tape
Leakage current: 0.1mA
Capacitance: 2pF
Power dissipation: 0.35W
Max. forward impulse current: 2A
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT23; Ufmax: 1.1V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: common anode; double
Case: SOT23
Max. forward voltage: 1.1V
Kind of package: reel; tape
Leakage current: 0.1mA
Capacitance: 2pF
Power dissipation: 0.35W
Max. forward impulse current: 2A
на замовлення 2797 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 36+ | 12.02 грн |
| 46+ | 8.69 грн |
| 65+ | 6.19 грн |
| 100+ | 5.29 грн |
| 500+ | 3.68 грн |
| 1000+ | 3.17 грн |
| MMBD1201 |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT23; Ufmax: 1.1V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOT23
Max. forward voltage: 1.1V
Kind of package: reel; tape
Leakage current: 0.1mA
Capacitance: 2pF
Power dissipation: 0.35W
Max. forward impulse current: 2A
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT23; Ufmax: 1.1V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOT23
Max. forward voltage: 1.1V
Kind of package: reel; tape
Leakage current: 0.1mA
Capacitance: 2pF
Power dissipation: 0.35W
Max. forward impulse current: 2A
на замовлення 446 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 63+ | 6.87 грн |
| 80+ | 5.02 грн |
| 115+ | 3.48 грн |
| MMBD6050LT1G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SOT23; Ufmax: 1.25V; 400mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SOT23
Max. forward voltage: 1.25V
Leakage current: 0.1mA
Capacitance: 5pF
Power dissipation: 0.4W
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SOT23; Ufmax: 1.25V; 400mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SOT23
Max. forward voltage: 1.25V
Leakage current: 0.1mA
Capacitance: 5pF
Power dissipation: 0.4W
на замовлення 2400 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 63+ | 6.87 грн |
| 105+ | 3.83 грн |
| 156+ | 2.57 грн |
| 183+ | 2.18 грн |
| 500+ | 1.54 грн |
| 1000+ | 1.35 грн |
| 1500+ | 1.32 грн |
| MMBD452LT1G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; reel,tape
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 30V
Semiconductor structure: double series
Case: SOT23
Max. forward voltage: 0.6V
Kind of package: reel; tape
Capacitance: 1.5pF
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; reel,tape
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 30V
Semiconductor structure: double series
Case: SOT23
Max. forward voltage: 0.6V
Kind of package: reel; tape
Capacitance: 1.5pF
на замовлення 8990 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 36+ | 12.02 грн |
| 43+ | 9.41 грн |
| 48+ | 8.37 грн |
| 55+ | 7.26 грн |
| 100+ | 5.98 грн |
| 250+ | 5.74 грн |
| MMBD6100LT1G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.2A; 4ns; SOT23; Ufmax: 1.1V; Ifsm: 0.5A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: common cathode; double
Case: SOT23
Max. forward voltage: 1.1V
Kind of package: reel; tape
Capacitance: 2.5pF
Power dissipation: 0.225W
Max. forward impulse current: 0.5A
Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.2A; 4ns; SOT23; Ufmax: 1.1V; Ifsm: 0.5A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: common cathode; double
Case: SOT23
Max. forward voltage: 1.1V
Kind of package: reel; tape
Capacitance: 2.5pF
Power dissipation: 0.225W
Max. forward impulse current: 0.5A
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| MMBD1504A |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; SOT23; Ufmax: 1.15V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.2A
Semiconductor structure: common cathode; double
Case: SOT23
Max. forward voltage: 1.15V
Kind of package: reel; tape
Capacitance: 4pF
Power dissipation: 0.35W
Max. forward impulse current: 2A
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; SOT23; Ufmax: 1.15V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.2A
Semiconductor structure: common cathode; double
Case: SOT23
Max. forward voltage: 1.15V
Kind of package: reel; tape
Capacitance: 4pF
Power dissipation: 0.35W
Max. forward impulse current: 2A
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| MMBD4148 |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT23; Ifsm: 2A; 350mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOT23
Kind of package: reel; tape
Max. forward impulse current: 2A
Capacitance: 4pF
Power dissipation: 0.35W
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT23; Ifsm: 2A; 350mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOT23
Kind of package: reel; tape
Max. forward impulse current: 2A
Capacitance: 4pF
Power dissipation: 0.35W
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| MCH4020-TL-H |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 8V; 150mA; 400mW; SC82AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 8V
Collector current: 0.15A
Power dissipation: 0.4W
Case: SC82AB
Current gain: 60...150
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 13...16GHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 8V; 150mA; 400mW; SC82AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 8V
Collector current: 0.15A
Power dissipation: 0.4W
Case: SC82AB
Current gain: 60...150
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 13...16GHz
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| FDP047AN08A0 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 310W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 310W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 310W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 310W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 76 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 249.03 грн |
| 10+ | 175.42 грн |
| 50+ | 143.53 грн |
| 6N139M |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: Darlington; CTR@If: 500%@1.6mA; DIP8
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: Darlington
CTR@If: 500%@1.6mA
Case: DIP8
Turn-on time: 25µs
Turn-off time: 60µs
Slew rate: 2.5kV/μs
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: Darlington; CTR@If: 500%@1.6mA; DIP8
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: Darlington
CTR@If: 500%@1.6mA
Case: DIP8
Turn-on time: 25µs
Turn-off time: 60µs
Slew rate: 2.5kV/μs
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| 6N139SDM |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; 5kV; Gull wing 8; 10kV/μs
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: Darlington
Insulation voltage: 5kV
CTR@If: 500-1600%@1.6mA
Case: Gull wing 8
Slew rate: 10kV/μs
Manufacturer series: 6N139M
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; 5kV; Gull wing 8; 10kV/μs
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: Darlington
Insulation voltage: 5kV
CTR@If: 500-1600%@1.6mA
Case: Gull wing 8
Slew rate: 10kV/μs
Manufacturer series: 6N139M
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| 6N137M |
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Виробник: ONSEMI
Category: Optocouplers - digital output
Description: Optocoupler; THT; Ch: 1; OUT: gate; CTR@If: 19-50%@16mA; 1Mbps; DIP8
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: gate
Transfer rate: 1Mbps
Case: DIP8
Turn-on time: 75ns
Turn-off time: 75ns
CTR@If: 19-50%@16mA
Slew rate: 2.5kV/μs
Category: Optocouplers - digital output
Description: Optocoupler; THT; Ch: 1; OUT: gate; CTR@If: 19-50%@16mA; 1Mbps; DIP8
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: gate
Transfer rate: 1Mbps
Case: DIP8
Turn-on time: 75ns
Turn-off time: 75ns
CTR@If: 19-50%@16mA
Slew rate: 2.5kV/μs
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| CAV24C32WE-GT3 |
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Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 32kbEEPROM; I2C; 4kx8bit; 2.5÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 32kb EEPROM
Interface: I2C
Memory organisation: 4kx8bit
Operating voltage: 2.5...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 900ns
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 32kbEEPROM; I2C; 4kx8bit; 2.5÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 32kb EEPROM
Interface: I2C
Memory organisation: 4kx8bit
Operating voltage: 2.5...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 900ns
Kind of package: reel; tape
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| HCPL2631 |
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Виробник: ONSEMI
Category: Optocouplers - digital output
Description: Optocoupler; THT; Ch: 2; OUT: open collector; 10Mbps; DIP8; 2.5kV/μs
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 2
Kind of output: open collector
Transfer rate: 10Mbps
Case: DIP8
Turn-on time: 50ns
Turn-off time: 12ns
Slew rate: 2.5kV/μs
Category: Optocouplers - digital output
Description: Optocoupler; THT; Ch: 2; OUT: open collector; 10Mbps; DIP8; 2.5kV/μs
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 2
Kind of output: open collector
Transfer rate: 10Mbps
Case: DIP8
Turn-on time: 50ns
Turn-off time: 12ns
Slew rate: 2.5kV/μs
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| HCPL2631SDM |
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Виробник: ONSEMI
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 2; OUT: logic; Uinsul: 5kV; 10Mbps; Gull wing 8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: logic
Insulation voltage: 5kV
Transfer rate: 10Mbps
Case: Gull wing 8
Turn-on time: 30ns
Turn-off time: 10ns
Slew rate: 10kV/μs
Max. off-state voltage: 5V
Output voltage: -0.5...7V
Manufacturer series: HCPL2631M
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 2; OUT: logic; Uinsul: 5kV; 10Mbps; Gull wing 8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: logic
Insulation voltage: 5kV
Transfer rate: 10Mbps
Case: Gull wing 8
Turn-on time: 30ns
Turn-off time: 10ns
Slew rate: 10kV/μs
Max. off-state voltage: 5V
Output voltage: -0.5...7V
Manufacturer series: HCPL2631M
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| MJ4502G |
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Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 90V; 30A; 200W; TO204,TO3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 90V
Collector current: 30A
Power dissipation: 200W
Case: TO3; TO204
Current gain: 25...100
Mounting: THT
Kind of package: in-tray
Frequency: 2MHz
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 90V; 30A; 200W; TO204,TO3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 90V
Collector current: 30A
Power dissipation: 200W
Case: TO3; TO204
Current gain: 25...100
Mounting: THT
Kind of package: in-tray
Frequency: 2MHz
на замовлення 112 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 480.02 грн |
| NSVT1418LT1G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 160V; 1A; 0.42W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 1A
Power dissipation: 0.42W
Case: SOT23; TO236AB
Current gain: 100...400
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 160V; 1A; 0.42W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 1A
Power dissipation: 0.42W
Case: SOT23; TO236AB
Current gain: 100...400
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
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| FDA032N08 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 70V; 120A; Idm: 940A; 37.5W; TO3PN
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 70V
Drain current: 120A
Pulsed drain current: 940A
Power dissipation: 37.5W
Case: TO3PN
Gate-source voltage: ±20V
On-state resistance: 3.2mΩ
Mounting: THT
Gate charge: 0.22µC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 70V; 120A; Idm: 940A; 37.5W; TO3PN
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 70V
Drain current: 120A
Pulsed drain current: 940A
Power dissipation: 37.5W
Case: TO3PN
Gate-source voltage: ±20V
On-state resistance: 3.2mΩ
Mounting: THT
Gate charge: 0.22µC
Kind of package: tube
Kind of channel: enhancement
на замовлення 37 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 308.28 грн |
| 10+ | 236.82 грн |
| 30+ | 201.74 грн |
| N64S830HAT22I |
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Виробник: ONSEMI
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 64kbSRAM; 8kx8bit; 2.7÷3.6V; TSSOP8; -40÷85°C
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
Memory: 64kb SRAM
Type of integrated circuit: SRAM memory
Case: TSSOP8
Kind of interface: serial
Kind of memory: SRAM
Memory organisation: 8kx8bit
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 64kbSRAM; 8kx8bit; 2.7÷3.6V; TSSOP8; -40÷85°C
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
Memory: 64kb SRAM
Type of integrated circuit: SRAM memory
Case: TSSOP8
Kind of interface: serial
Kind of memory: SRAM
Memory organisation: 8kx8bit
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| N01S830BAT22I |
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Виробник: ONSEMI
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.5÷5.5V; TSSOP8; -40÷85°C
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.5...5.5V
Memory: 1Mb SRAM
Type of integrated circuit: SRAM memory
Case: TSSOP8
Kind of interface: serial
Kind of memory: SRAM
Memory organisation: 128kx8bit
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.5÷5.5V; TSSOP8; -40÷85°C
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.5...5.5V
Memory: 1Mb SRAM
Type of integrated circuit: SRAM memory
Case: TSSOP8
Kind of interface: serial
Kind of memory: SRAM
Memory organisation: 128kx8bit
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| N01S830BAT22IT |
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Виробник: ONSEMI
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.5÷5.5V; TSSOP8; -40÷85°C
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.5...5.5V
Memory: 1Mb SRAM
Type of integrated circuit: SRAM memory
Case: TSSOP8
Kind of interface: serial
Kind of memory: SRAM
Memory organisation: 128kx8bit
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.5÷5.5V; TSSOP8; -40÷85°C
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.5...5.5V
Memory: 1Mb SRAM
Type of integrated circuit: SRAM memory
Case: TSSOP8
Kind of interface: serial
Kind of memory: SRAM
Memory organisation: 128kx8bit
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| N01S830HAT22I |
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Виробник: ONSEMI
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.5÷5.5V; TSSOP8; -40÷85°C
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.5...5.5V
Memory: 1Mb SRAM
Type of integrated circuit: SRAM memory
Case: TSSOP8
Kind of interface: serial
Kind of memory: SRAM
Memory organisation: 128kx8bit
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.5÷5.5V; TSSOP8; -40÷85°C
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.5...5.5V
Memory: 1Mb SRAM
Type of integrated circuit: SRAM memory
Case: TSSOP8
Kind of interface: serial
Kind of memory: SRAM
Memory organisation: 128kx8bit
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| N01S830HAT22IT |
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Виробник: ONSEMI
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.5÷5.5V; TSSOP8; -40÷85°C
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.5...5.5V
Memory: 1Mb SRAM
Type of integrated circuit: SRAM memory
Case: TSSOP8
Kind of interface: serial
Kind of memory: SRAM
Memory organisation: 128kx8bit
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.5÷5.5V; TSSOP8; -40÷85°C
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.5...5.5V
Memory: 1Mb SRAM
Type of integrated circuit: SRAM memory
Case: TSSOP8
Kind of interface: serial
Kind of memory: SRAM
Memory organisation: 128kx8bit
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| N25S830HAS22I |
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Виробник: ONSEMI
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 2.7÷3.6V; SOIC8; -40÷85°C
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
Memory: 256kb SRAM
Type of integrated circuit: SRAM memory
Case: SOIC8
Kind of interface: serial
Kind of memory: SRAM
Memory organisation: 32kx8bit
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 2.7÷3.6V; SOIC8; -40÷85°C
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
Memory: 256kb SRAM
Type of integrated circuit: SRAM memory
Case: SOIC8
Kind of interface: serial
Kind of memory: SRAM
Memory organisation: 32kx8bit
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| N25S830HAT22I |
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Виробник: ONSEMI
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 2.7÷3.6V; TSSOP8; -40÷85°C
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
Memory: 256kb SRAM
Type of integrated circuit: SRAM memory
Case: TSSOP8
Kind of interface: serial
Kind of memory: SRAM
Memory organisation: 32kx8bit
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 2.7÷3.6V; TSSOP8; -40÷85°C
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
Memory: 256kb SRAM
Type of integrated circuit: SRAM memory
Case: TSSOP8
Kind of interface: serial
Kind of memory: SRAM
Memory organisation: 32kx8bit
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| N64S830HAS22I |
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Виробник: ONSEMI
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 64kbSRAM; 8kx8bit; 2.7÷3.6V; SOIC8; -40÷85°C
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
Memory: 64kb SRAM
Type of integrated circuit: SRAM memory
Case: SOIC8
Kind of interface: serial
Kind of memory: SRAM
Memory organisation: 8kx8bit
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 64kbSRAM; 8kx8bit; 2.7÷3.6V; SOIC8; -40÷85°C
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
Memory: 64kb SRAM
Type of integrated circuit: SRAM memory
Case: SOIC8
Kind of interface: serial
Kind of memory: SRAM
Memory organisation: 8kx8bit
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| NXV08A170DB2 |
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Виробник: ONSEMI
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 80V; 200A; APM12-CBA; THT; Ugs: ±20V
Drain-source voltage: 80V
Drain current: 200A
Case: APM12-CBA
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Kind of package: in-tray
Electrical mounting: THT
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Topology: MOSFET half-bridge
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 80V; 200A; APM12-CBA; THT; Ugs: ±20V
Drain-source voltage: 80V
Drain current: 200A
Case: APM12-CBA
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Kind of package: in-tray
Electrical mounting: THT
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Topology: MOSFET half-bridge
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| NCP1034DR2G |
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Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SO16; buck; 10÷18VDC
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 2A
Frequency: 170...430kHz
Mounting: SMD
Case: SO16
Topology: buck
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 10...18V DC
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SO16; buck; 10÷18VDC
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 2A
Frequency: 170...430kHz
Mounting: SMD
Case: SO16
Topology: buck
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 10...18V DC
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| MID400 |
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Виробник: ONSEMI
Category: Optocouplers - digital output
Description: Optocoupler; THT; Ch: 1; OUT: logic; Uinsul: 2.5kV; DIP8; Uout: 7V
Turn-on time: 1µs
Mounting: THT
Type of optocoupler: optocoupler
Number of channels: 1
Output voltage: 7V
Kind of output: logic
Insulation voltage: 2.5kV
Turn-off time: 1µs
Case: DIP8
Category: Optocouplers - digital output
Description: Optocoupler; THT; Ch: 1; OUT: logic; Uinsul: 2.5kV; DIP8; Uout: 7V
Turn-on time: 1µs
Mounting: THT
Type of optocoupler: optocoupler
Number of channels: 1
Output voltage: 7V
Kind of output: logic
Insulation voltage: 2.5kV
Turn-off time: 1µs
Case: DIP8
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| 2SC5242OTU |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 250V; 17A; 130W; TO3P
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 250V
Collector current: 17A
Power dissipation: 130W
Case: TO3P
Mounting: THT
Frequency: 30MHz
Kind of package: tube
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 250V; 17A; 130W; TO3P
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 250V
Collector current: 17A
Power dissipation: 130W
Case: TO3P
Mounting: THT
Frequency: 30MHz
Kind of package: tube
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| NCP1562ADBR2G |
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Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; Uin: 100V; Uout: 20V; TSSOP16; forward
Type of integrated circuit: PMIC
Case: TSSOP16
Mounting: SMD
Operating temperature: -40...125°C
Frequency: 222kHz...1MHz
Output voltage: 20V
Input voltage: 100V
Output current: 1...2.5A
Topology: forward
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; Uin: 100V; Uout: 20V; TSSOP16; forward
Type of integrated circuit: PMIC
Case: TSSOP16
Mounting: SMD
Operating temperature: -40...125°C
Frequency: 222kHz...1MHz
Output voltage: 20V
Input voltage: 100V
Output current: 1...2.5A
Topology: forward
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| FGY120T65SPD-F085 |
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Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 120A; 441W; TO247-3
Case: TO247-3
Mounting: THT
Kind of package: tube
Power dissipation: 441W
Pulsed collector current: 378A
Collector-emitter voltage: 650V
Gate charge: 162nC
Type of transistor: IGBT
Gate-emitter voltage: ±20V
Collector current: 120A
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 120A; 441W; TO247-3
Case: TO247-3
Mounting: THT
Kind of package: tube
Power dissipation: 441W
Pulsed collector current: 378A
Collector-emitter voltage: 650V
Gate charge: 162nC
Type of transistor: IGBT
Gate-emitter voltage: ±20V
Collector current: 120A
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| AFGY120T65SPD |
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Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 120A; 357W; TO247-3
Case: TO247-3
Mounting: THT
Kind of package: tube
Power dissipation: 357W
Pulsed collector current: 360A
Collector-emitter voltage: 650V
Gate charge: 125nC
Type of transistor: IGBT
Gate-emitter voltage: ±20V
Collector current: 120A
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 120A; 357W; TO247-3
Case: TO247-3
Mounting: THT
Kind of package: tube
Power dissipation: 357W
Pulsed collector current: 360A
Collector-emitter voltage: 650V
Gate charge: 125nC
Type of transistor: IGBT
Gate-emitter voltage: ±20V
Collector current: 120A
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| TIP29AG |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 30W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 30W
Case: TO220AB
Current gain: 15...75
Mounting: THT
Kind of package: tube
Frequency: 3MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 30W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 30W
Case: TO220AB
Current gain: 15...75
Mounting: THT
Kind of package: tube
Frequency: 3MHz
на замовлення 84 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 106.48 грн |
| 10+ | 63.39 грн |
| 50+ | 47.68 грн |
| TIP29CG |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 1A; 30W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 1A
Power dissipation: 30W
Case: TO220AB
Current gain: 15...75
Mounting: THT
Kind of package: tube
Frequency: 3MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 1A; 30W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 1A
Power dissipation: 30W
Case: TO220AB
Current gain: 15...75
Mounting: THT
Kind of package: tube
Frequency: 3MHz
на замовлення 48 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 75.57 грн |
| 10+ | 52.47 грн |
| TIP29BG |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 30W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 30W
Case: TO220AB
Current gain: 15...75
Mounting: THT
Kind of package: tube
Frequency: 3MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 30W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 30W
Case: TO220AB
Current gain: 15...75
Mounting: THT
Kind of package: tube
Frequency: 3MHz
на замовлення 44 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 85.01 грн |
| 10+ | 55.98 грн |
| NCV3063DR2G |
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Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; SO8; SMD; reel,tape; automotive industry
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; SO8; SMD; reel,tape; automotive industry
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
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| NCV3063MNTXG |
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Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; DFN8; SMD; reel,tape; automotive industry
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Case: DFN8
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; DFN8; SMD; reel,tape; automotive industry
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Case: DFN8
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
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| NLAS2750MUTAG |
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Виробник: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 2; UQFN10; 1.8÷5.5VDC; reel,tape; 250nA
Type of integrated circuit: analog switch
Kind of package: reel; tape
Mounting: SMD
Kind of output: SPDT x2
Case: UQFN10
Operating temperature: -40...85°C
Quiescent current: 250nA
Supply voltage: 1.8...5.5V DC
Number of channels: 2
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 2; UQFN10; 1.8÷5.5VDC; reel,tape; 250nA
Type of integrated circuit: analog switch
Kind of package: reel; tape
Mounting: SMD
Kind of output: SPDT x2
Case: UQFN10
Operating temperature: -40...85°C
Quiescent current: 250nA
Supply voltage: 1.8...5.5V DC
Number of channels: 2
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| SBE805-TL-W |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT25; SMD; 30V; 0.5A; 10ns; reel,tape
Reverse recovery time: 10ns
Leakage current: 30µA
Load current: 0.5A
Max. forward voltage: 0.55V
Max. forward impulse current: 5A
Max. off-state voltage: 30V
Semiconductor structure: double independent
Kind of package: reel; tape
Type of diode: Schottky switching
Mounting: SMD
Case: SOT25
Capacitance: 16pF
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT25; SMD; 30V; 0.5A; 10ns; reel,tape
Reverse recovery time: 10ns
Leakage current: 30µA
Load current: 0.5A
Max. forward voltage: 0.55V
Max. forward impulse current: 5A
Max. off-state voltage: 30V
Semiconductor structure: double independent
Kind of package: reel; tape
Type of diode: Schottky switching
Mounting: SMD
Case: SOT25
Capacitance: 16pF
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| SBE807-TL-W |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT25; SMD; 30V; 1A; 10ns; reel,tape
Reverse recovery time: 10ns
Leakage current: 15µA
Load current: 1A
Max. forward voltage: 0.53V
Max. forward impulse current: 10A
Max. off-state voltage: 30V
Semiconductor structure: double independent
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Case: SOT25
Capacitance: 27pF
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT25; SMD; 30V; 1A; 10ns; reel,tape
Reverse recovery time: 10ns
Leakage current: 15µA
Load current: 1A
Max. forward voltage: 0.53V
Max. forward impulse current: 10A
Max. off-state voltage: 30V
Semiconductor structure: double independent
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Case: SOT25
Capacitance: 27pF
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| BZX85C5V1 |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 1W; 5.1V; bulk; DO41; single diode; BZX85C
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 5.1V
Mounting: THT
Semiconductor structure: single diode
Manufacturer series: BZX85C
Tolerance: ±5%
Kind of package: bulk
Case: DO41
Category: THT Zener diodes
Description: Diode: Zener; 1W; 5.1V; bulk; DO41; single diode; BZX85C
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 5.1V
Mounting: THT
Semiconductor structure: single diode
Manufacturer series: BZX85C
Tolerance: ±5%
Kind of package: bulk
Case: DO41
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| SBAS16LT1G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ir: 30uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 0.5A
Leakage current: 30µA
Power dissipation: 0.3W
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ir: 30uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 0.5A
Leakage current: 30µA
Power dissipation: 0.3W
Kind of package: reel; tape
Application: automotive industry
на замовлення 1719 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 63+ | 6.87 грн |
| 76+ | 5.26 грн |
| 85+ | 4.70 грн |
| 129+ | 3.09 грн |
| FXMA108BQX |
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Виробник: ONSEMI
Category: Level translators
Description: IC: digital; Ch: 8; 1.65÷5.5VDC; SMD; DQFN20; -40÷85°C; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; logic level voltage translator; non-inverting
Number of channels: 8
Supply voltage: 1.65...5.5V DC
Mounting: SMD
Case: DQFN20
Operating temperature: -40...85°C
Kind of package: reel; tape
Number of inputs: 8
Number of outputs: 8
Integrated circuit features: auto-direction sensing
Frequency: 100MHz
Category: Level translators
Description: IC: digital; Ch: 8; 1.65÷5.5VDC; SMD; DQFN20; -40÷85°C; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; logic level voltage translator; non-inverting
Number of channels: 8
Supply voltage: 1.65...5.5V DC
Mounting: SMD
Case: DQFN20
Operating temperature: -40...85°C
Kind of package: reel; tape
Number of inputs: 8
Number of outputs: 8
Integrated circuit features: auto-direction sensing
Frequency: 100MHz
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| SMUN5230DW1T1G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; R1: 1kΩ; R2: 1kΩ
Mounting: SMD
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.25W
Collector-emitter voltage: 50V
Base resistor: 1kΩ
Base-emitter resistor: 1kΩ
Application: automotive industry
Polarisation: bipolar
Kind of transistor: BRT
Case: SC70-6; SC88; SOT363
Type of transistor: NPN x2
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; R1: 1kΩ; R2: 1kΩ
Mounting: SMD
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.25W
Collector-emitter voltage: 50V
Base resistor: 1kΩ
Base-emitter resistor: 1kΩ
Application: automotive industry
Polarisation: bipolar
Kind of transistor: BRT
Case: SC70-6; SC88; SOT363
Type of transistor: NPN x2
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| TIP42C |
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Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 100V; 6A; 65W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 6A
Case: TO220AB
Mounting: THT
Frequency: 3MHz
Power dissipation: 65W
Kind of package: tube
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 100V; 6A; 65W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 6A
Case: TO220AB
Mounting: THT
Frequency: 3MHz
Power dissipation: 65W
Kind of package: tube
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