| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| NSVDTA114EET1G | ONSEMI |
 Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416 Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.3W Case: SC75; SOT416 Current gain: 35...60 Mounting: SMD Quantity in set/package: 3000pcs. Kind of package: reel; tape Base resistor: 10kΩ Application: automotive industry Base-emitter resistor: 10kΩ |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| RS1B | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 100V; 1A; 150ns; SMA; Ufmax: 1.3V; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 100V Load current: 1A Reverse recovery time: 150ns Semiconductor structure: single diode Case: SMA Max. forward voltage: 1.3V Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| RS1BFA | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 100V; 0.8A; 150ns; SOD123F; Ufmax: 1.3V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 100V Load current: 0.8A Reverse recovery time: 150ns Semiconductor structure: single diode Case: SOD123F Max. forward voltage: 1.3V Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
 |
NRVHPRS1BFA | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 100V; 0.8A; 150ns; SOD123F; Ufmax: 1.3V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 100V Load current: 0.8A Reverse recovery time: 150ns Semiconductor structure: single diode Case: SOD123F Max. forward voltage: 1.3V Max. forward impulse current: 30A Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| NCP1616A1DR2G | ONSEMI |
Category: Integrated circuits - others Description: IC: PMIC; PFC controller; SO10; -40÷125°C; reel,tape; 9÷28VDC Type of integrated circuit: PMIC Kind of integrated circuit: PFC controller Mounting: SMD Case: SO10 Operating temperature: -40...125°C Kind of package: reel; tape Output current: -500...800mA Topology: boost Operating voltage: 9...28V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| NVMTS0D7N06CLTXG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 477A; Idm: 900A; 147.3W; DFNW8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 477A Pulsed drain current: 900A Power dissipation: 147.3W Case: DFNW8 Gate-source voltage: ±20V On-state resistance: 0.68mΩ Mounting: SMD Gate charge: 225nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| CAT25128YI-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 128kbEEPROM; SPI; 16kx8bit; 1.8÷5.5V; 20MHz Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Kind of interface: serial Case: TSSOP8 Access time: 140ns Operating voltage: 1.8...5.5V Memory: 128kb EEPROM Memory organisation: 16kx8bit Clock frequency: 20MHz Kind of memory: EEPROM Type of integrated circuit: EEPROM memory Interface: SPI |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| CAT25128VI-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 128kbEEPROM; SPI; 16kx8bit; 1.8÷5.5V; 20MHz Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Kind of interface: serial Case: SOIC8 Access time: 140ns Operating voltage: 1.8...5.5V Memory: 128kb EEPROM Memory organisation: 16kx8bit Clock frequency: 20MHz Kind of memory: EEPROM Type of integrated circuit: EEPROM memory Interface: SPI |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| CAT25128VP2I-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 128kbEEPROM; SPI; 16kx8bit; 1.8÷5.5V; 20MHz Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Kind of interface: serial Case: TDFN8 Access time: 140ns Operating voltage: 1.8...5.5V Memory: 128kb EEPROM Memory organisation: 16kx8bit Clock frequency: 20MHz Kind of memory: EEPROM Type of integrated circuit: EEPROM memory Interface: SPI |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| CAT25128XI-T2 | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 128kbEEPROM; SPI; 16kx8bit; 1.8÷5.5V; 20MHz Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Kind of interface: serial Case: SOIC8 Access time: 140ns Operating voltage: 1.8...5.5V Memory: 128kb EEPROM Memory organisation: 16kx8bit Clock frequency: 20MHz Kind of memory: EEPROM Type of integrated circuit: EEPROM memory Interface: SPI |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| CAV25128VE-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 128kbEEPROM; SPI; 16kx8bit; 2.5÷5.5V; 10MHz Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Kind of interface: serial Case: SOIC8 Access time: 40ns Operating voltage: 2.5...5.5V Memory: 128kb EEPROM Memory organisation: 16kx8bit Clock frequency: 10MHz Kind of memory: EEPROM Type of integrated circuit: EEPROM memory Interface: SPI |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| CAV25128YE-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 128kbEEPROM; SPI; 16kx8bit; 2.5÷5.5V; 10MHz Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Kind of interface: serial Case: TSSOP8 Access time: 40ns Operating voltage: 2.5...5.5V Memory: 128kb EEPROM Memory organisation: 16kx8bit Clock frequency: 10MHz Kind of memory: EEPROM Type of integrated circuit: EEPROM memory Interface: SPI |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
 |
MMSZ5223BT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 2.7V; SMD; reel,tape; SOD123; single diode Case: SOD123 Mounting: SMD Kind of package: reel; tape Semiconductor structure: single diode Type of diode: Zener Tolerance: ±5% Power dissipation: 0.5W Zener voltage: 2.7V Manufacturer series: MMSZ52xxB |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| SZMMSZ5223BT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 2.7V; SMD; reel,tape; SOD123; single diode Case: SOD123 Mounting: SMD Kind of package: reel; tape Semiconductor structure: single diode Type of diode: Zener Tolerance: ±5% Power dissipation: 0.5W Zener voltage: 2.7V Manufacturer series: MMSZ52xxB Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| NTMFS6H852NLT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 42A; Idm: 208A; 27W; DFN5 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 42A Pulsed drain current: 208A Power dissipation: 27W Case: DFN5 Gate-source voltage: ±20V On-state resistance: 13.1mΩ Mounting: SMD Gate charge: 17nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| NVMFS6H852NLT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 42A; Idm: 208A; 27W; DFN5 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 42A Pulsed drain current: 208A Power dissipation: 27W Case: DFN5 Gate-source voltage: ±20V On-state resistance: 13.1mΩ Mounting: SMD Gate charge: 17nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| NVMFS6H852NLWFT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 42A; Idm: 208A; 27W; DFNW5 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 42A Pulsed drain current: 208A Power dissipation: 27W Case: DFNW5 Gate-source voltage: ±20V On-state resistance: 13.1mΩ Mounting: SMD Gate charge: 17nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| UJ4SC075018B7S | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-JFET / N-MOSFET; SiC; unipolar; cascode; 750V; 52A Type of transistor: N-JFET / N-MOSFET Technology: SiC Polarisation: unipolar Kind of transistor: cascode Drain-source voltage: 750V Drain current: 52A Pulsed drain current: 208A Power dissipation: 259W Case: TO263-7 Gate-source voltage: -25...25V On-state resistance: 37mΩ Mounting: SMD Gate charge: 37.8nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| UJ4SC075018L8S | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-JFET / N-MOSFET; SiC; unipolar; cascode; 750V; 53A Type of transistor: N-JFET / N-MOSFET Technology: SiC Polarisation: unipolar Kind of transistor: cascode Drain-source voltage: 750V Drain current: 53A Pulsed drain current: 208A Power dissipation: 349W Case: H-PDSO-F8 Gate-source voltage: -25...25V On-state resistance: 37mΩ Mounting: SMD Gate charge: 37.8nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
 |
1N4936 | ONSEMI |
Category: THT universal diodes Description: Diode: rectifying; THT; 400V; 1A; Ifsm: 30A; CASE59-10,DO41; 200ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.4kV Load current: 1A Semiconductor structure: single diode Max. forward impulse current: 30A Case: CASE59-10; DO41 Max. forward voltage: 1.2V Reverse recovery time: 200ns Features of semiconductor devices: fast switching |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| BC638TA | ONSEMI |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 60V; 1A; 0.8W; TO92 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 1A Power dissipation: 0.8W Case: TO92 Mounting: THT Kind of package: Ammo Pack Frequency: 50MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| UJ3D1725K2 | ONSEMI |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.7kV; 25A; TO247-2; 69.8W Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.7kV Load current: 25A Semiconductor structure: single diode Case: TO247-2 Max. forward voltage: 1700V Max. forward impulse current: 163A Power dissipation: 69.8W Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
 |
MMBF5457 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-JFET; unipolar; 3mA; 0.35W; SOT23; Igt: 10mA Type of transistor: N-JFET Polarisation: unipolar Drain current: 3mA Power dissipation: 0.35W Case: SOT23 Gate-source voltage: -25V Mounting: SMD Kind of package: reel; tape Gate current: 10mA |
на замовлення 1988 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
| MMSZ5226CT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 3.3V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 3.3V Mounting: SMD Tolerance: ±2% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode Manufacturer series: MMSZ52xxC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| MC33152VDR2G | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; SOIC8; 1.5A; Ch: 2; MOSFET Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: SOIC8 Output current: 1.5A Number of channels: 2 Integrated circuit features: MOSFET Mounting: SMD Operating temperature: -40...85°C Supply voltage: 6.1...18V |
на замовлення 2500 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||||
| NTP095N65S3H | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 84A; 208W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 30A Pulsed drain current: 84A Power dissipation: 208W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 95mΩ Mounting: THT Gate charge: 58nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| NTP095N65S3HF | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 36A; Idm: 90A; 272W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 36A Pulsed drain current: 90A Power dissipation: 272W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 95mΩ Mounting: THT Gate charge: 66nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| NVB095N65S3F | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 36A; Idm: 90A; 272W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 36A Pulsed drain current: 90A Power dissipation: 272W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 95mΩ Mounting: SMD Gate charge: 66nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| NTHL095N65S3H | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 84A; 208W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 30A Pulsed drain current: 84A Power dissipation: 208W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 95mΩ Mounting: THT Gate charge: 58nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| NTHL095N65S3HF | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 22.8A; Idm: 90A; 272W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 22.8A Pulsed drain current: 90A Power dissipation: 272W Case: TO247 Gate-source voltage: ±30V On-state resistance: 78mΩ Mounting: THT Gate charge: 66nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| NTMT095N65S3H | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 84A; 208W; TDFN4 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 30A Pulsed drain current: 84A Power dissipation: 208W Case: TDFN4 Gate-source voltage: ±30V On-state resistance: 95mΩ Mounting: SMD Gate charge: 58nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| NTPF095N65S3H | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 84A; 40W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 30A Pulsed drain current: 84A Power dissipation: 40W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 95mΩ Mounting: THT Gate charge: 58nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
 |
FQD13N10TM | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 6.3A; 40W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 6.3A Power dissipation: 40W Case: DPAK Gate-source voltage: ±25V On-state resistance: 0.18Ω Mounting: SMD Gate charge: 16nC Kind of package: reel; tape Kind of channel: enhancement Technology: QFET® |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
 |
FOD3182 | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 1; OUT: MOSFET; 5kV; DIP8; 50kV/μs Kind of output: MOSFET Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Insulation voltage: 5kV Case: DIP8 Slew rate: 50kV/μs |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| FOD3180 | ONSEMI |
Category: Optocouplers - others Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; DIP8; 15kV/μs Kind of output: transistor Type of optocoupler: optocoupler Mounting: THT Output voltage: 0...25V Turn-off time: 55ns Turn-on time: 75ns Number of channels: 1 Max. off-state voltage: 5V Insulation voltage: 5kV Case: DIP8 Slew rate: 15kV/μs |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| FOD3180TV | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 2; OUT: MOSFET; Uinsul: 5kV; PDIP8; 15kV/μs Manufacturer series: FOD3180 Kind of output: MOSFET Type of optocoupler: optocoupler Mounting: THT Number of channels: 2 Max. off-state voltage: 5V Insulation voltage: 5kV Case: PDIP8 Slew rate: 15kV/μs |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| FOD3182SDV | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 2; OUT: MOSFET; Uinsul: 5kV; PDIP8; 50kV/μs Manufacturer series: FOD3182 Kind of output: MOSFET Type of optocoupler: optocoupler Mounting: SMD Number of channels: 2 Max. off-state voltage: 5V Insulation voltage: 5kV Case: PDIP8 Slew rate: 50kV/μs |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
 |
1N4004 | ONSEMI |
Category: THT universal diodes Description: Diode: rectifying; THT; 400V; 1A; Ifsm: 30A; DO41; Ufmax: 1.1V; 3W Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.4kV Load current: 1A Semiconductor structure: single diode Max. forward impulse current: 30A Case: DO41 Max. forward voltage: 1.1V Capacitance: 15pF Power dissipation: 3W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
 |
MM3Z4V7T1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 4.7V; SMD; reel,tape; SOD323; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 4.7V Kind of package: reel; tape Case: SOD323 Mounting: SMD Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: MM3ZxxT1G |
на замовлення 88 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
 |
BSR58 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-JFET; unipolar; 8mA; 0.25W; SOT23; Igt: 50mA Mounting: SMD Kind of package: reel; tape On-state resistance: 60Ω Type of transistor: N-JFET Case: SOT23 Polarisation: unipolar Gate-source voltage: -40V Drain current: 8mA Gate current: 50mA Power dissipation: 0.25W |
на замовлення 904 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
| CS51414EDR8G | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: PMIC; DC/DC converter; SO8; SMD; reel,tape; automotive industry Mounting: SMD Kind of package: reel; tape Application: automotive industry Kind of integrated circuit: DC/DC converter Case: SO8 Type of integrated circuit: PMIC |
на замовлення 2500 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||||
| NCP160BFCS514T2G | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 5.14V; 250mA; WLCSP4; SMD Manufacturer series: NCP160 Mounting: SMD Operating temperature: -40...125°C Number of channels: 1 Input voltage: 1.9...5.5V Tolerance: ±2% Output voltage: 5.14V Case: WLCSP4 Kind of voltage regulator: fixed; LDO; linear Type of integrated circuit: voltage regulator Voltage drop: 0.105V Output current: 0.25A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| NCP160AFCS514T2G | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 5.14V; 250mA; WLCSP4; SMD Manufacturer series: NCP160 Mounting: SMD Operating temperature: -40...125°C Number of channels: 1 Input voltage: 1.9...5.5V Tolerance: ±2% Output voltage: 5.14V Case: WLCSP4 Kind of voltage regulator: fixed; LDO; linear Type of integrated circuit: voltage regulator Voltage drop: 0.105V Output current: 0.25A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| NCP161AFCS514T2G | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 5.14V; 450mA; WLCSP4; SMD Manufacturer series: NCP161 Mounting: SMD Operating temperature: -40...125°C Number of channels: 1 Input voltage: 1.9...5.5V Tolerance: ±2% Output voltage: 5.14V Case: WLCSP4 Kind of voltage regulator: fixed; LDO; linear Type of integrated circuit: voltage regulator Voltage drop: 0.185V Output current: 0.45A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| NCP161BFCS514T2G | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 5.14V; 450mA; WLCSP4; SMD Manufacturer series: NCP161 Mounting: SMD Operating temperature: -40...125°C Number of channels: 1 Input voltage: 1.9...5.5V Tolerance: ±2% Output voltage: 5.14V Case: WLCSP4 Kind of voltage regulator: fixed; LDO; linear Type of integrated circuit: voltage regulator Voltage drop: 0.185V Output current: 0.45A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| NCV1117DT50RKG | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 5V; 1A; DPAK; SMD; Ch: 1 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Output voltage: 5V Output current: 1A Case: DPAK Mounting: SMD Kind of package: reel; tape Number of channels: 1 Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| NXH240B120H3Q1P1G | ONSEMI |
Category: IGBT modules Description: Module: IGBT; SiC diode/transistor; Urmax: 1.2kV; Ic: 92A; PIM32 Electrical mounting: Press-Fit Application: for UPS; Inverter Type of semiconductor module: IGBT Case: PIM32 Mechanical mounting: screw Gate-emitter voltage: ±20V Collector current: 92A Pulsed collector current: 276A Max. off-state voltage: 1.2kV Technology: SiC Semiconductor structure: SiC diode/transistor |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
 |
FDD86252 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 27A; 89W; DPAK Case: DPAK Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar On-state resistance: 103mΩ Gate-source voltage: ±20V Drain current: 27A Power dissipation: 89W Drain-source voltage: 150V Technology: PowerTrench® |
на замовлення 2327 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
 |
FDS6673BZ | ONSEMI |
 Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -30V; -14.5A; 2.5W; SO8 Type of transistor: P-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: -30V Drain current: -14.5A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±25V On-state resistance: 12mΩ Mounting: SMD Gate charge: 65nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 2110 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
 |
FDMC8651 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 20A; 41W; PQFN8 Kind of package: reel; tape Kind of channel: enhancement Mounting: SMD Case: PQFN8 Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Gate charge: 27.2nC On-state resistance: 9.3mΩ Gate-source voltage: ±12V Drain current: 20A Drain-source voltage: 30V Power dissipation: 41W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| DTA123EET1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416 Mounting: SMD Kind of transistor: BRT Type of transistor: PNP Case: SC75; SOT416 Collector current: 0.1A Power dissipation: 0.3W Current gain: 8...15 Quantity in set/package: 3000pcs. Collector-emitter voltage: 50V Base resistor: 2.2kΩ Base-emitter resistor: 2.2kΩ Kind of package: reel; tape Polarisation: bipolar |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| DTA123EM3T5G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 2.2kΩ Mounting: SMD Kind of transistor: BRT Type of transistor: PNP Case: SOT723 Collector current: 0.1A Power dissipation: 0.6W Current gain: 8...15 Quantity in set/package: 8000pcs. Collector-emitter voltage: 50V Base resistor: 2.2kΩ Base-emitter resistor: 2.2kΩ Kind of package: reel; tape Polarisation: bipolar |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| DTA123JET1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416 Mounting: SMD Kind of transistor: BRT Type of transistor: PNP Case: SC75; SOT416 Collector current: 0.1A Power dissipation: 0.3W Current gain: 80...140 Quantity in set/package: 3000pcs. Collector-emitter voltage: 50V Base resistor: 2.2kΩ Base-emitter resistor: 47kΩ Kind of package: reel; tape Polarisation: bipolar |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
 |
MBRF30H100CTG | ONSEMI |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 100V; 15Ax2; TO220FP; Ufmax: 0.93V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 100V Load current: 15A x2 Semiconductor structure: common cathode; double Case: TO220FP Max. forward voltage: 0.93V Max. forward impulse current: 250A Kind of package: tube Max. load current: 30A |
на замовлення 90 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
| MBR30H100CTG | ONSEMI |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 100V; 15Ax2; TO220AB; Ufmax: 0.8V Semiconductor structure: common cathode; double Case: TO220AB Type of diode: Schottky rectifying Kind of package: tube Mounting: THT Max. forward voltage: 0.8V Load current: 15A x2 Max. load current: 30A Max. off-state voltage: 100V Max. forward impulse current: 250A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| MBR30H100MFST3G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DFN5x6; SMD; 100V; 30A; reel,tape Semiconductor structure: single diode Case: DFN5x6 Type of diode: Schottky rectifying Kind of package: reel; tape Mounting: SMD Max. forward voltage: 0.9V Load current: 30A Max. off-state voltage: 100V Max. forward impulse current: 0.3kA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| NRVB30H100MFST3G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DFN5; SMD; 100V; 30A; reel,tape Semiconductor structure: single diode Case: DFN5 Type of diode: Schottky rectifying Kind of package: reel; tape Mounting: SMD Max. forward voltage: 0.9V Load current: 30A Max. load current: 60A Max. off-state voltage: 100V Max. forward impulse current: 0.3kA Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| NRVB30H100MFST1G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DFN5; SMD; 100V; 30A; reel,tape Semiconductor structure: single diode Case: DFN5 Type of diode: Schottky rectifying Kind of package: reel; tape Mounting: SMD Max. forward voltage: 0.9V Load current: 30A Max. load current: 60A Max. off-state voltage: 100V Max. forward impulse current: 0.3kA Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
 |
SB540 | ONSEMI |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 40V; 5A; DO201; 5W; reel,tape Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 40V Load current: 5A Semiconductor structure: single diode Case: DO201 Max. forward impulse current: 150A Capacitance: 500pF Kind of package: reel; tape Power dissipation: 5W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| SZBZX84C10LT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 10V; SMD; reel,tape; SOT23; single diode; 0.2uA Type of diode: Zener Power dissipation: 0.3W Zener voltage: 10V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Leakage current: 0.2µA Manufacturer series: BZX84C Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. |
| NSVDTA114EET1G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC75; SOT416
Current gain: 35...60
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 10kΩ
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC75; SOT416
Current gain: 35...60
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 10kΩ
товару немає в наявності
В кошику
од. на суму грн.
| RS1B |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 1A; 150ns; SMA; Ufmax: 1.3V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 1A
Reverse recovery time: 150ns
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1.3V
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 1A; 150ns; SMA; Ufmax: 1.3V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 1A
Reverse recovery time: 150ns
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1.3V
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| RS1BFA |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 0.8A; 150ns; SOD123F; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.8A
Reverse recovery time: 150ns
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 1.3V
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 0.8A; 150ns; SOD123F; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.8A
Reverse recovery time: 150ns
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 1.3V
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| NRVHPRS1BFA |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 0.8A; 150ns; SOD123F; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.8A
Reverse recovery time: 150ns
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 0.8A; 150ns; SOD123F; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.8A
Reverse recovery time: 150ns
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Kind of package: reel; tape
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| NCP1616A1DR2G |
|
Виробник: ONSEMI
Category: Integrated circuits - others
Description: IC: PMIC; PFC controller; SO10; -40÷125°C; reel,tape; 9÷28VDC
Type of integrated circuit: PMIC
Kind of integrated circuit: PFC controller
Mounting: SMD
Case: SO10
Operating temperature: -40...125°C
Kind of package: reel; tape
Output current: -500...800mA
Topology: boost
Operating voltage: 9...28V DC
Category: Integrated circuits - others
Description: IC: PMIC; PFC controller; SO10; -40÷125°C; reel,tape; 9÷28VDC
Type of integrated circuit: PMIC
Kind of integrated circuit: PFC controller
Mounting: SMD
Case: SO10
Operating temperature: -40...125°C
Kind of package: reel; tape
Output current: -500...800mA
Topology: boost
Operating voltage: 9...28V DC
товару немає в наявності
В кошику
од. на суму грн.
| NVMTS0D7N06CLTXG |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 477A; Idm: 900A; 147.3W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 477A
Pulsed drain current: 900A
Power dissipation: 147.3W
Case: DFNW8
Gate-source voltage: ±20V
On-state resistance: 0.68mΩ
Mounting: SMD
Gate charge: 225nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 477A; Idm: 900A; 147.3W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 477A
Pulsed drain current: 900A
Power dissipation: 147.3W
Case: DFNW8
Gate-source voltage: ±20V
On-state resistance: 0.68mΩ
Mounting: SMD
Gate charge: 225nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| CAT25128YI-GT3 |
|
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 128kbEEPROM; SPI; 16kx8bit; 1.8÷5.5V; 20MHz
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of interface: serial
Case: TSSOP8
Access time: 140ns
Operating voltage: 1.8...5.5V
Memory: 128kb EEPROM
Memory organisation: 16kx8bit
Clock frequency: 20MHz
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Interface: SPI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 128kbEEPROM; SPI; 16kx8bit; 1.8÷5.5V; 20MHz
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of interface: serial
Case: TSSOP8
Access time: 140ns
Operating voltage: 1.8...5.5V
Memory: 128kb EEPROM
Memory organisation: 16kx8bit
Clock frequency: 20MHz
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Interface: SPI
товару немає в наявності
В кошику
од. на суму грн.
| CAT25128VI-GT3 |
|
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 128kbEEPROM; SPI; 16kx8bit; 1.8÷5.5V; 20MHz
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of interface: serial
Case: SOIC8
Access time: 140ns
Operating voltage: 1.8...5.5V
Memory: 128kb EEPROM
Memory organisation: 16kx8bit
Clock frequency: 20MHz
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Interface: SPI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 128kbEEPROM; SPI; 16kx8bit; 1.8÷5.5V; 20MHz
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of interface: serial
Case: SOIC8
Access time: 140ns
Operating voltage: 1.8...5.5V
Memory: 128kb EEPROM
Memory organisation: 16kx8bit
Clock frequency: 20MHz
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Interface: SPI
товару немає в наявності
В кошику
од. на суму грн.
| CAT25128VP2I-GT3 |
|
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 128kbEEPROM; SPI; 16kx8bit; 1.8÷5.5V; 20MHz
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of interface: serial
Case: TDFN8
Access time: 140ns
Operating voltage: 1.8...5.5V
Memory: 128kb EEPROM
Memory organisation: 16kx8bit
Clock frequency: 20MHz
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Interface: SPI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 128kbEEPROM; SPI; 16kx8bit; 1.8÷5.5V; 20MHz
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of interface: serial
Case: TDFN8
Access time: 140ns
Operating voltage: 1.8...5.5V
Memory: 128kb EEPROM
Memory organisation: 16kx8bit
Clock frequency: 20MHz
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Interface: SPI
товару немає в наявності
В кошику
од. на суму грн.
| CAT25128XI-T2 |
|
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 128kbEEPROM; SPI; 16kx8bit; 1.8÷5.5V; 20MHz
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of interface: serial
Case: SOIC8
Access time: 140ns
Operating voltage: 1.8...5.5V
Memory: 128kb EEPROM
Memory organisation: 16kx8bit
Clock frequency: 20MHz
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Interface: SPI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 128kbEEPROM; SPI; 16kx8bit; 1.8÷5.5V; 20MHz
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of interface: serial
Case: SOIC8
Access time: 140ns
Operating voltage: 1.8...5.5V
Memory: 128kb EEPROM
Memory organisation: 16kx8bit
Clock frequency: 20MHz
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Interface: SPI
товару немає в наявності
В кошику
од. на суму грн.
| CAV25128VE-GT3 |
|
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 128kbEEPROM; SPI; 16kx8bit; 2.5÷5.5V; 10MHz
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of interface: serial
Case: SOIC8
Access time: 40ns
Operating voltage: 2.5...5.5V
Memory: 128kb EEPROM
Memory organisation: 16kx8bit
Clock frequency: 10MHz
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Interface: SPI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 128kbEEPROM; SPI; 16kx8bit; 2.5÷5.5V; 10MHz
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of interface: serial
Case: SOIC8
Access time: 40ns
Operating voltage: 2.5...5.5V
Memory: 128kb EEPROM
Memory organisation: 16kx8bit
Clock frequency: 10MHz
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Interface: SPI
товару немає в наявності
В кошику
од. на суму грн.
| CAV25128YE-GT3 |
|
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 128kbEEPROM; SPI; 16kx8bit; 2.5÷5.5V; 10MHz
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of interface: serial
Case: TSSOP8
Access time: 40ns
Operating voltage: 2.5...5.5V
Memory: 128kb EEPROM
Memory organisation: 16kx8bit
Clock frequency: 10MHz
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Interface: SPI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 128kbEEPROM; SPI; 16kx8bit; 2.5÷5.5V; 10MHz
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of interface: serial
Case: TSSOP8
Access time: 40ns
Operating voltage: 2.5...5.5V
Memory: 128kb EEPROM
Memory organisation: 16kx8bit
Clock frequency: 10MHz
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Interface: SPI
товару немає в наявності
В кошику
од. на суму грн.
| MMSZ5223BT1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 2.7V; SMD; reel,tape; SOD123; single diode
Case: SOD123
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Zener
Tolerance: ±5%
Power dissipation: 0.5W
Zener voltage: 2.7V
Manufacturer series: MMSZ52xxB
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 2.7V; SMD; reel,tape; SOD123; single diode
Case: SOD123
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Zener
Tolerance: ±5%
Power dissipation: 0.5W
Zener voltage: 2.7V
Manufacturer series: MMSZ52xxB
товару немає в наявності
В кошику
од. на суму грн.
| SZMMSZ5223BT1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 2.7V; SMD; reel,tape; SOD123; single diode
Case: SOD123
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Zener
Tolerance: ±5%
Power dissipation: 0.5W
Zener voltage: 2.7V
Manufacturer series: MMSZ52xxB
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 2.7V; SMD; reel,tape; SOD123; single diode
Case: SOD123
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Zener
Tolerance: ±5%
Power dissipation: 0.5W
Zener voltage: 2.7V
Manufacturer series: MMSZ52xxB
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| NTMFS6H852NLT1G |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 42A; Idm: 208A; 27W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 42A
Pulsed drain current: 208A
Power dissipation: 27W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 13.1mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 42A; Idm: 208A; 27W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 42A
Pulsed drain current: 208A
Power dissipation: 27W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 13.1mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| NVMFS6H852NLT1G |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 42A; Idm: 208A; 27W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 42A
Pulsed drain current: 208A
Power dissipation: 27W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 13.1mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 42A; Idm: 208A; 27W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 42A
Pulsed drain current: 208A
Power dissipation: 27W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 13.1mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| NVMFS6H852NLWFT1G |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 42A; Idm: 208A; 27W; DFNW5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 42A
Pulsed drain current: 208A
Power dissipation: 27W
Case: DFNW5
Gate-source voltage: ±20V
On-state resistance: 13.1mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 42A; Idm: 208A; 27W; DFNW5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 42A
Pulsed drain current: 208A
Power dissipation: 27W
Case: DFNW5
Gate-source voltage: ±20V
On-state resistance: 13.1mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| UJ4SC075018B7S |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET / N-MOSFET; SiC; unipolar; cascode; 750V; 52A
Type of transistor: N-JFET / N-MOSFET
Technology: SiC
Polarisation: unipolar
Kind of transistor: cascode
Drain-source voltage: 750V
Drain current: 52A
Pulsed drain current: 208A
Power dissipation: 259W
Case: TO263-7
Gate-source voltage: -25...25V
On-state resistance: 37mΩ
Mounting: SMD
Gate charge: 37.8nC
Kind of package: tube
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-JFET / N-MOSFET; SiC; unipolar; cascode; 750V; 52A
Type of transistor: N-JFET / N-MOSFET
Technology: SiC
Polarisation: unipolar
Kind of transistor: cascode
Drain-source voltage: 750V
Drain current: 52A
Pulsed drain current: 208A
Power dissipation: 259W
Case: TO263-7
Gate-source voltage: -25...25V
On-state resistance: 37mΩ
Mounting: SMD
Gate charge: 37.8nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| UJ4SC075018L8S |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET / N-MOSFET; SiC; unipolar; cascode; 750V; 53A
Type of transistor: N-JFET / N-MOSFET
Technology: SiC
Polarisation: unipolar
Kind of transistor: cascode
Drain-source voltage: 750V
Drain current: 53A
Pulsed drain current: 208A
Power dissipation: 349W
Case: H-PDSO-F8
Gate-source voltage: -25...25V
On-state resistance: 37mΩ
Mounting: SMD
Gate charge: 37.8nC
Kind of package: tube
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-JFET / N-MOSFET; SiC; unipolar; cascode; 750V; 53A
Type of transistor: N-JFET / N-MOSFET
Technology: SiC
Polarisation: unipolar
Kind of transistor: cascode
Drain-source voltage: 750V
Drain current: 53A
Pulsed drain current: 208A
Power dissipation: 349W
Case: H-PDSO-F8
Gate-source voltage: -25...25V
On-state resistance: 37mΩ
Mounting: SMD
Gate charge: 37.8nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| 1N4936 |
|
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 1A; Ifsm: 30A; CASE59-10,DO41; 200ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Case: CASE59-10; DO41
Max. forward voltage: 1.2V
Reverse recovery time: 200ns
Features of semiconductor devices: fast switching
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 1A; Ifsm: 30A; CASE59-10,DO41; 200ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Case: CASE59-10; DO41
Max. forward voltage: 1.2V
Reverse recovery time: 200ns
Features of semiconductor devices: fast switching
товару немає в наявності
В кошику
од. на суму грн.
| BC638TA |
|
Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 1A; 0.8W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 0.8W
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Frequency: 50MHz
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 1A; 0.8W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 0.8W
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Frequency: 50MHz
товару немає в наявності
В кошику
од. на суму грн.
| UJ3D1725K2 |
|
Виробник: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.7kV; 25A; TO247-2; 69.8W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.7kV
Load current: 25A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1700V
Max. forward impulse current: 163A
Power dissipation: 69.8W
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.7kV; 25A; TO247-2; 69.8W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.7kV
Load current: 25A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1700V
Max. forward impulse current: 163A
Power dissipation: 69.8W
Kind of package: tube
товару немає в наявності
В кошику
од. на суму грн.
| MMBF5457 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 3mA; 0.35W; SOT23; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain current: 3mA
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: -25V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 3mA; 0.35W; SOT23; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain current: 3mA
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: -25V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
на замовлення 1988 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 28+ | 15.68 грн |
| 33+ | 12.53 грн |
| 100+ | 11.56 грн |
| 250+ | 11.00 грн |
| 500+ | 9.95 грн |
| 1000+ | 9.54 грн |
| MMSZ5226CT1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.3V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxC
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.3V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxC
товару немає в наявності
В кошику
од. на суму грн.
| MC33152VDR2G |
|
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SOIC8; 1.5A; Ch: 2; MOSFET
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SOIC8
Output current: 1.5A
Number of channels: 2
Integrated circuit features: MOSFET
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 6.1...18V
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SOIC8; 1.5A; Ch: 2; MOSFET
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SOIC8
Output current: 1.5A
Number of channels: 2
Integrated circuit features: MOSFET
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 6.1...18V
на замовлення 2500 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 67.06 грн |
| NTP095N65S3H |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 84A; 208W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Pulsed drain current: 84A
Power dissipation: 208W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 95mΩ
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 84A; 208W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Pulsed drain current: 84A
Power dissipation: 208W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 95mΩ
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| NTP095N65S3HF |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 36A; Idm: 90A; 272W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 36A
Pulsed drain current: 90A
Power dissipation: 272W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 95mΩ
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 36A; Idm: 90A; 272W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 36A
Pulsed drain current: 90A
Power dissipation: 272W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 95mΩ
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| NVB095N65S3F |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 36A; Idm: 90A; 272W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 36A
Pulsed drain current: 90A
Power dissipation: 272W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 95mΩ
Mounting: SMD
Gate charge: 66nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 36A; Idm: 90A; 272W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 36A
Pulsed drain current: 90A
Power dissipation: 272W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 95mΩ
Mounting: SMD
Gate charge: 66nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| NTHL095N65S3H |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 84A; 208W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Pulsed drain current: 84A
Power dissipation: 208W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 95mΩ
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 84A; 208W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Pulsed drain current: 84A
Power dissipation: 208W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 95mΩ
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| NTHL095N65S3HF |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 22.8A; Idm: 90A; 272W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 22.8A
Pulsed drain current: 90A
Power dissipation: 272W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 78mΩ
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 22.8A; Idm: 90A; 272W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 22.8A
Pulsed drain current: 90A
Power dissipation: 272W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 78mΩ
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| NTMT095N65S3H |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 84A; 208W; TDFN4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Pulsed drain current: 84A
Power dissipation: 208W
Case: TDFN4
Gate-source voltage: ±30V
On-state resistance: 95mΩ
Mounting: SMD
Gate charge: 58nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 84A; 208W; TDFN4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Pulsed drain current: 84A
Power dissipation: 208W
Case: TDFN4
Gate-source voltage: ±30V
On-state resistance: 95mΩ
Mounting: SMD
Gate charge: 58nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| NTPF095N65S3H |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 84A; 40W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Pulsed drain current: 84A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 95mΩ
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 84A; 40W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Pulsed drain current: 84A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 95mΩ
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| FQD13N10TM |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 6.3A; 40W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 6.3A
Power dissipation: 40W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: QFET®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 6.3A; 40W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 6.3A
Power dissipation: 40W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: QFET®
товару немає в наявності
В кошику
од. на суму грн.
| FOD3182 |
|
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: MOSFET; 5kV; DIP8; 50kV/μs
Kind of output: MOSFET
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Insulation voltage: 5kV
Case: DIP8
Slew rate: 50kV/μs
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: MOSFET; 5kV; DIP8; 50kV/μs
Kind of output: MOSFET
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Insulation voltage: 5kV
Case: DIP8
Slew rate: 50kV/μs
товару немає в наявності
В кошику
од. на суму грн.
| FOD3180 |
|
Виробник: ONSEMI
Category: Optocouplers - others
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; DIP8; 15kV/μs
Kind of output: transistor
Type of optocoupler: optocoupler
Mounting: THT
Output voltage: 0...25V
Turn-off time: 55ns
Turn-on time: 75ns
Number of channels: 1
Max. off-state voltage: 5V
Insulation voltage: 5kV
Case: DIP8
Slew rate: 15kV/μs
Category: Optocouplers - others
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; DIP8; 15kV/μs
Kind of output: transistor
Type of optocoupler: optocoupler
Mounting: THT
Output voltage: 0...25V
Turn-off time: 55ns
Turn-on time: 75ns
Number of channels: 1
Max. off-state voltage: 5V
Insulation voltage: 5kV
Case: DIP8
Slew rate: 15kV/μs
товару немає в наявності
В кошику
од. на суму грн.
| FOD3180TV |
|
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 2; OUT: MOSFET; Uinsul: 5kV; PDIP8; 15kV/μs
Manufacturer series: FOD3180
Kind of output: MOSFET
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 2
Max. off-state voltage: 5V
Insulation voltage: 5kV
Case: PDIP8
Slew rate: 15kV/μs
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 2; OUT: MOSFET; Uinsul: 5kV; PDIP8; 15kV/μs
Manufacturer series: FOD3180
Kind of output: MOSFET
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 2
Max. off-state voltage: 5V
Insulation voltage: 5kV
Case: PDIP8
Slew rate: 15kV/μs
товару немає в наявності
В кошику
од. на суму грн.
| FOD3182SDV |
|
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: MOSFET; Uinsul: 5kV; PDIP8; 50kV/μs
Manufacturer series: FOD3182
Kind of output: MOSFET
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Max. off-state voltage: 5V
Insulation voltage: 5kV
Case: PDIP8
Slew rate: 50kV/μs
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: MOSFET; Uinsul: 5kV; PDIP8; 50kV/μs
Manufacturer series: FOD3182
Kind of output: MOSFET
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Max. off-state voltage: 5V
Insulation voltage: 5kV
Case: PDIP8
Slew rate: 50kV/μs
товару немає в наявності
В кошику
од. на суму грн.
| 1N4004 |
|
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 1A; Ifsm: 30A; DO41; Ufmax: 1.1V; 3W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.1V
Capacitance: 15pF
Power dissipation: 3W
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 1A; Ifsm: 30A; DO41; Ufmax: 1.1V; 3W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.1V
Capacitance: 15pF
Power dissipation: 3W
товару немає в наявності
В кошику
од. на суму грн.
| MM3Z4V7T1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 4.7V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 4.7V
Kind of package: reel; tape
Case: SOD323
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: MM3ZxxT1G
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 4.7V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 4.7V
Kind of package: reel; tape
Case: SOD323
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: MM3ZxxT1G
на замовлення 88 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 72+ | 6.10 грн |
| 88+ | 4.85 грн |
| BSR58 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 8mA; 0.25W; SOT23; Igt: 50mA
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 60Ω
Type of transistor: N-JFET
Case: SOT23
Polarisation: unipolar
Gate-source voltage: -40V
Drain current: 8mA
Gate current: 50mA
Power dissipation: 0.25W
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 8mA; 0.25W; SOT23; Igt: 50mA
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 60Ω
Type of transistor: N-JFET
Case: SOT23
Polarisation: unipolar
Gate-source voltage: -40V
Drain current: 8mA
Gate current: 50mA
Power dissipation: 0.25W
на замовлення 904 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 28.74 грн |
| 20+ | 20.70 грн |
| 50+ | 12.29 грн |
| 100+ | 10.59 грн |
| 500+ | 7.60 грн |
| CS51414EDR8G |
|
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; SO8; SMD; reel,tape; automotive industry
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Kind of integrated circuit: DC/DC converter
Case: SO8
Type of integrated circuit: PMIC
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; SO8; SMD; reel,tape; automotive industry
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Kind of integrated circuit: DC/DC converter
Case: SO8
Type of integrated circuit: PMIC
на замовлення 2500 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 154.15 грн |
| 10+ | 105.94 грн |
| 25+ | 97.04 грн |
| 50+ | 96.23 грн |
| NCP160BFCS514T2G |
|
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5.14V; 250mA; WLCSP4; SMD
Manufacturer series: NCP160
Mounting: SMD
Operating temperature: -40...125°C
Number of channels: 1
Input voltage: 1.9...5.5V
Tolerance: ±2%
Output voltage: 5.14V
Case: WLCSP4
Kind of voltage regulator: fixed; LDO; linear
Type of integrated circuit: voltage regulator
Voltage drop: 0.105V
Output current: 0.25A
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5.14V; 250mA; WLCSP4; SMD
Manufacturer series: NCP160
Mounting: SMD
Operating temperature: -40...125°C
Number of channels: 1
Input voltage: 1.9...5.5V
Tolerance: ±2%
Output voltage: 5.14V
Case: WLCSP4
Kind of voltage regulator: fixed; LDO; linear
Type of integrated circuit: voltage regulator
Voltage drop: 0.105V
Output current: 0.25A
товару немає в наявності
В кошику
од. на суму грн.
| NCP160AFCS514T2G |
|
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5.14V; 250mA; WLCSP4; SMD
Manufacturer series: NCP160
Mounting: SMD
Operating temperature: -40...125°C
Number of channels: 1
Input voltage: 1.9...5.5V
Tolerance: ±2%
Output voltage: 5.14V
Case: WLCSP4
Kind of voltage regulator: fixed; LDO; linear
Type of integrated circuit: voltage regulator
Voltage drop: 0.105V
Output current: 0.25A
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5.14V; 250mA; WLCSP4; SMD
Manufacturer series: NCP160
Mounting: SMD
Operating temperature: -40...125°C
Number of channels: 1
Input voltage: 1.9...5.5V
Tolerance: ±2%
Output voltage: 5.14V
Case: WLCSP4
Kind of voltage regulator: fixed; LDO; linear
Type of integrated circuit: voltage regulator
Voltage drop: 0.105V
Output current: 0.25A
товару немає в наявності
В кошику
од. на суму грн.
| NCP161AFCS514T2G |
|
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5.14V; 450mA; WLCSP4; SMD
Manufacturer series: NCP161
Mounting: SMD
Operating temperature: -40...125°C
Number of channels: 1
Input voltage: 1.9...5.5V
Tolerance: ±2%
Output voltage: 5.14V
Case: WLCSP4
Kind of voltage regulator: fixed; LDO; linear
Type of integrated circuit: voltage regulator
Voltage drop: 0.185V
Output current: 0.45A
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5.14V; 450mA; WLCSP4; SMD
Manufacturer series: NCP161
Mounting: SMD
Operating temperature: -40...125°C
Number of channels: 1
Input voltage: 1.9...5.5V
Tolerance: ±2%
Output voltage: 5.14V
Case: WLCSP4
Kind of voltage regulator: fixed; LDO; linear
Type of integrated circuit: voltage regulator
Voltage drop: 0.185V
Output current: 0.45A
товару немає в наявності
В кошику
од. на суму грн.
| NCP161BFCS514T2G |
|
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5.14V; 450mA; WLCSP4; SMD
Manufacturer series: NCP161
Mounting: SMD
Operating temperature: -40...125°C
Number of channels: 1
Input voltage: 1.9...5.5V
Tolerance: ±2%
Output voltage: 5.14V
Case: WLCSP4
Kind of voltage regulator: fixed; LDO; linear
Type of integrated circuit: voltage regulator
Voltage drop: 0.185V
Output current: 0.45A
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5.14V; 450mA; WLCSP4; SMD
Manufacturer series: NCP161
Mounting: SMD
Operating temperature: -40...125°C
Number of channels: 1
Input voltage: 1.9...5.5V
Tolerance: ±2%
Output voltage: 5.14V
Case: WLCSP4
Kind of voltage regulator: fixed; LDO; linear
Type of integrated circuit: voltage regulator
Voltage drop: 0.185V
Output current: 0.45A
товару немає в наявності
В кошику
од. на суму грн.
| NCV1117DT50RKG |
|
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 1A; DPAK; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 5V
Output current: 1A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 1A; DPAK; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 5V
Output current: 1A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| NXH240B120H3Q1P1G |
|
Виробник: ONSEMI
Category: IGBT modules
Description: Module: IGBT; SiC diode/transistor; Urmax: 1.2kV; Ic: 92A; PIM32
Electrical mounting: Press-Fit
Application: for UPS; Inverter
Type of semiconductor module: IGBT
Case: PIM32
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 92A
Pulsed collector current: 276A
Max. off-state voltage: 1.2kV
Technology: SiC
Semiconductor structure: SiC diode/transistor
Category: IGBT modules
Description: Module: IGBT; SiC diode/transistor; Urmax: 1.2kV; Ic: 92A; PIM32
Electrical mounting: Press-Fit
Application: for UPS; Inverter
Type of semiconductor module: IGBT
Case: PIM32
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 92A
Pulsed collector current: 276A
Max. off-state voltage: 1.2kV
Technology: SiC
Semiconductor structure: SiC diode/transistor
товару немає в наявності
В кошику
од. на суму грн.
| FDD86252 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 27A; 89W; DPAK
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 103mΩ
Gate-source voltage: ±20V
Drain current: 27A
Power dissipation: 89W
Drain-source voltage: 150V
Technology: PowerTrench®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 27A; 89W; DPAK
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 103mΩ
Gate-source voltage: ±20V
Drain current: 27A
Power dissipation: 89W
Drain-source voltage: 150V
Technology: PowerTrench®
на замовлення 2327 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 73.15 грн |
| 10+ | 63.08 грн |
| 25+ | 60.65 грн |
| 100+ | 54.99 грн |
| 250+ | 52.56 грн |
| FDS6673BZ | |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -14.5A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -14.5A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±25V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 65nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -14.5A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -14.5A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±25V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 65nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 2110 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 76.64 грн |
| 10+ | 56.04 грн |
| 25+ | 50.14 грн |
| 100+ | 42.05 грн |
| 250+ | 37.44 грн |
| 500+ | 36.88 грн |
| FDMC8651 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 20A; 41W; PQFN8
Kind of package: reel; tape
Kind of channel: enhancement
Mounting: SMD
Case: PQFN8
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Gate charge: 27.2nC
On-state resistance: 9.3mΩ
Gate-source voltage: ±12V
Drain current: 20A
Drain-source voltage: 30V
Power dissipation: 41W
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 20A; 41W; PQFN8
Kind of package: reel; tape
Kind of channel: enhancement
Mounting: SMD
Case: PQFN8
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Gate charge: 27.2nC
On-state resistance: 9.3mΩ
Gate-source voltage: ±12V
Drain current: 20A
Drain-source voltage: 30V
Power dissipation: 41W
товару немає в наявності
В кошику
од. на суму грн.
| DTA123EET1G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416
Mounting: SMD
Kind of transistor: BRT
Type of transistor: PNP
Case: SC75; SOT416
Collector current: 0.1A
Power dissipation: 0.3W
Current gain: 8...15
Quantity in set/package: 3000pcs.
Collector-emitter voltage: 50V
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Kind of package: reel; tape
Polarisation: bipolar
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416
Mounting: SMD
Kind of transistor: BRT
Type of transistor: PNP
Case: SC75; SOT416
Collector current: 0.1A
Power dissipation: 0.3W
Current gain: 8...15
Quantity in set/package: 3000pcs.
Collector-emitter voltage: 50V
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Kind of package: reel; tape
Polarisation: bipolar
товару немає в наявності
В кошику
од. на суму грн.
| DTA123EM3T5G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 2.2kΩ
Mounting: SMD
Kind of transistor: BRT
Type of transistor: PNP
Case: SOT723
Collector current: 0.1A
Power dissipation: 0.6W
Current gain: 8...15
Quantity in set/package: 8000pcs.
Collector-emitter voltage: 50V
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Kind of package: reel; tape
Polarisation: bipolar
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 2.2kΩ
Mounting: SMD
Kind of transistor: BRT
Type of transistor: PNP
Case: SOT723
Collector current: 0.1A
Power dissipation: 0.6W
Current gain: 8...15
Quantity in set/package: 8000pcs.
Collector-emitter voltage: 50V
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Kind of package: reel; tape
Polarisation: bipolar
товару немає в наявності
В кошику
од. на суму грн.
| DTA123JET1G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416
Mounting: SMD
Kind of transistor: BRT
Type of transistor: PNP
Case: SC75; SOT416
Collector current: 0.1A
Power dissipation: 0.3W
Current gain: 80...140
Quantity in set/package: 3000pcs.
Collector-emitter voltage: 50V
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Kind of package: reel; tape
Polarisation: bipolar
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416
Mounting: SMD
Kind of transistor: BRT
Type of transistor: PNP
Case: SC75; SOT416
Collector current: 0.1A
Power dissipation: 0.3W
Current gain: 80...140
Quantity in set/package: 3000pcs.
Collector-emitter voltage: 50V
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Kind of package: reel; tape
Polarisation: bipolar
товару немає в наявності
В кошику
од. на суму грн.
| MBRF30H100CTG |
|
Виробник: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 15Ax2; TO220FP; Ufmax: 0.93V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO220FP
Max. forward voltage: 0.93V
Max. forward impulse current: 250A
Kind of package: tube
Max. load current: 30A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 15Ax2; TO220FP; Ufmax: 0.93V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO220FP
Max. forward voltage: 0.93V
Max. forward impulse current: 250A
Kind of package: tube
Max. load current: 30A
на замовлення 90 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 102.76 грн |
| 10+ | 84.10 грн |
| 50+ | 70.35 грн |
| MBR30H100CTG |
|
Виробник: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 15Ax2; TO220AB; Ufmax: 0.8V
Semiconductor structure: common cathode; double
Case: TO220AB
Type of diode: Schottky rectifying
Kind of package: tube
Mounting: THT
Max. forward voltage: 0.8V
Load current: 15A x2
Max. load current: 30A
Max. off-state voltage: 100V
Max. forward impulse current: 250A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 15Ax2; TO220AB; Ufmax: 0.8V
Semiconductor structure: common cathode; double
Case: TO220AB
Type of diode: Schottky rectifying
Kind of package: tube
Mounting: THT
Max. forward voltage: 0.8V
Load current: 15A x2
Max. load current: 30A
Max. off-state voltage: 100V
Max. forward impulse current: 250A
товару немає в наявності
В кошику
од. на суму грн.
| MBR30H100MFST3G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5x6; SMD; 100V; 30A; reel,tape
Semiconductor structure: single diode
Case: DFN5x6
Type of diode: Schottky rectifying
Kind of package: reel; tape
Mounting: SMD
Max. forward voltage: 0.9V
Load current: 30A
Max. off-state voltage: 100V
Max. forward impulse current: 0.3kA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5x6; SMD; 100V; 30A; reel,tape
Semiconductor structure: single diode
Case: DFN5x6
Type of diode: Schottky rectifying
Kind of package: reel; tape
Mounting: SMD
Max. forward voltage: 0.9V
Load current: 30A
Max. off-state voltage: 100V
Max. forward impulse current: 0.3kA
товару немає в наявності
В кошику
од. на суму грн.
| NRVB30H100MFST3G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 100V; 30A; reel,tape
Semiconductor structure: single diode
Case: DFN5
Type of diode: Schottky rectifying
Kind of package: reel; tape
Mounting: SMD
Max. forward voltage: 0.9V
Load current: 30A
Max. load current: 60A
Max. off-state voltage: 100V
Max. forward impulse current: 0.3kA
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 100V; 30A; reel,tape
Semiconductor structure: single diode
Case: DFN5
Type of diode: Schottky rectifying
Kind of package: reel; tape
Mounting: SMD
Max. forward voltage: 0.9V
Load current: 30A
Max. load current: 60A
Max. off-state voltage: 100V
Max. forward impulse current: 0.3kA
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| NRVB30H100MFST1G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 100V; 30A; reel,tape
Semiconductor structure: single diode
Case: DFN5
Type of diode: Schottky rectifying
Kind of package: reel; tape
Mounting: SMD
Max. forward voltage: 0.9V
Load current: 30A
Max. load current: 60A
Max. off-state voltage: 100V
Max. forward impulse current: 0.3kA
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 100V; 30A; reel,tape
Semiconductor structure: single diode
Case: DFN5
Type of diode: Schottky rectifying
Kind of package: reel; tape
Mounting: SMD
Max. forward voltage: 0.9V
Load current: 30A
Max. load current: 60A
Max. off-state voltage: 100V
Max. forward impulse current: 0.3kA
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| SB540 |
|
Виробник: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 5A; DO201; 5W; reel,tape
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 40V
Load current: 5A
Semiconductor structure: single diode
Case: DO201
Max. forward impulse current: 150A
Capacitance: 500pF
Kind of package: reel; tape
Power dissipation: 5W
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 5A; DO201; 5W; reel,tape
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 40V
Load current: 5A
Semiconductor structure: single diode
Case: DO201
Max. forward impulse current: 150A
Capacitance: 500pF
Kind of package: reel; tape
Power dissipation: 5W
товару немає в наявності
В кошику
од. на суму грн.
| SZBZX84C10LT1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 10V; SMD; reel,tape; SOT23; single diode; 0.2uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 0.2µA
Manufacturer series: BZX84C
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 10V; SMD; reel,tape; SOT23; single diode; 0.2uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 0.2µA
Manufacturer series: BZX84C
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.